Compounds and methods for extreme ultraviolet lithography
The development of tin(II) cyclopentadienylide complexes addresses the need for effective precursors in EUV lithography and other applications, improving the efficiency and versatility of these processes.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- ENTEGRIS INC
- Filing Date
- 2023-06-29
- Publication Date
- 2026-05-08
AI Technical Summary
Current EUV lithography technologies lack effective precursors for atomic layer deposition and plasma chemical vapor deposition, and there is a need for compounds that can be used in EUV hard mask applications, as well as other applications such as PVC stabilizers, biocides, and catalysts for organic conversion.
The development of mixed ligand compounds, specifically tin(II) cyclopentadienylide complexes, which can be used as precursors for EUV lithography and in other applications, including EUV hard mask applications, PVC stabilizers, biocides, and catalysts for organic conversion.
The tin(II) cyclopentadienylide complexes provide efficient precursors for EUV lithography and other applications, enhancing the performance and versatility of these processes.
Smart Images

Figure 0007855784000030 
Figure 0007855784000031 
Figure 0007855784000032
Abstract
Description
[Technical Field]
[0001] This disclosure relates to the field of compounds and methods for extreme ultraviolet (EUV) lithography.
[0002] Priority Claim This disclosure claims priority to U.S. Provisional Patent Application No. 63 / 357,771, titled "COMPOUNDS AND PROCESSES FOR EXTREME ULTRAVIOLET LITHOGRAPHY" and filed 1 July 2023, which is incorporated herein by reference. [Background technology]
[0003] Extreme ultraviolet lithography is a photolithography technique that uses the extreme ultraviolet wavelength range to generate patterns by exposing a reflective photomask to UV light and reflecting it off a substrate covered with photoresist. [Overview of the project]
[0004] This disclosure includes the preparation of mixed ligand compounds such as tin(II) cyclopentadienylide complexes. The compounds of this disclosure can be used as precursors, for example, as atomic layer deposition (ALD) precursors for EUV lithography or plasma chemical vapor deposition (CVD) precursors. For example, the compounds of this disclosure can be used in EUV hard mask applications. The tin compounds can also be used in other applications, for example, as polyvinyl chloride (PVC) stabilizers, biocides, precursors for tin(IV) oxide coatings, and catalysts for organic conversion.
[0005] In some embodiments, this disclosure is, TIFF0007855784000001.tif50170[In the above formula, each R 2 These are, independently, hydrogen, C1-C4, or halides containing C1-C4. TIFF0007855784000002.tif42170{In the above formula, R 3 ~R7 is hydrogen or C1-C4] It includes a cyclopentadienyltin(II) compound of formula (I) containing
[0006] In some embodiments, the present disclosure, each R 2 is independently methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, t-butyl, or sec-butyl group.
[0007] In some embodiments, the present disclosure, each R 2 is a methyl group.
[0008] In some embodiments, the present disclosure, each R 2 is a C1-C4 alkyl group.
[0009] In some embodiments, the present disclosure, C1-C4 is branched or unbranched.
[0010] In some embodiments, the present disclosure, C1-C4 is substituted or unsubstituted.
[0011] In some embodiments, the present disclosure, each R 3 ~R 7 is hydrogen.
[0012] In some embodiments, the present disclosure, each R 2 is hydrogen, and each R<00000 \ 10>~R 7 is hydrogen.
[0013] In some embodiments, the present disclosure, Formula (I): TIFF0007855784000003.tif50170[In the above formula, each R 2 is independently hydrogen, C1-C4, or a halide containing a C1-C4 group, TIFF0007855784000004.tif42170{In the above formula, R 3 ~R 7 [It is hydrogen or C1-C4.] A method for forming a cyclopentadienylidotin(II) compound, [Sn(N(R 2 The method includes contacting )2)2]2 with Cp2Sn or CpH.
[0014] In some embodiments, this disclosure includes [Sn(N(R 2 )2)2]2 is dissolved in tetrahydrofuran before the contact step.
[0015] In some embodiments, this disclosure is R 2 However, independently, this includes being a methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, t-butyl, or sec-butyl group.
[0016] In some embodiments, the disclosure includes dissolving Cp2Sn or CpH in tetrahydrofuran prior to the contact step.
[0017] In some embodiments, this disclosure is, Formula (II): TIFF0007855784000005.tif55170[In the above formula, each R 1 These are, independently, hydrogen, C1-C4, or halides containing C1-C4. TIFF0007855784000006.tif42170{In the above formula, R 3 ~R 7 [It is hydrogen or C1-C4.] It contains the cyclopentadienylidotin(II) compound.
