Sawing method of the semiconductor materials sawing apparatus

Abstract

The present invention relates to a cutting method for a semiconductor material cutting device that manufactures unit units by cutting a semiconductor material, comprising a material section in which a plurality of unit units are arranged in a matrix and a scrap section located around the material section, along a plurality of cutting lines. The method involves taking into account the positional misalignment caused by warpage of the semiconductor material, holding the warpage of the semiconductor material, and then re-acquiring position information for the corrected actual cutting line of the semiconductor material as the warpage is removed, and performing cutting based on the acquired position information to ensure high cutting precision.

Description

Technology Field

[0001] The present invention relates to a cutting method of a semiconductor material cutting device for manufacturing individual semiconductor packages by cutting a semiconductor material, comprising a material section in which a plurality of unit units are arranged in a matrix and a scrap section located around the material section, along a plurality of cutting lines. Background Technology

[0002] A semiconductor material cutting device is equipment that cuts packaged semiconductor materials into individual unit pieces.

[0003] In addition to the function of simply cutting semiconductor materials, this semiconductor material cutting device provides the function of processing a series of processes that involve cutting, cleaning, and drying the semiconductor materials, and then inspecting the top and bottom surfaces of the cut semiconductor packages to classify semiconductor packages with manufacturing defects.

[0004] A patent for such a semiconductor material cutting device is disclosed in Korean Published Patent No. 10-2017-0026751 (hereinafter referred to as 'Patent Document 1').

[0005] The semiconductor material cutting and alignment device of Patent Document 1 comprises: an on-loader unit in which a semiconductor material is provided in a state where it is fed into a magazine; an inlet rail on which the extracted semiconductor material is placed; a strip picker that vacuum-adsorbs the semiconductor material placed on the inlet rail and transfers it to a chuck table; a blade that supplies the semiconductor material supplied by the strip picker and cuts it into a plurality of semiconductor packages on the chuck table; a unit picker that vacuum-adsorbs the plurality of semiconductor packages and transfers them to a drying unit via a washing unit; a washing unit that washes the semiconductor packages adsorbed by the unit picker; a drying unit that dries the semiconductor packages transferred by the unit picker; a vision unit that inspects the semiconductor packages; and a sorting device that classifies and stores the semiconductor packages according to the inspection results of the semiconductor packages.

[0006] A semiconductor material supplied to a conventional semiconductor material cutting device such as Patent Document 1 may be configured to include a material section in which a plurality of unit units (semiconductor packages on which semiconductor chips are mounted) are arranged in a matrix, and a scrap section located around the perimeter of the material section as a border of the material section, which is cut and removed from the material section by a blade.

[0007] After the semiconductor material is transferred onto the chuck table, the cutting line of the semiconductor material is inspected through the camera of the cutting section, and then a cutting process is performed in which the blade cuts along the cutting line of the semiconductor material on the chuck table.

[0008] Meanwhile, semiconductor materials supplied to a semiconductor material cutting device are manufactured by molding semiconductor chips with a molding material. During the molding manufacturing process, warpage may form on the semiconductor material due to bending of the molding material while the molding material is cooling.

[0009] In particular, with the recent development trend of small multi-application devices with various functions, such as mobile communication terminals, portable internet devices, and portable multimedia terminals, there is a demand to manufacture semiconductor materials even thinner to achieve miniaturization, and consequently, the frequency of warpage occurrences is increasing.

[0010] Generally, in the case of semiconductor materials with severe warpage, one can consider a method of adsorbing the semiconductor material with a large vacuum pressure to secure it. However, if the thickness of the semiconductor material is reduced to achieve miniaturization, the semiconductor material may break if a large vacuum pressure is used, so the semiconductor material cannot be adsorbed with a large vacuum pressure, and a problem may arise where the cutting position is misaligned during the process of cutting the semiconductor material with severe warpage.

[0011] In other words, there is a problem where the alignment position of the semiconductor material initially inspected for cutting differs from the position of the cut semiconductor material as the warpage unfolds when the semiconductor material is cut during the cutting process.

[0012] Furthermore, even in the case of semiconductor materials without warpage, cutting the semiconductor material causes positional misalignment as the attractive forces between internal particles of the molding material are released; consequently, the alignment position of the semiconductor material during the initial inspection differs from its position during the cutting process.

[0013] As such, even if the position of the semiconductor material shifts during cutting, all cutting lines are performed based on the alignment position of the initially inspected semiconductor material; consequently, the actual cutting line of the semiconductor material differs from the cutting line of the initially inspected material, leading to a problem of reduced cutting precision. Prior art literature

[0014] Korean Patent Publication No. 10-2017-0026751 The problem to be solved

[0015] The present invention aims to provide a cutting method for a semiconductor material cutting device that ensures high cutting precision by aligning the position of the semiconductor material in consideration of the positional misalignment caused by warpage of the semiconductor material. means of solving the problem

[0016] A cutting method for a semiconductor material cutting device according to one feature of the present invention comprises: a first alignment step of obtaining position information for all cutting lines of the semiconductor material by capturing a recognition mark provided at a preset position of the semiconductor material based on the relative movement of a chuck table that adsorbs the semiconductor material to be cut and a camera that inspects the semiconductor material adsorbed on the chuck table; a first cutting step of performing cutting along one or more preset cutting lines among the semiconductor material based on the position information obtained in the first alignment step; and a second alignment step of obtaining position information for a cutting line to be cut among the remaining cutting lines of the semiconductor material that were not cut in the first cutting step by capturing a recognition mark provided at a preset position of the semiconductor material based on the relative movement of the chuck table and the camera after the first cutting step is completed. and is characterized by including a second cutting step of performing cutting along the cutting line of the semiconductor material based on the position information obtained in the second alignment step.

