Semiconductor wafer manufacturing equipment

Abstract

To suppress generation of an epitaxial crown.SOLUTION: A semiconductor wafer manufacturing apparatus includes: a cylindrical growth container 100 into which a reaction gas is introduced and which causes an epitaxial layer 11 to grow in a hollow part 101a constituting a reaction chamber; a wafer heating susceptor 130 which is disposed in the hollow part 100a of the growth container 100 and in which a seed substrate 10 having one surface 130a at which the epitaxial layer 11 grows is disposed; and supply pipes 210-230 included in the growth container 100 and supplying the reaction gas for causing an epitaxial layer to grow in the growth container 100 along a normal direction relative to the one surface 130a. The wafer heating susceptor 130 is configured to supply a dilution gas for diluting the reaction gas into the growth container 100 from around a part of the one surface 130a in which the seed substrate 10 is disposed.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a semiconductor wafer manufacturing apparatus that forms an epitaxial layer on a seed substrate to constitute a semiconductor wafer.

Background Art

[0002] Conventionally, in a reaction chamber into which a reaction gas is introduced, a semiconductor wafer manufacturing apparatus has been proposed that manufactures a semiconductor wafer by growing an epitaxial layer on a seed substrate (see, for example, Patent Document 1).

[0003] Specifically, in this semiconductor wafer manufacturing apparatus, a recess is formed in a pedestal, and the seed substrate is disposed in the recess. This makes it difficult for the reaction gas to flow around the outer peripheral portion of the seed substrate, and suppresses the occurrence of an epi-crown in which the epitaxial layer bulges at the outer peripheral portion of the seed substrate.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] However, with this configuration, strict management of the depth of the recess is required, such as the depth of the recess needs to be greater than the thickness of the seed substrate. Further, according to the study by the present inventors, it has been confirmed that in this structure, the epi-crown may not be sufficiently suppressed in some cases.

[0006] In view of the above points, an object of the present invention is to provide a semiconductor wafer manufacturing apparatus that can suppress the occurrence of an epi-crown.

Means for Solving the Problems

[0007] Claim 1 for achieving the above objective ~3 The semiconductor wafer manufacturing apparatus comprises a cylindrical growth container (100) into which a reaction gas is introduced and an epitaxial layer (11) is grown in a hollow section (101a) that constitutes a reaction chamber; a wafer heating susceptor (130) disposed within the hollow section of the growth container, on which a seed substrate (10) on which an epitaxial layer is grown is placed; and supply piping (210-230) provided in the growth container for supplying the reaction gas for growing the epitaxial layer to the growth container along the direction normal to the surface. The wafer heating susceptor is configured such that a dilution gas is supplied to the growth container from around the portion of the surface (130a) on which the seed substrate is placed to dilute the reaction gas. Furthermore, in claim 1, the reaction gas comprises a gallium-based gas and an ammonia-based gas, and the diluent gas is a gas containing an ammonia-based gas. Claim 2 provides a cylindrical raw material supply chamber (110) located on the seed substrate of the growth container, with one end on the seed substrate side being an opening and having a tapered portion (111) that narrows towards the end, and a supply pipe for supplying reaction gas having one end located inside the raw material supply chamber, and the raw material supply chamber is shaped such that a virtual line (K) along the direction normal to one surface of the wafer heating susceptor intersects with the seed substrate, passing through the end on the substrate side of the tapered portion. Claim 3 provides a cylindrical raw material supply chamber (110) located on a seed substrate in the growth container, with one end on the seed substrate side being an opening, the raw material supply chamber is provided with a shower head (182) at one end, having a through hole (182a) formed in a plate member, and a gas convection suppression plate (181) between the one end and the other end on the opposite side, which divides the lower space (S1) on the one end side and the upper space (S2) on the other end side, and a gas partition plate (183) between the shower head and the gas convection suppression plate, which divides the lower space into a first space (S1a) and a second space (S1b), and the supply piping includes a first supply pipe (210) for supplying gallium-based gas and a second supply pipe (220) for supplying ammonia-based gas, the first supply pipe is arranged to supply gallium-based gas to the first space and the second supply pipe is arranged to supply ammonia-based gas to the second space.

