Manufacturing method for semiconductor devices

Abstract

This method for manufacturing a semiconductor apparatus includes: a step for, after coating an adhesive (60) that has heat-dissipating properties and thermosetting properties onto the surfaces of a plurality of devices (20) that are bonded to the surface of an organic substrate (10), mounting heat-dissipating blocks (50) and attaching by heat treating; a step for coating an adhesive (100) that has heat-dissipating properties and thermosetting properties onto surfaces of the heat-dissipating blocks (50), so as to be higher than a height A of a mold resin (70) that encapsulates the devices (20) in a subsequent step; and a step for heat treating while adjusting the height by the thickness of the adhesive (100), so that the height from the surface of the organic substrate (10) to the surface of the adhesive (100) becomes the height A of the mold resin (70), and curing the adhesive (100).

Description

Technical Field

[0001] This application relates to a method for manufacturing a semiconductor device.

Background Art

[0002] In a module of a high-frequency product-compatible hybrid, which is an example of a conventional semiconductor device, when sealing with a molding resin, the height of the heat dissipation block is adjusted so that the heat dissipation block is exposed on the module surface. One side of the heat dissipation block is brought into contact with a device that generates heat during operation via a highly heat-conductive adhesive, and the other side is exposed on the module surface, thereby enabling the heat generated from the device to be easily dissipated to the outside of the module.

[0003] For example, Patent Document 1 discloses a method for manufacturing a semiconductor device in which an outer peripheral side surface is surrounded by resin such that one side of a heat dissipation block contacts the back surface of a die stage portion on which a semiconductor element is mounted and the other side is exposed on the module surface.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] However, in conventional semiconductor device manufacturing methods, it is difficult to precisely align the surface heights of multiple heat dissipation blocks due to dimensional tolerances of the heat dissipation block thickness and the bonding condition on the organic substrate. If the surface height of the heat dissipation block is higher than expected, the heat dissipation block may come into contact with the mold when clamped in the mold for molding resin encapsulation, and the device may be damaged by the clamping pressure of the mold. Conversely, if the surface height of the heat dissipation block is lower than expected, the heat dissipation block may be covered with molding resin, resulting in a deterioration of the device's heat dissipation performance.

[0006] This invention was made to solve the above-mentioned problems, and aims to provide a method for manufacturing a semiconductor device that precisely aligns the height of the heat dissipation block surface and exposes the heat dissipation block on the module surface without damaging the device. [Means for solving the problem]

[0007] A method for manufacturing a semiconductor device disclosed herein involves applying a first adhesive having heat dissipation and thermosetting properties to the surface of a plurality of devices bonded to the surface of a substrate, On the first adhesive of each device Equipped with a heat dissipation block and heat treatment A heat dissipation block for the device The bonding process and the surface of the heat dissipation block By applying a second adhesive that has heat dissipation and thermosetting properties, The height of the resin used to seal the device in a later process is greater than the height of the resin used to seal the device in a subsequent process. The height to the surface of the second adhesive is A process to make it higher, and the thickness of the second adhesive so that the height to the surface of the second adhesive becomes the height of the resin Up to the surface of the second adhesive The method is characterized by including a step of curing the second adhesive by heat treatment while adjusting its height.

[0008] Furthermore, in the semiconductor device manufacturing method disclosed herein, when a heat dissipation block is mounted on the surface of a plurality of devices bonded to the surface of a substrate, the height of the resin used to seal the devices in a subsequent process is greater than the height of the resin used to seal the devices in a subsequent process. The height to the surface of the adhesive is It has heat dissipation and thermosetting properties to increase The aforementionedThe process involves applying adhesive, then mounting the heat dissipation block, and applying the adhesive so that the height to the surface of the heat dissipation block is equal to the height of the resin. Up to the surface of the adhesive The method is characterized by including a step of curing the adhesive by applying heat treatment while adjusting the height. [Effects of the Invention]

[0009] According to this invention, by precisely aligning the height of the heat dissipation block surface, the heat dissipation block can be exposed on the module surface without damaging the device, and a high-performance semiconductor device can be easily obtained. [Brief explanation of the drawing]

