Matcher, substrate processing apparatus, method of manufacturing semiconductor device, program and substrate processing method

Abstract

A technology is provided that enables sufficient stabilization of plasma generation by avoiding impedance mismatch. The technology comprises: an input unit for inputting a high frequency; an output unit for outputting the high frequency; a matching unit having a variable inductor capable of varying the amount of inductance; and an inductance variable mechanism unit for varying the inductance of the variable inductor, wherein the variable inductor is composed of a coil and the inductance is varied by varying the pitch of the coil, and the inductance variable mechanism unit has a fixed part for fixing the coil and a movable part for varying the pitch of the coil, wherein the movable part is configured to move by a rotation mechanism, and the rotation mechanism includes a rotation shaft for moving the movable part; a first gear for rotating the rotation shaft; and a second gear for rotating the first gear.

Description

Technology Field

[0001] The present disclosure relates to a matching device, a substrate processing device, a method for manufacturing a semiconductor device, a program, and a substrate processing method. Background Technology

[0002] As a process step in the manufacturing process of a semiconductor device, a substrate is introduced into the processing chamber of a substrate processing device, and raw material gas and reaction gas are supplied into the processing chamber to form various films, such as insulating films, semiconductor films, and conductive films, on the substrate, or to remove various films, thereby performing substrate processing.

[0003] In mass production devices that require low-temperature processing, such as when forming fine patterns, it is necessary to supply a much larger amount of activated reaction gas than usual so that the surface reaction of the wafer processing does not fall into a rate-limiting state. Prior art literature

[0004] 1. Japanese Patent Publication No. 2007-324477 The problem to be solved

[0005] In this regard, although substrate processing is generally performed using plasma generated by a high-frequency power source, there are cases where the characteristics become non-uniform due to impedance mismatch caused by individual differences among the components within the matching unit, resulting in variations in the amount of active species generated.

[0006] The present disclosure provides a technique that can stabilize plasma generation by avoiding the impedance matching mismatch described above. means of solving the problem

[0007] According to one embodiment of the present disclosure, a technology is provided comprising: an input unit for inputting a high frequency; an output unit for outputting the high frequency; a matching unit having a variable inductor capable of varying the amount of inductance; and an inductance variable mechanism unit for varying the inductance of the variable inductor, wherein the variable inductor is composed of a coil and the inductance is varied by varying the pitch of the coil, and the inductance variable mechanism unit has a fixed part for fixing the coil and a movable part for varying the pitch of the coil, wherein the movable part is configured to move by a rotation mechanism, and the rotation mechanism comprises a rotation shaft for moving the movable part; a first gear for rotating the rotation shaft; and a second gear for rotating the first gear. Effects of the invention

[0008] According to the present disclosure, it is possible to stabilize the generation of plasma by avoiding impedance matching irregularities. Brief explanation of the drawing

[0009] FIG. 1 is a schematic diagram of a vertical processing furnace of a substrate processing apparatus preferably used in the first embodiment of the present disclosure, and is a drawing showing the processing furnace portion in a longitudinal cross-section. Figure 2 is a cross-sectional view AA of the substrate processing device shown in Figure 1. FIG. 3 is a drawing showing an example of an equivalent electrical circuit of a matching device in an embodiment of the present disclosure. FIG. 4 is a drawing showing a modified example of an equivalent electrical circuit of a matching device according to an embodiment of the present disclosure. FIG. 5 is a schematic diagram of the movable connection part and the variable inductance mechanism part shown in FIG. 4. FIG. 6 is a schematic diagram of the controller of the substrate processing device shown in FIG. 1, and is a block diagram showing an example of the control system of the controller. FIG. 7 is a flowchart showing an example of a substrate processing process using the substrate processing device illustrated in FIG. 1. FIG. 8 is a schematic diagram of a vertical processing furnace of a substrate processing apparatus preferably used in the second embodiment of the present disclosure, and is a cross-sectional view of the processing furnace portion. Specific details for implementing the invention

[0010] Hereinafter, one embodiment of the present disclosure will be described with reference mainly to FIGS. 1 to 5. Furthermore, the drawings used in the following description are all schematic, and the relationship of dimensions of each element and the ratio of each element shown in the drawings do not necessarily correspond to reality. Also, the relationship of dimensions of each element and the ratio of each element do not necessarily correspond to one another among multiple drawings.

[0011] (First embodiment)

[0012] (1) Configuration of the substrate processing device

[0013] (Heating device)

[0014] As illustrated in FIG. 1, the processing furnace (202) of the vertical substrate processing device includes a heater (207) as a heating device (heating mechanism, heating part). The heater (207) is cylindrical in shape and is installed vertically by being supported on a support plate. The heater (207) also functions as an activation mechanism (excitation part) that activates (excites) gas with heat.

[0015] (Processing Room)

[0016] An electrode fixing member (301), described later, is installed inside the heater (207), and an electrode (300) of a plasma generating unit, described later, is installed inside the electrode fixing member (301). Additionally, a reaction tube (203) is installed inside the electrode (300) in a concentric shape with respect to the heater (207). The reaction tube (203) is composed of a heat-resistant material, such as quartz (SiO2) or silicon carbide (SiC), and is formed in a cylindrical shape with the top closed and the bottom open. Below the reaction tube (203), a manifold (209) is installed in a concentric shape with respect to the reaction tube (203). The manifold (209) is composed of a metal, such as stainless steel (SUS), and is formed in a cylindrical shape with the top and bottom open. The upper part of the manifold (209) is connected to the lower part of the reaction tube (203) and is configured to support the reaction tube (203). An O-ring (220a) serving as a sealing member is installed between the manifold (209) and the reaction tube (203). As the manifold (209) is supported by the heater base, the reaction tube (203) is installed vertically. The processing vessel (reaction vessel) is mainly composed of the reaction tube (203) and the manifold (209). A processing chamber (201) is formed in the hollow part of the processing vessel. The processing chamber (201) is configured to accommodate multiple wafers (200) as substrates. The wafers (200) are processed within the processing chamber (201). Furthermore, the processing vessel is not limited to the configuration described above, and there are cases where only the reaction tube (203) is referred to as the processing vessel.

[0017] (Gas Supply Department)

[0018] In the processing chamber (201), nozzles (249a, 249b) serving as first and second supply units are respectively installed to penetrate the side wall of the manifold (209). The nozzles (249a, 249b) are also referred to as the first nozzle and the second nozzle, respectively. The nozzles (249a, 249b) are composed of a heat-resistant material such as quartz or SiC, for example. Gas supply pipes (232a, 232b) are respectively connected to the nozzles (249a, 249b). Thus, two nozzles (249a, 249b) and two gas supply pipes (232a, 232b) are installed in the processing vessel, making it possible to supply multiple types of gas into the processing chamber (201). In addition, if only the reaction tube (203) is used as the treatment vessel, the nozzles (249a, 249b) may be installed to penetrate the side wall of the reaction tube (203).

[0019] In the gas supply pipes (232a, 232b), a mass flow controller (MFC) (241a, 241b), which is a flow controller (flow control unit), and a valve (243a, 243b), which is an opening and closing valve, are respectively installed in order from the upstream side of the gas flow. A gas supply pipe (232c, 232d) that supplies inert gas is respectively connected downstream from the valve (243a, 243b) of the gas supply pipes (232a, 232b). In the gas supply pipes (232c, 232d), an MFC (241c, 241d) and a valve (243c, 243d) are respectively installed in order from the upstream direction.

[0020] As illustrated in FIGS. 1 and 2, nozzles (249a, 249b) are each installed in a circular space in the planar view between the inner wall of the reaction tube (203) and the wafer (200), rising from the bottom of the inner wall of the reaction tube (203) upward toward the loading direction of the wafer (200). That is, nozzles (249a, 249b) are each installed perpendicular to the surface (flat surface) of the wafer (200) on the side of the end (periphery) of each wafer (200) brought into the processing chamber (201). Gas supply holes (250a, 250b) for supplying gas are each installed on the side of the nozzles (249a, 249b). The gas supply hole (250a) is opened toward the center of the reaction tube (203) so that gas can be supplied toward the wafer (200). Gas supply ports (250a, 250b) are each installed in multiple numbers from the bottom to the top of the reaction tube (203).

