Substrate processing equipment

Abstract

PURPOSE: To provide a substrate processing apparatus that suppresses deterioration of optical measurement accuracy.CONSTITUTION: The substrate processing apparatus of the embodiment includes: a chamber that has a head portion at an upper part and treats a wafer in an inner part; a recess that is provided on an upper face of the head portion; a translucent member including a portion surrounded by the recess, in which a first space between a side face of the portion and a side face of the recess is larger than a second space between a bottom face of the portion and a bottom face of the recess; a gas introduction portion that is provided at the head portion, and introduces a gas between the side face of the recess and the side face of the portion; and a plurality of gas supply portions that is provided in the head portion, communicates the recess with the chamber, and supplies the gas to the inside of the chamber.SELECTED DRAWING: Figure 1

Description

Technical Field

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[0001] The present invention relates to a substrate processing apparatus that performs processes such as film deposition and heat treatment on a substrate.

Background Art

[0002] As an example of a substrate processing apparatus, there is a vapor deposition apparatus that forms a film on a substrate. In the vapor deposition apparatus, a process gas containing a film raw material is introduced into the chamber to form a film on the substrate.

[0003] In the chamber of the vapor deposition apparatus, a viewing port may be provided to monitor the temperature of the substrate, the warp of the substrate, the reflectance of the substrate, etc. during film formation. Using a viewing port having a light-transmitting window and a measuring instrument provided outside the chamber, the temperature of the substrate, the warp of the substrate, the reflectance of the substrate, etc. can be optically measured.

[0004] By-products derived from the process gas containing the raw material may adhere to the light-transmitting window of the viewing port. When by-products adhere to the light-transmitting window, the light transmittance of the light-transmitting window changes. When the light transmittance of the light-transmitting window changes, the accuracy of optical measurement decreases, which is not preferable; Therefore, it is desirable to suppress the adhesion of by-products to the light-transmitting window and suppress the decrease in the accuracy of optical measurement.

Prior Art Documents

Patent Documents

[0005] <000,0022>

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] The problem to be solved by the present invention is to provide a substrate processing apparatus that suppresses a decrease in the accuracy of optical measurement.

Means for Solving the Problems

[0007] A substrate processing apparatus according to one aspect of the present invention comprises: a chamber having a head portion at its upper part in which wafer processing is performed; a recess provided on the upper surface of the head portion; a translucent member including a portion surrounded by the recess, wherein the first distance between the side surface of the portion and the side surface of the recess is greater than the second distance between the bottom surface of the portion and the bottom surface of the recess; a gas introduction portion provided on the head portion for introducing gas between the side surface of the recess and the side surface of the portion; and a plurality of gas supply portions provided on the head portion for connecting the recess and the chamber and supplying the gas into the chamber.

[0008] In the substrate processing apparatus according to the above embodiment, it is preferable that the bottom surface of the portion faces the entire area of ​​the openings of the plurality of gas supply units.

[0009] In the substrate processing apparatus according to the above embodiment, it is preferable that the second interval is smaller than the maximum opening width of the plurality of gas supply units.

[0010] In the substrate processing apparatus according to the above embodiment, it is preferable to further include a measuring instrument provided above the light-transmitting member.

[0011] In the substrate processing apparatus according to the above embodiment, it is preferable that the light-transmitting member further includes a flange, and that the flange is placed on the end of the recess. [Effects of the Invention]

[0012] According to the present invention, a substrate processing apparatus that suppresses the degradation of optical measurement accuracy can be realized. [Brief explanation of the drawing]

[0013] [Figure 1] A schematic cross-sectional view of the substrate processing apparatus according to the embodiment. [Figure 2] An enlarged schematic diagram of a part of the substrate processing apparatus of the embodiment. [Figure 3] An enlarged schematic diagram of a part of the substrate processing apparatus of the embodiment. [Figure 4]Enlarged schematic view of a part of the substrate processing apparatus according to the embodiment. [Figure 5] Enlarged schematic view of a part of the substrate processing apparatus according to the embodiment. [Figure 6] Enlarged schematic view of a part of the substrate processing apparatus according to the embodiment. [Figure 7] Enlarged schematic view of a part of the substrate processing apparatus according to the embodiment. [Figure 8] Schematic diagram when the shape of the gas discharge part of the embodiment is projected onto the bottom surface of the light-transmitting member. [Figure 9] Explanatory diagram of the vapor growth method according to the first embodiment. [Figure 10] Schematic cross-sectional view of the substrate processing apparatus of the comparative example. [Figure 11] Enlarged schematic view of a part of the substrate processing apparatus of the comparative example. [Figure 12] Explanatory diagram of the problems of the substrate processing apparatus of the comparative example. [Figure 13] Explanatory diagram of the operation and effect of the substrate processing apparatus according to the embodiment. [Figure 14] Explanatory diagram of the operation and effect of the substrate processing apparatus according to the embodiment. [Figure 15] Enlarged schematic view of a part of the substrate processing apparatus according to the first modification of the embodiment. [Figure 16] Schematic diagram when the shape of the gas discharge part of the first modification of the embodiment is projected onto the bottom surface of the light-transmitting member. [Figure 17] Enlarged schematic view of a part of the substrate processing apparatus according to the second modification of the embodiment.

