A method for controlling a lifting device, a control program, a control device, a method for manufacturing a single crystal silicon ingot, and a single crystal silicon ingot.

Abstract

To provide a method for controlling a pulling apparatus capable of improving the quality of a single crystal silicon ingot, a control program, a controller, a method for manufacturing the single crystal silicon ingot, and the single crystal silicon ingot.SOLUTION: A method for controlling a pulling apparatus 100 used for a single crystal silicon ingot I comprises the steps of: acquiring actual data obtained by associating a measured value of oxygen concentration in the single crystal silicon ingot I manufactured by the pulling apparatus 100 with an operation amount of the pulling apparatus 100 when manufactured; forming an estimated model for estimating oxygen concentration in the single crystal silicon ingot I manufactured by the pulling apparatus 100 on the basis of the actual data; controlling the operation amount inputted into the estimated model so that an estimated value of the oxygen concentration in the single crystal silicon ingot I by the estimated model is target concentration; and determining the controlled operation amount as an operation amount when manufacturing the single crystal silicon ingot I in the next batch of the pulling apparatus 100.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] This disclosure relates to a control method for a lifting device, a control program, a control device, a method for manufacturing a single-crystal silicon ingot, and a single-crystal silicon ingot. [Background technology]

[0002] Conventionally, systems for predicting and controlling the oxygen concentration of silicon ingots are known (see Patent Document 1, etc.). [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2005-162558 [Overview of the project] [Problems that the invention aims to solve]

[0004] There is a need to improve the quality of single-crystal silicon ingots.

[0005] Therefore, the purpose of this disclosure is to provide a control method for a pulling device, a control program, a control device, a method for manufacturing a single crystal silicon ingot, and a single crystal silicon ingot that can improve the quality of the single crystal silicon ingot. [Means for solving the problem]

[0006] One embodiment of this disclosure that solves the above problems is as follows. [1] A method for controlling a single-crystal silicon ingot pulling device, The steps include: acquiring actual data that correlates the measured oxygen concentration of the single-crystal silicon ingot produced by the aforementioned pulling device with the amount of operation of the pulling device during production; The steps include generating an estimation model for estimating the oxygen concentration of the single-crystal silicon ingot produced by the pulling device based on the aforementioned performance data, The steps include adjusting the input variable to the estimation model so that the estimated oxygen concentration of the single-crystal silicon ingot obtained by the estimation model becomes the target concentration, The steps include determining the adjusted operating amount as the operating amount when manufacturing single-crystal silicon ingots in the next batch using the pulling device, and A method for controlling a lifting device, including the method described above. [2] The method for controlling a lifting device according to [1] above, wherein in the step of generating the estimation model, at least a portion of the operating amounts of the lifting device is selected, and a regression equation is generated as the estimation model, wherein the influence of the selected operating amounts is used as a coefficient. [3] The method for controlling a lifting device according to [2] above, wherein in the step of generating the estimation model, the amounts of operation of the lifting device are ranked, and the amount of operation of the lifting device is selected based on the ranking. [4] In the step of acquiring the performance data, one or more sets of performance data for each of the two batches of the lifting device are acquired. A method for controlling a lifting device according to any one of [1] to [3] above, wherein in the step of generating the estimation model, difference data of the actual data for each of two batches is generated for at least one set of actual data from the one or two or more sets of actual data, and a regression equation is generated as the estimation model to calculate the difference in the amount of operation of the lifting device based on the difference data of at least one set. [5] A method for controlling a lifting apparatus according to any one of [1] to [4] above, wherein in the step of acquiring the performance data, the oxygen concentration measurement values ​​for each of a plurality of sections in the crystal axis direction of the single crystal silicon ingot are acquired as the measurement values ​​of the oxygen concentration of the single crystal silicon ingot. [6] A method for controlling a pulling apparatus according to [5] above, wherein in the step of generating the estimation model, a segment estimation model corresponding to each segment in the crystal axis direction of the single crystal silicon ingot is generated. [7] A method for controlling a lifting apparatus according to [6] above, wherein in the step of adjusting the amount of manipulation, the amount of manipulation is adjusted based on the division estimation model when each division of the single crystal silicon ingot is lifted. [8] In the step of obtaining the performance data, first measurement data obtained by measuring the oxygen concentration of the single crystal silicon ingot by a first method and second measurement data obtained by measuring the oxygen concentration of the single crystal silicon ingot by a second method are obtained, and data interpolated from the first measurement data by the second measurement data is obtained as the measured value of the oxygen concentration of the single crystal silicon ingot. The control method for the hoisting device according to any one of [1] to [7] above. [9] A control program that causes a processor to execute the control method for the hoisting device according to any one of [1] to [8] above.

[10] A control device including a control unit that executes the control method for the hoisting device according to any one of [1] to [8] above.

[11] A method for manufacturing a single crystal silicon ingot, including the step of manufacturing a single crystal silicon ingot with a hoisting device controlled by executing the control method for the hoisting device according to any one of [1] to [8] above.

[12] A single crystal silicon ingot manufactured with a hoisting device controlled by executing the control method for the hoisting device according to any one of [1] to [8] above.

Effect of the Invention

[0007] According to the control method, control program, control device, method for manufacturing a single crystal silicon ingot, and single crystal silicon ingot according to the present disclosure, the quality of the single crystal silicon ingot can be improved.

Brief Description of the Drawings

[0008] [Figure 1] It is a block diagram showing a configuration example of a manufacturing system according to an embodiment of the present disclosure. [Figure 2] It is a cross-sectional view showing a configuration example of the hoisting device in a cross-section along the hoisting axis. [Figure 3] It is a schematic diagram explaining a part of a single crystal silicon ingot. [Figure 4] It is a flowchart showing an example of the procedure of the control method according to an embodiment of the present disclosure. [Figure 5A] It is a diagram showing a histogram of the oxygen concentration of a single crystal silicon ingot manufactured by setting conditions for an evaluation target device according to a control method related to a comparative example. [Figure 5B] It is a diagram showing an example of a histogram of the oxygen concentration of a single crystal silicon ingot manufactured by setting conditions for an evaluation target device according to a control method related to an embodiment of the present disclosure. [Figure 6A] It is a diagram showing a histogram of the oxygen concentration of a single crystal silicon ingot manufactured by setting conditions for another evaluation target device according to a control method related to a comparative example. [Figure 6B] It is a diagram showing an example of a histogram of the oxygen concentration of a single crystal silicon ingot manufactured by setting conditions for another evaluation target device according to a control method related to an embodiment of the present disclosure. [Figure 7] It is a graph showing an example of actual data of the oxygen concentration at each part of a single crystal silicon ingot.

