Plating apparatus and plating method

Abstract

This corrects irregularities in plating thickness at the peripheral edge of the substrate and improves uniformity of the plating thickness over the entire surface to be plated. The plating module 400 includes a plating tank 410 configured to contain a plating solution, an anode 430 disposed in the plating tank 410, a substrate holder 440 configured to hold a substrate Wf with its plating surface Wf-a facing downward, a lifting mechanism 443 configured to raise and lower the substrate holder 440, a rotation mechanism 447 configured to rotate the substrate holder 440, a shielding member 481 capable of shielding an electric field formed between the anode 430 and the substrate Wf, and a shielding mechanism 485 configured to switch and position the shielding member 481 between a reference position between the anode 430 and the substrate Wf, a shielding position in which the electric field shielding area is larger than the reference position, and a retracted position retracted from between the anode 430 and the substrate Wf.

Description

[Technical field]

[0001] The present application relates to a plating apparatus and a plating method. [Background technology]

[0002] A cup-type electrolytic plating apparatus is known as an example of a plating apparatus. In the cup-type electrolytic plating apparatus, a substrate (e.g., a semiconductor wafer) held by a substrate holder is immersed in a plating solution with the surface to be plated facing downward, and a voltage is applied between the substrate and an anode to deposit a conductive film on the surface of the substrate.

[0003] It is known that in a cup-type electrolytic plating apparatus, a shielding member is used to shield the electric field formed between the anode and the substrate. For example, Patent Document 1 discloses an electrolytic plating apparatus that shields a specific portion of the substrate only at a desired timing by moving a shielding member between the specific portion of the substrate and the anode when the specific portion of the substrate rotates within a range of a predetermined rotation angle. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent No. 6901646 Summary of the Invention [Problem to be solved by the invention]

[0005] However, the electrolytic plating apparatus of the prior art has room for improvement in terms of correcting the irregularities in the plating thickness around the periphery of the substrate and improving the uniformity of the plating thickness over the entire surface to be plated.

[0006] That is, the plating thickness of the peripheral portion of the plated surface of the substrate may be locally disturbed due to various influences such as uneven power supply of the contacts provided on the substrate holder, uneven seed thickness, pattern shape, etc. For example, the peripheral portion of the substrate may have a mixture of standard plating thicknesses, thicker plating thicknesses than the standard portions, and thinner plating thicknesses than the standard portions. Also, the overall plating thickness of the peripheral portion of the substrate may be thicker or thinner than the standard substrate.

[0007] Therefore, one object of the present application is to improve the uniformity of the plating thickness over the entire surface to be plated by correcting the irregularities in the plating thickness at the peripheral edge of the substrate. [Means for solving the problem]

[0008] According to one embodiment, a plating apparatus is disclosed that includes a plating tank configured to contain a plating solution, an anode disposed in the plating tank, a substrate holder configured to hold a substrate with its surface to be plated facing downward, a lifting mechanism configured to raise and lower the substrate holder, a rotation mechanism configured to rotate the substrate holder, a shielding member capable of shielding an electric field formed between the anode and the substrate, and a shielding mechanism configured to switch and position the shielding member between a reference position between the anode and the substrate, a shielding position in which the electric field shielding area is larger than that of the reference position, and a retracted position in which the shielding member is retracted from between the anode and the substrate. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a perspective view showing the overall configuration of the plating apparatus of the present embodiment. [Diagram 2] FIG. 2 is a plan view showing the overall configuration of the plating apparatus of the present embodiment. [Diagram 3] FIG. 3 is a vertical cross-sectional view showing a schematic configuration of a plating module according to one embodiment, in which the shielding member has been moved to a reference position. [Figure 4]FIG. 4 is a vertical cross-sectional view showing a schematic configuration of a plating module according to one embodiment, in which the shielding member is moved to the shielding position. [Diagram 5] FIG. 5 is a vertical cross-sectional view showing a schematic configuration of a plating module according to one embodiment, illustrating a state in which the shielding member has been moved to a retracted position. [Figure 6] FIG. 6 is a plan view showing a schematic state in which the shielding member is placed at the retracted position, the reference position, and the shielding position. [Figure 7] FIG. 7 is a plan view that illustrates an example in which the arrangement position of the shielding member is changed in accordance with the distribution of the plating thickness on the peripheral edge portion of the substrate. [Figure 8] FIG. 8 is a flowchart of a plating method using the plating module of one embodiment. [Figure 9] FIG. 9 is a plan view showing a schematic example of switching the arrangement position of the shielding member depending on the type of the substrate. [Figure 10] FIG. 10 is a flowchart of a plating method using the plating module of one embodiment. [Figure 11] FIG. 11 is a plan view showing a plurality of regions included in a resistor element according to an embodiment. [Figure 12] FIG. 12 is a diagram showing a schematic example of a plating thickness when the position of the shielding member is adjusted in accordance with the distribution of the plating thickness at the peripheral portion of the substrate. [Figure 13] FIG. 13 is a plan view showing a plurality of regions included in a resistor element according to an embodiment. [Figure 14] FIG. 14 is a plan view that illustrates an example in which the arrangement position of the shielding member is changed in accordance with the distribution of the plating thickness on the peripheral edge portion of the substrate. [Figure 15] FIG. 15 is a diagram showing the relationship between the timing at which the first portion Wf-e of the substrate is shielded and the rotation speed of the substrate holder. [Figure 16] FIG. 16 is a plan view that illustrates an example in which the arrangement position of the shielding member is changed in accordance with the distribution of the plating thickness on the peripheral edge portion of the substrate. [Figure 17]FIG. 17 is a plan view that illustrates an example in which the arrangement position of the shielding member is changed in accordance with the distribution of the plating thickness on the peripheral edge portion of the substrate. [Figure 18] FIG. 18 is a plan view that illustrates an example in which the arrangement position of the shielding member is changed in accordance with the distribution of the plating thickness on the peripheral edge portion of the substrate. [Figure 19] FIG. 19 is a plan view that illustrates an example in which the arrangement position of the shielding member is changed in accordance with the distribution of the plating thickness on the peripheral edge portion of the substrate. [Figure 20] FIG. 20 is a plan view that illustrates an example in which the arrangement position of the shielding member is changed in accordance with the distribution of the plating thickness on the peripheral edge portion of the substrate. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings described below, the same or corresponding components are designated by the same reference numerals and redundant description will be omitted.

[0011] <Overall configuration of plating equipment> Fig. 1 is a perspective view showing the overall configuration of the plating apparatus of this embodiment. Fig. 2 is a plan view showing the overall configuration of the plating apparatus of this embodiment. As shown in Figs. 1 and 2, the plating apparatus 1000 includes a load port 100, a transfer robot 110, an aligner 120, a pre-wet module 200, a pre-soak module 300, a plating module 400, a cleaning module 500, a spin rinse dryer 600, a transfer device 700, and a control module 800.

[0012] The load port 100 is a module for loading a substrate stored in a cassette such as a FOUP (not shown) into the plating apparatus 1000 and unloading a substrate from the plating apparatus 1000 to the cassette. In this embodiment, four load ports 100 are arranged in a horizontal line, but the number and arrangement of the load ports 100 are arbitrary. The transfer robot 110 is a robot for transferring a substrate, and is configured to transfer a substrate between the load port 100, the aligner 120, the pre-wet module 200, and the spin rinse dryer 600. When transferring a substrate between the transfer robot 110 and the transfer apparatus 700, the transfer robot 110 and the transfer apparatus 700 can transfer the substrate via a temporary placement table (not shown).

[0013] The aligner 120 is a module for aligning the position of an orientation flat, a notch, etc. of a substrate to a predetermined direction. In this embodiment, two aligners 120 are arranged side by side in the horizontal direction, but the number and arrangement of the aligners 120 are arbitrary. The pre-wet module 200 wets the surface to be plated of the substrate before plating with a treatment liquid such as pure water or degassed water, thereby replacing air inside a pattern formed on the substrate surface with the treatment liquid. The pre-wet module 200 is configured to perform a pre-wet process that makes it easier to supply plating liquid to the inside of the pattern by replacing the treatment liquid inside the pattern with a plating liquid during plating. In this embodiment, two pre-wet modules 200 are arranged side by side in the vertical direction, but the number and arrangement of the pre-wet modules 200 are arbitrary.

[0014] The presoak module 300 is configured to perform a presoak process in which an oxide film with high electrical resistance present on the surface of a seed layer formed on the plated surface of a substrate before plating is etched away with a treatment liquid such as sulfuric acid or hydrochloric acid to clean or activate the surface of the substrate to be plated. In this embodiment, two presoak modules 300 are arranged vertically, but the number and arrangement of the presoak modules 300 are arbitrary. The plating module 400 performs plating on the substrate. In this embodiment, there are two sets of 12 plating modules 400 arranged in a vertical arrangement of three modules and a horizontal arrangement of four modules, for a total of 24 plating modules 400, but the number and arrangement of the plating modules 400 are arbitrary.

