Semiconductor manufacturing equipment

Abstract

To provide a semiconductor manufacturing device and a manufacturing method of the semiconductor manufacturing device, capable of suppressing a temperature increase in a device by devising a shape of a terminal.SOLUTION: A semiconductor manufacturing device of the present disclosure, comprises: a semiconductor module having a semiconductor element; a sealing material that seals the semiconductor module; and a second terminal that is arranged to the outside of the sealing material. The semiconductor module comprises a first terminal that is electrically connected to a semiconductor element, and is extended to the outside of the sealing material. The first terminal is bonded to the second terminal in the outside of the sealing material. In the second terminal, a thickness of a direction vertical to a bonding surface of the boding is a thickness of the second terminal, and in an extension part where the first terminal is extended from the sealing material, when the thickness of the direction vertical to the bonding surface of the bonding is the thickness of the first terminal, the thickness of the second terminal is thicker than that of the first terminal.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present disclosure relates to a semiconductor manufacturing apparatus and a method for manufacturing a semiconductor manufacturing apparatus.

Background Art

[0002] Patent Document 1 discloses a technique for suppressing the terminal temperature during energization by changing the width of a terminal protruding from a sealing resin body that seals a semiconductor element.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in the above method of changing the width of the terminal, there is a limit to the effect of reducing the terminal temperature due to the constraints in the thickness direction of the terminal.

[0005] A first object of the present disclosure is to provide a semiconductor manufacturing apparatus capable of suppressing the temperature rise of the apparatus by devising the shape of a terminal in order to solve the above problems.

[0006] Another object of the present disclosure is to provide a method for manufacturing a semiconductor manufacturing apparatus capable of suppressing the temperature rise of the apparatus by devising the shape of a terminal.

Means for Solving the Problems

[0007] A first aspect of the present disclosure includes a semiconductor module having a semiconductor element, a sealing material that seals the semiconductor module, and a second terminal disposed outside the sealing material, and is provided with The semiconductor module comprises a first terminal electrically connected to the semiconductor element and extending outside the encapsulating material, The first terminal is joined to the second terminal outside the sealing material. In the second terminal, the thickness in the direction perpendicular to the joining surface of the joint is defined as the thickness of the second terminal. In the extended portion of the first terminal that extends from the sealing material, the thickness in the direction perpendicular to the joining surface of the joint is defined as the thickness of the first terminal. The thickness of the second terminal is greater than the thickness of the first terminal. Ku, The second terminal is U-shaped with a portion cut off above the first terminal. It is preferable that the equipment be a semiconductor manufacturing device.

[0008] Furthermore, a second embodiment includes a semiconductor module having a semiconductor element, A sealing material for sealing the aforementioned semiconductor module, A second terminal located outside the sealing material, Equipped with, The semiconductor module comprises a first terminal electrically connected to the semiconductor element and extending outside the encapsulating material, The first terminal is joined to the second terminal outside the sealing material. In the extended portion of the first terminal that extends from the sealing material, The length from the boundary with the sealing material to the tip is defined as the length of the first terminal. The width of the boundary portion in a direction horizontal to the direction of the length and perpendicular to the direction of the length is defined as the width of the first terminal. The length of the first terminal is shorter than the width of the first terminal. Ku, The second terminal is U-shaped with a portion cut off above the first terminal. It is preferable that the equipment be a semiconductor manufacturing device. [Effects of the Invention]

[0010] The first to the first of the disclosures two According to this embodiment, it is possible to provide a semiconductor manufacturing apparatus and a method for manufacturing a semiconductor manufacturing apparatus that can suppress the temperature rise of the apparatus by devising the shape of the terminals.