[0021] In this manner, in the present embodiment, gas is conveyed through nozzles (249a, 249b) arranged in a vertically elongated, annular space in a planar view, i.e., a cylindrical space, defined by the inner wall of the side wall of the reaction tube (203) and the end (peripheral) of a plurality of wafers (200) arranged within the reaction tube (203). Gas is first ejected into the reaction tube (203) near the wafer (200) from gas supply holes (250a, 250b) each opened in the nozzles (249a, 249b). Then, the main flow of gas within the reaction tube (203) is directed in a direction parallel to the surface of the wafer (200), i.e., a horizontal direction. With this configuration, gas can be supplied uniformly to each wafer (200), thereby making it possible to improve the uniformity of the film thickness of the film formed on each wafer (200). The gas flowing over the surface of the wafer (200), i.e., the residual gas after the reaction, flows toward the exhaust port, i.e., the exhaust pipe (231) described later. However, the direction of this residual gas flow is appropriately determined according to the location of the exhaust port and is not limited to a vertical direction.

[0022] From the gas supply pipe (232a), raw material (raw material gas) is supplied into the processing chamber (201) through the MFC (241a), valve (243a), and nozzle (249a).

[0023] From the gas supply pipe (232b), the reactant (reaction gas) is supplied into the processing chamber (201) through the MFC (241b), valve (243b), and nozzle (249b).

[0024] From the gas supply pipes (232c, 232d), inert gas is supplied into the processing chamber (201) through the MFC (241c, 241d), valve (243c, 243d), and nozzle (249a, 249b), respectively.

[0025] A raw material supply system as a first gas supply system is mainly configured by a gas supply pipe (232a), an MFC (241a), and a valve (243a). A reactant supply system (reaction gas supply system) as a second gas supply system is mainly configured by a gas supply pipe (232b), an MFC (241b), and a valve (243b). An inert gas supply system is mainly configured by gas supply pipes (232c, 232d), an MFC (241c, 241d), and a valve (243c, 243d). The raw material supply system, the reactant supply system, and the inert gas supply system are also simply referred to as the gas supply system (gas supply section).

[0026] (Substrate support)

[0027] As illustrated in FIG. 1, the boat (217) serving as a substrate support is configured to support multiple wafers (200), for example, 25 to 200 wafers, in a horizontal position and aligned vertically, that is, arranged at intervals. The boat (217) is composed of a heat-resistant material, such as quartz or SiC. At the bottom of the boat (217), an insulating plate (218), composed of a heat-resistant material such as quartz or SiC, is supported in multiple stages. With this configuration, heat from the heater (207) is difficult to transfer to the seal cap (219). However, the present embodiment is not limited to this form. For example, instead of installing an insulating plate (218) at the bottom of the boat (217), an insulating tube composed of a tubular member made of a heat-resistant material such as quartz or SiC may be installed.

[0028] (Plasma generation unit)

[0029] Next, the plasma generation unit will be described with reference to FIGS. 1 to 5.

[0030] A plasma generating electrode (300) is installed outside the reaction tube (203), that is, outside the processing vessel (processing chamber (201)). By applying power to the electrode (300), it is configured to enable the gas to be plasma-enhanced and excited inside the reaction tube (203), that is, inside the processing vessel (processing chamber (201)), that is, to excite the gas into a plasma state. Below, by simply applying power to excite the gas into a plasma state, the plasma inside the reaction tube (203), that is, inside the processing vessel (processing chamber (201)), is configured to generate capacitively coupled plasma (CCP).

[0031] Specifically, as shown in FIG. 2, an electrode (300) and an electrode fixing member (301) for fixing the electrode (300) are disposed between the heater (207) and the reaction tube (203). The electrode fixing member (301) is disposed inside the heater (207), the electrode (300) is disposed inside the electrode fixing member (301), and the reaction tube (203) is disposed inside the electrode (300).

[0032] Additionally, as shown in FIGS. 1 and 2, the electrode (300) and the electrode holder (301) are each installed in a circular space in a planar view between the inner wall of the heater (207) and the outer wall of the reaction tube (203), extending from the bottom to the top of the outer wall of the reaction tube (203) in the arrangement direction of the wafer (200). The electrode (300) is installed parallel to the nozzle (249a, 249b). The electrode (300) and the electrode holder (301) are arranged and positioned in a concentric shape with respect to the reaction tube (203) and the heater (207) in a planar view, and are also arranged so as not to be in contact with the heater (207). Since the electrode fixture (301) is made of an insulating material (insulator) and is installed to cover at least a part of the electrode (300) and the reaction tube (203), the electrode fixture (301) may also be called a cover (quartz cover, insulating wall, insulating plate) or a cross-sectional arc cover (cross-sectional arc body, cross-sectional arc wall).

[0033] As illustrated in FIG. 2, a plurality of electrodes (300) are installed, and the plurality of electrodes (300) are fixed to the inner wall of an electrode fixing member (301). On the inner wall surface of the electrode fixing member (301), a projection (hook portion) (not shown) capable of hanging the electrode (300) is installed, and on the electrode (300), an opening (not shown) which is a through hole capable of inserting the projection is installed. By hanging the electrode (300) through the opening on the projection installed on the inner wall surface of the electrode fixing member (301), it is possible to fix the electrode (300) to the electrode fixing member (301). For example, two openings are provided for one electrode (300), and the electrode can be fixed by hanging two projections per electrode (300). That is, one electrode can be fixed at two locations. For example, as shown in FIG. 2, nine electrodes (300) are fixed to one electrode fixing member (301), and the configuration (unit) is made up of two pairs, so that 18 electrodes can be fixed to two electrode fixing members (301).

[0034] Here, the electrode fixture (301) and the electrode (300) may be referred to as an electrode unit. The electrode unit is preferably positioned to avoid the nozzle (249a, 249b) and the exhaust pipe (231), as shown in FIG. 2. FIG. 2 illustrates an example in which two electrode units are positioned to face each other with the center of the wafer (200) (reaction pipe (203)) in between, avoiding the nozzle (249a, 249b) and the exhaust pipe (231). FIG. 2 also illustrates an example in which two electrode units are positioned in a planar manner, that is, in a symmetrical manner, with the straight line L as the axis of symmetry. By arranging the electrode units in this manner, it becomes possible to place the nozzles (249a, 249b), the temperature sensor (263), and the exhaust pipe (231) outside the plasma generation area within the processing chamber (201), thereby suppressing plasma damage to these components, consumption and breakage of these components, and the generation of particles from these components. Where there is no need to specifically distinguish and explain in the present disclosure, they are described as electrodes (300).

[0035] In the electrode (300), a high frequency of, for example, 25 MHz or more and 35 MHz or less, more specifically, 27.12 MHz, is input from the high frequency power source (320) via a matching device (325), thereby generating plasma (active species) (302) within the reaction tube (203). By the plasma generated in this way, it becomes possible to supply plasma (302) for substrate processing from the surroundings of the wafer (200) to the surface of the wafer (200). The high frequency power source (320) supplies high frequency to the electrode (300).

[0036] A plasma generation unit (plasma excitation unit, plasma activation mechanism) is configured to primarily excite (activate) gas into a plasma state by means of an electrode (300). An electrode fixture (301), a matching unit (325), and an RF power supply (320) may be considered to be included in the plasma generation unit. The matching unit (325) is installed between a high-frequency power supply (320) that outputs a high frequency and the plasma generation unit. Additionally, as shown in FIG. 2, a plurality of high-frequency power supplies (320) and plasma generation units are installed in a vertical substrate processing device, and a matching unit (325) is installed between each of the plurality of high-frequency power supplies (320) and the plurality of plasma generation units.

[0037] It is preferable that the electrode (300) be configured with a thickness of 0.1 mm or more and 1 mm or less, and a width of 5 mm or more and 30 mm or less, so as to have sufficient strength and not significantly reduce the efficiency of wafer heating by the heat source. It is also preferable that it have a bending structure as a deformation suppression part to prevent deformation caused by heating of the heater (207). In that case, since the electrode (300) is placed between the quartz reaction tube (203) and the heater (207), the bending angle is appropriately 90° to 175° due to space constraints. Since a film is formed on the electrode surface due to thermal oxidation and may be peeled off by thermal stress, causing particles to be generated, care must be taken not to bend it excessively.

