Electronic device

Abstract

HMDs are worn on a user's head, and therefore, weight reduction is desired. The present invention realizes an HMD that is lightweight, has a wide adjustable range, and can be smoothly put on to a user's head. A flexible secondary battery is used as one power supply to this head-mounted device, and is disposed close to the occipital region. Having such flexibility means that it is possible to realize the HMD which can be bent according to the shape of the occipital region of the user, and which can be smoothly put on to the user's head.

Description

electronic equipment

[0001] FIELD OF THE INVENTION One embodiment of the present invention relates to an electronic device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the technical field of one embodiment of the present invention disclosed in this specification and the like include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, an input device, an input / output device, a driving method thereof, or a manufacturing method thereof.

[0003] In recent years, head-mounted display (HMD) type electronic devices suitable for applications such as virtual reality (VR), augmented reality (AR), etc. HMDs are head-mounted devices that can display images 360 degrees around the observer in response to the user's head movements or the user's line of sight or operations, allowing the user to experience a high level of immersion and realism.

[0004] The display device provided in the HMD is configured to be magnified and viewed via optical components, etc. In this case, there is a risk that the inclusion of optical components will increase the size of the housing, or that the user will be more likely to see the pixels and perceive them as grainy, so there is a demand for high-definition and / or miniaturization of the display device. For example, Patent Document 1 discloses an HMD with fine pixels achieved by using transistors capable of high-speed operation.

[0005] Japanese Patent Application Laid-Open No. 2000-2856

[0006] Since an HMD is worn on a user's head, it is required to be lightweight. One of the challenges is to realize an HMD that is lightweight, has a wide range of adjustability, and can be worn smoothly on a user's head.

[0007] Furthermore, if the main power supply of an HMD is cut off while the HMD is worn on the user's head and both eyes are covered, the user may lose balance and fall over due to the sudden darkness in front of the user's eyes. Another objective of the present invention is to provide an HMD that can display images even when the power supply from the main power supply is reduced or cut off.

[0008] A flexible secondary battery is used as one of the power sources for the head-mounted device and is placed close to the back of the head. Because it is flexible, it can be bent to fit the shape of the back of the user's head, making it possible to realize an HMD that can be worn smoothly on the user's head.

[0009] Furthermore, the secondary battery is not limited to a freely bendable battery, and a secondary battery that is fixed in a curved shape that conforms to the shape of the back of the user's head can be used.

[0010] From a fail-safe perspective, the head-mounted device uses multiple power sources and controls each of them. Specifically, multiple secondary batteries are used, and if the capacity of the main secondary battery drops or becomes abnormal, the use of that secondary battery is stopped and the other secondary batteries are used to continue operating the head-mounted device.

[0011] The configuration of the invention disclosed in this specification is an electronic device having a housing, a first display device, a second display device, a display control circuit that controls image display on the first display device and the second display device, a speaker, an imaging device that captures images of the external environment, an adjustment unit for adjusting the positions of the first display device and the second display device, and a flexible secondary battery, wherein the flexible secondary battery is provided in a band portion that is fixed to the speaker and housing, and the first display device, the second display device, the display control circuit, and the imaging device are fixed to the housing.

[0012] Another invention is an electronic device having a housing to be worn on a user's head, a first display device having a display surface for the user's left eye, a second display device having a display surface for the user's right eye, a display control circuit that controls image display on the first display device and the second display device, a speaker on the side of the user's head, an imaging device that captures images of the external environment in front of the user, an adjustment unit for adjusting the relative positions of the user's eyes and the first display device and the second display device, and a flexible secondary battery on the back of the user's head.

[0013] In each of the above configurations, the electronic device has a second secondary battery that is larger than the flexible secondary battery, and when power supply from the second secondary battery is stopped, power supply is switched to the flexible secondary battery, and the external environment captured by the imaging device is displayed.

[0014] In each of the above configurations, the second secondary battery is flexible.

[0015] In each of the above configurations, the first display device or the second display device includes a semiconductor substrate, a transistor having a metal oxide formed on the semiconductor substrate in a channel, and an organic light-emitting element on the transistor.

[0016] The housing is also adjustable using an adjustment unit for adjusting the relative positions of the user's eyes and the first and second display devices so that the housing can be worn while wearing eyeglasses.

[0017] The present invention makes it possible to realize an HMD that is lightweight, has a wide range of adjustability, and can be worn smoothly on the user's head.

[0018] It is also possible to provide an HMD that can display even if the amount of power supplied from the main power supply of the HMD drops or is stopped.

[0019] FIG. 1A is an example of a schematic external view illustrating one embodiment of the present invention, and FIG. 1B is an example of a schematic external view illustrating a state in which a part of the display device is slid and deformed. FIG. 2A is a back view illustrating one embodiment of the present invention, FIG. 2B is a top view thereof, and FIG. 2C is a front view thereof. FIG. 3 is an example of a block diagram illustrating one embodiment of the present invention. FIG. 4A is an example of a circuit diagram of a current sense circuit 35, and FIG. 4B is an example of a circuit diagram of a voltage sense circuit 36. FIG. 5 is a diagram illustrating a secondary battery. FIGS. 6A and 6B are diagrams illustrating cross sections of a secondary battery. FIGS. 7A and 7B are diagrams illustrating a method for manufacturing a secondary battery. FIGS. 8A and 8B are diagrams illustrating a method for manufacturing a secondary battery. FIGS. 9A and 9B are diagrams illustrating cross sections of a secondary battery. FIGS. 10A and 10B are perspective views illustrating an example of a display device. FIG. 11 is a cross-sectional view illustrating an example of a display device. FIG. 12 is a cross-sectional view illustrating an example of a display device. FIGS. 13A to 13C are diagrams illustrating configuration examples of display devices. FIG. 14A is a rear view illustrating one embodiment of the present invention, and FIGS. 14B to 14D are schematic diagrams illustrating configuration examples of a secondary battery.

[0020] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various modifications can be made to the embodiments and details. Furthermore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

[0021] (Embodiment 1) This embodiment includes a head-mounted device (HMD), a driving method, and a system. The head-mounted device includes a first display device having a display surface for at least the left eye of a user, a second display device having a display surface for the right eye of the user, an optical system (including lenses, films, and mirrors) disposed between one of the user's eyes and the display devices, an integrated circuit that processes images for the display devices, physical buttons for operation or adjustment, and a housing for head mounting.

[0022] The head-worn device may also include an interface object (e.g., a glove, a controller, an internet connection device, a wireless communication device, or a peripheral device) or an external battery.

[0023] 1A shows a schematic view of the appearance of a head-mounted device, electronic device 440. Electronic device 440 can be worn on the user's head.

[0024] The electronic device 440 can be used as an electronic device for XR (Cross Reality), such as AR (Augmented Reality), VR (Virtual Reality), MR (Mixed Reality), etc. A user wearing the electronic device 440 can view a three-dimensional image using parallax, with different images on the left and right.

[0025] The electronic device 440 has a housing, which includes a cover 415, a frame 442, and a band 443. The frame 442 and the band 443 are composed of multiple members and function to secure the cover 415 to the head. The band 443 has a shape that fits the back of the head 400. It is also preferable to provide a buffer material (cushion material, sponge, cloth, etc.) in the portion of the band 443 that comes into contact with the back of the head 400. A flexible secondary battery 500 can also be provided inside the band 443.

[0026] By using a flexible secondary battery 500, it can be shaped to fit the shape of the user's back of the head 400, thereby improving the fit to the user and improving comfort when worn.

[0027] 1B, the position of the cover unit 415 of the electronic device 440 can be adjusted by sliding and changing the position of the frame unit 442. The frame unit 442 is provided with a position adjustment dial 445 that can adjust the length of the frame unit 442, and the distance between the eyes and the display device can be adjusted to accommodate various head shapes of users.

[0028] 1B , when the frame portion 442 is slid, the image display on the display device is stopped and the speaker placed close to the ear can be used as headphones. The user can switch from the display to headphones by sliding the frame portion 442. The frame portion 442 can also be slid with one hand, which is useful when holding a controller or remote control in the other hand.

[0029] The mechanism for sliding the frame portion 442 to change its position also improves comfort when worn. Even though head-worn devices are lightweight, they weigh more than 100 g, which can easily place a strain on the neck. Therefore, wearing the head-worn device while lying face up on a bed or other surface can reduce neck strain. Furthermore, the flexible secondary battery 500 is located inside the band portion 443 and can be freely deformed, so even if the secondary battery 500 is located between the bed or pillow and the head, discomfort is reduced, improving comfort when worn. Furthermore, by sliding the frame portion 442 while lying face up, the external environment can be checked, and it becomes easier to move from the bed while wearing the electronic device 440.

[0030] In this embodiment, an example is shown in which a stretchable material, such as a rubber material or a fiber material, is used for the band portion 443, a flexible secondary battery 500 is provided inside, the band portion 443 fits the back of the head 400, and the cover portion 415 is fixed to the head, but this is not particularly limited to this. The band portion 443 can also be made of a plastic material, and can be a cassette type that can be removed and replaced from the band portion, and a secondary battery 500 having a curved shape is provided inside the cassette type member.

[0031] The electronic device 440 can be provided with a battery (external battery) outside the cover portion 415 and the frame portion 442. A primary battery or a secondary battery can be used as the external battery. For example, the cover portion 415 or the frame portion 442 can be connected to the battery with a power cable.

[0032] Furthermore, if a power plug is provided inside an electric vehicle equipped with a secondary battery, the electronic device 440 can be operated by connecting the power plug with a power cable. Furthermore, the electronic device 440 can be mounted on the electric vehicle and the driver can drive the electric vehicle, and in an emergency, the driver can hold the handlebars with one hand and slide the frame portion 442 with the other hand to ensure visibility.

[0033] It is preferable that the electronic device 440 has a battery located either inside the cover portion 415, inside the frame portion 442, or outside the cover portion 415 and the frame portion 442, and the battery can be located in multiple locations rather than just one of the locations listed above.

[0034] The electronic device 440 also has a speaker 444. The speaker 444 is a sound output device, and the portion that comes into contact with the ear has a cushioning material such as sponge, rubber, or cloth. The speaker 444 can also be called a headphone. Furthermore, the device is not limited to the speaker 444, and earphones or a bone conduction device can also be used.

[0035] 2A is a rear view of an electronic device 440 illustrating one embodiment of the present invention, FIG. 2B is a top view of the electronic device 440, and FIG. 2C is a front view of the electronic device 440. FIG.

[0036] 2A , the band portion 443 contains a flexible secondary battery 500 and a monitoring circuit 450. The monitoring circuit 450 may be a monitoring circuit for detecting an abnormality in the flexible secondary battery 500, or a monitoring circuit for charging the flexible secondary battery 500, and may be a monitoring circuit for an electronic device included in the electronic device 440, not limited to the flexible secondary battery 500. The monitoring circuit 450 may be an IC chip with a relatively small area.

[0037] 2B also illustrates a connection portion 446 between the frame portion 442 and the band portion 443 around a speaker 444 that is held close to one ear of the user, and the connection portion 446 has a mechanism for sliding the frame portion 442 and a mechanism for adjusting the length of the frame portion 442. Also, although an example is shown in which the position adjustment dial 445 is provided on the frame portion 442, it may be provided on the band portion 443.

[0038] The cover 415 also has a cushioning material such as sponge, rubber, cloth, etc. at the portion that comes into contact with the head. It is also preferable that the band 443 also has a cushioning material such as sponge, rubber, cloth, etc. at the portion that comes into contact with the head.

[0039] As shown in FIG. 2C , cameras 441R and 441L are provided on the surface of the cover portion 415. By displaying images captured by the cameras 441R and 441L in real time, the user can grasp the external situation even while wearing the electronic device 440. Image data of the real environment can be created based on the data captured by the cameras and displayed on the display surface. In addition, a video see-through function can be realized. By using two or more cameras, a three-dimensional image can be created using parallax.

