Double-sided package structure, power supply apparatus and electronic device

Abstract

A double-sided package structure, a power supply apparatus and an electronic device. In the double-sided package structure, power devices are provided on both sides of a PCB substrate, and a heat conduction member is inserted into the PCB substrate and packaged into a packaged body; the packaged body comprises a heat dissipation surface, the heat dissipation surface being opposite one side of the PCB substrate; and the PCB substrate is provided with a via hole and a through hole which are connected to each other by means of a copper foil, the via hole being connected to at least the power device arranged on the other side of the PCB substrate, and the heat conduction member being inserted into the through hole, one end of the heat conduction member extending to the heat dissipation surface of the packaged body. In such an arrangement, heat from the power device located on a non-heat-dissipation-surface side can be dissipated through a low-thermal-resistance heat dissipation path constructed by the via hole, the copper foil, the through hole and the heat conduction member in sequence, effectively improving the heat dissipation performance of the power device on the non-heat-dissipation-surface side; in addition, on the basis of the structural characteristics of the inserted heat conduction member, the package width can be reduced, thus meeting the trend requirements for high-density layout.

Description

A double-sided packaging structure, a power supply device, and an electronic device.

[0001] This application claims priority to Chinese Patent Application No. 202311761950.1, filed on December 19, 2023, entitled "A Double-Sided Packaging Structure, Power Supply Device and Electronic Equipment", the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application relates to the field of electronic component packaging technology, and in particular to a double-sided packaging structure, a power supply device, and an electronic device. Background Technology

[0003] For double-sided packaged structures, the heat generated by the internal power devices needs to be dissipated in a timely manner to meet the requirements of actual output performance. With the trend of miniaturization, integration, and high power consumption in devices, their heat dissipation environment is facing a bottleneck.

[0004] To meet the functional requirements of high-density layouts, power devices in System-in-Package (SIP) have evolved from single-sided to double-sided layouts. This means placing power devices on both sides of the printed circuit board (PCB) and providing a good heat dissipation environment to reasonably balance the high performance and high-density layout requirements of the SIP module. In a double-sided package structure, the side closer to the heat sink is the heat dissipation surface, while the other side is a non-heat dissipation surface. The power devices on the heat dissipation surface have shorter heat dissipation paths, while those on the non-heat dissipation surface have longer paths and relatively poorer heat dissipation capabilities. When heat inside the SiP cannot be dissipated in time, it will affect the overall performance improvement of the SIP module.

[0005] Summary of the Invention

[0006] This application provides a double-sided packaging structure, a power supply device, and an electronic device, and improves their heat dissipation performance by optimizing the double-sided packaging structure.

[0007] The first aspect of this application provides a double-sided packaging structure, which includes a PCB substrate, power devices, and a heat-conducting component. Power devices are disposed on both sides of the PCB substrate, and the heat-conducting component is inserted into the PCB substrate and encapsulated to form a package. The package includes a heat dissipation surface, which is opposite to one side of the PCB substrate. The PCB substrate has vias and through holes, which are connected by copper foil on the PCB substrate. The vias are connected to at least one power device disposed on the other side of the PCB substrate, and the heat-conducting component is inserted into the through hole, with one end of the heat-conducting component extending to the heat dissipation surface of the package.

[0008] With this configuration, the power devices on the other side of the PCB substrate are far from the heat dissipation surface, i.e., the power devices on the non-heat dissipation side. For the power devices on the non-heat dissipation side, their operating heat can be dissipated to the heat dissipation surface through the first heat dissipation path constructed by vias, copper foil, through holes, and thermal conductive components. Moreover, the through holes, copper foil, and thermal conductive components on the PCB board all have good thermal conductivity, and the thermal resistance of the heat dissipation path formed is low. In other words, a heat dissipation path with low thermal resistance is constructed between the non-heat dissipation side and the heat dissipation surface of the double-sided package structure, which can make full use of the heat dissipation capacity of the heat dissipation device and effectively improve the heat dissipation performance of the power devices on the non-heat dissipation side. At the same time, the power devices on the side where the heat dissipation surface of the double-sided package structure is located are shorter than the heat dissipation path of the heat dissipation device, which can achieve reliable heat dissipation.

[0009] Overall, the heat generated by both sides of the power devices can be quickly dissipated, effectively improving heat dissipation performance. In high-power applications, taking power supply SiP as an example, the double-sided packaging structure with good heat dissipation performance can prevent heat accumulation from causing device overheating, ensuring the actual output capability of the power supply SiP and effectively overcoming the impact of derating output on product performance improvement.

[0010] Furthermore, in this embodiment, the through-hole walls on the PCB substrate provide support and positioning for the thermally conductive components, and the use of smaller cross-sectional dimensions also ensures good pre-assembly stability. This reduces the board space required, thereby decreasing the package width and aligning with the trend towards high-density layouts.

[0011] Furthermore, based on the excellent pre-assembly stability of this thermal conductive component, for packages with larger thicknesses, the height of the thermal conductive component can be determined according to the overall layout requirements of the actual product. Simultaneously, the efficient heat dissipation path formed by the thermal conductive component improves the heat dissipation capacity of the non-heat dissipation side without increasing the thickness of the package. It can be widely applied to packages of different thicknesses, exhibiting good structural versatility.

[0012] In practical applications, the heat dissipation surface of the package can directly contact the heat dissipation device for heat exchange, or it can indirectly contact the heat dissipation device through an intermediate structure, such as, but not limited to, indirectly contacting the heat dissipation device through thermal conductive gel.

[0013] For example, the heat-conducting element can be a rotating body, or other shapes that meet functional requirements.

[0014] Based on the first aspect, this application also provides a first implementation of the first aspect: power devices located on both sides of the PCB substrate are connected to vias. That is, power devices located on the heat dissipation side can also be led to the heat dissipation surface through a heat dissipation path constructed sequentially through vias, copper foil, through holes and thermal conductive components, making full use of the constructed low thermal resistance heat dissipation path to achieve multi-path efficient heat dissipation.

[0015] For example, the power device can be connected to one via or multiple vias.

[0016] Alternatively, the via can be connected to a single layer of copper foil or multiple layers of copper foil, as an example.

[0017] Alternatively, the copper foil may be connected to one or more through holes.

