Molecular layer deposition liners for 3D NAND

Abstract

An exemplary method of semiconductor processing may include etching one or more features partially through a stack of layers formed on a substrate. The method may include stopping the etch before completely penetrating the stack of layers formed on the substrate. The method may include forming a layer of carbon-containing material along the stack of layers on the substrate. The layer of carbon-containing material may include a metal. The method may include etching one or more features completely through the stack of layers on the substrate.

Claims

1. Partially etching one or more features through a stack of layers formed on a substrate. Stopping the etching before completely penetrating the stack of layers formed on the substrate, Forming a layer of carbon-containing material along the stack of the layers on the substrate, wherein forming the layer of carbon-containing material is To provide a first molecular species in order to form a first molecular layer, To provide a second molecular species for forming a second molecular layer on the first molecular layer, and To form a metal layer on the second molecular layer, to provide a metal-containing precursor, and to form a layer of carbon-containing material comprising one or more cycles of the above, A semiconductor processing method comprising completely etching one or more features through a stack of the layers on the substrate.

2. Forming the layer of the carbon-containing material means To provide the first molecular species that bonds with the stack of layers formed on the substrate, and The semiconductor processing method according to claim 1, comprising one or more cycles of providing the second molecular species that binds to the first molecular species.

3. The semiconductor processing method according to claim 2, wherein the first molecular species is characterized by a head group comprising an amine, diamine, diol, or dithiol.

4. The semiconductor processing method according to claim 3, wherein the second molecular species includes oxygen.

5. The semiconductor processing method according to claim 2, wherein the metal-containing precursor binds to the second molecular species.

6. Forming the layer of the carbon-containing material means The semiconductor processing method according to claim 5, further comprising alternately supplying an oxygen-containing material and the metal-containing precursor.

7. Forming the layer of the carbon-containing material means To provide the first molecular species, and The semiconductor processing method according to claim 5, comprising one or more further cycles of providing the second molecular species.

8. The semiconductor processing method according to claim 1, wherein the layer of carbon-containing material is formed to a thickness of approximately 5 nm or more.

9. The semiconductor processing method according to claim 1, wherein the formation of the carbon-containing material layer is carried out at a substrate temperature of approximately 200°C or lower.

10. The semiconductor processing method according to claim 1, wherein the stack of the layers comprises alternating layers of oxide and nitride or polysilicon, and the etching rate through the oxide and nitride or polysilicon is higher than the etching rate through the carbon-containing material.

11. The semiconductor processing method according to claim 1, wherein the metal comprises one or more of aluminum, titanium, zinc, hafnium, tantalum, or zirconium.

12. Etching one or more features through a stack of layers formed on a substrate, wherein the stack of layers includes alternating layers containing silicon oxide, and the stack of layers includes more than 100 layers, and etching one or more features. Stopping the etching before completely penetrating the stack of layers formed on the substrate, Forming a layer of carbon-containing material along the stack of the layers on the substrate, wherein forming the layer of carbon-containing material is To provide a first molecular species in order to form a first molecular layer, To provide a second molecular species for forming a second molecular layer on the first molecular layer, and To form a metal layer on the second molecular layer, to provide a metal-containing precursor, and to form a layer of carbon-containing material comprising one or more cycles of the above, A semiconductor processing method comprising completely etching one or more features through a stack of the layers on the substrate.

13. Forming the layer of the carbon-containing material means To provide the first molecular species that bonds with the stack of layers formed on the substrate, and The semiconductor processing method according to claim 12, comprising one or more cycles of providing the second molecular species that binds to the first molecular species.

14. Forming the layer of the carbon-containing material means The semiconductor processing method according to claim 13, further comprising providing a metal-containing precursor that binds to either the first molecular species or the second molecular species.

15. Forming the layer of the carbon-containing material means The semiconductor processing method according to claim 14, further comprising alternately supplying an oxygen-containing material and the metal-containing precursor.

16. The semiconductor processing method according to claim 14, wherein the metal comprises one or more of aluminum, titanium, zinc, hafnium, or zirconium.

17. Forming the layer of the carbon-containing material means To provide the first molecular species, and The semiconductor processing method according to claim 14, comprising one or more further cycles of providing the second molecular species.

18. The semiconductor processing method according to claim 12, further comprising removing the layer of carbon-containing material from the stack of layers formed on the substrate.

19. Etching one or more features through a stack of layers formed on a substrate, wherein the stack of layers includes alternating layers containing silicon oxide, and the stack of layers includes more than 100 layers, and etching one or more features. Stopping the etching before completely penetrating the stack of layers formed on the substrate, Conformally forming a layer of carbon-containing material along the stack of the layers on the substrate, wherein forming the layer of carbon-containing material is To provide a first molecular species in order to form a first molecular layer, To provide a second molecular species for forming a second molecular layer on the first molecular layer, and To form a metal layer on the second molecular layer, to provide a metal-containing precursor, and to conformally form a layer of carbon-containing material comprising one or more cycles of the above, A semiconductor processing method comprising completely etching one or more features through a stack of the layers on the substrate.

20. Forming the layer of the carbon-containing material means To provide the first molecular species that bonds with the stack of layers formed on the substrate, and The semiconductor processing method according to claim 19, comprising one or more cycles of providing the second molecular species that binds to the first molecular species.

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