Power converter

Abstract

To provide a power conversion device which is downsized and reduced in cost.SOLUTION: A power conversion device comprises: a plurality of power semiconductor elements; a magnetic component including a target coil which is a coil connected to a target semiconductor element which is at least one power semiconductor element; and a substrate including a drive circuit for driving the at least one power semiconductor element. The substrate includes a through hole, and the plurality of power semiconductor elements and the magnetic component are disposed at one side of the substrate. A connection part is formed by connecting an element terminal, which is connected to the target semiconductor element, with a coil terminal provided in an end portion of the target coil and the connection part extends toward the through hole and penetrates the through hole.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] This application relates to a power conversion device.

Background Art

[0002] In electrified vehicles such as hybrid vehicles, plug-in hybrid vehicles, electric vehicles, and fuel cell vehicles, due to the need to secure cabin space and meet low-cost requirements, devices such as power conversion devices mounted on electrified vehicles are required to be miniaturized and cost-reduced. In a power conversion device that controls output power based on input power, there is a tendency towards large current as the variety of in-vehicle options increases. To pass a large current through the substrate of the power conversion device, a copper foil pattern with sufficient thickness and width is required. When such a pattern is provided on the substrate, there is a concern that the power conversion device will become larger in size and the cost will increase. Therefore, a configuration using a bus bar instead of the copper foil pattern on the substrate is common.

[0003] A configuration for miniaturizing and cost-reducing a power conversion device using a bus bar has been disclosed (see, for example, Patent Document 1). In the configuration disclosed in Patent Document 1, a bus bar structure connected to a power source or a load, etc., and a terminal portion of a module having a semiconductor switching element are connected by TIG welding. By providing a connection portion between the bus bar structure and the terminal portion of the module in this way, a connection member such as a screw or a substrate becomes unnecessary at the connection portion, and the connection member can be reduced, so that the power conversion device can be miniaturized and cost-reduced.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In the above-mentioned Patent Document 1, the busbar structure and the module terminals are connected by TIG welding, which allows for miniaturization and cost reduction of the power converter. However, in the above-mentioned power converter, in order to further miniaturize it, the semiconductor switching element and magnetic component and the substrate on which the drive circuit for driving the semiconductor switching element is mounted may be arranged so as to overlap when viewed perpendicular to the surface of the substrate, and the connection part may be mounted so as to face the direction of the substrate. Since the substrate is provided with the drive circuit and patterns for connecting the semiconductor switching element and the power supply, it is necessary to place the substrate near the connection part. In this configuration, in order to prevent interference between the substrate and the connection part, it is necessary to secure a distance between them, which results in wasted space and has the problem of increasing the size of the power converter.

[0006] Furthermore, this configuration increases the distance between the semiconductor switching element and the substrate, requiring extension members to connect the drive terminals connected to the semiconductor switching element to the substrate, thus increasing the cost of the power converter. Additionally, extending the drive terminals of the semiconductor switching element by the extension members increases parasitic inductance, leading to increased noise, thus requiring additional noise suppression components. The addition of these additional noise suppression components results in a larger and more expensive power converter.

[0007] Therefore, the present invention aims to provide a power conversion device that is miniaturized and has a lower cost. [Means for solving the problem]

[0008] The power conversion device disclosed herein comprises a plurality of power semiconductor elements, a magnetic component having a target winding which is a winding connected to at least one power semiconductor element which is a target semiconductor element, and a substrate having a drive circuit for driving at least one power semiconductor element, wherein the substrate has through holes, the plurality of power semiconductor elements and the magnetic component are arranged on one side of the substrate, and a connection portion is formed by connecting element terminals connected to the target semiconductor element and winding terminals provided at the end of the target winding, the connection portion extends toward the through holes and penetrates the through holes The substrate has a power supply terminal section to which the power supply terminal is connected, and an input terminal section connected to an externally provided power supply. The power supply terminal section and the input terminal section are connected by a conductive pattern provided on the substrate. The substrate has a first region including the conductive pattern and a second region which is insulated from the first region. The through hole is provided in the second region. It is something that exists. [Effects of the Invention]

[0009] The power conversion device disclosed in this application comprises a plurality of power semiconductor elements, a magnetic component having a target winding connected to at least one power semiconductor element (a target semiconductor element), and a substrate having a drive circuit for driving at least one power semiconductor element. The substrate has through holes, and the plurality of power semiconductor elements and magnetic components are arranged on one side of the substrate. An element terminal connected to the target semiconductor element and a winding terminal provided at the end of the target winding are connected to form a connection portion. Since the connection portion extends toward and penetrates the through holes, the substrate and the connection portion do not come into contact, and the distance between the power semiconductor elements and magnetic components and the substrate can be shortened, thus reducing wasted space and enabling miniaturization of the power conversion device. Furthermore, since the distance between the drive circuit on the substrate and the power semiconductor elements can be shortened, extension members for extending the drive terminals connecting the drive circuit and the power semiconductor elements are unnecessary, and the drive terminals can be shortened. Because the drive terminals are shortened, additional noise suppression components are unnecessary, enabling miniaturization and cost reduction of the power conversion device. [Brief explanation of the drawing]

[0010] [Figure 1] This figure shows the circuit configuration of the power conversion device according to Embodiment 1. [Figure 2]This is a plan view showing a schematic of the power conversion device according to Embodiment 1. [Figure 3] This is a cross-sectional view of the power converter taken at the AA section in Figure 2. [Figure 4] This is a plan view of the module of the power conversion device according to Embodiment 1. [Figure 5] This is a side view of a module of a power conversion device according to Embodiment 1. [Figure 6] This diagram schematically shows the primary and secondary windings of the power converter according to Embodiment 1. [Modes for carrying out the invention]

[0011] The power conversion device according to the embodiment of the present application will be described below with reference to the drawings. In each drawing, the same or equivalent components and parts will be denoted by the same reference numerals.

[0012] Embodiment 1. Figure 1 shows the circuit configuration of the power converter 1000 according to Embodiment 1, Figure 2 is a schematic plan view of the power converter 1000, shown through the substrate 200, Figure 3 is a cross-sectional view of the power converter 1000 cut at the AA cross-sectional position in Figure 2, Figure 4 is a plan view of module 22 of the power converter 1000, and Figure 5 is a side view of module 22 of the power converter 1000. Figures 4 and 5 show the resin member 19 removed, with only the outer shape of the resin member 19 shown. Figure 5 is a side view of Figure 4 seen from below, with the bonding wire shown in Figure 4 omitted. The power converter 1000 is a device that converts input current from DC to AC, AC to DC, or input voltage to a different voltage. In this embodiment, the power converter 1000 converts the DC voltage of a DC power supply into a secondary DC voltage isolated by an isolation transformer 2, and outputs a DC voltage converted to a load such as a battery.

[0013] <Circuit configuration of power converter 1000> An example of the main circuit configuration of the power converter 1000 is explained with reference to Figure 1. In Figure 1, the left side is the input side and the right side is the output side. The power converter 1000 is connected to a DC power supply at the P and N portions on the input side. A load such as a low-voltage battery is connected to the output terminal 23 on the output side of the power converter 1000. The power converter 1000 includes a plurality of power semiconductor elements and a magnetic component having a target winding which is a winding connected to a target semiconductor element which is at least one power semiconductor element.

