Display substrate and display panel

Abstract

Disclosed is a display substrate. The display substrate comprises a plurality of sub-pixels arranged in a plurality of rows and columns; each sub-pixel comprises a light-emitting device; and the light-emitting device comprises a first electrode, a first light-emitting unit, a charge generation laminate, a second light-emitting unit and a second electrode which are sequentially stacked. In a first direction, the colors of light emitted by the light-emitting devices in two adjacent sub-pixels are different, and the proportion of miscellaneous peaks of emission peaks in light-emitting spectra corresponding to the light emitted by the light-emitting devices in at least some of the sub-pixels is less than or equal to 5%.

Description

Display substrate and display panel

[0001] This application claims priority to Chinese patent application No. 202310788322.6, filed on June 29, 2023, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present disclosure relates to the field of display technology, and in particular to a display substrate and a display panel. Background Art

[0003] OLED (Organic Light Emitting Diode) display devices have become one of the most competitive and promising display devices due to their advantages such as self-luminescence, fast response speed, high brightness, full viewing angle, and flexible display.

[0004] Summary of the Invention

[0005] In one aspect, a display substrate is provided. The display substrate includes a plurality of sub-pixels arranged in multiple rows and columns, each sub-pixel including a light-emitting device, wherein the light-emitting device includes a first electrode, a first light-emitting unit, a charge generation stack, a second light-emitting unit, and a second electrode, which are sequentially stacked. The light emitted by the light-emitting devices in two adjacent sub-pixels along the first direction has different colors, and the proportion of impurity peaks in the emission spectrum corresponding to the light emitted by the light-emitting devices in at least some of the sub-pixels is less than or equal to 5%.

[0006] In some embodiments, when the grayscale of the light-emitting device in the sub-pixel is higher than a threshold grayscale, the proportion of stray peaks in the emission peaks in the emission spectrum corresponding to the light emitted by the light-emitting device in at least some of the sub-pixels is approximately 0%. When the grayscale of the light-emitting device in the sub-pixel is lower than the threshold grayscale, the proportion of stray peaks in the emission peaks in the emission spectrum corresponding to the light emitted by the light-emitting device in at least some of the sub-pixels is less than or equal to 4%.

[0007] In some embodiments, the lateral resistance of the charge generation stack is greater than or equal to 100 GΩ / μm2.

[0008] In some embodiments, the lateral resistance of the charge generation stack is less than or equal to 260 GΩ / μm2.

[0009] In some embodiments, the charge generation stack includes an n-type charge generation layer and a p-type charge generation layer, wherein the p-type charge generation layer is located on a side of the n-type charge generation layer away from the first electrode. The charge generation stack is configured such that the n-type charge generation layer transfers electrons to the first light-emitting unit and the p-type charge generation layer transfers holes to the second light-emitting unit.

[0010] In some embodiments, the minimum distance between the n-type charge generation layer close to the p-type charge generation layer and the first light-emitting unit is smaller than the minimum distance between the first electrode away from the first light-emitting unit and the first light-emitting unit.

[0011] In some embodiments, the thickness of the n-type charge generation layer ranges from

[0012] In some embodiments, the thickness of the n-type charge generation layer ranges from

[0013] In some embodiments, the n-type charge generation layer is doped with a first impurity, and the doping concentration of the first impurity in the n-type charge generation layer is in a range of 0.5% to 2%.

[0014] In some embodiments, the p-type charge generation layer is doped with a second impurity, and the doping concentration of the second impurity in the p-type charge generation layer is in a range of 5% to 15%.

[0015] In some embodiments, when the doping concentration of the first impurity in the n-type charge generation layer is in the range of 0.5% to 1%, the doping concentration of the second impurity in the p-type charge generation layer is in the range of 10% to 15%. Alternatively, when the doping concentration of the first impurity in the n-type charge generation layer is in the range of 1% to 2%, the doping concentration of the second impurity in the p-type charge generation layer is in the range of 5% to 10%.

[0016] In some embodiments, when the lateral resistance of the charge generation stack is in the range of 180 GΩ / μm2 to 260 GΩ / μm2, the doping concentration of the second impurity in the p-type charge generation layer is in the range of 5% to 10%. Alternatively, when the lateral resistance of the charge generation stack is in the range of 100 GΩ / μm2 to 180 GΩ / μm2, the doping concentration of the second impurity in the p-type charge generation layer is in the range of 10% to 15%.

[0017] In some embodiments, along the first direction, a minimum distance between two adjacent sub-pixels is greater than or equal to 19 μm.

[0018] In some embodiments, along the first direction, a minimum distance between two adjacent sub-pixels is less than or equal to 24 μm.

[0019] In some embodiments, the thickness of the p-type charge generation stack ranges from

[0020] In some embodiments, the light-emitting device further comprises a hole transport layer and an electron transport layer, wherein the hole transport layer is located between the first electrode and the first light-emitting unit, and the electron transport layer is located between the second electrode and the second light-emitting unit.

[0021] In some embodiments, the light emitting device further comprises a first hole blocking layer and a second hole blocking layer, wherein the first hole blocking layer is located between the first light emitting unit and the charge generation stack, and the second hole blocking layer is located between the electron transport layer and the second light emitting unit.

[0022] In some embodiments, the plurality of sub-pixels include a plurality of first sub-pixels emitting light of different colors, a plurality of second sub-pixels, and a plurality of third sub-pixels, wherein the third sub-pixel is a blue sub-pixel, and a size of the blue sub-pixel is larger than a size of any of the plurality of first sub-pixels and the plurality of second sub-pixels.

[0023] In another aspect, a display panel is provided, comprising the display substrate according to any one of the above embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] To more clearly illustrate the technical solutions of the present disclosure, the following briefly introduces the drawings required for use in some embodiments of the present disclosure. Obviously, the drawings described below are only drawings of some embodiments of the present disclosure, and those skilled in the art can also derive other drawings based on these drawings. Furthermore, the drawings described below are schematic diagrams and are not intended to limit the actual dimensions of the products, actual processes of the methods, actual timing of signals, and the like involved in the embodiments of the present disclosure.

[0025] FIG1 is a structural diagram of a display device according to some embodiments;

[0026] FIG2 is a structural diagram of a display panel according to some embodiments;

[0027] FIG3 is a cross-sectional view taken along line BB' in FIG2;

[0028] FIG4 is a structural diagram of a light emitting device according to some embodiments;

[0029] FIG5 is a spectrum diagram of a red light emitting device according to some possible implementations;

[0030] FIG6 is a spectrum diagram of a green light emitting device according to some possible implementations;

[0031] FIG7 is a spectrum diagram of a blue light emitting device according to some possible implementations;

[0032] FIG8 is a spectrum diagram of a red light emitting device according to some other possible implementations;

[0033] FIG9 is a spectrum diagram of a green light emitting device according to some other possible implementations;

[0034] FIG10 is a spectrum diagram of a blue light emitting device according to some other possible implementations;

[0035] FIG11 is a spectrum diagram of a red light emitting device according to some embodiments;

[0036] FIG12 is a spectrum diagram of a green light emitting device according to some embodiments;

[0037] FIG13 is a spectrum diagram of a blue light emitting device according to some embodiments;

[0038] FIG14 is a structural diagram of a light emitting device according to some other embodiments;

[0039] FIG15 is a spectrum diagram of a red light emitting device according to some other embodiments;

[0040] FIG16 is a spectrum diagram of a green light emitting device according to some other embodiments;

[0041] FIG17 is a spectrum diagram of a blue light emitting device according to some other embodiments;

[0042] FIG18 is a spectrum diagram of a red light emitting device according to yet other embodiments;

[0043] FIG19 is a spectrum diagram of a green light emitting device according to yet other embodiments;

[0044] FIG20 is a spectrum diagram of a blue light emitting device according to still other embodiments;

[0045] FIG21 is a spectrum diagram of a red light emitting device according to some further embodiments;

[0046] FIG22 is a spectrum diagram of a green light emitting device according to some further embodiments;

[0047] FIG23 is a spectrum diagram of a blue light emitting device according to some further embodiments;

[0048] FIG24 is a spectrum diagram of a red light emitting device according to still other embodiments;

[0049] FIG25 is a spectrum diagram of a green light emitting device according to still other embodiments;

[0050] FIG26 is a spectrum diagram of a blue light emitting device according to still other embodiments;

[0051] FIG27 is a spectrum diagram of a red light emitting device according to yet other embodiments;

[0052] FIG28 is a spectrum diagram of a green light emitting device according to still other embodiments;

[0053] FIG29 is a spectrum diagram of a blue light emitting device according to still other embodiments;

[0054] FIG30 is a spectrum diagram of a red light emitting device according to yet other embodiments;

[0055] FIG31 is a spectrum diagram of a green light emitting device according to yet other embodiments;

[0056] FIG32 is a spectrum diagram of a blue light emitting device according to still other embodiments;

[0057] FIG33 is a spectrum diagram of a red light emitting device according to yet other embodiments;

[0058] FIG34 is a spectrum diagram of a green light emitting device according to still other embodiments;

[0059] FIG35 is a spectrum diagram of a blue light emitting device according to still other embodiments;

[0060] FIG36 is a spectrum diagram of a red light emitting device according to still other embodiments;

[0061] FIG37 is a spectrum diagram of a green light emitting device according to still other embodiments;

[0062] FIG38 is a spectrum diagram of a blue light emitting device according to yet other embodiments;

[0063] FIG39 is a spectrum diagram of a red light emitting device according to yet other embodiments;

[0064] FIG40 is a spectrum diagram of a green light emitting device according to still other embodiments;

[0065] FIG41 is a spectrum diagram of a blue light emitting device according to still other embodiments;

[0066] FIG42 is a spectrum diagram of a red light emitting device according to still other embodiments;

[0067] FIG43 is a spectrum diagram of a green light emitting device according to still other embodiments;

[0068] FIG44 is a spectrum diagram of a blue light emitting device according to still other embodiments;

[0069] FIG45 is a spectrum diagram of a red light emitting device according to still other embodiments;

[0070] FIG46 is a spectrum diagram of a green light emitting device according to still other embodiments;

[0071] FIG47 is a spectrum diagram of a blue light emitting device according to still other embodiments;

[0072] FIG48 is a spectrum diagram of a red light emitting device according to still other embodiments;

[0073] FIG49 is a spectrum diagram of a green light emitting device according to still other embodiments;

[0074] FIG50 is a spectrum diagram of a blue light emitting device according to yet other embodiments;

[0075] FIG51 is a spectrum diagram of a red light emitting device according to yet other embodiments;

[0076] FIG52 is a spectrum diagram of a green light emitting device according to still other embodiments;

[0077] FIG53 is a spectrum diagram of a blue light emitting device according to yet other embodiments;

[0078] FIG54 is a spectrum diagram of a red light emitting device according to yet other embodiments;

[0079] FIG55 is a spectrum diagram of a green light emitting device according to still other embodiments;

[0080] FIG56 is a spectrum diagram of a blue light emitting device according to yet other embodiments;

[0081] FIG57 is a structural diagram of a display substrate according to some other embodiments;

[0082] FIG58 is a spectrum diagram of a red light emitting device according to yet other embodiments;

[0083] FIG59 is a spectrum diagram of a green light emitting device according to still other embodiments;

[0084] FIG60 is a spectrum diagram of a blue light emitting device according to still other embodiments;

[0085] FIG61 is a spectrum diagram of a red light emitting device according to yet other embodiments;

[0086] FIG62 is a spectrum diagram of a green light emitting device according to still other embodiments;

[0087] FIG63 is a spectrum diagram of a blue light emitting device according to still other embodiments;

[0088] FIG64 is a structural diagram of a light emitting device according to yet other embodiments;

[0089] FIG65 is a structural diagram of a light-emitting device according to still other embodiments. DETAILED DESCRIPTION

[0090] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the embodiments described are only some embodiments of the present disclosure, not all embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of the present disclosure.

[0091] Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and its other forms, such as the third person singular form "comprises" and the present participle form "comprising", are to be interpreted as open and inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" are intended to indicate that the particular features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the particular features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0092] In the following, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0093] When describing some embodiments, the expressions "coupled" and "connected" and their derivatives may be used. The term "connected" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. The term "coupled" indicates, for example, that two or more components are in direct physical or electrical contact. The term "coupled" or "communicatively coupled" may also refer to two or more components that are not in direct contact with each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the contents of this document.

[0094] “At least one of A, B and C” has the same meaning as “at least one of A, B or C” and both include the following combinations of A, B and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B and C.

[0095] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0096] As used herein, the term "if" is optionally interpreted to mean "when" or "upon" or "in response to determining" or "in response to detecting," depending on the context. Similarly, the phrases "if it is determined that" or "if [stated condition or event] is detected" are optionally interpreted to mean "upon determining" or "in response to determining" or "upon detecting [stated condition or event]" or "in response to detecting [stated condition or event]," depending on the context.

[0097] The use of "adapted to" or "configured to" herein is intended to be open and inclusive language that does not exclude devices adapted or configured to perform additional tasks or steps.

[0098] Additionally, the use of “based on” is meant to be open and inclusive, as a process, step, calculation, or other action “based on” one or more stated conditions or values ​​may, in practice, be based on additional conditions or values ​​beyond those stated.

[0099] As used herein, "about," "substantially," or "approximately" includes the stated value and an average value that is within an acceptable range of deviation from the particular value as determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0100] As used herein, "parallel", "perpendicular", and "equal" include the situations described and situations similar to the situations described, and the range of the similar situations is within an acceptable deviation range, wherein the acceptable deviation range is as determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the specific quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range of approximate parallelism can be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range of approximate perpendicularity can also be, for example, a deviation within 5°. "Equal" includes absolute equality and approximate equality, wherein the acceptable deviation range of approximate equality can be, for example, that the difference between the two equals is less than or equal to 5% of either one.

[0101] It will be understood that when a layer or element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present therebetween.

[0102] Exemplary embodiments are described herein with reference to cross-sectional and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and the area of ​​regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are contemplated. Therefore, the exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include deviations in shape due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device and are not intended to limit the scope of the exemplary embodiments.

[0103] FIG1 is a structural diagram of a display device according to some embodiments. Referring to FIG1 , some embodiments of the present disclosure provide a display device 300 , which includes a display panel 200 .

[0104] Exemplarily, the display device 300 further includes a frame, a display driver IC (Integrated Circuit), and other electronic components.

[0105] In addition, the display device 300 may also include an under-screen camera and an under-screen fingerprint recognition sensor, so that the display device can realize various functions such as taking pictures, recording videos, fingerprint recognition or face recognition.

[0106] Exemplarily, the display device 300 may be an electroluminescent display device. For example, the display device 300 may be an organic light-emitting diode (OLED) or a quantum dot light-emitting diode (QLED).

[0107] When the display device 300 is an organic electroluminescent display device, the corresponding display panel 200 may be an organic electroluminescent display panel. Alternatively, when the display device 300 is a quantum dot electroluminescent display device, the corresponding display panel 200 may be a quantum dot electroluminescent display panel.

[0108] Exemplarily, the display device 300 can be any display device that displays images, whether in motion (e.g., video) or fixed (e.g., still images), and whether text or images. More specifically, it is expected that the display device of the embodiments described can be implemented in or associated with a variety of electronic devices, such as (but not limited to) mobile phones, wireless devices, personal data assistants (PDAs), handheld or portable computers, GPS receivers / navigators, cameras, MP4 video players, camcorders, game consoles, watches, clocks, calculators, television monitors, flat-panel displays, computer monitors, automotive displays (e.g., odometer displays, etc.), navigation systems, cockpit controls and / or displays, displays of camera views (e.g., displays of rearview cameras in vehicles), electronic photographs, electronic billboards or signs, projectors, architectural structures, packaging, and aesthetic structures (e.g., displays of images of a piece of jewelry), etc.

[0109] The following describes an OLED display device and its corresponding OLED display panel as an example:

[0110] FIG. 2 is a structural diagram of a display panel according to some embodiments.

[0111] 2 , some embodiments of the present disclosure provide a display panel 200. The display panel 200 includes a display area AA and a peripheral area SA. The peripheral area SA may be located on at least one side (e.g., one side; or, for example, all four sides, i.e., including the upper and lower sides and the left and right sides) of the display area AA.

[0112] The display panel 200 includes a plurality of sub-pixels P disposed in the display area AA. The display panel 200 may display a predetermined image in the display area AA through light emitted by the plurality of sub-pixels P. Specifically, the plurality of sub-pixels P may include a plurality of sub-pixels emitting different colors.

[0113] For ease of explanation, the above-mentioned multiple sub-pixels P are described in this application as being arranged in a matrix. In this case, the sub-pixels P arranged in a row along the first direction X are referred to as sub-pixels in the same row, and the sub-pixels P arranged in a row along the second direction Y are referred to as sub-pixels in the same column.

[0114] The first direction X and the second direction Y intersect. Here, the first direction X and the second direction Y intersect each other. The angle between the first direction X and the second direction Y can be set according to actual needs. For example, the angle between the first direction X and the second direction Y can be 85°, 89°, or 90°, etc.

[0115] Exemplarily, the plurality of sub-pixels P include a first sub-pixel P1, a second sub-pixel P2, and a third sub-pixel P3. The first sub-pixel P1, the second sub-pixel P2, and the third sub-pixel P3 respectively emit three primary colors of light. For example, the first sub-pixel P1 may emit red light, the second sub-pixel P2 may emit green light, and the third sub-pixel P3 may emit blue light.

[0116] FIG3 is a cross-sectional view taken along line BB′ in FIG2 .

[0117] 2 and 3 , the display panel 200 further includes multiple film layers. The multiple film layers in the display panel 200 are described below:

[0118] In some embodiments, the multiple film layers in the display panel 200 include a display substrate 100, which includes a plurality of light-emitting devices O. The plurality of light-emitting devices O in the display substrate 100 are used to emit light, so that the display panel 200 can display images. The display panel 200 can be the display panel 200 in the display device 300 described above.

[0119] For example, the light emitting device O may be an organic light emitting diode (OLED) or a quantum dot light emitting diode (QLED). The following description will take the case where the light emitting device O may be an organic light emitting diode (OLED) as an example.

