Light-emitting device and light-emitting module

Abstract

Provided is a compact light-emitting device. This light-emitting device includes: a base body having a base part having a first upper surface, and a frame part having a second upper surface; a semiconductor laser element arranged on the first upper surface and emitting light of a far field pattern of an elliptical shape; and a lid body having an upper surface, a lower surface joined to the second upper surface, and a cylindrical lens surface formed so as to be recessed to the upper surface side on the lower surface side. The semiconductor laser element is arranged in a sealing space surrounded by the base body and the lid body. The lid body further diffuses the fast axis direction of light that is emitted from the semiconductor laser element and incident on the cylindrical lens surface, and causes the light to be emitted from the upper surface.

Description

Light emitting device and light emitting module

[0001] The present invention relates to a light emitting device and a light emitting module.

[0002] Japanese Patent Application Laid-Open No. 2019-212752 discloses a light-emitting device having a semiconductor laser element, a package, and a lens member, in which the semiconductor laser element is disposed within a sealed space of the package, and the lens member is bonded to the package outside the sealed space of the package.

[0003] JP 2019-212752 A

[0004] An invention is disclosed that solves the problem of realizing a small light emitting device.

[0005] The light emitting device disclosed in the embodiment includes a substrate having a base having a first upper surface and a frame having a second upper surface, a semiconductor laser element disposed on the first upper surface and emitting light in an elliptical far-field pattern, and a lid having an upper surface, a lower surface bonded to the second upper surface, and a cylindrical lens surface formed on the lower surface side so as to be recessed toward the upper surface, wherein the semiconductor laser element is disposed in a sealed space surrounded by the substrate and the lid, and the lid further diffuses the fast axis direction of light emitted from the semiconductor laser element and incident on the cylindrical lens surface, causing the light to be emitted from the top surface.

[0006] Furthermore, the light emitting module disclosed in the embodiment comprises the above-mentioned light emitting device, a first light emitting device that does not have a wavelength plate, a second light emitting device that is the above-mentioned light emitting device and further has a wavelength plate, and a light guide plate into which light emitted from the first light emitting device and light emitted from the second light emitting device enter with their polarization directions aligned.

[0007] In at least one of the one or more inventions disclosed in the embodiments, a small light emitting device can be realized.

[0008] 1. FIG. 3 is a perspective view of light emitting devices according to the first embodiment, the sixth embodiment, and the seventh embodiment. FIG. 4 is a side view of light emitting devices according to the first embodiment, the second embodiment, the sixth embodiment, and the seventh embodiment. FIG. 5 is a cross-sectional view of the light emitting device according to the first embodiment, taken along line III-III in FIG. 1. FIG. 6 is a cross-sectional view of the light emitting devices according to the first embodiment, the sixth embodiment, and the seventh embodiment, taken along line IV-IV in FIG. 1. FIG. 7 is a top view of the light emitting devices according to the first and second embodiments, with the lid seen through. FIG. 8 is an enlarged view of the rectangular dashed line portion in FIG. 3. FIG. 9 is a view for explaining an example of an optical path of light in the light emitting device according to the first embodiment. FIG. 10 is a view for explaining another example of an optical path of light in the light emitting device according to the first embodiment. FIG. 11 is a perspective view of the lid according to each embodiment except the sixth embodiment, as seen from the side where the lens surface is provided. FIG. 12 is a top view of the lid according to each embodiment except the sixth embodiment, as seen from the side where the lens surface is provided. FIG. 13 is a perspective view showing the internal structure of a package of a light emitting device according to each embodiment except the seventh embodiment. FIG. 14 is a top view showing the internal structure of a package of a light emitting device according to each embodiment except the seventh embodiment. FIG. 15 is a bottom view of the package according to each embodiment. FIG. 16 is a top view showing the arrangement of a semiconductor laser element and a submount according to each embodiment. FIG. 10 is a side view showing the arrangement of the semiconductor laser element and the submount according to each embodiment. FIG. 11 is a cross-sectional view of the light emitting device according to the second embodiment. FIG. 12 is a perspective view of the light emitting device according to the third embodiment. FIG. 13 is a cross-sectional view of the light emitting device according to the third embodiment. FIG. 14 is a top view of the light emitting device according to the fourth embodiment. FIG. 15 is a cross-sectional view of the light emitting device according to the fourth embodiment. FIG. 16 is a schematic view of the light emitting module according to the fifth embodiment. FIG. 17 is a cross-sectional view of the light emitting device according to the sixth embodiment. FIG. 18 is a view showing the light intensity distribution of the first light of the light emitting device according to the sixth embodiment. FIG. 19 is a view showing the light intensity distribution of the second light of the light emitting device according to the sixth embodiment. FIG. 19 is a view showing the light intensity distribution of the light emitted from the light emitting device according to the sixth embodiment, which is more uniform. FIG. 19 is a cross-sectional view of the light emitting device according to the seventh embodiment.

[0009] In this specification and claims, polygons such as triangles and quadrilaterals are referred to as polygons, including shapes in which the corners of the polygons have been rounded, chamfered, corner-cut, rounded, etc. Furthermore, shapes in which processing has been applied not only to the corners (edges of the sides) but also to the middle portions of the sides are also referred to as polygons. In other words, shapes in which partial processing has been applied while retaining the polygonal base are included in the interpretation of "polygon" described in this specification and claims.

[0010] The same applies to words that describe specific shapes, such as trapezoids, circles, and irregularities, not just polygons. The same also applies when dealing with the sides that form the shape. In other words, even if the corners or middle part of a side are processed, the interpretation of "side" includes the processed part. Note that when distinguishing a "polygon" or "side" that has no processing from a processed shape, the word "strict" is added, for example, "strict quadrangle."

[0011] Furthermore, in this specification or the claims, descriptions such as up and down (upper / lower), left and right, front and back, front and back (front / rear), front and back, etc. merely describe relationships such as relative positions, orientations, directions, etc., and do not necessarily correspond to the relationships during use.

[0012] In the drawings, directions such as the X direction, Y direction, and Z direction may be indicated using arrows. The directions of these arrows are consistent among multiple drawings relating to the same embodiment. In the drawings, the direction of an arrow marked with X, Y, and Z is the positive direction, and the opposite direction is the negative direction. For example, a direction marked with X at the end of an arrow is the X direction and the positive direction. In this specification, a direction that is the X direction and the positive direction is referred to as the "positive X direction," and the opposite direction is referred to as the "negative X direction." When referring to the "X direction," it is intended to include both the positive and negative directions. The same applies to the Y direction and the Z direction.

[0013] Furthermore, in this specification, when a certain object is described by specifying "one or more," both the form in which there is one object and the form in which there is more than one object are described together. Therefore, the description specifying "one or more" supports any of the following embodiments: an embodiment including one or more objects, an embodiment including at least one object, and an embodiment including more than one object.

[0014] Furthermore, in this specification, a description of "one or each" object is a description that compiles a description of one object in an embodiment that includes one object, a description of one object in an embodiment that includes multiple objects, and a description of each of the multiple objects in an embodiment that includes multiple objects. Therefore, a description of "one or each" object supports all of the following: in an embodiment that includes one object, this one object has the explanatory content; in an embodiment that includes multiple objects, at least one of these objects has the explanatory content; in an embodiment that includes multiple objects, each of these multiple objects has the explanatory content; and in an embodiment that includes one or multiple objects, all of the objects have the explanatory content.

[0015] Furthermore, in this specification, the terms "component" and "part" may be used when describing components, for example. A "component" refers to an object that is handled physically as a single unit. An object that is handled physically as a single unit can also be said to be an object that is handled as a single component in the manufacturing process. On the other hand, a "part" refers to an object that does not need to be handled physically as a single unit. For example, the term "part" is used when referring to a portion of a single component, or when referring to multiple components collectively as a single object.

[0016] The distinction between "component" and "part" above does not indicate a conscious intention to limit the scope of rights in the interpretation of the doctrine of equivalents. In other words, even if a component is described as a "component" in the claims, this does not mean that the applicant recognizes that treating this component as a single physical unit is essential for the application of the present invention.

[0017] Furthermore, in this specification or claims, when there are multiple elements of a certain type and they need to be distinguished from one another, the elements may be prefixed with "first" or "second." Furthermore, the objects distinguished between the specification and the claims may differ. Therefore, even if the claims describe elements with the same prefixes as the specification, the objects identified by these elements may not be the same between the specification and the claims.

[0018] For example, if there are elements in this specification that are distinguished by the notation "first," "second," and "third," and the elements marked with "first" and "third" in this specification are described in the claims, the elements may be distinguished by the notation "first" and "second" in the claims for ease of reading. In this case, the elements marked with "first" and "second" in the claims refer to the elements marked with "first" and "third" in this specification, respectively. Note that this rule is not limited to elements, and can be applied rationally and flexibly to other objects as well.

[0019] Hereinafter, embodiments for carrying out the present invention will be described. Furthermore, specific embodiments for carrying out the present invention will be described with reference to the drawings. Note that the embodiments for carrying out the present invention are not limited to these specific embodiments. In other words, the illustrated embodiments are not the only embodiments in which the present invention can be realized. Note that the sizes and positional relationships of components shown in each drawing may be exaggerated for ease of understanding.

[0020] First Embodiment A light-emitting device 1 according to a first embodiment will be described. FIGS. 1 to 13 are diagrams illustrating an exemplary embodiment of the light-emitting device 1. FIG. 1 is a perspective view of the light-emitting device 1. FIG. 2 is a side view of the light-emitting device 1. FIG. 3 is a cross-sectional view taken along line III-III in FIG. 1. The rectangular dashed line indicates the enlarged region in FIG. 6A. FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 1. The wiring 60 is omitted from the cross-sectional views of FIGS. 3 and 4. FIG. 5 is a top view of the light-emitting device 1 with the lid 14 visible. The lid 14 is indicated by a dotted line. The hatched portion indicates a region R1, which will be described later. FIG. 6A is an enlarged view of the rectangular dashed-line portion in FIG. 3. FIG. 6B is a diagram illustrating an example of an optical path LP of light in the light-emitting device 1. FIG. 6C is a diagram illustrating another example of an optical path LP of light in the light-emitting device 1. In Figures 6B and 6C, the optical path LP is indicated by a dotted line. A virtual plane passing through the first inner side surface 11E1 of the frame portion 11N and parallel to the first inner side surface 11E1 is indicated by a dashed line. Figure 7 is a perspective view of the lid body 14, seen from the side where the lens surface 14M is provided. Figure 8 is a top view of the lid body 14, seen from the side where the lens surface is provided. In Figures 7 and 8, the optical axis LA of the lens surface 14M is indicated by a dotted line. Figure 9 is a perspective view showing the internal structure of the package of the light-emitting device 1. Figure 10 is a top view showing the internal structure of the package of the light-emitting device 1. Figure 11 is a bottom view of the package 10. Figure 12 is a top view showing the arrangement of the semiconductor laser element 20 and the submount 30. Figure 13 is a side view showing the arrangement of the semiconductor laser element 20 and the submount 30.