Embodiments for Carrying Out the Invention

[0009] (Configuration Example of Single Crystal Silicon Ingot Manufacturing System 1) As shown in FIG. 1, a single crystal silicon ingot manufacturing system 1 according to an embodiment of the present disclosure includes a pulling device 100 for a single crystal silicon ingot, a control device 50, and a data server 60. In the manufacturing system 1, the data server 60 stores past manufacturing performance data of the pulling device 100. Based on the data stored in the data server 60, the control device 50 determines an operation amount of the pulling device 100 so as to control the oxygen concentration of the single crystal silicon ingot manufactured by the pulling device 100 to a target concentration. Hereinafter, a configuration example of the manufacturing system 1 will be described. The number of pulling devices 100 included in the manufacturing system 1 is not limited to three, and may be four or more or two or less. The number of control devices 50 or data servers 60 included in the manufacturing system 1 is not limited to one each, and may be two or more.

[0010] <Control Device 50> The control device 50 comprises a control unit 52 and a storage unit 54. The control unit 52 may include at least one processor. The processor can execute programs that realize various functions of the control unit 52. The processor may be implemented as a single integrated circuit. An integrated circuit is also called an IC (Integrated Circuit). The processor may be implemented as a plurality of communicably connected integrated circuits and discrete circuits. The processor may be implemented based on various other known technologies.

[0011] The storage unit 54 stores various information such as data acquired from the lifting device 100 or data set in the lifting device 100, or programs executed by the control unit 52. The storage unit 54 may include an electromagnetic storage medium such as a magnetic disk, or it may include a memory such as a semiconductor memory or magnetic memory. The storage unit 54 may include a non-temporary computer-readable medium. The storage unit 54 may function as the work memory of the control unit 52. At least a part of the storage unit 54 may be included in the control unit 52. At least a part of the storage unit 54 may be configured as a separate storage device from the control device 50.

[0012] The control device 50 may further include a communication unit for sending and receiving data to and from the hoisting device 100 or the data server 60. The communication unit is connected to the hoisting device 100 or the data server 60 in a communicative manner. The communication unit may be connected to the hoisting device 100 or the data server 60 in a communicative manner via a network. The communication unit may be connected to the hoisting device 100 or the data server 60 in a wired or wireless manner. The communication unit may include a communication module that connects to the network or the hoisting device 100 or the data server 60. The communication module may include a communication interface such as a LAN (Local Area Network). The communication module may implement communication using various communication methods such as 4G or 5G. The communication method implemented by the communication unit is not limited to the examples described above and may include various other methods. At least a part of the communication unit may be included in the control unit 52.

[0013] The control device 50 may further include a display device that outputs visual information such as images, characters, or graphics. The display device may include, for example, an LCD (Liquid Crystal Display), an organic EL (Electro-Luminescence) display or an inorganic EL display, or a PDP (Plasma Display Panel). The display device is not limited to these displays and may include various other types of displays. The display device may include a light-emitting device such as an LED (Light Emitting Diode) or an LD (Laser Diode). The display device is not limited to these and may include various other devices.

[0014] <Data Server 60> As described above, the data server 60 stores past manufacturing performance data of the lifting device 100 and outputs the stored data to the control device 50. The data server 60 may be configured to include an electromagnetic storage medium such as a magnetic disk, or it may be configured to include memory such as a semiconductor memory or magnetic memory. The data server 60 may be equipped with a processor for storing and outputting data. The data server 60 may be equipped with a communication unit for sending and receiving data to and from the lifting device 100 or the control device 50. The data server 60 may be configured separately from the control device 50. At least a part of the data server 60 may be configured integrally with the control device 50.

[0015] <Lifting device 100> As shown in Figure 2, the single-crystal silicon ingot pulling device 100 comprises a main chamber 10, a pull chamber 11, a crucible 16, a shaft 18, a shaft drive mechanism 20, a cylindrical heat shield 22, a cylindrical heater 24, a cylindrical heat insulator 26, a seed chuck 28, a pulling wire 30, a wire lifting mechanism 32, and a pair of electromagnets 34.

[0016] The main chamber 10 is configured to house a crucible 16 inside. The main chamber 10 is assumed to be a bottomed cylindrical shape. The pull chamber 11 has the same central axis as the main chamber 10 and is located above the main chamber 10. The pull chamber 11 is assumed to be a cylindrical shape with a smaller diameter than the main chamber 10. A gate valve 12 is provided between the main chamber 10 and the pull chamber 11. When the gate valve 12 is opened, the space inside the main chamber 10 and the space inside the pull chamber 11 communicate with each other. When the gate valve 12 is closed, the space inside the main chamber 10 and the space inside the pull chamber 11 are separated from each other. A gas inlet 13 is provided at the top of the pull chamber 11 for introducing an inert gas such as Ar (argon) gas into the main chamber 10. A gas outlet 14 is provided at the bottom of the main chamber 10 for sucking out and discharging gas from inside the main chamber 10 by driving a vacuum pump.

[0017] Crucible 16 is located in the center of the main chamber 10 and contains the silicon melt M. Crucible 16 has a double structure consisting of a quartz crucible 16A and a graphite crucible 16B. Quartz crucible 16A directly supports the silicon melt M on its inner surface. Graphite crucible 16B supports quartz crucible 16A from the outside. Assume that the upper end of quartz crucible 16A is higher than the upper end of graphite crucible 16B. That is, assume that the upper end of quartz crucible 16A protrudes from the upper end of graphite crucible 16B.

[0018] The shaft 18 penetrates vertically through the bottom of the main chamber 10 and supports the crucible 16 at its upper end. The shaft drive mechanism 20 rotates and raises the crucible 16 via the shaft 18.

[0019] The thermal shield 22 is positioned above the crucible 16, surrounding the single-crystal silicon ingot I being pulled up from the silicon molten M. Specifically, the thermal shield 22 comprises an inverted truncated cone-shaped shield body 22A, an inner flange portion 22B extending horizontally from the lower end of the shield body 22A toward the pulling axis X side (inward), and an outer flange portion 22C extending horizontally from the upper end of the shield body 22A toward the chamber side (outward). The outer flange portion 22C is fixed to the insulating body 26. The thermal shield 22 adjusts the amount of high-temperature radiant heat incident on the growing ingot I from the silicon molten M, the heater 24, and the side walls of the crucible 16, and adjusts the amount of heat diffusion near the crystal growth interface. The thermal shield 22 plays a role in controlling the temperature gradient in the direction of the pulling axis X in the central and outer periphery of the single-crystal silicon ingot I.

[0020] The cylindrical heater 24 is positioned within the main chamber 10 so as to surround the crucible 16. The heater 24 is a resistance heating heater made of carbon, which melts the silicon raw material placed in the crucible 16 to form a silicon melt M, and further heats the formed silicon melt M to maintain it.

[0021] The cylindrical insulator 26 is positioned below the upper end of the heat shield 22, spaced apart from the outer surface of the heater 24, and along the inner surface of the main chamber 10. The insulator 26 provides a heat retention effect to the area within the main chamber 10, particularly below the heat shield 22, and has the function of making it easier to maintain the silicon molten M in the crucible 16.