[0017] In addition, the second cutting step of the cutting line that was not cut in the first cutting step is performed multiple times, wherein, before performing each second cutting step, a second alignment step is performed each time to obtain position information of the cutting line to be cut in each second cutting step, and each second cutting step is performed based on the position information obtained in each second alignment step.

[0018] In addition, the first cutting step is characterized by performing cutting along one or more predetermined cutting lines of a material part among a plurality of cutting lines of the semiconductor material.

[0019] In addition, the first cutting step is characterized by removing the scrap portion of the semiconductor material by cutting the outermost cutting line among one or more cutting lines of material portions in which a plurality of unit units are arranged in a matrix.

[0020] In addition, the first cutting step is characterized by cutting the outermost cutting line among one or more cutting lines of a material part in which a plurality of unit units are arranged in a matrix to remove the scrap portion of the semiconductor material, and performing cutting along one or more pre-set cutting lines of a material part among the plurality of cutting lines of the semiconductor material.

[0021] In addition, when performing the second cutting step for a semiconductor material having two or more material parts, the cutting line of the material part is cut using the average value of the position values ​​of the cutting lines of each material part that are cut together, based on the position information of each material part obtained in the second alignment step.

[0022] In addition, when performing cutting along the cutting line of the semiconductor material in the first cutting step or the second cutting step, the cutting speed or blade height is set for each cutting line to perform the cutting.

[0023] In addition, when the cutting lines of the material section are cut sequentially in the row or column direction during the second cutting step, the cutting line located in the last row or column of the material section is characterized by having a reduced cutting speed. Effects of the invention

[0024] The cutting method of the semiconductor material cutting device according to the present invention has the effect of ensuring the cutting precision of a semiconductor package by first cutting a portion of the cutting lines of the semiconductor material to mitigate the warpage, even if warpage is present, and then re-inspecting the cutting lines of the semiconductor material.

[0025] In addition, the cutting method of the semiconductor material cutting device according to the present invention has the effect of ensuring the cutting precision of the semiconductor package by re-inspecting the cutting lines of the semiconductor material, even if the position of the semiconductor material is misaligned due to changes in the internal stress of the semiconductor material by first cutting a portion of the cutting lines of the semiconductor material.

[0026] In addition, the cutting method of the semiconductor material cutting device according to the present invention allows cutting by setting the cutting speed or blade height for each cutting line, thereby increasing the convenience of the cutting operation by expanding the range of selectable targets even when various cutting conditions are given, and has the effect of enabling the processing of semiconductor materials that require precise processing or thin semiconductor materials with a depth and precision within a defined error range.

[0027] In addition, the cutting method of the semiconductor material cutting device according to the present invention has the effect of enabling precise cutting by removing scrap to alleviate warpage when cutting a semiconductor material having two or more material parts, and then re-inspecting the cutting line of the semiconductor material to correct the misaligned cutting line.

[0028] In addition, the cutting method of the semiconductor material cutting device according to the present invention has the effect of ensuring the cutting precision of the material by minimizing the misalignment of the material during the cutting process by lowering the cutting speed of the cutting line located at the last row or column of the material when the cutting lines of the material part are cut sequentially in a row or column direction.

[0029] In addition, by lowering the cutting speed when cutting areas where warpage has formed or when cutting edges or outlines during the cutting process, positional misalignment is minimized, and stable cutting is possible. Brief explanation of the drawing

[0030] FIG. 1 is a plan view of a semiconductor material cutting device of the present invention. FIG. 2 is a perspective view of the chuck table of FIG. 1. FIG. 3 is a perspective view of a state in which a semiconductor material is adsorbed to the chuck table of FIG. 2. FIGS. 4a and 4b are drawings illustrating the positional relationship between a semiconductor material and a chuck table according to the warpage before and after performing a first cutting step, as an embodiment of the semiconductor material cutting method of the present invention. FIG. 5 is a perspective view of the state of FIG. 4b. FIG. 6 is a schematic diagram of the semiconductor material cutting method of the present invention. Specific details for implementing the invention

[0031] The following description merely illustrates the principles of the invention. Therefore, those skilled in the art may invent various devices that embody the principles of the invention and are included within the concept and scope of the invention, even if they are not explicitly described or illustrated in this specification. Furthermore, all conditional terms and embodiments listed in this specification are, in principle, explicitly intended for the purpose of enabling an understanding of the concept of the invention and should be understood as not being limited to the embodiments and conditions specifically listed as such.

[0032] The aforementioned objectives, features, and advantages will become clearer through the following detailed description in conjunction with the attached drawings, and accordingly, a person skilled in the art to which the invention pertains will be able to easily implement the technical concept of the invention.

[0033] The embodiments described herein will be explained with reference to cross-sectional and / or perspective views, which are exemplary illustrations of the present invention. Widths and thicknesses of regions, etc., shown in these drawings are exaggerated for the effective explanation of the technical content. The shapes of the exemplary drawings may be modified due to manufacturing techniques and / or tolerances, etc. Accordingly, the embodiments of the present invention are not limited to the specific shapes shown but include variations in shape produced according to the manufacturing process.