[0021] The light emitting device 1 includes a plurality of components, including a package 10, one or more semiconductor laser elements 20, one or more submounts 30, one or more reflecting members 40, one or more protective elements 50, and a plurality of wirings 60.

[0022] The light emitting device 1 may include other components. For example, the light emitting device 1 may include a semiconductor laser element in addition to the one or more semiconductor laser elements 20. The light emitting device 1 may not include some of the components listed here.

[0023] First, each component will be described.

[0024] (Package 10) The package 10 includes a base 11 and a lid 14. The lid 14 is joined to the base 11 to form the package 10. An internal space is defined in the package 10 in which other components are placed. This internal space is a closed space surrounded by the base 11 and the lid 14. This internal space can also be a space sealed in a vacuum or airtight state.

[0025] When viewed from above, the outer edge of the package 10 has a rectangular shape. This rectangle can have a long side and a short side. In the illustrated package 10, the short side of the rectangle is oriented in the same direction as the X direction, and the long side is oriented in the same direction as the Y direction. However, when viewed from above, the outer edge of the package 10 does not have to have a rectangular shape.

[0026] The package 10 defines an internal space in which other components are placed. The first upper surface 11A of the package 10 is part of the area that defines the internal space. In addition, each of the inner side surfaces 11E and the lower surface 14B of the package 10 is also part of the area that defines the internal space.

[0027] The base 11 has a first upper surface 11A and a lower surface 11B. The base 11 has a second upper surface 11C. The base 11 has one or more outer surfaces 11D. The base 11 has one or more inner surfaces 11E. The one or more outer surfaces 11D intersect with the second upper surface 11C. The one or more outer surfaces 11D intersect with the lower surface 11B. The one or more inner surfaces 11E intersect with the second upper surface 11C.

[0028] When viewed from above, the outer edge shape of the base 11 is rectangular. When viewed from above, the outer edge shape of the base 11 is the outer edge shape of the package 10. When viewed from above, the outer edge shape of the first top surface 11A is rectangular. This rectangle can be a rectangle having long sides and short sides. The long side direction of the first top surface 11A and the long side direction of the outer edge shape of the base 11 are parallel. Note that when viewed from above, the outer edge shape of the first top surface 11A does not have to be rectangular.

[0029] In a top view, the first top surface 11A is surrounded by the second top surface 11C. The second top surface 11C is an annular surface that surrounds the first top surface 11A in a top view. The second top surface 11C is a rectangular annular surface. Here, the frame defined by the inner edge of the second top surface 11C is referred to as the inner frame of the second top surface 11C, and the frame defined by the outer edge of the second top surface 11C is referred to as the outer frame of the second top surface 11C.

[0030] The base 11 has a recess surrounded by a frame by the second top surface 11C. The recess defines a portion of the base 11 that is recessed below the second top surface 11C. The first top surface 11A is a part of the recess. One or more inner surfaces 11E are also a part of the recess. The second top surface 11C is located above the first top surface 11A.

[0031] The base 11 has one or more step portions 11F. The step portion 11F has an upper surface 11G and a side surface 11H that intersects with the upper surface 11G and extends downward from the upper surface 11G. Here, one step portion 11F has only one upper surface 11G and one side surface 11H. The upper surface 11G intersects with the inner surface 11E. The side surface 11H intersects with the first upper surface 11A.

[0032] One or each step portion 11F is provided inside the inner frame of the second upper surface 11C in top view. One or each step portion 11F is formed along part or all of the inner surface 11E in top view. In the base 11, the side surface 11H is an inner surface, but the side surface 11H and the inner surface 11E are different surfaces. One or each inner surface 11E and one or each side surface 11H are perpendicular to the first upper surface 11A. Here, the perpendicular allows for a difference of ±3 degrees.

[0033] The one or more step portions 11F may include a first step portion 11F1 and a second step portion 11F2. The first step portion 11F1 and the second step portion 11F2 are provided at positions where their respective side surfaces 11H face each other. The first step portion 11F1 and the second step portion 11F2 are provided on the short side of the inner frame of the second upper surface 11C.

[0034] The base 11 has a base portion 11M and a frame portion 11N. The base portion 11M and the frame portion 11N may be made of different materials. The base 11 may be configured to include a base member corresponding to the base portion 11M and a frame member corresponding to the frame portion 11N.

[0035] The base portion 11M includes a first upper surface 11A. The frame portion 11N includes a second upper surface 11C. The frame portion 11N includes one or more outer surfaces 11D and one or more inner surfaces 11E. The frame portion 11N includes one or more step portions 11F.

[0036] The lower surface of the base 11M constitutes a part or all of the area of ​​the lower surface 11B of the base 11. When the lower surface of the base 11M constitutes a part of the area of ​​the lower surface 11B of the base 11, the lower surface of the frame 11N constitutes the remaining area of ​​the lower surface 11B of the base.

[0037] The base 11 has a plurality of wiring portions 12A. The plurality of wiring portions 12A include one or more first wiring portions 12A1 disposed in the internal space of the package 10 and one or more second wiring portions 12A2 provided on the outer surface of the package 10.

[0038] One or each first wiring portion 12A1 is provided on the upper surface 11G of the stepped portion 11F. The base 11 has one or more first wiring portions 12A1 provided on the upper surface 11G of the first stepped portion 11F1. The base 11 has one or more first wiring portions 12A1 provided on the upper surface 11G of the second stepped portion 11F2.

[0039] One or each second wiring portion 12A2 is provided on the lower surface 11B of package 10. One or each second wiring portion 12A2 is provided on the lower surface of frame portion 11N. Note that second wiring portion 12A2 may be provided on an outer surface of package 10 that is different from lower surface 11B.

[0040] When viewed from above, the base 11 has one or more second wiring portions 12A2 provided on the lower surface 11B of the base 11 in the region that includes the upper surface 11G of the first step portion 11F1 when the base 11 is divided into two regions by a virtual line that passes through the side surface 11H of the first step portion 11F1 and is parallel to this side surface 11H.

[0041] When viewed from above, the base 11 has one or more second wiring portions 12A2 provided on the lower surface 11B of the base 11 in the region that includes the upper surface 11G of the second step portion 11F2 when the base 11 is divided into two regions by a virtual line that passes through the side surface 11H of the second step portion 11F2 and is parallel to this side surface 11H.

[0042] In the base 11, one or each of the first wiring portions 12A1 is electrically connected to a second wiring portion 12A2. One or more of the first wiring portions 12A1 are electrically connected to different second wiring portions 12A2.

[0043] The base 11 has a bonding pattern 13A. The bonding pattern 13A is provided on the second upper surface 11C. The bonding pattern 13A is provided in a ring shape. The bonding pattern 13A is provided in a rectangular ring shape. In a top view, the first upper surface 11A is surrounded by the bonding pattern 13A.

[0044] The base 11 can be formed, for example, using ceramic as the main material. Examples of the ceramic that can be the main material of the base 11 include aluminum nitride, silicon nitride, aluminum oxide, and silicon carbide.

[0045] Here, the term "main material" refers to the material that accounts for the largest proportion of the mass or volume of the target structure. Note that when the target structure is formed from a single material, that material is the main material. In other words, when a material is the main material, it includes the possibility that the proportion of that material can be 100%.

[0046] The base 11 may be formed using a base member and a frame member formed using different main materials. The base member may be formed using, for example, a material with excellent heat dissipation properties, such as a metal or a metal-containing composite, graphite, or diamond, as its main material. Examples of metals that serve as the main material of the base member include copper, aluminum, or iron. Examples of metal-containing composites that serve as the main material of the base member include copper-molybdenum and copper-tungsten. The frame member may be formed using, for example, the ceramics listed above as the main material of the base 11 as its main material.

[0047] The wiring portion 12A can be formed, for example, using a metal material as the main material. Examples of the metal material that can be the main material of the wiring portion 12A include elemental metals such as Cu, Ag, Ni, Au, Ti, Pt, Pd, Cr, and W, or alloys containing these metals. The wiring portion 12A can be configured, for example, with one or more metal layers.

[0048] The bonding pattern 13A can be formed, for example, using a metal material as the main material. Examples of the metal material that can be the main material of the bonding pattern 13A include elemental metals such as Cu, Ag, Ni, Au, Sn, Ti, and Pd, or alloys containing these metals. The bonding pattern 13A can be formed, for example, by one or more metal layers.

[0049] The lid 14 has an upper surface 14A, a lower surface 14B, and a lens surface 14M. The lid 14 also has one or more side surfaces 14C. The lid 14 is configured in the shape of a rectangular parallelepiped flat plate with a lens surface on one surface. The outer edge shape of the lid 14 when viewed from above is rectangular. This rectangle can be a rectangle with long and short sides. When viewed from above, the long side direction of the outer edge shape of the lid 14 and the long side direction of the outer edge shape of the base 11 are parallel. Note that the outer edge shape of the lid 14 does not have to be rectangular when viewed from above.

[0050] The lens surface 14M of the cover 14 is formed on the lower surface 14B side. The lens surface 14M is formed to be recessed toward the upper surface 14A side. The lens surface 14M is formed above an imaginary plane that includes and is parallel to the lower surface 14B. The lens surface 14M is a concave lens surface that is recessed upward from the lower surface 14B.

[0051] Lens surface 14M is a cylindrical lens surface. Therefore, lens surface 14M has no curvature in a specific direction. In other words, lens surface 14M has zero curvature in this specific direction. Note that lens surface 14M does not necessarily have to be a cylindrical lens surface that has no curvature in a specific direction in the strict sense. Due to manufacturing, it is possible for the lens surface 14M to have a slight curvature in this specific direction. In the illustrated lens surface 14M of the cover 14, the direction in which the lens surface 14M has substantially no curvature is the same as the X direction.