[0008] According to this method, when growing an epitaxial layer on a seed substrate, the reaction gas supplied to the outer edge of the seed substrate is diluted with a diluent gas, thereby suppressing the rapid growth of the epitaxial layer at the outer edge of the seed substrate. Consequently, the formation of epicrowns can be suppressed, and the in-plane uniformity of the epitaxial layer can be improved.

[0009] The reference numerals in parentheses attached to each component indicate an example of the correspondence between that component and the specific components described in the embodiments described later. [Brief explanation of the drawing]

[0010] [Figure 1] This is a schematic cross-sectional view showing a semiconductor wafer manufacturing apparatus in the first embodiment. [Figure 2] This is a schematic diagram of the vicinity of the seed substrate when growing an epitaxial layer. [Figure 3] This is a schematic cross-sectional view showing a semiconductor wafer manufacturing apparatus in the second embodiment. [Modes for carrying out the invention]

[0011] The embodiments of the present invention will be described below with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other will be denoted by the same reference numerals.

[0012] (First Embodiment) The first embodiment will be described with reference to the drawings. In this embodiment, a GaN wafer manufacturing apparatus (hereinafter simply referred to as a manufacturing apparatus) 1 will be described as a semiconductor wafer manufacturing apparatus that produces a GaN wafer 12 by growing an epitaxial layer 11 made of gallium nitride (hereinafter simply referred to as GaN) on a seed substrate 10.

[0013] As shown in Figure 1, the manufacturing apparatus 1 includes a growth container 100, a raw material supply chamber 110, a rotating device 120, a rotational displacement mechanism 160, a heating device 170, and the like. The manufacturing apparatus 1 also includes first to fifth supply pipes 210 to 250, etc., for supplying various gases to the growth container 100 for growing the epitaxial layer 11 made of GaN.

[0014] The growth vessel 100 has a cylindrical section 101 with a hollow section 101a that constitutes a reaction chamber, and a first lid 102 and a second lid 103 provided on the cylindrical section 101 that close the hollow section 101a. The cylindrical section 101 is made of quartz glass, boron nitride, etc., and in this embodiment it is cylindrical. The first lid 102 and the second lid 103 are made of SUS, etc., with the first lid 102 provided on the top end of the cylindrical section 101 and the second lid 103 provided on the bottom end of the cylindrical section 101. The growth vessel 100 is structured so that other components for growing the epitaxial layer 11 are placed inside the hollow section 101a, and the pressure inside the hollow section 101a can be maintained at a predetermined pressure by evacuating it.

[0015] The raw material supply chamber 110 is constructed by providing a coating film made of a material that is resistant to thermal etching, is a high-melting-point metallic material, and to which the GaN layer that forms the epitaxial layer 11 is difficult to adhere, or a coating film made of boron nitride, on a substrate composed of graphite, silicon carbide (SiC), boron nitride (BN), etc. The raw material supply chamber 110 is assembled to the first lid 102 at one end so that one end faces the second lid 103. Examples of materials that are resistant to thermal etching, are high-melting-point metallic materials, and to which the GaN layer is difficult to adhere include tantalum carbide (TaC), tungsten (W), tungsten carbide (WC), niobium carbide, etc. The coating film is composed mainly of at least one of these materials.

[0016] The first to fifth supply pipes 210 to 250 are provided in the first lid 102. Specifically, the first supply pipe 210 is a pipe that supplies gallium trichloride gas into the growth container 100 as a gallium-based gas for growing the epitaxial layer 11 made of GaN. The second supply pipe 220 is a pipe that supplies ammonia gas into the growth container 100 as an ammonia-based gas for growing the epitaxial layer 11 together with the gallium-based gas. The third supply pipe 230 is a pipe that supplies hydrogen gas to react with gallium trichloride gas to produce gallium monochloride gas. The first to third supply pipes 210 to 230 are provided in the first lid 102 such that one end of each pipe is located inside the raw material supply chamber 110.

