Indication device

Abstract

Provide a highly reliable display device or electronic device. 【Solution means】A display device having a first electrode, a second electrode, a light-emitting layer between the first electrode and the second electrode, and a protective film on the second electrode, wherein the protective film has a first insulating film and a second insulating film on the first insulating film. The first insulating film has one or more of aluminum oxide, hafnium oxide, and zirconium oxide, and the second insulating film has one or more of aluminum oxide, hafnium oxide, and zirconium oxide. The composition of the first insulating film and the second insulating film is different, and the protective film has a water vapor transmission rate of less than 1×10 g / (m ·day). The composition of the first insulating film and the second insulating film is different, and the protective film has a water vapor transmission rate of less than 1×10 g / (m -2 ·day). 2 ·day) is less than.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device, or one aspect of the present invention relates to a method for manufacturing a display device. Regarding the law.

[0002] One aspect of the present invention is not limited to the above-mentioned technical field. For example, one aspect of the present invention is The present invention relates to a product, method, or method of manufacture. Alternatively, the present invention relates to a process, machine, or manufacture. relating to a fact or composition of matter. One aspect of the invention relates to a memory device, a processor, a method for driving them, or a method for manufacturing them. .

[0003] In this specification, a semiconductor device refers to a device that can function by utilizing semiconductor properties. It refers to the whole. Therefore, semiconductor elements such as transistors and diodes, and semiconductor circuits are semiconductors. It is a device. Also, a display device, light-emitting device, illumination device, electro-optical device, and electronic device. These may include semiconductor elements and semiconductor circuits. Therefore, display devices, light-emitting devices, lighting devices Electronic devices, electro-optical devices, and electronic equipment may also contain semiconductor devices. [Background technology]

[0004] In recent years, research and development of liquid crystal elements has been actively pursued as display elements used in the display area of ​​display devices. It is also known as electroluminescence. Research and development of light-emitting elements using EL (electroluminescent) is also actively underway. Basic configuration of a light-emitting element. This device consists of a layer containing a light-emitting material sandwiched between a pair of electrodes. A voltage is applied to this light-emitting element. By adding this, light emission can be obtained from the luminescent material.

[0005] In particular, since the above-described light-emitting element is a self-emitting type, a display device using this element has advantages such as excellent visibility. It does not require a backlight and has advantages such as low power consumption. Furthermore, it can be manufactured to be thin and lightweight and also has an advantage of high response speed.

[0006] In addition, as a display device having the above-described display element, since flexibility can be achieved, the adoption of a flexible substrate is being considered.

[0007] As a method for manufacturing a display device using a flexible substrate, after manufacturing a semiconductor element such as a thin film transistor on a substrate such as a glass substrate or a quartz substrate, for example, an organic resin is filled between the semiconductor element and the substrate, and the semiconductor element is transferred from the glass substrate or the quartz substrate to another substrate (for example, a flexible substrate). A technique has been developed (Patent Document 1).

[0008] A light-emitting element formed on a flexible substrate may further have a flexible substrate provided thereon in order to protect the surface of the light-emitting element and prevent the intrusion of moisture and impurities from the outside.

[0009] In addition, display devices are expected to be applied to various uses and diversification is required. For example, as portable information terminals, the development of smartphones and tablet terminals equipped with touch sensors is in progress.

Prior Art Documents

Patent Documents

[0010]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0011] Furthermore, light-emitting elements, especially those primarily composed of organic compounds, are particularly susceptible to degradation by water. As a result, a partial decrease in brightness may occur in the display device. Or, in the display device This can result in non-luminescent regions.

[0012] One aspect of the present invention aims to provide a highly reliable display device or electronic device. Alternatively, one aspect of the present invention provides a display device or electronic device that is less prone to damage. One of the challenges is to achieve this. Alternatively, one aspect of the present invention is a thin or lightweight display device. Alternatively, one objective is to provide electronic equipment. Or, one aspect of the present invention is to reduce power consumption. One of the objectives is to provide a display device or electronic device with low power. One embodiment aims to provide a novel display device or electronic device.

[0013] Furthermore, the description of these problems does not preclude the existence of other problems. One approach does not require that all of these issues be resolved. The title will become clear from the description in the specification, drawings, claims, etc. It is possible to extract other issues from the descriptions in the drawings, claims, etc. [Means for solving the problem]

[0014] One aspect of the present invention comprises a first electrode, a second electrode, and between the first electrode and the second electrode. This is a display device having an emissive layer and a protective film on a second electrode. The protective film is a first insulating film. The device has a second insulating film on a first insulating film, and the first insulating film is made of aluminum oxide, oxide The second insulating film comprises one or more hafnium and zirconium oxide, and the second insulating film is aluminum oxide. It has one or more of the following: a first insulating film and a second The insulating film composition differs, and the protective film has a water vapor transmission rate of 1 × 10⁻⁶. -2 g / (m 2 ·day) Not yet It is full.

[0015] Furthermore, one aspect of the present invention includes a first electrode and a third insulating film that overlaps with the end of the first electrode, A first electrode and a third insulating film with an emissive layer, a second electrode on the emissive layer, and on the second electrode A display device having a protective film. The protective film comprises a first insulating film and a second insulating film on the first insulating film. The film has an insulating film, the first insulating film being made of aluminum oxide, hafnium oxide, and dioxide. The second insulating film has one or more aluminum oxides, and the second insulating film has aluminum oxide, hafnium oxide, and The first insulating film has one or more layers of zirconium oxide, and the first insulating film overlaps with the first electrode via the light-emitting layer. It has a first region and a second region that overlaps with a third insulating film via a light-emitting layer, and the second region It has a region with a lower membrane density than the first region.

[0016] Furthermore, one aspect of the present invention includes a first electrode, a second electrode, and the first electrode and the second electrode A light-emitting element having a light-emitting layer between it and is formed, and using the sputtering method, aluminum oxide is formed. A first insulating film having one or more of the following materials: luminescent element The aluminum oxide, hafnium oxide, and zirconium oxide are formed on top of the aluminum oxide using the ALD method. A method for manufacturing a display device, comprising forming a second insulating film having one or more elements of nium on a first insulating film. be.

[0017] The second insulating film may have a higher carbon content than the first insulating film.

[0018] Furthermore, a portion of the second insulating film may be filled with a portion of the first insulating film.

[0019] Furthermore, it may have a colored film in contact with the second insulating film.

[0020] Furthermore, one aspect of the present invention may have a first display element and a second display element. The display element comprises a first electrode, a second electrode, and a light-emitting layer between the first electrode and the second electrode. The light-emitting element has the following properties, and the second display element may be a liquid crystal element. [Effects of the Invention]

[0021] According to one aspect of the present invention, a highly reliable display device or electronic device can be provided. Alternatively, according to one aspect of the present invention, a display device or electronic device that is less susceptible to damage is provided. It is possible to make a thin or lightweight display device according to one aspect of the present invention. Or, electronic devices can be provided. Alternatively, according to one aspect of the invention, low power consumption can be provided. A display device or electronic device can be provided. Alternatively, according to one aspect of the present invention... This allows us to provide novel display devices or electronic devices, etc.

[0022] Furthermore, the description of these effects does not preclude the existence of other effects. One embodiment does not need to have all of these effects. Other effects are described in the specification. This will become clear from the description in the drawings, claims, etc., and the specification, drawings, claims From descriptions such as these, it is possible to extract other effects. [Brief explanation of the drawing]

[0023] [Figure 1]A diagram illustrating a display device according to an embodiment. [Figure 2] A diagram illustrating a display device according to an embodiment. [Figure 3] A diagram illustrating a display device according to an embodiment. [Figure 4] A diagram illustrating a display device according to an embodiment. [Figure 5] A diagram illustrating a display device according to an embodiment. [Figure 6] A diagram illustrating a display device according to an embodiment. [Figure 7] A diagram illustrating a display device according to an embodiment. [Figure 8] A diagram illustrating a display device according to an embodiment. [Figure 9] A diagram illustrating a pixel unit. [Figure 10] A diagram illustrating a pixel unit. [Figure 11] A diagram illustrating the circuitry of a display device and a top view of a pixel. [Figure 12] A diagram illustrating the circuitry of a display device. [Figure 13] A diagram illustrating the circuitry of a display device and a top view of a pixel. [Figure 14] A diagram illustrating the configuration of a display device. [Figure 15] A diagram illustrating the configuration of a display device. [Figure 16] A diagram illustrating the configuration of a display device. [Figure 17] An example of the configuration of a display module according to an embodiment. [Figure 18] An electronic device according to an embodiment. [Figure 19] An electronic device according to an embodiment. [Figure 20] An electronic device according to an embodiment. [Figure 21] A diagram illustrating the transmittance, reflectance, and absorptance of a sample. [Figure 22] A diagram illustrating STEM imagery. [Figure 23] A diagram illustrating the sample preparation process. [Figure 24]A diagram illustrating an optical microscope image of a sample. [Figure 25] A diagram illustrating the luminescence characteristics of the sample. [Figure 26] A diagram illustrating the luminescence characteristics of the sample. [Modes for carrying out the invention]

[0024] Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. Without departing from the spirit and scope of the present invention, its form and details may be modified in various ways. Those skilled in the art will readily understand what is possible. Therefore, the present invention is as shown in the following embodiments. It should not be interpreted as being limited to the contents described herein.

[0025] In the configuration of the invention described below, the same part or part having a similar function is The same reference numerals are used consistently across different drawings, and explanations of their repetition are omitted. When referring to the function of [this], the hatch pattern is the same, and sometimes no specific symbol is assigned.

[0026] In each figure described herein, the size, layer thickness, or area of ​​each component is as follows: It may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale. stomach.

[0027] In this specification, ordinal numbers such as "the first," "the second," etc., are used to avoid confusion of constituent elements. This is added for the purpose of providing a numerical limit, and is not intended to limit the number of items.

[0028] A transistor is a type of semiconductor device that amplifies current and voltage, and controls conduction or non-conductivity. It is possible to realize controlled switching operations, etc. Transistors in this specification are , IGFET(Insulated Gate Field Effect Trans istors and thin-film transistors (TFTs) ) includes.

[0029] In this specification and elsewhere, "metal oxide" refers to a metal in a broad sense. It is an oxide. Metal oxides are oxide insulators and oxide conductors (including transparent oxide conductors). ), oxide semiconductor (also called Oxide Semiconductor or simply OS) They are classified into categories such as the following. For example, when a metal oxide is used in the semiconductor film of a transistor, the gold Metal oxides are sometimes referred to as oxide semiconductors. In other words, metal oxides have amplification and rectification effects. If it has at least one of the functions and switching function, the metal oxide is metal oxide Metal oxide semiconductor, abbreviated as OS. It is possible. Also, when referred to as OS FET, it refers to a metal oxide or oxide. This can be rephrased as a transistor containing a semiconductor.

[0030] Furthermore, in this specification, metal oxides containing nitrogen are also referred to as metal oxides (metal oxides). They are sometimes collectively referred to as metal oxynitrides (metal oxides). Also, metal oxides containing nitrogen are sometimes called metal oxynitrides (metal oxides). It may also be called tal oxynitride.

[0031] Furthermore, in this specification, etc., CAAC (c-axis aligned crystal l) and when referring to CAC (Cloud-Aligned Composite) There is. Note that CAAC represents one example of a crystal structure, and CAC represents one of the functions or components of the material. This illustrates an example.

[0032] Furthermore, in this specification, CAC-OS or CAC-metal oxide is defined as follows: In part of the material, it has conductive properties, and in part of the material, it has insulating properties, and the whole material It has semiconductor properties. Note that CAC-OS or CAC-metal oxi When de is used in the semiconductor film of a transistor, its conductive function is to act as an electron carrier. The function of allowing electrons (or holes) to flow is the function of preventing the flow of electrons, which act as carriers. Therefore, by making the conductive and insulating functions work complementaryly, The switching function (the function to turn it on / off) is controlled by CAC-OS or CAC-meta It can be applied to oxides. CAC-OS or CAC-metal oxide In an IDE, separating each function maximizes the potential of both. It is possible.

[0033] Furthermore, in this specification, CAC-OS or CAC-metal oxide is defined as follows: It has a conductive region and an insulating region. The conductive region has the conductive function described above, and the insulating region... The conductive region has the insulating function described above. Furthermore, within the material, the conductive region and the insulating region These regions may be separated at the nanoparticle level. Furthermore, there are conductive regions and insulating regions. These can be unevenly distributed within the material. Also, the conductive region may appear blurred around the edges. They may sometimes be observed connected in a do-like pattern.

[0034] Furthermore, in CAC-OS or CAC-metal oxide, the conductive region and The insulating region is defined as 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. They may be dispersed in the material in sizes smaller than m.

[0035] Furthermore, CAC-OS or CAC-metal oxide have different band gaps. It is composed of components having [a certain characteristic]. For example, CAC-OS or CAC-metal ox The ide consists of a component with a wide gap due to the insulating region and a component with a wide gap due to the conductive region. It consists of a component having a narrow gap. In this configuration, when the carrier is flowing... In components with a narrow gap, the carrier mainly flows. The component with a gap acts complementaryly with the component with a wide gap, and the component with a narrow gap In conjunction with the components that perform this action, carriers also flow to components with a wide gap. Therefore, the above Using CAC-OS or CAC-metal oxide in the channel region of a transistor If present, the transistor has a high current-driving force in its ON state, i.e., a large ON current, and High field effect mobility can be obtained.

[0036] In other words, CAC-OS or CAC-metal oxide is a matrix composite Material (matrix composite), or metal matrix composite material (metal It can also be called a matrix composite.

[0037] (Embodiment 1) In this embodiment, the configuration of the display device will be described using Figures 1 and 2.

[0038] Figure 1(A) is a schematic cross-sectional view of the display device shown in this embodiment. Substrate 40 and Substrate 42 Between them are light-emitting elements 20 and 22. The light-emitting element 20 has a first electrode 10 and an EL layer 1 It has 6 and a second electrode 18. The light-emitting element 22 has a first electrode 12 and an EL layer 16, It has a second electrode 18. Furthermore, an insulating film 14 is formed to cover the ends of the first electrodes 10 and 12. The light-emitting element 20 has a protective film 28 on it. The protective film 28 and the substrate 42 are bonded together with an adhesive 44. The substrates 40, 42, adhesive 44, first electrodes 10, 12, and EL layer 16 are fixed in place. Details of the second electrode 18 and the insulating film 14 will be described in another embodiment.

[0039] Next, the vicinity of the light-emitting elements 20 and 22 will be explained using the enlarged cross-sectional view in Figure 1(B). The light-emitting element 20 has a first electrode 10, an EL layer 16 including a light-emitting layer, and a second electrode 18. The light-emitting element 22 has a first electrode 12, an EL layer 16, and a second electrode 18. Electrode 10 and electrode 12 are separated. Also, electrode 10 and electrode 1 An insulating film 14 is formed covering the end of the pole 12. That is, at the opening of the insulating film 14, the first Parts of the surfaces of electrode 10 and the first electrode 12 are exposed. Also, the light-emitting element 20 A protective film 28 is formed on 22, which includes an insulating film 24 and an insulating film 26 on the insulating film 24. ru.

[0040] Insulating film 24 and insulating film 26 are made of aluminum oxide, gallium oxide, and germanium oxide, respectively. Nium, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, HAF oxide Oxides such as nium and tantalum oxide can be formed in single or multilayer structures. Furthermore, insulating film 24 and insulating film 26 are each made of silicon nitride, aluminum nitride, and other nitrides. It can be formed using materials.

[0041] Furthermore, insulating film 24 and insulating film 26 are formed using the same oxide or nitride, respectively. Alternatively, insulating film 24 and insulating film 26 may be formed using different oxides or nitrides. For example, insulating film 24 and insulating film 26 may be shaped using aluminum oxide. This can be achieved. Alternatively, the insulating film 24 and insulating film 26 may be made of zirconium oxide. It can be formed using . Alternatively, insulating film 24 and insulating film 26 can be made from ammonium oxide, respectively. It can be formed using luminium and silicon nitride. Alternatively, insulating film 24 and insulating film The border film 26 can be formed using zirconium oxide and silicon nitride, respectively. .

[0042] The thickness of the insulating film 24 is 50 nm or more and 1000 nm or less, preferably 100 nm or more and 30 nm or less. It can be 0 nm or less. Also, the film thickness of the insulating film 26 is 1 nm or more and 100 nm or less. Preferably, the wavelength can be between 5 nm and 50 nm.

[0043] Furthermore, as shown in Figure 1(C), an insulating film 28_1 is formed on the second electrode 18. The film 24_1 and the insulating film 26_1 on the insulating film 24_1 are both thin, allowing for through-film penetration. Because the input is improved, it is possible to increase the productivity of the display device.

[0044] Insulating films 24 and 24_1 are formed using the sputtering method. Also, insulating films 26 and 26 _1 is Atomic Layer Deposition method (ALD method) It is formed using [this method].

[0045] The ALD method involves maintaining atmospheric pressure or reduced pressure inside the deposition chamber and using a raw material gas (e.g., oxidation) for the reaction. The film is formed by sequentially introducing the agent and precursor into the deposition chamber and repeatedly introducing the raw material gas. The process is carried out as follows: The first raw material gas is adsorbed onto the surface to be formed to create the first layer, and the second raw material gas is introduced into the deposition chamber. By introducing it, the first layer and the second raw material gas react, and the second layer is laminated on top of the first layer. A thin film is then formed. This process is repeated multiple times while controlling the order in which the raw material gases are introduced until the desired thickness is reached. By repeating the process, a thin film with excellent step coverage can be formed.

[0046] Furthermore, the ALD method uses a thermal reaction as a means of activating part or all of the raw material gas. Thermal ALD (Advanced Laser Development) and PEALD (Plasma Enhancing) are methods that utilize thermal ALD and plasma reactions. (Plasma-Assisted ALD) method or PAALD (Plasma-Assisted ALD) method There are several advantages to the PEALD method compared to the thermal ALD method. Yes, it allows for film formation at room temperature. Furthermore, it has the effect of increasing the film formation rate and making the film denser. It has effects such as making it so.