[0038] (Coordinater)

[0039] As illustrated in FIGS. 3 and 4, the matching unit (325) is composed of a first matching unit (load matching unit) (331) connected in parallel to the line (wiring) from the input (also called the input terminal) (2) to the output (also called the output terminal) (3), a second matching unit (phase matching unit) (335) connected in series to the line (wiring) from the input (2) to the output (3), and a movable connection unit (334). The input (2) may be referred to as an input unit that inputs high frequency. The output (3) may be referred to as an output unit that outputs high frequency. Both the first matching unit (331) and the second matching unit (335) are connected to the movable connection unit (334). The movable connection unit (334) is also connected to the input terminal (2) on the input side. The first matching unit (331) is also connected to ground (GND). The second matching unit (335) is also connected to the output terminal (3) on the output side. That is, the matching unit (325) comprises an input (2), an output (3), a movable connection unit (334) connected to the input (2), a first matching unit (331) connected between the movable connection unit (334) and ground (GND), and a second matching unit (335) connected between the movable connection unit (334) and the output (3). The output (3), which is the output unit, is installed in a processing room (201) that processes the substrate (200) and is connected to an electrode (300) installed in a plasma generating unit that generates plasma.

[0040] The first matching section (331) is configured by a series connection between the movable connection section (334) and the ground (GND) of a variable capacitor (load variable capacitor) (332) with a variable amount of capacitance and an inductor (load inductor) (333) with a fixed amount of inductance. The second matching section (335) is configured by a series connection between the movable connection section (334) and the output (3) of a variable inductor (phase variable inductor) (336) with a variable amount of inductance and a capacitor (phase capacitor) (337) with a fixed amount of capacitance (see FIG. 3) or a variable capacitor (phase variable capacitor) (338) with a variable amount of capacitance (see FIG. 4). That is, the second matching part (335) is configured to include a capacitor (337) or a variable capacitor (338).

[0041] The variable inductor (336) is placed inside the inductance variable mechanism (340) of FIG. 5, which will be described later, and is capable of changing (adjusting) the amount of inductance. That is, the variable inductor (336) is composed of a coil and is configured so that the inductance can be varied by varying the pitch of the coil. The variable capacitor (332) and the variable capacitor (338) include a variable mechanism (not shown) and are configured so that the amount of capacitance can be changed (adjusted).

[0042] The capacitance amount of each capacitor (332, 337, 338), the inductance amount of each inductor (333, 336), and the frequency of the high-frequency power supply (320) are appropriately selected and adjusted. By doing so, it is possible to achieve impedance matching between the input impedance of the matching device (325) and the output impedance of the high-frequency power supply (320), and between the output impedance of the matching device (325) and the load impedance of the electrode (300) and plasma (302) connected at the output (3) side. At this time, the high-frequency power supply (320) can supply power to the electrode (300) and plasma (302) without the high frequency being reflected in the middle.

[0043] Specifically, in the case of the circuit of the matching unit (325) of FIG. 3, the amount of capacitance of the variable capacitor (332) is adjusted so that the resistance component of the output impedance of the matching unit (325) matches the resistance component of the load impedance, and the frequency of the high-frequency power supply (320) is adjusted so that the reactance component of the output impedance of the matching unit (325) matches the reactance component of the load impedance in reverse order. In the case of the circuit of the matching unit (325) of Fig. 4, the amount of capacitance of the variable capacitor (332) is adjusted so that the resistance component of the output impedance of the matching unit (325) matches the resistance component of the load impedance, and the frequency of the high-frequency power supply (320) or the amount of capacitance of the variable capacitor (338) is adjusted so that the reactance component of the output impedance of the matching unit (325) matches the reactance component of the load impedance in reverse positive and negative.

[0044] Here, the variable inductor (336) pre-adjusts the amount of inductance to shift the impedance matching range, and does not adjust the amount of inductance simultaneously with the output of the high-frequency power of the high-frequency power source (320). As shown in FIG. 2, when using multiple high-frequency power sources (320), in order to avoid interference between them and impedance matching becoming mismatched in each matching device (325), it becomes possible to intentionally misalign the impedance matching positions, particularly the impedance matching frequency, through the aforementioned adjustment. Furthermore, among multiple semiconductor manufacturing devices, it becomes possible to match the impedance matching positions, particularly the impedance matching frequency. By doing so, it becomes possible to avoid mismatched impedance matching and stabilize the generation of plasma. Accordingly, it becomes possible to manufacture semiconductor devices through stable substrate processing using a substrate processing device capable of generating stable plasma. By doing so, it is possible to achieve an improvement in the yield of semiconductor devices or an improvement in the quality of semiconductor devices.

[0045] Additionally, the first matching part (331) may include an inductance variable mechanism part (340) in the inductor (333), and the inductor (333) itself may be removed.

[0046] (Variable inductance mechanism)

[0047] The variable inductance mechanism (340) illustrated in FIG. 5 consists of a housing (341), a large gear (342), a fixed shaft (343), a small gear (344), a rotating shaft (345), and a pressure plate (346). The housing (341) has a canopy shape, and the outer surface of the pressure plate (346) has the same shape as the inner surface of the housing (341). The housing (341) and the pressure plate (346) have a structure in which the inner surface of the housing (341) and the outer surface of the pressure plate (346) are in contact with each other, and the pressure plate (346) can move linearly inside the housing (341). The large gear (342) and the small gear (344) have gear shapes with the same pitch spacing and are structured to mesh with each other. The rotation axis (345) has a screw shape over more than half of its length, and the pressure plate (also simply called a plate) (346) has a screw hole shape, and both are connected at screw surfaces with the same pitch spacing. The large gear (342) is configured to rotate about an axis of a fixed shaft (343) fixed to the housing (341). The large gear (342) is configured to be able to rotate by an external force, for example, by hand force, and the rotational force of the large gear (342) is transmitted to a small gear (344) that contacts the gear surface, and the rotation axis (345) fixed to the small gear (344) is configured to rotate. A rotating shaft (345) introduced from the side of the housing (341) into the interior of the housing (341) is configured to rotate together with a small gear (344) and to allow a pressure plate (346) in contact with a screw hole surface to move linearly in the forward or backward direction within the interior of the housing (341). By this action, a variable inductance (336) having a coil shape (also referred to simply as a coil) can be extended. That is, by moving the pressure plate (346) linearly in the forward or backward direction within the interior of the housing (341), it is possible to shorten or lengthen the distance (gap) in the forward and backward direction between the coils constituting the variable inductance (336).That is, the variable inductance mechanism (340) varies the inductance by varying the pitch of the coil. Accordingly, it is possible to change the amount of inductance of the variable inductance (336). Also, as shown in FIGS. 3, 4 and 5, the variable inductor (336) includes a first connection part (6) and a second connection part (7). The first connection part (6) is connected to the movable connection plate (348) described later of the movable connection part (334). Also, the second connection part (7) is connected to capacitors (337, 338). Additionally, the large gear (342) may have a part of the large gear (342) protruding so that its face protrudes from the notch portion of the housing of the matching device (325) to facilitate external force.

[0048] That is, the variable inductance mechanism (340) includes a housing (341) as a fixed part that fixes the coil of the variable inductance (336), and a plate-shaped pressure plate (346) as a movable part that varies the pitch of the coil. The pressure plate (346), which is the movable part, is configured to be driven by a large gear (342), a fixed shaft (343), a small gear (344), and a rotating shaft (345) as a rotating mechanism. The rotating mechanism includes a rotating shaft (345) that drives the pressure plate (346), a small gear (344), which is a first gear that rotates the rotating shaft (345), and a large gear (342), which is a second gear that rotates the small gear (344), which is the first gear.

