Method for removing pentafluoride from molybdenum monofluoride and method for manufacturing semiconductor devices

Abstract

Provided are: a method for removing MoFx or MoFx and MoOFx, wherein a halogen-containing gas is brought into contact with a member having MoFx or MoFx and MoOFx deposited or coated thereon (where x represents a number greater than 0 and less than 6) to remove the MoFx or the MoFx and MoOFx from the member; and a method for manufacturing a semiconductor device, the method comprising said removal method. By using these methods, provided are: a method for removing deposited or coated matter from a member on which MoFx or MoFx and MoOFx, which are incorporated into MoF6 as impurities, are deposited or coated; and a method for manufacturing a semiconductor device, the method comprising a step for removing deposited or coated matter from a manufacturing apparatus for a semiconductor device on which MoFx or MoFx and MoOFx are deposited or coated, wherein clogging or contamination of the manufacturing apparatus can be avoided.

Description

[Technical Field]

[0001] This disclosure relates to a method for removing pentafluoride from molybdenum monofluoride and a method for manufacturing semiconductor devices. [Background technology]

[0002] Molybdenum hexafluoride (MoF6) is used as a raw material for depositing molybdenum metal in chemical vapor deposition (CVD) in the manufacture of semiconductor devices, solar cells, and other products. Furthermore, MoF6 is used as an etching material in the manufacturing process of semiconductor devices (Patent Document 1).

[0003] Paragraph

[0003] of Patent Document 2 states that during the production of MoF6, unreacted elemental metals (Mo) and intermediates from monofluoride to pentafluoride (MoF, MoF2, MoF3, MoF4, MoF5) may be mixed in as impurities, and that such impurities not only lead to a decrease in the purity of MoF6 but may also accumulate inside the reaction apparatus, potentially causing blockage of the reaction system and problems with the maintenance of the reaction apparatus. [Prior art documents] [Patent Documents]

[0004] [Patent Document 1] Japan Special Publication No. 2019-502253 [Patent Document 2] International Publication No. 2019 / 189715 [Overview of the project] [Problems that the invention aims to solve]

[0005] MoF6 contains MoF as an impurity x (x represents a number greater than 0 and less than 6. The same applies to x below.) Or, MoF x and MoOF x A method for removing the accumulated or covering material from a member is desired. In addition, when MoF6 is used in the manufacturing process of semiconductor devices as a film-forming material or an etching material for Mo, MoF mixed as an impurity in MoF6 x , or MoF x and MoOF x A semiconductor device manufacturing method including a step of removing the deposit or coating from a semiconductor device manufacturing apparatus (for example, a chamber, a pipe, etc.) on which is deposited or coated is desired, which can avoid clogging and contamination of the manufacturing apparatus.

[0006] The present disclosure has been made in view of the above circumstances, and MoF mixed as an impurity in MoF6 x , or MoF x and MoOF x A method for removing the deposit or coating from a member on which is deposited or coated, and a semiconductor device manufacturing method including a step of removing the deposit or coating from a semiconductor device manufacturing apparatus (for example, a chamber, a pipe, etc.) on which is deposited or coated, which can avoid clogging and contamination of the manufacturing apparatus, are provided. x , or MoF x and MoOF x The purpose is to provide.

Means for Solving the Problems

[0007] In view of such problems, as a result of intensive studies, the present inventors have found that by bringing a halogen-containing gas into contact with a member on which MoF x , or MoF x and MoOF x is deposited or coated, the deposit or coating can be removed from the member.

[0008] That is, the present inventors have found that the above problems can be solved by the following configuration.