[0014] Multiple power semiconductor elements are provided to constitute a power conversion circuit that converts the power supplied to the primary winding. Multiple power semiconductor elements are also provided to constitute a rectifier circuit that rectifies the power output from the secondary winding. In this embodiment, multiple power semiconductor elements include a first set of power semiconductor elements and a second set of power semiconductor elements that constitute a power conversion circuit 1 that converts the power supplied to the primary winding 2a. The configuration of the power semiconductor elements constituting the power conversion circuit is not limited to this. The power conversion circuit 1 converts the input DC voltage into AC voltage. The first set of power semiconductor elements consists of semiconductor switching elements 1a and 1b, and the second set of power semiconductor elements consists of semiconductor switching elements 1c and 1d. In this embodiment, multiple power semiconductor elements include a first rectifier power semiconductor element and a second rectifier power semiconductor element that constitute a rectifier circuit 3 that rectifies the power output from the secondary winding 2b. The rectifier circuit 3 rectifies the output of the isolation transformer 2. The first rectifier power semiconductor element is diode 3a, and the second rectifier power semiconductor element is diode 3b. In this embodiment, the power semiconductor elements constituting the rectifier circuit 3 are diodes 3a and 3b, but the power semiconductor elements constituting the rectifier circuit 3 are not limited to diodes, and may be semiconductor switching elements having a gate terminal, similar to the power conversion circuit 1.

[0015] In this embodiment, the power conversion device 1000 includes two magnetic components. As one magnetic component, an isolation transformer 2 having a primary winding 2a and a secondary winding 2b is provided. The isolation transformer 2 transmits the AC voltage output from the power conversion circuit 1 from the primary winding 2a to the secondary winding 2b, converts the voltage, and outputs it. The power conversion circuit 1 is connected to the primary winding 2a. The secondary side of the isolation transformer 2 is of the center tap type, and the center tap terminal is connected to GND. The anode terminals of the diodes 3a and 3b of the rectifier circuit 3 are connected to the secondary winding 2b, and the rectifier circuit 3 rectifies the output of the secondary winding 2b.

[0016] As the other magnetic component, a smoothing reactor 4 having a reactor winding 4a that smooths the output of the rectifier circuit 3 is provided. The cathode terminals of the diodes 3a and 3b are connected to the input side of the smoothing reactor 4. The power conversion device 1000 is connected to the output side of the smoothing reactor 4 and further includes a smoothing capacitor 24 that smooths the output of the smoothing reactor 4. A DC voltage is output from the rectifier circuit 3 to the load via the smoothing reactor 4 and the smoothing capacitor 24. In this embodiment, the power conversion device 1000 includes two magnetic components, but it is not limited to this, and there may be only one magnetic component.

[0017] The semiconductor switching elements 1a, 1b, 1c, and 1d are, for example, MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) with built-in diodes between the source and drain. Note that the semiconductor switching elements 1a, 1b, 1c, and 1d are not limited to MOSFETs, and may also be self-extinguishing semiconductor switching elements such as IGBTs (Insulated Gate Bipolar Transistors) with diodes connected in anti-parallel. The semiconductor switching elements 1a, 1b, 1c, and 1d are formed on a semiconductor substrate made of a semiconductor material such as silicon (Si), silicon carbide (SiC), or gallium nitride (GaN). For the semiconductor switching elements 1a, 1b, 1c, and 1d, a wide bandgap semiconductor using a substrate made of silicon carbide (SiC) or gallium nitride (GaN) may be used.

[0018] A configuration related to driving the power conversion circuit 1 will be described. The power conversion device 1000 includes a gate driver 5, gate resistors 6, a pulse transformer 7, gate resistors 8a, 8b, 8c, and 8d, and a control unit 100. The gate signals generated by the control unit 100 are input to the respective gates of the semiconductor switching elements 1a, 1b, 1c, and 1d via the gate driver 5, gate resistors 6, pulse transformer 7, and gate resistors 8a, 8b, 8c, and 8d to drive the respective semiconductor switching elements 1a, 1b, 1c, and 1d.

[0019] Details of driving the power conversion circuit 1 will be described. The power conversion device 1000 includes a sensor (not shown) for measuring the input / output voltage and input / output current. The output of the sensor is input to the control unit 100. The control unit 100 drives the semiconductor switching elements 1a, 1b, 1c, and 1d according to a desired topology based on measured values such as the input / output voltage and input / output current of the power conversion device 1000. The gate signal output from the control unit 100 is transmitted to the gate driver 5.

[0020] The gate signal transmitted to the gate driver 5 is output to the power conversion circuit 1 via the pulse transformer 7. The power conversion circuit 1 is driven one arm at a time by the gate signal, using a combination of semiconductor switching elements 1a, 1d and semiconductor switching elements 1b, 1c. The use of the pulse transformer 7 provides isolation between the high-voltage and low-voltage sides. Furthermore, since there is no need to add a new power supply circuit to drive the semiconductor switching elements, the power supply circuit can be configured to a minimum. In this embodiment, the polarities of the output sides are reversed so that semiconductor switching element 1b is turned off when semiconductor switching element 1a is turned on. This configuration prevents arm short circuits. While this embodiment uses the pulse transformer 7 to isolate the high-voltage and low-voltage sides, it is not limited to this; an isolation driver may also be used to isolate the high-voltage and low-voltage sides.

[0021] The gate resistors 6 and 8a, 8b, 8c, and 8d are provided before and after the pulse transformer 7. By adjusting the waveform of the signal applied to the semiconductor switching elements 1a, 1b, 1c, and 1d using the gate resistors 6 and 8a, 8b, 8c, and 8d, the rise and fall times of the voltage and current during the switching operation of the power conversion circuit 1 can be adjusted. This adjustment can suppress surge voltages during switching operation. By suppressing surge voltages, the generation of noise caused by the switching of the power conversion circuit 1 can be suppressed. In Figure 1, only one element of each of the gate resistors 6 and 8a, 8b, 8c, and 8d is shown, but each of the gate resistors 6 and 8a, 8b, 8c, and 8d may be configured in parallel, in series, or in combination of multiple elements.

[0022] When semiconductor switching elements 1a and 1d are ON, the current input from P passes through semiconductor switching element 1a, the primary winding 2a of the isolation transformer 2, and semiconductor switching element 1d to reach N. Similarly, when semiconductor switching elements 1b and 1c are ON, the current input from P passes through semiconductor switching element 1c, the primary winding 2a of the isolation transformer 2, and semiconductor switching element 1b to reach N.

[0023] The voltage input to the primary winding 2a is transmitted to the secondary winding 2b, where it is transformed by a multiple of the turns ratio between the primary and secondary windings 2a and 2b of the isolation transformer 2. The current on the secondary side is calculated as (input voltage × input current) / output voltage. When the current is large, busbars are mainly used to connect the components. The power output through the isolation transformer 2 is rectified by diodes 3a and 3b, then smoothed by a smoothing reactor 4, and output to the load.

[0024] <Configuration of power converter 1000> An example of the implementation configuration of the power converter 1000 will be described. As shown in Figures 2 and 3, the power converter 1000 comprises a module 22, an isolation transformer 2, a smoothing reactor 4, a substrate 200, and a cooler 300. The power conversion circuit 1 and the rectifier circuit 3 are sealed in the same package. In this embodiment, as shown in Figure 4, the power conversion circuit 1 and the rectifier circuit 3 are sealed and integrated with a resin member 19 to form the module 22. The configuration of the module 22 is not limited to this, and a configuration in which only the power conversion circuit 1 or the rectifier circuit 3 is sealed in the same package is also possible, for example, if only the power conversion circuit 1 is sealed and integrated with the resin member 19. Alternatively, the power conversion circuit 1 and the rectifier circuit 3 may each be sealed in the same package. Furthermore, the power conversion circuit 1 and the rectifier circuit 3 may be housed in a case, and the case may be filled with a resin member. Furthermore, the power conversion circuit 1 and the rectifier circuit 3 are not integrated, and the module 22 is not formed; for example, the power conversion circuit 1 and the rectifier circuit 3 may each be separate discrete components.

