Semiconductor chip manufacturing method

Abstract

The present invention pertains to a method for manufacturing a semiconductor chip, the method sequentially including steps (S1), (S2), (S3), (S3α), and (S4), and further sequentially including steps (S5) and (S6) after step (S4) (steps (S1)-(6) being defined in the description).

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a semiconductor chip. More specifically, the present invention relates to a method for manufacturing a semiconductor chip provided with a bump reinforcing film as a protective film.

Background Art

[0002] In recent years, semiconductor devices have been manufactured using a mounting method called the so-called face-down method. In the face-down method, a semiconductor chip having bumps on its circuit surface and a substrate for mounting the semiconductor chip are laminated such that the circuit surface of the semiconductor chip and the substrate face each other, thereby mounting the semiconductor chip on the substrate. The semiconductor chip is usually obtained by singulating a semiconductor wafer having bumps on its circuit surface.

[0003] In recent years, as IC-embedded products such as electronic devices are becoming smaller and thinner, there is an increasing demand for further miniaturization and thinning of electronic components such as semiconductor chips. Therefore, in the process of manufacturing electronic components from a semiconductor wafer, the semiconductor wafer is ground to a thickness of several tens to several hundreds of μm. When grinding a semiconductor wafer having protrusions such as bumps on its circuit surface as described above, particularly due to the presence of protrusions such as bumps, the risk of wafer deformation and breakage during grinding increases. Therefore, for example, a method is adopted in which a so-called back grinding sheet is attached to the surface of the wafer on which the bumps are formed (hereinafter also referred to as the "bump formation surface"), and then the surface opposite to the surface of the wafer on which the bumps are formed (hereinafter also referred to as the "wafer back surface") is ground. In addition, a method has been proposed in which a resin layer is filled between the bump formation surface and the support substrate and cured, so that the bumps and the inclined portions near the wafer edge are embedded in the cured product layer, and grinding is performed in a state where the cured product layer is provided. By adopting such a method, a method for obtaining a semiconductor wafer with high thickness accuracy and few cracks has also been adopted. As an example of the latter method, Patent Document 1 discloses a method in which a protective film, a curable resin, and a carrier are provided on a surface of a wafer having a protrusion so as to embed the protrusion, and after the curable resin has hardened, the surface of the wafer opposite to the surface having the protrusion is ground. [Prior art documents] [Patent Documents]

[0004] [Patent Document 1] Patent No. 6312343 [Overview of the project] [Problems that the invention aims to solve]

[0005] However, when using a method described in Patent Document 1, in which the bump-forming surface of a wafer is covered with a layer of curable resin (hereinafter also referred to as the "grinding cured material layer") and then the back surface of the wafer is ground, there is a concern that the bumps may be damaged by the force applied to them when the grinding cured material layer is peeled off the bump-forming surface after grinding. In addition, in Patent Document 1, the bump-forming surface of the wafer is covered with a protective film before filling the bump-forming surface with curable resin, but this protective film also ultimately needs to be peeled off from the bump-forming surface, and similarly there is a concern that the bumps may be damaged.

[0006] The present invention has been made in view of the above problems, and aims to provide a method for manufacturing a semiconductor chip that can reduce the possibility of bump damage when peeling off the hardened material layer for grinding. [Means for solving the problem]

[0007] The inventors conceived the idea that by providing a bump reinforcing film on the bottom portion of the bump before providing the aforementioned hardened grinding layer, the possibility of bump damage when peeling off the hardened grinding layer can be reduced, and thus completed the manufacturing method of the present invention.

[0008] In other words, the present invention relates to the following [1] to [7]. [1] The following steps (S1) to (S4) are included in this order: Step (S1): A step of forming a first curable resin layer (X1) on the bump-forming surface of a semiconductor wafer having a bump-forming surface with bumps on one side, so as to cover the bump-forming surface. • Process (S2): A process to cure the first curable resin layer (X1) to form a bump reinforcement film (r1) and obtain a semiconductor wafer with the bump reinforcement film (r1). Step (S3): A step of forming a second curable resin layer (X2) on the bump and bump reinforcing film (r1). • Process (S3α): A process to flatten the surface of the second curing resin layer (X2) opposite to the bump-forming surface. • Process (S4): A process to cure the second curable resin layer (X2) and form a hardened material layer (p1) for grinding. Furthermore, a method for manufacturing a semiconductor chip, comprising the following steps (S5) and (S6) in this order after step (S4). • Process (S5): A process of grinding the surface of the semiconductor wafer opposite to the bump-forming surface. • Process (S6): Process to remove the hardened material layer (p1) for grinding. [2] The method for manufacturing a semiconductor chip according to [1], wherein the first curable resin (x1) for forming the first curable resin layer (X1) is a first curable resin film (x1f). [3] The method for manufacturing a semiconductor chip according to [1] or [2], wherein the semiconductor wafer is a semiconductor chip manufacturing wafer in which grooves, which are intended to be divided lines, are formed on the bump-forming surface without reaching the surface opposite to the bump-forming surface. [4] A method for manufacturing a semiconductor chip according to any one of [1] to [3], further comprising the following step (T) after step (S5). • Process (T): A process of forming a wafer back surface protective film (r2) on the side of the semiconductor wafer opposite to the bump formation surface. [5] A method for manufacturing a semiconductor chip according to any of [2] to [4], wherein the first curable resin film (x1f) satisfies requirement (1) below. <Requirement (1)> Under conditions of a temperature of 90°C and a frequency of 1Hz, strain is induced in a test specimen of the first curable resin film (x1f) with a diameter of 25 mm and a thickness of 1 mm, and the storage modulus of the test specimen is measured. When the storage modulus of the test specimen is defined as Gc1 when the strain is 1%, and as Gc300 when the strain is 300%, the X value calculated by the following formula (i) is 19 or greater and less than 10,000. X = Gc1 / Gc300····(i) [6] A method for manufacturing a semiconductor chip according to any one of [1] to [5], wherein the bump reinforcement film (r1) is transparent or infrared transparent. [7] The following steps (S1) to (S4β) are included in this order: Step (S1): A step of forming a first curable resin layer (X1) on the bump-forming surface of a semiconductor wafer having a bump-forming surface with bumps on one side, so as to cover the bump-forming surface. • Step (S3β): A step of forming a second curable resin layer (X2) on the bump and the first curable resin layer (X1). • Process (S3α): A process to flatten the surface of the second curing resin layer (X2) opposite to the bump-forming surface. • Process (S4β): A process to cure the first curable resin layer (X1) and the second curable resin layer (X2) to form a bump reinforcement film (r1) and a grinding cured material layer (p1). Furthermore, a method for manufacturing a semiconductor chip, comprising the following steps (S5) and (S6) in this order after step (S4β). • Process (S5): A process of grinding the surface of the semiconductor wafer opposite to the bump-forming surface. • Process (S6): Process to remove the hardened material layer (p1) for grinding. [Effects of the Invention]

[0009] According to the present invention, it is possible to provide a method for manufacturing semiconductor chips that can reduce the possibility of bump damage when peeling off the hardened material layer for grinding. [Brief explanation of the drawing]

[0010] [Figure 1] It is a schematic diagram of the process for manufacturing a semiconductor chip of the present invention. [Figure 2] It is a top view showing an example of a wafer for manufacturing a semiconductor chip used in one aspect of the present invention. [Figure 3] It is a schematic cross-sectional view showing an example of a wafer for manufacturing a semiconductor chip used in one aspect of the present invention. [Figure 4] It is a schematic cross-sectional view showing an example of a wafer for manufacturing a semiconductor chip used in one aspect of the present invention. [Figure 5] It is a schematic cross-sectional view showing an example of a laminate obtained through step (S1). [Figure 6] It is a diagram showing an overview of one aspect of step (S1). [Figure 7] It is a diagram showing an overview of one aspect of step (S2). [Figure 8] It is a diagram showing an overview of one aspect of step (S3). [Figure 9] It is a schematic cross-sectional view showing an example of a laminate obtained through step (S3α) and an example of a laminate obtained through step (S4). [Figure 10] It is a schematic cross-sectional view showing an example of a laminate obtained through steps (S1) to (S4). [Figure 11] It is a diagram showing an overview of one aspect of the steps including steps (S5), (S6) and (SC) according to the first embodiment. [Figure 12] It is a diagram showing an overview of one aspect of the steps including steps (S5), (S6) and (SC) according to the second embodiment. [Figure 13] It is a schematic cross-sectional view of the first curable resin film (x1f). [Figure 14] It is a schematic cross-sectional view showing the configuration of the first composite sheet (α1).

Mode for Carrying Out the Invention

[0011] In this specification, the "bottom portion of the bump" refers to the joint portion with the bump formation surface and the vicinity thereof among the surface portions of the bump. In this specification, "active ingredient" refers to the components contained in the target composition, excluding diluting solvents such as water and organic solvents. Furthermore, in this specification, the weight-average molecular weight and number-average molecular weight are polystyrene-converted values ​​measured by gel permeation chromatography (GPC). Each step in the semiconductor chip manufacturing method of the present invention also includes embodiments in which a certain step and the next step can be performed simultaneously.

[0012] [Method for manufacturing semiconductor chips according to the present invention] Figure 1 shows a schematic diagram of the process for manufacturing the semiconductor chip of the present invention. The present invention provides a method for manufacturing a semiconductor chip, comprising the following steps (S1) to (S4) in this order: Step (S1): A step of forming a first curable resin layer (X1) on the bump-forming surface of a semiconductor wafer having a bump-forming surface with bumps on one side, so as to cover the bump-forming surface. • Process (S2): A process to cure the first curable resin layer (X1) to form a bump reinforcement film (r1) and obtain a semiconductor wafer with the bump reinforcement film (r1). Step (S3): A step of forming a second curable resin layer (X2) on the bump and bump reinforcing film (r1). • Process (S3α): A process to flatten the surface of the second curing resin layer (X2) opposite to the bump-forming surface. • Process (S4): A process to cure the second curable resin layer (X2) and form a hardened material layer (p1) for grinding. Furthermore, the following steps (S5) and (S6) are included after step (S4) in this order. • Process (S5): A process of grinding the surface of the semiconductor wafer opposite to the bump-forming surface. • Process (S6): Process to remove the hardened material layer (p1) for grinding. Furthermore, the following process (SC) may be included simultaneously with process (S5), or after process (S5) and before process (S6), or after process (S6). • Process (SC): The process of separating the semiconductor wafer into individual pieces.

[0013] By using a manufacturing method that includes the above steps, even if the manufacturing method has a step of peeling off the hardened material layer for grinding, bump damage is significantly suppressed, and a semiconductor chip is obtained in which the bump-forming surface is covered with a bump-reinforcing film (r1).

[0014] The method for manufacturing the semiconductor chip of the present invention will be described in detail below, step by step. In the following explanation, "semiconductor chip" will also be referred to simply as "chip," and "semiconductor wafer" will also be referred to simply as "wafer."

[0015] [Process (S1)] In step (S1), a first curable resin layer (X1) is formed on the bump-forming surface of a semiconductor wafer having a bump-forming surface with bumps on one side, so as to cover the bump-forming surface.