[0009] [1] MoF x , or MoF x and MoOF x Bring a halogen-containing gas into contact with the deposited or coated member, and from the member MoFx , or MoF x and MoOF x Remove MoF x , or MoF x and MoOF x A method for removing [a certain value]. However, x represents a number greater than or equal to 0 and less than or equal to 6. [2] The halogen-containing gas is a compound gas containing a bond between a fluorine atom and an atom other than the fluorine atom, and the bond energy between the fluorine atom and the atom other than the fluorine atom is 2.5 eV or less, as described in [1]. x , or MoF x and MoOF x How to remove it. [3] The aforementioned bond energy is 1.7 eV or more and 2.5 eV or less, as described in [2]. x , or MoF x and MoOF x How to remove it. [4] The MoF described in [1] is a halogen-containing gas that contains fluorine. x , or MoF x and MoOF x How to remove it. [5] The MoF described in [1] is a halogen-containing gas which is fluorine gas. x , or MoF x and MoOF x How to remove it. [6] The MoF described in any one of [1] to [5], wherein the temperature of the member to which the halogen-containing gas is brought into contact is 0 to 400°C. x , or MoF x and MoOF x How to remove it. [7] (1) A step of bringing a semiconductor substrate into contact with MoF6 by circulating a gas containing MoF6 through a semiconductor processing apparatus comprising a chamber and piping connected to the chamber, and (2) MoF x , or MoF x and MoOF xA method for manufacturing a semiconductor device, comprising the step of bringing a halogen-containing gas into contact with at least one of the chamber and the piping, which are deposited or coated with a material. Hereinafter, x represents a number greater than 0 and less than 6. [8] The method for manufacturing a semiconductor device according to [7], wherein the halogen-containing gas is a compound gas containing a bond between a fluorine atom and an atom other than the fluorine atom, and the bond energy between the fluorine atom and the atom other than the fluorine atom is 2.5 eV or less. [9] The method for manufacturing a semiconductor device according to [8], wherein the binding energy is 1.7 eV or more and 2.5 eV or less.

[10] The method for manufacturing a semiconductor device according to [7], wherein the halogen-containing gas is a fluorine-containing gas.

[11] The method for manufacturing a semiconductor device according to [7], wherein the halogen-containing gas is fluorine gas.

[12] A method for manufacturing a semiconductor device according to any one of [7] to

[11] , wherein the temperature of at least one of the chamber and the piping into which the halogen-containing gas is brought into contact is 0 to 400°C. [Effects of the Invention]

[0010] According to this disclosure, MoF6 is mixed in as an impurity. x , or MoF x and MoOF x A method for removing deposits or coverings from a member that has been covered with or has been covered with such deposits or coverings, and MoF x , or MoF x and MoOF x This invention provides a stable method for manufacturing semiconductor devices that includes a step of removing the deposits or coatings from semiconductor device manufacturing equipment (e.g., chambers, piping, etc.) onto which such deposits or coatings have accumulated or coated, thereby avoiding blockage or contamination of the manufacturing equipment. [Modes for carrying out the invention]

[0011] The configurations and combinations thereof in the following embodiments are examples, and additions, omissions, substitutions, and other modifications are possible without departing from the spirit of the disclosure. Furthermore, the disclosure is not limited by the embodiments. In this specification, "~" is used to mean that the numbers before and after it include the lower and upper limits, respectively.

[0012] [MoF x , or MoF x and MoOF x [How to remove it] MoF of this disclosure x , or MoF x and MoOF x The removal method is MoF x , or MoF x and MoOF x A halogen-containing gas is brought into contact with a member to which a substance has been deposited or coated, and MoF is released from the member. x , or MoF x and MoOF x Remove MoF x , or MoF x and MoOF x This is a method for removing [a specific element]. However, x represents a number greater than or equal to 0 and less than or equal to 6.

[0013] The removal method disclosed herein allows MoF x , or MoF x and MoOF x Although the details of the mechanism by which it is removed are not clear, the disclosers speculate as follows: Molybdenum monofluoride to pentafluoride (MoF x , or MoF x and MoOF x The boiling point of MoF5 is higher than that of MoF6, making it more likely to remain on the surface of materials and inside semiconductor device manufacturing equipment. For example, the boiling point of MoF6 is 35°C at 1 atm, while the boiling point of MoF5 is 214°C at 1 atm. Thus, MoF x , or MoF x and MoOF xSince its boiling point is high, it tends to remain on the surface of components and inside semiconductor device manufacturing equipment. In the present disclosure, by bringing a halogen-containing gas into contact with MoF x , or MoF x and MoOF x , the oxidation of MoF x , or MoF x and MoOF x can be promoted, and it can be converted into a compound with a lower boiling point, and it is considered that MoF x , or MoF x [[ID=1۸]] and MoOF x can be removed.

