Faraday panel

Abstract

An exemplary semiconductor processing chamber faceplate can include a body having a first surface and a second surface opposite the first surface. The body can define a plurality of apertures through one or both of the first surface and the second surface. The faceplate can include a heater disposed within the body. The faceplate can include a first RF mesh disposed between the heater and the first surface. The faceplate can include a second RF mesh disposed between the heater and the second surface. The first RF mesh and the second RF mesh can be coupled together to form a Faraday cage around the heater.

Description

Technical Field

[0001] Cross - Reference to Related Applications

[0001] This application claims the benefit and priority of U.S. Patent Application No. 17 / 979,572, filed on November 4, 2022, entitled "Faraday Faceplate", the entire disclosure of which is incorporated herein by reference.

[0002]

[0002] This technology relates to semiconductor processing equipment. More particularly, this technology relates to semiconductor chamber components and methods of substrate processing.

Background Art

[0003]

[0003] Plasma is used in various operations during substrate processing. In some applications, plasma is intended to be generated only under the faceplate during substrate processing within the processing region of the substrate processing system. However, unwanted plasma (referred to as parasitic plasma) can inadvertently be generated at locations outside the processing region. This parasitic plasma can cause various problems, including an increased risk of substrate contamination, temperature non - uniformity across the substrate, and failure of certain components of the substrate processing system.

[0004]

[0004] Therefore, minimizing parasitic plasma is beneficial to the substrate processing system.

Summary of the Invention

[0005]

[0005] An exemplary faceplate of a semiconductor processing chamber can include a body having a first surface and a second surface opposite the first surface. The body can define a plurality of apertures that penetrate one or both of the first surface and the second surface. The faceplate can include a heater disposed inside the body. The faceplate can include a first RF mesh disposed between the heater and the first surface. The faceplate can include a second RF mesh disposed between the heater and the second surface. The first RF mesh and the second RF mesh can be connected together to form a Faraday cage around the heater.

[0006]

[0006] In some embodiments, the faceplate may include one or more conduits located inside the body. One or more conduits are fluidly connected to a plurality of openings. One or more conduits may form a recursive pattern that distributes gas radially outward around an area of ​​the faceplate. The body may include a first support for securing a heater to a first conductive mesh. The body may include a second support for securing a heater to a second conductive mesh. A portion of the first support may penetrate a first surface of the body. An insulating sleeve may surround the portion of the first support in the circumferential direction. The insulating sleeve may include a ceramic material. The portion of the first support may be connected to a grounding RF strap. The body may be made of a ceramic material.

[0007]

[0007] Some embodiments of the present technology may include a faceplate for a semiconductor processing chamber. The faceplate may include a ceramic body having a first surface and a second surface opposite to the first surface. The body may define a plurality of openings penetrating one or both of the first and second surfaces. The faceplate may include a heater disposed inside the body. The faceplate may include a Faraday cage disposed inside the body and formed around the heater.

[0008]

[0008] In some embodiments, the Faraday cage may include a first RF mesh. The faceplate may include a first support for securing the heater to the first RF mesh. The Faraday cage may include a second RF mesh. The faceplate may include a second support for securing the heater to the second RF mesh. Multiple openings may penetrate only the second surface of the body. The faceplate may include a shaft connected to the body. The shaft may include a grounding rod. The edges of the body may include RF grounding straps.

[0009]

[0009] Some embodiments of the present technology may encompass a semiconductor processing chamber. The chamber may include a chamber body defining the processing chamber. The chamber may include a substrate support disposed within the processing chamber. The chamber may include a faceplate positioned on the chamber body. The faceplate may be characterized by a first surface and a second surface opposite to the first surface. The second surface may face the substrate support. The faceplate may define a plurality of openings penetrating one or both of the first surface and the second surface. A heater may be disposed inside the faceplate. A first RF mesh may be disposed between the heater and the first surface. A second RF mesh may be placed between the heater and the second surface. The first and second RF meshes can be connected together to form a Faraday cage around the heater.

[0010]

[0010] In some embodiments, the edge of the faceplate may include a grounding component connected to at least one lid stack component. The grounding component may be connected to a Faraday cage. The grounding component may be connected to the Faraday cage via a support that penetrates the first surface. A portion of the support extending outward from the faceplate may include a ceramic sleeve.

[0011]

[0011] A further understanding of the nature and advantages of the disclosed technology can be obtained by referring to the following parts of this specification and the drawings. [Brief explanation of the drawing]

[0012] [Figure 1A]

[0012] This is a schematic top view of an exemplary processing tool according to some embodiments of the present technology. [Figure 1B]

[0013] This is a schematic partial cross-sectional view of an exemplary processing system according to some embodiments of the present technology. [Figure 2]

[0014] This is a schematic isometric view of the transfer section of an exemplary substrate processing system according to some embodiments of the present technology. [Figure 3]

[0015] This is a cross-sectional view of an exemplary panel arrangement of a substrate processing system according to several embodiments of this technology. [Figure 4]

[0016] Figure 3 is a partial cross-sectional view of the panel of the panel processing system. [Figure 5]

[0017] Figure 3 is a partial cross-sectional view of the panel of the panel processing system. [Figure 6]

[0018] This is a partial cross-sectional view of an exemplary panel arrangement in an exemplary substrate processing system according to several embodiments of the present technology. [Modes for carrying out the invention]

[0013]

[0019] Some diagrams are included as schematic representations. These diagrams are for illustrative purposes only and should not be considered to scale unless explicitly stated otherwise. Furthermore, as schematic representations, they are provided to aid understanding and may not include all aspects or information compared to a realistic depiction, and may include exaggerated material for illustrative purposes.

[0014]

[0020] In the attached diagrams, similar components and / or features may have the same reference numeral. Furthermore, various components of the same kind can be distinguished according to their reference numerals by letters that distinguish between similar components. Where only the first reference numeral is used herein, the description is applicable to any one of the similar components having the same first reference numeral, regardless of the letters.

