Sputtering device

Abstract

To improve maintainability by enlarging an antenna for generating inductive coupling plasma provided to a sputtering device.SOLUTION: A sputtering device has: a deposition chamber 108; a plasma diffusion prevention plate 140 covering a sputtering target 124 and having a longitudinal-shaped opening at a position different from a surface of the sputtering target 124; an insulation member 146 having a U-like groove shape when seen from a cross section, projecting in a region surrounded by the plasma diffusion prevention plate 140, and extending in a longitudinal direction of the sputtering target 124; and a rod-like antenna 148 for generating inductive coupling plasma extending in the longitudinal direction of the sputtering target 124. The insulation member 146 is arranged to isolate a vacuum space and an atmosphere side space of the deposition chamber 108 from each other, and the rod-like antenna 148 is arranged at a portion of the U-like groove shape on an atmosphere side of the insulation member 146 and is not in contact with the insulation member 146 having the U-like groove shape.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] One embodiment of the present invention uses inductively coupled plasma (ICP) Regarding the film deposition equipment used. [Background technology]

[0002] Sputtering is a type of physical vapor deposition (PVD) used for thin film formation. The sputtering method generates plasma in a vacuum and rapidly sputters ions within the plasma. By colliding with a puttering target, sputtering is produced, and the target A thin film is formed by depositing particles (atoms or molecules) of the film-forming material onto the surface of a substrate. It is known as a technology that does this.

[0003] In a sputtering apparatus, a magnetron is placed behind the sputtering target. The magnetron method is well known, but in addition, inductively coupled plasma (ICP) is used. The sputtering apparatus used is also disclosed (see, for example, Patent Document 1). An antenna structure for generating coupled plasma is also disclosed (see Patent Document 2). [Prior art documents] [Patent Documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2016-065299 [Patent Document 2] Japanese Patent Publication No. 2016-072168 [Overview of the project] [Problems that the invention aims to solve]

[0005] In the magnetron sputtering method, since the magnetic field (magnetic field strength) generated by the magnet is non-uniform, the erosion of the sputtering target becomes non-uniform, resulting in a low effective utilization rate of the target material and a high likelihood of nodules. Also, since the plasma is locally concentrated by the magnetic field, thermal stress is likely to be applied to the target material, and there is a problem that cracks are likely to occur in the target material.

[0006] In addition, when forming a metal film by the magnetron sputtering method, if the magnetic field strength by the magnet is strong, the density of the deposited film can be increased. However, when forming an oxide material (for example, an oxide semiconductor film, an oxide conductive film), the decomposition of oxygen gas occurs only in the region with a strong magnetic field strength near the sputtering target, and unreacted oxygen molecules (O2) are adsorbed on the deposition surface and incorporated into the film in the state of oxygen molecules, resulting in a problem that the density of the deposited film decreases.

[0007] In addition, in a conventional sputtering apparatus using inductively coupled plasma (ICP), in order to efficiently generate inductively coupled plasma, a cylindrical tube of an insulator that covers the antenna body and the antenna is arranged inside the film formation chamber. However, when dealing with the scaling-up such that the film formation chamber exceeds 3 m, it has become extremely difficult to stably hold the antenna body and the cylindrical tube of the insulator that covers the antenna.

[0008] Furthermore, in an inductively coupled plasma (ICP) sputtering apparatus as disclosed in Patent Document 1, the generated inductively coupled plasma diffuses throughout the inside of the film formation chamber, and the It is impossible to confine the plasma near the sputtering target as in a magnetron sputtering apparatus. Therefore, moisture (H2O), oxygen (O2), and hydrocarbons adsorbed on the inner wall of the deposition chamber are more likely to be released in large amounts from the inner wall of the deposition chamber at the start of film deposition and incorporated into the film being deposited, which poses a fundamental problem. To increase the plasma density near the sputtering target, there is no other way than to increase the current flowing through the antenna body, which instead increases the amount of contaminant gas released from the inner wall of the deposition chamber and becomes a factor reducing the reproducibility of the film quality of the deposited film. Regarding such problems, an embodiment of the present invention aims to provide a film forming method and apparatus capable of forming a high-quality thin film with good reproducibility and high efficiency in film formation by sputtering. The film forming apparatus according to an embodiment of the present invention includes a deposition chamber in which a sputtering target is installed, a plasma diffusion prevention plate covering the sputtering target and having an opening provided at a position overlapping the surface of the sputtering target, an induction coupling plasma generating antenna provided adjacent to the sputtering target and protruding inwardly of the region surrounded by the plasma diffusion prevention plate, and a gas introduction pipe disposed inside the plasma diffusion prevention plate and introducing gas into the deposition chamber. A negative pulse voltage is applied to the sputtering target.

Effect of the Invention

[0009]

[0010]

[0011] <00001z

[0012] [Figure 1] [Figure 2] <000013z According to one embodiment of the present invention, a plasma diffusion prevention plate is used for generating inductively coupled plasma. By being positioned to cover the na and the sputtering target, inductively coupled plasma This prevents the substance from spreading throughout the entire inner space of the deposition chamber, and ensures that the thin film being deposited does not spread to the entire inner space of the deposition chamber. This prevents impurities from being incorporated. Furthermore, the sputtering target Since the plasma density in the vicinity can be increased, the sputtering rate can also be increased. It is Noh. [Brief explanation of the drawing]

[0012] [Figure 1] The overall configuration of a film deposition apparatus according to one embodiment of the present invention is shown. [Figure 2] This figure shows the configuration of a film deposition apparatus according to one embodiment of the present invention, and shows the main components provided in or connected to the pre-processing chamber, transport chamber, and film deposition chamber, excluding the load / unload chamber. [Figure 3] This shows a schematic partial cross-sectional view of the film deposition chamber of a film deposition apparatus according to one embodiment of the present invention, as seen from above. [Figure 4] This shows a detailed cross-sectional structure of an antenna for generating inductively coupled plasma used in a film deposition apparatus according to one embodiment of the present invention. [Figure 5] This shows a detailed cross-sectional structure of an antenna for generating inductively coupled plasma used in a film deposition apparatus according to one embodiment of the present invention. [Figure 6] This diagram shows a schematic view of a plasma diffusion prevention plate, provided in the deposition chamber of a deposition apparatus according to one embodiment of the present invention, as seen from the front. [Figure 7] This diagram shows a schematic view of a plasma diffusion prevention plate, provided in the deposition chamber of a deposition apparatus according to one embodiment of the present invention, as seen from the front. [Figure 8A] This diagram illustrates the effect of an inductively coupled plasma generation antenna installed in a film deposition chamber on the substrate surface, showing the case without a plasma diffusion prevention plate. [Figure 8B] This diagram illustrates the effect of an inductively coupled plasma generation antenna installed in a film deposition chamber on the substrate surface, showing the case where a plasma diffusion prevention plate is provided. [Figure 9] This diagram illustrates the effect of an inductively coupled plasma generation antenna installed in a deposition chamber on the substrate surface, and illustrates the problem of non-uniformity in the deposited thin film that can occur when there is no plasma diffusion prevention plate. [Figure 10A] An example of a film deposition target to be mounted on a film deposition apparatus according to one embodiment of the present invention is shown, and the case in which two types of target materials are used is also shown. [Figure 10B] An example of a film deposition target to be mounted on a film deposition apparatus according to one embodiment of the present invention is shown, illustrating the case in which three types of target materials are used. [Figure 11] This figure illustrates the configuration of an inductively coupled plasma generation antenna provided in the deposition chamber of a film deposition apparatus according to one embodiment of the present invention. [Figure 12] This shows the cross-sectional structure of the antenna connection region of the antenna body of an antenna for generating coupled plasma used in a film deposition apparatus according to one embodiment of the present invention. [Figure 13] This figure shows the waveforms of the AC voltage applied to the antenna for generating inductively coupled plasma, which is provided in the deposition chamber of a film deposition apparatus according to one embodiment of the present invention, and the pulse voltage applied to the film deposition target. [Figure 14] This diagram schematically shows the relationship between target voltage and film density when an InGaZnO film is deposited as an oxide semiconductor film. [Figure 15] A schematic cross-sectional view shows the configuration of the pretreatment chamber of a film deposition apparatus according to one embodiment of the present invention. [Figure 16A] This shows a front view of an antenna for generating inductively coupled plasma, which is provided in the deposition chamber of a film deposition apparatus according to one embodiment of the present invention. [Figure 16B] This figure shows a cross-sectional view of an antenna for generating inductively coupled plasma, which is provided in the deposition chamber of a deposition apparatus according to one embodiment of the present invention, and shows the cross-sectional structure corresponding to the section between A1 and A2 shown in Figure 16A. [Figure 17A]This shows a front view of an antenna for generating inductively coupled plasma, which is provided in the deposition chamber of a film deposition apparatus according to one embodiment of the present invention. [Figure 17B] This figure shows a cross-sectional view of an antenna for generating inductively coupled plasma, which is provided in the deposition chamber of a deposition apparatus according to one embodiment of the present invention, and shows the cross-sectional structure corresponding to the section between B1 and B2 shown in Figure 17A. [Figure 18A] An example of a device fabricated using a film deposition apparatus according to one embodiment of the present invention is shown. [Figure 18B] The detailed structure of the oxide semiconductor layer in a device fabricated using a film deposition apparatus according to one embodiment of the present invention is shown. [Figure 18C] The detailed structure of the oxide semiconductor layer in a device fabricated using a film deposition apparatus according to one embodiment of the present invention is shown. [Figure 19] The overall configuration of a film deposition apparatus according to one embodiment of the present invention is shown. [Figure 20] This figure shows the configuration of a film deposition apparatus according to one embodiment of the present invention, and shows the main components provided in or connected to the pre-processing chamber, transport chamber, and film deposition chamber, excluding the load / unload chamber. [Figure 21] An example of a device fabricated using a film deposition apparatus according to one embodiment of the present invention is shown. [Figure 22A] This shows a schematic partial cross-sectional view of the film deposition chamber of a film deposition apparatus according to one embodiment of the present invention, as seen from above. [Figure 22B] Figure 22A shows a front view of the ceramic component used in the film deposition chamber. [Figure 23A] This shows a schematic partial cross-sectional view of the film deposition chamber of a film deposition apparatus according to one embodiment of the present invention, as seen from above. [Figure 23B] Figure 23A shows a front view of the ceramic component used in the film deposition chamber. [Modes for carrying out the invention]

[0013] Embodiments of the present invention will be described below with reference to the drawings, etc. However, the present invention has many differences. This specification includes, and is not construed to be limited to, the embodiments illustrated below. The attached drawings, in order to make the explanation clearer, show the width, thickness, and shape of each part compared to the actual appearance. While the appearance and other aspects may be represented schematically, this is merely an example, and within the scope of this invention... The contents are not necessarily limited. Furthermore, in this invention, the specific contents described in a certain drawing are not necessarily limited. When an element of one drawing is identical or corresponds to a specific element of another drawing, A single symbol (or a symbol with a, b, etc. added after the number written as the symbol) is attached, and Explanations of the responses may be omitted as appropriate. Furthermore, "1st," "2nd," etc., are added to each element. The characters used are convenient markers used to distinguish each element, and do not require any special explanation. It has no further meaning unless it is used in this way.

[0014] In this specification, if one member or region is "on top of (or below)" another member or region In that case, unless otherwise specified, this is the case when it is directly above (or directly below) another component or area. This includes cases where it is located above (or below) other members or regions, not just in the same place. A component is included between a member or region above (or below) a material or region. This includes cases where this is the case.

[0015] [First Embodiment] Figure 1 shows an overall view of a film deposition apparatus 100 that performs sputtering film deposition according to one embodiment of the present invention. The configuration is shown. The film deposition apparatus 100 is a load unloading system that houses the substrates before and after film deposition. The substrate chamber 102, the pre-processing chamber 104 for substrate pre-processing, and the transport robot 116 A first transport chamber 106a is provided, and a second transport chamber equipped with a platen mechanism 118 is provided. V 106b, first deposition chamber 108a and second deposition chamber for sputtering film deposition Includes 108b. These chambers are connected by a gate valve and a vacuum (not shown). An exhaust mechanism is provided.