[0010] [Figure 1] This is a flowchart showing the manufacturing process in the method for manufacturing a semiconductor device according to Embodiment 1. [Figure 2] This is a cross-sectional view showing the manufacturing process in the semiconductor device manufacturing method according to Embodiment 1. [Figure 3] This is a flowchart showing the manufacturing process in the semiconductor device manufacturing method according to Embodiment 2. [Figure 4] This is a cross-sectional view showing the manufacturing process in the semiconductor device manufacturing method according to Embodiment 2. [Figure 5] This is a flowchart showing the manufacturing process in the semiconductor device manufacturing method according to Embodiment 3. [Figure 6] This is a cross-sectional view showing the manufacturing process in the semiconductor device manufacturing method according to Embodiment 3. [Figure 7] This is a flowchart showing the manufacturing process in the method for manufacturing a semiconductor device according to Embodiment 4. [Figure 8] This is a cross-sectional view showing the manufacturing process in the method for manufacturing a semiconductor device according to Embodiment 4. [Modes for carrying out the invention]

[0011] Embodiment 1. FIG. 1 is a flowchart showing the manufacturing process in the manufacturing method of the semiconductor device according to Embodiment 1 of the present application. FIG. 2 is a cross-sectional view showing the manufacturing process in the manufacturing method of the semiconductor device according to Embodiment 1 of the present application. FIG. 2(a) is a cross-sectional view of the semiconductor device after mounting a heat dissipation block on the device on the organic substrate and performing heat treatment, FIG. 2(b) is a cross-sectional view of the semiconductor device after applying an adhesive on the heat dissipation block, FIG. 2(c) is a cross-sectional view of the semiconductor device after heat-treating the adhesive applied on the heat dissipation block, and FIG. 2(d) is a cross-sectional view of the semiconductor device after encapsulating with a molding resin.

[0012] First, as shown in FIG. 2(a), after applying an adhesive 60 having high heat dissipation and thermosetting properties, which is the first adhesive, on a plurality of devices 20 joined to an organic substrate 10 by solder 40, a heat dissipation block is mounted and heat treatment is performed to cure and bond the adhesive 60 (step S101). The height of the heat dissipation block 50 after bonding is set to be lower than the height A of the package. At this time, due to the dimensional tolerances of the thicknesses of the organic substrate 10, the solder 40, the device 20, the adhesive 60, and the heat dissipation block 50 and the bonding state on the organic substrate, variations occur in the height of the upper part of the heat dissipation block 50.

[0013] Subsequently, as shown in FIG. 2(b), an adhesive 100 having high heat dissipation and thermosetting properties, which is the second adhesive, is applied on the heat dissipation block 50 so as to be higher than the height A of the package (step S102).

[0014] Next, as shown in FIG. 2(c), the heat dissipation block 50 on all the devices 20 is sandwiched with a jig so that the height up to the adhesive 100 applied thereon becomes the height A of the package, and heat treatment is performed while adjusting the height with the thickness of the adhesive 100 to cure the adhesive 100 (step S103).

[0015] Finally, as shown in Fig. 2(d), the device 20 is resin-sealed using the mold resin 70 so that the height of the package becomes A (step S104), and the surface of the adhesive 100 is exposed on the upper surface of the package (mold resin 70). At this time, the surface of the adhesive 100 is brought into contact with the mold through a protective tape or the like so that the mold resin 70 does not flow onto the adhesive 100.

[0016] Here, since the device 20 is joined by flip chip and electrical connection is made from the lower surface of the device 20, the upper surface of the device 20 does not need to be conductive, and the adhesive 60 and the adhesive 100 can be either a conductive adhesive or an insulating adhesive.

[0017] As described above, according to the method of manufacturing a semiconductor device according to Embodiment 1, after applying the adhesive 60 having heat dissipation and thermosetting properties to the surfaces of the plurality of devices 20 joined to the surface of the organic substrate 10, the heat dissipation block 50 is mounted and heat-treated and adhered, and on the surface of the heat dissipation block 50, an adhesive 100 having heat dissipation and thermosetting properties is applied so as to be higher than the height A of the mold resin 70 for sealing the device 20 in a later process, and the height from the surface of the organic substrate 10 to the surface of the adhesive 100 is made to be the height A of the mold resin 70, and the adhesive 100 is heat-treated while adjusting the height with the thickness of the adhesive 100 to cure the adhesive 100. By leveling with the thickness of the adhesive 100 so that the height from the organic substrate 10 to the adhesive 100 becomes the same as the package height A, it is possible to absorb the dimensional tolerances of the thicknesses of the organic substrate, solder, device, first adhesive, and heat dissipation block and the variations due to the bonding state on the organic substrate, and by accurately aligning the heights of the heat dissipation portions, it is possible to obtain a high-performance semiconductor device without damaging the device and with the heat dissipation portions exposed on the module surface.

