Electron gun device for vapor deposition

Abstract

This electron gun device for vapor deposition includes: a device body provided with an electron beam source and installed laterally of a crucible that has an open top and in which an evaporation material to be vapor-deposited on a coating member is stored; and a pair of pole pieces for guiding an electron beam emitted from the device body to a target area set in the crucible. The pair of pole pieces includes: a base end part installed in the device body; a tip-end part disposed above the crucible and behind the target area as viewed from the device body; a first connection part extending from the base end part in a direction away from the device body; a second connection part that connects an end part of the first connection part and the tip-end part and extends in a second direction that intersects a first direction, which is along a straight line connecting the device body and the target region; and a protruding piece that extends from at least a part of the tip-end part, the first connection part, and the second connection part in a direction away from the target region.

Description

Electron gun for evaporation

[0001] The present disclosure relates to an electron gun apparatus for vapor deposition.

[0002] BACKGROUND ART Vacuum deposition apparatuses are known that heat and evaporate an evaporation material placed in a vacuum chamber, and then adhere the resulting evaporated particles to a coating material, such as a component that constitutes an optical device, such as a substrate or a lens, thereby forming a coating material.

[0003] Japanese Patent Application Laid-Open No. 2015-007269 describes an electron gun device included in a vacuum deposition apparatus, in which an electron beam generated from an electron beam generating means is deflected by a deflection magnetic field generating means including a pole piece and made to impinge on an evaporation material in a crucible.

[0004] The above-described vacuum deposition apparatuses are often used for thin film formation in the field of optical devices. With the recent trend toward higher performance optical devices, there is a demand for suppressing optical loss (e.g., scattering and absorption) in optical thin films formed on optical devices. In response to this demand, there is a demand for improved thin film deposition accuracy in vacuum deposition apparatuses. However, existing vacuum deposition apparatuses, particularly deposition electron gun apparatuses used in vacuum deposition apparatuses, still have room for improvement in terms of suppressing deterioration in film deposition quality.

[0005] The present disclosure provides an electron gun apparatus for vapor deposition that suppresses deterioration in film formation quality.

[0006] An evaporation electron gun device according to a first aspect of the present disclosure includes: an apparatus main body having an electron beam source and installed to the side of a crucible that is open at the top and contains an evaporation material to be evaporated onto a coating member; and a pair of pole pieces that guide the electron beam emitted from the apparatus main body to a target area set in the crucible, wherein the pair of pole pieces include a base end installed in the apparatus main body, a tip end disposed above the crucible and behind the target area as seen from the apparatus main body, a first connecting portion extending from the base end in a direction away from the apparatus main body, a second connecting portion connecting an end of the first connecting portion to the tip end and extending in a second direction intersecting a first direction along a straight line connecting the apparatus main body and the target area, and protruding pieces extending in a direction away from the target area from at least a portion of the tip end, the first connecting portion, and the second connecting portion.

[0007] With such an electron gun device for vapor deposition, the provision of a protruding piece can reduce the energy of the reflected electrons that are reflected off the target area and fly out, thereby suppressing a decrease in film formation quality caused by irradiation of the coating material.

[0008] An electron gun device for deposition according to a second aspect of the present disclosure is the electron gun device for deposition according to the first aspect of the present disclosure, wherein the protruding piece includes a reflected electron deflection member that protrudes in a direction away from the tip or from a part of the second connecting portion adjacent to the tip in order to deflect reflected electrons reflected from the target region in a predetermined direction.

[0009] According to such an electron gun device for vapor deposition, by adopting a reflected electron deflection member as the protruding piece that protrudes from the tip or a part adjacent to the tip of the second connecting part, it is possible to efficiently change the reflected electrons in a predetermined direction.

[0010] An electron gun device for deposition according to a third aspect of the present disclosure is an electron gun device for deposition according to the first or second aspect of the present disclosure, wherein the protruding piece is formed so that the length of the entire second connecting portion in the first direction is longer in the direction away from the device main body than the length of the tip portion in the first direction.

[0011] In this deposition electron gun device, the protrusion is formed by increasing the length of the second connecting portion along the first direction, so that the protrusion can be provided on the pole piece relatively easily. In addition, the part of the second connecting portion that functions as the protrusion generates a magnetic field behind the tip, so that the magnetic field can deflect the reflected electrons that are reflected and emitted onto the target area.

[0012] An electron gun device for deposition according to a fourth aspect of the present disclosure is an electron gun device for deposition according to any one of the first to third aspects of the present disclosure, wherein the protruding piece includes one or more magnetic field adjustment pieces extending in a direction away from the target region from the portion where the second connecting portion and the end of the first connecting portion are connected.

[0013] With such an electron gun device for vapor deposition, a magnetic field can also be generated around the portion where the second connecting portion and the first connecting portion, which is relatively far from the target area, are connected, and this magnetic field can also deflect reflected electrons heading toward the portion where the second connecting portion and the first connecting portion are connected.

[0014] The deposition electron gun device according to a fifth aspect of the present disclosure is an deposition electron gun device according to any one of the first to fourth aspects of the present disclosure, wherein the protruding piece has one or more magnetic field adjustment protrusions on the surface facing the other protruding pieces, the magnetic field adjustment protrusions extending in a direction approaching the other protruding pieces.

[0015] According to such an electron gun device for deposition, the magnetic field generated by the protruding piece can be locally strengthened, and the magnetic field generated around the protruding piece can be easily adjusted.

[0016] An electron gun device for vapor deposition according to a sixth aspect of the present disclosure is an electron gun device for vapor deposition according to any one of the first to fifth aspects of the present disclosure, wherein the protruding piece extends from at least a portion of the tip portion, the first connecting portion, and the second connecting portion in a direction away from the target region and in a direction away from or towards the crucible.

[0017] According to this deposition electron gun device, the protruding piece can be extended along the traveling direction of the reflected electrons, and the magnetic field generated by the protruding piece can be efficiently applied to the reflected electrons, thereby effectively suppressing the energy of the reflected electrons.

[0018] The deposition electron gun device according to a seventh aspect of the present disclosure is an deposition electron gun device according to any one of the first to sixth aspects of the present disclosure, wherein the thickness of at least a portion of the first connecting portion along a third direction intersecting the first direction and the second direction is thicker than the thickness of the tip portion along the third direction.

[0019] According to such an electron gun device for vapor deposition, by increasing the thickness of at least a portion of the first connecting portion, the magnetic field generated around the first connecting portion can be increased, and this magnetic field can deflect even reflected electrons that have reached the periphery of the first connecting portion.

[0020] An electron gun device for vapor deposition according to an eighth aspect of the present disclosure is an electron gun device for vapor deposition according to any one of the first to seventh aspects of the present disclosure, wherein the pair of pole pieces include a detour portion extending in a direction away from the target region in at least a portion of the distance between the base end and a position above the crucible.

[0021] With this type of electron gun for deposition, the pole piece can be easily routed to a position away from the target area, which prevents the evaporation material from adhering to the surface of the pole piece, thereby preventing a decrease in the quality of the film formed on the coating member that occurs in association with the re-evaporation of the evaporation material adhering to the pole piece.

[0022] A deposition electron gun device according to a ninth aspect of the present disclosure is the deposition electron gun device according to the eighth aspect of the present disclosure, wherein the detour portion extends in a direction intersecting a straight line connecting the device main body and the target area.

[0023] According to such an electron gun device for vapor deposition, adhesion of the evaporation material to the pole piece can be more effectively suppressed.

[0024] An electron gun device for vapor deposition according to a tenth aspect of the present disclosure is the electron gun device for vapor deposition according to the eighth or ninth aspect of the present disclosure, wherein the base end is located below the opening of the crucible, and the bypass portion extends below the opening of the crucible.

[0025] According to such an electron gun device for vapor deposition, adhesion of the evaporation material to the pole piece can be more effectively suppressed.

[0026] An electron gun device for vapor deposition according to an eleventh aspect of the present disclosure includes: an apparatus main body having an electron beam source, which is installed to the side of a crucible that is open at the top and contains an evaporation material to be vapor-deposited on a coating member; and a pair of pole pieces that guide the electron beam emitted from the apparatus main body to a target area set in the crucible, the pair of pole pieces having base ends installed in the apparatus main body and tip ends disposed above the crucible and behind the target area as seen from the apparatus main body, and having a detour portion extending in a direction away from the target area in at least a portion of the distance between the base ends and a position reaching above the crucible.

[0027] With this type of electron gun for deposition, the pole piece can be routed to a position away from the target area, which prevents the evaporation material from adhering to the surface of the pole piece, thereby preventing a decrease in film quality that occurs due to re-evaporation of the evaporation material adhering to the pole piece.

[0028] According to the deposition electron gun device of the present disclosure, it is possible to suppress a decrease in the quality of film formation.

[0029] 1 is a schematic perspective view showing an example of a deposition electron gun device according to a first embodiment. FIG. 1 is a plan view of the deposition electron gun device shown in FIG. 1. FIG. 2 is a side view of the deposition electron gun device shown in FIG. 1. FIG. 3 is a view showing a modified example of a reflected electron deflection member of the deposition electron gun device shown in FIG. 1. FIG. 4 is a view showing a modified example of a reflected electron deflection member of the deposition electron gun device shown in FIG. 1. FIG. 5 is a view showing a modified example of a reflected electron deflection member of the deposition electron gun device shown in FIG. 1. FIG. 6 is a view showing a modified example of a pole piece of the deposition electron gun device shown in FIG. 1. FIG. 7 is a view showing a modified example of a pole piece of the deposition electron gun device shown in FIG. 1. FIG. 8 is a schematic perspective view showing an example of a deposition electron gun device according to a second embodiment. FIG. 9 is a plan view of the deposition electron gun device shown in FIG. 7. FIG. 9 is a view showing a modified example of a pole piece of the deposition electron gun device shown in FIG. 7. FIG. 10 is a schematic perspective view showing an example of a deposition electron gun device according to a third embodiment. FIG. 11 is a plan view of the deposition electron gun device shown in FIG. 10. FIG. 11 is a side view of the deposition electron gun device shown in FIG. 10. FIG. 12 is a schematic perspective view showing a first modified example of the deposition electron gun device shown in FIG. 10. Fig. 11 is a schematic perspective view showing a second modified example of the deposition electron gun device shown in Fig. 10. Fig. 12 is a schematic perspective view showing an example of a deposition electron gun device according to a fourth embodiment.

