Optoelectronic chip and communication device

Abstract

An optoelectronic chip and a communication device, relating to the technical field of optoelectronic chips. The optoelectronic chip comprises a substrate, a laser device and an optical device, the substrate being provided with an optical conduction part and an accommodation cavity which are adjacent to each other. The optical conduction part is internally provided with a first waveguide, the first waveguide comprising at least two sub-waveguides which are arranged at intervals in a first direction, the projections of any two adjacent sub-waveguides among the at least two sub-waveguides in the first direction overlapping, and the interval of any two adjacent sub-waveguides being within a preset range. The laser device is arranged in the accommodation cavity, and the laser device is in coupling connection to one of the first waveguides. The laser device, the optical conduction part and the optical device are sequentially arranged, and the optical device is in coupling connection to the other one of the first waveguides. By providing the first waveguide, the present application uses the coupling design of the plurality of sub-waveguides to change the height position of a laser on different waveguides, thereby achieving alignment of laser devices of different laser emission heights and waveguides, and improving the degree of coupling and lowering coupling loss.

Description

Optoelectronic chips and communication equipment

[0001] This application claims priority to the Chinese patent application filed with the State Intellectual Property Office of China on January 18, 2024, with application number 202410074152.X, and priority to the Chinese patent application with the invention name “Optoelectronic Chip and Communication Equipment”, all contents of which are incorporated by reference into this application. Technical Field

[0002] The present application relates to the technical field of optoelectronic chips, and in particular to an optoelectronic chip and a communication device. Background Art

[0003] Heterogeneous integration of optoelectronic chips is a technology that integrates optoelectronic and microelectronic devices made of different materials. For example, Group III-V semiconductor materials or optical amplifiers can be flip-chip bonded to silicon-based optical chips. Heterogeneous integration of optoelectronic chips offers advantages such as high integration density, low cost, and low power consumption.

[0004] Currently, lasers are coupled to waveguides in silicon-based chips, which then transmit light to other optical devices through the waveguides. However, when integrating multiple lasers, the height differences between the emission heights of the different lasers and the waveguides lead to high coupling losses. Summary of the Invention

[0005] The present application provides an optoelectronic chip and a communication device. By setting a first waveguide, it is possible to achieve alignment between lasers with different luminous heights and the waveguide, thereby reducing coupling loss.

[0006] In a first aspect, the present application provides an optoelectronic chip, comprising a substrate, a laser, and an optical device, wherein the substrate has an adjacent light-transmitting portion and a receiving cavity, a first waveguide is disposed in the light-transmitting portion, the first waveguide comprising at least two sub-waveguides spaced apart along a first direction, the projections of any two adjacent sub-waveguides along the first direction partially overlapping, and the interval between the two adjacent sub-waveguides being within a preset range; the laser is located in the receiving cavity, the laser is coupled to one of the sub-waveguides of the first waveguide; the laser, the light-transmitting portion, and the optical device are disposed in sequence, and the optical device is coupled to another sub-waveguide of the first waveguide.

[0007] The optoelectronic chip provided in the present application sets a first waveguide and utilizes a multiple sub-waveguide coupling design to change the laser position in height on different waveguides, thereby achieving alignment of lasers with different light-emitting heights with the waveguide, improving coupling degree and reducing coupling loss.

[0008] In one possible implementation, the first waveguide includes a spacer located between the overlapping regions of the projections of two adjacent sub-waveguides along the first direction. The refractive index of the sub-waveguides on both sides adjacent to the spacer is greater than the refractive index of the spacer. The refractive index of the sub-waveguides on both sides adjacent to the spacer is greater than the refractive index of the spacer. This enables evanescent wave coupling of laser light in the spacer and in the region where the projections of the sub-waveguides on both sides adjacent to the spacer overlap along the first direction, thereby changing the propagation direction of the laser light.

[0009] In one possible implementation, the length of the spacer along the first direction is less than 250 nanometers. This length ensures that evanescent wave coupling occurs in the region where the projections of the spacer and the sub-waveguides on both sides of the spacer overlap along the first direction, thereby changing the propagation direction of the laser light.