[0052] Lens surface 14M has a curvature in a first direction. Lens surface 14M does not have a curvature in a second direction perpendicular to the first direction. Lens surface 14M has a curvature in the long side direction of lid body 14. Lens surface 14M does not have a curvature in the short side direction of lid body 14. In the illustrated lid body 14, the first direction is the same as the Y direction, and the second direction is the same as the X direction. Note that lens surface 14M may have a curvature in the second direction.

[0053] Here, the optical axis of the curved lens surface in the first direction on lens surface 14M is referred to as the optical axis LA of the lens on lens surface 14M. On a cylindrical lens surface, the optical axis LA of the lens appears as a straight line extending in the second direction. In other words, any point on this straight line may be referred to as the optical axis LA of the lens.

[0054] The point on lens surface 14M that passes through the optical axis LA of the lens is located at the top. Lens surface 14M is formed in a shape that is recessed upward in lid body 14. The thickness of lid body 14 is at its thinnest at the optical axis LA of lens surface 14M.

[0055] In the vertical direction, the distance from the bottom surface 14B of the lid 14 to the optical axis of the lens surface 14M is 20% to 60% of the width (thickness) from the top surface 14A to the bottom surface 14B of the lid 14. The greater this distance, the larger the area over which the lens surface 14M is formed, making it easier for light to be incident on the lens surface 14M. If the thickness of the lid 14 is not uniform but varies, the thinner portions may be more susceptible to breakage than the thicker portions. Taking these factors into consideration, the above-mentioned range of 20% to 60% may be an example of an appropriate numerical range for the shape of the lid 14 shown in the figure.

[0056] In the first direction, the width of lens surface 14M of lid body 14 is 30% or more and 80% or less of the width of lid body 14. The larger this width of lens surface 14M, the easier it is for light to be incident on lens surface 14M. On the other hand, the larger this width of lens surface 14M, the lower the overall strength of lid body 14 may be. Taking these factors into consideration, the above-mentioned range of 30% or more and 80% or less may be an example of an appropriate numerical range for the shape of lid body 14 shown in the figure.

[0057] In the second direction, the width of lens surface 14M of lid body 14 is 20% to 70% of the width of lid body 14. The larger this width of lens surface 14M, the easier it is for light to be incident on lens surface 14M. On the other hand, the larger this width of lens surface 14M, the lower the overall strength of lid body 14 may be. Taking these factors into consideration, the above-mentioned range of 20% to 70% is an example of an appropriate numerical range for the shape of lid body 14 shown in the figure.

[0058] The ratio of the width of lens surface 14M to the width of lid body 14 in the first direction is smaller than the ratio of the width of lens surface 14M to the width of lid body 14 in the second direction. The width of lens surface 14M in the first direction is larger than the width of lens surface 14M in the second direction.

[0059] In top view, the optical axis LA of lens surface 14M does not overlap with the midpoint of the width of lid body 14 in the first direction. In top view, when lid body 14 is divided into two regions by a line that passes through the midpoint of the width of lid body 14 in the first direction and is parallel to the second direction, the optical axis LA of lens surface 14M is located in one of the regions. Furthermore, when this one region is further divided into two regions by a line that passes through the midpoint of the width of this one region in the first direction and is parallel to the second direction, the optical axis LA of lens surface 14M is located in region R1 that is closer to the midpoint of the width of lid body 14 in the first direction.

[0060] The cover 14 further has one or more first inner surfaces 14D1. One or each of the first inner surfaces 14D1 is connected to the lens surface 14M. One or each of the first inner surfaces 14D1 is connected to the bottom surface 14B. One or each of the first inner surfaces 14D1 does not have an effective lens function. One or each of the first inner surfaces 14D1 is an inner surface extending in the second direction in a top view. One or each of the first inner surfaces 14D1 intersects with a side located at the end of the lens surface 14M in the first direction and extending in the second direction.

[0061] The one or more first inner surfaces 14D1 include a first inner surface 14D1 located at an end of lens surface 14M in the positive Y direction and intersecting with a side extending in the second direction. Furthermore, the one or more first inner surfaces 14D1 include a first inner surface 14D1 located at an end of lens surface 14M in the negative Y direction and intersecting with a side extending in the second direction. For example, if the positive Y direction is defined as the first direction, the negative Y direction can be said to be the direction opposite to the first direction.

[0062] In the vertical direction, the width of the first inner surface 14D1 is more than 0% and not more than 30% of the distance from the bottom surface 14B of the lid 14 to the optical axis LA of the lens surface 14M. As the width of the first inner surface 14D1 increases, the lid 14 becomes thinner, so it may be preferable not to increase this width too much. Alternatively, if an attempt is made to maintain the thickness of the lid 14, the width of the lens surface 14M in the first direction will become smaller. With respect to the shape of the lid 14 shown in the figures, it may be preferable to set the width of the first inner surface 14D1 to 30% or less.

[0063] The or each first inner surface 14D1 extends perpendicularly upward relative to the lower surface 14B, where the perpendicular here includes a difference of ±5 degrees.

[0064] The cover 14 further has two second inner surfaces 14D2. One or each of the second inner surfaces 14D2 is connected to the lens surface 14M. The one or each of the second inner surfaces 14D2 is connected to the optical axis of the lens surface 14M at the outer edge of the lens surface 14M. The one or each of the second inner surfaces 14D2 is connected to the bottom surface 14B. The one or each of the second inner surfaces 14D2 does not have an effective lens function. The one or each of the second inner surfaces 14D2 is an inner surface extending in a first direction when viewed from above.

[0065] One or each second inner surface 14D2 extends obliquely upward relative to the lower surface 14B. The angle formed between the lower surface 14B and the second inner surface 14D2 is an obtuse angle. Therefore, in a top view, the side connecting the second inner surface 14D2 and the lens surface 14M does not overlap the lower surface 14B. The width of the lens surface 14M in the second direction is shortest at a position passing through the optical axis of the lens surface 14M.

[0066] The lid 14 is bonded to the base 11. The lower surface 14B of the lid 14 is bonded to the second upper surface 11C of the base 11. The lid 14 is bonded to the bonding pattern 13A of the base 11. The lid 14 is bonded to the base 11 via an adhesive.

[0067] A portion of lens surface 14M overlaps with second upper surface 11C of base 11 in a top view. A portion of lens surface 14M overlaps with bonding pattern 13A of base 11 in a top view. A portion of the outer edge of lens surface 14M is located inside outer surface 11D and outside inner surface 11E of base 11 in a top view. The width in the first direction of the area where lens surface 14M and second upper surface 11C overlap in a top view is more than 0% and 15% or less of the width of lens surface 14M in the first direction. Restricting this width makes it easier to ensure an area where second upper surface 11C and lower surface 14B are bonded via an adhesive.

[0068] The one or more first inner surfaces 14D1 of the lid 14 include a first inner surface 14D1 that overlaps with the second upper surface 11C in a top view. By providing the first inner surface 14D1, the lens surface 14M does not extend to the lower surface 14B, so that the area where the second upper surface 11C of the base 11 and the lower surface 14B of the lid 14 overlap in a top view can be increased, and poor bonding between the base 11 and the lid 14 can be suppressed. For example, the first inner surface 14D1 can prevent the adhesive used for bonding from reaching the lens surface 14M.

[0069] The one or more inner surfaces 11E of the base 11 include an inner surface 11E that overlaps with the lens surface 14M in top view. There is one inner surface 11E that overlaps with the lens surface 14M in top view. This inner surface 11E will be referred to as a first inner surface 11E1 of the base 11. It can be said that the inner surfaces 11E other than the first inner surface 11E1 do not overlap with the lens surface 14M in top view. Note that the base 11 may have an inner surface 11E that overlaps with the lens surface 14M in top view in addition to the first inner surface 11E1.

[0070] In top view, the lens surface 14M does not overlap the bonding pattern 13A provided on the second top surface 11C. In top view, the first inner side surface 14D1 of the lid 14 does not overlap the bonding pattern 13A.

[0071] The lid 14 has a translucent property that allows light to pass through. Here, translucency means that the transmittance of light incident on the lid 14 is 80% or more. Note that the lid 14 may have a non-translucent region (a region that does not have translucency) in part.

[0072] The lid 14 can be formed, for example, using glass as the main material, or can be formed, for example, using sapphire as the main material.

[0073] The outer edge shape of the base 11 has a width in the first direction greater than the width in the second direction when viewed from above. The inner edge shape of the second upper surface 11C has a width in the first direction greater than the width in the second direction when viewed from above.

[0074] (Semiconductor laser element 20) The semiconductor laser element 20 has an upper surface 21A, a lower surface 21B, and a plurality of side surfaces 21C. The shape of the upper surface 21A is a rectangle having long sides and short sides. The outer shape of the semiconductor laser element 20 when viewed from above is a rectangle having long sides and short sides. However, the shape of the upper surface 21A and the outer shape of the semiconductor laser element 20 when viewed from above are not limited to this.

[0075] The semiconductor laser element 20 has a light emitting surface 22 that emits light. For example, the side surface 21C can serve as the light emitting surface 22. The side surface 21C that serves as the light emitting surface 22 intersects with a short side of the top surface 21A. Alternatively, for example, the top surface 21A can serve as the light emitting surface 22.

[0076] A single-emitter semiconductor laser element having one emitter can be used as the semiconductor laser element 20. Alternatively, a multi-emitter semiconductor laser element having multiple emitters can be used as the semiconductor laser element 20.

[0077] For example, a semiconductor laser element that emits blue light can be used as the semiconductor laser element 20. Alternatively, for example, a semiconductor laser element that emits green light can be used as the semiconductor laser element 20. Alternatively, for example, a semiconductor laser element that emits red light can be used as the semiconductor laser element 20. Note that a semiconductor laser element that emits light of another color or wavelength may also be used as the semiconductor laser element 20.

[0078] Here, blue light refers to light whose peak emission wavelength is in the range of 420 nm to 494 nm, green light refers to light whose peak emission wavelength is in the range of 495 nm to 570 nm, and red light refers to light whose peak emission wavelength is in the range of 605 nm to 750 nm.