[0015]

[0021] Substrate processing may involve time-consuming processes for adding, removing, or otherwise modifying material on a wafer or semiconductor substrate. Efficient substrate movement can reduce waiting times and improve substrate throughput. Additional chambers can be incorporated on the mainframe to increase the number of substrates processed within a cluster tool. Transfer robots and processing chambers can be added sequentially by increasing the length of the tool, but space efficiency may decrease as the footprint of the cluster tool increases. Therefore, this technology may include cluster tools with an increased number of processing chambers within a given footprint. To adapt to the limited footprint around the transfer robot, this technology can increase the number of processing chambers laterally outward from the robot. For example, some conventional cluster tools may include one or two processing chambers positioned around a centrally located section of the transfer robot to maximize the number of chambers radially around the robot. This technology can develop this concept by incorporating additional chambers laterally outward as a separate row or group of chambers. For example, this technology can be applied to a cluster tool that includes three, four, five, six, or more processing chambers accessible from each of one or more robot access locations.

[0016]

[0022] However, as additional process locations are added, accessing these locations from a central robot may become impossible unless additional transport functions are provided at each location. Some conventional technologies may include wafer carriers in which the substrate remains seated during transport. However, wafer carriers can contribute to thermal non-uniformity and particle contamination on the substrate. This technology overcomes these problems by incorporating a transport section aligned perpendicularly to the processing chamber area and a carousel or transport device that can operate in cooperation with a central robot to access additional wafer locations.

[0017]

[0023] Many deposition and cleaning operations are more effective and / or efficient at high temperatures, such as 400°C, 500°C, 600°C, or above. Conventionally, the faceplate is made of aluminum, which can sag or otherwise deform at such high temperatures. Furthermore, some conventional processing systems are designed to generate plasma only within the processing area (e.g., between the faceplate and the substrate support). However, if an electric field is present above the faceplate, parasitic plasma can be generated in the chamber components above the faceplate. This parasitic plasma can cause many problems. For example, parasitic plasma can create a power loss source that steals the power used to deposit material on the substrate within the processing area. Parasitic plasma can also create particle problems due to residues that detach from the parasitic plasma from the surface of the processing system, where chamber cleaning operations are difficult. The formation of parasitic plasma can create process heterogeneity because plasma generation (and subsequent power loss) can make plasma generation within the processing area asymmetrical. Furthermore, since the amount of parasitic plasma generated in each chamber can vary, this parasitic plasma can contribute to chamber matching problems.

[0018]

[0024] This technology overcomes these challenges by utilizing a faceplate formed from a ceramic material capable of withstanding temperatures exceeding 600°C. This makes it possible to use the faceplate in high-temperature processing and / or cleaning operations. Furthermore, embodiments of the faceplate may integrate a Faraday cage surrounding a heating element located within the faceplate itself. The use of such a Faraday cage helps reduce the amount of electric field present above the faceplate, thereby reducing or eliminating the generation of parasitic plasma in the chamber components above the faceplate. In some embodiments that reduce the amount of electric field present above the faceplate, the periphery of the faceplate may be grounded, which may further reduce the amount of electric field present above the faceplate. Thus, this technology can enable higher-temperature processes while simultaneously helping to reduce or eliminate the presence of parasitic plasma in the processing system.

[0019]

[0025] In the remaining disclosure, specific structures such as a four-position transfer region that can employ the present structure and method are identified as normal, but it will be readily understood that the present system and method are equally applicable to any number of structures and devices that can benefit from the described transfer function. Therefore, the present technology should not be considered limited to use in any specific structure. Further, an exemplary tool system is described to provide a basis for the present technology, but it should be understood that the present technology can be incorporated into any number of semiconductor processing chambers and tools that can benefit from some or all of the described processes and systems.

[0020]

[0026] FIG. 1A shows a top view of one embodiment of a substrate processing tool or processing system 100 including a deposition chamber, an etching chamber, a baking chamber, and a curing chamber, according to some embodiments of the present technology. In the figure, a set of front-opening unified pods 102 supply substrates of various sizes, which are received by robot arms 104a and 104b within a factory interface 103 and placed within a load lock or a low-pressure holding region 106, and then delivered to one of the substrate processing regions 108 positioned within a chamber system or quad section 109a-c, each of which can be a substrate processing system having a transfer region fluidly connected to a plurality of processing regions 108. Although a quad system is shown, it should be understood that platforms incorporating stand-alone chambers, twin chambers, and other multi-chamber systems are equally encompassed by the present technology. A second robot arm 110 housed within a transfer chamber 112 can be used to transfer substrate wafers from the holding region 106 to the quad section 109, and the second robot arm 110 can be housed within a transfer chamber that can connect each of the quad section or the processing system. Each substrate processing region 108 can be equipped to perform some substrate processing steps including any number of deposition processes including periodic layer deposition, atomic layer deposition, chemical vapor deposition, physical vapor deposition, and etching, pre-cleaning, annealing, plasma processing, degassing, orientation, and other substrate processes.

[0021]

[0027] Each quad section 109 may include a transfer region that can receive a substrate from the second robot arm 110 and deliver the substrate to the second robot arm 110. The transfer region of the chamber system may be aligned with the transfer chamber having the second robot arm 110. In some embodiments, the transfer region may be accessible laterally to the robot. In subsequent processes, the components of the transfer section may translate the substrate vertically and parallel into the processing region 108 thereabove. Similarly, the transfer region may also be operable to rotate the substrate between positions within each transfer region. The substrate processing region 108 may include any number of system components for depositing, annealing, curing, and / or etching a material film on a substrate or wafer. In one configuration, two sets of processing regions, such as the processing regions within quad sections 109a and 109b, can be used to deposit material on a substrate, and a third set of processing chambers, such as the processing chamber or processing region within quad section 109c, can be used to cure, anneal, or process the deposited film. In another configuration, all three sets of chambers, such as all twelve chambers shown, can be configured to perform both depositing a film on a substrate and / or curing the film on the substrate.

