Light source apparatus

Abstract

Provided in the embodiments of the present application are a light source apparatus. The light source apparatus comprises a substrate, a packaging enclosure, a light-emitting unit, a fluorescence conversion layer and a filter film, wherein the light-emitting unit is arranged on the surface of the substrate, the fluorescence conversion layer is a fluorescent ceramic layer or a sapphire fluorescent layer, the fluorescence conversion layer is attached to the surface of the light-emitting unit that is away from the substrate, and the filter film is arranged on the surface of the fluorescence conversion layer that is away from the light-emitting unit. The filter film can filter out residual exciting light mixed in excited light, thereby ensuring the quality of light rays of the light source apparatus. Since the filter film can ensure the purity of the excited light, it is not necessary to increase the thickness of a fluorescent powder layer to ensure the conversion effect of the light rays. Thus, the fluorescence conversion layer can be made thinner, the thinner fluorescence conversion layer can reduce the heat dissipation distance of the light source apparatus, the generated heat can be conducted to the substrate more quickly; moreover, and heat dissipation is performed by means of the substrate. The fluorescent ceramic layer or the sapphire fluorescent layer can further improve the heat propagation rate, thereby improving the heat dissipation effect, and avoiding affecting the power increase of the light source apparatus.

Description

Light source device Technical Field

[0001] The present application relates to the technical field of light source equipment, and in particular to a light source device. Background Art

[0002] The light source device supplies power to both ends of the light-emitting chip. Once powered, the chip projects light, which is then absorbed by the phosphor layer and emitted as desired. As light source technology continues to evolve, the brightness of the light source device continues to increase. However, this also comes with the increasing power consumption of the light source device, which causes significant heat generation in components such as the light-emitting chip and phosphor layer.

[0003] Existing technology dissipates heat from the light-emitting chip, etc., by transferring it to the circuit board. To ensure the purity of the emitted light, the distance the light travels within the phosphor layer can be increased to ensure sufficient conversion within the phosphor layer. However, as the thickness of the phosphor layer increases, the heat dissipation distance also increases, further exacerbating the heating problem in the phosphor layer. This heating problem limits the maximum power of the light source device, thereby affecting the light intensity and light quality of the light source device. Furthermore, it may pose a safety hazard.

[0004] Utility Model Content

[0005] The embodiments of the present application provide a light source device to at least partially improve the above technical problems.

[0006] An embodiment of the present application provides a light source device, including a substrate, a packaging enclosure, a light-emitting unit, a fluorescent conversion layer, and a filter film. The packaging enclosure is arranged on the substrate and encloses a packaging space. The light-emitting unit is arranged on the surface of the substrate and is located in the packaging space. The light-emitting unit is used to emit excitation light. The fluorescent conversion layer is a fluorescent ceramic layer or a sapphire fluorescent layer. The fluorescent conversion layer is attached to the surface of the light-emitting unit away from the substrate. The fluorescent conversion layer is used to receive excitation light and emit converted light. The filter film is arranged on the surface of the fluorescent conversion layer away from the light-emitting unit. The filter film is used to filter out the excitation light and transmit the converted light.

[0007] In one embodiment, the fluorescent conversion layer is a fluorescent ceramic layer, and the thickness of the fluorescent ceramic layer is less than or equal to 0.2 mm.

[0008] In one embodiment, the fluorescent conversion layer is a sapphire fluorescent layer, which includes a sapphire layer and a phosphor layer. The phosphor layer is arranged on the surface of the sapphire layer close to the light-emitting unit, and the filter film is arranged on the surface of the sapphire layer away from the light-emitting unit.

[0009] In one embodiment, the thickness of the sapphire layer is less than or equal to 0.2 mm.

[0010] In one embodiment, the thickness of the phosphor layer is less than or equal to 0.05 mm.

[0011] In one embodiment, the light emitting unit includes an LED chip, which is electrically connected to the substrate. The light source device further includes a heat conducting layer, which is bonded between the LED chip and the fluorescent conversion layer.

[0012] In one embodiment, the heat-conducting layer is a heat-conducting silicone layer.