[0079] The semiconductor laser element 20 emitting blue light or the semiconductor laser element 20 emitting green light may be a semiconductor laser element containing a nitride semiconductor. Examples of nitride semiconductors that can be used include GaN-based semiconductors such as GaN, InGaN, and AlGaN. The semiconductor laser element 20 emitting red light may be a semiconductor laser element containing InAlGaP-based, GaInP-based, or GaAs-based semiconductors such as GaAs and AlGaAs.

[0080] The semiconductor laser element 20 emits directional laser light. Diverging light with a spreading property is emitted from a light emitting surface 22 (emitting end surface) of the semiconductor laser element 20. The light emitted from the semiconductor laser element 20 forms an elliptical far-field pattern (hereinafter referred to as "FFP") in a plane parallel to the light emitting surface 22. The FFP refers to the shape and light intensity distribution of the emitted light at a position away from the light emitting surface of the semiconductor laser element.

[0081] Here, the light passing through the center of the elliptical shape of the FFP, in other words, the light with the peak intensity in the light intensity distribution of the FFP, is referred to as the light traveling along the optical axis or the light passing through the optical axis. ２ The light having the above intensity is called the main part of the light.

[0082] The FFP of light emitted from the semiconductor laser element 20 has an elliptical shape in a plane parallel to the light emitting surface 22, with the stacking direction being longer than the direction perpendicular to the stacking direction. The stacking direction is the direction in which multiple semiconductor layers including the active layer are stacked in the semiconductor laser element 20. The direction perpendicular to the stacking direction can also be referred to as the in-plane direction of the semiconductor layers. The long axis direction of the elliptical shape of the FFP can also be referred to as the fast axis direction of the semiconductor laser element 20, and the short axis direction can also be referred to as the slow axis direction of the semiconductor laser element 20.

[0083] Based on the light intensity distribution of the FFP, 1 / e of the peak light intensity ２ The angle at which light with a light intensity of 1 / e spreads is defined as the light spread angle of the semiconductor laser element 20. Here, the light spread angle is the angle at which light with a peak light intensity (light passing through the optical axis) spreads relative to 1 / e of the peak light intensity. ２The spread angle of light is expressed as the angle formed by the light having a light intensity of 1 / e of the peak light intensity. ２ In the description of this specification, when simply referring to the "angle of light", it is meant to be 1 / e of the peak light intensity. ２ This refers to the angle of spread of light at a light intensity of 1000 nm.

[0084] The divergence angle of the light emitted from the semiconductor laser element 20 in the fast axis direction can be equal to or greater than 15 degrees and less than 40 degrees. The divergence angle of this light in the slow axis direction can be greater than 0 degrees and less than 10 degrees. The divergence angle of this light in the fast axis direction is larger than the divergence angle of the light in the slow axis direction.

[0085] For example, the divergence angle in the fast axis direction of blue light emitted from the semiconductor laser element 20 can be 15 degrees or more and less than 30 degrees, and the divergence angle in the slow axis direction can be 2 degrees or more and less than 10 degrees. Also, for example, the divergence angle in the fast axis direction of green light emitted from the semiconductor laser element 20 can be 15 degrees or more and less than 30 degrees, and the divergence angle in the slow axis direction can be 2 degrees or more and less than 10 degrees. Also, for example, the divergence angle in the fast axis direction of red light emitted from the semiconductor laser element 20 can be 20 degrees or more and less than 40 degrees, and the divergence angle in the slow axis direction can be 3 degrees or more and less than 10 degrees.

[0086] (Submount 30) The submount 30 has an upper surface 31A, a lower surface 31B, and one or more side surfaces 31C. The upper surface 31A can be considered a mounting surface on which other components are mounted. The shape of the upper surface 31A is rectangular. This rectangle of the upper surface 31A can have short sides and long sides. Note that the shape of the upper surface 31A does not have to be rectangular.

[0087] The outer shape of the submount 30 when viewed from above is rectangular. This rectangle of the submount 30 may have short sides and long sides. However, the outer shape of the submount 30 when viewed from above does not have to be rectangular. When viewed from above, the submount 30 may have an outer shape in which the length in one direction (hereinafter, this direction will be referred to as the short side direction of the submount 30) is shorter than the length in the direction perpendicular to this (hereinafter, this direction will be referred to as the long side direction of the submount 30). In the illustrated submount 30, the short side direction is the same as the X direction, and the long side direction is the same as the Y direction.

[0088] The submount 30 may be configured to include a substrate 32A and an upper metal member 32B. The submount 30 may also be configured to include a lower metal member 32C. The upper metal member 32B is provided on the upper surface of the substrate 32A. The lower metal member 32C is provided on the lower surface of the substrate 32A. The submount 30 further includes a wiring layer 33. The wiring layer 33 is provided on the upper metal member 32B.

[0089] The substrate 32A has insulating properties and is made of, for example, silicon nitride, aluminum nitride, or silicon carbide. It is preferable to select ceramic, which has relatively good heat dissipation properties (high thermal conductivity), as the main material of the substrate 32A.

[0090] The upper metal member 32B is primarily made of a metal such as copper or aluminum. The upper metal member 32B has one or more metal layers. The upper metal member 32B may have multiple metal layers made primarily of different metals.

[0091] The lower metal member 32C is primarily made of a metal such as copper or aluminum. The lower metal member 32C has one or more metal layers. The lower metal member 32C may have multiple metal layers made primarily of different metals.

[0092] The wiring layer 33 can be formed using a metal. For example, the wiring layer 33 can be formed using AuSn solder (a metal layer of AuSn).

[0093] For example, the length of the submount 30 in the short side or lateral direction is 700 μm or more and 1400 μm or less. The length of the submount 30 in the long side or longitudinal direction is 1200 μm or more and 2700 μm or less. The difference between the length of the submount 30 in the longitudinal direction and the length of the submount 30 in the lateral direction is 100 μm or more and 2000 μm or less.

[0094] For example, the thickness of the submount 30 (width in the direction perpendicular to the upper surface 31A) is 200 μm or more and 400 μm or less. Also, for example, the thickness of the substrate 32A is 100 μm or more and 300 μm or less. Also, for example, the thickness of the upper metal member 32B is 25 μm or more and 75 μm or less. Also, for example, the thickness of the lower metal member 32C is 25 μm or more and 75 μm or less. Also, for example, the thickness of the wiring layer 33 is 1 μm or more and 5 μm or less.

[0095] (Reflecting member 40) The reflecting member 40 has a lower surface 41A and a light-reflecting surface 41B that reflects light. The light-reflecting surface 41B is inclined with respect to the lower surface 41A. A line connecting the lower end and upper end of the light-reflecting surface 41B is inclined with respect to the lower surface 41A. The angle at which the light-reflecting surface 41B is inclined with respect to the lower surface 41A is referred to as the inclination angle of the light-reflecting surface 41B.

[0096] The light reflecting surface 41B is a flat surface. However, the light reflecting surface 41B may be a curved surface. The inclination angle of the light reflecting surface 41B is 45 degrees. However, the inclination angle of the light reflecting surface 41B does not have to be 45 degrees.

[0097] The reflecting member 40 can be primarily made of glass, metal, or the like. It is preferable to use a heat-resistant material as the primary material of the reflecting member 40. The primary material can be, for example, glass such as quartz or BK7 (borosilicate glass), or metal such as Al. The reflecting member 40 can also be formed using Si as the primary material.

[0098] If the main material is a reflective material such as Al, the light reflecting surface 41B can be formed from the main material. Instead of forming the light reflecting surface 41B from the main material, the general shape of the reflecting member 40 may be formed from the main material, and the light reflecting surface 41B may be formed on the surface of the general shape. In this case, the light reflecting surface 41B may be formed from a metal layer such as Ag or Al, or a Ta layer, for example. ２ O ５ / SiO ２ , TiO ２ / SiO ２ , Nb ２ O ５ / SiO ２ The dielectric multilayer film can be formed using the above.

[0099] The light reflecting surface 41B has a reflectance of 90% or more for the peak wavelength of light irradiated onto the light reflecting surface 41B. This reflectance may also be 95% or more. This reflectance can also be 99% or more. The light reflectance is 100% or less or less than 100%.

[0100] (Protection Element 50) The protection element 50 has an upper surface 51A, a lower surface 51B, and one or more side surfaces 51C. The shape of the protection element 50 is a rectangular parallelepiped. However, the shape of the protection element 50 does not have to be a rectangular parallelepiped.

[0101] The protective element 50 is intended to prevent a specific element (e.g., a semiconductor laser element) from being destroyed by excessive current flowing through it. An example of the protective element 50 is a Zener diode. The Zener diode may be made of Si.

[0102] (Wiring 60) The wiring 60 is a linear conductive material with joints at both ends. The joints at both ends become joints with other components. The wiring 60 is used for electrical connection between two components. The wiring 60 is, for example, a metal wire. Examples of metals that can be used include gold, aluminum, silver, and copper.

[0103] Next, the light emitting device 1 will be described.

[0104] (Light-emitting device 1) In the light-emitting device 1, one or each semiconductor laser element 20 is disposed on the base 11. One or each semiconductor laser element 20 is disposed on the first upper surface 11A. One or each semiconductor laser element 20 is disposed in the internal space of the package 10. One or each semiconductor laser element 20 is disposed in a sealed space surrounded by the base 11 and the lid 14.

[0105] Light emitted from one or each semiconductor laser element 20 is incident on lens surface 14M of lid 14. The light emitted from semiconductor laser element 20 is incident on lens surface 14M so that the fast axis direction of the light is parallel to a first direction of lens surface 14M. The light emitted from semiconductor laser element 20 is incident on lens surface 14M so that the slow axis direction of the light is parallel to a second direction of lens surface 14M.

[0106] Lens surface 14M has a curvature in the first direction that diffuses light emitted from semiconductor laser element 20 and incident on lens surface 14M. Cover 14 further diffuses the fast-axis direction of light emitted from semiconductor laser element 20 and incident on lens surface 14M, causing the light to exit from top surface 14A. In other words, if the divergence angle in the fast-axis direction of light about to enter lens surface 14M is θ1 and the divergence angle in the fast-axis direction of light exiting top surface 14A is θ2, θ2 is larger than θ1. This allows light to be emitted from light-emitting device 1 at a divergence angle in the fast-axis direction that is larger than the divergence angle of light exiting light exit surface 22 of semiconductor laser element 20.

