Lighting device

Abstract

To provide a scatterer which is superior in heat resistance, a luminaire and a method of manufacturing the scatterer.SOLUTION: A scatterer 20 comprises a scattering layer 22 which is formed on a substrate 21 directly or with another layer interposed, and has a floccose Fuzz structure having fibers entwined at random. The luminaire comprises the scatterer 20 and a light emission body 10 which emits light to the scatterer 20. A method of manufacturing the scatterer 20 comprises a plasma irradiation process of irradiating a metal film, formed on the substrate 21 directly or with another layer interposed, with plasma, and an oxidation process of oxidizing the metal film irradiated with the plasma in the plasma irradiation process.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] This invention , Teru Mingsou Place To relate to. [Background technology]

[0002] Light emitted from LEDs (light-emitting diodes) and lasers has higher directivity compared to incandescent light bulbs, etc. Therefore, in order for lighting devices using LEDs and lasers to uniformly illuminate a target, it is necessary to diffuse the light emitted from the LED or laser using a scatterer.

[0003] Patent Document 1 discloses a lighting device comprising an LED and a scattering body having a matrix material that is transparent to radiation and scattering particles made of a particle material embedded in the matrix material. [Prior art documents] [Patent Documents]

[0004] [Patent Document 1] Special Publication No. 2013-529842 [Overview of the project] [Problems that the invention aims to solve]

[0005] The scattering material described in Reference 1 is manufactured by dispersing scattering particles in a resin. Scattering materials made from resin have low heat resistance, and with the increasing power output of LEDs, thermal breakdown due to temperature increases in the scattering material and changes in scattering properties due to changes in refractive index have become problematic.

[0006] This invention was made to solve the above-mentioned problems and has excellent heat resistance. ru teru Mingsou Place The purpose is to provide it. [Means for solving the problem]

[0007] To achieve the object of the present invention, one aspect of the present invention Lighting device is characterized by comprising a scattering layer formed directly on a substrate or via another layer and having a fluffy Fuzz structure in which fibers are mated from random Scattering body and, The scattering body includes a light-emitting element that emits light, Equipped with, The scattering layer has the fibers containing metal oxide. , which is characterized by the above.

Effects of the Invention

[0010] According to the present invention, excellent heat resistance ru teru surface-mounted Place can be provided.

Brief Description of the Drawings

[0011] [Figure 1] It is a diagram showing a lighting device according to an embodiment. [Figure 2] It is a diagram showing a linear plasma device for manufacturing a scatterer according to an embodiment. [Figure 3] It is a flowchart showing the manufacturing process of a scatterer according to an embodiment. [Figure 4] (A) and (B) are diagrams for explaining the manufacturing process of a scatterer according to an embodiment. [Figure 5] It is a diagram showing a scatterer according to a modification. [Figure 6] It is a diagram showing a lighting device according to a modification. [Figure 7] It is a diagram showing the scattering layer of a scatterer according to an example. [Figure 8] It is an enlarged view of part VIII of FIG. 7. [Figure 9] It is a diagram showing a measuring device for measuring the scattering characteristics of a scatterer according to an example and a substrate according to a comparative example. [Figure 10] It is a diagram showing the transmittance for each wavelength of a scatterer according to an example and a substrate according to a comparative example. [Figure 11] It is a diagram showing a measuring device for measuring the scattering characteristics of a scatterer according to an example. [Figure 12] It is a diagram showing the transmittance of the scatterer according to each distance in the embodiment.

Mode for Carrying Out the Invention

[0012] Hereinafter, an illumination device, a scatterer, and a method for manufacturing the scatterer according to an embodiment of the present invention will be described with reference to the drawings.

[0013] As shown in FIG. 1, the illumination device 1 according to the embodiment includes a light emitter 10 and a scatterer 20. The illumination device 1 can uniformly irradiate light on the illumination target by scattering the light emitted from the light emitter 10 with the scatterer 20.

[0014] The light emitter 10 has electrodes 11a and 11b and emits light in the ultraviolet region, visible region, or infrared region. The light emitter 10 is not limited as long as it emits light in the ultraviolet region, visible region, or infrared region, and includes an LED (light emitting diode) or a laser (LASER: Light Amplification by Stimulated Emission of Radiation) transmitter. As the LED, a GaN-based LED, an aluminum gallium arsenide (AlGaAs)-based LED, a gallium arsenide phosphide (GaAsP)-based LED, an indium gallium nitride (InGaN)-based LED, a gallium nitride (GaN)-based LED, an aluminum gallium nitride (AlGaN)-based LED, etc. can be used. As the laser transmitter, an LD (Laser Diode), a fiber laser, a microchip laser, etc. can be used.

