Information processing system, power adjustment method, and heat treatment apparatus

Abstract

To provide a technique for reducing an influence of an accumulation film attached to the inside of a processing container using a simulation model.SOLUTION: An information processing system, which has a heat treatment device for forming a film in a substrate to be processed using a heating part for heating the substrate to be processed in a processing container, and an information processor for controlling power supplied to the heating part, includes: a prediction part which is configured to predict an influence on the temperature of the substrate to be processed of an accumulation film attached to the inside of the processing container using a simulation model of the heat treatment device; and an adjustment part which is configured to adjust power supplied to the heating part according to the predicted influence on the temperature of the substrate to be processed of the accumulation film attached to the inside of the processing container.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] The present disclosure relates to an information processing system, a power adjustment method, and a heat treatment apparatus.

Background Art

[0002] For example, a heat treatment apparatus supplies gas into a process tube containing a wafer and performs a predetermined heat treatment on the wafer by heating with a heater. In order to perform a uniform heat treatment on the wafers in the process tube, a conventional heat treatment apparatus has provided temperature sensors at a plurality of predetermined locations in the process tube and controls the heating by the heater using the measured temperatures.

[0003] Conventionally, a technique for visualizing process states such as the temperature state of a semiconductor manufacturing apparatus during the execution of a process in a semiconductor manufacturing apparatus is known (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] The present disclosure provides a technique for reducing the influence of a deposited film attached to a processing container using a simulation model.

Means for Solving the Problems

[0006] One aspect of the present disclosure is an information processing system comprising: a heat processing apparatus for performing film deposition on a substrate to be processed using a heating unit that heats the substrate in a processing container; and an information processing apparatus for controlling the power supplied to the heating unit, the system comprising: a prediction unit configured to predict the effect of the accumulated film deposited in the processing container on the temperature of the substrate to be processed using a simulation model of the heat processing apparatus; and an adjustment unit configured to adjust the power supplied to the heating unit according to the predicted effect of the accumulated film deposited in the processing container on the temperature of the substrate to be processed. Furthermore, the prediction unit is configured to output a predicted temperature inside the processing container according to the power supplied to the heating unit, using a simulation model of the heat treatment apparatus, and the adjustment unit is configured to adjust the power supplied to the heating unit based on the difference between the measured temperature inside the processing container and the predicted temperature inside the processing container. do. [Effects of the Invention]

[0007] According to this disclosure, the effect of accumulated film inside the processing vessel can be reduced using a simulation model. [Brief explanation of the drawing]

[0008] [Figure 1] This is a schematic longitudinal cross-sectional view showing the heat treatment apparatus according to this embodiment. [Figure 2] This is a cross-sectional view showing the general configuration of a heat treatment furnace. [Figure 3] This is an example diagram illustrating the effect of accumulated film inside the processing container. [Figure 4] This diagram illustrates an example of a process to reduce the effects of accumulated film inside a tube. [Figure 5] This is a functional configuration diagram of an example of the control unit of the heat treatment apparatus according to this embodiment. [Figure 6] This is a flowchart showing an example of the processing procedure of the control unit according to this embodiment. [Figure 7] This is a functional configuration diagram of an example of the control unit of the heat treatment apparatus according to this embodiment. [Figure 8] This is an example diagram illustrating the transmittance of a cumulative film. [Figure 9] This is a flowchart showing an example of the processing procedure of the control unit according to this embodiment. [Figure 10] This is a functional configuration diagram of an example of the control unit of the heat treatment apparatus according to this embodiment. [Figure 11] This is a flowchart of an example of the processing procedure of the control unit according to the present embodiment. [Figure 12] This is a functional configuration diagram of an example of the control unit of the heat treatment apparatus according to the present embodiment. [Figure 13] This is a flowchart of an example of the processing procedure of the control unit according to the present embodiment. [Figure 14] This is a configuration diagram of an example of the information processing system according to the present embodiment. [Figure 15] This is a hardware configuration diagram of an example of a computer. [Figure 16] This is a diagram for explaining an example of the end point detection, time reduction, and reduction of consumption gas in dry cleaning. [Figure 17] This is a diagram for explaining an example of the end point detection in dry cleaning according to the present embodiment.

Mode for Carrying Out the Invention

[0009] Hereinafter, with reference to the drawings, the mode for carrying out the present invention will be described.

[0010] FIG. 1 is a longitudinal sectional view schematically showing a heat treatment apparatus according to the present embodiment. The heat treatment apparatus 10 includes a vertical heat treatment furnace 60, holds and accommodates wafers W at predetermined intervals along the vertical direction in a boat, and can perform various heat treatments such as oxidation, diffusion, and reduced pressure CVD on the wafers W. Hereinafter, an example of heat-treating the surface of the wafer W installed in the processing container 65 by supplying gas into the processing container 65 will be described. The wafer W is an example of a substrate to be processed. The substrate to be processed is not limited to a circular wafer W.

[0011] The heat treatment apparatus 10 in FIG. 1 has a mounting table (load port) 20, a housing 30, and a control unit 100. The mounting table (load port) 20 is provided at the front of the housing 30. The housing 30 has a loading area (working area) 40 and a heat treatment furnace 60.

[0012] The loading area 40 is provided below in the housing 30. The heat treatment furnace 60 is within the housing 30 and is provided above the loading area 40. Also, a base plate 31 is provided between the loading area 40 and the heat treatment furnace 60.

[0013] The mounting table (load port) 20 is for loading and unloading the wafer W into and out of the housing 30. Storage containers 21 and 22 are placed on the mounting table (load port) 20. The storage containers 21 and 22 are sealed storage containers (hoops) that can detachably have lids (not shown) on the front and can store a plurality of (for example, about 25) wafers W at predetermined intervals.

[0014] Also, below the mounting table 20, an aligning device (aligner) 23 for aligning a notch (for example, a notch) provided on the outer periphery of the wafer W transferred by the transfer mechanism 47 in one direction may be provided.

[0015] The loading area (working area) 40 is for transferring the wafer W between the storage containers 21 and 22 and the boat 44, loading the boat 44 into the processing container 65, and unloading the boat 44 from the processing container 65. The loading area 40 is provided with a door mechanism 41, a shutter mechanism 42, a lid body 43, a boat 44, a base 45a, a base 45b, the elevating mechanism 46 shown in FIG. 2, and a transfer mechanism 47.

[0016] The door mechanism 41 is for removing the lids of the storage containers 21 and 22 and communicating and opening the interiors of the storage containers 21 and 22 into the loading area 40. The shutter mechanism 42 is provided above the loading area 40. The shutter mechanism 42 is provided to cover (or block) the furnace opening 68a in order to suppress or prevent the heat in the high-temperature furnace from being released from the furnace opening 68a into the loading area 40 when the lid body 43 is open.

[0017] The lid 43 has an insulating tube 48 and a rotating mechanism 49. The insulating tube 48 is provided on the lid 43. The insulating tube 48 is for keeping the boat 44 warm by preventing it from being cooled by heat transfer with the lid 43. The rotating mechanism 49 is attached to the bottom of the lid 43. The rotating mechanism 49 is for rotating the boat 44. The rotating shaft of the rotating mechanism 49 is airtightly penetrated through the lid 43 and is provided to rotate a turntable placed on the lid 43.

[0018] The lifting mechanism 46 drives the lid 43 up and down when loading and unloading the boat 44 from the loading area 40 to the processing container 65. When the lid 43 is raised by the lifting mechanism 46 and loaded into the processing container 65, the lid 43 is positioned to abut against the furnace opening 68a and seal the opening 68a.

[0019] The boat 44, placed on the lid 43, can hold the wafer W in a rotatable manner in the horizontal plane within the processing container 65. The heat treatment apparatus 10 may have multiple boats 44. Boats 44a and 44b are provided in the loading area 40.