[0107] θ2 is more than 1.0 and not more than 2.5 times θ1. To diffuse light more, the curvature of the lens increases, and the thickness of the lid 14 at the optical axis of the lens becomes thinner. There is no single definition of how much light is diffused by the lens, but when considering the balance of the strength of the lid 14 and other factors, it may be preferable to set θ2 to 2.5 times or less.

[0108] In the light-emitting device 1, the divergence angle in the fast axis direction of the light emitted from the lid 14 is 1.1 to 2.5 times the divergence angle in the fast axis direction of the light emitted from the semiconductor laser element 20. The divergence angle (θ2) in the fast axis direction of the light emitted from the lid 14 is 38 degrees to 95 degrees.

[0109] For example, the divergence angle (θ2) in the fast axis direction of blue light emitted from the semiconductor laser element 20 and then emitted from the lid 14 can be 38 degrees or more and 95 degrees or less. For example, the divergence angle (θ2) in the fast axis direction of green light emitted from the semiconductor laser element 20 and then emitted from the lid 14 can be 38 degrees or more and 95 degrees or less. For example, the divergence angle (θ2) in the fast axis direction of red light emitted from the semiconductor laser element 20 and then emitted from the lid 14 can be 49 degrees or more and 95 degrees or less.

[0110] Lens surface 14M diffuses the light emitted from semiconductor laser element 20 and incident on lens surface 14M less in the second direction than in the first direction. In other words, if the spread angle in the slow axis direction of the light incident on lens surface 14M is θ3 and the spread angle in the slow axis direction of the light emitted from top surface 14A is θ4, the value obtained by dividing θ4 by θ3 (θ4 / θ3) is smaller than the value obtained by dividing θ2 by θ1 (θ2 / θ1).

[0111] For example, when lens surface 14M has no curvature in the second direction, θ4 and θ3 are equal, and therefore the value of θ4 / θ3 is 1. The value of θ4 / θ3 is preferably equal to or less than 1. Alternatively, light emitted from semiconductor laser element 20 as diverging light may be made narrower by being incident on lens surface 14M, and then emitted from lid 14.

[0112] When using the lens surface 14M to collimate light or focus it at a desired point, precision in the mounting position of the lens surface 14M is required. On the other hand, when realizing a sealed space by bonding the lid body 14 and the base body 11, sufficient adhesion between the base body 11 and the lid body 14 is required to prevent gas from entering. When precision in the mounting position is required, it is preferable to adjust the position, but there are cases where sufficient positional precision cannot be achieved to achieve sufficient adhesion. Providing the lens surface 14M for the purpose of diffusion rather than collimation or focusing at a specific position is compatible with achieving both the realization of a sealed space and lens function in the lid body 14.

[0113] Furthermore, by making the lens surface 14M a cylindrical lens surface, the lens action can be concentrated in a specific direction. For example, the objective is to diffuse light only in the fast axis direction, and optical control in the slow axis direction does not need to be particularly considered. This type of optical control is also compatible with not only realizing a sealed space in the lid 14 but also providing a lens function through the lens surface 14M. Note that the lens surface 14M does not have to be a cylindrical lens surface, and may have a curvature in the second direction for the purpose of suppressing the spread of light, rather than for the purpose of concentrating light at a specific point.

[0114] In light-emitting device 1, the first direction of lens surface 14M and the fast axis direction of light incident on lens surface 14M are parallel, but the parallelism here allows an angle of 5 degrees or more between the first direction and the fast axis direction of light. Furthermore, it is preferable that the parallelism here be 7 degrees or less even if an angle occurs between the first direction and the fast axis direction of light.

[0115] The semiconductor laser element 20 emits light from each of a plurality of emitters. The plurality of emitters includes a first emitter and a second emitter, and the first light is emitted from the first emitter and the second light is emitted from the second emitter. The fast axis directions of the first light and the second light are parallel to each other and aligned in the slow axis direction.

[0116] The cylindrical lens surface is well-suited to such first and second light. Lens surface 14M, which is a cylindrical surface, does not have a curvature in the second direction, and the cross-sectional shape of the lens surface in the first direction is uniform in the second direction. Therefore, the lens effect due to the curvature in the first direction can be applied to the first light and the second light in the same way, without having to consider the positional accuracy of the first light and the second light in the second direction.

[0117] In the light-emitting device 1, one or each semiconductor laser element 20 is disposed on a submount 30. One or each semiconductor laser element 20 is disposed on the first upper surface 11A via the submount 30. The one or each submount 30 is bonded to the first upper surface 11A at the lower surface 31B, and is bonded to the semiconductor laser element 20 at the upper surface 31A. The number of semiconductor laser elements 20 disposed on one submount 30 is one or more.

[0118] One or each semiconductor laser element 20 has a light emitting surface 22 on side surface 21C, and emits light laterally from light emitting surface 22. One or each semiconductor laser element 20 emits light in a first direction. In the illustrated light emitting device 1, the positive Y direction can be considered to be the first direction.

[0119] In the light emitting device, one or each reflecting member 40 is disposed on the base 11. The one or each reflecting member 40 is disposed in the internal space of the package 10. The one or each reflecting member 40 is disposed on the first upper surface 11A. The one or each reflecting member 40 is disposed at a position spaced apart from the semiconductor laser element 20 in the first direction.

[0120] One or each of the reflecting members 40 reflects light emitted from the semiconductor laser element 20. One or each of the semiconductor laser elements 20 emits light toward the light-reflecting surface 41B of the reflecting member 40. The light reflected by the light-reflecting surface 41B is incident on the lens surface 14M. Note that the light emitted from the semiconductor laser element 20 may be incident on the lens surface 14M without using reflection by the reflecting member 40.

[0121] The or each reflecting member 40 is spaced apart from the inner surface 11E of the package 10. The or each reflecting member 40 is arranged such that the light reflecting surface 41B faces the light emitting surface 22 of the semiconductor laser element 20 and the side surface opposite to the light reflecting surface 41B faces the first inner surface 11E1.

[0122] By not using the inner surface 11E of the package 10 as a light reflecting surface and providing the light reflecting surface 41B at a position away from the inner surface 11E, it is possible to ensure a large width of the lens surface 14M in the first direction.

[0123] The light beams passing through the optical axis emitted from one or each semiconductor laser element 20 are reflected by the reflecting member 40 in a direction perpendicular to the first upper surface 11A. In a top view, the position where the light beams passing through the optical axis are irradiated onto the light reflecting surface 41B overlaps with the optical axis LA of the lens surface 14M.

[0124] The position where the main portion of light emitted from one or each semiconductor laser element 20, which is incident on the lens surface 14M at the position furthest from the optical axis LA in the first direction, passes through the lens surface 14M of the lid 14 is inside one or more inner surfaces 11E of the base 11 in a top view (see FIG. 6B ). The position where this light passes through the top surface 14A of the lid 14 is outside the multiple inner surfaces 11E of the base 11 in a top view. In this way, the lens surface 14M can be effectively used to emit diffused light from the top surface of the light-emitting device 1. This light is also reflected by the light-reflecting surface 41B of the reflecting member 40. This light also passes through the first inner surface 11E1 of the base 11 and passes through an imaginary plane parallel to the first inner surface 11E1. The first direction here is the positive Y direction in the illustrated light-emitting device 1.

[0125] The position where the light reflected by the light-reflecting surface 41B at the upper end of the light-reflecting surface 41B, which is a major portion of the light emitted from one or each semiconductor laser element 20, passes through the lens surface 14M of the lid 14 is inside one or more of the inner surfaces 11E of the base 11 in a top view (see FIG. 6C ). The position where this light passes through the upper surface 14A of the lid 14 is outside the inner surfaces 11E of the base 11 in a top view. In this way, the lens surface 14M can be effectively used to emit diffused light from the top surface of the light-emitting device 1. This light is also reflected by the light-reflecting surface 41B of the reflecting member 40. This light also passes through the first inner surface 11E1 of the base 11 and passes through an imaginary plane parallel to the first inner surface 11E1. The first direction here is the positive Y direction in the illustrated light-emitting device 1.

[0126] In the light emitting device 1, one or each protective element 50 is disposed on the base 11. The one or each protective element 50 is disposed in the internal space of the package 10. The one or more protective elements 50 include a protective element 50 disposed on the upper surface 11G of the stepped portion 11F of the base 11. The protective element 50 protects the semiconductor laser element 20 disposed on the base 11.

[0127] The light emitting device 1 has a plurality of wirings 60 electrically connected to the semiconductor laser element 20. The plurality of wirings 60 includes one or more wirings 60 joined to the semiconductor laser element 20. The plurality of wirings 60 includes one or more wirings 60 joined to the first step portion 11F1 of the base 11. The plurality of wirings 60 includes one or more wirings 60 joined to the second step portion 11F2 of the base 11.

[0128] The plurality of wirings 60 are joined to the first wiring portion 12A1 and electrically connect the semiconductor laser element 20 to the second wiring portion 12A2.

[0129] Second Embodiment A light emitting device 2 according to a second embodiment will be described. FIGS. 2, 5, and 7 to 14 are diagrams illustrating an exemplary embodiment of the light emitting device 2. FIG. 2 is a side view of the light emitting device 2. FIG. 5 is a top view of the light emitting device 2 with the lid 14 seen through. The lid 14 is indicated by a dotted line. The hatched portion indicates a region R1, which will be described later. FIG. 7 is a perspective view of the lid 14, seen from the side where the lens surface 14M is provided. FIG. 8 is a top view of the lid 14, seen from the side where the lens surface is provided. In FIGS. 7 and 8, the optical axis LA of the lens surface 14M is indicated by a dotted line. FIG. 9 is a perspective view showing the internal structure of the package of the light emitting device 2. FIG. 10 is a top view showing the internal structure of the package of the light emitting device 2. FIG. 11 is a bottom view of the package 10. FIG. 12 is a top view showing the arrangement of the semiconductor laser element 20 and the submount 30. Fig. 13 is a side view showing the arrangement of the semiconductor laser element 20 and the submount 30. Fig. 14 is a cross-sectional view of the light-emitting device 2. Note that the wiring 60 is not shown in the cross-sectional view of Fig. 14. The cross-sectional position of the light-emitting device 2 in Fig. 14 corresponds to the cross-sectional view of the light-emitting device 1 in Fig. 3.

[0130] Of the above-described descriptions of the light-emitting device 1 and each component of the first embodiment, all of the descriptions except for those that may be considered inconsistent with the drawings of the light-emitting device 2 in Figures 2, 5, and 7 to 14 also apply to the description of the light-emitting device 2. To avoid redundancy, all of the descriptions that are not inconsistent will not be repeated here.

