Jig, method for manufacturing a stacked solid-state image sensor, and method for manufacturing a bonded solid-state image sensor

Abstract

To provide a jig for use in manufacturing a solid-state imaging device comprising a good quality photoelectric conversion film.SOLUTION: A jig 100 for use in manufacturing a solid-state imaging device comprises a first member 111 that has a first opening portion 111H and covers a package 1 and a signal readout circuit substrate 2 assembled on the package 1 and a second member 112H that has a second opening portion 112H in accordance with a film deposition area of a photoelectric conversion film 4 provided on the signal readout circuit substrate 2 and fits on the first opening portion 111H in such a manner as to enclose the film deposition area.SELECTED DRAWING: Figure 2A

Description

Technical Field

[0001] The present disclosure relates to a jig, a method for manufacturing a stacked solid-state imaging device, and a method for manufacturing a bonding-type solid-state imaging device.

Background Art

[0002] When assembling a solid-state imaging device for 4K and 8K, which is a high-definition television system, into a dedicated package, a step of adhering a signal readout circuit board to the package with an adhesive (die attach step), and a step of connecting a bonding pad portion of the signal readout circuit board and an electrode portion of the package with a fine conductive wiring (wire bonding step) are performed. In order to strengthen the adhesive force between the signal readout circuit board and the package and the adhesive force of the wiring, heating at about 100 degrees is required in the die attach step, and heating at about 150 degrees is required in the wire bonding step.

[0003] For example, Non-Patent Document 1 and Patent Document 1 disclose a stacked solid-state imaging device in which a photoelectric conversion film mainly made of crystalline selenium that causes an avalanche multiplication phenomenon is provided on a signal readout circuit board to achieve high sensitivity.

[0004] For example, Non-Patent Document 2 discloses a method for manufacturing a bonding-type solid-state imaging device including a step of forming a first amorphous selenium film on a signal readout circuit board, a step of forming a transparent conductive film and a second amorphous selenium film on a single crystal sapphire substrate, a step of bonding the first amorphous selenium film and the second amorphous selenium film by pressure and heating to form a crystalline selenium film as a photoelectric conversion film, and a step of assembling the film into a package.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

[0006]

Non-Patent Document 1

[0007] However, conventional methods for manufacturing solid-state image sensors involved forming a photoelectric conversion film on a signal readout circuit board and then assembling it into a package. This presented a problem where the photoelectric conversion film was exposed to high temperatures for a certain period of time. In particular, when the photoelectric conversion film was formed from a material with low heat resistance (approximately 40°C to 60°C), problems such as the photoelectric conversion film peeling off from the signal readout circuit board and deterioration of the photoelectric conversion film's properties became significant, making it difficult to obtain a solid-state image sensor with a high-quality photoelectric conversion film (see Figure 11).

[0008] In view of these circumstances, the object of the present invention is to provide a jig used in manufacturing a solid-state image sensor equipped with a high-quality photoelectric conversion film. [Means for solving the problem]

[0009] A jig according to one embodiment is a jig used when manufacturing a solid-state image sensor, and is characterized by comprising: a first member having a first opening and covering a package and a signal readout circuit board assembled in the package; and a second member having a second opening corresponding to a film deposition region of a photoelectric conversion film provided on the signal readout circuit board, and fitting into the first opening so as to surround the film deposition region.

[0010] Furthermore, in a jig according to one embodiment, the first member is characterized in that the length of the package excluding the thickness of the side surface of the package in the X-axis direction is longer than the length of the package in the X-axis direction, and the length of the package excluding the thickness of the side surface of the package in the Y-axis direction is longer than the length of the package in the Y-axis direction.

[0011] Furthermore, in a jig according to one embodiment, the first member is designed such that the length X1 or X2 excluding the first opening in the X-axis direction satisfies the following equation (1), using the thickness A1 or A4 relative to the side surface of the package in the X-axis direction, the distance A2 or A5 between the bonding pad portion of the signal readout circuit board and the outer peripheral side surface of the second member in the X-axis direction, and the distance A3 or A6 between the bonding pad portion and the side surface of the package in the X-axis direction. X1 = A1 + A2 + A3, or X2 = A4 + A5 + A6 (1) The length Y1 or Y2 in the Y-axis direction, excluding the first opening, is designed to satisfy the following equation (2), using the thickness B1 or B4 of the package relative to the side surface in the Y-axis direction, the distance B2 or B5 between the bonding pad portion of the signal readout circuit board and the outer peripheral side surface of the second member in the Y-axis direction, and the distance B3 or B6 between the bonding pad portion and the side surface of the package in the Y-axis direction. Y1 = B1 + B2 + B3, or Y2 = B4 + B5 + B6 (2) It is characterized by the following:

[0012] Furthermore, in the jig according to one embodiment, the second member is The length X of the second member in the X-axis direction Y , X , Y , , 112 , , Y , X , , , Y , 100B , , Y ,

[0013] , 100A , X , 112 , , 100A , , Y , 100B , 100B , X , Y , X ,

[0014] , , is the length X of the first member 111 excluding the A1 and the A4 100B , the A2, the A3, the A5, the A6, the additional coefficient K of the first member X , the length X of the package 100A , and the additional coefficient L of the outer periphery of the second member X is designed to satisfy the following formula (3), X 112 =X 100A +K X -(A2 + A3 + A5 + A6)-L X =(X 100B -K X )+K X -(A2 + A3 + A5 + A6)-L X (3) The length Y of the second member in the Y-axis direction 112 is the length Y of the first member 111 excluding the B1 and the B4 100B , the B2, the B3, the B5, the B6, the additional coefficient K of the first member Y , the length Y of the package 100A , and the additional coefficient L of the outer periphery of the second member Y is designed to satisfy the following formula (4), Y 112 =Y 100A +K Y -(B2 + B3 + B5 + B6)-L Y =(Y 100B -K Y )+K Y -(B2 + B3 + B5 + B6)-L Y (4) It is characterized by this.

[0013] Furthermore, in the jig according to an embodiment, the second member is characterized in that the length of the second opening in the X-axis direction is longer than the length of the film-forming region of the photoelectric conversion film in the X-axis direction, and the length of the second opening in the Y-axis direction is longer than the length of the film-forming region of the photoelectric conversion film in the Y-axis direction.

[0014] Furthermore, in a jig according to one embodiment, the first member covers the package and the signal readout circuit board so as to overlap with the bonding wires connected to the bonding pad portion of the signal readout circuit board and the electrode portion of the package.

[0015] A jig according to one embodiment is a jig used when manufacturing a solid-state image sensor, and is characterized by comprising: a first member having a first opening and covering a package and a signal readout circuit board assembled in the package; a second member having a second opening corresponding to a first film deposition region of a photoelectric conversion film provided on the signal readout circuit board and fitting into the first opening so as to surround the first film deposition region; or a second member having a third opening corresponding to a second film deposition region of a transparent conductive film provided on the signal readout circuit board and fitting into the first opening so as to surround the second film deposition region.

[0016] A method for manufacturing a stacked solid-state image sensor according to one embodiment is characterized by comprising the steps of: assembling a signal readout circuit board in a package; covering the package and the signal readout circuit board with a first member having a first opening; fitting a second member having a second opening corresponding to the film deposition region of a photoelectric conversion film formed on the signal readout circuit board into the first opening so as to surround the film deposition region; forming a photoelectric conversion film on the signal readout circuit board; forming a transparent conductive film on the photoelectric conversion film; and removing the first member and the second member.

[0017] A method for manufacturing a junction-type solid-state image sensor according to one embodiment is characterized by comprising the steps of: assembling a signal readout circuit board in a package; covering the package and the signal readout circuit board with a first member having a first opening; fitting a second member having a second opening corresponding to the film deposition region of a photoelectric conversion film formed on the signal readout circuit board into the first opening so as to surround the film deposition region; forming a first amorphous selenium film on the signal readout circuit board; removing the first member and the second member; forming a transparent conductive film on a light-transmitting substrate; forming a second amorphous selenium film on the transparent conductive film; and bonding the first amorphous selenium film and the second amorphous selenium film by pressurization and heating to form a photoelectric conversion film.