[0016] The substrate on which the thin film is formed is held in the cassette in the load / unload chamber 1 It is housed in 02. The substrate is, for example, a glass substrate. Load / unload chamber 1 The circuit board stored in 02 is transported to the transport robot 116 located in the first transport chamber 106a. Therefore, it is transported to the pre-treatment chamber 104. The pre-treatment chamber 104 is used for forming the thin film. Pre-treatment is performed on the plate. The pre-treatment chamber 104 is connected to the high-frequency power supply 120. Includes high-frequency discharge electrodes. The pretreatment involves a stage equipped with a heating mechanism and high-frequency discharge electrodes. Degassing treatment of the substrate is performed by high-frequency discharge plasma generated by the electrodes. (Figure) 1 is an embodiment in which two pre-processing chambers 104 are installed flanking the first transport chamber 106a. As shown, there is no limit to the number of pre-treatment chambers 104. As shown in Figure 1, the film deposition apparatus 100 If two pre-treatment chambers 104 are installed, the degassing process can be carried out thoroughly over time. The film deposition apparatus 100 can be performed continuously with ample margin. The configuration is not limited to the one shown in Figure 1; the number of pre-processing chambers 104 may be one or three or more. It may be provided above.

[0017] The substrates that have been pre-processed in the pre-processing chamber 104 are transported by the transport robot 116 to the second transport chamber The substrate is transported to chamber 106b. The substrate is then transported from load / unload chamber 102 to pre-processing chamber. The material is transported horizontally up to chamber 104. The second transport chamber 106b has a platen mechanism. Equipped with 118, the substrate, which was brought in in a horizontal position, is transported by a transport carrier not shown in Figure 1. It is positioned so as to be held in a vertical position or tilted at an angle of approximately 20 degrees from the vertical position. It can be done.

[0018] The first deposition chamber 108a and the second deposition chamber 108b are for inductively coupled plasma generation. An antenna 126 is provided, and a sputtering target 124 is attached. Chamber 108a and the second deposition chamber 108b are antennas for generating inductively coupled plasma. Sputtering film deposition is performed using inductively coupled plasma (ICP) generated by 126. The sputtering target 124 is connected to a pulse power supply 123, which accelerates the ions. It is possible to control the energy. The film deposition apparatus 100 uses such a mechanism. It is possible to control the density of the thin film deposited on the substrate.

[0019] The first deposition chamber 108a and the second deposition chamber 108b are made of different materials (components, composition). A sputtering target 124 of different densities can be attached, and different compositions can be processed in a vacuum. Thin films can be continuously deposited. In addition, the first deposition chamber 108a and the second deposition chamber The canvas 108b is equipped with a sputtering target 124 of the same type (components, composition, density). It is acceptable for the film to be attached, which allows for the application of different deposition conditions to deposit thin films with different properties. This is possible. Note that Figure 1 shows two film deposition chambers 108, but the film deposition apparatus 100 is The configuration is not limited to this, and the deposition chamber 108 can be configured according to the structure and type of the thin film to be fabricated. The number can be changed as appropriate. The film deposition apparatus 100, for example, when forming a single-layer thin film. The number of film deposition chambers 108 can be as few as one, or three or more when forming a multilayer thin film. The film deposition chamber 108 may be connected.

[0020] Figure 2 shows the configuration of the film deposition apparatus 100, excluding the load / unload chamber. Processing chamber 104, first transport chamber 106a, second transport chamber 106b, first film deposition Main components provided in or connected to chamber 108a and second film deposition chamber 108b This shows that a vacuum exhaust system 110 is connected to each chamber. The vacuum exhaust system 110 is connected to the turbo. It consists of vacuum pumps such as a sub-pump (TMP) and a dry pump (DRP). Vacuum evacuation The configuration of system 110 consists of a first transport chamber 106a and a second transport chamber 106b, and the first The film chamber 108a and the second film deposition chamber 108b may be different or the same. It is also acceptable to have a pressure controller in the first deposition chamber 108a and the second deposition chamber 108b. A conductance valve for the roll may be provided. Also, pre-processing chamber 1 04. The first deposition chamber 108a and the second deposition chamber 108b are connected to a gas supply system 112. The gas supply system 112 consists of a mass flow controller, a filter, and the like.

[0021] The pre-processing chamber 104 is equipped with a substrate stage 114 and a high-frequency discharge electrode 115. The high-frequency discharge electrode 115 is connected to the high-frequency power supply 120. In the pre-processing chamber 104, The high-frequency discharge plasma generated by the substrate stage 114 and the high-frequency discharge electrode 115 Then the substrate is pre-treated.

[0022] A transfer robot 116 is positioned between the pre-processing chamber 104 and the first film deposition chamber 108a. The first transport chamber 106a and the second transport chamber equipped with a platen mechanism 118 A chamber 106b is provided. The substrate has undergone desorption treatment of adsorbed molecules in the pretreatment chamber 104. It passes through the first transport chamber 106a and the second transport chamber 106b without coming into contact with the atmosphere. It is then transported to the first film deposition chamber 108a. Pre-treatment is performed in the pre-treatment chamber 104. The substrate is transported from the first transport chamber 106a to the second transport chamber 10 by the transport robot 116. It is transported to 6b. The transport robot 116 transports the substrate while keeping it in a horizontal position. Second transport The substrate transported to chamber 106b is moved vertically or vertically by the platen mechanism 118. The device is placed upright at an angle of approximately 0 degrees and then transported into the first deposition chamber 108a.

[0023] Sputtering is a method of film deposition that prevents the formation of pinholes in the deposited thin film. It is considered preferable to deposit the film on the plate in an upright position rather than horizontally. However, for example, As the size of the substrate increases, as in the case of displays (for example, in liquid crystal processes) The 8th generation glass substrate is 2200mm x 2400mm, and it bends under its own weight. Therefore, it is difficult to transport the substrates while keeping them upright at all times. In devices that perform film deposition while keeping the substrate horizontal, such as sputtering apparatuses, the large size of the substrate The standardization process increases the floor area of ​​the equipment (i.e., the floor area of ​​the cleanroom). This poses a problem. To address this problem, the film deposition apparatus 100 has a platen in the middle of the substrate transport path. A mechanism 118 is provided, and the substrate is handled horizontally until the pre-film deposition stage, and vertically during the film deposition stage. Since the circuit board is tilted at an angle of about 20 degrees from the vertical, It becomes easier to handle. Furthermore, the film deposition apparatus 100 can reduce the floor space required for installation. It has the advantage of being able to do so.

[0024] The first deposition chamber 108a is equipped with an antenna 126 for generating inductively coupled plasma. The sputtering target 124 is attached. Antenna for inductively coupled plasma generation. 126 is connected to a high-frequency power supply 120 that outputs high frequencies in the megahertz band. The antenna 126 for plasma generation superimposes the kilohertz-band AC power on the high-frequency power. An AC power supply 122 may be connected to enable the application of pressure. As mentioned above, the pulse power supply 123 is connected to the GET 124. Also, the first film deposition chamber A heater 127 for heating the substrate may be provided in 108a.

[0025] Although a detailed explanation will be omitted, the second deposition chamber 108b is also the first deposition chamber 108a. It has a similar configuration. Although not shown in Figure 2, the first film deposition chamber 108a and the second The deposition chamber 108b is positioned with the substrate tilted vertically or at an angle of approximately 20 degrees from the vertical. A transport mechanism is provided for transporting the materials.

[0026] Figure 3 shows the deposition chambers 108 (first deposition chamber 108a, second deposition chamber 108b) This shows a schematic partial cross-sectional view of the film deposition chamber 108 as seen from above. The film deposition chamber 108 has an internal space of It is configured to form a closed space isolated from the atmosphere, but Figure 3 shows two wall surfaces (first channel This shows a schematic structure between the chamber wall 109a and the second chamber wall 109b.

[0027] The deposition chamber 108 is provided so as to cover the sputtering target 124. A zuma diffusion prevention plate 140 and a plasma diffusion prevention plate 140 are provided to protrude into the area surrounded by the zuma diffusion prevention plate 140. Antenna 126 for generating inductively coupled plasma (first antenna 126a, second antenna The film deposition apparatus 100 includes (126b) and a gas introduction pipe 138 for introducing sputtering gas. It is used with the sputtering target 124 mounted in the deposition chamber 108. However, the sputtering target 124 is essentially a consumable item and is fixed to the film deposition apparatus 100. These are not components, but rather auxiliary components that can be replaced as needed. The film deposition chamber 108 is a sputtering chamber. Components such as the ring target 124 and the antenna 126 for generating inductively coupled plasma are attached. However, sealing members such as O-rings and gaskets are provided at the mounting points of each component.

[0028] The sputtering target 124 consists of a target material 132 and a backing plate 130. This includes the target material 132 being made of metals such as copper (Cu) and titanium (Ti). The mounting plate 130 is bonded with a bonding material such as an indium alloy. The target material 132 is preferably a single molded product. Sputtering target 12 4 is attached to the first chamber wall 109a of the film deposition chamber 108. 109a is provided with a first through hole 128a, and the sputtering target 124 is a backing The mounting plate 130 is installed so as to fit into the first through hole 128a. A bias voltage is applied to the puttering target 124, so the backing plate An insulating component 136 is provided between 130 and the first chamber wall 109a.

[0029] The sputtering target 124, when viewed from the front, is rectangular in shape, with its longest side perpendicular to the sloping edge. It is provided parallel to the perpendicular direction. The target material 132 is a sputterable material of various types. It is attachable. For example, the target material 132 can be a transparent conductive film or an oxide semiconductor film. A sintered metal oxide can be applied to form the target material 132. During sputtering film deposition, the temperature rises due to ion collisions. Therefore, the deposition apparatus 100 is used to suppress the temperature rise of the target material 132, backing plate 130 A cooling mechanism is provided. Figure 3 shows an example of this, where the backing plate 130 is cooled This shows a structure equipped with drainage holes for releasing wastewater.

[0030] When the sputtering target 124 is attached to the first chamber wall 109a, The GET material 132 is exposed to the internal space of the deposition chamber 108. The deposition chamber 108 contains, A shield plate 134 is provided so as to cover the periphery of the target material 132. Shield plate 1 34 is a packing exposed in the region between the target material 132 and the first chamber wall 109a. It is provided so as to cover the surface of the backing plate 130. With this structure, the backing It is possible to prevent rate 130 from being exposed to inductively coupled plasma and sputtering. Cut.

[0031] The deposition chamber 108 has an antenna 126 (first antenna 12) for generating inductively coupled plasma. 6a, a second antenna 126b) is provided. Antenna 126 for inductively coupled plasma generation This is along the longitudinal direction of the sputtering target 124, and the sputtering target It is positioned so as to sandwich the to 124. That is, the antenna 126 for inductively coupled plasma generation. The first antenna 126a and the second antenna 126b serve as the sputtering target. They are arranged so as to sandwich 124.

[0032] First antenna 126a and second antenna 126a as antenna 126 for inductively coupled plasma generation Tena 126b is an antenna body 148 (first antenna body 14) for generating inductively coupled plasma. 8a, second antenna body 148b) and U-shaped insulating member 146 (first insulating member) Includes 146a and 146b). The first antenna body 148a is the first insulating member The second antenna body 148b is provided within 146a, and the second antenna body 148b is provided within the second insulating member 146b. The antenna 126 for inductively coupled plasma generation has an insulating member 146 on the first chamber wall. It is inserted into the second through-hole 128b of 109a and protrudes from both sides of the sputtering target 124. It is provided to allow it to be released. In this way, the insulating member 146 is provided for inductively coupled plasma generation The antenna body 148 is provided, so the antenna body 148 for generating inductively coupled plasma This prevents the material sputtered from the target material 132 from adhering to it. Furthermore, the antenna body 148 for generating inductively coupled plasma is exposed to the inductively coupled plasma. It can be prevented from happening.

[0033] Antenna 126 for inductively coupled plasma generation is the antenna body for inductively coupled plasma generation. 148 is located higher than the surface of the target material 132 (closer to the center within the deposition chamber 108) It is provided so as to protrude from the position (or the position on the substrate 200 side). For example, inductively coupled plasma The antenna body 148 for generating the material protrudes from the surface of the target material 132 by a length D2. It is provided in this manner. In this way, the antenna body 148 for inductively coupled plasma generation is targeted By providing the material so that it protrudes from the surface of the target material 132, the surface of the target material 132 is made This can increase rasma density.