[0016] One example of a semiconductor wafer used in process (S1) is the semiconductor wafer shown as a schematic in Figures 2 and 3. A schematic top view of the semiconductor wafer is shown in Figure 2, and a schematic cross-sectional view is shown in Figure 3. The semiconductor wafer shown in Figures 2 and 3 is a semiconductor chip manufacturing wafer 10-1 (hereinafter also referred to as "semiconductor chip manufacturing wafer 10-1") in which a bump-forming surface 11a having bumps 12 on one side is formed on the bump-forming surface 11a of the semiconductor wafer 11, and grooves 13 as division lines are formed on the back surface 11b of the wafer without reaching it. Note that the bumps are omitted from the illustration in Figure 2. Also, the figures used in the following explanation may be enlarged for convenience in order to make the features of the present invention easier to understand, and the dimensional ratios of each component may not be the same as in reality. The semiconductor chip manufacturing wafer 10-1 can be suitably used in a so-called pre-dicing process.

[0017] As shown in Figures 2 and 3, the bump-forming surface 11a of the semiconductor chip manufacturing wafer 10-1 has a grid of grooves 13 formed on it as planned division lines when the semiconductor chip manufacturing wafer 10-1 is divided into individual pieces. The grooves 13 are notches formed when a pre-dicing process is applied, and are formed to a depth shallower than the thickness of the wafer 11, so that the deepest part of the grooves 13 does not reach the back surface 11b of the wafer 11. The grooves 13 can be formed, for example, by dicing using a conventionally known wafer dicing apparatus equipped with a dicing blade or a laser dicing apparatus. Furthermore, the multiple grooves 13 can be formed in such a way that the semiconductor chip to be manufactured has the desired size and shape, and it is not necessary to form the grooves 13 in a grid pattern as shown in Figure 2. Also, the size of the semiconductor chip is usually around 0.5 mm × 0.5 mm to 10 mm × 10 mm, but it is not limited to this size.

[0018] The width of the groove 13 is preferably 10 μm to 2,000 μm, more preferably 30 μm to 1,000 μm, even more preferably 40 μm to 500 μm, and even more preferably 50 μm to 300 μm, from the viewpoint of improving the embedding ability of the first curable resin (x1) for forming the first curable resin layer (X1). The depth of the groove 13 is adjusted according to the thickness of the wafer used and the required chip thickness, preferably 30 μm to 700 μm, more preferably 60 μm to 600 μm, and even more preferably 100 μm to 500 μm. The aspect ratio of the groove 13 may be 2 to 6, 2.5 to 5, or 3 to 5.

[0019] Furthermore, one embodiment of the semiconductor wafer used in process (S1) is, for example, a semiconductor wafer 11 having a bump-forming surface 11a with bumps 12 on one side, as shown as a schematic cross-sectional view in Figure 4, which is a semiconductor chip manufacturing wafer 10-2 (hereinafter also referred to as "semiconductor chip manufacturing wafer 10-2"). The semiconductor chip manufacturing wafer 10-2 differs from the semiconductor wafer 10-1 in that it does not have grooves 13.

[0020] In any of the semiconductor wafers described above, the shape of the bump 12 is not particularly limited and can be any shape as long as it can be in contact with and fixed to electrodes or the like on a substrate for chip mounting. For example, in the figures of this specification, the bump 12 is depicted as spherical, but the bump 12 may also be a spheroid.

[0021] The height of bump 12 is not particularly limited and can be changed as appropriate according to design requirements. For example, the particle size is 30 μm to 300 μm, preferably 60 μm to 250 μm, and more preferably 80 μm to 200 μm. Furthermore, "the height of the bump 12" refers to the height of the highest point of a single bump, relative to the bump-forming surface 11a. The number of bumps 12 is not particularly limited and can be changed as appropriate according to design requirements.

[0022] Wafer 11 is a semiconductor wafer on which circuits such as wiring, capacitors, diodes, and transistors are formed on its surface. The material of the wafer is not particularly limited and includes, for example, silicon wafers, silicon carbide wafers, compound semiconductor wafers, glass wafers, and sapphire wafers.

[0023] The size of the wafer 11 is not particularly limited, but examples include circular wafers with a diameter of 8 inches (200 mm) or 12 inches (300 mm), and can be appropriately selected according to the equipment and manufacturing method used in each process. The thickness of the wafer 11 is not particularly limited, but from the viewpoint of making it easier to suppress warping due to shrinkage when curing the first curable resin layer (X1), and from the viewpoint of reducing the amount of grinding on the back surface 11b of the wafer 11 in a later process and shortening the time required for back surface grinding, it is preferably 100 μm to 1,000 μm, more preferably 200 μm to 900 μm, and even more preferably 300 μm to 800 μm.

[0024] As described later, the bump reinforcement film (r1) remains on the bump-forming surface 11a even after the semiconductor wafer 11 has been separated into semiconductor chips, and plays a role in protecting the semiconductor wafer 11 and the bottom portion of the bumps 12. Here, if the semiconductor chip manufacturing wafer 10-1 is used and the bump reinforcement film (r1) is also formed inside the groove portion 13 of the semiconductor chip manufacturing wafer 10-1, the portion that will become the side surface of the semiconductor chip will also be covered with the bump reinforcement film (r1), making it possible to protect the side surface of the semiconductor chip as well. For this reason, the semiconductor chip manufacturing wafer 10-1 is preferred as the semiconductor wafer used in process (S1). In the following explanation of each process, we will primarily use the case where semiconductor chip manufacturing wafer 10-1 is used as an example.

[0025] Figure 5 is a schematic cross-sectional view showing an example of a laminate in which a first curable resin layer (X1) is formed on the bump-forming surface 11a of a semiconductor chip manufacturing wafer 10-1 obtained through process (S1). In the laminate shown in Figure 5, the first curable resin layer (X1) is filled into the interior of the groove 13 and is formed to cover the bump-forming surface 11a. In the laminate obtained in process (S1), when using a semiconductor chip manufacturing wafer 10-1, it is preferable that the first curable resin layer (X1) is formed to at least a portion of the interior of the groove portion 13, as shown in Figure 5. After the first curable resin layer (X1) is cured, the portion that will become the side surface of the semiconductor chip is also covered with the bump reinforcement film (r1), protecting the side surface of the semiconductor chip and making it possible to obtain a semiconductor chip with superior strength. Moreover, peeling of the bump reinforcement film (r1) as a protective film is also suppressed. Furthermore, since the first curable resin layer (X1) is formed to at least a portion of the interior of the groove 13, the second curable resin (x2), described later, is prevented from penetrating the groove 13, which is preferable from the viewpoint of making it easier to peel off the grinding cured material layer (p1) in step (S6) and preventing fragments of the grinding cured material layer (p1) from remaining inside the groove 13.

[0026] There are no particular limitations on the method for forming the first curable resin layer (X1) on the bump-forming surface. It may be a method of coating the first curable resin (x1) for forming the first curable resin layer (X1) using various known coaters. Alternatively, it may be a method of coating, for example, by a dip coating method. Alternatively, the first curable resin layer (X1) may be formed using the first curable resin (x1) as a first curable resin film (x1f). From the viewpoint of improving workability, it is preferable to use the first curable resin (x1) as a first curable resin film (x1f).

[0027] Furthermore, as a preferred embodiment of the above step (S1), a schematic diagram of a case in which the first curable resin layer (X1) is formed on the bump-forming surface 11a of the semiconductor chip manufacturing wafer 10-1 using a first composite sheet (α1) having a laminated structure in which a first support sheet (Y1) and a first curable resin layer (X1) are laminated is shown and explained in Figure 6. In one embodiment of the process (S1) shown in Figure 6, a first composite sheet (α1) having a laminated structure in which a first support sheet (Y1) and a first curable resin layer (X1) are laminated is attached to the bump-forming surface 11a of a semiconductor chip manufacturing wafer 10-1 by pressing the layer (X1) with the X1 as the adhesive surface. In this embodiment, the first curable resin (x1) is in film form and is used as a first curable resin film (x1f), however, in the following description of the first composite sheet (α1), the first curable resin film (x1f) may also be described as "first curable resin (x1)". As a result, as shown in Figure 6, the bump-forming surface 11a of the semiconductor chip manufacturing wafer 10-1 can be covered with a first-curable resin layer (X1). Furthermore, as shown in Figure 6, when the semiconductor wafer 11 is the semiconductor chip manufacturing wafer 10-1, it is preferable that the bump-forming surface 11a is covered with the first-curable resin layer (X1), and that the first-curable resin (x1) penetrates to at least a portion of the interior of the grooves 13 formed in the semiconductor chip manufacturing wafer 10-1 to form the first-curable resin layer (X1). Moreover, it is even more preferable that the first-curable resin (x1) is embedded to the bottom of the grooves 13 formed in the semiconductor chip manufacturing wafer 10-1 to form the first-curable resin layer (X1). By using the first composite sheet (α1) and applying it by pressing, the first curable resin (x1) can be easily penetrated into at least a portion of the inside of the groove 13, and it is also preferable to use the first composite sheet (α1) from the viewpoint of ease of handling. In addition to the embodiment using the first composite sheet (α1), the groove 13 can also be filled using a liquid curable resin as the first curable resin (x1) in order to allow the first curable resin (x1) to penetrate at least a portion of the interior of the groove 13.

[0028] By embedding the first curable resin (x1) into at least a portion of the grooves 13 formed in the semiconductor chip manufacturing wafer 10-1, it becomes possible to cover at least a portion of the side surface of the semiconductor chip with the bump reinforcement film (r1) as a protective film when the semiconductor chip manufacturing wafer 10-1 is separated into individual pieces in process (SC). This prevents the bump reinforcement film (r1) from peeling off from the bump-forming surface 11a, starting from the interface between the bump-forming surface 11a and the bump reinforcement film (r1) near the edge. Furthermore, in process (S5), which includes the process (SC) described later, by grinding the back surface 11b of the semiconductor chip manufacturing wafer 10-1 up to the portion covered by the bump reinforcement film (r1) inside the grooves 13 to separate it into individual pieces, it becomes possible to cover the entire side surface of the semiconductor chip with the bump reinforcement film (r1).

[0029] Furthermore, when using the first composite sheet (α1), the pressing force when attaching the first composite sheet (α1) to the semiconductor wafer is preferably 1kPa to 200kPa, more preferably 5kPa to 150kPa, and even more preferably 10kPa to 100kPa. Pressing within this pressure range is preferable, for example, when using a semiconductor chip manufacturing wafer 10-1, from the viewpoint of ensuring good embedding of the first curable resin (x1) into the grooves 13. Furthermore, the pressing force applied when attaching the first composite sheet (α1) to the semiconductor wafer may be appropriately varied from the initial stage to the final stage of attachment. For example, when using a semiconductor chip manufacturing wafer 10-1, it is preferable to lower the pressing force at the initial stage of attachment and gradually increase it, from the viewpoint of improving the embedding of the first curable resin (x1) into the grooves 13.

