Electrodes and methods for manufacturing electrodes

Abstract

To provide an electrode of which warpage amount is suppressed while widening a potential window.SOLUTION: An electrode 1 includes: a resin film 2; a metal underlying layer 3; and a conductive carbon layer 4 having a sp2 bonding and a sp3 bonding, which are deposited in one detection in the thickness direction. The ratio of the number of sp3-bonding atoms to the sum of the number of sp3-bonding atoms and the number of sp2-bonding atoms is at least 0.25. The thickness of the metal underlying layer 3 is less than 50 nm.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to an electrode.

Background Art

[0002] Conventionally, an electrode in which an underlayer film and a carbon film are sequentially laminated on one side of a plastic substrate is known (see, for example, Patent Document 1 below).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In recent years, electrodes having even higher sensitivity have been demanded. Therefore, in the carbon film, it has been proposed to increase the ratio of the number of atoms bonded by sp 3 bonding and the number of atoms bonded by sp 2 bonding to widen the potential window. 3 However, if the ratio of the number of atoms bonded by sp

[0005] bonding is increased, the carbon film becomes hard, and thus the electrode warps. 3 The present invention provides an electrode with a widened potential window and a suppressed amount of warping.

[0006] The present invention (1) includes, in order from one side in the thickness direction, a resin film, a metal underlayer, and a conductive carbon layer having sp

Means for Solving the Problems

[0007] bonding and sp 2 bonding, and the number of atoms bonded by sp 3 bonding and sp 3 bonding and the number of atoms bonded by sp 2The ratio of the number of bonded atoms to the sum of the number of bonded atoms is sp 3 The electrode includes a ratio of the number of bonded atoms of 0.25 or more and a thickness of the metal underlayer of less than 50 nm.

[0008] The present invention (2) includes the electrode according to (1), wherein the material of the metal underlayer is at least one metal element selected from the group consisting of titanium, tantalum, chromium, molybdenum, and tungsten.

[0009] The present invention (3) includes the electrode according to (1) or (2), wherein the thickness of the conductive carbon layer is 0.2 nm or more and 50 nm or less.

[0010] The present invention (4) includes the electrode according to any one of (1) to (3), wherein the material of the resin film is polyethylene terephthalate.

Advantages of the Invention

[0011] The electrode of the present invention can widen the potential window while suppressing the amount of warpage.

Brief Description of the Drawings

[0012] [Figure 1] FIG. 1 shows a cross-sectional view of an embodiment of the electrode of the present invention. [Figure 2] FIG. 2 is a perspective view for explaining the curl measurement of the example.

Embodiments for Carrying Out the Invention

[0013] <One Embodiment> One embodiment of the electrode of the present invention will be described with reference to FIG. 1.

[0014] (Electrode 1) As shown in FIG. 1, the electrode 1 has a predetermined thickness and has a film shape (including a sheet shape) extending in a plane direction orthogonal to the thickness direction. The electrode 1 has one flat surface in the plane direction and another surface spaced apart from the one surface in the thickness direction.

[0015] Specifically, the electrode 1 comprises a resin film 2, a metal underlayment 3 disposed on one side of the resin film 2 in the thickness direction, and a conductive carbon layer 4 disposed on one side of the metal underlayment 3 in the thickness direction. That is, the electrode 1 comprises the resin film 2, the metal underlayment 3, and the conductive carbon layer 4 in order on one side in the thickness direction. Preferably, the electrode 1 consists of the resin film 2, the metal underlayment 3, and the conductive carbon layer 4. Each layer will be described in detail below.

[0016] (Resin film 2) The resin film 2 forms other surfaces of the electrode 1 in the thickness direction. The resin film 2 has a film shape that extends in the planar direction. The resin film 2 is the base film of the electrode 1.

[0017] The resin film 2 is, for example, flexible. Specifically, the bending resistance test of the resin film 2 (JIS C 5016 (1994)) is, for example, 250 times or more, preferably 500 times or more. If the bending resistance test of the resin film 2 is above the lower limit mentioned above, the resin film 2 has excellent flexibility.

[0018] Examples of materials for the resin film 2 include polyester resin (e.g., polyethylene terephthalate, polyethylene naphthalate), acetate resin, polyethersulfone resin, polycarbonate resin, polyamide resin, polyimide resin, polyolefin resin (e.g., polycycloolefin polymer), (meth)acrylic resin, polyvinyl chloride resin, polyvinylidene chloride resin, polystyrene resin, polyvinyl alcohol resin, polyarylate resin, and polyphenylene sulfide resin. Preferably, polyester resin is used, and more preferably, polyethylene terephthalate.

