Power Conversion Equipment

Abstract

The semiconductor modules (M) are arranged on the first surface of the substrate (30) in an aligned manner along a first direction perpendicular to the vertical direction of the power converter. Each capacitor (40) has a tubular portion (44) and electrode terminals (42P, 42N) arranged at a first end in the extending direction of the tubular portion (44). At least one first capacitor (40_1) is arranged on the second surface of the substrate (30) such that the extending direction of the tubular portion (44) is a second direction perpendicular to the vertical direction and the first direction. At least one second capacitor (40_2) is arranged on the second surface of the substrate (30) such that the extending direction of the tubular portion (44) is the second direction and the electrode terminals (42P, 42N) are located on the opposite side in the second direction to the electrode terminals (42P, 42N) of the at least one first capacitor (40_1). In a plan view seen from the first direction, at least one first condenser (40_1) and at least one second condenser (40_2) are arranged such that portions of their respective cylindrical portions (44) overlap with each other in the vertical direction and the second direction.

Description

[Technical field]

[0001] The present disclosure relates to a power conversion device. [Background technology]

[0002] JP 2016-139702 A (Patent Document 1) discloses a capacitor mounting structure in a power conversion device. The power conversion device has a plurality of capacitors connected in parallel, a first conductive plate and a second conductive plate to which the electrodes of the capacitors are connected, and a semiconductor module connected to the first conductive plate or the second conductive plate. The first conductive plate and the second conductive plate are stacked with an insulating plate interposed between them to form a laminate.

[0003] The first conductive plate and the second conductive plate have connection portions to which the semiconductor module is connected. The capacitors are provided alternately on one surface and the other surface of the laminate. The capacitors provided adjacent to each other on the first conductive plate side and the second conductive plate side across the laminate are arranged such that a pair of electrodes face each other in the direction in which the capacitors are adjacent to each other. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2016-139702 A Summary of the Invention [Problem to be solved by the invention]

[0005] According to the above-mentioned capacitor mounting structure, it is possible to reduce the difference between the distance between the capacitor provided on the first conductive plate and the semiconductor module and the distance between the capacitor provided on the second conductive plate and the semiconductor module, thereby preventing imbalance in current sharing among the capacitors.

[0006] However, since the capacitor on the first conductive plate side and the capacitor on the second conductive plate side are arranged side by side along the horizontal direction, the horizontal length of the power conversion device becomes longer, which raises concerns about increasing the area occupied by the power conversion device.

[0007] Therefore, a primary object of the present disclosure is to provide a power conversion device that can reduce the variation in the distance between a plurality of capacitors and a semiconductor module without increasing the area occupied by the power conversion device. [Means for solving the problem]

[0008] A power conversion device according to an embodiment of the present disclosure includes a plurality of capacitors, a plurality of semiconductor modules, and a substrate. The plurality of capacitors are electrically connected in parallel. The plurality of semiconductor modules are electrically connected to the plurality of capacitors. The substrate has a first surface on which the plurality of semiconductor modules are mounted, and a second surface opposite to the first surface. The plurality of semiconductor modules are arranged on the first surface of the substrate in an aligned manner along a first direction perpendicular to the vertical direction of the power conversion device. Each of the plurality of capacitors has a cylindrical portion and first and second electrode terminals arranged at a first end in the extension direction of the cylindrical portion. The plurality of capacitors include at least one first capacitor and at least one second capacitor. The at least one first capacitor is arranged on the second surface side of the substrate such that the extension direction of the cylindrical portion is a second direction perpendicular to the vertical direction and the first direction. The at least one second capacitor is disposed on the second surface side of the substrate such that the extending direction of the cylindrical portion is the second direction and the first and second electrode terminals are located on the opposite side in the second direction to the first and second electrode terminals of the at least one first capacitor. In a plan view seen from the first direction, the at least one first capacitor and the at least one second capacitor are disposed such that a portion of each cylindrical portion overlaps in the vertical direction and the second direction. Effect of the Invention

[0009] According to the present disclosure, it is possible to provide a power conversion device that can reduce the variation in the distance between a plurality of capacitors and a semiconductor module without increasing the area occupied by the power conversion device. [Brief description of the drawings]

[0010] [Figure 1] 1 is a block diagram showing a circuit configuration of a power conversion device according to an embodiment. [Diagram 2] FIG. 2 is a diagram illustrating a schematic diagram of a connection relationship between a power conversion device and a capacitor circuit. [Diagram 3] 1 is an external perspective view of a power conversion device according to an embodiment of the present invention; [Figure 4] FIG. 2 is an exploded perspective view of the power conversion device. [Diagram 5] FIG. 2 is a front view of the power conversion device. [Figure 6] FIG. 2 is a top view of the power conversion device. [Figure 7] 7 is a side view of the power conversion device as viewed in the direction of arrow VII shown in FIG. 6. [Figure 8] 8 is a side view of the power conversion device as viewed in the direction of arrow VIII shown in FIG. 6. [Figure 9] FIG. 1 is an external perspective view of a power conversion device according to a comparative example. [Figure 10] FIG. 1 is an external perspective view of a power conversion device according to a comparative example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In the following, the same or corresponding parts in the drawings are denoted by the same reference numerals, and their description will not be repeated in principle.