[0022] Above the crucible 16, a lifting wire 30 is positioned coaxially with the shaft 18, holding a seed chuck 28 that holds a seed crystal S at its lower end. A wire lifting mechanism 32 moves the lifting wire 30 up and down at a predetermined speed, rotating it in the opposite or same direction as the shaft 18.

[0023] The pair of electromagnets 34 are positioned symmetrically with respect to the lifting axis X, outside the main chamber 10, within a height range that encompasses the crucible 16. By passing current through the coils of this pair of electromagnets 34, a horizontal magnetic field can be generated that forms a horizontal magnetic field distribution relative to the silicon molten M. The magnetic field strength can be controlled by the magnitude of the current flowing through the coils.

[0024] In Figure 2, a pair of electromagnets 34 are arranged to generate a horizontal magnetic field. Alternatively, the electromagnets 34 may be arranged to generate a cusp magnetic field that forms a cusp-type magnetic field distribution with respect to the silicon melt M. The arrangement of the electromagnets 34 that generate the cusp magnetic field follows a standard method. Furthermore, if no magnetic field is applied to the silicon melt M during crystal growth, the electromagnets 34 do not need to be arranged.

[0025] Each component of the pulling device 100 can be adjusted to a different shape as appropriate according to the specifications of the single-crystal silicon ingot being manufactured. In other words, each pulling device 100 can be designed with different specifications. The pulling devices 100 may be classified into predetermined groups based on their respective specifications. The pulling devices 100 may also be classified into groups based on the product specifications or manufacturing specifications of the single-crystal silicon ingot manufactured by each pulling device 100. Product specifications may include, for example, crystal diameter, electrical conductivity type, electrical resistivity, or oxygen concentration. Manufacturing specifications may include, for example, pulling speed, crystal rotation speed, crucible rotation speed, Ar gas flow rate, furnace pressure, or magnetic field strength. Furthermore, the pulling devices 100 may be classified into groups based on the specifications of the pulling device 100 that manufactures the single-crystal silicon ingot. The specifications of the pulling device 100 may include, for example, the chamber shape, and may also include the shape or configuration of the carbon components housed in the chamber, the crucible shape, the heater shape, or the presence or absence of a cooler.

[0026] <<Manufacturing process for single-crystal silicon ingots using the pulling device 100>> The pulling device 100 can manufacture single-crystal silicon ingots by performing the process described below.

[0027] [Raw material filling process] First, silicon raw materials such as polycrystalline silicon nuggets are filled into a quartz crucible 16A located inside the main chamber 10. At this time, the gate valve 12 is controlled to be in the open position. The main chamber 10 and the pull chamber 11 are maintained under reduced pressure and in an inert gas atmosphere such as Ar gas. The crucible 16 is located at the bottom of the main chamber 10 so that the silicon raw materials do not come into contact with the heat shield 22.

[0028] [Raw material melting process] Next, the silicon raw material inside the crucible 16 is heated by the heater 24 so that it melts. As the silicon raw material melts, a silicon molten liquid M is formed inside the quartz crucible 16A. After that, the crucible 16 is raised to the starting position. This "raw material melting process" is defined as the period from when heating by the heater 24 begins until the crucible 16 has finished rising.

[0029] [Liquid application process] Next, the wire lifting mechanism 32 lowers the lifting wire 30, causing the seed crystal S to come into contact with the silicon melt M.

[0030] [Crystal growth process] Next, a single-crystal silicon ingot I is pulled up from the silicon melt M. Specifically, the single-crystal silicon ingot I is grown below the seed crystal S by rotating the crucible 16 and the pulling wire 30 in a predetermined direction while pulling up the pulling wire 30. As the growth of the ingot I progresses, the amount of silicon melt M decreases. Therefore, the level of the melt is maintained by raising the crucible 16. In this specification, the "crystal growth process" is defined as the period from the time when the raising of the pulling wire 30 begins until the time when the growth of the ingot I is completed (the time when the ingot I is separated from the silicon melt M).

[0031] Referring to Figure 3, in the crystal growth process, first, seed narrowing (necking) is performed by the dash method to make the single crystal dislocation-free, thereby forming the neck portion I nNext, a shoulder portion I is formed where the diameter of the single-crystal silicon ingot gradually increases along the crystal growth direction. s The silicon is grown (first step). Then, when the single-crystal silicon ingot reaches the desired diameter, the diameter is kept constant and the straight body section I b This is cultivated (second process). Straight barrel section I b After growing to a predetermined length, tail reduction is performed, resulting in a tail portion I where the diameter of the single-crystal silicon ingot gradually decreases along the crystal growth direction. t The following is formed (third step).

[0032] [Ingot extraction process] Next, the lifted single-crystal silicon ingot I is separated from the silicon molten liquid M. The single-crystal silicon ingot I rises within the main chamber 10 and is housed in the pull chamber 11 above the main chamber 10. After the single-crystal silicon ingot I is housed in the pull chamber 11, the gate valve 12 is controlled to a closed state. The single-crystal silicon ingot I is left in the pull chamber 11 with the gate valve 12 closed to cool down until it reaches a removal temperature of, for example, 500°C or less. Finally, the cooled single-crystal silicon ingot I is removed from the pull chamber 11. Specifically, with the gate valve 12 controlled to be closed, the pull chamber 11 moves up and down and rotates, causing the single-crystal silicon ingot I to descend within the pull chamber 11 and be loaded onto a transport trolley.

[0033] Through the above process, one single-crystal silicon ingot I is manufactured.

[0034] (Example of operation for determining the amount of manipulation of the lifting device 100) In the manufacturing system 1 according to this embodiment, the control device 50 determines the amount of operation of the pulling device 100 so that the oxygen concentration of the single-crystal silicon ingot produced by the pulling device 100 can be controlled to a target concentration, as described above. An example of the operation of the control device 50 will be specifically described below.

[0035] <Acquisition of performance data> The oxygen concentration of the single-crystal silicon ingot produced by the pulling device 100 can be controlled according to the controllable parameters set in the pulling device 100. The parameters that can be set as controllable parameters of the pulling device 100 to control the oxygen concentration are collectively referred to as pulling information. Pulling information may include, for example, the pulling speed, crystal rotation speed, crucible rotation speed, Ar gas flow rate, furnace pressure, heater power, heater temperature, melt temperature, magnetic field strength, crucible position, gap, or the time for which the heater 24 is turned on. The melt temperature may include the melt temperature in the dip process, which adjusts the liquid temperature before the crystal growth process. The melt temperature may include the melt temperature in the neck process, which removes dislocations introduced when the seed crystal is deposited. The melt temperature may include the melt temperature in the shoulder process, which is the initial stage of the crystal growth process and increases the diameter of the crystal.

[0036] The oxygen concentration of the single-crystal silicon ingot produced by the lifting device 100 may be affected by the specifications of each part of the lifting device 100, such as its shape or dimensions, or by the usage time of each part of the lifting device 100 after maintenance. Factors that affect the oxygen concentration but cannot be set as an operating variable for the lifting device 100 are collectively referred to as material information. Material information may include, for example, the usage time of the parts inside the furnace, or the dimensions and weight of the quartz crucible 16A.

