Method for processing an organic semiconductor layer, and method for fabricating an organic semiconductor device.

Abstract

The present invention improves heat resistance in an organic semiconductor device having a step of forming an aluminum oxide film on an organic semiconductor layer to be in contact therewith. After providing a layer containing an organometallic compound, which is for a mask of an organic semiconductor layer and represented by general formula (G1), on an organic semiconductor layer, a heating step is performed. (In general formula (G1), Ar represents a substituted or unsubstituted C6-30 aryl group or a substituted or unsubstituted C1-30 heteroaryl group, X represents oxygen or sulfur, M represents a metal, n represents an integer of 1 to 5, and the valence of metal M equals n. In addition, when n is 2 or more, a plurality of Ar's may be the same or different, and X may be the same or different. When Ar is a substituted or unsubstituted C1-30 heteroaryl group, a heteroatom in the heteroaryl group may be coordinately bonded to the metal M.)

Description

[Technical Field]

[0001] One aspect of the present invention relates to an organometallic compound for a protective layer, a protective layer, a method for processing an organic semiconductor layer, a method for processing an EL layer, a method for manufacturing an organic semiconductor device, and a method for manufacturing an organic EL device. However, one aspect of the present invention is not limited to the above-mentioned technical field. The technical field of one aspect of the invention disclosed herein relates to a product, a method, or a method of manufacture. Alternatively, one aspect of the present invention relates to a process, a machine, a manufacture, or a composition of matter. More specifically, examples of the technical field of one aspect of the present invention disclosed herein include semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, energy storage devices, memory devices, imaging devices, methods for driving them, or methods for manufacturing them. [Background technology]

[0002] The practical application of light-emitting devices (organic EL devices) that utilize electroluminescence (EL) using organic compounds is progressing. The basic structure of these organic EL devices is an organic compound layer (EL layer) containing a light-emitting material sandwiched between a pair of electrodes. By applying a voltage to this device, carriers are injected, and by utilizing the recombination energy of these carriers, light emission can be obtained from the light-emitting material.

[0003] Because these light-emitting devices are self-emissive, using them as pixels in a display offers advantages over liquid crystal displays, such as higher visibility and the elimination of the need for a backlight, making them particularly suitable for flat-panel displays. Another major advantage of displays using such light-emitting devices is that they can be manufactured to be thin and lightweight. Furthermore, they are characterized by their extremely fast response speed.

[0004] Furthermore, since these light-emitting devices can form a light-emitting layer continuously in two dimensions, they can produce light in a planar manner. This is a feature that is difficult to obtain with point light sources such as incandescent bulbs and LEDs, or line light sources such as fluorescent lamps, and therefore has high value as a planar light source that can be applied to lighting and other applications.

[0005] While light-emitting devices using such devices are suitable for various electronic devices, research and development are underway to find light-emitting devices with even better characteristics.

[0006] To obtain higher-resolution light-emitting devices using organic EL devices, research is being conducted on patterning organic layers using photolithography methods with photoresists, as an alternative to deposition methods using metal masks. By using photolithography, it is possible to obtain high-resolution light-emitting devices with EL layer spacing of several micrometers (see, for example, Patent Document 1). [Prior art documents] [Patent Documents]

[0007] [Patent Document 1] Special Publication No. 2018-521459 [Overview of the project] [Problems that the invention aims to solve]

[0008] When patterning organic layers using photolithography, a protective film is sometimes applied to prevent damage to the organic layer. Applying a certain amount of heat during the formation of this film results in a better film with less variation in in-plane properties; however, if the heat resistance of the organic layer is low, sufficient heat cannot be applied.

[0009] Therefore, one aspect of the present invention aims to improve the heat resistance during processing of an organic semiconductor device. Alternatively, one aspect of the present invention aims to provide an organometallic compound that can be used in a layer capable of improving the heat resistance during processing of an organic semiconductor device. Alternatively, one aspect of the present invention aims to provide a protective layer capable of improving the heat resistance during processing of an organic semiconductor device. Another aspect aims to provide a method for processing an organic semiconductor layer that can produce an organic semiconductor device having good properties. A third aspect aims to provide a method for manufacturing an organic semiconductor device or an organic EL device that can produce an organic semiconductor device or an organic EL device having good properties. [Means for solving the problem]

[0010] One aspect of the present invention is an organometallic compound for a protective layer that improves the heat resistance of an organic semiconductor layer represented by the following general formula (G1).

[0011] [ka]

[0012] However, in general formula (G1), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, X represents oxygen or sulfur, M represents a metal, and n represents an integer from 1 to 5, with the valency of metal M being the same as n. Note that when n is 2 or greater, the multiple Ars may be the same or different, and X may be the same or different. When Ar is a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, the heteroatom of the heteroaryl group may be coordinately bonded to metal M.

[0013] Alternatively, another aspect of the present invention is an organometallic compound for a protective layer of an organic semiconductor layer, wherein the organometallic compound represented by the general formula (G1) is an organometallic compound represented by the following general formula (G2).

[0014]

Chem.

[0015] However, in general formula (G2), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, M represents a metal, n represents an integer of 1 to 3, and the valence of metal M is the same as n. When n is 2 or more, the plurality of Ars may be the same or different. When Ar is a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, the heteroatom of the heteroaryl group and the metal M may form a coordination bond.

[0016] Alternatively, another aspect of the present invention is an organometallic compound for a protective layer of an organic semiconductor layer including a photoelectric conversion layer in the above configuration.

[0017] Alternatively, another aspect of the present invention is an organometallic compound for a protective layer of an EL layer where the organic semiconductor layer is an EL layer in the above configuration.

[0018] Alternatively, another aspect of the present invention is a protective layer formed on an organic semiconductor layer, including an organometallic compound represented by the following general formula (G1), and used to improve the heat resistance of the organic semiconductor layer.

[0019]

Chem.

[0020] However, in general formula (G1), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, X represents oxygen or sulfur, M represents a metal, and n represents an integer from 1 to 5, with the valency of metal M being the same as n. Note that when n is 2 or greater, the multiple Ars may be the same or different, and X may be the same or different. When Ar is a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, the heteroatom of the heteroaryl group may be coordinately bonded to metal M.

[0021] Alternatively, another aspect of the present invention is a method for processing an organic semiconductor layer, comprising the steps of: forming an organic semiconductor layer on a first electrode; forming a protective layer on the organic semiconductor layer containing an organometallic compound represented by the following general formula (G1); applying heat of 100°C or higher to the organic semiconductor layer; and removing the protective layer.

[0022] [ka]

[0023] However, in general formula (G1), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, X represents oxygen or sulfur, M represents a metal, and n represents an integer from 1 to 5, with the valency of metal M being the same as n. Note that when n is 2 or greater, the multiple Ars may be the same or different, and X may be the same or different. When Ar is a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, the heteroatom of the heteroaryl group may be coordinately bonded to metal M.

[0024] Alternatively, another aspect of the present invention is a method for processing an organic semiconductor layer, wherein, in the above configuration, water or a water-based liquid is used to remove the protective layer.

[0025] Alternatively, another aspect of the present invention is a method for processing an organic semiconductor layer, comprising the step of forming an aluminum oxide film on the protective layer in the above configuration.

[0026] Alternatively, another aspect of the present invention is a method for processing an organic semiconductor layer, wherein, in the above configuration, the step of applying heat of 100°C or higher to the organic semiconductor layer is the step of forming an aluminum oxide film on the protective layer.

[0027] Alternatively, another aspect of the present invention is a method for processing an organic semiconductor layer, wherein, in the above configuration, after the step of forming an aluminum oxide film on the protective layer, the organic semiconductor layer is processed using the aluminum oxide film, and the protective layer and the aluminum oxide film are removed using water or a liquid with water as a solvent.

[0028] Alternatively, another aspect of the present invention is a method for processing an organic semiconductor layer, comprising the steps of: forming an aluminum oxide film on the protective layer; forming a metal film or a metal compound film on the aluminum oxide film; processing the shape of the organic semiconductor layer using the aluminum oxide film and the metal film or metal compound film; and removing the protective layer and the aluminum oxide film using water or a water-based liquid.

[0029] Alternatively, another aspect of the present invention is a method for processing an organic semiconductor layer, in which, after the step of processing the shape of the organic semiconductor layer, the metal film or the metal compound film is removed, and the protective layer and the aluminum oxide film are removed using water or a water-based liquid.

[0030] Alternatively, another aspect of the present invention is a method for processing an organic semiconductor layer in which water is used in the step of removing the protective layer and the aluminum oxide film using water or a water-based liquid as a solvent, in the above configuration.

[0031] Alternatively, another aspect of the present invention is a method for processing an organic semiconductor layer, wherein, in the above configuration, a step is taken to remove part or all of the aluminum oxide film using an alkaline solution or an acidic solution before the step of removing the protective layer and the aluminum oxide film using water.

[0032] Alternatively, another aspect of the present invention is a method for processing an organic semiconductor layer in which the aluminum oxide film is formed by atomic deposition, in the above configuration.

[0033] Alternatively, another aspect of the present invention is a method for processing an organic semiconductor layer in which the protective layer is formed by a vacuum deposition method, in the above configuration.

[0034] Alternatively, another aspect of the present invention is a method for processing an organic semiconductor layer in which, in the above configuration, the organometallic compound represented by general formula (G1) is an organometallic compound represented by the following general formula (G2).

[0035] [ka]

[0036] However, in general formula (G2), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, M represents a metal, and n represents an integer from 1 to 3, where the valency of the metal M is the same as n. Note that when n is 2 or greater, the multiple Ars may be the same or different. When Ar is a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, the heteroatom of the heteroaryl group may be coordinately bonded to the metal M.

[0037] Alternatively, another aspect of the present invention is a method for processing an organic semiconductor layer in which the organic semiconductor layer includes a photoelectric conversion layer, in the above configuration.

[0038] Alternatively, another aspect of the present invention is a method for processing an EL layer in which the organic semiconductor layer is an EL layer in the above configuration.

[0039] Alternatively, another aspect of the present invention is a method for processing an EL layer in which, in the above configuration, the EL layer has a laminated structure, and the EL layer has, in order from the first electrode side, a hole injection layer, a hole transport layer, an emissive layer and an electron transport layer.

[0040] Alternatively, another aspect of the present invention is a method for processing an EL layer in which the electron transport layer comprises NBPhen, in the above configuration.

[0041] Alternatively, another aspect of the present invention is a step of forming an organic semiconductor film on a first electrode; a step of forming a protective film on the organic semiconductor film containing an organometallic compound represented by the following general formula (G1); a step of forming a first aluminum oxide film on the protective film; a step of forming a metal film or metal compound film on the first aluminum oxide film; a step of making a photomask on the metal film or metal compound film; a step of etching the metal film or metal compound film using the photomask to form a metal layer or metal compound layer that overlaps with the first electrode; a step of removing the photomask; and using the metal layer or metal compound layer as a mask, the first aluminum oxide film, the protective film and the The method for manufacturing an organic semiconductor device comprises the steps of: etching an organic semiconductor film to form an aluminum oxide layer, a protective layer, and an organic semiconductor layer; removing the metal layer or the metal compound layer; forming an organic resin film covering the first electrode, the organic semiconductor layer, the protective layer, and the first aluminum oxide layer; forming openings in the organic resin film that overlap the first electrode, the organic semiconductor layer, the protective layer, and the first aluminum oxide layer; and removing the protective layer and the first aluminum oxide layer that overlap the openings, wherein after forming the protective film and before removing the protective layer, the organic semiconductor film or the organic semiconductor layer is subjected to heat of 100°C or higher.

[0042] [ka]

[0043] However, in general formula (G1), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, X represents oxygen or sulfur, M represents a metal, and n represents an integer from 1 to 5, with the valency of metal M being the same as n. Note that when n is 2 or greater, the multiple Ars may be the same or different, and X may be the same or different. When Ar is a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, the heteroatom of the heteroaryl group may be coordinately bonded to metal M.

[0044] Alternatively, another aspect of the present invention is a method for manufacturing an organic semiconductor device in which, in the step of removing the protective layer and the first aluminum oxide layer that overlap the opening in the above configuration, water or a liquid with water as a solvent is used.

[0045] Alternatively, another aspect of the present invention is a method for manufacturing an organic semiconductor device in which, in the above configuration, water is used in the step of removing the protective layer and the first aluminum oxide layer that overlap the opening using water or a water-based liquid as a solvent.

[0046] Alternatively, another aspect of the present invention is a method for manufacturing an organic semiconductor device, wherein, in the above configuration, a step is made to remove part or all of the first aluminum oxide layer using an alkaline solution or an acidic solution before the step of removing the protective layer and the aluminum oxide layer overlapping the opening using water.

[0047] Alternatively, another aspect of the present invention, in the above configuration, comprises the steps of: forming an organic semiconductor film on a first electrode; forming a protective film on the organic semiconductor film containing an organometallic compound represented by the following general formula (G1); forming a first aluminum oxide film on the protective film; forming a metal film or metal compound film on the first aluminum oxide film; fabricating a photomask on the metal film or metal compound film; etching the metal film or metal compound film using the photomask to form a metal layer or metal compound layer overlapping the first electrode; removing the photomask; etching the first aluminum oxide film, the protective film and the organic semiconductor film using the metal layer or metal compound layer as a mask to form a first aluminum oxide layer, the protective layer and the organic semiconductor layer; and A method for manufacturing an organic semiconductor device, comprising the steps of: removing a metal layer or the metal compound layer; forming a second aluminum oxide film covering the first electrode, the organic semiconductor layer, the protective layer, and the first aluminum oxide layer; forming an organic resin film covering the first electrode, the organic semiconductor layer, the protective layer, the first aluminum oxide layer, and the second aluminum oxide film; forming openings in the organic resin film that overlap the first electrode, the organic semiconductor layer, the protective layer, the first aluminum oxide layer, and the second aluminum oxide film; and removing the protective layer, the first aluminum oxide layer, and the second aluminum oxide film that overlap the openings, wherein after forming the protective film and before removing the protective layer, the organic semiconductor film or the organic semiconductor layer is subjected to heat of 100°C or higher.

[0048] [ka]

[0049] However, in general formula (G1), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, X represents oxygen or sulfur, M represents a metal, and n represents an integer from 1 to 5, with the valency of metal M being the same as n. Note that when n is 2 or greater, the multiple Ars may be the same or different, and X may be the same or different. When Ar is a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, the heteroatom of the heteroaryl group may be coordinately bonded to metal M.

[0050] Alternatively, another aspect of the present invention is a method for manufacturing an organic semiconductor device in which, in the above configuration, water or a liquid with water as a solvent is used in the step of removing the protective layer, the first aluminum oxide layer, and the second aluminum oxide film that overlap the opening.

[0051] Alternatively, another aspect of the present invention is a method for manufacturing an organic semiconductor device in which water is used in the step of removing the protective layer, the first aluminum oxide layer, and the second aluminum oxide film that overlap the opening, using water or a water-based liquid as a solvent, in the above configuration.

[0052] Alternatively, another aspect of the present invention is a method for manufacturing an organic semiconductor device, wherein, in the above configuration, a step is taken to remove part or all of the second aluminum oxide film and the first aluminum oxide layer using an alkaline solution or an acidic solution before a step is taken to remove the protective layer and the first aluminum oxide layer overlapping the opening using water.

[0053] Alternatively, another aspect of the present invention is a method for fabricating an organic semiconductor device in which the second aluminum oxide film is deposited by atomic layer deposition in the above configuration.

[0054] Alternatively, another aspect of the present invention is a method for fabricating an organic semiconductor device in which, in the above configuration, the organometallic compound represented by general formula (G1) is an organometallic compound represented by the following general formula (G2).

[0055] [ka]

[0056] However, in general formula (G2), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, M represents a metal, and n represents an integer from 1 to 3, where the valency of the metal M is the same as n. Note that when n is 2 or greater, the multiple Ars may be the same or different. When Ar is a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, the heteroatom of the heteroaryl group may be coordinately bonded to the metal M.

[0057] Alternatively, another aspect of the present invention is a method for fabricating an organic semiconductor device in which the first aluminum oxide film is deposited by atomic layer deposition in the above configuration.

[0058] Alternatively, another aspect of the present invention is a method for manufacturing an organic semiconductor device in which the protective film is formed by vacuum deposition in the above configuration.

[0059] Alternatively, another aspect of the present invention is a method for manufacturing an organic semiconductor device in which, in the above configuration, the step of forming a first aluminum oxide film on the protective film is a step of applying heat of 100°C or more to the organic semiconductor film or the organic semiconductor layer.

[0060] Alternatively, another aspect of the present invention is a method for manufacturing an organic semiconductor device in which, in the above configuration, the organic semiconductor film or the organic semiconductor layer is subjected to a heat of 120°C or higher during the step of applying a heat of 100°C or higher to the organic semiconductor film or the organic semiconductor layer.

[0061] Alternatively, another aspect of the present invention is a method for manufacturing an organic semiconductor device in which the organic semiconductor layer includes a photoelectric conversion layer, in the above configuration.

[0062] Alternatively, another aspect of the present invention is a method for processing an EL layer in which the organic semiconductor layer is an EL layer in the above configuration.

[0063] Alternatively, another aspect of the present invention is a method for manufacturing an organic EL device in which, in the above configuration, the EL layer has a stacked structure, and the EL layer has, in order from the first electrode side, a hole injection layer, a hole transport layer, an emissive layer, and an electron transport layer.

[0064] Alternatively, another aspect of the present invention is a method for fabricating an organic EL device in which the electron transport layer comprises NBPhen, in the above configuration.

[0065] In this specification, the term "light-emitting device" includes image display devices using organic EL devices. Furthermore, modules in which a connector, such as an anisotropic conductive film or TCP (Tape Carrier Package), is attached to an organic EL device, modules in which a printed circuit board is provided at the end of the TCP, or modules in which an IC (integrated circuit) is directly mounted to an organic EL device using the COG (Chip On Glass) method may also be included as light-emitting devices. Additionally, lighting fixtures and the like may have light-emitting devices. [Effects of the Invention]

[0066] In one aspect of the present invention, the heat resistance during processing of an organic semiconductor device can be improved. Alternatively, in one aspect of the present invention, an organometallic compound can be used in a layer that can improve the heat resistance during processing of an organic semiconductor device. Alternatively, in one aspect of the present invention, a protective layer can be provided that can improve the heat resistance during processing of an organic semiconductor device. A method for processing an organic semiconductor layer that can produce an organic semiconductor device having good properties can be provided. A method for manufacturing an organic semiconductor device or an organic EL device that can produce an organic semiconductor device or an organic EL device having good properties can be provided.

[0067] Furthermore, the description of this effect does not preclude the existence of other effects. Moreover, one aspect of the present invention does not necessarily have to possess all of these effects. Other effects will become clear from the description in the specification, drawings, and claims, and it is possible to extract other effects from the description in the specification, drawings, and claims. [Brief explanation of the drawing]

[0068] Figures 1A to 1E illustrate the film processing method. Figures 2A to 2E illustrate the film processing method. Figures 3A to 3C illustrate organic semiconductor devices. Figures 4A to 4D are diagrams illustrating the light-emitting device. Figure 5 is a diagram illustrating the light-emitting device. Figures 6A to 6F illustrate the methods for fabricating organic EL devices and light-emitting devices. Figures 7A to 7F illustrate the methods for fabricating organic EL devices and light-emitting devices. Figure 8 is a diagram representing an organic EL device. Figures 9A and 9B represent an active matrix type light-emitting device. Figures 10A and 10B represent an active matrix type light-emitting device. Figure 11 is a diagram representing an active matrix type light-emitting device. Figures 12A, 12B1, 12B2, and 12C are diagrams representing electronic devices. Figures 13A, 13B, and 13C are diagrams representing electronic devices. Figure 14 is a diagram representing an in-vehicle display device and lighting system. Figures 15A and 15B are diagrams representing electronic devices. Figures 16A, 16B, and 16C are diagrams representing electronic devices. Figure 17 is an optical microscope image (100x magnification) of sample 1. Figure 18 is an optical microscope image (100x magnification) of sample 2. Figure 19 is an optical microscope image (100x magnification) of sample 3. Figure 20 is an optical microscope image (100x magnification) of sample 4. Figure 21 is an optical microscope image (100x magnification) of sample 5. Figure 22 is an optical microscope image (100x magnification) of sample 6. Figure 23 is an optical microscope image (100x magnification) of sample 7. [Modes for carrying out the invention]

[0069] The embodiments of the present invention will be described in detail below with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and that its form and details can be modified in various ways without departing from the spirit and scope of the present invention. Accordingly, the present invention shall not be interpreted as being limited to the contents of the embodiments shown below.

