Light emission device, display device, and method for producing light emission device

Abstract

A light emission device (101) comprises: a bank layer (1) which has an opening (6); a first electrode (2) which overlaps with the opening (6) in a plan view; a first interposing layer (3) which has a first edge (7) overlapping with the opening (6) in a plan view; a light emission layer (4) which is positioned above the first interposing layer (3); and a second electrode (5) which is positioned above the light emission layer (4).

Description

Light-emitting device, display device, and method for manufacturing light-emitting device

[0001] The present disclosure relates to a light-emitting device, a display device, and a method for manufacturing a light-emitting device.

[0002] Patent Document 1 discloses a display device having a laminated structure of a plurality of layers including an organic light-emitting layer.

[0003] U.S. Patent Publication No. 2010 / 0133993

[0004] In the technology disclosed in Patent Document 1, unintended cracks occur in the light-emitting region of the organic light-emitting layer and / or directly above it, and these cracks may result in low-quality light emission and low manufacturing yields.

[0005] A light-emitting device according to one embodiment of the present disclosure comprises a bank layer having an opening, a first electrode overlapping the opening in a planar view, a first intermediate layer including a first edge overlapping the opening in a planar view, a light-emitting layer located above the first intermediate layer, and a second electrode located above the light-emitting layer.

[0006] According to one aspect of the present disclosure, a light emitting device capable of emitting high-quality light can be realized with a high manufacturing yield.

[0007] FIG. 1 is a cross-sectional view illustrating an opening. FIG. 1 is a cross-sectional view illustrating a schematic configuration of a light-emitting device according to a first embodiment of the present disclosure. FIG. 2 is a cross-sectional view illustrating a first edge and its periphery according to an embodiment of the present disclosure. FIG. 3 is a cross-sectional view illustrating a first edge and its periphery. FIG. 4 is a plan view illustrating a schematic configuration of a light-emitting device according to a first embodiment of the present disclosure. FIG. 5 is a flowchart for describing a method for manufacturing a light-emitting device according to a first embodiment of the present disclosure. FIG. 6 is a cross-sectional view illustrating a schematic configuration of a light-emitting device according to a second embodiment of the present disclosure. FIG. 7 is a cross-sectional view illustrating a schematic configuration of a light-emitting device according to a third embodiment of the present disclosure. FIG. 8 is a block diagram illustrating a schematic configuration of a display device according to a fourth embodiment of the present disclosure. FIG. 9 is another cross-sectional view of a first edge and its periphery according to an embodiment of the present disclosure. FIG. 10 is yet another cross-sectional view of a first edge and its periphery according to an embodiment of the present disclosure.

[0008] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The following describes an embodiment of the present disclosure. For convenience of explanation, the same reference numerals are used to designate components having the same functions as those previously described, and the description thereof may not be repeated.

[0009] [Embodiment 1] Fig. 1A is a cross-sectional view illustrating an opening 6. Fig. 1B is a cross-sectional view showing a schematic configuration of a light-emitting device 101 according to embodiment 1 of the present disclosure. Fig. 2 is a cross-sectional view of a first edge 7 and its periphery according to an embodiment of the present disclosure. Fig. 3 is a cross-sectional view of the first edge 7 and its periphery. Fig. 4 is a plan view showing a schematic configuration of the light-emitting device 101.

[0010] The light-emitting device 101 includes a bank layer 1, a first electrode 2, a first intermediate layer 3, a light-emitting layer 4, and a second electrode 5. The bank layer 1 has an opening 6 therein. The first electrode 2 overlaps the opening 6 in a planar view of the light-emitting device 101. The first intermediate layer 3 includes a first edge 7 that overlaps the opening 6 in a planar view of the light-emitting device 101. The light-emitting layer 4 is located above the first intermediate layer 3. The second electrode 5 is located above the light-emitting layer 4. The opening 6 may be defined by a straight line connecting the top ends of the bank layer 1 in a cross section of the subpixel SP, the cross section being based on the surface of the circuit board 105. The opening 6 may be defined such that the edge of the opening 6 includes the top end of the bank layer 1. The stack SB is a diagram illustrating all layers from the first electrode 2 to the second electrode 5 collectively. The stack SB may not include the first electrode 2.

[0011] Examples of the light-emitting layer 4 include an OLED (organic light-emitting diode) layer and a QLED (quantum dot light-emitting diode) layer.

