Optical Modules and Transceivers

Abstract

The optical module according to the present disclosure comprises a stem having a main surface and a surface opposite to the main surface, a lead pin penetrating the stem from the main surface to the surface opposite to the main surface, a temperature control module mounted on the main surface of the stem, a dielectric substrate mounted on the side of the temperature control module opposite to the main surface of the stem, and a semiconductor optical integrated device mounted on the side of the dielectric substrate opposite to the temperature control module, the semiconductor laser and an optical amplifier.

Description

[Technical field]

[0001] The present disclosure relates to an optical module and an optical transceiver. [Background technology]

[0002] Patent Document 1 discloses an optical module including a conductive stem having a first surface and a second surface and a plurality of through holes penetrating between the first surface and the second surface, and a plurality of lead pins. The bottom surface of a thermoelectric cooler is fixed to the first surface of the conductive stem. A submount substrate having a wiring pattern on the surface opposite to the thermoelectric cooler is fixed to the top surface of the thermoelectric cooler. A signal wire electrically connects the tip surface of the signal lead pin to the wiring pattern of the submount substrate. A photoelectric device is mounted on the submount. The photoelectric device is a laser that emits light parallel to the first surface. The emitted light from the photoelectric device is reflected by a mirror in a direction intersecting the first surface. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2022-143753 A Summary of the Invention [Problem to be solved by the invention]

[0004] In a CAN-type optical module such as that in Patent Document 1, the optoelectronic device is not equipped with a function for amplifying modulated light. For this reason, there is a risk that sufficient optical output cannot be obtained. Furthermore, when an amplification function is installed, it is necessary to secure a mounting area in response to the expansion of the semiconductor optical integrated element and to add a power supply line, but it is difficult to secure the mounting area with the structure in Patent Document 1.

[0005] An object of the present disclosure is to provide an optical module and an optical transceiver capable of obtaining high optical output. [Means for solving the problem]

[0006] The optical module according to the present disclosure comprises: Single-faceted A stem having a main surface and a surface opposite to the main surface, and a wire passing through the stem from the main surface to the surface opposite to the main surface. and exposed from the stem at the main surface. The device includes a lead pin, a temperature control module mounted on the main surface of the stem, a dielectric substrate mounted on the temperature control module on the side opposite the main surface of the stem, and a semiconductor laser and an optical amplifier mounted on the dielectric substrate on the side opposite the temperature control module. The optical module according to the present disclosure comprises a stem having a main surface and a surface opposite to the main surface, a lead pin penetrating the stem from the main surface to the surface opposite to the main surface, a temperature control module mounted on the main surface of the stem, a dielectric substrate mounted on the temperature control module on the side of the stem opposite to the main surface, a semiconductor optical integrated device mounted on the dielectric substrate on the side opposite to the temperature control module and having a semiconductor laser and an optical amplifier, and an RF power supply lead pin provided on a raised portion formed on the main surface of the stem, wherein a GND metallization is formed on a side of the dielectric substrate and the GND metallization is connected to the raised portion via a wire. Effect of the Invention

[0007] In the optical module according to the present disclosure, a high optical output can be obtained by the optical amplifier. [Brief description of the drawings]

[0008] [Figure 1] 1 is a perspective view of an optical module according to a first embodiment. [Diagram 2] 1 is a cross-sectional view of a semiconductor optical integrated device according to a first embodiment. [Diagram 3] FIG. 2 is a front view of the optical module according to the first embodiment. [Figure 4] FIG. 1 is a plan view of an optical module according to a first embodiment. [Diagram 5] 4 is a diagram illustrating a connection state of a capacitor and a resistor according to the first embodiment. FIG. [Figure 6] FIG. 11 is a plan view of an optical module according to a second embodiment. [Figure 7] FIG. 11 is a perspective view of an optical module according to a third embodiment. [Figure 8] FIG. 11 is a cross-sectional view of a semiconductor optical integrated device according to a fourth embodiment. [Figure 9] FIG. 11 is a perspective view of an optical module according to a fourth embodiment. [Figure 10] FIG. 1 is a diagram illustrating an optical element according to a first embodiment. [Figure 11]13 is a diagram illustrating an optical element according to a fifth embodiment. FIG. [Figure 12] 13 is a diagram illustrating a light receiving element according to a sixth embodiment. FIG. [Figure 13] 13 is a cross-sectional view showing a state in which the optical module according to the seventh embodiment is connected to a receptacle. FIG. [Figure 14] FIG. 13 is a perspective view of an optical transceiver according to a seventh embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] An optical module and an optical transceiver according to each embodiment will be described with reference to the drawings. The same or corresponding components are designated by the same reference numerals, and the repeated description may be omitted.