[0015] The scatterer 20 includes a substrate 21 and a scattering layer 22 formed on the substrate 21.

[0016] The substrate 21 only needs to be transparent in the wavelength range of the light emitted from the light-emitting body 10, and includes glass substrates, sapphire substrates, diamond substrates, etc. Glass substrates include quartz glass substrates and optical glass substrates. The substrate 21 preferably has high thermal conductivity so that it can cool the heat generated by the light emitted from the light-emitting body 10. Also, since the substrate 21 is heated during the manufacturing process, it is preferable that it has excellent heat resistance. For this reason, it is preferable to use a sapphire substrate or a diamond substrate as the substrate 21.

[0017] The scattering layer 22 is formed on the substrate 21 and is a layer that scatters light emitted from the light emitter 10. The thickness T1 of the scattering layer 22 should be any thickness that can scatter the light emitted from the light emitter 10, preferably 200 nm or more, more preferably 300 nm or more, and even more preferably 500 nm or more. Having these thicknesses makes it possible to scatter light. The larger the thickness T1 of the scattering layer 22, the longer wavelength light can be scattered. The upper limit of the thickness T1 of the scattering layer 22 is not particularly limited, but for example, it is 2000 nm.

[0018] Furthermore, the scattering layer 22 has a cotton-like fuzz structure in which fibers are randomly intertwined. An example of the scattering layer 22 is the shape shown in Figures 6 and 7, which was created in the example described later. The scattering layer 22 preferably contains fibers with a thickness of 10 nm to 100 nm. The scattering layer 22 also preferably has a fractal structure with self-similar irregularities in the range of 10 nm to 100 nm and a fractal dimension greater than 2. The fractal dimension is preferably 2.1 to 2.9. It is thought that light transmitted through the scattering layer 22 is diffusely reflected from the surface of the fibers, and also scattered by refraction after passing through the fibers. Because the scattering layer 22 has self-similar irregularities and does not have a specific length, interference of light of a specific wavelength does not occur, and it is possible to scatter light in the ultraviolet, visible, or infrared regions well. Furthermore, the fibers of the scattering layer 22 are preferably transparent in the wavelength range of light emitted from the light emitter 10 in order to increase transmittance. Furthermore, the fibers of the scattering layer 22 can have heat resistance by containing a metal oxide. Preferably, the fibers of the scattering layer 22 contain any of tungsten oxide, molybdenum oxide, titanium oxide, iron oxide, or nickel oxide.

[0019] Next, a linear plasma apparatus 100 for manufacturing the scattering body 20 having the above configuration will be described.

[0020] The linear plasma apparatus 100 irradiates a substrate 21 on which a metal film has been deposited with plasma such as He to form a fibrous nanostructure on the substrate 21. The metal film is not particularly limited as long as it forms a cotton-like fuzz structure in which metal fibers are randomly intertwined by plasma irradiation, but examples include tungsten, molybdenum, titanium, iron, nickel, etc.

[0021] As shown in Figure 2, the linear plasma apparatus 100 includes a vacuum chamber 110, a substrate holder 120, a thermometer 130, a plasma generation unit 140, a magnetic field generation unit 150, and a vacuum pump 160.

[0022] The vacuum chamber 110 forms a sealed space that houses the substrate holder 120 and other components that hold the substrate 21.

[0023] The substrate holder 120 is placed inside the vacuum chamber 110 and holds the substrate 21 on which a metal film has been deposited.

[0024] The thermometer 130 is a radiation thermometer that measures the surface temperature of the substrate 21 held in the substrate holder 120.

[0025] The plasma generation unit 140 is equipped with a LaB6 cathode and generates plasma such as He in a steady state using DC (Direct Current) arc discharge. The distance D1 between the substrate holder 120 and the plasma generation unit 140 is, for example, 1.5 m. The electron density of the He plasma generated by the plasma generation unit 140 is, for example, 1 × 10⁻¹⁶. 19 m -3 The plasma temperature is 5 eV.

[0026] The magnetic field generator 150 irradiates the substrate 21 held in the substrate holder 120 with plasma such as He generated in the plasma generation unit 140 using a magnetic field. The He fluence irradiated onto the substrate 21 is, for example, 1 to 20 × 10⁻¹⁰ 25 m -2 The incident ion energy of the plasma is, for example, 50 eV.