[0049] (Movable connection)

[0050] The movable connection part (334) illustrated in FIG. 5 consists of a connection screw (347), a movable connection plate (348), and a fixed connection plate (349). The first connection part (6) of the variable inductor (336) is connected to the movable connection plate (348), and the first matching part (331) and the input side connection terminal (2) are connected to the fixed connection plate (349). The connection screw (347) is connected to the fixed connection plate (349) through a screw surface of the same pitch, and the movable connection plate (348) can be moved by the amount of tightening of the connection screw (347). That is, if the tightening of the connection screw (347) is loosened, the movable connection plate (348) can move linearly according to the amount of extension of the variable inductor (336) by the aforementioned inductance variable mechanism (340). By tightening the connection screw (347), the movable connection plate (348) and the fixed connection plate (349) are connected, and the variable inductor (336) is electrically connected. In this way, in order to fix the amount of inductance of the variable inductor (336) to a predetermined value, it is preferable to maximize the tightening amount of the connection screw (347) so that the movable connection plate (348) is sandwiched between the head of the connection screw (347) and the fixed connection plate (349). Additionally, the movable connection part (334) may be used between the variable inductor (336) and the capacitor (337) or between the variable inductor (336) and the variable capacitor (338). In other words, the variable inductor (336) is connected to the movable connection part (334) and is connected to the input part (2) through the movable connection part (334). The movable connection part (334) is connected to the first matching part (331), which is the load matching part. The movable connection part (334) includes a movable connection plate (348), which is a movable member connected to a variable inductor (336), and a fixed connection plate (349), which is a fixed member for fixing the movable connection plate (348), which is the movable member. The movable connection part (334) is provided with a connecting screw (374) for fixing the movable connection plate (348), which is the movable member, to the fixed connection plate (349).The variable inductor (336) is connected to a movable connection plate (348), which is a movable member, and is electrically connected by the movable connection plate (348), which is a movable member, being fixed to a fixed connection plate (349), which is a fixed member, by a connection screw (374).

[0051] Here, it is desirable that the furnace pressure during substrate processing be controlled within a range of 10 Pa or more and 300 Pa or less. This is because if the furnace pressure is lower than 10 Pa, the mean free path of gas molecules becomes longer than the devi length of the plasma, and the plasma striking the furnace wall directly becomes prominent, making it difficult to suppress particle generation. Furthermore, if the furnace pressure is higher than 300 Pa, the plasma generation efficiency becomes saturated, so even if reaction gas is supplied, the amount of plasma generated does not change, and the reaction gas is consumed wastefully. At the same time, as the mean free path of gas molecules shortens, the transport efficiency of plasma active species to the wafer deteriorates.

[0052] In order to obtain high substrate processing capability at a substrate temperature of 500° or less, the electrode fixing member (301) is preferably arranged in a roughly arc shape with a central angle of 30° or more and 240° or less, and to avoid the generation of particles, it is desirable to avoid the exhaust pipe (231), nozzle (249a, 249b), etc., which are exhaust ports. That is, the electrode fixing member (301) is arranged on the outer circumference of the reaction tube (203) other than the location where the nozzle (249a, 249b), which is a gas supply part installed inside the reaction tube (203), and the exhaust pipe (231), which is a gas exhaust part, are installed. In this embodiment, two electrode fixing members (301) with a central angle of 110° are installed symmetrically on the left and right.

[0053] (Exhaust unit)

[0054] In the reaction pipe (203), as shown in FIG. 1, an exhaust pipe (231) is installed to exhaust the atmosphere within the processing room (201). A vacuum pump (246) as a vacuum exhaust device is connected to the exhaust pipe (231) through a pressure sensor (245) acting as a pressure detector (pressure detection unit) for detecting the pressure within the processing room (201) and an APC (Automatic Pressure Controller) valve (244) acting as an exhaust valve (pressure adjustment unit). The APC valve (244) is configured to perform vacuum exhaust and vacuum exhaust stoppage within the processing room (201) by opening and closing the valve while the vacuum pump (246) is in operation, and to adjust the pressure within the processing room (201) by adjusting the valve opening based on pressure information detected by the pressure sensor (245) while the vacuum pump (246) is in operation. The exhaust system is mainly composed of the exhaust pipe (231), the APC valve (244), and the pressure sensor (245). It is acceptable to consider the vacuum pump (246) as being included in the exhaust system. The exhaust pipe (231) is not limited to being installed in the reaction pipe (203), but may be installed in the manifold (209) just like the nozzles (249a, 249b).

[0055] (Peripheral devices)

[0056] Below the manifold (209), a seal cap (219) is installed as a cover body capable of hermetically sealing the lower opening of the manifold (209). The seal cap (219) is configured to make contact with the lower end of the manifold (209) from the vertical lower side. The seal cap (219) is made of a metal such as SUS, for example, and is formed in a disc shape. On the upper surface of the seal cap (219), an O-ring (220b) is installed as a sealing member that makes contact with the lower end of the manifold (209).

[0057] A rotating mechanism (267) for rotating the boat (217) is installed on the opposite side of the processing chamber (201) of the seal cap (219). The rotation axis (255) of the rotating mechanism (267) passes through the seal cap (219) and is connected to the boat (217). The rotating mechanism (267) is configured to rotate the wafer (200) by rotating the boat (217). The seal cap (219) is configured to be raised vertically by a boat elevator (115) which is a lifting mechanism installed vertically on the outside of the reaction tube (203). The boat elevator (115) is configured to allow the boat (217) to be brought in and out of the processing chamber (201) by raising the seal cap (219).

[0058] The boat elevator (115) is configured as a conveying device (conveying mechanism) that conveys the boat (217), i.e., the wafer (200), to and from the processing room (201). Additionally, a shutter (219s) is installed below the manifold (209) as a sealing device capable of hermetically closing the lower opening of the manifold (209) while the seal cap (219) is lowered by the boat elevator (115). The shutter (219s) is made of a metal such as SUS, for example, and is formed in a disc shape. An O-ring (220c) is installed on the upper surface of the shutter (219s) as a sealing member that contacts the lower end of the manifold (209). The opening and closing operation (lifting operation, rotation operation, etc.) of the shutter (219s) is controlled by a shutter opening and closing mechanism (115s).

[0059] A temperature sensor (263) as a temperature detector is installed inside the reaction tube (203). By adjusting the energization state of the heater (207) based on the temperature information detected by the temperature sensor (263), the temperature inside the processing room (201) becomes a desired temperature distribution. The temperature sensor (263) is installed along the inner wall of the reaction tube (203), just like the nozzles (249a, 249b).

[0060] (controller)

[0061] Next, the control device will be described with reference to FIG. 6. As shown in FIG. 6, the controller (121), which is the control unit (control device), is configured as a computer equipped with a CPU (Central Processing Unit) (121a), RAM (Random Access Memory) (121b), a memory device (121c), and an I / O port (121d). The RAM (121b), the memory device (121c), and the I / O port (121d) are configured to exchange data with the CPU (121a) through an internal bus (121e). An input / output device (122), such as a touch panel, is connected to the controller (121).

[0062] The memory device (121c) is composed of, for example, flash memory, HDD (Hard Disk Drive), SSD (Solid State Drive), etc. Within the memory device (121c), a control program that controls the operation of the substrate processing device, and a process recipe containing the sequence or conditions of the substrate processing described later, are stored so as to be readable. The process recipe is a combination of each sequence in the various processes (film deposition processing) described later, which is executed by the controller (121) on the substrate processing device to obtain a predetermined result, and functions as a program. Hereinafter, the process recipe and the control program are collectively referred to simply as a program. Also, the process recipe is referred to simply as a recipe. In this specification, when the term "program" is used, it may include only the recipe, only the control program, or both. The RAM (121b) is configured as a memory area (work area) where programs or data read by the CPU (121a) are temporarily stored.

[0063] The I / O port (121d) is connected to the aforementioned MFC (241a to 241d), valve (243a to 243d), pressure sensor (245), APC valve (244), vacuum pump (246), heater (207), temperature sensor (263), rotating mechanism (267), boat elevator (115), shutter opening / closing mechanism (115s), high-frequency power supply (320), etc.

[0064] The CPU (121a) is configured to read and execute a control program from the memory device (121c), and also to read a recipe from the memory device (121c) in accordance with the input of an operation command from the input / output device (122). The CPU (121a) is configured to control the rotation mechanism (267) according to the contents of the read recipe, the flow rate adjustment operation of various gases by the MFC (241a to 241d), the opening and closing operation of the valve (243a to 243d), the opening and closing operation of the APC valve (244) and the pressure adjustment operation by the APC valve (244) based on the pressure sensor (245), the starting and stopping of the vacuum pump (246), the temperature adjustment operation of the heater (207) based on the temperature sensor (263), the forward and reverse rotation of the boat (217) by the rotation mechanism (267), the rotation angle and rotation speed adjustment operation, the lifting operation of the boat (217) by the boat elevator (115), the opening and closing operation of the shutter (219s) by the shutter opening and closing mechanism (115s), and the power supply of the high-frequency power supply (320).

