Method for producing light-emitting device

Abstract

The present invention provides a method for producing a light-emitting device featuring a high degree of design freedom and favorable yields. The method comprises: forming a first electrode on top of an insulating surface; forming an organic compound layer having at least an emissive layer on top of the first electrode; forming an aluminum-containing sacrificial layer on the surface of the organic compound layer; forming a mask overlapping at least a portion of the first electrode on top of the sacrificial layer; forming the sacrificial layer into an island shape by lithography using a mask; forming the organic compound layer into an island shape by using the island-shaped sacrificial layer as a mask; exposing the surface of the island-shaped organic compound layer by etching with an aqueous solution containing hydrofluoric acid and a Brønsted acid with a pH of 3 or higher; and forming a second electrode to cover the island-shaped organic compound layer.

Description

Method for fabricating a light-emitting device

[0001] One embodiment of the present invention relates to a light-emitting element, a light-emitting device, and a manufacturing method of the light-emitting element. Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one embodiment of the present invention disclosed in this specification include a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, a power storage device, a memory device, an imaging device, a driving method thereof, or a manufacturing method thereof.

[0002] Light-emitting elements (also called light-emitting devices) that utilize electroluminescence (EL) using organic compounds are being put into practical use. The basic structure of these organic EL devices is a pair of electrodes sandwiching an organic compound layer (also called an EL layer) containing a light-emitting material between them. By applying a voltage to this device, carriers are injected, and the recombination energy of the carriers is utilized to emit light from the light-emitting material.

[0003] Since such light-emitting devices are self-luminous, when used as display pixels, they offer advantages such as higher visibility and no need for backlighting compared to liquid crystal displays, making them particularly suitable for flat panel displays. Another major advantage of displays using such light-emitting devices is that they can be fabricated to be thin and lightweight. Another feature is their extremely fast response time.

[0004] Furthermore, these light-emitting devices can have a continuous light-emitting layer formed two-dimensionally, enabling them to emit light in a planar form. This is a feature that is difficult to obtain with point light sources such as incandescent lamps or LEDs, or linear light sources such as fluorescent lamps, making them highly useful as planar light sources for lighting and other applications.

[0005] Although light emitting devices using such light emitting devices are suitable for a variety of electronic devices, research and development is ongoing to find light emitting devices with even better characteristics.

[0006] In order to obtain a light-emitting device with higher resolution using an organic EL device, research has been conducted into patterning of organic layers by photolithography using photoresist, etc., instead of vapor deposition using a metal mask. By using photolithography, a light-emitting device with high resolution, where the spacing between organic compound layers is several micrometers, can be obtained (see, for example, Patent Document 1).

[0007] Special table 2018-521459 publication

[0008] When a light-emitting element is fabricated by photolithography, a resist mask is formed using a resist material containing a photosensitive resin, such as a positive resist material or a negative resist material. However, when an organic compound layer is to be processed, the etching selectivity between the organic compound layer and the resist material may not be sufficient.

[0009] In contrast to this, there is a method in which an inorganic mask is formed on an organic compound layer using a photolithography method with an inorganic material, and the organic compound layer is processed using the inorganic mask. The use of the inorganic mask enables fine processing of the organic compound layer, but the inorganic material used for the inorganic mask may diffuse into the organic compound layer, causing contamination.

[0010] Therefore, an object of one embodiment of the present invention is to provide a method for manufacturing a light-emitting device in which, when an inorganic mask is used in processing an organic compound layer by photolithography, an inorganic material used for the inorganic mask is prevented from diffusing into the organic compound layer, and the organic compound can be formed into a desired shape.

[0011] In addition, when a sacrificial layer is provided between the organic compound layer and the inorganic mask in the processing of the organic compound layer, it is necessary to control the etching rate for removing the sacrificial layer. Therefore, one embodiment of the present invention aims to provide a method for manufacturing a light-emitting device that includes processing of an organic compound layer, which enables etching of a sacrificial layer at a controlled etching rate, and a chemical solution (also referred to as an etchant) used in the etching process.

[0012] Another object of one embodiment of the present invention is to provide a light-emitting element that enables the manufacture of a high-definition display device with favorable characteristics.Another object of another embodiment of the present invention is to provide a high-definition display device with favorable display quality.Another object of another embodiment of the present invention is to provide a high-definition display device with favorable yield.Another object of another embodiment of the present invention is to provide a display device with high design freedom.Another object of another embodiment of the present invention is to provide a high-definition and inexpensive display device.

[0013] One embodiment of the present invention is a method for manufacturing a light-emitting device, including: forming a first electrode over an insulating surface; forming an organic compound layer having at least a light-emitting layer over the first electrode; forming a sacrificial layer containing aluminum on an outermost surface of the organic compound layer; forming a mask over the sacrificial layer to overlap with at least a part of the first electrode; forming the sacrificial layer into an island shape by lithography using the mask; forming an organic compound layer into an island shape using the island-shaped sacrificial layer as a mask; exposing the outermost surface of the island-shaped organic compound layer by etching with an aqueous solution containing hydrofluoric acid and a Bronsted acid having a pH of 3 or more; and forming a second electrode to cover the island-shaped organic compound layer.

[0014] One embodiment of the present invention is a method for manufacturing a light-emitting device, comprising: forming a first electrode over an insulating surface; forming an organic compound layer having at least a light-emitting layer over the first electrode; forming a sacrificial layer containing aluminum on an outermost surface of the organic compound layer; forming a mask over the sacrificial layer to overlap with at least a part of the first electrode; forming the sacrificial layer into an island shape by lithography using the mask; forming the organic compound layer into an island shape using the island-shaped sacrificial layer as a mask; forming an organic insulating film having an opening in a region overlapping with the first electrode; exposing the outermost surface of the island-shaped organic compound layer through the opening by etching with an aqueous solution containing hydrofluoric acid and a Bronsted acid having a pH of 3 or more; and forming a second electrode to cover the island-shaped organic compound layer and the organic insulating film.

[0015] One embodiment of the present invention is a method for manufacturing a light-emitting device, comprising: forming a first electrode on an insulating surface; forming an organic compound layer having at least a light-emitting layer over the first electrode; forming a sacrificial layer containing aluminum on an outermost surface of the organic compound layer; forming a mask over the sacrificial layer to overlap with at least a part of the first electrode; forming the sacrificial layer into an island shape by lithography using the mask; forming the organic compound layer into an island shape using the sacrificial layer as a mask; forming a protective layer containing aluminum to cover a top surface and a side surface of the sacrificial layer and a side surface of the island-shaped organic compound layer;

[0016] One embodiment of the present invention is a method for manufacturing a light-emitting device, comprising: forming a first electrode on an insulating surface; forming an organic compound layer having at least a light-emitting layer over the first electrode; forming a sacrificial layer containing aluminum on an outermost surface of the organic compound layer; forming a mask over the sacrificial layer to overlap with at least a part of the first electrode; forming the sacrificial layer into an island shape by lithography using the mask; forming the organic compound layer into an island shape using the island-shaped sacrificial layer as a mask; forming a protective layer containing aluminum to cover a top surface and a side surface of the sacrificial layer and a side surface of the island-shaped organic compound layer; forming an organic insulating film over the protective layer having an opening in a region overlapping with the first electrode;

[0017] In the light-emitting device, the organic compound layer is formed on the first electrode.

[0018] In the light-emitting device, the side surface of the organic compound layer is in contact with the protective layer.

[0019] In the light-emitting device, the first electrode is in contact with the protective layer.

[0020] In the light emitting device, the sacrificial, or protective, layer is aluminum oxide.

[0021] In the light-emitting device, the Bronsted acid having a pH of 3 or more is phosphoric acid.

[0022] In the light-emitting device, the organic insulating film contains an acrylic resin.

[0023] In this specification, the term "light-emitting device" includes an image display device using an organic EL device. The term "light-emitting device" may also include a module in which a connector, such as an anisotropic conductive film or a TCP (Tape Carrier Package), is attached to an organic EL device, a module in which a printed wiring board is provided at the end of a TCP, or a module in which an IC (integrated circuit) is directly mounted on an organic EL device using a COG (Chip On Glass) method. Furthermore, lighting fixtures and the like may have a light-emitting device.

[0024] According to one embodiment of the present invention, contamination due to a processing step of an organic compound layer can be suppressed. Furthermore, according to one embodiment of the present invention, defects in the shape of a light-emitting device during processing of an organic compound layer can be suppressed. Furthermore, according to one embodiment of the present invention, the occurrence of process variations in a light-emitting device can be suppressed. Alternatively, according to one embodiment of the present invention, an etchant with an easily controllable etching rate can be provided.

[0025] One embodiment of the present invention can provide a light-emitting element that enables the manufacture of a high-definition display device with favorable characteristics. Another embodiment of the present invention can provide a high-definition display device with favorable display quality. Another embodiment of the present invention can provide a high-definition display device with favorable yield. Another embodiment of the present invention can provide a display device with high design freedom. Another embodiment of the present invention can provide a high-definition and inexpensive display device.

[0026] Note that the description of this effect does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these will become apparent from the description in the specification, drawings, claims, etc., and it is possible to extract other effects from the description in the specification, drawings, claims, etc.

[0027] FIGS. 1A to 1D are diagrams illustrating a light-emitting device. FIGS. 2A and 2B are top views and cross-sectional views of a light-emitting device. FIGS. 3A to 3D are diagrams illustrating a light-emitting device. FIGS. 4A to 4E are cross-sectional views illustrating an example of a manufacturing method of a display device. FIGS. 5A and 5B are cross-sectional views illustrating an example of a manufacturing method of a display device. FIGS. 6A to 6D are cross-sectional views illustrating an example of a manufacturing method of a display device. FIGS. 7A to 7C are cross-sectional views illustrating an example of a manufacturing method of a display device. FIGS. 8A to 8C are cross-sectional views illustrating an example of a manufacturing method of a display device. FIGS. 9A to 9C are cross-sectional views illustrating an example of a manufacturing method of a display device. FIGS. 10A and 10B are perspective views illustrating a structural example of a display module. FIGS. 11A and 11B are cross-sectional views illustrating a structural example of a display device. FIG. 12 is a perspective view illustrating a structural example of a display device. FIG. 13 is a cross-sectional view illustrating a structural example of a display device. FIG. 14 is a cross-sectional view illustrating a structural example of a display device. FIG. 15A is a cross-sectional view illustrating a structural example of a display device, and FIGS. 15B and 15C are top views of a display device. FIG. 16 is a cross-sectional view illustrating a structural example of a display device. FIG. 17A is a cross-sectional view showing an example of the configuration of a display device, and FIGS. 17B and 17C are top views of the display device. FIGS. 18A to 18D are views showing an example of an electronic device. FIGS. 19A to 19F are views showing an example of an electronic device. FIGS. 20A to 20G are views showing an example of an electronic device. FIG. 21 is a view explaining the structure of a light-emitting device according to an example. FIGS. 22A and 22B are views explaining cross-sectional observation of each light-emitting device according to an example. FIGS. 23A and 23B are views explaining cross-sectional observation of each light-emitting device according to an example. is a view explaining the driving voltage of each light-emitting device according to an example. FIG. 25 is a view explaining the current efficiency of each light-emitting device according to an example.

[0028] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes in form and details can be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

[0029] In this specification, etc., a device fabricated using a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. In addition, in this specification, etc., a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure.

[0030] Furthermore, in this specification and the like, structures that have not undergone shape processing after film formation are generally referred to as "films," and structures that have undergone shape processing are generally referred to as "layers." However, these terms are used solely for the purpose of making it easier to understand the progress of the process, and there is no significant difference between them, so "film" can be read as "layers," and "layers" can be read as "films." In particular, when describing structures that have not undergone a processing step, both terms are considered to have the same meaning.

[0031] (Embodiment 1) In one embodiment of the present invention, a sacrificial layer is formed between an organic compound layer to be processed and an inorganic mask, thereby enabling fine processing of the organic compound layer while suppressing contamination of the organic compound layer by the inorganic mask.

[0032] If the sacrificial layer has defects such as pinholes, the solvent of the resist may seep in and dissolve the organic compound layer. In addition, by using a dense film for the sacrificial layer, damage during the formation of the film that will become the inorganic mask layer can be reduced.

[0033] Specifically, the sacrificial layer may be formed using an inorganic insulator containing aluminum, such as aluminum oxide, aluminum nitride, or aluminum oxynitride, formed by atomic layer deposition (ALD). In particular, aluminum oxide is preferably used because an oxide insulating film has higher adhesion to an organic compound layer than a nitride insulating film. Furthermore, by forming the sacrificial layer using the ALD method, damage to the organic compound layer, which is the surface on which the sacrificial layer is formed, can be reduced, and a film with fewer pinholes can be formed.

[0034] Incidentally, although film formation using the ALD method can form dense films, the film formation speed is slower than that of sputtering, etc. Therefore, the sacrificial layer has a minimum film thickness required for the process, and the inorganic mask layer formed on the sacrificial layer is formed using plasma CVD, sputtering, or PLD, thereby improving yield.

[0035] The sacrificial layer is removed by using an etchant containing hydrofluoric acid and a pH of 3 or more or water (H ２ An aqueous solution containing a Bronsted acid having an acid dissociation constant pKa of 0 to 13 with respect to the acid (H O) is used. ２ The Bronsted acid having an acid dissociation constant pKa of 0 or more with respect to HCl (O) is preferably an acid having a buffering effect. By adding an acid having a buffering effect, it is possible to suppress fluctuations in pH of the aqueous solution used as the etchant. Therefore, since changes in concentration or pH due to volatilization of the acid or water are unlikely to occur, the etching rate is stable, the process is stabilized, and handling becomes easier.

[0036] pH is 3 or higher or water (H ２ Examples of Bronsted acids having an acid dissociation constant pKa of 0 or more and 13 or less with respect to HCl (O) include phosphoric acid, phosphorous acid, hypophosphorous acid, diphosphoric acid, sulfonic acid, carbonic acid, 1,3-diketones (acetylacetone, ethyl acetoacetate, Meldrum's acid, malonic acid), oxalic acid, acetic acid, formic acid, boric acid, organic boronic acids (phenylboronic acid, methylboronic acid, ethylboronic acid, furanylboronic acid), citric acid, etc.

[0037] In particular, when a dense aluminum oxide film is used as the sacrificial layer, the aqueous solution containing hydrofluoric acid and phosphoric acid has a high etching rate for aluminum oxide in the process of removing the dense aluminum oxide film on the organic compound layer, allowing for high processing yields. Furthermore, the aqueous solution containing hydrofluoric acid and phosphoric acid has little effect on the organic compound layer exposed by removing the sacrificial layer, making it less likely to cause damage during processing. Furthermore, the aqueous solution containing hydrofluoric acid and phosphoric acid is less likely to penetrate under other structures of the light-emitting device, including the light-emitting device, and has high processing precision, allowing for reduced process variation.

[0038] The light-emitting element of one embodiment of the present invention can be processed with sufficient precision to fabricate a high-definition display device because the organic compound layer is processed by photolithography. Furthermore, the lithography process can be performed on the electron injection layer far from the light-emitting layer, so that the light-emitting element can have excellent characteristics. As described above, the light-emitting element of one embodiment of the present invention having such a structure can realize a high-definition display device and can have excellent characteristics.

[0039] Note that the organic compound layer in the light-emitting element of one embodiment of the present invention is processed at one time by photolithography, and therefore the contours of all layers included in the organic compound layer are approximately identical. Here, "approximately identical" in this specification means that the deviation between the contour A of any layer A included in the organic compound layer and the contour B of any other layer B is within 5% of the width of the organic compound layer on a line perpendicular to the contours of the compared portions. Furthermore, if the end face of the organic compound layer has a tapered shape, continuous changes in the contour are allowed.

[0040] The structure of this embodiment mode can be used in appropriate combination with other structures.

[0041] Embodiment 2 In this embodiment, a light-emitting device according to one embodiment of the present invention and a manufacturing method thereof will be described.

[0042] 1A illustrates a light-emitting device 130, which is an example of a light-emitting device according to one embodiment of the present invention. The light-emitting device 130 includes an organic compound layer 103 including a light-emitting layer 113 between a first electrode 101 including an anode and a second electrode 102 including a cathode.

[0043] 1B illustrates a light-emitting device 130, which is another example of a light-emitting device according to one embodiment of the present invention. The light-emitting device 130 is a tandem light-emitting device. The light-emitting device 130 includes, as the organic compound layer 103, a first light-emitting unit 501 including a first light-emitting layer 113_1, a second light-emitting unit 502 including a second light-emitting layer 113_2, and an intermediate layer 160.

[0044] In this embodiment, a light-emitting device having one intermediate layer 160 and two light-emitting units will be described as an example, but the light-emitting device may also have n (n is an integer greater than or equal to 1) intermediate layers and n+1 light-emitting units.

[0045] For example, the light-emitting device 130 shown in FIG. 1C is an example of a tandem light-emitting device in which n is 2 and the organic compound layer 103 includes a first light-emitting unit 501, a first intermediate layer 160_1, a second light-emitting unit 502, a second intermediate layer 160_2, and a third light-emitting layer 113_3. The color gamuts of the light emitted by the light-emitting layers in each light-emitting unit may be the same or different. The light-emitting layers may have a single layer or a stacked structure. For example, white light can be obtained by configuring the first light-emitting unit and the third light-emitting unit to emit light in the blue region, and the second light-emitting unit to emit light in the red region and the green region from the stacked light-emitting layer.

[0046] 1D is an example of a tandem light-emitting device in which n is 3 and the organic compound layer 103 includes a first light-emitting unit 501, a first intermediate layer 160_1, a second light-emitting unit 502, a second intermediate layer 160_2, a third light-emitting unit 503, a third intermediate layer 160_3, and a fourth light-emitting unit 504 including a fourth light-emitting layer 113_4. The color gamuts of the light emitted by the light-emitting layers in each light-emitting unit may be the same or different. The light-emitting layer may have a single layer or a stacked structure. For example, the four light-emitting units may be configured such that three of them are blue (B) and the remaining one is green (G), two of them are blue (B) and the remaining two are yellow (Y), or one of them is red (R), one of them is green (G), and the remaining two are blue (B).

[0047] The light-emitting device 130 is a light-emitting device fabricated by, for example, lithography. In the case of a light-emitting device fabricated by lithography, at least the light-emitting layer 113 or the second light-emitting layer 113_2 and the organic compound layer closer to the first electrode 101 than the light-emitting layer 113 are processed simultaneously, and therefore, their edges are generally aligned in the vertical direction.

[0048] The organic compound layer 103 may include other functional layers in addition to the light-emitting layer. FIG. 1A illustrates a configuration in which the organic compound layer 103 includes a hole injection layer 111, a hole transport layer 112, an electron transport layer 114, and an electron injection layer 115 in addition to the light-emitting layer 113. The first light-emitting unit 501 and the second light-emitting unit 502 may also include other functional layers in addition to the light-emitting layer. FIG. 1B illustrates a configuration in which the first light-emitting unit 501 includes a hole injection layer 111, a first hole transport layer 112_1, and a first electron transport layer 114_1 in addition to the first light-emitting layer 113_1, and the second light-emitting unit 502 includes a second hole transport layer 112_2, a second electron transport layer 114_2, and an electron injection layer 115 in addition to the second light-emitting layer 113_2. However, the configuration of the organic compound layer 103 in the present invention is not limited to this, and any of the layers may be omitted, or other layers may be provided, such as a carrier blocking layer (hole blocking layer, electron blocking layer), an exciton blocking layer, etc.

[0049] Specific Structural Example A display device according to one embodiment of the present invention will be described in detail below. As illustrated in FIGS. 2A and 2B, a display device is formed in which a plurality of light-emitting devices 130 are formed over an insulating layer 175.

[0050] The display device 100 has a pixel section 177 in which a plurality of pixels 178 are arranged in a matrix. The pixel 178 has a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0051] In this specification and the like, when describing matters common to, for example, the subpixels 110R, 110G, and 110B, they may be referred to as the subpixels 110. When describing matters common to other components distinguished by alphabets, they may also be described using symbols without the alphabets.

[0052] The sub-pixel 110R emits red light, the sub-pixel 110G emits green light, and the sub-pixel 110B emits blue light. This allows an image to be displayed in the pixel unit 177. Note that in this embodiment, sub-pixels of three colors, red (R), green (G), and blue (B), are described as an example, but combinations of sub-pixels of other colors may also be used. Furthermore, the number of sub-pixels is not limited to three, and may be four or more. Examples of four sub-pixels include sub-pixels of four colors, R, G, B, and white (W), sub-pixels of four colors, R, G, B, and Y, and sub-pixels of R, G, B, and infrared light (IR).

[0053] In this specification, the row direction may be referred to as the X direction, and the column direction may be referred to as the Y direction. The X direction and the Y direction intersect, for example, perpendicularly.

[0054] 2A shows an example in which subpixels of different colors are arranged side by side in the X direction, and subpixels of the same color are arranged side by side in the Y direction. Note that subpixels of different colors may also be arranged side by side in the Y direction, and subpixels of the same color may also be arranged side by side in the X direction.

[0055] A connection portion 140 and a region 141 may be provided outside the pixel portion 177. The region 141 is provided between the pixel portion 177 and the connection portion 140. The organic compound layer 103 is provided in the region 141. In addition, the connection portion 140 is provided with a conductive layer 151C.

[0056] 2 shows an example in which the region 141 and the connection portion 140 are located on the right side of the pixel portion 177, but there are no particular limitations on the positions of the region 141 and the connection portion 140. The region 141 and the connection portion 140 may be singular or plural.

[0057] 2B is an example of a cross-sectional view taken along dashed line A1-A2 in FIG. 2A. As shown in FIG. 2B, display device 100 has insulating layer 171, conductive layer 172 on insulating layer 171, insulating layer 173 on insulating layer 171 and on conductive layer 172, insulating layer 174 on insulating layer 173, and insulating layer 175 on insulating layer 174. Insulating layer 171 is provided on a substrate (not shown). Insulating layers 175, 174, and 173 have openings that reach conductive layer 172, and plugs 176 are provided to fill the openings.

[0058] In the pixel section 177, the light-emitting device 130 is provided on the insulating layer 175 and the plug 176. A protective layer 131 is provided to cover the light-emitting device 130. The substrate 120 is bonded to the protective layer 131 by a resin layer 122. Preferably, an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are provided between adjacent light-emitting devices 130.

[0059] 2B shows multiple cross sections of inorganic insulating layer 125 and insulating layer 127, it is preferable that inorganic insulating layer 125 and insulating layer 127 are connected to each other as a single layer when display device 100 is viewed from above. In other words, it is preferable that insulating layer 127 is an insulating layer having an opening on the first electrode.

[0060] Note that the inorganic insulating layer 125 is provided to suppress damage to the organic compound layer or the first electrode due to processing, film formation, or heat treatment. Therefore, hereinafter, the inorganic insulating layer 125 or a structure corresponding to the inorganic insulating layer 125 may also be referred to as a protective layer.

[0061] 2B shows light-emitting device 130 as light-emitting device 130R, light-emitting device 130G, and light-emitting device 130B. Light-emitting device 130R, light-emitting device 130G, and light-emitting device 130B emit light of different colors. For example, light-emitting device 130R can emit red light, light-emitting device 130G can emit green light, and light-emitting device 130B can emit blue light. Light-emitting device 130R, light-emitting device 130G, or light-emitting device 130B may also emit other visible light or infrared light.

