Display device, display module, electronic apparatus

Abstract

Provided is a novel display device that has superior convenience, utility, and reliability. The display device includes a first light-emitting device, a second light-emitting device, and a first insulation layer. The first light-emitting device comprises a first electrode, a second electrode, and a first unit. The first unit is sandwiched between the first electrode and the second electrode, has a first side surface, and includes a light-emitting material. The second light-emitting device comprises a third electrode, a fourth electrode, and a second unit. The third electrode is adjacent to the first electrode with a first gap therebetween. The second unit is sandwiched between the third electrode and the fourth electrode and has a second side surface that is opposite the first side surface. The second unit is at a second gap from the first unit, and the second gap overlaps the first gap. The second unit includes a light-emitting material. The first insulation layer contacts the first side surface and the second side surface, has a thickness that is 0.35–0.5 times the width of the second gap, and includes silicon and nitrogen.

Description

Display devices, display modules, electronic devices

[0001] One embodiment of the present invention relates to a display device, a display module, an electronic device, or a semiconductor device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one embodiment of the present invention disclosed in this specification include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, a driving method thereof, or a manufacturing method thereof.

[0003] In recent years, there has been a demand for higher definition display panels. Devices requiring high-definition display panels include, for example, smartphones, tablet terminals, and notebook computers. Furthermore, stationary display devices such as televisions and monitors are also required to have higher definitions in line with the trend toward higher resolutions. Furthermore, devices requiring the highest definition include, for example, devices for virtual reality (VR) or augmented reality (AR).

[0004] Representative examples of display devices that can be used in the display panel include liquid crystal display devices, organic EL (Electro Luminescence) elements, light-emitting devices equipped with light-emitting elements such as light-emitting diodes (LEDs), and electronic paper that displays using an electrophoresis method or the like.

[0005] For example, the basic structure of an organic EL element is a layer containing a light-emitting organic compound sandwiched between a pair of electrodes. By applying a voltage to this element, light can be emitted from the light-emitting organic compound. A display device using such an organic EL element does not require a backlight, which is necessary in liquid crystal display devices and the like, and therefore can realize a thin, lightweight, high-contrast, and low-power display device. For example, an example of a display device using an organic EL element is described in Patent Document 1.

[0006] Patent Document 2 discloses a display device for VR that uses an organic EL device.

[0007] Patent Document 1: JP 2002-324673 A, International Publication No. 2018 / 087625

[0008] An object of one embodiment of the present invention is to provide a novel display device with excellent convenience, usefulness, or reliability.An object of one embodiment of the present invention is to provide a novel display module with excellent convenience, usefulness, or reliability.An object of one embodiment of the present invention is to provide a novel electronic device with excellent convenience, usefulness, or reliability.An object of one embodiment of the present invention is to provide a novel display device, a novel display module, a novel electronic device, or a novel semiconductor device.

[0009] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract other problems from the description of the specification, drawings, claims, etc.

[0010] (1) One embodiment of the present invention is a display device including a first light-emitting device, a second light-emitting device, and a first insulating layer.

[0011] The first light-emitting device includes a first electrode, a second electrode, and a first unit, the first unit being sandwiched between the first electrode and the second electrode, the first unit having a first side, and the first unit including a light-emitting material.

[0012] The second light-emitting device includes a third electrode, a fourth electrode, and a second unit. The third electrode is adjacent to the first electrode, and a first gap is formed between the first electrode and the third electrode. The second unit is sandwiched between the third electrode and the fourth electrode, and the second unit has a second side surface facing the first side surface. A second gap is formed between the second unit and the first unit, and the second gap overlaps with the first gap. The second unit includes a light-emitting material.

[0013] The first insulating layer contacts the first side surface and the second side surface, and has a thickness of 0.35 to 0.5 times the width of the second gap. The first insulating layer contains silicon and nitrogen.

[0014] (2) Another embodiment of the present invention is the display device described above, further including a first insulating layer between the first light-emitting device and the second light-emitting device, the first insulating layer containing silicon and nitrogen.

[0015] (3) Another embodiment of the present invention is the display device described above, in which the first insulating layer is a stack of a layer containing silicon and nitrogen and a layer containing silicon and oxygen.

[0016] (4) Another embodiment of the present invention is the display device described above, wherein the second gap is greater than or equal to 20 nm and less than or equal to 100 nm.

[0017] This allows the gap between the first light-emitting device and the second light-emitting device to be narrowed. Furthermore, the aperture ratio of the display device can be increased. Furthermore, the second gap between the first unit and the second unit can be narrowed. Furthermore, a portion of the second gap can be filled using a first insulating layer. The first insulating layer can be formed using an ALD method. The ALD method has high coverage, so the second gap can be suitably filled. Atomic layer deposition (ALD) methods are broadly divided into thermal ALD and plasma-enhanced atomic layer deposition (PEALD). In one aspect of the present invention, it is preferable to form the first insulating layer using the PEALD method. The PEALD method can be performed at a lower temperature than the thermal ALD method. However, one embodiment of the present invention is not limited thereto. The first insulating layer may be formed by a thermal ALD method or a CVD method. Furthermore, it is possible to suppress the occurrence of a phenomenon in which the characteristics of the first light-emitting device and the second light-emitting device are impaired during the manufacturing process. As a result, a novel display device with excellent convenience, usefulness, and reliability can be provided.

[0018] (5) Another embodiment of the present invention is the above display device including a conductive layer.

[0019] The first insulating layer includes a first opening and a second opening, the first opening overlapping the first electrode and the second opening overlapping the third electrode.

[0020] The conductive layer covers the first opening and the second opening, overlaps the second gap, and electrically connects the second electrode and the fourth electrode.

[0021] This allows the second electrode and the fourth electrode to be formed using one conductive layer. Furthermore, since the first insulating layer is formed in the narrow second gap, the second electrode and the fourth electrode can be electrically connected using one conductive layer. Furthermore, the first opening and the second opening can be formed, for example, by dry etching. As a result, a novel display device with excellent convenience, usefulness, and reliability can be provided.

[0022] (6) Another embodiment of the present invention is the display device described above, in which the first electrode has an outer shape smaller than that of the first unit, and the third electrode has an outer shape smaller than that of the second unit.

[0023] The first electrode has a third side surface, the third electrode has a fourth side surface, and the first insulating layer contacts the first side surface, the second side surface, the third side surface, and the fourth side surface.

[0024] This allows the first gap to be formed using a mask for forming the second gap. Furthermore, the outer shape of the first electrode and the outer shape of the first unit can be roughly matched. Furthermore, the outer shape of the third electrode and the outer shape of the second unit can be roughly matched. Furthermore, the aperture ratio of the display device can be increased. Furthermore, the first gap can be formed consecutively to the process of forming the second gap. Furthermore, the second gap can be formed using a dry etching method, and the first gap can be formed using a wet etching method. As a result, a novel display device with excellent convenience, usefulness, and reliability can be provided.

[0025] (7) Another embodiment of the present invention is the above display device including a display region, a sealing region, a second insulating layer, and a third insulating layer.

[0026] The display area includes a first light-emitting device and a second light-emitting device, and the sealing area surrounds the display area.

[0027] The second insulating layer overlaps the third insulating layer in the display region, sandwiching the first light-emitting device and the second light-emitting device between the second insulating layer and the third insulating layer in the display region. The second insulating layer contacts the third insulating layer in the sealing region. The second insulating layer contains silicon and nitrogen, and the third insulating layer contains silicon and either nitrogen or oxygen.

[0028] (8) Another embodiment of the present invention is the display device described above, in which the second insulating layer is a stack of a layer containing silicon and nitrogen and a layer containing silicon and oxygen.

[0029] As a result, the first light-emitting device is sandwiched between the third insulating layer and the second insulating layer. The second light-emitting device is sandwiched between the third insulating layer and the second insulating layer. This method also prevents impurities that impair the operating characteristics of the first light-emitting device from diffusing from the outside to the inside of the display device. The second insulating layer can be formed at a lower temperature than with thermal ALD. This method also prevents the characteristics of the first light-emitting device and the second light-emitting device from being impaired during the manufacturing process. This method also provides flexibility to the display device. As a result, a novel display device with excellent convenience, usefulness, and reliability can be provided.

[0030] (9) Another aspect of the present invention is a display module including the display device described above and at least one of a connector and an integrated circuit.

[0031] (10) Another embodiment of the present invention is an electronic device including the above-described display device and at least one of a battery, a camera, a speaker, and a microphone.

[0032] In the drawings accompanying this specification, components are classified by function and shown as block diagrams that are independent of each other, but in reality, it is difficult to completely separate components by function, and one component may be involved in multiple functions.

[0033] In this specification, the term "light-emitting device" includes an image display device using a light-emitting device. The term "light-emitting device" may also include a module in which a connector, such as an anisotropic conductive film or a TCP (Tape Carrier Package), is attached to a light-emitting device, a module in which a printed wiring board is provided at the end of a TCP, or a module in which an IC (integrated circuit) is directly mounted on a light-emitting device using a COG (Chip On Glass) method. Furthermore, lighting fixtures and the like may have a light-emitting device.

[0034] According to one embodiment of the present invention, a novel display device with excellent convenience, usefulness, or reliability can be provided. Another embodiment of the present invention can provide a novel display module with excellent convenience, usefulness, or reliability. Another embodiment of the present invention can provide a novel electronic device with excellent convenience, usefulness, or reliability. Another embodiment of the present invention can provide a novel display device. Another embodiment of the present invention can provide a novel display module. Another embodiment of the present invention can provide a novel electronic device.

[0035] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these will become apparent from the description in the specification, drawings, claims, etc., and it is possible to extract other effects from the description in the specification, drawings, claims, etc.

[0036] FIGS. 1A to 1D are diagrams illustrating a structure of a display device according to an embodiment. FIGS. 2A and 2B are diagrams illustrating a structure of a display device according to an embodiment. FIGS. 3A and 3B are diagrams illustrating a structure of a display device according to an embodiment. FIG. 4 is a diagram illustrating a structure of a display device according to an embodiment. FIGS. 5A and 5B are diagrams illustrating a structure of a display device according to an embodiment. FIGS. 6A to 6C are diagrams illustrating a structure of a display device according to an embodiment. FIG. 7 is a diagram illustrating a structure of a pixel circuit according to an embodiment. FIG. 8 is a diagram illustrating a structure of a light-emitting device according to an embodiment. FIGS. 9A and 9B are diagrams illustrating a structure of a light-emitting device according to an embodiment. FIG. 10 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 11 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 12 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 13 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 14 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 15 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 16 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 17 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 18 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 19 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 20 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 21 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 22 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 23 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 24 is a diagram illustrating a structure of a display module according to an embodiment. FIGS. 25A and 25B are diagrams illustrating a structure of a display device according to an embodiment. FIG. 26 is a diagram illustrating a structure of a display device according to an embodiment. FIG. 27 is a diagram illustrating a structure of a display device according to an embodiment. FIG. 28 is a diagram illustrating a structure of a display device according to an embodiment. FIG. 29 is a diagram illustrating a structure of a display device according to an embodiment.FIG. 30 is a diagram illustrating a configuration of a display device according to an embodiment. FIG. 31 is a diagram illustrating a configuration of a display module according to an embodiment. FIGS. 32A to 32C are diagrams illustrating a configuration of a display device according to an embodiment. FIG. 33 is a diagram illustrating a configuration of a display device according to an embodiment. FIG. 34 is a diagram illustrating a configuration of a display device according to an embodiment. FIG. 35 is a diagram illustrating a configuration of a display device according to an embodiment. FIG. 36 is a diagram illustrating a configuration of a display device according to an embodiment. FIG. 37 is a diagram illustrating a configuration of a display device according to an embodiment. FIGS. 38A to 38D are diagrams illustrating an example of an electronic device according to an embodiment. FIGS. 39A to 39F are diagrams illustrating an example of an electronic device according to an embodiment. FIGS. 40A to 40G are diagrams illustrating an example of an electronic device according to an embodiment. FIGS. 41A and 41B are diagrams illustrating a configuration of an in-vehicle system according to an embodiment. FIG. 42 is a schematic diagram illustrating a configuration of a film formation system that can be used to manufacture a functional panel according to an embodiment. FIG. 43 is a schematic diagram illustrating a configuration of a film formation system that can be used to manufacture a functional panel according to an embodiment. 44A and 44B are schematic diagrams illustrating the configuration of a film formation apparatus that can be used to manufacture a functional panel according to an embodiment.

[0037] A display device according to one embodiment of the present invention includes a first light-emitting device, a second light-emitting device, and a first insulating layer. The first light-emitting device includes a first electrode, a second electrode, and a first unit. The first unit is sandwiched between the first electrode and the second electrode, and the first unit has a first side surface, and the first unit includes a light-emitting material. The second light-emitting device includes a third electrode, a fourth electrode, and a second unit. The third electrode is adjacent to the first electrode, and a first gap is formed between the third electrode and the first electrode. The second unit is sandwiched between the third electrode and the fourth electrode, and the second unit has a second side surface, the second side surface facing the first side surface, and a second gap is formed between the second unit and the first unit, and the second gap overlaps the first gap. The second unit includes a light-emitting material. The first insulating layer contacts the first side and the second side, the first insulating layer has a thickness that is 0.35 times or more and 0.5 times or less the width of the second gap, and the first insulating layer contains silicon and nitrogen.

[0038] This allows the gap between the first light-emitting device and the second light-emitting device to be narrowed. Furthermore, the aperture ratio of the display device can be increased. Furthermore, the second gap between the first unit and the second unit can be narrowed. Furthermore, the first insulating layer can be used to fill a portion of the second gap. Furthermore, the first insulating layer can be formed at a lower temperature than in the thermal ALD method. Furthermore, the occurrence of a phenomenon in which the characteristics of the first light-emitting device and the second light-emitting device are impaired during the manufacturing process can be suppressed. As a result, a novel display device with excellent convenience, usefulness, and reliability can be provided.

[0039] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes in form and details can be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below. In the configuration of the invention described below, the same parts or parts having similar functions will be denoted by the same reference numerals in different drawings, and repeated explanations will be omitted.

[0040] Embodiment 1 In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS. 1A to 1D, 2A and 2B, and 3A and 3B.

[0041] Fig. 1A is a perspective view illustrating a configuration of a display device according to one embodiment of the present invention, Fig. 1B is a front view illustrating a part of Fig. 1A, Fig. 1C is a cross-sectional view taken along line P-Q illustrated in Fig. 1B, and Fig. 1D is a cross-sectional view illustrating a configuration different from that in Fig. 1C.

[0042] FIG. 2A is a cross-sectional view illustrating a structure of a display device according to one embodiment of the present invention, and FIG. 2B is a cross-sectional view illustrating a part of FIG. 2A.

[0043] 3A is a cross-sectional view illustrating a portion of FIG. 2A, and FIG. 3B is a cross-sectional view illustrating a portion of FIG. 3A.

[0044] <Configuration Example 1 of Display Device> A display device 700 described in this embodiment includes a set of pixels 703 (see FIG. 1A ). The display device 700 also includes a substrate 510 and a functional layer 520.

[0045] The set of pixels 703 comprises pixel 702A, pixel 702B and pixel 702C (see FIG. 1B).

[0046] Pixel 702A includes a light emitting device 550A and a pixel circuit 530A, with light emitting device 550A electrically connected to pixel circuit 530A (see FIGS. 1C and 1D).

[0047] Pixel 702B includes a light-emitting device 550B and a pixel circuit 530B, where light-emitting device 550B is electrically connected to pixel circuit 530B.

[0048] Pixel 702C includes a light emitting device 550C and a pixel circuit 530C, where light emitting device 550C is electrically connected to pixel circuit 530C.

[0049] The functional layer 520 includes a pixel circuit 530A, a pixel circuit 530B, and a pixel circuit 530C. The pixel circuit 530A is sandwiched between the light-emitting device 550A and the substrate 510, the pixel circuit 530B is sandwiched between the light-emitting device 550B and the substrate 510, and the pixel circuit 530C is sandwiched between the light-emitting device 550C and the substrate 510.

[0050] The light-emitting device 550A of the display device 700 of one embodiment of the present invention emits light ELA in a direction where the pixel circuit 530A is not arranged, the light-emitting device 550B emits light ELB in a direction where the pixel circuit 530B is not arranged, and the light-emitting device 550C emits light ELC in a direction where the pixel circuit 530C is not arranged (see FIG. 1C ). In other words, the display device 700 of one embodiment of the present invention is a top-emission display device.

[0051] Furthermore, the light-emitting device 550A of the display device 700 of one embodiment of the present invention emits light ELA in the direction in which the pixel circuit 530A is disposed, the light-emitting device 550B emits light ELB in the direction in which the pixel circuit 530B is disposed, and the light-emitting device 550C emits light ELC in the direction in which the pixel circuit 530C is disposed (see FIG. 1D ). In other words, the display device 700 of one embodiment of the present invention is a bottom-emission display device.

[0052] <Configuration Example 2 of Display Device> A display device 700 described in this embodiment includes a light-emitting device 550A, a light-emitting device 550B, and an insulating layer 529 (see FIG. 2A). The display device 700 also includes a light-emitting device 550C.

[0053] <<Configuration Example of Light-Emitting Device 550A>> The light-emitting device 550A includes an electrode 551A, an electrode 552A, and a unit 103A. The light-emitting device 550A also includes a layer 104A.

[0054] The unit 103A is sandwiched between the electrode 551A and the electrode 552A, and the unit 103A has a side surface 103AS (see FIG. 3A ). The unit 103A also includes a light-emitting material EMA. For example, a fluorescent material, a phosphorescent material, or a material exhibiting thermally activated delayed fluorescence can be used as the light-emitting material EMA. Details of a structure that can be used for the unit 103A will be described in Embodiment 4.

[0055] The layer 104A is sandwiched between the unit 103A and the electrode 551A, and the layer 104A has a thickness of 1×10 ４ Ω・cm or more 1×10 ７ The layer 104A has an electric resistivity of Ω cm or less. For example, a substance having an electron-accepting property or a composite material containing a substance having an electron-accepting property and a material having a hole-transporting property can be used for the layer 104A. Note that the details of a structure that can be used for the electrode 551A and the layer 104A will be described in Embodiment 5.

[0056] <<Configuration Example of Light-Emitting Device 550B>> The light-emitting device 550B includes an electrode 551B, an electrode 552B, and a unit 103B (see FIG. 2A). The light-emitting device 550B also includes a layer 104B.

[0057] The electrode 551B is adjacent to the electrode 551A, and the electrode 551B has a gap 551AB between it and the electrode 551A. In other words, the gap 551AB is sandwiched between the electrode 551A and the electrode 551B.

[0058] Unit 103B is sandwiched between electrode 551B and electrode 552B, and has a side surface 103BS (see FIG. 3A ). Side surface 103BS faces side surface 103AS, and unit 103B has a gap 103AB between it and unit 103A. Gap 103AB overlaps with gap 551AB. In other words, gap 103AB is sandwiched between unit 103A and unit 103B.

[0059] Furthermore, the unit 103B includes a light-emitting material EMB. For example, a material that can be used for the light-emitting material EMA can be used for the light-emitting material EMB.

[0060] For example, the gap 103AB is not less than 20 nm and not more than 100 nm.

[0061] Layer 104B is sandwiched between unit 103B and electrode 551B, and layer 104B has a gap between it and layer 104A. The gap also overlaps gap 551AB.

[0062] <Configuration Example 1 of Insulating Layer 529> Insulating layer 529 contacts side surface 103AS and side surface 103BS. Insulating layer 529 has a thickness that is 0.35 to 0.5 times the thickness of gap 103AB. Note that distance t0 corresponding to the width of gap 103AB and thickness t1 of insulating layer 529 are shown in FIG. 3B .

[0063] The insulating layer 529 contains silicon and nitrogen. For example, the insulating layer 529 can be formed using a plasma-enhanced atomic layer deposition (PEALD) method. Specifically, a film containing silicon and nitrogen can be used for the insulating layer 529. A film containing silicon, nitrogen, and oxygen can be used for the insulating layer 529. A stacked film including a film containing silicon and nitrogen and a film containing silicon, nitrogen, and oxygen can be used for the insulating layer 529. Stacking films with different compositions can prevent pinholes from occurring. A film having a thickness of 5 nm to 50 nm, preferably a film having a thickness of 5 nm to 30 nm, and more preferably a film having a thickness of 5 nm to 20 nm, can be suitably used for the insulating layer 529. By reducing the film thickness, the time required for film formation can be shortened. By increasing the film thickness, the gap 103AB can be filled. In other words, the insulating layer 529 can fill part or all of the gap 103AB. By using the ALD method, the insulating layer 529 is formed isotropically with respect to the underlying surface. Therefore, for example, in FIG. 3A , the thickness of the insulating layer 529 formed on the upper surface of the layer SCRA1 is approximately equal to the thickness of the insulating layer 529 formed on the side surface of the layer SCRA1. Furthermore, by narrowing the width of the gap 103AB sufficiently and increasing the thickness of the insulating layer 529 sufficiently, the gap 103AB can be filled with the insulating layer 529. After the insulating layer 529 fills the gap 103AB, further film formation can be continued. This allows the thickness of the insulating layer 529 to continue to increase on the upper surface of the layer SCRA1.

[0064] This allows the gap between the light-emitting device 550A and the light-emitting device 550B to be narrowed. Furthermore, the aperture ratio of the display device can be increased. Furthermore, the gap 103AB between the unit 103A and the unit 103B can be narrowed. Furthermore, the insulating layer 529 can be used to fill a portion of the gap 103AB. The first insulating layer can be formed by an ALD method. Since the ALD method has high coverage, it can suitably fill the second gap. Note that the ALD method is broadly divided into two methods: a thermal ALD method and a PEALD method. In one embodiment of the present invention, the first insulating layer is preferably formed by the PEALD method. The PEALD method can be performed at a lower temperature than the thermal ALD method. However, one embodiment of the present invention is not limited thereto. The first insulating layer may be formed by a thermal ALD method or a CVD method. Furthermore, it is possible to prevent the characteristics of the light-emitting device 550A and the light-emitting device 550B from being impaired during the manufacturing process, thereby providing a novel display device that is highly convenient, useful, and reliable.

[0065] A silicon nitride layer, a silicon nitride oxide layer, a silicon oxynitride layer, or a silicon oxide layer formed by the PEALD method can be used for the insulating layer 529. The silicon nitride layer contains silicon (Si) and nitrogen (N) as main components. The silicon nitride oxide layer contains silicon (Si), nitrogen (N), and oxygen (O). The silicon oxynitride layer contains silicon (Si), oxygen (O), and nitrogen (N). The silicon oxide layer contains silicon (Si) and oxygen (O), but also contains trace amounts of carbon (C) and hydrogen (H). The proportion of the main component is 70% or more. Other components include carbon (C) and hydrogen (H).

[0066] <<Configuration Example of Light-Emitting Device 550C>> The light-emitting device 550C includes an electrode 551C, an electrode 552C, a unit 103C, and a layer 104C. The electrode 551C is adjacent to the electrode 551B.

[0067] The unit 103C is sandwiched between the electrode 551C and the electrode 552C, and the unit 103C includes the luminescent material EMC.

[0068] Layer 104C is sandwiched between unit 103C and electrode 551C.

[0069] <Structure Example 3 of Display Device> A display device 700 described in this embodiment includes a conductive layer 552 (see FIG. 2A). The display device 700 also includes a layer 105, a layer SCRA1, and a layer SCRC2.

[0070] <<Structure Example 2 of Insulating Layer 529>> The insulating layer 529 includes an opening 529A and an opening 529B. The opening 529A overlaps with the electrode 551A, and the opening 529B overlaps with the electrode 551B (see FIG. 2B).

[0071] <<Configuration Example of Conductive Layer 552>> The conductive layer 552 covers the openings 529A and 529B (see FIG. 2A). The conductive layer 552 also overlaps the gap 103AB, and electrically connects the electrode 552A and the electrode 552B.

[0072] For example, a conductive material can be used for the conductive layer 552. Specifically, a single layer or a stacked layer of a material containing a metal, an alloy, or a conductive compound can be used for the conductive layer 552. Details of a structure that can be used for the conductive layer 552 will be described in Embodiment 6.

[0073] As a result, the electrode 552A and the electrode 552B can be formed using one conductive layer. Furthermore, since the insulating layer 529 is formed in the narrow gap 103AB, the electrode 552A and the electrode 552B can be electrically connected using one conductive layer. Furthermore, the openings 529A and the openings 529B can be formed using, for example, a dry etching method. As a result, a novel display device that is excellent in convenience, usefulness, and reliability can be provided.

[0074] <<Structural Example of Layer 105>> The layer 105 includes a layer 105A and a layer 105B. The layer 105 also includes a layer 105C. A material that facilitates injection of carriers from the electrode 552A, the electrode 552B, and the electrode 552C can be used for the layer 105. For example, a material having an electron injecting property can be used for the layer 105. Details of a structure that can be used for the layer 105 will be described in Embodiment 6.

[0075] <<Configuration Example of Layer SCRA1 and Layer SCRA2>> For example, a film containing a metal, a metal oxide, an organic material, or an inorganic insulating material can be used for the layer SCRA1 and the layer SCRA2.

[0076] The layers SCRA1 and SCRA2 have a function of protecting the layer 104A and the unit 103A during the manufacturing process, specifically, during the process of processing the layer 104A and the unit 103A into a predetermined shape by etching.

[0077] For example, a film containing silicon and nitrogen formed by the PEALD method can be used for the layer SCRA1. Also, tungsten can be used for the layer SCRA1. Also, aluminum oxide formed by the ALD method can be used for the layer SCRA1.

[0078] Also, for example, a film containing aluminum oxide formed by using an ALD method can be used for the layer SCRA2. Also, for example, Alq3 can be used for the layer SCRA2.

[0079] In this specification, etc., a device fabricated using a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. Also, in this specification, etc., a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure.

[0080] <<Configuration Examples of Layers SCRB1 and SCRB2>> For example, films containing metals, metal oxides, organic materials, or inorganic insulating materials can be used for the layers SCRB1 and SCRB2.

[0081] The layers SCRB1 and SCRB2 have the function of protecting the layer 104B and the unit 103B during the manufacturing process.

[0082] <<Configuration Examples of Layers SCRC1 and SCRC2>> For example, films containing metal, metal oxide, organic material, or inorganic insulating material can be used for the layers SCRC1 and SCRC2.

[0083] The layers SCRC1 and SCRC2 have the function of protecting the layer 104C and the unit 103C during the manufacturing process.

[0084] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0085] Embodiment 2 In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS. 4, 5A, and 5B.

[0086] FIG. 4 is a cross-sectional view illustrating a structure of a display device according to one embodiment of the present invention.

[0087] 5A is a cross-sectional view illustrating a portion of FIG. 4, and FIG. 5B is a front view illustrating a portion of FIG. 2A.

[0088] <Configuration Example 1 of Display Device> A display device 700 described in this embodiment has a light-emitting device 550A, a light-emitting device 550B, and an insulating layer 529 (see FIG. 4). Note that the display device 700 described in this example differs from the display device described in Embodiment 1 in the configuration of the light-emitting device. Here, the differences will be described in detail, and the above description will be used for the parts that use similar methods.

[0089] <Configuration Example of Light-Emitting Device 550A> The light-emitting device 550A includes an electrode 551A, an electrode 552A, a unit 103A, a unit 103A2, and an intermediate layer 106A.