[0047] By stacking insulating films using different film deposition methods, the diffusion of impurities such as water and oxygen can be controlled. A protective film that can reduce diffusion can be formed. Furthermore, the ALD method allows for film deposition at low temperatures. The EL layer contained in the light-emitting element has low heat resistance. Therefore, the insulating films 24, 24_1 and 26, 26_1, which function as protective films, are It is preferable to form it at a relatively low temperature, typically below 100°C, using the sputtering method and A The LD method is suitable.

[0048] When insulating films 24, 24_1 and insulating films 26, 26_1 are aluminum oxide films, The film densities of 24, 24_1 and insulating films 26, 26_1 are 2.5 g / cm³, respectively. 3 The above 3 0.95g / cm³ 3It is preferably less. The film density can be measured using X-ray reflectometry (XR R:X-Ray Reflectometry).

[0049] The insulating films 24 and 24_1 have less amount of impurities such as carbon compared to the insulating films 26 and 26_1 . In other words, the insulating films 26 and 26_1 have more amount of impurities such as carbon compared to the insulating films 24 and 24_1 . The quantification of impurities can be performed using X-ray photoelectron spectroscopy (XPS:X-ray Photoelectron Spectroscopy). .

[0050] When the film formation temperature of the ALD method is low, a part of the precursor does not react and remains as an impurity . On the other hand, the sputtering method forms a film by physically depositing a part of the target . Therefore, it is difficult for impurities to be mixed into the film

[0051] From the above, by forming the insulating films 24 and 24_1 using the sputtering method and forming the insulating films 26 and 26_1 using the ALD method , the insulating films 24 and 24_1 have less amount of impurities compared to the insulating films 26 , 26_1

[0052] The water vapor transmission rate of the protective films 28 and 28_1 is less than 1×10 -2 g / (m 2 ·day), preferably 5×10 -3 g / (m 2 ·day) or less, more preferably 1×10 -4 g / ( m 2 ·day) or less, even more preferably 1×10 -5 g / (m 2 ·day) or less, and even more preferably 1×10 -6 g / (m 2It is less than or equal to (day). If the water vapor transmission rate is low, it is low. The protective films 28 and 28_1 function as moisture-proof films. As a result, external light sources are prevented from reaching the light-emitting element. This can reduce the diffusion of water.

[0053] In Figure 1(B), the protective film 28 has a laminated structure of insulating film 24 and insulating film 26. However, multiple sets of insulating film 24 and insulating film 26 may be laminated. For example, insulating film 24, The insulating film 26, insulating film 24, and insulating film 26 may be stacked in that order.

[0054] Here, we will explain the effects of a protective film 28 and a method for producing the same, which are aspects of the present invention. Figure 2(A) is an enlarged cross-sectional view of the insulating film 24 formed using the sputtering method. The insulating film 24 formed by the sputtering method is formed by spraying sputtering gas onto a sputtering target. The sputtering target components are deposited onto the surface to be formed by puttering. Therefore, The deposited film has a low level of impurities.

[0055] However, in the sputtering method, the components of the sputtering target are physically shaped Because it is deposited on the surface, the deposited film is easily affected by the shape of the surface to be formed. Formation of insulating film 24 The second electrode 18, which has a surface, has a region 18a that overlaps with the insulating film 14 and a region that does not overlap with the insulating film 14. It has a region 18b. The surface of the region 18a that overlaps with the insulating film 14 is oblique to the substrate. On the other hand, the surface of region 18b that does not overlap with the insulating film 14 is parallel to the substrate. Therefore, in the insulating film 24, the region formed on region 18a is a low-density region 24a. It is easily damaged. On the other hand, in the insulating film 24, the region 24b formed on region 18b is low density Region 24a is almost entirely absent.

[0056] In the low-density region 24a, water, oxygen, etc., diffuse easily. Therefore, the sputtering method... Even if a protective film is formed with a single layer of insulating film 24 using the above method, water and acid from the outside can reach the light-emitting element. It is difficult to prevent the diffusion of elements, etc.

[0057] When an insulating film 26 is formed on the insulating film 24 using the ALD method, as shown in Figure 2(B), It is possible to reduce the proportion of low-density regions 24a in the insulating film 24. Method D is a single-atom layer deposition method and has high coverage, so insulation formed by sputtering is superior. This is thought to be because the insulating film 26 is deposited while filling the gaps in the low-density region 24a of the film 24. Furthermore, even if the insulating film 24 includes a low-density region 2 The insulating film 26 is formed so as to cover 4a, and the insulating film 26 acts as a protective film against the diffusion of impurities. It functions in a way that prevents the diffusion of water, oxygen, etc., from the outside to the light-emitting element.

[0058] Based on the above, an insulating film is formed on the light-emitting element using the sputtering method, and then ALD By forming an insulating film using this method, a protective film is formed in which the diffusion of water, oxygen, etc. is reduced. This can be done. Furthermore, by forming the protective film on the light-emitting element, water from the outside to the light-emitting element can be prevented. This makes it possible to prevent the diffusion of oxygen and other elements, thereby reducing the degradation of the light-emitting element. Furthermore, it is possible to manufacture a display device with highly reliable light-emitting elements.

[0059] (Embodiment 2) In this embodiment, another form of the display device will be described using Figure 3. Figure 3(A) This is a schematic cross-sectional view of the display device shown in this embodiment. The display device shown in Figure 3 has a protective film 2 The present invention is characterized by having colored films 30 and 32 between 8 and the adhesive 44.

[0060] The vicinity of the light-emitting elements 20 and 22 will be explained using the enlarged cross-sectional view in Figure 3(B). Protection A colored film 30, 32 is provided on the film 28. The colored film 30 is connected to the light-emitting element 2 via the protective film 28. It overlaps with 0. The colored film 32 overlaps with the light-emitting element 22 via the protective film 28.

[0061] Details of the colored films 30 and 32 will be described in later embodiments.

[0062] The colored films 30 and 32 were formed by applying the composition onto the protective film 28, exposing and developing it, and then heating it. It can be formed by a photolithography process. Alternatively, a colored film 30, 32 is formed by ejecting the composition by an inkjet method and then performing a heat treatment. It is possible.

[0063] Since the colored films 30 and 32 are formed using the composition, if the composition contains water or the like, If the water diffuses into the light-emitting element, the element will deteriorate.

[0064] However, the protective film 28 can reduce the diffusion of water, oxygen, etc. from the outside. Therefore, even if a colored film is directly formed on the protective film 28, water and other substances contained in the material will light up the light-emitting element. It is less likely to diffuse into the surrounding environment, thus reducing the degradation of the light-emitting element.

[0065] In a display device, the thickness of the display device is reduced by forming a colored film on the light-emitting element. This is possible. In particular, in high-resolution display devices of 1000 ppi or higher, the opposing substrate can be colored. When applying a film or similar material, alignment between the light-emitting element and the colored film is necessary. The more there are, the more difficult it becomes to align the light-emitting element with the colored film, leading to a decrease in yield. On the other hand, by forming a colored film on the light-emitting element, alignment between the light-emitting element and the colored film is unnecessary. Therefore, it is possible to improve the yield.

[0066] Furthermore, in high-resolution display devices, if the gap between the light-emitting element and the colored film is large, adjacent images will be affected. Light leakage occurs into the colored film applied to the base, negatively affecting the viewing angle characteristics. Therefore, in order to improve viewing angle characteristics, it is preferable to reduce the distance between the light-emitting element and the colored film. i. The display device shown in this embodiment can form a colored film on the light-emitting element via a protective film. Therefore, it is possible to reduce the distance between the light-emitting element and the colored film, thereby improving the viewing angle characteristics. It is possible.

[0067] (Embodiment 3) This embodiment describes an example of a display device according to one aspect of the present invention.

[0068] In the following, a more specific configuration example of a display device according to one aspect of the present invention will be described with reference to the drawings. I will explain.

[0069] <Display device> Figure 4 is a perspective view of the display device 710.

[0070] The display device 710 has substrates 751a and 752a. In Figure 4, substrate 752a Only the outline is shown with a dashed line.

[0071] The display device 710 has a display unit 761a and a circuit unit 76 between the substrates 751a and 752a. It has 2a, wiring 765a, etc. Also, IC764a and FPC763a on substrate 751a. This shows an example of its implementation. Therefore, the display device 710 is called a display module. It is also possible.

[0072] The circuit section 762a can be, for example, a circuit that functions as a scan line driving circuit.

[0073] Wiring 765a supplies signals and power to either the display unit 761a or the circuit unit 762a, respectively. It has the function of inputting signals and power from an external source via the FPC763a, or Input is received from C764a.

[0074] Furthermore, in Figure 4, substrate 751a is processed using the COG (Chip On Glass) method, etc. This shows an example where IC764a is provided. IC764a is, for example, a scan line drive circuit. ICs that function as roads or signal line drive circuits can be applied. (Note IC764) 'a' can be omitted if not necessary. Also, IC764a is COF (Chip On It may also be implemented on the FPC763a using a film-based method or similar.

[0075] Figure 4 shows a magnified view of a part of the display unit 761a. The display unit 761a has multiple The conductive films 121 of the display element are arranged in a matrix.

[0076] Figure 5(A) shows a schematic cross-sectional view of the display unit of the display device 710.

[0077] The display device 710 has a transistor 741a between substrate 751a and substrate 752a, Ranging element 741b, display element 721R, display element 721G, display element 721B (as shown in the figure) It has (not), etc. Substrate 751a and substrate 752a are bonded together by adhesive layer 151a. Transistors 741a, 741b, and display element 721R, etc., are insulated with insulating film 7 It is located on 31.

[0078] Display element 721R, display element 721G, and display element 721B of the display device 710 (Not shown) Each has a light-emitting element that exhibits a different color, and the substrate 752a side (display surface) It emits light (to the side).

[0079] Figure 5(B) shows transistors 741a and 741b in Figure 5(A). A magnified view of the display element 721R and its vicinity is shown. Note that the display elements 721B, etc. are shown here. Since a configuration similar to that of the display element 721R can be used, the explanation is omitted here. The following information can be used as reference.

[0080] Transistors 741a and 741b are provided on the insulating film 731. Transistor 741a is connected to transistor 741b, and is a pixel selection transistor. It functions as such. In addition, transistor 741b is connected to display element 721R, and the display element It functions as a drive transistor to control the current flowing through child 721R.

[0081] Transistor 741a has a conductive film 111 that functions as a gate, and a gate insulating film A functional insulating film 132 and a semiconductor film 112a, which function as either a source or a drain. A conductive film 113a, and a conductive film 113b that functions as either a source or a drain, It has. Transistor 741a, shown in Figure 5(B), etc., is a bottom-gate type channel edge It is a transistor with a cyanotype structure.

[0082] Furthermore, an insulating film 133 is provided covering the transistor 741a. It functions as a protective film to protect transistor 741a.

[0083] Transistor 741b has a semiconductor film 112 on the conductive film 113b via an insulating film 133. b is provided, and conductive films 113c and 113d are in contact with the semiconductor film 112b. A portion of the conductive film 113b functions as the gate of transistor 741b. Insulating film 133 A portion of it functions as the gate insulating film of transistor 741b. Conductive film 113c and conductive The film 113d functions as either the source or drain of transistor 741b.

[0084] Thus, transistor 741b is located above transistor 741a. Furthermore, the conductive film 113b is connected to the source or drain of transistor 741a, and It also serves as the gate for transistor 741b. With this configuration, transistor 74 Compared to the case where transistors 1a and 741b are placed side by side on the same plane, This can reduce the area occupied by them.

[0085] Furthermore, the conductive film 113d, a portion of the insulating film 133, and a portion of the conductive film 113b are laminated together. These elements constitute the capacitive element 130. The capacitive element 130 functions as the holding capacitance of the pixel. ru.

[0086] Insulating film 136 and insulating film 134 are provided covering transistor 741b. The edge film 136 functions as a protective film to protect the transistor 741b. The insulating film 134 is It is preferable that the insulating film 136 and insulating film 134 function as a planarizing film. Either one does not need to be provided if it is unnecessary.

[0087] A conductive film 121 is provided on the insulating film 134. The conductive film 121 is provided on the insulating film 134 and The conductive film 113d is electrically connected to the insulating film 136 through an opening provided in the insulating film 136. Furthermore, an insulating film 135 is provided to cover the edges of the conductive film 121 and the openings. An EL layer 122R and a conductive film 123 are laminated on film 135 and conductive film 121. A protective film 125 is provided on the conductive film 123. The protective film 125 is as follows: By using the protective film shown, the progression of degradation of display elements 721R, 721G, and 721B is suppressed. It is possible.

[0088] The conductive film 121 functions as a pixel electrode of the display element 721R. The conductive film 123 is common It functions as an electrode. The EL layer 122R has at least an emissive layer.

[0089] The display element 721R is a top-emitting type that emits light on the opposite side from the surface to be formed. This is a light-emitting element of the (sensor type) type. The conductive film 121 is a conductive film that reflects visible light, and is conductive A conductive film that transmits visible light can be used for the film 123.

[0090] Figures 5(A) and (B) show examples where different EL layers are created for display elements exhibiting different colors. This shows that each display element has an EL layer which emits light of a different color. .

[0091] The EL layer 122R of the display element 721R has, for example, a light-emitting layer that emits red light. As shown above, by creating different EL layers for display elements that exhibit different colors, each display element The color purity of the light emitted by the device can be increased. Furthermore, by using a colored film (color filter), etc. Compared to the case where multiple light-emitting layers are used, the light extraction efficiency can be increased. Also, for example, multiple light-emitting layers can be used. Compared to the case where stacked light-emitting elements that emit white light are used, the driving voltage can be lowered.

[0092] Here, it is used for display elements 721R, 721G, 721B, etc. This section will explain the configuration of the light-emitting element.

[0093] Figure 6(A) shows how to create all the layers that make up the EL layer between display elements exhibiting different colors. This shows an example of how it can be divided.

[0094] The display element 721R has an EL layer 122R between the conductive film 121 and the conductive film 123. In Figure 6(A), the EL layer 122R is connected to the carrier injection layer 141R from the conductive film 121 side. , carrier transport layer 142R, light-emitting layer 143R, carrier transport layer 144R, and carrier It has an inlet of 145R.

[0095] For example, if conductive film 121 is the anode and conductive film 123 is the cathode, then the carrier injection layer 1 A material with high hole injection properties is used in 41R, and a material with high hole transport properties is used in the carrier transport layer 142R. Using a carrier transport layer 144R made of a material with high electron transport properties, and a carrier injection layer 145 A material with high electron injection potential is used for R. Note that when switching the anode and anode, each layer is inserted. They can be replaced.

[0096] Similarly, the EL layer 122B of the display element 721B has a carrier injection layer 141B, and a carrier injection layer Transport layer 142B, light-emitting layer 143B, carrier transport layer 144B, and carrier injection layer 145B It has a carrier injection layer 141G, and the EL layer 122G of the display element 721G has a carrier injection layer 141G. Rear transport layer 142G, light-emitting layer 143G, carrier transport layer 144G, and carrier injection layer 1 It has 45G.

[0097] Thus, the EL layer 122R, EL layer 122B, and EL layer 122G are treated independently. By forming them in this way, each can adopt an optimized element structure. For example, E Each of the L layer 122R, EL layer 122B, and EL layer 122G is made of a different material. The layer used can also be applied. This allows for improvements in color purity, luminous efficiency, light extraction efficiency, etc. It can be considered extremely high.

[0098] Note that, in this diagram, the thickness of each layer in each EL layer is shown to be approximately the same, The thickness of each layer may differ for each display element.

[0099] Figure 6(B) shows a case where only the light-emitting layer is made differently for each display element, while the other layers are used in common. An example of a combination is shown.

[0100] Across each display element, carrier injection layer 141, carrier transport layer 142, carrier transport layer A 144 and a carrier injection layer 145 are provided.

[0101] This configuration allows for a simplification of the manufacturing process.

[0102] Furthermore, the carrier injection layer 141, the carrier transport layer 142, the carrier transport layer 144, and One or more of the carrier injection layers 145 may be created separately.

[0103] Furthermore, a display element in which a phosphorescent material is applied to the light-emitting layer, and a display element in which a fluorescent material is applied to the light-emitting layer When display elements are mixed, separate layers are created that are not used in common, and the other layers are used together. It is preferable to use it continuously.

[0104] Figure 6(C) shows an example where the same EL layer configuration is used between display elements exhibiting different colors. Specifically, it consists of an EL layer 122W that emits white light and a colored film on each display element. This shows an example of a configuration that emits light of different colors when combined.

[0105] Display element 721R, display element 721B, and display element 721G each have a colored film 15 It has 2R, a colored film 152B, or a colored film 152G.

[0106] EL layer 1 of display element 721R, display element 721B, and display element 721G 22W is provided across different display elements. Therefore, the EL layer 122W is manufactured separately. The formation process can be simplified compared to the previous method. Also, the EL layer between display elements exhibiting different colors Compared to the case where different types are produced, the minimum processing dimensions and alignment accuracy during the formation of the EL layer are different. Since there is no need to consider the in-rule, the distance between adjacent pixels can be made smaller, resulting in higher resolution. It is possible to do so.

[0107] Furthermore, by using a conductive film having semi-permeable and semi-reflective properties for the conductive film 123, microcables can be used. A viti (micro-resonator) structure may be realized. In this case, conductive film 121 and conductive film 1 An optical adjustment layer that transmits visible light is provided to adjust the optical distance between 23 and the other element. This is also acceptable. It is preferable that the optical adjustment layer has different thicknesses for each display element of different colors. stomach.