[0022]

[0028] As shown in the figure, the second robot arm 110 may include two arms for simultaneously delivering and / or retrieving multiple substrates. For example, each quad section 109 may include two access sections 107 along the surface of the transport area housing, the access sections 107 of which may be aligned laterally with the second robot arm. The access sections may be defined along the surface adjacent to the transport chamber 112. In some embodiments as shown, the first access section may be aligned with the first substrate support of the multiple substrate supports of the quad section. Furthermore, the second access section may be aligned with the second substrate support of the multiple substrate supports of the quad section. The first substrate support may be adjacent to the second substrate support, and these two substrate supports may define the first row of substrate supports in some embodiments. As shown in the illustrated configuration, the second row of substrate supports may be positioned laterally outward from the transport chamber 112 and behind the first row of substrate supports. The two arms of the second robot arm 110 may be spaced apart so that they can simultaneously enter the quad section or chamber system to deliver or retrieve one or two substrates to the substrate support within the transfer area.

[0023]

[0029] Any one or more of the described transfer areas may incorporate additional chambers separate from the manufacturing systems shown in different embodiments. It will be understood that the processing system 100 may further include configurations of deposition chambers, etching chambers, annealing chambers, and curing chambers for material films. Furthermore, any number of other processing systems may be utilized in this technology, which may incorporate transfer systems for performing any of the specific steps, such as substrate movement. In some embodiments, it may be possible to perform processes in multiple chambers while maintaining specific vacuum environments between separate processes, by providing access to multiple processing chamber areas while maintaining vacuum environments in various sections such as the holding and transfer areas mentioned.

[0024]

[0030] Figure 1B shows a schematic cross-sectional elevation of one embodiment of an exemplary processing tool, for example, a chamber system, according to several embodiments of the present technology. Figure 1B may show cross-sectional views of any two adjacent processing regions 108 within any quad section 109. The elevation may show the configuration or fluid connection between one or more processing regions 108 and a transfer region 120. For example, a continuous transfer region 120 may be defined by a transfer region housing 125. The housing may define an open internal space in which several substrate supports 130 may be arranged. For example, as shown in Figure 1A, an exemplary processing system may include four or more substrate supports 130, including several substrate supports 130 distributed within a housing around a transfer region. The substrate supports may be pedestals as shown, but several other configurations may also be used. In some embodiments, the pedestals may be vertically translatable between the transfer region 120 and the processing region above the transfer region. The substrate support may be able to move vertically along the central axis of the substrate support along a path between a first position and a second position within the chamber system. Thus, in some embodiments, each substrate support 130 can be axially aligned with the processing area 108 located above, which is defined by one or more chamber components.

[0025]

[0031] The open transfer area may give the transfer device 135, such as a carousel, the ability to engage with the substrate and move the substrate, for example, while rotating, between various substrate supports. The transfer device 135 may be rotatable around a central axis. This may allow the substrate to be positioned for processing within any processing area 108 in the processing system. The transfer device 135 may include one or more end effectors, which may engage with the substrate from above, below, or the outer edge of the substrate to move it around the substrate supports. The transfer device can receive the substrate from a transfer chamber robot, such as the robot 110 described earlier. The transfer device can then rotate the substrate to alternating substrate supports to facilitate the supply of further substrates.

[0026]

[0032] When the transfer device is positioned and ready for processing, it can position an end effector or arm between the substrate supports, thereby enabling the substrate supports to rise above the transfer device 135 and deliver the substrate into a processing area 108 that can be offset perpendicularly to the transfer area. For example, as shown, substrate support 130a can deliver the substrate into processing area 108a, while substrate support 130b can deliver the substrate into processing area 108b. This can also be done with two other substrate supports and processing areas, and with additional substrate supports and processing areas in embodiments that include additional processing areas. In this configuration, when the substrate support is operably engaged for processing a substrate, for example in a second position, it can at least partially define the processing area 108 from below, and this processing area can be axially aligned with the associated substrate support. The processing area can be defined from above by the faceplate 140 and other lid stack components. In some embodiments, each processing area may have individual lid stack components, while in some embodiments, the components may be adaptable to multiple processing areas 108. Based on this configuration, in some embodiments, each processing area 108 may be fluidly connected to a transfer area while being fluidly separated from each other processing area in the chamber system or quad section from above.

[0027]

[0033] In some embodiments, the faceplate 140 may act as an electrode of the system for creating a localized plasma within the processing region 108. As shown, each processing region may utilize or incorporate a separate faceplate. For example, faceplate 140a may be included to define the processing region 108a from above, and faceplate 140b may be included to define the processing region 108b from above. In some embodiments, a substrate support may act as a companion electrode for generating a capacitively coupled plasma between the faceplate and the substrate support. In some embodiments, the faceplate may be heated by a heater 142 extending around the faceplate. A pumping liner 145 may define the processing region 108 at least partially radially or transversely, according to the shape of the space. Again, a separate pumping liner may be used for each processing region. For example, pumping liner 145a may define the processing region 108a at least partially radially, and pumping liner 145b may define the processing region 108b at least partially radially. The pumping liner 145 may be seated on a choke plate 147, which can control the heat distribution from the lid stack to the cooled chamber body. In the embodiment, a shielding plate 150 may be positioned between the lid 155 and the faceplate 140, where again, separate shielding plates may be included to facilitate fluid distribution within each processing area. For example, shielding plate 150a may be included for distribution toward processing area 108a, and shielding plate 150b may be included for distribution toward processing area 108b.