[0034] Figure 22A shows the deposition chamber 108 (first deposition chamber 108a, second deposition chamber 10 Figure 22A shows another configuration of 8b). Figure 22A shows the deposition chamber 108 viewed from above, similar to Figure 3. A schematic cross-sectional view of the partial structure is shown. The deposition chamber 108 shown in Figure 22A is an inductively coupled plasma Antenna 126 for generating malformation (first antenna 126a, second antenna 126b) and spa A portion of the first chamber wall 109a to which the taring target 124 is attached is a ceramic part. The structure formed from material 180a is shown. Figure 22B shows the front view of this ceramic member 180a. The diagram is shown.

[0035] As shown in Figures 22A and 22B, the ceramic member 180a is sputtered A first through-hole 128a for attaching the target 124 is provided. Since 180a has insulating properties, the sputtering target 124 is directly attached. This can be done by attaching the sputtering target 124 to the deposition chamber 108. In doing so, the insulating component 136 shown in Figure 3 can be omitted. Also, the ceramic part Material 180a contains an antenna 126 (first antenna 126a, second antenna 126a) for generating inductively coupled plasma. A second through-hole 128b is provided for attaching a second antenna 126b. The insulating members 146 (first insulating member 146a, second insulating member 146b) are shaped as follows: Inserted through the 2 through hole 128b, and secured by an O-ring on the back side of the ceramic member 180a It is vacuum sealed. Also, since the ceramic component 180a is insulating, the target A shield plate 134 covering the peripheral edge of the material 132 can be integrated into the structure.

[0036] Figure 23A shows the deposition chamber 108 (first deposition chamber 108a, second deposition chamber 10 In 8b), a portion of the first chamber wall 109a is inductively coupled to the ceramic member 180b. Plasma generation antenna body 148 (first antenna body 148a, second antenna body 1 48b) has a U-shaped insulating member 146 (first insulating member 146a, second insulating member) that covers it. Figure 23B shows the integrated structure of 146b). Also, Figure 23B shows the ceramic member 180b. A front view is shown. As shown in Figures 23A and 23B, the insulating member 146 has a U-shaped groove. The first insulating member 146a and the second insulating member 146b are integrated with a part of the first chamber wall 109a. Molding reduces the number of parts and prevents leaks (air leaks in the vacuum). This can be done. Also, the ceramic member 180b has a U-shaped groove for insulating (first insulating member) The atmospheric side of the portion corresponding to 146a and the second insulating member 146b (for inductively coupled plasma generation) A glass layer may be formed on the side where the antenna body 148 is provided. This further reduces leakage from the atmosphere.

[0037] The ceramic components 180a and 180b not only have excellent insulating properties, but also have high heat resistance. Because it has a low coefficient of thermal expansion, allows for precision machining, and emits little gas, it is suitable for film deposition. It can be suitably used as a wall material for B108. Antenna 1 for inductively coupled plasma generation By using ceramic members 180a and 180b in the wall material near 26, inductively coupled plasma This reduces the power loss of the antenna 126 used for power generation. This allows for an increase in the plasma density near the surface of material 132.

[0038] As shown in Figures 22A and 23A, the sputtering target 124 is attached to the By forming the chamber wall 109a with ceramic members 180a and 180b, This reduces the amount of degassing from the inner wall of the chamber, thereby increasing the plasma density. Furthermore, the periphery of the target material 132 is covered with insulating ceramic members 180a and 180b. As a result of this configuration, the region where a perpendicular electric field is generated relative to the surface of the target material 132 is It can be enlarged, allowing for the creation of denser films.

[0039] Figure 4 shows a detailed cross-sectional structure of antenna 126 for inductively coupled plasma generation. The antenna body 148 for plasma generation is formed from a hollow metal tube 150. For example, induction The antenna body 148 for generating coupled plasma is made of copper (Cu), brass, and aluminum (Al). It is formed from a hollow metal tube 150, etc. The antenna body 148 for inductively coupled plasma generation is A rod-shaped antenna is formed using such metal tubes, and cooling water flows through the hollow portion. The inner surface of pipe 150 is coated with nickel (Ni) or tin (Sn) to prevent corrosion. It is preferable that a conductive layer 151 formed of a film is formed. The insulating member 146 is Quartz, or alumina, yttria (Y2O3), forsterite (Mg2SiO4), It is formed from ceramics such as steatite (MgO·SiO2). The insulating member 146 is induction This is a U-shaped groove member on which the antenna body 148 for generating conductive plasma is arranged, and vacuum It is positioned to separate it from the atmosphere. On the surface of the insulating member 146 (especially the surface facing the atmosphere), A glass layer 147 is provided to increase airtightness (to prevent leakage). This is preferable. The antenna body 148 for inductively coupled plasma generation is passed through the insulating member 146. As a result, it is positioned on the atmospheric side. In this way, an antenna for inductively coupled plasma generation By positioning the main unit 148 on the atmospheric side, the accuracy of its installation position can be improved, and the target The uniformity of the plasma density near the material 132 can be improved. Also, inductively coupled plasma The holding mechanism for the antenna body 148 used for power generation can also be freely designed.

[0040] As shown in Figure 5, the antenna 126 for generating inductively coupled plasma is an inductively coupled plasma The system may include multiple antenna bodies 148 for generating Zuma. That is, inductive coupling. Multiple inductively coupled plasma generation antenna bodies 148 It consists of 48 and may be located on the atmospheric side of the insulating member 146. Inductively coupled plasma generation The metal tube 150 that constitutes the antenna body 148 for use increases in frequency due to the skin effect. Therefore, the AC resistance increases. For example, when a high-frequency power of 13.56 MHz is generated in an inductively coupled plasma Assuming that the wall thickness of the metal tube 150 is 5 mm when applied to the actual antenna body 148 However, the current will only flow in a region approximately 17.7 μm deep from the surface of the metal tube 150. To prevent power loss due to the skin effect, an antenna 12 for inductively coupled plasma generation is used. As shown in Figure 5, 6 consists of multiple inductively coupled plasma generation antenna bodies 148 arranged in parallel. It may be placed there.

[0041] As shown in Figure 3, the gas introduction pipe 138 is in the region inside the plasma diffusion prevention plate 140. It is installed adjacent to the first antenna 126a. The gas inlet pipe 138 is for sputtering gas It is provided to introduce the gas into the film deposition chamber 108. The gas introduction tube 138 is inductively coupled Similar to the antenna 126 for plasma generation, in the longitudinal direction of the sputtering target 124 It is installed along the line. The gas introduction pipe 138 has a structure in which a shower nozzle is attached to a metal pipe. It may have, but is formed of an insulating porous material, such as a porous ceramic tube. It is preferable that the gas introduction pipe 138 is porous, thus preventing sputtering. The sputtering gas can be uniformly introduced along the longitudinal direction of the target 124.

[0042] The plasma diffusion prevention plate 140 surrounds the area where the sputtering target 124 is placed. It is provided in such a way. The plasma diffusion prevention plate 140 is a box-shaped member, and the film deposition chamber 10 A space is formed inside 8, enclosed by the first chamber wall 109a and the plasma diffusion prevention plate 140. It is provided in such a manner. The plasma diffusion prevention plate 140 is approximately on the surface of the first chamber wall 109a. A parallel first surface 142 and a second surface 143 extending from the first surface 142 toward the first chamber wall 109a It has the following: In addition, the region surrounded by the plasma diffusion prevention plate 140 has the first chamber wall 10 A protective plate 141 is provided so as to cover the surface of 9a. First surface of the plasma diffusion prevention plate 140 A first opening 144 is provided in 142. The first opening 144 is for the target material 132 It is placed in a position that overlaps with it.

[0043] Figure 6 shows a schematic diagram of the structure of the plasma diffusion prevention plate 140 when viewed from the front. The taring target 124 is located in the area surrounded by the plasma diffusion prevention plate 140. When the puttering target 124 is viewed from the front, the target material 132 exhibits plasma diffusion. It is exposed through the first opening 144 of the protective plate 140.

[0044] Antenna 126 for inductively coupled plasma generation (first antenna 126a, second antenna 12 6b) is positioned so as to be covered by the plasma diffusion prevention plate 140. First antenna body 14 8a is a connection between the first metal tube 150a and the second metal tube 150b via the first capacitor 152a. Having a connected structure, the second antenna body 148b has a third metal tube 150c and a fourth metal tube 1 The structure has 50d connected via a second capacitor 152b.

[0045] The plasma diffusion prevention plate 140 has slit-shaped openings from the second surface 143 to the first surface 142. A second opening 154 is provided. The second opening 154 is an antenna for generating inductively coupled plasma. Multiple of these are provided, extending in a long, slender shape in a direction intersecting the longitudinal direction of 126. The second opening 154 is , an orifice for sputtering gas, surrounded by a plasma diffusion prevention plate 140 It has the function of controlling the flow of sputtered gas supplied to the space. That is, the second opening 1 54 is the space surrounded by the plasma diffusion prevention plate 140 in which the sputtered gas remains for a predetermined time. Furthermore, the conductance of the gas flow is controlled to form a uniform gas pressure in the film deposition area. It has the function of generating inductively coupled plasma. The antenna 126 has a function to prevent induced currents from being generated in the plasma diffusion prevention plate 140. It has an energy transfer from antenna 126 for inductively coupled plasma generation to the inductively coupled plasma. It can improve communication efficiency.

[0046] The plasma diffusion prevention plate 140 is formed of a material with a secondary electron emission rate greater than 1. Preferred. For example, the plasma diffusion prevention plate 140 is made of magnesium mainly composed of aluminum. It is preferable that it be formed from a barium alloy, barium alloy, or calcium alloy. The plasma diffusion prevention plate 140, formed from these metal materials, is a sputtering target 12 It is preferable that the inner surface facing 4 is anodized. An anodic oxide film of magnesium alloy, barium alloy, or calcium alloy is formed on the inner surface. This makes it possible to make the secondary electron emission ratio greater than 1. The surface is positively electrically resistant, and the argon ion (positive ion) plasma diffusion prevention plate 140 This prevents the incidence and collision of argon ions (positive ions). Sputtering of the plasma diffusion prevention plate 140 is prevented, and film deposition is performed in the deposition chamber 108. This can reduce impurities incorporated into the thin film.

[0047] When precisely controlling the carrier concentration of an n-type oxide semiconductor film by sputtering, It is necessary to prevent the inclusion of impurities that cause the lectron killer effect. As a countermeasure, The inner surface of the plasma diffusion prevention plate 140 exposed to conductively coupled plasma is treated with an electron killer. It is preferable to cover it with an insulating film that does not produce an effect. Examples of border films include silicon oxide (SiO2), magnesium oxide (MgO), and aluminum. Magnesium oxide (Al2O3) is an example. In particular, magnesium oxide, which has a high secondary electron emission rate, is used as an insulating film. Silicon oxide containing magnesium (MgO) is preferred. It is preferable to cover the surface of the plasma diffusion prevention plate 140 with aluminum oxide or the like.

[0048] The plasma diffusion prevention plate 140 is formed by the antenna 126 for inductively coupled plasma generation. To prevent the inductively coupled plasma from spreading throughout the entire deposition chamber 108, It can be blocked. By forming a physical wall called the plasma diffusion prevention plate 140, the film deposition chamber This prevents the inductively coupled plasma from spreading unnecessarily within 10⁸. The deposition chamber 108 is guided to the region surrounded by the plasma diffusion prevention plate 140 and the anti-adhesion plate 141. It has a structure in which a deductively coupled plasma is generated, and the inductively coupled plasma does not spread to other regions. The plasma diffusion prevention plate 140 and the anti-adhesion plate 141 have an anodic oxide film formed on their surfaces. This can enhance the plasma confinement effect and increase the plasma density. ru.

[0049] Conventional magnetron sputtering equipment improves the film density of oxide semiconductor films. Therefore, it is required to maintain the gas pressure at 0.5 Pa or less during film deposition. Not only are impurity gases released from the inner wall of the chamber sputtered, but the structural members inside the deposition chamber are also sputtered. It is important to note that these impurities can be incorporated into the membrane.