[0018] A method for manufacturing a stacked solid-state image sensor according to one embodiment is characterized by comprising the steps of: assembling a signal readout circuit board in a package; covering the package and the signal readout circuit board with a first member having a first opening; fitting a second member having a second opening corresponding to a first film deposition region of a photoelectric conversion film formed on the signal readout circuit board into the first opening so as to surround the first film deposition region; forming a photoelectric conversion film on the signal readout circuit board; removing the second member; fitting a second member having a third opening corresponding to a second film deposition region of a transparent conductive film formed on the signal readout circuit board into the first opening so as to surround the second film deposition region; forming a transparent conductive film on the photoelectric conversion film; and removing the first member and the second member. [Effects of the Invention]

[0019] According to the present invention, it is possible to provide a jig used in manufacturing a solid-state image sensor equipped with a high-quality photoelectric conversion film. [Brief explanation of the drawing]

[0020] [Figure 1A]This is a schematic cross-sectional view showing an example of the configuration of a stacked solid-state image sensor according to the first embodiment of the present invention. [Figure 1B] This is a schematic cross-sectional view showing an example of the configuration of a fused solid-state image sensor according to the first embodiment of the present invention. [Figure 2A] These are schematic plan views and schematic cross-sectional views showing an example of the configuration of a jig according to the first embodiment of the present invention. [Figure 2B] These are schematic plan views and schematic cross-sectional views showing an example of the configuration of a jig according to the first embodiment of the present invention. [Figure 2C] This is a schematic perspective view showing an example of the configuration of a jig according to the first embodiment of the present invention. [Figure 2D] This is a schematic perspective view showing an example of the configuration of a jig according to the first embodiment of the present invention. [Figure 3] This flowchart shows an example of a method for manufacturing a stacked solid-state image sensor according to the first embodiment of the present invention. [Figure 4A] This is a schematic cross-sectional view showing an example of a method for manufacturing a stacked solid-state image sensor according to the first embodiment of the present invention. [Figure 4B] This is a schematic cross-sectional view showing an example of a method for manufacturing a stacked solid-state image sensor according to the first embodiment of the present invention. [Figure 4C] This is a schematic cross-sectional view showing an example of a method for manufacturing a stacked solid-state image sensor according to the first embodiment of the present invention. [Figure 4D] This is a schematic cross-sectional view showing an example of a method for manufacturing a stacked solid-state image sensor according to the first embodiment of the present invention. [Figure 4E] This is a schematic cross-sectional view showing an example of a method for manufacturing a stacked solid-state image sensor according to the first embodiment of the present invention. [Figure 4F] This is a schematic cross-sectional view showing an example of a method for manufacturing a stacked solid-state image sensor according to the first embodiment of the present invention. [Figure 5] This flowchart shows an example of a method for manufacturing a fused solid-state image sensor according to the first embodiment of the present invention. [Figure 6A] This is a schematic cross-sectional view showing an example of a method for manufacturing a fused solid-state image sensor according to the first embodiment of the present invention. [Figure 6B]This is a schematic cross-sectional view showing an example of a method for manufacturing a fused solid-state image sensor according to the first embodiment of the present invention. [Figure 6C] This is a schematic cross-sectional view showing an example of a method for manufacturing a fused solid-state image sensor according to the first embodiment of the present invention. [Figure 6D] This is a schematic cross-sectional view showing an example of a method for manufacturing a fused solid-state image sensor according to the first embodiment of the present invention. [Figure 6E] This is a schematic cross-sectional view showing an example of a method for manufacturing a fused solid-state image sensor according to the first embodiment of the present invention. [Figure 6F] This is a schematic cross-sectional view showing an example of a method for manufacturing a fused solid-state image sensor according to the first embodiment of the present invention. [Figure 7] This figure shows an example of a junction-type solid-state image sensor according to the first embodiment of the present invention. [Figure 8] This is a schematic cross-sectional view showing an example of the configuration of a stacked solid-state image sensor according to a second embodiment of the present invention. [Figure 9] This flowchart shows an example of a method for manufacturing a stacked solid-state image sensor according to a second embodiment of the present invention. [Figure 10A] This is a schematic cross-sectional view showing an example of a method for manufacturing a stacked solid-state image sensor according to a second embodiment of the present invention. [Figure 10B] This is a schematic cross-sectional view showing an example of a method for manufacturing a stacked solid-state image sensor according to a second embodiment of the present invention. [Figure 10C] This is a schematic cross-sectional view showing an example of a method for manufacturing a stacked solid-state image sensor according to a second embodiment of the present invention. [Figure 10D] This is a schematic cross-sectional view showing an example of a method for manufacturing a stacked solid-state image sensor according to a second embodiment of the present invention. [Figure 10E] This is a schematic cross-sectional view showing an example of a method for manufacturing a stacked solid-state image sensor according to a second embodiment of the present invention. [Figure 10F] This is a schematic cross-sectional view showing an example of a method for manufacturing a stacked solid-state image sensor according to a second embodiment of the present invention. [Figure 10G] This is a schematic cross-sectional view showing an example of a method for manufacturing a stacked solid-state image sensor according to a second embodiment of the present invention. [Figure 10H] This is a schematic cross-sectional view showing an example of a method for manufacturing a stacked solid-state image sensor according to a second embodiment of the present invention. [Figure 11] This figure shows an example of a conventional junction-type solid-state image sensor. [Modes for carrying out the invention]

[0021] Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings. In principle, identical components will be given the same reference numeral, and redundant explanations will be omitted. In each figure, for the sake of clarity, the aspect ratios of each component are exaggerated from their actual proportions. In this specification, "up" refers to the positive direction on the Z-axis of the coordinate axis representation shown in the drawings.

[0022] <First Embodiment> An example of the configuration of the jig 100 according to the first embodiment will be described with reference to Figures 1A to 2D. The jig 100 is, for example, a jig used when manufacturing the stacked solid-state image sensor 10A shown in Figure 1A. Alternatively, the jig 100 is, for example, a jig used when manufacturing the fused solid-state image sensor 10B shown in Figure 1B.

[0023] [Stacked Solid State Image Sensor] Referring to Figure 1A, an example of the configuration of a stacked solid-state image sensor 10A manufactured using the jig 100 according to the first embodiment will be briefly described.

[0024] The stacked solid-state image sensor 10A comprises a package 1, a signal readout circuit board 2 including a pixel area 2D, bonding wires 3, a photoelectric conversion film 4, and a transparent conductive film 5. The stacked solid-state image sensor 10A is connected to a power supply 7 via electrodes 6.

[0025] Package 1 may be a known package applicable in the art. Package 1 is electrically connected to the bonding pad portion of the signal readout circuit board 2 via bonding wires 3. Package 1 may have, for example, a length of 58.0 mm in the X-axis direction, a length of 48.0 mm in the Y-axis direction, and a thickness of 6.75 mm in the Z-axis direction.

[0026] The signal readout circuit board 2 is, for example, a substrate on which a CMOS (Complementary Metal Oxide Semiconductor) structure is formed on a silicon substrate. The signal readout circuit board 2 includes a pixel region 2D on which pixel electrodes are provided. Pixel electrodes are provided in correspondence with each pixel. The pixel electrodes are formed from metal films such as gold (Au), copper (Cu), aluminum (Al), tungsten (W), or molybdenum (Mo). An insulating film, such as silicon oxide (SiO2), is provided between the pixel electrodes.

[0027] One end of the bonding wire 3 is electrically connected to the bonding pad portion of the signal readout circuit board 2, and the other end is electrically connected to the electrode portion of the package 1. The bonding wire 3 is made of a conductive material such as gold (Au). For example, 940 bonding wires 3 may be provided in one package 1.

[0028] The photoelectric conversion film 4 is a photoelectric conversion portion in the stacked solid-state image sensor 10A and functions as a P-type semiconductor. The photoelectric conversion film 4 may be, for example, a crystalline selenium film or a HARP (High-gain Avalanche Rushing amorphous Photoconductor) film. If the photoelectric conversion film 4 has a film thickness of 0.1 μm or more, preferably 0.3 μm or more, sufficient sensitivity can be obtained across the entire visible light spectrum, thus enabling the realization of the stacked solid-state image sensor 10A. Furthermore, if the photoelectric conversion film 4 has a film thickness of 50 μm or less, preferably 15 μm or less, it can be formed with high sensitivity and without film thickness unevenness, which is preferable from the viewpoint of productivity.

[0029] The transparent conductive film 5 is located on the light incident side and is provided on the opposite side of the pixel electrode via the photoelectric conversion film 4. The transparent conductive film 5 is preferably formed from a light-transmitting material. Examples of light-transmitting materials include ITO (indium tin oxide), IZO (zinc tin oxide), AZO (aluminum-doped zinc oxide), SnO2 (tin oxide), and FTO (fluorine-doped tin oxide). The transparent conductive film 5 is preferably 5 nm or more and 30 nm or less in thickness.