[0028]

[0034] The lid 155 may be a separate component for each processing area, or it may include one or more common embodiments. In some embodiments, the lid 155 may be one of two separate lid plates of the system. For example, a first lid plate 158 may sit on the transfer area housing 125. The transfer area housing may define an open space, and the first lid plate 158 may include several openings that penetrate the lid plate, dividing the space above into specific processing areas. In some embodiments as shown, the lid 155 may be a second lid plate and may be a single component defining a plurality of openings 160 for fluid supply to individual processing areas. For example, the lid 155 may define a first opening 160a for fluid supply to processing area 108a, and the lid 155 may define a second opening 160b for fluid supply to processing area 108b. Additional openings for additional processing areas within each section may be defined, when included. In some embodiments, each quad section 109, or a multi-processing area section capable of accommodating more or fewer than four substrates, may include one or more remote plasma units 165 for delivering plasma ejecta into the processing chamber. In some embodiments, individual plasma units may be incorporated into each chamber processing area, while in some embodiments, fewer remote plasma units may be used. For example, as shown, a single remote plasma unit 165 may be used for multiple chambers, for example, two, three, four, or more chambers (up to all chambers for a particular quad section). In embodiments of the art, piping may extend from the remote plasma unit 165 to each opening 160 for delivering plasma ejecta for processing or cleaning.

[0029]

[0035] In some embodiments, the purge channels 170 may penetrate the transfer region housing in the vicinity of or near each substrate support 130. For example, multiple purge channels may penetrate the transfer region housing to provide fluid access for delivering fluid-coupled purge gas into the transfer region. The number of purge channels may be the same as or different from the number of substrate supports in the processing system, and may be more or less than the number of substrate supports. For example, the purge channels 170 may penetrate the transfer region housing beneath each substrate support. In the two substrate supports 130 shown, the first purge channel 170a may penetrate the housing in the vicinity of substrate support 130a, and the second purge channel 170b may penetrate the housing in the vicinity of substrate support 130b. Any additional substrate supports should similarly be understood to have piped purge channels that penetrate the transfer region housing for providing purge gas into the transfer region.

[0030]

[0036] When the purge gas is delivered through one or more of the purge channels, it can similarly be discharged through the pumping liner 145, which can provide all exhaust pathways from the processing system. As a result, in some embodiments, both the processing precursor and the purge gas can be discharged through the pumping liner. The purge gas can flow upward to the associated pumping liner; for example, the purge gas that has flowed through the purge channel 170b can be discharged from the processing system through the pumping liner 145b.

[0031]

[0037] As described above, the processing system 100, more specifically the quad section or chamber system incorporated into the processing system 100 or other processing systems, may include a transfer section positioned below the indicated processing chamber area. Figure 2 shows a schematic isometric view of the transfer section of an exemplary chamber system 200 according to several embodiments of the present technology. Figure 2 may show additional embodiments or modifications of the embodiments of the transfer area 120 described above, and may include any of the components or characteristics described above. The illustrated system may include a transfer area housing 205 that defines a transfer area which may include several components. Furthermore, the transfer area may be defined at least partially from above by a processing chamber or processing area fluidly connected to the transfer area, for example by the processing chamber area 108 shown in the quad section 109 in Figure 1A. The side walls of the transfer area housing may define one or more access points 207 from which substrates can be delivered and retrieved, for example by the second robotic arm 110 described above. Access locations 207 may be slit valves or other sealable access locations, and in some embodiments, may include doors or other sealing mechanisms to provide a sealed environment within the transport area housing 205. Although two such access locations 207 are shown, it should be understood that in some embodiments, only a single access location 207 may be included, or access locations on multiple sides of the transport area housing may also be included. It should also be understood that the illustrated transport section may be sized to accommodate substrates of any size, including 200 mm, 300 mm, 450 mm, or larger or smaller, including substrates characterized by any number of outlines or shapes.

[0032]

[0038] Within the transport area housing 205, there may be multiple substrate supports 210 positioned around the transport area space. Although four substrate supports are shown, it should be understood that any number of substrate supports are similarly encompassed in embodiments of the Art. For example, three, four, five, six, eight, or more substrate supports 210 may be accommodated within the transport area according to embodiments of the Art. A second robotic arm 110 may deliver a substrate to one or both of the substrate supports 210a or 210b via the access section 207. Similarly, the second robotic arm 110 may retrieve a substrate from these locations. A lift pin 212 may protrude from the substrate support 210, allowing the robot to access the area beneath the substrate. The lift pin may be fixed on the substrate support, or fixed in a location where the substrate support can recess downward, or, in some embodiments, the lift pin may further penetrate the substrate support and be raised and lowered. The substrate support 210 may be vertically movable and, in some embodiments, may extend to a processing chamber area of ​​a substrate processing system located above the transfer area housing 205, such as a processing chamber area 108.

[0033]

[0039] The transfer area housing 205 may provide an access section 215 for an alignment system which may include an aligner, which may penetrate an opening in the illustrated transfer area housing and operate in conjunction with a laser, camera, or other monitoring device protruding or penetrating through an adjacent opening to determine whether a moving substrate is properly aligned. The transfer area housing 205 may also include a transfer device 220 which may operate in several ways to position a substrate and move the substrate between various substrate supports. In one embodiment, the transfer device 220 may move a substrate on substrate supports 210a and 210b to substrate supports 210c and 210d, thereby enabling the delivery of further substrates into the transfer chamber. Additional transfer steps may include rotating the substrate between substrate supports for additional processing in an upper processing area.

[0034]

[0040] The transfer device 220 may include a central hub 225, which may include one or more shafts extending into the transfer chamber. End effectors 235 may be connected to the shafts. The end effectors 235 may include a plurality of arms 237 extending radially or laterally outward from the central hub. Although a central body from which the arms extend is shown, the end effectors may further include separate arms, each connected to a shaft or the central hub, in various embodiments. In embodiments of this technology, any number of arms may be included. In some embodiments, the number of arms 237 may be about the same as or equal to the number of substrate supports 210 contained in the chamber. Thus, as shown, in the case of four substrate supports, the transfer device 220 may include four arms extending from the end effectors. The arm may be characterized by any number of shapes and profiles, such as linear or arcuate profiles, and may include any number of distal profiles, including hooks, rings, forks, or other designs for supporting and / or providing access to the substrate, for example, for alignment or engagement.