[0090] The unit 103A is sandwiched between the electrode 551A and the electrode 552A, and the unit 103A includes the luminescent material EMA.

[0091] The unit 103A2 is sandwiched between the electrode 552A and the unit 103A, and the unit 103A2 includes a light-emitting material EMA2.

[0092] Intermediate layer 106A is sandwiched between unit 103A2 and unit 103A. Intermediate layer 106A includes layers 106A1 and 106A2, with layer 106A1 being sandwiched between unit 103A2 and layer 106A2 (see FIG. 5A ). Intermediate layer 106A also includes layer 106A3, with layer 106A3 being sandwiched between layer 106A1 and layer 106A2. Details of the configuration that can be used for intermediate layer 106A will be described in embodiment 7.

[0093] The layer 106A1 was measured to have a thickness of 1×10 １８ spins / cm ３ It is composed of materials in which a spin density of 1000 or more is observed.

[0094] The layer 106A2 was measured to have a thickness of 1×10 １７ spins / cm ３ Spin densities of less than or equal to 1×10 １６ spins / cm ３ It consists of materials in which a spin density of less than 1000 keV is observed.

[0095] <Configuration Example of Light-Emitting Device 550B> The light-emitting device 550B includes an electrode 551B, an electrode 552B, a unit 103B, a unit 103B2, and an intermediate layer 106B.

[0096] The electrode 551B is adjacent to the electrode 551A, and there is a gap 551AB between the electrode 551B and the electrode 551A.

[0097] The unit 103B is sandwiched between the electrode 551B and the electrode 552B, and the unit 103B includes the luminescent material EMB.

[0098] The unit 103B2 is sandwiched between the electrode 552B and the unit 103B, and the unit 103B2 includes the luminescent material EMB2.

[0099] Intermediate layer 106B is sandwiched between unit 103B2 and unit 103B. A gap is provided between intermediate layer 106B and intermediate layer 106A, and this gap overlaps with gap 551AB. Note that the same configuration as that for intermediate layer 106A can also be used for intermediate layer 106B.

[0100] The intermediate layer 106B also includes a layer 106B1 and a layer 106B2, with the layer 106B1 being sandwiched between the unit 103B2 and the layer 106B2 (see FIG. 5A ). The same configurations that can be used for the layer 106A1 can also be used for the layer 106B1, and the same configurations that can be used for the layer 106A2 can also be used for the layer 106B2. The intermediate layer 106B also includes a layer 106B3, with the layer 106B3 being sandwiched between the layers 106B1 and 106B2. The same configurations that can be used for the layer 106A3 can also be used for the layer 106B3.

[0101] <<Configuration Example of Light-Emitting Device 550C>> The light-emitting device 550C includes an electrode 551C, an electrode 552C, a unit 103C, a unit 103C2, and an intermediate layer. The electrode 551C is adjacent to the electrode 551B.

[0102] The unit 103C is sandwiched between the electrode 551C and the electrode 552C, and the unit 103C includes the luminescent material EMC.

[0103] The unit 103C2 is sandwiched between the electrode 552C and the unit 103C, and the unit 103C2 includes a light-emitting material EMC2.

[0104] The intermediate layer is sandwiched between unit 103C2 and unit 103C. The intermediate layer includes layers 106C1 and 106C2, with layer 106C1 being sandwiched between unit 103C2 and layer 106C2 (see FIG. 4). The intermediate layer also includes layer 106C3, with layer 106C3 being sandwiched between layer 106C1 and layer 106C2.

[0105] <<Configuration Example of Electrode 551A and Electrode 551B>> The electrode 551A has an outer shape smaller than the outer shape of the unit 103A, and the electrode 551A has a side surface 551AS (see FIG. 5A). Note that the outer shape of the electrode 551A is shown using a dashed line in FIG. 5B, and the outer shape of the unit 103A is shown using a solid line in FIG. 5B. For example, the unit 103A and the layer 104A are formed using an anisotropic etching method, and then the electrode 551A is formed using an isotropic etching method. Specifically, the unit 103A and the layer 104A are formed using a dry etching method, and then the electrode 551A is formed using a wet etching method. This allows the outer shape of the electrode 551A to be smaller than the outer shape of the unit 103A.

[0106] The electrode 551B has an outer shape smaller than the outer shape of the unit 103B, and the electrode 551B has a side surface 551BS.

[0107] <<Configuration Example of Insulating Layer 529>> The insulating layer 529 is in contact with the side surface 103AS, the side surface 103BS, the side surface 551AS, and the side surface 551BS (see FIG. 5A ). For example, a film containing silicon and nitrogen and having a thickness of 5 nm to 50 nm, preferably 5 nm to 30 nm, more preferably 5 nm to 20 nm, can be used for the insulating layer 529. Specifically, the insulating layer 529 can be formed by a PEALD method.

[0108] As a result, gap 551AB can be formed using a mask for forming gap 103AB. Furthermore, the outer shape of electrode 551A can be made to roughly coincide with the outer shape of unit 103A. Furthermore, the outer shape of electrode 551B can be made to roughly coincide with the outer shape of unit 103B. Furthermore, the aperture ratio of the display device can be increased. Furthermore, gap 551AB can be formed consecutively to the process of forming gap 103AB. Furthermore, gap 103AB can be formed using a dry etching method, and gap 551AB can be formed using a wet etching method. As a result, a novel display device excellent in convenience, usefulness, and reliability can be provided.

[0109] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0110] Embodiment 3 In this embodiment, a display device according to one embodiment of the present invention will be described with reference to FIGS. 6A, 6B, and 7. FIG.

[0111] 6A is a front view of a display device of one embodiment of the present invention, and FIG. 6B is a front view illustrating a part of FIG. 6A. Also, FIG. 6C is a cross-sectional view taken along the cutting lines X1-X2, X3-X4, a set of pixels 703(i, j), and X5-X6 shown in FIG. 6A.

[0112] FIG. 7 is a circuit diagram illustrating a structure of a display device according to one embodiment of the present invention.

[0113] In this specification, variables that take on integer values ​​of 1 or greater may be used as symbols. For example, (p) including a variable p that takes on an integer value of 1 or greater may be used as part of a symbol specifying any one of up to p components. Also, for example, (m, n) including variables m and n that take on integer values ​​of 1 or greater may be used as part of a symbol specifying any one of up to m×n components.

[0114] <Structure Example 1 of Display Device 700> A display device 700 of one embodiment of the present invention includes a display region 731, a sealing region 732, an insulating layer 573, and an insulating layer 521 (see FIGS. 6A and 6C). The display device 700 also includes an insulating layer 529_2.

[0115] <<Configuration Example of Display Area 731>> Display area 731 includes a set of pixels 703(i,j). The set of pixels 703(i,j) includes pixel 702A(i,j), pixel 702B(i,j), and pixel 702C(i,j) (see FIGS. 6B and 6C ). In other words, display area 731 includes light-emitting device 550A and light-emitting device 550B.

[0116] The pixel 702A(i,j) includes a pixel circuit 530A(i,j) and a light-emitting device 550A. The light-emitting device 550A is electrically connected to the pixel circuit 530A(i,j).

[0117] Pixel 702B(i,j) also includes pixel circuit 530B(i,j) and light-emitting device 550B. Light-emitting device 550B is electrically connected to pixel circuit 530B(i,j). Similarly, pixel 702C(i,j) also includes light-emitting device 550C.

[0118] <<Configuration Example of Sealing Region 732>> The sealing region 732 surrounds the display region 731 (see FIGS. 6A and 6C).

[0119] <<Structure Example of Insulating Layer 521>> The insulating layer 521 overlaps with the display region 731 and the sealing region 732 (see FIG. 6C). For example, the insulating layer 521 can be a film containing silicon and nitrogen or oxygen.

[0120] <<Configuration Example of Insulating Layer 573>> The insulating layer 573 overlaps with the insulating layer 521 in the display region 731, and sandwiches the light-emitting device 550A and the light-emitting device 550B between the insulating layer 573 and the insulating layer 521 in the display region 731 (see FIG. 6C).

[0121] The insulating layer 573 is in contact with the insulating layer 521 in the sealing region 732. The insulating layer 573 contains silicon and nitrogen.

[0122] When a film containing silicon and nitrogen is used for the insulating layer 573, the insulating layer 573 has a thickness of 5 nm to 50 nm, preferably 5 nm to 30 nm, more preferably 5 nm to 20 nm. For example, the insulating layer 573 can be formed by a PEALD method.

[0123] As a result, the light-emitting device 550A is sandwiched between the insulating layer 521 and the insulating layer 573. The light-emitting device 550B is sandwiched between the insulating layer 521 and the insulating layer 573. This also makes it possible to prevent impurities that impair the operating characteristics of the light-emitting device 550A from diffusing from the outside to the inside of the display device. The insulating layer 573 can be formed at a lower temperature than with thermal ALD. This also makes it possible to prevent the characteristics of the light-emitting device 550A and the light-emitting device 550B from being impaired during the manufacturing process. This also makes it possible to provide flexibility to the display device. As a result, a novel display device with excellent convenience, usefulness, and reliability can be provided.

[0124] <<Structure Example of Insulating Layer 529_2>> The insulating layer 529_2 is sandwiched between the insulating layer 529 and the conductive layer 552 (see FIG. 6C). The insulating layer 529_2 is located between the display region 731 and the conductive film VCOM2.

[0125] For example, the insulating layer 529_2 can be formed using a photosensitive resin. Specifically, an acrylic resin or the like can be used.

[0126] As a result, the insulating layer 529_2 can be used to make the step formed on the periphery of the display region 731 into a gently curved surface. Furthermore, the phenomenon in which a gap or a crack is generated in the conductive layer 552 due to the step can be suppressed. Furthermore, the conductive layer 552 and the conductive film VCOM2 can be electrically connected. As a result, a novel display device with excellent convenience, usefulness, and reliability can be provided.

[0127] <Structure Example 2 of Display Device 700> A display device 700 of one embodiment of the present invention includes a functional layer 540 and a functional layer 520 (see FIG. 6C).

[0128] The functional layer 540 includes a light-emitting device 550A.

[0129] The functional layer 520 includes pixel circuits 530A(i,j) and wiring (see FIG. 6C ). The pixel circuits 530A(i,j) are electrically connected to the wiring. For example, a conductive film provided in an opening 591A of the functional layer 520 can be used for the wiring, and the wiring electrically connects the terminal 519B and the pixel circuit 530A(i,j). Note that a conductive material CP electrically connects the terminal 519B and the flexible printed circuit FPC1. Furthermore, for example, the conductive film provided in the opening 591B of the functional layer 520 can be used for the wiring.

[0130] <Structure Example 3 of Display Device 700> The display device 700 of one embodiment of the present invention includes a driver circuit GD and a driver circuit SD (see FIG. 6A).

[0131] <<Configuration Example of the Driver Circuit GD>> The driver circuit GD supplies a first selection signal and a second selection signal.

[0132] <<Configuration Example of Driver Circuit SD>> The driver circuit SD supplies a first control signal and a second control signal.

[0133] <<Example of Wiring Configuration>> The wiring includes conductive film G1(i), conductive film G2(i), conductive film S1(j), conductive film S2(j), conductive film ANO, conductive film VCOM2, and conductive film V0 (see FIG. 7).

[0134] The conductive film G1(i) is supplied with a first selection signal, and the conductive film G2(i) is supplied with a second selection signal.

[0135] The conductive film S1(j) is supplied with a first control signal, and the conductive film S2(j) is supplied with a second control signal.

[0136] <<Configuration Example 1 of Pixel Circuit 530A(i,j)>> The pixel circuit 530A(i,j) is electrically connected to the conductive film G1(i) and the conductive film S1(j). The conductive film G1(i) supplies a first selection signal, and the conductive film S1(j) supplies a first control signal.

[0137] The pixel circuit 530A(i,j) drives the light-emitting device 550A based on the first selection signal and the first control signal, and the light-emitting device 550A emits light.

[0138] The light emitting device 550A has one electrode electrically connected to the pixel circuit 530A(i, j) and the other electrode electrically connected to the conductive film VCOM2.

[0139] <<Configuration Example 2 of Pixel Circuit 530A(i,j)>> The pixel circuit 530A(i,j) includes a switch SW21, a switch SW22, a transistor M21, a capacitor C21, and a node N21.

[0140] The transistor M21 includes a gate electrode electrically connected to the node N21, a first electrode electrically connected to the light emitting device 550A, and a second electrode electrically connected to the conductive film ANO.

[0141] The switch SW21 has a first terminal electrically connected to the node N21, a second terminal electrically connected to the conductive film S1(j), and a gate electrode having the function of controlling the conductive state or non-conductive state based on the potential of the conductive film G1(i).

[0142] The switch SW22 includes a first terminal electrically connected to the conductive film S2(j) and a gate electrode having a function of controlling the conductive state or non-conductive state based on the potential of the conductive film G2(i).

[0143] The capacitor C21 includes a conductive film electrically connected to the node N21 and a conductive film electrically connected to the second terminal of the switch SW22.

[0144] This allows an image signal to be stored in node N21. Alternatively, the potential of node N21 can be changed using switch SW22. Alternatively, the intensity of light emitted by light-emitting device 550A can be controlled using the potential of node N21. As a result, a novel device with excellent convenience, usability, and reliability can be provided.

[0145] <<Configuration Example 3 of Pixel Circuit 530A(i,j)>> The pixel circuit 530A(i,j) includes a switch SW23, a node N22, and a capacitor C22.

[0146] The switch SW23 has a first terminal electrically connected to the conductive film V0, a ​​second terminal electrically connected to the node N22, and a gate electrode having the function of controlling the conductive state or non-conductive state based on the potential of the conductive film G2(i).

[0147] The capacitor C22 includes a conductive film electrically connected to the node N21 and a conductive film electrically connected to the node N22.

[0148] The first electrode of the transistor M21 is electrically connected to a node N22.

[0149] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0150] Embodiment 4 In this embodiment, a structure of a light-emitting device that can be used for a display device according to one embodiment of the present invention will be described with reference to FIGS.

[0151] FIG. 8 illustrates a structure of a light-emitting device that can be used for a display device of one embodiment of the present invention.

[0152] The structure of the light-emitting device 550X described in this embodiment can be used in the display device of one embodiment of the present invention. Note that the description of the structure of the light-emitting device 550X can be applied to the light-emitting device 550A. Specifically, the symbol "X" used in the structure of the light-emitting device 550X can be replaced with "A" and the description of the light-emitting device 550A can be used. Similarly, the symbol "X" can be replaced with "B" or "C" and the structure of the light-emitting device 550X can be applied to the light-emitting device 550B or the light-emitting device 550C.

[0153] <Configuration Example of Light-Emitting Device 550X> A light-emitting device 550X described in this embodiment includes an electrode 551X, an electrode 552X, and a unit 103X. The electrode 552X overlaps with the electrode 551X, and the unit 103X is sandwiched between the electrode 552X and the electrode 551X.

[0154] <Configuration Example of Unit 103X> The unit 103X has a single layer structure or a laminated structure. For example, the unit 103X includes a layer 111X, a layer 112X, and a layer 113X (see FIG. 8). The unit 103X has a function of emitting light ELX.

[0155] Layer 111X is sandwiched between layer 113X and layer 112X, layer 113X is sandwiched between electrode 552X and layer 111X, and layer 112X is sandwiched between layer 111X and electrode 551X.

[0156] For example, the unit 103X may include a layer selected from functional layers such as a light-emitting layer, a hole-transporting layer, an electron-transporting layer, a carrier-blocking layer, etc. Also, the unit 103X may include a layer selected from functional layers such as a hole-injecting layer, an electron-injecting layer, an exciton-blocking layer, and a charge-generating layer.

[0157] <<Structure Example of Layer 112X>> For example, a material having a hole-transporting property can be used for the layer 112X. The layer 112X can also be referred to as a hole-transporting layer. Note that a structure in which a material having a larger band gap than that of the light-emitting material contained in the layer 111X is used for the layer 112X is preferable. This can suppress energy transfer from excitons generated in the layer 111X to the layer 112X.

[0158] [Material having hole transport properties] A material having a hole mobility of 1×10 −６ cm ２ A material having a hole transporting property can be suitably used as a material having a hole transporting property.

[0159] For example, an amine compound or an organic compound having a π-electron-rich heteroaromatic ring skeleton can be used as a material having hole transport properties. Specifically, a compound having an aromatic amine skeleton, a compound having a carbazole skeleton, a compound having a thiophene skeleton, a compound having a furan skeleton, or the like can be used. In particular, a compound having an aromatic amine skeleton or a compound having a carbazole skeleton is preferable because it has good reliability, high hole transport properties, and contributes to reducing driving voltage.

[0160] Examples of compounds having an aromatic amine skeleton include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviation: TPD), N,N'-bis(9,9'-spirobi[9H-fluoren]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), Examples of compounds that can be used include 4,4'-diphenyl-4"-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBiBP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4"-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), and N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF).

[0161] Examples of compounds having a carbazole skeleton that can be used include 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4′-di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), and 3,3′-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP).

[0162] Examples of compounds having a thiophene skeleton that can be used include 4,4′,4″-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), and 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV).

[0163] Examples of compounds having a furan skeleton that can be used include 4,4′,4″-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II), 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II), and the like.

[0164] <<Structural Example of Layer 113X>> For example, a material having an electron-transporting property, a material having an anthracene skeleton, a mixed material, or the like can be used for the layer 113X. The layer 113X can also be referred to as an electron-transporting layer. Note that a structure in which a material having a larger band gap than that of the light-emitting material contained in the layer 111X is used for the layer 113X is preferable. This can suppress energy transfer from excitons generated in the layer 111X to the layer 113X.

[0165] [Electron-Transporting Material] For example, a material having an electron mobility of 1×10 under the condition that the square root of the electric field strength V / cm is 600. −７ cm ２ / Vs or more, 5×10 −５ cm ２ A material having a .DELTA. / Vs or less can be suitably used as a material having electron transport properties. This can suppress the electron transport properties in the electron transport layer. Alternatively, it can control the amount of electrons injected into the light-emitting layer. Alternatively, it can prevent the light-emitting layer from becoming an electron-excess state.

[0166] For example, a metal complex or an organic compound having a π-electron-deficient heteroaromatic ring skeleton can be used as the material having electron transport properties.

[0167] Examples of metal complexes include bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq ２ ), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO), bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ), and the like can be used.

[0168] Examples of organic compounds having a π-electron-deficient heteroaromatic ring skeleton include heterocyclic compounds having a polyazole skeleton, heterocyclic compounds having a diazine skeleton, heterocyclic compounds having a pyridine skeleton, and heterocyclic compounds having a triazine skeleton. In particular, heterocyclic compounds having a diazine skeleton or heterocyclic compounds having a pyridine skeleton are preferred because of their high reliability. Furthermore, heterocyclic compounds having a diazine (pyrimidine or pyrazine) skeleton have high electron transport properties and can reduce driving voltage.

[0169] Examples of heterocyclic compounds having a polyazole skeleton include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: O XD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 2,2′,2″-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), and the like can be used.

[0170] Examples of heterocyclic compounds having a diazine skeleton include 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3-(3′-dibenzothiophen-4-yl)biphenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3′-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), and 2-[3′-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II). Noxaline (abbreviation: 2mCzBPDBq), 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzo[h]quinazoline (abbreviation: 4,8mDBtP2Bqn), etc. can be used.

[0171] Examples of heterocyclic compounds having a pyridine skeleton include 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), and the like.

[0172] Examples of heterocyclic compounds having a triazine skeleton include 2-[3′-(9,9-dimethyl-9H-fluoren-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn) and 2-(biphenyl-4-yl)-4-phenyl-6-(9,9′-spirobi[9H-fluoren]-2-yl)-1,3,5-triazine (abbreviation: BP-SFTzn). , 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-6-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn-02), and the like can be used.

[0173] [Material Having an Anthracene Skeleton] An organic compound having an anthracene skeleton can be used for the layer 113X. In particular, an organic compound including both an anthracene skeleton and a heterocyclic skeleton can be preferably used.

[0174] For example, an organic compound including both an anthracene skeleton and a nitrogen-containing five-membered ring skeleton can be used for the layer 113X. Alternatively, an organic compound including both an anthracene skeleton and a nitrogen-containing five-membered ring skeleton containing two heteroatoms in the ring can be used for the layer 113X. Specifically, a pyrazole ring, an imidazole ring, an oxazole ring, a thiazole ring, or the like can be preferably used as the heterocyclic skeleton.

[0175] For example, an organic compound including both an anthracene skeleton and a nitrogen-containing six-membered ring skeleton can be used for the layer 113X. Alternatively, an organic compound including both an anthracene skeleton and a nitrogen-containing six-membered ring skeleton including two heteroatoms in the ring can be used for the layer 113X. Specifically, a pyrazine ring, a pyrimidine ring, a pyridazine ring, or the like can be preferably used as the heterocyclic skeleton.

[0176] [Configuration Example of Mixed Material] A material in which a plurality of substances are mixed can be used for the layer 113X. Specifically, a mixed material containing an alkali metal, an alkali metal compound, or an alkali metal complex, and a substance having an electron-transport property can be used for the layer 113X. Note that the highest occupied molecular orbital (HOMO) level of the material having an electron-transport property is more preferably −6.0 eV or higher.

[0177] Note that the mixed material can be preferably used for the layer 113X in combination with a structure in which a composite material, which will be described separately, is used for the layer 104X. For example, a composite material of a substance having an electron-accepting property and a material having a hole-transporting property can be used for the layer 104X. Specifically, a composite material of a substance having an electron-accepting property and a substance having a relatively deep HOMO level HM1 of −5.7 eV or more and −5.4 eV or less can be used for the layer 104X (see FIG. 8 ). By using the mixed material for the layer 113X in combination with a structure in which such a composite material is used for the layer 104X, the reliability of the light-emitting device can be improved.

[0178] It is also preferable to combine a structure in which the mixed material is used for the layer 113X and the composite material is used for the layer 104X with a structure in which a material having hole-transporting properties is used for the layer 112X. For example, a substance having a HOMO level HM2 in the range of -0.2 eV to 0 eV, relative to the relatively deep HOMO level HM1, can be used for the layer 112X (see FIG. 8). This can improve the reliability of the light-emitting device. Note that in this specification and the like, the above-described light-emitting device may be referred to as a Recombination-Site Tailoring Injection structure (ReSTI structure).

[0179] The alkali metal, alkali metal compound, or alkali metal complex is preferably present with a concentration difference (including zero) in the thickness direction of the layer 113X.

[0180] For example, a metal complex containing an 8-hydroxyquinolinato structure can be used. Also, a methyl-substituted metal complex containing an 8-hydroxyquinolinato structure (for example, a 2-methyl-substituted or 5-methyl-substituted metal complex) can be used.

[0181] Examples of metal complexes containing an 8-hydroxyquinolinato structure include 8-hydroxyquinolinato-lithium (abbreviation: Liq), 8-hydroxyquinolinato-sodium (abbreviation: Naq), etc. In particular, complexes of monovalent metal ions, especially lithium complexes, are preferred, with Liq being more preferred.

[0182] <<Structure Example 1 of Layer 111X>> For example, a light-emitting material, or a light-emitting material and a host material, can be used for the layer 111X. The layer 111X can also be referred to as a light-emitting layer. Note that a structure in which the layer 111X is disposed in a region where holes and electrons recombine is preferable. This allows energy generated by carrier recombination to be efficiently converted into light and emitted.

[0183] Furthermore, it is preferable to arrange the layer 111X away from metals used for the electrodes, etc. This makes it possible to suppress the quenching phenomenon caused by the metals used for the electrodes, etc.

[0184] Furthermore, it is preferable to adjust the distance from a reflective electrode or the like to the layer 111X and place the layer 111X at an appropriate position according to the emission wavelength. This allows the interference phenomenon between the light reflected by the electrode or the like and the light emitted by the layer 111X to be utilized to reinforce the amplitudes. Furthermore, it is possible to strengthen the light spectrum by strengthening the light of a specific wavelength. Furthermore, it is possible to obtain a vivid emission color with high intensity. In other words, it is possible to form a microresonator structure (microcavity) by placing the layer 111X at an appropriate position between the electrodes or the like.

[0185] For example, fluorescent materials, phosphorescent materials, or materials exhibiting thermally activated delayed fluorescence (TADF) (also called TADF materials) can be used as the luminescent material, allowing the energy generated by carrier recombination to be emitted from the luminescent material as light ELX (see FIG. 8).

[0186] [Fluorescent Material] A fluorescent material can be used for the layer 111X. For example, the fluorescent materials exemplified below can be used for the layer 111X. Note that the fluorescent material is not limited thereto, and various known fluorescent materials can be used for the layer 111X.

[0187] Specifically, 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2′-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4′-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2′-bipyridine (abbreviation: PAPP2BPy), N,N′-diphenyl-N,N′-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N′-bis(3-methylphenyl)-N,N′-bis[3-(9-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: YGAPA), abbreviation: 2YGAPPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra(tert-butyl)perylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis(N,N' ,N′-triphenyl-1,4-phenylenediamine) (abbreviation: DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: 2PCAPPA), N,N′-(pyrene-1,6-diyl)bis[(6,N-diphenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), N,N′-diphenyl-N,N′-bis(9-phenyl-9H-carbazol-2-yl)naphtho[2,3-b;6,7-b']bisbenzofuran-3,10-diamine (abbreviation: 3,10PCA2Nbf(IV)-02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02), etc. can be used.

[0188] In particular, condensed aromatic diamine compounds typified by pyrenediamine compounds such as 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03 are preferred because they have high hole trapping properties and are excellent in luminous efficiency or reliability.

[0189] Also, N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), N,N,N',N',N'',N'',N''',N'''-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), Coumarin 30, 9,10-diphenyl-2-[N-phenyl-N-(9-phenyl-carbazol-3-yl)-amino]-anthracene (abbreviation: 2PCAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N' ,N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis(biphenyl-2-yl)-N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenylanthracen-9-amine (abbreviation: DPhAPhA), coumarin 545T, N,N'-diphenylquinacridone (abbreviation: DPQd), rubrene, 5,12-bis(biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), and the like can be used.

[0190] Further, 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyran-4-ylidene)propanedinitrile (abbreviation: DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N,N,N',N'-tetrakis(2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene)propanedinitrile (abbreviation: DCM3), (4-methylphenyl)tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]ki] 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB), 2-(2,6-bis{2-[4-(di 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: BisDCM), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: BisDCJ™), and the like can be used.

[0191] [Phosphorescent Material] A phosphorescent material can be used for the layer 111X. For example, the phosphorescent materials exemplified below can be used for the layer 111X. Note that the present invention is not limited thereto, and various known phosphorescent materials can be used for the layer 111X.

[0192] For example, organometallic iridium complexes having a 4H-triazole skeleton, organometallic iridium complexes having a 1H-triazole skeleton, organometallic iridium complexes having an imidazole skeleton, organometallic iridium complexes having a phenylpyridine derivative having an electron-withdrawing group as a ligand, organometallic iridium complexes having a pyrimidine skeleton, organometallic iridium complexes having a pyrazine skeleton, organometallic iridium complexes having a pyridine skeleton, rare earth metal complexes, platinum complexes, and the like can be used for the layer 111X.

[0193] [Phosphorescent Material (Blue)] Examples of organometallic iridium complexes having a 4H-triazole skeleton include tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN ２ ]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp) ３ ]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Mptz) ３ ]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(iPrptz-3b) ３ ]), etc. can be used.