[0018] In some embodiments, this disclosure applies to each R 1 However, independently, this includes being a methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, t-butyl, or sec-butyl group.
[0019] In some embodiments, this disclosure applies to each R 1 This includes the fact that it is a methyl group.
[0020] In some embodiments, this disclosure applies to each R 1 This includes the fact that the alkyl group is a C1-C4 alkyl group.
[0021] In some embodiments, the disclosure includes the fact that C1-C4 are branched or unbranched.
[0022] In some embodiments, the disclosure includes the case where C1-C4 are substituted or unsubstituted.
[0023] In some embodiments, this disclosure applies to each R 3 ~R 7 This includes the fact that it is hydrogen.
[0024] In some embodiments, this disclosure applies to each R 1 is hydrogen, and each R 3 ~R 7 This includes the fact that it is hydrogen.
[0025] In some embodiments, this disclosure is, Formula (II): TIFF0007855784000007.tif56170[In the above formula, each R 1 These are, independently, halides containing hydrogen, C1-C4, or C1-C4 groups. TIFF0007855784000008.tif41170{In the above formula, R 3 ~R 7 [It is hydrogen or C1-C4.] A method for forming a cyclopentadienylidotin(II) compound, [Sn(O(R 1 The method includes bringing ))2]2 into contact with Cp2Sn.
[0026] In some embodiments, this disclosure is [Sn(O(R 1 ))2]2 is dissolved in tetrahydrofuran before the contact step.
[0027] In some embodiments, this disclosure is R 1 However, independently, this includes being a methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, t-butyl, or sec-butyl group.
[0028] In some embodiments, the disclosure includes dissolving Cp2Sn in tetrahydrofuran prior to the contact step.
[0029] Some embodiments of the present disclosure are described herein merely as examples with reference to the accompanying drawings. With particular reference here to the drawings, it is emphasized that the embodiments shown are illustrative and for illustrative purposes only. In this regard, the description made with reference to the drawings will make it clear to those skilled in the art how embodiments of the present disclosure may be carried out. [Brief explanation of the drawing]
[0030] [Figure 1] Non-limiting embodiments of the method 100 for the synthesis of cyclopentadienylidotin(II) amide described herein are shown. [Figure 2] Non-limiting embodiments of the method 200 for the synthesis of cyclopentadienylidotin(II) alkoxide described herein are shown. [Figure 3] This specification presents a non-limiting example of method 300 for synthesizing cyclopentadienyl tin(II) amides using Cp2Sn as described herein. [Figure 4] The solid structure of [CpSn(N(CH3)2)]2, determined by X-ray crystallography, is shown. [Figure 5] This specification presents a non-limiting example of Method 600 for synthesizing cyclopentadienyl tin(II) amide using the CpH described herein. [Modes for carrying out the invention]
[0031] Among these disclosed advantages and improvements, other objectives and benefits of this disclosure will become apparent from the following description in conjunction with the accompanying drawings. Detailed embodiments of this disclosure are disclosed herein. However, it should be understood that the disclosed embodiments are merely illustrative examples of this disclosure, which may be embodied in various forms. Furthermore, each of the examples given with respect to the various embodiments of this disclosure is intended to be illustrative and not limiting.
[0032] All prior patents and publications referenced herein are incorporated in their entirety by reference.
[0033] Throughout the specification and claims, the following terms have the meaning expressly as relating to this specification unless the context clearly indicates otherwise. The phrases “in one embodiment,” “in an embodiment,” and “in several embodiments” as used herein may refer to the same embodiment, but not necessarily the same embodiment. Furthermore, the phrases “in another embodiment” and “in several other embodiments” as used herein may refer to different embodiments, but not necessarily different embodiments. All embodiments of this disclosure are intended to be combined without departing from the scope or spirit of this disclosure.
[0034] As used herein, the term “based on” is not exclusive and may allow for the use of additional factors not explicitly stated unless otherwise explicitly indicated by the context. Furthermore, throughout this specification, the meanings of “a,” “an,” and “the” include multiple referents. The meaning of “in” includes “in” and “on.”
[0035] This disclosure relates to compounds, including the preparation of mixed ligand compounds. The mixed ligand compounds include tin(II) cyclopentadienylide complexes comprising cyclopentadienylide amide and cyclopentadienylide alkoxide. The compounds of this disclosure can be used as atomic layer deposition (ALD) precursors for EUV lithography. For example, the compounds of this disclosure can be used in EUV hard mask applications. The tin compounds can also be used in other applications, such as polyvinyl chloride (PVC) stabilizers, biocides, precursors for tin(IV) oxide coatings, and catalysts for organic conversion.
