Plasma processing method and plasma processing apparatus

Abstract

The present invention provides a technology which reduces variation in the distribution of ion flux. The present invention provides a plasma processing method that performs plasma processing on a substrate in a plasma processing apparatus, which comprises a chamber and a substrate supporting unit that is arranged within the chamber, by generating a plasma within the chamber. This plasma processing method comprises: (a) a step in which first distribution data are stored in advance, the first distribution data being related to the distribution of ion flux which is generated between the plasma that is generated within the chamber and a first substrate that is arranged on the substrate supporting unit; (b-a) a step in which a second substrate is arranged on the substrate supporting unit; and (b-b) a plasma processing step in which plasma processing is performed on the second substrate by generating a plasma within the chamber on the basis of the first distribution data.

Description

Plasma processing method and plasma processing apparatus

[0001] SUMMARY OF THE INVENTION Exemplary embodiments of the present disclosure relate to a plasma processing method and a plasma processing apparatus.

[0002] As a technique for measuring plasma on the wafer surface, there is an on-wafer monitoring system described in Patent Document 1.

[0003] Japanese Patent Application Laid-Open No. 2003-282546

[0004] The present disclosure provides techniques for reducing the variation in ion flux distribution.

[0005] In one exemplary embodiment of the present disclosure, there is provided a plasma processing method for a plasma processing apparatus having a chamber and a substrate support part disposed in the chamber, in which plasma is generated in the chamber and plasma processing is performed on a substrate, the plasma processing method including: (a) a step of pre-storing first distribution data, which is data regarding a distribution of ion flux generated between the plasma generated in the chamber and a first substrate disposed on the substrate support part; (b-a) a step of disposing a second substrate on the substrate support part; and (b-b) a plasma processing step of generating plasma in the chamber based on the first distribution data and performing plasma processing on the second substrate.

[0006] According to one exemplary embodiment of the present disclosure, a technique for reducing variations in ion flux distribution can be provided.

[0007] 1 is a diagram for explaining an example of the configuration of a plasma processing system. FIG. 1 is a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus. FIG. 2 is a diagram showing an example of the top view of a substrate support 11. FIG. 3 is a diagram showing an example of a cross section of the substrate support 11. FIG. 4 is a block diagram showing an example of the configuration of a control board 80. FIG. 5 is a flowchart showing a plasma processing method according to an exemplary embodiment. FIG. 6 is a flowchart showing an example of process ST1. FIG. 7 is a flowchart showing an example of process ST2. FIG. 8 is a diagram showing an example of reference distribution data. FIG. 9 is a flowchart showing an example of process ST3. FIG. 10 is a diagram showing an example of first distribution data. FIG. 11 is a flowchart showing an example of process ST4. FIG. 12 is a diagram showing an example of ion flux generated between a substrate W and a ring assembly 112 and plasma. FIG. 13 is a diagram showing an example of the distribution of ion flux Γi. FIG. 14 is a diagram showing an example of ion flux generated between a substrate W and a ring assembly 112 and plasma. FIG. 15 is a flowchart showing an example of an in-plane correction process. FIG. 16 is a diagram for explaining another example of the configuration of a capacitively coupled plasma processing apparatus.

[0008] Hereinafter, each embodiment of the present disclosure will be described.

[0009] In one exemplary embodiment, a plasma processing method is provided for a plasma processing apparatus having a chamber and a substrate support disposed within the chamber, in which plasma is generated within the chamber and a plasma processing is performed on a substrate, the plasma processing method including: (a) storing in advance first distribution data, the first distribution data being data relating to a distribution of ion flux generated between the plasma generated within the chamber and a first substrate disposed on the substrate support; (b-a) disposing a second substrate on the substrate support; and (b-b) generating plasma within the chamber based on the first distribution data and performing a plasma processing on the second substrate.

[0010] In one exemplary embodiment, the storing step (a) includes the steps of: (a-a) placing the first substrate on a substrate support; (a-b) generating plasma in the chamber and performing plasma processing on the first substrate; (a-c) supplying power to each of a plurality of heaters arranged in the substrate support; (a-d) acquiring the power supplied to each of the plurality of heaters while the plasma is generated in the chamber; and (a-e) calculating first distribution data based on the power acquired for each of the plurality of heaters in the first power acquiring step.

[0011] In one exemplary embodiment, the method further includes: (c-a) placing a reference substrate on a substrate support; (c-b) generating plasma in the chamber and performing plasma processing on the reference substrate; (c-c) supplying power to each of a plurality of heaters arranged in the substrate support; (c-d) acquiring the power supplied to each of the plurality of heaters while plasma is generated in the chamber; and (c-e) calculating reference distribution data, which is data indicating the distribution of ion flux generated between the reference substrate and the plasma, the reference distribution data being calculated based on the power acquired for each of the plurality of heaters in the reference power acquisition step; and in the plasma processing step of (b-b), the plasma is generated based on the reference distribution data and the first distribution data.

[0012] In one exemplary embodiment, the plasma processing step (bb) includes generating a plasma in the chamber based on a difference between the reference distribution data and the first distribution data.

[0013] In one exemplary embodiment, the plasma processing apparatus further includes a memory unit that stores a table that associates (1) the amount of change in the distribution of electron density of the plasma generated in the chamber with (2) the amount of change in the distribution of ion flux occurring between the substrate placed on the substrate support and the plasma generated in the chamber, and the plasma processing step (b-b) includes a step of controlling the distribution of electron density by referring to the table stored in the memory unit based on the difference between the reference distribution data and the first distribution data.

[0014] In one exemplary embodiment, the plasma processing apparatus further includes a plurality of electromagnets arranged opposite the substrate support, and the step of controlling the distribution of electron density includes controlling at least one of the current and the voltage supplied to the plurality of electromagnets to control the distribution of electron density.

[0015] In one exemplary embodiment, the substrate support has a substrate support surface that supports a substrate, the substrate support surface including a plurality of support regions, and a plurality of heaters are disposed on the substrate support in each of the plurality of support regions.

[0016] In one exemplary embodiment, the reference substrate, the first substrate, and the second substrate each include a mask film having the same opening pattern.

[0017] In one exemplary embodiment, the plasma processing apparatus further includes a memory unit that stores a table that associates (1) the amount of change in the distribution of bias voltage occurring between the substrate placed on the substrate support unit and the plasma generated in the chamber with (2) the amount of change in the distribution of ion flux occurring between the substrate placed on the substrate support unit and the plasma generated in the chamber, and the plasma processing step (b-b) includes a step of controlling the distribution of bias voltage by referring to the table stored in the memory unit based on the difference between the reference distribution data and the first distribution data.

[0018] In one exemplary embodiment, the plasma processing apparatus further comprises a ring assembly disposed around the substrate support, and the step of controlling the distribution of the bias voltage includes controlling a voltage applied to the ring assembly to control the distribution of the bias voltage.

[0019] In one exemplary embodiment, the plasma processing apparatus further comprises a ring assembly disposed around the substrate support and an actuator configured to adjust the height of the ring assembly relative to the height of the substrate support, and the step of controlling the distribution of the bias voltage includes adjusting the height of the ring assembly to control the distribution of the bias voltage.

[0020] In one exemplary embodiment, the method further includes a step of generating a table, and the step of generating the table includes a step of placing a dummy substrate on a substrate support portion; a step of controlling the supply power supplied to each of the plurality of heaters so that the temperature of each of the plurality of heaters becomes a predetermined temperature while the dummy substrate is placed on the substrate support portion; a step of placing the dummy substrate on the substrate support portion; a step of generating plasma in the chamber and performing plasma processing on the dummy substrate; a step of changing the distribution of electron density of the plasma to obtain the power supplied to the plurality of heaters while performing plasma processing on a substrate including a mask film; and a step of correlating (1) the amount of change in the distribution of electron density of the plasma generated in the chamber with (2) the amount of change in the distribution of ion flux occurring between the substrate placed on the substrate support portion and the plasma generated in the chamber and storing them in the table.

