Semiconductor device, semiconductor module, and vehicle

Abstract

This semiconductor device comprises: a substrate of which at least a portion is a conductor; a semiconductor element that is bonded to one side of the substrate in a first direction; a sealing resin that covers the semiconductor element and at least a portion of the substrate; and a protruding body that protrudes in the first direction from the sealing resin. The protruding body is located on the opposite side of the substrate from the semiconductor element in the first direction.

Description

Semiconductor device, semiconductor module and vehicle

[0001] The present disclosure relates to a semiconductor device, a semiconductor module including the semiconductor device, and a vehicle equipped with the semiconductor device.

[0002] Patent Document 1 discloses an example of a semiconductor device including a first conductive plate and a second conductive plate to which two switching elements are individually conductively connected, a first input terminal connected to the first conductive plate, an output terminal connected to the second conductive plate, a second input terminal, a first conductive member, and a second conductive member. The first conductive member is conductively connected to the switching element conductively connected to the first conductive plate and to the second conductive plate. The second conductive member is conductively connected to the switching element conductively connected to the second conductive plate and to the second input terminal. This forms a half-bridge circuit including two switching elements in the semiconductor device. Therefore, power can be converted using the semiconductor device.

[0003] When using the semiconductor device disclosed in Patent Document 1, the semiconductor device is attached to a heat dissipation member to efficiently dissipate heat generated from each of the two switching elements to the outside. Here, the semiconductor device further includes a sealing resin that covers at least a portion of each of the first and second conductive plates and the two switching elements. The semiconductor device is attached to the heat dissipation member, for example, by fixing the sealing resin to the heat dissipation member using a metal spring. However, this attachment method increases the number of parts and requires a considerable amount of time for attachment.

[0004] International Publication No. 2022 / 030244

[0005] [Summary] An object of the present disclosure is to provide an improved semiconductor device compared to conventional devices. In particular, in view of the above circumstances, an object of the present disclosure is to provide a semiconductor device that can be more easily attached to a heat dissipation member.

[0006] A semiconductor device provided by a first aspect of the present disclosure includes a substrate at least a portion of which is a conductor, a semiconductor element bonded to one side of the substrate in a first direction, a sealing resin covering at least a portion of the substrate and the semiconductor element, and a protrusion protruding from the sealing resin in the first direction, the protrusion being located on the opposite side of the substrate from the semiconductor element in the first direction.

[0007] A semiconductor module provided by a second aspect of the present disclosure includes a heat dissipation member and a semiconductor device. In the semiconductor device, the configuration of the convex body provided by the semiconductor device provided by the first aspect of the present disclosure is limited. The sealing resin provided by the semiconductor device has a first surface facing a first direction. The base provided by the semiconductor device has a second surface exposed from the first surface. The convex body has a third surface facing the same side as the first surface in the first direction. The convex body has a first portion protruding from the first surface and a second portion including the third surface and located on the opposite side of the sealing resin from the first portion in the first direction. As viewed in the first direction, the second portion is located inward from the periphery of the first portion. The heat dissipation member has a main surface facing the sealing resin. The heat dissipation member is provided with an engagement portion recessed from the main surface. The convex body is fitted into the engagement portion.

[0008] A vehicle provided by a third aspect of the present disclosure includes a drive system, a storage battery that supplies power to the drive system, an on-board charger that supplies power to the storage battery, and a semiconductor device. The semiconductor device is included in a circuit that constitutes the on-board charger. The semiconductor device further includes a power terminal and a signal terminal, compared to the semiconductor device provided by the first aspect of the present disclosure. A semiconductor element included in the semiconductor device is conductively bonded to a substrate included in the semiconductor device. The power terminal is connected to the substrate. The signal terminal is electrically connected to the semiconductor element. A sealing resin included in the semiconductor device has a first side surface facing in a direction perpendicular to a first direction. Each of the power terminal and the signal terminal protrudes from the first side surface.

[0009] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0010] FIG. 1 is a perspective view of a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a plan view of the semiconductor device shown in FIG. 1. FIG. 3 is a plan view corresponding to FIG. 2, seen through a sealing resin. FIG. 4 is a bottom view of the semiconductor device shown in FIG. 1. FIG. 5 is a front view of the semiconductor device shown in FIG. 1. FIG. 6 is a right side view of the semiconductor device shown in FIG. 1. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 3. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 3. FIG. 10 is a partial enlarged view of FIG. 7, showing a first semiconductor element and its vicinity. FIG. 11 is a partial enlarged view of FIG. 7, showing a second semiconductor element and its vicinity. FIG. 12 is a partial enlarged view of FIG. 8. FIG. 13 is a partial enlarged view of FIG. 9. FIG. 14 is a partial enlarged view of FIG. 7, showing a protrusion and its vicinity. FIG. 15 is a partial enlarged cross-sectional view of a semiconductor device according to a first modified example of the first embodiment of the present disclosure. FIG. 16 is a partially enlarged cross-sectional view of a semiconductor device according to a second modified example of the first embodiment of the present disclosure. FIG. 17 is a schematic diagram of a vehicle equipped with the semiconductor device shown in FIG. 1 . FIG. 18 is a cross-sectional view of a semiconductor module according to the first embodiment of the present disclosure. FIG. 19 is a bottom view of a semiconductor device according to a second embodiment of the present disclosure. FIG. 20 is a partially enlarged view of FIG. 19 , showing a first convex body and its vicinity. FIG. 21 is a partially enlarged view of FIG. 19 , showing a second convex body and its vicinity. FIG. 22 is a partially enlarged plan view of a semiconductor device according to a first modified example of the second embodiment of the present disclosure. FIG. 23 is a partially enlarged cross-sectional view of a semiconductor device according to a second modified example of the second embodiment of the present disclosure. FIG. 24 is a bottom view of a semiconductor device according to a third modified example of the second embodiment of the present disclosure. FIG. 25 is a bottom view of a semiconductor device according to a third embodiment of the present disclosure. FIG. 26 is a partially enlarged view of FIG. 25 . FIG. 27 is a bottom view of a semiconductor device according to a fourth embodiment of the present disclosure. FIG. 28 is a cross-sectional view of the semiconductor device shown in FIG. 27 . FIG. 29 is a cross-sectional view of a semiconductor module according to the second embodiment of the present disclosure. Fig. 30 is a partially enlarged view of Fig. 29. Fig. 31 is a plan view of the semiconductor device according to the fifth embodiment of the present disclosure, seen through the sealing resin. Fig. 32 is a bottom view of the semiconductor device shown in Fig. 31.33 is a cross-sectional view taken along line XXXIII-XXXIII in FIG. 31. FIG.

[0011] DETAILED DESCRIPTION The present disclosure will be described in detail with reference to the accompanying drawings.

[0012] First Embodiment: A semiconductor device A10 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 14 . The semiconductor device A10 includes two substrates 10, a first power terminal 11, a second power terminal 12, a third power terminal 13, two first signal terminals 14, two second signal terminals 15, a plurality of semiconductor elements 21, a first conductive member 31, a second conductive member 32, a sealing resin 50, and a plurality of protrusions 60. The semiconductor device A10 also includes two first wires 41, two second wires 42, two first relay wires 43, and two second relay wires 44. For ease of understanding, FIG. 3 shows the sealing resin 50 in a perspective view. In FIG. 3, the transparent sealing resin 50 is indicated by an imaginary line (double-dashed line).

[0013] In the description of the semiconductor device A10, for convenience, for example, the normal direction of each mounting surface 101 of two substrates 10 described below will be referred to as the "first direction z." An example of a direction perpendicular to the first direction z will be referred to as the "second direction x." A direction perpendicular to the first direction z and the second direction x will be referred to as the "third direction y."

[0014] The semiconductor device A10 converts a DC power supply voltage applied to the second power terminal 12 and the third power terminal 13 into AC power using a plurality of semiconductor elements 21. The converted AC power is input to a power supply target such as a motor from the first power terminal 11. The semiconductor device A10 is used in a power conversion circuit such as an inverter.

[0015] As shown in FIGS. 3 , 7 , and 8 , the two substrates 10 include a first substrate 10A and a second substrate 10B. The first substrate 10A and the second substrate 10B are spaced apart from each other in the second direction x. At least a portion of each of the two substrates is a conductor. In the semiconductor device A10, each of the two substrates is entirely made of metal. In this case, the two substrates 10, along with the first power terminal 11, the second power terminal 12, the third power terminal 13, the two first signal terminals 14, and the two second signal terminals 15, are obtained from the same lead frame. The lead frame contains copper (Cu) or a copper alloy. Therefore, the two substrates 10, the first power terminal 11, the second power terminal 12, the two first signal terminals 14, and the two second signal terminals 15 each contain copper. Each of the two substrates 10 has a mounting surface 101 and a second surface 102. The mounting surface 101 and the second surface 102 face in opposite directions in the first direction z. The second surface 102 of each of the two bases 10 is exposed from the sealing resin 50.

