Multilayer electronic components

Abstract

To provide a multilayer electronic component which has improved reliability and electrical conductivity, which solves a problem of weak electrical conductivity in order to secure electrical connectivity by hopping conduction, which suppresses occurrence of lifting at an interface between a conductive resin layer and a sintered electrode layer in a high temperature environment, and which, also at other than the interface, suppresses that the inside of a conductive resin layer is torn and lifting occurs.SOLUTION: A multilayer electronic component includes a body including a dielectric layer and an internal electrode arranged alternately with the dielectric layer, and an external electrode disposed on the body. The external electrode includes an electrode layer connected to the internal electrode, an intermetallic compound layer disposed on the electrode layer and including a first intermetallic compound and glass, and a conductive resin layer disposed on the intermetallic compound layer and including: a conductive connection portion including a second intermetallic compound and a low-melting-point metal; a plurality of metal particles; and a resin. A ratio of a length of a first direction component of a region where the first intermetallic compound is formed, with respect to a length of a first direction component of the intermetallic compound layer is 20% or more.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] This invention relates to a stacked electronic component. [Background technology]

[0002] A multi-layered ceramic capacitor (MLCC), a type of multilayer electronic component, is a chip-type capacitor that is mounted on the printed circuit boards of various electronic products such as liquid crystal displays (LCDs) and plasma display panels (PDPs), computers, smartphones, and mobile phones, and plays the role of charging or discharging electricity.

[0003] These multilayer ceramic capacitors offer the advantages of being small yet guaranteeing high capacitance and being easy to mount, making them suitable for use as components in various electronic devices. Recently, with the miniaturization and increased performance of electronic devices, multilayer ceramic capacitors have also tended to become smaller and have higher capacitance, and this trend has increased the importance of ensuring high reliability in multilayer ceramic capacitors.

[0004] As a way to ensure the high reliability of multilayer ceramic capacitors, a technique has been disclosed in which a conductive resin layer is applied to the external electrodes to absorb tensile stress generated in the mechanical or thermal environment and prevent cracks caused by that stress.

[0005] Such conductive resin layers serve to electrically and mechanically bond the sintered electrode layer and the plating layer of the external electrodes of the multilayer ceramic capacitor, and protect the multilayer ceramic capacitor from mechanical and thermal stresses caused by process temperatures and warping impacts of the substrate during circuit board mounting.

[0006] However, because the conductive particles in the conductive resin layer are dispersed, the polymer-metallic bonds between the conductive resin layer and the sintered electrode layer are weak, which can cause lifting at the interface.

[0007] Furthermore, because conductive particles in the conductive resin layer are dispersed and electrical connectivity is ensured by hopping conduction, problems such as weak electrical conductivity can occur.

[0008] Furthermore, the sintered electrode layer and the conductive resin layer are bonded together by the bonding force of the resin, which results in a problem of weak bonding strength. In particular, in high-temperature environments such as reflow, outgassing generated in the conductive resin layer can cause delamination at the interface between the sintered electrode layer and the conductive resin layer.

[0009] Furthermore, if the rigidity of the conductive resin layer is weak, outgassing generated in the conductive resin layer in high-temperature environments such as reflow can cause the inside of the conductive resin layer to rupture, even outside the interface between the sintered electrode layer and the conductive resin layer. [Overview of the project] [Problems that the invention aims to solve]

[0010] One of the various objectives of the present invention is to improve the reliability and electrical conductivity of multilayer electronic components.

[0011] One of the various objectives of the present invention is to suppress the weak adhesion between the conductive resin layer and the sintered electrode layer, which can lead to the formation of a gap at the interface.

[0012] One of the various objectives of the present invention is to solve the problem of weak electrical conductivity, which occurs when conductive particles contained in a conductive resin layer are dispersed and electrical connectivity is ensured by hopping conduction.

[0013] One of the various objectives of the present invention is to suppress the occurrence of delamination at the interface between the sintered electrode layer and the conductive resin layer due to outgassing generated in the conductive resin layer in high-temperature environments such as reflow.

[0014] One of the various objectives of the present invention is to suppress the occurrence of rupture and delamination of the conductive resin layer, not only at the interface between the sintered electrode layer and the conductive resin layer, due to outgassing generated in the conductive resin layer in high-temperature environments such as reflow.

[0015] However, the objectives of the present invention are not limited to those described above and can be more easily understood in the process of describing specific embodiments of the present invention. [Means for solving the problem]

[0016] A stacked electronic component according to one embodiment of the present invention includes a body including a dielectric layer and internal electrodes arranged alternately with the dielectric layer, and an external electrode disposed on the body, wherein the external electrode includes an electrode layer connected to the internal electrode, an intermetallic compound layer disposed on the electrode layer and containing a first intermetallic compound and glass, and a conductive connecting portion disposed on the intermetallic compound layer and containing a second intermetallic compound and a low-melting-point metal, a plurality of metal particles and a resin, and the ratio of the length of the first component of the region where the first intermetallic compound is formed to the length of the first component of the intermetallic compound layer in the first direction is 20% or more.

[0017] A multilayer electronic component according to another embodiment of the present invention includes a main body including a dielectric layer and internal electrodes alternately arranged with the dielectric layer, and an external electrode disposed on the main body. The external electrode includes an electrode layer connected to the internal electrode, an intermetallic compound layer disposed on the electrode layer and including a first intermetallic compound and glass, a conductive connection portion disposed on the intermetallic compound layer and including a second intermetallic compound and a low melting point metal, and a conductive resin layer including a plurality of metal particles and a resin. When the total number of particles having a Feret diameter of 10 μm or more among the particles of the conductive connection portion and the plurality of metal particles is N1, and the total number of all the particles of the conductive connection portion and the plurality of metal particles is N2, the ratio (N1 / N2) of N1 to N2 is 15% or more.

Advantages of the Invention

[0018] One of the various effects of the present invention is that the reliability of the multilayer electronic component is improved.

[0019] One of the various effects of the present invention is to improve the adhesion between the interface of the conductive resin layer and the sintered electrode layer and suppress the occurrence of lifting at the interface.

[0020] One of the various effects of the present invention is to solve the problem that the electrical conductivity becomes weak due to the dispersed form of the conductive particles contained in the conductive resin layer.

[0021] One of the various effects of the present invention is to suppress the occurrence of lifting at the interface between the sintered electrode layer and the conductive resin layer due to outgas generated in the conductive resin layer in a high temperature environment such as reflow.

[0022] One of the various effects of the present invention is to suppress the occurrence of breakage and lifting inside the conductive resin layer even outside the interface between the sintered electrode layer and the conductive resin layer due to outgas generated in the conductive resin layer in a high temperature environment such as reflow.