[0020] The loading area 40 is provided with a base 45a, a base 45b, and a boat transport mechanism. Bases 45a and 45b are platforms on which boats 44a and 44b are transferred from the cover 43, respectively. The boat transport mechanism is for transferring boat 44a or 44b from the cover 43 to base 45a or 45b.

[0021] Boats 44a and 44b are made of, for example, quartz, and are designed to mount large-diameter wafers W, for example, 300 mm in diameter, horizontally at predetermined intervals (pitch width) in the vertical direction. Boats 44a and 44b are provided with multiple (for example, three) support columns between the top plate and the bottom plate. The support columns are provided with claws for holding the wafers W. In addition, boats 44a and 44b may be provided with auxiliary columns as appropriate in addition to the support columns.

[0022] The transfer mechanism 47 is for transferring wafers W between the storage container 21 or 22 and the boat 44a or 44b. The transfer mechanism 47 has a base 57, a lifting arm 58, and a plurality of forks (transfer plates) 59. The base 57 is provided so as to be able to move up and down and to rotate. The lifting arm 58 is provided so as to be able to move up and down by a ball screw or the like. The base 57 is provided so as to be able to rotate horizontally on the lifting arm 58.

[0023] Figure 2 is a cross-sectional view showing a schematic configuration of a heat treatment furnace. The heat treatment furnace 60 in Figure 2 is an example of a vertical furnace for housing multiple thin, disc-shaped wafers W and performing a predetermined heat treatment. The heat treatment furnace 60 comprises a jacket 62, a heater 63, a space 64, and a processing vessel 65.

[0024] The processing vessel 65 is for housing and heat-treating the wafers W held in the boat 44. The processing vessel 65 is made of, for example, quartz and has an elongated shape. The processing vessel 65 is supported on a base plate 66 via a manifold 68 at the bottom. Gas is supplied from the manifold 68 to the processing vessel 65 through an injector 71. The injector 71 supplies gas into the processing vessel 65 from its outlet (hole). The injector 71 is connected to a gas supply source 72. The gas supplied to the processing vessel 65 is exhausted through an exhaust port 73 via an exhaust system 74 equipped with a vacuum pump capable of pressure reduction control.

[0025] The lid 43 closes the furnace opening 68a at the bottom of the manifold 68 when the boat 44 is being loaded into the processing container 65. The lid 43 is provided to be movable up and down by a lifting mechanism 46. A heat-insulating cylinder 48 is placed on top of the lid 43. A boat 44 is provided on top of the heat-insulating cylinder 48, on which a number of wafers W are mounted vertically at predetermined intervals.

[0026] The jacket 62 is provided to cover the perimeter of the processing container 65 and to define a space 64 around the processing container 65. Like the processing container 65, the jacket 62 has a cylindrical shape. The jacket 62 is supported by a base plate 66. An insulating material 62a, for example made of glass wool, may be provided on the inside of the jacket 62 and on the outside of the space 64.

[0027] The heater 63 is provided so as to surround the processing container 65. For example, the heater 63 is provided inside the jacket 62 and outside the space 64. The heater 63 heats the processing container 65 and also heats the wafer W held in the boat 44, i.e., the wafer W inside the processing container 65. The heater 63 functions as a heating unit that heats the wafer W.

[0028] Furthermore, the heater 63 includes a heat-generating resistor such as a carbon wire, and can control the temperature of the gas flowing inside the space 64, as well as heat the inside of the processing container 65 to a predetermined temperature (for example, 50 to 1200°C).

[0029] The space 64 and the space within the processing container 65 are divided vertically into multiple unit regions, for example, 10 unit regions A1, A2, A3, A4, A5, A6, A7, A8, A9, and A10. The heater 63 is divided vertically into 63-1, 63-2, 63-3, 63-4, 63-5, 63-6, 63-7, 63-8, 63-9, and 63-10, corresponding to one of the unit regions. Each of the heaters 63-1 to 63-10 is configured to independently control heating corresponding to each of the unit regions A1 to A10 by the output (heater power) of a heater output unit 86, for example, which includes a thyristor. Heaters 63-1 to 63-10 are examples of heating elements.

[0030] Figure 2 shows an example in which the space 64 and the space within the processing container 65 are divided into 10 unit regions along the vertical direction. The number of divisions of the unit regions is not limited to 10; the space 64 and the space within the processing container 65 may be divided into a number other than 10. Also, although the divisions are even in Figure 2, this is not limited to this, and the area around the furnace opening 68a, where temperature changes are large, may be divided into smaller regions. The heaters 63 only need to be provided at different positions along the vertical direction, and do not need to be provided in a one-to-one correspondence with each of the unit regions A1 to A10.

[0031] In space 64, heater temperature sensors Ao1 to Ao10 are provided as Outer T / Cs to measure the temperature corresponding to each of the unit regions A1 to A10. In addition, processing container temperature sensors Ai1 to Ai10 are provided as Inner T / Cs in the space within the processing container 65 to measure the temperature corresponding to each of the unit regions A1 to A10. The heater temperature sensors Ao1 to Ao10 and the processing container temperature sensors Ai1 to Ai10 measure temperature in order to measure the temperature distribution along the vertical direction. The temperatures measured by the processing container temperature sensors Ai1 to Ai10 are an example of the measured temperature inside the processing container 65.

[0032] Measurement signals from heater temperature sensors Ao1 to Ao10 are input to the control unit 100 via line 81. Measurement signals from processing container temperature sensors Ai1 to Ai10 are input to the control unit 100 via line 82. Upon receiving the measurement signals, the control unit 100 controls the heater power supplied by the heater output unit 86 to heaters 63-1 to 63-10 based on the set temperature described later. The heater output unit 86 supplies heater power to each of the heaters 63-1 to 63-10 via heater output line 87 and heater terminal 88, in accordance with the control of the control unit 100.

[0033] Furthermore, the heat treatment furnace 60 may be equipped with a cooling mechanism 90 for cooling the treatment vessel 65. The cooling mechanism 90 may include, for example, a blower 91, a blower pipe 92, and an exhaust pipe 94.

[0034] The blower 91 cools the processing container 65 by blowing a cooling gas, such as air, into the space 64 where the heater 63 is located. The air supply pipe 92 sends the cooling gas from the blower 91 to the heater 63. The air supply pipe 92 is connected to each of the outlets 92a-1 to 92a-10 and supplies the cooling gas to the space 64.

[0035] The exhaust pipe 94 is for discharging air from the space 64. The space 64 is provided with an exhaust port 94a for exhausting cooling gas from the space 64. One end of the exhaust pipe 94 is connected to the exhaust port 94a.

[0036] Furthermore, as shown in Figure 2, the heat treatment furnace 60 may have a heat exchanger 95 in the middle of the exhaust pipe 94, and the other end of the exhaust pipe 94 may be connected to the suction side of the blower 91. The cooling gas exhausted by the exhaust pipe 94 may not be discharged into the factory exhaust system, but instead undergo heat exchange in the heat exchanger 95 and then be returned to the blower 91 for recirculation. In this case, the gas may be circulated via an air filter (not shown). Alternatively, the cooling gas discharged from the space 64 may be discharged from the exhaust pipe 94 through the heat exchanger 95 into the factory exhaust system.

[0037] The blower 91 may be configured to control the airflow rate of the blower 91 by controlling the power supplied from, for example, a power supply unit 91a including an inverter, based on an output signal from the control unit 100.

[0038] The control unit 100 is implemented, for example, by a computer 500, which will be described later. The control unit 100 reads a program recorded in a storage device and, according to that program, sends control signals to each part of the heat treatment apparatus 10 to execute the heat treatment. For example, the control unit 100 adjusts the temperature inside the treatment container 65 by controlling the heater power supplied to the heater 63 by the heater output unit 86.

