Method for manufacturing a display device and motherboard
By forming and adjusting partition walls with precise measurements and laser processing, the method enhances the reliability of OLED display devices by ensuring proper organic layer division and electrical connections, addressing manufacturing challenges.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- MAGNOLIA WHITE CORP
- Filing Date
- 2022-04-28
- Publication Date
- 2026-04-27
AI Technical Summary
Existing methods for manufacturing display devices with organic light-emitting diodes (OLEDs) face challenges in maintaining the reliability of the display devices due to issues with the partition walls in the manufacturing process.
The method involves forming a partition wall with a lower and upper part, measuring the widths and distance between these parts, and removing the upper part to ensure appropriate protrusion, using laser processing to adjust the partition wall structure, particularly in the peripheral area of the motherboard, to enhance reliability.
This approach helps in properly dividing the organic layers and ensuring electrical connections, thereby improving the reliability of the display device by maintaining appropriate protrusion amounts of the partition walls during the manufacturing process.
Smart Images

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Abstract
Description
Technical Field
[0001] Embodiments of the present invention relate to a method for manufacturing a display device and a mother substrate.
Background Art
[0002] In recent years, display devices applying organic light-emitting diodes (OLEDs) as display elements have been put into practical use.
[0003] By the way, the above-described display device is manufactured by preparing a mother substrate on which a plurality of display panels are formed on a mother base material formed by integrating a plurality of base materials, and using each of the display panels cut from the mother substrate.
[0004] In the process of manufacturing such a display device, a technique for suppressing a decrease in the reliability of the display device is required.
Prior Art Documents
Patent Documents
[0005]
Patent Document 1
Patent Document 2
Patent Document 3
Patent Document 4
Patent Document 5
Patent Document 6
Patent Document 7
Summary of the Invention
Problems to be Solved by the Invention
[0006] The object of the present invention is to provide a method for manufacturing a display device and a motherboard that can suppress a decrease in reliability. [Means for solving the problem]
[0007] The manufacturing method of the display device according to the embodiment involves forming a lower electrode on a substrate, forming a rib that covers a part of the lower electrode, forming a partition wall having a lower part positioned on the rib and an upper part that protrudes from the side surface of the lower part, and at least a part of the partition wall In the above The upper part is removed, the first width of the lower part of the partition wall and the second width of the upper part of the partition wall are measured, and the distance between the side surface of the lower part and the end of the upper part is measured based on the first and second widths. The substrate has a plurality of panel areas on which display panels are formed and a peripheral area that separates the plurality of panel areas. The partition wall is formed in both the plurality of panel areas and the peripheral area. The removal of the upper part and the measurement of the first width, second width, and distance are performed in the peripheral area. [Brief explanation of the drawing]
[0008] [Figure 1] Figure 1 shows an example of the configuration of a display device according to an embodiment. [Figure 2] Figure 2 shows an example of a sub-pixel layout. [Figure 3] Figure 3 is a schematic cross-sectional view of the display device along the line III-III in Figure 2. [Figure 4] Figure 4 is a schematic cross-sectional view of the partition wall. [Figure 5] Figure 5 is a schematic cross-sectional view illustrating a display element formed using a partition wall. [Figure 6] Figure 6 is a schematic cross-sectional view illustrating a display element formed using a partition wall. [Figure 7] Figure 7 is a schematic cross-sectional view illustrating a display element formed using a partition wall. [Figure 8] Figure 8 is a diagram illustrating the measurement of the protrusion amount of the partition wall. [Figure 9] Figure 9 is a diagram illustrating the measurement of the protrusion amount of the partition wall. [Figure 10] Figure 10 is a schematic diagram of the motherboard. [Figure 11] FIG. 11 is a diagram for explaining an outline of a method for manufacturing a display device. [Figure 12] FIG. 12 is a diagram showing an example of a pattern of partition walls formed in a peripheral region. [Figure 13] FIG. 13 is a diagram for explaining a region irradiated with a laser to remove an upper portion of a partition wall. MODE FOR CARRYING OUT THE INVENTION
[0009] An embodiment will be described with reference to the drawings. The disclosure is merely an example, and for those that can be easily conceived by a person skilled in the art for appropriate modifications while maintaining the gist of the invention, they are naturally included in the scope of the present invention. Further, the drawings may be schematically represented in terms of the width, thickness, shape, etc. of each part compared to the actual aspect for the purpose of making the description clearer, but they are merely examples and do not limit the interpretation of the present invention. Also, in this specification and each drawing, components that exhibit the same or similar functions as those described above with respect to the previously shown drawings may be assigned the same reference numerals, and detailed descriptions that are redundant may be omitted as appropriate.
[0010] In addition, in the drawings, for the purpose of facilitating understanding as necessary, an X-axis, a Y-axis, and a Z-axis that are orthogonal to each other are described. The direction along the X-axis is referred to as the first direction X, the direction along the Y-axis is referred to as the second direction Y, and the direction along the Z-axis is referred to as the third direction Z. Looking at various elements parallel to the third direction Z is referred to as a plan view.
[0011] The display device in the present embodiment is an organic electroluminescence display device including an organic light-emitting diode (OLED) as a display element, and can be mounted on a television, a personal computer, in-vehicle equipment, a tablet terminal, a smartphone, a mobile phone terminal, and the like.
[0012] Figure 1 shows an example of the configuration of a display device DSP in this embodiment. The display device DSP has a display area DA for displaying an image and a non-display area NDA surrounding the display area DA, on an insulating substrate 10. The substrate 10 may be glass or a flexible resin film.
[0013] In this embodiment, the shape of the base material 10 in plan view is rectangular. However, the shape of the base material 10 in plan view is not limited to a rectangle; it may be a square, circle, ellipse, or other shape.
[0014] The display area DA comprises multiple pixels PX arranged in a matrix in the first direction X and the second direction Y. Each pixel PX includes multiple sub-pixels SP. In one example, pixel PX includes a red sub-pixel SP1, a green sub-pixel SP2, and a blue sub-pixel SP3. Pixel PX may also include sub-pixels SP of other colors, such as white, along with sub-pixels SP1, SP2, and SP3. Furthermore, pixel PX may include sub-pixels SP of other colors in place of any of sub-pixels SP1, SP2, and SP3.