[0030] The stacked solid-state image sensor 10A is not limited to the configuration shown in Figure 1A. For example, a gallium oxide film, a nickel oxide film, a cerium oxide film, etc., may be provided between the photoelectric conversion film 4 and the transparent conductive film 5. Also, a nickel oxide film, antimony triphosphate, etc., may be provided between the signal readout circuit board 2 and the photoelectric conversion film 4. For example, a crystal nucleus may be provided between the signal readout circuit board 2 and the photoelectric conversion film 4, or between the photoelectric conversion film 4 and the transparent conductive film 5.

[0031] [Jointed Solid State Image Sensor] Referring to Figure 1B, an example of the configuration of a bonded solid-state image sensor 10B manufactured using the jig 100 according to the first embodiment will be briefly described.

[0032] The junctional solid-state image sensor 10B comprises a package 1, a signal readout circuit board 2 including a pixel area 2D, bonding wires 3, a photoelectric conversion film 4, a transparent conductive film 5, and a light-transmitting substrate 8. The junctional solid-state image sensor 10B is connected to a power supply 7 and the transparent conductive film 5 via conductive wires.

[0033] The descriptions of package 1, signal readout circuit board 2, bonding wire 3, photoelectric conversion film 4, and transparent conductive film 5 have already been given, so redundant explanations will be omitted.

[0034] The translucent substrate 8 is on the light incident side and is provided on the opposite side from the signal readout circuit board 2 via the photoelectric conversion film 4. The translucent substrate 8 is preferably formed from a translucent material. Examples of such materials include glass, sapphire, and silicon. The material of the translucent substrate 8 is preferably appropriately selected in accordance with the material of the transparent conductive film 5.

[0035] The junction-type solid-state image sensor 10B is not limited to the configuration shown in Figure 1B. For example, a gallium oxide film, a nickel oxide film, or the like may be provided between the photoelectric conversion film 4 and the transparent conductive film 5. Also, a nickel oxide film or the like may be provided between the signal readout circuit board 2 and the photoelectric conversion film 4. For example, a crystal nucleus may be provided between the signal readout circuit board 2 and the photoelectric conversion film 4, or between the photoelectric conversion film 4 and the transparent conductive film 5.

[0036] The stacked solid-state image sensor 10A and fused solid-state image sensor 10B described above are manufactured using the jig 100 described below. By using the jig 100, it is possible to realize a stacked solid-state image sensor 10A and a fused solid-state image sensor 10B equipped with a high-quality photoelectric conversion film.

[0037] 〔jig〕 Referring to Figures 2A to 2D, an example of the configuration of the jig 100 according to the first embodiment will be described. In the first embodiment, the case in which the deposition area of ​​the photoelectric conversion film 4 and the deposition area of ​​the transparent conductive film 5 are equal will be described as an example.

[0038] The jig 100 comprises a first member 111 and a second member 112.

[0039] [First component] The first member 111 is provided so as to cover the package 1 and the signal readout circuit board 2 assembled in the package 1. In this case, the first member 111 covers the package 1 and the signal readout circuit board 2 so as to overlap with the bonding wire 3. This prevents the second member 112 from coming into contact with the bonding wire 3 when the second member 112 is fitted into the first opening 111H of the first member 111.

[0040] The first member 111 is attached to the package 1 by being attached to the side and top surface of the package 1 with, for example, a tape that is suitable for use in a vacuum and has excellent gas release properties (e.g., Kapton tape). The first member 111 is also attached to the package 1 by being fixed to the side and top surface of the package 1 by, for example, a structure with screws or a belt.

[0041] The first member 111 is preferably made of a material that has excellent processing accuracy, low gas emission in a vacuum, and heat resistance up to approximately 200°C, the crystallization temperature of selenium, as well as a certain hardness. Examples of such materials include stainless steel, aluminum, and copper.

[0042] The first member 111 has a length X in the X-axis direction. 111 However, it may be, for example, 62.7 mm. The first member 111 has a length Y in the Y-axis direction. 111 However, it may be, for example, 52.6 mm. The first member 111 has a length Z in the Z-axis direction. 111 However, for example, it could be 5.0 mm.

[0043] As shown in Figure 2C, the first member 111 has a first opening 111H. The length of the first opening 111H in the X-axis direction may be, for example, 28.2 mm. The length of the first opening 111H in the Y-axis direction may be, for example, 22.2 mm.

[0044] The first member 111 has a length X excluding the thicknesses A1 and A4 on the side surface of the package 1 in the X-axis direction.100B However, the length of package 1 in the X-axis direction X 100A Designed to be longer. Length X excluding thicknesses A1 and A4 on the side of package 1 in the X-axis direction. 100B This may be, for example, 58.7 mm. The length of the first member 111 excluding the thicknesses A1 and A4 on the side of package 1 in the X-axis direction X 100B The length of package 1 in the X-axis direction is X 100A Using this, it can be expressed by the following equation.

[0045]

number

[0046] The first member 111 has a length Y in the Y-axis direction, excluding the thicknesses B1 and B4 on the side surface of the package 1. 100B However, the length of package 1 in the Y-axis direction Y 100A Designed to be longer. Length Y excluding thicknesses B1 and B4 on the side of package 1 in the Y-axis direction. 100B This may be, for example, 48.6 mm. The length Y of the first member 111 excluding the thicknesses B1 and B4 on the side surface of package 1 in the Y-axis direction. 100B The length of package 1 in the Y-axis direction is Y 100A Using this, it can be expressed by the following equation.

[0047]

number

[0048] K X This is the addition coefficient of the first member 111 in the X-axis direction, and K Y This is the addition coefficient for the first member 111 in the Y-axis direction. The addition coefficient for the first member 111 refers to a value set to ensure that there is no misalignment in the dimensions of the first member 111 between the attachment of the package 1 and the subsequent film formation position. X ,K YIt is preferable that the thickness is between 0.1 mm and 0.8 mm. The length of the first member 111 excluding the thicknesses A1 and A4 on the side surface of package 1 in the X-axis direction X 100B The length of package 1 in the X-axis direction X 100A To make it slightly longer, or to reduce the length Y by subtracting the thicknesses B1 and B4 on the sides of package 1 in the Y-axis direction. 100B The length of package 1 in the Y-axis direction Y 100A By making it slightly longer, the first component 111 can be made easier to attach to the package 1, or easier to remove from the package 1.

[0049] Preferably, the thicknesses A1 and A4 of the first member 111 relative to the side surface of the package 1 in the X-axis direction are 1 mm or more and 3 mm or less. Furthermore, preferably, the thicknesses B1 and B4 of the first member 111 relative to the side surface of the package 1 in the Y-axis direction are 1 mm or more and 3 mm or less. Furthermore, preferably, the thickness C1 of the first member 111 relative to the top surface of the package 1 in the Z-axis direction is 0.5 mm or more and 3 mm or less. By having A1, A4, B1, and B4 all be equal, the processing accuracy when manufacturing the stacked solid-state image sensor 10A and the bonded solid-state image sensor 10B can be improved.

[0050] The first member 111 has a distance A2,A5 between the bonding pad portion of the signal readout circuit board 2 and the outer peripheral side surface of the second member 112 in the X-axis direction, which is 0.2 mm + K X More than 0.5mm+K X The following is preferable. Furthermore, the distances B2 and B5 between the bonding pad portion of the signal readout circuit board 2 and the outer peripheral surface of the second member 112 in the Y-axis direction of the first member 111 are 0.2 mm + K Y More than 0.5mm+K Y The following is preferable: A2 and A5 are 0.2 mm + K X More than 0.5mm+K X The following conditions apply, and also, B2 and B5 are 0.2mm + K Y More than 0.5mm+K YAs a result of the following, the second member 112 does not come into contact with the bonding pad portion, and each film can be formed on the pixel region 2D on the signal readout circuit board 2 without damaging the bonding pad portion or contacting the bonding wire 3.

[0051] In the first member 111, it is preferable that the distances A3 and A6 between the bonding pad portion of the signal readout circuit board 2 and the side surface of the package 1 in the X-axis direction are set appropriately. Furthermore, it is preferable that the distances B3 and B6 between the bonding pad portion of the signal readout circuit board 2 and the side surface of the package 1 in the Y-axis direction are set appropriately.