[0039] In the heat treatment apparatus 10 shown in Figures 1 and 2, the cumulative film that forms inside the processing container 65 has the following effect. Figure 3 is an example diagram illustrating the effect of the cumulative film that forms inside the processing container. Note that in Figure 3, the processing container 65 is shown divided into an inner tube and an outer tube. Hereafter, the processing container 65 may be referred to as the tube. For example, when heat treatment is performed on a wafer W, the inside of the tube becomes a vacuum.

[0040] Figure 3(A) is an illustrative diagram of an example of heat exchange when there is no cumulative film attached inside the tube. Since the inside of the tube is a vacuum, the wafer W is heated by radiant heat. If there is no cumulative film attached to the quartz tube, the radiant heat is transmitted directly. When there is no cumulative film attached inside the tube, there is little heat loss, and the heat from the heater 63 reaches the wafer W directly.

[0041] Figure 3(B) is an illustrative diagram of an example of heat exchange when there is a cumulative film attached inside the tube. The silicon (Si) cumulative film is silver in color and has high reflectivity. Therefore, in a tube with a cumulative film, the heater power supplied to the heater 63 must be greater than that supplied to a tube without a cumulative film in order for the same amount of heat to reach the wafer W from the heater 63 as in a tube without a cumulative film.

[0042] In the existing heat treatment apparatus 10, the effect of accumulated film inside the tube was reduced, for example, as shown in Figure 4. Figure 4 is an example diagram illustrating a process to reduce the effect of accumulated film inside the tube. Figure 4 shows an image of reducing the effect of accumulated film inside the tube by feedback-controlling the heater power supplied to the heater 63 based on the measured temperature of the InnerT / C.

[0043] As shown in Figure 4, the existing heat treatment apparatus 10 reduces the effect of the accumulated film inside the tube by increasing the heater power based on the measured temperature of InnerT / C, which has decreased due to the effect of the accumulated film inside the tube.

[0044] However, as shown in Figure 4, the location where the InnerT / C measures temperature is closer to the heater 63 than where the wafer W is housed. Therefore, the example in Figure 4 reduces the effect of the accumulated heat film reaching the location where the InnerT / C measures temperature from the heater 63, but it does not reduce the effect of the accumulated heat film reaching the wafer W from the heater 63. Furthermore, since the accumulated film also adheres to the surface of the InnerT / C, the accuracy of the InnerT / C itself decreases as the accumulated film adheres.

[0045] Therefore, the heat treatment apparatus 10 according to this embodiment uses a simulation model of the heat treatment apparatus 10 in a state where no cumulative film is attached inside the tube, as described later, to predict the effect of the cumulative film on the heat reaching the wafer W from the heater 63, and to mitigate the effect of the cumulative film on the heat reaching the wafer W from the heater 63.

[0046] The control unit 100 of the heat treatment apparatus 10 is implemented with the functional configuration shown in Figure 5, for example. Figure 5 is a functional configuration diagram of an example of the control unit of the heat treatment apparatus according to this embodiment. Note that the functional block diagram in Figure 5 omits the illustration of components that are not necessary for the explanation of this embodiment.

[0047] The control unit 100 executes a program to implement the process parameter acquisition unit 102, the temperature sensor data acquisition unit 104, the process control unit 106, the heating control unit 108, the prediction unit 110, the temperature prediction unit 112, the simulation model 114, and the adjustment unit 116.

[0048] The process parameter acquisition unit 102 acquires process parameters for the process executed in the heat treatment apparatus 10. The process parameter acquisition unit 102 provides the acquired process parameters to the process control unit 106. The process parameters include the set temperature inside the processing vessel 65.

[0049] The temperature sensor data acquisition unit 104 acquires the measured temperature of the InnerT / C. The temperature sensor data acquisition unit 104 provides the acquired measured temperature of the InnerT / C to the process control unit 106 and the adjustment unit 116.

[0050] The process control unit 106 executes the process in the heat treatment apparatus 10 according to the process parameters provided by the process parameter acquisition unit 102. The process control unit 106 has a temperature controller. The temperature controller determines the heater power according to the set temperature and measured temperature in the provided processing vessel 65. The heating control unit 108 controls the supply of heater power from the heater output unit 86 to the heater 63 by providing a control signal for the heater power to the heater output unit 86.

[0051] Furthermore, the heating control unit 108 notifies the temperature prediction unit 112 of the prediction unit 110 of the heater power determined by the temperature controller. The temperature prediction unit 112 has a simulation model 114 of the heat treatment apparatus 10. The simulation model 114 of the heat treatment apparatus 10 is a physical model that reproduces the configuration shown in Figure 2. The simulation model 114 is a thermal model that outputs a predicted temperature of InnerT / C in the processing container 65 according to the heater power determined by the temperature controller, and can use a thermal model constructed by integrating multiple simulation methods such as 1DCAE or 3DCAE (fluid simulation). The simulation model 114 models the relationships of heat exchange and specific heat of each component.

[0052] The simulation model 114 incorporates the configuration of the heater 63, the reactor configuration of the heater 63, and the configuration around the heater 63 as physical models in 1DCAE or 3DCAE. Based on the heater power, which is an example of input data supplied to the heater 63, it can predict and output the temperature of the InnerT / C inside the processing container 65, which is an example of output data.

[0053] Thus, the simulation model 114 of this embodiment can predict the temperature measured by the InnerT / C inside the processing container 65 and output it as a predicted temperature by inputting necessary information such as heater power.

[0054] The temperature prediction unit 112 uses a simulation model 114 of the heat treatment apparatus 10 to output a predicted temperature of the InnerT / C in the processing container 65 to the adjustment unit 116, corresponding to the heater power supplied to the heater 63 of the heat treatment apparatus 10.

[0055] The adjustment unit 116 determines the difference in heater power from, for example, the table in Table 1, based on the difference between the measured temperature of the InnerT / C provided by the temperature sensor data acquisition unit 104 and the predicted temperature of the InnerT / C inside the processing container 65 provided by the temperature prediction unit 112.

[0056] [Table 1]

[0057] For example, the table in Table 1 may be set up for each unit region. Also, since the transmittance of the cumulative film changes with temperature, the table in Table 1 associates the difference between the predicted temperature and the measured temperature of InnerT / C with the difference in heater power for each temperature range.

[0058] The item "Difference between predicted and measured temperature of InnerT / C" in Table 1 represents the difference between the measured temperature of InnerT / C provided by the temperature sensor data acquisition unit 104 and the predicted temperature of InnerT / C in the processing container 65 provided by the temperature prediction unit 112. The item "Difference in heater power" in Table 1 represents the difference between the heater power supplied to the heater 63 of the heat treatment apparatus 10 and the heater power required to mitigate the effects of the accumulated film in the processing container 65. This difference is an example of the information needed to adjust the heater power to bring the wafer W temperature closer to the set temperature. The items "Amount of accumulated film thickness" and "Transmittance" in Table 1 can be obtained from experimental or physical transmission calculation formulas and are used for screen display and logging. Table 1 is a visual representation of the calculation process; approximation formulas or physical equations that produce equivalent answers may be used instead.

[0059] The adjustment unit 116 can reduce the influence of the accumulated film inside the processing container 65 by adjusting the heater power supplied from the heater output unit 86 to the heater 63 based on the determined difference in heater power. Alternatively, the adjustment unit 116 may obtain the amount of accumulated film thickness corresponding to the difference between the measured temperature of InnerT / C and the predicted temperature of InnerT / C from Table 1, and adjust the heater power determined by the temperature controller so as to reduce the influence of the obtained amount of accumulated film thickness.

[0060] Figure 6 is a flowchart of an example of the processing procedure of the control unit according to this embodiment. In step S10, the control unit 100 of the heat treatment apparatus 10 acquires the process parameters of the process to be executed in the heat treatment apparatus 10.

[0061] In step S12, the process control unit 106 of the control unit 100 executes the process in the heat treatment apparatus 10 according to the acquired process parameters and starts controlling the heater power supplied to the heater 63. As a result, the temperature inside the processing vessel 65 is adjusted according to the set temperature.