[0017] In this embodiment, nitrogen gas as a carrier gas is also supplied together with the above-mentioned respective gases through the first to third supply pipes 210 to 230. Further, in this embodiment, chlorine gas as an etching gas is periodically supplied to the first supply pipe 210 in order to suppress clogging of the first supply pipe 210. And, in this embodiment, a gas containing gallium trichloride gas and ammonia gas corresponds to the reaction gas. Further, the manufacturing apparatus 1 of this embodiment is provided with the first to third supply pipes 210 to 230 in the first lid portion 102, and as will be described later, the wafer heating susceptor 130 on which the seed substrate 10 is disposed is disposed below the first to third supply pipes 210 to 230. For this reason, the reaction gas supplied from the first to third supply pipes 210 to 230 is supplied along the normal direction with respect to one surface 130a of the wafer heating susceptor 130 described later. Therefore, the manufacturing apparatus 1 of this embodiment can be said to have a downflow type gas supply structure that blows the reaction gas toward the seed substrate 10.

[0018] The fourth supply pipe 240 and the fifth supply pipe 250 are pipes for supplying a carrier gas for suppressing the reaction gas from flowing into the first lid portion 102 side into the growth container 100. The carrier gas supplied to the fourth and fifth supply pipes 240 and 250 is, for example, nitrogen gas. And the fourth supply pipe 240 and the fifth supply pipe 250 are provided in the first lid portion 102 such that one end portion side is located outside the raw material supply chamber 110. In this embodiment, an example in which the fourth supply pipe 240 and the fifth supply pipe 250 are respectively provided is described, but only one of the pipes may be provided, or the fourth supply pipe 240 and the fifth supply pipe 250 may be integrated. Further, a plurality of the fourth supply pipe 240 and the fifth supply pipe 250 may be provided on the circumference.

[0019] The rotating device 120 is disposed below the raw material supply chamber 110 (i.e., on the side of the second lid portion 103). The rotating device 120 of the present embodiment includes a wafer heating susceptor 130 on which a seed substrate 10 made of GaN for growing the epitaxial layer 11 is disposed, and a shaft 140 (i.e., a rotating shaft) connected to the wafer heating susceptor 130.

[0020] Similar to the raw material supply chamber 110, the wafer heating susceptor 130 is formed of a base material made of graphite or the like, and is provided with a coating film made of a material that is difficult to be thermally etched, is a high melting point metal material, and is a material to which a GaN layer is difficult to adhere, or a coating film made of boron nitride. The seed substrate 10 is attached to one surface 130a side of the wafer heating susceptor 130, which is located on the side of the first to third supply pipes 210 to 230. In the present embodiment, the wafer heating susceptor 130 is formed with a recess 131 on one surface 130a where the seed substrate 10 is disposed. The seed substrate 10 is disposed in the recess 131.

[0021] The shaft 140 is connected to the surface of the wafer heating susceptor 130 opposite to the surface 130a side where the seed substrate 10 is disposed. The wafer heating susceptor 130 is configured to be rotated as the shaft 140 rotates, and to be displaced together with the shaft 140 as the shaft 140 is displaced along the axial direction of the growth vessel 100 (i.e., the vertical direction in the drawing of FIG. 1). Note that the shaft 140 is formed of a base material made of graphite or the like, and is provided with a coating film made of a material that is difficult to be thermally etched, is a high melting point metal material, and is a material to which a GaN layer is difficult to adhere, or a coating film made of boron nitride.