[0131] The light emitting device 1 includes a plurality of components, including a package 10A, one or more semiconductor laser elements 20, one or more submounts 30, one or more reflecting members 40, one or more protection elements 50, and a plurality of wirings 60.

[0132] (Package 10A) In package 10A, lens surface 14M of lid 14 is formed on the upper surface 14A side. Lens surface 14M is formed to be recessed toward the lower surface 14B side. Lens surface 14M is formed below an imaginary plane that includes and is parallel to upper surface 14A. Lens surface 14M is a concave lens surface that is recessed downward from upper surface 14A.

[0133] The point on lens surface 14M that passes through the optical axis LA of the lens is located at the lowest position. Lens surface 14M is formed in cover 14 in a shape that is recessed downward.

[0134] In the vertical direction, the distance from the upper surface 14A of the lid 14 to the optical axis of the lens surface 14M is 20% to 60% of the width (thickness) from the upper surface 14A to the lower surface 14B of the lid 14.

[0135] The or each first inner surface 14D1 connects with the top surface 14A.

[0136] In the vertical direction, the width of the first inner surface 14D1 is more than 0% and not more than 30% of the distance from the top surface 14A of the lid 14 to the optical axis LA of the lens surface 14M.

[0137] The or each first inner surface 14D1 extends downward perpendicular to the top surface 14A, where perpendicular here includes a difference of ±5 degrees.

[0138] The or each second inner surface 14D2 connects with the top surface 14A.

[0139] One or each of the second inner surfaces 14D2 extends obliquely downward relative to the top surface 14A. The angle formed between the top surface 14A and the second inner surfaces 14D2 is an obtuse angle. Therefore, in a top view, the side connecting the second inner surfaces 14D2 and the lens surfaces 14M does not overlap with the top surface 14A.

[0140] (Light-emitting device 2) In light-emitting device 2, the orientation of lid body 14 in package 10A is different from the orientation of lid body 14 in package 10 of light-emitting device 1. In light-emitting device 1, lens surface 14M is provided on bottom surface 14B, but in light-emitting device 2, lens surface 14M is provided on top surface 14A.

[0141] In the light-emitting device 1, the light emitted from the semiconductor laser element 20 is incident on the lens surface 14M of the lid body 14 and is emitted from the upper surface 14A, but in the light-emitting device 2, the light emitted from the semiconductor laser element 20 is incident on the lower surface 14B of the lid body 14 and is emitted from the lens surface 14M. Therefore, the light emitted from the semiconductor laser element 20 is emitted from the lens surface 14M instead of being incident on the lens surface 14M.

[0142] By providing the lens surface 14M on the upper surface 14A, the area where the lower surface 14B of the lid 14 and the second upper surface 11C of the base overlap in a top view is larger than that of the light-emitting device 1. Furthermore, when bonding the base 11 and the lid 14, there is no need to consider the possibility of the adhesive contacting the lens surface 14M. On the other hand, if the lens surface 14M is provided on the upper surface 14A, the size of the lens surface 14M that must be secured to allow light to pass through is larger than that of the light-emitting device 1. Furthermore, due to differences in the optical path length before entering the lens surface 14M, even if the divergence angle of light passing through the lens surface 14M is the same, differences in the diffusion pattern occur. Taking these points into consideration, it can be determined whether the configuration of the light-emitting device 1 or the configuration of the light-emitting device 2 is preferable.

[0143] Third Embodiment A light emitting device 3 according to a third embodiment will now be described. FIGS. 1 to 13, 15, and 16 are diagrams for explaining an exemplary embodiment of the light emitting device 3. FIGS. 1 to 13 are diagrams illustrating the light emitting device 3 without the wave plate 70, and the light emitting device 3 without the wave plate 70 is equivalent to the light emitting device 1. Therefore, the explanation of each figure can be made by referring to the explanation of the light emitting device 1. FIG. 15 is a perspective view of the light emitting device 3. FIG. 16 is a cross-sectional view of the light emitting device 3. Note that the wiring 60 is not shown in the cross-sectional view of FIG. 16. The cross-sectional position of the light emitting device 3 in the cross-sectional view of FIG. 16 corresponds to the cross-sectional view of the light emitting device 1 in FIG. 3.

[0144] Of the above-described descriptions of the light-emitting device 1 and each component of the first embodiment, all of the descriptions except for those that may be considered inconsistent with the drawings of the light-emitting device 3 in Figures 1 to 13, 15, and 16 also apply to the description of the light-emitting device 3. To avoid redundancy, all of the descriptions that are not inconsistent will not be repeated here.

[0145] The light emitting device 3 includes a plurality of components, including a package 10, one or more semiconductor laser elements 20, one or more submounts 30, one or more reflecting members 40, one or more protective elements 50, a plurality of wirings 60, and a wave plate 70.

[0146] (Wave Plate 70) The wave plate 70 changes the polarization state of outgoing light relative to incident light. Examples of the wave plate 70 include a half-wave plate that rotates the polarization direction of linearly polarized light and a quarter-wave plate that converts linearly polarized light into circularly polarized light. For example, a half-wave plate can be used as the wave plate 70.

[0147] The wave plate 70 has an upper surface 71A, a lower surface 71B, and one or more side surfaces 71C. The wave plate 70 is formed in the shape of a flat plate. The outer edge shape of the wave plate 70 when viewed from above is a rectangle having long and short sides. Note that the shape does not have to be rectangular, but may be, for example, an ellipse, with one side longer than the other.

[0148] (Light-emitting device 3) In the light-emitting device 3, a wave plate 70 is disposed on the top surface 14A of the package 10. The wave plate 70 is bonded to the top surface 14A. The wave plate 70 is bonded to the lid 14 via an adhesive. The wave plate 70 is disposed on the side opposite to the side on which the lens surface 14M is provided. This eliminates the risk of the adhesive used to bond the wave plate 70 adhering to the lens surface 14M.

[0149] The light emitted from the upper surface 14A passes through the wave plate 70. By passing through the wave plate 70, the polarization direction of the light that has passed through the wave plate 70 differs from the polarization direction of the light before it entered the wave plate 70.

[0150] Fourth Embodiment A light-emitting device 4 according to a fourth embodiment will now be described. FIGS. 2, 5, 7 to 14, 17, and 18 are diagrams illustrating an exemplary embodiment of the light-emitting device 4. FIGS. 2, 5, 7 to 14 are diagrams illustrating the light-emitting device 4 without the wave plate 70. The light-emitting device 4 without the wave plate 70 is equivalent to the light-emitting device 2. Therefore, the explanation of each figure can be made by referring to the explanation of the light-emitting device 2. FIG. 17 is a top view of the light-emitting device 4. FIG. 18 is a cross-sectional view of the light-emitting device 4. Note that the wiring 60 is not shown in the cross-sectional view of FIG. 18. The cross-sectional position of the light-emitting device 4 in FIG. 18 corresponds to the cross-sectional view of the light-emitting device 1 in FIG. 3.

[0151] The above-mentioned descriptions of the light emitting device 1 and each component of the first embodiment, the light emitting device 2 and components of the second embodiment, and the light emitting device 1 and components of the third embodiment, except for the content that can be said to be inconsistent with the drawings of the light emitting device 4 in Figures 2, 5, 7 to 14, 17, and 18, also apply to the description of the light emitting device 4. To avoid redundancy, all content that does not contradict will not be repeated here.

[0152] (Light Emitting Device 4) In the light emitting device 4, a lens surface 14M is provided on the upper surface 14A side of the package 10, and the wave plate 70 is bonded to the upper surface 14A via an adhesive.

[0153] Fifth Embodiment A light emitting module 901 according to a fifth embodiment will be described. Fig. 19 is a diagram for explaining an exemplary embodiment of the light emitting module 901. Fig. 19 is a schematic diagram of the light emitting module 901.

[0154] The light-emitting module 901 includes a plurality of light-emitting devices 1 or 2, a plurality of light-emitting devices 3 or 4, and a light guide plate 101. The plurality of light-emitting devices 1 or 2 includes a case where the plurality of light-emitting devices 1 or 2 is composed of a plurality of light-emitting devices 1, a case where the plurality of light-emitting devices 2 is composed of a plurality of light-emitting devices, or a case where the plurality of light-emitting devices 3 or 4 is composed of a plurality of light-emitting devices 3 or 4, or a case where the plurality of light-emitting devices 3 or 4 is composed of a plurality of light-emitting devices 4. For convenience, the plurality of light-emitting devices 1 or 2 will be referred to as a plurality of first light-emitting devices, and the plurality of light-emitting devices 3 or 4 will be referred to as a plurality of second light-emitting devices.

[0155] The light emitting device 1, the light emitting device 2, the light emitting device 3, and the light emitting device 4 are as described in the first to fourth embodiments. 1 to 18 are also diagrams for explaining the light emitting module 901.

[0156] (Light-emitting module 901) The color of light emitted from the first light-emitting device is different from the color of light emitted from the second light-emitting device. The peak emission wavelength of the light emitted from the first light-emitting device is different from the peak emission wavelength of the light emitted from the second light-emitting device. The difference between the peak emission wavelength of the light emitted from the first light-emitting device and the peak emission wavelength of the light emitted from the second light-emitting device is at least 20 nm or more.

[0157] The first light emitting device does not include a wave plate, and the second light emitting device includes a wave plate 70. The polarization direction of light emitted from the semiconductor laser element 20 (hereinafter referred to as the first semiconductor laser element) included in the first light emitting device is different from the polarization direction of light emitted from the semiconductor laser element 20 (hereinafter referred to as the second semiconductor laser element) included in the second light emitting device.

[0158] The plurality of first light-emitting devices and the plurality of second light-emitting devices include one or more first light-emitting devices and one or more second light-emitting devices that emit light in the same direction. Here, emitting light in the same direction means that the fast axis directions of the light are the same and the slow axis directions of the light are the same. Each of the one or more first light-emitting devices and the one or more second light-emitting devices emits light from the upper surface 14A whose fast axis direction is parallel to the first direction and whose slow axis direction is parallel to the second direction.