[0016] 3 and 12, the first base material 10A is provided with a first seat portion 103. The first seat portion 103 is recessed from the mounting surface 101 of the first base material 10A. As a result, a step is formed between the mounting surface 101 and the first seat portion 103 of the first base material 10A.

[0017] As shown in FIGS. 7 to 9 , the sealing resin 50 covers the semiconductor elements 21, the first conductive members 31, and the second conductive members 32. The sealing resin 50 also covers portions of the two substrates 10, the third power terminal 13, the first power terminal 11, the second power terminal 12, the two first signal terminals 14, and the two second signal terminals 15. As shown in FIG. 2 , the dimension of the sealing resin 50 in the second direction x is greater than the dimension of the sealing resin 50 in the third direction y. The sealing resin 50 has electrical insulation properties. The sealing resin 50 is made of a material containing, for example, black epoxy resin. The sealing resin 50 has a top surface 51, a first surface 52, a third side surface 55, a second side surface 54, two first side surfaces 53, a plurality of recesses 56, and a groove 57.

[0018] 7 and 8, the top surface 51 faces the same side as the mounting surface 101 of each of the two base materials 10 in the first direction z. As shown in Figures 7 to 9, the first surface 52 faces the opposite side from the top surface 51 in the first direction z. As shown in Figure 4, the second surface 102 of each of the two base materials 10 is exposed from the first surface 52.

[0019] 2, 4, and 6, the first side surface 53 and the second side surface 54 are spaced apart from each other in the third direction y. The first side surface 53 and the second side surface 54 face opposite each other in the third direction y and extend in the second direction x. The second side surface 54 and the first side surface 53 are connected to the top surface 51 and the first surface 52. As shown in FIG. 5, the third power terminal 13, the first power terminal 11, the second power terminal 12, the two first signal terminals 14, and the two second signal terminals 15 each protrude from the first side surface 53.

[0020] 2 , 4 , and 5 , the two third side surfaces 55 are spaced apart from each other in the second direction x. Each of the two third side surfaces 55 faces the second direction x and extends in the third direction y. Each of the two third side surfaces 55 is connected to the top surface 51 and the first surface 52.

[0021] 1, 2, and 4, the recesses 56 are recessed from the first side surface 53 in the third direction y and penetrate the sealing resin 50 in the first direction z. In the second direction x, the recesses 56 are individually provided between the second power terminal 12 and a second detection terminal 15B (described later), between the third power terminal 13 and the second power terminal 12, between the third power terminal 13 and the first power terminal 11, and between the first power terminal 11 and a first detection terminal 15A (described later).

[0022] 4 and 5 , the groove 57 is recessed from the first surface 52 in the first direction z and extends in the third direction y. Both sides of the groove 57 in the third direction y are connected to the second side surface 54 and the first side surface 53. When viewed in the first direction z, the groove 57 defines the second surface 102 of each of the two substrates 10.

[0023] As shown in FIGS. 3 and 7 to 9 , the multiple semiconductor elements 21 are bonded to each of the two bases 10. In the semiconductor device A10, the multiple semiconductor elements 21 include two first semiconductor elements 21A and two second semiconductor elements 21B. The two first semiconductor elements 21A are bonded to the mounting surface 101 of the first base 10A. The two second semiconductor elements 21B are bonded to the mounting surface 101 of the second base 10B. The multiple semiconductor elements 21 are, for example, MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). Alternatively, the multiple semiconductor elements 21 may be switching elements such as IGBTs (Insulated Gate Bipolar Transistors) or diodes. In the description of the semiconductor device A10, the multiple semiconductor elements 21 are n-channel MOSFETs with a vertical structure. The multiple semiconductor elements 21 include compound semiconductor substrates. The compound semiconductor substrate has a composition including silicon carbide (SiC). As shown in Figures 3, 10 and 11, each of the semiconductor elements 21 has a first electrode 211, a second electrode 212, a third electrode 213, and two fourth electrodes 214.

[0024] 10 and 11 , the first electrode 211 is located on the opposite side of the two bases 10 from the side facing the mounting surface 101 in the first direction z. A current corresponding to the power converted by the semiconductor element 21 flows through the first electrode 211. In other words, the first electrode 211 corresponds to the source electrode of the semiconductor element 21.

[0025] 10 and 11 , the second electrode 212 faces the mounting surface 101 of one of the two bases 10. A current corresponding to the power before being converted by the semiconductor element 21 flows through the second electrode 212. In other words, the second electrode 212 corresponds to the drain electrode of the semiconductor element 21.

[0026] 10 and 11 , the third electrode 213 is located on the same side as the first electrode 211 in the first direction z. A gate voltage for driving the semiconductor element 21 is applied to the third electrode 213. When viewed in the first direction z, the area of ​​the third electrode 213 is smaller than the area of ​​the first electrode 211.

[0027] 3 , the two fourth electrodes 214 are located on the same side as the first electrode 211 in the first direction z. The two fourth electrodes 214 are located on opposite sides of the third electrode 213 in the third direction y. A voltage having the same potential as the voltage applied to the first electrode 211 is applied to each of the two fourth electrodes 214.

[0028] As shown in FIGS. 10 and 11 , the first bonding layer 29 is located between the mounting surface 101 of the first substrate 10A and the two first semiconductor elements 21A, and between the mounting surface 101 of the second substrate 10B and the two second semiconductor elements 21B. The first bonding layer 29 is, for example, solder. Alternatively, the first bonding layer 29 may be sintered metal. The first bonding layer 29 conductively bonds the mounting surface 101 of the first substrate 10A to the second electrodes 212 of the two first semiconductor elements 21A. This allows the second electrodes 212 of the two first semiconductor elements 21A to be electrically connected to the first substrate 10A. Furthermore, the first bonding layer 29 conductively bonds the mounting surface 101 of the second substrate 10B to the second electrodes 212 of the two second semiconductor elements 21B. As a result, the second electrodes 212 of the two second semiconductor elements 21B are electrically connected to the second base material 10B.

[0029] As shown in FIG. 3 , the first power terminal 11 is connected to the first base 10A. Therefore, the first power terminal 11 is electrically connected to the second electrodes 212 of the two first semiconductor elements 21A via the first base 10A. AC power converted by the multiple semiconductor elements 21 is output from the first power terminal 11. The first power terminal 11 is located on the opposite side of the third power terminal 13 from the second power terminal 12 and adjacent to the third power terminal 13. The first power terminal 11 has a mounting portion 111 and a covering portion 112. The mounting portion 111 protrudes from the first side surface 53 of the sealing resin 50. The mounting portion 111 extends in the third direction y. The covering portion 122 connects the mounting portion 111 to the first base 10A. The covering portion 112 is covered by the sealing resin 50. The covering portion 112 is bent in the first direction z toward the side approaching the mounting surface 101 of the first base material 10A.

[0030] As shown in FIG. 3 , the second power terminal 12 is connected to the second substrate 10B. Therefore, the second power terminal 12 is electrically connected to the second electrodes 212 of the two second semiconductor elements 21B via the second substrate 10B. The second power terminal 12 is a P terminal (positive electrode) to which a DC power supply voltage to be converted is applied. The second power terminal 12 is located on the opposite side of the third power terminal 13 from the first power terminal 11 and adjacent to the third power terminal 13. The second power terminal 12 has a mounting portion 121 and a covering portion 122. The mounting portion 121 protrudes from the first side surface 53 of the sealing resin 50. The mounting portion 121 extends in the third direction y. The covering portion 122 connects the mounting portion 121 to the second substrate 10B. The covering portion 122 is covered by the sealing resin 50. The covering portion 122 is bent in the first direction z toward the side approaching the mounting surface 101 of the second base material 10B.

[0031] 2 and 3 , the third power terminal 13 is located on the opposite side of the second side surface 54 of the sealing resin 50 with respect to the two base materials 10 in the third direction y. The third power terminal 13 is spaced apart from the two base materials 10. The third power terminal 13 is electrically connected to the first electrodes 211 of the two first semiconductor elements 21A. The third power terminal 13 is an N-terminal (negative electrode) to which a DC power supply voltage to be converted into power is applied.