Brief Description of the Drawings

[0011] [Figure 1] FIG. 7 is a top view of a semiconductor manufacturing apparatus according to Embodiment 1 of the present disclosure. [Figure 2] FIG. 10 is a cross-sectional view of a semiconductor module mounted on a semiconductor manufacturing apparatus according to Embodiment 1 of the present disclosure. [Figure 3] FIG. 13 is a side view of a semiconductor manufacturing apparatus according to Embodiment 1 of the present disclosure. [Figure 4] FIG. 16 is a top view of a semiconductor manufacturing apparatus according to Embodiments and 3 of the present disclosure. [Figure 5] FIG. 19 is a side view of a semiconductor manufacturing apparatus according to Embodiments 2 and 3 of the present disclosure. [Figure 6] FIG. 22 is a top view of a semiconductor manufacturing apparatus according to Embodiment 4 of the present disclosure. [Figure 7] FIG. 25 is a side view of a semiconductor manufacturing apparatus according to Embodiment 4 of the present disclosure. [Figure 8] FIG. 28 is a side view of a semiconductor manufacturing apparatus according to Embodiment 5 of the present disclosure. [Figure 9] FIG. 31 is a top view of a semiconductor manufacturing apparatus according to Embodiment 6 of the present disclosure. [Figure 10] FIG. 34 is a diagram showing a manufacturing method of a semiconductor manufacturing apparatus according to Embodiment 7 of the present disclosure. [Figure 11] FIG. 37 is a diagram showing a manufacturing method of a semiconductor manufacturing apparatus according to Embodiment 8 of the present disclosure. [Figure 12] FIG. 40 is a schematic diagram in the case of performing laser bonding by irradiating a beam from the side of the second terminal according to Embodiment 8 of the present disclosure.

Embodiments for Carrying Out the Invention

[0012] Embodiment 1 FIG. 1 is a top view of a semiconductor manufacturing apparatus 100 according to Embodiment 1 of the present disclosure. The semiconductor manufacturing apparatus 100 includes a semiconductor module 110, a sealing material 140, and a plurality of second terminals 120.

[0013] The encapsulant 140 encapsulates the semiconductor module 110. The material of the encapsulant 140 is preferably one that can improve the reliability of the semiconductor module 110; for example, a thermosetting resin material is used. As for the encapsulation method, for example, the transfer molding method is used.

[0014] The semiconductor module 110 is sealed with a encapsulating material 140. The semiconductor module 110 has a plurality of first terminals 130. The first terminals 130 are terminals for electrically connecting the semiconductor module 110 to second terminals 120. The first terminals 130 extend outside the encapsulating material 140 and are joined to the second terminals 120 outside the encapsulating material 140. By joining the terminals outside the encapsulating material 140, self-heating by these terminals when energized can be suppressed, and the temperature rise of the semiconductor manufacturing apparatus 100 can be suppressed. Laser welding is used for joining.

[0015] Furthermore, the first terminal 130 is broadly divided into a main terminal and a signal terminal. The main terminal is electrically connected to the emitter electrode or collector electrode of the semiconductor element 111 provided in the semiconductor module 110. On the other hand, the signal terminal is electrically connected to the signal input section of the semiconductor element 111. The signal input section is, for example, a gate electrode. For the main terminal and the signal terminal, for example, a copper material with a thickness of 0.64 mm can be used.

[0016] The second terminal 120 is located outside the encapsulating material 140 and is joined to the first terminal 130 of the semiconductor module 110. The second terminal 120 is preferably made of a material with a high heat capacity, such as copper.

[0017] Furthermore, Figure 1 shows the joint surface 150 of the first terminal 130 and the second terminal 120 with a dotted outline.Hereafter, the direction perpendicular to the joint surface 150 will be defined as the thickness direction of the first terminal 130 and the second terminal 120.In addition, Figure 1 shows the boundary portion 160 between the first terminal 130 and the sealing material 140 with a dotted line.Hereafter, the direction perpendicular to the boundary portion 160 will be defined as the length direction of the first terminal 130 and the second terminal 120.Furthermore, the direction horizontal to the boundary portion 160 and perpendicular to the length direction will be defined as the width direction of the first terminal 130 and the second terminal 120.In addition, the cross-sections of the first terminal 130 and the second terminal 120 when the dotted line indicating the boundary portion 160 in Figure 1 is cut perpendicular to the plane of the paper will be defined as the cross-sections of the first terminal 130 and the second terminal 120, respectively.Note that this point is common to all embodiments described below.

[0018] Figure 2 is a cross-sectional view of a semiconductor module 110 mounted on a semiconductor manufacturing apparatus 100 according to Embodiment 1 of this disclosure. The semiconductor elements 111 are, for example, Si RC-IGBTs (Reverse Conducting Insulated Gate Bipolar Transistors) and SiC MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors).

[0019] Furthermore, the semiconductor element 111 is not limited to being made of silicon, but may also be made of a wide-bandgap semiconductor with a larger bandgap than silicon. Examples of wide-bandgap semiconductors include silicon carbide, gallium nitride-based materials, or diamond. Semiconductor elements made of such wide-bandgap semiconductors can be miniaturized because they have high dielectric strength and allowable current density. By using these miniaturized semiconductor elements, the semiconductor manufacturing apparatus 100 incorporating these semiconductor elements can also be miniaturized and highly integrated. In addition, because the semiconductor elements have high heat resistance, the heat sink fins can be miniaturized and the water-cooled section can be air-cooled, allowing for further miniaturization of the semiconductor manufacturing apparatus 100. Furthermore, because the semiconductor elements have low power loss and high efficiency, the semiconductor manufacturing apparatus 100 can be made more efficient. It is desirable that all of the semiconductor elements 111 are made of wide-bandgap semiconductors, but it is also acceptable if at least one of them is made of a wide-bandgap semiconductor, and the effects described in this embodiment can be obtained. This point is common to all the following embodiments as well.