[0015] The cleaning module 500 is configured to perform a cleaning process on the substrate to remove plating solution and the like remaining on the substrate after plating. In this embodiment, two cleaning modules 500 are arranged vertically, but the number and arrangement of the cleaning modules 500 are arbitrary. The spin rinse dryer 600 is a module for drying the substrate after cleaning by rotating it at high speed. In this embodiment, two spin rinse dryers are arranged vertically, but the number and arrangement of the spin rinse dryers are arbitrary. The transport device 700 is a device for transporting the substrate between multiple modules in the plating apparatus 1000. The control module 800 is configured to control multiple modules of the plating apparatus 1000, and can be configured from a general computer or a dedicated computer equipped with an input / output interface with an operator, for example.

[0016] An example of a series of plating processes performed by the plating apparatus 1000 will be described. First, a substrate stored in a cassette is carried into the load port 100. Next, the transfer robot 110 removes the substrate from the cassette of the load port 100 and transfers the substrate to the aligner 120. The aligner 120 aligns the positions of the orientation flat, notch, etc. of the substrate to a predetermined direction. The transfer robot 110 delivers the substrate, whose direction has been aligned by the aligner 120, to the pre-wet module 200.

[0017] The pre-wet module 200 performs a pre-wet process on the substrate. The transport device 700 transports the substrate that has been subjected to the pre-wet process to the pre-soak module 300. The pre-soak module 300 performs a pre-soak process on the substrate. The transport device 700 transports the substrate that has been subjected to the pre-soak process to the plating module 400. The plating module 400 performs a plating process on the substrate.

[0018] The transfer device 700 transfers the plated substrate to the cleaning module 500. The cleaning module 500 performs a cleaning process on the substrate. The transfer device 700 transfers the cleaned substrate to the spin rinse dryer 600. The spin rinse dryer 600 dries the substrate. The transfer robot 110 receives the substrate from the spin rinse dryer 600 and transfers the dried substrate to a cassette on the load port 100. Finally, the cassette containing the substrate is removed from the load port 100.

[0019] <Plating module configuration> Next, the configuration of the plating module 400 will be described. Since the 24 plating modules 400 in this embodiment have the same configuration, only one plating module 400 will be described. FIG. 3 is a vertical cross-sectional view that shows a schematic configuration of a plating module in one embodiment, showing a state in which the shielding member has moved to a reference position. FIG. 4 is a vertical cross-sectional view that shows a schematic configuration of a plating module in one embodiment, showing a state in which the shielding member has moved to a shielding position. FIG. 5 is a vertical cross-sectional view that shows a schematic configuration of a plating module in one embodiment, showing a state in which the shielding member has moved to a retracted position.

[0020] 3 to 5, the plating module 400 includes a plating tank 410 for containing a plating solution. The plating module 400 includes a membrane 420 that vertically divides the interior of the plating tank 410. The interior of the plating tank 410 is divided into a cathode region 422 and an anode region 424 by the membrane 420.

[0021] The cathode region 422 and the anode region 424 are filled with plating solution. The plating module 400 includes a nozzle 426 that opens toward the cathode region 422, and a supply source 428 for supplying plating solution to the cathode region 422 through the nozzle 426. The plating module 400 also includes a mechanism for supplying plating solution to the anode region 424, but this mechanism is not shown. An anode 430 is provided on the bottom surface of the plating tank 410 in the anode region 424. A resistor 450 is disposed in the cathode region 422 facing the membrane 420, and the resistor 450 is directly or indirectly attached to the plating tank 410. The resistor 450 is a member for achieving uniform plating on the plating surface Wf-a of the substrate Wf, and is made of a plate-shaped member having a large number of holes formed therein.

[0022] The plating module 400 also includes a substrate holder 440 for holding the substrate Wf with the surface Wf-a to be plated facing downward. The substrate holder 440 includes a power supply contact for supplying power to the substrate Wf from a power source (not shown). The substrate holder 440 includes a seal ring holder 442 for supporting the outer edge of the surface Wf-a to be plated of the substrate Wf, and a frame 446 for holding the seal ring holder 442 on a substrate holder main body (not shown). The substrate holder 440 also includes a back plate 444 for pressing the back surface of the surface Wf-a to be plated of the substrate Wf, and a shaft 448 attached to the back surface of the substrate pressing surface of the back plate 444.

[0023] The plating module 400 includes a lifting mechanism 443 for lifting and lowering the substrate holder 440, and a rotation mechanism 447 for rotating the substrate holder 440 so that the substrate Wf rotates around a virtual axis of a shaft 448 (a virtual rotation axis extending vertically through the center of the surface Wf-a to be plated). The lifting mechanism 443 and the rotation mechanism 447 can be realized by a known mechanism such as a motor. The plating module 400 is configured to perform plating on the surface Wf-a to be plated of the substrate Wf by immersing the substrate Wf in the plating solution in the cathode region 422 using the lifting mechanism 443 and applying a voltage between the anode 430 and the substrate Wf.

[0024] The plating module 400 includes a film thickness sensor 490 configured to measure the plating film thickness at the peripheral portion of the substrate Wf. In this embodiment, the film thickness sensor 490 is attached to the resistor 450 so as to face the peripheral portion of the substrate Wf. The film thickness sensor 490 is configured to measure the plating film thickness at the peripheral portion of the opposing substrate Wf during plating processing using any method such as optics, electric field, magnetic field, or electric potential. Since the substrate rotates during plating processing, the film thickness sensor 490 can measure the plating film thickness distribution along the circumferential direction of the peripheral portion of the substrate.

[0025] The plating module 400 includes a shielding member 481 for shielding an electric field formed between the anode 430 and the substrate Wf when the plating module 400 is disposed between the anode 430 and the substrate Wf. The shielding member 481 may be, for example, a shielding plate formed in a plate shape. The plating module 400 also includes a shielding mechanism 485 for moving the shielding member 481. The shielding mechanism 485 is configured so that the position of the shielding member 481 can be switched and positioned. A specific example of the shielding mechanism 485 will be described below.

[0026] Fig. 6 is a plan view showing a state where the shielding member is arranged at the retracted position, the reference position, and the shielding position. Fig. 6(A) shows a state where the shielding member 481 is arranged at the reference position, Fig. 6(B) shows a state where the shielding member 481 is arranged at the shielding position, and Fig. 6(C) shows a state where the shielding member 481 is arranged at the retracted position.

[0027] 3 to 5 and 6, the shielding mechanism 485 is configured to switch and position the shielding member 481 between a reference position between the anode 430 and the substrate Wf, a shielding position where the electric field shielding area is larger than that of the reference position, and a retreated position retreated from between the anode 430 and the substrate Wf. As shown in Figs. 6(A) to 6(C), the reference position is a position where the shielding member 481 and the substrate Wf overlap in a plan view, the shielding position is a position where the shielding member 481 and the substrate Wf overlap in a plan view to a greater extent than that of the reference position, and the retreated position is a position where the shielding member 481 and the substrate Wf do not overlap in a plan view. In this way, by switching the shielding member 481 between the three positions of the reference position, the shielding position, and the retreated position, the electric field shielding area is changed, and the plating film thickness at the peripheral portion of the substrate Wf is changed.

[0028] For example, the shielding mechanism 485 may be configured to switch the shielding member 481 between a reference position, a shielding position, and a retracted position according to the distribution of the plating film thickness at the peripheral portion of the substrate Wf measured by the film thickness sensor 490. Note that, in the present embodiment, an example is shown in which the shielding mechanism 485 switches the shielding member 481 between three positions, but the present embodiment is not limited to this, and the shielding mechanism 485 can also switch the shielding member 481 between four or more positions. In addition, in this specification, when the shielding mechanism 485 switches the shielding member 481 to a predetermined position, it does not simply mean that the shielding member 481 passes through a predetermined position during the process of moving the shielding member 481, but means that the shielding member 481 stops at a predetermined position.

[0029] FIG. 7 is a plan view showing an example of switching the position of the shielding member according to the distribution of the plating film thickness at the peripheral portion of the substrate. FIG. 7(A) to FIG. 7(D) show a state in which the position of the shielding member is switched with the rotation of the substrate Wf. As shown in FIG. 7(A) to FIG. 7(D), when the substrate Wf rotates, the peripheral portion of the substrate Wf sequentially approaches the shielding member 481. In the example of FIG. 7, a first plating film thickness (reference film thickness), a second plating film thickness thicker than the first plating film thickness, and a third plating film thickness thinner than the first plating film thickness are formed at the peripheral portion of the substrate Wf, and the plating film thickness is irregular at the peripheral portion of the substrate Wf. The plating film thickness irregularity can be caused by various factors such as uneven power supply of the contacts provided on the substrate holder 440, uneven seed thickness on the plated surface of the substrate Wf, and the pattern shape on the plated surface of the substrate Wf.