[0010] Embodiment 1 FIG. 1 is a perspective view of an optical module 100 according to a first embodiment. The optical module 100 includes a stem 1 having a main surface and a surface opposite to the main surface. The stem 1 is made of metal. The stem 1 is a metal material in which, for example, Au plating is applied to the surface of a material with high thermal conductivity such as Cu, and is also called a stem base. The stem 1 is circular in plan view and formed in a plate shape. The stem 1 fixes a temperature control module 5 (to be described later) and plays a role in releasing heat absorbed by the temperature control module 5 to a side surface of the stem 1 and a cooling member (not shown) on the negative side of the Z axis. The Z axis is perpendicular to the main surface of the stem 1.

[0011] The multiple lead pins penetrate the stem 1 from the main surface to the surface opposite the main surface. The multiple lead pins include a DC power supply lead pin 2 and an RF power supply lead pin 3. To fix the lead pins to the stem 1, glass is generally applied to the through holes in the stem 1. The RF power supply lead pin 3, which passes an electric signal, is made of a material with a low dielectric constant so that it has the same impedance as the signal generator. This is because impedance mismatching causes multiple reflections of the signal to deteriorate the frequency response characteristics, making high-speed modulation difficult.

[0012] A raised portion 4 is formed on the main surface of the stem 1. The RF power supply lead pin 3 is provided on the raised portion 4 and protrudes from the raised portion 4. Because the glass is provided up to near the upper surface of the raised portion 4, the portion of the RF power supply lead pin 3 that protrudes from the glass surface can be shortened. The longer the portion of the RF power supply lead pin 3 that protrudes from the glass surface, the greater the impedance mismatch and the more likely the high-frequency characteristics are to deteriorate. In this way, the high-frequency characteristics can be improved by the raised portion 4.

[0013] In order to seal and fix the DC power supply lead pin 2 and the RF power supply lead pin 3 to the stem 1 with glass, a compression method or a matching method is generally used. In order to maintain airtightness, it is important that the multiple lead pins are under equal pressure during sealing. For this reason, it is desirable that the multiple lead pins are arranged in a circular shape on the stem 1. Also, if the lead pins are too close to each other, the sealing performance deteriorates. For this reason, a certain distance is required between the lead pins. In this embodiment, as an example, seven lead pins are arranged in a circular shape at equal intervals.

[0014] A temperature control module 5 is mounted on the main surface of the stem 1. The temperature control module 5 is composed of, for example, a plurality of blocks and an upper substrate 5a and a lower substrate 5b that sandwich the plurality of blocks. The blocks are formed, for example, from a material such as BiTe (bismuth telluride). The upper substrate 5a and the lower substrate 5b are formed, for example, from a material such as AlN (aluminum nitride). The temperature control module 5 dissipates heat received from the semiconductor optical integrated device 10 mounted on the upper substrate 5a from the lower substrate 5b to the stem 1 side.

[0015] The stem 1 and the lower substrate 5b of the temperature control module 5 are bonded together. As a bonding material, for example, solder using a material such as AuSn, or an adhesive such as resin is used.

[0016] The oscillation wavelength of the semiconductor optical integrated device 10 changes with temperature changes. For this reason, it is desirable to keep the temperature of the semiconductor optical integrated device 10 constant. The temperature control module 5 cools the semiconductor optical integrated device 10 when the temperature rises, and generates heat when the temperature drops. This makes it possible to keep the temperature of the semiconductor optical integrated device 10 constant.

[0017] A dielectric substrate 6 is mounted on the temperature control module 5 on the side opposite to the main surface of the stem 1. Specifically, the dielectric substrate 6 is mounted on the surface of the upper substrate 5a of the temperature control module 5. The dielectric substrate 6 is plate-shaped. The dielectric substrate 6 is formed by, for example, plating the surface of a ceramic material such as aluminum nitride (AlN) with Au and metalizing it. The dielectric substrate 6 fixes the semiconductor optical integrated device 10 and also plays a role in dissipating heat generated in the semiconductor optical integrated device 10 to a cooling member on the negative Z-axis side of the stem 1. In addition to this heat transfer function, the dielectric substrate 6 also plays an electrical insulation function. The dielectric substrate 6 is also located higher in the positive Z-axis direction than the raised portion 4. This makes it possible to avoid interference between the dielectric substrate 6 and the raised portion 4.