[0062] The display device of one embodiment of the present invention can be, for example, a top-emission type in which light is emitted in a direction opposite to a substrate on which a light-emitting device is formed. Note that the display device of one embodiment of the present invention may also be a bottom-emission type.

[0063] Examples of the light-emitting material contained in the light-emitting device 130 include organic compounds or organometallic complexes such as fluorescent materials, phosphorescent materials, and thermally activated delayed fluorescence (TADF) materials. The light-emitting material may also be an inorganic compound such as quantum dots.

[0064] The light-emitting device 130R has the same configuration as that described in Embodiment 1. It includes a first electrode (pixel electrode) composed of a conductive layer 151R and a conductive layer 152R, an organic compound layer 103R on the first electrode, a common layer 104 on the organic compound layer 103R, and a second electrode (common electrode) 102 on the common layer. The common layer 104 may or may not be provided, but is preferably provided because it can reduce damage to the organic compound layer 103R during processing. When the common layer 104 is provided, it is preferably an electron injection layer. When the common layer 104 is provided, the stacked structure of the organic compound layer 103R and the common layer 104 corresponds to the organic compound layer 103 in Embodiment 2.

[0065] The light-emitting device 130G has the same structure as that described in Embodiment 1. It includes a first electrode (pixel electrode) composed of a conductive layer 151G and a conductive layer 152G, an organic compound layer 103G on the first electrode, a common layer 104 on the organic compound layer 103G, and a second electrode (common electrode) 102 on the common layer. The common layer 104 may or may not be provided, but is preferably provided because it can reduce damage to the organic compound layer 103G during processing. When the common layer 104 is provided, it is preferably an electron injection layer. When the common layer 104 is provided, the stacked structure of the organic compound layer 103G and the common layer 104 corresponds to the organic compound layer 103 in Embodiment 2.

[0066] The light-emitting device 130B has the same configuration as that described in Embodiment 1. It includes a first electrode (pixel electrode) composed of a conductive layer 151B and a conductive layer 152B, an organic compound layer 103B on the first electrode, a common layer 104 on the organic compound layer 103B, and a second electrode (common electrode) 102 on the common layer. The common layer 104 may or may not be provided, but is preferably provided because it can reduce damage to the organic compound layer 103B during processing. When the common layer 104 is provided, it is preferably an electron injection layer. When the common layer 104 is provided, the stacked structure of the organic compound layer 103B and the common layer 104 corresponds to the organic compound layer 103 in Embodiment 2.

[0067] One of the pixel electrode and the common electrode of the light-emitting device functions as an anode and the other functions as a cathode. In the following description, unless otherwise specified, the pixel electrode functions as an anode and the common electrode functions as a cathode.

[0068] The organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B are independent island-shaped layers for each light-emitting device or for each emitted color. By providing the organic compound layer 103 in an island shape for each light-emitting device 130, leakage current between adjacent light-emitting devices 130 can be suppressed even in a high-resolution display device. This makes it possible to prevent crosstalk and realize a display device with extremely high contrast. In particular, a display device with high current efficiency at low brightness can be realized.

[0069] The island-shaped organic compound layer 103 is formed by depositing an EL film and processing the EL film using a lithography method.

[0070] In addition, in the display device of one embodiment of the present invention, the first electrode (pixel electrode) of the light-emitting device preferably has a stacked structure. For example, in the example shown in FIG. 2B , the first electrode of the light-emitting device 130 has a stacked structure of a conductive layer 151 and a conductive layer 152. For example, when the display device 100 is a top-emission type and the pixel electrode of the light-emitting device 130 functions as an anode, it is preferable that the conductive layer 151 has high reflectivity for visible light, and the conductive layer 152 has transparency to visible light and a high work function. When the display device 100 is a top-emission type, the higher the reflectivity of the pixel electrode for visible light, the higher the extraction efficiency of light emitted from the organic compound layer 103 can be. Furthermore, when the pixel electrode functions as an anode, the higher the work function of the pixel electrode, the easier it is to inject holes into the organic compound layer 103. As described above, by forming the pixel electrode of the light-emitting device 130 into a stacked structure of the conductive layer 151 having a high reflectivity for visible light and the conductive layer 152 having a high work function, the light-emitting device 130 can be made into a light-emitting device with high light extraction efficiency and low driving voltage.

[0071] When the conductive layer 151 is a layer having high reflectivity to visible light, the reflectivity of the conductive layer 151 to visible light is preferably, for example, 40% to 100%, or 70% to 100%. When the conductive layer 152 is an electrode that is transparent to visible light, the transmittance of the conductive layer 152 to visible light is preferably, for example, 40% or more.

[0072] Here, when the pixel electrode has a laminated structure made up of multiple layers, the pixel electrode may be altered due to, for example, a reaction between the multiple layers. For example, when a film formed after forming the pixel electrode is removed by a wet etching method, galvanic corrosion may occur when a chemical solution comes into contact with the pixel electrode.

[0073] Therefore, in the display device 100 of this embodiment, the insulating layer 156 is formed on the side surfaces of the conductive layer 151 and the conductive layer 152. This prevents a chemical solution from coming into contact with the conductive layer 151, even when a film formed after forming a pixel electrode having the conductive layer 151 and the conductive layer 152 is removed by wet etching, for example. Therefore, for example, galvanic corrosion of the pixel electrode can be prevented. Therefore, the display device 100 can be manufactured by a method with a high yield, and therefore can be a low-cost display device. Furthermore, since defects in the display device 100 can be prevented, the display device 100 can be a highly reliable display device.

[0074] For example, a metal material can be used as the conductive layer 151. Specifically, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), and neodymium (Nd), as well as alloys containing appropriate combinations of these metals, can also be used.

[0075] An oxide containing one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used for the conductive layer 152. For example, it is preferable to use a conductive oxide containing one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. In particular, indium tin oxide containing silicon has a large work function, for example, a work function of 4.0 eV or more, and therefore can be suitably used for the conductive layer 152.

[0076] The conductive layer 151 may have a stacked structure of multiple layers containing different materials, and the conductive layer 152 may have a stacked structure of multiple layers containing different materials. In this case, the conductive layer 151 may include a layer containing a material that can be used for the conductive layer 152, such as a conductive oxide, or the conductive layer 152 may include a layer containing a material that can be used for the conductive layer 151, such as a metal material. For example, when the conductive layer 151 has a stacked structure of two or more layers, a layer in contact with the conductive layer 152 can be a layer containing a material that can be used for the conductive layer 152.

[0077] Note that the end of the insulating layer 156 may have a tapered shape. Specifically, when the end of the insulating layer 156 has a tapered shape with a taper angle of less than 90°, coverage of structures provided along the side surfaces of the insulating layer 156 can be improved.

[0078] 3A illustrates a case where the conductive layer 151 has a stacked structure of multiple layers containing different materials. As shown in FIG. 3A, the conductive layer 151 has a structure including a conductive layer 151a, a conductive layer 151b on the conductive layer 151a, and a conductive layer 151c on the conductive layer 151b. That is, the conductive layer 151 shown in FIG. 3A has a three-layer stacked structure. In this way, when the conductive layer 151 has a stacked structure of multiple layers, the reflectivity of at least one layer constituting the conductive layer 151 to visible light may be made higher than the reflectivity of the conductive layer 152 to visible light.

[0079] 3A , the conductive layer 151b is sandwiched between the conductive layer 151a and the conductive layer 151c. The conductive layer 151a and the conductive layer 151c are preferably made of a material that is less susceptible to deterioration than the conductive layer 151b. For example, the conductive layer 151a can be made of a material that is less susceptible to migration due to contact with the insulating layer 175 than the conductive layer 151b. The conductive layer 151c can be made of a material that is less susceptible to oxidation than the conductive layer 151b and has an oxide with a lower electrical resistivity than the oxide of the material used for the conductive layer 151b.

[0080] As described above, by sandwiching the conductive layer 151b between the conductive layer 151a and the conductive layer 151c, the range of materials that can be selected for the conductive layer 151b can be expanded. This allows the conductive layer 151b to have a higher reflectivity for visible light than at least one of the conductive layer 151a and the conductive layer 151c. For example, aluminum can be used for the conductive layer 151b. Note that an alloy containing aluminum may also be used for the conductive layer 151b. Furthermore, titanium, which has a lower reflectivity for visible light than aluminum but is less likely to migrate than aluminum even when in contact with the insulating layer 175, can be used for the conductive layer 151a. Furthermore, titanium, which has a lower reflectivity for visible light than aluminum but is less likely to oxidize than aluminum and has an oxide with lower electrical resistivity than aluminum oxide, can be used for the conductive layer 151c.

[0081] Alternatively, silver or an alloy containing silver may be used for the conductive layer 151c. Silver has a higher reflectivity for visible light than titanium. Furthermore, silver is less susceptible to oxidation than aluminum, and the electrical resistivity of silver oxide is lower than that of aluminum oxide. Therefore, using silver or an alloy containing silver for the conductive layer 151c can favorably increase the reflectivity of the conductive layer 151 for visible light while suppressing an increase in the electrical resistance of the pixel electrode due to oxidation of the conductive layer 151b. Here, an alloy containing silver may be, for example, an alloy of silver, palladium, and copper (Ag-Pd-Cu, also referred to as APC). Note that using silver or an alloy containing silver for the conductive layer 151c and aluminum for the conductive layer 151b can increase the reflectivity of the conductive layer 151c for visible light compared to the reflectivity of the conductive layer 151b for visible light. Here, silver or an alloy containing silver may be used for the conductive layer 151b. Alternatively, the conductive layer 151a may be made of silver or an alloy containing silver.

[0082] On the other hand, a film using titanium has better etching processability than a film using silver. Therefore, by using titanium for the conductive layer 151c, the conductive layer 151c can be easily formed. Note that a film using aluminum also has better etching processability than a film using silver.

[0083] As described above, by forming the conductive layer 151 with a stacked structure of a plurality of layers, the characteristics of the display device can be improved. For example, the display device 100 can have high light extraction efficiency and high reliability.

[0084] Here, when a microcavity structure is applied to the light-emitting device 130, the light extraction efficiency of the display device 100 can be suitably improved by using silver, which is a material with high reflectivity for visible light, or an alloy containing silver as the conductive layer 151c.

[0085] As described above, the side surfaces of the conductive layer 151 preferably have a tapered shape. Specifically, the side surfaces of the conductive layer 151 preferably have a tapered shape with a taper angle of less than 90°. For example, in the conductive layer 151 having the structure shown in FIG. 3A , it is preferable that at least one of the side surfaces of the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c has a tapered shape.

[0086] The conductive layer 151 shown in FIG. 3A can be formed by lithography. Specifically, first, a conductive film to become the conductive layer 151a, a conductive film to become the conductive layer 151b, and a conductive film to become the conductive layer 151c are formed in this order. Next, a resist mask is formed on the conductive film to become the conductive layer 151c. After that, the conductive film in a region that does not overlap with the resist mask is removed by, for example, etching. Here, compared to when the conductive layer 151 is formed so that the side surfaces are not tapered, that is, so that the side surfaces are vertical, the side surfaces of the conductive layer 151 can be tapered by processing the conductive film under conditions that make it easier for the resist mask to recede (shrink).

[0087] Here, if the conductive film is processed under conditions that make it easy for the resist mask to recede (shrink), the conductive film may be easily processed in the horizontal direction, which may result in higher isotropy of etching than when the conductive layer 151 is formed so that the side surfaces are vertical.

[0088] Furthermore, when the conductive layer 151 has a stacked structure of multiple layers made of different materials, the layers may differ in ease of processing in the horizontal direction. For example, the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c may differ in ease of processing in the horizontal direction.

[0089] In this case, after processing the conductive film, the side surface of conductive layer 151b may be located inside the side surfaces of conductive layers 151a and 151c, forming a protrusion, as shown in Fig. 3A. This may reduce the coverage of conductive layer 152 with respect to conductive layer 151, and may cause discontinuities in conductive layer 152.

[0090] Therefore, it is preferable to provide an insulating layer 156 as shown in Fig. 3A. Fig. 3A shows an example in which the insulating layer 156 is provided over the conductive layer 151a so as to have a region overlapping with the side surface of the conductive layer 151b. This can prevent the conductive layer 152 from being broken or thinned due to the protrusion, thereby suppressing poor connection or an increase in driving voltage.

[0091] 3A illustrates a structure in which the side surfaces of the conductive layer 151b are entirely covered with the insulating layer 156, but a portion of the side surfaces of the conductive layer 151b may not be covered with the insulating layer 156. Similarly, in pixel electrodes having structures to be described later, a portion of the side surfaces of the conductive layer 151b may not be covered with the insulating layer 156.

[0092] When the conductive layer 151 has the structure shown in FIG. 3A , the conductive layer 152 is provided to cover the conductive layers 151a, 151b, 151c, and the insulating layer 156 and to be electrically connected to the conductive layers 151a, 151b, and 151c. This prevents a chemical solution from contacting any of the conductive layers 151a, 151b, and 151c, even when a film formed after the formation of the conductive layer 152 is removed by wet etching. This prevents corrosion from occurring in any of the conductive layers 151a, 151b, and 151c. Therefore, the display device 100 can be manufactured with a high yield. Furthermore, the occurrence of defects is suppressed, and the display device 100 can be a highly reliable display device.

[0093] Here, as shown in FIG. 3A , it is preferable that the insulating layer 156 has a curved surface. This can suppress the occurrence of discontinuities in the conductive layer 152 covering the insulating layer 156, compared to when the side surfaces of the insulating layer 156 are vertical (parallel to the Z direction). Furthermore, even when the insulating layer 156 has a tapered shape on the side surface, specifically a tapered shape with a taper angle of less than 90°, it can suppress the occurrence of discontinuities in the conductive layer 152 covering the insulating layer 156, compared to when the side surfaces of the insulating layer 156 are vertical. As described above, the display device 100 can be manufactured using a method with a high yield. Furthermore, the occurrence of defects is suppressed, and the display device 100 can be a highly reliable display device.

[0094] 3A illustrates a structure in which the side surface of the conductive layer 151b is located inside the side surfaces of the conductive layer 151a and the conductive layer 151c, but this is not a limitation of one embodiment of the present invention. For example, the side surface of the conductive layer 151b may be located outside the side surface of the conductive layer 151a. Alternatively, the side surface of the conductive layer 151b may be located outside the side surface of the conductive layer 151c.

[0095] 3B to 3D show other structures of the first electrode 101. Fig. 3B shows a structure in which the insulating layer 156 covers not only the side surface of the conductive layer 151b but also the side surfaces of the conductive layers 151a, 151b, and 151c in the first electrode 101 of Fig. 3A.

[0096] FIG. 3C shows a configuration in which the insulating layer 156 is not provided in the first electrode 101 of FIG. 3A.

[0097] FIG. 3D shows a structure in which the conductive layer 151 does not have a layered structure and the conductive layer 152 has a layered structure in the first electrode 101 of FIG. 3A.

[0098] The conductive layer 152a has higher adhesion to the conductive layer 152b than the insulating layer 175, for example. The conductive layer 152a can be formed using an oxide containing one or more of indium, tin, zinc, gallium, titanium, aluminum, and silicon. For example, it is preferable to use a conductive oxide containing one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium titanium oxide, zinc titanate, aluminum zinc oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. This can prevent peeling of the conductive layer 152b. Furthermore, the conductive layer 152b can be configured not to be in contact with the insulating layer 175.

[0099] The conductive layer 152b has a higher reflectivity for visible light (for example, reflectivity for light with a predetermined wavelength in the range of 400 nm to 750 nm) than the conductive layer 151, the conductive layer 152a, and the conductive layer 152c. The reflectivity for visible light of the conductive layer 152b can be, for example, 70% to 100%, preferably 80% to 100%, and more preferably 90% to 100%. Furthermore, a material having a higher reflectivity for visible light than aluminum can be used for the conductive layer 152b. Specifically, the conductive layer 152b can be made of, for example, silver or an alloy containing silver. An example of an alloy containing silver is an alloy of silver, palladium, and copper (APC). As a result, the display device 100 can have high light extraction efficiency. Note that a metal other than silver may be used for the conductive layer 152b.

[0100] When the conductive layer 151 and the conductive layer 152 function as anodes, the conductive layer 152c preferably has a high work function. The conductive layer 152c has a work function higher than that of the conductive layer 152b, for example. The conductive layer 152c can be made of the same material as that of the conductive layer 152a. For example, the conductive layer 152a and the conductive layer 152c can be made of the same material. For example, when indium tin oxide is used for the conductive layer 152a, indium tin oxide can also be used for the conductive layer 152c.

[0101] Note that when the conductive layers 151 and 152 function as cathodes, they preferably have a small work function. For example, the conductive layer 152c has a work function smaller than that of the conductive layer 152b.

[0102] The conductive layer 152c is preferably a layer having high transmittance to visible light (for example, transmittance to light with a predetermined wavelength in the range of 400 nm to 750 nm). For example, the transmittance of the conductive layer 152c to visible light is preferably higher than that of the conductive layer 151 and the conductive layer 152b. For example, the transmittance of the conductive layer 152c to visible light can be 60% to 100%, preferably 70% to 100%, and more preferably 80% to 100%. As a result, the amount of light emitted from the organic compound layer 103 that is absorbed by the conductive layer 152c can be reduced. As described above, the conductive layer 152b below the conductive layer 152c can be a layer having high reflectance to visible light. Therefore, the display device 100 can have high light extraction efficiency.

[0103] 2A , an example of a manufacturing method for the display device 100 will be described with reference to FIGS. 4A to 9C . The light-emitting device included in the display device 100 has an organic layer formed by a manufacturing process including a treatment using water. By using the organic compound of one embodiment of the present invention for the organic layer of the light-emitting device included in the display device of one embodiment of the present invention, even when the display device is manufactured by a manufacturing method including a treatment using water, problems such as dissolution of the layer including the organic compound and penetration of a chemical solution into the layer using the organic compound can be prevented, and a light-emitting device with excellent characteristics can be provided.

[0104] <<Example of a Method for Producing a Light-Emitting Device>> Thin films (insulating films, semiconductor films, conductive films, etc.) constituting a display device can be formed using a sputtering method, a chemical vapor deposition (CVD) method, a vacuum evaporation method, a pulsed laser deposition (PLD) method, an ALD method, etc. CVD methods include a plasma enhanced chemical vapor deposition (PECVD) method and a thermal CVD method. Furthermore, one type of thermal CVD method is a metal organic chemical vapor deposition (MOCVD) method.

[0105] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed by wet film formation methods such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0106] In particular, vacuum processes such as vapor deposition, and solution processes such as spin coating and inkjet printing can be used to fabricate light-emitting devices. Vapor deposition methods include physical vapor deposition (PVD) methods such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, and chemical vapor deposition (CVD). In particular, functional layers (hole injection layer, hole transport layer, hole blocking layer, light-emitting layer, electron blocking layer, electron transport layer, electron injection layer, etc.) included in the organic compound layer can be formed by vapor deposition (vacuum deposition, etc.), coating methods (dip coating, die coating, bar coating, spin coating, spray coating, etc.), printing methods (inkjet printing, screen (stencil printing), offset (lithographic printing), flexography (relief printing), gravure, microcontact printing, etc.), etc.

[0107] Furthermore, when processing the thin film that constitutes the display device, it can be processed using, for example, a lithography method. Alternatively, the thin film may be processed using a nanoimprint method, a sandblasting method, a lift-off method, etc. Furthermore, the island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.

[0108] As a lithography method, for example, photolithography can be used. There are two typical photolithography methods: one is a method in which a resist mask is formed on a thin film to be processed, the thin film is processed by, for example, etching, and then the resist mask is removed; and the other is a method in which a photosensitive thin film is formed, and then the thin film is exposed to light and developed to be processed into a desired shape.

[0109] In photolithography, the light used for exposure may be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light, ArF laser light, etc. Exposure may also be performed by immersion exposure technology. Extreme ultraviolet (EUV) light or X-rays may also be used as the light used for exposure. An electron beam may also be used instead of the light used for exposure. Extreme ultraviolet light, X-rays, or an electron beam are preferred because they enable extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, a photomask is not required.

[0110] The thin film can be etched by dry etching, wet etching, sandblasting, or the like.

[0111] 4A , an insulating layer 171 is formed on a substrate (not shown). Subsequently, conductive layers 172 and 179 are formed on the insulating layer 171, and an insulating layer 173 is formed on the insulating layer 171 so as to cover the conductive layers 172 and 179. Subsequently, an insulating layer 174 is formed on the insulating layer 173, and an insulating layer 175 is formed on the insulating layer 174.

[0112] The substrate may be a substrate having heat resistance sufficient to withstand at least a subsequent heat treatment. When an insulating substrate is used, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like may be used. Furthermore, a semiconductor substrate such as a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or an SOI substrate may be used.

[0113] 4A, openings are formed in the insulating layers 175, 174, and 173, reaching the conductive layer 172. Then, plugs 176 are formed to fill the openings.

[0114] 4A , a conductive film 151f, which will later become the conductive layers 151R, 151G, 151B, and 151C, is formed on the plug 176 and the insulating layer 175. The conductive film 151f can be formed by, for example, sputtering or vacuum deposition. The conductive film 151f can be made of, for example, a metal material.

[0115] 4A , a conductive film 152f, which will later become the conductive layers 152R, 152G, 152B, and 152C, is formed over the conductive film 151f. The conductive film 152f can be formed by, for example, sputtering or vacuum evaporation. Alternatively, the conductive film 152f can be formed using, for example, a conductive oxide. Alternatively, the conductive film 152f can have a stacked structure of a film using a metal material and a film using a conductive oxide on the metal material. For example, the conductive film 152f can have a stacked structure of a film using titanium, silver, or an alloy containing silver and a film using a conductive oxide on the metal material.

[0116] The conductive film 152f can be formed by an ALD method. In this case, an oxide containing one or more elements selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used as the conductive film 152f. In this case, the conductive film 152f can be formed by repeating a cycle consisting of introducing a precursor (which may be generally referred to as a precursor or a metal precursor), purging the precursor, introducing an oxidizing agent (which may be generally referred to as a reactant, a non-metal precursor, or the like), and purging the oxidizing agent. When an oxide film containing multiple metals, such as indium tin oxide, is formed as the conductive film 152f, the metal composition can be controlled by varying the number of cycles for each type of precursor.

[0117] For example, when forming an indium tin oxide film as the conductive film 152f, an indium-containing precursor is introduced, the precursor is purged, an oxidizing agent is introduced, and an In—O film is formed. Next, a tin-containing precursor is introduced, the precursor is purged, and an oxidizing agent is introduced, and an Sn—O film is formed. Here, by making the number of cycles for forming the In—O film larger than the number of cycles for forming the Sn—O film, the number of In atoms contained in the conductive film 152f can be made larger than the number of Sn atoms.

[0118] Furthermore, for example, when a zinc oxide film is formed as the conductive film 152f, a Zn—O film is formed using the above procedure. For example, when an aluminum zinc oxide film is formed as the conductive film 152f, a Zn—O film and an Al—O film are formed using the above procedure. For example, when a titanium oxide film is formed as the conductive film 152f, a Ti—O film is formed using the above procedure. For example, when an indium tin oxide film containing silicon is formed as the conductive film 152f, an In—O film, an Sn—O film, and an Si—O film are formed using the above procedure. For example, when a zinc oxide film containing gallium is formed, a Ga—O film and a Zn—O film are formed using the above procedure.

