Electrochemical cell device, module, and module accommodating device

Abstract

This electrochemical cell device comprises a plurality of element parts and conductive members. The plurality of element parts are arranged side by side in a first direction. The conductive members are respectively positioned between the element parts adjacent to each other in the first direction. A first member is positioned in a first region positioned at a central section in the first direction. A second member is positioned in a second region positioned at an end section in the first direction. The first member has a first portion and a second portion which has a different infrared light reflectance from the first portion. The second member has a lower infrared light reflectance than the first portion.

Description

Electrochemical cell device, module, and module housing device

[0001] The present disclosure relates to electrochemical cell devices, modules and module housing devices.

[0002] In recent years, various fuel cell stack devices having multiple fuel cell units have been proposed as next-generation energy sources. A fuel cell unit is a type of electrochemical cell that can generate electric power using a fuel gas such as a hydrogen-containing gas and an oxygen-containing gas such as air.

[0003] JP 2021-180164 A JP 2015-220022 A

[0004] An electrochemical cell device according to one aspect of the embodiment includes a plurality of element units and a conductive member. The plurality of element units are aligned in a first direction. The conductive members are respectively positioned between the element units adjacent to each other in the first direction. A first member is positioned in a first region positioned at a center in the first direction. A second member is positioned in a second region positioned at an end in the first direction. The first member has a first portion and a second portion having a reflectance of infrared light different from that of the first portion. The second member has a lower reflectance of infrared light than the first portion.

[0005] An electrochemical cell device according to one aspect of the embodiment includes a plurality of element units and a conductive member. The plurality of element units are aligned in a first direction. The conductive members are respectively positioned between the element units adjacent to each other in the first direction. A first member and a second member having a different infrared light reflectance than the first member are positioned in a first region positioned at a center in the first direction. A third member is positioned in a second region positioned at an end in the first direction. The third member has a lower infrared light reflectance than the first member.

[0006] The module of the present disclosure includes the electrochemical cell device described above and a container that houses the electrochemical cell device.

[0007] The module housing device of the present disclosure includes the module described above, an auxiliary device for operating the module, and an exterior case for housing the module and the auxiliary device.

[0008] FIG. 1A is a cross-sectional view showing an example of an electrochemical cell according to the first embodiment. FIG. 1B is a side view of an example of an electrochemical cell according to the first embodiment, viewed from the air electrode side. FIG. 1C is a side view of an example of an electrochemical cell according to the first embodiment, viewed from the interconnector side. FIG. 2A is a perspective view showing an example of an electrochemical cell device according to the first embodiment. FIG. 2B is a cross-sectional view taken along line X-X shown in FIG. 2A. FIG. 2C is a top view showing an example of an electrochemical cell device according to the first embodiment. FIG. 3 is a cross-sectional view showing an example of a temperature distribution in the electrochemical cell device. FIG. 4 is an enlarged cross-sectional view of the electrochemical cell device according to the first embodiment. FIG. 5A is a cross-sectional view showing an example of a conductive member according to the first embodiment. FIG. 5B is a cross-sectional view taken along line A-A shown in FIG. 5A. FIG. 6A is a cross-sectional view showing an example of a conductive member located in the first region. FIG. 6B is a cross-sectional view showing an example of a conductive member located in the second region. FIG. 7 is a cross-sectional view showing an example of an electrochemical cell according to the first embodiment. FIG. 8 is an external perspective view showing an example of a module according to the first embodiment. FIG. 9 is an exploded perspective view schematically illustrating an example of a module housing device according to the first embodiment. FIG. 10 is a cross-sectional view illustrating another example of an electrochemical cell device according to the first embodiment. FIG. 11 is a perspective view illustrating an example of an electrochemical cell device according to the second embodiment. FIG. 12 is a cross-sectional view illustrating an example of a temperature distribution in a flat-plate electrochemical cell device. FIG. 13 is a cross-sectional view illustrating an example of an electrochemical cell device according to the second embodiment. FIG. 14 is a cross-sectional view illustrating an example of a first region R1 illustrated in FIG. 13. FIG. 15 is a cross-sectional view illustrating another example of an electrochemical cell device according to the second embodiment. FIG. 16A is a cross-sectional view illustrating an example of an electrochemical cell constituting an electrochemical cell device according to a third embodiment. FIG. 16B is a cross-sectional view illustrating another example of an electrochemical cell according to the third embodiment. FIG. 16C is a cross-sectional view illustrating another example of an electrochemical cell according to the third embodiment.

[0009] In conventional fuel cell stack devices, for example, there are cases where variations in temperature occur during power generation, and there is room for improvement in durability.

[0010] Therefore, there is a need to provide highly durable electrochemical cell devices, modules, and module housing devices.

[0011] Hereinafter, embodiments of an electrochemical cell device, a module, and a module housing device disclosed in the present application will be described in detail with reference to the accompanying drawings. However, the disclosure is not limited to the embodiments described below.

[0012] It should also be noted that the drawings are schematic and that the dimensional relationships and ratios of elements may differ from reality. Furthermore, the drawings may contain parts whose dimensional relationships and ratios differ from one another.

[0013] 1A to 1C, an electrochemical cell constituting an electrochemical cell device according to a first embodiment will be described using an example of a solid oxide fuel cell. The electrochemical cell device may include a cell stack having a plurality of electrochemical cells. An electrochemical cell device having a plurality of electrochemical cells will be simply referred to as a cell stack device.

[0014] FIG. 1A is a cross-sectional view showing an example of an electrochemical cell according to an embodiment. FIG. 1B is a side view of an example of an electrochemical cell according to an embodiment, viewed from the air electrode side. FIG. 1C is a side view of an example of an electrochemical cell according to an embodiment, viewed from the interconnector side. Note that FIGS. 1A to 1C show enlarged views of parts of each component of the electrochemical cell. Hereinafter, the electrochemical cell may also be simply referred to as a cell.

[0015] 1A to 1C, the cell 1 is a hollow, flat, elongated plate. As shown in Fig. 1B, the shape of the entire cell 1 as viewed from the side is, for example, a rectangle with a side length in the length direction L of 5 cm to 50 cm and a length in the width direction W perpendicular to the length direction L of 1 cm to 10 cm. The thickness of the entire cell 1 in the thickness direction T is, for example, 1 mm to 5 mm.

[0016] 1A, the cell 1 includes a conductive support substrate 2, an element section 3, and an interconnector 4. The support substrate 2 is columnar, having a pair of opposing flat surfaces n1, n2 and a pair of arc-shaped side surfaces m connecting the flat surfaces n1, n2.

[0017] The element section 3 is provided on the flat surface n1 of the support substrate 2. The element section 3 has an anode layer 5, a solid electrolyte layer 6, and an air cathode layer 8. In the example shown in FIG. 1A , the interconnector 4 is located on the flat surface n2 of the cell 1. The cell 1 may also have an intermediate layer 7 between the solid electrolyte layer 6 and the air cathode layer 8.

[0018] 1B, the air electrode layer 8 does not extend to the lower end of the cell 1. At the lower end of the cell 1, only the solid electrolyte layer 6 is exposed on the surface of the flat surface n1. As shown in FIG. 1C, the interconnector 4 may extend to the lower end of the cell 1. At the lower end of the cell 1, the interconnector 4 and the solid electrolyte layer 6 are exposed on the surface. As shown in FIG. 1A, the solid electrolyte layer 6 is exposed on the surface of a pair of arcuate side surfaces m of the cell 1. The interconnector 4 does not have to extend to the lower end of the cell 1.

[0019] Each of the components that make up the cell 1 will be described below.

[0020] The support substrate 2 has gas flow channels 2a therein through which gas flows. The example of the support substrate 2 shown in FIG. 1A has six gas flow channels 2a. The support substrate 2 has gas permeability, allowing the fuel gas flowing through the gas flow channels 2a to permeate to the fuel electrode layer 5. The support substrate 2 may be conductive. The conductive support substrate 2 collects electricity generated in the element section 3 to the interconnector 4.

