Method for manufacturing organic light-emitting display device

Abstract

This method for manufacturing an organic light-emitting display device can: form an anode in each of a plurality of sub-pixels, form a plurality of banks between the plurality of sub-pixels, and form a plurality of protrusion portions on the plurality of banks; form a first connection structure on a first side portion of a first protrusion portion adjacent to a red sub-pixel, and form a first organic light-emitting element in the red sub-pixel by using a first photolithography process; form a second connection structure on a second side portion of the first protrusion portion and a first side portion of a second protrusion portion adjacent to a green sub-pixel, and form a second organic light-emitting element in the green sub-pixel by using a second photolithography process; form a third connection structure on a second side portion of the second protrusion portion adjacent to a blue sub-pixel, and form a third organic light-emitting element in the blue sub-pixel by using a third photolithography process.

Description

Method for manufacturing an organic light-emitting display device

[0001] The embodiment relates to a method for manufacturing an organic light-emitting display device.

[0002] As demand for portable information media increases, attempts to apply organic light-emitting diodes (OLEDs) to various lightweight and thin information electronic devices are expanding. Recently, OLEDs are being applied to product groups such as mobile PCs and automobiles rather than TVs or mobile phones. Since OLEDs applied to mobile PCs and automobiles operate with still images for long periods of time, long lifespan is required. To achieve long lifespan, light extraction from OLEDs must be maximized. Furthermore, to reduce costs, it is necessary to expand the technology to produce OLEDs on substrates (110) of not only 8.5th generation (2200x2500mm) but also 10.5th generation (3370x2940mm). To produce OLEDs with long lifespan, each subpixel with a top emission structure and side-by-side structure must be implemented with a structure of two or more OLEDs.

[0003] The structure of these organic light-emitting devices can be obtained through deposition equipment using a fine metal mask (FMM, hereinafter referred to as FMM). However, the deposition method using FMM has the problem of low productivity because the production logistics must be produced only in a cluster manner rather than an inline manner. In addition, there is a problem of low alignment position accuracy (PPA) of the subpixel unit between the FMM and the substrate. Accordingly, the emission area ratio (EAR) is small, which limits the product life. Here, the emission area ratio is a value obtained by dividing the emission area of ​​a subpixel by the area of ​​the subpixel.

[0004] Therefore, it is very urgent to develop an organic light-emitting display device having a new deposition method and a new organic light-emitting element structure using the new deposition method to solve the aforementioned problems.

[0005] The present invention aims to solve the above-mentioned and other problems.

[0006] Another object of the embodiment is to provide an organic light emitting display device having a novel structure.

[0007] Another object of the present invention is to provide an organic light emitting display device capable of improving lifespan.

[0008] Another object of the present invention is to provide an organic light-emitting display device capable of improving productivity and yield.

[0009] Another object of the present invention is to provide an organic light-emitting display device capable of improving image quality.

[0010] The technical problems of the embodiment are not limited to those described in this article, but include those that can be understood through the description of the invention.

[0011] According to one aspect of the embodiment to achieve the above or other objects, a method for manufacturing an organic light-emitting display device comprises the steps of: forming an anode electrode on each of a red subpixel, a green subpixel, and a blue subpixel on a substrate; forming a first bank between the red subpixel and the green subpixel and a second bank between the green subpixel and the blue subpixel; forming a first protrusion and a second protrusion on the first bank and the second bank, respectively; forming a first connection structure on a first side of the first protrusion adjacent to the red subpixel, and forming a first organic light-emitting element on the red subpixel using a first photolithography process; forming a second connection structure on a second side of the first protrusion adjacent to the green subpixel and a first side of the second protrusion, and forming a second organic light-emitting element on the green subpixel using a second photolithography process; And forming a third connection structure on the second side of the second protrusion adjacent to the blue subpixel, and forming a third organic light-emitting element in the blue subpixel using a third photolithography process; wherein the first organic light-emitting element to the third organic light-emitting element each include the anode electrode, an organic light-emitting layer including a hole injection layer, and a cathode electrode, and the first connection structure to the third connection structure each include an auxiliary electrode electrically connected to the cathode electrode in contact with an end of the hole injection layer, and the step of forming the first bank and the second bank includes the step of forming a blocking structure for disconnecting the hole injection layer in the first bank and the second bank, respectively.

[0012] The step of forming the above blocking structure may include a step of forming a blocking layer that extends inward from the first side and the second side of the first bank and the first side and the second side of the second bank, respectively.

[0013] The step of forming the first organic light-emitting element may include a step of depositing and patterning a first organic light-emitting layer including a first hole injection layer and a first cathode electrode on the substrate, thereby forming the first organic light-emitting layer and the first cathode electrode on the red subpixel and the first bank. The first cathode electrode may be in contact with an end of the first hole injection layer and an auxiliary electrode of the first connection structure.

[0014] The first organic light-emitting layer may be disconnected corresponding to a first blocking structure formed on the first side of the first bank.

[0015] The step of forming the second organic light-emitting element may include a step of depositing and patterning a second organic light-emitting layer including a second hole injection layer and a second cathode electrode on the substrate, thereby forming the second organic light-emitting layer and the second cathode electrode on the green subpixel, the first bank, and the second bank. The second cathode electrode may be in contact with an end of the second hole injection layer and an auxiliary electrode of the second connection structure.

[0016] The second organic light-emitting layer may be disconnected corresponding to a second blocking structure formed on the second side of the first bank and the first side of the second bank.

[0017] The step of forming the third organic light-emitting element may include a step of depositing and patterning a third organic light-emitting layer including a third hole injection layer and a third cathode electrode on the substrate, thereby forming the third organic light-emitting layer and the third cathode electrode on the blue subpixel and the second bank. The third cathode electrode may be in contact with an end of the third hole injection layer and an auxiliary electrode of the third connection structure.

[0018] The third organic light-emitting layer may be disconnected corresponding to the third blocking structure formed on the second side of the second bank.

[0019] The step of forming the cathode electrode includes the step of forming a first conductive layer to electrically connect to the auxiliary electrode, and the first conductive layer may include a Mg:Ag alloy.

[0020] The step of forming the cathode electrode may include a step of forming a first conductive layer, and a step of forming a second conductive layer on the first conductive layer to electrically connect to the auxiliary electrode, wherein the first conductive layer may include a Mg:Ag alloy, and the second conductive layer may include a transparent conductive oxide material.

[0021] The method for manufacturing the organic light-emitting display device may further include a step of forming a first color filter layer to a third color filter layer on the first organic light-emitting element to the third organic light-emitting element.

[0022] The method for manufacturing the organic light-emitting display device may further include a step of forming an encapsulating layer on the first organic light-emitting element, the second organic light-emitting element, and the third organic light-emitting element.

[0023] The effects of the organic light-emitting display device according to the embodiment are described as follows.

[0024] According to at least one of the embodiments, there is an advantage that the process can be simplified and the process cost can be reduced because there is no need to use FMM.

[0025] According to at least one of the embodiments, there is an advantage that the EAR within a subpixel can be increased without the need for using an FMM, thereby improving the lifetime.

[0026] According to at least one of the embodiments, the organic light-emitting device is deposited on a large-area substrate in an inline deposition system, thereby providing advantages in productivity, yield, and material utilization efficiency.

[0027] Further scope of applicability of the embodiments will become apparent from the detailed description below. However, since various changes and modifications within the spirit and scope of the embodiments will be readily apparent to those skilled in the art, it should be understood that the detailed description and specific embodiments, such as preferred embodiments, are given by way of example only.

[0028] FIG. 1 is a plan view schematically illustrating an organic light-emitting display device according to a first embodiment.

[0029] Figure 2 is a plan view illustrating one pixel of Figure 1.

[0030] Fig. 3 is a circuit diagram illustrating an organic light-emitting display device according to an embodiment.

[0031] Figure 4a is a cross-sectional view taken along line AA' in the pixel of Figure 2.

[0032] Figure 4b is a cross-sectional view taken along line BB' in the pixel of Figure 2.

[0033] FIGS. 5A to 5O illustrate a manufacturing process of an organic light-emitting display device according to the first embodiment.

[0034] Fig. 6 is an enlarged cross-sectional view of the asymmetric blocking connection structure in Fig. 5o.

[0035] Fig. 7 is a cross-sectional view illustrating the blocking structure in Fig. 6.

[0036] Figures 8a to 8e illustrate a process for forming a blocking structure according to an embodiment.

[0037] FIGS. 9A to 9P illustrate a two-mask process for forming an asymmetric blocking connection structure according to an embodiment.

[0038] FIGS. 10A to 10H illustrate a one-mask process for forming an asymmetric blocking connection structure according to an embodiment.

[0039] Figures 11a to 11c illustrate another variation of the process of Figures 10e to 10g.

[0040] Figures 12a to 12d illustrate how a residual film is generated during the formation process of a red subpixel.

[0041] Figure 13a illustrates a residual film generated during the formation process of a red subpixel.

[0042] Figure 13b shows an example in which no residual film is formed.

[0043] Figures 14a to 14d illustrate a process for forming a red subpixel so that no residual film is formed on the second side of the first protrusion adjacent to the green subpixel.

[0044] Figures 15a to 15k illustrate detailed processes for forming red subpixels using the first JIT process technology.

[0045] Figures 16a to 16j illustrate detailed processes for forming green subpixels using the first JIT process technology.

[0046] FIGS. 17A to 17K illustrate detailed processes for forming blue subpixels using the first JIT process technology.

[0047] Figure 18 illustrates the substrate structure immediately before performing the second JIT process technology.

[0048] Figure 19 illustrates a first process of forming a connection structure using a second JIT process technology before forming a green organic light-emitting element.

[0049] Figure 20 illustrates a second process of forming a connection structure using a second JIT process technology before forming a green organic light-emitting element.

[0050] FIGS. 21a to 21k illustrate detailed processes for forming red subpixels using the second JIT process technology.

[0051] Figures 22a to 22m illustrate detailed processes for forming green subpixels and blue subpixels using the second JIT process technology.

[0052] Figure 23 illustrates the substrate structure immediately before performing the third JIT process technology.

[0053] Figure 24 illustrates a process for forming a connection structure before forming a green organic light-emitting element using a third JIT process technology.

[0054] Figure 25 illustrates an organic light-emitting display device manufactured using the third JIT process technology.

[0055] The sizes, shapes, and dimensions of components depicted in the drawings may differ from the actual components. Furthermore, even if the same components are depicted with different sizes, shapes, and dimensions across drawings, this is merely an example within the drawings, and the same components may have the same sizes, shapes, and dimensions across drawings.

[0056] Hereinafter, embodiments disclosed in the present specification will be described in detail with reference to the attached drawings. Regardless of the drawing numbers, identical or similar components will be given the same reference numbers and redundant descriptions thereof will be omitted. The suffixes 'module' and 'part' used for components in the following description are given or used interchangeably in consideration of the ease of writing the specification, and do not have distinct meanings or roles in themselves. In addition, the attached drawings are intended to make it easier to understand the embodiments disclosed in the present specification, and the technical ideas disclosed in the present specification are not limited by the attached drawings. In addition, when an element such as a layer, region, or substrate (110) is mentioned as existing 'on' another element, this includes that it may be directly on the other element or that other intermediate elements may exist therebetween.

[0057] Hereinafter, an organic light-emitting display device having a side-by-side structure manufactured using a photolithography process is disclosed. This structure is referred to as a side-by-side structure by photolithography (Ph-SbS). By using a photolithography process, the use of an FMM is eliminated, simplifying the process and reducing process costs. In addition, the EAR within a subpixel is increased, thereby improving the lifespan. Furthermore, since an organic light-emitting element is deposited on a large-area substrate in an inline deposition system, productivity, yield, and material utilization efficiency can be improved.

[0058] Hereinafter, the red subpixel (SPr) may be referred to as a first subpixel, the green subpixel (SPg) may be referred to as a second subpixel, and the blue subpixel (SPb) may be referred to as a third subpixel. In addition, the red organic light-emitting element (120r) may be referred to as a first organic light-emitting element, the green organic light-emitting element (120g) may be referred to as a second organic light-emitting element, and the blue organic light-emitting element (120b) may be referred to as a third organic light-emitting element.

[0059] Hereinafter, the organic light-emitting display device (100) is a top-emitting type that displays an image by emitting light in the upper direction of the substrate (110), but a bottom-emitting type that displays an image by emitting light in the lower direction of the substrate (110) may also be included in the technical concept of the present invention.

[0060] Hereinafter, the drawing symbols of the auxiliary electrodes may be given as AC as shown in Fig. 3 unless a separate drawing symbol is given.

[0061] Fig. 1 is a schematic plan view of an organic light-emitting display device according to a first embodiment. Fig. 2 is a plan view illustrating one pixel of Fig. 1.

[0062] Referring to FIGS. 1 and 2, an organic light-emitting display device (100) according to the first embodiment may include a plurality of pixels (P) arranged in a matrix. The plurality of pixels (P) may be positioned in a display area (AA). An area other than the display area (AA) may be a non-display area (NAA).

[0063] Each pixel (P) may include, for example, a red subpixel (SPr), a green subpixel (SPg), and a blue subpixel (SPb). For example, a red organic light-emitting element (120r) may be disposed in a red subpixel (SPr), a green organic light-emitting element (120g) may be disposed in a green subpixel (SPg), and a blue organic light-emitting element (120b) may be disposed in a blue subpixel (SPb). Although the drawing illustrates that one pixel (P) includes three subpixels (SPr, SPg, SPb), it may include more subpixels.

[0064] The drawing shows the area of ​​the blue subpixel (SPb) to be larger than the area of ​​the red subpixel (SPr) or the area of ​​the green subpixel (SPg), but other variations are possible.

[0065] Each subpixel (SPr, SPg, SPb) may include an emitting area (EA) and a non-emitting area (NEA). The emitting area (EA) may be an area where the organic light-emitting elements (120r, 120g, 120b) of each subpixel (SPr, SPg, SPb) are arranged, and the non-emitting area (NEA) may be an area remaining in each subpixel (SPr, SPg, SPb) excluding the emitting area (EA).

[0066] Meanwhile, a first power line (PL1) and a second power line (PL2) may be provided to supply power to each subpixel (SPr, SPg, SPb). A first power terminal (101) may be electrically connected to one end of the first power line (PL1), and a second power terminal (102) may be electrically connected to one end of the second power line (PL2). The first power terminal (101) and the second power terminal (102) may be electrically connected to a power supply unit (not shown) to receive a first potential voltage and a second potential voltage. The second potential voltage may be greater than the first potential voltage, and the first potential voltage may be grounded.

[0067] A first power line (PL1) and a second power line (PL2) may be arranged between non-emitting areas (NEAs) along a first direction (X). The first power line (PL1) and the second power line (PL2) may be electrically connected to each subpixel (SPr, SPg, SPb).

[0068] The contact pad (103) may be located in the non-emitting area (NEA). The first power line (PL1) may be electrically connected to the contact pad (103).

[0069] The auxiliary electrode (AC in FIG. 3) may be positioned in the non-luminous area (NEA). The auxiliary electrode (AC) may be positioned in the non-luminous area (NEA) along the second direction (Y), but is not limited thereto.

[0070] The auxiliary electrode (AC) may be positioned in a non-emitting area (NEA) adjacent to each subpixel (SPr, SPg, SPb). The auxiliary electrode (AC) may be electrically connected to a first power line (PL1) via a contact pad (103).

[0071] The first power line (PL1), the contact pad (103) and the auxiliary electrode (AC) can be arranged in different layers.