[0120] In some embodiments, the multiple film layers in the display panel 200 further include a substrate 210, and a pixel circuit layer 220 and a display substrate 100 located on the substrate. The display substrate 100 is located on a side of the pixel circuit layer 220 away from the substrate 210.

[0121] In some examples, substrate 210 may be a flexible substrate. Exemplarily, the material of substrate 210 may be an organic material. For example, the material of substrate 210 may be any one of polyimide (PI), polycarbonate (PC), or polyvinyl chloride (PVC).

[0122] In other examples, the substrate 210 may be a rigid substrate, for example, a glass substrate or a PMMA (Polymethyl methacrylate) substrate.

[0123] In some examples, the pixel circuit layer 220 includes a plurality of pixel driving circuits M, and the pixel driving circuit M includes a plurality of transistors. In some examples, the structure of the pixel driving circuit M in the present disclosure includes multiple structures, which can be selected according to actual needs. For example, the structure of the pixel driving circuit M may include "2T1C", "6T1C", "7T1C", "6T2C", "7T2C" or "8T1C", etc. Here, "T" represents a thin film transistor, and the number in front of "T" represents the number of thin film transistors; "C" represents a storage capacitor (Capacitance), and the number in front of "C" represents the number of storage capacitors C. The following is an introduction taking the "7T1C" pixel driving circuit M as an example.

[0124] Among them, no matter what structure the pixel driving circuit M has, the pixel driving circuit M needs to be electrically connected to the light-emitting device O (the anode of the light-emitting device O) of the display substrate 100, so as to use the pixel driving circuit M in the pixel circuit layer 220 to control the light-emitting device O in the display substrate 100 to emit light, so that the display panel 200 can realize picture display.

[0125] In some examples, the plurality of pixel driving circuits M and the plurality of light-emitting devices O in the display panel 200 may be electrically connected in a one-to-one correspondence. In other examples, one pixel driving circuit M may be electrically connected to multiple light-emitting devices O, or multiple pixel driving circuits M may be electrically connected to one light-emitting device O.

[0126] Below, the present disclosure takes the electrical connection between one pixel driving circuit M and one light-emitting device O as an example to introduce the structure of the display panel 200.

[0127] Based on this, for a single sub-pixel P: a sub-pixel P may include a light-emitting device O located in the display substrate 100 and a pixel driving circuit M located in the pixel circuit layer 220 and electrically connected to the light-emitting device O.

[0128] The above describes the film structure of the display panel 200 in conjunction with the relevant drawings. The following describes the structure of the display substrate 100 in the display panel 200 in conjunction with the relevant drawings.

[0129] 3 , some embodiments of the present disclosure provide a display substrate 100. The display substrate 100 may be the display substrate described above.

[0130] The display substrate 100 includes a plurality of sub-pixels P arranged in multiple rows and columns. The sub-pixels P in the display substrate 100 correspond to the sub-pixels P in the display panel 200 , and are not described in detail herein.

[0131] It should be noted that, since this embodiment mainly describes the structure of the display substrate 100 , the pixel circuit layer is not involved at this time. That is, at this time, the sub-pixel P only includes the light-emitting device O in the display substrate 100 .

[0132] FIG4 is a structural diagram of a light emitting device according to some embodiments.

[0133] As shown in Figure 4 , with the continuous advancement of display technology, people's pursuit of display quality is also increasing. To further reduce power consumption and achieve high brightness, the single light-emitting layer in the light-emitting device O can be replaced with two light-emitting layers, and a charge generation layer (CGL) 30 can be added between the two light-emitting layers to achieve a tandem EL design. Specifically, the two light-emitting layers (first light-emitting unit 20 and second light-emitting unit 40) are connected in series using the charge generation layer 30 to form a light-emitting device O with a tandem EL design.

[0134] However, the inventors of the present disclosure have discovered through research that, since the charge generation stack 30 has strong conductivity and the first light-emitting unit 20, the charge generation stack 30, and the second light-emitting unit 40 of adjacent sub-pixels P are all connected, the charge generation stack 30 easily causes crosstalk between two adjacent sub-pixels P, thereby seriously affecting the display quality.

[0135] Specifically, because the distance between the charge generation stacks 30 of two adjacent sub-pixels P in the direction of the line connecting them is small, and the resistance of the charge generation stack 30 in the direction of the line is also small, carriers in the charge generation stack 30 are easily transferred from one of the two adjacent sub-pixels P to the other of the two adjacent sub-pixels P through the charge generation stack 30 along the direction of the line. Therefore, the charge generation stack 30 is likely to cause crosstalk between the two adjacent sub-pixels P, resulting in color shift, which seriously affects the display quality.

[0136] Since the crosstalk problem of the light-emitting device O in a low grayscale state is more serious than the crosstalk problem of the light-emitting device O in a high grayscale state, the following description is made by taking the grayscale of the light-emitting device O in the display substrate 100 as a high grayscale (for example, 255 grayscale) as an example:

[0137] FIG5 is a spectrum diagram of a red light emitting device according to some possible implementations, FIG6 is a spectrum diagram of a green light emitting device according to some possible implementations, and FIG7 is a spectrum diagram of a blue light emitting device according to some possible implementations.

[0138] Among them, the light-emitting device O shown in Figure 5 can be a first light-emitting device O1, and the first light-emitting device O1 is located in the first sub-pixel P1. The light-emitting device O shown in Figure 6 can be a second light-emitting device O2, and the second light-emitting device O2 is located in the second sub-pixel P2. The light-emitting device O shown in Figure 7 can be a third light-emitting device O3, and the third light-emitting device O3 is located in the third sub-pixel P3.

[0139] As shown in Figures 5 to 7 , the spectra of the dual-layer light-emitting device (the light-emitting device O with a tandem EL design) emitting various colors clearly exhibit numerous stray peaks compared to the spectra of the single-layer light-emitting device (comprising only one light-emitting unit). This is because the charge generation stack 30 easily causes crosstalk between two adjacent sub-pixels P. This can cause crosstalk when the display substrate 100 illuminates a light-emitting device O of one color, leading to the mistaken ignition of the light-emitting devices O of two adjacent sub-pixels P. Stray peaks emitting other colors are clearly observed in the corresponding spectra. This, in turn, results in an insufficient color gamut and impure colors in the light-emitting device O, severely impacting display quality.

[0140] In some feasible embodiments, FIG8 is a spectrum diagram of a red light-emitting device according to other feasible embodiments, FIG9 is a spectrum diagram of a green light-emitting device according to other feasible embodiments, and FIG10 is a spectrum diagram of a blue light-emitting device according to other feasible embodiments.

[0141] As shown in Figures 8 to 10 , a spacer column can be provided in the charge generation stack 30 between two adjacent sub-pixels P. That is, the charge generation stack 30 between two adjacent sub-pixels P is disconnected, and a spacer column is provided between the charge generation stack 30 between the two sub-pixels P. The spacer column effectively prevents lateral crosstalk between carriers in the charge generation stack 30 between the two sub-pixels P, reduces the presence of stray peaks in the spectrum of each light-emitting device O, improves the color shift problem of the display substrate 100, and enhances display quality.

[0142] However, the inventors of the present disclosure have discovered that while providing isolation columns within the display substrate 100 can help alleviate the problem of lateral carrier crosstalk within the charge generation stack 30 of the light-emitting device O and improve display quality, the addition of isolation columns within the display substrate 100 also leads to corresponding problems. For example, the addition of isolation columns requires an additional patterning process in the manufacturing process of the display substrate 100, which not only affects the working support of the display substrate 100 but also increases costs. Furthermore, the addition of isolation columns increases the resistance of the display substrate 100 and the power consumption of the light-emitting device O, hindering the realization of a low-power display substrate 100.

[0143] FIG11 is a spectrum diagram of a red light emitting device according to some embodiments, FIG12 is a spectrum diagram of a green light emitting device according to some embodiments, and FIG13 is a spectrum diagram of a blue light emitting device according to some embodiments.

[0144] Among them, the existing double-layer light-emitting devices in Figures 11 to 13 are light-emitting devices in the above-mentioned feasible manner, and the light-emitting devices are light-emitting devices provided in some embodiments of the present disclosure, and are introduced by taking the grayscale of the light-emitting device O in the display substrate 100 as a high grayscale (for example, 255 grayscale) as an example.

[0145] To address the above issues, some embodiments of the present disclosure disclose a display substrate 100. As shown in FIG4 and FIG11 to FIG13 , the display substrate 100 includes a plurality of sub-pixels P arranged in multiple rows and columns, each of the sub-pixels P including a light-emitting device O. Along a first direction X, the light emitted by the light-emitting devices O in two adjacent sub-pixels P has different colors, and the proportion of impurity peaks in the emission peak corresponding to the light emitted by the light-emitting device O in any sub-pixel P in the emission spectrum is less than or equal to 5%.

[0146] The following will first introduce in detail the light-emitting device O with a double-layer luminescence (Tandem EL) design:

[0147] As shown in FIG4 , a light-emitting device O includes a first electrode 10, a first light-emitting unit 20, a charge generation stack 30, a second light-emitting unit 40, and a second electrode 50, which are sequentially stacked. The first light-emitting unit 20 and the second light-emitting unit 40 are stacked, and the charge generation stack 30 is added between the first light-emitting unit 20 and the second light-emitting unit 40 to serve as the second electrode corresponding to the first light-emitting unit 20 and the first electrode corresponding to the second light-emitting unit 40, thereby forming a light-emitting device O with a tandem EL design.

[0148] Based on this, the first electrode 10, the first light-emitting unit 20, and the charge generation stack 30 can form an independent and complete light-emitting element, and the charge generation stack 30, the second light-emitting unit 40, and the second electrode 50 can form an independent and complete light-emitting element. In other words, the stacked first electrode 10, the first light-emitting unit 20, the charge generation stack 30, the second light-emitting unit 40, and the second electrode 50 can form a light-emitting device O having two independent and complete light-emitting units.

[0149] One of the first electrode 10 and the second electrode 50 may be an anode of the light-emitting device O, and the other of the first electrode 10 and the second electrode 50 may be a cathode of the light-emitting device O.

[0150] The following description will be made by taking the case where the first electrode 10 is the anode of the light emitting device O and the second electrode 50 is the cathode of the light emitting device O as an example:

[0151] In some examples, the first electrode 10 may be the anode of the light-emitting device O. In this case, the carriers provided by the first electrode 10 may be holes. The first electrode 10 may be made of a metal material, such as any one or more of magnesium (Mg), silver (Ag), copper (Cu), aluminum (Al), titanium (Ti), and molybdenum (Mo), or an alloy material of the above metals, such as aluminum-neodymium alloy (AlNd) or molybdenum-niobium alloy (MoNb). It may be a single-layer structure, or a multi-layer composite structure, such as Ti / Al / Ti, or a stack structure formed by a metal and a transparent conductive material, such as reflective materials such as ITO / Ag / ITO, Mo / AlNd / ITO, etc. However, the embodiments of the present disclosure are not limited thereto.

[0152] In some examples, the second electrode 50 is the cathode of the light-emitting device O. In this case, the carriers provided by the second electrode 50 may be electrons. The material of the second electrode 50, the second electrode 132, may be any one or more of magnesium (Mg), silver (Ag), and aluminum (Al), or an alloy made of any one or more of the above metals, or a transparent conductive material, such as indium tin oxide (ITO), or a multilayer composite structure of a metal and a transparent conductive material.

[0153] In other examples, the second electrode 50 is taken as an example of a double-layer composite structure. The second electrode 50 includes a first metal layer and a second metal layer. The first metal layer can be located on the side of the second metal layer away from the first electrode 10. That is, the second metal layer is located on the side of the first metal layer close to the second light-emitting unit 40. Among them, the material of the first metal layer can include two metal materials, magnesium (Mg) and silver (Ag). The material of the second metal layer can be ytterbium (Yb). A second metal layer is provided on the side of the first metal layer close to the second light-emitting unit 40, and the second metal layer can be used to reduce the potential barrier between the first metal layer and the second light-emitting unit 40, so that the electrons provided by the second electrode 50 are transferred to the second light-emitting unit 40.

[0154] Exemplarily, the ratio of the mass of magnesium (Mg) to the mass of silver (Ag) in the first metal layer ranges from 1:9 to 1:20.

[0155] For example, the thickness of the second electrode 50 ranges from

[0156] For example, the thickness of the first metal layer ranges from

[0157] For example, the thickness of the second metal layer ranges from

[0158] Based on this, the above-mentioned limitations on the material, thickness, and other conditions of the metal layer in the second electrode 50 can enable the second electrode 50 to have better electrical conductivity. However, the embodiments of the present disclosure are not limited thereto.

[0159] For a single light emitting device O, the first light emitting unit 20 and the second light emitting unit 40 emit the same color of light. For example, if the light emitting device O emits red light, the first light emitting unit 20 and the second light emitting unit 40 in the light emitting device O both emit red light.

[0160] The charge generation stack 30 is configured to generate, transport, and inject carriers under the electric field of the first electrode 10 and the second electrode 50. Carriers may include electrons and holes. For example, under the electric field of the first electrode 10 and the second electrode 50, the charge generation stack 30 generates holes that move toward the second electrode 50 and electrons that move toward the first electrode 10.

[0161] For example, a voltage is applied to the first electrode 10 and the second electrode 50, and an electric field is formed between the first electrode 10 and the second electrode 50. Under the action of the electric field of the first electrode 10 and the second electrode 50, the first electrode 10 generates holes approaching the first light-emitting unit 20, the second electrode 50 generates electrons approaching the second light-emitting unit 40, and the electrons approaching the first light-emitting unit 20 and the holes approaching the second light-emitting unit 40 are generated by the charge generation stack 30.

[0162] Based on this, the electrons generated by the charge generation stack 30 and the holes generated by the first electrode 10 will both move to the first light-emitting unit 20 and recombine into excitons in the first light-emitting unit 20, causing the first light-emitting unit 20 to emit light. In addition, the holes generated by the charge generation stack 30 and the electrons generated by the second electrode 50 will both move to the second light-emitting unit 40 and recombine into excitons in the second light-emitting unit 40, causing the second light-emitting unit 40 to emit light. This achieves the light-emitting device O with a double-layer EL (Tandem EL) design.

[0163] As shown in Figures 11 to 13 , in some examples, when testing the spectra of the red, green, and blue light-emitting devices (R, G, and B) within the display substrate 100 corresponding to an RGB screen, it can be observed that the proportion of stray peaks in the emission spectrum corresponding to the light emitted by the light-emitting device O in at least some of the sub-pixels P within the display substrate 100 is less than or equal to 5%. In other words, without adding isolation pillars to the display substrate 100, the proportion of stray peaks in the light emitted by the light-emitting device O can be reduced by adjusting various parameters of the charge generation stack 30, so that the proportion of stray peaks in the emission spectrum corresponding to the light emitted by the light-emitting device O in at least some of the sub-pixels P within the display substrate 100 is less than or equal to 5%.

[0164] Among them, the conditions for testing the red light-emitting device (R), green light-emitting device (G) and blue light-emitting device (B) in the display substrate 100 are the same, and only the light-emitting device O to be tested is changed to facilitate the observation of the mixed peaks of the light-emitting device O emitting different light.

[0165] For example, a CS2000 device can be used for testing at room temperature to measure the spectrum of the red light emitting device (R), green light emitting device (G), and blue light emitting device (B) in the display substrate 100 corresponding to the RGB screen. However, the present disclosure is not limited thereto.

[0166] It should be noted that in the spectra corresponding to the red (R), green (G), and blue (B) light-emitting devices, if there is no crosstalk, only one main peak will appear. If there is crosstalk, other stray peaks will appear. In other words, "stray peaks" are crosstalk peaks other than the main peak in the spectrum. The proportion of stray peaks can be determined by normalizing the main peak intensity. The "stray peak proportion" mentioned below is also obtained in the same manner.

[0167] When the proportion of stray peaks in the light emitted by the light-emitting device O is equal to or close to 5%, the proportion of stray peaks in the light emitted by the light-emitting device O is relatively small. This reduces the crosstalk problem caused by a light-emitting device O of a single color emitting light to adjacent light-emitting devices O, thereby improving the color shift problem of the display substrate 100 and enhancing the display quality of the display substrate 100.

[0168] When the stray peak ratio of the light emitted by the light-emitting device O is equal to or close to 0%, the stray peak ratio of the light emitted by the light-emitting device O can be ignored. In other words, the crosstalk caused by a light-emitting device O of a certain color emitting light to adjacent light-emitting devices O can be effectively reduced, thereby preventing color shift on the display substrate 100 and improving the display quality of the display substrate 100.

[0169] In some examples, the proportion of impurity peaks in the emission peak corresponding to the light emitted by the light-emitting device O in at least some sub-pixels P of the display substrate 100 is less than or equal to 4%.

[0170] When the proportion of stray peaks in the light emitted by the light-emitting device O is equal to or close to 4%, the proportion of stray peaks in the light emitted by the light-emitting device O can be made even smaller. In other words, the crosstalk caused by a single light-emitting device O emitting a certain color to adjacent light-emitting devices O can be effectively reduced. This effectively reduces the color shift problem of the display substrate 100 and improves the display quality of the display substrate 100.

[0171] Exemplarily, the impurity peak of the emission peak in the luminescence spectrum corresponding to the light emitted by the light-emitting device O in at least some sub-pixels P accounts for approximately any one of 0%, 0.5%, 1%, 1.5%, 2%, 2.5%, 3%, 3.5% or 4%.

[0172] It should be noted that “at least some sub-pixels P” may include the following situations:

[0173] The first type is that the proportion of impurity peaks in the emission peak of the luminescence spectrum corresponding to the light emitted by some sub-pixels P is less than or equal to 5%. The "some sub-pixels P" include at least one of a sub-pixel P with a light-emitting device that emits red light, a sub-pixel P with a light-emitting device that emits green light, and a sub-pixel P with a light-emitting device that emits blue light.

[0174] The second type is that the proportion of impurity peaks in the emission spectrum corresponding to the light emitted by all sub-pixels P is less than or equal to 5%. That is, the proportion of impurity peaks in the emission spectrum corresponding to the light emitted by the light-emitting device O in any sub-pixel P in the display substrate 100 is less than or equal to 5%.

