Display device and display system

Abstract

Provided is a display device having a high degree of immersion or realism. The display device comprises a display unit capable of displaying, in full color, a communication unit having a wireless communication function, and a mounting unit that can be mounted on the head. The display unit has sub-pixels having a light emitting device and a coloration layer that transmits blue light. The light emitting device has a first light emitting material that emits blue light and a second light emitting material that emits light having a wavelength longer than blue light. The light emitting device has a first light emitting unit, a charge generation layer, and a second light emitting unit which are stacked in this order. When the intensity of a first light emission peak at a wavelength of 400 nm or more and less than 500 nm is set to 1 in a light emission spectrum when the display unit displays blue light at a low luminance, the intensity of a second light emission peak at a wavelength of 500 nm or more and 700 nm or less in the light emission spectrum is less than or equal to 0.5.

Description

Display device and display system

[0001] FIELD OF THE INVENTION An aspect of the present invention relates to a display device, an electronic device, and a display system.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the technical field of one embodiment of the present invention disclosed in this specification and the like include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices, input / output devices, driving methods thereof, and manufacturing methods thereof. A semiconductor device refers to any device that can function by utilizing semiconductor characteristics.

[0003] Wearable electronic devices that are equipped with display devices for augmented reality (AR) or virtual reality (VR) are becoming increasingly popular. Examples of wearable electronic devices include head-mounted displays (HMDs) and eyeglass-type electronic devices.

[0004] In electronic devices such as HMDs, where the display unit is close to the user, the user can easily see the pixels, which can cause a strong sense of graininess, which can diminish the immersive and realistic feel of AR or VR. For this reason, it is preferable to provide the HMD with a display device having fine pixels so that the pixels are not visible to the user. Patent Document 1 discloses a method for realizing an HMD with fine pixels by using transistors that can be driven at high speed.

[0005] Organic EL devices are sometimes used in AR or VR display devices or in the display section of HMDs. Non-Patent Document 1 discloses a method for manufacturing an organic optoelectronic device using standard UV photolithography as one type of organic EL device.

[0006] Japanese Patent Application Laid-Open No. 2000-2856

[0007] B. Lamprecht et al. , “Organic optoelectronic device fabrication using standard UV photolithography” phys. stat. sol. (RRL) 2, No. 1, p. 16-18 (2008)

[0008] By making the pixels of a display device finer, the pixel density can be increased. This allows for more pixels to be provided on the display device, resulting in a high sense of immersion or realism. To achieve a greater sense of immersion or realism, it is preferable to have fewer pixel defects (bright spots, dark spots, etc.).

[0009] Furthermore, there is a problem that if an HMD or the like that is worn on the head is heavy, it places a heavy burden on the user.

[0010] An object of one embodiment of the present invention is to provide a display device with a high sense of immersion or presence.An object of one embodiment of the present invention is to provide a display device or a display system that reduces a burden on a user.An object of one embodiment of the present invention is to provide a display device with high display quality.An object of one embodiment of the present invention is to provide a display device, a display method, a communication method, or a display system having a novel structure.

[0011] An object of one aspect of the present invention is to at least alleviate at least one of the problems of the prior art.

[0012] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these can be extracted from the description of the specification, drawings, claims, etc.

[0013] One embodiment of the present invention provides a display device including a display unit, a first communication unit, and a wearing unit. The wearing unit has a function of being worn on a head, and the first communication unit has a wireless communication function. The display unit is capable of full-color display. The display unit includes a first subpixel. The first subpixel includes a first light-emitting device and a first coloring layer that transmits blue light. The first light-emitting device includes a first pixel electrode, a first EL layer over the first pixel electrode, and a common electrode over the first EL layer. The first EL layer includes a first light-emitting material that emits blue light and a blue light-transmitting material. and a second light-emitting material that emits light of a longer wavelength than the color of the first light-emitting element, and the first EL layer has a first light-emitting unit on the first pixel electrode, a charge generation layer on the first light-emitting unit, and a second light-emitting unit on the charge generation layer, and when the display unit displays blue at a first luminance, the intensity of a first emission peak at a wavelength of 400 nm or more and less than 500 nm in the emission spectrum is set to 1, and the intensity of a second emission peak at a wavelength of 500 nm or more and less than 700 nm in the emission spectrum is 0.5 or less, and the first luminance is 0 cd / m ２ Higher than 1cd / m ２ The display device is a display device having a value less than or equal to

[0014] In the above display device, it is preferable that the display unit has a second subpixel, the second subpixel has a second light-emitting device and a second colored layer that transmits light of a color different from that of the first colored layer, the second light-emitting device has a second pixel electrode, a second EL layer on the second pixel electrode, and a common electrode on the second EL layer, and the first EL layer and the second EL layer have the same configuration, and the first EL layer and the second EL layer are separated from each other.

[0015] One embodiment of the present invention provides a display device including a display unit, a first communication unit, and a wearing unit. The wearing unit has a function of being worn on a head, and the first communication unit has a wireless communication function. The display unit is capable of full-color display. The display unit includes a first subpixel and a second subpixel. The first subpixel includes a first light-emitting device and a first colored layer that transmits blue light. The second subpixel includes a second light-emitting device and a second colored layer that transmits light of a color different from that of the first colored layer. The first light-emitting device includes a first pixel electrode, a first EL layer on the first pixel electrode, and a common electrode on the first EL layer. the second light-emitting device has a second pixel electrode, a first EL layer on the second pixel electrode, and a common electrode on the first EL layer; the first EL layer has a first light-emitting unit on the first pixel electrode, a charge generation layer on the first light-emitting unit, and a second light-emitting unit on the charge generation layer; and when the display unit displays blue at a first luminance, the intensity of a first emission peak at a wavelength of 400 nm or more and less than 500 nm in the emission spectrum is set to 1, and the intensity of a second emission peak at a wavelength of 500 nm or more and 700 nm or less in the emission spectrum is 0.5 or less; and the first luminance is 0 cd / m ２ Higher than 1cd / m ２ The display device is a display device having a value less than or equal to

[0016] One embodiment of the present invention provides a display device including a display unit, a first communication unit, and a wearing unit. The wearing unit has a function of being worn on a head, and the first communication unit has a wireless communication function. The display unit is capable of full-color display. The display unit has a first subpixel and a second subpixel. The first subpixel has a first light-emitting device and a first coloring layer that transmits blue light. The second subpixel has a second light-emitting device and a second coloring layer that transmits light of a color different from that of the first coloring layer. The first light-emitting device has a first pixel electrode, a first EL layer over the first pixel electrode, and a common electrode over the first EL layer. The second light-emitting device has a second pixel electrode and a second pixel electrode. a second EL layer on the pixel electrode and a common electrode on the second EL layer, the first EL layer and the second EL layer having the same configuration and being separated from each other, the first EL layer having a first light-emitting unit on the first pixel electrode, a charge generation layer on the first light-emitting unit, and a second light-emitting unit on the charge generation layer, and when the display unit displays blue at a first luminance, the intensity of a first emission peak at a wavelength of 400 nm or more and less than 500 nm in the emission spectrum is set to 1, and the intensity of a second emission peak at a wavelength of 500 nm or more and 700 nm or less in the emission spectrum is 0.5 or less, and the first luminance is 0 cd / m ２ Higher than 1cd / m ２ The display device is a display device having a value less than or equal to

[0017] The first light-emitting device has a common layer between the first EL layer and the common electrode, and the second light-emitting device has a common layer between the second EL layer and the common electrode, and the common layer preferably has at least one of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0018] It is preferable that the display portion has a first insulating layer, which covers the side surfaces of the first EL layer and the second EL layer, and the common electrode is located on the first insulating layer.

[0019] It is preferable that the display section has a second insulating layer, the first insulating layer has an inorganic material, and the second insulating layer has an organic material, and overlaps with the side surfaces of the first EL layer and the second EL layer via the first insulating layer.

[0020] The resolution of the display unit is preferably 1000 ppi or higher.

[0021] The first subpixel preferably includes a lens that overlaps the first light-emitting device and the first colored layer.

[0022] The first pixel electrode preferably comprises a material that reflects visible light.

[0023] Preferably, the first subpixel has a reflective layer, the first pixel electrode has a material that transmits visible light, and the first pixel electrode is located between the reflective layer and the first EL layer.

[0024] The end of the first pixel electrode preferably has a tapered shape.

[0025] The first EL layer preferably covers the edge of the first pixel electrode.

[0026] One aspect of the present invention is a display system having a server, a terminal, and any of the display devices having the above-mentioned configurations, wherein the terminal has a second communication unit and a third communication unit, the second communication unit having a function of communicating with the server via a network, and the third communication unit having a function of communicating with the first communication unit.

[0027] According to one aspect of the present invention, it is possible to provide a display device that provides a high sense of immersion or presence. Alternatively, it is possible to provide a display device or display system that reduces the burden on the user. Alternatively, it is possible to provide a display device with high display quality. Alternatively, it is possible to provide a display device, display method, communication method, or display system having a novel configuration. Alternatively, it is possible to at least alleviate at least one of the problems of the prior art.

[0028] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these can be extracted from the description in the specification, drawings, claims, etc.

[0029] FIG. 1 is a diagram illustrating an example of a configuration of a display system. FIGS. 2A and 2B are diagrams illustrating examples of content. FIG. 3 is a diagram illustrating an example of a configuration of a display system. FIGS. 4A to 4C are diagrams illustrating examples of configurations of a terminal and a display device. FIGS. 5A and 5B are diagrams illustrating examples of configurations of a terminal and a display device. FIG. 6A is a top view illustrating an example of a display panel. FIG. 6B is a cross-sectional view illustrating an example of a display panel. FIGS. 7A to 7D are cross-sectional views illustrating an example of a display panel. FIGS. 8A and 8B are cross-sectional views illustrating an example of a display panel. FIGS. 9A to 9C are cross-sectional views illustrating an example of a display panel. FIGS. 10A to 10C are cross-sectional views illustrating an example of a display panel. FIGS. 11A to 11E are cross-sectional views illustrating an example of a display panel. FIG. 12A is a top view illustrating an example of a display panel. FIG. 12B is a cross-sectional view illustrating an example of a display panel. FIGS. 13A to 13F are top views illustrating an example of a pixel. FIGS. 14A to 14H are top views illustrating an example of a pixel. 15A to 15J are top views showing an example of a pixel. FIGS. 16A to 16D are top views showing an example of a pixel. FIGS. 16E to 16G are cross-sectional views showing an example of a display panel. FIGS. 17A and 17B are perspective views showing an example of a display panel. FIGS. 18A and 18B are cross-sectional views showing an example of a display panel. FIGS. 19A and 19B are cross-sectional views showing an example of a display panel. FIG. 20 is a cross-sectional view showing an example of a display panel. FIG. 21 is a cross-sectional view showing an example of a display panel. FIG. 22 is a cross-sectional view showing an example of a display panel. FIG. 23 is a cross-sectional view showing an example of a display panel. FIG. 24 is a cross-sectional view showing an example of a display panel. FIG. 25 is a perspective view showing an example of a display panel. FIG. 26A is a cross-sectional view showing an example of a display panel. FIGS. 26B and 26C are cross-sectional views showing an example of a transistor. FIGS. 27A to 27D are cross-sectional views showing an example of a display panel. FIG. 28 is a cross-sectional view showing an example of a display panel. FIG. 29A is a block diagram showing an example of a display panel. 29B to 29D are diagrams showing an example of a pixel circuit, Fig. 30A to 30D are diagrams showing an example of a transistor, and Fig. 31A to 31F are diagrams showing an example of the configuration of a light-emitting device.32A to 32D are diagrams showing an example of an electronic device, 33A to 33F are diagrams showing an example of an electronic device, and 34A to 34G are diagrams showing an example of an electronic device.

[0030] Hereinafter, embodiments will be described with reference to the drawings. However, it will be readily understood by those skilled in the art that the embodiments can be implemented in many different ways and that various changes in form and details can be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the following description of the embodiments.

[0031] In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and repeated explanations thereof will be omitted. Furthermore, when referring to similar functions, the same hatching pattern may be used and no particular reference numeral may be assigned.

[0032] In the drawings described in this specification, the size of each component, the thickness of a layer, or an area may be exaggerated for clarity, and therefore, the drawings are not necessarily limited to the scale.

[0033] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components and do not limit the number.

[0034] In addition, in this specification and the like, a display device may be read as an electronic device.

[0035] In this specification, etc., a device fabricated using a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. Also, in this specification, etc., a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure.

[0036] Embodiment 1 In this embodiment, a structural example of a display system, a display device, or the like according to one embodiment of the present invention will be described.

[0037] A display system according to one embodiment of the present invention uses a wearable display device, such as a head-mounted display (HMD). Examples of display devices that can be used in the display system include non-transmissive display devices, such as goggle-type display devices, that present images while covering almost the entire field of view. Alternatively, a transmissive display device can be used, which displays an image superimposed on a real image viewed through a screen.

[0038] The display system uses a terminal device in addition to a wearable display device. The terminal device has a first communication unit for connecting to a server via a network. The terminal device further has a second communication unit for communicating with the wearable display device. With this configuration, the wearable display device does not need to communicate directly with the server, but only needs to perform short-range communication with the terminal device carried by the user, thereby simplifying the configuration. This allows the wearable display device to be made lighter, thereby reducing the burden on the user when wearing it.

[0039] The display panel of the wearable display device is a display panel that has a high aperture ratio, high definition, high resolution (a large number of pixels), and high color reproducibility.

[0040] The display panel has an aperture ratio (effective light-emitting area ratio) of 10% to 100%, preferably 20% to 95%, more preferably 30% to 93%, and even more preferably 40% to 90%. In particular, in a configuration in which the display unit is enlarged and viewed using a lens or the like, increasing the aperture ratio can make the graininess of pixels less visible and enhance the sense of immersion.

[0041] The higher the resolution of the display panel, the more preferable. For example, the resolution may be 500 ppi or more, preferably 800 ppi or more, more preferably 1000 ppi or more, even more preferably 2000 ppi or more, and even more preferably 3000 ppi or more, and may be 10000 ppi or less, 8000 ppi or less, or 6000 ppi or less. The higher the resolution, the more immersive the experience.

[0042] Furthermore, the higher the resolution of the display panel, the more preferable it is. For example, it is preferable for the display panel to have an extremely high resolution such as HD (effective pixel count 1280 x 720), FHD (effective pixel count 1920 x 1080), WQHD (effective pixel count 2560 x 1440), WQXGA (effective pixel count 2560 x 1600), 4K2K (effective pixel count 3840 x 2160), or 8K4K (effective pixel count 7680 x 4320). In particular, a resolution of 4K2K, 8K4K, or higher is preferable.

[0043] In the display panel of one embodiment of the present invention, when the display portion displays blue at a first luminance, the intensity of a first emission peak having a wavelength of 400 nm or more and less than 500 nm in the emission spectrum is set to 1, the intensity of a second emission peak having a wavelength of 500 nm or more and 700 nm or less in the emission spectrum is set to 0 or more and 0.5 or less, and the first luminance is set to 0 cd / m ２ Higher than 1cd / m ２ The value is less than 0.05. That is, when a display panel of one embodiment of the present invention displays blue light at low luminance, blue light is mainly observed, and light with a wavelength longer than blue is hardly observed (including a case where it is not substantially observed). A display panel with such a structure can achieve high display quality. For specific examples of the structure of the display panel, refer mainly to Embodiments 2 to 4.

[0044] A more specific example will be described below with reference to the drawings.

[0045] [Display System] Fig. 1 shows a schematic diagram of a display system 10. The display system 10 includes a server 11, a network 12, and terminals and display devices owned by users. The display system 10 according to one embodiment of the present invention allows multiple users in different locations to simultaneously experience the same content by simultaneously communicating with the server 11. Fig. 1 shows five users (users 20a to 20e).

[0046] In the following, when describing matters common to components distinguished by alphabets, such as users 20a to 20e, the components may be described using reference numerals without the alphabets.

[0047] The terminal 21 may be any of a variety of devices as long as it has the function of communicating with the server 11 via the network 12. For example, a mobile information terminal such as a smartphone, a tablet terminal, or a mobile phone may be used. The terminal 21 does not necessarily have to have a display unit.

[0048] The display device 22 has a function of communicating with the terminal device 21 wirelessly or via a wired connection and a function of being able to be worn on the head of the user 20. For example, an immersive (non-transparent) or transparent HMD can be used. The display device 22 can also be a goggle-type, eyeglass-type, or one-eye-mounted type.

[0049] User 20a has a terminal device 21a and a display device 22a. Terminal device 21a is in a pocket of user 20a's clothes. Terminal device 21a functions as, for example, a smartphone. User 20a also wears display device 22a. User 20b has terminal device 21b worn on his / her arm and display device 22b worn on his / her head. Terminal device 21b functions as a wristwatch-type information terminal. User 20c is sitting in a chair wearing display device 22c, with terminal device 21c placed on a table nearby. Terminal device 21c functions as a game console. User 20d carries terminal device 21d in a bag carried on his / her back and also wears display device 22d. Terminal device 21d functions as a tablet terminal. User 20e holds terminal device 21e in his / her hand and wears display device 22e.

[0050] A terminal 21 owned by a user 20 can communicate with the server 11 via the network 12. The server 11 has a function of providing some kind of processing in response to a request from a client. The server 11 can be configured with hardware such as a computer and software running on the hardware. Note that FIG. 1 shows the external appearance of a large computer as an example of the server 11. The server 11 may include a so-called supercomputer capable of large-scale computation in addition to large-scale storage.

[0051] As indicated by the dotted arrows, the terminal 21 and the display device 22 can communicate with each other. The terminal 21 can transmit video data and audio data supplied from the server 11 to the display device 22. Furthermore, the terminal 21 can transmit information input by the user 20 to the server 11 via the network 12.

[0052] The input information by the user 20 can be acquired by a sensor included in the terminal device 21 or the display device 22. Alternatively, an input device such as a controller, a stick, or a glove may be used separately from the terminal device 21 and the display device 22. Examples of the sensor include a camera, an acceleration sensor, and a touch sensor (including non-contact). Examples of the input information include touch operations (including non-contact), gesture operations using fingertips or arms, posture or movement of part or all of the body, number of steps, and location information.

[0053] The display system 10 does not necessarily require any equipment, and can be used anywhere that has access to the network 12, such as at home. Alternatively, the display system 10 may be available only within a limited facility, such as an amusement facility, entertainment facility, or game center.

[0054] [Example of Content] An example of content that the user 20 can enjoy on the display system 10 will be described.

[0055] FIG. 2A is an example of content for experiencing a roller coaster. FIG. 2A shows a situation in which multiple avatars 25 are riding on a roller coaster that is higher than the clouds. The image presented to the user 20 corresponds to the field of view of one of the multiple avatars 25, allowing the user 20 to experience an unrealistic situation as if they were riding on a roller coaster that is higher than the clouds. Multiple avatars 25 are riding on the roller coaster, and each avatar is associated with a different user 20.

[0056] The movement of the avatar 25 is preferably linked to the input information of the user 20. When the user 20 moves their line of sight, changes the angle of their head, or changes the direction of their body, the field of view and posture of the avatar 25 change in conjunction with that movement. Furthermore, when the user 20 raises their hand, the avatar 25 also raises their hand. Furthermore, when the user 20 speaks, the avatar 25 emits a sound in conjunction with this, which can be heard by other users 20 linked to other avatars 25. This allows the screams of other users 20 virtually riding the same roller coaster to be heard in real time, thereby enhancing the sense of realism.

[0057] FIG. 2B shows an example of shooting game content. FIG. 2B shows an example of competitive game content in which players control avatars 25 to destroy target objects 26 and compete for points. FIG. 2B shows a floating flying object and an unknown creature as examples of the object 26. The points (denoted as "Score") earned by each user 20 and the remaining time (denoted as "TIME") are displayed at the top of the image. Although FIG. 2B shows two avatars 25, three or more avatars 25 can also participate simultaneously. Furthermore, other avatars 25 may be used as targets instead of the object 26.

[0058] [System Configuration Example] A more specific configuration example of the display system 10 will be described below.

[0059] 3 is a block diagram showing the configuration of the display system 10. The display system 10 has a server 11, a network 12, one or more terminal devices 21, and one or more display devices 22 (display devices 22a to 22x). Here, an example is shown in which x (x is a natural number) terminal devices 21 (terminal devices 21a to 21x) are connected.

[0060] Terminal device 21 has a communication unit 31 for communicating with server 11 via network 12, and a communication unit 32 for communicating with display device 22. Display device 22 has a display unit 41 for displaying an image, and a communication unit 42 for communicating with terminal device 21.

[0061] When the communication unit 31 communicates wirelessly with the server 11 via the network 12, the communication unit 31 may be configured to have an antenna. Examples of the network 12, which is a communication means (communication method) between the communication unit 31 and the server 11, include computer networks such as the Internet, which is the foundation of the World Wide Web (WWW), an intranet, an extranet, a PAN (Personal Area Network), a LAN (Local Area Network), a CAN (Campus Area Network), a MAN (Metropolitan Area Network), a WAN (Wide Area Network), and a GAN (Global Area Network). When performing wireless communication, communication standards such as the third generation mobile communication system (3G), the fourth generation mobile communication system (4G), and the fifth generation mobile communication system (5G), or specifications standardized by the IEEE such as Wi-Fi (registered trademark) and Bluetooth (registered trademark), can be used as communication protocols or communication technologies.

[0062] The communication between the communication unit 32 and the communication unit 42 can use the same communication means as described above. Note that the communication between the communication unit 32 and the communication unit 42 is communication between devices that are relatively close to each other, and therefore does not necessarily require a large-scale network. For example, when enjoying the communication at home, a home network such as a PAN or LAN can be used. Also, a configuration in which communication is performed using a mutual communication function between two devices without using a network may be used. Also, the communication unit 32 and the communication unit 42 may communicate wired via a cable.

[0063] The display device 22 has either one or both of a function to display AR content and a function to display VR content on the display unit 41. Note that the display device 22 may also have a function to display Substitutional Reality (SR) or Mixed Reality (MR) content in addition to AR and VR. The display device 22 having a function to display at least one of AR, VR, SR, and MR content can enhance the user's sense of immersion.

[0064] [Specific Examples of Terminal and Display Device] FIGS. 4A to 4C show specific examples of a terminal and a display device.

[0065] 4A shows a terminal device 21A and a display device 22A. The terminal device 21A and the display device 22A each have a wireless communication function. The display device 22A has an area with a higher pixel density than the terminal device 21A. The display device 22A also has a function of displaying the screen of the terminal device 21A or a part of the screen of the terminal device 21A on the display device 22A using the wireless communication function.

[0066] As shown in FIG. 4A , a display system according to one embodiment of the present invention may use a display device as a terminal. That is, the display system may include multiple display devices. Furthermore, the multiple display devices may exchange data using wireless communication functions, and data from one display device may be partially processed, such as by upconversion or downconversion, and then displayed on another display device. Such a display system can improve user convenience, enable images to be displayed with optimal image quality on each display device, or reduce power consumption of the display devices.

[0067] Terminal device 21A includes a display unit 50, a housing 51, a communication unit 52, and a control unit 54. Here, communication unit 52 is configured to perform the functions of both communication unit 31 and communication unit 32. That is, communication unit 52 has both the function of communicating with server 11 via network 12 and the function of communicating with display device 22A. Note that FIG. 4A shows a user's right hand 70R. Display device 22A also includes a display unit 60, a housing 61, a communication unit 62, a mounting unit 63, a control unit 64, and a camera unit 65. Note that wireless communication can be performed between communication unit 52 and communication unit 62, as shown in FIG. 4A. Communication unit 52 has the function of transmitting information to display device 22A in response to operations on terminal device 21A. Communication unit 62 also has the function of transmitting information to terminal device 21A in response to operations on display device 22A.

[0068] The display device 22A is a goggle-type display device. The camera unit 65 of the display device 22A has a function of acquiring external information. For example, data acquired by the camera unit 65 can be output to the display unit 60 or the display unit 50 of the terminal device 21A. The attachment unit 63 of the display device 22A allows the user to wear the display device 22A on the head. Note that, although FIG. 4A illustrates an example in which the attachment unit 63 has a shape similar to the temples of glasses (also called joints or temples), the attachment unit 63 is not limited to this. The attachment unit 63 may have a helmet-type or band-type shape, for example, as long as it can be worn by the user.

[0069] The display device 22A has a function of outputting audio to the earphone 67. Here, an example is shown in which audio information is output to the earphone via wireless communication. However, this is not limiting, and the earphone 67 and the display device 22A may be connected by a cable, and audio information may be output via a wired connection.

[0070] Although an example having a camera unit 65 is shown here, a distance measuring sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object may be provided. That is, the camera unit 65 is one aspect of the detection unit. As the detection unit, for example, an image sensor or a distance image sensor such as a LIDAR (Light Detection and Ranging) can be used. By using an image obtained by the camera and an image obtained by the distance image sensor, more information can be obtained, enabling more accurate gesture operation.

[0071] Terminal device 21B shown in Fig. 4B has display unit 50, housing 51, communication unit 52, band 53, and control unit 54. Fig. 4B also shows a user's right hand 70R and a user's left hand 70L. The configuration of display device 22A shown in Fig. 4B is the same as the configuration shown in Fig. 4A, and therefore will not be described here.

[0072] The terminal 21A shown in FIG. 4A has the function of a so-called mobile information terminal (typically, a smartphone, etc.), and the terminal 21B shown in FIG. 4B has the function of a so-called watch-type mobile information terminal. The terminals 21A and 21B each have at least one or both of a call function and a time display function. The display device 22A also has one or both of a function to display AR content and a function to display VR content. The display device 22A may also have the function to display SR or MR content in addition to AR and VR. Having the display device 22A with the function to display at least one of AR, VR, SR, and MR content enhances the user's sense of immersion.

[0073] Terminal 21C shown in Fig. 4C functions as a game machine. Terminal 21C has at least a communication unit 52 and a control unit 54 inside housing 51. The configuration of display device 22A shown in Fig. 4C is the same as the configuration shown in Fig. 4A, and therefore will not be described here.

[0074] The terminal 21C includes a processor, storage, etc. A user can play various game contents by launching applications on the terminal 21C. The terminal 21C can also execute applications such as a video playback application, an image playback application, a music playback application, and an internet browser in addition to game contents. The terminal 21C can also be used as a personal computer.

[0075] Fig. 5A is a block diagram showing the configuration of terminal device 21 and display device 22. Terminal device 21 has display unit 50, communication unit 52, control unit 54, power supply unit 56, and sensor unit 58. Also, as shown in Fig. 5A, display device 22 has display unit 60, communication unit 62, control unit 64, power supply unit 66, and sensor unit 68.

[0076] 5A illustrates a configuration in which the terminal device 21 and the display device 22 have the same functions, but the present invention is not limited to this. For example, as shown in FIG. 5B, the terminal device 21 and the display device 22 may have different functions.

