Indication device

Abstract

The purpose of the present invention is to obtain an insulating film with high reliability, the insulating film and a wiring line being not susceptible to the occurrence of a crack due to thermal stress difference between the insulating film for wiring insulation or a protective film and inorganic materials, namely a metal wiring line, an inorganic light emitting diode chip and a substrate. In order to achieve the purpose, the present invention provides a display device which comprises at least a metal wiring line, a cured film, an inorganic insulating film and a plurality of light emitting elements, wherein: the cured film is obtained by curing a resin composition that contains a resin (A); each of the light emitting elements is an inorganic light emitting diode that is provided with a pair of electrode terminals on either surface; the pair of electrode terminals are connected to a plurality of the metal wiring lines that extend in the inorganic insulating film and the cured film; the display device is configured such that electrical insulation is maintained among the plurality of metal wiring lines by means of the cured film and the inorganic insulating film; the display device comprises a plurality of the cured films; and the inorganic insulating film is arranged so as to be in contact with at least a part of the interlayer between the plurality of cured films.

Description

[Technical Field]

[0001] This invention relates to a display device such as an LED display. [Background technology]

[0002] In recent years, LED displays have attracted attention as a new display technology following liquid crystal displays, plasma displays, and organic EL displays, as they are constructed by arranging light-emitting diodes (LEDs) in the same number as pixels. In particular, mini-LED displays, which use LEDs as light sources in size from the conventional 1 mm to 100-700 μm, and micro-LED displays, which use LEDs smaller than 100 μm, are attracting attention, and research and development are actively being conducted. The main features of mini-LED and micro-LED displays include high contrast, fast response time, low power consumption, and wide viewing angles. Therefore, they are expected to be widely used not only in conventional wearable displays such as televisions, smartphones, and smartwatches, but also in new and promising applications such as signage, augmented reality (AR), virtual reality (VR), and even transparent displays capable of displaying spatial images.

[0003] Various forms of LED display devices have been proposed for practical application and high performance. These include a form in which microLEDs are arranged on a multilayer flexible circuit board (see Patent Document 1), and a form in which a bank layer and trace lines are provided on a display substrate, and microLEDs and microdriver chips are arranged on top of them (see Patent Document 2). In addition, a form has been proposed in which a planarization film is formed on a growth substrate on which a light-emitting element body with electrode pads is integrally formed, the planarization film on the electrode pads is removed to expose the electrode pads, an outer electrode pad is formed on the planarization film that is connected to the electrode pads, and the outer electrode pad is positioned on a circuit board on which the circuit-side electrode portion is formed so as to face the circuit-side electrode portion, thereby electrically connecting the front external electrode pad and the circuit-side electrode portion (see Patent Document 3).

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0005] Since the LED display device requires a high temperature of 200°C or higher during the manufacturing process, cracks occur in the wiring and the insulating film due to the thermal stress difference between the organic insulating film and the protective film for wiring and the inorganic metal wiring, inorganic light-emitting diode chips, and the substrate, resulting in a problem of insufficient reliability.

Means for Solving the Problems

[0006] In order to solve the above problems, the present invention has the following configuration. A display device having at least a metal wiring, a cured film, an inorganic insulating film, and a plurality of light-emitting elements, wherein the cured film is a film obtained by curing a resin composition containing a resin, the light-emitting element is an inorganic light-emitting diode having a pair of electrode terminals on one of its surfaces, the pair of electrode terminals are connected to a plurality of the metal wirings extending in the cured film and the inorganic insulating film, and between the plurality of metal wirings, electrical insulation is maintained by the cured film and the inorganic insulating film, the cured film has a plurality of layers, and the inorganic insulating film is arranged so as to contact at least a part of the layers between the plurality of layers of the cured film.

Effects of the Invention

[0007] The display device of the present invention can provide a display device with high light extraction efficiency, sufficient brightness, and a low defect rate even after a reliability test, which is an accelerated test in actual use.

Brief Description of the Drawings

[0008] [Figure 1] It is a front cross-sectional view showing one aspect of the display device of the present invention. [Figure 2] It is a front enlarged cross-sectional view (upper part) of the designated area A and a bottom view (lower part) excluding the light-emitting element in the designated area A. [Figure 3] It is an upper enlarged cross-sectional view (upper part) of the designated area B, a cross-sectional view (middle part) excluding the wiring on the plane orthogonal to the front of the designated area B, and a bottom view (lower part) excluding the counter substrate in the designated area B. [Figure 4] It is a front cross-sectional view showing one aspect of the display device in a form provided with the reflection film of the present invention. [Figure 5] It is a front cross-sectional view showing one aspect of the display device in a form provided with the partition wall of the present invention. [Figure 6] It is a front cross-sectional view showing one aspect of the display device in a form provided with the partition wall in the cured film of the present invention. [Figure 7] It is a front cross-sectional view showing one aspect of the display device in a form provided with the reflection film and the partition wall of the present invention. [Figure 8] It is a front cross-sectional view showing one aspect of the display device in a form provided with the partition wall in the cured film and provided with the reflection film thereon. [Figure 9] It is a front cross-sectional view of one aspect of the display device having a configuration in which drive elements are arranged in the cured film of the present invention. [Figure 10] It is a front cross-sectional view of one aspect of the display device having another configuration in which drive elements are arranged in the cured film of the present invention. [Figure 11] It is a front cross-sectional view showing another aspect of the display device of the present invention. [Figure 12] It is a front cross-sectional view showing another aspect of the display device of the present invention. [Figure 13] It is a cross-sectional view of the manufacturing process of one aspect of the display device of the present invention. [Figure 14]This is a cross-sectional view of the manufacturing process of one embodiment of the present invention, which includes a partition wall. [Figure 15] This is a cross-sectional view of the manufacturing process of one embodiment of a display device provided with a reflective wall according to the present invention. [Figure 16] This is a cross-sectional view of the manufacturing process of another embodiment of the display device of the present invention. [Figure 17] This is a cross-sectional view of the manufacturing process of another embodiment of the display device of the present invention. [Figure 18] This is a cross-sectional view of the manufacturing process of another embodiment of the display device of the present invention. [Figure 19] This is a cross-sectional view of the manufacturing process of another example of the display device of the present invention. [Figure 20] This is a cross-sectional view of the manufacturing process of one embodiment of the present invention's display device, which is provided with a conductive film. [Figure 21] This is a cross-sectional view of the manufacturing process of one embodiment of the display device of the present invention, which is provided with a light-shielding section. [Figure 22] This is a front cross-sectional view showing one embodiment of the display device of the present invention, which is provided with a light-shielding section. [Figure 23] This is a front cross-sectional view showing one embodiment of the present invention's display device, which is provided with a conductive film. [Figure 24] This is a front cross-sectional view showing another embodiment of the present invention's display device, which is provided with a conductive film. [Figure 25] This is a front cross-sectional view showing another embodiment of the present invention's display device, which is provided with a conductive film. [Figure 26] This is a front cross-sectional view showing another embodiment of the present invention's display device, which is provided with a conductive film. [Figure 27] This is a front cross-sectional view of one embodiment of the display device of the present invention using another example of a light-emitting element. [Figure 28] This is a front cross-sectional view showing another embodiment of the present invention's display device, which is provided with a conductive film. [Figure 29] This is a front cross-sectional view showing another embodiment of the present invention's display device, which is provided with a conductive film. [Modes for carrying out the invention]

[0009] The following describes preferred embodiments of the display device of the present invention, but the present invention is not limited to the following embodiments and can be implemented with various modifications depending on the purpose and application.

[0010] The present invention relates to a display device having at least metal wiring, a cured film, an inorganic insulating film, and a plurality of light-emitting elements, wherein the cured film is a film obtained by curing a resin composition containing (A) resin, the light-emitting elements are inorganic light-emitting diodes having a pair of electrode terminals on either side, the pair of electrode terminals are connected to a plurality of metal wirings extending through the cured film and the inorganic insulating film, and electrical insulation is maintained between the plurality of metal wirings by the cured film and the inorganic insulating film, the cured film has a plurality of layers, and the inorganic insulating film is arranged to be in contact with at least a portion of the spaces between the layers of the plurality of cured films.

[0011] The display device of the present invention will be explained using Figure 1 as an example of one embodiment. In Figure 1, the display device 1 has multiple light-emitting elements 2 arranged on a counter substrate 5, and a cured film 3 arranged on the light-emitting elements 2. "On the light-emitting elements" refers not only to the surface of the light-emitting elements, but also to the support substrate or the upper side of the light-emitting elements. In the embodiment shown in Figure 1, a configuration is illustrated in which multiple cured films 3 are further laminated on a cured film 3 that is arranged so as to be in contact with at least a part of the light-emitting elements 2, for a total of three layers, but the cured film 3 may also be two layers. The light-emitting elements 2 have a pair of electrode terminals 6 on the side opposite to the side in contact with the counter substrate 5, and each electrode terminal 6 is connected to a plurality of metal wirings 4 that extend through the cured film 3 and the inorganic insulating film 19.

[0012] Furthermore, if the multiple metal wirings 4 extending within the cured film 3 and the inorganic insulating film 19 are covered by the cured film 3, the inorganic insulating film 19, or both, the cured film 3 and the inorganic insulating film 19 also function as insulating films, thus maintaining electrical insulation. The configuration in which the metal wiring maintains electrical insulation means that (A) the portion of the metal wiring requiring electrical insulation is covered by the cured film obtained by curing a resin composition containing resin and the inorganic insulating film, and the cured film and the inorganic insulating film have a volume-retaining resistivity of 1012 This means maintaining electrical insulation of Ω·cm or higher.

[0013] Furthermore, the light-emitting element 2 is electrically connected to a drive element 8 attached to a light-emitting element drive substrate 7, which is positioned opposite the opposing substrate 5, via metal wiring 4 and 4c, thereby allowing the light emission of the light-emitting element 2 to be controlled. The light-emitting element drive substrate 7 is electrically connected to the metal wiring 4, for example, via solder bumps 10. In addition, a barrier metal 9 may be provided to prevent the diffusion of metal such as the metal wiring 4. In the figures below, the metal wiring 4c may penetrate the light-emitting element drive substrate 7 and be connected to the drive element 8.

[0014] The cured film is a film obtained by curing a resin composition containing the resin (A) described later, and it is important that the inorganic insulating film is arranged so as to be in contact with at least a portion of the cured film. This reduces warping of the display device, alleviates such stress concentration, and suppresses delamination and cracking. Therefore, in the manufacturing process of the display device and in the reliability testing process, which is an accelerated test of actual use, displacement and delamination of the light-emitting element, peeling of metal wiring, and cracking can be suppressed, and a display device with a low defect rate after reliability testing can be obtained. Examples of reliability tests include impact tests, high-temperature holding tests, constant temperature and high humidity tests, and thermal cycle tests.

[0015] The inorganic insulating film is formed, for example, by the CVD method. The thickness of the inorganic insulating film is preferably 0.2 μm or more, more preferably 0.4 μm or more, and particularly preferably 0.8 μm or more. Furthermore, the thickness of the inorganic insulating film is preferably 1.0 μm or less. The material of the inorganic insulating film is not particularly limited, and known materials can be used. For example, silicon dioxide (SiO₂) x ), silicon nitride (SiN x ), aluminum oxide (Al x O y ) or aluminum nitrite (Al x O y N z Inorganic materials consisting of one or more of the following as main components are used. Furthermore, when these inorganic insulating films reflect light, they also function as reflective films. The light that passes through the cured film 3 is reflected by the inorganic insulating film, increasing the light extraction efficiency and improving brightness. This reduces warping of the display device, alleviates stress concentration, suppresses delamination and cracking, and improves light extraction efficiency, thereby enhancing brightness.

[0016] The display device of the present invention preferably has a sandwich structure in which the cured film is arranged so as to be in contact with both sides of the inorganic insulating film. A sandwich structure refers to a structure in which the cured film 3 is laminated so as to be in contact with the upper and lower surfaces of the inorganic insulating film 19, as shown in Figure 1. As an alternative embodiment of the display device, the sandwich structure may be present throughout the entire interlayer space of the cured film 3, excluding the portion of the metal wiring 4, as shown in Figure 11, or the sandwich structure may be present in a portion of the interlayer space of the cured film 3, as shown in Figure 12.

[0017] Furthermore, it is preferable that the display device of the present invention has a sandwich structure in which the inorganic insulating film is placed between the cured film located at the first furthest position relative to the light-emitting element and the cured film located at the second furthest position relative to the light-emitting element, in the direction perpendicular to the plane on which the plurality of cured films are stacked. Specifically, as explained in Figure 1, a plurality of light-emitting elements 2 are arranged on a plane, and a plurality of cured films 3 are stacked on one surface of the plane, for a total of three layers. It is preferable that the inorganic insulating film is placed between the cured film located at the first furthest position relative to the plurality of cured films 3 in the direction perpendicular to the plane and the cured film located at the second furthest position relative to the light-emitting element.

[0018] Furthermore, in the sandwich structure, when the thickness of the cured film located at the furthest position is α (μm), the thickness of the inorganic insulating film between the cured film located at the furthest position and the cured film located at the second furthest position is β (μm), and the thickness of the cured film located at the second furthest position is γ (μm), it is preferable that α > γ, 6 ≤ α / β ≤ 100, and 0.01 ≤ β / γ ≤ 0.75. Specifically, as explained in Figure 1, when the thickness 23 of the cured film located at the furthest position is α (μm), the thickness 22 of the inorganic insulating film between the cured film located at the furthest position and the cured film located at the second furthest position is β (μm), and the thickness of the cured film 24 located at the second furthest position is γ (μm), it is preferable that α > γ, 6 ≤ α / β ≤ 100, and 0.01 ≤ β / γ ≤ 0.75 are satisfied, and it is more preferable that α > γ, 7 ≤ α / β ≤ 40, and 0.04 ≤ β / γ ≤ 0.30 are satisfied. Here, the thickness α~γ (μm) refers to the maximum film thickness in each layer of the cured film. This reduces warping of the display device during reliability testing, alleviates stress concentration, suppresses delamination and cracking, and prevents insulation degradation from continuous high-voltage application during operation. Furthermore, in the present invention, it is preferable that the total thickness of the insulating layer, including the cured film and the inorganic insulating film, is 5 μm to 100 μm. The metal wiring 4 may also include electrodes. The material of the metal wiring 4 is not particularly limited, and known materials can be used. Examples include gold, silver, copper, aluminum, nickel, titanium, molybdenum, and alloys containing these materials, with copper being preferred. The metal wiring 4 may also include electrodes.

[0019] In the display device of the present invention, the metal wiring may be a conductive film. The conductive film is not particularly limited. For example, it includes compounds containing, as a main component, oxides of at least one element such as indium, gallium, zinc, tin, titanium, and niobium, organic substances, and photosensitive conductive pastes containing conductive particles. Other known ones may also be used. Specific examples of the compounds containing, as a main component, oxides of at least one element such as indium, gallium, zinc, tin, titanium, and niobium include indium tin zinc oxide (ITZO), indium gallium zinc oxide (IGZO: InGaZnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium tin oxide (ITO), and indium oxide (InO).

[0020] These conductive films can be formed by, for example, wet plating such as electroless plating and electrolytic plating, CVD chemical vapor deposition methods (CVD) such as thermal CVD, plasma CVD, and laser CVD, dry plating methods such as vacuum evaporation, sputtering, and ion plating, and methods such as bonding a metal foil to a substrate and then performing etching.

[0021] Regarding the photosensitive conductive paste containing organic substances and conductive particles, examples of the organic substances include epoxy resins, phenoxy resins, acrylic copolymers, epoxy carboxylate compounds, etc. Two or more of these may be contained. Also, an organic substance having a urethane bond may be contained. By containing an organic substance having a urethane bond, the flexibility of the wiring can be improved. Further, the organic substance preferably exhibits photosensitivity, and a fine wiring pattern can be easily formed by photolithography. The photosensitivity is expressed, for example, by containing a photoinitiator and a component having an unsaturated double bond.