[0050] InGaSnO x Oxide semiconductors, such as those represented by [specific example], have an n-type conductivity, and therefore [unclear] Stainless steel containing iron (Fe), chromium (Cr), manganese (Mn), etc., which has a strong anti-corrosion effect. When a thin-film deposition chamber is fabricated using stainless steel, the chamber wall does not come into contact with the plasma. It is necessary to prevent this completely. When depositing an oxide semiconductor film, water adsorbed on the substrate surface If no treatment is performed to remove (H2O), hydrocarbons, etc., the film density will not be high. It is not possible to fabricate highly reliable thin-film transistors.

[0051] Even during the process from degassing the substrate surface to transporting it to the deposition chamber, the substrate temperature is kept below 150°C. If not held in place, moisture (H2O) in the vacuum chamber will be re-adsorbed, improving reproducibility. It is not possible to increase the density. Furthermore, it is not possible to increase the film density of the oxide semiconductor film as it is deposited. To achieve this, the substrate temperature needs to be raised to over 200°C to improve the crystallization rate. By adding a small amount of hydrogen gas (H2) to the deposition gas (Ar+O2), the inside of the deposition chamber This reduces contamination by impurity gases escaping from the wall and eliminates the need for heat treatment after film formation. This is possible. In thin-film transistors, the heat treatment temperature after the device is completed can be reduced to about 200°C. Because this can be done, manufacturing costs can be significantly reduced.

[0052] Thus, the film deposition chamber 108 is protected by a plasma diffusion prevention plate 140 and an anti-deposition plate 141. Since it has a structure in which the inductively coupled plasma is confined, the chamber wall 109 (first chamber Impurities adsorbed on the wall 109a, second chamber wall 109b, etc. (moisture (H2O), hydrogen ( This prevents H2, hydrocarbons, etc. from being incorporated into the thin film deposited on the substrate. This is possible. And the film deposition chamber 108 was made of stainless steel (SUS304). Even in such cases, it is possible to prevent contamination problems caused by iron (Fe), chromium (Cr), etc.

[0053] As shown in Figure 7, a mesh 170 may be provided in the first opening 144. By providing mesh 170, the confinement effect of inductively coupled plasma can be enhanced. Mesh 170 is made of a metallic material that does not have an electron killer effect. Preferred. For example, mesh 170 is made of titanium (Ti), tungsten (W), and nickel. It is preferable that it be formed from a metallic material selected from (Ni) and tantalum (Ta). This ensures that the plasma does not spread into the deposition chamber 108, and also prevents the oxide semiconductor from spreading. When depositing a conductive film, impurities that act as electron killers are incorporated into the film. This can prevent the following: By installing Mesh 170, negative oxygen ions This makes it easier to perpendicularly incident the electron onto the substrate 200, promoting the crystallization of the deposited oxide semiconductor film. It is possible.

[0054] The opening ratio of the mesh 170 is preferably 70% or more. The wire (or mesh pattern) is positioned in the direction of movement of the substrate (horizontal direction), as shown in Figure 7. The mesh is positioned to intersect with the elements at an angle ranging from 30 to 60 degrees. This prevents the 170 patterns from being transferred to the deposited film.

[0055] The plasma diffusion prevention plate 140 also includes an antenna 126 (1st) for inductively coupled plasma generation. It is provided so as to be interposed between antenna 126a, second antenna 126b) and substrate 200. It is preferable that the plasma diffusion prevention plate 140 is absent, as shown in Figure 8A. In addition, an antenna 126 for inductively coupled plasma generation (first antenna 126a, second antenna 1 The problem is that 26b) affects the film quality of the thin film deposited on the substrate 200. The antenna 126 for generating inductively coupled plasma (first antenna 126a, second antenna 1 The surface 202 of the substrate 200 adjacent to 26b) is the antenna 12 for generating inductively coupled plasma. 6 (First antenna 126a, second antenna 126b) is affected by self-bias Therefore, the film quality of the deposited thin film differs greatly. In contrast, as shown in Figure 8B , Antenna 126 for inductively coupled plasma generation (first antenna 126a, second antenna 12 When the plasma diffusion prevention plate 140 is interposed between 6b) and the substrate 200, the self-bias Since the influence is shielded, the film quality of the thin film deposited on the substrate 200 can be kept constant. Furthermore, the antenna 126 for generating inductively coupled plasma is connected in a coupling region (where two conductors are capacitively coupled). This is a region, and details will be described later. ) When a plasma diffusion prevention plate 140 By having this feature, the problem of plasma inhomogeneity can be solved.

[0056] Furthermore, if the plasma diffusion prevention plate 140 is not provided, the substrate 200 will form the first opening. Even in the mobile film deposition method, which moves in one direction in front of section 144, inductive coupling occurs as shown in Figure 9. Metal tubes 150 (first metal tube 150a and the second) that constitute the antenna body 148 for plasma generation Capacitor 152 connects the second metal tube 150b, the third metal tube 150c, and the fourth metal tube 150d. The film quality differs in the region where it overlaps with (the first capacitor 152a and the second capacitor 152b). That becomes the problem.

[0057] In other words, if the plasma diffusion prevention plate 140 is not provided, the first antenna 12 The first capacitor 152a and the second capacitor 126b are provided on 6a and the second antenna 126b, respectively. The plasma density differs in the portion of the densifier 152b, and the antenna connection region 2 overlaps with that portion. Since this affects the film quality of the thin film deposited on 04, a uniform thin film is formed across the entire substrate 200. This becomes impossible. In contrast, when a plasma diffusion prevention plate 140 is provided... This means that there is no region corresponding to the antenna connection region 204, resulting in plasma inhomogeneity. Since the influence of the material is eliminated, it becomes possible to form a uniform film over the entire surface of the substrate 200.

[0058] The film deposition apparatus 100 is a mobile film deposition system, and as shown in Figure 3, the substrate 200 is transported on the transport tray 1 It is mounted on 60 and transported in front of the sputtering target 124. The substrate 200 is p The target material is transported in a position close to the razma diffusion prevention plate 140. As shown in Figure 3, Let D1 be the distance from the surface of 132 to the surface of substrate 200, and the surface of substrate 200 and plasma Let D3 be the distance between the surface of the diffusion prevention plate 140 and the object. In this case, the distance D3 is 5 minutes of the distance D1. The plasma diffusion prevention plate 140 and the transport tray 160 are arranged so that the value is 1 or less. For example, if the distance D1 is 55 mm, the interval D3 will have a length of 5 mm.

[0059] In this way, by transporting the substrate 200 in close proximity to the plasma diffusion prevention plate 140, Sputtering gas supplied to the area enclosed by the rasma diffusion prevention plate 140 enters the first opening 144 This allows for a reduction in conductance when the material flows into the deposition chamber 108. Furthermore, this configuration allows for the removal of impurities (water (H2O), hydrogen (H)) adsorbed on the chamber wall 109. 2) It has the effect of preventing hydrocarbons, etc. from diffusing and flowing into the film deposition area. This can improve the reproducibility of the physical properties of the thin film that is deposited.

[0060] Figures 10A and 10B show a sputtering target 124 applicable to the mobile deposition method. An example is shown. Figure 10A shows two types of target material 132 on the backing plate 130. (First target material 132a, second target material 132b) are bonded together with bonding material 131 The defined structure is shown. Indium or an indium alloy is used as the bonding material 131. I can stay.

[0061] The first target material 132a and the second target material 132b differ in composition or material. These are combined. For example, if the target material is an oxide semiconductor, the first target material 132a is a ternary system containing indium (In), gallium (Ga), and tin (Sn). An oxide semiconductor target is used, and the second target material 132b is the first target An oxide semiconductor target with a higher gallium (Ga) concentration compared to material 132a is used. By arranging the two types of target materials side by side in the transport direction of the substrate, the composition Two different layers can be deposited consecutively.

[0062] The first target material 132a and the second target material 132b are designed to prevent damage due to thermal expansion. Therefore, they are placed on the backing plate 130 at predetermined intervals. The interval G1 is 0 It is about 0.5 mm. In this case, the backing plate 130 or To prevent the bonding material 131 from being exposed, the first target material 132a and the second target material The T material 132b has a tapered end when viewed in cross-section. Specifically, it is shown in Figure 10A. As such, the first target material 132a has a top surface relative to the bottom surface that is in contact with the bonding material 131. A tapered surface is formed so that the side ends protrude, and the second target material 132b faces the upper side. A tapered surface is formed with a protruding bottom surface. These two tapered surfaces interlock. By arranging the first target material 132a and the second target material 132b, sputtering When the target 124 is viewed from above, the backing plate 130 and bonding material 1 31 can be prevented from being exposed. That is, one backing plate 130 Even when two types of target material are placed, the backing plate 130 in the boundary region This prevents the bonding material 131 from being sputtered and prevents the accumulation of impurities. This can prevent it from being incorporated into the membrane.

[0063] In the deposition chamber 108, the substrate 200 is sputtered at a constant speed onto the sputtering target 124 Since it is transported in one direction in front of the first target material 132a, the second target material 1 By narrowing the width of 32b, the thickness of the deposited thin film can be varied. Example For example, the width of the second target material 132b is made narrower than the width of the first target material 132a. This increases the thickness of the thin film deposited on the first target material 132a, and the second target material The thickness of the thin film deposited with 132b can be reduced.

[0064] Figure 10B shows three types of target materials 132 (first target material 132a, third target material 132a) An example is shown in which the first target material 132c and the second target material 132b are arranged. In this case as well, Figure 10A shows As in the example shown, the adjacent side ends of each target material are tapered. Specifically, the third target is sandwiched between the first target material 132a and the second target material 132b. The material 132c has a trapezoidal cross-sectional shape. The third material has such a cross-sectional shape. From both sides of the get material 132c, the first target material 132a and the second target material have tapered surfaces facing in opposite directions. With the placement of the get material 132b, the sputtering target 124 is backed The structure has such that the plate 130 and bonding material 131 are not exposed in a plan view.

[0065] Figure 11 shows the antenna 126 for inductively coupled plasma generation (first antenna 126a, second antenna 126a). Details of antenna 126b) are shown. The first antenna 126a is the first insulating member 146a and The first antenna includes the main body 148a, and the second antenna 126b includes the second insulating member 146b and 2. Includes antenna body 148b. The first antenna body 148a includes the first metal tube 150a and the The two metal tubes 150b and the first capacitor 152a formed in the antenna connection region 204 are connected via the first capacitor 152a. The rod-shaped antenna is connected in this manner, and the second antenna body 148b is connected to the third metal tube 150c The second capacitor 152b is formed in the antenna connection region 204 with the fourth metal tube 150d. This is a rod-shaped antenna connected via a first antenna body 148a and a second antenna body Body 148b can reduce impedance by having such a structure. Therefore, even if the antenna body 148 for inductively coupled plasma generation is made longer, This prevents an increase in impedance, and the antenna body 148 for inductively coupled plasma generation This prevents a large potential difference from occurring at both ends. As a result, the sputtering target It can also accommodate larger versions of the To124.

[0066] Figure 12 shows the antenna connection region 204 of the antenna body 148 for inductively coupled plasma generation. The cross-sectional structure is shown. The antenna connection region 204 consists of the first metal tube 150a and the second metal tube 150b. (or the third metal tube 150c and the fourth metal tube 150d) are formed of an insulating material in a hollow tube 17 It has a structure in which the hollow tube 172 is fitted into the first metal tube 150a and the second metal tube 15 An O-ring 153 is provided in the part that fits with 0b to maintain airtightness, and cooling water flows through it. It has a structure that prevents leakage. The O-ring 153 is preferably made of a heat-resistant material, for example For example, fluororubber-based materials are used.

[0067] A conductive layer 174, which is used as an electrode for the capacitor 152, is located on the inner surface of the hollow tube 172. It is formed. The conductive layer 174 has a copper-plated first conductive layer 174a in order to reduce resistance. A second conductive layer 174b is formed with nickel (Ni) to prevent corrosion of the copper plating film. It is formed by plating or tin (Sn) plating. Also, as mentioned above, the first metal tube 1 A conductive layer 151 is also formed on the inner surfaces of 50a and the second metal tube 150b.