[0030] Furthermore, when using the first composite sheet (α1), it is preferable to heat the first curable resin (x1) from the viewpoint of improving the filling of the bottom portion of the bump 12 and the groove portion 13 when using the semiconductor chip fabrication wafer 10-1. When the first curable resin (x1) is a thermosetting resin, heating the first curable resin (x1) temporarily increases its fluidity, and continued heating causes it to harden. Therefore, heating is performed within a range that improves the fluidity of the first curable resin (x1). By heating the first curable resin (x1), the first curable resin (x1) can spread more easily to the bottom portion of the bump 12, and the reinforcing ability of the first curable resin (x1) to the bottom portion of the bump 12 can be further improved. The specific heating temperature (application temperature) is preferably 50°C to 150°C, more preferably 60°C to 130°C, and even more preferably 70°C to 110°C. Note that the heat treatment performed on the first curable resin (x1) is not included in the curing treatment of the first curable resin (x1).

[0031] Furthermore, it is preferable to attach the first composite sheet (α1) to the wafer 11 under reduced pressure. This allows the groove 13 to be under negative pressure, for example, when using a semiconductor chip manufacturing wafer 10-1, making it easier for the first curable resin (x1) to spread throughout the groove 13. As a result, the embedding of the first curable resin (x1) into the groove 13 becomes better. From a similar viewpoint, it is also considered that the embedding of the first curable resin (x1) into the bottom portion of the bump 12 will be improved. The specific pressure of the reduced-pressure environment is preferably 0.001 kPa to 50 kPa, more preferably 0.01 kPa to 5 kPa, and even more preferably 0.05 kPa to 1 kPa.

[0032] Furthermore, the thickness of the first curable resin layer (X1) is preferably 10 μm or more, more preferably 20 μm or more, even more preferably 30 μm or more, and even more preferably more than 30 μm, from the viewpoint of further improving the embedding ability of the first curable resin (x1) into the groove portion 13. Also, it is preferably 200 μm or less, more preferably 150 μm or less, even more preferably 130 μm or less, even more preferably 100 μm or less, and even more preferably 80 μm or less. Here, "thickness of the first curable resin layer (X1)" refers to the total thickness of the layer (X1). For example, the thickness of a layer (X1) consisting of multiple layers refers to the total thickness of all the layers that make up the layer (X1). Details of the first curable resin (x1) used in process (S1) will be described in detail after each process is explained. Similarly, details of the first composite sheet (α1) will also be described later.

[0033] [Process (S2)] In step (S2), the first curable resin layer (X1) is cured to form a bump reinforcement film (r1), and a semiconductor wafer with the bump reinforcement film (r1) is obtained. As a preferred embodiment of step (S2), Figure 7 shows a schematic of a case in which a first curable resin layer (X1) is formed on the bump-forming surface 11a of a semiconductor chip manufacturing wafer 10-1 using a first composite sheet (α1), and then the first curable resin layer (X1) is cured to obtain a semiconductor wafer with a bump-reinforcement film (r1). As shown in Figure 7, the first curable resin layer (X1) is cured to obtain a semiconductor chip manufacturing wafer 10-1 with a bump-reinforcement film (r1). By curing the first curable resin layer (X1), the bump 12 and the bump-forming surface 11a are well protected. Unlike the hardened material layer for grinding (p1) described later, the bump reinforcement film (r1) is not peeled off after the grinding process in step (S5), and is incorporated into the semiconductor chip as a protective film for the bump formation surface.

[0034] The first curable resin layer (X1) can be cured by either thermal curing or curing by energy ray irradiation, depending on the type of curable component contained in the first curable resin (x1). In this specification, "energy beam" means an electromagnetic wave or charged particle beam that has an energy quantum. Examples of energy beams include ultraviolet rays, radiation, and electron beams. Ultraviolet rays can be irradiated, for example, by using high-pressure mercury lamps, fusion lamps, xenon lamps, black lights, or LED lamps as ultraviolet light sources. Electron beams can be irradiated using those generated by electron accelerators, etc.

[0035] When performing thermal curing, the curing temperature is preferably 100 to 200°C, more preferably 110 to 170°C, and even more preferably 120 to 150°C. The heating time during thermal curing is preferably 0.5 to 5 hours, more preferably 0.5 to 4 hours, and even more preferably 1 to 3 hours. The conditions for curing by energy ray irradiation are set appropriately depending on the type of energy ray used. For example, when using ultraviolet light, the illuminance is preferably 180-280 mW / cm². 2The light intensity is preferably 450 to 1,000 mJ / cm². 2 That is the case. Here, when using a semiconductor chip manufacturing wafer 10-1, in the process of curing the first curable resin layer (X1) to form a bump reinforcement film (r1), it is preferable that the first curable resin (x1) is a thermosetting resin that tends to become more fluid when heated, from the viewpoint of removing air bubbles and the like that may get trapped when filling the grooves 13 with the first curable resin (x1) in step (S1). On the other hand, from the viewpoint of shortening the curing time, it is preferable that the first curable resin (x1) is an energy ray curable resin.

[0036] Furthermore, the thickness of the bump reinforcement film (r1) is preferably 10 μm or more, more preferably 20 μm or more, even more preferably 30 μm or more, and even more preferably more than 30 μm. Also, it is preferably 200 μm or less, more preferably 150 μm or less, even more preferably 130 μm or less, even more preferably 100 μm or less, and even more preferably 80 μm or less.

[0037] Furthermore, from the viewpoint of making it easier to see the bottom position and condition of the bumps covered with the bump reinforcement film (r1), and from the viewpoint of making it easier to see the planned division lines when the semiconductor wafer is sliced ​​into individual pieces, it is preferable that the bump reinforcement film (r1) is transparent or infrared transparent.

[0038] As shown in one embodiment in Figure 7, when using the first composite sheet (α1), the support sheet (Y1) of the first composite sheet (α1) may be peeled off after curing the first curable resin layer (X1) to form the bump reinforcement film (r1), or it may be peeled off before curing the first curable resin layer (X1). From the viewpoint of making the surface of the cured bump reinforcement film (r1) smooth, it is preferable to peel off the support sheet (Y1) after forming the bump reinforcement film (r1).

[0039] <Process (S2α)> In one embodiment of the semiconductor chip manufacturing method of the present invention, the following step (S2α) may be included between step (S2) and step (S3) described later. • Step (S2α): A step of forming an intermediate protective layer (p2) on the bump and bump reinforcement film (r1). When an intermediate protective layer (p2) is formed by process (S2α), the grinding hardened material layer (p2) formed through processes (S3) and (S4) is formed on the intermediate protective layer (p2). The intermediate protective layer (p2) is mainly provided to facilitate the removal of the grinding hardened material layer (p1) from the bumps and bump reinforcement film (r1) in process (S6) after grinding the back surface of the wafer in process (S5). The intermediate protective layer (p2) is also removed from the bumps and bump reinforcement film (r1) at the same time as or after process (S6). Furthermore, it is preferable that the intermediate protective layer (p2), together with the grinding hardened material layer (p1), works to reduce the risk of damage to the bumps and the wafer during the wafer grinding process in step (S5).

[0040] Furthermore, there are no particular restrictions on the thickness of the intermediate protective layer (p2), but it is preferably 5 to 200 μm, more preferably 5 to 100 μm, and even more preferably 8 to 80 μm.

[0041] Furthermore, in one embodiment of the semiconductor chip manufacturing method of the present invention, for example, when using a first composite sheet (α1) having a laminated structure in which the first support sheet (Y1) and the first curable resin layer (X1) described above are laminated, the first support sheet (Y1) may be used as an intermediate protective layer film (p2f) to form the intermediate protective layer (p2) without peeling off the first support sheet (Y1) before performing step (S3).

[0042] [Process (S3)] In step (S3), a second curable resin layer (X2) is formed on the bump and bump reinforcing film (r1) either directly or via another layer such as an intermediate protective layer (p2). A preferred embodiment of process (S3) will be explained in detail in Figure 8, when the semiconductor chip manufacturing wafer 10-1 is used as the semiconductor wafer. In one embodiment of the process (S3) shown in Figure 8, after the process (S2), a bump reinforcement film (r1) is formed on the bump-forming surface 11a of the semiconductor chip manufacturing wafer 10-1, and a second curable resin layer (X2) is further formed on the bumps 12 and the bump reinforcement film (r1).

[0043] There are no particular limitations on the method for forming the second curable resin layer (X2) on the bumps and bump reinforcement film (r1). The second curable resin (x2) for forming the second curable resin layer (X2) can be supplied onto the bumps 12 and bump reinforcement film (r1) using a dispenser or the like. Alternatively, a coating method using various known coaters may be used. Alternatively, as will be described later, a method may be used in which a second curable resin (x2) is applied to a support substrate to pre-prepare a second curable resin film (x2f) in the form of a film, and the second curable resin film (x2f) is then attached to the bump 12 and the bump reinforcing film (r1) to form the structure. Details regarding the second curable resin (x2) used to form the grinding hardened layer (p1) will be described later.

[0044] [Process (S3α)] In step (S3α), the surface of the second curable resin layer (X2) opposite to the bump-forming surface is flattened. Examples of flattening methods include laminating a support substrate (Y2) on the second curable resin layer (X2); or using a roller or the like to flatten the surface of the second curable resin layer (X2); with the method of laminating a support substrate (Y2) on the second curable resin layer (X2) being preferred. A preferred embodiment of step (S3α) is, for example, as shown in the schematic cross-sectional view in Figure 9(a), the surface of the second curable resin layer (X2) (the surface opposite to the bump-reinforcement film (r1)) becomes smooth, and the surface of the grinding cured material layer (p1) obtained by curing the second curable resin layer (X2) in the later step (S4) can be smoothed. A smooth surface of the grinding cured layer (p1) is preferable in the process (S5) because it allows for more uniform distribution of pressure on the wafer when grinding the back surface of the wafer, thereby reducing the risk of wafer breakage and making it easier to obtain a wafer of more uniform thickness. From this viewpoint, it is more preferable that the surface of the second curable resin layer (X2) is formed to be parallel to the back surface of the wafer. The support substrate (Y2) may be a resin film such as polyethylene terephthalate film, or a rigid substrate made of a material such as silicon, glass, or stainless steel.

[0045] In one embodiment of the semiconductor chip manufacturing method of the present invention, step (S3α) may be performed after step (S3) and before step (S4), or it may be performed simultaneously with step (S3). When process (S3α) is performed simultaneously with process (S3), for example, a method can be used in which a second composite sheet (α2) having a laminated structure in which a support substrate (Y2) and a second curable resin layer (X2) are laminated is applied by pressing the layer (X2) with the layer (X2) as the adhesive surface. Further details about the second composite sheet (α2) will be provided later. Alternatively, the following method described in Patent Document 1 mentioned above may also be used. That is, a flexible second curable resin (x2) is provided on a support substrate (Y2), and the flexible second curable resin (x2) is placed facing the bump-forming surface of the wafer, so that the bumps and the surfaces of the bump-reinforcing film (r1) opposite to the bump-forming surface come into contact with the flexible second curable resin (x2). This method is used so that the bumps exposed on the surface of the bump-reinforcing film (r1) opposite to the bump-forming surface are embedded in the flexible second curable resin (x2).