[0175] Based on this, the crosstalk problem of a light emitting device O of a single color emitting light to adjacent light emitting devices O can be effectively reduced, thereby preventing the display substrate 100 from having color deviation and improving the display quality of the display substrate 100.

[0176] Specifically, as shown in conjunction with Figures 8 and 11 , Figures 9 and 12 , or any combination of Figures 10 and 13 , the display substrate 100 provided by the embodiments of the present disclosure is configured to have a stray peak ratio of less than or equal to 5% for the light emitted by the light-emitting device O. In other words, a similar technical effect as that achieved by using isolation columns can be achieved without the need for additional isolation columns. This can reduce crosstalk from a single light-emitting device O of a particular color to adjacent light-emitting devices O, improve color shift issues on the display substrate 100, and enhance the display quality of the display substrate 100.

[0177] In summary, the display substrate 100 provided in the embodiment of the present disclosure can set the proportion of the stray peak of the light emitted by the light-emitting device O to be less than or equal to 5% without increasing the process and cost, thereby reducing the crosstalk to the adjacent light-emitting devices O when a light-emitting device O of a single color emits light, improving the color deviation problem of the display substrate 100, and improving the display quality of the display substrate 100.

[0178] In some embodiments, continuing with Figures 4 and 11 to 13, when the grayscale of the light-emitting device O in the sub-pixel P is higher than the threshold grayscale, the proportion of the stray peak in the emission peak in the luminescence spectrum corresponding to the light emitted by the light-emitting device O in at least some of the sub-pixels P is approximately 0%.

[0179] In some examples, the threshold grayscale can be grayscale 128. For example, grayscales 0 to 128 are low grayscales, while grayscales 129 to 255 are high grayscales. However, the disclosed embodiments are not limited thereto. The following description uses a grayscale threshold of 128 as an example.

[0180] When the grayscale of the light-emitting device O in the sub-pixel P is higher than the threshold grayscale, the light-emitting device O in the sub-pixel P is in a high grayscale state.

[0181] Taking 255 grayscale as an example, the brightness of the first subpixel P1 (red) can be 300 lumens / nit, the brightness of the second subpixel P2 (green) can be 1000 lumens / nit, and the brightness of the third subpixel P3 (blue) can be 100 lumens / nit. In this article, 255 grayscale is described using the above brightness as an example.

[0182] Among the light-emitting device O in the first sub-pixel P1 (red), the light-emitting device O in the second sub-pixel P2 (green), and the light-emitting device O in the third sub-pixel P3 (blue), the proportion of the noise peak generated by the light-emitting device O in one sub-pixel P being affected by the light-emitting devices O in the other two sub-pixels P is approximately 0%.

[0183] Based on this, when the grayscale of the display substrate 100 is higher than the threshold grayscale, that is, when the display substrate 100 is in a high grayscale state, the proportion of stray peaks in the emission peak in the luminescence spectrum corresponding to the light emitted by the light-emitting device O in at least some sub-pixels P is approximately 0%, which is equivalent to removing the stray light of the light emitted by the light-emitting device O in at least some sub-pixels P, which can effectively improve the color deviation problem of the display substrate 100 and thereby improve the display quality of the display substrate 100.

[0184] It should be noted that due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the impurity peak ratio fluctuates within the range of ±0.5%, it can also be considered that the impurity peak ratio meets the qualification condition of being equal to 0%. In addition, in other examples, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the impurity peak ratio fluctuates within the range of ±0.3%, it can also be considered that the impurity peak ratio meets the qualification condition of being equal to 0%.

[0185] In some embodiments, continuing with reference to Figures 4 and 11 to 13, when the grayscale of the light-emitting device O in the sub-pixel P is lower than the threshold grayscale, the proportion of the stray peak in the emission peak in the luminescence spectrum corresponding to the light emitted by the light-emitting device O in at least some of the sub-pixels P is less than or equal to 4%.

[0186] When the grayscale of the light-emitting device O in the sub-pixel P is lower than the threshold grayscale, the light-emitting device O in the sub-pixel P is in a low grayscale state.

[0187] For example, the brightness of the first sub-pixel P1 (red) can be 0.1 lumens / nit, the brightness of the second sub-pixel P2 (green) can be 0.4 lumens / nit, and the brightness of the third sub-pixel P3 (blue) can be 0.06 lumens / nit. The eight grayscale levels described herein are described using the brightness levels above as an example.

[0188] Among the light-emitting device O in the first sub-pixel P1 (red), the light-emitting device O in the second sub-pixel P2 (green), and the light-emitting device O in the third sub-pixel P3 (blue):

[0189] The proportion of the noise peak generated by the light emitting device O in the first sub-pixel P1 (red) being affected by the light emitting device O in the second sub-pixel P2 (green) and the light emitting device O in the third sub-pixel P3 (blue) is approximately 0%.

[0190] The proportion of the noise peak generated by the light emitting device O in the second sub-pixel P2 (green) affected by the light emitting device O in the first sub-pixel P1 (red) and the light emitting device O in the third sub-pixel P3 (blue) is approximately 0%.

[0191] The proportion of the noise peak generated by the light-emitting device O in the third sub-pixel P3 (blue) due to the influence of the light-emitting device O in the first sub-pixel P1 (red) is less than or equal to 4%. The proportion of the noise peak generated by the light-emitting device O in the third sub-pixel P3 (blue) due to the influence of the light-emitting device O in the second sub-pixel P2 (green) is less than or equal to 3%.

[0192] Based on this, when the grayscale of the display substrate 100 is lower than the threshold grayscale, that is, when the display substrate 100 is in a low grayscale state, the proportion of the stray peak in the emission peak corresponding to the light emitted by the light-emitting device O in at least some sub-pixels P is less than or equal to 4%, and the proportion of the stray peak in the light emitted by the light-emitting device O is relatively small. This reduces the problem of crosstalk between adjacent light-emitting devices O when a light-emitting device O emits light of a certain color, thereby improving the color cast problem of the display substrate 100 and enhancing the display quality of the display substrate 100.

[0193] The following will describe, with reference to the relevant drawings, which parameters of the charge generation stack 30 are adjusted to reduce the proportion of the stray peaks in the light emitted by the light-emitting device O and improve the color shift problem of the display substrate 100 .

[0194] In some embodiments, as shown in FIG. 4 and FIG. 11 to FIG. 13 , the lateral resistance of the charge generation stack 30 is greater than or equal to 100 GΩ / μm. 2 This can effectively suppress the lateral transmission of holes and electrons in the charge generation stack 30 to the adjacent light-emitting device O, so that the proportion of the impurity peak in the emission peak corresponding to the luminescence spectrum of the light emitted by the light-emitting device O is less than or equal to 5%, which is beneficial to improving the color shift problem of the display substrate 100 and improving the display quality of the display substrate 100.

[0195] When the lateral resistance of the charge generation stack 30 is equal to or close to 100 GΩ / μm 2When the charge generation stack 30 has a large lateral resistance, it can effectively suppress the lateral transmission of holes and electrons in the charge generation stack 30 to the adjacent light-emitting device O, thereby preventing the problem of color crosstalk between adjacent light-emitting devices O in the display substrate 100 and improving the color deviation of the display substrate 100.

[0196] In some examples, the lateral resistance of the charge generation stack 30 is greater than or equal to 120 GΩ / μm. 2 When the lateral resistance of the charge generation stack 30 is equal to or close to 120GΩ / μm 2 When the charge generation stack 30 is connected to the display substrate 100, the lateral resistance of the charge generation stack 30 can be made larger, which can better inhibit the lateral transmission of holes and electrons in the charge generation stack 30 to the adjacent light-emitting device O, thereby better improving the problem of color crosstalk between adjacent light-emitting devices O, improving the color deviation of the display substrate 100, and improving the display quality of the display substrate 100.

[0197] It is understood that in other examples, the lateral resistance of the charge generation stack 30 is greater than or equal to 150 GΩ / μm. 2 Alternatively, in some other embodiments, the lateral resistance of the charge generation stack 30 is greater than or equal to 200 GΩ / μm. 2 However, this disclosure does not limit this. Since the greater the lateral resistance of the charge generation stack 30, the better the suppression effect on the lateral transport of holes and electrons in the charge generation stack 30, based on this, the greater the lateral resistance of the charge generation stack 30, the more obvious the effect of improving the color shift of the display substrate 100.

[0198] For example, the "transverse resistance of the charge generation stack 30" can be obtained by measuring the IV curve between two electrodes (the first electrode 10 and the second electrode 50) at a distance of 10 μm to 100 μm using IVL equipment, and then calculating the transverse resistance (voltage divided by current). Furthermore, "transverse resistance" will be obtained in the above manner. However, the method for measuring the transverse resistance of the charge generation stack 30 in the disclosed embodiments is not limited to this method.

[0199] In some embodiments, as shown in FIG. 4 and FIG. 11 to FIG. 13 , the lateral resistance of the charge generation stack 30 is less than or equal to 260 GΩ / μm. 2 .

[0200] The material, doping and other conditions of the charge generation stack 30 need to be adjusted. The lateral resistance of the charge generation stack 30 is relatively large, but this will also affect other characteristics of the charge generation stack 30 and even affect the life of the formed light-emitting device O. Based on this, it is necessary to limit the lateral resistance of the charge generation stack 30 to less than or equal to 260GΩ / μm. 2To prevent the charge generation stack 30 from affecting the life of the light emitting device O and affecting the quality of the display substrate 100.

[0201] When the lateral resistance of the charge generation stack 30 is equal to or close to 260 GΩ / μm 2 When the charge generation stack 30 is configured as a plurality of layers, the lateral resistance of the charge generation stack 30 can be increased without affecting the lifespan and performance of the final light-emitting device O. The lateral resistance of the charge generation stack 30 can be used to suppress the lateral transmission of holes and electrons within the charge generation stack 30 to adjacent light-emitting devices O, thereby alleviating the problem of color crosstalk between adjacent light-emitting devices O, improving the color shift of the display substrate 100, and enhancing the display quality of the display substrate 100.

[0202] In some examples, the lateral resistance of the charge generation stack 30 is less than or equal to 230 GΩ / μm. 2 When the lateral resistance of the charge generation stack 30 is equal to or close to 230GΩ / μm 2 When the charge generation stack 30 is formed, the lateral resistance value can be made smaller, thereby further preventing the problem of affecting the life of the formed light-emitting device O.

[0203] It is understood that in other examples, the lateral resistance of the charge generation stack 30 is less than or equal to 210 GΩ / μm. 2 However, the embodiments of the present disclosure are not limited thereto.

[0204] In some embodiments, as shown in FIG. 4 and FIG. 11 to FIG. 13 , the lateral resistance value of the charge generation stack 30 is in the range of 100 GΩ / μm. 2 ~260GΩ / μm 2 The lateral resistance of the charge generation stack 30 can effectively inhibit the lateral transmission of holes and electrons in the charge generation stack 30 to the adjacent light-emitting device O, thereby better improving the color shift problem of the display substrate 100, and can also prevent the required lateral resistance of the charge generation stack 30 from being too large, thereby affecting the life of the formed light-emitting device O.

[0205] In other examples, the lateral resistance of the charge generation stack 30 is in the range of 124 GΩ / μm. 2 ~254GΩ / μm 2 In some other examples, the lateral resistance of the charge generation stack 30 is in the range of 113 GΩ / μm. 2 ~231GΩ / μm 2 However, the embodiments of the present disclosure are not limited thereto.

[0206] For example, the lateral resistance of the charge generation stack 30 is about 100 GΩ / μm. 2、150GΩ / μm 2 , 200GΩ / μm 2 , 250GΩ / μm 2 or 260GΩ / μm 2 However, the embodiments of the present disclosure are not limited thereto.

[0207] It should be noted that the lateral resistance of the charge generation stack 30 is approximately 260 GΩ / μm. 2 For example, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), the error range of the lateral resistance value of the charge generation stack 30 is 10%×260GΩ / μm. 2 When the charge generation stack 30 floats within the range of 260GΩ / μm, the lateral resistance value of the charge generation stack 30 can also be considered to be equal to 260GΩ / μm. 2 .

[0208] In addition, in other examples, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), the error range of the lateral resistance value of the charge generation stack 30 is 5%×260GΩ / μm. 2 When the charge generation stack 30 floats within the range of 260GΩ / μm, the lateral resistance value of the charge generation stack 30 can also be considered to be equal to 260GΩ / μm. 2 .

[0209] FIG. 14 is a structural diagram of a light emitting device according to some other embodiments.

[0210] In some embodiments, as shown in FIG14 , the charge generation stack 30 includes an n-type charge generation layer 31 and a p-type charge generation layer 32, wherein the p-type charge generation layer 32 is located on a side of the n-type charge generation layer 31 away from the first electrode 10. The charge generation stack 30 is configured such that the n-type charge generation layer 31 transfers electrons to the first light-emitting unit 20, and the p-type charge generation layer 32 transfers holes to the second light-emitting unit 40.

[0211] The n-type charge generation layer 31 and the p-type charge generation layer 32 can form a PN junction, forming a space charge region at the interface between the n-type charge generation layer 31 and the p-type charge generation layer 32 to generate holes and electrons. This, in conjunction with the first electrode 10 and the second electrode 50, enables the light-emitting device O to emit light.

[0212] In some examples, the n-type charge generation layer 31 includes a first n-type charge generation layer and a second n-type charge generation layer, wherein the lateral resistance of the first n-type charge generation layer is greater than the lateral resistance of the second n-type charge generation layer.

[0213] When the n-type charge generation layer 31 is the first n-type charge generation layer, the charge generation layer 31 formed by the first n-type charge generation layer and the p-type charge generation layer can make the lateral resistance value of the charge generation stack 30 in the range of 100 GΩ / μm. 2 ~260GΩ / μm 2 The charge generation stack 30 can effectively inhibit the holes and electrons in the charge generation stack 30 from being transferred laterally to the adjacent light emitting device O, thereby improving the color shift problem of the display substrate 100 and preventing the life of the light emitting device O from being affected.

[0214] In some examples, n-type charge generation layer 31 includes a first n-type charge generation layer and a second n-type charge generation layer. The lateral resistance of the first n-type charge generation layer is greater than the lateral resistance of the second n-type charge generation layer. P-type charge generation layer 32 includes a first p-type charge generation layer and a second p-type charge generation layer. The lateral resistance of the first p-type charge generation layer is greater than the lateral resistance of the second p-type charge generation layer.

[0215] For example, when the n-type charge generation layer 31 is a first n-type charge generation layer and the p-type charge generation layer 32 is a first p-type charge generation layer, the lateral resistance of the charge generation stack 30 can be in the range of 124 GΩ / μm. 2 ~254GΩ / μm 2 .

[0216] For example, when the n-type charge generation layer 31 is a first type n-type charge generation layer and the p-type charge generation layer 32 is a second type p-type charge generation layer, the lateral resistance of the charge generation stack 30 can be in the range of 113 GΩ / μm. 2 ~231GΩ / μm 2 .

[0217] For example, when the n-type charge generation layer 31 is the second n-type charge generation layer, regardless of whether the p-type charge generation layer 32 is the first p-type charge generation layer or the second p-type charge generation layer, the lateral resistance value of the charge generation stack 30 formed by the combination thereof is in the range of 50 GΩ / μm. 2 ~130GΩ / μm 2 .

[0218] For example, when the n-type charge generation layer 31 is the second n-type charge generation layer and the p-type charge generation layer 32 is the first p-type charge generation layer, the lateral resistance of the charge generation stack 30 can be in the range of 60 GΩ / μm. 2 127 GΩ / μm 2 .

[0219] For example, when the n-type charge generation layer 31 is a second n-type charge generation layer and the p-type charge generation layer 32 is a second p-type charge generation layer, the lateral resistance of the charge generation stack 30 can be in the range of 56 GΩ / μm. 2 ~116GΩ / μm 2 .

[0220] It should be noted that the materials of the n-type charge generation layer 31 and the p-type charge generation layer 32 are not specifically limited in the embodiments of the present disclosure. The values ​​of the lateral resistance of the charge generation stack 30 formed thereon can be modified and adjusted according to actual needs to meet the limitations on the values ​​of the lateral resistance of the charge generation stack 30 in any of the above embodiments.

[0221] Based on the above statements, it can be seen from FIG11 to FIG14 that when the n-type charge generation layer 31 is made of a material with a relatively large lateral resistance, whether the p-type charge generation layer 32 is made of a material with a relatively large lateral resistance or a relatively small lateral resistance, the lateral resistance of the charge generation layer formed by the n-type charge generation layer 31 and the p-type charge generation layer 32 can be satisfied with 100 GΩ / μm. 2 ~260GΩ / μm 2 The charge generation stack 30 can effectively inhibit the lateral transmission of holes and electrons within the charge generation stack 30 to the adjacent light-emitting device O, thereby reducing the proportion of stray peaks in the light emitted by the light-emitting device O to less than or equal to 4%. This improves the color shift problem of the display substrate 100 and prevents the life of the light-emitting device O from being affected.

[0222] When the n-type charge generation layer 31 is made of a material with a relatively low lateral resistance, the p-type charge generation layer 32 can be made of a material with a relatively high lateral resistance or a relatively low lateral resistance. The lateral resistance of the charge generation stack 30 formed by the n-type charge generation layer 31 and the p-type charge generation layer 32 is in the range of 50 GΩ / μm. 2 ~130GΩ / μm 2 This will result in the lateral resistance value of the charge generation stack 30 not being completely within a good value range (100GΩ / μm 2 ~260GΩ / μm 2 ), it can suppress the lateral transmission of holes and electrons in the charge generation stack 30 to a certain extent, but it cannot completely improve the color deviation problem of the display substrate 100.

[0223] In order to further improve the color shift problem of the display substrate 100, other parameters of the charge generation stack 30 may be further adjusted to further improve the color shift problem of the display substrate 100. First, the thickness of the charge generation layer may be improved.

[0224] Because the n-type charge generation layer 31 is located close to one side of the p-type charge generation layer 32, the n-type charge generation layer 31 in the first electrode 10, the first light-emitting unit 20, and the charge generation stack 30 can form an independent light-emitting element. The n-type charge generation layer 31 is used to generate electrons that move toward the first light-emitting unit 20, and the first electrode is used to generate holes that move toward the first light-emitting unit 20.