[0068] The conductive layer 174 is connected to the first metal tube 150a and via a hollow tube 172 formed of insulating material. The capacitor 152 is formed by being positioned opposite the second metal tube 150b. In other words, the first metal tube 150a and the second metal tube 150b have a conductive layer 174 on their inner surfaces. It is capacitively coupled by being fitted into the formed hollow tube 172, for inductively coupled plasma generation The antenna body 148 is formed in this way. The hollow tube 172 formed of insulating material is By arranging them on the inner circumference of the first metal tube 150a and the second metal tube 150b, inductively coupled plasma By reducing the irregularities of the antenna body 148 used for generation, the inductively coupled plasma can be made more uniform. ru.

[0069] Furthermore, since the antenna body 148 for generating inductively coupled plasma is located on the atmospheric side, A variable capacitor 176 can be connected in parallel with the capacitor 152. This allows for inductive connection. The impedance of the antenna body 148 for plasma generation is precisely and widely adjusted. This allows the antenna 126 for inductively coupled plasma generation to use high-frequency electricity. This makes it easier to maintain consistency with Source 120.

[0070] Furthermore, the antenna body 148 for inductively coupled plasma generation has a capacitor 152 that cools water Because it is installed in the flow path (because the capacitor 152 is in contact with the cooling water), capacitor 1 The heat generated by capacitor 52 can be effectively suppressed. With this configuration, capacitor 152 This prevents failure and destruction due to overheating, and the antenna 1 for inductively coupled plasma generation. The high-frequency power applied to 26 can also be increased to a higher power level.

[0071] Furthermore, as shown in Figure 11, the antenna 126 for inductively coupled plasma generation has a frequency of 13.56M When applying high-frequency power of Hz, the length of the antenna body 148 for inductively coupled plasma generation is... When the amplitude exceeds 3m, the problem of standing waves cannot be ignored. However, the problem of standing waves is due to inductive coupling. The plasma generation antenna body 148 is divided into two or more parts as shown in Figures 16 and 17. This can be resolved by connecting it in series via a resonant variable capacitor 176.

[0072] The antenna body 148 for inductively coupled plasma generation has an oscillation frequency of 13.56 MHz or 2 It is connected to a 7MHz high-frequency power supply 120. Specifically, the first antenna body 148a is the 1. Connected to the high-frequency power supply 120a, the second antenna body 148b is connected to the second high-frequency power supply 120b The first high-frequency power supply 120a and the second high-frequency power supply 120b are connected to the output high frequency. While the phases of the wave powers may be the same, it is preferable that they are shifted by half a wavelength (180 degrees). This allows for an increase in the plasma density on the surface of the target material 132. The first antenna body 148a is also connected to the first variable capacitance capacitor 158a, and the second antenna The main unit 148b of the antenna is connected to the second variable capacitance capacitor 158b. 158 (the first variable capacitance capacitor 158a and the second variable capacitance capacitor 158b) are induction Antenna body 148 for generating conductive coupled plasma (first antenna body 148a and second antenna Adjust the impedance of the main unit 148b) and the high-frequency power supply 120 (first high-frequency power supply 120 a) Provided to facilitate impedance matching with the second high-frequency power supply 120b) .

[0073] Antenna body 148 for inductively coupled plasma generation (first antenna body 148a, second antenna The main unit of the antenna (148b) is also connected to the AC power supply (122) with a frequency of 10kHz to 1000kHz. It continues. Antenna body 148 for inductively coupled plasma generation (first antenna body 148a, Between the second antenna body 148b) and the AC power supply 122 is a coil for blocking high frequencies. 156 is inserted. In addition to high-frequency power, AC voltage is used as an antenna for inductively coupled plasma generation. By applying it to the main unit 148 (first antenna main unit 148a, second antenna main unit 148b) This allows for an increase in the plasma density on the surface of the target material 132.

[0074] Furthermore, by superimposing the AC voltage on the high-frequency power, the deposits attached to the insulating member 146 (The product sputtered from the target material 132) is removed by the sputtering phenomenon. This can be done. This makes it possible to suppress changes in discharge characteristics over time. In particular, resistance When depositing a transparent conductive film with low resistance, the amplifier for generating inductively coupled plasma shown in Figure 11 is used. The circuit configuration of Tena 126 is advantageous in obtaining a stable discharge. When forming a high-performance oxide semiconductor film, even if deposits adhere to the insulating member 146, it does not cast a large shadow. Since it is not affected by vibrations, the AC power supply 122 is not essential. On the other hand, the first antenna 126 When the distance between a and the second antenna 126b becomes 300 mm or more, sputtering - Since the plasma density in the central region of the get 124 decreases, the AC power supply 122 is used to first By applying an AC voltage between the antenna body 148a and the second antenna body 148b, Plasma density can be made uniform.

[0075] A pulse power supply 123 is connected to the sputtering target 124. 3 applies a negative voltage of approximately -100V to -600V to the sputtering target 124. A pulse voltage is applied. As shown in Figure 13, a negative pulse voltage is applied to the inductively coupled plasma. The AC voltage applied to the main antenna body 148 for generation should be applied at the timing when the AC voltage applied to the antenna becomes 0V. This makes it possible to emit sputtering particles perpendicular to the substrate. It is possible to deposit a dense film.

[0076] Figure 14 shows the results when an InGaZnO film is deposited as an oxide semiconductor film by sputtering. The relationship between target voltage and film density is schematically shown. Sputtering using inductively coupled plasma. The advantages of the ring method are the power supply that generates and maintains the plasma and the control over sputtering deposition. The key feature is that it allows for the separation and independent control of the two power sources. In the DC magnetron method, the voltage applied to the sputtering target is -300V or less. If the position is set downwards, the plasma generation becomes uneven, making it impossible to maintain a stable discharge.

[0077] In contrast, when using inductively coupled plasma, an antenna for generating inductively coupled plasma is required. By increasing the high-frequency power applied to the plasma to increase its density, negative oxygen ions and acid This makes it possible to generate a large amount of elementary radicals. The magnetic field of the magnet confines the plasma near the sputtering target. Because there is no obstruction, the plasma can be brought into uniform contact with the substrate surface. This allows the metal and It can promote oxidation reactions with oxygen atoms.

[0078] In sputtering using inductively coupled plasma, when depositing an InGaZnO film... By applying a voltage of approximately -200V to the sputtering target, the substrate surface can be treated. This allows for increased crystallization while minimizing damage to the deposited film. The film density of the InGaZnO film is 6.30 g / cm³. 3 This can be achieved. The theoretical value is 6.378 g / cm³. 3 It is close to that value.

[0079] In conventional magnetron systems, stability is not achieved unless the target voltage is increased to -300V or higher. Because it is not possible to maintain the discharge, damage to the film increases, and the film density drops to 6. 25g / cm 3 It is difficult to do the above. In contrast, the inductively coupled plasma of this embodiment The film deposition apparatus 100, which utilizes a microfilm, deposits oxide semiconductor films of various compositions, including InGaZnO films. It is possible to increase the film density and the amount of the threshold voltage Vth shift of the thin-film transistor. It can be reduced. In other words, a film deposition apparatus utilizing inductively coupled plasma of this embodiment. The value 100 can improve the long-term reliability of thin-film transistors.

[0080] Figure 15 shows the configuration of the pre-processing chamber 104. The pre-processing chamber 104 contains substrate st A stage 114 and a high-frequency discharge electrode 115 are provided. The substrate stage 114 is the substrate on which the substrate is placed. A lifting mechanism 164 is added to raise the plate 200 upwards. The substrate stage 114 is for substrate 2 Multiple pins 162 are provided in contact with 00, and the lifting mechanism 164 moves the pins 162 upward. By protruding outwards, it has the function of lifting the substrate 200 into a floating state.

[0081] The substrate stage 114 is formed of a conductor to function as a ground electrode, and the pre-processing step The chamber 104 is set to have the same potential as the chamber wall. A heater for heating a substrate (not shown) may be built in. The high-frequency discharge electrode 115 is The high-frequency discharge electrode 115 and the substrate stage are positioned opposite each other. The 114 is connected to a high-frequency power supply 120 with an oscillation frequency of 13.56 MHz or 27 MHz. The pre-treatment chamber 104 is also provided with a gas inlet pipe 166. From 166 onwards, as a pretreatment gas, for example, nitrogen (N2) gas, oxygen (O2) gas, or Nitrous oxide (N2O) gas is introduced. Also, instead of gas introduction pipe 166, a shower is used. A high-frequency discharge electrode 115 made of a plate is used, and gas is introduced from there. It is also acceptable. The pressure used to generate the plasma during pretreatment should be 10 Pa to 10 3 range of Pa It is preferable.

[0082] The pre-treatment chamber 104 is where the pre-treatment gas is introduced, and when high-frequency power is applied to the high-frequency discharge electrode 115, a high-frequency discharge plasma 168 is generated. After the high-frequency discharge plasma 168 reaches a stable state, the substrate 200 is lifted by the pins 162 and placed in a floating state above the substrate stage 114. In this state, the high-frequency discharge plasma 168 is generated so as to penetrate not only the front surface but also the back surface of the substrate 200. As a result, not only the front surface of the substrate 200 (the surface on which the thin film is deposited) but also impurities and contaminants such as moisture adsorbed on the back surface and side surfaces can be removed. Since the pins 162 are exposed to the plasma, it is preferable that they are made of insulating ceramics so as not to release impurities.

[0083] Up to now, plasma treatment in a vacuum has also been performed as pre-treatment of the substrate 200. However, usually, it is only plasma treatment on the front surface side of the substrate 200, and the back surface side is not exposed to the plasma. In such a state, even if the front surface of the substrate 200 is cleaned, moisture adsorbed on the back surface remains, and outgassing from the back surface continues even after the substrate 200 is transferred to the film-forming chamber. Especially when the gas pressure during sputtering film formation, such as in the formation of an oxide semiconductor film, is low, degassing treatment on only one side of the front surface of the substrate 200 is insufficient. As a result, no matter how much the film-forming chamber is evacuated to a high vacuum, adsorbed components from the back surface side of the substrate 200 (moisture (H2O), hydrogen (H2), hydrocarbons, etc.) continue to be released, so the film quality differs greatly between the vicinity of the center and the vicinity of the periphery of the substrate 200. For example, when forming an oxide semiconductor film by sputtering, the outgassing components released from the back surface of the substrate 200 ​​Due to lack of control, the carrier concentration varies significantly between the vicinity of the center and the vicinity of the periphery of the substrate 200. The larger the size of the substrate 200, the more significant this problem becomes. As the size of the substrate 200 increases, this problem becomes more pronounced.

[0084] As a degassing treatment for the substrate 200, heating at a temperature of 200 °C or higher in a vacuum can be considered, but it takes several hours to completely remove the adsorbed moisture and is not suitable for mass production. When forming the oxide semiconductor film in a single wafer process, it is not practical to perform heat treatment for several hours for each substrate 200. This is not practical.

[0085] However, as shown in this embodiment, in the pretreatment chamber 104, by floating the substrate 200 and performing plasma treatment, not only the front surface but also the back surface is exposed to the plasma, enabling degassing of the entire surface, cleaning the entire surface of the substrate in a short time, and enabling precise control of the carrier concentration. This makes it possible to perform degassing of the entire surface, clean the entire surface of the substrate in a short time, and enable precise control of the carrier concentration. This enables precise control of the carrier concentration.

[0086] Repeatedly, an important point in the film forming apparatus 100 for forming the oxide semiconductor film is to forcibly degas the adsorbed components (moisture (H2O), hydrogen (H2), hydrocarbon) adsorbed on the entire surface of the substrate 200 with nitrogen plasma or oxygen plasma before sputtering film formation. By doing so, it becomes possible to produce a homogeneous oxide semiconductor film with a constant carrier concentration across the entire surface of the substrate 200. This enables the production of a homogeneous oxide semiconductor film with a constant carrier concentration across the entire surface of the substrate 200. This makes it possible to produce a homogeneous oxide semiconductor film with a constant carrier concentration across the entire surface of the substrate 200.

