Display substrate and display device

Abstract

The present application relates to a display substrate and a display device. The display substrate comprises: at least one first display area; a second display area located on at least one side of the at least one first display area, the light transmittance of the second display area being smaller than that of the at least one first display area; and a plurality of first sub-pixels located in the at least one first display area, the first sub-pixels each comprising a first light-emitting element and a first pixel circuit, the first pixel circuit being configured to drive the first light-emitting element to emit light, wherein the first pixel circuit comprises a plurality of transistors, and at least one transistor among the plurality of transistors is an oxide transistor. In this way, the light transmittance of the first display area can be improved.

Description

Display substrate and display device Technical Field

[0001] The present application relates to the field of display, and in particular to a display substrate and a display device. Background Art

[0002] OLED (Organic Light-Emitting Diode) display structures have become the mainstream display structure due to their high color gamut, lightweight design, and flexibility. Currently, increasing the screen-to-body ratio has become one of the core themes of mobile phone innovation. Designs such as notch screens, widow's peaks, water drop screens, and punch-hole screens are all efforts to reduce the space occupied by the front camera. Under-display cameras (UDC) are inevitable in the era of full-screen phones. The main reason why front cameras cannot be placed under the screen is that the driving circuits and wires are opaque, resulting in a low overall screen transmittance. Therefore, if the camera is placed under the screen, it will not receive light from outside the screen.

[0003] Summary of the Invention

[0004] The purpose of the present application is to provide a display substrate and a display device, which can improve the light transmittance of a first display area.

[0005] According to a first aspect of an embodiment of the present application, a display substrate is provided, comprising:

[0006] At least one first display area, and a second display area located on at least one side of the at least one first display area; the light transmittance of the second display area is lower than the light transmittance of the at least one first display area;

[0007] a plurality of first sub-pixels located in the at least one first display area, the first sub-pixels comprising a first light-emitting element and a first pixel circuit, the first pixel circuit being configured to drive the first light-emitting element to emit light;

[0008] The first pixel circuit includes a plurality of transistors, and at least one of the plurality of transistors is an oxide transistor.

[0009] In some embodiments, the plurality of transistors are oxide transistors and do not include polysilicon transistors.

[0010] In some embodiments, the plurality of transistors include oxide transistors and polysilicon transistors, and the number of the polysilicon transistors is greater than the number of the oxide transistors.

[0011] In some embodiments, the first pixel circuit includes a driving transistor, and the driving transistor is a polysilicon transistor.

[0012] In some embodiments, the length of the driving transistor channel is greater than or equal to 20 um and less than or equal to 40 um.

[0013] In some embodiments, the first pixel circuit includes a first circuit transistor, a second circuit transistor and a third circuit transistor, the first electrode of the first circuit transistor is connected to the gate of the third circuit transistor and the second electrode of the second circuit transistor, the first electrode of the second circuit transistor is connected to the second electrode of the third circuit transistor, and the third circuit transistor is a driving transistor.

[0014] In some embodiments, the first circuit transistor and the second circuit transistor are oxide transistors.

[0015] In some embodiments, the first pixel circuit further includes a power line, a first initialization signal line, a second initialization signal line, and a data line;

[0016] The first pixel circuit includes a storage capacitor, a fourth circuit transistor, a fifth circuit transistor, a sixth circuit transistor and a seventh circuit transistor, the first level of the first circuit transistor is connected to the first plate of the storage capacitor, the second electrode of the first circuit transistor is connected to the first initialization signal line, the power line is connected to the second plate of the storage capacitor and the first electrode of the fifth circuit transistor, the second electrode of the fifth circuit transistor is connected to the first electrode of the third circuit transistor and the second electrode of the fourth circuit transistor, the first electrode of the fourth circuit transistor is connected to the data line, the first level of the second circuit transistor is connected to the first electrode of the sixth circuit transistor, the second electrode of the sixth circuit transistor is connected to the second electrode of the seventh circuit transistor, and the first electrode of the seventh circuit transistor is connected to the second initialization signal line.

[0017] In some embodiments, the third circuit transistor is a polysilicon transistor, and the first circuit transistor, the second circuit transistor, the fourth circuit transistor, the fifth circuit transistor, the sixth circuit transistor, and the seventh circuit transistor are all oxide transistors.

[0018] In some embodiments, the third circuit transistor includes an active layer, a gate located on one side of the active layer, a first stage of the third circuit transistor and a second stage of the third circuit transistor located on a side of the gate away from the active layer, the first stage of the third circuit transistor and the second stage of the third circuit transistor being connected to the active layer;

[0019] The display substrate further includes a first light shielding layer, which is located on a side of the active layer away from the gate, and an orthographic projection of the third circuit transistor on the display substrate is located within the orthographic projection of the first light shielding layer on the display substrate.

[0020] In some embodiments, the first light-emitting element includes an anode, a light-emitting layer, and a cathode that are sequentially arranged away from the first pixel circuit;

[0021] The orthographic projection of the third circuit transistor on the display substrate is located within the orthographic projection of the anode on the display substrate.

[0022] In some embodiments, the display substrate includes a second light-shielding layer, and the orthographic projections of the first circuit transistor, the second circuit transistor, the fourth circuit transistor, the fifth circuit transistor, the sixth circuit transistor, and the seventh circuit transistor on the display substrate are located within the orthographic projection of the second light-shielding layer on the display substrate.

[0023] In some embodiments, the first electrode and the second electrode of the storage capacitor are both made of transparent conductive materials.

[0024] In some embodiments, the display substrate further includes a gate line, a light-emitting control signal line, and a reset control signal line, the gate line being connected to the gate of the second circuit transistor and the gate of the fourth circuit transistor; the light-emitting control signal line being connected to the gate of the fifth circuit transistor and the gate of the sixth circuit transistor; and the reset control signal line being connected to the gate of the first circuit transistor and the gate of the seventh circuit transistor.

[0025] In some embodiments, at least one of the power line, the first initialization signal line, the second initialization signal line, the data line, the gate line, the light emitting control signal line, and the reset control signal line is made of a transparent conductive material.

[0026] In some embodiments, the power line, the first initialization signal line, the second initialization signal line, the data line, the gate line, the light emitting control signal line, and the reset control signal line are all made of transparent conductive materials.

[0027] In some embodiments, the first light-emitting element includes an anode, a light-emitting layer, and a cathode that are sequentially arranged away from the first pixel circuit;

[0028] At least some of the line segments among the power line, the first initialization signal line, the second initialization signal line, the data line, the gate line, the light-emitting control signal line and the reset control signal line overlap with the orthographic projection of the anode on the display substrate, and the at least some of the line segments overlapping with the anode are made of metal material, and the remaining line segments are made of transparent conductive material.

[0029] In some embodiments, the display substrate further includes a plurality of second sub-pixels located in the second display area, the second sub-pixels including a second light-emitting element and a second pixel circuit, and the second pixel circuit is configured to drive the second light-emitting element to emit light;

[0030] The second pixel circuit includes a plurality of transistors, and the plurality of transistors of the second pixel circuit include oxide transistors and / or polysilicon transistors.

[0031] In some embodiments, the system further includes a transition display area, the transition display area being located between the at least one first display area and the second display area, and the transition display area surrounding the at least one first display area;

[0032] The display substrate further includes a plurality of third sub-pixels located in the transition display area, the third sub-pixels including a third light-emitting element and a third pixel circuit, and the third pixel circuit is configured to drive the third light-emitting element to emit light;

[0033] The third pixel circuit includes a power line, a first initialization signal line, a second initialization signal line, a data line, a gate line, a light-emitting control signal line and a reset control signal line. The power line, the first initialization signal line, the second initialization signal line, the data line, the gate line, the light-emitting control signal line and the reset control signal line located in the third pixel circuit are metal wires, and the third pixel circuit uses the same transistors as the first pixel circuit.