[0052] The length X1 of the first member 111, excluding the first opening 111H in the X-axis direction, may be, for example, 17.25 mm. The length X1 excluding the first opening 111H in the X-axis direction can be expressed by the following formula, using the thickness A1 of the package 1 relative to the side surface in the X-axis direction, the distance A2 between the bonding pad portion of the signal readout circuit board 2 and the outer peripheral side surface of the second member 112 in the X-axis direction, and the distance A3 between the bonding pad portion of the signal readout circuit board 2 and the side surface of the package 1 in the X-axis direction.

[0053]

number

[0054] The length X2 of the first member 111, excluding the first opening 111H in the X-axis direction, may be, for example, 17.25 mm. The length X2 excluding the first opening 111H in the X-axis direction can be expressed by the following formula, using the thickness A4 of the package 1 relative to the side surface in the X-axis direction, the distance A5 between the bonding pad portion of the signal readout circuit board 2 and the outer peripheral side surface of the second member 112 in the X-axis direction, and the distance A6 between the bonding pad portion of the signal readout circuit board 2 and the side surface of the package 1 in the X-axis direction.

[0055]

number

[0056] The length Y1 of the first member 111, excluding the first opening 111H in the Y-axis direction, may be, for example, 15.2 mm. The length Y1 excluding the first opening 111H in the Y-axis direction can be expressed by the following formula, using the thickness B1 of the package 1 relative to the side surface in the Y-axis direction, the distance B2 between the bonding pad portion of the signal readout circuit board 2 and the outer peripheral side surface of the second member 112 in the Y-axis direction, and the distance B3 between the bonding pad portion of the signal readout circuit board 2 and the side surface of the package 1 in the Y-axis direction.

[0057]

number

[0058] The length Y2 of the first member 111, excluding the first opening 111H in the Y-axis direction, may be, for example, 15.2 mm. The length Y2 excluding the first opening 111H in the Y-axis direction can be expressed by the following formula, using the thickness B4 of the package 1 relative to the side surface in the Y-axis direction, the distance B5 between the bonding pad portion of the signal readout circuit board 2 and the outer peripheral side surface of the second member 112 in the Y-axis direction, and the distance B6 between the bonding pad portion of the signal readout circuit board 2 and the side surface of the package 1 in the Y-axis direction.

[0059]

number

[0060] [Second component] The second member 112 is provided so as to fit into the first opening 111H of the first member 111 so as to surround the film deposition region S of the photoelectric conversion film 4. Since the first member 111 covers the package 1 and the signal readout circuit board 2 assembled in the package 1 so as to overlap with the bonding wires 3, the second member 112 is fitted into the first opening 111H of the first member 111 so as to surround the film deposition region S of the photoelectric conversion film 4 without coming into contact with the bonding wires 3.

[0061] The second member 112 is attached to the first opening 111H of the first member 111 by being attached to the first opening 111H of the first member 111, for example, by being a tape with excellent gas release properties that can be used in a vacuum. The second member 112 is attached to the first opening 111H of the first member 111 by being fixed to the first opening 111H of the first member 111, for example, by fastening with a screw or belt structure.

[0062] The second member 112 has a length X in the X-axis direction. 112 However, it may be, for example, 28.0 mm. The second member 112 has a length Y in the Y-axis direction. 112 However, it may be, for example, 22.0 mm. The second member 112 has a length Z in the Z-axis direction. 112 However, for example, it could be 5.0 mm.

[0063] Length X of the second member 112 in the X-axis direction 112 The length of package 1 in the X-axis direction is X 100A Using the distances A2 and A5 between the bonding pad portion of the signal readout circuit board 2 and the outer peripheral side surface of the second member 112 in the X-axis direction, and the distances A3 and A6 between the bonding pad portion of the signal readout circuit board 2 and the side surface of the package 1 in the X-axis direction, the following equation can be expressed.

[0064]

number

[0065] Length Y of the second member 112 in the Y-axis direction 112 The length of package 1 in the Y-axis direction is Y 100A Using the distances B2 and B5 between the bonding pad portion of the signal readout circuit board 2 and the outer peripheral side surface of the second member 112 in the Y-axis direction, and the distances B3 and B6 between the bonding pad portion of the signal readout circuit board 2 and the side surface of the package 1 in the Y-axis direction, the following equation can be expressed.

[0066]

number

[0067] L X L is the addition coefficient for the outer circumference of the second member 112 in the X-axis direction. Y L is the addition coefficient for the outer circumference of the second member 112 in the Y-axis direction. The addition coefficient for the outer circumference of the second member 112 refers to the gap when loading it into the first member 111. L is preferably 0.1 mm or more and 0.8 mm or less. If L is zero, it will be difficult for the worker to insert or remove the second member 112 from the first member 111, or to remove the first member 111 from the second member 112. Therefore, by setting L to 0.1 mm or more and 0.8 mm or less, it is possible to easily insert and remove the second member 112 from the first opening 111H of the first member 111, and it is also possible to reduce the error in the loading position of the jig 100 in the manufacturing process of the stacked solid-state image sensor 10A and the bonded solid-state image sensor 10B.

[0068] Length Z of the second member 112 in the Z-axis direction 112 The following equation can be expressed using the thickness C1 of the first member 111 relative to the upper surface of the package 1 in the Z-axis direction.

[0069]

number

[0070] The second member 112 is preferably formed from a material that is easy to process. Examples of such materials include Teflon (registered trademark) and plastic. If the second member 112 is formed from Teflon, for example, the contact surface with the signal readout circuit board 2 can be easily flattened, thus preventing scratches on the contact surface. Furthermore, the adhesion between the second member 112 and the signal readout circuit board 2 can be improved, thus preventing the film-forming material from leaking to the bonding wire 3 side through the contact surface.

[0071] As shown in Figure 2D, the second member 112 has a second opening 112H. The second opening 112H is designed according to the deposition region S of the photoelectric conversion film 4.

[0072] The second opening 112H has a length X in the X-axis direction. 113 However, it is designed to be slightly longer than the length SX of the deposition region S of the photoelectric conversion film 4 in the X-axis direction. 113 This may be, for example, 26.0 mm. The length of the second opening 112H in the X-axis direction X 113 This can be expressed by the following equation, using the length SX of the deposition region S of the photoelectric conversion film 4 in the X-axis direction.

[0073]

number

[0074] The second opening 112H has a length Y in the Y-axis direction. 113 However, it is designed to be slightly longer than the length SY of the deposition region S of the photoelectric conversion film 4 in the Y-axis direction. The length Y of the second aperture 112H in the Y-axis direction. 113 This may be, for example, 16.0 mm. The length of the second opening 112H in the Y-axis direction Y 113 The following equation can be expressed using the length SY of the deposition region S of the photoelectric conversion film 4 in the Y-axis direction.

[0075]

number

[0076] M X This is the addition coefficient for the inner circumference of the second member 112 in the X-axis direction, and M Y This is the addition coefficient for the inner circumference of the second member 112 in the Y-axis direction. The addition coefficient for the inner circumference of the second member 112 refers to the margin (overlap) of the film deposition area S relative to the pixel area 2D of the signal readout circuit board 2. X M Y It is preferable that the diameter is between 0.2 mm and 2.5 mm. XM Y This is set according to the deposition region S of the photoelectric conversion film 4 provided on the signal readout circuit board 2.

[0077] By using the jig 100 according to the first embodiment, stacked solid-state image sensors 10A and junctioned solid-state image sensors 10B equipped with a high-quality photoelectric conversion film 4 can be manufactured. In other words, problems such as increased fixed pattern noise and dark current during image acquisition, and significant deterioration of the image quality of the solid-state image sensor, which occur in the past due to discoloration, deterioration, or increase in crystal grain size of the photoelectric conversion film, do not occur. As a result, stacked solid-state image sensors 10A and junctioned solid-state image sensors 10B with low dark current and stable imaging characteristics with uniform output images can be realized.

[0078] [Manufacturing method for stacked solid-state image sensors] Referring to Figures 3 to 4F, an example of a method for manufacturing a stacked solid-state image sensor 10A using the jig 100 according to the first embodiment will be described. By performing the following steps S101 to S106 using the jig 100 according to the first embodiment, a stacked solid-state image sensor 10A with a high-quality photoelectric conversion film can be obtained. In the first embodiment, the case in which the deposition area of ​​the photoelectric conversion film 4 and the deposition area of ​​the transparent conductive film 5 are equal will be described as an example.

[0079] The details of each process will be explained sequentially below. Note that the same reference number is assigned to the same component, and the descriptions of the material, film thickness, etc. of each component are as previously stated, so redundant explanations will be omitted.