[0030] As shown in Fig. 7(A), the shielding mechanism 485 is configured to place the shielding member 481 at a reference position relative to a first peripheral portion Wf-b of the substrate Wf on which a first plating film thickness is formed. Specifically, when the first peripheral portion Wf-b of the substrate Wf approaches the shielding member 481, the shielding mechanism 485 places the shielding member 481 at the reference position. Also, as shown in Fig. 7(B), the shielding mechanism 485 is configured to place the shielding member 481 at a shielding position relative to a second peripheral portion Wf-c of the substrate Wf on which a second plating film thickness is formed. Specifically, when the substrate Wf rotates and the second peripheral portion Wf-c of the substrate Wf approaches the shielding member 481, the shielding mechanism 485 places the shielding member 481 at the shielding position. 7(C), when the substrate Wf further rotates and the first peripheral portion Wf-b approaches the shielding member 481 again, the shielding mechanism 485 places the shielding member 481 in the reference position. Also, as shown in FIG. 7(D), the shielding mechanism 485 is configured to place the shielding member 481 in a retracted position with respect to the third peripheral portion Wf-d of the substrate Wf on which the third plating film thickness is formed. Specifically, when the substrate Wf further rotates and the third peripheral portion Wf-d of the substrate Wf approaches the shielding member 481, the shielding mechanism 485 places the shielding member 481 in the retracted position. Note that, in FIGS. 7(A) and (C), an example is shown in which the substrate Wf held by the substrate holder 440 is rotated in one direction at a constant speed, and in FIGS. 7(B) and (D), an example is shown in which the substrate Wf held by the substrate holder 440 is rotated in one direction at a constant speed, but the present invention is not limited thereto.

[0031] According to this embodiment, by disposing the shielding member 481 in a shielding position with respect to the second peripheral portion Wf-c, the formation of a plating thickness on the second peripheral portion Wf-c can be suppressed, and the plating thickness on the second peripheral portion Wf-c can be brought closer to the reference thickness. On the other hand, by disposing the shielding member 481 in a retracted position with respect to the third peripheral portion Wf-d, the formation of a plating thickness on the third peripheral portion Wf-d can be promoted, and the plating thickness on the third peripheral portion Wf-d can be brought closer to the reference thickness. As a result, according to this embodiment, the irregularity in the plating thickness on the peripheral portion of the substrate can be corrected, and the uniformity of the plating thickness on the entire surface to be plated can be improved.

[0032] In the present embodiment, an example has been shown in which the position of the shielding member 481 is determined according to the distribution of the plating film thickness at the peripheral portion of the substrate Wf measured by the film thickness sensor 490, but the present invention is not limited to this. That is, the plating module 400 may not include the film thickness sensor 490. In this case, the shielding mechanism 485 can predict that a similar plating film thickness distribution will be formed on the same type of substrate Wf based on the distribution of the plating film thickness of the substrate Wf obtained in advance by an experiment or the like. Therefore, the shielding mechanism 485 may be configured to switch and position the shielding member 481 among the reference position, the shielding position, and the retreated position according to the distribution of the plating film thickness formed on the peripheral portion of the substrate Wf.

[0033] Next, a plating method using the plating module 400 of this embodiment will be described. Fig. 8 is a flowchart of the plating method using the plating module of one embodiment.

[0034] In the plating method, the substrate Wf is placed on the substrate holder 440 (step 102). Step 102 can be performed, for example, by placing the substrate Wf with the plating surface Wf-a facing downward on the seal ring holder 442 by a robot hand (not shown) or the like, and pressing the back surface of the substrate Wf with the back plate 444.

[0035] Next, in the plating method, the substrate holder 440 is lowered into the plating tank 410 by the lifting mechanism 443 (lowering step 104). Next, in the plating method, the substrate holder 440 is rotated by the rotating mechanism 447 (rotating step 106).

[0036] Next, in the plating method, a voltage is applied between the anode 430 disposed in the plating tank 410 and the substrate Wf held by the substrate holder 440 to perform plating on the surface Wf-a to be plated (plating step 108). Note that steps 106 and 108 may be performed in reverse order or simultaneously.

[0037] Next, the plating method measures the plating thickness at the peripheral portion of the substrate Wf using the film thickness sensor 490 (measurement step 110). Next, the plating method switches and positions the shielding member 481 among a reference position, a shielding position, and a retracted position according to the distribution of the plating thickness at the peripheral portion of the substrate Wf measured in the measurement step 110 (shielding step 112).

[0038] Specifically, the shielding step 112 includes a step 112-a of determining the type of the peripheral portion of the substrate Wf adjacent to the shielding member 481. The shielding step 112 includes a first arrangement step 112-b of arranging the shielding member 481 at a reference position with respect to the first peripheral portion Wf-b when it is determined that the first peripheral portion Wf-b of the substrate Wf is adjacent to the shielding member 481. The shielding step 112 includes a second arrangement step 112-c of arranging the shielding member 481 at a shielding position with respect to the second peripheral portion Wf-c when it is determined that the second peripheral portion Wf-c of the substrate Wf is adjacent to the shielding member 481. The shielding step 112 includes a third arrangement step 112-d of arranging the shielding member 481 in a retracted position relative to the third peripheral portion Wf-d when it is determined that the third peripheral portion Wf-d of the substrate Wf is close to the shielding member 481. This makes it possible to correct irregularities in the plating thickness at the peripheral portion of the substrate and improve the uniformity of the plating thickness over the entire surface to be plated.

[0039] Next, the plating method determines whether or not the plating process should be terminated (step 114). If the plating method determines that the plating process should not be terminated because, for example, a predetermined time has not elapsed since the plating process started (step 114, No), the plating method returns to step 110 and continues the process.

[0040] On the other hand, when it is determined that the plating process should be ended because, for example, a predetermined time has elapsed since the plating process started (Yes in step 114), the plating process is stopped by stopping the application of voltage between the anode 430 and the substrate Wf (step 116). Next, the plating method stops the rotation of the substrate holder 440 by the rotation mechanism 447 (step 118). Next, the plating method raises the substrate holder 440 by the lifting mechanism 443 (step 120). This ends a series of plating processes.

[0041] Next, a plating module 400 according to another embodiment will be described. In the above embodiment, the shielding mechanism 485 is configured to switch the shielding member 481 between the reference position, the shielding position, and the retracted position according to the distribution of the plating film thickness at the peripheral portion of the substrate Wf, but is not limited to this. The shielding mechanism 485 may be configured to switch the shielding member 481 between the reference position, the shielding position, and the retracted position according to the type of substrate Wf held by the substrate holder 440. This point will be described below.

[0042] Fig. 9 is a plan view showing a schematic example of switching the position of the shielding member depending on the type of substrate. Fig. 9(A) shows the plating film thickness distribution when plating is performed on three different types of substrates with shielding member 481 placed at the reference position. Fig. 9(B) shows the state in which shielding member 481 is placed at the reference position, shielding position, and retracted position for three types of substrates. Fig. 9(C) shows the plating film thickness distribution formed on the substrate as a result of placing shielding member 481 as in Fig. 9(B).

[0043] As shown in Fig. 9(A), various factors such as uneven seed thickness on the plated surface of the substrate Wf and the pattern shape on the plated surface of the substrate Wf may cause irregularities in the plated film thickness at the periphery of the substrate. For example, as shown in the upper part of Fig. 9(A), assume that a uniform distribution of plated film thickness is obtained over the entire substrate as a result of plating processing with the shielding member 481 placed at the reference position. In this case, the shielding mechanism 485 places the shielding member 481 at the reference position for substrates of the same type, as shown in the upper part of Fig. 9(B). As a result, a uniform plated film thickness is obtained over the entire plated surface, as shown in the upper part of Fig. 9(C).

[0044] On the other hand, for example, as shown in the middle of Fig. 9(A), assume that as a result of plating processing with the shielding member 481 placed at the reference position, the plating thickness at the peripheral portion of the substrate becomes thicker than that at the center portion. In this case, the shielding mechanism 485 places the shielding member 481 at the shielding position for the same type of substrate, as shown in the middle of Fig. 9(B). As a result, it is possible to suppress the formation of a plating thickness at the peripheral portion of the substrate Wf, and therefore it is possible to improve the uniformity of the plating thickness over the entire surface to be plated, as shown in the middle of Fig. 9(C).