[0225] Research has found that holes move faster than electrons, which can lead to accumulation of faster-moving holes and lateral movement.

[0226] Based on the above problem, in some embodiments, as shown in FIG14 , the minimum distance between the side of the n-type charge generation layer 31 close to the p-type charge generation layer 32 and the first light-emitting unit 20 can be set to be smaller than the minimum distance between the side of the first electrode 10 away from the first light-emitting unit 20 and the first light-emitting unit 20.

[0227] That is, the transmission path of electrons generated in the n-type charge generation layer 31 is set to be shorter than the transmission path of electrons generated in the first electrode 10. The electron transmission path can be shortened to compensate for the fact that the electron movement rate is slower than the hole movement rate.

[0228] Based on this, the electrons generated by the n-type charge generation layer 31 and the holes generated by the first electrode 10 can be recombined in time in the first light-emitting unit 20 to form excitons, so as to prevent the problem of lateral crosstalk caused by hole accumulation, which is beneficial to improving the display quality of the display substrate 100.

[0229] In some embodiments, as shown in FIG. 14 , the thickness of the n-type charge generation layer 31 in the charge generation stack 30 ranges from

[0230] The thickness of the n-type charge generation layer 31 is equal to or When the n-type charge generation layer 31 is connected to the first light-emitting unit 20, the transmission path of the electrons generated in the n-type charge generation layer 31 can be shortened, thereby shortening the time required for the electrons generated in the n-type charge generation layer 31 to be transmitted to the first light-emitting unit 20, thereby compensating for the fact that the mobility of the electrons is less than the mobility of the holes, and allowing the electrons generated in the n-type charge generation layer 31 and the holes generated in the first electrode 10 to be recombined in time to form excitons in the first light-emitting unit 20, thereby preventing the problem of lateral crosstalk caused by hole accumulation, which is beneficial to improving the display quality of the display substrate 100. In addition, the thickness of the n-type charge generation layer 31 is equal to or greater than When the thickness of the n-type charge generation layer 31 is too thin, the problem of affecting the cavity effect of the light-emitting device O can also be prevented.

[0231] The thickness of the n-type charge generation layer 31 is equal to or When the thickness of the n-type charge generation layer 31 is too thin, which may affect the cavity effect of the light-emitting device O, the transmission path of the electrons generated in the n-type charge generation layer 31 may be shortened to prevent the accumulation of holes and cause lateral crosstalk.

[0232] Figure 15 shows a spectrum of red light-emitting devices according to other embodiments, Figure 16 shows a spectrum of green light-emitting devices according to other embodiments, and Figure 17 shows a spectrum of blue light-emitting devices according to other embodiments. Figures 15-17 illustrate an example in which the grayscale of the light-emitting device O in the substrate 100 is a high grayscale (e.g., grayscale 255) and the n-type charge generation layer 31 is a second type n-type charge generation layer.

[0233] In some examples, as shown in FIG4 and FIG15 to FIG17, when the n-type charge generation layer 31 is the second type n-type charge generation layer, the improvement effect on the color shift of the display substrate 100 is not as good as when the n-type charge generation layer 31 is the first type n-type charge generation layer. Based on this, the example of the n-type charge generation layer 31 being the second type n-type charge generation layer is first introduced. On this basis, the thickness of the second n-type charge generation layer is adjusted to conduct experiments. Specifically, the thickness of the second n-type charge generation layer is shown as follows: and Spectrum diagram of the case.

[0234] 15 to 17, it can be seen that the thickness of the second n-type charge generation layer ranges from This can reduce the proportion of stray peaks in the light emitted by the light-emitting device O, thereby improving the color shift problem of the display substrate 100. Furthermore, as shown in Figures 15 to 17 , regardless of the color of light emitted by the light-emitting device O, the smaller the thickness of the second n-type charge generation layer, the smaller the proportion of stray peaks in the light emitted by the light-emitting device O, which in turn improves the color shift of the display substrate 100.

[0235] Figure 18 is a spectrum diagram of a red light-emitting device according to further embodiments, Figure 19 is a spectrum diagram of a green light-emitting device according to further embodiments, and Figure 20 is a spectrum diagram of a blue light-emitting device according to further embodiments. Figures 15 to 17 illustrate an example in which the grayscale of the light-emitting device O in the substrate 100 is a high grayscale (e.g., grayscale 255) and the n-type charge generation layer 31 is a first type n-type charge generation layer.

[0236] In other examples, in combination with the spectrum diagrams shown in FIG4 and FIG18 to FIG20 , the difference from the spectrum diagrams shown in FIG15 to FIG17 is that the n-type charge generation layer 31 in the light-emitting device O is the first n-type charge generation layer.

[0237] Combined with the spectral graphs shown in Figures 18 to 20 and the spectral graphs shown in Figures 15 to 17, first of all, it can be clearly seen that when the n-type charge generation layer 31 in the light-emitting device O is the first n-type charge generation layer, the proportion of the stray peaks of the light emitted by the light-emitting device O is smaller than when the n-type charge generation layer 31 in the light-emitting device O is the second n-type charge generation layer, and the effect of improving the color deviation of the display substrate 100 is better.

[0238] Secondly, in conjunction with the spectra shown in Figures 18 to 20, on the basis that the n-type charge generation layer 31 in the light-emitting device O is the first n-type charge generation layer, the thickness of the first n-type charge generation layer is adjusted to verify the effect of the first n-type charge generation layer of different thicknesses on the stray peak of the light emitted by the light-emitting device O. Specifically, the thickness of one n-type charge generation layer is respectively and

[0239] 18 to 20, it can be seen that the thickness of the first n-type charge generation layer ranges from The ratio of the stray peaks in the light emitted by the light emitting device O can be reduced, thereby improving the color shift problem of the display substrate 100.

[0240] Specifically, as shown in FIG18 , the light-emitting device O in the first sub-pixel P1 (red) is affected by the light-emitting device O in the second sub-pixel P2 (green) and the light-emitting device O in the third sub-pixel P3 (blue), and the proportion of the noise peak generated is approximately 0%.

[0241] 19 , the proportion of the noise peak generated by the light-emitting device O in the second sub-pixel P2 (green) affected by the light-emitting device O in the first sub-pixel P1 (red) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%.

[0242] As shown in FIG20 , the proportion of the noise peak generated by the light-emitting device O in the third sub-pixel P3 (blue) affected by the light-emitting device O in the first sub-pixel P1 (red) and the light-emitting device O in the second sub-pixel P2 (green) is approximately 0%.

[0243] In summary, among the light-emitting device O in the first sub-pixel P1 (red), the light-emitting device O in the second sub-pixel P2 (green), and the light-emitting device O in the third sub-pixel P3 (blue), the proportion of spurious peaks generated by the light-emitting device O in one sub-pixel P being affected by the light-emitting devices O in the other two sub-pixels P is approximately 0%. In other words, regardless of the color of light emitted by the light-emitting device O, the smaller the thickness of the first n-type charge generation layer, the smaller the proportion of spurious peaks in the light emitted by the light-emitting device O, which in turn improves the color shift of the display substrate 100.

[0244] Figure 21 is a spectrum diagram of a red light-emitting device according to some further embodiments, Figure 22 is a spectrum diagram of a green light-emitting device according to some further embodiments, and Figure 23 is a spectrum diagram of a blue light-emitting device according to some further embodiments. The spectrum diagrams shown in Figures 21 to 23 differ from the spectrum diagrams shown in Figures 18 to 20 in that:

[0245] Because the color shift phenomenon of the display substrate 100 is more obvious in a low grayscale state than in a high grayscale state, further experiments were conducted based on Figures 18 to 20 by changing only the grayscale of the light-emitting device O. Specifically, the grayscale of the light-emitting device O in the display substrate 100 is low (e.g., grayscale 8) as an example.

[0246] 21 to 23, it can be seen that in the low grayscale state, the thickness of the first n-type charge generation layer ranges from The ratio of the stray peaks in the light emitted by the light emitting device O can be reduced, thereby improving the color deviation problem of the display substrate 100.

[0247] Specifically, as shown in FIG21 , the light-emitting device O in the first sub-pixel P1 (red) is affected by the light-emitting device O in the second sub-pixel P2 (green) and the light-emitting device O in the third sub-pixel P3 (blue), and the proportion of the noise peak generated is approximately 0%.

[0248] As shown in FIG22 , the light emitting device O in the second sub-pixel P2 (green) is affected by the light emitting device O in the first sub-pixel P1 (red) and the light emitting device O in the third sub-pixel P3 (blue), and the proportion of the noise peak generated is approximately 0%.

[0249] As shown in FIG23 , the proportion of the noise peak generated by the light-emitting device O in the third sub-pixel P3 (blue) due to the influence of the light-emitting device O in the first sub-pixel P1 (red) is less than or equal to 3%. The proportion of the noise peak generated by the light-emitting device O in the third sub-pixel P3 (blue) due to the influence of the light-emitting device O in the second sub-pixel P2 (green) is less than or equal to 2.5%.

[0250] In summary, in the low grayscale state, the stray peaks of the red and green light-emitting devices O are essentially eliminated, while the blue light-emitting device O still has a certain degree of stray peaks. However, the proportion of stray peaks in the light emitted by the blue light-emitting device O can be reduced to less than 4%, which can also improve the color shift problem of the display substrate 100.

[0251] Furthermore, the thickness of the first n-type charge generation layer ranges from Regardless of the color of light emitted, the smaller the thickness of the first n-type charge generation layer in the light-emitting device O is, the smaller the proportion of the stray peak in the light emitted by the light-emitting device O is, which means that the effect of improving the color deviation of the display substrate 100 is better.

[0252] Among them, the light emitting device O emitting blue light shown in FIG. 23 is particularly obvious, and the thickness of the first n-type charge generation layer can be further adjusted to further enhance the improvement effect of the color shift of the display substrate 100 .

[0253] 18 to 23 , it can be seen that the differences in color coordinates of n-type charge generation layers with different thicknesses are relatively small at 255 grayscale and 8 grayscale, which can be beneficial for improving the color shift of the display substrate 100 .

[0254] Table 1 shows the differences in color coordinates at 255 grayscales and 8 grayscales for different thicknesses of the n-type charge generation layer.

[0255] The red and green light emitting devices O are both differences on the X axis (the X coordinate axis in the color coordinates), and the blue light emitting device O is the difference on the Y axis (the Y coordinate axis in the color coordinates).

[0256] In some embodiments, as shown in FIG. 14 to FIG. 23 , the thickness of the n-type charge generation layer 31 in the charge generation stack 30 ranges from

[0257] The thickness of the n-type charge generation layer 31 is equal to or When the n-type charge generation layer 31 is connected to the first light-emitting unit 20, the transmission path of the electrons generated in the n-type charge generation layer 31 can be shortened, thereby shortening the time required for the electrons generated in the n-type charge generation layer 31 to be transmitted to the first light-emitting unit 20, thereby compensating for the fact that the mobility of the electrons is less than the mobility of the holes, and allowing the electrons generated in the n-type charge generation layer 31 and the holes generated in the first electrode 10 to be recombined in time to form excitons in the first light-emitting unit 20, thereby preventing the problem of lateral crosstalk caused by hole accumulation, which is beneficial to improving the display quality of the display substrate 100. In addition, the thickness of the n-type charge generation layer 31 is equal to or greater than When the thickness of the n-type charge generation layer 31 is too thin, the problem of affecting the cavity effect of the light-emitting device O can also be prevented.

[0258] The thickness of the n-type charge generation layer 31 is equal to or When the thickness of the n-type charge generation layer 31 is too thin, the problem of the cavity effect of the light-emitting device O may be better prevented, and the transmission path of the electrons generated in the n-type charge generation layer 31 may be shortened to prevent the accumulation of holes and the problem of lateral crosstalk.

[0259] In some embodiments, as shown in FIG. 14 to FIG. 23 , the thickness of the n-type charge generation layer 31 is approximately It can make the thickness of the n-type charge generation layer 31 thinner, shorten the transmission path of the electrons generated in the n-type charge generation layer 31, and prevent the problem of lateral crosstalk caused by hole accumulation; it can also prevent the thickness of the n-type charge generation layer 31 from being too thin, which may affect the cavity effect of the light-emitting device O.

[0260] It is understood that in other embodiments, the thickness of the n-type charge generation layer 31 is approximately or The embodiments of the present disclosure are not limited thereto.

[0261] It should be noted that the thickness of the n-type charge generation layer 31 is approximately For example, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), the thickness error of the n-type charge generation layer 31 fluctuates within a range of When the thickness of the n-type charge generation layer 31 is equal to

[0262] In addition, in other examples, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), the error floating range of the thickness of the n-type charge generation layer 31 is When the thickness of the n-type charge generation layer 31 is equal to

[0263] The above description, combined with the relevant figures, first describes that "other parameters" can include the thickness of the n-type charge generation layer in the charge generation stack 30, thereby adjusting the thickness of the n-type charge generation layer to improve the color shift reduction effect of the display substrate 100. The following description focuses on the "other parameters" that can also include the doping concentration of the charge generation layer, specifically describing how to improve the doping concentration of the charge generation layer to improve the color shift reduction effect of the display substrate 100.

[0264] In some embodiments, as shown in FIG14 , the n-type charge generation layer 31 in the charge generation stack 30 of the light-emitting device O is doped with a first impurity. Doping the n-type charge generation layer 31 with the first impurity can improve electron mobility in the n-type charge generation layer 31, thereby facilitating the formation of a PN junction (charge generation stack 30) between the n-type charge generation layer 31 and the p-type charge generation layer 32. The charge generation stack 30 thus formed can better generate electrons that migrate toward the first light-emitting unit 20 and holes that migrate toward the second light-emitting unit 40.

[0265] In some examples, the first impurity may be ytterbium (Yb). However, the present disclosure is not limited thereto.

[0266] In some examples, the doping concentration of the first impurity in the n-type charge generation layer 31 ranges from 0.5% to 2%.

[0267] When the doping concentration of the first impurity in the n-type charge generation layer 31 is equal to or close to 0.5%, the doping concentration of the p-type charge generation layer 32 is correspondingly adjusted to ensure a good concentration difference between the n-type charge generation layer 31 and the p-type charge generation layer 32, thereby allowing electrons and holes in the n-type charge generation layer 31 and the p-type charge generation layer 32 to move. Furthermore, electrons generated in the n-type charge generation layer 31 can be moved toward the first light-emitting unit 20, and electrons generated in the p-type charge generation layer 32 can be moved toward the second light-emitting unit 40, thereby preventing the accumulation of holes and electrons in the charge generation stack 30 formed by the n-type charge generation layer 31 and the p-type charge generation layer 32, thereby preventing the occurrence of lateral transmission problems and color crosstalk between adjacent light-emitting devices O, thereby improving the color shift of the display substrate 100 and improving the display quality of the display substrate 100.

[0268] When the doping concentration of the first impurity in the n-type charge generation layer 31 is equal to or close to 2%, the doping concentration of the p-type charge generation layer 32 is correspondingly adjusted to ensure a good concentration difference between the n-type charge generation layer 31 and the p-type charge generation layer 32, thereby enabling electrons and holes in the n-type charge generation layer 31 and the p-type charge generation layer 32 to move. Furthermore, electrons generated in the n-type charge generation layer 31 can be moved toward the first light-emitting unit 20, and electrons generated in the p-type charge generation layer 32 can be moved toward the second light-emitting unit 40, thereby preventing the accumulation of holes and electrons in the charge generation stack 30 formed by the n-type charge generation layer 31 and the p-type charge generation layer 32, thereby preventing the problem of lateral transmission and color crosstalk between adjacent light-emitting devices O, thereby improving the color shift of the display substrate 100 and enhancing the display quality of the display substrate 100.

[0269] It should be noted that how to adjust the doping concentration of the p-type charge generation layer 32 will be described below with reference to the accompanying drawings.

[0270] In some embodiments, as shown in FIG14 , the p-type charge generation layer 32 in the charge generation stack 30 of the light-emitting device O is doped with a second impurity. Doping the p-type charge generation layer 32 with the second impurity can improve the hole mobility in the p-type charge generation layer 32, thereby facilitating the formation of a PN junction (charge generation stack 30) between the p-type charge generation layer 32 and the n-type charge generation layer 31. The charge generation stack 30 thus formed can better generate electrons that migrate toward the first light-emitting unit 20 and holes that migrate toward the second light-emitting unit 40.

[0271] In some examples, the second impurity may be an organic substance. However, the present disclosure is not limited thereto. Any organic substance that can improve the hole mobility in the charge generation layer 32 may be used as the second impurity.

[0272] In some examples, the doping concentration of the second impurity in the p-type charge generation layer 32 ranges from 5% to 15%.

[0273] When the doping concentration of the second impurity in the p-type charge generation layer 32 is equal to or close to 5%, the doping concentration of the n-type charge generation layer 31 is correspondingly adjusted to ensure a good concentration difference between the p-type charge generation layer 32 and the n-type charge generation layer 31, thereby allowing electrons and holes in the p-type charge generation layer 32 and the n-type charge generation layer 31 to move. Furthermore, electrons generated in the p-type charge generation layer 32 can be moved toward the second light-emitting unit 40, and electrons generated in the n-type charge generation layer 31 can be moved toward the first light-emitting unit 20, thereby preventing the accumulation of holes and electrons in the charge generation stack 30 formed by the n-type charge generation layer 31 and the p-type charge generation layer 32, thereby preventing the occurrence of lateral transmission problems and color crosstalk between adjacent light-emitting devices O, thereby improving the color shift of the display substrate 100 and improving the display quality of the display substrate 100.

[0274] When the doping concentration of the second impurity in the p-type charge generation layer 32 is equal to or close to 15%, the doping concentration of the n-type charge generation layer 31 is correspondingly adjusted to ensure a good concentration difference between the p-type charge generation layer 32 and the n-type charge generation layer 31, thereby allowing electrons and holes in the p-type charge generation layer 32 and the n-type charge generation layer 31 to move. Furthermore, the electrons generated in the p-type charge generation layer 32 can be moved toward the second light-emitting unit 40, and the electrons generated in the n-type charge generation layer 31 can be moved toward the first light-emitting unit 20, thereby preventing the accumulation of holes and electrons in the charge generation stack 30 formed by the n-type charge generation layer 31 and the p-type charge generation layer 32, thereby preventing the problem of lateral transmission and color crosstalk between adjacent light-emitting devices O, thereby improving the color shift of the display substrate 100 and improving the display quality of the display substrate 100.