[0018] FIG. 2 is a cross-sectional view of a semiconductor optical integrated device 10 according to the first embodiment. The semiconductor optical integrated device 10 is mounted on the dielectric substrate 6 on the side opposite to the temperature control module 5. The semiconductor optical integrated device 10 has a semiconductor laser 7, an optical modulator 8, and an optical amplifier 9. The semiconductor laser 7, the optical modulator 8, and the optical amplifier 9 are formed adjacent to each other, but are electrically independent. The semiconductor laser 7, the optical modulator 8, and the optical amplifier 9 are electrically insulated from each other by a semi-insulating substrate such as Fe-doped InP, and current can be passed independently, resulting in high current controllability. The semiconductor laser 7, the optical modulator 8, and the optical amplifier 9 share a common GND.

[0019] The semiconductor optical integrated device 10 emits laser light parallel to the main surface of the stem 1. The main ray of the laser light emitted from the front end face of the semiconductor optical integrated device 10 is emitted obliquely with respect to the main axis of the semiconductor optical integrated device 10. Here, the main axis of the semiconductor optical integrated device 10 is a direction along the long side of the semiconductor optical integrated device 10, which is the Y-axis direction in FIG.

[0020] 1, a high-frequency transmission line 6a, which is an RF power supply metallization, is formed on a dielectric substrate 6. One end of the high-frequency transmission line 6a is connected to an optical modulator 8 by a conductive wire, and the other end is connected to an RF power supply lead pin 3 by a conductive wire. The high-frequency transmission line 6a may be connected to the RF power supply lead pin 3 by solder or a conductive adhesive. The shorter the conductive wire, the more the inductance component is reduced, and better high-frequency characteristics are obtained.

[0021] The high-frequency transmission line 6a is a microstrip or coplanar and has an impedance equivalent to the output impedance of the signal generator. When an electrical signal is input to the RF power supply lead pin 3, the electrical signal is applied to the optical modulator 8 via the conductive wire and the high-frequency transmission line 6a. The electrical signal input to the RF power supply lead pin 3 is electromagnetically coupled to the stem 1 and the raised portion 4, and the stem 1, the raised portion 4, and the GND electrode pattern of the dielectric substrate 6 act as an AC ground.

[0022] In this embodiment, the optical amplifier 9 is formed in the semiconductor optical integrated device 10. This makes it possible to obtain a high optical output. On the other hand, the formation of the optical amplifier 9 increases the overall length of the semiconductor optical integrated device 10. For example, when providing an optical amplifier in an optical module such as that of Patent Document 1, it is necessary to enlarge the submount substrate. Particularly in Patent Document 1, in order to improve high-frequency characteristics, the mounting area in which the thermoelectric cooler is mounted is lowered relative to the reference area in which multiple lead pins are arranged. Therefore, the mounting area is small. In this case, if the submount substrate is enlarged, the area protruding from the temperature control module is enlarged, and the thermal resistance between the submount substrate and the temperature control module is increased. For this reason, it may be difficult to apply the optical amplifier 9.

[0023] In contrast, in this embodiment, the surface of the stem 1 from which the lead pins protrude and the surface on which the temperature control module 5 is provided are at the same height. This allows a large mounting space to be secured. Therefore, even when a large semiconductor optical integrated device 10 with an optical amplifier 9 is provided, the area protruding from the upper substrate 5a of the dielectric substrate 6 can be reduced. This allows the thermal resistance between the dielectric substrate 6 and the temperature control module 5 to be suppressed. Furthermore, in this embodiment, the protruding portion 4 can shorten the portion of the RF power supply lead pin 3 protruding from the glass surface. Furthermore, the conductive wire connected to the RF power supply lead pin 3 can be shortened. This allows the high frequency characteristics to be improved while securing a large mounting space.

[0024] The thermistor 12 indirectly observes the temperature of the semiconductor optical integrated device 10. The thermistor 12 is configured to feed back the observed temperature to the temperature control module 5 and to cool the semiconductor optical integrated device 10 if the temperature is higher than the target value, and to generate heat if the temperature is lower than the target value. This makes it possible to stabilize the temperature of the semiconductor optical integrated device 10. The thermistor 12 may be mounted on the surface of either the upper substrate 5a or the dielectric substrate 6.

[0025] A GND electrode pattern 6b is formed on the surface of the dielectric substrate 6 and is connected to the stem surface via a conductive wire 30. A GND electrode pattern 6c, which is GND metallization, is formed on the side of the dielectric substrate 6 and is electrically connected to the front and back surfaces of the dielectric substrate 6 and the front electrode patterns of the upper substrate 5a.

