Semiconductor power module, semiconductor power package, and method for manufacturing a semiconductor power module

Abstract

The semiconductor power module (1) comprises a semiconductor power device (2), a first metal component (11) coupled to a first side (5) of the semiconductor power device (2), and a second metal component (12) coupled to a second side (6) of the semiconductor power device (2) opposite to the first side (5). A control terminal (10) is electrically coupled to an electrical contact (7) of the semiconductor power device (2). The first metal component (11) and the second metal component (12) each include a given surface structure (13, 14) for guiding a cooling fluid along the semiconductor power device (2), and the hollow housing (4) restricts a predetermined internal flow of the cooling fluid. The housing (4) includes an inlet (43) and an outlet (44) for allowing the cooling fluid to enter and exit the housing (4). The housing (4) is coupled to both the first metal component (11) and the second metal component (12), surrounding the semiconductor power device (2). The housing (4), along with the first metal component (11) and the second metal component (12), forms an internal flow chamber around the semiconductor power device (2) that is filled with cooling fluid during the operation of the semiconductor power module (1).

Description

Technical Field

[0001] Detailed Description The present disclosure relates to a semiconductor power module and a method for manufacturing a semiconductor power module. The present disclosure further relates to a corresponding semiconductor power package.

Background Art

[0002] Power modules are used, for example, in automotive inverters and require a cooler to dissipate heat during operation. Such a cooler is fixed to the power module and may require additional components to establish a stable connection and ensure cooling. Document DE 102014213108 B3 discloses a power module having at least one power semiconductor, particularly a semiconductor switch. The power module also has a housing surrounding a cavity. At least one power semiconductor is arranged in the cavity surrounded by the housing. The cavity is at least partially filled with a heat-conducting medium, such that the medium is designed to transfer the heat generated by the power semiconductor to the housing.

[0003] Document US2023 / 164963 A1 discloses a liquid-cooled power electronics unit including a planar circuit board body having conductor tracks, a wet side having a wet space for transporting a dielectric coolant, and a fluidically separated dry side. At least two high-voltage power semiconductors are arranged in the wet space on the wet side of the circuit board body, the high-voltage power semiconductors are cooled by the coolant, and electronic low-voltage circuits are arranged on the dry side of the circuit board body.

Summary of the Invention

Problems to be Solved by the Invention

[0004] There is a need to provide a semiconductor power module that contributes to reliable and effective heat dissipation of a semiconductor power module during operation.

Means for Solving the Problems

[0005] This invention teeth, Claim 1 Semiconductor power module The claim described in claim 12 Compatible semiconductor power packages and Claim 14 Manufacturing method for semiconductor power modules Regarding do.

[0006] According to one embodiment, the semiconductor power module comprises at least one semiconductor power device having, for example, electrical terminals for operation, a first metal component, and a second metal component. The first metal component is coupled to a first side of the semiconductor power device, which may also be referred to as the bottom side of each device. The first metal component can be coupled directly to the bottom side of the semiconductor power device or by one or more intermediate elements. The first metal component includes a given surface structure for guiding a cooling fluid along the semiconductor power device. In particular, the given surface structure of the first metal component is formed on the side facing each semiconductor power device, which may also be referred to as the top side of the first metal component.

[0007] The second metal component is coupled to the second side of the semiconductor power device, on the side opposite to the first side with respect to the stacking direction of the semiconductor power module, which may therefore also be referred to as the upper side of each device. The second metal component may be coupled directly to the upper side of the semiconductor power device or by one or more intermediate elements. The second metal component may also include a given surface structure to guide a cooling fluid along the semiconductor power device. In particular, the given surface structure of the second metal component may be formed on the side facing each semiconductor power device, which may also be referred to as the bottom side of the second metal component.

[0008] The semiconductor power module further comprises control terminals electrically coupled to one or more electrical contacts of the semiconductor power device. Furthermore, the semiconductor power module comprises a hollow housing that restricts a predetermined internal flow of cooling fluid. The housing can be formed as a frame and includes inlets and outlets for allowing the cooling fluid to enter and exit the housing. The housing is coupled to both first and second metal components and surrounds the semiconductor power device such that the housing and the first and second metal components form an internal flow chamber configured to be filled with cooling fluid around the semiconductor power device during the operation of the semiconductor power module. With respect to the stacking direction, the first metal component forms a plate-like bottom of the semiconductor power module, and / or the second metal component forms a plate-like top of the semiconductor power module. The first and second metal components can provide covers for the bottom and top of the housing, respectively, enabling stable and reliable restriction of the internal flow chamber.

[0009] The use of the described configuration makes it possible to realize a semiconductor power module that contributes to reliable and effective heat dissipation during operation. By forming an internal flow chamber around the semiconductor power device as described, an efficient immersion-cooled semiconductor power module is possible. One or more semiconductor power devices are in direct contact with a coolant or cooling fluid that can be realized as a single-phase, convectively heat-transferring coolant, or the cooling can benefit from a phase change, e.g., vaporization which enhances heat extraction efficiency. In particular, the semiconductor power module is suitable for use in automotive or aerospace applications and / or high-voltage direct current (HVDC) applications, for example, at voltages of at least 0.5kV.