[0275] It should be noted that how to adjust the doping concentration of the n-type charge generation layer 31 will be described below with reference to the accompanying drawings.

[0276] FIG24 is a spectrum diagram of a red light-emitting device according to further embodiments, FIG25 is a spectrum diagram of a green light-emitting device according to further embodiments, and FIG26 is a spectrum diagram of a blue light-emitting device according to further embodiments. FIG24-26 illustrate the example of a light-emitting device O in substrate 100 having a high grayscale (e.g., grayscale 255) and an n-type charge generation layer 31 being a second type of n-type charge generation layer. FIG27 is a spectrum diagram of a red light-emitting device according to further embodiments, FIG28 is a spectrum diagram of a green light-emitting device according to further embodiments, and FIG29 is a spectrum diagram of a blue light-emitting device according to further embodiments. FIG27-29 illustrate the example of a light-emitting device O in substrate 100 having a high grayscale (e.g., grayscale 255) and an n-type charge generation layer 31 being a first type of n-type charge generation layer.

[0277] The difference between the spectral graphs shown in Figures 27 to 29 and the spectral graphs shown in Figures 24 to 26 is that the doping concentration of the second impurity in the p-type charge generation layer 32 of the light-emitting device O corresponding to the spectral graphs shown in Figures 27 to 29 is 10%, while the doping concentration of the second impurity in the p-type charge generation layer 32 of the light-emitting device O corresponding to the spectral graphs shown in Figures 24 to 26 is 5%.

[0278] In some embodiments, as shown in combination with FIG. 14 and FIG. 24 to FIG. 29 , the doping concentration of the first impurity in the n-type charge generation layer 31 is inversely correlated with the doping concentration of the second impurity in the p-type charge generation layer 32 .

[0279] The phrase "the doping concentration of the first impurity in the n-type charge generation layer 31 is inversely correlated with the doping concentration of the second impurity in the p-type charge generation layer 32" can be understood as meaning that when the doping concentration of the second impurity in the p-type charge generation layer 32 is greater than or equal to the threshold doping concentration, the lower the doping concentration of the first impurity in the n-type charge generation layer 31, the better the charge generation stack 30 formed thereby can improve the color shift problem of the display substrate 100. Conversely, when the doping concentration of the second impurity in the p-type charge generation layer 32 is less than the threshold doping concentration, the higher the doping concentration of the first impurity in the n-type charge generation layer 31, the better the charge generation stack 30 formed thereby can improve the color shift problem of the display substrate 100.

[0280] In some examples, the threshold doping concentration is approximately 10%. The following description uses the threshold doping concentration of 10% as an example:

[0281] With regard to the influence of the doping concentration of the n-type charge generation layer 31 and the doping concentration of the p-type charge generation layer 32 in the charge generation stack 30 on the impurity peak of the light emitted by the light-emitting device O, in combination with Figures 24 to 26, the doping concentration of the second impurity in the p-type charge generation layer 32 is set to be less than the threshold doping concentration, that is, the doping concentration of the second impurity in the p-type charge generation layer 32 is set to be less than 10%: the doping concentration of the first impurity in the n-type charge generation layer 31 is adjusted so that the doping concentration of the first impurity in the n-type charge generation layer 31 floats in the range of 0.5% to 2% for experiments.

[0282] Specifically, the spectra are shown when the doping concentration of the second impurity in the p-type charge generation layer 32 is about 5% and the doping concentration of the first impurity in the n-type charge generation layer 31 is about 0.5%, 1% and 2%.

[0283] As shown in Figures 24 to 26 , when the doping concentration of the second impurity in the p-type charge generation layer 32 is approximately 5%, the doping concentration of the first impurity in the n-type charge generation layer 31 ranges from 0.5% to 2%. When the doping concentration is 0.5%, 1%, and 2%, the corresponding proportion of the impurity peak in the light emitted by the light-emitting device O decreases. That is, when the doping concentration of the second impurity in the p-type charge generation layer 32 is less than the threshold doping concentration, a higher doping concentration of the first impurity in the n-type charge generation layer 31 can reduce the proportion of the impurity peak in the light emitted by the light-emitting device O, thereby better addressing the color shift problem of the display substrate 100.

[0284] 24 to 26 , regardless of the color of light emitted by the light-emitting device O: when the doping concentration of the second impurity in the p-type charge generation layer 32 is less than the threshold doping concentration, the higher the doping concentration of the first impurity in the n-type charge generation layer 31 is set, the better the proportion of impurity peaks in the light-emitting device O can be reduced, so as to better solve the problem of color deviation of the display substrate 100.

[0285] In summary, when the doping concentration of the first impurity in the n-type charge generation layer 31 is within the range of 0.5% to 2%, and the doping concentration of the second impurity in the p-type charge generation layer 32 is within the range of 5% to 15%, when the doping concentration of the second impurity in the p-type charge generation layer 32 is low (less than 10%) and the doping concentration of the first impurity in the n-type charge generation layer 31 is high (equal to or close to 2%), the hole content in the p-type charge generation layer 32 in the charge generation stack 30 is low, and its ability to attract electrons is weak, that is, the electron content in the space charge region (the interface region between the n-type charge generation layer 31 and the p-type charge generation layer 32) is low. At this time, the electron content in the high-doping n-type charge generation layer 31 is high, and the concentration of electrons in the n-type charge generation layer 31 and the electrons in the space charge region have a concentration difference, so that the electrons in the n-type charge generation layer 31 can move to the space charge region close to the p-type charge generation layer 32 to replenish the electron content in the space charge region. Furthermore, the space charge region in the charge generation stack 30 can be made to stabilize the PN junction.

[0286] Based on this, the holes in the space charge region will move upward and recombine with the electrons of the second light-emitting unit 40 (provided by the second electrode 50) to form excitons, while the electrons in the space charge region will move downward and recombine with the holes of the first light-emitting unit 20 (provided by the first electrode 10) to form excitons. The closer the number of holes and electrons in the two layers of light-emitting units (the first light-emitting unit 20 and the second light-emitting unit 40) is, the less likely holes and electrons will be transported laterally, and the less likely they will cause crosstalk. In other words, the charge generation stack 30 formed can better improve the problem of lateral hole and electron transport within it, thereby resolving the color shift problem of the display substrate 100.

[0287] In some examples, when the n-type charge generation layer 31 is a first n-type charge generation layer, the doping concentration of the first impurity in the first n-type charge generation layer is approximately 2%, and the doping concentration of the second impurity in the p-type charge generation layer 32 is less than the threshold doping concentration (the doping concentration is in the range of 5% to 10%), the lateral resistance of the charge generation stack 30 formed at this time is 150 GΩ / μm. 2 ~210GΩ / μm 2That is, the lateral resistance value of the charge generation stack 30 can be made larger, so that the charge generation stack 30 can effectively suppress the lateral transmission of holes and electrons in the charge generation stack 30 to the adjacent light-emitting device O, thereby improving the color shift problem of the display substrate 100 and improving the display quality of the display substrate 100.

[0288] For example, when the p-type charge generation layer 32 is the first p-type charge generation layer, the unit of the lateral resistance of the charge generation stack 30 formed at this time is 160 GΩ / μm. 2 ~210GΩ / μm 2 .

[0289] For example, when the p-type charge generation layer 32 is the second p-type charge generation layer, the unit of the lateral resistance of the charge generation stack 30 formed at this time is 150 GΩ / μm. 2 ~190GΩ / μm 2 .

[0290] In summary, when the n-type charge generation layer 31 is a first n-type charge generation layer, and the doping concentration of the first impurity in the first n-type charge generation layer is approximately 2%, and the p-type charge generation layer 32 is a first p-type charge generation layer, and the doping concentration of the second impurity in the first p-type charge generation layer is less than the threshold doping concentration (the doping concentration is in the range of 5% to 10%), the lateral resistance of the formed charge generation stack 30 can be increased, and the color shift problem of the display substrate 100 can be better improved, thereby improving the display quality of the display substrate 100. However, the present disclosure is not limited to this.

[0291] In some examples, when the doping concentration of the first impurity in the n-type charge generation layer 31 is in the range of 1% to 2%, the doping concentration of the second impurity in the p-type charge generation layer 32 is in the range of 5% to 10%.

[0292] That is, when the doping concentration of the second impurity in the first p-type charge generation layer is less than the threshold doping concentration (the doping concentration is in the range of 5% to 10%), an n-type charge generation layer 31 with a larger doping concentration can be selected, that is, the n-type charge generation layer 31 with the doping concentration of the first impurity in the range of 1% to 2% can be selected accordingly.

[0293] Based on this, the charge generation stack 30 can form a PN junction, and the lateral resistance of the formed charge generation stack 30 can be increased, which can better improve the color shift problem of the display substrate 100 and improve the display quality of the display substrate 100. However, the present disclosure is not limited to this.

[0294] In some examples, with respect to the influence of the doping concentration of the n-type charge generation layer 31 and the doping concentration of the p-type charge generation layer 32 in the charge generation stack 30 on the impurity peak of the light emitted by the light-emitting device O, in combination with Figures 27 to 29, the doping concentration of the second impurity in the p-type charge generation layer 32 is set to be greater than or equal to the threshold doping concentration, that is, the doping concentration of the second impurity in the p-type charge generation layer 32 is set to be greater than or equal to 10%: the doping concentration of the first impurity in the n-type charge generation layer 31 is adjusted so that the doping concentration of the first impurity in the n-type charge generation layer 31 floats within the range of 0.5% to 2% for experiments.

[0295] Specifically, the spectra are shown when the doping concentration of the second impurity in the p-type charge generation layer 32 is about 10% and the doping concentration of the first impurity in the n-type charge generation layer 31 is about 0.5% and 1%.

[0296] As shown in Figures 27 to 29 , when the doping concentration of the second impurity in the p-type charge generation layer 32 is approximately 10%, the doping concentration of the first impurity in the n-type charge generation layer 31 ranges from 0.5% to 2%. When the doping concentration is 1% and 0.5%, the proportion of the impurity peak in the light emitted by the corresponding light-emitting device O decreases. That is, when the doping concentration of the second impurity in the p-type charge generation layer 32 is greater than or equal to the threshold doping concentration, a higher doping concentration of the first impurity in the n-type charge generation layer 31 can reduce the proportion of the impurity peak in the light emitted by the light-emitting device O, thereby better addressing the color shift problem of the display substrate 100.

[0297] When the doping concentration of the first impurity in the n-type charge generation layer 31 is between 0.5% and 2%, and the doping concentration of the second impurity in the p-type charge generation layer 32 is between 5% and 15%, the following applies: When the doping concentration of the second impurity in the p-type charge generation layer 32 is high (greater than or equal to 10%) and the doping concentration of the first impurity in the n-type charge generation layer 31 is low (equal to or approaching 0.5%), the p-type charge generation layer 32 in the charge generation stack 30 contains a large number of holes and has a strong ability to attract electrons. This means that the space charge region (the interface region between the n-type charge generation layer 31 and the p-type charge generation layer 32) contains a large number of electrons and a small number of holes. In this case, the high-doping p-type charge generation layer 32 contains a large number of holes, resulting in a concentration difference between the holes in the p-type charge generation layer 32 and the holes in the space charge region. This allows the holes in the p-type charge generation layer 32 to move to the space charge region near the n-type charge generation layer 31, replenishing the hole content in the space charge region. Furthermore, the space charge region in the charge generation stack 30 can be made to stabilize the PN junction.

[0298] Based on this, the holes in the space charge region will move upward and recombine with the electrons of the second light-emitting unit 40 (provided by the second electrode 50) to form excitons, and the electrons in the space charge region will move downward and recombine with the holes of the first light-emitting unit 20 (provided by the first electrode 10) to form excitons. The more the number of holes and electrons in the two layers of light-emitting units (the first light-emitting unit 20 and the second light-emitting unit 40) matches, the weaker the chance of holes and electrons being transported laterally and crosstalk being generated. In other words, the charge generation stack 30 formed based on this can better improve the problem of lateral transmission of holes and electrons within it, and improve the problem of color crosstalk between adjacent light-emitting devices O in the display substrate 100, which in turn causes color deviation of the display substrate 100.

[0299] For example, using a high grayscale (255 grayscale) as an example, as shown in FIG27 , the proportion of noise peaks generated by the light-emitting device O in the first sub-pixel P1 (red) due to the influence of the light-emitting device O in the second sub-pixel P2 (green) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%. As shown in FIG28 , the proportion of noise peaks generated by the light-emitting device O in the second sub-pixel P2 (green) due to the influence of the light-emitting device O in the first sub-pixel P1 (red) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%. As shown in FIG29 , the proportion of noise peaks generated by the light-emitting device O in the third sub-pixel P3 (blue) due to the influence of the light-emitting device O in the first sub-pixel P1 (red) and the light-emitting device O in the second sub-pixel P2 (green) is approximately 0%.

[0300] That is, among the light-emitting device O in the first sub-pixel P1 (red), the light-emitting device O in the second sub-pixel P2 (green), and the light-emitting device O in the third sub-pixel P3 (blue), the proportion of the noise peak generated by the light-emitting device O in one sub-pixel P being affected by the light-emitting devices O in the other two sub-pixels P is approximately 0%.

[0301] In summary, no matter what color light is emitted by the light-emitting device O, when the doping concentration of the second impurity in the p-type charge generation layer 32 is greater than or equal to the threshold doping concentration, the higher the doping concentration of the first impurity in the n-type charge generation layer 31, the smaller the proportion of the impurity peak in the light emitted by the light-emitting device O can be, which can better solve the problem of color deviation of the display substrate 100.

[0302] In some examples, when the n-type charge generation layer 31 is a first n-type charge generation layer, the doping concentration of the first impurity in the first n-type charge generation layer is approximately 0.5%, and the doping concentration of the second impurity in the p-type charge generation layer 32 is greater than or equal to the threshold doping concentration (the doping concentration is in the range of 10% to 15%), the lateral resistance of the charge generation stack 30 formed at this time is 140 GΩ / μm. 2 ~200GΩ / μm 2That is, the lateral resistance value of the charge generation stack 30 can be made larger, so that the charge generation stack 30 can effectively suppress the lateral transmission of holes and electrons in the charge generation stack 30 to the adjacent light-emitting device O, thereby improving the color shift problem of the display substrate 100 and improving the display quality of the display substrate 100.

[0303] For example, when the p-type charge generation layer 32 is the first p-type charge generation layer, the unit of the lateral resistance of the charge generation stack 30 formed at this time is 150 GΩ / μm. 2 ~200GΩ / μm 2 .

[0304] For example, when the p-type charge generation layer 32 is the second p-type charge generation layer, the unit of the lateral resistance of the charge generation stack 30 formed at this time is 140 GΩ / μm. 2 ~180GΩ / μm 2 .

[0305] In summary, when the n-type charge generation layer 31 is a first n-type charge generation layer, and the doping concentration of the first impurity in the first n-type charge generation layer is approximately 0.5%, and the p-type charge generation layer 32 is a first p-type charge generation layer, and the doping concentration of the second impurity in the first p-type charge generation layer is greater than or equal to the threshold doping concentration (the doping concentration is in the range of 10% to 15%), the lateral resistance of the formed charge generation stack 30 can be increased, and the color shift problem of the display substrate 100 can be better improved, thereby improving the display quality of the display substrate 100. However, the present disclosure is not limited to this.

[0306] In some examples, when the doping concentration of the first impurity in the n-type charge generation layer 31 ranges from 0.5% to 1%, the doping concentration of the second impurity in the p-type charge generation layer 32 ranges from 10% to 15%.

[0307] That is, when the doping concentration of the second impurity in the first p-type charge generation layer is greater than or equal to the threshold doping concentration (the doping concentration is in the range of 10% to 15%), an n-type charge generation layer 31 with a smaller doping concentration can be selected, that is, the n-type charge generation layer 31 with a doping concentration of the first impurity in the range of 0.5% to 1% can be selected accordingly.

[0308] Based on this, the charge generation stack 30 can form a PN junction, and the lateral resistance of the formed charge generation stack 30 can be increased, which can better improve the color shift problem of the display substrate 100 and improve the display quality of the display substrate 100. However, the present disclosure is not limited to this.

[0309] Figure 30 shows a spectrum of red light-emitting devices according to further embodiments, Figure 31 shows a spectrum of green light-emitting devices according to further embodiments, and Figure 32 shows a spectrum of blue light-emitting devices according to further embodiments. Figures 30 and 32 illustrate an example where the grayscale of light-emitting device O in substrate 100 is low (e.g., grayscale 8).

[0310] Because the color shift phenomenon of the display substrate 100 is more obvious in a low grayscale state than in a high grayscale state, further experiments were conducted based on Figures 27 to 29 by changing only the grayscale of the light-emitting device O. Specifically, the grayscale of the light-emitting device O in the display substrate 100 is low (e.g., grayscale 8) as an example.

[0311] As shown in Figures 30 to 32 , in a low grayscale state, when the doping concentration of the second impurity in the p-type charge generation layer 32 is greater than or equal to the threshold doping concentration, the lower the impurity concentration of the first impurity in the n-type charge generation layer 31, the better. Specifically, when the impurity concentration of the first impurity in the n-type charge generation layer 31 is within the range of 0.5% to 2%, and the impurity concentration is equal to or close to 0.5%, the proportion of the stray peak in the light emitted by the light-emitting device O is relatively small, which can further improve the color shift problem of the display substrate 100.

[0312] Specifically, as shown in FIG30 , the proportion of noise peaks generated by the light-emitting device O in the first sub-pixel P1 (red) due to the influence of the light-emitting device O in the second sub-pixel P2 (green) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%. As shown in FIG31 , the proportion of noise peaks generated by the light-emitting device O in the second sub-pixel P2 (green) due to the influence of the light-emitting device O in the first sub-pixel P1 (red) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%. As shown in FIG32 , the proportion of noise peaks generated by the light-emitting device O in the third sub-pixel P3 (blue) due to the influence of the light-emitting device O in the first sub-pixel P1 (red) is less than or equal to 3%. The proportion of noise peaks generated by the light-emitting device O in the third sub-pixel P3 (blue) due to the influence of the light-emitting device O in the second sub-pixel P2 (green) is less than or equal to 2.5%.