[0022] The conductive particles in the present invention refer to those having an electrical resistivity of 10 -5This refers to particles composed of materials with a density of Ω·m or less. Examples of materials that make up conductive particles include silver, gold, copper, platinum, lead, tin, nickel, aluminum, tungsten, molybdenum, chromium, titanium, indium, alloys of these metals, and carbon particles. Note that conductive films also include electrodes. An example of a display device using a conductive film is shown in Figures 28 and 29.

[0023] As another embodiment of the present invention, as shown in Figure 11, a configuration is provided in which a cured film 20 is provided on the display device of Figure 1 so as to be in contact with at least a part of the light-emitting element 2. The cured film 20 provided so as to be in contact with at least a part of the light-emitting element 2 may be composed of a resin composition containing (A) resin or a cured film obtained by curing a resin sheet, or it may be composed of a material other than a cured film obtained by curing a resin composition containing (A) resin or a resin sheet, and known materials such as epoxy resin, silicone resin, and fluororesin may be used.

[0024] In the present invention, the light-emitting element driving substrate 7 is a substrate having an element with a driving function, and it is preferable that the driving element 8 is connected to it. The light-emitting element driving substrate 7 is not particularly limited, and known substrates can be used. Examples include glass substrates, sapphire substrates, printed circuit boards, TFT array substrates, and ceramics. In the present invention, it is preferable that the total thickness of the insulating layer, including the cured film and the inorganic insulating film, is 5 μm to 100 μm.

[0025] By having an overall thickness of 5 μm to 100 μm for the insulating layer, including the cured film and the inorganic insulating film, absorption of light emitted in all directions from the light-emitting element 2 in the cured film 3 is suppressed, increasing light extraction efficiency and improving brightness. Furthermore, it becomes possible to reduce the height of the display device itself with the light-emitting element, suppress wiring defects such as short circuits due to shorter wiring distances, reduce losses, and improve high-speed response.

[0026] The total thickness of the insulating layer, including the cured film and the inorganic insulating film, refers to the total thickness of a continuous layer of cured films where at least a portion of one cured film is in contact with other cured films and inorganic insulating films. For example, when multiple layers of cured films 3 and inorganic insulating films 19 are stacked as shown in Figure 1 above, the area indicated by 18 in Figure 1 is the total thickness of the insulating layer, including the cured films and inorganic insulating films. The total thickness is preferably 7 to 70 μm, more preferably 8 to 60 μm. If it is less than 5 μm, the protection of the metal wiring is insufficient, raising concerns about wiring defects such as short circuits. If it exceeds 100 μm, there is a concern that the light extraction efficiency will be insufficient, and it may also cause disadvantages in terms of reducing the height of the display device itself, suppressing wiring defects such as short circuits due to shorter wiring distances, suppressing loss reduction, and improving high-speed response.

[0027] Furthermore, when multiple cured films are laminated, it is preferable that the number of cured film layers be between 2 and 10. Here, even if an inorganic insulating film is placed between the layers of the cured film, the inorganic insulating film is not included in the number of cured film layers. From the viewpoint of arranging multiple light-emitting elements, the cured film is preferably made of two or more layers, and by making it three or more layers, the number of metal wirings that can be connected to the light-emitting elements can be increased, thus allowing for the arrangement of multiple light-emitting elements. Furthermore, from the viewpoint of reducing the package height and shortening the wiring distance, thereby suppressing wiring defects such as short circuits, reducing losses, and improving high-speed response, it is preferable to have 10 or fewer layers.

[0028] In the present invention, the cured film is provided with an opening pattern that penetrates in the thickness direction, and metal wiring is arranged in at least the opening pattern, and it is preferable that the longest length of the bottom surface of the metal wiring formed in contact with the light-emitting element is 2 to 20 μm. Figure 2 shows an enlarged front cross-sectional view (upper part) of designated region A in Figure 1 and a bottom view (lower part) of designated region A excluding the light-emitting element. In the enlarged front cross-sectional view (upper part) of designated region A in Figure 2, the cured film 3 is provided on the light-emitting element 2. The cured film 3 has an opening pattern 12, and the figure shows metal wiring 4 formed in the opening pattern 12. The metal wiring 4 extends into the cured film 3 and is in contact with the electrode terminals 6 of the light-emitting element 2, and the bottom portion 13 of the metal wiring 4 shows the shape of the metal wiring 4 at the point where it is in contact with the electrode terminals 6 of the light-emitting element 2. In the bottom view (lower part) of designated region A in Figure 2, excluding the light-emitting element, the bottom portion 13 of the metal wiring 4 extending into the hardened film 3 is viewed from below with the light-emitting element 2 removed, and the bottom portion 13 is shown. The shape of the bottom portion 13 may differ depending on the product and the form of the light-emitting element. In the case of a circular shape, the diameter is defined as the longest length 14; in the case of an elliptical shape, the major axis is defined as the longest length 14; and in the case of a polygon such as a rectangle, the longest diagonal when connecting the vertices of the corners is defined as the longest length 14. Note that the bottom portion 13 in the bottom view (lower part) of designated region A in Figure 2, excluding the light-emitting element, shows an example of a circular shape.

[0029] This configuration allows for the application of minute light-emitting elements and enables high-density mounting of multiple light-emitting elements, resulting in a display device with high-resolution light-emitting elements across a wide range of sizes. Furthermore, it becomes possible to form finer metal wiring, increasing the number of wirings that can be formed per unit area, thus reducing the overall thickness of the cured film. This suppresses the absorption of light emitted in all directions from the light-emitting element 2 within the cured film 3, improving light extraction efficiency and enhancing brightness. In addition, it enables the display device itself to be made lower profile, reduces wiring defects such as short circuits due to shorter wiring distances, reduces losses, and improves high-speed response. In the present invention, the maximum length of the bottom surface of the metal wiring formed in close proximity to the light-emitting element may be 2 to 20 μm.

[0030] This configuration allows for the application of minute light-emitting elements and enables high-density mounting of multiple light-emitting elements, resulting in a display device with high-resolution light-emitting elements across a wide range of sizes. Furthermore, it becomes possible to form finer metal wiring, increasing the number of wirings that can be formed per unit area, thus reducing the overall thickness of the cured film. This suppresses the absorption of light emitted in all directions from the light-emitting element 2 within the cured film 3, improving light extraction efficiency and enhancing brightness. In addition, it enables the display device itself to be made lower profile, reduces wiring defects such as short circuits due to shorter wiring distances, reduces losses, and improves high-speed response.

[0031] From the viewpoint of applying minute light-emitting elements and achieving high-density mounting of light-emitting elements, the maximum length of the bottom surface of the metal wiring is preferably 2 to 15 μm, more preferably 2 to 10 μm, and even more preferably 2 to 5 μm. If it is less than 2 μm, poor connection with the light-emitting element 2 may occur, and if it exceeds 20 μm, it may hinder the application of minute light-emitting elements and high-density mounting.

[0032] Furthermore, the thickness of the cured film is preferably 1.1 times or more and 4.0 times or less the thickness of the metal wiring. The thickness of the metal wiring, as explained in the front enlarged cross-sectional view (upper part) of designated area A in Figure 2, refers to the thickness of the metal wiring 4a arranged on the surface of the cured film 3, and does not include the thickness of the metal wiring 4b extending through the opening pattern that penetrates in the thickness direction within the cured film 3. The thickness of the metal wiring is preferably 0.1 to 10 μm, and more preferably 3 to 10 μm. By setting the thickness of the metal wiring to 0.1 to 10 μm, it becomes possible to reduce the height of the display device itself having the light-emitting element, suppress wiring defects such as short circuits due to shorter wiring distances, suppress reduction of losses, and improve high-speed response. Furthermore, by setting it to 3 to 10 μm, wiring resistance can be reduced, which can contribute to reducing power consumption and improving brightness.

[0033] The thickness of the cured film, as explained in the enlarged front cross-sectional view (upper part) of designated area A in Figure 2, refers to the thickness of the cured film 3a covering the metal wiring 4a. This allows for the creation of a highly reliable cured film that also acts as a protective layer for appropriate metal wiring, suppressing wiring defects such as short circuits. Furthermore, in the present invention, it is preferable that the cured film covers surfaces other than the light extraction surface of the light-emitting element.

[0034] As an example, Figure 3 shows an enlarged top cross-sectional view (upper part) of the designated area B in Figure 1, a cross-sectional view (middle part) of the designated area B with the wiring removed from a plane perpendicular to the front surface, and a bottom view (lower part) of the designated area B with the opposing substrate removed. In the enlarged top cross-sectional view (upper part) of the designated region B in Figure 3, the light-emitting element 2 is covered with a hardened film 3, and the metal wiring 4, which is connected to the electrode terminals 6 of the light-emitting element and extends into the hardened film 3, is shown from above. In the cross-sectional view (middle portion) of Figure 3, excluding the wiring in the plane perpendicular to the front view, it is shown that the area around the light-emitting element 2 is covered by the hardened film 3. In the bottom view (lower portion) of the designated region B in Figure 3, excluding the opposing substrate, it is shown that although the area around the light-emitting element 2 is covered by the cured film 3, one side of the light-emitting element 2 is not covered by the cured film 3.

[0035] As shown in Figures 1 and 3, by covering the entire side surface and top surface of the light-emitting element 2 with a cured film 3, the light-emitting element 2 can be protected from external impacts. Furthermore, it is preferable because it can flatten any steps caused by the arrangement of the light-emitting element 2 and facilitate bonding with the opposing substrate 5.

[0036] Furthermore, in the present invention, it is preferable to provide a reflective film on the cured film. As shown in Figure 4, a reflective film 15 is provided on the cured film 3 arranged around the light-emitting element 2. By providing the reflective film 15 on the cured film 3, the light that has passed through the cured film 3 is reflected by the reflective film 15, further increasing the extraction efficiency and improving brightness. In addition, in reliability tests, it is possible to suppress the deterioration of metal wiring and the cured film due to water absorption and light, so a display device with a low defect rate can be obtained, which is preferable.

[0037] The reflective film can be placed anywhere on the cured film, and can be arranged to surround the light-emitting element on all four sides in the direction of extraction, at an angle to the light-emitting element, or in a curved manner. The reflective film can be any film that reflects light, such as aluminum, silver, copper, titanium, or alloys containing these materials, but it is not limited to these.

[0038] In the present invention, it is preferable to have partitions between a plurality of light-emitting elements having a thickness greater than or equal to the thickness of the light-emitting elements. As shown in Figure 5, it is preferable to have a repeating pattern corresponding to the number of pixels in the display device 1 having light-emitting elements 2, i.e., partition walls 16 between or around each light-emitting element 2. This configuration is preferable because it facilitates bonding with the opposing substrate 5. The thickness of the partition wall is preferably greater than the thickness of each light-emitting element, and specifically, 5 μm to 120 μm is preferred. The partition may be composed of a cured film obtained by curing a resin composition containing resin (A), or it may be composed of a material other than a resin composition containing resin (A), and known materials such as epoxy resin, (meth)acrylic polymer, polyurethane, polyester, polyolefin, and polysiloxane may be used. By using these materials, a partition with excellent adhesion can be formed.

[0039] To suppress light leakage from the light-emitting elements and color mixing between pixels, and to improve contrast, light-shielding portions may be provided on the sides of the partition or on the partition itself. The light-shielding portion is, for example, a part containing black pigment. Furthermore, the light emitted from the light-emitting element towards the partition can be reflected to improve the light extraction efficiency, and a reflective film may be provided on the side of the partition to improve brightness. The reflective film is, for example, a part containing a white pigment.

[0040] It is preferable to place partitions having a thickness greater than or equal to the thickness of the light-emitting elements between a plurality of light-emitting elements in the cured film covering the light-emitting elements. As an alternative embodiment for providing partitions, Figure 6 illustrates a configuration in which partitions 16 are provided between or around the light-emitting elements 2 within the cured film 3 covering the light-emitting elements 2. The partition shown in Figure 6 may be composed of materials other than the resin composition containing (A) resin, and known materials such as epoxy resin, (meth)acrylic polymer, polyurethane, polyester, polyolefin, and polysiloxane may be used. By using these materials, a partition with excellent adhesion can be formed. By arranging a partition wall, it can serve as a marker when transferring the light-emitting element later, and it can also be used as a photospacer, thus improving the efficiency of light-emitting element transfer, which is preferable.

[0041] In the present invention, it is also preferable to arrange partitions having a thickness greater than or equal to the thickness of the light-emitting elements between a plurality of light-emitting elements, and to provide a reflective film around the partitions. Specifically, as shown in Figures 7 and 8, one example of a display device configuration is one in which a partition wall 16 having a thickness greater than or equal to the thickness of the light-emitting elements 2 is placed between a plurality of light-emitting elements 2, and a reflective film 15 is provided around the partition wall. By providing a reflective film around the partition wall, the light emitted from the light-emitting element is reflected by the reflective film around the partition wall, thereby increasing the light extraction efficiency and improving brightness. In the present invention, a light-diffusing layer may be provided around the light-emitting element, the cured film, or the metal wiring.

[0042] In the present invention, it is preferable that the light-emitting element is an inorganic light-emitting diode with a side length of 5 μm or more and 700 μm or less, and it is even more preferable that the light-emitting element is an inorganic light-emitting diode with a side length of 5 μm or more and 100 μm or less.

[0043] Inorganic light-emitting diodes (LEDs) are constructed using a PN junction, where a P-type semiconductor and an N-type semiconductor are joined. When a forward voltage is applied to an inorganic LED, electrons and holes move within the chip, causing an electric current to flow. This energy difference, resulting from the bonding of electrons and holes, is converted into light energy, causing light to be emitted. The wavelength of light emitted from an inorganic LED varies depending on the semiconductor compound used, such as GaN, GaAs, InGaAlP, and GaP. This difference in wavelength determines the color of the emitted light. While white light is typically displayed by mixing two or more different colors, inorganic LEDs allow for a significant improvement in color reproduction by mixing the three primary colors: red, green, and blue, enabling the display of a more natural white light.

[0044] Inorganic light-emitting diodes (LEDs) can take various shapes, such as bullet-shaped, chip-shaped, or polygonal, but chip-shaped and polygonal shapes are preferred from the viewpoint of miniaturizing inorganic LEDs. Furthermore, it is preferable that the side length of the inorganic LED is between 5 μm and 700 μm so that multiple chips can be arranged, and it is even more preferable that the side length of the inorganic LED is between 5 μm and 100 μm.

[0045] Furthermore, in the present invention, it is preferable to provide electrodes on discontinuous surfaces. Discontinuous surfaces are not continuous surfaces, but rather surfaces with steps or other differences, such as the structure shown in Figure 27. By providing electrode terminals 6 on discontinuous surfaces, the light-emitting area in the light-emitting element can be controlled, and the productivity and luminous efficiency of the light-emitting element can be improved.

[0046] Regarding the mounting method of inorganic light-emitting diodes onto substrates such as the light-emitting element driving substrate 7, methods such as the pick-and-place method and the mass transfer method have been proposed, but the invention is not limited to these. Regarding the mounting of inorganic light-emitting diodes (LEDs) onto substrates such as the light-emitting element drive substrate 7, examples include mounting red, green, and blue LEDs in a matrix arrangement at predetermined positions on the light-emitting element drive substrate 7, or mounting a single type of inorganic light-emitting diode, such as a red or blue LED or an ultraviolet LED, on a substrate such as the light-emitting element drive substrate. The latter method facilitates the array mounting of inorganic LEDs. In this case, wavelength conversion materials such as quantum dots can be used to create red, green, and blue subpixels, enabling full-color display.