[0021] The material of the support substrate 2 includes, for example, an iron-group metal component and an inorganic oxide. The iron-group metal component may be, for example, Ni (nickel) and / or NiO. The inorganic oxide may be, for example, a specific rare earth element oxide. The rare earth element oxide may include, for example, one or more rare earth elements selected from Sc, Y, La, Nd, Sm, Gd, Dy, and Yb.

[0022] A generally known material can be used for the fuel electrode layer 5. The fuel electrode layer 5 is made of a porous conductive ceramic, such as calcium oxide, magnesium oxide, or ZrO in which a rare earth element oxide is solid-solved. ２ and Ni and / or NiO may be used. The rare earth element oxide may contain, for example, a plurality of rare earth elements selected from Sc, Y, La, Nd, Sm, Gd, Dy, and Yb. Calcium oxide, magnesium oxide, or ZrO in which a rare earth element oxide is solid-solved may be used. ２ The stabilized zirconia may also include partially stabilized zirconia.

[0023] The solid electrolyte layer 6 is an electrolyte and transfers ions between the fuel electrode layer 5 and the air electrode layer 8. At the same time, the solid electrolyte layer 6 has gas barrier properties and makes it difficult for leakage of fuel gas and oxygen-containing gas to occur.

[0024] The material of the solid electrolyte layer 6 is, for example, ZrO in which 3 mol % to 15 mol % of rare earth element oxide, calcium oxide, and magnesium oxide are solid-solved. ２ The rare earth element oxide may contain, for example, one or more rare earth elements selected from Sc, Y, La, Nd, Sm, Gd, Dy, and Yb. The solid electrolyte layer 6 may be, for example, CeO in which La, Nd, Sm, Gd, or Yb is solid-solved. ２ and BaZrO in which Sc or Yb is solid-solved. ３ and BaCeO in which Sc or Yb is solid-solved. ３ may include:

[0025] The air electrode layer 8 is gas permeable. The open porosity of the air electrode layer 8 may be, for example, in the range of 20% to 50%, and particularly in the range of 30% to 50%.

[0026] There are no particular restrictions on the material of the air electrode layer 8 as long as it is a material that is generally used for air electrodes. ３ Conductive ceramics such as perovskite oxides may also be used.

[0027] The material of the air electrode layer 8 may be, for example, a composite oxide in which Sr (strontium) and La (lanthanum) coexist at the A site. Examples of such composite oxides include La ｘ Sr １－ｘ Co ｙ Fe １－ｙ O ３ , La ｘ Sr １－ｘ MnO ３ , La ｘ Sr １－ｘ FeO ３ , La ｘ Sr １－ｘ CoO ３ Here, x is 0<x<1, and y is 0<y<1.

[0028] Furthermore, when the element section 3 has the intermediate layer 7, the intermediate layer 7 functions as a diffusion suppression layer. When elements such as Sr (strontium) contained in the air electrode layer 8 diffuse into the solid electrolyte layer 6, the solid electrolyte layer 6 is filled with, for example, SrZrO ３ The intermediate layer 7 is formed as a resistive layer by making it difficult for Sr to diffuse. ３ It makes it difficult for other oxides with electrical insulating properties to form.

[0029] The material of the intermediate layer 7 is not particularly limited as long as it generally prevents diffusion of elements between the air cathode layer 8 and the solid electrolyte layer 6. The material of the intermediate layer 7 is, for example, cerium oxide (CeO) in which rare earth elements other than Ce (cerium) are dissolved. ２ ) may be included. Examples of such rare earth elements include Gd (gadolinium) and Sm (samarium).

[0030] Furthermore, the interconnector 4 is dense and makes it difficult for leakage of the fuel gas flowing through the gas flow passage 2a located inside the support substrate 2 and the oxygen-containing gas flowing outside the support substrate 2 to occur. The interconnector 4 may have a relative density of 93% or more, particularly 95% or more.

[0031] The material of the interconnector 4 is a lanthanum chromite-based perovskite oxide (LaCrO ３-based oxides), lanthanum strontium titanium-based perovskite-type oxides (LaSrTiO ３ These materials are electrically conductive and are not easily reduced or oxidized even when in contact with a fuel gas such as a hydrogen-containing gas and an oxygen-containing gas such as air. The material of the interconnector 4 may be a metal or an alloy. Details of the electrochemical cell according to this embodiment will be described later.

[0032] <Electrochemical Cell Device> Next, an electrochemical cell device according to this embodiment using the above-described cell 1 will be described with reference to Figures 2A to 2C. Figure 2A is a perspective view showing an example of an electrochemical cell device according to the first embodiment. Figure 2B is a cross-sectional view taken along line XX shown in Figure 2A. Figure 2C is a top view showing an example of an electrochemical cell device according to the first embodiment.

[0033] As shown in FIG. 2A, the cell stack device 10 includes a cell stack 11 having a plurality of cells 1 arranged (stacked) in the thickness direction T of the cells 1 (see FIG. 1A), and a fixing member 12.

[0034] The fixing member 12 has a fixing material 13 and a support member 14. The support member 14 supports the cell 1. The fixing material 13 fixes the cell 1 to the support member 14. The support member 14 also has a support 15 and a gas tank 16. The support 15 and the gas tank 16, which are the support member 14, are made of, for example, metal and are electrically conductive.

[0035] 2B, the support body 15 has insertion holes 15a into which the lower ends of the plurality of cells 1 are inserted. The lower ends of the plurality of cells 1 and the inner wall of the insertion holes 15a are joined with fixing material 13.

[0036] The gas tank 16 has an opening for supplying a reaction gas to the cells 1 through the insertion holes 15a, and a recessed groove 16a located around the opening. The outer peripheral edge of the support 15 is joined to the gas tank 16 by a bonding material 21 filled in the recessed groove 16a of the gas tank 16.

[0037] In the example shown in Fig. 2A, fuel gas is stored in an internal space 22 formed by a support 15, which is the support member 14, and a gas tank 16. A gas circulation pipe 20 is connected to the gas tank 16. The fuel gas is supplied to the gas tank 16 through this gas circulation pipe 20, and is supplied from the gas tank 16 to a gas flow path 2a (see Fig. 1A) inside the cell 1. The fuel gas supplied to the gas tank 16 is generated in a reformer 102 (see Fig. 8), which will be described later.

[0038] The hydrogen-rich fuel gas can be produced by steam reforming the raw fuel, etc. When the fuel gas is produced by steam reforming, the fuel gas contains water vapor.

[0039] The example shown in FIG. 2A includes two rows of cell stacks 11, a support member 14, two supports 15, and a gas tank 16. Each of the two rows of cell stacks 11 has a plurality of cells 1. Each cell stack 11 is fixed to each of the supports 15. The gas tank 16 has two through-holes on its top surface. A support 15 is disposed in each of the through-holes. An internal space 22 is formed by the one gas tank 16 and the two supports 15. Although FIG. 2A shows a cell stack device 10 having two rows of cell stacks 11, the electrochemical cell device may have one row of cell stacks 11, or three or more rows of cell stacks 11.

[0040] The shape of the insertion hole 15a is, for example, an oval shape when viewed from above. For example, the length of the insertion hole 15a in the arrangement direction of the cells 1, i.e., the thickness direction T, is greater than the distance between the two end current collecting members 17 located at both ends of the cell stack 11. For example, the width of the insertion hole 15a is greater than the length of the cell 1 in the width direction W (see FIG. 1A ).

[0041] 2B , the joints between the inner walls of the insertion holes 15a and the lower ends of the cells 1 are filled with and solidified with fixing material 13. This bonds and fixes the inner walls of the insertion holes 15a to the lower ends of the multiple cells 1, respectively, and also bonds and fixes the lower ends of the cells 1 to each other. The gas flow paths 2a of each cell 1 communicate with the internal space 22 of the support member 14 at their lower ends.

[0042] A material with low conductivity, such as glass, can be used for the fixing material 13 and the bonding material 21. Specific materials for the fixing material 13 and the bonding material 21 include amorphous glass, and in particular, crystallized glass.

[0043] Examples of the crystallized glass include SiO ２ -CaO system, MgO-B ２ O ３ System, La ２ O ３ -B ２ O ３ -MgO system, La ２ O ３ -B ２ O ３ -ZnO-based, SiO ２ -CaO-ZnO system materials, etc., may be used, and in particular SiO ２ - MgO-based materials may also be used.