[0010] A semiconductor power module may comprise one or more semiconductor power devices, each of which may be formed as a metal oxide semiconductor field-effect transistor (MOSFET), or more generally as a metal insulator semiconductor field-effect transistor (MISFET), as a bimode insulated gate transistor (BIGT), an insulated gate bipolar transistor (IGBT), or a diode. In particular, at least one semiconductor device comprises at least two power terminals, e.g., source and drain, or emitter and collector, a transistor, and at least one gate electrically connected to a control terminal.

[0011] According to a preferred embodiment, the semiconductor power module comprises two or more semiconductor power devices, each having its own electrical terminals, for example, operation. A first metal component is coupled, in this case, to the first side of each semiconductor power device, and a second metal component is coupled, in this case, to the second side of each semiconductor power device, on the opposite side of the first side with respect to the stacking direction. Control terminals are electrically coupled to the electrical contacts of each semiconductor power device, and a hollow housing surrounds the semiconductor power devices. The housing, as well as the first and second metal components, form an internal flow chamber around the semiconductor power devices, which is configured to be filled with a cooling fluid during operation of the semiconductor power module.

[0012] The described configuration enables a beneficial setup and efficient heat dissipation for a semiconductor power module having multiple semiconductor power devices. During operation, each semiconductor device fills a given space within the semiconductor power module and is in direct contact with an insulating coolant flowing around the semiconductor power device.

[0013] Power semiconductor modules are essential components of power converters and include power semiconductor devices that dissipate electrical energy in the form of heat during operation, causing the module's temperature to rise. With increasing power density in many power electronics applications, and the shift from conventional silicon (Si) devices to semiconductors with higher power density capabilities such as silicon carbide (SiC), efficient and reliable thermal management is required to meet cooling requirements and enable features such as overload capability.

[0014] One insight in the context of this disclosure is that, in conventional module packaging and cooling mechanisms, heat generated in a semiconductor device must be conducted through many layers of packaging, such as chip bonding material, substrate and substrate bond, base plate, cooler, and its thermal interface material (TIM), before it can reach the coolant and be extracted from the module. In addition, in many high-voltage or high-power applications, such as HVDC systems where water or a water-glycol mixture is used for cooling, heat sinks are often conservatively designed with thick metal layers to mitigate the risk of rupture and water leakage caused by arc discharge or explosion in the event of failure. However, if the cooler has a relatively large thickness, it results in increased thermal resistance and limits the heat extraction capacity. Conventional cooling measures suffer from high thermal resistance between the hot point and the coolant.

[0015] Therefore, cooling of power modules is an essential part of system design to ensure that the power module or semiconductor does not fail and that the characteristics of the semiconductor device and power module are maintained within the expected range. According to the power module configuration described, thermal resistance can be minimized or at least significantly reduced by bringing the cooling fluid as close as possible to the chip or semiconductor power device. The use of such immersion cooling for power electronics can enable the full potential of the semiconductor device by minimizing or reducing temperature limits. The internal space of a semiconductor power module can be filled with cooling fluid around, above, and below the semiconductor device. The power module design described enables actual immersion cooling and efficient heat removal of the semiconductor power module.

[0016] According to a further embodiment of the semiconductor power module, the housing is electrically insulating with a predetermined dielectric strength and is made from or includes polyetheretherketone, PEEK, and / or polytetrafluoroethylene, PTFE, ceramic, and / or epoxy-based molded compounds.

[0017] According to further embodiments of the semiconductor power module, the control terminals and / or second metallic components are made of or include copper and / or aluminum and / or corresponding alloys. The second metallic component can also function as a power busbar for, for example, the source potential or emitter potential. In addition, the second metallic component can be zinc-plated and / or include a nickel surface finish, for example.

[0018] According to a further embodiment of the semiconductor power module, the first metal component is made of or comprises molybdenum and / or copper and / or aluminum and / or corresponding alloys. The first metal component can further function as a base plate of the semiconductor power module. In addition, the first metal component can be zinc-plated and / or may include a nickel surface finish, for example.

[0019] According to a further embodiment, the semiconductor power module comprises at least one metal spring that electrically connects the respective electrical contacts of the corresponding semiconductor power devices to a control terminal. Such a metal spring element can provide a stable and reliable spring-loaded contact between the control terminal and the respective semiconductor power device. The metal spring connects one or more upper power terminals of the respective semiconductor device to the control terminal and / or a second metal component.

[0020] A spring-loaded contact can be formed by one or more metal springs, sleeves, and / or plungers, made from or including at least one of stainless steel, copper, or copper alloys, which may or may not have a gold and / or nickel-plated surface. Each spring-loaded contact or metal spring may have an overall length of 5 mm to 20 mm with respect to its extended length, e.g., 9.6 mm or 12.8 mm. The diameter of the metal spring or spring-loaded contact may have a value of 5 mm to 0.5 mm, e.g., 3.89 mm, 3.18 mm, or 1 mm for the landing portion and 1.27 mm for the plunger. The metal spring or spring-loaded contact can be configured to form an electrical contact with a resistance of less than 100 mΩ, e.g., 20 mΩ, at stroke forces greater than 10 g, e.g., 120 g or 25 g. Furthermore, the metal spring or spring-loaded contact can be configured to carry a current of 1A to 200A, for example, 9A.