[0022] Furthermore, the rotating device 120 of this embodiment has a dilution gas passage 150 formed therein for supplying dilution gas into the growth container 100 from around a recess 131 on one surface 130a of the wafer heating susceptor 130. The dilution gas passage 150 is configured, for example, by arranging piping or the like that constitutes the dilution gas passage 150 within the rotating device 120. The dilution gas used can be, for example, argon gas, helium gas, nitrogen gas, chlorine gas, hydrogen chloride gas, ammonia gas, etc.

[0023] In this embodiment, the raw material supply chamber 110 has a tapered portion 111 at one end located on the second lid portion 103 side. Specifically, the tapered portion 111 has its opposing sides spaced apart so that a virtual line K passing through the end located on the second lid portion 103 side and along the direction normal to the surface direction of the seed substrate 10 (i.e., the axial direction of the growth container 100) intersects with the seed substrate 10. In other words, the raw material supply chamber 110 has a tapered portion 111 at one end so that the reaction gas does not easily reach the outer edge of the seed substrate 10. For example, since the manufactured GaN wafer 12 usually has multiple chip formation regions in the surface direction of the GaN wafer 12, the tapered portion 111 is configured so that the virtual line K intersects with the outermost edge portion of the multiple chip formation regions.

[0024] The rotational displacement mechanism 160 is composed of gears, a motor, etc., and is connected to the shaft 140 to rotate and displace the shaft 140. When the rotational displacement mechanism 160 displaces the shaft 140, it displaces the shaft 140 (i.e., the seed substrate 10) so that the temperature of the growth surface of the epitaxial layer 11 becomes suitable for growth as the epitaxial layer 11 grows. In addition, when growing the epitaxial layer 11, the rotational displacement mechanism 160 of this embodiment rotates the shaft 140 so that the wafer heating susceptor 130 rotates at a rate of 200 revolutions per minute or more, although this is not particularly limited.

[0025] The heating device 170 heats the raw material supply chamber 110 and the growth container 100, and is composed of heating coils such as induction heating coils and direct heating coils, and is arranged to surround the growth container 100.

[0026] The above describes the configuration of the manufacturing apparatus 1 in this embodiment. Next, a method for manufacturing the epitaxial layer 11 (i.e., the GaN wafer 12) using the manufacturing apparatus 1 will be described.

[0027] First, the manufacturing apparatus 1 described above is prepared, and the seed substrate 10 is placed in a recess 131 formed on one surface 130a of the wafer heating susceptor 130. Then, the wafer heating susceptor 130 is rotated via the shaft 140 by the rotational displacement mechanism 160, and the position of the wafer heating susceptor 130 is adjusted. When the epitaxial layer 11 is growing, the height of the wafer heating susceptor 130 is adjusted in accordance with the growth rate of the epitaxial layer 11. This keeps the height of the growth surface of the epitaxial layer 11 almost constant, making it possible to effectively control the temperature distribution of the growth surface temperature.

[0028] Next, nitrogen gas is supplied from the first to fifth supply pipes 210 to 250, while the opening and closing rate of the exhaust valve is adjusted to maintain the pressure inside the growth container 100 at approximately atmospheric pressure. For example, nitrogen gas is supplied from the first to fifth supply pipes 210 to 250 at a rate of approximately 5 slm each.

[0029] Next, the heating device 170 is activated to first raise the temperature of the seed substrate 10 to approximately 500°C. Then, ammonia gas is supplied into the growth container 100 from the second supply pipe 220. This suppresses the release of nitrogen from the seed substrate 10 when raising its temperature.

[0030] Subsequently, the heating device 170 is adjusted so that the temperature of the seed substrate 10 reaches approximately 1050°C, which is the growth temperature of the epitaxial layer 11. Then, gallium trichloride gas is supplied to the growth container 100 from the first supply pipe 210, and hydrogen gas is supplied to the growth container 100 from the second supply pipe 240.

[0031] As a result, gallium monochloride is produced in the growth container 100 by the reaction shown in chemical formula 1 below.