[0087] The film forming chamber 108 of the film forming apparatus 100 described above is preferably formed of a metal material with low degassing. For example, when forming an oxide semiconductor film for forming a thin film transistor, it is necessary to increase the film density in order to improve reliability. For example, when forming an oxide semiconductor film for forming a thin film transistor, it is necessary to increase the film density in order to improve reliability. This is necessary to improve the reliability by increasing the film density. To increase film density, the sputtering pressure during sputtering deposition should be increased from approximately 0.1 Pa to 1.5 Pa. This needs to be done at around Pa. In this pressure range, the inductively coupled plasma is in the deposition chamber. Because it spreads throughout the entire 108, the inner wall will be exposed to the plasma. When ions collide with the inner wall of the deposition chamber, adsorbed water (H2O) and hydrogen (H2) are released. This results in the large-scale release of molecules such as hydrocarbons. These impurities are oxide semi-oxides. This can affect the characteristics of transistors formed from conductive films.

[0088] The film deposition chamber 108 of the film deposition apparatus 100 shown in this embodiment is made of steel, taking strength into consideration. Stainless steel is used. However, the components of stainless steel are iron (Fe) and molybdenum (M o) Elements such as manganese (Mn) are electron killers for n-type oxide semiconductors. Since it becomes a pure substance, it is undesirable. In other words, the stainless steel is peeled off in the deposition chamber 108. If it is present in the open, it will negatively affect the characteristics of transistors using oxide semiconductor films. In conventional sputtering equipment, the stainless steel remains exposed in the deposition chamber. Because it was used, it reduced the manufacturing yield of transistors using oxide semiconductor films. This is a factor that reduces the reproducibility of the process.

[0089] To solve these problems, the film deposition apparatus 100 according to this embodiment has a film deposition chamber Among the 108 elements are magnesium (Mg), aluminum (Al), titanium (Ti), and tungsten. A plasma diffusion prevention plate 140 made of a metal such as stainless steel (W) or nickel (Ni) is provided. Furthermore, a configuration is employed to confine the plasma. In order to enhance the electrical stability, on the surface of the plasma diffusion prevention plate 140, magnesium oxide (MgO), barium oxide (BaO), strontium oxide (SrO) , a film of oxides of alkaline earth metals such as calcium oxide (CaO), or an insulating film containing these such as silicon oxide, aluminum oxide, yttrium oxide, etc. is adopted .

[0090] As shown in FIGS. 1 and 2, the film forming apparatus 100 is provided with a first film forming chamber 108a and a second film forming chamber 108b. With such a configuration of the first film forming chamber 108a and the second film forming chamber 108b, it becomes possible to stack two types of oxide semiconductor films having different film qualities . For example, a first oxide semiconductor film can be deposited in the first film forming chamber 108a, and a second film forming chamber 108b can deposit a second oxide semiconductor film

[0091] For example, in the first film forming chamber 108a, using a target of an oxide semiconductor, sputtering is performed using only argon (Ar) or argon (Ar) and oxygen (O2) as the sputtering gas . In the second film forming chamber 108b, argon (Ar) and oxygen (O2) are used (at this time, the oxygen partial pressure is made higher than the conditions in the first film forming chamber 108a), and film formation can be performed . In the sputtering film formation of the oxide semiconductor film, by increasing the oxygen partial pressure, the density of oxygen negative ions can be increased, and the irradiation density of oxygen negative ions on the deposition surface of the thin film can be increased . Thereby, for the oxide semiconductor film deposited in the first film forming chamber 108a, the oxide semiconductor film deposited in the second film forming chamber 108b can reduce the carrier density and can also enhance the crystallinity .

[0092] Furthermore, by applying a negative pulse voltage to the sputtering target 124, Negative oxygen ions generated during discharge form on the deposited surface of oxide semiconductor films when a pulse voltage is applied. This allows the film to reach its target, promote densification, and facilitate crystallization. In this embodiment, induction The antenna 126 for generating coupled plasma can generate a large amount of oxygen radicals. The inductively coupled plasma comes into contact with or is in close proximity to the surface of the substrate 200, causing the metal elements to react with oxygen. This makes it easier to incorporate unreacted oxygen (O2) molecules into the membrane, thus reducing the probability of unreacted oxygen molecules being taken up into the membrane. It is possible.

[0093] Thus, the film deposition apparatus 100 according to this embodiment employs a mobile film deposition method, and The system has a configuration in which multiple deposition chambers 108a and 208b are connected in series. This allows for precise control of the carrier concentration when depositing oxide semiconductor films. In this embodiment, we will mainly describe an example of fabricating an oxide semiconductor film using the film deposition apparatus 100. However, it is not limited to this, and the film deposition apparatus 100 can also process transparent conductive films, other semiconductor films, and metal films. It can also be applied to manufacturing.

[0094] In this embodiment, the front view in Figure 16A and the cross-sectional view in Figure 16B (A1 shown in Figure 16A) As shown in the cross-sectional structure corresponding to the section between A2, the first antenna 126a, the second antenna 12 6b extends in the same direction as the longitudinal direction of the sputtering target 124 and to approximately the same length. An example of a rod-shaped antenna is shown. In this example, the first insulating member 146a has a U-shaped groove. The second insulating member 146b is surrounded by the first chamber wall 109a and the plasma diffusion prevention plate 140. The first antenna body 148a and the second antenna body are provided to protrude inward from the area. 148b is surrounded by a first insulating member 146a and a second insulating member 146b, which have a U-shaped groove. It is designed to be used in this way.

[0095] However, the first antenna 126a and the second antenna 126b are shown in Figures 16A and 16. The configuration is not limited to that shown in B, and the U-shaped first antenna 126a and second antenna 126b are also... Each may be divided into multiple parts and arranged accordingly. For example, the front view in Figure 17A and Figure 17B As shown in the cross-sectional view (the cross-sectional structure corresponding to the section between B1 and B2 shown in Figure 17A), multiple first Antenna main units 148a_1~148a_3, multiple second antenna main units 148b_1~14 8b_3 may be divided along the longitudinal direction of the sputtering target 124. Similarly, with this arrangement of the first antenna 126a and the second antenna 126b, This allows for increased rasma density and the deposition of dense films. See Figure 17A and Figure 17B shows the longitudinal direction of the sputtering target 124 for inductively coupled plasma generation. The container body 148 is shown in a configuration in which it is divided into three parts and arranged, for inductively coupled plasma generation. In the first antenna 126a and the second antenna 126b, an inductively coupled plasma generation antenna There is no limit to the number of divisions of the antenna body 148, and the antenna body 1 for inductively coupled plasma generation An antenna for generating inductively coupled plasma, in which 48 is divided into three or more sections, may be provided.

[0096] The present invention is not limited to the embodiments described above, and may be modified as appropriate without departing from the spirit of the invention. It is possible to do so. Furthermore, each embodiment can be combined as appropriate.

[0097] Figure 18A shows an example of an element fabricated using the film deposition apparatus 100. An example of an element is a tra This is a transistor, and Figure 18A shows the cross-sectional structure of transistor 230. Transistor 230 This includes an oxide semiconductor layer 216 formed on a substrate 200 by a film deposition apparatus 100.

[0098] The transistor 230 is, in detail, on the first insulating layer 210 formed on the surface of the substrate 200. It is formed on the first insulating layer 210, and a first conductive layer 212a and which form the source electrode. A pair of first conductive layers 212b are provided to form the drain electrode. a, 212b are, for example, indium tin oxide (ITO) and indium zinc oxide (IZ It is formed of a transparent conductive film such as O). On the first conductive layers 212a and 212b, for low resistance Therefore, second conductive layers 214a and 214b, formed from a metallic material such as aluminum (Al), are provided. It's okay to be kicked.

[0099] The oxide semiconductor layer 216 consists of first conductive layers 212a, 212b (and second conductive layer 214a, It is formed to cover 214b). On top of the oxide semiconductor layer 216, a gate insulating layer is formed. A functional second insulating layer 218 is provided, and a layer is placed on top of it so as to overlap with the oxide semiconductor layer 216. A pit electrode 220 is provided.

[0100] The oxide semiconductor layer 216 may be formed from multiple layers with different compositions and crystallinity. For example, as shown in Figure 18B, the first oxide semiconductor layer 216a and the second oxide semiconductor layer 216b It may have a stacked structure. The first oxide semiconductor layer 216a is made of indium (I n) is a ternary oxide semiconductor containing gallium (Ga) and tin (Sn), and is a second oxide semiconductor. The conductive layer 216b has a higher proportion of gallium (Ga) compared to the first oxide semiconductor layer 216a. Furthermore, high crystallinity is also preferable. The second oxide semiconductor layer 216b is the first oxide semiconductor It is formed thinner than layer 216a. The second oxide semiconductor layer 216b is gallium (Ga) Due to its high concentration, it has a wider band gap compared to the first oxide semiconductor layer 216a. It has the property of having a low riac concentration. For example, the first oxide semiconductor layer 216a is 40 nm or While the first layer is formed with a thickness of 60 nm, the second oxide semiconductor layer 216b is formed with a thickness of 4 nm to 6 nm. It is formed with a film thickness of approximately one-tenth of m.

[0101] Transistor 230 consists of a first oxide semiconductor layer 216a and a second insulating layer 218 (gate insulating layer). By providing such a second oxide semiconductor layer 216b between the layers, the carriers A channel region in which a flowing channel is formed in the first oxide semiconductor layer 216a, a so-called embedded channel. A second insulating layer 218 (gate insulating layer) and the transistor 230 are formed. The channel region is not affected by defects formed at the interface with the oxide semiconductor layer 216. The rear can be driven. Transistor 230 has such a structure, This allows for stabilization of characteristics and reduction of characteristic variations.

[0102] Furthermore, as shown in Figure 18C, the oxide semiconductor layer 216 is the first oxide semiconductor layer 216a Even if a third oxide semiconductor layer 216c is provided between the second oxide semiconductor layer 216b and the third oxide semiconductor layer 216b Good. The third oxide semiconductor layer 216c is a ternary oxide semiconductor, but it is indicative of The concentration of um (In) is higher than that of the first oxide semiconductor layer 216a and the second oxide semiconductor layer 216b. This is also enhanced. By providing such a tertiary oxide semiconductor layer 216c, The ZISTA 230 can increase field-effect mobility.

[0103] According to the film deposition apparatus 100 of this embodiment, the structure of the oxide semiconductor layer 216 shown in Figure 18B The structure can be fabricated using the sputtering target 124 shown in Figure 10A. The structure of the oxide semiconductor layer 216 shown in Figure 18C is similar to the sputtering layer shown in Figure 10B. It can be prepared using Get 124. That is, oxide semiconductors with different compositions and crystallinity Conductors can be continuously deposited in a vacuum.

[0104] The composite segmentation targets shown in Figures 10A and 10B are different from the conventional magnetron type. Sputtering equipment is unsuitable because abnormal discharges are likely to occur in the divided sections. On the other hand, magnet In methods that do not use a sputtering net, positively charged Algo is applied to the entire surface of the sputtering target. Because the ions are incident almost uniformly, abnormal discharges are less likely to occur. Because the entire surface of the get is sputtered uniformly, the surface of the sputtering target The heat generation is also uniform. Therefore, cracks caused by thermal stress in the sputtering target are also reduced. It is unlikely to occur.

[0105] InGaSnO x Tar In conventional magnetron-type sputtering equipment, the sputtering target Fine cracks called hairline cracks tend to occur, and are used in mass production factories. This was not possible. In contrast, the film deposition apparatus 100 according to this embodiment uses a magnet Because it does not use plasma, the plasma does not concentrate locally, and no localized heat generation occurs. Furthermore, hairline cracks caused by thermal stress are less likely to occur.

[0106] As in the film deposition apparatus 100 according to this embodiment, the plasma diffusion prevention plate 140 is used for inductive coupling The plasma (ICP) prevents the plasma from spreading throughout the entire interior region of the deposition chamber 108. This allows for increased deposition rates even in mobile deposition methods where sputtering is performed while the substrate is moved. This makes it possible to deposit films without reducing their quality.