[0040] A lens 412R functioning as an eyepiece for the right eye and a lens 412L functioning as an eyepiece for the left eye are provided in the portion located in front of the user's eyes on the user side of the cover unit 415. Also provided inside the cover unit 415 are a display device 411R for displaying an image for the right eye and a display device 411L for displaying an image for the left eye.

[0041] To enable the user to clearly see the display devices 411R and 411L, an adjustment unit for adjusting the relative positions of the user's eyes and the display devices 411R and 411L is important, and in this embodiment, a position adjustment dial 445 is provided. Instead of providing the position adjustment dial 445, a mechanism for adjusting the size of the head circumference of the electronic device 440 by adjusting the length of a wire with a small electric motor may also be provided. Furthermore, a configuration may be adopted in which an adjustment unit for adjusting the relative positions or a small electric motor is operated by a wireless signal using a remote control.

[0042] Furthermore, an imaging circuit may be built into the display device 411R and the display device 411L. The display device 411R and the display device 411L may be provided with an imaging circuit to provide the electronic device 440 with a function of monitoring the state of the user's eyes or a function of monitoring the user's viewpoint. The display device 411R provided with an imaging circuit may also be called an imaging device.

[0043] The cover 415 may also include a wireless communication module, a storage module, and the like. The wireless communication module performs wireless communication, and the content to be viewed can be downloaded and stored in the storage module. This allows the user to view the downloaded content offline whenever they like.

[0044] Furthermore, the electronic device 440 may be provided with an imaging means or imaging device such as an infrared camera, a LiDAR (Light Detection and Ranging) sensor, etc., in addition to the camera 441R and the camera 441L.

[0045] It is also possible to store many devices inside the cover portion 415, but in that case the weight of the cover portion 415 increases. In this embodiment, the secondary battery 500 is provided inside the band portion 443, so the weight of the secondary battery 500 can be used as a counterweight for the cover portion 415. Therefore, as shown in this embodiment, it is preferable to provide the secondary battery 500 in a position that can be used as a counterweight for the cover portion 415, that is, in a position close to the back of the head 400.

[0046] An input terminal and an output terminal may be provided on the surface of the electronic device 440. A cable for supplying a video signal from a video output device or the like, or power for charging the secondary battery 500, can be connected to the input terminal.

[0047] FIG. 3 shows an example of a block diagram of the electronic device 440 .

[0048] The display devices 411R and 411L of the electronic device 440 are connected to a control circuit 18, which performs image processing, specifically outputting or correcting display image data. The control circuit 18 is built into the cover. This embodiment is an example in which multiple power sources are used, and includes a second secondary battery 30 in addition to a secondary battery 500, which is a first battery. The second secondary battery 30 has a larger capacity than the secondary battery 500. Power output from the second secondary battery 30 is supplied to a monitoring circuit 450 via a first DCDC circuit 31. The monitoring circuit 450 monitors the power supplied to the control circuit 18 using a current sense circuit 35 and a voltage sense circuit 36.

[0049] 4A shows a specific example of the current sense circuit 35. The current sense circuit 35 includes a resistor element 37 and an operational amplifier 38 electrically connected to both ends of the resistor element 37. The output value of the operational amplifier 38 is voltage data, and this data is output to the control circuit 18. For example, if the voltage data is too high, the transistor is controlled to lower the voltage, and if the voltage data is too low, the transistor is controlled to raise the voltage. Depending on the current sense circuit 35, it may also be possible to output current data to the control circuit 18.

[0050] 4B shows a specific example of the voltage sense circuit 36. The voltage sense circuit 36 ​​has resistive elements 39a and 39b. Voltage data obtained by resistive division is output to the control circuit 18. For example, if the voltage data is too high, the transistor is controlled to lower the voltage, and if the voltage data is too low, the transistor is controlled to raise the voltage. Depending on the voltage sense circuit 36, it may also be possible to output current data to the control circuit 18.

[0051] 3, the power supply to the control circuit 18 is shown using a black arrow as a power path from the second secondary battery 30. The charging path from the second secondary battery 30 to the secondary battery 500 is also shown using a black arrow.

[0052] In addition, various signals are input / output to / from the control circuit 18 or the monitoring circuit 450 to control the on / off of the second DCDC circuit 32 or the on / off of the charging circuit 33. The control circuit 18 or the monitoring circuit 450 has a memory circuit, and the memory circuit stores an operation program for the head-mounted device.

[0053] The flow of normal operation (normal mode) is shown below.

[0054] In the normal mode, power is supplied from the second secondary battery 30 to the control circuit 18, and the user can view images using the display devices 411R and 411L. Note that the second DCDC circuit 32 is in an off state, and power supply from the secondary battery 500 is also stopped.

[0055] The flow of operations in an emergency (emergency mode) is shown below.

[0056] When the power required to display the display devices 411R and 411L becomes insufficient, or when a sudden change in power occurs, the monitoring circuit 450 can detect this using the voltage sense circuit 36 ​​and the current sense circuit 35. When the monitoring circuit 450 detects a sudden change in power, the monitoring circuit 450 turns on the second DCDC circuit 32 and supplies power from the secondary battery 500 to the control circuit 18. At this time, an image informing the user that the device is in emergency mode is displayed on the display devices 411R and 411L. In this way, the secondary battery 500 and the second DCDC circuit 32 can supplement the power supply.

[0057] Furthermore, when the monitoring circuit 450 detects that the normal state has been restored, the monitoring circuit 450 turns off the second DCDC circuit 32 and stops the power supply from the secondary battery 500. Furthermore, the capacity of the secondary battery 500 that has decreased due to temporary use is automatically charged using the charging circuit 33.

[0058] By using the emergency mode, data can be continuously saved on the auxiliary battery to prevent the loss of game data, environment setting data, etc. when the capacity of the second secondary battery 30, which is the main power source, drops or when the power supply from the second secondary battery 30 is cut off. Even if the external connection cord becomes unplugged for some reason, the device can be driven for a short time using the power stored in the secondary battery 500, which is the auxiliary battery, and data can be saved or the device can be shut down.

[0059] Furthermore, even in the case of electronic device 440 that uses a power cable instead of second secondary battery 30, the operation program of the head-worn device can be safely terminated using the power stored in secondary battery 500, which serves as an auxiliary battery, even in the event of a power outage or the power cable being disconnected. If the power supply is interrupted while electronic device 440 is operating, data stored in the memory circuit in control circuit 18 or monitoring circuit 450 may be corrupted, and the operation program may not operate normally. Therefore, when the main power source is lost, secondary battery 500, which serves as a temporary power supply source, can contribute to preventing breakdowns in electronic device 440.

[0060] Furthermore, in this embodiment, an example has been shown in which the second secondary battery 30 is used as an external battery, but this is not particularly limited, and the second secondary battery 30 can also be built into the electronic device 440 .

[0061] If the HMD is powered by an external battery or external connection, the connection cord is always connected, and if the user moves their head or both hands significantly, the connection cord, which is not in the displayed field of view, may come into contact with the body. If the second secondary battery 30 is built into the electronic device 440, a natural operating environment can be provided while the user is wearing the HMD on their head.

[0062] Furthermore, when the second secondary battery 30 is built into the electronic device 440, a flexible secondary battery can be used as the second secondary battery 30. Furthermore, a flexible secondary battery can be used as the second secondary battery 30 and can be built into the band portion in the same way as the secondary battery 500.

[0063] This embodiment mode can be freely combined with other embodiment modes.

[0064] Embodiment 2 This embodiment shows an example of a secondary battery 500. Fig. 5 shows a thin laminated secondary battery having a flexible structure, and when the secondary battery is mounted in an electronic device having at least a flexible portion, the secondary battery can be bent in accordance with the deformation of the electronic device.

[0065] Fig. 5 shows an external view of a thin secondary battery 500. Figs. 6A and 6B show the A1-A2 and B1-B2 cross sections indicated by the dashed dotted lines in Fig. 5 . The secondary battery 500 includes a positive electrode 503 having a positive electrode current collector 501 and a positive electrode active material layer 502, a negative electrode 506 having a negative electrode current collector 504 and a negative electrode active material layer 505, a separator 507, an electrolyte 508, and an exterior body 509. The separator 507 is disposed between the positive electrode 503 and the negative electrode 506, both of which are provided within the exterior body 509. The interior of the exterior body 509 is filled with the electrolyte 508.

[0066] 5, the exterior body 509 preferably has a region 509a and a region 509b. In the example shown in FIG. 5, the region 509b functions as a sealing region of the exterior body 509. The region 509b seals three sides on the top surface of the exterior body 509. The exterior body 509 can be sealed using, for example, heat.

[0067] The exterior body 509 is preferably made of a material with low impurity permeability. In particular, it is preferably made of a material with low moisture permeability. For example, it is preferably made of metal. It is preferable to use a film (sometimes called a sheet or foil) as the exterior body.

[0068] The exterior body 509 preferably contains at least one metal selected from aluminum, copper, tin, niobium, titanium, nickel, manganese, iron, molybdenum, tungsten, tantalum, chromium, and the like. It may also contain an alloy of these metals. For example, it may contain stainless steel. It is also preferable that the exterior body has a metal layer containing these metals or alloys. Aluminum, copper, tin, niobium, titanium, and the like have a small Young's modulus and may be easy to process. Furthermore, aluminum is inexpensive and easy to process, making it a particularly preferable metal for the exterior body.

[0069] Here, the thickness of the metal layer is, for example, 5 μm or more and 200 μm or less, or 10 μm or more and 100 μm or less, or 15 μm or more and 50 μm or less.

[0070] Alternatively, the exterior body 509 may have a carbon sheet. Examples of the carbon sheet include a film containing graphite, carbon fiber, activated carbon, graphene, a graphene compound, or the like.

[0071] The exterior body 509 preferably includes a resin. The resin may be in the form of a film. Examples of the resin that can be used include polyethylene, polypropylene, polycarbonate, ionomer, and polyamide.

[0072] Furthermore, to prevent short-circuiting between the electrodes of the secondary battery 500 and the exterior body, it is preferable that the surface of the exterior body has low electrical conductivity. Therefore, it is preferable that the exterior body has a resin layer or the like on the surface. For example, a film having a resin layer on both sides of a metal layer can be used as the exterior body.

[0073] For example, the exterior body 509 may have a resin layer on at least one of the front and rear surfaces of a first film containing a metal or alloy.

[0074] For example, the outer casing 509 may be a single-layer film selected from the group consisting of metal films (aluminum, stainless steel, copper, etc.), plastic films made of organic materials, hybrid material films containing organic materials (organic resins or fibers, etc.) and inorganic materials (ceramics, etc.), and carbon-containing inorganic films (carbon films, graphite films, etc.), or a laminated film made of multiple of these.

[0075] Furthermore, when a metal film is used, in order to insulate the surface, the inner surface is coated with a material such as polypropylene, polyethylene, polycarbonate, ionomer, or polyamide, and the outer surface is provided with an insulating synthetic resin film such as a polyamide-based resin or polyester-based resin, resulting in a three-layer film. Alternatively, polyethylene terephthalate (PET) resin or the like may be used as the resin layer. The metal film may also be coated with a laminated film of two or more layers. For example, the inner surface may be coated with a material such as polypropylene, and the outer surface may be coated with a film laminated with a polyamide-based resin and polyethylene terephthalate (PET). Here, for example, the thickness of the resin layer is 10 μm or more and 200 μm or less, or 15 μm or more and 100 μm or less.

[0076] When the secondary battery 500 is bent, the exterior body 509 is deformed. Deformation of the exterior body 509 may cause phenomena such as cracks in parts of the exterior body or parts of the exterior body being stretched and thinned. Such phenomena increase the permeability of the exterior body to impurities. Therefore, impurities in the atmosphere, such as moisture, are more likely to enter the interior of the exterior body.

[0077] The exterior body 509 of the secondary battery 500 can suppress an increase in impurity permeability when the secondary battery is repeatedly bent.