[0021] In one exemplary embodiment, a plasma processing apparatus is provided that includes a chamber, a substrate support disposed within the chamber, and a controller, wherein the controller (a) pre-stores first distribution data that is data relating to the distribution of ion flux generated between plasma generated within the chamber and a first substrate disposed on the substrate support, (b-a) places a second substrate on the substrate support, and (b-b) generates plasma within the chamber based on the first distribution data to perform plasma processing on the second substrate.

[0022] Hereinafter, each embodiment of the present disclosure will be described in detail with reference to the drawings. In each drawing, the same or similar elements are designated by the same reference numerals, and redundant explanations will be omitted. Unless otherwise specified, the positional relationships, such as up, down, left, and right, will be described based on the positional relationships shown in the drawings. The dimensional ratios in the drawings do not represent actual ratios, and the actual ratios are not limited to the ratios shown in the drawings.

[0023] FIG. 1 is a diagram illustrating an exemplary configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0024] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma generated in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), surface wave plasma (SWP), or the like. Various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Thus, AC signals include radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0025] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. This program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0026] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0027] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, sidewalls 10a and 10b of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0028] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0029] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power supply 31 and / or a DC power supply 32, which will be described later, may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal, which will be described later, is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Furthermore, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0030] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0031] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 111a. Details of the temperature adjustment module will be described later with reference to FIG. 4.

[0032] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0033] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0034] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0035] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0036] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0037] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0038] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0039] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0040] Fig. 3 is a diagram showing an example of the top view of the substrate support 11. As shown in Fig. 3, the substrate support 11 includes a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. The central region 111a includes a plurality of zones 111c as indicated by dashed lines in Fig. 3. In this embodiment, the temperature adjustment module can control the temperature of the substrate W or the substrate support 11 on a zone-by-zone basis. The number of zones 111c and the area and shape of each zone 111c may be set as appropriate depending on the conditions required for temperature control of the substrate W.

[0041] FIG. 4 is a diagram showing an example of a cross section of the substrate support 11. FIG. 4 shows a portion of the cross section of the substrate support 11 taken along line AA' in FIG. 3. As shown in FIG. 4, the substrate support 11 includes an electrostatic chuck 1111, a base 1110, and a control board 80. The electrostatic chuck 1111 includes multiple heaters 200 and multiple resistors 201 therein. In this embodiment, in each zone 111c shown in FIG. 2, one heater 200 and one resistor 201 are disposed inside the electrostatic chuck 1111. In each zone 111c, the resistor 201 is disposed near the heater 200. In one example, the resistor 201 may be disposed between the heater 200 and the base 1110, closer to the heater 200 than the base 1110. The resistor 201 is configured so that its resistance value changes depending on the temperature. In one example, the resistor 201 may be a thermistor.

[0042] The base 1110 has one or more through holes 90 penetrating from the upper surface (the surface facing the electrostatic chuck 1111) to the lower surface (the surface facing the control board 80) of the base 1110. The multiple heaters 200 and the multiple resistors 201 can be electrically connected to the control board 80 via the through holes 90. In the present embodiment, a connector 91 is fitted into one end of the upper surface of the through hole 90, and a connector 92 is fitted into one end of the lower surface of the through hole 90. The multiple heaters 200 and the multiple resistors 201 are electrically connected to the connector 91. The multiple heaters 200 and the multiple resistors 201 may be connected to the connector 91 via wiring arranged inside the electrostatic chuck 1111, for example. The connector 92 is electrically connected to the control board 80. Furthermore, multiple wirings 93 are arranged in the through hole 90 to electrically connect the connector 91 and the connector 92. This allows the plurality of heaters 200 and the plurality of resistors 201 to be electrically connected to the control board 80 via the through holes 90. The connector 92 may also function as a support member that fixes the control board 80 to the base 1110.

[0043] The control board 80 is a board on which elements for controlling the plurality of heaters 200 and / or the plurality of resistors 201 are arranged. The control board 80 can be arranged facing the lower surface of the base 1110 and parallel to the lower surface. The control board 80 may be arranged surrounded by a conductive member. The control board 80 may be supported on the base 1110 by a support member other than the connector 92.

[0044] The control board 80 may be electrically connected to the power supply unit 70 via wiring 73. That is, the power supply unit 70 may be electrically connected to the plurality of heaters 200 via the control board 80. The power supply unit 70 generates power to be supplied to the plurality of heaters 200. As a result, the power supplied from the power supply unit 70 to the control board 80 may be supplied to the plurality of heaters 200 via the connector 92, wiring 93, and connector 91. An RF filter for reducing RF may be disposed between the power supply unit 70 and the control board 80. The RF filter may be provided outside the plasma processing chamber 10.

[0045] The control board 80 can be communicatively connected to the control unit 2 via wiring 75. The wiring 75 may be optical fiber. In this case, the control board 80 communicates with the control unit 2 by optical communication. The wiring 75 may be metal wiring.

[0046] 5 is a block diagram showing an example of the configuration of the control board 80. The control board 80 is provided with a control unit 81, and, as examples of elements, a plurality of supply units 82 and a plurality of measurement units 83. The plurality of supply units 82 and the plurality of measurement units 83 are provided corresponding to the plurality of heaters 200 and the plurality of resistors 201, respectively. One supply unit 82 and one measurement unit 83 may be provided for one heater 200 and one resistor 201.

[0047] Each measuring unit 83 generates a voltage based on the resistance value of each resistor 201 provided corresponding to each measuring unit 83, and supplies the voltage to the control unit 81. The measuring unit 83 may be configured to convert the voltage generated in accordance with the resistance value of the resistor 201 into a digital signal and output the digital signal to the control unit 81.

[0048] The control unit 81 controls the temperature of the substrate W in each zone 111c. The control unit 81 controls the power supply to the heaters 200 based on the set temperature received from the control unit 2 and the voltage indicated by the digital signal received from the measurement unit 83. As an example, the control unit 81 calculates the temperature of the resistor 201 (hereinafter also referred to as the "measured temperature") based on the voltage indicated by the digital signal received from the measurement unit 83. The control unit 81 then controls each supply unit 82 based on the set temperature and the measured temperature. Based on the control of the control unit 81, each supply unit 82 switches whether or not to supply the power supplied from the power supply unit 70 to each heater 200. Furthermore, based on the control of the control unit 81, each supply unit 82 may increase or decrease the power supplied from the power supply unit 70 to each heater 200. This allows the substrate W, the electrostatic chuck 1111, and / or the base 1110 to be maintained at a predetermined temperature.

[0049] <Example of Plasma Processing Method> Fig. 6 is a flowchart showing a plasma processing method (hereinafter also referred to as "this processing method") according to one exemplary embodiment. As shown in Fig. 6, this processing method includes a step of generating a table (ST1), a step of plasma processing a reference substrate to obtain reference distribution data (ST2), a step of plasma processing a first process substrate (ST3), and a step of plasma processing a second process substrate (ST4). The processing in each step may be performed by the plasma processing system shown in Fig. 1. In the following, as an example, a control unit 2 controls each unit of the plasma processing apparatus 1 to perform this processing method.

[0050] (Process ST1: Table Generation) Fig. 7 is a flowchart showing an example of process ST1. The table generated in process ST1 may be a table that stores a correspondence between a change in one or more parameters related to plasma generation and a change in ion flux distribution resulting from the change in the parameter. The ion flux is an ion flux generated between the substrate W placed on the substrate support 11 and the plasma generated in the plasma processing chamber 10. The ion flux may also include an ion flux generated between the ring assembly 112 and the plasma generated in the plasma processing chamber 10.