[0046] Furthermore, the thickness of the second curable resin layer (X2) is preferably 50 μm or more, more preferably 100 μm or more, and even more preferably 200 μm or more. It is also preferably 1,000 μm or less, and more preferably 800 μm or less.

[0047] [Process (S4)] In step (S4), the second curable resin layer (X2) is cured to form a cured material layer (p1) for grinding. Figure 9 shows a schematic of a preferred embodiment of step (S4) when using a semiconductor chip wafer 10-1. Figure 9(a) shows a schematic cross-sectional view of a laminate obtained by further laminating a support substrate (Y2) on a second curable resin layer (X2) after or simultaneously with step (S3) via step (S3α). In step (S4), the second curable resin layer (X2) in the laminate can be cured to form a cured material layer (p1) for grinding. As shown in Figure 9(b), the grinding hardened layer (p1) is formed to cover the bumps 12 and the bump reinforcement film (r1). The grinding hardened layer (p1) is used in a later step (S5) to reduce the risk of damage to the bumps and the semiconductor wafer when grinding the back surface of the wafer. It also makes it easier to obtain semiconductor wafers with higher thickness accuracy during the grinding process. Unlike the bump reinforcement film (r1), the grinding hardened layer (p1) is peeled off in step (S6) after the grinding process in step (S5). In other words, the grinding hardened layer (p1) is a peelable layer.

[0048] The curing of the second curable resin layer (X2) can be performed using, for example, thermal curing or energy ray curing, depending on the type of curable component contained in the second curable resin (x2), and both thermal curing and energy ray curing may be performed. Furthermore, from the viewpoint of shortening the curing time, it is preferable that the second curable resin (x2) is an energy ray curable resin.

[0049] Furthermore, the thickness of the hardened material layer for grinding (p1) is preferably 50 μm or more, more preferably 100 μm or more, and even more preferably 200 μm or more. It is also preferably 1,000 μm or less, and more preferably 800 μm or less. Furthermore, for the reasons mentioned above, it is preferable that the surface of the grinding hardened layer (p1) formed in process (S4) (the surface opposite to the bump reinforcement film (r1)) be smooth, and from the same viewpoint, it is even more preferable that the surface of the grinding hardened layer (p1) be formed parallel to the back surface of the wafer.

[0050] <Process (W)> One embodiment of the semiconductor chip manufacturing method of the present invention may further include the following step (W). • Process (W): A process of forming a modified region within the semiconductor wafer along the planned division line. The modified region can be formed by irradiating the inside of the semiconductor wafer with a laser or plasma focused on it. The laser or plasma irradiation may be performed from the bump-forming side of the semiconductor wafer, or from the side opposite to the bump-forming side. It is preferable that process (W) is performed before process (S5), which will be described later, and it is preferable that it be performed after process (S4) in order to reduce the number of operations involving handling the semiconductor wafer on which the modified region is provided. If a modified region is also provided on the wafer back surface protective film (r2), which will be described later, process (W) may be performed after process (S5).

[0051] [Step (S5), Step (S6), and Step (SC)] By the steps up to (S4) described above, a bump-reinforcement film (r1) covering the bump-forming surface is formed on the bump-forming surface of the semiconductor wafer, and a grinding-hardened material layer (p1) is further formed on the bump-reinforcement film (r1), thereby forming a laminate. One embodiment of this laminate is shown in Figure 10(a). As mentioned above, if necessary, an intermediate protective layer (p2) may be further formed between the bump-reinforcement film (r1) and the grinding-hardened material layer (p1) of the laminate via step (S2α). One embodiment of this laminate is shown in Figure 10(b). The first and second embodiments described below are embodiments that include process (S5), process (S6), and process (SC) which are optionally adopted in the manufacturing method of the semiconductor chip of the present invention, and the laminate can be subjected to any of these processes. The first and second embodiments will be described below.

[0052] <First Embodiment> In the first embodiment, as shown in Figure 1, the following step (SC) is performed in the following step (S5). • Process (S5): A process of grinding the surface of the semiconductor wafer opposite to the bump-forming surface. • Process (SC): The process of separating the semiconductor wafer into individual pieces. As one aspect of the first embodiment, Figure 11 shows a schematic of the first embodiment in which a laminate obtained using the semiconductor chip manufacturing wafer 10-1 shown in Figure 10(a) is used, and the following steps will be explained based on this schematic diagram.

[0053] (First embodiment: Process (S5) including process (SC)) In the first embodiment, first, a process (S5) including process (SC) is carried out. In the first embodiment, it is preferable to use the semiconductor chip manufacturing wafer 10-1. Specifically, as shown in Figures 11(1-a) and (1-b), the back surface 11b of the semiconductor chip manufacturing wafer 10-1 is ground with the grinding hardened material layer (p1) attached. In Figure 11, "BG" stands for back grind, and the same applies in subsequent drawings. As shown in Figure 11(1-b), the semiconductor chip manufacturing wafer 10-1 is broken down into individual pieces by grinding until the bottom of the groove 13 of the semiconductor chip manufacturing wafer 10-1 is exposed. In other words, process (SC) is performed in process (S5).

[0054] Furthermore, when using the semiconductor chip manufacturing wafer 10-1, it is preferable that the bump reinforcement film (r1) penetrates and forms into at least a portion of the interior of the groove portion 13 after going through steps (S1) and (S2), and that in step (S5), the grinding surface reaches the bottom of the groove portion 13, so that step (SC) is performed simultaneously. In addition, in this embodiment, it is even more preferable to perform further grinding so that the bump reinforcement film (r1) embedded in the groove portion 13 reaches together with the semiconductor chip manufacturing wafer 10-1.

[0055] This makes it possible to obtain a semiconductor chip 40 in which at least the bump-forming surface 11a and at least a portion of the side surface are covered with a bump-reinforcement film (r1). The semiconductor chip 40 has excellent strength because at least a portion of the bump-forming surface 11a and the side surface is covered with a bump-reinforcement film (r1). Furthermore, a semiconductor chip 40 can be obtained in which peeling of the bump-reinforcement film (r1), which acts as a protective film, is suppressed.

[0056] Furthermore, in the first embodiment, a semiconductor wafer provided with a modification region may be used. In this case, the amount of grinding when grinding the back surface of the semiconductor chip manufacturing wafer is reduced until the wafer is cleaved and fragmented due to the modification region. As a result, steps (S5) and (SC) are performed simultaneously.

[0057] In the first embodiment, the thickness of the semiconductor wafer after grinding in step (S5) is preferably 150 μm or less, more preferably 100 μm or less, and even more preferably 75 μm or less. It is also preferably 10 μm or more, more preferably 20 μm or more, and even more preferably 30 μm or more.

[0058] (First embodiment: Process (S6)) In the first embodiment, as shown in Figure 11(1-c), after performing step (S5) which includes step (SC), the following step (S6) is performed. • Process (S6): Process to remove the hardened material layer (p1) for grinding. In step (S6), the grinding hardened material layer (p1) is peeled off from the bumps and bump reinforcement film (r1), or other layers such as an intermediate protective layer (p2) provided as needed.

[0059] One method for removing the hardened material layer (p1) for grinding is to apply an external stimulus to the hardened material layer (p1) to soften it to a degree that allows for removal, and then remove it. For example, if a curing resin such as TEMPLOC (manufactured by Denka Co., Ltd.), which will be described later, is used as the resin for forming the hardened layer (p1) for grinding, the resin may be softened after hardening and the peeling process may be performed by adding hot water above a certain temperature or by immersing it in hot water.

[0060] Furthermore, as mentioned above, if an intermediate protective layer (p2) is provided to facilitate the removal of the hardened material layer (p1) for grinding, the hardened material layer (p1) for grinding may be removed at the same time as the intermediate protective layer (p2). Furthermore, when forming the grinding hardened material layer (p1), if the second composite sheet (α2) is used and step (S5) is performed without peeling off the support substrate (Y2), the support substrate (Y2) and the grinding hardened material layer (p1) may be peeled off simultaneously, or the support substrate (Y2) may be peeled off first, and then the grinding hardened material layer (p1) may be peeled off as described above.

[0061] <Second Embodiment> In the second embodiment, as shown in Figure 1, step (SC) is performed after step (S6). As one aspect of the second embodiment, Figure 12 shows a schematic of the second embodiment in which a laminate obtained through steps (S1) to (S4) is used, using the semiconductor chip manufacturing wafer 10-2 shown in Figure 4 as the semiconductor wafer. Based on this schematic diagram, the following steps will be explained.

[0062] (Second embodiment: Process (S5)) In the second embodiment, first, the following step (S5) is performed. • Process (S5): A process of grinding the surface of the semiconductor wafer opposite to the bump-forming surface. In the second embodiment, it is preferable to use the semiconductor chip manufacturing wafer 10-2. Specifically, as shown in Figures 12(2-a) and (2-b), the back surface 11b of the semiconductor chip manufacturing wafer 10-2 is ground with the grinding hardened material layer (p1) attached. In step (S5) of the second embodiment, the thickness of the semiconductor chip manufacturing wafer 10-2 after grinding is preferably 150 μm or less, more preferably 100 μm or less, and even more preferably 75 μm or less. Also, it is preferably 10 μm or more, more preferably 20 μm or more, and even more preferably 30 μm or more.

[0063] (Second embodiment: Process (S6)) In the second embodiment, as shown in Figure 12(2-c), after performing step (S5), the following step (S6) is performed. • Process (S6): Process to remove the hardened material layer (p1) for grinding. The details of step (S6) are the same as those of step (S6) described in the first embodiment, so their explanation is omitted here.

[0064] (Second embodiment: Process (SC)) In the second embodiment, after performing step (S6), the following step (SC) is performed. • Process (SC): The process of separating the semiconductor wafer into individual pieces. As shown in Figure 12(2-d), the semiconductor chip manufacturing wafer 10-2 can be divided into individual pieces by suitably employing conventionally known cutting methods such as blade dicing or laser dicing.

[0065] Furthermore, in one embodiment of the semiconductor chip manufacturing method of the present invention, including the second embodiment, it is preferable to divide the bump reinforcement film (r1) by performing step (SD), described later, simultaneously with step (SC), as shown in Figure 12(2-d). As will be described later, the timing of step (SD) is not limited to the timing shown in Figure 12.

[0066] [Process (SD)] In one embodiment of the semiconductor chip manufacturing method of the present invention, it is preferable to further include the following step (SD) before step (SC), simultaneously with step (SC), or after step (SC). • Process (SD): A process for dividing the bump reinforcement film (r1). In process (SD), the bump reinforcement film (r1) is usually separated along the planned division line. For example, Figure 11(1-f) shows a schematic of one embodiment in which process (SD) is performed after going through the first embodiment using a semiconductor chip manufacturing wafer 10-1. As shown in Figure 11(1-c), after going through the first embodiment described above, the semiconductor wafer is fragmented and a semiconductor chip 40 is obtained, but the bump reinforcement film (r1) portion may not be separated. In that case, it is preferable to separate the bump reinforcement film (r1) present in the groove portion 13 along the planned division line.