[0010] In one possible implementation, the material of the spacer is the same as the material of the outer portion of the first waveguide in the light transmission portion. The material of the spacer and the outer portion of the first waveguide in the light transmission portion can be the same as the material of the substrate, which helps reduce processing difficulty.

[0011] In one possible implementation, the optical transmission portion further includes a second waveguide, with both ends of the second waveguide coupled to a laser and an optical device, respectively. There are at least two lasers, and the first waveguide includes a first sub-waveguide, wherein the first sub-waveguide and the second waveguide are coupled to different lasers, respectively. The sub-waveguide in the first waveguide coupled to the optical device is a second sub-waveguide, and the second sub-waveguide and the second waveguide are located in the same plane perpendicular to the first direction. For example, there can be two lasers, and the emission heights of the two lasers can be different. The laser with the lower emission height can be connected to the second waveguide, and the laser with the higher emission height can be connected to the first waveguide. The lasers are coupled to the same height as the output ends of the second waveguide via the multiple sub-waveguides in the first waveguide, so that lasers with different emission heights can be output from the waveguide at the same height and enter the optical device at the same height. Moreover, lasers of different heights can be placed in the same groove, and the groove can be formed in the optoelectronic chip by etching once, which improves the accuracy of controlling the laser's luminous height, realizes the alignment of lasers of different luminous heights with the waveguide, improves the coupling degree, reduces coupling loss, and improves the quality of the optoelectronic chip.

[0012] In one possible implementation, the first waveguide includes at least two sub-waveguides arranged in sequence along a first direction, and the projections of any two adjacent sub-waveguides along the first direction partially overlap, and the two adjacent sub-waveguides are in contact with each other. The laser can be transmitted from the sub-waveguide located on one side of the first direction to the sub-waveguide located on the opposite side of the first direction, thereby changing the propagation direction of the laser.

[0013] In one possible implementation, in at least some of the adjacent two sub-waveguides, the refractive index of the sub-waveguide closer to the optical device is greater than or equal to the refractive index of the sub-waveguide closer to the laser. The refractive index of the sub-waveguide closer to the optical device is greater than the refractive index of the sub-waveguide closer to the laser, which facilitates the transmission of laser light from the sub-waveguide closer to the laser to the sub-waveguide closer to the optical device.

[0014] In one possible implementation, the at least two sub-waveguides are a first sub-waveguide, a second sub-waveguide, and a transition waveguide. The first sub-waveguide, the transition waveguide, and the second sub-waveguide are stacked and spaced apart along the first direction. The first sub-waveguide is coupled to the laser, and the second sub-waveguide is coupled to the optical device. The transition waveguide and the first sub-waveguide's projections along the first direction partially overlap, and the transition waveguide and the second sub-waveguide's projections along the first direction partially overlap. To ensure the coupling between the laser and the waveguide when the laser's emission height is too high, a transition waveguide is provided between the first sub-waveguide coupled to the laser and the second sub-waveguide coupled to the optical device to improve the coupling.

[0015] In a possible implementation, one of the at least two sub-waveguides is a first sub-waveguide, and the other is a second sub-waveguide, the first sub-waveguide is coupled to the laser, and the second sub-waveguide is coupled to the optical device;

[0016] In the overlapping portion of the projections, the first sub-waveguide includes a first changing region, and a width of the first changing region along the second direction gradually decreases from the laser to the optical device, and / or the second sub-waveguide includes a second changing region, and a width of the second changing region along the second direction gradually increases from the laser to the optical device, and the second direction is perpendicular to the first direction.

[0017] The width of the first sub-waveguide along the second direction in the first changing region gradually decreases from the laser to the optical device, and the width of the second sub-waveguide along the second direction in the second changing region gradually increases from the laser to the optical device, thereby coupling the light in the first sub-waveguide into the second sub-waveguide.

[0018] In one possible implementation, the width of the first variable region along the second direction decreases from a first width to a second width, with the first width ranging from 0.7 microns to 0.9 microns, and the second width ranging from 0.1 microns to 0.2 microns. The first width can gradually decrease from the laser to the optical device to the second width, with the first and second widths varying within this defined range. This facilitates evanescent wave coupling, coupling light from the first sub-waveguide into the second sub-waveguide, and achieving enhanced coupling.