[0030] This application is based on Japanese Patent Application No. 2023-193835 filed on November 14, 2023, and Japanese Patent Application No. 2024-137848 filed on August 19, 2024, the contents of which are incorporated herein by reference. The present disclosure will become more fully understood from the following detailed description. Further scope of application of the present application will become apparent from the following detailed description. However, the detailed description and specific examples are preferred embodiments of the present disclosure and are described for illustrative purposes only. From this detailed description, various changes and modifications will be apparent to those skilled in the art within the spirit and scope of the present disclosure. The applicant does not intend to dedicate any of the described embodiments to the public, and disclosed modifications and alternatives that may not literally fall within the scope of the claims are considered part of the invention under the doctrine of equivalents. Like reference numbers and names in the various drawings indicate like elements.

[0031] Hereinafter, each embodiment for carrying out the present disclosure will be described with reference to the drawings. Note that the scope necessary for the explanation to achieve the object of the present disclosure will be schematically shown below, and the scope necessary for explaining the relevant parts of the present disclosure will be mainly explained, and the parts for which explanation is omitted will be referred to as publicly known technologies. Furthermore, identical or similar reference numerals will be used for identical or corresponding components in the drawings, and duplicate explanations will be omitted. Furthermore, when a plurality of identical or corresponding components are included in the drawings, only some of them may be referenced to make the drawings easier to understand.

[0032] First Embodiment Fig. 1 is a schematic perspective view showing an example of an evaporation electron gun device according to a first embodiment of the present disclosure. Fig. 2 is a plan view of the evaporation electron gun device shown in Fig. 1. Fig. 3 is a side view of the evaporation electron gun device shown in Fig. 1. In the following description, the direction indicated by arrow A in Figs. 1 to 3 is provisionally defined as the left-right direction, the direction indicated by arrow B as the front-rear direction, and the direction indicated by arrow C as the height direction (or up-down direction). The front-rear direction indicated by arrow B is an example of a first direction, and the left-right direction indicated by arrow A is an example of a second direction.

[0033] The deposition electron gun device 1 according to the first embodiment of the present disclosure can be employed as part of a vacuum deposition apparatus. This vacuum deposition apparatus may include, for example, at least a vacuum chamber (not shown) capable of creating a substantially vacuum state inside, a substrate (not shown) as an example of a coating member supported above the vacuum chamber, a crucible (sometimes called a "hearth" or "hearth liner") 3 containing an evaporation material 2 to be deposited on the substrate, and the deposition electron gun device 1. Note that the deposition electron gun device 1 according to the present disclosure can also be applied to deposition apparatuses other than the vacuum deposition apparatus configured as described above.

[0034] 1 to 3, the evaporation electron gun device 1 according to this embodiment may be an apparatus that is disposed adjacent to a crucible 3 and that irradiates an electron beam EB onto an evaporation material 2 contained in the crucible 3. Note that the term "adjacent" as used here means that the device is adjacent to the crucible 3, and may be disposed to the side of the crucible 3 as shown in FIG. 1, or may include a device that is disposed at least partially below the crucible 3.

[0035] As shown in FIG. 2 , the crucible 3 exemplified in this embodiment has a circular container 3A with an open top. The container 3A may contain an evaporation material 2 that is circular like the container 3A but slightly smaller than the container 3A. The crucible 3 may be connected to a rotation mechanism (not shown) and be rotatable in the horizontal direction in order to change the evaporation material 2 positioned in the target area TA. The rotation speed of the crucible 3 may be adjusted taking into account the capacity and evaporation speed of the evaporation material 2, etc.

[0036] In this embodiment, the crucible 3 is exemplified as having a circular container 3A, but the shape of the crucible 3 is not limited thereto. For example, a single cup-shaped crucible having an opening substantially the same size as the target area TA can be used. Alternatively, a plurality of cup-shaped crucibles can be arranged in a circle at predetermined intervals on a disk-shaped turntable, and the crucible irradiated with the electron beam can be changed by rotating the turntable. Furthermore, the opening of the container 3A of the crucible 3, excluding the target area TA, may be covered with a cover member (not shown) to prevent unintended heating due to collisions of reflected electrons RE and contamination from the outside.

[0037] The evaporation material 2 may be any material that is to be evaporated onto the substrate. ２ ) and titanium oxide (TiO ２ ), zirconium oxide (ZrO ２ When the electron beam EB is irradiated onto a portion of the annular evaporation material 2 located in the target area TA, the evaporation material 2 in that portion is heated, melted, and evaporated, and is deposited on the surface of a substrate placed above the target area TA.

[0038] The above-mentioned electron gun device 1 for vapor deposition includes at least an apparatus main body 10, at least a portion of which is installed to the side of the crucible 3, and an electron beam deflection means 20 that guides the electron beam EB irradiated from the apparatus main body 10 to a target area TA set in the crucible 3.

[0039] The apparatus main body 10 is a member that is installed to the side of the crucible 3 and is capable of irradiating the electron beam EB. The apparatus main body 10 may include a housing 11, an electron beam source 12 provided inside the housing 11, and a window 13 formed in the upper part of the housing 11.

[0040] The electron beam source 12 may include, for example, a filament that emits thermoelectrons and an accelerator that accelerates the thermoelectrons to form an electron beam EB. The housing 11 may accommodate the electron beam source 12 therein, have a flat top surface, and have a window 13 formed as a through-hole in part of the top surface. A scan coil (not shown) may be disposed around the window 13 within the housing 11 for scanning the electron beam EB within the target area TA. The electron beam EB generated by the electron beam source 12 including the above-described configuration is emitted outside the housing 11 through the window 13.

[0041] The electron beam deflection means 20 deflects the electron beam EB generated in the apparatus main body 10 and emitted outside the housing 11, and guides it to a target area TA set in the crucible 3. The electron beam deflection means 20 deflects the electron beam EB in a predetermined direction using an electric field or a magnetic field. The electron beam deflection means 20 of this embodiment includes a pair of pole pieces 21L, 21R that guide the electron beam EB to the target area TA by generating a magnetic field around them. In addition, it may include a magnetic source 22 that generates a magnetic field around the pair of pole pieces 21L, 21R.

[0042] The pair of pole pieces 21L, 21R may be configured as strip-shaped members made of a ferromagnetic material and having a predetermined thickness. The pair of pole pieces 21L, 21R may be arranged so as to sandwich a straight line L connecting the device body 10, more specifically, the window portion 13, and the target area TA. More preferably, the pair of pole pieces 21L, 21R may be spaced apart from each other so as to be symmetrical with respect to the straight line L. Note that the straight line L may substantially coincide with the horizontal traveling direction of the electron beam EB. Furthermore, in this embodiment, the pair of pole pieces 21L, 21R are symmetrical with respect to the straight line L, but the shapes of the pair of pole pieces 21L, 21R do not need to be symmetrical and may have different shapes.

[0043] The pair of pole pieces 21L, 21R includes base end portions 41L, 41R installed in the device body 10, tip end portions 42L, 42R disposed above the crucible 3 and behind the target area TA as viewed from the device body 10, first connecting portions 43L, 43R extending from the base end portions 41L, 41R in a direction away from the device body 10, and connecting ends of the first connecting portions 43L, 43R to the tip end portions 42L, 42R and connecting the device body 10 to the target. The second connecting portions 44L, 44R extend in a second direction (e.g., left-right direction) that intersects with a first direction (e.g., front-to-back direction) along a straight line L connecting the target area TA, and protruding pieces (e.g., reflected electron deflection members, reflected electron deflection units, or magnetic field adjustment pieces described below) extend in a direction away from the target area from at least a portion of the tip portions 42L, 42R, the first connecting portions 43L, 43R, and the second connecting portions 44L, 44R.

[0044] The base ends 41L, 41R may be set at positions sandwiching the window portion 13 on the housing 11. The base ends 41L, 41R may be connected to the magnetic source 22. Furthermore, it is preferable that the base ends 41L, 41R are positioned below the opening of the accommodation portion 3A of the crucible 3, so that they are not substantially exposed to the evaporated evaporation material 2.

[0045] The tip portions 42L, 42R may be disposed so as to face each other at a predetermined distance behind the target area TA in the front-to-rear direction. The shape of the tip portions 42L, 42R is preferably such that at least a portion of the facing end faces approach each other from the front to the rear in a plan view, as shown in Figures 1 and 2, so that the direction of the magnetic field formed by the tip portions 42L, 42R is toward the target area TA.

[0046] The first connecting portions 43L, 43R constitute portions of the pair of pole pieces 21L, 21R that extend in a direction away from the device body 10. In this embodiment, the first connecting portions 43L, 43R are composed of detour portions 45L, 45R that are connected to the base ends 41L, 41R, and extension portions 46L, 46R that extend substantially linearly from the detour portions 45L, 45R in a direction approaching the crucible 3.

[0047] The detour portions 45L, 45R may be provided between the base ends 41L, 41R and a position above the crucible 3, in other words, a position overlapping the crucible 3 in a plan view. As shown in FIGS. 1 and 2 , the detour portions 45L, 45R of this embodiment have one end connected to the base ends 41L, 41R and extend from the one end in a direction intersecting the above-mentioned line L, specifically, in the left-right direction, so as to move away from each other. It is also preferable that at least a portion of the detour portions 45L, 45R extend below the opening of the accommodation portion 3A of the crucible 3. By including the above-mentioned detour portions 45L, 45R in the pole pieces 21L, 22R, the pole pieces 21L, 22R can be routed to a position away from above the target area TA. The operation and effect of providing the detour portions 45L, 45R will be described in detail later.

[0048] The extending portions 46L, 46R may extend linearly such that one end is connected to one end of the detour portion 45L, 45R and the other end is located at a position passing through the target area TA in the front-to-rear direction from one end of the detour portion 45L, 45R. In this embodiment, the extending portions 46L, 46R extend in a direction substantially parallel to the straight line L. Note that the shape of the extending portions 46L, 46R may not be linear as described above, but may be bent or curved at one or more locations. Furthermore, the extending direction of the extending portions 46L, 46R may extend in a direction different from the extending direction of the straight line L.

[0049] The second connecting portions 44L, 44R constitute portions that connect the ends of the first connecting portions 43L, 43R and the tips 42L, 42R of the pair of pole pieces 21L, 21R. The second connecting portions 44L, 44R may extend in a second direction that intersects with the straight line L, for example, in a direction perpendicular to the straight line L.

[0050] The magnetic source 22 can be configured with a permanent magnet or an excitation coil (in other words, an electromagnet). This magnetic source 22 can magnetize the pole pieces 21L, 21R, etc. by being connected to the pole pieces 21L, 21R or other members within the housing 11.

[0051] In the deposition electron gun device 1 according to this embodiment, the electron beam EB emitted from the device main body 10 is deflected by 180 to 270 degrees in its traveling direction by the action of the electron beam deflection means 20 including the above-described configuration, and is then irradiated onto the target area TA, as shown in Fig. 3. The evaporation material 2 in the target area TA irradiated with the electron beam EB is heated and melted by the electron beam EB, vaporizes, and is evaporated onto the surface of a substrate serving as a coating member previously placed above the target area TA, thereby forming a thin film.

[0052] In a vacuum deposition apparatus including an existing deposition electron gun device, one of the factors that reduces the quality of the film formed on the coating member is the collision of reflected electrons reflected by the evaporation material with a thin film (more specifically, the evaporated film) on the coating member. Specifically, the reflected electrons, which are part of the electron beam irradiated on the evaporation material but are not absorbed by the evaporation material, collide with the surface of a substrate serving as a coating member placed above the evaporation material, causing damage or deformation of the thin film at the collision site. Such damage or deformation is caused by the impact of the reflected electrons colliding with the thin film or by heat generated when the reflected electrons collide. In this embodiment, a pair of reflected electron deflection members 30L and 30R is employed as an example of protruding pieces to suppress the degradation of the film formed quality due to the reflected electrons.

[0053] The pair of reflected electron deflection members 30L, 30R are members for deflecting electrons reflected from the target region in a predetermined direction. The pair of reflected electron deflection members 30L, 30R extend from the tip portions 42L, 42R of the pair of pole pieces 21L, 21R, respectively, or from portions of the second connecting portions 44L, 44R adjacent to the tip portions 42L, 42R in a direction away from the device body 10. As shown in FIGS. 1 to 3 , the pair of reflected electron deflection members 30L, 30R in this embodiment extend along a straight line L from the tip portions 42L, 42R. The pair of reflected electron deflection members 30L, 30R can be configured as strip-shaped members having a predetermined thickness made of a ferromagnetic material, similar to the pole pieces 21L, 21R. In this embodiment, the pair of reflected electron deflection members 30L, 30R are illustrated as being integrally formed with the pole pieces 21L, 21R, but are not limited thereto. For example, the pair of reflected electron deflection members 30L, 30R and the pole pieces 21L, 21R may be formed of separate members and then connected to each other.

[0054] The pair of reflected electron deflection members 30L, 30R described above are formed integrally with the pair of pole pieces 21L, 21R, or are formed as separate members and then connected together, so that the pair of reflected electron deflection members 30L, 30R are magnetized by the magnetic source 22 in the same manner as the pair of pole pieces 21L, 21R. Therefore, in the deposition electron gun apparatus 1 according to this embodiment, it is not necessary to separately prepare a magnetic source for magnetizing the pair of reflected electron deflection members 30L, 30R.

[0055] Furthermore, the pair of reflected electron deflection members 30L, 30R in this embodiment extend substantially parallel to each other with a predetermined gap therebetween. The predetermined gap can be adjusted as appropriate, taking into consideration, for example, the width of the target area TA in the left-right direction. Furthermore, although this embodiment illustrates the pair of reflected electron deflection members 30L, 30R extending substantially parallel to each other with a predetermined gap therebetween, the gap may narrow or widen from the base end to the tip end.

[0056] The magnetic field generated by the pair of reflected electron deflection members 30L, 30R mainly acts to deflect downward the reflected electrons RE that are reflected by the electron beam EB irradiated onto the target area TA and fly upward. As shown in Figure 3, the reflected electrons RE deflected by the magnetic field generated by the pair of reflected electron deflection members 30L, 30R fly upward from an arbitrary position P1 in the target area TA at which the electron beam EB is irradiated, and then travel downward along the gap between the pair of reflected electron deflection members 30L, 30R to approach the upper surface of the crucible 3, and collide with an arbitrary position P2 on the crucible 3. Of the reflected electrons RE that collide with the upper surface of the crucible 3 at position P2, some are absorbed by the upper surface of the crucible 3, and the other part flies upward again as reflected electrons RE. The reflected electrons RE continue to travel along the gap between the pair of reflected electron deflection members 30L and 30R, moving downward so as to approach the top surface of the crucible 3, and collide with another arbitrary position P3 on the top surface of the crucible 3. Thereafter, the same operation can be repeated. Note that in FIG. 3 , in order to facilitate understanding of the trajectory of the reflected electrons RE, the irradiation position P1 of the electron beam EB at a specific timing (also referred to as the position of the first reflection) and the associated reflection positions P2 and P3 of the reflected electrons RE (also referred to as the positions of the second and third reflections) are illustrated as arbitrary points, respectively. However, each of the positions P1 to P3 can be displaced depending on the irradiation position and energy of the electron beam EB. Therefore, each of the positions P1 to P3 can be displaced, particularly in the forward and backward directions, depending on various conditions.

[0057] The deposition electron gun apparatus 1 according to this embodiment can reduce the energy of the electron beam impinging on the substrate surface according to the number of reflections, thereby preventing a decrease in film formation quality. While this embodiment illustrates an example in which the reflected electrons RE are caused to impinge on the upper surface of the crucible 3 by the action of a magnetic field generated around the pair of reflected electron deflectors 30L and 30R, a cover member (not shown) may be provided on the upper surface of the crucible 3 in advance, and the reflected electrons RE may be caused to impinge on the surface of the cover member. The cover member may be a plate-shaped member capable of covering the upper surface of the crucible 3 except for the target area TA and the upper portion of the high-temperature area HA surrounding the target area TA. Furthermore, the cover member may be made of a material capable of absorbing the energy of the reflected electrons. Using such a cover member can also prevent the reflected electrons RE from impinging on portions of the evaporation material 2 that are not located within the target area TA.

[0058] The longitudinal lengths of the pair of reflected electron deflection members 30L, 30R preferably extend to at least a position rearward as viewed from the apparatus main body 10 beyond the position where the reflected electrons RE are reflected a second time at the top of the crucible 3 (position P2 in FIG. 3 ). More preferably, the longitudinal lengths of the pair of reflected electron deflection members 30L, 30R extend to a position rearward as viewed from the apparatus main body 10 beyond the position where the reflected electrons RE are reflected a third time at the top of the crucible 3 (position P3 in FIG. 3 ), as shown in FIG. 3 . Adjusting the lengths of the pair of reflected electron deflection members 30L, 30R to the above-described range allows the magnetic field of the pair of reflected electron deflection members 30L, 30R to efficiently act on the reflected electrons RE. Therefore, the energy of the reflected electrons RE after passing through the region between the pair of reflected electron deflection members 30L, 30R can be significantly reduced. The position at which the reflected electrons RE are reflected the second time may vary, particularly in the forward and backward directions, depending on the irradiation position and energy of the electron beam EB, the energy of the reflected electrons RE themselves, etc. Therefore, the above-mentioned "position at which the reflected electrons RE are reflected the second time" refers to the average position in the forward and backward directions of the positions at which the reflected electrons RE emitted under various environments are reflected the second time on the upper surface of the crucible 3.

[0059] In the above-described embodiment, a case has been described in which strip-shaped ferromagnetic bodies extending substantially parallel to each other in the front-rear direction from the tip ends 42L, 42R of the pair of pole pieces 21L, 21R are used as the pair of reflected electron deflection members 30L, 30R. However, the present disclosure is not limited to this. Therefore, several modified examples of the pair of reflected electron deflection members will be described below. The modified examples described below are similar to those of the first embodiment described above, except for the structure of the pair of reflected electron deflection members. Therefore, the same reference numerals will be used to designate structures similar to those of the above-described embodiment, and their description will be omitted. The following description will focus on the differences.

[0060] 4A, 4B, 5A, and 5B are diagrams showing modified examples of the reflected electron deflection member of the deposition electron gun device shown in FIG. 4A, 4B, and 5A are plan views, and FIG. 5B is a side view. In the deposition electron gun device 1 described above, a pair of reflected electron deflection members 30L and 30R extend from the tip ends 42L and 42R of the pair of pole pieces 21L and 21R described above. In contrast, the deposition electron gun device 1A according to this modified example has a pair of reflected electron deflection members 31L and 31R extending from positions close to the tip ends 42L and 42R of the pair of pole pieces 21L and 21R, as shown in FIG. 4A.

[0061] The pair of reflected electron deflection members 31L, 31R in the deposition electron gun apparatus 1A of this modified example are formed so as to extend not from the tip ends 42L, 42R of the pair of pole pieces 21L, 21R but from a position relatively close to the tip ends 42L, 42R of the second connecting portions 44L, 44R. In this pair of reflected electron deflection members 31L, 31R, as shown in FIG. 4A , the gap between the pair of reflected electron deflection members 31L, 31R may be larger than the gap between the pair of reflected electron deflection members 30L, 30R described above. Therefore, the magnitude of the magnetic field generated by the pair of reflected electron deflection members 31L, 31R should be adjusted to a level that does not interfere with the deflection of the reflected electrons RE. The positions at which the base ends of the pair of reflected electron deflection members 31L, 31R and the second connecting portions 44L, 44R are connected should be adjusted taking into account the direction and magnitude of the magnetic field generated around the pair of reflected electron deflection members 31L, 31R.

[0062] In addition, the deposition electron gun apparatus 1 described above employs a pair of reflected electron deflection members 30L, 30R that extend substantially parallel to one another, whereas the deposition electron gun apparatus 1B according to this modification employs a pair of reflected electron deflection members 32L, 32R that extend in directions away from one another from the base end toward the tip end, as shown in FIG.

[0063] The pair of reflected electron deflection members 32L, 32R in the deposition electron gun apparatus 1B of this modified example extend from the tip ends 42L, 42R of the pair of pole pieces 21L, 21R in a direction away from the apparatus body 10 and in a direction inclined with respect to the line L. As a result, as shown in FIG. 4B , the gap between the tip ends of the pair of reflected electron deflection members 32L, 32R is larger than the gap between the base ends. The angle between the pair of reflected electron deflection members 32L, 32R may be adjusted to, for example, −60° to 90°, more preferably −30° to 60°. Note that when the angle between the pair of reflected electron deflection members 32L, 32R is negative (e.g., −30°), the gap between the tip ends is smaller than the gap between the base ends, unlike the shape shown in FIG. 4B . The pair of reflected electron deflection members 32L, 32R configured in this manner can also achieve the same effects as those described for the pair of reflected electron deflection members 30L, 30R described above. The pair of reflected electron deflection members 32L, 32R described above extend from the tip ends 42L, 42R of the pair of pole pieces 21L, 21R, but instead, they may extend from positions close to the tip ends 42L, 42R of the pair of pole pieces 21L, 21R.

[0064] Furthermore, in the above-described deposition electron gun apparatus 1, strip-shaped ferromagnetic bodies are used as the pair of reflected electron deflection members 30L, 30R. In contrast, the deposition electron gun apparatus 1C according to this modification includes a pair of reflected electron deflection members 33L, 33R provided with one or more protrusions (more specifically, magnetic field adjusting protrusions 34L, 34R) on the surfaces facing each other.

[0065] The pair of reflected electron deflection members 33L, 33R of the deposition electron gun apparatus 1C of this modified example, like the pair of reflected electron deflection members 30L, 30R described above, extend substantially parallel from a position relatively close to the tip ends 42L, 42R of the second connecting portions 44L, 44R of the pair of pole pieces 21L, 21R. As shown in FIG. 5A , one or more (two for each in FIG. 5A ) magnetic field adjusting protrusions 34L, 34R are provided on the opposing surfaces of the pair of reflected electron deflection members 33L, 33R, extending toward each other. The magnetic field adjusting protrusions 34L, 34R may be protrusions provided to adjust the direction and magnitude of the magnetic field generated around the pair of reflected electron deflection members 33L, 33R. The positions at which the magnetic field adjusting protrusions 34L, 34R are provided are not particularly limited, but they may be disposed in consideration of their function of deflecting reflected electrons RE. For example, the magnetic field adjusting projections 34L and 34R may be disposed at a position where the reflected electrons RE are reflected by the upper surface of the crucible 3, or behind this position.

[0066] The magnetic field adjusting projections 34L, 34R can change the magnitude and direction of the magnetic field generated around them, making it easier to adjust the generated magnetic field compared to a configuration without the magnetic field adjusting projections 34L, 34R. Furthermore, the pair of reflected electron deflection members 33L, 33R having such a configuration can also achieve the same effects as those described for the pair of reflected electron deflection members 30L, 30R described above.

[0067] Furthermore, the above-described deposition electron gun apparatus 1 exemplifies a pair of reflected electron deflection members 30L, 30R extending in the horizontal direction. In contrast, the deposition electron gun apparatus 1D according to this modification includes a pair of reflected electron deflection members 35L, 35R that extend from the base end toward the tip end in a direction away from the apparatus main body 10 and also away from the crucible 3 or in a direction toward the crucible 3.

[0068] The pair of reflected electron deflection members 35L, 35R of the evaporation electron gun apparatus 1D of this modified example extend linearly obliquely upward with respect to the horizontal plane, thereby extending in a direction away from the crucible 3 in the vertical direction. The inclination angle of the pair of reflected electron deflection members 35L, 35R with respect to the horizontal plane may be adjusted to, for example, −30° to 60°, more preferably 0° to 45°, as shown in FIG. 5B . The pair of reflected electron deflection members 35L, 35R having such a configuration can also achieve the same effects as those described for the pair of reflected electron deflection members 30L, 30R described above. While the pair of reflected electron deflection members 35L, 35R is illustrated as extending linearly, it is not necessarily required to be linear; for example, a portion of the member may be curved. Furthermore, when the pair of reflected electron deflection members 35L, 35R extend in a direction approaching the crucible 3, it is preferable to select an angle within a range in which the crucible 3 and the pair of reflected electron deflection members 35L, 35R do not come into contact with each other. Furthermore, when the height positions of the pair of reflected electron deflection members 35L, 35R and the height position of the upper end of the crucible 3 are close to each other and it is difficult to tilt the pair of reflected electron deflection members 35L, 35R at a desired angle, it is preferable to adjust the height of the detour portions 45L, 45R to increase the height of the tips of the pair of pole pieces 21L, 21R.

[0069] As described above, according to the deposition electron gun device of this embodiment and each of the modifications, the energy of the reflected electrons reflected from the target area can be reduced with a relatively simple configuration in which protrusions, more specifically, a pair of reflected electron deflection members, extend from a pair of pole pieces, thereby suppressing a decrease in the quality of the film deposition of the coated member due to the reflected electrons colliding with the surface of the coated member.

[0070] On the other hand, in vacuum evaporation systems, including existing evaporation electron guns, factors that degrade the quality of film deposition on coated components include factors other than the collision of reflected electrons with thin films. Specifically, for example, thin-film contamination can occur when evaporation material evaporated from the target area is deposited on components other than the coated component. This type of thin-film contamination is particularly likely to occur when a pole piece is located above the target area. This is presumably due to the evaporation material evaporating from the crucible adhering to and accumulating on the pole piece, then falling into or near the crucible and re-evaporating, or the deposited evaporation material being heated on the surface of the pole piece and re-evaporating. It has been found that the re-evaporated material may be different from the material in the crucible, or the re-evaporated material itself may be altered or its evaporation rate may be uncontrollable, thereby affecting film deposition quality.

[0071] In addition, evaporation of the evaporation material can occur not only in the target area but also in areas surrounding the target area that heat up and reach high temperatures as the target area heats up (hereinafter referred to as the "high-temperature area"). Therefore, the degradation of film formation quality due to the above-mentioned factors can be substantially avoided if pole pieces are not placed above the target area and the high-temperature area. However, deflecting the electron beam in the desired direction without placing pole pieces above the target area and the high-temperature area requires precise control of the magnetic field around the electron beam, which is not easy. Therefore, taking into account the above-mentioned factors of degradation of film formation quality, the evaporation electron gun device 1 according to this embodiment provides the above-mentioned bypass portions 45L and 45R on the pair of pole pieces 21L and 21R, thereby preventing the evaporation material from adhering to and accumulating on the pole pieces 21L and 21R.

[0072] In the present embodiment, the pair of pole pieces 21L, 21R have their tip ends 42L, 42R located relatively close to the target area TA in order to generate the most effective magnetic field around them for stably irradiating the electron beam EB onto the target area TA. On the other hand, detour sections 45L, 45R are employed to prevent the portions of the pole pieces 21L, 21R connecting the tip ends 42L, 42R and the base ends 41L, 41R from being located above the target area TA and the high-temperature area HA as much as possible.

[0073] As described above, the detour portions 45L, 45R provided on the pair of pole pieces 21L, 21R in this embodiment are provided between the base ends 41L, 41R and a position that reaches above the crucible 3. Furthermore, these detour portions 45L, 45R extend below the opening of the accommodation portion 3A of the crucible 3. Therefore, since the detour portions 45L, 45R are not located above the target area TA and the high-temperature area HA, the evaporation material 2 does not substantially adhere to them. Furthermore, the tips of the detour portions 45L, 45R are positioned away from the target area TA.

[0074] Because the tips of the detour portions 45L, 45R are positioned away from the target area TA, the extension portions 46L, 46R and the second connecting portions 44L, 44R that connect the detour portions 45L, 45R and the tips 42L, 42R can be routed away from the target area TA and the high-temperature area HA, as shown in Fig. 2. This makes it possible to prevent the evaporated evaporation material 2 from adhering to the extension portions 46L, 46R and the second connecting portions 44L, 44R.

[0075] As described above, according to the deposition electron gun apparatus 1 of this embodiment, by forming the detour portions 45L, 45R in parts of the pair of pole pieces 21L, 21R, the pair of pole pieces 21L, 21R can be disposed at positions separated from the target area TA. This makes it possible to significantly reduce adhesion of evaporation material to the pole pieces, and to suppress contamination of the thin film, compared to the conventional case in which the pole pieces extend linearly from the base end to the top of the crucible 3.

[0076] The pair of pole pieces of the present disclosure are not limited to those having the shape of the pair of pole pieces 21L and 21R described above. Therefore, several modified pole pieces included in the present disclosure will be described below. Note that the modified pole pieces described below are similar to those of the first embodiment described above, except for the structure of the pair of pole pieces. Therefore, the same reference numerals will be used to designate structures similar to those of the above embodiment, and their description will be omitted, and the following description will focus on the differences.

[0077] Fig. 6 is a diagram showing a modified example of the pole pieces of the deposition electron gun device shown in Fig. 1. For example, in the deposition electron gun device 1E according to this modified example, a pair of pole pieces 50L and 50R, each of which is partially curved in an arc shape, as shown in Fig. 6A can be used instead of the pair of pole pieces 21L and 21R described above.

[0078] The pair of pole pieces 50L, 50R of the deposition electron gun apparatus 1E of this modified example can be configured as strip-shaped members made of a ferromagnetic material and having a predetermined thickness, similar to the pole pieces 21L, 21R described above. As shown in FIG. 6A , the pair of pole pieces 50L, 50R are spaced apart from each other so as to be symmetrical with respect to the line L. Furthermore, the pair of pole pieces 50L, 50R have base ends 51L, 51R attached to the apparatus body 10, and tip ends 52L, 52R disposed above the crucible 3 and behind the target area TA as viewed from the apparatus body 10. Additionally, first connecting portions 53L, 53R and second connecting portions 54L, 54R are disposed between the base ends 51L, 51R and the tip ends 52L, 52R.

[0079] Similar to the above-described base ends 41L and 41R, the base ends 51L and 51R may be disposed on either side of the window 13 on the housing 11, and may be connected to the magnetic source 22. Similarly to the above-described tip ends 42L and 42R, the tip ends 52L and 52R may be disposed at a predetermined distance behind the target area TA in the front-to-rear direction.

[0080] The first connecting portions 53L, 53R constitute portions of the pair of pole pieces 50L, 50R that extend in a direction away from the device body 10. In this embodiment, the first connecting portions 53L, 53R are composed of detour portions 55L, 55R that are connected to the base ends 51L, 51R and extend in an arc shape in a plan view, and extension portions 56L, 56R that extend in an arc shape from the tips of the detour portions 55L, 55R in the same way as the detour portions 55L, 55R. The detour portions 55L, 55R and the extension portions 56L, 56R extend in an arc shape outside the crucible 3 along the outer edge of the crucible 3, and extend mainly in the left-right direction away from the target area TA. Furthermore, it is preferable that at least a portion of the detouring portions 55L, 55R and the extending portions 56L, 56R in the vertical direction extends below the opening of the accommodation portion 3A of the crucible 3.

[0081] The second connecting portions 54L, 54R may extend in the left-right direction to connect the other ends of the first connecting portions 53L, 53R to the tip portions 52L, 52R, similar to the second connecting portions 44L, 44R described above.

[0082] In the deposition electron gun apparatus 1E of the above modification, by providing the pair of pole pieces 50L, 50R with the first connecting portions 53L, 53R including the detour portions 55L, 55R, it is possible to achieve a structure in which most of the pair of pole pieces 50L, 50R are not disposed above the target area TA and the high-temperature area HA. ​​This makes it possible to significantly reduce adhesion of the evaporation material to the pole pieces, and to suppress contamination of the thin film, compared to conventional cases in which the pole pieces extend linearly from the base end to the tip end.

[0083] In the above-described deposition electron gun apparatus 1, the first connecting portions 43L, 43R and the second connecting portions 44L, 44R of the pair of pole pieces 21L, 21R are connected to form an L-shape in plan view, as an example. In contrast, the deposition electron gun apparatus 1F according to this modified example employs a pair of pole pieces 60L, 60R that include connecting portions that are bent at multiple locations, as shown in FIG.

[0084] The pair of pole pieces 60L, 60R of the deposition electron gun apparatus 1F of this modified example are similar to the pair of pole pieces 21L, 21R described above, except for the structures of the first connecting portions 63L, 63R and the second connecting portions 64L, 64R. That is, the pair of pole pieces 60L, 60R can be formed of strip-shaped members made of a ferromagnetic material and having a predetermined thickness, and are arranged at a distance from each other so as to be symmetrical with respect to the line L. Furthermore, the pair of pole pieces 60L, 60R have their base ends 61L, 61R attached to the apparatus body 10, and their tip ends 62L, 62R disposed above the crucible 3 and behind the target area TA as viewed from the apparatus body 10, and the detour portions 65L, 65R of the first connecting portions 63L, 63R extend from the base ends 61L, 61R in a direction away from the target area TA, specifically along the left-right direction.

[0085] As shown in FIG. 6B , the first connecting portions 63L, 63R of the pair of pole pieces 60L, 60R are similar to the first connecting portions 43L, 43R in that one end forms a detour portion 65L, 65R, and the other end forms an extension portion 66L, 66R extending along the front-rear direction, but the length of the extension portion 66L, 66R is set shorter than the extension portion 46L, 46R. The second connecting portions 65L, 65R have the other end extending along the left-right direction and connected to the tip portions 62L, 62R, and one end extending obliquely across the annular evaporation material 2 and connected to the other end of the first connecting portion 64L, 64R. This makes the pair of pole pieces 60L, 60R more compact than the pair of pole pieces 21L, 21R described above.

[0086] In the deposition electron gun apparatus 1F of this modified example, by providing the pair of pole pieces 60L, 60R with the first connecting portions 63L, 63R including the detour portions 65L, 65R, it is possible to achieve a structure in which most of the pair of pole pieces 60L, 60R are not disposed above the target area TA and the high-temperature area HA. ​​This makes it possible to significantly reduce adhesion of the evaporation material to the pole pieces, and to suppress contamination of the thin film, compared to conventional cases in which the pole pieces extend linearly from their base ends.

[0087] Second Embodiment In the first embodiment described above, an example has been given in which a deterioration in film formation quality caused by the deposition material adhering to a pair of pole pieces is also suppressed in addition to a deterioration in film formation quality caused by the deposition material colliding with the coated member by the reflected electrons RE, but the present disclosure is not limited to a device that can suppress both of the above-mentioned deteriorations in film formation quality. Therefore, hereinafter, a description will be given of an evaporation electron gun device 5 that can solve the cause of the deterioration in film formation quality caused by the deposition material adhering to a pair of pole pieces, among the causes of the deterioration in film formation quality described above.

[0088] Fig. 7 is a schematic perspective view showing an example of an evaporation electron gun device according to a second embodiment of the present disclosure. Fig. 8 is a plan view of the evaporation electron gun device shown in Fig. 7. As shown in Figs. 7 and 8, the evaporation electron gun device 5 according to this embodiment may have a configuration similar to that of the evaporation electron gun device 1 according to the first embodiment described above, except that it does not have the reflected electron deflection members 30L and 30R. Therefore, for the specific structure of each part of the evaporation electron gun device 5, please refer to the explanation of the structure of each part of the evaporation electron gun device 1 as appropriate.

[0089] The deposition electron gun device 5 according to this embodiment can be employed as part of the above-mentioned vacuum deposition device. As shown in FIGS. 7 and 8 , the deposition electron gun device 5 is disposed adjacent to the crucible 3 and irradiates the evaporation material 2 contained in the crucible 3 with an electron beam EB.

[0090] The deposition electron gun device 5 includes at least an apparatus main body 10, at least a part of which is installed on the side of the crucible 3, and electron beam deflection means 20 that guides the electron beam EB irradiated from the apparatus main body 10 to a target area TA set in the crucible 3. Of these, the electron beam deflection means 20 includes at least a pair of pole pieces 21L, 21R that generate a magnetic field around it, and a magnetic source 22.

[0091] The pair of pole pieces 21L, 21R have base ends 41L, 41R installed in the apparatus body 10, and tip ends 42L, 42R disposed above the crucible 3 and behind the target area TA as viewed from the apparatus body 10, and include detour portions 45L, 45R extending in a direction away from the target area TA in at least a portion between the base ends 41L, 41R and a position above the crucible 3. In addition, the present embodiment illustrates an example in which one end of the detour portions 45L, 45R is connected to the base ends 41L, 41R, and the other end is connected to the tip ends 42L, 42R via extension portions 46L, 46R and second connecting portions 44L, 44R.

[0092] In the deposition electron gun device 5 according to this embodiment, as in the deposition electron gun device 1 according to the first embodiment, the pair of pole pieces 21L, 21R include the detour portions 45L, 45R, so that the pair of pole pieces 21L, 21R can be disposed at positions separated from the target area TA and the high-temperature area HA. ​​This makes it possible to significantly reduce adhesion of evaporation material to the pole pieces, and to suppress contamination of the thin film, compared to the conventional case in which the pole pieces extend linearly from their base ends.

[0093] Furthermore, the specific shape of the pair of pole pieces 21L, 21R of the deposition electron gun device 5 according to this embodiment can be changed to, for example, a shape similar to the pair of pole pieces 50L, 50R according to the above-mentioned modified example or the pair of pole pieces 60L, 60R according to another modified example, but the shape of the pair of pole pieces of the deposition electron gun device 5 according to this embodiment is not limited to these.

[0094] Fig. 9 is a diagram showing a modified example of the pole pieces of the deposition electron gun device shown in Fig. 7. For example, as shown in Fig. 9, the deposition electron gun device 5A according to this modified example employs a pair of pole pieces 70L and 70R, parts of which are routed around the outer periphery of the crucible 3, instead of the pair of pole pieces 21L and 21R described above.

[0095] The pair of pole pieces 70L, 70R of the deposition electron gun apparatus 5A of this modified example can be configured as strip-shaped members made of a ferromagnetic material and having a predetermined thickness, similar to the pole pieces 21L, 21R described above. As shown in FIG. 9 , the pair of pole pieces 70L, 70R are spaced apart from each other so as to be symmetrical with respect to the line L. Furthermore, the pair of pole pieces 70L, 70R have base ends 71L, 71R attached to the apparatus body 10, and tip ends 72L, 72R disposed above the crucible 3 and behind the target area TA as viewed from the apparatus body 10. Additionally, first connecting portions 73L, 73R and second connecting portions 74L, 74R are disposed between the base ends 71L, 71R and the tip ends 72L, 72R.

[0096] Similar to the above-described base ends 41L, 41R, the base ends 71L, 71R may be disposed on either side of the window 13 on the housing 11, and may be connected to the magnetic source 22. Similarly to the above-described tip ends 42L, 42R, the tip ends 72L, 72R may be disposed at a predetermined distance behind the target area TA in the front-to-rear direction.

[0097] The first connecting portions 73L, 73R include detour portions 75L, 75R and extending portions 76L, 76R. As shown in Fig. 9, one end of the detour portions 75L, 75R is connected to the base ends 71L, 71R, and extends from the one end so as to be separated from each other in a direction intersecting the straight line L, specifically, in the left-right direction. Furthermore, it is preferable that at least a portion of the detour portions 75L, 75R extend downward in the up-down direction below the opening of the accommodation portion 3A of the crucible 3.

[0098] The extension portions 76L, 76R and the second connecting portions 74L, 74R extend to connect the tips of the detour portions 75L, 75R to the tip portions 52L, 52R. Specifically, the extension portions 76L, 76R extend across the crucible 3 in the front-to-rear direction. The second connecting portions 74L, 74R extend from the tips of the extension portions 76L, 76R in the left-to-right direction toward each other, and then extend along the front-to-rear direction toward the tip portions 72L, 72R. As can be seen from FIG. 9 , portions of the second connecting portions 75L, 75R according to this modification can function similarly to the pair of reflected electron deflection members 30L, 30R described in the first embodiment.