[0080] A method for manufacturing a stacked solid-state image sensor 10A includes the steps of: assembling a signal readout circuit board 2 into a package 1 (step S101); covering the package 1 and the signal readout circuit board 2 with a first member 111 having a first opening 111H (step S102); fitting a second member 112 having a second opening 112H corresponding to the film deposition region S of a photoelectric conversion film 4 formed on the signal readout circuit board 2 into the first opening 111H so as to surround the film deposition region S (step S103); forming a photoelectric conversion film 4 on the signal readout circuit board 2 (step S104); forming a transparent conductive film 5 on the photoelectric conversion film 4 (step S105); and removing the first member 111 and the second member 112 (step S106).

[0081] As shown in Figure 4A, in step S101, the worker assembles the signal readout circuit board 2 onto the package 1. First, the worker adheres the signal readout circuit board 2 to the package 1 as a die attach process. Then, as a wire bonding process, the worker connects the bonding pad portion of the signal readout circuit board 2 to the electrode portion of the package 1 with bonding wires 3.

[0082] By completing the die-attach and wire bonding processes before forming the photoelectric conversion film 4 on the signal readout circuit board 2, the photoelectric conversion film 4 does not need to be exposed to high temperatures of approximately 150 degrees Celsius for a certain period of time. This makes it possible to manufacture a stacked solid-state image sensor 10A with a high-quality photoelectric conversion film 4. Furthermore, it is possible to realize a stacked solid-state image sensor 10A with low dark current and stable imaging characteristics with uniform output images.

[0083] Next, as shown in Figure 4B, in step S102, the worker covers the package 1 and the signal readout circuit board 2 assembled in the package 1 with the first member 111, which is designed to fit the package 1. At this time, the worker covers the package 1 and the signal readout circuit board 2 assembled in the package 1 with the first member 111 so that the first member 111 overlaps with the bonding wire 3, so that the second member 112 does not come into contact with the bonding wire 3 when the second member 112 is fitted into the first opening 111H of the first member 111 in the next step. Then, the worker attaches the first member 111 to the side and top surface of the package 1 with tape that has excellent gas release properties and can be used in a vacuum. In this way, the first member 111 is attached to the package 1.

[0084] Next, as shown in Figure 4C, in step S103, the worker fits the second member 112, which has a second opening 112H corresponding to the film deposition area S of the photoelectric conversion film 4, into the first opening 111H of the first member 111 so as to surround the film deposition area S of the photoelectric conversion film 4. Then, the worker attaches the second member 112 to the first opening 111H of the first member 111 with tape that has excellent gas release properties and can be used in a vacuum. In this way, the second member 112 is attached to the first member 111.

[0085] Next, as shown in Figure 4D, in step S104, an amorphous selenium film with a thickness of 300 nm is formed on the signal readout circuit board 2, for example, by vacuum deposition. Then, the entire assembly, including the package 1, is heated on a hot plate at approximately 160 degrees Celsius for 1 minute to crystallize the amorphous selenium film and form a crystalline selenium film as the photoelectric conversion film 4. At this time, a crystal nucleus consisting of a tellurium film with a thickness of 0.2 nm may be formed between the signal readout circuit board 2 and the photoelectric conversion film 4, for example, by vacuum deposition.

[0086] If the materials of the first member 11 and the second member 112 do not have sufficient heat resistance, an amorphous selenium film with a thickness of 300 nm may be formed on the signal readout circuit board 2, for example, by vacuum deposition. After that, the operator may remove the first member 11 and the second member 112, and then heat the entire package 1, including the selenium film, on a hot plate at approximately 160 degrees Celsius for 1 minute.

[0087] Next, as shown in Figure 4E, in step S105, for example, DC sputtering (oxygen gas partial pressure: 7.6 × 10⁻¹⁰) is applied to the photoelectric conversion film 4. -3 Pa, partial pressure of argon gas: 6.0 × 10⁻⁶ -1 A 10 nm thick ITO film is formed as the transparent conductive film 5 by Pa). At this time, a crystal nucleus consisting of a 0.2 nm thick tellurium film may be formed between the photoelectric conversion film 4 and the transparent conductive film 5, for example by vacuum deposition.

[0088] Next, as shown in Figure 4F, in step S106, the worker removes the first member 11 and the second member 112 and attaches a small, pin-shaped electrode 6 to a portion of the transparent conductive film 5 that does not affect the image output using a conductive adhesive. Then, the worker connects the small, pin-shaped electrode 6 to the power supply 7 of the signal output circuit using a conductive wire or the like to supply power to the stacked solid-state image sensor 10A and to output an image from the stacked solid-state image sensor 10A.

[0089] By going through each of the optional steps described above, a stacked solid-state image sensor 10A as shown in Figure 1A can be manufactured. By using the jig 100 according to the first embodiment, a photoelectric conversion film 4 can be formed on the signal readout circuit board 2 after the die attach process and wire bonding process have been completed, thus eliminating the need to expose the photoelectric conversion film 4 to a high temperature of approximately 150 degrees Celsius for a certain period of time. This avoids the problem that, for example, if the photoelectric conversion film 4 is formed from a crystalline selenium film, the inherent heat resistance of selenium can cause it to become unable to withstand the heating during assembly, leading to an increase in the crystal grain size of the crystalline selenium film. Furthermore, if the photoelectric conversion film 4 is formed from an amorphous selenium film, the problem of abnormal crystal growth can be avoided. In short, by using the jig 100 according to the first embodiment, a stacked solid-state image sensor 10A equipped with a high-quality photoelectric conversion film 4 can be manufactured.

[0090] [Manufacturing method for junctional solid-state image sensors] Referring to Figures 5 to 6F, an example of a method for manufacturing a junction-type solid-state image sensor 10B using the jig 100 according to the first embodiment will be described. By performing the following steps S201 to S208 using the jig 100 according to the first embodiment, a junction-type solid-state image sensor 10B having a high-quality photoelectric conversion film can be obtained. In the first embodiment, the case in which the film deposition area of ​​the photoelectric conversion film and the film deposition area of ​​the transparent conductive film are equal will be described as an example.

[0091] The details of each process will be explained sequentially below. Note that the same reference number is assigned to the same component, and the descriptions of the material, film thickness, etc. of each component are as previously stated, so redundant explanations will be omitted.

[0092] The manufacturing method for the junction type solid-state image sensor 10B includes the steps of: assembling the signal readout circuit board 2 into the package 1 (step S201); covering the package 1 and the signal readout circuit board 2 with a first member 111 having a first opening 111H (step S202); fitting a second member 112 having a second opening 112H corresponding to the film deposition region S of the photoelectric conversion film 4 formed on the signal readout circuit board 2 into the first opening 111H so as to surround the film deposition region S (step S203); and the signal readout circuit board The process includes the steps of forming a first amorphous selenium film 4A on a plate 2 (step S204), removing the first member 111 and the second member 112 (step S205), forming a transparent conductive film 5 on a translucent substrate 8 (step S206), forming a second amorphous selenium film 4B on the transparent conductive film 5 (step S207), and joining the first amorphous selenium film 4A and the second amorphous selenium film 4B by pressurization and heating to form a photoelectric conversion film 4 (step S208).

[0093] As shown in Figure 6A, in step S201, the worker assembles the signal readout circuit board 2 onto the package 1. First, the worker adheres the signal readout circuit board 2 to the package 1 as a die attach process. Then, as a wire bonding process, the worker connects the bonding pad portion of the signal readout circuit board 2 to the electrode portion of the package 1 with bonding wires 3.

[0094] By completing the die-attach and wire bonding processes before forming the photoelectric conversion film 4 on the signal readout circuit board 2, the photoelectric conversion film 4 does not need to be exposed to high temperatures of approximately 150 degrees Celsius for a certain period of time. This makes it possible to manufacture a junction-type solid-state image sensor 10B with a high-quality photoelectric conversion film 4. Furthermore, it is possible to realize a junction-type solid-state image sensor 10B with low dark current and stable imaging characteristics with uniform output images.

[0095] Next, as shown in Figure 6B, in step S202, the worker covers package 1 and the signal readout circuit board 2 assembled in package 1 with the first member 111, which is designed to fit package 1. At this time, the worker covers package 1 and the signal readout circuit board 2 assembled in package 1 with the first member 111 so that the first member 111 overlaps with the bonding wire 3, so that the second member 112 does not come into contact with the bonding wire 3 when the second member 112 is fitted into the first opening 111H of the first member 111 in the next step. Then, the worker attaches the first member 111 to the side and top surface of package 1 with tape that has excellent gas release properties and can be used in a vacuum. In this way, the first member 111 is attached to package 1.