[0119] Examples of indium-containing precursors include triethylindium, trimethylindium, and [1,1,1-trimethyl-N-(trimethylsilyl)amido]-indium. Examples of tin-containing precursors include tin chloride and tetrakis(dimethylamido)tin. Examples of zinc-containing precursors include diethylzinc and dimethylzinc. Examples of gallium-containing precursors include triethylgallium. Examples of titanium-containing precursors include titanium chloride, tetrakis(dimethylamido)titanium, and tetraisopropyl titanate. Examples of aluminum-containing precursors include aluminum chloride and trimethylaluminum. Examples of silicon-containing precursors include trisilylamine, bis(diethylamino)silane, tris(dimethylamino)silane, bis(tert-butylamino)silane, and bis(ethylmethylamino)silane. Examples of oxidizing agents include water vapor, oxygen plasma, and ozone gas.

[0120] 4A, a resist mask 191 is formed over the conductive film 151f and the conductive film 152f. The resist mask 191 can be formed by applying a photosensitive material (photoresist) and then performing exposure and development.

[0121] 4B , for example, the conductive films 151f and 152f in regions that do not overlap with the resist mask 191 are removed by, for example, etching, specifically, dry etching, to form a pixel electrode including the conductive layer 151 and the conductive layer 152. Note that if the conductive film 151f includes a layer using a conductive oxide such as indium tin oxide, the layer may be removed by wet etching. As a result, the conductive layer 151 and the conductive layer 152 are formed. Note that, for example, when a portion of the conductive film 151f is removed by dry etching, a recess may be formed in a region of the insulating layer 175 that does not overlap with the conductive layer 151.

[0122] Note that the conductive film 152f may be processed by lithography to form the conductive layers 152R, 152G, 152B, and 152C, and then the conductive film 151f may be processed using the conductive layers 152R, 152G, 152B, and 152C as masks. Specifically, for example, after forming a resist mask, part of the conductive film 152f is removed by etching. The conductive film 152f can be removed by, for example, wet etching. The conductive film 152f may also be removed by dry etching. Then, the conductive film 151f may be removed by wet etching.

[0123] Here, it is preferable to perform hydrophobic treatment on the conductive layer 152. The hydrophobic treatment can change the surface to be treated from hydrophilic to hydrophobic, or can increase the hydrophobicity of the surface to be treated. By performing the hydrophobic treatment on the conductive layer 152, adhesion between the conductive layer 152 and the organic compound layer 103 formed in a later step can be increased, and film peeling can be suppressed. Note that the hydrophobic treatment is not necessarily performed.

[0124] 4C, the resist mask 191 is removed. The resist mask 191 can be removed by ashing using oxygen plasma, or by ashing using oxygen gas and CF ４ , C ４ F ８ , S.F. ６ , CHF ３ , Cl ２ , H ２ O, BCl ３ Alternatively, a Group 18 element such as He may be used. Alternatively, the resist mask 191 may be removed by wet etching.

[0125] 4D , an insulating film 156f, which will later become insulating layers 156R, 156G, 156B, and 156C, is formed on the conductive layers 151R and 152R, 151G and 152G, 151B and 152B, 151C and 152C, and on the insulating layer 175. The insulating film 156f can be formed by, for example, CVD, ALD, sputtering, or vacuum deposition.

[0126] The insulating film 156f can be formed using an inorganic material. For example, the insulating film 156f can be formed using an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film. For example, the insulating film 156f can be formed using an oxide insulating film containing silicon, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film. For example, the insulating film 156f can be formed using silicon oxynitride.

[0127] 4E, the insulating film 156f is processed to form insulating layers 156R, 156G, 156B, and 156C. For example, the insulating layer 156 can be formed by uniformly etching the upper surface of the insulating film 156f. Such uniform etching and planarization is also called an etch-back process. The insulating layer 156 may also be formed using lithography.

[0128] Next, as shown in FIG. 5A, an organic compound film 103Rf, which will later become the organic compound layer 103R, is formed on the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, and the insulating layer 175.

[0129] 5A, the organic compound film 103Rf is not formed on the conductive layer 152C. For example, by using a mask for defining the film formation area (also called an area mask or a rough metal mask to distinguish it from a fine metal mask), the organic compound film 103Rf can be formed only in the desired region. By employing a film formation process using an area mask and a processing process using a resist mask, the light-emitting device can be manufactured through a relatively simple process.

[0130] The organic compound film 103Rf can be formed by, for example, a vapor deposition method, specifically a vacuum deposition method. Alternatively, the organic compound film 103Rf may be formed by a transfer method, a printing method, an inkjet method, a coating method, or the like.

[0131] Subsequently, as shown in FIG. 5A, a sacrificial film 158Rf, which will later become the sacrificial layer 158R, and a mask film 159Rf, which will later become the mask layer 159R, are formed in this order on the organic compound film 103Rf, the conductive layer 152C, and the insulating layer 175.

[0132] In this embodiment, an example is shown in which the mask film is formed with a two-layer structure of the sacrificial film 158Rf and the mask film 159Rf, but the mask film may have a single-layer structure or a laminated structure of three or more layers.

[0133] By providing a sacrificial layer on the organic compound film 103Rf, damage to the organic compound film 103Rf during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.

[0134] The sacrificial film 158Rf is made of a film that is highly resistant to the processing conditions of the organic compound film 103Rf, specifically, a film that has a large etching selectivity with respect to the organic compound film 103Rf.The mask film 159Rf is made of a film that has a large etching selectivity with respect to the sacrificial film 158Rf.

[0135] The sacrificial film 158Rf and the mask film 159Rf are formed at a temperature lower than the heat-resistant temperature of the organic compound film 103Rf. The substrate temperature when forming the sacrificial film 158Rf and the mask film 159Rf is typically 200° C. or lower, preferably 150° C. or lower, more preferably 120° C. or lower, more preferably 100° C. or lower, and even more preferably 80° C. or lower.

[0136] The sacrificial film 158Rf and the mask film 159Rf are preferably made of films that can be removed by wet etching, which can reduce damage to the organic compound film 103Rf when processing the sacrificial film 158Rf and the mask film 159Rf compared to when dry etching is used.

[0137] The sacrificial film 158Rf and the mask film 159Rf can be formed by, for example, sputtering, ALD (thermal ALD, PEALD), CVD, or vacuum deposition. Alternatively, they may be formed by the wet film formation method described above.

[0138] The sacrificial film 158Rf formed on and in contact with the organic compound film 103Rf is preferably formed using a formation method that causes less damage to the organic compound film 103Rf than the mask film 159Rf. For example, the sacrificial film 158Rf is preferably formed using the ALD method or the vacuum deposition method, and the mask film 159Rf is preferably formed using the sputtering method, which has a relatively high film formation speed.

[0139] The sacrificial film 158Rf and the mask film 159Rf may each be made of one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, an inorganic insulating film, or the like.

[0140] In particular, it is preferable that the sacrificial film 158Rf be made of aluminum oxide, which is a low melting point material.

[0141] The mask film 159Rf may be made of a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, or tantalum, or an alloy material containing such a metal material. In particular, it is preferable to use a low-melting-point material such as molybdenum (Mo) or silver.

[0142] Furthermore, using a metal material capable of blocking ultraviolet rays for one or both of the mask films 158Rf and 159Rf is preferable because it can prevent ultraviolet rays from being irradiated onto the organic compound film 103Rf and suppress deterioration of the organic compound film 103Rf. For example, using a film containing a material that blocks ultraviolet rays for the mask film can prevent ultraviolet rays from being irradiated onto the organic compound layer during the exposure process. Suppressing damage to the organic compound layer by ultraviolet rays can improve the reliability of the light-emitting device.

[0143] As the material for blocking ultraviolet light, various materials can be used, such as metals, insulators, semiconductors, and semi-metals that have light-shielding properties against ultraviolet light. However, since part or all of the mask film will be removed in a later step, it is preferable that the film be one that can be processed by etching, and it is particularly preferable that the film have good processability.

[0144] Furthermore, the mask film 159Rf may be made of a metal oxide such as In—Ga—Zn oxide, indium oxide, In—Zn oxide, In—Sn oxide, indium titanium oxide (In—Ti oxide), indium tin zinc oxide (In—Sn—Zn oxide), indium titanium zinc oxide (In—Ti—Zn oxide), indium gallium tin zinc oxide (In—Ga—Sn—Zn oxide), or indium tin oxide containing silicon.

[0145] In addition, instead of the above gallium, an element M (M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) may be used.

[0146] As the mask film, for example, semiconductor materials such as silicon or germanium are preferred because they have a high affinity with the semiconductor manufacturing process. Alternatively, oxides or nitrides of the above semiconductor materials can be used. Alternatively, non-metallic materials such as carbon or their compounds can be used. Alternatively, metals such as titanium, tantalum, tungsten, chromium, and aluminum, or alloys containing one or more of these, can be used. Alternatively, oxides containing the above metals such as titanium oxide or chromium oxide, or nitrides such as titanium nitride, chromium nitride, or tantalum nitride can be used.

[0147] For example, the sacrificial film 158Rf can be an inorganic insulating film (e.g., an aluminum oxide film) formed using the ALD method, and the mask film 159Rf can be an inorganic film (e.g., an In—Ga—Zn oxide film, an aluminum film, or a tungsten film) formed using the sputtering method.

[0148] Alternatively, an organic material may be used for one or both of the mask films 158Rf and 159Rf. For example, the organic material may be a material that is soluble in a solvent that is chemically stable with respect to at least the film located at the top of the organic compound film 103Rf. Materials that dissolve in water or alcohol are particularly suitable. When forming a film of such a material, it is preferable to apply the material dissolved in a solvent such as water or alcohol by a wet film formation method, and then perform a heat treatment to evaporate the solvent. In this case, performing the heat treatment under a reduced pressure atmosphere is preferable because it allows the solvent to be removed at a low temperature and in a short time, thereby reducing thermal damage to the organic compound film 103Rf.

[0149] The mask film 159Rf may be made of an organic resin such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, alcohol-soluble polyamide resin, or a fluororesin such as a perfluoropolymer.

[0150] 5A, a resist mask 190R is formed on the mask film 159Rf. The resist mask 190R can be formed by applying a photosensitive material (photoresist) and then performing exposure and development.

[0151] The resist mask 190R may be made of either a positive resist material or a negative resist material.

[0152] The resist mask 190R is provided in a position overlapping with the conductive layer 152R. The resist mask 190R is preferably also provided in a position overlapping with the conductive layer 152C. This can prevent the conductive layer 152C from being damaged during the manufacturing process of the display device. Note that the resist mask 190R does not necessarily have to be provided on the conductive layer 152C. Furthermore, as shown in the cross-sectional view between B1 and B2 in FIG. 5A , the resist mask 190R is preferably provided so as to cover from the end of the organic compound film 103Rf to the end of the conductive layer 152C (the end on the organic compound film 103Rf side).

[0153] 5B , a resist mask 190R is used to remove a portion of the mask film 159Rf to form a mask layer 159R. The mask layer 159R remains on the conductive layer 152R and the conductive layer 152C. The resist mask 190R is then removed. The mask layer 159R is used as a mask (also referred to as a hard mask) to remove a portion of the sacrificial film 158Rf to form a sacrificial layer 158R.

[0154] The sacrificial film 158Rf and the mask film 159Rf can be processed by wet etching or dry etching, respectively, and are preferably processed by isotropic etching.

[0155] By using the wet etching method, damage to the organic compound film 103Rf during processing of the sacrificial film 158Rf and the mask film 159Rf can be reduced compared to when using the dry etching method. When using the wet etching method, it is preferable to use a chemical solution using, for example, a developer, a tetramethylammonium hydroxide aqueous solution (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof.

[0156] In processing the mask film 159Rf, the organic compound film 103Rf is not exposed, and therefore the range of processing method options is wider than in processing the sacrificial film 158Rf. Specifically, even when a gas containing oxygen is used as an etching gas in processing the mask film 159Rf, deterioration of the organic compound film 103Rf can be further suppressed.

[0157] Furthermore, when dry etching is used to process the sacrificial film 158Rf, deterioration of the organic compound film 103Rf can be suppressed by not using a gas containing oxygen as the etching gas. ４ , C ４ F ８ , S.F. ６ , CHF ３ , Cl ２ , H ２ O, BCl ３ It is preferable to use a gas containing a Group 18 element such as He or the like as the etching gas.

[0158] For example, when an aluminum oxide film formed by the ALD method is used as the sacrificial film 158Rf, CHF ３ and He or CHF ３ and He and CH ４ In addition, when an In—Ga—Zn oxide film formed by sputtering is used as the mask film 159Rf, the mask film 159Rf can be partially removed by wet etching using diluted phosphoric acid. ４ A part of the mask film 159Rf may be removed by dry etching using Ar. Alternatively, a part of the mask film 159Rf may be removed by wet etching using diluted phosphoric acid. In addition, when a tungsten film formed by sputtering is used as the mask film 159Rf, SF ６ , C.F. ４ and O ２ , or CF ４ and Cl ２ and O ２ Using this, a part of the mask film 159Rf can be removed by dry etching.

[0159] The resist mask 190R can be removed in the same manner as the resist mask 191. For example, it can be removed by ashing using oxygen plasma. Alternatively, it can be removed by ashing using oxygen gas and CF ４ , C ４ F ８ , S.F. ６ , CHF ３ , Cl ２ , H ２ O, BCl ３ Alternatively, a Group 18 element such as He or the like may be used. Alternatively, the resist mask 190R may be removed by wet etching. At this time, the sacrificial film 158Rf is located on the outermost surface and the organic compound film 103Rf is not exposed, so that damage to the organic compound film 103Rf can be suppressed in the process of removing the resist mask 190R. Furthermore, the range of options for removing the resist mask 190R can be expanded.

[0160] 5B, the organic compound film 103Rf is processed to form the organic compound layer 103R. For example, the mask layer 159R and the sacrificial layer 158R are used as a hard mask to remove a portion of the organic compound film 103Rf, thereby forming the organic compound layer 103R.

[0161] 5B, a laminated structure of the organic compound layer 103R, the sacrificial layer 158R, and the mask layer 159R remains on the conductive layer 152R, and the conductive layers 152G and 152B are exposed.

[0162] 5B shows an example in which the edge of the organic compound layer 103R is located inside the edge of the conductive layer 152R. This configuration enables miniaturization of pixels, enabling the creation of a high-resolution display. Although not shown in FIG. 5B , the etching process may form a recess in a region of the insulating layer 175 that does not overlap with the organic compound layer 103R.

[0163] As described above, the resist mask 190R is preferably provided to cover the area between the dashed-dotted lines B1-B2 from the end of the organic compound layer 103R to the end of the conductive layer 152C (the end on the organic compound layer 103R side). As a result, as shown in FIG. 5B , the sacrificial layer 158R and the mask layer 159R are provided to cover the area between the dashed-dotted lines B1-B2 from the end of the organic compound layer 103R to the end of the conductive layer 152C (the end on the organic compound layer 103R side). This prevents, for example, the insulating layer 175 from being exposed between the dashed-dotted lines B1-B2. This prevents portions of the insulating layers 175, 174, and 173 from being removed by etching or the like, thereby preventing the conductive layer 179 from being exposed. This prevents the conductive layer 179 from being unintentionally electrically connected to other conductive layers. For example, this prevents a short circuit between the conductive layer 179 and the common electrode 102, which will be formed in a later process.

[0164] The organic compound film 103Rf is preferably processed by anisotropic etching, particularly anisotropic dry etching, or wet etching may be used.

[0165] When dry etching is used, deterioration of the organic compound film 103Rf can be suppressed by not using a gas containing oxygen as the etching gas.

[0166] Alternatively, a gas containing oxygen may be used as the etching gas. By using an etching gas containing oxygen, the etching rate can be increased. Therefore, etching can be performed under low power conditions while maintaining a sufficiently high etching rate. This makes it possible to suppress damage to the organic compound film 103Rf. Furthermore, problems such as adhesion of reaction products generated during etching can be suppressed.

[0167] When dry etching is used, for example, H ２ , C.F. ４ , C ４ F ８ , S.F. ６ , CHF ３ , Cl ２ , H ２ O, BCl ３ It is preferable to use a gas containing one or more of Group 18 elements such as He, Ar, etc. as the etching gas. Alternatively, it is preferable to use a gas containing one or more of these elements and oxygen as the etching gas. Alternatively, oxygen gas may be used as the etching gas. Specifically, for example, H ２ and a gas containing Ar, or CF ４ A gas containing CF and He can be used as an etching gas. ４ A gas containing He and oxygen can be used as the etching gas. ２ A gas containing Ar and a gas containing oxygen can be used as the etching gas.

[0168] As described above, in one embodiment of the present invention, the resist mask 190R is formed over the mask film 159Rf, and part of the mask film 159Rf is removed using the resist mask 190R to form the mask layer 159R. Then, part of the organic compound film 103Rf is removed using the mask layer 159R as a hard mask to form the organic compound layer 103R. Therefore, it can be said that the organic compound layer 103R is formed by processing the organic compound film 103Rf using a lithography method. Note that part of the organic compound film 103Rf may be removed using the resist mask 190R. Then, the resist mask 190R may be removed.

[0169] Next, it is preferable to perform, for example, a hydrophobic treatment on the conductive layer 152G. During processing of the organic compound film 103Rf, for example, the surface state of the conductive layer 152G may change to a hydrophilic state. For example, by performing the hydrophobic treatment on the conductive layer 152G, it is possible to improve the adhesion between the conductive layer 152G and a layer (here, the organic compound layer 103G) formed in a later process, and to suppress film peeling. Note that the hydrophobic treatment is not necessarily required.

[0170] Next, as shown in FIG. 6A, an organic compound film 103Gf, which will later become the organic compound layer 103G, is formed on the conductive layer 152G, the conductive layer 152B, the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, the mask layer 159R, and the insulating layer 175.

[0171] The organic compound film 103Gf can be formed by the same method as that used to form the organic compound film 103Rf, and can have the same structure as the organic compound film 103Rf.

[0172] 6A , a sacrificial film 158Gf, which will later become the sacrificial layer 158G, and a mask film 159Gf, which will later become the mask layer 159G, are sequentially formed on the organic compound film 103Gf and the mask layer 159R. A resist mask 190G is then formed. The materials and formation methods for the sacrificial film 158Gf and the mask film 159Gf are the same as those applicable to the sacrificial film 158Rf and the mask film 159Rf. The materials and formation methods for the resist mask 190G are the same as those applicable to the resist mask 190R.

[0173] The resist mask 190G is provided in a position overlapping with the conductive layer 152G.

[0174] 6B, a resist mask 190G is used to remove a portion of the mask film 159Gf to form a mask layer 159G. The mask layer 159G remains on the conductive layer 152G. The resist mask 190G is then removed. The mask layer 159G is then used as a mask to remove a portion of the sacrificial film 158Gf to form a sacrificial layer 158G. The organic compound film 103Gf is then processed to form the organic compound layer 103G. For example, the mask layer 159G and the sacrificial layer 158G are used as hard masks to remove a portion of the organic compound film 103Gf to form the organic compound layer 103G.

[0175] 6B, a laminated structure of the organic compound layer 103G, the sacrificial layer 158G, and the mask layer 159G remains on the conductive layer 152G, and the mask layer 159R and the conductive layer 152B are exposed.

[0176] Next, it is preferable to perform, for example, a hydrophobic treatment on the conductive layer 152B. During processing of the organic compound film 103Gf, for example, the surface state of the conductive layer 152B may change to a hydrophilic state. For example, by performing the hydrophobic treatment on the conductive layer 152B, it is possible to increase the adhesion between the conductive layer 152B and a layer (here, the organic compound layer 103B) formed in a later process, and to suppress film peeling. Note that the hydrophobic treatment is not necessarily required.

[0177] Next, as shown in FIG. 6C , an organic compound film 103Bf, which will later become the organic compound layer 103B, is formed on the conductive layer 152B, the mask layer 159R, the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, the mask layer 159G, and the insulating layer 175.

[0178] The organic compound film 103Bf can be formed by the same method as that used to form the organic compound film 103Rf, and can have the same structure as the organic compound film 103Rf.

[0179] 6C , a sacrificial film 158Bf, which will later become the sacrificial layer 158B, and a mask film 159Bf, which will later become the mask layer 159B, are sequentially formed on the organic compound film 103Bf and the mask layer 159R. A resist mask 190B is then formed. The materials and formation methods for the sacrificial film 158Bf and the mask film 159Bf are the same as those applicable to the sacrificial film 158Rf and the mask film 159Rf. The materials and formation methods for the resist mask 190B are the same as those applicable to the resist mask 190R.

[0180] The resist mask 190B is provided in a position overlapping with the conductive layer 152B.

[0181] 6D, a resist mask 190B is used to remove a portion of the mask film 159Bf to form a mask layer 159B. The mask layer 159B remains on the conductive layer 152B. The resist mask 190B is then removed. The mask layer 159B is then used as a mask to remove a portion of the sacrificial film 158Bf to form a sacrificial layer 158B. The organic compound film 103Bf is then processed to form the organic compound layer 103B. For example, the mask layer 159B and the sacrificial layer 158B are used as hard masks to remove a portion of the organic compound film 103Bf to form the organic compound layer 103B.

[0182] 6D, a laminated structure of the organic compound layer 103B, the sacrificial layer 158B, and the mask layer 159B remains on the conductive layer 152B, and the mask layers 159R and 159G are exposed.

[0183] It is preferable that the side surfaces of the organic compound layers 103R, 103G, and 103B are perpendicular or substantially perpendicular to the surface on which they are formed. For example, it is preferable that the angle formed between the surface on which they are formed and these side surfaces be 60 degrees or more and 90 degrees or less.

[0184] As described above, the distance between adjacent pairs of the organic compound layers 103R, 103G, and 103B formed using lithography can be narrowed to 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. Here, the distance can be defined, for example, as the distance between the opposing ends of adjacent pairs of the organic compound layers 103R, 103G, and 103B. By narrowing the distance between the island-shaped organic compound layers in this manner, a display device with high definition and a large aperture ratio can be provided. Furthermore, the distance between the first electrodes of adjacent light-emitting devices can also be narrowed, for example, to 10 μm or less, 8 μm or less, 5 μm or less, 3 μm or less, or 2 μm or less. It is preferable that the distance between the first electrodes of adjacent light-emitting devices be 2 μm or more and 5 μm or less.

[0185] 7A , it is preferable to remove mask layers 159R, 159G, and 159B. Depending on the subsequent process, sacrificial layers 158R, 158G, 158B, mask layers 159R, 159G, and 159B may remain on the display device. By removing mask layers 159R, 159G, and 159B at this stage, it is possible to prevent mask layers 159R, 159G, and 159B from remaining on the display device. For example, if a conductive material is used for mask layers 159R, 159G, and 159B, removing mask layers 159R, 159G, and 159B in advance can prevent leakage current and capacitance from remaining mask layers 159R, 159G, and 159B.

[0186] Although the present embodiment will be described taking as an example a case where the mask layers 159R, 159G, and 159B are removed, it is not necessary to remove the mask layers 159R, 159G, and 159B. For example, if the mask layers 159R, 159G, and 159B contain the aforementioned material that has a light-blocking property against ultraviolet light, it is preferable to proceed to the next step without removing them, because this protects the organic compound layer from ultraviolet light.

[0187] The mask layer removal step can be performed using the same method as the mask layer processing step. In particular, by using a wet etching method, damage to the organic compound layers 103R, 103G, and 103B during mask layer removal can be reduced compared to when a dry etching method is used.

