Metal oxide TFT and its manufacturing method, X-ray detector, display panel

Abstract

The present invention discloses a metal oxide TFT and a manufacturing method thereof, an X-ray detector, and a display panel, which belong to the field of electronic technology. The method includes forming an active layer made of a metal oxide semiconductor material on a base substrate, and a functional layer containing a lanthanoid element laminated on the active layer, and then performing an annealing treatment on the active layer and the functional layer to diffuse the lanthanoid element in the functional layer into the active layer, the lanthanoid element diffused into the active layer can form a trap state in the active layer, and photoinduced electrons generated by irradiating the active layer with light can be captured by the trap state, thereby improving the light irradiation stability of the active layer. The problem of low light stability of the active layer of the metal oxide TFT in the related art is solved, and the effect of increasing the light stability of the active layer in the metal oxide TFT is achieved.

Description

Technical Field

[0001] This application claims the priority of the Chinese patent application with application number 202110276323.3, invention name "Metal Oxide TFT and Its Manufacturing Method, X-ray Detector, Display Panel", filed on March 15, 2021, and all its contents are incorporated herein by reference.

[0002] This application relates to the field of electronic technology, and particularly to metal oxide TFT and its manufacturing method, X-ray detector, and display panel.

Background Art

[0003] A metal oxide thin film transistor (English: Thin Film Transistor, abbreviated: TFT) is a device that can realize a switching function.

[0004] In related technologies, there is a manufacturing method of a metal oxide TFT including forming an active layer with a metal oxide semiconductor material on a base substrate.

[0005] However, the light stability of the active layer of the metal oxide TFT manufactured by the above method is low.

Summary of the Invention

Means for Solving the Problems

[0006] Embodiments of this application provide a metal oxide TFT and its manufacturing method, an X-ray detector, and a display panel. The technical solutions are as follows.

[0007] According to one aspect of this application, forming an active layer made of a metal oxide semiconductor material on a base substrate, and a functional layer containing a lanthanoid element laminated on the active layer; by performing annealing treatment on the active layer and the functional layer, diffusing the lanthanoid element in the functional layer into the active layer, and changing the active layer into an active layer. including, This relates to a method for producing metal oxide TFTs.

[0008] As one option, the annealing treatment temperature is 200-450°C, the duration is 0.5-3 hours, and the atmosphere is dry air or oxygen-containing.

[0009] One option is to form an active layer of a metal oxide semiconductor material and a functional layer containing lanthanide elements laminated on the base substrate. The process involves sequentially forming a metal oxide semiconductor thin film and a thin film containing a lanthanide element on the aforementioned base substrate. Forming a first photoresist pattern on a thin film containing the lanthanide element, The active layer and the functional layer laminated on the active layer are formed by etching the metal oxide semiconductor layer thin film and the thin film containing the lanthanide element with the same etching solution. Removing the first photoresist pattern, Includes.

[0010] As one option, the aforementioned functional layer is subjected to removal processing.

[0011] One option is to perform a removal process on the aforementioned functional layer. Forming source / drain metal layers on a base substrate on which the functional layer is formed, Forming a second photoresist pattern on the source / drain metal layer, By performing an etching process on the source / drain metal layer and the functional layer, the source / drain metal layer forms a source / drain, and the portion of the functional layer outside the first region is etched, the first region being the orthographic projection region of the source / drain onto the active layer, and the source / drain includes a source and a drain. Includes.

[0012] One option is to form an active layer of a metal oxide semiconductor material and a functional layer containing lanthanide elements laminated on the base substrate. Forming the active layer on the base substrate, A thin film containing a lanthanide element is formed on a base substrate on which the active layer is formed, the active layer is surrounded by a top surface, a bottom surface, and sides connecting the top surface and the bottom surface, the bottom surface faces the base substrate, and the thin film containing the lanthanide element covers the top surface and sides of the active layer. Includes, Performing an annealing process on the active layer and the functional layer is: The process includes annealing the active layer and the thin film containing the lanthanide element to diffuse the lanthanide element to the top and side surfaces of the active layer.

[0013] As one option, the material of the functional layer includes a single oxide or a composite oxide containing a lanthanide metal.

[0014] As one option, the material of the functional layer includes one or more of the following: praseodymium oxide, samarium oxide, cerium oxide, indium zinc oxide, indium zinc praseodymium oxide, and indium zinc samarium oxide.

[0015] In another respect, with respect to a metal oxide TFT manufactured by the method described in any of the above aspects, the metal oxide TFT is The device includes an active layer of a metal oxide semiconductor disposed on a base substrate, the active layer containing a lanthanide element.

[0016] As one option, the lanthanide element is diffused into the material to a specified depth on the surface of the active layer away from the base substrate.

[0017] As one option, the active layer is a single layer and is the channel layer of the TFT, surrounded by a top surface, a bottom surface, and side surfaces connecting the top surface and the bottom surface, and the surface of the active layer away from the base substrate includes the top surface and side surfaces of the active layer.

[0018] As one option, the mass percentage per unit volume of the lanthanoid element in the active layer gradually decreases along the direction from the top surface of the active layer toward the base substrate.

[0019] As one option, the lanthanoid element includes one or more of praseodymium, samarium, and cerium.

[0020] As one option, the specified depth is 10 nanometers or less.

[0021] As one option, the metal oxide TFT further includes source / drain and a metal layer containing a lanthanoid element disposed between the active layer and the source / drain, the source / drain includes a source and a drain, and the material of the metal layer includes a single oxide or a composite oxide of a lanthanoid metal.

[0022] As one option, the mass percentage of the lanthanoid element in the active layer is 0.5% or more and 10% or less.

[0023] According to another aspect, it relates to an X-ray detector including the metal oxide TFT described in any of the above aspects.

[0024] According to another aspect, it relates to a display panel including the metal oxide TFT described in any of the above aspects.

[0025] According to another aspect, it relates to a metal oxide TFT manufactured by the method described in any of the above aspects, and the metal oxide TFT It includes gate, source, drain and active layers arranged on a base substrate, The active layer is positioned between the gate and the source or drain. The active layer includes a channel layer, and the channel layer is a first metal oxide semiconductor layer. The first metal oxide semiconductor layer contains one or more of indium, gallium, zinc, tin, aluminum, tungsten, zirconium, hafnium, and silicon, and the channel layer contains a material doped with a lanthanide metal. The channel layer contains a lanthanide metal-doped material at the upper surface and at a certain thickness from the upper surface, wherein the lanthanide metal content tends to decrease as the distance from the upper surface of the channel layer increases.

[0026] As one option, the source and drain are placed on the active layer, A metal layer is disposed between the channel layer of the active layer and the source, and the metal material of the metal layer and the lanthanide metal-doped material are the same material.

[0027] A metal layer is disposed between the channel layer and the drain of the active layer, and the metal layer contains the same lanthanide element as the lanthanide metal-doped material.

[0028] As one option, the thickness of the metal layer between the source and the channel layer is the same as the thickness of the metal layer between the drain and the channel layer.

[0029] As one option, the outer wall of the metal layer between the source and the channel layer and one outer wall of the channel layer are on the same inclined surface and have the same gradient angle direction, and the outer wall of the metal layer between the drain and the channel layer and the other outer wall of the channel layer are on the same inclined surface and have the same gradient angle direction, The inner wall of the metal layer between the source and the channel layer and the inner wall of the source are on the same inclined surface and have the same gradient angle direction, and the inner wall of the metal layer between the drain and the channel layer and the inner wall of the drain are on the same inclined surface and have the same gradient angle direction.

[0030] As one option, the active layer further comprises a back channel protective layer, the channel layer being lanthanide metal-doped indium gallium tin oxide, the back channel protective layer being disposed on the channel layer, and the back channel protective layer being crystalline indium gallium zinc oxide, lanthanide metal-doped indium gallium zinc oxide, or lanthanide metal-doped indium gallium zinc oxide.