[0012] In the light-emitting device 101, the corner portion 13 applies force to the layers above the first intermediate layer 3, but in exchange, it is possible to suppress the occurrence of unintended stress in the light-emitting region 8 of the light-emitting layer 4 and / or the portions immediately above it. The light-emitting device 101 can suppress the occurrence of unintended cracks in the light-emitting region 8 of the light-emitting layer 4 and / or the portions immediately above it. According to the present disclosure, it is possible to realize a light-emitting device 101 capable of high-quality light emission with a high manufacturing yield. The first edge 7 is located on the light-emitting region 8 side of the first intermediate layer 3.

[0013] The first edge 7 may be in contact with the upper surface of the first electrode 2. The first intermediate layer 3 may have a larger Young's modulus than the bank layer 1.

[0014] The light-emitting device 101 may include a first charge functional layer 9 in contact with the top surface of the first intermediate layer 3. The first charge functional layer 9 may be a charge injection layer. The light-emitting device 101 may include a charge transport layer 10 located above the first charge functional layer 9.

[0015] The first intermediate layer 3 may have a first end surface 11 including a first edge 7. In a planar view of the light-emitting device 101, the first edge 7 may overlap the first electrode 2, the light-emitting layer 4, and the second electrode 5. The first intermediate layer 3 may not overlap the center of the opening 6 in a planar view of the light-emitting device 101. The first end surface 11 may be a forward tapered surface. The upper surface of the first intermediate layer 3 and the first end surface 11 may form a corner portion 13. The corner portion 13 may have a shape that forms an angle greater than 90°. The corner portion 13 may have a shape with a radius of curvature of 200 nm or less, or may have a radius of curvature of 150 nm or less. The first edge 7 may be an end portion having an interface between the first end surface 11 and the lower surface of the first intermediate layer 3.

[0016] The corner portion 13 may be the portion where, when proceeding from the first edge 7 along the interface of the upper surface of the first intermediate layer 3, the tangent to the interface of the first intermediate layer 3 first becomes parallel to the substrate surface or the portion where the radius of curvature first becomes 200 nm or less. The corner portion 13 may be the portion where the thickness of the first intermediate layer 3 is greatest, and may be formed into a convex shape that protrudes upward, for example, as shown in FIG. 3 . The convex shape may be defined as a portion having an inflection point where the slope of the tangent to the interface of the first intermediate layer 3 changes from concave to convex, or vice versa. The corner portion 13 is preferably formed within 200 nm from the first edge 7 in the planar direction toward the first intermediate layer 3. In this case, the light-emitting region can be made wider.

[0017] At least one of the first charge functional layer 9, the light-emitting layer 4, and the second electrode 5 may include a crack 14 that overlaps with the first intermediate layer 3 in a plan view of the light-emitting device 101. In the light-emitting device 101, in exchange for including the crack 14, it is possible to suppress the occurrence of unintended stress in the light-emitting region 8 of the light-emitting layer 4 and / or in each portion immediately above it.

[0018] The first intermediate layer 3 has a first end surface 11 including a first edge 7, and at least one of the first charge functional layer 9, the light-emitting layer 4, and the second electrode 5 may have a first portion 15 that overlaps with the upper side of the corner portion 13 in a plan view of the light-emitting device 101, which is thinner than a second portion 16 that overlaps with the center of the opening 6 in a plan view of the light-emitting device 101. At least one of the first charge functional layer 9, the light-emitting layer 4, and the second electrode 5 in the first portion 15 may be thinner than the second portion 16. The first electrode 2 may include a flat portion 17 that overlaps with the opening 6 in a plan view of the light-emitting device 101, and the first edge 7 may be located on the flat portion 17. The flat portion 17 may be a portion that does not include the bank side surface (inclined portion 19) of the opening 6.

[0019] The bank layer 1 has a bank surface 18, and the first electrode 2 may include an inclined portion 19 along the bank surface 18. The bank surface 18 may be a forward tapered surface. A third portion 20, which is a part of the first intermediate layer 3, may be in contact with the inclined portion 19.

[0020] In a plan view of the light-emitting device 101, the first edge 7 may be located between the light-emitting region 8 of the light-emitting layer 4 and the bank layer 1. In a plan view of the light-emitting device 101, the light-emitting region 8 may be a region where the first electrode 2 is formed and the bank layer 1 and the first intermediate layer 3 are not formed.