[0035]

[0041] The end effector 235, or any component or part of the end effector, may be used to contact the substrate during transport or movement. These components and the end effector may be made from or include several materials, including conductive and / or insulating materials. In some embodiments, the material may be coated or plated to withstand contact with precursors or other chemicals that may pass from the processing chamber above into the transport chamber.

[0036]

[0042]

[0001] Furthermore, materials can be provided or selected to withstand other environmental characteristics such as temperature. In some embodiments, the substrate support may be operable to heat the substrate placed on the support. The substrate support may be configured to raise the surface or substrate temperature to about 100°C or higher, about 200°C or higher, about 300°C or higher, about 400°C or higher, about 500°C or higher, about 600°C or higher, about 700°C or higher, about 800°C or higher, or higher than these temperatures. Any of these temperatures can be maintained during operation, and thus components of the transfer device 220 may be exposed to any of the above temperatures or the temperatures included. As a result, in some embodiments, any of the materials may be selected to adapt to these temperature conditions and may include materials such as ceramics and metals that can be characterized by a relatively low coefficient of thermal expansion or other beneficial properties.

[0037]

[0043] The connections between components may also be adapted for operation in high-temperature and / or corrosive environments. For example, when the end effector and end are ceramic, the connections may include press fits, snap fittings, or other fittings that do not include additional materials such as bolts, which may expand and contract with temperature and cause cracking in the ceramic. In some embodiments, the end may be continuous with the end effector or formed integrally with the end effector. Any number of other materials that may facilitate the process and resistance during operation may be used and are also included in this technology.

[0038]

[0044] Figure 3 shows a cross-sectional view of an exemplary faceplate arrangement 300 configuration of an exemplary substrate processing system according to several embodiments of the present technology. In particular, the faceplate arrangement 300 includes a shaft 310, a grounding rod 320, and a faceplate 400. The grounding rod 320 may be used to discharge current associated with the faceplate 400. The shaft 310 may house the grounding rod 320 and / or other components. For example, in some embodiments, one or more gas supply lines may be located within the shaft 310. The gas supply lines may be connected to one or more gas sources and may be used to deliver one or more precursors, cleaning gases, inert gases, and / or other gases to the supply space of the faceplate 400.

[0039]

[0045] Figures 4 and 5 show partial cross-sectional views of the faceplate 400 according to several embodiments of the present technology. Figures 4 and 5 may show further details regarding components within the system 100, such as the faceplate 140. The faceplate 400 is understood to include any features or aspects of the system 100 described above in several embodiments. The faceplate 400 may be used to perform semiconductor processing processes, including the deposition of the hard mask material described above, as well as other deposition, removal, and cleaning processes. The faceplate 400 may show partial views of the faceplate that can be incorporated into a semiconductor processing system, views crossing the center of the faceplate, and the faceplate may otherwise be of any size and may include any number of openings. Although several openings extending laterally or radially outward are shown, it should be understood that the figures are included for illustrative purposes of the embodiments only and are not scaled. For example, an exemplary panel may be characterized by having approximately 20 or more openings along its central diameter, as will be further described below, or by having approximately 25 or more, approximately 30 or more, approximately 35 or more, approximately 40 or more, approximately 45 or more, approximately 50 or more, or more openings.

[0040]

[0046] As described above, the faceplate 400 may be included in any number of processing chambers, including the system 100 described above. The faceplate 400 may be included as part of a gas inlet assembly, such as a gas box and a shielding plate. For example, the gas box may define or provide access to the processing chamber. A substrate support may be included in the chamber and configured to support a substrate for processing. A shielding plate may be included in the chamber between the gas box and the substrate support. The shielding plate may include or define several openings that penetrate the plate. Components may include any of the features described above for similar components, as well as various other modifications similarly included in this art.

[0041]

[0047] As previously illustrated, the faceplate 400 may be positioned in some embodiments within a chamber between the shielding plate and the substrate support. The faceplate 400 may include an upper surface (or first surface) 401 and a lower surface (or second surface) 402 facing the upper surface 401. For example, in some embodiments, the first surface 401 may face the shielding plate, gas box, or gas inlet to the processing chamber, while the second surface 402 may be positioned to face the substrate support or substrate within the processing area of ​​the processing chamber. For example, in some embodiments, the second surface 402 and the substrate support of the faceplate 400 may define at least partially the processing area within the chamber. The faceplate 400 is characterized by a central axis that may extend vertically through the midpoint of the showerhead and may be coaxial with the central axis passing through the processing chamber.

[0042]

[0048] The faceplate 400 may define a plurality of openings 403 defined through at least a portion of the faceplate 400. For example, in some embodiments, the openings 403 may extend from a first surface 401 through a second surface 402. In other words, each opening 403 may penetrate the entire thickness of the faceplate 400. In other embodiments, each opening 403 may be defined only by the second surface 402 and may penetrate only the second surface 402. For example, the faceplate 400 may define one or more return conduits 450 that are fluidly connected to the central space 470 and / or the openings 403 and can receive one or more gases from one or more gas supply lines (which may be located in the shaft 310 in some embodiments). The gases from the supply lines may be distributed into the central space 470 and / or the return conduits 450. Due to the small size of the openings 403, the gas can flow radially outward through the central space 470 and / or through the length of the return conduit 450 and through the openings 403 formed throughout the faceplate 403. Each opening 403 may provide a flow path through the faceplate 400, and the openings 403 may provide fluid access to the processing area of ​​the chamber. Depending on the size of the faceplate 400 and the size of the openings 403, the faceplate 400 may define any number of openings 403 through the plate, e.g., greater than about 1,000, greater than about 2,000, greater than about 3,000, greater than about 4,000, greater than about 5,000, greater than about 6,000, or more. As described above, the openings may be contained in a set of rings extending outward from the central axis, and as previously stated, may contain any number of rings. The ring may be characterized by any number of shapes, including circular or elliptical, as well as any other outline patterns, such as rectangular, hexagonal, or any other outline patterns that may include openings distributed in a number of radially outward rings. The openings may be uniformly or staggered in their spacing and may be spaced about 10 mm or less from center to center. The openings may be spaced about 9 mm or less, about 8 mm or less, about 7 mm or less, about 6 mm or less, about 5 mm or less, about 4 mm or less, about 3 mm or less, or less.