[0037] The oxygen concentration of the single-crystal silicon ingots produced in the next batch by the pulling device 100 is determined based on the pulling information set in the pulling device 100 and the current material information of the pulling device 100. In other words, the pulling information and material information are factors that affect the oxygen concentration of the single-crystal silicon ingots produced in the next batch.

[0038] The control unit 52 of the control device 50 can estimate the oxygen concentration of single-crystal silicon ingots to be manufactured in the next batch based on the relationship between the measurement data of the oxygen concentration of single-crystal silicon ingots manufactured in past batches and the pulling information and material information at the time of manufacturing those single-crystal silicon ingots. The data representing the relationship between the measurement data of the oxygen concentration of single-crystal silicon ingots manufactured in past batches and the pulling information and material information at the time of manufacturing those single-crystal silicon ingots is also called performance data.

[0039] The control unit 52 may acquire performance data and store it in the data server 60. The control unit 52 may acquire pulling information and material information from the pulling device 100 when single-crystal silicon ingots were manufactured in past batches. The control unit 52 may acquire pulling information and material information from the pulling device 100 when single-crystal silicon ingots were manufactured in past batches as information entered by the operator operating the pulling device 100. The control unit 52 may acquire oxygen concentration measurement data of single-crystal silicon ingots manufactured in past batches from an oxygen concentration measuring device for single-crystal silicon ingots, or as information entered by the operator who performed the measurement. The oxygen concentration measuring device for single-crystal silicon ingots may be configured as a device that measures oxygen concentration based on various methods such as the FRS (Full Rod Spectroscopy) method or the FTIR (Fourier Transform Infra-red Spectroscopy) method. The FRS method is a technique for measuring the average oxygen concentration in the radial direction of a cylindrically ground single-crystal silicon ingot by irradiating it with infrared light from the lateral (radial) direction and measuring the absorption intensity of the infrared light. The FRS method can measure the oxygen concentration distribution in the growth axis direction of the ingot by scanning the infrared light incident from the lateral (radial) direction along the growth axis of the single-crystal silicon ingot and measuring the absorption intensity of the infrared light at each point along the growth axis.

[0040] The control unit 52 may store data in the data server 60 as performance data, which associates the pulling information and material information when a predetermined single-crystal silicon ingot is manufactured with the measurement data of the oxygen concentration of the predetermined single-crystal silicon ingot. If the manufacturing system 1 is equipped with multiple pulling devices 100, the control unit 52 may store the performance data separately for each pulling device 100. The control unit 52 may store the performance data of pulling devices 100, which are classified according to the specifications of the pulling device 100, separately for each specification of the pulling device 100. The control unit 52 may store the performance data separately for each type of single-crystal silicon ingot manufactured. The control unit 52 may associate the performance data stored in the data server 60 with labels that identify the pulling device 100, the specifications of the pulling device 100, or the item, etc.

[0041] <Generation of estimation models> The control unit 52 of the control device 50 generates a model for estimating the manipulated variables necessary to control the oxygen concentration of the single-crystal silicon ingot produced by the lifting device 100 to a target concentration. The model for estimating the manipulated variables is also called an estimation model.

[0042] The control unit 52 may extract factors that significantly affect the oxygen concentration of the single-crystal silicon ingot by performing multiple regression analysis of the actual data.

[0043] <<Acquisition of performance data>> The control unit 52 acquires performance data. The control unit 52 may, for example, specify the lifting device 100 to be used to estimate the operation volume for the next batch, and the data server 60 or an address within the data server 60 where the performance data for that lifting device 100 is stored.

[0044] The control unit 52 may specify data to be excluded from the data to be acquired. In other words, the control unit 52 may specify data that will not be acquired. For example, the control unit 52 may specify actual data for when a part such as a B heater, CCM crucible, L heater, lower ring, outer cylinder, or spill tray has been used for the first time as data to be excluded and exclude it from the analysis.

[0045] <<Pre-processing>> The control unit 52 may perform preprocessing of the actual data before performing multiple regression analysis. As preprocessing, the control unit 52 may perform, for example, the following procedure: The control unit 52 may calculate the difference between the measurement data of the oxygen concentration of single-crystal silicon ingots manufactured in a predetermined batch and the measurement data of the oxygen concentration of single-crystal silicon ingots manufactured in the next batch. The control unit 52 may calculate the difference between the pull-out information and material information when single-crystal silicon ingots were manufactured in a predetermined batch and the pull-out information and material information when single-crystal silicon ingots were manufactured in the next batch. The control unit 52 may generate difference data that associates the difference in the measurement data of the oxygen concentration of single-crystal silicon ingots between the predetermined batch and the next batch with the difference in the pull-out information and material information between the predetermined batch and the next batch.

[0046] The control unit 52 may generate difference data by calculating the difference between any two batches, not limited to the difference between two consecutive batches.

[0047] The control unit 52 may generate difference data for multiple combinations of two batches. Specifically, the control unit 52 may acquire data for two batches to generate difference data, as described below.

[0048] In the production of one batch, if only one single-crystal silicon ingot is pulled from one quartz crucible 16A, the control unit 52 may, for example, generate difference data between the measurement data of the first batch of single-crystal silicon ingots and the measurement data of the second batch of single-crystal silicon ingots. The control unit 52 may generate difference data between the measurement data of the third batch of single-crystal silicon ingots and the measurement data of the fourth batch of single-crystal silicon ingots. The control unit 52 may generate difference data between the measurement data of the fifth batch of single-crystal silicon ingots and the measurement data of the sixth batch of single-crystal silicon ingots. It is preferable for the control unit 52 to generate difference data between the measurement data of single-crystal silicon ingots from two consecutive batches.

[0049] In the so-called multiple-pulling method, where multiple single-crystal silicon ingots are pulled from one quartz crucible 16A during batch manufacturing, the control unit 52 may generate difference data between the measurement data of each single-crystal silicon ingot in one batch and the measurement data of each single-crystal silicon ingot in other batches. For example, if three single-crystal silicon ingots are pulled from one quartz crucible 16A during batch manufacturing, the control unit 52 may generate difference data between the measurement data of the first single-crystal silicon ingot in the first batch and the measurement data of the first single-crystal silicon ingot in the second batch. The control unit 52 may generate difference data between the measurement data of the second single-crystal silicon ingot in the first batch and the measurement data of the second single-crystal silicon ingot in the second batch. The control unit 52 may generate difference data between the measurement data of the third single-crystal silicon ingot in the first batch and the measurement data of the third single-crystal silicon ingot in the second batch.