[0034] In the drawings of the present invention, the X-axis represents the direction in which the strip picker moves, and the Y-axis represents an axis perpendicular to the horizontal plane of the X-axis. In this case, the X-axis represents an axis identical to the left-right direction, and the Y-axis represents an axis identical to the front-back direction. The left direction refers to the direction on the X-axis line where the semiconductor material is equipped with an on-loader (left direction in Fig. 1), and the right direction refers to the direction opposite to the left direction where the unit picker is equipped. The forward direction refers to the direction in which the semiconductor material picked up by the strip picker is transferred, and the rear direction refers to the direction in which cutting is performed by the blade in the opposite direction to the forward direction. The θ direction refers to the direction of rotation in a clockwise or counterclockwise direction on the XY plane.

[0035] Hereinafter, the semiconductor material cutting device (10) of the present invention will be described with reference to FIGS. 1 to 5.

[0036] FIG. 1 is a plan view of a semiconductor material cutting device of the present invention, FIG. 2 is a perspective view of the chuck table of FIG. 1, FIG. 3 is a perspective view of a state in which a semiconductor material is placed on the chuck table of FIG. 2, FIG. 4a is a diagram showing the alignment state of the chuck table and the semiconductor material in the state of FIG. 3, FIG. 4b is a diagram showing the state in which, after the blade cuts the cutting area in the state of FIG. 4a, a change in position of the first and second material parts and the chuck table occurs as the warpage of the semiconductor material is relieved, FIG. 5 is a perspective view of the state of FIG. 4b.

[0037] As illustrated in FIGS. 1 to 5, the semiconductor material cutting device (10) of the present invention comprises: an on-loader unit (not shown) provided with a plurality of semiconductor materials (S) each stacked and fed into a magazine; a pair of inlet rails (100) guiding semiconductor materials (S) drawn out from the magazine; a strip picker (200) that adsorbs and picks up semiconductor materials (S) guided by the inlet rails (100); a chuck table (300) to which semiconductor materials (S) adsorbed by the strip picker (200) are delivered, and which has a plurality of adsorption holes (311) for adsorbing semiconductor materials (S) and blade escape grooves (313) provided in a grid shape between the plurality of adsorption holes (311); and a semiconductor material delivered to the chuck table (300) through the strip picker (200) and the chuck table (300) by calculating the error value of each cutting line of the semiconductor materials (S) adsorbed by the chuck table and reflecting the average value of the error values. It may be configured to include a control unit (not shown) for correcting the position of a material (S); and a blade (400) for cutting the semiconductor material (S) along a blade escape groove (313) to cut the semiconductor material (S) delivered on the chuck table (300) into individual unit units (P).

[0038] Multiple semiconductor materials (S) are stacked in the magazine, and the semiconductor materials (S) are provided to the on-loader section in a state where they are fed into the magazine. A gripper (210) provided on one side of a pusher (not shown) or strip picker (200) provided in the on-loader section functions to supply the semiconductor materials (S) to the inlet rail (100).

[0039] A pair of inlet rails (100) guide semiconductor materials (S) drawn from a magazine and are each provided to be transportable in the Y-axis direction, and an adsorption plate (not shown) on which semiconductor materials (S) supplied from the magazine are placed is provided on the inner side of the inlet rail (100).

[0040] A strip picker (200) is installed on a guide rail (250) and is movable along the guide rail (250) in the X-axis direction. A strip vision (230) for inspecting semiconductor materials and a gripper for extracting semiconductor materials (S) from a magazine and placing them on a suction plate are mounted side by side on one side, and the strip picker (200) functions to pick up semiconductor materials (S) placed on the suction plate and transfer them to a chuck table (300). The gripper (210) functions to extract semiconductor materials (S) from a magazine and place them on a suction plate, and can be provided to be movable in the Y-axis direction together with the strip vision (230).

[0041] A semiconductor material (S) delivered through a strip picker (200) is adsorbed and placed on the chuck table (300). A plurality of adsorption holes (311) for adsorbing the semiconductor material are provided on the upper surface, and a plurality of blade escape grooves (313) corresponding to the X-axis cutting line and the Y-axis cutting line of the semiconductor material are formed in a grid shape on the upper surface. The blade escape grooves (313) may be formed larger than the thickness of the blade to protect the chuck table (300) from the blade (400) when cutting the semiconductor material.

[0042] The suction holes (311) have the same number as the number of unit units, and through this, each unit unit cut by the blade (400) is suctioned into each suction hole (311), thereby allowing the unit units to be stably fixed on the chuck table so that each unit unit does not detach or slide during the process of cutting the material.

[0043] The blade escape groove (313) is provided in a grid shape between these plurality of adsorption holes (311). Through this blade escape groove (313), the chuck table (300) can be prevented from being damaged when the blade (400) cuts the semiconductor material (S).

[0044] The suction hole (311) and the blade escape groove (313) may be provided in the jig rubber (310) provided on the upper surface of the chuck table (300). The jig rubber (310) is installed on the upper surface of the chuck table (300) so as to be detachably and attachably connected. The jig rubber (310) may be made of a soft material such as rubber, and thereby, even if the blade (400) unintentionally cuts the jig rubber (310), damage to the blade (400) can be minimized.

[0045] The chuck table (300) of the present invention is installed to be movable in the Y-axis direction and rotatable in the θ direction.

[0046] As the chuck table (300) is installed to be movable along the Y-axis and rotatable in the θ direction, the semiconductor material (S) can be moved to the cutting position of the blade (400) and cut.

[0047] The semiconductor material adsorbed on the upper part of the chuck table is cut by the relative movement of the chuck table (300) and the blade (400), and the semiconductor material adsorbed on the chuck table can be cut sequentially as the chuck table moves in the Y-axis direction and the blade moves in the X-axis direction.