[0077] In FIG. 5B , terminal device 21 includes a camera unit 55 (also referred to as a detection unit) and a second communication unit 59 in addition to the configuration shown in FIG. 5A . Display device 22 also includes a camera unit 65 and a headphone unit 69 in addition to the configuration shown in FIG. 5A . Camera unit 55 may include an imaging unit such as an image sensor. Multiple cameras may be provided to accommodate multiple angles of view, such as telephoto and wide-angle. Second communication unit 59 may have a function for performing communication with communication unit 52. For example, communication unit 52 may have a function for communicating with communication unit 62, and second communication unit 59 may have a function for voice calls using a third-generation mobile communication system (3G), a fourth-generation mobile communication system (4G), a fifth-generation mobile communication system (5G), or the like, or a communication means for electronic payment, etc.

[0078] Furthermore, it is preferable that the display unit 60 has a higher resolution than the display unit 50. For example, the display unit 50 can have a resolution such as HD (1280 x 720 pixels), FHD (1920 x 1080 pixels), or WQHD (2560 x 1440 pixels). It is also preferable that the display unit 60 has an extremely high resolution such as WQXGA (2560 x 1600 pixels), 4K2K (3840 x 2160 pixels), or 8K4K (7680 x 4320 pixels). In particular, a resolution of 4K2K, 8K4K, or higher is preferable.

[0079] Furthermore, it is preferable that the display unit 60 has a higher pixel density (resolution) than the display unit 50. For example, the display unit 50 may have a pixel density of 100 ppi or more and less than 1000 ppi, preferably 300 ppi or more and 800 ppi or less. The display unit 60 may have a pixel density of 1000 ppi or more and 10000 ppi or less, preferably 2000 ppi or more and 8000 ppi or less, and more preferably 3000 ppi or more and 6000 ppi or less.

[0080] The aperture ratio (effective light-emitting area ratio) of each of the display units 50 and 60 is set to 10% or more and 100% or less, preferably 20% or more and 95% or less, more preferably 30% or more and 93% or less, and even more preferably 40% or more and 90% or less. In particular, since the display unit 60 is configured to be viewed by magnifying it with a lens or the like, increasing the aperture ratio makes it difficult to visually recognize the graininess of the pixels, thereby enhancing the sense of immersion.

[0081] The display portion 50 and the display portion 60 preferably have little color change between low luminance display and high luminance display. The display panel of one embodiment of the present invention is preferably used for one or both of the display portion 50 and the display portion 60. Specifically, when blue color is displayed at a first luminance, the display panel of one embodiment of the present invention has an emission spectrum in which, when the intensity of a first emission peak at a wavelength of 400 nm or more and less than 500 nm is set to 1, the intensity of a second emission peak at a wavelength of 500 nm or more and less than 700 nm in the emission spectrum is 0 or more and 0.5 or less, and the first luminance is 0 cd / m ２ Higher than 1cd / m ２ or less. That is, when the display panel of one embodiment of the present invention displays blue light at low luminance, blue light is mainly observed, and light with a wavelength longer than blue is hardly observed (including a case where it is not substantially observed). By using such a display panel for each of the display portions 50 and 60, high display quality can be achieved in the display portions 50 and 60.

[0082] There are no particular limitations on the screen ratio (aspect ratio) of the display unit 50 and the display unit 60. For example, the display unit 50 and the display unit 60 can each support various screen ratios such as 1:1 (square), 3:4, 16:9, and 16:10.

[0083] Note that the display unit 50 is preferably formed on a glass substrate, and the display unit 60 is preferably formed on a silicon substrate. Forming the display unit 50 on a glass substrate can reduce manufacturing costs. On the other hand, when the display unit 50 is formed on a glass substrate, it may be difficult to increase the pixel density of the display unit 50 (typically, 1000 ppi or more) due to the nature of a manufacturing apparatus. Therefore, in the display device and display system of one embodiment of the present invention, the display unit 60 is formed on a silicon substrate, which can increase the pixel density of the display unit 60 (typically, 1000 ppi or more). In other words, the display unit 60 can compensate for and display an image with a resolution that the display unit 50 cannot handle.

[0084] By increasing the resolution or definition of the display unit 60, the user is unable to recognize the pixels (e.g., they cannot see the lines that may occur between the pixels), and therefore can feel one or more of the following enhanced sensations: immersion, presence, and depth.

[0085] Furthermore, the terminal 21A has a period when the display unit does not display anything, and during this period, the terminal 21A can function as an input / output unit (e.g., a controller) of the display device 22. By having such a function, the usable life of the power supply unit 56 of the terminal 21A can be extended. That is, the display system according to one embodiment of the present invention can save power. Note that a lithium-ion secondary battery, for example, can be used as the power supply unit 56.

[0086] <Display Unit> The display units 50 and 60 each have a display function. For example, one or more selected from a liquid crystal display device, a light-emitting device including an organic EL device, and a light-emitting device including a light-emitting diode such as a micro LED can be used as the display units 50 and 60. In consideration of productivity and light-emitting efficiency, it is preferable to use a light-emitting device including an organic EL device as the display units 50 and 60.

[0087] <Communication Unit> The communication units 52 and 62 each have a function of communicating wirelessly or via a wire. If the communication units 52 and 62 have a function of communicating wirelessly, this is particularly preferable because it reduces the number of components such as cables for connection.

[0088] When the communication units 52 and 62 have a function of wireless communication, the communication units 52 and 62 can communicate via an antenna. Examples of communication means (communication methods) that the communication units 52 and 62 can use include computer networks such as the Internet, an intranet, an extranet, a PAN, a LAN, a CAN, a MAN, a WAN, and a GAN. When performing wireless communication, communication protocols or communication technologies that can be used include communication standards such as the third generation mobile communication system (3G), the fourth generation mobile communication system (4G), and the fifth generation mobile communication system (5G), or specifications standardized by the IEEE such as Wi-Fi (registered trademark) and Bluetooth (registered trademark).

[0089] <Control Unit> The control unit 54 and the control unit 64 each have a function of controlling the display unit. As the control unit 54 and the control unit 64, a calculation processing device such as a CPU (Central Processing Unit) or a GPU (Graphics Processing Unit) can be used.

[0090] <Power Supply Unit> The power supply units 56 and 66 each have the function of supplying power to the display unit. The power supply units 56 and 66 can be, for example, primary batteries or secondary batteries. Note that, for example, a lithium-ion secondary battery can be suitably used as the secondary battery.

[0091] <Sensor Unit> The sensor unit 58 and the sensor unit 68 each have a function of acquiring information from one or more of the user's senses of sight, hearing, touch, taste, and smell. More specifically, the sensor unit 58 has a function of measuring at least one of force, displacement, position, speed, acceleration, angular velocity, number of rotations, distance, light, magnetism, temperature, sound, time, electric field, current, voltage, power, radiation, humidity, gradient, vibration, odor, and infrared light.

[0092] Furthermore, in addition to the functions of the sensor unit 58, the sensor unit 68 preferably has a function of measuring brain waves. For example, it may have a plurality of electrodes that contact the head and a mechanism for measuring brain waves from a weak current flowing through the electrodes. By having the sensor unit 68 have the function of measuring brain waves, the image displayed on the display unit 50, or a portion of the image displayed on the display unit 50, can be displayed on the display unit 60 at a position desired by the user. In this case, the user does not need to use both hands to operate the display device, and can perform input operations, etc., without holding anything in their hands (keeping both hands free).

[0093] At least a part of the configuration examples exemplified in this embodiment and the corresponding drawings can be combined as appropriate with other configuration examples or drawings.

[0094] Embodiment 2 In this embodiment, a display panel according to one embodiment of the present invention will be described with reference to FIGS.

[0095] One embodiment of the present invention is a display panel having a display portion capable of full-color display. A subpixel emitting blue light in the display portion includes a light-emitting device and a colored layer transmitting blue light. The light-emitting device includes a pixel electrode, an EL layer over the pixel electrode, and a common electrode over the EL layer. The EL layer includes a light-emitting material emitting blue light and a light-emitting material emitting light with a wavelength longer than blue. The EL layer includes a first light-emitting unit over the pixel electrode, a charge generation layer over the first light-emitting unit, and a second light-emitting unit over the charge generation layer. That is, the display panel of one embodiment of the present invention uses a light-emitting device having a tandem structure including multiple light-emitting units. Note that the display portion capable of full-color display includes at least a subpixel emitting blue light and two or more subpixels emitting light of a color other than blue. Examples of blue light include light with a peak wavelength of 400 nm or more and less than 500 nm.

[0096] In the display panel of one embodiment of the present invention, when the display portion displays blue at a first luminance, the intensity of a first emission peak having a wavelength of 400 nm or more and less than 500 nm in the emission spectrum is set to 1, the intensity of a second emission peak having a wavelength of 500 nm or more and less than 700 nm in the emission spectrum is set to 0 or more and 0.5 or less, and the first luminance is 0 cd / m ２ Higher than 1cd / m ２ That is, when the display panel of one embodiment of the present invention displays blue light at low luminance, blue light is mainly observed, and light with a wavelength longer than blue is hardly observed (including a case where it is not substantially observed).

[0097] In a light-emitting device with a single structure (a structure having only one light-emitting unit) having multiple light-emitting layers, it is difficult to adjust the carrier balance, and the emission color may change between low and high luminance. On the other hand, in a light-emitting device with a tandem structure, it is easier to adjust the carrier balance than in a light-emitting device with a single structure, and the emission color is less likely to change between low and high luminance. Therefore, the display panel of one embodiment of the present invention has little color change between low and high luminance displays, and can achieve high display quality.

[0098] In a display panel according to one embodiment of the present invention, each subpixel includes a light-emitting device having an EL layer with the same structure and a coloring layer overlapping the light-emitting device, and a full-color display can be achieved by providing a coloring layer that transmits visible light of a different color depending on the subpixel.

[0099] When a light-emitting device having an EL layer with the same configuration is used for each subpixel, there is no need to separately paint the light-emitting layer for each subpixel. Therefore, layers other than the pixel electrode (e.g., the light-emitting layer) included in the light-emitting device can be shared (or, more precisely, shared) by multiple subpixels. However, some layers included in the light-emitting device have relatively high conductivity, and providing a highly conductive layer in common with multiple subpixels can cause leakage current between subpixels. In particular, as display panels become higher in resolution or aperture ratio and the distance between subpixels becomes smaller, the leakage current can become significant and may cause a deterioration in the display quality of the display panel. Therefore, in a display panel according to one embodiment of the present invention, at least a portion of the layers constituting the EL layer in each subpixel is formed in an island shape. By separating at least a portion of the layers constituting the EL layer for each subpixel, crosstalk between adjacent subpixels can be suppressed. This allows for both high resolution and high display quality of the display panel.

[0100] For example, island-shaped light-emitting layers can be formed by vacuum deposition using a metal mask. However, this method can result in deviations in the shape and position of the island-shaped light-emitting layers from the design due to various factors, such as the accuracy of the metal mask, misalignment between the metal mask and the substrate, deflection of the metal mask, and spreading of the contours of the formed film due to vapor scattering, making it difficult to achieve high-definition display panels and high aperture ratios. Furthermore, during deposition, the contours of the layer can become blurred, resulting in thinning of the edge portions. In other words, the thickness of the island-shaped light-emitting layer can vary depending on the location. Furthermore, when fabricating large, high-resolution, or high-definition display panels, there is a concern that low manufacturing yields may be caused by low dimensional accuracy of the metal mask and deformation due to heat, etc.

[0101] Therefore, when manufacturing a display panel according to one embodiment of the present invention, a pixel electrode is formed for each subpixel, and then a light-emitting layer is formed over the plurality of pixel electrodes. The light-emitting layer is then processed by, for example, photolithography to form one island-shaped light-emitting layer for each pixel electrode. This allows the light-emitting layer to be divided into subpixels, and an island-shaped light-emitting layer can be formed for each subpixel.

[0102] When the light-emitting layer is processed into an island shape, a structure in which the light-emitting layer is processed directly above the light-emitting layer using photolithography is conceivable. In such a structure, the light-emitting layer may be damaged (e.g., damaged by processing), resulting in a significant loss of reliability. Therefore, when manufacturing a display panel according to one embodiment of the present invention, it is preferable to form a sacrificial layer (which may also be referred to as a mask layer) or the like on a layer located above the light-emitting layer (e.g., a carrier transport layer or a carrier injection layer, more specifically, an electron transport layer or an electron injection layer), and then process the light-emitting layer into an island shape. By applying this method, a highly reliable display panel can be provided.

[0103] As described above, the island-shaped light-emitting layer manufactured by the method for manufacturing a display panel according to one embodiment of the present invention is not formed using a metal mask having a fine pattern, but is formed by forming a light-emitting layer over the entire surface and then processing it. Specifically, the island-shaped light-emitting layer has a size that is divided and miniaturized by using a photolithography method or the like. Therefore, the size can be made smaller than that formed using a metal mask. Therefore, a high-definition display panel or a display panel with a high aperture ratio, which has been difficult to achieve until now, can be realized.

[0104] In the manufacturing method of a display panel according to one embodiment of the present invention, the number of times of processing the light-emitting layer by photolithography can be reduced to one, which is preferable because it can reduce manufacturing costs and improve manufacturing yield.

[0105] While it is difficult to achieve a spacing of less than 10 μm between adjacent light-emitting devices using, for example, a metal mask, the above-described method can narrow the spacing to less than 10 μm, 5 μm or less, 3 μm or less, 2 μm or less, or even 1 μm or less. Furthermore, by using, for example, an exposure device for LSIs, the spacing between adjacent light-emitting devices can be narrowed to 500 nm or less, 200 nm or less, 100 nm or less, or even 50 nm or less. This significantly reduces the area of ​​the non-light-emitting region that may exist between two light-emitting devices, enabling the aperture ratio to approach 100%. For example, the aperture ratio can be 50% or more, 60% or more, 70% or more, 80% or more, or even 90% or more, and even less than 100%.

[0106] Furthermore, the pattern of the light-emitting layer itself (also known as the processing size) can be made much smaller than when a metal mask is used. Furthermore, for example, when a metal mask is used to separately fabricate light-emitting layers, thickness variations occur between the center and edges of the light-emitting layer, resulting in a smaller effective area that can be used as a light-emitting region relative to the area of ​​the light-emitting layer. On the other hand, the above-described fabrication method processes a film formed to a uniform thickness, allowing island-shaped light-emitting layers to be formed with a uniform thickness. Therefore, even with a fine pattern, almost the entire area can be used as a light-emitting region. This allows the fabrication of a display panel that combines high definition and a high aperture ratio.

[0107] In addition, in a manufacturing method of a display panel according to one embodiment of the present invention, it is preferable to form a layer including a light-emitting layer (which can be referred to as an EL layer or a part of an EL layer) over the entire surface, and then form a sacrificial layer over the EL layer. Then, it is preferable to form a resist mask over the sacrificial layer and process the EL layer and the sacrificial layer using the resist mask to form an island-shaped EL layer.

[0108] By providing a sacrificial layer over the EL layer, damage to the EL layer during the manufacturing process of the display panel can be reduced, and the reliability of the light-emitting device can be improved.

[0109] The island-shaped EL layer includes at least a light-emitting layer and preferably includes multiple layers. Specifically, it is preferable to have one or more layers on the light-emitting layer. By providing another layer between the light-emitting layer and the sacrificial layer, it is possible to prevent the light-emitting layer from being exposed to the outermost surface during the manufacturing process of the display panel, thereby reducing damage to the light-emitting layer. This improves the reliability of the light-emitting device. Therefore, it is preferable that each island-shaped EL layer includes a light-emitting layer and a carrier transport layer (electron transport layer or hole transport layer) on the light-emitting layer.

[0110] In a light-emitting device, all layers constituting the EL layer do not need to be formed in an island shape, and some layers can be provided in common (shared) among a plurality of light-emitting devices. Here, examples of layers included in the EL layer include a light-emitting layer, a carrier injection layer (a hole injection layer and an electron injection layer), a carrier transport layer (a hole transport layer and an electron transport layer), and a carrier blocking layer (a hole blocking layer and an electron blocking layer). In a method for manufacturing a display panel according to one embodiment of the present invention, after some layers constituting the EL layer are formed in an island shape for each subpixel, at least a part of the sacrificial layer is removed, and the remaining layers constituting the EL layer (e.g., a carrier injection layer) and a common electrode (which can also be referred to as an upper electrode) can be formed in common among a plurality of light-emitting devices.

[0111] In this specification and the like, holes or electrons may be referred to as "carriers." Specifically, a hole injection layer or an electron injection layer may be referred to as a "carrier injection layer," a hole transport layer or an electron transport layer may be referred to as a "carrier transport layer," and a hole block layer or an electron block layer may be referred to as a "carrier block layer." Note that the above-mentioned carrier injection layer, carrier transport layer, and carrier block layer may not be clearly distinguishable from each other depending on their cross-sectional shapes or characteristics. Furthermore, one layer may have two or three functions among the carrier injection layer, carrier transport layer, and carrier block layer.

[0112] On the other hand, the carrier injection layer is often a layer with relatively high conductivity among EL layers. Therefore, contact of the carrier injection layer with the side surface of the island-shaped EL layer or the side surface of the pixel electrode may cause a short circuit in the light-emitting device. Even when the carrier injection layer is provided in an island shape and a common electrode is formed in common with multiple light-emitting devices, contact of the common electrode with the side surface of the EL layer or the side surface of the pixel electrode may cause a short circuit in the light-emitting device.

[0113] Therefore, the display panel according to one embodiment of the present invention includes an insulating layer covering at least the side surfaces of the island-shaped light-emitting layers. Note that the side surfaces of the island-shaped light-emitting layers here refer to surfaces of the interfaces between the island-shaped light-emitting layers and other layers that are not parallel to the substrate (or the surface on which the light-emitting layers are formed). Furthermore, the side surfaces do not necessarily have to be either mathematically strictly flat or curved.

[0114] This prevents at least a portion of the island-shaped EL layer and the pixel electrode from coming into contact with the carrier injection layer or the common electrode, thereby preventing short circuits in the light-emitting device and improving the reliability of the light-emitting device.

[0115] The insulating layer preferably functions as a barrier insulating layer against at least one of water and oxygen, suppresses diffusion of at least one of water and oxygen, and captures or fixes (also referred to as gettering) at least one of water and oxygen.

[0116] In this specification and the like, a barrier insulating layer refers to an insulating layer having barrier properties. In addition, in this specification and the like, the barrier properties refer to a function of suppressing the diffusion of a corresponding substance (also referred to as low permeability) or a function of capturing or fixing (also referred to as gettering) a corresponding substance.

[0117] The use of an insulating layer having a function as a barrier insulating layer or a gettering function makes it possible to suppress the intrusion of impurities (typically, at least one of water and oxygen) that may diffuse into each light-emitting device from the outside, thereby providing a highly reliable light-emitting device and further a highly reliable display panel.

[0118] A display panel according to one embodiment of the present invention includes a pixel electrode, a first light-emitting unit over the pixel electrode, a charge generation layer (also referred to as an intermediate layer) over the first light-emitting unit, a second light-emitting unit over the charge generation layer, insulating layers provided so as to cover side surfaces of the first light-emitting unit, the charge generation layer, and the second light-emitting unit, and a common electrode provided over the second light-emitting unit. Note that a light-emitting device for each color may have a common layer between the second light-emitting unit and the common electrode.

[0119] Among EL layers, the hole injection layer, the electron injection layer, the charge generation layer, and the like often have relatively high conductivity. In the display panel of one embodiment of the present invention, the side surfaces of these layers are covered with insulating layers, which can prevent the layers from contacting a common electrode or the like. Therefore, short circuits in the light-emitting device can be prevented, and the reliability of the light-emitting device can be improved.

[0120] The insulating layer covering the side surfaces of the island-shaped EL layer may have a single layer structure or a multilayer structure.

[0121] For example, by forming an insulating layer having a single layer structure using an inorganic material, the insulating layer can be used as a protective insulating layer for an EL layer, thereby improving the reliability of the display panel.

[0122] Furthermore, when using insulating layers with a stacked structure, the first insulating layer is preferably formed using an inorganic insulating material because it is formed in contact with the EL layer. In particular, it is preferable to form the first insulating layer using atomic layer deposition (ALD), which causes less film damage during film formation. Alternatively, it is preferable to form the inorganic insulating layer using sputtering, chemical vapor deposition (CVD), or plasma enhanced chemical vapor deposition (PECVD), which have a faster film formation rate than ALD. This allows for the production of highly reliable display panels with high productivity. Furthermore, it is preferable to form the second insulating layer using an organic material so as to planarize the recesses formed in the first insulating layer.

[0123] For example, an aluminum oxide film formed by an ALD method can be used as the first insulating layer, and an organic resin film can be used as the second insulating layer.

[0124] If the side surface of the EL layer and the organic resin film are in direct contact, organic solvents contained in the organic resin film may damage the EL layer. By using an inorganic insulating film such as an aluminum oxide film formed by the ALD method as the first layer of the insulating layer, it is possible to prevent direct contact between the organic resin film and the side surface of the EL layer. This makes it possible to prevent the EL layer from being dissolved by an organic solvent.

[0125] In addition, in the display panel of one embodiment of the present invention, since there is no need to provide an insulating layer between the pixel electrode and the EL layer to cover the edge of the pixel electrode, the distance between adjacent light-emitting devices can be made extremely narrow. Therefore, the display panel can have high definition or high resolution. Furthermore, since a mask for forming the insulating layer is not required, the manufacturing cost of the display panel can be reduced.

[0126] Furthermore, by using a structure in which an insulating layer covering an edge of the pixel electrode is not provided between the pixel electrode and the EL layer, in other words, by using a structure in which an insulating layer is not provided between the pixel electrode and the EL layer, light from the EL layer can be efficiently extracted. Therefore, the display panel of one embodiment of the present invention can have extremely low viewing angle dependence. By reducing the viewing angle dependence, the visibility of images on the display panel can be improved. For example, in the display panel of one embodiment of the present invention, the viewing angle (the maximum angle at which a certain contrast ratio is maintained when the screen is viewed from an oblique direction) can be set to a range of 100° to less than 180°, preferably 150° to 170°. Note that the above viewing angle can be applied to both the vertical and horizontal directions.

[0127] Furthermore, the configuration for suppressing crosstalk is not limited to the configuration in which an island-shaped EL layer is formed for each light-emitting device. For example, crosstalk can also be suppressed by applying a configuration in which a region with a thin EL layer is formed between adjacent light-emitting devices. The presence of a region with a thin EL layer between adjacent light-emitting devices can suppress current flow outside the region of the EL layer that contacts the pixel electrode. Furthermore, the region of the EL layer that contacts the pixel electrode can be used mainly as the light-emitting region.

[0128] For example, the ratio T1 / T2 between the pixel electrode thickness T1 and the EL layer thickness T2 is preferably 0.5 or greater, more preferably 0.8 or greater, more preferably 1.0 or greater, and even more preferably 1.5 or greater. Furthermore, when a recess is provided in the insulating layer constituting the surface on which the pixel electrode is formed in the region between adjacent light-emitting devices (see, for example, the insulating layer 255c (FIG. 18A) described in the third embodiment below), the pixel electrode thickness T1 may be thin. Specifically, the ratio T3 / T2 between the sum of the pixel electrode thickness and the recess depth and the EL layer thickness T2 is preferably 0.5 or greater, more preferably 0.8 or greater, more preferably 1.0 or greater, and even more preferably 1.5 or greater. By satisfying the above relationship between T1 and T2 or T2 and T3, it becomes easy to form a thin EL layer region between adjacent light-emitting devices. Furthermore, the EL layer may be partially separated due to an extremely thin region in the EL layer.

[0129] Furthermore, it is preferable that the thickness T1 of the pixel electrode or the sum T3 be, for example, 160 nm or more, 200 nm or more, or 250 nm or more, and 1000 nm or less, 750 nm or less, 500 nm or less, 400 nm or less, or 300 nm or less.

[0130] Furthermore, the angle (also referred to as the taper angle) formed between the side surface of the pixel electrode and the substrate surface (or the surface on which the pixel electrode is formed) is preferably 60° to 140°, more preferably 70° to 140°, and even more preferably 80° to 140°. When the taper angle of the pixel electrode satisfies the above range, it becomes easy to form a region in which the EL layer is thin between adjacent light-emitting devices.

[0131] [Configuration Example 1 of Display Panel] FIGS. 6 and 7 illustrate a display panel according to one embodiment of the present invention.

[0132] FIG. 6A shows a top view of the display panel 100. The display panel 100 has a display section in which a plurality of pixels 110 are arranged, and a connection section 140 outside the display section. A plurality of sub-pixels are arranged in a matrix in the display section. FIG. 6A shows two rows and six columns of sub-pixels, which together form a two-row, two-column pixel. The connection section 140 can also be called a cathode contact section.

[0133] A stripe arrangement is applied to the pixel 110 shown in Fig. 6A. The pixel 110 shown in Fig. 6A is composed of three subpixels: a subpixel 110a, a subpixel 110b, and a subpixel 110c.

[0134] In this embodiment, a case will be described in which the subpixel 110a emits red light, the subpixel 110b emits green light, and the subpixel 110c emits blue light. Although the present embodiment will be described using an example of three subpixels of red (R), green (G), and blue (B), three subpixels of yellow (Y), cyan (C), and magenta (M) may also be used. The number of types of subpixels is not limited to three, and may be four or more. Examples of four subpixels include four subpixels of R, G, B, and white (W); four subpixels of R, G, B, and Y; and four subpixels of R, G, B, and infrared (IR).

[0135] The top surface shape of the sub-pixel shown in FIG. 6A corresponds to the top surface shape of the light-emitting region.

[0136] Furthermore, the circuit layout constituting the subpixels is not limited to the range of the subpixels shown in Fig. 6A and may be located outside of that range. For example, some or all of the transistors included in the subpixel 110a may be located outside the range of the subpixel 110a shown in Fig. 6A. For example, the transistor included in the subpixel 110a may have a portion located within the range of the subpixel 110b and a portion located within the range of the subpixel 110c.

[0137] 6A shows the subpixels 110a, 110b, and 110c as having the same or approximately the same aperture ratio (which can also be referred to as the size or the size of the light-emitting region), but this is not a limitation of one embodiment of the present invention. The aperture ratios of the subpixels 110a, 110b, and 110c can be determined as appropriate. The aperture ratios of the subpixels 110a, 110b, and 110c may be different from one another, or two or more of the subpixels 110a, 110b, and 110c may be the same or approximately the same.

[0138] In this specification and the like, the row direction may be referred to as the X direction, and the column direction may be referred to as the Y direction. The X direction and the Y direction intersect, for example, perpendicularly (see FIG. 6A ). FIG. 6A shows an example in which subpixels of different colors are arranged side by side in the X direction, and subpixels of the same color are arranged side by side in the Y direction.