[0019] The thickness of the resin film 2 is not particularly limited, and is, for example, 2 μm or more, preferably 20 μm or more, and also, for example, 1000 μm or less, preferably 500 μm or less.

[0020] (metal base layer) The metal underlayment 3 is positioned on one side in the thickness direction of the resin film 2. Specifically, the metal underlayment 3 is in contact with the entire surface of one side in the thickness direction of the resin film 2. The metal underlayment 3 extends in the planar direction. The metal underlayment 3 is an intermediate layer located between the resin film 2 and the conductive carbon layer 4.

[0021] Examples of materials for the metal underlayer 3 include Group 4 metal elements such as titanium and zirconium, Group 5 metal elements such as vanadium, niobium, and tantalum, Group 6 metal elements such as chromium, molybdenum, and tungsten, Group 7 metal elements such as manganese, Group 8 metal elements such as iron, Group 9 metal elements such as cobalt, Group 10 metal elements such as nickel and platinum, Group 11 metal elements such as gold, Group 12 metal elements such as zinc, Group 13 metal elements such as aluminum and gallium, and Group 14 metal elements such as germanium and tin. These materials can be used individually or in combination. Preferably, the material for the metal underlayer 3 is titanium, tantalum, chromium, molybdenum, or tungsten, and more preferably, titanium and tungsten are used from the viewpoint of chemical stability, and even more preferably, tungsten is used.

[0022] The thickness of the metal underlayer 3 is less than 50 nm, preferably 45 nm or less, more preferably 40 nm or less, and even more preferably 35 nm or less. If the thickness of the metal underlayer 3 exceeds the above upper limit, the electrode 1 will warp.

[0023] Furthermore, the thickness of the metal underlayer 3 is, for example, 0.1 nm or more, preferably 1 nm or more, and more preferably 5 nm or more. If the thickness of the metal underlayer 3 is above the lower limit mentioned above, the sensing stability is excellent.

[0024] The thickness of the metal underlayer 3 is determined by X-ray diffraction. The X-ray diffraction method will be described in detail in the examples.

[0025] (Conductive carbon layer 4) The conductive carbon layer 4 is conductive. The conductive carbon layer 4 forms one surface in the thickness direction of the electrode 1. The conductive carbon layer 4 is located on one surface in the thickness direction of the metal substrate layer 3. Specifically, the conductive carbon layer 4 is in contact with the entire surface of one surface in the thickness direction of the metal substrate layer 3. The conductive carbon layer 4 extends in the planar direction.

[0026] The conductive carbon layer 4 is sp 2 Bonding carbon and sp 3 It has carbon with bonds as its main component. In other words, the conductive carbon layer 4 is a layer having a graphite-type structure and a diamond-type structure. As a result, the conductive carbon layer 4 has good conductivity and its sensitivity to the object being measured is greatly improved.

[0027] The conductive carbon layer 4 may contain oxygen in addition to carbon, for example. Specifically, oxygen may be contained on one side in the thickness direction of the conductive carbon layer 4. The oxygen concentration ratio (O / C) to carbon on one side in the thickness direction of the conductive carbon layer 4 is not particularly limited, and may be, for example, 0.001 or more, or 0.2 or less.

[0028] Furthermore, the conductive carbon layer 4 is permitted to contain trace amounts of unavoidable impurities other than oxygen.

[0029] In the conductive carbon layer 4, sp 3 The number of bonded atoms and sp 2 sp for the sum of the number of bonded atoms 3 The ratio of the number of atoms bonded together (sp 3 / sp 3 +way 2 ) is 0.25 or higher, preferably 0.30 or higher, and more preferably 0.35 or higher. 3 The ratio of the number of atoms bonded together (sp 3 / sp 3 +way 2 If the value falls below the lower limit mentioned above, the potential window of electrode 1 cannot be widened.

[0030] Also, sp3 The number of bonded atoms and sp 2 sp for the sum of the number of bonded atoms 3 The ratio of the number of atoms bonded together (sp 3 / sp 3 +way 2 ) is, for example, 0.9 or less, preferably 0.6 or less. 3 The ratio of the number of atoms bonded together (sp 3 / sp 3 +way 2 If the value is below the upper limit mentioned above, the conductivity of the conductive carbon layer 4 can be ensured, and the decrease in the detection sensitivity of the electrode 1 can be suppressed.