[0070] Furthermore, in this specification, materials that have not undergone post-molding shaping are generally referred to as "films," while those that have undergone shaping are generally referred to as "layers." However, these distinctions are primarily for clarity regarding the progression of the process, and there is no significant difference between them; therefore, "film" can be interpreted as "layer," and "layer" as "film." In particular, when describing materials that do not undergo any processing steps, both terms are considered synonymous.

[0071] (Embodiment 1) Vacuum deposition using a metal mask (mask deposition) is widely used as one method for fabricating organic semiconductor films into predetermined shapes. However, with the increasing demand for higher density and resolution, mask deposition is approaching its limits in terms of resolution due to various reasons, such as alignment accuracy and spacing issues with the substrate. On the other hand, by processing the shape of the organic semiconductor film using photolithography, it is possible to form more intricate patterns. Furthermore, because it is easy to process large areas, research on processing organic semiconductor films using photolithography is also progressing.

[0072] However, many problems must be overcome in order to process the shape of an organic semiconductor film using photolithography. These problems include, for example, the effects of exposure of the organic semiconductor film to air, the effects of light irradiation when exposing the photosensitive resin, the effects of the developer to which the exposed photosensitive resin is exposed when developing it, and the effects of metal film deposition when a metal film is formed to reduce the effects of the developer.

[0073] The reason these effects are considered problematic is that they can lead to situations such as the organic semiconductor film itself disappearing, or even if it doesn't disappear, the organic semiconductor film being damaged, resulting in a significant deterioration of the properties of the devices fabricated afterward.

[0074] One way to solve the above-mentioned problems is to prepare a mask film in contact with the organic semiconductor film before performing the problematic process described above. As the mask film, inorganic films such as metal films and metal compound films can be suitably used, with aluminum oxide films being particularly preferred. Aluminum oxide films can be formed densely and have a high ability to block liquids and gases, thus suppressing the adverse effects of the above-mentioned process. Furthermore, since aluminum oxide films can be formed and removed using methods that cause minimal damage to the organic semiconductor film, they are highly suitable as mask films for organic semiconductor film layers. Regarding the method for forming the aluminum oxide film, atomic deposition (ALD) is preferred because it allows for the formation of a denser film and causes less damage to the organic semiconductor film.

[0075] In the aluminum oxide film deposition method described above, deposition at a relatively high temperature allows for the formation of a film with uniform thickness and density within the deposition plane. However, due to the low heat resistance of organic semiconductor films, it was necessary to deliberately lower the deposition temperature and use films with less-than-ideal in-plane uniformity. Mask films with poor in-plane uniformity may have different etching rates depending on the location, which exacerbates problems caused by the mask film removal process. Specifically, these include deterioration of the properties of the organic semiconductor layer as a result of exposure to the mask layer removal process, and an increase in the driving voltage due to the mask film remaining on the organic semiconductor layer.

[0076] Therefore, in one aspect of the present invention, a film (protective film) containing an organometallic compound having a specific structure capable of improving the heat resistance of the organic semiconductor film is used on the organic semiconductor film.

[0077] As such organometallic compounds, it is preferable to use organometallic compounds represented by the following general formula (G1).

[0078] [ka]

[0079] However, in general formula (G1), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, X represents oxygen or sulfur, M represents a metal, and n represents an integer from 1 to 5, with the valency of metal M being the same as n. Note that when n is 2 or greater, the multiple Ars may be the same or different, and X may be the same or different. When Ar is a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, the heteroatom of the heteroaryl group may be coordinately bonded to metal M.

[0080] By providing a layer (protective layer) containing an organometallic compound represented by the above general formula (G1) on an organic semiconductor film, the heat resistance of the organic semiconductor film can be improved. This allows for an increase in the film deposition temperature when forming the mask film, resulting in a mask film with uniform film quality across the plane, and suppressing the occurrence of defects caused by the mask film removal process. Furthermore, since the heating temperature can be increased in other processes as well, process margins are widened, enabling the manufacture of more stable products.

[0081] Furthermore, since organometallic compounds having the above structure can be removed from the organic semiconductor film using water or a water-based liquid, damage to the organic semiconductor layer originating from the mask layer removal process can be suppressed, thereby preventing deterioration of the characteristics of the subsequently fabricated device.

[0082] Furthermore, in the organometallic compound represented by the above general formula (G1), X being an oxygen atom is preferable because it has a strong interaction with water or a liquid with water as a solvent, making it easier to remove from the organic semiconductor layer. That is, the organometallic compound represented by the following general formula (G2) is preferred.

[0083] [ka]

[0084] However, in general formula (G2), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, M represents a metal, and n represents an integer from 1 to 3, where the valency of the metal M is the same as n. Note that when n is 2 or greater, the multiple Ars may be the same or different. When Ar is a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, the heteroatom of the heteroaryl group may be coordinately bonded to the metal M.

[0085] In the above general formulas (G1) or (G2), M is preferably the same element as the metal element contained in the material used for the mask layer, as this is expected to improve adhesion. That is, if the mask layer is an aluminum oxide film, M is preferably aluminum.

[0086] Furthermore, as the aryl group having 6 to 30 carbon atoms, phenyl group, biphenyl group, terphenyl group, naphthyl group, anthranyl group, fluorenyl group, dibenzofluorenyl group, diphenylfluorenyl group, spirobifluorenyl group, pyrenyl group, phenantrenyl group, triphenylenyl group, perilenyl group, tetracenyl group, and chrysenyl group are preferred. Furthermore, as heteroaryl groups having 1 to 30 carbon atoms, groups having a pyridine ring, pyrazine ring, pyrimidine ring, pyridazine ring, triazine ring, quinoline ring, quinazoline ring, isoquinoline ring, pyrrole ring, naphthyridine ring, phenantholidine ring, quinoxaline ring, imidazole ring, benzimidazole ring, oxazole ring, isoxazole ring, thiazole ring, isothiazole ring, or benzofuran ring are preferred. Pyridyl and quinolyl groups are more preferred because they readily form coordinate bonds with metal M, and 2-pyridyl and 8-quinolyl groups are even more preferred for forming stable coordinate bonds with metal M. When an aryl group having 6 to 30 carbon atoms or a heteroaryl group having 1 to 30 carbon atoms has substituents, examples of substituents include alkyl groups having 1 to 6 carbon atoms, cycloalkyl groups having 3 to 10 carbon atoms, alkoxy groups having 1 to 6 carbon atoms, and halogens.

[0087] Examples of organometallic compounds represented by the above general formulas (G1) and (G2) include those represented by the following structural formulas (100) to (115).

[0088] [ka]

[0089] In particular, (8-quinolinolato)lithium (abbreviated as Liq) and tris(8-quinolinolato)aluminum (abbreviated as Alq3) are very preferred materials because they are inexpensive, have been used for a long time, and can be easily removed with water.

[0090] It should be noted that Liq and Alq3 are generally known to be almost insoluble in water. However, it has been found that Liq and Alq3 formed on an organic semiconductor layer as a vapor-deposited film can be easily removed with water, making them very suitable as a protective layer for the organic semiconductor layer used to remove aluminum oxide films.

[0091] Furthermore, since the heat resistance improvement effect is enhanced when the protective layer has a certain thickness, it is preferable that the thickness be 5 nm or more, preferably 10 nm or more, and more preferably 15 nm or more. Also, since the heat resistance improvement effect becomes equivalent at a certain thickness or greater, considering ease of removal, it is preferable that the thickness be 30 nm or less, preferably 20 nm or less.

[0092] Furthermore, organometallic compounds having the above structure possess electron transport or electron injection properties, and therefore, when used in a position corresponding to the space between the organic semiconductor layer and the cathode, they are less likely to adversely affect the properties of the organic semiconductor device even if they are not completely removed.

[0093] By forming a film containing such organometallic compounds on an organic semiconductor layer, the heat resistance of the organic semiconductor layer can be improved. This allows for the formation of a mask film with good film quality at high temperatures, suppressing the occurrence of defects during mask layer removal. Furthermore, since the heating temperature can be increased in other processes as well, process margins are widened, enabling the production of more stable products.

[0094] Furthermore, the protective film made of the aforementioned organometallic compound can be easily removed from the organic semiconductor, and even if it is not completely removed, it does not have a significant impact on the organic semiconductor device formed later. Therefore, it is possible to realize ultra-high-definition and high-performance devices processed by photolithography.

[0095] The configuration of this embodiment can be used in appropriate combination with other configurations.

[0096] (Embodiment 2) In this embodiment, a method for processing an organic semiconductor layer according to one aspect of the present invention will be described with reference to Figures 1 and 2.

[0097] First, an organic semiconductor film 151 is formed on the underlayer film 150 (Figure 1A). The underlayer film may be an insulating film or a conductive film, depending on the device to be fabricated later. The organic semiconductor film 151 may be formed by a dry method such as vapor deposition, or by a wet method such as spin coating.

[0098] Next, a protective layer 152 containing an organometallic compound represented by the general formula (G1) or the general formula (G2) is formed on the organic semiconductor film 151 (Figure 1A). The protective layer 152 is preferably formed by vacuum deposition.

[0099] Next, a mask film is formed on the protective layer 152 (Figure 1A). A metal film, a metal compound film, etc., can be used as the mask film, and an aluminum oxide film is particularly preferred. Furthermore, it is preferable to deposit the mask film 153 by a method that causes little damage to the organic semiconductor film 151, and it is more preferable that the mask film 153 is an aluminum oxide film deposited by the ALD method.

[0100] In one aspect of the present invention, the heat resistance of the organic semiconductor film 151 is improved by providing a protective layer 152 on the organic semiconductor film 151. As a result, the temperature during film formation of the mask film 153 can be increased, and a mask film 153 with better film quality can be formed than in a configuration without the protective layer 152. When forming the mask film 153 with an aluminum oxide film by the ALD method, it is preferable to form the film at a temperature of 80°C or higher, preferably 100°C or higher. In one aspect of the present invention, since the heat resistance of the organic semiconductor film 151 is improved by providing a protective layer 152 on the organic semiconductor film 151, it is possible to form the film at a temperature of 80°C or higher, preferably 100°C or higher.

[0101] This improves the barrier properties of the mask film 153, further reducing the damage inflicted on the organic semiconductor film 151 by subsequent processes. It also reduces in-plane variation of the mask film 153 and minimizes the difference in etching rates within the mask film 153, thereby suppressing damage to the organic semiconductor film 151 due to over-etching when removing the mask film 153, or the high voltage caused by residual mask film 153. Furthermore, the improved film quality leads to a reduction in etching rate or etching rate variation, widening the process margin and stabilizing the process.

[0102] Furthermore, the improved heat resistance of the organic semiconductor film 151 allows for processing at higher temperatures than before, not only during the formation of the mask layer 153, but also at any point after the formation of the protective layer 152 and before its removal. This makes it possible to apply processes that previously had to be heated at lower temperatures or that could not be selected due to the heat resistance of the organic semiconductor film 151. This enables the construction of a more stable manufacturing process, contributing to improved reliability and cost reduction.

[0103] It is preferable to form a metal film or metal compound film 154 on the mask film 153 (Figure 1B). Since the presence of the protective layer 152 and the mask film 153 suppresses damage to the organic semiconductor film 151, a film deposition method that causes relatively large damage to the deposition surface, such as sputtering, can be selected. As materials constituting the metal film or metal compound film 154, for example, metal oxides such as silicon, silicon nitride, silicon oxide, tungsten, titanium, molybdenum, tantalum, tantalum nitride, an alloy containing molybdenum and niobium, an alloy containing molybdenum and tungsten, or indium gallium zinc oxide (In-Ga-Zn oxide, also written as IGZO) can be used. Furthermore, indium oxide, indium zinc oxide (In-Zn oxide), indium tin oxide (In-Sn oxide), indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), etc., can be used. Alternatively, indium tin oxide containing silicon can also be used.

[0104] Subsequently, a photosensitive resin is applied to the metal film or metal compound film 154 to form a resin film 155 (Figure 1C). The photosensitive resin may be either a positive-type resist or a negative-type resist.

[0105] Next, exposure is performed according to the photosensitivity of the resin, and development is carried out to form a photomask layer 155a (Figure 1D). The metal film or metal compound film 154 is then etched using the photomask layer 155a to form a metal layer or metal compound layer 154a (Figure 1E). The etching of the metal film or metal compound film 154 may be performed by wet etching or dry etching. Furthermore, it is preferable to select and use conditions in which the selectivity ratio of the metal film or metal compound film 154 is higher than that of the mask film 153.

[0106] After forming the metal layer or metal compound layer 154a, the photomask layer 155a is removed (Figure 2A). The presence of the metal film or metal compound film 154 and the mask film 153 prevents the organic semiconductor film 151 from being destroyed or damaged during the process of forming and removing the photomask layer 155a, thus enabling the fabrication of organic semiconductor devices with good properties.

[0107] Subsequently, the metal film or metal compound film 154a is used as a mask, and etching is performed to form the organic semiconductor layer 151a, the protective layer 152a, and the mask layer 153a (Figure 2B). These etchings may be performed by wet etching or dry etching, but dry etching is preferred.

[0108] Once the processing of the organic semiconductor layer 151a is complete, the metal layer or metal compound layer 154a is removed (Figure 2C). The removal of the metal layer or metal compound layer 154a can be performed by etching, and either wet etching or dry etching is acceptable, but dry etching is preferred. For this etching, it is preferable to select and use conditions in which the selectivity ratio of the metal layer or metal compound layer 154a is higher than that of the mask layer 153a.

[0109] After removing the metal layer or metal compound layer 154a, the mask layer 153a is removed (Figure 2D). The mask layer 153a can be removed by etching, either by wet etching or dry etching. If the mask layer 153a is an aluminum oxide layer, wet etching using an alkaline solution or an acidic solution is preferable, and wet etching using an alkaline solution is even more preferable. The presence of the protective layer 152a prevents the surface of the organic semiconductor layer 151a from being exposed to alkaline or acidic solutions, thus preventing degradation of its properties. Furthermore, if the mask layer 153a was deposited by the ALD method at a temperature of 100°C or higher, the variation in film quality within the plane is small, allowing the mask layer 153a to be removed without excessive over-etching, thereby suppressing damage to the organic semiconductor layer 151a. Alternatively, because the variation in film quality within the plane is small, residue of the mask layer 153a due to insufficient etching is less likely to remain, preventing the subsequent fabrication of high-voltage semiconductor devices. Furthermore, the mask layer 153a may be processed in such a way that a small amount remains on the protective layer 152a. In this case, it can be easily removed together with the protective layer 152a during the subsequent removal process.

[0110] Finally, the protective layer 152a is removed by treating it with water or a water-based liquid (Figure 2E). The removal method involves immersing the layer in water or a water-based liquid for a certain period of time, followed by rinsing with a shower of pure water. This process alone is sufficient to remove the protective layer 152a. Water is preferable as the liquid used for removal because it causes less damage to the organic semiconductor layer 151a.

[0111] Because the organic semiconductor layer 151a processed by this process suffers minimal damage during processing, it can be used to create an organic semiconductor device with excellent properties.

[0112] The organic semiconductor layer 151a can be used in an organic TFT having an organic semiconductor layer 151a, a gate insulating layer 161, a gate electrode 162, a source electrode and a drain electrode 163, 164 provided on an insulating layer 160, as shown in Figure 3A; a photoelectric conversion device such as a solar cell or photosensor having a first electrode 165 and a second electrode 166 and a photoelectric conversion layer 167 provided on an insulating layer 160, as shown in Figure 3B; and an organic EL device having a first electrode 165, a second electrode 166 and a light-emitting layer 168 provided on an insulating layer 160, as shown in Figure 3C.

[0113] The configuration of this embodiment can be used in appropriate combination with other configurations.

[0114] (Embodiment 3) [Example of manufacturing method] In this embodiment, an example of a method for manufacturing an organic semiconductor device according to one aspect of the present invention will be described with reference to the drawings. Here, a light-emitting device 450 as shown in Figure 4 will be used as an example. The light-emitting device 450 is a light-emitting device having an organic EL device in which the organic semiconductor layer in Embodiment 1 or Embodiment 2 is an EL layer. That is, what is referred to as the EL layer below corresponds to the organic semiconductor layer described above. Note that by using an organic semiconductor layer including a photoelectric conversion layer instead of the EL layer, it can also be used as a photosensor. A photosensor and an organic EL device may be simultaneously contained within the light-emitting device.

[0115] Figure 4A shows a schematic top view of the light-emitting device 450. The light-emitting device 450 has multiple organic EL devices 110R that emit red light, organic EL devices 110G that emit green light, and organic EL devices 110B that emit blue light. In Figure 4A, the labels R, G, and B are added within the light-emitting area of ​​each organic EL device to simplify the distinction between them.

[0116] Organic EL devices 110R, 110G, and 110B are each arranged in a matrix. Figure 4A shows a so-called stripe arrangement in which organic EL devices of the same color are arranged in one direction. Note that the arrangement method of organic EL devices is not limited to this, and other arrangement methods such as delta arrangement and zigzag arrangement may be applied, or a pentile arrangement may be used.

[0117] Organic EL devices 110R, 110G, and 110B are arranged in the X direction. Additionally, organic EL devices of the same color are arranged in the Y direction, which intersects the X direction.

[0118] Organic EL device 110R, organic EL device 110G, and organic EL device 110B are organic EL devices having the above configuration.

[0119] Figure 4B is a schematic cross-sectional view corresponding to the dashed line A1-A2 in Figure 4A, and Figure 4C is a schematic cross-sectional view corresponding to the dashed line B1-B2.

[0120] Figure 4B shows cross-sections of organic EL devices 110R, 110G, and 110B. Organic EL device 110B has a first electrode (pixel electrode) 101B, a first EL layer 120B, a second EL layer 121, and a second electrode 102. Organic EL device 110G has a first electrode (pixel electrode) 101G, a first EL layer 120G, a second EL layer (electron injection layer) 121, and a second electrode 102. Organic EL device 110R has a first electrode (pixel electrode) 101R, a first EL layer 120R, a second EL layer 121, and a second electrode (common electrode) 102. The second EL layer 121 and the second electrode 102 are provided in common to organic EL devices 110R, 110G, and 110B. The second EL layer 121 can also be called a common layer. In this embodiment, the first electrode 101 is the anode and the second electrode 102 is the cathode, as an example.

[0121] The first EL layer 120B of the organic EL device 110B has a luminescent organic compound that emits light having intensity in at least the blue wavelength range. The first EL layer 120G of the organic EL device 110G has a luminescent organic compound that emits light having intensity in at least the green wavelength range. The first EL layer 120R of the organic EL device 110R has a luminescent organic compound that emits light having intensity in at least the red wavelength range.

[0122] The first EL layer 120B, the first EL layer 120G, and the first EL layer 120R each have at least an emissive layer, and may also have one or more of the following: a hole blocking layer, an electron injection layer, an electron transport layer, a hole transport layer, a hole injection layer, an electron blocking layer, an exciton blocking layer, etc. The second EL layer 121 has a configuration that does not have an emissive layer. Preferably, the second EL layer 121 is an electron injection layer. Note that if the surface of the first EL layer 120B, the first EL layer 120G, and the first EL layer 120R on the second electrode side also serves as an electron injection layer, the second EL layer 121 may not be provided.

[0123] The first electrode (anode) 101B, the first electrode (anode) 101G, and the first electrode (anode) 101R are each provided for each organic EL device. Furthermore, it is preferable that the second electrode 102 and the second EL layer 121 are provided as a continuous layer common to each organic EL device.

[0124] A conductive film that is transparent to visible light is used on either the first electrode 101 or the second electrode 102, and a conductive film that is reflective is used on the other. By making the first electrode 101 transparent and the second electrode 102 reflective, a bottom-emission type display device can be made, and conversely, by making each first electrode reflective and the second electrode 102 transparent, a top-emission type display device can be made. Furthermore, by making both each first electrode and the second electrode 102 transparent, a dual-emission type display device can also be made. The organic EL device in this embodiment is suitable for a top-emission type organic EL device.