[0194] Examples of organometallic iridium complexes having a 1H-triazole skeleton include tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(Mptz1-mp) ３ ]), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Prptz1-Me) ３ ]), etc. can be used.

[0195] Examples of organometallic iridium complexes having an imidazole skeleton include fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpim) ３]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviation: [Ir(dmpimpt-Me) ３ ]), etc. can be used.

[0196] Examples of organometallic iridium complexes having a phenylpyridine derivative having an electron-withdrawing group as a ligand include bis[2-(4′,6′-difluorophenyl)pyridinato-N,C ２’ ]iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinato-N,C ２’ ]iridium(III) picolinate (abbreviation: FIrpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C ２’} Iridium(III) picolinate (abbreviation: [Ir(CF ３ ppy) ２ (pic)]), bis[2-(4',6'-difluorophenyl)pyridinato-N,C ２’ ] Iridium (III) acetylacetonate (abbreviation: FIracac), etc. can be used.

[0197] These compounds exhibit blue phosphorescence and have a peak emission wavelength in the range of 440 nm to 520 nm.

[0198] [Phosphorescent Material (Green)] Examples of organometallic iridium complexes having a pyrimidine skeleton include tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm) ３ ]), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm) ３ ]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm) ２ (acac)]), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm) ２(acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm) ２ (acac)]), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm) ２ (acac)]), (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm) ２ (acac)]), etc. can be used.

[0199] Examples of organometallic iridium complexes having a pyrazine skeleton include (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-Me) ２ (acac)]), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-iPr) ２ (acac)]), etc. can be used.

[0200] Examples of organometallic iridium complexes having a pyridine skeleton include tris(2-phenylpyridinato-N,C ２’ ) Iridium(III) (abbreviation: [Ir(ppy) ３ ]), bis(2-phenylpyridinato-N,C ２’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(ppy) ２ (acac)]), bis(benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [Ir(bzq) ２ (acac)]), tris(benzo[h]quinolinato)iridium(III) (abbreviation: [Ir(bzq) ３ ]), tris(2-phenylquinolinato-N,C ２’ ) Iridium(III) (abbreviation: [Ir(pq) ３ ]), bis(2-phenylquinolinato-N,C ２’ ) iridium(III) acetylacetonate (abbreviation: [Ir(pq) ２(acac)]), [2-d ３ -methyl-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(5-d ３ -methyl-2-pyridinyl-κN ２ )phenyl-κC]iridium(III) (abbreviation: [Ir(5mppy-d ３ ) ２ (mbfpypy-d ３ ) )]), [2-d ３ [2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: [Ir(ppy) ２ (mbfpypy-d ３ ) )]), etc. can be used.

[0201] Examples of rare earth metal complexes include tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: [Tb(acac) ３ (Phen)]), etc.

[0202] These compounds mainly exhibit green phosphorescence, with a peak emission wavelength between 500 nm and 600 nm. Organometallic iridium complexes having a pyrimidine skeleton are also remarkably superior in reliability and luminous efficiency.

[0203] [Phosphorescent Material (Red)] Examples of organometallic iridium complexes having a pyrimidine skeleton include (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm) ２ (dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm) ２ (dpm)]), bis[4,6-di(naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(dpm) ２ (dpm)]), etc. can be used.

[0204] Examples of organometallic iridium complexes having a pyrazine skeleton include (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr) ２ (acac)]), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr) ２ (dpm)]), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq) ２ (acac)]), etc. can be used.

[0205] Examples of organometallic iridium complexes having a pyridine skeleton include tris(1-phenylisoquinolinato-N,C ２’ ) Iridium(III) (abbreviation: [Ir(piq) ３ ]), bis(1-phenylisoquinolinato-N,C ２’ ) iridium(III) acetylacetonate (abbreviation: [Ir(piq) ２ (acac)]), etc. can be used.

[0206] Examples of rare earth metal complexes include tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM) ３ (Phen)]), tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: [Eu(TTA) ３ (Phen)]), etc. can be used.

[0207] As the platinum complex, for example, 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (abbreviation: PtOEP) can be used.

[0208] These compounds exhibit red phosphorescence, with an emission peak at 600 nm to 700 nm. The organometallic iridium complexes having a pyrazine skeleton emit red light with a chromaticity suitable for use in display devices.

[0209] [Substance Exhibiting Thermally Activated Delayed Fluorescence (TADF)] A TADF material can be used for the layer 111X. When a TADF material is used as a light-emitting material, the S1 level of the host material is preferably higher than the S1 level of the TADF material. In addition, the T1 level of the host material is preferably higher than the T1 level of the TADF material.

[0210] For example, the TADF materials listed below can be used as the light-emitting material. However, the light-emitting material is not limited to these, and various known TADF materials can be used.

[0211] In addition, the difference between the S1 and T1 levels of TADF materials is small, and reverse intersystem crossing (upconversion) from the triplet excited state to the singlet excited state can be achieved with a small amount of thermal energy. This allows efficient generation of the singlet excited state from the triplet excited state. Furthermore, the triplet excited energy can be converted into luminescence.

[0212] Furthermore, an exciplex (also called an exciplex) that forms an excited state with two types of substances has an extremely small difference between the S1 level and the T1 level, and functions as a TADF material that can convert triplet excitation energy into singlet excitation energy.

[0213] The T1 level can be determined by using a phosphorescence spectrum observed at low temperatures (e.g., 77 K to 10 K). When a tangent line is drawn at the base of the fluorescence spectrum on the short wavelength side of the TADF material, and the energy of the wavelength of the extrapolated line is defined as the S1 level, and when a tangent line is drawn at the base of the phosphorescence spectrum on the short wavelength side of the TADF material, and the energy of the wavelength of the extrapolated line is defined as the T1 level, the difference between the S1 level and the T1 level is preferably 0.3 eV or less, and more preferably 0.2 eV or less.

[0214] For example, TADF materials can include fullerene and its derivatives, acridine and its derivatives, eosin derivatives, etc. Also, metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), palladium (Pd), etc. can be used as TADF materials.

[0215] Specifically, protoporphyrin-tin fluoride complex (SnF), whose structural formula is shown below, ２ (Proto IX)), mesoporphyrin-tin fluoride complex (SnF ２ (Meso IX)), hematoporphyrin-tin fluoride complex (SnF ２ (Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF ２ (Copro III-4Me)), octaethylporphyrin-tin fluoride complex (SnF ２ (OEP)), etioporphyrin-tin fluoride complex (SnF ２ (Etio I)), octaethylporphyrin-platinum chloride complex (PtCl ２ OEP), etc. can be used.

[0216]

[0217] Furthermore, for example, a heterocyclic compound having one or both of a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring can be used as the TADF material.

[0218] Specifically, the structural formulas of these compounds are as follows: 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-9′-phenyl-9H,9′H-3,3′-bicarbazole (abbreviation: PCCzTzn), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl]-4 ,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10′H-spiro[acridin-9,9′-anthracene]-10′-one (abbreviation: ACRSA), and the like can be used.

[0219]

[0220] The heterocyclic compound has a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring, and therefore has high electron transport and hole transport properties, and is therefore preferred. In particular, among skeletons having a π-electron-deficient heteroaromatic ring, pyridine skeletons, diazine skeletons (pyrimidine skeletons, pyrazine skeletons, pyridazine skeletons), and triazine skeletons are preferred because they are stable and reliable. In particular, benzofuropyrimidine skeletons, benzothienopyrimidine skeletons, benzofuropyrazine skeletons, and benzothienopyrazine skeletons are preferred because they have high electron acceptability and good reliability.

[0221] Among skeletons having a π-electron-rich heteroaromatic ring, it is preferable to have at least one of an acridine skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a furan skeleton, a thiophene skeleton, and a pyrrole skeleton because they are stable and reliable. Note that the dibenzofuran skeleton is preferable as the furan skeleton, and the dibenzothiophene skeleton is preferable as the thiophene skeleton. Furthermore, the indole skeleton, the carbazole skeleton, the indolocarbazole skeleton, the bicarbazole skeleton, and the 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton are particularly preferable as the pyrrole skeleton.

[0222] In addition, a substance in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded is particularly preferred because the electron-donating property of the π-electron-rich heteroaromatic ring and the electron-accepting property of the π-electron-deficient heteroaromatic ring are both strengthened, and the energy difference between the S1 level and the T1 level is reduced, thereby enabling efficient thermally activated delayed fluorescence to be obtained. In addition, an aromatic ring bonded to an electron-withdrawing group such as a cyano group may be used instead of the π-electron-deficient heteroaromatic ring. In addition, an aromatic amine skeleton, a phenazine skeleton, or the like may be used as the π-electron-rich skeleton.

[0223] Furthermore, examples of the π-electron-deficient skeleton that can be used include a xanthene skeleton, a thioxanthene dioxide skeleton, an oxadiazole skeleton, a triazole skeleton, an imidazole skeleton, an anthraquinone skeleton, a boron-containing skeleton such as phenylborane or boranthrene, an aromatic ring or heteroaromatic ring having a nitrile group or a cyano group such as benzonitrile or cyanobenzene, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, and a sulfone skeleton.

[0224] In this way, a π-electron deficient skeleton and a π-electron rich skeleton can be used in place of at least one of a π-electron deficient heteroaromatic ring and a π-electron rich heteroaromatic ring.

[0225] <<Structure Example 2 of Layer 111X>> A material having carrier transport properties can be used as the host material. For example, a material having hole transport properties, a material having electron transport properties, a substance exhibiting thermally activated delayed fluorescence (TADF), a material having an anthracene skeleton, a mixed material, or the like can be used as the host material. Note that a structure in which a material having a larger band gap than that of the light-emitting material contained in the layer 111X is used as the host material is preferable. This can suppress energy transfer from excitons generated in the layer 111X to the host material.

[0226] [Material having hole transport properties] A material having a hole mobility of 1×10 −６ cm ２ For example, the material having a hole-transport property that can be used for the layer 112X can be used for the layer 111X.

[0227] [Electron-Transporting Material] A metal complex or an organic compound having a π-electron-deficient heteroaromatic ring skeleton can be used as the electron-transporting material. For example, the electron-transporting material that can be used for the layer 113X can be used for the layer 111X.

[0228] [Materials Having an Anthracene Skeleton] Organic compounds having an anthracene skeleton can be used as host materials. In particular, when a fluorescent material is used as the light-emitting material, organic compounds having an anthracene skeleton are suitable. This allows for the realization of light-emitting devices with good luminous efficiency and durability.

[0229] As the organic compound having an anthracene skeleton, an organic compound having a diphenylanthracene skeleton, particularly an organic compound having a 9,10-diphenylanthracene skeleton, is preferred because it is chemically stable. Furthermore, when the host material has a carbazole skeleton, it is preferred because it has improved hole injection and transport properties. In particular, when the host material contains a dibenzocarbazole skeleton, the HOMO level is shallower by about 0.1 eV than that of a host material having a carbazole skeleton, making it easier for holes to enter, and it also has excellent hole transport properties and high heat resistance, making it suitable. From the viewpoint of hole injection and transport properties, a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of the carbazole skeleton.

[0230] Therefore, a substance having both a 9,10-diphenylanthracene skeleton and a carbazole skeleton, a substance having both a 9,10-diphenylanthracene skeleton and a benzocarbazole skeleton, or a substance having both a 9,10-diphenylanthracene skeleton and a dibenzocarbazole skeleton is preferable as the host material.

[0231] For example, 6-[3-(9,10-diphenyl-2-anthryl)phenyl]benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-[4′-(9-phenyl-9H-fluoren-9-yl)biphenyl-4-yl]anthracene (abbreviation: FLPPA), 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 9-[4-(9-phenylcarbazole- 3-yl)]phenyl-10-phenylanthracene (abbreviation: PCzPA), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 3-[4-(1-naphthyl)-phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), and the like can be used.

[0232] In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA exhibit very good properties.

[0233] [Substances Exhibiting Thermally Activated Delayed Fluorescence (TADF)] A TADF material can be used as a host material. When a TADF material is used as a host material, triplet excitation energy generated in the TADF material can be converted to singlet excitation energy by reverse intersystem crossing. Furthermore, the excitation energy can be transferred to a light-emitting material. In other words, the TADF material functions as an energy donor, and the light-emitting material functions as an energy acceptor. This can improve the luminous efficiency of a light-emitting device.

[0234] This is very effective when the luminescent material is a fluorescent luminescent material. Furthermore, in this case, in order to obtain high luminous efficiency, it is preferable that the S1 level of the TADF material is higher than the S1 level of the fluorescent luminescent material. Furthermore, it is preferable that the T1 level of the TADF material is higher than the S1 level of the fluorescent luminescent material. Therefore, it is preferable that the T1 level of the TADF material is higher than the T1 level of the fluorescent luminescent material.

[0235] It is also preferable to use a TADF material that emits light that overlaps with the wavelength of the lowest-energy absorption band of the fluorescent material, since this allows for smooth transfer of excitation energy from the TADF material to the fluorescent material, resulting in efficient light emission.

[0236] Furthermore, in order to efficiently generate singlet excitation energy from triplet excitation energy through reverse intersystem crossing, it is preferable that carrier recombination occurs in the TADF material. It is also preferable that the triplet excitation energy generated in the TADF material does not transfer to the triplet excitation energy of the fluorescent material. To this end, it is preferable that the fluorescent material has a protecting group around the luminophore (the skeleton responsible for luminescence) possessed by the fluorescent material. The protecting group is preferably a substituent that does not have a π bond, and is preferably a saturated hydrocarbon. Specific examples include alkyl groups having 3 to 10 carbon atoms, substituted or unsubstituted cycloalkyl groups having 3 to 10 carbon atoms, and trialkylsilyl groups having 3 to 10 carbon atoms. It is even more preferable that there are multiple protecting groups. Substituents that do not have a π bond have poor carrier transport function, so the distance between the TADF material and the luminophore of the fluorescent material can be increased without significantly affecting carrier transport or carrier recombination.

[0237] Here, the term "luminophore" refers to an atomic group (skeleton) that causes light emission in a fluorescent substance. The luminophore preferably has a skeleton having a π bond, preferably contains an aromatic ring, and preferably has a fused aromatic ring or a fused heteroaromatic ring.

[0238] Examples of such luminophores include a phenanthrene skeleton, a stilbene skeleton, an acridone skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, a naphthobisbenzofuran skeleton, etc. In particular, fluorescent substances having a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, or a naphthobisbenzofuran skeleton are preferred because of their high fluorescence quantum yield.

[0239] For example, a TADF material that can be used as a light-emitting material can be used as a host material.

[0240] [Configuration Example 1 of Mixed Material] A material obtained by mixing a plurality of substances can be used as the host material. For example, a material having electron transport properties and a material having hole transport properties can be used as the mixed material. The weight ratio of the material having hole transport properties to the material having electron transport properties contained in the mixed material can be set to (material having hole transport properties / material having electron transport properties) = (1 / 19) or more and (19 / 1) or less. This allows the carrier transport properties of the layer 111X to be easily adjusted. Furthermore, the recombination region can be easily controlled.

[0241] [Configuration Example 2 of Mixed Material] A material mixed with a phosphorescent material can be used as a host material. When a fluorescent material is used as an emitting material, the phosphorescent material can be used as an energy donor that provides excitation energy to the fluorescent material.

[0242] [Structure Example 3 of Mixed Material] A mixed material containing a material that forms an exciplex can be used as a host material. For example, a material whose emission spectrum of the formed exciplex overlaps with the wavelength of the lowest-energy absorption band of the light-emitting material can be used as a host material. This makes energy transfer smooth, thereby improving light-emitting efficiency. Alternatively, driving voltage can be suppressed. With such a structure, light emission can be efficiently obtained using Exciplex-Triple Energy Transfer (ExTET), which is energy transfer from the exciplex to the light-emitting material (phosphorescent material).

[0243] At least one of the materials forming the exciplex can be a phosphorescent material, which allows for the utilization of reverse intersystem crossing or the efficient conversion of triplet excitation energy to singlet excitation energy.

[0244] As a combination of materials for forming an exciplex, it is preferable that the HOMO level of the material having hole transport properties is equal to or higher than the HOMO level of the material having electron transport properties. Alternatively, it is preferable that the lowest unoccupied molecular orbital (LUMO) level of the material having hole transport properties is equal to or higher than the LUMO level of the material having electron transport properties. This allows for efficient formation of an exciplex. The LUMO level and HOMO level of a material can be derived from electrochemical properties (reduction potential and oxidation potential). Specifically, the reduction potential and oxidation potential can be measured using cyclic voltammetry (CV) measurement.

[0245] The formation of exciplexes can be confirmed, for example, by comparing the emission spectra of a material having hole transport properties, a material having electron transport properties, and a mixed film obtained by mixing these materials, and observing the phenomenon in which the emission spectrum of the mixed film is shifted to longer wavelengths than the emission spectra of each material (or has a new peak on the longer wavelength side). Alternatively, the formation of exciplexes can be confirmed by comparing the transient photoluminescence (PL) of a material having hole transport properties, the transient PL of a material having electron transport properties, and a mixed film obtained by mixing these materials, and observing differences in transient response, such as the transient PL lifetime of the mixed film having a longer-lifetime component or a larger proportion of delayed components than the transient PL lifetimes of the individual materials. The above-mentioned transient PL may also be interpreted as transient electroluminescence (EL). In other words, the formation of exciplexes can also be confirmed by comparing the transient EL of a material having hole transport properties, the transient EL of a material having electron transport properties, and a mixed film obtained by mixing these materials, and observing the differences in transient response.

[0246] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0247] Embodiment 5 In this embodiment, a structure of a light-emitting device that can be used for a display device according to one embodiment of the present invention will be described with reference to FIGS.

[0248] The structure of the light-emitting device 550X described in this embodiment can be used in the display device of one embodiment of the present invention. Note that the description of the structure of the light-emitting device 550X can be applied to the light-emitting device 550A. Specifically, the symbol "X" used in the structure of the light-emitting device 550X can be replaced with "A" and the description of the light-emitting device 550A can be used. Similarly, the symbol "X" can be replaced with "B" or "C" and the structure of the light-emitting device 550X can be applied to the light-emitting device 550B or the light-emitting device 550C.

[0249] <Structure Example of Light-Emitting Device 550X> A light-emitting device 550X described in this embodiment includes an electrode 551X, an electrode 552X, a unit 103X, and a layer 104X (see FIG. 8).

[0250] The electrode 552X overlaps with the electrode 551X, and the unit 103X is sandwiched between the electrode 551X and the electrode 552X. The layer 104X is sandwiched between the electrode 551X and the unit 103X. Note that the structure described in Embodiment 4 can be used for the unit 103X, for example.

[0251] <Structure Example of Electrode 551X> For example, a conductive material can be used for the electrode 551X. Specifically, a single layer or a stacked layer of a film containing a metal, an alloy, or a conductive compound can be used for the electrode 551X.

[0252] For example, a film that efficiently reflects light can be used for the electrode 551X. Specifically, a film of a metal such as an alloy containing silver and copper, an alloy containing silver and palladium, or aluminum can be used for the electrode 551X.

[0253] Furthermore, for example, a metal film that transmits part of the light and reflects the other part of the light can be used for the electrode 551X. This allows a microresonator structure (microcavity) to be provided in the light-emitting device 550X. Alternatively, light of a specific wavelength can be extracted more efficiently than other light. Alternatively, light with a narrow full width at half maximum of the spectrum can be extracted. Alternatively, light of a vivid color can be extracted.

[0254] For example, a film that transmits visible light can be used for the electrode 551X. Specifically, a single layer or stacked layer of a metal film, an alloy film, a conductive oxide film, or the like that is thin enough to transmit light can be used for the electrode 551X.

[0255] In particular, a material having a work function of 4.0 eV or more can be suitably used for the electrode 551X.

[0256] For example, a conductive oxide containing indium can be used, such as indium oxide, indium oxide-tin oxide (abbreviation: ITO), indium oxide-tin oxide containing silicon or silicon oxide (abbreviation: ITSO), indium oxide-zinc oxide, or indium oxide containing tungsten oxide and zinc oxide (abbreviation: IWZO).

[0257] Alternatively, for example, a conductive oxide containing zinc can be used, such as zinc oxide, zinc oxide doped with gallium, or zinc oxide doped with aluminum.

[0258] Alternatively, for example, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), or a nitride of a metal material (e.g., titanium nitride) can be used. Alternatively, graphene can be used.

[0259] <<Structure Example 1 of Layer 104X>> For example, a material having a hole-injecting property can be used for the layer 104X. The layer 104X can also be referred to as a hole-injecting layer.

[0260] For example, the hole mobility is 1×10 when the square root of the electric field strength V / cm is 600. −３ cm ２ / Vs or less can be used for the layer 104X. ４ Ω・cm or more 1×10 ７ A film having an electrical resistivity of Ω·cm or less can be used for the layer 104X. ４ Ω・cm or more 1×10 ７It has an electrical resistivity of Ω cm or less, and more preferably, 1×10 ５ Ω・cm or more 1×10 ７ It has an electrical resistivity of Ω·cm or less.

[0261] <<Structure Example 2 of Layer 104X>> Specifically, a substance having an electron-accepting property can be used for the layer 104X. Alternatively, a composite material containing a plurality of substances can be used for the layer 104X. This can make it easier to inject holes from the electrode 551X, for example. Alternatively, the driving voltage of the light-emitting device 550X can be reduced.

[0262] [Substance with Electron Accepting Property] Organic compounds and inorganic compounds can be used as the substance with electron accepting property. The substance with electron accepting property can extract electrons from the adjacent hole transport layer or the material with hole transporting property by applying an electric field.

[0263] For example, a compound having an electron-withdrawing group (a halogen group or a cyano group) can be used as the electron-accepting substance. Note that organic compounds having electron-accepting properties can be easily vapor-deposited and easily formed into a film. This can increase the productivity of the light-emitting device 550X.

[0264] Specifically, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCCNNQ), 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyren-2-ylidene)malononitrile, and the like can be used.

[0265] In particular, a compound in which an electron-withdrawing group is bonded to a condensed aromatic ring having a plurality of heteroatoms, such as HAT-CN, is thermally stable and is therefore preferred.

[0266] [3] Radialene derivatives having an electron-withdrawing group (particularly a halogen group such as a fluoro group or a cyano group) are also preferred because they have very high electron-accepting properties.

[0267] Specifically, α,α',α''-1,2,3-cyclopropane triylidene tris[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α',α''-1,2,3-cyclopropane triylidene tris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], α,α',α''-1,2,3-cyclopropane triylidene tris[2,3,4,5,6-pentafluorobenzeneacetonitrile], and the like can be used.

[0268] Furthermore, transition metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide can be used as the electron-accepting substance.

[0269] In addition, phthalocyanine (abbreviation: H ２ Examples of compounds that can be used include phthalocyanine compounds such as copper(II) phthalocyanine (abbreviation: CuPc), phthalocyanine complex compounds such as copper(II) phthalocyanine (abbreviation: CuPc), and compounds having an aromatic amine skeleton such as 4,4′-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB) and N,N′-bis[4-bis(3-methylphenyl)aminophenyl]-N,N′-diphenyl-4,4′-diaminobiphenyl (abbreviation: DNTPD).

[0270] Alternatively, polymers such as poly(3,4-ethylenedioxythiophene) / polystyrene sulfonic acid (abbreviation: PEDOT / PSS) can be used.

[0271] [Structure Example 1 of Composite Material] For example, a composite material containing a substance having an electron-accepting property and a material having a hole-transporting property can be used for the layer 104X. As a result, not only a material having a high work function but also a material having a low work function can be used for the electrode 551X. Alternatively, a material for the electrode 551X can be selected from a wide range of materials regardless of the work function.

[0272] For example, compounds having an aromatic amine skeleton, carbazole derivatives, aromatic hydrocarbons, aromatic hydrocarbons having a vinyl group, and polymeric compounds (oligomers, dendrimers, polymers, etc.) can be used as the material having hole transport properties for the composite material. −６ cm ２ For example, the material having a hole-transport property that can be used for the layer 112X can be used for the composite material.

[0273] Furthermore, a substance having a relatively deep HOMO level can be preferably used as the material having hole-transporting properties of the composite material. Specifically, the HOMO level is preferably −5.7 eV or more and −5.4 eV or less. This facilitates hole injection into the unit 103X. Furthermore, it facilitates hole injection into the layer 112X. Furthermore, it improves the reliability of the light-emitting device 550X.

[0274] Examples of compounds having an aromatic amine skeleton that can be used include N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), N,N'-bis[4-bis(3-methylphenyl)aminophenyl]-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: DNTPD), and 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B).

[0275] Examples of the carbazole derivative include 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole, and carbazole (abbreviation: PCzPCN1), 4,4′-di(N-carbazolyl)biphenyl (abbreviation: CBP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 1,4-bis[4-(N-carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene, and the like can be used.

[0276] Examples of aromatic hydrocarbons include 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 2-tert-butyl-9,10-di(1-naphthyl)anthracene, 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAnth), 9,10-bis(4-methyl-1-naphthyl)anthracene (abbreviation: DMNA), 2-tert-butyl-9,10 10,10'-bis[2-(1-naphthyl)phenyl]anthracene, 9,10-bis[2-(1-naphthyl)phenyl]anthracene, 2,3,6,7-tetramethyl-9,10-di(1-naphthyl)anthracene, 2,3,6,7-tetramethyl-9,10-di(2-naphthyl)anthracene, 9,9'-bianthryl, 10,10'-diphenyl-9,9'-bianthryl, 10,10'-bis(2-phenylphenyl)-9,9'-bianthryl, 10,10'-bis[(2,3,4,5,6-pentaphenyl)phenyl]-9,9'-bianthryl, anthracene, tetracene, rubrene, perylene, 2,5,8,11-tetra(tert-butyl)perylene, pentacene, coronene, and the like can be used.

[0277] Examples of aromatic hydrocarbons having a vinyl group include 4,4'-bis(2,2-diphenylvinyl)biphenyl (abbreviation: DPVBi), 9,10-bis[4-(2,2-diphenylvinyl)phenyl]anthracene (abbreviation: DPVPA), etc.

[0278] Examples of polymer compounds that can be used include poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviation: PTPDMA), and poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviation: Poly-TPD).

[0279] For example, a substance having a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, or an anthracene skeleton can be suitably used as the material having hole transport properties for the composite material. Furthermore, a substance having an aromatic amine with a substituent containing a dibenzofuran ring or a dibenzothiophene ring, an aromatic monoamine with a naphthalene ring, or an aromatic monoamine in which a 9-fluorenyl group is bonded to the nitrogen of the amine via an arylene group can be used as the material having hole transport properties for the composite material. Note that the use of a substance having an N,N-bis(4-biphenyl)amino group can improve the reliability of the light-emitting device 550X.

[0280] Examples of these materials include N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4′-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4″-phenyltriphenylamine (abbreviation: BnfBB1BP), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2 -d]furan-6-amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophen-4-yl)phenyl]-N-phenyl -4-biphenylamine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4',4''-diphenyltriphenylamine (abbreviation: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4'-diphenyl-4''-(6;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl-4''-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB-0 3), 4,4'-diphenyl-4''-(7-phenyl)naphthyl-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-diphenyl-4''-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B), 4,4'-diphenyl-4''-(7;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-diphenyl-4''-(4;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB), 4,4'-Diphenyl-4''-(5;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenylyl)-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenylyl)-4'-[4-(2-naphthyl)phenyl] [4'-(3-phenyl-9H-carbazol-9-yl)biphenyl-4''-[ ... N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9′-spirobi[9H-fluorene]-2-amine (abbreviation: PCBNBSF), N,N- Bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: BBASF), N,N-bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: oFBiSF), N-(biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)dibenzofuran-4-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4' -[4-(9-phenylfluoren-9-yl)phenyl]triphenylamine (abbreviation: BPAFLBi), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'- Di(1-naphthyl)-4"-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviation: PCBBiF), N,N-bis(9 N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-4-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-3-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-2-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-1-amine, and the like can be used.