[0159] The polarization direction of the light emitted from each of the one or more first light-emitting devices and the one or more second light-emitting devices is the same. The wave plate 70 included in the second light-emitting device changes the polarization direction of the light emitted from the second semiconductor laser element, causing light to be emitted with the same polarization direction as the light emitted from the first light-emitting device. This makes it possible to align the polarization directions of the light emitted from the one or more first light-emitting devices and the one or more second light-emitting devices.

[0160] The plurality of first light emitting devices includes two first light emitting devices that emit light of different colors, and two first light emitting devices that emit light of different emission peak wavelengths, the difference between the emission peak wavelengths of these two first light emitting devices being at least 20 nm or more.

[0161] The plurality of first light-emitting devices and the plurality of second light-emitting devices include a light-emitting device having a semiconductor laser element 20 that emits red light, a light-emitting device having a semiconductor laser element 20 that emits green light, and a light-emitting device having a semiconductor laser element 20 that emits blue light. For example, the plurality of first light-emitting devices include a light-emitting device having a semiconductor laser element 20 that emits green light and a light-emitting device having a semiconductor laser element 20 that emits blue light, and the plurality of second light-emitting devices include a light-emitting device having a semiconductor laser element 20 that emits red light.

[0162] The light emitting module 901 may be configured with a second light emitting device including a semiconductor laser element 20 that emits red light, a first light emitting device including a semiconductor laser element 20 that emits green light, and a second light emitting device including a semiconductor laser element 20 that emits blue light. In other words, the light emitting module 901 may include one or more second light emitting devices instead of a plurality of second light emitting devices.

[0163] Alternatively, the light emitting module 901 may be configured with a first light emitting device including a semiconductor laser element 20 that emits red light, a second light emitting device including a semiconductor laser element 20 that emits green light, and a third light emitting device including a semiconductor laser element 20 that emits blue light. In other words, the light emitting module 901 may include one or more first light emitting devices instead of a plurality of first light emitting devices.

[0164] In other words, the light emitting module 901 may include one or more first light emitting devices and one or more second light emitting devices, and the one or more first light emitting devices and one or more second light emitting devices may include a light emitting device having a semiconductor laser element 20 that emits red light, a light emitting device having a semiconductor laser element 20 that emits green light, and a light emitting device having a semiconductor laser element 20 that emits blue light.

[0165] One or more first light-emitting devices and one or more second light-emitting devices that emit light in the same direction are arranged side by side in a first direction. Because the one or more first light-emitting devices and one or more second light-emitting devices emit light that is diffused in the first direction by lens surface 14M, the distance between the light-emitting devices can be determined based on the diffused light.

[0166] Light emitted from the plurality of first light-emitting devices and the plurality of second light-emitting devices enters light guide plate 101. Light emitted from the first light-emitting devices and light emitted from the second light-emitting devices enter light guide plate 101 with their polarization directions aligned. By emitting light diffused in the first direction by lens surface 14M, the distance between the first light-emitting devices and the second light-emitting devices arranged side by side in the first direction can be increased, and the number of light-emitting devices included in light-emitting module 901 can be reduced.

[0167] Sixth Embodiment A light-emitting device 6 according to a sixth embodiment will be described. FIGS. 1, 2, 9 to 13, and 20 to 21C are drawings for explaining an exemplary embodiment of the light-emitting device 6. FIG. 1 is a perspective view of the light-emitting device 6. FIG. 2 is a side view of the light-emitting device 6. FIG. 9 is a perspective view showing the internal structure of the package of the light-emitting device 6. FIG. 10 is a top view showing the internal structure of the package of the light-emitting device 6. FIG. 11 is a bottom view of the package 10. FIG. 12 is a top view showing the arrangement of the semiconductor laser element 20 and the submount 30. FIG. 13 is a side view showing the arrangement of the semiconductor laser element 20 and the submount 30. FIG. 20 is a cross-sectional view of the light-emitting device 6. Note that the wiring 60 is not shown in the cross-sectional view of FIG. 20. The cross-sectional position of the cross-sectional view of the light-emitting device 6 in FIG. 20 corresponds to the cross-sectional view of the light-emitting device 1 in FIG. 3. FIG. 21A is a diagram showing the light intensity distribution of the first light in an imaginary plane a predetermined distance away from the light-emitting device 6 in the fast axis direction. 21B is a diagram showing the light intensity distribution of the second light in a virtual plane a predetermined distance away from the light-emitting device 6 in the fast-axis direction. Fig. 21C is a diagram showing the light intensity distribution of the combined light of the first light and the second light in a virtual plane a predetermined distance away from the light-emitting device 6 in the fast-axis direction.

[0168] Of the above-described descriptions of the light-emitting device 1 and each of its components according to the first embodiment, all of the descriptions except for those that may be considered inconsistent with the drawings of the light-emitting device 6 in Figures 1, 2, 9 to 13, and 20 to 21C also apply to the description of the light-emitting device 6. To avoid redundancy, all of the descriptions that are not inconsistent will not be repeated here.

[0169] The light emitting device 6 includes a plurality of components, including a package 10B, one or more semiconductor laser elements 20, one or more submounts 30, one or more reflecting members 40, one or more protective elements 50, and a plurality of wirings 60.

[0170] (Package 10B) Package 10B has two or more lens surfaces 14M. The two or more lens surfaces 14M include a first lens surface 14M1 and a second lens surface 14M2. The two or more lens surfaces 14M are formed in a continuous manner. Each of the two or more lens surfaces 14M has the same shape.

[0171] (Light-emitting device 6) In light-emitting device 6, light emitted from one semiconductor laser element 20 is incident on two or more lens surfaces 14M. Light emitted from one semiconductor laser element 20 is incident on first lens surface 14M1 and second lens surface 14M2.

[0172] Here, light emitted from one semiconductor laser element 20 and incident on first lens surface 14M1 will be referred to as "first light." Also, light emitted from one semiconductor laser element 20 and incident on second lens surface 14M2 will be referred to as "second light." The light emitted from one semiconductor laser element 20 can be said to be a combination of the first light and the second light.

[0173] The cover 14 emits light from the upper surface 14A, the light intensity distribution of which in the fast axis direction of the light emitted from the semiconductor laser element 20 is more uniform than that of the light emitted from the semiconductor laser element 20.

[0174] Light is emitted from the light-emitting device 6 so that the light intensity distribution in an imaginary plane a predetermined distance away from the light-emitting device 6 in the fast axis direction is more uniform than the light intensity distribution in the FFP of the light emitted from the semiconductor laser element 20. In the fast axis direction, the light of the peak light intensity in the first light and the light of the peak light intensity in the second light are located at both ends of the irradiation region in this imaginary plane.

[0175] The first light has a light intensity distribution on first lens surface 14M1 such that the light intensity decreases in the direction from second lens surface 14M2 to first lens surface 14M1, while the first light has a light intensity distribution on a virtual plane a predetermined distance away such that the light intensity increases in the direction from second lens surface 14M2 to first lens surface 14M1 (see FIG. 21A ).

[0176] The second light has a light intensity distribution on second lens surface 14M2 such that the light intensity decreases in the direction from first lens surface 14M1 to second lens surface 14M2, while on a virtual plane a predetermined distance away, the second light has a light intensity distribution such that the light intensity increases in the direction from first lens surface 14M1 to second lens surface 14M2 (see FIG. 21B ).

[0177] Then, the first light and the second light overlap on an imaginary plane separated by a predetermined distance, realizing a more uniform light intensity distribution (see FIG. 21C).

[0178] The light-emitting device 6 can provide light with a larger spread of light in the fast axis direction and a more uniform light intensity distribution in the fast axis direction. <Seventh Embodiment> A light-emitting device 7 according to a seventh embodiment will be described. FIGS. 1, 2, 7, 8, 11 to 13, and 22 are drawings for explaining an exemplary embodiment of the light-emitting device 7. FIG. 1 is a perspective view of the light-emitting device 7. FIG. 2 is a side view of the light-emitting device 7. FIG. 7 is a perspective view of the lid 14, seen from the side where the lens surface 14M is provided. FIG. 8 is a top view of the lid 14, seen from the side where the lens surface is provided. Note that in FIGS. 7 and 8, the optical axis LA of the lens surface 14M is indicated by a dotted line. FIG. 11 is a bottom view of the package 10. FIG. 12 is a top view showing the arrangement of the semiconductor laser element 20 and the submount 30. FIG. 13 is a side view showing the arrangement of the semiconductor laser element 20 and the submount 30. FIG. 22 is a cross-sectional view of the light-emitting device 7. 22 does not show the wiring 60. The cross-sectional view of the light-emitting device 7 in FIG. 22 corresponds to the cross-sectional view of the light-emitting device 1 in FIG.

[0179] Of the above-described descriptions of the light-emitting device 1 and each component of the first embodiment, all of the descriptions except for those that may be considered inconsistent with the drawings of the light-emitting device 7 in Figures 1, 2, 7, 8, 11 to 13, and 22 also apply to the description of the light-emitting device 7. To avoid redundancy, all of the descriptions that are not inconsistent will not be repeated here.

[0180] The light emitting device 7 includes a plurality of components, including a package 10, one or more semiconductor laser elements 20, one or more submounts 30, one or more reflecting members 40A, one or more protection elements 50, and a plurality of wirings 60.

[0181] (Reflecting Member 40A) The reflecting member 40A has two or more light reflecting surfaces 41B. The two or more light reflecting surfaces 41B include a first light reflecting surface 41B1 and a second light reflecting surface 41B2. The two or more light reflecting surfaces 41B are provided in a continuous manner.

[0182] (Light-emitting device 7) In the light-emitting device 7, light emitted from one semiconductor laser element 20 is incident on two or more light-reflecting surfaces 41B. The light emitted from one semiconductor laser element 20 is incident on a first light-reflecting surface 41B1 and a second light-reflecting surface 41B2.

[0183] Here, light emitted from one semiconductor laser element 20 and incident on the first light reflecting surface 41B1 will be referred to as first reflected light. Also, light emitted from one semiconductor laser element 20 and incident on the second light reflecting surface 41B2 will be referred to as second reflected light. The light emitted from one semiconductor laser element 20 can be said to be a combination of the first reflected light and the second reflected light.

[0184] The reflecting member 40A makes the light intensity distribution in the fast axis direction of the light emitted from the semiconductor laser element 20 more uniform than the light emitted from the semiconductor laser element 20, and causes the light to be incident on the lens surface 14M.