[0067] The bump reinforcement film (r1) can be divided into individual pieces by cutting it using conventionally known methods such as blade dicing, laser dicing, or plasma dicing.

[0068] On the other hand, in the case of a manufacturing method including the embodiment shown in Figure 11, for example, even when using a semiconductor chip manufacturing wafer 10-1, the bump reinforcement film (r1) is not divided even after the semiconductor wafer is separated into individual pieces in step (SC). Therefore, even if the grinding hardened layer (p1) is peeled off, each semiconductor chip 40 obtained by separating into individual pieces is held by the bump reinforcement film (r1), which is preferable because it reduces the likelihood of workability issues and misalignment of each semiconductor chip when they are subjected to the next step. Furthermore, in the case of a manufacturing method including the second embodiment described above, it is common to perform process (SD) simultaneously with process (SC) for fractionating the semiconductor wafer, but they may be performed separately.

[0069] [Process (T)] In one embodiment of the semiconductor chip manufacturing method of the present invention, it is preferable to further include the following step (T) after step (S5). • Process (T): A process of forming a wafer back surface protective film (r2) on the side of the semiconductor wafer opposite to the bump formation surface.

[0070] According to the semiconductor chip manufacturing method of the present invention having any of the embodiments described above, a semiconductor chip with a bump reinforcement film (r1) can be obtained in which at least the bump-forming surface 11a is covered with the bump reinforcement film (r1). Furthermore, according to one embodiment of the semiconductor chip manufacturing method of the present invention described above, a semiconductor chip with a bump reinforcement film (r1) can be obtained in which the bump-forming surface 11a and the side surface are covered with the bump reinforcement film (r1). Here, it is preferable to perform the above step (T) in order to further protect the back surface of the semiconductor chip with the bump reinforcement film (r1) and to further improve the strength of the semiconductor chip.

[0071] More specifically, the above process (T) preferably includes the following processes (T1) and (T2) in this order. • Process (T1): A process of forming a third curable resin layer (X3) on the side of the semiconductor wafer opposite to the bump-forming surface. • Process (T2): A process to cure the third curable resin layer (X3) and form a wafer back surface protective film (r2).

[0072] Furthermore, in step (T1), it is preferable to use a third composite sheet (α3) having a laminated structure in which a third support sheet (Y3) and a third curable resin layer (X3) are laminated. More specifically, it is preferable that step (T1) is a step of attaching a third composite sheet (α3) having a laminated structure in which a third support sheet (Y3) and a third curable resin layer (X3) are laminated to the back surface of a semiconductor wafer, with the layer (X3) being the adhesive surface. In this case, the timing of peeling the third support sheet (Y3) from the third composite sheet (α3) may be between process (T1) and process (T2), or it may be after process (T2).

[0073] In this case, when a third composite sheet (α3) is used in process (T1), it is preferable that the third support sheet (Y3) of the third composite sheet (α3) not only supports the third curable resin (x3) but also functions as a fixing sheet for the semiconductor wafer. In process (SC) or process (SD), the third composite sheet (α3) is attached to the back surface of the semiconductor wafer with the bump reinforcement film (r1). This allows the semiconductor wafer to be fixed by the third support sheet (Y3) when the semiconductor wafer is pulverized or the bump reinforcement film (r1) is divided, making it easier to pulverize or divide the bump reinforcement layer (r1). In this case, it is preferable that the third support sheet (Y3) has expandability.

[0074] Furthermore, it is preferable that step (T1) be included after step (S5) and before step (S6) because this eliminates the need to handle the semiconductor wafer individually and eliminates the need to prepare a support for handling the semiconductor wafer separately from the third composite sheet (α3). In this case, if the bump reinforcement layer (r1) is not present, the grinding hardened material layer (p1) may enter the grooves 13 of the semiconductor chip manufacturing wafer 10-1, come into contact with and adhere to the third curable resin layer (X3) or the wafer back surface protective film (r2) after curing, making it difficult to peel off the grinding hardened material layer (p1) in step (S6), and potentially damaging the wafer back surface protective film (r2) when peeling off the grinding hardened material layer (p1). In the semiconductor chip manufacturing method of the present invention, since the bump-forming surface is covered with the bump reinforcement layer (r1), such problems are also prevented.

[0075] The semiconductor chip manufacturing method of the present invention preferably includes the following step (Tα) after step (T1). • Process (Tα): A process of separating the third-curing resin layer (X3) or the wafer back surface protective film (r2) along the planned division line. In step (Tα), the third curable resin layer (X3) or the wafer back surface protective film (r2) can be divided along the planned division line by conventionally known methods such as blade dicing, laser dicing, or plasma dicing, thereby forming individual pieces. In this case, when cutting is performed from the third curable resin layer (X3) or the wafer back protective film (r2) side, it is preferable that the third curable resin layer (X3) or the wafer back protective film (r2) be infrared transparent or transparent so that the planned division line (the division position of the semiconductor wafer) can be easily confirmed.

[0076] [Process (U)] One embodiment of the semiconductor chip manufacturing method of the present invention may further include the following step (U). • Step (U): A step of removing the bump reinforcement film (r1) covering the top of the bump, or the bump reinforcement film (r1) attached to a part of the top of the bump, to expose the top of the bump. Exposure treatments to expose the top of the bump include etching treatments such as wet etching and dry etching. Examples of dry etching processes include plasma etching. Furthermore, exposure processing may be performed to retract the protective film until the tops of the bumps are exposed, if the tops of the bumps are not exposed on the surface of the protective film.

[0077] The timing of process (U) is not particularly limited as long as the bump reinforcement film (r1) is exposed; for example, it may be performed after process (S2), before process (S3), or after process (S6).

[0078] Furthermore, as one embodiment of the semiconductor chip manufacturing method of the present invention, for example, after forming the first curable resin layer (X1) and the second curable resin layer (X2) described above, the first curable resin layer (X1) and the second curable resin layer (X2) may be cured sequentially, or simultaneously, to form a bump reinforcement film (r1) and a grinding cured layer (p1). In the case of this manufacturing method, steps (S1) to (S4) may be replaced with the following steps (S1) to (S4β). In other words, one embodiment of the semiconductor chip manufacturing method of the present invention may be a semiconductor chip manufacturing method having the following steps.

[0079] The following steps (S1) to (S4β) are included in this order: Step (S1): A step of forming a first curable resin layer (X1) on the bump-forming surface of a semiconductor wafer having a bump-forming surface with bumps on one side, so as to cover the bump-forming surface. • Step (S3β): A step of forming a second curable resin layer (X2) on the bump and the first curable resin layer (X1). • Process (S3α): A process to flatten the surface of the second curing resin layer (X2) opposite to the bump-forming surface. • Process (S4β): A process to cure the first curable resin layer (X1) and the second curable resin layer (X2) to form a bump reinforcement film (r1) and a grinding cured material layer (p1). Furthermore, a method for manufacturing a semiconductor chip, comprising the following steps (S5) and (S6) in this order after step (S4β). • Process (S5): A process of grinding the surface of the semiconductor wafer opposite to the bump-forming surface. • Step (S6): Step of peeling off the hardened material layer (p1) for grinding. In this manufacturing method, steps (S3β) and (S3α) can be performed simultaneously, or step (S3α) can be performed between steps (S3β) and (S4β). The manufacturing method may further include the following step (SC) simultaneously with step (S5), or after step (S5) and before step (S6), or after step (S6). • Process (SC): The process of separating the semiconductor wafer into individual pieces.

[0080] In other words, this embodiment differs from the previously described embodiment only in that the second curable resin layer (X2) is formed on the uncured first curable resin layer (X1). Steps (S1), (S3α), (S5), (S6), and (SC) are as described above, and their preferred embodiments are also the same. Furthermore, the preferred embodiments of steps (S3β) and (S4β) are the same as those of steps (S3) and (S4), so their explanation is omitted here. Furthermore, the process may also include the aforementioned processes (SD), (W), (T), (U), etc. As explained above, these processes and their preferred forms (including the timing of implementation, etc.) are the same, so their explanation is omitted here.

[0081] Next, the first curable resin (x1) and the second curable resin (x2) used in the semiconductor chip manufacturing method of the present invention will be described. Furthermore, the first composite sheet (α1), the second composite sheet (α2), the intermediate protective layer (p2), the third curable resin (x3), and the third composite sheet (α3) that can be used in one embodiment of the semiconductor chip manufacturing method of the present invention will also be described.

[0082] <First hardening resin (x1)> The first curable resin (x1) may be, for example, thermosetting or energy ray curable, and may have both thermosetting and energy ray curable properties. The first curable resin layer (X1) formed from the first curable resin (x1) is cured by heating or energy ray irradiation to form a bump reinforcement film (r1). Furthermore, as mentioned above, it is preferable that the first curable resin (x1) is used in step (S1) as a first curable resin film (x1f).

[0083] <First-curing resin film (x1f)> Figure 13 shows a schematic cross-sectional view of an example of a first-curing resin film (x1f) (hereinafter also referred to as "resin film (x1f)"). The resin film (x1f) shown in Figure 13 has a first release film 151 on one side (hereinafter also referred to as the "first side") x1a and a second release film 152 on the other side (hereinafter also referred to as the "second side") x1b opposite to the first side x1a. A resin film (x1f) having such a configuration is suitable for storage, for example, in roll form.

[0084] In the resin film (x1f) shown in Figure 13, one of the first release film 151 and the second release film 152 is removed, and the resulting exposed surface becomes the surface to be attached to the object. Then, the remaining other part of the first release film 151 and the second release film 152 is removed, and the resulting exposed surface becomes the surface to be attached to the first support sheet (Y1) for forming the first composite sheet (α1) described later. The remaining other part of the first release film 151 and the second release film 152 may also function as the first support sheet (Y1).

[0085] The resin film (x1f) contains resin components. Furthermore, the resin film (x1f) may or may not contain components other than the resin component. Preferred embodiments of the resin film (x1f) include, for example, a resin component, a filler, and various additives that do not fall under either of these categories (resin component or filler) and have the effect of adjusting the storage modulus of the resin film (x1f). Examples of additives that have an effect of adjusting the storage modulus of the resin film (x1f) include rheology control agents (thixotropic agents), surfactants, and silicone oils.

[0086] Furthermore, the first curable resin film (x1f) used in one embodiment of the semiconductor chip manufacturing method of the present invention preferably satisfies the following requirement (1). <Requirement (1)> Under conditions of a temperature of 90°C and a frequency of 1Hz, strain is induced in a test specimen of the first curable resin film (x1f) with a diameter of 25 mm and a thickness of 1 mm, and the storage modulus of the test specimen is measured. When the storage modulus of the test specimen is defined as Gc1 when the strain is 1%, and as Gc300 when the strain is 300%, the X value calculated by the following formula (i) is 19 or greater and less than 10,000. X = Gc1 / Gc300····(i)

[0087] The test specimen used to measure the storage modulus is in the form of a film, and its planar shape is circular. The test specimen may be a single layer of the resin film (x1f) with a thickness of 1 mm, but it is preferable that it be a laminated film composed of multiple single layers of the resin film (x1f) with a thickness of less than 1 mm, which are stacked together, in terms of ease of manufacture. The thicknesses of the multiple single layers of resin film (x1f) constituting the laminated film may all be the same, all be different, or only some may be the same, but it is preferable that they all be the same in terms of ease of manufacture. In this specification, not limited to Gc1 and Gc300, "storage modulus of the test specimen" means "the storage modulus of the test specimen corresponding to the strain generated when a strain is induced in a test specimen of a resin film with a diameter of 25 mm and a thickness of 1 mm under the conditions of a temperature of 90°C and a frequency of 1 Hz."