[0072] The auxiliary electrode (AC) may be electrically connected to the cathode electrode of an adjacent organic light-emitting element (120r, 120g, 120b) of an adjacent subpixel (SPr, SPg, SPb). For example, when the auxiliary electrode (AC) is positioned between a red subpixel (SPr) and a green subpixel (SPg), the auxiliary electrode (AC) may be electrically connected to the cathode electrode of the red organic light-emitting element (120r) and the cathode electrode of the green organic light-emitting element (120g).

[0073] Accordingly, the auxiliary electrode (AC) can supply the first potential voltage from the first power line (PL1) to the cathode electrode of each organic light-emitting element (120r, 120g, 120b).

[0074] Meanwhile, the second power line (PL2) may be electrically connected to a driving circuit (106) of each subpixel (SPr, SPg, SPb), for example, a driving transistor, but is not limited thereto. Accordingly, when a specific subpixel is selected in response to a scan signal provided through a specific gate line, light having a brightness corresponding to a current flowing in the driving transistor of the specific subpixel may be emitted by the first potential voltage of the first power line (PL1) and the second potential voltage of the second power line (PL2).

[0075] A plurality of organic light-emitting elements (120r, 120g, 120b) may be arranged in a stripe shape along the second direction (Y). That is, the plurality of organic light-emitting elements (120r, 120g, 120b) may be arranged continuously without being separated along the second direction (Y). For example, red organic light-emitting elements (120r) may be arranged continuously along the second direction (Y), green organic light-emitting elements (120g) may be arranged continuously along the second direction (Y), and blue organic light-emitting elements (120b) may be arranged continuously along the second direction (Y).

[0076] As another example, the plurality of organic light-emitting elements (120r, 120g, 120b) may be separated into pixel (P) units or row-line units along the second direction (Y). That is, the red organic light-emitting element (120r) may be separated into pixel (P) units or row-line units along the second direction (Y), the green organic light-emitting element (120g) may be separated into pixel (P) units or row-line units along the second direction (Y), and the blue organic light-emitting element (120b) may be separated into pixel (P) units or row-line units along the second direction (Y).

[0077] The red subpixels (SPr), green subpixels (SPg), and blue subpixels (SPb) can be alternately arranged in units of columns along the first direction (X). That is, the red subpixels (SPr), green subpixels (SPg), and blue subpixels (SPb) having different colors can be sequentially positioned along the first direction (X) to implement an organic light-emitting display device having a side-by-side structure.

[0078] Meanwhile, an asymmetric open-connect (AOC) structure (105) may be positioned in the non-emitting area (NEA). In an embodiment, the asymmetric open-connect structure (105) may include a connecting structure (105A) and a blocking structure (105B). Since the ratios of depth and gap in the undercut structures of each of the connecting structure (105A) and the blocking structure (105B) are different, the structure may be named an asymmetric open-connect structure (105). The depth may represent the width of the undercut structure in the horizontal direction, and the gap may represent the width of the undercut structure in the vertical direction.

[0079] As will be explained later, lateral leakage current between a plurality of subpixels (SPr, SPg, SPb) can be prevented by the asymmetric blocking connection structure (105). The lateral leakage current may refer to a leakage current flowing between adjacent subpixels (SPr, SPg, SPb) along the first direction (X). In addition, an electrical short between an anode electrode and a cathode electrode in the corresponding subpixels (SPr, SPg, SPb) can be prevented by the asymmetric blocking connection structure (105). Therefore, by using the asymmetric blocking connection structure (105), color spotting due to leakage current can be improved and luminous efficiency and brightness can be significantly improved.

[0080] The connection structure (105A) may be a structure that electrically connects the auxiliary electrode (AC) to the cathode electrode of each organic light-emitting element (120r, 120g, 120b). The blocking structure (105B) may be a structure that separates a layer including a low-resistance organic light-emitting material of each organic light-emitting element (120r, 120g, 120b), such as a hole injection layer, a charge generation layer, etc., thereby preventing an electrical short between the anode electrode and the cathode electrode and reducing leakage current between subpixels. The asymmetric blocking connection structure (105) may also be called a 'paradoxical blocking connection'.

[0081] Fig. 3 is a circuit diagram illustrating an organic light-emitting display device according to an embodiment. Fig. 3 may be a circuit diagram for an electrical connection from the first power terminal (101) and the second power terminal (102) in Fig. 2 to a green subpixel (SPg). The circuit diagram illustrated in Fig. 2 may also be equally applied to a circuit diagram for an electrical connection from the first power terminal (101) and the second power terminal (102) to a red subpixel (SPr) or a blue subpixel (SPb).

[0082] As shown in FIG. 3, the first power terminal (101) and the second power terminal (102) can be arranged in the non-display area (NAA), and the first power line (PL1) and the second power line (PL2) can be arranged in the non-display area (NAA) and the display area (AA).

[0083] A contact pad (103) is positioned in the non-emitting area (NEA) and can be electrically connected to a first power line (PL1). The first power line (PL1) can be electrically connected to an auxiliary electrode (AC) through the contact pad (103).

[0084] The organic light-emitting element (120g) may be arranged in the light-emitting area (EA) of the subpixel (SPg), and the connection structure (105A) and the blocking structure (105B) may be arranged in the non-light-emitting area (NEA). The asymmetric blocking connection structure (105) illustrated in FIG. 2 may be formed by the connection structure (105A) and the blocking structure (105B). The auxiliary electrode (AC) may be electrically connected to the cathode electrode (123g) of the organic light-emitting element (120g) by the connection structure (105A). The hole injection layer, etc., of the organic light-emitting element (120g) may be electrically disconnected by the blocking structure (105B), thereby causing an electrical short circuit between the anode electrode (121g) and the cathode electrode (123g).

[0085] As illustrated in Figure 3, various resistances can be formed between each component. Each resistance can be defined as follows.

[0086] R1: Contact resistance between the contact pad (103) and the auxiliary electrode (AC)

[0087] R2: Resistance between the auxiliary electrode (AC) and the cathode electrode

[0088] R4: Resistance between the anode electrode (121g) and the cathode electrode (123g) due to the hole injection layer arranged in the horizontal direction, etc.

[0089] R5: Resistance between the anode electrode (121g) and the cathode electrode (123g) due to multiple organic light-emitting layers arranged in a vertical direction.

[0090] R6: Resistance between the first power line (PL1) and the contact pad (103)

[0091] R7: Resistance between the first power line (PL1) and the auxiliary electrode (AC)

[0092] Among the resistors mentioned above, the hole injection layer forming the fourth resistor (R4) is made of a low-resistance organic light-emitting material, so that leakage current can easily flow through the hole injection layer. If leakage current flows through the hole injection layer, etc., an electrical short between the anode electrode (121g) and the cathode electrode (123g) may cause light not to be emitted from the corresponding subpixel (SPr, SPg, SPb) or the luminance of the light may be significantly lower than the desired luminance.

[0093] In an embodiment, the hole injection layer corresponding to the blocking structure (105B) is cut off by the blocking structure (105B), so that leakage current flowing to the hole injection layer, etc. can be cut off.

[0094] In an embodiment, the cathode electrode (123g) can be easily connected to the auxiliary electrode (AC) by the connection structure (105A), and the deposition area of ​​the organic light-emitting element (120g) can be maximized to improve the light-emitting efficiency.

[0095] Fig. 4a is a cross-sectional view taken along line AA' in the pixel of Fig. 2. Fig. 4b is a cross-sectional view taken along line BB' in the pixel of Fig. 2. Fig. 4c is a cross-sectional view taken along line CC' in the pixel of Fig. 2.

[0096] Referring to FIGS. 1, 2, and 4a to 4c, an organic light-emitting display device according to an embodiment may include a plurality of banks (111-1, 111-2), a plurality of protrusions (130-1, 130-2), a plurality of organic light-emitting elements (120r, 120g, 120b), etc.

[0097] A plurality of banks (111-1, 111-2), a plurality of protrusions (130-1, 130-2), and a plurality of organic light-emitting elements (120r, 120g, 120b) may be arranged on a substrate (110). The plurality of banks (111-1, 111-2), the plurality of protrusions (130-1, 130-2), and / or the plurality of organic light-emitting elements (120r, 120g, 120b) may be arranged on the substrate (110) in a stripe shape along a second direction (Y), respectively. In this case, subpixels of the same color may be arranged along the second direction (Y). For example, a plurality of red subpixels (SPr) may be arranged in a stripe shape along the second direction (Y). The banks (111-1, 111-2) may include an inorganic material or an organic material. For example, the banks (111-1, 111-2) may include inorganic materials such as SiNx, SiON, etc.

[0098] Meanwhile, as illustrated in FIG. 4c, the transverse banks (111-3) may be arranged in row-line units along the second direction (Y). Conversely, the protrusions may not be arranged in row-line units along the second direction (Y). That is, the protrusions may not be arranged on the transverse banks (111-3) along the second direction (Y).

[0099] To distinguish them from the transverse banks (111-3), the first bank (111-1) and the second bank (111-2) may be referred to as longitudinal banks.

[0100] The plurality of subpixels (SPr, SPg, SPb) may be separated from each other by a plurality of banks (111-1, 111-2). A first bank (111-1) may be arranged between a red subpixel (SPr) and a green subpixel (SPg), and a second bank (111-2) may be arranged between a green subpixel (SPg) and a blue subpixel (SPb). Although not shown, a third bank may be arranged between a blue subpixel (SPb) and another red subpixel (SPr).

[0101] A plurality of organic light-emitting elements (120r, 120g, 120b) can be spatially separated and electrically isolated from each other by a plurality of banks (111-1, 111-2). Accordingly, lateral leakage current between the plurality of subpixels (SPr, SPg, SPb) can be blocked, thereby improving color spotting and enhancing light-emitting efficiency and brightness.

[0102] A red organic light-emitting element (120r) may be placed in a red subpixel (SPr), a green organic light-emitting element (120g) may be placed in a green subpixel (SPg), and a blue organic light-emitting element (120b) may be placed in a blue subpixel (SPb).

[0103] The plurality of banks (111-1, 111-2) may have a grid shape. For example, the banks (111-1, 111-2) may be arranged along the perimeter of the subpixels (SPr, SPg, SPb). That is, the plurality of banks (111-1, 111-2) may be arranged between adjacent subpixels (SPr, SPg, SPb) along the first direction (X) and between adjacent subpixels (SPr, SPg, SPb) along the second direction (Y). In this case, the adjacent subpixels (SPr, SPg, SPb) along the first direction (X) may have different colors, while the adjacent subpixels (SPr, SPg, SPb) along the second direction (Y) may have the same color.

[0104] A plurality of organic light-emitting elements (120r, 120g, 120b) can be separated from each other by a plurality of banks (111-1, 111-2). The plurality of banks (111-1, 111-2) can be arranged to distinguish each of the plurality of organic light-emitting elements (120r, 120g, 120b). The red organic light-emitting element (120r) and the green organic light-emitting element (120g) can be separated by the first bank (111-1), and the green organic light-emitting element (120g) and the blue organic light-emitting element (120b) can be separated by the second bank (111-2).

[0105] Meanwhile, the organic light-emitting display device according to the embodiment may include a blocking structure (105B) in the edge region of each of the plurality of banks (111-1, 111-2). For example, the blocking structure (105B) may be arranged in the edge region of the lower side of each of the plurality of banks (111-1, 111-2), but is not limited thereto.

[0106] The blocking structure (105B) may be arranged in an edge region of the banks (111-1, 111-2) between subpixels (SPr, SPg, SPb) along the first direction (X). The blocking structure (105B) may be arranged in an edge region of the banks (111-1, 111-2) between subpixels (SPr, SPg, SPb) along the second direction (Y).

[0107] When organic light-emitting elements (120r, 120g, 120b) are deposited on banks (111-1, 111-2), some layers of the organic light-emitting elements (120r, 120g, 120b) may be disconnected by the blocking structure (105B). For example, the blocking structure (105B) may disconnect a low-resistance layer of each organic light-emitting element (120r, 120g, 120b). The low-resistance layer may include, for example, a hole injection layer, a charge generation layer, etc. The low-resistance layer may mean a layer having a resistance value lower than the resistance value of a high-resistance layer, for example, an organic light-emitting layer, an electron transport layer, an electron injection layer, etc.

[0108] For example, the organic light-emitting layers (122r, 122g, 122b) of each organic light-emitting element (120r, 120g, 120b) may have separation structures (125-1 to 125-3) corresponding to the blocking structure (105B). The separation structures (125-1 to 125-3) may mean a shape in which some layers of the organic light-emitting layers (122r, 122g, 122b) are disconnected. Accordingly, in the separation structures (125-1 to 125-3), for example, a hole injection layer, a charge generation layer, etc. may be disconnected.

[0109] The blocking structure (105B) may include at least one blocking layer (113) extending inward from the side of the bank (111-1, 111-2). An undercut structure may be formed in the edge region of the bank (111-1, 111-2) by the blocking layer (113). The blocking layer (113) may include a silicon-based inorganic material, a metal, or the like. Aluminum (Al), molybdenum (Mo), a molybdenum alloy, or the like may be used as the metal, but is not limited thereto.

[0110] In a case where an organic light-emitting element (120r, 120g, 120b) is deposited on a bank (111-1, 111-2) in which an undercut structure is formed in this way, some layers corresponding to the undercut structure, such as a hole injection layer and a charge generation layer, among the organic light-emitting layers (122r, 122g, 122b) of the organic light-emitting element (120r, 120g, 120b) may be disconnected.

[0111] Meanwhile, as described above, organic light-emitting elements (120r, 120g, 120b) corresponding to each subpixel (SPr, SPg, SPb) may be arranged.

[0112] The red organic light-emitting element (120r) may include an anode electrode (121r), a red organic light-emitting layer (122r), a cathode electrode (123r), etc. The red organic light-emitting layer (122r) may be disposed on the anode electrode (121r), and the cathode electrode (123r) may be disposed on the red organic light-emitting layer (122r). The green organic light-emitting element (120g) may include an anode electrode (121g), a green organic light-emitting layer (122g), a cathode electrode (123g), etc. The green organic light-emitting layer (122g) may be disposed on the anode electrode (121g), and the cathode electrode (123g) may be disposed on the green organic light-emitting layer (122g). The blue organic light-emitting element (120b) may include an anode electrode (121b), a blue organic light-emitting layer (122b), a cathode electrode (123b), etc. The blue organic light-emitting layer (122b) may be disposed on the anode electrode (121b), and the cathode electrode (123b) may be disposed on the blue organic light-emitting layer (122b).

[0113] The anode electrode (121r, 121g, 121b) may include multiple conductive layers. The anode electrode (121r, 121g, 121b) may have a triple structure composed of ITO / Ag alloy / ITO. The anode electrode (121r, 121g, 121b) may have a triple structure composed of ITO / Ag alloy / (Ti, Mo or MoTi).

[0114] One end of the anode electrode (121r, 121g, 121b) may be placed below the bank (111-1, 111-2). That is, one end of the bank (111-1, 111-2) may be placed on one end of the anode electrode (121r, 121g, 121b). One end of the anode electrode (121r, 121g, 121b) may vertically overlap with the bank (111-1, 111-2).

[0115] The red organic light-emitting layer (122r), the green organic light-emitting layer (122g), and the blue organic light-emitting layer (122b) may include at least a hole injection layer including a low-resistance organic light-emitting material.

[0116] Meanwhile, one end of the hole injection layer and / or the charge generation layer may be in contact with the cathode electrode (123r, 123g, 123b). In addition, the lower surface of the hole injection layer may be in contact with the anode electrode (121r, 121g, 121b). In this case, since the resistance of the hole injection layer is small, a leakage current may flow between the anode electrode (121r, 121g, 121b) and the cathode electrode (123r, 123g, 123b), which may cause an electrical short between the anode electrode (121r, 121g, 121b) and the cathode electrode (123r, 123g, 123b).

