Method of manufacturing electronic devices

Abstract

To provide a back-grinding adhesive film that can suppress adhesive residue on an electronic component side when the adhesive film is peeled off the electronic component after a back grinding process.SOLUTION: A back-grinding adhesive film (50) is used for protecting the surface of an electronic component (30) and comprises a substrate layer (10) and an ultraviolet-ray curable adhesive resin layer (20) that is disposed on one surface of the substrate layer (10). The back-grinding adhesive film (50) is such that the elongation-to-break of the adhesive resin layer after ultraviolet-ray curing is from 20% to 200% inclusive.SELECTED DRAWING: Figure 1

Description

[Technical Field] 【0001】 The present invention relates to an adhesive film for backgrinding and a method for manufacturing an electronic device. [Background technology] 【0002】 In the manufacturing process of electronic devices, during the grinding process of electronic components, an adhesive film is attached to the circuit-forming surface of the electronic component to fix it in place and prevent damage to the electronic component. Generally, adhesive films of this type use a film in which an adhesive resin layer is laminated onto a base film. 【0003】 With advancements in high-density packaging technology, there is a demand for thinner semiconductor wafers and other electronic components, requiring, for example, processing to a thickness of 50 μm or less. One such thin-wall processing method is the pre-dicing method, which involves forming grooves of a predetermined depth on the surface of an electronic component before grinding, and then performing grinding to separate the electronic component into individual pieces. Another method is the pre-stealth method, which involves irradiating the inside of an electronic component with a laser to create a modified region before grinding, and then performing grinding to separate the electronic component into individual pieces. 【0004】 Examples of adhesive films for pre-dicing and pre-stealth methods include those described in Patent Document 1 (Japanese Patent Publication No. 2014-75560) and Patent Document 2 (Japanese Patent Publication No. 2016-72546). 【0005】 Patent Document 1 describes a surface protection sheet having an adhesive layer on a substrate, which satisfies the following requirements (a) to (d). (a) The Young's modulus of the above substrate is 450 MPa or higher. (b) The storage modulus of the adhesive layer at 25°C is 0.10 MPa or higher. (c) The storage modulus of the adhesive layer at 50°C is 0.20 MPa or less. (d) The thickness of the adhesive layer is 30 μm or more. Patent Document 1 states that such a surface protection sheet can prevent contamination of the protected surface of the workpiece by suppressing the intrusion of water (sludge intrusion) into the protected surface of the workpiece through the gap formed when the workpiece is fractured during the back surface grinding process. 【0006】 Patent Document 2 describes an adhesive tape for protecting the surface of a semiconductor wafer, comprising a base resin film and a radiation-curable adhesive layer formed on at least one side of the base resin film, wherein the base resin film has at least one rigid layer with a tensile modulus of elasticity of 1 to 10 GPa, and the peeling force at a peeling angle of 30° after radiation curing of the adhesive layer is 0.1 to 3.0 N / 25 mm. Patent Document 2 states that such an adhesive tape for protecting the surface of a semiconductor wafer can suppress kerf shift of individual semiconductor chips during the back grinding process of a semiconductor wafer to which a pre-dicing method or pre-stealth method is applied, and can process the semiconductor wafer without damaging or contaminating it. [Prior art documents] [Patent Documents] 【0007】 [Patent Document 1] Japanese Patent Publication No. 2014-75560 [Patent Document 2] Japanese Patent Publication No. 2016-72546 [Overview of the Initiative] [Problems that the invention aims to solve] 【0008】 According to the inventors' research, it has become clear that in manufacturing processes for electronic devices using methods such as pre-dicing or pre-stealth, adhesive residue tends to remain on the electronic component side when peeling off the adhesive film from the electronic component after the backgrinding process. 【0009】 The present invention has been made in view of the above circumstances, and provides an adhesive film for backgrinding that can suppress adhesive residue on the electronic component side when peeling the adhesive film off the electronic component after the backgrinding process. [Means for solving the problem] 【0010】 The inventors diligently conducted research to achieve the above objectives. As a result, they discovered that in an adhesive film comprising a base layer and an ultraviolet-curable adhesive resin layer, by using an adhesive resin layer whose elongation at break after ultraviolet curing is within a specific range, it is possible to suppress adhesive residue on the electronic component side when peeling the adhesive film from the electronic component after the backgrinding process, thus completing the present invention. 【0011】 According to the present invention, the following adhesive film for backgrinding and a method for manufacturing an electronic device are provided. 【0012】 [1] A backgrind adhesive film comprising a base layer and an ultraviolet-curable adhesive resin layer provided on one side of the base layer, and used to protect the surface of an electronic component, An adhesive film for backgrinding, wherein the elongation at break of the above-mentioned adhesive resin layer after UV curing is 20% to 200%. [2] In the adhesive film for backgrind described in [1] above, The above adhesive resin layer is an adhesive film for backgrinding, comprising a (meth)acrylic resin having polymerizable carbon-carbon double bonds in its molecule and a photoinitiator. [3] In the adhesive film for backgrind described in [1] or [2] above, The above electronic components are adhesive films for backgrinding that are half-cut or have a modified layer formed on them. [4] In the adhesive film for backgrind described in any one of the above [1] to [3], An adhesive film for back grinding, wherein the thickness of the adhesive resin layer is 10 μm or more and 100 μm or less. [5] In the adhesive film for back grinding according to any one of the above [1] to [4], The resin constituting the base material layer contains one or more selected from polyolefin, polyester, polyamide, polyacrylate, polymethacrylate, polyvinyl chloride, polyvinylidene chloride, polyimide, polyetherimide, ethylene-vinyl acetate copolymer, polyacrylonitrile, polycarbonate, polystyrene, ionomer, polysulfone, polyethersulfone, and polyphenylene ether. An adhesive film for back grinding. [6] Step (A) of preparing a structure including an electronic component having a circuit formation surface and an adhesive film bonded to the circuit formation surface side of the electronic component; Step (B) of back grinding the surface of the electronic component opposite to the circuit formation surface side; Step (C) of irradiating the adhesive film with ultraviolet rays and then removing the adhesive film from the electronic component; A method for manufacturing an electronic device, comprising at least: A method for manufacturing an electronic device, wherein the adhesive film is the adhesive film for back grinding according to any one of the above [1] to [5]. [7] In the method for manufacturing an electronic device according to the above [6], The step (A) is: At least one step (A1) selected from step (A1-1) of half-cutting the electronic component and step (A1-2) of irradiating the electronic component with a laser to form a modified layer on the electronic component; After the step (A1), step (A2) of attaching the adhesive film for back grinding to the circuit formation surface side of the electronic component; A method for manufacturing an electronic device including. 