[0031] sp 3 The ratio of the number of atoms bonded together (sp 3 / sp 3 +way 2 ) is a spectrum obtained by measuring one side in the thickness direction of the conductive carbon layer 4 by X-ray photoelectron spectroscopy, where sp 2 Binding peak intensity and sp 3 It is calculated based on the peak intensity of the binding.

[0032] The surface resistance of the conductive carbon layer 4 on one side in the thickness direction is, for example, 1.0 × 10⁻⁶ 4 Ω / □ or less, preferably 1.0 × 10 3 It is less than or equal to Ω / □.

[0033] The thickness of the conductive carbon layer 4 is, for example, 0.1 nm or more, preferably 0.2 nm or more, and 100 nm or less, preferably 50 nm or less. If the thickness of the conductive carbon layer 4 is above the lower limit described above, stable electrode characteristics can be achieved. On the other hand, if the thickness of the conductive carbon layer 4 is below the upper limit described above, the electrode 1 will be easy to handle due to its excellent flexibility. The thickness of the conductive carbon layer 4 is determined by X-ray diffraction. The X-ray diffraction method will be described in detail in the examples.

[0034] (Physical properties of electrode 1) The amount of curl of this electrode 1 is small. Specifically, the amount of curl of an electrode 1 cut into a rectangular shape of 100 mm x 100 mm is, for example, 40 mm or less, preferably 30 mm or less, more preferably 20 mm or less, even more preferably 15 mm or less, and most preferably 0 mm. To determine the amount of curl, as shown in Figure 2, place the electrode 1 cut to the above size on the upper surface of the flat plate 5. The temperature at this time is 23°C. Then, when the four corners 6 curl up, measure the amount of curl (height from the flat plate) of each and obtain the amount of curl as the average of these measurements. The smaller the amount of curl of the electrode 1, the more suppressed the amount of curl of the electrode 1 is.

[0035] The thickness of electrode 1 is the total thickness of the resin film 2, the metal underlayer 3, and the conductive carbon layer 4, and specifically, for example, is 2 μm or more, preferably 20 μm or more, and also, for example, 1000 μm or less, preferably 500 μm or less.

[0036] (Method of manufacturing electrode 1) Next, we will explain how to manufacture electrode 1.

[0037] First, in this method, prepare resin film 2.

[0038] Next, a metal underlayer 3 is formed on one side of the resin film 2 in the thickness direction. The method for forming the metal underlayer 3 is not particularly limited and includes metal film deposition methods such as dry methods and wet methods such as plating. Preferably, a dry method is used. Examples of dry methods include PVD (physical vapor deposition) and CVD (chemical vapor deposition), with PVD being preferred. Examples of PVD methods include sputtering, vacuum deposition, laser deposition, and ion plating (arc deposition). Preferably, sputtering is used. The target in sputtering is, for example, the material of the metal underlayer 3. Examples of sputtering gases include inert gases such as Ar and Xe. The pressure in sputtering is, for example, 1 Pa or less. The film deposition temperature is, for example, 50°C or higher and, for example, 200°C or lower.

[0039] Subsequently, a conductive carbon layer 4 is formed on one side of the metal substrate layer 3 in the thickness direction. A dry method can be used to form the conductive carbon layer 4. Examples of dry methods include PVD (physical vapor deposition) and CVD (chemical vapor deposition), with PVD being preferred. Examples of PVD methods include sputtering, vacuum deposition, laser deposition, and ion plating (arc deposition). Sputtering is preferred.

[0040] Examples of sputtering methods include unbalanced magnetron sputtering (UBM sputtering), high-power pulsed sputtering, electron cyclotron resonance sputtering, RF sputtering, DC sputtering (such as DC magnetron sputtering), DC pulsed sputtering, and ion beam sputtering. 3 From the viewpoint of easily setting the ratio of the number of bonded atoms to the desired range described above, and from the viewpoint of improving the film deposition rate and adhesion to the metal substrate 3, the UBM sputtering method is more preferable.

[0041] Examples of targets in the sputtering method include sintered carbon. Examples of sputtering gases include inert gases. The pressure during sputtering is, for example, 1 Pa or less. The film deposition temperature is, for example, 0°C or higher and, for example, 100°C or lower.

[0042] Furthermore, the conductive carbon layer 4 can be subjected to known surface treatments such as ion milling, ion bombardment, electropolishing, and voltage application cycles (2 to 20 cycles) as needed.

[0043] sp 3 In order to set the ratio of the number of bonded atoms within the desired range described above, the sputtering conditions and surface treatments described above are selected as appropriate.