[0117] However, according to the embodiment, since the hole injection layer and / or the charge generation layer are disconnected by the blocking structure (105B) arranged in the edge region of the bank (111-1, 111-2), the anode electrode (121r, 121g, 121b) and the cathode electrode (123r, 123g, 123b) are electrically disconnected, so that an electrical short can be prevented.

[0118] Meanwhile, the organic light-emitting display device according to the embodiment may include a plurality of protrusions (130-1, 130-2).

[0119] A plurality of organic light-emitting elements (120r, 120g, 120b) can be spatially separated and electrically isolated from each other by a plurality of protrusions (130-1, 130-2). Accordingly, lateral leakage current between the plurality of subpixels (SPr, SPg, SPb) can be blocked, thereby improving color unevenness and enhancing light-emitting efficiency and brightness.

[0120] A plurality of protrusions (130-1, 130-2) may be arranged on the upper side of a plurality of banks (111-1, 111-2). A first protrusion (130-1) may be arranged on the upper side of a first bank (111-1) between a red subpixel (SPr) and a green subpixel (SPg). A second protrusion (130-2) may be arranged on the upper side of a second bank (111-2) between a green subpixel (SPg) and a blue subpixel (SPb).

[0121] The left and right sides of the protrusions (130-1, 130-2) may have shapes that are symmetrical with respect to the central normal line of the protrusions (130-1, 130-2), but this is not limited thereto. For example, the left and right sides of the protrusions (130-1, 130-2) may each have an undercut structure. In this case, the undercut structure on the left side and the undercut structure on the right side may have shapes that are symmetrical with respect to the central normal line of the protrusions (130-1, 130-2).

[0122] The protrusions (130-1, 130-2) may have a connecting structure (105A) including an auxiliary electrode (AC) electrically connected to the cathode electrodes (123r, 123g, 123b).

[0123] The protrusions (130-1, 130-2) may include a first layer (131) and a second layer (132) on the first layer (131).

[0124] The side of the first layer (131) can enter the inside of the protrusion from the side of the second layer (132). Therefore, an undercut structure can be formed on the side of the protrusion by the first layer (131) and the second layer (132). The undercut structure can have a cave shape. For example, the undercut structure can have a U-shaped dongle shape. Therefore, the undercut structure can be called a dongle, a U-shaped cave, a cave, etc. In order to form the undercut structure, the first layer (131) and the second layer (132) can have different etching selectivities. For example, the first layer (131) can include a material having a high etching rate, and the second layer (132) can include a material having a low etching rate. Accordingly, when the first layer (131) and the second layer (132) are etched after a photosensitive pattern is formed on the second layer (132), the side of the first layer (131) is etched faster than the side of the second layer (132), so that an undercut structure can be formed on the side of the protrusion (130-1, 130-2).

[0125] The first layer (131) and / or the second layer (132) may include a metal or a conductive oxide material having excellent electrical conductivity. The metal may include titanium (Ti), molybdenum (Mo), molybdenum-titanium (MoTi), aluminum (Al), copper (Cu), and alloys thereof. The conductive oxide material may include ITO, IZO, and the like.

[0126] Meanwhile, by adjusting the distance between the target and source of the evaporation source (or evaporation source device), the deposition material can be deposited on the substrate (110) at different deposition angles. The target-source distance may be the distance between the evaporation source and the substrate (110). The deposition angle may be the angle of an imaginary line between the evaporation source and the lower edge (132a) of the second layer (132) with respect to the normal direction. For example, the larger the target-source distance, the smaller the deposition angle. The smaller the deposition angle, the closer the layer formed by the deposition material can be deposited to the adjacent subpixel. The larger the deposition angle, the closer the layer can be deposited to the protrusions (130-1, 130-2).

[0127] As shown in FIGS. 4a, 4b, and 4c, by depositing the deposition materials at different deposition angles, one end of the organic light-emitting layer (122r, 122g, 122b) and one end of the first conductive layer (123-1) of the cathode electrode (123r, 123g, 123b) can be positioned differently from each other.

[0128] The cathode electrode (123r, 123g, 123b) may include a plurality of conductive layers (123-1, 123-2). For example, the cathode electrode (123r, 123g, 123b) may include a first conductive layer (123-1) and a second conductive layer (123-2) on the first conductive layer (123-1), but may also include three or more conductive layers.

[0129] One end of the organic light-emitting layer (122r, 122g, 122b) and one end of the first conductive layer (123-1) may be positioned on the upper side of the bank (111-1, 111-2). For example, one end of the organic light-emitting layer (122r, 122g, 122b) may be positioned closer to the first layer (131) than one end of the first conductive layer (123-1).

[0130] The second conductive layer (123-2) may be disposed on the entire area of ​​the substrate (110). The second conductive layer (123-2) may be deposited using a sputtering process. That is, the second conductive layer (123-2) may be disposed on the upper side of the first conductive layer (123-1) of each subpixel (SPr, SPg, SPb), the upper side of the banks (111-1, 111-2), and the side and upper side of the protrusions (130-1, 130-2). The second conductive layer (123-2) may be in contact with the side of the first layer (131) and / or the lower side of the second layer (132).

[0131] For example, the first conductive layer (123-1) may include a metal having excellent electrical conductivity, and the second conductive layer (123-2) may include a conductive oxide material. For example, the first conductive layer (123-1) may include a Mg:Ag alloy, and the second conductive layer (123-2) may include ITO, IZO, and the like.

[0132] A first conductive layer (123-1) can be formed by deposition of a Mg:Ag alloy using an evaporation source. However, since the step coverage characteristics of Mg:Ag are poor, it is difficult for a deposition material including a Mg:Ag alloy to be deposited deep within the undercut structure of the connection structure (105A). In addition, if the film thickness uniformity of the first conductive layer (123-1) including a Mg:Ag alloy is insufficient or the process margin is insufficient, the first conductive layer (123-1) may not be electrically connected to the auxiliary electrode (AC) included in the connection structure (105A), resulting in poor electrical connection.

[0133] To solve this problem, a conductive oxide material such as ITO having excellent step coverage characteristics can be deposited on the substrate (110) using a sputtering process, thereby being deposited deep within the undercut structure of the connection structure (105A). Accordingly, the second conductive layer (123-2) can be stably deposited on the side of the first layer (131), which is the auxiliary electrode (AC), so that electrical connection failure between the cathode electrodes (123r, 123g, 123b) including the first conductive layer (123-1) and the second conductive layer (123-2) and the auxiliary electrode (AC) can be prevented. In addition, the uniformity of the film thickness of the conductive layer can be secured, so that the stability of production quality can be improved.

[0134] When the second conductive layer (123-2) is formed on the first conductive layer (123-1), there is no need to adjust or manage the deposition angle to deposit the first conductive layer (123-1) using an evaporation source. In addition, even if the first conductive layer (123-1) as well as the organic light-emitting layers (122r, 122g, 122b) using an evaporation source are freely deposited without being restricted by the deposition angle, the organic light-emitting layers (122r, 122g, 122b) can be deposited in the corresponding subpixels (SPr, SPg, SPb), and the cathode electrodes (123r, 123g, 123b) can be stably connected to the auxiliary electrodes (AC) of the protrusions (130-1, 130-2) by the second conductive layer (123-2). Therefore, when configured with a combination of the aforementioned connection structure (105A) and blocking structure (105B), productivity and material utilization efficiency can be improved through a more free deposition process.

[0135] In addition, when the organic light-emitting display device is implemented in a top emission manner, the light-emitting efficiency can be improved by utilizing constructive interference between the anode electrode (121r, 121g, 121b) and the cathode electrode (123r, 123g, 123b) by using a cathode electrode (123r, 123g, 123b) including a first conductive layer (123-1) including an Ag:Mg alloy and an anode electrode (121r, 121g, 121b) including a semi-transparent material.

[0136] Meanwhile, the protrusions (130-1, 130-2) may include a fourth layer (134) on the second layer (132). The fourth layer (134) may be omitted. The fourth layer (134) may include an inorganic material such as SiO2, SiNx, or SiONx. The fourth layer (134) may include a conductive oxide material such as ITO. The fourth layer (134) may act as a stopper for the second layer (132). As described above, in order to form a side-by-side structure, the red subpixel (SPr), the green subpixel (SPg), and the blue subpixel (SPb) may be etched twice, respectively. At this time, when these two etchings are performed, the area or thickness of the second layer (132) may be changed. In this case, the deposition angle determined by the lower edge (132a) of the second layer (132) is different, so the deposition area in each subpixel (SPr, SPg, SPb) is different, which ultimately leads to a problem of deterioration in image quality.

[0137] In order to solve the above-mentioned problem, when a fourth layer (134) that acts as a stopper is formed on the second layer (132), even if two etchings are performed, the etching of the second layer (132) is suppressed or prevented by the fourth layer (134), so that the deposition angle determined by the edge (132a) on the lower side of the second layer (132) can be fixed. Accordingly, the deposition area in each subpixel (SPr, SPg, SPb) is secured to the target area, so that the image quality can be improved.

[0138] Although not shown, a third layer may be disposed beneath the first layer (131), but this is not limited thereto. The third layer may include a material having a low etching rate. The third layer may include a metal or a conductive oxide material having excellent electrical conductivity. The third layer may include an inorganic material having a low etching rate.

[0139] When the third layer comprises a metal or a conductive oxide material, the third layer may be an auxiliary electrode (AC).

[0140] The etching rate of the third layer may be the same as or slower than the etching rate of the second layer (132). When the second layer (132) and the third layer are etched simultaneously, since the etching rate of the third layer is the same as or slower than the etching rate of the second layer (132), the side of the third layer may be positioned on the same vertical line as the side of the second layer (132) or may be arranged to extend further in the direction of the adjacent subpixel from the side of the second layer (132).

[0141] Meanwhile, the organic light-emitting display device according to the embodiment may include an encapsulating layer (135). The encapsulating layer (135) may be a blocking layer that prevents moisture or the like from penetrating into the organic light-emitting elements (120r, 120g, 120b).

[0142] Meanwhile, the organic light-emitting display device according to the embodiment may include a plurality of color filter layers (140r, 140g, 140b) and a plurality of encapsulating layers (141r, 141g, 141b).

[0143] The plurality of color filter layers (140r, 140g, 140b) may include a resin material. The plurality of encapsulating layers (141r, 141g, 141b) may include a plurality of layers. Some of the plurality of layers may include an inorganic material, and other layers may include an organic material.

[0144] The red color filter layer (140r) may be arranged in the red subpixel (SPr). The red color filter layer (140r) may be arranged on the red organic light-emitting element (120r) in the red subpixel (SPr), so that only red light corresponding to the target red wavelength band preset to the red color filter layer (140r) among the wavelength bands of red light emitted from the red organic light-emitting element (120r) may be emitted.

[0145] A green color filter layer (140g) may be arranged on a green subpixel (SPg). The green color filter layer (140g) may be arranged on a green organic light-emitting element (120g) in the green subpixel (SPg), so that only green light corresponding to a target green wavelength band preset to the green color filter layer (140g) among the wavelength bands of green light emitted from the green organic light-emitting element (120g) may be emitted.

[0146] The blue color filter layer (140b) may be arranged in the blue subpixel (SPb). The blue color filter layer (140b) may be arranged on the blue organic light-emitting element (120b) in the blue subpixel (SPb), so that only blue light corresponding to a target blue wavelength band preset in the blue subpixel layer can be emitted among the wavelength band of blue light emitted from the blue organic light-emitting element (120b).

[0147] Each of the plurality of color filter layers (140r, 140g, 140b) may have a color filter function that allows only color light of a preset wavelength band to be emitted.

[0148] As described above, the plurality of color filter layers (140r, 140g, 140b) can further improve the color purity of each color compared to when there is no color filter layer, and in particular, can play a role in improving the change in color purity according to the viewing angle in an organic light-emitting display device having a top emission structure. Currently, a polarizing plate is attached to remove light reflected by the reflective material of the anode electrode (121r, 121g, 121b) when external light is incident. However, the most important role of the plurality of color filter layers (140r, 140g, 140b) may be that the plurality of color filter layers (140r, 140g, 140b) can absorb external light to improve the contrast ratio, and further, the polarizing plate can be removed to contribute to cost reduction.

[0149] Meanwhile, the plurality of color filter layers (140r, 140g, 140b) may each have the function of a photosensitive pattern for forming a pattern of an encapsulating layer (135), a cathode electrode (123r, 123g, 123b), and an organic light-emitting layer (122r, 122g, 122b).

[0150] As illustrated in Fig. 4a, the encapsulation layer (135), the cathode electrode (123r), and the red organic light-emitting layer (122r) can be etched using the red color filter layer (140r) so that they can be formed only in the red subpixel (SPr). In this case, one end of the encapsulation layer (135), one end of the cathode electrode (123r), and one end of the red organic light-emitting layer (122r) can be positioned on the same vertical line or diagonal line on the first protrusion (130-1).

[0151] As illustrated in Fig. 4b, the encapsulation layer (135), the cathode electrode (123g), and the green organic light-emitting layer (122g) can be etched using the green color filter layer (140g) so that they can be formed only in the green subpixel (SPg). In this case, one end of the encapsulation layer (135), one end of the cathode electrode (123g), and one end of the green organic light-emitting layer (122g) can be positioned on the same vertical line or diagonal line on the first protrusion (130-1).

[0152] As illustrated in Fig. 4c, the encapsulation layer (135), the cathode electrode (123b), and the blue organic light-emitting layer (122b) can be etched using the blue color filter layer (140b) to be formed only in the blue subpixel (SPb). In this case, one end of the encapsulation layer (135), one end of the cathode electrode (123b), and one end of the blue organic light-emitting layer (122b) can be positioned on the same vertical line or diagonal line on the first protrusion (130-1).

[0153] As an example, it may be formed in the order of a blue organic light-emitting element (120b), a green organic light-emitting element (120g), and a red organic light-emitting element (120r), but is not limited thereto.

[0154] Meanwhile, the encapsulating layer (141r, 141g, 141b) may include multiple layers including organic or inorganic materials.

[0155] The encapsulating layers (141r, 141g, 141b) can protect the plurality of color filter layers (140r, 140g, 140b) made of a resin material from being etched. For example, the blue encapsulating layer (141b) is formed on the blue color filter layer (140b) used for patterning the blue organic light-emitting element (120b), so that the blue encapsulating layer (141b) can prevent the etching of the blue color filter layer (140b) while the green organic light-emitting element (120g) is being etched. Similarly, by forming a green encapsulating layer (141g) on ​​a green color filter layer (140g) used for patterning a green organic light-emitting element (120g), the green encapsulating layer (141g) can prevent the etching of the green color filter layer (140g) while the red organic light-emitting element (120r) is etched. Accordingly, the red encapsulating layer (141r), the green encapsulating layer (141g), and the blue encapsulating layer (141b) can serve as stoppers to prevent etching.

[0156] Meanwhile, each of the plurality of color filter layers (140r, 140g, 140b) may include a light scattering agent or a light diffusing agent. By scattering or diffusing light by the light scattering agent or the light diffusing agent, the luminous efficiency may be improved.

[0157] Meanwhile, the red encapsulating layer (141r), the green encapsulating layer (141g), and the blue encapsulating layer (141b) may each include multiple layers including inorganic materials and organic materials.

[0158] The red encapsulating layer (141r) may be disposed on the red color filter layer (140r), the green encapsulating layer (141g) may be disposed on the green color filter layer (140g), and the blue encapsulating layer (141b) may be disposed on the blue color filter layer (140b).