[0023] However, the diverse yet significant advantages and effects of the present invention are not limited to those described above and can be more easily understood in the process of describing specific embodiments of the present invention. [Brief explanation of the drawing]

[0024] [Figure 1] This drawing schematically shows a perspective view of a stacked electronic component according to one embodiment of the present invention. [Figure 2] This diagram schematically shows a cross-sectional view along the line I-I' in Figure 1. [Figure 3] This diagram schematically shows a cross-sectional view along the line II-II' in Figure 1. [Figure 4] This is a magnified view of area B in Figure 2. [Figure 5] This is a magnified view of area C in Figure 4. [Figure 6a] This is a photograph of a cross-section near region B of a stacked electronic component according to one embodiment of the present invention, taken using a scanning electron microscope (SEM), and then colored to show the region where the first intermetallic compound was formed. [Figure 6b] This is a monochrome rendering of area D in Figure 6a. [Figure 7a] This is a photograph of a cross-section near region B of a stacked electronic component according to one embodiment of the present invention, taken using a scanning electron microscope (SEM), and then colored to show the region where conductive material was generated. [Figure 7b] This is a monochrome photograph of area E in Figure 7a. [Figure 7c] This is a monochrome rendering of area E in Figure 7a. [Figure 8] This is a photograph taken using a scanning electron microscope (SEM) of a cross-section near region B of a stacked electronic component according to one embodiment of the present invention. [Figure 9] This is an exploded perspective view showing a schematic disassembled body in which a dielectric layer and internal electrodes are stacked according to one embodiment of the present invention. [Modes for carrying out the invention]

[0025] Figure 1 is a schematic perspective view of a stacked electronic component according to one embodiment of the present invention; Figure 2 is a schematic cross-sectional view along the line I-I' in Figure 1; Figure 3 is a schematic cross-sectional view along the line II-II' in Figure 1; Figure 4 is an enlarged view of region B in Figure 2; Figure 5 is an enlarged view of region C in Figure 4; Figure 8 is a photograph taken using a scanning electron microscope (SEM) of a cross-section near region B of a stacked electronic component according to one embodiment of the present invention; and Figure 9 is an exploded perspective view schematicly showing a disassembled body in which dielectric layers and internal electrodes are stacked according to one embodiment of the present invention.

[0026] The following describes in detail a stacked electronic component according to one embodiment of the present invention with reference to Figures 1 to 5, 8 and 9.

[0027] A stacked electronic component 100 according to one embodiment of the present invention includes a body 110 including a dielectric layer 111 and internal electrodes 121, 122 arranged alternately with the dielectric layer, and external electrodes 130, 140 arranged on the body, wherein the external electrodes include electrode layers 131, 141 connected to the internal electrodes, intermetallic compound layers 132, 142 arranged on the electrode layers and including first intermetallic compounds 132a, 142a and glass 132b, 142b, and conductive resin layers 133, 143 arranged on the intermetallic compound layers 132, 142 and including conductive connecting parts 133c, 143c including a second intermetallic compound and a low melting point metal, a plurality of metal particles 133a, 143a and resin 133b, 143b, and the ratio of the length of the first direction component of the region where the first intermetallic compound 132a is formed to the length of the first direction component of the intermetallic compound layer 132 is 20% or more.

[0028] The main body 110 has dielectric layers 111 and internal electrodes 121 and 122 stacked alternately.

[0029] There is no particular limitation on the specific shape of the main body 110. However, as shown in the figure, the main body 110 can be formed in a hexahedron shape or a shape similar thereto. Due to the shrinkage of the ceramic powder contained in the main body 110 during the firing process, the main body 110 can have a substantially hexahedron shape rather than a hexahedron shape with perfect straight lines.

[0030] The main body 110 can have a first surface 1 and a second surface 2 that face each other in a first direction, a third surface 3 and a fourth surface 4 that are connected to the first and second surfaces 1 and 2 and face each other in a second direction, and a fifth surface 5 and a sixth surface 6 that are connected to the first and second surfaces 1 and 2, are connected to the third and fourth surfaces 3 and 4, and face each other in a third direction.

[0031] The plurality of dielectric layers 111 forming the main body 110 are in a fired state, and the boundaries between adjacent dielectric layers 111 can be integrated so that they are difficult to confirm without using a scanning electron microscope (SEM).

[0032] According to an embodiment of the present invention, the raw material for forming the dielectric layer 111 is not particularly limited as long as sufficient capacitance can be obtained. For example, a barium titanate-based material, a lead composite perovskite-based material, or a strontium titanate-based material can be used. The barium titanate-based material can include BaTiO3-based ceramic powder. Examples of the ceramic powder include BaTiO3, (Ba 1-x Ca x )TiO3, Ba(Ti 1-y Ca y )O3, (Ba 1-x Ca x )(Ti 1-y Zr y )O3, or Ba(Ti 1-y Zr y )O3, etc.

[0033] The material used to form the dielectric layer 111 can be a powder such as barium titanate (BaTiO3) to which various ceramic additives, organic solvents, binders, dispersants, etc., can be added according to the purpose of the present invention.

[0034] The main body 110 may include a capacitance forming section A which is disposed inside the main body 110 and includes a first internal electrode 121 and a second internal electrode 122 which are arranged facing each other with a dielectric layer 111 in between to form a capacitance, and cover sections 112 and 113 which are formed on the upper and lower parts of the capacitance forming section A.

[0035] Furthermore, the capacitance forming portion A is a part that contributes to the formation of the capacitance of the capacitor, and can be formed by repeatedly stacking a plurality of first and second internal electrodes 121 and 122 with a dielectric layer 111 in between.

[0036] The upper cover portion 112 and the lower cover portion 113 described above can be formed by stacking a single dielectric layer or two or more dielectric layers in the thickness direction on the upper and lower surfaces of the capacitance forming portion A, respectively, and can essentially serve to prevent damage to the internal electrodes due to physical or chemical stress.

[0037] The upper cover portion 112 and the lower cover portion 113 described above do not include internal electrodes and may contain the same material as the dielectric layer 111.

[0038] In other words, the upper cover portion 112 and the lower cover portion 113 may include a ceramic material, for example, a barium titanate (BaTiO3) based ceramic material.

[0039] Furthermore, margin portions 114 and 115 can be arranged on the side surface of the volume forming portion A.

[0040] The margin portions 114 and 115 may include the margin portion 114 located on the sixth surface 6 and the margin portion 115 located on the fifth surface 5 of the main body 110. That is, the margin portions 114 and 115 can be located on both sides of the ceramic main body 110 in the width direction.