[0088] A resin film (x1f) that satisfies requirement (1) is flexible and therefore suitable for application to objects with uneven surfaces, such as semiconductor wafers having bump-forming surfaces with bumps. For the same reason, it is particularly suitable for application to semiconductor chip manufacturing wafers having grooves as planned division lines. The resin film (x1f) is pressed and attached to the bump-forming surface of the semiconductor wafer. Furthermore, when a resin film (x1f) that satisfies requirement (1) is pressed and attached to the bump-forming surface of a semiconductor wafer, the bumps penetrate the resin film (x1f), and the tops of the bumps protrude from the resin film (x1f). In addition, the remaining resin film (x1f) is more easily suppressed in the upper part, including the tops of the bumps. Moreover, a resin film (x1f) that satisfies requirement (1) can suppress the phenomenon in which the area of ​​the resin film (x1f) after attachment expands compared to the initial (before attachment) area (hereinafter also referred to as "overhang"). Furthermore, if the semiconductor wafer is a semiconductor wafer having grooves, such as semiconductor chip manufacturing wafer 10-1, the resin film (x1f) that satisfies requirement (1) is pressed and attached to the bump-forming surface of the semiconductor wafer, so that the resin film (x1f) fills the grooves with good embedding properties. Furthermore, when a resin film (x1f) that satisfies requirement (1) is used, it is possible to suppress the unintentional exposure of the bottom portion of the bump or the bump-forming surface (hereinafter also referred to as "repulsion") when the resin film (x1f) and its cured product, the bump-reinforcing film (r1), are provided on the bump-forming surface.

[0089] The resin film (x1f) may consist of one layer (single layer) or of two or more layers. If the resin film (x1f) consists of multiple layers, these layers may be identical or different from each other, and the combination of these layers is not particularly limited.

[0090] The thickness of the resin film (x1f) is preferably 10 μm or more, more preferably 20 μm or more, even more preferably 30 μm or more, and even more preferably more than 30 μm, from the viewpoint of improving coverage of the bump-forming surface of the semiconductor wafer for semiconductor chip fabrication and further improving embedding into the grooves of the semiconductor wafer for semiconductor chip fabrication. It is also preferably 200 μm or less, more preferably 150 μm or less, even more preferably 130 μm or less, even more preferably 100 μm or less, and even more preferably 80 μm or less. Here, "thickness of the resin film (x1f)" refers to the total thickness of the resin film (x1f). For example, the thickness of a resin film (x1f) consisting of multiple layers refers to the total thickness of all the layers that make up the resin film (x1f).

[0091] (Composition for forming first-curing resin films) A first-curable resin film (x1f) can be formed using a first-curable resin film forming composition containing its constituent materials. For example, a resin film (x1f) can be formed by coating the surface to be formed with the first-curable resin film forming composition and drying it as necessary.

[0092] A first thermosetting resin film (x1f-1) (hereinafter also referred to as "resin film (x1f-1)") can be formed using a first thermosetting resin film forming composition (x1f-1-1), and a first energy ray curable resin film (x1f-2) (hereinafter also referred to as "resin film (x1f-2)") can be formed using a first energy ray curable resin film forming composition (x1f-2-1).

[0093] The coating of the first curable resin film-forming composition can be carried out by known methods, such as using various coaters including a spin coater, spray coater, air knife coater, blade coater, bar coater, gravure coater, roll coater, roll knife coater, curtain coater, die coater, knife coater, screen coater, Meyer bar coater, and kiss coater.

[0094] Regardless of whether the resin film (x1f) is thermosetting or energy ray curing, the drying conditions for the composition for forming the first curing resin film are not particularly limited. The resin film (x1f-1) and resin film (x1f-2) will be described in more detail below.

[0095] <First thermosetting resin film (x1f-1)> The heating temperature during curing of the first thermosetting resin film (x1f-1) is preferably 100 to 200°C, more preferably 110 to 170°C, and even more preferably 120 to 150°C.

[0096] (Composition for forming first thermosetting resin film (x1f-1-1)) Examples of the first thermosetting resin film forming composition (x1f-1-1) include a composition (x1f-1-1) (hereinafter also referred to as "composition (x1f-1-1)") containing a polymer component (A), a thermosetting component (B), a filler (D), and an additive (I).

[0097] [Potassium component (A)] Examples of polymer component (A) include polyvinyl acetal, acrylic resin, urethane resin, phenoxy resin, silicone resin, saturated polyester resin, and the like. Among these, the polymer component (A) is preferably polyvinyl acetal, from the viewpoint of adjusting Gc300 to an appropriate value and making it easier to adjust the X value to an appropriate value.

[0098] [Thermosetting component (B)] The thermosetting component (B) is a component that has thermosetting properties and is used to heat-cure the resin film (x1f-1) to form a hard cured product. The thermosetting component (B) contained in the composition (x1f-1-1) and the resin film (x1f-1) may be one type or two or more types, and if there are two or more types, their combination and ratio can be arbitrarily selected. Examples of thermosetting components (B) include epoxy thermosetting resins, polyimide resins, and unsaturated polyester resins. Among these, the thermosetting component (B) preferably includes an epoxy-based thermosetting resin. The thermosetting component (B) preferably further contains thermosetting agents such as phenolic thermosetting agents and amine thermosetting agents, and also preferably contains curing accelerators such as tertiary amines, imidazoles, and organophosphines.

[0099] [Filler (D)] The X value can be more easily adjusted by adjusting the amount of filler (D) in the composition (x1f-1-1) and the resin film (x1f-1). Furthermore, by adjusting the amount of filler (D) in the composition (x1f-1-1) and the resin film (x1f-1), the thermal expansion coefficient of the cured resin film (x1f-1) can be more easily adjusted. For example, by optimizing the thermal expansion coefficient of the cured resin film (x1f-1) for the object to which the cured product is formed, the reliability of the package obtained using the resin film (x1f-1) can be further improved. In addition, by using a resin film (x1f-1) containing filler (D), it is also possible to reduce the moisture absorption rate of the cured resin film (x1f-1) or improve its heat dissipation.

[0100] The filler (D) may be either an organic filler or an inorganic filler, but an inorganic filler is preferred. Preferred inorganic fillers include, for example, powders such as silica, alumina, talc, calcium carbonate, titanium white, red iron oxide, silicon carbide, and boron nitride; beads formed from these inorganic fillers in a spherical shape; surface-modified products of these inorganic fillers; single-crystal fibers of these inorganic fillers; and glass fibers. Among these, the inorganic filler is preferably silica or alumina.

[0101] [Additive (I)] By adjusting the type or amount of additive (I) in the composition (x1f-1-1) and the resin film (x1f-1), Gc1 can be appropriately adjusted, making it easier to adjust the X value. Among these, preferred additives (I) that allow for easier adjustment of the X value include, for example, rheology control agents, surfactants, and silicone oils.

[0102] More specifically, examples of the rheology control agent include polyhydroxycarboxylic acid esters, polycarboxylic acids, and polyamide resins. Examples of the surfactant include modified siloxanes. Alternatively, an acrylic resin corresponding to the polymer component (A) described above may be used as a surfactant. Examples of the silicone oil include aralkyl-modified silicone oil and modified polydimethylsiloxane, and examples of the modifying group include aralkyl groups, polar groups such as hydroxyl groups, and groups having unsaturated bonds such as vinyl groups and phenyl groups. Other examples of additives (I) besides those listed above include various general-purpose additives such as coupling agents, crosslinking agents, leveling agents, plasticizers, antistatic agents, antioxidants, ion scavenging agents, gettering agents, UV absorbers, tackifiers, and chain transfer agents. Preferably, the coupling agent is a compound that reacts with functional groups contained in polymer components or thermosetting components, and a silane coupling agent is more preferred.

[0103] (Method for producing a composition for forming a first thermosetting resin film (x1f-1-1)) The first thermosetting resin film-forming composition (x1f-1-1) is obtained by blending the components that constitute it. The order in which each component is added during formulation is not particularly limited, and two or more components may be added simultaneously. The mixture of each component may be diluted with an organic solvent or the like as appropriate.

[0104] <First-energy ray curable resin film (x1f-2)> When curing a first-energy ray-curable resin film (x1f-2) to form a cured bump-reinforcement film (r1), the curing conditions include, for example, an energy ray illuminance of 180-280 mW / cm². 2 It is preferable that the amount of energy rays during curing is 450 to 1,000 mJ / cm². 2 It is preferable that this be the case.

[0105] (Composition for forming first-energy ray-curable resin films (x1f-2-1)) Examples of the first-energy-ray-curable resin film forming composition (x1f-2-1) include a first-energy-ray-curable resin film forming composition (x1f-2-1) (hereinafter also referred to as "composition (x1f-2-1)") containing an energy-ray-curable component (a), a filler, and an additive.

[0106] [Energy ray curing component (a)] Energy ray curable component (a) is a component that hardens upon irradiation with energy rays. Examples of the energy-ray curable component (a) include a polymer (a1) having an energy-ray curable group and a weight-average molecular weight of 80,000 to 2,000,000, and a compound (a2) having an energy-ray curable group and a molecular weight of 100 to 80,000. The polymer (a1) may be at least partially crosslinked with a crosslinking agent, or it may not be crosslinked. Examples of the energy-ray curable group include functional groups having unsaturated carbon bonds, such as acryloyl groups, methacryloyl groups, and vinyl groups.

[0107] [Filling material] The X value can be more easily adjusted by adjusting the amount of filler in the composition (x1f-2-1) and the resin film (x1f-2). Furthermore, by adjusting the amount of filler in the composition (x1f-2-1) and the resin film (x1f-2), the thermal expansion coefficient of the cured resin film (x1f-2) can be more easily adjusted. For example, by optimizing the thermal expansion coefficient of the cured resin film (x1f-2) for the object on which the protective film is formed, the reliability of the package obtained using the resin film (x1f-2) can be further improved. In addition, by using a resin film (x1f-2) containing filler, it is possible to reduce the moisture absorption rate of the cured resin film (x1f-2) or improve its heat dissipation.

[0108] The filler contained in composition (x1f-2-1) and resin film (x1f-2) is the same as the filler (D) contained in composition (x1f-1-1) and resin film (x1f-1) described earlier. The manner in which the filler is contained in composition (x1f-2-1) and resin film (x1f-2) may be the same as the manner in which the filler (D) is contained in composition (x1f-1-1) and resin film (x1f-1). The fillers contained in the composition (x1f-2-1) and the resin film (x1f-2) may consist of only one type or two or more types, and if there are two or more types, their combination and ratio can be arbitrarily selected.