[0281] [Configuration Example 2 of Composite Material] For example, a composite material containing a substance having electron-accepting properties, a material having hole-transporting properties, and an alkali metal fluoride or an alkaline earth metal fluoride can be used as the material having hole-injecting properties. In particular, a composite material containing fluorine atoms at an atomic ratio of 20% or more can be preferably used. This can reduce the refractive index of the layer 104X. Alternatively, a layer with a low refractive index can be formed inside the light-emitting device 550X. Alternatively, the external quantum efficiency of the light-emitting device 550X can be improved.

[0282] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0283] Embodiment 6 In this embodiment, a structure of a light-emitting device that can be used for a display device according to one embodiment of the present invention will be described with reference to FIGS.

[0284] The structure of the light-emitting device 550X described in this embodiment can be used in the display device of one embodiment of the present invention. Note that the description of the structure of the light-emitting device 550X can be applied to the light-emitting device 550A. Specifically, the symbol "X" used in the structure of the light-emitting device 550X can be replaced with "A" and the description of the light-emitting device 550A can be used. Similarly, the symbol "X" can be replaced with "B" or "C" and the structure of the light-emitting device 550X can be applied to the light-emitting device 550B or the light-emitting device 550C.

[0285] <Structure Example of Light-Emitting Device 550X> A light-emitting device 550X described in this embodiment includes an electrode 551X, an electrode 552X, a unit 103X, and a layer 105X (see FIG. 8).

[0286] The electrode 552X has a region overlapping with the electrode 551X, and the unit 103X has a region sandwiched between the electrode 551X and the electrode 552X. The layer 105X has a region sandwiched between the unit 103X and the electrode 552X. Note that the structure described in Embodiment 4 can be used for the unit 103X, for example.

[0287] <Structure Example of Electrode 552X> For example, a conductive material can be used for the electrode 552X. Specifically, a material containing a metal, an alloy, or a conductive compound can be used as a single layer or a stacked layer for the electrode 552X.

[0288] For example, the material that can be used for the electrode 551X described in Embodiment 5 can be used for the electrode 552X. In particular, a material having a work function smaller than that of the electrode 551X can be suitably used for the electrode 552X. Specifically, a material having a work function of 3.8 eV or less is preferable.

[0289] For example, elements belonging to Group 1 of the periodic table, elements belonging to Group 2 of the periodic table, rare earth metals, and alloys containing these can be used for the electrode 552X.

[0290] Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), strontium (Sr), europium (Eu), ytterbium (Yb), and alloys containing these, such as an alloy of magnesium and silver or an alloy of aluminum and lithium, can be used for the electrode 552X.

[0291] <<Configuration Example of Layer 105X>> For example, a material having an electron injection property can be used for the layer 105X. The layer 105X can also be referred to as an electron injection layer.

[0292] Specifically, a substance having electron donating properties can be used for the layer 105X. Alternatively, a composite material of a substance having electron donating properties and a material having electron transporting properties can be used for the layer 105X. Alternatively, an electride can be used for the layer 105X. This can facilitate electron injection from the electrode 552X, for example. Alternatively, not only a material having a low work function but also a material having a high work function can be used for the electrode 552X. Alternatively, a material for the electrode 552X can be selected from a wide range of materials regardless of the work function. Specifically, aluminum (Al), silver (Ag), indium oxide-tin oxide (abbreviated as ITO), indium oxide-tin oxide containing silicon or silicon oxide, or the like can be used for the electrode 552X. Alternatively, the driving voltage of the light-emitting device 550X can be reduced.

[0293] [Electron-donating substance] For example, alkali metals, alkaline earth metals, rare earth metals, or compounds thereof (oxides, halides, carbonates, etc.) can be used as the electron-donating substance. Alternatively, organic compounds such as tetrathianaphthacene (abbreviation: TTN), nickelocene, and decamethylnickelocene can also be used as the electron-donating substance.

[0294] Examples of alkali metal compounds (including oxides, halides, and carbonates) that can be used include lithium oxide, lithium fluoride (LiF), cesium fluoride (CsF), lithium carbonate, cesium carbonate, and 8-hydroxyquinolinato-lithium (abbreviated as Liq).

[0295] Alkaline earth metal compounds (including oxides, halides, and carbonates) include calcium fluoride (CaF ２ ), etc. can be used.

[0296] [Configuration Example 1 of Composite Material] A composite material of a plurality of substances can be used as a material having an electron injecting property. For example, a material having an electron donating property and a material having an electron transporting property can be used as a composite material.

[0297] [Electron-Transporting Material] For example, a material having an electron mobility of 1×10 under the condition that the square root of the electric field strength V / cm is 600. −７ cm ２ / Vs or more, 5×10 −５ cm ２ A material having a .DELTA..times ...

[0298] A metal complex or an organic compound having a π-electron-deficient heteroaromatic skeleton can be used as the material having an electron-transport property. For example, the material having an electron-transport property that can be used for the layer 113X can be used for the layer 105X.

[0299] [Configuration Example 2 of Composite Material] A microcrystalline alkali metal fluoride and a material having electron transport properties can be used for the composite material. Alternatively, a microcrystalline alkaline earth metal fluoride and a material having electron transport properties can be used for the composite material. In particular, a composite material containing 50 wt % or more of an alkali metal fluoride or an alkaline earth metal fluoride can be preferably used. Alternatively, a composite material containing an organic compound having a bipyridine skeleton can be preferably used. This can reduce the refractive index of the layer 105X. Alternatively, the external quantum efficiency of the light-emitting device 550X can be improved.

[0300] [Structure Example 3 of Composite Material] For example, a composite material containing a first organic compound having an unshared electron pair and a first metal can be used for the layer 105X. The sum of the number of electrons in the first organic compound and the number of electrons in the first metal is preferably an odd number. The molar ratio of the first metal to 1 mole of the first organic compound is preferably 0.1 to 10, more preferably 0.2 to 2, and even more preferably 0.2 to 0.8.

[0301] This allows the first organic compound having an unshared electron pair to interact with the first metal to form a Singly Occupied Molecular Orbital (SOMO), and also reduces the barrier between the electrode 552X and the layer 105X when electrons are injected from the electrode 552X to the layer 105X.

[0302] The spin density measured by electron spin resonance (ESR) is preferably 1×10 １６ spins / cm ３ or more, more preferably 5 × 10 １６ spins / cm ３ More preferably, 1×10 １７ spins / cm ３ The above composite material can be used for the layer 105X.

[0303] [Organic Compound Having an Unshared Electron Pair] For example, a material having electron transport properties can be used as the organic compound having an unshared electron pair. For example, a compound having an electron-deficient heteroaromatic ring can be used. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and a triazine ring can be used. This can reduce the driving voltage of the light-emitting device 550X.

[0304] The LUMO level of the organic compound having an unshared electron pair is preferably −3.6 eV or more and −2.3 eV or less. Generally, the HOMO level and LUMO level of an organic compound can be estimated by CV (cyclic voltammetry), photoelectron spectroscopy, optical absorption spectroscopy, inverse photoelectron spectroscopy, or the like.

[0305] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviation: BPhen), 2,9-di(naphphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviation: HATNA), 2,4,6-tris(3'-(pyridin-3-yl)biphenyl-3-yl)-1,3,5-triazine (abbreviation: TmPPPyTz), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), etc. can be used as the organic compound having an unshared electron pair. Note that NBPhen has a higher glass transition temperature (Tg) and is more heat resistant than BPhen.

[0306] Furthermore, for example, copper phthalocyanine, which has an odd number of electrons, can be used as the organic compound having an unshared electron pair.

[0307] [First Metal] For example, when the number of electrons in the first organic compound having an unshared electron pair is even, a composite material of the first metal and the first organic compound that belong to an odd-numbered group in the periodic table can be used for the layer 105X.

[0308] For example, manganese (Mn), a Group 7 metal; cobalt (Co), a Group 9 metal; copper (Cu), silver (Ag), and gold (Au), which are Group 11 metals; and aluminum (Al) and indium (In), which are Group 13 metals, are odd-numbered groups in the periodic table. The elements of Group 11 have lower melting points than the elements of Groups 7 and 9, making them suitable for vacuum deposition. Ag, in particular, is preferred due to its low melting point. Furthermore, by using a metal with poor reactivity with water or oxygen as the first metal, the moisture resistance of the light-emitting device 550X can be improved.

[0309] By using Ag for the electrode 552X and the layer 105X, the adhesion between the layer 105X and the electrode 552X can be improved.

[0310] When the number of electrons in the first organic compound having an unshared electron pair is odd, a composite material of the first metal and the first organic compound that belong to an even group in the periodic table can be used for the layer 105X. For example, iron (Fe), which is a metal in Group 8 of the periodic table, belongs to an even group in the periodic table.

[0311] [Electride] For example, a substance in which electrons are added to a mixed oxide of calcium and aluminum at a high concentration can be used as a material having electron injection properties.

[0312] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0313] Embodiment 7 In this embodiment, a structure of a light-emitting device that can be used for a display device of one embodiment of the present invention will be described with reference to FIG. 9A.

[0314] FIG. 9A is a cross-sectional view illustrating a structure of a light-emitting device according to one embodiment of the present invention.

[0315] The structure of the light-emitting device 550X described in this embodiment can be used in the display device of one embodiment of the present invention. Note that the description of the structure of the light-emitting device 550X can be applied to the light-emitting device 550A. Specifically, the symbol "X" used in the structure of the light-emitting device 550X can be replaced with "A" and the description of the light-emitting device 550A can be used. Similarly, the symbol "X" can be replaced with "B" or "C" and the structure of the light-emitting device 550X can be applied to the light-emitting device 550B or the light-emitting device 550C.

[0316] <Configuration Example of Light-Emitting Device 550X> Furthermore, a light-emitting device 550X described in this embodiment includes an electrode 551X, an electrode 552X, a unit 103X, and an intermediate layer 106X (see FIG. 9A).

[0317] The electrode 552X has an area overlapping with the electrode 551X, and the unit 103X has an area sandwiched between the electrode 551X and the electrode 552X. The intermediate layer 106X has an area sandwiched between the electrode 552X and the unit 103X.

[0318] <<Configuration Example 1 of Intermediate Layer 106X>> The intermediate layer 106X has a function of supplying electrons to the anode side and holes to the cathode side when a voltage is applied. The intermediate layer 106X can also be called a charge generation layer.

[0319] For example, the intermediate layer 106X can be formed using a material having a hole-injecting property that can be used for the layer 104X described in Embodiment 5. Specifically, the intermediate layer 106X can be formed using an electron-accepting material or a composite material.

[0320] Furthermore, for example, a stacked film in which a film containing the composite material and a film containing a material having a hole-transporting property are stacked can be used for the intermediate layer 106X. Note that the film containing the material having a hole-transporting property is sandwiched between the film containing the composite material and the cathode.

[0321] <<Configuration Example 2 of Intermediate Layer 106X>> A laminated film in which a layer 106X1 and a layer 106X2 are stacked can be used for the intermediate layer 106X. The layer 106X1 has a region sandwiched between the unit 103X and the electrode 552X, and the layer 106X2 has a region sandwiched between the unit 103X and the layer 106X1.

[0322] <Structural Example of Layer 106X1> For example, the material having a hole-injecting property that can be used for the layer 104X described in Embodiment 5 can be used for the layer 106X1. Specifically, an electron-accepting material or a composite material can be used for the layer 106X1. ４ Ω・cm or more 1×10 ７ A film having an electrical resistivity of 5×10 Ω·cm or less can be used for the layer 106X1. ４ Ω・cm or more 1×10 ７ It has an electrical resistivity of Ω cm or less, and more preferably, 1×10 ５ Ω・cm or more 1×10 ７ It has an electrical resistivity of Ω·cm or less.

[0323] <Structure Example of Layer 106X2> For example, the material that can be used for the layer 105X described in Embodiment 6 can be used for the layer 106X2.

[0324] <<Structure Example 3 of Intermediate Layer 106X>> A stacked film formed by stacking layers 106X1, 106X2, and 106X3 can be used as the intermediate layer 106X. The layer 106X3 has a region sandwiched between the layers 106X1 and 106X2.

[0325] <<Configuration Example of Layer 106X3>> For example, a material having electron transport properties can be used for the layer 106X3. The layer 106X3 can also be referred to as an electron relay layer. By using the layer 106X3, the layer in contact with the anode side of the layer 106X3 can be separated from the layer in contact with the cathode side of the layer 106X3. The interaction between the layer in contact with the anode side of the layer 106X3 and the layer in contact with the cathode side of the layer 106X3 can be reduced. Electrons can be smoothly supplied to the layer in contact with the anode side of the layer 106X3.

[0326] A substance having a LUMO level between the LUMO level of the electron-accepting substance contained in the layer 106X1 and the LUMO level of the substance contained in the layer 106X2 can be suitably used for the layer 106X3.

[0327] For example, a material having a LUMO level in the range of −5.0 eV or more, preferably −5.0 eV or more and −3.0 eV or less, can be used for the layer 106X3.

[0328] Specifically, the layer 106X3 may be made of a phthalocyanine-based material, such as phthalocyanine (abbreviated as HPc), copper (II) phthalocyanine (abbreviated as CuPc), zinc phthalocyanine (abbreviated as ZnPc), or a metal complex having a metal-oxygen bond and an aromatic ligand.

[0329] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0330] Embodiment 8 In this embodiment, a structure of a light-emitting device 550X that can be used for a display device of one embodiment of the present invention will be described with reference to FIG. 9B.

[0331] FIG. 9B is a cross-sectional view illustrating a structure of a light-emitting device according to one embodiment of the present invention, which has a structure different from that illustrated in FIG. 9A.

[0332] The structure of the light-emitting device 550X described in this embodiment can be used in the display device of one embodiment of the present invention. Note that the description of the structure of the light-emitting device 550X can be applied to the light-emitting device 550A. Specifically, the symbol "X" used in the structure of the light-emitting device 550X can be replaced with "A" and the description of the light-emitting device 550A can be used. Similarly, the symbol "X" can be replaced with "B" or "C" and the structure of the light-emitting device 550X can be applied to the light-emitting device 550B or the light-emitting device 550C.

[0333] <Configuration Example of Light-Emitting Device 550X> A light-emitting device 550X described in this embodiment includes an electrode 551X, an electrode 552X, a unit 103X, an intermediate layer 106X, and a unit 103X2 (see FIG. 9B).

[0334] The unit 103X is sandwiched between the electrode 552X and the electrode 551X, and the intermediate layer 106X is sandwiched between the electrode 552X and the unit 103X.

[0335] The unit 103X2 is sandwiched between the electrode 552X and the intermediate layer 106X. The unit 103X2 has a function of emitting light ELX2.

[0336] In other words, the light-emitting device 550X has a plurality of stacked units between the electrode 551X and the electrode 552X. The number of stacked units is not limited to two, and three or more units may be stacked. A configuration including a plurality of stacked units sandwiched between the electrode 551X and the electrode 552X and an intermediate layer 106X sandwiched between the plurality of units may be referred to as a stacked light-emitting device or a tandem light-emitting device.

[0337] This allows for high-luminance light emission while maintaining a low current density, improves reliability, reduces the driving voltage compared to the same luminance, and reduces power consumption.

[0338] <<Configuration Example 1 of Unit 103X2>> The unit 103X2 has a single-layer structure or a laminated structure. For example, the unit 103X2 includes a layer 111X2, a layer 112X2, and a layer 113X2. The unit 103X2 has a function of emitting light ELX2.

[0339] Layer 111X2 is sandwiched between layer 112X2 and layer 113X2, layer 113X2 is sandwiched between electrode 552X and layer 111X2, and layer 112X2 is sandwiched between layer 111X2 and intermediate layer 106X.

[0340] The configuration that can be used for the unit 103X can be used for the unit 103X2. Specifically, the "X" in the reference numeral used in the configuration of the unit 103X can be replaced with "X2" and can be used in the description of the unit 103X2. For example, the same configuration as the unit 103X can be used for the unit 103X2.

[0341] <<Configuration Example 2 of Unit 103X2>> Furthermore, a configuration different from that of the unit 103X can be used for the unit 103X2. For example, a configuration that emits light having a different hue from the emission color of the unit 103X can be used for the unit 103X2.

[0342] Specifically, a unit 103X that emits red light and green light and a unit 103X2 that emits blue light can be stacked together to provide a light-emitting device that emits light of a desired color, such as a light-emitting device that emits white light.

[0343] The intermediate layer 106X has a function of supplying electrons to one of the unit 103X and the unit 103X2 and supplying holes to the other. For example, the intermediate layer 106X described in Embodiment 7 can be used.

[0344] <Method for manufacturing the light-emitting device 550X> For example, the electrode 551X, the electrode 552X, the unit 103X, the intermediate layer 106X, and the unit 103X2 can be formed by using a dry method, a wet method, a vapor deposition method, a droplet discharge method, a coating method, a printing method, etc. Different methods can be used to form each component.

[0345] Specifically, the light-emitting device 550X can be produced using a vacuum deposition device, an inkjet device, a coating device such as a spin coater, a gravure printing device, an offset printing device, a screen printing device, or the like.

[0346] For example, an electrode can be formed by a wet method using a paste of a metal material or a sol-gel method. Also, an indium oxide-zinc oxide film can be formed by a sputtering method using a target containing 1 wt % to 20 wt % of zinc oxide added to indium oxide. Also, an indium oxide (IWZO) film containing tungsten oxide and zinc oxide can be formed by a sputtering method using a target containing 0.5 wt % to 5 wt % of tungsten oxide and 0.1 wt % to 1 wt % of zinc oxide added to indium oxide.

[0347] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0348] Embodiment 9 In this embodiment, a manufacturing method of a display device according to one embodiment of the present invention will be described with reference to FIGS.

[0349] 10A to 10C illustrate a method for manufacturing a display device according to one embodiment of the present invention.

[0350] 11A to 11C illustrate a method for manufacturing a display device according to one embodiment of the present invention.

[0351] 12A to 12C illustrate a method for manufacturing a display device according to one embodiment of the present invention.

[0352] 13A to 13C illustrate a method for manufacturing a display device according to one embodiment of the present invention.

[0353] 14A to 14C illustrate a method for manufacturing a display device according to one embodiment of the present invention.

[0354] 15A to 15C illustrate a method for manufacturing a display device according to one embodiment of the present invention.

[0355] 17A to 17C illustrate a method for manufacturing a display device according to one embodiment of the present invention.

[0356] 18A to 18C illustrate a method for manufacturing a display device according to one embodiment of the present invention.

[0357] 19A to 19C illustrate a method for manufacturing a display device according to one embodiment of the present invention.

[0358] 20A to 20C illustrate a method for manufacturing a display device according to one embodiment of the present invention.

[0359] 21A to 21C illustrate a method for manufacturing a display device according to one embodiment of the present invention.

[0360] 22A to 22C illustrate a method for manufacturing a display device according to one embodiment of the present invention.

[0361] 23A to 23C illustrate a method for manufacturing a display device according to one embodiment of the present invention.

[0362] <Manufacturing Method of Display Device 700> A manufacturing method of a display device described in this embodiment includes the following steps.

[0363] The first and second steps are steps for stacking films that will later become the reflective film REFA, the reflective film REFB, the reflective film REFC, the electrodes 551A, 551B, and 551C.

[0364] Steps 3-1 to 3-6 are steps for stacking films that will later become layer 104A, unit 103A, layer 106A2, layer 106A3, layer 106A1, and unit 103A2, and steps 4-1 and 4-2 are steps for stacking films that will later become layer SCRA2 and layer SCRA1 (see FIG. 11 ). Note that the methods for fabricating light-emitting device 550A, light-emitting device 550B, and light-emitting device 550C include common steps in steps 3-1 to 4-2.

[0365] Method of Fabricating Light-Emitting Device 550A Light-emitting device 550A can be fabricated using a method having the following steps.

[0366] [First Step] In the first step, a reflective film REF is formed on the insulating layer 521 (see FIG. 10 ). Specifically, a conductive film is stacked. For example, a stacked film in which titanium, aluminum, and titanium are stacked in this order can be used for the reflective film REF. Note that the conductive film can be formed by, for example, sputtering.

[0367] [Second Step] In the second step, a conductive film 551 is formed on the reflective film REF (see FIG. 10). Specifically, a light-transmitting conductive film is formed.

[0368] Next, the workpiece on which the electrodes are formed is washed with water, and −４ The mixture is introduced into a vacuum deposition apparatus whose internal pressure has been reduced to about Pa, and is subjected to vacuum baking in a heating chamber within the vacuum deposition apparatus. Thereafter, the mixture is allowed to cool.

[0369] [Step 3-1] In Step 3-1, a film 104a, which will later become the layer 104A, is formed on the conductive film 551 (see FIG. 11). For example, a material is evaporated by using a resistance heating method.

[0370] [Step 3-2] In step 3-2, a laminated film 103a, which will later become the unit 103A, is formed on the film 104a (see FIG. 11). For example, a material is evaporated using a resistance heating method.

[0371] [Step 3-3] In step 3-3, a film 106a2, which will later become the layer 106A2, is formed on the laminated film 103a (see FIG. 11). For example, a material is evaporated using a resistance heating method.

[0372] [Step 3-4] In step 3-4, a film 106a3, which will later become the layer 106A3, is formed on the layer 106a2 (see FIG. 11). For example, a material is evaporated using a resistance heating method.

[0373] [Step 3-5] In step 3-5, a film 106a1, which will later become the layer 106A1, is formed on the layer 106a3 (see FIG. 11). For example, a material is evaporated using a resistance heating method.

[0374] [Step 3-6] In step 3-6, a laminated film 103a2, which will later become the unit 103A2, is formed on the layer 106a1 (see FIG. 11). For example, a material is evaporated using a resistance heating method.

[0375] [Step 4-1] In step 4-1, a film SCRa2, which will later become the layer SCRA2, is formed on the laminated film 103a2 (see FIG. 11 ). This makes it possible to prevent the occurrence of problems such as alteration of components contained in the laminated film 103a when the film SCRa1 is formed in step 4-2.

[0376] Furthermore, in step 7-3 described below, a material that can be used for the film SCRa2 by etching to remove unnecessary portions can be used. Specifically, a film containing an organic compound can be used for the film SCRa2. For example, the material can be evaporated using a resistance heating method. Specifically, a film containing tris(8-quinolinolato)aluminum(III) (abbreviation: Alq3) can be used for the film SCRa2.

[0377] [Step 4-2] In step 4-2, a film SCRa1 is formed on the film SCRa2 using a plasma-enhanced atomic layer deposition (PEALD) method (see FIG. 11). The film formed using the PEALD method is extremely thin and dense, which can improve the aperture ratio of the light-emitting device. It can also be used as a sealing film when the distance between light-emitting devices is narrowed. For example, plasma generated using a 13.5 MHz high-frequency power source is preferred. Furthermore, using inductively coupled plasma (ICP) can prevent problems such as alteration of the components contained in the stacked film 103a.

[0378] Specifically, the workpiece on which the film SRCa2 has been formed is removed from the vacuum deposition apparatus and introduced into an atomic layer deposition (ALD) deposition apparatus, where the material is deposited by ALD. For example, the deposition temperature is controlled to 150° C. or less, preferably 120° C. or less, and more preferably 100° C. or less to prevent the components contained in the stacked film 103a from being altered.

[0379] For example, a film containing silicon and nitrogen can be used for the film SCRa1, which can be processed into a predetermined shape using a dry etching method.

[0380] The film formation conditions are as follows: a material gas (precursor) is supplied for a predetermined period of time and then stopped, plasma is then applied for a predetermined period of time to cause the material gas to react, and then the plasma is stopped. In other words, the period during which the material gas is supplied and the period during which the plasma is applied are not overlapped. Furthermore, the period from when the material gas is supplied to when the plasma application is completed is considered to be one cycle, and the number of cycles is set to obtain the required film thickness based on the film thickness formed in one cycle. Note that a reactive gas and a carrier gas are supplied into the chamber separately from the material gas (precursor), and the type of film obtained can be varied by using different reactive gases. For example, in the case of silicon oxide, a gas containing oxygen (N ２ O, O ２ In the case of silicon nitride, a nitrogen-containing gas (N ２ , N.H. ３ etc.)

[0381] This allows the film SCR a1 to be a film with few pinholes, a film with a high coverage, or a dense film. Furthermore, in step 5-1, a resist solution containing a solvent and a photosensitive polymer can be used to form the resist RES. Furthermore, the occurrence of a phenomenon in which the solvent that has permeated the pinholes reaches the laminated film 103 a 2 and alters or dissolves the components contained in the laminated film 103 a 2 can be suppressed. As a result, a novel method for manufacturing a display device that is excellent in convenience, usefulness, and reliability can be provided.

[0382] Furthermore, in step 5-2 described later, when an etching gas containing oxygen and a dry etching method are used, the film can function as a hard mask.

[0383] Preferably, steps 3-1 to 4-2 are performed consecutively without exposing the workpiece to the atmosphere. For example, a reduced-pressure transfer chamber or a transfer chamber filled with a gas having a controlled impurity concentration is used to connect the processing chambers. This reduces impurities from a clean room or the like that are mixed into the light-emitting device during the manufacturing process. Furthermore, it is possible to suppress the phenomenon of impurities impairing reliability. As a result, a novel method for manufacturing a display device that is highly convenient, useful, and reliable can be provided.

[0384] Furthermore, when the film SCRa1 is formed in situ using PEALD, the workpiece can be handled without exposing the laminated film 103a2 to the atmosphere, thereby preventing oxygen or moisture from adhering to the laminated film 103a2, etc.

[0385] Since the film SCRa2 is in contact with the laminated film 103a2, a silicon nitride film is preferable to a film containing oxygen. Also, the ICP method is preferable to reduce the influence of plasma on the laminated film 103a2.

[0386] Alternatively, a film formed by a thermal ALD method can be used for the film SCRa2. Specifically, aluminum oxide having a thickness of 1 nm to 5 nm can be used for the film SCRa2. When the thermal ALD method is used, a silicon nitride or silicon oxide film can be used for the film SCRa1.

[0387] [Step 5-1] In step 5-1, the film SCRa1 is removed from the region that will later become the electrode 551B using an etching method, and a layer SCRA1 that overlaps the region that will later become the electrode 551A is formed (see FIG. 12). For example, a resist RES is formed using a resist solution containing a solvent and a photosensitive polymer and a photolithography method, and the layer SCRA1 is formed using the resist RES and an etching method. Specifically, a dry etching method can be used.

[0388] [Step 5-2] In step 5-2, using layer SCRA1 and an etching method, film SCRa2, stacked film 103a2, film 106a1, film 106a3, film 106a2, stacked film 103a, and film 104a are removed from above the area that will later become electrode 551B, and layer SCRA2, unit 103A, layer 106A1, layer 106A3, layer 106A2, unit 103A, and layer 104A are formed that overlap the area that will later become electrode 551A (see Figure 13). In other words, the film 104a is processed into the layer 104A, the stacked film 103a is processed into the unit 103A, the film 106a2 is processed into the layer 106A2, the film 106a3 is processed into the layer 106A3, the film 106a1 is processed into the layer 106A1, and the film SCRa2 is processed into the layer SCRA2.