[0020] The bonding material 112 is placed between the semiconductor element 111 and the metal pattern 113, between the semiconductor element 111 and the first terminal 130, and between the first terminal 130 and the metal pattern 113. The bonding material 112 is preferably made of a material with high electrical and thermal conductivity. For example, lead-free solder, in addition to the above properties, acts as a buffer to reduce stress, and its use can improve the reliability of the semiconductor manufacturing apparatus 100. Sintered silver can also be used.

[0021] In the heat dissipation design of the metal pattern 113, heat dissipation can be improved by using copper, which has high thermal conductivity. For example, by using 3 mm thick copper, heat can be diffused perpendicular to the thickness direction, allowing for efficient heat dissipation. However, the thickness is not limited to this, and 0.8 mm or 0.25 mm thick copper may also be used.

[0022] The insulating layer 114 is placed between the metal pattern 113 and the metal member 115. By using an insulating layer 114 made of a resin that is resistant to deformation, the occurrence of cracks can be suppressed even when minute deformation of the member occurs due to heat cycles or the like. Furthermore, by using a material with high thermal conductivity, the heat dissipation from the metal pattern 113 to the metal member 115 via the insulating layer 114 can be improved, and the temperature rise of the semiconductor manufacturing apparatus 100 can be suppressed. The insulating layer 114 is, for example, a resin having a thermal conductivity of 10 W / m·K or higher that contains a high thermal conductivity filler. Note that the material of the insulating layer 114 is not limited to resin, and any of AlN, Al2O3, or Si3N4 may be used.

[0023] In the heat dissipation design of the metal component 115, heat dissipation can be improved by using copper, which has high thermal conductivity. For example, copper foil with a thickness of 0.105 mm can be used.

[0024] Figure 3 is a side view of a semiconductor manufacturing apparatus 100 according to Embodiment 1 of the present disclosure. In the semiconductor manufacturing apparatus 100, the thickness a of the second terminal 120 is greater than the thickness b of the first terminal 130. This makes the cross-sectional area of ​​the second terminal 120 larger than that of the first terminal 130, and the thermal inductance at the second terminal 120 larger than that at the first terminal 130. As a result, the heat generated in the semiconductor module 110 can be efficiently dissipated toward the second terminal 120.

[0025] However, the thickness a of the second terminal 120 is the thickness of the second terminal 120 in a direction perpendicular to the joining surface where the second terminal 120 is joined to the first terminal 130. Also, the thickness b of the first terminal 130 is the thickness of the extended portion of the first terminal 130 that extends from the sealing material 140, in a direction perpendicular to the joining surface.

[0026] Here, to make the cross-sectional area of ​​the second terminal 120 larger than the cross-sectional area of ​​the first terminal 130, it is also possible to make the width of the second terminal 120 larger than the width of the first terminal 130. However, in the manufacturing process, the first terminal 130 is often placed on top of the second terminal 120, and from the viewpoint of workability, it is preferable that the width of the second terminal 120 be smaller than the width of the first terminal 130.

[0027] Therefore, in this disclosure, the cross-sectional area of ​​the terminal is adjusted by adjusting the thickness of the terminal. This makes it possible to simultaneously improve both the workability in the manufacturing process and the heat dissipation of the semiconductor manufacturing equipment 100.

[0028] Embodiment 2 Figure 4 is a top view of the semiconductor manufacturing apparatus 200 according to Embodiment 2 of the present disclosure. Figure 5 is a side view of the semiconductor manufacturing apparatus 200 according to Embodiment 2 of the present disclosure. In this embodiment, the length c of the first terminal 130 is shorter than the width d of the first terminal 130 (d > c). However, the length c of the first terminal 130 is the length from the boundary portion 160 to the tip of the first terminal 130 in the extended portion where the first terminal 130 extends from the sealing material 140. The width d of the first terminal 130 is the width in the extended portion in a direction that is horizontal to the boundary portion 160 and perpendicular to the direction of the length.