[0018] Based on the first aspect, or the first embodiment of the first aspect, this application also provides a second embodiment of the first aspect: the two opposing surfaces and side surfaces of the package are covered with metal layers, the metal layers including a surface metal layer on the surface of the package and a side metal layer on the side surface of the package, and the side metal layer is connected to the two surface metal layers respectively, while the end of the heat-conducting component is connected to the surface metal layer on its side. Thus, a heat conduction path from the heat dissipation surface to the non-heat dissipation surface is established using the metal layers. For the power device on the non-heat dissipation surface, the heat generated during operation can also be transferred sequentially through the surface metal layer and the side metal layer on the non-heat dissipation surface to the surface metal layer on the heat dissipation surface, fully utilizing the heat dissipation capacity of the heat dissipation device. The second heat dissipation path formed by the metal layers on the surface of the package simultaneously and rapidly dissipates the heat from the power device on the non-heat dissipation surface.

[0019] Based on the second implementation of the first aspect, this application also provides a third implementation of the first aspect: patterning the surface metal layer of the metal layer and forming pins of a double-sided package structure. With this configuration, the thermally conductive component can also guide electrical signals from the PCB substrate to the package surface and connect them to the system board or power supply backplane via the functional pins formed by the patterned side surface metal layer. In other words, this low thermal resistance heat dissipation path also serves a current-carrying function, such as, but not limited to, communication or power supply, meeting the design requirements of the trend towards high-density layouts.

[0020] In practical applications, when the surface of the package is not covered with a metal layer, the thermally conductive component can also be directly used as a functional pin of the double-sided package structure to realize signal transmission.

[0021] Based on the first aspect, or the first embodiment of the first aspect, or the second embodiment of the first aspect, or the third embodiment of the first aspect, this application also provides a fourth embodiment of the first aspect: in the insertion direction, the other end of the heat-conducting element extends to the non-heat-dissipating surface of the package, wherein the non-heat-dissipating surface and the heat-dissipating surface are two surfaces of the package that are opposite to each other. Thus, based on this heat-conducting element, bidirectional heat conduction capability can be obtained.

[0022] Based on the first aspect, or the first embodiment of the first aspect, or the second embodiment of the first aspect, or the third embodiment of the first aspect, or the fourth embodiment of the first aspect, this application also provides a fifth embodiment of the first aspect: the through hole includes a large-diameter section and a small-diameter section connected together. The heat-conducting component is inserted in the large-diameter section of the through hole to achieve heat dissipation and flow. The heat-conducting component does not penetrate to the other side of the PCB substrate, which can reduce the board area occupied on that side, so as to arrange more electronic components and improve the layout density. At the same time, based on the setting of the small-diameter section, in the PCB electroplating and reflow assembly process, the air can be vented through the small-diameter section. For example, in the copper plating process on the sidewall of the through hole, it is conducive to the exchange of flux and avoids poor flux exchange at the bottom of the blind hole (reducing the board area occupied by the heat-conducting component), which affects the electroplating quality of large-size buried holes. For another example, during reflow assembly, the flux can be discharged through the small-diameter section after evaporation, which can avoid the gas expansion and volatilization squeezing of solder paste and effectively ensure product yield.

[0023] Based on the first aspect, or the first embodiment of the first aspect, or the second embodiment of the first aspect, or the third embodiment of the first aspect, or the fourth embodiment of the first aspect, or the fifth embodiment of the first aspect, this application also provides a sixth embodiment of the first aspect: the heat-conducting component includes a small segment and a large segment connected to each other, and there is a stepped surface between the two; the small segment is inserted into a through hole in the PCB substrate, and the stepped surface abuts against the surface of the PCB substrate. In this way, based on the abutting and fitting relationship between the stepped surface and the surface, assembly positioning can be formed when the heat-conducting component is inserted into the PCB substrate, so that the heat-conducting component maintains a pre-installed angle relative to the PCB substrate, such as, but not limited to, approximately perpendicular, to avoid the heat-conducting component tilting before fixing, effectively ensuring product yield.

[0024] Based on the sixth embodiment of the first aspect, this application also provides a seventh embodiment of the first aspect: multiple small segments are spaced apart on the large segment of the heat-conducting component. In practical applications, each small segment is adapted to a corresponding through-hole, which can effectively enhance the heat conduction capacity. Moreover, multiple small segments adapted to the PCB substrate can be placed in one assembly operation, and the pre-assembly stability is further improved, resulting in better assembly processability.

[0025] In practical applications, the large segment of the heat-conducting component can be elongated, and multiple smaller segments are sequentially spaced along the extension direction of the large segment. For example, the large segment can be straight or wavy.

[0026] In other practical applications, the large segment of the heat-conducting component can also be bent, with multiple smaller segments spaced apart sequentially along the bending direction of the large segment. For example, the large segment can be approximately right-angled, or it can be determined according to the actual board layout, so as to provide good heat dissipation for power devices while taking into account the original functional layout of the product, thus having good adaptability.

[0027] Based on the first aspect, or the first embodiment of the first aspect, or the second embodiment of the first aspect, or the third embodiment of the first aspect, or the fourth embodiment of the first aspect, or the fifth embodiment of the first aspect, or the sixth embodiment of the first aspect, or the seventh embodiment of the first aspect, this application also provides an eighth embodiment of the first aspect: the power device includes a field-effect transistor. In practical applications, the double-sided package structure also includes multiple electronic components, at least one of which is a capacitor or a resistor, and is disposed on at least one side of the PCB substrate.

[0028] A second aspect of this application provides a power supply device, which includes a system board, a power system-in-package (SiP) module, and a heat dissipation device. The SiP module is fabricated using the double-sided packaging structure described above and is soldered onto the system board. The heat dissipation device exchanges heat with the other side of the SiP module. Overall, the multi-path enhanced heat dissipation based on this double-sided packaging structure can effectively improve the over-temperature thermal bottleneck of power SiP devices, providing technical support for improving power density and efficiency.

[0029] The third aspect of this application provides another power supply device, which includes a system board, a power supply backplane, a power system-in-package (SiP) module, and a heat dissipation device. The power system-in-package module is manufactured using the double-sided packaging structure described above and is soldered onto the power supply backplane. The heat dissipation device is located on the same side as the power supply backplane, and the heat dissipation device exchanges heat with the power system-in-package module through contact. In practical applications, this can also effectively improve the over-temperature thermal bottleneck of power SiP devices, providing technical support for improving power density and efficiency.

[0030] A fourth aspect of this application provides an electronic device including a motherboard and a power supply device as described above, the power supply device being disposed on the motherboard.

