Adhesive structure, semiconductor device, motor and flying object

JPWO2024202009A5Active Publication Date: 2025-03-06MITSUBISHI ELECTRIC CORP
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Patent Information

Application Number
JP2023552194
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2023-03-31
Publication Date
2025-03-06
Estimated Expiration
2043-03-31

AI Technical Summary

Technical Problem

Existing adhesives used in semiconductor devices and motors face issues with high thermal stress due to temperature cycling, leading to reduced adhesive strength, cracking, and peeling, especially those with high heat resistance.

Method used

An adhesive structure comprising a thin film made of epoxy resin with a porous skeleton impregnated with adhesive, which includes thermally and/or electrically conductive materials, providing a flexible and stress-relieving bond.

Benefits of technology

The adhesive structure effectively relieves thermal stress, maintains adhesive strength, and prevents cracking, even under severe temperature fluctuations, enhancing durability and reliability in high-temperature environments.

✦ Generated by Eureka AI based on patent content.

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Patent Text Reader

Abstract

The bonded structure (100) includes a porous thin film (11) made of an epoxy resin with pores formed by a porous skeleton, and the pores of the porous thin film (11) are impregnated with an adhesive (13). This configuration not only adequately relieves thermal stress, but also provides excellent adhesion.
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Description

[Technical Field]

[0001] The present application relates to an adhesive structure, a semiconductor device, and a motor. and flying body It is related to. [Background technology]

[0002] In recent years, efforts have been made to improve the high-temperature resistance of semiconductor devices and motor drive parts, and heat resistance is also being demanded of the adhesives used to bond these components. Epoxy adhesives are an example of adhesives that have high adhesive strength and can withstand high temperatures. While traditionally used epoxy adhesives have only a heat resistance of around 180°C at most, adhesives with heat resistance of over 200°C have recently begun to appear on the market.

[0003] However, adhesives with high heat resistance generally have issues such as brittle cured products and poor adhesive strength.In addition, when thermal stress is applied due to temperature cycling, the adhesive strength cannot be guaranteed, resulting in cracks or peeling from the adherend.

[0004] In order to sufficiently relieve the thermal stress of the adhesive between a semiconductor element and a wiring circuit board in the application of bonding to a semiconductor device, for example, Patent Document 1 discloses an adhesive sheet having a structure in which adhesive layers are formed on both sides of a sheet-like porous substrate. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2000-17240 A (paragraph 0010, Figure 1) Summary of the Invention [Problem to be solved by the invention]

[0006] However, the adhesive sheet disclosed in Patent Document 1 has a problem in that it cannot exhibit the strength required for structural adhesion because it uses a pressure-sensitive adhesive in the adhesive layer.

[0007] The present application has been made to solve the above-mentioned problems, and provides an adhesive structure, a semiconductor device, and a motor that can sufficiently relieve thermal stress and have excellent adhesiveness. and flying body The purpose is to provide the following. [Means for solving the problem]

[0008] The bonded structure disclosed in the present application comprises a thin film made of an epoxy resin in which pores are formed by a porous skeleton, and the pores of the thin film are impregnated with an adhesive. An adhesive structure, wherein the thin film comprises a thermally conductive material and / or an electrically conductive material. It is characterized by:

[0009] The semiconductor device disclosed in the present application has the above-mentioned Disclosed in this application The device is characterized by comprising a semiconductor element provided via an adhesive structure, bonding wires connecting electrodes provided on the surface of the substrate to electrodes provided on the surface of the semiconductor element, and a sealing resin that seals the semiconductor element. The semiconductor device disclosed in the present application is characterized in that it comprises a thin film made of an epoxy resin on the surface of a substrate, with pores formed by a porous skeleton, a semiconductor element provided in the pores of the thin film via an adhesive structure impregnated with an adhesive, bonding wires connecting electrodes provided on the surface of the substrate and electrodes provided on the surface of the semiconductor element, and an encapsulating resin that encapsulates the semiconductor element.

[0010] The motor disclosed in the present application comprises a cylindrical steel plate attached to a shaft and the above-mentioned outer periphery of the steel plate. Disclosed in this application and a magnet bonded via an adhesive structure. The motor disclosed in the present application is characterized by comprising a cylindrical steel plate attached to a shaft, a thin film made of epoxy resin having pores formed by a porous skeleton on the outer periphery of the steel plate, and a magnet adhered to the pores of the thin film via an adhesive structure impregnated with an adhesive.