Mode for Carrying Out the Invention

[0014] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0015] In this specification, the same or similar members may be denoted by the same reference numerals.

[0016] In this specification, the direction of gravity when the vapor phase growth apparatus is installed in a manner that enables film formation is defined as "down," and the opposite direction is defined as "up." Therefore, "lower part" means the position in the direction of gravity relative to a reference, and "downward" means the direction of gravity relative to a reference. Furthermore, "upper part" means the position in the opposite direction to the direction of gravity relative to a reference, and "upward" means the opposite direction to the direction of gravity relative to a reference. Also, "vertical direction" refers to the direction of gravity.

[0017] Furthermore, in this specification, "process gas" refers to a general term for gases used for film formation, and includes, for example, source gas, assist gas, dopant gas, carrier gas, and mixtures thereof.

[0018] The substrate processing apparatus of the embodiment comprises a chamber having a head portion at the top in which wafer processing is performed; a recess provided on the upper surface of the head portion; a translucent member including a portion surrounded by the recess, wherein the first distance between the side surface of the portion and the side surface of the recess is greater than the second distance between the bottom surface of the portion and the bottom surface of the recess; a gas introduction portion provided on the head portion for introducing gas between the side surface of the recess and the side surface of the portion; and a plurality of gas supply portions provided on the head portion that communicate the recess and the chamber and supply gas into the chamber.

[0019] Figure 1 is a schematic cross-sectional view of the substrate processing apparatus of the embodiment. The substrate processing apparatus of the embodiment is a vapor phase growth apparatus 100. The vapor phase growth apparatus 100 of the first embodiment is a single-wafer type epitaxial growth apparatus for epitaxially growing a single-crystal silicon carbide film on a single-crystal silicon carbide substrate, for example.

[0020] The vapor phase growth apparatus 100 of the embodiment comprises a chamber 10, a holder 12, a rotating body 14, a lower heater 16, an upper heater 18, a hood 20, and an insulating material 22. The chamber 10 includes a head section 30, a lower plate 32, a side wall 34, and a viewing port 44. The head section 30 includes a plurality of process gas supply sections 36, a buffer chamber 38 (recess), a purge gas introduction section 40 (gas introduction section), and a plurality of purge gas supply sections 42 (gas supply sections). The viewing port 44 includes a translucent window 46 (translucent member) and a fixing section 48. The lower plate 32 includes a gas exhaust port 52.

[0021] Chamber 10 is made of, for example, stainless steel. Inside Chamber 10, for example, a silicon carbide film is formed on a wafer W. Wafer W is an example of a substrate. Wafer W is, for example, a semiconductor wafer. Wafer W is, for example, a single-crystal silicon carbide wafer.

[0022] The chamber 10 includes a head section 30, a lower plate 32, a side wall 34, and a viewing port 44.

[0023] The head section 30 includes multiple process gas supply sections 36, a buffer chamber 38 (recess), a purge gas introduction section 40, and multiple purge gas supply sections 42. The lower plate 32 includes a gas exhaust port 52.

[0024] The process gas supply unit 36 ​​has, for example, a through hole that extends from the upper surface of the head unit 30 to the inside of the chamber 10. The process gas supply unit 36 ​​has the function of supplying process gas to the inside of the chamber 10. The process gas supplied from the multiple process gas supply units 36 includes, for example, a source gas for forming a silicon carbide film on the wafer W.

[0025] The buffer chamber 38 is a recess provided in the upper part of the head unit 30. The buffer chamber 38 is provided on the upper surface of the head unit 30. The buffer chamber 38 is provided below the viewing port 44.