[0036] Figure 1 shows non-limiting embodiments of the method 100 for the synthesis of cyclopentadienylidotin(II)amide described herein. In some embodiments, the disclosure refers to [Sn(N(R 2 The method includes contacting [Sn(N(R)2)2 with Cp2Sn 110 or CpH 120. In some embodiments, the method includes contacting [Sn(N(R)2)2 with Cp2Sn 110 or CpH 120 before the contact step. 2 The method includes dissolving )2)2]2 in tetrahydrofuran (THF). In some embodiments, method 100 includes dissolving Cp2Sn or CpH in tetrahydrofuran (THF) before the contact step.
[0037] In some embodiments, using Cp2Sn 110 in method 100 is [Sn(N(R 2 This may include filling a container (e.g., a vial) with [Sn(N(R)2)2]2 and dissolving it in tetrahydrofuran (THF). In another container, Cp2Sn can be added and dissolved in tetrahydrofuran (THF). The [Sn(N(R)2)2]2 dissolved in THF is then added. 2 A solution containing )2)2]2 can be added to a solution containing Cp2Sn dissolved in THF. [Sn(N(R 2A combined solution of )2)2]2, Cp2Sn, and tetrahydrofuran (THF) can be stirred for a certain period of time. The combined solution can be stirred for a long period of time, for example, 1 to 12 hours. For example, the combined solution can be stirred for more than 1 hour, more than 3 hours, more than 6 hours, more than 9 hours, less than 12 hours, less than 9 hours, less than 6 hours, or less than 3 hours. After stirring the combined solution, the combined solution can then be dried. In some examples, a solid mass can be obtained by drying the combined solution under reduced pressure. The reduced pressure can be selected from a range of reduced pressure, for example, 100 milliliters to 760 tor (atm). For example, the reduced pressure may be more than 100 milliliters, more than 1 tor, more than 10 tor, more than 100 tor, more than 300 tor, more than 500 tor, more than 700 tor, less than 760 tor, less than 700 tor, less than 500 tor, less than 300 tor, less than 100 tor, less than 10 tor, or less than 1 tor. In some examples, the stirred solution can be dried under dynamic vacuum, including the reduced pressure values described herein. X-ray quality crystals can be grown by slowly evaporating solutions such as concentrated benzene (C6D6) solution, tetrahydrofuran (THF), diethyl ether (Et2O), or NMR solvents containing toluene (PhMe).
[0038] In some embodiments, using CpH 120 in Method 100 may involve diluting cyclopentadiene with tetrahydrofuran (THF). The solution of cyclopentadiene containing tetrahydrofuran (THF) is then mixed with THF and [Sn(N(R 2 [Sn(N(R 2A solution of 2)2, CpH, and tetrahydrofuran (THF) can be stirred for a certain period of time. The combined solution can be stirred for a long period of time, for example, 1 to 12 hours. For example, the combined solution can be stirred for more than 1 hour, more than 3 hours, more than 6 hours, more than 9 hours, less than 12 hours, less than 9 hours, less than 6 hours, or less than 3 hours. After stirring the combined solution, the combined solution can then be dried. In some cases, a solid mass can be obtained by drying the stirred solution under reduced pressure. For example, the reduced pressure can be more than 100 milliliters, more than 1 tor, more than 10 tor, more than 100 tor, more than 300 tor, more than 500 tor, more than 700 tor, less than 760 tor, less than 700 tor, less than 500 tor, less than 300 tor, less than 100 tor, less than 10 tor, or less than 1 tor. In some cases, the stirred solution can be dried under dynamic vacuum, including the reduced pressure values described herein.
[0039] In some embodiments, using Cp2Sn 110 or CpH 120 in Method 100 of the present disclosure is equivalent to formula (I): Contains the cyclopentadienylidotin(II) compound TIFF0007855784000009.tif49170.
[0040] In some embodiments, each R 2 These are independently hydrogen or C1-C4.
[0041] In some embodiments, each R 2 R is independently a methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, t-butyl, or sec-butyl group. In some embodiments, each R 2 is a methyl group. In some embodiments, each R 2 These are C1-C4 alkyl groups.
[0042] In some embodiments, cyclopentadienylide (Cp) is represented by formula (1): It has TIFF0007855784000010.tif43170.