[0026] The GND electrode pattern 6c is connected to the side of the protuberance 4 via the conductive wire 31. This strengthens the GND of the dielectric substrate 6 and stabilizes the potential. Therefore, the high frequency characteristics can be improved. In addition, if the upper substrate 5a is a substrate made of a ceramic material like the dielectric substrate 6, the potential of the upper substrate 5a becomes unstable and electromagnetic field resonance is likely to occur. For this reason, it is desirable to connect a conductive wire between the surface electrode of the upper substrate 5a and the stem 1. However, if the number of conductive wires for GND connection increases, the amount of heat transferred from the stem 1 through the conductive wires increases when the environmental temperature changes. This increases the amount of heat absorbed by the temperature control module 5, which may increase power consumption. Therefore, it is better to reduce the number of conductive wires if possible.

[0027] The GND of the back surface of the dielectric substrate 6 and the upper substrate 5a is far from the GND of the stem 1, and therefore the potential is likely to become unstable. In order to strengthen the GND, a through via may be provided in the dielectric substrate 6, and the GND electrodes on the front and back surfaces of the dielectric substrate 6 may be electrically connected through the through via.

[0028] An optical element 13 is further mounted on the upper substrate 5a. The optical element 13 reflects the laser light perpendicular to the main surface of the stem 1. The main ray of the laser light is emitted in a direction oblique to the main axis of the semiconductor optical integrated device 10. The optical element 13 is oriented obliquely to the main axis of the semiconductor optical integrated device 10 so as to receive the main ray of the semiconductor optical integrated device 10. The optical element 13 reflects a part of the light intensity of the laser light emitted from the semiconductor optical integrated device 10 in a direction perpendicular to the main surface of the stem 1, and transmits a part of the light intensity.

[0029] The material of the optical element 13 is, for example, glass made of SiO2. The optical element 13 is bonded to the upper substrate 5a. For example, an epoxy resin adhesive is used as the bonding material. The epoxy resin is temporarily cured by ultraviolet light irradiation immediately after bonding, and then thermally cured through a heat treatment process. This completes the bonding.

[0030] A support block 14 is mounted on the main surface of the stem 1 on the rear side of the optical element 13. Electrode patterns are formed on the front and side surfaces of the support block 14. A light receiving element 15 that receives the laser light transmitted by the optical element 13 is mounted on the GND surface of the support block 14. In other words, the light receiving element 15 is disposed on the opposite side of the optical element 13 to the semiconductor optical integrated element 10. The support block 14 is formed of a ceramic material such as aluminum nitride (AlN), for example.

[0031] The optical signal received by the light receiving element 15 is O / E converted into an electrical signal. The electrical signal is transmitted to the DC power supply lead pin 2 via the conductive wire and the electrode pattern formed on the support block 14. This makes it possible to monitor the intensity of the light emitted from the semiconductor optical integrated element 10. Therefore, the drive current to the semiconductor laser 7 and the optical amplifier 9 can be controlled so that the optical output intensity is constant.

[0032] In a structure such as that of Patent Document 1, which has a small mounting area, it is expected that it will be difficult to secure a space for mounting a light receiving element. In addition, in the structure of Patent Document 1, it is necessary to place a lead pin in a reference area, which is a protrusion provided on the conductive stem. Therefore, even if an optical amplifier or a light receiving element is to be provided, it may be difficult to secure an area for adding a lead pin connected to these. In contrast, in the present embodiment, a large mounting space is secured, making it possible to provide an optical module 100 equipped with an optical amplifier 9 and a function for monitoring the intensity of emitted light.

[0033] Fig. 3 is a front view of the optical module 100 according to the first embodiment. Fig. 3 shows a state in which the cap 16 is joined to the stem 1. The cap 16 has a lens 17. The lens 17 is, for example, glass made of SIO2. The lens 17 has a function of substantially focusing or collimating the laser light emitted from the semiconductor optical integrated device 10 and reflected by the optical element 13 in a direction perpendicular to the main surface of the stem 1. According to the configuration shown in Fig. 3, it is possible to ensure the airtightness of the structure mounted on the stem 1, and to improve the moisture resistance and disturbance resistance.

[0034] Fig. 4 is a plan view of the optical module 100 according to the first embodiment. Fig. 5 is a diagram for explaining the connection state of the capacitor and resistor according to the first embodiment. The connection of the capacitor and resistor will be explained using Figs. 4 and 5. The DC power supply lead pins 2a, 2d, 2e, and 2f are connected to a common GND. The anode and cathode of the temperature control module 5 are connected to the DC power supply lead pins 2b and 2c, respectively, and are independent of the other lead pins.