[0051] For example, the parameter may be a parameter that can change the distribution of electron density generated in the plasma processing chamber 10, such as the magnetic flux density of a magnetic field applied in the plasma processing chamber 10. As an example, the plasma processing apparatus 1 may have a plurality of electromagnets configured to apply a magnetic field in the plasma processing chamber 10 (see FIG. 16 ), in which case the parameter may be, for example, the current and / or voltage supplied to the plurality of electromagnets.

[0052] Furthermore, for example, the parameter may be a parameter that can change the distribution of bias voltage generated between the substrate W placed on the substrate support 11 and the plasma generated in the plasma processing chamber 10. For example, the electrostatic chuck 1111 may have an electrode configured to apply a voltage to the ring assembly 112, and in this case, the parameter may be the voltage applied to the ring assembly 112.

[0053] The parameter may also be a parameter related to the hardware configuration of the plasma processing apparatus 1. As an example, the parameter may be the height of the ring assembly 112. The height of the ring assembly 112 may be the height of the surface of the ring assembly 112 relative to the substrate support surface of the substrate support 11 or the height of the substrate W.

[0054] 7, step ST1 includes a step of placing a dummy substrate (ST11), a step of setting the temperature of the dummy substrate (ST12), a step of setting plasma processing parameters (ST13), a step of generating plasma (ST14), a step of acquiring the supply power of each heater (ST15), a step of confirming the acquisition of the supply power (ST16), and a step of generating a table (ST17). In one example, step ST1 can be executed when a predetermined operation is performed in the plasma processing apparatus 1 to instruct the start of table generation.

[0055] First, in step ST11, a dummy substrate is placed on the substrate support part 11. For example, the dummy substrate may be a substrate on which no film is formed. For example, the dummy substrate may be a silicon wafer. Next, in step ST12, the temperature of the dummy substrate is set. For example, the control unit 2 controls the control unit 81 disposed on the control board 80 so that the temperature of the dummy substrate in each zone 111c becomes the set temperature. The control unit 2 also acquires the power supplied to each heater 200 when the temperature of the dummy substrate is stabilized at the set temperature and stores the power in the memory part 2a. The state in which the temperature of the dummy substrate is stabilized at the set temperature may be determined as a predetermined time after the dummy substrate is placed on the substrate support part 11. Alternatively, the power supplied to each heater 200 may be acquired and stored in the memory part 2a when the temperature of the electrostatic chuck 1111 is stabilized at the set temperature without placing the dummy substrate on the substrate support part 11.

[0056] After the temperature of the dummy substrate has stabilized at the set temperature, parameters for plasma processing the dummy substrate are set in step ST13. These parameters may be the same as the parameters for plasma processing performed on the reference substrate, the first process substrate, and the second process substrate in steps ST2 to ST4, which will be described later. The plasma processing may include plasma etching processing for forming semiconductor elements on the reference substrate, the first process substrate, and the second process substrate.

[0057] The plasma processing parameters may include the type of process gas, the flow rate of the process gas, the frequency, power and duty ratio of the source RF signal, the frequency, power / voltage and duty ratio of the bias signal, the pressure in the plasma processing chamber 10, the voltage applied to the ring assembly 112, the height of the ring assembly 112, and the distribution of the magnetic field applied in the plasma processing chamber 10. Then, in step ST14, plasma is generated and plasma processing is performed on the dummy substrate.

[0058] Next, in step ST15, the power supplied to the plurality of heaters 200 is acquired. In steps ST14 and ST15, the control unit 2 may control the power supplied to each heater 200 so that the temperature of the dummy substrate in each zone 111c becomes the set temperature. Then, the control unit 2 acquires the power supplied to each of the plurality of heaters 200 while plasma is generated in the plasma processing chamber 10. The control unit 2 may store the power supplied to the plurality of heaters 200 acquired in step ST15 in the storage unit 2a in association with one or more plasma processing parameters. In this embodiment, the parameter may be a parameter that can change the distribution of electron density generated in the plasma processing chamber 10.

[0059] Next, in step ST16, it is determined whether the power supply to the heaters 200 has been acquired under all conditions for which the parameters have been changed. If it is determined that the power supply has not been acquired under all conditions (step ST16: No), the process returns to step ST13, where the control unit 2 changes one or more parameters to generate plasma (step ST14). The parameter may be a parameter that changes the distribution of electron density generated in the plasma processing chamber 10. For example, the parameter may be the magnetic flux density of the magnetic field applied to the plasma processing chamber 10. The parameter may also be the voltage applied to the ring assembly 112 or the height of the ring assembly 112. Then, in a state in which plasma is generated using the newly set parameters in step ST13, the power supplied to each of the heaters 200 is newly acquired (step ST15). The control unit 2 may store the power supply to the heaters 200 acquired in step ST15 in the storage unit 2a in association with one or more parameters.

[0060] Then, when it is determined that the power supplied to the plurality of heaters 200 has been obtained under all conditions in which the parameters have been changed (step ST16: Yes), the control unit 2 stops the plasma processing. Then, in step ST17, the control unit 2 generates a table based on the parameter values ​​and the power supplied to the plurality of heaters 200 stored in the storage unit 2a. The table may be a table that associates the amount of change in the parameter in the plasma processing performed in step ST14 with the amount of change in the distribution of ion flux caused by the amount of change. Note that the distribution of ion flux may be calculated based on the heat flux generated between the dummy substrate placed on the substrate support 11 and the plasma generated in the plasma processing chamber 10. For example, when the temperature of the dummy substrate placed on the substrate support 11 is constant, the ion flux Γ(m －２ s －１ ) is the heat flux Γ occurring between the dummy substrate and the plasma generated in the plasma processing chamber 10 ｈｅａｔ (W / m ２ ) can have the following relationship: ｉ ×Vdc∝Γ ｈｅａｔ Formula (1)

[0061] Here, Vdc (V) is the bias voltage (V) generated between the dummy substrate and the plasma. Also, the heat flux Γ generated between the dummy substrate placed on the substrate support 11 and the plasma generated in the plasma processing chamber 10 is ｈｅａｔ may be calculated based on the supplied power acquired in the process ST15. ｈｅａｔ may be calculated based on the following formula: ｈｅａｔ = (P ０ -P ｈｔｒ ) / A formula (2)

[0062] Here, P ０ is the power (W) supplied to the heater 200 of the zone 111c when no plasma is generated. ０is the power supplied to the heater 200 of the zone 111c, acquired in the process ST12. ｈｔｒ is the power (W) supplied to the heater 200 of the zone 111c in the state where the plasma is generated. ｈｔｒ is the power supplied to the heater 200 of the zone 111c, acquired in the process ST15. ｈｔｒ For example, ℓ may be the power (W) supplied to the heater 200 of the zone 111c when the power (W) becomes substantially constant after the plasma is generated. Also, A is the area (m ２ )

[0063] In the table generated in step ST17, the parameter stored in association with the change in ion flux may be the change in magnetic flux density of the magnetic field applied to the plasma, or the change in current and / or voltage supplied to the electromagnet that generates the magnetic field. Here, when the temperature of the dummy substrate is constant, the ion flux Γ generated between the dummy substrate and the plasma ｉ may be related to the electron density in the plasma according to the following equation: ｉ ∝n ｅ ×(Vdc) １／２ Formula (3)

[0064] where n ｅ is the electron density in the plasma (m －３ ) where Vdc is the bias voltage (V) generated between the dummy substrate and the plasma. The electron density in the plasma can have a relationship with the magnetic flux density of the magnetic field applied to the plasma based on the following formula: n ｅ ∝H Formula (4)

[0065] Here, H is the magnetic flux density (G). This changes the distribution of the magnetic flux density applied to the plasma, thereby changing the distribution of the ion flux generated between the plasma and the dummy substrate. In this way, in step ST17, the control unit 2 can, for example, generate a table that associates the amount of change in the distribution of the magnetic flux density of the magnetic field applied to the plasma with the amount of change in the distribution of the ion flux.