[0313] In summary, in the low grayscale state, the stray peaks of the red and green light-emitting devices O are essentially eliminated, while the blue light-emitting device O still exhibits a certain degree of stray peaks. However, the stray peak ratio of the light emitted by the blue light-emitting device O can be reduced to less than 4%, thereby improving the color shift of the display substrate 100. Furthermore, regardless of the color of the light-emitting device O, when the doping concentration of the second impurity in the p-type charge generation layer 32 is greater than or equal to the threshold doping concentration, and the impurity concentration is equal to or close to 0.5%, the color shift of the display substrate 100 can be improved. This is particularly evident in the blue light-emitting device O shown in FIG32 . The color shift improvement effect of the display substrate 100 can be further enhanced by adjusting the doping ratio between the n-type charge generation layer 31 and the p-type charge generation layer.

[0314] Combining Table 2 and Figures 27 to 32 below, it can be seen that the differences in color coordinates at different doping concentrations of the n-type charge generation layer at 255 grayscale and 8 grayscale are relatively small, which can be beneficial to improving the color shift of the display substrate 100.

[0315] Table 2 shows the differences in color coordinates at different impurity concentrations in the n-type charge generation layer at 255 grayscale and 8 grayscale.

[0316] The red and green light emitting devices O are both differences on the X axis (the X coordinate axis in the color coordinates), and the blue light emitting device O is the difference on the Y axis (the Y coordinate axis in the color coordinates).

[0317] The above description, in conjunction with the relevant drawings, first introduces that the "other parameters" may include the doping concentration of the charge generation layer of the charge generation stack 30. The following description mainly introduces the relationship between the doping concentration of the charge generation layer and the material of the charge generation layer.

[0318] FIG33 is a spectrum diagram of a red light-emitting device according to further embodiments, FIG34 is a spectrum diagram of a green light-emitting device according to further embodiments, and FIG35 is a spectrum diagram of a blue light-emitting device according to further embodiments. FIG33-35 illustrate the example of a light-emitting device O in substrate 100 having a high grayscale (e.g., grayscale 255) and an n-type charge generation layer 31 being a second type of n-type charge generation layer. FIG36 is a spectrum diagram of a red light-emitting device according to further embodiments, FIG37 is a spectrum diagram of a green light-emitting device according to further embodiments, and FIG38 is a spectrum diagram of a blue light-emitting device according to further embodiments. FIG36-38 illustrate the example of a light-emitting device O in substrate 100 having a high grayscale (e.g., grayscale 255) and an n-type charge generation layer 31 being a first type of n-type charge generation layer.

[0319] The difference between the spectral graphs shown in Figures 36 to 38 and the spectral graphs shown in Figures 33 to 35 is that the n-type charge generation layer 31 in the light-emitting device O corresponding to the spectral graphs shown in Figures 36 to 38 uses the first n-type charge generation layer, while the n-type charge generation layer 31 in the light-emitting device O corresponding to the spectral graphs shown in Figures 33 to 35 uses the second n-type charge generation layer.

[0320] In some embodiments, as shown in combination with FIG. 14 and FIG. 33 to FIG. 38 , the lateral resistance of the n-type charge generation layer 31 is inversely correlated with the doping concentration of the second impurity in the p-type charge generation layer 32 .

[0321] The statement "the lateral resistance of the n-type charge generation layer 31 is inversely correlated with the doping concentration of the second impurity in the p-type charge generation layer 32" can be understood as follows: since the n-type charge generation layer 31 may include a first n-type charge generation layer and a second n-type charge generation layer, and the lateral resistance of the first n-type charge generation layer is greater than that of the second n-type charge generation layer, when the n-type charge generation layer 31 is the first n-type charge generation layer, the lower the doping concentration of the second impurity in the p-type charge generation layer 32, the better the improvement effect on the color shift of the display substrate 100. Similarly, when the n-type charge generation layer 31 is the second n-type charge generation layer, the higher the doping concentration of the second impurity in the p-type charge generation layer 32, the better the improvement effect on the color shift of the display substrate 100.

[0322] In some examples, with respect to the effect of the doping concentration of the second impurity in the p-type charge generation layer 32 on the impurity peak of the light emitted by the light-emitting device O when the second n-type charge generation layer is selected as the n-type charge generation layer 31, combined with Figures 33 to 35, when the second n-type charge generation layer is selected as the n-type charge generation layer 31, the doping concentration of the second impurity in the p-type charge generation layer 32 is adjusted so that the doping concentration of the second impurity in the p-type charge generation layer 32 floats within the range of 5% to 15% for experiments.

[0323] Specifically, the spectra are shown when the n-type charge generation layer 31 is the second n-type charge generation layer and the doping concentration of the second impurity in the p-type charge generation layer 32 is approximately 5% and 10%.

[0324] As shown in Figures 33 to 35 , when the second type of n-type charge generation layer is selected as the n-type charge generation layer 31, the proportion of the stray peak in the light emitted by the corresponding light-emitting device O decreases when the doping concentration of the second impurity in the p-type charge generation layer 32 is 5% and 10%. That is, when the second type of n-type charge generation layer with a lower lateral resistance is selected as the n-type charge generation layer 31, a higher doping concentration of the second impurity in the p-type charge generation layer 31 can reduce the proportion of the stray peak in the light emitted by the light-emitting device O, thereby better solving the color shift problem of the display substrate 100.

[0325] 33 to 35 , regardless of the color of light emitted by the light-emitting device O: when the n-type charge generation layer 31 uses the second n-type charge generation layer, the higher the doping concentration of the second impurity in the p-type charge generation layer 31, the smaller the proportion of the impurity peak in the light emitted by the light-emitting device O can be, which can better solve the problem of color deviation of the display substrate 100.

[0326] In summary, when the n-type charge generation layer 31 is the second type of n-type charge generation layer, and the doping concentration of the second impurity in the p-type charge generation layer 32 is within a range of 5% to 15%,

[0327] Since the lateral resistance of the second n-type charge generation layer is smaller (relative to the first n-type charge generation layer), the electrons in the second n-type charge generation layer are prone to lateral transmission problems, which in turn leads to a smaller electron content in the second n-type charge generation layer. Since the second n-type charge generation layer has a smaller electron content, the ability to attract holes is weaker, resulting in a smaller hole content in the space charge region (the interface region between the n-type charge generation layer 31 and the p-type charge generation layer 32). At this time, the higher the doping concentration of the p-type charge generation layer 32, the higher the hole content in the p-type charge generation layer 32. Furthermore, the holes in the p-type charge generation layer 32 and the holes in the space charge region can have a concentration difference, so that the holes in the p-type charge generation layer 32 can move to the space charge region close to the n-type charge generation layer 31 to supplement the hole content in the space charge region. Furthermore, the space charge region in the charge generation stack 30 can stabilize the PN junction.

[0328] Based on this, the holes in the space charge region will move upward and recombine with the electrons of the second light-emitting unit 40 (provided by the second electrode 50) to form excitons, while the electrons in the space charge region will move downward and recombine with the holes of the first light-emitting unit 20 (provided by the first electrode 10) to form excitons. The closer the number of holes and electrons in the two layers of light-emitting units (the first light-emitting unit 20 and the second light-emitting unit 40) is, the less likely holes and electrons will be transported laterally, and the less likely they will cause crosstalk. In other words, the charge generation stack 30 formed based on this can better improve the problem of lateral transmission of holes and electrons within it, thereby solving the problem of color shift in the display substrate 100.

[0329] In some examples, with respect to the effect of the doping concentration of the second impurity in the p-type charge generation layer 32 on the impurity peak of the light emitted by the light-emitting device O when the first n-type charge generation layer is selected as the n-type charge generation layer 31, combined with Figures 36 to 38, when the first n-type charge generation layer is selected as the n-type charge generation layer 31, the doping concentration of the second impurity in the p-type charge generation layer 32 is adjusted so that the doping concentration of the second impurity in the p-type charge generation layer 32 floats within the range of 5% to 15% for experiments.

[0330] Specifically, the spectra are shown when the n-type charge generation layer 31 is the first n-type charge generation layer and the doping concentration of the second impurity in the p-type charge generation layer 32 is approximately 5%, 10% and 15%.

[0331] As shown in Figures 36 to 38 , when the first type of n-type charge generation layer is selected as the n-type charge generation layer 31, the proportion of the stray peak in the light emitted by the corresponding light-emitting device O decreases when the doping concentration of the second impurity in the p-type charge generation layer 32 is 15%, 10%, and 5%. That is, when the first type of n-type charge generation layer with a smaller lateral resistance is selected as the n-type charge generation layer 31, the lower the doping concentration of the second impurity in the p-type charge generation layer 31, the smaller the proportion of the stray peak in the light emitted by the light-emitting device O, which can better solve the color shift problem of the display substrate 100.

[0332] 36 to 38 , regardless of the color of light emitted by the light-emitting device O: when the n-type charge generation layer 31 uses the first n-type charge generation layer, the lower the doping concentration of the second impurity in the p-type charge generation layer 31, the smaller the proportion of the impurity peak in the light emitted by the light-emitting device O can be, which can better solve the problem of color deviation of the display substrate 100.

[0333] In summary, when the n-type charge generation layer 31 is the first n-type charge generation layer, and the doping concentration of the second impurity in the p-type charge generation layer 32 is within the range of 5% to 15%, the following applies: Since the lateral resistance of the first n-type charge generation layer is relatively large (relative to the second n-type charge generation layer), the electrons in the first n-type charge generation layer are not easily subject to lateral transmission problems, which in turn leads to a higher electron content in the first n-type charge generation layer. Since the first n-type charge generation layer has a higher electron content, it has a stronger ability to attract holes, resulting in a higher hole content and a lower electron content in the space charge region (the interface region between the n-type charge generation layer 31 and the p-type charge generation layer 32). At this time, the lower the doping concentration of the p-type charge generation layer 32, the lower the hole content in the p-type charge generation layer 32. Furthermore, a concentration difference can be made between the holes in the p-type charge generation layer 32 and the holes in the space charge region, and the holes in the space charge region can move toward the p-type charge generation layer 32. Also, a concentration difference can be made between the electrons in the n-type charge generation layer 31 and the electrons in the space charge region, and the electrons in the n-type charge generation layer 31 can move toward the space charge region. Based on this, the electron and hole contents in the space charge region can be made relatively balanced, and the PN junction of the space charge region in the charge generation stack 30 can be stabilized.

[0334] Based on this, the holes in the space charge region will move upward and recombine with the electrons of the second light-emitting unit 40 (provided by the second electrode 50) to form excitons, while the electrons in the space charge region will move downward and recombine with the holes of the first light-emitting unit 20 (provided by the first electrode 10) to form excitons. The closer the number of holes and electrons in the two layers of light-emitting units (the first light-emitting unit 20 and the second light-emitting unit 40) is, the less likely holes and electrons will be transported laterally, and the less likely they will cause crosstalk. In other words, the charge generation stack 30 formed based on this can better improve the problem of lateral transmission of holes and electrons within it, thereby solving the problem of color shift in the display substrate 100.

[0335] For example, using a high grayscale (255 grayscale) as an example, as shown in FIG36 , the proportion of noise peaks generated by the light-emitting device O in the first sub-pixel P1 (red) affected by the light-emitting device O in the second sub-pixel P2 (green) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%. As shown in FIG37 , the proportion of noise peaks generated by the light-emitting device O in the second sub-pixel P2 (green) affected by the light-emitting device O in the first sub-pixel P1 (red) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%. As shown in FIG38 , the proportion of noise peaks generated by the light-emitting device O in the third sub-pixel P3 (blue) affected by the light-emitting device O in the first sub-pixel P1 (red) and the light-emitting device O in the second sub-pixel P2 (green) is approximately 0%.

[0336] That is, among the light-emitting device O in the first sub-pixel P1 (red), the light-emitting device O in the second sub-pixel P2 (green), and the light-emitting device O in the third sub-pixel P3 (blue), the proportion of the noise peak generated by the light-emitting device O in one sub-pixel P being affected by the light-emitting devices O in the other two sub-pixels P is approximately 0%.

[0337] In summary, no matter what color light is emitted by the light-emitting device O, when the n-type charge generation layer 31 selects the first n-type charge generation layer, the lower the doping concentration of the second impurity in the p-type charge generation layer 31, the smaller the proportion of the impurity peak in the light emitted by the light-emitting device O can be, which can better solve the problem of color deviation of the display substrate 100.

[0338] FIG39 is a spectrum diagram of a red light emitting device according to still other embodiments, FIG40 is a spectrum diagram of a green light emitting device according to still other embodiments, and FIG41 is a spectrum diagram of a blue light emitting device according to still other embodiments.

[0339] 39 to 41 are described by taking the case where the grayscale of the light emitting device O in the substrate 100 is low grayscale (eg, grayscale 8) and the n-type charge generation layer 31 is the first n-type charge generation layer as an example.

[0340] Because the color shift phenomenon of the display substrate 100 is more obvious in a low grayscale state than in a high grayscale state, further experiments were conducted based on Figures 36 to 38 , with only the grayscale of the light-emitting device O being varied. Specifically, the grayscale of the light-emitting device O in the display substrate 100 being low grayscale (e.g., grayscale 8) was used as an example for description.

[0341] 39 to 41 , it can be seen that in a low grayscale state, when the n-type charge generation layer 31 selects the first n-type charge generation layer, the lower the doping concentration of the second impurity in the p-type charge generation layer 31, the smaller the proportion of the impurity peak in the light emitted by the light-emitting device O can be, which can better solve the problem of color deviation of the display substrate 100.

[0342] That is, when the n-type charge generation layer 31 selects the first n-type charge generation layer, the doping concentration of the second impurity in the p-type charge generation layer 31 is in the range of 5% to 15%. When the impurity concentration is equal to or close to 5%, the proportion of the impurity peak of the light emitted by the light-emitting device O can be relatively smaller, which can be more conducive to improving the color deviation problem of the display substrate 100.

[0343] Specifically, as shown in FIG39 , the light-emitting device O in the first sub-pixel P1 (red) is affected by the light-emitting device O in the second sub-pixel P2 (green) and the light-emitting device O in the third sub-pixel P3 (blue), and the proportion of the noise peak generated is approximately 0%.

[0344] As shown in FIG40 , the light emitting device O in the second sub-pixel P2 (green) is affected by the light emitting device O in the first sub-pixel P1 (red) and the light emitting device O in the third sub-pixel P3 (blue), and the proportion of the noise peak generated is approximately 0%.

[0345] As shown in FIG41 , the proportion of the noise peak generated by the light-emitting device O in the third sub-pixel P3 (blue) due to the influence of the light-emitting device O in the first sub-pixel P1 (red) is less than or equal to 3.5%. The proportion of the noise peak generated by the light-emitting device O in the third sub-pixel P3 (blue) due to the influence of the light-emitting device O in the second sub-pixel P2 (green) is less than or equal to 3%.

[0346] In summary, in the low grayscale state, the stray peaks of the red and green light-emitting devices O are essentially eliminated, while the blue light-emitting device O still has a certain degree of stray peaks. However, the proportion of stray peaks in the light emitted by the blue light-emitting device O can be reduced to less than 4%, which can also improve the color shift problem of the display substrate 100.

[0347] Moreover, no matter what color light is emitted by the light-emitting device O, when the n-type charge generation layer 31 is the first n-type charge generation layer, when the doping concentration of the second impurity in the p-type charge generation layer 31 is equal to or close to 5%, the color deviation of the display substrate 100 can be improved better.

[0348] Among them, the light-emitting device O emitting blue light shown in FIG41 is particularly obvious, and the improvement effect of the color deviation of the display substrate 100 can be further improved by adjusting the lateral resistance of the n-type charge generation layer 31 and the doping ratio between the p-type charge generation layer.

[0349] From Table 3 and Figures 36 to 41 below, it can be seen that the differences in color coordinates at different doping concentrations of the p-type charge generation layer at 255 grayscale and 8 grayscale are relatively small, which can be beneficial for improving the color shift of the display substrate 100.

[0350] In Table 3 below, the red light emitting device O and the green light emitting device O are both differences on the X axis (the X coordinate axis in the color coordinate), and the blue light emitting device O is the difference on the Y axis (the Y coordinate axis in the color coordinate).

[0351] Table 3 shows the differences in color coordinates at different doping concentrations of the p-type charge generation layer at 255 grayscales and 8 grayscales.

[0352] In some examples, the lateral resistance of the charge generation stack 30 is inversely correlated with the doping concentration of the second impurity in the p-type charge generation layer 32. The phrase "the lateral resistance of the charge generation stack 30 is inversely correlated with the doping concentration of the second impurity in the p-type charge generation layer 32" can be understood to mean that the lateral resistance of the charge generation stack 30 is in the range of 100 GΩ / μm. 2～ 260GΩ / μm 2 On the basis of:

[0353] For example, the lateral resistance of the charge generation stack 30 is in the range of 180 GΩ / μm. 2～ 260GΩ / μm 2 When , the doping concentration of the second impurity in the p-type charge generation layer 32 is in the range of 5% to 10%.

[0354] The lateral resistance of the charge generation stack 30 is greater than 180 GΩ / μm 2 When the lateral resistance of the charge generation stack 30 is within 180GΩ / μm 2～ 260GΩ / μm 2In this case, the p-type charge generation layer 32 may be selected to have a lower doping concentration of the second impurity, so that the electron content of the space charge region within the charge generation stack 30 can be supplemented by the n-type charge generation layer 31. This can further stabilize the PN junction in the space charge region within the charge generation stack 30.