[0125] The ends of the first electrode 101B, the first electrode 101G, and the first electrode 101R are covered by the first EL layer 120B, the first EL layer 120G, and the first EL layer 120R, respectively. Furthermore, an insulating layer 125 is provided covering the ends of the first EL layer 120B, the first EL layer 120G, and the first EL layer 120R. In other words, the insulating layer 125 has openings that overlap with the first electrode 101B, the first electrode 101G, and the first electrode 101R and the first EL layer 120B, the first EL layer 120G, and the first EL layer 120R. The ends of the openings in the insulating layer 125 are preferably tapered. Furthermore, the ends of the first electrode 101B, the first electrode 101G, and the first electrode 101R do not necessarily have to be covered by the first EL layer 120B, the first EL layer 120G, and the first EL layer 120R, respectively.

[0126] The first EL layer 120B, the first EL layer 120G, and the first EL layer 120R each have a region that contacts the upper surface of the first electrode 101B, the first electrode 101G, and the first electrode 101R, respectively. The ends of the first EL layer 120B, the first EL layer 120G, and the first EL layer 120R are located below the insulating layer 125. The upper surfaces of the first EL layer 120B, the first EL layer 120G, and the first EL layer 120R each have a region that contacts the insulating layer 125 and a region that contacts the second EL layer 121 (or the second electrode 102 if the second EL layer is not provided).

[0127] Figure 5 is a modified version of Figure 4B. In Figure 5, the ends of the first electrode 101B, the first electrode 101G, and the first electrode 101R have a tapered shape that widens toward the substrate side, improving the coverage of the film formed on top. The ends of the first electrode 101B, the first electrode 101G, and the first electrode 101R are covered by the first EL layer 120B, the first EL layer 120G, and the first EL layer 120R, respectively. A mask layer 107 is formed covering the EL layer. This helps to suppress damage to the EL layer when etching by photolithography. An insulating layer 108 is provided between the organic EL devices 110B, 110G, and 110R. The edges of the insulating layer 108 have a gentle tapered shape, which helps to suppress the stepped breakage of the second EL layer 121 and the second electrode 102 that are formed thereafter.

[0128] As shown in Figures 4B and 5, a gap is provided between the two EL layers in organic EL devices of different colors. It is preferable that the first EL layer 120B, the first EL layer 120G, and the first EL layer 120R are arranged so that they do not touch each other. This effectively prevents current from flowing through two adjacent EL layers and causing unintended light emission. Therefore, contrast can be enhanced, and a display device with high display quality can be realized. Furthermore, the distance between the edges of opposing EL layers in adjacent organic EL devices (for example, organic EL device 110B and organic EL device 110G) can be made between 2 μm and 5 μm by fabrication using photolithography. This can also be rephrased as the distance between the light-emitting layers contained in the EL layer. It is difficult to achieve a distance of less than 10 μm using a metal mask formation method.

[0129] Thus, by fabricating a light-emitting device using photolithography, the area of ​​the non-light-emitting region that may exist between two organic EL devices can be significantly reduced, and the aperture ratio can be greatly increased. For example, in a display device according to one aspect of the present invention, the aperture ratio can be 40% or more, 50% or more, 60% or more, 70% or more, 80% or more, and even 90% or more, while still achieving less than 100%.

[0130] Furthermore, increasing the aperture ratio of a display device can improve its reliability. More specifically, using an organic EL device, if we use the lifespan of a display device with an aperture ratio of 10% as a baseline, the lifespan of a display device with an aperture ratio of 20% (i.e., twice the aperture ratio of the baseline) will be approximately 3.25 times longer, and the lifespan of a display device with an aperture ratio of 40% (i.e., four times the aperture ratio of the baseline) will be approximately 10.6 times longer. Thus, as the aperture ratio increases, the current density flowing through the organic EL device can be reduced, making it possible to improve the lifespan of the display device. In the display device described in this embodiment, it is possible to improve the display quality of the display device by increasing the aperture ratio. Moreover, as the aperture ratio of the display device increases, it has the excellent effect of significantly improving the reliability (especially the lifespan) of the display device.

[0131] Figure 4C shows an example where the EL layer 120R is formed to separate each organic EL device in the Y direction. Although Figure 4C shows a cross-section of organic EL device 110R as an example, the same shape can be used for organic EL devices 110G and 110B. The EL layer is continuous in the Y direction, and the EL layer 120R may be formed in a strip shape. By forming the EL layer 120R in a strip shape, the space required to separate them is eliminated, and the area of ​​the non-emitting region between organic EL devices can be reduced, thereby increasing the aperture ratio.

[0132] A barrier layer 131 is provided on the second electrode 102, covering the organic EL devices 110R, 110G, and 110B. The barrier layer 131 has the function of preventing impurities that could adversely affect each organic EL device from diffusing from above.

[0133] The barrier layer 131 can be, for example, a single-layer structure or a multilayer structure including at least an inorganic insulating film. Examples of inorganic insulating films include oxide films or nitride films such as silicon oxide film, silicon oxide nitride film, silicon oxide nitride film, silicon nitride film, aluminum oxide film, aluminum oxide nitride film, and hafnium oxide film. Alternatively, semiconductor materials such as indium gallium oxide and indium gallium zinc oxide may be used as the barrier layer 131.

[0134] Furthermore, a laminated film of an inorganic insulating film and an organic insulating film can also be used as the barrier layer 131. For example, it is preferable to have a configuration in which an organic insulating film is sandwiched between a pair of inorganic insulating films. It is also preferable that the organic insulating film functions as a planarizing film. This makes the upper surface of the organic insulating film flat, thereby improving the coverage of the inorganic insulating film on top of it and enhancing the barrier properties. In addition, since the upper surface of the barrier layer 131 is flat, it is preferable because it reduces the influence of uneven shapes caused by the structure below when a structure (e.g., a color filter, touch sensor electrodes, or lens array) is provided above the barrier layer 131.

[0135] Figure 4A also shows a connecting electrode 101C that is electrically connected to the second electrode 102. The connecting electrode 101C is supplied with a potential (e.g., anode potential or cathode potential) to the second electrode 102. The connecting electrode 101C is located outside the display area where the organic EL devices 110 and the like are arranged. Figure 4A also shows the second electrode 102 with a dashed line.

[0136] The connecting electrode 101C can be provided along the outer perimeter of the display area. For example, it may be provided along one side of the outer perimeter of the display area, or it may be provided across two or more sides of the outer perimeter of the display area. That is, if the top surface shape of the display area is rectangular, the top surface shape of the connecting electrode 101C can be a strip, L-shape, U-shape (angle bracket shape), or square, etc.

[0137] Figure 4D is a schematic cross-sectional view corresponding to the dashed line C1-C2 in Figure 4A. Figure 4D shows a connection portion 130 where the connecting electrode 101C and the second electrode 102 are electrically connected. In the connection portion 130, the second electrode 102 is provided in contact with the connecting electrode 101C, and a barrier layer 131 is provided covering the second electrode 102. In addition, an EL layer 121 is provided covering the end of the connecting electrode 101C.

[0138] Figures 6A to 7F are schematic cross-sectional diagrams of each step in the manufacturing method of the light-emitting device 450 described above. These also show schematic cross-sectional diagrams of the connection portion 130 and its vicinity on the right side.

[0139] The thin films (insulating films, semiconductor films, conductive films, etc.) that make up the display device can be formed using sputtering, chemical vapor deposition (CVD), vacuum deposition, pulsed laser deposition (PLD), atomic layer deposition (ALD), and other methods. CVD methods include plasma-enhanced CVD (PECVD) and thermal CVD. One type of thermal CVD is metal-organic CVD (MOCVD).

[0140] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed by methods such as spin coating, dip coating, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, and knife coating.

[0141] Furthermore, when processing the thin films that make up the display device, photolithography or the like can be used.

[0142] There are two main methods of photolithography. One method involves forming a resist mask on the thin film to be processed, then processing the thin film by etching or other means, and removing the resist mask. The other method involves forming a photosensitive thin film, then exposing and developing it to process the thin film into the desired shape.

[0143] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture thereof. Other options include ultraviolet light, KrF laser light, or ArF laser light. Exposure may also be performed using immersion lithography. Furthermore, extreme ultraviolet (EUV) light, X-rays, etc., may be used as the light for exposure. An electron beam can also be used instead of light for exposure. Using extreme ultraviolet light, X-rays, or an electron beam is preferable because it allows for extremely fine processing. Note that a photomask is not required when exposure is performed by scanning a beam such as an electron beam.

[0144] For etching thin films, methods such as dry etching, wet etching, and sandblasting can be used.

[0145] In this specification, devices fabricated using a metal mask or FMM (Fine Metal Mask, a high-resolution metal mask) may be referred to as MM (Metal Mask) structured devices. In addition, in this specification, devices fabricated without using a metal mask or FMM may be referred to as MML (Metal Maskless) structured devices.

[0146] [Preparation of circuit board 100] As the substrate 100, a substrate having at least sufficient heat resistance to withstand subsequent heat treatment can be used. When an insulating substrate is used as the substrate 100, glass substrates, quartz substrates, sapphire substrates, ceramic substrates, organic resin substrates, etc., can be used. In addition, semiconductor substrates such as single-crystal semiconductor substrates made of silicon, silicon carbide, etc., polycrystalline semiconductor substrates, compound semiconductor substrates such as silicon germanium, and SOI substrates can be used.

[0147] In particular, it is preferable to use a substrate 100 on which a semiconductor circuit including semiconductor elements such as transistors is formed on the semiconductor substrate or insulating substrate. It is preferable that the semiconductor circuit constitutes, for example, a pixel circuit, a gate line driving circuit (gate driver), a source line driving circuit (source driver), etc. In addition to the above, an arithmetic circuit, a memory circuit, etc. may also be configured.

[0148] [Formation of the first electrodes 101B, 101G, 101R and the connecting electrode 101C] Next, the first electrode 101B, the first electrode 101G, the first electrode 101R, and the connecting electrode 101C are formed on the substrate 100. First, a conductive film to be used as the pixel electrode (first electrode) is deposited, a resist mask is formed by photolithography, and unnecessary parts of the conductive film are removed by etching. After that, the resist mask is removed to form the first electrode 101B, the first electrode 101G, and the first electrode 101R.

[0149] When using a conductive film that is reflective to visible light as each pixel electrode, it is preferable to use a material (for example, silver or aluminum) that has the highest possible reflectivity across the entire wavelength range of visible light. This not only improves the light extraction efficiency of the organic EL device but also enhances color reproduction. When a conductive film that is reflective to visible light is used as each pixel electrode, it is possible to create a so-called top-emission light-emitting device that extracts light in the direction opposite to the substrate. When a transparent conductive film is used as each pixel electrode, it is possible to create a so-called bottom-emission light-emitting device that extracts light in the direction of the substrate.

[0150] [Formation of EL film 120Bb] Next, an EL film 120Bb, which will later become the EL layer 120B, is deposited on the first electrode 101B, the first electrode 101G, and the first electrode 101R.

[0151] The EL film 120Bb has an emissive layer containing at least a light-emitting material. In addition, it may have a structure in which one or more films functioning as electron injection layers, electron transport layers, charge generation layers, hole transport layers, or hole injection layers are laminated. The EL film 120Bb can be formed by, for example, vapor deposition, sputtering, or inkjet. However, it is not limited to these methods, and known film formation methods can be used as appropriate.

[0152] As an example, it is preferable that the EL film 120Bb be a laminated film in which a hole injection layer, a hole transport layer, an emissive layer, and an electron transport layer are stacked in this order. In this case, the EL layer 121 to be formed later can be a film having an electron injection layer.

[0153] It is preferable to form the EL film 120Bb so as not to be present on the connecting electrode 101C. For example, when forming the EL film 120Bb by vapor deposition (or sputtering), it is preferable to form it using a shielding mask or to remove it in a later etching step so that the EL film 120Bb is not deposited on the connecting electrode 101C.

[0154] [Formation of protective film 148a] Next, a protective film 148a is formed by covering the EL film 120Bb. It is preferable to form the protective film 148a using a shielding mask or to remove it in a later etching step so that it is not formed on the connecting electrode 101C.

[0155] The protective film 148a is formed using an organometallic compound represented by general formula (G1) or general formula (G2) as described in Embodiment 1. This organometallic compound is highly suitable as a material for the protective film 148a in order to protect the EL film 120Bb and improve its heat resistance. By using this organometallic compound as the material for the protective film 148a, the heat resistance of the EL film 120Bb is improved, and the deposition temperature of the mask film 144a that is formed thereafter can be increased. This improves the barrier properties and in-plane uniformity of the mask film, making it possible to obtain an organic EL device with good characteristics, or to enable stable manufacturing.

[0156] [Formation of mask film 144a] Next, a mask film 144a is formed by covering the EL film 120Bb and the protective film 148a. It is preferable to form the mask film 144a using a shielding mask or to remove it in a later etching step so that it is not formed on the connecting electrode 101C.

[0157] The mask film 144a can be a film with high resistance to etching treatment of each EL film, such as the EL film 120Bb, i.e., a film with a high etching selectivity ratio. Alternatively, the mask film 144a can be a film with a high etching selectivity ratio with protective films, such as the metal film or metal compound film 146a described later. Furthermore, it is preferable that the mask film 144a be a film that can be removed by a wet etching method that causes minimal damage to each EL film.

[0158] The mask film 144a can be formed by various film deposition methods such as sputtering, vapor deposition, CVD, and ALD, but the ALD method is preferred because it can produce a dense film with high barrier properties against atmospheric components such as oxygen and water, and liquids such as water.

[0159] Furthermore, the presence of a protective film 148a on the EL film 120Bb improves the heat resistance of the EL film 120Bb. As a result, the temperature during film formation of the mask film 144a can be increased, and a mask film 144a with better film quality can be formed than in a configuration without the protective film 148a.

[0160] This improves the barrier properties of the mask film 144a, further reducing the damage that subsequent processes inflict on the EL film 120Bb. It also reduces in-plane variation of the mask film 144a, minimizing differences in etching rates within the mask film 144a, thereby suppressing damage to the EL film 120Bb during removal of the mask film 144a, or preventing residual mask film 144a. Furthermore, it widens the process margin and stabilizes the process.

[0161] [Formation of a metal film or metal compound film 146a] Next, a metal film or metal compound film 146a is formed on the mask film 144a (Figure 6B).

[0162] The metal film or metal compound film 146a is used as a hard mask when etching the mask film 144a later. Furthermore, the mask film 144a is exposed during the subsequent processing of the metal film or metal compound film 146a. Therefore, a combination of films with a high etching selectivity ratio between the mask film 144a and the metal film or metal compound film 146a is selected. Thus, depending on the etching conditions of the mask film 144a and the metal film or metal compound film 146a, the film that can be used for the metal film or metal compound film 146a can be selected.

[0163] For example, when dry etching using a fluorine-containing gas (also called a fluorine-based gas) is used to etch a metal film or metal compound film 146a, silicon, silicon nitride, silicon oxide, tungsten, titanium, molybdenum, tantalum, tantalum nitride, an alloy containing molybdenum and niobium, or an alloy containing molybdenum and tungsten can be used for the metal film or metal compound film 146a. Here, metal oxide films are examples of films that can achieve a high selectivity ratio for etching (i.e., a slower etching rate) compared to dry etching using the above-mentioned fluorine-based gas.

[0164] As metal oxides, metal oxides such as indium gallium zinc oxide (In-Ga-Zn oxide, also written as IGZO) can be used. Furthermore, indium oxide, indium zinc oxide (In-Zn oxide), indium tin oxide (In-Sn oxide), indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), etc. can be used. Alternatively, indium tin oxide containing silicon can also be used.

[0165] Furthermore, the above-mentioned method can also be applied when element M (where M is one or more selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium) is used instead of gallium. In particular, it is preferable that M be one or more selected from gallium, aluminum, or yttrium.

[0166] However, the metal film or metal compound film 146a can be selected from a variety of materials depending on the etching conditions of the mask film 144a and the etching conditions of the metal film or metal compound film 146a. For example, it can be selected from films that can be used for the mask film 144a.

[0167] Furthermore, as the metal film or metal compound film 146a, for example, a nitride film can be used. Specifically, nitrides such as silicon nitride, aluminum nitride, hafnium nitride, titanium nitride, tantalum nitride, tungsten nitride, gallium nitride, and germanium nitride can also be used.

[0168] Alternatively, an oxide film can be used as the metal film or metal compound film 146a. Typically, oxide films or oxynitride films such as silicon oxide, silicon oxynitride, aluminum oxynitride, hafnium oxide, and hafnium oxynitride can also be used.

[0169] Furthermore, an organic film that can be used for EL film 120Bb, etc., may be used as the metal film or metal compound film 146a. For example, the same organic film used for EL film 120Bb, EL film 120Gb, or EL film 120Rb can be used for the metal film or metal compound film 146a. Using such an organic film is preferable because it allows the same film deposition equipment to be used for both EL film 120Bb, etc.

[0170] [Formation of resist mask 143a] Next, a resist mask 143a is formed on the metal film or metal compound film 146a at a position overlapping with the first electrode 101B and at a position overlapping with the connecting electrode 101C, respectively (Figure 6C).

[0171] The resist mask 143a can use a resist material containing a photosensitive resin, such as a positive-type resist material or a negative-type resist material.

[0172] In this case, if a resist mask 143a is formed on the mask film 144a without a metal film or metal compound film 146a, there is a risk that the EL film 120Bb may dissolve due to the solvent of the resist material if defects such as pinholes exist in the mask film 144a. Using a metal film or metal compound film 146a can prevent such problems from occurring.

[0173] Furthermore, if a film less prone to defects such as pinholes is used for the mask film 144a, the resist mask 143a may be formed directly on the mask film 144a without using a metal film or metal compound film 146a.

[0174] [Etching of metal film or metal compound film 146a] Next, the portion of the metal film or metal compound film 146a not covered by the resist mask 143a is removed by etching to form a strip-shaped or island-shaped metal layer or metal compound layer 147a. At the same time, a metal layer or metal compound layer 147a is also formed on the connecting electrode 101C.

[0175] When etching the metal film or metal compound film 146a, it is preferable to use etching conditions with a high selectivity ratio so that the mask film 144a is not removed by the etching. The metal film or metal compound film 146a can be etched by wet etching or dry etching, but by using dry etching, it is possible to suppress the reduction of the pattern of the metal film or metal compound film 146a.

[0176] [Removal of resist mask 143a] Next, remove the resist mask 143a (Figure 6D).

[0177] The resist mask 143a can be removed by wet etching or dry etching. In particular, it is preferable to remove the resist mask 143a by dry etching (also called plasma ashing) using oxygen gas as the etching gas.

[0178] In this case, the removal of the resist mask 143a is performed while the EL film 120Bb is covered by the mask film 144a, thus suppressing the impact on the EL film 120Bb. In particular, since contact with oxygen can adversely affect the electrical properties of the EL film 120Bb, it is preferable to have the mask film 144a when performing etching using oxygen gas, such as plasma ashing.

[0179] [Etching of mask film 144a] Next, using the metal layer or metal compound layer 147a as a mask, the portion of the mask film 144a not covered by the metal layer or metal compound layer 147a is removed by etching to form a strip-shaped mask layer 145a (Figure 6E). At the same time, a mask layer 145a is also formed on the connecting electrode 101C.

[0180] The mask film 144a can be etched by wet etching or dry etching, but dry etching is preferred because it can suppress pattern reduction.

[0181] [Etching of EL film 120Bb, metal layer or metal compound layer 147a] Next, the metal layer or metal compound layer 147a is etched, and at the same time, a portion of the EL film 120Bb and protective film 148a that are not covered by the mask layer 145a are removed by etching, forming a strip-shaped EL layer 120B and protective layer 149a (Figure 6F). At the same time, the metal layer or metal compound layer 147a on the connecting electrode 101C is also removed.

[0182] Etching the EL film 120Bb and the protective film 148a with the metal layer or metal compound layer 147a using the same process simplifies the process and reduces the manufacturing cost of the display device, which is therefore preferable.

[0183] In particular, for etching the EL film 120Bb, it is preferable to use dry etching with an etching gas that does not contain oxygen as its main component. This suppresses the deterioration of the EL film 120Bb and enables the realization of a highly reliable display device. Examples of etching gases that do not contain oxygen as their main component include noble gases such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, H2, or He. Alternatively, a mixed gas of the above gases and an oxygen-free diluent gas can be used as the etching gas.

[0184] The etching of the EL film 120Bb and the protective film 148a may be performed separately from the etching of the metal layer or metal compound layer 147a. In this case, the EL film 120Bb and the protective film 148a may be etched first, or the metal layer or metal compound layer 147a may be etched first.

[0185] At this point, the EL layer 120B, the protective layer 149a, and the connecting electrode 101C are covered by the mask layer 145a.