[0139] 6A shows an example in which the connection unit 140 is located below the display unit when viewed from above, but this is not particularly limited. The connection unit 140 only needs to be located in at least one of the upper, right, left, and lower sides of the display unit when viewed from above, and may be located so as to surround all four sides of the display unit. The top surface shape of the connection unit 140 may be strip-shaped, L-shaped, U-shaped, frame-shaped, or the like. Furthermore, the connection unit 140 may be singular or plural.

[0140] Figures 6B, 7C, and 7D show cross-sectional views taken along dashed dotted line X1-X2 in Figure 6A, and Figures 7A and 7B show cross-sectional views taken along dashed dotted line Y1-Y2 in Figure 6A.

[0141] 8A, 8B, 9A to 9C, and 10A to 10C show a cross-sectional view taken along dashed dotted line X1-X2 and a cross-sectional view taken along dashed dotted line Y1-Y2 in FIG. 6A side by side.

[0142] 6B , in the display panel 100, an insulating layer is provided on the layer 101 including transistors, and light-emitting devices 130a, 130b, and 130c are provided on the insulating layer, with a protective layer 131 provided to cover these light-emitting devices. Colored layers 132R, 132G, and 132B are provided on the protective layer 131, and the substrate 120 is bonded to the insulating layer 131 by a resin layer 122. In addition, an insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided in the region between adjacent light-emitting devices.

[0143] 6B and other figures show multiple cross sections of the insulating layer 125 and the insulating layer 127, but when the display panel 100 is viewed from above, the insulating layer 125 and the insulating layer 127 are each connected to one another. That is, the display panel 100 can be configured to have, for example, one insulating layer 125 and one insulating layer 127. Note that the display panel 100 may have multiple insulating layers 125 that are separated from one another, or may have multiple insulating layers 127 that are separated from one another.

[0144] The display panel of one embodiment of the present invention may be a top-emission type that emits light in a direction opposite to the substrate on which the light-emitting device is formed, a bottom-emission type that emits light toward the substrate on which the light-emitting device is formed, or a dual-emission type that emits light to both sides.

[0145] The layer 101 including transistors can have, for example, a stacked structure in which a plurality of transistors are provided on a substrate and an insulating layer is provided to cover the transistors. The insulating layer over the transistors may have a single-layer structure or a stacked structure. Figure 6B and other figures show the insulating layers over the transistors, including an insulating layer 255a, an insulating layer 255b over the insulating layer 255a, and an insulating layer 255c over the insulating layer 255b. These insulating layers may have recesses between adjacent light-emitting devices. Figure 6B and other figures show an example in which a recess is provided in the insulating layer 255c. Note that the insulating layers over the transistors (insulating layers 255a to 255c) may be considered as part of the layer 101 including transistors.

[0146] The insulating layers 255a, 255b, and 255c can each be suitably formed using various inorganic insulating films such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, and a nitride oxide insulating film. The insulating layers 255a and 255c are preferably formed using an oxide insulating film or an oxynitride insulating film such as a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film. The insulating layer 255b is preferably formed using a nitride insulating film or a nitride oxide insulating film such as a silicon nitride film or a silicon nitride oxide film. More specifically, the insulating layers 255a and 255c are preferably formed using silicon oxide films, and the insulating layer 255b is preferably formed using a silicon nitride film. The insulating layer 255b preferably functions as an etching protective film.

[0147] In this specification and the like, an oxynitride refers to a material whose composition contains more oxygen than nitrogen, and a nitride oxide refers to a material whose composition contains more nitrogen than oxygen. For example, silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen, and silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen.

[0148] A structural example of the layer 101 including a transistor will be described later in Embodiment 4.

[0149] As the light-emitting device, for example, an OLED (organic light-emitting diode) or a QLED (quantum-dot light-emitting diode) is preferably used. Examples of the light-emitting substance (also referred to as a light-emitting material) included in the light-emitting device include a fluorescent substance (fluorescent material), a phosphorescent substance (phosphorescent material), and a substance exhibiting thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) material). Note that, as the TADF material, a material in thermal equilibrium between the singlet excited state and the triplet excited state may be used. Such a TADF material has a short emission lifetime (excitation lifetime), which can suppress a decrease in efficiency in the high-brightness region of the light-emitting device. Furthermore, an inorganic compound (for example, a quantum dot material) may be used as the light-emitting substance contained in the light-emitting device.

[0150] The light-emitting device has an EL layer between a pair of electrodes. The EL layer has at least a light-emitting layer. In this specification and the like, one of the pair of electrodes may be referred to as a pixel electrode and the other as a common electrode.

[0151] Of the pair of electrodes that a light-emitting device has, one electrode functions as an anode and the other electrode functions as a cathode. In the following, an example in which the pixel electrode functions as the anode and the common electrode functions as the cathode will be described.

[0152] The light-emitting device has a pixel electrode 111 on an insulating layer 255 c , an island-shaped EL layer 113 on the pixel electrode 111 , a common layer 114 on the EL layer 113 , and a common electrode 115 on the common layer 114 .

[0153] The edge of the pixel electrode 111 preferably has a tapered shape. When the edge of the pixel electrode 111 has a tapered shape, the EL layer 113 provided along the side surface of the pixel electrode 111 also has a tapered shape. By tapering the side surface of the pixel electrode 111, coverage of the EL layer 113 provided along the side surface of the pixel electrode 111 can be improved. Furthermore, by tapering the side surface of the pixel electrode 111, foreign matter (also referred to as dust or particles, for example) during the manufacturing process can be easily removed by a process such as cleaning, which is preferable.

[0154] In this specification and the like, the term "tapered shape" refers to a shape in which at least a part of a side surface of a structure is inclined with respect to a substrate surface or a surface to be formed. For example, it is preferable to have a region in which the angle (also referred to as the taper angle) between the inclined side surface and the substrate surface or the surface to be formed is less than 90°.

[0155] Each of the light-emitting devices 130 a, 130 b, and 130 c has an EL layer 113 and a common layer 114. The common layer 114 can also be considered to be a part of the EL layer of the light-emitting device. In this specification and the like, among the EL layers of the light-emitting devices, a layer provided in an island shape for each light-emitting device is referred to as the EL layer 113, and a layer shared by a plurality of light-emitting devices is referred to as the common layer 114.

[0156] The plurality of EL layers 113 are each provided in an island shape. The plurality of EL layers 113 can all have the same structure.

[0157] The EL layer 113 includes at least a light-emitting layer and may include one or more of a hole-injection layer, a hole-transport layer, a hole-blocking layer, a charge-generating layer, an electron-blocking layer, an electron-transporting layer, and an electron-injection layer.

[0158] For example, the EL layer 113 can have a light-emitting material that emits blue light and a light-emitting material that emits light with a wavelength longer than blue. For example, the EL layer 113 can have a structure including a light-emitting material that emits blue light and a light-emitting material that emits yellow light, or a structure including a light-emitting material that emits blue light, a light-emitting material that emits green light, and a light-emitting material that emits red light.

[0159] The EL layer 113 has a plurality of light-emitting units. In this embodiment, an example in which the EL layer 113 has two light-emitting units is shown. Specifically, the EL layer 113 has a first light-emitting unit 113 a, a charge generation layer 113 b (indicated by a dotted line), and a second light-emitting unit 113 c.

[0160] Each light-emitting unit has a light-emitting layer. For example, when the light emitted from the light-emitting units is of complementary colors, the light-emitting device can emit white light.

[0161] By applying a microcavity structure, which will be described later, a light-emitting device configured to emit white light may emit light with a specific color, such as red, green, or blue, enhanced.

[0162] The first light-emitting unit 113a and the second light-emitting unit 113c each include at least a light-emitting layer, and may also include one or more of a hole-injection layer, a hole-transport layer, a hole-blocking layer, an electron-blocking layer, an electron-transporting layer, and an electron-injection layer.

[0163] For example, the first light-emitting unit 113a may have a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer in this order. Alternatively, the first light-emitting unit 113a may have an electron blocking layer between the hole transport layer and the light-emitting layer. Alternatively, the first light-emitting unit 113a may have an electron injection layer on the electron transport layer.

[0164] For example, the first light-emitting unit 113a may include an electron injection layer, an electron transport layer, a light-emitting layer, and a hole transport layer in this order. Alternatively, the first light-emitting unit 113a may include a hole-blocking layer between the electron transport layer and the light-emitting layer. Alternatively, the first light-emitting unit 113a may include a hole-injection layer on the hole transport layer.

[0165] For example, the second light-emitting unit 113c may have a hole-transporting layer, a light-emitting layer, and an electron-transporting layer in this order. Alternatively, the second light-emitting unit 113c may have a hole-injecting layer between the charge-generating layer 113b and the hole-transporting layer. Alternatively, the second light-emitting unit 113c may have an electron-blocking layer between the hole-transporting layer and the light-emitting layer.

[0166] For example, the second light-emitting unit 113c may include an electron injection layer, an electron transport layer, an light-emitting layer, and a hole transport layer in this order. Alternatively, the second light-emitting unit 113c may include a hole-blocking layer between the electron transport layer and the light-emitting layer. Alternatively, the second light-emitting unit 113c may include a hole-injection layer on the hole transport layer.

[0167] The second light-emitting unit 113c preferably includes a light-emitting layer and a carrier transport layer (electron transport layer or hole transport layer) on the light-emitting layer. Since the surface of the second light-emitting unit 113c is exposed during the manufacturing process of the display panel, providing the carrier transport layer on the light-emitting layer can prevent the light-emitting layer from being exposed to the outermost surface and reduce damage to the light-emitting layer. This can improve the reliability of the light-emitting device.

[0168] The common layer 114 may include, for example, an electron injection layer or a hole injection layer. Alternatively, the common layer 114 may include a stack of an electron transport layer and an electron injection layer, or a stack of a hole transport layer and a hole injection layer. The common layer 114 is shared by the light-emitting devices 130 a, 130 b, and 130 c.

[0169] The light emitting device of the present embodiment has a tandem structure. In the present embodiment, an example in which the light emitting device has two light emitting units is shown, but the number of light emitting units in the light emitting device may be three or more.

[0170] The common electrode 115 is shared by the light-emitting devices 130 a, 130 b, and 130 c. The common electrode 115 shared by the plurality of light-emitting devices is electrically connected to a conductive layer 123 provided in the connection portion 140 (see FIGS. 7A and 7B ). The conductive layer 123 is preferably made of the same material and formed in the same process as the pixel electrode 111.

[0171] 7A shows an example in which a common layer 114 is provided on the conductive layer 123, and the conductive layer 123 and the common electrode 115 are electrically connected to each other via the common layer 114. Also, as shown in FIG. 7B , the common layer 114 does not need to be provided at the connection portion 140. In FIG. 7B , the conductive layer 123 and the common electrode 115 are directly connected to each other. For example, by using a mask (also called an area mask or a rough metal mask to distinguish it from a fine metal mask) for defining a film formation area, the regions where the common layer 114 and the common electrode 115 are formed can be different.

[0172] It is preferable that the light-emitting devices 130a, 130b, and 130c have a protective layer 131. The reliability of the light-emitting devices can be improved by providing the protective layer 131. The protective layer 131 may have a single-layer structure or a stacked structure of two or more layers.

[0173] There is no restriction on the conductivity of the protective layer 131. The protective layer 131 can be made of at least one of an insulating film, a semiconductor film, and a conductive film.

[0174] The protective layer 131 has an inorganic film, which can prevent oxidation of the common electrode 115, suppress impurities (moisture, oxygen, etc.) from entering the light-emitting device, and so on, thereby suppressing deterioration of the light-emitting device and improving the reliability of the display panel.

[0175] The protective layer 131 can be made of an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film. Examples of oxide insulating films include a silicon oxide film, an aluminum oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of nitride insulating films include a silicon nitride film and an aluminum nitride film. Examples of oxynitride insulating films include a silicon oxynitride film and an aluminum oxynitride film. Examples of nitride oxide insulating films include a silicon nitride oxide film and an aluminum nitride oxide film.

[0176] In particular, the protective layer 131 preferably includes an insulating nitride film or an insulating nitride oxide film, and more preferably includes an insulating nitride film.

[0177] Alternatively, an inorganic film containing In—Sn oxide (also referred to as ITO), In—Zn oxide, Ga—Zn oxide, Al—Zn oxide, indium gallium zinc oxide (In—Ga—Zn oxide, also referred to as IGZO), or the like can be used for the protective layer 131. The inorganic film preferably has high resistance, specifically, preferably has higher resistance than the common electrode 115. The inorganic film may further contain nitrogen.

[0178] When light emitted from the light-emitting device is extracted through the protective layer 131, it is preferable that the protective layer 131 has high transparency to visible light. For example, ITO, IGZO, and aluminum oxide are preferable because they are inorganic materials that have high transparency to visible light.

[0179] For example, a stacked structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a stacked structure of an aluminum oxide film and an IGZO film on the aluminum oxide film can be used as the protective layer 131. By using such a stacked structure, impurities (water, oxygen, etc.) can be prevented from entering the EL layer side.

[0180] Furthermore, the protective layer 131 may include an organic film. For example, the protective layer 131 may include both an organic film and an inorganic film.

[0181] The protective layer 131 may have a two-layer structure formed by using different film formation methods. Specifically, the first layer of the protective layer 131 may be formed by the ALD method, and the second layer of the protective layer 131 may be formed by the sputtering method.

[0182] In the subpixel 110a, a colored layer 132R that transmits red light is provided on the protective layer 131. As a result, light emitted from the light-emitting device 130a is extracted as red light to the outside of the display panel 100 through the colored layer 132R. Note that the colored layer 132R may be shared by a plurality of adjacent subpixels 110a. Alternatively, one colored layer 132R may be provided independently for each subpixel 110a.

[0183] Similarly, in the subpixel 110b, a colored layer 132G that transmits green light is provided on the protective layer 131. As a result, in the subpixel 110b, light emitted from the light-emitting device 130b is extracted as green light to the outside of the display panel 100 via the colored layer 132G.

[0184] In addition, in the subpixel 110c, a colored layer 132B that transmits blue light is provided on the protective layer 131. As a result, in the subpixel 110c, light emitted from the light-emitting device 130c is extracted as blue light to the outside of the display panel 100 via the colored layer 132B.

[0185] 6B and other figures show an example in which colored layers 132R, 132G, and 132B are provided directly on the light-emitting devices 130a, 130b, and 130c, with the protective layer 131 interposed therebetween. This configuration improves the accuracy of alignment between the light-emitting devices and the colored layers. Furthermore, by positioning the light-emitting devices and the colored layers closer to each other, color mixing can be suppressed and viewing angle characteristics can be improved, which is preferable.

[0186] 7C , the substrate 120 provided with the colored layers 132R, 132G, and 132B may be bonded to the protective layer 131 with a resin layer 122. By providing the colored layers 132R, 132G, and 132B on the substrate 120, the temperature of the heat treatment in the formation process of these layers can be increased.

[0187] 6B and other figures, no insulating layer covering the upper end of the pixel electrode 111 is provided between the pixel electrode 111 and the EL layer 113. This allows the distance between adjacent light-emitting devices to be extremely narrow, thereby enabling a high-definition or high-resolution display panel.

[0188] 6B and the like, the sacrificial layer 118 is located over the EL layer 113. In FIG. 6B , one end of the sacrificial layer 118 is aligned or approximately aligned with an end of the EL layer 113, and the other end of the sacrificial layer 118 is located over the EL layer 113. In this manner, in the display panel of one embodiment of the present invention, a part of the sacrificial layer used for protecting the EL layer 113 used in the manufacturing of the display panel may remain. The sacrificial layer 118 may remain, for example, between the EL layer 113 and the insulating layer 125 or the insulating layer 127.

[0189] The sacrificial layer may be made of one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, an inorganic insulating film, etc. The sacrificial layer may be made of any of various inorganic insulating films that can be used for the protective layer 131. The sacrificial layer may be made of inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide.

[0190] As shown in Figure 7D, one or both of the insulating layer 125 and the insulating layer 127 may cover a portion of the upper surface of the EL layer 113. By covering not only the side surfaces but also the upper surface of the EL layer 113 with one or both of the insulating layer 125 and the insulating layer 127, peeling of the EL layer 113 can be more effectively prevented, thereby improving the reliability of the light-emitting device. Furthermore, the manufacturing yield of the light-emitting device can be further improved. Figure 7D shows an example in which a stacked structure of the EL layer 113, the sacrificial layer 118, the insulating layer 125, and the insulating layer 127 is located on the edge of the pixel electrode 111.

[0191] The relationship between the widths of the pixel electrode and the EL layer is not particularly limited. Figure 6B and other figures show an example in which the end of the EL layer 113 is located outside the end of the pixel electrode 111. In Figure 6B and other figures, the EL layer 113 is formed so as to cover the end of the pixel electrode 111. This configuration can increase the aperture ratio compared to a configuration in which the end of the EL layer 113 is located inside the end of the pixel electrode 111.

[0192] Furthermore, by covering the side surfaces of the pixel electrode 111 with the EL layer 113, contact between the pixel electrode 111 and the common electrode 115 can be prevented, thereby preventing short circuits in the light-emitting device. Furthermore, the distance between the light-emitting region of the EL layer 113 (i.e., the region overlapping with the pixel electrode 111) and the edge of the EL layer 113 can be increased. The edge of the EL layer 113 includes a portion that may have been damaged during the manufacturing process of the display device. By not using this portion as the light-emitting region, it is possible to reduce variations in the characteristics of the light-emitting device and improve reliability.

[0193] 8A shows an example in which the edge of the upper surface of the pixel electrode 111 and the edge of the EL layer 113 are aligned or approximately aligned. Fig. 8A shows an example in which the edge of the EL layer 113 is located more inward than the edge of the lower surface of the pixel electrode 111. Fig. 8B shows an example in which the edge of the EL layer 113 is located more inward than the edge of the upper surface of the pixel electrode 111. In Figs. 8A and 8B, the edge of the EL layer 113 is located on the pixel electrode 111.

[0194] As shown in Figures 8A and 8B, when the end of the EL layer 113 is located on the pixel electrode 111, it is possible to prevent the thickness of the EL layer 113 from becoming thin at the end of the pixel electrode 111 and in its vicinity, and it is possible to make the thickness of the EL layer 113 uniform.

[0195] In addition, when the edges are aligned or approximately aligned, and when the top surface shapes are the same or approximately aligned, it can be said that at least a portion of the contours of the stacked layers overlap when viewed from above. For example, this includes cases where the upper and lower layers are processed using the same mask pattern or a portion of the same mask pattern. However, strictly speaking, the contours may not overlap, and the upper layer may be located inside the lower layer, or outside the lower layer. In these cases, it is also said that the edges are approximately aligned, or the top surface shapes are approximately aligned.

[0196] The end of the EL layer 113 may have both a portion located outside the end of the pixel electrode 111 and a portion located inside the end of the pixel electrode 111 .

[0197] 9A to 9C , an insulating layer 121 may be provided to cover the upper surface end of the pixel electrode 111. The EL layer 113 may have a portion in contact with the pixel electrode 111 and a portion in contact with the insulating layer 121. The insulating layer 121 may have a single-layer structure or a stacked-layer structure using one or both of an inorganic insulating film and an organic insulating film.

[0198] Examples of organic insulating materials that can be used for the insulating layer 121 include acrylic resins, epoxy resins, polyimide resins, polyamide resins, polyimideamide resins, polysiloxane resins, benzocyclobutene-based resins, and phenolic resins. In addition, examples of inorganic insulating films that can be used for the insulating layer 121 include the inorganic insulating films that can be used for the protective layer 131.

[0199] When an inorganic insulating film is used as the insulating layer 121, impurities are less likely to enter the light-emitting device than when an organic insulating film is used, thereby improving the reliability of the light-emitting device. Furthermore, the insulating layer 121 can be made thinner, making it easier to achieve higher definition. On the other hand, when an organic insulating film is used as the insulating layer 121, it has better step coverage and is less susceptible to the shape of the pixel electrode than when an inorganic insulating film is used. Therefore, short circuits in the light-emitting device can be prevented. Specifically, when an organic insulating film is used as the insulating layer 121, the shape of the insulating layer 121 can be processed into a tapered shape, etc.

[0200] Note that the insulating layer 121 does not necessarily have to be provided. By not providing the insulating layer 121, the aperture ratio of the sub-pixels can be increased in some cases. Alternatively, the distance between the sub-pixels can be narrowed in some cases, thereby improving the definition or resolution of the display panel.

[0201] 9A shows an example in which the common layer 114 penetrates into a region between two EL layers 113 on the insulating layer 121. As shown in FIG. 9B, a gap 135 may be formed in the region.

[0202] The void 135 contains, for example, one or more selected from air, nitrogen, oxygen, carbon dioxide, and Group 18 elements (typically, helium, neon, argon, xenon, krypton, etc.). Alternatively, a resin or the like may be embedded in the void 135.

[0203] As shown in FIG. 9C, an insulating layer 125 may be provided so as to cover the top surface of the insulating layer 121 and the side surfaces of the EL layer 113, and an insulating layer 127 may be provided over the insulating layer 125.

[0204] 6B , 7C , 7D , 8A , and 8B , the side surfaces of the pixel electrode 111 and the EL layer 113 are covered with the insulating layer 125 and the insulating layer 127. Also, in FIGS. 9A to 9C , the side surfaces of the pixel electrode 111 are covered with the insulating layer 121. Also, the side surfaces of the EL layer 113 shown in FIG. 9A are covered with the insulating layer 125, and the side surfaces of the EL layer shown in FIG. 9C are covered with the insulating layer 125 and the insulating layer 127. This prevents the common layer 114 (or the common electrode 115) from coming into contact with the side surfaces of the pixel electrode 111 and the EL layer 113, thereby preventing short circuits in the light-emitting device. This improves the reliability of the light-emitting device.

[0205] The insulating layer 125 preferably covers at least one of the side surfaces of the pixel electrode 111 and the EL layer 113, and more preferably covers both the side surfaces of the pixel electrode 111 and the EL layer 113. The insulating layer 125 can be configured to be in contact with each of the side surfaces of the pixel electrode 111 and the EL layer 113.

[0206] FIG. 6B and other figures show a configuration in which the EL layer 113 covers the edge of the pixel electrode 111 and the insulating layer 125 contacts the side surface of the EL layer 113 .

[0207] The insulating layer 127 is provided on the insulating layer 125 so as to fill the recesses of the insulating layer 125. The insulating layer 127 can be configured to overlap (or cover) the side surfaces of the EL layer 113 via the insulating layer 125. The insulating layer 127 may further overlap the side surfaces of the pixel electrodes 111 via the insulating layer 125.

[0208] By providing the insulating layers 125 and 127, the gaps between adjacent island-shaped layers can be filled, which reduces the unevenness of the surface on which layers (e.g., the carrier injection layer, the common electrode, etc.) are formed on the island-shaped layers, making the surface flatter. Therefore, the coverage of the carrier injection layer, the common electrode, etc. can be improved, and discontinuity of the common electrode can be prevented.

[0209] In this specification and the like, the term "step discontinuity" refers to a phenomenon in which a layer, film, or electrode is divided due to the shape of the surface on which it is formed (for example, a step or the like).

[0210] The common layer 114 and the common electrode 115 are provided over the EL layer 113, the insulating layer 125, and the insulating layer 127. Before the insulating layer 125 and the insulating layer 127 are provided, a step occurs between a region where the pixel electrode 111 and the EL layer 113 are provided and a region where the pixel electrode 111 and the EL layer 113 are not provided (a region between light-emitting devices). The display panel of one embodiment of the present invention includes the insulating layer 125 and the insulating layer 127, which can flatten the step and improve the coverage of the common layer 114 and the common electrode 115. Therefore, poor connection due to a step in the common electrode 115 can be suppressed. Furthermore, an increase in electrical resistance caused by a local thinning of the common electrode 115 due to the step can be suppressed.

[0211] In order to improve the flatness of the surfaces on which the common layer 114 and the common electrode 115 are formed, it is preferable that the heights of the upper surfaces of the insulating layers 125 and 127 are the same as or approximately the same as the height of the upper surfaces at the ends of the EL layer 113 (which can also be said to be the height of the ends of the upper surfaces). Furthermore, it is preferable that the upper surface of the insulating layer 127 has a flat shape, but it may have a convex portion, a convex curved surface, a concave curved surface, or a concave portion.

[0212] The insulating layer 125 or the insulating layer 127 can be provided so as to be in contact with the island-shaped EL layer 113. The insulating layer and the EL layer 113 are brought into close contact with each other, thereby achieving the effect of fixing or bonding the adjacent EL layers 113 by the insulating layer. This can prevent the EL layer 113 from peeling off, thereby improving the reliability of the light-emitting device. Furthermore, the manufacturing yield of the light-emitting device can be increased.

[0213] 10A, the display panel does not necessarily have to include the insulating layer 125 and the insulating layer 127. Fig. 10A shows an example in which the common layer 114 is provided in contact with the upper surface of the insulating layer 255c and the side and upper surfaces of the EL layer 113. As shown in Fig. 9B, a gap 135 may be provided between adjacent EL layers 113.

[0214] Note that either the insulating layer 125 or the insulating layer 127 does not necessarily have to be provided. For example, by forming the insulating layer 125 to have a single-layer structure using an inorganic material, the insulating layer 125 can be used as a protective insulating layer for the EL layer 113. This can improve the reliability of the display panel. Furthermore, by forming the insulating layer 127 to have a single-layer structure using an organic material, for example, the insulating layer 127 can fill the gap between adjacent EL layers 113 and achieve planarization. This can improve the coverage of the common electrode 115 (upper electrode) formed over the EL layer 113 and the insulating layer 127.

[0215] Fig. 10B shows an example in which no insulating layer 127 is provided. Note that Fig. 10B shows an example in which the common layer 114 enters the recess of the insulating layer 125, but a gap may be formed in that region.

[0216] The insulating layer 125 has a region in contact with the side surface of the EL layer 113 and functions as a protective insulating layer for the EL layer 113. By providing the insulating layer 125, impurities (oxygen, moisture, and the like) can be prevented from entering the EL layer 113 from the side surface thereof, thereby providing a highly reliable display panel.

[0217] 10C shows an example in which the insulating layer 125 is not provided. When the insulating layer 125 is not provided, the insulating layer 127 can be in contact with the side surface of the EL layer 113. The insulating layer 127 can be provided so as to fill the gaps between the EL layers 113 of the light-emitting devices.

[0218] In this case, it is preferable to use an organic material for the insulating layer 127 that causes less damage to the EL layer 113. For example, it is preferable to use an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinyl pyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin for the insulating layer 127.

[0219] Next, examples of materials and methods for forming the insulating layer 125 and the insulating layer 127 will be described.

[0220] The insulating layer 125 can be an insulating layer containing an inorganic material. For example, an inorganic insulating film such as an insulating oxide film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used for the insulating layer 125. The insulating layer 125 may have a single-layer structure or a stacked-layer structure. Examples of oxide insulating films include a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of nitride insulating films include a silicon nitride film and an aluminum nitride film. Examples of oxynitride insulating films include a silicon oxynitride film and an aluminum oxynitride film. Examples of nitride oxide insulating films include a silicon nitride oxide film and an aluminum nitride oxide film. In particular, aluminum oxide is preferable because it has a high etching selectivity with respect to the EL layer and has a function of protecting the EL layer in the formation of the insulating layer 127 described later. In particular, by using an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by an ALD method as the insulating layer 125, it is possible to form an insulating layer 125 with few pinholes and excellent protection of the EL layer. The insulating layer 125 may also have a stacked structure of a film formed by an ALD method and a film formed by a sputtering method. For example, the insulating layer 125 may have a stacked structure of an aluminum oxide film formed by an ALD method and a silicon nitride film formed by a sputtering method.

[0221] The insulating layer 125 preferably functions as a barrier insulating layer against at least one of water and oxygen. The insulating layer 125 preferably has a function of suppressing diffusion of at least one of water and oxygen. The insulating layer 125 preferably has a function of capturing or fixing (also referred to as gettering) at least one of water and oxygen.

[0222] The insulating layer 125 has a function as a barrier insulating layer or a gettering function, which can suppress the intrusion of impurities (typically, at least one of water and oxygen) that can diffuse into each light-emitting device from the outside. With this configuration, a highly reliable light-emitting device and further a highly reliable display panel can be provided.

[0223] The insulating layer 125 preferably has a low impurity concentration. This can prevent impurities from entering the EL layer from the insulating layer 125 and causing deterioration of the EL layer. Furthermore, a low impurity concentration in the insulating layer 125 can improve the barrier properties against at least one of water and oxygen. For example, it is desirable that the insulating layer 125 has a sufficiently low hydrogen concentration or a sufficiently low carbon concentration, or preferably both of them.

[0224] Examples of a method for forming the insulating layer 125 include a sputtering method, a CVD method, a pulsed laser deposition (PLD) method, and an ALD method. The insulating layer 125 is preferably formed by an ALD method, which has good coverage.

[0225] By increasing the substrate temperature during deposition of the insulating layer 125, the insulating layer 125 can be formed with a low impurity concentration and a high barrier property against at least one of water and oxygen, even if the insulating layer 125 is thin. Therefore, the substrate temperature is preferably 60° C. or higher, more preferably 80° C. or higher, more preferably 100° C. or higher, and still more preferably 120° C. or higher. On the other hand, since the insulating layer 125 is deposited after the island-shaped EL layer is formed, it is preferably formed at a temperature lower than the heat-resistant temperature of the EL layer. Therefore, the substrate temperature is preferably 200° C. or lower, more preferably 180° C. or lower, more preferably 160° C. or lower, more preferably 150° C. or lower, and still more preferably 140° C. or lower.

[0226] Examples of heat resistance temperature indicators include glass transition point, softening point, melting point, thermal decomposition temperature, and 5% weight loss temperature. The heat resistance temperature of the EL layer can be any of these temperatures, preferably the lowest of these temperatures. Furthermore, when the EL layer is composed of multiple layers, the lowest heat resistance temperature of each layer can be the heat resistance temperature of the EL layer. Furthermore, when one layer is a mixed layer composed of multiple materials, for example, the heat resistance temperature of the material contained in the largest amount, or the lowest heat resistance temperature of each material, can be the heat resistance temperature of the layer.

[0227] The insulating layer 125 is preferably formed to a thickness of, for example, 3 nm or more, 5 nm or more, or 10 nm or more, and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less.

[0228] The insulating layer 127 provided on the insulating layer 125 has the function of planarizing recesses in the insulating layer 125 formed between adjacent light-emitting devices. In other words, the insulating layer 127 improves the flatness of the surface on which the common electrode 115 is formed. An insulating layer containing an organic material can be suitably used as the insulating layer 127. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins can be used as the insulating layer 127. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can be used as the insulating layer 127. Alternatively, a photosensitive resin can be used as the insulating layer 127. Photoresist can be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0229] The insulating layer 127 may be made of a material that absorbs visible light. By having the insulating layer 127 absorb light emitted from the light-emitting device, it is possible to suppress leakage of light from the light-emitting device to an adjacent light-emitting device through the insulating layer 127 (stray light). This can improve the display quality of the display panel. Furthermore, since the display quality can be improved without using a polarizing plate in the display panel, it is possible to reduce the weight and thickness of the display panel.

[0230] Examples of materials that absorb visible light include materials containing pigments such as black, materials containing dyes, light-absorbing resin materials (e.g., polyimide), and resin materials that can be used for color filters (color filter materials). In particular, using a resin material in which two or more color filter materials are laminated or mixed is preferable because it can enhance the visible light blocking effect. In particular, mixing three or more color filter materials makes it possible to form a black or nearly black resin layer.

[0231] The insulating layer 127 can be formed using a wet film formation method such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, knife coating, etc. In particular, it is preferable to form the organic insulating film that becomes the insulating layer 127 by spin coating.

[0232] The insulating layer 127 is formed at a temperature lower than the heat resistance temperature of the EL layer 113. The substrate temperature when the insulating layer 127 is formed is typically 200° C. or lower, preferably 180° C. or lower, more preferably 160° C. or lower, more preferably 150° C. or lower, and more preferably 140° C. or lower.

[0233] 11A to 11E show the cross-sectional structure of a region 139 including the insulating layer 127 and its surroundings.

[0234] 11A , the upper surface of insulating layer 127 has a region that is higher than the upper surface of EL layer 113. As shown in Fig. 11A , the upper surface of insulating layer 127 can be configured to have a shape in which the center and its vicinity bulge in cross section, that is, a shape having a convex curved surface.

[0235] 11B , the upper surface of insulating layer 127 has a shape that gradually bulges toward the center, i.e., a convex curved surface, and a shape that is recessed in the center and its vicinity, i.e., a concave curved surface, in a cross-sectional view. Insulating layer 127 has an area that is higher than the upper surface of EL layer 113. In addition, in area 139, the display panel has a region where EL layer 113, sacrificial layer 118, insulating layer 125, and insulating layer 127 are stacked in this order.

[0236] 11C, the upper surface of insulating layer 127 has an area that is lower than the upper surface of EL layer 113. In addition, the upper surface of insulating layer 127 has a recessed shape in the center and its vicinity in cross-sectional view, that is, a shape having a concave curved surface.

[0237] 11D, the upper surface of the insulating layer 125 has a region higher than the upper surface of the EL layer 113. That is, the insulating layer 125 protrudes from the surface on which the common layer 114 is to be formed, forming a convex portion.

[0238] When forming the insulating layer 125, for example, if the insulating layer 125 is formed so that its height is aligned or approximately aligned with that of the sacrificial layer, the insulating layer 125 may be formed in a protruding shape as shown in FIG. 11D.

[0239] 11E, the upper surface of the insulating layer 125 has an area that is lower than the upper surface of the EL layer 113. That is, the insulating layer 125 forms a recess on the surface where the common layer 114 is to be formed.

[0240] In this way, the insulating layer 125 and the insulating layer 127 can be applied in various shapes.

[0241] A light-shielding layer may be provided on the surface of the substrate 120 facing the resin layer 122. Various optical members may be disposed on the outside of the substrate 120. Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-collecting film. Furthermore, a surface protection layer such as an anti-static film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches during use, or an impact absorbing layer may be disposed on the outside of the substrate 120. For example, a glass layer or a silica layer (SiO ｘThe surface protection layer can be preferably formed of a material such as DLC (diamond-like carbon), aluminum oxide (AlO ｘ ), polyester-based materials, or polycarbonate-based materials may also be used. Note that it is preferable to use a material with high transmittance to visible light for the surface protection layer. It is also preferable to use a material with high hardness for the surface protection layer.

[0242] The substrate 120 can be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, or the like. A material that transmits light is used for the substrate on the side from which light from the light-emitting device is extracted. Using a flexible material for the substrate 120 can increase the flexibility of the display panel. Alternatively, a polarizing plate may be used as the substrate 120.

[0243] The substrate 120 can be made of polyester resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. The substrate 120 can also be made of glass having a thickness sufficient to provide flexibility.

[0244] When a circularly polarizing plate is superimposed on a display panel, it is preferable that the substrate of the display panel has a high optical isotropy. A substrate with a high optical isotropy has a small birefringence (or a small amount of birefringence).

[0245] The absolute value of the retardation (phase difference) of a substrate having high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0246] Examples of films with high optical isotropy include triacetyl cellulose (TAC, also known as cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.

[0247] Furthermore, when a film is used as a substrate, the film may absorb water, causing deformation such as wrinkles in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferably 0.1% or less, and even more preferably 0.01% or less.

[0248] The resin layer 122 can be made of various curable adhesives, such as a photo-curable adhesive (e.g., an ultraviolet curable adhesive), a reactive curable adhesive, a thermosetting adhesive, or an anaerobic adhesive. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. Materials with low moisture permeability, such as epoxy resin, are particularly preferred. Two-component resins may also be used. Adhesive sheets or the like may also be used.

[0249] Materials that can be used for conductive layers such as the gate, source, and drain of a transistor, as well as various wirings and electrodes that constitute a display device include, for example, metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys containing these metals as the main component. A film containing one or more of these materials can be used as a single layer or a stacked structure.

[0250] Examples of light-transmitting conductive materials include conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metal materials, can be used. Alternatively, nitrides of such metal materials (e.g., titanium nitride) can be used. When using metal materials or alloy materials (or their nitrides), it is preferable to thin them sufficiently to ensure light-transmitting properties. A stacked film of the above materials can also be used as the conductive layer. For example, a stacked film of an alloy of silver and magnesium and indium tin oxide is preferable because it can enhance conductivity. These materials can also be used for conductive layers such as various wirings and electrodes constituting display devices, and conductive layers (conductive layers functioning as pixel electrodes or counter electrodes) in light-emitting devices.

[0251] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0252] As shown in FIG. 12A, a pixel can be configured to have four types of sub-pixels.

[0253] 12A shows a top view of the display panel 100. The display panel 100 has a display section in which a plurality of pixels 110 are arranged in a matrix, and a connection section 140 on the outside of the display section.

[0254] The pixel 110 shown in FIG. 2A is composed of four types of sub-pixels: sub-pixels 110a, 110b, 110c, and 110d.

[0255] The sub-pixels 110a, 110b, 110c, and 110d may each have a light-emitting device that emits light of a different color, such as sub-pixels of four colors R, G, B, and W, sub-pixels of four colors R, G, B, and Y, or sub-pixels of four colors R, G, B, and IR.

[0256] Furthermore, the display panel of one embodiment of the present invention may include a light-receiving device in a pixel.

[0257] Of the four sub-pixels included in pixel 110 shown in FIG. 12A, three may be configured to have a light-emitting device, and the remaining one may be configured to have a light-receiving device.

[0258] The light receiving device may be, for example, a pn-type or pin-type photodiode. The light receiving device functions as a photoelectric conversion device (also called a photoelectric conversion element) that detects light incident on the light receiving device and generates electric charges. The amount of electric charges generated by the light receiving device is determined based on the amount of light incident on the light receiving device.

[0259] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving device. Organic photodiodes can be easily made thin, lightweight, and large in area, and have a high degree of freedom in shape and design, making them applicable to a variety of display panels.

[0260] In one embodiment of the present invention, an organic EL device is used as the light-emitting device, and an organic photodiode is used as the light-receiving device. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, the organic photodiode can be built into a display panel using the organic EL device.

[0261] The light-receiving device has an active layer that functions as at least a photoelectric conversion layer between a pair of electrodes. In this specification and the like, one of the pair of electrodes may be referred to as a pixel electrode and the other as a common electrode.

[0262] Of the pair of electrodes that a light-receiving device has, one electrode functions as an anode and the other electrode functions as a cathode. The following describes an example in which the pixel electrode functions as the anode and the common electrode functions as the cathode. The light-receiving device can detect light incident on the light-receiving device, generate electric charges, and extract them as a current by applying a reverse bias between the pixel electrode and the common electrode. Alternatively, the pixel electrode may function as a cathode and the common electrode may function as an anode.

[0263] The same manufacturing method as for the light-emitting device can be applied to the light-receiving device. The island-shaped active layer (also called the photoelectric conversion layer) of the light-receiving device is formed by depositing a film to become the active layer on the entire surface and then processing it, rather than using a fine metal mask. This allows the island-shaped active layer to be formed with a uniform thickness. Furthermore, by providing a sacrificial layer on the active layer, damage to the active layer during the display panel manufacturing process can be reduced, thereby improving the reliability of the light-receiving device.

[0264] Fig. 12B shows a cross-sectional view taken along dashed dotted line X3-X4 in Fig. 12A. Note that Fig. 6B can be referred to for a cross-sectional view taken along dashed dotted line X1-X2 in Fig. 12A, and Fig. 7A or Fig. 7B can be referred to for a cross-sectional view taken along dashed dotted line Y1-Y2.

[0265] 12B , the display panel 100 has an insulating layer provided on a layer 101 including transistors, a light-emitting device 130a and a light-receiving device 150 provided on the insulating layer, and a protective layer 131 provided to cover the light-emitting device and the light-receiving device. A colored layer 132R is provided on the protective layer 131 at a position overlapping the light-emitting device 130a, and the substrate 120 is bonded to the protective layer 131 by a resin layer 122. In addition, an insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided in the region between the adjacent light-emitting device and light-receiving device.

[0266] FIG. 12B shows an example in which the light emitting device 130a emits light toward the substrate 120 side, and light is incident on the light receiving device 150 from the substrate 120 side (see light Lem and light Lin).

[0267] The configuration of the light-emitting device 130a is as described above.

[0268] The light receiving device 150 has a pixel electrode 111 on an insulating layer 255 c , a layer 155 including an island-shaped active layer on the pixel electrode 111 , a common layer 114 on the layer 155 , and a common electrode 115 on the common layer 114 .

[0269] The layer 155 including the active layer is provided in the light-receiving device 150 but not in the light-emitting device, while the common layer 114 is a continuous layer shared by the light-emitting device and the light-receiving device.

[0270] Here, a layer shared by a light-receiving device and a light-emitting device may have different functions in the light-emitting device and in the light-receiving device. In this specification, components may be referred to based on their functions in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device. Furthermore, a layer shared by a light-receiving device and a light-emitting device may have the same function in the light-emitting device and in the light-receiving device. A hole transport layer functions as a hole transport layer in both the light-emitting device and the light-receiving device, and an electron transport layer functions as an electron transport layer in both the light-emitting device and the light-receiving device.

[0271] A sacrificial layer 118a is located between the EL layer 113 and the insulating layer 125, and a sacrificial layer 118b is located between the layer 155 and the insulating layer 125. The sacrificial layer 118a is a remaining portion of the sacrificial layer provided on the EL layer 113 when the EL layer 113 is processed. The sacrificial layer 118b is a remaining portion of the sacrificial layer provided on the layer 155 including the active layer when the layer 155 is processed. The sacrificial layers 118a and 118b may be made of the same material or different materials.

[0272] In a display panel having a light-emitting device and a light-receiving device in each pixel, the pixel has a light-receiving function, so that it is possible to detect the contact or proximity of an object while displaying an image. For example, instead of displaying an image using all of the sub-pixels of the display panel, it is also possible for some of the sub-pixels to emit light as a light source, other sub-pixels to perform light detection, and the remaining sub-pixels to display an image.

[0273] A display panel of one embodiment of the present invention has light-emitting devices arranged in a matrix in a display portion, and can display an image on the display portion. Furthermore, light-receiving devices are arranged in a matrix in the display portion, and the display portion has one or both of an imaging function and a sensing function in addition to an image display function. The display portion can be used as an image sensor or a touch sensor. That is, by detecting light in the display portion, an image can be captured or the proximity or contact of an object (such as a finger, a hand, or a pen) can be detected. Furthermore, the display panel of one embodiment of the present invention can use a light-emitting device as a light source for a sensor. Therefore, a light-receiving unit and a light source are not required separately from the display panel, and the number of components in an electronic device can be reduced. For example, a fingerprint authentication device or a capacitive touch panel for scrolling or the like is not required separately in the electronic device. Therefore, by using the display panel of one embodiment of the present invention, an electronic device with reduced manufacturing costs can be provided.

[0274] In a display panel of one embodiment of the present invention, when light emitted from a light-emitting device included in a display area is reflected (or scattered) by an object, a light-receiving device can detect the reflected light (or scattered light), thereby enabling imaging or touch detection even in a dark place.

[0275] When the light receiving device is used as an image sensor, the display panel can capture an image using the light receiving device. For example, the display panel of the present embodiment can be used as a scanner.

[0276] For example, an image sensor can be used to acquire data related to biometric information such as fingerprints and palm prints. In other words, a biometric authentication sensor can be built into the display panel. By building a biometric authentication sensor into the display panel, the number of components in the electronic device can be reduced compared to when a biometric authentication sensor is provided separately from the display panel, making it possible to make the electronic device smaller and lighter.

[0277] Furthermore, when the light receiving device is used as a touch sensor, the display panel can detect the proximity or contact of an object using the light receiving device.

[0278] The display panel of one embodiment of the present invention can have one or both of an imaging function and a sensing function in addition to an image display function. In this way, the display panel of one embodiment of the present invention can be said to have a high affinity with functions other than the display function.

[0279] Next, materials that can be used in light-emitting devices will be described.

[0280] Of the pixel electrode and the common electrode, the electrode from which light is extracted is preferably made of a conductive film that transmits visible light. Furthermore, it is preferable that the electrode from which light is not extracted is made of a conductive film that reflects visible light. Furthermore, when the display panel has a light-emitting device that emits infrared light, it is preferable that the electrode from which light is extracted is made of a conductive film that transmits visible light and infrared light, and the electrode from which light is not extracted is made of a conductive film that reflects visible light and infrared light.

[0281] A conductive film that transmits visible light may also be used for the electrode on the side from which light is not extracted. In this case, it is preferable to place the electrode between the reflective layer and the EL layer. That is, the light emitted from the EL layer may be reflected by the reflective layer and extracted from the display panel.

[0282] The pair of electrodes (pixel electrode and common electrode) of the light-emitting device can be formed from a material such as a metal, an alloy, an electrically conductive compound, or a mixture thereof. Specific examples include indium tin oxide (In-Sn oxide, also referred to as ITO), In-Si-Sn oxide (also referred to as ITSO), indium zinc oxide (In-Zn oxide), In-W-Zn oxide, an aluminum-containing alloy (aluminum alloy) such as an alloy of aluminum, nickel, and lanthanum (Al-Ni-La), and an alloy of silver and magnesium, and an alloy of silver, palladium, and copper (Ag-Pd-Cu, also referred to as APC). Other examples of the metals that can be used include aluminum (Al), magnesium (Mg), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), and neodymium (Nd), as well as alloys containing appropriate combinations of these metals. Other examples of the metals that can be used include elements belonging to Group 1 or Group 2 of the periodic table (e.g., lithium (Li), cesium (Cs), calcium (Ca), and strontium (Sr)), rare earth metals such as europium (Eu), and ytterbium (Yb), as well as alloys containing appropriate combinations of these metals, graphene, and the like.

[0283] The light-emitting device preferably has a micro-optical resonator (microcavity) structure. Therefore, one of a pair of electrodes of the light-emitting device preferably has a transmissive and reflective electrode for visible light, and the other preferably has a reflective electrode for visible light. By having the light-emitting device have a microcavity structure, the light emitted from the light-emitting layer can be resonated between the two electrodes, thereby intensifying the light emitted from the light-emitting device.

[0284] The semi-transmitting / semi-reflective electrode can have a laminated structure of a reflective electrode and an electrode that is transparent to visible light (also called a transparent electrode).

[0285] The light transmittance of the transparent electrode is 40% or more. For example, it is preferable to use an electrode with a visible light (light with a wavelength of 400 nm or more and less than 750 nm) transmittance of 40% or more for a light-emitting device. The visible light reflectance of the semi-transparent / semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes is 1×10 −２ Preferably, it is Ωcm or less.

[0286] The pixel electrode and the common electrode can be formed by, for example, sputtering or vacuum deposition, or by laminating a film formed by deposition and a film formed by sputtering.

[0287] The light-emitting layer is a layer containing a light-emitting material. The light-emitting layer can contain one or more light-emitting materials. As the light-emitting material, a substance that emits light of a color such as blue, purple, blue-purple, green, yellow-green, yellow, orange, or red is appropriately used. Furthermore, a substance that emits near-infrared light can also be used as the light-emitting material.

[0288] Examples of the light-emitting material include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0289] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0290] Examples of phosphorescent materials include organometallic complexes (particularly iridium complexes) having a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton; organometallic complexes (particularly iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand; platinum complexes; and rare earth metal complexes.

[0291] The light-emitting layer may contain one or more organic compounds (host materials, assist materials, etc.) in addition to the light-emitting material (guest material). As the one or more organic compounds, one or both of a hole-transporting material and an electron-transporting material can be used. Furthermore, as the one or more organic compounds, a bipolar material or a TADF material can be used.

[0292] The light-emitting layer preferably includes, for example, a phosphorescent material and a hole-transporting material and an electron-transporting material that are a combination that easily forms an exciplex. This configuration allows for efficient emission using Exciplex-Triple Energy Transfer (ExTET), which is energy transfer from the exciplex to the light-emitting material (phosphorescent material). By selecting a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest-energy absorption band of the light-emitting material, energy transfer becomes smooth, allowing for efficient emission. This configuration allows for high efficiency, low-voltage operation, and long life of the light-emitting device to be achieved simultaneously.

[0293] The EL layer 113 (or the light-emitting unit) may further include, as a layer other than the light-emitting layer, a layer containing a substance with a high hole-injection property, a substance with a high hole-transport property (also referred to as a hole-transport material), a hole-blocking material, a substance with a high electron-transport property (also referred to as an electron-transport material), a substance with a high electron-injection property, an electron-blocking material, or a bipolar substance (a substance with high electron-transport property and high hole-transport property, also referred to as a bipolar material).

[0294] The light-emitting device can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-emitting device can be formed by a method such as vapor deposition (including vacuum vapor deposition), transfer, printing, inkjet printing, or coating.

[0295] For example, the EL layer 113 (or light-emitting unit) may include one or more of a hole-injection layer, a hole-transport layer, a hole-blocking layer, an electron-blocking layer, an electron-transport layer, and an electron-injection layer.

[0296] The common layer 114 may be one or more of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer. For example, a carrier injection layer (hole injection layer or electron injection layer) may be formed as the common layer 114. Note that the light-emitting device may not have the common layer 114.

[0297] The uppermost light-emitting unit in the EL layer 113 (in this embodiment, the second light-emitting unit 113c) preferably has a light-emitting layer and a carrier transport layer over the light-emitting layer. This prevents the light-emitting layer from being exposed to the outermost surface during the manufacturing process of the display panel 100, and reduces damage to the light-emitting layer. This improves the reliability of the light-emitting device.

[0298] The hole injection layer is a layer that injects holes from the anode into the hole transport layer and contains a substance with high hole injection properties, such as an aromatic amine compound and a composite material containing a hole transport material and an acceptor material (electron acceptor material).

[0299] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light emitting layer. The hole transport layer is a layer that contains a hole transporting material. The hole transporting material is a material having a concentration of 1×10 −６ cm ２ A substance having a hole mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher hole transporting property than electron transporting property. As the hole transporting material, a substance having a high hole transporting property, such as a π-electron-rich heteroaromatic compound (e.g., a carbazole derivative, a thiophene derivative, a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton), is preferred.

[0300] The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light emitting layer. The electron transport layer is a layer that contains an electron transporting material. The electron transporting material is a material having a concentration of 1×10 −６ cm ２ / Vs or more is preferred. Note that other substances can also be used as long as they have a higher electron transporting property than holes. Examples of electron-transporting materials that can be used include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, and metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds.

[0301] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer and contains a substance with high electron injection properties. Examples of the substance with high electron injection properties include alkali metals, alkaline earth metals, and compounds thereof. Examples of the substance with high electron injection properties include a composite material containing an electron transport material and a donor material (electron donor material).

[0302] The electron injection layer may be formed of, for example, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF ｘ , where X is an arbitrary number), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenolatolithium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatolithium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatolithium (abbreviation: LiPPP), lithium oxide (LiO ｘ ), alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used. The electron injection layer may have a stacked structure of two or more layers. For example, the stacked structure may have a structure in which lithium fluoride is used in the first layer and ytterbium is provided in the second layer.

[0303] Alternatively, an electron transporting material may be used for the electron injection layer. For example, a compound having an unshared electron pair and an electron-deficient heteroaromatic ring may be used as the electron transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and a triazine ring may be used.

[0304] The organic compound having an unshared electron pair preferably has a lowest unoccupied molecular orbital (LUMO) level of −3.6 eV to −2.3 eV. Generally, the highest occupied molecular orbital (HOMO) level and the LUMO level of an organic compound can be estimated by cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, inverse photoelectron spectroscopy, or the like.

[0305] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviation: BPhen), 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviation: HATNA), 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), etc. can be used as the organic compound having an unshared electron pair. Note that NBPhen has a higher glass transition point (Tg) and is superior in heat resistance compared to BPhen.

[0306] In addition, in this embodiment, a tandem structure is applied to the light-emitting device. Therefore, a charge generation layer is provided between two light-emitting units. The charge generation layer has at least a charge generation region. The charge generation layer has a function of injecting electrons into one of the two light-emitting units and injecting holes into the other when a voltage is applied between a pair of electrodes.

[0307] As described above, the charge generation layer has at least a charge generation region. The charge generation region preferably contains an acceptor material, for example, a hole transport material and an acceptor material applicable to the hole injection layer.

[0308] The charge generation layer preferably includes a layer containing a substance with high electron injection properties. This layer may also be called an electron injection buffer layer. The electron injection buffer layer is preferably provided between the charge generation region and the electron transport layer. By providing the electron injection buffer layer, the injection barrier between the charge generation region and the electron transport layer can be alleviated, so that electrons generated in the charge generation region can be easily injected into the electron transport layer.

[0309] The electron injection buffer layer preferably contains an alkali metal or an alkaline earth metal, and may contain, for example, an alkali metal compound or an alkaline earth metal compound. Specifically, the electron injection buffer layer preferably contains an inorganic compound containing an alkali metal and oxygen, or an inorganic compound containing an alkaline earth metal and oxygen, and may contain an inorganic compound containing lithium and oxygen (lithium oxide (Li ２ In addition, the electron injection buffer layer can be suitably made of the materials applicable to the electron injection layer described above.

[0310] The charge generation layer preferably has a layer containing a substance with high electron transport properties. This layer can also be called an electron relay layer. The electron relay layer is preferably provided between the charge generation region and the electron injection buffer layer. When the charge generation layer does not have an electron injection buffer layer, the electron relay layer is preferably provided between the charge generation region and the electron transport layer. The electron relay layer has the function of preventing interaction between the charge generation region and the electron injection buffer layer (or the electron transport layer) and smoothly transferring electrons.

[0311] For the electron relay layer, it is preferable to use a phthalocyanine-based material such as copper (II) phthalocyanine (abbreviated as CuPc) or a metal complex having a metal-oxygen bond and an aromatic ligand.

[0312] It should be noted that the charge generation region, electron injection buffer layer, and electron relay layer may not be clearly distinguishable from one another depending on their cross-sectional shapes or characteristics.

[0313] The charge generation layer may contain a donor material instead of an acceptor material. For example, the charge generation layer may contain a layer containing an electron transport material and a donor material that can be used for the electron injection layer.

[0314] When light-emitting units are stacked, an increase in driving voltage can be suppressed by providing a charge generating layer between two light-emitting units.

[0315] The EL layer 113 and the common layer 114 can be formed by a method such as vapor deposition (including vacuum deposition), transfer, printing, ink-jet printing, or coating.

[0316] Thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display panel can be formed by sputtering, CVD, vacuum deposition, PLD, ALD, etc. CVD methods include PECVD and thermal CVD. One type of thermal CVD method is metal organic chemical vapor deposition (MOCVD).

[0317] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display panel can be formed by spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife, slit coating, roll coating, curtain coating, knife coating, etc.

[0318] In particular, vacuum processes such as vapor deposition and solution processes such as spin coating and inkjet printing can be used to fabricate light-emitting devices. Vapor deposition methods include physical vapor deposition (PVD) methods such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, and chemical vapor deposition (CVD). In particular, functional layers included in the EL layer (hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, etc.) can be formed by vapor deposition (vacuum deposition, etc.), coating methods (dip coating, die coating, bar coating, spin coating, spray coating, etc.), printing methods (inkjet printing, screen (stencil printing), offset (lithographic printing), flexography (relief printing), gravure, microcontact printing, etc.), etc.

[0319] Furthermore, when processing the thin film that constitutes the display panel, a photolithography method or the like can be used. Alternatively, the thin film may be processed by a nanoimprint method, a sandblasting method, a lift-off method, or the like. Furthermore, the island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.

[0320] There are two typical photolithography methods: one is to form a resist mask on the thin film to be processed, process the thin film by etching or the like, and then remove the resist mask; the other is to form a photosensitive thin film, and then process the thin film into the desired shape by exposure and development.

[0321] In photolithography, the light used for exposure may be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light, ArF laser light, etc. Exposure may also be performed by immersion exposure technology. Extreme ultraviolet (EUV) light or X-rays may also be used as the light used for exposure. An electron beam may also be used instead of the light used for exposure. Extreme ultraviolet light, X-rays, or an electron beam are preferred because they enable extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, a photomask is not required.

[0322] For etching the thin film, dry etching, wet etching, sandblasting, or the like can be used.

[0323] Next, materials that can be used for the light-receiving device will be described.

[0324] The active layer of the light-receiving device includes a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon and organic semiconductors containing organic compounds. In this embodiment, an example in which an organic semiconductor is used as the semiconductor of the active layer is shown. Using an organic semiconductor is preferable because the light-emitting layer and the active layer can be formed by the same method (e.g., vacuum deposition), allowing the use of a common manufacturing device.

[0325] The n-type semiconductor material of the active layer is fullerene (e.g., C ６０ , C ７０Examples of suitable electron-accepting organic semiconductor materials include fullerene derivatives and other electron-accepting organic semiconductor materials. Fullerenes have a soccer ball-like shape, which is energetically stable. Fullerenes have deep (low) HOMO and LUMO levels. Because fullerenes have a deep LUMO level, they have extremely high electron-accepting (acceptor) properties. Normally, when π-electron conjugation (resonance) spreads across a plane, as in benzene, electron-donating (donor) properties increase, but fullerenes have a spherical shape, so they have high electron-accepting properties despite the wide spread π-electron conjugation. High electron-accepting properties allow charge separation to occur quickly and efficiently, making them useful as light-receiving devices. C ６０ , C ７０ Both have a wide absorption band in the visible light region, and C ７０ is C ６０ Other fullerene derivatives include [6,6]-Phenyl-C71-butylic acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl-C61-butylic acid methyl ester (abbreviation: PC60BM), and 1',1",4',4"-Tetrahydro-di[1,4]methanenaphthaleno[1,2:2',3',56,60:2",3"][5,6]fullerene-C60 (abbreviation: ICBA).

[0326] Furthermore, examples of materials for n-type semiconductors include perylene tetracarboxylic acid derivatives such as N,N'-dimethyl-3,4,9,10-perylene tetracarboxylic acid diimide (abbreviation: Me-PTCDI).

[0327] An example of an n-type semiconductor material is 2,2'-(5,5'-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methane-1-yl-1-ylidene)dimalononitrile (abbreviation: FT2TDMN).

[0328] Examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0329] Examples of the p-type semiconductor material of the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), quinacridone, and rubrene.

[0330] Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, compounds having an aromatic amine skeleton, etc. Examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, tetracene derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, etc.

[0331] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material, and the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0332] It is preferable to use a spherical fullerene as the electron-accepting organic semiconductor material and a planar organic semiconductor material as the electron-donating organic semiconductor material. Molecules with similar shapes tend to aggregate together, and when molecules of the same type aggregate, the energy levels of their molecular orbitals become close, which can improve carrier transport properties.

[0333] For example, the active layer is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor, or may be formed by laminating an n-type semiconductor and a p-type semiconductor.

[0334] The light-receiving device may further include, as a layer other than the active layer, a layer containing a substance with high hole-transporting properties, a substance with high electron-transporting properties, a bipolar substance (a substance with high electron-transporting properties and high hole-transporting properties), etc. Furthermore, without being limited to the above, the light-receiving device may further include a layer containing a substance with high hole-injecting properties, a hole-blocking material, a substance with high electron-injecting properties, an electron-blocking material, etc.

[0335] The light-receiving device may be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-receiving device may be formed by a method such as vapor deposition (including vacuum deposition), transfer, printing, inkjet printing, or coating.

[0336] For example, the hole transport material or electron blocking material may be a polymer compound such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS), or an inorganic compound such as molybdenum oxide or copper iodide (CuI). The electron transport material or hole blocking material may be an inorganic compound such as zinc oxide (ZnO), or an organic compound such as polyethyleneimine ethoxylate (PEIE). The light-receiving device may have, for example, a mixed film of PEIE and ZnO.

[0337] Furthermore, a polymer compound such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]] polymer (abbreviated as PBDB-T) or a PBDB-T derivative, which functions as a donor, can be used in the active layer. For example, a method of dispersing an acceptor material in PBDB-T or a PBDB-T derivative can be used.

[0338] The active layer may contain three or more materials. For example, in order to broaden the absorption wavelength range, a third material may be mixed in addition to an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0339] As described above, in the manufacturing method of the display panel of this embodiment, the island-shaped EL layer is formed by forming the EL layer on the entire surface and then processing it, rather than using a metal mask having a fine pattern. Therefore, the size of the island-shaped EL layer and the size of the subpixel can be made smaller than the size formed using a metal mask. Therefore, it is possible to realize a high-definition display panel or a display panel with a high aperture ratio, which has been difficult to achieve until now.

[0340] The display panel of one embodiment of the present invention includes a light-emitting device having a tandem structure, which allows easy adjustment of carrier balance and reduces the change in emission color between low and high luminance. Furthermore, the EL layer is provided in an island shape for each subpixel, which can prevent leakage current from occurring between the subpixels. This can prevent degradation of the display quality of the display panel. Furthermore, the display panel can achieve both high resolution and high display quality.

[0341] The display panel of this embodiment can reduce the distance between light-emitting devices. Specifically, the distance between light-emitting devices, the distance between EL layers, or the distance between pixel electrodes can be less than 10 μm, 5 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, 500 nm or less, 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm or less. In other words, the display panel of this embodiment has a region where the distance between two adjacent EL layers 113 is 1 μm or less, preferably a region where the distance is 0.5 μm (500 nm) or less, and more preferably a region where the distance is 100 nm or less.

[0342] This embodiment mode can be combined with other embodiment modes as appropriate.

[0343] Embodiment 3 In this embodiment, a display panel according to one embodiment of the present invention will be described with reference to FIGS.

[0344] [Pixel Layout] In this embodiment, pixel layouts different from that shown in Fig. 6A will be mainly described. There are no particular limitations on the arrangement of sub-pixels, and various methods can be applied. Examples of sub-pixel arrangements include a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.

[0345] Examples of the top surface shape of the subpixel include a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, a circle, etc. Here, the top surface shape of the subpixel corresponds to the top surface shape of the light-emitting region of the light-emitting device.

[0346] An S-stripe arrangement is applied to the pixel 110 shown in Fig. 13A. The pixel 110 shown in Fig. 13A is composed of three subpixels: subpixels 110a, 110b, and 110c. For example, as shown in Fig. 15A, the subpixel 110a may be a blue subpixel B, the subpixel 110b may be a red subpixel R, and the subpixel 110c may be a green subpixel G.

[0347] The pixel 110 shown in FIG. 13B includes a subpixel 110a having a generally trapezoidal top surface shape with rounded corners, a subpixel 110b having a generally triangular top surface shape with rounded corners, and a subpixel 110c having a generally rectangular or hexagonal top surface shape with rounded corners. Furthermore, the subpixel 110a has a larger light-emitting area than the subpixel 110b. In this manner, the shape and size of each subpixel can be determined independently. For example, the subpixel having a more reliable light-emitting device can be made smaller in size. For example, as shown in FIG. 15B, the subpixel 110a may be a green subpixel G, the subpixel 110b may be a red subpixel R, and the subpixel 110c may be a blue subpixel B.

[0348] The pixels 124a and 124b shown in Fig. 13C are arranged in a Pentile arrangement. Fig. 13C shows an example in which a pixel 124a having subpixels 110a and 110b and a pixel 124b having subpixels 110b and 110c are arranged alternately. For example, as shown in Fig. 15C, the subpixel 110a may be a red subpixel R, the subpixel 110b may be a green subpixel G, and the subpixel 110c may be a blue subpixel B.

[0349] The pixels 124a and 124b shown in Figures 13D and 13E are arranged in a delta configuration. The pixel 124a has two subpixels (subpixels 110a and 110b) in the upper row (first row) and one subpixel (subpixel 110c) in the lower row (second row). The pixel 124b has one subpixel (subpixel 110c) in the upper row (first row) and two subpixels (subpixels 110a and 110b) in the lower row (second row). For example, as shown in Figure 15D, the subpixel 110a may be a red subpixel R, the subpixel 110b may be a green subpixel G, and the subpixel 110c may be a blue subpixel B.

[0350] FIG. 13D shows an example in which each subpixel has a substantially rectangular top surface shape with rounded corners, and FIG. 13E shows an example in which each subpixel has a circular top surface shape.

[0351] 13F shows an example in which subpixels of each color are arranged in a zigzag pattern. Specifically, when viewed from above, the positions of the upper edges of two subpixels aligned in the column direction (e.g., subpixels 110a and 110b, or subpixels 110b and 110c) are misaligned. For example, as shown in FIG. 15E, the subpixel 110a may be a red subpixel R, the subpixel 110b may be a green subpixel G, and the subpixel 110c may be a blue subpixel B.

[0352] In photolithography, the finer the pattern to be processed, the more significant the effect of light diffraction becomes. This reduces the fidelity of the photomask pattern when it is transferred by exposure, making it difficult to process the resist mask into the desired shape. Therefore, even if the photomask pattern is rectangular, it is likely to have rounded corners. As a result, the top surface shape of the subpixel may become a polygon with rounded corners, an ellipse, a circle, or the like.

[0353] Furthermore, in a manufacturing method of a display panel according to one embodiment of the present invention, the EL layer is processed into an island shape using a resist mask. The resist film formed on the EL layer needs to be cured at a temperature lower than the heat resistance temperature of the EL layer. Therefore, depending on the heat resistance temperature of the material for the EL layer and the curing temperature of the resist material, the resist film may not be cured sufficiently. A resist film that is not cured sufficiently may have a shape that is different from the desired shape during processing. As a result, the top surface shape of the EL layer may become a polygon with rounded corners, an ellipse, a circle, or the like. For example, when a resist mask with a square top surface shape is formed, a resist mask with a circular top surface shape may be formed, resulting in a circular top surface shape of the EL layer.

[0354] In order to form the top surface of the EL layer into a desired shape, a technique for correcting a mask pattern in advance (OPC (Optical Proximity Correction) technique) may be used so that the design pattern and the transfer pattern coincide with each other. Specifically, the OPC technique adds a correction pattern to the corners of figures on the mask pattern.

[0355] In addition, even in the pixel 110 to which the stripe arrangement shown in FIG. 6A is applied, for example, as shown in FIG. 15F, the subpixel 110a can be a red subpixel R, the subpixel 110b can be a green subpixel G, and the subpixel 110c can be a blue subpixel B.

[0356] As shown in Figures 14A to 14H, a pixel can be configured to have four types of sub-pixels.

[0357] The pixels 110 shown in FIGS. 14A to 14C are arranged in a stripe pattern.

[0358] FIG. 14A shows an example in which each subpixel has a rectangular top surface shape, FIG. 14B shows an example in which each subpixel has a top surface shape that is a combination of two semicircles and a rectangle, and FIG. 14C shows an example in which each subpixel has an elliptical top surface shape.

[0359] The pixels 110 shown in FIGS. 14D to 14F are arranged in a matrix.

[0360] Figure 14D is an example in which each sub-pixel has a square top surface shape, Figure 14E is an example in which each sub-pixel has an approximately square top surface shape with rounded corners, and Figure 14F is an example in which each sub-pixel has a circular top surface shape.

[0361] 14G and 14H show an example in which one pixel 110 is configured in two rows and three columns.

[0362] 14G has three subpixels (subpixels 110a, 110b, and 110c) in the top row (first row) and one subpixel (subpixel 110d) in the bottom row (second row). In other words, pixel 110 has subpixel 110a in the left column (first column), subpixel 110b in the center column (second column), subpixel 110c in the right column (third column), and subpixel 110d across these three columns.

[0363] The pixel 110 shown in FIG. 14H has three subpixels (subpixels 110a, 110b, and 110c) in the top row (first row) and three subpixels 110d in the bottom row (second row). In other words, the pixel 110 has subpixels 110a and 110d in the left column (first column), subpixels 110b and 110d in the center column (second column), and subpixels 110c and 110d in the right column (third column). By aligning the subpixels in the top and bottom rows as shown in FIG. 14H , it is possible to efficiently remove dust and other particles that may occur during the manufacturing process. Therefore, a display panel with high display quality can be provided.

[0364] The pixel 110 shown in Figures 14A to 14H is composed of four subpixels: subpixels 110a, 110b, 110c, and 110d. Each of the subpixels 110a, 110b, 110c, and 110d has an emissive device that emits light of a different color. The subpixels 110a, 110b, 110c, and 110d may be subpixels of four colors: R, G, B, and white (W), subpixels of four colors: R, G, B, and Y, or subpixels of R, G, B, and infrared light (IR). For example, as shown in Figures 15G to 15J, the subpixels 110a, 110b, 110c, and 110d may be subpixels of red, green, blue, and white, respectively.

[0365] A display panel according to one embodiment of the present invention may include a light-receiving device in a pixel.

[0366] Of the four types of sub-pixels included in the pixel 110 shown in FIGS. 15G to 15J, three may be configured to have a light-emitting device, and the remaining one may be configured to have a light-receiving device.

[0367] For example, the subpixels 110a, 110b, and 110c may be subpixels of three colors, R, G, and B, and the subpixel 110d may be a subpixel having a light receiving device.

[0368] 16A and 16B includes subpixels G, B, R, and PS. The arrangement order of the subpixels is not limited to the illustrated configuration and can be determined as appropriate. For example, the positions of subpixels G and R may be interchanged.

[0369] The pixels shown in Fig. 16A are arranged in a stripe pattern, while the pixels shown in Fig. 16B are arranged in a matrix pattern.

[0370] The sub-pixel R emits red light, the sub-pixel G emits green light, and the sub-pixel B emits blue light.

[0371] The subpixels PS each have a light-receiving device. The wavelength of light detected by the subpixels PS is not particularly limited. The subpixels PS may be configured to detect either or both of visible light and infrared light.

[0372] 16C and 16D includes subpixels G, B, R, X1, and X2. The arrangement order of the subpixels is not limited to the illustrated configuration and can be determined as appropriate. For example, the positions of subpixels G and R may be interchanged.

[0373] 16C shows an example in which one pixel is arranged across two rows and three columns. Three subpixels (subpixel G, subpixel B, and subpixel R) are provided in the top row (first row). In FIG. 16C, two subpixels (subpixel X1 and subpixel X2) are provided in the bottom row (second row).

[0374] Fig. 16D shows an example in which one pixel is configured with three rows and two columns. In Fig. 16D, subpixel G is located in the first row, subpixel R is located in the second row, and subpixel B is located across these two rows. In addition, two subpixels (subpixels X1 and X2) are located in the third row. In other words, the pixel shown in Fig. 16D has three subpixels (subpixels G, R, and X2) in the left column (first column) and two subpixels (subpixels B and X1) in the right column (second column).

[0375] The layout of the R, G, and B sub-pixels shown in Fig. 16C is a stripe arrangement. The layout of the R, G, and B sub-pixels shown in Fig. 16D is a so-called S-stripe arrangement. This makes it possible to achieve high display quality.

[0376] It is preferable that at least one of the subpixels X1 and X2 has a light receiving device (which can also be said to be the subpixel PS).

[0377] The layout of the pixel having the sub-pixel PS is not limited to the configurations shown in FIGS. 16A to 16D.

[0378] For example, a configuration that emits infrared light (IR) can be applied to the subpixel X1 or the subpixel X2. In this case, it is preferable that the subpixel PS detects infrared light. For example, while displaying an image using the subpixels R, G, and B, one of the subpixels X1 and X2 can be used as a light source, and the other of the subpixels X1 and X2 can detect reflected light emitted from the light source.

[0379] Furthermore, a configuration including a light receiving device can be applied to both the subpixel X1 and the subpixel X2. In this case, the wavelength ranges of light detected by the subpixel X1 and the subpixel X2 may be the same, different, or partially common. For example, one of the subpixels X1 and X2 may mainly detect visible light, and the other may mainly detect infrared light.

[0380] The light receiving area of ​​subpixel X1 is smaller than the light receiving area of ​​subpixel X2. The smaller the light receiving area, the narrower the imaging range, which makes it possible to suppress blurring in the imaging result and improve resolution. Therefore, by using subpixel X1, it is possible to perform imaging with higher definition or resolution than when using the light receiving device of subpixel X2. For example, subpixel X1 can be used to perform imaging for personal authentication using a fingerprint, palm print, iris, pulse shape (including vein shape and artery shape), face, etc.

[0381] The light receiving device included in the subpixel PS preferably detects visible light, and preferably detects one or more of light of blue, purple, blue-purple, green, yellow-green, yellow, orange, red, etc. The light receiving device included in the subpixel PS may also detect infrared light.

[0382] Furthermore, when a configuration including a light receiving device is applied to the subpixel X2, the subpixel X2 can be used as a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, hover touch sensor, non-contact sensor, or touchless sensor). The wavelength of light to be detected by the subpixel X2 can be appropriately determined depending on the application. For example, it is preferable that the subpixel X2 detects infrared light. This enables touch detection even in dark places.

[0383] Here, the touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen).

[0384] A touch sensor can detect an object when the display panel and the object are in direct contact with each other. A near-touch sensor can detect an object even if the object does not touch the display panel. For example, a configuration in which the display panel can detect an object when the distance between the display panel and the object is between 0.1 mm and 300 mm, preferably between 3 mm and 50 mm, is preferable. This configuration allows the display panel to be operated without the object directly touching it, in other words, allows the display panel to be operated in a non-contact (touchless) manner. This configuration reduces the risk of the display panel becoming dirty or scratched, or allows the object to operate the display panel without directly touching dirt (e.g., dust, viruses, etc.) adhering to the display panel.

[0385] Furthermore, the display panel of one embodiment of the present invention can have a variable refresh rate. For example, the refresh rate can be adjusted (for example, within a range of 1 Hz to 240 Hz) depending on the content displayed on the display panel to reduce power consumption. Furthermore, the drive frequency of the touch sensor or near-touch sensor may be changed depending on the refresh rate. For example, when the refresh rate of the display panel is 120 Hz, the drive frequency of the touch sensor or near-touch sensor can be set to a frequency higher than 120 Hz (typically 240 Hz). This configuration enables low power consumption and an increased response speed of the touch sensor or near-touch sensor.

[0386] The display panel 100 shown in FIGS. 16E to 16G includes, between a substrate 351 and a substrate 359, a layer 353 having a light-receiving device, a functional layer 355, and a layer 357 having a light-emitting device.

[0387] The functional layer 355 includes a circuit for driving the light-receiving device and a circuit for driving the light-emitting device. The functional layer 355 may be provided with switches, transistors, capacitors, resistors, wiring, terminals, etc. Note that when the light-emitting device and the light-receiving device are driven by a passive matrix method, a configuration without switches and transistors may be used.

[0388] 16E , when a finger 352 touches the display panel 100, light emitted by a light-emitting device in a layer 357 having light-emitting devices is reflected by the finger 352, and the reflected light is detected by a light-receiving device in a layer 353 having light-receiving devices. This makes it possible to detect that the finger 352 has touched the display panel 100.

[0389] 16F and 16G, the display panel may have a function of detecting or capturing an image of an object that is close to (i.e., not in contact with) the display panel. Fig. 16F shows an example of detecting a person's finger, and Fig. 16G shows an example of detecting information about the periphery, surface, or interior of a person's eye (such as the number of blinks, eyeball movement, and eyelid movement).

[0390] The display panel of this embodiment can use the light receiving device to capture images of the area around the eye, the surface of the eye, or the inside of the eye (such as the fundus) of the user of the wearable device. Therefore, the wearable device can have a function to detect one or more of the user's blinking, movement of the pupil, and movement of the eyelid.

[0391] As described above, the display panel of one embodiment of the present invention can employ various layouts for pixels each including a subpixel having a light-emitting device. The display panel of one embodiment of the present invention can also employ a structure in which a pixel includes both a light-emitting device and a light-receiving device. In this case, various layouts can also be employed.

[0392] This embodiment mode can be combined with other embodiment modes as appropriate.

[0393] Embodiment 4 In this embodiment, a display panel according to one embodiment of the present invention will be described with reference to FIGS.

[0394] The display panel of the present embodiment can be a high-definition display panel, and can therefore be used as a display unit for information terminals (wearable devices) such as wristwatches and bracelets, as well as for wearable devices that can be worn on the head, such as VR devices such as head-mounted displays and AR devices such as glasses.

[0395] The display panel of the present embodiment can be a high-resolution display panel or a large-sized display panel. Therefore, the display panel of the present embodiment can be used in electronic devices with relatively large screens, such as television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproduction devices.

[0396] In the display panel of this embodiment, a tandem structure is applied to the light-emitting devices, so that the change in chromaticity between light emission at low luminance and light emission at high luminance is small. Furthermore, in the display panel of this embodiment, the EL layers of each light-emitting device are separated, so that crosstalk between adjacent subpixels can be suppressed even in a high-resolution display panel. Therefore, a display panel with high resolution and high display quality can be realized.

[0397] As described above, the display panel of this embodiment can be used for one or both of a wearable display device and a terminal device in a display system according to one embodiment of the present invention.

[0398] 17A shows a perspective view of a display module 280. The display module 280 has a display panel 100A and an FPC 290. Note that the display panel included in the display module 280 is not limited to the display panel 100A, and may be any of the display panels 100B to 100F described below.

[0399] The display module 280 has a substrate 291 and a substrate 292. The display module 280 has a display portion 281. The display portion 281 is a region that displays an image in the display module 280, and is a region where light from each pixel provided in a pixel portion 284 (described later) can be viewed.

[0400] 17B is a perspective view schematically illustrating the configuration on the substrate 291 side. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are stacked on the substrate 291. A terminal portion 285 for connecting to the FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel portion 284. The terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 composed of a plurality of wirings.

[0401] The pixel section 284 has a plurality of periodically arranged pixels 284a. An enlarged view of one pixel 284a is shown on the right side of Fig. 17B. The pixel 284a has a sub-pixel 110R that emits red light, a sub-pixel 110G that emits green light, and a sub-pixel 110B that emits blue light.

[0402] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0403] One pixel circuit 283a is a circuit that controls the light emission of three light-emitting devices included in one pixel 284a. One pixel circuit 283a may be configured to have three circuits that control the light emission of one light-emitting device. For example, the pixel circuit 283a may be configured to have at least one selection transistor, one current control transistor (drive transistor), and a capacitor for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to the source. This realizes an active matrix display panel.

[0404] The circuit portion 282 includes a circuit for driving each pixel circuit 283 a of the pixel circuit portion 283. For example, the circuit portion 282 preferably includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 282 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0405] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit portion 282. An IC may be mounted on the FPC 290.

[0406] The display module 280 can be configured such that one or both of the pixel circuit unit 283 and the circuit unit 282 are provided overlapping below the pixel unit 284, thereby enabling the aperture ratio (effective display area ratio) of the display unit 281 to be extremely high. For example, the aperture ratio of the display unit 281 can be 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. Furthermore, the pixels 284a can be arranged at an extremely high density, enabling the resolution of the display unit 281 to be extremely high. For example, it is preferable that the pixels 284a be arranged in the display unit 281 at a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and 20,000 ppi or less, or 30,000 ppi or less.

[0407] Because such a display module 280 has extremely high resolution, it can be suitably used in VR devices such as head-mounted displays, or in glasses-type AR devices. For example, even in a configuration in which the display unit of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display unit 281, so even when the display unit is enlarged with lenses, the pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices with relatively small display units. For example, it can be suitably used in the display unit of a wearable electronic device such as a wristwatch.

[0408] [Display Panel 100A] The display panel 100A shown in FIG. 18A includes a substrate 301, a light-emitting device 130R, a light-emitting device 130G, a light-emitting device 130B, a colored layer 132R, a colored layer 132G, a colored layer 132B, a capacitor 240, a transistor 310, and the like.

[0409] The subpixel 110R has a light-emitting device 130R and a colored layer 132R, the subpixel 110G has a light-emitting device 130G and a colored layer 132G, and the subpixel 110B has a light-emitting device 130B and a colored layer 132B. The light-emitting devices 130R, 130G, and 130B can be configured to emit white light. In the subpixel 110R, light emitted from the light-emitting device 130R is extracted as red light to the outside of the display panel 100A via the colored layer 132R. Similarly, in the subpixel 110G, light emitted from the light-emitting device 130G is extracted as green light to the outside of the display panel 100A via the colored layer 132G. In the subpixel 110B, light emitted from the light-emitting device 130B is extracted as blue light to the outside of the display panel 100A via the colored layer 132B.

[0410] The light-emitting devices included in the sub-pixels that emit light of each color can all have the same configuration, for example, a configuration that emits white light. Specifically, the EL layers 113 included in the light-emitting devices can have the same configuration. On the other hand, since the EL layers 113 included in each light-emitting device are separated, it is possible to suppress the occurrence of leakage current between the light-emitting devices. This can improve the display quality of the display panel.

[0411] 17A and 17B. The stacked structure from the substrate 301 to the insulating layer 255c corresponds to the layer 101 including the transistor in Embodiment 2.

[0412] The transistor 310 has a channel formation region in a substrate 301. The substrate 301 can be, for example, a semiconductor substrate such as a single crystal silicon substrate. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as one of a source and a drain. The insulating layer 314 is provided to cover a side surface of the conductive layer 311.

[0413] An element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0414] In addition, an insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided over the insulating layer 261 .

[0415] The capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located therebetween. The conductive layer 241 functions as one electrode of the capacitor 240, the conductive layer 245 functions as the other electrode of the capacitor 240, and the insulating layer 243 functions as a dielectric of the capacitor 240.

[0416] The conductive layer 241 is provided over the insulating layer 261 and is buried in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and drain of the transistor 310 by a plug 271 buried in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0417] An insulating layer 255a is provided to cover the capacitor 240, an insulating layer 255b is provided over the insulating layer 255a, and an insulating layer 255c is provided over the insulating layer 255b.

[0418] The insulating layers 255a, 255b, and 255c can be formed using various inorganic insulating films such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, and a nitride oxide insulating film. The insulating layers 255a and 255c are preferably formed using an oxide insulating film or an oxynitride insulating film such as a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film. The insulating layer 255b is preferably formed using a nitride insulating film or a nitride oxide insulating film such as a silicon nitride film or a silicon nitride oxide film. More specifically, the insulating layers 255a and 255c are preferably formed using silicon oxide films, and the insulating layer 255b is preferably formed using a silicon nitride film. The insulating layer 255b preferably functions as an etching protective film. Although this embodiment shows an example in which a recess is provided in the insulating layer 255c, the insulating layer 255c does not necessarily have to have a recess.

[0419] Light-emitting devices 130R, 130G, and 130B are provided on insulating layer 255c. FIG. 18A shows an example in which light-emitting devices 130R, 130G, and 130B have a stacked structure similar to that shown in FIG. 6B. An insulator is provided in the region between adjacent light-emitting devices. In FIG. 18A and other examples, an insulating layer 125 and an insulating layer 127 on insulating layer 125 are provided in this region. A sacrificial layer 118 is located between the insulating layer 125 and the EL layer 113 of light-emitting devices 130R, 130G, and 130B.

[0420] The pixel electrodes 111a, 111b, and 111c of the light-emitting device are electrically connected to one of the source and drain of the transistor 310 via a plug 256 embedded in the insulating layers 255a, 255b, and 255c, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. The height of the top surface of the insulating layer 255c and the height of the top surface of the plug 256 are the same or approximately the same. Various conductive materials can be used for the plug. Figure 18A and other figures show an example in which the pixel electrode has a two-layer structure consisting of a reflective electrode and a transparent electrode on the reflective electrode.

[0421] Furthermore, a protective layer 131 is provided on the light-emitting devices 130R, 130G, and 130B. A substrate 120 is bonded to the protective layer 131 with a resin layer 122. For details of the components from the light-emitting devices to the substrate 120, refer to Embodiment 2. The substrate 120 corresponds to the substrate 292 in FIG. 17A .

[0422] No insulating layer covering the upper end portions of the pixel electrodes 111a, 111b, and 111c is provided between each of the pixel electrodes 111a, 111b, and 111c and the EL layer 113. This allows the distance between adjacent light-emitting devices to be extremely narrow, thereby enabling a high-definition or high-resolution display panel.

[0423] Although the display panel 100A has been shown as including the light-emitting devices 130R, 130G, and 130B, the display panel of this embodiment may further include a light-receiving device.

[0424] 18B is a modified example of the laminated structure from the insulating layer 255b to the substrate 120 of the display panel shown in FIG. 18A, and includes light-emitting devices 130R and 130G and a light-receiving device 150. The light-receiving device 150 includes a pixel electrode 111d, a layer 155 including an active layer, a common layer 114, and a common electrode 115, which are laminated together. For details of the components of the light-receiving device 150, refer to Embodiment 2.

[0425] The display panels shown in Figures 19A and 19B are each modified examples of the laminated structure from the insulating layer 255b to the substrate 120 of the display panel shown in Figure 18A. As shown in Figures 19A and 19B, a lens array 133 may be provided. By using the lens array 133, light emitted from the light-emitting device can be condensed.

[0426] 19A shows an example in which colored layers 132R, 132G, and 132B are provided on light-emitting devices 130R, 130G, and 130B via a protective layer 131, an insulating layer 134 is provided on the colored layers 132R, 132G, and 132B, and a lens array 133 is provided on the insulating layer 134. By forming the colored layers 132R, 132G, and 132B and the lens array 133 directly on a substrate on which the light-emitting devices are formed, it is possible to improve the accuracy of alignment between the light-emitting devices and the colored layers or the lens array.

[0427] The insulating layer 134 can be made of either or both of an inorganic insulating film and an organic insulating film. The insulating layer 134 may have a single-layer structure or a multi-layer structure. For example, the same materials that can be used for the protective layer 131 can be used for the insulating layer 134. Since light emitted from the light-emitting device is extracted through the insulating layer 134, it is preferable that the insulating layer 134 have high transparency to visible light.

[0428] 19A, light emitted from the light-emitting device passes through the colored layer and then passes through the lens array 133 to be extracted to the outside of the display panel. By positioning the light-emitting device and the colored layer close to each other, color mixing can be suppressed and viewing angle characteristics can be improved, which is preferable. Alternatively, the lens array 133 may be provided on the light-emitting device, and the colored layer may be provided on the lens array 133.

[0429] 19B shows an example in which a substrate 120 provided with colored layers 132R, 132G, 132B, and a lens array 133 is bonded to a protective layer 131 by a resin layer 122. By providing the colored layers 132R, 132G, 132B, and the lens array 133 on the substrate 120, the temperature of the heat treatment in the formation process of these layers can be increased.

[0430] 19B shows an example in which colored layers 132R, 132G, and 132B are provided in contact with the substrate 120, an insulating layer 134 is provided in contact with the colored layers 132R, 132G, and 132B, and a lens array 133 is provided in contact with the insulating layer 134. In FIG.

[0431] In FIG. 19B , light emitted from the light-emitting device passes through the lens array 133, then passes through the colored layer, and is extracted to the outside of the display panel. Alternatively, the lens array 133 may be provided in contact with the substrate 120, the insulating layer 134 may be provided in contact with the lens array 133, and the colored layer may be provided in contact with the insulating layer 134. In this case, light emitted from the light-emitting device passes through the colored layer, then passes through the lens array 133, and is extracted to the outside of the display panel. As shown in FIGS. 19A and 19B , it is preferable to provide an overlapping region between the lens array 133 and an adjacent lens array 133, where the colored layer 132B and the colored layer 132G overlap, and an overlapping region between the colored layer 132G and the colored layer 132R. By providing overlapping regions between colored layers of different colors, color mixing of the light emitted from the light-emitting device can be suppressed.

[0432] The convex surface of the lens array 133 may face either the substrate 120 side or the light-emitting device side. From the viewpoint of ease of fabrication, when lenses are fabricated on the light-emitting device, it is preferable that the convex surface faces the substrate 120 side, and when lenses are fabricated on the substrate 120 side, it is preferable that the convex surface faces the light-emitting device side.

[0433] The lens array 133 can be formed using at least one of an inorganic material and an organic material. For example, a material containing a resin can be used for the lenses. Also, a material containing at least one of an oxide and a sulfide can be used for the lenses. For example, a microlens array can be used as the lens array 133. The lens array 133 can be formed directly on the substrate or the light-emitting device, or a separately formed lens array can be bonded thereto.

[0434] 20 has a stacked configuration of a transistor 310A and a transistor 310B, each of which has a channel formed in a semiconductor substrate. Note that in the following description of the display panel, descriptions of parts that are the same as those of the display panel described above may be omitted.

[0435] The display panel 100B has a structure in which a substrate 301B provided with a transistor 310B, a capacitor 240, and a light-emitting device and a substrate 301A provided with a transistor 310A are bonded together.

[0436] Here, it is preferable to provide an insulating layer 345 on the lower surface of the substrate 301B. It is also preferable to provide an insulating layer 346 on the insulating layer 261 provided on the substrate 301A. The insulating layers 345 and 346 are insulating layers that function as protective layers and can suppress the diffusion of impurities into the substrates 301B and 301A. The insulating layers 345 and 346 can be made of an inorganic insulating film that can be used for the protective layer 131 or the insulating layer 332.

[0437] The substrate 301B is provided with a plug 343 that penetrates the substrate 301B and an insulating layer 345. Here, it is preferable to provide an insulating layer 344 to cover the side surface of the plug 343. The insulating layer 344 is an insulating layer that functions as a protective layer and can suppress the diffusion of impurities into the substrate 301B. The insulating layer 344 can be an inorganic insulating film that can be used for the protective layer 131.

[0438] Furthermore, a conductive layer 342 is provided on the back surface (surface opposite to the substrate 120 side) of the substrate 301B, below the insulating layer 345. The conductive layer 342 is preferably provided so as to be embedded in the insulating layer 335. Furthermore, the lower surfaces of the conductive layer 342 and the insulating layer 335 are preferably flattened. Here, the conductive layer 342 is electrically connected to the plug 343.

[0439] On the other hand, in the substrate 301A, a conductive layer 341 is provided on an insulating layer 346. The conductive layer 341 is preferably provided so as to be embedded in the insulating layer 336. In addition, the upper surfaces of the conductive layer 341 and the insulating layer 336 are preferably flattened.

[0440] The substrate 301A and the substrate 301B are electrically connected by bonding the conductive layer 341 and the conductive layer 342. Here, by improving the flatness of the surface formed by the conductive layer 342 and the insulating layer 335 and the surface formed by the conductive layer 341 and the insulating layer 336, the conductive layer 341 and the conductive layer 342 can be favorably bonded to each other.

[0441] It is preferable to use the same conductive material for the conductive layers 341 and 342. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film containing the above elements (titanium nitride film, molybdenum nitride film, tungsten nitride film), etc., can be used. In particular, it is preferable to use copper for the conductive layers 341 and 342. This allows the use of Cu-Cu (copper-copper) direct bonding technology (technology that achieves electrical conductivity by connecting Cu (copper) pads together).

[0442] [Display Panel 100C] A display panel 100C shown in FIG. 21 has a configuration in which a conductive layer 341 and a conductive layer 342 are joined via a bump 347.

[0443] 21 , by providing a bump 347 between the conductive layer 341 and the conductive layer 342, the conductive layer 341 and the conductive layer 342 can be electrically connected. The bump 347 can be formed using a conductive material containing, for example, gold (Au), nickel (Ni), indium (In), tin (Sn), or the like. Alternatively, for example, solder may be used as the bump 347. An adhesive layer 348 may be provided between the insulating layer 345 and the insulating layer 346. When the bump 347 is provided, the insulating layer 335 and the insulating layer 336 may not be provided.

[0444] [Display Panel 100D] The display panel 100D shown in FIG. 22 differs from the display panel 100A mainly in the configuration of the transistors.

[0445] The transistor 320 is a transistor (OS transistor) in which a metal oxide (also referred to as an oxide semiconductor) is used for a semiconductor layer in which a channel is formed.

[0446] The transistor 320 includes a semiconductor layer 321 , an insulating layer 323 , a conductive layer 324 , a pair of conductive layers 325 , an insulating layer 326 , and a conductive layer 327 .

[0447] 17A and 17B . The stacked structure from the substrate 331 to the insulating layer 255b corresponds to the layer 101 including the transistor in Embodiment 2. The substrate 331 can be an insulating substrate or a semiconductor substrate.

[0448] An insulating layer 332 is provided over a substrate 331. The insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320 and prevents oxygen from being released from the semiconductor layer 321 toward the insulating layer 332. The insulating layer 332 can be, for example, a film through which hydrogen or oxygen is less likely to diffuse than a silicon oxide film, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film.

[0449] A conductive layer 327 is provided over the insulating layer 332, and an insulating layer 326 is provided to cover the conductive layer 327. The conductive layer 327 functions as a first gate electrode of the transistor 320, and part of the insulating layer 326 functions as a first gate insulating layer. An oxide insulating film such as a silicon oxide film is preferably used for at least a portion of the insulating layer 326 that is in contact with the semiconductor layer 321. The top surface of the insulating layer 326 is preferably planarized.

[0450] The semiconductor layer 321 is provided over the insulating layer 326. The semiconductor layer 321 preferably includes a metal oxide (also referred to as an oxide semiconductor) film having semiconductor properties. A pair of conductive layers 325 is provided over and in contact with the semiconductor layer 321 and functions as a source electrode and a drain electrode.

[0451] An insulating layer 328 is provided to cover top surfaces and side surfaces of the pair of conductive layers 325 and side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided over the insulating layer 328. The insulating layer 328 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 264 or the like into the semiconductor layer 321 and prevents oxygen from being released from the semiconductor layer 321. The insulating layer 328 can be an insulating film similar to the insulating layer 332.

[0452] Openings reaching the semiconductor layer 321 are provided in the insulating layer 328 and the insulating layer 264. Inside the openings, an insulating layer 323 and a conductive layer 324 are buried, which are in contact with side surfaces of the insulating layer 264, the insulating layer 328, and the conductive layer 325 and an upper surface of the semiconductor layer 321. The conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.

[0453] The top surfaces of the conductive layer 324, the insulating layer 323, and the insulating layer 264 are planarized so that their heights are the same or approximately the same, and insulating layers 329 and 265 are provided to cover them.

[0454] The insulating layer 264 and the insulating layer 265 function as interlayer insulating layers. The insulating layer 329 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 265 or the like to the transistor 320. The insulating layer 329 can be formed using an insulating film similar to the insulating layer 328 and the insulating layer 332.

[0455] A plug 274 electrically connected to one of the pair of conductive layers 325 is provided to be embedded in the insulating layer 265, the insulating layer 329, and the insulating layer 264. Here, the plug 274 preferably includes a conductive layer 274a covering the side surfaces of the openings of the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328 and part of the top surface of the conductive layer 325, and a conductive layer 274b in contact with the top surface of the conductive layer 274a. In this case, the conductive layer 274a is preferably made of a conductive material through which hydrogen and oxygen do not easily diffuse.

[0456] [Display Panel 100E] A display panel 100E illustrated in FIG. 23 has a stacked structure of a transistor 320A and a transistor 320B each including an oxide semiconductor as a semiconductor in which a channel is formed.

[0457] The transistor 320A, the transistor 320B, and the surrounding structures can be referred to the display panel 100D.

[0458] Although two transistors including an oxide semiconductor are stacked here, the present invention is not limited to this structure, and for example, three or more transistors may be stacked.

[0459] [Display Panel 100F] A display panel 100F shown in FIG. 24 has a stacked structure of a transistor 310 in which a channel is formed in a substrate 301 and a transistor 320 in which a channel is formed and a semiconductor layer containing metal oxide.

[0460] An insulating layer 261 is provided to cover the transistor 310, and a conductive layer 251 is provided over the insulating layer 261. An insulating layer 262 is provided to cover the conductive layer 251, and a conductive layer 252 is provided over the insulating layer 262. The conductive layers 251 and 252 each function as wirings. An insulating layer 263 and an insulating layer 332 are provided to cover the conductive layer 252, and the transistor 320 is provided over the insulating layer 332. An insulating layer 265 is provided to cover the transistor 320, and a capacitor 240 is provided over the insulating layer 265. The capacitor 240 and the transistor 320 are electrically connected by a plug 274.

[0461] The transistor 320 can be used as a transistor that forms a pixel circuit. The transistor 310 can be used as a transistor that forms a pixel circuit or a driver circuit (gate line driver circuit, source line driver circuit) that drives the pixel circuit. The transistors 310 and 320 can be used as transistors that form various circuits such as an arithmetic circuit or a memory circuit.

[0462] With this configuration, not only pixel circuits but also driving circuits etc. can be formed directly below the light-emitting device, which makes it possible to make the display panel smaller than when driving circuits are provided around the periphery of the display area.

[0463] [Display Panel 100G] FIG. 25 shows a perspective view of the display panel 100G, and FIG. 26A shows a cross-sectional view of the display panel 100G.

[0464] The display panel 100G has a configuration in which a substrate 152 and a substrate 151 are bonded together. In Fig. 25, the substrate 152 is indicated by a dashed line.

[0465] The display panel 100G includes a display portion 162, a connection portion 140, a circuit 164, wiring 165, etc. Fig. 25 shows an example in which an IC 173 and an FPC 172 are mounted on the display panel 100G. Therefore, the configuration shown in Fig. 25 can also be said to be a display module including the display panel 100G, an IC (integrated circuit), and an FPC.

[0466] The connection portion 140 is provided on the outside of the display portion 162. The connection portion 140 can be provided along one side or multiple sides of the display portion 162. There may be one or more connection portions 140. FIG. 25 shows an example in which the connection portion 140 is provided so as to surround the four sides of the display portion. The connection portion 140 electrically connects the common electrode of the light-emitting device and the conductive layer, and can supply a potential to the common electrode.

[0467] The circuit 164 can be, for example, a scanning line driver circuit.

[0468] The wiring 165 has a function of supplying signals and power to the display portion 162 and the circuit 164. The signals and power are input to the wiring 165 from the outside via the FPC 172 or input to the wiring 165 from the IC 173.

[0469] 25 shows an example in which an IC 173 is provided on the substrate 151 by a chip-on-glass (COG) method or a chip-on-film (COF) method. The IC 173 may be, for example, an IC having a scanning line driver circuit or a signal line driver circuit. The display panel 100G and the display module may not include an IC. Alternatively, the IC may be mounted on an FPC by a COF method or the like.

[0470] Figure 26A shows an example of a cross section of the display panel 100G when a portion of the area including the FPC 172, a portion of the circuit 164, a portion of the display section 162, a portion of the connection section 140, and a portion of the area including the end portion are cut away.

[0471] The display panel 100G shown in FIG. 26A includes, between a substrate 151 and a substrate 152, a transistor 201, a transistor 205, a light-emitting device 130R, a light-emitting device 130G, a light-emitting device 130B, a colored layer 132R that transmits red light, a colored layer 132G that transmits green light, and a colored layer 132B that transmits blue light. Light emitted from the light-emitting device 130R is extracted as red light to the outside of the display panel 100G through the colored layer 132R. Similarly, light emitted from the light-emitting device 130G is extracted as green light to the outside of the display panel 100G through the colored layer 132G. Light emitted from the light-emitting device 130B is extracted as blue light to the outside of the display panel 100G through the colored layer 132B.

[0472] The light-emitting devices 130R, 130G, and 130B each have the same structure as the stacked structure shown in Fig. 6B, except for the configuration of the pixel electrodes. For details of the light-emitting devices, see Embodiment 2.

[0473] The light-emitting devices included in the sub-pixels that emit light of each color can all have the same configuration, for example, a configuration that emits white light. Specifically, the EL layers 113 included in the light-emitting devices can have the same configuration. On the other hand, since the EL layers 113 included in each light-emitting device are separated, it is possible to suppress the occurrence of leakage current between the light-emitting devices. This can improve the display quality of the display panel.

[0474] The light-emitting device 130R includes a conductive layer 112a, a conductive layer 126a on the conductive layer 112a, and a conductive layer 129a on the conductive layer 126a. All or some of the conductive layers 112a, 126a, and 129a may be called pixel electrodes.

[0475] Light-emitting device 130G includes conductive layer 112b, conductive layer 126b on conductive layer 112b, and conductive layer 129b on conductive layer 126b.

[0476] Light-emitting device 130B includes conductive layer 112c, conductive layer 126c on conductive layer 112c, and conductive layer 129c on conductive layer 126c.

[0477] The conductive layer 112a is connected to a conductive layer 222b included in the transistor 205 through an opening provided in the insulating layer 214. An end of the conductive layer 126a is located outside an end of the conductive layer 112a. An end of the conductive layer 126a and an end of the conductive layer 129a are aligned or approximately aligned. For example, a conductive layer functioning as a reflective electrode can be used for the conductive layer 112a and the conductive layer 126a, and a conductive layer functioning as a transparent electrode can be used for the conductive layer 129a.

[0478] The conductive layers 112b, 126b, and 129b in the light-emitting device 130G and the conductive layers 112c, 126c, and 129c in the light-emitting device 130B are similar to the conductive layers 112a, 126a, and 129a in the light-emitting device 130R, and therefore will not be described in detail.

[0479] The conductive layers 112a, 112b, and 112c are provided so as to cover the openings provided in the insulating layer 214. A layer 128 is filled in the recesses formed in the conductive layers 112a, 112b, and 112c.

[0480] The layer 128 has a function of planarizing the recesses of the conductive layers 112a, 112b, and 112c. Conductive layers 126a, 126b, and 126c electrically connected to the conductive layers 112a, 112b, and 112c are provided over the conductive layers 112a, 112b, and 112c and the layer 128. Therefore, regions overlapping with the recesses of the conductive layers 112a, 112b, and 112c can also be used as light-emitting regions, thereby increasing the aperture ratio of the pixel.

[0481] The layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used as appropriate for the layer 128. In particular, the layer 128 is preferably formed using an insulating material.

[0482] An insulating layer containing an organic material can be suitably used as the layer 128. For example, acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, precursors of these resins, or the like can be used as the layer 128. Alternatively, a photosensitive resin can be used as the layer 128. The photosensitive resin can be a positive-type material or a negative-type material.

[0483] By using a photosensitive resin, the layer 128 can be formed only through exposure and development steps, and the influence of dry etching, wet etching, etc. on the surfaces of the conductive layers 112a, 112b, and 112c can be reduced. Furthermore, by forming the layer 128 using a negative photosensitive resin, the layer 128 can sometimes be formed using the same photomask (exposure mask) as that used to form the openings in the insulating layer 214.

[0484] The top and side surfaces of the conductive layer 126a and the conductive layer 129a are covered with the EL layer 113. Similarly, the top and side surfaces of the conductive layer 126b and the conductive layer 129b are covered with the EL layer 113. Furthermore, the top and side surfaces of the conductive layer 126c and the conductive layer 129c are covered with the EL layer 113. Therefore, the entire regions where the conductive layers 126a, 126b, and 126c are provided can be used as light-emitting regions for the light-emitting devices 130R, 130G, and 130B, thereby increasing the aperture ratio of the pixel.

[0485] The side surfaces of the EL layer 113 are covered with insulating layers 125 and 127. A sacrificial layer 118 is located between the EL layer 113 and the insulating layer 125 of each of the light-emitting devices 130R, 130G, and 130B. A common layer 114 is provided on the EL layer 113 and the insulating layers 125 and 127, and a common electrode 115 is provided on the common layer 114. The common layer 114 and the common electrode 115 are each a continuous film provided in common to a plurality of light-emitting devices.

[0486] Furthermore, a protective layer 131 is provided on each of the light-emitting devices 130R, 130G, and 130B. By providing the protective layer 131 that covers the light-emitting devices, it is possible to prevent impurities such as water from entering the light-emitting devices, thereby improving the reliability of the light-emitting devices.

[0487] The protective layer 131 and the substrate 152 are bonded via an adhesive layer 142. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light-emitting device. In FIG. 26A , the space between the substrates 152 and 151 is filled with the adhesive layer 142, and a solid sealing structure is applied. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), and a hollow sealing structure may be applied. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting device. Alternatively, the space may be filled with a resin different from the frame-shaped adhesive layer 142.

[0488] In the connection portion 140, a conductive layer 123 is provided on the insulating layer 214. The conductive layer 123 has an example of a stacked structure including a conductive film obtained by processing the same conductive film as the conductive layers 112a, 112b, and 112c, a conductive film obtained by processing the same conductive film as the conductive layers 126a, 126b, and 126c, and a conductive film obtained by processing the same conductive film as the conductive layers 129a, 129b, and 129c. Ends of the conductive layer 123 are covered with a sacrificial layer 118, an insulating layer 125, and an insulating layer 127. A common layer 114 is provided on the conductive layer 123, and a common electrode 115 is provided on the common layer 114. The conductive layer 123 and the common electrode 115 are electrically connected via the common layer 114. The common layer 114 does not necessarily have to be provided in the connection portion 140. In this case, the conductive layer 123 and the common electrode 115 are in direct contact with each other and are electrically connected.

[0489] The display panel 100G is a top-emission type. Light emitted by the light-emitting devices is emitted toward the substrate 152. The substrate 152 is preferably made of a material that is highly transparent to visible light. The pixel electrodes contain a material that reflects visible light, and the counter electrode (common electrode 115) contains a material that transmits visible light.

[0490] The stacked structure from the substrate 151 to the insulating layer 214 corresponds to the layer 101 including the transistor in Embodiment 2.

[0491] The transistor 201 and the transistor 205 are both formed over a substrate 151. These transistors can be manufactured using the same material and through the same process.

[0492] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided over the substrate 151 in this order. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0493] It is preferable that at least one insulating layer covering the transistor is made of a material that is resistant to the diffusion of impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the display panel.

[0494] It is preferable to use an inorganic insulating film for each of the insulating layers 211, 213, and 215. Examples of the inorganic insulating film that can be used include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film may also be used. Two or more of the above insulating films may be stacked.

[0495] An organic insulating layer is suitable for the insulating layer 214, which functions as a planarization layer. Materials that can be used for the organic insulating layer include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins. The insulating layer 214 may also have a stacked structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 preferably functions as an etching protection layer. This can prevent recesses from being formed in the insulating layer 214 during processing of the conductive layer 112a, the conductive layer 126a, the conductive layer 129a, or the like. Alternatively, recesses may be formed in the insulating layer 214 during processing of the conductive layer 112a, the conductive layer 126a, the conductive layer 129a, or the like.

[0496] The transistor 201 and the transistor 205 each include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0497] The structure of the transistor included in the display panel of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0498] The transistor 201 and the transistor 205 have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and the same signal may be supplied to drive the transistor. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0499] The crystallinity of a semiconductor material used for a transistor is not particularly limited, and any of an amorphous semiconductor, a single-crystal semiconductor, and a semiconductor having crystallinity other than a single crystal (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a single-crystal semiconductor or a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0500] The semiconductor layer of the transistor preferably includes a metal oxide (also referred to as an oxide semiconductor). That is, the display panel of this embodiment preferably includes a transistor using a metal oxide for a channel formation region (hereinafter referred to as an OS transistor).

[0501] Examples of crystalline oxide semiconductors include c-axis-aligned crystalline (CAAC)-OS, nanocrystalline (nc)-OS, and the like.

[0502] Alternatively, a transistor using silicon for a channel formation region (Si transistor) may be used. Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor having low temperature polysilicon (LTPS) in a semiconductor layer (hereinafter also referred to as an LTPS transistor) may be used. An LTPS transistor has high field-effect mobility and favorable frequency characteristics.

[0503] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (such as source driver circuits) can be built on the same substrate as the display unit, which simplifies the external circuits mounted on the display panel and reduces component and mounting costs.

[0504] An OS transistor has significantly higher field-effect mobility than a transistor using amorphous silicon. Furthermore, an OS transistor has significantly lower source-drain leakage current in an off state (hereinafter also referred to as off-state current), and can retain charge accumulated in a capacitor connected in series with the transistor for a long period of time. Furthermore, the use of an OS transistor can reduce the power consumption of a display panel.

[0505] The off-state current of the OS transistor per 1 μm of channel width at room temperature is 1 aA (1×10 −１８ A) Below, 1zA (1×10 −２１ A) or less, or 1 yA (1 x 10 −２４ Note that the off-state current of a Si transistor per 1 μm of channel width at room temperature can be 1 fA (1×10 −１５ A) More than 1pA (1×10 −１２Therefore, it can be said that the off-state current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0506] Furthermore, to increase the emission luminance of a light-emitting device included in a pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of a driving transistor included in the pixel circuit. Since an OS transistor has a higher source-drain withstand voltage than a Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the driving transistor included in a pixel circuit, it is possible to increase the amount of current flowing through the light-emitting device and increase the emission luminance of the light-emitting device.

[0507] Furthermore, when the transistor operates in the saturation region, the OS transistor can reduce the change in source-drain current with respect to a change in gate-source voltage compared to a Si transistor. Therefore, by using an OS transistor as a driving transistor included in a pixel circuit, the current flowing between the source and drain can be precisely controlled by changing the gate-source voltage, thereby controlling the amount of current flowing through the light-emitting device. This allows for a greater number of gray levels to be displayed in the pixel circuit.

[0508] Furthermore, in terms of the saturation characteristics of the current that flows when a transistor operates in the saturation region, an OS transistor can pass a more stable current (saturation current) than a Si transistor, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a driving transistor, a stable current can be passed through a light-emitting device, even when the current-voltage characteristics of an EL device vary. In other words, when an OS transistor operates in the saturation region, the source-drain current of the OS transistor remains almost unchanged even when the source-drain voltage increases, thereby stabilizing the light-emitting luminance of the light-emitting device.

[0509] As described above, by using an OS transistor for a driving transistor included in a pixel circuit, it is possible to achieve "suppression of black floating," "increase in light emission luminance," "multiple gradations," "suppression of variations in light-emitting devices," and the like.

[0510] The metal oxide used in the semiconductor layer preferably contains, for example, indium, M (wherein M is one or more elements selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more elements selected from aluminum, gallium, yttrium, and tin.

[0511] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) as the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also referred to as IAZO). Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also referred to as IAGZO).

[0512] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. The atomic ratio of metal elements in such an In-M-Zn oxide may be In:M:Zn=1:1:1 or a composition thereabout, In:M:Zn=1:1:1.2 or a composition thereabout, In:M:Zn=1:3:2 or a composition thereabout, In:M:Zn=1:3:4 or a composition thereabout, In:M:Zn=2:1:3 or a composition thereabout, In:M:Zn=3:1:2 or a composition thereabout, or In:M:Zn=4:2:3. or a composition in the vicinity thereof, In:M:Zn = 4:2:4.1 or a composition in the vicinity thereof, In:M:Zn = 5:1:3 or a composition in the vicinity thereof, In:M:Zn = 5:1:6 or a composition in the vicinity thereof, In:M:Zn = 5:1:7 or a composition in the vicinity thereof, In:M:Zn = 5:1:8 or a composition in the vicinity thereof, In:M:Zn = 6:1:6 or a composition in the vicinity thereof, In:M:Zn = 5:2:5 or a composition in the vicinity thereof, etc. Note that a composition in the vicinity thereof includes a range of ±30% of the desired atomic ratio.

[0513] For example, when describing a composition having an atomic ratio of In:Ga:Zn=4:2:3 or thereabout, this includes a case where, when In is taken as 4, Ga is 1 to 3 and Zn is 2 to 4. Furthermore, when describing a composition having an atomic ratio of In:Ga:Zn=5:1:6 or thereabout, this includes a case where, when In is taken as 5, Ga is more than 0.1 and 2 or less and Zn is 5 to 7. Furthermore, when describing a composition having an atomic ratio of In:Ga:Zn=1:1:1 or thereabout, this includes a case where, when In is taken as 1, Ga is more than 0.1 and 2 or less and Zn is more than 0.1 and 2 or less.

[0514] The transistors included in the circuit 164 may have the same structure as or different from the transistors included in the display portion 162. The transistors included in the circuit 164 may all have the same structure or may have two or more types. Similarly, the transistors included in the display portion 162 may all have the same structure or may have two or more types.

[0515] All the transistors included in the display portion 162 may be OS transistors, all the transistors included in the display portion 162 may be Si transistors, or some of the transistors included in the display portion 162 may be OS transistors and the rest may be Si transistors.

[0516] For example, by using both an LTPS transistor and an OS transistor in the display portion 162, a display panel with low power consumption and high driving capability can be realized. A structure in which an LTPS transistor and an OS transistor are combined is sometimes referred to as LTPO. Note that a more preferable example is a structure in which an OS transistor is used as a transistor that functions as a switch for controlling conduction / non-conduction between wirings, and an LTPS transistor is used as a transistor for controlling current.

[0517] For example, one of the transistors included in the display portion 162 functions as a transistor for controlling a current flowing through a light-emitting device and can also be called a driving transistor. One of the source and drain of the driving transistor is electrically connected to a pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor as the driving transistor. This allows a large current to flow through the light-emitting device in the pixel circuit.

[0518] On the other hand, another transistor included in the display portion 162 functions as a switch for controlling pixel selection / non-selection and can also be called a selection transistor. The gate of the selection transistor is electrically connected to a gate line, and one of the source and drain is electrically connected to a source line (signal line). An OS transistor is preferably used as the selection transistor. This allows the gradation of a pixel to be maintained even when the frame frequency is significantly reduced (for example, 1 fps or less). Therefore, power consumption can be reduced by stopping the driver when displaying a still image.

[0519] As described above, the display panel of one embodiment of the present invention can have a high aperture ratio, high definition, high display quality, and low power consumption.

[0520] A display panel according to one embodiment of the present invention includes an OS transistor and a light-emitting device with a metal maskless (MML) structure. This structure significantly reduces leakage current that may flow through the transistor and leakage current that may flow between adjacent light-emitting devices (also referred to as lateral leakage current or side leakage current). Furthermore, when an image is displayed on the display panel, the viewer can observe one or more of image clarity, image sharpness, high saturation, and a high contrast ratio. The extremely low leakage current that may flow through the transistor and the lateral leakage current between the light-emitting devices significantly reduces light leakage that may occur during black display.

[0521] 26B and 26C show other examples of transistor configurations.

[0522] The transistor 209 and the transistor 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231 including a channel formation region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231i. Furthermore, an insulating layer 218 covering the transistor may be provided.

[0523] 26B shows an example in which the insulating layer 225 covers the top surface and side surfaces of the semiconductor layer 231. The conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215, respectively. One of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

[0524] 26C , the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 but does not overlap with the low-resistance region 231n. For example, the insulating layer 225 is processed using the conductive layer 223 as a mask, thereby manufacturing the structure shown in FIG. 26C . In FIG. 26C , the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings in the insulating layer 215.

[0525] A connection portion 204 is provided in a region of the substrate 151 where the substrate 152 does not overlap. In the connection portion 204, the wiring 165 is electrically connected to the FPC 172 via a conductive layer 166 and a connection layer 242. The conductive layer 166 has an example of a stacked structure including a conductive film obtained by processing the same conductive film as the conductive layers 112a, 112b, and 112c, a conductive film obtained by processing the same conductive film as the conductive layers 126a, 126b, and 126c, and a conductive film obtained by processing the same conductive film as the conductive layers 129a, 129b, and 129c. The conductive layer 166 is exposed on the top surface of the connection portion 204. This allows the connection portion 204 and the FPC 172 to be electrically connected via the connection layer 242.

[0526] It is preferable to provide a light-shielding layer 117 on the surface of the substrate 152 facing the substrate 151. The light-shielding layer 117 can be provided between adjacent light-emitting devices, on the connection section 140, and on the circuit 164. Various optical members can be disposed on the outside of the substrate 152.

[0527] 26A , the colored layers 132R and 132G are provided on the surface of the substrate 152 facing the substrate 151. In FIG. 26A , the colored layers 132R and 132G are provided so as to cover a part of the light-shielding layer 117 when the substrate 152 is used as the reference.

[0528] The materials that can be used for the substrate 120 can be used for the substrate 151 and the substrate 152 .

[0529] The adhesive layer 142 can be made of a material that can be used for the resin layer 122 .

[0530] The connection layer 242 may be an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0531] [Display Panel 100H] The display panel 100H shown in FIG. 27A differs from the display panel 100G mainly in that it is a bottom-emission display panel.

[0532] Light emitted from the light-emitting device is emitted toward the substrate 151. A material that is highly transparent to visible light is preferably used for the substrate 151. On the other hand, the light-transmitting property of the material used for the substrate 152 does not matter.

[0533] It is preferable to form a light-shielding layer 117 between the substrate 151 and the transistor 201 and between the substrate 151 and the transistor 205. Fig. 27A shows an example in which the light-shielding layer 117 is provided over the substrate 151, the insulating layer 153 is provided over the light-shielding layer 117, and the transistors 201, 205, and the like are provided over the insulating layer 153.

[0534] Furthermore, in the display panel 100H, a coloring layer 132R that transmits red light and a coloring layer 132G that transmits green light are provided between the insulating layer 215 and the insulating layer 214. It is preferable that the ends of the coloring layer 132R and the coloring layer 132G each overlap the light-shielding layer 117. Light emitted from the light-emitting device 130R is extracted as red light to the outside of the display panel 100H through the coloring layer 132R. Light emitted from the light-emitting device 130G is extracted as green light to the outside of the display panel 100H through the coloring layer 132G. Although not shown, a coloring layer 132B that transmits blue light is also provided between the insulating layer 215 and the insulating layer 214, and light emitted from the light-emitting device 130B is extracted as blue light to the outside of the display panel 100H through the coloring layer 132B.

[0535] Light-emitting device 130R has a conductive layer 112a, a conductive layer 126a on conductive layer 112a, and a conductive layer 129a on conductive layer 126a.

[0536] Light-emitting device 130G includes conductive layer 112b, conductive layer 126b on conductive layer 112b, and conductive layer 129b on conductive layer 126b.

[0537] The conductive layers 112a, 112b, 126a, 126b, 129a, and 129b are each made of a material that is highly transparent to visible light. The common electrode 115 is preferably made of a material that reflects visible light.

[0538] 26A and 27A show examples in which the upper surface of the layer 128 has a flat portion, but there are no particular limitations on the shape of the layer 128. Modified examples of the layer 128 are shown in Figures 27B to 27D.

[0539] As shown in FIGS. 27B and 27D, the upper surface of layer 128 can be configured to have a recessed shape in the center and its vicinity in cross section, that is, a shape having a concave curved surface.

[0540] Furthermore, as shown in FIG. 27C, the upper surface of layer 128 can be configured to have a shape in which the center and its vicinity bulge in cross section, that is, a shape having a convex curve.

[0541] The upper surface of layer 128 may have one or both of a convex curved surface and a concave curved surface. The number of convex curved surfaces and the number of concave curved surfaces that the upper surface of layer 128 has are not limited, and may be one or more.

[0542] Furthermore, the height of the upper surface of layer 128 and the height of the upper surface of conductive layer 112a may be the same or approximately the same, or may be different from each other. For example, the height of the upper surface of layer 128 may be lower or higher than the height of the upper surface of conductive layer 112a.

[0543] 27B can also be considered an example in which layer 128 is contained within the recess of conductive layer 112a. On the other hand, as shown in FIG. 27D, layer 128 may be present outside the recess of conductive layer 112a, that is, the width of the top surface of layer 128 may be wider than the recess.

[0544] [Display Panel 100J] The display panel 100J shown in FIG. 28 differs from the display panel 100G mainly in that the display panel 100J includes a light receiving device 150.

[0545] The light receiving device 150 includes a conductive layer 112d, a conductive layer 126d on the conductive layer 112d, and a conductive layer 129d on the conductive layer 126d.

[0546] The conductive layer 112 d is connected to a conductive layer 222 b included in the transistor 205 through an opening provided in the insulating layer 214 .

[0547] The upper and side surfaces of the conductive layer 126d and the conductive layer 129d are covered with a layer 155 including an active layer.

[0548] The side surfaces of the layer 155 are covered with insulating layers 125 and 127. A sacrificial layer 118b is located between the layer 155 and the insulating layer 125. A common layer 114 is provided on the layer 155 and the insulating layers 125 and 127, and a common electrode 115 is provided on the common layer 114. The common layer 114 is a continuous film provided in common to the light-receiving device and the light-emitting device.

[0549] The display panel 100J can employ, for example, the pixel layout shown in FIG. 12A described in Embodiment 2 or the pixel layouts shown in FIGS. 16A to 16D described in Embodiment 3. The light receiving device 150 can be provided in at least one of the subpixels PS, X1, and X2. For details of a display panel having a light receiving device, see Embodiment 2.

[0550] This embodiment mode can be combined with other embodiment modes as appropriate.

[0551] In this embodiment, a structural example of a transistor that can be applied to a display panel of one embodiment of the present invention will be described. In particular, the case where a transistor containing silicon as a semiconductor in which a channel is formed will be described.

[0552] One embodiment of the present invention is a display panel including a light-emitting device and a pixel circuit. The display panel can achieve a full-color display panel by including, for example, three types of sub-pixels that emit red (R), green (G), or blue (B) light, respectively.

[0553] It is preferable that all transistors included in a pixel circuit that drives a light-emitting device be transistors having silicon in a semiconductor layer where a channel is formed. Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, it is preferable to use a transistor having low temperature polysilicon (LTPS) in the semiconductor layer (hereinafter also referred to as an LTPS transistor). LTPS transistors have high field-effect mobility and good frequency characteristics.

[0554] By using silicon transistors such as LTPS transistors, circuits that need to be driven at high frequencies (such as source driver circuits) can be built on the same substrate as the display unit, which simplifies the external circuits mounted on the display panel and reduces component and mounting costs.

[0555] At least one of the transistors included in the pixel circuit preferably includes a transistor (hereinafter also referred to as an OS transistor) having a metal oxide (hereinafter also referred to as an oxide semiconductor) as a semiconductor in which a channel is formed. The OS transistor has significantly higher field-effect mobility than a transistor using amorphous silicon. Furthermore, the OS transistor has a significantly smaller off-state current and can hold charge accumulated in a capacitor connected in series with the transistor for a long period of time. Furthermore, the use of an OS transistor can reduce the power consumption of a display panel.

[0556] By using LTPS transistors for some of the transistors included in a pixel circuit and OS transistors for the other transistors, a display panel with low power consumption and high driving capability can be realized. A more preferable example is a configuration in which OS transistors are used as transistors that function as switches for controlling conduction / non-conduction between wirings, and LTPS transistors are used as transistors for controlling current.

[0557] For example, one of the transistors provided in the pixel circuit functions as a transistor for controlling a current flowing through a light-emitting device and can be called a driving transistor. One of the source and drain of the driving transistor is electrically connected to a pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor as the driving transistor. This allows the current flowing through the light-emitting device in the pixel circuit to be increased.

[0558] On the other hand, another transistor provided in the pixel circuit functions as a switch for controlling pixel selection / non-selection and can also be called a selection transistor. The gate of the selection transistor is electrically connected to a gate line, and one of the source and drain is electrically connected to a source line (signal line). It is preferable to use an OS transistor as the selection transistor. This allows the gradation of a pixel to be maintained even when the frame frequency is significantly reduced (for example, 1 fps or less), and therefore power consumption can be reduced by stopping the driver when displaying a still image.

[0559] A more specific configuration example will be described below with reference to the drawings.

[0560] 29A shows a block diagram of a display panel 400. The display panel 400 includes a display portion 404, a driver circuit portion 402, a driver circuit portion 403, and the like.

[0561] The display unit 404 has a plurality of pixels 430 arranged in a matrix. Each pixel 430 has sub-pixels 405R, 405G, and 405B. Each of the sub-pixels 405R, 405G, and 405B has a light-emitting device that functions as a display device.

[0562] The pixel 430 is electrically connected to a wiring GL, a wiring SLR, a wiring SLG, and a wiring SLB. The wirings SLR, SLG, and SLB are each electrically connected to a driver circuit unit 402. The wiring GL is electrically connected to a driver circuit unit 403. The driver circuit unit 402 functions as a source line driver circuit (also referred to as a source driver), and the driver circuit unit 403 functions as a gate line driver circuit (also referred to as a gate driver). The wiring GL functions as a gate line, and the wirings SLR, SLG, and SLB function as source lines.

[0563] The sub-pixel 405R emits red light. The sub-pixel 405G emits green light. The sub-pixel 405B emits blue light. Each sub-pixel has a light-emitting device having an EL layer of the same configuration and a colored layer overlapping the light-emitting device. By providing colored layers that transmit visible light of different colors depending on the sub-pixel, the display panel 400 can display full color. Note that the pixel 430 may also have sub-pixels that emit light of other colors. For example, the pixel 430 may have a sub-pixel that emits white light or a sub-pixel that emits yellow light in addition to the above three sub-pixels.

[0564] The wiring GL is electrically connected to the sub-pixels 405R, 405G, and 405B arranged in the row direction (extension direction of the wiring GL). The wiring SLR, wiring SLG, and wiring SLB are electrically connected to the sub-pixels 405R, 405G, and 405B (not shown) arranged in the column direction (extension direction of the wiring SLR, etc.), respectively.

[0565] [Configuration Example of Pixel Circuit] Figure 29B shows an example of a circuit diagram of a pixel 405 that can be applied to the subpixels 405R, 405G, and 405B. The pixel 405 includes a transistor M1, a transistor M2, a transistor M3, a capacitor C1, and a light-emitting device EL. A wiring GL and a wiring SL are electrically connected to the pixel 405. The wiring SL corresponds to any one of the wirings SLR, SLG, and SLB shown in Figure 29A.

[0566] The transistor M1 has a gate electrically connected to a wiring GL, one of a source and a drain electrically connected to a wiring SL, and the other electrically connected to one electrode of a capacitor C1 and the gate of the transistor M2. The transistor M2 has one of a source and a drain electrically connected to a wiring AL, and the other of a source and a drain electrically connected to one electrode of a light-emitting device EL, the other electrode of the capacitor C1, and one of a source and a drain of the transistor M3. The transistor M3 has a gate electrically connected to a wiring GL, and the other of a source and a drain electrically connected to a wiring RL. The light-emitting device EL has the other electrode electrically connected to a wiring CL.

[0567] A data potential is applied to the wiring SL. A selection signal is applied to the wiring GL. The selection signal includes a potential that turns on a transistor and a potential that turns off a transistor.

[0568] A reset potential is applied to the wiring RL. An anode potential is applied to the wiring AL. A cathode potential is applied to the wiring CL. In the pixel 405, the anode potential is higher than the cathode potential. The reset potential applied to the wiring RL can be a potential such that the potential difference between the reset potential and the cathode potential is smaller than the threshold voltage of the light-emitting device EL. The reset potential can be a potential higher than the cathode potential, the same as the cathode potential, or a potential lower than the cathode potential.

[0569] The transistors M1 and M3 function as switches. The transistor M2 functions as a transistor for controlling the current flowing through the light-emitting device EL. For example, it can be said that the transistor M1 functions as a selection transistor and the transistor M2 functions as a drive transistor.

[0570] Here, it is preferable that all of the transistors M1 to M3 be LTPS transistors. Alternatively, it is preferable that the transistors M1 and M3 be OS transistors and the transistor M2 be an LTPS transistor.

[0571] Alternatively, all of the transistors M1 to M3 may be OS transistors. In this case, one or more of the transistors included in the driver circuit portion 402 and the transistors included in the driver circuit portion 403 may be LTPS transistors, and the remaining transistors may be OS transistors. For example, an OS transistor may be used as a transistor provided in the display portion 404, and an LTPS transistor may be used as a transistor provided in the driver circuit portion 402 and the driver circuit portion 403.

[0572] As the OS transistor, a transistor including an oxide semiconductor for a semiconductor layer in which a channel is formed can be used. The semiconductor layer preferably contains, for example, indium, M (M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more selected from aluminum, gallium, yttrium, and tin. In particular, an oxide containing indium, gallium, and zinc (also referred to as IGZO) is preferably used for the semiconductor layer of the OS transistor. Alternatively, an oxide containing indium, tin, and zinc is preferably used. Alternatively, an oxide containing indium, gallium, tin, and zinc is preferably used.

[0573] A transistor using an oxide semiconductor, which has a wider band gap and a lower carrier density than silicon, can achieve an extremely small off-state current. Therefore, the small off-state current allows charge stored in a capacitor connected in series with the transistor to be held for a long period of time. Therefore, it is preferable to use transistors including oxide semiconductors for the transistors M1 and M3 connected in series with the capacitor C1. Using transistors including oxide semiconductors as the transistors M1 and M3 can prevent charge stored in the capacitor C1 from leaking through the transistor M1 or M3. Furthermore, because charge stored in the capacitor C1 can be held for a long period of time, a still image can be displayed for a long period of time without rewriting data in the pixel 405.

[0574] Although the transistors are shown as n-channel transistors in FIG. 29B, p-channel transistors can also be used.

[0575] In addition, the transistors included in the pixel 405 are preferably formed side by side over the same substrate.

[0576] As the transistor included in the pixel 405, a transistor having a pair of gates overlapping with each other with a semiconductor layer interposed therebetween can be used.

[0577] In a transistor having a pair of gates, when the pair of gates are electrically connected to each other and supplied with the same potential, the on-state current of the transistor is increased and the saturation characteristics are improved. A potential for controlling the threshold voltage of the transistor may be supplied to one of the pair of gates. Supplying a constant potential to one of the pair of gates can improve the stability of the electrical characteristics of the transistor. For example, one gate of the transistor may be electrically connected to a wiring to which a constant potential is supplied, or to its own source or drain.

[0578] 29C is an example of a pixel 405 in which the transistors M1 and M3 each have a pair of gates. The pair of gates of the transistors M1 and M3 are electrically connected. With this configuration, the period for writing data to the pixel 405 can be shortened.

[0579] 29D is an example in which a transistor having a pair of gates is used for the transistor M2 in addition to the transistors M1 and M3. The pair of gates of the transistor M2 are electrically connected. By using such a transistor for the transistor M2, the saturation characteristics are improved, which makes it easier to control the emission luminance of the light-emitting device EL, thereby improving the display quality.

[0580] [Example of Transistor Structure] Hereinafter, an example of a cross-sectional structure of a transistor that can be applied to the display panel will be described.

[0581] Configuration Example 1 FIG. 30A is a cross-sectional view including a transistor 410. FIG.

[0582] The transistor 410 is provided on the substrate 401 and has polycrystalline silicon applied to a semiconductor layer. For example, the transistor 410 corresponds to the transistor M2 of the pixel 405. That is, Fig. 30A illustrates an example in which one of the source and the drain of the transistor 410 is electrically connected to the conductive layer 431 of the light-emitting device.

[0583] The transistor 410 includes a semiconductor layer 411, an insulating layer 412, a conductive layer 413, and the like. The semiconductor layer 411 includes a channel formation region 411i and a low-resistance region 411n. The semiconductor layer 411 includes silicon. The semiconductor layer 411 preferably includes polycrystalline silicon. A part of the insulating layer 412 functions as a gate insulating layer. A part of the conductive layer 413 functions as a gate electrode.

[0584] Note that the semiconductor layer 411 can also include a metal oxide (also referred to as an oxide semiconductor) that exhibits semiconductor characteristics. In this case, the transistor 410 can be called an OS transistor.

[0585] The low-resistance region 411n is a region containing an impurity element. For example, when the transistor 410 is an n-channel transistor, phosphorus, arsenic, or the like may be added to the low-resistance region 411n. On the other hand, when the transistor 410 is a p-channel transistor, boron, aluminum, or the like may be added to the low-resistance region 411n. Furthermore, in order to control the threshold voltage of the transistor 410, the above-mentioned impurities may be added to the channel formation region 411i.

[0586] An insulating layer 421 is provided over a substrate 401. A semiconductor layer 411 is provided over the insulating layer 421. An insulating layer 412 is provided to cover the semiconductor layer 411 and the insulating layer 421. A conductive layer 413 is provided over the insulating layer 412 so as to overlap with the semiconductor layer 411.

[0587] An insulating layer 422 is provided to cover the conductive layer 413 and the insulating layer 412. A conductive layer 414a and a conductive layer 414b are provided over the insulating layer 422. The conductive layer 414a and the conductive layer 414b are electrically connected to the low-resistance region 411n through openings provided in the insulating layer 422 and the insulating layer 412. A part of the conductive layer 414a functions as one of the source electrode and the drain electrode, and a part of the conductive layer 414b functions as the other of the source electrode and the drain electrode. An insulating layer 423 is provided to cover the conductive layer 414a, the conductive layer 414b, and the insulating layer 422.

[0588] A conductive layer 431 functioning as a pixel electrode is provided over the insulating layer 423. The conductive layer 431 is provided over the insulating layer 423 and is electrically connected to the conductive layer 414b in an opening provided in the insulating layer 423. Although not shown here, an EL layer and a common electrode can be stacked over the conductive layer 431.

[0589] 30B shows a transistor 410a having a pair of gate electrodes, which is different from the transistor 410a shown in FIG. 30A in that a conductive layer 415 and an insulating layer 416 are included.

[0590] The conductive layer 415 is provided over the insulating layer 421. An insulating layer 416 is provided to cover the conductive layer 415 and the insulating layer 421. The semiconductor layer 411 is provided so that at least a channel formation region 411i overlaps with the conductive layer 415 with the insulating layer 416 interposed therebetween.

[0591] 30B, part of the conductive layer 413 functions as a first gate electrode, part of the conductive layer 415 functions as a second gate electrode, part of the insulating layer 412 functions as a first gate insulating layer, and part of the insulating layer 416 functions as a second gate insulating layer.