【Advantages of the Invention】 【0013】 According to the present invention, it is possible to provide an adhesive film for backgrinding that can suppress adhesive residue on the electronic component side when peeling the adhesive film off the electronic component after the backgrinding process. [Brief explanation of the drawing] 【0014】 [Figure 1] This is a schematic cross-sectional view showing an example of the structure of an adhesive film according to an embodiment of the present invention. [Figure 2] This is a schematic cross-sectional view showing an example of a method for manufacturing an electronic device according to an embodiment of the present invention. [Modes for carrying out the invention] 【0015】 Embodiments of the present invention will be described below with reference to the drawings. In all drawings, similar components are denoted by the same reference numerals, and their descriptions are omitted as appropriate. Also, the drawings are schematic diagrams and do not correspond to the actual dimensional ratios. Unless otherwise specified, the numerical range "A~B" represents A or greater and B or less. In this embodiment, "(meth)acrylic" means acrylic, methacrylic, or both acrylic and methacrylic. 【0016】 1. Adhesive film Figure 1 is a schematic cross-sectional view showing an example of the structure of an adhesive film 50 according to an embodiment of the present invention. As shown in Figure 1, the adhesive film 50 for backgrinding according to this embodiment comprises a base layer 10 and an ultraviolet-curable adhesive resin layer 20 provided on one side of the base layer 10, and is used to protect the surface of an electronic component 30, wherein the elongation at break of the adhesive resin layer 20 after ultraviolet curing is 20% or more and 200% or less. Here, the elongation at break of the adhesive resin layer 20 after UV curing was measured using the following method. (method) A sample for measurement is prepared by laminating a layer of adhesive resin film 20 with the same thickness and composition as the adhesive backgrinding adhesive film 50 according to this embodiment onto the corona-treated surface of an ethylene-vinyl acetate copolymer extruded film (MFR: 1.7 g / 10 min, vinyl acetate content: 9% by mass, thickness: 140 μm), and further laminating a release film (separator) such as a polyethylene terephthalate film treated with silicone release on the adhesive resin layer 20 side. Examples of lamination methods include the following: A silicone-release-treated polyethylene terephthalate film is subjected to a release treatment process. An adhesive resin layer 20 is then formed on the silicone-release-treated polyethylene terephthalate film, and a corona-treated ethylene-vinyl acetate copolymer film is then laminated onto the adhesive resin layer 20 to obtain a laminate. The resulting laminate is then heated in an oven at 40°C for 3 days to allow it to mature. Next, the adhesive resin layer 20 of the resulting laminate is irradiated with ultraviolet light of a main wavelength of 365 nm using a high-pressure mercury lamp at an intensity of 100 mW / cm² in an environment of 25°C, starting from the ethylene-vinyl acetate copolymer film side. 2 The UV radiation level is 1080 mJ / cm². 2 The adhesive resin layer 20 is photocured by irradiation. Next, the laminate with the photocured adhesive resin layer 20 is cut to a length of 110 mm and a width of 10 mm, and the polyethylene terephthalate film, which acts as a separator, is peeled off the laminate. Next, the adhesive resin layer 20 is chucked together with the ethylene-vinyl acetate copolymer film using a tensile testing machine (e.g., Shimadzu Corporation, Autograph AGS-X) so that the initial chuck distance Lo is 50 mm. The sample is pulled at a speed of 30 mm / min, and the point at which fracture is observed in the adhesive resin layer 20 by visual inspection is defined as the fracture point, and the chuck distance at that time is defined as L. The elongation at fracture (%) is calculated by (L-Lo) / Lo × 100 (%). 【0017】 As described above, our investigations have revealed that, for example, in the manufacturing process of electronic devices using methods such as pre-dicing or pre-stealth, adhesive residue tends to remain on the electronic component side when peeling the adhesive film from the electronic component after the backgrinding process. The reason for this is unclear, but unlike the backgrinding process for normal electronic components, it is necessary to peel off the adhesive backgrinding film 50 from the fractured electronic component, which is thought to make it easier for adhesive residue to remain on the edges of the fractured electronic component. The inventors diligently conducted research to achieve the above objectives. As a result, they discovered for the first time that, in an adhesive film 50 comprising a base layer 10 and an ultraviolet-curable adhesive resin layer 20, by using an adhesive resin layer 20 whose elongation at break after ultraviolet curing is within the above range, it is possible to suppress adhesive residue on the electronic component 30 when peeling the adhesive film 50 from the electronic component 30 after the backgrinding process. 【0018】 In the adhesive film 50 according to this embodiment, the elongation at break of the adhesive resin layer 20 after UV curing is 20% or more and 200% or less. However, from the viewpoint of designing an adhesive resin layer 20 that does not easily leave adhesive residue by giving the adhesive resin layer 20 appropriate toughness, it is preferably 30% or more, more preferably 40% or more, preferably 150% or less, more preferably 100% or less, and even more preferably 80% or less. The elongation at break of the adhesive resin layer 20 after UV curing can be controlled within the above range, for example, by controlling the types and proportions of adhesive resin, crosslinking agent, and photoinitiator constituting the adhesive resin layer 20, as well as the types and proportions of each monomer in the adhesive resin. 【0019】 The overall thickness of the adhesive film 50 according to this embodiment is preferably 50 μm to 600 μm, more preferably 50 μm to 400 μm, and even more preferably 50 μm to 300 μm, based on a balance between mechanical properties and handling. 