[0159] The red encapsulating layer (141r), the green encapsulating layer (141g), and the blue encapsulating layer (141b) may each include at least one layer. For example, the red encapsulating layer (141r), the green encapsulating layer (141g), and the blue encapsulating layer (141b) may each include a first inorganic layer, an organic layer on the first inorganic layer, a second inorganic layer on the organic layer, and the like, but are not limited thereto. The first inorganic layer and the second inorganic layer may include an inorganic material such as SiNx, and the organic layer may include a resin material, but are not limited thereto.

[0160] According to an embodiment, a plurality of subpixels (SPr, SPg, SPb) may be sequentially formed to manufacture an organic light-emitting display device having a side-by-side structure. For example, a blue organic light-emitting element (120b), a blue color filter layer (140b), and a blue encapsulation layer (141b) may be formed and patterned over the entire area of ​​a substrate (110) using a photolithography process, thereby forming a blue subpixel (SPb). Thereafter, a green organic light-emitting element (120g), a green color filter layer (140g), and a green encapsulation layer (141g) may be formed and patterned over the entire area of ​​the substrate (110) using a photolithography process, thereby forming a green subpixel (SPg). Thereafter, a red organic light-emitting element (120r), a red color filter layer (140r), and a red encapsulation layer (141r) may be formed and patterned using a photolithography process, thereby forming a red subpixel (SPr).

[0161] Meanwhile, in the first embodiment (Figs. 1 and 2), a red organic light-emitting element (120r), a green organic light-emitting element (120g), and a blue organic light-emitting element (120b) can be arranged in a stripe shape along the second direction (Y).

[0162] Alternatively, although not shown, a red organic light-emitting element (120r), a green organic light-emitting element (120g), and a blue organic light-emitting element (120b) may be arranged spaced apart from each other in a dot shape. The red organic light-emitting element (120r) may be arranged in a red subpixel (SPr), the green organic light-emitting element (120g) may be arranged in a green subpixel (SPg), and the blue organic light-emitting element (120b) may be arranged in a blue subpixel (SPb). One pixel (P) may be configured by the red subpixel (SPr), the green subpixel (SPg), and the blue subpixel (SPb).

[0163] For example, the red organic light-emitting element (120r) and the green organic light-emitting element (120g) may be each disconnected by one row line along the second direction (Y). For example, the blue organic light-emitting element (120b) may be disconnected by two row lines along the second direction (Y).

[0164] For example, the area of ​​the blue organic light-emitting element (120b) may be larger than the area of ​​the red organic light-emitting element (120r) or the area of ​​the green organic light-emitting element (120g). The length of the blue organic light-emitting element (120b) in the second direction (Y) may be similar to the sum of the width of the red organic light-emitting element (120r) and the width of the green organic light-emitting element (120g), but is not limited thereto.

[0165] In a pixel structure in which a red organic light-emitting element (120r), a green organic light-emitting element (120g), and a blue organic light-emitting element (120b) are arranged spaced apart from each other in a dot shape, there is no connection structure (105A in FIG. 4A) between adjacent subpixels along the first direction (X), but an asymmetric blocking connection structure (105), i.e., a connection structure (105A) and a blocking structure (105B), may be provided at at least two or more corners of each subpixel (SPr, SPg, SPb) along the second direction (Y).

[0166] FIGS. 5A to 5O illustrate a manufacturing process of an organic light-emitting display device according to the first embodiment.

[0167] As illustrated in FIG. 5a, an anode electrode (121r, 121g, 121b) and a blocking layer (113) can be formed on each of the red subpixel (SPr), green subpixel (SPg), and blue subpixel (SPb) on the substrate (110) using a first photosensitive pattern (not shown).

[0168] The substrate (110) may include a material with excellent insulating performance. For example, the substrate (110) may include a plastic material, a resin material, glass, etc. The substrate (110) may include a rigid material or a flexible material.

[0169] The anode electrodes (121r, 121g, 121b) may be formed to be spaced apart from each other between the red subpixel (SPr), the green subpixel (SPg), and the blue subpixel (SPb). The blocking layer (113) may be formed to be spaced apart from each other between the red subpixel (SPr), the green subpixel (SPg), and the blue subpixel (SPb).

[0170] The anode electrode (121r, 121g, 121b) may include multiple conductive layers. The anode electrode (121r, 121g, 121b) may have a triple structure composed of ITO / Ag alloy / ITO. The anode electrode (121r, 121g, 121b) may have a triple structure composed of ITO / Ag alloy / (Ti, Mo or MoTi).

[0171] The barrier layer (113) may include a silicon-based inorganic material, a metal such as molybdenum (Mo), etc. The metal may include, but is not limited to, aluminum (Al), molybdenum (Mo), a molybdenum alloy, etc.

[0172] The first photosensitive pattern can be removed.

[0173] An inorganic film and a photosensitive film are formed on a substrate (110), and the photosensitive film is patterned to form a second photosensitive pattern (201).

[0174] The inorganic film may include inorganic materials or organic materials. For example, the inorganic film may include inorganic materials such as SiNx, SiON, etc.

[0175] By etching the inorganic film using the second photosensitive pattern (201), the first bank (111-1) and the second bank (111-2) can be formed. The inorganic film (111a) can be etched until the blocking layer (113) is exposed to the red subpixel (SPr), the green subpixel (SPg), and the blue subpixel (SPb).

[0176] A first bank (111-1) may be formed on a substrate (110) between a red subpixel (SPr) and a green subpixel (SPg). The first bank (111-1) may be disposed on an edge region of a blocking layer (113) between a red subpixel (SPr) and a green subpixel (SPg). A second bank (111-2) may be formed on a substrate (110) between a green subpixel (SPg) and a blue subpixel (SPb). The second bank (111-2) may be disposed on an edge region of a blocking layer (113) between a green subpixel (SPg) and a blue subpixel (SPb).

[0177] A blocking structure (105B) can be formed by etching the blocking layer (113) using the second photosensitive pattern (201). The blocking structure (105B) can have an undercut structure in which the side of the blocking layer (113) is recessed inward from the side of the first bank (111-1) and / or the second bank (111-2).

[0178] As shown in Fig. 5b, the second photosensitive pattern (201) can be removed.

[0179] As shown in Fig. 5c, a first layer (131), a second layer (132), a fourth layer (134), and a photosensitive film are formed on a substrate (110), and the photosensitive film is patterned to form a third photosensitive pattern (202). The fourth layer (134) may be omitted.

[0180] The first layer and the second layer (132) may have different etching selectivities. For example, the etching rate of the first layer (131) may be greater than the etching rate of the second layer (132). At least one of the first layer (131) or the second layer (132) may be an auxiliary electrode for connection to a cathode electrode (123r, 123g, 123b of FIG. 5o). The auxiliary electrode may be connected to the first power line (PL1 of FIG. 3). Accordingly, the cathode electrodes (123r, 123g, 123b) may be electrically connected to the first power line (PL1) via the auxiliary electrode.

[0181] The first layer (131) and / or the second layer (132) may include a metal or a conductive oxide material having excellent electrical conductivity. The metal may include titanium (Ti), molybdenum (Mo), molybdenum-titanium (MoTi), aluminum (Al), copper (Cu), and alloys thereof. The conductive oxide material may include ITO, IZO, and the like.

[0182] The fourth layer (134) may include an inorganic material such as SiO2, SiNx, or SiONx. The fourth layer (134) may include a conductive oxide material such as ITO. The fourth layer (134) may act as a stopper for the second layer (132). That is, the fourth layer (134) may be used as an etch-preventing layer.

[0183] Although not shown, a third layer may be formed beneath the first layer (131). That is, the third layer may be formed on the substrate (110), and the first layer (131) may be formed on the third layer. The third layer may include, for example, a metal with excellent electrical conductivity or a conductive oxide material. Accordingly, the third layer may be an auxiliary electrode.

[0184] As illustrated in FIG. 5D, the fourth layer (134), the second layer (132), and the first layer (131) may be etched using the third photosensitive pattern (202), thereby forming a first protrusion (130-1) and a second protrusion (130-2) having a connection structure (105A). The first protrusion (130-1) may be formed on the first bank (111-1) between the red subpixel (SPr) and the green subpixel (SPg), and the second protrusion (130-2) may be formed on the second bank (111-2) between the green subpixel (SPg) and the blue subpixel (SPb).

[0185] Since the etching rate of the first layer (131) is greater than the etching rate of the second layer (132), the side of the first layer (131) is etched faster than the side of the second layer (132), so that an undercut structure of the connection structure (105A) in which the side of the first layer (131) is pushed inward from the side of the second layer (132) can be formed.

[0186] When the fourth layer (134) is used as an etching prevention layer, the second layer (132) formed under the fourth layer (134) is protected from etching by the fourth layer (134), so the side of the second layer (132) and the side of the fourth layer (134) can be positioned on the same vertical line or diagonal line.

[0187] Meanwhile, although not shown, the blocking layer (113) may not be etched in the process illustrated in FIG. 5b, and may also be etched together with the etching of the first layer (131), the second layer, and the fourth layer (134) in the process illustrated in FIG. 5d. Accordingly, since the connection structure (105A) and the blocking structure (105B) are formed in a single step using the same photosensitive pattern (202), the number of masks can be reduced, the process can be simplified, and costs can be reduced.

[0188] The third photosensitive pattern (202) can be removed.

[0189] As shown in FIG. 5e, a blue organic light-emitting layer (122b) and a first conductive layer (123-1) can be formed on a substrate (110).

[0190] Although not shown, the blue organic light-emitting layer (122b) may include a hole injection layer, etc. In the case of a blue organic light-emitting device (120b) having a two-stack structure, the blue organic light-emitting layer (122b) may include a hole injection layer, a charge generation layer, etc.

[0191] The first conductive layer (123-1) may include a single layer including a metal such as a Mg:Ag alloy. By depositing a deposition material made of a metal such as a Mg:Ag alloy on the substrate (110), the first conductive layer (123-1) may be formed on one side region of each of the blue subpixel (SPb) and the first bank (111-1) and the second bank (111-2). Since the deposition material is not deposited on the inside of the undercut structure of the connection structure (105A), the first conductive layer (123-1) may not be electrically connected to the auxiliary electrode.

[0192] As shown in FIG. 5f, a second conductive layer (123-2) and a sealing layer (not shown) can be formed on the first conductive layer (123-1).

[0193] The second conductive layer (123-2) may include a conductive oxide material such as ITO. The sealing layer may include an inorganic material.

[0194] Conductive oxide materials such as ITO have excellent step coverage characteristics. Therefore, when a deposition material made of a conductive oxide material is deposited on the substrate (110) through a sputtering process, the second conductive layer (123-2) can be formed not only on one side region of the blue subpixel (SPb) and each of the first bank (111-1) and the second bank (111-2), but also on the inside of the undercut structure of the connection structure (105A). Accordingly, the second conductive layer (123-2) can be electrically connected to the auxiliary electrode in the connection structure (105A) of the second protrusion (130-2).

[0195] As illustrated in FIG. 5g, a blue color filter layer (140b) may be formed on the second conductive layer (123-2). The blue color filter layer (140b) may include a resin material.

[0196] Using a fourth photosensitive pattern (not shown), the blue color filter layer (140b), the encapsulation layer, the second conductive layer (123-2), the first conductive layer (123-1), and the blue organic light-emitting layer (122b) are etched, so that the blue color filter layer (140b), the encapsulation layer, the second conductive layer (123-2), the first conductive layer (123-1), and the blue organic light-emitting layer (122b) can be formed in the blue subpixel (SPb). The blue color filter layer (140b), the encapsulation layer, the second conductive layer (123-2), the first conductive layer (123-1), and the blue organic light-emitting layer (122b) can be formed on one side region of the second protrusion (130-2).

[0197] A cathode electrode (123b) may be formed by the first conductive layer (123-1) and the second conductive layer (123-2). A blue organic light-emitting element (120b) may be formed by the anode electrode (121b), the blue organic light-emitting layer (122b), and the cathode electrode (123b) formed in the blue subpixel (SPb).

[0198] The fourth photosensitive pattern can be removed.

[0199] As shown in FIG. 5h, a blue sealing layer (141b) can be formed on the substrate (110).

[0200] The blue encapsulation layer (141b) can be etched using the fifth photosensitive pattern (not shown), so that the blue encapsulation layer (141b) can be formed on the blue color filter layer (140b) in the blue subpixel (SPb).

[0201] The fifth photosensitive pattern can be removed.

[0202] As illustrated in FIG. 5i, a green organic light-emitting layer (122g), a first conductive layer (123-1), a second conductive layer (123-2), and an encapsulating layer (135) may be formed on a substrate (110). A cathode electrode (123g) may be formed by the first conductive layer (123-1) and the second conductive layer (123-2). Accordingly, a green organic light-emitting element (120g) may be formed by the anode electrode (121g), the green organic light-emitting layer (122g), and the cathode electrode (123g) in a green subpixel (SPg).

[0203] The first conductive layer (123-1) including a metal such as Mg:Ag is not connected to the auxiliary electrode, and the second conductive layer (123-2) including a conductive oxide material such as ITO can be connected to the auxiliary electrode in each of the connection structure (105A) of the first protrusion (130-1) and the connection structure (105A) of the second protrusion (130-2).

[0204] Although not shown, the green organic light-emitting layer (122g) may include a hole injection layer, etc. In the case of a green organic light-emitting device (120g) having a two-stack structure, the green organic light-emitting layer (122g) may include a hole injection layer, a charge generation layer, etc.

[0205] As illustrated in FIG. 5j, a green color filter layer (140g) may be formed on a substrate (110). The green color filter layer (140g) may include a resin material.

[0206] Using the sixth photosensitive pattern (not shown), the green color filter layer (140g), the encapsulation layer (135), the cathode electrode (123g), and the green organic light-emitting layer (122g) are etched, so that the green color filter layer (140g), the encapsulation layer (135), the cathode electrode (123g), and the green organic light-emitting layer (122g) can be formed in the green subpixel (SPg). The green color filter layer (140g), the encapsulation layer (135), the cathode electrode (123g), and the green organic light-emitting layer (122g) can be formed on one side region of the first protrusion (130-1) and the other side region of the second protrusion (130-2).

[0207] The sixth photosensitive pattern can be removed.

[0208] As shown in FIG. 5k, a green encapsulating layer (141g) can be formed on the substrate (110).

[0209] Using the seventh photosensitive pattern (not shown), the green encapsulation layer (141g) may be etched so that the green encapsulation layer (141g) may be formed on the green color filter layer (140g) in the blue subpixel (SPb) and the green subpixel (SPg). Although not shown, the green encapsulation layer (141g) may not be formed in the blue subpixel (SPb).

[0210] The seventh photosensitive pattern can be removed.

[0211] As illustrated in FIG. 5l, a red organic light-emitting layer (122r), a first conductive layer (123-1), a second conductive layer (123-2), and an encapsulating layer (135) may be formed on a substrate (110). A cathode electrode (123r) may be formed by the first conductive layer (123-1) and the second conductive layer (123-2). Accordingly, a red organic light-emitting element (120r) may be formed by the anode electrode (121r), the red organic light-emitting layer (122r), and the cathode electrode (123r) in a red subpixel (SPr).

[0212] The first conductive layer (123-1) including a metal such as Mg:Ag is not connected to the auxiliary electrode, and the second conductive layer (123-2) including a conductive oxide material such as ITO can be connected to the auxiliary electrode in the connection structure (105A) of the first protrusion (130-1).