[0035] The optical module 100 includes a capacitor 20 that connects the semiconductor laser 7 to GND. The capacitor 20 is mounted on the surface electrode pattern of the upper substrate 5a, which is GND. The capacitor 20 connects the DC power supply lead pin 2f to the anode of the semiconductor laser 7 via a conductive wire. The capacitor 20 can cut power supply noise. The capacitor 20 may be mounted on the surface of any one of the stem 1, the DC power supply lead pin 2, or the dielectric substrate 6.

[0036] The optical module 100 may include a matching resistor 11 connected in parallel with the optical modulator 8. This allows the maximum voltage amplitude from the signal generator to be obtained. The matching resistor 11 is provided, for example, on the dielectric substrate 6, and is connected to the optical modulator 8 by a conductive wire.

[0037] The optical module 100 may include a capacitor 21 connected in parallel to the optical modulator 8. The capacitor 21 is mounted on the dielectric substrate 6. The capacitor 21 and the matching resistor 11 are connected in series. A series circuit formed by the capacitor 21 and the matching resistor 11 is connected in parallel to the optical modulator 8. The RF power supply lead pin 3, the high-frequency transmission line 6a on the dielectric substrate 6, the optical modulator 8, the matching resistor 11, and the capacitor 21 are connected via conductive wires. The capacitor 21 is connected to the electrode pad of the matching resistor 11 by a conductive wire. The capacitor 21 can be used as an AC coupling method in which the DC component flowing through the matching resistor 11 is cut.

[0038] The optical module 100 includes a capacitor 22 that connects the optical amplifier 9 to GND. The capacitor 22 is mounted on the main surface of the stem 1. The capacitor 22 connects the DC power supply lead pin 2e and the anode of the optical amplifier 9 via a conductive wire. The capacitor 22 can cut power supply noise. The capacitor 22 may be mounted on any one of the surfaces of the DC power supply lead pin 2, the upper substrate 5a, or the dielectric substrate 6.

[0039] The optical module 100 may also include a protective resistor 19 connected in parallel with the optical modulator 8. The protective resistor 19 has a resistance value larger than that of the matching resistor 11, and is preferably, for example, about 1 kΩ. If a capacitor 21 is connected between the matching resistor 11 and GND, the optical modulator 8 may be easily charged and may easily break down. Therefore, the protective resistor 19 may be connected in parallel with the series circuit formed by the capacitor 21 and the matching resistor 11 and the optical modulator 8. Since the resistance value of the protective resistor 19 is larger than that of the matching resistor 11, a current flows through the protective resistor 19 when a surge is input. Therefore, it is possible to prevent the optical modulator 8 from breaking down.

[0040] In the present embodiment, an example has been described in which the semiconductor optical integrated device 10 includes the optical modulator 8. However, the present invention is not limited to this, and the semiconductor optical integrated device 10 may not include the optical modulator 8 as long as it includes the semiconductor laser 7 and the optical amplifier 9.

[0041] The above-mentioned modifications can be appropriately applied to the optical modules and optical transceivers according to the following embodiments. Note that the optical modules and optical transceivers according to the following embodiments have many points in common with the first embodiment, so the following description will focus on the differences from the first embodiment.

[0042] Embodiment 2 FIG. 6 is a plan view of an optical module 200 according to the second embodiment. When mounting the temperature control module 5, the dielectric substrate 6, and the semiconductor optical integrated device 10, it is necessary to take care that there is no interference with the DC power supply lead pin 2 and the protuberance 4. It is also necessary to take care that the mounting area of ​​the cap 16 is secured, and that the main ray of the laser light reflected by the optical device 13 is located near the center of the stem 1. In the first embodiment, the components are arranged as shown in FIG. 4 in consideration of these factors. On the other hand, in the first embodiment, the sides of the temperature control module 5 and the sides of the dielectric substrate 6 are aligned in the same direction. At this time, the part of the dielectric substrate 6 on which the semiconductor optical integrated device 10 is mounted protrudes slightly from the temperature control module 5. This narrows the heat radiation area from the semiconductor optical integrated device 10, increasing the thermal resistance, and there is a possibility that the power consumption of the temperature control module 5 increases.

[0043] In contrast, in this embodiment, the temperature control module 5 is inclined with respect to the main axis of the semiconductor optical integrated device 10 when viewed from a direction perpendicular to the main surface of the stem 1. In other words, the sides of the temperature control module 5 are inclined with respect to the Y-axis. The temperature control module 5 faces, for example, in the same direction as the optical element 13. This allows the temperature control module 5 to be placed directly below the semiconductor optical integrated device 10. This makes it possible to ensure a wide heat radiation area and reduce the power consumption of the temperature control module 5.