[0389] For example, a dry etching method can be used. Specifically, a gas containing oxygen can be used as an etching gas. The layer SCRA1 functions as a hard mask.

[0390] After step 5-2 is completed, the workpiece has been formed with the structure of light-emitting device 550A, from layer 104A to unit 103A2, and layers SCRA2 and SCRA1 are formed on unit 103A2. Furthermore, the regions that will later become electrodes 551B and 551C are left exposed. The workpiece that has completed step 5-2 can be called a work in progress.

[0391] If the area that will later become electrode 551B is exposed in the workpiece, light-emitting device 550B can be fabricated on the area that will later become electrode 551B. Similarly, if the area that will later become electrode 551C is exposed in the workpiece, light-emitting device 550C can be fabricated on the area that will later become electrode 551C. In this case, after completing step 5-2, the workpiece is −４The resulting mixture is introduced into a vacuum deposition apparatus whose internal pressure has been reduced to approximately Pa, and the process proceeds to step 3-1 of the method for fabricating light-emitting device 550B to fabricate light-emitting device 550B. Alternatively, the process proceeds to step 3-1 of the method for fabricating light-emitting device 550C to fabricate light-emitting device 550C. If fabrication of light-emitting device 550A is to be continued without fabricating light-emitting device 550B or light-emitting device 550C, the process proceeds to step 6.

[0392] [Sixth Step] In the sixth step, the electrode 551A and the reflective film REFA are formed (see FIG. 18). Specifically, the conductive film 551 is processed into a predetermined shape using the layer SCRA1 and an etching method to form the electrode 551A. Also, the reflective film REF is processed into a predetermined shape using the layer SCRA1 and an etching method to form the reflective film REFA.

[0393] For example, when the conductive film 551 is processed using an isotropic etching method, the outer shape of the side end of the electrode 551A is formed inside the outer shape of the side end of the layer 104A.

[0394] Furthermore, when the reflective film REFA is processed into a predetermined shape, a recess may be formed in part of the insulating layer 521 .

[0395] When the work-in-progress includes the layer SCRB1, the electrode 551B and the reflective film REFB are formed using the layer SCRB1 and an etching method.

[0396] Furthermore, when the work-in-progress includes the layer SCRC1, the electrode 551C and the reflective film REFC are formed using the layer SCRC1 and an etching method.

[0397] [Step 7-1] In step 7-1, an insulating film that will later become the insulating layer 529 is formed (see FIG. 19 ). Specifically, the insulating film that will later become the insulating layer 529 is formed so as to cover the upper surface of the layer SCRA1 and the side surfaces of the unit 103A2, the layer 106A1, the layer 106A3, the layer 106A2, the unit 103A, the layer 104A, the electrode 551A, and the reflective film REFA. For example, a silicon-containing film having a thickness of 5 nm to 50 nm, preferably 5 nm to 30 nm, more preferably 5 nm to 20 nm, can be used. Specifically, a film containing silicon and nitrogen can be formed using the PEALD method. For example, a silicon-containing film can be formed using the method described in step 4-2.

[0398] [Step 7-2] In step 7-2, the insulating layer 529 and the layer SCRA1, layer SCRB1, and layer SCRC1 are formed into a predetermined shape (see FIG. 20 ). Specifically, using resist RES and an etching method, openings overlapping with the electrode 551A, the electrode 551B, and the electrode 551C are formed in the insulating layer 529 and the layer SCRA1, layer SCRB1, and layer SCRC1. For example, a dry etching method can be used.

[0399] [Step 7-3] In step 7-3, the layer SCRA2 is formed into a predetermined shape (see FIG. 21). Specifically, the layer SCRA2 is formed into a predetermined shape using the insulating layer 529 and an etching method. This exposes the unit 103A2 in the opening.

[0400] If the work-in-progress includes layers SCRA2, SCRB2, and SCRC2, in step 7-3, the layers SCRA2, SCRB2, and SCRC2 are formed into a predetermined shape, thereby exposing units 103A2, 103A2, and 103A2 at the opening.

[0401] The workpiece is then −４ The mixture is introduced into a vacuum deposition apparatus whose inside is reduced in pressure to about Pa, and is then vacuum baked in a heating chamber within the vacuum deposition apparatus.

[0402] [Step 8-1] In step 8-1, a layer 105 is formed on the unit 103A2 (see FIG. 22). For example, a material is evaporated using a resistance heating method.

[0403] [Step 8-2] In step 8-2, a conductive layer 552 is formed on the layer 105 (see FIG. 22). For example, a material is evaporated using a resistance heating method.

[0404] [Ninth Step] In the ninth step, an insulating layer 573 is formed on the conductive layer 552 (see FIG. 23 ). For example, a film containing silicon and nitrogen having a thickness of 5 nm to 50 nm, preferably 5 nm to 30 nm, and more preferably 5 nm to 20 nm can be used. Specifically, a film containing silicon and nitrogen can be formed using the PEALD method. For example, a film containing silicon can be formed using the method described in step 4-2. For example, by suppressing the film formation temperature to 150° C. or less, preferably 120° C. or less, and more preferably 100° C. or less, a sealing structure can be formed without causing thermal damage to the light-emitting device.

[0405] <<Method for Fabricating Light-Emitting Device 550B>> The light-emitting device 550B can be fabricated using a method including the following steps. Specifically, the light-emitting device 550B can be fabricated using a method similar to the first to ninth steps of the light-emitting device 550A.

[0406] The method for fabricating light-emitting device 550B differs from the method for fabricating light-emitting device 550A in that a workpiece of light-emitting device 550A in process is used as the workpiece in step 3-1 (see FIG. 13 ). Specifically, the workpiece includes reflective film REF and conductive film 551. Layer 104A, unit 103A, layers 106A2, 106A3, 106A1, layers SCRA1, and SCRA2 are formed on an area of ​​conductive film 551 that will later become electrode 551A.

[0407] Furthermore, the method for fabricating light-emitting device 550B differs from the method for fabricating light-emitting device 550A in that the materials and thicknesses used for unit 103B and unit 103B2 are different. Here, the differences will be described in detail, and for parts that use similar methods, the symbols "a" and "A" used in the description of the method for fabricating light-emitting device 550A will be replaced with "b" and "B," respectively, and the same will be used in the description of the method for fabricating light-emitting device 550B.

[0408] [Step 3-1] In the fourth step, a film 104b that will later become the layer 104B is formed on the region that will later become the electrode 551B (see FIG. 14). For example, a material is evaporated using a resistance heating method.

[0409] [Step 3-2] In step 3-2, a laminated film 103b, which will later become the unit 103B, is formed on the film 104b (see FIG. 14). For example, a material is evaporated using a resistance heating method.

[0410] [Step 3-3] In step 3-3, a film 106b2, which will later become the layer 106B2, is formed on the laminated film 103b (see FIG. 14). For example, a material is evaporated using a resistance heating method.

[0411] [Step 3-4] In step 3-4, a film 106b3, which will later become the layer 106B3, is formed on the layer 106b2 (see FIG. 14). For example, a material is evaporated using a resistance heating method.

[0412] [Step 3-5] In step 3-5, a film 106b1, which will later become the layer 106B1, is formed on the layer 106b3 (see FIG. 14). For example, a material is evaporated using a resistance heating method.

[0413] [Step 3-6] In step 3-6, a laminated film 103b2, which will later become the unit 103B2, is formed on the layer 106b1 (see FIG. 14). For example, a material is evaporated using a resistance heating method.

[0414] [Step 4-1] In step 4-1, a film SCRb2, which will later become the layer SCRB2, is formed on the laminated film 103b2 (see FIG. 14). This makes it possible to prevent the occurrence of problems such as deterioration of components contained in the laminated film 103b when forming the film SCRb1 in step 4-2.

[0415] Furthermore, in the subsequent step 7-3, a material from which unnecessary portions can be removed using an etching method can be used for the film SCRb2. Specifically, a film containing an organic compound can be used for the film SCRb2. For example, the material can be evaporated using a resistance heating method. Specifically, a film containing tris(8-quinolinolato)aluminum(III) (abbreviation: Alq3) can be used for the film SCRb2.

[0416] [Step 4-2] In step 4-2, the film SCRb1 is formed on the film SCRb2 by using the PEALD method (see FIG. 14).

[0417] Specifically, the workpiece on which the film SRCb2 has been formed is removed from the vacuum deposition apparatus and introduced into an atomic layer deposition film formation apparatus, where a material film is formed by atomic layer deposition.

[0418] [Step 5-1] In step 5-1, the film SCRb1 is removed from above the region that will later become electrode 551A using an etching method, and a layer SCRB1 is formed that overlaps with the region that will later become electrode 551B (see FIG. 14). For example, a resist RES is formed using a resist solution containing a solvent and a photosensitive polymer and a photolithography method, and the layer SCRB1 is formed using the resist RES and an etching method. Specifically, a dry etching method can be used.

[0419] [Step 5-2] In step 5-2, using layer SCRB1 and an etching method, film SCRb2, stacked film 103b2, film 106b1, film 106b3, film 106b2, stacked film 103b, and film 104b are removed from above the region that will later become electrode 551A, and layer SCRB2, unit 103B, layer 106B1, layer 106B3, layer 106B2, unit 103B, and layer 104B are formed that overlap the region that will later become electrode 551B (see Figure 15). In other words, the film 104b is processed into the layer 104B, the stacked film 103b is processed into the unit 103B, the film 106b2 is processed into the layer 106B2, the film 106b3 is processed into the layer 106B3, the film 106b1 is processed into the layer 106B1, and the film SCRb2 is processed into the layer SCRB2.

[0420] For example, a dry etching method can be used. Specifically, a gas containing oxygen can be used as an etching gas. The layer SCRB1 functions as a hard mask.

[0421] After step 5-2 is completed, the workpiece has the structure of light-emitting device 550B, from layer 104B to unit 103B2, with layers SCRB2 and SCRB1 formed on unit 103B2. The area that will later become electrode 551C is left exposed. The workpiece after step 5-2 can be called a work in progress.

[0422] If the area that will later become the electrode 551C is exposed in the workpiece, a light-emitting device 550C can be fabricated on the area that will later become the electrode 551C. In this case, after completing step 5-2, the workpiece is −４ The resulting mixture is introduced into a vacuum deposition apparatus whose internal pressure has been reduced to approximately Pa, and the process proceeds to step 3-1 of the method for fabricating light-emitting device C to fabricate light-emitting device 550C. If the fabrication of light-emitting device 550B is to be continued without fabricating light-emitting device 550C, the process proceeds to step 6 of the method for fabricating light-emitting device A.

[0423] <<Method for Fabricating Light-Emitting Device 550C>> The light-emitting device 550C can be fabricated using a method including the following steps. Specifically, the light-emitting device 550C can be fabricated using a method similar to the first to ninth steps of the light-emitting device 550A.

[0424] The method for fabricating light-emitting device 550C differs from the method for fabricating light-emitting device 550A in that a workpiece of light-emitting device 550B in process is used as the workpiece in step 3-1 (see FIG. 15 ). Specifically, the workpiece includes a reflective film REF and a conductive film 551. Layer 104A, unit 103A, layers 106A2, 106A3, 106A1, layers SCRA1, and SCRA2 are formed on the region of conductive film 551 that will eventually become electrode 551A. Layer 104B, unit 103B, layers 106B2, 106B3, 106B1, layers SCRB1, and layers SCRB2 are formed on the region of conductive film 551 that will eventually become electrode 551B.

[0425] Furthermore, the method for fabricating light-emitting device 550C differs from the method for fabricating light-emitting device 550A in that the materials and thicknesses used for units 103C and 103C2 are different. Here, the differences will be described in detail, and for parts that use similar methods, the symbols "a" and "A" used in the description of the method for fabricating light-emitting device 550A will be replaced with "c" and "C," respectively, and the same will be used in the description of the method for fabricating light-emitting device 550C.

[0426] [Step 3-1] In the fourth step, a film 104c that will later become the layer 104C is formed on the region that will later become the electrode 551C (see FIG. 16). For example, a material is evaporated using a resistance heating method.

[0427] [Step 3-2] In step 3-2, a laminated film 103c, which will later become the unit 103C, is formed on the film 104c (see FIG. 16). For example, a material is evaporated using a resistance heating method.

[0428] [Step 3-3] In step 3-3, a film 106c2, which will later become the layer 106C2, is formed on the stacked film 103c (see FIG. 16). For example, a material is evaporated using a resistance heating method.

[0429] [Step 3-4] In step 3-4, a film 106c3, which will later become the layer 106C3, is formed on the layer 106c2 (see FIG. 16). For example, a material is evaporated using a resistance heating method.

[0430] [Step 3-5] In step 3-5, a film 106c1, which will later become the layer 106C1, is formed on the layer 106c3 (see FIG. 16). For example, a material is evaporated using a resistance heating method.

[0431] [Step 3-6] In step 3-6, a stacked film 103c2, which will later become the unit 103C2, is formed on the layer 106c1 (see FIG. 16). For example, a material is evaporated using a resistance heating method.

[0432] [Step 4-1] In step 4-1, a film SCRc2, which will later become the layer SCRC2, is formed on the laminated film 103c2 (see FIG. 16 ). This makes it possible to prevent the occurrence of problems such as alteration of components contained in the laminated film 103c when the film SCRc1 is formed in step 4-2.

[0433] Furthermore, in the subsequent step 7-3, a material from which unnecessary portions can be removed using an etching method can be used for the film SCRc2. Specifically, a film containing an organic compound can be used for the film SCRc2. For example, the material can be evaporated using a resistance heating method. Specifically, a film containing tris(8-quinolinolato)aluminum(III) (abbreviation: Alq3) can be used for the film SCRc2.

[0434] [Step 4-2] In step 4-2, the film SCRc1 is formed on the film SCRc2 by using the PEALD method (see FIG. 16).

[0435] Specifically, the workpiece on which the film SRc2 has been formed is removed from the vacuum deposition apparatus and introduced into an atomic layer deposition film formation apparatus, where a film of material is formed using atomic layer deposition.

[0436] [Step 5-1] In step 5-1, the film SCRc1 is removed from the region that will later become the electrode 551A by etching, and a layer SCRC1 is formed that overlaps the region that will later become the electrode 551C (see FIG. 16 ). For example, a resist RES is formed using a resist solution containing a solvent and a photosensitive polymer and a photolithography method, and the layer SCRB1 is formed using the resist RES and an etching method. Specifically, a dry etching method can be used.

[0437] [Step 5-2] In step 5-2, using layer SCRC1 and an etching method, film SCRc2, stacked film 103c2, film 106c1, film 106c3, film 106c2, stacked film 103c, and film 104c are removed from above the region that will later become electrode 551A, and layer SCRC2, unit 103C, layer 106C1, layer 106C3, layer 106C2, unit 103C, and layer 104C are formed that overlap the region that will later become electrode 551C (see Figure 17). In other words, the film 104c is processed into the layer 104C, the stacked film 103c is processed into the unit 103C, the film 106c2 is processed into the layer 106C2, the film 106c3 is processed into the layer 106C3, the film 106c1 is processed into the layer 106C1, and the film SCRc2 is processed into the layer SCRC2.

[0438] For example, a dry etching method can be used. Specifically, a gas containing oxygen can be used as an etching gas. The layer SCRC1 functions as a hard mask.

[0439] After step 5-2 is completed, the workpiece has the structure of the light-emitting device 550C, from the layer 104C to the unit 103C2, and the layer SCRC2 and the layer SCRC1 are formed on the unit 103C2. Note that the workpiece after step 5-2 can be called a work in progress. If the fabrication of the light-emitting device 550C is to continue, proceed to step 6 of the fabrication method for the light-emitting device A.

[0440] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0441] Embodiment 10 In this embodiment, a display module according to one embodiment of the present invention will be described.

[0442] <Display Module> FIG. 24 is a perspective view illustrating the configuration of the display module 280. As shown in FIG.

[0443] The display module 280 includes the display device 100 and an FPC 290 or a connector. The display device 100 includes a display region 80. For example, the display device described in Embodiment 1 or 2 can be used as the display device 100.

[0444] The FPC 290 receives signals and power from an external source and supplies the signals and power to the display device 100. An IC may also be mounted on the FPC 290. A connector is a mechanical component that electrically connects conductors, and the conductors can electrically connect the display device 100 to a component to which it is connected. For example, the FPC 290 can be used as a conductor. The connector can also disconnect the display device 100 from the component to which it is connected.

[0445] 25A is a cross-sectional view illustrating the configuration of a display device 100A. For example, the display device 100A can be used in the display module 280. The substrate 301 corresponds to the substrate 71 in FIG.

[0446] Display device 100A includes substrate 301, transistor 310, element isolation layer 315, insulating layer 261, capacitor 240, insulating layer 255 (insulating layer 255a, insulating layer 255b, insulating layer 255c), light-emitting device 61R, light-emitting device 61G, and light-emitting device 61B. Insulating layer 261 is provided on substrate 301, and transistor 310 is located between substrate 301 and insulating layer 261. Insulating layer 255a is provided on insulating layer 261, capacitor 240 is located between insulating layer 261 and insulating layer 255a, and insulating layer 255a is located between light-emitting device 61R and capacitor 240, light-emitting device 61G and capacitor 240, and light-emitting device 61B and capacitor 240.

[0447] [Transistor 310] The transistor 310 has a conductive layer 311, a pair of low-resistance regions 312, an insulating layer 313, and an insulating layer 314, and forms a channel in a part of the substrate 301. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The substrate 301 has a pair of low-resistance regions 312 doped with impurities. Note that these regions function as a source and a drain. Side surfaces of the conductive layer 311 are covered with the insulating layer 314.

[0448] An isolation layer 315 is embedded in the substrate 301 and is located between two adjacent transistors 310 .

[0449] [Capacitor 240] Capacitor 240 has conductive layers 241, 245, and insulating layer 243, and insulating layer 243 is located between conductive layers 241 and 245. Conductive layer 241 functions as one electrode of capacitor 240, conductive layer 245 functions as the other electrode of capacitor 240, and insulating layer 243 functions as a dielectric of capacitor 240.

[0450] The conductive layer 241 is located on the insulating layer 261 and is buried in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and drain of the transistor 310 by a plug 275 buried in the insulating layer 261. The insulating layer 243 covers the conductive layer 241. The conductive layer 245 overlaps the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0451] [Insulating Layers 255a, 255b, and 255c] The display device 100A includes insulating layers 255a, 255b, and 255c, and the insulating layer 255b is located between the insulating layer 255a and the insulating layer 255c.

[0452] [Light-emitting device 61R, light-emitting device 61G, light-emitting device 61B] The light-emitting device 61R, light-emitting device 61G, and light-emitting device 61B are provided on the insulating layer 255c. For example, the light-emitting devices described in Embodiments 4 to 8 can be applied to the light-emitting device 61R, light-emitting device 61G, and light-emitting device 61B. The light-emitting device 61R emits light 81R, the light-emitting device 61G emits light 81G, and the light-emitting device 61B emits light 81B. The light-emitting devices also have a common layer 174.

[0453] The light-emitting device 61R has a conductive layer 171 and an EL layer 172R, and the EL layer 172R covers the upper and side surfaces of the conductive layer 171. The sacrificial layer 270 includes a sacrificial layer 270R, a sacrificial layer 270G, and a sacrificial layer 270B. The sacrificial layer 270R is located on the EL layer 172R. The light-emitting device 61G has a conductive layer 171 and an EL layer 172G, and the EL layer 172G covers the upper and side surfaces of the conductive layer 171. The sacrificial layer 270G is located on the EL layer 172G. The light-emitting device 61B has a conductive layer 171 and an EL layer 172B, and the EL layer 172B covers the upper and side surfaces of the conductive layer 171. The sacrificial layer 270B is located on the EL layer 172B.

[0454] The conductive layer 171 is electrically connected to one of the source and drain of the transistor 310 through a plug 256 embedded in the insulating layer 243, the insulating layer 255a, the insulating layer 255b, and the insulating layer 255c, the conductive layer 241 embedded in the insulating layer 254, and a plug 275 embedded in the insulating layer 261. The height of the top surface of the insulating layer 255c and the height of the top surface of the plug 256 are the same or approximately the same. Various conductive materials can be used for the plug.

[0455] [Protective Layer 271, Protective Layer 273, Adhesive Layer 122] The protective layer 271 is located between adjacent light-emitting devices, for example, the light-emitting device 61R and the light-emitting device 61G. In addition, a protective layer 273 is provided on the light-emitting device 61R, the light-emitting device 61G, and the light-emitting device 61B.

[0456] The adhesive layer 122 bonds the protective layer 273 and the substrate 120 together.

[0457] [Substrate 120] The substrate 120 corresponds to the substrate 73 in Fig. 24. For example, a light-shielding layer may be provided on the surface of the substrate 120 on the adhesive layer 122 side. Various optical members may also be disposed on the outside of the substrate 120.

[0458] A film can be used as the substrate. In particular, a film with low water absorption can be suitably used. For example, the water absorption is preferably 1% or less, more preferably 0.1% or less. This can suppress dimensional changes in the film, as well as the occurrence of wrinkles and the like. It can also suppress changes in the shape of the display device.

[0459] For example, a polarizing plate, a retardation plate, a light diffusing layer (for example, a diffusion film), an anti-reflection layer, a light collecting film, etc. can be used as the optical member.

[0460] A material with high optical isotropy, in other words, a material with low birefringence, can be used as the substrate, and a circularly polarizing plate can be superimposed on the display device. For example, a material with an absolute value of retardation (phase difference) value of 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less can be used as the substrate. For example, a triacetyl cellulose (TAC, also known as cellulose triacetate) film, a cycloolefin polymer (COP) film, a cycloolefin copolymer (COC) film, an acrylic resin film, etc. can be used as the film with high optical isotropy.

[0461] Furthermore, a surface protection layer such as an anti-static film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches during use, or an impact absorbing layer may be disposed on the outside of the substrate 120. For example, a glass layer or a silica layer (SiO ｘ layer), DLC (Diamond-Like Carbon), Aluminum Oxide (AlO ｘ ), polyester-based materials, polycarbonate-based materials, etc. can be used for the surface protective layer. Note that materials with high transmittance to visible light can be suitably used for the surface protective layer. Also, materials with high hardness can be suitably used for the surface protective layer.

[0462] 25B is a cross-sectional view illustrating the configuration of the display device 100B. The display device 100B can be used, for example, in the display device 100 of the display module 280 (see FIG. 24).

[0463] The display device 100B includes a substrate 301, a light-emitting device 61W, a capacitor 240, and a transistor 310. The light-emitting device 61W can emit, for example, white light.

[0464] The display device 100B also has colored layers 183R, 183G, and 183B. The colored layer 183R overlaps one light-emitting device 61W, the colored layer 183G overlaps another light-emitting device 61W, and the colored layer 183B overlaps yet another light-emitting device 61W. The display device 100B has a gap 276 between the light-emitting devices and the colored layers.

[0465] For example, the colored layer 183R can transmit red light, the colored layer 183G can transmit green light, and the colored layer 183B can transmit blue light.

[0466] <<Display Device 100C>> Figure 26 is a cross-sectional view illustrating the configuration of the display device 100C. The display device 100C can be used, for example, in the display device 100 of the display module 280 (see Figure 24). In the following description of the display device, descriptions of parts that are the same as those of the display devices described above may be omitted.

[0467] The display device 100C includes a substrate 301B and a substrate 301A. The display device 100C includes a transistor 310B, a capacitor 240, a light-emitting device 61R, a light-emitting device 61G, a light-emitting device 61B, and a transistor 310A. The transistor 310A forms a channel in a part of the substrate 301A, and the transistor 310B forms a channel in a part of the substrate 301B.

[0468] [Insulating Layer 345, Insulating Layer 346] Insulating layer 345 contacts the lower surface of substrate 301B, and insulating layer 346 is located on insulating layer 261. For example, an inorganic insulating film that can be used for protective layer 273 can be used for insulating layer 345 and insulating layer 346. Insulating layer 345 and insulating layer 346 function as protective layers and can suppress the phenomenon of impurities diffusing into substrate 301B and substrate 301A.

[0469] [Plug 343] The plug 343 penetrates the substrate 301B and the insulating layer 345. The insulating layer 344 covers the side surface of the plug 343. For example, the inorganic insulating film that can be used for the protective layer 273 can be used for the insulating layer 344. The insulating layer 344 functions as a protective layer and can suppress the phenomenon of impurities diffusing into the substrate 301B.

[0470] [Conductive Layer 342] The conductive layer 342 is located between the insulating layer 345 and the insulating layer 346. Preferably, the conductive layer 342 is embedded in the insulating layer 335, and the surface formed by the conductive layer 342 and the insulating layer 335 is flattened. The conductive layer 342 is electrically connected to the plug 343.

[0471] [Conductive Layer 341] The conductive layer 341 is located between the insulating layer 346 and the insulating layer 335. Preferably, the conductive layer 341 is embedded in the insulating layer 336, and the surface formed by the conductive layer 341 and the insulating layer 336 is flattened. The conductive layer 341 is bonded to the conductive layer 342. This electrically connects the substrate 301A to the substrate 301B.

[0472] The conductive layer 341 is preferably made of the same conductive material as the conductive layer 342. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film containing any of the above elements (e.g., a titanium nitride film, a molybdenum nitride film, or a tungsten nitride film) can be used. In particular, copper is preferably used for the conductive layers 341 and 342. This allows the application of Cu-Cu (copper-copper) direct bonding technology (technology for achieving electrical conductivity by connecting Cu (copper) pads together).

[0473] 27 is a cross-sectional view illustrating the configuration of a display device 100D. The display device 100D can be used, for example, in the display device 100 of a display module 280 (see FIG. 24).

[0474] The display device 100D has bumps 347, which join the conductive layers 341 and 342. The bumps 347 also electrically connect the conductive layers 341 and 342. For example, a conductive material containing gold (Au), nickel (Ni), indium (In), tin (Sn), or the like can be used for the bumps 347. For example, solder can also be used for the bumps 347.

[0475] The display device 100D also includes an adhesive layer 348. The adhesive layer 348 bonds the insulating layer 345 and the insulating layer 346 together.

[0476] <<Display Device 100E>> FIG. 28 is a cross-sectional view illustrating the configuration of the display device 100E. The display device 100E can be used, for example, in the display device 100 of the display module 280 (see FIG. 24). The substrate 331 corresponds to the substrate 71 in FIG. 24. An insulating substrate or a semiconductor substrate can be used for the substrate 331. The display device 100E includes a transistor 320. Note that the display device 100E differs from the display device 100A in that the transistor is an OS transistor. Note that in this specification and the like, the term "metal oxide" broadly refers to an oxide of a metal. Metal oxides are classified into oxide insulators, oxide conductors (including transparent oxide conductors), oxide semiconductors (also referred to as oxide semiconductors or simply as OS), and the like. For example, an OS FET or an OS transistor can be referred to as a transistor having an oxide or an oxide semiconductor in a semiconductor layer.

[0477] [Insulating Layer 332] The insulating layer 332 is provided over the substrate 331. For example, a film through which hydrogen or oxygen is less likely to diffuse than a silicon oxide film can be used for the insulating layer 332. Specifically, an aluminum oxide film, a hafnium oxide film, a silicon nitride film, or the like can be used for the insulating layer 332. This can prevent impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320. Furthermore, the insulating layer 332 can prevent oxygen from being released from the semiconductor layer 321 toward the insulating layer 332.

