Mask and exposure method

Abstract

The purpose of the invention is to provide a phase shift mask that can be formed in a shorter takt time than when a mask provided with a phase-shift film having a transmittance of about 5% is used.　A mask (300) comprises: a phase shift film (20) that has an exposure light (wavelength λ) transmittance of 35% and a square contact hole pattern (20a), and that is formed on a mask substrate; and a light-shielding film (30) that is formed on the phase shift film (20) and that has a polygonal aperture pattern (30a) for exposing the phase shift film (20). When the target diameter of a pattern formed using a projection optical system having a numerical aperture NA is 0.45 to 0.52 λ / NA, the length of one side of the contact hole pattern (20a) is 0.71 to 0.82 λ / NA, and the distance between one side of the contact hole pattern (20a) and one side of the polygonal aperture pattern (30a) is 0.48 to 0.64 λ / NA.

Description

Mask and exposure method

[0001] It relates to a mask and an exposure method.

[0002] Conventionally, in the lithography process for manufacturing electronic devices (microdevices) such as liquid crystal display elements and semiconductor elements (integrated circuits, etc.), a step-and-scan exposure apparatus (a so-called scanning stepper (also called a scanner)) has been used, in which a mask or reticle (hereinafter collectively referred to as a "mask") and a glass substrate or wafer (hereinafter collectively referred to as a "substrate") are moved synchronously along a predetermined scanning direction (scanning direction), and a pattern formed on the mask is transferred onto the substrate using an energy beam.

[0003] In recent years, with the demand for miniaturization of devices, exposure apparatuses are required to transfer patterns with high resolution. Techniques for transferring patterns with high resolution include resolution enhancement techniques (RET). One RET technique is known to use a phase shift mask (see, for example, Patent Document 1).

[0004] Japanese Patent Application Laid-Open No. 2005-25230

[0005] According to a first aspect of the disclosure, a mask comprises: a mask substrate that transmits exposure light having a wavelength λ; a phase shift film having a transmittance of 35% for the exposure light and having a first pattern including a substantially square contact hole pattern, the phase shift film being formed on the mask substrate; and a light-shielding film formed on the phase shift film and having a second pattern including an opening pattern that exposes the phase shift film at the periphery of the contact hole pattern, wherein when an image of the first pattern is projected onto an exposed member by the exposure light via a projection optical system having a numerical aperture NA, a target diameter of a formation pattern formed corresponding to the contact hole pattern is 0.45λ / NA to 0.52λ / NA, the length of one side of the contact hole pattern is 0.71λ / NA to 0.82λ / NA, the shape of the opening pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to the first side is 0.48λ / NA to 0.64λ / NA.

[0006] According to a second aspect of the disclosure, a mask comprises: a mask substrate that transmits exposure light of wavelength λ; a phase shift film that has a transmittance of 35% for the exposure light and has a first pattern including a substantially square contact hole pattern and is formed on the mask substrate; and a light-shielding film that is formed on the phase shift film and has a second pattern including an opening pattern that exposes the phase shift film at the periphery of the contact hole pattern, wherein the length of one side of the contact hole pattern is 0.71λ / NA to 0.82λ / NA, the shape of the opening pattern of the light-shielding film is a polygon having sides that are substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon that is parallel to the one side is 0.48λ / NA to 0.64λ / NA, and NA represents the numerical aperture of a projection optical system that projects an image of the first pattern onto an exposed member using the exposure light.

[0007] According to a third aspect of the disclosure, a mask comprises: a mask substrate that transmits exposure light; a phase shift film that has a first pattern including a substantially square contact hole pattern and that has a transmittance of 35% for the exposure light and is formed on the mask substrate; and a light-shielding film that is formed on the phase shift film and has a second pattern including an opening pattern that exposes the phase shift film at the periphery of the contact hole pattern, wherein when an image of the first pattern is projected onto an exposed member by the exposure light via a projection optical system, a formation pattern that is formed corresponding to the contact hole pattern has a target diameter of 1.25 μm to 1.45 μm, the length of one side of the contact hole pattern is 2.00 μm to 2.29 μm, the shape of the opening pattern of the light-shielding film is a polygon having sides that are substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon that is parallel to the first side is 1.36 μm to 1.79 μm.

[0008] According to a fourth aspect of the disclosure, a mask comprises: a mask substrate that transmits exposure light; a phase shift film that has a first pattern including a substantially square contact hole pattern and that has a transmittance of 35% for the exposure light and is formed on the mask substrate; and a light-shielding film that is formed on the phase shift film and has a second pattern including an opening pattern that exposes the phase shift film at the periphery of the contact hole pattern, wherein the length of one side of the contact hole pattern is 2.00 μm to 2.29 μm, the shape of the opening pattern of the light-shielding film is a polygon having sides that are substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon that is parallel to the first side is 1.36 μm to 1.79 μm.

[0009] According to a fifth aspect of the disclosure, a mask comprises: a mask substrate that transmits exposure light of wavelength λ; a phase shift film having a first pattern including a substantially square contact hole pattern and having a transmittance of 35% for the exposure light, and formed on the mask substrate; and a light-shielding film formed on the phase shift film, having a second pattern including an opening pattern that exposes the phase shift film at the periphery of the contact hole pattern, wherein when an image of the first pattern is projected onto an exposed member by the exposure light via a projection optical system having a numerical aperture NA, a target diameter of a formation pattern formed corresponding to the contact hole pattern is 0.35λ / NA to 0.42λ / NA, the length of one side of the contact hole pattern is 0.63λ / NA to 0.73λ / NA, the shape of the opening pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to the first side is 0.32λ / NA to 0.53λ / NA.

[0010] According to a sixth aspect of the disclosure, a mask comprises: a mask substrate that transmits exposure light of wavelength λ; a phase shift film having a transmittance of 35% for the exposure light and having a first pattern including a substantially square contact hole pattern and formed on the mask substrate; and a light-shielding film formed on the phase shift film and having a second pattern including an opening pattern that exposes the phase shift film at the periphery of the contact hole pattern, wherein the length of one side of the contact hole pattern is 0.63λ / NA to 0.73λ / NA, the shape of the opening pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to the one side is 0.32λ / NA to 0.53λ / NA, and NA represents the numerical aperture of a projection optical system that projects an image of the first pattern onto an exposed member using the exposure light.

[0011] According to a seventh aspect of the disclosure, a mask comprises: a mask substrate that transmits exposure light; a phase shift film that has a first pattern including a substantially square contact hole pattern and that has a transmittance of 35% for the exposure light and is formed on the mask substrate; and a light-shielding film that is formed on the phase shift film and has a second pattern including an opening pattern that exposes the phase shift film at the periphery of the contact hole pattern, wherein when an image of the first pattern is projected onto an exposed member by the exposure light via a projection optical system, a formation pattern that is formed corresponding to the contact hole pattern has a target diameter of 0.99 μm to 1.17 μm, the length of one side of the contact hole pattern is 1.78 μm to 2.04 μm, the shape of the opening pattern of the light-shielding film is a polygon having sides that are substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon that is parallel to the first side is 0.90 μm to 1.48 μm.

[0012] According to an eighth aspect of the disclosure, a mask comprises: a mask substrate that transmits exposure light; a phase shift film that has a first pattern including a substantially square contact hole pattern and that has a transmittance of 35% for the exposure light and that is formed on the mask substrate; and a light-shielding film that is formed on the phase shift film and that has a second pattern that includes an opening pattern that exposes the phase shift film at the periphery of the contact hole pattern, wherein the length of one side of the contact hole pattern is 1.78 μm to 2.04 μm, the shape of the opening pattern of the light-shielding film is a polygon having sides that are substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon that is parallel to the first side is 0.90 μm to 1.48 μm.

[0013] According to a ninth aspect of the disclosure, a mask comprises: a mask substrate that transmits exposure light of a wavelength λ; a phase shift film having a first pattern including a substantially square contact hole pattern and having a transmittance of 35% for the exposure light, and formed on the mask substrate; and a light-shielding film formed on the phase shift film, having a second pattern including an opening pattern that exposes the phase shift film at the periphery of the contact hole pattern, wherein when an image of the first pattern is projected onto an exposed member by the exposure light via a projection optical system having a numerical aperture NA, a target diameter of a formation pattern formed corresponding to the contact hole pattern is 0.31λ / NA to 0.37λ / NA, the length of one side of the contact hole pattern is 0.60λ / NA to 0.70λ / NA, the shape of the opening pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to the first side is 0.28λ / NA to 0.45λ / NA.

[0014] According to a tenth aspect of the disclosure, a mask comprises: a mask substrate that transmits exposure light of wavelength λ; a phase shift film that has a transmittance of 35% for the exposure light and has a first pattern including a substantially square contact hole pattern and is formed on the mask substrate; and a light-shielding film that is formed on the phase shift film and has a second pattern including an opening pattern that exposes the phase shift film at the periphery of the contact hole pattern, wherein the length of one side of the contact hole pattern is 0.60λ / NA to 0.70λ / NA, the shape of the opening pattern of the light-shielding film is a polygon having sides that are substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon that is parallel to the one side is 0.28λ / NA to 0.45λ / NA, and NA represents the numerical aperture of a projection optical system that projects an image of the first pattern onto an exposed member using the exposure light.

[0015] According to an eleventh aspect of the disclosure, a mask comprises: a mask substrate that transmits exposure light; a phase shift film that has a first pattern including a substantially square contact hole pattern and that has a transmittance of 35% for the exposure light and is formed on the mask substrate; and a light-shielding film that is formed on the phase shift film and has a second pattern including an opening pattern that exposes the phase shift film at the periphery of the contact hole pattern, wherein when an image of the first pattern is projected onto an exposed member by the exposure light via a projection optical system, a formation pattern that is formed corresponding to the contact hole pattern has a target diameter of 0.88 μm to 1.03 μm, the length of one side of the contact hole pattern is 1.69 μm to 1.96 μm, the shape of the opening pattern of the light-shielding film is a polygon having sides that are substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon that is parallel to the first side is 0.80 μm to 1.25 μm.

[0016] According to a twelfth aspect of the disclosure, a mask comprises: a mask substrate that transmits exposure light; a phase shift film that has a first pattern including a substantially square contact hole pattern and that has a transmittance of 35% for the exposure light and is formed on the mask substrate; and a light-shielding film that is formed on the phase shift film and has a second pattern that includes an opening pattern that exposes the phase shift film at the periphery of the contact hole pattern, wherein the length of one side of the contact hole pattern is 1.69 μm to 1.96 μm, the shape of the opening pattern of the light-shielding film is a polygon having sides that are substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon that is parallel to the first side is 0.80 μm to 1.25 μm.

[0017] According to a thirteenth aspect of the disclosure, a mask comprises: a mask substrate that transmits exposure light of a wavelength λ; a phase shift film having a first pattern including a substantially square contact hole pattern and having a transmittance of 35% for the exposure light, and formed on the mask substrate; and a light-shielding film formed on the phase shift film, having a second pattern including an opening pattern that exposes the phase shift film at the periphery of the contact hole pattern, wherein when an image of the first pattern is projected onto an exposed member by the exposure light via a projection optical system having a numerical aperture NA, a formation pattern formed corresponding to the contact hole pattern has a target diameter of 0.45λ / NA to 0.52λ / NA, a length of one side of the contact hole pattern is 0.74λ / NA to 0.78λ / NA, a shape of the opening pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and a distance between one side of the contact hole pattern and one side of the polygon parallel to the first side is 0.39λ / NA to 0.52λ / NA.

[0018] According to a fourteenth aspect of the disclosure, a mask comprises: a mask substrate that transmits exposure light of wavelength λ; a phase shift film that has a first pattern including a substantially square contact hole pattern and that has a transmittance of 35% for the exposure light and is formed on the mask substrate; and a light-shielding film that is formed on the phase shift film and has a second pattern including an opening pattern that exposes the phase shift film at the periphery of the contact hole pattern, wherein the length of one side of the contact hole pattern is 0.74λ / NA to 0.78λ / NA, the shape of the opening pattern of the light-shielding film is a polygon having sides that are substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon that is parallel to the one side is 0.39λ / NA to 0.52λ / NA, and NA represents the numerical aperture of a projection optical system that projects an image of the first pattern onto an exposed member using the exposure light.