[0015] The sub-pixel SP comprises a pixel circuit 1 and a display element 20 driven by the pixel circuit 1. The pixel circuit 1 comprises a pixel switch 2, a drive transistor 3, and a capacitor 4. The pixel switch 2 and the drive transistor 3 are switching elements composed of, for example, thin-film transistors.
[0016] The gate electrode of pixel switch 2 is connected to the scan line GL. One of the source and drain electrodes of pixel switch 2 is connected to the signal line SL, and the other is connected to the gate electrode of drive transistor 3 and capacitor 4. In drive transistor 3, one of the source and drain electrodes is connected to the power line PL and capacitor 4, and the other is connected to display element 20.
[0017] Note that the configuration of the pixel circuit 1 is not limited to the example shown in Figure 1. The pixel circuit 1 may, for example, include more thin-film transistors and capacitors.
[0018] The display element 20 is an organic light-emitting diode (OLED) as a light-emitting element. For example, sub-pixel SP1 is equipped with a display element 20 that emits light in the red wavelength range, sub-pixel SP2 is equipped with a display element 20 that emits light in the green wavelength range, and sub-pixel SP3 is equipped with a display element 20 that emits light in the blue wavelength range.
[0019] Figure 1 shows a display panel mainly used in the manufacture of a display device DSP. This display device DSP has a structure in which a circuit board or the like, which includes a driver (driver IC chip) for driving the display panel, is connected to the display panel.
[0020] Figure 2 shows an example of the layout of sub-pixels SP1, SP2, and SP3. In the example shown in Figure 2, sub-pixels SP1 and SP2 are aligned in the second direction Y. Furthermore, sub-pixels SP1 and SP2 are aligned with sub-pixel SP3 in the first direction X.
[0021] When the subpixels SP1, SP2, and SP3 are arranged as shown in Figure 2, the display area DA forms columns in which subpixels SP1 and SP2 are alternately arranged in the second direction Y, and columns in which multiple subpixels SP3 are repeatedly arranged in the second direction Y. These columns are arranged alternately in the first direction X.
[0022] Note that the layout of sub-pixels SP1, SP2, and SP3 is not limited to the example shown in Figure 2. As another example, the sub-pixels SP1, SP2, and SP3 in each pixel PX may be arranged sequentially in the first direction X.
[0023] The display area DA has ribs 5 and partition walls 6. Ribs 5 have apertures AP1, AP2, and AP3 in sub-pixels SP1, SP2, and SP3, respectively. In the example shown in Figure 2, aperture AP2 is larger than aperture AP1, and aperture AP3 is larger than aperture AP2. Partition walls 6 are positioned at the boundary between adjacent sub-pixels SP and overlap with ribs 5 in a plan view.
[0024] The partition wall 6 has a plurality of first partition walls 6x extending in a first direction X and a plurality of second partition walls 6y extending in a second direction Y. The plurality of first partition walls 6x are arranged between adjacent openings AP1 and AP2 in the second direction Y, and between two adjacent openings AP3 in the second direction Y. The second partition walls 6y are arranged between adjacent openings AP1 and AP3 in the first direction X, and between adjacent openings AP2 and AP3 in the first direction X.
[0025] In the example shown in Figure 2, the first partition wall 6x and the second partition wall 6y are connected to each other. As a result, the partition wall 6 as a whole is a grid that surrounds the openings AP1, AP2, and AP3. The partition wall 6 can also be said to have openings in the sub-pixels SP1, SP2, and SP3, similar to the rib 5.
[0026] In other words, in this embodiment, the rib 5 and the partition wall 6 are arranged to partition the sub-pixels SP1, SP2, and SP3.
[0027] Sub-pixel SP1 comprises a lower electrode LE1, an upper electrode UE1, and an organic layer OR1, which overlap with aperture AP1. Sub-pixel SP2 comprises a lower electrode LE2, an upper electrode UE2, and an organic layer OR2, which overlap with aperture AP2. Sub-pixel SP3 comprises a lower electrode LE3, an upper electrode UE3, and an organic layer OR3, which overlap with aperture AP3. In the example shown in Figure 2, the outer shapes of upper electrode UE1 and organic layer OR1 are the same, the outer shapes of upper electrode UE2 and organic layer OR2 are the same, and the outer shapes of upper electrode UE3 and organic layer OR3 are the same.
[0028] The lower electrode LE1, upper electrode UE1, and organic layer OR1 constitute the display element 20 of the sub-pixel SP1. The lower electrode LE2, upper electrode UE2, and organic layer OR2 constitute the display element 20 of the sub-pixel SP2. The lower electrode LE3, upper electrode UE3, and organic layer OR3 constitute the display element 20 of the sub-pixel SP3.
[0029] The lower electrode LE1 is connected to the pixel circuit 1 that drives the sub-pixel SP1 (display element 20) through the contact hole CH1. The lower electrode LE2 is connected to the pixel circuit 1 that drives the sub-pixel SP2 (display element 20) through the contact hole CH2. The lower electrode LE3 is connected to the pixel circuit 1 that drives the sub-pixel SP3 (display element 20) through the contact hole CH3.
[0030] In the example shown in Figure 2, contact holes CH1 and CH2 completely overlap with the first partition wall 6x between adjacent openings AP1 and AP2 in the second direction Y. Contact hole CH3 completely overlaps with the first partition wall 6x between two adjacent openings AP3 in the second direction Y. In another example, at least a portion of contact holes CH1, CH2, and CH3 may not overlap with the first partition wall 6x.
[0031] In the example shown in Figure 2, the lower electrodes LE1 and LE2 each have protrusions PR1 and PR2. Protrusion PR1 projects from the main body of the lower electrode LE1 (the part overlapping with the opening AP1) toward the contact hole CH1. Protrusion PR2 projects from the main body of the lower electrode LE2 (the part overlapping with the opening AP2) toward the contact hole CH2. Contact holes CH1 and CH2 overlap with protrusions PR1 and PR2, respectively.