[0013] In one embodiment, the orthographic projection area of ​​the phosphor conversion layer on the substrate is smaller than the orthographic projection area of ​​the LED chip on the substrate.

[0014] In one embodiment, the LED chip and the phosphor conversion layer satisfy the following relationship: l2+0.1mm≤l1≤l2+0.2mm, d2+0.1mm≤d1≤d2+0.2mm

[0015] Wherein, l1 is the length of the LED chip, l2 is the length of the phosphor conversion layer, d1 is the width of the LED chip, and d2 is the width of the phosphor conversion layer.

[0016] In one embodiment, a surface of the encapsulation enclosure remote from the substrate is flush with a surface of the phosphor conversion layer remote from the light-emitting unit.

[0017] In the light source device provided by the embodiment of the present application, the light-emitting unit is arranged on the substrate, and the light-emitting unit emits excitation light toward the fluorescent conversion layer. The excitation light passes through the fluorescent conversion layer, and the fluorescent conversion layer can receive the excitation light and emit the converted light. The filter film can filter out the remaining excitation light mixed in the converted light, improve the purity of the converted light, and ensure the light quality of the light source device. Since the filter film can ensure the purity of the converted light, there is no need to increase the thickness of the phosphor layer to ensure the light conversion effect. Furthermore, the fluorescent conversion layer can be set thinner, and a thinner fluorescent conversion layer can reduce the heat dissipation distance of the light source device, and the generated heat can be conducted to the substrate faster and dissipated through the substrate. In addition, the fluorescent conversion layer can be a fluorescent ceramic layer or a sapphire fluorescent layer. The fluorescent ceramic layer or the sapphire fluorescent layer has the advantages of high thermal conductivity, high heat resistance, etc., which can further increase the heat transfer rate, increase the heat dissipation effect, and avoid the power increase of the light source device being affected by heat dissipation problems. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0019] FIG1 is a schematic structural diagram of a light source device proposed in an embodiment of the present application;

[0020] FIG2 is a schematic structural diagram of another light source device proposed in an embodiment of the present application;

[0021] FIG3 is a schematic structural diagram of another light source device proposed in an embodiment of the present application.

[0022] FIG4 is a spectrum diagram of a fluorescent conversion layer proposed in an embodiment of the present application;

[0023] FIG5 is a spectrum diagram of another fluorescent conversion layer proposed in an embodiment of the present application.

[0024] Figure numerals: light source device 100, substrate 10, welding layer 11, packaging enclosure 20, packaging space 21, light-emitting unit 30, LED chip 31, fluorescent conversion layer 40, fluorescent ceramic layer 41, sapphire fluorescent layer 42, sapphire layer 421, phosphor layer 422, filter film 50, thermal conductive layer 60. DETAILED DESCRIPTION

[0025] In order to enable those skilled in the art to better understand the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of this application.

[0026] In this application, unless otherwise expressly specified or limited, terms such as "mounted," "connected," and "fixed" should be interpreted broadly. For example, these terms may refer to fixed, removable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediary; internal communication between two components; surface contact only; or surface contact through an intermediary. Those skilled in the art will understand the specific meanings of these terms in this application based on the specific circumstances.

[0027] In addition, the terms "first", "second", etc. are only used to distinguish descriptions and should not be understood as specific or special structures. The descriptions of the terms "some embodiments", "other embodiments", etc. mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this application, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine the different embodiments or examples described in this application and the features of the different embodiments or examples, unless they are contradictory.

[0028] Example

[0029] An embodiment of the present application provides a light source device 100, please refer to Figure 1, the light source device 100 may include a substrate 10, an encapsulation enclosure 20, a light-emitting unit 30, a fluorescent conversion layer 40 and a filter film 50. The light-emitting unit 30 is arranged on the substrate 10, and the light-emitting unit 30 is electrically connected to the substrate 10, and the light-emitting unit 30 can be powered by the substrate 10. After being energized, the light-emitting unit 30 emits excitation light in a direction away from the substrate 10, and the excitation light propagates to the fluorescent conversion layer 40. The fluorescent conversion layer 40 absorbs the excitation light and emits stimulated light. Another part of the excitation light is not excited by the fluorescent conversion layer 40, and this part of the excitation light is propagated to the filter film 50 together with the stimulated light. The filter film 50 filters out this part of the excitation light, and the stimulated light can pass through the filter film 50, thereby ensuring the quality of the output light of the light source device 100. Furthermore, the packaging enclosure 20 can enclose a packaging space 21 , and the light-emitting unit 30 is disposed in the packaging space 21 , which can prevent external moisture from entering the light source device 100 , ensure the normal use of the light-emitting unit 30 , and improve the service life of the light source device 100 .