[0019] According to a fifteenth aspect of the disclosure, a mask comprises: a mask substrate that transmits exposure light; a phase shift film that has a first pattern including a substantially square contact hole pattern and that has a transmittance of 35% for the exposure light and is formed on the mask substrate; and a light-shielding film that is formed on the phase shift film and has a second pattern including an opening pattern that exposes the phase shift film at the periphery of the contact hole pattern, wherein when an image of the first pattern is projected onto an exposed member by the exposure light via a projection optical system, a formation pattern that is formed corresponding to the contact hole pattern has a target diameter of 1.27 μm to 1.45 μm, the length of one side of the contact hole pattern is 2.09 μm to 2.20 μm, the shape of the opening pattern of the light-shielding film is a polygon having sides that are substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon that is parallel to the first side is 1.10 μm to 1.47 μm.

[0020] According to a sixteenth aspect of the disclosure, a mask comprises: a mask substrate that transmits exposure light; a phase shift film that has a first pattern including a substantially square contact hole pattern and that has a transmittance of 35% for the exposure light and is formed on the mask substrate; and a light-shielding film that is formed on the phase shift film and has a second pattern that includes an opening pattern that exposes the phase shift film at the periphery of the contact hole pattern, wherein the length of one side of the contact hole pattern is 2.09 μm to 2.20 μm, the shape of the opening pattern of the light-shielding film is a polygon having sides that are substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon that is parallel to the first side is 1.10 μm to 1.47 μm.

[0021] According to a seventeenth aspect of the disclosure, a mask comprises: a mask substrate that transmits exposure light of a wavelength λ; a phase shift film having a first pattern including a substantially square contact hole pattern and having a transmittance of 35% for the exposure light, and formed on the mask substrate; and a light-shielding film formed on the phase shift film, having a second pattern including an opening pattern that exposes the phase shift film at the periphery of the contact hole pattern, wherein when an image of the first pattern is projected onto an exposed member by the exposure light via a projection optical system having a numerical aperture NA, a target diameter of a formation pattern formed corresponding to the contact hole pattern is 0.36λ / NA to 0.42λ / NA, the length of one side of the contact hole pattern is 0.61λ / NA to 0.67λ / NA, the shape of the opening pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to the first side is 0.23λ / NA to 0.35λ / NA.

[0022] According to an eighteenth aspect of the disclosure, a mask comprises: a mask substrate that transmits exposure light of wavelength λ; a phase shift film that has a transmittance of 35% for the exposure light and has a first pattern including a substantially square contact hole pattern and is formed on the mask substrate; and a light-shielding film that is formed on the phase shift film and has a second pattern including an opening pattern that exposes the phase shift film at the periphery of the contact hole pattern, wherein the length of one side of the contact hole pattern is 0.61λ / NA to 0.67λ / NA, the shape of the opening pattern of the light-shielding film is a polygon having sides that are substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon that is parallel to the one side is 0.23λ / NA to 0.35λ / NA, and NA represents the numerical aperture of a projection optical system that projects an image of the first pattern onto an exposed member using the exposure light.

[0023] According to a nineteenth aspect of the disclosure, a mask comprises: a mask substrate that transmits exposure light; a phase shift film that has a first pattern including a substantially square contact hole pattern and that has a transmittance of 35% for the exposure light and is formed on the mask substrate; and a light-shielding film that is formed on the phase shift film and has a second pattern including an opening pattern that exposes the phase shift film at the periphery of the contact hole pattern, wherein when an image of the first pattern is projected onto an exposed member by the exposure light via a projection optical system, a formation pattern that is formed corresponding to the contact hole pattern has a target diameter of 1.02 μm to 1.17 μm, the length of one side of the contact hole pattern is 1.72 μm to 1.87 μm, the shape of the opening pattern of the light-shielding film is a polygon having sides that are substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon that is parallel to the first side is 0.65 μm to 0.98 μm.

[0024] According to a twentieth aspect of the disclosure, a mask comprises: a mask substrate that transmits exposure light; a phase shift film that has a first pattern including a substantially square contact hole pattern and that has a transmittance of 35% for the exposure light and that is formed on the mask substrate; and a light-shielding film that is formed on the phase shift film and that has a second pattern including an opening pattern that exposes the phase shift film at the periphery of the contact hole pattern, wherein the length of one side of the contact hole pattern is 1.72 μm to 1.87 μm, the shape of the opening pattern of the light-shielding film is a polygon having sides that are substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon that is parallel to the first side is 0.65 μm to 0.98 μm.

[0025] According to a twenty-first aspect of the disclosure, a mask comprises: a mask substrate that transmits exposure light of a wavelength λ; a phase shift film having a first pattern including a substantially square contact hole pattern and having a transmittance of 35% for the exposure light, and formed on the mask substrate; and a light-shielding film formed on the phase shift film, having a second pattern including an opening pattern that exposes the phase shift film at the periphery of the contact hole pattern, wherein when an image of the first pattern is projected onto an exposed member by the exposure light via a projection optical system having a numerical aperture NA, a formation pattern formed corresponding to the contact hole pattern has a target diameter of 0.32λ / NA to 0.37λ / NA, the length of one side of the contact hole pattern is 0.59λ / NA to 0.63λ / NA, the shape of the opening pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to the first side is 0.24λ / NA to 0.33λ / NA.

[0026] According to a 22nd aspect of the disclosure, a mask comprises: a mask substrate that transmits exposure light of wavelength λ; a phase shift film that has a transmittance of 35% for the exposure light and has a first pattern including a substantially square contact hole pattern and is formed on the mask substrate; and a light-shielding film that is formed on the phase shift film and has a second pattern including an opening pattern that exposes the phase shift film at the periphery of the contact hole pattern, wherein the length of one side of the contact hole pattern is 0.59λ / NA to 0.63λ / NA, the shape of the opening pattern of the light-shielding film is a polygon having sides that are substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon that is parallel to the one side is 0.24λ / NA to 0.33λ / NA, and NA represents the numerical aperture of a projection optical system that projects an image of the first pattern onto an exposed member using the exposure light.

[0027] According to a 23rd aspect of the disclosure, a mask comprises: a mask substrate that transmits exposure light; a phase shift film that has a first pattern including a substantially square contact hole pattern and that has a transmittance of 35% for the exposure light and is formed on the mask substrate; and a light-shielding film that is formed on the phase shift film and has a second pattern including an opening pattern that exposes the phase shift film at the periphery of the contact hole pattern, wherein when an image of the first pattern is projected onto an exposed member by the exposure light via a projection optical system, a formation pattern that is formed corresponding to the contact hole pattern has a target diameter of 0.90 μm to 1.03 μm, the length of one side of the contact hole pattern is 1.67 μm to 1.76 μm, the shape of the opening pattern of the light-shielding film is a polygon having sides that are substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon that is parallel to the first side is 0.68 μm to 0.92 μm.

[0028] According to a 24th aspect of the disclosure, a mask comprises: a mask substrate that transmits exposure light; a phase shift film that has a first pattern including a substantially square contact hole pattern and that has a transmittance of 35% for the exposure light and that is formed on the mask substrate; and a light-shielding film that is formed on the phase shift film and that has a second pattern including an opening pattern that exposes the phase shift film at the periphery of the contact hole pattern, wherein the length of one side of the contact hole pattern is 1.67 μm to 1.76 μm, the shape of the opening pattern of the light-shielding film is a polygon having sides that are substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon that is parallel to the first side is 0.68 μm to 0.92 μm.

[0029] According to a 25th aspect of the disclosure, a mask comprises a mask substrate that transmits exposure light, a phase shift film having a first pattern including a substantially square contact hole pattern and formed on the mask substrate, and a light-shielding film having a second pattern including an opening pattern that exposes the phase shift film at the periphery of the contact hole pattern, wherein the length of one side of the contact hole pattern is 2.00 μm to 2.29 μm, the opening pattern of the light-shielding film has a side that is substantially parallel to at least one side of the contact hole pattern, and the distance between one side of the contact hole pattern and a side parallel to the one side is 1.36 μm to 1.79 μm.

[0030] According to a 26th aspect of the disclosure, a mask comprises a mask substrate that transmits exposure light, a phase shift film having a first pattern including a substantially square contact hole pattern and formed on the mask substrate, and a light-shielding film having a second pattern including an opening pattern that exposes the phase shift film at the periphery of the contact hole pattern, wherein the length of one side of the contact hole pattern is 2.09 μm to 2.20 μm, the opening pattern of the light-shielding film has a side that is substantially parallel to at least one side of the contact hole pattern, and the distance between one side of the contact hole pattern and a side parallel to the one side is 1.10 μm to 1.47 μm.

[0031] According to a 27th aspect of the disclosure, a mask comprises: a mask substrate that transmits exposure light; a phase shift film having a first pattern including first openings as contact holes and formed on the mask substrate; and a light-shielding film having a second pattern including second openings formed around the first openings and defining the outer edge of the phase shift film and formed on the mask substrate, wherein a first portion of the inner edge of the phase shift film defined by the first opening and a second portion of the outer edge of the phase shift film defined by the second opening extend substantially parallel to each other in a first direction, the width of the phase shift film between the first and second portions in a second direction intersecting the first direction is 1.36 μm to 1.79 μm, and the size of the first opening in at least one of the first and second directions is 2.00 μm to 2.29 μm.

[0032] According to a 28th aspect of the disclosure, a mask comprises: a mask substrate that transmits exposure light; a phase shift film having a first pattern including first openings as contact holes and formed on the mask substrate; and a light-shielding film having a second pattern including second openings formed around the first openings and defining outer edges of the phase shift film and formed on the mask substrate, wherein a first portion of the inner edge of the phase shift film defined by the first opening and a second portion of the outer edge of the phase shift film defined by the second opening extend substantially parallel to each other in a first direction, a width of the phase shift film between the first and second portions in a second direction intersecting the first direction is 1.10 μm to 1.47 μm, and a size of the first opening in at least one of the first and second directions is 2.09 μm to 2.20 μm.

[0033] According to a 29th aspect of the disclosure, the exposure method includes illuminating the mask with exposure light of wavelength λ and forming an image corresponding to the first pattern on an exposed member via a projection optical system having a numerical aperture NA.

[0034] The configurations of the embodiments described below may be modified as appropriate, and at least a portion of the configuration may be replaced with other components. Furthermore, components that are not particularly limited in terms of their placement may be placed in any position that can achieve their function, not limited to the placement disclosed in the embodiments.

[0035] FIG. 1 is a schematic diagram showing the configuration of an exposure apparatus according to one embodiment. FIG. 2A is a plan view of a phase shift mask, and FIG. 2B is a cross-sectional view taken along line A-A in FIG. 2A. FIG. 3A is a plan view illustrating a phase shift film, and FIG. 3B is a plan view illustrating a light-shielding film. FIG. 4 is an enlarged plan view of a contact hole pattern included in a first pattern of the phase shift film and an opening pattern included in a second pattern of the light-shielding film. FIG. 5A is a plan view showing a phase shift mask according to Comparative Example 1, and FIG. 5B is a cross-sectional view taken along line A-A in FIG. 5A. FIG. 6A is a plan view of a phase shift mask according to a second embodiment, and FIG. 6B is a cross-sectional view taken along line A-A in FIG. 6A. FIG. 7 is an enlarged plan view of a contact hole pattern included in a first pattern of the phase shift film and an opening pattern included in a second pattern of the light-shielding film in the second embodiment. 8A and 8B are diagrams showing other examples of the shape of the opening pattern, and Fig. 9 is a diagram showing other examples of the shape of the opening pattern.

[0036] First Embodiment An exposure apparatus 100 according to a first embodiment will be described with reference to FIGS. 1 to 4. FIG.

[0037] (Configuration of Exposure Apparatus) FIG. 1 is a diagram that shows roughly the configuration of an exposure apparatus 100 according to the first embodiment.

[0038] Exposure apparatus 100 includes a light source LS, an illumination optical system 101, a mask stage 103 that holds a phase shift mask 300, a projection optical system 104, a substrate stage 105 that holds a photosensitive substrate P that is an exposed member, and a drive mechanism 106 that moves substrate stage 105 within a horizontal plane. In this embodiment, the scanning direction of substrate stage 105 is defined as the X direction, the direction perpendicular to the X direction within the horizontal plane is defined as the Y direction, and the direction perpendicular to the X and Y directions is defined as the Z direction.