[0078] Here, repeated bending refers to, for example, repeatedly bending the battery between states with a large radius of curvature and states with a small radius of curvature. When bending a secondary battery, the smaller the radius of curvature, the greater the deformation of the exterior body, making it more likely to crack.

[0079] When the secondary battery 500 is bent, deformation may become large in a localized area of ​​the exterior body 509. For example, localized deflection may occur in the exterior body. The localized deflection may cause wrinkles. Wrinkles can also be thought of as areas with an extremely small radius of curvature. As the secondary battery 500 is repeatedly bent, cracks may be more likely to occur in the wrinkled areas.

[0080] Therefore, it is preferable that the exterior body of the secondary battery 500 is resistant to bending.

[0081] In order to suppress the bending of the film, for example, the thickness of the film is increased.

[0082] Alternatively, the sagging can be suppressed by processing the film. For example, protrusions can be formed on the film. Examples of providing protrusions on the film include embossing the film and forming the film into a bellows shape.

[0083] Metal films are easy to emboss. Furthermore, forming protrusions by embossing increases the surface area of ​​the exterior body 509 exposed to the outside air, for example, the ratio of the surface area to the area seen from the top, resulting in excellent heat dissipation. The protrusions formed on the front (or back) surface of the film by embossing form a closed space with a variable volume, with the film serving as part of the wall of the sealing structure. This closed space can also be said to be formed by the protrusions of the film forming a bellows structure. Furthermore, methods that can form reliefs in parts of the film are not limited to embossing, which is a type of press processing, but can also be used.

[0084] The sealing structure of the secondary battery 500 is either a structure in which one rectangular film is folded in the middle and the two ends are overlapped, and the three sides are fixed with an adhesive layer to seal it, or a structure in which two films are overlapped, and the four sides, which are the end faces of the films, are fixed with an adhesive layer to seal it.

[0085] Although the secondary battery 500 in FIG. 5 is shown as having a rectangular shape, this is not particularly limited. For example, if the short sides of the rectangular shape are shortened, the secondary battery can have an elongated external shape.

[0086] The adhesive layer can be made of a thermoplastic film material, a heat-curing adhesive, an anaerobic adhesive, a light-curing adhesive such as an ultraviolet-curing adhesive, or a reaction-curing adhesive. The adhesive material can be an epoxy resin, an acrylic resin, a silicone resin, or a phenolic resin.

[0087] The solvent for the electrolytic solution 508 is preferably an aprotic organic solvent, and for example, one of ethylene carbonate (EC), propylene carbonate (PC), butylene carbonate, chloroethylene carbonate, vinylene carbonate, γ-butyrolactone, γ-valerolactone, dimethyl carbonate (DMC), diethyl carbonate (DEC), ethyl methyl carbonate (EMC), methyl formate, methyl acetate, methyl butyrate, 1,3-dioxane, 1,4-dioxane, dimethoxyethane (DME), dimethyl sulfoxide, diethyl ether, methyl diglyme, acetonitrile, benzonitrile, tetrahydrofuran, sulfolane, sultone, etc., or two or more of these can be used in any combination and ratio.

[0088] Furthermore, using a gelling polymer material as a solvent for the electrolyte improves safety against leakage and other issues. It also enables the secondary battery to be made thinner and lighter. Representative examples of gelling polymer materials include silicone gel, acrylic gel, acrylonitrile gel, polyethylene oxide gel, polypropylene oxide gel, and fluorine-based polymer gel.

[0089] Furthermore, by using one or more flame-retardant and non-volatile ionic liquids (room-temperature molten salts) as the solvent for the electrolyte, it is possible to prevent the secondary battery from exploding even if the internal temperature rises due to an internal short circuit, overcharging, or the like of the secondary battery. The ionic liquid is composed of a cation and an anion, and includes an organic cation and an anion. Examples of organic cations used in the electrolyte include aliphatic onium cations such as quaternary ammonium cations, tertiary sulfonium cations, and quaternary phosphonium cations, and aromatic cations such as imidazolium cations and pyridinium cations. Examples of anions used in the electrolyte include monovalent amide anions, monovalent methide anions, fluorosulfonate anions, perfluoroalkylsulfonate anions, tetrafluoroborate anions, perfluoroalkylborate anions, hexafluorophosphate anions, and perfluoroalkylphosphate anions.

[0090] When lithium ions are used as a carrier, the electrolyte to be dissolved in the solvent is, for example, LiPF ６ , LiClO ４ , LiAsF ６ , LiBF ４ , LiAlCl ４ , LiSCN, LiBr, LiI, Li ２ SO ４ , Li ２ B １０ Cl １０ , Li ２ B １２ Cl １２ , LiCF ３ SO ３ , LiC ４ F ９ SO ３ , LiC(CF ３ SO ２ ) ３ , LiC(C ２ F ５ SO ２ ) ３ , LiN(CF ３ SO ２ ) ２ , LiN(C ４ F ９ SO ２ ) (CF３ SO ２ ), LiN(C ２ F ５ SO ２ ) ２ These lithium salts may be used alone or in any combination and ratio of two or more thereof.

[0091] Furthermore, it is preferable to use a highly purified electrolyte solution for the secondary battery, which contains little granular dust or elements other than the constituent elements of the electrolyte solution (hereinafter simply referred to as "impurities"). Specifically, it is preferable to set the weight ratio of impurities to the electrolyte solution to 1% or less, preferably 0.1% or less, and more preferably 0.01% or less.

[0092] In addition, additives such as vinylene carbonate, propane sultone (PS), tert-butylbenzene (TBB), fluoroethylene carbonate (FEC), and lithium bis(oxalate)borate (LiBOB) can be added to the electrolyte solution. The concentration of the additive is, for example, 0.1 weight % or more and 5 weight % or less with respect to the total solvent.

[0093] Alternatively, a polymer gel electrolyte may be used in which a polymer is swollen with an electrolytic solution.

[0094] Examples of polymers that can be used include polymers having a polyalkylene oxide structure, such as polyethylene oxide (PEO), PVDF, polyacrylonitrile, and copolymers containing these. For example, PVDF-HFP, a copolymer of PVDF and hexafluoropropylene (HFP), can be used. The polymer formed may also have a porous shape.

[0095] In addition, instead of an electrolytic solution, a solid electrolyte containing an inorganic material such as a sulfide or oxide, or a polymer material such as a polyethylene oxide (PEO) can be used. When a solid electrolyte is used, the installation of a separator or spacer is unnecessary. Furthermore, since the entire battery can be solidified, the risk of leakage is eliminated, dramatically improving safety.

[0096] The separator 507 may be made of, for example, paper, nonwoven fabric, glass fiber, ceramics, or synthetic fibers such as nylon (polyamide), vinylon (polyvinyl alcohol fiber), polyester, acrylic, polyolefin, or polyurethane.

[0097] The separator 507 is preferably processed into a bag shape and disposed so as to encase either the positive electrode 503 or the negative electrode 506. For example, as shown in Fig. 7A , the separator 507 is folded in half so as to sandwich the positive electrode 503 therebetween, and the separator 507 is sealed with a sealing portion 514 outside the region overlapping with the positive electrode 503, thereby enabling the positive electrode 503 to be reliably supported within the separator 507. Then, as shown in Fig. 7B , the positive electrodes 503 and negative electrodes 506 wrapped in the separator 507 are alternately stacked, and these are disposed within an exterior body 509, thereby forming a thin secondary battery 500.

[0098] The positive electrode 503 and the negative electrode 506 may be made of known materials.

[0099] FIG. 8 shows an example of welding a current collector to a lead electrode. As shown in FIG. 8A , positive electrodes 503 and negative electrodes 506, each wrapped in a separator 507, are alternately stacked. Next, a positive current collector 501 is welded to a positive lead electrode 510, and a negative current collector 504 is welded to a negative lead electrode 511. FIG. 8B shows an example of welding the positive current collector 501 to the positive lead electrode 510. The positive current collector 501 is welded to the positive lead electrode 510 in a welding region 512 using ultrasonic welding or the like. Furthermore, the positive current collector 501 has a curved portion 513 shown in FIG. 8B , which can alleviate stress caused by external force applied after the secondary battery 500 is fabricated, thereby improving the reliability of the secondary battery 500. Here, the region of the positive or negative current collector to which welding is performed is sometimes referred to as a tab region.

[0100] 5 and 6 , a positive electrode lead electrode 510 and a negative electrode lead electrode 511 are ultrasonically welded to a positive electrode current collector 501 or a negative electrode current collector 504, so that the positive electrode lead electrode 510 and the negative electrode lead electrode 511 are exposed to the outside. The positive electrode current collector 501 and the negative electrode current collector 504 can also serve as terminals for establishing electrical contact with the outside. In this case, the positive electrode current collector 501 and the negative electrode current collector 504 may be arranged so that a portion of the positive electrode current collector 501 and the negative electrode current collector 504 is exposed to the outside from an exterior body 509 without using a lead electrode.

[0101] Although the positive electrode lead electrode 510 and the negative electrode lead electrode 511 are arranged on the same side in FIG. 5 , the positive electrode lead electrode 510 and the negative electrode lead electrode 511 may be arranged on different sides. As described above, the secondary battery of one embodiment of the present invention allows the lead electrodes to be arranged freely, thereby providing a high degree of design freedom. Therefore, the design freedom of a product using the secondary battery of one embodiment of the present invention can be increased. Furthermore, the productivity of a product using the secondary battery of one embodiment of the present invention can be increased.

[0102] 6 shows an example in which the number of pairs of opposing positive and negative electrode active material layers is five, but the number of pairs of active material layers is not limited to five and may be more or less. When the number of active material layers is large, a secondary battery with a larger capacity can be obtained. Furthermore, when the number of active material layers is small, a secondary battery with a thinner structure and excellent flexibility can be obtained.

[0103] In the above configuration, the exterior body 509 of the secondary battery can be deformed so that the minimum radius of curvature is, for example, 3 mm or more and 30 mm or less, more preferably 3 mm or more and 10 mm or less. The film that is the exterior body of the secondary battery is composed of one or two sheets, and in the case of a secondary battery with a laminated structure, the cross-sectional structure of the curved secondary battery is a structure sandwiched between two curves of the film that is the exterior body.

[0104] 9A and 9B show the state of the exterior body 509 in an example of bending the secondary battery 500. Fig. 9A shows an example of the secondary battery 500 in a substantially flat state. Fig. 9B shows an example of bending the secondary battery 500. In the example shown in Fig. 9B, the regions 500a and 500d are more curved than the region 500c, i.e., have a smaller radius of curvature, and the region 509a is deformed more than the region 509c.

[0105] The modulus of rigidity of region 509a is smaller than that of region 509c, and therefore region 509a is more likely to stretch. The greater stretchability of region 509c, which deforms more significantly, reduces distortion of exterior body 509 of secondary battery 500, local concentration of force on exterior body 509, and relaxation of force. This makes it possible to suppress cracks in exterior body 509 of secondary battery 500.

[0106] Furthermore, by making the maximum thickness of region 509a thinner than that of region 509c, it is possible to reduce the volume occupied by secondary battery 500 when secondary battery 500 is mounted in an electronic device, etc. Furthermore, it is possible to reduce dead space inside the electronic device, etc.

[0107] 5, region 509b is preferably flatter than region 509a. Region 509b preferably has a smaller surface area to top surface area ratio R than region 509a. Region 509b preferably has a smaller difference between the maximum height and the minimum height of the film surface than region 509a.

[0108] This embodiment mode can be freely combined with other embodiment modes.

[0109] Embodiment 3 In this embodiment, a display module 170 that can be used for the display device 411R and the display device 411L described in Embodiment 1 will be described below. Examples of the display module include a module in which a connector such as a flexible printed circuit (hereinafter, referred to as FPC) or a TCP (Tape Carrier Package) is attached to the display device, and a module in which an integrated circuit (IC) is mounted by a COG (Chip On Glass) method, a COF (Chip On Film) method, or the like.