[0032] 3 and 9 , the third power terminal 13 has a mounting portion 131 and a covering portion 132. The mounting portion 131 protrudes from the first side surface 53 of the sealing resin 50. The mounting portion 131 extends in the third direction y. The covering portion 132 is connected to the mounting portion 131. The covering portion 132 is covered by the sealing resin 50.

[0033] 3 and 13 , a second seat portion 133 is provided on the covering portion 132 of the third power terminal 13. The second seat portion 133 is recessed in the first direction z from a side where a first intermediate portion 313 of a first conductive member 31 (described later) is located in the first direction z.

[0034] 2 and 3 , the two first signal terminals 14 are located on the opposite side of the sealing resin 50 from the second side surface 54 with respect to the two base materials 10 in the third direction y. As shown in Fig. 3 , the two first signal terminals 14 extend in the third direction y. The two first signal terminals 14 sandwich the first power terminal 11, the second power terminal 12, the third power terminal 13, and the two second signal terminals 15 between them in the second direction x. The two first signal terminals 14 include a first gate terminal 14A and a second gate terminal 14B.

[0035] 3 , each of the two first signal terminals 14 has a mounting portion 141 and a covering portion 142. The mounting portion 141 protrudes from the first side surface 53 of the sealing resin 50. The mounting portion 141 extends in the third direction y. The covering portion 142 is connected to the mounting portion 141. The covering portion 142 is covered by the sealing resin 50.

[0036] 3, the first gate terminal 14A is located closer to the first substrate 10A than to the second substrate 10B. The first gate terminal 14A is electrically connected to the third electrodes 213 of the two first semiconductor elements 21A. A gate voltage for driving the two first semiconductor elements 21A is applied to the first gate terminal 14A.

[0037] 3, the second gate terminal 14B is located closer to the second substrate 10B than to the first substrate 10A. The second gate terminal 14B is electrically connected to the third electrodes 213 of the two second semiconductor elements 21B. A gate voltage for driving the two second semiconductor elements 21B is applied to the second gate terminal 14B.

[0038] 2 and 3 , the two second signal terminals 15 are located on the opposite side of the sealing resin 50 from the second side surface 54 with respect to the two base materials 10 in the third direction y. As shown in Fig. 3 , the two second signal terminals 15 extend in the third direction y. The two second signal terminals 15 sandwich the first power terminal 11, the second power terminal 12, and the third power terminal 13 between them in the second direction x. The two second signal terminals 15 include a first detection terminal 15A and a second detection terminal 15B.

[0039] 3 , each of the two second signal terminals 15 has a mounting portion 151 and a covering portion 152. The mounting portion 151 protrudes from the first side surface 53 of the sealing resin 50. The mounting portion 151 extends in the third direction y. The covering portion 152 is connected to the mounting portion 151. The covering portion 152 is covered by the sealing resin 50.

[0040] 2 and 3, the first detection terminal 15A is located between the first power terminal 11 and the first gate terminal 14A. The first detection terminal 15A is electrically connected to the two fourth electrodes 214 of each of the two first semiconductor elements 21A. A voltage having the same potential as the voltage applied to each of the first electrodes 211 of the two first semiconductor elements 21A is applied to the first detection terminal 15A.

[0041] 2 and 3, the second detection terminal 15B is located between the second power terminal 12 and the second gate terminal 14B. The second detection terminal 15B is electrically connected to the two fourth electrodes 214 of each of the two second semiconductor elements 21B. A voltage having the same potential as the voltage applied to the first electrodes 211 of each of the two second semiconductor elements 21B is applied to the second detection terminal 15B.

[0042] As shown in Fig. 5 , the heights h of the mounting portion 111 of the third power terminal 13, the mounting portion 121 of the first power terminal 11, and the mounting portion 131 of the second power terminal 12 are all equal. As shown in Fig. 6 , when viewed in the second direction x, the mounting portion 141 of either of the two first signal terminals 14 overlaps with the mounting portion 111 of the third power terminal 13, the mounting portion 121 of the first power terminal 11, and the mounting portion 131 of the second power terminal 12.

[0043] As shown in FIGS. 3 and 9 , the first conductive member 31 is conductively joined to the first electrodes 211 of the two first semiconductor elements 21A and the second seat portion 133 of the third power terminal 13. This electrically connects the third power terminal 13 to the first electrodes 211 of the two first semiconductor elements 21A. The first conductive member 31 contains copper or a copper alloy. The first conductive member 31 is a metal clip. The first conductive member 31 has two first joint portions 311, a second joint portion 312, and a first intermediate portion 313.

[0044] 3 and 10 , the two first bonding portions 311 are individually conductively bonded to the first electrodes 211 of the two first semiconductor elements 21A. Each of the two first bonding portions 311 is bifurcated and spaced apart from each other in the third direction y. As shown in FIG. 3 , the two first bonding portions 311 are spaced apart from each other in the third direction y.

[0045] 3 and 13 , the second joint portion 312 is conductively joined to the second seat portion 133 of the third power terminal 13. The second joint portion 312 extends in the second direction x. At least a portion of the second joint portion 312 is housed in the second seat portion 133.

[0046] 3 , the first intermediate portion 313 is bent in a hook shape when viewed in the first direction z. When viewed in the first direction z, the first intermediate portion 313 overlaps the mounting surface 101 of the first base material 10A. The first intermediate portion 313 connects the two first bonding portions 311 and the second bonding portion 312.

[0047] 7 to 10, the semiconductor device A10 further includes a second bonding layer 33. The second bonding layer 33 conductively bonds the first electrodes 211 of the two first semiconductor elements 21A to the two first bonding portions 311. The second bonding layer 33 is, for example, solder. Alternatively, the second bonding layer 33 may be a sintered metal.

[0048] 9 and 13, the semiconductor device A10 further includes a third bonding layer 34. The third bonding layer 34 electrically connects the second seat portion 133 of the third power terminal 13 to the second bonding portion 312. The third bonding layer 34 is, for example, solder. Alternatively, the third bonding layer 34 may be a sintered metal.

[0049] As shown in FIGS. 3 and 8 , the second conductive member 32 is conductively bonded to the first electrodes 211 of the two second semiconductor elements 21B and the first seat portion 103 of the first base material 10A. This allows the first electrode 211 of each of the two second semiconductor elements 21B to be electrically connected to the first base material 10A and the second electrode 212 of each of the two first semiconductor elements 21A. The second conductive member 32 contains copper or a copper alloy. The second conductive member 32 is a metal clip. The second conductive member 32 has two third bonding portions 321, a fourth bonding portion 322, and a second intermediate portion 323.

[0050] 3 and 11 , the two third bonding portions 321 are individually conductively bonded to the first electrodes 211 of the two second semiconductor elements 21B. Each of the two third bonding portions 321 is bifurcated and spaced apart from each other in the third direction y. As shown in FIG. 3 , the two third bonding portions 321 are spaced apart from each other in the third direction y.

[0051] 3 and 12 , the fourth joint portion 322 is conductively joined to the first seat portion 103 of the first base material 10A. The fourth joint portion 322 extends in the third direction y. At least a portion of the fourth joint portion 322 is accommodated in the first seat portion 103.

[0052] 3, the second intermediate portion 323 connects the two third bonding portions 321 and the fourth bonding portion 322. The second intermediate portion 323 straddles the first base material 10A and the second base material 10B.

[0053] 7, 8, and 11, the semiconductor device A10 further includes a fourth bonding layer 35. The fourth bonding layer 35 conductively bonds the first electrodes 211 of the two second semiconductor elements 21B to the two third bonding portions 321. The fourth bonding layer 35 is, for example, solder. Alternatively, the fourth bonding layer 35 may be a sintered metal.

[0054] 8 and 12, the semiconductor device A10 further includes a fifth bonding layer 36. The fifth bonding layer 36 electrically conductively bonds the first seat portion 103 of the first base material 10A to the fourth bonding portion 322. The fifth bonding layer 36 is, for example, solder. Alternatively, the fifth bonding layer 36 may be a sintered metal.

[0055] 3, one of the two first wires 41 is conductively bonded to the third electrode 213 of the first semiconductor element 21A that is located closest to the first gate terminal 14A, and to the covering portion 142 of the first gate terminal 14A. As shown in FIG. 3, the other of the two first wires 41 is conductively bonded to the third electrode 213 of the second semiconductor element 21B that is located closest to the second gate terminal 14B, and to the covering portion 142 of the second gate terminal 14B.