[0031] For example, the heat dissipation device can be a finned air-cooled radiator; for other examples, the heat dissipation device can also be a liquid-cooled plate radiator. Attached Figure Description

[0032] Figure 1 is a cross-sectional view of a double-sided packaging structure provided in an embodiment of this application;

[0033] Figure 2 is a schematic diagram of one usage state of the double-sided packaging structure shown in Figure 1;

[0034] Figure 3 is a schematic diagram of another usage state of the double-sided packaging structure shown in Figure 1;

[0035] Figure 4 is a schematic diagram of a heat-conducting component provided in an embodiment of this application;

[0036] Figure 5 is a schematic diagram of another heat-conducting component provided in an embodiment of this application;

[0037] Figure 6 is a structural schematic diagram of another heat-conducting component provided in an embodiment of this application;

[0038] Figure 7 is a schematic diagram of another heat-conducting component provided in an embodiment of this application;

[0039] Figure 8 is a cross-sectional view of another double-sided packaging structure provided in an embodiment of this application;

[0040] Figure 9 is a schematic diagram of one usage state of the double-sided packaging structure shown in Figure 8;

[0041] Figure 10 is a schematic diagram of the assembly process of the double-sided packaging structure shown in Figure 8;

[0042] Figure 11 is a cross-sectional view of another double-sided packaging structure provided in an embodiment of this application;

[0043] Figure 12 is a schematic diagram of one usage state of the double-sided packaging structure shown in Figure 11;

[0044] Figure 13 is a schematic diagram of an electronic device provided in an embodiment of this application;

[0045] Figure 14 is a schematic diagram of the architecture of a power supply device provided in an embodiment of this application;

[0046] Figure 15 is a schematic diagram of the architecture of another power supply device provided in an embodiment of this application. Detailed Implementation

[0047] This application provides a double-sided packaging structure implementation scheme for application in different high-power scenarios.

[0048] With the development of System-in-Package (SIP) technology, power devices have evolved from single-sided to double-sided layouts to facilitate miniaturization, integration, and high-power applications. Taking a System-in-Package (SIP) module as an example, the field-effect transistors (MOSFETs or MOS) of the power SiP are located on both sides of the package PCB, forming a double-sided package structure. MOSFETs in power SiPs generate significant heat, requiring excellent heat dissipation capabilities. In addition to MOSFETs, power SiPs may also include electronic components such as resistors and / or capacitors.

[0049] With innovations in circuit architecture, power modules employing vertical power supply architectures offer higher power density. Consequently, the positional relationship between the power supply system-in-package (SiP) and high-temperature load chips is becoming increasingly closer, posing a bottleneck for heat dissipation. If internally generated heat cannot be dissipated in time, heat accumulation leads to device overheating, forcing the power supply SiP to derating its output to ensure performance and lifespan. For example, a 1600W packaged power supply can output full power below 60℃, but its output power drops to 1200W at 70℃. This clearly demonstrates that the heat dissipation capability of the package structure directly impacts the continued improvement of power density.

[0050] For power supply SiP modules, the MOSFETs located on the non-heat-dissipating side have a relatively long heat dissipation path from the heat dissipation device. Timely and effective heat dissipation from these MOSFETs has become a key focus for ensuring the thermal performance of the package structure. Therefore, solutions are needed for the non-heat-dissipating side of double-sided package structures to effectively dissipate heat from the devices and prevent high temperatures from negatively impacting product performance.

[0051] Based on this, this application provides a double-sided packaging structure, which includes a PCB substrate, power devices, and heat-conducting components. The PCB substrate includes a first plate surface and a second plate surface that are opposite to each other. Power devices are disposed on both the first plate surface and the second plate surface. The heat-conducting components are inserted into the PCB substrate and packaged to form a package. Here, "packaging" refers to using packaging filler to seal the PCB substrate and power devices to form a package with a defined structural shape. For example, but not limited to, the power device can be a MOS of a power supply SiP module. In other possible implementations, capacitors, resistors, inductors, or integrated circuits (ICs) and other electronic components can also be packaged on both sides of the PCB substrate.

[0052] The package includes a heat dissipation surface that faces one side of the PCB substrate (e.g., the first side) for heat exchange with the heat dissipation device. This side containing the heat dissipation surface is also the side containing the heat dissipation surface of the double-sided package structure. The side opposite to the heat dissipation surface is the side of the non-heat dissipation surface of the double-sided package structure. Here, the heat dissipation surface of the package can directly contact the heat dissipation device for heat exchange, or it can indirectly contact the heat dissipation device through an intermediate structure, such as, but not limited to, indirectly contacting the heat dissipation device through thermal conductive gel.

[0053] The PCB substrate has vias and through holes, which are connected by copper foil on the PCB substrate. The vias are connected to power devices located on the other side of the PCB substrate (e.g., the second side). The heat-conducting component is inserted into the through hole of the PCB substrate, and one end of the heat-conducting component extends to the heat dissipation surface of the package.

[0054] With this configuration, the heat generated by the power devices on the other side of the double-sided package structure can be dissipated to the heat dissipation surface through a heat dissipation path constructed by vias, copper foil, through-holes, and thermal conductive components. The through-holes, copper foil, and thermal conductive components on the PCB board all have good thermal conductivity, resulting in low thermal resistance in the heat dissipation path. In other words, a heat dissipation path with low thermal resistance is constructed between the non-heat dissipation side and the heat dissipation side of the double-sided package structure, which can fully utilize the heat dissipation capacity of the heat dissipation device and effectively improve the heat dissipation performance of the power devices on the non-heat dissipation side. At the same time, the power devices on the first side of the double-sided package structure are located on the side where the heat dissipation surface is located, and are closer to the heat dissipation path of the heat dissipation device, thus achieving reliable heat dissipation.

[0055] Overall, the heat generated by both power devices is rapidly dissipated, effectively improving heat dissipation performance. In high-power applications, the double-sided package structure with excellent heat dissipation prevents heat accumulation that could lead to device overheating, ensuring the actual output capability of the power supply SiP and effectively overcoming the impact of derating on product performance.

[0056] Furthermore, in this embodiment, the through-hole walls on the PCB substrate provide support and positioning for the thermally conductive components, and the use of smaller cross-sectional dimensions also ensures good pre-assembly stability. This reduces the board space required, thereby decreasing the package width and aligning with the trend towards high-density layouts.

[0057] Furthermore, based on the excellent pre-assembly stability of this thermal conductive component, for packages with larger thicknesses, the height of the thermal conductive component can be determined according to the overall layout requirements of the actual product. Simultaneously, the efficient heat dissipation path formed by the thermal conductive component improves the heat dissipation capacity of the non-heat dissipation side without increasing the thickness of the package. It can be widely applied to packages of different thicknesses, exhibiting good structural versatility.

[0058] To better understand the technical solution and effects of this application, without loss of generality, the following description will focus on power supply SiP and provide a detailed description of specific embodiments in conjunction with the accompanying drawings. Please refer to Figure 1, which is a cross-sectional view of a double-sided packaging structure provided in an embodiment of this application.