[0021] The first intermediate layer 3 may have a larger Young's modulus than the first charge functional layer 9. The first intermediate layer 3 may be an insulating layer.

[0022] The light-emitting device 101 has a second intervening layer 22 including a second edge 21 that overlaps with the opening 6 when viewed in a plane of the light-emitting device 101, and the second edge 21 intersects with the upper surface of the first electrode 2 and does not have to overlap with the center of the opening 6 when viewed in a plane of the light-emitting device 101.

[0023] The light emitting device 101 may include a second charge functional layer 23 located above the light emitting layer 4, and the first edge 7 may overlap the second charge functional layer 23 in a plan view of the light emitting device 101.

[0024] The bank layer 1 may be an organic layer, and the first intermediate layer 3 may be an inorganic layer. ２ , SiN, Al ２ O ３ , and ZrO ２ The first intermediate layer 3 may have a Young's modulus of 100 GPa or more. The first intermediate layer 3 may have a fourth portion 24 that is in contact with the flat portion 17 and has a thickness of 40 nm or more. The distance 25 between the first edge 7 and the bank layer 1 may be 3 μm or less.

[0025] The first electrode 2 may be an anode, and the second electrode 5 may be a cathode. The light-emitting layer 4 may include a plurality of quantum dots that emit visible light. The light-emitting layer 4 may also include an inorganic matrix that fills spaces between the plurality of quantum dots.

[0026] 5 is a flowchart illustrating a method for manufacturing the light-emitting device 101. The method for manufacturing the light-emitting device 101 includes steps S1 to S5. Step S1 is a step of forming a bank layer 1 having an opening 6. Step S2 is a step of forming a first electrode 2 that overlaps with the opening 6 in a planar view. Step S3 is a step of forming a first intermediate layer 3 that includes a first edge 7 that overlaps with the opening 6 in a planar view and that is in contact with the first electrode 2. Step S4 is a step of forming a light-emitting layer 4 that is located above the first intermediate layer 3. Step S5 is a step of forming a second electrode 5 that is located above the light-emitting layer 4.

[0027] For example, in step S3, the first intermediate layer 3 may be formed by dry etching using a photoresist. In the dry etching, the selectivity between the first intermediate layer 3 and the photoresist may be set to 0.5 to 50.

[0028] For example, step S6 may be performed between step S3 and step S4. Step S6 is a process of forming the first charge functional layer 9 by applying a solution containing oxide nanoparticles onto the first intermediate layer 3.

[0029] Step S5 may be followed by step S7, which is a process of heating and cooling the laminate including the first electrode 2, the first intermediate layer 3, the first charge functional layer 9, the light-emitting layer 4, and the second electrode 5.

[0030] 6 is a cross-sectional view showing a schematic configuration of a light-emitting device 101 according to a second embodiment of the present disclosure. As shown in FIG. 6 , the first intermediate layer 3 may be formed in an island shape on the flat portion 17.

[0031] 7 is a cross-sectional view showing a schematic configuration of a light-emitting device 101 according to a third embodiment of the present disclosure. As shown in FIG. 7, an end 26 of a first electrode 2 may be covered with a bank layer 1.

[0032] 8 is a block diagram showing a schematic configuration of a display device 201 according to a fourth embodiment of the present disclosure. The display device 201 includes a light-emitting device 101 and a circuit board 105 including pixel circuits. Examples of the light-emitting device 101 include an OLED light-emitting device and a QLED light-emitting device.

[0033] [Additional Notes] Examples of materials for the bank layer 1 include acrylic resin with a Young's modulus of less than 2 GPa, epoxy resin with a Young's modulus of less than 3 GPa, polyimide with a Young's modulus of less than 5 GPa, and urethane with a Young's modulus of less than 70 GPa. Since the bank layer 1 has a small Young's modulus and is prone to elastic deformation, the Young's modulus of the first intermediate layer 3 may be 100 GPa or more.

[0034] A structure in which the first intermediate layer 3 is located below the first charge functional layer 9 is even better, because all layers above the first intermediate layer 3 can be separated by the cracks 14, and all stress in the light-emitting region 8 and directly above it can be released.