[0014] Note that MoF x to be removed may be a part (for example, the surface layer) thereof that has become an oxyfluoride (MoOF x ). When the chamber is opened in an active atmosphere containing air or the like in a state where the above MoF x is deposited or coated, the surface layer may become an oxyfluoride (see, for example, J.Flu.Chem, 11, 6, 629 (1978), and Stu.Inorg.Chem, 19, 251 (1994)). The removal method of the present disclosure and the manufacturing method of a semiconductor device can also be applied to MoF x in such a surface-oxidized state. When MoF x and MoOF x are mixed, the mixture may be collectively referred to as "MoO y F z " from the mixing ratio of the two. In this case, y is greater than 0 and less than 3, and z is greater than 0 and less than 6. Note that it is possible to confirm that the deposit is MoF x by measuring the weight of the deposit. Also, it is possible to confirm that the deposit is a mixture of MoF x and MoOF x by X-ray diffraction (XRD) measurement and measurement of the weight of the deposit.

[0015] (Halogen-containing gas) While there are no particular restrictions on the halogen-containing gas as long as it contains halogens, it is preferable that it be a fluorine-containing gas (a gas containing fluorine). Examples of fluorine-containing gases include fluorine gas (F2 gas), chlorine fluoride gas (ClF gas), chlorine trifluoride gas (ClF3 gas), bromine fluoride gas (BrF gas), bromine trifluoride gas (BrF3 ​​gas), bromine pentafluoride gas (BrF5 gas), iodine pentafluoride gas (IF5 gas), iodine heptafluoride gas (IF7 gas), oxygen difluoride gas (OF2 gas), xenon difluoride gas (XeF2 gas), xenon tetrafluoride gas (XeF4 gas), molybdenum hexafluoride gas (MoF6 gas), NF3 gas, CF4 gas, C2F6 gas, or mixtures thereof. Furthermore, halogen-containing gases are gases of compounds that include a bond between a fluorine atom and an atom other than the fluorine atom, and it is preferable that the bond energy between the fluorine atom and the atom other than the fluorine atom is 2.5 eV or less. Note that the "atom other than the fluorine atom" may be a fluorine atom. Examples of such gases include compounds represented by the following general formula (1). MF n (1) [M is a fluorine atom, chlorine atom, bromine atom, iodine atom, oxygen atom, or noble gas (argon, xenon, or krypton) atom, and n is a number from 1 to 7.] The compound represented by the above general formula (1) is preferably fluorine gas (F2 gas), chlorine trifluoride gas (ClF3 gas), iodine heptafluoride gas (IF7 gas), or molybdenum hexafluoride gas (MoF6 gas), more preferably chlorine trifluoride gas (ClF3 gas) or iodine heptafluoride gas (IF7 gas), and particularly preferably chlorine trifluoride gas (ClF3 gas). The halogen-containing gas is a compound gas containing a bond between a fluorine atom and an atom other than the fluorine atom, and it is more preferable that the bond energy between the fluorine atom and the atom other than the fluorine atom is 1.7 eV or more and 2.5 eV or less. The halogen-containing gas may be diluted with an inert gas such as nitrogen, helium, argon, or neon.

[0016] (Component) MoF of this disclosure x , or MoF x and MoOF x There are no particular restrictions on the components to which the removal method is applied. Components include, for example, pipes, chambers, and storage containers. The materials used to make up the components are not particularly limited, but metals are preferred, and examples include stainless steel, manganese steel, aluminum, aluminum alloys, nickel, and nickel alloys.

[0017] While not particularly limited, the stainless steel used can include, for example, martensitic stainless steel, ferritic stainless steel, austenitic stainless steel, and other types of stainless steel. SUS304, SUS304L, SUS316, and SUS316L are particularly preferred.

[0018] While not particularly limited, manganese steels such as SMn420, SMn433, SMn438, SMn443 as specified in JIS G 4053:2016, or STH11, STH12 as specified in JIS G 3429:2013 can be used.

[0019] The aluminum alloy is not particularly limited, but for example, alloys of aluminum with copper, manganese, silicon, magnesium, zinc, nickel, etc. can be used.

[0020] The nickel alloy is not particularly limited, but for example, Hastelloy, Inconel, etc., can be used.

[0021] The surface of the component may be treated with mirror polishing, acid cleaning, electropolishing, or surface coating.

[0022] The temperature of the component to which the halogen-containing gas is brought into contact is not particularly limited, but is preferably 0 to 400°C, more preferably 20 to 200°C, and even more preferably 40 to 150°C.