[0044] This results in an electrode 1 having a resin film 2, a metal underlayer 3, and a conductive carbon layer 4 arranged sequentially on one side in the thickness direction.

[0045] (Application of electrode 1) Electrode 1 can be used as various types of electrodes, and is preferably an electrode for electrochemical measurements to be performed using electrochemical measurement methods, specifically as a working electrode for performing cyclic voltammetry (CV) or as a working electrode for performing anodic stripping voltammetry (ASV).

[0046] (Effects of one embodiment) And according to this electrode 1, sp 3 The number of bonded atoms and sp 2 sp for the sum of the number of bonded atoms 3 Since the ratio of the number of bonded atoms is 0.25 or higher, the potential window can be widened.

[0047] On the other hand, in this electrode 1, since the thickness of the metal underlayment 3 is less than 50 nm, the internal stress that would impose a straining force on the resin film 2 in the metal underlayment 3 is reduced, and as a result, the amount of warping is suppressed.

[0048] Therefore, this electrode 1 has a wide potential window while suppressing warping.

[0049] Furthermore, in this electrode 1, if the material of the metal underlayer 3 is at least one metallic element selected from the group consisting of titanium, tantalum, chromium, molybdenum, and tungsten, sufficient adhesion between the resin film 2 and the conductive carbon layer 4 can be ensured.

[0050] Furthermore, if the thickness of the conductive carbon layer 4 is 0.2 nm or more, stable electrode characteristics can be achieved. On the other hand, if the thickness of the conductive carbon layer 4 is 50 nm or less, the electrode 1 will be easy to handle due to its excellent flexibility.

[0051] (modified version) As shown in Figure 1, in one embodiment, the electrode 1 comprises one resin film 2, one metal underlayment 3, and one conductive carbon layer 4. Alternatively, it can comprise one resin film 2, two metal underlayment 3, and two conductive carbon layers 4. In other words, the electrode 1 can be provided with two metal underlayment 3 and two conductive carbon layers 4 on one resin film 2. In this case, the conductive carbon layer 4, the metal underlayment 3, the resin film 2, the metal underlayment 3, and the conductive carbon layer 4 are arranged sequentially in the thickness direction.

[0052] Furthermore, the above-described metal film deposition method can be performed multiple times to form a metal underlayer 3 of the desired thickness. [Examples]

[0053] The present invention will be further described below with reference to examples and comparative examples. However, the present invention is not limited in any way to the examples and comparative examples. Furthermore, specific numerical values ​​such as blending ratios (content ratios), physical properties, and parameters used in the following description may be replaced with the corresponding upper limits (numerical values ​​defined as "less than or equal to" or "less than") or lower limits (numerical values ​​defined as "greater than or equal to" or "greater than or equal to") of the blending ratios (content ratios), physical properties, and parameters described in the "Modes for Carrying Out the Invention" above.

[0054] (Method for measuring the thickness of the metal underlayer 3 and the thickness of the conductive carbon layer 4) First, the method for measuring the thickness of the metal underlayment 3 and the conductive carbon layer 4 is described below. Specifically, the X-ray reflectivity method was used as the measurement principle, and the X-ray reflectivity was measured using a powder X-ray diffractometer (Rigaku Corporation, "RINT-2200") under the following <measurement conditions>. The acquired measurement data was then analyzed using analysis software (Rigaku Corporation, "GXRR3") to calculate the thickness of the metal underlayment 3 and the conductive carbon layer 4 for each example and comparative example.

[0055] For the analysis, a three-layer model consisting of a resin film 2, a metal substrate layer 3, and a conductive carbon layer 4 was adopted under the <Analysis Conditions> below, with a target thickness and density of 19.30 g / cm³ for the metal substrate layer 3. 3 Enter the following as the initial value, and also enter the target thickness and density of the conductive carbon layer 4, which is 19.5 g / cm³. 3 The initial values ​​were entered. Subsequently, the thickness of the metal underlayer 3 and the thickness of the conductive carbon layer 4 were calculated by performing least-squares fitting with the measured values.