[0107] Furthermore, by applying a negative pulse voltage to the sputtering target 124, Even if the target material 132 is a high-resistance material, stable sputtering film deposition can be performed. It is possible. Furthermore, negative oxygen ions can be incident perpendicularly to the substrate 200. Therefore, it is possible to prevent a decrease in film density even when the film deposition gas pressure is around 1.5 Pa. For example Even with 11th generation glass substrates (3000mm x 3320mm), increasing film density and achieving high mobility High-reliability oxide semiconductor films can be deposited at a certain temperature.

[0108] Note that the structure of transistor 230 shown in Figure 18A is just one example, and the film deposition according to this embodiment is not shown. The apparatus 100 can process oxide semiconductors of various structures, regardless of whether they are top-gate or bottom-gate type. It can be used to manufacture transistors.

[0109] [Second Embodiment] This embodiment utilizes inductively coupled plasma for sputtering and vacuum deposition (and / or An example of a film deposition apparatus capable of continuously performing electron beam deposition is shown. The film deposition apparatus is, for example, an organic electroluminescent element (or organic electroluminescent element This can be applied to the manufacture of a display device. In the following, the film formation method shown in the first embodiment is described below. This explanation will focus on the differences between this device and device 100.

[0110] Figure 19 shows the overall configuration of the film deposition apparatus 101 according to this embodiment. The film deposition apparatus 101 is , load / unload chamber 102 in which substrates are stored before and after film deposition, pre-processing of the substrate A pre-processing chamber 104 for processing and a first transport chamber 10 equipped with a transport robot 116 are provided. 6a, a second transport chamber 106b equipped with a platen mechanism 118, sputtering film deposition A first film deposition chamber 108a is provided for this purpose, and a third transport chamber 1 is provided with a platen mechanism 118. 06c, a fourth transport chamber 106d equipped with a transport robot 116, and an evaporation source 111 are provided. The third deposition chamber 108c, the fourth deposition chamber 108d, and the fifth deposition chamber 1 Includes 08e. These chambers are connected by gate valves and vacuum exhaust (not shown). A means of ventilation is provided.

[0111] Pre-processing chamber 104, first transport chamber 106a, second transport chamber 106b, third The configurations of the transport chamber 106c and the fourth transport chamber 106d are as follows in the first embodiment. It is similar to the above. In the first deposition chamber 108a, sputtering is performed by inductively coupled plasma. This is the chamber where the film deposition takes place, and the electron injection layer, which will be described later, is deposited here. Third deposition chamber Chamber 108c and the fourth deposition chamber 108d are equipped with an evaporation source 111 and vacuum deposition is performed. This is a chamber in which organic films such as the light-emitting layer and hole transport layer, which will be described later, are deposited. Furthermore, the fifth deposition chamber 106e is equipped with an evaporation source 111, and the vacuum deposition method (and This is a chamber in which the anode film, as described later, is deposited by (or by electron beam deposition).

[0112] The film deposition apparatus 101 shown in Figure 19 performs sputtering deposition using inductively coupled plasma. A chamber for deposition and a chamber in which film deposition is carried out by vacuum deposition (and / or electron beam deposition) The inorganic and organic films are continuously deposited in a vacuum because they are connected via a transport chamber. This is possible. In addition, a first film deposition is performed by sputtering using inductively coupled plasma. A second transport chamber 106b is provided with a platen mechanism 118, flanking chamber 108a. And because a third transport chamber 106c is provided, sputtering film deposition is performed on the substrate 20 The film is deposited with the object 0 tilted vertically or at an angle of approximately 20 degrees from vertical, using vacuum deposition (and / or electric In film deposition using the sub-beam deposition method, the substrate 200 is held in a nearly horizontal position during film deposition. can.

[0113] The number of chambers used for film deposition by vacuum deposition (and / or electron beam deposition) is arbitrary. Therefore, they can be appropriately connected depending on the number of layers and type of film deposited.

[0114] Figure 20 shows the configuration of the film deposition apparatus 101, including the load / unload chamber 102. Excluding the pre-processing chamber 104, the first transport chamber 106a, and the second transport chamber 106b, First deposition chamber 108a, third transport chamber 106c, fourth transport chamber 106d, The third deposition chamber 108c contains or connects to the main components. Except for chamber 108c, the configuration of the other chambers is the same as in the first embodiment.

[0115] Third deposition chamber 10 where film deposition is carried out by vacuum deposition (and / or electron beam deposition). 8c includes a turbomolecular pump, a dry pump, and a cryopump as part of the vacuum exhaust system 110. This is added. This vacuum exhaust system 110 enables high vacuum exhaust, leaving no residue inside the chamber. The moisture retained can be effectively removed. Film formation by vacuum deposition is performed using a linear evaporation source 11 A moving film deposition method may be employed in which the substrate moves in front of 1, or the evaporation source 111 is in the plane of the substrate. A scanning deposition method may be employed in which the film moves to scan the surface.

[0116] The film deposition apparatus 101 is capable of film deposition by sputtering and vacuum deposition (and / or electron beam deposition). In film deposition using the vapor deposition method, a mobile deposition method is employed, allowing for the formation of various substrate sizes. It can accommodate the following. For example, the film deposition apparatus 101 can handle 11th generation glass substrates (300 It can be used for film deposition of 0mm x 3320mm.

[0117] Figure 21 shows an example of an element fabricated using the film deposition apparatus 101. The image shows the cross-sectional structure of the organic electroluminescent element 300. The Nesens element 300 has a carrier injection amount control electrode 302 and a first insulating layer 3 on the substrate 200. 04, First electrode (cathode) 306, electron transport layer 308, second insulation with opening 311 formed Layer 310, electron injection layer 312, light-emitting layer 314, hole transport layer 316, hole injection layer 318, The organic electroluminescent element 30 has a structure in which two electrodes (anodes) 320 are stacked. 0 is the region where the opening 311 is provided, the carrier injection amount control electrode 302, the first atom Edge layer 304, electron transport layer 308, electron injection layer 312, light-emitting layer 314, hole transport layer 316, The hole injection layer 318 and the second electrode (anode) 320 have an overlapping region.

[0118] The carrier injection volume control electrode 302 is insulated from the electron transport layer 308, and the positive battery When an IAS voltage is applied, electrons are emitted from the electron transport layer 308 through the electron injection layer 312. Controlling the amount of carriers (electrons) injected into the light layer 314 and the emission position in the light-emitting layer 314. It has the function of being a bottom-mission type. Therefore, the carrier injection volume control electrode 302 is formed of a transparent conductive film.

[0119] The electron transport layer 308 has a two-layer structure. The first electron transport layer 308a is the first insulating layer 304 It is provided on a larger surface area than the carrier injection volume control electrode 302. First electrode (cathode) 30 6 is provided on the outside of the opening 311 (the region overlapping with the second insulating layer 310). First electrode ( The cathode 306 is formed, for example, as a two-layer structure consisting of a first conductive layer 306a and a second conductive layer 306b. Even if this is the case, the edge of the first conductive layer 306a may overlap with the carrier injection amount control electrode 302. It is provided in such a way. The first conductive layer 306a is formed of a transparent conductive film such as ITO or IZO. The second guide has the function of injecting electrons by forming an ohmic contact with the electron transport layer 308. The electrolytic layer 306b is provided as appropriate to reduce the resistance of the first electrode (cathode) 306.

[0120] The first electron transport layer 308a is formed of a metal oxide having semiconductor properties. Examples of metal oxides include In2O3-Ga2O3-SnO2-ZnO-based oxide materials, In2 O3-Ga2O3-SnO2-based oxide materials, In2O3-SnO2-ZnO-based oxide materials In2O3-Al2O3-ZnO-based oxide materials, Ga2O3-SnO2-ZnO-based oxide materials Materials, Ga2O3-Al2O3-ZnO-based oxide materials, SnO2-Al2O3-ZnO In2O3-ZnO-based oxide materials, SnO2-ZnO-based oxide materials, Al 2O3-ZnO-based oxide materials, Ga2O3-SnO2-based oxide materials, Ga2O3-ZnO Oxide materials, Ga2O3-MgO-based oxide materials, MgO-ZnO-based oxide materials, SnO 2-MgO-based oxide materials, In2O3-MgO-based oxide materials, In2O3-based metal oxide materials Materials, Ga2O3-based metal oxide materials, SnO2-based metal oxide materials, ZnO-based metal oxide materials The like can be used. Such a first electron transport layer 308a is as shown in the first embodiment. It can be fabricated by sputtering using the film apparatus 100.

[0121] A second insulating layer 310 is provided on the first electron transport layer 308a. An opening 311 is provided that exposes the surface of the first electron transport layer 308a. The electron transport layer 308b is a metal oxide material that has semiconductor properties, similar to the first electron transport layer 308a. The second electron transport layer 308b may be fabricated by sputtering, but the opening The region 311 may be prepared by a coating method.

[0122] In this case, it is preferable that the second insulating layer 310 is formed of a polar insulating film. Such a second insulating layer 310 can be formed using a linear fluorine-organic material. Examples of linear fluorinated organic materials include fluoroalkylsilane (FAS) materials. It can be. Examples of fluoroalkylsilane (FAS) materials include H,1H,2H ,2H-perfluorodecyltrichlorosilane (FDTS), tridecafluoro-1,1 ,2,2-tetrahydrooctyltrichlorosilane (FOTS), etc., are used. Second Diffusion The edge layer 310 is formed using a linear fluorine organic material, thereby providing a water-repellent surface. An opening 311 is formed in the second insulating layer 310. The water-repellent properties of 0 are strongly evident on the surface, while the side walls of the opening 311 are hydrophilic in comparison to the surface. To become.

[0123] When the second electron transport layer 308b is fabricated by a coating method, the above-mentioned quaternary oxide material, ternary Compositions comprising a binary oxide material, a binary oxide material, a mono-oxide material, or their precursors. The solution is applied to the second insulating layer 310 in which the opening 311 is formed, and then dried and fired. It is produced by [method]. For example, zinc oxide (ZnO) is used with aluminum as a trivalent metal element. By doping with aluminum (Al), indium (In), gallium (Ga), etc., the resistivity is 1 0 2 Ωcm~10 5 A material that has been fired to a range of Ωcm is used. Second insulating layer 3 If the surface of 10 is water-repellent, the viscosity of the applied composition can be adjusted as appropriate. The coating film is selectively formed on the opening 311. After firing, the second electron transport layer 308b is open. Because the side wall surface of part 311 is hydrophilic, the contact surface with the second insulating layer 310 is upward The cross-sectional shape is formed with a surface that rises upward and gradually tapers inward. The average film thickness of the second electron transport layer 308b should be 200 nm or more, preferably A thickness of 400 nm or more is sufficient. The second electron transport layer 308b has such a film thickness. This drastically reduces short-circuit failures in the organic electroluminescent element 300, improving yield. It is possible.