[0110] The display device of one embodiment of the present invention can have high resolution and can therefore be suitably used in electronic devices having a relatively small display area, such as head-mounted displays and other VR devices, glasses-type AR devices, and wearable devices that can be worn on the head, such as MR devices.

[0111] The display device of one embodiment of the present invention preferably has extremely high resolution, such as HD (1280 × 720 pixels), FHD (1920 × 1080 pixels), WQHD (2560 × 1440 pixels), WQXGA (2560 × 1600 pixels), 4K (3840 × 2160 pixels), or 8K (7680 × 4320 pixels). A resolution of 4K, 8K, or higher is particularly preferable. Furthermore, the pixel density (resolution) of the display device of one embodiment of the present invention is preferably 100 ppi or more, 300 ppi or more, 500 ppi or more, 1000 ppi or more, 2000 ppi or more, 3000 ppi or more, 5000 ppi or more, or 7000 ppi or more. By using a display device having such high resolution and / or high resolution, it is possible to further enhance the sense of realism and depth. The display device of one embodiment of the present invention is not particularly limited in terms of the screen ratio (aspect ratio). For example, the display device can accommodate various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0112] 10A shows a perspective view of the display module 170. The display module 170 includes a display device 600A and an FPC 298. Note that the display device included in the display module 170 is not limited to the display device 600A, and may be a display device 600B described later.

[0113] The display module 170 includes a substrate 291 and a substrate 299. The display module 170 includes a display portion 297. The display portion 297 is a region that displays an image in the display module 170, and is a region where light from each pixel provided in a pixel portion 294 (described later) can be viewed.

[0114] 10B is a perspective view schematically illustrating the configuration on the substrate 291 side. A circuit portion 292, a pixel circuit portion 293 on the circuit portion 292, and a pixel portion 294 on the pixel circuit portion 293 are stacked on the substrate 291. A terminal portion 295 for connecting to an FPC 298 is provided in a portion of the substrate 291 that does not overlap with the pixel portion 294. The terminal portion 295 and the circuit portion 292 are connected by a wiring portion 296 composed of a plurality of wirings.

[0115] The semiconductor device of one embodiment of the present invention can be applied to one or both of the circuit portion 292 and the pixel circuit portion 293 .

[0116] The pixel section 294 has a plurality of periodically arranged pixels 294a. An enlarged view of one pixel 294a is shown on the right side of Fig. 10B. Fig. 10B shows an example in which one pixel 294a has a sub-pixel 130R that emits red light, a sub-pixel 130G that emits green light, and a sub-pixel 130B that emits blue light.

[0117] Each subpixel has a display element. Various elements can be used as the display element, including, for example, a liquid crystal element and a light-emitting element. Other examples include shutter-type or optical interference-type MEMS (Micro Electro Mechanical Systems) elements, display elements using microcapsules, electrophoresis, electrowetting, or electronic liquid powder (registered trademark) methods, etc. Furthermore, a QLED (Quantum-dot LED) using a light source and color conversion technology using quantum dot materials may also be used.

[0118] Examples of the light-emitting element include self-luminous light-emitting elements such as LEDs (Light Emitting Diodes), OLEDs (Organic LEDs), semiconductor lasers, etc. Examples of the LED that can be used include mini LEDs and micro LEDs.

[0119] The pixel arrangement in the display device of this embodiment is not particularly limited, and various methods can be applied. Examples of pixel arrangements include a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement. Figure 10B shows an example in which a stripe arrangement is applied to the pixel arrangement.

[0120] The pixel circuit section 293 has a plurality of pixel circuits 293a arranged periodically.

[0121] One pixel circuit 293a is a circuit that controls the driving of multiple elements included in one pixel 294a. One pixel circuit 293a can be configured to have three circuits that control the light emission of one light-emitting element. For example, the pixel circuit 293a can be configured to have at least one selection transistor, one current control transistor (drive transistor), and a capacitor for each light-emitting element. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to the source. This realizes an active matrix display device.

[0122] The circuit portion 292 includes a circuit for driving each pixel circuit 293a of the pixel circuit portion 293. For example, it is preferable that the circuit portion 292 includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 292 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0123] The FPC 298 functions as wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit portion 292. An IC may be mounted on the FPC 298.

[0124] The display module 170 can be configured such that one or both of the pixel circuit portion 293 and the circuit portion 292 are provided overlapping below the pixel portion 294, thereby making it possible to extremely increase the aperture ratio (effective display area ratio) of the display portion 297. In addition, the pixels 294a can be arranged at extremely high density, making it possible to extremely increase the resolution of the display portion 297.

[0125] Because of its extremely high resolution, the display module 170 can be suitably used in VR devices such as HMDs or eyeglass-type AR devices. For example, even in a configuration in which the display unit of the display module 170 is viewed through an optical system such as a lens, the display module 170 has an extremely high-resolution display unit 297, so that pixels are not visible even when the display unit is enlarged with a lens, allowing for a highly immersive display.

[0126] 11 shows a cross-sectional view of a display device 600A. The display device 600A is an example of a display device that employs an MML (metal maskless) structure. In other words, the display device 600A has light-emitting elements that are fabricated without using a fine metal mask.

[0127] The island-shaped light-emitting layers in the light-emitting elements of a display device employing the MML structure are formed by depositing a light-emitting layer on one surface and then processing it using photolithography. This allows for the realization of high-definition display devices or display devices with a high aperture ratio, which have been difficult to achieve until now. Furthermore, since the light-emitting layers can be created separately for each color, a display device with extremely vivid images, high contrast, and high display quality can be realized. For example, if a display device is composed of three types of light-emitting elements, namely, light-emitting elements that emit blue light, light-emitting elements that emit green light, and light-emitting elements that emit red light, the deposition of the light-emitting layers and the processing by photolithography can be repeated three times to form the three types of island-shaped light-emitting layers.

[0128] Because devices with an MML structure can be manufactured without using a metal mask, they can exceed the upper limit of resolution imposed by the alignment accuracy of the metal mask. Furthermore, when devices are manufactured without using a metal mask, the equipment required for manufacturing the metal mask and the metal mask cleaning process are unnecessary. Furthermore, since photolithography processing can be performed using the same or similar equipment as that used to manufacture transistors, there is no need to introduce special equipment to manufacture devices with an MML structure. As such, the MML structure allows for low manufacturing costs, making it suitable for mass production of devices.

[0129] In a display device to which the MML structure is applied, there is no need to artificially increase the resolution by applying a special pixel arrangement such as a pentile arrangement, and therefore it is possible to realize a display device with high resolution (for example, 500 ppi or more, 1000 ppi or more, 2000 ppi or more, 3000 ppi or more, or 5000 ppi or more) using a so-called stripe arrangement in which R, G, and B sub-pixels are each arranged in one direction.

[0130] Furthermore, by providing a sacrificial layer on the light-emitting layer, damage to the light-emitting layer during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting element can be improved. Note that the sacrificial layer may remain in the completed display device or may be removed during the manufacturing process. For example, the sacrificial layer 618a shown in FIGS. 11 and 12 is a part of the sacrificial layer provided on the light-emitting layer.

[0131] Furthermore, by employing a film formation step using an area mask and a processing step using a resist mask, a light-emitting element can be manufactured through a relatively simple process.

[0132] 11 is a cross-sectional schematic diagram of a display device (semiconductor device) of one embodiment of the present invention. The display device 600A has a structure in which a pixel circuit, a driver circuit, and the like are provided over a substrate 1410. Note that in the display device 600A in FIG. 11, a wiring layer 670 is also illustrated in addition to an element layer 620, an element layer 630, and an element layer 660. The wiring layer 670 is a layer in which wirings are provided.

[0133] A pixel circuit of the display device is preferably provided in the element layer 630. A driver circuit of the display device (either a gate driver or a source driver, or both) is preferably provided in the element layer 620. The element layer 620 may also be provided with one or more types of circuits such as an arithmetic circuit and a memory circuit.

[0134] The element layer 620 includes, for example, a substrate 1410 over which a transistor 1400d is formed. A wiring layer 670 is provided above the transistor 1400d. The wiring layer 670 includes a wiring that connects the transistor 1400d to a conductive layer or a transistor (the conductive layer 524 in FIG. 11 ) provided in the element layer 630. An element layer 630 and an element layer 660 are provided above the wiring layer 670. The element layer 630 includes, for example, a transistor MTCK. The element layer 660 includes a light-emitting element 650 (a light-emitting element 650R, a light-emitting element 650G, and a light-emitting element 650B in FIG. 11 ).

[0135] The transistor 1400d is an example of a transistor included in the element layer 620. The transistor MTCK is an example of a transistor included in the element layer 630. The light-emitting elements (light-emitting element 650R, light-emitting element 650G, and light-emitting element 650B) are an example of light-emitting elements included in the element layer 660.

[0136] The substrate 1410 can be, for example, a semiconductor substrate (e.g., a single-crystal substrate made of silicon or germanium). Other than a semiconductor substrate, the substrate 1410 can be, for example, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a sapphire glass substrate, a metal substrate, a stainless steel substrate, a substrate having stainless steel foil, a tungsten substrate, a substrate having tungsten foil, a flexible substrate, a lamination film, paper containing a fibrous material, or a base film. In this embodiment, the substrate 1410 will be described as a semiconductor substrate made of silicon. Therefore, the transistor included in the element layer 620 can be a Si transistor.

[0137] The transistor 1400d includes an element isolation layer 1412, a conductive layer 1416, an insulating layer 1415, an insulating layer 1417, a semiconductor region 1413 formed of a part of the substrate 1410, and low-resistance regions 1414a and 1414b functioning as source and drain regions. Therefore, the transistor 1400d is a Si transistor. Note that although FIG. 11 illustrates a structure in which one of the source and drain of the transistor 1400d is connected to the conductive layer 524 provided in the element layer 630 through the conductive layer 1428, the conductive layer 1430, and the conductive layer 1456, the connection structure of the display device of one embodiment of the present invention is not limited thereto.

[0138] The transistor 1400d can be a Fin type by, for example, covering the top surface and the side surfaces in the channel width direction of the semiconductor region 1413 with the conductive layer 1416 via the insulating layer 1415 that functions as a gate insulating layer. By making the transistor 1400d a Fin type, the effective channel width can be increased, and the on-state characteristics of the transistor 1400d can be improved. Furthermore, the contribution of the electric field of the gate electrode can be increased, and the off-state characteristics of the transistor 1400d can be improved. The transistor 1400d may be a planar type instead of a Fin type.

[0139] Note that the transistor 1400d can be either a p-channel or an n-channel transistor. Alternatively, a plurality of transistors 1400d can be provided and both p-channel and n-channel transistors can be used.

[0140] The region in the semiconductor region 1413 where the channel is formed, the region nearby, and the low-resistance region 1414a and the low-resistance region 1414b that become the source region or drain region preferably contain a silicon-based semiconductor, specifically, single-crystal silicon. Alternatively, each of the aforementioned regions may be formed using, for example, germanium, silicon germanium, gallium arsenide, aluminum gallium arsenide, or gallium nitride. A configuration using silicon in which the effective mass is controlled by applying stress to the crystal lattice and changing the lattice spacing may also be used. Alternatively, the transistor 1400d may be, for example, a high electron mobility transistor (HEMT) using gallium arsenide and aluminum gallium arsenide.

[0141] The conductive layer 1416 functioning as a gate electrode can be made of a semiconductor material such as silicon containing an element that imparts n-type conductivity, such as arsenic or phosphorus, or an element that imparts p-type conductivity, such as boron or aluminum. Alternatively, the conductive layer 1416 can be made of a conductive material such as a metal material, an alloy material, or a metal oxide material.

[0142] Since the work function is determined by the material of the conductive layer, the threshold voltage of the transistor can be adjusted by selecting the material of the conductive layer. Specifically, it is preferable to use one or both of titanium nitride and tantalum nitride for the conductive layer. Furthermore, in order to achieve both conductivity and embeddability, it is preferable to use one or both of tungsten and aluminum as a stacked layer for the conductive layer, and tungsten is particularly preferable in terms of heat resistance.

[0143] The element isolation layer 1412 is provided to isolate a plurality of transistors formed on the substrate 1410. The element isolation layer can be formed by, for example, a local oxidation of silicon (LOCOS) method, a shallow trench isolation (STI) method, or a mesa isolation method.

[0144] Over the transistor 1400d shown in FIG. 11, an insulating layer 1420 and an insulating layer 1422 are stacked in this order from the substrate 1410 side.

[0145] The insulating layer 1420 and the insulating layer 1422 can be formed using, for example, one or more selected from silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, aluminum oxynitride, aluminum nitride oxide, and aluminum nitride.

[0146] The insulating layer 1422 may function as a planarizing film that planarizes steps caused by the insulating layer 1420 and the transistor 1400d covered with the insulating layer 1422. For example, the top surface of the insulating layer 1422 may be planarized by planarization treatment using a CMP method or the like to improve the planarity.

[0147] A conductive layer 1428 connected to a transistor MTCK and the like provided above the insulating layer 1422 is buried in the insulating layer 1420 and the insulating layer 1422. Note that the conductive layer 1428 functions as a plug or a wiring.

[0148] In the display device 600A, a wiring layer 670 is provided over the transistor 1400d. The wiring layer 670 includes, for example, an insulating layer 1424, an insulating layer 1426, a conductive layer 1430, an insulating layer 1450, an insulating layer 1452, an insulating layer 1454, and a conductive layer 1456.

[0149] An insulating layer 1424 and an insulating layer 1426 are stacked in this order over the insulating layer 1422 and the conductive layer 1428. An opening is formed in the insulating layer 1424 and the insulating layer 1426 in a region overlapping with the conductive layer 1428. A conductive layer 1430 is embedded in the opening.

[0150] An insulating layer 1450, an insulating layer 1452, and an insulating layer 1454 are stacked in this order over the insulating layer 1426 and the conductive layer 1430. An opening is formed in the insulating layer 1450, the insulating layer 1452, and the insulating layer 1454 in a region overlapping with the conductive layer 1430. A conductive layer 1456 is embedded in the opening.

[0151] The conductive layer 1430 and the conductive layer 1456 function as a plug or a wiring connected to the transistor 1400d.

[0152] Note that, for example, the insulating layers 1424 and 1450 are preferably insulating layers having a barrier property against one or more selected from hydrogen, oxygen, and water, similar to the insulating layer 592 described later. Similarly to the insulating layer 594 described later, the insulating layers 1426, 1452, and 1454 are preferably insulating layers having a relatively low dielectric constant in order to reduce parasitic capacitance between wirings. The insulating layers 1426, 1452, and 1454 function as interlayer insulating films and planarizing films.

[0153] The conductive layer 1456 preferably includes a conductive layer having a barrier property against one or more selected from hydrogen, oxygen, and water.

[0154] For example, tantalum nitride may be used as the insulating layer having a barrier property against hydrogen. Furthermore, by stacking tantalum nitride and tungsten, which has high conductivity, it is possible to suppress diffusion of hydrogen from the transistor 1400d while maintaining the conductivity of the wiring. In this case, a structure in which the tantalum nitride layer having a barrier property against hydrogen is in contact with the insulating layer 1450 having a barrier property against hydrogen is preferable.

[0155] An insulating layer 523 is provided above the insulating layer 1454 and the conductive layer 1456. An insulating layer IS1 is provided over the insulating layer 523. A conductive layer functioning as a plug or a wiring is embedded in the insulating layer IS1 and the insulating layer 523. This allows the transistor 1400d to be connected to the conductive layer 524 provided in the element layer 630. Alternatively, one of the source or drain of the transistor MTCK may be connected to one of the source or drain of the transistor 1400d.

[0156] The transistor MTCK is provided on the insulating layer IS1.

[0157] The transistor MTCK is a type of semiconductor element that can amplify current or voltage, perform switching operations to control conduction or non-conduction, etc. The transistor MTCK is a transistor that uses an oxide semiconductor or a metal oxide for a semiconductor layer and a transistor that has an oxide semiconductor or a metal oxide for a channel formation region.

[0158] In this specification and the like, a transistor is an element having at least three terminals including a gate, a drain, and a source. A transistor has a region (also referred to as a channel formation region) where a channel is formed between the drain (drain terminal, drain region, or drain electrode) and the source (source terminal, source region, or source electrode), and current can flow between the source and the drain through the channel formation region. Note that in this specification and the like, the channel formation region refers to a region through which current mainly flows.

[0159] Furthermore, the functions of "source" and "drain" may be interchangeable when transistors of different polarities are used, or when the direction of current flow changes during circuit operation, etc. For this reason, the terms "source" and "drain" may be used interchangeably in this specification.

[0160] Specifically, the oxide semiconductor or metal oxide used in the channel formation region of the transistor MTCK can be gallium oxide, zinc oxide, indium gallium oxide (In-Ga oxide), gallium zinc oxide (Ga-Zn oxide, also referred to as GZO), aluminum zinc oxide (Al-Zn oxide, also referred to as AZO), indium gallium zinc oxide (In-Ga-Zn oxide, also referred to as IGZO), or the like, in a single layer or stacked layers. The channel length of the transistor MTCK is the distance between the source region and the drain region. In other words, the channel length of the transistor MTCK can be determined by the thickness of the insulating layer on the conductive layer.

[0161] The channel length of a planar transistor is limited by the exposure limit of photolithography, making further miniaturization difficult. However, the channel length of the transistor MTCK can be set by the film thickness of the insulating layer. Therefore, the channel length of the transistor MTCK can be made into an extremely fine structure that is equal to or less than the exposure limit of photolithography (e.g., 60 nm or less, 50 nm or less, 40 nm or less, 30 nm or less, 20 nm or less, or 10 nm or less, and 0.1 nm or more, 1 nm or more, or 5 nm or more). This increases the on-current of the transistor MTCK, thereby improving its frequency characteristics.

[0162] Note that the channel length of the transistor MTCK is determined by the thickness of the insulating layer on the conductive layer, and therefore the channel length does not affect the area occupied by the transistor MTCK, for example, the area of ​​the transistor MTCK in a planar view. By setting the channel length of the transistor MTCK to, for example, 1 μm or less, 500 nm or less, or 300 nm or less, productivity and yield can be improved in forming the insulating layer, forming openings in the insulating layer, etc. The channel length of the transistor MTCK is 0.1 nm or more, 1 nm or more, or 5 nm or more, and preferably 1 μm or less, 500 nm or less, or 300 nm or less.

[0163] The channel length L of the transistor MTCK is preferably at least smaller than the channel width W of the transistor MTCK. The channel length L of the transistor MTCK is preferably 0.1 to 0.99 times, and more preferably 0.5 to 0.8 times, the channel width W of the transistor MTCK. With this configuration, a transistor with good electrical characteristics and high reliability can be realized.

[0164] Moreover, an insulating layer IS4, an insulating layer 574, and an insulating layer 581 are stacked in this order on the transistor MTCK. A conductive layer MPG functioning as a plug or wiring is embedded in the insulating layers IS3, IS4, 574, and 581. The conductive layer MPG is preferably in contact with the conductive layer through an opening provided in the insulating layer and the oxide semiconductor layer. Contact between the conductive layer MPG and the conductive layer is preferable because contact resistance can be reduced. Alternatively, the conductive layer MPG and the oxide semiconductor layer may be in contact with each other, and the conductive layer MPG and the conductive layer may be connected via the oxide semiconductor layer.

[0165] The insulating layer 574 preferably has a function of suppressing diffusion of impurities such as water and hydrogen (e.g., hydrogen atoms and / or hydrogen molecules). That is, the insulating layer 574 preferably functions as a barrier insulating film that suppresses the impurities from entering the transistor MTCK. The insulating layer 574 also preferably has a function of suppressing diffusion of oxygen (e.g., oxygen atoms and / or oxygen molecules). For example, the insulating layer 574 preferably has lower oxygen permeability than the insulating layer IS2, the insulating layer IS3, and the insulating layer IS4.

[0166] Therefore, the insulating layer 574 preferably functions as a barrier insulating film that suppresses diffusion of impurities such as water and hydrogen. Therefore, the insulating layer 574 does not diffuse hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, or nitrogen oxide molecules (for example, N ２ O, NO, and NO ２ It is preferable to use an insulating material that has a function of suppressing the diffusion of impurities such as copper atoms and copper atoms (i.e., the impurities are less likely to permeate through the insulating material). Alternatively, it is preferable to use an insulating material that has a function of suppressing the diffusion of oxygen (e.g., oxygen atoms and / or oxygen molecules) (i.e., the oxygen is less likely to permeate through the insulating material).

[0167] For the insulating layer having a function of suppressing the permeation of impurities such as water and hydrogen and oxygen, any of the materials that can be used for the insulating layer having a function of suppressing the permeation of impurities and oxygen, which are exemplified in Embodiment 1, can be used.

[0168] In particular, it is preferable to use aluminum oxide or silicon nitride for the insulating layer 574. This can prevent impurities such as water and hydrogen from diffusing into the transistor MTCK from above the insulating layer 574. Alternatively, it can prevent oxygen contained in the insulating layer IS3 or the like from diffusing above the insulating layer 574.

[0169] The insulating layer 581 is a film that functions as an interlayer film, and preferably has a lower dielectric constant than the insulating layer 574. By using a material with a low dielectric constant as the interlayer film, the parasitic capacitance that occurs between wirings can be reduced. For example, the relative dielectric constant of the insulating layer 581 is preferably less than 4, more preferably less than 3. Furthermore, for example, the relative dielectric constant of the insulating layer 581 is preferably 0.7 times or less, more preferably 0.6 times or less, the relative dielectric constant of the insulating layer 574. By using a material with a low dielectric constant as the interlayer film for the insulating layer 581, the parasitic capacitance that occurs between wirings can be reduced.

[0170] The insulating layer 581 preferably has a reduced concentration of impurities such as water and hydrogen. In this case, the insulating layer 581 can be formed using, for example, silicon oxide, silicon oxynitride, silicon nitride oxide, or silicon nitride. The insulating layer 581 can be formed using, for example, silicon oxide to which fluorine has been added, silicon oxide to which carbon has been added, silicon oxide to which carbon and nitrogen have been added, or silicon oxide having vacancies. Silicon oxide and silicon oxynitride are particularly preferred because they are thermally stable. Materials such as silicon oxide, silicon oxynitride, and silicon oxide having vacancies are particularly preferred because they allow easy formation of a region containing excess oxygen. The insulating layer 581 can be formed using a resin. The insulating layer 581 may be formed using an appropriate combination of the above-mentioned materials.

[0171] An insulating layer 592 and an insulating layer 594 are stacked in this order over the insulating layer 574 and the insulating layer 581 .

[0172] The insulating layer 592 is preferably a barrier insulating layer that prevents impurities such as water and hydrogen from diffusing from the substrate 1410 and the transistor MTCK to a region above the insulating layer 592 (for example, a region where the light-emitting elements 650R, 650G, and 650B are provided). Therefore, the insulating layer 592 is preferably made of an insulating material that has a function of suppressing the diffusion of impurities such as hydrogen atoms, hydrogen molecules, and water molecules (the impurities are less likely to permeate through the insulating layer 592). Depending on the situation, the insulating layer 592 may be made of a material that prevents diffusion of nitrogen atoms, nitrogen molecules, and nitrogen oxide molecules (for example, N ２O, NO, and NO ２ It is preferable to use an insulating material that has a function of suppressing the diffusion of impurities such as copper atoms and copper atoms (i.e., the impurities are less likely to permeate through it), or that has a function of suppressing the diffusion of oxygen (e.g., oxygen atoms and / or oxygen molecules).

[0173] As an example of a film having a barrier property against hydrogen, silicon nitride formed by a CVD method can be used.

[0174] The insulating layer 594 is preferably an interlayer film with a low dielectric constant, similar to the insulating layer 581. For this reason, the insulating layer 594 can be formed using a material that can be used for the insulating layer 581.

[0175] Note that the insulating layer 594 preferably has a lower dielectric constant than the insulating layer 592. For example, the relative dielectric constant of the insulating layer 594 is preferably less than 4, more preferably less than 3. Furthermore, for example, the relative dielectric constant of the insulating layer 594 is preferably 0.7 times or less, more preferably 0.6 times or less, the relative dielectric constant of the insulating layer 592. By using a material with a low dielectric constant as the interlayer film for the insulating layer 594, it is possible to reduce parasitic capacitance that occurs between wirings.

[0176] Furthermore, a conductive layer MPG functioning as a plug or wiring is embedded in the insulating layers IS3, IS4, 574, and 581, and a conductive layer 596 functioning as a plug or wiring is embedded in the insulating layers 592 and 594. In particular, the conductive layer MPG and the conductive layer 596 are connected to a light-emitting element or the like provided above the insulating layer 594. Furthermore, for conductive layers functioning as plugs or wiring, the same reference numeral may be used to refer to multiple structures. Furthermore, in this specification and the like, the wiring and the plug connecting to the wiring may be integrated. That is, there are cases where a portion of the conductive layer functions as the wiring, and cases where a portion of the conductive layer functions as the plug.

[0177] As the material for each plug and wiring (for example, the conductive layer MPG, the conductive layer 1428, the conductive layer 1430, the conductive layer 1456, the conductive layer 524, and the conductive layer 596), one or more conductive materials selected from metal materials, alloy materials, metal nitride materials, and metal oxide materials can be used in a single layer or a stacked layer. A high-melting-point material such as tungsten or molybdenum, which has both heat resistance and conductivity, is preferably used, and tungsten is preferred. Alternatively, it is preferable to form the wiring using a low-resistance conductive material such as aluminum or copper. The use of a low-resistance conductive material can reduce the wiring resistance.

[0178] An insulating layer 598 and an insulating layer 599 are formed in this order over the insulating layer 594 and the conductive layer 596 .

[0179] For example, the insulating layer 598 is preferably an insulating layer having a barrier property against one or more selected from hydrogen, oxygen, and water, similar to the insulating layer 592. As the insulating layer 599, an insulating layer having a relatively low relative dielectric constant is preferably used in order to reduce parasitic capacitance generated between wirings, similar to the insulating layer 594. The insulating layer 599 also functions as an interlayer insulating film and a planarizing film.

[0180] On the insulating layer 599, a light emitting element 650 and a connecting portion 640 are formed.

[0181] The connection portion 640 may be referred to as a cathode contact portion, and is connected to the cathode electrodes of the light-emitting elements 650R, 650G, and 650B. In the connection portion 640 shown in Fig. 11, a conductive layer formed using the same process and material as the conductive layers 611a to 611c is connected to a common electrode 615, which will be described later. Note that Fig. 11 shows an example in which the conductive layer is connected to the common electrode 615 via a common layer 614, which will be described later, but the conductive layer and the common electrode 615 may also be in direct contact.

[0182] The connection portion 640 may be provided so as to surround the four sides of the display portion in a plan view, or may be provided within the display portion (for example, between adjacent light-emitting elements 650) (not shown).

[0183] The light emitting element 650R has a conductive layer 611a as a pixel electrode. Similarly, the light emitting element 650G has a conductive layer 611b as a pixel electrode, and the light emitting element 650B has a conductive layer 611c as a pixel electrode.

[0184] The conductive layers 611 a , 611 b , and 611 c are each connected to a conductive layer 596 buried in an insulating layer 594 via a conductive layer (plug) buried in an insulating layer 599 .

[0185] Light-emitting element 650R has a layer 613a, a common layer 614 on layer 613a, and a common electrode 615 on common layer 614. Light-emitting element 650G has a layer 613b, a common layer 614 on layer 613b, and a common electrode 615 on common layer 614. Light-emitting element 650B has a layer 613c, a common layer 614 on layer 613c, and a common electrode 615 on common layer 614.

[0186] Materials for forming the pair of electrodes (pixel electrode and common electrode) of the light-emitting element can include metals, alloys, electrically conductive compounds, and mixtures thereof. Specific examples of such materials include metals such as aluminum, magnesium, titanium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, indium, tin, molybdenum, tantalum, tungsten, palladium, gold, platinum, silver, yttrium, and neodymium, as well as alloys containing appropriate combinations of these metals. Other examples of such materials include ITO, ITSO, In-Zn oxide, and In-W-Zn oxide. Other examples of such materials include aluminum alloys (aluminum alloys) such as an alloy of aluminum, nickel, and lanthanum (Al-Ni-La), as well as silver alloys such as an alloy of silver and magnesium and an alloy of silver, palladium, and copper (Ag-Pd-Cu, also referred to as APC). Other examples of the material include elements belonging to Group 1 or 2 of the periodic table (e.g., lithium, cesium, calcium, and strontium) that are not listed above as examples, rare earth metals such as europium and ytterbium, alloys containing appropriate combinations of these, and graphene.

[0187] The display device 600A employs an SBS structure, which allows the materials and configuration to be optimized for each light-emitting element, increasing the degree of freedom in the selection of materials and configurations, and facilitating improvements in brightness and reliability.

[0188] The display device 600A is a top emission type, which allows transistors and the like to be arranged overlapping the light emitting region of the light emitting element, thereby increasing the aperture ratio of the pixel compared to a bottom emission type.

[0189] Note that the layer 613a is formed so as to cover the top surface and side surfaces of the conductive layer 611a. Similarly, the layer 613b is formed so as to cover the top surface and side surfaces of the conductive layer 611b. Similarly, the layer 613c is formed so as to cover the top surface and side surfaces of the conductive layer 611c. Therefore, the entire region where the conductive layers 611a, 611b, and 611c are provided can be used as the light-emitting regions of the light-emitting elements 650R, 650G, and 650B, thereby increasing the aperture ratio of the pixel.

[0190] In the light-emitting element 650R, the layer 613a and the common layer 614 can be collectively referred to as an EL layer. Similarly, in the light-emitting element 650G, the layer 613b and the common layer 614 can be collectively referred to as an EL layer. Similarly, in the light-emitting element 650B, the layer 613c and the common layer 614 can be collectively referred to as an EL layer.

[0191] The EL layer has at least a light-emitting layer. The light-emitting layer contains one or more light-emitting materials. As the light-emitting material, a material that emits light of a color such as blue, purple, blue-purple, green, yellow-green, yellow, orange, or red is appropriately used. Furthermore, a material that emits near-infrared light can also be used as the light-emitting material.

[0192] Examples of light-emitting substances that the light-emitting element has include fluorescent substances (fluorescent materials), phosphorescent substances (phosphorescent materials), substances that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence: TADF materials), and inorganic compounds (quantum dot materials, etc.).

[0193] The light-emitting layer may contain one or more organic compounds (host materials, assist materials, etc.) in addition to a light-emitting substance (guest material). As the one or more organic compounds, one or both of a substance with high hole-transport properties (hole-transport material) and a substance with high electron-transport properties (electron-transport material) can be used. Furthermore, as the one or more organic compounds, a bipolar substance (a substance with high electron-transport properties and high hole-transport properties) or a TADF material can be used.

[0194] In addition to the light-emitting layer, the EL layer may include one or more of a layer containing a substance with high hole-injecting properties (hole-injecting layer), a layer containing a hole-transporting material (hole-transporting layer), a layer containing a substance with high electron-blocking properties (electron-blocking layer), a layer containing a substance with high electron-injecting properties (electron-injecting layer), a layer containing an electron-transporting material (electron-transporting layer), and a layer containing a substance with high hole-blocking properties (hole-blocking layer).In addition, the EL layer may include one or both of a bipolar substance and a TADF material.

[0195] The light-emitting element can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-emitting element can be formed by a method such as a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, or a coating method.

[0196] The light-emitting element may have a single structure (a structure having only one light-emitting unit) or a tandem structure (a structure having multiple light-emitting units). The light-emitting unit has at least one light-emitting layer. The tandem structure is a structure in which multiple light-emitting units are connected in series via a charge-generating layer. When a voltage is applied between a pair of electrodes, the charge-generating layer injects electrons into one of the two light-emitting units and holes into the other. The tandem structure allows the light-emitting element to emit light with high brightness. Furthermore, the tandem structure can reduce the current required to achieve the same brightness compared to a single structure, thereby improving reliability. The tandem structure can also be called a stack structure.

[0197] Furthermore, by providing a microcavity structure to the light-emitting element, color purity can be improved.

[0198] The layers 613a, 613b, and 613c are processed into island shapes by photolithography. Therefore, the angles between the top surface and the side surface of each of the layers 613a, 613b, and 613c are close to 90 degrees at their edges. On the other hand, an organic film formed using, for example, a fine metal mask (FMM) tends to become gradually thinner toward the edge. For example, the top surface is formed in a sloped shape over a range of 1 μm to 10 μm up to the edge, making it difficult to distinguish between the top surface and the side surface.

[0199] The layers 613a, 613b, and 613c have a clear distinction between the top surface and the side surface. As a result, in adjacent layers 613a and 613b, one side surface of the layer 613a and one side surface of the layer 613b are arranged opposite each other. This is true for any combination of layers 613a, 613b, and 613c.

[0200] The layers 613a, 613b, and 613c each include at least a light-emitting layer. For example, it is preferable that the layer 613a includes a light-emitting layer that emits red light, the layer 613b includes a light-emitting layer that emits green light, and the layer 613c includes a light-emitting layer that emits blue light. Furthermore, the respective light-emitting layers may be cyan, magenta, yellow, or white, in addition to the above colors.

[0201] The layers 613a, 613b, and 613c preferably include a light-emitting layer and a carrier transport layer (electron transport layer or hole transport layer) on the light-emitting layer. The surfaces of the layers 613a, 613b, and 613c may be exposed during the manufacturing process of the display device. Therefore, by providing the carrier transport layer on the light-emitting layer, the light-emitting layer can be prevented from being exposed to the outermost surface, and damage to the light-emitting layer can be reduced. This can improve the reliability of the light-emitting element.

[0202] The common layer 614 includes, for example, an electron injection layer or a hole injection layer. Alternatively, the common layer 614 may include a stack of an electron transport layer and an electron injection layer, or a stack of a hole transport layer and a hole injection layer. The common layer 614 is shared by the light-emitting element 650R, the light-emitting element 650G, and the light-emitting element 650B. Note that the common layer 614 does not necessarily have to be provided, and the entire EL layer of the light-emitting element may be provided in an island shape, such as the layer 613a, the layer 613b, and the layer 613c.

[0203] 11 , the common electrode 615 is shared by the light-emitting elements 650R, 650G, and 650B. The common electrode 615 shared by the plurality of light-emitting elements is connected to a conductive layer included in the connection portion 640.

[0204] The insulating layer 625 preferably functions as a barrier insulating layer against water and / or oxygen. The insulating layer 625 preferably has a function of suppressing diffusion of water and / or oxygen. The insulating layer 625 preferably has a function of capturing or fixing (also referred to as gettering) water and / or oxygen. When the insulating layer 625 has at least one of these functions, it is possible to suppress the intrusion of impurities (typically, water and / or oxygen) that may diffuse from the outside into each light-emitting element. With this structure, a highly reliable light-emitting element and a highly reliable display device can be provided.

[0205] The insulating layer 625 can be the above-described oxygen barrier insulating layer, and is preferably formed using aluminum oxide or silicon nitride.

[0206] The insulating layer 625 preferably has a low impurity concentration. This can prevent impurities from entering the EL layer from the insulating layer 625 and causing deterioration of the EL layer. Furthermore, a low impurity concentration in the insulating layer 625 can improve barrier properties against water and / or oxygen. For example, it is desirable that the insulating layer 625 has a sufficiently low hydrogen concentration and / or carbon concentration.