[0108] The combination of the EL layer 122 that emits white light, the microcavity structure, and the colored film This allows light with extremely high color purity to be emitted towards the display surface.

[0109] Figure 6(D) shows a bottom emission type that emits light towards the surface to be formed. This shows an example of when display elements are applied. Here, as in Figure 6(B), each display element This shows an example where only the light-emitting layer is created separately in between.

[0110] In Figure 6(D), a conductive film that transmits visible light is used for conductive film 121, and conductive film 123 A conductive film that reflects visible light is used. This allows the display element 721R and the display element 721 B and the display element 721G each emit light towards the conductive film 121.

[0111] Figure 6(E) shows an example where the same EL layer configuration is used between display elements exhibiting different colors. Specifically, it combines an EL layer 122W that emits white light with the colored film of each display element. This shows an example of a configuration that emits light of different colors together.

[0112] Figure 6(E) is a modified example of Figure 6(C), and the display element 721R, display element 721B, and The display element 721G consists of a colored film 152R, a colored film 152B, and a colored film 152G, respectively. It has a protective film 125.

[0113] The above is a description of an example of a light-emitting element configuration.

[0114] Figure 5(C) shows a circuit diagram corresponding to the configuration shown in Figure 5(B). Figure 5(C) is one This corresponds to the circuit diagram of a pixel (sub-pixel).

[0115] For example, the gate (conductive film 111) of transistor 741a is given a gate signal VG. The wiring is electrically connected to one of the sources or drains of transistor 741a (conductive The film 113a) is electrically connected to the wiring to which the source signal VS is supplied. When a potential VH is applied to either the source or drain (conductive film 113c) of the ZISTRA 741b, It is electrically connected to the wiring. Also, the common electrode (conductive film 123) of the display element 721R is It is electrically connected to the wiring to which a potential VL is applied.

[0116] Furthermore, the pixel configuration is not limited to this, and various circuit configurations can be used.

[0117] <Transistor stacked structure> The following describes other configuration examples of a stacked structure of two transistors. Each example configuration shown can be used in appropriate combination with the configurations exemplified in the cross-sectional configuration example of the display device described above. It is possible.

[0118] <Configuration Example 1> Figure 7(A) shows an example where transistors 741c and 741d are stacked. be.

[0119] Transistor 741c is a second gate of transistor 741a, as illustrated in Figure 5(B). This is a transistor provided with a conductive film 111b that functions as a transistor. The conductive film 111b is It is provided in a position that overlaps with the semiconductor film 112a, and is provided between the insulating film 133 and the insulating film 136. It is.

[0120] Transistor 741d is a second gate of transistor 741b, as illustrated in Figure 5(B). This is a transistor provided with a conductive film 111c that functions as a transistor. The conductive film 111c is It is provided in a position that overlaps with the semiconductor film 112b and is provided on the insulating film 136.

[0121] If a transistor has two gates separated by a semiconductor film, the two gates will be at the same potential. By applying this, the on-current of the transistor can be increased. Also, by applying this to one of the gates By applying a potential to control the threshold voltage and a potential to drive the other, The threshold voltage of the transistor can be controlled.

[0122] <Configuration Example 2> Figure 7(B) shows an example where transistors 741e and 741b are stacked. be.

[0123] The transistor 741e has its gate above the semiconductor film 112a, a so-called transistor It is a top-gate type transistor.

[0124] The transistor 741e has a semiconductor film 112a on an insulating film 731, and on the semiconductor film 112a An insulating film 132, a conductive film 111 on the insulating film 132, a semiconductor film 112a and a conductive film 11 It comprises an insulating film 137 covering 1, and conductive films 113a and 113b on the insulating film 137. do.

[0125] Transistor 741e has a semiconductor film 112a and a conductive film 113a or conductive film 113b Parasitic capacitance between them, and parasitic capacitance between conductive film 111 and conductive film 113a or conductive film 113b This is preferable because it can reduce [the problem].

[0126] Figure 7(B) shows an example where the insulating film 132 is formed only in the portion that overlaps with the conductive film 111. As shown in Figure 7(D), the insulating film 132 covers the edge of the semiconductor film 112a. It can also be used as a composition.

[0127] <Configuration Example 3> Figure 7(C) shows an example where transistors 741f and 741b are stacked. be.

[0128] Transistor 741f functions as a second gate in addition to transistor 741e. It has a conductive film 111b. The conductive film 111b is connected to the semiconductor film 112a via an insulating film 138. They are arranged in a stacked configuration.

[0129] Figure 7(C) shows an example where the insulating film 132 is formed only in the portion that overlaps with the conductive film 111. As shown in Figure 7(E), the insulating film 132 covers the edge of the semiconductor film 112a. It can also be used as a composition.

[0130] <Configuration Example 4> Figure 8(A) shows an example where transistors 741a and 741g are stacked. be.

[0131] Transistor 741g has its gate above the semiconductor film 112b, a so-called transistor It is a top-gate type transistor.

[0132] Transistor 741g has a semiconductor film 112b on an insulating film 133 and a semiconductor film 112a on An insulating film 139 that functions as a gate insulating film, and a conductive film 111b on the insulating film 139, and An insulating film 136 covering the conductive film 112a and the conductive film 111b, and a conductive film 11 It has 3c and a conductive film 113d.

[0133] Conductive film 113b and conductive film 111b serve as gates for transistor 741g, respectively. It works.

[0134] In the example shown in Figure 8(A), the semiconductor film 112b, the conductive film 113b, and the insulating film 133 are all present. The capacity is formed by the section. Therefore, this capacity may be used as the holding capacity, in that case In this case, it is not necessary to provide a separate capacitive element.

[0135] Note that in FIG. 8(A), an example is shown where the insulating film 139 is formed only at the portion overlapping with the conductive film 111b. However, similar to the insulating film 132 in FIG. 7(E) etc., it may be provided to cover the end portion of the semiconductor film 112b.

[0136] <Configuration Example 5> FIG. 8(B) shows an example when the transistor 741e and the transistor 741g are stacked. The descriptions of the transistor 741e and the transistor 741g can be incorporated from the above.

[0137] By adopting such a configuration, a display device with extremely reduced parasitic capacitance can be realized.

[0138] <Configuration Example 6> FIG. 8(C) shows an example when the transistor 741f and the transistor 741g are stacked. The descriptions of the transistor 741f and the transistor 741g can be incorporated from the above.

[0139] By adopting such a configuration, a display device with extremely reduced parasitic capacitance can be realized.

[0140] [[ID=A]]<Configuration Example 7> FIG. 8(D) shows an example when the transistor 741f and the transistor 741h are not stacked. The description of the transistor 741f can be incorporated from the above.

[0141] The transistor 741h has a semiconductor film 112b on the insulating film 138, an insulating film 139 on the semiconductor film 112b, a conductive film 111b on the insulating film 139, an insulating film 137 covering the semiconductor film 112b and the conductive film 111b, and conductive films 113c and 113d on the insulating film 137. <A

[0142] The above is the description of the example of the stacked structure of the transistor.

[0143] <About each component> The following sections will explain each of the components listed above.

[0144] <Circuit board> A substrate having a flat surface can be used for the display device. The substrate on the side from which the light is extracted uses a material that transmits the light. For example, glass, quartz, etc. Materials such as lamination, sapphire, and organic resins can be used.

[0145] By using a thin substrate, it is possible to make the display device lighter and thinner. By using a substrate with a thickness sufficient to be flexible, a flexible display device can be realized. Cut.

[0146] Furthermore, the substrate on the side from which light is not extracted does not need to be translucent, as mentioned above. In addition to the base plate, metal substrates can also be used. Metal substrates have high thermal conductivity, and the entire substrate Because it can easily conduct heat to the body, it can suppress localized temperature increases in the display device, which is advantageous. It seems that in order to obtain flexibility and bendability, the thickness of the metal substrate should be between 10 μm and 200 μm. The lower value is preferable, and a thickness of 20 μm or more and 50 μm or less is more preferable.

[0147] There are no particular limitations on the materials that make up the metal substrate, but for example, aluminum, copper, and nickel are used. Preferably, metals such as buckle, or alloys such as aluminum alloy or stainless steel are used. It is possible.

[0148] In addition, insulating treatment is performed by oxidizing the surface of the metal substrate or forming an insulating film on the surface. A substrate that has been treated may be used. For example, a coating method such as spin coating or dip coating, or an electric coating method may be used. An insulating film may be formed using a deposition method, an evaporation method, a sputtering method, or the like, or the substrate may be left in an oxygen atmosphere or heated, or an oxide film may be formed on the surface of the substrate by an anodic oxidation method or the like.

[0149] Examples of materials having flexibility and transparency to visible light include glass having a flexible thickness, polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyvinyl chloride resin, polytetrafluoroethylene (PTFE) resin, and the like. In particular, it is preferable to use a material having a low coefficient of thermal expansion. For example, polyamideimide resin, polyimide resin, PET, etc. having a coefficient of thermal expansion of 30×10⁻⁶ / K or less can be preferably used. Also, a substrate in which glass fibers are impregnated with an organic resin or a substrate in which an inorganic filler is mixed with an organic resin to lower the coefficient of thermal expansion can be used. A display device using such a substrate can be made lightweight because the substrate is light in weight. -6

[0150]

[0151]

[0152] Examples include sazole fibers, glass fibers, or carbon fibers. Examples of glass fibers include E-glass. Examples include glass fibers using S glass, D glass, Q glass, etc. These are woven fabrics. Alternatively, it can be used in the form of a nonwoven fabric, and a structure can be made by impregnating this fiber with resin and hardening the resin. It may be used as a flexible substrate. As a flexible substrate, it may be made of a fiber and a resin. Using such a structure improves reliability against damage caused by bending and localized pressure, therefore it is preferred. It's nice.

[0151] Alternatively, a thin, flexible material such as glass or metal can be used as the substrate. Alternatively, a composite material may be used in which glass and resin materials are bonded together with an adhesive.

[0152] A hard coat film (for example) that protects the surface of the display device from scratches, etc., on a flexible substrate. (e.g., silicon nitride, aluminum oxide) or a film made of a material that can distribute pressure (for example, Ara It may also be possible to laminate materials such as mid-resin. In addition, the lifespan of the display elements may be reduced due to moisture, etc. To suppress this, a flexible substrate may be laminated with an insulating film that has low water permeability. For example, silicon nitride, silicon oxide nitride, silicon oxide nitride, aluminum oxide, nitride Inorganic insulating materials such as aluminum can be used.

[0153] The substrate can also be made by stacking multiple films. In particular, a glass substrate can be used as the substrate. This improves the barrier properties against water and oxygen, making it a more reliable display device. ru.

[0154] <Transistor> A transistor consists of a conductive film that functions as the gate electrode, a semiconductor film, and a source electrode. A functional conductive film, a conductive film that functions as a drain electrode, and a gate insulating film that functions as a gate insulating film. It has an insulating film. The above shows the case where a bottom-gate transistor is applied. It is.

[0155] The structure of the transistor in the display device according to one aspect of the present invention is not particularly limited. For example, it could be a planar transistor or a staggered transistor. Furthermore, it may be an inverse staggered transistor. Also, a top-gate type or a bottom-gate type may be used. Any of the following transistor structures may be used. Alternatively, gate electrodes may be provided above and below the channel. It's okay if it's done that way.

[0156] The crystallinity of semiconductor materials used in transistors is not particularly limited; amorphous semiconductors are also available. Crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or semiconductors with a crystalline region in part) Any semiconductor (having a region) may be used. If a semiconductor with crystalline properties is used, This is preferable because it suppresses the degradation of the DISTA characteristics.

[0157] Furthermore, semiconductor materials used in transistors include, for example, elements of Group 14 (silicon). Compound semiconductors or oxide semiconductors (such as germanium) can be used as semiconductor films. Typical examples include semiconductors containing silicon, semiconductors containing gallium arsenide, or acids containing indium. This technology can be applied to synthetic semiconductors and other materials.

[0158] In particular, it is preferable to use oxide semiconductors with a larger band gap than silicon. Using semiconductor materials with a wider band gap and lower carrier density than silicon This is preferable because it reduces the current when the transistor is off.

[0159] In particular, the semiconductor film has multiple crystalline portions, and the c-axis of the crystalline portion is the plane on which the semiconductor film is formed. Alternatively, the crystals are oriented roughly perpendicular to the upper surface of the semiconductor film, and grain boundaries can be observed between adjacent crystal regions. It is preferable to use an oxide semiconductor that cannot be manufactured.

[0160] Such oxide semiconductors do not have grain boundaries, which is why they do not respond when the display device is bent. This suppresses the formation of cracks in the oxide semiconductor film due to force. Such oxide semiconductors are suitably used in display devices and other applications that are flexible and designed to be bent. It is possible.

[0161] Furthermore, by using an oxide semiconductor with such crystalline properties as a semiconductor film, electrical properties This suppresses fluctuations in performance, enabling the creation of highly reliable transistors.

[0162] Furthermore, transistors using oxide semiconductors with a larger band gap than silicon, Due to its low off-current, the charge stored in the capacitor connected in series with the transistor can be stored for a long period of time. It is possible to hold it over a period of time. By applying such a transistor to a pixel, It is also possible to stop the drive circuit while maintaining the gradation of the image displayed in each display area. As a result, it is possible to realize a display device with extremely reduced power consumption.

[0163] The semiconductor film is, for example, made of at least indium, zinc, and M(aluminum, titanium, gallium). Um, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium Includes a film represented as an In-M-Zn oxide containing metals such as um or hafnium. This is preferable. Furthermore, it reduces variations in the electrical characteristics of transistors using the oxide semiconductor. Therefore, it is preferable to include a stabilizer along with them.

[0164] As stabilizers, metals such as gallium, tin, and HAF are used, including the metals listed in M ​​above. Examples include nium, aluminum, or zirconium. Also, other stabilizers include... These are lanthanides: lanthanum, cerium, praseodymium, neodymium, samarium, Europium, gadolinium, terbium, dysprosium, holmium, erbium, Examples include thulium, ytterbium, and lutetium.

[0165] Examples of oxide semiconductors that make up semiconductor films include In-Ga-Zn oxides, In- Al-Zn oxides, In-Sn-Zn oxides, In-Hf-Zn oxides, In-L α-Zn oxides, In-Ce-Zn oxides, In-Pr-Zn oxides, In-Nd -Zn oxides, In-Sm-Zn oxides, In-Eu-Zn oxides, In-Gd- Zn oxides, In-Tb-Zn oxides, In-Dy-Zn oxides, In-Ho-Z n-based oxides, In-Er-Zn-based oxides, In-Tm-Zn-based oxides, In-Yb-Zn In-Lu-Zn ​​oxides, In-Sn-Ga-Zn oxides, In-Hf- Ga-Zn oxides, In-Al-Ga-Zn oxides, In-Sn-Al-Zn oxides The materials used include In-Sn-Hf-Zn oxides and In-Hf-Al-Zn oxides. can.

[0166] In this context, In-Ga-Zn oxides are those that have In, Ga, and Zn as their main components. It means an oxide, and the ratio of In, Ga, and Zn is not specified. Other metal elements besides n may be present.

[0167] Furthermore, the semiconductor film and the conductive film may have the same metal element among the above oxides. By using the same metal element for both the conductive film and the conductive layer, manufacturing costs can be reduced. For example, by using metal oxide targets with the same metal composition, manufacturing costs can be reduced. It is possible to process semiconductor films and conductive films using etching gas or etching. The same liquid can be used for both. However, the semiconductor film and the conductive film must contain the same metal element. Even if the same process is used, the composition may differ. For example, during the manufacturing process of transistors and capacitive elements. In some cases, metal elements may be detached from the film, resulting in a different metallic composition.

[0168] The oxide semiconductor constituting the semiconductor film has an energy gap of 2 eV or more, preferably 2 It is preferable that the energy is 0.5 eV or more, and more preferably 3 eV or more. - By using oxide semiconductors with a wide gap, the off-current of the transistor can be reduced. It is possible.

[0169] When the oxide semiconductor constituting the semiconductor film is In-M-Zn oxide, In-M-Zn oxide The atomic ratio of metal elements in a sputtering target used to deposit thin films is In≧M It is preferable that Zn≧M is satisfied. In terms of atomic ratio, In:M:Zn = 1:1:1, In:M:Zn = 1:1:1.2, In :M:Zn=3:1:2, 4:2:4.1, In:M:Zn=5:1:7, etc. are preferred. Furthermore, the atomic ratio of the deposited semiconductor film is considered to be an error for the sputtering process described above. This includes a variation of plus or minus 40% in the atomic ratio of metallic elements contained in the GET.

[0170] As the semiconductor film, an oxide semiconductor film with a low carrier density is used. For example, the semiconductor film is , carrier density is 1 × 10 17 / cm 3 The following is preferably 1 × 10 15 / cm 3 The following, More preferably 1 × 10 13 / cm 3 More preferably 1 × 10 11 / cm 3 below, More preferably 1 × 10 10 / cm 3 It is less than 1 × 10 -9 / cm 3 The above career High-density oxide semiconductors can be used. Such oxide semiconductors can be made into high-purity intrinsic materials. This is essentially a high-purity intrinsic oxide semiconductor. This results in a low impurity concentration and defect levels. Due to its low density, it can be said to be an oxide semiconductor with stable properties.

[0171] Furthermore, this is not limited to the semiconductor characteristics and electrical characteristics (field effect) of the transistor as needed. A suitable composition should be used depending on the fruit mobility, threshold voltage, etc. To obtain the semiconductor characteristics of a transistor, the carrier density, impurity concentration, and defects of the semiconductor film are important. It is preferable to ensure that the density, the atomic ratio of metal elements to oxygen, the interatomic distance, and other parameters are appropriate. stomach.