[0065] The controller (121) can be configured by installing the aforementioned program stored in an external storage device (e.g., a magnetic disk such as a hard disk, an optical disk such as a CD, a magneto-optical disk such as an MO, a semiconductor memory such as a USB memory) (123) into a computer. The storage device (121c) and the external storage device (123) are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as recording media. In this specification, when the term "recording media" is used, it may include only the storage device (121c), only the external storage device (123), or both. Furthermore, the provision of the program to the computer may be performed using communication means such as the internet or a dedicated line, without using the external storage device (123).

[0066] (2) Substrate processing process

[0067] Using the aforementioned substrate processing apparatus, an example of a process for forming a film on a substrate as one step of a manufacturing process in a method for manufacturing a semiconductor device (device processing method) is explained using FIG. 7. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by a controller (121).

[0068] In this specification, the sequence of the film formation process shown in FIG. 7 may be indicated as follows for convenience. The same notation will be used in the description of the following variations and other embodiments.

[0069] (Fuel gas → Reaction gas)×n

[0070] In this specification, the term "wafer" may refer to the wafer itself or to a laminate of the wafer and a predetermined layer or film formed on its surface. In this specification, the term "surface of the wafer" may refer to the surface of the wafer itself or to the surface of a predetermined layer formed on the wafer. In this specification, when it is stated that a predetermined layer is formed on the wafer, it may refer to directly forming a predetermined layer on the surface of the wafer itself or forming a predetermined layer on a layer formed on the wafer. In this specification, the term "substrate" may have the same meaning as when the term "wafer" is used. The term "agent" used in this specification includes at least one of a gaseous substance and a liquid substance. The liquid substance includes a mist substance. That is, the film-forming agent, the modifying agent, and the etching agent may include a gaseous substance, a liquid substance such as a mist substance, or both.

[0071] (Substrate input process: S1)

[0072] When multiple wafers (200) are loaded (wafer charged) into the boat (217), the shutter (219s) is moved by the shutter opening / closing mechanism (115s), and the lower opening of the manifold (209) is opened (shutter open). After that, as shown in FIG. 1, the boat (217) supporting the multiple wafers (200) is lifted by the boat elevator (115) and brought into the processing room (201) (boat loaded). In this state, the seal cap (219) seals the lower end of the manifold (209) with the O-ring (220b) interposed.

[0073] (Pressure and temperature adjustment process: S2)

[0074] The inside of the processing chamber (201) is vacuumed (vacuumed) by a vacuum pump (246) so that the pressure (vacuum level) inside the processing chamber (201) becomes the desired pressure. At this time, the pressure inside the processing chamber (201) is measured by a pressure sensor (245), and the APC valve (244) is feedback controlled (pressure adjustment) based on this measured pressure information. The vacuum pump (246) remains in an operating state at all times until the film formation process described later is completed.

[0075] Additionally, the processing chamber (201) is heated by a heater (207) to achieve a desired temperature. At this time, the energization state of the heater (207) is feedback-controlled (temperature adjustment) based on temperature information detected by a temperature sensor (263) to achieve a desired temperature distribution within the processing chamber (201). Heating within the processing chamber (201) by the heater (207) is performed continuously at least until the film deposition process described later is completed. However, if the film deposition process is performed under temperature conditions below room temperature, heating within the processing chamber (201) by the heater (207) is not required. Furthermore, if only processing is performed under such temperatures, the heater (207) becomes unnecessary, and the heater (207) does not need to be installed in the substrate processing device. In this case, the configuration of the substrate processing device can be simplified.

[0076] Next, the rotation of the boat (217) and the wafer (200) by the rotation mechanism (267) is initiated. The rotation of the boat (217) and the wafer (200) by the rotation mechanism (267) is continued until at least the film deposition process described later is completed.

[0077] (Tabernacle Process: S3, S4, S5, S6)

[0078] After that, the membrane formation process is performed by sequentially executing processes S3, S4, S5, and S6.

[0079] (Raw gas supply process: S3, S4)

[0080] In process S3, raw gas is supplied to the wafer (200) in the processing room (201).

[0081] The valve (243a) is opened, and raw gas is flowed into the gas supply pipe (232a). The flow rate of the raw gas is controlled by the MFC (241a), supplied from the gas supply port (250a) into the processing chamber (201) through the nozzle (249a), and exhausted from the exhaust pipe (231). At this time, the raw gas is supplied to the wafer (200). At this time, the valve (243c) may be opened simultaneously to flow inert gas into the gas supply pipe (232c). The flow rate of the inert gas is controlled by the MFC (241c), supplied into the processing chamber (201) together with the raw gas, and exhausted from the exhaust pipe (231).

[0082] Additionally, to prevent raw material gas from entering the nozzle (249b), the valve (243d) may be opened to allow inert gas to flow into the gas supply pipe (232d). The inert gas is supplied into the processing chamber (201) through the gas supply pipe (232d) and the nozzle (249b), and is exhausted from the exhaust pipe (231).

[0083] As a processing condition in this process,

[0084] Processing temperature: Room temperature (25℃) to 550℃, preferably 400 to 500℃

[0085] Processing pressure: 1 Pa to 4000 Pa, preferably 100 Pa to 1000 Pa

[0086] Raw gas supply flow rate: 0.1 slm to 3 slm

[0087] Raw gas supply time: 1 second to 100 seconds, preferably 1 second to 50 seconds

[0088] Inert gas supply flow rate (per gas supply pipe): 0 slm to 10 slm

[0089] This is an example.

[0090] In addition, in this specification, a numerical range notation such as “25°C to 550°C” implies that the lower and upper limits are included within that range. Thus, for example, “25°C to 550°C” means “25°C or higher and 550°C or lower.” The same applies to other numerical ranges. Furthermore, in this specification, the processing temperature refers to the temperature of the wafer (200) or the temperature inside the processing room (201), and the processing pressure refers to the pressure inside the processing room (201). Also, a gas supply flow rate of 0 slm means a case where no gas is supplied. These also apply to the following description.

[0091] A first layer is formed on the wafer (200) (the lower film on the surface) by supplying a source gas to the wafer (200) under the aforementioned conditions. For example, when a silicon (Si) containing gas described later is used as the source gas, a Si containing layer is formed as the first layer.

[0092] After the first layer is formed, the valve (243a) is closed to stop the supply of raw material gas into the processing chamber (201). At this time, the APC valve (244) is left open, and the inside of the processing chamber (201) is vacuum-exhausted by the vacuum pump (246) to remove any unreacted material gas or reaction by-products remaining in the processing chamber (201) or those that contributed to the formation of the first layer (S4). Additionally, the valves (243c, 243d) are opened to supply inert gas into the processing chamber (201). The inert gas acts as a purge gas.

[0093] As a raw gas, aminosilane-based gases such as tetrakis(dimethylamino)silane {Si[N(CH3)2]4, abbreviated: 4DMAS} gas, tris(dimethylamino)silane {Si[N(CH3)2]3H, abbreviated: 3DMAS} gas, bis(dimethylamino)silane (Si[N(CH3))2]2H2, abbreviated: BDMAS) gas, bis(diethylamino)silane {Si[N(C2H5)2]2H2, abbreviated: BDEAS} gas, bis(tertiarybutylamino)silane {SiH2[NH(C4H9)]2, abbreviated: BTBAS} gas, and (diisopropylamino)silane {SiH3[N(C3H7)2], abbreviated: DIPAS} gas may be used. One or more of these may be used as raw gases.

[0094] In addition, as a source gas, chlorosilane-based gases such as monochlorosilane (SiH3Cl, abbreviated: MCS), dichlorosilane (SiH2Cl2, abbreviated: DCS), trichlorosilane (SiHCl3, abbreviated: TCS), tetrachlorosilane (SiCl4, abbreviated: STC), hexachlorodisilane (Si2Cl6, abbreviated: HCDS), and octachlorotrisilane (Si3Cl8, abbreviated: OCTS) gas, fluorosilane-based gases such as tetrafluorosilane (SiF4) and difluorosilane (SiH2F2) gas, bromosilane-based gases such as tetrabromosilane (SiBr4) and dibromosilane (SiH2Br2) gas, or iodosilane-based gases such as tetraiodosilane (SiI4) and diiodosilane (SiH2I2) gas may also be used. There is. That is, halosilane-based gases can be used as raw gas. One or more of these can be used as raw gas.