[0026] The purge gas introduction section 40 has, for example, a through hole that extends from the side of the head section 30 to the side of the buffer chamber 38. The purge gas introduction section 40 has the function of introducing purge gas into the buffer chamber 38 from its side. The purge gas introduction section 40 introduces purge gas between the side of the buffer chamber 38 and the side of the protruding portion 46a of the translucent window 46. By introducing purge gas into the buffer chamber 38, the adhesion of by-products to the translucent window 46 of the viewing port 44 is suppressed.

[0027] The multiple purge gas supply units 42 have through holes that, for example, extend from the bottom of the buffer chamber 38 to the interior of the chamber 10. The multiple purge gas supply units 42 extend, for example, in the direction of gravity.

[0028] The purge gas supply unit 42 has the function of supplying purge gas from the buffer chamber 38 to the inside of the chamber 10. The purge gas supply unit 42 also functions as a path for light to pass through when optically measuring the state of the wafer W. The wafer W is positioned in the direction of extension of the purge gas supply unit 42.

[0029] The process gas supply section 36 is, for example, a hole that penetrates the head section 30. For example, part or all of the process gas supply section 36 may be tubular. The purge gas introduction section 40 is, for example, a hole that penetrates the side of the head section 30. For example, part or all of the purge gas introduction section 40 may be tubular. The purge gas supply section 42 is, for example, a hole that penetrates the head section 30. For example, part or all of the purge gas supply section 42 may be tubular.

[0030] The viewing port 44 is located above the head unit 30. For example, the temperature of the wafer W, the warpage of the wafer W, the reflectance of the wafer W, etc., can be optically measured using a measuring instrument (not shown) located outside the chamber 10 and the viewing port 44 having a translucent window 46.

[0031] The gas exhaust port 52 is provided on the lower plate 32. The gas exhaust port 52 has the function of discharging process gas, by-product gas, purge gas, etc., from the inside of the chamber 10 to the outside.

[0032] The sidewall 34 is provided between the head portion 30 and the lower plate 32. The sidewall 34 is, for example, cylindrical in shape.

[0033] The holder 12 is located inside the chamber 10. A wafer W can be placed on the holder 12.

[0034] The holder 12 is placed on top of the rotating body 14. The rotating body 14 is fixed to a rotating shaft (not shown).

[0035] The rotating shaft is rotatable by a rotational drive mechanism (not shown). By rotating the rotating shaft, the holder 12 can be rotated. By rotating the holder 12, the wafer W placed on the holder 12 can be rotated.

[0036] The lower heater 16 is located below the holder 12. The lower heater 16 is located inside the rotating body 14. The lower heater 16 heats the wafer W held in the holder 12 from below.

[0037] The upper heater 18 is located between the hood 20 and the sidewall 34. The upper heater 18 is positioned above the holder 12. The upper heater 18 heats the wafer W held in the holder 12 from above.

[0038] The hood 20 is, for example, cylindrical in shape. The hood 20 has a function to prevent the process gas from coming into contact with the upper heater 18, for example. The hood 20 also has a function to rectify the process gas flow, for example.

[0039] The insulation material 22 is installed between the upper heater 18 and the side wall 34.

[0040] Figures 2, 3, 4, 5, 6, and 7 are enlarged schematic diagrams of a part of the substrate processing apparatus of the embodiment. Figures 2 to 7 are enlarged schematic cross-sectional views of the vicinity of the viewing port 44 of the vapor phase growth apparatus 100.

[0041] Figure 2 is a top view of the vicinity of viewing port 44. Figure 3 is a section AA' of Figure 2. Figure 4 is a section BB' of Figure 2. Figure 5 is a section CC' of Figure 3. Figure 6 is a section DD' of Figure 3. Figure 7 is a section EE' of Figure 3.

[0042] The viewing port 44 includes a translucent window 46 (translucent member), a fixing part 48, and a sealing member 50.

[0043] The translucent window 46 has a protruding portion 46a and a flange 46b. The translucent window 46 is fixed to the head portion 30 by a fixing portion 48.

[0044] The translucent window 46 is made of a material that is transparent to light. For example, the translucent window 46 is made of quartz glass.

[0045] The flange 46b is provided at the end of the buffer chamber 38. A sealing member 50 is provided between the flange 46b and the head portion 30. The sealing member 50 has the function of maintaining airtightness inside the chamber 10. The sealing member 50 is, for example, an O-ring.