[0039] The light source LS emits exposure light. The emitted exposure light enters the illumination optical system 101, where it is adjusted to a predetermined luminous flux, and is then irradiated onto the phase shift mask 300 held on the mask stage 103. In this embodiment, the σ value of the illumination optical system 101 is 0.5 or less.

[0040] The projection optical system 104 projects an image of the pattern of the phase shift mask 300 onto a predetermined position on the photosensitive substrate P. As a result, a pattern (formed pattern) corresponding to the pattern of the phase shift mask 300 is formed on the photosensitive substrate P.

[0041] Next, a detailed description will be given of the phase shift mask 300 according to this embodiment. Figure 2A is a plan view of the phase shift mask 300, and Figure 2B is a cross-sectional view taken along line AA in Figure 2A.

[0042] As shown in FIG. 2B, the phase shift mask 300 includes a mask substrate 10, a phase shift film 20 formed on a surface 10a of the mask substrate 10, and a light-shielding film 30 formed on the phase shift film 20.

[0043] The mask substrate 10 transmits exposure light of wavelength λ.

[0044] 3A is a plan view illustrating the phase shift film 20. As shown in FIG. 3A, the phase shift film 20 has a first pattern PT1 including a contact hole pattern 20a. The contact hole pattern 20a is an opening (first opening) serving as a contact hole. In this embodiment, the contact hole pattern 20a has a substantially square planar shape. Here, the term "substantially square" means any shape that is recognized as a square when viewed overall. For example, the lengths of the sides may vary to the extent of manufacturing tolerance, and the corners may be chamfered or rounded.

[0045] In this embodiment, the transmittance of the phase shift film 20 to the exposure light is 35%. Here, "the transmittance is 35%" includes cases where the transmittance differs from 35% by a manufacturing error. For example, when the transmittance is 35%, the transmittance is within the range of 35%±5%.

[0046] FIG. 3B is a plan view illustrating the light-shielding film 30. As shown in FIG. 3B, the light-shielding film 30 has a second pattern PT2 including an opening pattern 30a. In this embodiment, the opening pattern 30a has a substantially square planar shape. Here, a substantially square shape may be any shape that is recognized as a square when viewed overall. For example, the lengths of the sides may vary to the extent of manufacturing tolerance, and the corners may be chamfered or rounded. In this embodiment, the light-shielding film 30 has a transmittance of 0% for exposure light. In other words, the light-shielding film 30 does not transmit exposure light.

[0047] 2A, the opening pattern 30a exposes the phase shift film 20 at the periphery of the contact hole pattern 20a. In other words, the second pattern PT2 includes an opening (second opening) that defines the outer edge of the phase shift film 20 formed around the contact hole pattern 20a (opening as a contact hole).

[0048] The inventors have discovered that when an image of a first pattern PT1 is projected onto a photosensitive substrate P using a phase shift film 20 having a transmittance of 35% for exposure light having a wavelength λ, the takt time required for forming a pattern on the photosensitive substrate P can be reduced by appropriately setting the length of one side of the contact hole pattern 20a and the distance between one side of the contact hole pattern 20a and one side of the opening pattern 30a in accordance with the target diameter of the pattern to be formed on the photosensitive substrate P corresponding to the contact hole pattern 20a. This point will be explained below. In the following explanation, the pattern formed on the photosensitive substrate P corresponding to the contact hole pattern 20a when the image of the first pattern PT1 is projected onto the photosensitive substrate P is referred to as a contact hole resist pattern.

[0049] FIG. 4 is an enlarged plan view of the contact hole pattern 20a included in the first pattern PT1 of the phase shift film 20 and the opening pattern 30a included in the second pattern PT2 of the light-shielding film 30.

[0050] 4, the length of one side of contact hole pattern 20a is L, and the distance between one side of contact hole pattern 20a and one side of opening pattern 30a parallel to that side (hereinafter referred to as rim width) is W. Here, length L can also be considered the size of the opening as a contact hole. Also, rim width W can also be considered the width of phase shift film 20 between a part of inner edge 21 of phase shift film 20 defined by the opening as a contact hole and a part of outer edge 22 of phase shift film 20 defined by the opening corresponding to opening pattern 30a.

[0051] When the target diameter of the contact hole resist pattern is 0.45λ / NA to 0.52λ / NA (λ is the wavelength of the exposure light, and NA is the numerical aperture of the projection optical system 104), the length L is set to 0.74λ / NA to 0.78λ / NA and the rim width W is set to 0.39λ / NA to 0.52λ / NA. When a phase shift mask 300 having length L and rim width W set in this manner is illuminated with exposure light of wavelength λ by an illumination optical system 101 having a σ value of 0.5 or less, and an image of first pattern PT1 is projected onto photosensitive substrate P via projection optical system 104 having a numerical aperture NA, the takt time for forming a resist pattern of contact holes with a diameter of 0.45λ / NA to 0.52λ / NA can be shortened compared to when a mask having a phase shift film with a transmittance of approximately 5% is used.

[0052] In other words, in exposure apparatus 100 equipped with illumination optical system 101 that emits exposure light of wavelength λ and projection optical system 104 with a numerical aperture NA, when using phase shift mask 300 whose length L is set to 0.74λ / NA to 0.78λ / NA and whose rim width W is set to 0.39λ / NA to 0.52λ / NA, by setting the σ value of illumination optical system 101 to 0.5 or less, it is possible to form a resist pattern for contact holes with a diameter of 0.45λ / NA to 0.52λ / NA in a shorter takt time than when using a mask having a phase shift film with a transmittance of approximately 5%.

[0053] For example, when the wavelength of the exposure light is 365 nm and the numerical aperture of the projection optical system 104 is 0.130, 0.45λ / NA to 0.52λ / NA is approximately 1.27 μm to 1.45 μm. In this case, by using a phase shift mask 300 having a phase shift film 20 with a transmittance of 35% for light with a wavelength of 365 nm, with a length L set to 2.09 μm to 2.20 μm and a rim width W set to 1.10 μm to 1.47 μm, a resist pattern for contact holes with a diameter of 1.27 μm to 1.45 μm can be formed in a shorter takt time than when using a mask with a phase shift film with a transmittance of approximately 5%.

[0054] (Simulation 1) The film reduction, depth of focus (DOF), dose required to form the resist pattern of the contact holes, and mask error enhancement factor (MEEF) were simulated when forming resist patterns of contact holes with diameters of 1.27 μm to 1.45 μm using phase shift masks 300 with different lengths L and rim widths W. The film reduction is the ratio of the amount of reduction in the photosensitive material after the resist pattern is formed to the initial thickness of the photosensitive material, such as resist, on the photosensitive substrate P at the periphery of the resist pattern of the contact holes (initial thickness - thickness of the photosensitive material after the resist pattern is formed). The MEEF is an index indicating the degree to which manufacturing errors in the mask pattern are amplified on the photosensitive substrate P.

[0055] The σ value of the illumination optical system 101 was set to 0.5, the wavelength λ of the exposure light was set to 365 nm (0.365 μm), and the numerical aperture NA was set to 0.130.

[0056] Example 1-1 The conditions for Example 1-1 were as follows: Transmittance of light with a wavelength of 365 nm through phase shift film 20: 35% Target diameter D of contact hole resist pattern: 1.27 μm Shape of opening pattern 30 a of light-shielding film 30: substantially square Length L of one side of contact hole pattern 20 a: 2.09 μm Rim width W: 1.10 μm

[0057] Example 1-2 The conditions for Example 1-2 are as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 1.27 μm Shape of the opening pattern 30 a of the light-shielding film 30: substantially square Length L of one side of the contact hole pattern 20 a: 2.09 μm Rim width W: 1.47 μm

[0058] Example 1-3 The conditions for Example 1-3 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 1.27 μm Shape of the opening pattern 30 a of the light-shielding film 30: substantially square Length L of one side of the contact hole pattern 20 a: 2.20 μm Rim width W: 1.10 μm

[0059] Example 1-4 The conditions for Example 1-4 were as follows: Transmittance of 365 nm light through phase shift film 20: 35% Target diameter D of contact hole resist pattern: 1.27 μm Shape of opening pattern 30 a of light-shielding film 30: substantially square Length L of one side of contact hole pattern 20 a: 2.20 μm Rim width W: 1.47 μm

[0060] Example 1-5 The conditions for Example 1-5 were as follows: Transmittance of 365 nm light through phase shift film 20: 35% Target diameter D of contact hole resist pattern: 1.45 μm Shape of opening pattern 30 a of light-shielding film 30: substantially square Length L of one side of contact hole pattern 20 a: 2.09 μm Rim width W: 1.10 μm

[0061] Example 1-6 The conditions for Example 1-6 were as follows: Transmittance of 365 nm light through phase shift film 20: 35% Target diameter D of contact hole resist pattern: 1.45 μm Shape of opening pattern 30 a of light-shielding film 30: substantially square Length L of one side of contact hole pattern 20 a: 2.09 μm Rim width W: 1.47 μm

[0062] Example 1-7 The conditions for Example 1-7 were as follows: Transmittance of 365 nm light through phase shift film 20: 35% Target diameter D of contact hole resist pattern: 1.45 μm Shape of opening pattern 30 a in light-shielding film 30: substantially square Length L of one side of contact hole pattern 20 a: 2.20 μm Rim width W: 1.10 μm

[0063] Example 1-8 The conditions for Example 1-8 were as follows: Transmittance of 365 nm light through phase shift film 20: 35% Target diameter D of contact hole resist pattern: 1.45 μm Shape of opening pattern 30 a of light-shielding film 30: substantially square Length L of one side of contact hole pattern 20 a: 2.20 μm Rim width W: 1.47 μm

[0064] Comparative Example 1 Figure 5(A) is a plan view showing a phase shift mask 600 according to Comparative Example 1, and Figure 5(B) is a cross-sectional view taken along line A-A in Figure 5(A). Phase shift mask 600 includes a phase shift film 200 formed on surface 10a of mask substrate 10, and a light-shielding film 210 formed on phase shift film 200. Phase shift film 200 has a pattern including substantially square contact hole patterns 200a. Light-shielding film 210 has a pattern including opening patterns 210a. The transmittance of light with a wavelength of 365 nm through light-shielding film 210 is 0%.

[0065] The conditions of Comparative Example 1 were as follows: Transmittance of light with a wavelength of 365 nm of phase shift film 200: 5.2% Target diameter D of contact hole resist pattern: 1.40 μm Shape of opening pattern 210 a of light-shielding film 210: approximately square Length of one side of contact hole pattern 200 a Lc: 1.60 μm Rim width Wc: 1.00 μm Other conditions were the same as those of Examples 1-1 to 1-8.

[0066] The simulation results are shown in Tables 1 and 2. In Tables 1 and 2, the target diameter D of the contact hole resist pattern, the side lengths L and Lc of the contact hole pattern, and the rim widths W and Wc are normalized by λ / NA, and the DOF is normalized by λ / NA ２The values ​​normalized by and are also shown.

[0067]

[0068] As shown in Tables 1 and 2, in Examples 1-1, 1-2, and 1-4 to 1-8, the DOF was 14.4 μm (DOF / (λ / NA ２ ): 0.67), and in Example 1-3, the DOF is approximately equal to that of Comparative Example 1, and it can be said that a sufficient DOF is ensured. Furthermore, a film loss of 25% or less is considered sufficient for practical use, and the film loss in Comparative Example 1 and Examples 1-1 to 1-8 is 25% or less.

[0069] Comparing Comparative Example 1 with Examples 1-1 to 1-8, the required dose in Examples 1-1 to 1-8 is smaller than that in Comparative Example 1. The required dose and the takt time for resist pattern formation are generally linearly related. That is, the smaller the required dose, the shorter the takt time, and the larger the required dose, the longer the takt time. Therefore, Simulation 1 confirmed that by using a phase shift mask 300 with a length L set to 2.09 μm to 2.20 μm (0.74 λ / NA to 0.78 λ / NA) and a rim width W set to 1.10 μm to 1.47 μm (0.39 λ / NA to 0.52 λ / NA), it is possible to shorten the takt time when forming a resist pattern for a contact hole with a target diameter D of 1.27 μm to 1.45 μm (0.45 λ / NA to 0.52 λ / NA).