[0031] As an option, the active layer further comprises a light-shielding protective layer, the light-shielding protective layer comprising lanthanide metal-doped indium zinc oxide or lanthanide metal-doped indium gallium zinc oxide, and the light-shielding protective layer is located on the other side of the channel layer away from the back channel protective layer.

[0032] One option is that the lanthanide metal is praseodymium.

[0033] The beneficial effects of the technical invention according to the embodiments of this application include at least the following:

[0034] This application provides a method for manufacturing metal oxide TFTs. In this method, an active layer made of a metal oxide semiconductor material and a functional layer containing lanthanide elements laminated on the active layer are formed on a base substrate. Then, by performing an annealing treatment on the active layer and the functional layer, the lanthanide elements in the functional layer are diffused into the active layer. The lanthanide elements diffused into the active layer can form a trapped state in the active layer, and photo-induced electrons generated by irradiating the active layer with light can be captured by this trapped state. As a result, the photo-irradiation stability of the active layer can be improved. This solves the problem of low photostability of the active layer of metal oxide TFTs in related technologies and achieves the effect of improving the photostability of the active layer in metal oxide TFTs. [Brief explanation of the drawing]

[0035] To more clearly explain the technical concepts in the embodiments of this application, the drawings used in the description of the embodiments will be briefly described below. The drawings in the following description are only a few embodiments of this application, and it will be obvious to those skilled in the art that other drawings can be obtained based on these drawings without any creative work.

[0036] [Figure 1] This is a flowchart of the method for producing metal oxide TFTs according to the embodiments of this application. [Figure 2] This is a flowchart of a method for producing another metal oxide TFT according to the embodiments of this application. [Figure 3] Figure 2 is a schematic diagram of the base substrate structure in the method shown. [Figure 4] Figure 2 shows another schematic diagram of the base substrate structure in the method described. [Figure 5] Figure 2 shows another schematic diagram of the base substrate structure in the method described. [Figure 6] Figure 2 shows another schematic diagram of the base substrate structure in the method described. [Figure 7] Figure 2 shows another schematic diagram of the base substrate structure in the method described. [Figure 8] Figure 2 shows another schematic diagram of the base substrate structure in the method described. [Figure 9] Figure 2 shows another schematic diagram of the base substrate structure in the method described. [Figure 10] Figure 2 shows another schematic diagram of the base substrate structure in the method described. [Figure 11] This is a flowchart of a method for producing another metal oxide TFT according to the embodiments of this application. [Figure 12] This is a schematic diagram of another structure of the base substrate in the method shown in Figure 11. [Figure 13] This is a schematic diagram of another structure of the base substrate in the method shown in Figure 11. [Figure 14] This is a flowchart of a method for producing another metal oxide TFT according to the embodiments of this application. [Figure 15] This is a schematic diagram of another structure of the base substrate in the method shown in Figure 14. [Figure 16] This is a schematic diagram of another structure of the base substrate in the method shown in Figure 14. [Figure 17] This is a schematic diagram of another structure of the base substrate in the method shown in Figure 14. [Figure 18] This is a schematic diagram of another structure of the base substrate in the method shown in Figure 14. [Figure 19] This is a schematic diagram of another structure of the base substrate in the method shown in Figure 14. [Figure 20] This is a schematic diagram of another structure of the base substrate in the method shown in Figure 14. [Figure 21] This is a schematic diagram of another structure of the base substrate in the method shown in Figure 14. [Figure 22] This is a flowchart of a method for producing another metal oxide TFT according to the embodiments of this application. [Figure 23] This is a schematic diagram of another structure of the base substrate in the method shown in Figure 22. [Figure 24] This is a schematic diagram of another structure of the base substrate in the method shown in Figure 22. [Figure 25]This is a schematic diagram of another structure of the base substrate in the method shown in Figure 22. [Figure 26] This is a schematic diagram of another structure of the base substrate in the method shown in Figure 22. [Figure 27] This is a schematic diagram of another structure of the base substrate in the method shown in Figure 22. [Figure 28] This is a schematic diagram of another structure of the base substrate in the method shown in Figure 22. [Figure 29] This is a flowchart of a method for producing another metal oxide TFT according to the embodiments of this application. [Figure 30] Figure 29 shows another schematic diagram of the base substrate structure in the method described. [Figure 31] Figure 29 shows another schematic diagram of the base substrate structure in the method described. [Figure 32] Figure 29 shows another schematic diagram of the base substrate structure in the method described. [Figure 33] Figure 29 shows another schematic diagram of the base substrate structure in the method described. [Figure 34] Figure 29 shows another schematic diagram of the base substrate structure in the method described. [Figure 35] Figure 29 shows another schematic diagram of the base substrate structure in the method described. [Figure 36] Figure 29 shows another schematic diagram of the base substrate structure in the method described. [Figure 37] This is a schematic diagram of the structure of a metal oxide TFT according to an embodiment of this application. [Figure 38] This is a schematic diagram of the structure of another metal oxide TFT according to an embodiment of this application. [Figure 39] This is a schematic diagram of the structure of another metal oxide TFT according to an embodiment of this application. [Figure 40] This is a schematic diagram of the structure of another metal oxide TFT according to an embodiment of this application. [Figure 41] This is a schematic diagram of the structure of another metal oxide TFT according to an embodiment of this application. [Modes for carrying out the invention]

[0037] The embodiments expressed in this application are shown in the drawings and described in more detail below. These drawings and descriptions are not intended to limit in any way the scope of the concepts of this application, but are intended to illustrate the concepts of this application to those skilled in the art by reference to specific embodiments.

[0038] To further clarify the purpose, technical proposal, and advantages of this application, embodiments of this application will be described in more detail below with reference to the drawings.

[0039] Metal oxide TFTs are novel TFTs that can be applied to liquid crystal displays (LCDs), organic light-emitting diode (OLED) displays, X-ray transducers, mini LED displays, quantum dot light-emitting diode (QLED) displays, and low-temperature polycrystalline oxide (LTPO) technologies.

[0040] When metal oxide TFTs are applied to a display panel, they can be arranged on an array substrate, which is one component of the display panel and is used to control the display panel. Depending on the type of display panel, the display panel may include other components. For example, if the display panel is a liquid crystal display panel, it may include a liquid crystal layer and a color film substrate. If the display panel is an organic light-emitting diode display panel, it may include organic light-emitting diodes.

[0041] The array substrate may include a base substrate and a plurality of thin-film transistors arranged in an array on the base substrate, and the thin-film transistors may include a gate, source, drain, and active layer, the source and drain being connected to the active layer, and the voltage applied to the gate controls whether the active layer turns on the source and drain, thereby realizing the function of the thin-film transistors.

[0042] Figure 1 is a flowchart of a method for producing a metal oxide TFT according to an embodiment of this application, and the method includes the following steps.

[0043] In step 201, an active layer made of a metal oxide semiconductor material and a functional layer containing lanthanide elements, which is laminated on the active layer, are formed on the base substrate.

[0044] In step 202, the lanthanide elements in the functional layer are diffused into the active layer by performing an annealing treatment on the active layer and the functional layer.

[0045] As described above, the embodiments of this application provide a method for manufacturing a metal oxide TFT. In this method, an active layer of a metal oxide semiconductor material and a functional layer containing lanthanide elements laminated on the active layer are formed on a base substrate. Then, by performing an annealing treatment on the active layer and the functional layer, the lanthanide elements in the functional layer are diffused into the active layer. The lanthanide elements diffused into the active layer can form a trapped state in the active layer, and photo-induced electrons generated by irradiating the active layer with light can be captured by this trapped state. As a result, the photo-irradiation stability of the active layer can be improved. This solves the problem of low photostability of the active layer of metal oxide TFTs in related technologies and achieves the effect of improving the photostability of the active layer in metal oxide TFTs.

[0046] Figure 2 is a flowchart of another method for producing a metal oxide TFT according to an embodiment of this application, the method comprising the following steps.

[0047] In step 301, the base board is obtained.

[0048] The base substrate material may include glass or polyimide.

[0049] In step 302, a gate is formed on the base substrate.