[0095] As a source gas, silicon hydride gases such as monosilane (SiH4, abbreviated: MS) gas, disilane (Si2H6, abbreviated: DS) gas, and trisilane (Si3H8, abbreviated: TS) gas may be used. One or more of these may be used as source gases.

[0096] As inert gases, for example, noble gases such as nitrogen (N2), argon (Ar), helium (He), neon (Ne), and xenon (Xe) can be used. This applies to each process described later as well.

[0097] (Reaction gas supply process: S5, S6)

[0098] After process S4 is completed, plasma-excited O2 gas as a reaction gas is supplied to the wafer (200) in the processing room (201) (S5).

[0099] In this process, the opening and closing control of the valves (243b to 243d) is performed in the same order as the opening and closing control of the valves (243a, 243c, 243d) in process S3. The reaction gas is flow-regulated by the MFC (241b) and supplied into the processing chamber (201) from the gas supply port (250b) through the nozzle (249b). At this time, high-frequency power (RF power, frequency 27.12 MHz in this embodiment) is supplied (applied) to the electrode (300) from the high-frequency power source (320). The reaction gas supplied into the processing chamber (201) is excited into a plasma state inside the processing chamber (201), supplied to the wafer (200) as an active species, and exhausted from the exhaust pipe (231).

[0100] As a processing condition in this process,

[0101] Treatment temperature: Room temperature (25℃), to 550℃, preferably 400℃ to 500℃

[0102] Processing pressure: 1 Pa to 300 Pa, preferably 10 Pa to 100 Pa

[0103] Reaction gas supply flow rate: 0.1 slm to 10 slm

[0104] Reaction gas supply time: 1 second to 100 seconds, preferably 1 second to 50 seconds

[0105] Inert gas supply flow rate (per gas supply pipe): 0 slm to 10 slm

[0106] RF Power: 50W to 1000W

[0107] RF Frequency: 25-35MHz

[0108] is exemplified.

[0109] Under the aforementioned conditions, by supplying a reaction gas to the wafer (200) in a plasma state, a modification treatment is performed on the first layer formed on the surface of the wafer (200) through the action of ions generated in the plasma and electrically neutral active species, thereby modifying the first layer into a second layer.

[0110] When using an oxidizing gas (oxidizing agent), such as an oxygen (O) containing gas, as a reaction gas, an O containing active species is generated by exciting the O containing gas into a plasma state, and this O containing active species is supplied to the wafer (200). In this case, an oxidation treatment is performed as a modification treatment on the first layer formed on the surface of the wafer (200) by the action of the O containing active species. In this case, if the first layer is, for example, a Si containing layer, the Si containing layer as the first layer is modified into a silicon oxide layer (SiO layer) as the second layer.

[0111] In addition, when a nitriding gas (nitriding agent), such as a nitrogen (N) and hydrogen (H) containing gas, is used as a reaction gas, N and H containing active species are generated by exciting the N and H containing gas into a plasma state, and N and H containing active species are supplied to the wafer (200). In this case, nitriding treatment is performed as a modification treatment on the first layer formed on the surface of the wafer (200) by the action of the N and H containing active species. In this case, if the first layer is, for example, a Si containing layer, the Si containing layer as the first layer is modified into a silicon nitriding layer (SiN layer) as the second layer.

[0112] After modifying the first layer into the second layer, the valve (243b) is closed to stop the supply of reaction gas. Also, the supply of RF power to the electrode (300) is stopped. Reaction gas and reaction by-products remaining in the processing chamber (201) are removed from the processing chamber (201) according to the same processing sequence and processing conditions as in process S4 (S6).

[0113] As a reaction gas, as described above, for example, an O-containing gas or an N and H-containing gas may be used. As an O-containing gas, for example, oxygen (O2) gas, nitrous oxide (N2O) gas, nitric oxide (NO) gas, nitrogen dioxide (NO2) gas, ozone (O3) gas, hydrogen peroxide (H2O2) gas, water vapor (H2O), ammonium hydroxide (NH4(OH)) gas, carbon monoxide (CO) gas, carbon dioxide (CO2) gas, etc. may be used. As a N and H-containing gas, hydrogen nitride-based gases such as ammonia (NH3) gas, diazene (N2H2) gas, hydrazine (N2H4) gas, and N3H8 gas may be used. As a reaction gas, one or more of these may be used.

[0114] As an inert gas, various gases exemplified in process S4 can be used.

[0115] (Perform a predetermined number of times: S7)

[0116] Performing the aforementioned processes S3, S4, S5, and S6 in this order non-synchronously, that is, without synchronously, constitutes one cycle, and by performing this cycle a predetermined number of times (n times, where n is an integer greater than or equal to 1), that is, one or more times, a film of a predetermined composition and a predetermined film thickness can be formed on a wafer (200). It is preferable to repeat the cycle multiple times. That is, it is preferable to repeat the cycle multiple times until the thickness of the first layer formed per cycle is smaller than the desired film thickness, and the film thickness of the film formed by stacking the second layer becomes the desired film thickness. When, for example, a Si-containing layer is formed as the first layer and, for example, a SiO layer is formed as the second layer, a silicon oxide film (SiO film) is formed as the film. Also, when, for example, a Si-containing layer is formed as the first layer and, for example, a SiN layer is formed as the second layer, a silicon nitride film (SiN film) is formed as the film.

[0117] (Atmospheric pressure return process: S8)

[0118] When the aforementioned membrane treatment is completed, inert gas is supplied into the treatment chamber (201) from each of the gas supply pipes (232c, 232d) and exhausted from the exhaust pipe (231). Accordingly, the treatment chamber (201) is purged with inert gas, and any remaining reaction gas, etc., within the treatment chamber (201) is removed from the treatment chamber (201) (inert gas purging). After that, the atmosphere within the treatment chamber (201) is replaced with inert gas (inert gas replacement), and the pressure within the treatment chamber (201) is returned to normal pressure (atmospheric pressure return: S8).

[0119] (Outbound Process: S9)

[0120] After that, the seal cap (219) is lowered by the boat elevator (115) so that the bottom of the manifold (209) is opened, and the processed wafer (200) is discharged from the bottom of the manifold (209) to the outside of the reaction tube (203) while supported by the boat (217) (boat unload). After boat unload, the shutter (219s) is moved so that the bottom opening of the manifold (209) is sealed by the shutter (219s) through the O-ring (220c) (shutter close). After the processed wafer (200) is discharged to the outside of the reaction tube (203), it is removed from the boat (217) (wafer discharge). Additionally, after wafer discharge, the empty boat (217) may be brought into the processing room (201).

[0121] Here, it is desirable that the furnace pressure during substrate processing be controlled within a range of 10 Pa or more and 300 Pa or less. This is because if the furnace pressure is lower than 10 Pa, the mean free path of gas molecules becomes longer than the devi length of the plasma, and the plasma striking the furnace wall directly becomes prominent, making it difficult to suppress particle generation. Furthermore, if the furnace pressure is higher than 300 Pa, the amount of plasma generated becomes saturated, leading to wasteful consumption of reaction gas and, at the same time, a shortened mean free path of gas molecules, which reduces the transport efficiency of plasma active species to the wafer.

[0122] (3) Effects according to this embodiment

[0123] By adjusting the amount of tightening of the connection screw (347) of the movable connection part (334) and adjusting the amount of inductance of the variable inductor (336) by the inductance variable mechanism part (340), it is possible to appropriately adjust the impedance matching position, particularly the matching frequency. Therefore, when using multiple high-frequency power sources (320), in order to avoid interference between them and impedance matching becoming uneven in each matching device (325), it becomes possible to intentionally misalign the impedance matching positions, particularly the impedance matching frequency, through the aforementioned adjustment. Furthermore, among multiple semiconductor manufacturing devices, it becomes possible to match the impedance matching positions, particularly the impedance matching frequency. Accordingly, it becomes possible to manufacture semiconductor devices through stable substrate processing using a substrate processing device capable of generating stable plasma. By doing so, it is possible to achieve an improvement in the yield of semiconductor devices and an improvement in the quality of semiconductor devices.

[0124] (Second embodiment)

[0125] Hereinafter, a second embodiment of the present disclosure will be described mainly with reference to FIG. 8.