[0043] In some embodiments, R 3 ~R 7 is hydrogen or C1-C4. In some embodiments, each R 3 ~R 7 R is independently a methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, t-butyl, or sec-butyl group. In some embodiments, each R 2 It is a methyl group.
[0044] In some embodiments, C1-C4 are branched or unbranched. In some embodiments, C1-C4 are substituted or unsubstituted.
[0045] In some embodiments, each R 2 is a methyl group, and each R 3 ~R 7 is hydrogen. In some embodiments, each R 2 is hydrogen, and each R 3 ~R 7 It is hydrogen.
[0046] In some embodiments, the disclosure involves forming a cyclopentadienylidotin(II) compound of formula (I). In some embodiments, each R 2 These are, independently, halides containing hydrogen, C1-C4, or C1-C4 groups.
[0047] In some embodiments, cyclopentadienylide (Cp) has formula (1). In some embodiments, R 3 ~R 7 is hydrogen or C1-C4. In some embodiments, method 100 is [Sn(N(R 2 The method comprises forming a cyclopentadienylidotin(II) compound of formula (I) by contacting [Sn(N(R)2]2 with Cp2Sn or CpH. In some embodiments, method 100 includes [Sn(N(R)2]2 before the contact step. 2The method includes dissolving )2)2]2 in tetrahydrofuran (THF). In some embodiments, method 100 includes dissolving Cp2Sn or CpH in tetrahydrofuran (THF) before the contact step.
[0048] Figure 2 shows non-limiting embodiments of the method 200 for the synthesis of cyclopentadienylidotin(II) alkoxide described herein. In some embodiments, the disclosure includes [Sn(O(R 1 The method includes bringing [Sn(O(R)2]2 into contact with Cp2Sn. In some embodiments, the method includes bringing [Sn(O(R)2]2 into contact with Cp2Sn before the contact step. 1 ))2]2 includes dissolving in tetrahydrofuran (THF). In some embodiments, method 200 includes dissolving Cp2Sn in tetrahydrofuran (THF) before the contact step.
[0049] In some embodiments, the use of Cp2Sn in method 200 of the present disclosure is given by formula (II): Contains the cyclopentadienylidotin(II) compound TIFF0007855784000011.tif55170.
[0050] In some embodiments, each R 1 These are, independently, hydrogen, C1-C4, or halides containing C1-C4.
[0051] In some embodiments, each R 1 R is independently a methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, t-butyl, or sec-butyl group. In some embodiments, each R 1 is a methyl group. In some embodiments, each R 1 R is a C1-C4 alkyl group. In some embodiments, each R 1 is a C1-C4 alkyl group containing at least one halide (e.g., fluorine (F), chlorine (Cl), bromine (Br), or iodine (I)). For example, R 1It may be -OCH2CF3 (trifluoroethoxide).
[0052] In some embodiments, cyclopentadienylide (Cp) is represented by formula (1): It has TIFF0007855784000012.tif41170.
[0053] In some embodiments, R 3 ~R 7 is hydrogen or C1-C4. In some embodiments, each R 3 ~R 7 R is independently a methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, t-butyl, or sec-butyl group. In some embodiments, each R 1 It is a methyl group.
[0054] In some embodiments, C1-C4 are branched or unbranched. In some embodiments, C1-C4 are substituted or unsubstituted.
[0055] In some embodiments, each R 1 is a methyl group, and each R 3 ~R 7 is hydrogen. In some embodiments, each R 1 is hydrogen, and each R 3 ~R 7 It is hydrogen.
[0056] In some embodiments, the disclosure involves forming a cyclopentadienylidotin(II) compound of formula (II). In some embodiments, each R 1 These are, independently, halides containing hydrogen, C1-C4, or C1-C4 groups.
[0057] In some embodiments, cyclopentadienylide (Cp) has formula (1). In some embodiments, R 3 ~R 7is hydrogen or C1-C4. In some embodiments, method 200 1 comprises forming a cyclopentadienylidene tin(II) compound of formula (II) by contacting [Sn(O(R 1 ))2]2 with Cp2Sn. In some embodiments, method 200 comprises dissolving [Sn(O(R
Examples
[0058] Example 1
[0059] Figure 3 shows a non-limiting example of a method 3,000 for synthesizing cyclopentadienyl tin(II) amide using Cp2Sn described herein.