[0478] [Transistor 320 ] The transistor 320 includes a semiconductor layer 321 , an insulating layer 323 , a conductive layer 324 , a pair of conductive layers 325 , an insulating layer 326 , and a conductive layer 327 .

[0479] The conductive layer 327 is provided over the insulating layer 332 and functions as a first gate electrode of the transistor 320. The insulating layer 326 covers the conductive layer 327. Part of the insulating layer 326 functions as a first gate insulating layer. The insulating layer 326 includes an oxide insulating film at least in a region in contact with the semiconductor layer 321. Specifically, a silicon oxide film or the like is preferably used. The insulating layer 326 has a planarized top surface. The semiconductor layer 321 is provided over the insulating layer 326. A metal oxide film having semiconductor properties can be used for the semiconductor layer 321. A pair of conductive layers 325 is provided on and in contact with the semiconductor layer 321 and functions as a source electrode and a drain electrode.

[0480] [Insulating Layer 328 and Insulating Layer 264] The insulating layer 328 covers the top and side surfaces of the pair of conductive layers 325, the side surfaces of the semiconductor layer 321, and the like. The insulating layer 264 is provided over the insulating layer 328 and functions as an interlayer insulating layer. The insulating layer 328 and the insulating layer 264 have openings that reach the semiconductor layer 321. For example, an insulating film similar to the insulating layer 332 can be used for the insulating layer 328. This can prevent, for example, the phenomenon in which impurities such as water or hydrogen diffuse from the insulating layer 264 to the semiconductor layer 321. Furthermore, oxygen can be prevented from being released from the semiconductor layer 321.

[0481] [Insulating Layer 323] The insulating layer 323 is in contact with the side surfaces of the insulating layer 264, the insulating layer 328, and the conductive layer 325, and the top surface of the semiconductor layer 321 inside the opening.

[0482] [Conductive Layer 324] The conductive layer 324 is embedded in the opening and in contact with the insulating layer 323. The conductive layer 324 has a planarized upper surface, and its height is equal to or approximately equal to the upper surfaces of the insulating layer 323 and the insulating layer 264. The conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.

[0483] [Insulating Layer 329 and Insulating Layer 265] The insulating layer 329 covers the conductive layer 324, the insulating layer 323, and the insulating layer 264. The insulating layer 265 is provided over the insulating layer 329 and functions as an interlayer insulating layer. For example, an insulating film similar to the insulating layers 328 and 332 can be used for the insulating layer 329. This can prevent impurities such as water or hydrogen from diffusing from the insulating layer 265 to the transistor 320, for example.

[0484] [Plug 274] The plug 274 is embedded in the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328, and is electrically connected to one of the pair of conductive layers 325. The plug 274 has a conductive layer 274a and a conductive layer 274b. The conductive layer 274a is in contact with the side surfaces of the openings of the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328. The conductive layer 274a also covers part of the top surface of the conductive layer 325. The conductive layer 274b is in contact with the top surface of the conductive layer 274a. For example, a conductive material through which hydrogen and oxygen do not easily diffuse can be suitably used for the conductive layer 274a.

[0485] 29 is a cross-sectional view illustrating the configuration of a display device 100F. The display device 100F has a stacked structure of a transistor 320A and a transistor 320B. Both the transistor 320A and the transistor 320B include an oxide semiconductor, and a channel is formed in the oxide semiconductor. Note that the structure is not limited to a stacked structure of two transistors, and a stacked structure of three or more transistors may be used, for example.

[0486] The transistor 320A and its peripheral configuration have the same configuration as the transistor 320 and its peripheral configuration of the display device 100E. The transistor 320B and its peripheral configuration have the same configuration as the transistor 320 and its peripheral configuration of the display device 100E.

[0487] 30 is a cross-sectional view illustrating a configuration of a display device 100G. The display device 100G has a stacked structure of a transistor 310 and a transistor 320. A channel of the transistor 310 is formed in a substrate 301. The transistor 320 includes an oxide semiconductor, and a channel is formed in the oxide semiconductor.

[0488] An insulating layer 261 covers the transistor 310, and the conductive layer 251 is provided over the insulating layer 261. An insulating layer 262 covers the conductive layer 251, and the conductive layer 252 is provided over the insulating layer 262. An insulating layer 263 and an insulating layer 332 cover the conductive layer 252. Note that the conductive layer 251 and the conductive layer 252 each function as a wiring.

[0489] The transistor 320 is provided over the insulating layer 332, and the insulating layer 265 covers the transistor 320. The capacitor 240 is provided over the insulating layer 265, and the capacitor 240 is electrically connected to the transistor 320 by a plug 274.

[0490] For example, the transistor 320 can be used as a transistor included in a pixel circuit. Furthermore, the transistor 310 can be used as a transistor included in a pixel circuit or as a driver circuit (such as a gate driver circuit or a source driver circuit) for driving the pixel circuit. The transistors 310 and 320 can be used in various circuits such as an arithmetic circuit or a memory circuit. This allows, for example, not only a pixel circuit but also a driver circuit to be arranged directly under a light-emitting device. Furthermore, the display device can be made smaller than a configuration in which a driver circuit is provided in the periphery of a display region.

[0491] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0492] Embodiment 11 In this embodiment, a display module according to one embodiment of the present invention will be described.

[0493] <Display Module> FIG. 31 is a perspective view illustrating the configuration of the display module.

[0494] The display module includes the display device 100, an IC (integrated circuit) 176, and an FPC 177 or a connector. For example, the display device described in Embodiment 1 or 2 can be used as the display device 100.

[0495] The display device 100 is electrically connected to the IC 176 and the FPC 177. The FPC 177 receives signals and power from an external source and supplies the signals and power to the display device 100. Note that a connector is a mechanical component that electrically connects conductors, and the conductors can electrically connect the display device 100 to a component to which it is connected. For example, the FPC 177 can be used as the conductor. The connector can also disconnect the display device 100 from the component to which it is connected.

[0496] The display module includes an IC 176. For example, the IC 176 can be provided on the substrate 14b using a COG (chip on glass) method or the like. Alternatively, the IC 176 can be provided on an FPC using a COF (chip on film) method or the like. For example, a gate driver circuit or a source driver circuit can be used as the IC 176.

[0497] The display module may include a touch sensor. For example, a projected capacitive touch sensor includes an electrode RX and an electrode TX, with an insulating layer disposed between the electrodes RX and TX. This forms a capacitance between the electrodes RX and TX. When a pulse signal is supplied to the electrode TX, a change in the projected capacitance occurring between the electrode RX and the electrode TX can be detected using the electrode RX. The touch sensor can also detect the position of a user's finger on the display module.

[0498] <Display Device 100H> FIG. 32A is a cross-sectional view illustrating the configuration of a display device 100H.

[0499] The display device 100H has a display unit 37b, a connection unit 140, a circuit 164, wiring 165, etc. The display device 100H also has a substrate 16b and a substrate 14b, with the substrate 16b being bonded to the substrate 14b. The display device 100H has one or more connection units 140. The connection unit 140 can be provided outside the display unit 37b. For example, it can be provided along one side of the display unit 37b. Alternatively, it can be provided so as to surround multiple sides, for example, all four sides. In the connection unit 140, a common electrode of the light-emitting device is electrically connected to a conductive layer, and the conductive layer supplies a predetermined potential to the common electrode.

[0500] The wiring 165 is supplied with signals and power from the FPC 177 or the IC 176. The wiring 165 supplies signals and power to the display unit 37b and the circuit 164.

[0501] For example, the circuit 164 may be a gate driver circuit.

[0502] The display device 100H includes a substrate 14b, a substrate 16b, a transistor 201, a transistor 205, a light-emitting device 63R, a light-emitting device 63G, and a light-emitting device 63B (see FIG. 32A ). For example, the light-emitting device 63R emits red light 83R, the light-emitting device 63G emits green light 83G, and the light-emitting device 63B emits blue light 83B. Various optical components can be disposed on the outside of the substrate 16b. For example, a polarizing plate, a retardation plate, a light diffusion layer (e.g., a diffusion film), an anti-reflection layer, a light-collecting film, and the like can be disposed.

[0503] For example, the light emitting devices described in the fourth to eighth embodiments can be used as the light emitting device 63R, the light emitting device 63G, and the light emitting device 63B.

[0504] The light-emitting device includes a conductive layer 171, which functions as a pixel electrode. The conductive layer 171 includes a recess, which overlaps with openings provided in the insulating layers 214, 215, and 213. The transistor 205 includes a conductive layer 222b, which is electrically connected to the conductive layer 171.

[0505] The display device 100H has an insulating layer 272. The insulating layer 272 covers the ends of the conductive layer 171 and fills the recesses of the conductive layer 171 (see FIG. 32A).

[0506] The display device 100H includes a protective layer 273 and an adhesive layer 142. The protective layer 273 covers the light-emitting devices 63R, 63G, and 63B. The adhesive layer 142 bonds the protective layer 273 to the substrate 16b. The adhesive layer 142 fills the space between the substrate 16b and the protective layer 273. For example, the adhesive layer 142 may be formed in a frame shape so as not to overlap the light-emitting devices, and a resin different from that of the adhesive layer 142 may be filled in the area surrounded by the adhesive layer 142, the substrate 16b, and the protective layer 273. Alternatively, the area may be filled with an inert gas (such as nitrogen or argon) to form a hollow sealing structure. For example, the adhesive layer 142 may be made of a material that can be used for the adhesive layer 122.

[0507] The display device 100H has a connection portion 140, which includes a conductive layer 168. Note that the conductive layer 168 is supplied with a power supply potential. The light-emitting device also has a conductive layer 173, which is electrically connected to the conductive layer 173 and is supplied with a power supply potential. Note that the conductive layer 173 functions as a common electrode. Also, for example, the conductive layer 171 and the conductive layer 168 can be formed by processing one conductive film.

[0508] The display device 100H is a top-emission type. The light-emitting device emits light toward the substrate 16b. The conductive layer 171 includes a material that reflects visible light, and the conductive layer 173 transmits visible light.

[0509] [Insulating Layer 211, Insulating Layer 213, Insulating Layer 215, Insulating Layer 214] Insulating layer 211, insulating layer 213, insulating layer 215, and insulating layer 214 are provided on substrate 14b in this order. The number of insulating layers is not limited, and each may be a single layer or two or more layers.

[0510] For example, an inorganic insulating film can be used for the insulating layer 211, the insulating layer 213, and the insulating layer 215. For example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, or the like can be used. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like can be used. Alternatively, two or more of the above insulating films can be stacked.

[0511] The insulating layer 215 and the insulating layer 214 cover the transistor. The insulating layer 214 functions as a planarization layer. For example, it is preferable to use a material through which impurities such as water and hydrogen do not easily diffuse for the insulating layer 215 or the insulating layer 214. This can effectively prevent impurities from diffusing from the outside into the transistor. Furthermore, the reliability of the display device can be improved.

[0512] For example, an organic insulating layer can be suitably used for the insulating layer 214. Specifically, acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins can be used for the organic insulating layer. Also, a laminated structure of an organic insulating layer and an inorganic insulating layer can be used for the insulating layer 214. This allows the outermost layer of the insulating layer 214 to be used as an etching protection layer. For example, when processing the conductive layer 171 into a predetermined shape, the phenomenon of forming recesses in the insulating layer 214 can be suppressed.

[0513] [Transistor 201, Transistor 205] The transistor 201 and the transistor 205 are both formed on the substrate 14b. These transistors can be manufactured using the same material and in the same process.

[0514] The transistor 201 and the transistor 205 each include a conductive layer 221, an insulating layer 211, conductive layers 222a and 222b, a semiconductor layer 231, an insulating layer 213, and a conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The conductive layer 221 functions as a gate, and the insulating layer 211 functions as a first gate insulating layer. The conductive layers 222a and 222b function as a source and a drain. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231. The conductive layer 223 functions as a gate, and the insulating layer 213 functions as a second gate insulating layer. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film.

[0515] The structure of the transistor included in the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0516] The transistor 201 and the transistor 205 have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and the same signal may be supplied to drive the transistor. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0517] The crystallinity of the semiconductor layer of the transistor is not particularly limited, and any of an amorphous semiconductor and a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0518] A semiconductor layer of the transistor preferably contains a metal oxide. That is, an OS transistor is preferably used as a transistor included in the display device of this embodiment.

[0519] [Semiconductor Layer] For example, indium oxide, gallium oxide, and zinc oxide can be used for the semiconductor layer. The metal oxide preferably contains two or three elements selected from indium, element M, and zinc. The element M is one or more elements selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, cobalt, and magnesium. In particular, the element M is preferably one or more elements selected from aluminum, gallium, yttrium, and tin.

[0520] In particular, as the metal oxide used for the semiconductor layer, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO). Alternatively, it is preferable to use an oxide containing indium, tin, and zinc (also referred to as ITZO (registered trademark)). Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also referred to as IAZO). Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also referred to as IAGZO).

[0521] When the metal oxide used in the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of atomic ratios of metal elements in such an In-M-Zn oxide include a composition of In:M:Zn=1:1:1 or thereabouts, In:M:Zn=1:1:1.2 or thereabouts, In:M:Zn=1:3:2 or thereabouts, In:M:Zn=1:3:4 or thereabouts, In:M:Zn=2:1:3 or thereabouts, In:M:Zn=3:1:2 or thereabouts, and In:M:Zn=4:2. :3 or a composition in the vicinity thereof, In:M:Zn = 4:2:4.1 or a composition in the vicinity thereof, In:M:Zn = 5:1:3 or a composition in the vicinity thereof, In:M:Zn = 5:1:6 or a composition in the vicinity thereof, In:M:Zn = 5:1:7 or a composition in the vicinity thereof, In:M:Zn = 5:1:8 or a composition in the vicinity thereof, In:M:Zn = 6:1:6 or a composition in the vicinity thereof, and In:M:Zn = 5:2:5 or a composition in the vicinity thereof. Note that a composition in the vicinity thereof includes a range of ±30% of the desired atomic ratio.

[0522] For example, when describing a composition having an atomic ratio of In:Ga:Zn = 4:2:3 or thereabout, this includes a case where, when In is taken as 4, Ga is 1 to 3 and Zn is 2 to 4. Furthermore, when describing a composition having an atomic ratio of In:Ga:Zn = 5:1:6 or thereabout, this includes a case where, when In is taken as 5, Ga is more than 0.1 and 2 or less and Zn is 5 to 7. Furthermore, when describing a composition having an atomic ratio of In:Ga:Zn = 1:1:1 or thereabout, this includes a case where, when In is taken as 1, Ga is more than 0.1 and 2 or less and Zn is more than 0.1 and 2 or less.

[0523] The semiconductor layer may have two or more metal oxide layers with different compositions. For example, a stacked structure of a first metal oxide layer having an atomic ratio of In:M:Zn=1:3:4 or a similar composition and a second metal oxide layer having an atomic ratio of In:M:Zn=1:1:1 or a similar composition provided on the first metal oxide layer is suitable. Gallium or aluminum is particularly preferred as the element M.

[0524] Alternatively, for example, a stacked structure of any one selected from indium oxide, indium gallium oxide, and IGZO and any one selected from IAZO, IAGZO, and ITZO (registered trademark) may be used.

[0525] Examples of crystalline oxide semiconductors include c-axis-aligned crystalline (CAAC)-OS, nanocrystalline (nc)-OS, and the like.

[0526] Alternatively, a transistor using silicon for a channel formation region (Si transistor) may be used. Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor having low temperature polysilicon (LTPS) in a semiconductor layer (also referred to as an LTPS transistor) may be used. An LTPS transistor has high field-effect mobility and favorable frequency characteristics.

[0527] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (such as data driver circuits) can be built on the same substrate as the display unit, which simplifies the external circuits mounted on the display device and reduces component and mounting costs.

[0528] An OS transistor has significantly higher field-effect mobility than a transistor using amorphous silicon. Furthermore, an OS transistor has significantly lower source-drain leakage current (also referred to as off-state current) in an off state and can hold charge accumulated in a capacitor connected in series with the transistor for a long period of time. Furthermore, the use of an OS transistor can reduce the power consumption of a display device.

[0529] Furthermore, to increase the light emission luminance of a light-emitting device included in a pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of a driving transistor included in the pixel circuit. Since an OS transistor has a higher source-drain withstand voltage than a Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the driving transistor included in a pixel circuit, it is possible to increase the amount of current flowing through the light-emitting device and increase the light emission luminance of the light-emitting device.

[0530] Furthermore, when the transistor operates in the saturation region, the OS transistor can reduce the change in source-drain current relative to the change in gate-source voltage compared to a Si transistor. Therefore, by using an OS transistor as a driving transistor included in a pixel circuit, the current flowing between the source and drain can be precisely controlled by controlling the gate-source voltage. Therefore, the amount of current flowing through the light-emitting device can be controlled. This allows for a greater number of gray levels in the pixel circuit.

[0531] Furthermore, in terms of the saturation characteristics of the current that flows when a transistor operates in the saturation region, an OS transistor can pass a more stable current (saturation current) than a Si transistor, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a driving transistor, a stable current can be passed through a light-emitting device, even when the current-voltage characteristics of the light-emitting device vary. In other words, when an OS transistor operates in the saturation region, the source-drain current of the OS transistor remains almost unchanged even when the source-drain voltage increases. Therefore, the light-emitting luminance of the light-emitting device can be stabilized.

[0532] As described above, by using an OS transistor for a driving transistor included in a pixel circuit, it is possible to suppress black floating, increase light emission luminance, increase gray levels, and suppress variations in light-emitting devices.

[0533] The transistors included in the circuit 164 may have the same structure as or different from the transistors included in the display portion 107. The transistors included in the circuit 164 may all have the same structure or may have two or more types of structures. Similarly, the transistors included in the display portion 107 may all have the same structure or may have two or more types of structures.

[0534] All the transistors included in the display portion 107 may be OS transistors, or all the transistors included in the display portion 107 may be Si transistors. Alternatively, some of the transistors included in the display portion 107 may be OS transistors and the rest may be Si transistors.

[0535] For example, by using both an LTPS transistor and an OS transistor in the display portion 107, a display device with low power consumption and high driving capability can be realized. A structure in which an LTPS transistor and an OS transistor are combined is sometimes referred to as LTPO. Note that, for example, it is preferable to use an OS transistor as a transistor that functions as a switch for controlling conduction / non-conduction of a wiring, and to use an LTPS transistor as a transistor for controlling current.

[0536] For example, one of the transistors included in the display portion 107 functions as a transistor for controlling a current flowing through the light-emitting device and can be called a driving transistor. One of the source and the drain of the driving transistor is electrically connected to a pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor as the driving transistor. This allows the current flowing through the light-emitting device to be increased.

[0537] On the other hand, another transistor included in the display portion 107 functions as a switch for controlling pixel selection / non-selection and can also be referred to as a selection transistor. The gate of the selection transistor is electrically connected to a gate line, and one of the source and drain is electrically connected to a signal line. An OS transistor is preferably used as the selection transistor. This allows the gradation of a pixel to be maintained even when the frame frequency is significantly reduced (for example, 1 fps or less), and therefore power consumption can be reduced by stopping the driver when displaying a still image.

[0538] As described above, the display device of one embodiment of the present invention can have a high aperture ratio, high definition, high display quality, and low power consumption.

[0539] Note that a display device according to one embodiment of the present invention includes an OS transistor and a light-emitting device with an MML structure. This structure can significantly reduce leakage current that can flow through the transistor and between adjacent light-emitting devices. Furthermore, with this structure, when an image is displayed on the display device, a viewer can observe one or more of image clarity, image sharpness, high saturation, and a high contrast ratio. Note that a structure in which leakage current that can flow through the transistor and lateral leakage current between light-emitting devices are extremely low can minimize light leakage (so-called floating black) that can occur during black display, for example.

[0540] In particular, a light emitting device with an MML structure can significantly reduce the current flowing between adjacent light emitting devices.

[0541] [Transistor 209 and Transistor 210] FIGS. 32B and 32C are cross-sectional views illustrating another example of the cross-sectional structure of a transistor that can be used in the display device 100H.

[0542] The transistor 209 and the transistor 210 each include a conductive layer 221, an insulating layer 211, a semiconductor layer 231, a conductive layer 222a, a conductive layer 222b, an insulating layer 225, a conductive layer 223, and an insulating layer 215. The semiconductor layer 231 includes a channel formation region 231i and a pair of low-resistance regions 231n. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The conductive layer 221 functions as a gate, and the insulating layer 211 functions as a first gate insulating layer. The insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231i. The conductive layer 223 functions as a gate, and the insulating layer 225 functions as a second gate insulating layer. The conductive layer 222a is electrically connected to one of the pair of low-resistance regions 231n, and the conductive layer 222b is electrically connected to the other of the pair of low-resistance regions 231n. An insulating layer 215 covers the conductive layer 223. An insulating layer 218 further covers the transistor.

[0543] [Structure example 1 of insulating layer 225] In the transistor 209, the insulating layer 225 covers the top surface and side surface of the semiconductor layer 231 (see FIG. 32B ). The insulating layer 225 and the insulating layer 215 have openings, and the conductive layer 222a and the conductive layer 222b are electrically connected to the low-resistance region 231n through the openings. Note that one of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

[0544] [Structure example 2 of insulating layer 225] In the transistor 210, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 but does not overlap with the low-resistance region 231n (see FIG. 32C ). For example, the insulating layer 225 can be processed into a predetermined shape using the conductive layer 223 as a mask. The insulating layer 215 covers the insulating layer 225 and the conductive layer 223. The insulating layer 215 has openings, and the conductive layers 222a and 222b are electrically connected to the low-resistance region 231n.

[0545] [Connection portion 204] The connection portion 204 is provided on the substrate 14b. The connection portion 204 includes a conductive layer 166, which is electrically connected to the wiring 165. Note that the connection portion 204 does not overlap with the substrate 16b, and the conductive layer 166 is exposed. Note that the conductive layer 166 and the conductive layer 171 can be formed by processing one conductive film. The conductive layer 166 is electrically connected to the FPC 177 via a connection layer 242. For example, an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like can be used for the connection layer 242.

[0546] <<Display Device 100I>> FIG. 33 is a cross-sectional view illustrating the configuration of the display device 100I. The display device 100I differs from the display device 100H in that it is flexible. In other words, the display device 100I is a flexible display. The display device 100I has a substrate 17 instead of the substrate 14b and a substrate 18 instead of the substrate 16b. Both the substrates 17 and 18 are flexible. The display device 100I also has a conductive layer 169A, a conductive layer 169B, and an insulating layer 163. The conductive layer 169A and the conductive layer 169B are disposed between adjacent light-emitting devices so as not to overlap the light-emitting devices. The insulating layer 163 is sandwiched between the conductive layer 169A and the conductive layer 169B and is light-transmitting. For example, the conductive layer 169A can be used as an electrode for a projected capacitive touch sensor. The insulating layer 163 can also be used to insulate the area where the electrodes of a pair of touch sensors intersect. Furthermore, a conductive layer 169B can be used in a portion where one electrode is connected to the other electrode by climbing over the other electrode.

[0547] The display device 100I includes an adhesive layer 156 and an insulating layer 162. The adhesive layer 156 bonds the insulating layer 162 to the substrate 17. For example, the material that can be used for the adhesive layer 122 can be used for the adhesive layer 156. For example, the material that can be used for the insulating layer 211, the insulating layer 213, or the insulating layer 215 can be used for the insulating layer 162. Note that the transistor 201 and the transistor 205 are provided over the insulating layer 162.

[0548] For example, an insulating layer 162 is formed on a fabrication substrate, and each transistor, a light-emitting device, and the like are formed on the insulating layer 162. Next, for example, an adhesive layer 142 is formed on the light-emitting device, and the fabrication substrate and substrate 18 are bonded together using the adhesive layer 142. Next, the fabrication substrate is separated from the insulating layer 162 to expose the surface of the insulating layer 162. Thereafter, an adhesive layer 156 is formed on the exposed surface of the insulating layer 162, and the insulating layer 162 and substrate 17 are bonded together using the adhesive layer 156. In this way, each component formed on the fabrication substrate can be transferred onto the substrate 17 to fabricate the display device 100I.

[0549] 34 is a cross-sectional view illustrating the configuration of the display device 100J. The display device 100J differs from the display device 100H in that the display device 100J has a light-emitting device 63W instead of the light-emitting device 63R, the light-emitting device 63G, and the light-emitting device 63B, and in that the display device 100J has colored layers 183R, 183G, and 183B.

[0550] The display device 100J includes a coloring layer 183R, a coloring layer 183G, and a coloring layer 183B between the substrate 16b and the substrate 14b. The coloring layer 183R overlaps one light-emitting device 63W, the coloring layer 183G overlaps another light-emitting device 63W, and the coloring layer 183B overlaps yet another light-emitting device 63W.

[0551] The display device 100J has a light-shielding layer 117. For example, the light-shielding layer 117 is provided between the colored layer 183R and the colored layer 183G, between the colored layer 183G and the colored layer 183B, and between the colored layer 183B and the colored layer 183R. The light-shielding layer 117 also has a region overlapping with the connection portion 140 and a region overlapping with the circuit 164.

[0552] The light-emitting device 63W can emit, for example, white light. Furthermore, for example, the colored layer 183R can transmit red light, the colored layer 183G can transmit green light, and the colored layer 183B can transmit blue light. As a result, the display device 100J can emit, for example, red light 83R, green light 83G, and blue light 83B, thereby achieving full-color display.

[0553] <Display Device 100K> Figure 35 is a cross-sectional view illustrating the configuration of the display device 100K. The display device 100K differs from the display device 100H in that it is a bottom-emission type. The light-emitting device emits light 83R, light 83G, and light 83B toward the substrate 14b. A material that transmits visible light is used for the conductive layer 171. A material that reflects visible light is used for the conductive layer 173.

[0554] <<Display Device 100L>> Figure 36 is a cross-sectional view illustrating the configuration of the display device 100L. The display device 100L differs from the display device 100H in that it is flexible and is a bottom-emission type. The display device 100L has a substrate 17 instead of the substrate 14b, and a substrate 18 instead of the substrate 16b. Both the substrate 17 and the substrate 18 are flexible. The light-emitting device emits light 83R, light 83G, and light 83B toward the substrate 17.

[0555] The conductive layer 221 and the conductive layer 223 may be light-transmitting or reflective to visible light. When the conductive layer 221 and the conductive layer 223 are light-transmitting to visible light, the transmittance of visible light in the display portion 107 can be increased. On the other hand, when the conductive layer 221 and the conductive layer 223 are reflective to visible light, the amount of visible light incident on the semiconductor layer 231 can be reduced. Furthermore, damage to the semiconductor layer 231 can be reduced. This can improve the reliability of the display device 100K or the display device 100L.

[0556] Note that even in a top-emission display device such as the display device 100H or the display device 100I, at least a part of the layer constituting the transistor 205 may be configured to transmit visible light. In this case, the conductive layer 171 also has a structure that transmits visible light. In this manner, the transmittance of visible light in the display portion 107 can be increased.

[0557] 37 is a cross-sectional view illustrating the configuration of the display device 100M. The display device 100M differs from the display device 100H in that the display device 100M has a light-emitting device 63W instead of the light-emitting device 63R, the light-emitting device 63G, and the light-emitting device 63B, that the display device 100M has colored layers 183R, the colored layers 183G, and the colored layers 183B, and that the display device 100M is a bottom-emission type.