[0188] The mask layer may also be removed by dissolving it in a solvent such as water or alcohol, such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0189] After removing the mask layer, a drying treatment may be performed to remove water contained in the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, as well as water adsorbed on the surfaces of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. For example, heat treatment can be performed in an inert gas atmosphere or a reduced-pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50° C. or higher and 200° C. or lower, preferably 60° C. or higher and 150° C. or lower, and more preferably 70° C. or higher and 120° C. or lower. A reduced-pressure atmosphere is preferable because it enables drying at a lower temperature.

[0190] Next, as shown in FIG. 7B, an inorganic insulating film 125f, which will later become the inorganic insulating layer 125, is formed to cover the organic compound layer 103R, the organic compound layer 103G, the organic compound layer 103B, the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B.

[0191] The inorganic insulating layer 125 can be made of the same inorganic insulating film as the sacrificial film 158Rf described above. For example, both the sacrificial film 158Rf and the inorganic insulating layer 125 can be made of aluminum oxide films formed using the ALD method. The sacrificial film 158Rf and the inorganic insulating layer 125 can be formed under the same or different film formation conditions. For example, by forming the sacrificial film 158Rf under the same conditions as the inorganic insulating layer 125, the sacrificial film 158Rf can be made into an insulating layer with high barrier properties against at least one of water and oxygen.

[0192] The inorganic insulating film 125f is preferably formed by, for example, the ALD method. The ALD method is preferable because it can reduce film formation damage and form a film with high coverage. Therefore, it is preferable to form an aluminum oxide film as the inorganic insulating film 125f by, for example, the ALD method.

[0193] The inorganic insulating film 125f may be formed by sputtering, CVD, or PECVD, which has a faster film formation rate than ALD, thereby increasing productivity.

[0194] Furthermore, a material that has ultraviolet ray blocking properties may be used for the inorganic insulating layer 125. The above description regarding the mask film can be referred to.

[0195] As will be described later, an insulating film 127f, which will later become the insulating layer 127, is formed in contact with the upper surface of the inorganic insulating film 125f. Therefore, it is preferable that the upper surface of the inorganic insulating film 125f has a high affinity with the material used for the insulating film (e.g., a photosensitive resin composition containing an acrylic resin). To improve this affinity, it is preferable to hydrophobize (or increase the hydrophobicity of) the upper surface of the inorganic insulating film 125f by performing a surface treatment. For example, it is preferable to perform the treatment using a silylating agent such as hexamethyldisilazane (HMDS). By hydrophobizing the upper surface of the inorganic insulating film 125f in this way, the insulating film 127f can be formed with good adhesion. The surface treatment may also be the hydrophobization treatment described above.

[0196] Subsequently, as shown in FIG. 7C, an insulating film 127f, which will later become the insulating layer 127, is formed on the inorganic insulating film 125f.

[0197] The inorganic insulating film 125f and the insulating film 127f are preferably formed by a formation method that causes less damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. In particular, since the inorganic insulating film 125f is formed in contact with the side surfaces of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, it is preferably formed by a formation method that causes less damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B than the insulating film 127f.

[0198] The inorganic insulating film 125f and the insulating film 127f are formed at a temperature lower than the heat-resistant temperatures of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, respectively. By increasing the substrate temperature during film formation, the inorganic insulating film 125f can be formed into a film with a low impurity concentration and a high barrier property against at least one of water and oxygen, even if it is thin.

[0199] The substrate temperature when forming the inorganic insulating film 125f and the insulating film 127f is preferably 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher, and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower, respectively.

[0200] As the inorganic insulating film 125f, it is preferable to form an insulating film having a thickness of 3 nm or more, 5 nm or more, or 10 nm or more, and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less within the above substrate temperature range.

[0201] The insulating film 127f is preferably formed by the wet film formation method described above. The insulating film 127f is preferably formed by, for example, spin coating using a photosensitive material, more specifically, using a photosensitive resin composition containing an acrylic resin.

[0202] The insulating film 127f is preferably formed using, for example, a resin composition containing a polymer, an acid generator, and a solvent. The polymer is formed using one or more types of monomers and has a structure in which one or more types of structural units (also referred to as constituent units) are regularly or irregularly repeated. As the acid generator, one or both of a compound that generates acid upon irradiation with light and a compound that generates acid upon heating can be used. The resin composition may further contain one or more of a photosensitizer, a sensitizer, a catalyst, an adhesion aid, a surfactant, and an antioxidant.

[0203] Furthermore, heat treatment (also referred to as pre-baking) is preferably performed after the insulating film 127f is formed. The heat treatment is performed at a temperature lower than the heat resistance temperature of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. The substrate temperature during the heat treatment is preferably 50° C. or higher and 200° C. or lower, more preferably 60° C. or higher and 150° C. or lower, and even more preferably 70° C. or higher and 120° C. or lower. This allows the solvent contained in the insulating film 127f to be removed.

[0204] Next, exposure is performed to expose a portion of the insulating film 127f to visible light or ultraviolet light. If a positive-type photosensitive resin composition containing an acrylic resin is used for the insulating film 127f, visible light or ultraviolet light is irradiated onto the region where the insulating layer 127 will not be formed in a later process. The insulating layer 127 is formed in the region sandwiched between any two of the conductive layers 152R, 152G, and 152B, and around the conductive layer 152C. Therefore, visible light or ultraviolet light is irradiated onto the conductive layers 152R, 152G, 152B, and 152C. If a negative-type photosensitive material is used for the insulating film 127f, visible light or ultraviolet light is irradiated onto the region where the insulating layer 127 will be formed.

[0205] The width of the insulating layer 127 to be formed later can be controlled by the exposed region of the insulating film 127f. In this embodiment mode, the insulating layer 127 is processed to have a portion overlapping with the top surface of the conductive layer 151.

[0206] The light used for exposure preferably contains i-line (wavelength 365 nm), and may contain at least one of g-line (wavelength 436 nm) and h-line (wavelength 405 nm).

[0207] Here, by forming at least the sacrificial layer 158 (the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B) from an aluminum oxide film having a barrier property against oxygen, it is possible to reduce the diffusion of oxygen into the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. Preferably, the inorganic insulating film 125f is also formed from an aluminum oxide film having a barrier property.

[0208] When the organic compound layer is irradiated with light (visible light or ultraviolet light), the organic compounds contained in the organic compound layer may be excited, which may promote a reaction with oxygen contained in the atmosphere. More specifically, when the organic compound layer is irradiated with light (visible light or ultraviolet light) in an oxygen-containing atmosphere, oxygen may bond to the organic compounds contained in the organic compound layer. By providing the sacrificial layer 158 and the inorganic insulating film 125f on the island-shaped organic compound layer, it is possible to reduce the bonding of oxygen in the atmosphere to the organic compounds contained in the organic compound layer.

[0209] 8A, development is performed to remove the exposed areas of the insulating film 127f, forming an insulating layer 127a. The insulating layer 127a is formed in a region sandwiched between any two of the conductive layers 152R, 152G, and 152B, and in a region surrounding the conductive layer 152C. When an acrylic resin is used for the insulating film 127f, an alkaline solution, such as TMAH, can be used as the developer.

[0210] Subsequently, residues (so-called scum) remaining after development may be removed, for example, by ashing using oxygen plasma.

[0211] Etching may be performed to adjust the height of the surface of the insulating layer 127a. The insulating layer 127a may be processed by ashing using oxygen plasma, for example. Even when a non-photosensitive material is used as the insulating film 127f, the height of the surface of the insulating film 127f can be adjusted by ashing, for example.

[0212] 8B, an etching process is performed using the insulating layer 127a as a mask to remove a portion of the inorganic insulating film 125f and thin the film thickness of a portion of the sacrificial layers 158R, 158G, and 158B. This results in the formation of the inorganic insulating layer 125 below the insulating layer 127a. Furthermore, the surfaces of the thin portions of the sacrificial layers 158R, 158G, and 158B are exposed. Hereinafter, the etching process using the insulating layer 127a as a mask may be referred to as the first etching process.

[0213] The first etching treatment can be performed by dry etching or wet etching. Note that, when the inorganic insulating film 125f is formed using the same material as the sacrificial layers 158R, 158G, and 158B, the first etching treatment can be performed all at once, which is preferable.

[0214] By performing etching using insulating layer 127a, which has tapered side surfaces, as a mask, the side surfaces of inorganic insulating layer 125 and the upper end portions of the side surfaces of sacrificial layers 158R, 158G, and 158B can be tapered relatively easily.

[0215] When dry etching is performed, it is preferable to use a chlorine-based gas. ２ , BCl ３ , SiCl ４ , and CCl ４ The chlorine-based gas may be added with oxygen gas, hydrogen gas, helium gas, argon gas, or the like, either alone or in combination of two or more gases. By using dry etching, thin regions of the sacrificial layers 158R, 158G, and 158B can be formed with good in-plane uniformity.

[0216] The dry etching apparatus may be a dry etching apparatus having a high-density plasma source. The dry etching apparatus having a high-density plasma source may be, for example, an inductively coupled plasma (ICP) etching apparatus. Alternatively, a capacitively coupled plasma (CCP) etching apparatus having parallel-plate electrodes may be used. The capacitively coupled plasma etching apparatus having parallel-plate electrodes may be configured to apply a high-frequency voltage to one of the parallel-plate electrodes. Alternatively, it may be configured to apply a plurality of different high-frequency voltages to one of the parallel-plate electrodes. Alternatively, it may be configured to apply a high-frequency voltage of the same frequency to each of the parallel-plate electrodes. Alternatively, it may be configured to apply high-frequency voltages of different frequencies to each of the parallel-plate electrodes.

[0217] Furthermore, when dry etching is performed, by-products and the like produced by the dry etching may be deposited on the upper surface and side surfaces of insulating layer 127a, etc. Therefore, components contained in the etching gas, components contained in inorganic insulating film 125f, and components contained in sacrificial layers 158R, 158G, and 158B may be contained in insulating layer 127 after the display device is completed.

[0218] Furthermore, it is preferable to perform the first etching process by wet etching. Using the wet etching method can reduce damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B compared to using the dry etching method. For example, the wet etching can be performed using an alkaline solution. For example, TMAH, an alkaline solution, can be used for wet etching of an aluminum oxide film. In this case, the wet etching can be performed by the paddle method. Note that if the inorganic insulating film 125f is formed using the same material as the sacrificial layers 158R, 158G, and 158B, the above-mentioned etching process can be performed simultaneously, which is preferable.

[0219] In the first etching process, the sacrificial layers 158R, 158G, and 158B are not completely removed, and the etching process is stopped when the film thicknesses of the sacrificial layers 158R, 158G, and 158B are reduced. In this manner, by leaving the sacrificial layers 158R, 158G, and 158B on the organic compound layers 103R, 103G, and 103B, respectively, it is possible to prevent the organic compound layers 103R, 103G, and 103B from being damaged in subsequent processes.

[0220] Subsequently, the entire substrate is exposed to visible light or ultraviolet light, and the insulating layer 127a is preferably irradiated with the energy density of the exposure. ２ Larger, 800 mJ / cm ２ It is preferable that the dose is 0 mJ / cm or less. ２ Greater than 500 mJ / cm ２ It is more preferable to perform the following. By performing such exposure after development, the transparency of the insulating layer 127a can be improved in some cases. Furthermore, the substrate temperature required for heat treatment to transform the insulating layer 127a into a tapered shape in a later step can be reduced in some cases.

[0221] Here, the presence of an oxygen barrier insulating layer (e.g., an aluminum oxide film) as the sacrificial layers 158R, 158G, and 158B can reduce oxygen diffusion into the organic compound layers 103R, 103G, and 103B. When the organic compound layers are irradiated with light (visible light or ultraviolet light), the organic compounds contained in the organic compound layers become excited, which may promote a reaction with oxygen contained in the atmosphere. More specifically, when light (visible light or ultraviolet light) is irradiated onto the organic compound layers in an oxygen-containing atmosphere, oxygen may bond to the organic compounds contained in the organic compound layers. By providing the sacrificial layers 158R, 158G, and 158B on the island-shaped organic compound layers, it is possible to reduce oxygen from the atmosphere bonding to the organic compounds contained in the organic compound layers.

[0222] Next, heat treatment (also referred to as post-baking) is performed. By performing the heat treatment, the insulating layer 127a can be transformed into the insulating layer 127 having tapered side surfaces ( FIG. 8C ). The heat treatment is performed at a temperature lower than the upper temperature limit of the organic compound layer. The heat treatment can be performed at a substrate temperature of 50° C. to 200° C., preferably 60° C. to 150° C., and more preferably 70° C. to 130° C. The heating atmosphere may be an air atmosphere or an inert gas atmosphere. The heating atmosphere may be an atmospheric pressure atmosphere or a reduced-pressure atmosphere. The substrate temperature in this heat treatment is preferably higher than that in the heat treatment (pre-baking) performed after the formation of the insulating film 127f. This can improve adhesion between the insulating layer 127 and the inorganic insulating layer 125 and also improve the corrosion resistance of the insulating layer 127.

[0223] By leaving the sacrificial layers 158R, 158G, and 158B in a thinner state without completely removing them in the first etching process, it is possible to prevent the organic compound layers 103R, 103G, and 103B from being damaged and deteriorated in the heat treatment, thereby improving the reliability of the light-emitting device.

[0224] Depending on the material of the insulating layer 127 and the temperature, time, and atmosphere of the post-baking, a concave curved shape may be formed on the side surface of the insulating layer 127. For example, the higher the temperature or the longer the post-baking time, the more likely the shape of the insulating layer 127 is to change, and a concave curved shape may be formed.

[0225] 9A , an etching process is performed using the insulating layer 127 as a mask to remove portions of the sacrificial layers 158R, 158G, and 158B. Note that a portion of the inorganic insulating layer 125 may also be removed. As a result, openings are formed in the sacrificial layers 158R, 158G, and 158B, respectively, exposing the top surfaces of the organic compound layers 103R, 103G, 103B, and the conductive layer 152C. Note that hereinafter, the etching process using the insulating layer 127 as a mask may be referred to as a second etching process.

[0226] The removal of the sacrificial layer by the second etching process uses an aqueous solution containing hydrofluoric acid and a Brønsted acid having a pH of 3 or more as an etchant. The Brønsted acid having a pH of 3 or more is preferably an acid having a buffering effect. Adding an acid having a buffering effect can suppress fluctuations in the pH of the aqueous solution used as the etchant, making it easier to handle.

[0227] pH is 3 or higher or water (H ２ Examples of Bronsted acids having an acid dissociation constant pKa of 0 or more and 13 or less with respect to HCl (O) include phosphoric acid, phosphorous acid, hypophosphorous acid, diphosphoric acid, sulfonic acid, carbonic acid, 1,3-diketones (acetylacetone, ethyl acetoacetate, Meldrum's acid, malonic acid), oxalic acid, acetic acid, formic acid, boric acid, organic boronic acids (phenylboronic acid, methylboronic acid, ethylboronic acid, furanylboronic acid), citric acid, etc.

[0228] In particular, the aqueous solution containing hydrofluoric acid and phosphoric acid has a high etching rate for aluminum oxide in the process of removing the dense aluminum oxide film on the organic compound layer, allowing for high processing yields. Furthermore, the aqueous solution containing hydrofluoric acid and phosphoric acid has little effect on the organic compound layer exposed by removing the sacrificial layer, making it less likely to cause damage during processing. Furthermore, the aqueous solution containing hydrofluoric acid and phosphoric acid is less likely to penetrate under other structures such as the insulating layer 127, allowing for high processing precision, thereby reducing process variability.

[0229] By using wet etching for the second etching process, damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be reduced compared to when dry etching is used.

[0230] On the other hand, when the second etching process is performed using a wet etching method, for example, due to problems with adhesion between the organic compound layer 103 and other layers, the chemical solution (etchant) used in the second etching process may penetrate between the organic compound layer 103 and the sacrificial layer 158, between the organic compound layer 103 and the inorganic insulating layer 125, and at the interface between the organic compound layer 103 and the insulating layer 175, resulting in the chemical solution coming into contact with the pixel electrodes. If the chemical solution comes into contact with both the conductive layer 151 and the conductive layer 152, the conductive layer with the lower natural potential may corrode due to galvanic corrosion. For example, if aluminum is used as the conductive layer 151 and indium tin oxide is used as the conductive layer 152, the conductive layer 152 is likely to corrode, which may result in a decrease in the yield of the display device. Furthermore, the device characteristics of the display device may be degraded.

[0231] Therefore, by removing the sacrificial layer using an aqueous solution containing hydrofluoric acid and phosphoric acid, which is one embodiment of the present invention, penetration of a chemical solution (etchant) between the insulating layer 127 and the inorganic insulating layer 125 or between the sacrificial layer 158 and the organic compound layer can be suppressed, and deformation defects can be suppressed.

[0232] Note that the first etching process is not necessarily required. That is, a second etching process may be performed to remove part of the inorganic insulating film 125f and part of the sacrificial layer 158 (sacrificial layer 158R, sacrificial layer 158G, and sacrificial layer 158B) and expose the organic compound layer. In this case, ashing using oxygen plasma or the like may be performed before the second etching process. The ashing can remove residue (scum) remaining when the insulating layer 127 is formed. Furthermore, for example, the height of the surface of the insulating film 127f may be adjusted by the ashing.

[0233] Furthermore, before the second etching treatment, heat treatment may be performed to tapere the side surfaces of the insulating layer 127. Preferably, the insulating layer 127 can be formed in a good shape by removing residues by ashing and then performing heat treatment.

[0234] If necessary, after performing oxygen plasma ashing or heat treatment, a part of the inorganic insulating film 125f and a part of the sacrificial layer 158 (sacrificial layer 158R, sacrificial layer 158G, and sacrificial layer 158B) may be removed all at once using the conditions of wet etching, which is the second etching treatment.

[0235] Furthermore, the insulating layer 127 may cover the entire end of the sacrificial layer 158G. For example, the end of the insulating layer 127 may droop and cover the end of the sacrificial layer 158G. Furthermore, for example, the end of the insulating layer 127 may contact the top surface of at least one of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. As described above, if the developed insulating layer 127a is not exposed to light, the shape of the insulating layer 127 may be easily deformed.

[0236] As described above, by providing the insulating layer 127, the inorganic insulating layer 125, the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, it is possible to prevent connection defects caused by disconnected portions of the common electrode 102 between the light-emitting devices and an increase in electrical resistance caused by locally thin portions of the common electrode 102. As a result, the display quality of the display device of one embodiment of the present invention can be improved.

[0237] Furthermore, after exposing portions of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, a further heat treatment is performed. This heat treatment can remove water contained in each organic compound layer, water adsorbed to the surface of each organic compound layer, and the like. This heat treatment may also change the shape of the insulating layer 127. Specifically, the insulating layer 127 may extend to cover at least one of the ends of the inorganic insulating layer 125, the ends of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, and the top surfaces of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B.

[0238] If the temperature of the heat treatment is too low, water contained in each organic compound layer and water adsorbed on the surface of each organic compound layer cannot be sufficiently removed. Furthermore, if the temperature of the heat treatment is too high, deterioration of the organic compound layer 103 and excessive change in the shape of the insulating layer 127 may occur. Therefore, the heat treatment is preferably performed at a temperature higher than the temperature at which water is desorbed from the organic compound layer 103 and lower than the glass transition temperature of the organic compound contained in the organic compound layer 103, and preferably lower than the glass transition temperature of the organic compound contained on the upper surface of the organic compound layer 103. Specifically, the heat treatment is preferably performed at a substrate temperature of 80°C to 130°C, preferably 90°C to 120°C, more preferably 100°C to 120°C, and even more preferably 100°C to 110°C. The heating atmosphere may be an air atmosphere or an inert gas atmosphere. The heating atmosphere may be an atmospheric pressure atmosphere or a reduced pressure atmosphere. However, a reduced pressure atmosphere is preferred to prevent re-adsorption of water desorbed from the organic compound layer 103.

[0239] This heat treatment can sufficiently remove water contained in each organic compound layer, water adsorbed on the surface of each organic compound layer, and the like, without causing deterioration of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, or excessive change in the shape of the insulating layer 127. This can prevent deterioration in the characteristics of the light-emitting device.

[0240] 9B , the common layer 104 and the common electrode 155 are formed on the organic compound layer 103R, the organic compound layer 103G, the organic compound layer 103B, the conductive layer 152C, and the insulating layer 127. The common layer 104 and the common electrode 155 can be formed by a method such as sputtering or vacuum deposition. The common layer 104 may be formed by deposition, and the common electrode 155 may be formed by sputtering.

[0241] 9C, a protective layer 131 is formed on the common electrode 155. The protective layer 131 can be formed by a method such as a vacuum deposition method, a sputtering method, a CVD method, or an ALD method.

[0242] Subsequently, the substrate 120 is attached over the protective layer 131 using the resin layer 122, whereby a display device can be manufactured. As described above, in the method for manufacturing a display device according to one embodiment of the present invention, the insulating layer 156 is provided on the side surfaces of the conductive layer 151 and the conductive layer 152. This can increase the yield of the display device and suppress the occurrence of defects.

[0243] As described above, in the manufacturing method of a display device according to one embodiment of the present invention, the island-shaped organic compound layers 103R, 103G, and 103B are formed by forming films over the entire surface and then processing them, rather than using a fine metal mask. This allows the island-shaped layers to be formed with uniform thicknesses. This allows a high-resolution display device or a display device with a high aperture ratio to be realized. Furthermore, even when the resolution or aperture ratio is high and the distance between subpixels is extremely short, the organic compound layers 103R, 103G, and 103B can be prevented from contacting each other between adjacent subpixels. Therefore, leakage current between subpixels can be suppressed. This prevents crosstalk and realizes a display device with extremely high contrast. Furthermore, even in a display device including tandem light-emitting devices fabricated by lithography, a display device with excellent characteristics can be provided.

[0244] The structure of this embodiment can be used in appropriate combination with structures of other embodiments.

[0245] Third Embodiment In this embodiment, each component of the light-emitting device 130 and materials that can be used therefor will be described.

[0246] <<Configuration of the First Electrode>> The first electrode 101 is an electrode including an anode. The first electrode 101 may have a stacked structure, in which case the layer in contact with the organic compound layer 103 functions as the anode. The anode is preferably formed using a metal, alloy, conductive compound, or mixture thereof with a high work function (specifically, 4.0 eV or higher). Specific examples include indium oxide-tin oxide (ITO), indium oxide-tin oxide containing silicon or silicon oxide, indium oxide-zinc oxide, and indium oxide containing tungsten oxide and zinc oxide (IWZO). These conductive metal oxide films are typically formed by sputtering, but may also be formed by applying a sol-gel method or the like. For example, indium oxide-zinc oxide may be formed by sputtering using a target containing indium oxide and 1 to 20 wt % zinc oxide. Indium oxide containing tungsten oxide and zinc oxide (IWZO) can also be formed by sputtering using a target containing 0.5 to 5 wt % tungsten oxide and 0.1 to 1 wt % zinc oxide relative to indium oxide. Other materials that can be used for the anode include, for example, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), and nitrides of metal materials (e.g., titanium nitride). Alternatively, graphene can be used for the anode. Note that using the second layer 162 of the intermediate layer 160 as a layer in contact with the anode (typically a hole injection layer) allows the electrode material to be selected regardless of the work function.

[0247] <Configuration of Hole Injection Layer> The hole injection layer 111 is provided in contact with the anode and has a function of facilitating injection of holes into the organic compound layer 103 (first light-emitting unit 501). The hole injection layer 111 is made of phthalocyanine (abbreviation: H ２phthalocyanine compounds such as 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB) and 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviation: DNTPD), or polymers such as poly(3,4-ethylenedioxythiophene) / (polystyrenesulfonic acid) (abbreviation: PEDOT / PSS).