[0043]

[0049] The rings can be characterized by any external shape, as described above, and in some embodiments, the openings can be characterized by a scaling function of the number of openings per ring. For example, in some embodiments, the first opening may penetrate the center of the faceplate, such as along the central axis. The first ring of openings may extend around the central opening and may contain any number of openings, such as between about 4 and about 10 openings, and these openings may be spaced equally apart around an external shape that penetrates the center of each opening. Any number of additional rings of openings may extend radially outward from the first ring and may contain several openings that are a function of the number of openings in the first ring. For example, the number of openings in each consecutive ring may be characterized by the number of openings in each corresponding ring according to the formula XR, where X is the base number of openings and R is the number of corresponding rings. The base number of openings may be the number of openings in the first ring, and may be other numbers, as will be further described later, in some embodiments when the first ring has an increased number of openings. For example, in the case of an exemplary faceplate having five openings distributed around a first ring, if 5 is the basic number of openings, then the second ring may be characterized by 10 openings, (5) × (2), the third ring may be characterized by 15 openings, (5) × (3), and the 20th ring may be characterized by 100 openings, (5) × (20). This can continue for any number of rings of openings, such as up to, more than, or about 50 rings, as previously stated. In some embodiments, each opening of a plurality of openings traversing the faceplate may be characterized by an opening profile, which may be the same or different in embodiments of the present art. For example, the opening profile may be cylindrical as shown, or generally frustoconical. In some embodiments, some or all of the opening profiles of an opening may include a plurality of cylindrical and / or conical sections, and may include one or more choke regions. The opening profiles may be the same for each of the openings, or may differ in various embodiments.

[0044]

[0050] The body 410 may accommodate several components for the faceplate 400. In particular, the body 410 may accommodate an upper (or first) RF mesh 420, a second (or lower) RF mesh 430, a heater 460, a support 440, and / or conduits 450. As shown, the body 410 may accommodate the meshes 420, 430, heater 460, support 440, and / or conduits 450 as a whole. However, in other embodiments, at least a portion of one or more components may not be completely housed within the body 410.

[0045]

[0051] The heater 460 may be embedded within the main body 410 as described above. The heater 460 may include one or more conductive plates and / or coils used to heat the faceplate 400. For example, in some embodiments, the heater 460 may include one or more coils and / or other heating elements that can penetrate a portion of the central space 470. For example, in some embodiments, the coil may have a helical shape extending radially outward from the center of the faceplate 400, while in other embodiments, the coil may have other recursive shapes. In other embodiments, the heater 460 may include one or more generally disc-shaped plates that at least substantially (e.g., greater than 90%, greater than 95%, greater than 97%, greater than 99%, etc.) fill the cross-sectional area of ​​the faceplate 400, extend across it, and / or otherwise span the cross-sectional area of ​​the faceplate 400. The heater 460 may be connected to a power source such as an AC power supply, which can supply current to the heater 460 to raise the temperature of the faceplate 400 and the gas flowing therethrough. The heater 460 may have a circumferential area and / or diameter substantially similar to that of the interior of the body 410 so that the heater 460 applies a substantially uniform heat distribution to the components within the body 410. However, in other embodiments, the heater may have a smaller circumferential area and / or diameter than that of the interior of the body 410 (for example, if there are multiple heaters).

[0046]

[0052] As described above, the main body 410 includes and / or may define one or more conduits 450. In some embodiments, the conduits 450 may include one or more recursive shapes extending from the center of the faceplate 400 toward the outer periphery of the central space 470. For example, the conduits 450 may include helical shapes, several concentric rings, and / or other shapes that can be used to distribute one or more gases over an area of ​​the faceplate 400. Each conduit 450 includes several channels 451 extending between the conduit 450 and each of the openings 403, and / or may be fluidly connected to them. In this way, one or more gases can flow through the conduits 450 and channels 451 and exit the faceplate 400 through the openings 403. In some applications, RF power can be supplied to the faceplate 400 and pedestal to cause the plasma of one or more gases within the processing area of ​​the processing chamber to collide. Although the conduit 450 is shown to have a rectangular cross-section, it will be understood that in other embodiments the cross-section of the conduit 450 may have other shapes (e.g., circular).

[0047]

[0053] The first RF mesh 420 and the second RF mesh 430 can be positioned on opposite sides of the heater 460. In certain embodiments, each RF mesh 420, 430 may be positioned approximately 1 mm to 10 mm, 2 mm to 9 mm, 3 mm to 8 mm, 4 mm to 7 mm, or 5 mm to 6 mm from the nearest respective surface (e.g., the first surface 401 or the second surface 402), the spacing of which, in some embodiments, is determined by the thickness of the body 410. The outer periphery of the RF meshes 420, 430 may extend radially outward to a distance equal to or greater than that of the heater 460, thereby allowing the RF meshes 420, 430 to be connected to completely enclose the body of the heater 460. For example, several vias 442 may be used to connect the RF meshes 420, 430. The vias or supports 442 may extend directly between the RF meshes 420 and 430, or between one of the RF meshes 420 and 430 and one or more intervening components. For example, as shown in Figure 5, a first via 442a may extend between the second RF mesh 430 and a reinforcing pad or flange 443, connecting them. A second via 442D may extend between the reinforcing pad or flange 443 and a reinforcing pad or flange 441, connecting them. A third via 442B may extend between the reinforcing pad or flange 441 and a heater 460, connecting them. A fourth via 442A may extend between the heater 460 and the first RF mesh 420, connecting them. In this way, the two RF meshes 420 and 430 can be connected. It will be understood that more, fewer, and / or different intervening connections may be made to link two RF meshes 420 and 430.