[0011] The flying object disclosed in the present application is a flying object equipped with a compressor, and the above-mentioned method is used for bonding sensors and parts used in the compressor. Disclosed in this application It is characterized by using an adhesive structure. The flying object disclosed in the present application is a flying object equipped with a compressor, and is characterized in that an adhesive structure is used for bonding sensors and components used in the compressor, the adhesive structure comprising a thin film made of epoxy resin with pores formed by a porous skeleton, and the pores of the thin film are impregnated with an adhesive. [Effects of the Invention]

[0013] According to the present application, the bonded structure not only can sufficiently relieve thermal stress but also has excellent adhesive properties. [Brief explanation of the drawings]

[0014] [Figure 1] 1 is a cross-sectional view showing the configuration of an adhesive structure according to embodiment 1. FIG. [Figure 2] FIG. 2 is a cross-sectional view showing a state in which bonding is performed using the bonded structure according to the first embodiment. [Figure 3] 4 is a diagram showing the rate of change in adhesive strength of the adhesive structure according to the first embodiment. FIG. [Figure 4] FIG. 10 is a cross-sectional view showing the configuration of a semiconductor device using an adhesive structure according to a second embodiment. [Figure 5] FIG. 11 is a cross-sectional view showing the configuration of an SPM motor using an adhesive structure according to a third embodiment. [Figure 6] FIG. 10 is a block diagram showing the configuration of an adhesive structure according to a fourth embodiment. [Figure 7] FIG. 10 is a system flow diagram showing the flow of operation of an aviation system using an adhesive structure according to a fourth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0015] Embodiment 1 Fig. 1 is a cross-sectional view showing the configuration of an adhesive structure according to embodiment 1 of the present invention. As shown in Fig. 1, an adhesive structure 100 according to embodiment 1 is composed of a porous thin film 11 and an adhesive 13 impregnated in the porous thin film 11.

[0016] The porous thin film 11 is a thin film with a porous skeleton. It is mainly made of a resin that is cured by heating using an epoxy base resin and an amine-based curing agent. By adding a phase-separable material during curing, a polymerization-induced phase separation mechanism occurs, and areas where cross-linking polymerization occurs and areas where phase separation occurs are randomly formed during curing, making it possible to create a porous thin film with a three-dimensionally continuous network skeleton and pores.

[0017] The epoxy monomers used here include aromatic epoxy resins such as bisphenol A epoxy resins, hydrogenated bisphenol A epoxy resins, brominated bisphenol A epoxy resins, bisphenol F epoxy resins, bisphenol E epoxy resins, bisphenol AD ​​epoxy resins, stilbene epoxy resins, biphenyl epoxy resins, bisphenol A novolac epoxy resins, cresol novolac epoxy resins, and epoxy resins containing heteroaromatic rings; and non-aromatic epoxy resins such as aliphatic glycidyl ether epoxy resins, aliphatic glycidyl ester epoxy resins, alicyclic glycidyl ether epoxy resins, and alicyclic glycidyl ester epoxy resins. While the number of epoxy groups in the monomer is not important for these epoxy monomers, difunctional or tetrafunctional epoxy monomers are preferred. These epoxy monomers may be used alone or in combinations of two or more. Combinations of these monomers can alter properties such as flexibility, pore size, heat resistance, and strength / elongation.

[0018] Curing agents include aromatic amines such as metaphenylenediamine, diaminodiphenylmethane, diaminodiphenylsulfone, benzyldimethylamine, and dimethylaminomethylbenzene; aliphatic amines such as ethylenediamine, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, iminobispropylamine, bis(hexamethylene)triamine, trimethylhexamethylenediamine, and polyetherdiamine; alicyclic amines such as isophoronediamine, 3,9-bis(3-aminopropyl)2,4,8,10-tetraoxaspiro(5,5)undecane adduct, bis(4-amino-3-methylcyclohexyl)methane, and bis(4-aminocyclohexyl)methane; heteroaromatic ring-containing amines; and modified versions thereof. Non-aromatic curing agents, such as aliphatic polyamidoamines composed of polyamines and dimer acids, are also possible. These curing agents may be used alone or in combination of two or more. Here, the ratio of epoxy monomer to curing agent added is preferably in the range of 40 to 300 parts by weight per 100 parts by weight of uncured epoxy.