[0012] <Circuit configuration of power conversion device> Fig. 1 is a block diagram showing a circuit configuration of a power conversion device according to an embodiment of the present disclosure. Fig. 1 shows a configuration example of a converter using a power conversion device 100. The converter receives an R-phase voltage VR from an AC power supply (not shown) via an R-phase line RL. The converter is configured to convert the R-phase voltage VR into a DC voltage and output the DC voltage between DC buses PL1 and NL1.

[0013] As shown in FIG. 1, power conversion device 100 includes AC terminals AC1 and AC2, positive DC terminals BP1 and BP2, and negative DC terminals BN1 and BN2.

[0014] AC terminals AC1 and AC2 receive AC power. In the converter example, AC terminal AC2 is connected to the R-phase line and receives the R-phase voltage VR from the AC power supply. Although not shown, in the inverter example, AC terminal AC1 is connected to the U-phase line and outputs the U-phase voltage VU.

[0015] The positive DC terminals BP1 and BP2 are connected to the DC positive bus PL1. The negative DC terminals BN1 and BN2 are connected to the DC negative bus NL1. In the example of the converter, the positive DC terminal BP1 is connected to the DC positive bus PL1, and the negative DC terminal BN1 is connected to the DC negative bus NL1. In the example of the inverter, the positive DC terminal BP2 is connected to the DC positive bus PL1, and the negative DC terminal BN2 is connected to the DC negative bus NL1.

[0016] The power conversion device 100 includes DC lines 10 and 12, an AC line 14, a plurality of semiconductor modules M1 to M6, and a capacitor circuit 16.

[0017] The DC line 10 is connected between the positive DC terminal BP1 and the positive DC terminal BP2. The DC line 12 is connected between the negative DC terminal BN1 and the negative DC terminal BN2. The AC line 14 is connected between the AC terminal AC1 and the AC terminal AC2.

[0018] The multiple semiconductor modules M1 to M6 are connected in parallel to one another between the DC line 10 and the DC line 12. Hereinafter, the semiconductor modules M1 to M6 may be collectively referred to as a semiconductor module M. Note that the number of semiconductor modules M is not limited to six, and can be changed to any number including one.

[0019] The semiconductor module M has semiconductor switching elements Q1, Q2, diodes D1, D2, a collector terminal C1, an emitter terminal E2, a collector-emitter terminal C2E1, and control terminals G1, G2, E1, E2. Each of the semiconductor switching elements Q1, Q2 is, for example, an IGBT (Insulated Gate Bipolar Transistor). The collector of the IGBT Q1 is connected to the collector terminal C1, and its emitter is connected to the collector, control terminal E1, and collector-emitter terminal C2E1 of the IGBT Q2. The gate of the IGBT Q1 is connected to the control terminal G1. The emitter of the IGBT Q2 is connected to the emitter terminal E2 and the control terminal E2, and its gate is connected to the control terminal G2. The diodes D1, D2 are connected in anti-parallel to the IGBT Q1, Q2, respectively.

[0020] The collector terminal C1 of the semiconductor module M is connected to a DC line 10, and the emitter terminal E2 is connected to a DC line 12. The collector-emitter terminal C2E1 of the semiconductor module M is connected to an AC line 14. The collector terminal C1 corresponds to an embodiment of a "first main electrode terminal", and the emitter terminal E2 corresponds to an embodiment of a "second main electrode terminal".

[0021] The positive terminal of the capacitor circuit 16 is connected to the DC line 10, and the negative terminal is connected to the DC line 12. The capacitor circuit 16 has a plurality of capacitors 40 connected in parallel, as will be described later.

[0022] Fig. 2 is a diagram showing a schematic diagram of a connection relationship between the power conversion device 100 and the capacitor circuit 16. As shown in Fig. 2, the control terminals G1, G2, E1, and E2 of each semiconductor module M are connected to the control device 5. The collector terminal C1 of each semiconductor module M is connected to the DC line 10, the emitter terminal E2 is connected to the DC line 12, and the collector-emitter terminal C2E1 is connected to the AC line 14.