[0048]

[0054] The first and second RF meshes 420, 430, via 442, heater 460, and flanges 441, 443 may be fabricated from a conductive material such that the meshes 420, 430 form a Faraday cage surrounding the conductive heater 460. The Faraday cage may help to suppress electric fields generated during processing operation (e.g., from the heater 460 and / or from the RF electric field between the faceplate 400 and the pedestal used to collide plasma within the processing area) to the area below the faceplate 400. The reduction of the electric field above the faceplate 400 may help to reduce or eliminate the generation of parasitic plasma above the faceplate 400. The RF meshes 420, 430 may each define openings 421, 431, respectively, which are sized to form a mesh structure for forming the Faraday cage. The openings 421, 431 may further be sized to allow components to pass through the meshes 420, 430. For example, the opening 431 may be sized and / or positioned so that at least a portion of the channel 451 can pass through the mesh 430. In this way, one or more gases can pass through the RF meshes 420, 430 to be supplied to the processing area.

[0049]

[0055] Furthermore, the RF meshes 420 and 430 may have a circumferential area substantially similar to that of the interior of the body 410, such that the meshes 420 and 430 form a Faraday cage having a circumferential area substantially similar to that of the interior of the body 410, and therefore substantially similar to that of the circumferential area of ​​the faceplate 400. The size of this Faraday cage may help prevent charges from one side of the faceplate 400 from passing to the other side. For example, if the faceplate 400 is assembled in a substrate processing system, the Faraday cage created by the meshes 420 and 430 may help prevent charges generated below the faceplate 400 (e.g., between the faceplate 400 and the pedestal (which functions as an electrode) during a capacitively coupled plasma process) from seeping into the components of the substrate processing system above the faceplate 400. This prevention of charges helps reduce or minimize the formation of parasitic plasma above the faceplate 400.

[0050]

[0056] The positions of the components of the faceplate 400 within the main body 410 can be reinforced by a support 440. The support 440 may include an upper (or first) flange or pad 441, a lower (or second) flange or pad 443, and a via or support 442 extending between the flanges 441, 443. The support 440 may be formed integrally so that the flanges 441, 443 and the support 442 are integrated with each other. Alternatively, the flanges 441, 443 and the support 442 may be constructed separately before being engaged with each other (for example, by welding).

[0051]

[0057] The flanges 441 and 443 can be engaged with the body 410 (for example, by welding) so that any other components that engage with the flanges 441 and 443 can similarly be supported by the body 410. For example, the flanges 441 and 443 can be engaged with the conduit 450 to support the position of the conduit 450. In particular, the upper flange 441 can be engaged with the upper surface of the conduit 450, and the lower flange 443 can be engaged with the lower surface of the conduit 450. In this way, the position of the conduit 450 can be supported by the flanges 441 and 443 and the connections to the body 410.

[0052]

[0058] Referring specifically to Figure 5, the support columns 442 are shown extending from flanges 441 and 443 toward other components within the main body 410 to support the position of these components. For example, support column 442A extends from the lower flange 443 and engages with the lower mesh 430. Furthermore, support column 442B extends from the upper flange 441 and engages with the heater 460. A separate support column 442C may extend from the heater 460 to the upper mesh 420. Support columns 442A, 442B, 442C, and 442D may be engaged with corresponding components by welding or other means. Therefore, the positions of the meshes 420, 430 and the heater 460 can be supported by their respective connections to the support columns 442A, 442B, 442C, and 442D, the connections between the support columns 442A, 442B, 442C, and 442D and the flanges 441 and 443, and the connections between the flanges 441 and 443 and the main body 410.

[0053]

[0059] In other embodiments, additional flanges may be present to connect at least one of the heater and the mesh to the main body. For example, each of the heater and the mesh may include its own pair of flanges for connecting each component to the main body. Alternatively, the conduit may not engage with a flange, and instead either the mesh or the heater may engage with a flange, which in turn engages with the main body. Yet another method is to have a fixed structure in which struts extending from the upper flange have ends that engage with the upper mesh and the upper flange. In this example, the struts may pass through the heater, and the heater may be fixed to the middle of the struts.

[0054]

[0060] The support 440 can be made of a conductive material such as tungsten. In this way, the support 440 can form part of the Faraday cage together with the meshes 420 and 430.

[0055]

[0061] The body 410 may be made of an insulating material such as ceramic, which may have a higher coefficient of thermal expansion than conductors such as aluminum. Suitable ceramics may include, for example, aluminum nitride and / or aluminum oxide. A higher coefficient of thermal expansion may allow the faceplate 400 to be used in high-temperature processing and cleaning operations, such as operations involving operating temperatures of 250°C, 300°C, 350°C, 400°C, 450°C, 500°C, 550°C, 600°C, or higher.

[0056]

[0062] The faceplate 400 may provide a substantial reduction in charge to the area of ​​the processing system above the faceplate 400, but further protection from charge may be desired. Figure 6 shows an exemplary faceplate 400', which may be similar to faceplate 400 except as described below. In this embodiment, features having similar reference numbers to those described above are similar except as described below. Each support column 442C' may include a portion 444' of conductive material extending beyond the upper mesh 420' and the upper surface 401'.

[0057]

[0063] Each section 444' includes an end 445' connected to a grounding component 500' (e.g., a strap) which can be connected to the chamber body and / or lid stack components. The grounding component 500' can help dissipate charge within the faceplate 400. Since the support columns 442C' can form part of the Faraday cage, grounding section 444' can help eliminate charge in the Faraday cage. This grounding can further minimize the risk of charge seeping above the faceplate 400'.

[0058]

[0064] The sleeve 475' may surround the portion 444' circumferentially to prevent the portion 444' from being damaged by any process gases. The sleeve 475' may be made of an insulating material such as ceramic.