[0019] Since pores are formed when a thermosetting resin is thermally cured, a phase-separation pore-forming agent that will cause phase separation must be selected. The phase-separation pore-forming agent selected is one that can dissolve the uncured monomer (or polymer) and / or curing agent that make up the epoxy resin. After the monomer (or uncured polymer) and curing agent are polymerized, the uncured monomer (or polymer) and / or curing agent that have phase-separated from the polymer are removed. Examples of phase-separation pore-forming agents include cellosolves such as methyl cellosolve and ethyl cellosolve, esters such as ethylene glycol monomethyl ether acetate and propylene glycol monomethyl ether acetate, glycols such as polyethylene glycol and polypropylene glycol, and ethers such as polyoxyethylene monomethyl ether and polyoxyethylene dimethyl ether. These phase-separation pore-forming agents may be used alone or in combination of two or more. Among these phase-separation pore-forming agents, it is preferable to use diethylene glycol, triethylene glycol, tetraethylene glycol, or polyethylene glycol. The amount of the phase separation pore-forming agent used is preferably 10 to 400 parts by weight per 100 parts by weight of uncured epoxy / curing agent.

[0020] The adhesive 13 used has a bonding strength of 10 MPa or more between SPCC (Steel Plate Cold Commercial) and SPCC when used alone, and exhibits physical properties such as a glass transition temperature of 150° C. or more.

[0021] Examples of adhesive 13 include a mixture of epoxy resins with high glass transition temperatures, such as 4,4'-methylenebis(N,N-diglycidylaniline), N,N,N',N'-tetraglycidyl-4,4'-diamidodiphenylmethane, N,N,N',N'-tetraglycidyl-m-xylenediamine, and 2,2'-diallylbisphenol A diallyl ether, with aromatic amines, such as phenylenediamine, 4,4'-dimethyldiphenylmethane, 3,3'-diaminodiphenylsulfone, diaminocyclohexane, N,N'-diphenyl-1,4-phenylenediamine, and 4,4'-diaminodiphenyl ether. Alternatively, commercially available adhesives, such as Cemedine Y612, PANACOL GTH-T, ThreeBond TB2237J, and ADEKA CLS-1194, which have high heat resistance and a higher elastic modulus than porous thin film 11, can also be used.

[0022] Since the elastic modulus of these adhesives 13 is 2000 to 10,000 MPa, the difference in elastic modulus with the porous thin film 11 is large. Therefore, the ratio of the elastic modulus of the porous thin film 11 to the impregnated adhesive 13 is preferably in the range of 2 to 20. If the ratio is lower than 2, the effect of the thin film layer is weak, and if the ratio is higher than 20, it is impossible for organic materials to exist. Additionally, the impregnated adhesive 13 is rigid, resulting in a small elongation of approximately 1 to 5%. By combining this with the porous thin film 11, the flexibility of the porous thin film 11 is imparted, preventing sudden cracking of the adhesive surface and dispersing stress, thereby increasing resistance to stresses generated by temperature changes. The ratio of the elongation of the adhesive 13 to the porous thin film 11 is preferably in the range of 2 to 1000, more preferably in the range of 2 to 20. The thicker the porous thin film 11, the more difficult it is for the adhesive 13 to penetrate. Therefore, the thickness of the porous thin film 11 should be 1 mm or less, more preferably 0.001 mm or more and 0.5 mm or less. It is not possible to make a film thinner than 0.001 mm, and if it exceeds 0.5 mm, the adhesive layer will be too thick when subsequently bonded, making it impractical.

[0023] Next, a method for producing the porous thin film 11 used in the bonded structure 100 according to the first embodiment of the present invention will be described.

[0024] First, a mixed solution of an epoxy base resin, an amine-based curing agent, and a phase separation pore-forming agent is thoroughly stirred with a mixer. Next, this epoxy solution is thinly applied to a pretreated substrate to obtain the desired thickness, and then thermally cured. Finally, the thermally cured epoxy thin film is peeled off from the substrate to obtain a porous epoxy thin film (11). If necessary, the thin film can be washed with a solvent to obtain a thin film with a cleaner surface.