[0355] Based on this, the holes in the space charge region will move upward and recombine with the electrons of the second light-emitting unit 40 (provided by the second electrode 50) to form excitons, while the electrons in the space charge region will move downward and recombine with the holes of the first light-emitting unit 20 (provided by the first electrode 10) to form excitons. The closer the number of holes and electrons in the two layers of light-emitting units (the first light-emitting unit 20 and the second light-emitting unit 40) is, the less likely holes and electrons will be transported laterally, and the less likely they will cause crosstalk. In other words, the charge generation stack 30 formed based on this can better improve the problem of lateral transmission of holes and electrons within it, thereby solving the problem of color shift in the display substrate 100.

[0356] For example, the lateral resistance of the charge generation stack 30 is in the range of 100 GΩ / μm. 2～ 180GΩ / μm 2 When , the doping concentration of the second impurity in the p-type charge generation layer 32 is in the range of 10% to 15%.

[0357] The lateral resistance of the charge generation stack 30 is less than 180 GΩ / μm 2 When the lateral resistance of the charge generation stack 30 is within 180GΩ / μm 2～ 260GΩ / μm 2 In this case, the p-type charge generation layer 32 may be selected to have a higher doping concentration of the second impurity so that the p-type charge generation layer 32 can be used to supplement the hole content in the space charge region within the charge generation stack 30. Furthermore, the space charge region within the charge generation stack 30 can be stabilized to form a PN junction.

[0358] Based on this, the holes in the space charge region will move upward and recombine with the electrons of the second light-emitting unit 40 (provided by the second electrode 50) to form excitons, while the electrons in the space charge region will move downward and recombine with the holes of the first light-emitting unit 20 (provided by the first electrode 10) to form excitons. The closer the number of holes and electrons in the two layers of light-emitting units (the first light-emitting unit 20 and the second light-emitting unit 40) is, the less likely holes and electrons will be transported laterally, and the less likely they will cause crosstalk. In other words, the charge generation stack 30 formed based on this can better improve the problem of lateral transmission of holes and electrons within it, thereby solving the problem of color shift in the display substrate 100.

[0359] The above embodiments, combined with the relevant figures, describe how to adjust the characteristics of the n-type charge generation layer 31, or how to coordinate the n-type charge generation layer 31 with the p-type charge generation layer 32, to reduce the noise peaks in the light emitted by the light-emitting device O and improve the color shift problem of the display substrate 100. The following, combined with the relevant figures, primarily describes whether a single p-type charge generation layer 32 can reduce the noise peaks in the light emitted by the light-emitting device O, and verifies whether this can be achieved.

[0360] Figure 42 shows a spectrum of red light-emitting devices according to further embodiments, Figure 43 shows a spectrum of green light-emitting devices according to further embodiments, and Figure 44 shows a spectrum of blue light-emitting devices according to further embodiments. Figures 42 to 44 illustrate an example in which the grayscale of the light-emitting device O in the substrate 100 is a high grayscale (e.g., grayscale 255) and the n-type charge generation layer 31 is a first type n-type charge generation layer.

[0361] 42 to 44 , the p-type charge generation layer 31 includes a first p-type charge generation layer and a second p-type charge generation layer, wherein the first p-type charge generation layer has a greater lateral resistance than the second p-type charge generation layer.

[0362] When the n-type charge generation layer 31 is the first n-type charge generation layer, the charge generation layer 31 formed by the first n-type charge generation layer and the p-type charge generation layer (the first p-type charge generation layer or the second p-type charge generation layer) can make the lateral resistance value of the charge generation stack 30 in the range of 100 GΩ / μm. 2 ~260GΩ / μm 2 The charge generation stack 30 can effectively inhibit the holes and electrons in the charge generation stack 30 from being transferred laterally to the adjacent light emitting device O, thereby improving the color shift problem of the display substrate 100 and preventing the life of the light emitting device O from being affected.

[0363] Continuing with Figures 42 to 44, since the lateral resistance of the first p-type charge generation layer is greater than the lateral resistance of the second p-type charge generation layer, when the first p-type charge generation layer is used, the lateral resistance of the charge generation stack 30 can be made larger, which can help reduce the lateral leakage current generated in the charge generation stack 30 and better improve the color deviation problem of the display substrate 100.

[0364] For example, using a high grayscale (255 grayscale) as an example, as shown in FIG42 , the proportion of noise peaks generated by the light-emitting device O in the first sub-pixel P1 (red) due to the influence of the light-emitting device O in the second sub-pixel P2 (green) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%. As shown in FIG43 , the proportion of noise peaks generated by the light-emitting device O in the second sub-pixel P2 (green) due to the influence of the light-emitting device O in the first sub-pixel P1 (red) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%. As shown in FIG44 , the proportion of noise peaks generated by the light-emitting device O in the third sub-pixel P3 (blue) due to the influence of the light-emitting device O in the first sub-pixel P1 (red) and the light-emitting device O in the second sub-pixel P2 (green) is approximately 0%.

[0365] That is, among the light-emitting device O in the first sub-pixel P1 (red), the light-emitting device O in the second sub-pixel P2 (green), and the light-emitting device O in the third sub-pixel P3 (blue), the proportion of the noise peak generated by the light-emitting device O in one sub-pixel P being affected by the light-emitting devices O in the other two sub-pixels P is approximately 0%.

[0366] In summary, whether the p-type charge generation layer 31 is the first or second p-type charge generation layer, the proportion of the stray peak of the light emitted by the light-emitting device O can be reduced, thereby improving the color shift problem of the display substrate 100.

[0367] FIG45 is a spectrum diagram of a red light emitting device according to still other embodiments, FIG46 is a spectrum diagram of a green light emitting device according to still other embodiments, and FIG47 is a spectrum diagram of a blue light emitting device according to still other embodiments.

[0368] 45 to 47 are described by taking as an example the grayscale of the light-emitting device O in the substrate 100 being low grayscale (eg, grayscale 8) and the n-type charge generation layer 31 being the first n-type charge generation layer.

[0369] Because the color shift phenomenon of the display substrate 100 is more obvious in a low grayscale state than in a high grayscale state, further experiments were conducted based on Figures 42 to 44 by changing only the grayscale of the light-emitting device O. Specifically, the grayscale of the light-emitting device O in the display substrate 100 is low (e.g., grayscale 8) as an example.

[0370] In some embodiments, as shown in Figures 45 to 47 , when the p-type charge generation layer 31 is the first or second type, the proportion of stray peaks in the light emitted by the light-emitting device O is similar. That is, when the p-type charge generation layer 31 is the first or second type, there is no significant difference in the proportion of stray peaks in the light emitted by the light-emitting device O. Based on this, it can be seen that in low grayscale states, whether the p-type charge generation layer 31 is the first or second type makes no significant difference in improving the lateral crosstalk problem of the display substrate 100.

[0371] In summary, the charge generation stack 30 can optionally select either the first or second p-type charge generation layer when the first n-type charge generation layer is selected as the n-type charge generation layer 31. The first p-type charge generation layer exhibits a slightly better effect than the second p-type charge generation layer at high grayscales. However, the effect is less pronounced at low grayscales. Furthermore, the second p-type charge generation layer can also be selected when the first n-type charge generation layer is selected as the n-type charge generation layer 31 to improve the color shift problem of the display substrate 100.

[0372] As shown in Table 4 below and Figures 42 to 47 , it can be seen that at 255 grayscales and 8 grayscales, when the n-type charge generation layer 31 selects the first n-type charge generation layer, and when the p-type charge generation layer selects the first p-type charge generation layer or the second p-type charge generation layer, the difference in color coordinates is relatively small, which can enhance the effect of improving the color deviation of the display substrate 100.

[0373] Table 4 shows the color coordinate differences of different types of p-type charge generation layers at 255 grayscale and 8 grayscale.

[0374] In Table 4 below, the red light emitting device O and the green light emitting device O are both differences on the X-axis (the X-coordinate axis in the color coordinate), and the blue light emitting device O is the difference on the Y-axis (the Y-coordinate axis in the color coordinate).

[0375] In some embodiments, as shown in FIG14 , the thickness of the p-type charge generation layer 32 ranges from

[0376] The thickness of the p-type charge generation layer 32 is set to Within this range, the n-type charge generation layer 31 , the p-type charge generation layer 32 and other film layers in the light-emitting device O can cooperate with each other to form a microcavity structure, so as to improve the luminous effect of the light-emitting device O.

[0377] In some examples, the thickness of the p-type charge generation layer 32 ranges from The thickness of the p-type charge generation layer 32 is set to Within this range, the n-type charge generation layer 31 , the p-type charge generation layer 32 and other film layers in the light-emitting device O can cooperate with each other to form a microcavity structure, so as to improve the luminous effect of the light-emitting device O.

[0378] For example, the thickness of the p-type charge generation layer 32 is approximately and However, the embodiments of the present disclosure are not limited thereto.

[0379] It should be noted that the thickness of the p-type charge generation layer 32 is approximately For example, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), the thickness error of the p-type charge generation layer 32 fluctuates within a range of When the thickness of the p-type charge generation layer 32 is equal to

[0380] In addition, in other examples, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), the error floating range of the thickness of the p-type charge generation layer 32 is When the thickness of the p-type charge generation layer 32 is equal to

[0381] FIG48 is a spectrum diagram of a red light-emitting device according to further embodiments, FIG49 is a spectrum diagram of a green light-emitting device according to further embodiments, and FIG50 is a spectrum diagram of a blue light-emitting device according to further embodiments. FIG48 to FIG50 illustrate an example in which the grayscale of the light-emitting device O in the substrate 100 is a high grayscale (e.g., grayscale 255) and the n-type charge generation layer 31 is a second type n-type charge generation layer.

[0382] Since the above embodiment verifies that the thickness of the n-type charge generation layer 31 is helpful in reducing the stray peaks of the light of the light emitting device O, this embodiment further verifies whether the thickness of the p-type charge generation layer is helpful in reducing the stray peaks of the light of the light emitting device O.

[0383] Based on this, in some embodiments, as shown in FIG48 to FIG50, when the n-type charge generation layer 31 is the second n-type charge generation layer, an experiment is conducted based on the thickness of the P-type charge generation layer. Specifically, the thickness of the P-type charge generation layer is respectively and Conduct experiments.

[0384] As shown in Figures 48 to 50 , when the n-type charge generation layer 31 is the second type, p-type charge generation layers of varying thickness have no significant effect on reducing the noise peaks in the light emitted by the light-emitting device O. In other words, the thickness of the p-type charge generation layer does not play a decisive role in improving the color shift of the display substrate 100 and can be specifically set based on the requirements of the microcavity structure of the light-emitting device O.

[0385] FIG51 is a spectrum diagram of a red light-emitting device according to further embodiments, FIG52 is a spectrum diagram of a green light-emitting device according to further embodiments, and FIG53 is a spectrum diagram of a blue light-emitting device according to further embodiments. FIG51-53 illustrate an example in which the grayscale of the light-emitting device O in the substrate 100 is a high grayscale (e.g., grayscale 255), and the n-type charge generation layer 31 is a first type n-type charge generation layer.

[0386] In some embodiments, in conjunction with FIG51 to FIG53, when the n-type charge generation layer 31 is the first n-type charge generation layer, an experiment is conducted based on the thickness of the P-type charge generation layer. Specifically, the thickness of the P-type charge generation layer is respectively and Conduct experiments.

[0387] As shown in Figures 51 to 53 , when the n-type charge generation layer 31 is the first type of n-type charge generation layer, different thicknesses of the p-type charge generation layer have no significant effect on reducing the noise peak of the light emitted by the light-emitting device O. In other words, the thickness of the p-type charge generation layer does not play a decisive role in improving the color shift of the display substrate 100 and can be specifically set according to the requirements of the microcavity structure of the light-emitting device O.

[0388] FIG54 is a spectrum diagram of a red light-emitting device according to further embodiments, FIG55 is a spectrum diagram of a green light-emitting device according to further embodiments, and FIG56 is a spectrum diagram of a blue light-emitting device according to further embodiments. FIG54-56 illustrate an example in which the grayscale of the light-emitting device O in the substrate 100 is low grayscale (e.g., grayscale 8) and the n-type charge generation layer 31 is a first type n-type charge generation layer.

[0389] Because the color shift phenomenon of the display substrate 100 is more obvious in a low grayscale state than in a high grayscale state, further experiments were conducted based on Figures 51 to 53 by changing only the grayscale of the light-emitting device O. Specifically, the grayscale of the light-emitting device O in the display substrate 100 is low (e.g., grayscale 8) as an example.

[0390] In some embodiments, in conjunction with FIG54 to FIG56, when the n-type charge generation layer 31 is the first n-type charge generation layer, an experiment is conducted based on the thickness of the P-type charge generation layer. Specifically, the thickness of the P-type charge generation layer is respectively and Conduct experiments.

[0391] As shown in Figures 51 to 53 , when the n-type charge generation layer 31 is the first type of n-type charge generation layer, different thicknesses of the p-type charge generation layer have no significant effect on reducing the noise peak of the light emitted by the light-emitting device O. In other words, the thickness of the p-type charge generation layer does not play a decisive role in improving the color shift of the display substrate 100 and can be specifically set according to the requirements of the microcavity structure of the light-emitting device O.

[0392] As shown in Table 5 below and Figures 51 to 56 , it can be seen that at grayscales 255 and 8, when the n-type charge generation layer 31 is the first n-type charge generation layer, the differences in color coordinates at different thicknesses of the P-type charge generation layer are relatively small, which can be beneficial to improving the color deviation improvement effect of the display substrate 100.

[0393] The red and green light emitting devices O are both differences on the X axis (the X coordinate axis in the color coordinates), and the blue light emitting device O is the difference on the Y axis (the Y coordinate axis in the color coordinates).

[0394] Table 5 shows the differences in color coordinates at 255 grayscale and 8 grayscale when the thickness of the p-type charge generation layer is different.

[0395] As described above, in conjunction with the accompanying drawings, various parameters of the charge generation stack 30 are adjusted to reduce the proportion of stray peaks in the light emitted by the light-emitting device O, thereby improving the color shift problem of the display substrate 100. The following will discuss another approach to reduce the proportion of stray peaks in the light emitted by the light-emitting device O by adjusting the minimum spacing between two adjacent sub-pixels P.

[0396] FIG57 is a structural diagram of a display substrate according to some other embodiments.

[0397] In some embodiments, as shown in FIG. 57 , along the first direction X, a minimum distance D between two adjacent sub-pixels P is greater than or equal to 19 μm.

[0398] Since the charge generation stacks 30 between two adjacent sub-pixels P are connected along the first direction X, the electrons and holes generated in the charge generation stack 30 are easily transferred laterally to the charge generation stack 30 in the adjacent sub-pixel P, resulting in the light emitted by the light-emitting device O having a mixed peak.

[0399] On this basis, the minimum spacing D between two adjacent sub-pixels P along the first direction X is set to be greater than or equal to 19 μm, so that the minimum spacing between the charge generation stacks 30 in the light-emitting devices O in the two adjacent sub-pixels P can be greater than or equal to 19 μm, so as to increase the path of the lateral transmission of holes and electrons in the charge generation stack 30, and thereby relatively increase the resistance to the lateral transmission of holes and electrons in the charge generation stack 30, so as to reduce the holes and electrons generated in the charge generation stack 30 of the light-emitting device O in one sub-pixel P in the two adjacent sub-pixels P, and move them laterally to the charge generation stack 30 of the light-emitting device O in the other sub-pixel P in the two adjacent sub-pixels P, so as to reduce lateral crosstalk.

[0400] When the minimum spacing D between two adjacent sub-pixels P along the first direction X is equal to or close to 19 μm, the minimum spacing between the charge generation stacks 30 in the light-emitting devices O within the two adjacent sub-pixels P can be increased. This increases the path for lateral transport of holes and electrons within the charge generation stacks 30, thereby reducing lateral crosstalk. Furthermore, this can prevent the minimum spacing between two adjacent sub-pixels P from being too large, which could affect the pixel aperture ratio of the display substrate 100.

[0401] FIG58 is a spectrum diagram of a red light-emitting device according to further embodiments, FIG59 is a spectrum diagram of a green light-emitting device according to further embodiments, and FIG60 is a spectrum diagram of a blue light-emitting device according to further embodiments. FIG58 to FIG60 illustrate an example in which the grayscale of the light-emitting device O in the substrate 100 is a high grayscale (e.g., grayscale 255).

[0402] In some embodiments, as shown in Figures 57 to 60 , experiments were conducted by adjusting the minimum spacing D between two adjacent sub-pixels P while maintaining all parameters of the charge generation stack 30. Specifically, the following spectra are shown when the minimum spacing D between two adjacent sub-pixels P is 20 μm and 23 μm, respectively.

[0403] As shown in Figures 58 to 60, when the minimum spacing D between two adjacent sub-pixels P is 23 μm, compared with when the minimum spacing D between two adjacent sub-pixels P is 20 μm, the proportion of the stray peak of the light emitted by the light-emitting device O can be relatively smaller, which can be more conducive to improving the color deviation problem of the display substrate 100.

[0404] That is, on the basis that the parameters of the charge generation stack 30 remain unchanged, and in the case that the minimum spacing D between two adjacent sub-pixels P along the first direction X is greater than or equal to 19 μm, the larger the minimum spacing D between two adjacent sub-pixels P, the smaller the proportion of the stray peaks in the light emitted by the optical device O can be, which can be more conducive to improving the color deviation problem of the display substrate 100.

[0405] For example, using a high grayscale (255 grayscale) as an example, as shown in FIG58 , the proportion of noise peaks generated by the light-emitting device O in the first sub-pixel P1 (red) due to the influence of the light-emitting device O in the second sub-pixel P2 (green) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%. As shown in FIG59 , the proportion of noise peaks generated by the light-emitting device O in the second sub-pixel P2 (green) due to the influence of the light-emitting device O in the first sub-pixel P1 (red) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%. As shown in FIG60 , the proportion of noise peaks generated by the light-emitting device O in the third sub-pixel P3 (blue) due to the influence of the light-emitting device O in the first sub-pixel P1 (red) and the light-emitting device O in the second sub-pixel P2 (green) is approximately 0%.

[0406] That is, among the light-emitting device O in the first sub-pixel P1 (red), the light-emitting device O in the second sub-pixel P2 (green), and the light-emitting device O in the third sub-pixel P3 (blue), the proportion of the noise peak generated by the light-emitting device O in one sub-pixel P being affected by the light-emitting devices O in the other two sub-pixels P is approximately 0%.