[0044] 2B , a conductive member 18 is interposed between adjacent cells 1 among the plurality of cells 1. The conductive member 18 electrically connects the anode layer 5 of one adjacent cell 1 to the air cathode layer 8 of the other cell 1 in series. More specifically, the conductive member 18 connects the interconnector 4 electrically connected to the anode layer 5 of one adjacent cell 1 to the air cathode layer 8 of the other cell 1. When the interconnector 4 is made of a metal or an alloy, the interconnector 4 and the conductive member 18 may be integrated, or the conductive member 18 may also serve as the interconnector 4. Details of the conductive member 18 will be described later.

[0045] 2B, an end current collecting member 17 is electrically connected to the cell 1 positioned outermost in the arrangement direction of the multiple cells 1. The end current collecting member 17 is connected to a conductive portion 19 that protrudes outside the cell stack 11. The conductive portion 19 collects electricity generated by power generation in the cells 1 and extracts it to the outside. Note that the end current collecting member 17 is not shown in FIG. 2A.

[0046] 2C, the cell stack device 10 has two cell stacks 11A and 11B connected in series to function as a single battery. Therefore, the conductive portion 19 of the cell stack device 10 is divided into a positive terminal 19A, a negative terminal 19B, and a connection terminal 19C.

[0047] The positive terminal 19A is a positive electrode when the power generated by the cell stack 11 is output to the outside, and is electrically connected to the positive-side end current collecting member 17 of the cell stack 11A. The negative terminal 19B is a negative electrode when the power generated by the cell stack 11 is output to the outside, and is electrically connected to the negative-side end current collecting member 17 of the cell stack 11B.

[0048] The connection terminal 19C electrically connects the end current collecting member 17 on the negative electrode side of the cell stack 11A to the end current collecting member 17 on the positive electrode side of the cell stack 11B.

[0049] (Temperature Distribution During Power Generation) Next, the temperature distribution during power generation in an electrochemical cell device will be described with reference to FIG. 3. FIG. 3 is a cross-sectional view showing an example of the temperature distribution in an electrochemical cell device. The cell stack device 10X shown in FIG. 3 corresponds to an enlarged view of a portion of the cell stack 11 included in the cell stack device 10 shown in FIG. 2B. Note that FIG. 3 shows simplified illustrations of, for example, the cells 1, conductive members 18, etc. Also, in other drawings described below, simplified illustrations of components may be used. For ease of explanation, the number of cells 1 included in the cell stack device is shown as eight in FIG. 3 and FIG. 4 described below.

[0050] As shown in FIG. 3 , a conductive member 18 extending in the length direction L is positioned between adjacent cells 1 in the thickness direction T of the cells 1, electrically connecting the adjacent cells 1. In the cell stack device 10X, during power generation, temperatures t1 to t6 are in the order of t1 > t2 > t3 > t4 > t5 > t6, which are located at the center of the thickness direction T (first direction) of the cells 1 and tend to be higher at the upper end in the length direction L away from the fixing material 13. Furthermore, the temperature during power generation tends to decrease toward the end portions in the thickness direction T and the lower end in the length direction L away from these portions. Therefore, the first region R1 located at the center of the thickness direction T (first direction) of the cells 1 may be higher than the second region R2 located at both ends of the thickness direction T (first direction) of the cells 1, for example, which may result in reduced durability.

[0051] Therefore, in this embodiment, the conductive member 18 and / or the cell 1 having different reflectances for infrared light between the first region R1 and the second region R2 are applied.

[0052] <Conductive Member> Figure 4 is an enlarged cross-sectional view of the electrochemical cell device according to the first embodiment. As shown in Figure 4, the conductive member 18 serving as the first member located in the first region R1 has a first portion 181 and a second portion 182. The first portion 181 is located at the upper end of the first region R1 in the longitudinal direction L, where the first portion 181 is likely to become hot during power generation. The second portion 182 is located at the lower end of the first region R1 in the longitudinal direction L, where the second portion 182 is less likely to become hot than the first portion 181. The first portion 181 has a higher reflectance of infrared light than the second portion 182.

[0053] As a result, the amount of heat absorbed by the conductive member 18 is reduced in the first portion 181 compared to the second portion 182, and it is possible to reduce the temperature rise of the conductive member 18. Therefore, it is possible to make it less likely that a decrease in durability due to overheating of the conductive member 18 will occur.

[0054] On the other hand, in the second portion 182, the amount of heat absorbed by the conductive member 18 is greater than in the first portion 181, which promotes a temperature rise in the conductive member 18. This makes it less likely that a decrease in power generation performance due to insufficient heating of the cell stack device 10 will occur.

[0055] Furthermore, the conductive member 183 serving as the second member located in the second region R2 has a lower reflectance of infrared light than the first portion 181. As a result, in the second region R2, which is less likely to become hot than the first region R1, the heat absorbed by the conductive member 183 can promote a temperature rise. This reduces temperature variation during power generation, improving the power generation performance of the cell stack device 10.

[0056] The conductive member 183 only needs to have a lower reflectance for infrared light than the first portion 181 as a whole. The conductive member 183 may have a higher or lower reflectance for infrared light than the second portion 182. The conductive member 183 may also have the same reflectance for infrared light as the second portion 182. The conductive member 183 may have portions with different reflectance for infrared light. When the conductive member 183 has portions with different reflectance for infrared light, the difference in reflectance for infrared light between the portion with high reflectance for infrared light (hereinafter referred to as a "high-reflection portion") and the portion with low reflectance for infrared light (hereinafter referred to as a "low-reflection portion") may be smaller than the difference in reflectance for infrared light between the first portion 181 and the second portion 182. The high-reflection portion of the conductive member 183 may have the same reflectance for infrared light as the first portion 181 or may have a lower reflectance than the first portion 181. The conductive member 183 may have a generally uniform reflectance for infrared light overall.

[0057] Here, the reflectance of infrared light at the first portion 181 can be, for example, 8% to 50%. The reflectance of infrared light at the second portion 182 can be, for example, 3% to 35%. The reflectance of infrared light at the conductive member 183 can be, for example, 3% to 35%. Such reflectance of infrared light can be measured using a near-infrared / infrared spectrophotometer or a Fourier transform infrared spectrophotometer (FTIR). Infrared light refers to light having a wavelength of 700 nm or longer. When comparing the reflectance of infrared light, it is sufficient to compare the average reflectance in a wavelength range of 1500 nm to 2500 nm, for example. The reflectance of infrared light here refers to the average reflectance in the wavelength range of 1500 nm to 2500 nm.

[0058] 5A and 5B, a specific example of the configuration of the conductive member 18 will be described. Fig. 5A is a cross-sectional view showing an example of the conductive member according to the first embodiment.

[0059] 5A, the conductive member 18 has a connection portion 18a connected to cell 1A, one of the adjacent cells 1, and a connection portion 18b connected to cell 1B, the other cell 1. The conductive member 18 also has connecting portions 18c at both ends in the width direction W, which connect the connecting portions 18a and 18b. This allows the conductive member 18 to electrically connect the cells 1 adjacent to each other in the thickness direction T.

[0060] The connecting portions 18a and 18b have contact portions 18a1 and 18b1 that come into contact with the cells 1A and 1B, and non-contact portions 18a2 and 18b2 that do not come into contact with the cells 1A and 1B.

[0061] Fig. 5B is a cross-sectional view taken along line A-A in Fig. 5A. The conductive member 18 extends in the longitudinal direction L of the cell 1. The conductive member 18 has a comb-like shape in cross section, and the connection portions 18a and 18b extend alternately from the coupling portion 18c toward the cells 1A and 1B.

[0062] Next, the conductive members 18 located in the first region R1 and the second region R2 will be described in detail with reference to Figures 6A and 6B. Figure 6A is a cross-sectional view showing an example of a conductive member located in the first region. Figure 6B is a cross-sectional view showing an example of a conductive member located in the second region.