[0025] Here, the porous thin film 11 produced is characterized by having an elastic modulus in the range of 0.1 to 3000 MPa. Of these, a porous thin film 11 having an elastic modulus in the range of 10 to 1000 MPa is more preferable for improving adhesive reliability. It is known that the porous thin film 11 in this case has a pore diameter of 0.1 to 100 μm; if the pore diameter is smaller than 0.1 μm, the adhesive cannot be sufficiently impregnated. If the pore diameter is larger than 100 μm, a fine flexible structure cannot be obtained, resulting in poor effectiveness. A pore diameter of 0.5 to 10 μm is more preferable.

[0026] Furthermore, the porous thin film 11 thus fabricated has been found to have a glass transition temperature of 60 to 200°C. Porous thin films with a temperature below 60°C tend to exhibit significantly reduced heat resistance, while those above 200°C can be fabricated, but because they are rigid resins, it is impossible to ensure structural flexibility. A glass transition temperature of 100 to 140°C is desirable, as this results in good bonding reliability without cracking or peeling. The porous thin film 11 itself is known to be soft, exhibiting an elongation of approximately 3 to 50%. Here, if the elongation ratio with respect to the cured product is less than 2, sufficient curing is not achieved, and if it exceeds 1000, the heat resistance of the flexible structure is low, resulting in an unsuitability for high-heat-resistant applications.

[0027] The produced porous thin film 11 can be impregnated with the adhesive 13 to obtain an adhesive structure 100 having a porous structure. When the adhesive 13 is impregnated, a temperature lower than the curing temperature of the adhesive 13 is applied and vacuum degassing is repeated, thereby enabling the adhesive 13 to be sufficiently impregnated into the porous thin film 11. The adhesive 13 used has an adhesive strength of 10 MPa or more between SPCC materials after curing of the adherends and a glass transition temperature of 170°C to 300°C, which is higher than the glass transition temperature of the porous thin film.

[0028] Although the initial strength of the adhesive 13 decreases when the porous thin film 11 is impregnated with the adhesive 13, the adhesive structure 100 still has excellent adhesive strength in practical use due to the high adhesive strength of the adhesive 13. On the other hand, the configuration of the adhesive structure 100 makes it possible to exhibit a stress relaxation effect in response to environmental changes, and it is possible to withstand temperature cycle tests with severe temperature differences, for example, from -20 to 130°C. Furthermore, when bonding materials with different thermal expansion coefficients, such as magnet / steel plate, aluminum / iron, invar / iron, and engineering plastics (polyetheretherketone, polyacetal, polycarbonate, polyethersulfone polyphenylene sulfide, polyimide, polyetherimide) / metal, there has been a problem with adhesive peeling due to the difference in the thermal expansion coefficients of the adherends during heat curing. However, the use of the adhesive structure 100 can solve this problem.

[0029] Furthermore, when using the bonded structure 100, surface treatments to improve adhesion can be performed, such as polishing the adherend surface with abrasive paper to improve surface roughness and obtain a new surface, air treatment, argon plasma treatment, deep ultraviolet light treatment, and corona discharge treatment, which are physical treatments that can be expected to improve adhesion and adhesive strength.

[0030] Similar effects can also be achieved by applying a silane coupling agent as a chemical treatment. For example, for epoxy adhesives, primers such as 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-glycidoxypropylmethyldithoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, N-2-(aminoethyl)-3-aminopropylmethyldimethoxysilane, 3-aminopropyltrimethoxysilane, 3-triethoxysilyl-N-(1,3-dimethylbutylidene)propylamine, N-phenyl-3-aminopropyltrimethoxysilane, and N-(benzylbenzyl)-2-aminoethyl-3-aminopropyltrimethoxysilane hydrochloride can be used. This not only alleviates stress during thermal curing, making the adhesive more flexible for use in places with large temperature differences, but also enables its use in areas where commercially available adhesives have not previously been used.

[0031] Fig. 2 is a diagram showing a state where bonding is performed using the bonded structure 100 according to the first embodiment of the present application. As shown in Fig. 2, it is the impregnated adhesive 13 that comes into direct contact with the adherend 12. In addition, the thickness of the adhesive 13 is generally also often designed, and in order to satisfy the clearance with other components and design tolerances, the thickness of the bonded structure 100 is preferably 0.5 mm or less.