[0047] Known materials can be used as wavelength conversion materials. For example, when using inorganic light-emitting diodes that emit blue light, it is preferable to first fabricate an inorganic light-emitting diode array substrate by arranging and mounting only inorganic light-emitting diodes that emit blue light, and then arrange wavelength conversion layers that are excited by blue light and emit red or green light when wavelength-converted, at positions corresponding to red and green subpixels. This makes it possible to form red, green, and blue subpixels using only inorganic light-emitting diodes that emit blue light.

[0048] On the other hand, when using ultraviolet inorganic light-emitting diodes that emit ultraviolet light, it is preferable to first fabricate an inorganic light-emitting diode array substrate by arranging and mounting only ultraviolet inorganic light-emitting diodes, and then arrange wavelength conversion layers at positions corresponding to red, green, and blue subpixels, which are excited by ultraviolet light and emit light by wavelength conversion to red, green, and blue. This makes it possible to suppress the difference in light emission angle due to the color of the subpixels mentioned above. A known wavelength conversion layer can be used, and a color filter or the like may be used as needed.

[0049] Examples of opposing substrates in the present invention include glass plates, resin plates, and resin films. For glass plates, alkali-free glass is preferred. For resin plates and resin films, polyester, (meth)acrylic polymer, transparent polyimide, and polyethersulfone are preferred. The thickness of the glass plate and resin plate is preferably 1 mm or less, and more preferably 0.8 mm or less. The thickness of the resin film is preferably 100 μm or less.

[0050] In the present invention, it is preferable that the display device comprises a driving element and that the light-emitting element is electrically connected to the driving element through metal wiring extending into the cured film. By comprising a driving element and having the light-emitting element electrically connected to the driving element through metal wiring extending into the cured film, multiple light-emitting elements can be individually switched and driven. Examples of driving elements include driver ICs, and multiple driver ICs may be used for one inorganic light-emitting diode or for one unit of inorganic light-emitting diodes consisting of red, blue, and green, depending on their function.

[0051] Furthermore, as shown in Figure 9, a configuration in which the driving element is arranged is preferable, in which the driving element 8 is placed in the cured film 3 on the opposing substrate 5 near the light-emitting element 2. Also, as shown in Figure 10, a configuration in which the driving element 8 is placed in the cured film above the light-emitting element 2 is also preferable. This makes it possible to suppress wiring defects such as short circuits by shortening the wiring distance, reduce losses, and improve high-speed response.

[0052] In the present invention, it is preferable to further include a driving element and a substrate, wherein the driving element is connected to a light-emitting element via metal wiring, and at least a portion of the metal wiring extends to the side surface of the substrate. By having a driving element and a substrate, wherein the driving element is connected to a light-emitting element via metal wiring, and at least a portion of the metal wiring extends to the side surface of the substrate, multiple light-emitting elements can be individually switched and driven, the height of the display device itself can be reduced and the response speed can be improved, and the display device can be made even smaller and with a narrower bezel.

[0053] The substrate is not particularly limited, similar to the light-emitting element driving substrate 7, and known substrates can be used. Examples include glass substrates, sapphire substrates, printed circuit boards, TFT array substrates, and ceramics. At least a portion of the metal wiring extending to the side of the substrate can be made of, for example, gold, silver, copper, aluminum, nickel, titanium, tungsten, aluminum, tin, chromium, or alloys containing these materials. The metal wiring extending to the side of the substrate can be formed by, for example, wet plating such as electroless plating or electrolytic plating, CVD chemical vapor deposition (CVD) methods such as thermal CVD, plasma CVD, and laser CVD, dry plating methods such as vacuum deposition, sputtering, and ion plating, or by etching after bonding a metal foil to the substrate. Grooves may also be provided on the side of the substrate. In this case, the grooves reliably separate adjacent metal wirings, thereby suppressing short circuits between them. Grooves for arranging the side conductor wires can be formed by cutting, etching, laser processing, or the like.

[0054] A preferred configuration for the metal wiring is, for example, the arrangement shown in Figure 1 and Figure 5, 4c. In the present invention, the metal wiring may be a conductive film. Examples of conductive films include compounds mainly composed of an oxide of at least one element from among indium, gallium, zinc, tin, titanium, and niobium, as well as photosensitive conductive pastes containing organic matter and conductive particles, but other known materials may also be used.

[0055] Compounds containing an oxide of at least one element from among indium, gallium, zinc, tin, titanium, and niobium as a main component include, specifically, indium tin zinc oxide (ITZO), indium gallium zinc oxide (IGZO: InGaZnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium tin oxide (ITO), and indium oxide (InO).

[0056] These conductive films can be formed by methods such as wet plating including electroless plating and electrolytic plating, chemical vapor deposition (CVD) methods including thermal CVD, plasma CVD, and laser CVD, dry plating methods such as vacuum deposition, sputtering, and ion plating, and etching after bonding a metal foil to a substrate.

[0057] In a photosensitive conductive paste containing organic matter and conductive particles, the content of conductive particles is preferably 60 to 90% by mass. The presence of organic matter in the conductive layer suppresses wire breakage in curved surfaces and bends, and improves conductivity. If the content of conductive particles is less than 60% by mass, the probability of contact between conductive particles decreases, and conductivity decreases. Also, conductive particles tend to separate from each other in bends in the wiring. The content of conductive particles is preferably 70% by mass or more. On the other hand, if the content of conductive particles exceeds 90% by mass, it becomes difficult to form wiring patterns, and wire breakage is more likely to occur in bends. The content of conductive particles is preferably 80% by mass or less.

[0058] Examples of organic materials include epoxy resins, phenoxy resins, acrylic copolymers, and epoxy carboxylate compounds. Two or more of these may be included. Organic materials having urethane bonds may also be included. Including organic materials having urethane bonds can improve the flexibility of the wiring. Furthermore, it is preferable that the organic material exhibits photosensitivity, allowing for the easy formation of fine wiring patterns by photolithography. Photosensitivity can be achieved, for example, by including a photopolymerization initiator or a component having an unsaturated double bond.

[0059] In this invention, conductive particles have an electrical resistivity of 10 -5This refers to particles composed of materials with a density of Ω·m or less. Examples of materials that make up conductive particles include silver, gold, copper, platinum, lead, tin, nickel, aluminum, tungsten, molybdenum, chromium, titanium, indium, alloys of these metals, and carbon particles. It is also preferable to contain two or more types of conductive particles. By containing two or more types of conductive particles, it is possible to suppress the sintering and volume shrinkage of similar conductive particles during the heat treatment process described later, thereby suppressing the overall volume shrinkage of the conductive film and improving its flexibility.

[0060] The average particle diameter of the conductive particles is preferably 0.005 to 2 μm. Here, the average particle diameter refers to the average particle diameter of the larger diameter particles when two or more types of conductive particles are included. When the average particle diameter of the conductive particles is 0.005 μm or more, the interaction between conductive particles is moderately suppressed, and the dispersion state of the conductive particles can be maintained more stably. The average particle diameter of the conductive particles is more preferably 0.01 μm or more. On the other hand, when the average particle diameter of the conductive particles is 2 μm or less, it becomes easier to form the desired wiring pattern. The average particle diameter of the conductive particles is more preferably 1.5 μm or less.

[0061] The thickness of the conductive film is preferably 2 to 10 μm. A thickness of 2 μm or more can further suppress wire breakage at bent sections and improve conductivity. A thickness of 4 μm or more is more preferable. On the other hand, a thickness of 10 μm or less allows for easier formation of wiring patterns during the manufacturing process. A thickness of 8 μm or less is more preferable.

[0062] A preferred configuration for the conductive film is, for example, the arrangement shown in 28 in Figures 23 to 26. In the present invention, it is preferable to have a light-shielding section between the multiple light-emitting elements. By having a light-shielding section between the multiple light-emitting elements, it is possible to suppress light leakage from the light-emitting elements and color mixing between each pixel without significantly impairing reliability or light extraction efficiency, thereby improving contrast.

[0063] The light-shielding portion may be composed of a cured film obtained by curing a resin composition containing (A) resin and (E) coloring agent, or it may be composed of a material other than the resin composition containing (A) resin, and known materials such as epoxy resin, (meth)acrylic polymer, polyurethane, polyester, polyolefin, and polysiloxane may be used. As the (E) coloring agent, black pigments may be used, for example, black organic pigments such as carbon black, perylene black, and aniline black, graphite, and inorganic pigments such as metal fine particles of titanium, copper, iron, manganese, cobalt, chromium, nickel, zinc, calcium, and silver, metal oxides, composite oxides, metal sulfides, metal nitrides, and metal oxynitrides. In addition, red pigments and blue pigments, and if necessary yellow pigments and other pigments may be combined to make black. Dyes may also be used. Two or more types of coloring agents may be included. (A) The resin composition containing the resin and (E) the coloring agent may be made photosensitive, or (B) the photosensitive agent described below may be used.

[0064] A preferred method for producing a resin composition containing (A) resin and (E) colorant is to disperse a resin solution containing (A) resin, (E) colorant, and optionally a dispersant and an organic solvent using a disperser to prepare a colorant dispersion with a high concentration of colorant, and then add (A) resin and optionally other components such as a photosensitive agent and stir. Filtration may be performed as needed.

[0065] Examples of dispersers include ball mills, bead mills, sand grinders, three-roll mills, and high-speed impact mills. Among these, bead mills are preferred for their efficiency in dispersion and for fine dispersion. Examples of bead mills include ball mills, basket mills, pin mills, and dyno mills. Examples of beads used in bead mills include titania beads, zirconia beads, and zircon beads. The bead diameter of the bead mill is preferably 0.03 to 1.0 mm. (E) When the primary particle size of the coloring agent and the particle size of the secondary particles formed by the aggregation of primary particles are small, it is preferable to use minute beads with a diameter of 0.03 to 0.10 mm. In this case, a bead mill equipped with a separator using a centrifugal separation method that can separate the minute beads from the dispersion is preferred. On the other hand, when dispersing a coloring agent containing coarse particles of the submicron size, it is preferable to use beads with a diameter of 0.10 mm or more in order to obtain sufficient grinding power.

[0066] A resin composition containing (A) resin and (E) coloring agent can be applied to various substrates, dried, and then heat-treated to obtain a light-shielding area. If the substrate is photosensitive, a patterned light-shielding area can be obtained by exposure to a chemical beam as described below, followed by development and heat treatment as described below.

[0067] The thickness of the light-shielding portion is preferably 0.1 to 5 μm. If the thickness of the light-shielding portion is 0.1 μm or more, light leakage from the light-emitting element and color mixing between each pixel can be suppressed, and contrast can be improved. The thickness of the light-shielding portion is more preferably 0.5 μm or more. On the other hand, if the thickness of the wiring is 5 μm or less, light leakage from the light-emitting element and color mixing between each pixel can be suppressed, and contrast can be improved without significantly impairing the light extraction efficiency. The thickness of the light-shielding portion is more preferably 4 μm or less.

[0068] The light-shielding portion is formed by creating a colored film with a thickness of 1.0 μm on alkali-free glass with a thickness of 0.7 mm. The reflected chromaticity values ​​(a*, b*) measured from the glass surface are preferably -0.5 ≤ a* ≤ 1.0 and -1.0 ≤ b* ≤ 0.5, and preferably -0.5 ≤ a* ≤ 0.5 and -1.0 ≤ b* ≤ 0.4. Reflected chromaticity is an indicator of the color tone of the image reflected on the colored film, and the closer (a*, b*) is to (0.0, 0.0), the more achromatic the reflected color tone is. On the other hand, the reflected color tone of black display on liquid crystal displays and organic EL displays generally has a negative b* value and is a bluish color tone, so it is preferable for decorative films used in display devices to have a negative b* value.

[0069] The reflective chromaticity (L*, a*, b*) of a colored film is obtained by measuring the total reflected chromaticity (SCI) for light incident on a transparent substrate using a spectrophotometer (CM-2600d; manufactured by Konica Minolta, Inc.) calibrated with a white calibration plate (CM-A145; manufactured by Konica Minolta, Inc.) under the following measurement conditions: standard light source D65 (color temperature 6504K), viewing angle 2° (CIE1976), atmospheric pressure, and 20°C. A preferred configuration for the light-shielding portion is, for example, the arrangement shown as shown in 29 of Figure 22. The light-shielding portion 29 may be in contact with the light-emitting element 2, or it may be at a distance from it.

[0070] In the present invention, regarding the cured film obtained by curing a resin composition containing resin (A), it is preferable that resin (A) has high heat resistance, specifically that it exhibits little resin degradation at high temperatures of 160°C or higher during and after heat treatment, and that it exhibits little formation of structures such as quinone structures, which are one type of colored structure, due to resin degradation or decomposition. Furthermore, such a cured film is preferable because it exhibits a low amount of outgassing, which is one of the excellent properties of a cured film used as a display device, such as an insulating film, protective film, and partition.

[0071] Furthermore, (A) resin is preferable to have high light transmittance at the exposure wavelength before curing, from the viewpoint of forming a desired aperture pattern by exposure and development. To obtain such properties, it is preferable, for example, to shorten the conjugated chain derived from the aromatic ring of the resin, or to reduce intramolecular and intermolecular charge transfer.

[0072] Furthermore, for the protection of metal wiring, it is preferable that the film has excellent processability even when it is a thick film of 10 μm or more. (A) The resin is not particularly limited, but from the viewpoint of reducing environmental impact, it is preferably an alkali-soluble resin. Alkali solubility is defined as a pre-baked film with a thickness of 10 μm ± 0.5 μm formed by coating a silicon wafer with a solution of resin dissolved in γ-butyrolactone and pre-baking it at 120°C for 4 minutes. Next, the pre-baked film is immersed for 1 minute in an alkaline aqueous solution selected from 2.38% by mass tetramethylammonium hydroxide aqueous solution, 1% by mass potassium hydroxide aqueous solution, or 1% by mass sodium hydroxide aqueous solution at 23 ± 1°C, and then the film thickness reduction is determined when it is rinsed with pure water. A pre-baked film is defined as alkali-soluble if its dissolution rate is 50 nm / min or more.

[0073] The (A) resin preferably contains one or more resins selected from the group consisting of polyimide, polyimide precursors, polybenzoxazoles, polybenzoxazole precursors, and copolymers thereof. The (A) resin may contain these resins individually or in combination of multiple resins.

[0074] This section describes polyimides, polyimide precursors, polybenzoxazoles, and polybenzoxazole precursors. Polyimides are not particularly limited as long as they have an imide ring. Furthermore, polyimide precursors are not particularly limited as long as they have a structure that becomes a polyimide having an imide ring upon dehydration and cyclization, and can include polyamic acids and polyamic acid esters. Polybenzoxazoles are not particularly limited as long as they have an oxazole ring. Polybenzoxazole precursors are not particularly limited as long as they have a structure that becomes a polybenzoxazole having a benzoxazole ring upon dehydration and cyclization, and can include polyhydroxyamides.

[0075] Polyimide has a structural unit represented by general formula (1), polyimide precursors and polybenzoxazole precursors have a structural unit represented by general formula (2), and polybenzoxazole has a structural unit represented by general formula (3). Two or more of these may be contained, or a resin obtained by copolymerizing the structural unit represented by general formula (1), the structural unit represented by general formula (2), and the structural unit represented by general formula (3) may be contained.

[0076] [ka]

[0077] In general formula (1), V represents an organic group with 4 to 40 carbon atoms and a valency of 4 to 10, and W represents an organic group with 4 to 40 carbon atoms and a valency of 2 to 8. a and b each represent integers from 0 to 6. 1 and R 2 R represents a group selected from the group consisting of hydroxyl groups, carboxyl groups, sulfonic acid groups, and thiol groups, and multiple R 1 and R 2 These may be the same or different.