[0019] In one possible implementation, the width of the second variable region along the second direction increases from a third width to a fourth width, wherein the third width is within a range of 1.1 microns to 1.3 microns, and the fourth width is within a range of 1.2 microns to 2 microns. The third width can gradually increase from the laser to the optical device to the fourth width, and the third and fourth widths vary within this limited range, which facilitates evanescent wave coupling, coupling light from the first sub-waveguide into the second sub-waveguide, and achieving a better coupling effect.

[0020] In one possible implementation, in the portion where the projections overlap, the projections of the first changing region and the second changing region along the first direction at least partially overlap, with the length of the overlapping portion being less than 250 microns. Varying the length of the overlapping portion within this limited range facilitates evanescent wave coupling, coupling light from the first sub-waveguide into the second sub-waveguide, and achieving a better coupling effect.

[0021] In one possible implementation, the thickness of the first sub-waveguide along the first direction is less than 350 nanometers, and / or the thickness of the second sub-waveguide along the first direction is less than 250 nanometers. The thickness of the second sub-waveguide along the first direction varies within this limited range, which facilitates evanescent wave coupling, coupling light from the first sub-waveguide into the second sub-waveguide and reducing coupling losses.

[0022] In one possible implementation, a support member is provided on the inner wall of the housing cavity, the laser is positioned on the surface of the support member, and the support member is used to support the laser. A metal layer and a solder layer are provided between the laser and the bottom wall of the housing cavity. A stable mechanical and electrical connection is formed between the metal layer and the solder layer. The bottom of the laser is fixedly connected to the solder layer through a welding process, thereby securing the laser within the housing cavity.

[0023] In a second aspect, the present application provides a communication device comprising any of the above-mentioned optoelectronic chips. The optoelectronic chip can be applied to a communication device to integrate multiple lasers with different luminous heights, thereby achieving faster and higher-capacity signal transmission. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] FIG1 is a schematic diagram of the structure of an optoelectronic chip provided in an embodiment of the present application;

[0025] FIG2 is a top view of FIG1 provided in this application;

[0026] FIG3 is a cross-sectional view taken along line AA in FIG1 ;

[0027] FIG4 is a cross-sectional view taken along line BB in FIG1 ;

[0028] FIG5 is a schematic diagram showing the positional relationship between the first sub-waveguide and the second sub-waveguide provided in an embodiment of the present application;

[0029] FIG6 is a cross-sectional view of an optoelectronic chip CC provided in another embodiment of the present application;

[0030] FIG7 is a schematic diagram of the positional relationship between the laser and the support member provided in an embodiment of the present application;

[0031] FIG8 is a schematic diagram of the positional relationship between the laser and the support member provided in an embodiment of the present application from another perspective;

[0032] FIG9 is a cross-sectional view of an optoelectronic chip along line BB provided in another embodiment of the present application;

[0033] FIG10 is a schematic diagram showing the positional relationship between the first sub-waveguide and the second sub-waveguide provided in an embodiment of the present application;

[0034] FIG11 is a schematic diagram showing the positional relationship between a first sub-waveguide and a second sub-waveguide provided in another embodiment of the present application;

[0035] FIG12 is a schematic diagram showing the positional relationship between the first sub-waveguide and the second sub-waveguide provided in another embodiment of the present application;

[0036] FIG13 is a schematic diagram showing the positional relationship between the first sub-waveguide and the second sub-waveguide provided in another embodiment of the present application;

[0037] FIG14 is a schematic diagram showing the positional relationship between the first sub-waveguide and the second sub-waveguide provided in another embodiment of the present application;

[0038] FIG15 is a schematic diagram showing the size relationship between the first sub-waveguide and the second sub-waveguide provided in another embodiment of the present application;

[0039] FIG16 is a top view of an optoelectronic chip provided in another embodiment of the present application;

[0040] FIG17 is a cross-sectional view of an optoelectronic chip at AA provided in another embodiment of the present application;