[0062] In step S14, the prediction unit 110 of the control unit 100 uses the simulation model 114 to start outputting a predicted temperature of InnerT / C in the processing container 65, corresponding to the heater power supplied to the heater 63 of the heat treatment apparatus 10.

[0063] In step S16, the adjustment unit 116 of the control unit 100 compares the measured temperature of the InnerT / C provided by the temperature sensor data acquisition unit 104 with the predicted temperature of the InnerT / C in the processing container 65 provided by the temperature prediction unit 112, and calculates the difference between the predicted temperature of the InnerT / C and the measured temperature.

[0064] In step S18, the adjustment unit 116 reduces the effect of the accumulated film inside the processing container 65 by adjusting the heater power supplied from the heater output unit 86 to the heater 63 based on the difference between the predicted temperature and the measured temperature of the InnerT / C.

[0065] Thus, in the heat treatment apparatus 10 with the functional configuration shown in Figure 5, the effect of the accumulated film can be determined by comparing the predicted temperature of the InnerT / C without the accumulated film with the measured temperature of the InnerT / C in the heat treatment apparatus 10, and the heater power can be adjusted to reduce the effect of the accumulated film inside the tube.

[0066] The control unit 100 of the heat treatment apparatus 10 may be implemented with the functional configuration shown in Figure 7, for example. Figure 7 is a functional configuration diagram of an example of the control unit of the heat treatment apparatus according to this embodiment. Note that the functional block diagram in Figure 7 omits the illustration of components that are not necessary for the explanation of this embodiment.

[0067] The control unit 100 executes a program to implement the process parameter acquisition unit 102, the temperature sensor data acquisition unit 104, the process control unit 106, the heating control unit 108, the prediction unit 110, and the adjustment unit 116. The prediction unit 110 includes a temperature prediction unit 112, a simulation model 114, and a virtual power output unit 120. The adjustment unit 116 includes a transmittance determination unit 122, a virtual power determination unit 124, and a power adjustment unit 126.

[0068] The process parameter acquisition unit 102 acquires process parameters for the process executed in the heat treatment apparatus 10. The process parameter acquisition unit 102 provides the acquired process parameters to the process control unit 106. The process parameters include the set temperature inside the processing vessel 65. The process parameter acquisition unit 102 also provides the set temperature inside the processing vessel 65 to the virtual power output unit 120.

[0069] The temperature sensor data acquisition unit 104 acquires the measured temperature of the InnerT / C. The temperature sensor data acquisition unit 104 provides the acquired measured temperature of the InnerT / C to the process control unit 106.

[0070] The process control unit 106 executes the process in the heat treatment apparatus 10 according to the process parameters provided by the process parameter acquisition unit 102. The process control unit 106 has a temperature controller. The temperature controller determines the heater power according to the set temperature and measured temperature in the provided processing vessel 65. The heating control unit 108 controls the supply of heater power from the heater output unit 86 to the heater 63 by providing a control signal for the heater power to the heater output unit 86.

[0071] The virtual power output unit 120 has a temperature controller (hereinafter referred to as the virtual temperature controller) similar to that of the process control unit 106. The virtual temperature controller of the virtual power output unit 120 calculates the heater power (hereinafter referred to as virtual power) to be supplied to the heater 63 according to the set temperature in the processing vessel 65 provided by the process parameter acquisition unit 102 and the predicted temperature of InnerT / C provided by the temperature prediction unit 112. The virtual power output unit 120 provides the calculated virtual power to the temperature prediction unit 112. The virtual power output unit 120 also provides the calculated virtual power to the adjustment unit 116.

[0072] The temperature prediction unit 112 has a simulation model 114 of the heat treatment apparatus 10. The simulation model 114 of the heat treatment apparatus 10 is a physical model and a thermal model that outputs a predicted temperature inside the processing container 65 according to the virtual power and the transmittance of the accumulated film. The simulation model 114 can use, for example, a 1DCAE simulation model. The simulation model 114 models the relationships of heat exchange and specific heat, among other things.

[0073] The simulation model 114 incorporates the configuration of the heater 63, the reactor configuration of the heater 63, and the configuration around the heater 63 as a 1DCAE or 3DCAE physical model, thereby predicting and outputting the temperature of the InnerT / C inside the processing container 65 and the temperature of the wafer W, which are examples of output data, based on the heater power, which is an example of input data supplied to the heater 63.

[0074] The simulation model 114 in Figure 7 can output the predicted temperature of the InnerT / C in the processing container 65 and the predicted temperature of the wafer W when virtual power is input. The temperature prediction unit 112 uses the simulation model 114 of the heat treatment apparatus 10 to predict the predicted temperature of the InnerT / C in the processing container 65 according to the virtual power and outputs (feeds back) the predicted temperature of the InnerT / C to the virtual power output unit 120. The temperature prediction unit 112 also predicts the predicted temperature of the wafer W in the processing container 65 according to the virtual power and outputs the predicted temperature of the wafer W to the adjustment unit 116.

[0075] Furthermore, the heating control unit 108 notifies the adjustment unit 116 of the heater power determined by the temperature controller. The transmittance determination unit 122 of the adjustment unit 116 compares the heater power notified by the heating control unit 108 with the virtual power provided by the virtual power output unit 120 and calculates the difference in heater power. Based on the calculated difference in heater power, the transmittance determination unit 122 determines the transmittance of the cumulative film from, for example, the table in Table 2.

[0076] [Table 2]

[0077] For example, the table in Table 2 may be set for each unit region. Also, since the transmittance of the cumulative film changes with temperature, the table in Table 2 correlates the difference in heater power with the transmittance of the cumulative film for each temperature range.

[0078] The "Heater Power Difference" column in Table 2 represents the difference between the heater power determined by the temperature controller and the virtual power determined by the virtual temperature controller. The "Cumulative Film Thickness" and "Transmittance" columns in Table 2 can be determined from the experimental results.

[0079] Figure 8 is an example diagram illustrating the transmittance of the cumulative film. As shown in Figure 8, the transmittance of the cumulative film is the percentage of heat from the heater 63 that passes through the cumulative film. In Figure 8, it is shown that of the incident heat from the heater 63, t% is transmitted through the cumulative film, p% is reflected by the cumulative film, and a% is absorbed by the cumulative film. In Figure 8, the transmittance of the cumulative film is t%.

[0080] Returning to Figure 7, the virtual power determination unit 124 applies the cumulative film transmittance determined by the transmittance determination unit 122 to the simulation model 114 and adjusts the virtual power output by the virtual power output unit 120 so that the predicted temperature of the wafer W approaches the set temperature.

[0081] The power adjustment unit 126 can reduce the effect of the accumulated film inside the processing container 65 by applying the virtual power adjusted by the virtual power determination unit 124 as the heater power supplied from the heater output unit 86 to the heater 63.

[0082] Figure 9 is a flowchart of an example of the processing procedure of the control unit according to this embodiment. In step S30, the control unit 100 of the heat treatment apparatus 10 acquires the process parameters of the process to be executed in the heat treatment apparatus 10.

[0083] In step S32, the process control unit 106 of the control unit 100 executes the process in the heat treatment apparatus 10 according to the acquired process parameters and starts controlling the heater power supplied to the heater 63. As a result, the temperature inside the processing vessel 65 is adjusted according to the set temperature.

[0084] In step S34, the prediction unit 110 of the control unit 100 starts predicting virtual power using the virtual temperature controller and the simulation model 114. For example, the virtual temperature controller of the virtual power output unit 120 determines the virtual power according to the set temperature in the processing vessel 65 and the predicted temperature of InnerT / C provided by the temperature prediction unit 112. The temperature prediction unit 112 uses the simulation model 114 of the heat treatment apparatus 10 to predict the predicted temperature of InnerT / C according to the virtual power and feeds it back to the virtual power output unit 120.