[0048] The semiconductor material delivered to the chuck table can inspect the cutting line for dividing the semiconductor material into semiconductor packages through a camera (not shown) provided on the cutting section side, and based on the inspection result of the camera, the blade of the cutting section performs cutting along the cutting line of the semiconductor material.

[0049] A camera is provided to inspect the alignment status of a semiconductor material adsorbed to a chuck table. It can inspect an identification mark formed on the semiconductor material to form a virtual cutting line for cutting the semiconductor material, or inspect the cutting line of the semiconductor material to check whether the cutting line of the semiconductor material corresponding to each blade relief groove formed on the chuck table is accommodated. Additionally, it is used to inspect each blade relief groove formed on the chuck table before inspecting the semiconductor material.

[0050] In some cases, semiconductor materials have cutting lines marked to individualize each unit, while in others, the cutting lines for cutting the material are unknown. If the cutting lines are unknown, a camera can be used to inspect the recognition marks formed on the semiconductor material to create virtual cutting lines for each semiconductor material.

[0051] At this time, when cutting the cutting line of a semiconductor material with a blade, the cutting is performed with the same thickness as the blade. Therefore, if the thickness of the blade and the thickness of the cutting line are the same, it is possible to inspect whether the cutting line of the semiconductor material is accommodated in the corresponding blade escape groove. However, since the blade thickness may be formed to be thicker than the cutting line of the semiconductor material, the cutting line of the semiconductor material that is actually cut may be formed larger than the cutting line.

[0052] Meanwhile, the semiconductor material (S) refers to a semiconductor strip or substrate, and unit units, which are semiconductor devices, are arranged in a plurality of matrices. The unit units may also be referred to as semiconductor packages. The semiconductor material comprises a material section in which a plurality of unit units are arranged in a matrix, and a scrap section located around the material section. Here, the material section may be a semiconductor material having a single material section composed of one unit, or it may have two or more material sections.

[0053] For example, in the case of having two material sections, it may be configured to include a first material section (PA1, PACKAGE AREA1) and a second material section (PA2, PACKAGE AREA2) that are cut into individual semiconductor packages (P), and a scrap section disposed between the first and second material sections (PA1, PA2) and around the first and second material sections (PA1, PA2).

[0054] The scrap area (CA, CUTTING AREA) is a cutting area in which a semiconductor chip is not mounted on the semiconductor material (S) and is cut and removed by the blade (400). This scrap area (CA) surrounds the first and second material areas (PA1, PA2) and is positioned around the perimeter of the first and second material areas (PA1, PA2).

[0055] The semiconductor material (S) may have multiple unit units in the longitudinal direction (up, down direction) and the unidirectional direction (left, right direction), and when a warpage is formed in the semiconductor material, it is more likely to be formed in the longitudinal direction than in the unidirectional direction because it is affected by bending due to length.

[0056] A semiconductor material (S) is provided with a recognition mark (not shown) that is captured by a camera provided in the cutting section. A cutting line may be provided in the semiconductor material, but if a cutting line is not provided, the recognition mark can be captured by a camera to obtain position information for a virtual cutting line (VL) of the semiconductor material (S).

[0057] The control unit is connected to the strip picker (200), camera, and blade (400) and can control each of the strip picker (200), camera, and blade (400).

[0058] The control unit can control the cutting speed and the height of the blade (400) so that when the blade (400) cuts the scrap section (CA), the first material section (PA1) and the second material section (PA2), at least one of the cutting speed and the height of the blade is set differently to cut.

[0059] The control unit can determine whether the position of the chuck table (300) and the semiconductor material (S) is misaligned by capturing through a camera whether the virtual cutting line (VL) of the semiconductor material (S) is located within the blade escape groove (313) of the chuck table (300).

[0060] The control unit can determine whether the cutting line (VL) of the semiconductor material is located within the blade escape groove (313) of the chuck table (300) through a camera, and whether a misalignment of position between the chuck table (300) and the first material part (PA1) has occurred. If it is determined that a misalignment of position has occurred, the semiconductor material (S) is corrected and aligned to the chuck table (300) through relative movement between the strip picker (200) and the chuck table while the strip picker (200) is picking up the semiconductor material, and the semiconductor material is then delivered back to correct the misalignment of position of the semiconductor material.

[0061] Of course, if the cutting line of the semiconductor material is located within the blade escape groove of the chuck table as a result of the camera's imaging, cutting can be performed based on the cutting line of the semiconductor material.

[0062] Hereinafter, with reference to FIGS. 1 to 6, a cutting method of the semiconductor material cutting device (10) of the present invention will be described.

[0063] FIG. 6 is a schematic diagram of a cutting method of a semiconductor material cutting device of the present invention.

[0064] As illustrated in FIG. 6, a cutting method of a semiconductor material cutting device for manufacturing unit units by cutting a semiconductor material, comprising a material section in which a plurality of unit units are arranged in a matrix and a scrap section located around the material section, along a plurality of cutting lines, comprises: a first alignment step (S10) for obtaining position information for all cutting lines of the semiconductor material by capturing a recognition mark provided at a preset position of the semiconductor material based on the relative movement of a chuck table that adsorbs the semiconductor material to be cut and a camera that inspects the semiconductor material adsorbed on the chuck table; a first cutting step (S20) for performing cutting along one or more preset cutting lines among the plurality of cutting lines of the semiconductor material based on the position information obtained in the first alignment step; and a second alignment step (S30) for obtaining position information of a cutting line to be cut among the remaining cutting lines of the semiconductor material that were not cut in the first cutting step, by capturing a recognition mark provided at a preset position of the semiconductor material based on the relative movement of the chuck table and the camera after the first cutting step is completed. and includes a second cutting step (S40) that performs cutting along the cutting line of the semiconductor material based on the position information obtained in the second alignment step.