[0025] In this embodiment, the substrate 200 shown in Figures 2 and 3 is a multilayer substrate. The substrate 200 has a drive circuit that drives at least one power semiconductor element. In this embodiment, the power semiconductor elements driven by the drive circuit are semiconductor switching elements 1a, 1b, 1c, and 1d (not shown in Figure 2). The drive circuit is composed of control components 15 provided on the substrate 200. Although only one control component 15 is shown in Figure 2, the drive circuit is composed of multiple control components. Control lead terminals 46, which are drive terminals connected to each of the semiconductor switching elements 1a, 1b, 1c, and 1d, are connected to the substrate 200. The control component 15 is connected to the control lead terminals 46. Power supply terminals are provided that are connected to the power semiconductor elements that constitute the power conversion circuit. In this embodiment, the module 22 has power supply terminals 43 connected to each of the first set of power semiconductor elements and the second set of power semiconductor elements. The substrate 200 has a power terminal connection section 42a to which a power terminal 43 is connected, and an input terminal section 42 connected to an externally provided power supply (not shown). The power terminal connection section 42a and the input terminal section 42 are connected by a conductive pattern 44 provided on the substrate 200. The conductive pattern 44 is a high-voltage area. The substrate 200 has a first region 45 formed from the conductive pattern 44 and an insulating portion around the conductive pattern 44, and a second region 45a which is an area insulated from the first region 45. The first region 45 is the area enclosed by the dashed line in Figure 2. The through-holes in the substrate 200, which are the main part of this application, will be described later.

[0026] The cooler 300 has a cooling surface 300a. The cooler 300 is made of a metal material with excellent thermal conductivity, such as copper or aluminum. A module 22 having multiple power semiconductor elements and magnetic components, the isolation transformer 2 and the smoothing reactor 4, are arranged side by side on the cooling surface 300a. The module 22, the isolation transformer 2, and the smoothing reactor 4 are thermally connected to the cooler 300. The module 22 having multiple power semiconductor elements and magnetic components, the isolation transformer 2 and the smoothing reactor 4, are arranged on one side of the substrate 200. In this embodiment, the surface of the substrate 200 and the cooling surface 300a are parallel. This configuration allows for miniaturization of the power converter 1000. The substrate 200 is fixed to the cooler 300 by screws 27. This configuration allows for efficient cooling of the substrate 200. Furthermore, it improves the vibration resistance of the substrate 200.

[0027] <Configuration of Module 22> An example of the implementation configuration of module 22 will be explained using Figures 4 and 5. In the figures, a power conversion circuit 1 is provided on the left side, and a rectifier circuit 3 is provided on the right side. Module 22 has six lead frames 17, 38a to 38d, and 39. The lead frames are, for example, copper plates. Each of the semiconductor switching elements 1a, 1b, 1c, and 1d is, for example, a semiconductor chip having a drain pad on its bottom surface and a gate pad and a source pad on its top surface. Diodes 3a and 3b are, for example, semiconductor chips having a cathode pad on its bottom surface and an anode pad on its top surface.

[0028] The semiconductor switching element 1a has a gate pad 33a and a source pad 34a on its upper surface and is mounted on a lead frame 38a on the side of the drain pad on its bottom surface. The lead frame 38a has a power supply terminal 43. The semiconductor switching element 1b has a gate pad 33b and a source pad 34b on its upper surface and is mounted on a lead frame 38b on the side of the drain pad on its bottom surface. The lead frame 38b has a lead terminal 13. The semiconductor switching element 1c has a gate pad 33c and a source pad 34c on its upper surface and is mounted on a lead frame 38c on the side of the drain pad on its bottom surface. The lead frame 38c has a power supply terminal 43. The semiconductor switching element 1d has a gate pad 33d and a source pad 34d on its upper surface and is mounted on a lead frame 38d on the side of the drain pad on its bottom surface. The lead frame 38d has a lead terminal 14.

[0029] The source pad 34a and the lead frame 38b are connected by bonding wire 30a. The source pad 34c and the lead frame 38d are connected by bonding wire 30c. The connections between the source pad 34a and the lead frame 38b, and between the source pad 34c and the lead frame 38d, are not limited to bonding wires; busbars may also be used. As shown in Figure 2, the lead terminal 13 is connected to the first winding terminal 9 provided at the end of the primary winding 2a of the isolation transformer 2. The lead terminal 14 is connected to the second winding terminal 10 provided at the end of the primary winding 2a of the isolation transformer 2. The first winding terminal 9 is the positive terminal of the primary winding 2a, and the second winding terminal 10 is the negative terminal of the primary winding 2a. The connections between the lead terminal 13 and the first winding terminal 9, and between the lead terminal 14 and the second winding terminal 10, can be made by welding, for example. These connections are not limited to welding; screws are also acceptable as long as the connected parts pass through the through holes described later.

[0030] As shown in Figure 4, the lead frame 39 is provided between the lead frames 38a and 38b and the lead frames 38c and 38d. The lead frame 39 has power terminals 43. The source pad 34b and the lead frame 39 are connected by bonding wires 30b. The source pad 34d and the lead frame 39 are connected by bonding wires 30d. The connections between the source pad 34b and the lead frame 39, and between the source pad 34d and the lead frame 39, are not limited to bonding wires; busbars may also be used.

[0031] Module 22 has control lead terminals 36a, 36b, 36c, 36d, and control lead terminals 37a, 37b, 37c, 37d. Note that in Figure 2, these control lead terminals are not shown individually but are shown collectively as control lead terminal 46. Gate pad 33a and control lead terminal 36a are connected by bonding wire 29a. Gate pad 33b and control lead terminal 36b are connected by bonding wire 29b. Gate pad 33c and control lead terminal 36c are connected by bonding wire 29c. Gate pad 33d and control lead terminal 36d are connected by bonding wire 29d. Control lead terminals 36a, 36b, 36c, and 36d are connected to control component 15.

[0032] Source pad 34a and control lead terminal 37a are connected by bonding wire 31a, and the reference potential for gate driving of semiconductor switching element 1a is monitored. Source pad 34b and control lead terminal 37b are connected by bonding wire 31b, and the reference potential for gate driving of semiconductor switching element 1b is monitored. Source pad 34c and control lead terminal 37c are connected by bonding wire 31c, and the reference potential for gate driving of semiconductor switching element 1c is monitored. Source pad 34d and control lead terminal 37d are connected by bonding wire 31d, and the reference potential for gate driving of semiconductor switching element 1d is monitored. Control lead terminals 37a, 37b, 37c, and 37d are connected to control component 15. In this embodiment, the reference potential for gate driving is monitored from the source pad, but this is not the only option. A gate driving pad may be provided on the semiconductor switching element separately from the source pad, and the gate driving pad and the control lead terminal may be connected by bonding wire.

[0033] Diode 3a has an anode pad 35a on its upper surface and is mounted on the lead frame 17 with its cathode pad on the bottom surface. Diode 3b has an anode pad 35b on its upper surface and is mounted on the lead frame 17 with its cathode pad on the bottom surface. The lead frame 17 has a cathode terminal 17a. Module 22 has anode terminals 16 and 18. Anode pad 35a and anode terminal 16 are connected by a bonding wire 32a. Anode pad 35b and anode terminal 18 are connected by a bonding wire 32b.

[0034] As shown in Figure 2, the anode terminal 16 is connected to a first winding terminal 11 located at the end of the secondary winding 2b of the isolation transformer 2. The anode terminal 18 is connected to a second winding terminal 12 located at the end of the secondary winding 2b of the isolation transformer 2. The first winding terminal 11 is the positive terminal of the secondary winding 2b, and the second winding terminal 12 is the negative terminal of the secondary winding 2b. The cathode terminal 17a is connected to the first winding terminal 20 of the reactor winding 4a of the smoothing reactor 4. The connections between the anode terminal 16 and the first winding terminal 11, the anode terminal 18 and the second winding terminal 12, and the cathode terminal 17a and the first winding terminal 20 are, for example, made by welding.

[0035] In Figure 4, the number of bonding wires connecting each part is 1, 3, or 5. The number of bonding wires is not limited to those shown in Figure 4; more wires may be used to connect each part. Furthermore, the connections are not limited to wire bonding; busbars may also be used.