[0041] FIG18 is a cross-sectional view of an optoelectronic chip at position BB provided in another embodiment of the present application;

[0042] FIG19 is a schematic diagram showing the positional relationship among the first sub-waveguide, the second sub-waveguide, and the second waveguide provided in an embodiment of the present application;

[0043] FIG20 is a cross-sectional view of an optoelectronic chip at position BB provided in another embodiment of the present application;

[0044] FIG21 is a schematic diagram showing the positional relationship between a first sub-waveguide, a second sub-waveguide, and a second waveguide provided in another embodiment of the present application;

[0045] FIG22 is a schematic diagram showing the positional relationship between the first sub-waveguide, the second sub-waveguide, and the second waveguide provided in another embodiment of the present application;

[0046] FIG23 is a schematic diagram showing the positional relationship among the first sub-waveguide, the second sub-waveguide, and the second waveguide provided in another embodiment of the present application. DETAILED DESCRIPTION

[0047] The embodiments of the present application are described below in conjunction with the drawings in the embodiments of the present application.

[0048] For ease of understanding, the English abbreviations and related technical terms involved in the embodiments of this application are explained and described below.

[0049] It should be clear that the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0050] The terms used in the embodiments of the present application are for the purpose of describing specific embodiments only and are not intended to limit the present application. The singular forms "a", "an", "the" and "the" used in the embodiments of the present application and the appended claims are also intended to include plural forms unless the context clearly indicates otherwise.

[0051] It should be understood that the term "and / or" as used herein is simply a term used to describe the existence of three possible relationships between related objects. For example, "A and / or B" can represent the existence of A alone, the existence of both A and B, and the existence of B alone. Furthermore, the character " / " in this document generally indicates that the related objects are in an "or" relationship.

[0052] The word "if," as used herein, may be interpreted as "at the time of" or "when" or "in response to determining" or "in response to detecting," depending on the context. Similarly, the phrases "if it is determined" or "if (stated condition or event) is detected" may be interpreted as "when it is determined" or "in response to the determination" or "when detecting (stated condition or event)" or "in response to detecting (stated condition or event)," depending on the context.

[0053] It should be understood that the terms “first”, “second”, etc. used in this application are only used for the purpose of distinguishing descriptions, and cannot be understood as indicating or implying relative importance, nor can they be understood as indicating or implying an order.

[0054] In the description of this application, the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they should not be understood as limiting this application.

[0055] When used in this application, "within the range of...", unless it is specifically stated that the end value is not included, it is assumed that both end values ​​of the range are included. For example, in the range of 1 to 5, the two values ​​1 and 5 are included.

[0056] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "install", "connect" and "connect" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, a conflicting connection or an integrated connection. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0057] Heterogeneous integration of optoelectronic chips is a technology that integrates optoelectronic and microelectronic devices made of different materials. This technology can combine the advantages of different materials, achieve complementary strengths, and improve chip performance and functionality. In heterogeneous integration of optoelectronic chips, optoelectronic and microelectronic devices made of different materials can be integrated according to a specific structure and system design. For example, Group III-V semiconductor materials or optical amplifiers can be flip-chip bonded to a silicon-based optical chip. Heterogeneous integration of optoelectronic chips offers advantages such as high integration density, low cost, and low power consumption.

[0058] In the prior art, optoelectronic chips include a substrate, a laser, and an optical device. A certain area of ​​etching is performed on the substrate, and the laser is placed upside down in the etched area so that the light-emitting port on the side of the laser can be aligned with the waveguide on the side of the substrate for light transmission. When multiple different lasers are heterogeneously integrated on the substrate, different lasers have light-emitting ports at different heights. The etching depth of the substrate can only match lasers with one light-emitting height. The remaining lasers are difficult to align with the waveguide due to the misalignment of the light-emitting height, and the coupling loss with the waveguide on the substrate will increase to varying degrees. One solution is to etch the substrate multiple times, with each etching depth corresponding to a laser with a light-emitting height, so that alignment of lasers with different light-emitting heights and the waveguide can be achieved. However, the optoelectronic chip is small in size, and multiple etchings are prone to errors, which increases the error in the alignable height and reduces the alignment accuracy, thereby resulting in low coupling between lasers with different light-emitting heights and the waveguide on the substrate.