[0030] It is understandable that the filter film 50 shown in Figure 1 protrudes from the packaging enclosure 20 only for the convenience of reference and distinction. The filter film 50 in this embodiment can also be configured to be very thin, and then the filter film 50 can also be set flush with the packaging enclosure 20.

[0031] In this embodiment, referring again to FIG. 1 , the light-emitting unit 30 can be disposed on the surface of the substrate 10. The light-emitting unit 30 can be disposed on the surface of the substrate 10 by welding, bonding, or other methods. Furthermore, the light-emitting unit 30 is located within the encapsulation space 21. The encapsulation space 21 prevents external moisture from entering the light source device 100 through side gaps, thereby improving the protection capability of the light source device 100 and increasing its service life. The light-emitting unit 30 can be used to emit excitation light. Different types of light-emitting units 30 can be used, and the phosphor conversion layer 40 can receive excitation light of different wavelengths. Furthermore, the light-emitting unit 30 can include a light-emitting diode (LED) chip 31, which is electrically connected to the substrate 10. The substrate 10 can supply power to the LED chip 31, which then emits excitation light. In one embodiment, the number of LED chips 31 can be one or more, and can be selected and designed based on specific light output brightness requirements, such as the illumination area and light intensity, which are not limited in this embodiment. For example, the plurality of LED chips 31 are spaced apart, which can improve the heat dissipation effect of the light-emitting unit 30. In addition, the plurality of LED chips 31 can be arranged and distributed along two different directions so that the LED chips 31 are arranged to form an array of light-emitting units 30, thereby achieving a larger illumination range.

[0032] In one embodiment, the LED chip 31 can be configured as a blue LED chip or an LED chip of another color. The LED chip 31 emits excitation light, which is received by the phosphor conversion layer 40 and emitted as converted light. The converted light and the excitation light have different wavelengths. The selection and design of the LED chip 31 and the phosphor conversion layer 40 can be determined based on the usage scenario and requirements of the light source device 100, and this embodiment does not limit the design.

[0033] In this embodiment, please continue to refer to Figure 1. The substrate 10 can be made of a metal plate, which has good heat dissipation, high strength and long service life. The metal plate can allow the heat in the light-emitting unit 30 to be discharged faster, ensuring the safety of the light-emitting unit 30. For example, the substrate 10 can be made of a copper substrate 10, which has high thermal conductivity, corrosion resistance and strong stability. Preferably, the thermal conductivity of the substrate 10 can increase as the size of the substrate 10 increases. The larger the size of the substrate 10, the more dispersed the heat can be spread. The dimensional parameters of the substrate 10 should be designed by weighing the thermal conductivity, the internal space of the light source device 100 and the strength requirements of the substrate 10. For example, the thickness of the substrate 10 can be 3 mm. At this thickness, the substrate 10 has a certain strength and occupies an appropriate space.

[0034] In one embodiment, a soldering layer 11 may be provided on the surface of the substrate 10. The substrate 10 may also be provided with circuits, with the soldering layer 11 electrically connected to the circuits. The light-emitting unit 30 may be soldered to the soldering layer 11 using silver paste or eutectic techniques. External devices, power supply devices, or other components within the substrate 10 may be electrically connected to the light-emitting unit 30 via the circuits, which may be used to transmit current and related signals. Furthermore, to address the issue of severe heat generation within the light-emitting unit 30, the LED chip 31 may be provided with a metal heat sink. The heat dissipation pad may be connected to the circuitry within the light-emitting unit 30 via the metal heat sink, thereby dissipating heat from within the light-emitting unit 30 and further reducing the operating temperature of the light-emitting unit 30.