[0065] First, a strip picker (200) picks up semiconductor material and transfers the picked-up semiconductor material (S) to a chuck table (300).

[0066] In detail, the strip picker (200) moves along the X-axis to align with the upper part of the chuck table (300) and then descends along the Z-axis. When the strip picker (200) descends, the plurality of suction holes (311) of the chuck table (300) suction the semiconductor material (S), and the suction of the suction part of the strip picker (200) is released. Afterwards, the strip picker (200) rises along the Z-axis, thereby transferring the semiconductor material (S) to the chuck table.

[0067] When the semiconductor material (S) is transferred onto the chuck table (300), the semiconductor material transfer step is completed. In this case, the semiconductor material (S) is positioned on the chuck table (300) without considering the positional misalignment caused by the warpage.

[0068] When the semiconductor material is delivered, a first alignment step is performed to obtain position information regarding the cutting line of the semiconductor material.

[0069] The first alignment step (S10) is a process of obtaining position information for a virtual cutting line (VL) of a semiconductor material (S) delivered to a chuck table (300) through the imaging of a camera.

[0070] At this time, relative movement is performed between the chuck table on which the semiconductor material is adsorbed and the camera to acquire position information for all cutting lines of the semiconductor material. Since the chuck table is configured to be movable in the Y-axis direction and the camera (not shown) is configured to be movable in the X-axis direction, position information for all cutting lines of the semiconductor material adsorbed to the chuck table can be acquired through the relative movement between the chuck table and the camera.

[0071] At this time, the camera can acquire position information for all cutting lines of the semiconductor material by photographing a recognition mark provided at a preset location on the semiconductor material. Here, the recognition mark may be a fiducial mark on which a target is formed to acquire position information of the semiconductor material, or it may be a cutting line if the semiconductor material is equipped with a cutting line.

[0072] The camera can capture a recognition mark provided at a preset location on the semiconductor material (S) to obtain location information for all cutting lines (VL) of the semiconductor material (S).

[0073] The first alignment step is completed by inputting the cutting line (VL) of the acquired semiconductor material into the control unit.

[0074] After the first alignment step is completed, the first cutting step is performed.

[0075] The first cutting step (S20) is a step of performing cutting along one or more pre-set cutting lines among a plurality of cutting lines of a semiconductor material based on position information obtained in the first alignment step.

[0076] In the present invention, the first cutting step may be a step of performing cutting along one or more predetermined cutting lines of a material part among a plurality of cutting lines of a semiconductor material in order to alleviate warpage.

[0077] That is, regarding a material section in which multiple unit units formed on the semiconductor material are arranged in a matrix, the warpage of the semiconductor material can be captured by pre-cutting the cutting lines of one or more material sections.

[0078] In this case, if there is only one pre-set cutting line among the cutting lines of the material section, the center cutting line of the material section located in the middle among the cutting lines of the material section can be removed, and if there are two pre-set cutting lines, cutting at the point where the cutting line of the material section is divided into three equal parts will be advantageous in terms of evenly mitigating the warpage.

[0079] Of course, if necessary, it is also possible to divide the material part into four equal parts by cutting along the long and short sides that intersect the center point of the material part.

[0080] For reference, in the first cutting step, if the material section consists of a single unit, the warpage can be established by cutting a portion of the pre-set cutting lines of the material section as described above, but the warpage can also be established by cutting the scrap.

[0081] That is, in the case of having one or more material sections in which multiple unit sections are arranged in a matrix, the warpage can be captured by cutting the outermost cutting line among the cutting lines of the material sections to remove the scrap section of the semiconductor material.

[0082] In particular, when there are two or more material sections in which multiple unit sections are arranged in a matrix, the same effect as cutting the center cutting line of the material section of the semiconductor material described above can be obtained simply by removing the scrap section.

[0083] Each case in the first cutting step of the present invention is explained in more detail.

[0084] First, in the case of having one or more material sections where multiple unit sections are arranged in a matrix, the scrap section can be removed and the internal cutting line among the cutting lines of the material section can be cut to secure the warpage.

[0085] For reference, since the material section consists of molded substrates and chips, while the scrap section contains only substrates without chips, the cutting speed is controlled differently for the scrap section compared to the material section. In other words, the scrap section can be cut at a faster speed than the material section. Therefore, removing the scrap section first and then cutting the cutting line of the material section is advantageous in terms of cutting speed and shortening the cutting path.

[0086] In addition, when performing cutting along the cutting line of the semiconductor material in the first cutting step of the present invention, the cutting speed or blade height can be set for each cutting line. That is, the scrap section line and the material section cutting line can be cut at different cutting speeds for each line.

[0087] As mentioned earlier, when having only one material section, the effect of holding the warpage is weak because only the outer part of the material section is cut when removing the scrap section. Therefore, the warpage can be held by removing the scrap section and cutting a portion of the cutting lines of the material section.

[0088] In other words, when a material section is provided in which multiple unit sections are arranged in a matrix, the scrap section of the semiconductor material can be removed by cutting the outermost cutting line, and the warpage can be mitigated by performing cutting along one or more pre-set cutting lines of the material section among the multiple cutting lines of the semiconductor material.

[0089] Secondly, you can also capture the warpage by removing the scrap section.

[0090] Referring to the drawings in FIGS. 2 to 4, when two material parts, namely the first and second material parts (PA1, PA2), are provided, the process of cutting and removing the scrap part (CA) can be performed so that only the first material part (PA1) and the second material part (PA2) remain.