[0032] FIG. 3 is a graph showing the rate of change in adhesive strength of the bonded structure 100 according to the first embodiment of the present application. FIG. 3 shows the results of a temperature cycle test in which the bonded structure 100 was bonded to an adherend 12, such as Invar steel, and subjected to 300 cycles at a temperature difference of −15 to 130°C (◯: bonded structure 100, △: commercially available adhesive). These results show that the adhesive strength of the commercially available adhesive decreased after the temperature cycle test, whereas the bonded structure 100 maintained its adhesive strength even after the temperature cycle test. By introducing a more flexible structure into the porous skeleton, the bonded structure 100 achieved effects that could not be achieved with conventional rigid components alone.

[0033] As described above, the bonded structure 100 according to the first embodiment includes a porous thin film 11 made of an epoxy resin with pores formed by a porous skeleton, and the pores of the porous thin film 11 are impregnated with an adhesive 13. The mechanical properties of the porous thin film made of epoxy are flexible, providing a stress relief effect, allowing it to relieve stresses generated by temperature cycles and other conditions, making it suitable for use in devices subject to large temperature changes. This allows stress relief to occur without lowering the adhesive's glass transition temperature or adhesive strength. Furthermore, while a hard adhesive alone often exhibits interfacial failure and cracks during shear testing, the use of an adhesive-impregnated porous thin film results in at least a partial cohesive failure of the adhesive within the porous thin film, dispersing stress.

[0034] Embodiment 2 In the second embodiment, a case where the adhesive structure 100 in the first embodiment is applied to an electronic component will be described.

[0035] Fig. 4 is a cross-sectional view showing the configuration of a semiconductor device using an adhesive structure 100 according to embodiment 2 of the present invention. As shown in Fig. 4, the semiconductor device 200 is composed of a substrate 21, a semiconductor element 23 provided on the surface of the substrate 21 via the adhesive structure 100, bonding wires 24 connecting electrodes (not shown) provided on the surface of the substrate 21 to surface electrodes (not shown) provided on the surface of the semiconductor element 23, and a sealing resin 25 that seals the semiconductor element 23.

[0036] Power devices through which large currents of up to several hundred amperes flow must withstand high temperatures of around 200° C., and unprecedented heat resistance is required. In particular, power semiconductors such as SiC, GaN, and Ga2O3 can operate at temperatures of 300° C. or higher, and in order to utilize this capability, the adhesive structure 100 of the first embodiment can be used as a mounting material for modules that can withstand such high temperatures.

[0037] By using the adhesive structure 100 of the first embodiment in a semiconductor device 200 such as a power device, stresses that occur due to temperature cycles or the like can be alleviated.

[0038] If necessary, a certain thermal conductivity can be imparted by adding an arbitrary amount of powder (flake, spherical, needle-like, and special shapes) of a thermally conductive material such as silica, boron nitride, aluminum oxide, aluminum nitride, magnesium oxide, silicon nitride, beryllium oxide, and diamond to the porous thin film 11. In addition, if conductivity is required, conductive powder (flake, spherical, needle-like, and special shapes) of a thermally conductive material such as copper, silver, carbon black, and graphite may be added.

[0039] In addition, the substrate used as the mounting material may be a printed wiring board laminated with a glass prepreg material using epoxy, a ceramic substrate formed by laminating and sintering ceramic layers, or a lead frame formed by punching out a thin pure copper plate.

[0040] As described above, the semiconductor device 200 using the adhesive structure 100 of this embodiment 2 comprises a semiconductor element 23 provided on the surface of a substrate 21 via the adhesive structure 100 of embodiment 1, bonding wires 24 connecting electrodes provided on the surface of the substrate 21 to electrodes provided on the surface of the semiconductor element 23, and a sealing resin 25 that seals the semiconductor element 23. This not only allows for sufficient relaxation of stresses that occur due to temperature cycles, etc. when bonding the semiconductor element, but also provides excellent adhesion.

[0041] Embodiment 3 In the third embodiment, a case where the adhesive structure 100 in the first embodiment is applied to a motor will be described.

[0042] Fig. 5 is a cross-sectional view showing the configuration of a motor using an adhesive structure 100 according to embodiment 3 of the present application. As shown in Fig. 5, motor 200 is composed of a shaft 34, a cylindrical steel plate 33 attached to shaft 34, and a magnet 32 ​​adhered to the outer periphery of steel plate 33 via adhesive structure 100.