[0099] In the above-described modified deposition electron gun apparatus 5A, by providing the detouring portions 75L, 75R in the pair of pole pieces 70L, 70R, it is possible to achieve a structure in which most of the pair of pole pieces 70L, 70R are not disposed above the target area TA and the high-temperature area HA. ​​This makes it possible to significantly reduce adhesion of the evaporation material to the pole pieces, and to suppress contamination of the thin film, compared to the conventional case in which the pole pieces extend linearly from their base ends.

[0100] In the above-described embodiments, several modified shapes of the pole pieces and the reflected electron deflection members are exemplified, but these modified shapes are merely examples, and it is not intended that the shape of the pole pieces be limited to those shown as modified shapes. Therefore, the shape of the pole pieces can be changed to shapes other than those shown as modified shapes within the scope in which the functions of each component can be maintained.

[0101] <Third embodiment> Fig. 10 is a schematic perspective view showing an example of an evaporation electron gun device according to a third embodiment of the present disclosure. Fig. 11 is a plan view of the evaporation electron gun device shown in Fig. 10. Fig. 12 is a side view of the evaporation electron gun device shown in Fig. 10.

[0102] The deposition electron gun device 100 according to this embodiment can be employed as part of a vacuum deposition device, similar to the above-described deposition electron gun device 1. Furthermore, some of the components of the deposition electron gun device 100 can be similar to those of the above-described deposition electron gun device 1.

[0103] 10 to 12 , the evaporation electron gun device 100 according to this embodiment may be an device that is disposed adjacent to a crucible 103 and that irradiates an electron beam EB onto an evaporation material 102 contained in the crucible 103. The evaporation material 102, the crucible 103, and the container 103A for the crucible 103 may have the same configurations as the evaporation material 2, the crucible 3, and the container 3A of the evaporation electron gun device 1 described above.

[0104] The above-mentioned electron gun apparatus 100 for vapor deposition includes at least an apparatus main body 110, at least a portion of which is installed to the side of the crucible 103, and an electron beam deflection means 120 that guides the electron beam EB irradiated from the apparatus main body 110 to a target area TA set in the crucible 103.

[0105] The apparatus body 110 may include a housing 111, an electron beam source 112, and a window portion 113, similar to the apparatus body 10 of the above-described deposition electron gun apparatus 1. The configuration of each portion of the apparatus body 110 described above may be the same as that of the first embodiment.

[0106] The electron beam deflection means 120 deflects the electron beam EB generated in the apparatus main body 110 and emitted outside the housing 111, and guides the electron beam EB to a target area TA set in the crucible 103. The electron beam deflection means 120 includes at least a pair of pole pieces 121L, 121R. The pair of pole pieces 121L, 121R are capable of guiding the electron beam EB to the target area TA by generating a magnetic field around them. The electron beam deflection means 120 may further include a magnetic source 122 for generating a magnetic field around the pair of pole pieces 121L, 121R. Of these, the magnetic source 122 may be the same as the magnetic source 22 described above.

[0107] The pair of pole pieces 121L, 121R can be configured as strip-shaped members made of a ferromagnetic material and having a predetermined thickness. The pair of pole pieces 121L, 121R may be arranged so as to sandwich a straight line L therebetween. More preferably, the pair of pole pieces 121L, 121R may be arranged with a gap between them so as to be symmetrical with respect to the straight line L.

[0108] One of the factors that can degrade the quality of a coating produced in a vacuum deposition apparatus, including an existing electron gun for deposition, is thin-film contamination, which occurs when evaporation material from the target region is deposited on a component other than the coating material. This type of thin-film contamination is particularly likely to occur when a pole piece is disposed above the target region. This is thought to occur because the evaporation material from the crucible adheres to and deposits on the pole piece, then falls into or near the crucible and re-evaporates, or the deposited evaporation material is heated on the surface of the pole piece and re-evaporates. It has been found that the re-evaporated material may be different from the material in the crucible, or the re-evaporated material itself may be altered or its evaporation rate may be uncontrollable, thereby affecting the quality of the coating.

[0109] In addition, evaporation of the evaporation material may occur not only in the target area but also in a high-temperature area located around the target area that heats up as the target area heats up. Therefore, the deterioration of film formation quality due to the above-mentioned factors can be substantially avoided if pole pieces are not placed above the target area and the high-temperature area. However, in order to deflect the electron beam in a desired direction without placing pole pieces above the target area and the high-temperature area, it is necessary to accurately control the magnetic field around the electron beam, which is not easy.

[0110] In the pair of pole pieces 121L, 121R in this embodiment, in order to generate the most effective magnetic field for stably irradiating the electron beam EB onto the target area TA, the tip portions 132L, 132R are arranged in a position relatively close to the target area TA, more specifically, behind the target area TA as seen from the device body 110. On the other hand, in consideration of the above-mentioned viewpoint of contamination, the portions of the pair of pole pieces 121L, 121R other than the tip portions 132L, 132R have a structure that is bent in a substantially L-shape in a plan view so as to pass through a position relatively distant from the target area TA and the high temperature area HA.

[0111] More specifically, the pair of pole pieces 121L, 121R includes at least base ends 131L, 131R installed in the device body 110, tip ends 132L, 132R disposed above the crucible 103 and behind the target area TA as seen from the device body 110, first connecting portions 133L, 133R extending from the base ends 131L, 131R in a direction away from the device body 110, and a connecting portion between the end of the first connecting portions 133L, 133R and the tip. It includes second connecting portions 134L, 134R that connect the end portions 132L, 132R and extend in a second direction (e.g., left-right direction) that intersects with a first direction (e.g., front-to-back direction) along a straight line L that connects the device main body 110 and the target area TA, and protruding pieces that extend in a direction away from the target area TA from at least a portion of the tip portions 132L, 132R, the first connecting portions 133L, 133R and the second connecting portions 134L, 134R.

[0112] Similar to the base ends 41L and 41R, the base ends 131L and 131R may be disposed at positions sandwiching the window portion 113 on the housing 111. The magnetic source 122 may be connected to the base ends 131L and 131R. Furthermore, it is preferable that the base ends 131L and 131R are positioned below the opening of the accommodation portion 103A of the crucible 3, since they are substantially not exposed to the evaporation material 102 evaporated from the crucible 103.

[0113] Similar to the tip portions 42L, 42R, the tip portions 132L, 132R may be disposed so as to face each other at a predetermined distance behind the target area TA in the front-to-rear direction. The shape of the tip portions 132L, 132R is preferably such that at least a portion of the facing end faces approach each other from the front to the rear in a plan view, as shown in Figures 10 and 11 , so that the direction of the magnetic field formed around the tip portions 132L, 132R is directed toward the target area TA.

[0114] The first connecting portions 133L, 133R constitute at least a portion of the pair of pole pieces 121L, 121R extending from the base ends 131L, 131R in a direction away from the device body 110. The first connecting portions 133L, 133R may constitute a portion of the pair of pole pieces 121L, 121R extending generally along the front-rear direction from the device body 110 toward the crucible 103. The first connecting portions 133L, 133R in this embodiment are constituted by detour portions 135L, 135R connected to the base ends 131L, 131R, and extension portions 136L, 136R extending substantially linearly from the detour portions 135L, 135R in a direction approaching the crucible 103.

[0115] The detour portions 135L, 135R can be provided at appropriate locations between the base ends 131L, 131R and positions that reach above the crucible 103, in other words, positions that overlap the crucible 103 in a plan view. As shown in Figures 10 and 11, the detour portions 135L, 135R of this embodiment have one end connected to the base ends 131L, 131R, and extend from the one end in a direction that intersects with the above-mentioned straight line L, specifically in the left-right direction, so as to move away from each other. Furthermore, it is preferable that at least a portion of the detour portions 135L, 135R extend downward below the opening of the accommodation portion 103A of the crucible 103. By including the above-mentioned detouring portions 135L, 135R in the pole pieces 121L, 122R, it becomes possible to easily route most of the pole pieces 121L, 122R to positions away from the target area TA and the upper part of the high-temperature area HA. ​​This allows most of the pole pieces 121L, 121R to be disposed at positions away from the target area TA, thereby preventing the evaporation material from adhering to and accumulating on the pole pieces 121L, 121R. Note that the detouring portions 135L, 135R of the first connecting portions 133L, 133R can be omitted, for example, when the housing 111 is sufficiently large in the left-right direction.

[0116] The extending portions 136L, 136R may have one end connected to one end of the detour portions 135L, 135R, and may extend linearly from one end of the detour portions 135L, 135R to a position where the other end passes through the target area TA in the front-to-rear direction. In this embodiment, the extending portions 136L, 136R extend in a direction substantially parallel to the straight line L. Note that the shape of the extending portions 136L, 136R may not be linear as described above, but may be bent or curved at one or more locations. Furthermore, the extending direction of the extending portions 136L, 136R may extend in a direction different from the extending direction of the straight line L.

[0117] The second connecting portions 134L, 134R connect the ends of the first connecting portions 133L, 133R and the tip portions 132L, 132R of the pair of pole pieces 121L, 121R, and form a portion that extends in a second direction, for example, the left-right direction, that intersects with a first direction along the straight line L, for example, the front-to-back direction.

[0118] As shown in Figures 10 and 11, the second connecting portions 134L, 134R in this embodiment are formed of wide members with a relatively long length in the front-rear direction. Specifically, the length W1 of the second connecting portions 134L, 134R in the front-rear direction is longer rearward as viewed from the device main body 110 than the length W2 of the tip portions 132L, 132R in the front-rear direction. In relation to this, a step 138 is formed at the connecting portion of the second connecting portions 134L, 134R behind the tip portions 132L, 132R. The portions of the second connecting portions 134L, 134R that extend rearward beyond the rear ends of the tip portions 132L, 132R constitute reflected electron deflection portions 137L, 137R, which are examples of protruding pieces that protrude from the second connecting portions 134L, 134R in a direction away from the target area TA. The specific functions of the reflected electron deflection units 137L, 137R will be described later. Note that, in the present embodiment, the second connecting units 134L, 134R have been exemplified as having the same length in the front-rear direction over their entire length in the left-right direction, but the lengths of the second connecting units 134L, 134R in the front-rear direction do not have to be the same. In other words, the lengths of the second connecting units 134L, 134R in the front-rear direction may differ depending on the left-right position.