[0045] Also, for example, as shown in the lower part of FIG. 9(A), suppose that as a result of plating processing with the shielding member 481 placed at the reference position, the plating thickness at the peripheral part of the substrate becomes thinner than that at the center part. In this case, the shielding mechanism 485 places the shielding member 481 at the retreated position for the same type of substrate, as shown in the lower part of FIG. 9(B). As a result, it is possible to promote the formation of a plating thickness at the peripheral part of the substrate Wf, and therefore, as shown in the lower part of FIG. 9(C), it is possible to improve the uniformity of the plating thickness over the entire surface to be plated. As described above, according to this embodiment, it is possible to improve the uniformity of the plating thickness over the entire surface to be plated by correcting the irregularity of the plating thickness at the peripheral part of the substrate.

[0046] Next, a plating method using the plating module 400 of this embodiment will be described. Fig. 10 is a flowchart of the plating method using the plating module of one embodiment.

[0047] The plating method determines the type of substrate held by the substrate holder 440 (determination step 201). The determination step 201 can determine the type of substrate based on, for example, a distribution of plating film thicknesses of substrates Wf of the same type previously obtained by an experiment or the like. Next, the plating method places the substrate Wf on the substrate holder 440 (step 202). Step 202 can be performed, for example, by placing the substrate Wf with the surface Wf-a to be plated facing downward on the seal ring holder 442 by a robot hand (not shown) or the like, and pressing the back surface of the substrate Wf with the back plate 444.

[0048] Next, in the plating method, the substrate holder 440 is lowered into the plating tank 410 by the lifting mechanism 443 (lowering step 204). Next, in the plating method, the substrate holder 440 is rotated by the rotating mechanism 447 (rotating step 206).

[0049] Next, in the plating method, a voltage is applied between the anode 430 disposed in the plating tank 410 and the substrate Wf held by the substrate holder 440, thereby performing plating on the surface to be plated Wf-a (plating step 208).

[0050] Next, in the plating method, the shielding member 481 is switched between the reference position, the shielding position, and the retreated position depending on the type of the substrate determined in the determination step 201 (shielding step 210). Specifically, as described with reference to Figs. 9(A) and 9(B), the shielding member 481 is switched between the reference position, the shielding position, and the retreated position depending on whether the plating thickness formed on the peripheral portion of the substrate is equal to, thicker than, or thinner than the central portion. This makes it possible to correct the irregularity in the plating thickness on the peripheral portion of the substrate and improve the uniformity of the plating thickness over the entire surface to be plated, as shown in Fig. 9(C). Note that steps 206, 208, and 210 may be performed in a reverse order or simultaneously.

[0051] Next, the plating method determines whether or not the plating process should be terminated (step 212). If the plating method determines that the plating process should not be terminated because, for example, a predetermined time has not elapsed since the plating process started (step 212, No), the plating method returns to step 212 and continues the process.

[0052] On the other hand, when it is determined that the plating process should be ended because, for example, a predetermined time has elapsed since the start of the plating process (Yes in step 212), the plating process is stopped by stopping the application of voltage between the anode 430 and the substrate Wf (step 214). Next, the plating method stops the rotation of the substrate holder 440 by the rotation mechanism 447 (step 216). Next, the plating method raises the substrate holder 440 by the lifting mechanism 443 (step 218). This ends a series of plating processes.

[0053] Next, another aspect of the plating apparatus 1000 of the present embodiment will be described. In the above embodiment, the resistor 450 included in the plating apparatus 1000 has a disk member with a large number of holes formed at equal intervals along the circumferential direction of the disk member, but is not limited to this. This aspect will be described below.

[0054] FIG. 11 is a plan view showing a plurality of regions included in a resistor of an embodiment. The resistor 450 is configured by forming a number of holes 452 in a disk member 451. Note that FIG. 11 illustrates only a portion of the number of holes 452 formed in the disk member 451, but in reality, the holes 452 are formed entirely within a broken line 455. The broken line 455 indicates the plated surface of the substrate, and the region through which the metal ions of the resistor pass (ion permeation region) is set to be approximately the same as or slightly smaller than the plated surface of the substrate, and the shielding region by the resistor refers to the region excluding an opening 454 (S5 region) described later. This setting allows the resistor 450 to function appropriately with respect to the plated surface of the substrate Wf, and enables fine adjustment of the flow of the plating solution and the plating distribution of the metal on the substrate. A number of holes 452 are formed in the disk member 451, but there are portions in which the holes 452 are formed non-uniformly along the circumferential direction of the disk member 451. More specifically, as shown in FIG. 11, the resistor 450 has a dynamic shielding area DA where the resistor 450 and the shielding member 481 overlap when the shielding member 481 is placed in the shielding position. The resistor 450 includes a first area S1 having a first shielding rate in the dynamic shielding area DA. The first shielding rate is the rate at which the resistor 450 shields the penetration of metal ions in the area S1, and is expressed as: first shielding rate=1-total area of ​​holes in the area S1 / area of ​​the area S1. The same applies to the shielding rates of other areas described later. Note that each total area is calculated with the hole of the adjacent other area as the boundary. The first area S1 has an area less than 0.35% of the total area of ​​the resistor 450 facing the substrate held by the substrate holder 440.

[0055] The resistor 450 also includes a second region S2 that is disposed inside the dynamic shielding region DA and spaced apart from the first region S1, and has a second shielding rate that is greater than the first shielding rate. The resistor 450 also includes a third region S3 that is disposed between the first region S1 and the second region S2 in the dynamic shielding region DA, and has a third shielding rate that is greater than the first shielding rate and less than the second shielding rate. The first region S1, the second region S2, and the third region S3 are disposed in the dynamic shielding region DA, so that the shielding rate changes dynamically in the dynamic shielding region DA. The third region S3 extends along the circumferential direction beyond the dynamic shielding region DA, and has a uniform third shielding rate in the extended region. In this embodiment, the third region S3 extends around the entire circumference at a predetermined radial position (43rd row) of the resistor 450, and has a uniform third shielding rate around the entire circumference. In addition, since the first region S1 is a region that has a local shielding rate with respect to the entire circumferential direction at the peripheral portion of the shielded region of the resistor 450, in this specification, the first region S1 is referred to as a "local shielded region."

[0056] The resistor 450 further includes a fourth region S4 that is disposed inside the second region S2 and in another portion of the second region S2 in the circumferential direction and has a fourth shielding ratio smaller than the second shielding ratio. The resistor 450 further includes a fifth region S5 that is disposed in another portion of the first region S1 in the circumferential direction (specifically, a portion shifted 90 degrees from the first region S1) and has an opening 454 larger than the hole 452. The shielding ratio of the fifth region S5 is 0, and the shielding region of the resistor refers to specific regions (first region, second region, third region, fourth region, sixth region), which are characterized by different shielding ratios when the substrate is in different azimuth positions. The resistor 450 further includes a sixth region S6 that is disposed in another portion of the first region S1 and the fifth region S5 in the circumferential direction and has a sixth shielding ratio larger than the first shielding ratio.

[0057] In one embodiment of the example shown in FIG. 11, the fourth region S4 is disposed from the center (row 0) of the disk member to the entire circumference of the 40th row and parts of the 41st and 42nd rows, and the fourth shielding rate is 72%. The second region S2 is disposed in parts of the 41st and 42nd rows, and the second shielding rate is 84%. The third region S3 is disposed in the 43rd row, and the third shielding rate is 66%. The first region S1 is disposed in parts of the 44th and 45th rows, and the first shielding rate is 48%. The sixth region S6 is disposed in part of the 44th row, and the sixth shielding rate is 86%.

[0058] In another embodiment of the example shown in FIG. 11, the fourth region S4 is disposed on the entire circumference from the center (row 0) of the disk member to the 40th row and on a part of the 41st row, and the fourth shielding rate is 72%. The second region S2 is disposed on a part of the 41st row, and the second shielding rate is 86%. The third region S3 is disposed on the 42nd and 43rd rows, and the third shielding rate is 72% for the 42nd row and 66% for the 43rd row. The first region S1 is disposed on the 44th and 45th rows, and the first shielding rate is 48%. The sixth region S6 is disposed on a part of the 44th row, and the sixth shielding rate is 86%.

[0059] Fig. 12 is a diagram showing an example of plating thickness when the position of the shielding member is adjusted according to the distribution of plating thickness on the peripheral portion of the substrate. As shown in the upper part of Fig. 12, the shielding mechanism 485 places the shielding member 481 at a shielding position for the portion of the peripheral portion of the substrate where the plating thickness is thick. This makes it possible to suppress the formation of plating thickness in that portion, so that the plating thickness in that portion can be made closer to the reference thickness (normal thickness).