[0050] The gate may be a structure within a thin-film transistor. To form the gate, first, a gate metal layer (which can be formed by vapor deposition, sputtering, or the like) is formed on a base substrate, and then the gate can be obtained by processing the gate metal layer with a patterning process. The patterning process can yield a gate pattern containing multiple gates, and some or all of the gates in the gate pattern can refer to the gates according to the embodiments of this application. In the embodiments of this application, the relevant patterning process may include photoresist coating, exposure, development, etching, and photoresist stripping.

[0051] Exemplary, as shown in Figure 3, Figure 3 is a schematic diagram of the base substrate structure when step 302 is completed, with the gate 112 formed on the base substrate 111, and the material of the gate 112 may include metal.

[0052] In step 303, a gate insulating layer is formed on the gate pattern.

[0053] The gate insulating layer can be used to prevent short circuits between the gate and other structures within the thin-film transistor.

[0054] Exemplary, as shown in Figure 4, Figure 4 is a schematic diagram of another structure of the base substrate when step 303 is completed, where the gate insulating layer 113 is formed on the base substrate 111 having the gate 112, and the material of the gate insulating layer 113 may include silicon dioxide, silicon nitride, or a mixture of silicon dioxide and silicon nitride.

[0055] In step 304, an active layer made of a metal oxide semiconductor material and a functional layer containing a lanthanide element, which is laminated on the active layer, are formed on the gate insulating layer.

[0056] As shown in Figure 5, step 304 may include the following four substeps.

[0057] In substep 3041, a metal oxide semiconductor thin film and a thin film containing a lanthanide element are sequentially formed on the gate insulating layer.

[0058] Both metal oxide semiconductor thin films and thin films containing lanthanide elements have a full-layer structure and are sequentially coated on a gate insulating layer. Both metal oxide semiconductor thin films and thin films containing lanthanide elements can be formed by vapor deposition.

[0059] Materials for metal oxide semiconductor thin films may include indium zinc oxide (IZO), indium gallium oxide (IGO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), indium tin zinc oxide (ITZO), or single or composite metal oxides consisting of indium (In), gallium (Ga), zinc (Zn), tin (Sn), aluminum (Al), tungsten (W), zirconium (Zr), hafnium (Hf), and silicon (Si).

[0060] Exemplary, as shown in Figure 6, Figure 6 is a schematic diagram of another structure of the base substrate when step 3041 is completed, in which a metal oxide semiconductor thin film 114 and a thin film 115 containing a lanthanide element are formed on the base substrate 111 on which the gate insulating layer 113 is formed.

[0061] In substep 3042, a first photoresist pattern is formed on a thin film containing a lanthanide element.

[0062] The process for forming the first photoresist pattern includes forming a photoresist film layer on a thin film containing a lanthanide element, and then exposing and developing the photoresist film layer to form the first photoresist pattern.

[0063] Here, photoresist, also known as etching resist, is a support medium for imaging in lithography. Its role is to utilize the principle of photochemical reactions to convert diffracted and filtered light information in a lithography system into chemical energy, thereby completing the replication of the mask pattern.

[0064] In substep 3043, an active layer and a functional layer stacked on the active layer are formed by etching the metal oxide semiconductor layer thin film and the thin film containing the lanthanide element with the same etching solution.

[0065] In the embodiments of this application, an active layer and a functional layer laminated on the active layer are formed by etching a metal oxide semiconductor layer thin film and a thin film containing a lanthanide element with the same etching solution.

[0066] In this way, the active layer and the functional layer stacked on the active layer were formed by the primary patterning process.

[0067] The material of the functional layer may contain single or composite oxides of various lanthanide metals such as praseodymium (Pr), samarium (Sm), and cerium (Ce), and may contain, for example, one or more of praseodymium oxide, samarium oxide, cerium oxide, indium zinc oxide, indium zinc praseodymium oxide, and indium zinc samarium oxide.

[0068] Exemplary, as shown in Figure 7, Figure 7 is a schematic diagram of another structure of the base substrate at the end of step 3043, in which an active layer 116 and a functional layer 117 are obtained by processing a metal oxide semiconductor layer thin film and a thin film containing a lanthanide element.

[0069] In substep 3044, the first photoresist pattern is removed.

[0070] The first photoresist pattern can be removed by peeling.

[0071] In step 305, the lanthanide elements in the functional layer are diffused into the active layer by performing an annealing treatment on the active layer and the functional layer.

[0072] By performing annealing treatment on the active layer and the functional layer, lanthanide elements in the functional layer can be diffused into the active layer, while the active layer can be given high corrosion resistance characteristics.

[0073] Here, annealing is a metal heat treatment process in which the metal is slowly heated to a certain temperature, held for a sufficient amount of time, and then cooled at an appropriate rate. In the embodiments of this application, the temperature of the annealing process may be 200 to 450°C, the time may be 0.5 to 3 hours, and the atmosphere may be dry air or oxygen-containing.

[0074] By performing the annealing process in dry air and oxygen, it is possible to avoid the influence of impurities such as nitrogen or water vapor on the annealing process.

[0075] In the annealing process, lanthanide elements in the functional layer can diffuse onto the surface of the active layer. The lanthanide elements diffused into the active layer can form a trapped state within the active layer. Photo-induced electrons generated by irradiating the active layer with light can be captured by this trapped state. As a result, the number of photo-induced electrons can be significantly reduced, improving the photo-irradiation stability of the active layer.

[0076] Photo-induced electrons refer to the phenomenon that occurs when light is shone on a semiconductor; if the energy of the photon exceeds the band gap of the semiconductor, electrons in the valence band absorb the photon and enter the conduction band, generating photo-induced electron-hole pairs.

[0077] The size of the band gap determines whether a material has semiconductor or insulating properties. Semiconductors have a small band gap, and as the temperature rises, electrons can be excited and transferred to the conduction band, making the material conductive. Insulators have a large band gap and are poor conductors even at high temperatures.

[0078] In the annealing process, the thickness of the lanthanide elements in the functional layer diffused onto the surface of the active layer is 10 nanometers or less, or the thickness of the lanthanide elements in the functional layer diffused onto the surface of the active layer is 5 nanometers or less, and the mass percentage of lanthanide elements in the active layer is 0.5% or more and 10% or less. Within this range, the lanthanide elements diffused into the active layer can improve the photo-irradiation stability of the active layer.

[0079] Exemplary, as shown in Figure 8, which is a schematic diagram of another structure of the base substrate after step 305 is completed, in which the active layer 116 and the functional layer 117 are annealed to diffuse the lanthanide element Ln in the functional layer 117 to the surface of the active layer away from the base substrate 111.

[0080] In step 306, a removal process is performed on the functional layer.

[0081] In the embodiments of this application, the functional layer on the active layer can be removed by an etching process, and since the active layer after annealing has high corrosion resistance characteristics, the active layer can be avoided from being damaged during the etching process. By removing the functional layer, it is possible to avoid the functional layer affecting the performance of the active layer.

[0082] The etching method may include dry etching or wet etching.

[0083] As shown in Figure 9, Figure 9 is a schematic diagram of another structure of the base substrate after step 306 is completed, where an active layer with high corrosion resistance remains after etching has been performed on all functional layers.

[0084] In step 307, a source and a drain are formed on the active layer.

[0085] By removing the functional layer and then forming a source and drain on the active layer, the contact area between the active layer and the source and drain can be increased, thereby improving the performance of the metal oxide TFT.

[0086] The process for forming a source and drain on an active layer includes forming a source / drain metal layer on a base substrate on which an active layer is formed, forming a third photoresist pattern on the source / drain metal layer, and performing an etching treatment on the source / drain metal layer so that the source / drain metal layer forms a source and a drain.

[0087] Exemplary, as shown in Figure 10, which is a schematic diagram of another structure of the base substrate after step 307 is completed, in which a source / drain metal layer is formed on the base substrate 111 on which the active layer 116 is formed, and thereafter, a primary patterning process is performed on the source / drain metal layer to form the source 118 and drain 119.