[0041] As shown in Figure 3, the margin portions 114 and 115 can represent the regions between the interface between both ends of the first and second internal electrodes 121 and 122 and the main body 110 in the cross-section obtained by cutting the main body 110 in the first and third directions (width-thickness).

[0042] The margins 114 and 115 can essentially serve to prevent damage to the internal electrodes due to physical or chemical stress.

[0043] The margin portions 114 and 115 can be formed by applying a conductive paste to the ceramic green sheet, except where the margin portions are formed, to form internal electrodes.

[0044] Furthermore, in order to suppress the step caused by the internal electrodes 121 and 122, the internal electrodes after lamination can be cut so that they are exposed on the fifth and sixth surfaces 5 and 6 of the main body, and then a single dielectric layer or two or more dielectric layers can be laminated in the width direction on both sides of the capacitance forming section A to form margin sections 114 and 115.

[0045] The internal electrodes 121 and 122 can be arranged alternately with the dielectric layer 111.

[0046] The internal electrodes 121 and 122 may include first and second internal electrodes 121 and 122. The first and second internal electrodes 121 and 122 are arranged alternately facing each other with the dielectric layer 111 constituting the main body 110 in between, and can contact the first and second external electrodes on the third and fourth surfaces 3 and 4 of the main body 110, respectively.

[0047] Referring to Figure 2, the first internal electrode 121 is separated from the fourth surface 4 and in contact with the first external electrode 130 on the third surface 3, while the second internal electrode 122 is separated from the third surface 3 and can make contact with the second external electrode 140 on the fourth surface 4.

[0048] In this configuration, the first and second internal electrodes 121 and 122 can be electrically isolated from each other by the dielectric layer 111 placed in between them.

[0049] Referring to Figure 9, the main body 110 can be formed by alternately stacking ceramic green sheets printed with the first internal electrode 121 and ceramic green sheets printed with the second internal electrode 122, and then firing them.

[0050] The conductive metals contained in the internal electrodes 121 and 122 can be one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, and the present invention is not limited thereto.

[0051] Furthermore, the internal electrodes 121 and 122 can be formed by printing a conductive paste onto a ceramic green sheet, and the printing method for the conductive paste for the internal electrodes can be a screen printing method or a gravure printing method.

[0052] According to one embodiment of the present invention, the external electrode includes electrode layers 131, 141 connected to internal electrodes 121, 122; intermetallic compound layers 132, 142 disposed on the electrode layers and containing first intermetallic compounds 132a, 142a and glass 132b, 142b; and conductive resin layers 133, 143 disposed on the intermetallic compound layers and containing conductive connecting portions 133c, 143c containing second intermetallic compounds 133c, 143c and low melting point metal, a plurality of metal particles 133a, 143a and resin 133b, 143b, wherein the ratio of the length of the first component in the region where the first intermetallic compounds 132a, 142a are formed to the length of the first component in the intermetallic compound layers 132, 142 can be 20% or more.

[0053] Referring to Figure 2, the external electrodes 130, 140 of a stacked electronic component according to one embodiment of the present invention may include electrode layers 131, 141 connected to internal electrodes 121, 122, metal liver compound layers 132, 142 disposed on the electrode layers, and conductive resin layers 133, 143 disposed on the intermetallic compound layers. In this case, it may include first plating layers 134, 144 disposed on the conductive resin layers and second plating layers 135, 145 disposed on the first plating layers, although the first and second plating layers may not be essential components of the present invention.

[0054] Area B in Figure 4 shows a magnified view of a portion of the first external electrode 130. The only difference between the two is that the first external electrode 130 is electrically connected to the first internal electrode 121, while the second external electrode 140 is connected to the second internal electrode 122. Therefore, the configurations of the first external electrode 130 and the second external electrode 140 are similar, and the following explanation will be based on the first external electrode 130, which will also include the explanation of the second external electrode 140.

[0055] The electrode layers 131 and 141 play a role in mechanically joining the main body and the external electrode, and in electrically and mechanically joining the internal electrode and the external electrode.

[0056] The electrode layers 131 and 141 are directly connected to the first and second internal electrodes 121 and 122, which are alternately exposed through one longitudinal surface of the main body 110, thereby ensuring electrical conductivity between the first and second external electrodes 130 and 140 and the first and second internal electrodes 121 and 122.

[0057] In other words, the electrode layers 131 and 141 can be composed of a first electrode layer 131 and a second electrode layer 141, and the first electrode layer 131 is in contact with and directly connected to the first internal electrode 121 exposed through one surface in the longitudinal direction of the main body 110, thereby ensuring electrical conductivity between the first external electrode 130 and the first internal electrode 121.

[0058] Furthermore, the second electrode layer 141 is directly connected to the second internal electrode 122, which is exposed through the other longitudinal surface of the main body 110, by contacting it, thereby ensuring electrical conductivity between the second external electrode 140 and the second internal electrode 122.

[0059] Such electrode layers 131 and 141 can contain metallic components, such as nickel (Ni), copper (Cu), palladium (Pd), gold (Au), or alloys thereof. More preferably, copper sintered with the above metallic components can be used.

[0060] In this case, the electrode layers 131 and 141 can be formed to extend from the third and fourth surfaces 3 and 4 of the main body 110 to a portion of the first and second surfaces 1 and 2 of the main body 110, respectively.

[0061] Furthermore, the electrode layers 131 and 141 can be formed to extend from the third and fourth surfaces 3 and 4 of the main body 110 to a portion of the fifth and sixth surfaces 5 and 6 of the main body, respectively.

[0062] Figure 5 is an enlarged view of region C in Figure 4.

[0063] Referring to Figure 5, a stacked electronic component 100 according to one embodiment of the present invention may include an intermetallic compound layer 132 disposed on the electrode layer 131.

[0064] The intermetallic compound layer 132 may contain a first intermetallic compound 132a and glass 132b.

[0065] Here, the first intermetallic compound 132a can refer to an intermetallic compound formed by the reaction of a low-melting-point metal contained in the conductive resin layer 133 and a metal contained in the electrode layer 131.

[0066] For example, if the electrode layer 131 contains copper (Cu) and the low-melting-point metal contained in the conductive resin layer 133 is Sn, the first intermetallic compound 132a can be Cu3Sn, formed when the low-melting-point metal Sn reacts with the Cu contained in the electrode layer 131 in the direction toward the main body 110. The intermetallic compound layer 132 plays a role in improving reliability and electrical connectivity. The intermetallic compound layer 132 can be arranged to cover the electrode layer 131.

[0067] According to one embodiment of the present invention, an electrode layer 131 can be formed, and an external electrode 130 can be formed by applying a low-melting-point paste onto the electrode layer 131 and firing it.