[0060] 12, the shielding mechanism 485 places the shielding member 481 in a reference position for a portion of the peripheral portion of the substrate where the plating film thickness is normal. This makes it possible to maintain the plating film thickness in that portion at the normal thickness. Also, as shown in the lower portion of FIG. 12, the shielding mechanism 485 places the shielding member 481 in a retracted position for a portion of the peripheral portion of the substrate where the plating film thickness is thin. This makes it possible to promote the plating film thickness in that portion, so that the plating film thickness in that portion can be brought closer to the reference thickness (normal thickness).

[0061] According to this embodiment, the resistor 450 has a third region S3 extending in the circumferential direction beyond the dynamic shielding region DA, and the extending region has a uniform third shielding rate. Therefore, the resistor 450 of this embodiment has an advantage over the resistor of the prior art. That is, the shielding member 481 is disposed at a reference position such that the 42nd row of the resistor 450 is exposed in a portion where the plating thickness is normal, and plating is performed. In the resistor of the prior art, the shielding rate of the 41st row to the 43rd row is higher than the shielding rate in the other circumferential directions, so the plating thickness tends to be thin. On the other hand, the 43rd row (or the 42nd row and the 43rd row) of the resistor 450 of this embodiment has the same shielding rate as the other circumferential directions and the holes are uniformly arranged, so that the influence of the current density distribution of the 41st row and the 42nd row (or the 41st row) which have different shielding rates in the other circumferential directions is mitigated, and the thickness uniformity or coplanarity is less affected in the portion where the thickness is normal. As a result, according to this embodiment, when the shielding member 481 is placed at the reference position, the plating thickness on the peripheral edge of the substrate can be maintained at the normal thickness.

[0062] In one embodiment of the example shown in FIG. 11, the fourth region S4 is arranged from the center (row 0) of the disk member to the 42nd row, and the fourth shielding rate is 72%. The third region S3 is arranged in the 43rd row, and the third shielding rate is 66%. The fifth region S5 is arranged in the 44th row and a part of the 45th row. The fifth region S5 has an opening 454 larger than the hole, and therefore the shielding rate is 0%. The sixth region S6 is arranged in a part of the 44th row, and the sixth shielding rate is 86%.

[0063] In the above embodiment, the third region S3 extends around the entire circumference of the disk member 451 as shown in Fig. 11, but is not limited thereto. Fig. 13 is a plan view showing a plurality of regions included in a resistor element according to one embodiment.

[0064] The resistor 450 includes, in the dynamic shielding region DA, a first region S1 having a first shielding ratio, and a second region S2 disposed inside and spaced apart from the first region S1 and having a second shielding ratio greater than the first shielding ratio, as in the above embodiment. The resistor 450 also includes a third region S3 disposed between the first region S1 and the second region S2 in the dynamic shielding region DA and having a third shielding ratio greater than the first shielding ratio and less than the second shielding ratio. The third region S3 extends in the circumferential direction beyond the dynamic shielding region DA and has a uniform third shielding ratio in the extended region.

[0065] In the example shown in Fig. 13, the third region S3 does not extend over the entire circumference of the disk member 451. That is, in this embodiment, the fifth region S5 is disposed in other parts of the third region S3 in the circumferential direction in addition to other parts of the first region S1 in the circumferential direction. In other words, the fifth region S5 extends not only to the 44th and 45th rows of the resistor 450 but also to the 43rd row. As a result, the fifth region S5 exists in a part of the 43rd row of the resistor 450, but the third region S3 extends along the circumferential direction of the resistor 450 in most of the 43rd row.

[0066] The resistor 450 includes a sixth region S6 that is disposed inside the second region S2 and in other circumferential parts of the second region S2 and has a fourth shielding ratio smaller than the second shielding ratio and equal to the third shielding ratio, and that is disposed in other circumferential parts of the first region S1 and the fifth region S5 and has a sixth shielding ratio larger than the first shielding ratio. In the example shown in FIG. 13, the fourth region S4 is disposed on the entire circumference of the 40th row from the center (0th row) of the disk member and on parts of the 41st and 42nd rows, and has a fourth shielding ratio of 72%. The second region S2 is disposed in parts of the 41st and 42nd rows and has a second shielding ratio of 84%. The third region S3 is disposed in the 43rd row and has a third shielding ratio of 72%, which is the same as the fourth shielding ratio, which is different from the above-mentioned embodiment. The first region S1 is disposed in a portion of the 44th and 45th rows, and the first shielding ratio is 48%. The sixth region S6 is disposed in a portion of the 44th row, and the sixth shielding ratio is 86%.

[0067] According to this embodiment, the third region S3 having a uniform shielding rate extends along the circumferential direction of the resistor 450 in most of the 43rd row of the resistor 450. Therefore, the resistor 450 of this embodiment has an advantage over the resistor of the prior art. That is, the shielding member 481 is placed at a reference position such that the 42nd row of the resistor 450 is exposed in a portion where the plating thickness is normal, and plating is performed. In the prior art resistor, the shielding rate of the 41st to 43rd rows is higher than the shielding rate in the other circumferential directions, so the plating thickness tends to be thin. On the other hand, most of the 43rd row of the resistor 450 of this embodiment is uniformly arranged with the same shielding rate as the other circumferential directions, so that the influence of the current density distribution of the 41st and 42nd rows, which have different shielding rates in the other circumferential directions, is mitigated, and the thickness uniformity or coplanarity is less affected by the portion where the thickness is normal. As a result, according to this embodiment, the plating thickness of the peripheral portion of the substrate can be maintained at the normal thickness when the shielding member 481 is placed at the reference position.

[0068] Next, a description will be given of another aspect of the plating apparatus 1000 of this embodiment. Fig. 14 is a plan view that shows a schematic example of switching the arrangement position of the shielding member in accordance with the distribution of the plating thickness on the peripheral edge of the substrate.

[0069] In the above embodiment, an example in which the shielding mechanism 485 is configured to switch the shielding member 481 between the reference position, the shielding position, and the retracted position has been shown, but the present invention is not limited thereto. The shielding mechanism 485 may be configured to switch the shielding member 481 between the shielding position between the anode 430 and the substrate Wf and the retracted position retracted from between the anode 430 and the substrate Wf. FIG. 14 shows an example in which the shielding mechanism 485 switches the shielding member 481 between the shielding position and the retracted position. FIG. 14 also shows the switching of the position of the shielding member when a large number of holes in the resistor 450 are formed at equal intervals along the circumferential direction of the disk member.

[0070] In the above embodiment, the rotation mechanism 447 rotates the substrate holder 440 in one direction at a constant speed, but the present invention is not limited to this. The rotation mechanism 447 may be configured to rotate the substrate holder 440 so that a first portion Wf-e at a selected azimuth angle position of the substrate Wf is located in a dynamic shielding region DA defined by the resistor 450 and the shielding member 481 for a different time from a second portion Wf-f of the substrate that is located at an azimuth angle position different from the first portion and has the same arc length and radial position as the first portion. The dynamic shielding region DA is a region in which the shielding rate changes when the first portion Wf-e of the substrate stays in the dynamic shielding region DA compared to when the second portion Wf-f of the substrate stays in the dynamic shielding region DA.

[0071] 14, when the first portion Wf-e of the substrate includes a portion having a thicker plating thickness than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured to place the shielding member 481 in the shielding position when the first portion Wf-e of the substrate is located in the dynamic shielding region DA. Also, the shielding mechanism 485 is configured to place the shielding member 481 in the retracted position when the second portion Wf-f of the substrate is located in the dynamic shielding region DA.

[0072] In addition, the rotation mechanism 447 is configured to rotate the substrate holder 440 so that the first portion Wf-e (portion with a thicker film thickness) of the substrate Wf is positioned in the dynamic shielding region DA for a longer period of time than the second portion Wf-f (portion with a normal film thickness).

[0073] Fig. 15 is a diagram showing the relationship between the timing of shielding the first portion Wf-e of the substrate and the rotation speed of the substrate holder. The horizontal axis of the graph in Fig. 15 indicates the rotation position of the first portion Wf-e of the substrate Wf, and the vertical axis indicates the position of the shielding member (shielding position or retreated position) and the rotation speed (rotation direction) of the substrate holder 440. In this example, as shown in Fig. 15, when a specific position of the substrate (e.g., a notch of the substrate) is set as a reference (θ=0), the first portion Wf-e, where the plating deposition rate is to be suppressed, is present in the peripheral portion within the range from θ=θ1 to θ=θ2.