[0558] The display device 100M includes a colored layer 183R, a colored layer 183G, and a colored layer 183B. The display device 100M also includes a light-shielding layer 117.

[0559] [Coloring Layer 183R, Coloring Layer 183G, and Coloring Layer 183B] The coloring layer 183R is located between one light-emitting device 63W and the substrate 14b, the coloring layer 183G is located between another light-emitting device 63W and the substrate 14b, and the coloring layer 183B is located between yet another light-emitting device 63W and the substrate 14b. For example, the coloring layer 183R, the coloring layer 183G, and the coloring layer 183B can be provided between the insulating layer 215 and the insulating layer 214.

[0560] [Light-shielding layer 117] The light-shielding layer 117 is provided on the substrate 14b, and is located between the substrate 14b and the transistor 205. Note that the insulating layer 153 is located between the light-shielding layer 117 and the transistor 205. For example, the light-shielding layer 117 does not overlap with the light-emitting region of the light-emitting device 63W. Furthermore, for example, the light-shielding layer 117 overlaps with the connection portion 140 and the circuit 164.

[0561] The light-shielding layer 117 can also be provided in the display device 100K or the display device 100L. In this case, it is possible to prevent light emitted by the light-emitting device 63R, the light-emitting device 63G, and the light-emitting device 63B from being reflected by, for example, the substrate 14b and diffusing inside the display device 100K or the display device 100L. This allows the display device 100K and the display device 100L to be display devices with high display quality. On the other hand, not providing the light-shielding layer 117 can increase the light extraction efficiency of the light emitted by the light-emitting device 63R, the light-emitting device 63G, and the light-emitting device 63B.

[0562] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0563] Embodiment 12 In this embodiment, an electronic device according to one embodiment of the present invention will be described.

[0564] The electronic devices of this embodiment include the display device of one embodiment of the present invention in their display portions. The display device of one embodiment of the present invention is highly reliable and can easily achieve high definition and high resolution. Therefore, the display device of one embodiment of the present invention can be used in the display portions of various electronic devices.

[0565] Examples of electronic devices include electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound playback devices.

[0566] In particular, the display device of one embodiment of the present invention can be suitably used in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), and head-mounted wearable devices such as VR devices such as head-mounted displays, AR glasses-type devices, and MR devices.

[0567] The display device of one embodiment of the present invention preferably has an extremely high resolution, such as HD (1280 × 720 pixels), FHD (1920 × 1080 pixels), WQHD (2560 × 1440 pixels), WQXGA (2560 × 1600 pixels), 4K (3840 × 2160 pixels), or 8K (7680 × 4320 pixels). A resolution of 4K, 8K, or higher is particularly preferable. Furthermore, the pixel density (resolution) of the display device of one embodiment of the present invention is preferably 100 ppi or higher, more preferably 300 ppi or higher, more preferably 500 ppi or higher, more preferably 1000 ppi or higher, more preferably 2000 ppi or higher, more preferably 3000 ppi or higher, more preferably 5000 ppi or higher, and even more preferably 7000 ppi or higher. By using a display device having either or both of high resolution and high definition, it is possible to further enhance the sense of realism and depth in electronic devices for portable or home use, etc. Furthermore, the screen ratio (aspect ratio) of the display device of one embodiment of the present invention is not particularly limited. For example, the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0568] The electronic device of this embodiment may have a sensor (including a function to measure force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared light).

[0569] The electronic device of the present embodiment can have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to execute various software (programs), a wireless communication function, or a function to read out programs or data recorded on a recording medium.

[0570] 38A to 38D , examples of wearable devices that can be worn on the head will be described. These wearable devices have at least one of the following functions: a function to display AR content, a function to display VR content, a function to display SR content, and a function to display MR content. By having an electronic device have the function to display at least one of AR, VR, SR, MR, etc., it is possible to enhance the sense of immersion for the user.

[0571] Electronic device 6700A shown in FIG. 38A and electronic device 6700B shown in FIG. 38B each have a pair of display panels 6751, a pair of housings 6721, a communication unit (not shown), a pair of mounting units 6723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 6753, a frame 6757, and a pair of nose pads 6758.

[0572] The display device of one embodiment of the present invention can be applied to the display panel 6751. Therefore, the electronic device can be highly reliable.

[0573] The electronic device 6700A and the electronic device 6700B can each project an image displayed on the display panel 6751 onto a display area 6756 of the optical member 6753. Because the optical member 6753 is translucent, the user can see the image displayed in the display area superimposed on a transmitted image visually recognized through the optical member 6753. Therefore, the electronic device 6700A and the electronic device 6700B are each electronic devices capable of AR display.

[0574] The electronic device 6700A and the electronic device 6700B may be provided with a camera capable of capturing an image of the front as an imaging unit. The electronic device 6700A and the electronic device 6700B may each include an acceleration sensor such as a gyro sensor to detect the orientation of the user's head and display an image corresponding to the orientation in the display region 6756.

[0575] The communication unit has a wireless communication device, and can supply, for example, a video signal via the wireless communication device. Note that instead of or in addition to the wireless communication device, a connector to which a cable through which a video signal and a power supply potential can be connected may be provided.

[0576] Furthermore, the electronic device 6700A and the electronic device 6700B are provided with batteries, which can be charged wirelessly and / or by wire.

[0577] The housing 6721 may be provided with a touch sensor module. The touch sensor module has a function of detecting a touch on the outer surface of the housing 6721. The touch sensor module detects a tap operation, a slide operation, or the like by a user and can perform various processes. For example, a tap operation can perform a process such as pausing or resuming a video, and a slide operation can perform a process such as fast-forwarding or fast-rewinding. Furthermore, providing a touch sensor module on each of the two housings 6721 can widen the range of operations.

[0578] Various touch sensors can be used as the touch sensor module. For example, various types of touch sensors can be used, such as a capacitance type, a resistive film type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, or an optical type. In particular, it is preferable to use a capacitance type or an optical type sensor in the touch sensor module.

[0579] When an optical touch sensor is used, a photoelectric conversion element (also called a photoelectric conversion device) can be used as the light receiving element. The active layer of the photoelectric conversion element can be made of either an inorganic semiconductor or an organic semiconductor, or both.

[0580] The electronic device 6800A shown in Figure 38C and the electronic device 6800B shown in Figure 38D each have a pair of display units 6820, a housing 6821, a communication unit 6822, a pair of mounting units 6823, a control unit 6824, a pair of imaging units 6825, and a pair of lenses 6832.

[0581] The display device of one embodiment of the present invention can be applied to the display portion 6820. Therefore, the electronic device can have high reliability.

[0582] The display portion 6820 is provided inside the housing 6821 at a position where it can be seen through a lens 6832. By displaying different images on the pair of display portions 6820, three-dimensional display using parallax can be achieved.

[0583] The electronic device 6800A and the electronic device 6800B can be said to be electronic devices for VR. A user wearing the electronic device 6800A or the electronic device 6800B can view an image displayed on the display unit 6820 through the lens 6832.

[0584] The electronic device 6800A and the electronic device 6800B preferably have a mechanism that can adjust the left-right positions of the lens 6832 and the display portion 6820 so that the positions are optimal for the user's eyes. Also, the electronic device 6800A and the electronic device 6800B preferably have a mechanism that can adjust the focus by changing the distance between the lens 6832 and the display portion 6820.

[0585] The mounting unit 6823 allows the user to mount the electronic device 6800A or the electronic device 6800B on the head. Note that, for example, in Fig. 38C , the mounting unit 6823 has a shape similar to the temples of glasses (also referred to as temples, etc.), but is not limited to this. The mounting unit 6823 may have a helmet-like or band-like shape as long as it can be worn by the user.

[0586] The imaging unit 6825 has a function of acquiring external information. Data acquired by the imaging unit 6825 can be output to the display unit 6820. An image sensor can be used for the imaging unit 6825. Furthermore, multiple cameras may be provided to support multiple angles of view, such as telephoto and wide-angle.

[0587] Note that although an example including the imaging unit 6825 is shown here, a distance measuring sensor (also referred to as a detection unit) capable of measuring the distance to an object may be provided. That is, the imaging unit 6825 is one mode of the detection unit. As the detection unit, for example, an image sensor or a range image sensor such as a light detection and ranging (LIDAR) sensor can be used. By using an image obtained by a camera and an image obtained by a range image sensor, more information can be obtained, enabling more accurate gesture operations.

[0588] The electronic device 6800A may have a vibration mechanism that functions as bone conduction earphones. For example, a configuration having such a vibration mechanism can be applied to one or more of the display unit 6820, the housing 6821, and the wearing unit 6823. This allows a user to enjoy video and audio simply by wearing the electronic device 6800A, without the need for separate audio equipment such as headphones, earphones, or speakers.

[0589] The electronic device 6800A and the electronic device 6800B may each have an input terminal. The input terminal can be connected to a cable for supplying a video signal from a video output device or the like and power for charging a battery provided in the electronic device.

[0590] The electronic device of one embodiment of the present invention may have a function of wirelessly communicating with an earphone 6750. The earphone 6750 includes a communication unit (not shown) and has a wireless communication function. The earphone 6750 can receive information (e.g., audio data) from the electronic device through the wireless communication function. For example, the electronic device 6700A shown in FIG. 38A has a function of transmitting information to the earphone 6750 through the wireless communication function. Furthermore, for example, the electronic device 6800A shown in FIG. 38C has a function of transmitting information to the earphone 6750 through the wireless communication function.

[0591] The electronic device may also have an earphone unit. Electronic device 6700B shown in Fig. 38B has earphone unit 6727. For example, earphone unit 6727 and the control unit may be configured to be connected to each other by wire. Part of the wiring connecting earphone unit 6727 and the control unit may be disposed inside housing 6721 or attachment unit 6723.

[0592] 38D has an earphone unit 6827. For example, the earphone unit 6827 and the control unit 6824 can be configured to be connected to each other by wire. A portion of the wiring connecting the earphone unit 6827 and the control unit 6824 may be disposed inside the housing 6821 or the attachment unit 6823. The earphone unit 6827 and the attachment unit 6823 may also have magnets. This allows the earphone unit 6827 to be fixed to the attachment unit 6823 by magnetic force, which is preferable as it makes storage easier.

[0593] The electronic device may have an audio output terminal to which earphones or headphones can be connected. The electronic device may also have one or both of an audio input terminal and an audio input mechanism. For example, a sound collection device such as a microphone can be used as the audio input mechanism. By having the audio input mechanism, the electronic device may be endowed with the functionality of a so-called headset.

[0594] As described above, as electronic devices of one embodiment of the present invention, both glasses-type devices (such as the electronic devices 6700A and 6700B) and goggle-type devices (such as the electronic devices 6800A and 6800B) are suitable.

[0595] Furthermore, the electronic device according to one embodiment of the present invention can transmit information to the earphone via a wired or wireless connection.

[0596] The electronic device 6500 shown in FIG. 39A is a portable information terminal that can be used as a smartphone.

[0597] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display portion 6502 has a touch panel function.

[0598] The display device of one embodiment of the present invention can be applied to the display portion 6502. Therefore, the electronic device can have high reliability.

[0599] FIG. 39B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0600] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, an optical member 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0601] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by adhesive layers (not shown).

[0602] A part of the display panel 6511 is folded back in a region outside the display portion 6502, and an FPC 6515 is connected to the folded back region. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0603] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while keeping the thickness of the electronic device small. Furthermore, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0604] 39C shows an example of a television set. A television set 7100 has a display portion 7000 built into a housing 7101. Here, the housing 7101 is supported by a stand 7103.

[0605] The display device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can have high reliability.

[0606] 39C can be operated using operation switches provided on the housing 7101 and a separate remote control 7111. Alternatively, the display portion 7000 may be provided with a touch sensor, and the television set 7100 may be operated by touching the display portion 7000 with a finger or the like. The remote control 7111 may have a display portion that displays information output from the remote control 7111. Using operation keys or a touch panel provided on the remote control 7111, the channel and volume can be controlled, and an image displayed on the display portion 7000 can be controlled.

[0607] The television device 7100 is configured to include a receiver, a modem, and the like. Ordinary television broadcasts can be received using the receiver. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from a sender to a receiver) or two-way (between a sender and a receiver, or between receivers, etc.) information communication.

[0608] 39D shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, and an external connection port 7214. The housing 7211 includes a display portion 7000.

[0609] The display device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can have high reliability.

[0610] 39E and 39F show an example of digital signage.

[0611] 39E includes a housing 7301, a display portion 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0612] 39F shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0613] 39E and 39F, the display device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can have high reliability.

[0614] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it will attract people's attention, which can increase the advertising effectiveness of, for example, advertisements.

[0615] Applying a touch panel to the display unit 7000 is preferable because it not only displays images or videos on the display unit 7000 but also allows the user to intuitively operate it. Furthermore, when used to provide information such as route information or traffic information, the intuitive operation can improve usability.

[0616] 39E and 39F , the digital signage 7300 or the digital signage 7400 is preferably capable of wirelessly linking with an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user. For example, advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. By operating the information terminal 7311 or the information terminal 7411, the display on the display unit 7000 can be switched.

[0617] Furthermore, the digital signage 7300 or the digital signage 7400 can be made to run a game using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller), thereby allowing an unspecified number of users to simultaneously participate in and enjoy the game.

[0618] The electronic device shown in Figures 40A to 40G has a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including a function to measure force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays), and a microphone 9008.

[0619] The electronic devices shown in Figures 40A to 40G have various functions. For example, they may have a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to control processing using various software (programs), a wireless communication function, or a function to read and process programs or data recorded on a recording medium. Note that the functions of the electronic devices are not limited to these, and they may have various other functions. The electronic devices may have multiple display units. Furthermore, the electronic devices may be provided with a camera or the like, and may have functions such as capturing still images or videos and saving them on a recording medium (external or built-in to the camera), and displaying the captured images on the display unit.

[0620] The electronic devices shown in Figures 40A to 40G will be described in detail below.

[0621] FIG. 40A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 can be used as, for example, a smartphone. Note that the mobile information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, or the like. The mobile information terminal 9101 can display text and image information on multiple surfaces. FIG. 40A shows an example in which three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the title of the email or SNS message, the sender's name, the date and time, the remaining battery level, and radio wave intensity. Alternatively, an icon 9050, for example, may be displayed in the position where the information 9051 is displayed.

[0622] 40B is a perspective view showing the mobile information terminal 9102. The mobile information terminal 9102 has a function of displaying information on three or more surfaces of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, a user can check information 9053 displayed in a position that can be observed from above the mobile information terminal 9102 while the mobile information terminal 9102 is placed in a breast pocket of clothes. The user can check the display without taking the mobile information terminal 9102 out of the pocket and decide, for example, whether to answer a call.

[0623] 40C is a perspective view showing a tablet terminal 9103. The tablet terminal 9103 is capable of executing various applications such as mobile phone calls, e-mail, text browsing and creation, music playback, internet communication, and computer games, for example. The tablet terminal 9103 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front side of a housing 9000, operation keys 9005 as operation buttons on the left side of the housing 9000, and a connection terminal 9006 on the bottom.

[0624] FIG. 40D is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used as, for example, a smart watch (registered trademark). The display surface of the display unit 9001 is curved, and display can be performed along the curved display surface. The mobile information terminal 9200 can also perform hands-free calling by communicating with, for example, a headset capable of wireless communication. The mobile information terminal 9200 can also perform data transmission and charging with another information terminal through a connection terminal 9006. Note that charging may be performed by wireless power supply.

[0625] 40E to 40G are perspective views showing a foldable mobile information terminal 9201. Also, FIG. 40E is a perspective view of the mobile information terminal 9201 in an unfolded state, FIG. 40G is a perspective view of the mobile information terminal 9201 in a folded state, and FIG. 40F is a perspective view of a state in the process of changing from one of FIG. 40E and FIG. 40G to the other. The mobile information terminal 9201 is highly portable when folded, and has a seamless, wide display area when unfolded, providing excellent visibility of the display. The display portion 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display portion 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0626] This embodiment mode can be combined with other embodiment modes as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0627] Embodiment 13 In this embodiment, an in-vehicle system according to one embodiment of the present invention will be described with reference to FIG.

[0628] FIG. 41A is a block diagram illustrating the configuration of an in-vehicle system according to one embodiment of the present invention, and FIG. 41B is a diagram illustrating the interior of a passenger car equipped with an in-vehicle system according to one embodiment of the present invention.

[0629] <Configuration Example 1 of In-Vehicle System> An in-vehicle system according to one aspect of the present invention includes a detection unit SEU, an information processing unit PU, and a display unit DU (see FIGS. 41A and 41B).

[0630] <Configuration Example 1 of Detection Unit SEU> The detection unit SEU includes imaging devices CAM1, CAM2, and CAM3, and a sensor SENS.

[0631] Image capture device CAM1 captures an image of area 1 and supplies data DATA1. Image capture device CAM2 captures an image of area 2 and supplies data DATA2. Sensor SENS measures the state of the vehicle and supplies data DATA4.

[0632] <<Configuration Example 1 of Information Processing Unit PU>> The information processing unit PU processes data DATA1, data DATA2, data DATA3, and data DATA4, and generates video information VIDEO1.

[0633] <Configuration Example 1 of Display Unit DU> The display unit DU includes a display device DISP1. The display device of one embodiment of the present invention can be applied to the display device DISP1. Therefore, a highly reliable in-vehicle system can be provided.

[0634] The display device DISP1 includes a display area AREA1, a display area AREA2, and a display area AREA3. For example, a strip-like shape can be used for the display device DISP1. Specifically, a shape having a width of 2200 mm or more and 2650 mm or less can be used for the display device DISP1.

[0635] Display area AREA1 displays an image generated from data DATA1. Display area AREA2 displays an image generated from data DATA2. Display area AREA3 displays an image generated from data DATA4.

[0636] <<Configuration Example 2 of Detection Unit SEU>> The detection unit SEU also includes an image capture device CAM3. The image capture device CAM3 captures an image of the driver and supplies data DATA3.

[0637] <<Configuration Example 2 of Information Processing Unit PU>> The information processing unit PU identifies the driver's gaze point from the data DATA 3. For example, an eye-tracking system can be used.

[0638] When the driver's gaze point is in display area AREA1, display area AREA2 or display area AREA3, the information processing unit PU generates video information VIDEO1 so that the brightness of the area including the gaze point is higher than that of areas away from the gaze point.

[0639] <<Configuration Example 3 of Information Processing Unit PU>> Furthermore, the information processing unit PU extracts data including dangerous situations from the data DATA1, data DATA2, and data DATA4, and generates video information VIDEO1 that displays video including dangerous situations at a higher brightness than video not including dangerous situations.

[0640] <<Configuration Example 4 of Information Processing Unit PU>> Furthermore, the information processing unit PU determines the driver's condition from the data DATA3, and when the driver is in a dangerous condition, the information processing unit PU generates video information VIDEO1 that is displayed at high brightness. For example, the high brightness is maintained for a period of 130 milliseconds or more, preferably 170 milliseconds or more. This makes it possible to maintain the high brightness for a period longer than the human reaction time.

[0641] <<Configuration Example 5 of Information Processing Unit PU>> Furthermore, the information processing unit PU determines the driver's state from the data DATA3, and when the driver is resting his eyes, the information processing unit PU generates video information VIDEO1 to be displayed at low brightness.

[0642] <<Configuration Example 6 of Information Processing Unit PU>> Furthermore, the information processing unit PU determines the driver's state from the data DATA3, and when the driver is resting his eyes, the information processing unit PU reduces the update frequency of the video information VIDEO1.

[0643] <<Configuration Example 2 of Display Unit DU>> Furthermore, the display unit DU includes a display device DISP1. The display device DISP1 includes a demultiplexer DEMUX, which distributes video information VIDEO1 to display areas AREA1, AREA2, and AREA3.

[0644] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0645] Embodiment 14 In this embodiment, a structure of a film formation system that can be used to manufacture a functional panel of one embodiment of the present invention will be described with reference to FIGS.

[0646] 42 is a diagram illustrating the configuration of a film formation system that can be used to manufacture a functional panel of one embodiment of the present invention. Fig. 42 is a schematic diagram of a cluster-type film formation system 1000A of one embodiment of the present invention, and Fig. 43 is a schematic diagram of an in-line-type film formation system 1000B.

[0647] 44A and 44B are cross-sectional views illustrating a state in which a film is formed on a first base material 1310 using a film formation apparatus 1100 and a mask frame 1170 that can be used in the film formation system of one embodiment of the present invention, and a state in which a film is formed on the first base material 1310 using an atomic layer deposition (ALD) apparatus.

[0648] <Configuration Example 1 of Film Forming System> The film forming system 1000A includes a loading device LD, a transfer chamber DC connected to the loading device LD, an unloading device ULD connected to the transfer chamber DC, a film forming apparatus 1100 connected to the transfer chamber DC, a processing chamber 1101 connected to the transfer chamber DC, at least one atomic layer deposition apparatus ALD, and a sealing chamber SU (see FIG. 42).

[0649] The first substrate 1310 is loaded into the film forming system 1000A by the loading device LD. The loaded first substrate 1310 is transported to each device via the transport chamber DC. The first substrate 1310 is then unloaded from the film forming system 1000A by the unloading device ULD.

[0650] In the film forming apparatus 1100 , a film is formed from a film forming material on the transported first substrate 1310 .

[0651] Furthermore, processes such as patterning processing may be performed as necessary in the processing chamber 1101. For example, processes such as resist coating, exposure, and processing may be performed.

[0652] In addition, in the atomic layer deposition apparatus ALD, a film formation material is formed on the transported first substrate 1310. Note that by moving back and forth between the atomic layer deposition apparatus ALD and the transport chamber DC, a layered structure can be formed using films formed using the ALD method. The layered structure may be a layered structure of different film types by appropriately selecting film formation materials such as precursors.

[0653] The sealing chamber SU seals the transported first base material 1310 with a sealant. For example, a bonding layer may be formed on the first base material 1310, and the first base material 1310 and a second base material 1370 that has been transported in advance may be bonded together using the bonding layer to form a sealant. Note that the sealing chamber SU may be provided as needed, but is not necessarily required.

[0654] The film formation system 1000A may include a plurality of loading devices LD, transfer chambers DC, unloading devices ULD, film formation apparatuses 1100, processing chambers 1101, and atomic layer deposition apparatuses ALD. When a plurality of film formation apparatuses 1100, processing chambers 1101, and atomic layer deposition apparatuses ALD are provided, each of the film formation apparatuses and atomic layer deposition apparatuses ALD may be connected to the transfer chamber DC.

[0655] <Configuration Example 2 of Film Forming System> The film forming system 1000B includes a film forming line 1110 (film forming line 1110a, film forming line 1110b), a film forming line 1111, and a film forming line 1112 (see FIG. 43).

[0656] The film formation line 1110 includes a loading device LD, a film formation apparatus 1100A connected to the loading device LD, a film formation apparatus 1100B connected to the film formation apparatus 1100A, a film formation apparatus 1100C connected to the film formation apparatus 1100B, an atomic layer deposition apparatus ALD connected to the film formation apparatus 1100C, a film formation apparatus 1100D connected to the atomic layer deposition apparatus ALD, an unloading device ULD connected to the atomic layer deposition apparatus ALD, and a processing chamber 1101A.

[0657] 43 shows an example of a film formation system 1000B having two film formation lines 1110a and 1110b to improve throughput when fabricating stacked structures with different configurations. For example, if there are three types of stacked structures with different configurations, a configuration having three film formation lines may be used, or one film formation line may be used multiple times to form stacked structures with different configurations. Therefore, the configuration is not limited to that shown in FIG. 43. It is sufficient to have at least one film formation line 1110a or 1110b, and multiple film formation lines may be provided as needed.

[0658] The film formation line 1111 includes a loading device LD, an atomic layer deposition apparatus ALD connected to the loading device LD, an unloading device ULD connected to the atomic layer deposition apparatus ALD, and a processing chamber 1101B.

[0659] The film formation line 1112 includes a loading device LD, a film formation apparatus 1100E connected to the loading device LD, an atomic layer deposition apparatus ALD connected to the film formation apparatus 1100E, a sealing chamber SU connected to the atomic layer deposition apparatus ALD, and an unloading device ULD connected to the sealing chamber SU.

[0660] In the film formation lines 1110, 1111, and 1112, the first substrate 1310 is carried into each film formation line by each carry-in device LD. The first substrate 1310 is carried out from each film formation line by each carry-out device ULD.

[0661] In the film formation line 1110, the film formation apparatuses 1100A to 1100D form a film of a film formation material on the transported first base material 1310.

[0662] In addition, in the atomic layer deposition apparatus ALD, a film is formed from a film-forming material on the transported first substrate 1310 .

[0663] Furthermore, in the processing chamber 1101A, processes such as patterning processing can be performed as needed, for example, resist coating, exposure, and processing.

[0664] In the film formation line 1111 , the atomic layer deposition (ALD) equipment forms a film of a film formation material on the transported first substrate 1310 .

[0665] Furthermore, in the processing chamber 1101B, processes such as patterning processing can be performed as needed, for example, resist coating, exposure, and processing.

[0666] In the film formation line 1112, the film formation apparatus 1100E forms a film of a film formation material on the transported first base material 1310. As the material, a metal material or the like can be formed as a film in addition to an organic material.

[0667] In addition, in the atomic layer deposition apparatus ALD, a film is formed from a film-forming material on the transported first substrate 1310 .

[0668] The sealing chamber SU seals the transported first base material 1310 with a sealant. For example, a bonding layer may be formed on the first base material 1310, and the first base material 1310 and a second base material 1370 that has been transported in advance may be bonded together using the bonding layer to form a sealant. Note that the sealing chamber SU may be provided as needed, but is not necessarily required.

[0669] Each of the film formation apparatuses 1100A to 1100E, the sealing chamber SU, and the atomic layer deposition apparatus ALD has a loading entrance and a loading exit.

[0670] In addition, in order to prevent moisture from adhering to the film forming system 1000A or the film forming system 1000B, it is preferable to fill each device with an inert gas (such as nitrogen gas) with a controlled dew point, and it is desirable to maintain a reduced pressure.

[0671] The film formation system 1000A or 1000B described in this embodiment may include a plurality of film formation apparatuses, sealing chambers, atomic layer deposition apparatuses (ALD apparatuses), and processing chambers. For example, by including a plurality of atomic layer deposition apparatuses (ALD apparatuses), a layered structure can be formed using films formed using the ALD method.

[0672] This allows a laminated film in which multiple films are stacked to be formed on the first base material 1310. Furthermore, exposure of the formed film to the atmosphere is minimized, thereby preventing impurities from being mixed in. Furthermore, a manufacturing process with high throughput can be provided.

[0673] In the film formation system 1000B, the film formation lines 1110 to 1112 do not need to be individual lines, but may be connected together to form a series of in-line systems.

[0674] The following describes the individual elements constituting the film forming system 1000A or the film forming system 1000B. Note that these components cannot be clearly separated, and one component may also serve as another component or may include part of another component.

[0675] <<Film formation apparatus 1100>> The film formation apparatus 1100 described in this embodiment includes an evaporation source 1120A having a function of ejecting a film formation material so as to adhere to a first base material 1310, a mask frame 1170 between the first base material 1310 and the evaporation source 1120A, a mask frame support part 1115 having a function of supporting the mask frame 1170, and a film formation chamber 1190 in which the evaporation source 1120A and the mask frame support part 1115 are arranged (see Figure 44A).