[0186] [Formation of EL layer 120G and EL layer 120R] By repeating the same process, island-shaped EL layers 120G and 120R, island-shaped protective layers 149b and 149c, and island-shaped mask layers 145b and 145c can be formed (Figure 7A).

[0187] [Formation of insulating layer 126b] Next, an insulating layer 126b is formed on the mask layer 145a, mask layer 145b, and mask layer 145c (Figure 7B). The insulating layer 126b can be manufactured in the same manner as the mask layer 145a, mask layer 145b, and mask layer 145c.

[0188] [Formation of insulating film 125b] Subsequently, insulating layer 125b is formed by covering insulating layer 126b (Figure 7C). Insulating layer 125b may be formed using a photosensitive organic resin. Examples of such organic materials include acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimidoamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins. In addition, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used as insulating layer 125b. Furthermore, photoresist may be used as the photosensitive resin. The photosensitive resin may be a positive-type material or a negative-type material.

[0189] It is preferable to heat-treat the insulating layer 125b after coating. This heat treatment should be performed at a temperature lower than the heat resistance temperature of the EL layer. The substrate temperature during the heat treatment should be 50°C to 200°C, preferably 60°C to 150°C, and more preferably 70°C to 120°C. This allows for the removal of solvent contained in the insulating layer 125b.

[0190] Next, exposure and development are performed to form an opening in the region of the insulating layer 125b that overlaps with the first electrode and the first EL layer, thereby forming the insulating layer 125 (Figure 7D). If a positive-type acrylic resin is used for the insulating layer 125b, visible light or ultraviolet light can be irradiated using a mask in the region where the insulating layer 125b is to be removed.

[0191] Furthermore, when using visible light for exposure, it is preferable that the visible light includes the i-line (wavelength 365 nm). In addition, visible light including the g-line (wavelength 436 nm) or the h-line (wavelength 405 nm) may also be used.

[0192] When developing the film using acrylic resin for the insulating layer 125b, it is preferable to use an alkaline solution as the developer, for example, an aqueous solution of tetramethylammonium hydroxide (TMAH).

[0193] Furthermore, it is preferable to expose the entire substrate afterward, irradiating the insulating layer 125 with visible light or ultraviolet light. The energy density of this exposure is 0 mJ / cm². 2 Even larger, 800 mJ / cm 2 The following is sufficient: 0 mJ / cm 2 Larger, 500 mJ / cm 2 The following is preferable: Performing such exposure after development may improve the transparency of the insulating layer 125. In addition, it may be possible to lower the substrate temperature required for the heat treatment in a later process to deform the edges of the insulating layer 125 into a tapered shape.

[0194] Next, by heat treatment, the insulating layer 125b can be deformed into an insulating layer 125 having a tapered shape on its side surface. This heat treatment is performed at a temperature lower than the heat resistance temperature of the EL layer. The substrate temperature during the heat treatment should be 50°C to 200°C, preferably 60°C to 150°C, and more preferably 70°C to 130°C. It is preferable to use a higher substrate temperature for this step than for the heat treatment after coating the insulating layer 125. This also improves the corrosion resistance of the insulating layer 125.

[0195] [Removal of mask layer 145] Next, the exposed mask layers 145a, 145b, and 145c are removed by wet etching or dry etching. At this time, it is not necessary to completely remove the mask layers 145a, 145b, and 145c because of the presence of the protective layer 149, and the EL layer is hardly damaged by the mask layer 145 removal process.

[0196] In this case, it is particularly preferable to use a wet etching method. For example, it is preferable to use wet etching with an aqueous solution of tetramethylammonium hydroxide (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof.

[0197] Alternatively, it is preferable to remove the mask layers 145a, 145b, and 145c by dissolving them in a solvent such as water or alcohol. Here, various alcohols can be used to dissolve the mask layers 145a, 145b, and 145c, such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0198] Furthermore, if the mask layer 145 is deposited by the ALD method at a temperature of 100°C or higher, the variation in film quality within the plane is small, allowing the mask layer 145 to be removed without excessive over-etching, thereby suppressing damage to the EL layer. Alternatively, because the variation in film quality within the plane is small, residue of the mask layer 145 due to insufficient etching is less likely to remain, preventing the subsequent high-voltage manufacturing of semiconductor devices. It is also acceptable to process the mask layer 145 so that a small amount remains on the protective layer 149. In this case, it can be removed together with the protective layer 149 in the subsequent removal process.

[0199] [Removal of protective layer 149] Next, protective layers 149a, 149b, and 149c are removed together with water or a water-based solvent (Figure 7E).

[0200] Removal using water or a water-based solvent is performed by immersion in water or a water-based solvent. After this, rinsing with a shower of pure water may be performed. This process can remove the aluminum oxide layer along with the mask layer.

[0201] After removing the mask layer 145a, mask layer 145b, mask layer 145c, protective layer 149a, protective layer 149b, and protective layer 149c, it is preferable to perform a drying treatment to remove water contained inside the EL layer 120B, EL layer 120G, and EL layer 120R, as well as water adsorbed on the surface. For example, it is preferable to perform a heat treatment under an inert gas atmosphere or a reduced pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50°C to 200°C, preferably 60°C to 150°C, and more preferably 70°C to 120°C. A reduced pressure atmosphere is preferable because it allows drying at a lower temperature.

[0202] In this way, EL layer 120B, EL layer 120G, and EL layer 120R can be manufactured separately.

[0203] [Formation of EL layer 121] Next, the EL layer 121 is formed over the EL layer 120B, EL layer 120G, EL layer 120R, and insulating layer 125.

[0204] The EL layer 121 can be deposited using the same method as the EL film 120Bb. When depositing the EL layer 121 by vapor deposition, it is preferable to use a shielding mask to prevent the EL layer 121 from being deposited on the connecting electrode 101C.

[0205] [Formation of the second electrode 102] Next, the EL layer 121 and the connecting electrode 101C are covered to form the second electrode 102 (Figure 7F).

[0206] The second electrode 102 can be formed by a film deposition method such as vapor deposition or sputtering. Alternatively, a film formed by vapor deposition and a film formed by sputtering may be laminated together. In this case, it is preferable to form the second electrode 102 so as to encompass the region in which the electron injection layer 115 is formed. That is, the edge of the electron injection layer 115 can overlap with the second electrode 102. It is preferable to form the second electrode 102 using a shielding mask.

[0207] The second electrode 102 is electrically connected to the connecting electrode 101C outside the display area.

[0208] [Formation of a barrier layer] Next, a barrier layer is formed on the second electrode 102. For depositing the inorganic insulating film used as the protective layer, sputtering, PECVD, or ALD methods are preferred. The ALD method is particularly preferred because it offers excellent step coverage and is less prone to defects such as pinholes. Furthermore, for depositing the organic insulating film, the inkjet method is preferred because it can form a uniform film in the desired area.

[0209] Based on the above, a light-emitting device can be manufactured.

[0210] In the above example, the case where the second electrode 102 and the second EL layer 121 are formed with different upper surface shapes is shown, but they may also be formed in the same region.

[0211] The configuration of this embodiment can be used in appropriate combination with other configurations.

[0212] (Embodiment 4) In this embodiment, the configuration of an organic EL device, which is an organic semiconductor device having an EL layer as an organic semiconductor layer, will be described with reference to Figure 8. The organic EL device is an organic semiconductor device that includes a configuration comprising an EL layer having a light-emitting layer between a first electrode 101 and a second electrode 102.

[0213] The first electrode 101 and the second electrode 102 function as either an anode or a cathode. Figure 8 illustrates the case where the first electrode 101 is the anode.

[0214] The anode is preferably formed using a metal, alloy, conductive compound, or mixture thereof with a high work function (specifically, 4.0 eV or higher). Specifically, examples include indium tin oxide (ITO), indium tin oxide containing silicon or silicon oxide, indium zinc oxide, and indium oxide (IWZO) containing tungsten oxide and zinc oxide. These conductive metal oxide films are usually deposited by sputtering, but they may also be fabricated using methods such as the sol-gel method. As an example of a fabrication method, indium zinc oxide can be formed by sputtering using a target containing 1 to 20 wt% zinc oxide relative to indium oxide. Indium oxide (IWZO) containing tungsten oxide and zinc oxide can also be formed by sputtering using a target containing 0.5 to 5 wt% tungsten oxide and 0.1 to 1 wt% zinc oxide relative to indium oxide. Other materials that can be used for the anode include, for example, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), or nitrides of metallic materials (e.g., titanium nitride). Alternatively, graphene can also be used as the anode material. Furthermore, by using the composite material described later in the layer in contact with the anode in the EL layer 103, the electrode material can be selected regardless of the work function.

[0215] The EL layer 103 preferably has a multilayer structure, but there are no particular limitations on the multilayer structure, and various layer structures such as hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, carrier block layer (hole block layer, electron block layer), exciton block layer, and charge generation layer can be applied. Note that any of the layers may not be provided. In this embodiment, as shown in Figure 8, a configuration having a hole injection layer 111, a hole transport layer 112, a light-emitting layer 113, an electron transport layer 114, and an electron injection layer 115 is specifically described below.

[0216] The hole injection layer 111 is a layer containing an acceptor substance. Both organic and inorganic compounds can be used as the acceptor substance.

[0217] Examples of substances with acceptor properties include compounds having electron-withdrawing groups (halogen groups, cyano groups), such as 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviated as F4-TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviated as HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviated as F6-TCNNQ), and 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyrene-2-ylidene)malononitrile. In particular, compounds in which an electron-withdrawing group is bonded to a condensed aromatic ring having multiple heteroatoms, such as HAT-CN, are thermally stable and preferred. Furthermore, radialene derivatives having an electron-withdrawing group (especially halogen groups such as fluoro groups, or cyano groups) [3] are preferred because they have very high electron-accepting properties. Specific examples include α,α',α''-1,2,3-cyclopropanetriylidenates[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α',α''-1,2,3-cyclopropanetriylidenates[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], and α,α',α''-1,2,3-cyclopropanetriylidenates[2,3,4,5,6-pentafluorobenzeneacetonitrile]. In addition to the organic compounds mentioned above, other substances with acceptor properties that can be used include molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, etc. Furthermore, the hole injection layer 111 can also be formed by phthalocyanine-based complex compounds such as phthalocyanine (abbreviated as H2Pc) and copper phthalocyanine (CuPc), aromatic amine compounds such as 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviated as DPAB) and N,N'-bis{4-[bis(3-methylphenyl)amino]phenyl}-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (abbreviated as DNTPD), or polymers such as poly(3,4-ethylenedioxythiophene) / poly(styrene sulfonic acid) (PEDOT / PSS).Acceptor materials can extract electrons from adjacent hole transport layers (or hole transport materials) by applying an electric field.

[0218] Furthermore, among substances with acceptor properties, organic compounds with acceptor properties are easy to use because they are readily deposited and easy to form films.

[0219] Furthermore, a composite material containing the above-mentioned acceptor substance in a hole-transporting material can also be used as the hole injection layer 111. By using a composite material containing the acceptor substance in a hole-transporting material, it is possible to select the material for forming the electrode regardless of the work function. In other words, not only materials with a large work function but also materials with a small work function can be used as the anode.

[0220] Various organic compounds can be used as hole-transporting materials in composite materials, including aromatic amine compounds, carbazole derivatives, aromatic hydrocarbons, and polymer compounds (oligomers, dendrimers, polymers, etc.). -6 cm 2 It is preferable that the material has a hole mobility of / Vs or higher. Below, we specifically list organic compounds that can be used as hole transporting materials in composite materials.

[0221] Aromatic amine compounds that can be used in composite materials include N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviated as DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviated as DPAB), N,N'-bis{4-[bis(3-methylphenyl)amino]phenyl}-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (abbreviated as DNTPD), and 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviated as DPA3B). Specifically, carbazole derivatives include 3-[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviated as PCzPCA1), 3,6-bis[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviated as PCzPCA2), and 3-[N-(1-naphthyl)-N-(9-phenylcarbazole-3-yl)amino]-9-phenylcarbazole Lubazole (abbreviated as PCzPCN1), 4,4'-di(N-carbazolyl)biphenyl (abbreviated as CBP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviated as TCPB), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviated as CzPA), 1,4-bis[4-(N-carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene, etc. can be used.Examples of aromatic hydrocarbons include 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 2-tert-butyl-9,10-di(1-naphthyl)anthracene, 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAnth), 9,10-bis(4-methyl-1-naphthyl)anthracene (abbreviation: DMNA), 2-tert- Examples include butyl-9,10-bis[2-(1-naphthyl)phenyl]anthracene, 9,10-bis[2-(1-naphthyl)phenyl]anthracene, 2,3,6,7-tetramethyl-9,10-di(1-naphthyl)anthracene, 2,3,6,7-tetramethyl-9,10-di(2-naphthyl)anthracene, 9,9'-bianthryl, 10,10'-diphenyl-9,9'-bianthryl, 10,10'-bis(2-phenylphenyl)-9,9'-bianthryl, 10,10'-bis[(2,3,4,5,6-pentaphenyl)phenyl]-9,9'-bianthryl, anthracene, tetracene, rubrene, perylene, and 2,5,8,11-tetra(tert-butyl)perylene. In addition, pentacene, coronene, and the like can also be used. Furthermore, the compound may have a vinyl skeleton. Examples of aromatic hydrocarbons having a vinyl group include 4,4'-bis(2,2-diphenylvinyl)biphenyl (abbreviated as DPVBi) and 9,10-bis[4-(2,2-diphenylvinyl)phenyl]anthracene (abbreviated as DPVPA). Organic compounds according to one embodiment of the present invention can also be used.

[0222] In addition, polymer compounds such as poly(N-vinylcarbazole) (abbreviated as PVK), poly(4-vinyltriphenylamine) (abbreviated as PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviated as PTPDMA), and poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviated as Poly-TPD) can also be used.

[0223] The hole-transporting material used in the composite material more preferably has one of the following skeletons: carbazole, dibenzofuran, dibenzothiophene, or anthracene. In particular, it may be an aromatic amine having substituents including a dibenzofuran ring or a dibenzothiophene ring, an aromatic monoamine having a naphthalene ring, or an aromatic monoamine in which a 9-fluorenyl group is bonded to the nitrogen of the amine via an arylene group. Furthermore, it is preferable that these organic compounds are substances having an N,N-bis(4-biphenyl)amino group, as this allows for the fabrication of organic EL devices with a good lifespan. Specifically, the organic compounds described above include N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), and 4,4'-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine). N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-6-amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-6-amine (abbreviation: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-6-amine (abbreviation: BBABnf(61,2-d]furan-8-amine (abbreviation: BBAB Lan-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophen-4-yl)phenyl]-N-phenyl-4-biphenylamine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4',4''-diphenyltriphenylamine (abbreviation :BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4'-diphenyl-4''-(6;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl-4''-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB-03), 4,4'-Diphenyl-4''-(7-phenyl)naphthyl-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-Diphenyl-4''-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B), 4,4'-Diphenyl-4''-(7;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-Diphenyl-4''-(4;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB), 4,4'-Diphenyl-4''-(5;2'- Binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenylyl)-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: TPBiAβNBi), 4-phenyl-4'-(1-naphthyl)triphenyl Luamine (abbreviation: αNBA1BP), 4,4'-bis(1-naphthyl)triphenylamine (abbreviation: αNBB1BP), 4,4'-diphenyl-4''-[4'-(carbazole-9-yl)biphenyl-4-yl]triphenylamine (abbreviation: YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazole-9-yl)phenyl]tris(1,1'-biphenyl-4-yl)amine (abbreviation: YGTBi1BP-02), 4-diphenyl-4'-(2-naphthyl)-4''-{9-(4-biphenylyl)carbazole}triphenylamine N (abbreviation: YGTBiβNB), N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirobio[9H-fluorene]-2-amine (abbreviation: PCBNBSF), N,N-bis(4-biphenylyl)-9,9'-spirobio[9H-fluorene]-2-amine (abbreviation: BBASF), N,N-bis(1,1'-biphenyl-4-yl)-9,9'-spirobio[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(1,1'-biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi[9H-fluoren]-4-amine (abbreviation: oFBiSF), N-(4-biphenyl)-N-(dibenzofuran-4-yl)-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4 -phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'-[4-(9-phenylfluoren-9-yl)phenyl]triphenylamine (abbreviation: BPAFLBi), 4-phenyl-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H -Carbazole-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBNBB), N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]spiro-9,9'-bifluoren-2-amine (abbreviation: PCBASF), N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine Examples include (abbreviation: PCBBiF), N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobio-9H-fluoren-4-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobio-9H-fluoren-3-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobio-9H-fluoren-2-amine, and N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobio-9H-fluoren-1-amine.

[0224] Furthermore, it is even more preferable that the hole-transporting material used in the composite material has a relatively deep HOMO level between -5.7 eV and -5.4 eV. Having a relatively deep HOMO level in the hole-transporting material used in the composite material facilitates the injection of holes into the hole transport layer 112 and makes it easier to obtain an organic EL device with a good lifespan. In addition, having a relatively deep HOMO level in the hole-transporting material used in the composite material moderately suppresses hole induction, resulting in an organic EL device with an even better lifespan.

[0225] Furthermore, by mixing alkali metal or alkaline earth metal fluoride into the above composite material (preferably with an atomic ratio of fluorine atoms of 20% or more in the layer), the refractive index of the layer can be reduced. This also makes it possible to form a layer with a low refractive index inside the EL layer 103, thereby improving the external quantum efficiency of the organic EL device.

[0226] By forming the hole injection layer 111, the hole injection performance is improved, making it possible to obtain an organic EL device with a low driving voltage.

[0227] The hole transport layer 112 is formed by including a material having hole transport properties. The material having hole transport properties is 1 × 10 -6 cm 2 It is preferable that the hole mobility is greater than or equal to / Vs.

[0228] Materials having the above hole transport properties include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviated as NPB), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (abbreviated as TPD), 4,4'-bis[N-(spiro-9,9'-bifluoren-2-yl)-N-phenylamino]biphenyl (abbreviated as BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviated as BPAFLP), and 4-phenyl-3'-(9- Phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine Compounds having an aromatic amine skeleton such as bazole-3-yl)triphenylamine (abbreviation: PCBNBB), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]spiro-9,9'-bifluoren-2-amine (abbreviation: PCBASF), 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl)biphenyl Lu (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 9,9'-bis(biphenyl-4-yl)-3,3'-bi-9H-carbazole (abbreviation: BisBPCz), 9,9'-bis(1,1'-biphenyl-3-yl)-3,3'-bi-9H-carbazole (abbreviation: BismBPCz), 9-(1,1'-biphenyl-3-yl)-9'-(1,1'-biphenyl-4-yl)-9H,9'H-3,3'-bicarbazole (abbreviation: mBPCCBP), 9-(2-naphthyl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: βNCCP), 9-(3-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCmBP), 9-(4-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCBP), 9,9'-di-2-naphthyl-3,3'-9H,9'H-bicarbazole (abbreviation: BisβNCz), 9-(2-naphthyl)-9'-[1,1':4',1”- [Terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1”-terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1”-terphenyl]-5'-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':4',1”-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1”-terphenyl]-4-yl- 3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-(triphenylene-2-yl)-3,3'-9H,9'H-bicarbazole, 9-phenyl-9'-(triphenylene-2-yl)-3,3'-bi-9H-carbazole (abbreviation: PCCzTp), 9,9'-bis(triphenylene-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(4-biphenyl)-9'-(triphenylene-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(triphenylene-2-yl)-9'-[1,1':3',1”-tafer Compounds having a carbazole skeleton such as [nyl]-4-yl-3,3'-9H,9'H-bicarbazole, compounds having a thiophene skeleton such as 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), 4,Examples of compounds having a furan skeleton include 4',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviated as DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviated as mmDBFFLBi-II). Among those mentioned above, compounds having an aromatic amine skeleton and compounds having a carbazole skeleton are preferred because they have good reliability, high hole transport properties, and contribute to reducing the driving voltage. Furthermore, the materials listed as having hole transport properties used in the composite material of the hole injection layer 111 can also be suitably used as materials constituting the hole transport layer 112.

[0229] The light-emitting layer 113 preferably contains a light-emitting substance and a first organic compound. It may also contain a second organic compound. The light-emitting layer 113 may also contain other materials. It may also be a laminate of two layers with different compositions. The first organic compound is preferably an organic compound having electron transport properties, and the second organic compound is preferably an organic compound having hole transport properties.

[0230] Furthermore, the light-emitting material may be a fluorescent material, a phosphorescent material, or a material that exhibits thermally activated delayed fluorescence (TADF).