[0074] FIG. 15 shows the position of the shielding member and the rotation speed of the substrate holder when the additional suppression of the deposition rate of plating on the first portion Wf-e of the substrate Wf is performed once (the rotation direction of the substrate holder is switched twice). As shown in FIG. 15, the rotation mechanism 447 first rotates the substrate holder 440 in the first direction at a predetermined speed as indicated by the arrow A in FIG. 15. Then, when the position of θ1 of the substrate Wf reaches the center of the shielding member 481, the shielding mechanism 485 pushes the shielding member 481 to the shielding position. Then, when the position of θ2 of the substrate Wf reaches the center of the shielding member 481, the rotation mechanism 447 switches the rotation direction of the substrate holder 440 to rotate it in the second direction. Then, when the position of θ1 of the substrate Wf reaches the center of the shielding member 481, the rotation mechanism 447 switches the rotation direction of the substrate holder 440 to rotate it in the first direction.

[0075] The rotation mechanism 447 switches the rotation direction of the substrate holder 440 (rotates the substrate holder 440 back and forth) while the shielding member 481 is located at the shielding position, thereby making it possible to place the shielding member 481 at the shielding position for a period that is approximately three times longer than when the substrate holder 440 is rotated at a constant speed in the first direction, as shown in Fig. 15. Therefore, according to this embodiment, it is possible to strongly suppress the formation of a plating film thickness on the first portion Wf-e of the substrate Wf.

[0076] In the present embodiment, an example has been shown in which the rotation direction of the substrate holder 440 is reversed (the substrate holder 440 is rotated back and forth) when the first portion Wf-e of the substrate is located in the dynamic shielding region DA, but the present invention is not limited to this. The rotation mechanism may be configured to position the first portion Wf-e of the substrate in a time dynamic shielding region DA different from that of the second portion Wf-f of the substrate by increasing (speeding up) or decreasing (slowing down) the rotation speed of the substrate holder 440 when the first portion Wf-e of the substrate is located in the dynamic shielding region DA.

[0077] Fig. 16 is a plan view showing a schematic example of switching the position of the shielding member in accordance with the distribution of the plating thickness on the peripheral portion of the substrate. Fig. 16 shows an example in which the shielding mechanism 485 switches the position of the shielding member 481 between the reference position and the shielding position. Fig. 16 also shows switching of the position of the shielding member when a large number of holes in the resistor 450 are formed at equal intervals along the circumferential direction of the disk member.

[0078] 16, when the first portion Wf-e of the substrate includes a portion having a thicker plating thickness than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured to place the shielding member 481 in the shielding position when the first portion Wf-e of the substrate is located in the dynamic shielding region DA. Also, the shielding mechanism 485 is configured to place the shielding member 481 in the reference position when the second portion Wf-f of the substrate is located in the dynamic shielding region DA.

[0079] 15, the rotation mechanism 447 is configured to rotate the substrate holder 440 so that the first portion Wf-e of the substrate Wf is located in the dynamic shielding area DA for a longer period of time than the second portion Wf-f by switching the rotation direction of the substrate holder 440. Therefore, according to this embodiment, the formation of a plating film thickness in the first portion Wf-e of the substrate Wf can be strongly suppressed.

[0080] Fig. 17 is a plan view showing a schematic example of switching the position of the shielding member in accordance with the distribution of the plating thickness at the peripheral portion of the substrate. Fig. 17 shows an example in which the shielding mechanism 485 switches the shielding member 481 between the retracted position and the shielding position. Fig. 17 also shows the switching of the position of the shielding member when a large number of holes in the resistor 450 are formed non-uniformly along the circumferential direction of the disk member, as in the embodiment shown in Figs. 11 to 13.

[0081] 17, when the first portion Wf-e of the substrate includes a portion having a thicker plating thickness than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured to place the shielding member 481 in the shielding position when the first portion Wf-e of the substrate is located in the dynamic shielding region DA. Also, the shielding mechanism 485 is configured to place the shielding member 481 in the retracted position when the second portion Wf-f of the substrate is located in the dynamic shielding region DA.

[0082] 15, the rotation mechanism 447 is configured to rotate the substrate holder 440 so that the first portion Wf-e (portion with a thick film thickness) of the substrate Wf is located in the dynamic shielding area DA for a longer period of time than the second portion Wf-f (portion with a normal film thickness). Therefore, according to this embodiment, the formation of a plating film thickness in the first portion Wf-e of the substrate Wf can be strongly suppressed.

[0083] Fig. 18 is a plan view showing a schematic example of switching the position of the shielding member in accordance with the distribution of the plating thickness at the peripheral portion of the substrate. Fig. 18 shows an example in which the shielding mechanism 485 switches the position of the shielding member 481 between the reference position and the shielding position. Fig. 18 also shows the switching of the position of the shielding member when a large number of holes in the resistor 450 are formed non-uniformly along the circumferential direction of the disk member, as in the embodiment shown in Figs. 11 to 13.

[0084] 18, when the first portion Wf-e of the substrate includes a portion having a thicker plating thickness than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured to place the shielding member 481 in the shielding position when the first portion Wf-e of the substrate is located in the dynamic shielding region DA. Also, the shielding mechanism 485 is configured to place the shielding member 481 in the reference position when the second portion Wf-f of the substrate is located in the dynamic shielding region DA.

[0085] 15, the rotation mechanism 447 is configured to rotate the substrate holder 440 so that the first portion Wf-e (portion with a thick film thickness) of the substrate Wf is located in the dynamic shielding area DA for a longer period of time than the second portion Wf-f (portion with a normal film thickness). Therefore, according to this embodiment, the formation of a plating film thickness in the first portion Wf-e of the substrate Wf can be strongly suppressed.

[0086] Fig. 19 is a plan view showing a schematic example of switching the position of the shielding member in accordance with the distribution of the plating thickness at the peripheral portion of the substrate. Fig. 19 shows an example in which the shielding mechanism 485 switches the shielding member 481 between the shielding position and the retracted position. Fig. 19 also shows the switching of the position of the shielding member when a large number of holes in the resistor 450 are formed non-uniformly along the circumferential direction of the disk member, as in the embodiment shown in Figs. 11 to 13.

[0087] 19, when the first portion Wf-e of the substrate includes a portion having a thinner plating thickness than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured to place the shielding member 481 in the retracted position when the first portion Wf-e of the substrate is located in the dynamic shielding region DA. Also, the shielding mechanism 485 is configured to place the shielding member 481 in the shielding position when the second portion Wf-f of the substrate is located in the dynamic shielding region DA.

[0088] 15, the rotation mechanism 447 is configured to rotate the substrate holder 440 so that the first portion Wf-e (portion with a thin film thickness) of the substrate Wf is located in the dynamic shielding area DA for a longer period of time than the second portion Wf-f (portion with a normal film thickness). Therefore, according to this embodiment, the formation of a plating film thickness in the first portion Wf-e of the substrate Wf can be strongly promoted.

[0089] Fig. 20 is a plan view showing a schematic example of switching the position of the shielding member according to the distribution of the plating thickness at the peripheral portion of the substrate. Fig. 20 shows an example in which the shielding mechanism 485 switches the position of the shielding member 481 between the reference position, the shielding position, and the retracted position. Fig. 20 also shows the switching of the position of the shielding member when a large number of holes in the resistor 450 are formed non-uniformly along the circumferential direction of the disk member, as in the embodiment shown in Figs. 11 to 13.

[0090] 20, when the first portion Wf-e1 of the substrate includes a portion having a thicker plating thickness than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured to place the shielding member 481 in the shielding position when the first portion Wf-e1 of the substrate is located in the dynamic shielding region DA. When the first portion Wf-e2 of the substrate includes a portion having a thinner plating thickness than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured to place the shielding member 481 in the retracted position when the first portion Wf-e2 of the substrate is located in the dynamic shielding region DA. The shielding mechanism 485 is configured to place the shielding member 481 in the reference position when the second portion Wf-f of the substrate is located in the dynamic shielding region DA.

[0091] 15, the rotation mechanism 447 is configured to rotate the substrate holder 440 so that the first portions Wf-e1 (thick film thickness portion) and e2 (thin film thickness portion) of the substrate Wf are located in the dynamic shielding region DA for a longer time than the second portion Wf-f (normal film thickness portion). Therefore, according to this embodiment, it is possible to strongly suppress the formation of a plating film thickness in the first portion Wf-e1 of the substrate Wf and strongly promote the formation of a plating film thickness in the first portion Wf-e2 of the substrate Wf.

[0092] Although several embodiments of the present invention have been described above, the above-mentioned embodiments of the present invention are intended to facilitate understanding of the present invention and do not limit the present invention. The present invention may be modified or improved without departing from the spirit thereof, and the present invention naturally includes equivalents thereof. Furthermore, any combination or omission of each component described in the claims and specification is possible within the scope of solving at least a part of the above-mentioned problems or achieving at least a part of the effects.