[0027] The vacuum pump 160 is for removing air from the vacuum chamber 110. The vacuum pump 160 reduces the pressure inside the vacuum chamber 110 to 1 × 10⁻¹⁰. -3 The pressure is reduced to below Pa. Note that when plasma is generated, helium gas is introduced, so the gas pressure inside the vacuum chamber 110 will be approximately 1 Pa.

[0028] Next, the manufacturing process for the scattering body 20 having the above configuration will be described.

[0029] The manufacturing process for the scattering body 20 comprises a film formation step (step S101), a plasma irradiation step (step S102), and an oxidation step (step S103), as shown in Figure 3.

[0030] In the film formation process (step S101), a metal film 23 is formed on the substrate 21 as shown in Figure 4(A). Preferably, a sapphire substrate or a diamond substrate is used as the substrate 21. The method for forming the metal film 23 is not particularly limited, but is preferably sputtering or vapor deposition. The metal film 23 may also be formed by plating. The metal film 23 is not particularly limited as long as a cotton-like fuzz structure in which metal fibers are randomly intertwined is formed by plasma irradiation, but includes, for example, tungsten, molybdenum, titanium, iron, nickel, etc. The thickness of the metal film 23 is preferably 50 nm to 200 nm. It is preferable to use a substrate 21 that has been cleaned before forming the metal film 23. For example, acetone, methanol, and deionized water may be used as the cleaning solution.

[0031] In the plasma irradiation step (step S102), the substrate 21 on which the metal film 23 was deposited in the film deposition step (step S101) is irradiated with plasma such as He using a linear plasma apparatus 100. For example, the He fluence irradiated onto the substrate 21 is 1 to 20 × 10⁻¹⁰. 25 m -2 The incident ion energy of the plasma is 50 eV, and the pressure inside the vacuum chamber 110 is 1 × 10⁻¹⁰ -3The energy is Pa. The incident ion energy is controlled by changing the bias of the substrate 21. When the plasma is irradiated, the surface temperature of the substrate 21 is controlled mainly by the electron density of the plasma. For example, if the metal film 23 is tungsten, the surface temperature of the substrate 21 is preferably heated to 1000K to 2000K. If the metal film 23 is molybdenum, the surface temperature of the substrate 21 is preferably heated to 850K to 1050K. The irradiation time of the He plasma is preferably 5 minutes to 1 hour, and more preferably 10 minutes to 30 minutes. When the He plasma is irradiated onto the substrate 21, nanometer-scale morphological changes are brought about in the metal film 23 by the formation and growth of He bubbles. Pinholes and protrusions are first formed on the surface of the metal film 23 formed on the substrate 21, followed by the formation of a cottony fuzz structure in which metal fibers are randomly intertwined. As a result, a metal film 24 is formed on the substrate 21, which has a cotton-like fuzz structure in which metal fibers are randomly intertwined, as shown in Figure 4(B).

[0032] In the oxidation step (step S103), the metal film 24, which has a fluffy, fuzz-like structure formed by randomly intertwined metal fibers, is oxidized by plasma irradiation (step S102) using plasma such as He. Specifically, an oxidation treatment is performed by chemical treatment or heating in an oxidizing atmosphere including an oxygen atmosphere or air. When heating in air, the temperature of the oxidation treatment should be any temperature that can oxidize the metal film 24, preferably 500°C to 700°C. The heating treatment time is preferably 1 hour to 24 hours, more preferably 3 hours to 12 hours. By performing the oxidation treatment, the metal fibers formed on the substrate 21 are oxidized and change into a fluffy, fuzz-like structure in which randomly intertwined metal oxide fibers, which are transparent in the wavelength range of light emitted from the light emitter 10, are formed. As a result, a scattering layer 22 with a fluffy, fuzz-like structure in which randomly intertwined metal oxide fibers are formed on the substrate 21, as shown in Figure 1.

[0033] As described above, according to the illumination device 1, the scatterer 20, and the manufacturing method of the scatterer 20 of this embodiment, a scatterer 20 with excellent heat resistance can be obtained by providing a scattering layer 22 having a cotton-like fuzz structure in which fibers are randomly intertwined. Furthermore, since the scattering layer 22 can exert its effect even at around 200 nm to 500 nm, miniaturization is easy. For this reason, it can be used in applications where scattered light is required in small or minute areas, and in applications where scattered light is required with high-power light. In addition, because the scatterer 20 has a fractal structure, it can function as an optical element that homogenizes highly directional light from an LED or laser and reduces the coherence (interference) of the light. For this reason, it can be used for illumination of high-performance microscopes where it is necessary to reduce coherence because interference reduces the resolution. In contrast, conventional light scatterers are made by methods such as dispersing microparticles in resin. Light scatterers made of resin have the problem of low heat resistance and cannot be used with high-power light input. Also, because the scattering efficiency is low, the volume is large and there are limitations to miniaturization.