[0172] In oxide semiconductors that make up semiconductor films, silicon and carbon are among the Group 14 elements. When present, oxygen vacancies increase in the semiconductor film, causing it to become n-type. The concentrations of silicon and carbon in the body membrane (concentrations obtained by secondary ion mass spectrometry) are measured by 2 ×10 18 atoms / cm 3 The following is preferably 2 × 10 17atoms / cm 3 The following and do.

[0173] Furthermore, alkali metals and alkaline earth metals generate carriers when they bond with oxide semiconductors. This can occur, and the off-current of the transistor may increase. Alkali metals or alkaline earth metals obtained by secondary ion mass spectrometry in body membranes The concentration of 1 × 10 18 atoms / cm 3 The following is preferably 2 × 10 16 atom / cm 3 Do the following:

[0174] Furthermore, if nitrogen is present in the oxide semiconductor that makes up the semiconductor film, the electrons, which are carriers, This occurs, increasing carrier density and making it easier for the oxide to become n-type. As a result, nitrogen-containing oxides are produced. Transistors using semiconductors tend to exhibit normally-on characteristics. Therefore, when using a semiconductor film... The nitrogen concentration obtained by secondary ion mass spectrometry is 5 × 10⁻⁶ 18 atoms / cm 3 The following is preferable:

[0175] Furthermore, the semiconductor film may have a non-single-crystal structure, for example. A non-single-crystal structure is CAAC. -OS(C-Axis Aligned Crystalline Oxide Sem iconductor, or C-Axis Aligned and AB-pl Anchored Crystalline Oxide Semiconductor Includes ctor, polycrystalline structure, microcrystalline structure, or amorphous structure. In non-single-crystal structures The amorphous structure has the highest defect level density, while CAAC-OS has the lowest defect level density.

[0176] Amorphous oxide semiconductor films, for example, have a disordered atomic arrangement and do not possess crystalline components. Alternatively, an amorphous oxide film may, for example, have a completely amorphous structure and have crystalline parts. do not have.

[0177] Furthermore, the semiconductor film has regions of amorphous structure, microcrystalline structure, polycrystalline structure, and CAA A mixed film may have two or more regions, including C-OS regions and single-crystal structures. The composite membrane is, for example, a monolayer structure containing two or more of the regions described above, or a compound membrane. It may have a layered structure.

[0178] Furthermore, the semiconductor film uses the aforementioned CAC-OS or CAC-metal oxide. It can be formed by doing so.

[0179] Transistors using CAC-OS are highly reliable. A transistor has high on-current and field-effect mobility, and low off-current, therefore it is different from a transistor. It has excellent characteristics. Therefore, CAC-OS is suitable for various applications, including displays. It is ideal for conductive devices.

[0180] Alternatively, silicon is preferred as the semiconductor in which the transistor channel is formed. It is fine. Amorphous silicon may be used as silicon, but crystalline silicon is particularly desirable. It is preferable to use silicon. For example, microcrystalline silicon, polycrystalline silicon, single-crystal silicon It is preferable to use materials such as n. In particular, polycrystalline silicon is suitable for lower temperatures compared to single-crystal silicon. It can be formed using [a specific method] and possesses higher field-effect mobility and higher reliability compared to amorphous silicon. By applying such polycrystalline semiconductors to pixels, the aperture ratio of the pixels can be improved. It is possible. Furthermore, even when an extremely high-resolution display unit is used, the gate drive circuit and source drive This makes it possible to form circuits on the same substrate as pixels, reducing the number of components that make up electronic devices. It is possible.

[0181] The bottom-gate transistor exemplified in this embodiment can reduce the manufacturing process. It is preferable. Also, by using amorphous silicon in this case, it is preferable to using polycrystalline silicon. Because it can be formed at low temperatures, it can be used as a material for wiring and electrodes in layers below semiconductor films, and as a substrate material. Because it is possible to use materials with low heat resistance, the range of material choices can be broadened. Example For example, extremely large-area glass substrates can be suitably used. On the other hand, top gate Transistors of this type tend to form impurity regions through self-alignment, resulting in variations in characteristics, etc. This is preferable because it can reduce [unclear]. In particular, polycrystalline silicon and monocrystalline silicon This is suitable when using such methods.

[0182] <Conductive film> In addition to the gate, source, and drain of a transistor, various wiring components make up a display device. Materials that can be used for conductive films such as electrodes include aluminum, titanium, and chromium. Molybdenum, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten. Examples include metals such as sten, or alloys in which these are the main component. A film containing the material can be used as a single layer or as a multilayer structure. For example, silicon A single-layer structure of an aluminum film containing a titanium film, a double-layer structure in which an aluminum film is laminated on a titanium film, A two-layer structure consisting of an aluminum film laminated on a stenescent film, copper-magnesium-aluminum. Two-layer structure with a copper film laminated on an alloy film, two-layer structure with a copper film laminated on a titanium film, tungsten A two-layer structure in which a copper film is laminated on top of a titanium film, a titanium film or titanium nitride film, and an aluminum film layered on top of that. A titanium film or copper film is laminated, and then a titanium film or titanium nitride film is formed on top of it. A three-layer structure, consisting of a molybdenum film or molybdenum nitride film, and an aluminum film layered on top of it. This is a three-layer structure in which a copper film is laminated, and a molybdenum film or molybdenum nitride film is formed on top of it. There are various types of constructions. Furthermore, oxides such as indium oxide, tin oxide, or zinc oxide may also be used. Furthermore, using copper containing manganese is preferable because it improves the controllability of the shape through etching. stomach.

[0183] Furthermore, examples of conductive materials that are translucent include indium oxide, indium tin oxide, and Conductive oxides such as zinc oxide, zinc oxide, and zinc oxide with added gallium or Graphene can be used. Alternatively, gold, silver, platinum, magnesium, nickel, and t Examples include sten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium. Metal materials or alloy materials containing such metal materials can be used. Alternatively, the nitrogen of the metal material can be used. Metallic compounds (e.g., titanium nitride) may also be used. When using these nitrides, they should be thinned to a degree that allows light to pass through. A laminated film of a material can be used as a conductive film. For example, a silver-magnesium alloy and an ink Using a multilayer film of tungsten oxide is preferable because it can improve conductivity. These include conductive films such as various wirings and electrodes that constitute the display device, and conductive elements that are present in the display elements. It can also be used for conductive films (conductive films that function as pixel electrodes or common electrodes).

[0184] <Insulated film> Examples of insulating materials that can be used for each insulating film include acrylic, epoxy, etc. In addition to resins and resins containing siloxane bonds (e.g., silicone resins), silicon oxide and acids Inorganic insulating materials such as silicon nitride, silicon oxide nitride, silicon nitride, and aluminum oxide You can also use a fee.

[0185] Furthermore, it is preferable that the light-emitting element is provided between a pair of insulating films with low water permeability. This prevents impurities such as water from entering the light-emitting elements, thus reducing the reliability of the device. It can be suppressed.

[0186] Examples of insulating films with low water permeability include silicon nitride films and silicon nitride oxide films, which contain nitrogen and silicon. Examples include films containing nitrogen and aluminum, such as aluminum nitride films. Silicon oxide films, silicon oxide nitride films, aluminum oxide films, etc., may also be used.

[0187] For example, the amount of water vapor transmitted through a low-permeability insulating film is 1 × 10⁻⁶ -5 [g / (m 2 ·day) ] Preferably 1 × 10 -6 [g / (m 2 ·day)] Below, more preferably 1×1 0 -7 [g / (m 2 (day) More preferably 1 x 10 -8 [g / (m 2 ·d (ay) and below.

[0188] Furthermore, the protective film shown in Embodiment 1 can be appropriately used as an insulating film included in the display device. ru.

[0189] <hibi> As the light-emitting element, a self-emitting element can be used, and it will light up when current or voltage is applied. This category includes elements whose degree of operation is controlled. For example, LEDs (Light Emitting Devices) Organic EL elements, inorganic EL elements, etc., can be used.

[0190] Light-emitting devices include top-emission type, bottom-emission type, and dual-emission type. These are some examples. A conductive film that transmits visible light is used for the electrode that extracts light. It is preferable to use a conductive film that reflects visible light on the electrode that is not removed.

[0191] The EL layer has at least an emissive layer. The EL layer has layers other than the emissive layer, such as hole injection layers. High-performance materials, materials with high hole transport, hole-blocking materials, materials with high electron transport, electron injection This includes substances with high electron transport and hole transport properties, or bipolar substances (substances with high electron transport and hole transport properties), etc. It may have further layers.

[0192] The EL layer can use either low-molecular-weight compounds or high-molecular-weight compounds, and inorganic compounds It may contain materials. Each layer constituting the EL layer is made by a vapor deposition method (including vacuum deposition). It can be formed by methods such as transfer, printing, inkjet, and coating.

[0193] When a voltage higher than the threshold voltage of the light-emitting element is applied between the cathode and anode, the EL layer on the anode side... Holes are injected from the cathode side, and electrons are injected from the cathode side. The injected electrons and holes are in the EL layer. They recombine, and the light-emitting material contained in the EL layer emits light.

[0194] When using a white light-emitting element as the light-emitting element, two or more types of light-emitting elements are used in the EL layer. It is preferable to have a composition that includes substances. For example, the emission of light from two or more light-emitting substances is related to the complementary color White light emission can be obtained by selecting a light-emitting material that acts in conjunction with the light-emitting material. For example, These are light-emitting substances that exhibit light emission in the following colors: R (red), G (green), B (blue), Y (yellow), O (orange), etc. Or, among luminescent materials that exhibit emission containing two or more spectral components of R, G, and B, It is preferable that it contains 2 or more. Also, the spectrum of emission from the light-emitting element is in the visible light region. A light-emitting element having two or more peaks within a wavelength range (e.g., 350 nm to 750 nm) It is preferable to apply it. Also, the emission spectrum of a material having a peak in the yellow wavelength region. Preferably, the material has spectral components in the green and red wavelength regions.

[0195] The EL layer includes an emissive layer containing an emissive material that emits one color, and an emissive material that emits another color. It is preferable to have a structure in which multiple light-emitting layers are stacked. For example, multiple light-emitting layers in the EL layer The layers may be stacked in contact with each other, or they may be separated by regions that do not contain any light-emitting material. They may be laminated. For example, between the fluorescent emitting layer and the phosphorescent emitting layer, the fluorescent emitting layer or It contains the same material as the phosphorescent layer (e.g., host material, assist material), and either emission The configuration may also include a region that does not contain any optical material. This makes it easier to fabricate the light-emitting element. Furthermore, the drive voltage is reduced.

[0196] Furthermore, the light-emitting element may be a single element having one EL layer, or it may have multiple EL layers These may be tandem elements stacked with charge generation layers in between.

[0197] Examples of conductive films that transmit visible light include indium oxide, indium tin oxide, and indium It can be formed using zinc oxide, zinc oxide, or zinc oxide with added gallium. Also, gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum Metal materials such as iron, cobalt, copper, palladium, or titanium, and materials containing these metal materials. Alloys, or nitrides of these metallic materials (e.g., titanium nitride), etc., are also translucent to a certain extent. It can be used by forming it into a thin layer. Furthermore, the laminated film of the above material can be used as a conductive film. This is possible. For example, by using a multilayer film of a silver-magnesium alloy and indium tin oxide. It is preferable to include this because it can improve conductivity. Alternatively, graphene or the like may be used. .

[0198] Conductive films that reflect visible light include, for example, aluminum, gold, platinum, silver, nickel, and tungsten. Metal materials such as stainless steel, chromium, molybdenum, iron, cobalt, copper, or palladium, Alloys containing these metal materials can be used. In addition, the above metal materials and alloys can be treated with ran It may also contain additives such as tungsten, neodymium, or germanium. Additionally, titanium and nickel may be added. Alternatively, an alloy containing neodymium and aluminum (aluminum alloy) may be used. An alloy containing copper, palladium, magnesium, and silver may also be used. An alloy containing silver and copper is Furthermore, it is preferable because it has high heat resistance. By laminating a metal film or metal oxide film, oxidation can be suppressed. Examples of materials for metal films and metal oxide films include titanium and titanium oxide. A conductive film that transmits visible light and a film made of a metal material may be laminated together. For example, silver and an ink Multilayer films of zinc-tin oxide, multilayer films of silver-magnesium alloy and indium-tin oxide, etc. It can be used.

[0199] The electrodes can be formed using methods such as vapor deposition or sputtering. Shapes are formed using ejection methods such as inkjet, printing methods such as screen printing, or plating methods. It is possible.

[0200] Furthermore, the above-mentioned light-emitting layer, as well as materials with high hole injection potential, materials with high hole transport potential, and electricity Layers containing materials with high electron transport properties, materials with high electron injection properties, bipolar materials, etc. These include inorganic compounds such as quantum dots, and polymer compounds (oligomers, dendrimers, poly It may have (such as a mer). For example, by using quantum dots as the light-emitting layer, the light-emitting material and It can also be made to function in that way.

[0201] Furthermore, quantum dot materials include colloidal quantum dot materials, alloy-type quantum dot materials, Core-shell type quantum dot materials, core-type quantum dot materials, etc., can be used. Materials containing elemental groups 12 and 16, 13 and 15, or 14 and 16 May be used. Alternatively, cadmium, selenium, zinc, sulfur, phosphorus, indium, tellurium, Quantum dot materials containing elements such as lead, gallium, arsenic, and aluminum may also be used.

[0202] <Adhesive> Adhesives include UV-curing adhesives, reaction-curing adhesives, and thermosetting adhesives. Various types of curing adhesives, such as anaerobic adhesives, can be used. Epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imi Plastic resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, E Examples include VA (ethylene vinyl acetate) resin. In particular, the moisture permeability of epoxy resins, etc. Materials with low properties are preferred. A two-part resin mixture may also be used. Furthermore, adhesive sheets, etc. You may use it.

[0203] Furthermore, the above resin may contain a desiccant. For example, an alkaline earth metal oxide (acid Using substances that adsorb moisture by chemical adsorption, such as calcium carbonate or barium oxide. It is possible to remove moisture through physical adsorption, such as with zeolite or silica gel. Adsorbent substances may be used. If a desiccant is included, impurities such as moisture may penetrate the element. This is preferable because it can suppress the process and improve the reliability of the display device.

[0204] Furthermore, by mixing a filler or light scattering material with a high refractive index into the above resin, light can be extracted. This can improve efficiency. For example, titanium dioxide, barium oxide, zeolite, and Aquatic plants such as ruconium can be used.

[0205] <Connecting component> As a connecting material, an anisotropic conductive film (ACF) is used. (active film) and anisotropic conductive paste (ACP: Anisotropic You can use methods such as Conductive Paste.

[0206] <Colored film> Materials that can be used for colored films include metal materials, resin materials, pigments, or dyes. Examples include resin materials.

[0207] <Light-blocking film> Materials that can be used as light-shielding films include carbon black, titanium black, Examples include metals, metal oxides, and composite oxides containing solid solutions of multiple metal oxides. This may be a film containing a resin material, or a thin film of an inorganic material such as a metal. Furthermore, a laminated film containing the material for the colored film can be used as the light-shielding film. For example, a film of a certain color A film containing materials used for a light-transmitting colored film, and materials used for a colored film that transmits light of other colors. A laminated structure with a film containing can be used. By using the same material for the colored film and the light-shielding film, This is preferable because it allows for the standardization of equipment and simplifies the process.

[0208] The above is a description of each component.

[0209] <Manufacturing method> This section describes an example of a method for manufacturing a display device using a flexible substrate.

[0210] This section covers display elements, circuits, wiring, electrodes, optical components such as colored films and light-shielding films, and insulating films. Layers containing such elements will be collectively referred to as element layers. For example, an element layer includes display elements, In addition to the display elements, there are also the wiring that electrically connects to the display elements, and transistors used in pixels and circuits. It may also be equipped with such elements.

[0211] Furthermore, at the stage when the display element is completed (the manufacturing process is finished), the element layer is A supporting and flexible component will be called a substrate. For example, a substrate has a thickness This also includes extremely thin films, etc., with a thickness of 10 nm to 300 μm.

[0212] Typical methods for forming an element layer on a substrate that is flexible and has an insulating surface include There are two methods, as listed below. One is to form the element layer directly on the substrate. Another method involves forming an element layer on a support substrate different from the substrate, and then peeling the element layer from the support substrate. This is a method of transferring the element layer onto the substrate. Although not explained in detail here, the two above... In addition to the above method, an element layer is formed on a non-flexible substrate, and the substrate is thinned by polishing or the like. Another method is to make it flexible by doing so.

[0213] If the materials constituting the substrate have heat resistance to the heat generated during the device layer formation process, Forming the element layer directly on the substrate is preferable because it simplifies the process. When the element layer is formed with the plate fixed to the support substrate, transport within and between devices is It is preferable because it makes things easier.

[0214] Furthermore, when using a method in which the element layer is formed on a support substrate and then transferred to a substrate, first the support A release film and an insulating film are laminated onto a substrate, and an element layer is formed on the insulating film. Subsequently, a support base The material and the element layer are separated, and the element layer is transferred to the substrate. At this time, the interface between the support substrate and the peeled film Therefore, a material should be selected that causes delamination at the interface between the release film and the insulating film, or within the release film itself. In this method, the element layer is formed by using heat-resistant materials for the support substrate and the release film. This allows for an increase in the upper limit of the temperature applied during the process, resulting in the formation of an element layer with more reliable components. This is preferable because it allows for this.

[0215] For example, as a release film, a film containing a high melting point metal material such as tungsten, and the metal material A film containing oxides is used in a laminated manner, and silicon oxide and silicon nitride are used as insulating films on the exfoliated film. It is preferable to use a film made by laminating multiple layers of silicon oxide nitride, silicon nitride oxide, etc. In this specification, oxidnitrides are defined as having a composition in which the oxygen content is greater than the nitrogen content. The term refers to materials with a high nitrogen content, and nitride oxides are materials whose composition contains more nitrogen than oxygen. To point.