[0088] As described above, the embodiments of this application provide a method for manufacturing a metal oxide TFT. In this method, an active layer of a metal oxide semiconductor material and a functional layer containing lanthanide elements laminated on the active layer are formed on a base substrate. Then, by performing an annealing treatment on the active layer and the functional layer, the lanthanide elements in the functional layer are diffused into the active layer. The lanthanide elements diffused into the active layer can form a trapped state in the active layer, and photo-induced electrons generated by irradiating the active layer with light can be captured by this trapped state. As a result, the photo-irradiation stability of the active layer can be improved. This solves the problem of low photostability of the active layer of metal oxide TFTs in related technologies and achieves the effect of improving the photostability of the active layer in metal oxide TFTs.

[0089] Figure 11 is a flowchart of another method for producing a metal oxide TFT according to an embodiment of this application, the method may include the following steps.

[0090] In step 401, the base board is obtained.

[0091] In step 402, a gate is formed on the base substrate.

[0092] For step 402, you can refer to step 302 in the embodiment shown in Figure 2 above, and the explanation is omitted here. When step 402 is completed, you can also refer to Figure 3 for the structure of the base substrate.

[0093] In step 403, a gate insulating layer is formed on the gate pattern.

[0094] For step 403, you can refer to step 303 in the embodiment shown in Figure 2 above, and the explanation will be omitted here. When step 403 is completed, you can also refer to Figure 4 for the structure of the base substrate.

[0095] In step 404, an active layer of metal oxide semiconductor material and a functional layer laminated on the active layer are formed on the gate insulating layer.

[0096] For step 404, you can refer to step 304 in the embodiment shown in Figure 2 above, and the explanation will be omitted here. When step 404 is completed, you can also refer to Figure 7 for the structure of the base substrate.

[0097] In step 405, the lanthanide elements in the functional layer are diffused into the active layer by processing the active layer and the functional layer.

[0098] For step 405, you can refer to step 305 in the embodiment shown in Figure 2 above. In the embodiment of this application, the explanation is omitted, and when step 404 is completed, you can refer to Figure 8 for the structure of the base substrate.

[0099] In step 406, source and drain metal layers are formed on the base substrate on which the functional layer is formed.

[0100] Source and drain metal layers are formed on a base substrate on which a functional layer is formed.

[0101] Exemplary, as shown in Figure 12, Figure 12 is a schematic diagram of another structure of the base substrate when step 406 is completed, with the source / drain metal layer 211 formed on the base substrate 111 on which the functional layer 117 is formed.

[0102] In step 407, a second photoresist pattern is formed on the source and drain metal layers.

[0103] The method for forming the second photoresist can be described by referring to the method for forming the first photoresist pattern in the above embodiment, and such description is omitted in the embodiment of this application.

[0104] In step 408, etching is performed on the source-drain metal layer and the functional layer to form the source-drain metal layer and etch the portion of the functional layer outside the first region, the first region being the orthographic projection region of the source-drain onto the active layer, and the source-drain includes the source and the drain.

[0105] In this step, the source-drain metal layer and the functional layer can be etched with the same etching solution to form the source-drain. In this way, the source-drain is formed by the primary patterning process, and then the functional layer is partially removed, reducing the influence of the functional layer on the active layer. The etching method includes dry etching and wet etching. The first region is the orthographic projection region of the source-drain onto the active layer. The active layer after annealing has high corrosion resistance, and the active layer can be prevented from being damaged during the etching process of the functional layer.

[0106] As shown in Figure 13, Figure 13 is a schematic diagram of another structure of the base substrate when step 408 is completed, and the source 212 and drain 213 are formed by performing a primary patterning process on the source / drain metal layer 211.

[0107] By etching a portion of the functional layer outside the first region, a portion of the functional layer outside the first region is removed. In this processing method, a metal layer 1171 containing lanthanide elements exists between the active layer 116 and the source / drain.

[0108] By forming source and drain metal layers on a functional layer and then processing both the source and drain metal layers and the functional layer, the formation of the source and drain and the removal of the functional layer can be achieved in a single step, thus eliminating the manufacturing process for metal oxide TFTs.

[0109] In step 409, the second photoresist is removed.

[0110] As described above, the embodiments of this application provide a method for manufacturing a metal oxide TFT. In this method, an active layer of a metal oxide semiconductor material and a functional layer containing lanthanide elements laminated on the active layer are formed on a base substrate. Then, by performing an annealing treatment on the active layer and the functional layer, the lanthanide elements in the functional layer are diffused into the active layer. The lanthanide elements diffused into the active layer can form a trapped state in the active layer, and photo-induced electrons generated by irradiating the active layer with light can be captured by this trapped state. As a result, the photo-irradiation stability of the active layer can be improved. This solves the problem of low photostability of the active layer of metal oxide TFTs in related technologies and achieves the effect of improving the photostability of the active layer in metal oxide TFTs.

[0111] Figure 14 is a flowchart of another method for producing a metal oxide TFT according to an embodiment of the present application, the method which may include the following steps.

[0112] In step 501, the base board is obtained.

[0113] In step 502, a gate is formed on the base substrate.

[0114] For step 502, you can refer to step 302 in the embodiment shown in Figure 2 above. In the embodiment of this application, the explanation is omitted, and when step 502 is completed, you can refer to Figure 3 for the structure of the base substrate.

[0115] In step 503, a gate insulating layer is formed on the gate pattern.

[0116] For step 503, you can refer to step 303 in the embodiment shown in Figure 2 above. In the embodiment of this application, the explanation is omitted, and when step 503 is completed, you can refer to Figure 4 for the structure of the base substrate.

[0117] In step 504, an active layer of metal oxide semiconductor material is formed on the gate insulating layer.

[0118] An active layer is formed on a base substrate having a gate insulating layer. For the active layer, first a metal oxide semiconductor thin film is formed on the gate insulating layer, a fourth photoresist pattern is formed on the metal oxide semiconductor thin film, and the active layer is formed by etching the metal oxide semiconductor thin film with an etching solution, and then the fourth photoresist is removed.

[0119] As shown in Figure 15, step 504 may include the following two substeps:

[0120] In substep 5041, a metal oxide semiconductor thin film is formed on the gate insulating layer.

[0121] Metal oxide semiconductor thin films have a full-layer structure and are coated on a gate insulating layer. Metal oxide semiconductor thin films can be formed by vapor deposition.

[0122] Exemplary, as shown in Figure 16, which is a schematic diagram of another structure of the base substrate when step 5041 is completed, a metal oxide semiconductor thin film 311 is formed on the base substrate 111 on which the gate insulating layer 113 is formed.

[0123] In substep 5042, an active layer is obtained by processing a metal oxide semiconductor thin film.

[0124] The material of the active layer can be referenced from the material of the active layer in the embodiment shown in Figure 2 above.

[0125] Exemplary, as shown in Figure 17, which is a schematic diagram of another structure of the base substrate after step 5042 is completed, in which an active layer 312 is obtained by processing a metal oxide semiconductor thin film by a primary patterning process, the active layer 312 being surrounded by a top surface, a bottom surface, and sides connecting the top surface and the bottom surface, the bottom surface facing the base substrate 111.

[0126] In step 505, a thin film containing a lanthanide element is formed on the base substrate on which the active layer is formed.

[0127] The material of the thin film containing the lanthanide element may include single or composite oxides of lanthanide metals such as praseodymium (Pr), samarium (Sm), and cerium (Ce), and a thin film containing the lanthanide element is formed on a base substrate on which an active layer is formed, and the thin film includes a functional layer, and the material of the thin film containing the lanthanide element may include one or more of praseodymium oxide, samarium oxide, cerium oxide, indium zinc oxide, indium zinc praseodymium oxide, and indium zinc samarium oxide.

[0128] Exemplary, as shown in Figure 18, which is a schematic diagram of another structure of the base substrate when step 505 is completed, a thin film 313 containing a lanthanide element is formed on the base substrate 111 on which the active layer 312 is formed, and the thin film 313 containing the lanthanide element covers the top and sides of the active layer 312.