[0085] In step S36, the adjustment unit 116 of the control unit 100 determines the transmittance of the cumulative film from the difference between the heater power notified by the heating control unit 108 and the virtual power notified by the virtual power output unit 120. In step S38, the adjustment unit 116 applies the determined transmittance of the cumulative film to the simulation model 114.

[0086] Furthermore, in step S40, the adjustment unit 116 uses a simulation model 114 to which the determined transmittance of the accumulated film is applied to determine a virtual power that brings the predicted temperature of the wafer W closer to the set temperature. In step S42, the adjustment unit 116 applies the determined virtual power as the heater power supplied from the heater output unit 86 to the heater 63, thereby reducing the influence of the accumulated film inside the processing container 65.

[0087] Thus, in the heat treatment apparatus 10 with the functional configuration shown in Figure 7, the transmittance of the accumulated film is determined by comparing the heater power supplied to the heater 63 with the virtual power predicted by the prediction unit 110. By predicting the temperature of the wafer W using a simulation model 114 to which the transmittance is applied, the heater power can be adjusted to reduce the influence of the accumulated film attached inside the tube.

[0088] The control unit 100 of the heat treatment apparatus 10 may be implemented with the functional configuration shown in Figure 10, for example. Figure 10 is a functional configuration diagram of an example of the control unit of the heat treatment apparatus according to this embodiment. Note that the functional block diagram in Figure 10 omits the illustration of components that are not necessary for the explanation of this embodiment. Also, the functional block diagram in Figure 10 is similar to the functional block diagram in Figure 7, with some exceptions, and explanations are omitted as appropriate.

[0089] The control unit 100 executes a program to implement the process parameter acquisition unit 102, the temperature sensor data acquisition unit 104, the process control unit 106, the heating control unit 108, the prediction unit 110, and the adjustment unit 116. The prediction unit 110 includes a temperature prediction unit 112, a simulation model 114, and a virtual power output unit 120. The adjustment unit 116 also includes a power adjustment unit 126.

[0090] The process parameter acquisition unit 102, temperature sensor data acquisition unit 104, process control unit 106, and heating control unit 108 are the same as those in the functional block diagram of Figure 7. Furthermore, the temperature prediction unit 112, simulation model 114, and virtual power output unit 120 of the prediction unit 110 are also the same as those in the functional block diagram of Figure 7.

[0091] The virtual temperature controller in the virtual power output unit 120 calculates the virtual power to supply to the heater 63 according to the set temperature in the processing vessel 65 provided by the process parameter acquisition unit 102 and the predicted temperature of InnerT / C provided by the temperature prediction unit 112. The virtual power output unit 120 provides the calculated virtual power to the temperature prediction unit 112. The virtual power output unit 120 also provides the calculated virtual power to the adjustment unit 116.

[0092] The simulation model 114 of the temperature prediction unit 112 receives virtual power as input and outputs a predicted temperature of InnerT / C in the processing container 65. The temperature prediction unit 112 uses the simulation model 114 of the heat treatment apparatus 10 to predict the predicted temperature of InnerT / C in the processing container 65 according to the virtual power and outputs it to the virtual power output unit 120.

[0093] Furthermore, the heating control unit 108 notifies the adjustment unit 116 of the heater power determined by the temperature controller. The power adjustment unit 126 of the adjustment unit 116 compares the heater power notified by the heating control unit 108 with the virtual power provided by the virtual power output unit 120 and calculates the difference in heater power. Based on the calculated difference in heater power, the power adjustment unit 126 determines the corrected heater power from, for example, the table in Table 3.

[0094] [Table 3]

[0095] For example, the table in Table 3 may be set for each unit region. Also, since the transmittance of the cumulative film changes with temperature, the table in Table 3 associates the difference in heater power with the corrected heater power for each temperature range.

[0096] The "Heater Power Difference" column in Table 3 represents the difference between the heater power determined by the temperature controller and the virtual power determined by the virtual temperature controller. The "Corrected Heater Power" column in Table 3 represents the heater power used to mitigate the effect of the accumulated film inside the processing container 65. This heater power is used to bring the temperature of the wafer W closer to the set temperature. The "Corrected Heater Power," "Accumulated Film Thickness," and "Transmittance" columns in Table 3 can be determined from experimental results. The "Accumulated Film Thickness" and "Transmittance" columns in Table 3 are used for screen display and logging.

[0097] Returning to Figure 10, the power adjustment unit 126 of the adjustment unit 116 applies the corrected heater power determined using the table in Table 3 as the heater power supplied from the heater output unit 86 to the heater 63, thereby reducing the effect of the accumulated film inside the processing container 65.

[0098] Figure 11 is a flowchart of an example of the processing procedure of the control unit according to this embodiment. The flowchart in Figure 11 is similar to the flowchart in Figure 9 except for a few parts, so its explanation will be omitted as appropriate.

[0099] Steps S50 to S54 are the same as steps S30 to S34 in Figure 9. In step S56, the adjustment unit 116 of the control unit 100 compares the heater power notified by the heating control unit 108 with the virtual power notified by the virtual power output unit 120 and calculates the difference in heater power. The adjustment unit 116 determines the corrected heater power corresponding to the calculated difference in heater power, for example, using the table in Table 3.

[0100] In step S58, the adjustment unit 116 applies the determined corrected heater power as the heater power supplied from the heater output unit 86 to the heater 63, thereby reducing the effect of the accumulated film inside the processing container 65.

[0101] Thus, in the heat treatment apparatus 10 with the functional configuration shown in Figure 10, the heater power can be adjusted to reduce the effect of the accumulated film inside the tube by determining the corrected heater power based on the difference between the heater power supplied to the heater 63 and the virtual power predicted by the prediction unit 110.

[0102] The control unit 100 of the heat treatment apparatus 10 may be implemented with the functional configuration shown in Figure 12, for example. Figure 12 is a functional configuration diagram of an example of the control unit of the heat treatment apparatus according to this embodiment. Note that the functional block diagram in Figure 12 omits the illustration of components that are not necessary for the explanation of this embodiment.

[0103] The control unit 100 executes a program to implement the process parameter acquisition unit 102, the temperature sensor data acquisition unit 104, the process control unit 106, the heating control unit 108, the prediction unit 110, and the adjustment unit 116. The prediction unit 110 includes a first temperature prediction unit 112-1, a second temperature prediction unit 112-2, a first simulation model 114-1, a second simulation model 114-2, and a virtual power output unit 120. The adjustment unit 116 includes a virtual power determination unit 124, a power adjustment unit 126, and a transmittance adjustment unit 130. Furthermore, the functional block diagram in Figure 12 contains parts similar to the functional block diagram described above, so its explanation will be omitted as appropriate.

[0104] The process parameter acquisition unit 102 acquires process parameters for the process executed in the heat treatment apparatus 10. The process parameter acquisition unit 102 provides the acquired process parameters to the process control unit 106. The process parameters include the set temperature inside the processing vessel 65. The process parameter acquisition unit 102 also provides the set temperature inside the processing vessel 65 to the virtual power output unit 120.

[0105] The temperature sensor data acquisition unit 104 acquires the measured temperature of the InnerT / C. The temperature sensor data acquisition unit 104 provides the acquired measured temperature of the InnerT / C to the process control unit 106.

[0106] The process control unit 106 executes the process in the heat treatment apparatus 10 according to the process parameters provided by the process parameter acquisition unit 102. The temperature controller of the process control unit 106 determines the heater power according to the set temperature and measured temperature in the provided processing vessel 65. The heating control unit 108 controls the supply of heater power from the heater output unit 86 to the heater 63 by providing a control signal for the heater power to the heater output unit 86. The heating control unit 108 notifies the first temperature prediction unit 112-1 of the prediction unit 110 of the heater power determined by the temperature controller.

[0107] The first temperature prediction unit 112-1 has a first simulation model 114-1. The first simulation model 114-1 is the same as the simulation model 114 of the heat treatment apparatus 10. The first simulation model 114-1 predicts the temperature measured by the InnerT / C in the processing vessel 65 according to the heater power determined by the temperature controller, and outputs it to the adjustment unit 116 as the first predicted temperature of the InnerT / C in the processing vessel 65.