[0091] When the blade (400) cuts the scrap portion (CA) along the cutting line (VL) of the semiconductor material (S) obtained in the first alignment step, as shown in FIG. 4b, the scrap portion (CA) between the first and second material portions (PA1, PA2) is removed, and as the portion bent by the warpage is straightened, the first material portion (PA1) moves downward and the second material portion (PA2) moves upward.

[0092] Accordingly, a positional misalignment occurs in which the virtual cutting line (VL) of the first material part (PA1) is located below the centerline of the blade escape groove (313), and the virtual cutting line (VL) of the second material part (PA2) is located above the centerline of the blade escape groove (313).

[0093] In other words, the position information regarding the cutting line of the semiconductor material obtained in the first alignment step becomes misaligned during the first cutting step.

[0094] Of course, both before and after cutting the scrap, the cutting line of the semiconductor material is accommodated within the range of the blade escape groove. However, as shown in FIGS. 4a and 4b, if we examine the positional relationship between the cutting line of the outermost semiconductor material and the blade escape groove, it can be seen that during the first cutting step, the scrap section (CA) between the first and second material sections (PA1, PA2) is removed and the part bent by the warpage is straightened, causing the first row cutting line of the first material section (PA1) to move from the bottom of the blade escape groove to the center, and the last row cutting line of the second material section (PA2) to move from the top of the blade escape groove to the center.

[0095] At this time, if the first row cutting line of the first material section inspected in the first alignment step before removing the scrap section in the first cutting step is located at the center of the blade escape groove, the first row cutting line of the first material section can move from the center of the blade escape groove to the upper part of the blade escape groove after removing the scrap section or cutting the pre-set cutting line of the material section to set the warpage, and if the last row cutting line of the second material section is located at the center of the blade escape groove, the last row cutting line of the second material section can move from the center of the blade escape groove to the lower part of the blade escape groove after removing the scrap section or cutting the pre-set cutting line of the material section to set the warpage.

[0096] In this way, when the blade (400) cuts the outermost cutting line among one or more cutting lines of material parts in which a plurality of unit units are arranged in a matrix to remove the scrap part (CA) of the semiconductor material, the first cutting step is completed.

[0097] In addition, the first cutting step may perform cutting along one or more pre-set cutting lines of the material part among the multiple cutting lines of the semiconductor material without removing the scrap part to secure the warpage, and then remove the scrap part and perform cutting along the remaining cutting lines of the material part.

[0098] In other words, the first cutting step involves cutting a portion of the line of the semiconductor material where warpage has formed to alleviate the warpage; as the warpage is alleviated, the semiconductor material adheres more closely to the chuck table, thereby improving the chuck table's material fixing force. Consequently, during the semiconductor material cutting process, individualization of unit components becomes possible while the material remains stably fixed.

[0099] As mentioned above, after the first cutting step is completed, the warpage of the semiconductor material is relieved and the position information regarding the cutting line of the semiconductor material changes; therefore, if cutting is performed based on the position information regarding the cutting line of the semiconductor material obtained in the first alignment step, the actual cutting line of the material differs from the cutting line of the material obtained in the first step, resulting in reduced cutting precision.

[0100] Therefore, with the warpage relieved through the first cutting step, the second alignment step is performed again to obtain position information of the cutting line of the semiconductor material.

[0101] The second alignment step (S30) captures a recognition mark placed at a preset position on the semiconductor material based on the relative movement of the chuck table and the camera, just like the first alignment step. At this time, there is no need to inspect the cutting lines that have already been cut, and the position information of the cutting line to be cut among the remaining cutting lines that were not cut in the first cutting step can be obtained.

[0102] For reference, if the position information to be acquired in the second alignment step (the cutting line to be cut) is the entire remaining cutting line that has not been cut, the position information for the entire remaining cutting line can be acquired through the relative movement of the chuck table and the camera so that the position information for the entire remaining cutting line can be acquired in the second alignment step.

[0103] In the case where the position information to be acquired in the second alignment step (the cutting line to be cut) is a part of the remaining cutting lines that have not been cut, position information for the entire remaining cutting line can be acquired through relative movement of the chuck table and the camera so that position information for the part of the cutting line can be acquired in the second alignment step.

[0104] That is, based on the position information obtained in the second alignment step, a second cutting step can be performed to cut along the cutting line of the semiconductor material.

[0105] As mentioned above, in the case where the cutting line to be cut in the second alignment step is the entire remaining cutting line, the second alignment step and the second cutting step may each be completed in one process, but the second alignment step and the second cutting step may also be completed in multiple processes.

[0106] To explain in more detail, the second cutting step, which cuts the cutting line that was not cut in the first cutting step, may be performed multiple times, and before performing each second cutting step, a second alignment step to obtain position information of the cutting line to be cut in each second cutting step may be performed first, and each second cutting step may be performed based on the position information obtained in each second alignment step.

[0107] In cases where the semiconductor material requires very precise cutting, is relatively large in size, or has very severe warpage, the second alignment step and the second cutting step are performed multiple times in this manner to gradually alleviate warpage and enable more precise cutting.

[0108] In other words, in the case of warpage, since the warpage unfolds as the semiconductor material is cut and its size decreases, the cutting steps can be appropriately divided and performed according to the warpage state.

[0109] In such cases, the second cutting step may also include the meaning of mitigating warpage of semiconductor materials, just like the first cutting step.

[0110] The semiconductor material cutting device (10) of the present invention can cut by setting a cutting speed or blade height for each cutting line of the semiconductor material when performing the second cutting step.