[0407] In summary, regardless of the color of light emitted by the light-emitting device O, when the minimum spacing D between two adjacent sub-pixels P is greater than or equal to 19 μm, the larger the minimum spacing D between two adjacent sub-pixels P is set, the smaller the proportion of the stray peaks in the light emitted by the light device O can be, which can be more conducive to improving the color deviation problem of the display substrate 100.

[0408] FIG61 is a spectrum diagram of a red light-emitting device according to further embodiments, FIG62 is a spectrum diagram of a green light-emitting device according to further embodiments, and FIG63 is a spectrum diagram of a blue light-emitting device according to further embodiments. FIG61 to FIG63 illustrate an example in which the grayscale of the light-emitting device O in the substrate 100 is low grayscale (e.g., grayscale 8).

[0409] Because the color shift phenomenon of the display substrate 100 is more obvious in a low grayscale state than in a high grayscale state, further experiments were conducted based on Figures 58 to 60 by changing only the grayscale of the light-emitting device O. Specifically, the grayscale of the light-emitting device O in the display substrate 100 is low (e.g., grayscale 8) as an example.

[0410] 61 to 63 , it can be seen that in the low grayscale state, when the minimum spacing D between two adjacent sub-pixels P is greater than or equal to 19 μm, the larger the minimum spacing D between two adjacent sub-pixels P is, the smaller the proportion of the stray peaks in the light emitted by the light-emitting device O can be, which can better solve the problem of color deviation of the display substrate 100.

[0411] Specifically, as shown in FIG61 , the proportion of the noise peaks generated by the light-emitting device O in the first sub-pixel P1 (red) being affected by the light-emitting device O in the second sub-pixel P2 (green) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%.

[0412] As shown in FIG62 , the proportion of the noise peak generated by the light-emitting device O in the second sub-pixel P2 (green) being affected by the light-emitting device O in the first sub-pixel P1 (red) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%.

[0413] As shown in FIG63 , the proportion of the noise peak generated by the light-emitting device O in the third sub-pixel P3 (blue) due to the influence of the light-emitting device O in the first sub-pixel P1 (red) is less than or equal to 1.5%. The proportion of the noise peak generated by the light-emitting device O in the third sub-pixel P3 (blue) due to the influence of the light-emitting device O in the second sub-pixel P2 (green) is less than or equal to 1.5%.

[0414] In summary, in the low grayscale state, the stray peaks of the red and green light-emitting devices O are essentially eliminated, while the blue light-emitting device O still has a certain degree of stray peaks. However, the proportion of stray peaks in the light emitted by the blue light-emitting device O can be reduced to less than 4%, which can also improve the color shift problem of the display substrate 100.

[0415] Moreover, regardless of the color of light emitted by the light-emitting device O, when the minimum distance D between two adjacent sub-pixels P is greater than or equal to 19 μm, the larger the minimum distance D between two adjacent sub-pixels P, the better the improvement effect of the color shift of the display substrate 100.

[0416] Combining Table 6 and Figures 58 to 63 below, it can be seen that under grayscale 255 and grayscale 8, the difference in color coordinates under the minimum distance D between two adjacent sub-pixels P is small, which can be beneficial to improving the color shift improvement effect of the display substrate 100.

[0417] Table 6 shows the color coordinate differences at the minimum distance D between two adjacent sub-pixels P at 255 grayscale and 8 grayscale.

[0418] The red and green light emitting devices O are both differences on the X axis (the X coordinate axis in the color coordinates), and the blue light emitting device O is the difference on the Y axis (the Y coordinate axis in the color coordinates).

[0419] In some embodiments, as shown in FIG42 , the minimum distance D between two adjacent sub-pixels P along the first direction X is less than or equal to 24 μm. This prevents the minimum distance D between two adjacent sub-pixels P in the display substrate 100 from being too large, thereby reducing the aperture ratio of the display substrate 100.

[0420] When the minimum spacing D between two adjacent sub-pixels P is equal to or close to 24 μm, the minimum spacing D between two adjacent sub-pixels P can be made larger, effectively hindering the lateral movement of holes and electrons in the charge generation stack 30, and also preventing the minimum spacing D from being too large, which would lead to a reduction in the aperture ratio of the display substrate 100.

[0421] In some embodiments, as shown in FIG. 57 , along the first direction X, the minimum distance D between two adjacent sub-pixels P ranges from 19 μm to 24 μm.

[0422] When the minimum spacing D between two adjacent sub-pixels P is equal to or close to 19 μm, the minimum spacing between the charge generation stacks 30 in the light-emitting devices O within the two adjacent sub-pixels P can be increased. This increases the path for lateral transport of holes and electrons within the charge generation stacks 30, thereby reducing lateral crosstalk. Furthermore, this can prevent the minimum spacing between two adjacent sub-pixels P from being too large, which could affect the pixel aperture ratio of the display substrate 100.

[0423] When the minimum spacing D between two adjacent sub-pixels P is equal to or close to 24 μm, the minimum spacing D between two adjacent sub-pixels P can be made larger, effectively hindering the lateral movement of holes and electrons in the charge generation stack 30, and also preventing the minimum spacing D from being too large, which would lead to a reduction in the aperture ratio of the display substrate 100.

[0424] In some examples, as shown in FIG. 57 , along the first direction X, the minimum distance D between two adjacent sub-pixels P ranges from 20 μm to 23 μm.

[0425] For example, along the first direction X, the minimum distance D between two adjacent sub-pixels P is approximately 19 μm, 20 μm, 21 μm, 22 μm, 23 μm, or 24 μm. The embodiments of the present disclosure are not limited thereto.

[0426] It should be noted that, taking the minimum spacing D between two adjacent sub-pixels P of approximately 19 μm as an example: due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the error floating range of the minimum spacing D between two adjacent sub-pixels P fluctuates within the range of 10%×19 μm, it can also be considered that the minimum spacing D between two adjacent sub-pixels P satisfies and is equal to 19 μm.

[0427] In addition, in other examples, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the error floating range of the minimum spacing D between two adjacent sub-pixels P fluctuates within the range of 5%×19μm, it can also be considered that the minimum spacing D between two adjacent sub-pixels P meets the requirement of being equal to 19μm.

[0428] In some embodiments, returning to FIG. 57 , the plurality of sub-pixels P include a plurality of first sub-pixels P1, a plurality of second sub-pixels P2, and a plurality of third sub-pixels P3. The first sub-pixel P1, the second sub-pixel P2, and the third sub-pixel P3 respectively emit three primary colors of light. For example, the first sub-pixel P1 may emit red light, the second sub-pixel P2 may emit green light, and the third sub-pixel P3 may emit blue light. That is, the first sub-pixel P1 may be a red sub-pixel, the second sub-pixel P2 may be a green sub-pixel, and the third sub-pixel P3 may be a blue sub-pixel. The size of the blue sub-pixel (the third sub-pixel P3) is larger than the size of any sub-pixel P among the plurality of first sub-pixels P1 and the plurality of second sub-pixels P2.

[0429] In some examples, the size of the blue sub-pixel (the third sub-pixel P3 ) is larger than the size of the red sub-pixel (the first sub-pixel P1 ).

[0430] In some examples, the size of the blue sub-pixel (the third sub-pixel P3 ) is larger than the size of the green sub-pixel (the second sub-pixel P2 ).

[0431] In some examples, the inventors have discovered that the brightness of the light-emitting device O in the blue sub-pixel (third sub-pixel P3) is lower than the brightness of the light-emitting device O in either the red sub-pixel (first sub-pixel P1) or the green sub-pixel (second sub-pixel P2). Based on this, the size of the red sub-pixel (third sub-pixel P3) can be set to be larger than the size of the red sub-pixel (first sub-pixel P1), and the size of the blue sub-pixel (third sub-pixel P3) can be set to be larger than the size of the green sub-pixel (second sub-pixel P2).

[0432] Based on this, the size of the blue sub-pixel (third sub-pixel P3) can be increased to compensate for the low brightness of the light-emitting device O in the blue sub-pixel (third sub-pixel P3), which is beneficial to improving the display quality of the display substrate 100.

[0433] In other examples, the sizes of the red sub-pixel (first sub-pixel P1) and the green sub-pixel (second sub-pixel P2) may be set accordingly based on the brightness difference between the red sub-pixel (first sub-pixel P1) and the green sub-pixel (second sub-pixel P2). The embodiments of the present disclosure are not limited thereto.

[0434] FIG64 is a structural diagram of a light-emitting device according to still other embodiments.

[0435] In some embodiments, as shown in FIG64 , the light-emitting device O further includes a hole transport layer (HTL) 60 and an electron transport layer (ETL) 70. The hole transport layer 60 is located between the first electrode 10 and the first light-emitting unit 20 and can be used to improve the mobility of holes generated by the first electrode 10. The electron transport layer 70 is located between the second electrode 50 and the second light-emitting unit 40 and can be used to improve the mobility of electrons generated by the second electrode 50.

[0436] The hole transport layer 60 and the electron transport layer 70 can be used in the light-emitting device O, so that the holes generated by the first electrode 10 and moving toward the first light-emitting unit 20 are combined with the electrons generated by the charge generation stack 30 and moving toward the first light-emitting unit 20 to produce exciton light emission in the first light-emitting unit 20, and the electrons generated by the second electrode 50 and moving toward the second light-emitting unit 40 are combined with the vacancies generated by the charge generation stack 30 and moving toward the second light-emitting unit 40 to produce exciton light emission in the second light-emitting unit 40.

[0437] In other embodiments, the light-emitting device O further includes a hole injection layer (HIL) and an electron injection layer (EIL). The hole injection layer may be located between the first electrode 10 and the hole transport layer 60 to reduce the potential barrier between the first electrode 10 and the hole transport layer 60, and the electron injection layer may be located between the second electrode 50 and the electron transport layer 70 to reduce the potential barrier between the second electrode 50 and the electron transport layer 70.

[0438] Based on this, after the first electrode 10 and the second electrode 50 of the light emitting device O receive a voltage, the first electrode 10 and the second electrode 50 form an electric field.

[0439] The first electrode 10 can generate positively charged holes under the action of an electric field, and the second electrode 50 can generate negatively charged electrons under the action of an electric field. At this time, the holes generated by the first electrode 10 can be injected into the hole transport layer 60 through the hole injection layer, and enter the first light-emitting unit 20 through the hole transport layer 60. Then, they can recombine with electrons generated by the charge generation stack 30 in the first light-emitting unit 20 to form excitons. The excitons return to the ground state through radiative transition and emit photons.

[0440] Accordingly, the electrons generated by the second electrode 50 can be injected into the electron transport layer 70 through the electron injection layer, and enter the second light-emitting unit 40 through the electron transport layer 70. Then, they can recombine with the holes generated from the charge generation stack 30 in the second light-emitting unit 40 to form excitons. The excitons return to the ground state through radiation transition and emit photons. At this time, the light-emitting device O emits light.

[0441] FIG65 is a structural diagram of a light-emitting device according to still other embodiments.

[0442] In some embodiments, as shown in FIG65 , the light-emitting device O further includes a first hole blocking layer (HBL) 80 and a second hole blocking layer (HBL) 90. The first hole blocking layer 80 is located between the first light-emitting unit 20 and the charge generation stack 30, and the second hole blocking layer 90 is located between the electron transport layer 70 and the second light-emitting unit 40.

[0443] When holes generated by the first electrode 10 migrate to the first light-emitting unit 20, the electric field causes the holes to continue migrating toward the charge generation stack 30, resulting in a decrease in the hole concentration within the first light-emitting unit 20 and a reduction in the luminescence effect. The first hole blocking layer 80 prevents holes from migrating from the first light-emitting unit 20 to the charge generation stack 30.

[0444] Accordingly, when holes generated by the charge generation stack 30 migrate to the second light-emitting unit 40, the electric field causes the holes to continue migrating toward the second electrode 50, causing the hole concentration in the second light-emitting unit 40 to decrease and the luminescence effect to deteriorate. The second hole blocking layer 90 prevents holes from migrating from the second light-emitting unit 40 to the second electrode 50.

[0445] In some other embodiments, the light-emitting device O further includes a first electron blocking layer (EBL) and a second electron blocking layer (EBL). The first electron blocking layer may be located between the first hole transport layer 60 and the first light-emitting unit 20. The second electron blocking layer may be located between the second light-emitting unit 40 and the second hole transport layer 70.

[0446] When electrons generated by the charge generation stack 30 migrate to the first light-emitting unit 20, the presence of the electric field causes the electrons to continue migrating toward the first electrode 10, resulting in a decrease in the electron concentration within the first light-emitting unit 20 and a reduction in the luminescence effect. The first electron blocking layer can prevent electrons from migrating from the first light-emitting unit 20 to the first hole transport layer 60, that is, preventing electrons from migrating from the first light-emitting unit 20 to the first electrode 10.

[0447] Accordingly, when electrons generated by the second electrode 50 migrate to the second light-emitting unit 40, the electric field causes the electrons to continue migrating toward the charge generation stack 30, causing the electron concentration in the second light-emitting unit 40 to decrease and the luminescence effect to decrease. The first electron blocking layer can prevent electrons from migrating from the second light-emitting unit 40 to the second hole transport layer 70, that is, preventing electrons from migrating from the second light-emitting unit 40 to the charge generation stack 30.

[0448] The above description is merely a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that a person skilled in the art can conceive within the technical scope disclosed in the present disclosure should be included within the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. A display substrate, comprising: A plurality of sub-pixels arranged in a plurality of rows and columns, each of the sub-pixels comprising a light-emitting device, the light-emitting device comprising a first electrode, a first light-emitting unit, a charge generation stack, a second light-emitting unit, and a second electrode stacked in sequence; Among them, along the first direction, the colors of light emitted by the light-emitting devices in two adjacent sub-pixels are different, and the proportion of impurity peaks in the emission peaks in the emission spectrum corresponding to the light emitted by the light-emitting devices in at least some of the sub-pixels is less than or equal to 5%.

2. The display substrate according to claim 1, wherein: When the grayscale of the light-emitting device in the sub-pixel is higher than the threshold grayscale, the proportion of the impurity peak of the emission peak in the light-emitting spectrum corresponding to the light emitted by the light-emitting device in at least part of the sub-pixels is approximately 0%; When the grayscale of the light-emitting device in the sub-pixel is lower than the threshold grayscale, the proportion of the impurity peak of the emission peak in the light-emitting spectrum corresponding to the light emitted by the light-emitting device in at least part of the sub-pixels is less than or equal to 4%.

3. The display substrate according to claim 1 or 2, wherein: The lateral resistance value of the charge generation stack is greater than or equal to 100 GΩ / μm2.

4. The display substrate according to claim 3, wherein: The lateral resistance of the charge generation stack is less than or equal to 260 GΩ / μm2.

5. The display substrate according to any one of claims 1 to 4, wherein: The charge generation stack comprises an n-type charge generation layer and a p-type charge generation layer, wherein the p-type charge generation layer is located on a side of the n-type charge generation layer away from the first electrode; The charge generation stack is configured such that the n-type charge generation layer transfers electrons to the first light emitting unit and the p-type charge generation layer transfers holes to the second light emitting unit.

6. The display substrate according to claim 5, wherein: The minimum distance between the side of the n-type charge generation layer close to the p-type charge generation layer and the first light-emitting unit is smaller than the minimum distance between the side of the first electrode far from the first light-emitting unit and the first light-emitting unit.

7. The display substrate according to claim 6, wherein: The thickness of the n-type charge generation layer ranges from 8. The display substrate according to claim 7, wherein: The thickness of the n-type charge generation layer ranges from 9. The display substrate according to any one of claims 5 to 8, wherein: The n-type charge generation layer is doped with a first impurity, and the doping concentration of the first impurity in the n-type charge generation layer has a value range of 0.5% to 2%.

10. The display substrate according to claim 9, wherein: The p-type charge generation layer is doped with a second impurity, and the doping concentration of the second impurity in the p-type charge generation layer is in a range of 5% to 15%.

11. The display substrate according to claim 10, wherein: When the doping concentration of the first impurity in the n-type charge generation layer is in the range of 0.5% to 1%, the doping concentration of the second impurity in the p-type charge generation layer is in the range of 10% to 15%; or, When the doping concentration of the first impurity in the n-type charge generation layer is in the range of 1% to 2%, the doping concentration of the second impurity in the p-type charge generation layer is in the range of 5% to 10%.

12. The display substrate according to any one of claims 5 to 11, wherein: When the lateral resistance value of the charge generation stack is in the range of 180 GΩ / μm2 to 260 GΩ / μm2, the doping concentration of the second impurity in the p-type charge generation layer is in the range of 5% to 10%; or, When the lateral resistance value of the charge generation stack is in the range of 100 GΩ / μm2 to 180 GΩ / μm2, the doping concentration of the second impurity in the p-type charge generation layer is in the range of 10% to 15%.

13. The display substrate according to any one of claims 1 to 12, wherein: Along the first direction, a minimum distance between two adjacent sub-pixels is greater than or equal to 19 μm.

14. The display substrate according to claim 13, wherein: Along the first direction, a minimum distance between two adjacent sub-pixels is less than or equal to 24 μm.

15. The display substrate according to any one of claims 5 to 14, wherein: The thickness of the p-type charge generation stack ranges from 16. The display substrate according to any one of claims 1 to 15, wherein: The light emitting device further comprises: a hole transport layer, located between the first electrode and the first light-emitting unit; and, The electron transport layer is located between the second electrode and the second light-emitting unit.

17. The display substrate according to claim 16, wherein: The light emitting device further comprises: A first hole blocking layer is located between the first light emitting unit and the charge generation stack; and, The second hole blocking layer is located between the electron transport layer and the second light emitting unit.

18. The display substrate according to any one of claims 1 to 17, wherein: The plurality of sub-pixels include a plurality of first sub-pixels, a plurality of second sub-pixels, and a plurality of third sub-pixels emitting light of different colors; The third sub-pixel is a blue sub-pixel, and a size of the blue sub-pixel is greater than a size of any sub-pixel among the plurality of first sub-pixels and the plurality of second sub-pixels.

19. A display panel, comprising: The display substrate according to any one of claims 1 to 18.

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