[0231] Examples of materials that can be used as fluorescent materials in the light-emitting layer 113 include the following. Other fluorescent materials can also be used.

[0232] 5,6-Bis[4-(10-phenyl-9-antryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-Bis[4'-(10-phenyl-9-antryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-Diphenyl-N,N'-Bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyren-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-Bis(3-methylphenyl)-N,N'-Bis[3-(9-phenyl-9H-fluoren-9-yl )phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-bis[4-(9H-carbazole-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazole-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazole-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4-( 10-phenyl-9-anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBAPA), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis[N,N',N'-triphenyl-1,4-phenylenediamine] (abbreviation: DPABPA), N,9 -Diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: 2PCAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), N,N,N',N',N'',N'',N''',N'''-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), coumarin 30, N-(9,10-diphenyl-2-anthryl)-N,9-Diphenyl-9H-carbazole-3-amine (abbreviation: 2PCAPA), N-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPA BPhA), 9,10-bis(1,1'-biphenyl-2-yl)-N-[4-(9H-carbazole-9-yl)phenyl]-N-phenylanthracene-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenylanthracene-9-amine (abbreviation: DPhAPhA), coumarin 545T, N,N'-diphenylquinacridone (abbreviation: DPQd), rubren, 5,12-bis(1,1'-biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6 -methyl-4H-pyran-4-ylidene)propanedinitrile (abbreviation: DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoridine-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluorantene-3,10-di Amine (abbreviation: p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoridine-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoridine-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB), 2-(2,6-Bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-Bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoridine-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: BisDCJTM), N,N'-diphenyl-N,N'-(1,6-pyrene-diyl)bis[(6-phenylbenzo[b Examples include ]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), 3,10-bis[N-(9-phenyl-9H-carbazole-2-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10PCA2Nbf(IV)-02), and 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02). In particular, condensed aromatic diamine compounds, such as pyrenediamine compounds like 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03, are preferred because they have high hole-trapping properties and excellent luminescence efficiency and reliability.

[0233] When a phosphorescent material is used as the light-emitting material in the light-emitting layer 113, the following are some examples of materials that can be used.

[0234] Organometallic iridium complexes having a pyrimidine skeleton such as (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm)2(dpm)]), bis[4,6-di(naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]), organometallic iridium complexes having a pyrazine skeleton such as (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr)2(acac)]), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr)2(dpm)]), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]), tris(1-phenylisoquinolinato-N,C 2’ )iridium(III) (abbreviation: [Ir(piq)3]), bis(1-phenylisoquinolinato-N,C 2’) Iridium(III) acetylacetonate (abbreviation: [Ir(piq)2(acac)]), (3,7-diethyl-4,6-nonanedionato-κO4,κO6)bis[2,4-dimethyl-6-[7-(1-methylethyl)-1-isoquinolinyl-κN]phenyl-κC]iridium(III), (3,7-diethyl-4,6-nonanedionato-κO4,κO6)bis[2,4-dimethyl-6-[5-(1-methylethyl)-2-quinolinyl-κN]phenyl-κC]iridium(III) are organometallic iridium compounds with a pyridine skeleton. In addition to dinium complexes, other examples include platinum complexes such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (abbreviated as PtOEP), and rare earth metal complexes such as tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviated as [Eu(DBM)3(Phen)]) and tris[1-(2-tenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviated as [Eu(TTA)3(Phen)]). These exhibit emission peaks in the wavelength range of 600 nm to 700 nm. Furthermore, organometallic iridium complexes with a pyrazine skeleton yield a red emission with good chromaticity. Other known substances that exhibit red phosphorescence can also be used.

[0235] Organometallic iridium complexes with a 4H-triazole skeleton, such as Tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp)3]) and Tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Mptz)3]). iridium organometallic complexes having a 1H-triazole skeleton, such as tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(Mptz1-mp)3]), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Prptz1-Me)3]), fac-tris[1-(2 [6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpmi)3]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridine]iridium(III) (abbreviation: [Ir(dmpimpt-Me)3]), tris(2-[1-{2,6-bis(1-methylethyl)phenyl}-1H-imidazole-2-yl-κN3]- Organometallic iridium complexes having an imidazole skeleton, such as 4-cyanophenyl-κC) (abbreviated as CNImIr), organometallic complexes having a benzimidazolidene skeleton, such as tris[(6-tert-butyl-3-phenyl-(2H-imidazo[4,5-b]pyrazine-1-yl-κC2)phenyl-κC]iridium(III) (abbreviated as [Ir(cb)3]), and bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ Iridium(III) tetrakis(1-pyrazolyl) borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinate-N,C 2’ Iridium(III) picolinate (abbreviation: Firpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinate-N,C 2’Iridium(III) picolinate (abbreviation: [Ir(CF3ppy)2(pic)]), bis[2-(4',6'-difluorophenyl)pyridinate-N,C 2’ Examples include organometallic iridium complexes that use phenylpyridine derivatives having electron-withdrawing groups, such as iridium(III) acetylacetonate (FIracac), as ligands. These compounds exhibit blue phosphorescence and have emission peaks in the wavelength range of 440 nm to 520 nm.

[0236] Also, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)3]), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)2(acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]), (acetylacetonato)bis[5-methyl-6- Organometallic iridium complexes having a pyrimidine skeleton, such as (2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm)2(acac)]), (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2(acac)]), organometallic iridium complexes having a pyrazine skeleton, such as (acetylacetonato)bis(3,5-dimethyl-2-phenylpyradinato)iridium(III) (abbreviation: [Ir(mppr-Me)2(acac)]), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyradinato)iridium(III) (abbreviation: [Ir(mppr-iPr)2(acac)]), and tris(2-phenylpyridinato-N,C 2’Iridium(III) (abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinate-N,C) 2’ Iridium(III) acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), bis(benzo[h]quinolinate)iridium(III) acetylacetonate (abbreviation: [Ir(bzq)2(acac)]), tris(benzo[h]quinolinate)iridium(III) (abbreviation: [Ir(bzq)3]), tris(2-phenylquinolinate-N,C) 2’ Iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinolinato-N,C) 2’Iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(acac)]), [2-d3-methyl-8-(2-pyridinyl-κN)benzofloflo[2,3-b]pyridinyl-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN2)phenyl-κC]iridium(III) (abbreviation: Ir(5mppy-d3)2(mbfpypy-d3)), [2-(methyl-d3)-8-[4-(1-methylethyl-1-d)-2-pyridinyl-κN]benzo [Flo2,[3-b]pyridinyl-7-yl-κC]bis[5-(methyl-d3)-2-[5-(methyl-d3)-2-pyridinyl-κN]phenyl-κC]iridium(III) (abbreviation: Ir(5mtpy-d6)2(mbfpypy-iPr-d4)), [2-d3-methyl-(2-pyridinyl-κN)benzoflo[2,3-b]pyridinyl-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy)2(mbfpy py-d3)), [2-(4-d3-methyl-5-phenyl-2-pyridinyl-κN2)phenyl-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN2)phenyl-κC]iridium(III) (abbreviation: [Ir(5mppy-d3)2(mdppy-d3)]), [2-methyl-(2-pyridinyl-κN)benzofloflo[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: [Ir(ppy Examples include organometallic iridium complexes having a pyridine skeleton, such as [2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy)2(mdppy)), as well as rare earth metal complexes such as tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: [Tb(acac)3(Phen)]). These are compounds that mainly exhibit green phosphorescence and have emission peaks in the wavelength range of 500 nm to 600 nm. Organometallic iridium complexes having a pyrimidine skeleton are particularly preferred due to their outstanding reliability and luminescence efficiency.

[0237] As TADF materials, fullerenes and their derivatives, acridines and their derivatives, eosin derivatives, etc., can be used. Also, metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd) can be used. Examples of metal-containing porphyrins include protoporphyrin-tin fluoride complexes (SnF2(Proto IX)), mesoporphyrin-tin fluoride complexes (SnF2(Meso IX)), hematoporphyrin-tin fluoride complexes (SnF2(Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complexes (SnF2(Copro III-4Me)), octaethylporphyrin-tin fluoride complexes (SnF2(OEP)), etioporphyrin-tin fluoride complexes (SnF2(Etio I)), and octaethylporphyrin-platinum chloride complexes (PtCl2OEP), as shown in the following structural formulas.

[0238] [ka]

[0239] Furthermore, the following structural formulas represent 2-(biphenyl-4-yl)-4,6-bis(12-phenylindoro[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-9'-phenyl-9H,9'H-3,3'-bicarbazol (abbreviation: PCCzTzn), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazine-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn) Heterocyclic compounds having one or both of a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring can also be used, such as PXZ-TRZ, 3-[4-(5-phenyl-5,10-dihydrophenazine-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviated as PPZ-3TPT), 3-(9,9-dimethyl-9H-acridine-10-yl)-9H-xanthene-9-one (abbreviated as ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviated as DMAC-DPS), and 10-phenyl-10H,10'H-spiro[acridine-9,9'-anthracene]-10'-one (abbreviated as ACRSA). The heterocyclic compound is preferred because it has both a π-electron-excess heteroaromatic ring and a π-electron-deficient heteroaromatic ring, resulting in high electron transport and hole transport properties. Among the skeletons having a π-electron-deficient heteroaromatic ring, the pyridine skeleton, diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), and triazine skeleton are preferred because they are stable and reliable. In particular, the benzoflopyrimidine skeleton, benzothienopyrimidine skeleton, benzoflopyrazine skeleton, and benzothienopyrazine skeleton are preferred because they have high acceptability and are reliable. Furthermore, among the skeletons having a π-electron-excess heteroaromatic ring, the acridine skeleton, phenoxazine skeleton, phenothiazine skeleton, furan skeleton, thiophene skeleton, and pyrrole skeleton are preferred because they are stable and reliable, and therefore it is preferable to have at least one of these skeletons.Furthermore, a dibenzofuran skeleton is preferred as the furan skeleton, and a dibenzothiophene skeleton is preferred as the thiophene skeleton. In addition, as the pyrrole skeleton, indole skeleton, carbazole skeleton, indrocarbazole skeleton, bicarbazole skeleton, and 3-(9-phenyl-9H-carbazole-3-yl)-9H-carbazole skeleton are particularly preferred. Substances in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded are particularly preferred because both the electron-donating and electron-accepting properties of the π-electron-rich heteroaromatic ring are strengthened, and the energy difference between the S1 and T1 levels is reduced, thus efficiently obtaining thermally activated delayed fluorescence. In addition, an aromatic ring to which an electron-withdrawing group such as a cyano group is bonded may be used instead of the π-electron-deficient heteroaromatic ring. Furthermore, aromatic amine skeletons, phenazine skeletons, etc., can be used as the π-electron-rich skeleton. Furthermore, as π-electron-deficient skeletons, xanthene skeletons, thioxanthene dioxide skeletons, oxadiazole skeletons, triazole skeletons, imidazole skeletons, anthraquinone skeletons, boron-containing skeletons such as phenylborane and volanthrene, aromatic rings having a nitrile group or a cyano group such as benzonitrile or cyanobenzene, heteroaromatic rings, carbonyl skeletons such as benzophenone, phosphine oxide skeletons, sulfone skeletons, etc., can be used. In this way, π-electron-deficient skeletons and π-electron-excess skeletons can be used instead of at least one of π-electron-deficient heteroaromatic rings and π-electron-excess heteroaromatic rings.

[0240] [ka]

[0241] Furthermore, TADF materials that enable extremely fast and reversible intersystem crossing, and in which singlet and triplet excited states emit light according to a thermal equilibrium model, may also be used. Such TADF materials have an extremely short emission lifetime (excitation lifetime) as TADF materials, and can suppress efficiency degradation in the high-brightness region of light-emitting devices. Specifically, materials with molecular structures like those shown below can be used.

[0242] [ka]

[0243] TADF materials are materials that have a small difference between the S1 and T1 energy levels and possess the ability to convert energy from triplet excitation energy to singlet excitation energy through reverse intersystem crossing. Therefore, triplet excitation energy can be upconverted to singlet excitation energy with only a small amount of thermal energy (reverse intersystem crossing), and singlet excited states can be efficiently generated. Furthermore, triplet excitation energy can be converted into luminescence.

[0244] Furthermore, an excited complex (also called an exciplex) that forms an excited state with two types of substances has an extremely small difference between the S1 and T1 levels and functions as a TADF material that can convert triplet excitation energy into singlet excitation energy.

[0245] Furthermore, the phosphorescence spectrum observed at low temperatures (e.g., 77K to 10K) can be used as an indicator of the T1 level. For TADF materials, when a tangent is drawn at the short-wavelength tail of the fluorescence spectrum and the energy at the wavelength of the extrapolation is taken as the S1 level, and when a tangent is drawn at the short-wavelength tail of the phosphorescence spectrum and the energy at the wavelength of the extrapolation is taken as the T1 level, it is preferable that the difference between S1 and T1 is 0.3 eV or less, and more preferably 0.2 eV or less.

[0246] Furthermore, when using TADF material as a light-emitting material, it is preferable that the S1 level of the host material is higher than the S1 level of the TADF material. Also, it is preferable that the T1 level of the host material is higher than the T1 level of the TADF material.

[0247] Examples of electron transport materials used as host materials include metal complexes such as bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviated as BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviated as BAlq), bis(8-quinolinolato)zinc(II) (abbreviated as Znq), bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviated as ZnPBO), and bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviated as ZnBTZ), as well as organic compounds having a π-electron-deficient heteroaromatic ring. Examples of organic compounds having a π-electron-deficient heteroaromatic ring include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviated as PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviated as TAZ), and 1,3-bis[5-(p-tert-butylphenyl)-1,3,4 -Oxadiazole-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazole-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1- Organic compounds containing heteroaromatic rings with a polyazole skeleton, such as phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDB TBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 2,6-Bis(4-naphthalene-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviation: 2,4NP-6PyPPm), 6-(1,1'-biphenyl-3-yl)-4-[3,5-bis(9H-carbazole-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm), 4-[3,5-bis(9H-carbazole-9-yl)phenyl]-2-phenyl-6-(1,1'-biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), 7-[4-(9-phenyl-9H-carbazole-2- [(Il)quinazoline-2-yl]-7H-dibenzo[c,g]carbazole (abbreviation: PC-cgDBCzQz), 11-[(3'-dibenzothiophen-4-yl)biphenyl-3-yl]phenanthro[9',10':4,5]flo[2,3-b]pyrazine (abbreviation: 11mDBtBPPnfpr), 11-[(3'-dibenzothiophen-4-yl)biphenyl-4-yl]phenanthro[9',10':4,5]flo[2,3-b]pyrazine, 11-[(3'-(9H-carbazole-9-yl)biphenyl-3-yl]phenanthro[9',10' :4,5]Flo[2,3-b]pyrazine, 12-(9'-phenyl-3,3'-bi-9H-carbazole-9-yl)phenantro[9',10':4,5]Flo[2,3-b]pyrazine (abbreviation: 12PCCzPnfpr), 9-[(3'-9-phenyl-9H-carbazole-3-yl)biphenyl-4-yl]naphtho[1',2':4,5]Flo[2,3-b]pyrazine (abbreviation: 9pmPCBPNfpr), 9-(9'-phenyl-3,3'-bi-9H-carbazole-9-yl)naphtho[1',2':4,5]Flo[2,3-b]pyrazine (abbreviation :9PCCzNfpr), 10-(9'-phenyl-3,3'-bi-9H-carbazole-9-yl)naphtho[1',2':4,5]flo[2,3-b]pyrazine (abbreviation: 10PCCzNfpr), 9-[3'-(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)biphenyl-3-yl]naphtho[1',2':4,5]flo[2,3-b]pyrazine (abbreviation: 9mBnfBPNfpr), 9-{3-[6-(9,9-dimethylfluoren-2-yl)dibenzothiophen-4-yl]phenyl}naphtho[1',2':4,5]flo[2,3-b]pyrazine (abbreviation: 9mFDBtPNfpr), 9-[3'-(6-phenyldibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]flo[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr-02), 9-[3-(9'-phenyl-3,3'-bi-9H-carbazole-9-yl)phenyl]naphtho[1',2':4,5]flo[2,3-b]pyrazine (abbreviation: 9mPCCzPNfpr), 9-{(3'-[2,8-diphenyldibenzothiophen-4-yl]biphenyl-3-yl}naphtho[1',2' Organic compounds containing heteroaromatic rings with a diazine skeleton, such as [4,5]flo[2,3-b]pyrazine and 11-{3'-[2,8-diphenyldibenzothiophen-4-yl]biphenyl-3-yl}phenantro[9',10':4,5]flo[2,3-b]pyrazine; organic compounds containing heteroaromatic rings with a pyridine skeleton, such as 3,5-bis[3-(9H-carbazole-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy) and 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB); and 2-[3'-(9,9-dimethyl -9H-fluoren-2-yl)-1,1'-biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 2-[(1,1'-biphenyl)-4-yl]-4-phenyl-6-[9,9'-spirobio(9H-fluoren)-2-yl]-1,3,5-triazine (abbreviation: BP-SFTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), 2-{3-[3-(benzo[b]naph To[1,2-d]furan-6-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn-02), 5-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 2-[3'-(triphenylene-2-yl)-1,1'-biphenyl-3-yl]-4,6-diphenyl'1,3,5-triazine (abbreviation: mTpBPTzn), 9-[4-(4,6-diphenyl-1,3,Examples of organic compounds containing heteroaromatic rings having a triazine skeleton include 5-triazine-2-yl)-2-dibenzothiophenyl]-2-phenyl-9H-carbazole (abbreviated as PCDBfTzn) and 2-[1,1'-biphenyl]-3-yl-4-phenyl-6-(8-[1,1':4',1''-terphenyl]-4-yl-1-dibenzofuranyl)-1,3,5-triazine (abbreviated as mBP-TPDBfTzn). Among the above, organic compounds containing heteroaromatic rings having a diazine skeleton, organic compounds containing heteroaromatic rings having a pyridine skeleton, and organic compounds containing heteroaromatic rings having a triazine skeleton are preferred due to their good reliability. In particular, organic compounds containing heteroaromatic rings having a diazine (pyrimidine, pyrazine) skeleton and organic compounds containing heteroaromatic rings having a triazine skeleton have high electron transport properties and contribute to reducing the driving voltage.

[0248] As hole transport materials used in host materials, organic compounds having an amine skeleton and a π-electron-rich heteroaromatic ring can be used. Examples of such organic compounds having an amine skeleton and a π-electron-rich heteroaromatic ring include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviated as NPB), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (abbreviated as TPD), 4,4'-bis[N-(spiro-9,9'-bifluoren-2-yl)-N-phenylamino]biphenyl (abbreviated as BSPB), and 4-phenyl-4'-(9-phenylfluoren-9-yl) Diphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenyl Aromatic compounds such as amines (abbreviated as PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as PCBNBB), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]fluoren-2-amine (abbreviated as PCBAF), and N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]spiro-9,9'-bifluoren-2-amine (abbreviated as PCBASF) Compounds having a mine skeleton, 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-bis(9,9-dimethyl-9H-fluoren-2-yl)amine (abbreviation: PCBFF), N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-4-amine, N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-(9,9-dimethyl-9H-fluoren-2-yl)-9,9-dimethyl-9H-fluoren-4-amine, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-diphenyl-9H-fluoren-4-amine Oren-2-amine, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-diphenyl-9H-fluoren-4-amine, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9'-spirobi(9H-fluoren)-2-amine (abbreviation: PCBBiSF), N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3- [9,9'-Spirobi(9H-fluorene)-4-amine, N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-N-(1,1':3',1''-terphenyl-4-yl)-9,9-dimethyl-9H-fluorene-2-amine, N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-N-(1,1':4',1''-terphenyl-4-yl)-9,9-dimethyl-9H-fluorene-2-amine, N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-N-(1,1':4',1''-terphenyl-4-yl)-9,9-dimethyl-9H-fluorene-2-amine, N-[4-(9-phenyl-9H-carb Compounds having a carbazole skeleton such as 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,Compounds having a thiophene skeleton such as 8-diphenyl-4-[4-(9-phenyl-9H-fluorene-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), 4-[4-(9-phenyl-9H-fluorene-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), etc., and compounds having a furan skeleton such as 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II), 4-{3-[3-(9-phenyl-9H-fluorene-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II), etc. Among the above-mentioned ones, compounds having an aromatic amine skeleton and compounds having a carbazole skeleton are preferable because they have good reliability, high hole transportability, and contribute to reducing the driving voltage. Also, the organic compounds exemplified as materials having hole transportability in the hole transport layer 112 can also be used as the host hole transport material.,

[0249] In addition, by mixing an electron transport material and a hole transport material, the transportability of the light-emitting layer 113 can be easily adjusted, and the control of the recombination region can be simply performed. Also, the TADF material can also be used as an electron transport material or a hole transport material.