[0213] Although not shown, the red organic light-emitting layer (122r) may include a hole injection layer, etc. In the case of a red organic light-emitting element (120r) having a two-stack structure, the red organic light-emitting layer (122r) may include a hole injection layer, a charge generation layer, etc.

[0214] As illustrated in FIG. 5m, a red color filter layer (140r) may be formed on a substrate (110). The red color filter layer (140r) may include a resin material.

[0215] Using the eighth photosensitive pattern (not shown), the red color filter layer (140r), the encapsulation layer (135), the cathode electrode (123r), and the red organic light-emitting layer (122r) are etched, so that the red color filter layer (140r), the encapsulation layer (135), the cathode electrode (123r), and the red organic light-emitting layer (122r) can be formed in the red subpixel (SPr). The red color filter layer (140r), the encapsulation layer (135), the cathode electrode (123r), and the red organic light-emitting layer (122r) can be formed on the other side region of the first protrusion (130-1).

[0216] The eighth photosensitive pattern can be removed.

[0217] As shown in FIG. 5n, a red sealing layer (141r) can be formed on the substrate (110).

[0218] The red encapsulation layer (141r) may be etched using a ninth photosensitive pattern (not shown), so that the red encapsulation layer (141r) may be formed on the red color filter layer (140r) in the blue subpixel (SPb), the green subpixel (SPg), and the red subpixel (SPr). Although not shown, the red encapsulation layer (141r) may not be formed in the blue subpixel (SPb) and the green subpixel (SPg).

[0219] The ninth photosensitive pattern can be removed.

[0220] As illustrated in FIG. 5o, a plurality of sealing layers (143, 144) may be formed on the substrate (110). For example, the sealing layer (143) may include a resin material such as polycaprolactone (PCL), and the sealing layer (144) may include an inorganic material such as silicon nitride (SiNx).

[0221] Thereafter, a pad open process is performed using the 10th photosensitive pattern (not shown), so that the first power line (PL1 in FIG. 3) can be electrically connected to the auxiliary electrode through the contact pad (103), as shown in FIG. 3. The 10th photosensitive pattern can be removed.

[0222] Afterwards, after a defect inspection process, a repair process, etc. are performed, a protective film is attached to the substrate (110), thereby manufacturing an organic light-emitting display element.

[0223] In the above, it is described that the blue organic light-emitting element (120b), the green organic light-emitting element (120g), and the red organic light-emitting element (120r) are formed in that order, but the order can be changed.

[0224] Fig. 6 is an enlarged cross-sectional view of the asymmetric blocking connection structure in Fig. 5o. Fig. 7 is a cross-sectional view illustrating the blocking structure in Fig. 6.

[0225] Although the drawing shows the connection structure (105A) of the first protrusion (130-1) and the blocking structure (105B) formed on the first bank (111-1), the same can be applied to the connection structure of the second protrusion (130-2) and the blocking structure formed on the second bank (111-2).

[0226] As illustrated in FIG. 6, the connection structure (105A) of the first protrusion (130-1) may have an undercut structure. The undercut structure of the connection structure (105A) allows the green organic light-emitting layer (122g) and the first conductive layer (123-1) to be formed in the green subpixel (SPg). At this time, even if the first conductive layer (123-1) is not electrically connected to the auxiliary electrode, i.e., the first layer (131) and / or the second layer (132), the second conductive layer (123-2) may be electrically connected to the auxiliary electrode in the connection structure (105A). Accordingly, the stability of the electrical connection of the cathode electrode (123g) including the first conductive layer (123-1) and the second conductive layer (123-2) can be secured.

[0227] As illustrated in FIGS. 6 and 7, the green organic light-emitting layer (122g) may be disconnected by the blocking structure (105B). The green organic light-emitting element (120g) may include a hole injection layer, a charge generation layer, etc. In this case, the hole injection layer and / or the charge generation layer may be disconnected corresponding to the blocking structure (105B). Accordingly, the leakage current flowing through the hole injection layer or the charge generation layer between the anode electrode (121g) and the cathode electrode (123g) is blocked, thereby improving the light-emitting efficiency and brightness.

[0228] The blocking structure (105B) may have a blocking depth (OD) and a blocking gap (OD). The blocking depth (OD) may be a depth at which the blocking layer (113) is etched. The blocking gap (OD) may be a thickness of the blocking layer (113). The blocking depth (OD) and the blocking gap (OD) need to be designed so that at least the charge generation layer is disconnected while the cathode electrode (123b) of the blue organic light-emitting element (120b) with the smallest thickness is not disconnected.

[0229] Meanwhile, as illustrated in FIG. 5o, the red organic light-emitting layer (122r) and the green organic light-emitting layer (122g) may be separated from each other on the upper side of the first protrusion (130-1), and the green organic light-emitting layer (122g) and the blue organic light-emitting layer (122b) may be separated from each other on the upper side of the second protrusion (130-2). Accordingly, the leakage current flowing in the first direction (X) between the red subpixel (SPr), the green subpixel (SPg), and the blue subpixel (SPb), i.e., the lateral leakage current, may be blocked, thereby improving the light-emitting efficiency and brightness.

[0230] Meanwhile, as described above, the blocking structure (105B) can be formed by the blocking layer (113). During the formation of the blocking structure (105B), yield management, such as dark spot defects, is very important.

[0231] The anode electrode (121r, 121g, 121b) may have a triple structure composed of ITO / Ag alloy / ITO. The anode electrode (121r, 121g, 121b) may be formed through wet etching. During wet etching, a compound based on silver (Ag) may be generated and remain as particles. Therefore, the removal of particles composed of a compound based on Ag may be important for yield management.

[0232] In addition, particles generated during dry etching of layers other than the anode electrode (121r, 121g, 121b) may also remain on the surface of the anode electrode (121r, 121g, 121b) and cause dark spot defects.

[0233] Referring to FIGS. 8A to 8E, a method of forming a blocking structure (105B) to remove these particles is described.

[0234] Figures 8a to 8e illustrate a process for forming a blocking structure according to an embodiment. While the drawings illustrate a process for forming a blocking structure (105B) in a first bank (111-1) adjacent to a green subpixel (SPg), the same process can also be applied to a process for forming a blocking structure in a second bank (111-2).

[0235] As shown in Fig. 8a, an anode electrode (121g) and a blocking layer (113) are formed on a substrate (110), and a photosensitive pattern (203) can be formed on the blocking layer (113).

[0236] As shown in Fig. 8b, the anode electrode (121g) and the blocking layer (113) can be etched using the photosensitive pattern (203), so that the anode electrode (121g) and the blocking layer (113) can be formed in the green subpixel (SPg).

[0237] The photosensitive pattern (203) can be removed.

[0238] When the photosensitive pattern (203) is removed, particles (161) may remain on the upper surface of the blocking layer (113).

[0239] As illustrated in Fig. 8c, an inorganic film (111a) may be formed on the substrate (110). In this case, the particles (161) may be positioned between the blocking layer (113) and the inorganic film (111a) without being removed.

[0240] As illustrated in FIG. 8d, a photosensitive pattern (203) can be formed on the inorganic film (111a). Using the photosensitive pattern (203), the inorganic film (111a) can be etched, thereby forming a first bank (111-1) between the red subpixel (SPr) and the green subpixel (SPg).

[0241] Since the inorganic film (111a) is etched until the blocking layer (113) is exposed, the particles (161) remaining on the upper surface of the blocking layer (113) can be removed through this etching process.

[0242] However, another particle (162) may remain on the upper surface of the barrier layer (113) through etching of the weapon film (111a).

[0243] As shown in FIG. 8e, a blocking layer (113) can be etched using a photosensitive pattern (203) to form a blocking structure (105B).

[0244] Since the barrier layer (113) is etched until the anode electrode (121g) is exposed, any remaining particles (162) on the upper surface of the barrier layer (113) can be removed.

[0245] The photosensitive pattern (203) can be removed. The photosensitive pattern (203) can be the second photosensitive pattern (201) illustrated in FIG. 5A.

[0246] After each etching process is performed above, a cleaning process can be performed.

[0247] In addition to the formation process of the blocking structure (105B) as described above, particles (161, 162) generated during wet etching or dry etching are removed through a cleaning process performed after each etching process, thereby preventing poor image quality and improving yield.

[0248] Meanwhile, the asymmetric blocking connection structure (105) according to the embodiment can be formed through a two-mask process (Figs. 9a to 9p) or a one-mask process (Figs. 10a to 10h).

[0249] [2-mask process]

[0250] Figures 9a to 9p illustrate a two-mask process for forming an asymmetric blocking connection structure according to an embodiment. While the drawings illustrate a process for forming a blocking structure (105B) in a first bank (111-1) adjacent to a green subpixel (SPg), the same process can also be applied to a process for forming a blocking structure in a second bank (111-2).

[0251] As shown in Fig. 9a, after the substrate (110) is cleaned, an anode electrode (121g) can be formed on the substrate (110).

[0252] Specifically, by sequentially depositing ITO, Ag alloy, and ITO on a substrate (110), an anode electrode (121g) made of ITO / Ag alloy / ITO can be formed on the substrate (110).

[0253] As illustrated in Fig. 9b, after the substrate (110) is cleaned, a barrier layer (113) such as molybdenum (Mo) may be formed on the anode electrode (121g). Instead of molybdenum (Mo), a silicon-based inorganic material may be used.

[0254] As shown in Fig. 9c, after the substrate (110) is cleaned, a photosensitive pattern (204) can be formed on the blocking layer (113).

[0255] As shown in FIG. 9d, the blocking layer (113) can be wet etched using a photosensitive pattern (204).

[0256] As illustrated in Fig. 9e, the ITO / Ag alloy / ITO of the anode electrode (121g) can be etched in batches using the photosensitive pattern (204). The side of the blocking layer (113) and the side of the anode electrode (121g) can be positioned on the same vertical line or diagonal line, but this is not limited thereto.

[0257] As shown in Fig. 9f, the photosensitive pattern (04) can be removed.

[0258] As shown in FIG. 9g, after the substrate (110) is cleaned, an inorganic film (111a), such as silicon nitride (SiNx), can be deposited on the substrate (110).

[0259] As shown in FIG. 9h, after the substrate (110) is cleaned, a photosensitive pattern (205) can be formed on the inorganic film (111a).

[0260] As illustrated in FIG. 9i, after the substrate (110) is cleaned, the inorganic film (111a) may be dry etched using a photosensitive pattern (205) to form a first bank (111-1). The first bank (111-1) may be formed on the substrate (110) between the red subpixel (SPr) and the green subpixel (SPg).

[0261] As shown in FIG. 9j, the photosensitive pattern (205) can be removed.

[0262] As shown in FIG. 9k, after the substrate (110) is cleaned, titanium (Ti) may be deposited on the substrate (110) to form a third layer (133).

[0263] As shown in Fig. 9l, a first layer (131) and a second layer (132) can be formed by sequentially depositing aluminum (Al) and titanium (Ti) on a third layer (133).

[0264] As illustrated in FIG. 9m, after the substrate (110) is cleaned, a photosensitive pattern (206) can be formed on the second layer (132).

[0265] As shown in FIG. 9n, after the substrate (110) is cleaned, the second layer (132), the first layer (131), and the third layer (133) can be sequentially dry etched using a photosensitive pattern (206) to form a first protrusion (130-1).

[0266] As illustrated in FIG. 9o, after the substrate (110) is cleaned, the first layer (131) and the blocking layer (113) can be wet-etched using a photosensitive pattern (206) to simultaneously form a connection structure (105A) and a blocking structure (105B). An asymmetric blocking connection structure (105) can be formed by the connection structure (105A) and the blocking structure (105B).

[0267] Accordingly, a connection structure (105A) having an undercut structure that extends inward from the side of the second layer (132) or the side of the third layer (133) can be formed on the side of the first layer (131). In addition, a blocking structure (105B) having an undercut structure that extends inward from the side of the first bank (111-1) can be formed on the side of the blocking layer (113).

[0268] As illustrated in FIG. 9p, the photosensitive pattern (206) can be removed. Thereafter, the presence of a driving circuit, for example, at least one transistor, provided in each subpixel of the substrate (110) can be inspected for defects.

[0269] [1 mask process]

[0270] Figures 10a to 10h illustrate a single mask process for forming an asymmetric blocking connection structure according to an embodiment. While the drawings illustrate a process for forming a blocking structure (105B) in a first bank (111-1) adjacent to a green subpixel (SPg), the same process can also be applied to a process for forming a blocking structure in a second bank (111-2).

[0271] The process of forming an anode electrode (121g) and a blocking layer (113) in a green subpixel (SPg) is the same as in FIGS. 9a to 9f, so a detailed description is omitted.

[0272] As shown in Fig. 10a, after the substrate (110) is cleaned, an inorganic film (111a), such as silicon nitride (SiNx), can be deposited on the substrate (110).

[0273] As shown in Fig. 10b, after the substrate (110) is cleaned, titanium (Ti) can be deposited on the substrate (110) to form a third layer (133).

[0274] As shown in Fig. 10c, a first layer (131) and a second layer (132) can be formed by sequentially depositing aluminum (Al) and titanium (Ti) on a third layer (133).

[0275] As shown in FIG. 10d, after the substrate (110) is cleaned, a photosensitive pattern (207) can be formed on the second layer (132).

[0276] As shown in FIG. 10e, after the substrate (110) is cleaned, the second layer (132), the first layer (131), and the third layer (133) can be sequentially dry etched using a photosensitive pattern (207) to form a first protrusion (130-1).

[0277] For example, the second layer (132) can be etched through dry etching using CF4 / O2 gas. For example, the first layer (131) can be etched through dry etching using Cl and / or HCl gas. For example, the third layer (133) can be etched through dry etching using CF4 / O2 gas.

[0278] The side of the second layer (132), the side of the first layer (131) and the side of the third layer (133) may be positioned on the same vertical line or diagonal line.

[0279] As illustrated in FIG. 10f, after the substrate (110) is cleaned, the inorganic film (111a) may be dry etched using a photosensitive pattern (207), thereby forming a first bank (111-1). Accordingly, the first protrusion (130-1) and the first bank (111-1) may be formed using the same photosensitive pattern (207).

[0280] For example, the inorganic film (111a) can be etched through dry etching using CF4 and He gases.

[0281] As illustrated in FIG. 10g, after the substrate (110) is cleaned, the first layer (131) and the blocking layer (113) are wet-etched using a photosensitive pattern (207), so that a connection structure (105A) and a blocking structure (105B) each having an undercut structure can be simultaneously formed. An asymmetric blocking connection structure (105) can be formed by the connection structure (105A) and the blocking structure (105B).

[0282] As illustrated in FIG. 10h, the photosensitive pattern (207) can be removed. Thereafter, the presence of a defect in the driving circuit, for example, at least one transistor, provided in each subpixel (SPr, SPg, SPb) of the substrate (110) can be inspected.

[0283] Meanwhile, as illustrated in FIGS. 11a to 11c, other modifications of the aforementioned one-mask process (FIGS. 10a to 10h) are also possible.

[0284] Figures 11a to 11c illustrate other variations of the process of Figures 10e to 10g. The process illustrated in Figure 11a corresponds to the process illustrated in Figure 10e, the process illustrated in Figure 11b corresponds to the process illustrated in Figure 10f, and the process illustrated in Figure 11c may correspond to the process illustrated in Figure 10g.

[0285] As shown in Fig. 11a, the second layer (132) can be etched using a photosensitive pattern (207) through dry etching using CF4 / O2 gas.

[0286] Unlike FIG. 10e, the first layer (131) can be etched through wet etching. Aluminum (Al) forming the first layer (131) can be rapidly etched through wet etching. Accordingly, a connection structure (105A) having an undercut structure that extends inward from the side of the second layer (132) can be formed on the side of the first layer (131).