[0063] 6A and 6B, the conductive member 18 may have a substrate 180 and a coating 30 covering the substrate 180. The substrate 180 has electrical conductivity and heat resistance. The substrate 180 contains chromium. The substrate 180 is, for example, stainless steel. The substrate 180 may also contain, for example, a metal oxide.

[0064] The coating 30 may have insulating or low insulating properties. For example, the coating 30 may be made of chromium oxide (Cr ２ O ３ ), aluminum oxide (Al ２ O ３), metal oxides containing Al and / or Si, etc. The metal oxide contained in the coating 30 is, for example, a composite oxide having a spinel structure, such as ZnMnCoO ４ Zn(Co ｘ Mn １－ｘ ) ２ O ４ (0<x<1), Mn １．５ Co １．５ O ４ , MnCo ２ O ４ , CoMn ２ O ４ The metal oxide contained in the coating 30 may be a so-called ABO ３ The oxide may be a perovskite oxide.

[0065] 6A can have a first portion 181 and a second portion 182 with different infrared light reflectances, for example, by differentiating the surface roughness of the coating 30. Specifically, the surface roughness of the coating 30 located in the first portion 181 may be smaller than the surface roughness of the coating 30 located in the second portion 182.

[0066] When the surface roughness of the coating 30 differs between the first portion 181 and the second portion 182, the surface roughness of the coating 30 located in the first portion 181 can be, for example, 0.01 μm or more and 1 μm or less. Also, the surface roughness of the coating 30 located in the second portion 182 can be, for example, 0.5 μm or more and 10 μm or less.

[0067] Furthermore, conductive member 18 may have first portion 181 and second portion 182 that have different reflectances for infrared light, for example, by varying the surface roughness of substrate 180. Specifically, the surface roughness of substrate 180 located at first portion 181 may be smaller than the surface roughness of substrate 180 located at second portion 182.

[0068] When the surface roughness of substrate 180 differs between first portion 181 and second portion 182, the surface roughness of substrate 180 located in first portion 181 can be, for example, 0.01 μm or more and 1 μm or less. Also, the surface roughness of substrate 180 located in second portion 182 can be, for example, 0.5 μm or more and 10 μm or less.

[0069] As a result, the amount of heat absorbed by the conductive member 18 in the first portion 181 is reduced compared to the second portion 182, and it is possible to reduce the temperature rise in the cell stack device 10. This makes it less likely that a decrease in durability due to overheating of the cell stack device 10 will occur.

[0070] 6A may form first portion 181 and second portion 182 by, for example, roughening or smoothing a portion of the surface of coating 30 or substrate 180. Alternatively, first portion 181 and second portion 182 may be formed by changing the degree of roughening and / or smoothing of conductive member 18.

[0071] Furthermore, the reflectance of infrared light of the conductive member 18 may be varied by varying the porosity of the coating 30. Specifically, the porosity of the coating 30 located in the first portion 181 may be smaller than the porosity of the coating 30 located in the second portion 182.

[0072] When the porosity of the coating 30 differs between the first portion 181 and the second portion 182, the porosity of the coating 30 located in the first portion 181 can be, for example, 0.1% or more and 30% or less. Also, the porosity of the coating 30 located in the second portion 182 can be, for example, 10% or more and 60% or less.

[0073] In this way, in the first portion 181, where the porosity of the coating 30 is smaller than that of the second portion 182, the amount of heat absorbed by the conductive member 18 is reduced compared to the second portion 182, and it is possible to reduce the temperature rise in the cell stack device 10. As a result, it is possible to make it less likely that a decrease in durability due to overheating of the cell stack device 10 will occur.

[0074] 6B has a lower reflectance of infrared light than the first portion 181 of the conductive member 18 shown in FIG. 6A. Such conductive member 183 may have, for example, a coating 30 with a larger surface roughness than the coating 30 located on the first portion 181.

[0075] When the surface roughness of the coating 30 differs between the first portion 181 and the conductive member 183, the surface roughness of the coating 30 located in the first portion 181 can be, for example, 0.01 μm or more and 1 μm or less. Furthermore, the surface roughness of the coating 30 of the conductive member 183 can be, for example, 0.5 μm or more and 10 μm or less.

[0076] Furthermore, the conductive member 183 may have a lower reflectance of infrared light than the first portion 181, for example, by making the surface roughness of the base material 180 different from that of the first portion 181. Specifically, the surface roughness of the base material 180 of the conductive member 183 may be greater than the surface roughness of the base material 180 located at the first portion 181.

[0077] When the surface roughness of substrate 180 differs between first portion 181 and conductive member 183, the surface roughness of substrate 180 located in first portion 181 can be, for example, 0.01 μm or more and 1 μm or less. Furthermore, the surface roughness of substrate 180 of conductive member 183 can be, for example, 0.5 μm or more and 10 μm or less.

[0078] Furthermore, the reflectance of infrared light may be made different for the conductive member 183 by, for example, making the porosity of the coating 30 different from that of the first portion 181. Specifically, the porosity of the coating 30 of the conductive member 183 may be greater than the porosity of the coating 30 located in the first portion 181.

[0079] When the porosity of the coating 30 differs between the first portion 181 and the conductive member 183, the porosity of the coating 30 located in the first portion 181 can be, for example, 0.1% or more and 30% or less. Furthermore, the porosity of the coating 30 of the conductive member 183 can be, for example, 10% or more and 60% or less.

[0080] Furthermore, the reflectance of infrared light of conductive member 183 may be made different by, for example, making the porosity of base material 180 different from that of first portion 181. Specifically, the porosity of base material 180 of conductive member 183 may be greater than the porosity of base material 180 located in first portion 181.

[0081] When the porosity of substrate 180 differs between first portion 181 and conductive member 183, the porosity of substrate 180 located in first portion 181 can be, for example, 0% or more and 30% or less. Furthermore, the porosity of substrate 180 of conductive member 183 can be, for example, 1% or more and 30% or less.

[0082] In this way, by making the reflectance of infrared light in the conductive member 183 located in the second region R2 smaller than the reflectance of infrared light in the first portion 181, it is possible to promote temperature rise in the second region R2, which is less likely to become hot than the first region R1, by the amount of heat absorbed by the conductive member 183. This reduces temperature variation during power generation, improving the power generation performance of the cell stack device 10.

[0083] 4 has been described using an example in which the first member located in the first region R1 and the second member located in the second region R2 are conductive members 18, but the cell 1 may have a first member and a second member. In such a case, the cell 1 as the first member has a first portion located on the upper end side of the first region R1 in the length direction L and a second portion located on the lower end side of the length direction L. The first portion of the cell 1 has a higher reflectance of infrared light than the second portion.

[0084] As a result, the amount of heat absorbed by the cell 1 in the first region is reduced compared to the second region, and it is possible to reduce the temperature rise in the cell stack device 10. This makes it less likely that the durability of the cell stack device 10 will decrease due to overheating.

[0085] On the other hand, in the second portion of the cell 1, the amount of heat absorbed by the cell 1 increases compared to the first portion, accelerating the temperature rise of the cell stack device 10. This makes it less likely that the power generation performance will decrease due to insufficient heating of the cell stack device 10.

[0086] Furthermore, the cells 1 serving as the second member located in the second region R2 have a lower reflectance to infrared light than the first portion of the cells 1 located in the first region R1. This allows the heat absorbed by the cells 1 to promote temperature rise in the second region R2, which is less likely to become hot than the first region R1. This reduces temperature variation during power generation, improving the power generation performance of the cell stack device 10.

[0087] Next, the details of the cells 1 located in the first region R1 and the second region R2 will be further described with reference to Fig. 7. Fig. 7 is a cross-sectional view showing an example of an electrochemical cell according to the first embodiment. Fig. 7 shows a simplified view of each element of the cell 1 shown in Fig. 1A.

[0088] 7, the cell 1 has an element section 3 located on a flat surface n2 of a support substrate 2, and an interconnector 4 located on a flat surface n1 opposite to the flat surface n2. Of the element section 3, the fuel electrode layer 5 and solid electrolyte layer 6 extend from the flat surface n2 of the support substrate 2, around the side surface m, and onto the flat surface n1. Note that the gas flow path 2a is not shown in FIG.