[0059] To address the issue of low coupling between lasers and waveguides at different emission heights on an optoelectronic chip, the present application provides an optoelectronic chip 10. Referring to Figures 1 to 3 , optoelectronic chip 10 includes a substrate 100, a laser 200, and an optical device 300. Substrate 100 comprises a two-layer structure of a silicon layer and a silicon dioxide layer. The silicon layer can serve as the base layer of substrate 100. Silicon dioxide can be formed on the silicon layer through deposition techniques, and the silicon dioxide can serve as an insulating layer or an optical waveguide layer.

[0060] The substrate 100 includes a light transmission portion 110 and a receiving cavity 120 adjacent to each other. Both the light transmission portion 110 and the receiving cavity 120 are formed in a silicon dioxide layer and can be formed by etching the substrate 100. The light transmission portion 110 can be made of silicon dioxide. A first waveguide 110a is disposed within the light transmission portion 110. Light emitted by the laser 200 can be transmitted through the first waveguide 110a and other portions of the light transmission portion 110 excluding the first waveguide 110a.

[0061] The light-transmitting portion 110 includes at least two sub-waveguides spaced apart along a first direction 410, where the first direction 410 corresponds to the Z direction in Figure 1 . The projections of any two adjacent sub-waveguides along the first direction 410 overlap, and the spacing between the two adjacent sub-waveguides is within a predetermined range. The waveguides can guide laser light propagation therethrough and can be made of silicon nitride.

[0062] The laser 200 is a device that generates optical signals. The laser 200 can convert electrical energy into optical energy and then emit light of a certain wavelength. The laser 200 is located in the receiving cavity 120 and is coupled to one of the sub-waveguides of the first waveguide 110a.

[0063] Optical device 300 is a device that receives and transmits optical signals, including but not limited to multiplexers, amplifiers, and filters. Laser 200, optical transmission unit 110, and optical device 300 are sequentially arranged, and optical device 300 is coupled to another sub-waveguide of first waveguide 110a.

[0064] Specifically, FIG2 is used as an example to explain in detail the optoelectronic chip 10 provided in an embodiment of the present application. Referring to FIG2 , FIG2 is a top view of the remaining structure of the optoelectronic chip 10 shown in FIG1 , excluding the light transmission portion 110. The laser 200, the light transmission portion 110, and the optical device 300 are arranged sequentially along the X-axis. The first waveguide 110a may include two sub-waveguides, namely a first sub-waveguide 111 and a second sub-waveguide 112. The first sub-waveguide 111 is coupled to the laser 200, and the second sub-waveguide 112 is coupled to the optical device 300. The first sub-waveguide 111 and the second sub-waveguide 112 are spaced apart in a first direction 410, with the first sub-waveguide 111 located above the second sub-waveguide 112. The spacing between adjacent first sub-waveguides 111 and second sub-waveguides 112 is within a preset range. The preset range here refers to the spacing range within which the first sub-waveguide 111 and the second sub-waveguide 112 can form evanescent wave coupling. Evanescent wave coupling refers to the phenomenon of laser energy transfer caused by interaction when laser light propagates through an interface or medium. After the first sub-waveguide 111 is coupled to the laser 200, the optical signal generated by the laser 200 propagates within the first sub-waveguide 111. In the area where the projections of the first sub-waveguide 111 and the second sub-waveguide 112 along the first direction 410 overlap, the propagation direction of the laser light changes, and the first sub-waveguide 111 is gradually coupled to the second sub-waveguide 112.