[0059] As shown in Figure 1, the double-sided package structure 10 is a power SiP module. In the example shown, a first MOS 11 is disposed on the first surface 21 of the PCB substrate 2, and a second MOS 12 is disposed on the second surface 22 of the PCB substrate 2. For ease of description, other electronic components in the power SiP, such as, but not limited to, power devices like capacitors, resistors, or inductors, are not shown in the figure.

[0060] The vias 23 and through holes 24 spaced apart on the PCB substrate 2 are connected by copper foil 25. In specific implementations, the copper foil 25 can be an intermediate copper foil layer or a surface copper foil layer, and can be formed using different hole forming processes to achieve a reliable connection between the vias 23 and the copper foil 25, and between the through holes 24 and the copper foil 25.

[0061] In a specific implementation, the via 23 used for connection to the MOS can be a through hole as shown in the figure. In other possible implementations, the via 23 can also be other hole types, such as buried vias or blind vias, all of which can achieve the connection relationship described above. This application does not limit the implementation.

[0062] In this implementation, the MOS transistors (MOS transistors) disposed on both sides of the PCB substrate 2 are connected to vias 23 and transfer heat to the vias 24 vias 25. In specific implementations, each MOS transistor can be connected to one or more vias 23; using multiple vias 23 results in higher heat transfer efficiency. Corresponding to one or more vias 23 for each MOS transistor, it can be connected to one layer or multiple layers of copper foil 25; using multiple layers of copper foil 25 results in higher heat transfer efficiency. Similarly, one or more layers of copper foil 25 can be connected to one or more vias 24, further improving heat transfer efficiency based on the heat-conducting components 4 adapted to the multiple vias 24. In other possible implementations, the number of vias 23, copper foils 25, and vias 24, which serve as the heat dissipation path, can be arbitrarily selected according to actual needs.

[0063] The first MOS 11 located on the first plate surface 21 and the second MOS 12 located on the second plate surface 22 can be connected to the same via through the same via and copper foil layer, utilizing a path with low thermal resistance to transfer the heat generated by each MOS to the via side. In possible implementations, each MOS can also be connected to different vias and copper foil layers, as long as a heat dissipation path with low thermal resistance can be obtained. This application does not limit the scope of the embodiments.

[0064] Specifically, without affecting the functionality of the PCB substrate 2, the spacing between via 23 and through hole 24 can be minimized to shorten the heat dissipation path of the MOS (power device) to be cooled and further optimize the heat dissipation capability.

[0065] In a practical implementation, the MOS transistors located on both sides of the PCB substrate 2 can be interconnected via the PCB substrate according to functional configuration requirements. Existing technologies can be used for this purpose, and details will not be elaborated here.

[0066] It is understood that the number of MOS transistors in the double-sided package structure 10 can be determined based on the overall product design. For example, but not limited to, four, six, or other multiple transistors can be configured. Multiple MOS transistors can be respectively disposed on two opposite surfaces of the PCB substrate 2, and encapsulated by the encapsulation filler 3 to form a package. Here, the encapsulation filler 3 can be a resin filling material; this embodiment of the application does not limit the specific application.

[0067] The heat-conducting component 4 of the double-sided packaging structure 10 is inserted into the PCB substrate 2. In the insertion direction, the heat-conducting component 4 has a variable cross-section structure, including a small segment 41 and a large segment 42 connected to each other, and there is a stepped surface 43 between the two.

[0068] The small segment 41 of the heat-conducting component 4 is inserted into the through hole 24 of the PCB substrate 2 and extends out of the first plate surface 21. The heat-conducting component 4 can transfer heat through the contact between the small segment 41 and the through hole 24. The large segment 42 of the heat-conducting component 4 is located on the side of the second plate surface 22, and its stepped surface 43 abuts against the second plate surface 22. In this way, based on the abutting and matching relationship between the stepped surface 43 and the second plate surface 22, an assembly positioning can be formed when the heat-conducting component 4 is inserted into the PCB substrate 2, so that the heat-conducting component 4 maintains a pre-installed angle relative to the PCB substrate 2, such as, but not limited to, being approximately perpendicular as shown in the figure, to prevent the heat-conducting component 4 from tilting relative to the PCB substrate 2 before it is fixed, thus effectively ensuring the product yield. It should be understood that the terms "small segment" and "large segment" are used to describe the variable cross-sectional structural dimensions of the heat-conducting component 4, rather than to refer to specific structural dimensions. In addition, the step surface 43 is a transitional structural surface between the "small segment" and the "large segment". The shape of the step surface can be determined according to the hole forming process, rather than being limited to a plane perpendicular to the axis of the through hole.

[0069] Furthermore, the heat-conducting component 4 adopts an through-hole method, and the hole wall of the via 23 on the PCB substrate 2 can support the heat-conducting component 4. In this way, the heat-conducting component 4, which has a smaller cross-sectional size, also has good pre-installation stability. Compared with the traditional heat dissipation method using surface-mount copper pillars, the copper pillars themselves need to have a certain cross-sectional size to be stably attached to the PCB surface. In particular, the larger the height of the copper pillar, the larger the cross-sectional size of the copper pillar also needs to be to avoid instability and tipping. For double-sided package structures with the same heat dissipation parameters, the use of the through-hole method for the heat-conducting component 4 can reduce the space occupied by the small cross-sectional size of the heat-conducting component 4, and the package width can be reasonably controlled.

[0070] Furthermore, the assembly positioning based on the stepped surface 43 can reduce the machining accuracy requirements of the heat-conducting component 4 and the through hole 24 to a certain extent, and can reasonably control the product processing cost while ensuring product yield.

[0071] In practical implementation, the heat-conducting component 4, inserted into the through-hole 24, can be assembled and fixed using a through-hole reflow soldering process. Specifically, tin can be applied near the through-hole 24, and the heat-conducting component 4 can be inserted into the hole. It can then be soldered together with other surface-mount devices on the PCB substrate 2 through a reflow oven. The heat-conducting component 4 and the through-hole 24 are fixed together with solder 6, without the need for additional processes. This method features a simple process route and controllable process costs.

[0072] As shown in Figure 1, in the insertion direction, the two extended ends of the heat-conducting component 4 are located on the surface of the package on their respective sides, that is, penetrating the package (PCB substrate and package material). One end extends to the heat dissipation surface of the package, and the other end extends to the non-heat dissipation surface of the package opposite to the heat dissipation surface, so as to reduce the thermal resistance of the heat dissipation path. In other words, the small-sized segment 41 of the heat-conducting component 4 extends to the first surface 10A of the package, and the large-sized segment 42 of the heat-conducting component 4 extends to the second surface 10B of the package. The first surface 10A of the package is on the same side as the first plate surface 21 of the PCB substrate 2, and the second surface 10B of the package is on the same side as the second plate surface 22 of the PCB substrate 2. Thus, heat can be transferred to the two opposite surfaces of the package through the heat-conducting component 4, and contact heat exchange can be achieved with the heat dissipation device side according to the configuration requirements of the actual application scenario.