[0050] Next, the control unit 52 may generate difference data between the measurement data of the first, second, and third single-crystal silicon ingots of the third batch and the measurement data of the first, second, and third single-crystal silicon ingots of the fourth batch. The control unit 52 may also generate difference data between the measurement data of the first, second, and third single-crystal silicon ingots of the fifth batch and the measurement data of the first, second, and third single-crystal silicon ingots of the sixth batch. Preferably, the control unit 52 generates difference data of the measurement data of single-crystal silicon ingots from two consecutive batches.

[0051] The above explanation describes an example where three single-crystal silicon ingots are pulled from one quartz crucible 16A during one batch of production. The number of silicon ingots pulled from one quartz crucible 16A is not limited to three; it may be two, four, or more.

[0052] The control unit 52 may directly apply the difference data generated for each of the multiple combinations to the multivariate analysis described later. The control unit 52 may generate difference data by merging the difference data generated for each of the multiple combinations for each lifting device 100 as data to be applied to the multivariate analysis described later. The control unit 52 may generate difference data by merging the difference data generated for each of the multiple combinations for each specification of the lifting device 100 as data to be applied to the multivariate analysis described later. The control unit 52 may generate difference data by merging the difference data generated for each of the multiple combinations for each item as data to be applied to the multivariate analysis described later.

[0053] The control unit 52 may set the change in the manipulated variable to 0 in the generated differential data if the change in the manipulated variable is below the exclusion threshold. For example, the control unit 52 may set the change in the crucible rotation speed in the differential data to 0 if the change in the crucible rotation speed is 0.001 rpm or less. For example, the control unit 52 may set the change in the Ar gas flow rate in the differential data to 0 if the change in the Ar gas flow rate is 1 L / min or less. For example, the control unit 52 may set the change in the furnace pressure in the differential data to 0 if the change in furnace pressure is 0.1 torr or less.

[0054] The control unit 52 may exclude the generated differential data if the change in oxygen concentration (ΔOi) is outside the range. For example, the control unit 52 may exclude the differential data if the absolute value of the change in oxygen concentration (ΔOi) is 1 × 10⁻⁶. 17 atoms / cm 3 You may exclude the difference data that exceeds the specified threshold.

[0055] <<Modeling>> The control unit 52 generates an estimation model for estimating the oxygen concentration of a single-crystal silicon ingot using differential data generated by performing preprocessing on the actual data. The process of generating the estimation model is also called modeling. An example of the operation of the control unit 52 performing modeling is described below. If the manufacturing system 1 is equipped with multiple pulling devices 100, the control unit 52 may perform modeling for each of the multiple pulling devices 100 and generate an estimation model to be applied to each of the multiple pulling devices 100. The control unit 52 may divide the multiple pulling devices 100 into groups, perform modeling for each group, and generate an estimation model to be applied to the pulling device 100 belonging to each group. The pulling devices 100 may be classified into groups based on the product specifications or manufacturing specifications of the single-crystal silicon ingots produced by each pulling device 100. Product specifications may include, for example, crystal diameter, electrical conductivity type, electrical resistivity, or oxygen concentration. The manufacturing specifications may include, for example, the pulling speed, crystal rotation speed, crucible rotation speed, Ar gas flow rate, furnace pressure, or magnetic field strength. Furthermore, the pulling devices 100 may be classified into groups based on their specifications for manufacturing single-crystal silicon ingots. The specifications of the pulling device 100 may include, for example, the chamber shape, and may also include the shape or configuration of carbon components housed within the chamber, the crucible shape, the heater shape, or the presence or absence of a cooler.

[0056] The control unit 52 performs multivariate analysis on the difference data or merged difference data generated by performing preprocessing on the actual data. If no preprocessing has been performed on the actual data, the control unit 52 performs multivariate analysis on the actual data. In this embodiment, the control unit 52 performs multiple regression analysis as the multivariate analysis. The control unit 52 is not limited to multiple regression analysis and may perform various other methods as the multivariate analysis.

[0057] The control unit 52 calculates the degree of influence of the explanatory variables on the dependent variable by performing multiple regression analysis on the differential data, merged differential data, or actual data, and generates a linear or nonlinear regression equation with the degree of influence as the coefficient. The dependent variable is the oxygen concentration of the single-crystal silicon ingot. The explanatory variables may include items of pulling information or material information, such as Ar gas flow rate, furnace pressure, or crucible rotation speed. The degree of influence can be expressed as the ratio of the change in the value of the dependent variable to the change in the value of the explanatory variable.

[0058] The control unit 52 may generate a regression equation using all items of the lifting information and material information as explanatory variables. The control unit 52 may generate a regression equation by selecting explanatory variables from each item of the lifting information and material information. Preferably, the control unit 52 may generate a regression equation by selecting at least three explanatory variables. As a criterion for selecting explanatory variables, the control unit 52 may, for example, assign a priority to each explanatory variable based on the degree of influence of each explanatory variable obtained by performing a multiple regression analysis, and select the explanatory variables in order from those with the highest priority. The control unit 52 may assign a higher priority to explanatory variables that can be controlled as an operable variable of the lifting device 100. The control unit 52 may assign a priority to each explanatory variable based on information input from the process engineer, operator, or manager of the lifting device 100. In other words, the priority of the explanatory variables may be assigned based on the knowledge of the process engineer, operator, or manager of the lifting device 100. Furthermore, the priority of the explanatory variables may be assigned considering the past experience of the process engineer, operator, or manager of the lifting device 100. Furthermore, due to various constraints in the actual manufacturing of single-crystal silicon ingots, the range in which the values ​​of explanatory variables can change is limited. The priority of explanatory variables may be assigned considering the breadth of the range in which their values ​​can change. For example, the wider the range in which an explanatory variable's value can change, the higher its priority may be assigned.

[0059] The control unit 52 estimates the oxygen concentration of a predetermined batch included in the actual data using a regression equation generated with the selected explanatory variables. If the difference between the estimated oxygen concentration of the predetermined batch and the measured oxygen concentration of the predetermined batch is less than a threshold, the control unit 52 determines that the generated regression equation is valid and decides to use the generated regression equation as the estimation model. In other words, the control unit 52 decides to use the regression equation generated with the oxygen concentration of single-crystal silicon ingot as the target variable as the estimation model for estimating the oxygen concentration of single-crystal silicon ingot.

[0060] If the difference between the estimated oxygen concentration of a predetermined batch and the measured oxygen concentration of a predetermined batch is greater than or equal to a threshold, the control unit 52 changes at least some of the explanatory variables to other items and restarts the generation of the regression equation. The control unit 52 may change the explanatory variables based on the ranking assigned to them, or it may change the explanatory variables based on information input from the process engineer of the lifting device 100 or the like. The control unit 52 repeats changing the explanatory variables and generating the regression equation until the difference between the estimated oxygen concentration of a predetermined batch calculated using the generated regression equation and the measured oxygen concentration of a predetermined batch falls below the threshold.