[0070] Furthermore, the MEEF in Examples 1-1 and 1-2 was comparable to that in Comparative Example 1, while the MEEF in Examples 1-3 to 1-8 was smaller than that in Comparative Example 1. When the MEEF is large, if the manufacturing error of the phase shift mask increases, the difference between the target diameter of the contact hole resist pattern and the exposure result (the actually formed resist pattern) increases, resulting in greater production variation. It was confirmed that in Examples 1-1 and 1-2, the production variation of the contact hole resist pattern formed on the photosensitive substrate P could be reduced to the same level as in Comparative Example 1, and in Examples 1-3 to 1-8, the production variation of the contact hole resist pattern formed on the photosensitive substrate P could be reduced compared to Comparative Example 1.

[0071] In Simulation 1, the σ value of the illumination optical system 101 was set to 0.5, but the DOF increases as the σ value decreases. Furthermore, for film loss, required dose, and MEEF, results with similar trends to those of Simulation 1 can be obtained even if the σ value is less than 0.5.

[0072] Next, a description will be given of the case where the target diameter D is smaller. The inventors have discovered that by appropriately setting the length L and the rim width W in accordance with the σ value of the illumination optical system 101, it is possible to form a resist pattern for a contact hole with a smaller target diameter D, for example, a target diameter D of 0.42λ / NA or less, while keeping the resist film loss on the photosensitive substrate P, the DOF, and the takt time within practical ranges.

[0073] Specifically, if the σ value of the illumination optical system 101 of the exposure apparatus 100 is 0.4 or less and the target diameter of the contact hole resist pattern is 0.36λ / NA to 0.42λ / NA, by setting the length L to 0.61λ / NA to 0.67λ / NA and the rim width W to 0.23λ / NA to 0.35λ / NA, it is possible to form a contact hole resist pattern with a diameter of 0.36λ / NA to 0.42λ / NA while keeping the resist film loss, DOF, and takt time within practical ranges.

[0074] In other words, in exposure apparatus 100 equipped with illumination optical system 101 that emits exposure light of wavelength λ and projection optical system 104 with a numerical aperture of NA, when using phase shift mask 300 whose length L is set to 0.61λ / NA to 0.67λ / NA and whose rim width W is set to 0.23λ / NA to 0.35λ / NA, by setting the σ value of illumination optical system 101 to 0.4 or less, it is possible to form a resist pattern for contact holes with a diameter of 0.36λ / NA to 0.42λ / NA while keeping resist film loss, DOF, and takt time within practical ranges.

[0075] For example, when the wavelength λ of the exposure light is 365 nm and the numerical aperture NA of the projection optical system 104 is 0.130, 0.36λ / NA to 0.42λ / NA is 1.02 μm to 1.17 μm, the length L: 0.61λ / NA to 0.67λ / NA is 1.72 μm to 1.87 μm, and the rim width W: 0.23λ / NA to 0.35λ / NA is 0.65 μm to 0.98 μm.

[0076] Furthermore, when the σ value of the illumination optical system 101 of the exposure apparatus 100 is 0.35 or less and the target diameter of the contact hole resist pattern is 0.32λ / NA to 0.37λ / NA, by setting the length L to 0.59λ / NA to 0.63λ / NA and the rim width W to 0.24λ / NA to 0.33λ / NA, it is possible to form a contact hole resist pattern with a diameter of 0.32λ / NA to 0.37λ / NA while keeping the resist film loss, DOF, and takt time within practical ranges.

[0077] In other words, in exposure apparatus 100 equipped with illumination optical system 101 that emits exposure light of wavelength λ and projection optical system 104 with a numerical aperture of NA, when using phase shift mask 300 whose length L is set to 0.59λ / NA to 0.63λ / NA and whose rim width W is set to 0.24λ / NA to 0.33λ / NA, by setting the σ value of illumination optical system 101 to 0.35 or less, it is possible to form a resist pattern for contact holes with a diameter of 0.32λ / NA to 0.37λ / NA while keeping resist film loss, DOF, and takt time within practical ranges.

[0078] For example, when the wavelength λ of the exposure light is 365 nm and the numerical aperture NA of the projection optical system 104 is 0.130, 0.32λ / NA to 0.37λ / NA is 0.90 μm to 1.03 μm, the length L: 0.59λ / NA to 0.63λ / NA is 1.67 μm to 1.76 μm, and the rim width W: 0.24λ / NA to 0.33λ / NA is 0.68 μm to 0.92 μm.

[0079] (Simulation 2) Using phase shift masks 300 with different lengths L and rim widths W, resist patterns for contact holes with diameters of 1.02 μm to 1.17 μm were formed, and film loss, DOF, required dose, and MEEF were simulated.

[0080] The σ value of the illumination optical system 101 was set to 0.4, the wavelength λ of the exposure light was set to 365 nm (0.365 μm), and the numerical aperture NA was set to 0.130.

[0081] Example 2-1 The conditions for Example 2-1 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 1.02 μm Shape of the opening pattern 30 a of the light-shielding film 30: substantially square Length L of one side of the contact hole pattern 20 a: 1.72 μm Rim width W: 0.65 μm

[0082] Example 2-2 The conditions for Example 2-2 are as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 1.02 μm Shape of the opening pattern 30 a of the light-shielding film 30: substantially square Length L of one side of the contact hole pattern 20 a: 1.72 μm Rim width W: 0.98 μm

[0083] Example 2-3 The conditions for Example 2-3 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 1.02 μm Shape of the opening pattern 30 a of the light-shielding film 30: substantially square Length L of one side of the contact hole pattern 20 a: 1.87 μm Rim width W: 0.65 μm

[0084] Example 2-4 The conditions for Example 2-4 are as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 1.02 μm Shape of the opening pattern 30 a of the light-shielding film 30: substantially square Length L of one side of the contact hole pattern 20 a: 1.87 μm Rim width W: 0.98 μm

[0085] Example 2-5 The conditions for Example 2-5 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 1.17 μm Shape of the opening pattern 30 a of the light-shielding film 30: substantially square Length L of one side of the contact hole pattern 20 a: 1.72 μm Rim width W: 0.65 μm

[0086] Example 2-6 The conditions for Example 2-6 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 1.17 μm Shape of the opening pattern 30 a of the light-shielding film 30: substantially square Length L of one side of the contact hole pattern 20 a: 1.72 μm Rim width W: 0.98 μm

[0087] Example 2-7 The conditions for Example 2-7 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 1.17 μm Shape of the opening pattern 30 a of the light-shielding film 30: substantially square Length L of one side of the contact hole pattern 20 a: 1.87 μm Rim width W: 0.65 μm

[0088] Example 2-8 The conditions for Example 2-8 were as follows: Transmittance of light with a wavelength of 365 nm through phase shift film 20: 35% Target diameter D of contact hole resist pattern: 1.17 μm Shape of opening pattern 30 a of light-shielding film 30: substantially square Length L of one side of contact hole pattern 20 a: 1.87 μm Rim width W: 0.98 μm

[0089] 5A and 5B. The conditions for Comparative Example 2 are as follows: Transmittance of light with a wavelength of 365 nm through phase shift film 200: 5.2% Target diameter D of contact hole resist pattern: 1.10 μm Shape of opening pattern 210 a in light-shielding film 210: approximately square Length of one side of contact hole pattern 200 a, Lc: 1.50 μm Rim width Wc: 0.80 μm Other conditions were the same as those for Examples 2-1 to 2-8.

[0090] The simulation results are shown in Tables 3 and 4. In Tables 3 and 4, the target diameter D of the contact hole resist pattern, the side lengths L and Lc of the contact hole pattern, and the rim widths W and Wc are normalized by λ / NA, and the DOF is normalized by λ / NA ２ The values ​​normalized by and are also shown.

[0091]

[0092] In Tables 3 and 4, the DOFs of Examples 2-1 to 2-8 are the same as those of Comparative Example 2 (9.6 μm (DOF / (λ / NA ２ ): 0.45), and it can be said that a sufficient DOF is ensured. Furthermore, the film loss in Comparative Example 2 and Examples 2-1 to 2-8 is 25% or less.

[0093] In addition, in Examples 2-1 to 2-8, the required dose was 86.9 [mJ / cm 2 ], which was higher than that of Comparative Example 2. ２ Therefore, simulation 2 confirmed that by using phase shift mask 300 in which length L is set to 1.72 μm to 1.87 μm (0.61 λ / NA to 0.67 λ / NA) and rim width W is set to 0.65 μm to 0.98 μm (0.23 λ / NA to 0.35 λ / NA), the takt time can be shortened when forming a resist pattern for a contact hole with a target diameter D of 1.02 μm to 1.17 μm (0.36 λ / NA to 0.42 λ / NA).

[0094] Furthermore, the MEEF in Examples 2-2 to 2-4 and 2-6 to 2-8 is smaller than that in Comparative Example 2. Therefore, in Examples 2-2 to 2-4 and 2-6 to 2-8, the production variation in the resist pattern of the contact hole formed in the photosensitive substrate P can be made smaller than that in Comparative Example 2.

[0095] Simulation 2 confirmed that when a phase shift mask 300 having a length L set to 0.61λ / NA to 0.67λ / NA and a rim width W set to 0.23λ / NA to 0.35λ / NA is illuminated with exposure light of wavelength λ by an illumination optical system 101 having a σ value of 0.4 or less, and an image of a first pattern PT1 is projected onto a photosensitive substrate P via a projection optical system 104 having a numerical aperture NA, a resist pattern of a contact hole having a diameter of 0.36λ / NA to 0.42λ / NA can be formed while keeping the resist film loss, DOF, and takt time within practical ranges.

[0096] In Simulation 2, the σ value of the illumination optical system 101 was set to 0.4, but the DOF increases as the σ value decreases. Furthermore, for film loss, required dose, and MEEF, results with similar trends to those of Simulation 2 can be obtained even if the σ value is less than 0.4.

[0097] (Simulation 3) Using phase shift masks 300 with different lengths L and rim widths W, resist patterns for contact holes with diameters of 0.90 μm to 1.03 μm were formed, and film loss, DOF, required dose, and MEEF were simulated.

[0098] The σ value of the illumination optical system 101 was set to 0.35, the wavelength λ of the exposure light was set to 365 nm (0.365 μm), and the numerical aperture NA of the projection optical system 104 was set to 0.130.

[0099] Example 3-1 The conditions for Example 3-1 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 0.90 μm Shape of the opening pattern 30 a of the light-shielding film 30: substantially square Length L of one side of the contact hole pattern 20 a: 1.67 μm Rim width W: 0.68 μm

[0100] Example 3-2 The conditions for Example 3-2 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 0.90 μm Shape of the opening pattern 30 a of the light-shielding film 30: substantially square Length L of one side of the contact hole pattern 20 a: 1.67 μm Rim width W: 0.92 μm

[0101] Example 3-3 The conditions for Example 3-3 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 0.90 μm Shape of the opening pattern 30 a of the light-shielding film 30: substantially square Length L of one side of the contact hole pattern 20 a: 1.76 μm Rim width W: 0.68 μm

[0102] Example 3-4 The conditions for Example 3-4 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 0.90 μm Shape of the opening pattern 30 a of the light-shielding film 30: substantially square Length L of one side of the contact hole pattern 20 a: 1.76 μm Rim width W: 0.92 μm

[0103] Example 3-5 The conditions for Example 3-5 were as follows: Transmittance of light with a wavelength of 365 nm through phase shift film 20: 35% Target diameter D of contact hole resist pattern: 1.03 μm Shape of opening pattern 30 a of light-shielding film 30: substantially square Length L of one side of contact hole pattern 20 a: 1.67 μm Rim width W: 0.68 μm

[0104] Example 3-6 The conditions for Example 3-6 were as follows: Transmittance of light with a wavelength of 365 nm through phase shift film 20: 35% Target diameter D of contact hole resist pattern: 1.03 μm Shape of opening pattern 30 a of light-shielding film 30: substantially square Length L of one side of contact hole pattern 20 a: 1.67 μm Rim width W: 0.92 μm

[0105] Example 3-7 The conditions for Example 3-7 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 1.03 μm Shape of the opening pattern 30 a of the light-shielding film 30: substantially square Length L of one side of the contact hole pattern 20 a: 1.76 μm Rim width W: 0.68 μm

[0106] Example 3-8 The conditions for Example 3-8 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 1.03 μm Shape of the opening pattern 30 a of the light-shielding film 30: substantially square Length L of one side of the contact hole pattern 20 a: 1.76 μm Rim width W: 0.92 μm

[0107] 5A and 5B. The conditions for Comparative Example 3 are as follows: Transmittance of light with a wavelength of 365 nm through phase shift film 200: 5.2% Target diameter D of contact hole resist pattern: 1.00 μm Shape of opening pattern 210 a in light-shielding film 210: approximately square Length of one side of contact hole pattern 200 a, Lc: 1.45 μm Rim width Wc: 0.80 μm Other conditions are the same as those for Examples 3-1 to 3-8.