[0060] [Sn(N(CH3)2)2]2 (1.0 g, 3.98 mmol) was placed in an amber 40 mL vial and dissolved in tetrahydrofuran (10 mL). Cp2Sn was placed in another amber 40 mL vial equipped with a magnetic stir bar and dissolved in THF (10 mL). The [Sn(N(CH3)2)2]2 solution was added to the Cp2Sn solution with stirring over 5 minutes. The resulting pale yellow solution was stirred at room temperature overnight. The next day, the pale yellow solution was dried under reduced pressure to obtain [CpSn(N(CH3)2)]2 as an off-white / yellow solid (mass: 1.63 g, yield: 89.5%). X-ray quality crystals were grown by slowly evaporating a concentrated C6D6 solution. 1 H-NMR (400 MHz, d8-THF, 298 K): 2.65 (s, 6H); 2.73 (s, 6H); 6.12 (s, 10H) ppm; 13 C{ 1 H}-NMR (100 MHz, d8-THF, 298 K): 44.06 ppm; 119 Sn{ 1 H}-NMR (149 MHz, d8-THF, 298 K): -287.3, -306.12 ppm.
[0061] Figure 4 shows the solid structure of [CpSn(N(CH3)2)]2 determined by X-ray crystallography.
[0062] TIFF0007855784000013.tif175170
[0063] Example 2
[0064] Figure 5 shows a non-limiting example of method 600 for synthesizing cyclopentadienyltin(II) amide using CpH described herein.
[0065] Cyclopentadiene (0.158 g, 2.40 mmol) was diluted with 3 mL of tetrahydrofuran and added dropwise over 5 minutes to a stirred solution of 3 mL of THF of [Sn(N(CH3)2)2]2 (0.500 g, 1.20 mmol), and the resulting pale yellow solution was stirred overnight. The next day, the volatile substances were removed under reduced pressure to obtain [CpSn(N(CH3)2)]2 as a pale yellow solid. Collected in a d8-THF solution of the product 1 H-, 13 C- and 119 - Sn-NMR is consistent with a combination of Cp2Sn and [Sn(N(CH3)2)2]2.
[0066] Aspect
[0067] The following various aspects will be described. It should be understood that any one or more of the features described in the following aspects can be combined with any one or more of the other aspects.
[0068] Aspect 1. TIFF0007855784000014.tif49170[In the above formula, each R 2 is independently hydrogen, C1-C4, or a halide containing C1-C4, TIFF0007855784000015.tif40170{In the above formula, R 3 ~R 7[It is hydrogen or C1-C4.] A cyclopentadienylidotin(II) compound of formula (I) containing .
[0069] Appearance 2. Each R 2 The compound according to embodiment 1, wherein the group is independently methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, t-butyl, or sec-butyl.
[0070] Approval 3: Each R 2 The compound according to embodiment 1, wherein the group is a methyl group.
[0071] Appearance 4: Each R 2 The compound according to embodiment 1, wherein the alkyl group is a C1-C4 alkyl group.
[0072] Embodiment 5: A compound according to any one of Embodiments 1 to 4, wherein C1 to C4 are branched or unbranched.
[0073] Embodiment 6. The compound according to any one of Embodiments 1 to 5, wherein C1 to C4 are substituted or unsubstituted.
[0074] Appearance 7: Each R 3 ~R 7 A compound according to any one of embodiments 1 to 6, wherein the compound is hydrogen.
[0075] Appearance 8: Each R 2 is hydrogen, and each R 3 ~R 7 The compound according to embodiment 1, wherein the compound is hydrogen.
[0076] Appearance 9. Formula (I): TIFF0007855784000016.tif49170[In the above formula, each R 2 These are, independently, halides containing hydrogen, C1-C4, or C1-C4 groups. TIFF0007855784000017.tif41170{In the above formula, R 3 ~R 7 [It is hydrogen or C1-C4.] A method for forming a cyclopentadienylidotin(II) compound, [Sn(N(R 2 )2)2]2 includes contacting Cp2Sn or CpH, method.
[0077] Embodiment 10: Before the contact process [Sn(N(R 2 The method according to embodiment 9, wherein )2)2]2 is dissolved in tetrahydrofuran.
[0078] Appearance 11.R 2 The method according to embodiment 9 or embodiment 10, wherein the group is independently methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, t-butyl, or sec-butyl.
[0079] Embodiment 12: The method according to any one of Embodiments 9 to 11, wherein Cp2Sn or CpH is dissolved in tetrahydrofuran before the contact step.