[0287] For example, the third layer (133) can be etched through dry etching using CF4 / O2 gas.

[0288] Similar to FIG. 10f, as shown in FIG. 11b, the inorganic film (111a) can be etched using a photosensitive pattern (207) through dry etching using CF4 and He gases, thereby forming a first bank (111-1).

[0289] As shown in Fig. 11c, a blocking layer (113) can be wet-etched using a photosensitive pattern (207) to form a blocking structure (105B).

[0290] When the barrier layer (113) is wet-etched, the first layer (131) may also be etched. Accordingly, the aperture depth (D2) of the connection structure (105A) illustrated in FIG. 11c may be greater than the aperture depth (D1) of the connection structure (105A) illustrated in FIG. 10g. Therefore, when a connection structure (105A) having a large aperture depth (D2) is required, it may be desirable to perform the processes illustrated in FIGS. 11a to 11c.

[0291] Meanwhile, in an organic light-emitting display device having a side-by-side structure manufactured using a photolithography process, a red subpixel (SPr), a green subpixel (SPg), and a blue subpixel (SPb) may be sequentially formed. For example, after a red organic light-emitting layer (122r), an encapsulation layer (135), etc. are deposited on a substrate (110), the red organic light-emitting layer (122r), the encapsulation layer (135) may be etched to form only the red subpixel (SPr). During such an etching process, the photosensitive film or the encapsulation layer (135) may not be removed from the undercut structure of the connection structure (105A) of the first protrusion (130-1), i.e., the U-cavity, so that a residual film may be generated.

[0292] Referring to FIGS. 12a to 12d, the occurrence of a residual film is described.

[0293] Figures 12a to 12d illustrate the occurrence of residual films during the formation process of a red subpixel. While the drawings illustrate the first protrusion (130-1), the same principles may also be applied to the second protrusion (130-2).

[0294] As illustrated in Fig. 12a, a first protrusion (130-1) having a connection structure (105A) may be formed on the first bank (111-1). A substrate (110) may be provided under the first bank (111-1).

[0295] As illustrated in FIG. 12b, a red organic light-emitting element (120r) and an encapsulating layer (135) may be formed on a substrate (110). The cathode electrode (123r) of the red organic light-emitting element (120r) may be electrically connected to the first layer (131) and the third layer (133) of the first protrusion (130-1). The first layer (131) and the third layer (133) may be used as auxiliary electrodes.

[0296] The sealing layer (135) may include a first-first insulating layer (135-1), a first-second insulating layer (135-2), and a first-third insulating layer (135-3). For example, the first-first insulating layer (135-1) may include an inorganic material such as silicon oxide (SiOx), the first-second insulating layer (135-2) may include an inorganic material such as silicon nitride (SiNx), and the first-third insulating layer (135-3) may include an inorganic material such as silicon oxide (SiOx), but is not limited thereto.

[0297] The sealing layer (135) can be formed in the undercut structure of the connecting structure (105A), i.e., the U-cavity portion.

[0298] As illustrated in FIG. 12c, a photosensitive pattern (208) may be formed on the substrate (110). The photosensitive pattern (208) may be formed on one side area of ​​the red subpixel (SPr) and the first protrusion (130-1).

[0299] As illustrated in FIG. 12d, the sealing layer (135) and the cathode electrode (123r) of the red organic light-emitting element (120r) and the red organic light-emitting layer (122r) are dry-etched using the photosensitive pattern (208), so that the sealing layer (135), the cathode electrode (123r) and the red organic light-emitting layer (122r) can be formed only in one area of ​​the red subpixel (SPr) and the first protrusion (130-1).

[0300] However, the encapsulation layer (135) or the photosensitive pattern (208) may remain as a residual film (230, 230a) in the undercut structure of the first protrusion (130-1) adjacent to the green subpixel (SPg). This residual film (230, 230a) may remain between the side of the first layer (131) of the first protrusion (130-1) and the lower side of the second layer (132).

[0301] The photosensitive pattern (208) may include a transparent resin material having high purity, low water vapor transmission rate (WVTR), etc. Even if a removal process of the photosensitive pattern (208) is performed, a part of the photosensitive pattern (208) may remain without being removed inside the undercut structure, thereby forming a resin layer (136) as a residual film.

[0302] These residual films (230, 230a) are foreign substances that help form new moisture penetration channels, causing poor image quality such as dark spots, and therefore must be removed.

[0303] In particular, the residual film (230, 230a) becomes a penetration path for developers, etchants, strippers, etc. in the wet process. In addition, it becomes a penetration path for moisture after the product is completed in the dry process, which can cause dark spots in long-term reliability and be fatal to the product's lifespan. Since the subpixel formed last, for example, the blue subpixel (SPb), undergoes two patterning steps to form the red subpixel (SPr) and the green subpixel (SPg), the dark spots caused by the residual film (230, 230a) increase further, further increasing the defect rate.

[0304] Figure 13a illustrates a residual film generated during the formation process of a red subpixel.

[0305] As illustrated in FIG. 13A, when a connection structure (105A) is formed on the first side of the first protrusion (130-1) adjacent to the green subpixel (SPg) before forming the green subpixel (SPg), a residual film (230, 230a) may be formed on the undercut structure of the connection structure (105A).

[0306] As shown in Fig. 13a, the sealing layer (135) and the red organic light-emitting element (120r) formed on the substrate (110) are dry etched, so that the sealing layer (135) and the cathode electrode (123r) of the red organic light-emitting element (120r) and the red organic light-emitting layer (122r) can be formed on one side region of the red subpixel (SPr) and the first protrusion (130-1).

[0307] Thereafter, an ashing process is performed so that the photosensitive pattern (208 in FIG. 12d) is stripped and may remain in the undercut structure on both sides of the first protrusion (130-1). The ashing process may be performed as an anisotropic process.

[0308] Moisture penetration can be blocked by the remaining photosensitive pattern (208) in the undercut structure on both sides of the first protrusion (130-1).

[0309] An encapsulation layer (135) and a photosensitive pattern (208) may remain in the undercut structure of the first protrusion (130-1). The encapsulation layer (135) and the photosensitive pattern (208) remaining in the undercut structure of the first protrusion (130-1) adjacent to the red subpixel (SPr) may serve to prevent moisture penetration. However, the encapsulation layer (135) and the photosensitive pattern (208) remaining in the undercut structure of the first protrusion (130-1) adjacent to the green subpixel (SPg) or the undercut structure of the second protrusion (130-2) adjacent to the blue subpixel (SPb) may cause dark spots in the green subpixel (SPg) or the blue subpixel (SPb).

[0310] Figure 13b shows an example in which no residual film is formed.

[0311] As shown in Fig. 13b, the photosensitive pattern (208 in Fig. 13a) is removed through wet etching, so that the photosensitive pattern (208) does not remain as a residual film (230) in the undercut structure on the first protrusion (130-1) adjacent to the green subpixel (SPg).

[0312] Nonetheless, the encapsulation layer (135) may still remain as a residual film (230a) on the undercut structure of the first protrusion (130-1) adjacent to the green subpixel (SPg). In addition, the red organic light-emitting layer (122r) on the first protrusion (130-1) may be etched during the strip process, which may cause potential image quality degradation due to another foreign substance or may become a new path for moisture penetration in a subsequent process.

[0313] To solve this problem, a JIT (just in time) process technology may be used in the embodiment. The JIT process technology may be a process technology that can immediately form the connection structure (105A) or the blocking structure (105B) when formation of the connection structure (105A) or the blocking structure (105B) is required. That is, by forming the connection structure (105A) or the blocking structure (105B) immediately when needed without forming it in advance, defects such as the dark spot described above can be prevented. Here, the connection structure (105A) or the blocking structure (105B) may have an undercut structure or a U-cavity. The JIT process technology of the embodiment may be applied to a series of overall processes for forming the connection structure (105A) and / or the blocking structure (105B) immediately when needed, and for forming the corresponding subpixel after the corresponding connection structure (105A) and / or the blocking structure (105B) is formed.

[0314] FIGS. 14A to 14D illustrate a process for forming a red subpixel so that no residual film is formed on the second side of the first protrusion adjacent to the green subpixel. Although the drawings illustrate a process for forming a red subpixel (SPr), the same process can be applied to a process for forming a green subpixel (SPg) or a blue subpixel (SPb). In addition, although the drawings illustrate that a connection structure (105A) and a blocking structure (105B) are formed using a JIT process technology, the blocking structure (105B) may be omitted.

[0315] As shown in Fig. 14a, anode electrodes (121r, 121g) can be formed on the red subpixel (SPr) and green subpixel (SPg) of the substrate (110), respectively.

[0316] A first bank (111-1) and a first protrusion (130-1) may be formed on a substrate (110) between a red subpixel (SPr) and a green subpixel (SPg). A blocking structure (105B) may be formed in an edge area on the lower side of the first bank (111-1).

[0317] A first connection structure (171) is formed on the first side of the first protrusion (130-1), that is, the side adjacent to the red subpixel (SPr), but a second connection structure may not be formed on the second side of the first protrusion (130-1), that is, the side adjacent to the green subpixel (SPg). This is to prevent a residual film from being generated by the second connection structure when the sealing layer (135) or the photosensitive pattern is later removed. The second connection structure on the second side of the first protrusion (130-1) may be formed later when the green subpixel (SPg) is formed.

[0318] As shown in Fig. 14b, a red organic light-emitting layer (122r), a cathode electrode (123r), an encapsulating layer (135), etc. can be formed on a substrate (110).

[0319] As shown in Fig. 14c, a photosensitive film is formed and patterned on the substrate (110), so that a photosensitive pattern can be formed on one side area of ​​the red subpixel (SPr) and the first protrusion (130-1).

[0320] The encapsulation layer (135), cathode electrode (123r), and red organic light-emitting layer (122r) on the other side of the green subpixel (SPg) and the first protrusion (130-1) can be removed through an etching process using a photosensitive pattern. Thereafter, the photosensitive pattern can be removed. Accordingly, a red organic light-emitting element (120r) can be formed in the red subpixel (SPr).

[0321] As illustrated in Fig. 14c, the second connection structure (172) is not yet formed on the second side of the first protrusion (130-1). In addition, the second side of the first protrusion (130-1) may have a flat surface or a straight surface. Therefore, as illustrated in Fig. 14b, when the red subpixel (SPg) is formed, the sealing layer (135) or the photosensitive film formed on the second side of the first protrusion (130-1) can be removed without forming a residual film.

[0322] As illustrated in FIG. 14d, after a red subpixel (SPr) is formed, a green subpixel (SPg) can be formed. To form the green subpixel (SPg), a second connection structure (172) formed on the second side of the first protrusion (130-1) is required. Therefore, when formation of the green subpixel (SPg) is required, the second connection structure (172) and the blocking structure can be immediately formed on the second side of the first protrusion (130-1) using the JIT process technology.

[0323] Thereafter, after a green organic light-emitting layer (122g), a cathode electrode (123g), an encapsulating layer (135), etc. are formed on the substrate (110), the encapsulating layer (135), the cathode electrode (123g), and the green organic light-emitting layer (122g) on ​​the remaining area except for the green subpixel (SPg) and the other side area of ​​the first protrusion (130-1) can be removed using a photosensitive pattern. The photosensitive pattern can be removed. Accordingly, a red organic light-emitting element (120r) can be formed in the red subpixel (SPr).

[0324] In summary, the JIT process technology may be a process technology that forms the connection structure (105A) and / or the blocking structure (105B) of the embodiment at the ‘necessary location’ at the ‘necessary time’.

[0325] As illustrated in FIG. 5d, when connection structures (105A) are formed in advance on both sides of the first protrusion (130-1) and both sides of the second protrusion (130-2), a residual film (230, 230a in FIG. 12d) may be generated on the connection structures (105A) on both sides of the first protrusion (130-1) during the process of forming a blue organic light-emitting element (120b) in the blue subpixel (SPb) as illustrated in FIGS. 5f to 5g. In addition, as illustrated in FIGS. 5j and 5j, a residual film (230, 230a) may be generated on the connection structures (105A) on one side of the first protrusion (130-1) during the process of forming a green organic light-emitting element (120g) in the green subpixel (SPg). The yield is reduced due to the occurrence of dark spots caused by these residual films (230, 230a), and additional dark spots may occur during the product use period, which may lower product reliability.

[0326] In FIGS. 5a to 5o, it is described that a blue organic light-emitting element (120b), a green organic light-emitting element (120g), and a red organic light-emitting element (120r) are formed in that order, but the order can be changed.

[0327] However, according to an embodiment, a connection structure (105A) may be formed on the side of the protrusion (130-1, 130-2) adjacent to the subpixel (SPr, SPg, SPb) using a JIT process technology at the time when the subpixel (SPr, SPg, SPb) is formed. In this case, since the connection structure (105A) is not formed on the side of the protrusion when another subpixel is formed, a residual film may not be generated on the side of the protrusion. Accordingly, the occurrence of dark spots due to the residual film (230, 230a) can be prevented in advance, thereby improving the yield and enhancing product reliability.

[0328] Specifically, at a time when formation of a red subpixel (SPr) is required, a first connection structure (171) is formed on the first side of the first protrusion (130-1) using a JIT process technology, and then the red subpixel (SPr) can be formed.

[0329] After the first connection structure (171) is formed and a red organic light-emitting element (120r) is formed in the red subpixel (SPr), it may now be time to form a green subpixel (SPg). At this point, a second connection structure (172) may be formed on the second side of the first protrusion (130-1) using a JIT process technology, and then the green subpixel (SPg) may be formed.

[0330] After the second connection structure (172) is formed and the green organic light-emitting element (120g) is formed in the green subpixel (SPg), it may now be time to form the blue subpixel (SPb). At this time, a third connection structure (173) may be formed on the second side of the second protrusion (130-2), i.e., the side adjacent to the blue subpixel (SPb), using the JIT process technology. After the third connection structure (173) is formed, a blue organic light-emitting element (120b) may be formed in the blue subpixel (SPb).

[0331] The entire process of forming a red subpixel (SPr), a green subpixel (SPg), and a blue subpixel (SPb) using the first JIT process technology will be described with reference to FIGS. 15A to 15K, 16A to 16J, and 17A to 17K. Although the blocking structure (105B) is not illustrated in FIGS. 15A to 15K, 16A to 16J, and 17A to 17K, the blocking structure (105B) may also be formed when the connection structure (105A) is formed using the first JIT process technology.

[0332] In the following description, shapes, structures, functions, processes, etc. that overlap with those described above are omitted.

[0333] Figures 15a to 15k illustrate detailed processes for forming red subpixels using the first JIT process technology.

[0334] As illustrated in FIG. 15a, anode electrodes (121r, 121g, 121b) may be formed on the red subpixel (SPr), the green subpixel (SPg), and the blue subpixel (SPb) of the substrate (110), respectively.

[0335] A first bank (111-1) and a first protrusion (130-1) may be formed on the substrate (110) between a red subpixel (SPr) and a green subpixel (SPg). A second bank (111-2) and a second protrusion (130-2) may be formed on the substrate (110) between a green subpixel (SPg) and a blue subpixel (SPb).

[0336] As shown in FIG. 15b, a photosensitive pattern (211) can be formed on the green subpixel (SPg), the other side area of ​​the first protrusion (130-1), the blue subpixel (SPb), and the second protrusion (130-2).

[0337] As illustrated in Fig. 15c, a first protrusion (130-1) may be etched using a photosensitive pattern (211) to form a first connection structure (171) on a first side of the first protrusion (130-1), i.e., a side adjacent to a red subpixel (SPr). The first connection structure (171) may have an undercut structure in which a side of the first layer (131) is recessed inward from a side of the second layer (132) or the third layer (133).