[0108] The virtual temperature controller in the virtual power output unit 120 calculates virtual power according to the set temperature in the processing vessel 65 provided by the process parameter acquisition unit 102 and the second predicted temperature of InnerT / C provided by the second temperature prediction unit 112-2. The virtual power output unit 120 provides the calculated virtual power to the second temperature prediction unit 112-2.

[0109] The second temperature prediction unit 112-2 has a second simulation model 114-2 of the heat treatment apparatus 10. The second simulation model 114-2 is the same as the simulation model 114 in Figure 7. The second simulation model 114-2 predicts the temperature measured by the InnerT / C in the processing container 65 according to the virtual power and the transmittance of the accumulated film, and outputs it to the adjustment unit 116 and the virtual power output unit 120 as the second predicted temperature of the InnerT / C in the processing container 65. The second simulation model 114-2 can also predict the temperature of the wafer W based on the virtual power and the transmittance of the accumulated film, and output it to the adjustment unit 116 as the predicted temperature of the wafer W. The second temperature prediction unit 112-2 outputs (feeds back) the second predicted temperature of the InnerT / C to the virtual power output unit 120.

[0110] Furthermore, the heating control unit 108 notifies the adjustment unit 116 of the heater power determined by the temperature controller. The transmittance adjustment unit 130 of the adjustment unit 116 calculates the difference between the first predicted temperature of the InnerT / C provided by the first temperature prediction unit 112-1 and the second predicted temperature of the InnerT / C provided by the second temperature prediction unit 112-2.

[0111] The transmittance adjustment unit 130 adjusts the transmittance of the cumulative film of the second simulation model 114-2 so as to reduce the difference between the first predicted temperature of InnerT / C and the second predicted temperature of InnerT / C.

[0112] The virtual power determination unit 124 adjusts the virtual power output by the virtual power output unit 120 so that the predicted temperature of the wafer W, predicted by the second simulation model 114-2 in which the transmittance of the cumulative film has been adjusted by the transmittance adjustment unit 130, approaches the set temperature.

[0113] The power adjustment unit 126 can reduce the effect of the accumulated film inside the processing container 65 by applying the virtual power adjusted by the virtual power determination unit 124 as the heater power supplied from the heater output unit 86 to the heater 63.

[0114] The control unit 100 in Figure 12 may, for example, use the table in Table 4 to determine the transmittance and thickness of the cumulative film, and use this information for screen display and logging. For example, the table in Table 4 may be set for each unit region. Also, since the transmittance of the cumulative film changes depending on the temperature range, the transmittance and thickness of the cumulative film may be set for each temperature range. The items "transmittance" and "thickness of the cumulative film" in the table in Table 4 can be determined from experimental results.

[0115] [Table 4]

[0116] Figure 13 is a flowchart of an example of the processing procedure of the control unit according to this embodiment. In step S70, the control unit 100 of the heat treatment apparatus 10 acquires the process parameters of the process to be executed in the heat treatment apparatus 10.

[0117] In step S72, the process control unit 106 of the control unit 100 executes the process in the heat treatment apparatus 10 according to the acquired process parameters and starts controlling the heater power supplied to the heater 63. As a result, the temperature inside the processing vessel 65 is adjusted according to the set temperature.

[0118] In step S74, the first temperature prediction unit 112-1 outputs a first predicted temperature of InnerT / C using the first simulation model 114-1. In step S76, the second temperature prediction unit 112-2 outputs a second predicted temperature of InnerT / C using the second simulation model 114-2.

[0119] In step S78, the transmittance adjustment unit 130 calculates the difference between the first predicted temperature of the InnerT / C provided by the first temperature prediction unit 112-1 and the second predicted temperature of the InnerT / C provided by the second temperature prediction unit 112-2.

[0120] In step S80, the transmittance adjustment unit 130 adjusts the transmittance of the cumulative film of the second simulation model 114-2 so as to reduce the difference between the first predicted temperature of the InnerT / C and the second predicted temperature of the InnerT / C.

[0121] In step S82, the virtual power determination unit 124 causes the second simulation model 114-2, whose transmittance of the cumulative film has been adjusted by the transmittance adjustment unit 130, to output the predicted temperature of the wafer W. The virtual power determination unit 124 adjusts the virtual power output by the virtual power output unit 120 so that the predicted temperature of the wafer W output by the second simulation model 114-2 approaches the set temperature.

[0122] In step S84, the power adjustment unit 126 reduces the effect of the accumulated film inside the processing container 65 by applying the virtual power adjusted by the virtual power determination unit 124 as the heater power supplied from the heater output unit 86 to the heater 63. The control unit 100 repeats the process from steps S74 to S86 until the process is completed.

[0123] Thus, in the heat treatment apparatus 10 with the functional configuration shown in Figure 13, the heater power can be adjusted to reduce the influence of the accumulated film inside the tube by adjusting the transmittance of the cumulative film in the second simulation model 114-2 and predicting the temperature of the wafer W using the second simulation model 114-2 after adjusting the transmittance.

[0124] According to this embodiment, even when a cumulative film is attached inside the tube, the amount of heat reaching the wafer W (the temperature of the wafer W) can be controlled more accurately. Therefore, according to this embodiment, variations in the wafer W due to the cumulative film are reduced, and process performance can be improved.

[0125] The control unit 100 of the heat treatment apparatus 10 can reduce the influence of accumulated film from the heat treatment apparatus 10 while it is performing heat treatment by utilizing digital twin technology.

[0126] In the above-described embodiment, the control unit 100 of the heat treatment apparatus 10 reduced the effect of the accumulated film on the heat treatment apparatus 10. The process of reducing the effect of the accumulated film on the heat treatment apparatus 10 may be performed by another information processing apparatus that is data-communicatively connected to the control unit 100.

[0127] Figure 14 is a configuration diagram of an example of an information processing system according to this embodiment. The information processing system in Figure 14 includes a heat treatment apparatus 10, an autonomous control controller 210, an apparatus control controller 220, a host computer 230, an external measuring instrument 240, and an analysis server 250.

[0128] The heat treatment apparatus 10, autonomous control controller 210, device control controller 220, host computer 230, external measuring instrument 240, and analysis server 250 are connected to each other via a network such as a LAN (Local Area Network).

[0129] The heat treatment apparatus 10 executes the process according to the control commands (process parameters) output from the apparatus control controller 220. The autonomous control controller 210 is a controller for autonomously controlling the heat treatment apparatus 10 and performs simulations of the process state being executed in the heat treatment apparatus 10 using a simulation model. An autonomous control controller 210 is provided for each heat treatment apparatus 10. The autonomous control controller 210 performs the process to reduce the effect of the accumulated film in the heat treatment apparatus 10, which was performed by the control unit 100 in the above embodiment.

[0130] Furthermore, the device control controller 220 is a controller with a computer configuration for controlling the heat treatment apparatus 10. The device control controller 220 outputs process parameters to the heat treatment apparatus 10 to control the control components of the heat treatment apparatus 10. The host computer 230 is an example of a man-machine interface (MMI) that receives instructions for the heat treatment apparatus 10 from the operator and provides the operator with information about the heat treatment apparatus 10.

[0131] The external measuring instrument 240 is a measuring instrument that measures the results after a process has been executed according to process parameters, such as a film thickness measuring instrument, a sheet resistance measuring instrument, and a particle measuring instrument. For example, the external measuring instrument 240 measures the degree of film adhesion on a wafer, such as a monitor wafer.

[0132] The analysis server 250 performs data analysis necessary for processing performed by the autonomous control controller 210, for example. The analysis server 250 may also edit the simulation model of the heat treatment apparatus 10 using machine learning or the like with data collected from multiple heat treatment apparatuses 10.