[0129] In step 506, the lanthanide elements are diffused from the lanthanide-containing thin film to the top and sides of the active layer by performing an annealing treatment on the active layer and the active layer.

[0130] The thin film containing the active layer and lanthanide elements is subjected to an annealing treatment. For specific embodiments of the annealing treatment, refer to the embodiment of the annealing treatment shown in Figure 2.

[0131] By covering the top and sides of the active layer with a thin film containing lanthanide elements, the lanthanide elements in the thin film can be diffused to the top and sides of the active layer, further improving the photostability of the sides of the active layer.

[0132] As shown in Figure 19, Figure 19 is a schematic diagram of another structure of the base substrate when step 506 is completed, and the lanthanide elements in the thin film 313 containing the lanthanide elements are diffused into the active layer 312 by annealing the thin film 313 containing the lanthanide elements.

[0133] In step 507, a removal treatment is performed on the thin film containing lanthanide elements.

[0134] Removing a thin film containing lanthanide elements may involve etching the entire thin film containing the lanthanide elements.

[0135] As shown in Figure 20, Figure 20 is a schematic diagram of another structure of the base substrate when step 507 is completed, where the entire thin film containing lanthanide elements has been etched, leaving an active layer 312 with high corrosion resistance.

[0136] In step 508, a source and a drain are formed on the active layer.

[0137] Step 508 can be described by referring to step 307 in the embodiment shown in Figure 2 above, and in the embodiment of this application, the explanation is omitted.

[0138] Exemplary, as shown in Figure 21, which is a schematic diagram of another structure of the base substrate after step 508 is completed, in which a source-drain metal layer is formed on the base substrate 111 on which the active layer 312 is formed, and thereafter, a primary patterning process is performed on the source-drain metal layer to form the source 118 and drain 119.

[0139] As described above, the embodiments of this application provide a method for manufacturing a metal oxide TFT. In this method, an active layer of a metal oxide semiconductor material and a functional layer containing lanthanide elements laminated on the active layer are formed on a base substrate. Then, by performing an annealing treatment on the active layer and the functional layer, the lanthanide elements in the functional layer are diffused into the active layer. The lanthanide elements diffused into the active layer can form a trapped state in the active layer, and photo-induced electrons generated by irradiating the active layer with light can be captured by this trapped state. As a result, the photo-irradiation stability of the active layer can be improved. This solves the problem of low photostability of the active layer of metal oxide TFTs in related technologies and achieves the effect of improving the photostability of the active layer in metal oxide TFTs.

[0140] Figure 22 is a flowchart of another method for producing a metal oxide TFT according to an embodiment of the present application, the method which may include the following steps.

[0141] In step 601, the base board is obtained.

[0142] In step 602, a buffer layer, a metal oxide semiconductor thin film, and a thin film containing a lanthanide element are sequentially formed on the base substrate.

[0143] The buffer layer, the metal oxide semiconductor thin film, and the thin film containing lanthanide elements are all full-layer structures and are sequentially coated onto a base substrate. The buffer layer can be formed from silicon nitride material, and the buffer layer, the metal oxide semiconductor thin film, and the thin film containing lanthanide elements can be formed by vapor deposition.

[0144] Exemplary, as shown in Figure 23, Figure 23 is a schematic diagram of another structure of the base substrate when step 602 is completed, with a buffer layer 411, a metal oxide semiconductor thin film 412, and a thin film 413 containing a lanthanide element formed on the base substrate 111.

[0145] In step 603, an active layer and a functional layer are obtained by processing a metal oxide semiconductor thin film and a thin film containing a lanthanide element.

[0146] Step 603 can be described by referring to substeps 3042, 3043, and 3044 in the embodiment shown in Figure 2, and their description is omitted in the embodiment of this application.

[0147] As shown in Figure 24, Figure 24 is a schematic diagram of another structure of the base substrate when step 603 is completed, and the active layer 414 and functional layer 415 are obtained by processing the metal oxide semiconductor thin film and the thin film containing lanthanide elements by a primary patterning process.

[0148] In step 604, the lanthanide elements in the functional layer are diffused into the active layer by performing an annealing treatment on the active layer and the functional layer.

[0149] Step 604 can be described by referring to step 305 in the embodiment shown in Figure 2 above, and in the embodiment of this application, the explanation is omitted.

[0150] Exemplary, as shown in Figure 25, which is a schematic diagram of another structure of the base substrate after step 604 is completed, in which the lanthanide elements in the functional layer 415 are diffused into the active layer 414 by annealing the active layer and the functional layer 415.

[0151] In step 605, the functional layer is subjected to removal processing.

[0152] Step 605 can be described by referring to step 306 in the embodiment shown in Figure 2 above, and in the embodiment of this application, the explanation is omitted.

[0153] Exemplary, as shown in Figure 26, Figure 26 is a schematic diagram of another structure of the base substrate when step 605 is completed, with the entire functional layer etched and the active layer 414 having high corrosion resistance characteristics remaining.

[0154] In step 606, a gate insulating structure is formed on the active layer.

[0155] The material of the gate insulating structure may be silicon dioxide, silicon nitride, or a mixture of silicon dioxide and silicon nitride. The gate insulating structure can be formed by forming a gate insulating material layer on the active layer by vapor deposition, and then performing a primary patterning process on the gate insulating material layer.

[0156] Exemplary, as shown in Figure 27, which is a schematic diagram of another structure of the base substrate when step 606 is completed, a gate insulating material layer is formed on the active layer 414, and then a gate insulating structure 416 is formed by performing a primary patterning process on the gate insulating material layer.

[0157] In step 607, a gate is formed on the gate insulating structure.

[0158] The gate can be formed from a metallic material, and the gate can be formed by forming a gate metal layer on a gate insulating structure by vapor deposition, and then performing a primary patterning process on the gate metal layer.

[0159] Exemplary, as shown in Figure 28, which is a schematic diagram of another structure of the base substrate when step 607 is completed, a gate metal layer is formed on the gate insulating structure 416, and then the gate 417 is formed by performing a primary patterning process on the gate metal layer.

[0160] As described above, the embodiments of this application provide a method for manufacturing a metal oxide TFT. In this method, an active layer of a metal oxide semiconductor material and a functional layer containing lanthanide elements laminated on the active layer are formed on a base substrate. Then, by performing an annealing treatment on the active layer and the functional layer, the lanthanide elements in the functional layer are diffused into the active layer. The lanthanide elements diffused into the active layer can form a trapped state in the active layer, and photo-induced electrons generated by irradiating the active layer with light can be captured by this trapped state. As a result, the photo-irradiation stability of the active layer can be improved. This solves the problem of low photostability of the active layer of metal oxide TFTs in related technologies and achieves the effect of improving the photostability of the active layer in metal oxide TFTs.

[0161] Figure 29 is a flowchart of another method for producing a metal oxide TFT according to an embodiment of the present application, the method which may include the following steps.

[0162] In step 701, the base board is obtained.

[0163] In step 702, a buffer layer and a metal oxide semiconductor thin film are sequentially formed on the base substrate.

[0164] Both the buffer layer and the metal oxide semiconductor thin film are full-layer structures, sequentially coated onto a base substrate, the buffer layer can be formed from silicon nitride material, and both the buffer layer and the metal oxide semiconductor thin film can be formed by vapor deposition.

[0165] Exemplary, as shown in Figure 30, Figure 30 is a schematic diagram of another structure of the base substrate when step 702 is completed, with a buffer layer 411 and an active layer thin film 512 formed on the base substrate 111.

[0166] In step 703, an active layer is obtained by processing a metal oxide semiconductor thin film.

[0167] The material for the active layer can be referenced from the material for the active layer in the embodiment shown in Figure 2 above. The active layer is formed by processing a metal oxide semiconductor thin film using a primary patterning process.