[0043] In an SPM motor (Surface Permanent Magnet Motor), the adhesive structure 100 of embodiment 1 can be used to fix magnets that require high heat resistance, and to fix parts in the engine room.

[0044] By using the bonded structure 100 of the first embodiment in the motor 300 such as an SPM motor, stresses that occur due to temperature cycles and the like can be alleviated.

[0045] The magnets used here can be any type of magnet, including ferrite magnets, neodymium magnets, samarium-cobalt magnets, alnico magnets, and bonded magnets, regardless of their alloy composition. The material bonding the magnets is iron, and the magnets can be in the form of die-cast products or electromagnetic steel sheets made by laminating thin iron plates.

[0046] As described above, the motor 300 using the adhesive structure 100 of this embodiment 3 comprises a cylindrical steel plate 33 attached to a shaft 34 and a magnet 32 ​​attached to the outer periphery of the steel plate 33 via the adhesive structure 100 of embodiment 1. This not only allows for sufficient mitigation of stresses that occur due to temperature cycles, etc. when bonding the magnets, but also provides excellent adhesion.

[0047] Embodiment 4 In the fourth embodiment, a case where the bonded structure 100 in the first embodiment is applied to an aircraft part will be described.

[0048] Fig. 6 is a block diagram showing the configuration of the bonded structure 100 according to embodiment 4 of the present application. Fig. 7 is a diagram showing the system flow of an in-flight air conditioning system using the bonded structure 100 according to embodiment 4 of the present application.

[0049] As shown in FIG. 6, first, the jet engine 41 takes in outside air and produces compressed air using a compressor 42 equipped with sensors and components 44 using the adhesive structure 100, which is then mixed with fuel in the combustion chamber and combusted intermittently (step S701).

[0050] Next, the air coming out of the combustion chamber is cooled to a desired temperature by the heat exchanger 43 using the sensor and the part 45 using the adhesive structure 100 (step S702).

[0051] Next, compressed air is taken from the compressor 42 using the sensors and components 44 using the adhesive structure 100 (step S703) and sent to the aircraft's air conditioning system (step S704).

[0052] Finally, the air is cooled in the air conditioning system (step S705) and then blown into the cabin (step S706).

[0053] The air outside an aircraft is cold, ranging from 0 to 40°C on the ground and from -40 to 60°C at altitudes of 10,000m or higher. Therefore, the sensors and components 44 used in the compressor 42 must be able to withstand temperatures ranging from relatively high temperatures of 100 to 200°C to low temperatures of -40 to 60°C.

[0054] By using the adhesive structure 100 in an interior air conditioning system as described above, the system has heat resistance and high toughness to maintain the structure in areas with large temperature differences.

[0055] As described above, in the on-board air conditioning equipment using the adhesive structure 100 of this embodiment 4, the adhesive structure 100 of embodiment 1 is used to bond the sensors and components 44 used in the compressor 42, so not only can the stress generated by temperature cycles and the like in bonding the sensors and components be sufficiently alleviated, but the adhesive properties are also excellent.