[0073] Here, the first surface 10A and the second surface 10B are two surfaces of the package that are opposite to each other. In different usage states, one is the heat dissipation surface close to the heat dissipation device, and the other is the non-heat dissipation surface far away from the heat dissipation device. Please refer to Figures 2 and 3 together, which show two different usage states of the double-sided package structure 10 shown in Figure 1.

[0074] In one specific implementation, as shown in Figure 2, the double-sided package structure 10 is soldered onto the system board 30, with the pins located on the second surface 10B of the package. The soldering surface of the package is located on the side of the second surface 10B. The heat dissipation device 20 is disposed on one side of the first surface 10A of the package and contacts for heat exchange. The heat dissipation surface of the package is located on the side of the first surface 10A. In other words, the soldering surface and the heat dissipation surface are located on opposite sides of the package. In the double-sided package structure 10 shown in Figure 2, the first MOS 11 disposed on the first board is a power device on the heat dissipation side, and the second MOS 12 disposed on the second board is a power device on the non-heat dissipation side.

[0075] For the second MOS12 on the non-heat-dissipating side, the heat generated during its operation can be transferred to the via side through the vias and copper foil on the PCB substrate 2, specifically in the heat conduction direction shown by the dashed arrow in Figure 2, and then transferred to the heat dissipation device 20 through the heat conductor 4. In this way, the heat dissipation capacity of the heat dissipation device 20 is fully utilized to form a first heat dissipation path with low thermal resistance: PCB copper (via 23, copper foil 25, through hole 24) → heat conductor 4 → heat dissipation device 20, which quickly dissipates the heat of the power device on the non-heat-dissipating side.

[0076] In specific implementations, the structure of the heat dissipation device 20 can be determined according to the configuration requirements of the application scenario, such as, but not limited to, a heat dissipation plate. To improve heat conduction efficiency, the heat dissipation device 20 can exchange heat with the heat dissipation surface of the double-sided encapsulation structure 10 through the contact of the thermally conductive medium 40. For example, but not limited to, the thermally conductive medium 40 can be a thermally conductive gel, which fills the gaps while conducting heat, thereby reducing the absolute thermal resistance of the heat dissipation structure and achieving low thermal resistance and high thermal conductivity heat dissipation.

[0077] In other possible implementations, the heat dissipation device 20 can adopt a liquid cooling structure or an air cooling structure. This application does not limit the specific implementation.

[0078] As shown in Figures 1 and 2, in order to further improve the heat dissipation capability of the double-sided package structure 10, optionally, the first surface 10A, the second surface 10B and the side surface of the package are covered with a metal layer 5, and the side metal layer 51 located on the side surface is connected to the surface metal layer 52 located on the first surface 10A and the second surface 10B, respectively, so as to establish a heat conduction path from the heat dissipation side to the non-heat dissipation side using the metal layer 5.

[0079] For the second MOS12 on the non-heat-dissipating side, the heat generated during its operation can be transferred sequentially through the surface metal layer 52 and the side metal layer 51 located on the second surface 10B to the surface metal layer 52 located on the first surface 10A. Specifically, as shown by the solid arrow in Figure 2, the heat conduction direction fully utilizes the heat dissipation capacity of the heat dissipation device 20, and utilizes the second heat dissipation path formed by the metal layer 5 on the surface of the package: surface metal layer 52 → side metal layer 51 → heat dissipation device 20, simultaneously and rapidly dissipating the heat from the power device on the non-heat-dissipating side.

[0080] Furthermore, the surface metal layers 52 located on the first surface 10A and the second surface 10B respectively contact and exchange heat with the small-sized segment 41 and the large-sized segment 42 of the heat-conducting element 4. The metal layers 5 form a continuous heat conduction path, which can transfer heat to one side of the heat dissipation device 20 and the other side of the system board 30, thereby playing a role in heat equalization, heat transfer, and heat dissipation of the heat dissipated by the heat-conducting element 4. Overall, this double-sided packaging structure 10 enhances heat dissipation through multiple paths, which can effectively improve the over-temperature thermal bottleneck of power SiP devices and provide technical support for improving power density and efficiency.

[0081] Temperature simulation tests were conducted using a surface-mount copper pillar heat dissipation scheme on the non-heat dissipation side as a comparison. Under the same test scenario, by applying the double-sided package structure 10 described in Figure 1, the MOS temperature on the non-heat dissipation side can be reduced by about 25°C, and the heat dissipation enhancement effect is quite significant.

[0082] In a specific implementation, the metal layer 5 can be formed by surface deposition, for example, but not limited to, a solderable metal plating such as a copper layer.

[0083] As shown in Figures 1 and 2, the heat-conducting component 4 located on the first heat dissipation path can also have a signal transmission function.

[0084] The heat-conducting component 4 can be soldered to the through-hole 24 of the PCB substrate 2. Its large-size segment 42 extends to the second surface 10B of the package and contacts the surface metal layer 52 on the second surface 10B for heat exchange. Simultaneously, the surface metal layer 52 on the second surface 10B can be patterned to form pins on the soldering surface of the double-sided package structure 10, with the pin functions implemented through the connected large-size segment 42. In other words, the heat-conducting component 4 can also guide the electrical signals from the PCB substrate 2 to the surface of the package and connect them to the surface metal layer 52. The patterned surface metal layer 52 serves as a functional pin of the double-sided package structure 10 and connects to the system board 30.

[0085] Of course, in cases where the surface of the package is not covered with a metal layer, the large segment 42 can also be directly used as a functional pin of the double-sided package structure 10 to realize signal transmission, such as, but not limited to, communication or power supply.

[0086] In another specific implementation, as shown in Figure 3, the double-sided package structure 10 is soldered onto the power supply backplane 50, with the pins located on the second surface 10B of the package. The soldering surface of the package is located on the side of the second surface 10B. The heat dissipation device 20 is disposed on one side of the second surface 10B of the package and contacts for heat exchange. The heat dissipation surface of the package is located on the side of the second surface 10B. In other words, the soldering surface and the heat dissipation surface are located on the same side of the package. In the double-sided package structure 10 shown in Figure 3, the first MOS 11 disposed on the first board is a power device on the non-heat dissipation side, and the second MOS 12 disposed on the second board is a power device on the heat dissipation side.