[0078] [ka]

[0079] In general formula (2), X and Y each independently represent a divalent to octavalent organic group having 4 to 40 carbon atoms. 3 and R 4 Each of these independently represents a hydrogen atom or a monovalent organic group with 1 to 20 carbon atoms. c and d are integers from 0 to 4, and e and f are integers from 0 to 2.

[0080] [ka]

[0081] In general formula (3), T and U each independently represent a divalent to octavalent organic group having 4 to 40 carbon atoms.

[0082] (A) In order to give the resin alkali solubility, it is preferable that the general formula (1) a+b>0. Furthermore, it is preferable that c+d+e+f>0 in general formula (2). In general formula (2), in the case of a polyimide precursor, it is preferable that X and Y in general formula (2) have aromatic groups. Moreover, X in general formula (2) has an aromatic group, e>2, and has a carboxyl group or carboxyester group at the ortho position of the aromatic amide group, forming an imide ring by dehydration cyclization.

[0083] Furthermore, in general formula (2), in the case of a polybenzoxazole precursor, X in general formula (2) has an aromatic group, d>0, and has a hydroxyl group at the ortho position of the aromatic amide group, forming a structure that forms a benzoxazole ring by dehydration cyclization.

[0084] (A) In the resin, the number of repeats n of the structural units represented by general formula (1), general formula (2), or general formula (3) is preferably 5 to 100,000, and more preferably 10 to 100,000. Furthermore, resin (A) may have other structural units in addition to the structural units represented by general formula (1), general formula (2), or general formula (3). Examples of other structural units include, but are not limited to, cardo structures and siloxane structures. In this case, it is preferable that the structural units represented by general formula (1) or general formula (2) be the main constituent units. Here, the main constituent units mean that the structural units represented by general formula (1), general formula (2), or general formula (3) account for 50 mol% or more of the total number of structural units, and it is more preferable that they account for 70 mol% or more.

[0085] In the above general formula (1), V-(R 1 ) a In the above general formula (2), (OH) c -X-(COOR 3 ) eIn the above general formula (3), T represents an acid residue. V is a tetravalent to decavalent organic group having 4 to 40 carbon atoms, with a preference for organic groups having 4 to 40 carbon atoms containing an aromatic ring or a cyclic aliphatic group. X and T are divalent to octavalent organic groups having 4 to 40 carbon atoms, with a preference for organic groups having 4 to 40 carbon atoms containing an aromatic ring or an aliphatic group.

[0086] Examples of acidic components that make up acid residues include dicarboxylic acids such as terephthalic acid, isophthalic acid, diphenyl ether dicarboxylic acid, bis(carboxyphenyl)hexafluoropropane, biphenyl dicarboxylic acid, benzophenone dicarboxylic acid, triphenyl dicarboxylic acid, suberic acid, dodecafluorosuberic acid, azelaic acid, sebacic acid, hexadecafluorosebacic acid, 1,9-nonanediic acid, dodecanediic acid, tridecanediic acid, tetradecanediic acid, pentadecanediic acid, hexadecanedioic acid, heptadecanedioic acid, and octa Examples of tricarboxylic acids include decanediic acid, nonadecanedioic acid, eicosanedioic acid, heneicosanedioic acid, docosanedioic acid, tricosanedioic acid, tetracosanedioic acid, pentacosanedioic acid, hexacosanedioic acid, heptacosanedioic acid, octacosanedioic acid, nonacosanedioic acid, triacontanedioic acid, etc. Examples of tricarboxylic acids include trimellitic acid, trimesic acid, diphenyl ethertricarboxylic acid, biphenyltricarboxylic acid, etc. Examples of tetracarboxylic acids include pyromellitic acid, 3,3',4,4'-biphenyltetracarboxylic acid, 2,3,3',4'-biphenyltetracarboxylic acid 2,2',3,3'-biphenyltetracarboxylic acid, 3,3',4,4'-diphenylethertetracarboxylic acid, 3,3',4,4'-benzophenonetetracarboxylic acid, 2,2',3,3'-benzophenonetetracarboxylic acid, 2,2-bis(3,4-dicarboxyphenyl)propane, 2,2-bis(2,3-dicarboxyphenyl)propane, 1,1-bis(3,4-dicarboxyphenyl)ethane, 1,1-bis(2,3-dicarboxyphenyl)ethane, bis(3,4-dicarboxyphenyl )methane, bis(2,3-dicarboxyphenyl)methane, bis(3,4-dicarboxyphenyl)ether, 1,2,5,6-naphthalenetetracarboxylic acid, 9,9-bis(3,4-dicarboxyphenyl)fluorene, 9,9-bis{4-(3,4-dicarboxyphenoxy)phenyl}fluorene, 2,3,6,7-naphthalenetetracarboxylic acid, 2,3,6,7-naphthalenetetracarboxylic acid, 2,3,5,6-pyridinetetracarboxylic acid, 3,4,9,10-perylenetetracarboxylic acid, 2,2-bis(3,Examples include, but are not limited to, 4-dicarboxyphenyl)hexafluoropropane and aromatic tetracarboxylic acids, butanetetracarboxylic acids, cyclobutanetetracarboxylic acids, 1,2,3,4-cyclopentanetetracarboxylic acids, etc., with the structures shown below. Two or more of these may be used.

[0087] [ka]

[0088] In the formula, R 17 R represents an oxygen atom, C(CF3)2, or C(CH3)2. 18 and R 19 represents a hydrogen atom or a hydroxyl group.

[0089] These acids can be used as is, or as acid anhydrides, halides, or activated esters. In the above general formula (1), W-(R 2 ) b , (OH) in the above general formula (2) d -Y-(COOR 4 ) f In the above general formula (3), U represents a diamine residue. W, Y, and U are 2-8 valent organic groups having 4-40 carbon atoms, with organic groups having 4-40 carbon atoms containing an aromatic ring or a cyclic aliphatic group being preferred.

[0090] Specific examples of diamines that make up diamine residues include hydroxyl group-containing diamines such as bis(3-amino-4-hydroxyphenyl)hexafluoropropane, bis(3-amino-4-hydroxyphenyl)sulfone, bis(3-amino-4-hydroxyphenyl)propane, bis(3-amino-4-hydroxyphenyl)methylene, bis(3-amino-4-hydroxyphenyl)ether, bis(3-amino-4-hydroxy)biphenyl, and bis(3-amino-4-hydroxyphenyl)fluorene, as well as 3-sulfonic acid-4,4'-diaminodiphenyl Sulfonic acid-containing diamines such as yl ethers, thiol-group-containing diamines such as dimercaptophenylenediamine, 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, 3,4'-diaminodiphenyl sulfone, 4,4'-diaminodiphenyl sulfone, 3,4'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfide, 1,4-bis(4-aminophenoxy)benzene, benzine, m-phenylenediamine, p-phenylene Diamine, 1,5-naphthalenediamine, 2,6-naphthalenediamine, bis(4-aminophenoxyphenyl)sulfone, bis(3-aminophenoxyphenyl)sulfone, bis(4-aminophenoxy)biphenyl, bis{4-(4-aminophenoxy)phenyl}ether, 1,4-bis(4-aminophenoxy)benzene, 2,2'-dimethyl-4,4'-diaminobiphenyl, 2,2'-diethyl-4,4'-diaminobiphenyl, 3,3'-dimethyl-4,4'-diaminobiphenyl, 3,3'-diethyl-4,4'-diaminobiphenyl, 2 Aromatic diamines such as 2',3,3'-tetramethyl-4,4'-diaminobiphenyl, 3,3',4,4'-tetramethyl-4,4'-diaminobiphenyl, and 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl, as well as compounds in which some of the hydrogen atoms of these aromatic rings are replaced with alkyl groups, fluoroalkyl groups, halogen atoms, etc., 2,4-diamino-1,3,5-triazine (guanamine), 2,4-diamino-6-methyl-1,3,5-triazine (acetoguanamine), 2,4-diamino-6-phenyl-1,Examples include diamines having nitrogen-containing heteroaromatic rings such as 3,5-triazine (benzoguanamine), silicone diamines such as 1,3-bis(3-aminopropyl)-1,1,3,3-tetramethyldisiloxane, 1,3-bis(p-aminophenyl)-1,1,3,3-tetramethyldisiloxane, 1,3-bis(p-aminophenethyl)-1,1,3,3-tetramethyldisiloxane, and 1,7-bis(p-aminophenyl)-1,1,3,3,5,5,7,7-octamethyltetrasiloxane, alicyclic diamines such as cyclohexyldiamine and methylenebiscyclohexylamine, and diamines with the structures shown below. Two or more of these may be used.

[0091] [ka]

[0092] In the formula, R 20 R represents an oxygen atom, C(CF3)2, or C(CH3)2. 21 ~R 24 Each of these independently represents either a hydrogen atom or a hydroxyl group. Among these, it is preferable to include at least one diamine having the structure shown below, from the viewpoint of improving alkali developability and the transmittance of (A) resin and its cured film.

[0093] [ka]

[0094] In the formula, R 20 R represents an oxygen atom, C(CF3)2, or C(CH3)2. 21 ~R 22 Each of these independently represents either a hydrogen atom or a hydroxyl group. These diamines can be used as diamines, or as diisocyanate compounds obtained by reacting diamines with phosgene, or as trimethylsilylated diamines.

[0095] Furthermore, the (A) resin preferably contains structural units selected from alkylene groups and alkylene ether groups. These groups may also include aliphatic rings. Among the structural units selected from alkylene groups and alkylene ether groups, structural units represented by general formula (4) are particularly preferred.

[0096] [ka]

[0097] In general formula (4), R 5 ~R 8 Each of these independently represents an alkylene group with 1 to 6 carbon atoms. 9 ~R 16 Each of the following independently represents a hydrogen atom, a fluorine atom, or an alkyl group having 1 to 6 carbon atoms. However, the structures represented in parentheses are all different. g, h, and i each independently represent an integer from 0 to 35, and g + h + i > 0. Examples of structural units represented by general formula (4) include ethylene oxide groups, propylene oxide groups, and butylene oxide groups, and they may be linear, branched, or cyclic. (A) The resin has structural units selected from alkylene groups and alkylene ether groups, thereby reducing the elastic modulus of the resin and its cured film, reducing warping of the display device, alleviating stress concentration, and suppressing peeling and cracking. Furthermore, the light transmittance at 450 nm before and after curing can be improved.

[0098] (A) The resin preferably contains a structural unit selected from the alkylene group and alkylene ether group in the W of general formula (1) or the Y of general formula (2). This improves the mechanical properties of the (A) resin and its cured film, particularly its elongation, and further improves the light transmittance at 450 nm before and after curing. In addition, it is possible to obtain high chemical resistance, high adhesion to the substrate metal, and resistance to constant temperature and humidity testing (HAST) by promoting ring closure in the cured film of the resin composition through low-temperature heat treatment.

[0099] Specific examples of diamines containing a group selected from alkylene groups and alkylene ether groups include ethylenediamine, 1,3-diaminopropane, 2-methyl-1,3-propanediamine, 1,4-diaminobutane, 1,5-diaminopentane, 2-methyl-1,5-diaminopentane, 1,6-diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 1,10-diaminodecane, 1,11-diaminoundecane, 1,12-diaminododecane, 1,2-cyclohexanediamine, 1,3-cyclohexanediamine, 1,4-cyclohexanediamine, 1,2-bis(aminomethyl)cyclohexane, 1,3 Examples include -bis(aminomethyl)cyclohexane, 1,4-bis(aminomethyl)cyclohexane, 4,4'-methylenebis(cyclohexylamine), 4,4'-methylenebis(2-methylcyclohexylamine), KH-511, ED-600, ED-900, ED-2003, EDR-148, EDR-176, D-200, D-400, D-2000, THF-100, THF-140, THF-170, RE-600, RE-900, RE-2000, RP-405, RP-409, RP-2005, RP-2009, RT-1000, HE-1000, HT-1100, HT-1700 (all trade names, manufactured by HUNTSMAN Co., Ltd.). Furthermore, these diamines may contain bonds such as -S-, -SO-, -SO2-, -NH-, -NCH3-, -N(CH2CH3)-, -N(CH2CH2CH3)-, -N(CH(CH3)2)-, -COO-, -CONH-, -OCONH-, and -NHCONH-.

[0100] Diamine residues containing a group selected from alkylene groups and alkylene ether groups are preferably present in an amount of 5 mol% or more, and more preferably 10 mol% or more, of the total diamine residues. Furthermore, they are preferably present in an amount of 40 mol% or less, and more preferably 30 mol% or less, of the total diamine residues. By setting the amount within the above range, it is possible to improve the developability with alkaline developers, improve the mechanical properties of the (A) resin and its cured film, particularly the elongation, and further improve the light transmittance at 450 nm after curing. In addition, high chemical resistance, high adhesion to metal surfaces, and resistance to constant temperature and humidity testing (HAST) can be obtained in the cured film of the resin composition by promoting ring closure during low-temperature heat treatment.

[0101] Diamine residues having an aliphatic polysiloxane structure may be copolymerized within a range that does not reduce heat resistance. Copolymerizing diamine residues having an aliphatic polysiloxane structure can improve adhesion to the substrate. Specifically, examples include copolymers of bis(3-aminopropyl)tetramethyldisiloxane, bis(p-aminophenyl)octamethylpentasiloxane, etc., in a concentration of 1 to 15 mol% of the total diamine residues. Copolymerizing within this range is preferable in terms of improving adhesion to substrates such as silicon wafers and not reducing solubility in alkaline solutions.

[0102] (A) By sealing the ends of the resin with a monoamine, acid anhydride, acid chloride, or monocarboxylic acid having an acidic group, a resin having an acidic group at the end of the main chain can be obtained. Known monoamines, acid anhydrides, acid chlorides, and monocarboxylic acids having an acidic group may be used, or multiple such monoamines may be used. The content of the end-capturing agent, such as the monoamine, acid anhydride, acid chloride, or monocarboxylic acid, is preferably 2 to 25 mol% relative to 100 mol% of the total sum of the acid and amine components constituting the resin (A).

[0103] (A) The resin preferably has a weight-average molecular weight of 10,000 or more and 100,000 or less. If the weight-average molecular weight is 10,000 or more, the mechanical properties of the cured film after curing can be improved. More preferably, the weight-average molecular weight is 20,000 or more. On the other hand, if the weight-average molecular weight is 100,000 or less, the developability with various developing solutions can be improved, and if the weight-average molecular weight is 50,000 or less, the developability with alkaline solutions can be improved, which is therefore preferable. The weight-average molecular weight (Mw) can be determined using GPC (gel permeation chromatography). For example, it can be measured using N-methyl-2-pyrrolidone (hereinafter sometimes abbreviated as NMP) as the developing solvent and then calculated in terms of polystyrene equivalent.

[0104] (A) The resin content is preferably 3 to 55% by mass, and more preferably 5 to 40% by mass, of the total components including the solvent. By setting it within this range, an appropriate viscosity can be achieved for spin coating or slit coating. Other materials that may be used include phenolic resins, polymers containing radical polymerizable monomers having alkali-soluble groups as monomer units, such as polyhydroxystyrene and acrylic, siloxane polymers, cyclic olefin polymers, and cardo resins. Known resins may be used, and they may be used individually or in combination.

[0105] Furthermore, in the present invention, it is preferable that the resin composition containing (A) resin contains (B) a photosensitive agent (hereinafter sometimes referred to as component (B)). (B) By including component (B), the resin composition can be given photosensitivity and a fine aperture pattern can be formed. Component (B) is a compound whose chemical structure changes in response to ultraviolet light, and examples include photoacid generators, photobase generators, and photopolymerization initiators. When a photoacid generator is used as component (B), acid is generated in the light-irradiated area of ​​the photosensitive resin composition, increasing the solubility of the light-irradiated area in the alkaline developer, thereby obtaining a positive-type pattern in which the light-irradiated area dissolves.