[0168] Exemplary, as shown in Figure 31, Figure 31 is a schematic diagram of another structure of the base substrate at the end of step 703, where the active layer 513 is obtained by processing the metal oxide semiconductor thin film by a primary patterning process.

[0169] In step 704, a thin film containing a lanthanide element is formed on the base substrate on which the active layer is formed.

[0170] Step 704 can be described by referring to step 505 in the embodiment shown in Figure 14 above, and in the embodiment of this application, the explanation is omitted.

[0171] As shown in Figure 32, Figure 32 is a schematic diagram of another structure of the base substrate when step 704 is completed, and a thin film 514 containing lanthanide elements is formed on the base substrate 111 on which the active layer 513 is formed.

[0172] In step 705, the lanthanide elements in the thin film containing the lanthanide elements are diffused into the active layer by performing an annealing treatment on the active layer and the thin film containing the lanthanide elements.

[0173] Step 705 can be described by referring to step 506 in the embodiment shown in Figure 14 above, and in the embodiment of this application, the explanation is omitted.

[0174] As shown in Figure 33, Figure 33 is a schematic diagram of another structure of the base substrate when step 705 is completed, in which the lanthanide elements in the lanthanide-containing thin film 514 are diffused to the top and side surfaces of the active layer 513 by annealing the active layer 513 and the thin film 514 containing the lanthanide elements.

[0175] In step 706, a removal treatment is performed on the thin film containing lanthanide elements.

[0176] Step 706 can be described by referring to step 507 in the embodiment shown in Figure 14 above, and in the embodiment of this application, the explanation is omitted.

[0177] As shown in Figure 34, Figure 34 is a schematic diagram of another structure of the base substrate when step 706 is completed, where the entire thin film containing lanthanide elements has been etched, leaving an active layer 513 with high corrosion resistance.

[0178] In step 707, a gate insulating structure is formed on the active layer.

[0179] Step 707 can be described by referring to step 606 in the embodiment shown in Figure 22, and in the embodiment of this application, the explanation is omitted.

[0180] Exemplary, as shown in Figure 35, which is a schematic diagram of another structure of the base substrate when step 706 is completed, a gate insulating material layer is formed on the active layer 513, and then a gate insulating structure 515 is formed by performing a primary patterning process on the gate insulating material layer.

[0181] In step 708, a gate is formed on the gate insulating structure.

[0182] Step 708 can be described by referring to step 607 in the embodiment shown in Figure 22 above, and in the embodiment of this application, the explanation is omitted.

[0183] Exemplary, as shown in Figure 36, which is a schematic diagram of another structure of the base substrate when step 706 is completed, a gate metal layer is formed on the gate insulating structure 515, and then the gate 516 is formed by performing a primary patterning process on the gate metal layer.

[0184] As described above, the embodiments of this application provide a method for manufacturing a metal oxide TFT. In this method, an active layer of a metal oxide semiconductor material and a functional layer containing lanthanide elements laminated on the active layer are formed on a base substrate. Then, by performing an annealing treatment on the active layer and the functional layer, the lanthanide elements in the functional layer are diffused into the active layer. The lanthanide elements diffused into the active layer can form a trapped state in the active layer, and photo-induced electrons generated by irradiating the active layer with light can be captured by this trapped state. As a result, the photo-irradiation stability of the active layer can be improved. This solves the problem of low photostability of the active layer of metal oxide TFTs in related technologies and achieves the effect of improving the photostability of the active layer in metal oxide TFTs.

[0185] The embodiments of this application further provide a metal oxide TFT, which can be manufactured by the method for manufacturing the metal oxide TFT in the above embodiments.

[0186] The metal oxide TFT may include an active layer of a metal oxide semiconductor disposed on a base substrate, the active layer containing a lanthanide element.

[0187] For illustrative purposes, the structure of the metal oxide TFT can be seen in Figures 10, 13, 21, 28, and 36. As shown in Figure 10, an active layer 116 is provided on a base substrate 111, and the lanthanide element Ln in the active layer 116 can improve the photostability of the active layer 116.

[0188] As described above, the embodiments of this application provide a metal oxide TFT, which may include an active layer of a metal oxide semiconductor disposed on a base substrate, the active layer containing a lanthanide element, the lanthanide element in the active layer can form a trapped state, and photo-induced electrons generated by irradiating the active layer with light can be captured by this trapped state, thereby improving the photo-irradiation stability of the active layer. This solves the problem of low photostability of the active layer of metal oxide TFTs in related technologies and achieves the effect of improving the photostability of the active layer in metal oxide TFTs.

[0189] As shown in Figure 37, which is a schematic diagram of the structure of another metal oxide TFT according to an embodiment of the present application, one option is that the lanthanide element Ln is diffused into the material to a specified depth D on the surface of the active layer 611 away from the base substrate. By diffusing the lanthanide element Ln into the material to a specified depth D, the influence on the active layer 611 by light rays irradiating the active layer 611 from above (above as shown in Figure 37, this direction may also be the direction of the surface on which the display panel displays the image) can be reduced.

[0190] As can be seen from the above embodiment, the surface of the active layer away from the base substrate is the surface that comes into contact with the functional layer containing lanthanide elements. Therefore, the lanthanide elements also begin to diffuse from that surface into the active layer, and subsequently, the lanthanide elements are mainly distributed on the side of the active layer away from the base substrate.

[0191] As shown in Figure 38, Figure 38 is a schematic diagram of the structure of another base substrate according to an embodiment of the present application, in which, as one option, the active layer is a single layer and is a channel layer of a TFT, surrounded by a top surface S1, a bottom surface S2, and a side surface S3 connecting the top surface and the bottom surface, and the surface of the active layer away from the base substrate includes the top surface S1 and the side surface S3 of the active layer.

[0192] One option is that the mass percentage of lanthanide elements per unit volume in the active layer gradually decreases along the direction from the top surface of the active layer toward the base substrate. During the annealing process, lanthanide elements begin to diffuse into the interior of the active layer from the surface of the active layer away from the base substrate, so the mass percentage of lanthanide elements per unit volume in the active layer gradually decreases along the direction toward the base substrate.

[0193] As an option, the lanthanide elements may include one or more of praseodymium, samarium, and cerium. The lanthanide elements may also include one or more of all lanthanide elements.

[0194] As one option, as shown in Figure 37, the specified depth D is 10 nanometers or less, and within this range, the photo-stabilizing layer can play a role in improving the photostability of the active layer. When the specified depth D is 5 nanometers or more, the photo-stabilizing layer can better play a role in improving the photostability of the active layer.

[0195] As one option, the metal oxide TFT further comprises a source-drain and a metal layer containing a lanthanide element positioned between the active layer and the source-drain, wherein the source-drain includes the source and drain, and the material of the metal layer comprises a single oxide or a composite oxide of a lanthanide metal.

[0196] As shown in Figure 13, a metal layer 1171 containing lanthanide elements is positioned between the active layer 116 and the source-drain, the source-drain comprising a source 212 and a drain 213.

[0197] One option is that the mass percentage of lanthanide elements in the active layer is between 0.5% and 10%. Within this range, the photo-stable layer can play a role in improving the photostability of the active layer.

[0198] Exemplary, as shown in Figure 37, the metal oxide TFT further includes a gate 112 and a gate insulating layer 113, the gate 112 being located on a base substrate 111, the gate insulating layer 113 being located on the base substrate 111 on which the gate 112 is located, and the active layer 611 being located on the gate insulating layer 113.

[0199] As described above, the embodiments of this application provide a metal oxide TFT, which may include an active layer of a metal oxide semiconductor disposed on a base substrate, the active layer containing a lanthanide element, the lanthanide element in the active layer can form a trapped state, and photo-induced electrons generated by irradiating the active layer with light can be captured by this trapped state, thereby improving the photo-irradiation stability of the active layer. This solves the problem of low photostability of the active layer of metal oxide TFTs in related technologies and achieves the effect of improving the photostability of the active layer in metal oxide TFTs.