[0036] Module 22, as shown in Figure 5, has a cooling plate 40 and insulating paper 41. The cooling plate 40 is made of a metal material with excellent thermal conductivity, such as copper or aluminum. The lead frames 17, 38a, 38b, 38c, 38d, 39, anode terminals 16, 18, and control lead terminals 36a-36d, 37a-37d are insulated from the cooling plate 40 via the insulating paper 41 and are placed on the other side of the cooling plate 40. The lead frames 17, 38a, 38b, 38c, 38d, 39, anode terminals 16, 18, control lead terminals 36a-36d, 37a-37d, cooling plate 40, and insulating paper 41 are sealed and integrated by a resin member 19, with the terminal portions connected to the outside of module 22 and one side of the cooling plate 40 exposed. The terminals connected to the outside of module 22 are the ends of the lead terminals 13 and 14, anode terminals 16 and 18, power terminal 43, and control lead terminals 36a to 36d and 37a to 37d, and are hereinafter referred to as module terminals. In this embodiment, the module terminals are exposed from the resin member 19, extend in a direction parallel to the surface of the cooling plate 40, and then bent to extend in the direction in which the substrate 200 is arranged. The configuration of the module terminals is not limited to this, and the module terminals may be extended in the direction of the substrate 200 without having a bent portion.

[0037] <Electrical connection configuration of power converter 1000> The electrical connection configuration of the power converter 1000 shown in Figures 2 and 3 will be explained below. One of the input terminals 42 provided on the circuit board 200 corresponds to part P shown in Figure 1. The other of the input terminals 42 corresponds to part N shown in Figure 1. One of the power terminal connection parts 42a provided on the circuit board 200 is connected to the power terminals 43 on the lead frame 38a and the power terminals 43 on the lead frame 38c. The other of the power terminal connection part 42a is connected to the power terminal 43 on the lead frame 39. The gate driver 5, gate resistor 6, pulse transformer 7, gate resistors 8a, 8b, 8c, 8d, and control unit 100 shown in Figure 1 are provided on the control component 15.

[0038] The current input from the power supply (not shown) to the input terminal 42 is input to the module 22 via the conductive pattern 44, the power supply terminal connection part 42a, and the power supply terminal 43. When semiconductor switching elements 1a and 1d are ON, the current input to module 22 passes through semiconductor switching element 1a and lead terminal 13 and is input to the primary winding 2a from the first winding terminal 9. The current then passes through the second winding terminal 10, lead terminal 14, and semiconductor switching element 1d and is output from module 22. The current output from the power supply terminal 43 of module 22 goes to the power supply via the power supply terminal connection part 42a, the conductive pattern 44, and the input terminal 42.

[0039] The voltage applied between the first winding terminal 9 and the second winding terminal 10 is transmitted from the primary winding 2a to the secondary winding 2b and output from between the first winding terminal 11 and the second winding terminal 12. The outputs from the first winding terminal 11 and the second winding terminal 12 are input to diodes 3a and 3b, respectively, via the anode terminal 16 of diode 3a and the anode terminal 18 of diode 3b. The power output via the cathode terminals 17a of diodes 3a and 3b is input to the smoothing reactor 4 via the first winding terminal 20 of the smoothing reactor 4. After being smoothed in the smoothing reactor 4, the power is output via the output terminal 23 connected to the load, passing through the second winding terminal 21 of the smoothing reactor 4.

[0040] If L is the inductance of the control lead terminal 46 connected to the control component 15, dt is the unit time, and di is the current flowing per unit time, then the surge voltage V at the control lead terminal 46 can be calculated by equation (1). V = L × (di / dt) ... (1) The surge voltage V depends on the inductance L of the control lead terminal 46, and the surge of the control lead terminal 46 increases as the inductance L increases. As the surge increases, the fluctuation between the drain and source in the semiconductor switching elements 1a to 1d becomes larger, and consequently, the noise between PN on the input side increases. Therefore, in order to suppress the noise that mainly propagates to the power supply side, additional noise suppression components such as X capacitors (across-the-line capacitors), Y capacitors (line bypass capacitors), ferrite cores, or choke coils are required between PN. By providing additional noise suppression components, the power converter 1000 becomes larger and more expensive. In order to suppress the increase in the inductance L of the control lead terminal 46, it is desirable to shorten the length of the control lead terminal 46. To achieve this, it is effective to shorten the distance between the substrate 200 and the module 22. By providing through holes, which are the essential part of this invention, in the substrate 200, the distance between the substrate 200 and the module 22 can be shortened. The through holes will be described below.

[0041] <Through-hole in substrate 200> The substrate 200 has through holes. A connection portion is formed by connecting an element terminal connected to a target semiconductor element, which is at least one power semiconductor element, to a winding terminal provided at the end of a target winding, which is a winding connected to the target semiconductor element. The connection portion extends toward the through hole and passes through the through hole. With this configuration, the distance between the power semiconductor element and magnetic component and the substrate 200 can be shortened without the substrate 200 and the connection portion coming into contact, thus reducing wasted space and enabling miniaturization of the power converter 1000. In addition, since the distance between the drive circuit on the substrate 200 and the power semiconductor element can be shortened, an extension member to extend the control lead terminal 46 connecting the drive circuit and the power semiconductor element is unnecessary, and the control lead terminal 46 can be shortened. Because the control lead terminal 46 is shortened, noise caused by the inductance of the control lead terminal 46 is suppressed, and no additional noise suppression components are needed, so the power converter 1000 can be miniaturized and its cost reduced.

[0042] Details of the through-holes and connection parts will be explained. In this embodiment, the substrate 200 has five through-holes. First, the first through-hole 52 and the second through-hole 53 and the connection parts that pass through them will be explained. One of the target windings is the primary winding 2a. One of the target semiconductor elements is a power semiconductor element that constitutes a power conversion circuit. In this embodiment, one of the target semiconductor elements is the first set of power semiconductor elements, and the other of the target semiconductor elements is the second set of power semiconductor elements. The connection part is the part where the element terminal connected to the power semiconductor element, which is the target semiconductor element, is connected to the winding terminal of the primary winding. In this embodiment, the lead terminal 13, which is the first element terminal connected to the first set of power semiconductor elements, is connected to the first winding terminal 9 of the primary winding 2a to form the first connection part 47. The lead terminal 14, which is the second element terminal connected to the second set of power semiconductor elements, is connected to the second winding terminal 10 of the primary winding 2a to form the second connection part 48. The substrate 200 has a first through-hole 52 and a second through-hole 53. The first connecting portion 47 extends toward the first through-hole 52 and passes through the first through-hole 52. The second connecting portion 48 extends toward the second through-hole 53 and passes through the second through-hole 53. In this embodiment, all through-holes are provided in a rectangular shape, but the shape of the through-holes is not limited to rectangles; for example, they may be circular.

[0043] The isolation transformer 2 is often taller than the module 22. Therefore, the first connection portion 47 and the second connection portion 48 tend to be located away from the cooling surface 300a. If a distance is maintained between the substrate 200 and the first connection portion 47 and the second connection portion 48 to avoid contact between the substrate 200 and the first connection portion 47 and the second connection portion 48, the control lead terminals 46 become longer. By providing the first through hole 52 and the second through hole in this way, contact between the substrate 200 and the first connection portion 47 and the second connection portion 48 is avoided, the distance between the substrate 200 and the isolation transformer 2 and module 22 is shortened, wasted space is reduced, and the length of the control lead terminals 46 can be shortened.