[0089] 7 , for example, by varying the surface roughness of the air electrode layer 8, a first member having a first portion and a second portion with different infrared light reflectances and a second member located in the second region R2 can be positioned. Specifically, the surface roughness of the surface 8 a of the air electrode layer 8 located in the first portion may be smaller than the surface roughness of the surface 8 a of the air electrode layer 8 located in the second portion. Furthermore, the surface roughness of the surface 8 a of the air electrode layer 8 located in the second region R2 may be larger than the surface roughness of the surface 8 a of the air electrode layer 8 located in the first portion.

[0090] The surface roughness of the surface 8a located in the first region can be, for example, 0.1 μm to 10 μm, the surface roughness of the surface 8a located in the second region can be, for example, 1 μm to 100 μm, and the surface roughness of the surface 8a located in the second region R2 can be, for example, 1 μm to 100 μm.

[0091] Furthermore, the cell 1 can have a first member having a first portion and a second portion with different infrared light reflectivities, and a second member located in the second region R2, for example, by varying the porosity of the air electrode layer 8. Specifically, the porosity of the air electrode layer 8 located in the first portion may be smaller than the porosity of the air electrode layer 8 located in the second portion. Furthermore, the porosity of the air electrode layer 8 located in the second region R2 may be larger than the porosity of the air electrode layer 8 located in the first portion.

[0092] The porosity of the air electrode layer 8 located in the first portion can be, for example, 20% to 50%. The porosity of the air electrode layer 8 located in the second portion can be, for example, 30% to 60%. The porosity of the air electrode layer 8 located in the second region R2 can be, for example, 30% to 60%.

[0093] Furthermore, in the cell 1, for example, by varying the length in the width direction W of the intermediate layer 7, a first member having a first portion and a second portion with different infrared light reflectances and a second member located in the second region R2 can be located. Specifically, the length in the width direction W of the intermediate layer 7 located in the first portion may be greater than the length in the width direction W of the intermediate layer 7 located in the second portion. Furthermore, the length in the width direction W of the intermediate layer 7 located in the second region R2 may be smaller than the length in the width direction W of the intermediate layer 7 located in the first portion.

[0094] The length in the width direction W of the intermediate layer 7 located in the first portion can be, for example, 1.1 times or more the length in the width direction W of the air cathode layer 8. The length in the width direction W of the intermediate layer 7 located in the second portion can be, for example, 1.01 times or more the length in the width direction W of the air cathode layer 8. The length in the width direction W of the intermediate layer 7 located in the second region R2 can be, for example, 1.01 times or more the length in the width direction W of the air cathode layer 8.

[0095] Furthermore, the cell 1 can be configured such that a first member having a first portion and a second portion with different infrared light reflectances and a second member located in the second region R2 are positioned by, for example, varying the surface roughness of the intermediate layer 7. Specifically, the surface roughness of the surface 7a of the intermediate layer 7 located in the first portion may be smaller than the surface roughness of the surface 7a of the intermediate layer 7 located in the second portion. Furthermore, the surface roughness of the surface 7a of the intermediate layer 7 located in the second region R2 may be larger than the surface roughness of the surface 7a of the intermediate layer 7 located in the first portion.

[0096] The surface roughness of the surface 7a located in the first portion can be, for example, 0.01 μm to 2 μm, the surface roughness of the surface 7a located in the second portion can be, for example, 0.5 μm to 3 μm, and the surface roughness of the surface 7a located in the second region R2 can be, for example, 0.5 μm to 3 μm.

[0097] Furthermore, the cell 1 can be configured to have a first member having a first portion and a second portion with different infrared light reflectances, and a second member located in the second region R2, by, for example, varying the porosity of the intermediate layer 7. Specifically, the porosity of the intermediate layer 7 located in the first portion may be smaller than the porosity of the intermediate layer 7 located in the second portion. Furthermore, the porosity of the intermediate layer 7 located in the second region R2 may be larger than the porosity of the intermediate layer 7 located in the first portion.

[0098] The porosity of the intermediate layer 7 located in the first region can be, for example, 0.1% to 30%. The porosity of the intermediate layer 7 located in the second region can be, for example, 10% to 50%. The porosity of the intermediate layer 7 located in the second region R2 can be, for example, 10% to 50%.

[0099] Furthermore, in the cell 1, for example, by varying the surface roughness of the solid electrolyte layer 6, a first member having a first portion and a second portion with different infrared light reflectances and a second member located in the second region R2 can be located. Specifically, the surface roughness of the surface 6a of the solid electrolyte layer 6 located in the first portion may be smaller than the surface roughness of the surface 6a of the solid electrolyte layer 6 located in the second portion. Furthermore, the surface roughness of the surface 6a of the solid electrolyte layer 6 located in the second region R2 may be larger than the surface roughness of the surface 6a of the solid electrolyte layer 6 located in the first portion.

[0100] The surface roughness of the surface 6 a located in the first portion can be, for example, 0.01 μm to 2 μm, the surface roughness of the surface 6 a located in the second portion can be, for example, 0.5 μm to 5 μm, and the surface roughness of the surface 6 a located in the second region R2 can be, for example, 0.5 μm to 5 μm.

[0101] Furthermore, the cell 1 can have a first member having a first portion and a second portion with different infrared light reflectances, and a second member located in the second region R2, for example, by varying the porosity of the solid electrolyte layer 6. Specifically, the porosity of the solid electrolyte layer 6 located in the first portion may be smaller than the porosity of the solid electrolyte layer 6 located in the second portion. Furthermore, the porosity of the solid electrolyte layer 6 located in the second region R2 may be larger than the porosity of the solid electrolyte layer 6 located in the first portion.

[0102] The porosity of the solid electrolyte layer 6 located in the first portion can be, for example, 0.1% to 3%. The porosity of the solid electrolyte layer 6 located in the second portion can be, for example, 1% to 10%. The porosity of the solid electrolyte layer 6 located in the second region R2 can be, for example, 1% to 10%.

[0103] Furthermore, in the cell 1, for example, by varying the length in the width direction W of the interconnector 4, a first member having a first portion and a second portion with different infrared light reflectances and a second member located in the second region R2 can be located. Specifically, the length in the width direction W of the interconnector 4 located in the first portion may be smaller than the length in the width direction W of the interconnector 4 located in the second portion. Furthermore, the length in the width direction W of the interconnector 4 located in the second region R2 may be larger than the length in the width direction W of the interconnector 4 located in the first portion.

[0104] The length in the width direction W of the interconnector 4 located in the first portion can be, for example, 1.01 times or more the length in the width direction W of the air cathode layer 8. The length in the width direction W of the interconnector 4 located in the second portion can be, for example, 1.1 times or more the length in the width direction W of the air cathode layer 8. The length in the width direction W of the interconnector 4 located in the second region R2 can be, for example, 1.1 times or more the length in the width direction W of the air cathode layer 8.

[0105] Furthermore, the cell 1 can be configured such that a first member having a first portion and a second portion with different infrared light reflectances and a second member located in the second region R2 are positioned, for example, by varying the surface roughness of the interconnector 4. Specifically, the surface roughness of the surface 4a of the interconnector 4 located in the first portion may be smaller than the surface roughness of the surface 4a of the interconnector 4 located in the second portion. Furthermore, the surface roughness of the surface 4a of the interconnector 4 located in the second region R2 may be larger than the surface roughness of the surface 4a of the interconnector 4 located in the first portion.

[0106] The surface roughness of the surface 4a located in the first portion can be, for example, 0.01 μm to 2 μm, the surface roughness of the surface 4a located in the second portion can be, for example, 0.5 μm to 10 μm, and the surface roughness of the surface 4a located in the second region R2 can be, for example, 0.5 μm to 10 μm.

[0107] Furthermore, the cell 1 can be configured to have a first member having a first portion and a second portion with different infrared light reflectivities, and a second member located in the second region R2, for example, by varying the porosity of the interconnector 4. Specifically, the porosity of the interconnector 4 located in the first portion may be smaller than the porosity of the interconnector 4 located in the second portion. Furthermore, the porosity of the interconnector 4 located in the second region R2 may be larger than the porosity of the interconnector 4 located in the first portion.