[0080] Appearance 13. Formula (II): TIFF0007855784000018.tif55170[In the above formula, each R 1 These are, independently, hydrogen, C1-C4, or halides containing C1-C4. TIFF0007855784000019.tif41170{In the above formula, R 3 ~R 7 [It is hydrogen or C1-C4.] A cyclopentadienylidotin(II) compound.
[0081] Appearance 14. Each R 1 The compound according to embodiment 13, wherein the group is independently methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, t-butyl, or sec-butyl.
[0082] Appearance 15: Each R 1 The compound according to embodiment 13, wherein the group is a methyl group.
[0083] Appearance 16: Each R 1The compound according to embodiment 13, wherein the alkyl group is a C1-C4 alkyl group.
[0084] Embodiment 17: A compound according to any one of Embodiments 13 to 16, wherein C1 to C4 are branched or unbranched.
[0085] Embodiment 18. The compound according to any one of Embodiments 13 to 17, wherein C1 to C4 are substituted or unsubstituted.
[0086] Appearance 19: Each R 3 ~R 7 A compound according to any one of embodiments 13 to 18, wherein is hydrogen.
[0087] Appearance 20: Each R 1 is hydrogen, and each R 3 ~R 7 The compound according to embodiment 13, wherein the compound is hydrogen.
[0088] Appearance 21. Formula (II): TIFF0007855784000020.tif54170[In the above formula, each R 1 These are, independently, halides containing hydrogen, C1-C4, or C1-C4 groups. TIFF0007855784000021.tif40170{In the above formula, R 3 ~R 7 [It is hydrogen or C1-C4.] A method for forming a cyclopentadienylidotin(II) compound, [Sn(O(R 1 ))2]2 includes contacting Cp2Sn, method.
[0089] Embodiment 22: Before the contact process [Sn(O(R 1 The method according to embodiment 21, wherein 2)2 is dissolved in tetrahydrofuran.
[0090] Appearance 23.R 1The method according to embodiment 21 or embodiment 22, wherein the group is independently methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, t-butyl, or sec-butyl.
[0091] Embodiment 24: The method according to any one of Embodiments 21 to 23, wherein Cp2Sn is dissolved in tetrahydrofuran before the contact step.
[0092] In particular, it should be understood that modifications to the constituent materials and the shape, size, and arrangement of components used may be made in detail without departing from the scope of this disclosure. This specification and the embodiments described herein are examples, and the true scope and spirit of this disclosure are indicated by the appended claims.
Claims
1. [In the above formula, each R 2 These are, independently, hydrogen, C 1 ~C 4 A C1-C4 alkyl group containing an alkyl group or at least one halide, (In the above formula, R 3 ~R 7 is hydrogen or C 1 ~C 4 (It is an alkyl group.) A cyclopentadienylidotin(II) compound of formula (I) containing .
2. Equation (I): [In the above formula, each R 2 is independently hydrogen, C 1 to C 4 alkyl group, or a C1-C4 alkyl group containing at least one halide, (In the above formula, R 3 ~R 7 is hydrogen or C 1 ~C 4 (It is an alkyl group.) A method for forming a cyclopentadienylidotin(II) compound, [Sn(N(R 2 ) 2 ) 2 ] 2 to Cp 2 Including contact with Sn or CpH, method.
3. Before the contact process [Sn(N(R 2 ) 2 ) 2 ] 2 The method according to claim 2, wherein the substance is dissolved in tetrahydrofuran.
4. Formula (II): [In the above formula, each R 1 These are, independently, hydrogen, C 1 ~C 4 A C1-C4 alkyl group containing an alkyl group or at least one halide, (In the above formula, R 3 ~R 7 is hydrogen or C 1 ~C 4 (It is an alkyl group.) A cyclopentadienylidotin(II) compound.
5. Formula (II): [In the above formula, each R 1 These are, independently, hydrogen, C 1 ~C 4 A C1-C4 alkyl group containing an alkyl group or at least one halide, (In the above formula, R 3 ~R 7 is hydrogen or C 1 ~C 4 (It is an alkyl group.) A method for forming a cyclopentadienylidotin(II) compound, [Sn(O(R 1 )) 2 ] 2 to Cp 2 Including contact with Sn, method.
Citation Information
Patent Citations
Chemical vapor deposition raw material, method for manufacturing tin containing thin film and method for manufacturing tin oxide thin film
JP2021025121A
Semiconductor device production method and pattern formation method
JP2022013909A
Organometallic compounds for the deposition of high purity tin oxide and dry etching of the tin oxide films and deposition reactors
WO2021038523A1
Atomic layer deposition method of metal (II), (0), or (IV) containing film layer
WO2021058986A1