[0023] A plurality of capacitors 40 constituting a capacitor circuit 16 are connected in parallel between the DC line 10 and the DC line 12. The positive terminal of each capacitor 40 is connected to the DC line 10, and the negative terminal is connected to the DC line 12. The number of capacitors 40 can be changed arbitrarily.

[0024] The positive DC terminals BP1, BP2 are drawn out from a DC line 10 to the outside of the power conversion apparatus 100. The negative DC terminals BN1, BN2 are drawn out from a DC line 12 to the outside of the power conversion apparatus 100. The AC terminals AC1, AC2 are drawn out from an AC line 14 to the outside of the power conversion apparatus 100.

[0025] <Power conversion device mounting structure> Next, a mounting structure of a power converter according to the present embodiment will be described. First, a mounting structure of a power converter that is a comparative example of the present embodiment and its problems will be described.

[0026] (Comparative Example) 9 and 10 are external perspective views of a power converter according to a comparative example. As shown in Fig. 9, the power converter 200 according to the comparative example has a rectangular parallelepiped shape. The power converter 200 is configured by connecting a plurality of semiconductor modules M and a plurality of capacitors 40 to a laminate 210.

[0027] The laminate 210 has a rectangular plate shape. The laminate 210 is configured by alternately stacking a plurality of insulating plates on a plurality of conductive plates. Specifically, the laminate 210 has a first conductive plate on which a DC line 10 is formed, a second conductive plate on which a DC line 12 is formed, a third conductive plate on which an AC line 14 is formed, and four insulating plates. These are stacked vertically from the bottom in the order of an insulating plate, a second conductive plate, an insulating plate, a first conductive plate, an insulating plate, a third conductive plate, and an insulating plate.

[0028] A plurality of through holes 212 penetrating in the thickness direction are formed at predetermined positions of the laminate 210. Connection bolts are inserted into the plurality of through holes 212. The connection bolts allow the AC line 14, the DC line 10, and the DC line 12 to be electrically connected to the plurality of semiconductor modules M and the plurality of capacitors 40 at predetermined positions.

[0029] Fig. 10 shows the power converter 200 shown in Fig. 9 without the stack 210. As shown in Fig. 10, a plurality of semiconductor modules M and a plurality of capacitors 40 are housed inside a housing 215 having a rectangular parallelepiped shape.

[0030] The multiple capacitors 40 constitute the capacitor circuit 16 shown in Figures 1 and 2. The multiple capacitors 40 are arranged side by side so as to stand on the bottom surface of the housing 215. For example, the multiple capacitors 40 are arranged in a staggered pattern. That is, the multiple capacitors 40 are arranged at equal intervals in two rows in the longitudinal direction of the substrate 230, and are arranged alternately between the opposing rows.

[0031] Capacitor 40 has a cylindrical portion 44, and a positive electrode terminal 42P and a negative electrode terminal 42N provided at a first end in the extension direction of cylindrical portion 44. Positive electrode terminal 42P and negative electrode terminal 42N correspond to an embodiment of a "first electrode terminal" and a "second electrode terminal", respectively. Capacitor 40 is mounted on laminate 210 by electrically connecting positive electrode terminal 42P and negative electrode terminal 42N to laminate 210 with connecting bolts.

[0032] The substrate 230 is attached to the top of the housing 215 in parallel with the bottom surface of the housing 215. The substrate 230 has a rectangular plate shape. The semiconductor modules M are arranged in a line in the length direction on the surface of the substrate 230. The semiconductor module M has a rectangular resin, and a collector terminal C1, an emitter terminal E2, and a collector-emitter terminal C2E1 that are arranged to protrude parallel to each other from the surface of the resin. The collector terminal E1, the emitter terminal E2, and the collector-emitter terminal C2E1 are electrically connected to the stack 210 by connecting bolts, whereby the semiconductor module M is mounted on the stack 210.

[0033] When viewed from the top surface of the housing 215, the multiple semiconductor modules M and the multiple capacitors 40 are arranged side by side in the horizontal direction. The multiple semiconductor modules M and the multiple capacitors 40 are also arranged such that the positions of the collector terminal E1, the emitter terminal E2, and the collector-emitter terminal C2E1 of the semiconductor module M in the vertical direction of the housing 215 are equal to the positions of the positive terminal 42P and the negative terminal 42N of the capacitor 40 in the vertical direction. This allows the multiple semiconductor modules M and the multiple capacitors 40 to be electrically connected via the laminate 210.

[0034] However, since the semiconductor modules M and the capacitors 40 are arranged side by side in the horizontal direction, there is a concern that the area occupied by the power conversion device 200 will increase as the number of capacitors 40 increases.