[0676] The film formation apparatus 1100 may also have a power source 1140. For example, the film formation apparatus 1100 may have a function of moving the first base material 1310 relative to the evaporation source 1120A using the power source 1140. This allows the film formation material ejected from the evaporation source 1120A to be uniformly deposited on the surface of the first base material 1310.

[0677] Furthermore, the film forming apparatus 1100 may use, for example, a power source 1140 to move the mask frame support portion 1115 together with the mask frame 1170 and the first base material 1310 .

[0678] The deposition apparatus 1100 may also have a detector 1198 that detects the position of the mask frame 1170 relative to the first substrate 1310. For example, the first substrate 1310 may be moved and positioned appropriately relative to the mask frame 1170 using the mask frame support 1115.

[0679] The film formation apparatus 1100 may also include an exhaust device 1197 for controlling the pressure in the film formation chamber 1190 and a pipe 1196 for introducing a predetermined gas into the film formation chamber 1190 .

[0680] The film formation apparatus 1100 may also have a door valve 1195 that has a function of allowing the first substrate 1310 to be loaded into and unloaded from the film formation chamber 1190. The door valve 1195 can also be used to load and unload the mask frame 1170.

[0681] The film formation apparatus 1100 may further include an evaporation source 1120B in addition to the evaporation source 1120A. The film formation apparatus 1100 may further include a shielding plate 1121A that blocks the film formation material ejected from the evaporation source 1120A. The film formation apparatus 1100 may further include a detector 1122A that detects the amount of the film formation material ejected from the evaporation source 1120A per unit time.

[0682] The sealing chamber SU has a function of bonding, for example, the first base material 1310 and the second base material 1370 with a bonding layer. In this way, the functional layer and the like formed on the surface of the first base material 1310 are protected by the second base material 1370.

[0683] The atomic layer deposition apparatus ALD has a function of depositing a film of various film-forming materials on the surface of the first substrate 1310 having an intricate structure on the surface thereof. For example, the atomic layer deposition apparatus ALD has a function of forming a film having a thickness of 1 nm or more and 200 nm or less on the first substrate 1310.

[0684] For example, if a small hole called a pinhole is formed on the surface of the first base material 1310, the film-forming material can be deposited inside the pinhole to fill it. Therefore, a film formed by the ALD method can be suitably used as a sealing film when sealing a laminated structure including an organic layer, for example.

[0685] The ALD method includes an ALD method using heat (thermal ALD method) and an ALD method using plasma (plasma ALD method). In the thermal ALD method, a precursor is reacted using thermal energy, while in the plasma ALD method, a reactive gas in a radical state is reacted with the precursor. The atomic layer deposition (ALD) apparatus included in the film formation system of one embodiment of the present invention has the function of being able to form films by both the thermal ALD method and the plasma ALD method.

[0686] In a film formation apparatus using the ALD method, source gases for reaction are sequentially introduced into a chamber, and the sequence of gas introduction is repeated to form a film. For example, by switching between the switching valve 1193a connected to the supply source 1181a and the switching valve 1193b connected to the supply source 1181b, multiple source gases can be introduced alternately without mixing. Specifically, the source gas supplied from the supply source 1181a or the supply source 1181b merges with an inert gas (such as argon or nitrogen) at the junction 1182a or the junction 1182b. Therefore, after introducing a first source gas, the switching valve 1193a is closed to introduce only the inert gas, thereby evacuating the first source gas from the chamber. Subsequently, the switching valve 1193b is opened to introduce a second source gas, thereby sequentially supplying two or more source gases to the chamber. Note that the switching valve may also be referred to as a high-speed valve or an ALD valve.

[0687] Alternatively, instead of introducing an inert gas, the first source gas may be discharged by evacuation and then the second source gas may be introduced. The first source gas is adsorbed onto the substrate surface to form a first monoatomic layer, which then reacts with the second source gas introduced later, resulting in the second monoatomic layer being stacked on the first monoatomic layer to form a thin film. By controlling the gas introduction sequence and repeating this process multiple times until the desired thickness is achieved, a thin film with excellent step coverage can be formed. The thickness of the thin film can be adjusted by the number of times the gas introduction sequence is repeated, allowing for precise film thickness adjustment, making this method suitable for fabricating fine structures.

[0688] 44B shows an example of a film formation apparatus (also referred to as an atomic layer deposition apparatus ALD) that uses the ALD method. The atomic layer deposition apparatus ALD has an upper electrode 1188, a shower head 1187, a lower electrode 1186, a heater 1199, and a substrate support 1192 inside a film formation chamber (chamber) 1180. The heater 1199 can be provided inside the lower electrode 1186, and the substrate support 1192 can be formed integrally with the lower electrode 1186. A first substrate 1310 is placed on the substrate support 1192.

[0689] The system also has a supply source 1181a for supplying a precursor and a supply source 1181b for supplying a reactive gas, and the piping connected to these has a switching valve 1193a and a switching valve 1193b, respectively. The switching valve 1193a and the switching valve 1193b have the function of controlling the supply amount of the precursor and reactive gas (hereinafter also referred to as source gas) in pulse time. The piping is also connected to a carrier gas piping, and the source gas and carrier gas are joined at a junction 1182a and a junction 1182b, respectively. The carrier gas may be, for example, argon (Ar), helium (He), or nitrogen (N ２ ) etc. can be used.

[0690] The precursor and reactive gases, together with a carrier gas, are supplied from a raw material inlet 1183a and a raw material inlet 1183b to the film formation chamber 1180. The film formation chamber 1180 is connected to an exhaust device 1185 via a raw material outlet 1184 and a main exhaust valve 1194.

[0691] A power supply 1191 capable of applying high frequency power is connected to the upper electrode 1188 via a capacitor 1189. The upper electrode 1188 and the shower head 1187 may be integrally formed. Source gases introduced from source inlets 1183 a and 1183 b are supplied into the film formation chamber 1180 via the shower head 1187.

[0692] The lower electrode 1186 may be connected to a power source capable of applying a constant potential or high frequency, or may be floating or grounded. Similarly, the substrate support 1192 may be floating or grounded.

[0693] When the thermal ALD method is used, the source gas introduced from the source gas inlet 1183a and the source gas inlet 1183b deposits a precursor adsorbed on the surface of the first substrate 1310 in the film formation chamber 1180 by an adsorption reaction due to heat from a heater, thereby forming a desired film on the surface of the first substrate 1310. When the plasma ALD method is used, the reactive gas is converted into a radical state between the upper electrode 1188 and the lower electrode 1186, and is incident on the surface of the first substrate 1310 due to a potential difference (also referred to as an ion sheath) generated between the upper electrode 1188 and the lower electrode 1186. The radicals then react with the precursor adsorbed on the surface of the first substrate 1310, thereby forming a desired film. In addition to heat, an electric field may be applied to the surface of the first substrate 1310 when the source gas is introduced into the film formation chamber to facilitate precursor adsorption.

[0694] Further, although an example in which two supply sources 1181a and 1181b are provided is shown, there is no particular limitation, and three or more supply sources may be provided.

[0695] The film formation is performed by repeating a cycle of precursor introduction, precursor exhaust, reactant introduction, and reactant exhaust, to form a film having a desired thickness.

[0696] If the device formed on the first substrate 1310 is subject to plasma damage, it is not necessary to use plasma, and it is sufficient to appropriately select the precursor, reaction gas, and temperature to perform the desired film formation.

[0697] In the supply sources 1181a and 1181b, a source gas is formed from a solid source or a liquid source by a vaporizer or a heating means, etc. Alternatively, the supply sources 1181a and 1181b may be configured to supply a gaseous source.

[0698] In the film formation apparatus shown in Figure 44B, the first substrate 1310 is loaded onto the substrate support part 1192, the film formation chamber 1180 is sealed, and then the first substrate 1310 is heated by the heater 1199 to a desired temperature (for example, 80°C or higher, 100°C or higher, or 150°C or higher. Preferably, it is room temperature (27°C) or higher and 100°C or lower), and a thin film is formed on the substrate surface by repeatedly supplying a raw material gas and exhausting the gas by the exhaust device 1185.

[0699] 44B , by appropriately selecting the raw materials (e.g., volatile organometallic compounds) used in the supply sources 1181a and 1181b, an insulating layer containing a nitride, nitride oxide, oxynitride, or oxide containing one or more elements selected from silicon, hafnium, aluminum, tantalum, zirconium, etc. can be formed. Specifically, an insulating layer containing silicon nitride, silicon nitride oxide, or silicon oxide, an insulating layer containing hafnium oxide, an insulating layer containing aluminum oxide, an insulating layer containing hafnium silicate, or an insulating layer containing aluminum silicate can be formed. Furthermore, by appropriately selecting the raw materials (e.g., volatile organometallic compounds) used in the supply sources 1181a and 1181b, a conductive or semiconductor thin film such as a metal layer such as a tungsten layer or a titanium layer, or a nitride layer such as a titanium nitride layer can also be formed.

[0700] For example, when forming a silicon nitride layer using an atomic layer deposition (ALD) system, a source gas obtained by vaporizing a silicon precursor (organosilane, heterosilane) and a reactive gas such as nitrogen or ammonia are used, and the reactive gas is further used as nitrogen radicals obtained in a plasma atmosphere. In the plasma atmosphere, nitrogen or ammonia gas exists in the form of excited atoms / molecules, radicals, or ions. For example, nitrogen plasma containing nitrogen radicals can be generated by applying high frequency waves such as RF or microwaves to nitrogen gas.

[0701] Specific examples of the organic silane include bis(diethylamino)silane (BDEASi), tris(dimethylamino)silane (TDMAS), bis(tert-butylamino)silane (BTBAS), and di(sec-butylamino)silane (DSBAS). Specific examples of the heterosilane include trisilamine (TSA) and neopentasilane (NPS). Other known materials (organosilanes, heterosilanes) can be appropriately selected depending on the film formation temperature conditions.

[0702] Note that an oxidizing agent (e.g., water, oxygen, or ozone) may be mixed into the reactive gas used to form the silicon nitride layer. This allows a silicon nitride oxide layer and a silicon oxynitride layer to be formed. Alternatively, a silicon oxide layer can be formed by using only an oxidizing agent (e.g., water, oxygen, or ozone) as the reactive gas.

[0703] The silicon nitride layer thus formed contains silicon (Si) and nitrogen (N) as its main components, the silicon nitride oxide layer contains silicon (Si), nitrogen (N) and oxygen (O), the silicon oxynitride layer contains silicon (Si), oxygen (O) and nitrogen (N), and the silicon oxide layer contains silicon (Si) and oxygen (O), but also contains trace amounts of carbon (C) and hydrogen (H). Note that the proportion of the main components refers to 70% or more.

[0704] Furthermore, for example, when a hafnium oxide layer is formed by atomic layer deposition (ALD), a source gas obtained by vaporizing a liquid containing a solvent and a hafnium precursor compound (hafnium alkoxide and hafnium amide such as tetrakisdimethylamidohafnium (TDMAH)) and ozone (O ３ In this case, the first source gas supplied from the supply source 1181a is TDMAH, and the second source gas supplied from the supply source 1181b is ozone. The chemical formula of tetrakisdimethylamidohafnium is Hf[N(CH ３ ) ２ ] ４ Other liquid materials include tetrakis(ethylmethylamido)hafnium.

[0705] Furthermore, for example, when an aluminum oxide layer is formed by atomic layer deposition (ALD), a source gas obtained by vaporizing a liquid containing a solvent and an aluminum precursor compound (e.g., trimethylaluminum (TMA)) and H as an oxidizer are used. ２ In this case, the first source gas supplied from the supply source 1181a is TMA, and the second source gas supplied from the supply source 1181b is H. ２ The chemical formula for trimethylaluminum is Al(CH ３ ) ３ Other material liquids include tris(dimethylamido)aluminum, triisobutylaluminum, and aluminum tris(2,2,6,6-tetramethyl-3,5-heptanedionate).

[0706] Furthermore, for example, when a tungsten layer is formed by atomic layer deposition (ALD), WF ６ Gas and B ２ H ６ The gases are introduced repeatedly to form an initial tungsten layer, and then WF ６ Gas and H ２ The gases are introduced repeatedly in sequence to form a tungsten layer. ２ H ６ Instead of gas, SiH ４ Gases may be used, and the device may be configured so that these gases are controlled by a mass flow controller.

[0707] <<First Base Material 1310>> The first base material 1310 is not particularly limited as long as it has heat resistance sufficient to withstand the manufacturing process and a thickness and size that are applicable to a manufacturing apparatus.

[0708] The first substrate 1310 may also include various functional layers. For example, functional circuits, functional elements, optical elements, functional films, etc., or layers containing a plurality of these may be used. Specifically, pixel circuits, pixel drive circuits, display elements, color filters, moisture-proof films, etc., of known display devices, or layers containing a plurality of these may be used.

[0709] The first base material 1310 can be made of a material including an organic material, an inorganic material, or a composite material of an organic material and an inorganic material.

[0710] For example, inorganic materials such as glass, silicon, ceramics, or metals can be used for the first substrate 1310 .

[0711] Specifically, alkali-free glass, soda-lime glass, crystal glass, silicon, or the like can be used for the first base material 1310 .

[0712] Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, silicon, or the like can be used for the first base material 1310. For example, silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, silicon, or the like can be used for the first base material 1310.

[0713] Alternatively, the first base material 1310 can be made of an organic material such as a resin, a resin film, or a plastic.

[0714] Specifically, a resin film or plate made of polyester, polyolefin, polyamide, polyimide, polycarbonate, acrylic resin, or the like can be used for first base material 1310 .

[0715] For example, the first base material 1310 can be a thin glass plate or a composite material in which a film of an inorganic material or the like is attached to a resin film or the like.

[0716] For example, the first base material 1310 can be a composite material in which fibrous or particulate metal, glass, inorganic material, or the like is dispersed in a resin film.

[0717] For example, the first base material 1310 can be a composite material in which fibrous or particulate resin or an organic material is dispersed in an inorganic material.

[0718] Furthermore, a single-layer material or a laminated material in which multiple layers are stacked can be used for the first base material 1310. For example, a laminated material in which an insulating layer or the like that prevents diffusion of impurities contained in the material is stacked can be used for the first base material 1310.

[0719] Specifically, a laminated material made of glass and one or more films selected from a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or the like that prevent the diffusion of impurities contained in the glass can be applied to the first substrate 1310.

[0720] <<Mask Frame Supporting Section 1115>> The mask frame supporting section 1115 has a function of supporting the mask frame 1170. The mask frame supporting section 1115 may also have a function of moving the mask frame relatively to the deposition source 1120A.

[0721] For example, a structure for gripping or supporting the vicinity of the end of the mask frame 1170 can be used for the mask frame support portion 1115. Specifically, a member with a clamping mechanism or an L-shaped or other supporting member can be used. Furthermore, a plurality of structures for gripping or supporting the mask frame 1170 may be provided. Specifically, when the mask frame 1170 has a rectangular shape, the vicinity of the four corners of the mask frame 1170 may be supported.

[0722] When the mask frame support 1115 is moved relative to the evaporation source 1120A, for example, a power source 1140 can be used. Specifically, a servo motor, a stepping motor, or an air cylinder can be used to move the mask frame support 1115. Specifically, the mask frame support 1115 can be rotated above the evaporation source 1120A or passed across above the evaporation source 1120A.

[0723] <<Mask Frame 1170>> The mask frame 1170 has a shielding region that functions to block the film-forming material, and an opening region surrounded by the shielding region.

[0724] The deposition apparatus 1100 includes one or more deposition sources, such as a deposition source 1120A and a deposition source 1120B.

[0725] The same material may be ejected from the evaporation source 1120 A and the evaporation source 1120 B. This allows the thickness of the film material deposited on the surface of the first base material 1310 per unit time to be increased.

[0726] Different materials may be ejected from the evaporation source 1120A and the evaporation source 1120B. This allows a film containing a mixture of different materials to be formed on the surface of the first base material 1310. In other words, co-evaporation can be performed.

[0727] The evaporation source 1120A has a function of ejecting a film formation material. For example, it is preferable that the evaporation source 1120A has directivity in the ejection direction of the film formation material. This can improve the use efficiency of the film formation material.

[0728] Specifically, a point-source evaporation source or a linear-source evaporation source can be used as the evaporation source 1120A. Alternatively, an evaporation source in which point sources are arranged in a line or a matrix, or an evaporation source in which vaporized film formation material is ejected from a slit can be used.

[0729] The film formation apparatus 1100 may also have a function of moving the evaporation source 1120A relatively to the substrate support unit 1192. For example, a film may be formed while the evaporation source 1120A is scanned over the first substrate 1310 using a power source.

[0730] <<Film Forming Chamber 1190>> The film forming chamber 1190 can reduce the internal pressure to below atmospheric pressure. −３ Pa or less.

[0731] The exhaust device 1197 can reduce the pressure inside the film formation chamber 1190. For example, a mechanical pump, a turbo pump, a cryopump, or the like can be used as the exhaust device 1197.

[0732] The film formation chamber 1190 can be filled with gas, and a pipe 1196 can supply, for example, nitrogen gas to the film formation chamber.

[0733] The film formation chamber 1190 may be provided with a function for heating the inner wall, thereby efficiently desorbing molecules adsorbed on the inner wall. For example, a heater or a pipe for supplying a heat medium may be provided on the wall.

[0734] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0735] ANO: conductive film, C21: capacitor, C22: capacitor, CP: conductive material, DU: display unit, ELA: light, ELB: light, ELC: light, ELX: light, GD: drive circuit, M21: transistor, N21: node, N22: node, REF: reflective film, REFA: reflective film, REFB: reflective film, REFC: reflective film, RES: resist, SCRB: layer, SCRC: layer, SD: drive circuit, SENS: sensor, SW21: switch, SW22: switch, SW23: switch, LD: carry-in device, SU: sealing chamber, ULD: carry-out device, 14b: substrate, 16b: substrate, 17: substrate, 18 : substrate, 37b: display unit, 61B: light-emitting device, 61G: light-emitting device, 61R: light-emitting device, 61W: light-emitting device, 63B: light-emitting device, 63G: light-emitting device, 63R: light-emitting device, 63W: light-emitting device, 80: display area, 81B: light, 81G: light, 81R: light, 71: substrate, 73: substrate, 83B: light, 83G: light, 83R: light, 100A: display device, 100B: display device, 100C: display device, 100D: display device, 100E: display device, 100F: display device, 100G: display device, 100H: display device, 100I: display device, 10 0J: display device, 100K: display device, 100L: display device, 100M: display device, 100: display device, 103A: unit, 103a: laminated film, 103AB: gap, 103AS: side, 103B: unit, 103b: laminated film, 103BS: side, 103C: unit, 103c: laminated film, 103X: unit, 104A: layer, 104a: film, 104B: layer, 104b: film, 104C: layer, 104c: film, 104X: layer, 105A: layer, 105B: layer, 105C: layer, 105X: layer, 105: layer, 106A: intermediate layer, 106B: intermediate layer, 106X: middle Interlayer, 107: display section, 111X: layer, 112X: layer, 113X: layer, 117: light-shielding layer, 120: substrate, 122: adhesive layer, 140: connection section, 142: adhesive layer, 153: insulating layer, 156: adhesive layer, 162: insulating layer, 164: circuit, 165: wiring, 166: conductive layer, 168: conductive layer, 171: conductive layer, 172B: EL layer, 172G: EL layer, 172R: EL layer, 173: conductive layer, 174: common layer, 176: IC, 177: FPC, 183B: colored layer, 183G: colored layer, 183R: colored layer, 201: transistor, 204: connection section, 205: transistor,209: transistor, 210: transistor, 211: insulating layer, 213: insulating layer, 214: insulating layer, 215: insulating layer, 218: insulating layer, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 225: insulating layer, 231i: channel formation region, 231n: low resistance region, 231: semiconductor layer, 240: capacitor, 241: conductive layer, 242: connection layer, 243: insulating layer, 245: conductive layer, 251: conductive layer, 252: conductive layer, 254: insulating layer, 255a: insulating layer, 255b: insulating layer, 255c: insulating layer, 256: plug, 261: insulating layer, 262: insulating layer Edge layer, 263: insulating layer, 264: insulating layer, 265: insulating layer, 270: sacrificial layer, 270B: sacrificial layer, 270G: sacrificial layer, 270R: sacrificial layer, 271: protective layer, 272: insulating layer, 273: protective layer, 274a: conductive layer, 274b: conductive layer, 274: plug, 275: plug, 276: gap, 280: display module, 290: FPC, 301A: substrate, 301B: substrate, 301: substrate, 310A: transistor, 310B: transistor, 310: transistor, 311: conductive layer, 312: low resistance region, 313: insulating layer, 314: insulating layer, 315: element isolation layer, 320A: transistor, 320B: transistor, 320: transistor, 321: semiconductor layer, 323: insulating layer, 324: conductive layer, 325: conductive layer, 326: insulating layer, 327: conductive layer, 328: insulating layer, 329: insulating layer, 331: substrate, 332: insulating layer, 335: insulating layer, 336: insulating layer, 341: conductive layer, 342: conductive layer, 343: plug, 344: insulating layer, 345: insulating layer, 346: insulating layer, 347: bump, 348: adhesive layer, 510: substrate, 519B: terminal, 520: functional layer, 521: insulating layer, 529_2: insulating layer, 529A: opening, 529B : opening, 529: insulating layer, 530A: pixel circuit, 530B: pixel circuit, 530C: pixel circuit, 540: functional layer, 550A: light-emitting device, 550B: light-emitting device, 550C: light-emitting device, 550X: light-emitting device, 551A: electrode, 551AB: gap, 551AS: side surface, 551B: electrode, 551BS: side surface, 551C: electrode, 551X: electrode, 551: conductive film, 552A: electrode, 552B: electrode, 552C: electrode, 552X: electrode, 552: conductive layer, 573: insulating layer, 591A: opening, 591B: opening, 700: display device, 702A: pixel,702B: pixel, 702C: pixel, 703: pixel, 731: display region, 732: sealing region, 1000A: film formation system, 1000B: film formation system, 1000: main film formation system, 1100A: film formation apparatus, 1100B: film formation apparatus, 1100C: film formation apparatus, 1100D: film formation apparatus, 1100E: film formation apparatus, 1100: film formation apparatus, 1101A: treatment chamber, 1101B: treatment chamber, 1101: treatment chamber, 1110a: film formation line, 1110b: film formation line, 1110: film formation line, 1111: film formation line, 1112: film formation line, 1115: mask frame support part, 11 20A: evaporation source, 1120B: evaporation source, 1121A: shielding plate, 1122A: detector, 1140: power source, 1170: mask frame, 1180: film formation chamber, 1181a: supply source, 1181b: supply source, 1182a: junction, 1182b: junction, 1183a: raw material inlet, 1183b: raw material inlet, 1184: raw material outlet, 1185: exhaust device, 1186: lower electrode, 1187: shower head, 1188: upper electrode, 1189: capacitor, 1190: film formation chamber, 1191: power source, 1192: substrate support, 1193a: switching valve, 1193b: switching valve 1194: exhaust main valve, 1195: door valve, 1196: piping, 1197: exhaust device, 1198: detector, 1199: heater, 1310: first base material, 1370: second base material, 6500: electronic device, 6501: housing, 6502: display unit, 6503: power button, 6504: button, 6505: speaker, 6506: microphone, 6507: camera, 6508: light source, 6510: protective member, 6511: display panel, 6512: optical member, 6513: touch sensor panel, 6515: FPC, 6516: IC, 6517: printed circuit board, 6518: Battery, 6700A: Electronic device, 6700B: Electronic device, 6721: Housing, 6723: Wearing section, 6727: Earphone section, 6750: Earphone, 6751: Display panel, 6753: Optical member, 6756: Display area, 6757: Frame, 6758: Nose pad, 6800A: Electronic device, 6800B: Electronic device, 6820: Display section, 6821: Housing, 6822: Communication section, 6823: Wearing section, 6824: Control section, 6825: Imaging section, 6827: Earphone section, 6832: Lens, 7000: Display section, 7100: Television device, 7101: Housing,7103: Stand, 7111: Remote control device, 7200: Notebook personal computer, 7211: Housing, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Housing, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal, 9000: Housing, 90 01: display unit, 9002: camera, 9003: speaker, 9005: operation keys, 9006: connection terminal, 9007: sensor, 9008: microphone, 9050: icon, 9051: information, 9052: information, 9053: information, 9054: information, 9055: hinge, 9101: mobile information terminal, 9102: mobile information terminal, 9103: tablet terminal, 9200: mobile information terminal, 9201: mobile information terminal,

Claims

a first light emitting device; and a second light emitting device; and A first insulating layer, the first light emitting device comprises a first electrode, a second electrode and a first unit; the first unit is sandwiched between the first electrode and the second electrode; the first unit comprises a first side; the first unit includes a luminescent material; the second light emitting device comprises a third electrode, a fourth electrode and a second unit; the third electrode is adjacent to the first electrode; a first gap is provided between the first electrode and the third electrode; the second unit is sandwiched between the third electrode and the fourth electrode; the second unit includes a second side; the second side surface faces the first side surface, a second gap is provided between the second unit and the first unit; the second gap overlaps the first gap; the second unit includes a luminescent material; the first insulating layer is in contact with the first side surface and the second side surface; the first insulating layer has a thickness that is 0.35 times or more and 0.5 times or less the width of the second gap; The first insulating layer comprises silicon and nitrogen. 　 the first insulating layer between the first light emitting device and the second light emitting device; The display device of claim 1 , wherein the first insulating layer comprises silicon and nitrogen.

2. The display device according to claim 1, wherein the first insulating layer is a layer in which a layer containing silicon and nitrogen and a layer containing silicon and oxygen are stacked. 　 The display device according to claim 1 , wherein the second gap is equal to or greater than 20 nm and equal to or less than 100 nm. 　 A conductive layer is provided. the first insulating layer includes a first opening and a second opening; the first opening overlaps the first electrode; the second opening overlaps the third electrode; the conductive layer covers the first opening and the second opening; the conductive layer overlaps the second gap; The display device according to claim 1 , wherein the conductive layer electrically connects the second electrode and the fourth electrode. 　 the first electrode has an outer diameter smaller than an outer diameter of the first unit; the first electrode having a third side; the third electrode has an outer shape smaller than an outer shape of the second unit; the third electrode having a fourth side; The display device according to claim 1 , wherein the first insulating layer contacts the first side surface, the second side surface, the third side surface, and the fourth side surface. 　 A display area; A sealing region; A second insulating layer; a third insulating layer; the display area includes the first light emitting device and the second light emitting device; The sealing region surrounds the display region, the second insulating layer overlaps with the third insulating layer in the display region; the second insulating layer sandwiches the first light emitting device and the second light emitting device between the second insulating layer and the third insulating layer in the display region; the second insulating layer is in contact with the third insulating layer in the sealing region; the second insulating layer comprises silicon and nitrogen; The display device according to claim 1 , wherein the third insulating layer contains silicon and nitrogen or oxygen.

8. The display device according to claim 7, wherein the second insulating layer is a layer in which a layer containing silicon and nitrogen and a layer containing silicon and oxygen are stacked. 　 A display device according to any one of claims 1 to 8, A display module having at least one of a connector and an integrated circuit. 　 A display device according to any one of claims 1 to 8, An electronic device having at least one of a battery, a camera, a speaker, and a microphone.