[0250] As the TADF material that can be used as a host material, those previously mentioned as TADF materials can be used in the same way. When the TADF material is used as the host material, the triplet excitation energy generated in the TADF material is converted into singlet excitation energy by reverse intersystem crossing, and further, by energy transfer to the light-emitting substance, the light-emitting efficiency of the organic EL device can also be increased. At this time, the TADF material functions as an energy donor, and the light-emitting substance functions as an energy acceptor.

[0251] This is particularly effective when the light-emitting material is a fluorescent material. Furthermore, in order to obtain high luminescence efficiency, it is preferable that the S1 level of the TADF material is higher than that of the fluorescent material. Also, it is preferable that the T1 level of the TADF material is higher than that of the fluorescent material. Therefore, it is preferable that the T1 level of the TADF material is higher than that of the fluorescent material.

[0252] Furthermore, it is preferable to use a TADF material that exhibits emission that overlaps with the wavelength of the lowest-energy absorption band of the fluorescent material. This is preferable because it allows for smooth transfer of excitation energy from the TADF material to the fluorescent material, resulting in efficient emission.

[0253] In addition, in order to efficiently generate singlet excited energy from triplet excited energy by reverse intersystem crossing, it is preferable that carrier recombination occurs in the TADF material. Further, it is preferable that the triplet excited energy generated in the TADF material does not transfer to the triplet excited energy of the fluorescent substance. For this purpose, it is preferable that the fluorescent substance has a protecting group around the luminophore (skeleton causing luminescence) of the fluorescent substance. As the protecting group, a substituent having no π bond is preferable, a saturated hydrocarbon is preferable, and specifically, an alkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, and a trialkylsilyl group having 3 to 10 carbon atoms can be mentioned, and it is more preferable that there are a plurality of protecting groups. Since a substituent having no π bond has poor function of transporting carriers, it is possible to increase the distance between the TADF material and the luminophore of the fluorescent substance hardly affecting carrier transport and carrier recombination. Here, the luminophore refers to an atomic group (skeleton) causing luminescence in the fluorescent substance. The luminophore preferably has a skeleton having a π bond, preferably contains an aromatic ring, and preferably has a condensed aromatic ring or a condensed heteroaromatic ring. Examples of the condensed aromatic ring or the condensed heteroaromatic ring include a phenanthrene skeleton, a stilbene skeleton, an acridone skeleton, a phenoxazine skeleton, and a phenothiazine skeleton. In particular, fluorescent substances having a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, and a naphthobisbenzofuran skeleton are preferable because of their high fluorescence quantum yield.

[0254] When using a fluorescent material as the light-emitting material, a material having an anthracene skeleton is preferred as the host material. Using a material having an anthracene skeleton as the host material for a fluorescent material makes it possible to realize a light-emitting layer with good luminescence efficiency and durability. Among the materials having an anthracene skeleton to be used as the host material, materials having a diphenylanthracene skeleton, and especially a 9,10-diphenylanthracene skeleton, are preferred because they are chemically stable. Furthermore, while a carbazole skeleton is preferred as the host material because it improves hole injection and transport, a benzocarbazole skeleton, in which a benzene ring is further condensed into carbazole, is even more preferred because the HOMO is about 0.1 eV shallower than carbazole, making it easier for holes to enter. In particular, a dibenzocarbazole skeleton is preferred as the HOMO is about 0.1 eV shallower than carbazole, making it easier for holes to enter, and it also has excellent hole transport properties and high heat resistance. Therefore, a more preferable host material is a substance that simultaneously possesses a 9,10-diphenylanthracene skeleton and a carbazole skeleton (or a benzocarbazole skeleton, or a dibenzocarbazole skeleton). Furthermore, from the viewpoint of hole injection and transport properties, a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of the carbazole skeleton.Examples of such substances include 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviated as PCzPA), 3-[4-(1-naphthyl)-phenyl]-9-phenyl-9H-carbazole (abbreviated as PCPN), 9-[4-(10-phenyl-9-antracenyl)phenyl]-9H-carbazole (abbreviated as CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviated as cgDBCzPA), and 6-[3-(9,10-diphenyl-2 -Anthryl)phenyl]-benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-{4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4'-yl}anthracene (abbreviation: FLPPA), 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 9-(1-naphthyl)-10-(2-naphthyl)anthracene (abbreviation: α,βADN), 2-(10-phenylanthracene-9-yl)dibenzofuran, 2-(10-phenyl- 9-Anthracenyl)-benzo[b]naphtho[2,3-d]furan (abbreviation: Bnf(II)PhA), 9-(2-naphthyl)-10-[3-(2-naphthyl)phenyl]anthracene (abbreviation: βN-mβNPAnth), 1-[4-(10-[,1,1'-biphenyl]-4-yl-9-anthracenyl)phenyl]-2-ethyl-1H-benzimidazole (abbreviation: EtBImPBPhA), 2,9-di(1-naphthyl)-10-phenylanthracene (abbreviation: 2αN-αNPhA), 9-(1-naphthyl)-10-[3-(1-naphthyl Examples include αN-mαNPAnth, βN-mαNPAnth, βN-mαNPAnth, βN-4NPAnth, βN-4NPAnth, βN-4NPAnth, βN-4NPAnth, βN-4NPAnth, andIn particular, CzPA, cgDBCzPA2mBnfPPA, and PCzPA exhibit very good properties and are therefore preferred choices.

[0255] Furthermore, phosphorescent materials can be used as part of the above-mentioned mixed materials. When a fluorescent material is used as the light-emitting material, the phosphorescent material can be used as an energy donor to supply excitation energy to the fluorescent material.

[0256] Furthermore, an excited complex may be formed between the mixed materials described above. It is preferable to select a combination of materials that forms an excited complex that exhibits emission overlapping with the wavelength of the lowest-energy absorption band of the luminescent material, as this facilitates smooth energy transfer and efficiently obtains light emission. This configuration is also preferable because it reduces the driving voltage.

[0257] Furthermore, at least one of the materials forming the excitation complex may be a phosphorescent material. This allows for the efficient conversion of the triplet excitation energy to the singlet excitation energy through reverse intersystem crossing.

[0258] For efficient excitation complex formation, it is preferable that the HOMO level of the hole-transporting material is above the HOMO level of the electron-transporting material. Furthermore, it is preferable that the LUMO level of the hole-transporting material is above the LUMO level of the electron-transporting material. The LUMO and HOMO levels of the materials can be derived from the electrochemical properties (reduction potential and oxidation potential) of the materials measured by cyclic voltammetry (CV).

[0259] The formation of excited complexes can be confirmed, for example, by comparing the emission spectra of a hole-transporting material, an electron-transporting material, and a mixed film made by mixing these materials, and observing that the emission spectrum of the mixed film shifts to a longer wavelength than the emission spectra of each individual material (or has a new peak on the longer wavelength side). Alternatively, it can be confirmed by comparing the transient photoluminescence (PL) of a hole-transporting material, the transient PL of an electron-transporting material, and the transient PL of a mixed film made by mixing these materials, and observing differences in the transient response, such as the transient PL lifetime of the mixed film having a longer lifetime component or a larger proportion of the delayed component than the transient PL lifetime of each individual material. Furthermore, the transient PL mentioned above can be replaced with transient electroluminescence (EL). That is, the formation of excited complexes can also be confirmed by comparing the transient EL of a hole-transporting material, the transient EL of an electron-transporting material, and the transient EL of a mixed film made by mixing these materials, and observing the differences in the transient response.

[0260] When a hole-blocking layer is provided, the hole-blocking layer is in contact with the light-emitting layer 113 and is formed by including an organic compound that has electron-transporting properties and can block holes. As the organic compound constituting the hole-blocking layer, it is preferable to use a material that has excellent electron-transporting properties, low hole-transporting properties, and a deep HOMO level. Specifically, it is preferable to use a material that has a HOMO level at least 0.5 eV deeper than the HOMO level of the material contained in the light-emitting layer 113, and whose electron mobility at a square root of the electric field strength [V / cm] of 600 is 1 × 10⁻⁶. -6 cm 2 A substance having an electron mobility of / Vs or higher is preferred.

[0261] In particular, 2-{3-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}dibenzo[f,h]quinoxaline (abbreviation: 2mPCCzPDBq), 2-{3-[2-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}dibenzo[f,h]quinoxaline (abbreviation: 2mPCCzPDBq-02), 2-{3-[3-(N-phenyl-9H-carbazol-2-yl)-9H-carbazol-9-yl]phenyl}dibenzo[f,h]quinoxaline (abbreviation: 2 mPCCzPDBq-03), 2-{3-[3-(N-(3,5-di-tert-butylphenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}dibenzo[f,h]quinoxaline, 9-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-9'-phenyl-3,3'-bi-9H-carbazol (abbreviation: mPCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazol (abbreviation: mPC CzPTzn-02), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-9'-phenyl-3,3'-bi-9H-carbazol (abbreviation: PCCzTzn(CzT)), 9-[3-(4,6-diphenyl-pyrimidine-2-yl)phenyl]-9'-phenyl-3,3'-bi-9H-carbazol (abbreviation: 2PCCzPPm), 9- (4,6-diphenylpyrimidine-2-yl)-9'-phenyl-3,3'-bi-9H-carbazole (abbreviation: 2PCCzPm), 4-[2-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]benzoflo[3,2-d]pyrimidine (abbreviation: 4PCCzBfpm-02), 4-{3-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}benzo[h]quinazoline, 9-[3-(2,6-diphenylpyridine-4-yl)phenyl]-9'-phenyl-3,3'-bi-9H-carbazole is preferred due to its good heat resistance.

[0262] If other materials are used as the hole blocking layer, an organic compound having a HOMO level deeper than the HOMO level of the material contained in the light-emitting layer 113 should be selected from the materials that can be used in the hole transport layer described later.

[0263] The electron transport layer 114 is an organic compound with electron transport properties, and its electron mobility at an electric field strength [V / cm] square root of 600 is 1 × 10⁻⁶. -6 cm 2 A substance having an electron mobility of 1 / Vs or higher is preferred. However, any substance that has higher electron transport than holes can be used. As the above organic compound, an organic compound having a π-electron-deficient heteroaromatic ring is preferred. As an organic compound having a π-electron-deficient heteroaromatic ring, it is preferable that it be any or more of the following: an organic compound containing a heteroaromatic ring having a polyazole skeleton, an organic compound containing a heteroaromatic ring having a pyridine skeleton, an organic compound containing a heteroaromatic ring having a diazine skeleton, and an organic compound containing a heteroaromatic ring having a triazine skeleton.

[0264] Organic compounds having a π-electron-deficient heteroaromatic ring that can be used in the above electron transport layer include, specifically, 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviated as PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviated as TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazole-2-yl]benzene (abbreviated as OXD-7), and 9-[4-(5-phenyl-1,3,4-oxy- Organic compounds having an azole skeleton, such as xadiazole-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), 4,4'-bis(5-methylbenzoxazole-2-yl)stilbene (abbreviation: BzOs), and 3,5-bis[3-(9H-carbazole-9-yl) Organic compounds containing heteroaromatic rings with a pyridine skeleton, such as phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), vasophenanthroline (abbreviation: Bphen), vasocuproin (abbreviation: BCP), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBphen), 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3' -(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazole-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4'-(9-phenyl-9H-carbazole-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), 2-[4-(3,6-diphenyl-9H-carbazole-9-yl)phenyl]dibenzo[f,[h]Quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]Quinoxaline (abbreviation: 7mDBTPDBq-II), and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]Quinoxaline (abbreviation: 6mDBTPDBq-II), 9-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]flo[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr), 9-[(3'-dibenzothiophen-4-yl)biphenyl [4-yl]naphtho[1',2':4,5]flo[2,3-b]pyrazine (abbreviation: 9pmDBtBPNfpr), 4,6-bis[3-(phenanthren-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazole-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), 9,9'-[pyrimidine-4,6-diylbis(biphenyl-3,3'-diyl)]bis(9H- Luvazole) (abbreviation: 4,6mCzBP2Pm), 8-(1,1'-biphenyl-4-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzoflo[3,2-d]pyrimidine (abbreviation: 8BP-4mDBtPBfpm), 3,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzoflo[2,3-b]pyrazine (abbreviation: 3,8mDBtP2Bfpr), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]-[1]benzoflo[3,2-d]pyrimidine (abbreviation: 4,8mDBtP2Bfpm), 8- [3'-(dibenzothiophen-4-yl)(1,1'-biphenyl-3-yl)]naphtho[1',2':4,5]flo[3,2-d]pyrimidine (abbreviation: 8mDBtBPNfpm), 8-[(2,2'-binaphthalene)-6-yl]-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzoflo[3,2-d]pyrimidine (abbreviation: 8(βN2)-4mDBtPBfpm), 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn)2Py), 2,2'-(pyridine-2,6-diyl)bis{4-[4-(2-naphthyl)phenyl]-6-phenylpyrimidine} (abbreviation: 2,6(NP-PPm)2Py), 6-(1,1'-biphenyl-3-yl)-4-[3,5-bis(9H-carbazole-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm), 2,6-bis(4-naphthalene-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviation: 2,4NP-6PyPPm), 4-[3,5-bis(9H-carbazole-9-yl)phenyl]-2-phenyl-6-( 1,1'-biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), 7-[4-(9-phenyl-9H-carbazole-2-yl)quinazoline-2-yl]-7H-dibenzo[c,g]carbazole (abbreviation: PC-cgDBCzQz), 8-(1,1':4',1”-terphenyl-3-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-benzoflo[3,2-d]pyrimidine (abbreviation: 8mpTP-4mDBtPBfpm), 4,8-bis[3-(dibenzofuran-4-yl)phenyl]benzoflo[3,2-d]pyrimidine Midine, 8-(1,1':4',1”-terphenyl-3-yl)-4-[3-(dibenzothiophen-4-yl)biphenyl-4-yl]-benzoflo[3,2-d]pyrimidine, 4,8-bis[3-(9H-carbazole-9-yl)phenyl]benzoflo[3,2-d]pyrimidine (abbreviation: 4,8mCzP2Bfpm), 8-(1,1':4',1”-terphenyl-3-yl)-4-[3-(9-phenyl-9H-carbazole-3-yl)phenyl]-benzoflo[3,2-d]pyrimidine, 8-(1,1'-biphenyl-4-yl)-4- [3-(9-phenyl-9H-carbazole-3-yl)biphenyl-3-yl]-benzoflo[3,2-d]pyrimidine, 8-(1,1'-biphenyl-4-yl)-4-{3-[2-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}benzoflo[3,2-d]pyrimidine, 8-phenyl-4-{3-[2-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}benzoflo[3,2-d]pyrimidine, 8-(1,1'-biphenyl-4-yl)-4-(3,Organic compounds having a diazine skeleton such as 5-di-9H-carbazole-9-yl-phenyl)benzofl[3,2-d]pyrimidine, 2-[3'-(9,9-dimethyl-9H-fluoren-2-yl)-1,1'-biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 2-[(1,1'-biphenyl)-4-yl]-4-phenyl-6-[9,9'-spirobio(9H-fluoren)-2-yl]-1,3,5-triazine (abbreviation: BP-SFTzn), 2-{3-[3-(benzo[b]naphtho[1,2 -d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-6-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn-02), 2-{4-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 9-[3-(4,6-diphenyl-1 ,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 2-{3-[3-(dibenzothiophen-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazin (abbreviation: mDBtBPTzn), 2,4,6-tris(3'-(pyridine-3-yl) Biphenyl-3-yl)-1,3,5-triazine (abbreviation: TmPPPyTz), 2-[3-(2,6-dimethyl-3-pyridyl)-5-(9-phenanthryl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn), 11-(4-[1,1'-diphenyl]-4-yl-6-phenyl-1,3,5-triazine-2-yl)-11,12-dihydro-12-phenyl-indoro[2,3-a]carbazole (abbreviation: BP-Icz(II)Tzn), 2-[3'-(triphenylene-2-yl)-1,Examples of organic compounds having a triazine skeleton include 1'-biphenyl-3-yl]-4,6-diphenyl'1,3,5-triazine (abbreviated as mTpBPTzn), 9-[4-(4,6-diphenyl-1,3,5-triazine-2-yl)-2-dibenzothiophenyl]-2-phenyl-9H-carbazole (abbreviated as PCDBfTzn), and 2-[1,1'-biphenyl]-3-yl-4-phenyl-6-(8-[1,1':4',1''-terphenyl]-4-yl-1-dibenzofuranyl)-1,3,5-triazine (abbreviated as mBP-TPDBfTzn). Among the above, organic compounds containing a heteroaromatic ring having a diazine skeleton, organic compounds containing a heteroaromatic ring having a pyridine skeleton, and organic compounds containing a heteroaromatic ring having a triazine skeleton are preferred due to their good reliability. In particular, organic compounds containing heteroaromatic rings with a diazine (pyrimidine, pyrazine) skeleton and organic compounds containing heteroaromatic rings with a triazine skeleton exhibit high electron transport properties and contribute to reducing the driving voltage.

[0265] Furthermore, the electron transport layer 114 having this configuration may also serve as the electron injection layer 115.

[0266] It is preferable to provide an electron injection layer 115 between the electron transport layer 114 and the common electrode (cathode) 102, which contains an alkali metal or alkaline earth metal such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), or (8-quinolinolato)lithium (abbreviated as Liq), or a compound or complex thereof. A co-deposited film of ytterbium (Yb) and lithium is also preferred. The electron injection layer 115 may be an electron transport layer containing an alkali metal or alkaline earth metal or a compound thereof, or an electride. Examples of electrides include a substance obtained by adding a high concentration of electrons to a mixed oxide of calcium and aluminum.

[0267] Furthermore, as the electron injection layer 115, it is also possible to use a layer containing an alkali metal or alkaline earth metal fluoride in a concentration (50 wt% or more) that is in a microcrystalline state, in a material having electron transport properties (preferably an organic compound having a bipyridine skeleton). Since this layer has a low refractive index, it is possible to provide an organic EL device with better external quantum efficiency.

[0268] Materials that form the cathode include metals, alloys, electrically conductive compounds, and mixtures thereof, all of which have a low work function (specifically, 3.8 eV or less). Specific examples of such cathode materials include alkali metals such as lithium (Li) and cesium (Cs), elements belonging to Group 1 or 2 of the periodic table such as magnesium (Mg), calcium (Ca), and strontium (Sr), and alloys containing these elements (MgAg, AlLi), rare earth metals such as europium (Eu) and ytterbium (Yb), and alloys containing these elements. However, by providing an electron injection layer between the cathode and the electron transport layer, various conductive materials such as Al, Ag, ITO, silicon, or indium oxide-tin oxide containing silicon oxide can be used as the cathode, regardless of the magnitude of their work function.

[0269] These conductive materials can be formed using dry methods such as vacuum deposition and sputtering, as well as inkjet and spin coating methods. Alternatively, they may be formed using wet methods such as the sol-gel method, or using a paste made of a metal material.

[0270] Furthermore, various methods can be used to form the EL layer 103, regardless of whether they are dry or wet methods. For example, vacuum deposition, gravure printing, offset printing, screen printing, inkjet printing, or spin coating may be used.

[0271] Furthermore, each electrode or layer described above may be formed using different film deposition methods.

[0272] Note that the configuration of the layer provided between the anode and the cathode is not limited to the above. However, in order to suppress the quenching caused by the proximity of the light-emitting region, the electrodes, and the metal used for the carrier injection layer, a configuration in which a light-emitting region where holes and electrons recombine is provided at a site far from the anode and the cathode is preferable.

[0273] In addition, the hole transport layer and the electron transport layer in contact with the light-emitting layer 113, particularly the carrier transport layer close to the recombination region in the light-emitting layer 113, preferably have a band gap larger than the band gap of the light-emitting material constituting the light-emitting layer or the band gap of the light-emitting material contained in the light-emitting layer in order to suppress energy transfer from the excitons generated in the light-emitting layer.

[0274] Note that the configuration of this embodiment can be used in appropriate combination with the configurations of other embodiments.