[0034] (modified version) In the above-described embodiment, an example was given in which a scattering layer 22 is formed on the substrate 21 of the scattering body 20. The scattering body 20 only needs to be able to scatter light by comprising a scattering layer 22, and may also include an intermediate layer 25 between the substrate 21 and the scattering layer 22, as shown in Figure 5. The intermediate layer 25 is preferably a transparent film so as to transmit light. The intermediate layer 25 is formed as follows. In the plasma irradiation step (step S102) of the manufacturing process of the scattering body 20 described above, the metal film 23 formed on the substrate 21 is irradiated with plasma, and a cotton-like fuzz structure in which metal fibers are randomly intertwined is formed on the surface of the metal film 23, in which case a part of the metal film 23 remains as is. The remaining metal film 23 is transformed into an oxide metal film which is the intermediate layer 25 in the oxidation step (step S103). For example, if the scattering layer 22 has a cotton-like fuzz structure in which tungsten oxide fibers are randomly intertwined, the intermediate layer 25 includes a tungsten oxide layer. Furthermore, before forming the metal film 23 in the film formation process (step S101), an intermediate layer 25 may be formed for purposes such as improving the adhesion between the substrate 21 and the metal film 23.

[0035] In the above-described embodiment, an example was given in which a plasma such as He is irradiated using a linear plasma apparatus 100 in the plasma irradiation step (step S102). In the plasma irradiation step (step S102), it is sufficient to irradiate the substrate 21 on which the metal film 23 has been deposited with plasma, and a plasma apparatus having a structure other than the linear plasma apparatus 100 may be used. For example, the scatterer 20 can also be created by using an RF (Radio Frequency) plasma apparatus or a magnetron sputtering apparatus in the plasma irradiation step (step S102). Furthermore, it is thought that similar results can be obtained by using a plasma other than He, such as Ne.

[0036] Furthermore, although the above-described embodiment described an example in which the scattering layer 22 contains a metal oxide, the scattering layer 22 may also contain additional additives. For example, two-dimensional crystals such as sulfur sulfide may be included as additives. In this way, a scattering layer 22 that exhibits a nonlinear response to light intensity can be obtained. In this case, the transmittance when the scattering layer 22 is irradiated with light weaker than a reference value is smaller than the transmittance when it is irradiated with light stronger than a reference value. In this way, by including other additives, the scattering layer 22 can acquire properties other than light scattering.

[0037] Furthermore, in the above-described embodiment, a lighting device 1 comprising a light-emitting element 10 and a scatterer 20 as separate components was explained. However, the lighting device 1 may be manufactured with the light-emitting element 10 and the scatterer 20 as an integrated unit. When the light-emitting element 10 is formed on a substrate 21 such as a sapphire substrate, as shown in Figure 6, a scattering layer 22 may be formed on the surface of the substrate 21 and the light-emitting element 10 may be formed on the back surface of the substrate 21. In this way, a smaller lighting device 1 can be created. [Examples]

[0038] The effects of the scatterer 20 are demonstrated below by examples. These examples illustrate one embodiment of the present disclosure, and the present disclosure is not limited thereto.

[0039] First, a method for manufacturing the scatterer 20 of Example 1 will be described.

[0040] In the film formation step (step S101), using an RF magnetron sputtering apparatus, a tungsten film was formed as the metal film 23 on the substrate 21. As the substrate 21, a quartz glass substrate with a size of 10×10×2 mm was used. The thickness of the tungsten film was 100 nm. The substrate 21 was cleaned before forming the tungsten film.

[0041] In the plasma irradiation step (step S102), the substrate 21 on which the tungsten film was formed in the film formation step (step S101) was irradiated with He plasma. The plasma irradiation was performed using NAGDIS-II (Nagoya University Divertor Plasma Simulator II), which is a linear plasma apparatus 100. The distance D1 between the substrate holder 120 and the plasma generation unit 140 was 1.5 m. The electron density of the plasma was 1×10 19 m -3 , the plasma temperature was 5 eV. The He fluence irradiated on the substrate 21 was 20×10 25 m -2 , the incident ion energy of the plasma was 50 eV. The pressure in the vacuum chamber 110 was 1×10 -3 Pa. As a result, the surface temperature of the substrate 21 was heated to 1400 K. The He plasma irradiation time was 15 minutes. By the He plasma irradiation, a tungsten layer having a fluffy Fuzz structure in which tungsten fibers are aligned from random was formed.