[0029] Here, the thermal resistivity at the first terminal 130 increases in proportion to the length c of the first terminal 130 and is inversely proportional to the cross-sectional area g (hereinafter referred to as cross-sectional area g). In other words, the larger the length c and the smaller the cross-sectional area g, the greater the amount of heat generated at the first terminal 130 when energized. Since the cross-sectional area g of the first terminal 130 is expressed as the product of the width d and the thickness b (d × b), it is preferable to increase the width d in order to increase the cross-sectional area g. At the first terminal 130, by making the width d larger than the length c, the thermal resistivity that is generated in proportion to the length c can be canceled out.

[0030] As described in Embodiment 1, from the viewpoint of workability, it is preferable that the width of the second terminal 120 be smaller than the width d of the first terminal 130. In other words, it is preferable that the area (c × d) of the upper surface of the first terminal 130 be larger than the area f of the joint surface 150 between the first terminal 130 and the second terminal 120. That is, it is preferable that c × d > f.

[0031] Therefore, at the first terminal 130, it is more preferable that c × d > f and d > c.

[0032] Embodiment 3 The diagrams of this embodiment are the same as those of Embodiment 2. In the semiconductor manufacturing apparatus 300 of this embodiment, the cross-sectional area g = d × b of the extended portion of the first terminal 130 is made smaller than the area f of the junction surface 150 between the first terminal 130 and the second terminal 120 (f > g).

[0033] As described in Embodiment 1, the first terminal 130 and the second terminal 120 are joined by laser welding. By making the cross-sectional area g = d × b of the first terminal 130 smaller than the area f of the joining surface 150, it is possible to suppress the transfer of heat applied to the joined parts during welding to the semiconductor element 111 in the sealing material 140 via the first terminal 130.

[0034] Embodiment 4 Figure 6 is a top view of a semiconductor manufacturing apparatus 400 according to Embodiment 4 of the present disclosure. Figure 7 is a side view of the semiconductor manufacturing apparatus 400 according to Embodiment 4 of the present disclosure. The encapsulant 140 of the semiconductor manufacturing apparatus 400 in this embodiment is provided with grooves 410 to ensure distance from the bonding surface 150. This makes it possible to bond terminals with larger heat capacity and suppress the temperature rise of the semiconductor manufacturing apparatus 400. In addition, since the portion of the first terminal 130 exposed from the encapsulant 140 can be increased, it becomes possible to bond the first terminal 130 and the second terminal 120 at a position closer to the center of the semiconductor module 110. As a result, the semiconductor manufacturing apparatus 400 can be miniaturized.

[0035] Embodiment 5 Figure 8 is a side view of a semiconductor manufacturing apparatus 500 according to Embodiment 5 of the present disclosure. In the second terminal 120, the thickness e of the region including the bonding surface 150 (hereinafter referred to as the bonding region) is thinner than the thickness of other regions of the second terminal 120 that are in contact with that region. This makes it possible to reduce the output of the beam 11 when the first terminal 130 and the second terminal 120 are welded by the laser 10, thereby reducing the inflow of heat into the semiconductor module 110.

[0036] Embodiment 6 Figure 9 is a top view of a semiconductor manufacturing apparatus 600 according to Embodiment 6 of the present disclosure. At the second terminal 120, a portion on the side of the bonding surface 150 is cut off, making it U-shaped. This reduces the heat capacity of the second terminal 120, thereby reducing the inflow of heat into the semiconductor module 110. <Variations> Furthermore, the shape does not necessarily have to be U-shaped; it is sufficient if a portion of the second terminal 120 is cut off on the joining surface side that connects to the first terminal 130.

[0037] Embodiment 7 Figure 10 shows a method for manufacturing a semiconductor manufacturing apparatus 700 according to Embodiment 7 of the present disclosure. The manufacturing process of the semiconductor manufacturing apparatus 700 includes a first step of sealing a semiconductor module 110 having a semiconductor element 111 with a sealing material 140. Furthermore, it includes a second step of joining and electrically connecting a first terminal 130, which is electrically connected to the semiconductor element 111 and extends outside the sealing material 140, to a second terminal 120 located outside the sealing material 140.

[0038] In the second step, the beam 11 of the laser 10 is irradiated from the side of the first terminal 130 to perform laser bonding. By performing laser welding from the side of the first terminal 130, which is thinner than the second terminal 120, the output of the beam 11 can be reduced. This reduces the inflow of heat into the semiconductor module 110. In the semiconductor manufacturing apparatus 700, as in Embodiment 1, the thickness a of the second terminal 120 is greater than the thickness b of the first terminal 130.