[0248] The hole-injection layer 111 may be formed using a substance having electron acceptor properties. As the substance having acceptor properties, the substances exemplified as acceptor substances used for the second layer 162 in the intermediate layer 160 can be used in the same manner.

[0249] The hole injection layer 111 may be formed using the hole transporting material used for the second layer 162 in the intermediate layer 160 .

[0250] In the hole-injection layer 111, the organic compound having hole-transporting properties used in the composite material is more preferably a substance having a relatively deep HOMO level of -5.7 eV or more and -5.4 eV or less. When the organic compound having hole-transporting properties used in the composite material has a relatively deep HOMO level, injection of holes into the hole-transport layer becomes easy, and a light-emitting device with a long lifetime can be easily obtained. Furthermore, when the organic compound having hole-transporting properties used in the composite material is a substance having a relatively deep HOMO level, hole induction can be appropriately suppressed, and a light-emitting device with a long lifetime can be obtained.

[0251] By forming the hole injection layer 111, the hole injection property becomes good, and a light emitting device with a low driving voltage can be obtained.

[0252] Among substances having acceptor properties, organic compounds having acceptor properties are easy to use because they can be easily vapor-deposited and formed into a film.

[0253] Furthermore, since the second layer 162 in the intermediate layer 160 functions as a hole injection layer, the second light-emitting unit 502 does not have a hole injection layer, but the second light-emitting unit may have a hole injection layer.

[0254] The hole-transporting layers (the first hole-transporting layer 112_1 and the second hole-transporting layer 112_2) are formed by containing an organic compound having a hole-transporting property. −６ cm ２ It is preferable that the material has a hole mobility of 1.0 V or more.

[0255] Examples of the material having a hole transporting property include 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N′-diphenyl-N,N′-bis(3-methylphenyl)-4,4′-diaminobiphenyl (abbreviation: TPD), N,N′-bis(9,9′-spirobi[9H-fluoren]-2-yl)-N,N′-diphenyl-4,4′-diaminobiphenyl (abbreviation: BSPB), 4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3-methylphenyl-4,4′-diaminobiphenyl (abbreviation: 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), 4-phenyl-3-methylphenyl-4,4′-diaminobiphenyl (abbreviation: 4,4′-bis(9,9′-spirobi[9H-fluoren]-2-yl)-N,N′-diphenyl-4,4′-diaminobiphenyl (abbreviation: 4,4′-bis(9H-fluoren-9-yl)triphenylamine) (abbreviation: BPAFLP), 4-phenyl-3-methyl ...BPAFLP), 4-phenyl-3-methylphenyl-4,4′-diaminobiphenyl (abbr 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), compounds having an aromatic amine skeleton such as 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di( N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 9,9'-bis(biphenyl-4-yl)-3,3'-bi-9H-carbazole (abbreviation: BisBPCz), 9,9'-bis(biphenyl-3-yl)-3,3'-bi-9H-carbazole (abbreviation: BismBPCz), 9-(biphenyl-3-yl)-9'-(biphenyl-4-yl)-9H,9'H-3,3'-bicarbazole (abbreviation: mBPCCBP), 9-(2-naphthyl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: βNCCP), 9-(3-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCmBP), 9-(4-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCBP), 9,9'-di-2-naphthyl-3,3'-9H,9'H-bicarbazole (abbreviation: :BisβNCz), 9-(2-naphthyl)-9'-[1,1':4',1"-terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-5'-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':4',1"- terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole, 9-phenyl-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole (abbreviation: PCCzTp), 9,9'-bis(triphenylene-2 compounds having a carbazole skeleton such as 9-(4-biphenyl)-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(triphenylen-2-yl)-9'-[1,1':3',1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,Examples of suitable compounds include compounds having a thiophene skeleton, such as 8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III) and 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), and compounds having a furan skeleton, such as 4,4′,4″-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II). Among the compounds listed above, compounds having an aromatic amine skeleton and compounds having a carbazole skeleton are preferred because they have good reliability, high hole transport properties, and contribute to reducing driving voltage. Note that the substances listed as the materials having hole transport properties used in the composite material of the hole injection layer 111 can also be suitably used as materials for forming the hole transport layer.

[0256] <<Configuration of Light-Emitting Layer>> The light-emitting layers (light-emitting layer 113, first light-emitting layer 113_1, and second light-emitting layer 113_2) preferably contain a light-emitting substance and a host material. Note that the light-emitting layer may also contain other materials. Alternatively, the light-emitting layer may be a stack of two layers with different compositions.

[0257] The luminescent material may be a fluorescent material, a phosphorescent material, a material exhibiting thermally activated delayed fluorescence (TADF), or any other luminescent material.

[0258] Examples of materials that can be used as fluorescent materials in the light-emitting layer include the following: In addition, fluorescent materials other than these can also be used.

[0259] 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine )phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4-( 10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis(N,N',N'-triphenyl-1,4-phenylenediamine) (abbreviation: DPABPA), N,9 -diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: 2PAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), N,N,N',N',N'',N'',N''',N'''-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), Coumarin 30, N-(9,10-diphenyl-2-anthryl)-N,9-Diphenyl-9H-carbazole-3-amine (abbreviation: 2PCAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), 9,10-bis(2-biphenyl)-2-(N,N',N'-triphenyl-1,4-phenylenediamine-N-yl)anthracene (abbreviation: 2DPABPhA) , 9,10-bis(biphenyl-2-yl)-N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenylanthracen-9-amine (abbreviation: DPhAPhA), Coumarin 545T, N,N'-diphenylquinacridone (abbreviation: DPQd), rubrene, 5,12-bis(biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyra N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhTD), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhTD), Name: p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB), 2-(2,6-bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: BisDCJ™), N,N'-diphenyl-N,N'-(1,6-pyren-diyl)bis[(6-phenylbenzo[b ]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), 3,10-bis[N-(9-phenyl-9H-carbazol-2-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10PCA2Nbf(IV)-02), and 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02). In particular, condensed aromatic diamine compounds typified by pyrene diamine compounds such as 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03 are preferred because they have high hole-trapping properties and excellent luminous efficiency or reliability. ,

[0260] When a phosphorescent material is used as the light-emitting material in the light-emitting layer, examples of materials that can be used include the following.

[0261] Tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp) ３ ]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Mptz) ３ ]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(iPrptz-3b) ３organometallic iridium complexes having a 4H-triazole skeleton, such as tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(Mptz1-mp) ３ ]), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Prptz1-Me) ３ organometallic iridium complexes having a 1H-triazole skeleton, such as fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpim) ３ ]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviation: [Ir(dmpimpt-Me) ３ organometallic iridium complexes having an imidazole skeleton, such as bis[2-(4',6'-difluorophenyl)pyridinato-N,C ２’ ]iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinato-N,C ２’ ]iridium(III) picolinate (abbreviation: FIrpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C ２’} Iridium(III) picolinate (abbreviation: [Ir(CF ３ ppy) ２ (pic)]), bis[2-(4',6'-difluorophenyl)pyridinato-N,C ２’ ] Organometallic iridium complexes having a phenylpyridine derivative having an electron-withdrawing group as a ligand, such as iridium(III) acetylacetonate (abbreviation: FIracac), are examples of such compounds that exhibit blue phosphorescence and have an emission peak in the wavelength range of 450 nm to 520 nm.

[0262] Also, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm) ３]), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm) ３ ]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm) ２ (acac)]), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm) ２ (acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm) ２ (acac)]), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm) ２ (acac)]), (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm) ２ organometallic iridium complexes having a pyrimidine skeleton, such as (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-Me) ２ (acac)]), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-iPr) ２ organometallic iridium complexes having a pyrazine skeleton, such as tris(2-phenylpyridinato-N,C(acac)]); ２’ ) Iridium(III) (abbreviation: [Ir(ppy) ３ ]), bis(2-phenylpyridinato-N,C ２’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(ppy) ２ (acac)]), bis(benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [Ir(bzq) ２ (acac)]), tris(benzo[h]quinolinato)iridium(III) (abbreviation: [Ir(bzq) ３]), tris(2-phenylquinolinato-N,C ２’ ) Iridium(III) (abbreviation: [Ir(pq) ３ ]), bis(2-phenylquinolinato-N,C ２’ ) iridium(III) acetylacetonate (abbreviation: [Ir(pq) ２ (acac)]), [2-d3-methyl-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(5mppy-d3) ２ (mbfpypy-d3)), {2-(methyl-d3)-8-[4-(1-methylethyl-1-d)-2-pyridinyl-κN]benzofuro[2,3-b]pyridin-7-yl-κC}bis{5-(methyl-d3)-2-[5-(methyl-d3)-2-pyridinyl-κN]phenyl-κC}iridium(III) (abbreviation: Ir(5mtpy-d6) ２ (mbfpypy-iPr-d4)), [2-d3-methyl-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy) ２ (mbfpypy-d3)), [2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy) ２ In addition to organometallic iridium complexes having a pyridine skeleton, such as tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: [Tb(acac) ３ These compounds mainly exhibit green phosphorescence, with an emission peak in the wavelength range of 500 nm to 600 nm. Organometallic iridium complexes having a pyrimidine skeleton are particularly preferred because they are remarkably excellent in reliability and luminous efficiency.

[0263] Also, (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm) ２ (dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm) ２ (dpm)]), bis[4,6-di(naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(dpm) ２ organometallic iridium complexes having a pyrimidine skeleton, such as (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr) ２ (acac)]), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr) ２ (dpm)]), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq) ２ organometallic iridium complexes having a pyrazine skeleton, such as tris(1-phenylisoquinolinato-N,C(acac)]); ２’ ) Iridium(III) (abbreviation: [Ir(piq) ３ ]), bis(1-phenylisoquinolinato-N,C ２’ ) iridium(III) acetylacetonate (abbreviation: [Ir(piq) ２ In addition to organometallic iridium complexes having a pyridine skeleton such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrinplatinum(II) (abbreviation: PtOEP), platinum complexes such as tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM) ３ (Phen)]), tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: [Eu(TTA) ３Examples of rare earth metal complexes include iridium complexes such as iridium complexes containing pyrazine skeletons and iridium complexes containing iridium ions. These compounds exhibit red phosphorescence and have an emission peak in the wavelength range of 600 nm to 700 nm. Organometallic iridium complexes containing pyrazine skeletons exhibit red emission with good chromaticity.

[0264] In addition to the phosphorescent compounds described above, known phosphorescent compounds may be selected and used.

[0265] Examples of TADF materials that can be used include fullerene and its derivatives, acridine and its derivatives, and eosin derivatives. Other examples include metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd). Examples of metal-containing porphyrins include protoporphyrin-tin fluoride complexes (SnF), which are represented by the following structural formula: ２ (Proto IX)), mesoporphyrin-tin fluoride complex (SnF ２ (Meso IX)), hematoporphyrin-tin fluoride complex (SnF ２ (Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF ２ (Copro III-4Me)), octaethylporphyrin-tin fluoride complex (SnF ２ (OEP)), etioporphyrin-tin fluoride complex (SnF ２ (Etio I)), octaethylporphyrin-platinum chloride complex (PtCl ２ OEP) and the like.

[0266]

[0267] Further, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-9′-phenyl-9H,9′H-3,3′-bicarbazole (abbreviation: PCCzTzn), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), and Heterocyclic compounds having one or both of a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring, such as 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), and 10-phenyl-10H,10′H-spiro[acridine-9,9′-anthracene]-10′-one (abbreviation: ACRSA), can also be used. The heterocyclic compound has a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring, and therefore has high electron transport and hole transport properties, making it preferable. Among the skeletons having a π-electron-deficient heteroaromatic ring, pyridine skeleton, diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), and triazine skeleton are preferred because they are stable and reliable. In particular, benzofuropyrimidine skeleton, benzothienopyrimidine skeleton, benzofuropyrazine skeleton, and benzothienopyrazine skeleton are preferred because they have high acceptor properties and good reliability. Furthermore, among the skeletons having a π-electron-rich heteroaromatic ring, acridine skeleton, phenoxazine skeleton, phenothiazine skeleton, furan skeleton, thiophene skeleton, and pyrrole skeleton are preferred because they are stable and reliable.The furan skeleton is preferably a dibenzofuran skeleton, and the thiophene skeleton is preferably a dibenzothiophene skeleton. The pyrrole skeleton is particularly preferably an indole skeleton, a carbazole skeleton, an indolocarbazole skeleton, a bicarbazole skeleton, or a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton. A substance in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded is particularly preferred because the electron-donating property of the π-electron-rich heteroaromatic ring and the electron-accepting property of the π-electron-deficient heteroaromatic ring are both enhanced, reducing the energy difference between the S1 level and the T1 level, thereby enabling efficient thermally activated delayed fluorescence. Instead of the π-electron-deficient heteroaromatic ring, an aromatic ring bonded to an electron-withdrawing group such as a cyano group may be used. The π-electron-rich skeleton may be, for example, an aromatic amine skeleton or a phenazine skeleton. Examples of usable π-electron-deficient skeletons include a xanthene skeleton, a thioxanthene dioxide skeleton, an oxadiazole skeleton, a triazole skeleton, an imidazole skeleton, an anthraquinone skeleton, a boron-containing skeleton such as phenylborane or boranthrene, an aromatic ring having a nitrile group or a cyano group such as benzonitrile or cyanobenzene, a heteroaromatic ring, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, a sulfone skeleton, etc. In this way, a π-electron-deficient skeleton and a π-electron-rich skeleton can be used in place of at least one of a π-electron-deficient heteroaromatic ring and a π-electron-rich heteroaromatic ring.

[0268]

[0269] Alternatively, a TADF material in which the singlet excited state and the triplet excited state are in thermal equilibrium may be used. Such a TADF material has a short emission lifetime (excitation lifetime), which can suppress a decrease in efficiency in the high-brightness region of a light-emitting device. Specific examples include materials with the molecular structure shown below.

[0270]

[0271] The TADF material is a material that has a small difference between the S1 level and the T1 level and has the function of converting triplet excitation energy to singlet excitation energy by reverse intersystem crossing. Therefore, triplet excitation energy can be upconverted to singlet excitation energy (reverse intersystem crossing) with a small amount of thermal energy, and a singlet excited state can be efficiently generated. Furthermore, triplet excitation energy can be converted into luminescence.

[0272] Furthermore, an exciplex (also called an exciplex) that forms an excited state with two types of substances has an extremely small difference between the S1 level and the T1 level, and functions as a TADF material that can convert triplet excitation energy into singlet excitation energy.

[0273] The T1 level can be determined by using a phosphorescence spectrum observed at low temperatures (e.g., 77 K to 10 K). When a tangent line is drawn at the base of the fluorescence spectrum on the short wavelength side of the TADF material, and the energy of the wavelength of the extrapolated line is defined as the S1 level, and when a tangent line is drawn at the base of the phosphorescence spectrum on the short wavelength side of the TADF material, and the energy of the wavelength of the extrapolated line is defined as the T1 level, the difference between S1 and T1 is preferably 0.3 eV or less, and more preferably 0.2 eV or less.

[0274] When a TADF material is used as a light-emitting material, the S1 level of the host material is preferably higher than the S1 level of the TADF material, and the T1 level of the host material is preferably higher than the T1 level of the TADF material.

[0275] As the host material of the light-emitting layer, various carrier transport materials such as a material having an electron transport property and / or a material having a hole transport property, and the above-mentioned TADF material can be used.

[0276] As the material having a hole transporting property, the materials exemplified above as the material having a hole transporting property can be used in the same manner.

[0277] As the material having an electron transporting property, the materials exemplified above as the material having an electron transporting property can be used in the same manner.

[0278] The TADF materials that can be used as the host material can be the same as those listed above. When a TADF material is used as a host material, triplet excitation energy generated in the TADF material is converted into singlet excitation energy by reverse intersystem crossing, and the energy is further transferred to a light-emitting substance, thereby improving the luminous efficiency of the light-emitting device. In this case, the TADF material functions as an energy donor, and the light-emitting substance functions as an energy acceptor.

[0279] This is very effective when the luminescent material is a fluorescent luminescent material. Furthermore, in this case, in order to obtain high luminous efficiency, it is preferable that the S1 level of the TADF material is higher than the S1 level of the fluorescent luminescent material. Furthermore, it is preferable that the T1 level of the TADF material is higher than the S1 level of the fluorescent luminescent material. Therefore, it is preferable that the T1 level of the TADF material is higher than the T1 level of the fluorescent luminescent material.

[0280] It is also preferable to use a TADF material that emits light that overlaps with the wavelength of the lowest-energy absorption band of the fluorescent material, since this allows for smooth transfer of excitation energy from the TADF material to the fluorescent material, resulting in efficient light emission.

[0281] Furthermore, in order to efficiently generate singlet excitation energy from triplet excitation energy through reverse intersystem crossing, it is preferable that carrier recombination occurs in the TADF material. It is also preferable that the triplet excitation energy generated in the TADF material does not transfer to the triplet excitation energy of the fluorescent material. To this end, it is preferable that the fluorescent material has a protecting group around the luminophore (the skeleton responsible for light emission) possessed by the fluorescent material. The protecting group is preferably a substituent without a π bond, and is preferably a saturated hydrocarbon. Specific examples include alkyl groups having 3 to 10 carbon atoms, substituted or unsubstituted cycloalkyl groups having 3 to 10 carbon atoms, and trialkylsilyl groups having 3 to 10 carbon atoms. It is even more preferable that the protecting group has multiple protecting groups. Substituents without a π bond have poor carrier transport function, so the distance between the TADF material and the luminophore of the fluorescent material can be increased without significantly affecting carrier transport or carrier recombination. Here, the luminophore refers to the atomic group (skeleton) responsible for light emission in the fluorescent material. The luminophore preferably has a skeleton having a π bond, preferably contains an aromatic ring, and preferably has a fused aromatic ring or a fused heteroaromatic ring. Examples of such luminophores include a phenanthrene skeleton, a stilbene skeleton, an acridone skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, and a naphthobisbenzofuran skeleton. In particular, fluorescent materials having a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, or a naphthobisbenzofuran skeleton are preferred because of their high fluorescence quantum yield.

[0282] When a fluorescent light-emitting substance is used as the light-emitting substance, a material having an anthracene skeleton is suitable as the host material. Using a substance having an anthracene skeleton as the host material for a fluorescent light-emitting substance makes it possible to realize an emitting layer with both excellent luminous efficiency and durability. As a substance having an anthracene skeleton used as the host material, a substance having a diphenylanthracene skeleton, particularly a 9,10-diphenylanthracene skeleton, is preferred because it is chemically stable. Furthermore, a host material having a carbazole skeleton is preferred because it enhances hole injection and transport properties. However, a host material containing a benzocarbazole skeleton in which a benzene ring is further condensed to carbazole is more preferred because its HOMO is shallower by about 0.1 eV than a host material having a carbazole skeleton, making it easier for holes to enter. In particular, a host material containing a dibenzocarbazole skeleton is preferred because its HOMO is shallower by about 0.1 eV than a host material having a carbazole skeleton, making it easier for holes to enter, and it also has excellent hole transport properties and high heat resistance. Therefore, a more preferable host material is a substance having both a 9,10-diphenylanthracene skeleton and a carbazole skeleton (or a benzocarbazole skeleton or a dibenzocarbazole skeleton). Note that, in view of the hole injection / transport property, a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of the carbazole skeleton.Examples of such substances include 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-[4′-(9-phenyl-9H-fluoren-9-yl)biphenyl-4-yl] 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 9-(1-naphthyl)-10-(2-naphthyl)anthracene (abbreviation: α,β-ADN), 2-(10-phenylanthracen-9-yl)dibenzofuran, 2-(10-phenyl-9-anthracenyl)benzo Examples include zo[b]naphtho[2,3-d]furan (abbreviation: Bnf(II)PhA), 9-(2-naphthyl)-10-[3-(2-naphthyl)phenyl]anthracene (abbreviation: βN-mβNPAnth), 1-{4-[10-(biphenyl-4-yl)-9-anthracenyl]phenyl}-2-ethyl-1H-benzimidazole (abbreviation: EtBImPBPhA), etc. In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA are preferred choices because they exhibit very good properties.

[0283] The host material may be a mixture of a plurality of substances. When a mixture of host materials is used, it is preferable to mix a material having electron transport properties with a material having hole transport properties. By mixing a material having electron transport properties with a material having hole transport properties, the transport properties of the light-emitting layer 113 can be easily adjusted, and the recombination region can also be easily controlled. The weight ratio of the content of the material having hole transport properties to the material having electron transport properties may be 1:19 to 19:1 (material having hole transport properties:material having electron transport properties).

[0284] A phosphorescent material can be used as part of the mixed material. The phosphorescent material can be used as an energy donor that provides excitation energy to a fluorescent material when the fluorescent material is used as a light-emitting material.

[0285] Furthermore, these mixed materials may form an exciplex. It is preferable to select a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest-energy absorption band of the light-emitting material, because this allows for smooth energy transfer and efficient light emission. Furthermore, using this structure is also preferable because it reduces the driving voltage.

[0286] At least one of the materials forming the exciplex may be a phosphorescent material, which allows efficient conversion of triplet excitation energy into singlet excitation energy through reverse intersystem crossing.

[0287] As a combination of materials that efficiently form an exciplex, it is preferable that the HOMO level of the material having hole transport properties is equal to or higher than the HOMO level of the material having electron transport properties. Also, it is preferable that the LUMO level of the material having hole transport properties is equal to or higher than the LUMO level of the material having electron transport properties. Note that the LUMO level and HOMO level of the material can be derived from the electrochemical properties (reduction potential and oxidation potential) of the material measured by cyclic voltammetry (CV).

[0288] The formation of exciplexes can be confirmed, for example, by comparing the emission spectra of a material with hole transport properties, a material with electron transport properties, and a mixed film obtained by mixing these materials, and observing the phenomenon in which the emission spectrum of the mixed film is shifted to longer wavelengths than the emission spectra of each material (or has a new peak at longer wavelengths). Alternatively, it can be confirmed by comparing the transient photoluminescence (PL) of a material with hole transport properties, the transient PL of a material with electron transport properties, and a mixed film obtained by mixing these materials, and observing differences in transient response, such as the transient PL lifetime of the mixed film having a longer-lifetime component or a larger proportion of delayed components than the transient PL lifetimes of the individual materials. The above-mentioned transient PL may also be interpreted as transient electroluminescence (EL). In other words, the formation of exciplexes can also be confirmed by comparing the transient EL of a material with hole transport properties, the transient EL of a material with electron transport properties, and a mixed film obtained by mixing these materials, and observing the differences in transient response.

[0289] The electron transport layer (the electron transport layer 114, the first electron transport layer 114_1, and the second electron transport layer 114_2) is a layer containing a substance having an electron transport property. The material having an electron transport property is a material having an electron mobility of 1×10 at a square root of an electric field strength [V / cm] of 600. −７ cm ２ / Vs or more, preferably 1×10 −６ cm ２ A substance having an electron mobility of 1 / Vs or more is preferred. Note that, other substances can be used as long as they have a higher electron transporting property than holes. Note that, as the organic compound, an organic compound having a π-electron-deficient heteroaromatic ring is preferred. As the organic compound having a π-electron-deficient heteroaromatic ring, for example, one or more of an organic compound including a heteroaromatic ring having a polyazole skeleton, an organic compound including a heteroaromatic ring having a pyridine skeleton, an organic compound including a heteroaromatic ring having a diazine skeleton, and an organic compound including a heteroaromatic ring having a triazine skeleton are preferred.