[0046] As shown in Figures 3 and 4, the protruding portion 46a is located inside the buffer chamber 38. As shown in Figures 5 and 6, the protruding portion 46a is surrounded by the buffer chamber 38. The sides and bottom of the protruding portion 46a are surrounded by the buffer chamber 38.

[0047] The side surface of the protruding portion 46a and the side surface of the buffer chamber 38 have a first gap (d1 in Figures 3 and 4). The first gap d1 is, for example, 1 mm or more and 5 mm or less.

[0048] Furthermore, the bottom surface of the convex portion 46a and the bottom surface of the buffer chamber 38 have a second gap (d2 in Figures 3 and 4).

[0049] The second interval d2 is less than or equal to the first interval d1. For example, the second interval d2 is between 0.2 mm and 2 mm.

[0050] As shown in Figure 3, the purge gas introduction section 40 is provided on the side of the buffer chamber 38. The purge gas introduction section 40 connects the outside of the head section 30 to the buffer chamber 38. The purge gas introduction section 40 is, for example, a hole that penetrates the head section 30.

[0051] As shown in Figure 3, the third distance (d3 in Figure 3) between the purge gas inlet 40 and the bottom surface of the buffer chamber 38 in the extending direction of the purge gas supply section 42 is greater than the second distance (d2 in Figure 3) between the bottom surface of the convex portion 46a and the bottom surface of the buffer chamber 38. Also, as shown in Figure 6, the purge gas inlet 40 faces, for example, the side surface of the convex portion 46a.

[0052] As shown in Figures 3 and 7, the multiple purge gas supply units 42 include a first purge gas supply unit 42a, a second purge gas supply unit 42b, and a third purge gas supply unit 42c. In this embodiment, the case of three multiple purge gas supply units 42 is described as an example, but there may be two or four or more multiple purge gas supply units 42.

[0053] The first purge gas supply unit 42a, the second purge gas supply unit 42b, and the third purge gas supply unit 42c extend from the bottom surface of the buffer chamber 38 into the interior of the chamber 10. In other words, one end of the first purge gas supply unit 42a, the second purge gas supply unit 42b, and the third purge gas supply unit 42c is at the bottom surface of the buffer chamber 38, and the other end is at the bottom surface of the head unit 30.

[0054] As shown in Figure 7, in a cross-section perpendicular to the extension direction of the purge gas supply unit 42, the shape of the purge gas supply unit 42 is, for example, circular. However, the shape of the purge gas supply unit 42 in the above cross-section is not limited to circular, and may be, for example, elliptical or polygonal.

[0055] The second distance (d2 in Figures 3 and 4) between the bottom surface of the protruding portion 46a and the bottom surface of the buffer chamber 38 is smaller than, for example, the maximum opening width of the purge gas supply unit 42 (d4 in Figures 3, 4, and 7). Also, the first distance (d1 in Figures 3 and 4) between the side surface of the protruding portion 46a and the side surface of the buffer chamber 38 is smaller than, for example, the maximum opening width of the purge gas supply unit 42 (d4 in Figures 3 and 7). The maximum opening width d4 of the purge gas supply unit 42 is, for example, 10 mm or more and 50 mm or less.

[0056] The maximum opening width d4 of the purge gas supply unit 42 is defined as the maximum distance between any two points on the circumference of the purge gas supply unit 42 in a cross-section perpendicular to the extension direction of the purge gas supply unit 42. For example, if the shape of the purge gas supply unit 42 in the above cross-section is circular, as in the embodiment, the maximum opening width d4 of the purge gas supply unit 42 is the diameter of the circle.

[0057] The bottom surface of the protruding portion 46a faces the entire area of ​​the openings of the multiple purge gas supply units 42 and the direction of extension of the purge gas supply units 42.

[0058] Figure 8 is a schematic diagram showing the shape of the gas discharge section of the embodiment projected onto the bottom surface of the translucent member. As shown in Figure 8, when the shape of the purge gas supply section 42 is projected at equal scale onto the bottom surface of the translucent window 46 in the extending direction of the purge gas supply section 42, the projected shape of the purge gas supply section 42 is contained within the bottom surface of the translucent window 46. The shapes of the first purge gas supply section 42a, the second purge gas supply section 42b, and the third purge gas supply section 42c projected onto the bottom surface of the translucent window 46 in the extending direction of the purge gas supply section 42 are projected shape 42ax, projected shape 42bx, and projected shape 42cx, respectively.