[0035] In one embodiment, in order to further improve the heat dissipation effect of the substrate 10 and reduce the operating temperature of the light-emitting unit 30, a plurality of heat dissipation fins are provided on the surface of the substrate 10 away from the light-emitting unit 30. The heat of the light-emitting unit 30 can be transferred to the heat dissipation fins, and the plurality of heat dissipation fins are evenly spaced, and the air flow can pass between the plurality of heat dissipation fins and take away the heat of the heat dissipation fins. The heat dissipation fins can increase the contact area between the substrate 10 and the atmosphere, and improve the heat exchange efficiency between the substrate 10 and the atmosphere. The heat dissipation effect of the substrate 10 is enhanced, and the heat of the light-emitting unit 30 can be quickly transferred to the atmosphere. The heat dissipation problem can be avoided from affecting the power of the light-emitting unit 30, and the light source device 100 can emit lighting with greater light intensity. Preferably, a fan can be provided on one side of the heat dissipation fins, and the fan drives the air flow through the heat dissipation fins, which can further improve the heat exchange effect.

[0036] The encapsulation enclosure 20 is provided on the substrate 10 and encloses an encapsulation space 21. Exemplarily, the encapsulation enclosure 20 can be formed by applying white wall glue to the substrate 10 through a spot coating process or the like to form a semi-enclosed space with an opening. The light-emitting surface of the light-emitting unit 30 and the opening are arranged relative to each other, and most of the light emitted by the light-emitting unit 30 can be emitted from the opening. The fluorescent conversion layer 40 can be provided on the light-emitting surface of the light-emitting unit 30, and the fluorescent conversion layer 40 absorbs the excitation light and emits the stimulated light. Another part of the stimulated light can be emitted onto the encapsulation enclosure 20, absorbed by the encapsulation enclosure 20 or reflected to the fluorescent conversion layer 40, so as to be absorbed by the fluorescent conversion layer 40 again.

[0037] Preferably, the surface of the encapsulating enclosure 20 facing away from the substrate 10 is flush with the surface of the phosphor conversion layer 40 facing away from the light-emitting unit 30. The encapsulating enclosure 20 completely blocks the sides of the phosphor conversion layer 40, preventing some light from being emitted from the sides of the phosphor conversion layer 40. This allows light to pass smoothly through the phosphor conversion layer 40 and the filter film 50, ensuring the conversion effect of the phosphor conversion layer 40 and the filtering effect of the filter film 50. This also prevents the encapsulating enclosure 20 from being too high, preventing a large amount of light from being absorbed by the encapsulating enclosure 20 and ensuring efficient energy utilization.

[0038] The fluorescent conversion layer 40 is attached to the surface of the light-emitting unit 30 away from the substrate 10, and the fluorescent conversion layer 40 is located in the optical path of the excitation light emitted by the light-emitting unit 30. The fluorescent conversion layer 40 can be used to receive the excitation light and emit the stimulated light. Compared with the excitation light, the stimulated light has a different wavelength band. In one embodiment, the emission wavelength range of the excitation light can be a first wavelength band, and the fluorescent conversion layer 40 emits the stimulated light, and the wavelength range of the stimulated light can be a second wavelength band, and the first wavelength band is larger than the second wavelength band, so that the emitted light of the light source device 100 can meet the use requirements of subsequent equipment. Exemplarily, the excitation light can be blue light, and the fluorescent conversion layer 40 can use yellow phosphor, which absorbs the blue light wavelength and converts it into yellow light. The yellow light is emitted to the subsequent equipment for use by the subsequent equipment.

[0039] Alternatively, the yellow light can be combined with the remaining blue photosynthetic light to form white light, which is emitted to subsequent devices in the form of white light for use by the subsequent devices.