[0035] Furthermore, because the multiple capacitors 40 are arranged in two rows, there is variation in the distance between the capacitors 40 and the semiconductor module M among the multiple capacitors 40. Arrow B1 in Fig. 10 represents the distance between the capacitors 40 in the row closer to the semiconductor module M and the semiconductor module M. Arrow B2 in Fig. 10 represents the distance between the capacitors 40 in the row farther from the semiconductor module M and the semiconductor module M. The length of arrow B2 is shorter than the length of arrow B1.

[0036] Here, the distance between the capacitor 40 and the semiconductor module M is proportional to the inductance of the current path formed between the capacitor 40 and the semiconductor module M. Therefore, the inductance of the current path increases as the distance between the capacitor 40 and the semiconductor module M increases. An increase in the inductance of the current path is a factor that increases the power loss occurring in the power conversion device.

[0037] Thus, the power conversion device 200 according to the comparative example has a problem that the area occupied by the power conversion device increases according to the number of capacitors 40 constituting the capacitor circuit 16. In addition, there is a problem that the inductance of the current path varies among the plurality of capacitors 40 because the distance between the capacitor 40 and the semiconductor module M varies among the plurality of capacitors 40. There is a concern that this variation in inductance among the plurality of capacitors 40 may adversely affect the characteristics of the power conversion device 200. The present embodiment provides a new mounting structure that can solve these problems.

[0038] (Mounting structure of power conversion device according to the present embodiment) Fig. 3 is an external perspective view of power conversion device 100 according to the present embodiment. The perspective view shown in Fig. 3 is a perspective view of power conversion device 100 as seen from the front side.

[0039] As shown in Fig. 3, the power conversion device 100 has a rectangular parallelepiped shape. In the following description, the left-right direction when the power conversion device 100 is viewed from the front is defined as the X direction, the front-rear direction is defined as the Y direction, and the vertical direction is defined as the Z direction. The X direction corresponds to the "second direction" and the Y direction corresponds to the "first direction".

[0040] The power conversion device 100 is configured by connecting a plurality of semiconductor modules M and a plurality of capacitors 40 to a laminate 20. The power conversion device 100 differs from the power conversion device 200 according to the comparative example shown in Figs. 9 and 10 in the arrangement of the plurality of capacitors 40 and the shape of the laminate 20.

[0041] Fig. 4 is an exploded perspective view of the power conversion device 100 shown in Fig. 3. As shown in Fig. 4, the power conversion device 100 includes a first conductive plate 22, a second conductive plate 24, a substrate 30, a plurality of semiconductor modules M1 to M6, a plurality of capacitors 40_1 to 40_7, a first fixed plate 50, a second fixed plate 52, and a housing 15. The first conductive plate 22, the second conductive plate 24, the substrate 30, the plurality of semiconductor modules M1 to M6, the plurality of capacitors 40_1 to 40_7, the first fixed plate 50, and the second fixed plate 52 are accommodated inside the housing 15.

[0042] The substrate 30 is attached to the top of the housing 15 in parallel with the bottom surface of the housing 15. The substrate 30 has a rectangular flat plate shape. The substrate 30 has a first surface 30a and a second surface 30b opposite to the first surface 30a. The second surface 30b faces the bottom surface of the housing 15.

[0043] The multiple semiconductor modules M1 to M6 are mounted on a first surface 30a of the substrate 30. The multiple semiconductor modules M1 to M6 are arranged on the first surface 30a of the substrate 30 in the Y direction.

[0044] The plurality of capacitors 40_1 to 40_7 configure the capacitor circuit 16. The plurality of capacitors 40_1 to 40_7 are mounted on the second surface 30b side of the substrate 30.

[0045] Specifically, the capacitors 40_1 to 40_7 are classified into first capacitors 40_1, 40_3, 40_5, and 40_7 and second capacitors 40_2, 40_4, and _6. When the number of capacitors 40 constituting the capacitor circuit 16 is an even number, it is preferable that the number of the first capacitors and the number of the second capacitors are the same. When the number of capacitors 40 constituting the capacitor circuit 16 is an odd number, it is preferable that the difference between the number of the first capacitors and the number of the second capacitors is 1.

[0046] The first capacitors 40_1, 40_3, 40_5, and 40_7 are fixed to a first fixed plate 50. The first fixed plate 50 has a rectangular flat plate shape and is configured to fix the second end of the cylindrical portion 44 of the first capacitor 40 in the extension direction. In the example of FIG. 4, a plurality of receiving jigs 60 are provided on the first fixed plate 50. The receiving jig 60 has a cylindrical shape and can arrange the cylindrical portion 44 of the capacitor 40 inside. By arranging the first capacitor 40 in the receiving jig 60, the first capacitor 40 can be positioned with respect to the first fixed plate 50. As a result, the first capacitors 40_1, 40_3, 40_5, and 40_7 are arranged in a row so as to stand on the first fixed plate 50.