[0111] For example, the cutting lines of the material section are cut sequentially in the row or column direction using the position information obtained in the second alignment step. However, since the cutting line of the material section located in the last row or last column has a small area supported by the suction hole during cutting, if it is cut at a high speed, problems such as the unit attached to the chuck table jumping out or shifting position may occur during the cutting process.

[0112] Therefore, when cutting the cutting line of the material section located in the last row or last column, the cutting speed can be lowered to cut it into unit more stably.

[0113] Since the present invention allows for controlling the cutting speed for each cutting line of the material section, it may also be possible to control the cutting speed to gradually decrease when cutting a cutting line adjacent to the cutting line of the last row or last column of the material section, taking into account that the adsorption and support area of ​​the material becomes progressively narrower as it approaches the last row or last column for stable adsorption and fixation of the material section.

[0114] In addition, based on the position information obtained in the second alignment step, if a part with particularly severe warpage is detected in a specific section or area of ​​the semiconductor material, the cutting speed can be controlled to be lowered when cutting the cutting line of the material part belonging to that warpage area.

[0115] Hereinafter, each cutting method for the second cutting step of the present invention will be described in more detail.

[0116] For example, if a material section is configured with a matrix of multiple unit components, position information for the remaining cutting lines that were not cut in the first cutting step is obtained based on the results inspected in the second alignment step, and cutting can be performed along the remaining cutting lines of the material section based on the position information obtained in the second alignment step.

[0117] If there are two or more material sections in which multiple unit sections are arranged in a matrix, the second cutting step may be performed in the following manner.

[0118] For example, as shown in FIG. 4a and 4b, when a first material section (PA1) and a second material section (PA2) are provided in a 2 row x 1 column arrangement as material units, in the second alignment step, position information for the cutting line of one of the two material sections, for example, the first material section (PA1), is obtained. Then, according to the obtained position information for the cutting line of the first material section (PA1), cutting is performed along the cutting line of the first material section (PA1). Next, the position information for the cutting line of the remaining second material section (PA2) is obtained, and cutting can be performed along the obtained cutting line of the second material section (PA2).

[0119] As another example, as shown in FIG. 4a and 4b, when the first material section (PA1) and the second material section (PA2) are provided in a 2 row x 1 column in a material unit, position information of the cutting line for each of the two material sections is obtained in the second alignment step.

[0120] Subsequently, cutting is performed together according to the position information of the cutting line. When cutting each of the first material part (PA1) and the second material part (PA2) along the row direction, the areas of each material part do not affect each other. Therefore, the row direction cutting line of the first material part (PA1) is cut sequentially according to the position information of the first material part (PA1) obtained in the second alignment step, and the row direction cutting line of the second material part (PA2) is cut sequentially according to the position information of the second material part (PA2) obtained in the second alignment step. However, when cutting is performed along the column direction, the first material part (PA1) and the second material part (PA2) are cut together, and the average value of the column direction position value of the first material part and the column direction position value of the second material part obtained in the second alignment step is calculated. That is, for each thermal cutting line, the thermal average value of the first material section and the second material section is calculated, and based on this, the thermal cutting lines can be cut sequentially while cutting together along the thermal direction of the first material section and the second material section.

[0121] Therefore, based on the position information of each material part obtained in the second alignment step, the cutting line of the material part can be cut using the average value of the position values ​​of the cutting lines of each material part that are cut together.

[0122] As another example, although not illustrated, in the case where the material unit is provided in 2 rows x 2 columns, as mentioned above, the second alignment step and the second cutting step may be performed four times each for each material, or the second alignment step and the second cutting step may be performed once to perform the cutting at once.

[0123] In other words, cutting can be performed at once using the average value of the row-direction cutting line position values ​​of materials placed in the same row direction, and cutting can also be performed at once using the average value of the column-direction cutting line position values ​​of materials placed in the same column direction.

[0124] Of course, in addition to this, the alignment and cutting steps can also be performed by dividing a single material part into sections by area, inspecting and cutting each section, and then inspecting and cutting the remaining sections.

[0125] In addition, if necessary, even if multiple material sections are provided, the alignment and cutting steps may be performed by grouping part or all of the relevant material sections.

[0126] Of course, when performing the cutting step, it is possible to cut by setting the cutting speed and blade height for each cutting line individually.

[0127] At this time, the cutting speed can be adjusted by controlling the movement speed of the chuck table.

[0128] The blade height can be set through the height from the upper surface of the chuck table to the blade.

[0129] Although the cutting method of the semiconductor material cutting device of the present invention was previously described as an example of completely cutting the semiconductor material, the present invention is not limited thereto and includes the concept of half-cutting, which involves cutting a portion of the semiconductor material's thickness (depth).

[0130] When attempting to cut semiconductor materials to a predetermined depth, the height of the semiconductor materials varies due to warpage. Therefore, as in the present invention, by removing scrap or similar materials in the first cutting step to flatten the warpage, it is possible to cut each material to the same depth in the second cutting step. Additionally, during half-cutting, the blade height can be adjusted for each cutting line according to the condition of the warpage or similar materials for each line, thereby enabling cutting to the same depth.

[0131] In addition, the scrap portion (CA) cut by the blade (400) in the first cutting step of the cutting method of the semiconductor material cutting device, and the first material portion (PA1) and second material portion (PA2) cut by the blade (400) in the second cutting step, may be cut by setting at least one of the cutting speed and cutting depth of the blade (400) differently in each step.

[0132] In addition, when cutting the scrap portion (CA) in the first cutting step, at least one of the cutting speed and cutting depth of the blade (400) may be set differently and cut.