[0338] As shown in Fig. 15d, the photosensitive pattern (211) can be removed.

[0339] As shown in FIG. 15e, a red organic light-emitting layer (122r) can be deposited on the substrate (110).

[0340] As illustrated in FIG. 15f, a cathode electrode (123r) may be deposited on the red organic light-emitting layer (122r). The cathode electrode (123r) may be electrically connected to an auxiliary electrode, such as at least one of the first layer (131), the second layer (132), or the third layer (133), through a side of the first protrusion (130-1).

[0341] As shown in FIG. 15g, a sealing layer (135) can be deposited on the cathode electrode (123r).

[0342] As shown in FIG. 15h, a photosensitive pattern (212) can be formed on one side area of ​​the red subpixel (SPr) and the first protrusion (130-1).

[0343] As illustrated in FIG. 15i, the encapsulation layer (135) can be dry etched using the photosensitive pattern (212), so that the encapsulation layer (135) on the green subpixel (SPg), the other side area of ​​the first protrusion (130-1), the blue subpixel (SPb), and the second protrusion (130-2) can be removed.

[0344] As illustrated in FIG. 15j, the cathode electrode (123r) and the red organic light-emitting layer (122r) are dry-etched using the photosensitive pattern (212), so that the cathode electrode (123r) and the red organic light-emitting layer (122r) on the green subpixel (SPg), the other side area of ​​the first protrusion (130-1), the blue subpixel (SPb), and the second protrusion (130-2) can be removed.

[0345] As illustrated in FIG. 15k, the photosensitive pattern (212) can be removed. Accordingly, a red organic light-emitting element (120r) and an encapsulating layer (135) can be formed in the red subpixel (SPr).

[0346] Accordingly, while the red organic light-emitting element (120r) is formed, the connection structure (105A) may not be formed on the second side of the first protrusion (130-1), i.e., the side adjacent to the red subpixel (SPr). The second side of the first protrusion (130-1) may have a flat surface or a straight surface. Accordingly, the organic light-emitting layer, the cathode electrode (123r, 123g, 123b), and the sealing layer (135) formed on the second side of the first protrusion (130-1) can be easily removed without leaving a residual film.

[0347] Afterwards, an inspection is performed to determine whether the red subpixel (SPr) is complete, and a defect in the red subpixel (SPr) can be detected.

[0348] Figures 16a to 16j illustrate detailed processes for forming green subpixels using the first JIT process technology.

[0349] As illustrated in FIG. 16a, a photosensitive pattern (213) can be formed on a red subpixel (SPr), one side area of ​​the first protrusion (130-1), and the other side area of ​​the blue subpixel (SPb) and the second protrusion (130-2).

[0350] As illustrated in Fig. 16b, the first protrusion (130-1) may be etched using the photosensitive pattern (213) to form a second connection structure (172) on the second side of the first protrusion (130-1), i.e., the side adjacent to the green subpixel (SPg). The second connection structure (172) may have an undercut structure in which the side of the first layer (131) is recessed inward from the side of the second layer (132) or the third layer (133).

[0351] As shown in Fig. 16c, the photosensitive pattern (213) can be removed.

[0352] As shown in FIG. 16d, a green organic light-emitting layer (122g) can be deposited on the substrate (110).

[0353] As illustrated in FIG. 16e, a cathode electrode (123g) may be deposited on the green organic light-emitting layer (122g). The cathode electrode (123g) may be electrically connected to an auxiliary electrode, such as at least one of the first layer (131), the second layer (132), or the third layer (133), through a side of the first protrusion (130-1).

[0354] As shown in FIG. 16f, a sealing layer (135) can be deposited on the cathode electrode (123g).

[0355] As illustrated in FIG. 16g, a photosensitive pattern (214) can be formed on the other side area of ​​the green subpixel (SPg) and the first protrusion (130-1).

[0356] As illustrated in FIG. 16h, the encapsulation layer (135) can be dry etched using the photosensitive pattern (214), so that the encapsulation layer (135) on the red subpixel (SPr), one side area of ​​the first protrusion (130-1), the blue subpixel (SPb), and the second protrusion (130-2) can be removed.

[0357] As illustrated in FIG. 16i, the cathode electrode (123g) and the green organic light-emitting layer (122g) are dry-etched using the photosensitive pattern (214), so that the cathode electrode (123g) and the green organic light-emitting layer (122g) on ​​the red subpixel (SPr), one side area of ​​the first protrusion (130-1), the blue subpixel (SPb), and the second protrusion (130-2) can be removed.

[0358] As illustrated in FIG. 16j, the photosensitive pattern (214) can be removed. Accordingly, a green organic light-emitting element (120g) and an encapsulating layer (135) can be formed in the green subpixel (SPg).

[0359] Accordingly, while the green organic light-emitting element (120g) is formed, the connection structure (105A) may not be formed on the second side of the second protrusion (130-2), i.e., the side adjacent to the blue subpixel (SPb). The second side of the second protrusion (130-2) may have a flat surface or a straight surface. Accordingly, the organic light-emitting layer, the cathode electrode (123g), and the sealing layer (135) formed on the second side of the second protrusion (130-2) can be easily removed without leaving a residual film.

[0360] In the drawing, the area of ​​the red organic light-emitting layer (122r) on the upper side of the first protrusion (130-1) is depicted as being larger than the area of ​​the green organic light-emitting layer (122g), but they may have the same area.

[0361] Afterwards, an inspection is performed to determine whether the green subpixel (SPg) is complete, and a defect in the green subpixel (SPg) can be detected.

[0362] FIGS. 17A to 17K illustrate detailed processes for forming blue subpixels using the first JIT process technology.

[0363] As shown in Fig. 17a, a substrate (110) on which red subpixels (SPr) and green subpixels (SPg) are formed can be provided.

[0364] As shown in FIG. 17b, a photosensitive pattern (215) can be formed on one side area of ​​the red subpixel (SPr), the first protrusion (130-1), the green subpixel (SPg), and the second protrusion (130-2).

[0365] As illustrated in Fig. 17c, a second protrusion (130-2) may be etched using a photosensitive pattern (215) to form a third connection structure (173) on the second side of the second protrusion (130-2), i.e., the side adjacent to the blue subpixel (SPb). The third connection structure (173) may have an undercut structure in which the side of the first layer (131) is recessed inward from the side of the second layer (132) or the third layer (133).

[0366] As shown in FIG. 17d, the photosensitive pattern (215) can be removed.

[0367] As shown in FIG. 17e, a blue organic light-emitting layer (122b) can be deposited on the substrate (110).

[0368] As illustrated in FIG. 17f, a cathode electrode (123b) may be deposited on the blue organic light-emitting layer (122b). The cathode electrode (123b) may be electrically connected to an auxiliary electrode, such as at least one of the first layer (131), the second layer (132), or the third layer (133), through a side of the second protrusion (130-2).

[0369] As shown in FIG. 17g, a sealing layer (135) can be deposited on the cathode electrode (123b).

[0370] As shown in FIG. 17h, a photosensitive pattern (216) can be formed on the other side area of ​​the blue subpixel (SPb) and the second protrusion (130-2).

[0371] As illustrated in FIG. 17i, the encapsulation layer (135) can be dry etched using a photosensitive pattern (216), so that the encapsulation layer (135) on one side area of ​​the red subpixel (SPr), the first protrusion (130-1), the green subpixel (SPg), and the second protrusion (130-2) can be removed.

[0372] As illustrated in FIG. 17j, the cathode electrode (123b) and the blue organic light-emitting layer (122b) can be dry-etched using the photosensitive pattern (216), so that the cathode electrode (123b) and the blue organic light-emitting layer (122b) on one side area of ​​the red subpixel (SPr), the first protrusion (130-1), the green subpixel (SPg), and the second protrusion (130-2) can be removed.

[0373] As illustrated in FIG. 17k, the photosensitive pattern (216) can be removed. Accordingly, a blue organic light-emitting element (120b) and an encapsulating layer (135) can be formed in the blue subpixel (SPb).

[0374] In the drawing, the area of ​​the green organic light-emitting layer (122g) on ​​the upper side of the first protrusion (130-1) is depicted as being larger than the area of ​​the blue organic light-emitting layer (122b), but they may have the same area.

[0375] Afterwards, an inspection is performed to determine whether the blue subpixel (SPb) is complete, and a defect in the blue subpixel (SPb) can be detected.

[0376] As illustrated in FIGS. 15A to 15K, 16A to 16J, and 17A to 17K, in a substrate structure using the first JIT process, a first bank (111-1) and a first protrusion (130-1) are formed, and a first connection structure (171) can be formed on a side adjacent to a red subpixel (SPr) in the first protrusion (130-1) before a red organic light-emitting element (120r) is formed.

[0377] In contrast, as illustrated in FIG. 18, in a substrate structure using the second JIT process technology, the first bank (111-1) and the first connection structure (171) may be formed before the red organic light-emitting element (120r) is formed. In addition, as illustrated in FIG. 23, in a substrate structure using the third JIT process technology, the first bank (111-1) may be formed, and the first connection structure (171) may be formed before the red organic light-emitting element (120r) is formed.

[0378] Although a blocking structure (105B) formed using a blocking layer (113) is illustrated in FIG. 18 and FIG. 23, the blocking structure (105B) may be omitted.

[0379] Below, the manufacturing process using the second JIT process technology and the third JIT process technology is described in more detail.

[0380] Figure 18 illustrates the substrate structure immediately before performing the second JIT process technology. While the drawing illustrates a red subpixel (SPr), the same can be applied to the green subpixel (SPg) and blue subpixel (SPb).

[0381] As shown in Fig. 18, an inorganic film (111a), a third layer (133), a first layer (131), and a second layer (132) can be formed on a substrate (110).

[0382] Thereafter, at the point when the red subpixel (SPr) is to be formed, the third layer (133), the first layer (131), and the second layer (132) may be etched using the second JIT process technology to form the first connection structure (171), and the inorganic film (111a) and the blocking layer (113) may be etched to form the first bank (111-1) and the blocking structure (105B). At this time, the inorganic film (111a) may be etched until the anode electrodes (121r, 121g, 121b) are exposed to the red subpixel (SPr).

[0383] Thereafter, a red organic light-emitting layer (122r), a cathode electrode (123r, 123g, 123b), an encapsulating layer (135), etc. are deposited and patterned, so that a red organic light-emitting element (120r) and an encapsulating layer (135) can be formed in a red subpixel (SPr).

[0384] Figure 19 illustrates a first process for forming a connection structure using a second JIT process technology prior to forming a green organic light-emitting element. While the drawing illustrates a green subpixel (SPg), the same process can be applied to a red subpixel (SPr) and a blue subpixel (SPb).

[0385] In step R10, a red organic light-emitting element (120r) may be formed in a red subpixel (SPr) of a substrate (110) (see FIG. 18). At this time, an anode electrode (121r, 121g, 121b), an inorganic film (111a), a third layer (133), a first layer (131), and a second layer (132) may be formed on a green subpixel (SPg) of the substrate (110). The etching rate of the first layer (131) may be greater than the etching rates of the second layer (132) or the third layer (133).

[0386] In step G01, a photosensitive pattern (221) can be formed on the remaining area of ​​the substrate (110) excluding the green subpixel (SPg).

[0387] In step G02a, the second layer (132) can be dry etched using the photosensitive pattern (221) so that the second layer (132) in the green subpixel (SPg) can be removed.

[0388] In step G02b, the first layer (131) and the third layer (133) may be wet-etched simultaneously using the photosensitive pattern (221), so that the first layer (131) and the third layer (133) in the green subpixel (SPg) may be removed. In this case, the first layer (131) may be etched faster than the third layer (133), so that a first protrusion (130-1) having a second connecting structure (172) in which the side of the first layer (131) is recessed inward from the side of the second layer (132) or the third layer (133) may be formed. In the drawing, the side of the third layer (133) has a shape in which the side is recessed further inward than the side of the second layer (132), but this is not limited thereto.

[0389] In step G02c, the inorganic film (111a) may be dry-etched in a self-aligning manner using the photosensitive pattern (221), thereby forming a first bank (111-1). Through this self-aligning dry-etching, the end of the first bank (111-1) may be vertically aligned with the end of the photosensitive pattern (221) or the second layer (132).

[0390] In step G03, the photosensitive pattern (221) can be removed.

[0391] Afterwards, a green organic light-emitting element can be formed in the green subpixel (SPg).

[0392] Figure 20 illustrates a second process for forming a connection structure using a second JIT process technology prior to forming a green organic light-emitting element. While the drawing illustrates a green subpixel (SPg), the same process can be applied to a red subpixel (SPr) and a blue subpixel (SPb).

[0393] Steps R10, G01 and G02a are identical to steps R10, G01 and G02a illustrated in Fig. 19, and therefore detailed descriptions are omitted.

[0394] In step G02b, the first layer (131), the third layer (133), and the inorganic film (111a) may be dry-etched in a self-aligning manner using a photosensitive pattern (221), so that the first protrusion (130-1) and the first bank (111-1) may be formed. Due to the dry-etching in a self-aligning manner, the side of the first layer (131) may be positioned on the same vertical line or diagonal line as the side of the second layer (132) and / or the side of the third layer (133).

[0395] In step G02c, the first layer (131) and the third layer (133) can be wet-etched simultaneously using the photosensitive pattern (221). Accordingly, the first layer (131) can be etched faster than the third layer (133), so that a first protrusion (130-1) having a second connecting structure (172) in which a side of the first layer (131) is recessed inward from a side of the second layer (132) or the third layer (133) can be formed.

[0396] In step G03, the photosensitive pattern can be removed.

[0397] Afterwards, a green organic light-emitting element can be formed in the green subpixel (SPg).

[0398] The entire process of forming a red subpixel (SPr), a green subpixel (SPg), and a blue subpixel (SPb) using the second JIT process technology will be described with reference to FIGS. 21A to 21K and 22A to 22M. Although a blocking structure is not illustrated in FIGS. 21A to 21K and 22A to 22M, a blocking structure may be provided.

[0399] In the following description, shapes, structures, functions, processes, etc. that overlap with those described above are omitted.

[0400] FIGS. 21a to 21k illustrate detailed processes for forming red subpixels using the second JIT process technology.

[0401] As illustrated in FIG. 21a, an inorganic film (111a), a third layer (133), a first layer (131), and a second layer (132) can be formed on a substrate (110) including a red subpixel (SPr), a green subpixel (SPg), and a blue subpixel (SPb).

[0402] As illustrated in FIG. 21b, a photosensitive pattern (231) may be formed on the remaining area of ​​the substrate (110) excluding the red subpixel (SPr). The photosensitive pattern (231) may be formed on the green subpixel (SPg) and the blue subpixel (SPb) of the substrate (110). The photosensitive pattern (231) may also be formed on the area between the red subpixel (SPr) and the green subpixel (SPg) and the area between the green subpixel (SPg) and the blue subpixel (SPb) in the substrate (110).

[0403] As shown in Fig. 21c, the second layer (132) can be dry etched using a photosensitive pattern (231).

[0404] As illustrated in Fig. 21d, the first layer (131) and the third layer (133) may be wet-etched in batches using a photosensitive pattern (231), thereby forming a first connection structure (171) in an area in contact with the red subpixel (SPr). The first connection structure (171) may have an undercut structure or a U-cavity.

[0405] As shown in Fig. 21e, the inorganic film (111a) can be dry etched using a photosensitive pattern (231) to expose the anode electrode (121r) to the red subpixel (SPr).