[0087] For the first MOS11 on the non-heat-dissipating side, the heat generated during its operation can be transferred to the via side through the vias and copper foil on the PCB substrate 2, specifically in the heat conduction direction shown by the dashed arrow in Figure 3, and then transferred to the heat dissipation device 20 through the heat conductor 4. In this way, the heat dissipation capacity of the heat dissipation device 20 is fully utilized to form a first heat dissipation path with low thermal resistance, and the heat of the power device on the non-heat-dissipating side is quickly dissipated.

[0088] For the first MOS11 on the non-heat-dissipating side, the heat generated during its operation can be transferred sequentially through the surface metal layer 52 and the side metal layer 51 on the first surface 10A to the surface metal layer 52 on the second surface 10B. Specifically, as shown by the solid arrow in Figure 3, the heat conduction direction fully utilizes the heat dissipation capacity of the heat dissipation device 20 and utilizes the second heat dissipation path formed by the metal layer 5 on the surface of the package to simultaneously and rapidly dissipate the heat from the power device on the non-heat-dissipating side.

[0089] It should be noted that in the implementation described in Figure 1, the MOS (power devices) on both sides of the PCB substrate 2 are connected to vias. In other possible implementations, only the MOS on the non-heat-dissipating side can be connected to vias (not shown in the figure), providing a reliable heat dissipation path for the power devices on the non-heat-dissipating side of the double-sided package structure. That is, the MOS on the side away from the heat dissipation device establishes a low thermal resistance path through vias, copper foil, and through-holes. For example, the first plate surface 21 of the package is close to the heat dissipation device, and the second MOS 12 on the second plate surface 22 is connected to a via; as another example, the second plate surface 22 of the package is close to the heat dissipation device, and the first MOS 11 on the first plate surface 21 is connected to a via.

[0090] Optionally, the double-sided package structure 10 may also integrate other electronic components (not shown in the figure), such as, but not limited to, resistors and / or capacitors disposed on the PCB substrate 2, to achieve corresponding functions according to the overall module design requirements. In addition to MOS, other electronic components that generate a large amount of heat may also be used as power devices and configured with vias (not shown in the figure) to transfer the heat generated during their operation to the corresponding heat-conducting components through the PCB copper (vias, copper foil, through-holes).

[0091] For the variable cross-section columnar heat conductor 4, different structural forms can be adopted in the specific implementation.

[0092] Please refer to Figure 4, which is a schematic diagram of the structure of a heat-conducting component provided in an embodiment of this application. As shown in Figure 4, the heat-conducting component 4a is a rotating body, and both its small segment 41 and large segment 42 are rotating structures, with a stepped surface 43 formed between them. The small segment 41 is used to insert into the through hole 24 of the PCB substrate 2 to form a heat dissipation path, and the stepped surface 43 is used to abut against the surface of the PCB substrate to form an assembly positioning.

[0093] Please refer to Figure 5, which is a schematic diagram of another heat-conducting component provided in an embodiment of this application. As shown in Figure 5, the large-size segment 42 of the heat-conducting component 4b is a cuboid, and the small-size segment 41 is a column with an irregular cross-section. Similarly, a stepped surface 43 is formed between the two.

[0094] The heat-conducting components described in Figures 4 and 5 above all include a small segment. To improve both thermal conductivity and operability, the heat-conducting component may optionally include multiple small segments.

[0095] Please refer to Figure 6, which is a schematic diagram of another heat-conducting component provided in this application embodiment. As shown in Figure 6, the large-size segment 42 of the heat-conducting component 4c is elongated, and three smaller segments 41 are spaced apart on this large-size segment 42. Each smaller segment 41 can be inserted into three through holes 24 (not shown in the figure) on the PCB substrate 2. In other implementations, a plurality of other smaller segments 41 can be provided on the large-size segment 42. This application embodiment does not limit the scope of the implementation.

[0096] In this way, the structure of setting multiple small segments on the large segment 42 can effectively enhance the heat conduction capacity, and multiple small segments 41 that are compatible with the PCB substrate 2 can be placed in one operation. Furthermore, the pre-assembly stability is further improved, and it has good assembly processability.

[0097] It should be noted that the long, large segment 42 is not limited to the straight strip shape shown in the figure. In actual application scenarios, it can be avoided according to the actual board layout, such as, but not limited to, a wavy long strip shape.

[0098] Please refer to Figure 7, which is a schematic diagram of another heat-conducting component provided in an embodiment of this application. As shown in Figure 7, the large-size segment 42 of the heat-conducting component 4d is bent, and three small-size segments 41 are spaced apart on the bent large-size segment 42. Each small-size segment 41 can be inserted into three through holes 24 (not shown in the figure) on the PCB substrate 2. In other implementations, a plurality of other small-size segments 41 can be provided on the large-size segment 42. This application embodiment does not limit the scope of the implementation.

[0099] It should also be noted that the large, bent segment 42 is not limited to the roughly right-angled shape shown in the figure. In actual application scenarios, it can be determined according to the actual board layout to provide good heat dissipation for power devices while taking into account the original functional layout of the product, thus having good adaptability.

[0100] For the MOS to be cooled in the double-sided package structure 10, the specific number and placement of the heat-conducting components 4 can be set according to the layout of the power devices. Please refer to Figures 8 and 9, where Figure 8 is a cross-sectional view of another double-sided package structure provided in this application embodiment, and Figure 9 is a schematic diagram of a usage state of the double-sided package structure shown in Figure 8. In order to clearly show the differences and connections between this embodiment and the scheme described in Figure 1, the same functional components or structures are indicated by the same markings in the figures.

[0101] Compared to the double-sided package structure described in Figure 1, the double-sided package structure 10a shown in Figure 8 has two of each of the first MOS 11, the second MOS 12, and the heat-conducting component 4. It should be understood that Figure 8 is a cross-sectional view of the double-sided package structure 10a, and the increase in the number of devices such as the first MOS 11, the second MOS 12, and the heat-conducting component 4 is not limited to the number shown in the cross-section.

[0102] As shown in Figure 9, the double-sided package structure 10a is soldered onto the system board 30. Based on the thermal conductive component 4, PCB copper (vias, copper foil, through holes), and metal layer 5, two continuous heat conduction paths are formed, as indicated by the dashed arrows in the figure. One path transfers heat to one side of the heat dissipation device 20, and the other path transfers heat to one side of the system board 30, thereby achieving heat equalization, heat transfer, and heat dissipation for the heat conducted by the thermal conductive component 4. In specific implementations, the overall layout of the double-sided package structure 10a can be determined according to different application scenarios. This application embodiment does not limit the scope of the implementation.

[0103] The other components and implementation methods of the double-sided packaging structure 10a are the same as those described in Figure 1, so they will not be repeated here.

[0104] The assembly process of the double-sided packaging structure 10a shown in Figure 8 is briefly described below with reference to Figure 10.