[0133] For example, in the first cutting step, the cutting speed of the scrap section (CA) between the first material section (PA1) and the second material section (PA2) where warpage is formed may be set slower than the cutting speed of each of the first material section (PA1) and the second material section (PA2) where warpage is not formed. Accordingly, positional misalignment caused by warpage of the cut first material section (PA1) and the second material section (PA2) can be minimized.

[0134] Although the semiconductor material cutting device of the present invention was described above as an example of a process for cutting a material with warpage, it is not limited to warpage; even in cases where there is no warpage, if the semiconductor material is cut, positional misalignment may occur due to changes in internal stress, so cutting can be performed using the cutting method described above for precise cutting.

[0135] The cutting method of a semiconductor material cutting device having the above-described configuration has the following effects.

[0136] Conventional semiconductor materials cut the entire line based on the position information of the initially inspected material without considering warpage, even if warpage is present. Consequently, cutting precision inevitably suffers because the cutting proceeds according to the initial position information, even though the warpage unfolds and the cutting line position information changes during the cutting process.

[0137] However, the cutting method of the semiconductor material cutting device according to the present invention has the effect of ensuring the cutting precision of the semiconductor package by first cutting a portion of the cutting lines of the semiconductor material to mitigate the warpage, even if warpage is present, and then re-inspecting the cutting lines of the semiconductor material.

[0138] In addition, precise cutting can be performed even on semiconductor materials without warpage, even if their position is misaligned due to changes in internal stress.

[0139] In addition, the cutting method of the semiconductor material cutting device according to the present invention allows cutting by setting the cutting speed or blade height for each cutting line, so when cutting the area, warpage, edge, outer line, etc. of the material to be cut, the cutting speed is lowered, thereby minimizing the misalignment of the material during the cutting process and ensuring the cutting precision of the material.

[0140] As described above, although the present invention has been explained with reference to preferred embodiments, a person skilled in the art may implement the present invention with various modifications or variations without departing from the spirit and scope of the invention as described in the following claims. Explanation of the symbols

[0141] 10: Semiconductor material cutting device 100: Inlet Rail 200: Strip Picker 210: Gripper 230: StripVision 250: Guide rail 300: Chuck table 310: Jig rubber 311: Suction hole 313: Blade Doflamingo Home 400: Blade S: Semiconductor Materials CA: Scrap Department PA1: 1st Materials Department PA2: 2nd Materials Department P: Unit S10: First alignment step S20: First cutting step S30: Second alignment step S40: Second cutting step

Claims

Claim 1 A cutting method for a semiconductor material cutting device, comprising a material section in which a plurality of unit units are arranged in a matrix and a scrap section located around the periphery of the material section, wherein the semiconductor material is cut along a plurality of cutting lines to manufacture unit units, the method comprises: a first alignment step of obtaining position information for all cutting lines of the semiconductor material by capturing an identification mark provided at a preset position of the semiconductor material based on the relative movement of a chuck table that adsorbs the semiconductor material to be cut and a camera that inspects the semiconductor material adsorbed on the chuck table; a first cutting step of performing cutting along one or more preset cutting lines among a plurality of cutting lines of the semiconductor material based on the position information obtained in the first alignment step; and a second alignment step of obtaining position information of a cutting line to be cut among the remaining cutting lines of the semiconductor material that were not cut in the first cutting step, by capturing an identification mark provided at a preset position of the semiconductor material based on the relative movement of the chuck table and the camera after the first cutting step is completed. A cutting method of a semiconductor material cutting device comprising: a second cutting step for performing cutting along a cutting line of the semiconductor material based on position information obtained in the second alignment step; wherein, when cutting along the cutting line of the semiconductor material in the first cutting step or the second cutting step, the cutting speed is set for each cutting line, and when the cutting line of the material part is cut sequentially in a row or column direction in the second cutting step, the cutting speed of the cutting line located in the last row or column of the material part is reduced. Claim 2 A cutting method for a semiconductor material cutting device according to claim 1, wherein a second cutting step of a cutting line not cut in the first cutting step is performed multiple times, and a second alignment step for obtaining position information of the cutting line to be cut in each second cutting step is performed before each second cutting step, and each second cutting step is performed based on the position information obtained in each second alignment step. Claim 3 A cutting method of a semiconductor material cutting device according to claim 1, wherein the first cutting step is a step of performing cutting along one or more pre-set cutting lines of a material part among a plurality of cutting lines of the semiconductor material. Claim 4 A cutting method of a semiconductor material cutting device according to claim 1, wherein the first cutting step is characterized by cutting the outermost cutting line among one or more cutting lines of a material part in which a plurality of unit units are arranged in a matrix to remove the scrap part of the semiconductor material. Claim 5 A cutting method of a semiconductor material cutting device according to claim 1, wherein the first cutting step is characterized by cutting the outermost cutting line among one or more cutting lines of a material part in which a plurality of unit units are arranged in a matrix to remove the scrap part of the semiconductor material, and performing cutting along one or more pre-set cutting lines of a material part among the plurality of cutting lines of the semiconductor material. Claim 6 A cutting method of a semiconductor material cutting device according to claim 4 or 5, wherein when performing the second cutting step for a semiconductor material having two or more material parts, the cutting line of the material part is cut using the average value of the position values ​​of the cutting lines of each material part that are cut together, based on the position information of each material part obtained in the second alignment step. Claim 7 A cutting method of a semiconductor material cutting device according to claim 1, characterized in that, when performing cutting along the cutting line of the semiconductor material in the first cutting step or the second cutting step, the blade height is set for each cutting line to perform the cutting. Claim 8 delete

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