[0056] <Measurement conditions> Measurement device: Powder X-ray diffractometer (Rigaku Corporation, "RINT-2000") Light source: Cu-Kα line (wavelength: 1,5418Å), 40kV, 40mA Optical system: Parallel beam optical system Divergence slit: 0.05 mm Light-receiving slit: 0.05mm Monochromatization and parallelization: Use of multi-layer Goebel mirrors Measurement mode: θ / 2θ scan mode Measurement range (2θ): 0.3~2.0°

[0057] <Analysis conditions> Analysis software: Rigaku Corporation, "GXRR3" Analysis method: Least squares fitting Analysis range (2θ): 2θ = 0.3 to 2.0°

[0058] (Example 1) (Preparation of resin film 2) A resin film 2 made of polyethylene terephthalate with a thickness of 50 μm was prepared.

[0059] (Formation of metal underlayer 3) Next, a tungsten metal underlayer 3 was formed on one side of the resin film 2 in the thickness direction by sputtering. The thickness of the metal underlayer 3 was 40 nm. The sputtering conditions are described below.

[0060] Target material: Tungsten Argon gas pressure: 0.6 Pa Target power: 400W Film deposition roll temperature: 120℃

[0061] (Formation of conductive carbon layer 4) Subsequently, a conductive carbon layer 4 was formed on one side of the metal substrate layer 3 in the thickness direction using the UBM sputtering method. The thickness of the conductive carbon layer 4 was 30 nm. The conditions for the UBM sputtering method are described below.

[0062] Target material: Sintered carbon Argon gas pressure: 0.8 Pa Target power: 400W Film deposition roll temperature: 30℃ DC bias (between metal underlayer 3 and target material): 75V

[0063] Subsequently, the conductive carbon layer 4 was subjected to 10 voltage application cycles, in which the applied voltage was alternately passed between 0V and 2.3V.

[0064] This resulted in obtaining electrode 1.

[0065] (Example 2) Electrode 1 was obtained by processing in the same manner as in Example 1. However, the thickness of the metal underlayer 3 was changed from 40 nm to 30 nm.

[0066] (Example 3) Electrode 1 was obtained by processing in the same manner as in Example 1. However, the thickness of the metal underlayer 3 was changed from 40 nm to 10 nm.

[0067] (Example 4) Electrode 1 was obtained by processing in the same manner as in Example 1. However, the thickness of the metal underlayer 3 was changed from 40 nm to 30 nm. Also, the DC bias was changed from 75 V to 30 V.

[0068] (Comparative Example 1) Electrode 1 was obtained by processing in the same manner as in Example 1. However, the thickness of the metal underlayer 3 was changed from 40 nm to 50 nm.

[0069] (Comparative Example 2) Electrode 1 was obtained by processing in the same manner as in Example 1. However, the thickness of the metal underlayer 3 was changed from 40 nm to 50 nm. On the other hand, DC bias was not applied and no voltage application cycle was performed.

[0070] (Example 5) Electrode 1 was obtained by processing in the same manner as in Example 2. However, chromium was used as the target material in the formation of the metal underlayer 3. In other words, the material of the metal underlayer 3 was changed from tungsten to chromium.

[0071] (Comparative Example 3) Electrode 1 was obtained by processing in the same manner as in Example 5. However, the thickness of the metal underlayer 3 was changed from 30 nm to 50 nm.

[0072] (Example 6) Electrode 1 was obtained by processing in the same manner as in Example 2. However, molybdenum was used as the target material in the formation of the metal underlayer 3. In other words, the material of the metal underlayer 3 was changed from tungsten to molybdenum.

[0073] (Comparative Example 4) Electrode 1 was obtained by processing in the same manner as in Example 6. However, the thickness of the metal underlayer 3 was changed from 30 nm to 50 nm.

[0074] (Example 7) Electrode 1 was obtained by processing in the same manner as in Example 2. However, tantalum was used as the target material in the formation of the metal underlayer 3. In other words, the material of the metal underlayer 3 was changed from tungsten to tantalum.

[0075] (Comparative Example 5) Electrode 1 was obtained by processing in the same manner as in Example 7, except that the thickness of the metal underlayer 3 was changed from 30 nm to 50 nm.

[0076] (Example 8) Electrode 1 was obtained by processing in the same manner as in Example 2. However, in the formation of the metal underlayer 3, titanium was used as the target material. In other words, the material of the metal underlayer 3 was changed from tungsten to titanium.

[0077] Tables 1 and 2 show the material of the metal underlayment 3, the thickness of the metal underlayment 3, and the thickness of the conductive carbon layer 4 for Examples 1 to 8 and Comparative Examples 1 to 5.

[0078] (evaluation) The following items were evaluated. The results are shown in Tables 1 and 2.