[0044] Next, the first through-hole 54 for rectification, the second through-hole 55 for rectification, and the connection portion that penetrates them will be described. One of the target windings is the secondary winding 2b. One of the target semiconductor elements is a rectifying power semiconductor element that constitutes a rectifier circuit. In this embodiment, one of the target semiconductor elements is the first rectifying power semiconductor element, and the other target semiconductor element is the second rectifying power semiconductor element. The connection portion is the part where the element terminal connected to the rectifying power semiconductor element, which is the target semiconductor element, and the winding terminal of the secondary winding are connected. In this embodiment, the anode terminal 16, which is the first rectifying element terminal connected to the first rectifying power semiconductor element, and the first winding terminal 11 of the secondary winding 2b are connected to form the first rectifying connection portion 49. The anode terminal 18, which is the terminal of the second rectifier element connected to the second rectifier power semiconductor element, is connected to the second winding terminal 12 of the secondary winding 2b, forming a second rectifier connection portion 50. The substrate 200 has through holes, namely a first rectifier through hole 54 and a second rectifier through hole 55. The first rectifier connection portion 49 extends toward the first rectifier through hole 54 and passes through the first rectifier through hole 54. The second rectifier connection portion 50 extends toward the second rectifier through hole 55 and passes through the second rectifier through hole 55.

[0045] Next, the through-hole 56 for the reactor and the connection portion that penetrates the through-hole 56 for the reactor will be described. One of the target windings is the reactor winding 4a. One of the target semiconductor elements is a rectifier power semiconductor element. In this embodiment, one of the target semiconductor elements is a first rectifier power semiconductor element, and the other target semiconductor element is a second rectifier power semiconductor element. The connection portion is the part where the element terminal for the reactor, which is connected to the rectifier power semiconductor element (which is the target semiconductor element), is connected to the winding terminal of the reactor winding. In this embodiment, the cathode terminal 17a, which is an element terminal connected to the first rectifier power semiconductor element and the second rectifier power semiconductor element, is connected to the first winding terminal 20 of the reactor winding 4a, forming the reactor connection portion 51. The substrate 200 has a through-hole 56 for the reactor. The reactor connection portion 51 extends toward the reactor through hole 56 and passes through the reactor through hole 56.

[0046] By providing a first through-hole 54 for rectification, a second through-hole 55 for rectification, and a through-hole 56 for the reactor, along with a first rectification connection part 49, a second rectification connection part 50, and a reactor connection part 51 that pass through them, contact between the substrate 200 and the first rectification connection part 49, the second rectification connection part 50, and the reactor connection part 51 can be avoided. Furthermore, the module 22, isolation transformer 2, and smoothing reactor 4 can be arranged without worrying about the placement of the first rectification connection part 49, the second rectification connection part 50, and the reactor connection part 51, thereby increasing the degree of freedom in the component mounting layout of the module 22, isolation transformer 2, and smoothing reactor 4. Furthermore, the degree of freedom in the layout of the terminals of these mounted components, namely the first winding terminal 9, the second winding terminal 10, the first winding terminal 11, the second winding terminal 12, the lead terminals 13, 14, the anode terminals 16, 18, the cathode terminal 17a, and the first winding terminal 20, can be increased.

[0047] If the power semiconductor elements constituting the rectifier circuit 3 are semiconductor switching elements with gate terminals instead of diodes 3a and 3b, the rectifier circuit 3 will also have a configuration with control lead terminals. By providing a first rectifier through-hole 54 and a second rectifier through-hole 55, and a first rectifier connection part 49 and a second rectifier connection part 50 passing through them, the length of the control lead terminals of the rectifier circuit 3 can also be shortened. Since the length of the control lead terminals of the rectifier circuit 3 can be shortened, noise generated on the secondary side of the isolation transformer 2 is also suppressed, and no additional noise suppression components are required, so the power converter 1000 can be made smaller and less expensive.

[0048] In this embodiment, as shown in Figure 3, the element terminals and winding terminals extend along the cooling surface 300a so as to approach each other, and after coming into contact with each other, they are bent and extend in the direction in which the substrate 200 is positioned. The parts of the element terminals and winding terminals that come into contact are joined by welding to form a connection. With this configuration, since the orientation of the connection is the same, there is no need to change the orientation of the welding electrodes when welding the element terminals and winding terminals, so that multiple locations can be welded efficiently. Because multiple locations can be welded efficiently, the number of manufacturing steps is reduced, the productivity of the power converter 1000 can be improved, and the cost of the power converter 1000 can be reduced.

[0049] In this embodiment, as shown in Figure 4, the power conversion circuit 1 is sealed in the same package. By modularizing the power conversion circuit 1 in this way, the distance between each component can be reduced while ensuring insulation between each component. Because the distance between each component is reduced, the wiring in full bridge configuration, especially the bonding wires 29a-29d, 30a-30d, and 31a-31d, can be minimized. Since the wiring is minimized by modularization, noise caused by wiring length can be suppressed. Because noise caused by wiring length is suppressed and additional noise suppression components are not required, the power conversion device 1000 can be made smaller and less expensive. Furthermore, the rectifier circuit 3 is sealed in the same package. By modularizing the rectifier circuit 3 in this way, the distance between each component can be reduced while ensuring insulation between each component, thus the power conversion device 1000 can be made smaller and less expensive.

[0050] In this embodiment, the power conversion circuit 1 and the rectifier circuit 3 are sealed in the same package. By modularizing the power conversion circuit 1 and the rectifier circuit 3, the first rectifier connection part 49 and the second rectifier connection part 50 are arranged adjacent to the first connection part 47 and the second connection part 48. Even though these four connection parts are arranged adjacent to each other, each of these connection parts passes through a through hole in the substrate 200, so the substrate 200 and the connection part do not come into contact, and the distance between the power semiconductor element and magnetic component and the substrate 200 can be shortened, thus reducing wasted space and enabling miniaturization of the power conversion device 1000. In addition, because the rectifier circuit 3 is modularized, the bonding wires 32a and 32b can be shortened to the shortest possible length.

[0051] Furthermore, since the distance between the drive circuit on the substrate 200 and the power semiconductor element can be shortened, extension members for extending the control lead terminals 46 adjacent to the first rectification connection 49 and the second rectification connection 50 are unnecessary, and the control lead terminals 46 can be shortened. As the control lead terminals 46 are shortened, noise caused by the inductance of the control lead terminals 46 is suppressed, and additional noise suppression components are unnecessary, so the power converter 1000 can be made smaller and less expensive. In addition, by integrating the power conversion circuit 1 and the rectification circuit 3, the power conversion circuit 1 and the rectification circuit 3 can be made smaller, so the power converter 1000 can be made smaller.

[0052] In this embodiment, as shown in Figure 3, the substrate 200 has a control line 28 on one side of the substrate 200 that connects the substrate 200 to an external device. The control line 28 is connected to a drive circuit. The portion of the control line 28 opposite to the side connected to the drive circuit is connected to a connector (not shown) provided on the lower side of Figure 3, or to another power conversion device (not shown). The control line 28 transmits control signals necessary for driving the semiconductor switching elements 1a, 1b, 1c, and 1d.

[0053] If the through-holes in the substrate 200 are not penetrated by the connection points, the length of the control line 28 that transmits the control signal becomes longer, making the control signal more susceptible to noise, which can lead to malfunction of the power conversion circuit 1. In the configuration of the present invention, since the connection points penetrate the through-holes, the distance between the power semiconductor element and magnetic component and the substrate 200 can be shortened, and the length of the control line 28 can be shortened. Since the length of the control line 28 is shortened, the control signal becomes less susceptible to noise. Since the control signal becomes less susceptible to noise, noise suppression components are unnecessary, and the power conversion device 1000 can be made smaller and less expensive.

[0054] In this embodiment, as shown in Figure 6, the number of turns of the secondary winding 2b of the isolation transformer 2 is less than the number of turns of the primary winding 2a of the isolation transformer 2. Figure 6 is a schematic diagram showing the primary winding 2a and secondary winding 2b of the power converter 1000 according to Embodiment 1. The amount of current on the secondary side of the isolation transformer 2 is calculated by (input voltage × input current) / output voltage. The larger the difference between (input voltage × input current) and the output voltage, the larger the amount of current on the secondary side, i.e., the output current of the isolation transformer 2. When a large current flows on the output side of the isolation transformer 2, it is necessary to use thick wiring. Since there is a limit to the pattern thickness that can be provided on the circuit board, busbars are used for wiring that carries large currents. When the width and thickness of the busbar are increased as the amount of current increases, it is necessary to increase the volume of the busbar while ensuring clearance between the busbar and the components provided around it, which results in a larger and more expensive power converter. In the configuration of this invention, even if the number of turns of the secondary winding 2b is less than the number of turns of the primary winding 2a, the control lead terminal 46 becomes shorter, so noise caused by the inductance of the control lead terminal 46 is suppressed, and no additional noise suppression components are required, making it possible to miniaturize and reduce the cost of the power converter 1000.