[0200] Embodiments of this application further provide an X-ray detector which may include a metal oxide TFT as shown in Figures 10, 13, 21, 28, or 36. The X-ray detector may include a substrate, a plurality of detection units disposed on the substrate, and a scintillator layer provided on the plurality of detection units, each of which may include a metal oxide TFT and a photosensitive structure, the photosensitive structure being located at the drain of the metal oxide TFT and electrically connected to the metal oxide TFT, the scintillator layer being used to convert X-rays into visible light, the photosensitive structure being used to convert the visible light into an electrical signal, and the metal oxide TFT being used as a switch to read the electrical signal.

[0201] Embodiments of this application further provide a display panel which may include a metal oxide TFT as shown in Figures 10, 13, 21, 28, or 36. This display panel can be incorporated into various products and components having display functions, such as liquid crystal panels, electronic paper, mobile phones, tablets, televisions, laptops, digital photo frames, and navigators.

[0202] The embodiments of this application further provide another metal oxide TFT, which can be manufactured by the method for manufacturing the metal oxide TFT in the above embodiments. As shown in Figure 39, Figure 39 is a schematic diagram of the structure of another metal oxide TFT according to the embodiments of this application, and the metal oxide TFT is

[0203] The metal oxide TFT includes a gate 712, a source 713, a drain 714, and an active layer 715 arranged on a base substrate 711, the active layer 715 being positioned between the gate 712 and the source 713 or drain 714, and the active layer 715 includes a channel layer 7151, the channel layer 7151 being a first metal oxide semiconductor layer. The metal oxide TFT further includes a gate insulating layer 716.

[0204] Here, the first metal oxide semiconductor layer contains one or more of indium (In), gallium (Ga), zinc (Zn), tin (Sn), aluminum (Al), tungsten (W), zirconium (Zr), hafnium (Hf), and silicon (Si), and the channel layer 7151 contains a material doped with a lanthanide metal. The lanthanide elements in the lanthanide-doped material can form a trapped state in the active layer, and photo-induced electrons generated by irradiating the active layer with light can be captured by this trapped state, thereby improving the photo-irradiation stability of the active layer.

[0205] In some embodiments, the material includes a lanthanide metal-doped material on the upper surface of the channel layer and at a certain thickness from the upper surface, wherein the lanthanide metal content tends to decrease as the distance from the upper surface of the channel layer increases.

[0206] In some embodiments, in the channel layer 7151, along the thickness direction f1 of the channel, within a certain position range or thickness range, the lanthanide metal content near the intermediate position of the channel layer is greater than the lanthanide metal content far from the intermediate position of the channel layer, moving from the top layer (back channel position) toward the middle of the channel layer. The active layer 715 may include the top and side surfaces away from the base substrate. Before annealing, a functional layer containing lanthanide elements can be laminated onto the top surface of the active layer 715 away from the base substrate. During annealing, the lanthanide elements can be diffused from the top surface away from the base substrate into the interior of the active layer, allowing for less lanthanide metal to be included on the side surfaces of the active layer, thus forming the channel layer 7151. As a result, the lanthanide metal content near the intermediate position of the channel layer 7151 is greater than the lanthanide metal content far from the intermediate position of the channel layer 7151.

[0207] As described above, the embodiments of this application provide a metal oxide TFT in which the active layer of the metal oxide TFT may include a channel layer containing a lanthanide metal-doped material, and the lanthanide elements in the lanthanide metal-doped material can form a trapped state in the active layer, and photo-induced electrons generated by irradiating the active layer with light can be captured by this trapped state, thereby improving the photo-irradiation stability of the active layer. This solves the problem of low photostability of the active layer of metal oxide TFTs in related technologies and achieves the effect of improving the photostability of the active layer in metal oxide TFTs.

[0208] As one option, as shown in Figure 40, which is a schematic diagram of the structure of another metal oxide TFT according to an embodiment of the present application, the active layer 814 is provided with a source 815 and a drain 816, a metal layer 817A is provided between the channel layer 8141 of the active layer 814 and the source 815, and the metal layer 817A contains the same lanthanide elements as the lanthanide metal-doped material, and a metal layer 817B is provided between the channel layer 8141 of the active layer 814 and the drain 816, and the metal layer 817B contains the same lanthanide elements as the lanthanide metal-doped material. The metal oxide TFT may further include a base substrate 811, a gate 812 and a gate insulating layer 813.

[0209] In the manufacturing of metal oxide TFTs, a primary patterning process can process a film layer containing these two metal layers and a source / drain metal layer containing the source and drain. After this primary patterning process, there is a metal layer between the channel layer of the active layer and the source, and also a metal layer between the channel layer of the active layer and the drain. This primary patterning process can reduce the number of steps in the metal oxide TFT manufacturing process. Since the metal layers below the source and drain can be made from the same film layer, the thickness of the metal layer between the source and the channel layer is the same as the thickness of the metal layer between the drain and the channel layer. By making the thickness of the metal layers the same, a balance in the performance of the source and drain can be ensured.

[0210] As one option, as shown in Figure 40, the outer wall S4 of the metal layer 817A between the source 815 and the channel layer 8141 (the outer wall of the metal layer can refer to the side wall on the side that extends outward along the center of the channel layer) and one outer wall S6 of the channel layer 8141 are on the same inclined surface and have the same gradient angle direction, and the outer wall S5 of the metal layer 817B between the drain 816 and the channel layer 8141 and the other outer wall S7 of the channel layer are on the same inclined surface and have the same gradient angle direction. In this way, poor contact between the source, drain and active layer due to the irregularity of the outer surfaces of the active layer and the metal block can be avoided, and consequently the performance of the metal oxide TFT can be improved. Here, outer walls S6 and S4 can be formed in a primary patterning process, and outer walls S7 and S5 can also be formed in a primary patterning process.

[0211] The inner wall S8 of the metal layer 817A between the source 815 and the channel layer 8141 and the inner wall S9 of the source 815 lie on the same inclined surface and have the same gradient angle direction. Similarly, the inner wall S10 of the metal layer 817B between the drain 816 and the channel layer 8141 and the inner wall S11 of the drain 816 lie on the same inclined surface and have the same gradient angle direction. In this way, cracks between the source, drain, and metal layers due to irregular inner surfaces of the source, drain, and metal layers can be avoided, and consequently, the performance of the metal oxide TFT can be improved.

[0212] As one option, as shown in Figure 41, which is a schematic diagram of the structure of another metal oxide TFT according to an embodiment of the present application, the active layer 914 further includes a back channel protective layer 9141, the channel layer 9142 may be amorphous indium gallium tin oxide (a-IGTO) doped with a lanthanide metal and may have high mobility (e.g., greater than 30), the back channel protective layer 9141 is disposed on the channel layer 9142, and the back channel protective layer 9141 may be crystalline indium gallium zinc oxide (p-IGZO), lanthanide metal doped indium zinc oxide (Ln-IGZO), or lanthanide metal doped indium gallium zinc oxide (Ln-IGZO), which can have acid corrosion resistance and improve the stability of the active layer.

[0213] As an option, as shown in Figure 41, the active layer 914 further comprises a light-shielding protective layer 9143, the light-shielding protective layer 9143 comprising lanthanide metal-doped indium zinc oxide (Ln-IZO) or lanthanide metal-doped indium gallium zinc oxide (Ln-IGZO), the light-shielding protective layer 9143 is located on the other side of the channel layer 9142 away from the back channel protective layer 9141, in this way the light from the back surface is irradiated onto the channel layer, further improving the photostability of the active layer and reducing leakage current.

[0214] As described above, the embodiments of this application provide a metal oxide TFT in which the active layer of the metal oxide TFT may include a channel layer containing a lanthanide metal-doped material, and the lanthanide elements in the lanthanide metal-doped material can form a trapped state in the active layer, and photo-induced electrons generated by irradiating the active layer with light can be captured by this trapped state, thereby improving the photo-irradiation stability of the active layer. This solves the problem of low photostability of the active layer of metal oxide TFTs in related technologies and achieves the effect of improving the photostability of the active layer in metal oxide TFTs.