[0059]

[0065] The above description includes numerous details for explanatory purposes to provide an understanding of the various embodiments of this technology. However, it will be obvious to those skilled in the art that certain embodiments can be implemented without some of these details, or with additional details.

[0060]

[0066] While several embodiments have been disclosed, it will be recognized by those skilled in the art that various modifications, alternative structures, and equivalents can be used without departing from the essence of the embodiments. In addition, some well-known processes and elements have not been described in order to avoid unnecessarily obscuring the Art. Therefore, the above description should not be construed as limiting the scope of the Art. Furthermore, while methods or processes may be described sequentially or stepwise, it should be understood that the actions may be performed simultaneously or in an order different from that listed.

[0061]

[0067] Where a range of values ​​is provided, each of the intervening values ​​between the upper and lower limits of that range is understood to be specifically disclosed down to the smallest unit of the lower limit (unless explicitly indicated otherwise in the context). Narrower ranges between any two listed values ​​or between unlisted intervening values ​​within a given range, and all other listed or intervening values ​​within such ranges, are encompassed. The upper and lower limits of such narrower ranges may be individually included in or excluded from that range. Each range containing either, neither, or both of the limit values ​​is also encompassed in this technology, although there may be limit values ​​specifically excluded within the ranges described. Where a range contains one or both limit values, it also includes ranges that exclude one or both of the contained limit values.

[0062]

[0068] In this specification and the appended claims, the singular “a, an” and “the” imply a plural meaning (unless explicitly indicated otherwise in the context). Thus, for example, “a plate” refers to multiple such plates, and “the aperture” refers to one or more apertures and equivalents known to those skilled in the art, and so on.

[0063]

[0069] Furthermore, when used in this specification and subsequent claims, the terms “comprise(s) / comprising,” “contain(s) / containing,” and “include(s) / including” are intended to identify the presence of a described feature, integer, component, or process, but not to exclude the presence or addition of one or more other features, integers, components, processes, operations, or groups.

[0064]

[0070] Directional references such as "up," "upper," "lower," "down," "top," "left," "right," and "bottom" are not intended to be restrictive, but rather to refer to the orientation as illustrated and described in the figure (or figures) in which the components and directions are referenced.

Claims

1. A panel for a semiconductor processing chamber, A body having a first surface and a second surface opposite to the first surface, wherein the body defines a plurality of openings that penetrate one or both of the first surface and the second surface, A heater is placed inside the main body, A first RF mesh is disposed between the heater and the first surface, A second RF mesh is disposed between the heater and the second surface. A faceplate for a semiconductor processing chamber, comprising the first RF mesh and the second RF mesh being connected together to form a Faraday cage around the heater.

2. The main body further comprises one or more conduits arranged inside the main body, The faceplate of a semiconductor processing chamber according to claim 1, wherein one or more conduits are fluidly connected to the plurality of openings.

3. The faceplate of a semiconductor processing chamber according to claim 2, wherein the one or more conduits form a recursive pattern that distributes gas radially outward around the area of ​​the faceplate.

4. The faceplate of a semiconductor processing chamber according to claim 1, wherein the main body comprises a first support column for fixing the heater to a first conductive mesh.

5. The panel of a semiconductor processing chamber according to claim 4, wherein the main body includes a second support column for fixing the heater to a second conductive mesh.

6. A faceplate for a semiconductor processing chamber according to claim 4, wherein a portion of the first support column penetrates the first surface of the main body.

7. The faceplate of the semiconductor processing chamber according to claim 6, wherein the insulating sleeve surrounds the portion of the first support column in the circumferential direction.

8. The faceplate of the semiconductor processing chamber according to claim 7, wherein the insulating sleeve includes a ceramic material.

9. The panel of the semiconductor processing chamber according to claim 6, wherein the portion of the first support column is connected to a grounding RF strap.

10. The faceplate of the semiconductor processing chamber according to claim 1, wherein the main body is made of a ceramic material.

11. A panel for a semiconductor processing chamber, A ceramic body having a first surface and a second surface opposite to the first surface, wherein the body defines a plurality of openings penetrating one or both of the first surface and the second surface, A heater is placed inside the main body, Displaced inside the main body and formed around the heater, a Faraday cage and A panel for a semiconductor processing chamber, comprising the above.

12. The Faraday cage comprises a first RF mesh, The panel for a semiconductor processing chamber according to claim 11, wherein the panel further comprises a first support column for fixing the heater to the first RF mesh.

13. The Faraday cage comprises a second RF mesh, The panel for a semiconductor processing chamber according to claim 12, wherein the panel further comprises a second support column for fixing the heater to the second RF mesh.

14. The faceplate of a semiconductor processing chamber according to claim 11, wherein the plurality of openings penetrate only the second surface of the main body.

15. A shaft equipped with a grounding rod is connected to the main body. A faceplate for a semiconductor processing chamber according to claim 14, further comprising the above.

16. The panel of the semiconductor processing chamber according to claim 14, wherein the edge of the main body is provided with an RF grounding strap.

17. A semiconductor processing chamber, A chamber body that defines the processing chamber, A substrate support arranged in the processing chamber, A faceplate positioned on the chamber body and The panel comprises a first surface and a second surface opposite to the first surface, the second surface facing the substrate support, The panel defines a plurality of openings that penetrate one or both of the first surface and the second surface. The heater is located inside the panel. The first RF mesh is placed between the heater and the first surface. A second RF mesh is placed between the heater and the second surface. A semiconductor processing chamber in which the first RF mesh and the second RF mesh are connected together to form a Faraday cage around the heater.

18. The semiconductor processing chamber according to claim 17, wherein the edge of the faceplate comprises a grounding component connected to at least one lid stack component.

19. The semiconductor processing chamber according to claim 18, wherein the grounding component is connected to the Faraday cage.

20. The grounding component is connected to the Faraday cage via a support that penetrates the first surface, The semiconductor processing chamber according to claim 17, wherein a portion of the support column extending outward from the faceplate is provided with a ceramic sleeve.

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