[0044] Embodiment 3 FIG. 7 is a perspective view of an optical module 300 according to the third embodiment. By mounting the temperature control module 5 obliquely relative to the semiconductor optical integrated device 10 as in the second embodiment, the distance between the corners of the temperature control module 5 and the cap 16 is increased. Therefore, the temperature control module 5 can be made larger than that in the first embodiment. This allows all of the capacitors 20, 21, and 22 to be disposed on the upper substrate 5a of the temperature control module 5. In this embodiment, the capacitors 20, 21, and 22 are mounted side by side on the opposite side of the main surface of the stem 1 of the temperature control module 5. According to such an aligned arrangement of the capacitors 20, 21, and 22, the capacitors 20, 21, and 22 can be transported together and mounted in one process. Therefore, the tact time can be reduced. In addition, when the capacitors are mounted individually, the solder pools after mounting affect the mounting of the next capacitor, deteriorating the bonding properties. In this embodiment, by transporting the capacitors 20, 21, and 22 together, the component inclination and the like are eliminated, improving the bonding properties.

[0045] If possible, the capacitors 20, 21, and 22 may be arranged side by side on the temperature control module 5 even in the arrangement of the temperature control module 5 and the semiconductor optical integrated device 10 as in the first embodiment.

[0046] Embodiment 4 FIG. 8 is a cross-sectional view of a semiconductor optical integrated device 410 according to the fourth embodiment. In general, a semiconductor laser device has an active layer formed parallel to a substrate, and emits light parallel to the substrate. In contrast, in the semiconductor optical integrated device 410 of this embodiment, the front end face of the waveguide 40 is formed at an angle of 45 degrees with respect to the substrate 41. A mirror 42 that totally reflects light is formed on the front end face. This allows laser light to be emitted in a direction perpendicular to the substrate 41. That is, the mirror 42 reflects the laser light of the semiconductor optical integrated device 410 in a direction perpendicular to the main surface of the stem 1. This makes the optical element 13 unnecessary, and reduces the material cost. The configuration in which the waveguide 40 is formed parallel to the upper surface of the substrate 41 is the same in the first to third embodiments.

[0047] 9 is a perspective view of an optical module 400 according to the fourth embodiment. According to this embodiment, the light emitting point of the semiconductor optical integrated device 410 can be moved toward the center of the stem 1. This increases the bonding area between the temperature control module 5 and the dielectric substrate 6, thereby reducing the thermal resistance. This allows the power consumption of the temperature control module 5 to be reduced.

[0048] 8, a light receiving section 43 for monitoring the intensity of the laser light reflected by a mirror 42 may be provided immediately above the front end face of the semiconductor optical integrated device 410. In this case, it is not necessary to mount the support block 14 and the light receiving device 15. This makes it possible to reduce material costs and facilitate the manufacture of the optical module 400.

[0049] Also, the reflectance of the mirror 42 may be set to about 99%, so that a part of the light intensity is transmitted and the laser light is emitted parallel to the substrate 41. In this case, as shown in Fig. 9, the light receiving element 15 may be disposed in front of the semiconductor optical integrated element 410, and the intensity of the transmitted laser light may be monitored by the light receiving element 15. In this case, it is not necessary to mount the light receiving section 43 on the semiconductor optical integrated element 410, and the semiconductor optical integrated element 410 can be easily manufactured.

[0050] Embodiment 5. 10 is a diagram illustrating the optical element 13 according to the first embodiment. In the first to third embodiments, the optical element 13 is mounted on the upper substrate 5a of the temperature control module 5. This increases the distance between the light emitting point of the semiconductor optical integrated device 10 and the optical element 13, and increases the optical path to the lens 17. This causes the beam 18, which has spread widely, to not fit within the effective diameter of the lens 17, resulting in vignetting, which may reduce the optical coupling efficiency in the optical fiber (not shown).

[0051] 11 is a diagram for explaining an optical element 513 according to the fifth embodiment. In this embodiment, the optical element 513 is mounted on the capacitor or thermistor 12. The capacitor is, for example, any one of the capacitors 20, 21, and 22. In this case, for example, by making the dielectric substrate 6 have a thickness equivalent to that of the capacitor or thermistor 12, the optical element 513 can be brought closer to the semiconductor optical integrated element 10. In addition, if an area for bonding the conductive wire 32 to the upper electrode of the capacitor or thermistor 12 is secured, it becomes possible to directly supply power to the capacitor or thermistor 12 from the DC power supply lead pin 2 via the conductive wire 32.