[0068] As a result, the metal particles 133a contained in the electrode layer 131 and the low-melting-point metal particles contained in the paste mutually diffuse to form a first intermetallic compound 132a, and the first intermetallic compound forms a layer at the interface between the electrode layer 131 and the conductive resin layer 133, thus forming an intermetallic compound layer 132.

[0069] According to one embodiment of the present invention, a conductive connecting portion 133c containing a second intermetallic compound and a low-melting-point metal, a conductive resin layer containing a plurality of metal particles 133a and a resin 133b can be arranged on the intermetallic compound layer 132.

[0070] The second intermetallic compound can refer to an intermetallic compound formed when some of the multiple metal particles 133a inside the conductive resin layer 133 react with a low-melting-point metal.

[0071] Therefore, the second intermetallic compound is formed inside the conductive resin layer 133, and the conductive connecting portion 133c can be formed via the low-melting-point metal and metallic bonds remaining after the formation of the intermetallic compound.

[0072] For example, when the conductive resin layer 133 is formed using an Ag-Sn epoxy resin paste, the second intermetallic compound can be Ag3Sn, which is formed by the reaction of Ag and Sn. When it is formed using a Cu-Sn epoxy resin paste, the second intermetallic compound can be Cu3Sn or Cu6Sn5.

[0073] The conductive resin layer 133 plays a role in electrically and mechanically bonding the intermetallic compound layer 132 and the first plating layer 134, and when mounting the multilayer electronic component 100 onto a substrate, it can absorb tensile stress generated in the mechanical or thermal environment to prevent crack formation and protect the multilayer electronic component 100 from warping of the substrate.

[0074] The conductive connecting portion 132c plays a role in surrounding and connecting multiple metal particles 132a in a molten state, minimizing internal stress in the main body 110 and improving high-temperature load and humidity load resistance characteristics.

[0075] The conductive connecting portion 132c can contain a second intermetallic compound and a low-melting-point metal, and therefore can have excellent electrical conductivity.

[0076] Conventionally, when a conductive resin layer 133 is formed on an electrode layer 131, the difference in components between the electrode layer 131 and the conductive resin layer 133 weakens the bonding force, which makes the layer vulnerable to the penetration of plating solution and external moisture.

[0077] Furthermore, in the case of the conductive resin layer 133, since polymers such as epoxy are present in the final product after the process, there is a possibility that sufficient bonding strength cannot be ensured in high-temperature environments such as reflow.

[0078] In particular, if the ratio of the length of the component in the first direction of the region where the first intermetallic compound 132a is formed to the length of the component in the first direction of the intermetallic compound layer 132 is less than 20%, there is a risk that sufficient bonding force between the electrode layer 131 and the conductive resin layer 133 cannot be ensured in high-temperature environments such as reflow soldering. Here, reflow soldering refers to the heat treatment used to melt and bond the solder when mounting the multilayer electronic component 100 onto a substrate using solder.

[0079] According to one embodiment of the present invention, by adjusting the ratio of the length of the component in the first direction in the region where the first intermetallic compound 132a is formed to the length of the component in the first direction of the intermetallic compound layer 132 to 20% or more, sufficient bonding force between the electrode layer 131 and the conductive resin layer 133 can be maintained even in high-temperature environments such as reflow, thereby suppressing the occurrence of floating at the interface between the electrode layer 131 and the conductive resin layer 133 and ensuring stable electrical connectivity between the electrode layer 131 and the conductive resin layer 133.

[0080] In order to ensure sufficient bonding force between the electrode layer 131 and the conductive resin layer 133, it is preferable that the ratio of the length of the component in the first direction in the region where the first intermetallic compound 132a is formed to the length of the component in the first direction of the intermetallic compound layer 132 is 20% or more, and more preferably 22.1% or more.

[0081] Here, the first direction can mean the stacking direction or the thickness T direction, and the length of the component in the first direction can mean the sum of the lengths of the components in the total length that are parallel to the first direction (stacking or thickness direction).

[0082] The length of the component in the first direction of the region where the first intermetallic compound 132a is formed and the length of the component in the first direction of the intermetallic compound layer 132 can be calculated as the average value measured by the ImageJ program after photographing a region (region D) of thickness × length = (0.3T~0.4T) × (20μm) using a scanning electron microscope (SEM), with the total thickness of the stacked electronic component being T, based on the center point in the thickness direction of the intermetallic compound layer 132 located on the head faces 3 and 4, after polishing the intermetallic compound layer 132 to half its width in the length-thickness direction.

[0083] As in the embodiment of the present invention described above, when the conductive resin layer 133 includes a conductive connecting portion 133c, a plurality of metal particles 133a, and resin 133b, the conductive connecting portion 133c and the plurality of metal particles 133a, which include the metal particles, form polymer-metal bonds with the resin 133b, resulting in a problem of weak bonding strength.

[0084] Furthermore, if the rigidity of the conductive resin layer 133 is weak, outgassing generated in high-temperature environments such as the reflow process can cause the inside of the conductive resin layer 133 to rupture, resulting in a deterioration of high-temperature reliability.

[0085] In one embodiment, when N1 is the total number of particles in the conductive connecting portion 133c and the plurality of metal particles 133a whose ferret diameter is 10 μm or more, and N2 is the total number of particles in the conductive connecting portion 133c and the plurality of metal particles 133a, the ratio of N1 to N2 (N1 / N2) can be 15% or more.

[0086] As a result, even when the adhesive strength is weak due to polymer-metal bonding, the conductive connecting portion 133c and the multiple metal particles 133a play a role in holding down the resin 133b, thereby improving the overall adhesive strength of the conductive resin layer 133.

[0087] This improvement in adhesive strength increases the rigidity of the conductive resin layer 133, thereby preventing the internal structure of the conductive resin layer 133 from rupturing due to outgassing that occurs in high-temperature environments such as reflow processes, and improving high-temperature reliability.

[0088] If the N1 / N2 ratio is less than 15%, the conductive connecting portion 133c and the multiple metal particles 133a may have difficulty performing their role in holding down the resin 133b, making it difficult to ensure excellent rigidity for the entire conductive resin layer 133.

[0089] Therefore, it is preferable that the N1 / N2 ratio be 15% or more, but it is even more preferable that it be 15.2% or more.

[0090] This configuration not only prevents lifting at the interface between the electrode layer 131 and the conductive resin layer 133, but also prevents tearing inside the conductive resin layer 133, allowing the entire external electrode 130 to have excellent high-temperature reliability and electrical conductivity.

[0091] On the other hand, the ferret diameter can refer to the distance between two opposing tangents of a metal particle. In particular, the ferret diameter according to one embodiment of the present invention can refer to the maximum ferret diameter, which is the maximum distance measured between the pair of tangents of the metal particle, but is not limited to this, and may also refer to the minimum ferret diameter.