[0216] Methods for separating the element layer from the support substrate include applying mechanical force and removing the peeling film. Examples include chipping or penetrating the peeling interface with a liquid. Alternatively, the difference in thermal expansion coefficients between the two layers forming the delamination interface can be used for heating or cooling. The peeling may be performed by this method.

[0217] Furthermore, if peeling is possible at the interface between the support substrate and the insulating film, it is not necessary to provide a peeling film.

[0218] For example, glass is used as the support substrate and an organic resin such as polyimide is used as the insulating film. This can be done by locally heating a portion of the organic resin using a laser beam or the like. Alternatively, the organic resin may peel off due to physical cutting or piercing of a portion of it by a sharp object. A starting point may be formed, and delamination may be performed at the interface between the glass and the organic resin.

[0219] Alternatively, a heating element is provided between the support substrate and an insulating film made of organic resin, and the heating element is added By heating, delamination may occur at the interface between the heating element and the insulating film. These include materials that generate heat when an electric current is passed through them, materials that generate heat when light is absorbed, and materials that generate heat when a magnetic field is passed through them. Various materials can be used, such as materials that generate heat when applied. For example, the heat-generating part The material can be selected from semiconductors, metals, and insulators.

[0220] In the method described above, the insulating film made of organic resin is used as a substrate after peeling. It is possible.

[0221] The above is a description of the method for manufacturing a flexible display device.

[0222] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0223] (Embodiment 4) In this embodiment, a hybrid display is an example of a display device according to one aspect of the present invention. I will explain this.

[0224] Furthermore, a hybrid display method is a method of displaying multiple lights in the same pixel or the same sub-pixel. A method of displaying text and / or images. A hybrid display is a method of displaying text and / or images. Multiple lights are displayed in the same pixel or the same sub-pixel within the display unit, and characters or / or images are displayed. This is a collection of elements that display [something].

[0225] One example of a hybrid display method is to use the first light and the second light in the same pixel or the same sub-pixel. There is a method of displaying by changing the timing of the second light display. In this case, the same pixel or Within the same subpixel, the same hue (red, green, or blue, or cyan, magenta, or yellow) The first light and the second light of either of the Rhodes are displayed simultaneously, and characters or / And images can be displayed.

[0226] Another example of a hybrid display method is using reflected light and self-illuminated light on the same pixel or the same sub-pixel. There are methods of displaying using pixels. Reflected light and self-emissive light of the same color tone (for example, OLED (Organic) nic Light Emitting Diode (light, LED light, etc.) These can be displayed simultaneously using the same subpixel.

[0227] In the hybrid display method, instead of the same pixel or the same sub-pixel, adjacent pixels... Multiple lights may be displayed in a primary or adjacent sub-pixel. Also, the first light and the second Displaying light simultaneously means displaying a first light and a second light in such a way that the human eye does not perceive flicker. This refers to displaying the same light for the same period of time, and if no flickering is perceived by the human eye, the first The display period of the first light and the display period of the second light may be out of sync.

[0228] Furthermore, hybrid displays can display multiple displays in the same pixel or the same sub-pixel. It is an assembly having display elements, where each of the multiple display elements displays during the same period. A hybrid display has multiple display elements in the same pixel or the same sub-pixel, and It has an active element that drives the indicator element. The active element may be a switch, a transistor, or a thin film. There are transistors, etc. Since active elements are connected to each of the multiple display elements, multiple Each display element can be controlled individually.

[0229] Furthermore, in this specification, etc., any expression that satisfies any one or more of the above configurations is considered to be: It's called a hybrid display.

[0230] Furthermore, a hybrid display has multiple display elements in the same pixel or the same sub-pixel. The multiple display elements include, for example, a reflective element that reflects light and an element that emits light. Self-emitting elements are one example. Note that reflective elements and self-emitting elements are controlled independently. It is possible. The hybrid display uses reflected light and self-emissive light in its display section. It has the function of displaying text and / or images using either one or both of the following:

[0231] A display device according to one aspect of the present invention has a pixel provided with a first display element that reflects visible light. It is possible to have a pixel that is provided with a second display element that emits visible light. This is possible. Alternatively, it is possible to have a pixel on which a first display element and a second display element are provided. Cut.

[0232] In this embodiment, there is a first display element that reflects visible light and a second display element that emits visible light. A display device having a child will be described.

[0233] The display device uses a first light reflected by a first display element and a second light emitted by a second display element. It has the function of displaying an image using either one or both of the following: or a display device. This is the amount of light from the first light reflected by the first display element and the amount of light from the second light emitted by the second display element. It has the function of expressing gradation by controlling the quantity and respectively.

[0234] Furthermore, the display device expresses gradation by controlling the amount of light reflected from the first display element. Tone gradation is expressed by controlling the amount of light emitted from the first pixel and the second display element. It is preferable to have a configuration that includes a second pixel. The first pixel and the second pixel are, for example, Multiple units are arranged in a matrix-like configuration, forming the display unit.

[0235] Furthermore, the first and second pixels are arranged within the display area in equal numbers and with the same pitch. This is preferable. At this time, adjacent first pixels and second pixels are combined to form a pixel unit. This can be called [a specific term]. As a result, an image displayed using only multiple first pixels can be [another specific term]. The image, an image displayed with only a plurality of second pixels, and a plurality of first pixels and a plurality of second pixels. Each of the images displayed on both pixels can be displayed in the same display area.

[0236] The first display element of the first pixel may use an element that reflects ambient light for display. Yes, it is possible. Because such elements do not have a light source, they can consume extremely little power during display. This becomes possible.

[0237] Typically, a reflective liquid crystal element can be used as the first display element. Or, the first As a display element, a shutter-type MEMS (Micro Electro Mech) is used. (Anical Systems) elements, optical interference MEMS elements, and microcapsules Methods include electrophoresis, electrowetting, and electronic powder fluid (registered trademark) methods. Elements to which this technology is applied can be used.

[0238] The second display element of the second pixel has a light source and uses the light from that light source to display. An element can be used that emits light from a light-emitting material by applying an electric field. It is preferable to use an electroluminescent element that can be extracted. Such a pixel emits Because the brightness and chromaticity of this light are not affected by ambient light, it has high color reproduction (wide color gamut). Furthermore, it can display images with high contrast, that is, vivid images.

[0239] The second display element could be, for example, an OLED or an LED (Light Emitting Diode). ode), QLED(Quantum-dot Light Emitting Dio) Alternatively, a self-luminous light-emitting element such as a semiconductor laser can be used. The elements that make up the display include a backlight, which is the light source, and transmitted light from the backlight. A system combining a transmissive liquid crystal element that controls the amount of light can also be used.

[0240] The first pixel may be a subpixel exhibiting, for example, white (W), or, for example, red (R), green (G). It can be configured to have sub-pixels that emit blue (B) light, respectively. Similarly, the second pixel may be a subpixel exhibiting, for example, white (W), or red (R), green, etc. The configuration can have subpixels that emit light of three colors: (G), blue (B), and blue (G). Furthermore, the subpixels of the first and second pixels may be four or more colors. The more types of subpixels there are, the lower the power consumption can be, and the better the color reproduction can be. It is possible.

[0241] One aspect of the present invention is a first mode in which an image is displayed in a first pixel, and a second mode in which an image is displayed in a second pixel. The second mode shown, and the third mode which displays the image using the first and second pixels are turned off. They can be replaced. Also, different image signals can be sent to the first pixel and the second pixel, respectively. You can also input data and display a composite image.

[0242] The first mode is a mode in which an image is displayed using reflected light from the first display element. The first mode does not require a light source, making it an extremely low-power driving mode. For example, This is effective when the ambient light intensity is sufficiently high and the ambient light is white light or light of a similar nature. Mode 1 is a display mode suitable for displaying text information, such as that found in books or documents. Furthermore, because it uses reflected light, it can display images that are easy on the eyes and reduce eye strain. It is effective.

[0243] The second mode is a mode in which an image is displayed using light emitted by a second display element. Therefore, regardless of the illuminance and chromaticity of the ambient light, it is extremely vivid (high contrast and color). It can display (highly reproducible) images. For example, at night or in a dark room, when the ambient light level is extremely low. It is particularly effective when the screen is small. Also, when the ambient light is dim, a bright display can help the user... It can sometimes feel too bright. To prevent this, the second mode reduces the brightness of the display. It is preferable to do this. In addition, this reduces glare and also reduces power consumption. It is possible to do so. The second mode is to display vivid images and smooth videos, etc. This is the appropriate mode.

[0244] In the third mode, both reflected light from the first display element and light emitted from the second display element are used. This is a mode that uses the light emitted by the first pixel and the first pixel By mixing the light emitted by the first and second adjacent pixels, a single color is represented. It works. It provides a brighter display than the first mode while consuming less power than the second mode. This is possible. For example, under indoor lighting, or during the morning or evening hours when the illuminance of the outside light is relatively low. This is effective when the color temperature is low or when the ambient light is not white.

[0245] In the following, a more specific example of one aspect of the present invention will be described with reference to the drawings.

[0246] [Example of a display device configuration]

[0247] Figure 9 is a diagram illustrating the display area 70 of a display device according to one aspect of the present invention. Region 70 has a plurality of pixel units 75 arranged in a matrix. Pixel unit 7 5 has pixel 76 and pixel 77.

[0248] In Figure 9, pixels 76 and 77 are red (R), green (G), and blue (B), respectively. This shows an example of a display element that supports three colors.

[0249] Pixel 76 corresponds to display element 76R for red (R) and display element 7 for green (G). It has a display element 76B that corresponds to 6G and blue (B). Display elements 76R, 76G, 76B These are each second display elements that utilize light from a light source.

[0250] Pixel 77 corresponds to display element 77R for red (R) and display element 7 for green (G). It has a display element 77B that corresponds to 7G and blue (B). Display elements 77R, 77G, 77B These are each first display elements that utilize the reflection of ambient light.

[0251] The above is a description of an example of a display device configuration.

[0252] [Example of pixel unit configuration] Next, the pixel unit 75 will be explained using Figures 10(A), (B), and (C). Figures 10(A), (B), and (C) are schematic diagrams showing examples of the configuration of the pixel unit 75.

[0253] Pixel 76 has display element 76R, display element 76G, and display element 76B. 6R has a light source and corresponds to the red color included in the second grayscale value input to pixel 76. A red light R2 with brightness corresponding to the value is emitted towards the display surface. Display element 76G, display element 76 Similarly, B emits either green light G2 or blue light B2 towards the display surface.

[0254] Pixel 77 has display element 77R, display element 77G, and display element 77B. 7R reflects ambient light and corresponds to the red color included in the first grayscale value input to pixel 77. A red light R1 with brightness corresponding to the adjustment value is emitted towards the display surface. Display element 77G, display element 7 Similarly, 7B emits either green light G1 or blue light B1 towards the display surface.

[0255] [First Mode] Figure 10(A) shows the display elements 77R, 77G, and 77B that reflect ambient light. This shows an example of an operating mode in which the image is driven and displayed. As shown in Figure 10(A), pixels Unit 75, for example, when the ambient light intensity is sufficiently high, does not drive the pixels 76. By mixing only the light from pixel 77 (light R1, light G1, and light B1), It is also possible to emit light 79 of a fixed color towards the display surface. This enables extremely low power consumption. It is possible to perform actions.

[0256] [Second Mode] Figure 10(B) shows the display elements 76R, 76G, and 76B being driven to display an image. An example of the display operation mode is shown. As shown in Figure 10(B), the pixel unit 75 For example, when the ambient light intensity is extremely low, pixel 77 is not driven, and pixel 76 or By mixing only these lights (light R2, light G2, and light B2), a predetermined color of light 7 It is also possible to project 9 onto the display surface. This allows for a vivid display. Furthermore, by lowering the brightness when the ambient light intensity is low, the glare perceived by the user can be reduced. Both can reduce power consumption.

[0257] [Third Mode] Figure 10(C) shows the display elements 77R, 77G, and 77B that reflect ambient light. The light-emitting display elements 76R, 76G, and 76B are all driven to display an image. An example of the display operation mode is shown. As shown in Figure 10(C), the pixel unit 75 By mixing six lights, light R1, light G1, light B1, light R2, light G2, and light B2... This allows light 79 of a predetermined color to be emitted towards the display surface.

[0258] Therefore, the display device shown in this embodiment includes a light-emitting display element and a reflective display element. Because it has the above characteristics, it is suitable for displaying a selected area. For example, a reflective display element When displaying in display area 70, the light-emitting display element displays the selected area. This is possible. Also, when displaying a display area of ​​70 with an emissive display element, a reflective type The selected area may be displayed using a display element. Alternatively, the grayscale data of a reflective display element may be changed. By changing the settings, the selected area may be displayed, or the gradation data of the light-emitting display element may be changed. You can also display the selected area using .

[0259] The above is a description of an example configuration of the pixel unit 75.

[0260] Next, we will explain specific examples of hybrid display configurations. The following table illustrates this. The display device has both a reflective liquid crystal element and a light-emitting element, and can operate in both transmission and reflection modes. This is a display device capable of showing [something].

[0261] [Example Configuration] Figure 11(A) is a block diagram showing an example of the configuration of the display device 400. 0 has multiple pixels 410 arranged in a matrix on the display unit 761b. The device 400 has circuit GD and circuit SD. It also has a plurality of pixels 41 arranged in direction R. 0, multiple wires GD1, multiple wires GD2, and multiple wires AN that are electrically connected to circuit GD. O, and has multiple wiring CSCOM. Also, multiple pixels 410 arranged in direction C, It has multiple wirings S1 and multiple wirings S2 that are electrically connected to the circuit SD.

[0262] For simplicity, the configuration shown here has one circuit GD and one circuit SD, but the liquid Circuits GD and SD for driving the crystal element, and circuits GD and SD for driving the light-emitting element They may be provided separately.

[0263] Pixel 410 has a reflective liquid crystal element and a light-emitting element. In pixel 410, the liquid crystal element The child and the light-emitting element have overlapping portions.

[0264] Figure 11(B1) shows an example of the configuration of the conductive film 311b on pixel 410. Conductive film 311 b functions as a reflective electrode of the liquid crystal element in pixel 410. Also, the conductive film 311b An opening 451 is provided.

[0265] Figure 11(B1) shows the light-emitting element 360 located in the region overlapping with the conductive film 311b, indicated by a dashed line. This shows that the light-emitting element 360 is positioned in overlap with the opening 451 of the conductive film 311b. Therefore, the light emitted by the light-emitting element 360 is emitted towards the display surface side through the aperture 451. It can be done.

[0266] In Figure 11(B1), the pixels 410 adjacent to each other in direction R are pixels corresponding to different colors. At this time, as shown in Figure 11(B1), in two pixels adjacent to each other in direction R, aperture 4 The 51s are provided at different positions on the conductive film 311b so that they are not arranged in a single line. This is preferable. This makes it possible to separate the two light-emitting elements 360, and the light-emitting elements 360 emit light. This phenomenon (also called light leakage) occurs when light enters the colored film of an adjacent pixel 410. It can be suppressed. Also, two adjacent light-emitting elements 360 can be placed far apart. Therefore, even when the EL layer of the light-emitting element 360 is made differently using a shielding mask or the like, This enables the creation of highly detailed display devices.

[0267] Alternatively, the arrangement shown in Figure 11(B2) may also be used.

[0268] If the ratio of the total area of ​​the aperture 451 to the total area of ​​the non-apertures is too large, the liquid crystal elements will not be used. The display becomes dim. Also, the ratio of the total area of ​​the opening 451 to the total area of ​​the non-openings. If the value is too small, the display using the light-emitting element 360 will become dim.

[0269] Furthermore, the area of ​​the opening 451 provided in the conductive film 311b, which functions as a reflective electrode, is too small. This reduces the efficiency of the light that can be extracted from the light emitted by the light-emitting element 360.

[0270] The shape of the opening 451 may be, for example, a polygon, a square, an ellipse, a circle, or a cross. This can be done. It may also be in the shape of a long, narrow stripe, slit, or checkerboard pattern. The aperture 451 may be positioned close to an adjacent pixel. Preferably, the aperture 451 represents the same color. It is positioned close to the other pixels it indicates. This helps to suppress light leakage.

[0271] [Circuit Configuration Example] Figure 12 is a circuit diagram showing an example configuration of pixel 410. In Figure 12, two adjacent pixels This shows 410. The difference from Figure 9 is that image data is written to the capacitive element of the pixel circuit. This shows an example with wiring S1 and wiring S2.

[0272] Pixel 410 consists of switch SW1, capacitive element C1, liquid crystal element 340, switch SW2, and It has a transistor M, a capacitive element C2, and a light-emitting element 360, etc. Furthermore, the pixel 410 has Wiring GD1, Wiring GD3, Wiring ANO, Wiring CSCOM, Wiring S1, and Wiring S2 are electrical They are connected precisely. Also, in Figure 12, the wiring VCO that electrically connects to the liquid crystal element 340. This shows M1 and the wiring VCOM2 which is electrically connected to the light-emitting element 360.

[0273] Figure 12 shows an example where transistors are used for switches SW1 and SW2. It is showing.

[0274] Switch SW1 has its gate connected to wiring GD3, and either the source or drain is connected to wiring Connected to S1, with the source or drain being one electrode of the capacitive element C1, and the liquid crystal element It is connected to one electrode of 340. The capacitive element C1 is connected to the other electrode of wiring CSCOM. They are connected. The other electrode of the liquid crystal element 340 is connected to the wiring VCOM1.

[0275] Furthermore, switch SW2 has its gate connected to wiring GD1, and either the source or the drain is connected. The wire S2 is connected to the other side of the source or drain, and one electrode of the capacitive element C2 is connected to the trap. It is connected to the gate of the inverter M. The capacitive element C2 has its other electrode connected to the wiring CSCOM. They are connected. Transistor M has either its source or drain connected to one of the light-emitting elements 360. It is connected to the electrode of the light-emitting element 360, with the other electrode connected to the wiring VCOM2. Yes, they are.