[0047] The second capacitors 40_2, 40_4, 40_6 are fixed to a second fixed plate 52. The second fixed plate 52 has a rectangular flat plate shape and fixes a second end of the second capacitor 40 in the extending direction of the cylindrical portion 44. Similar to the first fixed plate 50, the second fixed plate 52 is provided with a plurality of receiving jigs 60 for positioning the second capacitor 40 with respect to the second fixed plate 52. As a result, the second capacitors 40_2, 40_4, 40_6 are arranged in a row so as to stand on the second fixed plate 52.

[0048] The first fixed plate 50 and the second fixed plate 52 are connected to the second surface 30b of the substrate 30. Specifically, the first fixed plate 50 is connected to the second surface 30b of the substrate 30 so as to be perpendicular to the second surface 30b of the substrate 30 and extend in the Y direction. As a result, the first capacitors 40_1, 40_3, 40_5, 40_7 are arranged in a row in the Y direction with the cylindrical portions 44 extending in the X direction.

[0049] The second fixed plate 52 is also connected to the second surface 30b of the substrate 30 so as to be perpendicular to the second surface 30b of the substrate 30 and extend in the Y direction. That is, the second fixed plate 52 is provided parallel to the first fixed plate 50. As a result, the second capacitors 40_2, 40_4, 40_6 are arranged in a row in the Y direction with the cylindrical portions 44 extending in the X direction.

[0050] Furthermore, in the above configuration, the first fixed plate 50 and the second fixed plate 52 are arranged such that the surfaces for fixing the capacitors 40 face each other. Therefore, the electrode terminals 42P and 42N of the second capacitors 40_2, 40_4, and 40_6 are located on the opposite side in the X direction to the electrode terminals 42P and 42N of the first capacitors 40_1, 40_3, 40_5, and 40_7.

[0051] The first fixing plate 50 is formed with a plurality of (e.g., three) through holes 500 for passing through the cylindrical portions 44 of the second capacitors 40_2, 40_4, 40_6, respectively. The plurality of through holes 500 are formed and aligned along the Y direction. The through holes 500 correspond to one example of a "first through hole".

[0052] The second fixing plate 52 is formed with a plurality of (for example, four) through holes 520 for passing through the cylindrical portions 44 of the first capacitors 40_1, 40_3, 40_5, 40_7, respectively. The plurality of through holes 520 are formed and aligned along the Y direction. The through holes 520 correspond to one example of a "second through hole".

[0053] The first conductive plate 22 constitutes the DC line 10. The second conductive plate 24 constitutes the DC line 12. The first conductive plate 22 and the second conductive plate 24 are stacked via an insulating plate (not shown). The power conversion device 100 further includes a third conductive plate (not shown) that constitutes the AC line 14, and the three conductive plates and four insulating plates are alternately stacked to form the laminate 20.

[0054] The first conductive plate 22 has a base 220 and bent portions 222 and 224. The base 220 has a rectangular flat plate shape, and a plurality of through holes 221 penetrating in the thickness direction are formed in the base 220. The plurality of through holes 221 are formed by arranging a plurality of sets (e.g., six sets) of through holes 221 along the Y direction, with three through holes 221 forming one set.

[0055] Bending portion 222 is provided at a first end of base portion 220 in the X direction and is bent perpendicularly to base portion 220. Bending portion 224 is provided at a second end of base portion 220 in the X direction and is bent perpendicularly to base portion 220. Bending portions 222 and 224 have a rectangular plate shape. Base portion 220 corresponds to the "first base portion", bending portion 222 corresponds to the "first bending portion", and bending portion 224 corresponds to the "second bending portion".

[0056] A plurality of (e.g., four) through holes 223 are formed in the bent portion 222 and pass through the bent portion 222 in the thickness direction. The plurality of through holes 223 are aligned along the Y direction. A plurality of (e.g., four) through holes 225 are formed in the bent portion 224 and pass through the bent portion 224 in the thickness direction. The plurality of through holes 225 are aligned along the Y direction.

[0057] The second conductive plate 24 has a base 240 and bent portions 242, 246. The base 240 has the same shape as the base 220 of the first conductive plate 22. The base 240 is formed with a plurality of through holes 241 penetrating in the thickness direction. The plurality of through holes 241 are formed by arranging a plurality of sets (e.g., six sets) of through holes 241 along the Y direction, with three through holes 241 forming one set.