[0215] The foregoing are merely selectable embodiments of this application and do not limit it. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of protection of this application. [Explanation of symbols]

[0216] 111 Base board Gate 112 113 Gate Insulation Layer 114 Metal oxide semiconductor thin film 115 Thin film 116 Active Layer 117 Functional Layers 118 Sources 119 Drain 211 Source / Drain Metal Layer 212 Sources 213 Drain 311 Metal oxide semiconductor thin film 312 Active users 313 Thin film 411 Buffer Layer 412 Metal oxide semiconductor thin film 413 Thin film 414 Active Layer 415 Functional Layers 416 Gate Insulation Structure Gate 417 512 Active layer thin film 513 Active Layer 514 Thin film 515 Gate Insulation Structure Gate 516 611 Active Layer 711 Base board Gate 712 713 Source 714 Drain 715 Active users 716 Gate Insulation Layer 811 Base board Gate 812 813 Gate Insulation Layer 814 Active Layer 815 Source 816 Drain 817A Metal layer 817B Metal layer 914 Active Layer 1171 Metal layer 7151 Channel Layer 8141 channel layer 9141 Back channel protection layer 9142 channel layer 9143 Light-blocking protective layer

Claims

1. The process involves forming an active layer of a metal oxide semiconductor material and a functional layer containing lanthanide elements laminated on the active layer on a base substrate, By performing an annealing treatment on the active layer and the functional layer, the lanthanide elements in the functional layer are diffused into the active layer. Includes, The material of the functional layer includes a single oxide or a composite oxide containing a lanthanide metal. A method for producing metal oxide TFTs, characterized by the following:

2. The method according to claim 1, characterized in that the annealing treatment temperature is 200 to 450°C, the duration is 0.5 to 3 hours, and the atmosphere contains dry air or oxygen.

3. Forming an active layer of a metal oxide semiconductor material and a functional layer containing lanthanide elements laminated on the active layer on the base substrate is: The process involves sequentially forming a metal oxide semiconductor thin film and a thin film containing a lanthanide element on the aforementioned base substrate. Forming a first photoresist pattern on a thin film containing the lanthanide element, The active layer and the functional layer laminated on the active layer are formed by etching the metal oxide semiconductor thin film and the thin film containing the lanthanide element with the same etching solution. Removing the first photoresist pattern, including, The method according to feature 1.

4. After performing annealing on the active layer and the functional layer, The further includes performing a removal process on the aforementioned functional layer. The method according to feature 1.

5. Performing a removal process on the aforementioned functional layer means Forming source and drain metal layers on a base substrate on which the functional layer is formed, Forming a second photoresist pattern on the source / drain metal layer, By performing an etching process on the source / drain metal layer and the functional layer, the source / drain metal layer forms a source / drain, and the portion of the functional layer outside the first region is etched, the first region being the orthographic projection region of the source / drain onto the active layer, and the source / drain includes a source and a drain. including, The method according to feature 4.

6. Forming an active layer of a metal oxide semiconductor material and a functional layer containing lanthanide elements laminated on the active layer on the base substrate is: Forming the active layer on the base substrate, A thin film containing a lanthanide element is formed on a base substrate on which the active layer is formed, the active layer is surrounded by a top surface, a bottom surface, and sides connecting the top surface and the bottom surface, the bottom surface faces the base substrate, and the thin film containing the lanthanide element covers the top surface and sides of the active layer. Includes, Performing an annealing process on the active layer and the functional layer is: This includes annealing the active layer and the thin film containing the lanthanide element to diffuse the lanthanide element from the thin film containing the lanthanide element to the top and side surfaces of the active layer. The method according to feature 1.

7. The method according to any one of claims 1 to 5, characterized in that the material of the functional layer includes one or more of the following: praseodymium oxide, samarium oxide, cerium oxide, indium zinc praseodymium oxide, and indium zinc samarium oxide.

8. A metal oxide TFT, It includes an active layer of a metal oxide semiconductor disposed on a base substrate, and the active layer contains a lanthanide element. The metal oxide TFT further comprises a source and a drain, and a metal layer containing a lanthanide element disposed between the active layer and the source and drain, wherein the source and drain comprises a source and a drain, and the material of the metal layer comprises a single oxide or a composite oxide of a lanthanide metal. A metal oxide TFT characterized by the following features.

9. The metal oxide TFT according to claim 8, characterized in that the lanthanide element is diffused into a material to a specified depth on the surface of the active layer away from the base substrate.

10. The metal oxide TFT according to claim 9, wherein the active layer is a single layer and is a channel layer of the TFT, surrounded by a top surface, a bottom surface, and a side surface connecting the top surface and the bottom surface, and the surface of the active layer away from the base substrate includes the top surface and the side surface of the active layer.

11. The metal oxide TFT according to claim 9, characterized in that the mass percentage per unit volume of the lanthanide element in the active layer gradually decreases along the direction from the top surface of the active layer toward the base substrate.

12. The metal oxide TFT according to any one of claims 8 to 11, characterized in that the lanthanide element comprises one or more of praseodymium, samarium, and cerium.

13. The metal oxide TFT according to claim 9, characterized in that the specified depth is 10 nanometers or less.

14. The metal oxide TFT according to any one of claims 8 to 11, characterized in that the mass percentage of the lanthanide element in the active layer is 0.5% or more and 10% or less.

15. An X-ray detector characterized by comprising a metal oxide TFT according to any one of claims 8 to 14.

16. A display panel characterized by comprising a metal oxide TFT according to any one of claims 8 to 14.

17. Metal oxide TFTs, It includes gate, source, drain and active layers arranged on a base substrate, The active layer is positioned between the gate and the source or drain. The active layer includes a channel layer, and the channel layer is a first metal oxide semiconductor layer. The first metal oxide semiconductor layer contains one or more of indium, gallium, zinc, tin, aluminum, tungsten, zirconium, hafnium, and silicon, and includes a material doped with a lanthanide metal at the upper surface of the channel layer and at a certain thickness from the upper surface, wherein the lanthanide metal content tends to decrease as the distance from the upper surface of the channel layer increases. The active layer further includes a back channel protection layer. The back channel protection layer is disposed on the channel layer, The active layer further comprises a light-shielding protective layer, the light-shielding protective layer comprising lanthanide metal-doped indium zinc oxide or lanthanide metal-doped indium gallium zinc oxide, and the light-shielding protective layer is located on the other side of the channel layer away from the back channel protective layer. A metal oxide TFT characterized by the following features.

18. The source and drain are arranged on the active layer, A metal layer is disposed between the channel layer of the active layer and the source, and the metal layer contains the same lanthanide elements as the lanthanide metal-doped material. A metal layer is disposed between the channel layer and the drain of the active layer, and the metal layer contains the same lanthanide element as the lanthanide metal-doped material. The metal oxide TFT according to feature 17.

19. The metal oxide TFT according to claim 18, characterized in that the thickness of the metal layer between the source and the channel layer is the same as the thickness of the metal layer between the drain and the channel layer.

20. The outer wall of the metal layer between the source and the channel layer and one outer wall of the channel layer are on the same inclined surface and have the same gradient angle direction, and the outer wall of the metal layer between the drain and the channel layer and the other outer wall of the channel layer are on the same inclined surface and have the same gradient angle direction. The inner wall of the metal layer between the source and the channel layer and the inner wall of the source are on the same inclined surface and have the same gradient angle direction, and the inner wall of the metal layer between the drain and the channel layer and the inner wall of the drain are on the same inclined surface and have the same gradient angle direction. The metal oxide TFT according to feature 18.

21. The metal oxide TFT according to claim 17, characterized in that the channel layer is lanthanide metal-doped indium gallium tin oxide, and the back channel protective layer is crystalline indium gallium zinc oxide, lanthanide metal-doped indium zinc oxide, or lanthanide metal-doped indium gallium zinc oxide.

22. The doped lanthanide metal is characterized in that 1 Metal oxide TFTs as described in 7.

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