[0108] The simulation results are shown in Tables 5 and 6. In Tables 5 and 6, the target diameter D of the contact hole resist pattern, the side lengths L and Lc of the contact hole pattern, and the rim widths W and Wc are normalized by λ / NA, and the DOF is normalized by λ / NA ２ The values ​​normalized by and are also shown.

[0109]

[0110] As shown in Tables 5 and 6, the DOFs of Examples 3-1 to 3-8 are the same as or improved from the DOF of Comparative Example 3, and it can be said that a sufficient DOF is ensured. Furthermore, the film loss in Comparative Example 3 and Examples 3-1 to 3-8 is 25% or less, which is considered to be sufficient for practical use. Furthermore, the required doses of Examples 3-1 to 3-8 are the same as or improved from the DOF of Comparative Example 3. Therefore, resist patterns for contact holes with diameters of 0.90 μm to 1.03 μm can be formed in a takt time sufficient for practical use.

[0111] Simulation 3 confirmed that when a phase shift mask 300 having a length L set to 0.59λ / NA to 0.63λ / NA and a rim width W set to 0.24λ / NA to 0.33λ / NA is illuminated with exposure light of wavelength λ by an illumination optical system 101 having a σ value of 0.35 or less, and an image of a first pattern PT1 is projected onto a photosensitive substrate P via a projection optical system 104 having a numerical aperture NA, a resist pattern of a contact hole having a diameter of 0.32λ / NA to 0.37λ / NA can be formed while keeping the resist film loss, DOF, and takt time within practical ranges.

[0112] In Simulation 3, the σ value of the illumination optical system 101 was set to 0.35, but the DOF increases as the σ value decreases. Furthermore, for film loss, required dose, and MEEF, results with similar trends to those of Simulation 3 can be obtained even if the σ value is less than 0.35.

[0113] Second Embodiment In the first embodiment, the shape of the opening pattern 30a of the second pattern PT2 of the light-shielding film 30 was approximately square, but in the second embodiment, the shape of the opening pattern 30a is approximately octagonal with sides parallel to each side of the contact hole pattern 20a.

[0114] Fig. 6A is a plan view of a phase shift mask 300A according to the second embodiment, Fig. 6B is a cross-sectional view taken along line A-A in Fig. 6A, and Fig. 7 is an enlarged plan view of a contact hole pattern 20a included in a first pattern PT1 of a phase shift film 20 and an opening pattern 30a included in a second pattern PT2A of a light-shielding film 30.

[0115] Even when the shape of the opening pattern 30a is substantially octagonal, the rim width W is the distance between one side of the contact hole pattern 20a and the side of the opening pattern 30a that is parallel to the one side of the contact hole pattern 20a. Note that the substantially octagonal shape may be any shape that is recognized as an octagon when viewed as a whole, and may have chamfered or rounded corners, for example.

[0116] When the target diameter of the contact hole resist pattern is 0.45λ / NA to 0.52λ / NA (λ is the wavelength of the exposure light, and NA is the numerical aperture of the projection optical system 104), the length L is set to 0.71λ / NA to 0.82λ / NA, and the rim width W is set to 0.48λ / NA to 0.64λ / NA. When a phase shift mask 300A having length L and rim width W set in this manner is illuminated with exposure light of wavelength λ by an illumination optical system 101 having a σ value of 0.5 or less, and an image of first pattern PT1 is projected onto photosensitive substrate P via projection optical system 104 having a numerical aperture NA, the takt time for forming a resist pattern of contact holes having a diameter of 0.45λ / NA to 0.52λ / NA can be shortened compared to when a mask having a phase shift film with a transmittance of approximately 5% is used.

[0117] In other words, in exposure apparatus 100 equipped with illumination optical system 101 that emits exposure light of wavelength λ and projection optical system 104 with a numerical aperture NA, when using phase shift mask 300A whose length L is set to 0.71λ / NA to 0.82λ / NA and whose rim width W is set to 0.48λ / NA to 0.64λ / NA, by setting the σ value of illumination optical system 101 to 0.5 or less, it is possible to form a resist pattern for contact holes with a diameter of 0.45λ / NA to 0.52λ / NA in a shorter takt time than when using a mask having a phase shift film with a transmittance of approximately 5%.

[0118] For example, when the wavelength of the exposure light is 365 nm and the numerical aperture of the projection optical system 104 is 0.130, 0.45λ / NA to 0.52λ / NA is approximately 1.25 μm to 1.45 μm. In this case, by using a phase shift mask 300A having a phase shift film 20 with a transmittance of 35% for light with a wavelength of 365 nm, with a length L set to 2.00 μm to 2.29 μm and a rim width W set to 1.36 μm to 1.79 μm, a resist pattern for contact holes with a diameter of 1.25 μm to 1.45 μm can be formed in a shorter takt time than when using a mask with a phase shift film with a transmittance of approximately 5%.

[0119] (Simulation 4) Using phase shift masks 300A with different lengths L and rim widths W, film loss, DOF, required dose, and MEEF were simulated when forming resist patterns for contact holes with diameters of 1.25 μm to 1.45 μm.

[0120] The σ value of the illumination optical system 101 was set to 0.5, the wavelength λ of the exposure light was set to 365 nm (0.365 μm), and the numerical aperture NA of the projection optical system 104 was set to 0.130.

[0121] Example 4-1 The conditions for Example 4-1 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 1.25 μm Shape of the opening pattern 30 a of the light-shielding film 30: approximately octagonal Length L of one side of the contact hole pattern 20 a: 2.00 μm Rim width W: 1.36 μm

[0122] Example 4-2 The conditions for Example 4-2 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 1.25 μm Shape of the opening pattern 30 a of the light-shielding film 30: approximately octagonal Length L of one side of the contact hole pattern 20 a: 2.00 μm Rim width W: 1.79 μm

[0123] Example 4-3 The conditions for Example 4-3 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 1.25 μm Shape of the opening pattern 30 a of the light-shielding film 30: approximately octagonal Length L of one side of the contact hole pattern 20 a: 2.29 μm Rim width W: 1.36 μm

[0124] Example 4-4 The conditions for Example 4-4 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 1.25 μm Shape of the opening pattern 30 a of the light-shielding film 30: approximately octagonal Length L of one side of the contact hole pattern 20 a: 2.29 μm Rim width W: 1.79 μm

[0125] Example 4-5 The conditions for Example 4-5 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 1.45 μm Shape of the opening pattern 30 a of the light-shielding film 30: approximately octagonal Length L of one side of the contact hole pattern 20 a: 2.00 μm Rim width W: 1.36 μm

[0126] Example 4-6 The conditions for Example 4-6 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 1.45 μm Shape of the opening pattern 30 a of the light-shielding film 30: approximately octagonal Length L of one side of the contact hole pattern 20 a: 2.00 μm Rim width W: 1.79 μm

[0127] Example 4-7 The conditions for Example 4-7 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 1.45 μm Shape of the opening pattern 30 a of the light-shielding film 30: approximately octagonal Length L of one side of the contact hole pattern 20 a: 2.29 μm Rim width W: 1.36 μm

[0128] Example 4-8 The conditions for Example 4-8 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 1.45 μm Shape of the opening pattern 30 a of the light-shielding film 30: approximately octagonal Length L of one side of the contact hole pattern 20 a: 2.29 μm Rim width W: 1.79 μm

[0129] The simulation results are shown in Tables 7 and 8. For comparison, the simulation results of Comparative Example 1 are also shown. In Tables 7 and 8, the target diameter D of the contact hole resist pattern, the side lengths L and Lc of the contact hole pattern, and the rim widths W and Wc are normalized by λ / NA, and the DOF is normalized by λ / NA. ２ The values ​​normalized by and are also shown.

[0130]

[0131] As shown in Tables 7 and 8, in Examples 4-1 to 4-8, the DOF was 14.4 μm (DOF / (λ / NA ２ ): 0.67), and it can be said that a sufficient DOF is ensured. In addition, a film loss of 25% or less is considered to be sufficient for practical use, and the film loss in all of Examples 4-1 to 4-8 was 25% or less.

[0132] Here, when Comparative Example 1 is compared with Examples 4-1 to 4-8, the required dose amounts in Examples 4-1 to 4-8 are smaller than that in Comparative Example 1. Therefore, Simulation 4 confirmed that by using phase shift mask 300A in which length L is set to 2.00 μm to 2.29 μm (0.71 λ / NA to 0.82 λ / NA) and rim width W is set to 1.36 μm to 1.79 μm (0.48 λ / NA to 0.64 λ / NA), it is possible to shorten the takt time when forming a resist pattern for a contact hole having a target diameter D of 1.25 μm to 1.45 μm (0.45 λ / NA to 0.52 λ / NA).

[0133] Furthermore, the MEEF in Examples 4-1 to 4-8 was smaller than that in Comparative Example 1. Therefore, it was confirmed that in Examples 4-1 to 4-8, the production variation of the resist pattern of the contact hole formed on the photosensitive substrate P could be made smaller than that in Comparative Example 1.

[0134] In Simulation 4, the σ value of the illumination optical system 101 was set to 0.5, but the DOF increases as the σ value decreases. Furthermore, for the film loss, required dose, and MEEF, results with similar trends to those of Simulation 4 can be obtained even if the σ value is less than 0.5.

[0135] Next, a case where the target diameter D is smaller will be described. The inventors have discovered that, also for phase shift mask 300A according to the second embodiment, by appropriately setting length L and rim width W in accordance with the σ value of illumination optical system 101, it is possible to form a resist pattern for a contact hole having a smaller target diameter D, for example, a target diameter D of 0.42λ / NA or less, while keeping the resist film loss on photosensitive substrate P, DOF, and takt time within practical ranges.

[0136] Specifically, if the σ value of the illumination optical system 101 of the exposure apparatus 100 is 0.4 or less and the target diameter of the contact hole resist pattern is 0.35λ / NA to 0.42λ / NA, by setting the length L to 0.63λ / NA to 0.73λ / NA and the rim width W to 0.32λ / NA to 0.53λ / NA, it is possible to form a contact hole resist pattern with a diameter of 0.35λ / NA to 0.42λ / NA while keeping the resist film loss, DOF, and takt time within practical ranges.

[0137] In other words, in exposure apparatus 100 equipped with illumination optical system 101 that emits exposure light of wavelength λ and projection optical system 104 with a numerical aperture of NA, when using a phase shift mask 300A whose length L is set to 0.63λ / NA to 0.73λ / NA and whose rim width W is set to 0.32λ / NA to 0.53λ / NA, by setting the σ value of illumination optical system 101 to 0.4 or less, it is possible to form a resist pattern for contact holes with a diameter of 0.35λ / NA to 0.42λ / NA while keeping resist film loss, DOF, and takt time within practical ranges.

[0138] For example, when the wavelength λ of the exposure light is 365 nm and the numerical aperture NA of the projection optical system 104 is 0.130, 0.35λ / NA to 0.42λ / NA is 0.99 μm to 1.17 μm, the length L: 0.63λ / NA to 0.73λ / NA is 1.78 μm to 2.04 μm, and the rim width W: 0.32λ / NA to 0.53λ / NA is 0.90 μm to 1.48 μm.

[0139] Furthermore, when the σ value of the illumination optical system 101 of the exposure apparatus 100 is 0.35 or less and the target diameter of the contact hole resist pattern is 0.31λ / NA to 0.37λ / NA, by setting the length L to 0.60λ / NA to 0.70λ / NA and the rim width W to 0.28λ / NA to 0.45λ / NA, it is possible to form a contact hole resist pattern with a diameter of 0.31λ / NA to 0.37λ / NA while keeping the resist film loss, DOF, and takt time within practical ranges.