[0040] As parameters such as the maximum power and light intensity of the light source device 100 increase, the temperature of the fluorescent conversion layer 40 also increases. Continuing with FIG1 , the light source device 100 in this embodiment can utilize a fluorescent conversion layer 40 having properties such as good heat carrying capacity and high thermal conductivity. For example, the fluorescent conversion layer 40 can be a fluorescent ceramic layer 41 or a sapphire fluorescent layer 42, so that the fluorescent conversion layer 40 can have properties such as high thermal conductivity, good thermal stability, high temperature resistance, and corrosion resistance. Specifically, heat from the fluorescent conversion layer 40 can be transferred to the LED chip 31, then conducted from the LED chip 31 to the substrate 10, and then dissipated through the substrate 10. The high thermal conductivity of the fluorescent conversion layer 40 can further improve heat dissipation efficiency. Furthermore, the fluorescent conversion layer 40 can have good thermal stability and maintain stable thermal conductivity in high-temperature environments. The fluorescent conversion layer 40 can withstand excitation with higher excitation light powers and is less susceptible to light quenching, thereby ensuring the maximum power and light intensity of the light source device 100. The fluorescent conversion layer 40 may also have good high temperature resistance and corrosion resistance, can resist the effects of long-term high temperature and chemical corrosion, maintain long-term effective thermal conductivity, and effectively improve the protection capability of the light source device 100.

[0041] Preferably, referring to FIG. 2 , the light source device 100 in this embodiment may further include a heat-conducting layer 60, which may be bonded between the LED chip 31 and the fluorescent conversion layer 40. Light will be emitted from the LED chip 31, pass through the heat-conducting layer 60, and reach the fluorescent conversion layer 40. The heat-conducting layer 60 may be arranged to be light-transmissive to prevent the heat-conducting layer 60 from affecting the propagation of light, thereby ensuring the intensity of the emitted light from the light source device 100. Furthermore, the heat-conducting layer 60 is bonded to the LED chip 31 and the fluorescent conversion layer 40 so that the LED chip 31 and the fluorescent conversion layer 40 are arranged in an integrated manner. This ensures the firmness of the connection between the LED chip 31 and the fluorescent conversion layer 40, thereby improving the structural strength and protective performance of the light source device 100. The heat-conducting layer 60 may have good thermal conductivity, which may increase the heat transfer rate between the LED chip 31 and the fluorescent conversion layer 40. For example, the thermally conductive layer 60 can be a thermally conductive silicone layer. This layer has excellent thermal conductivity, insulation, and weather resistance, preventing electrical leakage from the LED chip 31. Furthermore, the thermally conductive silicone layer is easy to apply or fill, and can be effectively positioned between the LED chip 31 and the phosphor conversion layer 40, increasing the contact area between the two and improving heat transfer efficiency, thereby ensuring heat dissipation from the phosphor conversion layer 40. Furthermore, the thermally conductive silicone layer is resistant to aging or deterioration, thereby extending the service life of the thermally conductive layer 60.

[0042] In one embodiment, please continue to refer to Figure 1. The fluorescent conversion layer 40 can be a fluorescent ceramic layer 41. The fluorescent ceramic layer 41 can include a ceramic matrix and a fluorescent material arranged on the ceramic matrix. For example, the fluorescent material can be fluorescent powder particles, and the fluorescent powder particles can be doped in the ceramic matrix. According to the different use requirements of the light source device 100, fluorescent materials of different types and specifications can be selected so that the fluorescent conversion layer 40 can adapt to the light-emitting unit 30. Furthermore, the ceramic matrix has sufficient mechanical strength, good heat resistance, etc., so that the fluorescent ceramic layer 41 can maintain stable fluorescent performance in a high-temperature environment, is suitable for use in a high-temperature environment, and realizes high-efficiency and high-stability fluorescence conversion. Preferably, the ceramic matrix can be a porous loose ceramic with a plurality of pores in the ceramic matrix, which is conducive to heat exchange between the fluorescent conversion layer 40 and the air, and ensures the working temperature of the fluorescent conversion layer 40.

[0043] Preferably, in order to further improve the heat dissipation effect of the fluorescent ceramic layer 41, the thickness of the fluorescent ceramic layer 41 can be less than or equal to 0.2 mm. The thinner the fluorescent ceramic layer 41, the shorter the heat dissipation path from the fluorescent conversion layer 40 through the light-emitting unit 30 to the substrate 10, and the lower the thermal resistance, thereby ensuring that heat can be transferred from the fluorescent conversion layer 40 to the substrate 10 more quickly, and dissipated through the substrate 10, ensuring that the operating temperature of the fluorescent conversion layer 40 is lower. The fluorescent conversion layer 40 can withstand the excitation of higher-power light and thermal shock, which can increase the power and light intensity of the light source device 100, and can also ensure the safety and service life of the light source device 100. In addition, because the fluorescent ceramic layer 41 has high fluorescence conversion efficiency and excellent structural performance, even if the fluorescent conversion layer 40 is set thinner, it can still ensure the quality of the emitted light and the structural performance of the light source device 100.

[0044] In another embodiment, please continue to refer to Figure 3. The fluorescent conversion layer 40 can be a sapphire fluorescent layer 42. Further, the sapphire fluorescent layer 42 can include a sapphire layer 421 and a phosphor layer 422. The sapphire layer 421 has excellent heat resistance and thermal conductivity. For example, under certain conditions, the thermal conductivity of sapphire at room temperature can be about 25W / (m·K)-40W / (m·K), which is higher than the thermal conductivity of most non-metallic materials. In addition, the thermal conductivity of the sapphire layer 421 can be further improved by heat treatment and other methods. Depending on the different usage requirements of the fluorescent conversion layer 40, different types and specifications of phosphor layers 422 can be selected so that the fluorescent conversion layer 40 can be adapted to the light-emitting unit 30.

[0045] The phosphor layer 422 is disposed on the surface of the sapphire layer 421 near the light-emitting unit 30. When the excitation light is emitted to the phosphor conversion layer 40, it first enters the phosphor layer 422. The excitation light is absorbed by the phosphor layer 422 and emitted as converted light, which then passes through the sapphire layer 421. The sapphire layer 421 provides support for the phosphor layer 422, ensuring its structural strength. Furthermore, the phosphor layer 422 is disposed on the side of the sapphire layer 421 near the light-emitting unit 30, which allows heat within the phosphor layer 422 to be transferred to the light-emitting unit 30 more quickly, reducing its operating temperature.

[0046] The filter film 50 can be positioned on the surface of the sapphire layer 421 away from the light-emitting unit 30. A portion of the excitation light is absorbed by the phosphor layer 422. The converted light emitted by the phosphor layer 422 can pass through the sapphire layer 421 and propagate to the filter film 50. Excess converted light is filtered out by the filter film 50, causing the temperature of the filter film 50 to rise. The sapphire layer 421 absorbs heat from the filter film 50 and, through its efficient thermal conductivity, transfers the heat to the substrate 10. Heat is dissipated to the air through the substrate 10, reducing the operating temperature of the filter film 50 and ensuring the safe operation of the light source device 100.

[0047] More specifically, in this embodiment, the thickness of the sapphire layer 421 can be less than or equal to 0.2 mm, and the thickness of the phosphor layer 422 can be less than or equal to 0.05 mm. The thinner the phosphor layer 422 and sapphire layer 421 are, the shorter the heat dissipation path from the phosphor conversion layer 40 through the light-emitting unit 30 to the substrate 10, resulting in lower thermal resistance. This ensures faster heat transfer from the filter film 50 and the phosphor conversion layer 40 to the substrate 10, where heat is dissipated through the substrate 10, ensuring a lower operating temperature for the phosphor conversion layer 40. Because the sapphire layer 421 has excellent structural properties, the structural performance of the light source device 100 can be maintained even with a thinner phosphor layer 422. Furthermore, since the filter film 50 is provided on the side of the sapphire layer 421 away from the phosphor layer 422, the filter film 50 can filter out excess excitation light. Therefore, even with a thinner phosphor conversion layer 40, the filter film 50 can still maintain the light quality of the light source device 100.

[0048] In this embodiment, referring again to FIG. 1 , if the area of ​​the phosphor conversion layer 40 is too large, it may extend beyond the effective illumination range of the LED chip 31, resulting in uneven light absorption by the phosphor conversion layer 40. In this embodiment, the orthographic projection area of ​​the phosphor conversion layer 40 on the substrate 10 is smaller than the orthographic projection area of ​​the LED chip 31 on the substrate 10. This ensures that the phosphor conversion layer 40 is within the effective illumination range of the LED chip 31, ensuring sufficiently uniform light transmission to the phosphor conversion layer 40 and improving light quality.