[0061] The degree to which the explanatory variables of the lifting device 100 influence the oxygen concentration may differ for each furnace of the lifting device 100. Furthermore, the degree of influence may differ for each type of heat shield 22. The control unit 52 may change the order assigned to the explanatory variables for each furnace, or for each type of heat shield 22. By doing so, the accuracy of the parameters of the estimation model can be improved.

[0062] <<Summary of Estimation Model Generation>> As described above, the control unit 52 can generate an estimation model. By verifying the generated regression equation with the actual data, the estimation accuracy of the oxygen concentration by the estimation model can be improved. Further, by selecting explanatory variables based on the information input from the process engineer or the like of the hoisting device 100, the knowledge of the process engineer or the like can be reflected in the estimation model. By using the estimation model in which the knowledge is reflected, it is possible to obtain the same estimation result regardless of who operates it. That is, the personal dependence of the estimation can be reduced.

[0063] The control unit 52 may acquire one set or two or more sets of the actual data of each of the two batches of the hoisting device 100. The control unit 52 may generate difference data of the actual data of each of the two batches for at least one set of the one set or two or more sets of actual data. The control unit 52 may generate a regression equation for calculating the difference in the operation amount of the hoisting device 100 based on the at least one set of generated difference data as an estimation model. By generating a regression equation based on the difference data calculated for a plurality of combinations of two batches, the estimation accuracy can be improved.

[0064] The oxygen concentration of the single crystal silicon ingot may vary depending on the site. For example, the shoulder part I s The oxygen concentration of the straight body part I b The oxygen concentration of the tail part I t The oxygen concentrations of the shoulder part I b Among the straight body parts I s The oxygen concentration on the side close to the shoulder part I t The oxygen concentration on the side close to the tail part I b The oxygen concentration of each part in the crystal axis direction of the straight body part I s The oxygen concentration of each part in the crystal axis direction of the straight body part I b The oxygen concentration of each part in the crystal axis direction of the straight body part I s The oxygen concentration of each part in the crystal axis direction of the straight body part I b The oxygen concentration of each part of the single crystal silicon ingot can be controlled according to the operation amount when pulling up each part.

[0065] The control unit 52 controls the straight body portion I of the single crystal silicon ingot. b shoulder part I s and straight section I b The crystal may be classified into multiple sections along the crystal axis based on its distance from the boundary. The control unit 52 may generate a model for estimating the amount of manipulation required to raise the oxygen concentration in each section to a target concentration. In other words, the control unit 52 may generate an estimation model corresponding to each section. In this case, the control unit 52 may acquire actual data or differential data and measured values ​​of the oxygen concentration for each section. The estimation model corresponding to each section is also called a section estimation model.

[0066] <Estimating the amount of work for the next batch> The control unit 52 uses the determined estimation model to estimate the oxygen concentration of the single-crystal silicon ingots to be produced in the next batch of the pull-up device 100. The control unit 52 adjusts the values ​​of the explanatory variables included in the estimation model so that the estimated oxygen concentration of the single-crystal silicon ingots to be produced in the next batch becomes the target concentration. The target concentration may be, for example, the center value of the oxygen concentration specification for the item to be produced in the next batch. The control unit 52 determines the values ​​of the explanatory variables adjusted so that the estimated oxygen concentration becomes the target concentration as recommended values ​​for the operation amount of the pull-up device 100 for the next batch. For example, if the control unit 52 selects Ar gas flow rate, furnace pressure, and crucible rotation speed as explanatory variables, it may use the estimation model to determine recommended values ​​for the Ar gas flow rate, furnace pressure, and crucible rotation speed of the pull-up device 100 for the next batch.

[0067] The control unit 52 controls the straight body portion I of the single crystal silicon ingot. b The recommended amount of manipulation may be determined so that the estimated oxygen concentration in each section along the crystal axis becomes the target concentration. The amount of manipulation of the pulling device 100 may be changed while the single-crystal silicon ingot is being pulled up. The control unit 52 may adjust the amount of manipulation when each section along the crystal axis of the single-crystal silicon ingot is pulled up based on the section estimation model, and determine the estimated value of the amount of manipulation in each section.

[0068] The control unit 52 may notify the operator of the lifting device 100 of the recommended value for the determined operating amount. In this case, the operator may set the operating amount of the lifting device 100 to the recommended value. The control unit 52 may also output the recommended value for the determined operating amount to the lifting device 100 and set the recommended value as the operating amount.

[0069] <Example of a control method procedure> The control unit 52 may execute a control method including the steps of the flowchart illustrated in Figure 4 to estimate the amount of operation of the lifting device 100. The control method may be implemented as a control program to be executed by the control unit 52.

[0070] The control unit 52 performs data preprocessing (step S1). Based on the preprocessed data, the control unit 52 generates an estimation model to estimate the appropriate manipulative amount to set for the lifting device 100 (step S2). Using the estimation model, the control unit 52 calculates the manipulative amount for the lifting device 100 so that the oxygen concentration of the single-crystal silicon ingot produced by the lifting device 100 can be controlled to the target concentration (step S3). After executing the procedure in step S3, the control unit 52 may terminate the execution of the procedure in the flowchart of Figure 4.

[0071] The control unit 52 may output the manipulated amount calculated in step S3 to the lifting device 100 to set the manipulated amount in the lifting device 100 and start manufacturing the single crystal silicon ingot using the lifting device 100. The control unit 52 may notify the operator operating the lifting device 100 of the manipulated amount calculated in step S3. The operator may set the notified manipulated amount in the lifting device 100 and start manufacturing the single crystal silicon ingot using the lifting device 100.

[0072] (summary) As described above, in the manufacturing system 1 according to one embodiment of this disclosure, the control unit 52 of the control device 50 can generate an estimation model and use the estimation model to estimate the operation amount of the next batch of the pull-up device 100. In this way, the estimation of the operation amount of the pull-up device 100 can be systematized. By systematizing the estimation of the operation amount, the number of items to be considered as actual parameters that affect the oxygen concentration can be easily increased. In addition, reliance on human expertise can be reduced. By increasing the number of items to be considered or reducing reliance on human expertise, the oxygen concentration can be controlled with high precision. In addition, a reduction in variations in oxygen concentration and an improvement in process capability can be achieved. As a result, the quality of the single-crystal silicon ingots produced by the pull-up device 100 can be improved.

[0073] As a comparative example, in the silicon single crystal manufacturing method using the Czochralski method (hereinafter referred to as the CZ method), the parameters for the next batch are predicted based on past pulling results (oxygen concentration, material information, and pulling information), using established criteria and human empirical rules. In this case, individual differences may occur in parameter prediction. In addition, managing factors that affect oxygen concentration can become complicated. As a result, the variability of oxygen concentration may increase.

[0074] On the other hand, in a manufacturing system 1 according to one embodiment of this disclosure, the control unit 52 of the control device 50 can optimize the replenishment parameter values ​​for the next batch using an estimation model predicted from multiple regression analysis. Furthermore, individual differences can be eliminated by systematizing the determination of the replenishment parameter values. In addition, factors affecting oxygen concentration can be easily managed. As a result, variations in oxygen concentration can be reduced.