[0109] [Additives] The X value can be more easily adjusted by adjusting the type or amount of additives in the composition (x1f-2-1) and the resin film (x1f-2). The additive contained in composition (x1f-2-1) and resin film (x1f-2) is the same as the additive (I) contained in composition (x1f-1-1) and resin film (x1f-1) described earlier. For example, preferred additives that allow for easier adjustment of the X value include rheology control agents, surfactants, and silicone oils.

[0110] [Other ingredients] The composition (x1f-2-1) and the resin film (x1f-2) may contain other components that do not fall under any of the energy ray curable component (a), the filler, or the additive, as long as they do not impair the effects of the present invention. Other components include, for example, thermosetting components, photopolymerization initiators, coupling agents, and crosslinking agents. For example, by using a composition (x1f-2-1) containing the energy ray curable component (a) and the thermosetting component, the resin film (x1f-2) exhibits improved adhesion to the adherend upon heating, and the strength of the cured resin film (x1f-2) is also improved.

[0111] (Method for producing a composition for forming a first-energy ray-curable resin film (x1f-2-1)) The composition for forming a first-energy ray-curable resin film (x1f-2-1) is obtained by blending the components necessary to constitute it. Composition (x1f-2-1) can be manufactured in the same manner as composition (x1f-1-1) described earlier, except that the types of components used are different.

[0112] <First composite sheet (α1)> As described above, the first curable resin film (x1f) can be laminated with the first support sheet (Y1) to form the first composite sheet (α1). An example of the configuration of the first composite sheet (α1) is shown in Figure 14.

[0113] Furthermore, a specific example of the configuration of the first composite sheet (α1) is described below. For example, the first composite sheet (α1a) is a first composite sheet (α1) in which the first support sheet (Y1) is the base material and the first curable resin layer (X1) is provided on one side of the base material. Furthermore, the first composite sheet (α1b) is an adhesive sheet in which the first support sheet (Y1) is laminated with a base material and an adhesive layer, and the adhesive layer of the adhesive sheet is bonded to the first curable resin layer (X1). Furthermore, the first composite sheet (α1c) is an adhesive sheet in which the first support sheet (Y1) is laminated with a base material, an intermediate layer, and an adhesive layer in that order, and the adhesive layer of the adhesive sheet is bonded to the first curable resin layer (X1).

[0114] The first support sheet (Y1) used in the first composite sheet (α1) will be described below. <First support sheet (Y1)> The first support sheet (Y1) functions as a support for the first curable resin (x1). The following describes the base material of the first support sheet (Y1), the adhesive layer that the first support sheet (Y1) may have, and the intermediate layer.

[0115] (base material) The base material is in the form of a sheet or film, and its constituent materials include, for example, the following various resins. Examples of resins that make up the base material include polyolefins, ethylene copolymers, vinyl chloride resins (resins obtained using vinyl chloride as a monomer), polyethylene terephthalate, and urethane resins. Furthermore, examples of resins constituting the base material include crosslinked resins obtained by crosslinking one or more of the resins exemplified so far, and modified resins such as ionomers using one or more of the resins exemplified so far. The resin constituting the base material may be used alone or in combination of two or more types. If the base material is composed of two or more types of resin, the combination and ratio of these resins can be arbitrarily selected.

[0116] The base material may consist of only one layer (single layer) or two or more layers. If the base material consists of multiple layers, these layers may be identical or different from each other, and there are no particular limitations on the combination of these layers. The thickness of the substrate is preferably 5 μm to 1,000 μm, more preferably 10 μm to 500 μm, even more preferably 15 μm to 300 μm, and even more preferably 20 μm to 150 μm.

[0117] The base material should preferably have high thickness accuracy, that is, thickness variation should be suppressed regardless of the location. Among the constituent materials mentioned above, examples of materials with high thickness accuracy that can be used to construct such a base material include polyolefins, polyethylene terephthalate, and ethylene copolymers. The substrate can be manufactured by known methods. For example, a substrate containing a resin can be manufactured by molding a resin composition containing the resin.

[0118] (Adhesive layer) Examples of adhesives contained in the adhesive layer include those containing resins such as acrylic resins (adhesives made of resins having (meth)acryloyl groups), urethane resins (adhesives made of resins having urethane bonds), rubber resins (adhesives made of resins having a rubber structure), and silicone resins (adhesives made of resins having siloxane bonds). Among these, adhesives containing acrylic resins are preferred.

[0119] The adhesive layer may be formed using an energy-ray curable adhesive or a non-energy-ray curable adhesive. An adhesive layer formed using an energy-ray curable adhesive allows for easy adjustment of its physical properties before and after curing.

[0120] (Middle class) The intermediate layer is in the form of a sheet or film, and its constituent material can be appropriately selected according to the purpose and is not particularly limited. For example, if the purpose is to suppress deformation of the bump reinforcement film (r1) due to the shape of bumps present on the semiconductor surface being reflected in the protective film covering the semiconductor surface, a preferred constituent material for the intermediate layer would be a cured urethane (meth)acrylate, as it has high conformability to unevenness and further improves the adhesion of the intermediate layer.

[0121] The intermediate layer may consist of only one layer (single layer) or two or more layers. If the intermediate layer consists of multiple layers, these layers may be identical or different from each other, and there are no particular limitations on the combination of these layers. The thickness of the intermediate layer can be adjusted as appropriate according to the height of the bumps on the semiconductor surface to be protected, but it is preferably 50 μm to 600 μm, more preferably 70 μm to 500 μm, and even more preferably 80 μm to 400 μm, as it can easily absorb the effects of relatively tall bumps.

[0122] Next, the manufacturing method for the first composite sheet (α1) will be described.

[0123] [Method for manufacturing the first composite sheet (α1)] The first composite sheet (α1) can be manufactured by sequentially stacking the above layers in corresponding positional relationships. For example, when manufacturing the first support sheet (Y1) and laminating an adhesive layer or intermediate layer onto the substrate, the adhesive layer or intermediate layer can be laminated by coating the substrate with an adhesive composition or an intermediate layer forming composition, drying it as needed, or irradiating it with energy rays.

[0124] On the other hand, for example, when laminating a first curable resin layer (X1) on top of an adhesive layer already laminated on a substrate, it is possible to directly form the first curable resin layer (X1) by coating the adhesive layer with the first curable resin (x1). Similarly, when laminating an adhesive layer on top of an intermediate layer already laminated on a substrate, it is possible to directly form the adhesive layer by coating the intermediate layer with an adhesive composition. The first curable resin layer (X1) or the adhesive layer may be manufactured separately in advance by coating and laminated onto the adhesive layer or the intermediate layer, respectively.

[0125] <Second curable resin (x2)> Examples of the second curable resin (x2) include thermosetting and energy ray curing resins, and may possess both thermosetting and energy ray curing properties. The second curable resin layer (X2) formed from the second curable resin (x2) hardens to form a grinding cured material layer (p1). The material constituting the second curable resin (x2) is not particularly limited, as long as it is appropriately selected so that the grinding cured layer (p1) obtained by curing the second curable resin layer (X2) has the function of protecting the bump and semiconductor wafer from pressure and vibration during grinding in process (S5), and is also peelable in process (S6). For example, the grinding cured layer (p1) may have viscoelastic properties like rubber after curing, or it may be a resin that is rigid and hardens to a hard state. For example, preferred embodiments of the second curing resin (x2) include "ResiFlat®" (trade name, manufactured by DISCO Corporation) and "TEMPLOC®" (trade name, manufactured by Denka Corporation).

[0126] <Second composite sheet (α2)> The second composite sheet (α2) is not particularly limited as long as it has a configuration that can form a hardened material layer for grinding (p1), and for example, it can have the same configuration as the first composite sheet (α1). However, the second curable resin film (x2f) of the second composite sheet (α2) is formed from the same material as the second curable resin (x2) described above. The support substrate (Y2) of the second composite sheet (α2) is as described above. The support substrate (Y2) may consist only of a substrate, similar to the first support sheet (Y1), or it may be an adhesive sheet in which a substrate and an adhesive layer are laminated. The substrate and adhesive layer of the support substrate (Y2) may have the same configuration and material as the substrate and adhesive layer of the first support sheet (Y1).

[0127] <Intermediate protective layer (p2)> The intermediate protective layer (p2) may be formed by applying an intermediate protective layer-forming composition to the bumps and bump reinforcement films (r1) using a coating method such as the one described for forming the first curable resin (x1) on the bump-forming surface. Alternatively, the intermediate protective layer-forming composition may be formed into a film and used as an intermediate protective layer film (p2f) to cover the bumps and bump reinforcement films (r1). From the standpoint of workability, it is preferable to apply it as an intermediate protective layer film (p2f).

[0128] The intermediate protective layer formation composition can be appropriately selected considering the peelability of the grinding hardened layer (p1) and the peelability from the bumps and bump reinforcing film (r1). The intermediate protective layer (p2) can be made of, for example, a thermoplastic resin. The type of thermoplastic resin is not particularly limited as long as it has at least peelability from the grinding cured layer (p1) and the bumps and bump reinforcing films (r1). Examples include ionomers obtained by crosslinking the carboxyl groups of individual and / or composite ethylene-methacrylic acid-acrylic acid ester ternary copolymers, ethylene-methacrylic acid copolymers, ethylene-acrylic acid copolymers, etc., with metal ions such as sodium ions, lithium ions, and magnesium ions; polypropylene; soft polypropylene obtained by blending polypropylene with styrene-butadiene copolymer rubber, styrene-butadiene-styrene block copolymer rubber, styrene-isoprene-styrene block copolymer rubber, ethylene-propylene random copolymer rubber, ethylene-propylene rubber, etc.; polyurethane; polyethylene such as low-density polyethylene; ethylene-propylene block copolymer; ethylene-propylene random copolymer; ethylene-vinyl acetate copolymer; ethylene-methacrylic acid copolymer; ethylene-1-octene copolymer; ethylene-styrene copolymer; ethylene-styrene-diene copolymer; polybutene; and the like. Among these, at least one selected from ethylene-styrene copolymer, polyethylene, polypropylene, and polybutene is preferred, with ethylene-styrene copolymer being more preferred.

[0129] <Third hardening resin (x3)> The third curable resin (x3) is not particularly limited as long as it has a configuration that can form a wafer back surface protective film (r2) on the back surface of the semiconductor wafer. For example, it is preferable to use a third curable resin film (x3f) formation composition described later. For example, the third curable resin (x3) may be thermosetting or energy ray curable, and may have both thermosetting and energy ray curing properties. The third curable resin layer (X3) formed from the third curable resin (x3) is cured by heating or energy ray irradiation to form a wafer back surface protective film (r2). Furthermore, the thickness of the third curable resin layer (X3) is preferably 3 μm or more, more preferably 5 μm or more, and even more preferably 7 μm or more. Also, it is preferably 300 μm or less, more preferably 150 μm or less, and even more preferably 75 μm or less. Furthermore, in order to form the third curable resin layer (X3), it is preferable to use the third curable resin (x3) in the form of a third curable resin film (x3f) (hereinafter also referred to as "resin film (x3f)").