[0032] (Chemical formula 1)GaCl3+H2→GaCl+2HCl Then, on the seed substrate 10, ammonia gas and gallium monochloride gas react, and an epitaxial layer 11 composed of GaN grows as shown in chemical formula 2 below.

[0033] (Chemical formula 2)GaCl+NH3→GaN+HCl+H2 In order to grow the epitaxial layer 11 of the GaN layer on the seed substrate 10, gallium monochloride gas may be directly introduced into the growth container 100 from the first supply pipe 210. However, gallium monochloride gas is more difficult to flow at low temperatures such as in pipes because its vapor pressure is lower than that of gallium trichloride gas. For this reason, in this embodiment, since it is difficult to supply gallium monochloride gas to the first supply pipe 210, gallium trichloride gas is supplied to the growth container 100 and then converted to gallium monochloride gas to grow the epitaxial layer 11 of the GaN layer.

[0034] Furthermore, immediately before or simultaneously with the supply of gallium trichloride gas from the first supply pipe 210 into the growth container 100, dilution gas is supplied from the dilution gas passage 150. As a result, as shown in Figure 2, the reaction gas supplied onto the outer edge of the seed substrate 10 is diluted, thereby suppressing excessive growth of the epitaxial layer 11 on the outer edge of the seed substrate 10. The flow rate of the dilution gas is, for example, several tens to several hundred sccm.

[0035] Furthermore, when a gas containing at least one of argon, helium, and nitrogen is supplied as a diluent, these gases do not readily react with the seed substrate 10 or the reaction gas. Therefore, the reaction gas supplied to the outer edge of the seed substrate 10 can be diluted without affecting the quality of the epitaxial layer 11, thereby suppressing the formation of epicrowns.

[0036] When a gas containing at least one of chlorine gas and hydrogen chloride gas is supplied as a diluent, these gases are etching gases. Therefore, the reaction gas supplied to the outer edge of the seed substrate 10 can be diluted while suppressing the deposition of gallium on the seed substrate 10 and the grown epitaxial layer 11. Thus, it is possible to grow an even higher quality epitaxial layer 11 while suppressing the formation of epicrowns.

[0037] When ammonia gas is supplied as a diluent, the ammonia gas reacts with gallium monochloride gas to form GaN. Our investigations have shown that the crystallinity of the outer edge of the epitaxial layer 11 grown on the seed substrate 10 may be lower than that of the inner edge. While the exact reason for this phenomenon is unclear, we hypothesize that as the seed substrate 10 approaches its outer edge, epicrown formation becomes more likely, and the reduced supply of ammonia gas contributes to the decrease in crystallinity. Our investigations have confirmed that supplying ammonia gas as a diluent improves the crystallinity of the outer edge of the epitaxial layer 11. Therefore, by supplying ammonia gas as a diluent, it is possible to suppress the formation of epicrowns while improving the crystallinity of the epitaxial layer 11 growing on the outer edge of the seed substrate 10.

[0038] After growing an epitaxial layer 11 on the seed substrate 10 to produce a GaN wafer 12, the supply of gallium trichloride gas, hydrogen gas, and ammonia gas is stopped. Then, the heating device 170 is stopped, the growth container 100 is filled with nitrogen gas, and the GaN wafer 12 is removed.

[0039] According to the embodiment described above, when growing the epitaxial layer 11 on the seed substrate 10, the reaction gas supplied to the outer edge of the seed substrate 10 is diluted with a diluent gas. This suppresses the rapid growth of the epitaxial layer 11 at the outer edge of the seed substrate 10. Consequently, the occurrence of epicrowns can be suppressed, and the in-plane uniformity of the epitaxial layer 11 can be improved.

[0040] (1) In this embodiment, by using a gas containing at least one of argon gas, helium gas, and nitrogen gas as a diluent gas, the formation of epicrowns can be suppressed without affecting the quality of the epitaxial layer 11.

[0041] (2) In this embodiment, by using a gas containing at least one of chlorine gas and hydrogen chloride gas as a diluent, it is possible to grow a high-quality epitaxial layer 11 while suppressing the generation of epicrowns.