[0059] Projection shapes 42ax, 42bx, and 42cx are all contained within the bottom surface of the translucent window 46. In other words, projection shapes 42ax, 42bx, and 42cx are all located inside the outer periphery of the bottom surface of the translucent window 46.

[0060] As shown in Figure 8, the distance between the projected shapes 42ax, 42bx, and 42cx and the outer circumference of the bottom surface of the translucent window 46 is the fifth distance d5 or the sixth distance d6. As shown in Figures 3 and 4, the distance between the convex portion 46a and the purge gas supply unit 42 in a direction perpendicular to the extension direction of the purge gas supply unit 42 is also the fifth distance d5 or the sixth distance d6. The fifth distance d5 and the sixth distance d6 are, for example, greater than the second interval d2.

[0061] Next, an example of a vapor phase growth method using the vapor phase growth apparatus 100 of the embodiment will be described. The following description will focus on the case where a single-crystal silicon carbide film, doped with nitrogen as an n-type impurity, is formed on the surface of a single-crystal silicon carbide wafer W. Furthermore, the description will also focus on the case where the surface temperature of the wafer W is measured using a viewing port 44 and measuring instruments provided outside the chamber 10.

[0062] Figure 9 is an explanatory diagram of the vapor phase growth method according to an embodiment. A measuring instrument 54 is provided above the viewing port 44. The measuring instrument 54 is, for example, a pyrometer capable of measuring the surface temperature of the wafer W.

[0063] First, wafer W is placed on holder 12. Wafer W is a single-crystal silicon carbide wafer.

[0064] Next, the wafer W is rotated by a rotational drive mechanism (not shown). Then, the wafer W is heated by the lower heater 16 and the upper heater 18.

[0065] Next, as shown in Figure 9, process gas G1 is supplied into the chamber 10 from multiple process gas supply units 36.

[0066] Process gas G1 is a mixed gas containing, for example, a silicon source gas, a carbon source gas, an n-type impurity dopant gas, an assist gas, and a carrier gas. The silicon source gas is, for example, silane gas (SiH4). The carbon source gas is, for example, propane gas (C3H8). The n-type impurity dopant gas is, for example, nitrogen gas (N2). The assist gas is, for example, hydrogen chloride gas (HCl). The carrier gas is, for example, argon gas (Ar) or hydrogen gas (H2).

[0067] The decomposition and reaction of process gas G1 form a single-crystal silicon carbide film on the surface of wafer W, doped with nitrogen as an n-type impurity.

[0068] For example, simultaneously with the supply of process gas G1 into the chamber 10, purge gas G2 is introduced into the buffer chamber 38 from the purge gas inlet 40. The purge gas G2 introduced into the buffer chamber 38 is supplied from the buffer chamber 38 to the chamber 10 through multiple purge gas supply units 42.

[0069] By flowing purge gas G2 from the buffer chamber 38 into the chamber 10, the inflow of process gas G1 into the buffer chamber 38 is suppressed. Furthermore, by flowing purge gas G2 from the buffer chamber 38 into the chamber 10, turbulence in the process gas G1 inside the chamber 10 is suppressed. The purge gas G2 is, for example, hydrogen gas or argon gas.

[0070] For example, during the formation of the silicon carbide film, the surface temperature of the wafer W is measured by receiving light passing through the purge gas supply unit 42 and the translucent window 46 with the measuring instrument 54. The surface temperature of the wafer W is measured using the viewing port 44 and the measuring instrument 54. By providing three purge gas supply units 42, it is possible to simultaneously measure the temperature at three locations, for example, the center of the wafer W, the outer edge of the wafer W, and the area between the center and outer edge of the wafer W.

[0071] As shown in Figure 9, during the formation of the silicon carbide film, exhaust gas G3 is discharged from the gas exhaust port 52 to the outside of the chamber 10. The exhaust gas G3 includes, for example, unreacted process gas G1 and purge gas G2.

[0072] After forming a single-crystal silicon carbide film, for example, the supply of process gas G1 into the chamber 10 and the supply of purge gas G2 to the buffer chamber 38 are stopped. Heating by the lower heater 16 and upper heater 18 is also stopped to lower the temperature of the wafer W. Subsequently, the wafer W is removed from the chamber 10.

[0073] Next, the operation and effects of the vapor phase growth apparatus 100 of this embodiment will be described.