[0075] Here, when a single-crystal silicon ingot was manufactured by determining the operating amount of the first evaluation target apparatus using the method described in the comparative example, the oxygen concentration of the single-crystal silicon ingot manufactured by the first evaluation target apparatus was distributed as shown in the histogram in Figure 5A. The vertical axis of Figure 5A represents the oxygen concentration categories. Oi_T on the vertical axis represents the target concentration. Oi_U on the vertical axis represents the upper limit of the specification or the upper limit of control for oxygen concentration. Oi_L on the vertical axis represents the lower limit of the specification or the lower limit of control for oxygen concentration. The horizontal axis represents the frequency of each category. The process capability index (Cpk) value calculated for the oxygen concentration distribution in Figure 5A was 0.93.

[0076] On the other hand, when a single-crystal silicon ingot was manufactured by determining the operation amount of the first evaluation target apparatus using the control method according to this embodiment, the oxygen concentration of the single-crystal silicon ingot manufactured by the first evaluation target apparatus was distributed as shown in the histogram in Figure 5B. The vertical and horizontal axes of Figure 5B are the same as those of Figure 5A. The process capability index (Cpk) value calculated for the oxygen concentration distribution in Figure 5B was 0.97.

[0077] Furthermore, when single-crystal silicon ingots were manufactured by determining the operating amount of the second evaluation target apparatus using the method described in the comparative example, the oxygen concentration of the single-crystal silicon ingots manufactured by the second evaluation target apparatus was distributed as shown in the histogram in Figure 6A. The vertical and horizontal axes of Figure 6A are the same as those of Figure 5A. The process capability index (Cpk) value calculated for the oxygen concentration distribution in Figure 6A was 0.83.

[0078] On the other hand, when single-crystal silicon ingots were manufactured by determining the operation amount of the second evaluation target apparatus using the control method according to this embodiment, the oxygen concentration of the single-crystal silicon ingots manufactured by the second evaluation target apparatus was distributed as shown in the histogram in Figure 6B. The vertical and horizontal axes of Figure 6B are the same as those of Figure 5A. The process capability index (Cpk) value calculated for the oxygen concentration distribution in Figure 6B was 0.94.

[0079] As described above, when determining the amount of operation of the device under evaluation using the control method according to this embodiment, the process capability index (Cpk) of the oxygen concentration of the single-crystal silicon ingot produced by the device under evaluation may improve compared to predicting the amount of operation based on human empirical rules as described in the comparative example. In other words, according to the control method according to this embodiment, the quality of the single-crystal silicon ingot produced by the pulling device 100 can be improved.

[0080] (Other embodiments) Other embodiments are described below.

[0081] <Oxygen concentration interpolation> The oxygen concentration of a single-crystal silicon ingot can be measured at narrow intervals without cutting the ingot by using the Full Rod Spectroscopy (FRS) method. The FRS method involves irradiating a cylindrically ground single-crystal silicon ingot with infrared light from the lateral (radial) direction and measuring the average oxygen concentration in the radial direction of the ingot from its absorption intensity. The FRS method measures the oxygen concentration distribution in the growth axis direction of the ingot by scanning the infrared light incident from the lateral (radial) direction along the growth axis of the single-crystal silicon ingot and measuring the absorption intensity of the infrared light at each point along the growth axis. Furthermore, the oxygen concentration of a single-crystal silicon ingot can be measured with high accuracy for samples cut from the ingot using the Fourier Transform Infra-red Spectroscopy (FTIR) method. The oxygen concentration of a single-crystal silicon ingot is not limited to the FRS or FTIR methods exemplified above; it can be measured by various other methods.

[0082] The control unit 52 may acquire, as historical data, oxygen concentration data of single-crystal silicon ingots manufactured in the past, including data measured at narrow intervals using the FRS method and data measured at wide intervals with high precision using the FTIR method. The control unit 52 may correct the data measured by the FRS method with the data measured at high precision using the FTIR method. In other words, the control unit 52 can generate oxygen concentration data measured at narrow intervals with high precision by interpolating the oxygen concentration data measured at wide intervals with high precision using the FTIR method based on the trend of the oxygen concentration data measured at narrow intervals using the FRS method.

[0083] For example, as shown in Figure 7, the control unit 52 acquires measured oxygen concentrations at various points in a single-crystal silicon ingot, measured by the FRS method and the FTIR method. In the graph in Figure 7, the horizontal axis represents the location of the single-crystal silicon ingot in the crystal axis direction. The vertical axis represents the measured oxygen concentration. Oi_T on the vertical axis represents the target concentration. Oi_U on the vertical axis represents the upper limit of the oxygen concentration specification or the upper limit of the control. Oi_L on the vertical axis represents the lower limit of the oxygen concentration specification or the lower limit of the control. Measured oxygen concentrations using the FRS method are represented by a solid line labeled "FRS results". Measured oxygen concentrations using the FTIR method are represented by an X mark labeled "FTIR results".

[0084] The control unit 52 may maintain the trend of the oxygen concentration measurements for each part based on FRS data and align it with the oxygen concentration measurements for each part based on FTIR data. Specifically, the control unit 52 may shift the graph of oxygen concentration measurements based on FRS data based on the oxygen concentration measurements based on FTIR data. The shifted oxygen concentration is represented by a dashed line indicated as "after shift". The control unit 52 may generate actual data by associating the shifted oxygen concentration with the lifting information and material information. By doing so, the accuracy of the estimation model can be improved.

[0085] The method of measuring the oxygen concentration of a single-crystal silicon ingot using the FRS method is also called the first method. The method of measuring the oxygen concentration of a single-crystal silicon ingot using the FTIR method is also called the second method. The control unit 52 may acquire first measurement data obtained by measuring the oxygen concentration of the single-crystal silicon ingot using the first method, and second measurement data obtained by measuring the oxygen concentration of the single-crystal silicon ingot using the second method. The control unit 52 may interpolate the first measurement data with the second measurement data and acquire the interpolated data as the measured value of the oxygen concentration of the single-crystal silicon ingot. Various other measurement methods may be applied as the first and second methods.

[0086] <Method for manufacturing single-crystal silicon ingots and single-crystal silicon ingots> In the manufacturing system 1 according to this embodiment, the control device 50 controls the pulling device 100, thereby manufacturing a single-crystal silicon ingot by the pulling device 100. Therefore, a method for manufacturing a single-crystal silicon ingot is realized, which includes the step of pulling up the single-crystal silicon ingot with the pulling device 100 controlled by the control device 50 executing a control method. Furthermore, a single-crystal silicon ingot manufactured by the pulling device 100 controlled by the control device 50 executing a control method is realized.

[0087] <Example of device configuration> In manufacturing system 1, the control device 50 may be included as part of the lifting device 100. The control device 50 and the lifting device 100 may be configured separately. The data server 60 may be included as part of the control device 50 or the lifting device 100. The data server 60 and the control device 50 and the lifting device 100 may be configured separately.