[0052] This reduces the distance between the light emitting point and optical element 13 compared to the first to third embodiments, and shortens the optical path to lens 17. This makes it possible to suppress vignetting at lens 17 due to beam divergence. Furthermore, by making optical element 13 smaller, it is possible to reduce material costs. Also, since it is no longer necessary to install optical element 13 on upper substrate 5a, it is possible to improve the degree of freedom in mounting.

[0053] Furthermore, for example, in a structure in which a mirror is mounted on a submount substrate, it is necessary to enlarge the submount substrate to secure mounting space. This increases the material cost of the submount substrate. In contrast, in this embodiment, there is no need to enlarge the dielectric substrate 6, making it possible to reduce the size of the dielectric substrate 6 and the material cost of the dielectric substrate 6.

[0054] Embodiment 6 12 is a diagram illustrating a light receiving element 15 according to the sixth embodiment. The light receiving element 15 is mounted on a lead pin 2 for DC power supply. Specifically, a support block 14 on which the light receiving element 15 is mounted is mounted on the lead pin 2 for DC power supply. This eliminates the need for space on the main surface of the stem 1 for mounting the light receiving element 15. This makes it possible to increase the clearance on the main surface of the stem 1.

[0055] An electrode pattern 14a is formed on the support block 14. A conductive thermosetting resin, solder, or other material is preferably used as a bonding material between the support block 14 and the electrode pattern 14a and the DC power supply lead pin 2. A conductive wire 33 is used to connect the electrode pattern 14a to the light receiving element 15 and to connect the electrode pattern 14a to the stem 1.

[0056] Embodiment 7 FIG. 13 is a cross-sectional view showing a state in which optical module 100 and receptacle 102 according to the seventh embodiment are connected. FIG. 14 is a perspective view of optical transceiver 1000 according to the seventh embodiment. Optical transceiver 1000 of this embodiment may include any of the optical modules according to the first to sixth embodiments. Optical transceiver 1000 may include a fixing block 101 that is attached to a side surface of stem 1 and covers optical module 100. A receptacle 102 for fixing an optical fiber is attached to fixing block 101. Fixing block 101 is joined to a side surface of stem 1.

[0057] A substrate 903 carrying integrated circuits for driving the optical module 100 and the optical receiving module 106 is connected to the optical module 100 and the optical receiving module 106 via a flexible printed circuit board 105. In the optical transceiver 1000, the optical module 100, the optical receiving module 106, the flexible printed circuit board 105, the receptacle 102, and the substrate 903 are housed in a case 900 composed of a lower housing 901 and an upper housing 902.

[0058] In order to increase the amount of heat transfer between fixed block 101 and lower housing 901, it is advisable to attach lower heat dissipation block 103 to fixed block 101, and then attach lower heat dissipation block 103 to lower housing 901. For bonding between fixed block 101 and lower heat dissipation block 103, and between lower heat dissipation block 103 and lower housing 901, a sheet-like insulator having high thermal conductivity or the like is used.

[0059] It is desirable for the lower heat dissipation block 103 to have a semicircular structure that allows the fixing block 101 to be fixed over the entire length of its side surface. This ensures a large bonding area between the fixing block 101 and the lower heat dissipation block 103. This improves the ability to radiate heat generated by the optical module 100 to the outside of the optical transceiver 1000, thereby reducing power consumption.

[0060] Furthermore, an upper heat dissipation block 104 may be attached to the fixed block 101. The upper heat dissipation block 104, like the lower heat dissipation block 103, has a semicircular structure that allows the fixed block 101 to be fixed over the entire length of its side. Furthermore, the upper heat dissipation block 104 has a fin-like surface on the side opposite the fixed block 101. By combining the lower heat dissipation block 103 and the upper heat dissipation block 104, heat can be efficiently dissipated from the entire circumference of the fixed block 101. This makes it possible to further reduce power consumption.