[0185] Light is emitted from the light-emitting device 7 so that the light intensity distribution in an imaginary plane a predetermined distance away from the light-emitting device 7 in the fast axis direction is more uniform than the light intensity distribution in the FFP of the light emitted from the semiconductor laser element 20. The reflecting member 40A optically controls the light emitted from the semiconductor laser element 20 so that the light intensity distribution is more uniform, and the lens surface 14M optically controls the light emitted from the semiconductor laser element 20 so that the spread of the light is increased.

[0186] Optical control that makes the light intensity distribution at a predetermined distance more uniform using two or more light reflecting surfaces 41B can be achieved by citing the optical control described in Japanese Patent Application Nos. 2017-157063 and 2018-13695. However, while these applications aim to make the light intensity distribution uniform on the bottom or top surface of the fluorescent unit, the light emitting device 6 differs in that the light intensity distribution is made more uniform on a virtual plane that is a predetermined distance away from the light emitting device 6. In other words, the only difference is the position (optical path length) where the light intensity distribution is made more uniform, and the principle of optical control is the same.

[0187] In light-emitting device 6, two or more lens surfaces 14M of lid 14 achieve both the effect of increasing the spread of light in the fast axis direction and the effect of making the light intensity distribution in the fast axis direction more uniform, but in light-emitting device 7, these effects are shared between reflecting member 40A and lid 14, increasing the spread of light in the fast axis direction and emitting light with a more uniform light intensity distribution in the fast axis direction from light-emitting device 7. This allows the positions of two components to be adjusted for mounting, so that the mounting position of one component can be adjusted taking into account any misalignment in the mounting of the other component.

[0188] Although the above describes various embodiments of the present invention, the light-emitting device and light-emitting module according to the present invention are not strictly limited to the light-emitting device and light-emitting module of each embodiment. In other words, the present invention can be realized without being limited to the external shape and structure of the light-emitting device and light-emitting module disclosed in each embodiment. The present invention can be applied without necessarily including all components. For example, if the claims do not recite some of the components of a light-emitting device disclosed in an embodiment, the claims allow for the design freedom of those components by those skilled in the art, such as substitution, omission, modification of shape, and material changes, and specify that the invention described in the claims applies.

[0189] The following technical matters are disclosed through the content described so far in this specification. (Item 1) A light-emitting device comprising: a substrate having a base portion having a first upper surface and a frame portion having a second upper surface; a semiconductor laser element disposed on the first upper surface and emitting light in an elliptical far-field pattern; and a lid body having an upper surface, a lower surface bonded to the second upper surface, and a cylindrical lens surface formed on the lower surface side so as to be recessed toward the upper surface, wherein the semiconductor laser element is disposed in a sealed space surrounded by the substrate and the lid body, and the lid body further diffuses light emitted from the semiconductor laser element and incident on the cylindrical lens surface in the fast axis direction, and emits the light from the top surface. (Item 2) The light-emitting device according to item 1, wherein the lid body emits light from the top surface having a more uniform light intensity distribution in the fast axis direction of the light emitted from the semiconductor laser element than the light emitted from the semiconductor laser element. (Item 3) The light emitting device according to item 1 or 2, further comprising a reflecting member disposed at a position spaced apart from the semiconductor laser element in a first direction and reflecting light emitted from the semiconductor laser element, wherein the lid has one or more inner surfaces connected to the bottom surface and the cylindrical lens surface, and the one or more inner surfaces include an inner surface overlapping with the second top surface in a top view. (Item 4) The light emitting device according to item 3, wherein the reflecting member makes the light intensity distribution in the fast axis direction of the light emitted from the semiconductor laser element more uniform than that of the light emitted from the semiconductor laser element and causes the light to be incident on the cylindrical lens surface. (Item 5) The light emitting device according to item 3 or 4, wherein the light passing through the optical axis emitted from the semiconductor laser element is reflected by the reflecting member in a direction perpendicular to the first top surface. (Item 6) The light emitting device according to any one of items 3 to 5, wherein the outer edge shape of the base is rectangular in top view, with a width in the first direction greater than a width in a second direction perpendicular to the first direction. (Item 7) The light emitting device according to any one of Items 1 to 6, wherein the divergence angle in the fast axis direction of the light emitted from the lid body is 1.1 to 2.5 times the divergence angle in the fast axis direction of the light emitted from the semiconductor laser element.(Item 8) The light emitting device according to any one of items 1 to 7, wherein the frame of the base further has a plurality of inner side surfaces intersecting with the second upper surface, and a position where a main portion of light emitted from the semiconductor laser element, which is incident on the cylindrical lens surface at a position furthest from the optical axis in the first direction, passes through the cylindrical lens surface of the lid is inside the plurality of inner side surfaces of the frame in a top view, and a position where the light passes through the upper surface of the lid is outside the plurality of inner side surfaces of the frame in a top view. (Item 9) The light emitting device according to any one of items 1 to 8, further comprising a wave plate bonded to the upper surface of the lid. (Item 10) The light emitting device according to any one of items 1 to 9, wherein the cylindrical lens surface is a lens surface where a point passing through the optical axis of the lens is located highest. (Item 11) The light emitting device according to any one of items 1 to 10, wherein light is emitted such that a light intensity distribution in a virtual plane a predetermined distance away from the light emitting device in the fast axis direction is more uniform than the light intensity distribution in the FFP of light emitted from the semiconductor laser element. (Item 12) A light emitting module comprising: the light emitting device according to item 1, a first light emitting device not including a wave plate; a second light emitting device which is the light emitting device according to item 9; and a light guide plate into which the light emitted from the first light emitting device and the light emitted from the second light emitting device are incident with their polarization directions aligned.

[0190] The light-emitting device and light-emitting module described in the embodiments can be used as backlights for head-mounted displays and other displays. In other words, the display field can be considered one application form to which the present invention can be applied. However, the present invention is not limited to this and can be used in various applications such as projectors, lighting, exposure devices, and vehicle headlights.

[0191] 1, 2, 3, 4, 6, 7 Light-emitting device 10, 10A, 10B Package 11 Substrate 11A First upper surface 11B Lower surface 11C Second upper surface 11D Outer surface 11E Inner surface 11E1 First inner surface 11F Step portion 11F1 First step portion 11F2 Second step portion 11G Upper surface 11H Side surface 11M Base portion 11N Frame portion 12A Wiring portion 12A1 First wiring portion 12A2 Second wiring portion 13A Bonding pattern 14 Cover body 14A Upper surface 14B Lower surface 14C Side surface 14D1 First inner surface 14D2 Second inner surface 14M Lens surface 14M1 First lens surface 14M2 Second lens surface 20 Semiconductor laser element 21A Upper surface 21B Lower surface 21C Side surface 22 Light-emitting surface 30 Submount 31A Upper surface 31B Lower surface 31C Side surface 32A Substrate 32B Upper metal member 32C Lower metal member 33 Wiring layer 40, 40A Reflective member 41A Lower surface 41B Light-reflecting surface 41B1 First light-reflecting surface 41B2 Second light-reflecting surface 50 Protection element 51A Upper surface 51B Lower surface 51C Side surface 60 Wiring 70 Wavelength plate 71A Upper surface 71B Lower surface 71C Side surface 101 Light guide plate 901 Light-emitting module

Claims

1. a base body having a base portion having a first upper surface and a frame portion having a second upper surface; a semiconductor laser element disposed on the first upper surface and emitting light in an elliptical far-field pattern; a lid having an upper surface, a lower surface that is joined to the second upper surface, and a cylindrical lens surface that is recessed toward the upper surface on the lower surface side; Equipped with the semiconductor laser element is disposed in a sealed space surrounded by the base body and the lid body, The lid further diffuses the light emitted from the semiconductor laser element and incident on the cylindrical lens surface in the fast axis direction, causing the light to exit from the top surface.

2. 2. The light emitting device according to claim 1, wherein the lid body emits light from the top surface, the light intensity distribution of the light emitted from the semiconductor laser element in a fast axis direction being more uniform than that of the light emitted from the semiconductor laser element.

3. a reflecting member arranged at a position spaced apart from the semiconductor laser element in a first direction and configured to reflect light emitted from the semiconductor laser element; the lid body has one or more inner surfaces connected to the lower surface and the cylindrical lens surface, The light emitting device according to claim 1 , wherein the one or more inner surfaces include an inner surface that overlaps the second upper surface in a top view.

4. 4. The light emitting device according to claim 3, wherein the reflecting member makes the light intensity distribution in the fast axis direction of the light emitted from the semiconductor laser element more uniform than the light emitted from the semiconductor laser element and makes the light incident on the cylindrical lens surface.

5. The light emitting device according to claim 3 , wherein light that is emitted from said semiconductor laser element and travels along an optical axis is reflected by said reflecting member in a direction perpendicular to said first upper surface.

6. The light emitting device according to claim 3 , wherein the outer edge of the base has a rectangular shape in a top view, the width in the first direction being greater than the width in a second direction perpendicular to the first direction.

7. 2. The light emitting device according to claim 1, wherein a divergence angle in the fast axis direction of the light emitted from said lid is 1.1 to 2.5 times a divergence angle in the fast axis direction of the light emitted from said semiconductor laser element.

8. the frame portion of the base further has a plurality of inner surfaces that intersect with the second upper surface, 2. The light emitting device of claim 1, wherein the position at which a main portion of light emitted from the semiconductor laser element, which is incident on the cylindrical lens surface at a position furthest from the optical axis in a first direction, passes through the cylindrical lens surface of the lid body is inside the multiple inner surfaces of the frame portion when viewed from above, and the position at which the light passes through the upper surface of the lid body is outside the multiple inner surfaces of the frame portion when viewed from above.

9. The light emitting device according to claim 1 , further comprising a wave plate bonded to the top surface of the lid.

10. The light emitting device according to claim 1 , wherein the cylindrical lens surface is a lens surface on which a point passing through an optical axis of the lens is located at the uppermost position.

11. 2. The light emitting device according to claim 1, wherein light is emitted such that the light intensity distribution in a virtual plane a predetermined distance away from the light emitting device in the fast axis direction is more uniform than the light intensity distribution in an FFP of the light emitted from the semiconductor laser element.

12. 2. The light emitting device according to claim 1, comprising: a first light emitting device not including a wave plate; a second light-emitting device that is the light-emitting device according to claim 9; a light guide plate onto which light emitted from the first light emitting device and light emitted from the second light emitting device are incident with their polarization directions aligned; A light emitting module comprising: