Heat-sealable polyimide adhesive film and method for manufacturing same

Abstract

Disclosed are: a heat-sealable polyimide adhesive film that has a low glass transition temperature of 30-70 °C, can be imparted with a release force to achieve a target adhesiveness, and can prevent residue from remaining on the surface of a lead frame during de-taping in a semiconductor process; and a method for manufacturing same. The method for manufacturing a heat-sealable polyimide adhesive film according to the present invention is characterized by comprising: (a) a step for dissolving an aromatic diamine in a first organic solvent, then adding siloxane diamine and a second organic solvent, adding aromatic dianhydride and alkoxysilane, then adding aromatic dianhydride and alkoxysilane, and then reacting at 0-60 °C for 1-3 days to form a polyamic acid composition; and (b) a step for coating the polyamic acid composition onto a polyimide substrate film and curing the polyamic acid composition through a heat treatment to form a heat-sealable polyimide adhesive layer.

Description

Heat-sealing polyimide adhesive film and its manufacturing method

[0001] The present invention relates to a heat-sealing polyimide adhesive film and a method for manufacturing the same, and more particularly, to a heat-sealing polyimide adhesive film and a method for manufacturing the same, which can secure a low glass transition temperature of 30 to 100°C and, at the same time, can implement target adhesiveness by imparting a release force, while preventing residue from remaining on the surface of a lead frame or glass during de-taping during a semiconductor packaging process.

[0002]

[0003] Polyimide films are widely used in the fields of electrical and electronic materials, space, aviation, and telecommunications due to their excellent mechanical and thermal dimensional stability and chemical stability.

[0004] These polyimide films are widely used as base films for flexible circuit board materials with fine patterns, such as TAB (Tape Automated Bonding) and COF (Chip On Film), due to the thinness and miniaturization of components.

[0005] Additionally, a package structure is being developed that encapsulates only one side of the semiconductor package, leaving the exposed lead frame on the other side for external connection. Semiconductor packages with this structure offer the advantage of being lightweight and compact, as the lead frame does not protrude from the encapsulating resin. However, there is a risk of defects occurring during the encapsulation process, such as the encapsulating resin penetrating the other side of the lead frame.

[0006] Accordingly, an attempt is being made to prevent the problem of the encapsulation resin penetrating into the other surface of the lead frame by attaching a polyimide adhesive film to the lead frame before performing the encapsulation process of the semiconductor package, performing the encapsulation process, and then peeling off the polyimide adhesive film after the encapsulation process of the semiconductor package.

[0007]

[0008] In general, a polyimide adhesive film is composed of a laminated structure of a polyimide base film and a thermoplastic polyimide layer disposed on the polyimide base film and attached to a lead frame.

[0009] At this time, the sealing process performed after attaching a polyimide adhesive film to the other side of the lead frame is performed at a relatively high temperature. During the sealing process, a problem may occur in which the thermoplastic polyimide layer is peeled off from the polyimide base film or the thermoplastic polyimide layer is modified and is not easily peeled off from the lead frame after the sealing process.

[0010] Additionally, polyimide adhesive films can be used as carrier films for TSV (Through Silicon Via) packaging processes. The polyimide adhesive film is attached to carrier glass, and after the packaging process, it can be peeled off using an LLO (Laser lift-off) process that irradiates the carrier glass surface with a laser.

[0011] A related prior art document is Republic of Korea Patent Publication No. 10-2020-0080799 (published on July 7, 2020), which describes a non-conductive adhesive film for a semiconductor package and a method for manufacturing a semiconductor package using the same.

[0012]

[0013] The purpose of the present invention is to provide a heat-sealed polyimide adhesive film and a method for manufacturing the same, which can secure a low glass transition temperature of 30 to 100°C and can implement target adhesiveness by imparting release force, while preventing residue from remaining on the surface of a lead frame or glass during de-taping during a semiconductor packaging process.

[0014]

[0015] A method for manufacturing a heat-sealing polyimide adhesive film according to an embodiment of the present invention for achieving the above object is characterized by comprising the steps of (a) dissolving an aromatic diamine in a first organic solvent, adding a siloxane diamine and a second organic solvent, adding an aromatic dianhydride and an alkoxy silane, and reacting the mixture at 0 to 60°C for 1 to 3 days to form a polyamic acid composition; and (b) coating the polyamic acid composition on a polyimide base film and curing it by heat treatment to form a heat-sealing polyimide adhesive layer.

[0016] The above aromatic diamines are 3,3'-dimethyl-[1,1'-biphenyl]-4,4'-diamine, 4,4'-oxydiamiline (ODA), 3,4-oxydiamiline (3,4-ODA), 2,2'-bis[4-(4-aminophenoxy)phenyl]propane (2,2'-Bis[4-(4-aminophenoxy)phenyl]propane: BAPP), 1,4-bis(4-aminophenoxy)benzene (1,4-Bis(4-aminophenoxy)benzene: TPE-Q), 1,3-bis(4-aminophenoxy)benzene (1,3-Bis(4-aminophenoxy)benzene: TPE-R), bis(3-aminophenyl)sulfone (Bis(3-aminopheyl)sulfone: 3-SDA), Bis(4-aminophenyl)sulfone (4-SDA), Trimethylenebis(4-aminobenzoate) (TMAB), 1,5-diaminonaphthalene (1,5-DAN), Bis[4-(3-aminophenoxy)phenyl]sulfone (m-BAPS), 4-(4-aminophenoxy)phenyl]sulfone (p-BAPS), 2,5-dimethyl-1,4-phenylenediamine (2,5-dimethyl-1,4-phenylenediamine: DMPDA), 2,2'-dimethylbenzidine (m-Tolidine), 3,3'-dimethylbenzidine (3,3'-Dimethylbenzidine: o-Tolidine), 4-Aminophenyl-4-amino Benzoate (APAB), Bis(4-aminophenyl)terephthalate (BPTP), 3,3'-diamino-4,4'-dihydroxybiphenyl (3,3'-diamino-4,4'-dihydroxybiphenyl (HAB), 1,3-phenylenediamine (MPDA), 3,5-diaminobenzoic acid (DABA), 4,4'-diamino-(1,1'-biphenyl)-2,2'-dicarboxylic acid (4,4-APC), m-Xylylenediamine (MXDA), 4,4'-diaminobenzanilide (DABA), 4,4'-bis(4-aminophenoxy)benzophenone (4BABP), Containing at least one of 4,4'-bis(4-aminophenoxy)biphenyl (BAPB), 2,2'-bis(trifluoromethyl)benzidine (TFMB), 2,2-bis[4-(4-aminophenoxy)phenyl]propane (HFBAPP), 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl ether (6FODA), 2,2'-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (6FAP), and the aromatic dianhydride 3,3', 4,4'-benzophenonetetracarbolxylic dianhydride, pyromellitic dianhydride (PMDA), 4,4'-(4,4'-isopropylidindiphenoxy)diphthalic anhydride (4,4'-(4,4'-Isopropylidenediphenoxy)diphthalic anhydride: BPADA), 4,4'-(hexafluoroisopropylidine)diphthalic anhydride: 6FDA), 4,4'-oxydiphthalic anhydride: ODPA), 3,3',4,4'-benzophenonetetracarboxylic dianhydride: BTDA), ethylene glycol bis(4-trimellitate anhydride): TMEG), 4,4'-sulfonyldiphthalic anhydride: DSDA, Contains at least one type of naphthalene-2,3,6,7-tetracarboxylic acid (2,3,6,7-NTDA).

[0017] The above siloxane diamine comprises bis(γ-aminopropyl)polydimethyldisiloxane, and the bis(γ-aminopropyl)polydimethyldisiloxane has a weight average molecular weight (Mw) of 500 to 1,200.

[0018] The above alkoxy silane includes at least one of TEOS (Tetraethoxysilane), TMOS (Tetramethoxysilane), PTMOS (Phenyltrimethoxysilane), and MTMOS (Methyltrimethoxysilane).

[0019] The above heat treatment is performed at 100 to 300°C for 10 to 180 minutes, and the above heat treatment is performed by gradually increasing the temperature through multi-stage heat treatment.

[0020] If necessary, after the step (b), the step (c) further includes forming a release layer on the heat-sealed polyimide adhesive layer.

[0021]

[0022] In order to achieve the above object, a heat-sealing polyimide adhesive film according to an embodiment of the present invention comprises: a polyimide base film; a heat-sealing polyimide adhesive layer laminated on the polyimide base film; and a release layer laminated on the heat-sealing polyimide adhesive layer; wherein the heat-sealing polyimide adhesive layer comprises an aromatic diamine, a siloxane diamine, an aromatic dianhydride, and an alkoxy silane, wherein the siloxane diamine comprises bis(γ-aminopropyl)polydimethyldisiloxane, and the bis(γ-aminopropyl)polydimethyldisiloxane is characterized in that it has a weight average molecular weight (Mw) of 500 to 1,200.

[0023] The above polyimide base film has a thickness of 10 to 100 μm, and the above heat-sealing polyimide adhesive layer has a thickness of 2 to 10 μm.

[0024] The above heat-sealing polyimide adhesive layer has a glass transition temperature (Tg) of 30 to 100°C.

[0025] The above heat-sealed polyimide adhesive film is attached to a lead frame under lamination conditions of 100°C or less.

[0026] It is preferable that the above heat-sealed polyimide adhesive film has an initial adhesive strength of 5 to 10 gf / cm after laminating to a lead frame (SUS), an adhesive strength of 150 to 200 gf / cm after wire bonding, and an adhesive strength of 150 to 200 gf / cm after the sealing process.

[0027] Additionally, the above-described heat-sealed polyimide adhesive film can be used as a carrier film for a TSV (Through Silicon Via) packaging process. The heat-sealed polyimide adhesive film is attached to a carrier glass, and after the packaging process, it can be peeled off using an LLO process in which a laser is irradiated on the carrier film surface. The initial adhesive strength after laminating to the glass is preferably 2 to 10 gf / cm, and the adhesive strength after heat treatment at 250°C for 1 hour during the packaging process is preferably 100 to 200 gf / cm.

[0028]

[0029] The heat-sealing polyimide adhesive film and the method for manufacturing the same according to the present invention secure a glass transition temperature (Tg) of 30 to 100°C by controlling the content ratio between an aromatic diamine and a low-molecular-weight siloxane diamine (PSX) having a weight-average molecular weight of 500 to 1,200 Mw, and, in addition, implements target adhesiveness by imparting release force through application of an alkoxy silane, and prevents residue from remaining on the surface of a lead frame or glass during de-taping during a semiconductor packaging process.

[0030] As a result, the heat-sealing polyimide adhesive film according to the present invention and the method for manufacturing the same can not only be attached to a lead frame under lamination conditions of 100°C or less during a semiconductor packaging process, but can also have an initial adhesive strength of 5 to 10 gf / cm after laminating to the lead frame, an adhesive strength of 150 to 200 gf / cm after wire bonding, and an adhesive strength of 150 to 200 gf / cm after the sealing process, and an initial adhesive strength of 2 to 10 gf / cm after laminating to glass, and an adhesive strength of 100 to 200 gf / cm after heat treatment.

[0031]

[0032] Figures 1 to 4 are cross-sectional views illustrating a process for manufacturing a semiconductor package according to an embodiment of the present invention.

[0033] FIG. 5 is a process cross-sectional view illustrating a manufacturing process of a TSV package according to an embodiment of the present invention.

[0034] Fig. 6 is a cross-sectional view showing a heat-sealed polyimide adhesive film according to an embodiment of the present invention.

[0035] Figure 7 is a process flow diagram showing a method for manufacturing a heat-sealed polyimide adhesive film according to an embodiment of the present invention.

[0036]

[0037] The advantages and features of the present invention, and the methods for achieving them, will become clearer with reference to the embodiments described in detail below together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms. These embodiments are provided only to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Like reference numerals designate like elements throughout the specification.

[0038] Hereinafter, with reference to the attached drawings, a heat-sealed polyimide adhesive film and a manufacturing method thereof according to a preferred embodiment of the present invention will be described in detail.

[0039] Figures 1 to 4 are process cross-sectional views for explaining a manufacturing process of a semiconductor package according to an embodiment of the present invention.

[0040] As shown in Fig. 1, a heat-sealed polyimide adhesive film (100) is attached to the other surface of the lead frame (210) through lamination, and then a die attach process is performed to attach a semiconductor chip (220) to the upper surface of the lead frame (210).

[0041]

[0042] Next, as illustrated in Fig. 2, a wire bonding process is performed to electrically connect the lead frame (210) and the semiconductor chip (220) by bonding them with a metal wire (230). This wire bonding process can be performed at a temperature of approximately 180 to 240°C.

[0043]

[0044] Next, as shown in Fig. 3, a sealing process is performed to cover and seal the upper surface of the lead frame (210) and the semiconductor chip (220) with a sealing member (240).

[0045] This sealing member (240) is formed to protect the semiconductor chip (220) from the external environment. For example, an epoxy molding compound (EMC) may be used as the sealing member (240). This sealing process may be performed at approximately 160 to 200°C.

[0046]

[0047] Next, as shown in FIG. 4, a de-taping process is performed to remove the heat-sealed polyimide adhesive film (100 in FIG. 3) attached to the other surface of the lead frame (210) from the lead frame (210).

[0048] By the above process, a semiconductor package (200) according to an embodiment of the present invention can be manufactured.

[0049]

[0050] In the manufacturing process of the semiconductor package described above, a heat-melting polyimide adhesive film (100) is attached to the other surface of the lead frame (210) to prevent the flow of the liquid epoxy molding compound. This heat-melting polyimide adhesive film (100) is a tape attached before the die attach process, and thus, heat resistance must be ensured.

[0051] In addition, the heat-melting polyimide adhesive film (100) needs to secure heat resistance and adhesiveness in each process such as the die attach process, wire bonding process, and sealing process, and needs to be removed without residue during de-taping.

[0052] Additionally, FIG. 5 is a process cross-sectional view for explaining a manufacturing process of a TSV package according to an embodiment of the present invention.

[0053] As illustrated in FIG. 5, a process for manufacturing a TSV package (300) (Through Silicon Via Package) can be completed by attaching a carrier glass (340) to a heat-sealed polyimide adhesive film (100), attaching a silicon die (320, Si die) to a thick adhesive layer (310) on the opposite side, performing a packaging process, and then peeling off the carrier glass (340) by irradiating a laser on the surface of the carrier glass (340) through an LLO process, and then removing the heat-sealed polyimide adhesive film (100) from the silicon die (320). Here, the heat-sealed polyimide adhesive film (100) can include a polyimide base film (120) and a heat-sealed polyimide adhesive layer (140).

[0054] In this way, the heat-sealed polyimide adhesive film (100) can be used as a carrier film for the TSV packaging process. That is, the heat-sealed polyimide adhesive film (100) is attached to the carrier glass (340), and after the packaging process is performed, it can be peeled off using the LLO process of irradiating the surface of the carrier glass (340) with a laser. It is preferable that the initial adhesive strength after laminating to the glass is 2 to 10 gf / cm, and that the adhesive strength after heat treatment at 250°C for 1 hour during the packaging process is 100 to 200 gf / cm.

[0055]

[0056] To this end, the heat-sealing polyimide adhesive film according to an embodiment of the present invention secures a glass transition temperature (Tg) of 30 to 100°C by controlling the content ratio between aromatic diamine and low-molecular-weight siloxane diamine (PSX) having a weight-average molecular weight of 500 to 1,200 Mw, and, in addition, enables the implementation of target adhesive force by imparting release force through the application of alkoxy silane, while preventing residue from remaining on the surface of a lead frame or glass during de-taping during a semiconductor packaging process.

[0057] This will be explained in more detail with reference to the attached drawings below.

[0058] Fig. 6 is a cross-sectional view showing a heat-sealed polyimide adhesive film according to an embodiment of the present invention.

[0059] As illustrated in FIG. 6, a heat-sealing polyimide adhesive film (100) according to an embodiment of the present invention includes a polyimide base film (120) and a heat-sealing polyimide adhesive layer (140), and may further include a release layer (160) if necessary.

[0060] The polyimide base film (120) is preferably made of a highly heat-resistant material to prevent degeneration at high temperatures applied during the semiconductor package manufacturing process. For this purpose, the polyimide base film (120) preferably uses polyimide.

[0061] It is preferable that this polyimide base film (120) have a thickness of 10 to 100 μm.

[0062]

[0063] A heat-sealing polyimide adhesive layer (140) is laminated on a polyimide base film (120).

[0064] It is preferable that the heat-sealing polyimide pressure-sensitive adhesive layer (140) have a thickness of 2 to 10 μm. If the thickness of the heat-sealing polyimide pressure-sensitive adhesive layer (140) is less than 2 μm, there is a risk of reduced adhesive strength. Conversely, if the thickness of the heat-sealing polyimide pressure-sensitive adhesive layer (140) exceeds 10 μm, there is a risk of curling due to a difference in coefficient of thermal expansion (CTE).

[0065] The heat-sealing polyimide adhesive layer (140) includes aromatic diamine, siloxane diamine, aromatic dianhydride, and alkoxy silane.

[0066] Here, the aromatic diamines are 3,3'-dimethyl-[1,1'-biphenyl]-4,4'-diamine, 4,4'-oxydiamiline (ODA), 3,4-oxydiamiline (3,4-ODA), 2,2'-bis[4-(4-aminophenoxy)phenyl]propane (2,2'-Bis[4-(4-aminophenoxy)phenyl]propane: BAPP), 1,4-bis(4-aminophenoxy)benzene (1,4-Bis(4-aminophenoxy)benzene: TPE-Q), 1,3-bis(4-aminophenoxy)benzene (1,3-Bis(4-aminophenoxy)benzene: TPE-R), bis(3-aminophenyl)sulfone (Bis(3-aminopheyl)sulfone: 3-SDA), Bis(4-aminophenyl)sulfone (4-SDA), Trimethylenebis(4-aminobenzoate) (TMAB), 1,5-diaminonaphthalene (1,5-DAN), Bis[4-(3-aminophenoxy)phenyl]sulfone (m-BAPS), 4-(4-aminophenoxy)phenyl]sulfone (p-BAPS), 2,5-dimethyl-1,4-phenylenediamine (2,5-dimethyl-1,4-phenylenediamine: DMPDA), 2,2'-dimethylbenzidine (m-Tolidine), 3,3'-dimethylbenzidine (3,3'-Dimethylbenzidine: o-Tolidine), 4-Aminophenyl-4-amino Benzoate (APAB), Bis(4-aminophenyl)terephthalate (BPTP), 3,3'-diamino-4,4'-dihydroxybiphenyl (3,3'-diamino-4,4'-dihydroxybiphenyl (HAB), 1,3-phenylenediamine (MPDA), 3,5-diaminobenzoic acid (DABA), 4,4'-diamino-(1,1'-biphenyl)-2,2'-dicarboxylic acid (4,4-APC), m-Xylylenediamine (MXDA), 4,4'-diaminobenzanilide (DABA), 4,4'-bis(4-aminophenoxy)benzophenone (4BABP), Contains at least one of 4,4'-bis(4-aminophenoxy)biphenyl (4,4'-Bis(4-aminophenoxy)biphenyl: BAPB), 2,2'-bis(trifluoromethyl)benzidine (2,2'-Bis(trifluoromethyl)benzidine: TFMB), 2,2-bis[4-(4-aminophenoxy)phenyl]propane (2,2-Bis[4-(4-aminophenoxy)phenyl]propane: HFBAPP), 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl ether (2,2'-Bis(trifluoromethyl)-4,4'-diaminobiphenyl ether: 6FODA), and 2,2'-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (2,2'-Bis(3-amino-4-hydroxyphenyl)hexafluoropropane: 6FAP).

[0067] These aromatic diamines can be added at 20 to 70 mol% with respect to the aromatic dianhydride.

[0068]

[0069] Aromatic dianhydrides include 3,3', 4,4'-benzophenonetetracarbolxylic dianhydride, pyromellitic dianhydride (PMDA), 4,4'-(4,4'-isopropylidenediphenoxy)diphthalic anhydride (BPADA), 4,4'-(Hexafluoroisopropylidene)diphthalic anhydride (6FDA), 4,4'-oxydiphthalic anhydride (ODPA), Contains at least one of 3,3',4,4'-benzophenonetetracarboxylic dianhydride (BTDA), ethylene glycol bis(4-trimellitate anhydride) {(Ethylene glycol bis(4-trimellitate anhydride) : TMEG), 4,4'-sulfonyldiphthalic anhydride (DSDA), and naphthalene-2,3,6,7-tetracarboxylic acid (2,3,6,7-NTDA).

[0070]

[0071] The alkoxy silane includes at least one of TEOS (Tetraethoxysilane), TMOS (Tetramethoxysilane), PTMOS (Phenyltrimethoxysilane), and MTMOS (Methyltrimethoxysilane). Here, the alkoxy silane is added to impart release properties while maintaining the inherent heat resistance of the film through crosslinking.

[0072] In this way, in the present invention, it is possible to realize the target adhesive strength of the heat-sealed polyimide adhesive film (100) by imparting a release force through the addition of alkoxy silane, and at the same time, it is possible to have a smooth surface without any residue on the lead frame or glass during de-taping during the semiconductor packaging process. To this end, it is preferable that the alkoxy silane be added in an amount of 20 to 60 mol% with respect to the aromatic dianhydride.

[0073]

[0074] Additionally, the siloxane diamine may include bis(γ-aminopropyl)polydimethyldisiloxane (PSX) represented by chemical formula 1.

[0075]

[0076] [Chemical Formula 1]

[0077]

[0078]

[0079] It is preferable to use such bis(γ-aminopropyl)polydimethyldisiloxane having a weight average molecular weight (Mw) of 500 to 1,200. At this time, bis(γ-aminopropyl)polydimethyldisiloxane can be added at 30 to 80 mol% with respect to the aromatic dianhydride.

[0080]

[0081] In this way, in the present invention, by using low molecular weight bis(γ-aminopropyl)polydimethyldisiloxane having a weight average molecular weight (Mw) of 500 to 1,200 as a siloxane diamine and controlling the content ratio between the aromatic diamine and the siloxane diamine, the glass transition temperature can be significantly lowered to 30 to 100°C.

[0082]

[0083] If necessary, a release layer (160) is laminated on the heat-melting polyimide adhesive layer (140). This release layer (160) serves to protect the heat-melting polyimide adhesive layer (140).

[0084] When laminating to a lead frame or glass, the release layer (160) is removed from the heat-sealed polyimide adhesive layer (140) and adhesion to the lead frame or glass is achieved through the heat-sealed polyimide adhesive layer (140). The release layer (160) may be formed of one or more resins selected from among polyester-based resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyimide (PI)-based resins, and polyamideimide (PAI)-based resins, but is not limited thereto.

[0085]

[0086] The heat-sealing polyimide adhesive film according to the embodiment of the present invention described above secures a glass transition temperature (Tg) of 30 to 100°C by controlling the content ratio between aromatic diamine (p-PDA) and low-molecular-weight siloxane diamine (PSX) having a weight-average molecular weight of 500 to 1,200 Mw, and, in addition, enables the implementation of target adhesive strength by imparting release force through the application of alkoxy silane, while preventing residue from remaining on the surface of a lead frame or glass during de-taping during a semiconductor package process.

[0087] As a result, the heat-sealing polyimide adhesive film according to an embodiment of the present invention can be attached to a lead frame or glass under lamination conditions of 100°C or less during a semiconductor packaging process, and can have an initial adhesive strength of 5 to 10 gf / cm after laminating to a lead frame, an adhesive strength of 150 to 200 gf / cm after wire bonding, and an adhesive strength of 150 to 200 gf / cm after a sealing process, and an initial adhesive strength of 2 to 10 gf / cm after laminating to glass, and an adhesive strength of 100 to 200 gf / cm after heat treatment.

[0088]

[0089] Hereinafter, a method for manufacturing a heat-sealed polyimide adhesive film according to an embodiment of the present invention will be described with reference to the attached drawings.

[0090] Figure 7 is a process flow diagram showing a method for manufacturing a heat-sealed polyimide adhesive film according to an embodiment of the present invention.

[0091] As illustrated in Fig. 7, a method for manufacturing a heat-sealed polyimide adhesive film according to an embodiment of the present invention includes a polyamic acid forming step (S110) and a heat-sealed polyimide adhesive layer forming step (S120). In addition, the method for manufacturing a heat-sealed polyimide adhesive film according to an embodiment of the present invention may further include a release layer forming step (S130).

[0092]

[0093] Polyamic acid formation

[0094] In the polyamic acid formation step (S110), an aromatic diamine is dissolved in a first organic solvent, then a siloxane diamine and a second organic solvent are added, an aromatic dianhydride and an alkoxy silane are added, and then the mixture is reacted at 0 to 60°C for 1 to 3 days to form a polyamic acid composition.

[0095] In this step, the aromatic diamine may be added in an amount of 20 to 70 mol% relative to the aromatic dianhydride. In addition, it is preferable that the alkoxy silane be added in an amount of 20 to 60 mol% relative to the aromatic dianhydride.

[0096] Aromatic diamines include 3,3'-dimethyl-[1,1'-biphenyl]-4,4'-diamine, 4,4'-oxydiamiline (ODA), 3,4-oxydiamiline (3,4-ODA), 2,2'-bis[4-(4-aminophenoxy)phenyl]propane (2,2'-Bis[4-(4-aminophenoxy)phenyl]propane (BAPP), 1,4-bis(4-aminophenoxy)benzene (TPE-Q), 1,3-bis(4-aminophenoxy)benzene (TPE-R), bis(3-aminophenyl)sulfone (Bis(3-aminopheyl)sulfone: 3-SDA), Bis(4-aminophenyl)sulfone (4-SDA), Trimethylenebis(4-aminobenzoate) (TMAB), 1,5-diaminonaphthalene (1,5-DAN), Bis[4-(3-aminophenoxy)phenyl]sulfone (m-BAPS), 4-(4-aminophenoxy)phenyl]sulfone (p-BAPS), 2,5-dimethyl-1,4-phenylenediamine (2,5-dimethyl-1,4-phenylenediamine: DMPDA), 2,2'-dimethylbenzidine (m-Tolidine), 3,3'-dimethylbenzidine (3,3'-Dimethylbenzidine: o-Tolidine), 4-Aminophenyl-4-amino Benzoate: APAB), Bis(4-aminophenyl)terephthalate: BPTP), 3,3'-diamino-4,4'-dihydroxybiphenyl (3,3'-diamino-4,4'-dihydroxybiphenyl (HAB), 1,3-phenylenediamine (MPDA), 3,5-diaminobenzoic acid (DABA), 4,4'-diamino-(1,1'-biphenyl)-2,2'-dicarboxylic acid (4,4-APC), m-Xylylenediamine (MXDA), 4,4'-diaminobenzanilide (DABA), 4,4'-bis(4-aminophenoxy)benzophenone (4BABP), 4,4'-bis(4-aminophenoxy)biphenyl Contains at least one of (4,4'-Bis(4-aminophenoxy)biphenyl: BAPB), 2,2'-bis(trifluoromethyl)benzidine (2,2'-Bis(trifluoromethyl)benzidine: TFMB), 2,2-bis[4-(4-aminophenoxy)phenyl]propane (2,2-Bis[4-(4-aminophenoxy)phenyl]propane: HFBAPP), 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl ether (2,2'-Bis(trifluoromethyl)-4,4'-diaminobiphenyl ether: 6FODA), 2,2'-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (2,2'-Bis(3-amino-4-hydroxyphenyl)hexafluoropropane: 6FAP).

[0097] In addition, the first organic solvent may be at least one selected from dimethylacetamide (DMAc), NMP (N-methyl-2-pyrrolidone), dimethyl sulfoxide (DMSO), dimethylformamide (DMF), tetrahydrofuran (THF), diethylformamide (DEF), NEP (N-ethyl-2-pyrrolidone), diethylacetamide (DEAc), dimethylpropionamide (DMPA), etc., but is not limited thereto.

[0098] In addition, aromatic dianhydrides include 3,3', 4,4'-benzophenonetetracarbolxylic dianhydride, pyromellitic dianhydride (PMDA), 4,4'-(4,4'-isopropylidenediphenoxy)diphthalic anhydride (BPADA), 4,4'-(Hexafluoroisopropylidene)diphthalic anhydride (6FDA), 4,4'-oxydiphthalic anhydride (ODPA), Contains at least one of 3,3',4,4'-benzophenonetetracarboxylic dianhydride (BTDA), ethylene glycol bis(4-trimellitate anhydride) {(Ethylene glycol bis(4-trimellitate anhydride) : TMEG), 4,4'-sulfonyldiphthalic anhydride (DSDA), and naphthalene-2,3,6,7-tetracarboxylic acid (2,3,6,7-NTDA).

[0099] The alkoxy silane includes at least one of TEOS (Tetraethoxysilane), TMOS (Tetramethoxysilane), PTMOS (Phenyltrimethoxysilane), and MTMOS (Methyltrimethoxysilane). Here, the alkoxy silane is added to impart release properties while maintaining the inherent heat resistance of the film through crosslinking. The alkoxy silane is preferably added in an amount of 20 to 60 mol% with respect to the aromatic dianhydride.

[0100] It is preferable to add the siloxane diamine and the second organic solvent in appropriate amounts using a quantitative pump.

[0101] Here, the siloxane diamine may include bis(γ-aminopropyl)polydimethyldisiloxane represented by chemical formula 1.

[0102]

[0103] [Chemical Formula 1]

[0104]

[0105]

[0106] It is preferable to use such bis(γ-aminopropyl)polydimethyldisiloxane having a weight average molecular weight (Mw) of 500 to 1,200. At this time, bis(γ-aminopropyl)polydimethyldisiloxane can be added at 30 to 80 mol% with respect to the aromatic dianhydride.

[0107] In this way, in the present invention, by using low molecular weight bis(γ-aminopropyl)polydimethyldisiloxane having a weight average molecular weight (Mw) of 500 to 1,200 as siloxane diamine and controlling the content ratio between aromatic diamine and siloxane diamine, the glass transition temperature can be significantly lowered to 30 to 100°C.

[0108] In addition, the second organic solvent may be one or more selected from xylene, benzene, toluene, cyclohexanone, methylcyclohexane, etc., but is not limited thereto.

[0109]

[0110] Formation of a heat-sealed polyimide adhesive layer

[0111] In the heat-melting polyimide adhesive layer forming step (S130), polyamic acid is coated on a polyimide base film and cured by heat treatment to form a heat-melting polyimide adhesive layer.

[0112] In this step, the coating may be applied by any one of dip coating, spin coating, bar coating, slot die coating, and screen printing.

[0113] In addition, heat treatment is performed at 100 to 300°C for 10 to 180 minutes, and it is preferable to perform heat treatment by gradually increasing the temperature through multi-stage heat treatment.

[0114]

[0115] Formation of heteromorphic layer

[0116] In the release layer formation step (S140), a release layer is formed on the heat-sealed polyimide adhesive layer, if necessary.

[0117] Here, the release layer serves to protect the heat-melting polyimide adhesive layer. When laminating the release layer to the lead frame or glass, the release layer is removed from the heat-melting polyimide adhesive layer, and adhesion to the lead frame or glass is achieved through the heat-melting polyimide adhesive layer. The release layer may be formed of one or more resins selected from polyester-based resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyimide (PI), and polyamideimide (PAI), but is not limited thereto.

[0118] With this, the method for manufacturing a heat-sealed polyimide adhesive film according to an embodiment of the present invention can be completed.

[0119]

[0120] As discussed above, the method for manufacturing a heat-sealed polyimide adhesive film according to an embodiment of the present invention secures a glass transition temperature (Tg) of 30 to 100°C by controlling the content ratio between an aromatic diamine and a low-molecular-weight siloxane diamine (PSX) having a weight-average molecular weight of 500 to 1,200, and, in addition, enables the implementation of target adhesive strength by imparting a release force through the application of an alkoxy silane, while preventing residue from remaining on the surface of a lead frame or glass during de-taping during a semiconductor packaging process.

[0121] As a result, the heat-sealing polyimide adhesive film manufactured by the method according to the embodiment of the present invention can be attached to a lead frame under lamination conditions of 100°C or less during a semiconductor packaging process, and can have an initial adhesive strength of 5 to 10 gf / cm after laminating to the lead frame, an adhesive strength of 150 to 200 gf / cm after wire bonding, and an adhesive strength of 150 to 200 gf / cm after the sealing process, and an initial adhesive strength of 2 to 10 gf / cm after laminating to glass, and an adhesive strength of 100 to 200 gf / cm after heat treatment.

[0122]

[0123] Example

[0124] Hereinafter, the structure and operation of the present invention will be described in more detail through preferred embodiments of the present invention. However, these are presented as preferred examples of the present invention and should not be construed as limiting the present invention in any way.

[0125] Anything not described here will be omitted as it is technically feasible for those skilled in this field to infer.

[0126]

[0127] 1. Manufacturing of heat-sealed polyimide adhesive film

[0128]

[0129] Example 1

[0130] 3,3'-dimethyl-[1,1'-biphenyl]-4,4'-diamine (p-PDA) was added to dimethylacetamide (DMAc) and stirred at 40°C to dissolve, then bis(γ-aminopropyl)polydimethyldisiloxane having a weight average molecular weight of 700 Mw and xylene were added.

[0131] Next, 3,3', 4,4'-benzophenonetetracarboxydianhydride and TEOS were added in an amount of 50 mol% of the monomers introduced, and the mixture was reacted at 25°C for 3 days to produce polyamic acid.

[0132] The solid content of polyamic acid was 18 wt%, and the weight ratio of bis(γ-aminopropyl)polydimethyldisiloxane and 3,3'-dimethyl-[1,1'-biphenyl]-4,4'-diamine (p-PDA) was 7:3, and the weight ratio of DMAc and Xylene was 6:4.

[0133] Next, polyamic acid was coated on a 25 ㎛ thick polyimide film, and cured by heat treatment at 130℃, 200℃, 250℃, and 285℃ for 5 minutes each to manufacture a 4 ㎛ thick heat-sealed polyimide pressure-sensitive adhesive layer.

[0134]

[0135] Example 2

[0136] 3,3'-dimethyl-[1,1'-biphenyl]-4,4'-diamine (p-PDA) was added to dimethylacetamide (DMAc) and stirred at 40°C to dissolve, then bis(γ-aminopropyl)polydimethyldisiloxane having a weight average molecular weight of 700 Mw and xylene were added.

[0137] Next, 3,3', 4,4'-benzophenonetetracarboxydianhydride and TEOS were added in an amount of 50 mol% of the monomers introduced, and the mixture was reacted at 25°C for 3 days to produce polyamic acid.

[0138] The solid content of polyamic acid was 18 wt%, and the weight ratio of bis(γ-aminopropyl)polydimethyldisiloxane and 3,3'-dimethyl-[1,1'-biphenyl]-4,4'-diamine (p-PDA) was 5:5, and the weight ratio of DMAc and Xylene was 8:2.

[0139] Next, polyamic acid was coated on a 25 ㎛ thick polyimide film, and cured by heat treatment at 130℃, 200℃, 250℃, and 285℃ for 5 minutes each to manufacture a 4 ㎛ thick heat-sealed polyimide pressure-sensitive adhesive layer.

[0140]

[0141] Comparative Example 1

[0142] 3,3'-dimethyl-[1,1'-biphenyl]-4,4'-diamine (p-PDA) was added to dimethylacetamide (DMAc) and stirred at 40°C to dissolve, and then bis(γ-aminopropyl)polydimethyldisiloxane having a weight average molecular weight of 1,600 Mw and xylene were added.

[0143] Next, 3,3', 4,4'-benzophenonetetracarboxydianhydride and TEOS were added in an amount of 50 mol% of the monomers introduced, and the mixture was reacted at 25°C for 3 days to produce polyamic acid.

[0144] The solid content of polyamic acid was 18 wt%, and the weight ratio of bis(γ-aminopropyl)polydimethyldisiloxane and 3,3'-dimethyl-[1,1'-biphenyl]-4,4'-diamine (p-PDA) was 7:3, and the weight ratio of DMAc and Xylene was 6:4.

[0145] Next, polyamic acid was coated on a 25 ㎛ thick polyimide film, and cured by heat treatment at 130℃, 200℃, 250℃, and 285℃ for 5 minutes each to manufacture a 4 ㎛ thick heat-sealed polyimide pressure-sensitive adhesive layer.

[0146]

[0147] Comparative Example 2

[0148] 3,3'-dimethyl-[1,1'-biphenyl]-4,4'-diamine (p-PDA) was added to dimethylacetamide (DMAc) and stirred at 40°C to dissolve, then bis(γ-aminopropyl)polydimethyldisiloxane having a weight average molecular weight of 700 Mw and xylene were added.

[0149] Next, 3,3', 4,4'-benzophenonetetracarboxydianhydride was added and reacted at 25°C for 3 days to produce polyamic acid.

[0150] The solid content of polyamic acid was 18 wt%, and the weight ratio of bis(γ-aminopropyl)polydimethyldisiloxane and 3,3'-dimethyl-[1,1'-biphenyl]-4,4'-diamine (p-PDA) was 7:3, and the weight ratio of DMAc and Xylene was 6:4.

[0151] Next, polyamic acid was coated on a 25 ㎛ thick polyimide film, and cured by heat treatment at 130℃, 200℃, 250℃, and 285℃ for 5 minutes each to manufacture a 4 ㎛ thick heat-sealed polyimide pressure-sensitive adhesive layer.

[0152]

[0153] Comparative Example 3

[0154] 3,3'-dimethyl-[1,1'-biphenyl]-4,4'-diamine (p-PDA) was added to dimethylacetamide (DMAc) and stirred at 40°C to dissolve, then bis(γ-aminopropyl)polydimethyldisiloxane having a weight average molecular weight of 700 Mw and xylene were added.

[0155] Next, 3,3', 4,4'-benzophenonetetracarboxydianhydride and TEOS were added in an amount of 100 mol% of the monomers introduced, and then reacted at 25°C for 3 days to produce polyamic acid.

[0156] The solid content of polyamic acid was 18 wt%, and the weight ratio of bis(γ-aminopropyl)polydimethyldisiloxane and 3,3'-dimethyl-[1,1'-biphenyl]-4,4'-diamine (p-PDA) was 7:3, and the weight ratio of DMAc and Xylene was 6:4.

[0157] Next, polyamic acid was coated on a 25 ㎛ thick polyimide film, and cured by heat treatment at 130℃, 200℃, 250℃, and 285℃ for 5 minutes each to manufacture a 4 ㎛ thick heat-sealed polyimide pressure-sensitive adhesive layer.

[0158]

[0159] Comparative Example 4

[0160] 3,3'-dimethyl-[1,1'-biphenyl]-4,4'-diamine (p-PDA) was added to dimethylacetamide (DMAc) and stirred at 40°C to dissolve, then bis(γ-aminopropyl)polydimethyldisiloxane having a weight average molecular weight of 700 Mw and xylene were added.

[0161] Next, 3,3', 4,4'-benzophenonetetracarboxydianhydride and TEOS were added in an amount of 50 mol% of the monomers introduced, and the mixture was reacted at 25°C for 3 days to produce polyamic acid.

[0162] The solid content of polyamic acid was 18 wt%, and the weight ratio of bis(γ-aminopropyl)polydimethyldisiloxane and 3,3'-dimethyl-[1,1'-biphenyl]-4,4'-diamine (p-PDA) was 9:1, and the weight ratio of DMAc and Xylene was 6:4.

[0163] Next, polyamic acid was coated on a 25 ㎛ thick polyimide film, and cured by heat treatment at 130℃, 200℃, 250℃, and 285℃ for 5 minutes each to manufacture a 4 ㎛ thick heat-sealed polyimide pressure-sensitive adhesive layer.

[0164]

[0165] Comparative Example 5

[0166] 3,3'-dimethyl-[1,1'-biphenyl]-4,4'-diamine (p-PDA) was added to dimethylacetamide (DMAc) and stirred at 40°C to dissolve, then bis(γ-aminopropyl)polydimethyldisiloxane having a weight average molecular weight of 700 Mw and xylene were added.

[0167] Next, 3,3', 4,4'-benzophenonetetracarboxydianhydride and TEOS were added in an amount of 50 mol% of the monomers introduced, and the mixture was reacted at 25°C for 3 days to produce polyamic acid.

[0168] The solid content of polyamic acid was 18 wt%, and the weight ratio of bis(γ-aminopropyl)polydimethyldisiloxane and 3,3'-dimethyl-[1,1'-biphenyl]-4,4'-diamine (p-PDA) was 2:8, and the weight ratio of DMAc and Xylene was 6:4.

[0169] Next, polyamic acid was coated on a 25 ㎛ thick polyimide film, and cured by heat treatment at 130℃, 200℃, 250℃, and 285℃ for 5 minutes each to manufacture a 4 ㎛ thick heat-sealed polyimide pressure-sensitive adhesive layer.

[0170]

[0171] Comparative Example 6

[0172] 3,3'-dimethyl-[1,1'-biphenyl]-4,4'-diamine (p-PDA) was added to dimethylacetamide (DMAc) and stirred at 40°C to dissolve, then bis(γ-aminopropyl)polydimethyldisiloxane having a weight average molecular weight of 700 Mw and xylene were added.

[0173] Next, 3,3', 4,4'-benzophenonetetracarboxydianhydride and TEOS were added in an amount of 50 mol% of the monomers introduced, and the reaction was performed at 25°C for 5 days to produce polyamic acid.

[0174] The solid content of polyamic acid was 18 wt%, and the weight ratio of bis(γ-aminopropyl)polydimethyldisiloxane and 3,3'-dimethyl-[1,1'-biphenyl]-4,4'-diamine (p-PDA) was 7:3, and the weight ratio of DMAc and Xylene was 6:4.

[0175] Next, polyamic acid was coated on a 25 ㎛ thick polyimide film, and cured by heat treatment at 130℃, 200℃, 250℃, and 285℃ for 5 minutes each to manufacture a 4 ㎛ thick heat-sealed polyimide pressure-sensitive adhesive layer.

[0176]

[0177] Table 1 shows a comparison of the manufacturing process conditions of heat-sealed polyimide adhesive films according to Examples 1 to 2 and Comparative Examples 1 to 6.

[0178]

[0179] [Table 1]

[0180]

[0181]

[0182] 2. Physical property evaluation

[0183] Table 2 shows the results of property evaluation for heat-sealed polyimide adhesive films manufactured according to Examples 1 to 2 and Comparative Examples 1 to 6.

[0184]

[0185] 1) Glass transition temperature

[0186] The glass transition temperature of a heat-sealed polyimide adhesive film was measured using DMA.

[0187]

[0188] 2) Heat resistance

[0189] The thermal decomposition temperature of a heat-sealed polyimide adhesive film was measured using a TGA from Mettler Toledo.

[0190]

[0191] 3) Adhesion (adhesive strength)

[0192] For the adhesive strength for attaching to a lead frame (SUS plate), the heat-sealed polyimide adhesive film was cut to 30 mm (width) × 150 mm (length), then attached to the SUS plate using a hot press (temperature: 90℃, pressure: 10 MPa, time: 5 seconds), and the initial adhesive strength was measured by peeling at 90°. The attached sample was heat-treated at 190℃ / 90 minutes (simulating the die attach process) and 200℃ / 60 minutes (simulating the wire bonding process) using a hot plate, and then the adhesive strength was measured after wire bonding by peeling at 90°. After the wire bonding process was simulated, the sample was heat-treated at 175℃ / 360 minutes using a hot plate (simulating the PMC process), and the adhesive strength was measured after PMC by peeling at 90°.

[0193] For the adhesive strength for attaching a glass carrier, a heat-sealed polyimide adhesive film was cut to 30 mm (width) × 150 mm (height), then attached to glass using a laminator (temperature: 100°C), and the initial adhesive strength was measured by peeling at 90°. The laminated sample was heat-treated using a hot plate at 150°C / 5 minutes and 250°C / 60 minutes (simulating the TSV process), and then the adhesive strength was measured after heat treatment by peeling at 90°.

[0194]

[0195] [Table 2]

[0196]

[0197] As shown in Table 2, the heat-sealing polyimide adhesive films manufactured according to Examples 1 to 2 and Comparative Examples 2 and 4 had a low glass transition temperature of 30 to 100°C, and the initial adhesive strength (5 to 10 gf / cm), the adhesive strength after wire bonding (150 to 200 gf / cm), and the adhesive strength after the sealing process (150 to 200 gf / cm) all satisfied the target values, and it was confirmed that they also had good heat resistance.

[0198] On the other hand, it was confirmed that the heat-sealed polyimide adhesive film manufactured according to Comparative Example 1 had a satisfactory glass transition temperature but poor adhesive strength.

[0199] In addition, it was confirmed that the heat-sealed polyimide adhesive film manufactured according to Comparative Example 3 had poor adhesive strength.

[0200] In addition, it was confirmed that the heat-sealed polyimide adhesive film manufactured according to Comparative Example 4 had satisfactory adhesive strength, but had a low glass transition temperature and poor heat resistance.

[0201] In addition, it was confirmed that the heat-sealed polyimide adhesive film manufactured according to Comparative Example 5 did not adhere.

[0202] In addition, the polyamic acid manufactured according to Comparative Example 6 could not be manufactured into a heat-sealing polyimide adhesive film due to gelation.

[0203]

[0204] 3. Residue Evaluation

[0205] Table 3 shows the results of residue evaluation for heat-sealed polyimide adhesive films manufactured according to Examples 1 to 2 and Comparative Examples 1 to 5.

[0206] To evaluate the residue on the heat-sealed polyimide adhesive film, a hot press was used to attach the film to a lead frame (SUS plate) (temperature: 90°C, pressure: 10 MPa, time: 5 s), and the attached sample was heat-treated using a hot plate at 190°C / 90 min (simulating the die attach process), 200°C / 60 min (simulating the wire bonding process), and 175°C / 360 min (simulating the PMC process). After that, the heat-sealed polyimide adhesive film attached to the other side of the lead frame was removed by de-taping, and the residue remaining on the surface of the lead frame was confirmed using a microscope.

[0207] Additionally, a heat-sealed polyimide adhesive film was attached to the glass using a laminator (temperature: 100°C), and the attached sample was heat-treated (simulating the TSV process) at 150°C / 5 min and 250°C / 60 min using a hot plate. After that, after detaping to remove the heat-sealed polyimide adhesive film attached to the glass surface, the residue remaining on the glass surface was confirmed using a microscope.

[0208]

[0209] Residue Evaluation Criteria

[0210] ○: Less than 1 vol% of the total area of ​​residue on the lead frame or glass surface

[0211] △: 1 to 10 vol% of the total area of ​​residue on the lead frame or glass surface

[0212] Ⅹ: More than 10 vol% of the total area of ​​residue on the lead frame or glass surface

[0213]

[0214] [Table 3]

[0215]

[0216] As shown in Table 3, when manufacturing a semiconductor package using the heat-sealed polyimide adhesive films manufactured according to Examples 1 to 2 and Comparative Examples 1, 3, and 5, it was confirmed that there was almost no residue, as the residue remaining on the surface of the lead frame or glass after de-taping was measured to be less than 1 vol% of the total area.

[0217] On the other hand, when manufacturing a semiconductor package using a heat-sealed polyimide adhesive film manufactured according to Comparative Examples 2 and 4, it was confirmed that a large amount of residue was present, as the residue remaining on the surface of the lead frame or glass after de-taping was measured to be 1 vol% or more relative to the total area.

[0218]

[0219] While the above description focuses on specific embodiments of the present invention, those skilled in the art will appreciate that various modifications and variations can be made. Such modifications and variations, as long as they do not depart from the scope of the technical concept provided by the present invention, are considered to be within the scope of the present invention. Therefore, the scope of the present invention should be determined by the claims set forth below.

[0220]

[0221] [Explanation of symbols]

[0222] 100: Heat-sealed polyimide adhesive film

[0223] 120: Polyimide base film

[0224] 140: Heat-sealed polyimide adhesive layer

[0225] 160: heterogeneous layer

[0226]

[0227] S110: Polyamic acid formation step

[0228] S120: Heat-bonding polyimide adhesive layer formation step

[0229] S130: Heteromorphic layer formation stage

Claims

1. (a) A step of dissolving an aromatic diamine in a first organic solvent, adding a siloxane diamine and a second organic solvent, adding an aromatic dianhydride and an alkoxy silane, and reacting at 0 to 60°C for 1 to 3 days to form a polyamic acid composition; and (b) a method for manufacturing a heat-sealed polyimide adhesive film, comprising the step of coating the polyamic acid composition on a polyimide base film and curing it by heat treatment to form a heat-sealed polyimide adhesive layer; The above alkoxy silane includes at least one of TEOS (Tetraethoxysilane), TMOS (Tetramethoxysilane), PTMOS (Phenyltrimethoxysilane), and MTMOS (Methyltrimethoxysilane), A method for manufacturing a heat-sealed polyimide adhesive film, characterized in that the heat-sealed polyimide adhesive film has a glass transition temperature (Tg) of 50 to 100°C, and thus, when detaping is performed during a semiconductor package manufacturing process using the heat-sealed polyimide adhesive film, the residue remaining on the surface of a lead frame or glass is less than 1 vol% of the total area.