[0126] FIG. 8 illustrates a cross-sectional view of a processing furnace (202) of a substrate processing device according to a second embodiment. In the processing furnace (202), a plurality of high-frequency power supplies (320) and a matching device (325) are installed, similar to the first embodiment. The matching device (325) shown in FIG. 8 may be the matching device (325) shown in FIG. 3, FIG. 4, and FIG. 5. A plasma generating device installed in the substrate processing device of FIG. 8 will be described.

[0127] (Plasma generation device)

[0128] In the buffer chamber (537b), as shown in FIG. 8, three rod-shaped electrodes (569, 570, 571) made of a conductor and having an elongated structure are arranged along the arrangement direction of the wafer (200) from the bottom to the top of the reaction tube (503). Each of the rod-shaped electrodes (569, 570, 571) is installed parallel to the nozzle (549b). Each of the rod-shaped electrodes (569, 570, 571) is covered and protected by an electrode protection tube (575) from the top to the bottom. Among the rod-shaped electrodes (569, 570, 571), the rod-shaped electrodes (569, 571) placed at both ends are connected to a high-frequency power supply (320) through a matching device (325). The rod-shaped electrode (570) is connected to ground, which is a reference potential, and is grounded. That is, rod-shaped electrodes connected to a high-frequency power source (320) and rod-shaped electrodes connected to a ground are alternately arranged, and a rod-shaped electrode (570) placed between rod-shaped electrodes (569, 571) connected to a high-frequency power source (320) is used in common with the rod-shaped electrodes (569, 571) as a ground rod-shaped electrode. In other words, the ground rod-shaped electrode (570) is arranged to be fitted into the rod-shaped electrodes (569, 571) connected to the adjacent high-frequency power source (320), and the rod-shaped electrode (569) and the rod-shaped electrode (570), and similarly the rod-shaped electrode (571) and the rod-shaped electrode (570) are configured to form pairs to generate plasma. That is, the ground rod-shaped electrode (570) is used in common with the two rod-shaped electrodes (569, 571) connected to the high-frequency power source (320) adjacent to the rod-shaped electrode (570). By applying high-frequency (RF) power from a high-frequency power source (320) to rod-shaped electrodes (569, 571), plasma is generated in the plasma generation region (524a) between the rod-shaped electrodes (569, 570) and the plasma generation region (524b) between the rod-shaped electrodes (570, 571).

[0129] Likewise, within the buffer chamber (537c), as illustrated in FIG. 8, three rod-shaped electrodes (569, 570, 571) made of a conductor and having a slender, elongated structure are arranged along the arrangement direction of the wafer (200) from the bottom to the top of the reaction tube (503). These three rod-shaped electrodes (569, 570, 571) have the same configuration as the three rod-shaped electrodes (569, 570, 571) described above.

[0130] Then, a first plasma generator is configured to generate plasma in plasma generation regions (524a, 524b) by means of rod-shaped electrodes (569, 570, 571) within a buffer chamber (537b). Likewise, a second plasma generator is configured to generate plasma in plasma generation regions (524a, 524b) by means of rod-shaped electrodes (569, 570, 571) within a buffer chamber (537c). Additionally, an electrode protection tube (575) may be considered to be included in the plasma generator. Furthermore, a plasma generation device is configured by means of a high-frequency power supply (320), a matching device (325), and the aforementioned first and second plasma generators.

[0131] The plasma generation device functions as a plasma excitation unit (activation mechanism) that excites a gas to a plasma state, that is, to activate it. Furthermore, the plasma generation device includes a plurality of plasma generation units as described above, and is used to perform film deposition treatment by utilizing the plasma generated by these plurality of plasma generation units to perform substrate treatment.

[0132] And, the high-frequency power supply (320) supplies power to each of the multiple plasma generation units. In addition, a matching unit (325) is installed between the two high-frequency power supplies (320) and the two plasma generation units, and is installed to match the load impedance of the plasma generation units with the output impedance of the high-frequency power supply (320).

[0133] Additionally, the buffer structure (500, 500) is installed symmetrically with respect to the line passing through the center of the exhaust pipe (231) and the reaction pipe (503) with the exhaust pipe (231) in between. Also, the nozzle (549a) is installed in a position opposite the exhaust pipe (231) with the wafer (200) in between. Additionally, the nozzle (549b) and the nozzle (549c) are each installed at a position far from the exhaust pipe (231) within the buffer chamber (537b, 537c).

[0134] As shown in FIG. 8, the nozzle (549a) is installed so as to rise upward in the loading direction of the wafer (200) along the upper side from the lower side of the inner wall of the reaction tube (503) in the space between the inner wall of the reaction tube (503) and the wafer (200). That is, the nozzle (549a) is installed to follow the wafer arrangement area in the area that horizontally surrounds the wafer arrangement area (placement area) on the side of the wafer arrangement area (placement area) where the wafer (200) is arranged (placed). That is, the nozzle (549a) is installed on the side of the end (periphery) of each wafer (200) brought into the processing room (201) in a direction perpendicular to the surface (flat surface) of the wafer (200). A gas supply port (550a) for supplying gas is installed on the side of the nozzle (549a). The gas supply port (550a) is opened toward the center of the reaction tube (503), making it possible to supply gas toward the wafer (200). Multiple gas supply ports (550a) are installed from the bottom to the top of the reaction tube (503), each having the same opening area and installed with the same opening pitch.

[0135] In the processing furnace (202), nozzles (549b, 549c) are each installed within buffer chambers (537b, 537c), which are gas dispersion spaces. As shown in FIG. 8, the buffer chambers (537b, 537c) are each installed in a circular space in a planar view between the inner wall of the reaction tube (503) and the wafer (200), and also along the loading direction of the wafer (200) in the portion extending from the bottom to the top of the inner wall of the reaction tube (503). The buffer chambers (537b, 537c) are formed by a buffer structure (500, 500) along the wafer array area in a region that horizontally surrounds the wafer array area on the side of the wafer array area. The buffer structure (500, 500) is composed of an insulating material such as quartz, and a gas supply port (502, 504) for supplying gas is formed on the wall surface formed in an arc shape of the buffer structure (500).

[0136] As shown in FIG. 8, the gas supply ports (502, 504) are each opened toward the center of the reaction tube (503) at a position facing the plasma generation region (524a, 524b) between the rod-shaped electrodes (569, 570) and between the rod-shaped electrodes (570, 571), making it possible to supply gas toward the wafer (200). The gas supply ports (502, 504) are installed in multiple numbers from the bottom to the top of the reaction tube (503), each having the same opening area and installed with the same opening pitch.

[0137] The nozzles (549b, 549c) are each installed to rise along the upper side from the lower part of the inner wall of the reaction tube (503) toward the loading direction of the wafer (200). The nozzles (549b, 549c) are each installed to follow the wafer array area in the area that is inside the buffer structure (500) and horizontally surrounds the wafer array area on the side of the wafer array area where the wafer (200) is arranged.

[0138] A gas supply port (550b) for supplying gas is installed on the side of the nozzle (549b). The gas supply port (550b) is opened so as to face the wall formed radially with respect to the wall formed in the arc shape of the buffer structure (500) (i.e., in a direction different from the opening direction of the gas supply port (502, 504)), thereby enabling the supply of gas toward the wall. As a result, the reaction gas is dispersed within the buffer chamber (537b), so that it is not directly sprayed onto the rod-shaped electrodes (569 to 571), thereby suppressing the generation of particles. The gas supply port (550b) is installed in multiple numbers from the bottom to the top of the reaction tube (503), just like the gas supply port (550a). The nozzle (549c) also has the same structure as the nozzle (549b).

[0139] It is possible to configure the gas supply pipe (532a) to supply a silane raw material gas containing a specific element, for example, silicon (Si) as the specific element, into the processing chamber (201) through the nozzle (549a). It is possible to configure the gas supply pipe (532b) to supply a nitrogen (N) containing gas as a reaction gas, for example, as a reactant containing an element different from the aforementioned specific element, into the processing chamber (201) through the nozzle (549b). It is possible to configure the gas supply pipe (532c) to supply a hydrogen (H2) gas as a reforming gas, for example, as the nozzle (549c) into the processing chamber (201).

[0140] According to the second embodiment, the same effect as the first embodiment can be obtained.

[0141] The embodiments of the present disclosure have been described in detail above. However, the present disclosure is not limited to the aforementioned embodiments, and various modifications are possible within the scope of not departing from the gist thereof. The aforementioned embodiments or variations may be used in appropriate combination. In this case, the processing order and processing conditions may be the same as, for example, the processing order and processing conditions of the aforementioned embodiments or variations.