[0092] Furthermore, the maximum or minimum ferret diameter can be calculated using an image analysis program (ImageJ) after polishing the length-thickness direction to half the width, and then, with T being the total thickness of the laminated electronic component based on the center point in the thickness direction of the conductive resin layer 133 located on the head surfaces 3 and 4, the region (E region) of thickness × length = (0.06T~0.08T) × (15μm~25μm) is photographed using a scanning electron microscope (SEM).

[0093] Since the conductive connecting portion 133c can contain a second intermetallic compound or a low-melting-point metal, the particles of the conductive connecting portion 133c can contain particles of the second intermetallic compound or particles of the low-melting-point metal.

[0094] The size of the particles in the conductive connecting portion 133c is sufficient if they are small enough to form on a portion of the conductive resin layer 133.

[0095] The particles of the conductive connecting portion 133c and the multiple metal particles can be clusters of various materials, and the boundaries of the materials forming the cluster can be integrated to such an extent that they are difficult to distinguish even in an image magnified 5000 times using a scanning electron microscope (SEM).

[0096] As described above, even if the ferret diameter and distribution of the conductive connecting portion 133c, low-melting-point metal, and multiple metal particles 133a contained in the conductive resin layer are adjusted, the particles of the conductive material can be arranged in a dispersed manner.

[0097] In such cases, the specific gravity of hopping conduction is high, and compared to cases where the specific gravity of band conduction is high, the electrical conductivity is weaker. As a result, the polymer-metal bond between the conductive resin layer 133 and the intermetallic compound layer 132 becomes dominant, leading to a weak bonding force. This may cause delamination at the interface between the electrode layer 131 and the conductive resin layer 133 in high-temperature environments.

[0098] In one embodiment, referring to Figure 5, a portion of the conductive connecting portion 133c contained in the conductive resin layer 133 comes into direct contact with a portion of the first intermetallic compound 132a contained in the intermetallic compound layer 132, thereby increasing the specific gravity of band conduction and improving electrical connectivity. High-temperature reliability can be further improved by causing the intermetallic compound layer 132 or the first plating layer 134 to form a metallic bond with the conductive connecting portion 133c.

[0099] When a conductive resin layer 133 is formed on an electrode layer 131 containing a conventional conductive metal, there is a problem in that the reliability of the laminated electronic component 100 becomes weak because the plating solution and external moisture penetrate to the interface between the electrode layer 131 and the conductive resin layer 133.

[0100] In one embodiment, the electrode layer 131 can be formed, and an external electrode 130 can be formed by applying a low-melting-point paste onto the electrode layer 131 and firing it.

[0101] As a result, the metal particles contained in the electrode layer 131 and the low-melting-point metal particles contained in the paste mutually diffuse, allowing the first intermetallic compound 132a to be formed in the form of a layer, and the conductive resin layer 133 to be formed on the intermetallic compound layer 132 containing the first intermetallic compound 132a. In other words, the first intermetallic compound 132a can be formed in a layer between the electrode layer 131 and the conductive resin layer 133, forming the intermetallic compound layer 132.

[0102] In this case, the first intermetallic compound 132a can be Cu3Sn. That is, it can be Cu3Sn formed by the bonding of Cu, which is a metal particle contained in the electrode layer 131, and Sn, which is a low-melting-point metal particle contained in the conductive paste.

[0103] By using Cu3Sn as the first intermetallic compound, it is possible to prevent the penetration of plating solution and external moisture between the electrode layer 131 and the conductive resin layer 133, thereby further improving the reliability of the multilayer electronic component 100.

[0104] Furthermore, a conductive resin layer 133 is formed using a conductive paste of Ag-Sn-based epoxy resin or Cu-Sn-based epoxy resin. By adjusting the amount of Sn solder, the intermetallic compound layer 132 can contain a conductive connecting portion containing a second intermetallic compound and a low-melting-point metal, multiple metal particles, and resin.

[0105] In this case, the low-melting-point metal can preferably be a metal having a melting point of 300°C or lower.

[0106] For example, it may contain Sn having a melting point of 213°C to 220°C. During the drying and hardening process, the Sn melts, and the molten Sn penetrates into high-melting-point metal particles such as Ag by capillary action, reacting with the metal particles to form a second intermetallic compound.

[0107] In one embodiment, the second intermetallic compound contained in the conductive connecting portion 133 can be an intermetallic compound formed by the reaction of Sn contained in the conductive paste forming the conductive resin layer 133 with one of Cu, Ag, or Ag-coated Cu.

[0108] Therefore, the second intermetallic compound may include at least one of Cu3Sn, Cu6Sn5, and Ag3Sn, the plurality of metal particles 133a may be Cu, Ag, and Ag-coated Cu that do not react with Sn or Sn-based alloys, and the low-melting-point metal may be Sn or Sn-based alloys that do not react with the plurality of metal particles 133a.

[0109] By forming a conductive connecting portion 133c containing a second intermetallic compound and a low-melting-point metal, and a conductive resin layer 133 containing a plurality of metal particles 133a and resin on the intermetallic compound layer 132, it is possible to further improve the electrical connectivity while also improving the rigidity of the laminated electronic component 100 against external impacts.

[0110] In one embodiment, the electrode layer 131 may include a conductive metal and glass. When the metal particles in the electrode layer and the low-melting-point metal particles (Sn) in the conductive paste combine to form an intermetallic compound layer, the glass in the electrode layer may remain unreacted at the interface between the electrode layer and the conductive resin layer.

[0111] Therefore, the glass 133b can be included in the intermetallic compound layer 133.

[0112] The resin 134b may include a thermosetting resin having electrical insulating properties.

[0113] In this case, the thermosetting resin may be, for example, an epoxy resin, and the present invention is not limited thereto.

[0114] The resin 134b can mechanically connect the intermetallic compound layer 132 and the first plating layer 134, and can also impart elasticity to the external electrode 130, preventing cracks from forming in the external electrode 130 due to external deformation.

[0115] In one embodiment, the external electrode 130 may include a first plating layer 134 disposed on the conductive resin layer 133.

[0116] The first plating layer 134 plays a role in improving the mounting characteristics. The type of the first plating layer 134 is not particularly limited and can be a plating layer containing one or more of Ni, Sn, Pd, and their alloys, and can be formed in multiple layers.

[0117] For example, the first plating layer 134 can be a Ni plating layer placed on the conductive resin layer 133.

[0118] At this time, a portion of the conductive connecting portion 133c can directly contact a portion of the first plating layer 134, thereby playing a role in connecting the first plating layer 134 and the intermetallic compound layer 132.