2. In paragraph 1, The above aromatic diamines are 3,3'-dimethyl-[1,1'-biphenyl]-4,4'-diamine, 4,4'-oxydiamiline (ODA), 3,4-oxydiamiline (3,4-ODA), 2,2'-bis[4-(4-aminophenoxy)phenyl]propane (2,2'-Bis[4-(4-aminophenoxy)phenyl]propane: BAPP), 1,4-bis(4-aminophenoxy)benzene (1,4-Bis(4-aminophenoxy)benzene: TPE-Q), 1,3-bis(4-aminophenoxy)benzene (1,3-Bis(4-aminophenoxy)benzene: TPE-R), bis(3-aminophenyl)sulfone (Bis(3-aminopheyl)sulfone: 3-SDA), Bis(4-aminophenyl)sulfone (4-SDA), Trimethylenebis(4-aminobenzoate) (TMAB), 1,5-diaminonaphthalene (1,5-DAN), Bis[4-(3-aminophenoxy)phenyl]sulfone (m-BAPS), 4-(4-aminophenoxy)phenyl]sulfone (p-BAPS), 2,5-dimethyl-1,4-phenylenediamine (2,5-dimethyl-1,4-phenylenediamine: DMPDA), 2,2'-dimethylbenzidine (m-Tolidine), 3,3'-dimethylbenzidine (3,3'-Dimethylbenzidine: o-Tolidine), 4-Aminophenyl-4-amino Benzoate (APAB), Bis(4-aminophenyl)terephthalate (BPTP), 3,3'-diamino-4,4'-dihydroxybiphenyl (3,3'-diamino-4,4'-dihydroxybiphenyl (HAB), 1,3-phenylenediamine (MPDA), 3,5-diaminobenzoic acid (DABA), 4,4'-diamino-(1,1'-biphenyl)-2,2'-dicarboxylic acid (4,4-APC), m-Xylylenediamine (MXDA), 4,4'-diaminobenzanilide (DABA), 4,4'-bis(4-aminophenoxy)benzophenone (4BABP), Containing at least one of 4,4'-bis(4-aminophenoxy)biphenyl (4,4'-Bis(4-aminophenoxy)biphenyl: BAPB), 2,2'-bis(trifluoromethyl)benzidine (2,2'-Bis(trifluoromethyl)benzidine: TFMB), 2,2-bis[4-(4-aminophenoxy)phenyl]propane (2,2-Bis[4-(4-aminophenoxy)phenyl]propane: HFBAPP), 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl ether (2,2'-Bis(trifluoromethyl)-4,4'-diaminobiphenyl ether: 6FODA), and 2,2'-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (2,2'-Bis(3-amino-4-hydroxyphenyl)hexafluoropropane: 6FAP), The above aromatic dianhydrides are 3,3', 4,4'-benzophenonetetracarbolxylic dianhydride, pyromellitic dianhydride (PMDA), 4,4'-(4,4'-isopropylidenediphenoxy)diphthalic anhydride (BPADA), 4,4'-(Hexafluoroisopropylidene)diphthalic anhydride (6FDA), 4,4'-oxydiphthalic anhydride (ODPA), A method for producing a heat-sealing polyimide adhesive film, characterized in that it comprises at least one of 3,3',4,4'-benzophenonetetracarboxylic dianhydride (BTDA), ethylene glycol bis(4-trimellitate anhydride) {(Ethylene glycol bis(4-trimellitate anhydride) {(TMEG)}, 4,4'-sulfonyldiphthalic anhydride (DSDA), and naphthalene-2,3,6,7-tetracarboxylic acid (2,3,6,7-NTDA).

3. In paragraph 1, The above siloxane diamine contains bis(γ-aminopropyl)polydimethyldisiloxane, A method for manufacturing a heat-sealing polyimide adhesive film, characterized in that the above bis(γ-aminopropyl)polydimethyldisiloxane has a weight average molecular weight (Mw) of 500 to 1,200.

4. In paragraph 1, The above heat treatment is performed at 100 to 300°C for 10 to 180 minutes. A method for manufacturing a heat-sealed polyimide adhesive film, characterized in that the above heat treatment is performed by gradually increasing the temperature through a multi-stage heat treatment.

5. In paragraph 1, After step (b) above, (c) a step of forming a release layer on the heat-sealed polyimide adhesive layer; A method for manufacturing a heat-sealed polyimide adhesive film, characterized in that it further comprises:

6. Polyimide base film; A heat-sealed polyimide adhesive layer laminated on the polyimide base film; and A release layer laminated on the above heat-sealed polyimide adhesive layer; The above heat-sealing polyimide adhesive layer comprises aromatic diamine, siloxane diamine, aromatic dianhydride and alkoxy silane, The above siloxane diamine includes bis(γ-aminopropyl)polydimethyldisiloxane, and the bis(γ-aminopropyl)polydimethyldisiloxane has a weight average molecular weight (Mw) of 500 to 1,200. The above alkoxy silane includes at least one of TEOS (Tetraethoxysilane), TMOS (Tetramethoxysilane), PTMOS (Phenyltrimethoxysilane), and MTMOS (Methyltrimethoxysilane), The heat-sealing polyimide adhesive film is characterized in that the heat-sealing polyimide adhesive film has a glass transition temperature (Tg) of 50 to 100°C, and thus, when detaping is performed during a semiconductor package manufacturing process using the heat-sealing polyimide adhesive film, the residue remaining on the surface of the lead frame or glass is less than 1 vol% of the total area.

7. In paragraph 6, The above polyimide base film has a thickness of 10 to 100 μm, A heat-sealing polyimide adhesive film, characterized in that the heat-sealing polyimide adhesive layer has a thickness of 2 to 10 μm.

8. In paragraph 6, The above heat-sealed polyimide adhesive film is A heat-sealing polyimide adhesive film characterized in that it is attached to a lead frame or glass under lamination conditions of 100℃ or less.

9. In paragraph 6, The above heat-sealed polyimide adhesive film is The initial adhesive strength after laminating to the lead frame during the semiconductor packaging process is 5 to 10 gf / cm, The adhesive strength after wire bonding is 150 to 200 gf / cm, A heat-sealing polyimide adhesive film characterized by an adhesive strength of 150 to 200 gf / cm after a bagging process.

10. In paragraph 6, The above heat-sealed polyimide adhesive film is The initial adhesive strength after laminating to glass during the semiconductor packaging process is 2 to 10 gf / cm, A heat-sealing polyimide adhesive film characterized by an adhesive strength of 100 to 200 gf / cm after heat treatment.

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