[0034] In some embodiments, the pixel density of the plurality of second sub-pixels is greater than the pixel density of the plurality of first sub-pixels, and the pixel density of the plurality of second sub-pixels is greater than the pixel density of the plurality of third sub-pixels; or

[0035] The pixel density of the plurality of second sub-pixels is greater than the pixel density of the plurality of third sub-pixels, and the pixel density of the plurality of third sub-pixels is greater than the pixel density of the plurality of second sub-pixels.

[0036] In some embodiments, the number of the first display areas is 2 or 3.

[0037] In some embodiments, the transmittance of the second display area is less than the transmittance of the transition display area, and the transmittance of the transition display area is less than the transmittance of the at least one first display area.

[0038] A second aspect of the embodiments of the present application provides a display device, including the display substrate as shown in the above embodiment;

[0039] The display device further includes at least one optical sensor, and the at least one first display area is arranged in a one-to-one correspondence with the at least one optical sensor.

[0040] In some embodiments, the optical sensor is one or more of an ambient light sensor, a distance sensor, a camera sensor, and an infrared sensor.

[0041] The beneficial technical effect brought about by the technical solution provided by the embodiment of the present application is: by providing at least one oxide transistor in the first sub-pixel of the first display area, the light transmittance of the first display area can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0043] FIG1 is a schematic diagram of a planar structure of a display substrate according to an embodiment of the present application.

[0044] FIG2 is a schematic diagram of a planar structure of a display substrate according to an embodiment of the present application.

[0045] FIG3 is a schematic cross-sectional view taken along line AA′ in FIG2 .

[0046] FIG4 is a schematic cross-sectional view of the line BB′ in FIG2 .

[0047] FIG. 5 is a schematic diagram of a display device according to an embodiment of the present application.

[0048] FIG6 is a schematic cross-sectional view of CC' in FIG1 .

[0049] FIG7 is an equivalent circuit diagram of a pixel circuit and a light-emitting device according to an embodiment of the present application.

[0050] FIG8 is an equivalent circuit diagram of another pixel circuit and a light-emitting device according to an embodiment of the present application.

[0051] FIG9 is an equivalent circuit diagram of another pixel circuit and a light-emitting device according to an embodiment of the present application.

[0052] FIG10 is an equivalent circuit diagram of another pixel circuit and a light-emitting device according to an embodiment of the present application.

[0053] FIG11 is an equivalent circuit diagram of another pixel circuit and a light-emitting device according to an embodiment of the present application.

[0054] FIG12 is an equivalent circuit diagram of another pixel circuit and a light-emitting device according to an embodiment of the present application.

[0055] FIG13 is an equivalent circuit diagram of another pixel circuit and a light-emitting device according to an embodiment of the present application.

[0056] FIG14 is a schematic diagram of a planar structure of a display substrate according to an embodiment of the present application.

[0057] FIG15 is a schematic diagram of a planar structure of a display substrate according to an embodiment of the present application.

[0058] FIG16 is a schematic diagram of a planar structure of a display substrate according to an embodiment of the present application.

[0059] FIG17 is a schematic diagram of a planar structure of a display substrate according to an embodiment of the present application. DETAILED DESCRIPTION

[0060] Exemplary embodiments will be described in detail herein, with examples illustrated in the accompanying drawings. In the following description, when referring to the drawings, identical numerals in different figures represent identical or similar elements, unless otherwise indicated. The embodiments described in the following exemplary embodiments are not intended to represent all embodiments consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present application, as detailed in the appended claims.

[0061] The terms used in this application are for the purpose of describing specific embodiments only and are not intended to limit this application. Unless otherwise defined, technical or scientific terms used in this application should have the ordinary meaning understood by a person of ordinary skill in the art to which this application belongs. The use of "a" or "an," and similar terms in this specification and claims does not indicate a limitation of quantity, but rather indicates the presence of at least one. "Multiple" means two or more. "Include" or "comprising," and similar terms mean that the elements or objects listed before "include" or "comprising" include the elements or objects listed after "include" or "comprising," and their equivalents, and do not exclude other elements or objects. "Connected" or "connected," and similar terms are not limited to physical or mechanical connections and can include electrical connections, whether direct or indirect. "On" and / or "below," and similar terms are for convenience only and are not limited to a single position or spatial orientation. As used in this specification and the appended claims, the singular forms "a," "the," and "the" are intended to include the plural forms unless the context clearly indicates otherwise. It will also be understood that the term "and / or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.

[0062] The triangles, rectangles, trapezoids, pentagons or hexagons in this specification are not in the strict sense, but may be approximate triangles, rectangles, trapezoids, pentagons or hexagons, etc. There may be some small deformations caused by tolerances, and there may be chamfers, arc edges and deformations.

[0063] The term "about" in the present disclosure refers to a numerical value that is not strictly defined and allows for process and measurement errors.

[0064] The transistors used in this application can be triodes, thin film transistors, field effect transistors or other devices with the same characteristics. In the embodiments of this application, in order to distinguish the two electrodes of the transistor except the control electrode, one electrode is called the first electrode and the other electrode is called the second electrode.

[0065] In actual operation, when the transistor is a triode, the control electrode can be the base, the first electrode can be the collector, and the second electrode can be the emitter; or, the control electrode can be the base, the first electrode can be the emitter, and the second electrode can be the collector.

[0066] In actual operation, when the transistor is a thin film transistor or a field effect transistor, the control electrode can be a gate, the first electrode can be a drain, and the second electrode can be a source; or, the control electrode can be a gate, the first electrode can be a source, and the second electrode can be a drain.

[0067] In this application, the terms "film" and "layer" may be interchanged. For example, "conductive layer" may be replaced with "conductive film." Similarly, "insulating film" may be replaced with "insulating layer."

[0068] Traditional driving circuits are not light-transmitting, resulting in an overall low transmittance. Therefore, photosensitive devices such as cameras are placed under the screen and cannot obtain external light. Therefore, the current practice is generally to set up bangs screens, widow's peaks, water drop screens, hole-punch screens, etc. to accommodate photosensitive devices such as cameras, so that external light can enter photosensitive devices such as cameras. However, this practice will occupy the space of the screen and is not beautiful.

[0069] One current solution is to use a PM (Passive Matrix) drive method in the camera area. By reducing the number of metal lines and the density of pixels, the area of ​​the opaque area is reduced and the area of ​​the translucent area is increased. However, this solution still cannot meet the needs of under-screen cameras. Because the translucent area contains light-absorbing or reflective materials, the transmittance is very low, such as the semi-transparent material Mg / Ag used as the cathode and the circular polarizer (C-Pol) with a transmittance of less than 50%. As a result, very little light from the outside world enters the camera through the panel (usually <5%). In addition, the presence of metal lines causes diffraction of the light entering the camera, resulting in a large difference between the light received by the camera and the light taken in by the outside world, making it impossible to obtain a clear image with sufficient light.

[0070] Referring to Figures 1-4, the present application proposes a display substrate, including: a display area AA and a peripheral area W surrounding the display area AA, the display area AA includes at least one first display area A1 and a second display area A3 located on at least one side of the at least one first display area A1; the light transmittance of the second display area A3 is less than the light transmittance of the at least one first display area A1; a plurality of first sub-pixels, located in at least one first display area A1, the first sub-pixel includes a first light-emitting element 21 and a first pixel circuit 11, the first pixel circuit 11 is configured to drive the first light-emitting element 21 to emit light; wherein, the first pixel circuit 11 includes a plurality of transistors, at least one transistor among the plurality of transistors is an oxide transistor 230.

[0071] As shown in FIG2 , the first display area A1 may include a first-type display area A11, second-type display areas A12 and A13, and the like. The first-type display area A11, the second-type display areas A12 and A13 include multiple first sub-pixels, each of which includes a first light-emitting element 21 and a first pixel circuit 11. The first pixel circuit 11 includes multiple transistors, such as a 7T1C pixel circuit, at least one of which is an oxide transistor 230. The oxide transistor 230 may be made of materials such as indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), indium tin zinc oxide (ITZO), a first indium gallium zinc tin oxide (IGZYO) (Y is a rare earth metal element), or a second indium gallium zinc tin oxide (IGZXO) (X is a rare earth metal element other than Y). Since indium zinc oxide (IZO), indium gallium tin oxide (IGTO), indium tin zinc oxide (ITZO), first indium gallium zinc tin oxide (IGZYO), and second indium gallium zinc tin oxide (IGZXO) all have high light transmittance, the oxide transistor 230 has higher light transmittance than the polysilicon transistor 210, resulting in the first display area A1 of the display substrate having high light transmittance.

[0072] Based on the above description, the present application can set the optical sensor directly under the first display area A1, and there is no need to set up additional bangs, widow's peaks, water drops, etc., thereby increasing the screen-to-body ratio and making the entire screen look more beautiful.

[0073] In some examples, the first light-emitting element 21 and the first pixel circuit 11 are disposed in the same first display area A1, and the first pixel circuit 11 connected to the first light-emitting element 21 is disposed internally. The second light-emitting element 22 is disposed in the first display area A1, and the second pixel circuit 12 is disposed in the transition display area A2, and the second pixel circuit 12 connected to the second light-emitting element 22 is disposed externally.

[0074] In some examples, the pixel circuits connected to a portion of the light-emitting elements in at least one first display area A1 can be configured internally, while the pixel circuits connected to another portion of the light-emitting elements can be configured externally. Combining external and internal pixel circuit configurations within the same first display area A1 can help increase the size of the first display area A1 and achieve an optimal balance between light transmittance and size. For example, multiple first display areas A1 can employ a combination of external and internal pixel circuit configurations.

[0075] In some examples, the pixel circuit connected to the light-emitting element of at least one first display area A1 can be set up in an external manner, and the pixel circuit connected to the light-emitting element of at least another first display area A1 can be set up in a built-in manner. Among multiple first display areas A1, some first display areas A1 adopt an external manner to set the pixel circuit, and another part of the first display areas A1 can adopt a built-in manner to set the pixel circuit. For example, among two first display areas A1, one first display area A1 can adopt an external pixel circuit manner, and the other first display area A1 can adopt a built-in pixel circuit manner. For another example, among three or more first display areas A1, at least two first display areas A1 can adopt an external pixel circuit manner, and the remaining first display areas A1 can adopt a built-in pixel circuit manner.

[0076] In some examples, among multiple first display areas A1, at least one first display area A1 may adopt a combination of a built-in pixel circuit method and an external pixel circuit method, at least another first display area A1 may adopt a built-in pixel circuit method, and at least another first display area A1 may adopt an external pixel circuit method. For example, among three first display areas A1, the first first display area A1 may adopt a combination of a built-in pixel circuit method and an external pixel circuit method, the second first display area A1 may adopt a built-in pixel circuit method, and the third first display area A1 may adopt an external pixel circuit method. For another example, among more than three first display areas A1, at least two first display areas A1 may adopt a combination of a built-in pixel circuit method and an external pixel circuit method, another first display area A1 may adopt a built-in pixel circuit method, and the remaining first display area A1 may adopt an external pixel circuit method. For another example, among three or more first display areas A1, at least two of the first display areas A1 may employ a built-in pixel circuit approach (or an external pixel circuit approach), another first display area A1 may employ a combination of built-in and external pixel circuit approaches, and the remaining first display areas A1 may employ an external pixel circuit approach (or a built-in pixel circuit approach). In this way, multiple first display areas A1 with different light transmittances can be implemented to meet different functional requirements.

[0077] In some examples, as shown in Figures 1 and 2, the three first display areas A1 may include: a first type display area A11, and two second type display areas A12 and A13. The three first display areas A1 may be arranged in sequence along the second direction X. The first type display area A11 may be located between the two second type display areas A12 and A13 in the second direction X. For example, the second type display area A12 may be located on one side of the first type display area A11 along the second direction X, and the second display area A13 may be located on the side opposite to the first type display area A11 along the second direction X. However, this embodiment is not limited to this. In other examples, the first type display area A11, the two second type display areas A12 and A13 may be arranged in sequence along the second direction X or in the opposite direction of the second direction X. In other examples, the multiple first display areas A1 may include: a first type display area and a second type display area arranged along the first direction Y, or may include a first type display area and a second type display area arranged along the second direction X.

[0078] In some examples, as shown in Figures 1 and 2, the first type display area A11 and the two second type display areas A12 and A13 can be connected in sequence along the arrangement direction (e.g., the second direction X), and the first display area A1 can be connected between the two second type display areas A12 and A13. The transition display area A2 can be located in an area outside the three first display areas A1. However, this embodiment is not limited to this. In other examples, two adjacent first display areas A1 along the arrangement direction (e.g., the second direction X) may not be connected, and adjacent first display areas A1 may be separated by a transition display area A2.

[0079] In some examples, as shown in Figures 1 and 2, the display area AA can be roughly rectangular. The display area AA can include a first display area A1, a transition display area A2, and a second display area A3, or the display area AA only includes the first display area A1 and the second display area A3. The number of first display areas A1 can be one or more, for example, two or three. As shown in Figure 1, the shapes of the three first display areas A1 can be roughly the same, for example, the first type display area A11, the two second type display areas A12 and A13 can all be circular or elliptical. In other examples, the shapes of the multiple first display areas A1 can be partially the same. The total shape of the three first display areas A1 can be roughly a rounded rectangle or an ellipse, the shape of the first type display area A11 can be roughly circular, and the center of the first type display area A11 can be the same as the center position of the total shape of the three first display areas A1. However, this embodiment is not limited to this. For example, the first display area can be rectangular, and the second display area can be circular or elliptical. In other examples, the shapes of the two second display areas may be different. For example, the shape of one second display area may be rectangular, and the shape of the other second display area may be elliptical or circular.

[0080] In some examples, the light transmittance of the plurality of first display areas A1 may be greater than or equal to the light transmittance of the second display area A3, and the light transmittance of the second display area A3 may be less than or equal to the light transmittance of the transitional display area A2. For example, the light transmittance of the second display area A3 may be less than the light transmittance of the plurality of first display areas A1, but greater than the light transmittance of the transitional display area A2. Alternatively, the light transmittance of the second display area A3 may be less than the light transmittance of the transitional display area A2, and the light transmittance of the transitional display area A2 may be less than the light transmittance of the plurality of first display areas A1.

[0081] In some examples, the light transmittance of the first type display area A11 can be greater than or equal to the light transmittance of the second type display areas A12 and A13. For example, the light transmittance of the first type display area A11 can be greater than the light transmittance of the second type display areas A12 and A13, the light transmittance of the second type display areas A12 and A13 can be substantially the same, or the light transmittance of the second type display area A12 can be greater than the light transmittance of the second display area A13, or the light transmittance of the second type display area A12 can be less than the light transmittance of the second display area A13.

[0082] In some examples, the light transmittance of each region may include visible light transmittance and infrared light transmittance. For example, the infrared light transmittance of each region may be greater than or equal to the visible light transmittance. In this embodiment, visible light refers to the portion of the electromagnetic spectrum that can be perceived by the human eye, such as wavelengths between 380 and 780 nanometers (nm). Infrared light refers to electromagnetic waves in the infrared band, which is between visible light and microwaves and has a wavelength range of 780 to 3000 nanometers.

[0083] In some examples, the functions corresponding to multiple first display areas A1 may be different or partially the same. For example, the first type display area A11 can be configured to support visible light transmission, so that the camera set under the screen can receive visible light to realize the photo or video function; the camera's orthographic projection on the display substrate can at least partially overlap with the first type display area A11. The functions corresponding to the second type display areas A12 and A13 can be the same. For example, the second type display area A12 can be configured to support infrared light transmission, so that the infrared sensor set under the screen can transmit infrared light, so as to realize functions such as face recognition by using infrared light. For example, the orthographic projection of the infrared sensor on the display substrate can at least partially overlap with the second type display areas A12 and A13. This embodiment is not limited to this. In other examples, the functions corresponding to the two second type display areas may be different. For example, one second type display area can be configured to support distance sensing, and the other second type display area can be configured to support ambient light sensing.

[0084] In some examples, the ratio of the resolutions of the first display area A1 and the transitional display area A2 can be approximately 0.8 to 1.2. For example, the resolution of the first display area A1 can be substantially the same as the resolution of the transitional display area A2. The resolution of the second display area A3 can be substantially the same as the resolution of the transitional display area A2. This embodiment is not limited to this.

[0085] As shown in Figures 14 to 17, Figure 14 is a schematic diagram showing that the first display area A1 is circular and is disposed in the middle of the second display area A3, Figure 15 is a schematic diagram showing that the first display area A1 is rectangular and is disposed in the middle of the upper edge of the display area AA, Figure 16 is a schematic diagram showing that the first display area A1 is rectangular and is disposed at the edge corners of the display area AA, and Figure 17 is a schematic diagram showing that the first display area A1 is two rectangles and is disposed at the two edge corners of the display area AA. The first display area A1 can be disposed in the middle of the display area AA, and the first display area A1 can be circular, oval, square, etc. The first display area A1 can also be disposed on the side of the display area AA, such as one side or both sides. The present application does not limit the arrangement positions of the multiple first display areas A1. The multiple first display areas A1 can also be disposed in the middle or around the display substrate. As long as the first display area A1 is disposed on the display substrate, it should be within the scope of protection of the present application.

[0086] In one embodiment, the multiple transistors of the first pixel circuit 11 in the first display area A1 are oxide transistors 230, and no polysilicon transistor 210 is included. Setting all the multiple transistors in the first display area A1 as oxide transistors 230 can maximize the light transmittance of the first display area A1. Placing an optical sensor below the first display area A1 can achieve the best effect.

[0087] As shown in FIG3 , FIG3 is a schematic cross-sectional view taken along line AA′ in FIG2 . The display substrate may generally include a circuit layer 200, a light-emitting element, a pixel definition layer 300, and an encapsulation layer 700. The light-emitting element includes an anode 400, a cathode 500, and a light-emitting layer 600 located between the anode 400 and the cathode 500. The circuit layer 200 is connected to the light-emitting element and is used to drive the light-emitting element to emit light. The pixel definition layer 300 is used to define the shape and size of the pixel. The cathode 500 is used to cooperate with the anode 400 to form an electric potential difference to illuminate the light-emitting layer 600. The light-emitting layer 600 emits light or extinguishes light in cooperation with the anode 400 and the cathode 500. The encapsulation layer 700 is used to encapsulate the screen.

[0088] The anode 400 is disposed below the light-emitting layer 600 along the screen thickness direction H, the pixel definition layer 300 is disposed on both sides of the anode 400 and the light-emitting layer 600, the circuit layer 200 is disposed below the anode and the pixel definition layer 300 along the screen thickness direction H, the cathode 500 is disposed above the light-emitting layer 600 and the pixel definition layer 300 along the screen thickness direction H, and an encapsulation layer 700 is further disposed in sequence above the cathode 500 along the screen thickness direction H. The pixel circuit layer 200 controls the light-emitting elements and thus controls the light emission of the light-emitting layer 600, and passes upward through the encapsulation layer 700.

[0089] In one embodiment, the multiple transistors include oxide transistors 230 and polysilicon transistors 210, with the number of polysilicon transistors 210 being greater than the number of oxide transistors 230. Polysilicon transistors 210 have lower resistance and faster response speed than oxide transistors 230. The mixed arrangement of polysilicon transistors 210 and oxide transistors 230 can ensure that the first display area A1 has a relatively sensitive response speed while maintaining the light transmittance of the first display area A1.

[0090] In one embodiment, the first pixel circuit 11 includes a driving transistor, which is a polysilicon transistor 210. The polysilicon transistor 210 is a high-temperature polysilicon transistor 210 or a low-temperature polysilicon transistor 210. The driving transistor (DTFT) is the largest of all transistors, and because the channel of the oxide transistor 230 is larger than that of the polysilicon transistor 210 under the same load capacity, replacing the driving transistor (DTFT) with the polysilicon transistor 210 can effectively reduce the overall area of ​​the driving circuit, thereby improving the resolution of the screen.

[0091] Through a large number of experiments, the inventors found that when the length of the driving transistor (DTFT) channel is less than or equal to 20um, the driving transistor (DTFT) is difficult to undertake the driving task; when the length of the driving transistor (DTFT) is greater than or equal to 40um, the driving transistor (DTFT) is too large, thereby affecting the resolution of the screen. Setting the driving transistor DTFT to a length greater than or equal to 20um and less than or equal to 40um can adapt to the driving task on the one hand, and to the corresponding screen resolution on the other hand. In this embodiment, the length of the driving transistor (DTFT) is set to be greater than or equal to 20um and less than or equal to 40um, which can adapt to the driving task while adapting to the corresponding screen resolution. Of course, in other embodiments, the length of the driving transistor (DTFT) can also be set to be greater than or equal to 10um and less than or equal to 100um.

[0092] In one embodiment, referring to Figures 7 to 13 , the first circuit transistor T1, the second circuit transistor T2, the third circuit transistor T3, the fourth circuit transistor T4, the fifth circuit transistor T5, the sixth circuit transistor T6, and the seventh circuit transistor T7 in Figure 7 are all oxide transistors 230, and the second circuit transistor T2, the third circuit transistor T3, the fourth circuit transistor T4, the fifth circuit transistor T5, the sixth circuit transistor T6, and the seventh circuit transistor T7 in Figure 8 are all polysilicon transistors 210, such as low-temperature polysilicon transistors 210, and the first circuit transistor T1 is an oxide transistor 230. The third circuit transistor T3, the fourth circuit transistor T4, the fifth circuit transistor T5, the sixth circuit transistor T6, and the seventh circuit transistor T7 in Figure 9 are all polysilicon transistors 210, such as low-temperature polysilicon transistors 210. The first circuit transistor T1 and the second circuit transistor T2 are oxide transistors 230. In FIG10 , the third circuit transistor T3, the fifth circuit transistor T5, the sixth circuit transistor T6, and the seventh circuit transistor T7 are all polysilicon transistors 210, such as low-temperature polysilicon transistors 210. The first circuit transistor T1, the second circuit transistor T2, and the fourth circuit transistor T4 are all oxide transistors 230. In FIG11 , the third circuit transistor T3, the sixth circuit transistor T6, and the seventh circuit transistor T7 are all polysilicon transistors 210, such as low-temperature polysilicon transistors 210. The first circuit transistor T1, the second circuit transistor T2, the fourth circuit transistor T4, and the fifth circuit transistor T5 are all oxide transistors 230. In FIG12 , the third circuit transistor T3 and the seventh circuit transistor T7 are all polysilicon transistors 210, such as low-temperature polysilicon transistors 210. The first circuit transistor T1, the second circuit transistor T2, the fourth circuit transistor T4, the fifth circuit transistor T5, and the sixth circuit transistor T6 are all oxide transistors 230. In FIG13 , the third circuit transistor T3 is a polysilicon transistor 210, such as a low-temperature polysilicon transistor 210. The first circuit transistor T1, the second circuit transistor T2, the fourth circuit transistor T4, the fifth circuit transistor T5, the sixth circuit transistor T6, and the seventh circuit transistor T7 are all oxide transistors 230. The first pixel circuit 11 includes the first circuit transistor T1, the second circuit transistor T2, and the third circuit transistor T3. The first electrode of the first circuit transistor T1 and the gate of the third circuit transistor T3 are connected to the second electrode of the second circuit transistor T2. The first electrode of the second circuit transistor T2 is connected to the second electrode of the third circuit transistor T3. The third circuit transistor T3 is a driving transistor. The third circuit transistor T3 can control the current in the first pixel circuit 11 to control the light emission of the light-emitting layer.

[0093] Furthermore, the first circuit transistor T1 and the second circuit transistor T2 are oxide transistors 230. Since the oxide transistor 230 has high light transmittance, setting the first circuit transistor T1 and the second circuit transistor T2 as oxide transistors 230 can improve the light transmittance of the first display area A1.

[0094] In this embodiment, the first pixel circuit 11 further includes a power line ELVDD, a first initialization signal line Vinit, a second initialization signal line Vinit and a data line Data(m); the first pixel circuit 11 includes a storage capacitor Cst, a fourth circuit transistor T4, a fifth circuit transistor T5, a sixth circuit transistor T6 and a seventh circuit transistor T7, a first stage of the first circuit transistor T1 is connected to the first electrode plate of the storage capacitor Cst, a second electrode of the first circuit transistor T1 is connected to the first initialization signal line Vinit, the power line ELVDD is connected to the second electrode plate of the storage capacitor Cst and the first electrode of the fifth circuit transistor T5, the second electrode of the fifth circuit transistor T5 is connected to the first electrode of the third circuit transistor T3 and the second electrode of the fourth circuit transistor T4, the first electrode of the fourth circuit transistor T4 is connected to the data line Data(m), the first stage of the second circuit transistor T2 is connected to the first electrode of the sixth circuit transistor T6, the second electrode of the sixth circuit transistor T6 is connected to the second electrode of the seventh circuit transistor T7, and the first electrode of the seventh circuit transistor T7 is connected to the second initialization signal line Vinit.

[0095] The circuit in this embodiment is a 7T1C circuit. The user can control the power line ELVDD, the first initialization signal line Vinit, the second initialization signal line Vinit and the data line Data(m) to control whether the light emitting transistor EL is lit.

[0096] 13 , the third circuit transistor T3 is a polysilicon transistor 210 , and the first circuit transistor T1 , the second circuit transistor T2 , the fourth circuit transistor T4 , the fifth circuit transistor T5 , the sixth circuit transistor T6 and the seventh circuit transistor T7 are all oxide transistors 230 .

[0097] Based on the above configuration, in this embodiment, only the third circuit transistor T3 is a polysilicon transistor 210, and the other transistors are configured as oxide transistors 230, which can greatly enhance the light transmittance of the first display area A1 while ensuring the circuit size.

[0098] Furthermore, as shown in FIG4 , which is a schematic cross-sectional view taken along line BB' in FIG2 , the first light-emitting element 21 includes an anode 400, a light-emitting layer 600, and a cathode 500, which are sequentially arranged away from the first pixel circuit 11; the orthographic projection of the third circuit transistor T3 on the display substrate is located within the orthographic projection of the anode 400 on the display substrate.

[0099] Viewed from the thickness direction H of the display substrate, the transistors and wires within the orthographic projection of the anode are completely blocked by the anode. Therefore, setting the transistors within the orthographic projection of the anode to polysilicon transistors 210 will not affect the light transmittance of the light-transmitting region 1100 .

[0100] Because the oxide transistor 230 is larger than the polysilicon transistor 210 under the same carrying capacity, the transistor disposed under the anode is at least partially formed of the polysilicon transistor 210 to reduce the size of the transistor.

[0101] Of course, the present application not only includes the above-mentioned 7T1C driving circuit including the first circuit transistor T1, the second circuit transistor T2, the third circuit transistor T3, the fourth circuit transistor T4, the fifth circuit transistor T5, the sixth circuit transistor T6, the seventh circuit transistor T7, and the capacitor Cst, but may also include an 8T1C driving circuit including the first circuit transistor T1, the second circuit transistor T2, the third circuit transistor T3, the fourth circuit transistor T4, the fifth circuit transistor T5, the sixth circuit transistor T6, the seventh circuit transistor T7, the eighth circuit transistor T8, and the capacitor Cst, and a 4T1C driving circuit including the first circuit transistor T1, the second circuit transistor T2, the third circuit transistor T3, the fourth circuit transistor T4, and the capacitor Cst, etc. The specific connection methods thereof are not further described here. As long as the driving transistor (DTFT) is replaced with the polysilicon transistor 210, it should be within the scope of protection of the present application.

[0102] In one embodiment, referring to FIG. 3 , where FIG. 7 is an equivalent circuit diagram of FIG. 3 , the third circuit transistor T3 includes an active layer 240, a top gate 231 and a bottom gate 232 located on either side of the active layer 240, a first stage (drain) 233 of the third circuit transistor T3 and a second electrode (source) 234 of the third circuit transistor T3 located on the side of the top gate 231 away from the active layer 240. The first stage 233 and the second electrode 234 of the third circuit transistor T3 are connected to the active layer 240, and the side of the second electrode 234 of the third circuit transistor T3 away from the active layer 240 is connected to the anode 400 via a connecting electrode 235. The display substrate further includes a first light shielding layer 1400. The first light shielding layer 1400 is located on the side of the active layer 240 away from the top gate 231, and the orthographic projection of the third circuit transistor T3 on the display substrate is located within the orthographic projection of the first light shielding layer 1400 on the display substrate. The first light shielding layer 1400 is configured to block infrared light.

[0103] The inventors learned from experiments that the driving transistor (DTFT) of the polysilicon transistor 210 is prone to current anomalies when exposed to infrared light. Therefore, a first light-shielding layer 1400 is set to block the infrared light of the optical sensor to prevent current anomalies, thereby ensuring the stability of the display device.

[0104] In one embodiment, the first light-shielding layer 1400 is at least partially positioned beneath the anode. The first light-shielding layer 1400 can block light, and the anode can also block light. If the first light-shielding layer 1400 and the anode are arranged separately, then, viewed through the thickness of the display substrate, both the first light-shielding layer 1400 and the anode block some light, thereby reducing the light transmittance of the display substrate. This embodiment places the first light-shielding layer 1400 at least partially beneath the anode, which can increase the light transmittance of the display device compared to a case where the first light-shielding layer 1400 and the anode are arranged separately.

[0105] Preferably, the first light-shielding layer 1400 is completely disposed under the anode. In this case, only the anode can be seen from the first display area A1 when viewed from the thickness direction H of the display substrate, while the first light-shielding layer 1400 is completely blocked when viewed from the thickness direction H of the display substrate, thereby obtaining maximum light transmittance of the display device.

[0106] In one embodiment, the display substrate includes a second light-shielding layer 1300 , and the orthographic projections of the first circuit transistor T1 , the second circuit transistor T2 , the fourth circuit transistor T4 , the fifth circuit transistor T5 , the sixth circuit transistor T6 , and the seventh circuit transistor T7 on the display substrate are located within the orthographic projection of the second light-shielding layer 1300 on the display substrate.

[0107] Through experiments, the inventors have discovered that visible light can affect some types of oxide transistors 230 in this application, increasing their electron mobility. Therefore, in this embodiment, the oxide transistors 230 are configured to block visible light while transmitting infrared light. This configuration allows the oxide transistors 230 to function normally, while also allowing the optical sensors located beneath the second light-shielding layer 1300 to function normally, such as infrared sensors.

[0108] In one embodiment, the first electrode and the second electrode of the storage capacitor Cst are both made of transparent conductive materials. Using the storage capacitor Cst as a transparent conductive material, combined with the use of the oxide transistor 230 described in the above embodiment, can further increase the light transmittance of the first display area A1.

[0109] Furthermore, the display substrate also includes a gate line Scan(n), a light-emitting control signal line EM(n), and a reset control signal line Scan(n-1). The gate line Scan(n) is connected to the gate of the second circuit transistor T2 and the gate of the fourth circuit transistor T4; the light-emitting control signal line EM(n) is connected to the gate of the fifth circuit transistor T5 and the gate of the sixth circuit transistor T6; and the reset control signal line Scan(n-1) is connected to the gate of the first circuit transistor T1 and the gate of the seventh circuit transistor T7. By controlling the connectivity of the power supply line ELVDD, the first initialization signal line Vinit, the second initialization signal line Vinit, the data line Data(m), the gate line Scan(n), the light-emitting control signal line EM(n), and the reset control signal line Scan(n-1), the light-emitting device is turned on and off.

[0110] In one embodiment, at least one of the power line ELVDD, the first initialization signal line Vinit, the second initialization signal line Vinit, the data line Data(m), the gate line Scan(n), the emission control signal line EM(n) and the reset control signal line Scan(n-1) is made of a transparent conductive material.

[0111] The transparent conductive material here can be selected from materials such as indium tin oxide (ITO) and zinc oxide (IZO). Since materials such as indium tin oxide (ITO) and zinc oxide (IZO) have high light transmittance compared to metal wires, the display substrate equipped with such materials has high light transmittance.

[0112] The user can control the lighting of the light-emitting element (for example, the first light-emitting element 21) by controlling the power line ELVDD, the first initialization signal line Vinit, the second initialization signal line Vinit, the data line Data(m), the gate line Scan(n), the light-emitting control signal line EM(n) and the reset control signal line Scan(n-1).

[0113] Preferably, the power line ELVDD, the first initialization signal line Vinit, the second initialization signal line Vinit, the data line Data(m), the gate line Scan(n), the emission control signal line EM(n), and the reset control signal line Scan(n-1) are all made of transparent conductive materials. When all of the above materials are transparent conductive materials, the first display area A1 can achieve maximum light transmittance.

[0114] In one embodiment, the first light-emitting element 21 includes an anode 400, a light-emitting layer 600 and a cathode 500, which are arranged in sequence away from the first pixel circuit 11; at least part of the line segments of the power line ELVDD, the first initialization signal line Vinit, the second initialization signal line Vinit, the data line Data(m), the gate line Scan(n), the light-emitting control signal line EM(n) and the reset control signal line Scan(n-1) overlap with the orthographic projection of the anode 400 on the display substrate, and at least part of the line segments overlapping with the anode 400 are made of metal material, and the remaining line segments are made of transparent conductive material.

[0115] Because transparent conductive materials have a higher resistance than metal materials, replacing them with metal materials can improve conductivity. Anode 400 is made of an opaque material. Therefore, replacing the intersection of the power line ELVDD, the first initialization signal line Vinit, the second initialization signal line Vinit, the data line Data(m), the gate line Scan(n), the emission control signal line EM(n), and the reset control signal line Scan(n-1) with metal materials will not affect the overall light transmittance of the first display area A1.

[0116] In summary, this embodiment replaces the overlapping parts of the power line ELVDD, the first initialization signal line Vinit, the second initialization signal line Vinit, the data line Data(m), the gate line Scan(n), the light-emitting control signal line EM(n) and the reset control signal line Scan(n-1) with metal materials, which will not affect the overall light transmittance of the first display area A1 while improving the conductive performance.

[0117] In some examples, a pixel circuit may include multiple transistors and at least one capacitor. For example, the pixel circuit may have a 3T1C, 4T1C, 5T1C, 5T2C, 6T1C, 7T1C, or 8T1C structure. In the above circuit structures, T refers to a thin-film transistor, and C refers to a capacitor. The number before T represents the number of thin-film transistors in the circuit, and the number before C represents the number of capacitors in the circuit.

[0118] In some examples, the multiple transistors in the pixel circuit can be P-type transistors or N-type transistors. Using the same type of transistors in the pixel circuit can simplify the process flow, reduce the difficulty of manufacturing the display substrate, and improve the product yield. In other examples, the multiple transistors in the pixel circuit can include P-type transistors and N-type transistors.

[0119] In some examples, multiple transistors in the pixel circuit may use polysilicon transistors 210, or may use oxide transistors 230, or may use polysilicon transistors 210 and oxide transistors 230. The active layer 240 of the polysilicon transistor 210 uses low-temperature polysilicon material (LTPS), and the active layer of the oxide transistor 230 uses oxide semiconductor material (Oxide). The polysilicon transistor 210 has advantages such as high mobility and fast charging, and the oxide transistor 230 has advantages such as low leakage current. Integrating the polysilicon transistor 210 and the oxide transistor 230 on a display substrate, i.e., an LTPS+Oxide (LTPO for short) display substrate, can take advantage of the advantages of both, achieve low-frequency driving, reduce power consumption, and improve display quality.

[0120] In some examples, the light-emitting element may be any one of a light-emitting diode (LED), an organic light-emitting diode (OLED), a quantum dot light-emitting diode (QLED), a micro-LED (including mini-LED or micro-LED), etc. For example, the light-emitting element may be an OLED, and the light-emitting element may emit red light, green light, blue light, or white light, etc. when driven by its corresponding pixel circuit. The color of the light emitted by the light-emitting element may be determined as needed. In some examples, the light-emitting element may include: an anode, a cathode, and an organic light-emitting layer located between the anode and the cathode. The anode of the light-emitting element may be electrically connected to the corresponding pixel circuit. However, this embodiment is not limited to this.

[0121] In some examples, the shape of the light-emitting element can be a rectangle, a rhombus, a pentagon, a hexagon, or other irregular shapes. The light-emitting elements of the four sub-pixels of a pixel unit can be arranged horizontally, vertically, or in a square. However, this embodiment is not limited to this. In other examples, a pixel unit can include three sub-pixels, and the light-emitting elements of the three sub-pixels can be arranged horizontally, vertically, or in a herringbone pattern.

[0122] In one embodiment, referring to Figures 1 and 2, the display substrate further includes a plurality of second sub-pixels located in the second display area A3, the second sub-pixels include a second light-emitting element 22 and a second pixel circuit 12, and the second pixel circuit 12 is configured to drive the second light-emitting element 22 to emit light; the second pixel circuit 12 includes a plurality of transistors, and the plurality of transistors of the second pixel circuit 12 include oxide transistors 230 and / or polysilicon transistors 210.

[0123] The second display area A3 and the first display area A1 cooperate to display screen images. This application does not limit the second pixel circuit 12 to an oxide transistor 230 or a polysilicon transistor 210. Therefore, as long as it can perform light-emitting display and has a second sub-pixel, it should be within the protection scope of this application.

[0124] In one embodiment, referring to Figures 1 and 2, it also includes a transition display area A2, which is located between at least one first display area A1 and a second display area A3, and the transition display area A2 surrounds at least one first display area A1; the display substrate also includes a plurality of third sub-pixels located in the transition display area A2, the third sub-pixels include a third light-emitting element 23 and a third pixel circuit 13, and the third pixel circuit 13 is configured to drive the third light-emitting element 23 to emit light; the display panel includes a power line ELVDD, a first initialization signal line Vinit, a second initialization signal line Vinit, a data line Data(m), a gate line Scan(n), a light-emitting control signal line EM(n) and a reset control signal line Scan(n-1) connected to the third pixel circuit 13, the power line ELVDD, the first initialization signal line Vinit, the second initialization signal line Vinit, the data line Data(m), the gate line Scan(n), the light-emitting control signal line EM(n) and the reset control signal line Scan(n-1) are metal wires, and the third pixel circuit 13 uses the same transistor as the first pixel circuit 11.

[0125] Because the resistance of metal wires is lower than that of transparent wires, the power line ELVDD, the first initialization signal line Vinit, the second initialization signal line Vinit, the data line Data(m), the gate line Scan(n), the light emitting control signal line EM(n) and the reset control signal line Scan(n-1) connected to the third pixel circuit 13 are set as metal wires to minimize resistance.

[0126] The circuit layer 200 is generally driven by an external GOA (Gate Driver on Array). If the third pixel circuit 13 and the first pixel circuit 11 use the same type of transistors, they can be driven by the same type of GOA. Compared with transistors of different types, their arrangement is simpler. It should be noted that the transistors of the same type here can be oxide transistors 230 or polysilicon transistors 210.

[0127] In one embodiment, the pixel density of the plurality of second sub-pixels is greater than the pixel density of the plurality of first sub-pixels, and the pixel density of the plurality of second sub-pixels is greater than the pixel density of the plurality of third sub-pixels; or the pixel density of the plurality of second sub-pixels is greater than the pixel density of the plurality of third sub-pixels, and the pixel density of the plurality of third sub-pixels is greater than the pixel density of the plurality of first sub-pixels.

[0128] It is known that the greater the density of pixels, the lower their light transmittance. Therefore, in this embodiment, the density of the first sub-pixel is set to be smaller than the density of the second sub-pixel, which can further increase the light transmittance of the first display area A1.

[0129] And the pixel density is arranged so that the pixel density of the second sub-pixel is greater than the pixel density of the third sub-pixel and greater than the pixel density of the first sub-pixel, so that the pixel density can change according to the gradient and transition smoothly, thereby preventing the display boundaries of several areas from occurring.

[0130] Furthermore, the transmittance of the second display area A3 is lower than that of the transitional display area A2, and the transmittance of the transitional display area A2 is lower than that of at least one first display area A1. Setting the transmittance of the first display area A1, transitional display area A2, and second display area A3 in a gradient ensures continuity in the changes in transmittance. Furthermore, because the transitional display area surrounds the first display area A1, some light from the transitional display area enters the first display area A1, allowing the optical sensor beneath the first display area A1 to collect more optical information.

[0131] In one embodiment, the number of first display areas A1 is 2 or 3. In actual use scenarios, if two or three first display areas A1 are provided, two or three optical sensors can be deployed correspondingly. For example, distance sensors, cameras, and infrared sensors can be deployed to achieve more accurate facial recognition.

[0132] Referring to FIG5 , the present application further proposes a display device 91 comprising a display substrate 910, which is the display substrate shown in the above embodiment; the display device 91 further comprises at least one optical sensor, and at least one first display area A1 is provided in a one-to-one correspondence with the at least one optical sensor. In some examples, the display substrate 910 may be a flexible OLED display substrate, a QLED display substrate, a Micro-LED display substrate, or a Mini-LED display substrate. The display device 91 may be a product having an image display function (including static images or dynamic images, wherein the dynamic image may be a video). For example, the display device 91 may be any of the following products: a display, a television, a billboard, a digital photo frame, a laser printer with a display function, a telephone, a mobile phone, a picture screen, a personal digital assistant (PDA), a digital camera, a portable camcorder, a viewfinder, a navigator, a vehicle, a large-area wall, an information query device (such as a business query device for e-government, banks, hospitals, power departments, etc.), a monitor, etc. For another example, the display device 91 may be any of the following products: a microdisplay, a VR device or an AR device containing a microdisplay, etc.

[0133] In some examples, as shown in FIG6 , which is a partial cross-sectional schematic diagram of a display device, the display device may include three optical sensors 920a, 920b, and 920c. The three first-type display areas may correspond to the three optical sensors one-to-one. The orthographic projection of the optical sensor 920a on the display substrate 910 may overlap with the first-type display area A11, the orthographic projection of the optical sensor 920b on the display substrate 910 may overlap with the second-type display area A12, and the orthographic projection of the optical sensor 920c on the display substrate 910 may overlap with the third-type display area A13.

[0134] Optical sensors include ambient light sensors, distance sensors, camera sensors, infrared light projectors, infrared sensors, etc. An optical sensor can be one of these sensors to achieve a single function, or a combination of multiple sensors to achieve multiple functions.

[0135] For example, the optical sensor 920a may be a camera, the optical sensor 920b may be an infrared transmitter, and the optical sensor 910c may be an infrared receiver. The infrared transmitter and the infrared receiver are used together to perform infrared recognition, such as face recognition. The light transmittance of the first type display area A11 corresponding to the optical sensor 920a may be greater than the light transmittance of the second type display areas A12 and A13, thereby realizing the under-screen photo and video functions. The infrared light transmittance of the second type display areas A12 and A13 may be greater than the visible light transmittance, thereby realizing the emission and reception of infrared light, such as face recognition. However, this embodiment is not limited to this. In other examples, the three optical sensors 920a, 920b and 920c may all be cameras, and the light transmittances of the first type display area A11 and the second type display areas A12 and A13 may be the same or different. In other examples, the three optical sensors 920a, 920b, and 920c can all be sensors, such as infrared sensors, and the infrared light transmittance of the first-type display area A11 and the second-type display areas A12 and A13 can be greater than the visible light transmittance. In other examples, the three optical sensors can be other types of sensors, such as a distance sensor or an ambient light sensor.

[0136] In this application, the structural embodiments and the method embodiments may complement each other if they do not conflict.

[0137] The above description is intended to be illustrative and not restrictive. For example, the above examples (or one or more schemes thereof) can be used in combination with each other. For example, a person of ordinary skill in the art may use other embodiments when reading the above description. In addition, in the above-mentioned specific embodiments, various features can be grouped together to simplify the present disclosure. This should not be interpreted as an intention that a disclosed feature that is not required to be protected is necessary for any claim. On the contrary, the subject matter of the present disclosure may be less than all the features of a specific disclosed embodiment. Thus, the following claims are incorporated into the specific embodiments as examples or embodiments, wherein each claim is independently a separate embodiment, and it is considered that these embodiments can be combined with each other in various combinations or arrangements. The scope of the present disclosure should be determined with reference to the appended claims and the full scope of equivalents to which these claims are entitled.

[0138] In this application, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance. The terms "plurality" and "several" refer to two or more, unless otherwise clearly defined.

[0139] Other embodiments of the present invention will readily occur to those skilled in the art after considering the specification and practicing the application herein. This application is intended to cover any variations, uses, or adaptations of the present invention that fall within the general scope of this application and include common knowledge or customary techniques in the art that are not claimed herein. The description and examples are to be considered as exemplary only, and the true scope and spirit of the present invention are indicated by the following claims.

[0140] It should be understood that the present application is not limited to the exact structures described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present application is limited only by the appended claims.

Claims

1. A display substrate, characterized in that: include: At least one first display area, and a second display area located at at least one side of the at least one first display area; the light transmittance of the second display area is less than the light transmittance of the at least one first display area; a plurality of first sub-pixels, located in the at least one first display area, the first sub-pixels comprising a first light-emitting element and a first pixel circuit, the first pixel circuit being configured to drive the first light-emitting element to emit light; The first pixel circuit includes a plurality of transistors, and at least one transistor among the plurality of transistors is an oxide transistor.

2. The display substrate according to claim 1, wherein: The plurality of transistors are oxide transistors and do not include polysilicon transistors.

3. The display substrate according to claim 1, wherein: The plurality of transistors include oxide transistors and polysilicon transistors, and the number of the polysilicon transistors is greater than the number of the oxide transistors.

4. The display substrate according to claim 1, wherein: The first pixel circuit includes a driving transistor, and the driving transistor is a polysilicon transistor.

5. The display substrate according to claim 4, wherein: The length of the driving transistor channel is greater than or equal to 20 um and less than or equal to 40 um.

6. The display substrate according to claim 1, wherein: The first pixel circuit includes a first circuit transistor, a second circuit transistor and a third circuit transistor, the first electrode of the first circuit transistor is connected to the gate of the third circuit transistor and the second electrode of the second circuit transistor, the first electrode of the second circuit transistor is connected to the second electrode of the third circuit transistor, and the third circuit transistor is a driving transistor.

7. The display substrate according to claim 6, wherein: The first circuit transistor and the second circuit transistor are oxide transistors.

8. The display substrate according to claim 6, wherein: The first pixel circuit further includes a power line, a first initialization signal line, a second initialization signal line and a data line; The first pixel circuit includes a storage capacitor, a fourth circuit transistor, a fifth circuit transistor, a sixth circuit transistor and a seventh circuit transistor, the first level of the first circuit transistor is connected to the first electrode plate of the storage capacitor, the second electrode of the first circuit transistor is connected to the first initialization signal line, the power line is connected to the second electrode plate of the storage capacitor and the first electrode of the fifth circuit transistor, the second electrode of the fifth circuit transistor is connected to the first electrode of the third circuit transistor and the second electrode of the fourth circuit transistor, the first electrode of the fourth circuit transistor is connected to the data line, the first level of the second circuit transistor is connected to the first electrode of the sixth circuit transistor, the second electrode of the sixth circuit transistor is connected to the second electrode of the seventh circuit transistor, and the first electrode of the seventh circuit transistor is connected to the second initialization signal line.

9. The display substrate according to claim 8, wherein: The third circuit transistor is a polysilicon transistor, and the first circuit transistor, the second circuit transistor, the fourth circuit transistor, the fifth circuit transistor, the sixth circuit transistor and the seventh circuit transistor are all oxide transistors.

10. The display substrate according to claim 9, wherein: The third circuit transistor comprises an active layer, a gate located at one side of the active layer, a first stage of the third circuit transistor and a second electrode of the third circuit transistor located at a side of the gate away from the active layer, and the first stage of the third circuit transistor and the second electrode of the third circuit transistor are connected to the active layer; The display substrate further includes a first light shielding layer, which is located on a side of the active layer away from the gate and an orthographic projection of the third circuit transistor on the display substrate is located within the orthographic projection of the first light shielding layer on the display substrate.

11. The display substrate according to claim 9, wherein: The first light emitting element comprises an anode, a light emitting layer and a cathode which are sequentially arranged away from the first pixel circuit; The orthographic projection of the third circuit transistor on the display substrate is located within the orthographic projection of the anode on the display substrate.

12. The display substrate according to claim 8, wherein: The display substrate includes a second light shielding layer, and the orthographic projections of the first circuit transistor, the second circuit transistor, the fourth circuit transistor, the fifth circuit transistor, the sixth circuit transistor and the seventh circuit transistor on the display substrate are located within the orthographic projection of the second light shielding layer on the display substrate.

13. The display substrate according to claim 8, wherein: The first electrode and the second electrode of the storage capacitor are both made of transparent conductive material.

14. The display substrate according to claim 8, wherein: The display substrate also includes a gate line, a light-emitting control signal line and a reset control signal line, the gate line is connected to the gate of the second circuit transistor and the gate of the fourth circuit transistor; the light-emitting control signal line is connected to the gate of the fifth circuit transistor and the gate of the sixth circuit transistor; the reset control signal line is connected to the gate of the first circuit transistor and the gate of the seventh circuit transistor.

15. The display substrate according to claim 14, wherein: At least one of the power line, the first initialization signal line, the second initialization signal line, the data line, the gate line, the light emitting control signal line, and the reset control signal line is made of a transparent conductive material.

16. The display substrate according to claim 15, wherein: The power line, the first initialization signal line, the second initialization signal line, the data line, the gate line, the light emitting control signal line and the reset control signal line are all made of transparent conductive materials.

17. The display substrate according to claim 14, wherein: The first light emitting element comprises an anode, a light emitting layer and a cathode which are sequentially arranged away from the first pixel circuit; At least some of the line segments among the power line, the first initialization signal line, the second initialization signal line, the data line, the gate line, the light-emitting control signal line and the reset control signal line overlap with the orthographic projection of the anode on the display substrate, and at least some of the line segments overlapping with the anode are made of metal material, and the remaining line segments are made of transparent conductive material.

18. The display substrate according to any one of claims 1 to 17, characterized in that: The display substrate further includes a plurality of second sub-pixels located in the second display area, the second sub-pixels including a second light-emitting element and a second pixel circuit, and the second pixel circuit is configured to drive the second light-emitting element to emit light; The second pixel circuit includes a plurality of transistors, and the plurality of transistors of the second pixel circuit include oxide transistors and / or polysilicon transistors.

19. The display substrate according to claim 18, wherein: Also comprising a transitional display area, the transitional display area is located between the at least one first display area and the second display area, and the transitional display area surrounds the at least one first display area; The display substrate further comprises a plurality of third sub-pixels located in the transition display area, wherein the third sub-pixels comprise a third light-emitting element and a third pixel circuit, wherein the third pixel circuit is configured to drive the third light-emitting element to emit light; The third pixel circuit includes a power line, a first initialization signal line, a second initialization signal line, a data line, a gate line, a light-emitting control signal line and a reset control signal line. The power line, the first initialization signal line, the second initialization signal line, the data line, the gate line, the light-emitting control signal line and the reset control signal line located in the third pixel circuit are metal wires, and the third pixel circuit uses the same transistor as the first pixel circuit.

20. The display substrate according to claim 19, wherein: The pixel density of the second sub-pixels is greater than the pixel density of the first sub-pixels, and the pixel density of the second sub-pixels is greater than the pixel density of the third sub-pixels; or A pixel density of the second sub-pixels is greater than a pixel density of the third sub-pixels, and a pixel density of the third sub-pixels is greater than a pixel density of the second sub-pixels.

21. The display substrate according to claim 19, wherein: The number of the first display areas is 2 or 3.

22. The display substrate according to claim 19, wherein: The light transmittance of the second display area is lower than the light transmittance of the transition display area, and the light transmittance of the transition display area is lower than the light transmittance of the at least one first display area.

23. A display device, characterized in that: A display substrate comprising a display substrate as claimed in any one of claims 1 to 22; The display device further includes at least one optical sensor, and the at least one first display area is arranged in a one-to-one correspondence with the at least one optical sensor.

24. The display device according to claim 23, characterized in that The optical sensor is one or more of an ambient light sensor, a distance sensor, a camera sensor, and an infrared sensor.

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