[0093] The present application discloses, as one embodiment, a plating apparatus including: a plating tank configured to contain a plating solution; an anode disposed in the plating tank; a substrate holder configured to hold a substrate with its surface to be plated facing downward; a lifting mechanism configured to raise and lower the substrate holder; a rotation mechanism configured to rotate the substrate holder; a shielding member capable of shielding an electric field formed between the anode and the substrate; and a shielding mechanism configured to switch and position the shielding member among a reference position between the anode and the substrate, a shielding position in which the electric field shielding area is larger than that of the reference position, and a retracted position in which the shielding member is retracted from between the anode and the substrate.

[0094] In addition, as one embodiment, the present application discloses a plating apparatus in which the shielding mechanism is configured to switch the position of the shielding member among the reference position, the shielding position, and the retracted position depending on the distribution of the plating film thickness formed on the peripheral portion of the substrate.

[0095] In addition, the present application discloses, as one embodiment, a plating apparatus further including a film thickness sensor configured to measure a plating film thickness on the peripheral portion of the substrate, and the shielding mechanism is configured to switch and position the shielding member among the reference position, the shielding position, and the retracted position depending on the distribution of the plating film thickness on the peripheral portion of the substrate measured by the film thickness sensor.

[0096] The present application also discloses, as one embodiment, a plating apparatus, wherein the shielding mechanism is configured to place the shielding member at the reference position with respect to a first peripheral portion of the substrate where a first plating thickness is formed, to place the shielding member at the shielding position with respect to a second peripheral portion of the substrate where a second plating thickness that is thicker than the first plating thickness is formed, and to place the shielding member at the retracted position with respect to a third peripheral portion of the substrate where a third plating thickness that is thinner than the first plating thickness is formed.

[0097] In addition, as one embodiment, the present application discloses a plating apparatus in which the shielding mechanism is configured to switch and position the shielding member among the reference position, the shielding position, and the retracted position depending on the type of substrate held by the substrate holder.

[0098] Furthermore, as one embodiment, the present application discloses a plating method including a lowering step of lowering into a plating tank a substrate holder that holds a substrate with its surface to be plated facing downward, a rotating step of rotating the substrate holder, a plating step of applying a plating process to the surface to be plated of the substrate that has been lowered into the plating tank, and a shielding step of switching and positioning a shielding member capable of shielding an electric field formed between an anode and a substrate arranged in the plating tank among a reference position between the anode and the substrate, a shielding position in which the electric field shielding area is larger than the reference position, and a retracted position retracted from between the anode and the substrate.

[0099] In addition, as one embodiment, the present application discloses a plating method, in which the shielding step is configured to switch and position the shielding member among the reference position, the shielding position, and the retracted position depending on the distribution of the plating film thickness formed on the peripheral portion of the substrate.

[0100] In addition, the present application discloses, as one embodiment, a plating method further including a measurement step of measuring a plating thickness of the peripheral portion of the substrate, and the shielding step is configured to switch and position the shielding member among the reference position, the shielding position, and the retracted position depending on the distribution of the plating thickness of the peripheral portion of the substrate measured by the measurement step.

[0101] The present application also discloses, as one embodiment, a plating method, wherein the shielding step includes a first positioning step of positioning the shielding member at the reference position with respect to a first peripheral portion of the substrate where a first plating thickness is formed, a second positioning step of positioning the shielding member at the shielding position with respect to a second peripheral portion of the substrate where a second plating thickness thicker than the first plating thickness is formed, and a third positioning step of positioning the shielding member at the retracted position with respect to a third peripheral portion of the substrate where a third plating thickness thinner than the first plating thickness is formed.

[0102] In addition, the present application discloses, as one embodiment, a plating method further including a determination step of determining a type of substrate held by the substrate holder, and the shielding step is configured to switch and position the shielding member among the reference position, the shielding position, and the retracted position depending on the type of substrate determined in the determination step.

[0103] The present application also provides, as one embodiment, a plating tank configured to contain a plating solution, an anode disposed in the plating tank, a substrate holder configured to hold a substrate with a surface to be plated facing downward, a resistor disposed between the anode and the substrate holder and having a local shielding region, a lifting mechanism configured to lift and lower the substrate holder, a rotation mechanism configured to rotate the substrate holder, a shielding member capable of shielding an electric field formed between the anode and the substrate, and a method of connecting the shielding member to the anode and the substrate. The present invention discloses a plating apparatus including: a shielding mechanism configured to be positioned between a shielding position between the anode and a substrate and a retracted position retracted from between the anode and the substrate, wherein the rotation mechanism is configured to rotate the substrate holder such that a first portion at a selected azimuthal position of the substrate is positioned in a dynamic shielding region where the resistor and the shielding member overlap when the shielding member is positioned at the shielding position for a different time than a second portion of the substrate at a different azimuthal position from the first portion and having the same arc length and radial position as the first portion.

[0104] The present application also discloses, as one embodiment, a plating apparatus, wherein the rotation mechanism is configured to position the first portion of the substrate in the dynamic shielding region for a different time than the second portion of the substrate by increasing or decreasing the rotation speed of the substrate holder or reversing the rotation direction of the substrate holder when the first portion of the substrate is located in the dynamic shielding region.

[0105] The present application also discloses, as one embodiment, a plating apparatus, in which the first portion of the substrate includes a portion having a thicker or thinner plating film thickness than the second portion of the substrate.

[0106] The present application also discloses, as one embodiment, a plating apparatus in which, when a first portion of the substrate includes a portion having a thicker plating thickness than the second portion of the substrate, the shielding mechanism is configured to position the shielding member at the shielding position when the first portion of the substrate is located in the dynamic shielding area.

[0107] The present application also discloses, as one embodiment, a plating apparatus in which, when a first portion of the substrate includes a portion having a thinner plating thickness than the second portion of the substrate, the shielding mechanism is configured to place the shielding member in the retracted position when the first portion of the substrate is located in the dynamic shielding area.

[0108] The present application also discloses, as one embodiment, a plating apparatus in which the dynamic shielding region has a shielding rate that changes when a first portion of the substrate resides in the dynamic shielding region compared to when a second portion of the substrate resides in the dynamic shielding region.

[0109] The present application also provides, as one embodiment, a plating tank configured to contain a plating solution, an anode disposed in the plating tank, a substrate holder configured to hold a substrate with a surface to be plated facing downward, a resistor disposed between the anode and the substrate holder and having a plurality of holes penetrating the anode side and the substrate holder side, a lifting mechanism configured to lift and lower the substrate holder, a rotation mechanism configured to rotate the substrate holder, a shielding member capable of shielding an electric field formed between the anode and the substrate, and a shielding mechanism configured to position the shielding member between a shielding position between the anode and the substrate and a retracted position retracted from between the anode and the substrate, the dynamic shielding area overlapping with the shielding member arranged at the shielding position includes a first area having a first shielding ratio, a second area arranged inside and spaced apart from the first area and having a second shielding ratio greater than the first shielding ratio, and a third area arranged between the first area and the second area and having a third shielding ratio greater than the first shielding ratio and less than the second shielding ratio, the third area extending along a circumferential direction beyond the dynamic shielding area and having the third shielding ratio uniformly in the extended area, and the resistor includes a fourth area arranged inside the second area and in another circumferential portion of the second area and having a fourth shielding ratio smaller than the second shielding ratio and equal to the third shielding ratio.

[0110] The present application also discloses, as one embodiment, a plating apparatus in which the resistor further includes a fifth region arranged in another circumferential portion of the first region and another circumferential portion of the third region and having an opening larger than the hole.

[0111] The present application also discloses, as one embodiment, a plating apparatus in which the resistor further includes a sixth region arranged in another circumferential portion of the first region and the fifth region and having a sixth shielding ratio greater than the first shielding ratio.

[0112] The present application also discloses, as one embodiment, a plating apparatus, wherein the first region has an area that is less than 0.35% of a total area of ​​the resistor element that faces a substrate held by the substrate holder. [Explanation of symbols]

[0113] 400 Plating Module 410 Plating tank 430 Anode 440 PCB Holder 443 Lifting Mechanism 447 Rotation Mechanism 450 Resistor 452 holes 454 Aperture 481 Shielding material 485 Shielding mechanism 490 Film Thickness Sensor 1000 Plating Equipment Wf substrate Wf-a Plated surface Wf-b First periphery Wf-c Second Periphery Wf-d Third Periphery Wf-e 1st part Wf-f Second part DA dynamic occlusion area S1 First Area S2 Second Area S3 The third area S4 The Fourth Region S5 The fifth area S6 The Sixth Region

Claims

1. A plating tank configured to contain a plating solution, an anode placed in the aforementioned plating tank, A substrate holder configured to hold the substrate with the plated surface facing downwards, A resistor is positioned between the anode and the substrate holder and has a plurality of holes that penetrate the anode side and the substrate holder side. A lifting mechanism configured to raise and lower the substrate holder, A rotating mechanism configured to rotate the substrate holder, A shielding member capable of shielding the electric field formed between the anode and the substrate, A shielding mechanism configured to switch the position of the shielding member between a reference position between the anode and the substrate, a shielding position where the electric field shielding area is larger than that of the reference position, and a retracted position where the shielding member is moved away from between the anode and the substrate, Includes, The resistor includes, in a dynamic shielding region overlapping with the shielding member positioned at the shielding location, a first region having a first shielding ratio, a second region positioned inward and spaced apart from the first region and having a second shielding ratio greater than the first shielding ratio, and a third region positioned between the first region and the second region and having a third shielding ratio greater than the first shielding ratio and less than the second shielding ratio. Plating equipment.