[0133] It should be noted that the information processing system in Figure 14 is just one example, and there are various system configurations depending on the application and purpose. The classification of devices in Figure 14, such as the heat treatment apparatus 10, autonomous control controller 210, device control controller 220, host computer 230, external measuring instrument 240, and analysis server 250, is just one example.

[0134] For example, the information processing system can have various configurations, such as an integrated configuration of at least two of the following: a heat treatment apparatus 10, an autonomous control controller 210, a device control controller 220, a host computer 230, an external measuring instrument 240, and an analysis server 250, or a configuration in which these are further separated.

[0135] The autonomous control controller 210, device control controller 220, host computer 230, and analysis server 250 of the information processing system shown in Figure 14 are implemented by a computer with the hardware configuration shown in Figure 15, for example. Furthermore, the control unit 100 of the aforementioned heat treatment apparatus 10 is also implemented by a computer with the hardware configuration shown in Figure 15. Figure 15 is a hardware configuration diagram of an example computer.

[0136] The computer 500 in Figure 15 includes an input device 501, an output device 502, an external interface 503, RAM (Random Access Memory) 504, ROM (Read Only Memory) 505, a CPU (Central Processing Unit) 506, a communication interface 507, and an HDD (Hard Disk Drive) 508, all of which are interconnected via bus B. The input device 501 and output device 502 may be connected and used only when necessary.

[0137] The input device 501 is a keyboard, mouse, touch panel, etc., used by operators to input various operation signals. The output device 502 is a display, etc., which displays the processing results from the computer 500. The communication I / F 507 is an interface that connects the computer 500 to a network. The HDD 508 is an example of a non-volatile storage device that stores programs and data.

[0138] External I / F 503 is an interface to external devices. Computer 500 can read from and / or write to recording media 503a such as an SD (Secure Digital) memory card via External I / F 503. ROM 505 is an example of a non-volatile semiconductor memory (storage device) that stores programs and data. RAM 504 is an example of a volatile semiconductor memory (storage device) that temporarily holds programs and data.

[0139] The CPU 506 is a processing unit that reads programs and data from storage devices such as the ROM 505 and HDD 508 onto the RAM 504 and executes processing, thereby realizing the overall control and functions of the computer 500.

[0140] The autonomous control controller 210, device control controller 220, host computer 230, and analysis server 250 of the information processing system shown in Figure 14 can implement various functions through the hardware configuration of the computer 500 shown in Figure 15. Furthermore, the control unit 100 of the heat treatment apparatus 10, as described above, can also implement various functions through the hardware configuration of the computer 500 shown in Figure 15.

[0141] In this embodiment, a digital twin of the actual heat treatment apparatus 10 and the simulated heat treatment apparatus 10 is realized by having the autonomous control controller 210 run a simulation of a physical model using the process parameters of the heat treatment apparatus 10 in real time. By comparing information obtained from the actual heat treatment apparatus 10 (heater power, measured temperature, etc.) with information obtained from the simulation (virtual power, predicted temperature, etc.) in real time, it is possible to predict the effect of the accumulated film on the heat treatment apparatus 10 during heat treatment and to execute processes to reduce the effect of the accumulated film.

[0142] By utilizing the technology of the above-described embodiment, the heat treatment apparatus 10 according to this embodiment can extend the cleaning cycle even when there is an accumulated film. For equipment that does not perform cleaning after each process (equipment that does not operate One Depo Edge Depo), the effect of the accumulated film can be reduced, and the number of steps to remove the accumulated film (dry cleaning or wet etching during maintenance) can be reduced. As a result, the heat treatment apparatus 10 according to this embodiment can reduce downtime and improve production efficiency, and also reduce the environmental burden caused by cleaning.

[0143] Furthermore, for equipment that performs cleaning after each process (equipment operating under One Depo Edge Depo conditions), if production is tight, it becomes possible to shorten the dry cleaning time between processes, prioritize wafer W processing, and use the freed-up time to clean the accumulated film all at once.

[0144] Furthermore, the heat treatment apparatus 10 according to this embodiment allows the user to set the frequency and amount of dry cleaning. Even for devices that perform cleaning after each process, the heat treatment apparatus 10 according to this embodiment can adjust the heater power to take into account the effect of the small amount of accumulated film that forms during the process, and the more critical the process, the more it can contribute to improved performance and extended lifespan.

[0145] Furthermore, by applying the technology of the above-described embodiment to the dry cleaning process, the heat treatment apparatus 10 according to this embodiment can achieve improved detection of the end point of dry cleaning, a reduction in dry cleaning time, and a reduction in the consumption of gases during dry cleaning.

[0146] Figure 16 is an example diagram illustrating endpoint detection, time reduction, and gas consumption reduction in dry cleaning. Graph 1000 in Figure 16 shows an example of the temperature inside the processing container 65 in existing dry cleaning. Graph 1002 shows an example of the temperature inside the processing container 65 in dry cleaning of the heat treatment apparatus 10 according to this embodiment.

[0147] In existing dry cleaning methods, in order to keep the amount and rate of accumulated film removal constant, the furnace was stabilized to a constant temperature state as shown in Graph 1000, and then cleaning was performed by flowing cleaning gas in a temperature-stable state. In the dry cleaning of the heat treatment apparatus 10 according to this embodiment, as shown in Graph 1002, the amount of accumulated film removed can be controlled even when the temperature is not stable, so cleaning gas can be flowed before the temperature stabilizes, and the cleaning time can be shortened.

[0148] Furthermore, while existing dry cleaning methods remove more of the accumulated film at higher temperatures, they are often performed at lower temperatures to prevent excessive removal of the accumulated film and thus the quartz, and because it takes time for the temperature to stabilize at high temperatures. In this embodiment, the dry cleaning temperature is raised until the accumulated film is removed and close to the quartz (end), and then the dry cleaning temperature is lowered as it approaches the end, thereby shortening the dry cleaning time and reducing gas consumption.

[0149] The endpoint detection for dry cleaning is performed, for example, as shown in Figure 17. Figure 17 is an example diagram illustrating the endpoint detection for dry cleaning according to this embodiment.

[0150] In step S100, the control unit 100 of the heat treatment apparatus 10 acquires process parameters for the dry cleaning process to be performed in the heat treatment apparatus 10. In step S102, the process control unit 106 of the control unit 100 starts executing the dry cleaning process in the heat treatment apparatus 10 according to the acquired process parameters and starts controlling the heater power supplied to the heater 63.

[0151] In step S104, the prediction unit 110 of the control unit 100 uses a simulation model 114 without a cumulative film to output a predicted temperature of InnerT / C in the processing container 65 corresponding to the heater power supplied to the heater 63 of the heat treatment apparatus 10.

[0152] In step S106, the adjustment unit 116 of the control unit 100 compares the measured temperature of the InnerT / C provided by the temperature sensor data acquisition unit 104 with the predicted temperature of the InnerT / C in the processing container 65 provided by the temperature prediction unit 112, and calculates the difference between the predicted temperature and the measured temperature of the InnerT / C. Based on the calculated difference, the adjustment unit 116 determines the thickness of the accumulated film.

[0153] In step S108, the adjustment unit 116 determines whether or not it is the endpoint based on the determined cumulative film thickness. If it determines that it is not the endpoint, the adjustment unit 116 proceeds to step S110, adjusts the heater power based on the determined cumulative film thickness, and returns to step S104. If it determines that it is the endpoint, the adjustment unit 116 terminates the dry cleaning process.

[0154] Furthermore, for dry cleaning endpoint detection, information on how much material is removed per unit time for different temperatures, pressures, and gas volumes can be created as a table, and the amount of material removed can be accumulated to control the amount of material removed relative to the accumulated film thickness. Note that combining dry cleaning endpoint detection using a table with the endpoint detection shown in Figure 17 can further improve safety. Additionally, a model of the process of removing the accumulated film during dry cleaning may be created.