[0207] An insulating layer containing an organic material can be suitably used as the insulating layer 627. A photosensitive resin is preferably used as the organic material, and for example, a photosensitive resin composition containing an acrylic resin may be used. Note that in this specification and the like, the term "acrylic resin" does not refer only to polymethacrylic acid ester or methacrylic resin, but may refer to all acrylic polymers in a broad sense.

[0208] The organic materials that can be used for the insulating layer 627 are not limited to those described above. For example, the insulating layer 627 may be made of acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenolic resin, or precursors of these resins. The insulating layer 627 may also be made of organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral (PVB), polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin. The insulating layer 627 may also be made of, for example, a photoresist as a photosensitive resin. Examples of photosensitive resins include positive-type materials and negative-type materials.

[0209] The insulating layer 627 may be made of a material that absorbs visible light. The insulating layer 627 absorbs light emitted from the light-emitting element, thereby preventing light from leaking from the light-emitting element to an adjacent light-emitting element through the insulating layer 627 (stray light). This can improve the display quality of the display device. Furthermore, since the display quality can be improved without using a polarizing plate in the display device, the display device can be made lighter and thinner.

[0210] Examples of materials that absorb visible light include materials containing pigments such as black, materials containing dyes, light-absorbing resin materials (e.g., polyimide), and resin materials that can be used for color filters (color filter materials). In particular, using a resin material in which two or more color filter materials are laminated or mixed is preferable because it can enhance the visible light blocking effect. In particular, mixing three or more color filter materials makes it possible to obtain a black or nearly black resin layer.

[0211] The insulating layer 627 can be formed by a wet film formation method such as spin coating, dipping, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating. In particular, it is preferable to form the organic insulating film that becomes the insulating layer 627 by spin coating.

[0212] The insulating layer 627 is formed at a temperature lower than the heat resistance temperature of the EL layer. The substrate temperature when the insulating layer 627 is formed is typically room temperature or higher and 200° C. or lower, preferably 180° C. or lower, more preferably 160° C. or lower, more preferably 150° C. or lower, and more preferably 140° C. or lower.

[0213] Note that the insulating layer 627 preferably has a tapered shape on the side surface. By forming the side surface edge of the insulating layer 627 into a forward tapered shape (less than 90 degrees, preferably 60 degrees or less, and more preferably 45 degrees or less), the common layer 614 and the common electrode 615 provided on the side surface edge of the insulating layer 627 can be formed with good coverage without causing discontinuities or local thinning of the film. This can improve the in-plane uniformity of the common layer 614 and the common electrode 615, thereby improving the display quality of the display device.

[0214] In addition, in a cross-sectional view of the display device, the upper surface of the insulating layer 627 preferably has a convex curved shape. The convex curved shape of the upper surface of the insulating layer 627 preferably has a shape that bulges gently toward the center. By forming the insulating layer 627 in such a shape, the common layer 614 and the common electrode 615 can be formed with good coverage over the entire insulating layer 627.

[0215] The insulating layer 627 is formed in a region between two EL layers (for example, the region between the layer 613a and the layer 613b), with a portion of the insulating layer 627 sandwiched between a side edge of one EL layer (for example, the layer 613a) and a side edge of the other EL layer (for example, the layer 613b).

[0216] It is also preferable that one end of the insulating layer 627 overlaps with the conductive layer 611a functioning as a pixel electrode, and the other end of the insulating layer 627 overlaps with the conductive layer 611b functioning as a pixel electrode. This structure allows the end of the insulating layer 627 to be formed on a flat or substantially flat region of the layer 613a (layer 613b). Therefore, it is relatively easy to process the insulating layer 627 into a tapered shape as described above.

[0217] As described above, by providing the insulating layer 627 or the like, it is possible to prevent discontinuities and locally thin portions from being formed in the common layer 614 and the common electrode 615 from the flat or substantially flat region of the layer 613 a to the flat or substantially flat region of the layer 613 b. This makes it possible to prevent poor connection between the light-emitting elements in the common layer 614 and the common electrode 615 due to discontinuities and an increase in electrical resistance due to locally thin portions.

[0218] The display device of this embodiment can reduce the distance between light-emitting elements. Specifically, the distance between light-emitting elements, the distance between EL layers, or the distance between pixel electrodes can be less than 10 μm, 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, 500 nm or less, 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm or less. In other words, the display device of this embodiment has a region where the distance between two adjacent island-shaped EL layers is 1 μm or less, preferably a region where the distance is 0.5 μm (500 nm) or less, and more preferably a region where the distance is 100 nm or less. In this way, by reducing the distance between light-emitting elements, a display device with high definition and a large aperture ratio can be provided.

[0219] A protective layer 631 is provided on the light-emitting element 650. The protective layer 631 functions as a passivation film to protect the light-emitting element 650. By providing the protective layer 631 covering the light-emitting element, impurities such as water and oxygen can be prevented from entering the light-emitting element, thereby improving the reliability of the light-emitting element 650. The protective layer 631 preferably has a single-layer structure or a stacked structure including at least an inorganic insulating film. Examples of the inorganic insulating film include oxide films or nitride films such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, and a hafnium oxide film. Alternatively, a semiconductor material such as indium gallium oxide or indium gallium zinc oxide (IGZO) may be used for the protective layer 631. The protective layer 631 can be formed by an ALD method, a CVD method, a sputtering method, or the like. While the protective layer 631 includes an inorganic insulating film, the present invention is not limited to this. For example, the protective layer 631 may have a stacked structure of an inorganic insulating film and an organic insulating film.

[0220] The protective layer 631 and the substrate 610 are bonded via an adhesive layer 607. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light-emitting element. In FIG. 11 , the space between the substrates 1410 and 610 is filled with the adhesive layer 607, and a solid sealing structure is applied. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), and a hollow sealing structure may be applied. In this case, the adhesive layer 607 may be provided so as not to overlap with the light-emitting element. Alternatively, the space may be filled with a resin different from the frame-shaped adhesive layer 607.

[0221] The adhesive layer 607 can be made of various curable adhesives, such as ultraviolet-curable photocurable adhesives, reactive curable adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. Epoxy resins with low moisture permeability are particularly preferred. Two-component resins may also be used. An adhesive sheet may also be used.

[0222] The display device 600A is a top-emission type. Light emitted from the light-emitting element is emitted toward the substrate 610. Therefore, it is preferable to use a material that is highly transparent to visible light for the substrate 610. For example, a substrate that is highly transparent to visible light is selected for the substrate 610 from among the substrates that can be used for the substrate 1410. The pixel electrode contains a material that reflects visible light, and the counter electrode (common electrode 615) contains a material that transmits visible light.

[0223] Note that the display device of one embodiment of the present invention may not be a top emission type but may be a bottom emission type in which light emitted from a light-emitting element is emitted toward the substrate 1410. In this case, a substrate having high transmittance to visible light is selected as the substrate 1410.

[0224] [Configuration Example 2 of Display Device] FIG. 12 shows a cross-sectional view of a display device 600B.

[0225] The display device 600B can be a flexible display device (also referred to as a flexible display) by using flexible substrates for the substrate 541 and the substrate 610. The substrate 541 is attached to the insulating layer 545 by an adhesive layer 543. The substrate 610 is attached to the protective layer 631 by an adhesive layer 607.

[0226] The element layer 660 of the display device 600B differs from the element layer 660 of the display device 600A mainly in that the same configuration is applied to the layers 613a, 613b, and 613c, and further in that colored layers 628R, 628G, and 628B are provided.

[0227] The layers 613a, 613b, and 613c are formed in the same process using the same material. The layers 613a, 613b, and 613c are separated from one another. By providing an island-shaped EL layer for each light-emitting element, leakage current (sometimes referred to as lateral leakage current) between adjacent light-emitting elements can be suppressed. This prevents unintended light emission due to crosstalk and suppresses color mixing between adjacent light-emitting elements, thereby achieving a display device with extremely high contrast.

[0228] 12 emit white light. The white light emitted by the light emitting elements 650R, 650G, and 650B passes through the colored layers 628R, 628G, and 628B, thereby obtaining light of a desired color.

[0229] By applying a microcavity structure, a light emitting element configured to emit white light may emit light of a specific wavelength such as red, green, or blue that is intensified.

[0230] The light emitted from the light-emitting element 650R is extracted as red light to the outside of the display device 600B via the colored layer 628R. Similarly, the light emitted from the light-emitting element 650G is extracted as green light to the outside of the display device 600B via the colored layer 628G. The light emitted from the light-emitting element 650B is extracted as blue light to the outside of the display device 600B via the colored layer 628B.

[0231] For a light emitting element that emits white light, it is preferable to use a tandem structure.

[0232] Alternatively, for example, the light-emitting elements 650R, 650G, and 650B shown in FIG. 12 emit blue light. In this case, the layers 613a, 613b, and 613c each include one or more light-emitting layers that emit blue light. In the subpixels that emit blue light, the blue light emitted by the light-emitting element 650B can be extracted. Furthermore, in the subpixels that emit red light and the subpixels that emit green light, color conversion layers can be provided between the light-emitting element 650R and the coloring layer 628R and between the light-emitting element 650G and the coloring layer 628G to convert the blue light emitted by the light-emitting element 650R or the light-emitting element 650G into light with a longer wavelength, thereby extracting red or green light. By extracting light that has passed through the color conversion layer through the coloring layer, light other than the desired color can be absorbed by the coloring layer, thereby improving the color purity of the light emitted by the subpixels.

[0233] The colored layer is a colored layer that selectively transmits light in a specific wavelength range and absorbs light in other wavelength ranges. For example, a red (R) color filter that transmits light in the red wavelength range, a green (G) color filter that transmits light in the green wavelength range, and a blue (B) color filter that transmits light in the blue wavelength range can be used. Each colored layer can be made of one or more of a metal material, a resin material, a pigment, and a dye. The colored layers are formed at desired positions by a printing method, an inkjet method, an etching method using photolithography, or the like.

[0234] The element layer 630 of the display device 600B has the same configuration as the element layer 630 of the display device 600A, and therefore a detailed description thereof will be omitted.

[0235] The display device 600B differs from the display device 600A in that it does not include the element layer 620 but includes an element layer 635. The element layer 635 has a similar structure to that of the element layer 630.

[0236] At least some of the transistors included in the element layer 635 are connected to conductive layers or transistors included in the element layer 630 through plugs, wirings, or the like. Note that a wiring layer 670 may be provided between the element layer 630 and the element layer 635.

[0237] The element layer 635 is preferably provided with one or both of a pixel circuit and a driver circuit of a display device.

[0238] 12 shows an example in which two element layers each including an OS transistor are stacked (element layer 630 and element layer 635), but the number of stacked element layers is not limited to this and may be three or more. For example, when three or more element layers each including an OS transistor are stacked, it is preferable that the bottom layer be used for a driver circuit (either a gate driver or a source driver, or both) of the display device, the top layer be used for a pixel circuit of the display device, and the layers located between them be used for the pixel circuit or the driver circuit, respectively.

[0239] Note that Si transistors are typically formed on a single-crystal Si wafer, making it difficult to provide a flexible structure. On the other hand, when a display device is formed using only OS transistors without using Si transistors, as shown in Figure 12, a flexible structure can be achieved through a relatively simple manufacturing process.

[0240] [Structure Example of Light-Emitting Element] Next, a light-emitting element that can be used for a display device according to one embodiment of the present invention will be described. Hereinafter, examples of the structure of a light-emitting element that is different from the structures shown in FIGS. 11 and 12 will be mainly described.