[0106] (B) When a photobase generator is included as component, a base is generated in the light-irradiated area of ​​the resin composition, and the solubility of the light-irradiated area in the alkaline developer decreases, so a negative-type pattern can be obtained in which the light-irradiated area becomes insoluble. (B) When a photopolymerization initiator is included as component, radicals are generated in the light-irradiated area of ​​the resin composition, radical polymerization proceeds, and the material becomes insoluble in alkaline developer, thereby forming a negative-type pattern. In addition, UV curing during exposure is accelerated, which can improve sensitivity. The resin composition containing (A) resin and (B) component preferably has positive photosensitivity from the viewpoint of microprocessability.

[0107] Among the components (B) described above, photoacid generators are preferred from the viewpoint of high sensitivity and microprocessability. Examples of photoacid generators include quinone diazide compounds, sulfonium salts, phosphonium salts, diazonium salts, and iodonium salts. Furthermore, sensitizers and other components may be included as needed.

[0108] As the quinone diazide compound, a compound having a phenolic hydroxyl group is preferably bonded to the sulfonic acid of naphthoquinone diazide via an ester. As the compound having a phenolic hydroxyl group used here, known compounds may be used, and examples of preferred compounds include those to which 4-naphthoquinone diazidesulfonic acid or 5-naphthoquinone diazidesulfonic acid has been introduced via an ester bond, but other compounds may also be used.

[0109] Furthermore, it is preferable that 50 mol% or more of the functional groups of the compound having a phenolic hydroxyl group are substituted with quinone diazide. By using a quinone diazide compound that is substituted by 50 mol% or more, the affinity of the quinone diazide compound for alkaline aqueous solutions decreases. As a result, the solubility of the unexposed resin composition in alkaline aqueous solutions is greatly reduced. Moreover, exposure changes the quinone diazide sulfonyl group to indene carboxylic acid, allowing for a high dissolution rate of the photosensitive resin composition in alkaline aqueous solutions in the exposed areas. In other words, as a result, the dissolution rate ratio between the exposed and unexposed areas of the composition can be increased, and a pattern with high resolution can be obtained.

[0110] By including such quinone diazide compounds, a positive-type photosensitive resin composition can be obtained that is sensitive to the i-line (365 nm), h-line (405 nm), g-line (436 nm) of a typical mercury lamp, as well as broadband light containing these wavelengths. Furthermore, component (B) may be included alone or in combination of two or more types, and a highly sensitive resin composition can be obtained.

[0111] Examples of quinone diazides include 5-naphthoquinone diazidosulfonyl groups, 4-naphthoquinone diazidosulfonyl groups, and those containing both 4-naphthoquinone diazidosulfonyl and 5-naphthoquinone diazidosulfonyl groups in the same molecule.

[0112] Examples of naphthoquinone diazidosulfonyl ester compounds include 5-naphthoquinone diazidosulfonyl ester compound (B-1) and 4-naphthoquinone diazidosulfonyl ester compound (B-2), but in the present invention, it is preferable to include compound (B-1). Compound (B-1) has absorption that extends to the g-line region of mercury lamps and is suitable for g-line exposure and full-wavelength exposure. In addition, it forms a cross-linked structure by reacting with resin (A) during curing, improving chemical resistance. Furthermore, it is preferable from the viewpoint of light transmittance after heat treatment because it discolors less after heat treatment compared to compound (B-2). The content ratio of compound (B-1) is preferably 55% by mass or more and 100% by mass or less relative to the total amount of photosensitive agent, which is compound (B-1) + compound (B-2). By using this content ratio, a cured film with high light transmittance can be obtained.

[0113] Quinone diazide compounds can be synthesized by known methods through the esterification reaction of a compound having a phenolic hydroxyl group with a quinone diazide sulfonic acid compound. The use of quinone diazide compounds improves resolution, sensitivity, and residual film ratio.

[0114] The molecular weight of component (B) is preferably 300 or more, more preferably 350 or more, preferably 3,000 or less, and more preferably 1,500 or less, from the viewpoint of the heat resistance, mechanical properties, and adhesiveness of the film obtained by heat treatment. (B) Among the components, sulfonium salts, phosphonium salts, and diazonium salts are preferred because they moderately stabilize the acidic components generated by exposure. Sulfonium salts are particularly preferred. The content of component (B) is preferably 0.1 parts by mass or more and 100 parts by mass or less per 100 parts by mass of resin (A). If the content of component (B) is 0.1 parts by mass or more and 100 parts by mass or less, photosensitivity can be imparted while maintaining the heat resistance, chemical resistance and mechanical properties of the film after heat treatment.

[0115] If component (B) contains a quinone diazide compound, the content of component (B) is more preferably 1 part by mass or more, and even more preferably 3 parts by mass or more, per 100 parts by mass of component (A). Furthermore, it is more preferably 100 parts by mass or less, and even more preferably 80 parts by mass or less. If the content is between 1 part by mass and 100 parts by mass or less, photosensitivity can be imparted while maintaining the heat resistance, chemical resistance, and mechanical properties of the film after heat treatment.

[0116] If component (B) contains a sulfonium salt, phosphonium salt, or diazonium salt, the content of component (B) is more preferably 0.1 parts by mass or more, even more preferably 1 part by mass or more, and particularly preferably 3 parts by mass or more, per 100 parts by mass of resin (A). Furthermore, 100 parts by mass or less is more preferable, 80 parts by mass or less is even preferable, and 50 parts by mass or less is particularly preferable. If the content is between 0.1 parts by mass and 100 parts by mass, photosensitivity can be imparted while maintaining the heat resistance, chemical resistance, and mechanical properties of the film after heat treatment.

[0117] (B) When a photobase generator is included as component, specific examples of photobase generators include amide compounds and ammonium salts. Examples of amide compounds include 2-nitrophenylmethyl-4-methacryloyloxypiperidine-1-carboxylate, 9-anthrylmethyl-N,N-dimethylcarbamate, 1-(anthraquinone-2yl)ethylimidazole carboxylate, and (E)-1-[3-(2-hydroxyphenyl)-2-propenoyl]piperidine.

[0118] Examples of ammonium salts include 1,2-diisopropyl-3-(bisdimethylamino)methylene)guanidium 2-(3-benzoylphenyl)propionate, (Z)-{[bis(dimethylamino)methylidene]amino}-N-cyclohexylamino)methaniminium tetrakis(3-fluorophenyl)borate, and 1,2-dicyclohexyl-4,4,5,5-tetramethylbiguanidium n-butyltriphenylborate.

[0119] When a photobase generator is included as component (B), the content of component (B) in the resin composition is preferably 0.1 parts by mass or more, more preferably 0.5 parts by mass or more, even more preferably 0.7 parts by mass or more, and particularly preferably 1 part by mass or more, per 100 parts by mass of resin (A). When the content is within the above range, the sensitivity during exposure can be improved. On the other hand, the content is preferably 25 parts by mass or less, more preferably 20 parts by mass or less, even more preferably 17 parts by mass or less, and particularly preferably 15 parts by mass or less. When the content is within the above range, the resolution after development can be improved.

[0120] (B) If the component contains a photopolymerization initiator, the photopolymerization initiator is preferably one of the following: benzyl ketal-based photopolymerization initiators, α-hydroxyketone-based photopolymerization initiators, α-aminoketone-based photopolymerization initiators, acylphosphine oxide-based photopolymerization initiators, oxime ester-based photopolymerization initiators, acridine-based photopolymerization initiators, benzophenone-based photopolymerization initiators, acetophenone-based photopolymerization initiators, aromatic ketoester-based photopolymerization initiators, or benzoic acid ester-based photopolymerization initiators, or titanocene-based photopolymerization initiators. Any known ones may be used, or multiple ones may be used. Among these, from the viewpoint of improving sensitivity during exposure, α-hydroxyketone-based photopolymerization initiators, α-aminoketone-based photopolymerization initiators, acylphosphine oxide-based photopolymerization initiators, oxime ester-based photopolymerization initiators, acridine-based photopolymerization initiators, or benzophenone-based photopolymerization initiators are more preferred, and α-aminoketone-based photopolymerization initiators, acylphosphine oxide-based photopolymerization initiators, and oxime ester-based photopolymerization initiators are even more preferred.

[0121] When a photopolymerization initiator is included as component (B), the content of component (B) in the resin composition is preferably 0.1 parts by mass or more, more preferably 0.5 parts by mass or more, even more preferably 0.7 parts by mass or more, and particularly preferably 1 part by mass or more, per 100 parts by mass of resin (A). When the content is within the above range, the sensitivity during exposure can be improved. On the other hand, the content is preferably 25 parts by mass or less, more preferably 20 parts by mass or less, even more preferably 17 parts by mass or less, and particularly preferably 15 parts by mass or less. When the content is within the above range, the resolution after development can be improved.

[0122] In the present invention, it is preferable that the resin composition containing (A) resin contains (C) a thermal crosslinking agent (hereinafter sometimes referred to as component (C)). A thermal crosslinking agent refers to a resin or compound that has at least two thermally reactive functional groups within its molecule. Examples of thermally reactive functional groups include compounds containing alkoxymethyl groups, methylol groups, and cyclic ether groups.

[0123] In this invention, the inclusion of component (C) is preferable because it improves chemical resistance. In the present invention, it is preferable that the cured film obtained by curing the resin composition containing (A) resin and components (B) and (C) has high transmittance. This suppresses the absorption of light emitted in all directions from the light-emitting element in the cured film obtained by curing the resin composition containing (A) resin and components (B) and (C), thereby increasing the light extraction efficiency and improving brightness.

[0124] To obtain such properties, it is preferable that component (C) itself has a high light transmittance at 450 nm and high heat resistance, and that it does not form many structures such as quinone structures, which are one of the colored structures, or that the light transmittance of the reaction product between component (B) and resin (A) is high, or that the light transmittance of the decomposition product of component (C) itself or the reaction product derived from the decomposition product is high.

[0125] The thermal crosslinking agent may contain one or more compounds selected from alkoxymethyl compounds and methylol compounds (hereinafter sometimes abbreviated as component (C-1)). Including component (C-1) strengthens the crosslinking and further improves the chemical resistance of the cured film to, for example, flux solutions. Specific examples of component (C-1) include the following methylol compounds, or alkoxymethyl compounds in which the hydrogen atoms of the methylol group are substituted with methyl groups or alkyl groups having 2 to 10 carbon atoms, but are not limited to the structures shown below.

[0126] [ka]

[0127] [ka]

[0128] Furthermore, the (C) component may contain one or more compounds having a cyclic ether group (hereinafter sometimes abbreviated as (C-2) component). Including (C-2) component allows the reaction to occur even at low temperatures of 160°C or below, and also strengthens the crosslinking, further improving the chemical resistance of the cured film.

[0129] (C-2)Specific examples of components include "Denacol" (registered trademark) EX-212L, Denacol EX-214L, Denacol EX-216L, Denacol EX-850L, Denacol EX-321L (all manufactured by Nagase ChemteX Co., Ltd.), GAN, GOT (both manufactured by Nippon Kayaku Co., Ltd.), "Epicort" (registered trademark) 828, Epicort 1002, Epicort 1750, Epicort 1007, YX4 000, YX4000H, YX8100-BH30, E1256, E4250, E4275 (all manufactured by Mitsubishi Chemical Corporation), “Epiclon” (registered trademark) 850-S, Epiclon HP-4032, Epiclon HP-7200, Epiclon HP-820, Epiclon HP-4700, Epiclon HP-4770, Epiclon HP4032 (all manufactured by Dainippon Ink and Chemicals, Inc.), TECHMORE Examples include VG3101L (manufactured by Printec Co., Ltd.), "Tepic" (registered trademark) S, Tepic G, Tepic P (all manufactured by Nissan Chemical Industries, Ltd.), Epotote YH-434L (manufactured by Toto Kasei Co., Ltd.), EPPN502H, NC-3000, NC-6000, XD-1000 (manufactured by Nippon Kayaku Co., Ltd.), Epiclon N695, HP7200 (all manufactured by Dainippon Ink and Chemicals, Inc.), "Etanacol" (registered trademark) EHO, Etanacol OXBP, Etanacol OXTP, Etanacol OXMA (all manufactured by Ube Industries, Ltd.), and oxetane phenol novolacs.

[0130] Among the (C-2) components, compounds having a triarylmethane structure or a cyclic ether group having a biphenyl structure are preferred, and compounds having a cyclic ether group having a biphenyl structure are more preferred. Specifically, examples include YX4000, YX4000H, YL6677 (all manufactured by Mitsubishi Chemical Corporation), TECHMORE VG3101L (manufactured by Printec Co., Ltd.), and NC-3000 (manufactured by Nippon Kayaku Co., Ltd.). Compounds having a cyclic ether group with a biphenyl structure can moderately lower the glass transition temperature of resin (A) and resin containing component (B), thereby imparting fluidity. This can alleviate stress concentration on the display device and reduce warping of the display device.

[0131] Furthermore, the (C) component may contain one or more compounds that include a structural unit represented by the following general formula (5) (hereinafter sometimes abbreviated as (C-3) component).

[0132] [ka]

[0133] In general formula (5), R 25 R is a divalent organic group having an alkylene group or alkylene ether group with 1 to 15 carbon atoms, such as a methylene group, ethylene group, propylene group, butylene group, ethylene oxide group, propylene oxide group, butylene oxide group, etc., and may be linear, branched, or cyclic. Furthermore, some of the substituents of the divalent organic group having an alkylene group or alkylene ether group with 1 to 15 carbon atoms may be cyclic ether groups, alkylsilyl groups, alkoxysilyl groups, aryl groups, aryl ether groups, carboxyl groups, carbonyl groups, allyl groups, vinyl groups, heterocyclic groups, or other substituents, or combinations thereof. 26 and R 27 Each of these independently represents either a hydrogen atom or a methyl group.

[0134] Since component (C-3) itself possesses both flexible alkylene groups and rigid aromatic groups, including component (C-3) allows for improved elongation and reduced stress in the resulting cured film while maintaining heat resistance. Examples of crosslinking groups included in component (C-3) include, but are not limited to, acrylic groups, methylol groups, alkoxymethyl groups, and cyclic ether groups. Among these, cyclic ether groups are preferred because they react with the hydroxyl groups of resin (A) to improve the heat resistance of the cured film and because the reaction can be carried out without dehydration.

[0135] Compounds containing the structural unit represented by general formula (5) include, but are not limited to, the following specific examples.

[0136] [ka]

[0137] During the ceremony o 1 is an integer from 1 to 20, o 2 is an integer from 1 to 5. In terms of achieving both heat resistance and improved elongation, o 1 is an integer between 3 and 7, o 2 It is preferable that this is an integer between 1 and 2. The above-mentioned component (C) may contain a combination of two or more types.

[0138] (C) The content of component (C) is preferably 5 parts by mass or more, and more preferably 10 parts by mass or more, per 100 parts by mass of resin (A), from the viewpoint of obtaining a cured film with high chemical resistance to flux solutions, for example. Furthermore, from the viewpoint of obtaining a cured film with high chemical resistance to flux solutions, for example, while maintaining the storage stability of the resin composition, and further suppressing peeling from metal wiring and cracking of the cured film after reliability testing of wiring to which the cured film is applied, the content is preferably 100 parts by mass or less, more preferably 90 parts by mass or less, and even more preferably 80 parts by mass or less, per 100 parts by mass of resin (A). (A) The resin composition containing the resin may optionally contain other components such as radical polymerizable compounds, antioxidants, solvents, compounds having phenolic hydroxyl groups, adhesion modifiers, bonding modifiers, and surfactants.