[0096] Next, as shown in Figure 6C, in step S203, the worker fits the second member 112, which has a second opening 112H corresponding to the film deposition area S of the photoelectric conversion film 4, into the first opening 111H of the first member 111 so as to surround the film deposition area S of the photoelectric conversion film 4. Then, the worker attaches the second member 112 to the first opening 111H of the first member 111 with tape that has excellent gas release properties and can be used in a vacuum. In this way, the second member 112 is attached to the first member 111.

[0097] Next, as shown in Figure 6D, in step S204, the operator forms a first amorphous selenium film 4A with a thickness of 300 nm on the signal readout circuit board 2, for example, by vacuum deposition. At this time, a crystal nucleus consisting of a tellurium film with a thickness of 0.2 nm may be formed between the signal readout circuit board 2 and the photoelectric conversion film 4, for example, by vacuum deposition.

[0098] Next, as shown in Figure 6E, in step S205, for example, DC sputtering (oxygen gas partial pressure: 7.6 × 10) is applied to the translucent substrate 8. -3 Pa, partial pressure of argon gas: 6.0 × 10⁻⁶ -1A 10 nm thick ITO film is formed as a transparent conductive film 5 by Pa). Then, a second amorphous selenium film 4B with a thickness of 300 nm is formed on the transparent conductive film 5, for example by vacuum deposition. At this time, a crystal nucleus consisting of a tellurium film with a thickness of 0.2 nm may be formed between the second amorphous selenium film 4B and the transparent conductive film 5, for example by vacuum deposition. Then, the operator removes the first member 11 and the second member 112, and by pressurizing and heating, the first amorphous selenium film 4A formed on the signal readout circuit board 2 and the second amorphous selenium film 4B formed on the translucent substrate 8 are joined together, and the first amorphous selenium film 4A and the second amorphous selenium film 4B are crystallized to form a crystalline selenium film as the photoelectric conversion film 4.

[0099] For details on the joining structure process, please refer to the following literature, for example. Miyagawa et al., NHK Science & Technology Research Laboratories, "High Magnification Increase of Crystalline Selenium Photoelectric Conversion Films by Bonding Structure for High Sensitivity Improvement of Solid-State Imaging Devices," Proceedings of the 2020 Winter Conference of the Institute of Image Information and Television Engineers, 32E-1, 2020.

[0100] Next, as shown in Figure 6F, in step S206, the worker attaches a conductive wire to the end of the transparent conductive film 5 using a conductive adhesive, and connects the transparent conductive film 5 to the power supply 7 of the signal output circuit with the conductive wire to supply power to the fused solid-state image sensor 10B and to output an image from the fused solid-state image sensor 10B.

[0101] By going through each of the optional steps described above, a junction-type solid-state image sensor 10B as shown in Figure 1B can be manufactured. By using the jig 100 according to the first embodiment, a photoelectric conversion film 4 can be formed on the signal readout circuit board 2 after the die attach process and wire bonding process have been completed, thus eliminating the need to expose the photoelectric conversion film 4 to a high temperature of approximately 150 degrees Celsius for a certain period of time. This avoids the problem that, for example, if the photoelectric conversion film 4 is formed from a crystalline selenium film, the inherent heat resistance of selenium can cause it to become unable to withstand the heating during assembly, leading to an increase in the grain size of the crystalline selenium film. Furthermore, if the photoelectric conversion film 4 is formed from an amorphous selenium film, the problem of abnormal crystal growth can be avoided. In other words, by using the jig 100 according to the first embodiment, a junction-type solid-state image sensor 10B equipped with a high-quality photoelectric conversion film 4 can be manufactured, as shown in Figure 7.

[0102] <Second Embodiment> Referring to Figures 8 to 10H, an example of a method for manufacturing a stacked solid-state image sensor 20 using the jig 200 according to the second embodiment will be described.

[0103] The difference between the manufacturing method of the stacked solid-state image sensor 20 using the jig 200 according to the second embodiment and the manufacturing method of the stacked solid-state image sensor 10A using the jig 100 according to the first embodiment is that the manufacturing method of the stacked solid-state image sensor 10A using the jig 100 according to the first embodiment is applied when the deposition region of the photoelectric conversion film 4 and the deposition region of the transparent conductive film 5 are the same, whereas the manufacturing method of the stacked solid-state image sensor 20 using the jig 200 according to the second embodiment is applied when the deposition region of the photoelectric conversion film 4 and the deposition region of the transparent conductive film 5 are different. Hereinafter, redundant explanations of parts that overlap with the first embodiment will be omitted.

[0104] First, we will briefly describe the stacked solid-state image sensor 20 manufactured using the jig 200 according to the second embodiment, and the configuration of the jig 200 according to the second embodiment.

[0105] [Stacked Solid State Image Sensor] Referring to Figure 8, an example of the configuration of a stacked solid-state image sensor 20 manufactured using the jig 200 according to the second embodiment will be briefly described.

[0106] The stacked solid-state image sensor 20 comprises a package 1, a signal readout circuit board 2 including a pixel area 2D, bonding wires 3, a photoelectric conversion film 4, and a transparent conductive film 5. The stacked solid-state image sensor 20 is supplied with voltage from a voltage supply unit 9.

[0107] The transparent conductive film 5 is provided so as to cover not only the upper surface of the photoelectric conversion film 4 but also the sides of the photoelectric conversion film 4. Preferably, the film thickness of the transparent conductive film 5 covering the upper surface of the photoelectric conversion film 4 is 5 nm or more and 30 nm or less. Preferably, the film thickness of the transparent conductive film 5 covering the sides of the photoelectric conversion film 4 is 5 nm or more and 30 nm or less.

[0108] The descriptions of package 1, signal readout circuit board 2, bonding wire 3, and photoelectric conversion film 4 have already been given, so redundant explanations will be omitted.

[0109] The stacked solid-state image sensor 20 is not limited to the configuration shown in Figure 8. For example, a gallium oxide film, a nickel oxide film, or the like may be provided between the photoelectric conversion film 4 and the transparent conductive film 5. For example, crystal nuclei may be provided between the signal readout circuit board 2 and the photoelectric conversion film 4, or between the photoelectric conversion film 4 and the transparent conductive film 5.

[0110] The stacked solid-state image sensor 20 described above is manufactured using the jig 200 described below. This makes it possible to realize a stacked solid-state image sensor 20 equipped with a high-quality photoelectric conversion film.

[0111] 〔jig〕 The jig 100 comprises a first member 111, and second members 112_1 and 112_2.

[0112] The first member 111 has the same configuration as the first member 111 provided in the jig 100 according to the first embodiment. The second member 112_1 has the same configuration as the second member 112 provided in the jig 100 according to the first embodiment. The first member 111 and the second member 112_1 have been described previously, and any redundant explanations will be omitted.

[0113] The second member 112_2 is provided so as to fit into the first opening 111H of the first member 111 so as to surround the film deposition area of ​​the transparent conductive film 5. Since the first member 111 covers the package 1 and the signal readout circuit board 2 assembled in the package 1 so as to overlap with the bonding wires 3, the second member 112_2 is fitted into the first opening 111H of the first member 111 so as to surround the film deposition area of ​​the transparent conductive film 5 without coming into contact with the bonding wires 3 (see Figure 10F).

[0114] The second member 112_2 is attached to the first opening 111H of the first member 111 by being attached to the first opening 111H of the first member 111, for example, by being a tape with excellent gas release properties that can be used in a vacuum. The second member 112_2 is attached to the first opening 111H of the first member 111 by being fixed to the first opening 111H of the first member 111, for example, by fastening with a structure that includes screws or a belt.

[0115] The second member 112_2 may have a length in the X-axis direction of, for example, 28.0 mm. The second member 112_2 may have a length in the Y-axis direction of, for example, 22.0 mm. The second member 112_2 may have a length in the Z-axis direction of, for example, 5.0 mm.

[0116] The second member 112_2 is preferably made of a material that is easy to process. Examples of such materials include Teflon and plastic. If the second member 112_2 is made of Teflon, for example, the contact surface with the signal readout circuit board 2 can be easily flattened, thus preventing scratches on the contact surface. Furthermore, the adhesion between the second member 112_2 and the signal readout circuit board 2 can be improved, thus preventing the film-forming material from leaking to the bonding wire 3 side through the contact surface.