[0021] The semiconductor power module preferably comprises at least one transistor device and an additional further metal spring connecting the upper side of the control terminal of the transistor device. Further, the semiconductor power module can comprise an electrical circuit component made, for example, from a printed circuit board (PCB), which is connected to the metal spring connecting the control terminals and feeds power from the semiconductor power module to the metal spring. The external PCB power supply output of the control terminal is preferably sealed, for example, between a first metal component and an insulating housing.

[0022] According to a further embodiment of the semiconductor power module, the inlet and outlet of the housing are arranged on the same side of the housing such that an internal flow chamber and the inlet and outlet form a U-shaped flow path within the semiconductor power module. Alternatively, the inlet and / or outlet can vary according to the application. The inlet and / or outlet can be arranged on different sides or faces of the semiconductor power module and do not form a U-shape.

[0023] According to a further embodiment of the semiconductor power module, a given surface structure of the first metal component is formed on the upper side of the first metal component facing the semiconductor power device and includes a plurality of ribs and grooves formed alternately in a lateral direction perpendicular to the stacking direction. The first metal component can also function, for example, as a power bus bar for the drain or collector potential, and the given surface structure can include the aforementioned and / or other machined structures in order to design the flow of the coolant.

[0024] Alternatively or additionally, a given surface structure of the second metal component can also include protrusions and / or recesses in order to provide a predetermined flow characteristic of the coolant within the semiconductor power module during operation. Such a surface structure will be formed on the bottom side of the second metal component facing the semiconductor power device. Alternatively, the surface structure of the second metal component can be provided to achieve a flat surface completely or mainly at its bottom.

[0025] According to a further embodiment, the semiconductor power module comprises at least one sealing member arranged between the housing and the first and / or second metal components with respect to the stacking direction such that the inner region of the housing is sealed against the outer region of the housing. Such a sealing member can be realized, for example, as a rubber ring gasket. Alternatively or additionally, the interface between the metal component and the insulating housing is sealed by an adhesive.

[0026] According to a further embodiment of the semiconductor power module, the second metal component includes a recess formed geometrically in cooperation with the control terminal on its bottom side facing the semiconductor device, and the control terminal is arranged inside the recess between the second metal component and the respective semiconductor power device with respect to the stacking direction. Such a configuration enables a stable and reliable arrangement of the electrical connection between the control terminal and the electrical contact or terminal of the respective semiconductor power device. In addition, the structure described above can be formed relatively flat.

[0027] According to an embodiment, the semiconductor power package comprises an embodiment of the semiconductor power module described and a cooling fluid configured to flow around each semiconductor power device through the internal flow chamber of the semiconductor power module during operation. The cooling fluid can be selected to include an insulation resistance of 10 kV / mm or more, such as 14 kV / mm, 17 kV / mm, 27 kV / mm or 30 kV / mm, which can be measured, for example, by the D1816 method or the IEC60156 method.

[0028] Alternatively or additionally, the cooling fluid can be selected to include a thermal conductivity in the range of 0.05 W / m·K to 0.5 W / m·K at room temperature, such as 0.06 W / m·K or 0.12 W / m·K or 0.15 W / m·K.

[0029] Alternatively or additionally, the cooling fluid can be selected to include boiling points above 100°C at a pressure of 1 atmosphere, for example 128°C, 165°C, 165°C, 167°C or above, or above 300°C for single-phase liquid cooling, and 40°C to 125°C, for example 49°C, 61°C, 76°C, or 98°C for two-phase cooling involving liquid and gas phases.

[0030] Alternatively or additionally, the cooling fluid can be selected to have a viscosity of 50 cSt or less, for example, 20 cSt or 0.77 cSt, 0.71 cSt, 0.41 cSt, 0.38 cSt, or 0.40 cSt.

[0031] Alternatively or additionally, the cooling fluid can be selected to contain a specific heat of 700 J / kg·K or higher, for example, 1040 J / kg·K, 1128 J / kg·K, 1140 J / kg·K, 1220 J / kg·K, 1183 J / kg·K, 1103 J / kg·K, 1300 J / kg·K, 1880 J / kg·K, or 2170 J / kg·K.

[0032] The finding of this disclosure is that the aforementioned parameters of the coolant have a beneficial effect on heat dissipation when used in the flow chamber described for immersed semiconductor power modules.

[0033] As a result of the described semiconductor power package including embodiments of a semiconductor power module, the features and characteristics of the described semiconductor power module are also disclosed with respect to the semiconductor power package, and vice versa.

[0034] According to one embodiment, a method for manufacturing an embodiment of a semiconductor power module includes providing one or more semiconductor power devices, a first metal component and a second metal component, and providing a hollow housing and control terminals. The method further includes coupling each semiconductor power device and the first metal component to each other such that the first metal component is coupled to the first side or bottom side of each corresponding semiconductor power device. The method further includes coupling each semiconductor power device and the second metal component to each other such that the second metal component is coupled to the second side or top side of the semiconductor power device, opposite to the first side. The method further includes electrically coupling the control terminals to the respective electrical contacts of the corresponding semiconductor power devices, for example, by one or more metal springs. The method further includes coupling the housing to both the first and second metal components such that the housing surrounds the semiconductor power devices and the housing and the first and second metal components form an internal flow chamber around one or more semiconductor power devices that is filled with cooling fluid during the operation of the semiconductor power module.

[0035] The above-described manufacturing method allows for the production of the semiconductor power module described above. The order of the manufacturing steps described is variable and not predetermined. For example, it is preferable that the coupling of the control terminals is performed prior to coupling the second metal component as the top cover of the housing. However, as a result of the described method being configured to produce embodiments of the semiconductor power module, the described features and characteristics of the semiconductor power module are also disclosed with respect to the manufacturing method, and vice versa.

[0036] Each described embodiment of a semiconductor power module with immersion cooling combines electrical circuits and thermal management within a single module. Immersion cooling allows for direct, bilateral cooling of semiconductor devices without the need for any external coolers. However, external coolers may be added to further improve heat dissipation. An insulating cooling fluid can flow within the power module in direct contact with heat-generating components, particularly semiconductors, or as close as possible to the heat source of heat generation, in order to extract heat through the smallest possible heat conduction path. Heat can be transferred convectively in a single phase, such as a liquid, or can benefit from phase changes, such as vaporization, to improve heat extraction, and a given fluid flow allows for higher flow rates and higher heat extraction capabilities.

[0037] As a result, thermal resistance can be significantly reduced compared to conventional cooling settings. Semiconductor power modules achieve miniaturization and high performance in conjunction with immersion cooling. Many components within a semiconductor power module are designed with multiple functionalities.

[0038] a. Electrical contacts to semiconductor devices may have pin, fin, or channel shapes to allow for better cooling. Therefore, electrical contacts can be formed by pressure contacts, such as spring-loaded contacts.

[0039] b. The semiconductor power module may have a base plate with embedded fins or channels for cooling.

[0040] c. The semiconductor power module enclosure is designed to function as a manifold for flow distribution, a cooling channel, and an insulator, and to provide mechanical integrity.

[0041] d. The refrigerant or coolant may be selected from insulating refrigerants or coolants to act as dielectric containment.

[0042] e. The surface may include a given surface structure that has been treated to enhance nucleation when a two-phase cooling strategy is used.

[0043] Illustrative embodiments are described below with reference to schematic drawings and reference numbers. The drawings are as follows: [Brief explanation of the drawing]

[0044] [Figure 1] This is a perspective view showing one embodiment of a semiconductor power module or its components. [Figure 2] This is a perspective view showing one embodiment of a semiconductor power module or its components. [Figure 3] This is a perspective view showing one embodiment of a semiconductor power module or its components. [Figure 4] This is a perspective view showing one embodiment of a semiconductor power module or its components. [Figure 5] This is a perspective view showing one embodiment of a semiconductor power module or its components. [Figure 6] This is a perspective view showing one embodiment of a semiconductor power module or its components. [Figure 7] This is a perspective view showing one embodiment of a semiconductor power module or its components. [Figure 8] This is a perspective view showing one embodiment of a semiconductor power module or its components. [Figure 9] The characteristics of a semiconductor power module or its components are shown in different diagrams. [Figure 10] The characteristics of a semiconductor power module or its components are shown in different diagrams. [Figure 11] The characteristics of a semiconductor power module or its components are shown in different diagrams. [Figure 12] The characteristics of a semiconductor power module or its components are shown in different diagrams. [Figure 13]The characteristics of a semiconductor power module or its components are shown in different diagrams. [Figure 14] The characteristics of a semiconductor power module or its components are shown in different diagrams. [Figure 15] The characteristics of a semiconductor power module or its components are shown in different diagrams. [Figure 16] Figures 1 to 15 are flowcharts showing the manufacturing method of semiconductor power modules. [Modes for carrying out the invention]

[0045] The attached drawings are included to provide further understanding. Please understand that the embodiments shown in the drawings are illustrative representations and are not necessarily drawn to scale. The same reference numerals indicate elements or components having the same function. In the drawings, to the extent that elements or components correspond to each other with respect to their function, their descriptions are not repeated for each of the following figures. For clarity, elements may not appear with their corresponding reference numerals in all of the figures, in some cases.

[0046] Figures 1 to 8 show different embodiments of a semiconductor power module 1 or its components. Figures 9 to 15 show different characteristics of a semiconductor power module 1 or its components. A semiconductor power module 1 (hereinafter referred to as module 1) can form a subunit of a semiconductor power stack or package together with a given coolant or refrigerant and / or multiple modules 1. Module 1 comprises multiple semiconductor power devices 2 (hereinafter referred to as device 2) enclosed in a housing 4, each device 2 having its own electrical terminals or contacts for operation. According to the illustrated embodiment, module 1 comprises eight devices 2 (see Figures 3 and 4). For example, device 2 can be implemented as an IGBT, MOSFET / MISFET, or BIG T, each having power terminals and / or control terminals, e.g., drain, source and gate, or collector, emitter and gate, respectively.

[0047] Module 1 further comprises a first metal component 11 coupled to each first side 5 of device 2. With respect to the stacking direction R of module 1, the first side 5 may also be referred to as the bottom side of each device 2. Thus, each bottom side of device 2 is attached to the top surface 15 of the first metal component 11 (see Figure 2). The first metal component 11 includes a given surface structure 13 having a plurality of ribs 17 and grooves 18 formed alternately with respect to a transverse direction B perpendicular to the stacking direction R (see Figures 2 to 4). The surface structure 13 is formed to guide the cooling fluid along device 2 in a predetermined manner.

[0048] Module 1 further comprises a second metal component 12 coupled to a second side 6 of each device 2 opposite to the first side 5 with respect to the stacking direction R. With respect to the stacking direction R, the second side 6 may also be referred to as the upper side of each device 2. According to the illustrated embodiment of Module 1, the second metal component 12 is coupled to the upper side 6 of device 2 by control terminals 10 and electrical contacts 7 of device 2, which include a plurality of metal springs 8 (see Figures 3-4, 7-8, and the inset in Figure 3).

[0049] The second metal component 12 includes a given surface structure 14 for guiding the cooling fluid along the device 2. The second metal component 12 forms the top cover of module 1, and the surface structure 14 is substantially flat except for recesses 20 for receiving control terminals 10 and one or more bored holes for assembling module 1. Alternatively, the surface structure 14 of the second metal component 12 may include pin fins or any other protruding or recessed structures that are beneficial for cooling.

[0050] The control terminal 10 is formed as a printed circuit board and is electrically coupled to the electrical contacts 7 of eight devices 2 by corresponding metal springs 23 configured to connect to the metal springs 8 of the devices 2. The control terminal 10 is located in a corresponding recess 20 of the second metal component 12, which is formed on the bottom surface 16 of the second metal component 12 (see inset in Figure 7).

[0051] Module 1 further comprises a hollow housing 4 formed as a rectangular frame including four side walls and an inner wall 47 to realize and restrict a predetermined guided flow of cooling fluid within Module 1 during operation. The housing 4 includes an inlet 43 and an outlet 44 for allowing cooling fluid to enter and exit the housing 4. The inlet 43 and outlet 44 are formed in the same side wall 45 of the housing 4, essentially creating a U-shaped internal flow path (see Figures 5 and 6).

[0052] The housing 4 is coupled to both the first metal component 11 and the second metal component 12, surrounding the device 2, so that the housing 4, as well as the first and second metal components 11 and 12, form an internal flow chamber around the device 2, which is configured to be filled with cooling fluid during the operation of module 1. The housing 4 includes a periphery 41 with a plurality of creepage ribs 42 above the inlet 43 and outlet 44 and below the second metal component 12.

[0053] The first metal component 11 provides a bottom cover, and the second metal component 12 provides a top cover that is attached to the housing 4. For stable and reliable sealing of the internal volume of the housing 4 relative to the external volume, the module includes sealing elements 9 located in the sealing recesses 19 and 46, respectively, of the first metal component 11 and the top of the housing 4 (see Figures 2 to 8). To further control the internal flow of the cooling fluid, module 1 further includes two flow guide plates 21 located inside the respective grooves of the first metal component 11 on both sides of the device 2 with respect to the lateral direction A. The flow guide plates 21 include a given recess 22 that allows for predetermined inflow and outflow of the cooling fluid relative to the volume surrounding the device 2. It is a known fact that such guide elements have a beneficial effect on the dissipation of heat generated by the device 2 during the operation of module 1.

[0054] Figure 1 shows the assembled overall structure of Module 1. It basically has a rectangular parallelepiped shape, and Device 2 is sandwiched between two metal plates, which are formed by a first metal component 11 and a second metal component 12, as an emitter and collector connection or source and drain connection. The gate contact, along with an auxiliary emitter or auxiliary source, is realized by a control terminal 10, similar to a PCB circuit. Figure 8 shows an exploded view of the components of Module 1.

[0055] Module 1 enables internal flow of the cooling fluid and comprises several components having multiple functions. The first metal component 11 forms a base plate (see Figure 2), which also forms the collector plate of Module 1, and has fins or channels that stop below the device 2 or extend beyond the semiconductor chip or device 2. Thus, according to one embodiment, the groove 18 may be formed so as not to form a channel below the device 2. Thus, the cooling fluid flows between the base plate ribs 17, then collides with the walls and bends, and flows above the device 2 between the electrical contacts 7 and the upper contacts formed by the metal springs 8 and 23.

[0056] Device 2 may be pre-packaged, e.g., PCB embedded or molded, to increase the contact surface area and for the upper contact 7, such as a pin-shaped pressure contact, which can be realized as a pogo pin known on the market. Device 2 may also be pre-packaged to have metal contacts suitable for mounting to a first metal component 11 or a second metal component 12, for example, in terms of thermal expansion or solder / sintering ability or ease of manufacture. In addition, pre-packaging may be performed to provide sufficient isolation around the edges of Device 2 or the bonding ends of Device 2, or to prevent potential contamination in the cooling fluid.

[0057] To distribute the cooling flow uniformly, the manifold portions at the inlet 43 and outlet 44 can be considered together with the flow distribution pieces formed by the flow guide plate 21 (see Figure 4). The dimensions of the opening or recess 22 can be adjusted, for example, to ensure flow uniformity or to promote flow rate on the hotter device 2. The dimensions can also be adjusted to prevent fluid backflow in the boiling flow region in the case of two-phase cooling.

[0058] The housing 4 is attached to the first metal component 11 and sealed with a gasket and / or permanent adhesive to realize a sealing member 9. The housing 4 includes recesses realized by ribs 42 on the outside to accommodate creepage distance requirements for the blocking voltage of module 1 and sufficient electrical insulation. The housing 4 also contributes to generating a three-dimensional flow of cooling fluid within module 1, which generates a thermally developing flow at a higher flow rate in order to increase the local Nusselt number.

[0059] The control terminal 10 forms a gate runner (auxiliary emitter) that is mounted from one side to an emitter plate realized by a second metal component 12. On the other side, it contacts the gate on the device 2 using metal spring contacts 8 and 23. The emitter plate or the second metal component 12 has a groove to mount the control terminal 10 (see inset in Figure 7) to form a flat surface and to ensure proper sealing after the complete assembly of module 1.

[0060] The coolant or fluid is insulating with a sufficient dielectric breakdown field depending on the given module voltage class, and can be selected from a wide variety of options, such as transformer oil, insulating oil, or design fluids for single-phase or two-phase cooling.

[0061] Figures 9 to 15 show the characteristics of Module 1. The performance of Module 1 was calculated by COMSOL simulation (see Figures 9 to 12), and was performed using the following boundary conditions as an example. ●The characteristics in the Novec 7500 datasheet are used for cooling fluids. In this regard, it is referred to in the 3M® Novec® Thermal Transfer Products line cards “Thermal Transfer Applications Using 3M® Novec® Engineered Fluids” and “3M® Novec® 7500 Engineered Fluid”. ● The inlet temperature of the cooling fluid is 40°C. ● The outlet pressure of the cooling fluid is 1 atmosphere. ● The top plate 11 and bottom plate 12 are made of Al alloy. ● The device is a Si-IGBT, which is sintered onto a Mo plate on the bottom (collector) side and then sintered onto another Mo plate (emitter side) to which pogo pins are attached. ● The pogo pins are made of Cu / Be alloy. ●The enclosure 4 is made of PEEK. ●Thermal resistance is calculated based on a power loss of 100W per device 2. ●The flow rate of the cooling fluid will be changed.

[0062] Figure 9 shows 3D models of two adjacent devices 2 simulated in COMSOL. Figure 10 shows the velocity profiles in cross-section. High velocities are present, particularly in the center of device 2, as well as at the inlet and outlet. Low velocities are present at the walls or edges.

[0063] Figure 11 shows the heat flux at the interface between the solid and the fluid. Higher heat flux is present near device 2, particularly at the interface between the metal spring 8 and device 2. Figure 12 shows the corresponding temperature profile, where the highest temperature is consequently present in device 2.

[0064] In the immersion cooling concept of Module 1, eight chips or Device 2 can be packaged as subunits to maintain the same level of scalability. However, the number of Device 2 per Module 1 may vary depending on the application or yield. Nevertheless, the simulation results scale to an equal number of Device 2 within four partitioned Module 1, i.e., 8 chips per Module 1 for a total of 32 chips.

[0065] In Figures 13 and 14, the characteristics V1 and V2 of module 1 are V conThis is compared to a conventional configuration represented by . The conventional configuration has coolers mounted on both sides of the power module, and each cooler has a pressure drop between the coolant inlet and coolant outlet, as shown in Figure 13. Here, the pressure P of the cooling fluid (e.g., mbar) is plotted against the flow rate FR of the cooling fluid (e.g., l / min). The function curve V1 in Figure 13 is assigned to module 1 described. It is possible to electrically connect four immersion cooling modules 1, each having eight devices 2, in parallel, with fluid connections being two in parallel and two in series. With such a configuration, the total pressure drop remains the same as the pressure drop of a single module 1 at the same flow rate. A significant reduction in pumping requirements is expected due to the much lower pressure drop in the immersion cooling modules 1 (see Figure 13). Thus, the configuration of module 1 may not require additional pumps and may result in less pumping being used.

[0066] The function curve V2 in Figure 14 is assigned to module 1, which is described therein, for example, the thermal resistance R of K / kW. th However, it is plotted against the flow rate FR of the cooling fluid, for example, l / min, and represents the thermal resistance from the joint to the inlet. Thermal resistance R of immersion cooling module 1 th This is the conventional setting V con This is approximately 80% lower than that of the previous model and can be used to increase the current rating of device 2.

[0067] In the conventional configuration described above, two coolers can be used for bifacial cooling, but the emitter-side cooler typically extracts less than 20% of the total heat. According to the relative heat extraction ratios on both sides of each device 2 as shown in Figure 15, the configuration of module 1 described allows for balanced heat dissipation at the top (function curve V4) and bottom (function curve V3) of device 2.

[0068] Figures 2 to 8 show perspective views of the manufacturing process for assembling an embodiment of Module 1 as shown in Figure 1. Such a process can be formed according to a flowchart of a method for manufacturing an embodiment of Module 1 as shown in Figure 16.

[0069] In step S1, the components of module 1 can be provided. In a further step S2, the device 2 is bonded to the upper surface 15 of the first metal component 11, for example by sintering, so that the first metal component 11 is bonded to each of the bottom sides 5 of the device 2.

[0070] Device 2 may be provided with a metal spring 8 that can be attached to the upper side of Device 2, for example, by direct soldering and / or using an intermediate metal plate.

[0071] In a further step S3, the sealing member 9 is placed in the corresponding recess 19 of the first metal component 11, and the flow guide plates 21 are placed on both sides of the device 2.

[0072] In a further step S4, the housing 4 is coupled to the first metal component 11 so as to surround the device 2.

[0073] In a further step S5, an additional sealing member 9 is placed in the corresponding recess 46 of the housing 4, and the control terminal 10 is attached to the device 2 such that the metal spring 23 of the control terminal 10 is connected to the metal spring 8 of the electrical contact 7 or to the device 2, respectively.

[0074] In a further step S6, the second metal component 12 is coupled to the housing 4 such that the control terminal 10 is located in the corresponding recess 20 on the bottom surface 16 of the second metal component 12. The first metal component 11 and the second metal component 12 can be attached to the housing 4, for example, by screwing and / or adhesive. Thus, the second metal component 12 is coupled to the top 6 opposite the bottom side of the device 2 with respect to the stacking direction R.

[0075] Module 1 is assembled such that the housing 4 and the first metal component 11 and the second metal component 12 form an internal flow chamber around the device 2, which is filled with cooling fluid during the operation of Module 1.

[0076] The described module 1, which incorporates the concept of immersion cooling, not only eliminates the need for an external cooler but also provides improved heat extraction from both sides of device 2 with a single cooling component. Direct contact with the coolant or insulating refrigerant results in compactness and higher cooling efficiency, which can enable the application of new semiconductor devices with high current density, such as SiC, and reduce temperature limits in future HVDC applications. In addition, the configuration of module 1 can be leveraged to reduce semiconductor area, cooling requirements, and overall module dimensions in a variety of applications. [Explanation of Symbols]

[0078] Reference sign 1. Semiconductor power module 2. Semiconductor Power Devices 4 cabinets 41 Periphery of the enclosure 42 Surface creepage ribs of the enclosure 43 Inlet of the enclosure 44 Outlet of the enclosure 45 Side walls of the enclosure 46. ​​Sealing recess of the housing 47. Inner wall of the enclosure 5. First side of semiconductor power device 6. Second side of semiconductor power device 7. Electrical contacts of semiconductor power devices 8. Metal springs in semiconductor power devices 9 Sealing member 10 Control terminals 11 First Metal Component 12 Second Metallic Component 13 Surface structure of the first component 14. Surface structure of the second component 15 Upper surface of the first metal component 16 Bottom surface of the second metal component 17. Ribs of the first metal component 18 Grooves of the first metal component 19 Sealing recess of the first metal component 20 Recess of the second metal component 21 Flow Information Board 22 Recess of flow guide board 23. Metal springs of control terminals A Lateral direction of semiconductor power module B. Lateral direction of semiconductor power module HE heat extraction FR flow rate P pressure R Stacking direction of semiconductor power modules R th thermal resistance S(i) Steps in the manufacturing method of a semiconductor power module V(i) Function curve V con Conventional function curves

Claims

1. A semiconductor power module (1), - At least one semiconductor power device (2) having electrical terminals, - comprising a first metal component (11) coupled to a first side (5) of the semiconductor power device (2), wherein the first metal component (11) includes a given surface structure (13) for guiding a cooling fluid along the semiconductor power device (2), and the semiconductor power module (1) further comprises - With respect to the stacking direction (R) of the semiconductor power module (1), a second metal component (12) is coupled to the second side (6) of the semiconductor power device (2) opposite to the first side (5), wherein the second metal component (12) includes a given surface structure (14) for guiding the cooling fluid along the semiconductor power device (2), and the semiconductor power module (1) further comprises, - A control terminal (10) electrically coupled to the electrical contacts (7, 8) of the semiconductor power device (2), A semiconductor power module (1) comprising: a hollow housing (4) that restricts a predetermined internal flow of the cooling fluid, wherein the hollow housing (4) includes an inlet (43) and an outlet (44) for allowing the cooling fluid to enter and exit the hollow housing (4), the hollow housing (4) is coupled to both the first metal component (11) and the second metal component (12) and surrounds the semiconductor power device (2), the hollow housing (4) and the first metal component (11) and the second metal component (12) form an internal flow chamber around the semiconductor power device (2) that is configured to be filled with the cooling fluid during the operation of the semiconductor power module (1), the first metal component (11) forming a plate-shaped bottom of the semiconductor power module (1) with respect to the stacking direction (R), and / or the second metal component (12) forming a plate-shaped top of the semiconductor power module (1) with respect to the stacking direction (R).

2. It comprises two or more semiconductor power devices (2), each having an electrical terminal, The first metal component (11) is coupled to the first side (5) of each of the semiconductor power devices (2), and the second metal component (12) is coupled to the second side (6) of each of the semiconductor power devices (2) on the opposite side of the first side (5) with respect to the stacking direction (R). The control terminal (10) is electrically coupled to the respective electrical contacts (7, 8) of the semiconductor power device (2). The semiconductor power module (1) according to claim 1, wherein the hollow housing (4) surrounds the semiconductor power device (2), and the hollow housing (4) and the first metal component (11) and the second metal component (12) form an internal flow chamber around the semiconductor power device (2) that is configured to be filled with the cooling fluid during operation of the semiconductor power module (1).

3. The semiconductor power module (1) according to claim 1 or 2, wherein the hollow housing (4) comprises an insulating material having a predetermined dielectric strength and is made from or comprises polyetheretherketone, PEEK, polytetrafluoroethylene, PTFE, ceramic and / or epoxy-based molded compounds.

4. The semiconductor power module (1) according to claim 1 or 2, wherein the control terminal (10) and / or the second metal component (12) are made of copper and / or aluminum, or comprise copper and / or aluminum.

5. The semiconductor power module (1) according to claim 1 or 2, wherein the first metal component (11) is made of molybdenum and / or copper and / or aluminum, or comprises molybdenum and / or copper and / or aluminum.

6. The semiconductor power module (1) according to claim 1 or 2, comprising at least one metal spring that electrically connects each of the corresponding electrical contacts (7) of the semiconductor power device (2) to the control terminal (10).

7. The semiconductor power module (1) according to claim 1 or 2, wherein the inlet (43) and outlet (44) of the hollow housing (4) are arranged on the same side (45) of the hollow housing (4) such that the internal flow chamber and the inlet (43) and outlet (44) form a U-shaped flow path within the semiconductor power module (1).

8. The semiconductor power module (1) according to claim 1 or 2, wherein the given surface structure (13) of the first metal component (11) includes a plurality of ribs (17) and grooves (18) formed alternately in the transverse directions (A, B) perpendicular to the stacking direction (R) on the side (15) facing the semiconductor power device (2).

9. The semiconductor power module (1) according to claim 1 or 2, comprising at least one sealing member (9) disposed between the hollow housing (4) and the first metal component (11) and / or the second metal component (12) with respect to the stacking direction (R) such that the inner region of the hollow housing (4) is sealed to the outer region of the hollow housing (4).

10. The semiconductor power module (1) according to claim 1 or 2, wherein each of the semiconductor power devices (2) is formed as at least one of a metal oxide semiconductor field-effect transistor (MOSFET) and an insulated gate bipolar transistor (IGBT).

11. The semiconductor power module (1) according to claim 1 or 2, wherein the second metal component (12) includes a recess (20) formed on the side (16) facing the semiconductor power device (2) in geometric cooperation with the control terminal (10), and the control terminal (10) is positioned inside the recess (20) between the second metal component (12) and each of the semiconductor power devices (2) with respect to the stacking direction (R).

12. It is a semiconductor power package, - A semiconductor power module (1) according to claim 1 or 2, A semiconductor power package comprising: a cooling fluid configured to flow around each of the semiconductor power devices (2) through the internal flow chamber of the semiconductor power module (1) during operation.

13. The semiconductor power package according to claim 12, wherein the cooling fluid includes at least one of the following: dielectric strength of 10 kV / mm or more, thermal conductivity in the range of 0.05 W / mK to 0.5 W / mK, boiling point exceeding 100°C at a pressure of 1 atmosphere, viscosity of 50 cSt or less, and specific heat of 700 J / kg·K or more.

14. A method for manufacturing a semiconductor power module (1) according to claim 1 or 2, - To provide at least one semiconductor power device (2) having electrical terminals, - To provide a first metal component (11) having a given surface structure (13) for guiding a cooling fluid along the semiconductor power device (2), - The method includes providing a second metal component (12) having a given surface structure (14) for guiding a cooling fluid along the semiconductor power device (2), wherein the first metal component (11) forms a plate-shaped bottom portion of the semiconductor power module (1) with respect to the stacking direction (R), and / or the second metal component (12) forms a plate-shaped top portion with respect to the stacking direction (R), and the method further includes, - The semiconductor power device (2) and the first metal component (11) are coupled to each other such that the first metal component (11) is coupled to the first side (5) of the semiconductor power device (2), - The semiconductor power device (2) and the second metal component (12) are coupled to each other such that the second metal component (12) is coupled to the second side (6) of the semiconductor power device (2) on the opposite side (5) of the semiconductor power device (2) with respect to the stacking direction (R) of the semiconductor power module (1), - A control terminal (10) is provided, and the control terminal (10) is electrically coupled to the electrical contact (7) of the semiconductor power device (2), - The method includes providing a hollow housing (4) that restricts a predetermined internal flow in order to guide the cooling fluid, wherein the hollow housing (4) includes an inlet (43) and an outlet (44) for allowing the cooling fluid to enter and exit the hollow housing (4), and the method further includes A method comprising coupling the hollow housing (4) to both the first metal component (11) and the second metal component (12) such that the hollow housing (4) surrounds the semiconductor power device (2), and the hollow housing (4) and the first metal component (11) and the second metal component (12) form an internal flow chamber around the semiconductor power device (2) that is filled with the cooling fluid during the operation of the semiconductor power module (1).

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