[0155] Although preferred embodiments of the present invention have been described in detail above, the present invention is not limited to the embodiments described above, and various modifications and substitutions can be made to the embodiments described above without departing from the scope of the present invention. [Explanation of symbols]

[0156] 10 Heat treatment equipment 44 boats 63, 63-1~63-10 Heater 65 Processing containers 100 Control Unit 102 Process parameter acquisition unit 104 Temperature sensor data acquisition unit 106 Process Control Unit 108 Heating Control Unit 110 Prediction Unit 112 Temperature prediction section 114 Simulation Models 116 Adjustment section 120 Virtual power output section 122 Transmittance determination section 124 Virtual Power Determination Unit 126 Power adjustment section 130 Transmittance adjustment section 210 Autonomous Control Controller 220 Device control controller 230 Host Computers 240 External measuring instruments 250 analysis servers 500 Computers Ai1~Ai10 Temperature sensors inside the processing container W wafer

Claims

1. An information processing system comprising a heat treatment apparatus that performs film formation on a substrate to be treated using a heating unit that heats the substrate to be treated in a processing container, and an information processing apparatus that controls the power supplied to the heating unit, A prediction unit configured to predict the effect of the accumulated film attached inside the processing container on the temperature of the substrate to be processed, using a simulation model of the heat treatment apparatus, An adjustment unit configured to adjust the power supplied to the heating unit according to the predicted effect of the accumulated film attached inside the processing container on the temperature of the substrate to be processed, It has, The prediction unit is configured to output a predicted temperature inside the processing container according to the power supplied to the heating unit, using a simulation model of the heat treatment apparatus. The adjustment unit is configured to adjust the power supplied to the heating unit based on the difference between the measured temperature inside the processing container and the predicted temperature inside the processing container. An information processing system characterized by the following.

2. An information processing system comprising: a heat processing apparatus for performing film deposition on a substrate to be processed using a heating unit that heats the substrate to be processed in a processing container; and an information processing apparatus for controlling the power supplied to the heating unit, A prediction unit configured to predict the effect of the accumulated film attached inside the processing container on the temperature of the substrate to be processed, using a simulation model of the heat treatment apparatus, An adjustment unit configured to adjust the power supplied to the heating unit according to the predicted effect of the accumulated film attached inside the processing container on the temperature of the substrate to be processed, It has, The prediction unit, A virtual power output unit configured to output virtual power to be supplied to a simulation model of the heat treatment apparatus according to the set temperature and the predicted temperature inside the processing vessel, A temperature prediction unit configured to output a predicted temperature inside the processing container corresponding to the virtual power to the virtual power output unit using a simulation model of the heat treatment apparatus, It has, The adjustment unit is, A transmittance determination unit is configured to determine the transmittance of the accumulated film attached inside the processing container based on the difference between the power supplied to the heating unit and the virtual power, A virtual power determination unit is configured to determine the virtual power at which the predicted temperature of the substrate to be processed in the processing container approaches the set temperature in the processing container, using a simulation model of the heat treatment apparatus to which the determined transmittance is applied. A power adjustment unit configured to adjust the power supplied to the heating unit based on the determined virtual power, An information processing system having

3. The prediction unit, A virtual power output unit configured to output virtual power to be supplied to a simulation model of the heat treatment apparatus according to the set temperature and the predicted temperature inside the processing vessel, A temperature prediction unit configured to output a predicted temperature inside the processing container corresponding to the virtual power to the virtual power output unit using a simulation model of the heat treatment apparatus, It has, The adjustment unit is, A power adjustment unit configured to adjust the power supplied to the heating unit based on the difference between the power supplied to the heating unit and the virtual power, The information processing system according to claim 2, having the following:

4. The prediction unit, A first temperature prediction unit is configured to output a first predicted temperature in the processing container corresponding to the power supplied to the heating unit, using a first simulation model of the heat treatment apparatus, A second temperature prediction unit is configured to output a second predicted temperature inside the processing container according to virtual power, using a second simulation model of the heat treatment apparatus that can apply the transmittance of the accumulated film attached inside the processing container, A virtual power output unit configured to output virtual power to be supplied to a second simulation model of the heat treatment apparatus according to the set temperature in the processing vessel and a second predicted temperature in the processing vessel, It has, The adjustment unit is, A transmittance adjustment unit configured to adjust the transmittance applied to a second simulation model of the heat treatment apparatus based on the difference between the first predicted temperature and the second predicted temperature, A virtual power determination unit is configured to determine the virtual power such that the predicted temperature of the substrate to be processed in the processing container, predicted by a second simulation model of the heat treatment apparatus after adjusting the transmittance, approaches the set temperature in the processing container. A power adjustment unit configured to adjust the power supplied to the heating unit based on the determined virtual power, The information processing system according to claim 2, having the following:

5. The heating section is associated with one of a plurality of unit regions obtained by dividing the area within the processing container. The adjustment unit is configured to adjust the power supplied to the heating unit for each unit region. An information processing system according to any one of claims 1 to 4, characterized by the following:

6. The simulation model for the heat treatment apparatus is a thermal model that predicts the temperature measured by the temperature sensor in the processing container and the temperature of the substrate to be processed in the processing container. An information processing system according to any one of claims 1 to 4, characterized by the following:

7. An information processing system comprising: a heat processing apparatus for performing film formation on a substrate to be processed using a heating unit that heats the substrate to be processed in a processing container; and an information processing apparatus for controlling the power supplied to the heating unit, A prediction unit configured to predict the effect of the accumulated film attached inside the processing container on the temperature of the substrate to be processed, using a simulation model of the heat treatment apparatus, An adjustment unit configured to adjust the power supplied to the heating unit according to the predicted effect of the accumulated film attached inside the processing container on the temperature of the substrate to be processed, It has, The prediction unit is configured to output a predicted temperature inside the processing container based on the power supplied to the heating unit when no accumulated film has formed inside the processing container, using a simulation model of the heat treatment apparatus. The adjustment unit is configured to adjust the power supplied to the heating unit during the cleaning process to remove the accumulated film inside the processing container, based on the difference between the measured temperature inside the processing container and the predicted temperature inside the processing container. An information processing system characterized by the following.

8. The adjustment unit is configured to detect the endpoint at which the cleaning process should be terminated based on the difference between the measured temperature inside the processing container and the predicted temperature inside the processing container. The information processing system according to claim 7, characterized by the following:

9. A power adjustment method executed by an information processing system having a heat treatment apparatus that performs film deposition on a substrate to be treated using a heating unit that heats the substrate to be treated in a processing container, and an information processing apparatus that controls the power supplied to the heating unit, Using a simulation model of the heat treatment apparatus, predict the effect of the accumulated film attached inside the processing container on the temperature of the substrate to be treated, The power supplied to the heating unit is adjusted according to the predicted effect of the accumulated film attached to the processing container on the temperature of the substrate to be processed, It has, The above prediction involves using a simulation model of the heat treatment apparatus to output a predicted temperature inside the processing container corresponding to the power supplied to the heating unit, The adjustment described above involves adjusting the power supplied to the heating unit based on the difference between the measured temperature inside the processing container and the predicted temperature inside the processing container. A power adjustment method characterized by the following.

10. A heat treatment apparatus for forming a film on a substrate to be treated using a heating unit that heats the substrate to be treated in a processing container, A prediction unit configured to predict the effect of the accumulated film attached inside the processing container on the temperature of the substrate to be processed, using a simulation model of the heat treatment apparatus, An adjustment unit configured to adjust the power supplied to the heating unit according to the predicted effect of the accumulated film attached inside the processing container on the temperature of the substrate to be processed, It has, The prediction unit is configured to output a predicted temperature inside the processing container according to the power supplied to the heating unit, using a simulation model of the heat treatment apparatus. The adjustment unit is configured to adjust the power supplied to the heating unit based on the difference between the measured temperature inside the processing container and the predicted temperature inside the processing container. A heat treatment apparatus characterized by the following.

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