[0290] As the organic compound having electron transport properties that can be used in the electron transport layer, the same organic compounds that can be used as the organic compound having electron transport properties in the first layer of the intermediate layer 160 can be used. Among them, organic compounds including a heteroaromatic ring with a diazine skeleton, an organic compound including a heteroaromatic ring with a pyridine skeleton, and an organic compound including a heteroaromatic ring with a triazine skeleton are preferred because of their high reliability. In particular, organic compounds including a heteroaromatic ring with a diazine (pyrimidine or pyrazine) skeleton and organic compounds including a heteroaromatic ring with a triazine skeleton have high electron transport properties and contribute to reducing driving voltage.

[0291] The electron transport layer has an electron mobility of 1×10 when the square root of the electric field strength [V / cm] is 600. −７ cm ２ / Vs or more 5×10 −５ cm ２ / Vs or less. By reducing the electron transport property of the electron transport layer, the amount of electrons injected into the light-emitting layer can be controlled, and the light-emitting layer can be prevented from becoming an electron-excess state. This configuration is particularly preferable when the hole injection layer is formed of a composite material and the HOMO level of the material having hole transport property in the composite material is a substance having a relatively deep HOMO level of -5.7 eV or more and -5.4 eV or less, because this configuration improves the lifetime. In this case, the HOMO level of the material having electron transport property is preferably -6.0 eV or more.

[0292] For example, a heteroaromatic compound can be used as an electron transport material for the electron transport layer. A heteroaromatic compound is a cyclic compound containing at least two different elements in a ring. Examples of ring structures include a three-membered ring, a four-membered ring, a five-membered ring, and a six-membered ring, with a five-membered ring or a six-membered ring being particularly preferred. The elements contained therein are preferably heteroaromatic compounds containing one or more of nitrogen, oxygen, or sulfur in addition to carbon. Heteroaromatic compounds containing nitrogen (nitrogen-containing heteroaromatic compounds) are particularly preferred, and it is preferable to use a material (electron transport material) with high electron transport properties, such as a nitrogen-containing heteroaromatic compound or a π-electron-deficient heteroaromatic compound containing the same. The compound of embodiment 1 has electron transport properties and can therefore be used as an electron transport material.

[0293] The electron transport material may be a material different from the material used in the light-emitting layer. Not all of the excitons generated by carrier recombination in the light-emitting layer can contribute to light emission, and they may diffuse to layers adjacent to or in the vicinity of the light-emitting layer. To avoid this phenomenon, it is preferable that the energy level (lowest singlet excitation level or lowest triplet excitation level) of the material used in the layer adjacent to or in the vicinity of the light-emitting layer is higher than that of the material used in the light-emitting layer. Therefore, by using a material different from the material used in the light-emitting layer as the electron transport material, a highly efficient device can be obtained.

[0294] A heteroaromatic compound is an organic compound that contains at least one heteroaromatic ring.

[0295] The heteroaromatic ring has any one of a pyridine ring, a diazine ring, a triazine ring, a polyazole ring, an oxazole ring, a thiazole ring, etc. The heteroaromatic ring having a diazine ring includes a heteroaromatic ring having a pyrimidine ring, a pyrazine ring, a pyridazine ring, etc. The heteroaromatic ring having a polyazole ring includes a heteroaromatic ring having an imidazole ring, a triazole ring, or an oxadiazole ring.

[0296] The heteroaromatic ring also includes a fused heteroaromatic ring having a fused ring structure, such as a quinoline ring, a benzoquinoline ring, a quinoxaline ring, a dibenzoquinoxaline ring, a quinazoline ring, a benzoquinazoline ring, a dibenzoquinazoline ring, a phenanthroline ring, a phlodiazin ring, or a benzimidazole ring.

[0297] Among heteroaromatic compounds containing one or more of nitrogen, oxygen, and sulfur in addition to carbon, examples of heteroaromatic compounds having a five-membered ring structure include heteroaromatic compounds having an imidazole ring, heteroaromatic compounds having a triazole ring, heteroaromatic compounds having an oxazole ring, heteroaromatic compounds having an oxadiazole ring, heteroaromatic compounds having a thiazole ring, and heteroaromatic compounds having a benzimidazole ring.

[0298] Furthermore, among heteroaromatic compounds containing one or more of nitrogen, oxygen, and sulfur in addition to carbon, examples of heteroaromatic compounds having a six-membered ring structure include heteroaromatic compounds having a heteroaromatic ring such as a pyridine ring, a diazine ring (including a pyrimidine ring, a pyrazine ring, and a pyridazine ring), a triazine ring, and a polyazole ring.Heteroaromatic compounds having a structure in which pyridine rings are linked include heteroaromatic compounds having a bipyridine structure and heteroaromatic compounds having a terpyridine structure.

[0299] Furthermore, examples of heteroaromatic compounds having a fused ring structure partially containing the above-mentioned 6-membered ring structure include heteroaromatic compounds having a fused heteroaromatic ring such as a quinoline ring, a benzoquinoline ring, a quinoxaline ring, a dibenzoquinoxaline ring, a phenanthroline ring, a furodiazine ring (including a structure in which an aromatic ring is fused to the furan ring of a furodiazine ring), and a benzimidazole ring.

[0300] Specific examples of the heteroaromatic compound having a five-membered ring structure (such as a polyazole ring (including an imidazole ring, a triazole ring, and an oxadiazole ring), an oxazole ring, a thiazole ring, and a benzimidazole ring) include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 3-(4-biphenylyl)-4-furan (abbreviation: OXD-7 ... phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 3-(4-tert-butylphenyl)-4-(4-ethylphenyl)-5-(4-biphenylyl)-1,2,4-triazole (abbreviation: p-EtTAZ), 2,2′,2″-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), 4,4′-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOS), and the like.

[0301] Specific examples of the heteroaromatic compound having a 6-membered ring structure (including a heteroaromatic ring having a pyridine ring, a diazine ring, a triazine ring, or the like) include heteroaromatic compounds having a pyridine ring, such as 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy) and 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB); 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1 ,3,5-triazine (abbreviation: PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 2-[3'-(triphenylen-2-yl)biphenyl-3-yl]-4,6-diphenyl-1 ... 2-(biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobi[9H-fluoren]-2-yl)-1,3,5-triazine (abbreviation: BP-SFTzn), 2,6-bis(4-naphthalen-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviation: 2,4NP-6PyPPm), 3-[9-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (abbreviation: PCDBfTzn), 2-(biphenyl-3 heteroaromatic compounds containing a heteroaromatic ring having a triazine ring, such as 2-{3-[3-(dibenzothiophen-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mDBtBPTzn), 2-{3-[3-(dibenzothiophen-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 4,6-bis[3-(phenanthren-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm ...6-bis[3-(dibenzothiophen-4-yl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), 4,6mCzBP2Pm, 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4C z2PPm), 4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenyl-6-(biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), 4-[3-(dibenzothiophen-4-yl)phenyl]-8-(naphthalen-2-yl)-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8βN-4mDBtPBfpm), 8BP-4mDBtPBfpm, 9mDBtB PNfpr, 9pmDBtBPNfpr, 3,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzofuro[2,3-b]pyrazine (abbreviation: 3,8mDBtP2Bfpr), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 4,8mDBtP2Bfpm), 8-[3′-(dibenzothiophen-4-yl)biphenyl-3- and heteroaromatic compounds containing a heteroaromatic ring having a diazine (pyrimidine) ring, such as 8-[(2,2'-binaphthalen)-6-yl]-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8(βN2)-4mDBtPBfpm). The aromatic compounds containing a heteroaromatic ring include heteroaromatic compounds having a fused heteroaromatic ring.

[0302] Other examples include 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn)2Py), 2,2'-(2,2'-bipyridine-6,6'-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 6,6'(P-Bqn)2BPy), 2,2'-(pyridine-2,6-diyl)bis{4-[4-(2-naphthyl)phenyl]-6-phenylpyrimidine} (abbreviation: 2,6(NP-PPm) ２ heteroaromatic compounds containing a heteroaromatic ring having a diazine (pyrimidine) ring, such as 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm), 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPP), and heteroaromatic compounds containing a heteroaromatic ring having a triazine ring, such as 2,4,6-tris(2-pyridyl)-1,3,5-triazine (abbreviation: 2Py3Tz), 2,4,6-tris(2-pyridyl)-1,3,5-triazine (abbreviation: 2Py3Tz), and 2-[3-(2,6-dimethyl-3-pyridinyl)-5-(9-phenanthrenyl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn).

[0303] Specific examples of the heteroaromatic compound having a fused ring structure partially containing a 6-membered ring structure (heteroaromatic compound having a fused ring structure) include bathophenanthroline (abbreviation: BPhen), bathocuproine (abbreviation: BCP), 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), 2,2′-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline), 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn)2Py), 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTP), 2,2'-biphenyl-4,4'-diylbis(9-phenyl-1,10-phenanthroline) (abbreviation: PPhen2BP), 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn)2Py), 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTP) DBq-II), 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4-(3,6-diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 2mpPCBPDBq, and other heteroaromatic compounds having a quinoxaline ring.

[0304] In addition to the heteroaromatic compounds described above, the electron transport layer may also include the following metal complexes: tris(8-quinolinolato)aluminum(III) (abbreviation: Alq ３ ), Almq ３ , 8-quinolinolato-lithium (abbreviation: Liq), BeBq ２metal complexes having a quinoline ring or a benzoquinoline ring, such as bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq) and bis(8-quinolinolato)zinc(II) (abbreviation: Znq); and metal complexes having an oxazole ring or a thiazole ring, such as bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO) and bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ).

[0305] Furthermore, polymer compounds such as poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviation: PF-Py), and poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2′-bipyridine-6,6′-diyl)] (abbreviation: PF-BPy) can also be used as the electron transport material.

[0306] The electron transport layer may have not only a single layer structure but also a laminate structure of two or more layers made of the above-mentioned substances.

[0307] <Configuration of Electron Injection Layer> The electron injection layer 115 may be formed of lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF ２ Alternatively, a layer containing an alkali metal, alkaline earth metal, or rare earth metal, such as lithium (8-quinolinolato) (abbreviation: Liq), ytterbium (Yb), or a compound or complex thereof, may be provided. The electron injection layer 115 may be a layer made of a substance having electron transport properties containing an alkali metal, alkaline earth metal, or a compound thereof, or may be an electride. Examples of the electride include a mixed oxide of calcium and aluminum to which electrons are added at a high concentration.

[0308] Note that a layer containing a substance having an electron transport property (preferably an organic compound having a bipyridine skeleton) containing a fluoride of the alkali metal or alkaline earth metal at a concentration (50 wt % or more) that results in a microcrystalline state can also be used as the electron-injection layer 115. Since this layer has a low refractive index, it is possible to provide a light-emitting device with better external quantum efficiency.

[0309] The organic compound of one embodiment of the present invention described in Embodiment 1 can be used for the electron-injection layer 115. The electron-injection layer 115 may include a substance having an electron-transport property in addition to the organic compound of one embodiment of the present invention described in Embodiment 1.

[0310] <<Configuration of the Second Electrode>> The second electrode 102 is an electrode including a cathode. The second electrode 102 may have a stacked structure, in which case the layer in contact with the organic compound layer 103 functions as the cathode. Materials that form the cathode include metals, alloys, electrically conductive compounds, and mixtures thereof that have a low work function (specifically, 3.8 eV or less). Specific examples of such cathode materials include alkali metals such as lithium (Li) or cesium (Cs), elements belonging to Group 1 or Group 2 of the periodic table such as magnesium (Mg), calcium (Ca), and strontium (Sr), alloys containing these elements (MgAg, AlLi), rare earth metals such as europium (Eu) and ytterbium (Yb), and alloys containing these elements. However, by providing an electron injection layer between the second electrode 102 and the electron transport layer, various conductive materials such as Al, Ag, ITO, indium oxide-tin oxide containing silicon or silicon oxide can be used as the cathode regardless of the magnitude of the work function.

[0311] Note that when the second electrode 102 is formed using a material that is transparent to visible light, a light-emitting device that emits light from the second electrode 102 side can be obtained.

[0312] These conductive materials can be formed into films by dry methods such as vacuum deposition or sputtering, inkjet methods, spin coating methods, etc. Alternatively, they may be formed by wet methods using a sol-gel method, or by wet methods using a paste of a metal material.

[0313] <<Configuration of Intermediate Layer>> First, materials that can be used for the intermediate layer 160 will be described. It is preferable to use the same configuration as the electron injection layer described in Embodiment 1 for the intermediate layer 160. It is more preferable that the intermediate layer 160 has a stacked structure including a first layer 161 and a second layer 162, and it is preferable that the first layer 161 has the same configuration as the electron injection layer described in Embodiment 1. With such a configuration, the intermediate layer can be resistant to oxygen or water in the atmosphere during processing using lithography, chemical solutions or water during the process, and the like.

[0314] The second layer 162 is located closer to the second electrode 102 than the first layer 161. A third layer 163 may be provided between the first layer 161 and the second layer 162 in order to facilitate transfer of electrons between the two layers.

[0315] Note that because the intermediate layer 160 includes the first layer 161, the first layer 161 serves as an electron injection layer in the light-emitting unit on the anode side. Therefore, the light-emitting unit on the anode side (first light-emitting unit 501 in FIG. 1B ) may or may not have an electron injection layer. Similarly, because the intermediate layer 160 includes the second layer 162, the second layer 162 serves as a hole injection layer in the light-emitting unit on the cathode side. Therefore, the light-emitting unit on the cathode side (second light-emitting unit 502 in FIG. 1B ) may or may not have a hole injection layer.

[0316] Note that when the first layer 161 is not easily affected by oxygen, water, chemicals, or the like, for example, when the light-emitting device of one embodiment of the present invention is manufactured by a method that does not involve a lithography process for processing an organic compound layer, a donor substance may be used for the first layer 161. Specific examples of the donor substance include alkali metals and alkali metal compounds. Specific examples of alkali metals include lithium, sodium, potassium, rubidium, cesium, and francium. Specific examples of alkali metal compounds include compounds of the aforementioned alkali metals, such as lithium compounds such as lithium oxide.

[0317] Among the alkali metals or alkali metal compounds mentioned above, it is preferable to use lithium or a lithium compound, and specific examples that can be used include lithium, lithium complexes, lithium compounds, and lithium alloys.Specific examples include lithium, lithium oxide, lithium nitride, lithium carbonate, lithium fluoride, and lithium complexes containing alkyl groups such as 8-quinolinolato-lithium (abbreviated as Liq) and 2-methyl-8-quinolinolato-lithium (abbreviated as Li-mq).

[0318] When an alkali metal or an alkali metal compound is used for the first layer 161, an organic compound having an electron-transporting property may be included in addition to the alkali metal or the alkali metal compound. In this case, the organic compound having an electron-transporting property that can be used for the electron-injection layer described in Embodiment 1 can be used as the organic compound having an electron-transporting property.

[0319] The second layer preferably includes a layer containing a third organic compound and a layer containing a fourth organic compound (details of which will be described later), which is preferable because it allows for good hole injection into the upper light-emitting layer.

[0320] [Third Organic Compound] The third organic compound is preferably an organic compound having hole transport properties. As the organic compound having hole transport properties, various organic compounds such as aromatic amine compounds, heteroaromatic compounds, aromatic hydrocarbons, and polymer compounds (oligomers, dendrimers, polymers, etc.) can be used. Note that the organic compound having hole transport properties is preferably an organic compound having a molecular weight of 1×10 −６ cm ２ The organic compound having hole transport properties is preferably an organic compound having a hole mobility of 1 / Vs or more. The organic compound having hole transport properties is preferably a compound having a fused aromatic hydrocarbon ring or a π-electron-rich heteroaromatic ring. As the fused aromatic hydrocarbon ring, an anthracene ring, a naphthalene ring, or the like is preferred. Furthermore, as the π-electron-rich heteroaromatic ring, a fused aromatic ring containing at least one of a pyrrole skeleton, a furan skeleton, and a thiophene skeleton in the ring is preferred, and specifically, a carbazole ring, a dibenzothiophene ring, or a ring in which an aromatic ring or a heteroaromatic ring is further fused to the above ring is preferred.

[0321] Such organic compounds having hole-transporting properties preferably have a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, or an anthracene skeleton. In particular, aromatic amines having a substituent containing a dibenzofuran ring or a dibenzothiophene ring, aromatic monoamines having a naphthalene ring, or aromatic monoamines in which a 9-fluorenyl group is bonded to the nitrogen of the amine via an arylene group may be used. It is preferable that these organic compounds having hole-transporting properties are substances having an N,N-bis(4-biphenyl)amino group, since this allows the fabrication of light-emitting devices with a long lifetime.

[0322] Specific examples of the organic compound having hole transport properties as described above include N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4′-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4″-phenyltriphenylamine (abbreviation: BnfBB1BP), N,N-bis(4-biphenyl)benzylamine (abbreviation: BnfBB1BP), and N,N-bis(4-biphenyl)benzylamine (abbreviation: BnfBB1BP). N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-6-amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophen-4-yl)phenyl]-4-amino-p-terphenyl] ]-N-phenyl-4-biphenylamine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4',4''-diphenyltriphenylamine (abbreviation: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4'-diphenyl-4''-(6;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl-4''-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβ NB-03), 4,4'-diphenyl-4''-(7-phenyl)naphthyl-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-diphenyl-4''-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B), 4,4'-diphenyl-4''-(7;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-diphenyl-4''-(4;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB), 4,4'-Diphenyl-4''-(5;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenylyl)-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenylyl)-4'-[4-(2-naphthyl)phenyl] [4'-(3-phenyl-9H-carbazol-9-yl)biphenyl-4''-[ ... N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9′-spirobi[9H-fluorene]-2-amine (abbreviation: PCBNBSF), N,N- Bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: BBASF), N,N-bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: oFBiSF), N-(biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)dibenzofuran-4-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4' -[4-(9-phenylfluoren-9-yl)phenyl]triphenylamine (abbreviation: BPAFLBi), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'- Di(1-naphthyl)-4"-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviation: PCBBiF), N,N-bis( 9,9-dimethyl-9H-fluoren-2-yl)-9,9′-spirobi-9H-fluoren-4-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9′-spirobi-9H-fluoren-3-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9′-spirobi-9H-fluoren-2-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9′-spirobi-9H-fluoren-1-amine, etc.

[0323] In addition, examples of materials having hole transport properties that can be used include aromatic amine compounds such as N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviation: DNTPD), and 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B).

[0324] [Fourth Organic Compound] The fourth organic compound is preferably a material that has acceptor properties with respect to the third organic compound. As the substance that has acceptor properties, it is preferable to use an organic compound having an electron-withdrawing group (such as a halogen group or a cyano group), and it is more preferable to use an organic compound that has four or more halogen groups or at least one of cyano groups. A specific example is 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F ４ -TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviation: F ６-TCCNNQ), 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyren-2-ylidene)malononitrile, etc. In particular, a compound in which an electron-withdrawing group is bonded to a fused aromatic ring having a plurality of heteroatoms, such as HAT-CN, is thermally stable and therefore preferred. Furthermore, [3]radialene derivatives having an electron-withdrawing group (especially a halogen group such as a fluoro group, a cyano group, or the like) are preferred because of their extremely high electron-accepting properties. Specific examples include α,α',α''-1,2,3-cyclopropanetriylidenetris[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α',α''-1,2,3-cyclopropanetriylidenetris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], and α,α',α''-1,2,3-cyclopropanetriylidenetris[2,3,4,5,6-pentafluorobenzeneacetonitrile]. In addition to the organic compounds described above, other materials that can be used as acceptors include transition metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide.

[0325] The second layer preferably exhibits a signal observed by electron spin resonance. For example, the spin density resulting from a signal observed around a g value of 2.00 is 1×10 １７ spins / cm ３ More preferably, 1×10 １８ spins / cm ３ More preferably, 1×10 １９ spins / cm ３ The above is even more preferable. This allows the second layer to function as a charge generating layer. Also, a light-emitting device with low driving voltage and high efficiency can be fabricated.

[0326] A third layer may be provided between the first and second layers of the intermediate layer to facilitate the transfer of electrons between these two layers.

[0327] The third layer contains a substance having an electron-transporting property and has a function of smoothly transferring electrons by preventing interaction between the first layer and the second layer. The LUMO level of the substance having an electron-transporting property contained in the third layer 163 is preferably between the LUMO level of the acceptor substance in the second layer 162 and the LUMO level of the organic compound contained in the layer in contact with the intermediate layer 160 in the light-emitting unit on the first electrode 101 side (the first electron-transporting layer 114_1 in the first light-emitting unit 501 in FIG. 1B ). The specific energy level of the LUMO level of the substance having an electron-transporting property used for the third layer 163 is −5.0 eV or more, preferably −5.0 eV or more to −3.0 eV or less, more preferably −4.30 eV or more to −3.00 eV or less, and more preferably −4.30 eV or more to −3.30 eV or less, which is preferable because electrons generated in the second layer 162 can be easily injected into the first layer 161, thereby suppressing an increase in the driving voltage of the light-emitting device. Note that the substance having an electron-transporting property used for the third layer 163 is preferably a phthalocyanine-based material or a metal complex having a metal-oxygen bond and an aromatic ligand.

[0328] Specifically, perylene tetracarboxylic acid derivatives such as diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviation: HATNA), 2,3,8,9,14,15-hexafluorodiquinoxalino[2,3-a:2',3'-c]phenazine (abbreviation: HATNA-F6), 3,4,9,10-perylene tetracarboxylic acid diimide (abbreviation: PTCDI), and 3,4,9,10-perylene tetracarboxylic acid-bis-benzimidazole (abbreviation: PTCBI), (C60-Ih)[5,6]fullerene (abbreviation: C60), (C70-D5h)[5,6]fullerene (abbreviation: C70), and phthalocyanine (abbreviation: H ２Pc) can be used. Metal phthalocyanines containing copper, zinc, cobalt, iron, chromium, nickel, or the like, such as copper phthalocyanine (abbreviation: CuPc), zinc phthalocyanine (abbreviation: ZnPc), cobalt phthalocyanine (abbreviation: CoPc), iron phthalocyanine (abbreviation: FePc), tin phthalocyanine (abbreviation: SnPc), tin oxide phthalocyanine (abbreviation: SnOPc), titanium oxide phthalocyanine (abbreviation: TiOPc), and vanadium oxide phthalocyanine (abbreviation: VOPc), and derivatives thereof, can also be used. Phthalocyanine-based metal complexes, such as copper phthalocyanine or zinc phthalocyanine, or 2,3,8,9,14,15-hexafluorodiquinoxalino[2,3-a:2',3'-c]phenazine are particularly preferred.

[0329] The thickness of the third layer 163 is preferably 1 nm or more and 10 nm or less, more preferably 2 nm or more and 5 nm or less.

[0330] In addition, various methods, whether dry or wet, can be used to form the organic compound layer 103. For example, vacuum deposition, gravure printing, offset printing, screen printing, inkjet printing, spin coating, or the like may be used.

[0331] Furthermore, the above-mentioned electrodes or layers may be formed using different film formation methods.

[0332] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0333] Embodiment 4 In this embodiment, a display device according to one embodiment of the present invention will be described.

[0334] The display device of the present embodiment can be a high-definition display device, and can therefore be used, for example, as a display unit for a wristwatch-type or bracelet-type information terminal (wearable device), as well as a display unit for a wearable device that can be worn on the head, such as a head-mounted display (HMD) or a VR device, or a glasses-type AR device.