[0035] If cracks 14 are present outside light-emitting region 8 in a plan view of light-emitting device 101, light-emitting region 8 and the area immediately above it can be made crack-free. Cracks 14 are seen as dark lines, for example, when observed using transmitted light.

[0036] The corner portion 13 can cause stress concentration in all layers above the first intermediate layer 3. By suitably setting the angle of the corner portion 13 and the angle formed by the first edge 7, the corner portion 13 can be made to have a shape suitable for the occurrence of cracks 14. This makes it possible to locally thin at least one of the first charge functional layer 9, the light-emitting layer 4, and the second electrode 5, and also makes it possible to more reliably electrically isolate each light-emitting device 101.

[0037] When the first intermediate layer 3 elastically deforms, the stress is relieved, making it difficult for cracks 14 to occur at desired positions. Therefore, the greater the Young's modulus of the first intermediate layer 3, the more suitable it is for controlling the positions at which cracks 14 are formed. Similarly, the smaller the radius of curvature of the corner portions 13, the more suitable it is for controlling the positions at which cracks 14 are formed. To ensure this control, the corner portions 13 may have a shape with a radius of curvature of 150 nm or less.

[0038] The light-emitting device 101 may be based on a general QLED light-emitting device, with a first intervening layer 3 added between the first electrode 2 and the first charge functional layer 9 to generate cracks 14 at specific positions, thereby electrically isolating each light-emitting device 101 and improving the light-emitting characteristics and manufacturing yield.

[0039] The light emitting device 101 may be manufactured as follows.

[0040] The first electrode 2 is patterned on the circuit board 105. A wiring pattern is formed by general photolithography, and the first electrode 2 is formed by sputtering or vacuum deposition. Examples of materials for the first electrode 2 include ITO (indium tin oxide), IZO (indium zinc oxide), Al, and Ag.

[0041] Next, photolithography or a metal mask is used to form the bank layer 1. An example of the material of the bank layer 1 is a resin material such as polyimide.

[0042] Next, a film is formed by vacuum deposition or sputtering using the material of the first intermediate layer 3, and the first intermediate layer 3 extends from the bank surface 18 side toward the center of the opening 6 and has a first edge 7 on the center side of the opening 6 using photoresist. Examples of materials for the first intermediate layer 3 include SiN, SiO ２ , Al ２ O ３ , and ZrO ２ An example of the material of the first intermediate layer 3 is an insulating material having a Young's modulus of 100 GPa or more. Here, an example in which SiN is used as the material of the first intermediate layer 3 will be described. ４ and N.H. ３ The first intermediate layer 3 is formed of SiN by a vapor phase synthesis method such as plasma CVD (chemical vapor deposition) using a gas.

[0043] The first intermediate layer 3 is patterned using dry etching such as RIE (reactive ion etching). To form the corner portion 13 into the desired shape, a photoresist with a selectivity between the first intermediate layer 3 and the photoresist of greater than 20 is selected. Here, the selectivity is expressed as the ratio V / Vr of the etching rate V of the target object to the etching rate Vr of the photoresist. When the selectivity is infinite, the first end face 11 is etched perpendicular to the surface of the circuit board 105, but there is no photoresist that is completely etched by dry etching. When the selectivity is 5 to 6, the angle of the corner portion 13 can be approximately 110°. Following the above procedure, the photoresist is removed, and the first intermediate layer 3 having the desired shape of the first edge 7 is formed.

[0044] Next, the first charge functional layer 9 made of NiO is formed. The first charge functional layer 9 may be formed by a coating method, an inkjet method, or a vacuum deposition method using a nanoparticle-dispersed colloidal solution as a material. Any of these methods allows the first charge functional layer 9 to be formed to a substantially uniform thickness across the entire light-emitting device 101.

[0045] Following the first charge functional layer 9, a charge transport layer 10 is formed by coating or inkjet printing using TFB (poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)]) as a material. Here, by making the radius of curvature of the corner portion 13 small to 150 nm or less, strong surface tension acts on the first edge 7 when forming the charge transport layer 10, making it possible to form the charge transport layer 10 locally thin on the first edge 7. In the portion where the charge transport layer 10 is thinner than other regions, the electrical resistance in the cross-sectional direction can be made much higher than in the layer thickness direction, contributing to the electrical isolation of each light-emitting device 101.