【0020】 The adhesive film 50 according to this embodiment may have other layers between each layer, such as a surface-absorbing resin layer, an adhesive layer, or an antistatic layer (not shown), as long as the effects of the present invention are not impaired. The surface-absorbing resin layer can improve the surface-absorbing properties of the adhesive film 50. The adhesive layer can improve the adhesion between each layer. The antistatic layer can improve the antistatic properties of the adhesive film 50. 【0021】 The adhesive film 50 according to this embodiment is used to protect the surface of an electronic component 30 in the manufacturing process of an electronic device, and more specifically, it is used as a backgrind tape to protect the circuit-forming surface 30A (i.e., the circuit surface including the circuit pattern) of the electronic component 30 in the grinding process (also called the backgrinding process), which is one of the manufacturing processes of an electronic device. Specifically, the adhesive film 50 is applied to protect the circuit-forming surface 30A of the electronic component 30, and the surface opposite to the circuit-forming surface 30A is ground. In particular, in the manufacturing process of an electronic device using a pre-dicing method or a pre-stealth method, adhesive residue tends to remain on the electronic component 30 when the adhesive film 50 is peeled off from the electronic component 30 after the backgrinding process, so the adhesive film 50 according to this embodiment can be suitably applied to the manufacturing process of an electronic device using a pre-dicing method or a pre-stealth method. In the pre-dicing method, the electronic component 30 is half-cut as shown in Figure 1. In the pre-stealth method, the electronic component 30 has a modified layer formed by laser irradiation (a region inside the electronic component 30 that has been internally processed by a laser). 【0022】 Next, each layer constituting the adhesive film 50 according to this embodiment will be described. 【0023】 <Base material layer> The base layer 10 is a layer provided for the purpose of improving the handling properties, mechanical properties, heat resistance, and other characteristics of the adhesive film 50. The base layer 10 is not particularly limited as long as it has sufficient mechanical strength to withstand the external forces applied when processing the electronic component 30, but a resin film is one example. Examples of resins constituting the base layer 10 include one or more selected from the following: polyolefins such as polyethylene, polypropylene, poly(4-methyl-1-pentene), and poly(1-butene); polyesters such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; polyamides such as nylon-6, nylon-66, and polymetaxylene adipamide; (meth)acrylic resins; polyvinyl chloride; polyvinylidene chloride; polyimide; polyetherimide; ethylene-vinyl acetate copolymer; polyacrylonitrile; polycarbonate; polystyrene; ionomer; polysulfone; polyethersulfone; and polyetheretherketone. Among these, from the viewpoint of improving mechanical properties and transparency, one or more selected from polypropylene, polyethylene terephthalate, polyethylene naphthalate, polyamide, polyimide, ethylene-vinyl acetate copolymer, and polybutylene terephthalate are preferred, and one or more selected from polyethylene terephthalate and polyethylene naphthalate are more preferred. 【0024】 The base layer 10 may be a single layer or two or more layers. Furthermore, the resin film used to form the base layer 10 may be a stretched film or a film stretched in one or two axes, but from the viewpoint of improving the mechanical strength of the base layer 10, it is preferable that it be a film stretched in one or two axes. From the viewpoint of suppressing warping of electronic components after grinding, it is preferable that the base layer 10 is pre-annealed. The base layer 10 may be surface-treated to improve adhesion with other layers. Specifically, corona treatment, plasma treatment, undercoat treatment, primer coat treatment, etc., may be performed. 【0025】 From the viewpoint of obtaining good film properties, the thickness of the substrate layer 10 is preferably 20 μm or more and 250 μm or less, more preferably 30 μm or more and 200 μm or less, and even more preferably 50 μm or more and 150 μm or less. 【0026】 <Adhesive resin layer> The adhesive film 50 according to this embodiment comprises an ultraviolet-curable adhesive resin layer 20. The adhesive resin layer 20 is a layer provided on one side of the base layer 10, and is a layer that comes into contact with and adheres to the circuit forming surface 30A of the electronic component 30 when the adhesive film 50 is attached to the circuit forming surface 30A of the electronic component 30. 【0027】 The adhesives constituting the adhesive resin layer 20 include (meth)acrylic adhesives, silicone adhesives, urethane adhesives, olefin adhesives, and styrene adhesives. Among these, (meth)acrylic adhesives, which use (meth)acrylic resin as the base polymer, are preferred because they allow for easy adjustment of adhesive strength. 【0028】 Furthermore, it is preferable to use an ultraviolet crosslinking type adhesive that reduces its adhesive strength when exposed to ultraviolet light as the adhesive agent constituting the adhesive resin layer 20. The adhesive resin layer 20, composed of an ultraviolet crosslinking adhesive, undergoes crosslinking upon irradiation with ultraviolet light, significantly reducing its adhesive strength, thus making it easier to peel the electronic component 30 from the adhesive film 50. 【0029】 Examples of (meth)acrylic resins included in (meth)acrylic adhesives include homopolymers of (meth)acrylic acid ester compounds and copolymers of (meth)acrylic acid ester compounds and comonomers. Examples of (meth)acrylic acid ester compounds include methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, hydroxyethyl (meth)acrylate, hydroxypropyl (meth)acrylate, dimethylaminoethyl (meth)acrylate, and glycidyl (meth)acrylate. These (meth)acrylic acid ester compounds may be used individually or in combination of two or more. Furthermore, examples of comonomers constituting (meth)acrylic copolymers include vinyl acetate, (meth)acrylonitrile, styrene, (meth)acrylic acid, itaconic acid, (meth)acrylamide, methylol(meth)acrylamide, and maleic anhydride. These comonomers may be used individually or in combination of two or more. 【0030】 Examples of UV-crosslinkable (meth)acrylic adhesives include adhesives containing a (meth)acrylic resin having polymerizable carbon-carbon double bonds in its molecule and a photoinitiator, and obtained by crosslinking the (meth)acrylic resin with a crosslinking agent as needed. UV-crosslinkable (meth)acrylic adhesives may further contain low molecular weight compounds having two or more polymerizable carbon-carbon double bonds in their molecule. 