[0119] In the deposition electron gun apparatus 100 according to this embodiment, the electron beam EB emitted from the apparatus main body 110 is deflected in a desired direction by the action of the electron beam deflection means 120 including the above-described configuration. Specifically, as shown in FIG. 12 , when the electron beam EB is emitted from the electron beam source 112, it passes through the window portion 113 of the apparatus main body 110, and then its traveling direction is deflected by 180 to 270 degrees by the electron beam deflection means 120, and is then irradiated onto the target area TA. The evaporation material 102 located in the target area TA irradiated with the electron beam EB is heated and melted by the electron beam EB, vaporizes, and is evaporated onto the surface of a substrate serving as a coating member previously placed above the target area TA, thereby forming a thin film.

[0120] Here, in a vacuum deposition apparatus including an existing deposition electron gun device, another factor that reduces the quality of the film formed on the coating member is the collision of reflected electrons reflected by the evaporation material with a thin film (more specifically, the evaporated film) on the coating member. Specifically, reflected electrons, which are part of the electron beam irradiated on the evaporation material but are not absorbed by the evaporation material, collide with the surface of a substrate serving as a coating member placed above the evaporation material, and the thin film at the collision site may be destroyed or deformed. Such destruction or deformation is caused by the impact of the reflected electrons colliding with the thin film or by heat generated when the reflected electrons collide. In this embodiment, the shape of the pair of pole pieces 121L, 121R is devised to suppress the degradation of film formation quality due to the above-mentioned reflected electrons.

[0121] The deposition electron gun apparatus 100 according to this embodiment employs a structure in which the second connecting portions 134L, 134R are formed wide and provided with the reflected electron deflection portions 137L, 137R, as described above, in order to deflect mainly the reflected electrons RE that are reflected rearward of the target area TA among the reflected electrons RE that emerge from the target area TA. The reflected electron deflection portions 137L, 137R are formed as part of the second connecting portions 134L, 134R of the pair of pole pieces 121L, 121R, and extend in a direction away from the apparatus main body 110. When the reflected electron deflection portions 137L, 137R are magnetized by the magnetic source 122, a magnetic field can also be generated behind the tip portions 132L, 132R.

[0122] Furthermore, a distance L1 larger than the distance between the tip ends 132L and 132R may be formed between the reflected electron deflection units 137L and 137R. The distance L1 between the reflected electron deflection units 137L and 137R can be adjusted as appropriate, taking into consideration, for example, the width of the target area TA in the left-right direction and the magnitude of the magnetic field generated between the reflected electron deflection units 137L and 137R. Note that, although Figure 11 and other figures illustrate an example in which the opposing surfaces of the reflected electron deflection units 137L and 137R are substantially parallel, the opposing surfaces do not have to be parallel.

[0123] The magnetic field generated by the reflected electron deflection units 137L and 137R mainly acts to deflect downward most of the reflected electrons RE that are reflected by the electron beam EB irradiated onto the target area TA and fly upward. As shown in FIG. 12 , the reflected electrons RE deflected by the magnetic field generated by the reflected electron deflection units 137L and 137R fly upward from within the target area TA, then travel backward and downward so as to approach the upper surface of the crucible 103, moving so as to collide with any position on the crucible 103 one or more times. Each time the reflected electrons RE collide with the crucible 103, a portion of the reflected electrons RE is absorbed by the crucible 103. Thereafter, the same operation can be repeated one or more times.

[0124] As described above, in the deposition electron gun apparatus 100 according to this embodiment, the wide shape of the second connecting portions 134L and 134R allows a downward magnetic field to act on the reflected electrons RE that are emitted from the target area TA and reflected backward. This allows the reflected electrons RE to collide multiple times with components separate from the substrate, such as the crucible 103, thereby reducing their energy. Reducing the energy of the reflected electrons RE, which are part of the electron beam EB, prevents the reflected electrons RE from reaching the substrate, thereby avoiding or significantly reducing degradation of the film formation quality on the substrate due to the reflected electrons RE. Note that, in this embodiment as well, the above-described cover member can be provided on the top surface of the crucible 103.

[0125] The reflected electron deflection units 137L and 137R described above are primarily intended to apply a magnetic field to the reflected electrons RE reflected to the rear of the target area TA, but the reflected electrons RE may also be reflected in a direction other than the rear of the target area TA. For example, if a portion of the electron beam EB irradiated onto the target area TA is diffusely reflected, the reflected electrons RE may fly out in a direction other than the rear of the target area TA, for example, in the left-right direction. In the deposition electron gun apparatus 100 according to this embodiment, the magnetic field generated around the extension units 136L and 136R can be used to deflect the reflected electrons RE flying out in the left-right direction.

[0126] The magnetic field generated around the extensions 136L and 136R mainly acts to deflect downward the reflected electrons RE that are reflected in the left and right directions among the reflected electrons RE that are scattered and fly upward from the electron beam EB irradiated onto the target area TA. This action allows the scattered reflected electrons RE in the target area TA to collide with the crucible 103 and the like multiple times, thereby reducing their energy.

[0127] The magnetic field generated around the first connecting portions 133L and 133R depends on the magnetic field generated at the tip portions 132L and 132R. On the other hand, when deflecting the reflected electrons RE diffusely reflected from the target area TA, a stronger magnetic field generated around the first connecting portions 133L and 133R is preferable in terms of reducing the energy of the reflected electrons RE. Therefore, the following describes a deposition electron gun apparatus 100A according to a first modification of the third embodiment, which incorporates modifications taking the above points into consideration. Note that the components of the deposition electron gun apparatus 100A according to the first modification described below may be similar to the components of the deposition electron gun apparatus 100 according to the third embodiment, except for the partial shape of the pair of pole pieces 121LA and 121RA. Therefore, the following description will focus on the components that are different from those of the third embodiment, with the same reference numerals used to designate components similar to those of the deposition electron gun apparatus 100 according to the third embodiment.

[0128] FIG. 13 is a schematic perspective view showing a first modification of the deposition electron gun apparatus shown in FIG. 10 . In the deposition electron gun apparatus 100A according to this modification, as shown in FIG. 13 , the magnetic field generated around the pair of pole pieces 121LA and 121RA constituting the electron beam deflection means 120A is adjusted. More specifically, the magnitude of the magnetic field around the first connecting portions 133LA and 133RA is adjusted by adjusting the cross-sectional area of ​​the first connecting portions 133LA and 133RA of the pair of pole pieces 121LA and 121RA. In this modification, the aforementioned cross-sectional area adjustment is achieved by making the thickness of at least a portion of the first connecting portions 133LA and 133RA along the third direction thicker than the thickness of the tip portions along the third direction. Note that the aforementioned third direction corresponds to the up-down direction.

[0129] More specifically, in the deposition electron gun apparatus 100A according to this modification, the base ends of the extending portions 136LA, 136RA of the first connecting portions 133LA, 133RA and the second connecting portions 134LA, 134RA have thicknesses in the vertical direction that are thicker than the other portions including the tip portions 132L, 132R. Note that the thicknesses in the vertical direction of the base ends of the extending portions 136LA, 136RA and the second connecting portions 134LA, 134RA described above may be adjusted as appropriate depending on the magnitude of the magnetic field to be generated.

[0130] In the deposition electron gun apparatus 100A including the pair of pole pieces 121LA, 121RA as described above, the magnetic field generated around the extension portions 136LA, 136RA can be made stronger than the magnetic field generated around other portions.

[0131] In the first modified example described above, the thickness of the first connecting portions 133LA and 133RA is adjusted to adjust the magnetic field generated around the first connecting portions 133LA and 133RA, but the same effect can be obtained by increasing the cross-sectional area of ​​the first connecting portions 133LA and 133RA. Therefore, the same effect can be obtained by, for example, increasing the width of the first connecting portions 133LA and 133RA in the left-right direction.

[0132] In the first modified example described above, the thickness of the first connecting portions 133LA and 133RA is adjusted to effectively deflect reflected electrons RE that are scattered from the target area TA mainly in the left-right direction. Below, a deposition electron gun device 100B, in which the shape of the pair of pole pieces is further improved, will be described as a second modified example of the third embodiment described above. Note that, as with the first modified example, the components of the deposition electron gun device 100B according to the second modified example described below may be similar to the components of the deposition electron gun device 100 according to the third embodiment described above, except for the partial shape of the pair of pole pieces 121LB and 121RB. Therefore, the following description will focus on the components that are different from those of the third embodiment, with the same reference numerals used to designate components similar to those of the deposition electron gun device 100 according to the third embodiment.

[0133] 14 is a schematic perspective view showing a second modification of the deposition electron gun apparatus shown in FIG. 10. As shown in FIG. 14, the deposition electron gun apparatus 100B according to this modification employs magnetic field adjustment pieces for adjusting the magnetic field at appropriate positions of a pair of pole pieces 121LB, 121RB constituting the electron beam deflection means 120B. Specifically, the pair of pole pieces 121LB, 121RB further includes one or more magnetic field adjustment pieces (e.g., magnetic field adjustment pieces 141L, 141R, 142L, and 142R described below) extending in a direction away from the target area TA from the portion where the second connecting portions 134LB, 134RB are connected to the first connecting portions 133LB, 133RB. The aforementioned magnetic field adjustment pieces are an example of protruding pieces.

[0134] In this modified example, the one or more magnetic field adjustment pieces described above are exemplified by first magnetic field adjustment pieces 141L, 141R extending rearward from the ends of the second connecting portions 134LB, 134RB, and second magnetic field adjustment pieces 142L, 142R extending outward from the ends of the second connecting portions 134LB, 134RB toward the outside of a pair of pole pieces 121LB, 121RB along the left-right direction.