[0046] Each layer from the light-emitting layer 4 to the second electrode 5 can be formed in the same manner as in the manufacturing method of a general QLED light-emitting device.

[0047] After the second electrode 5 is formed, the laminate including the first electrode 2, the first intermediate layer 3, the first charge functional layer 9, the light-emitting layer 4, and the second electrode 5 is heated to approximately 80°C in a vapor deposition apparatus, then held at that temperature for one minute, and then cooled to room temperature. In this laminate, stress is concentrated directly above the corner portion 13, and therefore cracks 14 can be intentionally formed directly above the first edge 7 due to the expansion caused by the heating and the contraction caused by the cooling. This reliably releases stress caused by differences in the elastic modulus and thermal expansion coefficient of each layer directly above the first edge 7, achieving electrical isolation between the light-emitting devices 101 and effectively suppressing the occurrence of unintended cracks in the light-emitting region 8 and / or directly above it.

[0048] If necessary, the light emitting device 101 may be encapsulated.

[0049] A light-emitting device having red, green, and blue subpixels was fabricated using the above manufacturing method. FIG. 9 is another cross-sectional view of the first edge 7 and its periphery according to an embodiment of the present disclosure. FIG. 10 is yet another cross-sectional view of the first edge 7 and its periphery according to an embodiment of the present disclosure. FIG. 2 illustrates a case where the light-emitting layer 4 emits red light. FIG. 9 illustrates a case where the light-emitting layer 4 emits green light. FIG. 10 illustrates a case where the light-emitting layer 4 emits blue light. FIGS. 2, 9, and 10 are diagrams of actual SEM images. According to FIGS. 2, 9, and 10, in the embodiment of the present disclosure, cracks 14 are formed directly above the first edge 7 in all cases where the light-emitting layer 4 emits red light, green light, and blue light. The radius of curvature of the corner portion 13 in the embodiment of the present disclosure was 100 nm or less in all cases. As shown in Figures 2, 9, and 10, although cracks occurred in the non-light-emitting regions (regions other than the light-emitting regions), it was confirmed that the occurrence of unintended cracks was suppressed in the light-emitting regions in all sub-pixels.

[0050] The present disclosure is not limited to the above-described embodiments, and various modifications are possible within the scope of the claims. Embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included in the technical scope of the present disclosure. Furthermore, new technical features can be formed by combining the technical means disclosed in each embodiment.

[0051] REFERENCE SIGNS LIST 1 Bank layer 2 First electrode 3 First intermediate layer 4 Light-emitting layer 5 Second electrode 6 Opening 7 First edge 8 Light-emitting region 9 First charge functional layer 10 Charge transport layer 11 First end face 13 Corner portion 14 Crack 15 First portion 16 Second portion 17 Flat portion 18 Bank surface 19 Sloped portion 20 Third portion 21 Second edge 22 Second intermediate layer 23 Second charge functional layer 24 Fourth portion 25 Distance between first edge and bank layer 26 End of first electrode 101 Light-emitting device 105 Circuit board 201 Display device

Claims

1. A light-emitting device comprising: a bank layer having an opening; a first electrode overlapping the opening in a planar view; a first intervening layer including a first edge overlapping the opening in a planar view; a light-emitting layer positioned above the first intervening layer; and a second electrode positioned above the light-emitting layer.

2. The light emitting device of claim 1, wherein said first edge is in contact with a top surface of said first electrode.

3. The light-emitting device according to claim 1, wherein the first intermediate layer has a larger Young's modulus than the bank layer.

4. The light emitting device according to any one of claims 1 to 3, further comprising a first charge functional layer in contact with an upper surface of said first intermediate layer.

5. The light emitting device according to claim 1 or 2, wherein the first intermediate layer has a first end surface including the first edge.

6. The light emitting device according to claim 1, wherein the first edge overlaps with the first electrode, the light emitting layer, and the second electrode in a plan view.

7. The light emitting device according to any one of claims 1 to 6, wherein the first intermediate layer does not overlap with a central portion of the opening in a plan view.

8. The light emitting device according to claim 5, wherein the first end face is a forward tapered surface.

9. The light emitting device according to claim 5, wherein an upper surface of said first intermediate layer and said first end surface form a corner portion.

10. The light emitting device according to claim 9, wherein the corner portion has a shape that forms an angle greater than 90°.