[0117] The second member 112_2 has a third opening 112H'. The third opening 112H' is designed according to the deposition region of the transparent conductive film 5. The deposition region of the transparent conductive film 5 is at least different from the deposition region S of the photoelectric conversion film 4, and is not particularly limited. For example, the deposition region of the transparent conductive film 5 may be a region covering the top surface of the photoelectric conversion film 4 and one side surface of the photoelectric conversion film 4. For example, the deposition region of the transparent conductive film 5 may be a region covering the top surface of the photoelectric conversion film 4 and all sides of the photoelectric conversion film 4.

[0118] The third opening 112H' is designed such that its length in the X-axis direction is slightly longer than the length of the deposition area of ​​the transparent conductive film 5 in the X-axis direction. The length of the third opening 112H' in the X-axis direction may be, for example, 26.2 mm.

[0119] The third opening 112H' is designed such that its length in the Y-axis direction is slightly longer than the length of the film deposition area of ​​the transparent conductive film 5 in the Y-axis direction. The length of the third opening 112H' in the Y-axis direction may be, for example, 18.0 mm.

[0120] By using the jig 200 according to the second embodiment, a stacked solid-state image sensor 20 equipped with a high-quality photoelectric conversion film 4 can be manufactured. In other words, unlike conventional methods, problems such as increased fixed pattern noise and dark current during image acquisition due to discoloration, deterioration, or increase in crystal grain size of the photoelectric conversion film, and a significant deterioration in the image quality of the solid-state image sensor, do not occur. As a result, a stacked solid-state image sensor 20 with low dark current and stable imaging characteristics with uniform output images can be realized.

[0121] [Manufacturing method for stacked solid-state image sensors] An example of a method for manufacturing a stacked solid-state image sensor 20 using the jig 200 according to the second embodiment will be described with reference to Figures 8, 9, and 10A to 10H. By performing the following steps S301 to S308 using the jig 200 according to the second embodiment, a stacked solid-state image sensor 20 having a high-quality photoelectric conversion film can be obtained. In the second embodiment, an example will be given of the case where the film deposition region of the photoelectric conversion film 4 and the film deposition region of the transparent conductive film 5 are different.

[0122] The details of each process will be explained sequentially below. Note that the same reference number is assigned to the same component, and the descriptions of the material, film thickness, etc. of each component are as previously stated, so redundant explanations will be omitted.

[0123] The manufacturing method for the stacked solid-state image sensor 20 includes the steps of: assembling the signal readout circuit board 2 into the package 1 (step S301); covering the package 1 and the signal readout circuit board 2 with a first member 111 having a first opening 111H (step S302); fitting a second member 112_1 having a second opening 112H corresponding to the first film deposition region S of the photoelectric conversion film 4 formed on the signal readout circuit board 2 into the first opening 111H so as to surround the first film deposition region S (step S303); and the signal readout circuit board 2 The process includes the steps of forming a photoelectric conversion film 4 (step S304), removing the second member 112_1 (step S305), fitting the second member 112_2, which has a third opening 112H' corresponding to the second film deposition region of the transparent conductive film 5 formed on the signal readout circuit board 2, into the first opening 111H so as to surround the second film deposition region (step S306), forming the transparent conductive film 5 on the photoelectric conversion film 4 (step S307), and removing the first member 111 and the second member 112_2 (step S308).

[0124] As shown in Figure 10A, in step S301, the worker assembles the signal readout circuit board 2, which has the voltage supply unit 9 pre-installed, onto the package 1. First, as a die attach process, the worker adheres the signal readout circuit board 2, which has the voltage supply unit 9 pre-installed, to the package 1. Then, as a wire bonding process, the worker connects the bonding pad portion of the signal readout circuit board 2, which has the voltage supply unit 9 pre-installed, to the electrode portion of the package 1 with bonding wires 3.

[0125] By completing the die-attach and wire bonding processes before forming the photoelectric conversion film 4 on the signal readout circuit board 2, which is pre-equipped with a voltage supply unit 9, the photoelectric conversion film 4 does not need to be exposed to high temperatures of approximately 150 degrees Celsius for a certain period of time. This makes it possible to manufacture a stacked solid-state image sensor 20 with a high-quality photoelectric conversion film 4. Furthermore, it is possible to realize a stacked solid-state image sensor 20 with low dark current and stable imaging characteristics with uniform output images.

[0126] Next, as shown in Figure 10B, in step S302, the worker covers the package 1 and the signal readout circuit board 2 assembled in the package 1 with the first member 111, which is designed to fit the package 1. At this time, the worker covers the package 1 and the signal readout circuit board 2 assembled in the package 1 with the first member 111 so that the first member 111 overlaps with the bonding wire 3, so that the second member 112_1 does not come into contact with the bonding wire 3 when the second member 112_1 is fitted into the first opening 111H of the first member 111 in the next step. Then, the worker attaches the first member 111 to the side and top surface of the package 1 with tape that has excellent gas release properties and can be used in a vacuum. In this way, the first member 111 is attached to the package 1.

[0127] Next, as shown in Figure 10C, in step S303, the worker fits the second member 112_1, which has a second opening 112H corresponding to the film deposition area S of the photoelectric conversion film 4, into the first opening 111H of the first member 111 so as to surround the film deposition area S of the photoelectric conversion film 4. Then, the worker attaches the second member 112_1 to the first opening 111H of the first member 111 with tape that has excellent gas release properties and can be used in a vacuum. In this way, the second member 112_1 is attached to the first member 111.

[0128] Next, as shown in Figure 10D, in step S304, the operator forms an amorphous selenium film with a thickness of 300 nm on the signal readout circuit board 2, for example, by vacuum deposition. Then, the entire assembly, including the package 1, is heated on a hot plate at approximately 160 degrees Celsius for 1 minute to crystallize the amorphous selenium film and form a crystalline selenium film as the photoelectric conversion film 4. At this time, a crystal nucleus consisting of a tellurium film with a thickness of 0.2 nm may be formed between the signal readout circuit board 2 and the photoelectric conversion film 4, for example, by vacuum deposition.

[0129] If the materials of the first member 111 and the second member 112_1 do not have sufficient heat resistance, an amorphous selenium film with a thickness of 300 nm may be formed on the signal readout circuit board 2, for example, by vacuum deposition. After that, the operator may remove the first member 11 and the second member 112_1, and then heat the entire package 1, including the selenium film, on a hot plate at approximately 160 degrees Celsius for 1 minute.

[0130] Next, as shown in Figure 10E, in step S305, the worker removes the second member 112_1.

[0131] Next, as shown in Figure 10F, in step S306, the worker replaces the removed second member 112_1 with a new second member 112_2, and fits the second member 112_2, which has a third opening 112H' corresponding to the film deposition area of ​​the transparent conductive film 5, into the first opening 111H of the first member 111 so as to surround the film deposition area of ​​the transparent conductive film 5. Then, the worker attaches the second member 112_2 to the first opening 111H of the first member 111 with tape that has excellent gas release properties and can be used in a vacuum. In this way, the second member 112_2 is attached to the first member 111.

[0132] Then, covering the top surface and one of the sides of the photoelectric conversion film 4, for example, a DC sputtering method (oxygen gas partial pressure: 7.6 × 10⁻¹⁰) is used. -3 Pa, partial pressure of argon gas: 6.0 × 10⁻⁶ -1 A 10 nm thick ITO film is formed as the transparent conductive film 5 by Pa). At this time, a crystal nucleus consisting of a 0.2 nm thick tellurium film may be formed between the photoelectric conversion film 4 and the transparent conductive film 5, for example by vacuum deposition.

[0133] Next, as shown in Figure 10G, in step S307, the worker removes the second member 112_2.

[0134] Next, as shown in Figure 10H, in step S308, the operator removes the first component 111. The stacked solid-state image sensor 20 receives voltage from the voltage supply unit 9, which is connected to lead wires, and outputs an image.

[0135] By going through each of the optional steps described above, a stacked solid-state image sensor 20 as shown in Figure 8 can be manufactured. By using the jig 200 according to the second embodiment, a photoelectric conversion film 4 can be formed on the signal readout circuit board 2 after the die attach process and wire bonding process have been completed, thus eliminating the need to expose the photoelectric conversion film 4 to a high temperature of approximately 150 degrees Celsius for a certain period of time. This avoids the problem that, for example, if the photoelectric conversion film 4 is formed from a crystalline selenium film, the inherent heat resistance of selenium can cause it to become unable to withstand the heating during assembly, leading to an increase in the crystal grain size of the crystalline selenium film. Furthermore, if the photoelectric conversion film 4 is formed from an amorphous selenium film, the problem of abnormal crystal growth can be avoided. In short, by using the jig 200 according to the second embodiment, a stacked solid-state image sensor 20 equipped with a high-quality photoelectric conversion film 4 can be manufactured.