[0139] Next, a method for producing the resin composition of the present invention will be described. For example, the resin (A) can be mixed with, if necessary, components (B), (C), various radical polymerizable compounds, antioxidants, solvents, compounds having phenolic hydroxyl groups, adhesion improvers, bonding improvers, surfactants, etc., and dissolved to obtain the resin composition.

[0140] Methods for dissolution include known methods such as heating and stirring. The viscosity of the resin composition is preferably 2 to 5,000 mPa·s. By adjusting the solid content concentration so that the viscosity is 2 mPa·s or higher, it becomes easy to obtain the desired film thickness. On the other hand, if the viscosity is 5,000 mPa·s or lower, it becomes easy to obtain a resin film with high uniformity. A resin composition having such viscosity can be easily obtained, for example, by setting the solid content concentration to 5 to 60% by mass. Here, the solid content concentration refers to components other than the solvent.

[0141] The resulting resin composition is preferably filtered using a filtration filter to remove dirt and particles. Suitable materials for the filtration filter include polypropylene (PP), polyethylene (PE), nylon (NY), and polytetrafluoroethylene (PTFE), but polyethylene and nylon are preferred.

[0142] (A) When forming a cured film by curing a resin composition containing resin, a resin sheet may be formed from the resin composition containing resin (A), and then the resin sheet may be cured to form the film. A resin sheet refers to a sheet formed on a substrate using the above-mentioned resin composition. Specifically, it refers to a resin sheet obtained by coating a substrate with the resin composition and drying it. A film such as polyethylene terephthalate (PET) can be used as the substrate to which the resin composition is applied. When the resin sheet is bonded to a substrate such as a silicon wafer, if it is necessary to peel off the substrate, it is preferable to use a substrate coated with a release agent such as silicone resin on its surface, as this allows for easy separation of the resin sheet from the substrate. The display device of the present invention is suitably used in various LED displays and other display devices, as well as various in-vehicle lamps and the like. [Examples]

[0143] The present invention will be described below with reference to examples, but the present invention is not limited to these examples. The cured films made from the display devices and resin compositions used in the examples were evaluated by the following method.

[0144] <Method for evaluating the defect rate after reliability testing> For each of the three light-emitting devices described in the Examples and Comparative Examples below, 10 units were prepared. These devices were subjected to a reliability test using a HAST apparatus (HAST CHAMBER EHS-211MD manufactured by Tabai Espec Co., Ltd.) at a temperature of 85°C, 85% humidity, and for 2000 hours, with a voltage of 5V applied. After the test, a visual inspection of the devices was performed. The ratio of the number of light-emitting devices that did not light up among the 10 devices was evaluated as the defect rate.

[0145] <Method for evaluating the light extraction efficiency of a display device> The light extraction efficiency was measured using the display devices described in the following examples and comparative examples. A Hamamatsu Photonics C9920 external quantum efficiency analyzer was used for the measurements. The light extraction efficiency was evaluated as a relative value to the light extraction efficiency of the display device in Example 1, which was set to 1.00.

[0146] <Synthesis Example 1: Synthesis of Hydroxyl Group-Containing Diamine Compounds> 18.3 g (0.05 mol) of 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (manufactured by Central Glass Co., Ltd., hereinafter referred to as BAHF) was dissolved in 100 mL of acetone and 17.4 g (0.3 mol) of propylene oxide (manufactured by Tokyo Chemical Industry Co., Ltd.), and the mixture was cooled to -15°C. A solution of 20.4 g (0.11 mol) of 3-nitrobenzoyl chloride (manufactured by Tokyo Chemical Industry Co., Ltd.) dissolved in 100 mL of acetone was added dropwise. After the addition was complete, the mixture was stirred at -15°C for 4 hours, and then returned to room temperature. The precipitated white solid was filtered off and vacuum-dried at 50°C. 30 g of the obtained white solid was placed in a 300 mL stainless steel autoclave and dispersed in 250 mL of methyl cellosolve. 2 g of 5% palladium-carbon (manufactured by Wako Pure Chemical Industries, Ltd.) was added. Hydrogen was introduced using a balloon, and the reduction reaction was carried out at room temperature. After approximately 2 hours, the reaction was terminated when it was confirmed that the balloon no longer deflated. After the reaction was complete, the palladium compound catalyst was removed by filtration, and the mixture was concentrated using a rotary evaporator to obtain a hydroxyl group-containing diamine compound represented by the following formula.

[0147] [ka]

[0148] <Synthesis Example 2: Synthesis of Polybenzoxazole Precursor (a-1)> Under a stream of dry nitrogen, 1.5 g (0.0075 mol) of 4,4'-diaminodiphenyl ether (hereinafter referred to as 4,4'-DAE), 12.8 g (0.035 mol) of BAHF, and 5.0 g (0.0050 mol) of RT-1000 (manufactured by HUNTSMAN Co., Ltd.) were dissolved in 100 g of NMP. To this, 7.4 g (0.023 mol) of diimidazole dodecanoate and 8.1 g (0.023 mol) of 1,1'-(4,4'-oxybenzoyl)diimidazole (hereinafter referred to as PBOM) were added along with 25 g of NMP, and the mixture was reacted at 85°C for 3 hours. Next, 0.6 g (0.0025 mol) of 1,3-bis(3-aminopropyl)tetramethyldisiloxane (hereinafter referred to as SiDA), 0.8 g (0.0025 mol) of 4,4'-oxydiphthalic anhydride (hereinafter referred to as ODPA), and 0.8 g (0.0050 mol) of 5-norbornene-2,3-dicarboxylic acid anhydride (hereinafter referred to as Na) were added together with 25 g of NMP and reacted at 85°C for 1 hour. After the reaction was complete, the mixture was cooled to room temperature, and 13.2 g (0.25 mol) of acetic acid was added together with 25 g of NMP and stirred at room temperature for 1 hour. After stirring, the solution was added to 1.5 L of water to obtain a white precipitate. This precipitate was collected by filtration, washed three times with water, and then dried in a forced-air dryer at 50°C for 3 days to obtain a powder of polybenzoxazole precursor (a-1).

[0149] <Synthesis Example 3: Synthesis of Polybenzoxazole Precursor (a-2)> Under a stream of dry nitrogen, 27.5 g (0.075 mol) of BAHF was dissolved in 257 g of NMP. 17.2 g (0.048 mol) of PBOM was added along with 20 g of NMP, and the mixture was reacted at 85°C for 3 hours. Next, 20.0 g (0.02 mol) of RT-1000, 1.2 g (0.005 mol) of SiDA, and 14.3 g (0.04 mol) of PBOM were added along with 50 g of NMP, and the mixture was reacted at 85°C for 1 hour. Furthermore, as a terminal encapsulant, 3.9 g (0.024 mol) of NA was added along with 10 g of NMP, and the mixture was reacted at 85°C for 30 minutes. After the reaction was complete, the mixture was cooled to room temperature, and 52.8 g (0.50 mol) of acetic acid was added along with 87 g of NMP, and the mixture was stirred at room temperature for 1 hour. After stirring, the solution was added to 3 L of water to obtain a white precipitate. This precipitate was collected by filtration, washed three times with water, and then dried in a forced-air dryer at 50°C for three days to obtain a powder of polybenzoxazole precursor (a-2).

[0150] <Synthesis Example 4: Synthesis of Polyimide Precursor (a-3)> Under a stream of dry nitrogen, 51.9 g (0.086 mol) of the hydroxyl group-containing diamine obtained in Synthesis Example 1 and 1.0 g (0.004 mol) of SiDA were dissolved in 200 g of NMP. 31.0 g (0.10 mol) of ODPA was added, and the mixture was stirred at 40°C for 2 hours. Then, 1.1 g (0.01 mol) of 3-aminophenol (manufactured by Tokyo Chemical Industry Co., Ltd.) was added along with 10 g of NMP as a terminal encapsulant, and the mixture was reacted at 40°C for 1 hour. Subsequently, a solution of 7.1 g (0.06 mol) of dimethylformamide dimethylacetal (manufactured by Mitsubishi Rayon Co., Ltd., hereinafter referred to as DFA) diluted with 5 g of NMP was added dropwise. After the dropwise addition, stirring was continued at 40°C for 2 hours. After stirring was complete, the solution was added to 2 L of water, and the polymer solid precipitate was collected by filtration. The polymer solid was then washed three times with 2 liters of water, and dried in a vacuum dryer at 50°C for 72 hours to obtain polyimide precursor (a-3).

[0151] <Synthesis Example 5: Synthesis of Polyimide Precursor (a-4)> Under a stream of dry nitrogen, 41.1 g (0.068 mol) of the hydroxyl group-containing diamine obtained in Synthesis Example 1, 18.0 g (0.018 mol) of RT-1000, and 1.0 g (0.004 mol) of SiDA were dissolved in 200 g of NMP. 31.0 g (0.10 mol) of ODPA was added, and the mixture was stirred at 40°C for 2 hours. Then, 1.1 g (0.01 mol) of 3-aminophenol was added along with 10 g of NMP as a terminal encapsulant, and the mixture was reacted at 40°C for 1 hour. Subsequently, a solution of 6.0 g (0.05 mol) of DFA diluted with 5 g of NMP was added dropwise. After addition, stirring was continued at 40°C for 2 hours. After stirring, the solution was added to 2 L of water, and the polymer solid precipitate was collected by filtration. The mixture was then washed three times with 2 L of water, and the collected polymer solid was dried in a vacuum dryer at 50°C for 72 hours to obtain polyimide precursor (a-4).

[0152] <Synthesis Example 6: Synthesis of Polyimide (a-5)> Under a stream of dry nitrogen, 29.3 g (0.08 mol) of BAHF, 1.2 g (0.005 mol) of SiDA, and 3.3 g (0.03 mol) of 3-aminophenol as an end-cap encapsulant were dissolved in 80 g of NMP. 31.2 g (0.1 mol) of ODPA was added to this mixture along with 20 g of NMP, and the mixture was reacted at 60°C for 1 hour, followed by stirring at 180°C for 4 hours. After stirring, the solution was added to 3 L of water to obtain a white precipitate. This precipitate was collected by filtration, washed three times with water, and then dried in a vacuum dryer at 80°C for 20 hours to obtain polyimide (a-5) powder.

[0153] <Synthesis Example 7: Synthesis of Cardo resin (a-6)> Under a stream of dry nitrogen, 198.53 g of a 50% PGMEA solution of an isostoichiometric reaction product of bisphenol fluorene type epoxy resin and acrylic acid (manufactured by Nippon Steel Chemical Co., Ltd., product name "ASF-400" solution), 39.54 g (0.12 mol) of benzophenone tetracarboxylic dianhydride, 8.13 g (0.08 mol) of succinic anhydride, 48.12 g of PGMEA, and 0.45 g of triphenylphosphine were charged into a four-necked flask equipped with a reflux condenser. The mixture was heated to 120-125°C and stirred for 1 hour, then heated and stirred at 75-80°C for 6 hours. After that, 8.6 g of glycidyl methacrylate was added, and the mixture was stirred at 80°C for 8 hours to obtain a resin (a-6) having a skeletal structure in which two cyclic structures are bonded to a quaternary carbon atom constituting a cyclic structure.

[0154] <Synthesis Example 8: Synthesis of Polyimide Precursor (a-7)> Under a stream of dry nitrogen, 3.2 g (0.03 mol) of 1,4-paraphenylenediamine and 12.0 g (0.06 mol) of 4,4'-DAE were dissolved in 200 g of NMP. 31.0 g (0.10 mol) of ODPA was added, and the mixture was stirred at 40°C for 2 hours. Then, 1.1 g (0.01 mol) of 3-aminophenol (manufactured by Tokyo Chemical Industry Co., Ltd.) was added along with 10 g of NMP as a terminal encapsulant, and the mixture was reacted at 40°C for 1 hour. Subsequently, a solution of 7.1 g (0.06 mol) of DFA diluted with 5 g of NMP was added dropwise. After addition, stirring was continued at 40°C for 2 hours. After stirring, the solution was added to 2 L of water, and the polymer solid precipitate was collected by filtration. The mixture was then washed three times with 2 L of water, and the collected polymer solid was dried in a vacuum dryer at 50°C for 72 hours to obtain polyimide precursor (a-7).

[0155] <Synthesis Example 9: Synthesis of Polyimide Precursor (a-8)> 155.1 g (0.50 mol) of ODPA was placed in a 2-liter separable flask, and 134.0 g (1.00 mol) of 2-hydroxyethyl methacrylate (HEMA) and 400 g of γ-butyrolactone were added. While stirring at room temperature, 79.1 g of pyridine was added to obtain the reaction mixture. After the exothermic reaction was complete, the mixture was allowed to cool to room temperature and then left to stand for another 16 hours. Next, under ice cooling, a solution of 206.3 g (1.00 mol) of dicyclohexylcarbodiimide (DCC) dissolved in 180 g of γ-butyrolactone was added to the reaction mixture over 40 minutes with stirring. Subsequently, a suspension of 16.2 g (0.15 mol) of 1,4-paraphenylenediamine and 60.1 g (0.30 mol) of 4,4'-DAE suspended in 350 g of γ-butyrolactone was added over 60 minutes with stirring. After further stirring at room temperature for 2 hours, 30 ml of ethyl alcohol was added and the mixture was stirred for 1 hour. Then, 400 g of γ-butyrolactone was added. The precipitate formed in the reaction mixture was removed by filtration to obtain the reaction solution. The reaction mixture was added to 3 L of water to obtain a white precipitate. This precipitate was collected by filtration, washed twice with water, then washed once with isopropanol, and dried in a vacuum dryer at 50°C for 72 hours to obtain polyimide precursor (a-8).

[0156] <Synthesis Example 10: Synthesis of Photosensitive Agent (Quinone Diazide Compound) (b-1)> Under a stream of dry nitrogen, 21.2 g (0.05 mol) of 4,4'-[1-[4-[1-(4-hydroxyphenyl-1)-1-methylethyl]phenyl]ethylidene]bisphenol (manufactured by Honshu Chemical Industry Co., Ltd., hereinafter referred to as TrisP-PA) and 26.8 g (0.10 mol) of 5-naphthoquinone diazidosulfonic acid chloride (manufactured by Toyo Gosei Co., Ltd., NAC-5) were dissolved in 450 g of γ-butyrolactone at room temperature. To this, 12.7 g of triethylamine mixed with 50 g of γ-butyrolactone was added dropwise, ensuring that the temperature in the system did not exceed 35°C. After addition, the mixture was stirred at 40°C for 2 hours. The triethylamine salt was filtered, and the filtrate was added to water. The precipitated material was then collected by filtration and washed with 1 L of 1% hydrochloric acid water. After that, it was washed twice more with 2 L of water. This precipitate was dried in a vacuum dryer to obtain a quinone diazide compound (b-1) represented by the following formula.

[0157] [ka]

[0158] <Synthesis Example 11: Synthesis of Photosensitive Agent (Quinone Diazide Compound) (b-2)> Under a stream of dry nitrogen, 1.2 g (0.05 mol) of TrisP-PA and 26.8 g (0.10 mol) of 4-naphthoquinone diazidosulfonic acid chloride (manufactured by Toyo Gosei Co., Ltd., NAC-5) were dissolved in 450 g of γ-butyrolactone at room temperature. To this, 12.7 g of triethylamine mixed with 50 g of γ-butyrolactone was added dropwise, ensuring that the temperature in the system did not exceed 35°C. After addition, the mixture was stirred at 40°C for 2 hours. The triethylamine salt was filtered, and the filtrate was added to water. The precipitated material was then collected by filtration and washed with 1 L of 1% hydrochloric acid water. After that, it was washed twice more with 2 L of water. The precipitate was dried in a vacuum dryer to obtain the quinone diazide compound (b-2) represented by the following formula.