[0406] As shown in FIG. 21f, the photosensitive pattern (231) can be removed.

[0407] As shown in FIG. 21g, a red organic light-emitting layer (122r) and a cathode electrode (123r) can be deposited on a substrate (110).

[0408] As illustrated in FIG. 21h, a sealing layer (135) may be deposited on the cathode electrode (123r). The sealing layer (135) may include, but is not limited to, a first-first insulating layer including an inorganic material such as SiO2 and a first-second insulating layer including an inorganic material such as SiNx.

[0409] As illustrated in FIG. 21i, a photosensitive pattern (232) may be formed on a red subpixel (SPr) of a substrate (110). The photosensitive pattern (232) may also be formed on a portion of the substrate (110) between the red subpixel (SPr) and the green subpixel (SPg) and a portion of the substrate (110) between the green subpixel (SPg) and the blue subpixel (SPb).

[0410] As illustrated in FIG. 21j, the encapsulation layer (135), the cathode electrode (123r), and the red organic light-emitting layer (122r) can be dry-etched using the photosensitive pattern (232), so that the encapsulation layer (135), the cathode electrode (123r), and the red organic light-emitting layer (122r) in the green subpixel (SPg) and the blue subpixel (SPb) can be removed. Accordingly, an opening (261) exposing the second layer (132) in the green subpixel (SPg) and the blue subpixel (SPb) can be formed. The encapsulation layer (135), the cathode electrode (123r), and the red organic light-emitting layer (122r) on another area of ​​the substrate (110) between the red subpixel (SPr) and the green subpixel (SPg) and on some area of ​​the substrate (110) between the green subpixel (SPg) and the blue subpixel (SPb) can be removed.

[0411] As illustrated in FIG. 21k, by removing the photosensitive pattern (232), a red subpixel (SPr) including a red organic light-emitting element (120r) can be formed.

[0412] Thereafter, a green subpixel (SPg) and a blue subpixel (SPb) can be formed using the second JIT process technology as illustrated in FIGS. 22a to 22m.

[0413] Figures 22a to 22m illustrate detailed processes for forming green subpixels and blue subpixels using the second JIT process technology.

[0414] As illustrated in FIG. 22a, a photosensitive pattern (233) may be formed on the remaining area of ​​the substrate (110) excluding the green subpixel (SPg). The photosensitive pattern (233) may be formed on the red subpixel (SPr) and the blue subpixel (SPb) of the substrate (110). The photosensitive pattern (233) may also be formed on the area between the red subpixel (SPr) and the green subpixel (SPg) and the area between the green subpixel (SPg) and the blue subpixel (SPb) of the substrate (110).

[0415] As shown in Fig. 22b, the second layer (132) can be dry etched using a photosensitive pattern (233).

[0416] As illustrated in FIG. 22c, the first layer (131) and the third layer (133) can be wet-etched in batches using a photosensitive pattern (233). Accordingly, a second connection structure (172) can be formed in which a side of the first layer (131) is recessed inward from a side of the second layer (132). A first protrusion (130-1) having a first connection structure (171) and a second connection structure (172) can be formed between a red subpixel (SPr) and a green subpixel (SPg).

[0417] As illustrated in FIG. 22d, the inorganic film (111a) may be dry-etched using a photosensitive pattern (233). Accordingly, a first bank (111-1) may be formed between the red subpixel (SPr) and the green subpixel (SPg). In this case, the first protrusion (130-1) may be formed on the upper side of the first bank (111-1).

[0418] Accordingly, an opening (262) can be formed in which the anode electrode (121g) is exposed to the green subpixel (SPg).

[0419] Meanwhile, since the third layer (133) is not etched by the CF4 and He gases used for dry etching of the inorganic film (111a), the area from which the inorganic film (111a) is removed may be the same as the area of ​​the removed third layer (133). That is, the side of the third layer (133) and the side of the first bank (111-1) may be positioned on the same vertical line or diagonal line. Accordingly, the width of the first bank (111-1) may become narrower, and in inverse proportion, the aperture area of ​​the green subpixel (SPg) may become larger.

[0420] As illustrated in FIG. 22e, the photosensitive pattern (233) may be removed. In this case, the photosensitive pattern (233) formed on the first connection structure (171) may not be removed and may remain as a residual film (241).

[0421] As illustrated in FIG. 22f, a green subpixel (SPg) including a green organic light-emitting element (120g) can be formed. The process for forming the green organic light-emitting element (120g) is the same as the process for forming the red organic light-emitting element (120r) described above (FIGS. 22g to 22k), and therefore, a detailed description thereof will be omitted.

[0422] Meanwhile, after the green subpixel (SPg) is formed, a photosensitive pattern (234) may be formed on the remaining area of ​​the substrate (110) excluding the blue subpixel (SPb). The photosensitive pattern (234) may be formed on the red subpixel (SPr) and the green subpixel (SPg) of the substrate (110). The photosensitive pattern (234) may also be formed on the area between the red subpixel (SPr) and the green subpixel (SPg) and the area between the green subpixel (SPg) and the blue subpixel (SPb) in the substrate (110).

[0423] As illustrated in FIG. 22g, the second layer (132) can be dry etched using a photosensitive pattern (234).

[0424] As illustrated in FIG. 22h, the first layer (131) and the third layer (133) can be wet-etched simultaneously using a photosensitive pattern (234). Accordingly, a third connection structure (173) can be formed in which a side of the first layer (131) is recessed inward from a side of the second layer (132). A second protrusion (130-2) having a second connection structure (172) and a third connection structure (173) can be formed between a green subpixel (SPg) and a blue subpixel (SPb).

[0425] As illustrated in FIG. 22i, the inorganic film (111a) may be dry-etched using a photosensitive pattern (234). Accordingly, a second bank (111-2) may be formed between the green subpixel (SPg) and the blue subpixel (SPb). In this case, the second protrusion (130-2) may be formed on the upper side of the second bank (111-2).

[0426] Accordingly, an opening (263) can be formed in which the anode electrode (121b) is exposed to the blue subpixel (SPb).

[0427] Meanwhile, since the third layer (133) is not etched by the CF4 and He gases used for dry etching of the inorganic film (111a), the area from which the inorganic film (111a) is removed may be the same as the area of ​​the removed third layer (133). That is, the side of the third layer (133) and the side of the second bank (111-2) may be positioned on the same vertical line or diagonal line. Accordingly, the width of the second bank (111-2) may become narrower, and in inverse proportion to this, the aperture area of ​​the blue subpixel (SPb) may become larger.

[0428] As illustrated in FIG. 22j, the photosensitive pattern (234) may be removed. In this case, the photosensitive pattern (234) formed on the second connecting structure (172) may not be removed and may remain as a residual film (242).

[0429] As illustrated in FIG. 22k, a blue subpixel (SPb) including a blue organic light-emitting element (120b) can be formed. The process of forming the blue organic light-emitting element (120b) is the same as the process of forming the red organic light-emitting element (120r) described above (FIGS. 22g to 22k), and therefore, a detailed description thereof will be omitted.

[0430] When the photosensitive pattern (not shown) is removed after the blue organic light-emitting element (120b) is formed in the blue subpixel (SPb), the photosensitive pattern formed in the third connection structure (173) may not be removed and may remain as a residual film (243).

[0431] As illustrated in FIGS. 22l and 22m, a plurality of sealing layers (143, 144) may be formed on the substrate (110). The sealing layers (143, 144) may include an organic or inorganic material having excellent insulation properties and moisture penetration blocking properties.

[0432] The sealing layer (143) may be formed through an inkjet process, and the sealing layer (144) may be formed through a PECVD process, but is not limited thereto.

[0433] An organic light-emitting display device can be manufactured through a series of processes like this.

[0434] In the above, it is described that the red subpixel (SPr), green subpixel (SPg), and blue subpixel (SPb) are formed in that order, but the order can be changed.

[0435] Figure 23 illustrates the substrate structure immediately prior to performing the third JIT process technology. While the drawing illustrates a red subpixel (SPr), the same can be applied to the green subpixel (SPg) and blue subpixel (SPb).

[0436] As illustrated in Fig. 23, a first bank (111-1) may be formed on a substrate (110). A third layer (133), a first layer (131), and a second layer (132) may be formed on the first bank (111-1).

[0437] Thereafter, at a time when a red subpixel (SPr) is to be formed, a third layer (133), a first layer (131), and a second layer (132) may be etched using a third JIT process technology to form a first connection structure (171). By etching the third layer (133), the first layer (131), and the second layer (132), the anode electrodes (121r, 121g, 121b) in the red subpixel (SPr) may be exposed.

[0438] Using the third JIT process technology, the barrier layer (113) can be etched to form a barrier structure (105B).

[0439] Thereafter, a red organic light-emitting layer (122r), a cathode electrode (123r), an encapsulating layer (135), etc. are deposited and patterned, so that a red organic light-emitting element (120r) and an encapsulating layer (135) can be formed in a red subpixel (SPr).

[0440] Figure 24 illustrates a process for forming a connection structure prior to forming a green organic light-emitting element using a third JIT process technology. While the drawing illustrates a green subpixel (SPg), the same process can be applied to a red subpixel (SPr) and a blue subpixel (SPb).

[0441] In step R10, a red organic light-emitting element (120r) may be formed on a red subpixel (SPr) of a substrate (110) (see FIG. 23). At this time, an anode electrode (121r, 121g, 121b), a third layer (133), a first layer (131), and a second layer (132) may be formed on a green subpixel (SPg) on ​​the substrate (110). The etching rate of the first layer (131) may be greater than the etching rate of the second layer (132) or the third layer (133). In addition, a first bank (111-1) may be formed between the red subpixel (SPr) and the green subpixel (SPg).

[0442] In step G01, a photosensitive pattern (241) can be formed on the remaining area of ​​the substrate (110) excluding the green subpixel (SPg).

[0443] In step G02a, the second layer (132) can be dry etched using the photosensitive pattern (241) so that the second layer (132) in the green subpixel (SPg) can be removed.

[0444] In step G02b, the first layer (131) and the third layer (133) may be wet-etched simultaneously using the photosensitive pattern (241), so that the first layer (131) and the third layer (133) in the green subpixel (SPg) may be removed. In this case, the first layer (131) may be etched faster than the third layer (133), so that a first protrusion (130-1) having a second connection structure (172) in which the side of the first layer (131) is recessed inward from the side of the second layer (132) or the third layer (133) may be formed. In the drawing, the side of the third layer (133) has a shape in which the side is recessed further inward than the side of the second layer (132), but this is not limited thereto.

[0445] In step G03, the photosensitive pattern (241) can be removed.

[0446] Afterwards, a green organic light-emitting element can be formed in the green subpixel (SPg).

[0447] Figure 25 illustrates an organic light-emitting display device manufactured using the third JIT process technology.

[0448] As illustrated in FIG. 25, the width (W2) of the aperture area in the organic light-emitting display device manufactured using the third JIT process technology may be smaller than the width (W1) of the aperture area in the organic light-emitting display device manufactured using the second JIT process technology (FIG. 22m).

[0449] As described above, when using the second JIT process technology, the number area (W1) of green subpixels (SPg) or blue subpixels (SPb) may increase as the width of the first bank (111-1) or the second bank (111-2) formed by removing the inorganic film (111a) decreases.

[0450] From this, it can be seen that the second JIT process technology is more advantageous than the third JIT process technology in expanding the width of the aperture area.

Claims

1. A step of forming an anode electrode on each of the red subpixel, green subpixel, and blue subpixel on the substrate; A step of forming a first bank between the red subpixel and the green subpixel and a second bank between the green subpixel and the blue subpixel; A step of forming a first protrusion and a second protrusion on the first bank and the second bank, respectively; A step of forming a first connection structure on a first side of the first protrusion adjacent to the red subpixel, and forming a first organic light-emitting element in the red subpixel using a first photolithography process; A step of forming a second connection structure on the second side of the first protrusion adjacent to the green subpixel and the first side of the second protrusion, and forming a second organic light-emitting element in the green subpixel using a second photolithography process; and A step of forming a third connection structure on a second side of the second protrusion adjacent to the blue subpixel, and forming a third organic light-emitting element in the blue subpixel using a third photolithography process; The first organic light-emitting element to the third organic light-emitting element each include an organic light-emitting layer including the anode electrode, a hole injection layer, and a cathode electrode, The first connection structure to the third connection structure each include an auxiliary electrode electrically connected to the cathode electrode in contact with the end of the hole injection layer, The step of forming the first bank and the second bank is: A step of forming a blocking structure for disconnecting the hole injection layer in each of the first bank and the second bank, A method for manufacturing an organic light-emitting display device.

2. In paragraph 1, The step of forming the above blocking structure is: A step of forming a blocking layer that extends inward from the first side and the second side of the first bank and the first side and the second side of the second bank, respectively, A method for manufacturing an organic light-emitting display device.

3. In paragraph 1, The step of forming the first organic light-emitting element comprises: A step of depositing and patterning a first organic light-emitting layer including a first hole injection layer and a first cathode electrode on the substrate, thereby forming the first organic light-emitting layer and the first cathode electrode on the red subpixel and the first bank, wherein the first cathode electrode is in contact with an end of the first hole injection layer and an auxiliary electrode of the first connection structure; A method for manufacturing an organic light-emitting display device.

4. In paragraph 3, The first organic light-emitting layer is disconnected corresponding to the first blocking structure formed on the first side of the first bank. A method for manufacturing an organic light-emitting display device.

5. In paragraph 3, The step of forming the second organic light-emitting element is: A step of depositing and patterning a second organic light-emitting layer including a second hole injection layer and a second cathode electrode on the substrate, thereby forming the second organic light-emitting layer and the second cathode electrode on the green subpixel, the first bank, and the second bank, wherein the second cathode electrode is in contact with an end of the second hole injection layer and an auxiliary electrode of the second connection structure; A method for manufacturing an organic light-emitting display device.

6. In paragraph 5, The second organic light-emitting layer is disconnected corresponding to the second blocking structure formed on the second side of the first bank and the first side of the second bank. A method for manufacturing an organic light-emitting display device.

7. In paragraph 5, The step of forming the third organic light-emitting element is: A step of depositing and patterning a third organic light-emitting layer including a third hole injection layer and a third cathode electrode on the substrate, thereby forming the third organic light-emitting layer and the third cathode electrode on the blue subpixel and the second bank, wherein the third cathode electrode is in contact with an end of the third hole injection layer and an auxiliary electrode of the third connection structure; A method for manufacturing an organic light-emitting display device.

8. In paragraph 7, The third organic light-emitting layer is disconnected corresponding to the third blocking structure formed on the second side of the second bank. A method for manufacturing an organic light-emitting display device.

9. In paragraph 1, The step of forming the above cathode electrode is: A step of forming a first conductive layer for electrically connecting to the auxiliary electrode; The first conductive layer comprises a Mg:Ag alloy, A method for manufacturing an organic light-emitting display device.

10. In paragraph 1, The step of forming the above cathode electrode is: Step of forming the first challenge layer; A step of forming a second conductive layer on the first conductive layer to electrically connect to the auxiliary electrode; The first conductive layer comprises a Mg:Ag alloy, The second conductive layer comprises a transparent conductive oxide material, A method for manufacturing an organic light-emitting display device.

11. In paragraph 1, A step of forming a first color filter layer to a third color filter layer on the first organic light-emitting element to the third organic light-emitting element; further comprising; A method for manufacturing an organic light-emitting display device.

12. In paragraph 1, Further comprising a step of forming a sealing layer on the first organic light-emitting element, the second organic light-emitting element, and the third organic light-emitting element; A method for manufacturing an organic light-emitting display device.

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