[0130] <Third composite sheet (α3)> The third composite sheet (α3) is not particularly limited as long as it is capable of forming a wafer back surface protective film (r2) on the back surface of the semiconductor wafer. It can have a laminated structure in which a third support sheet (Y3) and a third curable resin layer (X3) are stacked, and for example, it can have the same configuration as the first composite sheet (α1).

[0131] (Composition for forming a third-curing resin film) A third-curable resin film (x3f) can be formed using a third-curable resin film forming composition containing its constituent materials. For example, a resin film (x3f) can be formed by coating the surface to be formed with the third-curable resin film forming composition and drying it as necessary.

[0132] A third thermosetting resin film (x3f-1) (hereinafter also referred to as "resin film (x3f-1)") can be formed using a third thermosetting resin film forming composition (x3f-1-1), and a third energy ray curable resin film (x3f-2) (hereinafter also referred to as "resin film (x3f-2)") can be formed using a third energy ray curable resin film forming composition (x3f-2-1).

[0133] The coating of the third-curable resin film-forming composition can be carried out by known methods, such as using various coaters including a spin coater, spray coater, air knife coater, blade coater, bar coater, gravure coater, roll coater, roll knife coater, curtain coater, die coater, knife coater, screen coater, Meyer bar coater, and kiss coater.

[0134] Regardless of whether the resin film (x3f) is thermosetting or energy ray curing, the drying conditions for the composition for forming the third-curable resin film are not particularly limited. The third thermosetting resin film formation composition (x3f-1-1) and the third energy ray curable resin film formation composition (x3f-2-1) will be described in more detail below.

[0135] <Composition for forming a third thermosetting resin film (x3f-1-1)> Examples of the third thermosetting resin film forming composition (x3f-1-1) include a composition (x3f-1-1) (hereinafter also referred to as "composition (x3f-1-1)") containing a polymer component (A3), a thermosetting component (B3), a filler (D3), a colorant (J), and an additive (I3).

[0136] (Polymer component (A3)) As the polymer component (A3), for example, acrylic polymers are preferred, but other polymers such as polyester, phenoxy resin, polycarbonate, polyether, polyurethane, polysiloxane, and rubber polymers may also be used. The weight-average molecular weight (Mw) of the polymer component (A3) is preferably 20,000 to 3 million, more preferably 50,000 to 2 million. Polyvinyl acetal and saturated polyester resins may also be used.

[0137] (Thermosetting component (B3)) The thermosetting component (B3) is a component that has thermosetting properties and is used to heat-cure the resin film (x3f-1) to form a hard cured product. The thermosetting component (B3) contained in the composition (x3f-1-1) and the resin film (x3f-1) may be one type or two or more types, and if there are two or more types, their combination and ratio can be arbitrarily selected. For example, the thermosetting component (B3) can be the same as the thermosetting component (B) described above, and the preferred embodiment is also the same.

[0138] (Filler (D3)) By adjusting the amount of filler (D3) in the composition (x3f-1-1) and the resin film (x3f-1), the thermal expansion coefficient of the cured resin film (x3f-1) can be more easily adjusted. For example, optimizing the thermal expansion coefficient of the cured resin film (x3f-1) for the object to which the cured product is formed further improves the reliability of the package obtained using the resin film (x3f-1). Furthermore, by using a resin film (x3f-1) containing filler (C3), it is possible to reduce the moisture absorption rate of the cured resin film (x3f-1) or improve its heat dissipation. As the filler (D3), for example, a filler similar to the filler (D) described above can be used, and the preferred embodiment is also the same.

[0139] (Coloring agent (J)) Here, from the viewpoint of improving the visibility of the markings formed by laser marking and improving the design of the semiconductor chip by making grinding marks on the back surface of the semiconductor chip less visible, it is preferable that the third-curable resin film (x3f) and the third-curable resin film forming composition for forming the third-curable resin film (x3f) contain a coloring agent (J). Examples of colorants (J) include well-known materials such as inorganic pigments, organic pigments, and organic dyes.

[0140] (Additive (I3)) As additive (I3), for example, an additive similar to additive (I) described above can be used, and the preferred embodiment is also the same.

[0141] (Method for producing a composition for forming a third thermosetting resin film (x3f-1-1)) The third thermosetting resin film-forming composition (x3f-1-1) is obtained by blending the components necessary to constitute it. The order in which each component is added during formulation is not particularly limited, and two or more components may be added simultaneously. The mixture of each component may be diluted with an organic solvent or the like as appropriate.

[0142] <Composition for forming third-energy ray-curable resin films (x3f-2-1)> Examples of third-energy ray curable resin film forming compositions (x3f-2-1) include compositions (x3f-2-1) (hereinafter also referred to as "composition (x3f-2-1)") that contain an energy ray curable component (a3), a filler, a colorant, and an additive. The energy ray curable component (a3) ​​is a component that hardens upon irradiation with energy rays. For example, the same component as the aforementioned energy ray curable component (a) can be used. Other components included in composition (x3f-2-1) can be the same type as those included in the third thermosetting resin film forming composition (x3f-1-1).

[0143] (Method for producing a third-energy ray-curable resin film-forming composition (x3f-2-1)) The third-energy ray curable resin film forming composition (x3f-2-1) is obtained by blending the components necessary to constitute it. Composition (x3f-2-1) can be manufactured in the same manner as composition (x3f-1-1) described earlier, except that the types of components used are different.

[0144] A commercially available product may be used as the third curing resin (x3) or third composite sheet (α3). For example, "Adwill LC Tape" manufactured by Lintec Corporation can be used. Furthermore, the third support sheet (Y3) of the third composite sheet (α3) may be an adhesive sheet in which a base material and an adhesive layer are laminated. The base material and adhesive layer of the third support sheet (Y3) may have the same configuration and material as the base material and adhesive layer of the first support sheet (Y1). [Explanation of symbols]

[0145] 10-1, 10-2 Wafers for semiconductor chip fabrication 11 Semiconductor wafers 11a Bump-forming surface 11b Wafer back side 12 Bump 13 Groove 14 planned division lines 40 semiconductor chips x1 First hardening resin X1 First curable resin layer r1 Bump reinforcement film Y1 First support sheet α1 First Composite Sheet X2 Second curable resin layer p1 Hardened material layer for grinding Y2 Support base material p2 intermediate protective layer r2 wafer back surface protective film x1f First-curing resin film x1a 1st page x1b 2nd side 151 First release film 152 Second release film

Claims

1. The following steps (S1), (S2), (S2α), (S3), (S3α), and (S4) are included in this order: Step (S1): A step of forming a first curable resin layer (X1) on the bump-forming surface of a semiconductor wafer having a bump-forming surface with bumps on one side, so as to cover the bump-forming surface. Step (S2): A step to obtain a semiconductor wafer with a bump reinforcement film (r1) by curing the first curable resin layer (X1) to form a bump reinforcement film (r1). - Step (S2α): A step of forming an intermediate protective layer (p2) on the bump and bump reinforcement film (r1). - Step (S3): A step of forming a second curable resin layer (X2) on the bump and bump reinforcing film (r1) via the intermediate protective layer (p2). - Process (S3α): A process to flatten the surface of the second curing resin layer (X2) opposite to the bump-forming surface. - Process (S4): A process to cure the second curable resin layer (X2) and form a hardened material layer (p1) for grinding. Furthermore, a method for manufacturing a semiconductor chip, comprising the following steps (S5) and (S6) in this order after step (S4). - Process (S5): A process of grinding the surface of the semiconductor wafer opposite to the bump-forming surface. • Process (S6): Process of removing the hardened material layer (p1) for grinding.

2. The following steps (S1), (S2), (S3), (S3α), and (S4) are included in this order: Step (S1): A step of forming a first curable resin layer (X1) on the bump-forming surface of a semiconductor wafer having a bump-forming surface with bumps on one side, so as to cover the bump-forming surface. Step (S2): A step to obtain a semiconductor wafer with a bump reinforcement film (r1) by curing the first curable resin layer (X1) to form a bump reinforcement film (r1). - Step (S3): A step of forming a second curable resin layer (X2) on the bump and bump reinforcing film (r1). - Process (S3α): A process to flatten the surface of the second curing resin layer (X2) opposite to the bump-forming surface. - Process (S4): A process to cure the second curable resin layer (X2) and form a hardened material layer (p1) for grinding. Furthermore, a method for manufacturing a semiconductor chip, comprising the following steps (S5) and (S6) in this order after step (S4), - Process (S5): A process of grinding the surface of the semiconductor wafer opposite to the bump-forming surface. • Process (S6): Process of removing the hardened material layer (p1) for grinding. A method for manufacturing a semiconductor chip, wherein the semiconductor wafer is a semiconductor wafer for manufacturing a semiconductor chip in which grooves, which are intended to be divided lines, are formed on the bump-forming surface without reaching the surface opposite to the bump-forming surface.

3. A method for manufacturing a semiconductor chip according to claim 1 or 2, wherein the first curable resin (x1) for forming the first curable resin layer (X1) is a first curable resin film (x1f).

4. A method for manufacturing a semiconductor chip according to claim 3, wherein the first curable resin film (x1f) satisfies the following requirement (1). <Requirement (1)> Under conditions of a temperature of 90°C and a frequency of 1 Hz, strain is induced in a test piece of the first curable resin film (x1f) with a diameter of 25 mm and a thickness of 1 mm, and the storage modulus of the test piece is measured. When the storage modulus of the test piece is defined as Gc1 when the strain is 1% and as Gc300 when the strain is 300%, the X value calculated by the following formula (i) is 19 or more and less than 10,000. X=Gc1 / Gc300...(i)

5. Furthermore, a method for manufacturing a semiconductor chip according to any one of claims 1 to 4, comprising the following step (T) after step (S5). - Process (T): A process of forming a wafer back surface protective film (r2) on the side of the semiconductor wafer opposite to the bump formation surface.

6. A method for manufacturing a semiconductor chip according to any one of claims 1 to 5, wherein the bump reinforcement film (r1) is transparent or has infrared transmittance.

7. The following steps (S1), (S3β), (S3α), and (S4β) are included in this order: Step (S1): A step of forming a first curable resin layer (X1) on the bump-forming surface of a semiconductor wafer having a bump-forming surface with bumps on one side, so as to cover the bump-forming surface. - Step (S3β): A step of forming a second curable resin layer (X2) on the bump and the first curable resin layer (X1). - Process (S3α): A process to flatten the surface of the second curing resin layer (X2) opposite to the bump-forming surface. • Process (S4β): A process to cure the first curable resin layer (X1) and the second curable resin layer (X2) to form a bump reinforcement film (r1) and a cured material layer for grinding (p1). Furthermore, a method for manufacturing a semiconductor chip, comprising the following steps (S5) and (S6) in this order after step (S4β). - Process (S5): A process of grinding the surface of the semiconductor wafer opposite to the bump-forming surface. • Process (S6): Process of removing the hardened material layer (p1) for grinding.

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