[0023] There is no particular limitation on the pressure when contacting the halogen-containing gas. For example, it can be appropriately set within the range of 1×10 -5 ~1000 kPa, preferably 1×10 -4 ~300 kPa, and more preferably 1×10 -3 ~100 kPa.

[0024] The time for contacting the halogen-containing gas is not particularly limited. For example, it can be appropriately set within the range of 1 second or more and 24 hours or less, preferably 10 seconds or more and 10 hours or less, and more preferably 30 seconds or more and 1 hour or less.

[0025] [Method for manufacturing a semiconductor device] The method for manufacturing a semiconductor device of the present disclosure includes (1) a step of flowing a gas containing MoF6 through a semiconductor processing apparatus including a chamber and a pipe connected to the chamber to contact MoF6 with a semiconductor substrate, and (2) a step of contacting a halogen-containing gas with at least one of the chamber and the pipe on which MoF x , or MoF x and MoOF x are deposited or coated. However, x represents a number greater than 0 and less than 6.

[0026] Regarding the material constituting the chamber of the semiconductor processing apparatus and the material constituting the pipe connected to the chamber in the method for manufacturing a semiconductor device of the present disclosure, they are the same as the materials constituting the members described in the method for removing MoF x , or MoF x and MoOF x .

[0027] The gas containing MoF6 in the step (1) above may be a gas containing 100% by volume of MoF6, or a gas diluted with an inert gas such as nitrogen or argon. By circulating a gas containing MoF6 through a semiconductor processing apparatus, for example, a Mo film can be formed on a substrate. Alternatively, by circulating a gas containing MoF6 through a semiconductor processing apparatus, for example, at least a portion of a layer, such as an oxide film, can be etched from a substrate on which such a layer has been formed. By performing these processes, semiconductor devices can be manufactured.

[0028] Step (2) above involves mixing in the MoF6 used in step (1) above as an impurity and depositing or coating it with MoF x , or MoF x and MoOF x This is a process of contacting a halogen-containing gas with the MoF x , or MoF x and MoOF x This removes the blockage and prevents contamination of the manufacturing equipment.

[0029] The halogen-containing gas in step (2) above is the aforementioned MoF x , or MoF x and MoOF x This is similar to the halogen-containing gas removal method described above. The temperature of at least one of the chambers and piping that is brought into contact with the halogen-containing gas is not particularly limited, but is preferably 0 to 400°C, more preferably 20 to 200°C, and even more preferably 40 to 150°C.

[0030] There are no particular restrictions on the pressure when contacting the halogen-containing gas, but for example, 1 × 10 -5 It can be set appropriately within the range of ~1000kPa, 1 x 10 -4 ~300kPa is preferred, 1 × 10 -3 ~100kPa is more preferable.

[0031] The contact time with the halogen-containing gas is not particularly limited, but can be appropriately set within a range of, for example, 1 second to 24 hours, preferably 10 seconds to 10 hours, and more preferably 30 seconds to 1 hour. [Examples]

[0032] The present disclosure will be further described below with reference to examples, but the present disclosure is not limited in any way to these examples.

[0033] Using actual semiconductor manufacturing equipment, MoF x , or MoF x and MoOF x Experiments involving the deposition and blockage of MoF, and contact with specific gases such as halogen-containing gases, are difficult due to equipment limitations. Therefore, in this embodiment, the MoF to be removed is determined by a model experiment. x , or MoF x and MoOF x The condition was intentionally induced, and the method of this disclosure was applied to it for evaluation.

[0034] <Model Experiment (1)> MoF x Reconstruction of sediment Mo powder is placed in a 25mm diameter, 100ml volume Ni tube, then MoF6 is introduced and the tube is sealed. The reaction is carried out for 1 hour under conditions of an internal temperature of 150°C and an internal pressure of 70kPa, thereby intentionally producing MoF6. x (x represents a number greater than 0 and less than 6) was deposited. From the weight increase of the above deposit, the average composition was found to be MoF 3.0 I confirmed that this was the case.

[0035] (Comparative Example 1) MoF x Contact with oxygen gas In the container holding the sediment obtained in model experiment (1), oxygen gas, a combustion-supporting gas sometimes used for chamber cleaning, was introduced, and the internal temperature was set to 100°C and the internal pressure to 10kPa. Although the sediment was brought into contact with the oxygen gas, the sediment remained in the container even after 1 hour of contact.