[0119] In other words, as shown in Figure 4, a portion of the conductive coupling portion 133c directly contacts a portion of the first intermetallic compound 132a contained in the intermetallic compound layer 132, or a portion of the first plating layer 134. This increases the specific gravity of band conduction, improving electrical connectivity and also improving physical bonding strength, further enhancing high-temperature reliability.

[0120] In one embodiment, the external electrode 130 may include a second plating layer 135 disposed on the first plating layer 134.

[0121] The second plating layer 135 plays a role in improving the mounting characteristics. The type of plating layer is not particularly limited and can be a plating layer containing one or more of Ni, Sn, Pd, and their alloys.

[0122] For example, it may include a Sn plating layer placed on top of a Ni plating layer.

[0123] In the following, a stacked electronic component according to another embodiment of the present invention will be described in detail, and descriptions that overlap with the embodiments described above will be omitted.

[0124] A stacked electronic component 100 according to another embodiment of the present invention includes a body 110 including a dielectric layer 111 and internal electrodes 121, 122 arranged alternately with the dielectric layer, and external electrodes 130, 140 arranged on the body, wherein the external electrodes include electrode layers 131, 141 connected to the internal electrodes, intermetallic compound layers 132, 142 arranged on the electrode layers and including a first intermetallic compound 132a, 142a and glass 132b, 142b, and a second intermetallic compound layer arranged on the intermetallic compound layers 132, 142. The material comprises conductive connecting parts 133c, 143c containing a compound and a low-melting-point metal, conductive resin layers 133, 143 containing a plurality of metal particles 133a, 143a and resins 133b, 143b, wherein when N1 is the total number of particles in the conductive connecting part 133c and the plurality of metal particles 133a whose ferret diameter is 10 μm or more, and N2 is the total number of particles in the conductive connecting part 133c and the plurality of metal particles 133a, the ratio of N1 to N2 (N1 / N2) is 15% or more.

[0125] In conventional cases, when the conductive resin layer 133 includes a conductive connecting portion 133c, a plurality of metal particles 133a, and resin 133b, the conductive connecting portion 133c containing the metal particles and the plurality of metal particles 133a form polymer-metal bonds with the resin 133b, resulting in a problem of weak bonding strength.

[0126] Furthermore, if the conductive resin layer 133 has low rigidity, outgassing generated in high-temperature environments such as the reflow process can cause the inside of the conductive resin layer 133 to rupture, resulting in a deterioration of high-temperature reliability.

[0127] In one embodiment, when N1 is the total number of particles in the conductive connecting portion 133c and the plurality of metal particles 133a whose ferret diameter is 10 μm or more, and N2 is the total number of particles in the conductive connecting portion 133c and the plurality of metal particles 133a, the ratio of N1 to N2 (N1 / N2) can be 15% or more.

[0128] As a result, even when the bonding force between the metal and resin is weak, the conductive connecting portion 133c and the multiple metal particles 133a play a role in holding down the resin 133b, thereby improving the overall bonding force of the conductive resin layer 133.

[0129] This improvement in bonding strength increases the rigidity of the conductive resin layer 133, thereby preventing the internal structure of the conductive resin layer 133 from rupturing due to outgassing that occurs in high-temperature environments such as the reflow process, and improving high-temperature reliability.

[0130] If the N1 / N2 ratio is less than 15%, the conductive connecting portion 133c and the multiple metal particles 133a may have difficulty performing their role in holding down the resin 133b, making it difficult to ensure good rigidity for the entire conductive resin layer 133.

[0131] Therefore, it is preferable that the N1 / N2 ratio be 15% or more, but it is even more preferable that it be 15.2% or more.

[0132] Since the conductive connecting portion 133c can contain a second intermetallic compound or a low-melting-point metal, the particles of the conductive connecting portion 133c can contain particles of the second intermetallic compound or particles of the low-melting-point metal.

[0133] The size of the particles in the conductive connecting portion 133c is sufficient if they are small enough to form on a portion of the conductive resin layer 133.

[0134] The particles of the conductive connecting portion 133c and the multiple metal particles can form a cluster in which multiple materials are made up of a single mass, and the boundaries of the materials making up the cluster can be integrated to such an extent that they are difficult to distinguish even in an image magnified 5000 times using a scanning electron microscope (SEM).

[0135] The stacked electronic component 100 according to another embodiment of the present invention described above may have a configuration similar to that of the stacked electronic component 100 according to the embodiment of the present invention described above.

[0136] Therefore, we will omit any explanations that overlap with the embodiment described above.

[0137] The following describes in detail a method for manufacturing a stacked electronic component according to one embodiment of the present invention. However, the present invention is not limited thereto, and any description of the method for manufacturing a stacked electronic component according to this embodiment that overlaps with the description of the stacked electronic component described above will be omitted.

[0138] The manufacturing method for the stacked electronic component according to this embodiment involves first applying a slurry containing a powder such as barium titanate (BaTiO3) onto a carrier film and drying it to provide a plurality of ceramic green sheets.

[0139] The above-mentioned ceramic green sheet is produced by mixing ceramic powder, a binder, and a solvent to create a slurry, and then fabricating the slurry into a sheet with a thickness of several micrometers using a doctor blade method or similar.

[0140] Next, a conductive paste for internal electrodes containing a conductive metal such as nickel powder is applied to the green sheet using a screen printing method or similar to form the internal electrodes.

[0141] Next, multiple layers of green sheets with printed internal electrodes are stacked to form a laminate. In this case, multiple layers of green sheets without printed internal electrodes can be stacked on the top and bottom surfaces of the laminate to form a cover.

[0142] Next, after firing the laminate to form the main body, electrode layers are formed on the third and fourth surfaces of the main body so as to be electrically connected to the first and second internal electrodes, respectively.

[0143] The main body includes a dielectric layer, internal electrodes, and a cover. The dielectric layer is formed by firing a green sheet on which the internal electrodes are printed, and the cover is formed by firing a green sheet on which the internal electrodes are not printed.

[0144] The above-mentioned internal electrodes can be formed from first and second internal electrodes having different polarities.

[0145] Next, electrode layers are formed on one and the other surface of the main body.

[0146] The electrode layer described above can be formed by applying a conductive paste for forming external electrodes, which contains copper and glass, both conductive metals, to one and the other surface of the main body.

[0147] The electrode layer described above can be formed by a dipping method, but is not limited thereto. The electrode layer can also be formed by a sheet transfer method, electroless plating, or sputtering.

[0148] Next, a low-melting-point paste containing multiple metal particles, resin, and a low-melting-point metal is applied to the electrode layer and dried, then subjected to a curing heat treatment to form a first intermetallic compound layer made of a first intermetallic compound, a conductive connecting portion placed on the first intermetallic compound layer, and a conductive resin layer made of multiple metal particles and resin.