2. The shielding mechanism is configured to switch the position of the shielding member between the reference position, the shielding position, and the retracted position, depending on the distribution of the plating thickness formed on the periphery of the substrate. The plating apparatus according to claim 1.

3. The present invention further includes a film thickness sensor configured to measure the plating film thickness at the peripheral edge of the substrate, The shielding mechanism measures the plating thickness at the periphery of the substrate as measured by the film thickness sensor. Depending on the distribution, the shielding member is configured to be positioned by switching between the reference position, the shielding position, and the retracted position. The plating apparatus according to claim 1.

4. The shielding mechanism is configured such that the shielding member is positioned at the reference position relative to the first peripheral edge of the substrate on which the first plating film thickness is formed, the shielding member is positioned at the shielding position relative to the second peripheral edge of the substrate on which a second plating film thickness thicker than the first plating film thickness is formed, and the shielding member is positioned at the retracted position relative to the third peripheral edge of the substrate on which a third plating film thickness thinner than the first plating film thickness is formed. The plating apparatus according to claim 2 or 3.

5. The shielding mechanism is configured to switch the position of the shielding member between the reference position, the shielding position, and the retracted position, depending on the type of substrate held in the substrate holder. The plating apparatus according to claim 1.

6. A plating tank configured to contain a plating solution, an anode placed in the aforementioned plating tank, A substrate holder configured to hold the substrate with the plated surface facing downwards, A resistor is positioned between the anode and the substrate holder and has a plurality of holes that penetrate the anode side and the substrate holder side. A shielding member capable of shielding the electric field formed between the anode and the substrate, A plating method using a plating apparatus having, A lowering step involves lowering the substrate holder, which holds the substrate with the surface to be plated facing downward, into the plating tank, A rotation step of rotating the substrate holder, A plating step of applying a plating treatment to the surface of the substrate to be plated, which has been lowered into the plating tank, A shielding step involves switching the position of the shielding member, which is capable of shielding the electric field formed between the anode and the substrate arranged in the plating tank, between a reference position between the anode and the substrate, a shielding position where the electric field shielding area is larger than that of the reference position, and a retracted position where the shielding member is retracted from between the anode and the substrate. Includes, The resistor includes, in a dynamic shielding region overlapping with the shielding member positioned at the shielding location, a first region having a first shielding ratio, a second region positioned inward and spaced apart from the first region and having a second shielding ratio greater than the first shielding ratio, and a third region positioned between the first region and the second region and having a third shielding ratio greater than the first shielding ratio and less than the second shielding ratio. Plating method.

7. The shielding step is configured to switch the position of the shielding member between the reference position, the shielding position, and the retracted position, depending on the distribution of the plating thickness formed on the periphery of the substrate. The plating method according to claim 6.

8. The method further includes a measurement step of measuring the plating thickness at the peripheral edge of the substrate, The shielding step is configured to switch the position of the shielding member between the reference position, the shielding position, and the retracted position according to the distribution of the plating film thickness at the periphery of the substrate measured by the measurement step. The plating method according to claim 6.

9. The shielding step includes: a first positioning step of positioning the shielding member at the reference position relative to the first peripheral edge of the substrate on which the first plating film thickness is formed; a second positioning step of positioning the shielding member at the shielding position relative to the second peripheral edge of the substrate on which a second plating film thickness thicker than the first plating film thickness is formed; and a third positioning step of positioning the shielding member at the retracted position relative to the third peripheral edge of the substrate on which a third plating film thickness thinner than the first plating film thickness is formed. The plating method according to claim 7 or 8.

10. The method further includes a determination step of determining the type of substrate held in the substrate holder, The shielding step is configured to switch the shielding member between the reference position, the shielding position, and the retracted position, depending on the type of substrate determined in the determination step. The plating method according to claim 6.

11. A plating tank configured to contain a plating solution, an anode placed in the aforementioned plating tank, A substrate holder configured to hold the substrate with the plated surface facing downwards, A resistor is disposed between the anode and the substrate holder and has a local shielding region, A lifting mechanism configured to raise and lower the substrate holder, A rotating mechanism configured to rotate the substrate holder, A shielding member capable of shielding the electric field formed between the anode and the substrate, A shielding mechanism is configured to position the shielding member between a shielding position between the anode and the substrate and a retracted position where the shielding member is moved away from the space between the anode and the substrate. Includes, The rotation mechanism is configured to rotate the substrate holder so that a first portion of the substrate at a selected azimuth angle position is positioned in a dynamic shielding region where the resistor and the shielding member overlap when the shielding member is placed in the shielding position, at a different time than a second portion of the substrate that is at a different azimuth angle position than the first portion and has the same arc length and radius position as the first portion. The resistor includes, in the dynamic shielding region overlapping with the shielding member positioned at the shielding location, a first region having a first shielding ratio, a second region positioned inward and spaced apart from the first region and having a second shielding ratio greater than the first shielding ratio, and a third region positioned between the first region and the second region and having a third shielding ratio greater than the first shielding ratio and less than the second shielding ratio. Plating equipment.

12. The rotation mechanism is configured to position the first portion of the substrate in the dynamic shielding region for a different time than the second portion of the substrate by increasing or decreasing the rotation speed of the substrate holder or reversing the rotation direction of the substrate holder when the first portion of the substrate is located in the dynamic shielding region. The plating apparatus according to claim 11.

13. The first portion of the substrate includes a portion with a thicker or thinner plating film than the second portion of the substrate. The plating apparatus according to claim 12.

14. If the first portion of the substrate includes a portion with a thicker plating film than the second portion of the substrate, The shielding mechanism is in place when the first portion of the substrate is located in the dynamic shielding region. The shielding member is configured to be positioned at the shielding location. The plating apparatus according to claim 13.

15. If the first portion of the substrate includes a portion in which the plating film thickness is thinner than that of the second portion of the substrate, The shielding mechanism is configured to position the shielding member in the retracted position when the first portion of the substrate is located in the dynamic shielding region. The plating apparatus according to claim 13.

16. The dynamic shielding region is such that when the first portion of the substrate is in the dynamic shielding region, the shielding rate changes compared to when the second portion of the substrate is in the dynamic shielding region. The plating apparatus according to claim 15.

17. A plating tank configured to contain a plating solution, an anode placed in the aforementioned plating tank, A substrate holder configured to hold the substrate with the plated surface facing downwards, A resistor is positioned between the anode and the substrate holder and has a plurality of holes that penetrate the anode side and the substrate holder side. A lifting mechanism configured to raise and lower the substrate holder, A rotating mechanism configured to rotate the substrate holder, A shielding member capable of shielding the electric field formed between the anode and the substrate, A shielding mechanism is configured to position the shielding member between a shielding position between the anode and the substrate and a retracted position where the shielding member is moved away from the space between the anode and the substrate. Includes, The resistor includes, in a dynamic shielding region overlapping with the shielding member positioned at the shielding location, a first region having a first shielding ratio, a second region positioned inward and spaced apart from the first region and having a second shielding ratio greater than the first shielding ratio, and a third region positioned between the first region and the second region and having a third shielding ratio greater than the first shielding ratio and less than the second shielding ratio, wherein the third region extends circumferentially beyond the dynamic shielding region and uniformly has the third shielding ratio in the extended region. The resistor is located inside the second region and in other parts of the circumferential direction of the second region, and includes a fourth region having a fourth shielding ratio that is less than the second shielding ratio and the same as the third shielding ratio. Plating equipment.

18. The resistor further includes a fifth region having an opening larger than the hole, which is located in the other circumferential portion of the first region and the other circumferential portion of the third region. The plating apparatus according to claim 17.

19. The resistor further includes a sixth region located in the other circumferential portions of the first region and the fifth region, having a sixth shielding ratio greater than the first shielding ratio. The plating apparatus according to claim 18.

20. The first region has an area of ​​less than 0.35% of the total area of ​​the resistor facing the substrate held in the substrate holder. A plating apparatus according to any one of claims 17 to 19.

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