[0276] In Figure 12, transistor M has two gates sandwiching a semiconductor, and these are connected. This shows an example where the current that transistor M can supply is increased. It is possible.

[0277] Wiring GD3 is used to provide a signal that controls switch SW1 to either a conductive or non-conductive state. This is possible. A predetermined potential can be applied to the wiring VCOM1. A liquid can be applied to the wiring S1. A signal can be provided to control the orientation state of the liquid crystal in the crystal element 340. (Wiring CSC) A predetermined potential can be applied to the OM.

[0278] Wiring GD1 is used to provide a signal that controls switch SW2 to either a conductive or non-conductive state. This is possible. A potential difference is generated between wiring VCOM2 and wiring ANO, causing the light-emitting element 360 to emit light. The potentials can be applied to each. Wiring S2 controls the conduction state of transistor M. It can provide signals to control the situation.

[0279] Pixel 410 shown in Figure 12, for example, when displaying in reflection mode, is connected to wiring GD3 and It is driven by the signal supplied to the wiring S1 and displays using optical modulation by the liquid crystal element 340. This is possible. Also, when displaying in transparent mode, the wiring GD1 and wiring S2 are supplied It can be driven by a signal and illuminate the light-emitting element 360 to display information. Also, both When driven in this mode, each of the wirings GD1, GD3, S1 and S2 It can be driven by the signal it receives.

[0280] In Figure 12, one pixel 410 contains one liquid crystal element 340 and one light-emitting element 360. An example with such a feature has been shown, but it is not limited to this. Figure 13(A) shows one pixel 410. The liquid crystal element 340 and four light-emitting elements 360 (light-emitting elements 360r, 360g, 360b, 3 This shows an example with 60 watts.

[0281] In Figure 13(A), in addition to the example in Figure 12, wiring GD4 and wiring S3 are connected to pixel 410. It is being done.

[0282] In the example shown in Figure 13(A), for example, there are four light-emitting elements 360r, 360g, and light-emitting elements. The element 360b and the light-emitting element 360w are colored red (R), green (G), and blue (B), respectively. A light-emitting element that exhibits white (W) light can be used. Also, as the liquid crystal element 340 A reflective liquid crystal element that exhibits white light can be used. This allows for the display of reflective mode. When performing this task, a highly reflective white display can be used. Additionally, display in transmissive mode is also possible. When performing this task, it is possible to display a high color rendering index with low power consumption.

[0283] Figure 13(B) also shows an example of the configuration of pixel 410. Pixel 410 is connected to electrode 31 A light-emitting element 360w overlapping with the opening of 1, and light-emitting elements arranged around the electrode 311. It has 360r, light-emitting element 360g, and light-emitting element 360b. Light-emitting element 360r, It is preferable that the light-emitting element 360g and the light-emitting element 360b have approximately the same light-emitting area.

[0284] [Example of display panel configuration] Figure 14 is a schematic perspective view of a display device 300 according to one embodiment of the present invention. The appearance is the same as that of the display device 710 shown in Figure 4.

[0285] Figure 14 shows a magnified view of a part of the display unit 761b. The display unit 761b has multiple The conductive film 311b of the display element is arranged in a matrix. It has the function of reflecting visible light and functions as a reflective electrode for the liquid crystal element 340, which will be described later.

[0286] Furthermore, as shown in Figure 14, the conductive film 311b has an opening. The substrate 751a side has a light-emitting element 360. Light from the light-emitting element 360 is directed to the conductive film 3 It is injected towards the substrate 752a side through the opening in 11b.

[0287] Furthermore, an input device 366 can be provided on the substrate 752a. For example, a sheet-like input device. Alternatively, a capacitive touch sensor can be mounted on top of the display unit 761b. A touch sensor may be provided between substrate 752a and substrate 751a. If a touch sensor is to be installed between 751a and the other element, in addition to a capacitive touch sensor, an optical touch sensor may also be used. An optical touch sensor using an electrical conversion element may also be applied.

[0288] [Cross-sectional configuration example 1] Figure 15 shows a portion of the display device illustrated in Figure 14, including the FPC763a, and the circuit section 7. When a portion of the area including 62a and a portion of the area including the display unit 761b are cut off, An example of a cross-section is shown.

[0289] The display device has an insulating film 220 between substrate 751a and substrate 752a. Between 751a and the insulating film 220 are the light-emitting element 360, transistor 201, and transistor 2 It has 05, transistor 206, colored film 174, etc. Also, insulating film 220 and substrate 752 Between a, there is a liquid crystal element 340, a colored film 175, etc. Also, substrate 752a and insulating film 22 0 is bonded via adhesive 183, and substrate 751a and insulating film 220 are bonded via adhesive 182 It is glued in place.

[0290] Transistor 206 is electrically connected to the liquid crystal element 340, and transistor 205 is generated It is electrically connected to the optical element 360. Transistors 205 and 206 are either Since these are also formed on the substrate 751a side surface of the insulating film 220, the same process is used for these. It can be made by doing so.

[0291] The substrate 752a has a colored film 175, a light-shielding film 176, an insulating film 165, and a liquid crystal element 340. A conductive film 313, an alignment film 173b, an insulating film 167, etc., which function as a common electrode are provided. The insulating film 167 is used as a spacer to maintain the cell gap of the liquid crystal element 340. It works.

[0292] On the substrate 751a side of the insulating film 220, there are insulating films 211, 212, 213, and An insulating film such as a border film 214 and an insulating film 215 is provided. A part of the insulating film 211 is It functions as a gate insulating film for the transistor. Insulating film 212, insulating film 213, and insulating film 214 is provided covering each transistor. Also, the insulating film 214 is covered by the insulating film A 215 is provided. The insulating film 214 and insulating film 215 have the function of planarization films. Here, insulating film 212 and insulating film 213 are used as insulating films to cover transistors, etc. The example shown has three layers of insulating film 214, but is not limited to this and can have four or more layers. It may be a single layer or two layers. Also, insulating film 2 that functions as a planarizing film Item 14 can be omitted if it is not needed.

[0293] Furthermore, transistors 201, 205, and 206 are partially A conductive film 221 that functions as a gate, and a conductive film 2 that partially functions as a source or drain. 22. It has a semiconductor film 231. Here, multiple layers obtained by processing the same conductive film are They all feature the same hatching pattern.

[0294] The liquid crystal element 340 is a reflective liquid crystal element. The liquid crystal element 340 consists of a conductive film 370 and liquid crystal 3 12. It has a laminated structure in which conductive films 313 are stacked. Also, the substrate 751a of the conductive film 370 A conductive film 311b that reflects visible light is provided adjacent to the side. The conductive film 311b has an opening. It has 251. In addition, the conductive film 370 and the conductive film 313 contain a material that transmits visible light. Furthermore, an alignment film 173a is provided between the liquid crystal 312 and the conductive film 370, and the liquid crystal 312 and the conductive film An alignment film 173b is provided between the 313.

[0295] A light diffusing plate 129 and a polarizing plate 140 are placed on the outer surface of the substrate 752a. Polarizing plate 1 For 40, a linear polarizer may be used, but a circular polarizer can also be used. For example, a device consisting of a linear polarizing plate and a quarter-wavelength phase difference plate laminated together can be used. This allows for the suppression of external light reflection. In addition, light diffusion is used to suppress external light reflection. A plate 129 is provided. Also, depending on the type of polarizing plate, the liquid crystal element used in the liquid crystal element 340 By adjusting the cell gap, orientation, drive voltage, etc., the desired contrast can be achieved. That's how you should do it.

[0296] In the liquid crystal element 340, the conductive film 311b has the function of reflecting visible light, and the conductive film 31 3 has the function of transmitting visible light. Light incident from the substrate 752a side reaches the polarizing plate 140. It is further polarized, passes through the conductive film 313 and liquid crystal 312, and is reflected by the conductive film 311b. The liquid crystal 312 and conductive film 313 are then passed through again, reaching the polarizing plate 140. At this time, the conductive The orientation of the liquid crystal 312 is controlled by the voltage applied between the film 311b and the conductive film 313, and light The modulation can be controlled. That is, the intensity of the light emitted through the polarizing plate 140 can be controlled. It can be controlled. Also, light outside of a specific wavelength range is absorbed by the colored film 175. As a result, the extracted light will, for example, be red in color.

[0297] The light-emitting element 360 is a bottom-emission type light-emitting element. The light-emitting element 360 is an insulating The laminate is stacked in the following order from the film 220 side: conductive film 191, EL layer 192, and conductive film 193b. It has a structure. Furthermore, a conductive film 193a is provided covering the conductive film 193b. Conductive film 193b contains a material that reflects visible light, and conductive films 191 and 193a transmit visible light. Includes materials that pass through. The light emitted by the light-emitting element 360 is transmitted through the colored film 174, insulating film 220, aperture 2 51. It is injected towards the substrate 752a side via the conductive film 313, etc.

[0298] A protective film 228 is provided on the conductive film 193a and insulating film 216 contained in the light-emitting element 360. The protective film 228 can be the protective film 28 shown in Embodiment 1. The protective film 228 is provided on the optical element 360, which prevents water and acid from reaching the light-emitting element 360 from the outside. This makes it possible to prevent the diffusion of elements and reduce the degradation of the light-emitting element 360. Furthermore, it is possible to manufacture a display device with highly reliable light-emitting elements.

[0299] Furthermore, in the display device shown in Figure 15, the insulating film 213 and the protective film 228 are in contact in region 209. The region 209 is provided in an annular shape around the periphery of the display device, so that the insulating film 213 And a light-emitting element 360 is provided inside the region surrounded by the protective film 228. As a result, display To prevent water, oxygen, etc. from diffusing to the light-emitting element 360 from the top, bottom, and sides of the device. It is possible and preferable.

[0300] Note that Figure 15 shows a structure in which the protective film 228 is in contact with the insulating film 213, but the protective film 228 may be in contact with the insulating film 211 or the insulating film 212.

[0301] Here, as shown in Figure 15, a conductive film 370 that transmits visible light is provided in the aperture 251. It is preferable that this is done so that even in the area overlapping with the opening 251, the other areas Since the liquid crystal 312 aligns in the same way as in the region, liquid crystal alignment defects occur at the boundaries of these regions. This can prevent unintended light leakage.

[0302] An insulating film 217 is provided on the insulating film 216 that covers the edge of the conductive film 191. The film 217 acts as a spacer to prevent the insulating film 220 and the substrate 751a from coming into excessively close proximity. It functions as such. In addition, the EL layer 192 and the conductive film 193a are shielded by a mask (metal mass). When forming using (k), to suppress contact between the shielding mask and the surface to be formed It may also have a function related to [something]. Furthermore, the insulating film 217 may be omitted if it is not needed.

[0303] Either the source or drain of transistor 205 is connected to light-emitting element 3 via the conductive film 224. It is electrically connected to the conductive film 191 of 60.

[0304] One of the sources or drains of transistor 206 is connected to the conductive film 31 via the connector 207. It is electrically connected to 1b. The conductive film 311b and the conductive film 370 are provided in contact with each other. These are electrically connected. Here, the connection part 207 is an opening provided in the insulating film 220 This is the portion that connects the conductive films provided on both sides of the insulating film 220.

[0305] A connecting portion 204 is provided in the area where substrates 751a and 752a do not overlap. The connection part 204 is electrically connected to the FPC763a via the connector 242. Part 204 has the same configuration as the connecting part 207. The upper surface of the connecting part 204 is the conductive film 37 The conductive film obtained by processing the same conductive film as 0 is exposed. As a result, the connection part 204 The FPC763a can be electrically connected via the connector 242.

[0306] A connecting portion 252 is provided in a part of the area where the adhesive 183 is applied. In 52, a conductive film obtained by processing the same conductive film as conductive film 370, and conductive film 313 A portion of it is electrically connected by connector 243. Therefore, on the substrate 752a side The formed conductive film 313 receives input from the FPC 763a connected to the substrate 751a side. A signal or potential can be supplied via the connection part 252.

[0307] For example, conductive particles can be used as the connector 243. For example, a material can be used in which the surface of particles such as organic resin or silica is coated with a metal material. It is possible. Using nickel or gold as the metallic material is preferable because it can reduce contact resistance. Particles coated in layers of two or more metal materials, such as nickel further coated with gold. It is preferable to use a material that is elastically deformable or plastically deformable as the connecting body 243. It is preferable to use it. In this case, the conductive particles, which are the connectors 243, are as shown in Figure 15. In some cases, it may take on a shape that is flattened in the vertical direction. This allows the connector 243 and the electrical The contact area with the conductive film that is connected via gas increases, reducing contact resistance and preventing connection failures. This can suppress the occurrence of malfunctions.

[0308] It is preferable that the connector 243 be positioned so as to be covered with adhesive 183. For example, hard The connector 243 should be dispersed in the adhesive 183 before it is converted to a liquid state.

[0309] Figure 15 shows an example of a circuit section 762a in which a transistor 201 is provided. It is.

[0310] Figure 15 shows examples of transistors 201 and 205, where channels are formed. A configuration is applied in which the semiconductor film 231 to be treated is sandwiched between two gates. One of the gates is Due to the conductive film 221, the other gate overlaps with the semiconductor film 231 via the insulating film 212. It is composed of film 223. With this configuration, the threshold of the transistor The voltage can be controlled. In this case, two gates are connected and the same signal is applied to them. The transistor may be driven by supplying power. Such a transistor may be driven by other transistors. Compared to a conventional inverter, it is possible to increase the field-effect mobility and increase the on-current. This makes it possible to create circuits that can be driven at high speeds. Furthermore, the circuit This makes it possible to reduce the occupied area of ​​the part. By applying transistors with a large on-current... Therefore, even if the number of wires increases when the display device is made larger or higher resolution, each wire This makes it possible to reduce signal delay and suppress display inconsistencies.

[0311] Note that the transistors in the circuit section 762a and the transistors in the display section 761b They may have the same structure. Also, the multiple transistors in circuit section 762a are all They may have the same structure, or transistors with different structures may be combined and used. Furthermore, the multiple transistors in the display unit 761b may all have the same structure. A combination of transistors with different structures may be used.

[0312] At least one of the insulating film 212 and insulating film 213 covering each transistor is protected from water and hydrogen It is preferable to use a material that does not easily allow impurities such as the insulating film 212 or The insulating film 213 can function as a barrier film. With this configuration, This makes it possible to effectively suppress the diffusion of impurities from the outside into the transistor. This enables the creation of highly reliable display devices.

[0313] On the substrate 752a side, an insulating film 165 is provided covering the colored film 175 and the light-shielding film 176. The insulating film 165 may also function as a planarizing film. Therefore, the surface of the conductive film 313 can be made approximately flat, and the orientation state of the liquid crystal 312 can be made uniform. ru.

[0314] [Cross-sectional configuration example 2] The display device shown in Figure 16 has a top-gate type transistor in the configuration shown in Figure 15. This is an example of applying a transistor. Thus, a top-gate type transistor... By applying this, parasitic capacitance can be reduced, thus increasing the display frame rate. It is possible.

[0315] A transistor in a display device according to one aspect of the present invention has a conductive film that functions as a gate electrode. And, a semiconductor film, a conductive film that functions as a source electrode, and a conductive film that functions as a drain electrode. It comprises a film and an insulating film that functions as a gate insulating film.

[0316] Furthermore, the structure of the transistor is not particularly limited. For example, a planar transistor and It may be a staggered transistor, or an inverse staggered transistor. It may also be used as either a top-gate or bottom-gate transistor structure. Alternatively, gate electrodes may be provided above and below the channel.

[0317] A protective film 228 is provided on the conductive film 193a and insulating film 216 contained in the light-emitting element 360. The protective film 228 is in contact with the insulating film 213 in region 230. Region 2 30 is provided in an annular shape around the periphery of the display device, so that the insulating film 213 and protective film 22 A light-emitting element 360 is provided inside the area enclosed by 8. As a result, the top and bottom surfaces of the display device It is possible to prevent water, oxygen, etc. from diffusing to the light-emitting element 360 from the surface and sides, which is preferable. It seems so.

[0318] Note that Figure 16 shows a structure in which the protective film 228 is in contact with the insulating film 213, but the protective film 228 may be in contact with the insulating film 211 or the insulating film 212.

[0319] Note that each component of the display device shown in this embodiment may be replaced with the display device shown in Embodiment 3 as appropriate. The components of this can be used.

[0320] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0321] (Embodiment 5) In this embodiment, a display module that can be manufactured using one aspect of the present invention is provided. I will explain.

[0322] The display module 8000 shown in Figure 17 consists of an upper cover 8001 and a lower cover 8002. In between, the touch panel 8004 connected to the FPC8003 and the FPC8005 are connected. Display panel 8006, frame 8009, printed circuit board 8010, and battery 801 It has 1.

[0323] A display device manufactured using one aspect of the present invention is, for example, used in a display panel 8006. This is possible. A display device manufactured using one aspect of the present invention can be, for example, a display panel 800. By using it in step 6, it is possible to manufacture a high-resolution display module 8000. This can improve the reliability of the display module.

[0324] The upper cover 8001 and the lower cover 8002 are the touch panel 8004 and the display panel. The shape and dimensions can be appropriately modified to match the size of the 8006.

[0325] The touch panel 8004 is a resistive or capacitive touch panel. It can be used superimposed on the panel 8006. Also, without the touch panel 8004, the display It is also possible to add touch panel functionality to the display panel 8006.

[0326] Frame 8009 provides protection for the display panel 8006, as well as the movement of the printed circuit board 8010. It has the function of an electromagnetic shield to block electromagnetic waves generated by the operation. The frame 8009 may also function as a heat sink.

[0327] The printed circuit board 8010 contains power supply circuits and signals for outputting video and clock signals. It has a power processing circuit. The power supply that provides power to the power supply circuit is an external commercial power supply. Alternatively, a separate power source, the battery 8011, may also be used. This can be omitted when using commercial power.

[0328] Furthermore, the display module 8000 includes components such as polarizing plates, phase difference plates, and prism sheets. They may also be provided.

[0329] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0330] (Embodiment 6) This embodiment describes electronic equipment to which a display device according to one aspect of the present invention can be applied. .

[0331] A display device according to one aspect of the present invention can be applied to the display unit of an electronic device. This enables the creation of electronic devices with high display quality, or extremely high-definition electronic devices. Alternatively, it can enable the creation of highly reliable electronic devices.

[0332] Examples of electronic devices include television equipment, desktop or notebook computers, etc. Computer monitors, digital cameras, digital video cameras, etc. Cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, audio players Examples include live-action devices and large-scale game machines such as pachinko machines.

[0333] An electronic device or lighting device according to one aspect of the present invention can be used on the interior or exterior walls of a house or building. Alternatively, it can be incorporated along the curved surfaces of the interior or exterior of a vehicle.

[0334] An electronic device according to one aspect of the present invention may have a secondary battery and uses contactless power transmission. It is preferable that the secondary battery can be recharged.

[0335] Examples of secondary batteries include lithium polymer batteries (lithium-ion batteries) that use a gel-like electrolyte. Lithium-ion secondary batteries such as polymer batteries, nickel-metal hydride batteries, nickel-cadmium batteries, organic Examples include radical batteries, lead-acid batteries, air-based rechargeable batteries, nickel-zinc batteries, and silver-zinc batteries. ru.

[0336] An electronic device according to one aspect of the present invention may have an antenna. The antenna receives a signal. This allows the display unit to show images, information, etc. Also, the electronic device acts as an antenna. Furthermore, if a secondary battery is present, the antenna may be used for contactless power transmission.

[0337] An electronic device according to one aspect of the present invention includes a sensor (force, displacement, position, velocity, acceleration, angular velocity, rotation). Number, distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, electric current, voltage, power (including functions for measuring radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation) It is acceptable to have it.

[0338] An electronic device according to one aspect of the present invention can have various functions. For example, various information Functions to display (still images, videos, text images, etc.) on the display unit, touch panel function, calendar Functions to display the date or time, and to run various software (programs). Functions include: wireless communication, and reading programs or data recorded on a recording medium. It may have functions, etc.

[0339] Furthermore, in electronic devices having multiple display units, one display unit primarily displays image information. A function that displays one display unit and primarily displays text information on another display unit, or multiple display units It can have functions such as displaying three-dimensional images by displaying images that take parallax into account. Furthermore, in electronic devices having an image receiving unit, the function of taking still images or videos, Functions to automatically or manually correct shadowed images, and to record captured images on a recording medium (external or electronic). It can have functions such as saving to a built-in device and displaying captured images on the display unit. It is possible. However, the functions of an electronic device according to one aspect of the present invention are not limited to these, and various functions It can have.

[0340] A display device according to one aspect of the present invention can display extremely high-resolution images. In particular, portable electronic devices, wearable electronic devices, and e-readers. It can be suitably used in various applications. Furthermore, it can be used with VR (Virtual Reality) equipment and It can also be suitably used in AR (Augmented Reality) devices and the like.

[0341] Figures 18(A) and (B) show an example of a personal digital assistant (PDA) 800. The PDA 800 is... It has a housing 801, a housing 802, a display unit 803, a display unit 804, and a hinge unit 805, etc. .

[0342] The housing 801 and housing 802 are connected by a hinge portion 805. The portable information terminal 800 is As shown in Figure 18(A), the housing 801 is folded, and as shown in Figure 18(B) And you can open the casing 802.

[0343] For example, it is possible to display document information on display units 803 and 804, electronic It can also be used as a book reader. Furthermore, still images can be displayed on the display units 803 and 804. It can also display videos and images.

[0344] Thus, the portable information terminal 800 can be folded for portability, making it suitable for a wide range of uses. Excellent usability.

[0345] Furthermore, the enclosure 801 and enclosure 802 have a power button, operation buttons, an external connection port, and It may have a speaker, microphone, etc.

[0346] Figure 18(C) shows an example of a personal digital information terminal. The personal digital information terminal 810 shown in Figure 18(C) is , housing 811, display unit 812, operation buttons 813, external connection port 814, speaker 81 5. It has a microphone 816, a camera 817, etc.

[0347] The display unit 812 is equipped with a display device according to one aspect of the present invention. By using a display device as the display unit 812, even if the area of ​​the display unit 812 is small, the image can be captured. It is possible to examine the details of the image.

[0348] The personal information terminal 810 is equipped with a touch sensor on the display unit 812. To make a phone call, or All operations, such as entering text, are performed by touching the display unit 812 with a finger or stylus. It can be done in this way.

[0349] Furthermore, the power can be turned ON or OFF by operating the operation button 813, and the display unit 812 will display an item. You can switch the type of image displayed. For example, from the email composition screen, you can switch to the main image. You can switch to a new screen.

[0350] Furthermore, the mobile information terminal 810 contains a detection device such as a gyro sensor or an accelerometer. By providing this, the orientation (vertical or horizontal) of the mobile information terminal 810 is determined, and the image of the display unit 812 is displayed accordingly. The orientation of the screen display can be automatically switched. To replace it, touch the display unit 812, operate the operation button 813, or use the microphone 816. This can also be done using voice input or other methods.

[0351] The personal information terminal 810 is one selected from, for example, a telephone, a notebook, or an information viewing device. Or it has multiple functions. Specifically, it can be used as a smartphone. The mobile information terminal 810 can, for example, make phone calls, send emails, view and create documents, play music, and move It can run various applications such as video playback, internet communication, and games. Cut.

[0352] Figure 18(D) shows an example of a camera. Camera 820 consists of a housing 821, a display unit 822, It has operation buttons 823, a shutter button 824, etc. Furthermore, the camera 820 has a detachable A possible lens 826 is attached.

[0353] The display unit 822 is equipped with a display device according to one aspect of the present invention.

[0354] Here, we'll refer to the camera 820 as the lens 826, which will be removed from the housing 821 and replaced. This configuration allows for this, but the lens 826 and the housing could also be integrated.

[0355] Camera 820 takes still images or videos by pressing the shutter button 824. It can be displayed. Also, the display unit 822 has the function of a touch panel, and the display unit 8 It is also possible to take an image by touching button 22.

[0356] Note that the Camera 820 requires the attachment of a separate flash unit, viewfinder, etc. This is possible. Alternatively, these may be incorporated into the enclosure 821.

[0357] Figure 19(A) shows the appearance of the camera 840 with the viewfinder 850 attached. .

[0358] Camera 840 consists of a housing 841, a display unit 842, operation buttons 843, and a shutter button 8 It has 44, etc. Furthermore, a detachable lens 846 is attached to the camera 840. ru.

[0359] Here, we'll refer to the camera 840 as the lens 846, which will be removed from the housing 841 and replaced. This configuration allows for this, but the lens 846 and the housing could also be integrated.

[0360] Camera 840 can take an image by pressing the shutter button 844. Furthermore, the display unit 842 also functions as a touch panel, and by touching the display unit 842... It is also possible to image using this method.

[0361] The camera body 841 of the camera 840 has a mount with electrodes, and the viewfinder 850 is also Alternatively, a strobe light or similar device can be connected.

[0362] The viewfinder 850 includes a housing 851, a display unit 852, buttons 853, etc.

[0363] The housing 851 has a mount that engages with the mount of the camera 840, and the viewfinder -850 can be attached to camera 840. Furthermore, the mount has electrodes. The video and other images received from the camera 840 via the electrode are displayed on the display unit 852. can.

[0364] Button 853 functions as a power button. Button 853 activates the display unit 85 You can switch the display of item 2 on or off.

[0365] An embodiment of the present invention is shown in the display unit 842 of the camera 840 and the display unit 852 of the viewfinder 850. Various display devices can be applied. A display device manufactured using one aspect of the present invention can be shown. By using it in the display units 842 and 852, even if the area of ​​the display units 842 and 852 is small, the captured image It is possible to examine the details of the image or photograph.

[0366] Note that in Figure 19(A), the camera 840 and the viewfinder 850 are treated as separate electronic devices. These are configured to be detachable, but the housing 841 of the camera 840 has an indication of one aspect of the present invention. A viewfinder equipped with a device may be built into the camera.

[0367] Figure 19(B) shows the external appearance of the head-mounted display 860.

[0368] The head-mounted display 860 consists of a mounting part 861, lenses 862, main body 863, and front It has an indicator part 864, a cable 865, etc. Also, the mounting part 861 has a battery 866 It has a built-in feature.

[0369] Cable 865 supplies power from battery 866 to main unit 863. Main unit 863 is The device includes a line receiver and displays received video information such as image data on the display unit 864. Yes, it is possible. Furthermore, a camera located on the main unit 863 captures the user's eyeball and eyelid movements, and By calculating the coordinates of the user's viewpoint based on this information, the user's viewpoint is used as the input. It can be used.

[0370] Furthermore, the attachment portion 861 may be provided with multiple electrodes in positions that come into contact with the user. The main unit 863 detects the current flowing through the electrodes in response to the user's eye movements, and then... It may also have a function to recognize the user's viewpoint. Furthermore, it may have a function to detect the current flowing through the electrode. The device may also have a function to monitor the user's pulse. It may also have various sensors such as temperature sensors, pressure sensors, and acceleration sensors, and the user The system may also have a function to display biometric information on the display unit 864. Furthermore, it may also display the user's head movements. The system may detect such movements and change the image displayed on the display unit 864 to match those movements.

[0371] A display device according to one aspect of the present invention can be applied to the display unit 864. By using a display device manufactured using this method in the display unit 864, a realistic image can be displayed. It is possible to do so.

[0372] Figures 19(C) and (D) show the external appearance of the head-mounted display 870.

[0373] The head-mounted display 870 consists of a housing 871, two display units 872, and control buttons. It has 873 and a band-shaped fastener 874.

[0374] The head-mounted display 870 has the same features as the head-mounted display 860 described above. In addition to its functions, it is equipped with two display units.

[0375] Having two display units 872 allows the user to view one display unit per eye. This allows for high-resolution display even when using parallax for 3D visualization. An image can be displayed. Furthermore, the display unit 872 is positioned in an arc shape roughly centered on the user's eyes. It is curved. This ensures that the distance from the user's eyes to the display surface of the display unit remains constant. This allows users to see more natural images. In addition, the brightness and color of the light from the display unit can be seen. Even in cases where it changes depending on the angle, the normal direction of the display surface of the display unit is used. Because the viewer's eyes are positioned there, their influence can be practically ignored, resulting in a more realistic view. It can display images.

[0376] Operation button 873 has functions such as a power button. In addition to operation button 873 It may have buttons.

[0377] Furthermore, as shown in Figure 19(E), a lens is placed between the display unit 872 and the user's eye position. It may have lens 875. Lens 875 allows the user to view the display unit 872 in a magnified view. This allows for a greater sense of realism. At this time, as shown in Figure 19(E), the diopter adjustment It may have a dial 876 for changing the position of the lens for the node.

[0378] A display device according to one aspect of the present invention can be applied to the display unit 872. Because the display device has extremely high resolution, it can be magnified using lens 875 as shown in Figure 19(E). Even if it's not a big deal, it displays a more realistic image without the user being able to see the individual pixels. It is possible.

[0379] Figures 20(A) and (B) show an example where there is one display unit 872. By adopting such a configuration, the number of parts can be reduced.

[0380] The display unit 872 displays two images, one for the right eye and one for the left eye, in two separate areas. Images can be displayed side by side. This allows for the display of stereoscopic images using binocular parallax. It is possible.

[0381] Alternatively, a single image visible to both eyes may be displayed across the entire area of ​​the display unit 872. This makes it possible to display panoramic images across both edges of the field of view, The feeling of realism intensifies.

[0382] Furthermore, the aforementioned lens 875 may be provided. The display unit 872 displays two images side by side. Alternatively, one image may be displayed on the display unit 872 and viewed through both eyes via the lens 875. It would also be acceptable to configure the system so that everyone can view the same image.

[0383] Furthermore, the display unit 872 does not have to be curved, and the display surface may be flat. Figures 20(C) and (D) show an example where there is a single display unit 872 that does not have a curved surface. They are doing it.

[0384] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination. [Examples]

[0385] In this example, an aluminum oxide film formed using the sputtering method or the ALD method... Let's explain each membrane density.

[0386] <Sample S1 and Sample S2> A 500 nm thick aluminum oxide film is formed on a glass substrate using the sputtering method. The deposition conditions are shown in Table 1. Aluminum was used as the sputtering target. Furthermore, by using a reactive sputtering method that employs a mixed gas containing oxygen as the sputtering gas... Then, an aluminum oxide film was formed.

[0387] [Table 1]

[0388] <Sample A1 to Sample A3> Aluminum oxide film with a thickness of 100 nm or 50 nm on a glass substrate using ALD method. A sample was formed. The thickness of the aluminum oxide film in sample A1 is 100 nm. Samples A2 and... The aluminum oxide film thickness of sample A3 is 50 nm. Samples A1 and A2 are the same as sample A The cycle times for 3 and 1 are different. Also, sample A1, sample A3, and sample A3 are each different. The film deposition times differ. The deposition conditions are shown in Table 2. Note that one cycle refers to the time it takes for the precursor and oxidizer to be deposited. This is the time required for each gas exchange. A longer time per cycle indicates a longer deposition chamber. This can reduce the residue of unreacted precursors.

[0389] [Table 2]

[0390] The density of the aluminum oxide film contained in sample S1, sample S2, and samples A1 to A3 The results of the degree measurement are shown in Table 3. Here, a TRXV-SMX manufactured by Technos Co., Ltd. was used. The film density was measured using X-ray reflectivity. The derivation of the film density was performed using the bottom and top surfaces. The procedure was carried out by removing the interfacial layer.

[0391] [Table 3]

[0392] Table 3 shows that the aluminum oxide film formed using the ALD method has a yield per cycle. By increasing the film duration, the amount of impurities contained in the film can be reduced, thus increasing the film density. It can be seen that this is possible. Furthermore, by using the sputtering method, impurities contained in the film can be removed. It can reduce the amount of material used. [Examples]

[0393] In this example, the quantitative values ​​of elements contained in the aluminum oxide film formed in Example 1 are as follows: I will now explain the results of the measurements.

[0394] Aluminum contained in the films of sample S1, sample S2, sample A1, and sample A2, The quantitative values ​​of oxygen and carbon were measured using X-ray photoelectron spectroscopy. The measurement results are shown in Table 4. In this embodiment of XPS, a PHI QuanteraSXM was used as the measurement device, and the X-ray source was... For this purpose, a monochromatic AlKα line (1.486 keV) was used.

[0395] [Table 4]

[0396] Table 4 shows that the aluminum oxide film formed using the sputtering method contains aluminum It was found that it contains aluminum and oxygen. Furthermore, the aluminum oxide formed using the ALD method It was found that the aluminum film contains aluminum, oxygen, and trace amounts of carbon. Trimethylaluminum is used as a precursor, which is a raw material for forming a aluminum film. Therefore, the carbon of the methyl group was not oxidized and remained in the aluminum oxide film, so carbon is present. It is thought that this is the case.

[0397] Furthermore, as shown in Table 4, the aluminum oxide film formed using the ALD method is sputtered. Compared to the aluminum oxide film formed using the method, the oxygen atoms relative to aluminum It was found that the numerical ratio (O / Al) was large. In other words, it was formed using the sputtering method. The aluminum oxide film formed by the ALD method and the aluminum oxide film formed by the ALD method have different compositions. It turned out they were different.

[0398] From this, it follows that an aluminum oxide film is produced using the sputtering method, and an acid is produced using the ALD method. When aluminum oxide films are sequentially laminated to form a protective film, the protective film is formed by the aluminum oxide film of the underlying layer. The upper aluminum oxide film has a higher carbon content than the aluminum film. Aluminum oxide films are sequentially laminated using the laminated aluminum oxide method and then using the ALD method. When a protective film is formed, the protective film is protected against the lower layer of aluminum oxide film by the upper layer of aluminum oxide film. The aluminum film has a higher oxygen atom ratio (O / Al) to aluminum. The ratio of aluminum to oxygen in the aluminum oxide film formed by the tarring method is stoichiometric. It can be seen that the composition is close to (Al2O3). [Examples]

[0399] In this example, the optical properties of an aluminum oxide film formed using the sputtering method are described. I will explain.

[0400] First, the method for preparing the sample will be explained. Here, the same procedure as for sample S1 shown in Example 1 will be used. In this case, a 500 nm aluminum oxide film was formed using the sputtering method.

[0401] Figure 21(A) shows the transmittance, reflectance, and absorptance of the sample. In Figure 21(A), The horizontal axis represents wavelength, and the vertical axis represents the transmittance, reflectance, and absorptance of light at each wavelength. The solid line represents transmittance and absorption. The lines represent reflectance, and the dotted lines represent absorptance. As shown in Figure 21(A), the transmittance in the sample is high. It becomes clear that...

[0402] For reference, a 70nm thick glass substrate formed using the sputtering method. The optical properties of the ITO film are shown in Figure 21(B).

[0403] The transmittance of the aluminum oxide film shown in Figure 21(A) is the transmittance of ITO shown in Figure 21(B). The ratio is above. Therefore, aluminum oxide formed on the light-emitting element using the sputtering method Forming a nium film does not hinder the efficiency of extracting light emitted from the light-emitting element. [Examples]

[0404] In this embodiment, the cross-sectional shape of the protective film is defined as STEM (Scanning Transmiss). Observations were made using ion electron microscopy.

[0405] First, I will explain the method for preparing the sample.

