Method for manufacturing semiconductor devices and semiconductor manufacturing apparatus

The formation of a self-assembled monolayer on semiconductor substrates addresses etching challenges by enhancing selectivity and airtightness, enabling effective and defect-reduced etching processes for semiconductor devices.

JP7863499B2Active Publication Date: 2026-05-21SCREEN HOLDINGS CO LTD
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Patent Information

Application Number
JP2022204960
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2022-12-21
Publication Date
2026-05-21
Estimated Expiration
2042-12-21

AI Technical Summary

Technical Problem

Existing etching processes for semiconductor devices, such as three-dimensional NAND type flash memory, face challenges in achieving selective etching with high selectivity and preventing silicon component precipitation, due to issues with silicon nitride film etching rates and silicon oxide film etching selectivity.

Method used

A method involving the formation of a self-assembled monolayer (SAM) as a protective layer on the substrate, including steps of chemical adsorption, removal of unadsorbed molecules, surface modification, and densification to enhance SAM density and protective performance, allowing selective etching of the etchable layer.

Benefits of technology

The method enables efficient and selective etching of semiconductor layers with reduced film defects and improved airtightness, facilitating the production of semiconductor devices like three-dimensional NAND structures.

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Abstract

To provide a method for manufacturing a semiconductor device capable of successfully performing selective etching for a layer to be etched, and a manufacturing device thereof.SOLUTION: A method for manufacturing a semiconductor device includes processing of a substrate including a laminate in which a layer to be protected and a layer to be etched are alternately laminated. The method includes a step of selectively forming a self-assembled monolayer (SAM) on at least a surface of the layer to be protected, and a step of selectively etching the layer to be etched with the SAM as a protection layer. The SAM forming step includes a first contact step, a removal step, a surface modification step, and a second contact step. The first contact step chemically absorbs a SAM molecule by bringing a first process liquid containing the SAM molecule into contact with a surface of the layer to be protected. The removal step removes a SAM molecule which has not been chemically absorbed from the surface of the layer to be protected. The surface modification step surface-modifies a region in which no SAM molecule exists on the surface of the layer to be protected after the removal step into a region which can be chemically absorbed by a SAM molecule. The second contact step chemically absorbs the SAM molecule by bringing a second process liquid containing the SAM molecule and having the same kind or a different kind of the first process liquid into contact with the surface-modified region.SELECTED DRAWING: Figure 3
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Citation Information

Patent Citations

  • Apparatus for and method of forming monolayer film

    JP2009256796A

  • Etching method

    JP2013062278A

  • Substrate processing method and substrate processing device

    JP2020126934A

  • Semiconductor memory device and method of manufacturing semiconductor memory device

    JP2021027125A

  • Film forming method and film forming device

    JP2021108336A