[0061] The technical features described in each embodiment may be used in appropriate combination. [Explanation of symbols]

[0062] 1 stem, 2 DC power supply lead pin, 3 RF power supply lead pin, 4 raised portion, 5 temperature control module, 5a upper substrate, 5b lower substrate, 6 dielectric substrate, 6a high frequency transmission line, 6b GND electrode pattern, 6c GND electrode pattern, 7 semiconductor laser, 8 optical modulator, 9 optical amplifier, 10 semiconductor optical integrated element, 11 matching resistor, 12 thermistor, 13 optical element, 14 support block, 14a electrode pattern, 15 light receiving element, 16 cap, 17 lens, 18 beam, 19 protective resistor, 20 capacitor, 21 capacitor, 22 capacitor, 30 conductive wire, 31 conductive wire, 32 conductive wire, 33 conductive wire, 40 waveguide, 41 substrate, 42 mirror, 43 light receiving portion, 100 optical module, 101 fixing block, 102 Receptacle, 103 lower heat dissipation block, 104 upper heat dissipation block, 105 flexible printed circuit board, 106 light receiving module, 200 optical module, 300 optical module, 400 optical module, 410 semiconductor optical integrated element, 513 optical element, 900 case, 901 lower housing, 902 upper housing, 903 board, 1000 optical transceiver

Claims

1. a stem having a main surface and a surface opposite to the main surface; a lead pin that penetrates the stem from the main surface to a surface opposite to the main surface; a temperature control module mounted on the main surface of the stem; a dielectric substrate mounted on the temperature control module on a side opposite to the main surface of the stem; a semiconductor optical integrated device mounted on the dielectric substrate on the side opposite to the temperature control module, the semiconductor integrated device having a semiconductor laser and an optical amplifier; An optical module comprising:

2. 2. The optical module according to claim 1, further comprising a first capacitor connecting the semiconductor laser to GND.

3. 3. The optical module according to claim 1, further comprising a second capacitor connecting the optical amplifier to GND.

4. 3. The optical module according to claim 1, wherein the semiconductor optical integrated device includes an optical modulator.

5. 5. The optical module according to claim 4, further comprising a third capacitor connected in parallel with the optical modulator.

6. a matching resistor connected in series with the third capacitor; 6. The optical module according to claim 5, wherein a series circuit formed by the third capacitor and the matching resistor is connected in parallel with the optical modulator.

7. a protective resistor connected in parallel with the optical modulator; 7. The optical module according to claim 6, wherein the protection resistor has a resistance value greater than that of the matching resistor.

8. A protrusion is formed on the main surface of the stem, 3. The optical module according to claim 1, further comprising an RF power supply lead pin provided on the raised portion.

9. the semiconductor optical integrated device has an optical modulator, a metallization for RF power supply is formed on the dielectric substrate; 9. The optical module of claim 8, wherein one end of the RF power supply metallization is connected to the optical modulator by a wire, and the other end of the RF power supply metallization is connected to the RF power supply lead pin by a wire, solder, or conductive adhesive.

10. GND metallization is formed on the side surface of the dielectric substrate, 9. The optical module according to claim 8, wherein the GND metallization is connected to the protrusion through a wire.

11. the semiconductor optical integrated device emits laser light parallel to the main surface of the stem, 3. The optical module according to claim 1, further comprising an optical element that reflects the laser light perpendicularly to the main surface of the stem.

12. the laser light is emitted obliquely with respect to a main axis of the semiconductor optical integrated device, 12. The optical module according to claim 11, wherein the optical element is oriented obliquely with respect to the main axis of the semiconductor optical integrated device.

13. 12. The optical module according to claim 11, wherein the optical element is mounted on a capacitor or a thermistor.

14. 12. The optical module according to claim 11, further comprising a light receiving element for receiving the laser light, disposed on the opposite side of the optical element from the semiconductor optical integrated element.

15. 15. The optical module according to claim 14, wherein the light receiving element is mounted on the lead pin.

16. 3. The optical module according to claim 1, wherein the temperature control module is inclined with respect to a major axis of the semiconductor optical integrated device when viewed from a direction perpendicular to the major surface of the stem.

17. the semiconductor optical integrated device has an optical modulator, a first capacitor connecting the semiconductor laser to GND; a second capacitor connecting the optical amplifier to GND; a third capacitor connected in parallel with the optical modulator; Equipped with 2. The optical module according to claim 1, wherein the first capacitor, the second capacitor, and the third capacitor are mounted side by side on a side of the temperature control module opposite to the main surface of the stem.

18. a mirror is formed on the front end face of the semiconductor optical integrated device; 3. The optical module according to claim 1, wherein the mirror reflects the laser light from the semiconductor optical integrated device in a direction perpendicular to the main surface of the stem.

19. 3. An optical transceiver comprising the optical module according to claim 1.

20. a fixing block attached to a side surface of the stem and covering the optical module; a receptacle attached to the fixing block for fixing an optical fiber; 20. The optical transceiver of claim 19, comprising:

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