[0055] In this embodiment, as shown in Figure 2, the substrate 200 is connected to the smoothing reactor 4 and has a smoothing capacitor 24 that smooths the output of the smoothing reactor 4. One end of the smoothing capacitor 24 is connected to the second winding terminal 21 of the smoothing reactor 4 via a pattern 25 provided on the substrate 200. The second winding terminal 21 is connected to the output terminal 23 which is connected to the load. The other end of the smoothing capacitor 24 is connected to a cooler 300 which has a potential of GND via a pattern 26 and a screw 27 provided on the substrate 200.

[0056] The smoothing capacitor 24 needs to be placed adjacent to the smoothing reactor 4. If the smoothing capacitor 24 is provided on the substrate 200, the substrate 200 needs to be placed adjacent to the smoothing reactor 4. In the configuration of the present invention, the distance between the smoothing reactor 4 and the substrate 200 can be shortened without the substrate 200 and the connection part coming into contact, so the smoothing capacitor 24 can be placed adjacent to the smoothing reactor 4. Since the smoothing capacitor 24 can be placed adjacent to the smoothing reactor 4, the smoothing capacitor 24 can efficiently smooth the output of the smoothing reactor 4. In addition, by providing the smoothing capacitor 24 on the substrate 200, the power conversion device 1000 can be miniaturized.

[0057] The through-hole is provided in the second region 45a. By providing the through-hole in the second region 45a, the conductive pattern 44, which generates high voltage, does not interfere with the through-hole. If the through-hole were provided in the first region 45, the conductive pattern 44 would need to bypass the through-hole, and an insulating distance would need to be provided between the conductive pattern 44 and the connection point. As a result, the conductive pattern 44 would be extended, which would increase surges and consequently increase noise, thus requiring noise suppression components in the power converter 1000.

[0058] In this embodiment, as shown in Figure 2, the second region 45a is larger than the first region 45 which includes the conductive pattern 44. In the configuration of this application, since the second region 45a is larger than the first region 45, there is a high degree of freedom in arranging the through holes in the second region 45a. Therefore, the through holes can be arranged in the second region 45a so that the conductive pattern 44 is wired in the shortest possible way. By providing through holes in the second region 45a, the increase in surge and noise can be avoided, eliminating the need for noise suppression components, and enabling miniaturization and cost reduction of the power converter 1000.

[0059] As described above, the power converter 1000 according to Embodiment 1 comprises a plurality of power semiconductor elements, a magnetic component having a target winding which is a winding connected to at least one power semiconductor element, and a substrate 200 having a drive circuit for driving at least one power semiconductor element. The substrate 200 has through holes, and the plurality of power semiconductor elements and magnetic components are arranged on one side of the substrate. An element terminal connected to the target semiconductor element and a winding terminal provided at the end of the target winding are connected to form a connection portion. Since the connection portion extends toward and penetrates the through holes, the substrate 200 and the connection portion do not come into contact, and the distance between the power semiconductor elements and magnetic components and the substrate 200 can be shortened, thus reducing wasted space and allowing the power converter 1000 to be miniaturized. Furthermore, since the distance between the drive circuit on the substrate 200 and the power semiconductor elements can be shortened, an extension member to extend the control lead terminal 46 connecting the drive circuit and the power semiconductor elements is unnecessary, and the control lead terminal 46 can be shortened. Since the control lead terminal 46 is shortened, noise caused by the inductance of the control lead terminal 46 is suppressed, and no additional noise suppression components are required, making it possible to miniaturize and reduce the cost of the power converter 1000.

[0060] If an isolation transformer 2 is provided as a magnetic component, and lead terminals 13 connected to the first set of power semiconductor elements are connected to the first winding terminal 9 of the primary winding 2a to form a first connection portion 47, and lead terminals 14 connected to the second set of power semiconductor elements are connected to the second winding terminal 10 of the primary winding 2a to form a second connection portion 48, and the first connection portion 47 extends toward and passes through the first through hole 52, and the second connection portion 48 extends toward and passes through the second through hole 53, then contact between the substrate 200 and the first connection portion 47 and the second connection portion 48 is avoided, the distance between the substrate 200 and the isolation transformer 2 and module 22 is shortened, wasted space is reduced, and the length of the control lead terminal 46 can be shortened.

[0061] The anode terminal 16 connected to the first rectifier power semiconductor element is connected to the first winding terminal 11 of the secondary winding 2b to form the first rectifier connection portion 49, and the anode terminal 18 connected to the second rectifier power semiconductor element is connected to the second winding terminal 12 of the secondary winding 2b to form the second rectifier connection portion 50, the first rectifier connection portion 49 extends toward the first rectifier through hole 54, passes through the first rectifier through hole 54, and the second rectifier If the connector 50 extends toward the second rectifier through-hole 55 and passes through the second rectifier through-hole 55, in addition to avoiding contact between the substrate 200 and the first rectifier connector 49 and the second rectifier connector 50, the module 22 and isolation transformer 2 can be positioned without worrying about the arrangement of the first rectifier connector 49 and the second rectifier connector 50, thereby increasing the degree of freedom in the component mounting layout of the module 22 and isolation transformer 2. Furthermore, the degree of freedom of the terminals on these mounted components, namely the first winding terminal 9, the second winding terminal 10, the first winding terminal 11, the second winding terminal 12, the lead terminals 13, 14, and the anode terminals 16, 18, can be increased.

[0062] A smoothing reactor 4 having a reactor winding 4a is provided as a magnetic component, and the cathode terminal 17a connected to the first rectifying power semiconductor element and the second rectifying power semiconductor element is connected to the first winding terminal 20 of the reactor winding 4a to form a reactor connection portion 51, and the reactor connection portion 51 extends toward the reactor through hole 56 and penetrates the reactor through hole 56. In addition to avoiding contact between the substrate 200 and the reactor connection portion 51, the module 22, isolation transformer 2, and smoothing reactor 4 can be arranged without worrying about the placement of the reactor connection portion 51, thereby increasing the degree of freedom in the component mounting layout of the module 22, isolation transformer 2, and smoothing reactor 4. Furthermore, the degree of freedom in the layout of the terminals of these mounted components, namely the first winding terminal 9, the second winding terminal 10, the first winding terminal 11, the second winding terminal 12, the lead terminals 13, 14, the anode terminals 16, 18, the cathode terminal 17a, and the first winding terminal 20, can be increased.

[0063] When the element terminals and winding terminals extend along the cooling surface 300a so as to approach each other, come into contact with each other, are then bent and extend in the direction in which the substrate 200 is positioned, and the parts of the element terminals and winding terminals that have come into contact are joined by welding to form a connection, the orientation of the connection is the same. Therefore, when welding the element terminals and winding terminals, there is no need to change the orientation of the welding electrodes, and multiple locations can be welded efficiently. Because multiple locations can be welded efficiently, the number of manufacturing steps is reduced, the productivity of the power converter 1000 can be improved, and the cost of the power converter 1000 can be reduced.

[0064] When the power conversion circuit 1 is sealed in the same package, the distance between each component is reduced while ensuring insulation between each component, and the wiring of bonding wires 29a-29d, 30a-30d, and 31a-31d is minimized, thus suppressing noise caused by wiring length. Also, when the rectifier circuit 3 is sealed in the same package, the distance between each component can be reduced while ensuring insulation between each component, so the power conversion device 1000 can be made smaller and less expensive.