[0241] Fig. 13A shows a schematic top view of a portion of a display unit having a plurality of light-emitting elements. The display unit has a plurality of light-emitting elements 61R that emit red light, a plurality of light-emitting elements 61G that emit green light, and a plurality of light-emitting elements 61B that emit blue light. In Fig. 13A, the symbols R, G, and B are assigned within the light-emitting region of each light-emitting element to easily distinguish between the light-emitting elements. Also, Fig. 13A illustrates a configuration having three light-emitting colors, red (R), green (G), and blue (B), but this is not limiting. For example, a configuration having four or more colors may also be used.

[0242] Fig. 13B is a cross-sectional view taken along dashed line A1-A2 in Fig. 13A. Each of the light-emitting elements 61R, 61G, and 61B shown in Fig. 13B is provided over an insulating layer 363 and includes a conductive layer 171 that functions as a pixel electrode and a conductive layer 173 that functions as a common electrode. The insulating layer 363 can be an inorganic insulating film or an organic insulating film, or both.

[0243] The light-emitting element 61R has an EL layer 172R between a conductive layer 171 functioning as a pixel electrode and a conductive layer 173 functioning as a common electrode. The EL layer 172R contains a light-emitting compound that emits light having a peak in the red wavelength range. The EL layer 172G included in the light-emitting element 61G contains a light-emitting compound that emits light having a peak in the green wavelength range. The EL layer 172B included in the light-emitting element 61B contains a light-emitting compound that emits light having a peak in the blue wavelength range.

[0244] The conductive layer 171 functioning as a pixel electrode is provided for each light-emitting element. The conductive layer 173 functioning as a common electrode is provided as a continuous layer common to each light-emitting element. A conductive film that transmits visible light is used for either the conductive layer 171 functioning as a pixel electrode or the conductive layer 173 functioning as a common electrode, and a conductive film that is reflective is used for the other.

[0245] For example, when the light-emitting element 61R is a top-emission type, the light 175R emitted from the light-emitting element 61R is emitted toward the conductive layer 173. When the light-emitting element 61R is a top-emission type, the light 175G emitted from the light-emitting element 61G is emitted toward the conductive layer 173. When the light-emitting element 61B is a top-emission type, the light 175B emitted from the light-emitting element 61B is emitted toward the conductive layer 173.

[0246] An insulating layer 272 is provided to cover an edge portion of the conductive layer 171 functioning as a pixel electrode. The edge portion of the insulating layer 272 is preferably tapered. The insulating layer 272 can be formed using either or both of an inorganic insulating film and an organic insulating film.

[0247] The insulating layer 272 is provided to prevent adjacent light-emitting elements from accidentally short-circuiting and erroneously emitting light. In addition, when a metal mask is used to form the EL layer, the insulating layer 272 also functions to prevent the metal mask from coming into contact with the conductive layer 171.

[0248] The EL layer 172R, the EL layer 172G, and the EL layer 172B each have a region in contact with the top surface of the conductive layer 171 that functions as a pixel electrode, and a region in contact with the surface of the insulating layer 272. Ends of the EL layer 172R, the EL layer 172G, and the EL layer 172B are located on the insulating layer 272.

[0249] 13B, a gap is provided between two EL layers between light-emitting elements that emit different colors. In this manner, it is preferable that the EL layer 172R, the EL layer 172G, and the EL layer 172B are not in contact with each other. This can effectively prevent current from flowing through two adjacent EL layers, which can cause unintended light emission (also known as crosstalk). Therefore, contrast can be increased, and a display device with high display quality can be realized.

[0250] The EL layer 172R, the EL layer 172G, and the EL layer 172B can be separately formed by vacuum deposition using a shadow mask such as a metal mask. Alternatively, they may be separately formed by photolithography. By using photolithography, it is possible to realize a high-definition display device that is difficult to achieve using a metal mask.

[0251] A protective layer 271 is provided on the conductive layer 173, which functions as a common electrode, to cover the light-emitting elements 61R, 61G, and 61B. The protective layer 271 has a function of preventing impurities such as water from diffusing from above into each light-emitting element. The material of the protective layer 271 can be the same as that of the protective layer 631 described above.

[0252] 13C shows a light-emitting element 61W that emits white light. The light-emitting element 61W includes an EL layer 172W that emits white light between a conductive layer 171 that functions as a pixel electrode and a conductive layer 173 that functions as a common electrode.

[0253] The EL layer 172W may be configured by stacking two or more light-emitting layers, each of which has a complementary color. Alternatively, a tandem EL layer may be used, in which a charge generating layer is sandwiched between light-emitting layers.

[0254] 13C shows three light-emitting elements 61W lined up. A colored layer 264R is provided on the top of the left light-emitting element 61W. The colored layer 264R functions as a bandpass filter that transmits red light. Similarly, a colored layer 264G that transmits green light is provided on the top of the center light-emitting element 61W, and a colored layer 264B that transmits blue light is provided on the top of the right light-emitting element 61W. This allows the display device to display color images.

[0255] Here, the EL layer 172W is separated between two adjacent light-emitting elements 61W. This prevents unintended light emission due to current flowing through the EL layer 172W between the two adjacent light-emitting elements 61W. In particular, when a stacked EL layer in which a charge generation layer is provided between two light-emitting layers is used as the EL layer 172W, the higher the resolution, i.e., the smaller the distance between adjacent pixels, the more pronounced the effect of crosstalk becomes, resulting in a decrease in contrast. Therefore, by using this configuration, a display device that combines high resolution and high contrast can be realized.

[0256] The EL layer 172W is preferably separated by photolithography, which allows the distance between the light-emitting elements to be narrowed, thereby achieving a display device with a higher aperture ratio than when a shadow mask such as a metal mask is used.

[0257] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0258] Embodiment 4 In this embodiment, an example of a battery having a different shape from the rectangular secondary battery 500 shown in Embodiment 1, specifically, an example of using a plurality of elongated secondary batteries, will be described below.

[0259] 14A is a rear view of an electronic device 440 according to one embodiment of the present invention, illustrating an example in which a group of elongated batteries is used as the secondary battery 500. The group of elongated batteries is configured to accommodate the flexibility of the band portion 443. Note that in FIG. 14A , the same components as those in FIG. 2A are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0260] 14B is a diagram showing an example of a group of multiple elongated batteries, illustrating an elongated first battery 500f and an adjacent elongated second battery 500g wrapped in plastic film 500p, and showing a mechanism that can change the distance between the elongated first battery 500f and the elongated second battery 500g when folded at boundary 500x. By arranging these mechanisms, a bellows structure can be formed that can expand and contract in the minor axis direction of the elongated batteries (the direction of the arrow in FIG. 14B ), thereby increasing the flexibility of band portion 443.

[0261] Furthermore, if the bellows structure shown in FIG. 14B is placed inside the band portion 443, space is required for folding at the boundary 500x, so a hollow portion is provided in the band portion 443 and the bellows structure shown in FIG. 14B is placed in that hollow portion. Since blocking the hollow portion of the band portion 443 from the outside air could impair the flexibility of the band, the hollow portion has a vent that connects to the outside air. When worn on the head and the head is moved, the band portion 443 expands and contracts. The bellows structure shown in FIG. 14B can also be configured to allow air to enter the inside of the band portion 443 through the vent when expanded or contracted. This air-entering structure improves the heat dissipation efficiency of the first battery 500f, thereby promoting heat dissipation from the first battery 500f.

[0262] Also, in FIG. 14B, it is preferable that multiple elongated batteries (e.g., a first battery 500f and a second battery 500g) are connected to each other in series or parallel using wiring, which is not shown for simplicity.

[0263] Furthermore, flexible secondary batteries can be used as the elongated first battery 500f or the elongated second battery 500g, as shown in Fig. 14C, which is a schematic diagram illustrating the state of the elongated battery bent in the longitudinal direction (the direction of the arrow in Fig. 14C).

[0264] As shown in FIG. 14C, the secondary battery 500 can be curved to fit the shape of the back of the head of the user wearing it, improving the fit.

[0265] 14D is an example that differs slightly from FIG. 14C, in which the secondary battery 500 is configured with even more secondary batteries. Arranging the small batteries in a tiled pattern increases the flexibility of the band. The secondary battery 500 shown in FIG. 14D can be bent in various directions (in the direction of the arrows in FIG. 14D). This allows for smooth attachment and detachment of the electronic device worn on the user's head.

[0266] This embodiment mode can be freely combined with other embodiment modes.

[0267] 18: control circuit, 30: second secondary battery, 31: first DCDC circuit, 32: second DCDC circuit, 32a: transistor, 33: charging circuit, 35: current sense circuit, 36: voltage sense circuit, 37: resistance element, 38: operational amplifier, 39a: resistance element, 39b: resistance element, 400: back of head, 411L: display device, 411R: display device, 412L: lens, 412R: lens, 415: cover part, 440: electronic device, 441L: camera, 441R: camera, 442: frame part, 443: band part, 444: speaker, 445: position adjustment dial, 446: Connection portion, 450: monitoring circuit, 500: secondary battery, 500a: region, 500c: region, 500d: region, 500f: first battery, 500g: second battery, 500p: plastic film, 500x: boundary, 501: positive electrode current collector, 502: positive electrode active material layer, 503: positive electrode, 504: negative electrode current collector, 505: negative electrode active material layer, 506: negative electrode, 507: separator, 508: electrolyte, 509: exterior body, 509a: region, 509b: region, 509c: region, 510: positive electrode lead electrode, 511: negative electrode lead electrode, 512: welding region, 513: curved portion, 514: sealing portion, 523 : insulating layer, 524: conductive layer, 541: substrate, 543: adhesive layer, 545: insulating layer, 574: insulating layer, 581: insulating layer, 592: insulating layer, 594: insulating layer, 596: conductive layer, 598: insulating layer, 599: insulating layer, 600A: display device, 600B: display device, 607: adhesive layer, 610: substrate, 611a: conductive layer, 611b: conductive layer, 611c: conductive layer, 613a: layer, 613b: layer, 613c: layer, 614: common layer, 615: common electrode, 618a: sacrificial layer, 620: element layer, 625: insulating layer, 627: insulating layer, 628B: colored layer, 628G: colored layer, 628R: Colored layer, 630: element layer, 631: protective layer, 635: element layer, 640: connection portion, 650: light-emitting element, 650B: light-emitting element, 650G: light-emitting element, 650R: light-emitting element, 660: element layer, 670: wiring layer, 1400d: transistor, 1410: substrate, 1412: element isolation layer, 1413: semiconductor region, 1414a: low-resistance region, 1414b: low-resistance region, 1415: insulating layer, 1416: conductive layer, 1417: insulating layer, 1420: insulating layer, 1422: insulating layer, 1424: insulating layer, 1426: insulating layer, 1428: conductive layer, 1430: conductive layer, 1450: insulating layer,1452: insulating layer, 1454: insulating layer, 1456: conductive layer,

Claims

A housing, a first display device, a second display device, a display control circuit for controlling image display on the first display device and the second display device, a speaker, an imaging device for photographing the external environment, an adjustment unit for adjusting the positions of the first display device and the second display device, a flexible secondary battery, and having the flexible secondary battery is provided in a band portion, the band portion is fixed to the speaker and the housing, an electronic device in which the first display device, the second display device, the display control circuit, and the imaging device are fixed to the housing. A housing worn on the user's head, a first display device having a display surface for the user's left eye, a second display device having a display surface for the user's right eye, a display control circuit for controlling image display on the first display device and the second display device, a speaker on the side of the user's head, an imaging device for photographing the external environment in front of the user, an adjustment unit for adjusting the relative positions of the user's both eyes and the first display device and the second display device, an electronic device having a flexible secondary battery on the back of the user's head. In claim 1 or claim 2, the electronic device has a second secondary battery larger than the flexible secondary battery, when the power supply from the second secondary battery stops, the power supply is switched to the flexible secondary battery, and an electronic device for displaying the external environment photographed by the imaging device. In claim 3, the second secondary battery is a flexible secondary battery. In claim 1 or claim 2, the first display device or the second display device has a semiconductor substrate, a transistor having a metal oxide formed on the semiconductor substrate as a channel, and an organic light-emitting element on the transistor.

Images