[0056] As shown in FIG. 3 , one of the two first relay wires 43 is conductively bonded to the third electrode 213 of one first semiconductor element 21A and the third electrode 213 of the other first semiconductor element 21A. As shown in FIG. 3 , the other of the two first relay wires 43 is conductively bonded to the third electrode 213 of one second semiconductor element 21B and the third electrode 213 of the other second semiconductor element 21B. The two first wires 41 and the two first relay wires 43 electrically connect the first gate terminal 14A to the third electrodes 213 of the two first semiconductor elements 21A. In addition, the second gate terminal 14B is electrically connected to the third electrodes 213 of the two second semiconductor elements 21B.

[0057] 3, one of the two second wires 42 is conductively joined to one of the two fourth electrodes 214 of the first semiconductor element 21A that is located closest to the first detection terminal 15A, and to the covering portion 152 of the first detection terminal 15A. As shown in FIG. 3, the other of the two second wires 42 is conductively joined to one of the two fourth electrodes 214 of the second semiconductor element 21B that is located closest to the second detection terminal 15B, and to the covering portion 152 of the second detection terminal 15B.

[0058] As shown in FIG. 3 , one of the two second relay wires 44 is conductively bonded to one of the two fourth electrodes 214 of one first semiconductor element 21A and one of the two fourth electrodes 214 of the other first semiconductor element 21A. As shown in FIG. 3 , one of the two second relay wires 44 is conductively bonded to one of the two fourth electrodes 214 of one second semiconductor element 21B and one of the two fourth electrodes 214 of the other second semiconductor element 21B. Through the two second wires 42 and the two second relay wires 44, the first detection terminal 15A is electrically connected to the two fourth electrodes 214 of each of the two first semiconductor elements 21A. In addition, the second detection terminal 15B is electrically connected to the two fourth electrodes 214 of each of the two second semiconductor elements 21B.

[0059] As shown in FIGS. 7 to 9 , the multiple protrusions 60 protrude from the first surface 52 of the sealing resin 50 in the first direction z. The multiple protrusions 60 are located on the opposite side of the multiple semiconductor elements 21 in the first direction z, with the two bases 10 as the reference. In the semiconductor device A10, the multiple protrusions 60 form two groups arranged in the third direction y. The two groups are located on the opposite side of the two bases 10 in the second direction x. Each of the multiple protrusions 60 is integral with the sealing resin 50. The multiple protrusions 60 are made of the same material as the sealing resin 50. Therefore, the composition of the multiple protrusions 60 is the same as the composition of the sealing resin 50.

[0060] 7 to 9 , each of the multiple protrusions 60 has a third surface 621 and a circumferential surface 622. The third surface 621 faces the same side as the first surface 52 of the sealing resin 50 in the first direction z. In the first direction z, the third surface 621 is located farther from the first surface 52 than the second surfaces 102 of the two bases 10 are. As shown in FIG. 4 , the circumferential surface 622 surrounds the third surface 621 when viewed in the first direction z. In the semiconductor device A10, the in-plane direction of the circumferential surface 622 includes the first direction z.

[0061] As shown in FIGS. 4 , 7 , and 8 , each of the multiple protrusions 60 has a first portion 61 and a second portion 62. The first portion 61 protrudes from the first surface 52 of the sealing resin 50. In the semiconductor device A10, the first portions 61 of two adjacent protrusions 60 in the third direction y are connected to each other. Alternatively, the first portions 61 of two adjacent protrusions 60 in the third direction y may be separated from each other. The first portion 61 includes a fourth surface 611 facing the same side as the first surface 52 in the first direction z. In the first direction z, the second surface 102 of each of the two bases 10 is located closer to the first surface 52 than the fourth surface 611.

[0062] 7 and 8 , the second portion 62 is located on the opposite side of the sealing resin 50 from the first portion 61 in the first direction z. The second portion 62 protrudes from a fourth surface 611 of the first portion 61. The second portion 62 includes a third surface 621 and a peripheral surface 622. As shown in FIG. 4 , the second portion 62 is located inward from the peripheral edge 612 of the first portion 61 when viewed in the first direction z. As shown in FIG. 14 , a dimension L2 of the second portion 62 in the first direction z is greater than a dimension L1 of the first portion 61 in the first direction z.

[0063] Next, a semiconductor device A11 according to a first modified example of the first embodiment of the present disclosure will be described with reference to Fig. 15. Here, the cross-sectional position in Fig. 15 corresponds to the cross-sectional position in Fig. 14.

[0064] In the semiconductor device A11, the configuration of the multiple protrusions 60 differs from that of the semiconductor device A10. As shown in Fig. 15 , the peripheral surface 622 of each of the multiple protrusions 60 is inclined with respect to the first direction z. The size of a cross section of each of the multiple protrusions 60 perpendicular to the first direction z decreases from the first surface 52 of the sealing resin 50 to the third surface 621 of one of the corresponding multiple protrusions 60.

[0065] Next, a semiconductor device A12 according to a second modified example of the first embodiment of the present disclosure will be described with reference to Fig. 16. Here, the cross-sectional position in Fig. 16 corresponds to the cross-sectional position in Fig. 14.

[0066] 16 , the third surface 621 of each of the plurality of protrusions 60 is convex in the first direction z toward the side toward which the top surface 51 of the sealing resin 50 faces. As a result, at least a portion of the third surface 621 is a curved surface.

[0067] Next, a vehicle C equipped with the semiconductor device A10 will be described with reference to Fig. 17. The vehicle C is, for example, an electric vehicle (EV).

[0068] As shown in FIG. 17 , a vehicle C includes an on-board charger 91, a storage battery 92, and a drive system 93. The on-board charger 91 is supplied with power wirelessly from a power supply facility (not shown) installed outdoors. Alternatively, power may be supplied from the power supply facility to the on-board charger 91 via a wired connection. The on-board charger 91 is configured with a step-up DC-DC converter. The semiconductor device A10 is included in the converter circuit. The voltage of the power supplied to the on-board charger 91 is stepped up by the converter and then supplied to the storage battery 92. The stepped-up voltage is, for example, 600 V.

[0069] The drive system 93 drives the vehicle C. The drive system 93 includes an inverter 931 and a drive source 932. The power stored in the storage battery 92 is supplied to the inverter 931. The power supplied from the storage battery 92 to the inverter 931 is DC power. Alternatively, unlike the power system shown in FIG. 17 , a step-up DC-DC converter may be further provided between the storage battery 92 and the inverter 931. The inverter 931 converts DC power into AC power. The inverter 931 is electrically connected to the drive source 932. The drive source 932 includes an AC motor and a transmission. When the AC power converted by the inverter 931 is supplied to the drive source 932, the AC motor rotates and the rotation is transmitted to the transmission. The transmission appropriately reduces the rotation speed transmitted from the AC motor and then rotates the drive shaft of the vehicle C. This drives the vehicle C.

[0070] Next, a semiconductor module B10 including the semiconductor device A10 will be described with reference to Fig. 18. The semiconductor module B10 includes the semiconductor device A10, a heat dissipation member 70, and an insulating material 80. The cross-sectional position in Fig. 18 corresponds to the cross-sectional position in Fig. 7.

[0071] The heat dissipation member 70 serves to cool the semiconductor device A10. The heat dissipation member 70 is made of a material containing, for example, aluminum (Al). As shown in FIG. 18 , the heat dissipation member 70 has a main surface 71. The main surface 71 faces the sealing resin 50. The main surface 71 is in contact with the fourth surface 611 of the first portion 61 of each of the plurality of protrusions 60.

[0072] 18 , the heat dissipation member 70 is provided with a plurality of engagement portions 72 recessed from the main surface 71. The second portions 62 of the plurality of protrusions 60 are individually fitted into the plurality of engagement portions 72. The third surface 621 and the peripheral surface 622 of the second portions 62 are in contact with the heat dissipation member 70.

[0073] As shown in FIG. 18 , the insulating material 80 is located between the main surface 71 of the heat dissipation member 70 and the second surfaces 102 of the two base materials 10. The insulating material 80 is made of an insulating material containing, for example, at least one of resin and ceramic. The insulating material preferably has a relatively high thermal conductivity. By including the insulating material 80 in the semiconductor module B10, the heat dissipation member 70 and each of the two base materials 10 are electrically insulated from each other. In a direction perpendicular to the first direction z, the insulating material 80 is adjacent to the first portion 61 of each of the multiple protrusions 60. The insulating material 80 is in contact with the main surface 71 and each of the second surfaces 102 of the two base materials 10.