[0079] (sp 3 The number of bonded atoms and sp 2 sp for the sum of the number of bonded atoms 3 (Ratio of the number of atoms bonded together) X-ray photoelectron spectroscopy was performed on one side in the thickness direction of the conductive carbon layer 4 under the following <measurement conditions>. In the spectrum obtained, sp 2 Binding peak intensity and sp 3 Based on the peak intensity of the binding, sp 2 The number of bonded carbon atoms and sp 3 sp 3 Ratio of the number of carbon atoms in a bond (sp 3 / sp 3 +way 2 ) was calculated.

[0080] <Measurement conditions> Measuring device: X-ray photoelectron spectroscopy (XPS) device (manufactured by Shimadzu Corporation, product name "AXIS Nova") X-ray source: Rowland circle, 500mm diameter, with monochromator, AlKα (1486.6eV), 15kV, 10mA Photoelectron spectrometer: Orbital radius 165 mm, electrostatic double hemispherical analyzer / spherical mirror analyzer hybrid type Detector: Delay Line Detector (DLD) System Energy resolution: Ag3d5 / 2 photoelectron peak has a full width at half maximum of less than 0.48 eV. Charge neutralization: Uniform low-energy electron irradiation

[0081] (Amount of curl) First, electrode 1 was cut to a size of 100 mm in length and 100 mm in width. Next, as shown in Figure 2, electrode 1 was placed on the top surface of flat plate 5 with the resin film 2 facing downwards. The temperature at this time was 23°C. After 1 minute, the four corners 6 had curled up, and the amount of curl (height from flat plate 5) of each was measured, and the curl amount was obtained as the average of these measurements. From the curl amount, the suppression of the amount of curl was evaluated according to the following criteria.

[0082] ○: The curl length was 40mm or less. ×: The curl amount exceeded 40 mm.

[0083] [Table 1]

[0084] [Table 2]

[0085] The above invention is provided as an illustrative embodiment of the present invention, but this is merely illustrative and should not be interpreted restrictively. Modifications of the present invention that are obvious to those skilled in the art are included in the claims below. [Industrial applicability]

[0086] The electrodes are used for electrochemical measurements, specifically for performing electrochemical measurement methods. [Explanation of Symbols]

[0087] 1 electrode 2. Resin film 3 Metal base layer 4. Conductive carbon layer

Claims

1. resin film and Metal underlayer and sp ２ Bonding and sp ３ A conductive carbon layer having a bond They are arranged sequentially toward one side in the thickness direction, sp ３ Number of bonded atoms and sp ２ sp for the sum of the number of bonded atoms ３ The ratio of the number of bonded atoms is 0.3 or more and 0.4 or less. The thickness of the aforementioned resin film is 2 μm or more and 1000 μm or less. The conductive carbon layer contains carbon and oxygen, An electrode in which, on one surface in the thickness direction of the conductive carbon layer, the concentration ratio of oxygen to carbon is 0.001 or more and 0.2 or less.

2. The electrode according to claim 1, wherein the thickness of the metal underlayer is 30 nm or more and 40 nm or less.

3. The electrode according to claim 1, wherein the material of the metal underlayer is at least one metallic element selected from the group consisting of zirconium, vanadium, niobium, tantalum, molybdenum, manganese, iron, cobalt, nickel, platinum, gold, zinc, gallium, germanium, and tin.

4. The electrode according to claim 1, wherein the thickness of the conductive carbon layer is 0.2 nm or more and 50 nm or less.

5. The electrode according to claim 2, wherein the thickness of the conductive carbon layer is 0.2 nm or more and 50 nm or less.

6. The electrode according to claim 3, wherein the thickness of the conductive carbon layer is 0.2 nm or more and 50 nm or less.

7. The electrode according to any one of claims 1 to 6, wherein the material of the resin film is polyethylene terephthalate.

8. The process of preparing the resin film, The process of forming a metal underlayer on one side in the thickness direction of the resin film, On one side of the thickness direction of the aforementioned metal underlayer, sp ２ Bonding and sp ３ The process includes a step of forming a conductive carbon layer having bonds, sp ３ the number of atoms to which it is bonded and sp ２ sp with respect to the sum of the number of atoms to which it is bonded ３ the ratio of the number of atoms to which it is bonded is 0.3 or more and 0.4 or less, The thickness of the aforementioned resin film is 2 μm or more and 1000 μm or less. The conductive carbon layer contains carbon and oxygen, A method for manufacturing an electrode, wherein the concentration ratio of oxygen to carbon on one surface in the thickness direction of the conductive carbon layer is 0.001 or more and 0.2 or less.

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