[0140] In other words, in exposure apparatus 100 equipped with illumination optical system 101 that emits exposure light of wavelength λ and projection optical system 104 with a numerical aperture of NA, when using a phase shift mask 300A whose length L is set to 0.60λ / NA to 0.70λ / NA and whose rim width W is set to 0.28λ / NA to 0.45λ / NA, by setting the σ value of illumination optical system 101 to 0.35 or less, it is possible to form a resist pattern for contact holes with a diameter of 0.31λ / NA to 0.37λ / NA while keeping resist film loss, DOF, and takt time within practical ranges.

[0141] For example, when the wavelength λ of the exposure light is 365 nm and the numerical aperture NA of the projection optical system 104 is 0.130, 0.31λ / NA to 0.37λ / NA is 0.88 μm to 1.03 μm, the length L: 0.60λ / NA to 0.70λ / NA is 1.69 μm to 1.96 μm, and the rim width W: 0.28λ / NA to 0.45λ / NA is 0.80 μm to 1.25 μm.

[0142] (Simulation 5) Using phase shift masks 300A with different lengths L and rim widths W, resist patterns for contact holes with diameters of 0.99 μm to 1.17 μm were formed, and film loss, DOF, required dose, and MEEF were simulated.

[0143] The σ value of the illumination optical system 101 was set to 0.4, the wavelength λ of the exposure light was set to 365 nm (0.365 μm), and the numerical aperture NA was set to 0.130.

[0144] Example 5-1 The conditions for Example 5-1 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 0.99 μm Shape of the opening pattern 30 a of the light-shielding film 30: approximately octagonal Length L of one side of the contact hole pattern 20 a: 1.78 μm Rim width W: 0.90 μm

[0145] Example 5-2 The conditions for Example 5-2 were as follows: Transmittance of light with a wavelength of 365 nm through phase shift film 20: 35% Target diameter D of contact hole resist pattern: 0.99 μm Shape of opening pattern 30 a of light-shielding film 30: approximately octagonal Length L of one side of contact hole pattern 20 a: 1.78 μm Rim width W: 1.48 μm

[0146] Example 5-3 The conditions for Example 5-3 were as follows: Transmittance of light with a wavelength of 365 nm through phase shift film 20: 35% Target diameter D of contact hole resist pattern: 0.99 μm Shape of opening pattern 30 a of light-shielding film 30: approximately octagonal Length L of one side of contact hole pattern 20 a: 2.04 μm Rim width W: 0.90 μm

[0147] Example 5-4 The conditions for Example 5-4 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 0.99 μm Shape of the opening pattern 30 a of the light-shielding film 30: approximately octagonal Length L of one side of the contact hole pattern 20 a: 2.04 μm Rim width W: 1.48 μm

[0148] Example 5-5 The conditions for Example 5-5 were as follows: Transmittance of light with a wavelength of 365 nm through phase shift film 20: 35% Target diameter D of contact hole resist pattern: 1.17 μm Shape of opening pattern 30 a of light-shielding film 30: approximately octagonal Length L of one side of contact hole pattern 20 a: 1.78 μm Rim width W: 0.90 μm

[0149] Example 5-6 The conditions for Example 5-6 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 1.17 μm Shape of the opening pattern 30 a of the light-shielding film 30: approximately octagonal Length L of one side of the contact hole pattern 20 a: 1.78 μm Rim width W: 1.48 μm

[0150] (Example 5-7) The conditions for Example 5-7 were as follows: Transmittance of light with a wavelength of 365 nm through phase shift film 20: 35% Target diameter D of contact hole resist pattern: 1.17 μm Shape of opening pattern 30 a of light-shielding film 30: approximately octagonal Length L of one side of contact hole pattern 20 a: 2.04 μm Rim width W: 0.90 μm

[0151] (Example 5-8) The conditions for Example 5-8 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 1.17 μm Shape of the opening pattern 30 a of the light-shielding film 30: approximately octagonal Length L of one side of the contact hole pattern 20 a: 2.04 μm Rim width W: 1.48 μm

[0152] The simulation results are shown in Tables 9 and 10. For comparison, the simulation results of Comparative Example 2 are also shown. In Tables 9 and 10, the target diameter D of the contact hole resist pattern, the side lengths L and Lc of the contact hole pattern, and the rim widths W and Wc are normalized by λ / NA, and the DOF is normalized by λ / NA. ２ The values ​​normalized by and are also shown.

[0153]

[0154] In Tables 9 and 10, the DOFs of Examples 5-1 to 5-8 are the same as those of Comparative Example 2 (9.6 μm (DOF / (λ / NA ２ ): 0.45), and it can be said that a sufficient DOF is ensured. In addition, the film loss in Examples 5-1 to 5-8 is 25% or less.

[0155] In Examples 5-1 to 5-8, the required dose was, for example, 86.9 [mJ / cm ２ Therefore, simulation 5 confirmed that by using phase shift mask 300A in which length L is set to 1.78 μm to 2.04 μm (0.63 λ / NA to 0.73 λ / NA) and rim width W is set to 0.90 μm to 1.48 μm (0.32 λ / NA to 0.53 λ / NA), it is possible to shorten the takt time when forming a resist pattern for a contact hole having a target diameter D of 0.99 μm to 1.17 μm (0.35 λ / NA to 0.42 λ / NA).

[0156] Furthermore, the MEEF in Examples 5-2 to 5-8 is smaller than that in Comparative Example 2. Therefore, in Examples 5-2 to 5-8, the production variation of the resist pattern of the contact hole formed in the photosensitive substrate P can be made smaller than that in Comparative Example 2.

[0157] Simulation 5 confirmed that when a phase shift mask 300A having a length L set to 0.63λ / NA to 0.73λ / NA and a rim width W set to 0.32λ / NA to 0.53λ / NA is illuminated with exposure light of wavelength λ by an illumination optical system 101 having a σ value of 0.4 or less, and an image of a first pattern PT1 is projected onto a photosensitive substrate P via a projection optical system 104 having a numerical aperture NA, a resist pattern of a contact hole having a diameter of 0.35λ / NA to 0.42λ / NA can be formed while keeping the resist film loss, DOF, and takt time within practical ranges.

[0158] In Simulation 5, the σ value of the illumination optical system 101 was set to 0.4, but the DOF increases as the σ value decreases. Furthermore, for the film loss, required dose, and MEEF, results with similar trends to those of Simulation 5 can be obtained even if the σ value is less than 0.4.

[0159] (Simulation 6) Using phase shift masks 300A with different lengths L and rim widths W, resist patterns for contact holes with diameters of 0.88 μm to 1.03 μm were formed, and film loss, DOF, required dose, and MEEF were simulated.

[0160] The σ value of the illumination optical system 101 was set to 0.35, the wavelength λ of the exposure light was set to 365 nm (0.365 μm), and the numerical aperture NA was set to 0.130.

[0161] Example 6-1 The conditions for Example 6-1 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 0.88 μm Shape of the opening pattern 30 a of the light-shielding film 30: approximately octagonal Length L of one side of the contact hole pattern 20 a: 1.69 μm Rim width W: 0.80 μm

[0162] Example 6-2 The conditions for Example 6-2 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 0.88 μm Shape of the opening pattern 30 a of the light-shielding film 30: approximately octagonal Length L of one side of the contact hole pattern 20 a: 1.69 μm Rim width W: 1.25 μm

[0163] Example 6-3 The conditions for Example 6-3 were as follows: Transmittance of light with a wavelength of 365 nm through phase shift film 20: 35% Target diameter D of contact hole resist pattern: 0.88 μm Shape of opening pattern 30 a of light-shielding film 30: approximately octagonal Length L of one side of contact hole pattern 20 a: 1.96 μm Rim width W: 0.80 μm

[0164] Example 6-4 The conditions for Example 6-4 were as follows: Transmittance of light with a wavelength of 365 nm through phase shift film 20: 35% Target diameter D of contact hole resist pattern: 0.88 μm Shape of opening pattern 30 a of light-shielding film 30: approximately octagonal Length L of one side of contact hole pattern 20 a: 1.96 μm Rim width W: 1.25 μm

[0165] Example 6-5 The conditions for Example 6-5 were as follows: Transmittance of light with a wavelength of 365 nm through phase shift film 20: 35% Target diameter D of contact hole resist pattern: 1.03 μm Shape of opening pattern 30 a of light-shielding film 30: approximately octagonal Length L of one side of contact hole pattern 20 a: 1.69 μm Rim width W: 0.80 μm

[0166] Example 6-6 The conditions for Example 6-6 were as follows: Transmittance of light with a wavelength of 365 nm through phase shift film 20: 35% Target diameter D of contact hole resist pattern: 1.03 μm Shape of opening pattern 30 a of light-shielding film 30: approximately octagonal Length L of one side of contact hole pattern 20 a: 1.69 μm Rim width W: 1.25 μm

[0167] Examples 6-7 The conditions for Examples 6-7 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 1.03 μm Shape of the opening pattern 30 a of the light-shielding film 30: approximately octagonal Length L of one side of the contact hole pattern 20 a: 1.96 μm Rim width W: 0.80 μm

[0168] Examples 6-8 The conditions for Examples 6-8 were as follows: Transmittance of light with a wavelength of 365 nm through the phase shift film 20: 35% Target diameter D of the resist pattern of the contact hole: 1.03 μm Shape of the opening pattern 30 a of the light-shielding film 30: approximately octagonal Length L of one side of the contact hole pattern 20 a: 1.96 μm Rim width W: 1.25 μm

[0169] The simulation results are shown in Tables 11 and 12. For comparison, the simulation results of Comparative Example 3 are also shown. In Tables 11 and 12, the target diameter D of the contact hole resist pattern, the side lengths L and Lc of the contact hole pattern, and the rim widths W and Wc are normalized by λ / NA, and the DOF is normalized by λ / NA ２ The values ​​normalized by and are also shown.

[0170]

[0171] In Tables 11 and 12, the DOFs of Examples 6-1 to 6-8 are the same as those of Comparative Example 3 (7.4 μm (DOF / (λ / NA ２ ): 0.34)), and it can be said that a sufficient DOF is ensured. In addition, the film loss in Examples 6-1 to 6-8 is 25% or less.

[0172] In Examples 6-1 to 6-8, the required dose was, for example, 98.5 [mJ / cm ２Therefore, simulation 6 confirmed that by using phase shift mask 300A in which length L is set to 1.69 μm to 1.96 μm (0.60 λ / NA to 0.70 λ / NA) and rim width W is set to 0.80 μm to 1.25 μm (0.28 λ / NA to 0.45 λ / NA), the takt time can be shortened when forming a resist pattern for a contact hole with a target diameter D of 0.88 μm to 1.03 μm (0.31 λ / NA to 0.37 λ / NA).

[0173] Simulation 6 confirmed that when a phase shift mask 300A having a length L set to 0.60λ / NA to 0.70λ / NA and a rim width W set to 0.28λ / NA to 0.45λ / NA is illuminated with exposure light of wavelength λ by an illumination optical system 101 having a σ value of 0.35 or less, and an image of a first pattern PT1 is projected onto a photosensitive substrate P via a projection optical system 104 having a numerical aperture NA, a resist pattern of a contact hole having a diameter of 0.31λ / NA to 0.37λ / NA can be formed while keeping the resist film loss, DOF, and takt time within practical ranges.

[0174] In Simulation 6, the σ value of the illumination optical system 101 was set to 0.35, but the DOF increases as the σ value decreases. Furthermore, for the film loss, required dose, and MEEF, results with similar trends to those of Simulation 6 can be obtained even if the σ value is less than 0.35.

[0175] (Modification) In the second embodiment, the octagonal shape of the opening pattern 30a is not limited to the shape shown in FIG. 7. For example, in FIG. 7, the length of the sides of the opening pattern 30a parallel to the sides of the contact hole pattern 20a is approximately equal to the length of the sides of the contact hole pattern 20a. However, as shown in FIG. 8A, the sides of the opening pattern 30a parallel to the sides of the contact hole pattern 20a may be longer than the sides of the contact hole pattern 20a. Furthermore, as shown in FIG. 8B, the sides other than the sides parallel to the sides of the contact hole pattern 20a may be curved (arcuate) rather than straight. Furthermore, the shape of the opening pattern 30a is not limited to a rectangle or an octagon, and may be, for example, a decagon as shown in FIG. 9.