[0065] When the power conversion circuit 1 and the rectifier circuit 3 are sealed in the same package, modularizing the power conversion circuit 1 and the rectifier circuit 3 allows the first rectification connection part 49, the second rectification connection part 50, the first connection part 47, and the second connection part 48 to be arranged adjacent to each other. Since each of these connection parts passes through a through-hole, the connection parts do not come into contact with the substrate 200, thus shortening the distance between the power semiconductor elements and magnetic components and the substrate 200. This reduces wasted space and allows the power conversion device 1000 to be miniaturized.

[0066] If the substrate 200 has a control line 28 on one side of the substrate 200 that connects the substrate 200 to an external device, and the control line 28 is connected to a drive circuit, the connection part passes through a through hole, so the distance between the power semiconductor element and magnetic component and the substrate 200 can be shortened, and the length of the control line 28 is shortened, so the control signal becomes less susceptible to noise. Since the control signal becomes less susceptible to noise, noise suppression components are unnecessary, so the power conversion device 1000 can be made smaller and less expensive.

[0067] If the number of turns of the secondary winding 2b of the isolation transformer 2 is less than the number of turns of the primary winding 2a of the isolation transformer 2, the output current of the isolation transformer 2 will increase. However, in the configuration of the present invention, the control lead terminal 46 is shortened, so noise caused by the inductance of the control lead terminal 46 is suppressed, and no additional noise suppression components are required, making it possible to miniaturize and reduce the cost of the power converter 1000.

[0068] In the present invention, when the substrate 200 is connected to the smoothing reactor 4 and has a smoothing capacitor 24 that smooths the output of the smoothing reactor 4, the distance between the smoothing reactor 4 and the substrate 200 can be shortened without the substrate 200 and the connection part coming into contact, so that the smoothing capacitor 24 can be placed adjacent to the smoothing reactor 4. Since the smoothing capacitor 24 can be placed adjacent to the smoothing reactor 4, the smoothing capacitor 24 can efficiently smooth the output of the smoothing reactor 4.

[0069] When the through-hole is provided in the second region 45a, interference between the high-voltage conductive pattern 44 and the through-hole can be suppressed. When the through-hole is provided in the first region 45, the conductive pattern 44 needs to bypass the through-hole, and an insulating distance must be provided between the conductive pattern 44 and the connection. As a result, the conductive pattern 44 is extended, which increases surges and consequently increases noise, requiring noise suppression components in the power converter 1000. However, by providing the through-hole in the second region 45a, noise suppression components become unnecessary, allowing the power converter 1000 to be miniaturized and reduced in cost.

[0070] Furthermore, although this application describes various exemplary embodiments and examples, the various features, aspects, and functions described in one or more embodiments are not limited to the application of a particular embodiment, but can be applied individually or in various combinations to the embodiments. Accordingly, countless variations not illustrated are conceivable within the scope of the technology disclosed herein. These include, for example, modifying, adding or omitting at least one component, or even extracting at least one component and combining it with components of other embodiments.

[0071] The various aspects of this disclosure are summarized below as an appendix. (Note 1) Multiple power semiconductor elements, A magnetic component having a target winding which is a winding connected to at least one of the target semiconductor elements which is a power semiconductor element, A substrate having a drive circuit for driving at least one of the power semiconductor elements, The substrate has through holes, Multiple power semiconductor elements and magnetic components are arranged on one side of the substrate. A connection portion is formed when the element terminal connected to the target semiconductor element and the winding terminal provided at the end of the target winding are connected. The aforementioned connection portion is a power conversion device that extends toward the through hole and penetrates the through hole. (Note 2) The aforementioned magnetic component is an isolation transformer having a primary winding and a secondary winding. The plurality of power semiconductor elements are provided, which constitute a power conversion circuit that converts the power supplied to the primary winding. One of the target windings is the primary winding, One of the target semiconductor elements is the power semiconductor element that constitutes the power conversion circuit, The power conversion device as described in Appendix 1, wherein the connection portion is the portion where the element terminal connected to the power semiconductor element, which is the target semiconductor element, is connected to the winding terminal of the primary winding. (Note 3) The aforementioned magnetic component is an isolation transformer having a primary winding and a secondary winding. The plurality of power semiconductor elements are provided, which constitute a rectifier circuit for rectifying the power output from the secondary winding. One of the target windings is the secondary winding, One of the target semiconductor elements is a rectifier power semiconductor element that constitutes the rectifier circuit, The power conversion device according to Appendix 1 or 2, wherein the connection portion is the portion where the element terminal connected to the rectifying power semiconductor element, which is the target semiconductor element, is connected to the winding terminal of the secondary winding. (Note 4) The aforementioned magnetic component is an isolation transformer having a primary winding and a secondary winding. The plurality of power semiconductor elements are provided, which constitute a rectifier circuit for rectifying the power output from the secondary winding. As the magnetic component, a smoothing reactor is provided, which has a reactor winding that smooths the output of the rectifier circuit. One of the target windings is the reactor winding, One of the target semiconductor elements is a rectifier power semiconductor element that constitutes the rectifier circuit, The power conversion device according to any one of the appendices 1 to 3, wherein the connection portion is the portion where the element terminal for the reactor connected to the rectifying power semiconductor element, which is the target semiconductor element, is connected to the winding terminal of the reactor winding. (Note 5) Equipped with a cooler having a cooling surface, The multiple power semiconductor elements and the magnetic component are arranged side by side on the cooling surface. The board surface of the substrate and the cooling surface are parallel. The element terminals and winding terminals extend along the cooling surface so as to approach each other, and after coming into contact with each other, they are bent and extend in the direction in which the substrate is positioned. The parts of the element terminal and the winding terminal that come into contact are joined by welding to form the connection portion. The substrate is a power conversion device according to any one of the appendices 1 to 4, fixed to the cooler. (Note 6) The aforementioned power conversion circuit is the power conversion device described in Appendix 2, which is sealed in the same package. (Note 7) The rectifier circuit is a power conversion device as described in Appendix 3 or 4, which is sealed in the same package. (Note 8) The plurality of power semiconductor elements are provided, which constitute a rectifier circuit for rectifying the power output from the secondary winding. The power conversion device described in Appendix 2, wherein the power conversion circuit and the rectifier circuit are sealed in the same package. (Note 9) The plurality of power semiconductor elements are provided, which constitute a power conversion circuit that converts the power supplied to the primary winding. The power conversion device described in Appendix 3 or 4, wherein the power conversion circuit and the rectifier circuit are sealed in the same package. (Note 10) The substrate has a control line on one side of the substrate that connects the substrate to an external device. The control line is connected to the drive circuit and is a power converter according to any one of the items 1 to 9. (Note 11) The aforementioned magnetic component is an isolation transformer having a primary winding and a secondary winding. The power conversion device according to any one of the appendices 1 to 10, wherein the number of turns of the secondary winding of the isolation transformer is less than the number of turns of the primary winding of the isolation transformer. (Note 12) The power conversion device according to Appendix 4, wherein the substrate is connected to the smoothing reactor and has a smoothing capacitor that smooths the output of the smoothing reactor. (Note 13) The plurality of power semiconductor elements are provided, which constitute a power conversion circuit that converts the power supplied to the primary winding. A power supply terminal is provided that is connected to the power semiconductor element constituting the power conversion circuit. The circuit board has a power terminal connection section to which the power terminals are connected, and an input terminal section connected to an externally provided power supply. The power terminal connection section and the input terminal section are connected by a conductive pattern provided on the circuit board. The substrate has a first region including the conductive pattern and a second region which is an area insulated from the first region. The through-hole is provided in the second region and is a power conversion device according to any one of the appendices 2 to 4, or appendice 6 or 8. [Explanation of symbols]