[0108] The porosity of the interconnector 4 located in the first region can be, for example, 0.1% or more and 3% or less. The porosity of the interconnector 4 located in the second region can be, for example, 1% or more and 10% or less. The porosity of the interconnector 4 located in the second region R2 can be, for example, 1% or more and 10% or less.

[0109] Furthermore, when adjacent cells 1 in the thickness direction T are bonded via a bonding material (not shown), the surface roughness of the bonding material can be made different to position a first member having a first portion and a second portion with different infrared light reflectances, and a second member located in the second region R2. Specifically, the surface roughness of the bonding material located in the first portion may be smaller than the surface roughness of the bonding material located in the second portion. Furthermore, the surface roughness of the bonding material located in the second region R2 may be larger than the surface roughness of the bonding material located in the first portion.

[0110] The surface roughness of the bonding material located in the first region can be, for example, 0.1 μm to 10 μm, the surface roughness of the bonding material located in the second region can be, for example, 1 μm to 100 μm, and the surface roughness of the bonding material located in the second region R2 can be, for example, 1 μm to 100 μm.

[0111] Furthermore, when adjacent cells 1 in the thickness direction T are bonded via a bonding material (not shown), the porosity of the bonding material can be made different to position a first member having a first portion and a second portion with different infrared light reflectances, and a second member located in the second region R2. Specifically, the porosity of the bonding material located in the first portion may be smaller than the porosity of the bonding material located in the second portion. Furthermore, the porosity of the bonding material located in the second region R2 may be larger than the porosity of the bonding material located in the first portion.

[0112] The porosity of the bonding material located in the first region can be, for example, 20% to 50%. The porosity of the bonding material located in the second region can be, for example, 30% to 60%. The porosity of the bonding material located in the second region R2 can be, for example, 30% to 60%.

[0113] The surface roughness of the conductive member 18 and the cell 1 may be varied by, for example, roughening or smoothing a portion of the surface of each portion, or by varying the degree of roughening and / or smoothing. The surface roughness of each member can be determined based on the arithmetic mean roughness Ra defined in JIS B0633;2001. The arithmetic mean roughness Ra can be calculated by image analysis of a cross section perpendicular to the surface of the conductive member 18 or the cell 1, respectively.

[0114] The porosity of each portion of the conductive member 18 and the cell 1 can be measured based on the results of observing a cross section of the conductive member 18 or the cell 1 with a scanning electron microscope (SEM).

[0115] The conductive member 18 and the cell 1 according to this embodiment may be produced by any method, and are not particularly limited.

[0116] <Module> Next, a module according to this embodiment using the above-described cell stack device 10 will be described with reference to Fig. 8. Fig. 8 is an external perspective view showing the module according to the first embodiment. Fig. 8 shows a state in which the front and rear surfaces, which are part of the storage container 101, have been removed and the cell stack device 10 of the fuel cell stored inside has been pulled out to the rear.

[0117] 8, the module 100 includes a storage container 101 and a cell stack device 10 housed in the storage container 101. A reformer 102 is disposed above the cell stack device 10.

[0118] The reformer 102 reforms raw fuel such as natural gas or kerosene to generate fuel gas, which is then supplied to the cell 1. The raw fuel is supplied through a raw fuel supply pipe 103. The reformer 102 may include a vaporizer 102a that vaporizes water, and a reformer 102b. The reformer 102b includes a reforming catalyst (not shown) and reforms the raw fuel into fuel gas. Such a reformer 102 can perform steam reforming, which is a highly efficient reforming reaction.

[0119] The fuel gas produced in the reformer 102 is supplied to the gas flow channel 2 a of the cell 1 (see FIG. 1A) through the gas distribution pipe 20 , the gas tank 16 , and the support member 14 .

[0120] Furthermore, in the module 100 having the above-described configuration, the temperature inside the module 100 during normal power generation reaches approximately 500°C to 1000°C due to the combustion of gas and the power generation of the cells 1.

[0121] In such a module 100, as described above, the highly durable cell stack device 10 is housed therein, and thus the module 100 can be made highly durable.

[0122] <Module Enclosure Device> Fig. 9 is an exploded perspective view showing an example of a module enclosure device according to the first embodiment. The module enclosure device 110 includes an outer case 111, the module 100 shown in Fig. 8, and auxiliary equipment (not shown). The auxiliary equipment operates the module 100. The module 100 and the auxiliary equipment are housed in the outer case 111. Note that Fig. 9 omits some components.

[0123] An exterior case 111 of a module accommodating device 110 shown in Fig. 9 has support columns 112 and an exterior plate 113. A partition plate 114 divides the interior of the exterior case 111 into upper and lower sections. The space above the partition plate 114 in the exterior case 111 is a module accommodating chamber 115 that accommodates the module 100, and the space below the partition plate 114 in the exterior case 111 is an auxiliary equipment accommodating chamber 116 that accommodates auxiliary equipment for operating the module 100. Note that in Fig. 8, the auxiliary equipment accommodated in the auxiliary equipment accommodating chamber 116 is not shown.

[0124] The partition plate 114 also has an air flow port 117 for allowing air from the auxiliary equipment housing chamber 116 to flow toward the module housing chamber 115. The exterior plate 113 that constitutes the module housing chamber 115 has an exhaust port 118 for exhausting air from within the module housing chamber 115.

[0125] In such a module accommodating device 110, as described above, highly durable modules 100 are provided in the module accommodating chamber 115, so that the module accommodating device 110 can be made highly durable.

[0126] FIG. 10 is a cross-sectional view showing another example of the electrochemical cell device according to the first embodiment. The cell stack device 10 shown in FIG. 10 differs from the conductive member 18 according to the above embodiment in that the conductive member 18 includes a first member 18A and a second member 18B having different infrared light reflectivities. The infrared light reflectivity of the first member 18A is configured to be higher than the infrared light reflectivity of the second member 18B, and the first member 18A and the second member 18B are disposed between adjacent cells 1. In this way, even when the conductive member 18 includes the first member 18A and the second member 18B having different infrared light reflectivities, temperature variation in the first region R1 (see FIG. 4 ) is reduced. Therefore, this configuration increases the durability of the cell stack device 10.

[0127] The first member 18A and the second member 18B can be fabricated, for example, in accordance with the conductive member 183 shown in Fig. 6B. The first member 18A and the second member 18B may be in contact with each other or may be spaced apart from each other.

[0128] Second Embodiment FIG. 11 is a perspective view showing an example of an electrochemical cell device according to a second embodiment. The cell stack device 10A shown in FIG. 11 is an electrochemical cell device in which flat electrochemical cells, each having an element unit 3A and a conductive member 18 sandwiching the element unit 3A, are stacked. The element unit 3A has a solid electrolyte layer (e.g., solid electrolyte layer 6) and a first electrode layer (e.g., fuel electrode layer 5) and a second electrode layer (e.g., air electrode layer 8) sandwiching the solid electrolyte layer. The element unit 3A may also have an intermediate layer (e.g., intermediate layer 7) located between the solid electrolyte layer and the second electrode layer. The conductive member 18 has a flow path (not shown) through which a reactant gas flows, and the flow path is sealed with a sealing member (not shown). End current collecting members 91 and 92 are located at both ends of the cell stack device 10A.

[0129] FIG. 12 is a cross-sectional view showing an example of the temperature distribution in a flat-plate electrochemical cell. As shown in FIG. 12, during power generation, temperatures t11 to t15 in the cell stack device 10Y tend to be higher in the center of the cell stack device 10Y in the order t11 > t12 > t13 > t14 > t15. Furthermore, the temperature during power generation tends to decrease toward both ends in the Y-axis and Z-axis directions, away from the center. Therefore, the first region R1 located in the center of the element unit 3A in the thickness direction (Z-axis direction) may be higher than the second region R2 located at both ends of the element unit 3A in the thickness direction (Z-axis direction), which may result in reduced durability. While FIG. 12 shows a cross-sectional view along the Y-Z plane, the same can be said for a cross-section along the Z-X plane.