[0018] As a result, the height of the second adhesive becomes higher than the height A of the package, and the second adhesive contacts the mold during mold resin sealing, and the device is not damaged by the clamping pressure of the mold.

[0019] Furthermore, the height of the second adhesive becomes lower than the package height A, preventing mold resin from flowing onto the top of the heat dissipation block. In addition, compared to conventional methods, the cutting process can be reduced, eliminating problems such as burrs forming on the heat dissipation block or chipping of the mold resin, which are prone to quality defects.

[0020] Embodiment 2. In Embodiment 1, the step of heat-treating and curing the adhesive 100 was performed independently, but in Embodiment 2, a case in which this step is performed simultaneously with the step of resin-encapsulating the device 20 will be described.

[0021] Figure 3 is a flowchart showing the manufacturing process in the semiconductor device manufacturing method according to Embodiment 2 of the present application. 4 This is a cross-sectional view showing the manufacturing process in the semiconductor device manufacturing method according to Embodiment 2 of the present application. 4 (a) is a cross-sectional view of a semiconductor device on an organic substrate after heat treatment, in which a heat dissipation block is mounted. 4 (b) is a cross-sectional view of the semiconductor device after adhesive has been applied to the heat dissipation block. 4 (c) is a cross-sectional view of the semiconductor device after it has been sealed with molding resin and the adhesive has been cured.

[0022] In this second embodiment, the method for manufacturing a semiconductor device in steps S301 (Figure 4(a)) to S302 (Figure 4(b)) in Figure 3 is the same as the method for manufacturing a semiconductor device in steps S101 (Figure 2(a)) to S102 (Figure 2(b)) in Figure 1 of the first embodiment, and corresponding parts are denoted by the same reference numerals and their descriptions are omitted.

[0023] After step S302, in Embodiment 2, the heat treatment of the adhesive 100 is not performed independently. Instead, the adhesive 100 is sandwiched between molds while still uncured, and as shown in Figure 4(c), heat treatment is performed while adjusting the height by the thickness of the adhesive 100 so that the height up to the adhesive 100 applied on the heat dissipation blocks 50 on all devices 20 is the height A of the package. This hardens the adhesive 100, and the device 20 is resin-sealed with the mold resin 70 (step S303), so that the adhesive 100 is exposed on the top surface of the package (mold resin 70). At this time, protective tape or the like is sandwiched between the mold and the adhesive 100. 0 Avoid letting them stick together.

[0024] Here, since device 20 is joined using a flip chip and electrical connections are made from the bottom surface of device 20, the top surface of device 20 does not need to be conductive, and adhesives 60 and 100 can be either conductive or insulating adhesives.

[0025] As described above, the semiconductor device manufacturing method according to this second embodiment includes the steps of: applying a heat-dissipating and thermosetting adhesive 60 to the surface of a plurality of devices 20 bonded to the surface of an organic substrate 10, then mounting a heat dissipation block 50 and heat-treating it to bond them; applying a heat-dissipating and thermosetting adhesive 100 to the surface of the heat dissipation block 50 so that it is higher than the height A of the mold resin 70 used to seal the devices 20 in a later step; and heat-treating the adhesive 100 while adjusting the height so that the height from the surface of the organic substrate 10 to the surface of the adhesive 100 is the height A of the mold resin 70, thereby curing the adhesive 100. In this step, the adhesive 100 is hardened by sandwiching it in a mold and heat-treating it while adjusting the height, and the devices 20 are sealed with the mold resin 70. This not only provides the effects of the first embodiment, but also eliminates the need to perform the heat-treating step of the second adhesive separately, thus reducing the number of steps.

[0026] Embodiment 3. In Embodiments 1 and 2, the thickness of the adhesive 100 was used to match the height of the package, but in Embodiment 3, the case where the thickness of the adhesive 60 is used to match the height of the package will be described.

[0027] Figure 5 is a flowchart showing the manufacturing process in the semiconductor device manufacturing method according to Embodiment 3 of the present application. Figure 6 is a cross-sectional view showing the manufacturing process in the semiconductor device manufacturing method according to Embodiment 3 of the present application. Figure 6(a) is a cross-sectional view of the semiconductor device after a heat dissipation block has been mounted on the device on the organic substrate, Figure 6(b) is a cross-sectional view of the semiconductor device after heat treatment of the adhesive on which the heat dissipation block has been mounted, and Figure 6(c) is a cross-sectional view of the semiconductor device after it has been sealed with molding resin.