[0042] (3) In this embodiment, by using a gas containing ammonia gas as a diluent gas, it is possible to suppress the generation of epicrowns while improving the crystallinity of the epitaxial layer 11 that grows on the outer edge of the seed substrate 10.

[0043] (4) In this embodiment, one end of the raw material supply chamber 110 is formed such that the imaginary line K intersects with the seed substrate 10. As a result, the reaction gas supplied into the raw material supply chamber 110 is less likely to directly reach the outer edge of the seed substrate 10, further suppressing the generation of epicrowns.

[0044] (Second Embodiment) A second embodiment will now be described. This embodiment is a modification of the raw material supply chamber 110 compared to the first embodiment. Other aspects are the same as in the first embodiment, so a detailed explanation will be omitted here.

[0045] In this embodiment, the manufacturing apparatus 1 is equipped with a gas convection suppression plate 181, a shower head 182, and a gas partition plate 183 in the raw material supply chamber 110. Specifically, the gas convection suppression plate 181 is provided between one end and the other end of the raw material supply chamber 110, and is provided to partition the lower space S1 on the one end side and the upper space S2 on the other end side.

[0046] The shower head 182 is constructed by forming multiple through holes 182a in a plate member and is installed in the opening at one end of the raw material supply chamber 110 (i.e., the tapered portion 111).

[0047] The gas partition plate 183 is provided to divide the lower space S1 into a first space S1a and a second space S1b. One end of the first and third supply pipes 210 and 230 are provided to be located in the first space S1a. One end of the second supply pipe 220 is provided to be located in the second space S1b.

[0048] In this embodiment described above, the reaction gas supplied onto the outer edge of the seed substrate 10 is diluted with a diluent gas, so the same effects as in the first embodiment can be obtained.

[0049] (1) In this embodiment, the lower space S1 is divided into a first space S1a and a second space S1b, with one end of the first and third supply pipes 210 and 230 provided in the first space S1a, and one end of the second supply pipe 220 provided in the second space S1b. Therefore, the reaction between gallium trichloride gas and ammonia gas in the raw material supply chamber 110 can be suppressed. Also, since one end of the first and third supply pipes 210 and 230 is provided in the first space S1a, the gallium trichloride gas can be converted to gallium monochloride gas in the first space S1a. Therefore, the accumulation of unreacted gallium trichloride gas on the seed substrate 10 can be suppressed, and the growth of the epitaxial layer 11 can be facilitated.

[0050] (Other embodiments) This disclosure is described in accordance with embodiments, but it is understood that this disclosure is not limited to such embodiments or structures. This disclosure also includes various modifications and variations within the scope of equivalents. In addition, various combinations and forms, as well as other combinations and forms that include only one, more, or fewer of those elements, fall within the scope and idea of ​​this disclosure.

[0051] For example, in each of the above embodiments, an example was described in which a rotational displacement mechanism 160 is provided to rotate and displace the wafer heating susceptor 130, but it is also possible to rotate only the wafer heating susceptor 130 and not displace it. In addition, the discharge port 104 may be located on the side of the first lid portion 102 of the growth container 100.

[0052] Furthermore, in each of the above embodiments, a manufacturing apparatus 1 for growing an epitaxial layer 11 made of GaN was described. However, in each of the above embodiments, for example, the manufacturing apparatus 1 may be one for growing an epitaxial layer 11 made of silicon carbide on a seed substrate 10 made of silicon carbide. In this case, the reaction gas can be appropriately changed to a gas necessary for epitaxial growth of silicon carbide. [Explanation of symbols]

[0053] 10 types of substrates 11 Epitaxial layer 100 growing containers 101a Hollow part 130 Wafer heating susceptor 130a one side 210~230 Supply piping