[0056] Although various exemplary embodiments and examples are described in this application, the various features, aspects, and functions described in one or more embodiments are not limited to the application of a particular embodiment, but may be applied to the embodiments alone or in various combinations. Therefore, countless variations not illustrated are contemplated within the scope of the technology disclosed in this specification. For example, this includes cases where at least one component is modified, added, or omitted, or where at least one component is extracted and combined with components of another embodiment. Various aspects of the present disclosure are summarized below as appendices. (Appendix 1) a thin film made of an epoxy resin in which pores are formed by a porous skeleton; An adhesive structure in which the pores of the thin film are impregnated with an adhesive, The thin film is a heat conductive Guidance 1. An adhesive structure comprising a polymeric or conductive material. (Appendix 2) 2. The adhesive structure according to claim 1, wherein the ratio of the modulus of elasticity of the adhesive to that of the thin film is 2 or more and 20 or less. (Appendix 3) The adhesive structure according to claim 1 or 2, wherein the thin film has a glass transition temperature of 60°C or higher and 200°C or lower, and the glass transition temperature of the cured product of the impregnated adhesive is higher than the glass transition temperature of the porous thin film. (Appendix 4) 4. The bonded structure according to any one of claims 1 to 3, wherein the pores have a diameter of 0.1 μm or more and 100 μm or less. (Appendix 5) 5. The bonded structure according to any one of claims 1 to 4, wherein the ratio of the elongation of the thin film to the adhesive is 2 or more and 1000 or less. (Appendix 6) A semiconductor device comprising: a semiconductor element provided on a surface of a substrate via an adhesive structure according to any one of Supplementary Note 1 to Supplementary Note 5; bonding wires connecting electrodes provided on the surface of the substrate to electrodes provided on the surface of the semiconductor element; and an encapsulating resin encapsulating the semiconductor element. (Appendix 7) A semiconductor device comprising: a thin film made of an epoxy resin on the surface of a substrate, with pores formed by a porous skeleton; a semiconductor element provided via an adhesive structure in which the pores of the thin film are impregnated with an adhesive; bonding wires connecting electrodes provided on the surface of the substrate to electrodes provided on the surface of the semiconductor element; and an encapsulating resin that encapsulates the semiconductor element. (Appendix 8) 8. The semiconductor device according to claim 7, wherein the ratio of the elastic modulus of the adhesive to that of the thin film is 2 or more and 20 or less. (Appendix 9) 9. The semiconductor device according to claim 7 or 8, wherein the thin film has a glass transition temperature of 60°C or higher and 200°C or lower, and the glass transition temperature of the cured product of the impregnated adhesive is higher than the glass transition temperature of the porous thin film. (Appendix 10) 10. The semiconductor device according to any one of claims 7 to 9, wherein the pores have a diameter of 0.1 μm or more and 100 μm or less. (Appendix 11) 11. The semiconductor device according to claim 7, wherein the ratio of the elongation rate of the thin film to the adhesive is 2 or more and 1000 or less. (Appendix 12) A motor comprising: a cylindrical steel plate attached to a shaft; and a magnet bonded to the outer periphery of the steel plate via the adhesive structure according to any one of Supplementary Note 1 to Supplementary Note 5. (Appendix 13) A motor comprising: a cylindrical steel plate attached to a shaft; a thin film made of epoxy resin having pores formed by a porous skeleton around the outer periphery of the steel plate; and a magnet adhered via an adhesive structure in which the pores of the thin film are impregnated with an adhesive. (Appendix 14) 14. The motor described in Appendix 13, wherein the ratio of the elastic modulus of the adhesive to that of the thin film is 2 or more and 20 or less. (Appendix 15) The motor according to claim 13 or 14, wherein the thin film has a glass transition temperature of 60°C or higher and 200°C or lower, and the glass transition temperature of the cured product of the impregnated adhesive is higher than the glass transition temperature of the porous thin film. (Appendix 16) 16. The motor according to any one of claims 13 to 15, wherein the pores have a diameter of 0.1 μm or more and 100 μm or less. (Appendix 17) 17. The motor according to any one of claims 13 to 16, wherein the ratio of the elongation rate of the thin film to the adhesive is 2 or more and 1000 or less. (Appendix 18) A flying object equipped with a compressor, characterized in that the adhesive structure according to any one of Supplementary Note 1 to Supplementary Note 5 is used to bond sensors and components used in the compressor. (Appendix 19) A flying object equipped with a compressor, characterized in that an adhesive structure is used to bond sensors and parts used in the compressor, the adhesive structure comprising a thin film made of epoxy resin with pores formed by a porous skeleton, the pores of the thin film being impregnated with an adhesive. (Appendix 20) 20. The flying object of claim 19, wherein the ratio of the elastic modulus of the adhesive to the thin film is 2 or more and 20 or less. (Appendix 21) 21. The flying object according to claim 19 or 20, wherein the thin film has a glass transition temperature of 60°C or higher and 200°C or lower, and the glass transition temperature of the cured product of the impregnated adhesive is higher than the glass transition temperature of the porous thin film. (Appendix 22) 22. The flying object according to any one of claims 19 to 21, wherein the pores have a diameter of 0.1 μm or more and 100 μm or less. (Appendix 23) 23. The flying object according to any one of claims 19 to 22, wherein the ratio of the elongation of the thin film to the adhesive is 2 or more and 1000 or less. [Explanation of symbols]

[0057] 11 Porous thin film, 13 Adhesive, 100 Adhesive structure.