[0074] Figure 10 is a schematic cross-sectional view of a comparative example substrate processing apparatus. Figure 11 is an enlarged schematic view of a part of the comparative example substrate processing apparatus. Figure 10 corresponds to Figure 1 of the embodiment. Figure 11 corresponds to Figure 3 of the embodiment.

[0075] The substrate processing apparatus in the comparative example is a vapor phase growth apparatus 900. As shown in Figures 10 and 11, The comparative example vapor phase growth apparatus 900 differs from the embodiment vapor phase growth apparatus 100 in that the translucent window 46 does not have a convex portion 46a. The translucent window 46 of the comparative example is flat.

[0076] Figure 12 is an explanatory diagram of the problems with the comparative example substrate processing apparatus. Figure 12 corresponds to Figure 11. Figure 12 shows the flow of purge gas G2 or process gas G1 when forming a film using the vapor phase growth apparatus 900.

[0077] As shown in Figure 12, the purge gas G2 introduced horizontally from the purge gas inlet 40 into the buffer chamber 38 has a high horizontal flow velocity. As a result, the flow rate of purge gas G2 flowing to the first purge gas supply unit 42a, which is furthest from the purge gas inlet 40, is high. Conversely, the flow rate of purge gas G2 flowing to the third purge gas supply unit 42c, which is closest to the purge gas inlet 40, is low.

[0078] Because the flow rate of purge gas G2 through the first purge gas supply unit 42a is high and the flow rate of purge gas G2 through the third purge gas supply unit 42c is low, there is a risk that purge gas G2 and process gas G1 may flow back from the third purge gas supply unit 42c into the buffer chamber 38.

[0079] When process gas G1 containing the source gas flows into the buffer chamber 38, the process gas G1 may decompose or react within the buffer chamber 38, potentially causing by-products 56 to adhere to the lower surface of the translucent window 46. Adhesion of by-products 56 to the translucent window 46 alters its light transmittance. A change in the light transmittance of the translucent window 46 is undesirable because it reduces the accuracy of optical measurements. In Figure 12, the by-products 56 are adhering to the translucent window 46 at positions in the extension direction of the first purge gas supply section 42a, the second purge gas supply section 42b, and the third purge gas supply section 42c. However, they may also adhere to any of the positions in the extension direction of the first purge gas supply section 42a, the second purge gas supply section 42b, and the third purge gas supply section 42c.

[0080] The difference in flow rates of purge gas G2 flowing to the first purge gas supply section 42a, the second purge gas supply section 42b, and the third purge gas supply section 42c is thought to be due to the large combined conductance from the purge gas introduction section 40 to the inside of the chamber 10. Therefore, the backflow of purge gas G2 and process gas G1 from the third purge gas supply section 42c to the buffer chamber 38 is thought to be due to the large combined conductance from the purge gas introduction section 40 to the inside of the chamber 10.

[0081] Figures 13 and 14 are explanatory diagrams illustrating the operation and effects of the substrate processing apparatus of the embodiment. Figure 13 corresponds to Figure 6. Figure 14 corresponds to Figure 3. Figures 13 and 14 show the flow of purge gas G2 when forming a film using the vapor phase growth apparatus 100.

[0082] As shown in Figures 13 and 14, the purge gas G2 supplied horizontally from the purge gas inlet 40 to the buffer chamber 38 flows to the purge gas supply unit 42 through the gap between the convex portion 46a of the translucent window 46 and the buffer chamber 38. The presence of the convex portion 46a reduces the flow velocity of the purge gas G2 compared to the comparative example. This is because the presence of the convex portion 46a reduces the combined conductance from the purge gas inlet 40 to the inside of the chamber 10 compared to the comparative example.

[0083] By reducing the combined conductance from the purge gas inlet 40 to the inside of the chamber 10, the flow rates of purge gas G2 flowing to the first purge gas supply section 42a, the second purge gas supply section 42b, and the third purge gas supply section 42c are more easily equalized compared to the comparative example. In particular, by making the second gap d2 between the bottom surface of the convex portion 46a and the bottom surface of the buffer chamber 38 less than or equal to the first gap d1 between the side surface of the convex portion 46a and the side surface of the buffer chamber 38, the flow rate of purge gas G2 in the first purge gas supply section 42a, which is furthest from the purge gas inlet 40, and the flow rate of purge gas G2 in the third purge gas supply section 42c, which is closest to the purge gas inlet 40, can be equalized.