[0074] Next, the effects of the semiconductor device A10 will be described.

[0075] The semiconductor device A10 includes a substrate 10, a semiconductor element 21, a sealing resin 50, and a protrusion 60. At least a portion of the substrate 10 is a conductor. The semiconductor element 21 is bonded to one side of the substrate 10 in the first direction z. The protrusion 60 protrudes from the sealing resin 50 in the first direction z. The protrusion 60 is located on the opposite side of the substrate 10 from the semiconductor element 21 in the first direction z. With this configuration, as shown in FIG. 18 , when attaching the semiconductor device A10 to a heat dissipation member 70, the attachment is completed by fitting the protrusion 60 into an engagement portion 72 provided on the heat dissipation member 70. Therefore, with this configuration, the semiconductor device A10 can be more easily attached to the heat dissipation member 70.

[0076] The second surface 102 of the base material 10 is exposed from the first surface 52 of the sealing resin 50. By adopting this configuration, the heat dissipation performance of the semiconductor device A10 can be further improved.

[0077] The protrusion 60 has a third surface 621 that faces the same side as the first surface 52 of the sealing resin 50 in the first direction z. In the first direction z, the third surface 621 is located farther from the first surface 52 than the second surface 102 of the base material 10. By adopting this configuration, even in a configuration in which the second surface 102 is exposed from the first surface 52, the protrusion 60 can be reliably fitted into the engaging portion 72 of the heat dissipation member 70.

[0078] The protrusions 60 are integral with the sealing resin 50. By adopting this configuration, the number of parts required for manufacturing the semiconductor device A10 can be reduced.

[0079] The protrusion 60 includes a first portion 61 protruding from the first surface 52 of the sealing resin 50 and a third surface 621, and also has a second portion 62 located on the opposite side of the sealing resin 50 from the first portion 61 in the first direction z. As viewed in the first direction z, the second portion 62 is located inward from a periphery 612 of the first portion 61. With this configuration, when the semiconductor device A10 is attached to the heat dissipation member 70 as shown in FIG. 18 , a space for disposing the insulating material 80 can be provided between the main surface 71 of the heat dissipation member 70 and the second surface 102 of the base 10. Furthermore, if the insulating material 80 attempts to shift in a direction perpendicular to the first direction z, the first portion 61 serves as a means for restricting the shift of the insulating material 80.

[0080] The first base material 10A is provided with a first seat portion 103 recessed from the mounting surface 101. A portion of the second conductive member 32 is housed in the first seat portion 103. With this configuration, when the second conductive member 32 is conductively joined to the second semiconductor element 21B and the first base material 10A, the first seat portion 103 restricts rotation of the second conductive member 32 about the first direction z. This makes it possible to suppress misalignment of the second conductive member 32 with respect to the second semiconductor element 21B.

[0081] The third power terminal 13 is provided with a second seat 133 that is recessed in the first direction z from the side where the first intermediate portion 313 of the first conductive member 31 is located in the first direction z. A portion of the second joint portion 312 of the first conductive member 31 is housed in the second seat 133. With this configuration, when the first conductive member 31 is conductively joined to the first semiconductor element 21A and the third power terminal 13, the second seat 133 restricts rotation of the first conductive member 31 about the first direction z. This makes it possible to suppress misalignment of the first conductive member 31 with respect to the first semiconductor element 21A.

[0082] The first power terminal 11 is connected to the first substrate 10A. The second power terminal 12 is connected to the second substrate 10B. This configuration makes it possible to prevent the semiconductor device A10 from increasing in size while utilizing the two substrates 10 as conductive paths for the semiconductor device A10.

[0083] The sealing resin 50 has a plurality of recesses 56 recessed in the third direction y from the first side surface 53. This configuration ensures a longer creepage distance of the sealing resin 50 between any two adjacent leads of the third power terminal 13, the first power terminal 11, and the second power terminal 12. This improves the dielectric strength of the semiconductor device A10.

[0084] The sealing resin 50 has a groove 57 recessed from the first surface 52 and separating the second surfaces 102 of the two base materials 10 as viewed in the first direction z. This configuration ensures a longer creepage distance of the sealing resin 50 between the two base materials 10. This allows for a further improvement in the dielectric strength of the semiconductor device A10. Furthermore, thermal strain in the sealing resin 50 in the second direction x is dispersed. This allows for the suppression of excessive thermal expansion of the sealing resin 50 in the second direction x.

[0085] Second Embodiment: A semiconductor device A20 according to a second embodiment of the present disclosure will be described with reference to Figures 19 to 21. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated descriptions will be omitted.

[0086] In the semiconductor device A20, the configuration of the plurality of protrusions 60 is different from that of the semiconductor device A10.

[0087] 19 , each of the multiple protrusions 60 has a base 63 and a first protrusion 64. The base 63 includes a third surface 621 and a circumferential surface 622. The first protrusion 64 protrudes in the second direction x from a region of the circumferential surface 622 located on one side of the base 63 in the second direction x. The base 63 and the first protrusion 64 are included in elements of the second portion 62 of each of the multiple protrusions 60.

[0088] 20 and 21 , as viewed in the first direction z, the dimension of the first protrusion 64 in the third direction y is equal to or less than the dimension of a first boundary 631 between the base 63 and the first protrusion 64. As viewed in the first direction z, the first protrusion 64 includes two first edges 641 that are spaced apart from each other in the third direction y. Each of the two first edges 641 is inclined with respect to the second direction x. The two first edges 641 are inclined in directions that move closer to each other as they move away from the first boundary 631 in the second direction x.

[0089] 19 , the multiple protrusions 60 include a first protrusion 60A, a second protrusion 60B, a third protrusion 60C, and a fourth protrusion 60D. The first protrusion 60A and the second protrusion 60B are spaced apart from each other in the third direction y. The third protrusion 60C and the fourth protrusion 60D are spaced apart from each other in the third direction y. The third protrusion 60C is located on the opposite side of the first protrusion 60A from the two substrates 10 in the second direction x. The fourth protrusion 60D is located on the opposite side of the second protrusion 60B from the two substrates 10 in the second direction x.

[0090] As shown in Figures 19 and 20, the first convex body 60A has a first base portion 63A corresponding to the base portion 63 and a first convex portion 64A corresponding to the first protrusion 64. The first convex portion 64A is located on the side facing the two substrates 10 with respect to the first base portion 63A in the second direction x. As shown in Figures 19 and 21, the second convex body 60B has a second base portion 63B corresponding to the base portion 63 and a second convex portion 64B corresponding to the first protrusion 64. The second convex portion 64B is located on the opposite side of the side facing the two substrates 10 with respect to the second base portion 63B in the second direction x. Therefore, the position of the first convex portion 64A with respect to the first base portion 63A in the second direction x is opposite to the position of the second convex portion 64B with respect to the second base portion 63B in the second direction x.

[0091] As shown in FIG. 19 , the third convex body 60C has a third base portion 63C corresponding to the base portion 63 and a third convex portion 64C corresponding to the first protrusion 64. The third convex portion 64C is located on the opposite side of the second direction x from the side facing the two substrates 10 with respect to the third base portion 63C. As shown in FIG. 19 , the fourth convex body 60D has a fourth base portion 63D corresponding to the base portion 63 and a fourth convex portion 64D corresponding to the first protrusion 64. The fourth convex portion 64D is located on the side facing the two substrates 10 with respect to the fourth base portion 63D with respect to the second direction x. Therefore, the position of the third convex portion 64C with respect to the third base portion 63C in the second direction x is opposite to the position of the fourth convex portion 64D with respect to the fourth base portion 63D in the second direction x.

[0092] 19 , in the semiconductor device A20, the position of the first convex portion 64A relative to the first base portion 63A in the second direction x is equal to the position of the third convex portion 64C relative to the third base portion 63C in the second direction x. The position of the second convex portion 64B relative to the second base portion 63B in the second direction x is equal to the position of the fourth convex portion 64D relative to the fourth base portion 63D in the second direction x.

[0093] Next, a semiconductor device A21 according to a first modified example of the second embodiment of the present disclosure will be described with reference to Fig. 22. Fig. 22 corresponds to Fig. 20 .

[0094] In the semiconductor device A21, the configuration of the plurality of protrusions 60 is different from that of the semiconductor device A20. As shown in Fig. 22 , when viewed in the first direction z, the two first edges 641 of the first protrusion 64 of each of the plurality of protrusions 60 are convex arcs.