[0032] Figure 3 is a schematic cross-sectional view of a display device DSP along the line III-III in Figure 2. In the display device DSP, an insulating layer 11 called an undercoat layer is placed on the substrate 10 (on the surface where the display elements 20 etc. are arranged).
[0033] The insulating layer 11 has a three-layer laminated structure, for example, consisting of a silicon oxide film (SiO), a silicon nitride film (SiN), and a silicon oxide film (SiO). However, the insulating layer 11 is not limited to a three-layer laminated structure; it may have a laminated structure of three or more layers, or it may have a single-layer structure or a two-layer laminated structure.
[0034] A circuit layer 12 is placed on top of the insulating layer 11. The circuit layer 12 has various circuits and wiring that drive the sub-pixels SP (SP1, SP2, and SP3), such as the pixel circuit 1 shown in Figure 1, scan line GL, signal line SL, and power line PL. The circuit layer 12 is covered by an insulating layer 13.
[0035] The insulating layer 13 functions as a planarizing film that flattens the irregularities caused by the circuit layer 12. Although not shown in Figure 3, the contact holes CH1, CH2, and CH3 described above are provided in the insulating layer 13.
[0036] The lower electrodes LE (LE1, LE2, and LE3) are positioned on the insulating layer 13. The ribs 5 are positioned on the insulating layer 13 and the lower electrodes LE. The ends (partially) of the lower electrodes LE are covered by the ribs 5.
[0037] The bulkhead 6 has a lower part 61 positioned on the rib 5 and an upper part 62 that covers the upper surface of the lower part 61. The upper part 62 has a greater width than the lower part 61 in the first direction X and the second direction Y. As a result, the bulkhead 6 has a shape in which both ends of the upper part 62 protrude beyond the sides of the lower part 61. This shape of the bulkhead 6 can also be described as overhanging.
[0038] The organic layers OR (OR1, OR2, and OR3) and upper electrodes UE (UE1, UE2, and UE3), together with the lower electrodes LE (LE1, LE2, and LE3) described above, constitute the display element 20. As shown in Figure 3, the organic layer OR1 includes a first organic layer OR1a and a second organic layer OR1b that are spaced apart from each other. The upper electrode UE1 includes a first upper electrode UE1a and a second upper electrode UE1b that are spaced apart from each other. The first organic layer OR1a contacts the lower electrode LE1 through the opening AP1 and covers a part of the rib 5. The second organic layer OR1b is located above the upper part 62. The first upper electrode UE1a faces the lower electrode LE1 and covers the first organic layer OR1a. Furthermore, the first upper electrode UE1a is in contact with the side surface of the lower part 61. The second upper electrode UE1b is located above the partition wall 6 and covers the second organic layer OR1b.
[0039] Furthermore, as shown in Figure 3, the organic layer OR2 includes a first organic layer OR2a and a second organic layer OR2b that are spaced apart from each other. The upper electrode UE2 includes a first upper electrode UE2a and a second upper electrode UE2b that are spaced apart from each other. The first organic layer OR2a contacts the lower electrode LE2 through the opening AP2 and covers a portion of the rib 5. The second organic layer OR2b is located above the upper part 62. The first upper electrode UE2a faces the lower electrode LE2 and covers the first organic layer OR2a. In addition, the first upper electrode UE2a contacts the side surface of the lower part 61. The second upper electrode UE2b is located above the partition wall 6 and covers the second organic layer OR2b.
[0040] Furthermore, as shown in Figure 3, the organic layer OR3 includes a first organic layer OR3a and a second organic layer OR3b that are spaced apart from each other. The upper electrode UE3 includes a first upper electrode UE3a and a second upper electrode UE3b that are spaced apart from each other. The first organic layer OR3a contacts the lower electrode LE3 through the opening AP3 and covers a portion of the rib 5. The second organic layer OR3b is located above the upper part 62. The first upper electrode UE3a faces the lower electrode LE3 and covers the first organic layer OR3a. In addition, the first upper electrode UE3a contacts the side surface of the lower part 61. The second upper electrode UE3b is located above the partition wall 6 and covers the second organic layer OR3b.
[0041] In the example shown in Figure 3, the sub-pixels SP1, SP2, and SP3 include cap layers CP1, CP2, and CP3 for adjusting the optical properties of the light emitted by the light-emitting layers of the organic layers OR1, OR2, and OR3.
[0042] The cap layer CP1 includes a first cap layer CP1a and a second cap layer CP1b that are spaced apart from each other. The first cap layer CP1a is located at the opening AP1 and is positioned above the first upper electrode UE1a. The second cap layer CP1b is located above the partition wall 6 and is positioned above the second upper electrode UE1b.
[0043] The cap layer CP2 includes a first cap layer CP2a and a second cap layer CP2b that are spaced apart from each other. The first cap layer CP2a is located at the opening AP2 and is positioned above the first upper electrode UE2a. The second cap layer CP2b is located above the partition wall 6 and is positioned above the second upper electrode UE2b.
[0044] The cap layer CP3 includes a first cap layer CP3a and a second cap layer CP3b that are spaced apart from each other. The first cap layer CP3a is located at the opening AP3 and is positioned above the first upper electrode UE3a. The second cap layer CP3b is located above the partition wall 6 and is positioned above the second upper electrode UE3b.
[0045] Sub-pixels SP1, SP2, and SP3 are each provided with sealing layers SE1, SE2, and SE3, respectively. Sealing layer SE1 continuously covers each component of sub-pixel SP1, including the first cap layer CP1a, partition wall 6, and second cap layer CP1b. Sealing layer SE2 continuously covers each component of sub-pixel SP2, including the first cap layer CP2a, partition wall 6, and second cap layer CP2b. Sealing layer SE3 continuously covers each component of sub-pixel SP3, including the first cap layer CP3a, partition wall 6, and second cap layer CP3b.