[0088] While embodiments relating to this disclosure have been described based on the drawings and examples, it should be noted that those skilled in the art can make various modifications or alterations based on this disclosure. Therefore, it should be noted that these modifications or alterations are included within the scope of this disclosure. For example, the functions included in each component or step can be rearranged in a logically consistent manner, and multiple components or steps can be combined into one or divided. While embodiments relating to this disclosure have been described primarily in terms of apparatus, embodiments relating to this disclosure can also be realized as methods including steps performed by each component of the apparatus. Embodiments relating to this disclosure can also be realized as methods, programs, or storage media recording programs executed by a processor in the apparatus. These should also be understood to be included within the scope of this disclosure.

[0089] The graphs included in this disclosure are schematic. Scales and other elements may not necessarily correspond to reality. [Industrial applicability]

[0090] According to the embodiments described herein, the quality of single-crystal silicon ingots can be improved. [Explanation of symbols]

[0091] 1. Manufacturing System 50 control Device (52: control unit, 54: memory unit) 60 Data Servers 100 Lifting device (10: Main chamber, 11: Pull chamber, 12: Gate valve, 13: Gas inlet, 14: Gas outlet, 16: Crucible, 16A: Quartz crucible, 16B: Graphite crucible, 18: Shaft, 20: Shaft drive mechanism, 22: Heat shield, 22A: Shield body, 22B: Inner flange, 22C: Outer flange, 24: Heater, 26: Insulator, 28: Seed chuck, 30: Lifting wire, 32: Wire lifting mechanism, 34: Electromagnet, S: Seed crystal, M: Silicon melt, X: Lifting shaft) I. Single-crystal silicon ingot (In: neck portion, Is: shoulder portion, Ib: straight body portion, Ib1: first straight body portion, Ib2: second straight body portion, It: tail portion)

Claims

1. A method for controlling a single-crystal silicon ingot pulling device, The steps include: acquiring actual data that correlates the measured oxygen concentration of the single-crystal silicon ingot produced by the aforementioned pulling device with the amount of operation of the pulling device during production; The steps include generating an estimation model for estimating the oxygen concentration of the single-crystal silicon ingot produced by the pulling device based on the aforementioned performance data, The steps include adjusting the input variable to the estimation model so that the estimated oxygen concentration of the single-crystal silicon ingot obtained by the estimation model becomes the target concentration, The steps include determining the adjusted operating amount as the operating amount when manufacturing single-crystal silicon ingots in the next batch using the pulling device, and Includes, A method for controlling a lifting device, comprising the step of generating the estimation model, wherein at least a portion of the operating amounts of the lifting device are selected, and a regression equation is generated as the estimation model, with the degree of influence of the selected operating amounts as the coefficient.

2. A method for controlling a lifting device according to claim 1, wherein in the step of generating the estimation model, the amounts of operation of the lifting device are ranked, and the amount of operation of the lifting device is selected based on the ranking.

3. A method for controlling a single-crystal silicon ingot pulling device, The steps include: acquiring actual data that correlates the measured oxygen concentration of the single-crystal silicon ingot produced by the aforementioned pulling device with the amount of operation of the pulling device during production; The steps include generating an estimation model for estimating the oxygen concentration of the single-crystal silicon ingot produced by the pulling device based on the aforementioned performance data, The steps include adjusting the input variable to the estimation model so that the estimated oxygen concentration of the single-crystal silicon ingot obtained by the estimation model becomes the target concentration, The steps include determining the adjusted operating amount as the operating amount when manufacturing single-crystal silicon ingots in the next batch using the pulling device, and Includes, In the step of acquiring the performance data, one or more sets of performance data for each of the two batches of the lifting device are acquired. A method for controlling a lifting device, comprising the step of generating the estimation model, wherein for at least one set of actual data from the one or two or more sets of actual data, difference data for each of two batches of actual data is generated, and a regression equation is generated as the estimation model to calculate the difference in the amount of operation of the lifting device based on the difference data of at least one set.

4. A method for controlling a single-crystal silicon ingot pulling device, The steps include: acquiring actual data that correlates the measured oxygen concentration of the single-crystal silicon ingot produced by the aforementioned pulling device with the amount of operation of the pulling device during production; The steps include generating an estimation model for estimating the oxygen concentration of the single-crystal silicon ingot produced by the pulling device based on the aforementioned performance data, The steps include adjusting the input variable to the estimation model so that the estimated oxygen concentration of the single-crystal silicon ingot obtained by the estimation model becomes the target concentration, The steps include determining the adjusted operating amount as the operating amount when manufacturing single-crystal silicon ingots in the next batch using the pulling device, and Includes, A method for controlling a pulling device, wherein, in the step of acquiring the aforementioned performance data, the oxygen concentration measurement values ​​of the single-crystal silicon ingot are obtained as measurement values ​​of the oxygen concentration of the single-crystal silicon ingot, specifically for each of a plurality of sections in the crystal axis direction of the single-crystal silicon ingot.

5. The method for controlling a pulling apparatus according to claim 4, wherein in the step of generating the estimation model, a segment estimation model corresponding to each segment in the crystal axis direction of the single crystal silicon ingot is generated.

6. A method for controlling a lifting device according to claim 5, wherein in the step of adjusting the amount of manipulation, the amount of manipulation when each section of the single crystal silicon ingot is lifted is adjusted based on the section estimation model.

7. A method for controlling a single-crystal silicon ingot pulling device, The steps include: acquiring actual data that correlates the measured oxygen concentration of the single-crystal silicon ingot produced by the aforementioned pulling device with the amount of operation of the pulling device during production; The steps include generating an estimation model for estimating the oxygen concentration of the single-crystal silicon ingot produced by the pulling device based on the aforementioned performance data, The steps include adjusting the input variable to the estimation model so that the estimated oxygen concentration of the single-crystal silicon ingot obtained by the estimation model becomes the target concentration, The steps include determining the adjusted operating amount as the operating amount when manufacturing single-crystal silicon ingots in the next batch using the pulling device, and Includes, A control method for a lifting device, comprising the step of acquiring the aforementioned performance data, wherein first measurement data obtained by measuring the oxygen concentration of the single crystal silicon ingot using a first method and second measurement data obtained by measuring the oxygen concentration of the single crystal silicon ingot using a second method are acquired, and data obtained by interpolating the first measurement data with the second measurement data is acquired as the measured value of the oxygen concentration of the single crystal silicon ingot.

8. A control program that causes a processor to execute the control method for a lifting device described in any one of claims 1 to 7.

9. A control device comprising a control unit that performs the control method for a lifting device according to any one of claims 1 to 7.

10. A method for manufacturing a single crystal silicon ingot, comprising the step of manufacturing a single crystal silicon ingot with a pulling device controlled by performing a pulling device control method described in any one of claims 1 to 7.

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