[0159] [ka]

[0160] <Synthesis Example 12: Synthesis of Acrylic Resin (a-10)> 150 g of dimethylaminomethanol (hereinafter, "DMEA"; manufactured by Tokyo Chemical Industry Co., Ltd.) was charged into a reaction vessel under a nitrogen atmosphere, and the temperature was raised to 80°C using an oil bath. A mixture consisting of 20 g of ethyl acrylate (hereinafter, "EA"), 40 g of 2-ethylhexyl methacrylate (hereinafter, "2-EHMA"), 20 g of styrene (hereinafter, "St"), 15 g of acrylic acid (hereinafter, "AA"), 0.8 g of 2,2'-azobisisobutyronitrile and 10 g of DMEA was added dropwise over 1 hour. After the addition was complete, the polymerization reaction was carried out for another 6 hours at 80°C under a nitrogen atmosphere. Subsequently, 1 g of hydroquinone monomethyl ether was added to stop the polymerization reaction. Subsequently, a mixture consisting of 5 g of glycidyl methacrylate (hereinafter, "GMA"), 1 g of triethylbenzylammonium chloride and 10 g of DMEA was added dropwise over 0.5 hours. After the dropwise addition was complete, the addition reaction was carried out for another 2 hours at 80°C under a nitrogen atmosphere. The resulting reaction solution was purified with methanol to remove unreacted impurities, and then vacuum-dried for 24 hours to obtain acrylic resin (a-10) with copolymerization ratio (by mass): EA / 2-EHMA / St / GMA / AA = 20 / 40 / 20 / 5 / 15. The acid value of the obtained resin (a-10) was 103 mgKOH / g.

[0161] <Synthesis Example 13: Synthesis of Acrylic Resin (a-11)> A methyl methacrylate / methacrylic acid / styrene copolymer (weight ratio 30 / 40 / 30) was synthesized by the method described in Example 1 of Japanese Patent No. 3120476. 100 parts by weight of the obtained copolymer was mixed with 40 parts by weight of glycidyl methacrylate, re-precipitation with purified water, filtration, and drying to obtain an acrylic resin (a-11) with a weight-average molecular weight of 15,000 and an acid value of 110 mgKOH / g.

[0162] <Preparation Example 1: Preparation of Photosensitive Conductive Paste 1> In a 100 mL clean bottle, 10.0 g of resin (a-10) was added as the resin, 0.50 g of "IRGACURE®" OXE-01 (manufactured by Ciba Japan Co., Ltd.) as a photopolymerization initiator, 5.0 g of DMEA as a solvent, and 2.0 g of "Light Acrylate®" BP-4EA (manufactured by Kyoeisha Chemical Co., Ltd.) as a compound having an unsaturated double bond. The mixture was then combined using a rotation-revolution vacuum mixer "Awatori Rentaro ARE-310" (manufactured by Shinky Co., Ltd.) to obtain 17.5 g of resin solution (solid content 71.4% by mass). The obtained 17.50 g of resin solution was mixed with 44.02 g of silver particles with an average particle size of 1.0 μm and 0.28 g of carbon black with an average particle size of 0.05 μm. The mixture was kneaded using a three-roller mill "EXAKT M-50" (manufactured by EXAKT Corporation) to obtain 61.8 g of photosensitive conductive paste 1. The average particle sizes of the silver particles and carbon black were determined by observing each particle using an electron microscope (SEM) at a magnification of 10,000x and a field of view of 12 μm. The maximum width of 40 randomly selected primary silver particles and carbon black particles was measured, and the number average of these measurements was calculated.

[0163] <Preparation Example 2: Preparation of Colorant Dispersion (DC-1)> As a coloring agent, zirconia compound particles Zr-1 (manufactured by Nisshin Engineering Co., Ltd.), produced by the thermal plasma method, were used. 200g of Zr-1, 114g of a 35 wt% solution of acrylic polymer (P-1) propylene glycol monomethyl ether acetate (PGMEA), 25g of "DISPERBYK®" LPN-21116, which has a tertiary amino group and a quaternary ammonium salt as a polymer dispersant, and 661g of PGMEA were placed in a tank and stirred for 20 minutes with a homomixer to obtain a preliminary dispersion. The obtained preliminary dispersion was supplied to an Ultra Apex Mill disperser manufactured by Kotobuki Kogyo Co., Ltd., which is equipped with a centrifugal separator filled with 75 vol% of 0.05 mmφ zirconia beads, and dispersed at a rotation speed of 8 m / s for 3 hours to obtain a coloring agent dispersion (DC-1) with a solid content concentration of 25 wt% and a coloring agent / resin (weight ratio) of 80 / 20.

[0164] <Preparation Example 3: Preparation of Photosensitive Colored Resin Composition 1> To 283.1 g of a colorant dispersion (DC-1), 184.4 g of a 35 wt% PGMEA solution of resin (a-11), 50.1 g of dipentaerythritol hexaacrylate (manufactured by Nippon Kayaku Co., Ltd.) as a polyfunctional monomer, 7.5 g of "Irgacure®" 907 (manufactured by BASF) and 3.8 g of "KAYACURE®" DETX-S (manufactured by Nippon Kayaku Co., Ltd.) as photopolymerization initiators, 12.0 g of KBM5103 (manufactured by Shin-Etsu Chemical Co., Ltd.) as an adhesion improver, and a solution of 3 g of a 10 wt% PGMEA solution of the silicone-based surfactant "BYK®" 333 (manufactured by Bic Chemie) dissolved in 456.1 g of PGMEA was added to obtain a photosensitive colored resin composition 1 with a total solids content of 20 wt% and a colorant / resin (weight ratio) of 30 / 70.

[0165] <Preparation Example 4: Manufacturing of Colorant Dispersion (DC-2)> According to the method described in Japanese Patent Publication No. 2008-517330, the surface elemental composition of carbon black (CB-Bk1) modified with sulfonic acid groups was (C: 88%, O: 7%, Na: 3%, S: 2%), and in terms of the state of the S element, 90% of the S2p peak components were attributed to CS and SS, and 10% were attributed to SO and SOx, with a BET value of 54 m2 / g. 200g of carbon black CB-Bk1, 94g of a 40% by mass solution of propylene glycol monomethyl ether acetate (acrylic resin a-11), 31g of a 40% by mass solution of Bic Chemie Japan LPN21116 as a polymer dispersant, and 675g of propylene glycol monomethyl ether acetate were placed in a tank and stirred for 1 hour using a homomixer (manufactured by Tokushu Kikai) to obtain a preliminary dispersion. The preliminary dispersion was then supplied to an ultra-apex mill (manufactured by Kotobuki Kogyo) equipped with a centrifugal separator filled with 70% 0.05mmφ zirconia beads (YTZ balls manufactured by Nikkatoh), and dispersed at a rotation speed of 8 m / s for 2 hours to obtain a colored dispersion DC-2 with a solid content concentration of 25% by mass and a pigment / resin (mass ratio) of 80 / 20.

[0166] <Preparation Example 5: Preparation of Photosensitive Colored Resin Composition 2> To 534.8 g of a colorant dispersion (DC-2), 122.1 g of a 40% by mass solution of resin (a-11) in PGMEA, 47.3 g of dipentaerythritol hexaacrylate (manufactured by Nippon Kayaku Co., Ltd.) as a polyfunctional monomer, 11.8 g of "ADEKA Cruise" NCI-831 (manufactured by ADEKA Corporation) as a photopolymerization initiator, 12.0 g of KBM5103 (manufactured by Shin-Etsu Chemical Co., Ltd.) as an adhesion improver, and 4 g of a 10% by mass solution of the silicone-based surfactant "BYK®" 333 (manufactured by BYK Chemie) dissolved in 194.0 g of PGMEA were added to obtain a photosensitive colored resin composition 2 with a total solids content of 25% by mass and a colorant / resin (weight ratio) of 45 / 55.

[0167] The components (a-9), (b-3), (c-1), (c-2), other components, and solvents used in the examples and comparative examples are shown below. (a-9) Phenolic resin MEHC-7851 (manufactured by Meiwa Kasei Co., Ltd.) (c-1) HMOM-TPHAP (manufactured by Honshu Chemical Industry Co., Ltd.) (c-2) YX4000H (manufactured by Mitsubishi Chemical Corporation)

[0168] [ka]

[0169] (b-3): Photopolymerization initiator NCI-831 (manufactured by ADEKA Corporation) Other ingredients: (f-1): Dipentaerythritol hexaacrylate (DPHA, manufactured by Kyoeisha Chemical Co., Ltd.) (f-2): 2,4-Diethylthioxanthone (KAYACURE DETX-S, manufactured by Nippon Kayaku Co., Ltd.) (f-3): 2,5-Bis(1,1,3,3-tetramethylbutyl)hydroquinone (DOHQ, manufactured by Wako Pure Chemical Industries, Ltd.) solvent: GBL: Gamma-butyrolactone PGMEA: Propylene glycol monomethyl ether acetate.

[0170] Table 1 shows the formulation of the resin composition consisting of (A) resin, (B) photosensitive agent, and (C) thermal crosslinking agent. Table 2-1 shows the resin composition, inorganic insulating film, total thickness of the insulating film (μm), number of layers of cured film, number of layers of inorganic insulating film, layers of inorganic insulating film, thickness of inorganic insulating film (μm), α / β, β / γ, and defect rate evaluation level after reliability testing of the display device used in the example. Table 2-2 also shows the resin composition used in the example, the shape and length of the aperture pattern processed with the cured film, and the light extraction efficiency from the display device.

[0171] [Table 1]

[0172] [Table 2-1]

[0173] [Table 2-2]

[0174] For evaluation level (1), a failure rate of 0.25 or less for each of the 10 display devices was assigned level A, a failure rate greater than 0.25 but 0.30 or less was assigned level B, a failure rate of 0.35 or less was assigned level C, a failure rate of 0.40 or less was assigned level D, a failure rate greater than 0.40 but 0.45 or less was assigned level E, and a failure rate greater than 0.45 was assigned level F. Levels A to E are acceptable for practical use, while level F is a level with a high failure rate for display devices that poses problems for practical use.

[0175] Regarding evaluation level (2), devices with a light extraction efficiency of 1.20 or higher compared to Example 1 were classified as Level A, devices with a light extraction efficiency of 1.10 or higher compared to Example 1 were classified as Level B, devices with a light extraction efficiency of 1.00 or higher compared to Example 1 were classified as Level C, and devices with a light extraction efficiency of less than 1.00 compared to Example 1 were classified as Level D.

[0176] (Example 1) (Configuration shown in Figure 13) An embodiment of the present invention's display device will be described with reference to the cross-sectional view of the manufacturing process shown in Figure 13. As shown in Figure 13a, a glass substrate was used for the support substrate 26. A temporary bonding material made of polyimide was placed on the glass substrate, and the light-emitting element 2, which is a light-emitting element, was placed on the support substrate 26 (step (D1)). The thickness of the light-emitting element 2 was 5 μm, with one side length of 30 μm and the other side length of 50 μm.

[0177] Next, as shown in Figure 13b, the resin composition 1 described in Table 1 was applied to the support substrate 26 and the light-emitting element 2 to a thickness of 7 μm after heat treatment to form a resin film 21 (step (D2)). Next, as shown in Figure 13c, the resin film 21 was irradiated with i-line (365 nm) light through a mask having a desired pattern. The exposed resin film 21 was developed using a 2.38 mass% aqueous solution of tetramethylammonium (TMAH) to form a pattern of multiple aperture patterns 12 penetrating in the thickness direction of the resin film 21 (step (D3)). The shape of the aperture patterns was circular, and the longest length of the bottom surface in the smallest region of the aperture pattern was 2 μm in diameter.

[0178] Next, the resin film 21 was heat-treated at 110°C for 30 minutes in an atmosphere with an oxygen concentration of 100 ppm or less, and then further heat-treated at 230°C for 60 minutes to cure it, thereby forming a cured film 3 with a thickness of 7 μm (step (D4)). The resin film 21 then cured to become the cured film 3. Next, as shown in Figure 13d, a titanium barrier metal was sputtered onto the cured film 3, and then a copper seed layer was formed on top of that by sputtering. After that, a photoresist layer was formed, and then metal wiring 4 made of copper, which is electrically connected to the light-emitting element 2, was formed on the opening pattern 12 of the cured film 3 and on a part of the surface of the cured film 3 by plating. After that, the photoresist, seed layer, and barrier metal were removed (step (D5)). The thickness of the metal wiring 4a formed on a part of the surface of the cured film 3 was 5 μm.

[0179] Next, as shown in Figure 13e, steps (D2), (D3), (D4), and (D5) were repeated to form two layers of cured film 3, resulting in a thickness of 7 μm after heat treatment. Next, as shown in Figure 13f, silicon oxide (SiO2) was formed on the cured film 3 and the metal wiring 4 as an inorganic insulating film to a thickness of 0.4 μm by the CVD method (corresponding to step (D6)).

[0180] Subsequently, as shown in Figure 13g, step (D2) was performed to achieve a thickness of 10 μm after heat treatment, followed by steps (D3), (D4), (D5), and a step (D7) to remove the inorganic insulating film by etching, thereby forming a total of three layers of cured film 3. As a result, the total thickness of the insulating layer was 24.4 μm. Subsequently, in Figure 13h, barrier metal 9 was formed on the opening pattern 12 of the cured film 3 by sputtering to form solder bumps 10. Then, as shown in Figure 13i, the solder was reflowed at 250°C for 1 minute to electrically connect to the light-emitting element driving substrate 7 having a driver IC, which is a driving element 8d, via the solder bumps 10. After that, the support substrate 26 was peeled off and the opposing substrate 5 was bonded together using an adhesive to obtain a display device 1 having multiple light-emitting elements 2.

[0181] (Example 2) Display device 2 was obtained by following the same procedure as in Example 1, except that the resin composition 1 of Example 1 was replaced with a resin sheet made of resin composition 2, and a resin film 21 was formed by lamination.

[0182] (Examples 3-14) Display devices 3 to 14 were obtained by following the same procedure as in Example 1, except that resin composition 1 in Example 1 was replaced with resin compositions 3 to 14.

[0183] (Example 15) As shown in Figure 14a, a partition wall 16 was formed on the support substrate 26 (corresponding to step D8). Next, as shown in Figure 14b, a light-emitting element 2 was formed between the partition walls 16 (corresponding to step D1). Otherwise, the display device 15 was manufactured using the same process as in Example 4. The thickness of the light-emitting element 2 was 5 μm, and the thickness of the partition wall 16 was 7 μm. The partition wall 16 was made of acrylic resin containing a known white pigment.

[0184] (Example 16) As shown in Figure 15d, following the process (D4) in which the cured film shown in Figure 13c was formed in the same manner as in Example 4, aluminum was formed to a thickness of 0.2 μm by sputtering at a predetermined position, avoiding the metal wiring 4 that would be formed later, to provide a reflective film 15 (step (D9)). Otherwise, the display device 16 was manufactured using the same process as in Example 4.

[0185] (Example 17) As shown in Figure 16a, a light-emitting element 2, which is a light-emitting element, was placed on the support substrate 26 (step (D1)). Next, as shown in Figure 16b, silicon oxide (SiO2) was formed as an inorganic insulating film to a thickness of 0.4 μm by the CVD method (corresponding to step (D6)). As shown in Figure 16c, step (D2) was performed to make the film 7 μm thick after heat treatment, and then steps (D3), (D4), (D5), and a step to remove the inorganic insulating film by etching (step (D7)) were performed to form the first layer of cured film 3. Subsequently, steps (D2), (D3), (D4), and (D5) were repeated to form three layers of cured film 3. The second layer of cured film 3 was formed to a thickness of 7 μm, and the third layer of cured film 3 was formed to a thickness of 10 μm. Otherwise, the display device 17 was manufactured using the same process as in Example 4.