【0031】 (Meth)acrylic resins having polymerizable carbon-carbon double bonds in their molecules are obtained specifically as follows: First, a monomer having an ethylenic double bond is copolymerized with a copolymerizable monomer having a functional group (P). Next, the functional group (P) contained in this copolymer is reacted with a monomer having a functional group (Q) that can undergo addition reactions, condensation reactions, etc., with the functional group (P), while leaving the double bond in the monomer intact, thereby introducing a polymerizable carbon-carbon double bond into the copolymer molecule. 【0032】 As monomers having an ethylenic double bond, one or more can be used from among alkyl acrylate monomers such as methyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, butyl (meth)acrylate, and ethyl (meth)acrylate, vinyl esters such as vinyl acetate, and monomers having an ethylenic double bond such as meth)acrylonitrile, meth)acrylamide, and styrene. 【0033】 Examples of copolymerizable monomers having the above-mentioned functional group (P) include (meth)acrylic acid, maleic acid, 2-hydroxyethyl (meth)acrylate, glycidyl (meth)acrylate, N-methylol(meth)acrylamide, and (meth)acryloyloxyethyl isocyanate. These may be used individually or in combination of two or more. Preferably, the ratio of monomers having an ethylenically double bond to copolymerizable monomers having a functional group (P) is 70-99% by mass for monomers having an ethylenically double bond and 1-30% by mass for copolymerizable monomers having a functional group (P). More preferably, the ratio is 80-95% by mass for monomers having an ethylenically double bond and 5-20% by mass for copolymerizable monomers having a functional group (P). Examples of monomers having the above-mentioned functional group (Q) include monomers similar to copolymerizable monomers having the above-mentioned functional group (P). 【0034】 When introducing a polymerizable carbon-carbon double bond into a copolymer of a monomer having an ethylenically double bond and a copolymerizable monomer having a functional group (P), it is desirable to use combinations of functional groups (P) and (Q) that readily undergo addition reactions, such as carboxyl groups and epoxy groups, carboxyl groups and aziridyl groups, or hydroxyl groups and isocyanate groups. Furthermore, any reaction that readily introduces a polymerizable carbon-carbon double bond, such as a condensation reaction between a carboxylic acid group and a hydroxyl group, may be used, not limited to addition reactions. 【0035】 Examples of low molecular weight compounds having two or more polymerizable carbon-carbon double bonds in their molecules include tripropylene glycol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, tetramethylolmethane tetraacrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and ditrimethylolpropane tetraacrylate. One or more of these may be used. The amount of low molecular weight compound having two or more polymerizable carbon-carbon double bonds in its molecule added is preferably 0.1 to 20 parts by mass, and more preferably 5 to 18 parts by mass, per 100 parts by mass of the (meth)acrylic resin. 【0036】 Examples of photoinitiators include benzoin, isopropylbenzoin ether, isobutylbenzoin ether, benzophenone, Michler ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, acetophenone diethyl ketal, benzyldimethyl ketal, 1-hydroxycyclohexylphenyl ketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 2-benzyl-2-dimethylamino-4'-morpholinobutyrophenone, 2,2-dimethoxy-2-phenylacetophenone, and 2-dimethylamino-2-(4-methylbenzyl)-1-(4-morpholin-4-ylphenyl)butan-1-one. These may be used individually or in combination of two or more. The amount of photoinitiator added is preferably 0.1 to 15 parts by mass, more preferably 1 to 10 parts by mass, and even more preferably 4 to 10 parts by mass, per 100 parts by mass of the (meth)acrylic resin. 【0037】 A crosslinking agent may be added to the above UV-curing adhesive. Examples of crosslinking agents include epoxy compounds such as sorbitol polyglycidyl ether, polyglycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, and diglycerol polyglycidyl ether; aziridine compounds such as tetramethylolmethane-tri-β-aziridinyl propionate, trimethylolpropane-tri-β-aziridinyl propionate, N,N'-diphenylmethane-4,4'-bis(1-aziridine carboxyamide), and N,N'-hexamethylene-1,6-bis(1-aziridine carboxyamide); and isocyanate compounds such as tetramethylene diisocyanate, hexamethylene diisocyanate, and polyisocyanate. The above UV-curing adhesive may be of solvent type, emulsion type, hot melt type, etc. 【0038】 The crosslinking agent content is generally preferably within a range where the number of functional groups in the crosslinking agent does not exceed the number of functional groups in the (meth)acrylic resin. However, it may be included in excess as needed, such as when new functional groups are generated during the crosslinking reaction or when the crosslinking reaction is slow. From the viewpoint of improving the balance with the heat resistance and adhesion strength of the adhesive resin layer 20, the crosslinking agent content in the (meth)acrylic adhesive is preferably 0.1 parts by mass or more and 15 parts by mass or less, and more preferably 0.5 parts by mass or more and 5 parts by mass or less, per 100 parts by mass of (meth)acrylic resin. 【0039】 The adhesive resin layer 20 can be formed, for example, by applying an adhesive coating liquid onto the base layer 10. Conventional coating methods such as the roll coater method, reverse roll coater method, gravure roll method, bar coat method, comma coater method, and die coater method can be used to apply the adhesive coating solution. There are no particular restrictions on the drying conditions of the applied adhesive, but generally, it is preferable to dry it at a temperature range of 80 to 200°C for 10 seconds to 10 minutes. More preferably, it is dried at 80 to 170°C for 15 seconds to 5 minutes. In order to sufficiently promote the crosslinking reaction between the crosslinking agent and the (meth)acrylic resin, the adhesive coating solution may be heated at 40 to 80°C for about 5 to 300 hours after the drying is complete. 【0040】 In the adhesive film 50 according to this embodiment, the thickness of the adhesive resin layer 20 is preferably 10 μm or more and 100 μm or less, and more preferably 10 μm or more and 50 μm or less. When the thickness of the adhesive resin layer 20 is within the above range, a good balance is achieved between adhesion to the surface of the electronic component 30 and ease of handling. 【0041】 2. Method of manufacturing electronic devices Figure 2 is a schematic cross-sectional view showing an example of a method for manufacturing an electronic device according to an embodiment of the present invention. The method for manufacturing the electronic device according to this embodiment comprises, for example, at least the following three steps. (A) A step of preparing a structure 100 comprising an electronic component 30 having a circuit forming surface 30A and an adhesive film 50 attached to the circuit forming surface 30A side of the electronic component 30. (B) A step (B) of backgrinding the side of the electronic component 30 opposite to the circuit formation surface 30A side, (C) Steps to remove the adhesive film 50 from the electronic component 30 after irradiating the adhesive film 50 with ultraviolet light. Furthermore, the adhesive film 50 according to this embodiment is used as the adhesive film 50. The manufacturing method of the electronic device according to this embodiment is characterized by using the adhesive film 50 according to this embodiment as a so-called backgrind tape when grinding the back surface of the electronic component 30. The following describes each step in the manufacturing method of the electronic device according to this embodiment. 