[0124] The organic electroluminescent element 300, before forming the light-emitting layer 314, first electron transport A second insulating layer 310 having an opening 311 that exposes the upper surface of the electron transport layer 308a is provided so that a light-emitting region can be defined. Further, the end of the second electron transport layer 308b provided in the opening 311 has a tapered cross-sectional shape that gently slopes from the wall surface of the opening 311 so that the step coverage of the electron injection layer 312 and the light-emitting layer 314 formed in the next step can be improved. The electron injection layer 312 is formed of a material having a small work function in order to inject electrons into the light-emitting layer 314 For example, the electron injection layer 312 is formed of a material containing calcium (Ca) oxide or aluminum (Al) oxide. As an example, the electron injection layer 312 is formed of C12A7 (12Ca·7Al2O3) electride. C12A7 electride has semiconductor characteristics, can be controlled from high resistance to low resistance, and has a work function of 2.4 eV

[0125] ~3.2 eV, which is comparable to that of an alkali metal, so it can be suitably used as the electron injection layer 312. It is also possible to use ZnO, ZnMgO, ZnSiO, etc. as the electron injection layer 312. These metal oxides have semiconductor characteristics and a small work function of 3.1 eV so that electrons can be injected into the light-emitting layer 314. These metal oxides also have a large band gap of 3.9 eV to 4.1 eV, so they can prevent holes from passing through the light-emitting layer 314 and flowing into the electron transport layer 308. ZnO, ZnMgO, ZnSiO The electron injection layer 312 is formed of a material having a small work function in order to inject electrons into the light-emitting layer 314. For example, the electron injection layer 312 is formed of a material containing calcium (Ca) oxide or aluminum (Al) oxide. As an example, the electron injection layer 3 becomes 2.4eV ~3.2 eV, which is comparable to that of an alkali metal, so it can be suitably used as the electron injection layer 312. It is also possible to use ZnO, ZnMgO, ZnSiO, etc. as the electron injection layer 312. These metal oxides have semiconductor characteristics and a small work function of 3.1 eV

[0126] so that electrons can be injected into the light-emitting layer 314. These metal oxides also have a large band gap of 3.9 eV to 4.1 eV, so they can prevent holes from passing through the light-emitting layer 314 0.7 Mg 0.3 O, ZnO, ZnSiO, etc. can also be used. These metal oxides have semiconductor characteristics and a small work function of 3.1 eV 0.75 Si 0.25 so that electrons can be injected into the light-emitting layer 314, and because they have a large band gap of 3.9 eV to 4.1 eV, they can prevent holes from passing through the light-emitting layer 314 and flowing into the electron transport layer 308. ZnO, ZnMgO, ZnSiO eV and can inject electrons into the light-emitting layer 314. Since these metal oxides have a large band gap of 3.9 eV to 4.1 eV they can prevent holes from passing through the light-emitting layer 314 and flowing into the electron transport layer 308. ZnO, ZnMgO, ZnSiO 0.7 Mg 0.3 <​​​0.25 Mix two types of metal oxides, O and another metal oxide, in a ratio of 1:4 to 1:10. It is also possible to use the combined ternary metal oxide semiconductor material as the electron injection layer 312. .

[0127] Such electron injection layers 312 are formed in a film deposition apparatus 101. That is, C12A7 A polycrystalline electride is used as the sputtering target 124, and the first film deposition chat The film is formed with 108a. The electron injection layer 312 made of C12A7 electride is 1n Formed with a film thickness of m~100nm. Electron injection layer 312 by C12A7 electride. It is formed as an amorphous thin film, but may also be crystalline. C12A7E Since rectrides are stable even in the atmosphere, they have been conventionally used as electron injection layers. Lithium fluoride (LiF), lithium oxide (Li2O), sodium chloride (NaCl), Compared to alkali metal compounds such as potassium chloride (KCl), it is easier to handle and quick to use. It has the advantage of being able to be deposited using the taring method.

[0128] Zn 0.7 Mg 0.3 O, Zn 0.75 Si 0.25 Sputtering polycrystalline materials such as O It is used as target 124, and a sputtering method utilizing inductively coupled plasma is used. The electron injection layer 312 can be formed with Zn. 0.7 Mg 0.3 O and Zn 0.75 Si 0.25 Polycrystalline ternary metal oxide material obtained by mixing oxygen in a ratio of 1:4 to 1:10. A film deposition apparatus 1 using inductively coupled plasma is used, with the sputtering target 124 being used. By performing sputtering deposition at 00, an electron injection layer 312 can be formed. 12A7 electride is stable in the atmosphere but is easily soluble in water, so it is used with target materials. When used in this manner, moisture-proof measures are necessary for storage and handling. In contrast, Zn 0.7 Mg 0.3 O and Zn 0.75 Si 0.25 A ternary gold mixture of O in a ratio of 1:4 to 1:10. Polycrystalline target materials of this oxide type are poorly soluble in water, making them easy to store and manage. .

[0129] Zn used as electron injection layer 312 0.7 Mg 0.3 O and Zn 0.75 Si 0.2 Because the resistivity of 5O is very high, conventional DC magnetron sputtering equipment cannot sputter. Sputtering cannot be performed. The sputtering target is divided into two, and the AC power supply AC dual magnetron that performs sputtering alternately on each target Using a sputtering device is also an option, but to increase the film density and improve the crystallinity... The discharge pressure during sputtering needs to be 0.3 Pa or less. However, the substrate size is For G8.5 (2500mm x 2200mm) and above, the uniformity within the plane is 0.3 Pa or less. It becomes difficult to discharge stably while maintaining this. In contrast, as shown in this embodiment In the method using inductively coupled plasma, the sputtering target 124 is made of It is possible to perform film deposition by applying a pulse voltage, and the pressure during sputtering deposition Increasing the pressure to around 1.3 Pa can promote crystallization and increase film density.

[0130] Before depositing the electron injection layer 312 in the first deposition chamber 108a, the electron transport layer 30 The substrate 200 formed up to step 8 may be subjected to degassing treatment in the pre-treatment chamber 104. By performing pretreatment, moisture and other substances are incorporated into the organic electroluminescent element 300. It can reduce impurities.

[0131] After the electron injection layer 312 is formed in the first deposition chamber 108a, the substrate 200 is transported to the third transport chamber. The platen mechanism 118 of chamber 106c returns it to a horizontal position, and the fourth transport chamber 10 It is transported to the third deposition chamber 108c via 6d. In the third deposition chamber 108c, The light-emitting layer 314 is formed by vacuum deposition (and / or electron beam deposition).

[0132] The light-emitting layer 314 uses a metal mask with through holes provided to match the arrangement of the openings 311. The process is carried out by vacuum deposition using materials corresponding to each known emission color. The light-emitting layer 314 is made by vacuum deposition. It is manufactured. The film thickness of the light-emitting layer 314 is set as appropriate, for example, 10 nm to 100 nm. It is formed with a film thickness. Furthermore, when forming a white light-emitting layer as the light-emitting layer 314, metal The light-emitting layer 314 may be formed over the entire surface of the element formation region without using a mask.

[0133] After the light-emitting layer 314 is formed, the substrate 200 is transported through the fourth transport chamber 106d to the fourth transport chamber 106d. The material is transported to the membrane chamber 108d, where the hole transport layer 316 and hole injection layer 318 are deposited. The hole transport layer 316 contains arylamine compounds, amine compounds containing a carbazole group, Vacuum deposition method using known materials such as amine compounds containing fluorene derivatives (and / or The film is formed by electron beam deposition. In addition, the hole injection layer 318 is made of molybdenum oxide and Metallic acids such as vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide Vacuum deposition method using phthalocyanine-based materials such as copper phthalocyanine (and / or The film is deposited by electron beam deposition. For example, the hole transport layer 316 is 10 nm to 500 nm. The hole injection layer 318 is formed with a thickness of m, and the hole injection layer is formed with a thickness of 1 nm to 100 nm.

[0134] In this embodiment, the hole transport layer 316 and the hole injection layer 318 are deposited in the same deposition chamber. An example of film deposition is shown. However, the film deposition apparatus 101 is not limited to this example and can deposit even more films. The device is equipped with a chamber, and the hole transport layer 316 and the hole injection layer 318 are deposited in different deposition chambers. That's fine.

[0135] After the hole transport layer 316 and hole injection layer 318 are formed, the substrate 200 is placed in the fourth transport chamber. The material is transported to the fourth deposition chamber 108d via 106d, where the second electrode (anode) 320 is deposited. The process is carried out. The second electrode (anode) 320 is a metal film such as aluminum (Al), or ITO It is formed from a laminate of a transparent conductive film such as IZO and a metal film such as aluminum (Al). The second electrode (anode) 320 is deposited in the fourth deposition chamber 108d by vacuum deposition (and They are fabricated by (or electron beam deposition) method.

[0136] As described above, the organic electroluminescent element 300 was fabricated using the film deposition apparatus 101. The deposition apparatus 101 performs sputtering deposition using inductively coupled plasma. A chamber in which film deposition is carried out by vacuum deposition (and / or electron beam deposition) The electron injection layer 312 and the light-emitting layer 3 are connected via the transport chamber 106. 14. The hole transport layer 316, the hole injection layer 318, and the second electrode (anode) 320 are connected in a vacuum. It can be deposited repeatedly. By using a film deposition apparatus 101 with such a configuration, Highly functional and reliable organic electroluminescent element 300 and organic electro A display panel equipped with a minesenescence element 300 can be manufactured. [Explanation of symbols]

[0137] 100...Film deposition equipment, 101...Film deposition equipment, 102...Load / unload channel B, 104...Pre-processing chamber, 106...Transfer chamber, 108...Film deposition chamber B, 109... Chamber wall, 110... Vacuum exhaust system, 111... Evaporation source, 112... ...Gas supply system, 114...Substrate stage, 115...High-frequency discharge electrode, 116... • Transport robot, 118...platen mechanism, 120...high frequency power supply, 122...exchange Current power supply, 123... pulse power supply, 124... sputtering target, 126... • Antenna for inductively coupled plasma generation, 127...heater, 128...through hole, 13 0...Backing plate, 131...Bonding material, 132...Target material , 134...Shielding plate, 136...Insulating components, 138...Gas inlet pipe, 140... Plasma diffusion prevention plate, 141... Anti-adhesion plate, 142... First surface, 143... Second surface Surface, 144...First opening, 146...Insulating member, 147...Glass layer, 148... Antenna body for inductively coupled plasma generation, 150 metal tube, 151 conductive layer , 152... Capacitor, 153... O-ring, 154... Second opening, 156... ...Coil, 158...Variable capacitance capacitor, 160...Transport tray, 162... Pin, 164... Lifting mechanism, 166... ​​Gas introduction tube, 168... High-frequency discharge plasma M, 170...mesh, 172...hollow tube, 174...conductive layer, 176...posable Variable capacitor, 180... Ceramic component, 200... Substrate, 202... Surface, 204... Antenna connection area, 210... First insulating layer, 212... First conductive layer, 2 14...Second conductive layer, 216...Oxide semiconductor layer, 218...Second insulating layer, 220 ...gate gates, 230...transistors, 300...organic electroluminescents Element, 302... Carrier injection volume control electrode, 304... First insulating layer, 306... First electrode (cathode), 308...electron transport layer, 310...second insulating layer, 311...open Mouth section, 312...electron injection layer, 314...light-emitting layer, 316...hole transport layer, 318 ...Hole injection layer, 320...Second electrode (anode)

Claims

1. A deposition chamber in which a rectangular sputtering target is installed in a plan view, Covering the sputtering target and overlapping with the surface of the sputtering target A plasma diffusion prevention plate having a rectangular opening at the position, It has a U-shaped groove in cross-section and protrudes into the area surrounded by the plasma diffusion prevention plate, An insulating member extending along the longitudinal direction of the sputtering target, A rod for generating inductively coupled plasma, extending along the longitudinal direction of the sputtering target. A shaped antenna, It has, The insulating member is designed to separate the vacuum space of the film deposition chamber from the space on the atmospheric side. Placed, The insulating member is inserted from the atmospheric side into a through hole provided in the film-forming chamber. The insulating member is provided with a vacuum seal portion in contact with the atmospheric side wall of the film deposition chamber. The insulating member's surface facing the atmosphere and the surface corresponding to the vacuum seal portion, from which the film is deposited, A glass layer is provided on the surface adjacent to the bar. The rod-shaped antenna is positioned on the atmospheric side of the insulating member, in the U-shaped groove. Placed, The rod-shaped antenna is not in contact with the insulating member having the U-shaped groove. A sputtering device that is a key feature.

2. The insulating material is quartz, or alumina, or yttria (Y ２ O ３ ), forsterite ( Mg ２ SiO ４ ), steatite (MgO・SiO ２ A type of ceramic material selected from ) A sputtering apparatus according to claim 1, formed of a material.

3. The rod-shaped antenna is positioned so as to protrude from the surface of the sputtering target. The sputtering apparatus according to claim 1.

4. The rod-shaped antenna is divided into multiple sections along the longitudinal direction of the sputtering target. The sputtering apparatus according to claim 1.

5. The rod-shaped antenna is formed of a plurality of metal tubes, and the plurality of metal tubes are connected via a capacitor. The sputtering apparatus according to claim 3, which is connected in this manner.

6. The rod-shaped antenna has a structure in which the plurality of metal tubes are connected by an insulating hollow tube. The sputtering apparatus according to claim 5, comprising:

7. The insulating member and the rod-shaped antenna are provided on both sides of the sputtering target. The sputtering apparatus according to claim 1.

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