[0136] <Variation> In this embodiment, the case where the outer shape of the first member 111 is rectangular was given as an example, but the outer shape of the first member 111 is not limited to this. For example, the outer shape of the first member 111 may be circular, polygonal, or the like.

[0137] Furthermore, although this embodiment has described the case where the shapes of the first opening 111H, the second opening 112H, and the third opening 112H' are rectangular, the shapes of the first opening 111H, the second opening 112H, and the third opening 112H' are not limited to this. For example, the shapes of the first opening 111H, the second opening 112H, and the third opening 112H' may be circular, polygonal, or the like.

[0138] Furthermore, although this embodiment describes the case where the second member 112_1 and the second member 112_2 are separate entities as an example, the second member 112_1 and the second member 112_2 may have a configuration that allows them to be attached to or detached from each other, and may be configured to temporarily become one entity and temporarily become separate entities.

[0139] The present invention is not limited to the embodiments and modifications described above. For example, the various processes described above may be performed not only in chronological order as described, but also in parallel or individually, depending on the processing capacity of the apparatus performing the processes or as necessary. Other modifications are possible as appropriate without departing from the spirit of the present invention.

[0140] Although the embodiments described above are representative examples, it will be apparent to those skilled in the art that many modifications and substitutions are possible within the spirit and scope of this disclosure. Therefore, the present invention should not be construed as being limited by the embodiments described above, and various modifications or changes are possible without departing from the claims. It is possible to combine multiple steps described in the flowchart of the embodiments into one, or to divide one step into multiple steps. [Explanation of Symbols]

[0141] 1 package 2. Signal readout circuit board 2D pixel area 3 Bonding wire 4 Photoelectric conversion film 4A First Amorphous Selenium Film 4B Second Amorphous Selenium Film 5 Transparent conductive film 6 electrodes 7 Power supply 8 Translucent substrate 9. Voltage supply unit 10A Stacked Solid State Image Sensor 10B junction type solid-state image sensor 20 Stacked Solid State Image Sensors 100 jigs 111 First Member 111H 1st opening 112,112_1,112_2 Second member 112H 2nd opening 112H' 3rd opening 200 jigs

Claims

1. A jig used in the manufacturing of solid-state image sensors, A first member having a first opening and covering the package and the signal readout circuit board assembled in the package, The signal readout circuit board has a second opening corresponding to the film deposition region of the photoelectric conversion film, and a second member that fits into the first opening so as to surround the film deposition region, A jig equipped with the following features.

2. The first member is, The length of the package in the X-axis direction, excluding the thickness of the side surface, is longer than the length of the package in the X-axis direction. The length of the package in the Y-axis direction, excluding the thickness of the side surface, is longer than the length of the package in the Y-axis direction. The jig according to claim 1.

3. The first member is, Length X in the X-axis direction excluding the first opening １ or X ２ However, the thickness A of the side surface of the package in the X-axis direction １ Or A ４ The distance A between the bonding pad portion of the signal readout circuit board and the outer peripheral surface of the second member in the X-axis direction. ２ Or A ５ , and the distance A between the bonding pad portion and the side surface of the package in the X-axis direction. ３ Or A ６ It is designed to satisfy the following equation (1), 6 １ = A １ +A ２ +A ３ 、または、X ２ = A ４ +A ５ +A ６ (1) Length Y in the Y-axis direction excluding the first opening １ or Y ２ However, the thickness B of the package relative to the side surface in the Y-axis direction １ or B ４ The distance B between the bonding pad portion of the signal readout circuit board and the outer peripheral surface of the second member in the Y-axis direction. ２ or B ５ , and the distance B between the bonding pad portion and the side surface of the package in the Y-axis direction. ３ or B ６ Using this, it is designed to satisfy equation (2) below. Y １ =B １ +B ２ +B ３ 、または、Y ２ =B ４ +B ５ +B ６ (2) The jig according to claim 1 or 2.

4. The second member is, Length X of the second member in the X-axis direction １１２ However, A １ and A ４ Length X of the first member 111 excluding the part １００Ｂ , A ２ , A ３ , A ５ , A ６ , the addition coefficient K of the first member Ｘ Package length X １００Ａ , and the additional coefficient L on the outer circumference of the second member Ｘ It is designed to satisfy the following equation (3), X １１２ =X １００Ａ +K Ｘ -(A ２ +A ３ +A ５ +A ６ )-L Ｘ =(X １００Ｂ -K Ｘ )+K Ｘ -(A ２ +A ３ +A ５ +A ６ )-L Ｘ (3) Length Y of the second member in the Y-axis direction １１２ However, B １ and B ４ Length Y of the first member 111 excluding the part １００Ｂ , the above B ２ , the above B ３ , the above B ５ , the above B ６ , the addition coefficient K of the first member Ｙ Package length Y １００Ａ , and the additional coefficient L on the outer circumference of the second member Ｙ Using this, it is designed to satisfy equation (4), Y １１２ =Y １００Ａ +K Ｙ -(B ２ +B ３ +B ５ +B ６ )-L Ｙ =(Y １００Ｂ -K Ｙ )+K Ｙ -(B ２ +B ３ +B ５ +B ６ )-L Ｙ (4) The jig according to claim 3.

5. The second member is, The length of the second opening in the X-axis direction is longer than the length of the deposition region of the photoelectric conversion film in the X-axis direction. The length of the second opening in the Y-axis direction is longer than the length of the film deposition region of the photoelectric conversion film in the Y-axis direction. The jig according to any one of claims 1 to 4.

6. The first member covers the package and the signal readout circuit board so as to overlap with the bonding wires connected to the bonding pad portion of the signal readout circuit board and the electrode portion of the package. The jig according to any one of claims 1 to 5.

7. A jig used in the manufacturing of solid-state image sensors, A first member having a first opening and covering the package and the signal readout circuit board assembled in the package, A second member having a second opening corresponding to a first film deposition region of a photoelectric conversion film provided on the signal readout circuit board, and fitting into the first opening so as to surround the first film deposition region, or a second member having a third opening corresponding to a second film deposition region of a transparent conductive film provided on the signal readout circuit board, and fitting into the first opening so as to surround the second film deposition region, A jig equipped with the following features.

8. The process involves assembling the signal readout circuit board into the package, A step of covering the package and the signal readout circuit board with a first member having a first opening, A step of fitting a second member having a second opening corresponding to the film deposition region of the photoelectric conversion film formed on the signal readout circuit board into the first opening so as to surround the film deposition region, The process of forming a photoelectric conversion film on the signal readout circuit board, The process of forming a transparent conductive film on the photoelectric conversion film, The steps of removing the first member and the second member, A method for manufacturing a stacked solid-state image sensor, including the following.

9. The process involves assembling the signal readout circuit board into the package, A step of covering the package and the signal readout circuit board with a first member having a first opening, A step of fitting a second member having a second opening corresponding to the film deposition region of the photoelectric conversion film formed on the signal readout circuit board into the first opening so as to surround the film deposition region, The process involves forming a first amorphous selenium film on the signal readout circuit board, The steps of removing the first member and the second member, A process of forming a transparent conductive film on a light-transmitting substrate, The steps include forming a second amorphous selenium film on the transparent conductive film, A step of forming a photoelectric conversion film by joining the first amorphous selenium film and the second amorphous selenium film by pressurizing and heating, A method for manufacturing a junction-type solid-state image sensor, including the method described above.

10. The process involves assembling the signal readout circuit board into the package, A step of covering the package and the signal readout circuit board with a first member having a first opening, A step of fitting a second member having a second opening corresponding to a first film deposition region of a photoelectric conversion film formed on the signal readout circuit board into the first opening so as to surround the first film deposition region, The process of forming a photoelectric conversion film on the signal readout circuit board, The process of removing the second member, A step of fitting a second member having a third opening corresponding to a second film deposition region of a transparent conductive film formed on the signal readout circuit board into the first opening so as to surround the second film deposition region, The process of forming a transparent conductive film on the photoelectric conversion film, The steps of removing the first member and the second member, A method for manufacturing a stacked solid-state image sensor, including the following.

Images