【0042】 (Process (A)) First, a structure 100 is prepared, comprising an electronic component 30 having a circuit-forming surface 30A, and an adhesive film 50 attached to the circuit-forming surface 30A side of the electronic component 30. Such a structure 100 can be manufactured, for example, by peeling off the release film from the adhesive resin layer 20 of the adhesive film 50, exposing the surface of the adhesive resin layer 20, and attaching the circuit forming surface 30A of the electronic component 30 onto the adhesive resin layer 20. 【0043】 Here, the conditions for attaching the circuit-forming surface 30A of the electronic component 30 to the adhesive film 50 are not particularly limited, but for example, the temperature can be 20 to 80°C, the pressure 0.05 to 0.5 MPa, and the attachment speed 0.5 to 20 mm / second. 【0044】 The process (A) preferably further includes at least one process (A1) selected from the steps of half-cutting the electronic component 30 (A1-1) and irradiating the electronic component 30 with a laser to form a modified layer on the electronic component 30 (A1-2), and a process (A2) after process (A1) to attach a backgrind adhesive film 50 to the circuit forming surface 30A side of the electronic component 30. As described above, the adhesive film 50 according to this embodiment can be suitably used in the manufacturing process of electronic devices using methods such as the pre-dicing method or the pre-stealth method. For this reason, a manufacturing method that involves the above steps (A1-1), which is the pre-dicing method, or the above step (A1-2), which is the pre-stealth method, is preferred. 【0045】 In step (A2), the adhesive film 50 can be heated and attached to the circuit-forming surface 30A of the electronic component 30. This ensures good adhesion between the adhesive resin layer 20 and the electronic component 30 for an extended period. The heating temperature is not particularly limited, but is, for example, 60 to 80°C. 【0046】 The process of attaching the adhesive film 50 to electronic components may be done manually, but it can generally be done using a device called an automatic adhesive machine, which is equipped with a roll of adhesive film. 【0047】 The electronic component 30 to be attached to the adhesive film 50 is not particularly limited, but it is preferably an electronic component 30 having a circuit forming surface 30A. Examples include semiconductor wafers, epoxy molded wafers, molded panels, molded array packages, semiconductor substrates, etc., and semiconductor wafers and epoxy molded wafers are preferred. Furthermore, semiconductor wafers include, for example, silicon wafers, sapphire wafers, germanium wafers, germanium-arsenide wafers, gallium-phosphorus wafers, gallium-arsenide-aluminum wafers, gallium-arsenide wafers, and lithium tantalate wafers, but silicon wafers are preferably used. Epoxy molded wafers include wafers manufactured by the eWLB (Embedded Wafer Level Ball Grid Array) process, which is one of the methods for manufacturing fan-out type WLPs. The semiconductor wafer and epoxy molded wafer having a circuit formation surface are not particularly limited, but are used, for example, those on which circuits such as wiring, capacitors, diodes, or transistors are formed on the surface. The circuit formation surface may also be plasma treated. 【0048】 The circuit-forming surface 30A of the electronic component 30 may be an uneven surface, for example, by having bump electrodes. Furthermore, bump electrodes are, for example, joined to electrodes formed on a mounting surface when mounting an electronic device, thereby forming an electrical connection between the electronic device and the mounting surface (such as a printed circuit board). Examples of bump electrodes include ball bumps, printed bumps, stud bumps, plated bumps, and pillar bumps. In other words, bump electrodes are usually convex electrodes. These bump electrodes may be used individually or in combination of two or more types. The height and diameter of the bump electrodes are not particularly limited, but are preferably 10 to 400 μm, and more preferably 50 to 300 μm, respectively. The bump pitch is also not particularly limited, but is preferably 20 to 600 μm, and more preferably 100 to 500 μm. Furthermore, the metal species constituting the bump electrode is not particularly limited, and examples include solder, silver, gold, copper, tin, lead, bismuth, and alloys thereof. However, the adhesive film 50 is preferably used when the bump electrode is a solder bump. These metal species may be used individually or in combination of two or more. 【0049】 (Process (B)) Next, the side of the electronic component 30 opposite to the circuit formation surface 30A (also called the back surface) is back-ground. Here, backgrinding means thinning an electronic component to a predetermined thickness without damaging it. For example, the structure 100 is fixed to the chuck table of a grinding machine, and the back surface (non-circuit-formed surface) of an electronic component is ground. 【0050】 In this back grinding operation, the electronic component 30 is ground down until its thickness is less than or equal to the desired thickness. The thickness of the electronic component before grinding is appropriately determined by the diameter, type, etc., of the electronic component 30, and the thickness of the electronic component 30 after grinding is appropriately determined by the size of the resulting chip, the type of circuit, etc. Furthermore, if the electronic component 30 is half-cut or has a modified layer formed by laser irradiation, the electronic component 30 is separated into individual pieces by process (B) as shown in Figure 1. 【0051】 The back surface grinding method is not particularly limited, but known grinding methods can be used. Each grinding process can be performed while cooling the electronic component and grinding wheel with water. If necessary, a dry polishing process, which does not use grinding water, can be performed at the end of the grinding process. After the back surface grinding is completed, chemical etching is performed as necessary. Chemical etching is performed by immersing the electronic component, with an adhesive film 50 attached, in an etching solution selected from the group consisting of an acidic aqueous solution consisting of one or a mixture of hydrofluoric acid, nitric acid, sulfuric acid, acetic acid, etc., or an alkaline aqueous solution such as a potassium hydroxide aqueous solution or a sodium hydroxide aqueous solution. The etching is performed for the purpose of removing distortions that have occurred on the back surface of the electronic component, further thinning of the electronic component, removal of oxide films, etc., and pretreatment when forming electrodes on the back surface. The etching solution is appropriately selected according to the above purpose. 