[0049] More specifically, in order to improve the conversion effect of the fluorescent conversion layer 40 and ensure the lighting range of the light source device 100, the LED chip 31 and the fluorescent conversion layer 40 can satisfy the following relationship: l2+0.1mm≤l1≤l2+0.2mm, d2+0.1mm≤d1≤d2+0.2mm

[0050] Wherein, l1 is the length of the LED chip 31, l2 is the length of the fluorescent conversion layer 40, d1 is the width of the LED chip 31, and d2 is the width of the fluorescent conversion layer 40. For example, the length of the fluorescent conversion layer 40 can be 2 mm, the length range of the LED chip 31 can be configured to be 2.1 mm-2.2 mm, the width of the fluorescent conversion layer 40 can be 1 mm, and the width range of the LED chip 31 can be configured to be 1.1 mm-2.2 mm. This can ensure that the fluorescent conversion layer 40 is within the effective illumination range of the LED chip 31, so that the light transmitted to the fluorescent conversion layer 40 is sufficiently uniform, thereby improving the quality of the light. It can also prevent the area of ​​the fluorescent layer from being too small to affect the light output efficiency of the light source device 100, thereby ensuring the light output efficiency and illumination range of the light source device 100.

[0051] Continuing with Figure 1 , the filter film 50 in this embodiment can be disposed on the surface of the fluorescence conversion layer 40 away from the light-emitting unit 30. The filter film 50 filters out unabsorbed excitation light. Furthermore, the filter film 50 transmits the converted light, ensuring smooth emission. For example, the excitation light can be blue, and the converted light can be yellow. Because some of the excitation light is not absorbed by the fluorescence conversion layer 40, the light emitted from the fluorescence conversion layer 40 includes both yellow and blue light. To ensure the quality of the light emitted from the fluorescence conversion layer 40, the filter film 50 can be configured to filter out blue light while transmitting yellow light. In one embodiment, the filter film 50 filters out blue light while transmitting yellow and green light. As shown in Figure 4 , a spectrum of the light emitted from the filter film 50 is shown. The horizontal axis in Figure 4 represents the wavelength of the light transmitted by the filter film 50, in nanometers (nm), and the vertical axis represents the transmittance of the filter film 50 for different wavelengths, in percentages (%). As shown in Figure 4 , light passing through filter 50 with a wavelength range of 480nm-600nm, i.e., the wavelength range of yellow and green light, is nearly 100% transmitted. However, light passing through filter 50 with a wavelength range of 450nm-480nm, i.e., blue light, is barely transmitted. This demonstrates that filter 50 of the present application effectively filters out blue light, resulting in yellow and green light being emitted by light source device 100. This improves the purity of the emitted light and ensures the quality of the light emitted by light source device 100.

[0052] In another embodiment, the filter film 50 can filter out blue light while transmitting red light. As shown in FIG5 , FIG5 shows a spectrum of light emitted by the filter film 50. The horizontal axis in FIG5 represents the wavelength of light transmitted by the filter film 50, measured in nanometers (nm), and the vertical axis represents the transmittance of the filter film 50 for different light wavelengths, measured in percentages (%). FIG5 shows that the filter film 50 has a very high transmittance of light with a wavelength range greater than 560 nm, exceeding 80%, which is the wavelength range in which the filter film 50 transmits red light. However, the transmittance of blue light within the wavelength range of 450 nm to 480 nm is almost zero. Thus, the filter film 50 of the present application can effectively filter out blue light, resulting in red light being emitted by the light source device 100. This improves the purity of the emitted light and ensures the quality of the light emitted by the light source device 100.

[0053] In another embodiment, the excitation light may be blue light, and the stimulation light may be yellow light. The yellow light and a portion of the blue light combine to form white light. However, a portion of the blue light is neither absorbed by the fluorescent conversion layer 40 nor combined with the yellow light. The light emitted by the fluorescent conversion layer 40 includes blue light and white light, and the light is overall bluish-white, resulting in poor light purity. The filter film 50 in this embodiment can filter out excess blue light, ensuring that the light emitted by the fluorescent conversion layer 40 is only white light, thereby improving the purity of the emitted light and ensuring the light quality of the light source device 100.