[0095] Next, a semiconductor device A22 according to a second modified example of the second embodiment of the present disclosure will be described with reference to Fig. 23. Here, the cross-sectional position of Fig. 23 corresponds to the cross-sectional position of Fig. 14 showing the semiconductor device A10.

[0096] 23 , the peripheral surface 622 of the base 63 of each of the plurality of protrusions 60 is inclined with respect to the first direction z. The size of the cross section of the base 63 perpendicular to the first direction z decreases from the fourth surface 611 to the third surface 621 of the first portion 61 of any of the corresponding plurality of protrusions 60.

[0097] Next, a semiconductor device A23 according to a third modified example of the second embodiment of the present disclosure will be described with reference to FIG.

[0098] In the semiconductor device A23, the configuration of the multiple protrusions 60 differs from that of the semiconductor device A20. As shown in Fig. 24 , the first protrusion 64A is located on the side facing the two substrates 10 in the second direction x with the first base 63A as the reference. The third protrusion 64C is located on the side facing the two substrates 10 in the second direction x with the third base 63C as the reference. Therefore, the position of the first protrusion 64A in the second direction x with the first base 63A as the reference and the position of the third protrusion 64C in the second direction x with the third base 63C as the reference are mutually opposite.

[0099] 24 , the second convex portion 64B is located on the opposite side of the second direction x from the side facing the two substrates 10, with the second base portion 63B as the reference. The fourth convex portion 64D is located on the opposite side of the second direction x from the side facing the two substrates 10, with the fourth base portion 63D as the reference. Therefore, the position of the second convex portion 64B in the second direction x, with the second base portion 63B as the reference, and the position of the fourth convex portion 64D in the second direction x, with the fourth base portion 63D as the reference, are mutually opposite.

[0100] Next, the effects of the semiconductor device A20 will be described.

[0101] The semiconductor device A20 includes a substrate 10, a semiconductor element 21, a sealing resin 50, and a protrusion 60. At least a portion of the substrate 10 is a conductor. The semiconductor element 21 is bonded to one side of the substrate 10 in the first direction z. The protrusion 60 protrudes from the sealing resin 50 in the first direction z. The protrusion 60 is located on the opposite side of the substrate 10 from the semiconductor element 21 in the first direction z. Therefore, this configuration makes it possible to more easily attach the semiconductor device A20 to the heat dissipation member 70. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A20 achieves the same effects as the semiconductor device A10.

[0102] In the semiconductor device A20, the convex body 60 has a base 63 and a first protrusion 64. The first protrusion 64 protrudes in the second direction x from one side of the base 63 in the second direction x. As viewed in the first direction z, the dimension of the first protrusion 64 in the third direction y is equal to or less than the dimension of a first boundary 631 between the base 63 and the first protrusion 64. Here, in the semiconductor device A20, the dimension of the sealing resin 50 in the second direction x is greater than the dimension of the sealing resin 50 in the third direction y. Therefore, thermal expansion and contraction of the sealing resin 50 due to heat generated from the semiconductor element 21 are more significant in the second direction x than in the third direction y. Therefore, with this configuration, when the semiconductor device A20 is attached to the heat dissipation member 70 (see FIG. 18 ), the stress in the second direction x acting on the interface between the first protrusion 64 and the region of the heat dissipation member 70 that defines the engagement portion 72 increases due to either thermal expansion or thermal contraction of the sealing resin 50. This effectively prevents the protrusions 60 from slipping out of the heat dissipation member 70 .

[0103] The protrusions 60 include first and second protrusions 60A and 60B spaced apart in the third direction y. The first protrusions 60A have a first base 63A and a first protrusion 64A. The second protrusions 60B have a second base 63B and a second protrusion 64B. The position of the first protrusion 64A relative to the first base 63A in the second direction x is opposite to the position of the second protrusion 64B relative to the second base 63B in the second direction x. With this configuration, when the semiconductor device A20 is attached to the heat dissipation member 70, the stress acting in the second direction x on the interface between either the first protrusion 64A or the second protrusion 64B and the region of the heat dissipation member 70 that defines the engagement portion 72 increases due to both thermal expansion and thermal contraction of the sealing resin 50. This more effectively prevents the protrusions 60 from slipping out of the heat dissipation member 70.

[0104] 25 and 26, a semiconductor device A30 according to a third embodiment of the present disclosure will be described. In these figures, elements that are the same as or similar to those of the semiconductor device A10 and the semiconductor device A20 described above are designated by the same reference numerals, and redundant description will be omitted.

[0105] In the semiconductor device A30, the configuration of the plurality of protrusions 60 is different from that of the semiconductor device A20.

[0106] 25 , each of the multiple protrusions 60 has a base 63, a first protrusion 64, and a second protrusion 65. The second protrusion 65 protrudes in the second direction x from a peripheral surface 622 of the base 63. The second protrusion 65 is located on the opposite side of the base 63 from the first protrusion 64 in the second direction x. The second protrusion 65 is included in an element of the second portion 62 of each of the multiple protrusions 60.

[0107] 26 , as viewed in the first direction z, the dimension of the second protrusion 65 in the third direction y is equal to or less than the dimension of a second boundary 632 between the base 63 and the second protrusion 65. As viewed in the first direction z, the second protrusion 65 includes two second edges 651 that are spaced apart from each other in the third direction y. Each of the two second edges 651 is inclined with respect to the second direction x. The two second edges 651 are inclined in directions that move closer to each other as they move away from the second boundary 632 in the second direction x.

[0108] Next, the effects of the semiconductor device A30 will be described.

[0109] The semiconductor device A30 includes a substrate 10, a semiconductor element 21, a sealing resin 50, and a protrusion 60. At least a portion of the substrate 10 is a conductor. The semiconductor element 21 is bonded to one side of the substrate 10 in the first direction z. The protrusion 60 protrudes from the sealing resin 50 in the first direction z. The protrusion 60 is located on the opposite side of the substrate 10 from the semiconductor element 21 in the first direction z. Therefore, this configuration makes it possible to more easily attach the semiconductor device A30 to the heat dissipation member 70. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A30 achieves the same effects as the semiconductor device A10.

[0110] In the semiconductor device A30, the convex body 60 has a base 63, a first protrusion 64, and a second protrusion 65. The second protrusion 65 protrudes from the base 63 in the second direction x. The second protrusion 65 is located on the opposite side of the base 63 from the first protrusion 64 in the second direction x. As viewed in the first direction z, the dimension of the second protrusion 65 in the third direction y is equal to or less than the dimension of a second boundary 632 between the base 63 and the second protrusion 65. With this configuration, when the semiconductor device A30 is attached to the heat dissipation member 70 (see FIG. 18 ), both thermal expansion and thermal contraction of the sealing resin 50 increase the stress in the second direction x acting on the interface between either the first protrusion 64 or the second protrusion 65 and the region of the heat dissipation member 70 that defines the engagement portion 72. This more effectively prevents the convex body 60 from slipping out of the heat dissipation member 70.

[0111] 27 and 28, a semiconductor device A40 according to a fourth embodiment of the present disclosure will be described. In these figures, elements that are the same as or similar to those in the semiconductor device A10 and semiconductor module B10 described above are designated by the same reference numerals, and redundant description will be omitted. The cross-sectional position in FIG. 28 corresponds to the cross-sectional position in FIG. 7, which shows the semiconductor device A10.

[0112] In the semiconductor device A40, the configuration of the plurality of protrusions 60 is different from that of the semiconductor device A10.

[0113] As shown in FIGS. 27 and 28, the second portion 62 of each of the plurality of protrusions 60 is provided with a recess 66 recessed from the third surface 621 .

[0114] 29 and 30, a semiconductor module B20 including the semiconductor device A40 will be described. The semiconductor module B20 includes the semiconductor device A10, a heat dissipation member 70, and an insulating material 80. The cross-sectional position in FIG. 29 corresponds to the cross-sectional position in FIG. 28.

[0115] 30 , the heat dissipation member 70 has a bottom surface 721 that defines one of a plurality of engaging portions 72 and faces the same side as the main surface 71 in the first direction z. The heat dissipation member 70 is provided with a protrusion 73 that protrudes from the bottom surface 721. The protrusion 73 is housed in one of the plurality of engaging portions 72. The protrusion 73 is fitted into one of the recesses 66 of a plurality of protrusions 60 that are fitted into one of the plurality of engaging portions 72.

[0116] Next, the effects of the semiconductor device A40 will be described.