[0036] (Example 1-1) MoF x Fluorine gas is brought into contact with it. In the container holding the sediment obtained in model experiment (1), fluorine gas, a halogen-containing gas, was introduced, and the internal temperature was set to 100°C and the internal pressure to 10 kPa. When the fluorine gas was brought into contact with the sediment, 34.3% by mass of the sediment disappeared after 2 minutes of contact. Furthermore, after 10 minutes of contact, all of the sediment had disappeared.

[0037] (Examples 1-2) MoF x Contact with ClF3 gas In the model experiment (1), when chlorine trifluoride gas, a halogen-containing gas, was introduced into a container containing the sediment obtained in the model experiment (1), and the internal temperature was set to 100°C and the internal pressure to 10 kPa, the sediment was brought into contact with the chlorine trifluoride gas. After 2 minutes of contact, 87.1% by mass of the sediment had disappeared. After 4 minutes of contact, all of the sediment had disappeared.

[0038] (Examples 1-3) MoF x Contact with IF7 gas In the container holding the sediment obtained in model experiment (1), iodine heptafluoride gas, a halogen-containing gas, was introduced, and the internal temperature was set to 100°C and the internal pressure to 10 kPa. When the iodine heptafluoride gas was brought into contact with the sediment, 41.0% by mass of the sediment disappeared after 2 minutes of contact. Furthermore, after 8 minutes of contact, all of the sediment had disappeared.

[0039] (Examples 1-4) MoF x MoF6 gas is brought into contact with it. In the container holding the sediment obtained in model experiment (1), molybdenum hexafluoride gas, a halogen-containing gas, was introduced, and the internal temperature was set to 100°C and the internal pressure to 10 kPa. When the sediment was brought into contact with the molybdenum hexafluoride gas, 41.0% by mass of the sediment disappeared after 2 minutes of contact. Furthermore, after 8 minutes of contact, all of the sediment had disappeared.

[0040] <Model Experiment (2)> MoF x Its oxyfluoride (MoOF xReconstruction of the deposition of inclusions in ) MoO3 powder is placed in a 25mm diameter, 100ml volume Ni tube, then MoF6 is introduced and the tube is sealed. The reaction is carried out for 1 hour under conditions of an internal temperature of 170°C and an internal pressure of 70kPa, thereby intentionally producing MoF6. x and MoOF x A mixture of (x represents a number greater than 0 and less than 6) was deposited. Note that the deposit is MoF x and MoOF x The presence of this mixed material was confirmed by X-ray diffraction (XRD) measurements and weight measurements of the sediment.

[0041] (Comparative Example 2) MoF x and MoOF x The mixture is brought into contact with oxygen gas. In the container holding the sediment obtained in model experiment (2), oxygen gas, a combustion-supporting gas sometimes used for chamber cleaning, was introduced, and the internal temperature was set to 130°C and the internal pressure to 10kPa. Although the sediment was brought into contact with the oxygen gas, the sediment remained in the container even after 1 hour of contact.

[0042] (Example 2-1) MoF x and MoOF x Fluorine gas is brought into contact with the mixture. In the container holding the sediment obtained in model experiment (2), fluorine gas, a halogen-containing gas, was introduced, and the internal temperature was set to 130°C and the internal pressure to 10 kPa. When the fluorine gas was brought into contact with the sediment, 28.1% by mass of the sediment disappeared after 2 minutes of contact. Furthermore, after 10 minutes of contact, all of the sediment had disappeared.

[0043] (Example 2-2) MoF x and MoOF x The mixture is brought into contact with ClF3 gas. In the container holding the sediment obtained in model experiment (2), chlorine trifluoride gas, a halogen-containing gas, was introduced, and the internal temperature was set to 130°C and the internal pressure to 10 kPa. When the chlorine trifluoride gas was brought into contact with the sediment, 92.6% by mass of the sediment disappeared after 2 minutes of contact. Furthermore, after 4 minutes of contact, all of the sediment had disappeared.

[0044] (Examples 2-3) MoF x and MoOF x Contact the mixture with IF7 gas. In the container holding the sediment obtained in model experiment (2), iodine heptafluoride gas, a halogen-containing gas, was introduced. By maintaining an internal temperature of 130°C and an internal pressure of 10 kPa, the sediment was brought into contact with the iodine heptafluoride gas. After 2 minutes of contact, 31.0% by mass of the sediment had disappeared. After 8 minutes of contact, all of the sediment had disappeared.