Claims

1. The membrane is made of an epoxy resin and has pores formed by a porous skeleton. An adhesive structure in which the pores of the thin film are impregnated with an adhesive, The adhesive structure is characterized in that the thin film contains a thermally conductive material and / or an electrically conductive material.

2. 2. The adhesive structure according to claim 1, wherein a ratio of an elastic modulus of the adhesive to that of the thin film is 2 or more and 20 or less.

3. 2. The adhesive structure according to claim 1, wherein the thin film has a glass transition temperature of 60° C. or more and 200° C. or less, and the glass transition temperature of the cured product of the impregnated adhesive is higher than the glass transition temperature of the porous thin film.

4. 2. The bonded structure according to claim 1, wherein the pores have a diameter of 0.1 μm or more and 100 μm or less.

5. 2. The adhesive structure according to claim 1, wherein a ratio of an elongation rate of the thin film to that of the adhesive is 2 or more and 1,000 or less.

6. A semiconductor device comprising: a semiconductor element provided on a surface of a substrate via an adhesive structure according to any one of claims 1 to 5; bonding wires connecting electrodes provided on the surface of the substrate to electrodes provided on the surface of the semiconductor element; and a sealing resin for sealing the semiconductor element.

7. A semiconductor device comprising: a thin film made of an epoxy resin on a surface of a substrate, the thin film having pores formed by a porous skeleton; a semiconductor element provided via an adhesive structure impregnated with an adhesive in the pores of the thin film; bonding wires connecting electrodes provided on the surface of the substrate and electrodes provided on the surface of the semiconductor element; and a sealing resin for sealing the semiconductor element.

8. A semiconductor device as described in claim 7, characterized in that the ratio of the elastic modulus of the adhesive to the thin film is 2 or more and 20 or less.

9. The semiconductor device described in Claim 7, characterized in that the thin film has a glass transition temperature of 60°C or higher and 200°C or lower, and the glass transition temperature of the impregnated adhesive hardened product is higher than the glass transition temperature of the porous thin film.

10. The semiconductor device according to claim 7, characterized in that the pores have a diameter of 0.1 μm or more and 100 μm or less.

11. A semiconductor device as described in claim 7, characterized in that the ratio of the elongation rate of the thin film to that of the adhesive is 2 or more and 1,000 or less.

12. A motor comprising: a cylindrical steel plate attached to a shaft; and a magnet bonded to an outer periphery of the steel plate via the adhesive structure according to any one of claims 1 to 5.

13. A motor comprising: a cylindrical steel plate attached to a shaft; a thin film made of an epoxy resin having pores formed by a porous skeleton on the outer periphery of the steel plate; and a magnet attached via an adhesive structure in which the pores of the thin film are impregnated with an adhesive.

14. The motor described in claim 13, characterized in that the ratio of the elastic modulus of the adhesive to the thin film is 2 or more and 20 or less.

15. The motor described in Claim 13, characterized in that the thin film has a glass transition temperature of 60°C or higher and 200°C or lower, and the glass transition temperature of the impregnated adhesive hardened product is higher than the glass transition temperature of the porous thin film.

16. The motor described in claim 13, characterized in that the pores have a diameter of 0.1 μm or more and 100 μm or less.

17. The motor described in claim 13, characterized in that the ratio of the elongation rate of the thin film to that of the adhesive is 2 or more and 1,000 or less.

18. 6. A flying object equipped with a compressor, the flying object being characterized in that the adhesive structure according to claim 1 is used for bonding sensors and parts used in the compressor.

19. A flying object equipped with a compressor, characterized in that an adhesive structure is used for bonding sensors and parts used in the compressor, the adhesive structure comprising a thin film made of epoxy resin having pores formed by a porous skeleton, the pores of the thin film being impregnated with an adhesive.

20. A flying object as described in Claim 19, characterized in that the ratio of the elastic modulus of the adhesive to that of the thin film is 2 or more and 20 or less.

21. A flying object as described in Claim 19, characterized in that the thin film has a glass transition temperature of 60°C or higher and 200°C or lower, and the glass transition temperature of the impregnated adhesive hardened product is higher than the glass transition temperature of the porous thin film.

22. The flying object described in claim 19, characterized in that the pores have a diameter of 0.1 μm or more and 100 μm or less.

23. The flying object described in claim 19, characterized in that the ratio of the elongation rate of the thin film to that of the adhesive is 2 or more and 1,000 or less.