[0149] For example, the low-melting-point paste described above can be manufactured by mixing Ag powder, Cu powder, Ag-coated Cu powder, Sn-based solder powder, and thermosetting resin, and then dispersing them using a 3-roll mill. The Sn-based solder powder is made of Sn, Sn 96.5 Ag 3.0 Cu 0.5 Sn 42 Bi 58 and Sn 72 Bi 28 The present invention may contain one or more selected from the above, and the particle size of Ag contained in the Ag powder may be 0.5 to 3 μm, but the present invention is not limited thereto.

[0150] Then, the low-melting-point paste can be applied to the outside of the electrode layer, dried, and cured to form a first intermetallic compound, a second intermetallic compound, and a conductive resin layer.

[0151] The above thermosetting resin may include, for example, epoxy resins, and the present invention is not limited thereto. For example, it may be a bisphenol A resin, glycol epoxy resin, novolac epoxy resin, or a derivative thereof that has a small molecular weight and is liquid at room temperature.

[0152] There can be various methods for adjusting the length at which the first intermetallic compound 132a is formed in the intermetallic compound layer 132, or for controlling the proportion and size of the conductive connecting portion 133c, multiple metal particles 133a, and low-melting-point metals contained in the conductive resin layer 133.

[0153] Specifically, the curing temperature, the amount of Sn-based solder powder, the amount of thermosetting resin, and the firing atmosphere can be organically adjusted and controlled, but are not limited to these factors.

[0154] Furthermore, the process may further include the step of forming a first plating layer and a second plating layer on the conductive resin layer.

[0155] For example, a nickel plating layer, which is a first plating layer, can be formed on a conductive resin layer, and a tin plating layer, which is a second plating layer, can be formed on the nickel plating layer.

[0156] (Example 1) The ratio of the length of the region where the first intermetallic compound 132a is formed to the total length of the intermetallic compound layer 132 was measured, and the presence or absence of floating defects was recorded in [Table 1].

[0157] Referring to Figure 7a, after polishing the intermetallic compound layer 132 in the length-thickness direction to half its width, and with the total thickness of the stacked electronic component being T based on the center point in the thickness direction of the intermetallic compound layer 132 located on the head faces 3 and 4, a cross-section of the region (D region) of thickness × length = (0.3T~0.4T) × (20 μm) was photographed using a scanning electron microscope (SEM) from 20 samples, and the region where the conductive material was formed was colored.

[0158] Figure 6a is a photograph taken using the ImageJ program, in which the color of the site where the first intermetallic compound 132a was formed has been changed to monochrome.

[0159] The sum of the lengths in the thickness direction (first direction) of the modified regions was defined as the length of the region where the first intermetallic compound 132a was formed, and the total length in the thickness direction (first direction) of the region including the points where the first intermetallic compound 132a was formed, as well as the region where it was not formed, was defined as the total length of the intermetallic compound layer 132.

[0160] For example, referring to Figure 6b, the region where the first intermetallic compound 132a is formed in region D is shown in black, while the glass 132b, electrode layer 131, voids, etc., excluding the first intermetallic compound 132a, are not shown in black.

[0161] In the region where the first intermetallic compound 132a is formed, the sum of the lengths of all components in the first direction (L1 + L2 + L3) is defined as the length of the region where the first intermetallic compound 132a is formed. The total length (L) of the components in the first direction at the interface between the intermetallic compound layer 132 and the electrode layer 131, including the length of the region where the first intermetallic compound 132a is not formed, is defined as the total length (L) of the intermetallic compound layer 132.

[0162] Therefore, in this case, the ratio of the length of the region where the first intermetallic compound 132a is formed to the total length of the intermetallic compound layer 132 corresponds to ((L1+L2+L3) / L).

[0163] To determine whether or not floating occurred, 30 samples per test number were mounted in either the first-to-second direction or the second-to-third direction, and the reflow process was repeated 5 times in the mounted state.

[0164] Subsequently, the samples were cut while still mounted on the substrate, and both sides of the external electrodes of each sample were X-ray-imagingd. If a bright band was present on the external electrode portion, it was considered that detachment had occurred; if no bright band was present, it was considered that detachment had not occurred.

[0165] Furthermore, we indicated that if no buoyancy occurred in any of the 30 samples (0%), it was OK, and if even 1% of the samples experienced buoyancy, it was NG.

[0166] [Table 1] *: Comparative example

[0167] In the cases of test numbers 1 to 3, the ratio of the length of the region where the first intermetallic compound 132a is formed to the total length of the intermetallic compound layer 132 was 20% or more, confirming that the occurrence of floating between the electrode layer 131 and the conductive resin layer 133 can be suppressed.

[0168] In the cases of test numbers 4 and 5, the ratio of the length of the region where the first intermetallic compound 132a was formed to the total length of the intermetallic compound layer 132 was less than 20%, so the effect of suppressing delamination could not be confirmed.

[0169] (Example 2) The degree of internal detachment of the conductive resin layer 133, corresponding to the proportion of the internal network structure contained within it, was measured and recorded in Table 2.

[0170] The proportion of the internal network structure can be measured as follows:

[0171] Referring to Figure 7a, after polishing in the length-thickness direction to half the width, and with the total thickness of the laminated electronic component being T based on the center point in the thickness direction of the conductive resin layer 133 located on the head surfaces 3 and 4, images of the cross-section were taken using a scanning electron microscope (SEM) from one sample per sample in the thickness × length = (0.06T~0.08T) × (15μm~25μm) region (E region).

[0172] Referring to Figure 7b, the ImageJ program monochrome-processed the conductive connecting portion 113c, the multiple metal particles 113a, and the region where the low-melting-point metal was formed. Therefore, as shown in Figure 7b, the resin 133b in region E is not monochrome-processed.

[0173] At this time, the ferret diameters (D1, D2, D3) of the clusters displayed in monochrome are measured using the ImageJ program.

[0174] Referring to Figure 7c, the ferret diameter can be defined as the distance between two opposite tangents of a cluster.

[0175] The measured ferret diameter described above may represent the maximum ferret diameter. That is, the ferret diameter described above may represent the maximum distance between tangent pairs of clusters.

[0176] In one embodiment of the present invention or another embodiment, in order to minimize errors, the clusters on the outer edge of region E were given a ferret diameter twice the measured ferret diameter, and clusters smaller than 0.5 μm were excluded to remove noise. Then, when the number of clusters with a ferret diameter of 10 μm or more was N1 and the total number of clusters was N2, the presence or absence of rupture in the conductive resin layer 133 due to N1 / N2 was measured.