[0335] The display device of the present embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of the present embodiment can be used in electronic devices with relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproduction devices.

[0336] 10A shows a perspective view of a display module 280. The display module 280 includes a display device 100A and an FPC 290. Note that the display device included in the display module 280 is not limited to the display device 100A, and may be any of the display devices 100B to 100E2 described below.

[0337] The display module 280 has a substrate 291 and a substrate 292. The display module 280 has a display unit 281. The display unit 281 is a region that displays an image in the display module 280, and is a region where light from each pixel provided in a pixel unit 284 (described later) can be viewed.

[0338] 10B is a perspective view schematically illustrating the configuration on the substrate 291 side. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are stacked on the substrate 291. A terminal portion 285 for connecting to the FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel portion 284. The terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 composed of a plurality of wirings.

[0339] The pixel portion 284 has a plurality of periodically arranged pixels 284a. An enlarged view of one pixel 284a is shown on the right side of Fig. 10B. The various structures described in the above embodiments can be applied to the pixel 284a.

[0340] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0341] One pixel circuit 283a is a circuit that controls the driving of a plurality of elements included in one pixel 284a.

[0342] The circuit portion 282 includes a circuit for driving each pixel circuit 283 a of the pixel circuit portion 283. For example, it is preferable that the circuit portion 282 includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 282 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0343] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit portion 282. An IC may be mounted on the FPC 290.

[0344] The display module 280 can be configured such that one or both of the pixel circuit unit 283 and the circuit unit 282 are stacked below the pixel unit 284, thereby making it possible to extremely increase the aperture ratio (effective display area ratio) of the display unit 281.

[0345] Because such a display module 280 has extremely high resolution, it can be suitably used in VR devices such as HMDs or eyeglass-type AR devices. For example, even in a configuration in which the display unit of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display unit 281, so that even if the display unit is enlarged with the lens, the pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices having relatively small display units.

[0346] Display Device 100A A display device 100A shown in FIG. 11A includes a substrate 301, a light-emitting device 130R, a light-emitting device 130G, a light-emitting device 130B, a capacitor 240, and a transistor 310. The display device 100A shown in FIG.

[0347] The substrate 301 corresponds to the substrate 291 in FIGS. 10A and 10B . The transistor 310 is a transistor having a channel formation region in the substrate 301. The substrate 301 can be, for example, a semiconductor substrate such as a single crystal silicon substrate. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as a source or drain. The insulating layer 314 is provided to cover a side surface of the conductive layer 311.

[0348] An element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0349] In addition, an insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided over the insulating layer 261 .

[0350] The capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located therebetween. The conductive layer 241 functions as one electrode of the capacitor 240, the conductive layer 245 functions as the other electrode of the capacitor 240, and the insulating layer 243 functions as a dielectric of the capacitor 240.

[0351] The conductive layer 241 is provided over the insulating layer 261 and is buried in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and the drain of the transistor 310 by a plug 271 buried in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0352] An insulating layer 255 is provided to cover the capacitor 240, an insulating layer 174 is provided on the insulating layer 255, and an insulating layer 175 is provided on the insulating layer 174. Light-emitting device 130R, light-emitting device 130G, and light-emitting device 130B are provided on the insulating layer 175. An insulator is provided in the region between adjacent light-emitting devices.

[0353] An insulating layer 156R is provided to have a region overlapping with a side surface of the conductive layer 151R, an insulating layer 156G is provided to have a region overlapping with a side surface of the conductive layer 151G, and an insulating layer 156B is provided to have a region overlapping with a side surface of the conductive layer 151B. Furthermore, a conductive layer 152R is provided to cover the conductive layer 151R and the insulating layer 156R, a conductive layer 152G is provided to cover the conductive layer 151G and the insulating layer 156G, and a conductive layer 152B is provided to cover the conductive layer 151B and the insulating layer 156B. A sacrificial layer 158R is located on the organic compound layer 103R, a sacrificial layer 158G is located on the organic compound layer 103G, and a sacrificial layer 158B is located on the organic compound layer 103B.

[0354] The conductive layer 151R, the conductive layer 151G, and the conductive layer 151B are electrically connected to one of the source and the drain of the transistor 310 by an insulating layer 243, an insulating layer 255, an insulating layer 174, a plug 256 embedded in the insulating layer 175, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. Various conductive materials can be used for the plugs.

[0355] Furthermore, a protective layer 131 is provided on the light-emitting devices 130R, 130G, and 130B. A substrate 120 is bonded to the protective layer 131 with a resin layer 122. For details of the components from the light-emitting device 130 to the substrate 120, refer to the second embodiment. The substrate 120 corresponds to the substrate 292 in FIG. 10A .

[0356] Fig. 11B is a modified example of the display device 100A shown in Fig. 11A. The display device shown in Fig. 11B has a colored layer 132R, a colored layer 132G, and a colored layer 132B, and the light-emitting device 130 has an area where it overlaps with one of the colored layers 132R, 132G, and 132B. In the display device shown in Fig. 11B, the light-emitting device 130 can emit, for example, white light. Furthermore, for example, the colored layer 132R can transmit red light, the colored layer 132G can transmit green light, and the colored layer 132B can transmit blue light.

[0357] [Display Device 100B] FIG. 12 shows a perspective view of the display device 100B, and FIG. 13 shows a cross-sectional view of the display device 100C.

[0358] The display device 100B has a configuration in which a substrate 352 and a substrate 351 are bonded together. In Fig. 12, the substrate 352 is indicated by a dashed line.

[0359] The display device 100B has a pixel portion 177, a connection portion 140, a circuit 356, wiring 355, and the like. Fig. 12 shows an example in which an IC 354 and an FPC 353 are mounted on the display device 100B. Therefore, the configuration shown in Fig. 12 can also be called a display module having the display device 100B, an IC (integrated circuit), and an FPC. Here, a display device in which a connector such as an FPC is attached to a substrate, or a display device in which an IC is mounted on the substrate, is called a display module.

[0360] The connection portion 140 is provided outside the pixel portion 177. There may be one or more connection portions 140. The connection portion 140 electrically connects the common electrode of the light-emitting device and the conductive layer, and can supply a potential to the common electrode.

[0361] The circuit 356 can be, for example, a scanning line driver circuit.

[0362] The wiring 355 has a function of supplying signals and power to the pixel portion 177 and the circuit 356. The signals and power are input to the wiring 355 from the outside via the FPC 353 or from the IC 354.

[0363] 12 shows an example in which an IC 354 is provided on a substrate 351 by a chip-on-glass (COG) method, a chip-on-film (COF) method, or the like. For example, an IC having a scanning line driver circuit or a signal line driver circuit can be used as the IC 354. Note that the display device 100B and the display module may not include an IC. Alternatively, the IC may be mounted on an FPC by a COF method, for example.

[0364] Figure 13 shows an example of a cross section of the display device 100B in Figure 12, in which a portion of the region including the FPC 353, a portion of the circuit 356, a portion of the pixel portion 177, a portion of the connection portion 140, and a portion of the region including the end portion are cut away, as display device 100C.

[0365] [Display Device 100C] The display device 100C shown in Figure 13 has, between a substrate 351 and a substrate 352, a transistor 201, a transistor 205, a light-emitting device 130R that emits red light, a light-emitting device 130G that emits green light, and a light-emitting device 130B that emits blue light.

[0366] For details of the light emitting devices 130R, 130G, and 130B, refer to the second embodiment.

[0367] Light-emitting device 130R has conductive layer 224R, conductive layer 151R on conductive layer 224R, and conductive layer 152R on conductive layer 151R. Light-emitting device 130G has conductive layer 224G, conductive layer 151G on conductive layer 224G, and conductive layer 152G on conductive layer 151G. Light-emitting device 130B has conductive layer 224B, conductive layer 151B on conductive layer 224B, and conductive layer 152B on conductive layer 151B.

[0368] The conductive layer 224R is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214. An end of the conductive layer 151R is located outside an end of the conductive layer 224R. An insulating layer 156R is provided to have a region in contact with a side surface of the conductive layer 151R, and a conductive layer 152R is provided to cover the conductive layer 151R and the insulating layer 156R.

[0369] Conductive layer 224G, conductive layer 151G, conductive layer 152G, and insulating layer 156G in light-emitting device 130G, and conductive layer 224B, conductive layer 151B, conductive layer 152B, and insulating layer 156B in light-emitting device 130B are similar to conductive layer 224R, conductive layer 151R, conductive layer 152R, and insulating layer 156R in light-emitting device 130R, and therefore detailed description thereof will be omitted.

[0370] Recesses are formed in the conductive layers 224R, 224G, and 224B so as to cover the openings provided in the insulating layer 214. The layer 128 is buried in the recesses.

[0371] Layer 128 has the function of filling in recesses in conductive layer 224R, conductive layer 224G, and conductive layer 224B and planarizing the surface. Conductive layers 151R, 151G, and 151B, which are electrically connected to conductive layer 224R, conductive layer 224G, and conductive layer 224B, are provided on conductive layer 224R, conductive layer 224G, and conductive layer 224B and layer 128. Therefore, the regions overlapping with the recesses in conductive layer 224R, conductive layer 224G, and conductive layer 224B can also be used as light-emitting regions, thereby increasing the aperture ratio of the pixel.

[0372] The layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used as appropriate for the layer 128. In particular, the layer 128 is preferably formed using an insulating material, and is particularly preferably formed using an organic insulating material. For example, the organic insulating materials that can be used for the insulating layer 127 described above can be used for the layer 128.

[0373] A protective layer 131 is provided on the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B. The protective layer 131 and the substrate 352 are bonded via an adhesive layer 142. A light-shielding layer 157 is provided on the substrate 352. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light-emitting device 130. In FIG. 13 , the space between the substrate 352 and the substrate 351 is filled with the adhesive layer 142, and a solid sealing structure is applied. Alternatively, the space may be filled with an inert gas (nitrogen, argon, etc.), and a hollow sealing structure may be applied. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting device. Alternatively, the space may be filled with a resin different from the frame-shaped adhesive layer 142.

[0374] 13 shows an example in which connection portion 140 has conductive layer 224C obtained by processing the same conductive film as conductive layers 224R, 224G, and 224B, conductive layer 151C obtained by processing the same conductive film as conductive layers 151R, 151G, and 151B, and conductive layer 152C obtained by processing the same conductive film as conductive layers 152R, 152G, and 152B. Also shown in FIG. 13 is an example in which insulating layer 156C is provided so as to have a region overlapping with a side surface of conductive layer 151C.

[0375] The display device 100C is a top-emission type. Light emitted by the light-emitting device is emitted toward the substrate 352. The substrate 352 is preferably made of a material that is highly transparent to visible light. The pixel electrode contains a material that reflects visible light, and the counter electrode (common electrode 155) contains a material that transmits visible light.

[0376] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided over the substrate 351 in this order. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0377] The insulating layers 211, 213, and 215 are each preferably made of an inorganic insulating film.

[0378] The insulating layer 214 that functions as a planarizing layer is preferably an organic insulating layer.

[0379] The transistor 201 and the transistor 205 each include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a conductive layer 222a and a conductive layer 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate.

[0380] A connection portion 204 is provided in a region of the substrate 351 where the substrate 352 does not overlap. In the connection portion 204, a source electrode or a drain electrode of the transistor 201 is electrically connected to the FPC 353 via a conductive layer 166 and a connection layer 242. The conductive layer 166 has an example of a stacked structure including a conductive film obtained by processing the same conductive film as the conductive layers 224R, 224G, and 224B, a conductive film obtained by processing the same conductive film as the conductive layers 151R, 151G, and 151B, and a conductive film obtained by processing the same conductive film as the conductive layers 152R, 152G, and 152B. The conductive layer 166 is exposed on the top surface of the connection portion 204. This allows the connection portion 204 and the FPC 353 to be electrically connected via the connection layer 242.

[0381] It is preferable to provide a light-shielding layer 157 on the surface of the substrate 352 facing the substrate 351. The light-shielding layer 157 can be provided between adjacent light-emitting devices, on the connection section 140, on the circuit 356, etc. Various optical members can be disposed on the outside of the substrate 352.

[0382] The substrate 351 and the substrate 352 can be made of the same material as can be used for the substrate 120 .

[0383] The adhesive layer 142 can be made of a material that can be used for the resin layer 122 .

[0384] The connection layer 242 may be an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0385] [Display Device 100D] A display device 100D shown in FIG. 14 differs from the display device 100C shown in FIG. 13 mainly in that it is a bottom-emission display device.

[0386] Light emitted from the light-emitting device is emitted toward the substrate 351. A material that is highly transparent to visible light is preferably used for the substrate 351. On the other hand, the light-transmitting property of the material used for the substrate 352 does not matter.

[0387] A light-shielding layer 317 is preferably formed between the substrate 351 and the transistor 201 and between the substrate 351 and the transistor 205. In the example shown in FIG. 14, the light-shielding layer 317 is provided over the substrate 351, the insulating layer 153 is provided over the light-shielding layer 317, and the transistors 201, 205, and the like are provided over the insulating layer 153.

[0388] Light emitting device 130R includes conductive layer 112R, conductive layer 126R on conductive layer 112R, and conductive layer 129R on conductive layer 126R.

[0389] Light emitting device 130B includes conductive layer 112B, conductive layer 126B on conductive layer 112B, and conductive layer 129B on conductive layer 126B.

[0390] The conductive layers 112R, 112B, 126R, 126B, 129R, and 129B are each formed using a material that is highly transparent to visible light. The second electrode 102 is preferably formed using a material that reflects visible light.

[0391] Although the light emitting device 130G is not shown in FIG. 14, the light emitting device 130G is also provided.

[0392] Although FIG. 14 and other figures show an example in which the top surface of the layer 128 has a flat portion, the shape of the layer 128 is not particularly limited.

[0393] [Display Device 100D2] The display device 100D2 shown in Fig. 15 is an example of a bottom-emission type display device that differs from the display device 100D shown in Fig. 14. The display device 100D2 differs from the display device 100D in that it has an organic resin layer 180. Note that in the figure, the reference numerals of the same components as those in Fig. 14 may be omitted, and for details, please refer to the description in Fig. 14.

[0394] 15B shows a top view layout of a pixel 178 (pixel 178a and pixel 178b) having subpixels 110 (subpixels 110R, 110G, 110B, and 110W), and Fig. 15C shows a top view of the organic resin layer 180 in a region where the subpixels 110R and 110G of the pixel 178 are formed. Note that the distance between the light-shielding layers 317 is 110Rw in the light-emitting region of the subpixel 110R.

[0395] As shown in FIG. 15A , organic resin layer 180 is provided on insulating layer 214. As shown in the region surrounded by the dashed dotted line in FIG. 15A and in FIG. 15C , organic resin layer 180 has curved recesses 181 (recesses 181 a and 181 b) at least in the region where the subpixels are formed. Note that recesses 181 may be provided outside the light-emitting region, such as recess 181 c. Providing recess 181 c refracts light emitted in the region overlapping with light-shielding layer 317 or light traveling to the region overlapping with light-shielding layer 317, allowing it to be extracted from the light-emitting region, thereby improving light-emitting efficiency.

[0396] A plurality of recesses 181 may be formed in a matrix. Recesses 181a and 181b may be provided in contact with each other, or may have a flat surface therebetween.

[0397] 15, the recess has a hexagonal top surface shape (FIG. 15C) and a semicircular cross-sectional shape (FIG. 15A), but other shapes may be used as needed. For example, the recess may have a polygonal top surface shape such as a triangle, a quadrangle (including a rectangle and a square), a pentagon, or the like, a polygon with rounded corners, an ellipse, or a circle.

[0398] An insulating layer containing an organic material can be used as the organic resin layer 180. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenolic resin, precursors of these resins, etc. can be used as the organic resin layer 180. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can be used as the organic resin layer 180.

[0399] Furthermore, a photosensitive resin can be used as the organic resin layer 180. A photoresist can be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0400] The organic resin layer 180 may contain a material that absorbs visible light. For example, the organic resin layer 180 itself may be made of a material that absorbs visible light, or the organic resin layer 180 may contain a pigment that absorbs visible light. For example, the organic resin layer 180 may be made of a resin that can be used as a color filter that transmits red, blue, or green light and absorbs other light, or a resin that contains carbon black as a pigment and functions as a black matrix.

[0401] In addition, the first electrode 101 (the first electrode 101R and the first electrode 101W) is provided on the organic resin layer 180, and the organic compound layer 103 is provided on the first electrode 101. Ends of the first electrode 101 and the organic compound layer 103 may be covered with an insulating layer 127.

[0402] Furthermore, the first electrode 101 formed on the organic resin layer 180 has a recess similar to the recess of the organic resin layer 180. Furthermore, the organic compound layer 103 formed on the first electrode 101 has a recess similar to the recess of the first electrode 101. Furthermore, the common layer 104 formed on the organic compound layer 103 has a recess similar to the recess of the organic compound layer 103. Furthermore, the second electrode 102 formed on the common layer 104 has a recess similar to the recess of the common layer 104. That is, the recesses of the organic resin layer 180, the first electrode 101, the organic compound layer 103, the common layer 104, and the second electrode 102 have a structure in which they overlap one another.

[0403] In addition, a common layer 104 is provided over the organic compound layer 103 and the insulating layer 127, and a second electrode 102 is provided over the common layer 104. A protective layer 131 is provided over the second electrode 102, and the second electrode 102 is bonded to a substrate 352 via an adhesive layer 142.

[0404] Although the light emitting device 130G and the light emitting device 130B are not shown in FIG. 15, the light emitting device 130G and the light emitting device 130B are also provided.

[0408] [Display Device 100E] The display device 100E shown in FIG. 16 is a modification of the display device 100C shown in FIG. 13, and differs from the display device 100C mainly in that it has colored layers 132R, 132G, and 132B.

[0409] In the display device 100E, the light-emitting device 130 has an area that overlaps one of the colored layers 132R, 132G, and 132B. The colored layers 132R, 132G, and 132B can be provided on the surface of the substrate 352 facing the substrate 351. An end of the colored layer 132R, an end of the colored layer 132G, and an end of the colored layer 132B can overlap the light-shielding layer 157.

[0410] In the display device 100E, the light-emitting device 130 can emit, for example, white light. Furthermore, for example, the colored layer 132R can transmit red light, the colored layer 132G can transmit green light, and the colored layer 132B can transmit blue light. The display device 100E may be configured such that the colored layers 132R, 132G, and 132B are provided between the protective layer 131 and the adhesive layer 142.

[0411] [Display Device 100E2] The display device 100E2 shown in Fig. 17 is a modified example of the display device 100E shown in Fig. 16, and has microlenses 182 on the colored layers 132R, 132G, and 132B. Note that in the figure, the reference numerals of the same components as those in Fig. 16 may be omitted, and for details, the description in Fig. 16 may be referred to.

[0412] 17B shows a top view layout of a pixel 178 (pixel 178a and pixel 178b) having subpixels 110 (subpixels 110R, 110G, and 110B), and Fig. 17C shows a top view of a microlens 182 in a region where the subpixels 110R and 110G of the pixel 178 are formed. Note that the region where the common electrode 155 and the organic compound layer 103 are in contact has a width 110Gw in the light-emitting region of the subpixel 110G.

[0413] 175A has a planarization film 143 provided on a protective layer 131, and colored layers 132R, 132G, and 132B provided on the planarization film 144. The planarization film 144 is provided so as to cover the colored layers 132R, 132G, and 132B. A microlens 182 is provided on the planarization film 144.

[0414] As shown in FIG. 17C, the microlens 182 may be provided for each sub-pixel in the region where the sub-pixels are formed.

[0415] 17C, the top surface shape of the microlens 182 is shown as a hexagon, but other shapes may be used as needed. For example, the top surface shape of the recess may be a polygon such as a triangle, a quadrangle (including a rectangle and a square), a pentagon, or a polygon with rounded corners, an ellipse, or a circle.

[0416] The microlenses 182 can be formed using the same material as the organic resin layer 180 .

[0420] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0421] Embodiment 5 In this embodiment, an electronic device according to one embodiment of the present invention will be described.

[0422] The electronic devices of this embodiment include the display device of one embodiment of the present invention in a display portion. The display device of one embodiment of the present invention has low power consumption and high reliability. Therefore, the display device of one embodiment of the present invention can be used in the display portion of various electronic devices.

[0423] Examples of electronic devices include electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound playback devices.

[0424] An example of a wearable device that can be worn on the head will be described with reference to FIGS. 18A to 18D.

[0425] The electronic device 700A shown in FIG. 18A and the electronic device 700B shown in FIG. 18B each have a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0426] The display device of one embodiment of the present invention can be applied to the display panel 751. Therefore, the electronic device can be highly reliable.

[0427] Each of electronic device 700A and electronic device 700B can project an image displayed on display panel 751 onto display area 756 of optical member 753. Because optical member 753 is translucent, a user can see the image displayed in the display area superimposed on a transmitted image visually recognized through optical member 753.

[0428] Electronic device 700A and electronic device 700B may be provided with a camera capable of capturing an image in front of them as an imaging unit. Furthermore, electronic device 700A and electronic device 700B may each be provided with an acceleration sensor such as a gyro sensor, thereby detecting the orientation of the user's head and displaying an image corresponding to that orientation in display area 756.

[0429] The communication unit has a wireless communication device, and can supply, for example, a video signal via the wireless communication device. Note that instead of or in addition to the wireless communication device, a connector to which a cable through which a video signal and a power supply potential can be connected may be provided.

[0430] Furthermore, the electronic device 700A and the electronic device 700B are provided with batteries, which can be charged wirelessly and / or by wire.

[0431] The housing 721 may be provided with a touch sensor module.

[0432] Various touch sensors can be used as the touch sensor module. For example, various types of touch sensors can be used, such as a capacitance type, a resistive film type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, or an optical type. In particular, it is preferable to use a capacitance type or an optical type sensor in the touch sensor module.

[0433] The electronic device 800A shown in Figure 18C and the electronic device 800B shown in Figure 18D each have a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0434] The display device of one embodiment of the present invention can be applied to the display portion 820. Therefore, the electronic device can have high reliability.

[0435] The display unit 820 is provided inside the housing 821 at a position that can be viewed through the lens 832. In addition, by displaying different images on the pair of display units 820, it is possible to perform three-dimensional display using parallax.

[0436] It is preferable that electronic device 800A and electronic device 800B each have a mechanism that allows the left and right positions of lens 832 and display unit 820 to be adjusted so that they are optimally positioned according to the position of the user's eyes.

[0437] The mounting portion 823 allows the user to mount the electronic device 800A or the electronic device 800B on the head.

[0438] The imaging unit 825 has a function of acquiring external information. Data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used for the imaging unit 825. Furthermore, multiple cameras may be provided to support multiple angles of view, such as telephoto and wide-angle.

[0439] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone.

[0440] The electronic device 800A and the electronic device 800B may each have an input terminal to which a cable can be connected for supplying a video signal from a video output device or the like and power for charging a battery provided in the electronic device.

[0441] The electronic device of one embodiment of the present invention may have a function of wirelessly communicating with the earphone 750 .

[0442] 18B includes earphone unit 727. A portion of the wiring connecting earphone unit 727 and the control unit may be disposed inside housing 721 or attachment unit 723.

[0443] 18D includes an earphone unit 827. For example, the earphone unit 827 and the control unit 824 may be configured to be connected to each other by wire.

[0444] As such, as electronic devices according to one embodiment of the present invention, both glasses-type devices (such as the electronic devices 700A and 700B) and goggle-type devices (such as the electronic devices 800A and 800B) are suitable.