[0130] Therefore, in this embodiment, a conductive member 18 having different reflectances for infrared light is applied between the first region R1 and the second region R2. Fig. 13 is a cross-sectional view showing an example of an electrochemical cell device according to the second embodiment.

[0131] 13 , the conductive member 18 located in the first region R1 has a first portion 181 and a second portion 182. The first portion 181 has a higher reflectance of infrared light than the second portion 182. This increases the reflectance of infrared light in the conductive member 18 located in the first portion 181, which is a portion that is prone to high temperatures, compared to other portions, thereby reducing the amount of heat absorbed by the conductive member 18 and reducing the temperature rise in the cell stack device 10A. This makes it less likely that a decrease in durability due to overheating of the cell stack device 10A will occur.

[0132] On the other hand, in the second region 182, the amount of heat absorbed by the conductive member 18 is greater than in the first region 181, which promotes a temperature rise in the cell stack device 10. This makes it less likely that a decrease in power generation performance due to insufficient heating of the cell stack device 10 will occur.

[0133] Furthermore, the conductive member 183 serving as the second member located in the second region R2 has a lower reflectance of infrared light than the first portion 181. As a result, in the second region R2, which is less likely to become hot than the first region R1, the heat absorbed by the conductive member 183 can promote a temperature rise. This reduces temperature variation during power generation, improving the power generation performance of the cell stack device 10A.

[0134] Fig. 14 is a cross-sectional view showing an example of the first region R1 shown in Fig. 13. In the conductive members 18 located in the first region R1 of the cell stack device 10A, conductive member 18-1 connected to one adjacent element unit 3A and conductive member 18-2 connected to the other adjacent element unit 3A are electrically connected via conductive member 18-3, which is an interconnector. Hereinafter, conductive members 18-1 to 18-3 located between element units 3A may be collectively referred to as conductive members 18.

[0135] As described above, the temperature near the center of the cell stack device 10A, which becomes hot during power generation, is difficult to reduce, which can result in variations in temperature within the cell stack device 10A. Specifically, the temperature in the center of the cell stack device 10A is more likely to rise than on the outer edge side, which is farther from the center of the cell stack device 10A, and for example, the temperature may become higher than that suitable for power generation, which can lead to a decrease in durability.

[0136] 14 , temperature variations may be reduced by applying a conductive member 18 having a first portion 181 and a second portion 182 between the element units 3A located in the first region R1 of the cell stack device 10A. Specifically, the conductive member 18 is positioned so that the first portion 181 is connected to the central portion between the element units 3A in the X-axis direction and / or the Y-axis direction, and the second portion 182 is connected to a portion away from the central portion between the element units 3A in the X-axis direction and / or the Y-axis direction. The reflectance of infrared light at the first portion 181 is lower than the reflectance of infrared light at the second portion 182.

[0137] As a result, the amount of current flowing through the first portion 181 is less than that through the second portion 182, reducing the temperature rise in the first portion 181. Therefore, according to this embodiment, the durability of the cell stack device 10A is increased.

[0138] In the above description, the conductive members 18-1 to 18-3 are collectively referred to as the conductive member 18. However, a conductive member 18-3 different from the conductive members 18-1 and 18-2 may be used as a third member, and the conductive members 18-1 and 18-2 may be connected in series. The surface roughness and / or porosity of the conductive members 18-1 to 18-3 may be the same or different.

[0139] FIG. 15 is a cross-sectional view showing another example of an electrochemical cell device according to the second embodiment. The cell stack device 10B shown in FIG. 15 differs from the conductive member 18 shown in FIG. 14 in that the conductive member 18 located in the first region R1 includes a first member 18A and a second member 18B having different infrared light reflectivities. The infrared light reflectivity of the first member 18A is higher than that of the second member 18B, and the first member 18A and the second member 18B are disposed between adjacent element units 3A. In this way, even when the conductive member 18 includes the first member 18A and the second member 18B having different infrared light reflectivities, the temperature rise in the central portion of the cell stack device 10B is reduced. Therefore, this configuration increases the durability of the cell stack device 10B.

[0140] Furthermore, the conductive member 183 located in the second region R2 (see FIG. 13 ) has a lower reflectance of infrared light than the second portion 182 or the second member 18B. This allows the heat absorbed by the conductive member 183 to promote temperature rise in the second region R2, which is less likely to become hot. This reduces temperature variation during power generation, improving power generation performance. Note that, like the conductive member 18 located in the first region R1, the conductive member 18-1 connected to one adjacent element unit 3A and the conductive member 18-2 connected to the other adjacent element unit 3A may also be electrically connected via the conductive member 18-3, which is an interconnector.

[0141] Furthermore, in the above description, the cell stack devices 10A, 10B are exemplified in which the first member located in the first region R1 and the second member located in the second region R2 are conductive members 18. However, the element unit 3A may have both the first member and the second member. In such a case, the element unit 3A as the first member has a first portion located in the center of the first region R1 in the X-axis direction and / or Y-axis direction, and a second portion located outside the first portion. The first portion of the element unit 3A has a higher reflectivity for infrared light than the second portion.

[0142] As a result, the amount of heat absorbed by the element unit 3A is reduced in the first portion compared to the second portion, and the temperature rise in the cell stack devices 10A, 10B can be reduced, making it less likely that the durability of the cell stack devices 10A, 10B will decrease due to overheating.

[0143] On the other hand, in the second portion of the element unit 3A, the amount of heat absorbed by the element unit 3A is greater than in the first portion, which promotes a temperature rise in the cell stack devices 10A, 10B. This makes it less likely that a decrease in power generation performance due to insufficient heating of the cell stack devices 10A, 10B will occur.

[0144] Furthermore, the element portion 3A serving as the second member located in the second region R2 has a lower reflectance to infrared light than the first portion of the element portion 3A located in the first region R1. This allows the heat absorbed by the element portion 3A to promote temperature rise in the second region R2, which is less likely to become hot than the first region R1. This reduces temperature variation during power generation, improving the power generation performance of the cell stack devices 10A, 10B.

[0145] [Third Embodiment] Fig. 16A is a cross-sectional view showing an example of an electrochemical cell constituting an electrochemical cell device according to a third embodiment. Figs. 16B and 16C are cross-sectional views showing another example of an electrochemical cell according to the third embodiment. In this embodiment, a cell stack device 10C is formed by applying the cell 1 shown in Figs. 16A to 16C to the electrochemical cell device shown in Fig. 2A or 11.

[0146] As shown in FIGS. 16A to 16C , the cell 1 includes an element portion 3C, which includes a stack of an anode layer 5, a solid electrolyte layer 6, and an air cathode layer 8, and a support substrate 2. The element portion 3C may include an intermediate layer 7 located between the solid electrolyte layer 6 and the air cathode layer 8. The support substrate 2 has through-holes or pores at a location where it contacts the anode layer 5 of the element portion 3C, and includes a member 120 located outside the gas flow path 2a. The support substrate 2 allows gas to flow between the gas flow path 2a and the element portion 3C. The support substrate 2 may include, for example, one or more metal members. The material of the metal member may be an alloy containing chromium. The metal member may have a conductive coating layer. The support substrate 2 is a conductive member that electrically connects adjacent cells 1 to each other. The element portion 3C may be formed directly on the support substrate 2, or may be bonded to the support substrate 2 with a bonding material.

[0147] In the example shown in Fig. 16A, the side surface of the anode layer 5 is covered with a solid electrolyte layer 6, which airtightly seals a gas flow channel 2a through which the fuel gas flows. As shown in Fig. 16B, the side surface of the anode layer 5 may be covered and sealed with a dense sealant 9. The sealant 9 covering the side surface of the anode layer 5 may have electrical insulating properties. The material of the sealant 9 may be, for example, glass or ceramics.

[0148] Furthermore, the gas flow path 2a of the support substrate 2 may be formed by a member 120 having projections and recesses as shown in FIG. 16C.

[0149] In this embodiment, the member 120 is joined to the air cathode layer 8 of another adjacent cell 1 via another conductive member such as an inter-cell connecting member and a bonding material. Note that the member 120 may also be in direct contact with the air cathode layer 8 of another cell 1 without the intervention of another conductive member or the like.