[0142] In addition, for example, in the aforementioned embodiments, an example was described in which the reactant is supplied after the raw material. The present disclosure is not limited to this form, and the order of supplying the raw material and the reactant may be reversed. That is, the raw material may be supplied after the reactant. By changing the supply order, it becomes possible to change the film quality or composition ratio of the formed film.

[0143] The present disclosure is preferably applicable not only when forming a SiO film or a SiN film on a wafer (200), but also when forming a Si-based oxide film such as a silicon oxycarbonate film (SiOC film), a silicon oxynitride film (SiOCN film), or a silicon oxynitride film (SiON film) on a wafer (200).

[0144] It is preferable that recipes used for film formation processes be prepared individually according to the processing content and stored in a storage device (121c) via an electrical communication line or an external storage device (123). When starting various processes, it is preferable that the CPU (121a) appropriately selects a suitable recipe from among the multiple recipes stored in the storage device (121c) according to the processing content. By doing so, it becomes possible to universally and reproducibly form thin films of various film types, composition ratios, film quality, and film thicknesses in a single substrate processing device. Furthermore, it is possible to reduce the burden on the operator and avoid operational errors while quickly starting various processes.

[0145] The aforementioned recipe is not limited to being newly created; for example, it may be prepared by modifying an existing recipe that has already been installed in a substrate processing device. When modifying the recipe, the modified recipe may be installed in the substrate processing device via an electrical communication line or a recording medium on which the recipe is recorded. Alternatively, the existing recipe that has already been installed in the substrate processing device may be modified directly by operating an input / output device (122) provided in the existing substrate processing device.

[0146] In the aforementioned embodiment, an example of forming a film using a batch-type substrate processing apparatus that processes multiple substrates at once was described. The present disclosure is not limited to the aforementioned embodiment, and can preferably be applied to cases where a film is formed using a single-wafer type substrate processing apparatus that processes, for example, one or several substrates at once. In addition, in the aforementioned embodiment, an example of forming a film using a substrate processing apparatus including a hot-wall type processing furnace was described. The present disclosure is not limited to the aforementioned embodiment, and can preferably be applied to cases where a film is formed using a substrate processing apparatus including a cold-wall type processing furnace. Even when using these substrate processing apparatuses, each process can be performed with the same processing sequence and processing conditions as in the aforementioned embodiment or modified example, and the same effects as in the aforementioned embodiment or modified example can be obtained. Explanation of the symbols

[0147] 325: Matching unit 335: Second matching part 336: Variable inductor 340: Variable inductance mechanism

Claims

Claim 1 A matching device comprising: an input unit for inputting a high frequency; an output unit for outputting the high frequency; a matching unit having a variable inductor capable of varying the amount of inductance; and an inductance variable mechanism unit for varying the inductance of the variable inductor, wherein the variable inductor is composed of a coil and the inductance is varied by varying the pitch of the coil, and the inductance variable mechanism unit comprises a fixed unit for fixing the coil and a movable unit for varying the pitch of the coil, wherein the movable unit is configured to move by a rotating mechanism, and the rotating mechanism comprises a rotating shaft for moving the movable unit; a first gear for rotating the rotating shaft; and a second gear for rotating the first gear. Claim 2 In paragraph 1, the above-mentioned movable part is a plate-shaped matching device. Claim 3 A matching device according to claim 1, wherein the rotating shaft has a screw shape and the movable part has a screw hole shape. Claim 4 In claim 1, the matching part is a matching device including a capacitor or a variable capacitor. Claim 5 In paragraph 1, the variable inductor is a matching device connected to a movable connection part. Claim 6 In paragraph 5, the variable inductor is a matching device connected to the input portion via the movable connection portion. Claim 7 In paragraph 6, the above-mentioned movable connection part is a matching device connected to a load matching part. Claim 8 In paragraph 5, the movable connection part comprises a movable member connected to the variable inductor and a fixed member for fixing the movable member. Claim 9 In claim 8, the movable connection part is a matching device having a screw that fixes the movable member. Claim 10 In claim 8, the variable inductor is connected to the movable member, and the movable member is fixed to the fixed member and electrically connected to the matching device. Claim 11 In claim 1, the output unit is a matching device connected to an electrode installed in a plasma generating unit that generates plasma and is installed in a processing room that processes a substrate. Claim 12 In claim 11, a matching device installed between the high-frequency power supply outputting the high frequency and the plasma generating unit. Claim 13 In Clause 12, the high-frequency power source and the plasma generating unit are installed in multiple quantities, and a matching device is installed between each of the multiple high-frequency power sources and the multiple plasma generating units. Claim 14 A substrate processing apparatus comprising: a processing chamber for processing a substrate; an electrode for generating plasma; a high-frequency power source for supplying high frequency to the electrode; and a matching unit installed between the electrode and the high-frequency power source, comprising an input unit for inputting high frequency, an output unit for outputting high frequency, a matching unit having a variable inductor capable of varying the amount of inductance, and an inductance variable mechanism unit for varying the inductance of the variable inductor, wherein the variable inductor is composed of a coil and the inductance is varied by varying the pitch of the coil, and the inductance variable mechanism unit comprises a fixed part for fixing the coil and a movable part for varying the pitch of the coil, wherein the movable part is configured to move by a rotating mechanism, and the rotating mechanism comprises a rotating shaft for moving the movable part; a first gear for rotating the rotating shaft; and a second gear for rotating the first gear. Claim 15 A method for manufacturing a semiconductor device comprising: a processing chamber for processing a substrate; an electrode for generating plasma; a high-frequency power source for supplying high frequency to the electrode; and a matching unit installed between the electrode and the high-frequency power source, comprising an input unit for inputting high frequency, an output unit for outputting high frequency, a matching unit having a variable inductor capable of varying the amount of inductance, and an inductance variable mechanism unit for varying the inductance of the variable inductor, wherein the variable inductor is composed of a coil and the inductance is varied by varying the pitch of the coil, and the inductance variable mechanism unit comprises a fixed part for fixing the coil and a movable part for varying the pitch of the coil, wherein the movable part is configured to move by a rotating mechanism, and the rotating mechanism comprises a rotating shaft for moving the movable part; a first gear for rotating the rotating shaft; and a second gear for rotating the first gear, wherein the method comprises introducing the substrate into the processing chamber of the substrate processing device; and a process for processing the substrate. Claim 16 A step of introducing the substrate into the processing chamber of a substrate processing device, wherein the processing chamber for processing the substrate; an electrode for generating plasma; a high-frequency power source for supplying high frequency to the electrode; and a matching unit installed between the electrode and the high-frequency power source, comprising an input unit for inputting high frequency, an output unit for outputting high frequency, a matching unit having a variable inductor capable of varying the amount of inductance, and an inductance variable mechanism unit for varying the inductance of the variable inductor, wherein the variable inductor is composed of a coil and the inductance is varied by varying the pitch of the coil, and the inductance variable mechanism unit comprises a fixed part for fixing the coil and a movable part for varying the pitch of the coil, wherein the movable part is configured to move by a rotating mechanism, and the rotating mechanism comprises a rotating shaft for moving the movable part; a first gear for rotating the rotating shaft; and a second gear for rotating the first gear; and a program recorded on a computer-readable recording medium for executing the step of processing the substrate by a computer. Claim 17 A process for processing a substrate; an electrode for generating plasma; a high-frequency power source for supplying high frequency to the electrode; and a matching device installed between the electrode and the high-frequency power source, comprising an input unit for inputting high frequency, an output unit for outputting high frequency, a matching unit having a variable inductor capable of varying the amount of inductance, and an inductance variable mechanism unit for varying the inductance of the variable inductor, wherein the variable inductor is composed of a coil and the inductance is varied by varying the pitch of the coil, and the inductance variable mechanism unit comprises a fixed unit for fixing the coil and a movable unit for varying the pitch of the coil, wherein the movable unit is configured to move by a rotating mechanism, and the rotating mechanism comprises a rotating shaft for moving the movable unit; a first gear for rotating the rotating shaft; and a second gear for rotating the first gear, wherein the process of introducing the substrate into the processing chamber of the substrate processing device; and a process of processing the substrate. Claim 18 delete Claim 19 delete Claim 20 delete

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