[0186] (Example 18) As shown in FIG. 17d, after the step (D4) of forming the cured film shown in FIG. 13c in the same manner as in Example 4, silicon oxide (SiO2) was formed as an inorganic insulating film by CVD to a thickness of 0.4 μm (corresponding to step (D6)). As shown in FIG. 17e, step (D2) was performed to a thickness of 7 μm after the heat treatment, and steps (D3), (D4), (D5), and the step of removing the inorganic insulating film by etching (step (D7)) were performed to form the second cured film 3. Thereafter, steps (D2), (D3), (D4), and (D5) were performed to form three layers of the cured film 3. The third cured film 3 was formed to a thickness of 10 μm. Otherwise, the display device 18 was manufactured in the same steps as in Example 4.

[0187] (Example 第十九) As shown in FIG. 18f, after the step (D4) of forming the cured film shown in FIG. 13e in the same manner as in Example 4, step (D2) was performed to a thickness of 7 μm after the heat treatment, and steps (D3), (D4), and (D5) were performed to form the third cured film 3. Thereafter, silicon oxide (SiO2) was formed as an inorganic insulating film by CVD to a thickness of 0.4 μm (corresponding to step (D6)). For connection to the subsequently formed barrier metal 9 and solder bump process 10, the step of removing the inorganic insulating film by etching (step (D7)) was performed, and otherwise, the display device 19 was manufactured in the same steps as in Example

[0188] (Example 第二十) The display device 20 was obtained in the same manner as in Example 4, except that the thickness of the inorganic insulating film in Example 4 was changed to 2.0 μm.

[0189] (Example 第二十一) The display device 21 was obtained in the same manner as in Example 4, except that the thickness of the inorganic insulating film in Example 4 was changed to 1.0 μm.

[0190] (Example 第二十二) The display device 22 was obtained in the same manner as in Example 4, except that the thickness of the inorganic insulating film in Example 4 was changed to 0.1 μm.

[0191] (Example 第二十三) It should be noted that in the translation, for the sake of clarity, the Chinese characters in the original text that seem to be used as example numbers are retained in Chinese in the translation, and it is recommended to check and correct them according to the actual situation. Also, the specific meaning of some technical terms may need to be further determined in combination with relevant technical knowledge. The thickness of the inorganic insulating film in Example 4 was changed to 1.0 μm, the thickness of the second cured film 3 was changed to 15 μm, and the thickness of the third cured film 3 was changed to 15 μm. Otherwise, the same method as in Example 4 was used to obtain the display device 23.

[0192] (Example 24) The thickness of the inorganic insulating film in Example 4 was changed to 1.0 μm, the thickness of the second cured film 3 was changed to 7 μm, and the thickness of the third cured film 3 was changed to 15 μm. Otherwise, the same method as in Example 4 was used to obtain the display device 24.

[0193] (Example 25) The thickness of the inorganic insulating film in Example 4 was changed to 1.0 μm, the thickness of the second cured film 3 was changed to 15 μm, and the thickness of the third cured film 3 was changed to 7 μm. Otherwise, the same method as in Example 4 was used to obtain the display device 25.

[0194] (Example 26) The resin composition 1 in Example 1 was changed to the resin composition 4. As shown in FIG. 13i, on the side surface of the light-emitting element driving substrate, grooves were formed by laser processing, and titanium and copper were formed in that order by sputtering. Then, copper was formed by electroplating to obtain the metal wiring 4c (step D10). Otherwise, the same method as in Example 1 was used to obtain the display device 28.

[0195] (Example 27) An example of the display device of the present invention will be described according to the manufacturing process cross-sectional view of FIG. 19. First, as shown in FIG. 19a, an electrode pad 27 made of copper was disposed on the support substrate 26 (corresponding to step (E1)). The thickness of the electrode pad was 0.2 μm. Next, as shown in FIG. 19b, the resin composition 4 shown in Table 1 was applied on the support substrate 26 and on the metal pad 27 so as to have a thickness of 10 μm after heat treatment to form a resin film 21 (corresponding to step (E2)). Next, as shown in FIG. 19c, a plurality of opening patterns 12 were formed in the resin film 21 under the same conditions as in the photolithography process shown in Example 1 (corresponding to step (E3)). Next, the resin film 21 was cured under the same conditions as in Example 1 to form a cured film 3 with a thickness of 10 μm (corresponding to step (E4)).

[0196] Next, in Figure 19c, in order to improve the adhesion between the hardened film 3 and the metal wiring 4, a barrier metal such as titanium was sputtered onto the hardened film 3, and then a copper seed (seed layer) was formed on top of that using the sputtering method. Next, as shown in Figure 19d, after forming a photoresist layer, metal wiring 4 made of copper was formed in the opening pattern 12 of the cured film 3 by a plating method (corresponding to step (E5)). After that, the photoresist, seed layer, and barrier metal were removed. Next, as shown in Figure 19e, silicon oxide (SiO2) was formed as an inorganic insulating film on the cured film 3 and the metal wiring 4 by CVD to a thickness of 0.4 μm (corresponding to step (E6)). Subsequently, as shown in Figure 19f, a step (step (E7)) was performed to remove the inorganic insulating film by etching.

[0197] Subsequently, steps (E2), (E3), (E4), and (E5) were repeated twice to form three layers of cured film 3 containing metal wiring 4, as shown in Figure 19h. As a result, the total thickness of the insulating layer was 24.4 μm. Next, as shown in Figure 19i, the light-emitting element 2 was placed on the cured film 3 so as to maintain an electrical connection with the metal wiring 4 (corresponding to step (E8)). The thickness of the light-emitting element 2 was 7 μm. Next, as shown in Figure 19j, a resin film 21 made of resin composition 4 was formed on the cured film 3 and the light-emitting element 2, and cured by heat treatment to form the cured film 3. In this case, the cured film 3 was formed by heat treatment at 110°C for 30 minutes in an atmosphere with an oxygen concentration of 100 ppm or less, followed by further heat treatment at 230°C for 60 minutes. Next, as shown in Figure 19k, the support substrate 26 was peeled off, and the light-emitting element driving substrate 7, which has a driver IC that is a driving element 8, was electrically connected via the solder bumps 10.

[0198] Furthermore, as shown in Figure 19k, grooves were formed on the side surface of the light-emitting element driving substrate by laser processing, titanium and copper were formed in that order by sputtering, and then copper was formed by plating to form metal wiring 4c (corresponding to process E9). A display device 29 having multiple light-emitting elements 2 was obtained by bonding a counter substrate 5 to the light-emitting elements 2 using an adhesive or the like.

[0199] (Example 28) In Example 26, a conductive film 28 was used on the side surface of the light-emitting element driving substrate 7, as shown in Figure 20i, and the photosensitive conductive paste 1 from Preparation Example 1 was used as the conductive film 28 (corresponding to step D11). The rest of the procedure was the same as in Example 26 to obtain the display device 30. The conductive film 28 was prepared as follows.

[0200] <Fabrication of conductive film 28> A release agent was applied to a PET film with a thickness of 16 μm. A photosensitive conductive paste 1 was then applied to the release PET film so that the film thickness after drying was 6.0 μm. The resulting coating was dried in a drying oven at 100°C for 10 minutes. Subsequently, exposure was performed using an exposure machine with an ultra-high pressure mercury lamp at 350 mJ / cm². 2 After exposure with the specified exposure dose, a pattern was obtained by spray developing with a 0.1% by mass aqueous sodium carbonate solution at a pressure of 0.1 MPa for 30 seconds. The obtained pattern was then cured in a drying oven at 140°C for 30 minutes to obtain a transfer sample with the wiring arranged. The line width of the obtained pattern was 50 μm and the line length was 90 mm. The transfer sample was bonded to both sides so that a portion of the wiring was positioned on the glass edge with a rounded bevel. The glass side was pressed onto a hot plate at 130°C for 30 seconds, and then the remaining portion was transferred using a hot roll laminator at 130°C and 1.0 m / min.

[0201] (Example 29) On the side of the light-emitting element driving substrate 7 of Example 27, as shown in FIG. 20i, the conductive film 28 was used, and the photosensitive conductive paste 1 described in Example 28 was used as the conductive film 28 (corresponding to step E12). Other than that, it was carried out in the same manner as in Example 27 to obtain the display device 31.

[0202] (Example 30) As shown in FIG. 21a, a light-shielding portion 29 was formed on the support substrate 26 (corresponding to step D12). Next, as shown in FIG. 21a, the light-emitting element 2 was formed between the light-shielding portions 29 (corresponding to step (D1)). Other than that, the display device 32 was manufactured in the same steps as in Example 3. The production of the light-shielding layer 29 is as follows.

[0203] <Production of the light-shielding layer 29> The coloring resin composition 1 was applied to the support substrate 26 so as to be 1 μm after heat treatment, and the coating film was dried by heating on a hot plate at 100 °C for 2 minutes. With respect to this dried film, using an exposure machine having an ultra-high pressure mercury lamp, ultraviolet light was exposed at an exposure amount of 200 mJ / cm 2 . Next, development was carried out using an alkaline developer of a 0.045 wt% potassium hydroxide aqueous solution, and then pure water washing was performed to obtain a pattern film. The obtained pattern film was post-baked in a hot air oven at 230 °C for 30 minutes to obtain a light-shielding layer.

[0204] (Example 31) A display device 33 was manufactured in the same steps as in Example 30, except that the light-shielding portion 29 of Example 30 was changed to the coloring resin composition 2 to form the light-shielding portion 29.

[0205] (Comparative Examples 1-2) The resin composition 1 of Example 1 was changed to the resin compositions 15-16, and the display devices 26-27 were obtained in the same manner as in Example 1, except that steps (D6) and (D7) were omitted. As a result, the display devices 26-27 had warping in the display device and cracks occurred, resulting in a poor defect rate after the reliability test. Also, the light extraction efficiency was not achieved. [Industrial Applicability]

[0206] The display device of the present invention can be suitably used in large signage displays, televisions and monitors, in-car displays, smartphones, smartwatches, wearable devices, tablets, notebook PCs, and the like, but its applications are not limited to these. [Explanation of symbols]

[0207] 1 Display device 2 light-emitting elements 3 Cured film 4, 4c metal wiring 4a Thickness of metal wiring placed on the surface of the cured film 4b Thickness of metal wiring extending through an opening pattern that penetrates in the thickness direction within the cured film. 5 Opposing substrate 6 electrode terminal 7. Light-emitting element driving substrate 8 drive elements 9 Barrier Metal 10 solder bumps 11a Specified area A 11b Specified area B 12 Opening Patterns 13 Bottom surface of metal wiring 4 14. Maximum length of the base 15 Reflective film 16 Bulkhead 17 External board 18. Total thickness of the insulating film 19 Inorganic insulating film 20 Cured film 21 Resin film 22 The thickness β of the inorganic insulating film between the cured film located at the first furthest position and the cured film located at the second furthest position. 23 The thickness α of the cured film located at the furthest position. 24. Thickness γ of the cured film located at the second furthest position. 25. Thickness of the first hardened film layer 26 Support substrate 27 Metal pads 28 Conductive film 29 Light-shielding part 30 TFT 31 TFT insulating layer 32 Wiring 33 Contact Holes

Claims

1. A display device having at least metal wiring, a cured film, an inorganic insulating film, and a plurality of light-emitting elements, The cured film is a film obtained by curing a resin composition containing (A) resin, The (A) resin contains one or more resins selected from the group consisting of polyimides, polyimide precursors, polybenzoxazoles, polybenzoxazole precursors, and copolymers thereof, which include formula (1) and / or formula (2). The resin composition containing the aforementioned (A) resin is positive-type photosensitive, The light-emitting element is an inorganic light-emitting diode having a pair of electrode terminals on either side. The pair of electrode terminals are connected to a plurality of metal wires extending through the cured film and the inorganic insulating film. Multiple metal wires are configured to maintain electrical insulation between them by the hardened film and the inorganic insulating film. A display device comprising a cured film having multiple layers, wherein the inorganic insulating film is arranged to be in contact with at least a portion of the spaces between the multiple layers of the cured film. 【Chemistry 1】 In general formula (1), V represents a 4- to 10-valent organic group having 4 to 40 carbon atoms, and W represents a 2- to 8-valent organic group having 4 to 40 carbon atoms. a and b each represent integers from 0 to 6, and a + b > 0. R1 and R2 represent groups selected from the group consisting of hydroxyl groups, carboxyl groups, sulfonic acid groups, and thiol groups, and multiple R1 and R2 groups contain at least one hydroxyl group, and may be the same or different. 【Chemistry 2】 In general formula (2), X and Y each independently represent a divalent to octavalent organic group having 4 to 40 carbon atoms. R3 and R4 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. c and d are integers from 0 to 4, c + d > 0, and e and f are integers from 0 to 2.

2. The display device according to claim 1, having a sandwich structure in which the inorganic insulating film is arranged between the layers of the plurality of cured films so as to be in contact with the cured films on both sides.

3. The display device according to claim 2, having a sandwich structure in which the inorganic insulating film is placed between the cured film located at the first furthest position from the light-emitting element and the cured film located at the second furthest position from the light-emitting element, in the direction perpendicular to the plane on which the plurality of cured films are stacked.

4. The display device according to claim 1, wherein the number of layers of the cured film is two or more and ten or less.

5. The display device according to claim 3, wherein, in the sandwich structure, the thickness of the cured film located at the furthest position is α (μm), the thickness of the inorganic insulating film between the cured film located at the furthest position and the cured film located at the second furthest position is β (μm), and the thickness of the cured film located at the second furthest position is γ (μm), such that α > γ, 6 ≤ α / β ≤ 100, and 0.01 ≤ β / γ ≤ 0.

75.

6. The display device according to claim 1, wherein the thickness of the inorganic insulating film is 0.2 μm or more and 1.0 μm or less.

7. The display device according to claim 1, wherein the cured film covers surfaces other than the light extraction surface of the light-emitting element.

8. The display device according to claim 1, wherein a reflective film is further provided on the cured film.

9. The display device according to claim 1, wherein a partition wall having a thickness greater than or equal to the thickness of the light-emitting element is provided between a plurality of the light-emitting elements.

10. The display device according to claim 1, wherein partitions having a thickness greater than or equal to the thickness of the light-emitting elements are arranged between a plurality of light-emitting elements in the cured film covering the light-emitting elements.

11. The display device according to claim 1, wherein the light-emitting element is an inorganic light-emitting diode with a side length of 5 μm or more and 700 μm or less.

12. The display device according to claim 1, further comprising a driving element and a substrate, wherein the driving element is connected to a light-emitting element via metal wiring, and at least a portion of the metal wiring extends to the side surface of the substrate.

13. The display device according to claim 1, further comprising a light-shielding portion between a plurality of light-emitting elements.

14. The display device according to claim 1, wherein the resin (A) further contains a structural unit represented by general formula (4). 【Transformation 3】 (In general formula (4), R ５ ~R ８ Each of these independently represents an alkylene group having 1 to 6 carbon atoms. ９ ~R １６ Each of the following independently represents a hydrogen atom, a fluorine atom, or an alkyl group having 1 to 6 carbon atoms. However, the structures represented within the parentheses are all different. g, h, and i each independently represent an integer from 0 to 35, and g + h + i > 0.

15. The display device according to claim 1, wherein the resin composition containing the resin (A) further contains a photosensitive agent (B).

16. The display device according to claim 1, wherein the resin composition containing the resin (A) further contains (C) a thermal crosslinking agent.

17. The display device according to claim 16, wherein the (C) thermal crosslinking agent is a compound having a cyclic ether group having a biphenyl structure.

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