[0176] (Simulation 7) The shape of the opening pattern 30a was changed to simulate the film loss, DOF, required dose, and MEEF when forming a resist pattern for a contact hole with a diameter of 1.40 μm.

[0177] The σ value of the illumination optical system 101 was set to 0.5, the wavelength λ of the exposure light was set to 365 nm (0.365 μm), and the numerical aperture NA of the projection optical system 104 was set to 0.130.

[0178] Example 7-1 The conditions for Example 7-1 were as follows: Transmittance of light with a wavelength of 365 nm through phase shift film 20: 35% Target diameter D of contact hole resist pattern: 1.35 μm Shape of opening pattern 30 a of light-shielding film 30: octagonal as shown in FIG. 7 Length L of one side of contact hole pattern 20 a: 2.15 μm Rim width W: 1.55 μm

[0179] Example 7-2 The conditions for Example 7-2 were as follows: Transmittance of light with a wavelength of 365 nm through phase shift film 20: 35% Target diameter D of contact hole resist pattern: 1.35 μm Shape of opening pattern 30 a in light-shielding film 30: octagonal as shown in FIG. 8A Length L of one side of contact hole pattern 20 a: 2.15 μm Rim width W: 1.55 μm

[0180] Example 7-3 The conditions for Example 7-3 were as follows: Transmittance of light with a wavelength of 365 nm through phase shift film 20: 35% Target diameter D of contact hole resist pattern: 1.35 μm Shape of opening pattern 30 a in light-shielding film 30: octagonal as shown in FIG. 8B Length L of one side of contact hole pattern 20 a: 2.15 μm Rim width W: 1.55 μm

[0181] Example 7-4 The conditions for Example 7-4 were as follows: Transmittance of light with a wavelength of 365 nm through phase shift film 20: 35% Target diameter D of contact hole resist pattern: 1.35 μm Shape of opening pattern 30 a of light-shielding film 30: decagon shown in FIG. 9 Length L of one side of contact hole pattern 20 a: 2.15 μm Rim width W: 1.55 μm

[0182] The simulation results are shown in Table 13. In Table 13, the target diameter D of the contact hole resist pattern, the length L of one side of the contact hole pattern, and the rim width W are normalized by λ / NA, and the DOF is normalized by λ / NA ２ The values ​​normalized by and are also shown.

[0183]

[0184] As shown in Table 13, the target diameter D (1.35 μm) of the contact hole resist pattern in Example 7-1, the side length L (2.15 μm) of the contact hole pattern 20a, and the rim width W (1.55 μm) are each within the range of values ​​confirmed in Simulation 4 to be able to shorten the takt time when forming the contact hole resist pattern. In all of Examples 7-2 to 7-4, the DOF, film loss, required dose, and MEEF are comparable to those of Example 7-1. The results of Simulation 7 confirmed that changing the side length or side shape (straight line, curved line) of the opening pattern 30a has almost no effect on the DOF, film loss, required dose, and MEEF, and that the takt time can be shortened. It was also confirmed that changing the shape of the opening pattern 30a to a decagonal shape can also shorten the takt time.

[0185] In the first and second embodiments, the phase shift film 20 is formed on the mask substrate 10, and the light-shielding film 30 is formed on the phase shift film 20, but the present invention is not limited to this. For example, the light-shielding film 30 may be formed on the mask substrate 10, and the phase shift film 20 may be formed on the light-shielding film 30. Furthermore, in the first and second embodiments, the phase shift film 20 and the light-shielding film 30 are stacked on the mask substrate 10, but the phase shift film 20 and the light-shielding film 30 may not be stacked, and the phase shift film 20 may be formed only inside the opening pattern 30 a of the light-shielding film 30, for example.

[0186] The above-described embodiment is a preferred example of the present invention, but the present invention is not limited to this and can be modified in various ways without departing from the spirit of the present invention.

[0187] REFERENCE SIGNS LIST 10 mask substrate 20 phase shift film 20a contact hole pattern 30 light-shielding film 30a opening pattern 100 exposure apparatus 101 illumination optical system 104 projection optical system 300, 300A phase shift mask P photosensitive substrate

Claims

1. A mask substrate that transmits exposure light of wavelength λ, The phase-shift film formed on the mask substrate has a first pattern including a substantially square contact hole pattern, and the transmittance of the exposure light is 30% to 40%. A light-shielding film having a second pattern formed on the phase-shift film, including an opening pattern that exposes the phase-shift film at the periphery of the contact hole pattern, Equipped with, When the image of the first pattern is projected onto the exposed member by the exposure light via a projection optical system having a numerical aperture NA, and the target diameter of the formed pattern corresponding to the contact hole pattern is 0.45λ / NA to 0.52λ / NA, The length of one side of the aforementioned contact hole pattern is 0.71λ / NA to 0.82λ / NA. The shape of the aperture pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to that side is 0.48λ / NA to 0.64λ / NA. mask.

2. A mask substrate that transmits exposure light of wavelength λ, The phase-shift film formed on the mask substrate has a first pattern including a substantially square contact hole pattern, and the transmittance of the exposure light is 30% to 40%. A light-shielding film having a second pattern formed on the phase-shift film, including an opening pattern that exposes the phase-shift film at the periphery of the contact hole pattern, Equipped with, The length of one side of the aforementioned contact hole pattern is 0.71λ / NA to 0.82λ / NA. The shape of the aperture pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to that side is 0.48λ / NA to 0.64λ / NA. NA represents the numerical aperture of the projection optical system that projects the first pattern image onto the exposed member using the exposure light. mask.

3. A mask substrate that transmits exposure light, The phase-shift film formed on the mask substrate has a first pattern including a substantially square contact hole pattern, and the transmittance of the exposure light is 30% to 40%. A light-shielding film having a second pattern formed on the phase-shift film, including an opening pattern that exposes the phase-shift film at the periphery of the contact hole pattern, Equipped with, When the image of the first pattern is projected onto the exposed member by the exposure light via the projection optical system, and the target diameter of the formed pattern corresponding to the contact hole pattern is 1.25 μm to 1.45 μm, The length of one side of the aforementioned contact hole pattern is 2.00 μm to 2.29 μm. The shape of the aperture pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to that side is 1.36 μm to 1.79 μm. mask.

4. A mask substrate that transmits exposure light, The phase-shift film formed on the mask substrate has a first pattern including a substantially square contact hole pattern, and the transmittance of the exposure light is 30% to 40%. A light-shielding film having a second pattern formed on the phase-shift film, including an opening pattern that exposes the phase-shift film at the periphery of the contact hole pattern, Equipped with, The length of one side of the aforementioned contact hole pattern is 2.00 μm to 2.29 μm. The shape of the aperture pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to that side is 1.36 μm to 1.79 μm. mask.

5. The mask is illuminated by the exposure light from an illumination optical system with a σ value of 0.5 or less. The mask according to any one of claims 1 to 4.

6. A mask substrate that transmits exposure light of wavelength λ, The phase-shift film formed on the mask substrate has a first pattern including a substantially square contact hole pattern, and the transmittance of the exposure light is 30% to 40%. A light-shielding film having a second pattern formed on the phase-shift film, including an opening pattern that exposes the phase-shift film at the periphery of the contact hole pattern, Equipped with, When the image of the first pattern is projected onto the exposed member by the exposure light via a projection optical system having a numerical aperture NA, and the target diameter of the formed pattern corresponding to the contact hole pattern is 0.35λ / NA to 0.42λ / NA, The length of one side of the aforementioned contact hole pattern is 0.63λ / NA to 0.73λ / NA. The shape of the aperture pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to that side is 0.32λ / NA to 0.53λ / NA. mask.

7. A mask substrate that transmits exposure light of wavelength λ, The phase-shift film formed on the mask substrate has a first pattern including a substantially square contact hole pattern, and the transmittance of the exposure light is 30% to 40%. A light-shielding film having a second pattern formed on the phase-shift film, including an opening pattern that exposes the phase-shift film at the periphery of the contact hole pattern, Equipped with, The length of one side of the aforementioned contact hole pattern is 0.63λ / NA to 0.73λ / NA. The shape of the aperture pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to that side is 0.32λ / NA to 0.53λ / NA. NA represents the numerical aperture of the projection optical system that projects the first pattern image onto the exposed member using the exposure light. mask.

8. A mask substrate that transmits exposure light, The phase-shift film formed on the mask substrate has a first pattern including a substantially square contact hole pattern, and the transmittance of the exposure light is 30% to 40%. A light-shielding film having a second pattern formed on the phase-shift film, including an opening pattern that exposes the phase-shift film at the periphery of the contact hole pattern, Equipped with, When the image of the first pattern is projected onto the exposed member by the exposure light via the projection optical system, and the target diameter of the formed pattern corresponding to the contact hole pattern is 0.99 μm to 1.17 μm, The length of one side of the aforementioned contact hole pattern is 1.78 μm to 2.04 μm. The shape of the aperture pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to that side is 0.90 μm to 1.48 μm. mask.

9. A mask substrate that transmits exposure light, The phase-shift film formed on the mask substrate has a first pattern including a substantially square contact hole pattern, and the transmittance of the exposure light is 30% to 40%. A light-shielding film having a second pattern formed on the phase-shift film, including an opening pattern that exposes the phase-shift film at the periphery of the contact hole pattern, Equipped with, The length of one side of the aforementioned contact hole pattern is 1.78 μm to 2.04 μm. The shape of the aperture pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to that side is 0.90 μm to 1.48 μm. mask.

10. The mask is illuminated by the exposure light from an illumination optical system with a σ value of 0.4 or less. The mask according to any one of claims 6 to 9.

11. A mask substrate that transmits exposure light of wavelength λ, The phase-shift film formed on the mask substrate has a first pattern including a substantially square contact hole pattern, and the transmittance of the exposure light is 30% to 40%. A light-shielding film having a second pattern formed on the phase-shift film, including an opening pattern that exposes the phase-shift film at the periphery of the contact hole pattern, Equipped with, When the image of the first pattern is projected onto the exposed member by the exposure light via a projection optical system having a numerical aperture NA, and the target diameter of the formed pattern corresponding to the contact hole pattern is 0.31λ / NA to 0.37λ / NA, The length of one side of the aforementioned contact hole pattern is 0.60λ / NA to 0.70λ / NA. The shape of the aperture pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to that side is 0.28λ / NA to 0.45λ / NA. mask.

12. A mask substrate that transmits exposure light of wavelength λ, The phase-shift film formed on the mask substrate has a first pattern including a substantially square contact hole pattern, and the transmittance of the exposure light is 30% to 40%. A light-shielding film having a second pattern formed on the phase-shift film, including an opening pattern that exposes the phase-shift film at the periphery of the contact hole pattern, Equipped with, The length of one side of the aforementioned contact hole pattern is 0.60λ / NA to 0.70λ / NA. The shape of the aperture pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to that side is 0.28λ / NA to 0.45λ / NA. NA represents the numerical aperture of the projection optical system that projects the first pattern image onto the exposed member using the exposure light. mask.

13. A mask substrate that transmits exposure light, The phase-shift film formed on the mask substrate has a first pattern including a substantially square contact hole pattern, and the transmittance of the exposure light is 30% to 40%. A light-shielding film having a second pattern formed on the phase-shift film, including an opening pattern that exposes the phase-shift film at the periphery of the contact hole pattern, Equipped with, When the image of the first pattern is projected onto the exposed member by the exposure light via the projection optical system, and the target diameter of the formed pattern corresponding to the contact hole pattern is 0.88 μm to 1.03 μm, The length of one side of the aforementioned contact hole pattern is 1.69 μm to 1.96 μm. The shape of the aperture pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to that side is 0.80 μm to 1.25 μm. mask.

14. A mask substrate that transmits exposure light, The phase-shift film formed on the mask substrate has a first pattern including a substantially square contact hole pattern, and the transmittance of the exposure light is 30% to 40%. A light-shielding film having a second pattern formed on the phase-shift film, including an opening pattern that exposes the phase-shift film at the periphery of the contact hole pattern, Equipped with, The length of one side of the aforementioned contact hole pattern is 1.69 μm to 1.96 μm. The shape of the aperture pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to that side is 0.80 μm to 1.25 μm. mask.