[0046] In the example shown in Figure 3, the second organic layer OR1b, second upper electrode UE1b, second cap layer CP1b, and sealing layer SE1 on the partition wall 6 between sub-pixels SP1 and SP3 are separated from the second organic layer OR3b, second upper electrode UE3b, second cap layer CP3b, and sealing layer SE3 on the same partition wall 6. Similarly, the second organic layer OR2b, second upper electrode UE2b, second cap layer CP2b, and sealing layer SE2 on the partition wall 6 between sub-pixels SP2 and SP3 are separated from the second organic layer OR3b, second upper electrode UE3b, second cap layer CP3b, and sealing layer SE3 on the same partition wall 6.
[0047] The sealing layers SE1, SE2, and SE3 are covered by a resin layer 14. The resin layer 14 is covered by a sealing layer 15. Furthermore, the sealing layer 15 is covered by a resin layer 16.
[0048] The insulating layer 13 and the resin layers 14 and 16 are made of organic material. The ribs 5, the sealing layer 15, and the SEs (SE1, SE2, and SE3) are made of inorganic material such as silicon nitride (SiNx).
[0049] The lower portion 61 of the partition wall 6 is conductive. The upper portion 62 of the partition wall 6 may also be conductive. The lower electrode LE may be formed of a transparent conductive oxide such as ITO (Indium Tin Oxide), or it may have a laminated structure of a metallic material such as silver (Ag) and a conductive oxide. The upper electrode UE is formed of a metallic material such as an alloy of magnesium and silver (MgAg). The upper electrode UE may also be formed of a conductive oxide such as ITO.
[0050] When the potential of the lower electrode LE is relatively higher than the potential of the upper electrode UE, the lower electrode LE corresponds to the anode and the upper electrode UE corresponds to the cathode. Conversely, when the potential of the upper electrode UE is relatively higher than the potential of the lower electrode LE, the upper electrode UE corresponds to the anode and the lower electrode LE corresponds to the cathode.
[0051] The organic layer OR includes a pair of functional layers and a light-emitting layer disposed between these functional layers. As an example, the organic layer OR has a structure in which a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer are stacked in that order.
[0052] The cap layer CP (CP1, CP2, and CP3) is formed, for example, by a multilayer structure of multiple transparent thin films. The multilayer structure may include thin films formed from inorganic materials and thin films formed from organic materials. Furthermore, these multiple thin films have different refractive indices. The materials of the thin films constituting the multilayer structure are different from the materials of the upper electrode UE and also different from the materials of the sealing layer SE. Note that the cap layer CP may be omitted.
[0053] A common voltage is supplied to the partition wall 6. This common voltage is supplied to the upper electrodes UE (first upper electrodes UE1a, UE2a, and UE3a) that are in contact with the side surface of the lower part 61. Pixel voltages are supplied to the lower electrodes LE (LE1, LE2, and LE3) through the pixel circuits 1 of the sub-pixels SP (SP1, SP2, and SP3).
[0054] When a potential difference is formed between the lower electrode LE1 and the upper electrode UE1, the light-emitting layer of the first organic layer OR1a emits light in the red wavelength range. When a potential difference is formed between the lower electrode LE2 and the upper electrode UE2, the light-emitting layer of the first organic layer OR2a emits light in the green wavelength range. When a potential difference is formed between the lower electrode LE3 and the upper electrode UE3, the light-emitting layer of the first organic layer OR3a emits light in the blue wavelength range.
[0055] As another example, the light-emitting layers of organic layers OR1, OR2, and OR3 may emit light of the same color (e.g., white). In this case, the display device DSP may include a color filter that converts the light emitted by the light-emitting layers into light of the color corresponding to the sub-pixels SP1, SP2, and SP3. Alternatively, the display device DSP may include a layer containing quantum dots that are excited by the light emitted by the light-emitting layers to generate light of the color corresponding to the sub-pixels SP1, SP2, and SP3.
[0056] Figure 4 is a schematic enlarged cross-sectional view of the partition wall 6. In Figure 4, elements other than the rib 5, partition wall 6, insulating layer 13, and the pair of lower electrodes LE are omitted. The pair of lower electrodes LE correspond to any of the lower electrodes LE1, LE2, and LE3 described above. Furthermore, the first partition wall 6x and the second partition wall 6y described above have the same structure as partition wall 6 shown in Figure 4.
[0057] In the example shown in Figure 4, the lower part 61 of the partition wall 6 includes a barrier layer 611 placed on the rib 5 and a metal layer 612 placed on the barrier layer 611. The barrier layer 611 is made of a different material from the metal layer 612, and is made of a metallic material such as molybdenum. The metal layer 612 is made thicker than the barrier layer 611. The metal layer 612 may be a single layer or a laminated structure of different metallic materials. As an example, the metal layer 612 may be made of aluminum (Al).
[0058] The upper part 62 is thinner than the lower part 61. In the example shown in Figure 4, the upper part 62 includes a first layer 621 placed on top of the metal layer 612 and a second layer 622 placed on top of the first layer 621. For example, the first layer 621 is made of titanium (Ti), and the second layer 622 is made of ITO. Here, the upper part 62 has been described as having a two-layer laminated structure, but the upper part 62 may also be a single-layer structure made of a metallic material such as titanium. Furthermore, the upper part 62 may be made of a material other than a metallic material, such as an inorganic material such as silicon oxide (SiO). Moreover, the upper part 62 may be laminated by appropriately combining conductive oxides such as ITO, metallic materials such as titanium, and inorganic materials such as silicon oxide, or it may be a single layer made of any of the above materials.
[0059] In the example shown in Figure 4, the width of the lower part 61 decreases as it approaches the upper part 62. That is, the sides 61a and 61b of the lower part 61 are inclined with respect to the third direction Z. The upper part 62 has an end 62a that protrudes from the side 61a and an end 62b that protrudes from the side 61b.
[0060] The amount of protrusion D of the ends 62a and 62b from the sides 61a and 61b (hereinafter referred to as the amount of protrusion D of the partition wall 6) is, for example, 2.0 μm or less. In this embodiment, the amount of protrusion D of the partition wall 6 corresponds to the distance between the lower ends (barrier layer 611) of the sides 61a and 61b and the ends 62a and 62b in the width direction (first direction X or second direction Y) perpendicular to the third direction Z of the partition wall 6.