[0054] In the light source device 100 provided in the embodiment of the present application, the light-emitting unit 30 is arranged on the substrate 10, and the light-emitting unit 30 emits excitation light toward the fluorescent conversion layer 40. The excitation light passes through the fluorescent conversion layer 40, and the fluorescent conversion layer 40 can receive the excitation light and emit the stimulated light. The filter film 50 can filter out the remaining excitation light mixed in the stimulated light, improve the purity of the emitted light, and ensure the light quality of the light source device 100. Since the filter film 50 can ensure the purity of the stimulated light, there is no need to ensure the purity of the light by increasing the thickness of the phosphor layer 422. Furthermore, the fluorescent conversion layer 40 can be set to be thinner, and the thinner fluorescent conversion layer 40 can reduce the heat dissipation distance of the light source device 100, and the generated heat can be conducted to the substrate 10 faster and dissipated through the substrate 10. In addition, the fluorescent conversion layer 40 can be a fluorescent ceramic layer 41 or a sapphire fluorescent layer 42. The fluorescent ceramic layer 41 or the sapphire fluorescent layer 42 has the advantages of high thermal conductivity and high heat resistance, which can further improve the heat transfer rate and increase the heat dissipation effect, thereby avoiding the power increase of the light source device 100 being affected by heat dissipation problems.

[0055] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the various embodiments of the present application, and should all be included in the scope of protection of the present application.

Claims

1. A light source device, characterized in that, Comprising: Substrate; Encapsulation enclosure, the encapsulation enclosure is disposed on the substrate and encloses an encapsulation space; Light-emitting unit, the light-emitting unit is disposed on the surface of the substrate and within the encapsulation space, the light-emitting unit is used for emitting excitation light; Fluorescent conversion layer, the fluorescent conversion layer is a fluorescent ceramic layer or a sapphire fluorescent layer, the fluorescent conversion layer is attached to the surface of the light-emitting unit away from the substrate, the fluorescent conversion layer is used for receiving the excitation light and emitting stimulated light; And Filter film, the filter film is disposed on the surface of the fluorescent conversion layer away from the light-emitting unit, the filter film is used for filtering the excitation light and transmitting the stimulated light.

2. The light source device according to claim 1, wherein The fluorescent conversion layer is a fluorescent ceramic layer, and the thickness of the fluorescent ceramic layer is less than or equal to 0.2 mm.

3. The light source device according to claim 1, wherein The fluorescent conversion layer is a sapphire fluorescent layer, the sapphire fluorescent layer includes a sapphire layer and a phosphor layer, the phosphor layer is disposed on the surface of the sapphire layer close to the light-emitting unit, and the filter film is disposed on the surface of the sapphire layer away from the light-emitting unit.

4. The light source device according to claim 3, wherein The thickness of the sapphire layer is less than or equal to 0.2 mm.

5. The light source device according to claim 3, characterized in that, The thickness of the phosphor layer is less than or equal to 0.05 mm.

6. The light source device according to claim 1, characterized in that The light-emitting unit includes an LED chip, the LED chip is electrically connected to the substrate, and the light source device further includes a heat-conducting layer, and the heat-conducting layer is bonded between the LED chip and the fluorescent conversion layer.

7. The light source device according to claim 6, wherein The heat-conducting layer is a heat-conducting silicone layer.

8. The light source device according to claim 6, wherein The orthographic projection area of the fluorescent conversion layer on the substrate is smaller than the orthographic projection area of the LED chip on the substrate.

9. The light source device according to claim 8, characterized in that, The LED chip and the fluorescent conversion layer satisfy the following relationship: l2 + 0.1 mm ≤ l1 ≤ l2 + 0.2 mm, d2 + 0.1 mm ≤ d1 ≤ d2 + 0.2 mm Wherein, l1 is the length of the LED chip, l2 is the length of the fluorescent conversion layer, d1 is the width of the LED chip, and d2 is the width of the fluorescent conversion layer.

10. The light source device according to claim 1, characterized in that, The surface of the encapsulation enclosure away from the substrate is flush with the surface of the fluorescent conversion layer away from the light-emitting unit.

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