[0150] In this embodiment, a cell 1 including a support substrate 2 (conductive member 18) having a first portion 181 and a second portion 182 is arranged in the first region R1 of the cell stack device 10C. Specifically, the first portion 181 of the support substrate 2 (conductive member 18) is positioned in a portion 1a of the cell 1 that is likely to become relatively hot, and the second portion 182 is positioned in a portion 1b of the cell 1 that is likely to become relatively cold. Because the infrared light reflectance of the first portion 181 is lower than that of the second portion 182, the first portion 181 absorbs less heat than the second portion 182, thereby reducing the temperature rise in portion 1a. Therefore, this embodiment improves the durability of the support substrate 2 (conductive member 18) and the cell stack device 10C. Note that in Figures 16A to 16C, the portion 1a of the cell 1 that is likely to become relatively hot is shown as being near the center of the element unit 3C, as in the second embodiment. However, as in the first embodiment, the portion 1a of the cell 1 that is likely to become relatively hot may be near the fuel gas outlet.

[0151] The first region R1 and the second region R2 are not limited to the examples shown in Figures 3, 4, 12, and 13. The first region R1 and the second region R2 can be set as appropriate depending on the structure, characteristics, etc. of the cell stack of the electrochemical cell device. For example, one conductive member 18 sandwiched between two cells 1 located adjacent to the first region R1 at the center of the cell stack may have a first portion and a second portion, and the infrared light reflectance of one conductive member 18 located in the second region R2 at one end of the cell stack may be lower than the infrared light reflectance of the first portion 181.

[0152] Furthermore, the arrangement and ratio of the first portion 181 and the second portion 182 of the conductive member 18 located in the first region R1 can be set appropriately depending on the structure of the cell 1 located in the first region R1.

[0153] Furthermore, in the above description, the cell stack device 10C is exemplified, in which the first member located in the first region R1 and the second member located in the second region R2 are conductive members 18. However, the element portion 3C may have a first member and a second member. In such a case, the element portion 3C as the first member has a first portion located in the portion 1a of the cell 1 in the first region R1, and a second portion located in the portion 1b. The first portion of the element portion 3C has a higher reflectance for infrared light than the second portion.

[0154] As a result, the amount of heat absorbed by the element unit 3C is reduced in the first portion compared to the second portion, and the temperature rise in the cell stack device 10C can be reduced, making it less likely that the durability of the cell stack device 10C will decrease due to overheating.

[0155] On the other hand, in the second portion of the element unit 3C, the amount of heat absorbed by the element unit 3C is greater than in the first portion, which promotes a temperature rise in the cell stack device 10C. This makes it less likely that a decrease in power generation performance due to insufficient heating of the cell stack device 10C will occur.

[0156] Furthermore, the element portion 3C serving as the second member located in the second region R2 has a lower reflectance for infrared light than the first portion of the element portion 3C located in the first region R1. This allows the heat absorbed by the element portion 3C to promote temperature rise in the second region R2, which is less likely to become hot than the first region R1. This reduces temperature variation during power generation, improving the power generation performance of the cell stack device 10C.

[0157] Other Embodiments In the above-described embodiments, a fuel cell, a fuel cell stack device, a fuel cell module, and a fuel cell device are shown as examples of a "battery chemical cell," a "battery chemical cell device," a "module," and a "module housing device." However, other examples may be an electrolytic cell, an electrolytic cell stack device, an electrolytic module, and an electrolytic device, respectively. The electrolytic cell has a hydrogen electrode and an oxygen electrode, and decomposes water vapor into hydrogen and oxygen, or decomposes carbon dioxide into carbon monoxide and oxygen, when supplied with electric power. Furthermore, in the above-described embodiments, an oxide ion conductor or a hydrogen ion conductor is shown as an example of the electrolyte material of the electrochemical cell, but a hydroxide ion conductor may also be used. Such an electrolytic cell, an electrolytic cell stack device, an electrolytic module, and an electrolytic device can improve durability and electrolysis performance.

[0158] The present disclosure has been described in detail above, but the present disclosure is not limited to the above-described embodiments, and various modifications, improvements, etc. are possible within the scope that does not deviate from the gist of the present disclosure.

[0159] In one embodiment, (1) an electrochemical cell device includes a plurality of element portions arranged in a first direction; and conductive members located between adjacent element portions in the first direction, wherein a first member having a first portion and a second portion having a reflectance for infrared light different from that of the first portion is located in a first region located in the center of the first direction; and a second member having a reflectance for infrared light lower than that of the first portion is located in a second region located at an end of the first direction.

[0160] (2) In the electrochemical cell device of (1) above, the first region may have a higher reflectance to infrared light than the second region.

[0161] (3) In the electrochemical cell device of (1) or (2) above, the first region may have a higher maximum temperature than the second region.

[0162] (4) In the electrochemical cell device according to any one of (1) to (3) above, the first member and the second member may be included in the element section.

[0163] (5) In the electrochemical cell device according to any one of (1) to (4) above, the first member and the second member may be included in the conductive member.

[0164] (6) In the electrochemical cell device of any one of (1) to (5) above, the first portion may be located at one end side in a second direction intersecting the first direction, and the second portion may be located at the other end side in the second direction.

[0165] (7) In the electrochemical cell device of any one of (1) to (5) above, the first portion may be located at a center portion in a second direction intersecting the first direction, and the second portion may be located at an end portion in the second direction.

[0166] In one embodiment, (8) an electrochemical cell device includes: a plurality of element units arranged in a first direction; and conductive members located between adjacent element units in the first direction, wherein a first member and a second member having a reflectance for infrared light different from that of the first member are located in a first region located in the center of the first direction; and a third member having a reflectance for infrared light lower than that of the first member is located in a second region located at an end of the first direction.

[0167] In one embodiment, (9) a module includes the electrochemical cell device according to any one of (1) to (8) above, and a container that houses the electrochemical cell device.

[0168] In one embodiment, (10) a module housing device includes the module of (9) above, an auxiliary device for operating the module, and an exterior case for housing the module and the auxiliary device.

[0169] The disclosed embodiments should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

[0170] REFERENCE SIGNS LIST 1 Cell 3, 3A, 3C Element section 10 Cell stack device 11 Cell stack 12 Fixing member 13 Fixing material 14 Supporting member 15 Support body 16 Gas tank 17 End current collecting member 18 Conductive member 100 Module 110 Module accommodating device 181 First portion 182 Second portion 183 Conductive member

Claims

1. A plurality of element parts arranged in a first direction, and Conductive members respectively positioned between the element parts adjacent to each other in the first direction are provided, In a first region located at the central part in the first direction, a first member having a first part and a second part whose infrared light reflectance is different from that of the first part is positioned, In a second region located at the end in the first direction, a second member having a lower infrared light reflectance than the first part is positioned Electrochemical cell device.

2. The infrared light reflectance of the first part is higher than that of the second part The electrochemical cell device according to Claim 1.

3. The highest temperature of the first region is higher than that of the second region The electrochemical cell device according to Claim 1.

4. The first member and the second member are those possessed by the element part The electrochemical cell device according to Claim 1.

5. The first member and the second member are those possessed by the conductive member The electrochemical cell device according to Claim 1.

6. The first part is positioned on one end side in a second direction intersecting the first direction, The second part is positioned on the other end side in the second direction The electrochemical cell device according to Claim 1.

7. The first part is positioned at the central part in a second direction intersecting the first direction, The second part is positioned at the end in the second direction The electrochemical cell device according to Claim 1.

8. A plurality of element parts arranged in a first direction, and Conductive members respectively positioned between the element parts adjacent to each other in the first direction are provided, In a first region located at the central part in the first direction, a first member and a second member whose infrared light reflectance is different from that of the first member are positioned, In a second region located at the end in the first direction, a third member having a lower infrared light reflectance than the first member is positioned Electrochemical cell device.

9. The electrochemical cell device according to any one of Claims 1 to 8, and A storage container for storing the electrochemical cell device A module comprising.

10. The module according to Claim 9, and Auxiliary equipment for operating the module, An exterior case for housing the module and the auxiliary equipment A module housing device comprising.