[0028] First, as shown in Figure 6(a), a thick layer of adhesive 60 with high heat dissipation and thermosetting properties is applied to multiple devices 20 joined to the organic substrate 10 by solder 40, and then the heat dissipation block is mounted (step S501). The height of the heat dissipation block 50 after mounting is made to be higher than the package height A by the amount of the thick layer of adhesive 60 applied. At this time, variations occur in the height of the top of the heat dissipation block 50 due to dimensional tolerances of the thickness of the organic substrate 10, solder 40, devices 20, adhesive 60, and heat dissipation block 50, and the bonding condition on the organic substrate.

[0029] Next, as shown in Figure 6(b), the device 20 is clamped in a jig so that the height up to the heat dissipation block 50 on all devices 20 is equal to the package height A, and heat treatment is performed while adjusting the height with the thickness of the adhesive 60. 60 To cure (Step S502).

[0030] Finally, as shown in Figure 6(c), the device 20 is resin-sealed using the molding resin 70 to a package height A (step S503), so that the surface of the heat dissipation block 50 is exposed on the top surface of the package (molding resin 70). At this time, the surface of the heat dissipation block 50 is in contact with the molding die via protective tape or the like to prevent the molding resin 70 from flowing onto the heat dissipation block 50.

[0031] Here, since the device 20 is joined using a flip-chip and the electrical connection is made from the bottom surface of the device 20, the top surface of the device 20 does not need to be conductive, and the adhesive 60 can be either a conductive adhesive or an insulating adhesive.

[0032] As described above, the semiconductor device manufacturing method according to this third embodiment includes the steps of: applying a heat-dissipating and thermosetting adhesive 60 to the surface of a plurality of devices 20 bonded to the surface of an organic substrate 10 such that the adhesive is higher than the height of the molding resin 70 used to seal the devices 20 in a later step when the heat dissipation block 50 is mounted; and then mounting the heat dissipation block 50; and heat-treating the adhesive 60 while adjusting the height by the thickness of the adhesive 60 so that the height from the surface of the organic substrate 10 to the surface of the heat dissipation block 50 is the height A of the molding resin 70, thereby curing the adhesive 60. By leveling the height from the organic substrate 10 to the heat dissipation block 50 with the thickness of the adhesive 60 so that the height is the same as the height A of the molding resin 70, it is possible to absorb dimensional tolerances of the thickness of the organic substrate, solder, devices, adhesive, and heat dissipation block, as well as variations due to the bonding state on the organic substrate. By accurately aligning the height of the heat dissipation block surface, the heat dissipation block can be exposed on the module surface without damaging the device, and a high-performance semiconductor device can be easily obtained.

[0033] As a result, the height of the heat dissipation block becomes greater than the package height A, preventing the heat dissipation block from contacting the mold during resin encapsulation and thus preventing the device from being damaged by the clamping pressure of the mold.

[0034] Furthermore, the adhesive height is lower than the package height A, preventing mold resin from flowing onto the top of the heat dissipation block. In addition, compared to conventional methods, the cutting process can be reduced, eliminating problems such as burrs forming on the heat dissipation block or chipping of the mold resin, which can easily lead to quality defects.

[0035] Embodiment 4. In Embodiment 3, the step of heat-treating and curing the adhesive 60 was performed independently, but in Embodiment 4, a case in which this step is performed simultaneously with the step of resin-encapsulating the device 20 will be described.

[0036] Figure 7 is a flowchart showing the manufacturing process in the method for manufacturing a semiconductor device according to Embodiment 4 of the present application. Figure 8 is a cross-sectional view showing the manufacturing process in the method for manufacturing a semiconductor device according to Embodiment 4 of the present application. Figure 8(a) is a cross-sectional view of a semiconductor device after a heat dissipation block has been mounted on the device on an organic substrate, and Figure 8(b) is a cross-sectional view of a semiconductor device after sealing with molding resin and curing the adhesive.

[0037] In this fourth embodiment, the method for manufacturing a semiconductor device in step S701 (Figure 8(a)) in Figure 7 is the same as the method for manufacturing a semiconductor device in step S501 (Figure 6(a)) in Figure 5 of the third embodiment, and corresponding parts are denoted by the same reference numerals and their descriptions are omitted.