[0117] The semiconductor device A40 includes a substrate 10, a semiconductor element 21, a sealing resin 50, and a protrusion 60. At least a portion of the substrate 10 is a conductor. The semiconductor element 21 is bonded to one side of the substrate 10 in the first direction z. The protrusion 60 protrudes from the sealing resin 50 in the first direction z. The protrusion 60 is located on the opposite side of the substrate 10 from the semiconductor element 21 in the first direction z. Therefore, this configuration makes it possible to more easily attach the semiconductor device A40 to the heat dissipation member 70. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A40 achieves the same effects as the semiconductor device A10.

[0118] In the semiconductor device A40, the protrusion 60 is provided with a recess 66 recessed from the third surface 621. With this configuration, when the semiconductor device A40 is attached to the heat dissipation member 70 (see FIG. 29 ), the protrusion 73 provided on the heat dissipation member 70 shown in FIG. 30 is fitted into the recess 66. This effectively prevents the protrusion 60 from slipping out of the heat dissipation member 70.

[0119] Fifth Embodiment: A semiconductor device A50 according to a fifth embodiment of the present disclosure will be described with reference to Figures 31 to 33. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated explanations will be omitted. For ease of understanding, Figure 31 shows the sealing resin 50 through which light is transmitted. In Figure 31, the transmitted sealing resin 50 is shown by imaginary lines.

[0120] In the semiconductor device A50, the configuration of the base material 10 is different from that of the semiconductor device A10.

[0121] As shown in FIGS. 31 to 33 , the substrate 10 includes an insulating layer 104, two conductive layers 105, and a heat dissipation layer 106. The two conductive layers 105 correspond to the first substrate 10A and the second substrate 10B, respectively. The insulating layer 104 is located between the two conductive layers 105 and the heat dissipation layer 106 in the first direction z. The insulating layer 104 and the two conductive layers 105 are each covered with a sealing resin 50. The insulating layer 104 is made of a material with relatively high thermal conductivity. The insulating layer 104 is made of ceramics containing, for example, silicon nitride (Si3N4) or aluminum nitride (AlN). Alternatively, the insulating layer 104 may be made of a material containing resin. The two conductive layers 105 contain copper.

[0122] 32 and 33 , the heat dissipation layer 106 includes the second surface 102. The heat dissipation layer 106 includes copper. As viewed in the first direction z, the heat dissipation layer 106 is located inward from the periphery 104A of the insulating layer 104. As viewed in the first direction z, each of the multiple protrusions 60 overlaps the insulating layer 104. In the semiconductor device A50, the sealing resin 50 does not have a groove portion 57.

[0123] Next, the effects of the semiconductor device A50 will be described.

[0124] The semiconductor device A50 includes a substrate 10, a semiconductor element 21, a sealing resin 50, and a protrusion 60. At least a portion of the substrate 10 is a conductor. The semiconductor element 21 is bonded to one side of the substrate 10 in the first direction z. The protrusion 60 protrudes from the sealing resin 50 in the first direction z. The protrusion 60 is located on the opposite side of the substrate 10 from the semiconductor element 21 in the first direction z. Therefore, this configuration makes it possible to more easily attach the semiconductor device A50 to the heat dissipation member 70. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A50 achieves the same effects as the semiconductor device A10.

[0125] The present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the present disclosure can be freely modified in various ways.

[0126] The present disclosure includes embodiments described in the following appendices. Appendix 1. A semiconductor device comprising: a substrate at least a portion of which is a conductor; a semiconductor element bonded to one side of the substrate in a first direction; a sealing resin covering at least a portion of the substrate and the semiconductor element; and a convex body protruding from the sealing resin in the first direction, wherein the convex body is located on the opposite side of the substrate from the semiconductor element in the first direction. Appendix 2. The semiconductor device according to Appendix 1, wherein the sealing resin has a first surface facing the first direction, the convex body protruding from the first surface, and the substrate is exposed from the first surface. Appendix 3. The semiconductor device according to Appendix 2, wherein the substrate has a second surface exposed from the first surface, the convex body has a third surface facing the same side as the first surface in the first direction, and the third surface is located farther from the first surface than the second surface in the first direction. Appendix 4. The semiconductor device according to Appendix 3, wherein the convex body is integral with the sealing resin. Appendix 5. Supplementary Note 4: The semiconductor device according to Supplementary Note 4, wherein the protrusion has a first portion protruding from the first surface and a second portion including the third surface and located on the opposite side of the sealing resin from the first portion in the first direction, and the second portion is located inward from a periphery of the first portion as viewed in the first direction. Supplementary Note 6: The semiconductor device according to Supplementary Note 5, wherein the first portion includes a fourth surface facing the same side as the first surface in the first direction, and the second surface is located closer to the first surface than the fourth surface in the first direction. Supplementary Note 7: The semiconductor device according to Supplementary Note 6, wherein a dimension of the second portion in the first direction is larger than a dimension of the first portion in the first direction. Supplementary Note 8: The semiconductor device described in Appendix 4, wherein the convex body has a base including the third surface and a first protrusion protruding in a second direction from one side of the base in the second direction perpendicular to the first direction, and when viewed in the first direction, the dimension of the first protrusion in a third direction perpendicular to each of the first direction and the second direction is less than or equal to the dimension of a first boundary between the base and the first protrusion.Appendix 9. The semiconductor device according to Appendix 8, wherein, when viewed in the first direction, the first protrusion includes two edges spaced apart in the third direction, and each of the two edges is inclined with respect to the second direction. Appendix 10. The semiconductor device according to Appendix 9, wherein the two edges are inclined in the second direction so that they approach each other the further away from the first boundary. Appendix 11. The semiconductor device according to Appendix 10, wherein the convex bodies include a first convex body and a second convex body spaced apart in the third direction, the first convex body has a first base portion corresponding to the base and a first convex portion corresponding to the first protrusion, the second convex body has a second base portion corresponding to the base and a second convex portion corresponding to the first protrusion, and a position of the first convex portion relative to the first base portion in the second direction and a position of the second convex portion relative to the second base portion in the second direction are opposite to each other. Appendix 12. The semiconductor device according to Appendix 10, wherein the convex body has a second protrusion protruding from the base in the second direction, the second protrusion being located on the opposite side of the base in the second direction from the first protrusion, and a dimension of the second protrusion in the third direction as viewed in the first direction is equal to or less than a dimension of a second boundary between the base and the second protrusion. Appendix 13. The semiconductor device according to Appendix 4, wherein the convex body has a circumferential surface surrounding the third surface as viewed in the first direction, and the circumferential surface is inclined with respect to the first direction. Appendix 14. The semiconductor device according to Appendix 13, wherein a size of a cross section of the convex body orthogonal to the first direction decreases from the first surface to the third surface. Appendix 15. The semiconductor device according to any of Appendixes 1 to 14, wherein the entire substrate is made of metal, and the semiconductor element is conductively bonded to the substrate. Appendix 16. The semiconductor device according to claim 15, further comprising a power terminal connected to the base, the sealing resin having a first side surface facing a direction perpendicular to the first direction, and the power terminal protruding from the first side surface. 17. The semiconductor device according to claim 16, further comprising a signal terminal electrically connected to the semiconductor element, the signal terminal protruding from the first side surface.Appendix 18. A semiconductor module comprising: a heat dissipation member; and the semiconductor device according to Appendix 6 or 7, wherein the heat dissipation member has a main surface facing the sealing resin, the heat dissipation member is provided with an engaging portion recessed from the main surface, and the protrusion is fitted into the engaging portion. Appendix 19. The semiconductor module according to Appendix 18, further comprising: an insulating material located between the main surface and the second surface, the insulating material being adjacent to the first portion in a direction perpendicular to the first direction. Appendix 20. A vehicle comprising: a drive system; a storage battery that supplies power to the drive system; an on-board charger that supplies power to the storage battery; and the semiconductor device according to Appendix 17, wherein the semiconductor device is included in a circuit constituting the on-board charger. Appendix 21. The semiconductor device according to Appendix 4, wherein the composition of the protrusion is the same as the composition of the sealing resin. Appendix 22. The semiconductor device according to any of Appendixes 8 to 12, wherein a dimension of the sealing resin in the second direction is greater than a dimension of the sealing resin in the third direction. Appendix 23. The semiconductor device according to Appendix 22, wherein the substrate includes a first substrate and a second substrate spaced apart from each other in the second direction. Appendix 24. The semiconductor device according to Appendix 23, wherein the semiconductor element includes a first semiconductor element conductively bonded to the first substrate and a second semiconductor element conductively bonded to the second substrate. Appendix 25. The semiconductor device according to Appendix 24, further comprising a first power terminal, a second power terminal, and a third power terminal, wherein the first power terminal is connected to the first substrate, the second power terminal is connected to the second substrate, and the third power terminal is electrically connected to the first semiconductor element. Appendix 26. The semiconductor device according to Appendix 24, wherein the substrate has two conductive layers corresponding to the first substrate and the second substrate, respectively, an insulating layer located on the opposite side of the two conductive layers from the first semiconductor element and the second semiconductor element, and a heat dissipation layer located on the opposite side of the insulating layer from the two conductive layers, and the heat dissipation layer includes the second surface. Appendix 27. 27. The semiconductor device according to claim 26, wherein the heat dissipation layer is located inward from a periphery of the insulating layer when viewed in the first direction.Appendix 28. The semiconductor device according to Appendix 27, wherein the convex body overlaps the insulating layer when viewed in the first direction. Appendix 29. The semiconductor device according to any one of Appendixes 5 to 7, wherein the convex body has a base including the third surface and a first protrusion protruding in the second direction from one side of the base in a second direction orthogonal to the first direction, the base and the first protrusion being included in elements of the second part, and a dimension of the first protrusion in a third direction orthogonal to each of the first and second directions when viewed in the first direction is equal to or less than a dimension of a first boundary between the base and the first protrusion. Appendix 30. The semiconductor device according to Appendix 4, wherein the third surface is convex toward the side toward which the first surface faces in the first direction. Appendix 31. The semiconductor device according to Appendix 6 or 7, wherein the convex body has a recess recessed from the third surface. Appendix 32. The semiconductor module according to Appendix 19, wherein the fourth surface is in contact with the main surface. Appendix 33. The semiconductor module according to claim 32, wherein the insulating material is in contact with each of the main surface and the second surface. Addition 34. A semiconductor module comprising: a heat dissipation member and the semiconductor device according to claim 31, wherein the heat dissipation member has a main surface facing the sealing resin, and the heat dissipation member is provided with an engaging portion recessed from the main surface and a protruding portion protruding from a bottom surface defining the engaging portion, the protruding portion being fitted into the engaging portion, and the protruding portion being fitted into the recess.