【0052】 (Process (C)) Next, the adhesive film 50 is irradiated with ultraviolet light and then removed from the electronic component 30. Before removing the adhesive film from the electronic component 30, the electronic component 30 may be mounted on dicing tape or dicing tape with die-attach film. The operation of removing the adhesive film 50 from the electronic component 30 may be performed manually, but it can generally be performed by a device called an automatic peeling machine. The surface of the electronic component 30 after the adhesive film 50 has been removed may be cleaned as needed. Cleaning methods include wet cleaning such as water cleaning and solvent cleaning, and dry cleaning such as plasma cleaning. In the case of wet cleaning, ultrasonic cleaning may also be used. These cleaning methods can be appropriately selected depending on the degree of contamination on the surface of the electronic component. 【0053】 In process (C), for example, 200 mJ / cm² is applied to the adhesive film 50. 2 More than 2000mJ / cm 2 The adhesive resin layer 20 is photocured by irradiating it with ultraviolet light at the following doses to reduce its adhesive strength, after which the adhesive film 50 is removed from the electronic component 30. Furthermore, ultraviolet irradiation can be performed, for example, using ultraviolet light with a dominant wavelength of 365 nm using a high-pressure mercury lamp. The intensity of ultraviolet irradiation is, for example, 50 mW / cm². 2 More than 500mW / cm 2 The following applies: 【0054】 (Other processes) After performing steps (A) to (C), further steps such as mounting the obtained semiconductor chip onto a circuit board may be carried out. These steps can be performed based on publicly known information. 【0055】 Although preferred embodiments of the present invention have been described above, these are merely examples, and various other configurations can also be adopted. [Examples] 【0056】 The present invention will be specifically described below with reference to examples and comparative examples, but the present invention is not limited thereto. Details regarding the preparation of the adhesive film are as follows: 【0057】 <Base material layer> Substrate layer 1: Polyethylene terephthalate film (manufactured by Toyobo Co., Ltd., product name: E7180, thickness: 50 μm, corona treated on one side) 【0058】 Base layer 2: Laminated film consisting of low-density polyethylene film / polyethylene terephthalate film / low-density polyethylene film (total thickness: 110 μm) Low-density polyethylene film (density: 0.925 kg / m²) is attached to both sides of a polyethylene terephthalate film (manufactured by Toray Industries, Inc., product name: Lumirror S10, thickness: 50 μm). 3 The laminated film was obtained by laminating a layer (thickness: 30 μm). Corona treatment was performed on one side of the resulting laminated film. 【0059】 Base layer 3: Laminated film consisting of polyethylene terephthalate film / ethylene vinyl acetate copolymer film / acrylic film (total thickness: 145 μm) A polyethylene terephthalate film (manufactured by Toyobo Co., Ltd., product name: E7180, thickness: 50 μm) and an ethylene-vinyl acetate copolymer film (manufactured by Mitsui Dow Polychemical Co., Ltd., MFR: 2.5 g / 10 min) (thickness: 70 μm) were laminated by applying corona treatment to the side of the ethylene-vinyl acetate copolymer film that was bonded to the polyethylene terephthalate film. Furthermore, corona discharge treatment was also applied to the side of the ethylene-vinyl acetate copolymer film that was opposite the polyethylene terephthalate film. Next, the release surface of the mold-release treated polyethylene terephthalate film (separator) was coated with the following acrylic resin coating solution for the substrate to a dry thickness of 20 μm and dried. This was then laminated to the above polyethylene terephthalate film / ethylene vinyl acetate copolymer film via the ethylene vinyl acetate copolymer film, and aged (40°C, 3 days). Subsequently, the separator was peeled off to obtain the substrate layer 3. 【0060】 <Acrylic resin coating solution for substrates> 0.5 parts by mass of 4,4'-azobis-4-cyanovaleric acid (manufactured by Otsuka Chemical Co., Ltd., product name: ACVA) was used as a polymerization initiator. 74 parts by mass of butyl acrylate, 14 parts by mass of methyl methacrylate, 9 parts by mass of 2-hydroxyethyl methacrylate, 2 parts by mass of methacrylic acid, 1 part by mass of acrylamide, and 3 parts by mass of an aqueous solution of polyoxyethylene nonylpropenylphenyl phenyl ether sulfate ammonium (manufactured by Daiichi Kogyo Seiyaku Co., Ltd., product name: Aqualon HS-1025) were emulsion-polymerized in deionized water at 70°C for 9 hours. After polymerization was complete, the pH was adjusted to 7 with ammonia water to obtain an acrylic polymer aqueous emulsion with a solid content of 42.5%. Next, 100 parts by mass of this acrylic polymer aqueous emulsion was adjusted to a pH of 9 or higher using aqueous ammonia, and 0.75 parts by mass of an aziridine crosslinking agent (Chemitite PZ-33, manufactured by Nippon Shokubai Chemicals Co., Ltd.) and 5 parts by mass of diethylene glycol monobutyl ether were added to obtain a coating solution for the substrate. 【0061】 <(meth)acrylic resin solution> (meth)acrylic resin solution 1: 49 parts by mass of ethyl acrylate, 20 parts by mass of 2-ethylhexyl acrylate, 21 parts by mass of methyl acrylate, 10 parts by mass of glycidyl methacrylate, and 0.5 parts by mass of a benzoyl peroxide polymerization initiator were reacted in 65 parts by mass of toluene and 50 parts by mass of ethyl acetate at 80°C for 10 hours. After the reaction was complete, the resulting solution was cooled, and 25 parts by mass of xylene, 5 parts by mass of acrylic acid, and 0.5 parts by mass of tetradecyldimethylbenzylammonium chloride were added to the cooled solution and reacted at 85°C for 32 hours while blowing in air to obtain (meth)acrylic resin solution 1. 【0062】 (meth)acrylic resin solution 2: 77 parts by mass of n-butyl acrylate, 16 parts by mass of methyl methacrylate, 16 parts by mass of 2-hydroxyethyl acrylate, and 0.3 parts by mass of t-butyl peroxy-2-ethylhexanoate as a polymerization initiator were reacted in 20 parts by mass of toluene and 80 parts by mass of ethyl acetate at 85°C for 10 hours. After the reaction was complete, the solution was cooled, and 30 parts by mass of toluene, 7 parts by mass of methacryloyloxyethyl isocyanate (manufactured by Showa Denko, product name: Karenz MOI), and 0.05 parts by mass of dibutyltin dilaurate were added, and the mixture was reacted at 85°C for 12 hours while blowing in air to obtain (meth)acrylic resin solution 2. 