Claims

1. A semiconductor wafer manufacturing apparatus, A cylindrical growth container (100) into which a reaction gas is introduced and an epitaxial layer (11) is grown in the hollow section (101a) that constitutes the reaction chamber, A wafer heating susceptor (130) is disposed within the hollow portion of the growth container, and a seed substrate (10) on which the epitaxial layer is grown is placed on one surface (130a), The growth container is provided with supply piping (210-230) that supplies a reaction gas for growing the epitaxial layer to the growth container along the direction normal to one surface, The wafer heating susceptor is configured such that a dilution gas is supplied to the growth container from around the portion of one surface (130a) on which the seed substrate is placed, The reaction gas includes a gallium-based gas and an ammonia-based gas. The aforementioned dilution gas is a gas containing an ammonia-based gas in a semiconductor wafer manufacturing apparatus.

2. A semiconductor wafer manufacturing apparatus, A cylindrical growth container (100) into which a reaction gas is introduced and an epitaxial layer (11) is grown in the hollow section (101a) that constitutes the reaction chamber, A wafer heating susceptor (130) is disposed within the hollow portion of the growth container, and a seed substrate (10) on which the epitaxial layer is grown is placed on one surface (130a), The growth container is provided with supply piping (210-230) that supplies a reaction gas for growing the epitaxial layer to the growth container along the direction normal to one surface, The wafer heating susceptor is configured such that a dilution gas is supplied to the growth container from around the portion of one surface (130a) on which the seed substrate is placed, The growth container has a cylindrical raw material supply chamber (110) provided in the portion located on the seed substrate, with one end on the seed substrate side being an opening and having a tapered portion (111) that narrows towards the end, The supply pipe to which the reaction gas is supplied has one end located in the raw material supply chamber. The semiconductor wafer manufacturing apparatus has a raw material supply chamber that passes through one end located on the seed substrate side in the tapered portion, and has a shape such that a virtual line (K) along the direction normal to one surface of the wafer heating susceptor intersects with the seed substrate.

3. A semiconductor wafer manufacturing apparatus, A cylindrical growth container (100) into which a reaction gas is introduced and an epitaxial layer (11) is grown in the hollow section (101a) that constitutes the reaction chamber, A wafer heating susceptor (130) is disposed within the hollow portion of the growth container, and a seed substrate (10) on which the epitaxial layer is grown is placed on one surface (130a), The growth container is provided with supply piping (210-230) that supplies a reaction gas for growing the epitaxial layer to the growth container along the direction normal to one surface, The wafer heating susceptor is configured such that a dilution gas is supplied to the growth container from around the portion of one surface (130a) on which the seed substrate is placed, The growth container has a cylindrical raw material supply chamber (110) located on the seed substrate, with one end on the seed substrate side being an opening. The raw material supply chamber is provided with a shower head (182) having a through hole (182a) formed in a plate member at one end, and a gas convection suppression plate (181) between the one end and the other end opposite to it, which divides the lower space (S1) on the one end side and the upper space (S2) on the other end side, and further, a gas partition plate (183) is provided between the shower head and the gas convection suppression plate, which divides the lower space into a first space (S1a) and a second space (S1b). The supply piping comprises a first supply piping (210) for supplying gallium-based gas and a second supply piping (220) for supplying ammonia-based gas. The first supply piping is arranged to supply the gallium-based gas to the first space, The second supply piping is arranged to supply the ammonia-based gas to the second space in a semiconductor wafer manufacturing apparatus.

4. The semiconductor wafer manufacturing apparatus according to claim 2 or 3, wherein the raw material supply chamber is configured such that the substrate is covered with a coating film mainly composed of tantalum carbide, tungsten, tungsten carbide, or niobium carbide, or a coating film composed of boron nitride.

5. The semiconductor wafer manufacturing apparatus according to any one of claims 1 to 3, wherein the wafer heating susceptor is configured such that the substrate is covered with a coating film mainly composed of tantalum carbide, tungsten, tungsten carbide, or niobium carbide, or a coating film composed of boron nitride.

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