[0039] Embodiment 8 Figure 11 shows a method for manufacturing a semiconductor manufacturing apparatus 800 according to Embodiment 8 of the present disclosure. The manufacturing process of the semiconductor manufacturing apparatus 800 includes a first step and a second step, similar to Embodiment 7. In addition, the thickness a of the second terminal 120 is greater than the thickness b of the first terminal 130.

[0040] However, in the second step of this embodiment, the beam 11 is irradiated from the side of the second terminal 120 to perform laser welding. Figure 12 is a schematic diagram of the case in which laser joining is performed by irradiating the beam 11 from the side of the second terminal 120 according to Embodiment 8 of this disclosure. As shown in Figure 12, during laser welding, a depression 820 is created in the laser irradiation portion 810 of the second terminal 120. In the depression 820, a portion with a thickness h is created that is thinner than the original thickness a of the second terminal 120.

[0041] As mentioned above, in the semiconductor manufacturing apparatus 800, the thickness a of the second terminal 120 must be greater than the thickness b of the first terminal 130. In this embodiment, laser welding is performed from the side of the second terminal 120, which is thicker than the first terminal 130. With a laser 10 of normal output, even if a dent 820 occurs, its extent can be kept small. That is, it can be guaranteed that the thickness h of the dent 820 is greater than or equal to the thickness b of the first terminal 130. Therefore, it is possible to manufacture a semiconductor manufacturing apparatus 800 that can efficiently dissipate the heat generated in the semiconductor module 110 toward the second terminal 120.

[0042] As described above, this disclosure provides a semiconductor manufacturing apparatus and a method for manufacturing a semiconductor manufacturing apparatus that can suppress the temperature rise of the apparatus by devising the shape of the terminals.

[0043] The technical features described in this disclosure may be used in combination as appropriate. Alternatively, the technical features of this disclosure may be extracted to provide a new semiconductor manufacturing apparatus and method for manufacturing the same, separate from this disclosure. [Explanation of Symbols]

[0044] 10 Laser, 11 Beam, 100, 200, 300, 400, 500, 600, 700, 800 Semiconductor manufacturing equipment, 110 Semiconductor module, 111 Semiconductor element, 112 Bonding material, 113 Metal pattern, 114 Insulating layer, 115 Metal component, 120 Second terminal, 130 First terminal, 140 Sealing material, 150 Bonding surface, 160 Boundary, 410 Groove, 810 Laser irradiation area, 820 Indentation

Claims

1. A semiconductor module having semiconductor elements, A sealing material for sealing the aforementioned semiconductor module, A second terminal located outside the sealing material, Equipped with, The semiconductor module comprises a first terminal electrically connected to the semiconductor element and extending outside the encapsulating material, The first terminal is joined to the second terminal outside the sealing material. In the second terminal, the thickness in the direction perpendicular to the joining surface of the joint is defined as the thickness of the second terminal. In the extended portion of the first terminal that extends from the sealing material, the thickness in the direction perpendicular to the joining surface of the joint is defined as the thickness of the first terminal. The thickness of the second terminal is greater than the thickness of the first terminal. A semiconductor manufacturing apparatus wherein the second terminal is U-shaped with a portion cut off above the first terminal.

2. A semiconductor module having semiconductor elements, A sealing material for sealing the aforementioned semiconductor module, A second terminal located outside the sealing material, Equipped with, The semiconductor module comprises a first terminal electrically connected to the semiconductor element and extending outside the encapsulating material, The first terminal is joined to the second terminal outside the sealing material. In the extended portion of the first terminal that extends from the sealing material, The length from the boundary with the sealing material to the tip is defined as the length of the first terminal. The width of the boundary portion in a direction horizontal to the direction of the length and perpendicular to the direction of the length is defined as the width of the first terminal. The length of the first terminal is shorter than the width of the first terminal. A semiconductor manufacturing apparatus wherein the second terminal is U-shaped with a portion cut off above the first terminal.

3. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein the area of ​​the cross-section of the extended portion of the first terminal is smaller than the area of ​​the bonding surface of the bond.

4. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein the sealing material includes grooves for ensuring a distance from the bonding surface of the bond.

5. The semiconductor manufacturing apparatus according to claim 1, wherein the thickness of the second terminal differs between the bonding region including the bonding surface and other regions of the second terminal in contact with the bonding region, and the thickness in the bonding region is thinner than the thickness in the other regions.

6. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein the semiconductor element is formed of a wide-bandgap semiconductor.

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