[0177] To determine whether tearing occurred, 30 samples per test number were mounted in either the first-direction-second-direction or second-direction-third-direction orientation, and the reflow process was repeated 5 times in the mounted state.

[0178] The substrate on which the samples were mounted was cut, and both sides of the external electrode of each sample were X-ray photographed. If a bright band was present in the external electrode area, it was considered that a tear had occurred; if no bright band was present, it was considered that no tear had occurred. Subsequently, the presence or absence of a tear was further confirmed by cross-sectional analysis.

[0179] In Table 2, a score of 0% (no tearing at all) was indicated as OK, and a score of NG (not OK) was indicated as even 1% of the 20 samples.

[0180] [Table 2] *: Comparative example

[0181] In the case of test number 1, since the N1 / N2 ratio was less than 15%, it could not be confirmed that the lifting due to rupture inside the conductive resin layer was suppressed.

[0182] In the case of test numbers 2 to 8, the N1 / N2 ratio was 15% or higher, confirming that this prevented internal tearing of the conductive resin layer and suppressed lifting.

[0183] Therefore, by adjusting N1 / N2 to 15% or more, as in one embodiment of the present invention, it is possible not only to prevent lifting at the interface between the electrode layer 131 and the conductive resin layer 133, but also to prevent rupture inside the conductive resin layer 133, so that the entire external electrode 130 has excellent reliability and electrical conductivity.

[0184] Although embodiments of the present invention have been described in detail above, the present invention is not limited by the embodiments described above and the accompanying drawings, but is limited by the claims provided. Therefore, within the scope of the technical idea of ​​the present invention as described in the claims, various forms of substitution, modification, and alteration are possible by persons with ordinary skill in the art, and these also fall within the scope of the present invention. [Explanation of Symbols]

[0185] 100 Stacked Electronic Components 110 Main Unit 111 Dielectric layer 112, 113 Cover section 114, 115 Margin section 121, 122 Internal electrode 130, 140 external electrode 131 Electrode layer 132 Intermetallic compound layer 132a First intermetallic compound 132b Glass 133 Conductive resin layer 133a Multiple metal particles 133b Resin 133c Conductive connection 134 First Plating Layer 135 Second plating layer

Claims

1. A body including a dielectric layer and internal electrodes arranged alternately with the dielectric layer, and an external electrode disposed on the body, The aforementioned external electrode is An electrode layer connected to the internal electrode, Displaced on the electrode layer, an intermetallic compound layer containing a first intermetallic compound and glass, Displaced on the intermetallic compound layer, it includes a conductive connecting portion containing a second intermetallic compound and a low-melting-point metal, a conductive resin layer containing a plurality of metal particles and a resin, The ratio of the length of the component in the first direction of the region where the first intermetallic compound is formed to the length of the component in the first direction of the intermetallic compound layer is 20% or more. A multilayer electronic component in which, when N1 is the total number of particles containing particles of the second intermetallic compound or low-melting-point metal in the conductive connecting portion and the plurality of metal particles, and when N2 is the total number of particles containing particles of the second intermetallic compound or low-melting-point metal in the conductive connecting portion and the plurality of metal particles, the ratio of N1 to N2 (N1 / N2) is 15% or more.

2. The laminated electronic component according to claim 1, wherein a portion of the conductive connecting portion is in direct contact with a portion of the first intermetallic compound contained in the intermetallic compound layer.

3. The first intermetallic compound is Cu ３ A stacked electronic component according to claim 1 or 2, wherein the component is Sn.

4. The second intermetallic compound contained in the conductive connecting portion is Cu ３ Sn, Cu ６ Sn ５ and Ag ３ A stacked electronic component according to any one of claims 1 to 3, comprising at least one of Sn.

5. The multilayer electronic component according to any one of claims 1 to 4, wherein the plurality of metal particles include at least one of silver (Ag), copper (Cu), and silver (Ag) coated copper (Cu), and the low-melting-point metal included in the conductive connecting portion is tin (Sn) or a tin (Sn) alloy.

6. The laminated electronic component according to any one of claims 1 to 5, wherein the electrode layer includes a conductive metal and glass.

7. The multilayer electronic component according to any one of claims 1 to 6, wherein the external electrode includes a first plating layer disposed on the conductive resin layer.

8. The multilayer electronic component according to claim 7, wherein a part of the conductive connecting portion is in direct contact with a part of the first plating layer and a part of the first intermetallic compound contained in the intermetallic compound layer.

9. The multilayer electronic component according to claim 8, further comprising a second plating layer disposed on the first plating layer.

10. A body including a dielectric layer and internal electrodes arranged alternately with the dielectric layer, and an external electrode disposed on the body, The aforementioned external electrode is An electrode layer connected to the internal electrode, Displaced on the electrode layer, an intermetallic compound layer containing a first intermetallic compound and glass, Displaced on the intermetallic compound layer, it includes a conductive connecting portion containing a second intermetallic compound and a low-melting-point metal, a conductive resin layer containing a plurality of metal particles and a resin, A multilayer electronic component in which, when N1 is the total number of particles containing particles of the second intermetallic compound or low-melting-point metal in the conductive connecting portion and the plurality of metal particles, and when N2 is the total number of particles containing particles of the second intermetallic compound or low-melting-point metal in the conductive connecting portion and the plurality of metal particles, the ratio of N1 to N2 (N1 / N2) is 15% or more.

11. The laminated electronic component according to claim 10, wherein a portion of the conductive connecting portion is in direct contact with a portion of the first intermetallic compound contained in the intermetallic compound layer.

12. The first intermetallic compound is Cu ３ A stacked electronic component according to claim 10 or 11, wherein the component is Sn.

13. The second intermetallic compound included in the conductive connection part is Cu ３ Sn, Cu ６ Sn ５ and Ag ３ The laminated electronic component according to any one of claims 10 to 12, comprising at least one of Sn

14. The multilayer electronic component according to any one of claims 10 to 13, wherein the plurality of metal particles include at least one of silver (Ag), copper (Cu), and silver (Ag) coated copper (Cu), and the low-melting-point metal included in the conductive connecting portion is tin (Sn) or a tin (Sn) alloy.

15. The laminated electronic component according to any one of claims 10 to 14, wherein the electrode layer comprises a conductive metal and glass.

16. The multilayer electronic component according to any one of claims 10 to 15, wherein the external electrode includes a first plating layer disposed on the conductive resin layer.

17. The laminated electronic component according to claim 16, wherein a part of the conductive connecting portion is in direct contact with a part of the first plating layer and a part of the first intermetallic compound contained in the intermetallic compound layer.

18. The multilayer electronic component according to claim 16 or 17, further comprising a second plating layer disposed on the first plating layer.

Images