[0084] Therefore, backflow of purge gas G2 and process gas G1 from the purge gas supply unit 42 into the buffer chamber 38 can be suppressed. As a result, adhesion of by-products 56 to the translucent window 46 is suppressed, and a decrease in the accuracy of optical measurements can be suppressed.

[0085] From the viewpoint of suppressing backflow of purge gas G2 and process gas G1 into the buffer chamber 38, it is preferable that the second distance d2 between the bottom surface of the convex portion 46a and the bottom surface of the buffer chamber 38 is smaller than the first distance d1 between the side surface of the convex portion 46a and the side surface of the buffer chamber 38. This reduces the conductance between the bottom surface of the convex portion 46a and the bottom surface of the buffer chamber 38, making it easier to equalize the flow rate of purge gas G2 flowing to the multiple purge gas supply units 42.

[0086] From the viewpoint of suppressing backflow of purge gas G2 and process gas G1 into the buffer chamber 38, the second distance d2 between the bottom surface of the protruding portion 46a and the bottom surface of the buffer chamber 38 is preferably 2 mm or less, and more preferably 1 mm or less. This reduces the conductance between the bottom surface of the protruding portion 46a and the bottom surface of the buffer chamber 38, making it easier to equalize the flow rate of purge gas G2 flowing to the multiple purge gas supply units 42.

[0087] From the viewpoint of suppressing backflow of purge gas G2 and process gas G1 into the buffer chamber 38, it is preferable that the second distance d2 between the bottom surface of the protruding portion 46a and the bottom surface of the buffer chamber 38 is smaller than the maximum opening width d4 of the purge gas supply unit 42. This reduces the conductance between the bottom surface of the protruding portion 46a and the bottom surface of the buffer chamber 38, making it easier to equalize the flow rate of purge gas G2 flowing to the multiple purge gas supply units 42.

[0088] From the viewpoint of suppressing backflow of purge gas G2 and process gas G1 into the buffer chamber 38, it is preferable that the bottom surface of the convex portion 46a faces the entire area of ​​the openings of the multiple purge gas supply units 42 and the direction of extension of the purge gas supply units 42. Also, from the viewpoint of suppressing backflow of purge gas G2 and process gas G1 into the buffer chamber 38, it is preferable that when the shapes of the multiple purge gas supply units 42 are projected at equal scale onto the bottom surface of the convex portion 46a in the direction of extension of the multiple purge gas supply units 42, the projected shape is contained within the bottom surface of the convex portion 46a. This reduces the conductance between the bottom surface of the convex portion 46a and the bottom surface of the buffer chamber 38, making it easier to equalize the flow rate of purge gas G2 flowing into the multiple purge gas supply units 42.

[0089] From the viewpoint of suppressing backflow of purge gas G2 and process gas G1 into the buffer chamber 38, when the shapes of the multiple purge gas supply units 42 are projected at equal scale onto the bottom surface of the convex portion 46a in the extending direction of the multiple purge gas supply units 42, it is preferable that the fifth distance d5 and the sixth distance d6 between the projected shape and the outer circumference of the bottom surface of the convex portion 46a are greater than the second distance d2 between the bottom surface of the convex portion 46a and the bottom surface of the buffer chamber 38. This reduces the conductance between the bottom surface of the convex portion 46a and the bottom surface of the buffer chamber 38, making it easier to equalize the flow rate of purge gas G2 flowing to the multiple purge gas supply units 42.

[0090] From the viewpoint of suppressing backflow of purge gas G2 and process gas G1 into the buffer chamber 38, it is preferable that the third distance d3 between the purge gas introduction section 40 and the bottom surface of the buffer chamber 38 in the extending direction of the purge gas supply section 42 is larger than the second distance d2 between the bottom surface of the convex portion 46a and the bottom surface of the buffer chamber 38. This reduces the conductance between the purge gas introduction section 40 and the third purge gas supply section 42c closest to the purge gas introduction section 40, making it easier to equalize the flow rate of purge gas G2 flowing to the multiple purge gas supply sections 42.

[0091] Figure 15 is an enlarged schematic diagram of a part of the substrate processing apparatus of the first modified embodiment. Figure 15 corresponds to Figure 3 of the embodiment. Figure 16 is a schematic diagram of the gas discharge section of the first modified embodiment projected onto the bottom surface of the translucent member. Figure 16 corresponds to Figure 8 of the embodiment.