11. The light emitting device according to claim 9, wherein the corner portion has a shape having a radius of curvature of 150 nm or less.

12. The light emitting device according to claim 4, wherein at least one of the first charge functional layer, the light emitting layer, and the second electrode includes a crack that overlaps with the first intermediate layer in a plan view.

13. The light-emitting device described in claim 4, wherein the first intervening layer has a first end face including the first edge, an upper surface of the first intervening layer and the first end face form a corner portion, and a portion of at least one of the first charge functional layer, the light-emitting layer, and the second electrode that overlaps with an upper edge of the corner portion in a planar view is thinner than a portion that overlaps with a central portion of the opening in a planar view.

14. The light emitting device according to claim 5, wherein the first electrode includes a flat portion that overlaps with the opening in a planar view, and the first edge is located on the flat portion.

15. The light-emitting device according to any one of claims 1 to 14, wherein the bank layer has a bank surface, and the first electrode includes an inclined portion that extends along the bank surface.

16. The light emitting device according to claim 15, wherein the bank surface is a forward tapered surface.

17. The light-emitting device according to claim 15 or 16, wherein a portion of the first intermediate layer contacts the inclined portion.

18. The light emitting device according to claim 5, wherein the first edge is located between a light emitting region of the light emitting layer and the bank layer in a plan view.

19. The light emitting device according to claim 4, wherein the first intermediate layer has a greater Young's modulus than the first charge functional layer.

20. The light emitting device according to any one of claims 1 to 19, wherein the first intermediate layer is an insulating layer.

21. A light-emitting device according to any one of claims 1 to 20, comprising a second intervening layer including a second edge that overlaps with the opening in a planar view, the second edge intersecting an upper surface of the first electrode and not overlapping with a central portion of the opening in a planar view.

22. The light-emitting device according to any one of claims 1 to 14, wherein an end of the first electrode is covered with the bank layer.

23. The light emitting device according to claim 14, wherein the first intermediate layer is formed in an island shape on the flat portion.

24. The light emitting device according to claim 5, further comprising a second charge functional layer located above the light emitting layer, wherein the first edge overlaps with the second charge functional layer in a planar view.

25. The light-emitting device according to any one of claims 1 to 24, wherein the bank layer is an organic layer and the first intervening layer is an inorganic layer.

26. The first intermediate layer is SiO ２ , SiN, Al ２ O ３ , and ZrO ２ The light emitting device according to any one of claims 1 to 25, comprising:

27. The light emitting device according to any one of claims 1 to 26, wherein the first intermediate layer has a Young's modulus of 100 GPa or more.

28. The light emitting device according to claim 14, wherein the first intermediate layer has a portion having a thickness of 40 nm or more that contacts the flat portion.

29. The light-emitting device according to any one of claims 1 to 28, wherein the distance between the first edge and the bank layer is 3 μm or less.

30. The light emitting device according to any one of claims 1 to 29, wherein the first electrode is an anode, and the second electrode is a cathode.

31. The light emitting device according to any one of claims 1 to 30, wherein the light emitting layer includes a plurality of quantum dots that emit visible light.

32. The light emitting device according to claim 31, wherein the light emitting layer includes an inorganic matrix filling spaces between the quantum dots.

33. A display device comprising the light-emitting device according to any one of claims 1 to 32 and a circuit board including a pixel circuit.

34. A method for manufacturing a light-emitting device, comprising the steps of: forming a bank layer having an opening; forming a first electrode overlapping the opening in a planar view; forming a first intervening layer including a first edge overlapping the opening in a planar view and in contact with the first electrode; forming a light-emitting layer located above the first intervening layer; and forming a second electrode located above the light-emitting layer.

35. The method for manufacturing a light emitting device according to claim 34, wherein the first intermediate layer is formed by dry etching using a photoresist, and the dry etching has a selection ratio between the first intermediate layer and the photoresist of 0.5 to 50.

36. The method for producing a light-emitting device according to claim 34 or 35, wherein a first charge functional layer is formed by applying a solution containing oxide nanoparticles onto the first intermediate layer.

37. A method for producing a light emitting device according to claim 36, comprising the steps of heating and cooling a laminate including the first electrode, the first intermediate layer, the first charge functional layer, the light emitting layer, and the second electrode.

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