[0058] With the first conductive plate 22 and the second conductive plate 24 stacked together, the through hole 221 formed in the base 220 of the first conductive plate 22 and the through hole 241 formed in the base 240 of the second conductive plate 24 overlap with each other and are arranged concentrically. A connecting bolt is inserted into the multiple through holes 221, 241. The connecting bolt allows the DC line 10 to be electrically connected to the collector terminals C1 of the multiple semiconductor modules M1 to M6. Also, the DC line 12 can be electrically connected to the emitter terminals E2 of the multiple semiconductor modules M1 to M6.

[0059] Bending portion 242 is provided at a first end of base portion 240 in the X direction and is bent perpendicularly to base portion 240. Bending portion 246 is provided at a second end of base portion 240 in the X direction and is bent perpendicularly to base portion 240. Bending portions 242 and 246 have a rectangular plate shape. Base portion 240 corresponds to the "second base portion", bending portion 242 corresponds to the "third bending portion", and bending portion 246 corresponds to the "fourth bending portion".

[0060] A plurality of through holes 243, 244 are formed in the bent portion 242, penetrating the bent portion 242 in the thickness direction. The plurality of (e.g., four) through holes 243 are formed and aligned along the Y direction. The plurality of (e.g., four) through holes 244 are formed and aligned along the Y direction. The through holes 243 and the through holes 244 are formed and aligned in the Z direction.

[0061] In a state where the first conductive plate 22 and the second conductive plate 24 are laminated, the through hole 223 formed in the bent portion 222 of the first conductive plate 22 and the through hole 243 formed in the bent portion 242 of the second conductive plate 24 overlap with each other and are arranged concentrically. A connecting bolt is inserted into the plurality of through holes 223, 243. The connecting bolt allows the DC line 10 to be electrically connected to the positive electrode terminal 42P of the first capacitors 40_1, 40_3, 40_5, and 40_7. A connecting bolt is inserted into the plurality of through holes 244. The connecting bolt allows the DC line 12 to be electrically connected to the negative electrode terminal 42N of the first capacitors 40_1, 40_3, 40_5, and 40_7.

[0062] A plurality of through holes 247, 248 are formed in the bent portion 246, penetrating the bent portion 246 in the thickness direction. The plurality of (e.g., three) through holes 247 are formed and aligned along the Y direction. The plurality of (e.g., three) through holes 248 are formed and aligned along the Y direction. The through holes 247 and the through holes 248 are formed and aligned in the Z direction.

[0063] In a state where the first conductive plate 22 and the second conductive plate 24 are laminated, the through hole 225 formed in the bent portion 224 of the first conductive plate 22 and the through hole 247 formed in the bent portion 246 of the second conductive plate 24 overlap with each other and are arranged concentrically. A connecting bolt is inserted into the plurality of through holes 225, 247. The connecting bolt allows the DC line 10 to be electrically connected to the positive electrode terminal 42P of the second capacitors 40_2, 40_4, 40_6. A connecting bolt is inserted into the plurality of through holes 248. The connecting bolt allows the DC line 12 to be electrically connected to the negative electrode terminal 42N of the second capacitors 40_2, 40_4, 40_6.

[0064] Fig. 5 is a front view of the power conversion device 100. Fig. 6 is a top view of the power conversion device 100. Fig. 7 is a side view of the power conversion device 100 as viewed from the direction of the arrow VII shown in Fig. 6. Fig. 8 is a side view of the power conversion device 100 as viewed from the direction of the arrow VIII shown in Fig. 6. In Fig. 5, the housing 15 is omitted. In Fig. 6, the housing 15 and the laminated body 20 are omitted.

[0065] As shown in FIG. 5, the power conversion device 100 is configured by stacking a substrate 30 on which multiple semiconductor modules M are mounted, a laminate 20 including a first conductive plate 22 and a second conductive plate 24, above a first fixing plate 50 that fixes the first capacitors 40_1, 40_3, 40_5, 40_7 and a second fixing plate 52 that fixes the second capacitors 40_2, 40_4, 40_6 in the Z direction.

[0066] The first fixing plate 50 and the second fixing plate 52 are arranged such that the surfaces for fixing the capacitors 40 face each other. As shown in Fig. 7, the first capacitors 40_1, 40_3, 40_5, and 40_7 are arranged in a row in the Y direction. As shown in Fig. 8, the second capacitors 40_2, 40_4, and 40_6 are arranged in a row in the Y direction. As shown in Figs. 5 and 6, the electrode terminals 42P and 42N of the second capacitors 40_2, 40_4, and 40_6 are located on the opposite side in the X direction to the electrode terminals 42P and 42N of the first capacitors 40_1, 40_3, _5, and 40_7.