[0092] The first modified vapor phase growth apparatus differs from the embodiment in that, as shown in Figure 15, the bottom surface of the convex portion 46a does not face a part of the opening of the purge gas supply section 42. Furthermore, as shown in Figure 16, the first modified vapor phase growth apparatus differs from the embodiment in that, when the shape of the purge gas supply section 42 is projected at equal scale onto the bottom surface of the translucent window 46 in the extending direction of the purge gas supply section 42, a part of the projected shape of the purge gas supply section 42 is not included on the bottom surface of the translucent window 46.

[0093] In the first modified gas phase growth apparatus, compared to the comparative example gas phase growth apparatus 900, the flow rate of purge gas G2 flowing to the multiple purge gas supply units 42 is more easily equalized.

[0094] Figure 17 is an enlarged schematic diagram of a part of the substrate processing apparatus of a second modified embodiment. Figure 17 corresponds to Figure 6 of the embodiment.

[0095] The second modified vapor phase growth apparatus differs from the embodiment's vapor phase growth apparatus 100 in that, as shown in Figure 17, the purge gas introduction section 40 does not face the side surface of the convex portion 46a.

[0096] In the second modified vapor phase growth apparatus, compared to the comparative example vapor phase growth apparatus 900, the flow rate of purge gas G2 flowing to the multiple purge gas supply units 42 is more easily equalized.

[0097] The embodiments of the present invention have been described above with reference to specific examples. The above embodiments are merely given as examples and do not limit the present invention. Furthermore, the components of each embodiment may be combined as appropriate.

[0098] In the embodiments described, the case of forming a single-crystal silicon carbide film was used as an example, but the present invention can also be applied to vapor phase growth apparatuses that form films other than single-crystal silicon carbide films.

[0099] Furthermore, although a single-crystal silicon carbide wafer was described as an example of a substrate in the embodiment, the substrate is not limited to a single-crystal silicon carbide wafer.

[0100] Furthermore, although a vapor phase growth apparatus was described as an example of a substrate processing apparatus in the embodiments, the substrate processing apparatus is not limited to a vapor phase growth apparatus. For example, the present invention can be applied to any substrate processing apparatus that includes a chamber and performs optical measurements during substrate processing. The substrate processing apparatus may also be, for example, a heat processing apparatus that heats the substrate.

[0101] In the embodiments, descriptions of parts not directly necessary for describing the present invention, such as the apparatus configuration, manufacturing method, and optical measurement method, have been omitted. However, the necessary apparatus configuration, manufacturing method, optical measurement method, etc., can be appropriately selected and used. Furthermore, all substrate processing apparatuses that possess elements of the present invention and can be appropriately modified by those skilled in the art are included within the scope of the present invention. The scope of the present invention is defined by the claims and the scope of equivalents thereof. [Explanation of Symbols]

[0102] 10 Chambers 12 holders 30 Head section 38 Buffer chamber (recess) 40. Purge gas inlet (gas inlet) 42. Purge Gas Supply Unit (Gas Supply Unit) 46 Translucent window (translucent member) 46a Convex part (part) 54 Measuring instruments 100 Vapor-phase growth apparatus (substrate processing apparatus) W wafer (substrate) G2 Purge gas (gas) d1 First interval d2 2nd interval d3 Third interval d4 Maximum opening width

Claims

1. A chamber having a head section at the top, in which wafer processing takes place, A recess provided on the upper surface of the head portion, A translucent member including a portion surrounded by the aforementioned recess, wherein the first distance between the side surface of the portion and the side surface of the recess is greater than the second distance between the bottom surface of the portion and the bottom surface of the recess, A gas introduction section is provided in the head portion and introduces gas between the side surface of the recess and the side surface of the portion, A plurality of gas supply units are provided in the head portion, which connect the recess and the chamber and supply the gas to the inside of the chamber, A substrate processing apparatus equipped with the following:

2. The substrate processing apparatus according to claim 1, wherein the bottom surface of the aforementioned portion faces the entire area of ​​the openings of the plurality of gas supply units.

3. The substrate processing apparatus according to claim 1 or claim 2, wherein the second interval is smaller than the maximum opening width of the plurality of gas supply units.

4. The substrate processing apparatus according to claim 1 or claim 2, further comprising a measuring instrument provided above the light-transmitting member.

5. The substrate processing apparatus according to claim 1 or claim 2, wherein the light-transmitting member further includes a flange, and the flange is placed on the end of the recess.

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