15. The mask is illuminated by the exposure light from an illumination optical system with a σ value of 0.35 or less. The mask according to any one of claims 11 to 14.

16. The corners of the aforementioned roughly square are chamfered or rounded. A mask according to any one of claims 1 to 4, 6 to 9, and 11 to 14.

17. The corners of the aforementioned polygon are chamfered or rounded. A mask according to any one of claims 1 to 4, 6 to 9, and 11 to 14.

18. The aforementioned polygon is an octagon. A mask according to any one of claims 1 to 4, 6 to 9, and 11 to 14.

19. A mask substrate that transmits exposure light of wavelength λ, The phase-shift film formed on the mask substrate has a first pattern including a substantially square contact hole pattern, and the transmittance of the exposure light is 30% to 40%. A light-shielding film having a second pattern formed on the phase-shift film, including an opening pattern that exposes the phase-shift film at the periphery of the contact hole pattern, Equipped with, When the image of the first pattern is projected onto the exposed member by the exposure light via a projection optical system having a numerical aperture NA, and the target diameter of the formed pattern corresponding to the contact hole pattern is 0.45λ / NA to 0.52λ / NA, The length of one side of the aforementioned contact hole pattern is 0.74λ / NA to 0.78λ / NA. The shape of the aperture pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to that side is 0.39λ / NA to 0.52λ / NA. mask.

20. A mask substrate that transmits exposure light of wavelength λ, The phase-shift film formed on the mask substrate has a first pattern including a substantially square contact hole pattern, and the transmittance of the exposure light is 30% to 40%. A light-shielding film having a second pattern formed on the phase-shift film, including an opening pattern that exposes the phase-shift film at the periphery of the contact hole pattern, Equipped with, The length of one side of the aforementioned contact hole pattern is 0.74λ / NA to 0.78λ / NA. The shape of the aperture pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to that side is 0.39λ / NA to 0.52λ / NA. NA represents the numerical aperture of the projection optical system that projects the first pattern image onto the exposed member using the exposure light. mask.

21. A mask substrate that transmits exposure light, The phase-shift film formed on the mask substrate has a first pattern including a substantially square contact hole pattern, and the transmittance of the exposure light is 30% to 40%. A light-shielding film having a second pattern formed on the phase-shift film, including an opening pattern that exposes the phase-shift film at the periphery of the contact hole pattern, Equipped with, When the image of the first pattern is projected onto the exposed member by the exposure light via the projection optical system, and the target diameter of the formed pattern corresponding to the contact hole pattern is 1.27 μm to 1.45 μm, The length of one side of the aforementioned contact hole pattern is 2.09 μm to 2.20 μm. The shape of the aperture pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to that side is 1.10 μm to 1.47 μm. mask.

22. A mask substrate that transmits exposure light, The phase-shift film formed on the mask substrate has a first pattern including a substantially square contact hole pattern, and the transmittance of the exposure light is 30% to 40%. A light-shielding film having a second pattern formed on the phase-shift film, including an opening pattern that exposes the phase-shift film at the periphery of the contact hole pattern, Equipped with, The length of one side of the aforementioned contact hole pattern is 2.09 μm to 2.20 μm. The shape of the aperture pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to that side is 1.10 μm to 1.47 μm. mask.

23. The mask is illuminated by the exposure light from an illumination optical system with a σ value of 0.5 or less. The mask according to any one of claims 19 to 22.

24. A mask substrate that transmits exposure light of wavelength λ, The phase-shift film formed on the mask substrate has a first pattern including a substantially square contact hole pattern, and the transmittance of the exposure light is 30% to 40%. A light-shielding film having a second pattern formed on the phase-shift film, including an opening pattern that exposes the phase-shift film at the periphery of the contact hole pattern, Equipped with, When the image of the first pattern is projected onto the exposed member by the exposure light via a projection optical system having a numerical aperture NA, and the target diameter of the formed pattern corresponding to the contact hole pattern is 0.36λ / NA to 0.42λ / NA, The length of one side of the aforementioned contact hole pattern is 0.61λ / NA to 0.67λ / NA. The shape of the aperture pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to that side is 0.23λ / NA to 0.35λ / NA. mask.

25. A mask substrate that transmits exposure light of wavelength λ, The phase-shift film formed on the mask substrate has a first pattern including a substantially square contact hole pattern, and the transmittance of the exposure light is 30% to 40%. A light-shielding film having a second pattern formed on the phase-shift film, including an opening pattern that exposes the phase-shift film at the periphery of the contact hole pattern, Equipped with, The length of one side of the aforementioned contact hole pattern is 0.61λ / NA to 0.67λ / NA. The shape of the aperture pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to that side is 0.23λ / NA to 0.35λ / NA. NA represents the numerical aperture of the projection optical system that projects the first pattern image onto the exposed member using the exposure light. mask.

26. A mask substrate that transmits exposure light, The phase-shift film formed on the mask substrate has a first pattern including a substantially square contact hole pattern, and the transmittance of the exposure light is 30% to 40%. A light-shielding film having a second pattern formed on the phase-shift film, including an opening pattern that exposes the phase-shift film at the periphery of the contact hole pattern, Equipped with, When the image of the first pattern is projected onto the exposed member by the exposure light via the projection optical system, and the target diameter of the formed pattern corresponding to the contact hole pattern is 1.02 μm to 1.17 μm, The length of one side of the aforementioned contact hole pattern is 1.72 μm to 1.87 μm. The shape of the aperture pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to that side is 0.65 μm to 0.98 μm. mask.

27. A mask substrate that transmits exposure light, The phase-shift film formed on the mask substrate has a first pattern including a substantially square contact hole pattern, and the transmittance of the exposure light is 30% to 40%. A light-shielding film having a second pattern formed on the phase-shift film, including an opening pattern that exposes the phase-shift film at the periphery of the contact hole pattern, Equipped with, The length of one side of the aforementioned contact hole pattern is 1.72 μm to 1.87 μm. The shape of the aperture pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to that side is 0.65 μm to 0.98 μm. mask.

28. The mask is illuminated by the exposure light from an illumination optical system with a σ value of 0.4 or less. The mask according to any one of claims 24 to 27.

29. A mask substrate that transmits exposure light of wavelength λ, The phase-shift film formed on the mask substrate has a first pattern including a substantially square contact hole pattern, and the transmittance of the exposure light is 30% to 40%. A light-shielding film having a second pattern formed on the phase-shift film, including an opening pattern that exposes the phase-shift film at the periphery of the contact hole pattern, Equipped with, When the image of the first pattern is projected onto the exposed member by the exposure light via a projection optical system having a numerical aperture NA, and the target diameter of the formed pattern corresponding to the contact hole pattern is 0.32λ / NA to 0.37λ / NA, The length of one side of the aforementioned contact hole pattern is 0.59λ / NA to 0.63λ / NA. The shape of the aperture pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to that side is 0.24λ / NA to 0.33λ / NA. mask.

30. A mask substrate that transmits exposure light of wavelength λ, The phase-shift film formed on the mask substrate has a first pattern including a substantially square contact hole pattern, and the transmittance of the exposure light is 30% to 40%. A light-shielding film having a second pattern formed on the phase-shift film, including an opening pattern that exposes the phase-shift film at the periphery of the contact hole pattern, Equipped with, The length of one side of the aforementioned contact hole pattern is 0.59λ / NA to 0.63λ / NA. The shape of the aperture pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to that side is 0.24λ / NA to 0.33λ / NA. NA represents the numerical aperture of the projection optical system that projects the first pattern image onto the exposed member using the exposure light. mask.

31. A mask substrate that transmits exposure light, The phase-shift film formed on the mask substrate has a first pattern including a substantially square contact hole pattern, and the transmittance of the exposure light is 30% to 40%. A light-shielding film having a second pattern formed on the phase-shift film, including an opening pattern that exposes the phase-shift film at the periphery of the contact hole pattern, Equipped with, When the image of the first pattern is projected onto the exposed member by the exposure light via the projection optical system, and the target diameter of the formed pattern corresponding to the contact hole pattern is 0.90 μm to 1.03 μm, The length of one side of the aforementioned contact hole pattern is 1.67 μm to 1.76 μm. The shape of the aperture pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to that side is 0.68 μm to 0.92 μm. mask.

32. A mask substrate that transmits exposure light, The phase-shift film formed on the mask substrate has a first pattern including a substantially square contact hole pattern, and the transmittance of the exposure light is 30% to 40%. A light-shielding film having a second pattern formed on the phase-shift film, including an opening pattern that exposes the phase-shift film at the periphery of the contact hole pattern, Equipped with, The length of one side of the aforementioned contact hole pattern is 1.67 μm to 1.76 μm. The shape of the aperture pattern of the light-shielding film is a polygon having sides substantially parallel to each side of the contact hole pattern, and the distance between one side of the contact hole pattern and one side of the polygon parallel to that side is 0.68 μm to 0.92 μm. mask.

33. The mask is illuminated by the exposure light from an illumination optical system with a σ value of 0.35 or less. The mask according to any one of claims 29 to 32.

34. The corners of the aforementioned roughly square are chamfered or rounded. A mask according to any one of claims 19 to 22, 24 to 27, and 29 to 32.

35. The corners of the aforementioned polygon are chamfered or rounded. A mask according to any one of claims 19 to 22, 24 to 27, and 29 to 32.

36. The aforementioned polygon is a square. A mask according to any one of claims 19 to 22, 24 to 27, and 29 to 32.

37. A mask substrate that transmits exposure light, A phase-shift film formed on the mask substrate having a first pattern including a roughly square contact hole pattern, A light-shielding film having a second pattern including an opening pattern that exposes the phase-shift film at the periphery of the contact hole pattern, The length of one side of the aforementioned contact hole pattern is 2.00 μm to 2.29 μm. The aperture pattern of the light-shielding film has an edge substantially parallel to at least one edge of the contact hole pattern, and the distance between one edge of the contact hole pattern and the edge parallel to that edge is 1.36 μm to 1.79 μm. mask.

38. A mask substrate that transmits exposure light, A phase-shift film formed on the mask substrate having a first pattern including a roughly square contact hole pattern, A light-shielding film having a second pattern including an opening pattern that exposes the phase-shift film at the periphery of the contact hole pattern, The length of one side of the aforementioned contact hole pattern is 2.09 μm to 2.20 μm. The aperture pattern of the light-shielding film has an edge substantially parallel to at least one edge of the contact hole pattern, and the distance between one edge of the contact hole pattern and the edge parallel to that edge is 1.10 μm to 1.47 μm. mask.

39. A mask substrate that transmits exposure light, A phase-shift film formed on the mask substrate having a first pattern including a first opening as a contact hole, A light-shielding film formed on the mask substrate has a second pattern including a second opening that defines the outer edge of the phase-shift film formed around the first opening, Equipped with, The first portion of the inner edge of the phase-shift film defined by the first opening and the second portion of the outer edge of the phase-shift film defined by the second opening are substantially parallel to each other and extend in a first direction, and the width of the phase-shift film between the first portion and the second portion in a second direction intersecting the first direction is 1.36 μm to 1.79 μm. The size of the first opening in at least one of the first and second directions is 2.00 μm to 2.29 μm. mask.

40. A mask substrate that transmits exposure light, A phase-shift film formed on the mask substrate having a first pattern including a first opening as a contact hole, A light-shielding film formed on the mask substrate has a second pattern including a second opening that defines the outer edge of the phase-shift film formed around the first opening, The first portion of the inner edge of the phase-shift film defined by the first opening and the second portion of the outer edge of the phase-shift film defined by the second opening are substantially parallel to each other and extend in a first direction, and the width of the phase-shift film between the first portion and the second portion in a second direction intersecting the first direction is 1.10 μm to 1.47 μm. The size of the first opening in at least one of the first and second directions is 2.09 μm to 2.20 μm. mask.

41. Illuminating the mask according to any one of claims 1 to 4, 6 to 9, 11 to 14, 19 to 22, 24 to 27, and 29 to 32 with exposure light of wavelength λ, An image corresponding to the first pattern is formed on the exposure member via a projection optical system having a numerical aperture NA, An exposure method including [details omitted].