[0066] Furthermore, in the table generated in step ST17, the parameter stored in association with the amount of change in ion flux may be a parameter that can change the distribution of the bias voltage generated between the substrate W placed on the substrate support 11 and the plasma generated in the plasma processing chamber 10. Here, when the temperature of the dummy substrate is constant, the ion flux Γ generated between the dummy substrate and the plasma ｉ may have the relationship of the above formula (3) with respect to the bias voltage (V) generated between the dummy substrate and / or ring assembly 112 and the plasma. This allows the distribution of the bias voltage Vdc to be changed to change the distribution of the ion flux generated between the plasma and the dummy substrate. In this manner, in process ST17, the control unit 2 may, for example, generate a table that associates the amount of change in the bias voltage distribution with the amount of change in the ion flux distribution. Also, in process ST17, the control unit 2 may, for example, generate a table that associates the amount of change in the voltage applied to the ring assembly 112 with the amount of change in the ion flux distribution. Also, in process ST17, the control unit 2 may, for example, generate a table that associates the amount of change in the height of the ring assembly 112 with the amount of change in the ion flux distribution.

[0067] (Process ST2: Plasma Treatment of Reference Substrate) FIG. 8 is a flowchart showing an example of process ST2. In process ST2, a reference substrate is plasma-treated to acquire reference distribution data. The reference substrate may be a substrate on which semiconductor elements are formed. The plasma treatment may include a plasma etching process for forming semiconductor elements on the reference substrate. That is, the reference substrate may include a predetermined film and a mask film disposed on the predetermined film. The mask film may have a predetermined opening pattern. The reference substrate may be the same substrate as the first process substrate and / or the second process substrate described below. That is, the reference substrate may include a mask film having the same film and the same opening pattern as the first process substrate and / or the second process substrate. Note that in process ST2, a dummy substrate may be plasma-treated instead of the reference substrate to calculate the reference distribution data.

[0068] 8, process ST2 includes a step of placing a reference substrate (process ST21), a step of setting the temperature of the reference substrate (process ST22), a step of generating plasma (process ST23), a step of acquiring the supply power of each heater (process ST24), and a step of calculating reference distribution data (process ST25). In one example, process ST2 can be performed after installation or maintenance of the plasma processing apparatus 1. That is, process ST2 can be performed when the plasma processing apparatus 1 is in good condition.

[0069] First, in step ST21, a reference substrate is placed on the substrate support part 11. Next, in step ST22, the temperature of the reference substrate is set. In one example, the control part 2 controls the control part 81 arranged on the control board 80 so that the temperature of the reference substrate in each zone 111c becomes the set temperature. The control part 2 also acquires the power supplied to each heater 200 when the temperature of the reference substrate is stable at the set temperature and stores the power in the memory part 2a. Note that the state in which the temperature of the reference substrate is stable at the set temperature may be determined as the time when a predetermined time has elapsed since the reference substrate was placed on the substrate support part 11. Alternatively, the power supplied to each heater 200 may be acquired and stored in the memory part 2a when the temperature of the electrostatic chuck 1111 is stable at the set temperature without placing the reference substrate on the substrate support part 11.

[0070] After the temperature of the reference substrate is stabilized at the set temperature, in step ST23, plasma is generated in the plasma processing chamber 10 to plasma process the reference substrate. The parameters for plasma processing the reference substrate in step ST23 may be the same as the parameters set in step ST13.

[0071] Next, in process ST24, the power supplied to the plurality of heaters 200 is acquired. In processes ST23 and ST24, the control unit 2 controls the power supplied to each heater 200 so that the temperature of the reference substrate in each zone 111c becomes the set temperature. Then, in a state in which plasma is generated in process ST24, the control unit 2 acquires the power supplied to each of the plurality of heaters 200. The control unit 2 can store the power supplied to the plurality of heaters 200 acquired in process ST24 in the memory unit 2a in association with one or more parameters.

[0072] Next, in step ST25, reference distribution data is calculated. The reference distribution data may be distribution data of ion flux occurring between the plasma generated in the plasma processing chamber 10 and the reference substrate. The ion flux distribution data may be calculated based on equations (1) and (2) described in step ST17.

[0073] FIG. 9 is a diagram showing an example of reference distribution data. The reference distribution data can be acquired when the plasma processing apparatus 1 is in a normal state, such as after installation or maintenance of the plasma processing apparatus 1. Therefore, the reference distribution data may be used as reference distribution data for the ion flux occurring between the plasma and the substrate. Note that multiple reference distribution data may be acquired from multiple reference substrates, and a single distribution data such as that shown in FIG. 9 may be calculated based on the multiple reference distribution data. Note that FIG. 9 shows distribution data calculated for a substrate having a diameter of 300 mm, as an example.

[0074] (Process ST3: Plasma Treatment of First Process Substrate) FIG. 10 is a flowchart showing an example of process ST3. In process ST3, the first process substrate is plasma-treated. The first process substrate may be a substrate on which semiconductor elements are formed. The plasma treatment may include a plasma etching process for forming semiconductor elements on the first process substrate. The first process substrate may be a substrate having the same structure as the reference substrate. That is, the first process substrate may include the same film and a mask film having the same opening pattern as the reference substrate. The parameters for plasma-treating the first process substrate may be the same as the parameters for plasma-treating the reference substrate. The first process substrate is an example of a first substrate. In process ST3, a dummy substrate may be plasma-treated instead of the first process substrate to calculate the first distribution data.

[0075] 10 , process ST3 includes a step of placing a first process substrate (process ST31), a step of setting the temperature of the first process substrate (process ST32), a step of generating plasma (process ST33), a step of acquiring the supply power of each heater (process ST34), a step of calculating first distribution data (process ST35), and a step of calculating a correction value (process ST36). In one example, process ST3 may be performed after a predetermined period of time has elapsed since process ST2 was performed, in order to correct for changes over time in the plasma processing apparatus 1.

[0076] First, in step ST31, a first process substrate is placed on the substrate support part 11. Next, in step ST32, the temperature of the first process substrate is set. In one example, the control unit 2 controls the control unit 81 disposed on the control board 80 so that the temperature of the first process substrate in each zone 111c becomes the set temperature. The control unit 2 also acquires the power supplied to each heater 200 when the temperature of the first process substrate is stable at the set temperature and stores the power in the memory unit 2a. Note that the state in which the temperature of the first process substrate is stable at the set temperature may be determined as a predetermined time after the first process substrate is placed on the substrate support part 11. Alternatively, the power supplied to each heater 200 may be acquired and stored in the memory unit 2a when the temperature of the electrostatic chuck 1111 is stable at the set temperature without placing the first process substrate on the substrate support part 11.

[0077] After the temperature of the first process substrate is stabilized at the set temperature, in step ST33, plasma is generated in the plasma processing chamber 10 to plasma process the first process substrate. The parameters for plasma processing the first process substrate in step ST33 may be the same as the parameters set in steps ST13 and ST23.

[0078] Next, in process ST34, the power supplied to the plurality of heaters 200 is acquired. In processes ST33 and ST34, the control unit 2 controls the power supplied to each heater 200 so that the temperature of the first process substrate in each zone 111c becomes the set temperature. Then, in a state in which plasma is generated in process ST34, the control unit 2 acquires the power supplied to each of the plurality of heaters 200. The control unit 2 can store the power supplied to the plurality of heaters 200 acquired in process ST34 in the memory unit 2a in association with one or more parameters.

[0079] Next, in step ST35, first distribution data is calculated. The first distribution data may be distribution data of ion fluxes occurring between the plasma generated in the plasma processing chamber 10 and the first process substrate. The distribution data of ion fluxes may be calculated based on the formulas (1) and (2) described in step ST17.

[0080] FIG. 11 is a diagram showing an example of first distribution data. The first distribution data shown in FIG. 11 is, for example, acquired after a predetermined period of time has elapsed, such as after installation or maintenance of the plasma processing apparatus 1. Therefore, while the first distribution data is acquired using the same plasma processing parameters as the reference distribution data, it may also reflect changes over time in consumable parts included in the plasma processing apparatus 1. In the example shown in FIG. 11 , the ion flux is higher in the central and lower regions than in other regions. Therefore, in step ST36, a correction value is calculated based on the reference distribution data and the first distribution data to correct the ion flux distribution for a second process substrate, which is subjected to plasma processing after the first process substrate. The correction value may be the difference between the reference distribution data and the first distribution data. Note that FIG. 11 shows distribution data calculated for a substrate having a diameter of 300 mm, for example.

[0081] (Process ST4: Plasma Treatment of Second Process Substrate) FIG. 12 is a flowchart showing an example of process ST4. In process ST4, a second process substrate is plasma-treated. In process ST4, the second process substrate may be plasma-treated using the correction value acquired for the first process substrate in process ST36. In one example, the first process substrate may be the first substrate processed in a particular lot. Furthermore, the second process substrate may be the substrate processed after the first process substrate in the particular lot.

[0082] The second process substrate may be a substrate on which semiconductor elements are formed. The plasma processing may include a plasma etching process for forming semiconductor elements on the second process substrate. The second process substrate may be a substrate having the same structure as the reference substrate and / or the first process substrate. That is, the second process substrate may include a mask film having the same film and opening pattern as the reference substrate and / or the first process substrate. The parameters for plasma processing the second process substrate may be the same as the parameters for plasma processing the reference substrate and / or the first process substrate. The second process substrate is an example of a second substrate. In step ST4, a dummy substrate may be plasma processed instead of the second process substrate to calculate the second distribution data.

[0083] As shown in FIG. 12, process ST4 includes a step of positioning a second process substrate (process ST41), a step of setting the temperature of the second process substrate (process ST42), a step of generating plasma based on a correction value (process ST43), a step of acquiring the supply power of each heater (process ST44), a step of calculating second distribution data (process ST45), and a step of calculating a correction value (process ST46).

[0084] First, in step ST41, a second process substrate is placed on the substrate support part 11. Next, in step ST42, the temperature of the second process substrate is set. In one example, the control part 2 controls the control part 81 disposed on the control board 80 so that the temperature of the second process substrate in each zone 111c becomes the set temperature. The control part 2 also acquires the power supplied to each heater 200 when the temperature of the second process substrate is stable at the set temperature and stores the power in the memory part 2a. Note that the state in which the temperature of the second process substrate is stable at the set temperature may be determined as the time when a predetermined time has elapsed since the second process substrate was placed on the substrate support part 11. Alternatively, the power supplied to each heater 200 may be acquired and stored in the memory part 2a when the temperature of the electrostatic chuck 1111 is stable at the set temperature without placing the second process substrate on the substrate support part 11.

[0085] After the temperature of the second process substrate stabilizes at the set temperature, in step ST43, plasma is generated in the plasma processing chamber 10 to plasma process the second process substrate. Some of the parameters for plasma processing the second process substrate in step ST43 can be set based on the correction value calculated based on the reference distribution data in step ST35. That is, in step ST43, plasma can be generated in the plasma processing chamber 10 based on the correction value calculated based on the reference distribution data in step ST35. As an example, if the correction value is a difference value between the reference distribution data and the first distribution data (a difference value in the ion flux distribution), the control unit 2 references the amount of change in the ion flux distribution corresponding to the correction value in the table stored in the memory unit 2a in step ST1. The control unit 2 then sets parameters for correcting the ion flux distribution based on the amount of change in the parameter included in the table, which corresponds to the amount of change in the ion flux distribution.

[0086] In one example, the parameter may be the flux density of a magnetic field applied to the plasma, or the current and / or voltage supplied to an electromagnet that generates the magnetic field, or the parameter may be the voltage applied to the ring assembly.

[0087] Note that generating plasma in the plasma processing chamber 10 based on the reference distribution data may include generating plasma after adjusting the hardware configuration based on the correction value calculated in step ST36 and / or step ST46. As an example, adjusting the hardware configuration may be adjusting the height of the ring assembly 112. The height of the ring assembly 112 may be the height of the surface of the ring assembly 112 relative to the height of the substrate support surface of the substrate support 11. Furthermore, the adjustment of the hardware configuration may be performed before step ST43. That is, the adjustment of the hardware configuration may be performed before step ST43, and then plasma may be generated in step ST43. Such plasma generation may also be included in generating plasma in the plasma processing chamber 10 based on the reference distribution data. Here, with reference to FIGS. 13 and 14 , an example of correcting the ion flux distribution by adjusting parameters related to the ring assembly 112 will be described.

[0088] 13A is a diagram schematically illustrating the ion flux generated between the substrate W and the ring assembly 112 and the plasma when the plasma processing apparatus 1 is in a good state (e.g., when the reference distribution data is obtained in step ST2). Also, FIG. 13B is a diagram schematically illustrating the ion flux Γ generated between the substrate W and the ring assembly 112 and the plasma when the plasma processing apparatus 1 is in a good state (e.g., when the reference distribution data is obtained in step ST2). ｉ 14A is a diagram showing an example of a distribution of ion flux Γ generated between the substrate W and the ring assembly 112 and the plasma when the plasma processing apparatus 1 has been used for a certain period of time (for example, when the first distribution data was acquired in step ST3). Also, FIG. 14B is a diagram showing an example of a distribution of ion flux Γ generated between the substrate W and the ring assembly 112 and the plasma when the plasma processing apparatus 1 has been used for a certain period of time (for example, when the first distribution data was acquired in step ST3). ｉ 13A and 14A, Pb indicates the bottom of the plasma (the top of the plasma sheath), and d indicates the thickness of the plasma sheath.

[0089] 13A, when the plasma processing apparatus 1 is in a good condition, the thickness d of the plasma sheath can be approximately constant from the substrate W to the ring assembly 112 (i.e., in the lateral direction in FIG. 13A). And, as shown in FIG. 13B, the distribution of the ion flux Γi can also be approximately constant from the substrate W to the ring assembly 112. The angle of incidence of the ion flux Γi with respect to the substrate W and the ring assembly 112 can also be approximately perpendicular to the substrate W and the ring assembly 112.

[0090] On the other hand, after the plasma processing apparatus 1 has been used for a certain period of time in a good condition, the thickness d of the plasma sheath on the ring assembly 112 may change to a thickness different from the thickness d of the plasma sheath on the substrate W due to wear of the ring assembly 112, as shown in FIG. 14A . This may also change the angle of incidence of the ion flux Γi with respect to the substrate W and / or the ring assembly 112 near the boundary between the substrate W and the ring assembly 112, thereby changing the shape of the plasma sheath. When a difference value between the reference distribution data and the first distribution data (a difference value in the ion flux distribution) appears along the outer periphery of the substrate W, the controller 2 may adjust parameters related to the ring assembly 112 to generate plasma in step ST43. For example, the plasma processing apparatus 1 may be configured to apply a voltage to the ring assembly 112, and the controller 2 may adjust the voltage applied to the ring assembly 112 to correct the distribution of the ion flux Γi. The plasma processing apparatus 1 may further include an actuator configured to adjust the height of the ring assembly 112, and the control unit 2 may control the actuator to adjust the height of the ring assembly 112 and correct the distribution of the ion flux Γ. Note that the adjustment of the parameters related to the ring assembly 112 may be performed before step ST43.

[0091] Next, in process ST44, the power supplied to the plurality of heaters 200 is acquired. In processes ST43 and ST44, the control unit 2 controls the power supplied to each heater 200 so that the temperature of the second process substrate in each zone 111c becomes the set temperature. Then, the control unit 2 acquires the power supplied to each of the plurality of heaters 200 in a state in which plasma is generated. The control unit 2 can store the power supplied to the plurality of heaters 200 acquired in process ST44 in the memory unit 2a in association with one or more parameters.

[0092] Next, in step ST45, second distribution data is calculated. The first distribution data may be distribution data of ion fluxes occurring between the plasma generated in the plasma processing chamber 10 and the second process substrate. The distribution data of ion fluxes may be calculated based on equations (1) and (2) described in step ST17.

[0093] Next, in step ST46, a correction value is calculated based on the reference distribution data and the second distribution data. The correction value may be a difference value between the reference distribution data and the second distribution data. The correction value may be used as a correction value for the ion flux distribution in a plasma processing performed after the second process substrate in a lot including the first process substrate and the second process substrate.

[0094] Although the correction values ​​are calculated based on the reference distribution data in steps ST36 and ST46, the method for calculating the correction values ​​is not limited to this. As an example, data acquired in the plasma processing in steps ST3 and ST4 may be accumulated, and the parameters for the plasma processing may be corrected based on the accumulated data to correct the ion flux distribution. The accumulated data may include the plasma processing parameters, the power supplied to the heater, the heater temperature, the heat flux distribution, the ion flux distribution, the type and structure of the substrate, etc.

[0095] Furthermore, this processing method may include, in addition to or instead of the steps described in steps ST1 to ST4, an in-plane correction step of correcting the in-plane distribution of ion flux. Fig. 15 is a flowchart showing an example of the in-plane correction step. The in-plane correction step includes a step (ST51) of calculating the ion flux in each zone 111c, a step (ST52) of calculating the difference in ion flux between adjacent zones 111c, a step (ST53) of calculating the angle of incidence of the ion flux in each zone 111c, and a step of correcting the distribution of the ion flux based on the calculated angle of incidence.

[0096] First, in step ST51, the ion flux in each zone 111c is calculated. The ion flux may be calculated by the method described in steps ST1 to ST4. Next, in step ST52, the difference in ion flux between adjacent zones is calculated, and then in step ST53, the angle of incidence of the ion flux in each zone 111c is calculated. In step ST53, the angle of incidence of the ion flux may be calculated based on the difference in ion flux between the multiple zones 111c calculated in step ST52 and the distance between the multiple zones 111c. The distance between the multiple zones 111c may be the distance between the resistors 201 arranged in each of the multiple zones 111c. Next, in step ST54, the distribution of the ion flux between the multiple zones 111c is corrected based on the calculated distribution of the angle of incidence of the ion flux. In step ST54, the distribution of ion flux among the plurality of zones 111c may be corrected based on the distribution of the incident angles of the ion flux calculated in step ST53, similar to the methods described in steps ST1 to ST4. Furthermore, in step ST54, the ion flux in each zone 111c may be corrected so that the distribution of the ion flux becomes more uniform within the plane of the substrate W and / or the ring assembly 112.

[0097] <Another embodiment of the plasma processing apparatus 1> FIG. 16 is a diagram illustrating another exemplary configuration of the plasma processing apparatus. In one embodiment, the plasma processing apparatus 1 may include an electromagnet assembly 3 including one or more electromagnets 45. The electromagnet assembly 3 is configured to generate a magnetic field within the chamber 10. In one embodiment, the plasma processing apparatus 1 includes an electromagnet assembly 3 including a plurality of electromagnets 45. In the embodiment shown in FIG. 14, the plurality of electromagnets 45 includes electromagnets 46 to 49. The plurality of electromagnets 45 are provided above or above the chamber 10. In other words, the electromagnet assembly 3 is disposed above or above the chamber 10. In the example shown in FIG. 14, the plurality of electromagnets 45 are provided above the showerhead 13.

[0098] Each of the one or more electromagnets 45 includes a coil. In the example shown in Fig. 14, the electromagnets 46 to 49 include coils 61 to 64. The coils 61 to 64 are wound around a central axis Z. The central axis Z may be an axis passing through the center of the substrate W or the substrate support 11. That is, in the electromagnet assembly 3, the coils 61 to 64 may be toroidal coils. The coils 61 to 64 are provided coaxially around the central axis Z at the same height position.

[0099] The electromagnet assembly 3 further includes a bobbin 50 (or yoke). The coils 61 to 64 are wound around the bobbin 50 (or yoke). The bobbin 50 is formed, for example, from a magnetic material. The bobbin 50 has a columnar portion 51, multiple cylindrical portions 52 to 55, and a base portion 56. The base portion 56 has a substantially disk shape, and its central axis coincides with the central axis Z. The columnar portion 51 and the multiple cylindrical portions 52 to 55 extend downward from the lower surface of the base portion 56. The columnar portion 51 has a substantially cylindrical shape, and its central axis coincides with the central axis Z. The radius of the columnar portion 51 is, for example, 30 mm. The cylindrical portions 52 to 55 extend radially outside the columnar portion 51 with respect to the central axis Z.

[0100] Coil 61 is wound along the outer peripheral surface of columnar portion 51 and is housed in the groove between columnar portion 51 and cylindrical portion 52. Coil 62 is wound along the outer peripheral surface of cylindrical portion 52 and is housed in the groove between cylindrical portions 52 and 53. Coil 63 is wound along the outer peripheral surface of cylindrical portion 53 and is housed in the groove between cylindrical portions 53 and 54. Coil 64 is wound along the outer peripheral surface of cylindrical portion 54 and is housed in the groove between cylindrical portions 54 and 55.

[0101] A current source 65 is connected to each coil included in one or more electromagnets 45. The supply and stop of current supply from the current source 65 to each coil included in one or more electromagnets 45, the direction of the current, and the current value are controlled by the control unit 2. When the plasma processing apparatus 1 includes a plurality of electromagnets 45, a single current source may be connected to each coil of the plurality of electromagnets 45, or different current sources may be connected to each coil individually.

[0102] The one or more electromagnets 45 form a magnetic field symmetrical with respect to the central axis Z within the chamber 10. By controlling the current supplied to each of the one or more electromagnets 45, it is possible to adjust the strength distribution (or magnetic flux density) of the magnetic field in the radial direction with respect to the central axis Z. This allows the plasma processing apparatus 1 to adjust the radial distribution of the density of the plasma generated within the chamber 10. Other configurations, operations, and / or functions of the plasma processing apparatus 1 shown in FIG. 16 may be similar to those of the plasma processing apparatus 1 described in the example shown in FIG. 2.

[0103] According to the exemplary embodiments of the present disclosure, it is possible to reduce variations in the distribution of ion flux, thereby generating highly uniform plasma in plasma processing, and ultimately reducing variations in the in-plane distribution of etching rate in plasma etching, for example.

[0104] According to the exemplary embodiment of the present disclosure, even if a change occurs in the distribution of ion flux occurring between the plasma generated during plasma processing and the substrate, the change over time can be easily corrected by correcting the parameters of the plasma processing. The change in the distribution of ion flux may be, for example, a change caused by wear of components of the plasma processing apparatus 1 over time. The components may include a ring assembly such as a focus ring.

[0105] According to an exemplary embodiment of the present disclosure, for example, the distribution of ion flux may be corrected for each substrate, thereby suppressing variations in plasma processing between substrates.

[0106] Embodiments of the present disclosure further include the following aspects.

[0107] (Supplementary Note 1) A plasma processing method for performing plasma processing on a substrate in a plasma processing apparatus having a chamber and a substrate support part disposed in the chamber, the method comprising: (a) a step of storing in advance first distribution data which is data relating to a distribution of ion flux generated between the plasma generated in the chamber and a first substrate disposed on the substrate support part; (b-a) a step of disposing a second substrate on the substrate support part; and (b-b) a plasma processing step of generating plasma in the chamber based on the first distribution data and performing plasma processing on the second substrate.

[0108] (Supplementary Note 2) The plasma processing method according to Supplementary Note 1, wherein the storing step (a) includes: (a-a) placing the first substrate on the substrate support; (a-b) generating plasma in the chamber and performing the plasma processing on the first substrate; (a-c) supplying power to each of a plurality of heaters arranged in the substrate support; (a-d) acquiring the power supplied to each of the plurality of heaters in a state in which plasma is generated in the chamber; and (a-e) calculating the first distribution data based on the power acquired for each of the plurality of heaters in the first power acquiring step.

[0109] (Supplementary Note 3) The plasma processing method according to Supplementary Note 1 or 2, further comprising: (c-a) placing a reference substrate on the substrate support; (c-b) generating plasma in the chamber and performing plasma processing on the reference substrate; (c-c) supplying power to each of a plurality of heaters arranged in the substrate support; (c-d) acquiring the power supplied to each of the plurality of heaters in a state where plasma is generated in the chamber; and (c-e) calculating reference distribution data which is data indicating a distribution of ion flux generated between the reference substrate and the plasma, the reference distribution data being calculated based on the power acquired for each of the plurality of heaters in the reference power acquiring step; and wherein in the plasma processing step (b-b), the plasma is generated based on the reference distribution data and the first distribution data.

[0110] (Supplementary Note 4) The plasma processing method according to any one of Supplementary Notes 1 to 3, wherein the plasma processing step (b-b) includes generating the plasma in the chamber based on a difference between the reference distribution data and the first distribution data.

[0111] (Supplementary Note 5) The plasma processing method according to any one of Supplementary Notes 1 to 4, wherein the plasma processing apparatus further comprises a memory unit that stores a table correlating (1) a change in distribution of electron density of the plasma generated in the chamber with (2) a change in distribution of ion flux occurring between the substrate placed on the substrate support unit and the plasma generated in the chamber, and the plasma processing step (b-b) includes a step of controlling the distribution of electron density by referring to the table stored in the memory unit based on a difference between the reference distribution data and the first distribution data.

[0112] (Supplementary Note 6) The plasma processing method according to Supplementary Note 5, wherein the plasma processing apparatus further comprises a plurality of electromagnets arranged opposite the substrate support, and the step of controlling the distribution of electron density includes a step of controlling at least one of a current and a voltage supplied to the plurality of electromagnets to control the distribution of electron density.

[0113] (Supplementary Note 7) The plasma processing method of Supplementary Note 2, wherein the substrate support portion has a substrate support surface that supports a substrate, the substrate support surface includes a plurality of support regions, and each of the plurality of heaters is disposed on the substrate support portion in each of the plurality of support regions.

[0114] (Supplementary Note 8) The plasma processing method according to Supplementary Note 3, wherein the reference substrate, the first substrate, and the second substrate each include a mask film having the same opening pattern.

[0115] (Supplementary Note 9) The plasma processing method according to Supplementary Note 5 or 6, further comprising a step of generating the table, the step of generating the table comprising: a step of placing a dummy substrate on the substrate support part; a step of controlling a supply power to each of the plurality of heaters so that the temperature of each of the plurality of heaters becomes a predetermined temperature with the dummy substrate placed on the substrate support part; a step of placing the dummy substrate on the substrate support part; a step of generating plasma in the chamber and performing the plasma processing on the dummy substrate; and a step of changing a distribution of electron density of the plasma to obtain power to be supplied to the plurality of heaters with the plasma processing being performed on the substrate including the mask film; and a step of storing in the table (1) an amount of change in the distribution of electron density of the plasma generated in the chamber and (2) an amount of change in the distribution of ion flux occurring between the substrate placed on the substrate support part and the plasma generated in the chamber, in association with each other.

[0116] (Supplementary Note 10) The plasma processing method according to any one of Supplementary Notes 1 to 4, wherein the plasma processing apparatus further comprises a memory unit that stores a table correlating (1) a change in distribution of a bias voltage occurring between the substrate placed on the substrate support part and the plasma generated in the chamber with (2) a change in distribution of an ion flux occurring between the substrate placed on the substrate support part and the plasma generated in the chamber, and the plasma processing step (b-b) includes a step of controlling the distribution of the bias voltage by referring to the table stored in the memory unit based on a difference between the reference distribution data and the first distribution data.

[0117] (Supplementary Note 11) The plasma processing method according to Supplementary Note 10, wherein the plasma processing apparatus further comprises a ring assembly disposed around the substrate support, and the step of controlling the distribution of the bias voltage includes controlling a voltage applied to the ring assembly to control the distribution of the bias voltage.

[0118] (Appendix 12) The plasma processing method according to Appendix 10, wherein the plasma processing apparatus further comprises: a ring assembly arranged around the substrate support; and an actuator configured to adjust the height of the ring assembly relative to the height of the substrate support; and the step of controlling the distribution of the bias voltage includes adjusting the height of the ring assembly to control the distribution of the bias voltage.

[0119] (Supplementary Note 13) A plasma processing apparatus having a chamber, a substrate support part disposed in the chamber, and a control part, wherein the control part performs the following processes: (a) pre-storing reference distribution data which is data regarding the distribution of ion flux generated between plasma generated in the chamber and a first substrate disposed on the substrate support part; (b-a) disposing a second substrate on the substrate support part; and (b-b) generating plasma in the chamber based on the reference distribution data and performing plasma processing on the second substrate.

[0120] The above embodiments are described for the purpose of explanation and are not intended to limit the scope of the present disclosure. Various modifications can be made to the above embodiments without departing from the scope and spirit of the present disclosure. For example, some components in one embodiment can be added to other embodiments. Also, some components in one embodiment can be replaced with corresponding components in other embodiments.

[0121] 1... plasma processing apparatus, 2... control unit, 10... plasma processing chamber, 10a... side wall, 10b... bottom wall, 10s... plasma processing space, 12... plasma generation unit, 70... power supply unit, 73... wiring, 75... wiring, 81... control unit, 82... supply unit, 83... measurement unit, 111c... zone, 112... ring assembly, 200... heater, 201... resistor, 1110... base, 1110a... flow path, 1111... electrostatic chuck, 1111a... ceramic member, 1111b... electrostatic electrode

Claims

1. A plasma processing apparatus having a chamber and a substrate support portion disposed within the chamber, wherein plasma is generated in the chamber and plasma processing is performed on a substrate, (a) A step of pre-storing first distribution data which is data relating to the distribution of ion flux generated between the plasma generated in the chamber and the first substrate placed on the substrate support; (b-a) A step of placing the second substrate on the substrate support portion, (b-b) A plasma processing step of generating plasma in the chamber based on the first distribution data and performing plasma processing on the second substrate, A plasma treatment method, including the following.

2. The storage step in (a) above is: (a-a) The step of placing the first substrate on the substrate support portion, (a-b) A step of generating plasma in the chamber and performing the plasma treatment on the first substrate, (a-c) A step of supplying power to each of the multiple heaters arranged within the substrate support portion, (a-d) A step of acquiring the power supplied to each of the plurality of heaters while plasma is generated in the chamber, (a-e) A step of calculating the first distribution data based on the power acquired for each of the plurality of heaters in the first power acquisition step, The plasma treatment method according to claim 1, including the following:

3. (c-a) A step of placing the reference substrate on the substrate support portion, (c-b) A step of generating plasma in the chamber and performing plasma treatment on the reference substrate, (c-c) A step of supplying power to each of the multiple heaters arranged within the substrate support portion, (c-d) A step of acquiring the power supplied to each of the plurality of heaters when plasma is generated in the chamber, (c-e) A step of calculating reference distribution data which is data showing the distribution of ion flux generated between the reference substrate and the plasma, wherein the reference distribution data is calculated based on the power obtained for each of the plurality of heaters in the reference power acquisition step, It further includes, The plasma processing method according to claim 1, wherein in the plasma processing step (b-b) above, the plasma is generated based on the reference distribution data and the first distribution data.

4. The plasma processing method according to claim 3, wherein the plasma processing step (b-b) includes generating the plasma in the chamber based on the difference between the reference distribution data and the first distribution data.

5. The plasma processing apparatus further includes a storage unit that stores a table relating (1) the amount of change in the electron density distribution of the plasma generated in the chamber and (2) the amount of change in the ion flux distribution occurring between the substrate placed in the substrate support and the plasma generated in the chamber, The plasma processing method according to claim 4, wherein the plasma processing step (b-b) includes a step of controlling the electron density distribution by referring to a table stored in the storage unit based on the difference between the reference distribution data and the first distribution data.

6. The plasma processing apparatus further comprises a plurality of electromagnets arranged opposite the substrate support portion, The plasma processing method according to claim 5, wherein the step of controlling the electron density distribution includes a step of controlling at least one of the current and voltage supplied to the plurality of electromagnets to control the electron density distribution.

7. The aforementioned substrate support portion has a substrate support surface that supports the substrate, The substrate support surface includes a plurality of support regions. The plasma processing method according to claim 2, wherein each of the plurality of heaters is arranged in the substrate support portion in each of the plurality of support regions.

8. The plasma processing method according to claim 3, wherein the reference substrate, the first substrate, and the second substrate each include a mask film having the same aperture pattern.

9. The process further includes the step of generating the table, and the step of generating the table is: A step of placing a dummy circuit board on the circuit board support portion, With the dummy substrate placed on the substrate support, the process involves controlling the power supplied to each of the multiple heaters so that the temperature of each of the multiple heaters reaches a predetermined temperature. The steps include: placing the dummy substrate in the substrate support portion; A step of generating plasma in the chamber and performing the plasma treatment on the dummy substrate, A step of obtaining power supplied to the plurality of heaters by changing the electron density distribution of the plasma while the plasma treatment is being performed on the substrate including the mask film, (1) A step of storing in the table the amount of change in the distribution of electron density of the plasma generated in the chamber and (2) a amount of change in the distribution of ion flux occurring between the substrate placed in the substrate support and the plasma generated in the chamber, in correspondence with each other. The plasma treatment method according to claim 5, including the method described in claim 5.

10. The plasma processing apparatus further includes a storage unit that stores a table relating (1) the amount of change in the distribution of bias voltage occurring between the substrate placed in the substrate support and the plasma generated in the chamber and (2) the amount of change in the distribution of ion flux occurring between the substrate placed in the substrate support and the plasma generated in the chamber, The plasma processing method according to claim 4, wherein the plasma processing step (b-b) includes a step of controlling the distribution of the bias voltage by referring to a table stored in the storage unit based on the difference between the reference distribution data and the first distribution data.

11. The plasma processing apparatus further comprises a ring assembly disposed around the substrate support portion, The plasma processing method according to claim 10, wherein the step of controlling the distribution of the bias voltage includes controlling the voltage applied to the ring assembly to control the distribution of the bias voltage.

12. The aforementioned plasma processing apparatus is A ring assembly arranged around the substrate support portion, An actuator configured to adjust the height of the ring assembly relative to the height of the substrate support portion, Furthermore, The plasma processing method according to claim 10, wherein the step of controlling the distribution of the bias voltage includes adjusting the height of the ring assembly to control the distribution of the bias voltage.

13. A plasma processing apparatus having a chamber, a substrate support portion disposed within the chamber, and a control unit, wherein the control unit is (a) Control for pre-storing first distribution data, which is data relating to the distribution of ion flux generated between the plasma generated in the chamber and the first substrate placed in the substrate support; (b-a) Control for positioning the second substrate on the substrate support portion, (b-b) Control to generate plasma in the chamber based on the first distribution data and perform plasma treatment on the second substrate, A plasma processing device that performs this operation.

14. The control stored in (a) is (a-a) Control for positioning the first substrate on the substrate support portion, (a-b) Control to generate plasma in the chamber and perform the plasma treatment on the first substrate, (a-c) Control for supplying power to each of the multiple heaters arranged within the substrate support portion, (a-d) Control to acquire the power supplied to each of the plurality of heaters when plasma is generated in the chamber, (a-e) A control that calculates the first distribution data based on the power acquired for each of the plurality of heaters in the first power acquisition control, The plasma processing apparatus according to claim 13, including the following:

15. (c-a) Control for positioning the reference substrate on the substrate support portion, (c-b) Control to generate plasma in the chamber and perform plasma processing on the reference substrate, (c-c) Control for supplying power to each of the multiple heaters arranged within the substrate support portion, (c-d) Control to acquire the power supplied to each of the plurality of heaters when plasma is generated in the chamber, (c-e) A control for calculating reference distribution data, which is data showing the distribution of ion flux generated between the reference substrate and the plasma, wherein the reference distribution data is calculated based on the power acquired for each of the plurality of heaters in the reference power acquisition control, It further includes, The plasma processing apparatus according to claim 13, wherein in the plasma processing control of (b-b) above, the plasma is generated based on the reference distribution data and the first distribution data.

16. The plasma processing apparatus according to claim 15, wherein the plasma processing control of (b-b) includes generating the plasma in the chamber based on the difference between the reference distribution data and the first distribution data.

17. The present invention further comprises a storage unit that stores a table relating (1) the amount of change in the electron density distribution of the plasma generated in the chamber and (2) the amount of change in the ion flux distribution occurring between the substrate placed on the substrate support and the plasma generated in the chamber, The plasma processing control according to claim 16, wherein the plasma processing control (b-b) includes control of the electron density distribution by referring to a table stored in the storage unit based on the difference between the reference distribution data and the first distribution data.

18. The further comprising a plurality of electromagnets arranged opposite to the substrate support portion, The plasma apparatus according to claim 17, wherein the control for controlling the distribution of electron density includes controlling at least one of the current and voltage supplied to the plurality of electromagnets to control the distribution of electron density.

19. The substrate support portion has a substrate support surface that supports the substrate, The substrate support surface includes a plurality of support regions. The plasma processing apparatus according to claim 14, wherein each of the plurality of heaters is arranged in the substrate support portion in each of the plurality of support regions.

20. The plasma processing apparatus according to claim 15, wherein the reference substrate, the first substrate, and the second substrate each include a mask film having the same aperture pattern.

21. Further includes control for generating the table, wherein the control for generating the table is: Control for positioning the dummy circuit board in the circuit board support section, With the dummy substrate placed on the substrate support, a control system controls the power supplied to each of the multiple heaters so that the temperature of each of the multiple heaters reaches a predetermined temperature. Control for positioning the dummy substrate in the substrate support section, Control for generating plasma in the chamber and performing the plasma processing on the dummy substrate, While the plasma treatment is being performed on the substrate including the mask film, control is performed to change the electron density distribution of the plasma and to obtain the power supplied to the plurality of heaters. (1) a control that stores in the table the amount of change in the electron density distribution of the plasma generated in the chamber and (2) a change in the ion flux distribution occurring between the substrate placed in the substrate support and the plasma generated in the chamber, in correspondence with each other. The plasma processing apparatus according to claim 17, including the following:

22. The present invention further comprises a storage unit that stores a table relating (1) the amount of change in the distribution of bias voltage occurring between the substrate placed on the substrate support and the plasma generated in the chamber and (2) the amount of change in the distribution of ion flux occurring between the substrate placed on the substrate support and the plasma generated in the chamber, The plasma processing control according to claim 16, wherein the plasma processing control (b-b) includes control of the bias voltage distribution by referring to a table stored in the storage unit based on the difference between the reference distribution data and the first distribution data.

23. Further comprising a ring assembly disposed around the substrate support portion, The plasma apparatus according to claim 22, wherein the control for controlling the distribution of the bias voltage includes controlling the voltage applied to the ring assembly to control the distribution of the bias voltage.

24. A ring assembly disposed around the substrate support portion, An actuator configured to adjust the height of the ring assembly relative to the height of the substrate support portion, Furthermore, The plasma apparatus according to claim 22, wherein the control for controlling the distribution of the bias voltage includes adjusting the height of the ring assembly to control the distribution of the bias voltage.