【0063】 (meth)acrylic resin solution 3: 30 parts by mass of ethyl acrylate, 11 parts by mass of methyl acrylate, 26 parts by mass of 2-ethylhexyl acrylate, 7 parts by mass of 2-hydroxyethyl mecrylate, and 0.8 parts by mass of a benzoyl peroxide polymerization initiator were reacted in 7 parts by mass of toluene and 50 parts by mass of ethyl acetate at 80°C for 9 hours. After the reaction was complete, the resulting solution was cooled, and 25 parts by mass of toluene was added to the cooled solution to obtain (meth)acrylic resin solution 3. 【0064】 <Adhesive film for evaluating elongation at break> An adhesive coating solution for the adhesive resin layer was prepared by adding the additives shown in Table 1 to an acrylic resin solution. This coating solution was applied to the release-treated surface of a silicone release-treated polyethylene terephthalate film (separator), and dried at 120 °C for 3 minutes to form an adhesive resin layer with a thickness of 20 μm. Next, the corona-treated surface of a corona-treated ethylene-vinyl acetate copolymer extruded film (MFR: 1.7 g / 10 min, vinyl acetate content: 9% by mass, thickness: 140 μm) was laminated onto the adhesive resin layer to obtain a laminate. Subsequently, the obtained laminate was heated in an oven at 40 °C for 3 days for aging. 【0065】 <Adhesive Film for Adhesion Strength and Pre-Dicing Evaluation> An adhesive coating solution for the adhesive resin layer was prepared by adding the additives shown in Table 1 to an acrylic resin solution. This coating solution was applied to a silicone release-treated polyethylene terephthalate film (separator). Then, it was dried at 120 °C for 3 minutes to form an adhesive resin layer with a thickness of 20 μm, and laminated onto the base material layer. For base material layers 1 and 2, they were laminated onto the corona-treated surface. For base material layer 3, the separator was peeled off and laminated onto the acrylic layer side. The obtained laminate was heated in an oven at 40 °C for 3 days for aging. 【0066】 <Evaluation Method> (1) Elongation at break of the adhesive resin layer after ultraviolet curing From the ethylene-vinyl acetate copolymer extruded film side of the adhesive film for elongation at break evaluation, ultraviolet light with a main wavelength of 365 nm was irradiated onto the adhesive resin layer using a high-pressure mercury lamp at an irradiation intensity of 100 mW / cm 2 with an ultraviolet dose of 1080 mJ / cm 2 Then, it was cut into a length of 110 mm and a width of 10 mm, and the polyethylene terephthalate film as the separator was peeled off from the laminate. Next, the adhesive resin layer was chucked together with the ethylene-vinyl acetate copolymer extruded film using a tensile testing machine (Shimadzu Corporation, product name: Autograph AGS-X) so that the initial chuck distance Lo was 50 mm. The sample was pulled at a speed of 30 mm / min, and the point at which fracture was observed in the adhesive resin layer visually was defined as the fracture point, and the chuck distance at that time was defined as L. The elongation at fracture (%) was calculated using the formula (L-Lo) / Lo × 100 (%). Evaluation was performed with N=2, and the average value was used as the measured value. 【0067】 (2) Evaluation of adhesive strength Adhered wafer: The mirror surface of a silicon mirror wafer (SUMCO, 4-inch single-sided mirror wafer) was cleaned with ozone using a UV ozone cleaning device (Technovision, UV-208) (ozone treatment time: 60 seconds). After that, the wafer mirror surface was wiped with ethanol and used as the substrate wafer. 【0068】 Adhesion strength before UV irradiation: Under conditions of 23°C and 50% RH, an adhesive film for adhesion strength evaluation was cut to a width of 50 mm, the separator was removed, and the adhesive film was attached to the mirror surface of the wafer using a hand roller, via its adhesive resin layer, and left for 1 hour. After the period, one end of the adhesive film was clamped using a tensile testing machine (Shimadzu Corporation, product name: Autograph AGS-X), and the adhesive film was peeled from the surface of the wafer at a peeling angle of 180 degrees and a peeling speed of 300 mm / min. The stress at that time was measured and converted to N / 25 mm to determine the adhesive strength. The evaluation was performed with N=2, and the average value was used as the measured value. Adhesion strength after UV irradiation: Under conditions of 23°C and 50% RH, an adhesive film for adhesion strength evaluation was cut to a width of 50 mm, the separator was peeled off, and the adhesive film was attached to the mirror surface of the wafer using a hand roller, via its adhesive resin layer, and left for 1 hour. After standing, under conditions of 25°C, UV light with a main wavelength of 365 nm was irradiated at an intensity of 100 mW / cm using a high-pressure mercury lamp. 2 The adhesive film has an ultraviolet radiation level of 1080 mJ / cm². 2The film was irradiated with a light source. Subsequently, using a tensile testing machine (Shimadzu Corporation, product name: Autograph AGS-X), one end of the adhesive film was clamped, and the adhesive film was peeled from the surface of the adherend wafer at a peeling angle of 180 degrees and a peeling speed of 300 mm / min. The stress at that time was measured and converted to N / 25 mm to determine the adhesive strength. The evaluation was performed with N=2, and the average value was used as the measured value. 【0069】 Adhesive residue evaluation: The adherend wafer after the above delamination was visually observed and evaluated according to the following criteria. ○: No adhesive residue was found. ×: Items in which adhesive residue was found. 【0070】 (3) Evaluation of the pre-dicing method Evaluation wafer 1: Using a dicing saw, the mirror surface of a mirror wafer (manufactured by KST World Co., Ltd., 8-inch mirror wafer, diameter: 200±0.5 mm, thickness: 725±50 μm, single-sided mirror) was half-cut to obtain evaluation wafer 1. (Blade: ZH05-SD3500-N1-70-DD, chip size: 5 mm × 8 mm, cutting depth: 58 μm, blade rotation speed: 30000 rpm). Observation of evaluation wafer 1 with an optical microscope revealed a kerf width of 35 μm. 【0071】 Evaluation wafer 2: Using a dicing saw, a first-stage half-cut was performed on the mirror surface of a mirror wafer (KST World Co., Ltd., 8-inch mirror wafer, diameter: 200±0.5 mm, thickness: 725±50 μm, single-sided mirror) (blade: Z09-SD2000-Y1 58×0.25A×40×45E-L, chip size: 5 mm × 8 mm, cutting depth: 15 μm, blade rotation speed: 30000 rpm). Observation with an optical microscope revealed a kerf width of 60 μm. Subsequently, a second-stage half-cut was performed (blade: ZH05-SD3500-N1-70-DD, chip size: 5 mm × 8 mm, cutting depth: 58 μm, blade rotation speed: 30000 rpm) to obtain evaluation wafer 2. 【0072】 Pre-dicing method: Using a tape laminator (Nitto Denko Corporation, DR3000II), an adhesive film for pre-dicing evaluation was attached to the half-cut surface of the evaluation wafer (23°C, application speed: 5 mm / min, application pressure: 0.36 MPa). Next, the wafer was back-ground using a grinder (DISCO DGP8760) (rough grinding and precision grinding, precision grinding amount: 40 μm, no polishing, thickness after grinding: 38 μm) to separate it into individual pieces. Tip breakage during pre-dicing was evaluated visually after backside grinding according to the following criteria. ○: No chip breakage was observed, including in the triangular corner area. ×: Tips were found to be missing, including in the triangular corner area. 