[0135] The first magnetic field adjustment pieces 141L, 141R function to adjust the magnetic field in the rear region of the second connecting portions 134LB, 134RB, and mainly deflect reflected electrons RE that fly out to the left rear and right rear from the target area TA. The second magnetic field adjustment pieces 142L, 142R function to adjust the magnetic field in the outer region of the pair of pole pieces 121LB, 121RB, and mainly deflect reflected electrons RE that fly out to the left and right from the target area TA. The lengths along the extension direction and cross-sectional areas of the first magnetic field adjustment pieces 141L, 141R and the second magnetic field adjustment pieces 142L, 142R may be adjusted taking into account the magnitude and range of the magnetic field generated around each magnetic field adjustment piece.

[0136] As in this modification, by providing magnetic field adjusting pieces 141L, 141R, 142L, 142R extending in desired directions from a pair of pole pieces 121LB, 121RB, it becomes possible to adjust the magnetic field around the pole pieces 121LB, 121RB over a wide range, thereby effectively reducing the energy of reflected electrons RE and significantly preventing a decrease in the quality of film formation on a substrate due to collisions with reflected electrons.

[0137] In the second modified example described above, the first magnetic field adjustment pieces 141L, 141R and the second magnetic field adjustment pieces 142L, 142R are exemplified as magnetic field adjustment pieces, but only one of these magnetic field adjustment pieces may be used. Furthermore, the shape of the magnetic field adjustment pieces is not limited to linear extension, and they may be bent or curved at one or more points. Furthermore, the technical features described in the first and second modified examples described above may be used in combination.

[0138] Fourth Embodiment In the second modified example described above, magnetic field adjustment pieces 141L, 141R, 142L, and 142R are used in a pair of pole pieces including the reflected electron deflection units 137L and 137R. However, the present disclosure is not limited to this example. Therefore, as a fourth embodiment of the present disclosure, a deposition electron gun apparatus 100C including a pair of pole pieces including magnetic field adjustment pieces but not including the reflected electron deflection units 137L and 137R will be described below. Note that the deposition electron gun apparatus 100C according to this embodiment may have the same configuration as that shown in the second modified example or the third embodiment, except for the configuration of the second connecting unit. Therefore, the following description will focus on differences from the third embodiment or the second modified example, and configurations not described will be considered to be the same as those shown in the third embodiment or the second modified example.

[0139] 15 is a schematic perspective view showing an example of an evaporation electron gun apparatus according to a fourth embodiment of the present disclosure. As shown in FIG. 15 , the evaporation electron gun apparatus 100C according to this embodiment includes an apparatus main body 110 including an electron beam source 112 and installed to the side of a crucible 103 that is open at the top and contains an evaporation material 102 to be evaporated onto a coating member, and a pair of pole pieces 121LC, 121RC that guide the electron beam EB emitted from the apparatus main body 110 to a target area TA set in the crucible 103. The configuration of the apparatus main body 110 may be the same as that of the third embodiment. Furthermore, the pair of pole pieces 121LC, 121RC may be similar to the pair of pole pieces 121L, 121R of the third embodiment in that they include base ends 131L, 131R installed on the device main body 110, tip ends 132L, 132R arranged above the crucible 103 and behind the target area TA, first connecting portions 133LC, 133RC extending in a direction approaching the tip ends 132L, 132R from the base ends 131L, 131R, and second connecting portions 134LC, 134RC connecting the ends of the first connecting portions 133LC, 133RC to the tip ends 132L, 132R and extending in the left-right direction.

[0140] On the other hand, the pair of pole pieces 121LC, 121RC of this embodiment are not particularly limited in the length in the front-rear direction of the second connecting portions 134LC, 134RC. Therefore, the length in the front-rear direction of the second connecting portions 134LC, 134RC may be adjusted to be substantially the same as the length in the front-rear direction of the tip portions 132L, 132R, as shown in FIG. 15 . Therefore, the second connecting portions 134LC, 134RC of this embodiment do not substantially need to include the reflected electron deflection portions 137L, 137R of the third embodiment described above.

[0141] In addition, the pair of pole pieces 121LC, 121RC in this embodiment include one or more magnetic field adjustment pieces as an example of protrusions extending in a direction away from the target area TA from the portion where the second connecting portion 134LC, 134RC and the end of the first connecting portion 133LC, 133RC are connected.

[0142] 15, the magnetic field adjustment pieces in this embodiment are similar to those shown in the second modified example described above, that is, first magnetic field adjustment pieces 141L, 141R that adjust the magnetic field in the rear region of the second connecting portions 134LC, 134RC, and second magnetic field adjustment pieces 142L, 142R that adjust the magnetic field in the outer region of the pair of pole pieces 121LC, 121RC. Therefore, these first magnetic field adjustment pieces 141L, 141R and second magnetic field adjustment pieces 142L, 142R can deflect reflected electrons RE that fly out toward the rear of the second connecting portions 134LC, 134RC and toward the outside of the pair of pole pieces 121LC, 121RC.

[0143] As described above, the deposition electron gun apparatus 100C according to this embodiment can adjust the magnetic field around the pole pieces 121LC and 121RC, including around the bases of the second connecting portions 134LC and 134RC, over a wide range. This allows the reflected electrons RE to collide multiple times with components separate from the substrate, such as the crucible 103, thereby reducing their energy. Reducing the energy of the reflected electrons RE, which are part of the electron beam EB, can prevent the reflected electrons RE from reaching the substrate, thereby avoiding or significantly reducing degradation of the film formation quality on the substrate due to the reflected electrons RE.

[0144] The present disclosure is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit and scope of the present disclosure, all of which are included in the technical concept of the present disclosure.

[0145] All references, including publications, patent applications, and patents, cited in this specification are herein incorporated by reference to the same extent as if each reference was individually and specifically indicated to be incorporated by reference and set forth herein in its entirety.

[0146] The use of nouns and similar referents in connection with the description of this disclosure (particularly in connection with the claims that follow) shall be construed to cover both the singular and the plural, unless otherwise indicated herein or clearly contradicted by context. The words "comprises," "has," "includes," and "comprises" shall be construed as open-ended terms (i.e., meaning "including, but not limited to"), unless otherwise noted. The recitation of numerical ranges herein is merely intended to serve as a shorthand method for referring individually to each value falling within the range, unless otherwise indicated herein, and each value is incorporated into the specification as if it were individually recited herein. All methods described herein can be performed in any suitable order unless otherwise indicated herein or clearly contradicted by context. Any example or exemplary language used herein (e.g., "such as"), unless otherwise claimed, is intended merely to better illustrate the disclosure and does not pose a limitation on the scope of the disclosure. No language in the specification should be construed as indicating any non-claimed element as essential to the practice of the present disclosure.

[0147] Preferred embodiments of the disclosure are described herein, including the best mode known to the inventors for carrying out the disclosure. Variations of these preferred embodiments will become apparent to those skilled in the art upon reading the foregoing description. The inventor expects that skilled persons will apply such variations as appropriate, and intends to practice the disclosure otherwise than as specifically described herein. Accordingly, this disclosure includes all modifications and equivalents of the subject matter recited in the claims appended hereto as permitted by applicable law. Moreover, this disclosure includes any combination of the above-described elements in all variations thereof unless otherwise indicated herein or otherwise clearly contradicted by context.

Claims

1. An electron gun device for deposition comprising: an apparatus main body equipped with an electron beam source and installed to the side of a crucible that is open at the top and contains an evaporation material to be deposited on a coating member; and a pair of pole pieces that guide the electron beam irradiated from the apparatus main body to a target area set in the crucible, wherein the pair of pole pieces comprise: a base end installed on the apparatus main body; a tip end disposed above the crucible and behind the target area as viewed from the apparatus main body; a first connecting portion extending from the base end in a direction away from the apparatus main body; a second connecting portion connecting an end of the first connecting portion to the tip end and extending in a second direction intersecting a first direction along a straight line connecting the apparatus main body and the target area; and a protruding piece extending in a direction away from the target area from at least a part of the tip end, the first connecting portion, and the second connecting portion.

2. The deposition electron gun device according to claim 1, wherein the protruding piece includes a reflected electron deflection member protruding from the tip or from a part of the second connecting portion adjacent to the tip in a direction away from the device body in order to deflect reflected electrons reflected from the target area in a predetermined direction.

3. The deposition electron gun device according to claim 1, wherein the protruding piece is formed so that the length of the entire second connecting portion in the first direction is longer in the direction away from the device body than the length of the tip portion in the first direction.

4. The deposition electron gun device according to claim 1, wherein the protruding piece includes one or more magnetic field adjustment pieces extending in a direction away from the target region from a portion where the second connecting portion and an end of the first connecting portion are connected.

5. The deposition electron gun device according to claim 1, wherein the protruding piece has one or more magnetic field adjusting protrusions on a surface facing the other protruding piece, the protruding piece extending in a direction approaching the other protruding piece.

6. The deposition electron gun apparatus according to claim 1, wherein the protruding piece extends from at least a portion of the tip portion, the first connecting portion, and the second connecting portion in a direction away from the target region and in a direction away from or toward the crucible.

7. The deposition electron gun device according to claim 1, wherein the thickness of at least a portion of the first connecting portion along a third direction intersecting the first direction and the second direction is thicker than the thickness of the tip portion along the third direction.

8. An electron gun device for deposition according to any one of claims 1 to 7, wherein the pair of pole pieces are provided with a detour portion extending in a direction away from the target region in at least a portion between the base end portion and a position reaching above the crucible.

9. The deposition electron gun apparatus according to claim 8, wherein the detour section extends in a direction intersecting a straight line connecting the apparatus body and the target area.

10. The deposition electron gun apparatus according to claim 8, wherein the base end is located below the opening of the crucible, and the bypass portion extends below the opening of the crucible.

11. An electron gun device for deposition comprising: an apparatus main body having an electron beam source installed to the side of a crucible that is open at the top and contains an evaporation material to be deposited on a coating member; and a pair of pole pieces that guide the electron beam irradiated from the apparatus main body to a target area set in the crucible, the pair of pole pieces having base ends installed in the apparatus main body and tip ends disposed above the crucible and behind the target area as viewed from the apparatus main body, and having a detour portion extending in a direction away from the target area in at least a portion of the distance between the base ends and a position reaching the top of the crucible.

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