[0042] In the oxidation step (step S103), the substrate 21, which had a tungsten layer having a cotton-like fuzz structure in which tungsten fibers were randomly intertwined in the plasma irradiation step (step S102), was heat-treated in air. The heat treatment temperature was 600°C and the heat treatment time was 6 hours. As a result of the heat treatment, the tungsten film formed on the substrate 21, which had a cotton-like fuzz structure in which tungsten fibers were randomly intertwined, was oxidized and changed into a tungsten oxide film having a cotton-like fuzz structure in which tungsten oxide (WO3) fibers were randomly intertwined. This resulted in the scattering body 20 of Example 1, which has a scattering layer 22 having a cotton-like fuzz structure in which tungsten oxide fibers were randomly intertwined and is transparent to ultraviolet to near-infrared light.

[0043] As shown in Figures 7 and 8, the scattering layer 22 of the scattering body 20 in Example 1 had a cotton-like fuzz structure in which tungsten oxide fibers were randomly intertwined. The scattering layer 22 also contained fibers with a thickness of 10 nm to 100 nm. The scattering layer 22 had self-similar irregularities in the range of 10 nm to 100 nm and had a fractal structure with a fractal dimension greater than 2. The thickness of the scattering layer 22 was 500 nm.

[0044] Furthermore, a substrate for Comparative Example 1 was prepared. Specifically, a 10 × 10 × 2 mm quartz glass substrate was coated with a 100 nm thick tungsten film, which was then oxidized in an oxidizing atmosphere to obtain the substrate for Comparative Example 1, in which a tungsten oxide film was formed on the quartz glass substrate.

[0045] Next, the scattering characteristics of the scatterer 20 in Example 1 and the substrate in Comparative Example 1 were measured.

[0046] Using the measuring device 200 shown in Figure 9, the scattering characteristics were measured by irradiating the scatterer 20 of Example 1 and the substrate of Comparative Example 1 with light and measuring the transmittance for each wavelength of transmitted light.

[0047] The measuring device 200 comprises a light source 201 and a photometer 202. The light source 201 emits light in the range of 200 nm to 5000 nm. The photometer 202 measures the transmittance of light at each wavelength transmitted through the scatterer 20 of Example 1 or the substrate of Comparative Example 1. The photometer 202 is positioned on the optical axis of the light emitted from the light source 201, at a distance D2 from the scatterer 20 of Example 1 or the substrate of Comparative Example 1. The distance D2 is 200 mm.

[0048] Figure 10 shows the transmittance of light transmitted through the scatterer 20 of Example 1 and the substrate of Comparative Example 1 for each wavelength.

[0049] In the scattering material 20 of Example 1, it was found that the transmittance of light transmitted through the scattering material 20 of Example 1, as observed by the photometer 202, was low in the wavelength range of 200 nm to 900 nm. This is because the light in the wavelength range of 200 nm to 900 nm irradiated from the light source 201 is scattered, and less light reaches the position of the photometer 202, which is positioned on the optical axis. Therefore, it was found that the scattering material 20 of Example 1 scatters light irradiated from the light source 201 in the wavelength range of 200 nm to 900 nm, which is in the near-ultraviolet to near-infrared region. In the wavelength range longer than 900 nm, it is thought that scattering became less effective as the wavelength increased because the thickness of the scattering layer was 500 nm. For this reason, it is thought that increasing the thickness of the scattering layer would result in greater scattering even in the wavelength range longer than 900 nm.

[0050] In contrast, the substrate of Comparative Example 1 showed high transmittance of light transmitted through the substrate, as observed by the photometer 202, in the wavelength range of 200 nm to 900 nm. This is because the light in the wavelength range of 200 nm to 900 nm irradiated from the light source 201 was not scattered, resulting in a greater amount of light reaching the position of the photometer 202, which was positioned on the optical axis. The variation in light transmittance with wavelength is due to interference by the film thickness or absorption by the tungsten film. Therefore, it was found that the substrate of Comparative Example 1 could not scatter the light irradiated from the light source 201.

[0051] Next, using the measuring device 210 shown in Figure 11, the scattering characteristics were measured by irradiating the scattering body 20 of Example 1 with laser light and measuring the transmittance at each distance from the scattering body 20.