[0445] The electronic device 6500 shown in FIG. 19A is a portable information terminal that can be used as a smartphone.

[0446] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display portion 6502 has a touch panel function.

[0447] The display device of one embodiment of the present invention can be applied to the display portion 6502. Therefore, the electronic device can have high reliability.

[0448] FIG. 19B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0449] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, optical members 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0450] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by adhesive layers (not shown).

[0451] In a region outside the display portion 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0452] The display device of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. Furthermore, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while keeping the thickness of the electronic device small. Furthermore, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0453] 19C shows an example of a television set. A television set 7100 has a display portion 7000 built into a housing 7171. Here, the housing 7171 is supported by a stand 7173.

[0454] The display device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can have high reliability.

[0455] The television device 7100 shown in FIG. 19C can be operated using an operation switch provided on the housing 7171 and a separate remote control 7151.

[0456] 19D shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, and an external connection port 7214. The housing 7211 includes a display portion 7000.

[0457] The display device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can have high reliability.

[0458] 19E and 19F show an example of digital signage.

[0459] 19E includes a housing 7301, a display portion 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0460] 19F shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0461] 19E and 19F, the display device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can have high reliability.

[0462] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it will attract people's attention, which can increase the advertising effectiveness of, for example, advertisements.

[0463] Furthermore, as shown in Figures 19E and 19F, it is preferable that the digital signage 7300 or the digital signage 7400 be able to wirelessly link with an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user.

[0464] The electronic device shown in Figures 20A to 20G has a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including a function to measure force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 9008, etc.

[0465] 20A to 20G have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to control processing using various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc.

[0466] The electronic devices shown in FIGS. 20A to 20G will be described in detail below.

[0467] FIG. 20A is a perspective view showing a mobile information terminal 9171. The mobile information terminal 9171 can be used as, for example, a smartphone. Note that the mobile information terminal 9171 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, or the like. The mobile information terminal 9171 can display text and image information on multiple surfaces. FIG. 20A shows an example in which three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the title of the email or SNS message, the sender's name, the date and time, the remaining battery level, and radio wave intensity. Alternatively, the icon 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0468] 20B is a perspective view showing a mobile information terminal 9172. The mobile information terminal 9172 has a function of displaying information on three or more surfaces of the display portion 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, a user can check information 9053 displayed in a position that can be observed from above the mobile information terminal 9172 while the mobile information terminal 9172 is stored in a breast pocket of clothes.

[0469] 20C is a perspective view showing a tablet terminal 9173. The tablet terminal 9173 is capable of executing various applications such as mobile phone calls, e-mail, text browsing and creation, music playback, internet communication, and computer games, for example. The tablet terminal 9173 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front side of a housing 9000, operation keys 9005 as operation buttons on the left side of the housing 9000, and a connection terminal 9006 on the bottom.

[0470] FIG. 20D is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used as, for example, a smart watch (registered trademark). The display surface of the display unit 9001 is curved, and display can be performed along the curved display surface. The mobile information terminal 9200 can also perform hands-free calling by communicating with, for example, a wirelessly capable headset. The mobile information terminal 9200 can also perform data transmission and charging with another information terminal through a connection terminal 9006. Note that charging may be performed by wireless power supply.

[0471] 20E to 20G are perspective views showing a foldable mobile information terminal 9201. Also, FIG. 20E is a perspective view of the mobile information terminal 9201 in an unfolded state, FIG. 20G is a perspective view of the mobile information terminal 9201 in a folded state, and FIG. 20F is a perspective view of a state in the process of changing from one of FIG. 20E and FIG. 20G to the other. The mobile information terminal 9201 is highly portable when folded, and has a seamless, wide display area when unfolded, providing excellent visibility of the display. The display portion 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display portion 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0472] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0473] In this example, light-emitting device 1A (light-emitting device 1A-1 and light-emitting device 1A-2) and comparative light-emitting device 1B (light-emitting device 1B-1 and light-emitting device 1B-2) were fabricated.

[0474] The structural formulae of the organic compounds used in the light-emitting devices 1A and 1B are shown below.

[0475]

[0476] As shown in FIG. 21 , each light-emitting device has a structure in which a hole injection layer 911, a hole transport layer 912, a light-emitting layer 913, an electron transport layer 914, and an electron injection layer 915 are sequentially stacked on a first electrode 901 formed on a glass substrate 900, and a second electrode 902 is stacked on the electron injection layer 915.

[0477] <Method of Fabricating Light-Emitting Device 1A and Light-Emitting Device 1B> A 100 nm thick alloy of silver, palladium, and copper (APC: Ag-Pd-Cu) was formed on a glass substrate 900 as a reflective electrode, and then a 70 nm thick film of indium tin oxide containing silicon oxide (ITSO) was formed as a transparent electrode by sputtering to form a first electrode 901. The electrode area was 4 mm ２ (2 mm x 2 mm).

[0478] Next, as a pretreatment for forming a light-emitting device on the substrate, the surface of the substrate was washed with water and baked at 200°C for 1 hour. −４ The substrate was introduced into a vacuum deposition apparatus whose internal pressure had been reduced to about Pa, and vacuum baking was performed at 170°C for 30 minutes in a heating chamber of the vacuum deposition apparatus. Thereafter, the substrate was allowed to cool naturally to 30°C or below.

[0479] Next, the substrate on which the first electrode 901 was formed was fixed to a substrate holder provided in a vacuum evaporation apparatus so that the surface on which the first electrode 901 was formed faced downward. N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBBiF) and an electron acceptor material (OCHD-003) having a molecular weight of 672 and containing fluorine were co-deposited on the first electrode 901 to a thickness of 10.33 nm so that the weight ratio of PCBBiF:OCHD-003 was 1:0.03, thereby forming a hole injection layer 911.

[0480] Next, PCBBiF was evaporated on the hole injection layer 911 to a thickness of 96 nm to form a hole transport layer 912. Furthermore, PCBBiF was evaporated on the hole injection layer 911 to a thickness of 10 nm to form an electron blocking layer (not shown).

[0481] Next, [2-d3-methyl-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(5mppy-d3) ２ (mbfpypy-d3)), 8-(1,1':4',1''-terphenyl-3-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8mpTP-4mDBtPBfpm), and 9-(2-naphthyl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: βNCCP) were reacted with Ir(5mppy-d3) ２ A light-emitting layer 913 was formed by co-evaporation of (mbfpypy-d3):8mpTP-4mDBtPBfpm:βNCCP=0.1:0.6:0.4 (weight ratio) to a thickness of 42.1 nm.

[0482] Next, 2-{3-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}dibenzo[f,h]quinoxaline (abbreviation: 2mPCCzPDBq) was evaporated to a thickness of 10 nm on the light-emitting layer 913 to form a hole-blocking layer (not shown), and subsequently 2,2′-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P) was evaporated to a thickness of 10 nm to form an electron-transporting layer 914.

[0483] Here, after the glass substrate 900 was exposed to the atmosphere, an aluminum oxide (abbreviated as AlOx) film having a thickness of 30 nm was formed as a sacrificial layer by the ALD method.

[0484] Then, a molybdenum (abbreviated as Mo) film was formed by sputtering to a thickness of 50 nm. Then, a resist was formed using a photoresist, and the molybdenum was processed into a predetermined shape using lithography. Specifically, the molybdenum was processed to have a shape that encompassed the pixel electrode by 0.5 μm or more.

[0485] Next, using the molybdenum as a mask, the sacrificial layer and the organic compound layer consisting of the electron transport layer 914, the light emitting layer 913, the hole transport layer 912, and the hole injection layer 911 were processed into a predetermined shape. Thereafter, the molybdenum was removed by dry etching.

[0486] Subsequently, a 15 nm thick aluminum oxide film was formed as a protective layer on the sacrificial layer by the ALD method.

[0487] Next, a photosensitive polymer material was applied onto the protective layer, and then photolithography was used to remove the photosensitive polymer material in the area overlapping with the first electrode, forming an opening, thereby forming an LFP (Local Filling Planarization) structure.

[0488] Next, after heating at 100°C for 10 minutes in an air atmosphere, the protective layer and the sacrificial layer in the area exposed through the opening formed in the LFP were removed. At this time, the LFP made of a photosensitive polymer material functioned as a resist.

[0489] Here, different etchants were used for light-emitting devices 1A and 1B. Also, considering the tolerance for overtime during the process (hereinafter referred to as the process margin), the protective layer and sacrificial layer removal process was performed for a processing time that was 50% or 100% longer than the processing time required to remove the aluminum oxide film, which had a total thickness of 38 nm (actual measurement) of the protective layer and sacrificial layer. Note that although the total thickness of the 30 nm protective layer and the 15 nm sacrificial layer was 45 nm, some thinning of the sacrificial layer occurred during processing of the organic compound layer.

[0490] In other words, for the light-emitting device 1A-1, the protective layer and sacrificial layer were removed using an aqueous solution containing hydrofluoric acid and phosphoric acid as an etchant for a processing time of 320 seconds (the processing time required to remove aluminum oxide with a film thickness of 57 nm), which is 50% excess time.

[0491] Similarly to the light-emitting device 1A-1, the light-emitting device 1A-2 was treated with an aqueous solution containing hydrofluoric acid and phosphoric acid as an etchant. The protective layer and sacrificial layer were removed for 425 seconds (a treatment time sufficient to remove a 76-nm-thick aluminum oxide film), which was a 100% excess treatment time.

[0492] In addition, for the light-emitting device 1B-1, the protective layer and sacrificial layer were removed using an aqueous solution containing hydrofluoric acid and nitric acid as an etchant for a processing time of 260 seconds (the processing time required to remove aluminum oxide with a film thickness of 57 nm), which is 50% excess time.

[0493] Similarly to light-emitting device 1B-1, light-emitting device 1B-2 used an aqueous solution containing hydrofluoric acid and nitric acid as an etchant. On the other hand, light-emitting device 1A-2 had its protective layer and sacrificial layer removed for a treatment time of 345 seconds (a treatment time sufficient to remove a 76-nm-thick aluminum oxide film) with a 100% excess time.

[0494] The processing conditions for the light emitting device 1A and the light emitting device 1B are summarized in the table below.

[0495]

[0496] Next, for the light emitting device 1A and the light emitting device 1B, 1×10 −４ The sample was subjected to a heat treatment at 80° C. for 1.5 hours under a vacuum in which the internal pressure was reduced to about Pa. This heat treatment can remove moisture and the like that had adhered due to the above-mentioned processing or exposure to the atmosphere.

[0497] Next, in light-emitting device 1A and light-emitting device 1B, lithium fluoride (LiF) was evaporated to a thickness of 1 nm on the LFP and on the electron transport layer 914 exposed from the opening of the LFP to form an electron injection layer 915.

[0498] Next, aluminum (Al) was evaporated on the electron injection layer 915 to a film thickness of 200 nm to form a second electrode 902 .

[0499] Next, PCBBiF was evaporated onto the second electrode 902 by evaporation using resistance heating to a thickness of 80 nm, forming a cap layer (not shown).

[0500] The device structures and processing conditions of the light emitting devices 1A and 1B are summarized in the table below.

[0501]

[0502] <Cross-Section Observation of Light-Emitting Devices> The cross-sectional shapes of light-emitting devices 1A and 1B were observed using a scanning transmission electron microscope (STEM) HD2300 manufactured by Hitachi High-Technologies Corporation. Before the measurements, light-emitting devices 1A and 1B were coated with carbon (C) and platinum (Pt).

[0503] Fig. 22A shows a cross-sectional photograph of light-emitting device 1A-1, Fig. 22B shows a cross-sectional photograph of light-emitting device 1A-2, Fig. 23A shows a cross-sectional photograph of light-emitting device 1B-1, and Fig. 23B shows a cross-sectional photograph of light-emitting device 1B-2.

[0504] 22A, 22B, 23A, and 23B, it was confirmed that in all light-emitting devices, the sacrificial layer and protective layer removal process resulted in the disappearance of part of the sacrificial layer and protective layer in the area overlapping with the LFP.

[0505] 22A, the length LA-1 where the etchant is estimated to have penetrated under the LFP is approximately 150 nm, and the sacrificial layer and protective layer have disappeared in the corresponding region. Also, in FIG. 22B, the length LA-2 where the etchant is estimated to have penetrated under the LFP and the sacrificial layer and protective layer have disappeared is approximately 550 nm.

[0506] 23A, it is estimated that the etchant has penetrated under the LFP, and the length LB-1 at which the sacrificial layer and the protective layer have disappeared is approximately 700 nm. Also, in FIG. 23B, it was confirmed that the sacrificial layer and the protective layer have almost completely disappeared.

[0507] Therefore, it was found that when the sacrificial layer and protective layer formed using aluminum oxide are removed using an etchant containing hydrofluoric acid and nitric acid, the sacrificial layer and protective layer may disappear by slipping under the LFP that functions as a mask.

[0508] On the other hand, when sacrificial and protective layers made of aluminum oxide are removed using an etchant containing hydrofluoric acid and phosphoric acid, it has been found that the etching rate can be improved, the processing time can be shortened, and a wide process margin can be secured. The wide process margin allows for improved yield and greater design freedom.

[0509] <Device Characteristics> The light-emitting devices 1A and 1B were sealed with glass substrates in a nitrogen-atmosphere glove box to prevent the light-emitting devices from being exposed to the atmosphere (a sealant was applied to the periphery of the elements, and UV treatment and heat treatment at 80°C for 1 hour were performed during sealing), and then the characteristics of the light-emitting devices were measured. Note that, to check the variation in the characteristics of the light-emitting devices, eight samples were measured for each light-emitting device.

[0510] 10 mA / cm for light-emitting device 1A and light-emitting device 1B ２ The driving voltage at 10 mA / cm is shown in FIG. ２ The current efficiency at this time is shown in FIG.

[0511] 24 and 25, it is clear that the light emitting devices 1A and 1B have excellent characteristics with little variation between the light emitting devices.

[0512] From the above, it was found that the light emitting device 1A, which uses an aqueous solution containing hydrofluoric acid and phosphoric acid as an etchant, has a high etching rate and a wide process margin, and is an excellent light emitting device.

[0513] Therefore, it was found that light-emitting devices can be manufactured with high yield by using one embodiment of the present invention.

[0514] 100: display device, 100A: display device, 100B: display device, 100C: display device, 100D: display device, 100E: display device, 101: first electrode, 101W: first electrode, 102: second electrode, 103: organic compound layer, 103B: organic compound layer, 103Bf: organic compound film, 103G: organic compound layer, 103Gf: organic compound film, 103R: organic compound layer, 103Rf: organic compound film, 104: common layer, 110: subpixel, 110B: subpixel, 110G: subpixel, 110Gw: width, 110R: subpixel, 110Rw: width, 110W: subpixel, 111: Hole injection layer, 112: hole transport layer, 112_1: first hole transport layer, 112_2: second hole transport layer, 112B: conductive layer, 112R: conductive layer, 113: light emitting layer, 113_1: first light emitting layer, 113_2: second light emitting layer, 113_3: third light emitting layer, 113_4: fourth light emitting layer, 114: electron transport layer, 114_1: first electron transport layer, 114_2: second electron transport layer, 115: electron injection layer, 120: substrate, 122: resin layer, 125: inorganic insulating layer, 125f: inorganic insulating film, 126B: conductive layer, 126R: conductive layer, 127: insulating layer, 127a: insulating layer, 127f : insulating film, 128: layer, 129B: conductive layer, 129R: conductive layer, 130: light emitting device, 130B: light emitting device, 130G: light emitting device, 130R: light emitting device, 131: protective layer, 132B: colored layer, 132G: colored layer, 132R: colored layer, 140: connecting portion, 141: region, 142: adhesive layer, 143: planarizing film, 144: planarizing film, 151: conductive layer, 151a: conductive layer, 151B: conductive layer, 151b: conductive layer, 151C: conductive layer, 151c: conductive layer, 151f: conductive film, 151G: conductive layer, 151R: conductive layer, 152: conductive layer, 152a: conductive layer , 152B: conductive layer, 152b: conductive layer, 152C: conductive layer, 152c: conductive layer, 152f: conductive film, 152G: conductive layer, 152R: conductive layer, 153: insulating layer, 155: common electrode, 156: insulating layer, 156B: insulating layer, 156C: insulating layer, 156f: insulating film, 156G: insulating layer, 156R: insulating layer, 157: light-shielding layer, 158: sacrificial layer, 158B: sacrificial layer, 158Bf: sacrificial film, 158G: sacrificial layer, 158Gf: sacrificial film, 158R: sacrificial layer, 158Rf: sacrificial film, 159B: mask layer, 159Bf: mask film, 159G: mask layer, 159Gf: mask film,159R: mask layer, 159Rf: mask film, 160: intermediate layer, 160_1: first intermediate layer, 160_2: second intermediate layer, 160_3: ​​third intermediate layer, 161: first layer, 162: second layer, 163: third layer, 166: conductive layer, 171: insulating layer, 172: conductive layer, 173: insulating layer, 174: insulating layer, 175: insulating layer, 176: plug, 177: pixel portion, 178: pixel, 178a: pixel, 178b: pixel, 179: conductive layer, 180: organic resin layer, 181: recess, 181a: recess, 181b: recess, 181c: recess, 182: microlens, 190B: resin resist mask, 190G: resist mask, 190R: resist mask, 191: resist mask, 201: transistor, 204: connection portion, 205: transistor, 211: insulating layer, 213: insulating layer, 214: insulating layer, 215: insulating layer, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 224B: conductive layer, 224C: conductive layer, 224G: conductive layer, 224R: conductive layer, 231: semiconductor layer, 240: capacitor, 241: conductive layer, 242: connection layer, 243: insulating layer, 245: conductive layer, 254: insulating layer, 255: insulating layer, 256: plug, 26 1: insulating layer, 271: plug, 280: display module, 281: display section, 282: circuit section, 283: pixel circuit section, 283a: pixel circuit, 284: pixel section, 284a: pixel, 285: terminal section, 286: wiring section, 290: FPC, 291: substrate, 292: substrate, 301: substrate, 310: transistor, 311: conductive layer, 312: low resistance region, 313: insulating layer, 314: insulating layer, 315: element isolation layer, 317: light-shielding layer, 351: substrate, 352: substrate, 353: FPC, 354: IC, 355: wiring, 356: circuit, 501: first light-emitting unit, 502: second Light-emitting unit, 503: third light-emitting unit, 504: fourth light-emitting unit, 700A: electronic device, 700B: electronic device, 721: housing, 723: wearing section, 727: earphone section, 750: earphone, 751: display panel, 753: optical member, 756: display area, 757: frame, 758: nose pad, 800A: electronic device, 800B: electronic device, 820: display section, 821: housing, 822: communication section, 823: wearing section, 824: control section, 825: imaging section, 827: earphone section, 832: lens, 6500: electronic device, 6501: housing, 6502: display section,6503: power button, 6504: button, 6505: speaker, 6506: microphone, 6507: camera, 6508: light source, 6510: protective member, 6511: display panel, 6512: optical member, 6513: touch sensor panel, 6515: FPC, 6516: IC, 6517: printed circuit board, 6518: battery, 7000: display unit, 7100: television device, 7151: remote control device, 7171: housing, 7173: stand, 7200: notebook personal computer, 7211: housing, 7212: keyboard, 7213: pointing device, 7214: external connection port, 7 300: Digital signage, 7301: Housing, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal, 9000: Housing, 9001: Display unit, 9002: Camera, 9003: Speaker, 9005: Operation keys, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9171: Portable information terminal, 9172: Portable information terminal, 9173: Tablet terminal, 9200: Portable information terminal, 9201: Portable information terminal,

Claims

forming a first electrode on the insulating surface; forming an organic compound layer having at least a light-emitting layer on the first electrode; forming a sacrificial layer containing aluminum on the outermost surface of the organic compound layer; forming a mask on the sacrificial layer so as to overlap at least a portion of the first electrode; forming the sacrificial layer into an island shape by a lithography method using the mask; forming the organic compound layer in an island shape using the island-shaped sacrificial layer as a mask; exposing an outermost surface of the island-shaped organic compound layer by etching with an aqueous solution containing hydrofluoric acid and a Bronsted acid having a pH of 3 or more; The method for producing a light-emitting device further comprises forming a second electrode to cover the island-shaped organic compound layer. 　 forming a first electrode on the insulating surface; forming an organic compound layer having at least a light-emitting layer on the first electrode; forming a sacrificial layer containing aluminum on the outermost surface of the organic compound layer; forming a mask on the sacrificial layer so as to overlap at least a portion of the first electrode; forming the sacrificial layer into an island shape by a lithography method using the mask; forming the organic compound layer into an island shape using the island-shaped sacrificial layer as a mask; forming an organic insulating film having an opening in a region overlapping the first electrode; exposing an outermost surface of the island-shaped organic compound layer through the openings by etching with an aqueous solution containing hydrofluoric acid and a Bronsted acid having a pH of 3 or more; The method for producing a light-emitting device further comprises forming a second electrode to cover the island-shaped organic compound layer and the organic insulating film. 　 forming a first electrode on the insulating surface; forming an organic compound layer having at least a light-emitting layer on the first electrode; forming a sacrificial layer containing aluminum on the outermost surface of the organic compound layer; forming a mask on the sacrificial layer so as to overlap at least a portion of the first electrode; forming the sacrificial layer into an island shape by a lithography method using the mask; forming the organic compound layer into an island shape using the sacrificial layer as a mask; forming a protective layer containing aluminum to cover an upper surface and a side surface of the sacrificial layer and a side surface of the island-shaped organic compound layer; exposing an outermost surface of the organic compound layer by etching with an aqueous solution containing hydrofluoric acid and a Bronsted acid having a pH of 3 or more; The method for producing a light-emitting device further comprises forming a second electrode to cover the island-shaped organic compound layer. 　 forming a first electrode on the insulating surface; forming an organic compound layer having at least a light-emitting layer on the first electrode; forming a sacrificial layer containing aluminum on the outermost surface of the organic compound layer; forming a mask on the sacrificial layer so as to overlap at least a portion of the first electrode; forming the sacrificial layer into an island shape by a lithography method using the mask; forming the organic compound layer into an island shape using the island-shaped sacrificial layer as a mask; forming a protective layer containing aluminum to cover an upper surface and a side surface of the sacrificial layer and a side surface of the island-shaped organic compound layer; forming an organic insulating film on the protective layer, the organic insulating film having an opening in a region overlapping with the first electrode; exposing an outermost surface of the organic compound layer through the opening by etching with an aqueous solution containing hydrofluoric acid and a Bronsted acid having a pH of 3 or more; The method for producing a light-emitting device further comprises forming a second electrode to cover the organic insulating film and the island-shaped organic compound layer. 　 In any one of claims 1 to 4, The method for manufacturing a light-emitting device, wherein the organic compound layer is formed on the first electrode. In claim 3 or claim 4, A method for producing a light-emitting device, wherein a side surface of the organic compound layer is in contact with the protective layer. 　 In claim 3 or claim 4, The method of making a light emitting device, wherein the first electrode is in contact with the protective layer. 　 In any one of claims 1 to 4, The method for making a light emitting device, wherein the sacrificial layer or the protective layer is aluminum oxide. 　 In claim 1 or claim 4, The method for producing a light-emitting device, wherein the Bronsted acid having a pH of 3 or more is phosphoric acid. 　 In claim 2 or claim 4, The method for producing a light-emitting device, wherein the organic insulating film contains an acrylic resin.