[0038] After step S701, in Embodiment 4, the heat treatment of the adhesive 60 is not performed independently. Instead, the uncured adhesive 60 is sandwiched between molds, and as shown in Figure 8(b), the heat treatment is performed while adjusting the height of the adhesive 60 so that the height above all the heat dissipation blocks 50 on the device 20 is the height of the package A. This hardens the adhesive 60, and the device 20 is resin-sealed with the molding resin 70 (step S802), so that the surface of the heat dissipation blocks 50 is exposed on the top surface of the package (molding resin 70). At this time, the surface of the heat dissipation blocks 50 is in contact with the mold via protective tape or the like to prevent the molding resin 70 from flowing onto the heat dissipation blocks 50.

[0039] Here, since the device 20 is joined using a flip-chip and the electrical connection is made from the bottom surface of the device 20, the top surface of the device 20 does not need to be conductive, and the adhesive 60 can be either a conductive adhesive or an insulating adhesive.

[0040] As described above, the semiconductor device manufacturing method according to this embodiment 4 includes the steps of: applying a heat-dissipating and thermosetting adhesive 60 to the surface of a plurality of devices 20 bonded to the surface of an organic substrate 10 such that the adhesive is higher than the height of the molding resin 70 used to seal the devices 20 in a later step when the heat dissipation block 50 is mounted; mounting the heat dissipation block 50; and curing the adhesive 60 by heat treatment while adjusting the thickness of the adhesive 60 so that the height from the surface of the organic substrate 10 to the surface of the heat dissipation block 50 becomes the height A of the molding resin 70. In the step of curing the adhesive 60, the device 20 is sealed with the molding resin 70 while being heat-treated by sandwiching it in a molding die. This not only provides the effects of embodiment 3, but also eliminates the need to perform the heat treatment of the adhesive separately, thus reducing the number of steps.

[0041] While this application describes various exemplary embodiments and examples, the various features, aspects, and functions described in one or more embodiments are not limited to the application of a particular embodiment, but are applicable individually or in various combinations to the embodiments. Accordingly, countless variations not illustrated are envisioned within the scope of the art disclosed herein. For example, these include modifying, adding, or omitting at least one component, or even extracting at least one component and combining it with a component from another embodiment. [Explanation of symbols]

[0042] 10 organic substrates, 20 devices, 40 solder, 50 heat dissipation blocks, 60 adhesives, 70 molding resins, 100 adhesives.

Claims

1. The process involves applying a first adhesive having heat dissipation and thermosetting properties to the surface of multiple devices bonded to the surface of a substrate, then mounting a heat dissipation block onto the first adhesive of each device, and then heat-treating it to bond the heat dissipation block to the device, A step of applying a second adhesive having heat dissipation and thermosetting properties to the surface of the heat dissipation block so that the height to the surface of the second adhesive is greater than the height of the resin used to seal the device in a subsequent step, A step of curing the second adhesive by heat treatment while adjusting the thickness of the second adhesive to match the height to the surface of the second adhesive so that the height to the surface of the second adhesive is the height of the resin, A method for manufacturing a semiconductor device, characterized by including [the necessary components].

2. The method for manufacturing a semiconductor device according to claim 1, characterized in that, in the step of curing the second adhesive, the device, the first adhesive, the heat dissipation block, and the second adhesive are sandwiched in a mold, and heat treatment is performed while adjusting the height to the surface of the second adhesive to cure the second adhesive and seal the device with the resin.

3. The process involves applying an adhesive having heat dissipation and thermosetting properties to the surface of multiple devices bonded to the surface of a substrate, such that the height to the surface of the adhesive is greater than the height of the resin used to seal the devices in a subsequent process when a heat dissipation block is mounted, and then mounting the heat dissipation block. The process of curing the adhesive by performing heat treatment while adjusting the height to the surface of the adhesive with the thickness of the adhesive so that the height to the surface of the heat dissipation block is the height of the resin, A method for manufacturing a semiconductor device, characterized by including [the necessary components].

4. The method for manufacturing a semiconductor device according to claim 3, characterized in that, in the step of curing the adhesive, the device, the adhesive and the heat dissipation block are sandwiched in a mold, and heat treatment is performed while adjusting the height to the surface of the adhesive to cure the adhesive and the device is sealed with the resin.

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