[0592] Here, when the first gate electrode and the second gate electrode are electrically connected, the conductive layer 413 and the conductive layer 415 may be electrically connected through openings provided in the insulating layers 412 and 416 in a region not shown. When the second gate electrode and the source or drain are electrically connected, the conductive layer 414a or the conductive layer 414b may be electrically connected to the conductive layer 415 through openings provided in the insulating layers 422, 412, and 416 in a region not shown.

[0593] 30A or 30B can be applied to all of the transistors constituting the pixel 405. In this case, the transistor 410a may be used for all of the transistors constituting the pixel 405, the transistor 410 may be used for all of the transistors constituting the pixel 405, or the transistor 410 may be used for all of the transistors, or the transistor 410a and the transistor 410 may be used in combination.

[0594] [Structure Example 3] Hereinafter, a structure example including both a transistor in which silicon is used for a semiconductor layer and a transistor in which a metal oxide is used for a semiconductor layer will be described.

[0595] FIG. 30C shows a cross-sectional schematic diagram including transistor 410a and transistor 450.

[0596] For the transistor 410a, refer to the above-described Structure Example 1. Note that although the example using the transistor 410a is shown here, a structure including the transistor 410 and the transistor 450 may be used, or a structure including all of the transistor 410, the transistor 410a, and the transistor 450 may be used.

[0597] The transistor 450 is a transistor in which a metal oxide is used for a semiconductor layer. The configuration shown in Fig. 30C is an example in which the transistor 450 corresponds to the transistor M1 of the pixel 405, and the transistor 410a corresponds to the transistor M2. That is, Fig. 30C shows an example in which one of the source and the drain of the transistor 410a is electrically connected to the conductive layer 431.

[0598] FIG. 30C shows an example in which the transistor 450 has a pair of gates.

[0599] The transistor 450 includes a conductive layer 455, an insulating layer 422, a semiconductor layer 451, an insulating layer 452, a conductive layer 453, and the like. Part of the conductive layer 453 functions as a first gate of the transistor 450, and part of the conductive layer 455 functions as a second gate of the transistor 450. In this case, part of the insulating layer 452 functions as a first gate insulating layer of the transistor 450, and part of the insulating layer 422 functions as a second gate insulating layer of the transistor 450.

[0600] The conductive layer 455 is provided over the insulating layer 412. The insulating layer 422 is provided to cover the conductive layer 455. The semiconductor layer 451 is provided over the insulating layer 422. The insulating layer 452 is provided to cover the semiconductor layer 451 and the insulating layer 422. The conductive layer 453 is provided over the insulating layer 452 and has a region overlapping with the semiconductor layer 451 and the conductive layer 455.

[0601] An insulating layer 426 is provided to cover the insulating layer 452 and the conductive layer 453. A conductive layer 454a and a conductive layer 454b are provided over the insulating layer 426. The conductive layer 454a and the conductive layer 454b are electrically connected to the semiconductor layer 451 through openings provided in the insulating layer 426 and the insulating layer 452. A part of the conductive layer 454a functions as one of the source electrode and the drain electrode, and a part of the conductive layer 454b functions as the other of the source electrode and the drain electrode. An insulating layer 423 is provided to cover the conductive layer 454a, the conductive layer 454b, and the insulating layer 426.

[0602] Here, the conductive layers 414a and 414b electrically connected to the transistor 410a are preferably formed by processing the same conductive film as the conductive layers 454a and 454b. Figure 30C shows a configuration in which the conductive layers 414a, 414b, 454a, and 454b are formed on the same surface (i.e., in contact with the top surface of the insulating layer 426) and contain the same metal element. In this case, the conductive layers 414a and 414b are electrically connected to the low-resistance region 411n through openings provided in the insulating layer 426, the insulating layer 452, the insulating layer 422, and the insulating layer 412. This is preferable because it simplifies the manufacturing process.

[0603] The conductive layer 413 functioning as the first gate electrode of the transistor 410a and the conductive layer 455 functioning as the second gate electrode of the transistor 450 are preferably formed by processing the same conductive film. In Figure 30C, the conductive layer 413 and the conductive layer 455 are formed on the same surface (i.e., in contact with the top surface of the insulating layer 412) and contain the same metal element. This is preferable because it simplifies the manufacturing process.

[0604] In Figure 30C, the insulating layer 452 functioning as the first gate insulating layer of the transistor 450 covers the end portion of the semiconductor layer 451. However, as in the transistor 450a shown in Figure 30D, the insulating layer 452 may be processed so that the top surface shape thereof matches or approximately matches the top surface shape of the conductive layer 453.

[0605] In this specification, the phrase "top surface shapes generally match" refers to the overlap of at least a portion of the contours between stacked layers. For example, this includes cases where the upper and lower layers are processed using the same mask pattern or a portion of the same mask pattern. However, strictly speaking, the contours may not overlap, and the upper layer may be located inside the lower layer, or outside the lower layer. In these cases, the phrase "top surface shapes generally match" also applies.

[0606] Although the transistor 410a corresponds to the transistor M2 and is electrically connected to the pixel electrode in this example, the present invention is not limited to this. For example, the transistor 450 or the transistor 450a may correspond to the transistor M2. In this case, the transistor 410a corresponds to the transistor M1, the transistor M3, or another transistor.

[0607] This embodiment mode can be combined with other embodiment modes as appropriate.

[0608] Embodiment 6 In this embodiment, a light-emitting device that can be used for a display panel of one embodiment of the present invention will be described.

[0609] As shown in FIG. 31A , the light-emitting device has an EL layer 786 between a pair of electrodes (a lower electrode 772 and an upper electrode 788). The EL layer 786 can be composed of multiple layers such as a layer 4420, a light-emitting layer 4411, and a layer 4430. The layer 4420 can have, for example, a layer containing a substance with high electron-injecting properties (electron-injecting layer) and a layer containing a substance with high electron-transporting properties (electron-transporting layer). The light-emitting layer 4411 contains, for example, a light-emitting compound. The layer 4430 can have, for example, a layer containing a substance with high hole-injecting properties (hole-injecting layer) and a layer containing a substance with high hole-transporting properties (hole-transporting layer).

[0610] A structure including the layer 4420, the light-emitting layer 4411, and the layer 4430 provided between a pair of electrodes can function as a single light-emitting unit, and the structure of FIG. 31A is referred to as a single structure in this specification.

[0611] 31B shows a modified example of the EL layer 786 included in the light-emitting device shown in Fig. 31A. Specifically, the light-emitting device shown in Fig. 31B includes a layer 4431 on a lower electrode 772, a layer 4432 on the layer 4431, a light-emitting layer 4411 on the layer 4432, a layer 4421 on the light-emitting layer 4411, a layer 4422 on the layer 4421, and an upper electrode 788 on the layer 4422. For example, when the lower electrode 772 is an anode and the upper electrode 788 is a cathode, the layer 4431 functions as a hole injection layer, the layer 4432 functions as a hole transport layer, the layer 4421 functions as an electron transport layer, and the layer 4422 functions as an electron injection layer. Alternatively, when the lower electrode 772 is a cathode and the upper electrode 788 is an anode, the layer 4431 functions as an electron injection layer, the layer 4432 functions as an electron transport layer, the layer 4421 functions as a hole transport layer, and the layer 4422 functions as a hole injection layer. With such a layer structure, carriers can be efficiently injected into the light-emitting layer 4411, and the efficiency of carrier recombination in the light-emitting layer 4411 can be increased.

[0612] As shown in Figures 31C and 31D, a configuration in which multiple light-emitting layers (light-emitting layers 4411, 4412, and 4413) are provided between layer 4420 and layer 4430 is also a variation of the single structure.

[0613] 31E and 31F, a configuration in which a plurality of light-emitting units (EL layer 786a, EL layer 786b) are connected in series via charge generation layer 4440 is referred to as a tandem structure in this specification. The tandem structure may also be referred to as a stack structure. The tandem structure makes it possible to provide a light-emitting device capable of emitting light with high brightness.

[0614] 31C and 31D , light-emitting materials that emit light of the same color, or even the same light-emitting material, may be used for the light-emitting layers 4411, 4412, and 4413. For example, a light-emitting material that emits blue light may be used for the light-emitting layers 4411, 4412, and 4413. A color conversion layer may be provided as the layer 785 shown in FIG.

[0615] Furthermore, light-emitting materials that emit light of different colors may be used for the light-emitting layer 4411, the light-emitting layer 4412, and the light-emitting layer 4413. When the lights emitted by the light-emitting layer 4411, the light-emitting layer 4412, and the light-emitting layer 4413 are complementary in color, white light can be obtained. A color filter (also referred to as a coloring layer) may be provided as the layer 785 shown in FIG. 31D. When white light passes through the color filter, light of a desired color can be obtained.

[0616] 31E and 31F , the light-emitting layer 4411 and the light-emitting layer 4412 may be made of light-emitting materials that emit light of the same color, or even the same light-emitting material. Alternatively, the light-emitting layer 4411 and the light-emitting layer 4412 may be made of light-emitting materials that emit light of different colors. When the light emitted by the light-emitting layer 4411 and the light emitted by the light-emitting layer 4412 are complementary colors, white light is obtained. FIG. 31F shows an example in which a layer 785 is further provided. As the layer 785, one or both of a color conversion layer and a color filter (colored layer) can be used.

[0617] 31C, 31D, 31E, and 31F, the layer 4420 and the layer 4430 may have a laminated structure consisting of two or more layers, as shown in FIG. 31B.

[0618] A structure that produces different luminescent colors (for example, blue (B), green (G), and red (R)) for each light-emitting device is sometimes called an SBS (Side By Side) structure.

[0619] The light-emitting device can emit light of red, green, blue, cyan, magenta, yellow, white, or the like, depending on the material of the EL layer 786. Furthermore, the color purity can be further improved by providing the light-emitting device with a microcavity structure.

[0620] A light-emitting device that emits white light preferably has a configuration in which the light-emitting layer contains two or more types of light-emitting materials. For example, a light-emitting device that emits white light as a whole can be obtained by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary to each other. Furthermore, when white light is obtained using three or more light-emitting layers, the emission colors of the three or more light-emitting layers can be combined to emit white light as a whole.

[0621] The light-emitting layer preferably contains two or more light-emitting materials that emit light of R (red), G (green), B (blue), Y (yellow), O (orange), etc. Alternatively, it is preferable that the light-emitting layer contains two or more light-emitting materials, and the light emitted by each of the light-emitting materials contains spectral components of two or more colors of R, G, and B.

[0622] This embodiment mode can be combined with other embodiment modes as appropriate.

[0623] Embodiment 7 In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS.

[0624] The electronic device of this embodiment can be used in the display system of one embodiment of the present invention. Specifically, the electronic device can be used as a wearable display device or a terminal in the display system of one embodiment of the present invention.

[0625] The electronic devices of this embodiment include a display panel according to one embodiment of the present invention in a display portion. The display panel according to one embodiment of the present invention can easily achieve high definition and high resolution and can also achieve high display quality. Therefore, the display panel can be used in the display portion of various electronic devices.

[0626] Examples of electronic devices include electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound playback devices.

[0627] In particular, the display panel of one embodiment of the present invention can have high resolution and thus can be suitably used in electronic devices having a relatively small display area. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), and head-mounted wearable devices such as VR devices such as head-mounted displays, AR glasses-type devices, and MR devices.

[0628] The display panel of one embodiment of the present invention preferably has extremely high resolution, such as HD (1280 × 720 pixels), FHD (1920 × 1080 pixels), WQHD (2560 × 1440 pixels), WQXGA (2560 × 1600 pixels), 4K (3840 × 2160 pixels), or 8K (7680 × 4320 pixels). A resolution of 4K, 8K, or higher is particularly preferable. Furthermore, the pixel density (resolution) of the display panel of one embodiment of the present invention is preferably 100 ppi or higher, more preferably 300 ppi or higher, more preferably 500 ppi or higher, more preferably 1000 ppi or higher, more preferably 2000 ppi or higher, more preferably 3000 ppi or higher, more preferably 5000 ppi or higher, and even more preferably 7000 ppi or higher. By using a display panel having either or both of high resolution and high definition, it is possible to further enhance the sense of realism and depth in electronic devices for personal use, such as portable or home use. Furthermore, the screen ratio (aspect ratio) of the display panel of one embodiment of the present invention is not particularly limited. For example, the display panel can support various screen ratios, such as 1:1 (square), 4:3, 16:9, and 16:10.

[0629] The electronic device of this embodiment may have a sensor (including a function to measure force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0630] The electronic device of the present embodiment can have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to execute various software (programs), a wireless communication function, a function to read out programs or data recorded on a recording medium, etc.

[0631] 32A to 32D , examples of wearable devices that can be worn on the head are described. These wearable devices have one or both of a function for displaying AR content and a function for displaying VR content. Note that these wearable devices may also have a function for displaying SR or MR content in addition to AR and VR. Having an electronic device with a function for displaying at least one of AR, VR, SR, and MR content can enhance the user's sense of immersion. The electronic devices shown in FIGS. 32A to 32D are suitable as wearable display devices in a display system according to one embodiment of the present invention.

[0632] The electronic device 700A shown in FIG. 32A and the electronic device 700B shown in FIG. 32B each have a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0633] A display panel of one embodiment of the present invention can be applied to the display panel 751. Therefore, an electronic device capable of displaying images with extremely high resolution can be provided.

[0634] The electronic device 700A and the electronic device 700B can each project an image displayed on the display panel 751 onto a display area 756 of the optical member 753. Because the optical member 753 is translucent, the user can see the image displayed in the display area superimposed on a transmitted image visually recognized through the optical member 753. Therefore, the electronic device 700A and the electronic device 700B are each electronic devices capable of AR display.

[0635] Electronic device 700A and electronic device 700B may be provided with a camera capable of capturing an image in front of them as an imaging unit. Furthermore, electronic device 700A and electronic device 700B may each be provided with an acceleration sensor such as a gyro sensor, thereby detecting the orientation of the user's head and displaying an image corresponding to that orientation in display area 756.

[0636] The communication unit has a wireless communication device, and can supply a video signal, etc. Instead of or in addition to the wireless communication device, a connector to which a cable through which a video signal and a power supply potential are supplied may be provided.

[0637] Furthermore, the electronic device 700A and the electronic device 700B are provided with batteries, which can be charged wirelessly and / or by wire.

[0638] The housing 721 may be provided with a touch sensor module. The touch sensor module has a function of detecting a touch on the outer surface of the housing 721. The touch sensor module can detect a tap operation or a slide operation by the user and perform various processes. For example, a tap operation can perform a process such as pausing or resuming a video, and a slide operation can perform a process such as fast-forwarding or fast-rewinding. Furthermore, providing a touch sensor module on each of the two housings 721 can expand the range of operations.

[0639] Various touch sensors can be used as the touch sensor module. For example, various types of touch sensors can be used, such as a capacitance type, a resistive film type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, and an optical type. In particular, it is preferable to use a capacitance type or an optical type sensor in the touch sensor module.

[0640] When an optical touch sensor is used, a photoelectric conversion device (also called a photoelectric conversion element) can be used as the light receiving device (also called a light receiving element). The active layer of the photoelectric conversion device can be made of either or both of an inorganic semiconductor and an organic semiconductor.

[0641] The electronic device 800A shown in Figure 32C and the electronic device 800B shown in Figure 32D each have a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0642] A display panel of one embodiment of the present invention can be applied to the display portion 820. Therefore, an electronic device capable of displaying images with extremely high definition can be provided, which allows a user to feel a high sense of immersion.

[0643] The display unit 820 is provided inside the housing 821 at a position that can be viewed through the lens 832. In addition, by displaying different images on the pair of display units 820, it is possible to perform three-dimensional display using parallax.

[0644] The electronic device 800A and the electronic device 800B can be said to be electronic devices for VR. A user wearing the electronic device 800A or the electronic device 800B can view an image displayed on the display unit 820 through the lens 832.

[0645] It is preferable that electronic device 800A and electronic device 800B each have a mechanism that can adjust the left and right positions of lens 832 and display unit 820 so that they are optimally positioned according to the position of the user's eyes. It is also preferable that electronic device 800A and electronic device 800B each have a mechanism that can adjust the focus by changing the distance between lens 832 and display unit 820.

[0646] The mounting unit 823 allows the user to wear the electronic device 800A or the electronic device 800B on the head. Note that, in Fig. 32C and other figures, the mounting unit 823 is shaped like the temples of glasses (also called joints or temples), but is not limited to this. The mounting unit 823 may be shaped like a helmet or a band, for example, as long as it can be worn by the user.

[0647] The imaging unit 825 has a function of acquiring external information. Data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used for the imaging unit 825. Furthermore, multiple cameras may be provided to support multiple angles of view, such as telephoto and wide-angle.

[0648] Although an example including the imaging unit 825 is shown here, a distance measuring sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object may be provided. That is, the imaging unit 825 is one aspect of the detection unit. As the detection unit, for example, an image sensor or a range image sensor such as a LIDAR (Light Detection and Ranging) can be used. By using an image obtained by the camera and an image obtained by the range image sensor, more information can be obtained, enabling more accurate gesture operations.

[0649] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone. For example, a configuration having such a vibration mechanism can be applied to one or more of the display unit 820, the housing 821, and the wearing unit 823. This allows a user to enjoy video and audio simply by wearing the electronic device 800A, without the need for separate audio equipment such as headphones, earphones, or speakers.

[0650] The electronic device 800A and the electronic device 800B may each have an input terminal to which a cable can be connected for supplying a video signal from a video output device or the like and power for charging a battery provided in the electronic device.

[0651] The electronic device of one embodiment of the present invention may have a function of wireless communication with an earphone 750. The earphone 750 has a communication unit (not shown) and has a wireless communication function. The earphone 750 can receive information (e.g., audio data) from the electronic device through the wireless communication function. For example, the electronic device 700A shown in FIG. 32A has a function of transmitting information to the earphone 750 through the wireless communication function. Furthermore, for example, the electronic device 800A shown in FIG. 32C has a function of transmitting information to the earphone 750 through the wireless communication function.

[0652] The electronic device may also have an earphone unit. Electronic device 700B shown in Fig. 32B has earphone unit 727. For example, earphone unit 727 and the control unit may be configured to be connected to each other by wire. Part of the wiring connecting earphone unit 727 and the control unit may be disposed inside housing 721 or attachment unit 723.

[0653] Similarly, the electronic device 800B shown in Fig. 32D has an earphone unit 827. For example, the earphone unit 827 and the control unit 824 can be configured to be connected to each other by wire. Part of the wiring connecting the earphone unit 827 and the control unit 824 may be disposed inside the housing 821 or the attachment unit 823. The earphone unit 827 and the attachment unit 823 may also have magnets. This allows the earphone unit 827 to be fixed to the attachment unit 823 by magnetic force, which is preferable as it makes storage easier.

[0654] The electronic device may have an audio output terminal to which earphones or headphones can be connected. The electronic device may also have one or both of an audio input terminal and an audio input mechanism. For example, a sound collection device such as a microphone can be used as the audio input mechanism. By having the audio input mechanism, the electronic device may be endowed with the functionality of a so-called headset.

[0655] As described above, as electronic devices of one embodiment of the present invention, both glasses-type devices (such as the electronic devices 700A and 700B) and goggle-type devices (such as the electronic devices 800A and 800B) are suitable.

[0656] Furthermore, the electronic device of one embodiment of the present invention can transmit data to earphones in a wired or wireless manner.

[0657] The electronic devices illustrated in FIGS. 33 and 34 are suitable for use as terminals in the display systems of one embodiment of the present invention.

[0658] The electronic device 6500 shown in FIG. 33A is a portable information terminal that can be used as a smartphone.

[0659] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display portion 6502 has a touch panel function.

[0660] The display panel of one embodiment of the present invention can be applied to the display portion 6502 .

[0661] FIG. 33B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0662] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, optical members 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0663] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by adhesive layers (not shown).

[0664] In a region outside the display portion 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0665] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while keeping the thickness of the electronic device small. Furthermore, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0666] 33C shows an example of a television set. A television set 7100 has a display portion 7000 built into a housing 7101. Here, the housing 7101 is supported by a stand 7103.

[0667] A display panel according to one embodiment of the present invention can be applied to the display portion 7000 .

[0668] 33C can be operated using operation switches provided on the housing 7101 and a separate remote control 7111. Alternatively, the display portion 7000 may be provided with a touch sensor, and the television set 7100 may be operated by touching the display portion 7000 with a finger or the like. The remote control 7111 may have a display portion that displays information output from the remote control 7111. Using operation keys or a touch panel provided on the remote control 7111, the channel and volume can be controlled, and an image displayed on the display portion 7000 can be controlled.

[0669] The television device 7100 is configured to include a receiver, a modem, and the like. Ordinary television broadcasts can be received using the receiver. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from a sender to a receiver) or two-way (between a sender and a receiver, or between receivers, etc.) information communication.

[0670] 33D shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, and an external connection port 7214. The housing 7211 includes a display portion 7000.

[0671] A display panel according to one embodiment of the present invention can be applied to the display portion 7000 .

[0672] 33E and 33F show an example of digital signage.

[0673] 33E includes a housing 7301, a display portion 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0674] 33F shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0675] 33E and 33F, the display panel of one embodiment of the present invention can be applied to the display portion 7000.

[0676] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it will attract people's attention, which can increase the advertising effectiveness of, for example, advertisements.

[0677] Applying a touch panel to the display unit 7000 is preferable because it not only displays images or videos on the display unit 7000 but also allows the user to intuitively operate it. Furthermore, when used to provide information such as route information or traffic information, the intuitive operation can improve usability.

[0678] 33E and 33F , the digital signage 7300 or the digital signage 7400 is preferably capable of wirelessly linking with an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user. For example, advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. By operating the information terminal 7311 or the information terminal 7411, the display on the display unit 7000 can be switched.

[0679] Furthermore, the digital signage 7300 or the digital signage 7400 can be made to run a game using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller), thereby allowing an unspecified number of users to simultaneously participate in and enjoy the game.

[0680] The electronic device shown in Figures 34A to 34G has a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including a function to measure force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 9008, etc.

[0681] 34A to 34G, the display device of one embodiment of the present invention can be applied to the display portion 9001.

[0682] The electronic devices shown in Figures 34A to 34G have various functions. For example, they may have a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, or time, a function to control processing using various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. Note that the functions of the electronic devices are not limited to these, and they may have various other functions. The electronic devices may have multiple display units. Furthermore, the electronic devices may have a function to include a camera or the like to capture still images or videos and store them on a recording medium (external or built-in to the camera), a function to display the captured images on a display unit, etc.

[0683] Details of the electronic device shown in Figures 34A to 34G will be described below.

[0684] FIG. 34A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 can be used as, for example, a smartphone. Note that the mobile information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like. The mobile information terminal 9101 can display text and image information on multiple surfaces. FIG. 34A shows an example in which three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming emails, SNS messages, phone ca...

Claims

1. It has a display unit, a first communication unit, and a mounting unit, The mounting unit has a function of being mounted on the head, The first communication unit has a wireless communication function, The display unit is capable of full-color display, The display unit has a first sub-pixel and a second sub-pixel, The first sub-pixel has a first light-emitting device and a first color filter layer that transmits blue light, The second sub-pixel has a second light-emitting device and a second color filter layer that transmits light of a color different from that of the first color filter layer, The first light-emitting device has a first pixel electrode, a first EL layer on the first pixel electrode, and a common electrode on the first EL layer, The second light-emitting device has a second pixel electrode, the first EL layer on the second pixel electrode, and the common electrode on the first EL layer, The first EL layer has a first light-emitting unit on the first pixel electrode, a charge generation layer on the first light-emitting unit, and a second light-emitting unit on the charge generation layer, When the intensity of the first emission peak with a wavelength of 400 nm or more and less than 500 nm in the emission spectrum when the display unit is blue-displayed at a first luminance is set to 1, the intensity of the second emission peak with a wavelength of 500 nm or more and 700 nm or less in the emission spectrum is 0.5 or less, The first luminance is higher than 0 cd / m ２ and less than 1 cd / m ２ The display device is any value in between.

2. It has a display unit, a first communication unit, and a mounting unit, The mounting unit has a function of being mounted on the head, The first communication unit has a wireless communication function, The display unit is capable of full-color display, The display unit has a first sub-pixel and a second sub-pixel, The first sub-pixel has a first light-emitting device and a first color filter layer that transmits blue light, The second sub-pixel has a second light-emitting device and a second color filter layer that transmits light of a color different from that of the first color filter layer, The first light-emitting device has a first pixel electrode, a first EL layer on the first pixel electrode, and a common electrode on the first EL layer, The second light-emitting device has a second pixel electrode, a second EL layer on the second pixel electrode, and the common electrode on the second EL layer, The first EL layer and the second EL layer have the same configuration, The first EL layer and the second EL layer are separated from each other, The first EL layer has a first light-emitting unit on the first pixel electrode, a charge generation layer on the first light-emitting unit, and a second light-emitting unit on the charge generation layer. When the display unit is blue-displayed at a first luminance, when the intensity of a first emission peak having a wavelength of 400 nm or more and less than 500 nm in the emission spectrum is set to 1, the intensity of a second emission peak having a wavelength of 500 nm or more and 700 nm or less in the emission spectrum is 0.5 or less. The first luminance is higher than 0 cd / m ２ and lower than 1 cd / m ２ The display device has any value in between.

3. In claim 2, The first light-emitting device has a common layer between the first EL layer and the common electrode. The second light-emitting device has the common layer between the second EL layer and the common electrode. The common layer has at least one of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer, a display device.

4. In claim 2, The display unit has a first insulating layer. The first insulating layer covers side surfaces of the first EL layer and side surfaces of the second EL layer. The common electrode is located on the first insulating layer, a display device.

5. In claim 4, The display unit has a second insulating layer. The first insulating layer has an inorganic material. The second insulating layer has an organic material and overlaps side surfaces of the first EL layer and side surfaces of the second EL layer via the first insulating layer, a display device.

6. In any one of claims 1 to 5, The fineness of the display unit is 1000 ppi or more, a display device.

7. In any one of claims 1 to 6, The first sub-pixel has a lens overlapping the first light-emitting device and the first color filter layer, a display device.

8. In any one of claims 1 to 7, The first pixel electrode has a material that reflects visible light, a display device.

9. In any one of claims 1 to 8, The first sub-pixel has a reflective layer. The first pixel electrode has a material that transmits visible light. The first pixel electrode is located between the reflective layer and the first EL layer, a display device.

10. In any one of claims 1 to 9, An end portion of the first pixel electrode has a tapered shape, a display device.

11. In any one of claims 1 to 10, The first EL layer covers an end portion of the first pixel electrode, a display device.

12. A server, a terminal device, and the display device according to any one of claims 1 to 11, wherein the terminal device has a second communication unit and a third communication unit, the second communication unit has a function of communicating with the server via a network, and the third communication unit has a function of communicating with the first communication unit. A display system.