Method for manufacturing semiconductor substrate

Abstract

The present disclosure provides a method of manufacturing a semiconductor substrate, and the method includes the following operations. A supporting wafer and a device wafer are bonded, in which the device wafer is disposed on the supporting wafer and is a silicon wafer. A cross-section in the device wafer is irradiated with an energy beam, in which the energy beam is a laser or an inert-gas ion beam, and the device wafer has an upper part located on the cross-section and a lower part located under the cross-section. The upper part is removed.

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