[0045] (Examples 2-4) MoF x and MoOF x MoF6 gas is brought into contact with the mixture. In the model experiment (2), when molybdenum hexafluoride gas, a halogen-containing gas, was introduced into a container holding the sediment, and the internal temperature was set to 130°C and the internal pressure to 10 kPa, the sediment was brought into contact with the molybdenum hexafluoride gas. After 2 minutes of contact, 31.0% by mass of the sediment had disappeared. After 8 minutes of contact, all of the sediment had disappeared.

[0046] The removal rates for the above examples and comparative examples after contacting the gases used for 2 minutes are summarized in Table 1 below.

[0047] [Table 1]

[0048] As is clear from Table 1, the halogen-containing gas removal method of this disclosure is MoF x , or MoF x and MoOF x The removal rate was high. [Industrial applicability]

[0049] According to this disclosure, MoF6 is mixed in as an impurity. x , or MoF x and MoOF xA method for removing deposits or coverings from a member that has been covered with or has been covered with such deposits or coverings, and MoF x , or MoF x and MoOF x This invention provides a stable method for manufacturing semiconductor devices that includes a step of removing the deposits or coatings from semiconductor device manufacturing equipment (e.g., chambers, piping, etc.) onto which such deposits or coatings have accumulated or coated, thereby avoiding blockage or contamination of the manufacturing equipment.

[0050] Although this disclosure has been described in detail and with reference to specific embodiments, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of this disclosure. This application is based on Japanese Patent Application No. 2021-111738 filed on July 5, 2021, the contents of which are incorporated herein by reference.

Claims

1. MoF ｘ or MoF ｘ and MoOF ｘ deposited or coated on a member are contacted with a fluorine-containing gas to promote the oxidation of MoFx or MoFx and MoOFx and convert them into compounds with lower boiling points, and MoF ｘ or MoF ｘ and MoOF ｘ are removed. A method for removing MoF ｘ or MoF ｘ and MoOF ｘ However, x represents a number greater than 0 and less than 6.

2. The fluorine-containing gas is a compound gas containing a bond between a fluorine atom and an atom other than the fluorine atom, and the bond energy between the fluorine atom and the atom other than the fluorine atom is 2.5 eV or less, as described in claim 1. ｘ , or MoF ｘ and MoOF ｘ How to remove it.

3. The MoF according to claim 2, wherein the bond energy is 1.7 eV or more and 2.5 eV or less. ｘ , or MoF ｘ and MoOF ｘ How to remove it.

4. The MoF according to claim 1, wherein the fluorine-containing gas is fluorine gas. ｘ , or MoF ｘ and MoOF ｘ How to remove it.

5. The MoF according to any one of claims 1 to 4, wherein the temperature of the member into which the fluorine-containing gas is brought into contact is 0 to 400°C. ｘ , or MoF ｘ and MoOF ｘ How to remove it.

6. (1) A semiconductor processing apparatus comprising a chamber and piping connected to the chamber, wherein MoF ６ A gas containing MoF is passed through the semiconductor substrate. ６ The process of bringing them into contact, (2) MoF ｘ , or MoF ｘ and MoOF ｘ A method for manufacturing a semiconductor device, comprising the step of contacting at least one of the chamber and the piping, which is deposited or coated with a fluorine-containing gas, with a fluorine-containing gas, thereby promoting the oxidation of MoFx, or MoFx and MoOFx, converting them into a compound with a lower boiling point, and removing MoFx, or MoFx and MoOFx. Herein, x represents a number greater than 0 and less than 6.

7. The method for manufacturing a semiconductor device according to claim 6, wherein the fluorine-containing gas is a compound gas containing a bond between a fluorine atom and an atom other than the fluorine atom, and the bond energy between the fluorine atom and the atom other than the fluorine atom is 2.5 eV or less.

8. The method for manufacturing a semiconductor device according to claim 7, wherein the binding energy is 1.7 eV or more and 2.5 eV or less.

9. The method for manufacturing a semiconductor device according to claim 6, wherein the fluorine-containing gas is fluorine gas.

10. A method for manufacturing a semiconductor device according to any one of claims 6 to 9, wherein the temperature of at least one of the chamber and the piping into which the fluorine-containing gas is brought into contact is between 0 and 400°C.

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