[0275] (Embodiment 5) In this embodiment, a light-emitting device using an organic EL device manufactured by using the manufacturing method of the organic EL device described in Embodiment 2 and Embodiment 3 will be described with reference to FIGS. 9A and 9B. Note that FIG. 9A is a top view showing the light-emitting device, and FIG. 9B is a cross-sectional view taken along the dashed-dotted line A-B and the dashed-dotted line C-D shown in FIG. 9A. This light-emitting device includes a drive circuit portion (source line drive circuit) 601, a pixel portion 602, and a drive circuit portion (gate line drive circuit) 603 shown by dashed lines as a device for controlling the light emission of the organic EL device. Further, 604 is a sealing substrate, 605 is a sealing material, and the inside surrounded by the sealing material 605 is a space 607.

[0276] The routing wiring 608 is for transmitting signals input to the source line drive circuit 601 and the gate line drive circuit 603, and receives video signals, clock signals, start signals, reset signals, etc. from the FPC (flexible printed circuit) 609, which serves as an external input terminal. Although only the FPC is shown in this illustration, a printed circuit board (PWB) may be attached to this FPC. In this specification, the light-emitting device includes not only the light-emitting device itself, but also the state in which the FPC or PWB is attached to it.

[0277] Next, the cross-sectional structure will be explained using Figure 9B. A drive circuit section and a pixel section are formed on the element substrate 610, and here, the source line drive circuit 601, which is the drive circuit section, and one pixel in the pixel section 602 are shown.

[0278] The element substrate 610 may be manufactured using a substrate made of glass, quartz, organic resin, metal, alloy, semiconductor, or other materials, as well as a plastic substrate made of FRP (Fiber Reinforced Plastics), PVF (Polyvinyl Fluoride), polyester, or acrylic resin.

[0279] The structure of the transistors used in the pixels and driving circuits is not particularly limited. For example, they may be inverse staggered transistors or staggered transistors. They may also be top-gate or bottom-gate transistors. The semiconductor material used for the transistors is not particularly limited; for example, silicon, germanium, silicon carbide, gallium nitride, etc., can be used. Alternatively, an oxide semiconductor containing at least one of indium, gallium, and zinc, such as an In-Ga-Zn metal oxide, may be used.

[0280] The crystallinity of the semiconductor material used in the transistor is not particularly limited; amorphous semiconductors, crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or semiconductors having a crystalline region in part) may be used. Using a crystalline semiconductor is preferable because it can suppress the degradation of transistor characteristics.

[0281] Here, it is preferable to use oxide semiconductors for semiconductor devices such as the pixels, the transistors provided in the driving circuit, and transistors used in touch sensors, which will be described later. In particular, it is preferable to use oxide semiconductors with a wider bandgap than silicon. By using oxide semiconductors with a wider bandgap than silicon, the current in the off state of the transistor can be reduced.

[0282] The above oxide semiconductor preferably contains at least indium (In) or zinc (Zn). More preferably, it is an oxide semiconductor containing an oxide represented as an In-M-Zn oxide (where M is a metal such as Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf).

[0283] In particular, it is preferable to use an oxide semiconductor film as the semiconductor layer, which has multiple crystalline portions, the c-axis of which is oriented perpendicular to the surface on which the semiconductor layer is formed or to the upper surface of the semiconductor layer, and which does not have grain boundaries between adjacent crystalline portions.

[0284] By using such materials as semiconductor layers, fluctuations in electrical properties can be suppressed, enabling the realization of highly reliable transistors.

[0285] Furthermore, due to its low off-current, the transistor having the aforementioned semiconductor layer can retain the charge stored in the capacitor via the transistor for a long period of time. By applying such transistors to pixels, it becomes possible to maintain the gradation of the image displayed in each display area while simultaneously stopping the drive circuit. As a result, electronic devices with extremely reduced power consumption can be realized.

[0286] It is preferable to provide an underlayer to stabilize the characteristics of the transistor. As the underlayer, an inorganic insulating film such as a silicon oxide film, silicon nitride film, silicon oxynitride film, or silicon nitride film can be used and fabricated as a single layer or in layers. The underlayer can be formed using sputtering, CVD (Chemical Vapor Deposition) (plasma CVD, thermal CVD, MOCVD (Metal Organic CVD), etc.), ALD (Atomic Layer Deposition), coating, printing, etc. Note that the underlayer may be omitted if it is not necessary.

[0287] Note that FET623 is one of the transistors formed in the source line drive circuit 601. The drive circuit can be formed using various CMOS, PMOS, or NMOS circuits. In this embodiment, a driver-integrated type with the drive circuit formed on the substrate is shown, but this is not necessarily required, and the drive circuit can be formed externally instead of on the substrate.

[0288] Furthermore, although the pixel section 602 is formed by a plurality of pixels including a switching FET 611 and a current control FET 612 and a first electrode 613 electrically connected to its drain, it is not limited to this, and the pixel section may be a combination of three or more FETs and a capacitive element.

[0289] Furthermore, an insulator 614 is formed to cover the end of the first electrode 613. This can be formed by using a positive-type photosensitive acrylic resin film.

[0290] Furthermore, in order to ensure good coverage of the EL layer and the like that will be formed later, a curved surface with curvature is formed at the upper or lower end of the insulator 614. For example, when a positive-type photosensitive acrylic resin is used as the material for the insulator 614, it is preferable to have a curved surface with a radius of curvature (0.2 μm to 3 μm) only at the upper end of the insulator 614. In addition, either a negative-type photosensitive resin or a positive-type photosensitive resin can be used as the insulator 614.

[0291] An EL layer 616 and a second electrode 617 are formed on the first electrode 613, respectively. Here, the first electrode 613 functions as an anode. As a material that can be used as an anode, it is desirable to use a material with a large work function. For example, in addition to single-layer films such as ITO film, silicon-containing indium tin oxide film, indium oxide film containing 2-20 wt% zinc oxide, titanium nitride film, chromium film, tungsten film, Zn film, and Pt film, lamination with a silver-based film, lamination with a titanium nitride film and an aluminum-based film, and a three-layer structure of titanium nitride film, aluminum-based film and titanium nitride film can be used. Furthermore, a laminated structure has low resistance as a wiring, good ohmic contact can be obtained, and it can function as an anode.

[0292] Furthermore, the EL layer 616 is formed by various methods such as deposition using a deposition mask, inkjet method, and spin coating method. The EL layer 616 includes the configuration described in Embodiment 1 and Embodiment 3.

[0293] Furthermore, it is preferable to use a material with a small work function (such as Al, Mg, Li, Ca, or alloys and compounds thereof (MgAg, MgIn, AlLi, etc.)) for the second electrode 617 formed on the EL layer 616. When light generated in the EL layer 616 is transmitted through the second electrode 617, it is preferable to use a laminate of a thin metal or alloy film with a thin film thickness and a transparent conductive film (such as ITO, indium oxide containing 2-20 wt% zinc oxide, indium tin oxide containing silicon, zinc oxide (ZnO), etc.) as the second electrode 617.

[0294] The organic EL device is formed by the first electrode 613, the EL layer 616, and the second electrode 617. The organic EL device is an organic EL device manufactured using the organic EL device manufacturing method described in Embodiments 2 and 3. Although the pixel portion is made up of multiple organic EL devices, in the light-emitting device of this embodiment, both organic EL devices manufactured using the organic EL device manufacturing method described in Embodiments 2 and 3 and organic EL devices having other configurations may be mixed. In this case, in the light-emitting device of one aspect of the present invention, a common hole transport layer can be used between organic EL devices that emit light of different wavelengths, making it possible to manufacture a light-emitting device that is simple in terms of manufacturing process and cost-effective.

[0295] Furthermore, by bonding the encapsulation substrate 604 to the element substrate 610 with the sealing material 605, the organic EL device 618 is provided in the space 607 surrounded by the element substrate 610, the encapsulation substrate 604, and the sealing material 605. The space 607 is filled with a filler material, which may be an inert gas (nitrogen, argon, etc.) or a sealing material. A recess is formed in the encapsulation substrate, and a desiccant is provided therein to suppress deterioration due to the effects of moisture, which is a preferred configuration.

[0296] Furthermore, epoxy resin and glass frit are preferably used for the sealing material 605. It is also desirable that these materials are as impermeable to moisture and oxygen as possible. In addition to glass substrates and quartz substrates, plastic substrates made of FRP (Fiber Reinforced Plastics), PVF (Polyvinyl Fluoride), polyester, or acrylic resin can be used as the material for the sealing substrate 604.

[0297] Although not shown in Figures 9A and 9B, a protective film may be provided on the cathode. The protective film may be made of an organic resin film or an inorganic insulating film. Alternatively, the protective film may be formed to cover the exposed portion of the sealing material 605. Furthermore, the protective film can be provided to cover the surface and sides of the pair of substrates, the sealing layer, the insulating layer, and other exposed sides.

[0298] The protective film can be made of a material that is impermeable to impurities such as water. Therefore, it is possible to effectively suppress the diffusion of impurities such as water from the outside to the inside.

[0299] Materials that constitute the protective film can include oxides, nitrides, fluorides, sulfides, ternary compounds, metals, or polymers. For example, materials containing aluminum oxide, hafnium oxide, hafnium silicate, lanthanum oxide, silicon oxide, strontium titanate, tantalum oxide, titanium oxide, zinc oxide, niobium oxide, zirconium oxide, tin oxide, yttrium oxide, cerium oxide, scandium oxide, erbium oxide, vanadium oxide, or indium oxide can be used. Materials containing aluminum nitride, hafnium nitride, silicon nitride, tantalum nitride, titanium nitride, niobium nitride, molybdenum nitride, zirconium nitride, or gallium nitride can be used. Nitrides containing titanium and aluminum, oxides containing titanium and aluminum, oxides containing aluminum and zinc, sulfides containing manganese and zinc, sulfides containing cerium and strontium, oxides containing erbium and aluminum, oxides containing yttrium and zirconium can be used.

[0300] It is preferable to form the protective film using a film deposition method that provides good step coverage. One such method is atomic layer deposition (ALD). It is preferable to use a material that can be formed using the ALD method for the protective film. By using the ALD method, it is possible to form a dense protective film with reduced defects such as cracks and pinholes, or a protective film with a uniform thickness. Furthermore, it is possible to reduce the damage inflicted on the processed workpiece when forming the protective film.

[0301] For example, by forming a protective film using the ALD method, a uniform and defect-free protective film can be formed on surfaces with complex uneven shapes, including the top, sides, and back of a touch panel.

[0302] As described above, a light-emitting device can be obtained that uses an organic EL device fabricated using the organic EL device fabrication method described in Embodiments 2 and 3.

[0303] Since the light-emitting device in this embodiment uses an organic EL device fabricated using the organic EL device fabrication method described in Embodiments 2 and 3, a light-emitting device with good characteristics can be obtained.

[0304] Figures 10A and 10B show examples of light-emitting devices in which color purity is improved by providing a colored layer (color filter), etc. Figure 10A shows a substrate 1001, a base insulating film 1002, a gate insulating film 1003, gate electrodes 1006, 1007, 1008, a first interlayer insulating film 1020, a second interlayer insulating film 1021, a peripheral portion 1042, a pixel portion 1040, a drive circuit portion 1041, first electrodes 1024R, 1024G, 1024B of the organic EL device, a partition wall 1025, an EL layer 1028, a common electrode (cathode) 1029 of the organic EL device, a sealing substrate 1031, a sealing material 1032, etc.

[0305] In Figure 10A, the colored layers (red colored layer 1034R, green colored layer 1034G, and blue colored layer 1034B) are provided on a transparent substrate 1033. A black matrix 1035 may also be provided. The transparent substrate 1033 on which the colored layers and black matrix are provided is aligned and fixed to the substrate 1001. The colored layers and black matrix 1035 are covered with an overcoat layer 1036.

[0306] Figure 10B shows an example in which colored layers (red colored layer 1034R, green colored layer 1034G, and blue colored layer 1034B) are formed between the gate insulating film 1003 and the first interlayer insulating film 1020. Thus, the colored layers may also be provided between the substrate 1001 and the encapsulating substrate 1031.

[0307] Furthermore, although the light-emitting device described above is a bottom-emission type light-emitting device with a structure that extracts light from the substrate 1001 on which the FET is formed, it may also be a top-emission type light-emitting device with a structure that extracts light from the sealing substrate 1031 on which the light-emitting device is formed. A cross-sectional view of the top-emission type light-emitting device is shown in Figure 11. In this case, the substrate 1001 can be a substrate that does not transmit light. The process is the same as for the bottom-emission type light-emitting device until the connecting electrode that connects the FET and the anode of the organic EL device is fabricated. After that, a third interlayer insulating film 1037 is formed covering the electrode 1022. This insulating film may also play a role in planarization. The third interlayer insulating film 1037 can be formed using the same material as the second interlayer insulating film, as well as other known materials.

[0308] The first electrodes 1024R, 1024G, and 1024B of the organic EL device are designated as anodes here, but they may also be cathodes. Furthermore, in the case of a top-emission type light-emitting device as shown in Figure 11, it is preferable to use a reflective electrode as the anode. The configuration of the EL layer 1028 is the same as that described as EL layer 103 in Embodiment 1.

[0309] In a top emission structure as shown in Figure 11, encapsulation can be performed using an encapsulation substrate 1031 provided with colored layers (red colored layer 1034R, green colored layer 1034G, and blue colored layer 1034B). A black matrix 1035 may also be provided on the encapsulation substrate 1031 so as to be located between pixels. The colored layers (red colored layer 1034R, green colored layer 1034G, and blue colored layer 1034B) and the black matrix may be covered with an overcoat layer (not shown). The encapsulation substrate 1031 should be a translucent substrate.

[0310] In top-emission type light-emitting devices, a microcavity structure can be suitably applied. An organic EL device having a microcavity structure is obtained by making one electrode an electrode including a reflective electrode and the other electrode a semi-transparent / semi-reflective electrode. At least an EL layer exists between the reflective electrode and the semi-transparent / semi-reflective electrode, and at least a light-emitting layer that forms a light-emitting region exists.

[0311] The reflective electrode has a visible light reflectance of 40% to 100%, preferably 70% to 100%, and its resistivity is 1 × 10⁻⁶. -2 The film thickness is assumed to be Ωcm or less. Furthermore, the semi-transparent / semi-reflective electrode has a visible light reflectance of 20% to 80%, preferably 40% to 70%, and its resistivity is 1 × 10⁻⁶. -2 Assume the membrane is less than Ωcm in diameter.

[0312] The light emitted from the light-emitting layer contained in the EL layer is reflected by the reflective electrode and the semi-transparent / semi-reflective electrode, causing resonance.

[0313] This organic EL device allows for changing the optical distance between the reflective electrode and the semi-transparent / semi-reflective electrode by varying the thickness of the transparent conductive film, the aforementioned composite material, and the carrier transport material. This makes it possible to enhance light of resonant wavelengths and attenuate light of non-resonant wavelengths between the reflective electrode and the semi-transparent / semi-reflective electrode.

[0314] Furthermore, since the light reflected back by the reflective electrode (first reflected light) interferes significantly with the light that directly enters the semi-transparent / semi-reflective electrode from the light-emitting layer (first incident light), it is preferable to adjust the optical distance between the reflective electrode and the light-emitting layer to (2n-1)λ / 4 (where n is a natural number greater than or equal to 1, and λ is the wavelength of the light emission to be amplified). By adjusting this optical distance, the phases of the first reflected light and the first incident light can be aligned, and the light emission from the light-emitting layer can be further amplified.

[0315] In the above configuration, the EL layer may have a structure with multiple light-emitting layers or a structure with a single light-emitting layer. For example, it may be applied to a configuration in which multiple EL layers are provided in a single organic EL device with a charge generation layer in between, and one or more light-emitting layers are formed in each EL layer, in combination with the tandem type organic EL device configuration described above.

[0316] By incorporating a microcavity structure, it becomes possible to enhance the emission intensity in the front direction at specific wavelengths, thereby reducing power consumption. Furthermore, in the case of a light-emitting device that displays images using four sub-pixels of red, yellow, green, and blue, in addition to the brightness enhancement effect of yellow emission, a microcavity structure tailored to the wavelength of each color can be applied to all sub-pixels, resulting in a light-emitting device with excellent characteristics.

[0317] Since the light-emitting device in this embodiment uses an organic EL device fabricated using the organic EL device fabrication method described in Embodiments 2 and 3, a light-emitting device with excellent characteristics can be obtained. The light-emitting device described above is suitable for use as a display device for displaying images because it is possible to control a large number of minute organic EL devices arranged in a matrix.

[0318] Furthermore, this embodiment can be freely combined with other embodiments.

[0319] (Embodiment 6) This embodiment describes an example of an electronic device that includes an organic EL device fabricated using the organic EL device fabrication method described in Embodiments 2 and 3.

[0320] Examples of electronic devices that utilize the above-mentioned organic EL devices include television equipment (also called televisions or television receivers), monitors for computers, digital cameras, digital video cameras, digital photo frames, mobile phones (also called mobile phones or mobile phone devices), portable game consoles, personal digital assistants, sound playback devices, and large game machines such as pachinko machines. Specific examples of these electronic devices are shown below.

[0321] Figure 12A shows an example of a television system. The television system has a display unit 7103 incorporated into a housing 7101. This figure also shows a configuration in which the housing 7101 is supported by a stand 7105. The display unit 7103 is capable of displaying images, and the display unit 7103 is constructed by arranging organic EL devices, which were fabricated using the organic EL device fabrication method described in Embodiments 2 and 3, in a matrix.

[0322] The television system can be operated using the operation switches on the housing 7101 and a separate remote control unit 7110. The operation keys 7109 on the remote control unit 7110 allow for channel and volume control, and control of the image displayed on the display unit 7103. The remote control unit 7110 may also be configured to include a display unit 7107 that displays information output from the remote control unit 7110. The display unit 7107 can also be fitted with organic EL devices manufactured using the organic EL device manufacturing method described in Embodiments 2 and 3, arranged in a matrix.

[0323] The television system will consist of a receiver, modem, and other components. The receiver will be able to receive general television broadcasts, and by connecting to a wired or wireless communication network via the modem, it will also be possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0324] Figure 12B1 shows a computer, which includes a main unit 7201, a housing 7202, a display unit 7203, a keyboard 7204, an external connection port 7205, a pointing device 7206, etc. This computer is manufactured by arranging organic EL devices, manufactured using the organic EL device manufacturing method described in Embodiments 2 and 3, in a matrix and using them for the display unit 7203. The computer in Figure 12B1 may also take the form shown in Figure 12B2. The computer in Figure 12B2 has a display unit 7210 instead of a keyboard 7204 and a pointing device 7206. The display unit 7210 is a touch panel, and input can be performed by operating the input display shown on the display unit 7210 with a finger or a dedicated pen. In addition to the input display, the display unit 7210 can also display other images. The display unit 7203 may also be a touch panel. The two screens are connected by a hinge, which prevents problems such as scratching or damaging the screens when storing or transporting the device.

[0325] Figure 12C shows an example of a mobile terminal. The mobile phone includes a display unit 7402 incorporated into the housing 7401, as well as operation buttons 7403, an external connection port 7404, a speaker 7405, a microphone 7406, and the like. The mobile phone has a display unit 7402 which is made by arranging organic EL devices, which were made using the organic EL device manufacturing method described in Embodiments 2 and 3, in a matrix.

[0326] The mobile terminal shown in Figure 12C can also be configured to allow information input by touching the display unit 7402 with a finger or other object. In this case, operations such as making a phone call or composing an email can be performed by touching the display unit 7402 with a finger or other object.

[0327] The display unit 7402 has three main modes. The first is a display mode that primarily displays images, the second is an input mode that primarily inputs information such as text, and the third is a display + input mode that combines the display mode and the input mode.

[0328] For example, when making a phone call or composing an email, the display unit 7402 should be set to a text input mode, which primarily focuses on text input, and the user should perform the text input operation displayed on the screen. In this case, it is preferable to display a keyboard or number buttons on most of the screen of the display unit 7402.

[0329] Furthermore, by providing a detection device with a tilt sensor such as a gyroscope or accelerometer inside the mobile terminal, the orientation of the mobile terminal (portrait or landscape) can be determined, and the screen display of the display unit 7402 can be automatically switched accordingly.

[0330] Furthermore, the screen mode can be switched by touching the display unit 7402 or by operating the operation button 7403 on the housing 7401. It is also possible to switch modes depending on the type of image displayed on the display unit 7402. For example, if the image signal displayed on the display unit is video data, it can be switched to display mode; if it is text data, it can be switched to input mode.