[0105] Step S601: Assemble the first MOS 11 on the first surface 21 of the PCB substrate 2. For example, but not limited to, the above-mentioned device assembly and fixation can be completed using SMT (Surface Mount Technology) process.

[0106] In step S602, the second MOS12 and the heat-conducting component 4 are assembled on the second surface 22 of the PCB substrate 2. The assembly and fixation can also be completed by SMT.

[0107] In step S603, a package is formed by double-sided encapsulation. The arrangement spacing or gap between the first MOS11, the second MOS12, the heat-conducting component 4 and the PCB substrate 2 is completely filled by the encapsulation filler 3. The PCB substrate 2 is coupled to the first MOS11, the second MOS12 and the heat-conducting component 4 as a whole.

[0108] Step S604: Grind the encapsulated body, so that the two ends of the heat-conducting component 4 are exposed on both sides of the encapsulated body; that is, the grinding process enables the two protruding ends of the heat-conducting component 4 to be located on the surface of the encapsulated body on their respective sides.

[0109] Step S605: Metallize the surface of the package.

[0110] In a practical implementation, a metallization process can be used to deposit a continuous metal plating layer 5A on the surface, sidewalls and end face of the heat-conducting component 4 of the package.

[0111] Step S606: Pattern the metal layer 5.

[0112] In practice, through patterning and surface treatment, the metal plating is formed into a solderable pattern. The patterned metal layer 5 can serve as a continuous heat conduction path and also as the pin of the double-sided package structure 10.

[0113] It should be understood that step S604 is an optional process. In other possible implementations, the encapsulation process precision can be used to ensure that the extended end of the heat-conducting component 4 is located on the surface of the package on the side where it is located.

[0114] In the aforementioned embodiment, both extended ends of the heat-conducting element extend to the surface of the package on their respective sides. In other implementations, the heat-conducting element may extend to the heat dissipation surface of the package only at one end. Please refer to Figures 11 and 12, where Figure 11 is a cross-sectional view of another double-sided package structure provided by an embodiment of this application, and Figure 12 is a schematic diagram of a usage state of the double-sided package structure shown in Figure 11. To clearly illustrate the differences and connections between this embodiment and the solutions described in Figures 1 and 8, components or structures with the same function are indicated by the same reference numerals in the figures.

[0115] As shown in Figure 11, this double-sided package structure 10b can also be a power SiP module. MOS is disposed on both sides of the PCB substrate 2. A first MOS 11 is disposed on the first side 21 of the PCB substrate 2, and a second MOS 12 is disposed on the second side 22 of the PCB substrate 2.

[0116] The vias 23 and through holes 24b spaced apart on the PCB substrate 2 are connected by copper foil 25. In a specific implementation, the copper foil 25 can be an intermediate copper foil layer. The MOS devices disposed on both sides of the PCB substrate 2 are connected to the vias 23 and transfer heat to the through holes 24b through the copper foil 25.

[0117] In this embodiment, the through hole 24b is a stepped hole, including a large-diameter section 241b and a small-diameter section 242b that are connected. The large-diameter section 241b is close to the first plate surface 21, and the heat-conducting component 4b is inserted in the large-diameter section 241b of the through hole 24b to achieve heat dissipation and airflow. The small-diameter section is close to the second plate surface 22. Here, the heat-conducting component 4b does not penetrate to the side where the second plate surface 22 is located, which can reduce the area occupied by the plate, so that more electronic components 7 can be arranged on the second plate surface 22, thereby increasing the layout density.

[0118] In addition, in PCB electroplating and reflow assembly processes, venting can be achieved through the small-diameter section 242b. For example, during the copper plating process on the sidewall of through-holes, it facilitates flux exchange and avoids poor flux exchange at the bottom of blind holes (which reduce the area occupied by heat-conducting components), thus affecting the plating quality of large-size buried holes. For another example, during reflow assembly, the flux can be discharged through the small-diameter section after evaporation, which can avoid the possibility of gas expansion and evaporation squeezing the solder paste, resulting in the solder paste and heat-conducting components not adhering properly and affecting the soldering yield.

[0119] In the insertion direction, the heat-conducting component 4b has a variable cross-section structure, including a small segment 41 and a large segment 42 connected together, with a stepped surface 43 between them. When the heat-conducting component 4 is inserted into the PCB substrate 2, it forms an assembly positioning, so that the heat-conducting component 4 maintains a pre-installation angle relative to the PCB substrate 2, which also has good pre-installation stability.

[0120] As shown in Figure 12, the double-sided package structure 10b is soldered onto the power supply backplane 50. The first MOS 11, located on the first board surface, is a power device on the non-heat-dissipating side, and the second MOS 12, located on the second board surface, is a power device on the heat-dissipating side. The heat dissipation path of the power device (first MOS) on the non-heat-dissipating side, formed by the thermal conductive component 4b, PCB copper (vias, copper foil, through holes), and metal layer 5, is shown by the dashed arrow in the figure.

[0121] It is understandable that the power device (second MOS) on the heat dissipation side can also achieve heat dissipation based on the thermal conductive component 4b, PCB copper and metal layer 5. In order to clearly illustrate the heat dissipation path on the non-heat dissipation side, it is not shown in the figure.

[0122] The other components and implementation methods of the double-sided packaging structure 10b can be the same as those described in Figures 1 and 8, so they will not be repeated here.

[0123] Temperature simulation tests were conducted using a surface-mount copper pillar heat dissipation scheme on the non-heat-dissipating side as a comparative example. Under the same test scenario, the MOS temperature on the non-heat-dissipating side reached 125℃ using the comparative surface-mount copper pillar scheme, which could not meet the product's thermal derating requirements. Using the double-sided package structure 10b described in Figure 11, the heat generated by each MOS is transferred to the thermal conductive component 4b through the PCB copper, and then efficiently transferred to the heat dissipation device 20 by the thermal conductive component 4b. The temperature gain on the non-heat-dissipating side is 6.5℃, and the temperature gain on the heat-dissipating side is 8℃, showing a significant improvement in heat dissipation.

[0124] Meanwhile, taking the implementation method of heat-conducting components through-holes as a comparative example, the double-sided packaging structure 10b described in Figure 11 is adopted. The through-holes 24b on its PCB substrate adopt a large and small hole structure, which can reduce the board area occupied on the non-heat-dissipating side by 85%, resulting in significant layout area benefits.

[0125] In the aforementioned implementation, the heat-conducting component 4 has a variable cross-section structure in the insertion direction to provide support and positioning through the stepped surface. In other possible implementations, the heat-conducting component can also have a constant cross-section structure, such as, but not limited to, a cylindrical shape (not shown in the figure), which can also achieve a heat dissipation path with low thermal resistance. The embodiments in this application are not limited.