[0406] As shown in Figures 1(A) and 1(B), the first electrode 10 was formed on the substrate 40. In this case, a glass substrate was used as the substrate 40. Furthermore, the first electrode 10 was made of a material with a thickness of 100 nm. It was formed by laminating an m Ag-Pd-Cu alloy film with a 95 nm thick ITO film.

[0407] Next, an insulating film 14 was formed on the first electrode 10. Here, the insulating film 14 has a thickness A 1000 nm polyimide film was formed.

[0408] Next, an EL layer 16 with a thickness of 200 nm was formed on the first electrode 10 and the insulating film 14.

[0409] Next, a second electrode 18 was formed on the EL layer 16. Here, the second electrode 18 is: The film was formed by layering a 15nm thick Ag-Mg alloy film with a 70nm thick ITO film.

[0410] Next, an insulating film 24 was formed on the second electrode 18, and an insulating film 26 was formed on the insulating film 24. Here, as the insulating film 24, a 300 nm thick layer of aluminum oxide is used, prepared by sputtering. After forming the aluminum film, a 50 nm thick aluminum oxide film was used as the insulating film 26 using the ALD method. A nium film was formed.

[0411] Next, a carbon film C and a platinum film Pt are deposited on the insulating film 26 as protective films for STEM observation. Layers were formed.

[0412] The cross-section of the sample was observed using a STEM. The observation results are shown in Figure 22(A).

[0413] Furthermore, as a comparative example, a comparative sample was formed in which no insulating film 26 was formed on the insulating film 24. Here, as the insulating film 24, a 1000 nm thick aluminum oxide film is used by sputtering. A film of um was formed.

[0414] The cross-section of the comparative sample was observed using STEM. The observation results are shown in Figure 22(B).

[0415] Figures 22(A) and (B) are STEM images. Note that Figures 22(A) and (B) are odor Therefore, defective areas and low-density areas are observed to have lower contrast compared to high-density areas. As shown in Figure 22(B), the region of the insulating film 14 whose surface is oblique to the substrate overlaps with the insulating film Numerous linear, low-density regions were observed in the area of ​​the border membrane 24 (indicated by the dashed rectangle).

[0416] On the other hand, in Figure 22(A), the insulating film 26 is formed on the insulating film 24, Even when 24 overlaps with the region of the insulating film 14 whose surface is oblique to the substrate, the linear low density No region was observed.

[0417] As shown in Figure 22, the ALD method was applied to an aluminum oxide film formed using the sputtering method. By using this method to form a laminated aluminum oxide film, the aluminum oxide film formed by the sputtering method It can be seen that the low-density region of the luminium film is reduced. This is because the ALD method is used in the low-density region. One possible cause is that the aluminum oxide formed by this process fills the cavity. [Examples]

[0418] In this example, in the aluminum oxide film contained in the sample formed in Example 1, water vapor This section explains the results of evaluating the moisture transmittance using an air transmittance measuring instrument. It also describes the results of the process performed on a light-emitting element. The aluminum oxide film formed in the sample in Example 1 was then stored in a high-temperature, high-humidity atmosphere. I will explain the results of the test.

[0419] <Water vapor transmission rate> First, the sample preparation process will be explained using Figure 23.

[0420] As shown in Figure 23(A), an EL layer 903 was formed on the glass substrate 901. Next, E An insulating film 905 was formed on the L layer 903 by sputtering. Next, insulating film 905 An insulating film 907 was formed on top by the ALD method. Note that insulating films 905 and 907 are It functions as a protective film 908. The insulating film 907 and the film 911 are bonded together using adhesive 909. It was fixed in place.

[0421] Next, as shown in Figure 23(B), a sharp cutting tool such as a knife is used to cut the EL layer 9 03. Cuts are made in the insulating film 905, insulating film 907, adhesive 909, and film 911. In Figure 23(B), the dashed arrows indicate cuts.

[0422] Next, as shown in Figure 23(C), the EL layer 903 and the glass substrate 901 were peeled off.

[0423] Next, as shown in Figure 23(D), the EL layer 903 and the film 915 are bonded together with adhesive 913. It was used to fix it in place.

[0424] The sample was prepared using the above procedure.

[0425] Here, the aluminum oxide film of each sample shown in Example 1 is used as the protective film 908. Then the sample was prepared.

[0426] Next, the water vapor transmission rate of each sample was measured. The water vapor transmission rate was measured using MORESCO equipment. The gas and water vapor transmission rate was measured using a Super-Detect WG-7S gas and water vapor transmission rate measuring device. The film 911 or film 915 of each sample is exposed to a 40°C, 90% humidity atmosphere for several hours. At this time, via adhesive 913, EL layer 903, protective film 908, and adhesive 909 Then, the percentage of moisture that permeates from one film 911 to the other was measured. The higher the moisture blocking ability of the protective film 908, the lower the water vapor transmission rate.

[0427] Table 5 shows the composition of the protective film 908 in each sample and the water vapor transmission rate of each sample.

[0428] [Table 5]

[0429] Table 5 shows that samples M11 and M12 have lower water vapor transmission rates compared to sample S11. i. That is, as the protective film 908, aluminum oxide formed using the sputtering method Rather than using a single layer of aluminum film, an aluminum oxide film formed using the sputtering method and A By laminating an aluminum oxide film formed using the LD method, the water vapor transmission rate is reduced. It was found that the aluminum oxide film formed using the sputtering method and A laminated film of aluminum oxide film formed using the ALD method is used as a protective film for the light-emitting element. It was found that this makes it possible to reduce the diffusion of moisture from the outside to the light-emitting element. .

[0430] <High temperature and high humidity storage test> Next, protective films 90 contained in samples S11, M11, and M12 are placed on the light-emitting element. Samples S21, M21, and M22 were prepared by forming each of the 8s. Table 6 shows the composition of the protective films for S21, sample M21, and sample M22. Note that the planar shape of the samples is shown. The shape was a square with sides of 2 mm.

[0431] [Table 6]

[0432] Next, samples S21, M21, and M22 were stored in an atmosphere of 65°C and 95% humidity. The storage time for sample S21 was set to 0 hours, and the storage times for samples M21 and M22 were set to 50 hours. I set it to 0 hours.

[0433] Figures 24(A), (B), and (C) show the results after the storage test for sample S21 and test These are optical microscope images showing the light-emitting elements of material M21 and sample M22 in their illuminated state. .

[0434] As shown in Figure 24(A), a single layer of aluminum oxide film formed by sputtering is maintained. In sample S21, on which protective film 908 was formed, black spots were observed. Meanwhile, in Figures 24(B) and 24 As shown in (C), an aluminum oxide film formed by sputtering and an aluminum oxide film formed by ALD are used Sample M21 and Test No black spots were observed in material M22. From the above, one aspect of the present invention is observed on the light-emitting element. It was found that forming a protective film can prevent the degradation of the light-emitting element.

[0435] <Luminous properties> Next, the luminescence properties of samples M21 and M22 were evaluated after high-temperature, high-humidity storage tests. Figures 25 and 26 show the luminescence characteristics of sample M21 and sample M22, respectively. In Figure 26, (A) shows the voltage-current characteristics of the light-emitting element before and after the storage test, and (B) shows the storage The brightness current efficiency characteristics of the light-emitting element before and after the storage test are shown.

[0436] Figures 25 and 26 show that even after the storage test (500 hours), the initial state (0 hours) and It was found that similar optical properties were obtained. That is, the components contained in sample M21 and sample M22 The protective film reduces moisture diffusion from the outside to the light-emitting element, thus preventing the light-emitting element from degrading. It turned out that it wasn't there. [Explanation of symbols]

[0437] 10 electrodes 12 electrodes 14. Insulating film 16 EL layer 18 electrodes 18a area 18b area 20 Light-emitting elements 22 Light-emitting element 24 Insulating film 24_1 Insulating film 24a Low density area 24b area 26 Insulating film 26_1 Insulating film 28 Protective film 28_1 Protective film 30 Colored film 32 Colored film 40 circuit boards 42 circuit boards 44 Adhesives 70 display area 75 pixel unit 76 pixels 76B display element 76G Display Elements 76R display elements 77 pixels 77B display element 77G display elements 77R display elements 79 light 111 Conductive film 111b Conductive film 111c Conductive film 112a Semiconductor film 112b Semiconductor film 113a Conductive film 113b Conductive film 113c conductive film 113d conductive film 121 Conductive film 122 EL layer 122B EL layer 122G EL layer 122R EL layer 123 Conductive film 125 Protective film 129 Light Diffuser 130 Capacitive elements 132 Insulating film 133 Insulating film 134 Insulating Film 135 Insulating film 136 Insulating film 137 Insulating Film 138 Insulating film 139 Insulating film 140 Polarizing plates 141 Carrier injection layer 141B Carrier injection layer 141G carrier injection layer 141R Carrier Injection Layer 142 Carrier transport layer 142B Carrier transport layer 142G Carrier Transport Layer 142R Carrier transport layer 143B Emitting layer 143G emissive layer 143R emissive layer 144 Carrier transport layer 144B Carrier transport layer 144G Carrier Transport Layer 144R Carrier transport layer 145 Carrier injection layer 145B Carrier injection layer 145G carrier injection layer 145R carrier injection layer 151a Adhesive layer 152B Colored film 152G colored film 152R colored film 165 Insulating film 167 Insulating film 173a Alignment film 173b Alignment film 174 Colored film 175 Colored film 176 Light-shielding film 182 Adhesive 183 Adhesive 191 Conductive film 192 EL layer 193a Conductive film 193b Conductive film 201 Transistors 204 Connection part 205 transistors 206 transistors 207 Connection part 209 areas 211 Insulating film 212 Insulating film 213 Insulating film 214 Insulating film 215 Insulating film 216 Insulating film 217 Insulating film 220 insulating film 221 Conductive film 222 Conductive film 223 Conductive film 224 Conductive film 228 Protective film 230 areas 231 Semiconductor film 242 connectors 243 Connectors 251 Aperture 252 Connection part 300 display device 311 Electrode 311b Conductive film 312 LCD 313 Conductive film 340 LCD buttons 360 light-emitting elements 360b light-emitting element 360g light-emitting element 360r light-emitting element 360W light-emitting element 366 Input Devices 370 Conductive film 400 display device 410 pixels 451 Aperture 710 Display device 720a Display element 720b display elements 721B Display Element 721G display elements 721R display elements 722B display element 722G display element 722R display elements 731 Insulating Film 741a Transistor 741b Transistor 741c transistor 741d transistor 741e transistor 741f transistor 741g Transistor 741h transistor 742a Transistor 742b Transistor 751a substrate 751b board 752a substrate 752b circuit board 761a Display section 761b Display section 762a circuit section 763a FPC 764a IC 765a Wiring 800 Mobile Information Terminals 801 cabinet 802 cabinet 803 Display section 804 Display section 805 Hinge section 810 Mobile Information Terminal 811 cabinet 812 Display section 813 Operation Buttons 814 External connection port 815 Speaker 816 Mike 817 Camera 820 Camera 821 cabinet 822 Display section 823 Operation Buttons 824 Shutter button 826 Lens 840 Camera 841 cabinet 842 Display section 843 Operation Buttons 844 Shutter button 846 lens 850 Finder 851 cabinet 852 Display section 853 Button 860 Head-Mounted Display 861 Mounting part 862 lens 863 Main Unit 864 Display section 865 Cable 866 Battery 870 Head-mounted display 871 cabinet 872 Display section 873 Operation Buttons 874 Fixtures 875 lens 876 Dial 901 Glass Substrate 903 EL layer 905 Insulating film 907 Insulating film 908 Protective film 909 Adhesive 911 film 913 Adhesive 915 film 8000 Display Module 8001 Top cover 8002 Lower cover 8003 FPC 8004 Touch Panel 8005 FPC 8006 Display Panel 8009 Frame 8010 Printed Circuit Board 8011 Battery

Claims

1. It has a first transistor, a second transistor, and a display element, A first semiconductor film having a channel formation region of the first transistor, A first conductive film having a region positioned above the first semiconductor film and functioning as the gate electrode of the first transistor, A first insulating film having a region positioned above the first semiconductor film, A second conductive film having a region positioned above the first insulating film and electrically connected to either the source or drain of the first transistor via a first contact hole in the first insulating film, A second insulating film having a region positioned above the first conductive film and a region positioned above the second conductive film, A second semiconductor film having a region positioned above the second conductive film via the second insulating film, and having a channel formation region for the second transistor, A third conductive film having a region located above the second semiconductor film, via a third insulating film having a region located above the second semiconductor film, and having a function as the first gate electrode of the second transistor, A fourth insulating film having a region positioned above the second semiconductor film and a region positioned above the third conductive film, A fourth conductive film having a region positioned above the fourth insulating film and electrically connected to either the source or the drain of the second transistor via a second contact hole in the fourth insulating film, The fourth conductive film is electrically connected to the pixel electrode of the display element, The second conductive film has a first region which is a region that overlaps with the second semiconductor film and does not overlap with the first semiconductor film. The second conductive film functions as the second gate electrode of the second transistor and is electrically connected to the third conductive film. Display device.

2. It has a first transistor, a second transistor, and a display element, A first semiconductor film having a channel formation region of the first transistor, A first conductive film having a region positioned above the first semiconductor film and functioning as the gate electrode of the first transistor, A first insulating film having a region positioned above the first semiconductor film, A second conductive film having a region positioned above the first insulating film and electrically connected to either the source or drain of the first transistor via a first contact hole in the first insulating film, A second insulating film having a region positioned above the first conductive film and a region positioned above the second conductive film, A second semiconductor film having a region positioned above the second conductive film via the second insulating film, and having a channel formation region for the second transistor, A third conductive film having a region located above the second semiconductor film, via a third insulating film having a region located above the second semiconductor film, and having a function as the first gate electrode of the second transistor, A fourth insulating film having a region positioned above the second semiconductor film and a region positioned above the third conductive film, A fourth conductive film having a region positioned above the fourth insulating film and electrically connected to either the source or the drain of the second transistor via a second contact hole in the fourth insulating film, The fourth conductive film is electrically connected to the pixel electrode of the display element, In a cross-sectional view including the channel formation region and the second contact hole of the second transistor, the second conductive film has a wider region than the third conductive film. The second conductive film has a first region which is a region that overlaps with the second semiconductor film and does not overlap with the first semiconductor film. The second conductive film functions as the second gate electrode of the second transistor and is electrically connected to the third conductive film. Display device.

3. It has a first transistor, a second transistor, and a display element, A first semiconductor film having a channel formation region of the first transistor, A first conductive film having a region positioned above the first semiconductor film and functioning as the gate electrode of the first transistor, A first insulating film having a region positioned above the first semiconductor film, A second conductive film having a region positioned above the first insulating film and electrically connected to either the source or drain of the first transistor via a first contact hole in the first insulating film, A second insulating film having a region positioned above the first conductive film and a region positioned above the second conductive film, A second semiconductor film having a region positioned above the second conductive film via the second insulating film, and having a channel formation region for the second transistor, A third conductive film having a region located above the second semiconductor film, via a third insulating film having a region located above the second semiconductor film, and having a function as the first gate electrode of the second transistor, A fourth insulating film having a region positioned above the second semiconductor film and a region positioned above the third conductive film, A fourth conductive film having a region positioned above the fourth insulating film and electrically connected to either the source or the drain of the second transistor via a second contact hole in the fourth insulating film, The second semiconductor film comprises an oxide semiconductor, The fourth conductive film is electrically connected to the pixel electrode of the display element, The second conductive film has a first region which is a region that overlaps with the second semiconductor film and does not overlap with the first semiconductor film. The second conductive film functions as the second gate electrode of the second transistor and is electrically connected to the third conductive film. Display device.

4. It has a first transistor, a second transistor, and a display element, A first semiconductor film having a channel formation region of the first transistor, A first conductive film having a region positioned above the first semiconductor film and functioning as the gate electrode of the first transistor, A first insulating film having a region positioned above the first semiconductor film, A second conductive film having a region positioned above the first insulating film and electrically connected to either the source or drain of the first transistor via a first contact hole in the first insulating film, A second insulating film having a region positioned above the first conductive film and a region positioned above the second conductive film, A second semiconductor film having a region positioned above the second conductive film via the second insulating film, and having a channel formation region for the second transistor, A third conductive film having a region located above the second semiconductor film, via a third insulating film having a region located above the second semiconductor film, and having a function as the first gate electrode of the second transistor, A fourth insulating film having a region positioned above the second semiconductor film and a region positioned above the third conductive film, A fourth conductive film having a region positioned above the fourth insulating film and electrically connected to either the source or the drain of the second transistor via a second contact hole in the fourth insulating film, The second semiconductor film comprises an oxide semiconductor, The fourth conductive film is electrically connected to the pixel electrode of the display element, In a cross-sectional view including the channel formation region and the second contact hole of the second transistor, the second conductive film has a wider region than the third conductive film. The second conductive film has a first region which is a region that overlaps with the second semiconductor film and does not overlap with the first semiconductor film. The second conductive film functions as the second gate electrode of the second transistor and is electrically connected to the third conductive film. Display device.

5. In claim 3 or claim 4, The oxide semiconductors include In-Ga-Zn oxides, In-Al-Zn oxides, In-Sn-Zn oxides, In-Hf-Zn oxides, In-La-Zn oxides, In-Ce-Zn oxides, In-Pr-Zn oxides, In-Nd-Zn oxides, In-Sm-Zn oxides, In-Eu-Zn oxides, In-Gd-Zn oxides, In-Tb-Zn oxides, and In-Dy-Zn oxides. It is one of the following: oxide, In-Ho-Zn oxide, In-Er-Zn oxide, In-Tm-Zn oxide, In-Yb-Zn oxide, In-Lu-Zn ​​oxide, In-Sn-Ga-Zn oxide, In-Hf-Ga-Zn oxide, In-Al-Ga-Zn oxide, In-Sn-Al-Zn oxide, In-Sn-Hf-Zn oxide, and In-Hf-Al-Zn oxide. Display device.

Images