[0331] Furthermore, in input mode, the system may detect a signal detected by the optical sensor of the display unit 7402 and, if there is no input via touch operation on the display unit 7402 for a certain period of time, control may be made to switch the screen mode from input mode to display mode.

[0332] The display unit 7402 can also function as an image sensor. For example, by touching the display unit 7402 with the palm or fingers, palm prints, fingerprints, etc., can be captured to perform user authentication. Furthermore, by using a backlight that emits near-infrared light or a sensing light source that emits near-infrared light in the display unit, it is also possible to capture images of finger veins, palm veins, etc.

[0333] As described above, the application range of a light-emitting device equipped with an organic EL device fabricated using the method for fabricating organic EL devices described in Embodiments 2 and 3 is extremely broad, and this light-emitting device can be applied to electronic devices in all fields.

[0334] Figure 13A is a schematic diagram showing an example of a cleaning robot.

[0335] The cleaning robot 5100 has a display 5101 on its top surface, multiple cameras 5102 on its sides, a brush 5103, and control buttons 5104. Although not shown in the illustration, the cleaning robot 5100 also has wheels, a suction port, etc. on its underside. The cleaning robot 5100 is also equipped with various sensors, including an infrared sensor, an ultrasonic sensor, an accelerometer, a piezoelectric sensor, a light sensor, and a gyroscope. Furthermore, the cleaning robot 5100 is equipped with a means of wireless communication.

[0336] The cleaning robot 5100 is self-propelled, can detect dirt 5120, and can suck up the dirt through a suction port located on its underside.

[0337] Furthermore, the cleaning robot 5100 can analyze images captured by the camera 5102 to determine the presence or absence of obstacles such as walls, furniture, or steps. If the image analysis detects objects that could become entangled in the brush 5103, such as wiring, it can stop the brush 5103 from rotating.

[0338] The display 5101 can display information such as the remaining battery level and the amount of dirt collected. The path taken by the cleaning robot 5100 may also be displayed on the display 5101. Alternatively, the display 5101 may be a touch panel, and operation buttons 5104 may be provided on the display 5101.

[0339] The cleaning robot 5100 can communicate with a portable electronic device 5140, such as a smartphone. Images captured by the camera 5102 can be displayed on the portable electronic device 5140. Therefore, the owner of the cleaning robot 5100 can check the status of the room even when they are away from home. In addition, the display on the display 5101 can be checked on a portable electronic device such as a smartphone.

[0340] A light-emitting device according to one aspect of the present invention can be used in a display 5101.

[0341] The robot 2100 shown in Figure 13B includes a computing unit 2110, an illuminance sensor 2101, a microphone 2102, an upper camera 2103, a speaker 2104, a display 2105, a lower camera 2106, an obstacle sensor 2107, and a movement mechanism 2108.

[0342] The microphone 2102 has the function of detecting the user's voice and ambient sounds. The speaker 2104 has the function of emitting sound. The robot 2100 can communicate with the user using the microphone 2102 and speaker 2104.

[0343] The display 2105 has the function of displaying various types of information. The robot 2100 can display the information desired by the user on the display 2105. The display 2105 may be equipped with a touch panel. The display 2105 may also be a detachable information terminal, and by installing it in a fixed position on the robot 2100, charging and data transfer can be made possible.

[0344] The upper camera 2103 and the lower camera 2106 have the function of imaging the area around the robot 2100. In addition, the obstacle sensor 2107 can detect the presence or absence of obstacles in the direction of travel when the robot 2100 moves forward using the movement mechanism 2108. The robot 2100 can recognize its surrounding environment and move safely using the upper camera 2103, the lower camera 2106 and the obstacle sensor 2107. The light-emitting device according to one aspect of the present invention can be used in the display 2105.

[0345] Figure 13C shows an example of a goggle-type display. The goggle-type display includes, for example, a housing 5000, a display unit 5001, a speaker 5003, an LED lamp 5004, a connection terminal 5006, a sensor 5007 (including functions for measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation), a microphone 5008, a second display unit 5002, a support unit 5012, an earphone 5013, etc.

[0346] A light-emitting device according to one aspect of the present invention can be used in a display unit 5001 and a second display unit 5002.

[0347] Organic EL devices manufactured using the methods for manufacturing organic EL devices described in Embodiments 2 and 3 can be mounted on the windshield and dashboard of an automobile. Figure 14 shows one embodiment in which an organic EL device manufactured using the methods for manufacturing organic EL devices described in Embodiments 2 and 3 is used on the windshield and dashboard of an automobile. Display areas 5200 to 5203 are display areas provided using an organic EL device manufactured using the methods for manufacturing organic EL devices described in Embodiments 2 and 3.

[0348] Display areas 5200 and 5201 are display devices equipped with organic EL devices manufactured using the organic EL device manufacturing method described in Embodiments 2 and 3, which are installed on the windshield of an automobile. By manufacturing both the anode and cathode of the organic EL device manufactured using the organic EL device manufacturing method described in Embodiments 2 and 3 using light-transmitting electrodes, the display device can be made to be a so-called see-through display device, where the opposite side is visible. With a see-through display, it can be installed on the windshield of an automobile without obstructing the view. When providing transistors for driving, it is preferable to use light-transmitting transistors such as organic transistors made of organic semiconductor materials or transistors made of oxide semiconductors.

[0349] Display area 5202 is a display device equipped with an organic EL device manufactured using the organic EL device manufacturing method described in Embodiments 2 and 3, which is provided on the pillar portion. By displaying images from an imaging means provided on the vehicle body on display area 5202, the field of view obstructed by the pillar can be supplemented. Similarly, display area 5203 provided on the dashboard portion can compensate for blind spots and enhance safety by displaying images from an imaging means provided on the outside of the vehicle, which obstructs the field of view obstructed by the vehicle body. By displaying images in a way that supplements the parts that are not visible, safety checks can be performed more naturally and without discomfort.

[0350] Display area 5203 can also provide various other information, such as navigation information, speed, rotational speed, and air conditioning settings. The display items and layout can be changed as needed to suit the user's preferences. This information can also be provided in display areas 5200 to 5202. Furthermore, display areas 5200 to 5203 can also be used as lighting devices.

[0351] Figures 15A and 15B also show a foldable portable information terminal 5150. The foldable portable information terminal 5150 has a housing 5151, a display area 5152, and a bending section 5153. Figure 15A shows the portable information terminal 5150 in its unfolded state. Figure 15B shows the portable information terminal in its folded state. Despite having a large display area 5152, the portable information terminal 5150 is compact and highly portable when folded.

[0352] The display area 5152 can be folded in half by the bending portion 5153. The bending portion 5153 is composed of an expandable member and a plurality of support members. When folded, the expandable member extends, and the bending portion 5153 folds to have a radius of curvature of 2 mm or more, preferably 3 mm or more.

[0353] The display area 5152 may also be a touch panel (input / output device) equipped with a touch sensor (input device). A light-emitting device according to one aspect of the present invention can be used in the display area 5152.

[0354] Figures 16A to 16C also show a foldable portable information terminal 9310. Figure 16A shows the portable information terminal 9310 in its unfolded state. Figure 16B shows the portable information terminal 9310 in an intermediate state, either unfolded or folded. Figure 16C shows the portable information terminal 9310 in its folded state. The portable information terminal 9310 offers excellent portability in its folded state and excellent readability of the display due to its seamless, wide display area in its unfolded state.

[0355] The display panel 9311 is supported by three housings 9315 connected by a hinge 9313. The display panel 9311 may also be a touch panel (input / output device) equipped with a touch sensor (input device). Furthermore, the display panel 9311 can be reversibly transformed from an unfolded state to a folded state by bending the two housings 9315 via the hinge 9313. A light-emitting device according to one aspect of the present invention can be used in the display panel 9311.

[0356] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., can be appropriately combined with other configuration examples or drawings, etc., at least in part.

[0357] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part. [Examples]

[0358] This embodiment presents the results of an investigation into the heat resistance of organic compounds used as electron transport layers in single films, heat resistance in multilayer films, and heat resistance when organometallic compounds, as shown by general formula (G1) or general formula (G2) in Embodiment 1, are stacked.

[0359] In this example, 2,9-di(2-naphthyl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen) and 2-{3-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}dibenzo[f,h]quinoxaline (abbreviated as 2mPCCzPDBq) were used as organic compounds for the electron transport layer of the EL layer, and tris(8-quinolinolato)aluminum (abbreviated as Alq3) was used as the organometallic compound represented by general formula (G1) or general formula (G2). NBPhen and 2mPCCzPDBq are organic semiconductor materials mainly used as electron transport layers in EL layers.

[0360] The molecular structures of NBPhen, 2mPCCzPDBq, and Alq3 are shown below.

[0361] [ka]

[0362] The composition of the samples used in the study is shown in the table below.

[0363] [Table 1]

[0364] These were fabricated by depositing films onto glass or quartz substrates using vapor deposition. Samples 5 to 7 are examples, and the others are comparative examples.

[0365] These single films and stacks were placed in bell jars set to a predetermined temperature, the pressure was reduced to approximately 10 hPa, and after maintaining the temperature for 1 hour, they were cooled to below 40°C and observed. The results of observation using an optical microscope are shown in Figures 17 to 23. The results of the assessment of the degree of crystallization are shown in the table below. In the table below, circles indicate no crystallization, triangles indicate partial crystallization, and crosses indicate overall crystallization.

[0366] [Table 2]

[0367] From the figures and tables, it was found that samples 1 and 2, namely NBPhen monolayers and 2mPCCzPDBq monolayers, did not crystallize up to 120°C, but partially crystallized above that temperature. Furthermore, it was found from sample 3 that Alq3 has heat resistance up to 150°C.

[0368] However, from Sample 4, it was found that NBPhen and 2mPCCzPDBq, which had heat resistance up to 120°C as single films, crystallized when heated above 80°C when formed into a multilayer film. Thus, it was found that when a multilayer film is formed, the heat resistance can change significantly regardless of the heat resistance of the individual materials.

[0369] On the other hand, in samples 5 to 7, although they have the same NBPhen and 2mPCCzPDBq layered structure as sample 4, the presence of an Alq3 protective layer on top allows the individual layers to achieve the same and even higher heat resistance.

[0370] The only difference between Samples 5 to 7 is the thickness of the Alq3 film. Therefore, a protective film thickness of 10 nm or more is preferable for improved heat resistance. Furthermore, since heat resistance does not change above a certain film thickness, a protective film thickness of 20 nm or less is preferable.

[0371] Thus, it has been found that by using the organometallic compound shown as general formula (G1) or general formula (G2) in Embodiment 1 as a protective film, the heat resistance of the organic semiconductor film formed beneath it can be greatly improved. Furthermore, the organometallic compound shown as general formula (G1) or general formula (G2) in Embodiment 1 can be easily removed with water or a water-based solvent. That is, it can be removed quickly as soon as the heating process is completed, and there is little damage to the underlying layer during removal. As a result, it is possible to increase the heat resistance temperature during the process without changing the configuration of the manufactured device, and therefore, one aspect of the present invention has been found to be a useful invention with a wide range of applications. [Explanation of symbols]

[0372] 100: Substrate, 101R: First electrode, 101C: Connecting electrode, 101G: First electrode, 101B: First electrode, 101: First electrode, 102: Second electrode, 103: EL layer, 107: Mask layer, 108: Insulating layer, 110R: Organic EL device, 110G: Organic EL device, 110B: Organic EL device, 111: Hole injection layer, 112: Hole transport layer, 113: Light-emitting layer, 114: Electron transport layer, 115: Electron injection layer, 120R: EL layer, 120Rb: EL film, 120G: EL layer, 120Gb: EL film, 120B: EL layer, 120Bb: EL film, 121: EL Layer, 125: insulating layer, 125b: insulating layer, 126: insulating layer, 126b: insulating layer, 130: connection part, 131: barrier layer, 143a: resist mask, 144a: mask film, 145: mask layer, 145a: mask layer, 145b: mask layer, 145c: mask layer, 146a: metal film or metal compound film, 147a: metal layer or metal compound layer, 148a: protective film, 149: protective layer, 149a: protective layer, 149b: protective layer, 149c: protective layer, 150: undercoat film, 151: organic semiconductor film, 151a: organic semiconductor layer, 152: protective layer, 152a: protective layer, 153: mask 601: Photomask layer, 153a: Mask layer, 154: Metal film or metal compound film, 154a: Metal layer or metal compound layer, 155: Resin film, 155a: Photomask layer, 160: Insulating layer, 161: Gate insulating layer, 162: Gate electrode, 165: First electrode, 166: Second electrode, 167: Photoelectric conversion layer, 168: Light-emitting layer, 450: Light-emitting device, 601: Source line driving circuit, 602: Pixel section, 603: Gate line driving circuit, 604: Encapsulation substrate, 605: Sealing material, 607: Space, 608: Wiring, 610: Element substrate, 611: Switching FET, 612: Current control FET, 613: First electrode, 614: Insulator, 616: EL layer, 617: Second electrode, 623: FET, 1001: Substrate, 1002: Underlying insulating film, 1003: Gate insulating film, 1006: Gate electrode, 1007: Gate electrode, 1008: Gate electrode, 1020: First interlayer insulating film, 1021: Second interlayer insulating film, 1022: Electrode, 1024B: First electrode, 1024G: First electrode, 1024R: First electrode, 1024W: First electrode, 1025: Partition, 1028: EL layer, 1029: Cathode, 1031: Encapsulating substrate, 1032: Sealing material, 1033: Base material,1034B: Coloring layer, 1034G: Coloring layer, 1034R: Coloring layer, 1035: Black matrix, 1036: Overcoat layer, 1037: Third interlayer insulating film, 1040: Pixel section, 1041: Drive circuit section, 1042: Peripheral section, 2100: Robot, 2101: Illuminance sensor, 2102: Microphone, 2103: Upper camera, 2104: Speaker, 2105: Display, 2106: Bottom 2107: Obstacle sensor, 2108: Moving mechanism, 2110: Processing unit, 5000: Enclosure, 5001: Display unit, 5002: Second display unit, 5003: Speaker, 5004: LED lamp, 5006: Connection terminal, 5007: Sensor, 5008: Microphone, 5012: Support unit, 5013: Earphone, 5100: Cleaning robot, 5101: Display, 5102: Camera, 510 3: Brush, 5104: Operation button, 5120: Dust, 5140: Portable electronic device, 5150: Portable information terminal, 5151: Housing, 5152: Display area, 5153: Bending part, 5200: Display area, 5201: Display area, 5202: Display area, 5203: Display area, 7101: Housing, 7103: Display unit, 7105: Stand, 7107: Display unit, 7109: Operation key, 7110: Remote control unit, 7201: Main unit, 7202: Chassis, 7203: Display unit, 7204: Keyboard, 7205: External connection port, 7206: Pointing device, 7210: Display unit, 7401: Chassis, 7402: Display unit, 7403: Operation buttons, 7404: External connection port, 7405: Speaker, 7406: Microphone, 9310: Personal digital assistant, 9311: Display panel, 9313: Hinge, 9315: Chassis,

Claims

1. The process involves forming an organic semiconductor layer on a first electrode, A step of forming a protective layer on the organic semiconductor layer containing an organometallic compound represented by the following general formula (G1), A step of applying heat of 100°C or higher to the organic semiconductor layer, A method for processing an organic semiconductor layer, comprising the step of removing the protective layer. 【Chemistry 1】 (However, in general formula (G1), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, X represents oxygen or sulfur, M represents a metal, and n represents an integer from 1 to 5, with the valency of metal M being the same as n. Note that when n is 2 or greater, multiple Ars may be the same or different, and X may be the same or different. When Ar is a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, the heteroatom of the heteroaryl group may be coordinately bonded to metal M.)

2. In claim 1, A method for processing an organic semiconductor layer, wherein water or a liquid with water as a solvent is used in the step of removing the aforementioned protective layer.

3. In claim 2, A method for processing an organic semiconductor layer, comprising the step of forming an aluminum oxide film on the protective layer.

4. In claim 3, After the step of forming the aluminum oxide film on the protective layer, Using the aforementioned aluminum oxide film, the organic semiconductor layer is processed, A method for processing an organic semiconductor layer, comprising removing the protective layer and the aluminum oxide film using water or a liquid with water as a solvent.

5. In claim 3 or claim 4, A method for processing an organic semiconductor layer, wherein the aluminum oxide film is formed by atomic deposition.

6. The process involves forming an organic semiconductor film on a first electrode, A step of forming a protective film on the organic semiconductor film containing an organometallic compound represented by the following general formula (G1), The steps include forming a first aluminum oxide film on the protective film, The process involves forming a metal film or a metal compound film on the first aluminum oxide film, A step of creating a photomask on the metal film or the metal compound film, A step of etching the metal film or metal compound film using the photomask to form a metal layer or metal compound layer that overlaps with the first electrode, The step of removing the aforementioned photomask, A step of etching the first aluminum oxide film, the protective film, and the organic semiconductor film using the metal layer or the metal compound layer as a mask to form the aluminum oxide layer, the protective layer, and the organic semiconductor layer, A step of removing the metal layer or the metal compound layer, A step of forming an organic resin film by covering the first electrode, the organic semiconductor layer, the protective layer, and the aluminum oxide layer, The process of forming an opening in the organic resin film that overlaps the first electrode, the organic semiconductor layer, the protective layer, and the aluminum oxide layer, The process includes removing the protective layer and the aluminum oxide layer that overlap the opening, A method for manufacturing an organic semiconductor device, comprising the step of applying heat of 100°C or higher to the organic semiconductor film or the organic semiconductor layer after forming the protective film and before removing the protective layer. 【Chemistry 2】 (However, in general formula (G1), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, X represents oxygen or sulfur, M represents a metal, and n represents an integer from 1 to 5, with the valency of metal M being the same as n. Note that when n is 2 or greater, multiple Ars may be the same or different, and X may be the same or different. When Ar is a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, the heteroatom of the heteroaryl group may be coordinately bonded to metal M.)

7. The process involves forming an organic semiconductor film on a first electrode, A step of forming a protective film on the organic semiconductor film containing an organometallic compound represented by the following general formula (G1), The steps include forming a first aluminum oxide film on the protective film, The process involves forming a metal film or a metal compound film on the first aluminum oxide film, A step of creating a photomask on the metal film or the metal compound film, A step of etching the metal film or metal compound film using the photomask to form a metal layer or metal compound layer that overlaps with the first electrode, The step of removing the aforementioned photomask, A step of etching the first aluminum oxide film, the protective film, and the organic semiconductor film using the metal layer or the metal compound layer as a mask to form the first aluminum oxide layer, the protective layer, and the organic semiconductor layer, A step of removing the metal layer or the metal compound layer, A step of forming a second aluminum oxide film by covering the first electrode, the organic semiconductor layer, the protective layer, and the first aluminum oxide layer, A step of forming an organic resin film by covering the first electrode, the organic semiconductor layer, the protective layer, the first aluminum oxide layer, and the second aluminum oxide film, The process of forming openings in the organic resin film that overlap the first electrode, the organic semiconductor layer, the protective layer, the first aluminum oxide layer, and the second aluminum oxide film, The process includes removing the protective layer, the first aluminum oxide layer, and the second aluminum oxide film that overlap the opening, A method for manufacturing an organic semiconductor device, comprising the step of applying heat of 100°C or higher to the organic semiconductor film or the organic semiconductor layer after forming the protective film and before removing the protective layer. 【Transformation 3】 (However, in general formula (G1), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, X represents oxygen or sulfur, M represents a metal, and n represents an integer from 1 to 5, with the valency of metal M being the same as n. Note that when n is 2 or greater, multiple Ars may be the same or different, and X may be the same or different. When Ar is a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, the heteroatom of the heteroaryl group may be coordinately bonded to metal M.)

8. In claim 7, A method for manufacturing an organic semiconductor device, comprising the step of removing the protective layer, the first aluminum oxide layer, and the second aluminum oxide film that overlap the opening, using water or a liquid with water as a solvent.

9. In claim 8, A method for manufacturing an organic semiconductor device, comprising using water or a water-based liquid as a solvent to remove the protective layer, the first aluminum oxide layer, and the second aluminum oxide film that overlap the opening, wherein water is used in the process.

10. In claim 9, A method for manufacturing an organic semiconductor device, comprising the step of removing part or all of the second aluminum oxide film and the first aluminum oxide layer using an alkaline solution or an acidic solution before the step of removing the protective layer and the first aluminum oxide layer overlapping the opening using water.

11. In any one of claims 7 to 10, A method for fabricating an organic semiconductor device, wherein the second aluminum oxide film is deposited by atomic layer deposition.

Images