[0126] The double-sided packaging structure implementation schemes described in the foregoing embodiments can be widely applied to various electronic devices that include power devices requiring heat dissipation. Please refer to Figure 13, which is a schematic diagram of an electronic device provided in an embodiment of this application.

[0127] As shown in Figure 13, the electronic device includes a housing 100 and a motherboard 200 and a power supply device 300 disposed within the housing 100. The power supply device 300 is electrically connected to the motherboard 200 and is used to supply power to the motherboard and the power devices on the motherboard. The power supply device 300 includes a power system-in-package module, which can be the double-sided packaging structure described in the foregoing embodiments.

[0128] Please refer to Figure 14, which is a schematic diagram of the architecture of a power supply device 300a provided in an embodiment of this application.

[0129] The power supply device 300a includes a system board 30, a power system-in-package module 10a, and a heat dissipation device 20. The power system-in-package module 10a is made using the double-sided packaging structure described in Figures 1 to 12 above and is soldered onto the system board 30. The heat dissipation device 20 contacts and exchanges heat with the other side of the power system-in-package module 10a.

[0130] Please refer to Figure 15, which is a schematic diagram of the architecture of another power supply device 300b provided in an embodiment of this application.

[0131] The power supply device 300b includes a system board 30, a power supply backplane 50, a power system-in-package module 10b, and a heat dissipation device 20. The power system-in-package module 10b is made using the double-sided packaging structure described in Figures 1 to 12 above and is soldered onto the power supply backplane 50. The heat dissipation device 20 is located on the same side as the power supply backplane 50, and the heat dissipation device 20 contacts the power system-in-package module 10b for heat exchange.

[0132] Of course, the aforementioned power supply devices 300a and 300b also include chips and tertiary power supply SIPs. Furthermore, to improve heat dissipation, a heat dissipation device is also provided on the chip side. The other functional components mentioned above can be implemented using existing technology, and therefore will not be elaborated upon here.

[0133] In specific implementations, the electronic device can be a smartphone, smart TV, smart TV set-top box, personal computer (PC), wearable device, smart broadband, etc. The embodiments in this application are not limited to this. Based on the double-sided packaging structure provided in the embodiments of this application, the heat generated by the power devices on the non-heat-dissipating side can be quickly dissipated to provide a good ambient temperature, improving product performance while ensuring the stable and reliable operation of the electronic device.

[0134] It should be understood that the other main functional components of this electronic device can be implemented using existing technologies, so they will not be described in detail here.

[0135] It should be noted that, in practical applications, the heat dissipation device corresponding to the heat dissipation surface of the power module can be a finned air-cooled heat sink or a liquid-cooled plate heat sink. Alternatively, the heat dissipation surface of the power module may be exposed to the application environment, meaning that the heat dissipation surface of the package directly exchanges heat with the air. This application does not limit the scope of the embodiments.

[0136] The above are merely preferred embodiments of the present invention. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A double-sided packaging structure, characterized in that, The device includes a PCB substrate, power devices, and heat-conducting components. The power devices are disposed on both sides of the PCB substrate. The heat-conducting components are inserted into the PCB substrate and encapsulated to form a package. The package includes a heat dissipation surface, which is opposite to one side of the PCB substrate. The PCB substrate has vias and through holes, and the vias and through holes are connected by copper foil on the PCB substrate. The via is connected to at least one power device disposed on the other side of the PCB substrate, the heat-conducting component is inserted into the via, and one end of the heat-conducting component extends to the heat dissipation surface of the package.

2. The double-sided packaging structure according to claim 1, characterized in that, The power devices located on both sides of the PCB substrate are all connected to the vias.

3. The double-sided packaging structure according to claim 1 or 2, characterized in that, The power device is connected to one or more of the vias.

4. The double-sided packaging structure according to any one of claims 1 to 3, characterized in that, The via is connected to one or more layers of copper foil.

5. The double-sided packaging structure according to any one of claims 1 to 4, characterized in that, The copper foil is connected to one or more of the through holes.

6. The double-sided packaging structure according to any one of claims 1 to 5, characterized in that, The package has two opposing surfaces and sides covered with metal layers, the metal layers including a surface metal layer on the surface of the package and a side metal layer on the side of the package, and the side metal layer is connected to the two surface metal layers respectively; the end of the heat-conducting component is connected to the surface metal layer on the side where it is located.

7. The double-sided packaging structure according to claim 6, characterized in that, The surface metal layer of the metal layer is patterned to form the pins of the double-sided package structure.

8. The double-sided packaging structure according to any one of claims 1 to 7, characterized in that, In the insertion direction, the other end of the heat-conducting element extends to the non-heat-dissipating surface of the package, and the non-heat-dissipating surface and the heat-dissipating surface are two opposing surfaces of the package.

9. The double-sided packaging structure according to any one of claims 1 to 7, characterized in that, The through hole includes a large-diameter section and a small-diameter section that are connected to each other, and the heat-conducting element is inserted into the large-diameter section of the through hole.

10. The double-sided packaging structure according to any one of claims 1 to 9, characterized in that, The heat-conducting component includes a small segment and a large segment connected together, with a stepped surface between them; the small segment is inserted into a through hole in the PCB substrate, and the stepped surface abuts against the surface of the PCB substrate.

11. The double-sided packaging structure according to claim 10, characterized in that, Multiple smaller segments are spaced apart on the larger segment.

12. The double-sided packaging structure according to claim 11, characterized in that, The large segment is long and narrow or bent.

13. The double-sided packaging structure according to any one of claims 1 to 12, characterized in that, The power device includes a field-effect transistor.

14. The double-sided packaging structure according to any one of claims 1 to 13, characterized in that, The double-sided packaging structure also includes multiple electronic components; at least one of the multiple electronic components is a capacitor or a resistor, and is disposed on at least one side of the PCB substrate.

15. A power supply device, characterized in that, The power supply device includes a system board, a power system-in-package module, and a heat dissipation device. The power system-in-package module is made using the double-sided packaging structure of any one of claims 1 to 14 and is soldered onto the system board. The heat dissipation device exchanges heat with the other side of the power system-in-package module.

16. A power supply device, characterized in that, The power supply device includes a system board, a power supply backplane, a power system-in-package module, and a heat dissipation device. The power system-in-package module is made using the double-sided packaging structure of any one of claims 1 to 14 and is soldered onto the power supply backplane. The heat dissipation device is located on the same side as the power supply backplane, and the heat dissipation device exchanges heat with the power system-in-package module.

17. An electronic device, characterized in that, It includes a motherboard and a power supply device as described in claim 15 or 16, the power supply device being disposed on the motherboard.

Images