[0067] The positive electrode terminal 42P of the first capacitor 40 is connected to the bent portion 222 of the first conductive plate 22 by a connection bolt inserted into the through holes 223, 243 (FIG. 4). The negative electrode terminal 42N of the first capacitor 40 is connected to the bent portion 242 of the second conductive plate 24 by a connection bolt inserted into the through hole 244 (FIG. 4).

[0068] The positive electrode terminal 42P of the second capacitor 40 is connected to the bent portion 224 of the first conductive plate 22 by a connecting bolt inserted into the through holes 225 and 247. The negative electrode terminal 42N of the second capacitor 40 is connected to the bent portion 246 of the second conductive plate 24 by a connecting bolt inserted into the through hole 248.

[0069] The collector terminal C1 of the semiconductor module M is connected to the base 220 of the first conductive plate 22 by a connecting bolt inserted into the through holes 221 and 241. The emitter terminal E2 of the semiconductor module M is connected to the base 240 of the second conductive plate 24 by a connecting bolt inserted into the through hole 241.

[0070] 5, in a plan view seen from the Y direction, the first capacitor 40 and the second capacitor 40 are disposed so that a portion of each of the cylindrical portions 44 overlaps in the X direction. Also, the first capacitor 40 and the second capacitor 40 are disposed so that a portion of each of the cylindrical portions 44 overlaps in the Z direction.

[0071] When the first capacitor 40 and the second capacitor 40 are arranged side by side along the X direction such that the second ends of the cylindrical portions 44 face each other, the length W of the power conversion device 100 in the X direction is approximately twice the length of the cylindrical portion 44 of the capacitor 40. In contrast, in the present embodiment, the first capacitor 40 and the second capacitor 40 are arranged so as to partially overlap each other in the X direction, thereby making it possible to shorten the length W of the power conversion device 100 in the X direction.

[0072] On the other hand, when the first capacitors 40 and the second capacitors 40 are arranged alternately in a row in the Y direction, the length D of the power conversion device 100 in the Y direction is a length based on the product of the diameter of the cylindrical portion 44 of the capacitor 40 and the number of capacitors 40. Therefore, depending on the number of capacitors 40 that configure the capacitor circuit 16, this may lead to an increase in the area occupied by the power conversion device 100.

[0073] In this embodiment, the first capacitor 40 and the second capacitor 40 are arranged such that a portion of each cylindrical portion 44 overlaps with each other in the Z direction, so that the plurality of capacitors 40 are arranged in a staggered manner along the Y direction, as shown in Figs. 7 and 8. That is, the plurality of capacitors 40 are arranged at equal intervals in two rows in the Y direction, and are arranged alternately between the opposing rows. This makes it possible to narrow the interval between the first capacitors 40 adjacent to each other in the Y direction, and the interval between the second capacitors 40 adjacent to each other in the Y direction. Therefore, the length W in the X direction and the length D in the Y direction of the power conversion device 100 can be shortened, and the area occupied by the power conversion device 100 can be reduced.

[0074] Furthermore, by arranging the first capacitor 40 and the second capacitor 40 so that portions of their cylindrical portions 44 overlap in the Z direction, the difference between the Z direction positions of the electrode terminals 42P, 42N of the first capacitor 40 and the Z direction positions of the electrode terminals 42P, 42N of the second capacitor 40 can be reduced.

[0075] An arrow A1 in Fig. 5 represents the distance between the first capacitor 40 and the semiconductor module M. An arrow A2 in Fig. 5 represents the distance between the second capacitor 40 and the semiconductor module M. By appropriately setting the Z-direction positions of the first capacitor 40 and the second capacitor 40 and the X-direction position of the semiconductor module M, it is possible to eliminate the variation in the distance between the semiconductor module M and the first capacitor 40 and the distance between the semiconductor module M and the second capacitor 40. Therefore, according to the present embodiment, it is possible to solve the problem of variation in the inductance of the current path among the multiple capacitors 40 without increasing the area occupied by the power conversion device 100.

[0076] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The scope of the present disclosure is defined by the claims, not the above description, and is intended to include all modifications within the meaning and scope of the claims. [Explanation of symbols]

[0077] 5 control device, 10, 12 DC line, 14 AC line, 15, 215 housing, 16 capacitor circuit, 20, 210 laminate, 22 first conductive plate, 24 second conductive plate, 30, 230 substrate, 40 capacitor, 42P positive terminal, 42N negative terminal, 44 cylindrical portion, 50 first fixing plate, 52 second fixing plate, 60 receiving jig, 100, 200 power conversion device, 220, 240 base, 222, 224, 242, 246 bent portion, 221, 223, 225, 243, 244, 247, 248, 500, 520 through hole, M, M1 to M6 semiconductor module, C1 collector terminal, E2 emitter terminal, C2E1 Collector-emitter terminals, G1, G2, E1, E2 control terminals, Q1, Q2 semiconductor switching elements, D1, D2 diodes, AC1, AC2 AC terminals, BP1, BP2 positive DC terminals, BN1, BN2 negative DC terminals.