[0061] The structure of the partition wall 6 and the materials of each part of the partition wall 6 may be selected as appropriate, taking into consideration, for example, the method of forming the partition wall 6.
[0062] In this embodiment, the partition wall 6 is formed to partition the sub-pixels SP in a plan view. The organic layer OR described above is formed, for example, by an anisotropic or directional vacuum deposition method. However, when the organic material for forming the organic layer OR is deposited over the entire substrate 10 with the partition wall 6 in place, the partition wall 6 has the shape shown in Figures 3 and 4, so almost no organic layer OR is formed on the sides of the partition wall 6. This makes it possible to form an organic layer OR (display element 20) that is divided into sub-pixels SP by the partition wall 6.
[0063] Figures 5 to 7 are schematic cross-sectional views illustrating the display element 20 formed using the partition wall 6. The sub-pixels SPα, SPβ, and SPγ shown in Figures 5 to 7 correspond to any of the sub-pixels SP1, SP2, and SP3.
[0064] As described above, with the partition wall 6 in place, the organic layer OR, upper electrode UE, cap layer CP, and sealing layer SE are sequentially formed on the entire substrate 10 by vapor deposition, as shown in Figure 5. The organic layer OR includes a light-emitting layer that emits light of a color corresponding to the sub-pixel SPα. The overhanging partition wall 6 divides the organic layer OR into a first organic layer ORa covering the lower electrode LE and a second organic layer ORb on the partition wall 6, the upper electrode UE into a first upper electrode UEa covering the first organic layer ORa and a second upper electrode UEb covering the second organic layer ORb, and the cap layer CP into a first cap layer CPa covering the first upper electrode UEa and a second cap layer CPb covering the second upper electrode UEb. The first upper electrode UEa is in contact with the lower part 61 of the partition wall 6. The sealing layer SE continuously covers the first cap layer CPa, the second cap layer CPb, and the partition wall 6.
[0065] Next, as shown in Figure 6, a resist R is formed on the sealing layer SE. The resist R covers the subpixel SPα. That is, the resist R is located directly above the first organic layer ORa, the first upper electrode UEa, and the first cap layer CPa located on the subpixel SPα. The resist R is also located directly above the portion of the second organic layer ORb, the second upper electrode UEb, and the second cap layer CPb on the partition wall 6 between the subpixel SPα and the subpixel SPβ that is closer to the subpixel SPα. That is, at least a part of the partition wall 6 is exposed from the resist R.
[0066] Furthermore, etching using the resist R as a mask removes the portions of the organic layer OR, upper electrode UE, cap layer CP, and sealing layer SE that are exposed from the resist R, as shown in Figure 7. As a result, a display element 20 including the lower electrode LE, first organic layer ORa, first upper electrode UEa, and first cap layer CPa is formed in the sub-pixel SPα. On the other hand, the lower electrode LE is exposed in the sub-pixels SPβ and SPγ. The etching described above includes, for example, dry etching of the sealing layer SE, wet etching and dry etching of the cap layer CP, wet etching of the upper electrode UE, and dry etching of the organic layer OR.
[0067] As described above, once the display element 20 of the sub-pixel SPα is formed, the resist R is removed, and the display elements 20 of the sub-pixels SPβ and SPγ are formed sequentially, similar to the sub-pixel SPα.
[0068] As illustrated above, the sub-pixels SPα, SPβ, and SPγ are used to form the display elements 20 of the sub-pixels SP1, SP2, and SP3. By further forming the resin layer 14, the sealing layer 15, and the resin layer 16, the structure of the display device DSP shown in Figure 3 is realized.
[0069] As described above, the partition wall 6 has a lower part 61 and an upper part 62 that protrudes from the side of the lower part 61. However, if the amount of protrusion D (canopy width) of the partition wall 6 is not appropriate, the reliability of the display device DSP may decrease.
[0070] Specifically, in the DSP display device, the organic layer OR is divided for each sub-pixel SP by a partition wall 6. If the protrusion amount D of the partition wall 6 is not sufficiently larger than the design value, it may not be possible to properly divide the organic layer OR. Also, if the side surface of the lower part 61 of the partition wall 6 is covered by the organic layer OR, the electrical connection between the lower part 61 and the upper electrode UE will be hindered. On the other hand, in the DSP display device, the upper electrode UE is in contact with the side surface of the lower part 61 of the partition wall 6. However, if the protrusion amount D of the partition wall 6 exceeds the design value, it may not be possible for the upper electrode UE to be in contact with the side surface of the lower part 61.
[0071] In other words, if the protrusion amount D of the partition wall 6 is not appropriate, it is not possible to manufacture a highly reliable display device DSP. Therefore, it is useful to measure the protrusion amount D (i.e., the distance between the side surface of the lower part 61 and the end of the upper part 62 of the partition wall 6) during the manufacturing process of the display device DSP. For measuring the protrusion amount D of the partition wall 6, for example, a length measuring camera configured to measure the length of an object by capturing an image of the object can be used.
[0072] Here, as shown in Figure 8, we assume a case where, at the stage when the partition wall 6 is formed, the amount of protrusion D of the partition wall 6 is measured by photographing the partition wall 6 from the third direction Z (i.e., the display surface side of the display device DSP) using the length measuring camera 100. In this case, since the upper part 62 of the partition wall 6 has a greater width than the lower part 61 (i.e., the shape of the partition wall 6 is overhanging), if, for example, the upper part 62 includes a layer made of a light-shielding metal material that does not transmit light (e.g., titanium), the length measuring camera 100 cannot photograph the side of the lower part 61 (i.e., the end of the lower part 61 in the first direction X or the second direction Y). In other words, in the example shown in Figure 8, it is possible to measure the length of the upper part 62 in the first direction X or the second direction Y (hereinafter referred to as the width of the upper part 62), but it is not possible to measure the amount of protrusion D of the partition wall 6.
[0073] Therefore, in this embodiment, as shown in Figure 9, the upper part 62 of the partition wall 6 is removed (blown away or melted away) using a laser processing device 200 configured to process metal materials by irradiating them with a laser. Then, the length of the lower part 61 of the partition wall 6 is measured by photographing it with a length measuring camera 100 in the first or second direction Y (hereinafter referred to as the width of the lower part 61). In this embodiment, the amount of protrusion D of the partition wall 6 (i.e., the distance between the side surface of the lower part 61 and the end of the upper part 62) is measured based on the width of the lower part 61 measured in this way and the width of the upper part 62 described above.
[0074] Incidentally, in general, in the manufacturing process of a display device DSP, a mother board is manufactured by forming multiple display panels on a mother board which is formed by forming multiple substrates 10 together, and a display device DSP is manufactured using each of the display panels cut from the mother board.
[0075] Figure 10 schematically shows a motherboard (mother substrate). As shown in Figure 10, the motherboard 300 has multiple panel areas 301 and a peripheral area 302. The size of the motherboard 300 is, for example, about 1500 mm × 950 mm, but is not limited to this.
[0076] Each of the multiple panel regions 301 is a region where a display panel is formed, and they are arranged in a matrix in the first direction X and the second direction Y. The peripheral region 302 is located around the multiple panel regions 301 and is a region that demarcates the multiple panel regions 301.
[0077] Here, the partition walls 6 (partition walls 6 having a lower part 61 and an upper part 62) arranged in multiple panel regions 301 are necessary for forming each subpixel SP in the process of forming a display panel used in the manufacture of a display device DSP. Therefore, as described above, it is not possible to remove the upper part 62 of the partition walls 6 arranged in multiple panel regions 301 using the laser processing device 200 in order to measure the amount of protrusion D of the partition walls 6.
[0078] Therefore, in this embodiment, as an inspection of the motherboard 300 described above, the protrusion amount D of the partition wall 6 is measured using the peripheral area 302 (for example, the area marked with an "x" in Figure 10). With this, even if the upper part 62 is removed in order to measure the protrusion amount D of the partition wall 6, a display panel used in the manufacture of a display device DSP can be properly formed.
[0079] The following describes the manufacturing method (manufacturing process) of the DSP display device according to this embodiment, with reference to Figure 11.
[0080] First, a mother substrate (hereinafter referred to as mother substrate 10 for convenience) is prepared by forming multiple substrates 10 together, and an insulating layer 11, a circuit layer 12, an insulating layer 13, ribs 5, and partition walls 6 (lower 61 and upper 62) are sequentially formed on the mother substrate 10 in the panel area 301 and the peripheral area 302.
[0081] Furthermore, the insulating layer 11, circuit layer 12, insulating layer 13, rib 5, and partition wall 6 are formed using the same process in the panel region 301 and the surrounding region 302.
[0082] As described above, once the partition wall 6 is formed, the upper part 62 of the partition wall 6 formed in the surrounding region 302 is removed using the laser processing device 200. As described above, the laser processing device 200 is configured to process metal materials by irradiating them with a laser, and the laser processing device 200 (the amount of energy of the laser it irradiates) is pre-adjusted to remove the upper part 62 of the partition wall 6. In this embodiment, it is preferable that only the upper part 62 of the partition wall 6 is removed by the laser processing device 200, but as described above, from the viewpoint of measuring the amount of protrusion D of the partition wall 6, the laser processing device 200 only needs to operate in such a way that at least the barrier layer 611 shown in Figure 4 (i.e., the part located directly above the rib 5 of the lower part 61 of the partition wall 6) is not removed.
[0083] According to this, by photographing the bulkhead 6, from which the upper part 62 has been removed in the surrounding area 302, with a length-measuring camera 100, the width of the lower part 61 of the bulkhead 6 can be measured.
[0084] In this embodiment, the amount of protrusion D of the partition wall 6 (i.e., the distance between the side surface of the lower part 61 and the end of the upper part 62) can be measured by calculating the difference between the width of the lower part 61 measured as described above and the width of the upper part 62 measured by photographing the partition wall 6 in which the upper part 62 has not been removed.
[0085] If the protrusion amount D of the partition wall 6 measured in this manner is appropriate, the display elements 20 of each sub-pixel SP are formed as described in Figures 5 to 7 above. Subsequently, the display panels formed in each of the panel regions 301 are cut from the motherboard 300, and the display device DSP is manufactured using the cut display panels.
[0086] In this embodiment, the protrusion amount D of the partition wall 6 corresponds to half the difference between the width of the lower part 61 and the width of the upper part 62, as measured using the length measuring camera 100 as described above. However, the protrusion amount D of the partition wall 6 may be automatically calculated by the length measuring camera 100 or an electronic device connected to the length measuring camera 100, or it may be calculated by a manager responsible for the manufacture of the display device DSP, etc., by referring to the width of the lower part 61 and the width of the upper part 62.
[0087] Furthermore, whether the measured protrusion amount D of the partition wall 6 is appropriate or not can be determined by the administrator or other person as described above. However, in order to assist the administrator in determining whether the protrusion amount D of the partition wall 6 is appropriate or not, a measuring camera 100 or electronic equipment connected to the measuring camera 100 may be used, for example, to output an alert when the measured protrusion amount D of the partition wall 6 does not fall within a predetermined range (i.e., the protrusion amount D is not appropriate).
[0088] Furthermore, the amount of protrusion D of the partition wall 6 measured in this embodiment may be the distance (length) between the first direction X and the second direction Y, or it may be the distance (length) of either the first direction X or the second direction Y.
[0089] Furthermore, although a detailed explanation will be omitted, the partition wall 6 in this embodiment is formed by, for example, performing anisotropic dry etching on the lower part 61 and the upper part 62, followed by isotropic wet etching. In this case, in this embodiment, the amount of protrusion D of the partition wall 6 is measured in order to suppress a decrease in the reliability of the display device DSP (display panel). However, if partition walls 6 with different amounts of protrusion D are formed in the panel area 301 and the peripheral area 302, the significance of measuring the amount of protrusion D in the peripheral area 302 is reduced.
[0090] Therefore, in this embodiment, in order to make the variation in the amount of etching when forming partition walls 6 in the panel region 301 and the peripheral region 302 the same (that is, to make the amount of protrusion D of partition walls 6 in multiple panel regions 301 the same as the amount of protrusion D of partition walls 6 in the peripheral region 302), partition walls 6 with the same pattern as partition walls 6 in the panel region 301 are formed in at least the areas marked with an "x" in the peripheral region 302. Specifically, in the panel region 301, partition walls 6 are formed with a pattern that demarcates sub-pixels SP, and similarly in the peripheral region 302, partition walls 6 are formed with the same pattern as the pattern that demarcates sub-pixels SP, for example, as shown in Figure 12.
[0091] In order to form a partition wall 6 having a similar shape in the panel region 301 and the peripheral region 302, it is preferable that the peripheral region 302 (the region where the protrusion amount D of the partition wall 6 is measured) has a width that partitions at least a number of pixels PX (sub-pixels SP). In the example shown in Figure 12, it is assumed that the partition wall 6 is formed in a pattern that partitions 6 × 6 = 36 pixels PX (sub-pixels SP1, SP2, and SP3) in the area marked with an "x" in the peripheral region 302. However, the partition wall 6 may also be formed in a pattern that partitions a number of pixels PX, such as 10 × 10 = 100 pixels, in the area marked with an "x". The ribs 5 in the peripheral region 302 may be formed in the same pattern as in the panel region 301, or in a different pattern from that of the panel region 301.
[0092] Furthermore, although this embodiment describes measuring the amount of protrusion D of the partition wall 6 formed in the peripheral region 302, it is preferable that the measurement of the amount of protrusion D of the partition wall 6 be performed in all of the regions marked with an "x" in Figure 10 while moving, for example, the length measuring camera 100 and the laser processing device 200. This is thought to improve the reliability of all display panels (and the display devices DSPs manufactured using them) formed in the multiple panel regions 301 of the motherboard 300.
[0093] However, in order to reduce the burden of measuring the protrusion amount D of the partition wall 6, the protrusion amount D of the partition wall 6 may be measured in a part of the area marked with an "x" in Figure 10. In this case, the protrusion amount D of the partition wall 6 may be measured in areas near the four corners of the motherboard 300 and in an area near the center of the motherboard 300.
[0094] Furthermore, in this embodiment, it is possible to measure the protrusion amount D of the partition wall 6 by removing the upper part 62 of the partition wall 6 formed in the peripheral region 302 using the laser processing device 200. However, when measuring the protrusion amount D of the partition wall 6, it is not necessary to remove all of the upper part 62 of the partition wall 6 formed in the area marked with an "x" within the peripheral region 302. Specifically, for example, as shown in Figure 13, if only the upper part 62 formed in a part of the area 400 of the area marked with an "x" within the peripheral region 302 is removed (only the area 400 is irradiated with a laser), and then the range encompassing the area 400 is photographed with the length measuring camera 100, the width D1 of the lower part 61 and the width D2 of the upper part 62 of the partition wall 6 can be measured in a single photograph.
[0095] As described above, in this embodiment, a lower electrode LE is formed on the base material 10, a rib 5 is formed to cover a part of the lower electrode LE, a partition wall 6 is formed having a lower part 61 positioned on the rib 5 and an upper part 62 protruding from the side surface of the lower part 61, the upper part 62 having at least a part of the partition wall 6 is removed, the width D1 (first width) of the lower part 61 and the width D2 (second width) of the upper part 62 of the partition wall 6 are measured, and the amount of protrusion D of the partition wall 6 (distance between the side surface of the lower part 61 and the end of the upper part 62) is measured based on the width D1 of the lower part 61 and the width D2 of the upper part 62.
[0096] In this embodiment, the upper part 62 of the partition wall 6 is formed of a metal material such as titanium, and it has been described that the upper part 62 is removed by a laser irradiated from, for example, a laser processing device 200. However, the removal of the upper part 62 may be achieved by other methods. Also, the width D1 of the lower part 61 and the width D2 of the upper part 62 have been described as being measured by, for example, taking a photograph with a length measuring camera 100. However, the measurement of the width D1 of the lower part 61 and the width D2 of the upper part 62 may be achieved by other methods.
[0097] In this embodiment, this configuration allows the DSP display device to be manufactured with an appropriate protrusion amount D of the partition wall 6, thereby suppressing a decrease in the reliability of the DSP display device.
[0098] In order to measure the protrusion amount D of the partition wall 6, it is conceivable to photograph the partition wall 6 from the side opposite to the side on which the display element 20 etc. of the base material 10 is arranged (i.e., the back side) using a length measuring camera 100. However, this embodiment is suitable for cases where it is not possible to photograph the partition wall 6 (measure the protrusion amount D of the partition wall 6) from the back side of the base material 10 in this manner.
[0099] In this embodiment, a motherboard substrate 10 is prepared having a plurality of panel areas 301 and peripheral areas 302 that demarcate the plurality of panel areas 301. Partition walls 6 are formed in both the plurality of panel areas 301 and the peripheral areas 302. The removal of the upper part 62 of the partition wall 6 and the measurement of the width D1 of the lower part 61 and the width D2 of the upper part 62 (i.e., the amount of protrusion D of the partition wall 6) are performed in the peripheral area 302. With this configuration, it is possible to measure the amount of protrusion D of the partition wall 6 without affecting the quality of the display device DSP (i.e., the display panel cut from the motherboard substrate 300 to manufacture the display device DSP).
[0100] If the protrusion amount D of the partition wall 6 measured as described above is appropriate, the display elements 20 of each color subpixel SP can be formed by repeating the following steps: forming an organic layer OR on the lower electrode LE, forming an upper electrode UE on the organic layer OR, forming a cap layer CP on the upper electrode, forming a sealing layer SE on the cap layer CP, forming a resist R on the sealing layer SE, and using the resist R as a mask to remove the sealing layer SE, cap layer CP, upper electrode UE, and organic layer OR.
[0101] Furthermore, when the manufacturing method for the display device DSP described in this embodiment is applied, the mother board 300 has a base material 10 having a plurality of panel areas 301 on which a display panel is formed and a peripheral area 302 that divides the plurality of panel areas 301, a lower electrode LE disposed on the base material 10, a rib 5 that covers a part of the lower electrode LE and divides the sub-pixel SP (pixel), and partition walls 6 disposed on the rib 5 in the plurality of panel areas 301 and the peripheral area 302. The partition walls 6 disposed in the plurality of panel areas 301 have a lower part 61 disposed on the rib 5 and an upper part 62 protruding from the side of the lower part 61, and the partition walls 6 (at least a part of them) disposed in the peripheral area 302 have a lower part 61 disposed on the rib 5 and do not have an upper part 62. In this embodiment, since a display panel with partition walls 6 having an appropriate protrusion amount D is formed on such a mother board 300 can be cut to manufacture the display device DSP, the reliability of the display device DSP can be improved.
[0102] Furthermore, in this embodiment, the partition walls 6 in the multiple panel regions 301 are formed with a pattern that demarcates the sub-pixels SP. In contrast, the partition walls 6 in the peripheral region 302 are formed with the same pattern as the partition walls 6 formed in the multiple panel regions 301 (i.e., they are formed as dummy patterns that mimic the sub-pixels SP). With this, since the partition walls 6 are formed by performing anisotropic dry etching followed by isotropic wet etching, it is possible to reduce the variation between the amount of etching when forming the partition walls 6 in the multiple panel regions 301 and the amount of etching when forming the partition walls 6 in the peripheral region 302. Therefore, by measuring the amount of protrusion D of the partition walls 6 formed in the peripheral region 302, it is possible to determine whether the partition walls 6 are properly formed in the panel region 301.
[0103] All methods for manufacturing a display device and a motherboard that can be implemented by a person skilled in the art by appropriately modifying the design based on the methods for manufacturing a display device and a motherboard described above as embodiments of the present invention also fall within the scope of the present invention, insofar as they encompass the gist of the present invention.
[0104] Within the scope of the spirit of the present invention, a person skilled in the art can conceive of various modifications, and such modifications are also understood to fall within the scope of the present invention. For example, modifications made by a person skilled in the art to the above-described embodiments, such as adding, deleting, or changing the design of components, or adding, omitting, or changing the conditions of processes, are also included within the scope of the present invention, as long as they retain the gist of the present invention.
[0105] Furthermore, any other effects and benefits brought about by the embodiments described above that are obvious from the description herein or that can be appropriately conceived by those skilled in the art are naturally considered to be brought about by the present invention. [Explanation of Symbols]
[0106] DSP...Display device, DA...Display area, NDA...Non-display area, PX...Pixel, SP, SP1, SP2, SP3...Sub-pixel, LE, LE1, LE2, LE3...Lower electrode, UE, UE1, UE2, UE3...Upper electrode, OR, OR1, OR2, OR3...Organic layer, SE, SE1, SE2, SE3...Sealing layer, 1...Pixel circuit, 2...Pixel switch, 3...Drive transistor, 4...Capacitor, 5...Rib, 6...Partition, 10...Substrate, 11...Insulating layer, 12...Circuit layer, 13...Insulating layer, 14...Resin layer, 15...Sealing layer, 16...Resin layer, 20...Display element, 61...Lower part, 62...Upper part, 100...Length measuring camera, 200...Laser processing device, 300...Mother board, 301...Panel area, 302...Peripheral area.
Claims
1. A lower electrode is formed on the substrate. A rib is formed to cover a portion of the lower electrode, A partition wall is formed having a lower part positioned on the rib and an upper part protruding from the side surface of the lower part. In at least a portion of the partition wall, the upper part is removed, The first width of the lower part of the partition wall and the second width of the upper part of the partition wall are measured. Based on the first and second widths, the distance between the lower side surface and the upper end is measured. The substrate has a plurality of panel regions on which a display panel is formed and a peripheral region that separates the plurality of panel regions. The partition wall is formed in both the plurality of panel areas and the peripheral area, The removal of the upper portion and the measurement of the first width, second width, and distance are performed in the surrounding area. A method for manufacturing a display device.
2. The upper part of the partition wall is formed of a metal material and is removed by a laser irradiated from a laser processing device, as described in claim 1.
3. The method for manufacturing a display device according to claim 2, wherein the first and second widths are measured by taking a photograph with a length measuring camera.
4. In the aforementioned plurality of panel regions, the partition wall is formed in a pattern that divides the pixels. In the aforementioned peripheral region, the partition wall is formed in the same pattern as the partition walls formed in the plurality of panel regions. A method for manufacturing a display device according to claim 1.
5. After the distance is measured, an organic layer is formed on the lower electrode. An upper electrode is formed on the aforementioned organic layer, A cap layer is formed on the upper electrode, A sealing layer is formed on the cap layer, A resist is formed on the aforementioned sealing layer. The resist is used as a mask to remove the sealing layer, the cap layer, the upper electrode, and the organic layer. A method for manufacturing a display device according to claim 1.
6. The method for manufacturing a display device according to claim 1, wherein the partition wall is formed by performing anisotropic dry etching followed by isotropic wet etching.
7. A substrate having a plurality of panel regions on which a display panel is formed and a peripheral region that separates the plurality of panel regions, A lower electrode placed on the substrate, A rib that covers a portion of the lower electrode and demarcates the pixel, The partition wall is positioned on the rib in the plurality of panel regions and the peripheral region. It has, The partition walls arranged in the plurality of panel regions have a lower portion positioned on the rib and an upper portion protruding from the side surface of the lower portion. The partition walls arranged in the aforementioned peripheral region consist of those having a lower part positioned on the ribs and having the upper part, and those having a lower part positioned on the ribs and not having the upper part. Motherboard.
8. The motherboard according to claim 7, wherein the upper part of the partition wall is formed of a metal material.
9. In the aforementioned plurality of panel regions, the partitions are arranged in a pattern that divides the pixels. In the aforementioned peripheral region, the partition walls are arranged in the same pattern as the partition walls arranged in the plurality of panel regions. The motherboard according to claim 7.
10. An organic layer placed on the lower electrode, An upper electrode is placed on the organic layer and is in contact with the lower part of the partition wall, A cap layer placed on the upper electrode, A sealing layer disposed on the cap layer and The motherboard according to claim 7, further comprising the above.
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