[0127] A10, A20, A30, A40, A50: semiconductor device B10, B20: semiconductor module C: vehicle 10: substrate 10A: first substrate 10B: second substrate 101: main surface 102: back surface 103: first seat 104: insulating layer 104A: periphery 105: conductive layer 106: heat dissipation layer 11: first power terminal 111: mounting portion 112: covering portion 12: second power terminal 121: mounting portion 122: covering portion 13: third power terminal 131: mounting portion 132: covering portion 133: second seat 14: first signal terminal 14A: first gate terminal 14B: second gate terminal 141: mounting portion 142: covering portion 15: second signal terminal 15A: first detection terminal 15B: Second detection terminal 151: Mounting portion 152: Covering portion 21: Semiconductor element 21A: First semiconductor element 21B: Second semiconductor element 211: First electrode 212: Second electrode 213: Gate electrode 214: Detection electrode 29: First bonding layer 31: First conductive member 311: First bonding portion 312: Second bonding portion 313: First intermediate portion 32: Second conductive member 321: Third bonding portion 322: Fourth bonding portion 323: Second intermediate portion 33: Second bonding layer 34: Third bonding layer 35: Fourth bonding layer 36: Fifth bonding layer 41: First wire 42: Second wire 43: First relay wire 44: Second relay wire 50: Sealing resin 51: Top surface 52: First surface 53: First side surface 54: Second side surface 55: Third side surface 56: Depression portion 57: Groove portion 60: Convex body 60A to 60D: First to fourth convex bodies 61: First portion 611: Fourth surface 612: Periphery 62: Second portion 621: Third surface 622: Peripheral surface 63: Base portion 63A to 63D: First to fourth base portions 631: First boundary 632: Second boundary 64: First protrusion 64A to 64D: First to fourth convex portions 641: First edge 65: Second protrusion 651: Second edge 66: Recess 70: Heat dissipation member 71: Main surface 72: Engagement portion 721: Bottom surface 73: Convex portion 80: Insulating material 91: On-board charger 92: Storage battery 93: Drive system 931: Inverter 932: Drive source z: First direction x: Second direction y: Third direction

Claims

1. A semiconductor device comprising: a substrate at least a portion of which is a conductor; a semiconductor element bonded to one side in a first direction of the substrate; an encapsulating resin covering at least a portion of the substrate and the semiconductor element; and a protrusion protruding from the encapsulating resin in the first direction, the protrusion being positioned on the opposite side of the substrate to the semiconductor element in the first direction.

2. The semiconductor device according to claim 1, wherein the sealing resin has a first surface facing the first direction, the protrusion protrudes from the first surface, and the base material is exposed from the first surface.

3. The semiconductor device described in claim 2, wherein the base has a second surface exposed from the first surface, the protrusion has a third surface facing the same side as the first surface in the first direction, and the third surface is located farther from the first surface in the first direction than the second surface.

4. The semiconductor device according to claim 3, wherein said protrusion is integral with said sealing resin.

5. The semiconductor device described in claim 4, wherein the convex body has a first portion protruding from the first surface and a second portion including the third surface and positioned on the opposite side of the sealing resin from the first portion in the first direction, and when viewed in the first direction, the second portion is positioned inward from the periphery of the first portion.

6. The semiconductor device described in claim 5, wherein the first portion includes a fourth surface facing the same side as the first surface in the first direction, and the second surface is located closer to the first surface in the first direction than the fourth surface.

7. The semiconductor device according to claim 6, wherein the dimension of said second portion in said first direction is larger than the dimension of said first portion in said first direction.

8. The semiconductor device described in claim 4, wherein the convex body has a base including the third surface, and a first protrusion protruding in a second direction from one side of the base in the second direction perpendicular to the first direction, and when viewed in the first direction, a dimension of the first protrusion in a third direction perpendicular to both the first direction and the second direction is less than or equal to a dimension of a first boundary between the base and the first protrusion.

9. The semiconductor device according to claim 8, wherein, when viewed in the first direction, the first protrusion includes two edges spaced apart from each other in the third direction, and each of the two edges is inclined with respect to the second direction.

10. The semiconductor device according to claim 9, wherein each of said two edges is inclined in a direction such that the edges approach each other as they move away from said first boundary in said second direction.

11. The semiconductor device described in claim 10, wherein the convex bodies include a first convex body and a second convex body spaced apart from each other in the third direction, the first convex body has a first base portion corresponding to the base and a first convex portion corresponding to the first protrusion, the second convex body has a second base portion corresponding to the base and a second convex portion corresponding to the first protrusion, and a position of the first convex body with respect to the first base in the second direction and a position of the second convex body with respect to the second base in the second direction are opposite to each other.

12. The semiconductor device described in claim 10, wherein the convex body has a second protrusion protruding from the base in the second direction, the second protrusion is located on the opposite side of the base in the second direction to the first protrusion, and when viewed in the first direction, the dimension of the second protrusion in the third direction is less than or equal to the dimension of a second boundary between the base and the second protrusion.

13. The semiconductor device according to claim 4, wherein the protrusion has a peripheral surface surrounding the third surface when viewed in the first direction, and the peripheral surface is inclined with respect to the first direction.

14. The semiconductor device according to claim 13, wherein a size of a cross section of said protrusion perpendicular to said first direction decreases from said first surface to said third surface.

15. The semiconductor device according to any one of claims 1 to 14, wherein the entire substrate is made of metal, and the semiconductor element is conductively bonded to the substrate.

16. The semiconductor device according to claim 15, further comprising a power terminal connected to the base material, the sealing resin having a first side surface facing in a direction perpendicular to the first direction, and the power terminal protruding from the first side surface.

17. The semiconductor device according to claim 16, further comprising a signal terminal electrically connected to said semiconductor element, said signal terminal protruding from said first side surface.

18. A semiconductor module comprising: a heat dissipation member; and the semiconductor device according to claim 6 or 7, wherein the heat dissipation member has a main surface facing the sealing resin, the heat dissipation member is provided with an engagement portion recessed from the main surface, and the protrusion is fitted into the engagement portion.

19. The semiconductor module according to claim 18, further comprising an insulating material located between the main surface and the second surface, the insulating material being adjacent to the first portion in a direction perpendicular to the first direction.

20. A vehicle comprising: a drive system; a storage battery that supplies power to the drive system; an on-board charger that supplies power to the storage battery; and the semiconductor device according to claim 17, wherein the semiconductor device is included in a circuit that constitutes the on-board charger.

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