[0072] 1 Power conversion circuit, 1a, 1b, 1c, 1d Semiconductor switching elements, 2 Isolation transformer, 2a Primary winding, 2b Secondary winding, 3 Rectifier circuit, 3a, 3b Diodes, 4 Smoothing reactor, 4a Reactor winding, 5 Gate driver, 6 Gate resistor, 7 Pulse transformer, 8a, 8b, 8c, 8d Gate resistors, 9 First winding terminal, 10 Second winding terminal, 11 First winding terminal, 12 Second winding terminal, 13 Lead terminal, 14 Lead terminal, 15 Control component, 16 Anode terminal, 17 Lead frame, 17a Cathode terminal, 18 Anode terminal, 19 Resin component, 20 First winding terminal, 21 Second winding terminal, 22 Module, 23 Output terminal, 24 Smoothing capacitor, 25 Pattern, 26 Pattern, 27 Screw, 28 Control wires, 29a-29d, 30a-30d, 31a-31d, 32a, 32b Bonding wires, 33a-33d Gate pads, 34a-34d Source pads, 35a, 35b Anode pads, 36a-36d, 37a-37d Control lead terminals, 38a, 38b, 38c, 38d, 39 Lead frame, 40 Cooling plate, 41 Insulating paper, 42 Input terminal section, 42a Power terminal connection section, 43 Power terminal, 44 Conductive pattern, 45 First region, 45a Second region, 46 Control lead terminals, 47 First connection section, 48 Second connection section, 49 First rectifier connection section, 50 Second rectifier connection section, 51 Reactor connection section, 52 First through hole, 53 Second through hole, 54 First rectifier through hole, 55 Second through-hole for rectification, 56 through-hole for reactor, 100 control unit, 200 substrate, 300 cooler, 300a cooling surface, 1000 power converter

Claims

1. Multiple power semiconductor elements, A magnetic component having a target winding which is a winding connected to at least one of the target semiconductor elements which is a power semiconductor element, A substrate having a drive circuit for driving at least one of the power semiconductor elements, The substrate has through holes, Multiple power semiconductor elements and magnetic components are arranged on one side of the substrate. A connection portion is formed when the element terminal connected to the target semiconductor element and the winding terminal provided at the end of the target winding are connected. The connecting portion extends toward the through hole and penetrates the through hole, The aforementioned magnetic component is an isolation transformer having a primary winding and a secondary winding. The plurality of power semiconductor elements are provided, which constitute a power conversion circuit that converts the power supplied to the primary winding. One of the target windings is the primary winding, One of the target semiconductor elements is the power semiconductor element that constitutes the power conversion circuit, The aforementioned connection portion is the part where the element terminal connected to the power semiconductor element, which is the target semiconductor element, is connected to the winding terminal of the primary winding. The plurality of power semiconductor elements are provided, which constitute a power conversion circuit that converts the power supplied to the primary winding. A power supply terminal is provided that is connected to the power semiconductor element constituting the power conversion circuit. The circuit board has a power terminal connection section to which the power terminals are connected, and an input terminal section connected to an externally provided power supply. The power terminal connection section and the input terminal section are connected by a conductive pattern provided on the circuit board. The substrate has a first region including the conductive pattern and a second region which is an area insulated from the first region. The through-hole is a power conversion device provided in the second region.

2. A plurality of power semiconductor elements, A magnetic component having a target winding which is a winding connected to at least one of the target semiconductor elements which is a power semiconductor element, A substrate having a drive circuit for driving at least one of the power semiconductor elements, The substrate has through holes, Multiple power semiconductor elements and magnetic components are arranged on one side of the substrate. A connection portion is formed when the element terminal connected to the target semiconductor element and the winding terminal provided at the end of the target winding are connected. The connecting portion extends toward the through hole and penetrates the through hole, The aforementioned magnetic component is an isolation transformer having a primary winding and a secondary winding. The plurality of power semiconductor elements are provided, which constitute a rectifier circuit for rectifying the power output from the secondary winding. One of the target windings is the secondary winding, One of the target semiconductor elements is a rectifier power semiconductor element that constitutes the rectifier circuit, The aforementioned connection portion is the part where the element terminal connected to the rectifying power semiconductor element, which is the target semiconductor element, is connected to the winding terminal of the secondary winding. The plurality of power semiconductor elements are provided, which constitute a power conversion circuit that converts the power supplied to the primary winding. A power supply terminal is provided that is connected to the power semiconductor element constituting the power conversion circuit. The circuit board has a power terminal connection section to which the power terminals are connected, and an input terminal section connected to an externally provided power supply. The power terminal connection section and the input terminal section are connected by a conductive pattern provided on the circuit board. The substrate has a first region including the conductive pattern and a second region which is an area insulated from the first region. The through-hole is a power conversion device provided in the second region.

3. A plurality of power semiconductor elements, A magnetic component having a target winding which is a winding connected to at least one of the target semiconductor elements which is a power semiconductor element, A substrate having a drive circuit for driving at least one of the power semiconductor elements, The substrate has through holes, Multiple power semiconductor elements and magnetic components are arranged on one side of the substrate. A connection portion is formed when the element terminal connected to the target semiconductor element and the winding terminal provided at the end of the target winding are connected. The connecting portion extends toward the through hole and penetrates the through hole, The aforementioned magnetic component is an isolation transformer having a primary winding and a secondary winding. The plurality of power semiconductor elements are provided, which constitute a rectifier circuit for rectifying the power output from the secondary winding. As the magnetic component, a smoothing reactor is provided, which has a reactor winding that smooths the output of the rectifier circuit. One of the target windings is the reactor winding, One of the target semiconductor elements is a rectifier power semiconductor element that constitutes the rectifier circuit, The aforementioned connection portion is the part where the element terminal for the reactor connected to the rectifying power semiconductor element, which is the target semiconductor element, is connected to the winding terminal of the reactor winding. The plurality of power semiconductor elements are provided, which constitute a power conversion circuit that converts the power supplied to the primary winding. A power supply terminal is provided that is connected to the power semiconductor element constituting the power conversion circuit. The circuit board has a power terminal connection section to which the power terminals are connected, and an input terminal section connected to an externally provided power supply. The power terminal connection section and the input terminal section are connected by a conductive pattern provided on the circuit board. The substrate has a first region including the conductive pattern and a second region which is an area insulated from the first region. The through-hole is a power conversion device provided in the second region.

4. Equipped with a cooler having a cooling surface, The multiple power semiconductor elements and the magnetic component are arranged side by side on the cooling surface. The board surface of the substrate and the cooling surface are parallel. The element terminals and winding terminals extend along the cooling surface so as to approach each other, and after coming into contact with each other, they are bent and extend in the direction in which the substrate is positioned. The parts of the element terminal and the winding terminal that come into contact are joined by welding to form the connection portion. The power conversion device according to any one of claims 1 to 3, wherein the substrate is fixed to the cooler.

5. The power conversion device according to claim 1, wherein the power conversion circuit is sealed in the same package.

6. The power conversion device according to claim 2 or 3, wherein the rectifier circuit is sealed in the same package.

7. The plurality of power semiconductor elements are provided, which constitute a rectifier circuit for rectifying the power output from the secondary winding. The power conversion device according to claim 1, wherein the power conversion circuit and the rectifier circuit are sealed in the same package.

8. The plurality of power semiconductor elements are provided, which constitute a power conversion circuit that converts the power supplied to the primary winding. The power conversion device according to claim 2 or 3, wherein the power conversion circuit and the rectifier circuit are sealed in the same package.

9. The substrate has a control line on one side of the substrate that connects the substrate to an external device. The power conversion device according to any one of claims 1 to 3, wherein the control line is connected to the drive circuit.

10. The aforementioned magnetic component is an isolation transformer having a primary winding and a secondary winding. The power conversion device according to any one of claims 1 to 3, wherein the number of turns of the secondary winding of the isolation transformer is less than the number of turns of the primary winding of the isolation transformer.

11. The power conversion device according to claim 3, wherein the substrate is connected to the smoothing reactor and has a smoothing capacitor that smooths the output of the smoothing reactor.

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