[0052] The measuring device 210 comprises a laser light source 211 and a photometer 212. The laser light source 211 is a He-Ne laser light source that emits laser light at 632.8 nm. The photometer 212 measures the transmittance of light that has passed through the scatterer 20 of Example 1. The photometer 212 is movably positioned on the optical axis of the light emitted from the laser light source 211 and measures the transmittance at each position at a distance D3 from the scatterer 20 of Example 1.

[0053] Figure 12 shows the transmittance of light transmitted through the scatterer 20 of Example 1 at different distances.

[0054] The transmittance of light transmitted through the scatterer 20 in Example 1 decreases as the distance D3 increases. At D3=10mm, the transmittance is approximately 18%, at D3=15mm, it is approximately 7%, at D3=20mm, it is 3%, and at D3=35mm, it is approximately 1%. The transmittance is thought to be inversely proportional to the square of the distance D3, demonstrating that the scatterer 20 in Example 1 scatters light. Furthermore, it was found that the scatterer 20 in Example 1 can scatter even laser light.

[0055] As described above, by measuring the transmittance of the scatterer 20 in Example 1 at each wavelength, it was found that the scatterer 20 scattered light irradiated from the light source 201 in the wavelength range from 200 nm to 900 nm, which is in the near-ultraviolet to near-infrared region. In the wavelength range longer than 900 nm, it is thought that scattering became less effective as the wavelength increased because the thickness of the scattering layer was 500 nm. Therefore, it is thought that the scattering effect can be obtained even in the wavelength range longer than 900 nm by increasing the thickness of the scattering layer. Furthermore, it is thought that the transmittance of the light transmitted through the scatterer 20 in Example 1 is inversely proportional to the square of the distance, thus demonstrating that the scatterer 20 in Example 1 scatters light. In addition, it was found that the scatterer 20 in Example 1 can scatter even laser light. Therefore, it can be used in lighting devices that use laser light as a light source. In the above-described Example 1, the case in which the scattering layer contains tungsten oxide was demonstrated, but the scattering layer only needs to have a fuzz structure, and it is thought that similar results can be obtained by including metal oxides having a fuzz structure such as molybdenum oxide, titanium oxide, iron oxide, and nickel oxide. Furthermore, in the above-described Example 1, an example was given in which plasma irradiation was performed using a linear plasma apparatus 100 in the plasma irradiation step (step S102). Although details are not described here, the scatterer 20 could also be created using an RF plasma apparatus or a magnetron sputtering apparatus in the plasma irradiation step (step S102).

[0056] This invention allows for various embodiments and modifications without departing from the broad spirit and scope of the invention. Furthermore, the embodiments described above are for illustrative purposes only and do not limit the scope of the invention. In other words, the scope of the invention is indicated not by the embodiments, but by the claims. Various modifications made within the scope of the claims and the equivalent scope of the meaning of the invention are considered to be within the scope of this invention. [Explanation of Symbols]

[0057] 1…Lighting device 10…Luminous body 11a, 11b...electrodes 20...Scatterer 21… Circuit board 22...Scattering layer 23, 24… Metal film 25…Middle class 100… Linear plasma device 110...Vacuum chamber 120... Circuit board holder 130...Thermometer 140...Plasma generation section 150... Magnetic field generation unit 160... Vacuum pump 200, 210... Measuring devices 201...Light source 202, 212...Photometer 211… Laser light source T1...Thickness D1~D3...Distance

Claims

1. A scattering body comprising a scattering layer formed directly on a substrate or via another layer, having a fluffy, fuzzy structure in which fibers are randomly intertwined, The scattering body includes a light-emitting element that emits light, Equipped with, The scattering layer has the fibers containing metal oxide, A lighting device characterized by the following features.

2. The scattering layer includes the fibers having a thickness of 10 nm to 100 nm. The lighting device according to feature 1.

3. The scattering layer has a thickness of 200 nm or more. The lighting device according to claim 1 or 2.

4. The scattering layer has self-similar irregularities in the range of 10 nm to 100 nm and has a fractal structure with a fractal dimension greater than 2. A lighting device according to any one of claims 1 to 3.

5. The substrate includes any of the following: a sapphire substrate, a quartz glass substrate, an optical glass substrate, or a diamond substrate. A lighting device according to any one of claims 1 to 4.

6. The scattering layer includes a two-dimensional crystal. A lighting device according to any one of claims 1 to 5.

7. The light-emitting element is formed on the substrate having the scattering element. A lighting device according to any one of claims 1 to 6.

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