Claims

1. A power conversion device, A plurality of capacitors electrically connected in parallel; a plurality of semiconductor modules electrically connected to the plurality of capacitors; a substrate having a first surface on which the semiconductor modules are mounted and a second surface opposite to the first surface; the plurality of semiconductor modules are arranged on the first surface of the substrate in an aligned manner along a first direction perpendicular to a vertical direction of the power conversion device, Each of the plurality of capacitors has a cylindrical portion and first and second electrode terminals disposed at a first end in an extension direction of the cylindrical portion; the plurality of capacitors includes at least one first capacitor and at least one second capacitor; the at least one first capacitor is disposed on the second surface side of the substrate such that an extension direction of the cylindrical portion is a second direction perpendicular to the vertical direction and the first direction; the at least one second capacitor is disposed on the second surface side of the substrate such that an extending direction of the cylindrical portion is the second direction and the first and second electrode terminals are positioned on an opposite side in the second direction to the first and second electrode terminals of the at least one first capacitor; A power conversion device, wherein, in a planar view from the first direction, the at least one first capacitor and the at least one second capacitor are arranged so that a portion of each of the cylindrical portions overlaps in the vertical direction and the second direction.

2. the at least one first capacitor includes a plurality of first capacitors; the at least one second capacitor includes a plurality of second capacitors; In a plan view seen from the second direction, the plurality of first capacitors and the plurality of second capacitors are arranged in a staggered manner in the first direction, 2. The power conversion device according to claim 1, wherein, in a plan view from the first direction, the first capacitor and the second capacitor adjacent in the second direction are arranged such that a portion of each of the cylindrical portions overlaps in the vertical direction and the second direction.

3. Each of the plurality of semiconductor modules has a first main electrode terminal and a second main electrode terminal, A first conductive plate; a second conductive plate laminated on the first conductive plate via an insulating plate; The first conductive plate is a first base portion facing the first surface of the substrate and to which the first main electrode terminals of the plurality of semiconductor modules are connected; a first bent portion bent in the vertical direction from a first end of the first base portion in the second direction, the first bent portion being electrically connected to the first electrode terminal of the at least one first capacitor; a second bent portion bent in the vertical direction from a second end of the first base in the second direction, the second bent portion being electrically connected to the first electrode terminal of the at least one second capacitor; The second conductive plate is a second base portion overlapping the first base portion and to which the second main electrode terminals of the plurality of semiconductor modules are connected; a third bent portion bent in the vertical direction from a first end of the second base portion in the second direction, the third bent portion being electrically connected to the second electrode terminal of the at least one first capacitor; 3. The power conversion device according to claim 1, further comprising: a fourth bent portion bent in the vertical direction from a second end of the second base portion in the second direction, the fourth bent portion being electrically connected to the second electrode terminal of the at least one second capacitor.

4. A plurality of through holes are formed in the first base portion along the first direction, The second base portion has a plurality of through holes formed therein that overlap with the through holes formed in the first base portion, The power conversion device according to claim 3 , wherein a bolt is provided so as to be able to be inserted through a through hole formed in the first base and a through hole formed in the second base.

5. A plurality of through holes are formed in the first bent portion along the first direction, The third bent portion has a plurality of through holes formed therein, the through holes overlapping with the through holes formed in the first bent portion, The power conversion device according to claim 3 , wherein a bolt is inserted through a through hole formed in the first bent portion and a through hole formed in the third bent portion.

6. A plurality of through holes are formed in the second bent portion along the first direction, A plurality of through holes are formed in the fourth bent portion so as to overlap with the through holes formed in the second bent portion, The power conversion device according to claim 3 , wherein a bolt is provided so as to be able to pass through a through hole formed in the second bent portion and a through hole formed in the fourth bent portion.

7. a first fixing plate connected to the second surface of the substrate in the vertical direction and extending in the first direction; a second fixing plate connected to the second surface of the substrate in the vertical direction and provided parallel to the first fixing plate, the first fixing plate fixes a second end of the at least one first capacitor in an extending direction of the cylindrical portion; the second fixing plate fixes a second end of the at least one second capacitor in an extending direction of the cylindrical portion, the first fixing plate is formed with at least one first through hole for allowing the cylindrical portion of the at least one second capacitor to pass therethrough; The power conversion device according to claim 1 , wherein the second fixing plate is formed with at least one second through hole for allowing the cylindrical portion of the at least one first capacitor to pass therethrough.