【0073】 Furthermore, UV irradiation and peeling of the adhesive film for pre-dicing evaluation were performed to evaluate the adhesive residue after the pre-dicing method. UV irradiation was performed using a high-pressure mercury lamp at a dominant wavelength of 365 nm, with an irradiation intensity of 100 mW / cm² in an environment of 25°C. 2 Then, the adhesive film used for pre-dicing evaluation was exposed to an ultraviolet light dose of 1080 mJ / cm². 2 It was irradiated. The adhesive film for pre-dicing evaluation was removed using the following procedure. First, using a wafer mounter (Nitto Denko, MSA300), a separately prepared dicing tape (used as mounting tape) was attached to the 8-inch wafer ring frame and the wafer side of the individualized wafers mentioned above via the adhesive side of the dicing tape. Next, using a tape peeling machine (Nitto Denko, HR3000III), the adhesive film for pre-dicing evaluation was peeled off from the wafer notch area using a peeling tape (Lasting Systems, PET38REL). The peelability of the equipment was evaluated according to the following criteria. ○: The adhesive film for pre-dicing evaluation was successfully peeled off the wafer on the first attempt. ×: The adhesive film for pre-dicing evaluation could not be peeled off the wafer on the first attempt. 【0074】 The amount of adhesive residue on the individual wafers after pre-dicing was evaluated using an optical microscope (Olympus Corporation) according to the following criteria. ○: No adhesive residue was found. ×: Items in which adhesive residue was found. 【0075】 [Example 1] To 100 parts by mass of (meth)acrylic resin solution 1 (solids), 6.9 parts by mass of benzyldimethyl ketal (manufactured by IGM, trade name: Omnirad 651) and 0.93 parts by mass of isocyanate crosslinking agent (manufactured by Mitsui Chemicals, trade name: Olestar P49-75S) were added to obtain adhesive coating solution 1 for adhesive resin layers. Adhesive films for evaluating elongation at break, adhesive strength, and pre-dicing were prepared using the method described above. Furthermore, based on the evaluation methods described above, the elongation at break, adhesive strength, and pre-dicing method evaluation of the adhesive after UV curing were performed. The results are shown in Table 1. 【0076】 [Examples 2-10 and Comparative Examples 1 and 2] Adhesive films were prepared in the same manner as in Example 1, except that the types of adhesive resin layer and substrate layer were changed to those shown in Table 1. Evaluations were also performed in the same manner as in Example 1. The results obtained are shown in Table 1. The compounds listed in Table 1 are as follows: Omnirad 651 (manufactured by IGM): 2,2-dimethoxy-2-phenylacetophenone Omnirad 369 (manufactured by IGM): 2-benzyl-2-dimethylamino-4'-morpholinobtyrophenone Arronix M400 (manufactured by Toagosei Co., Ltd.): A mixture of dipentaerythritol pentaacrylate and dipentaerythritol hexaacrylate. NK Ester AD-TMP (manufactured by Shin-Nakamura Chemical Industry Co., Ltd.): Ditrimethylolpropanetetraacrylate 【0077】 [Table 1] 【0078】 This application claims priority based on Japanese Patent Application No. 2020-076702, filed on 23 April 2020, and incorporates all of its disclosures herein. [Explanation of symbols] 【0079】 10 Base material layer 20 Adhesive resin layer 30 Electronic Components 30A circuit forming surface 50 Adhesive Films 100 structures

Claims

[Claim 1] Step (A) of preparing a structure comprising an electronic component having a circuit-forming surface and an adhesive film bonded to the circuit-forming surface side of the electronic component, Step (B) of back-grinding the side of the electronic component opposite to the circuit formation side, Step (C) involves irradiating the adhesive film with ultraviolet light and then removing the adhesive film from the electronic component. A method for manufacturing an electronic device comprising at least the following: The adhesive film comprises a base layer and an ultraviolet-curable adhesive resin layer provided on one side of the base layer. The base material layer is in contact with the adhesive resin layer, or another layer is provided between the base material layer and the adhesive resin layer. A method for manufacturing an electronic device, wherein in step (C) above, the elongation at break of the adhesive resin layer after irradiation with ultraviolet light, as measured by the following method, is 20% or more and 200% or less. The above-mentioned step (A) is a method for manufacturing an electronic device, comprising at least one step (A1) selected from a step of cutting the electronic component in half (A1-1) and a step of irradiating the electronic component with a laser to form a modified layer on the electronic component (A1-2). (method) The adhesive resin layer, together with the base layer, is cut to a length of 110 mm and a width of 10 mm, and chucked in a tensile testing machine so that the initial chuck distance Lo is 50 mm. The sample is pulled at a speed of 30 mm / min, and the point at which fracture is observed in the adhesive resin layer by visual inspection is defined as the fracture point, and the chuck distance at that time is defined as L. The elongation at fracture (%) is calculated by (L - Lo) / Lo × 100 (%). [Claim 2] In the method for manufacturing an electronic device according to claim 1, In step (C) above, 200 mJ / cm² is applied to the adhesive film. ２ More than 2000mJ / cm ２ A method for manufacturing an electronic device, comprising irradiating the adhesive resin layer with ultraviolet light at the following doses to photocur it, thereby reducing the adhesive strength of the adhesive resin layer, and then removing the adhesive film from the electronic component. [Claim 3] In the method for manufacturing an electronic device according to claim 1 or 2, The adhesive resin layer comprises a (meth)acrylic resin having polymerizable carbon-carbon double bonds in its molecule and a photoinitiator, and a method for manufacturing an electronic device. [Claim 4] In the method for manufacturing an electronic device according to any one of claims 1 to 3, A method for manufacturing an electronic device, wherein the thickness of the adhesive resin layer is 10 μm or more and 100 μm or less. [Claim 5] In the method for manufacturing an electronic device according to any one of claims 1 to 4, A method for manufacturing an electronic device, wherein the resin constituting the base layer comprises one or more selected from polyolefins, polyesters, polyamides, polyacrylates, polymethacrylates, polyvinyl chlorides, polyvinylidene chlorides, polyimides, polyetherimides, ethylene vinyl acetate copolymers, polyacrylonitriles, polycarbonates, polystyrenes, ionomers, polysulfones, polyethersulfones, and polyphenylene ethers.

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