[0065] In one embodiment, there may be two lasers 200, namely a first laser 210 and a second laser 220. The lasers 200 are placed in the accommodating cavity 120, which can be manufactured by a process such as etching. The first laser 210 and the second laser 220 are both placed on the wall surface of the accommodating cavity 120 in the opposite Z direction. The emission height of the first laser 210 is higher than the emission height of the second laser 220. Referring to Figures 4 and 6, the emission height H1 of the emission port of the first laser 210 from the wall surface of the opposite Z direction of the first laser 210 is greater than the height H2 of the second sub-waveguide 112 from the wall surface of the opposite Z direction of the first laser 210. The light-emitting height of the light-emitting port of the second laser 220 from the wall surface on the Z opposite direction of the second laser 220 is the same as the height of the second waveguide 110b from the wall surface on the Z opposite direction of the second laser 220. The height of the second waveguide 110b from the wall surface on the Z opposite direction of the second laser 220 is the same as the height of the second sub-waveguide 112 from the wall surface on the Z opposite direction of the first laser 210. The light-emitting height of the first laser 210 is greater than the light-emitting height of the second laser 220.

[0066] The light transmission portion 110 is further provided with a second waveguide 110b. As shown in FIG2 , the second waveguide 110b has only one layer in the Z direction. Laser light emitted by the second laser 220 can be transmitted through the second waveguide 110b to the optical device 300 on the opposite side of the X direction. The two ends of the second waveguide 110b are coupled to the laser 200 and the optical device 300, respectively. The sub-waveguide in the first waveguide 110a that is coupled to the optical device 300 is the second sub-waveguide 112. The second sub-waveguide 112 and the second waveguide 110b are located in the same plane perpendicular to the first direction 410. The optical device 300 can receive light emitted by the first laser 210 and the second laser 220 at the same height.

[0067] In the optoelectronic chip 10 provided herein, the spacing between at least two sub-waveguides in the first waveguide 110a is within a preset range, enabling evanescent wave coupling. This allows the propagation direction of the optical signal to change during propagation, allowing the optical signal generated by the laser 200 to propagate from the waveguide coupled to the laser 200 to the waveguide coupled to the optical device 300. By providing the first waveguide 110a and utilizing a coupling design with multiple sub-waveguides, the laser position can be height-varied, achieving alignment between lasers 200 and the waveguide at different emission heights, improving coupling and reducing coupling loss.

[0068] In one possible embodiment, as shown in FIG3 , a first waveguide 110a includes a spacer 114. The spacer 114 is located between the overlapping regions of the projections of two adjacent sub-waveguides along a first direction 410 (aligned with the Z-direction). The refractive index of the sub-waveguides adjacent to the spacer 114 is greater than the refractive index of the spacer 114. The first waveguide 110a may include a first sub-waveguide 111 and a second sub-waveguide 112. The first sub-waveguide 111 and the second sub-waveguide 112 are spaced apart in the Z-direction. The portion separating the first sub-waveguide 111 and the second sub-waveguide 112 in the Z-direction is the spacer 114. The refractive index of the first sub-waveguide 111 and the second sub-waveguide 112 adjacent to the spacer 114 is greater than the refractive index of the spacer 114. The refractive indices of the first sub-waveguide 111 and the second sub-waveguide 112 may be the same or different. The refractive index is the ratio of the speed of light in a vacuum to its speed in a medium. It can be used to describe the speed and direction of light propagation in different media and reflects the degree of light deflection in the medium. When light enters from one medium into another, the propagation speed of the light changes due to the difference in the medium. The larger the refractive index, the stronger the medium's ability to refract light, and the light will change its propagation direction more rapidly after entering the medium. The refractive index of the first sub-waveguide 111 and the second sub-waveguide 112 is greater than the refractive index of the spacer 114, which enables evanescent wave coupling of the laser light in the spacer 114 and the region where the projections of the first sub-waveguide 111 and the second sub-waveguide 112 overlap along the Z direction, thereby propagating the laser light from the first sub-waveguide 111 to the second sub-waveguide 112.

[0069] In one possible embodiment, as shown in FIG4 , the spacer 114 has a length L1 along a first direction 410 (the Z direction in FIG4 ). The length L1 specifically refers to the vertical distance from the bottom side of the first sub-waveguide 111 to the top side of the second sub-waveguide 112 in the first direction 410. The length L1 of the spacer 114 along the first direction 410 is less than 250 nanometers. This length L1 ensures that evanescent wave coupling occurs in the region where the spacer 114 and the projections of the first and second sub-waveguides 111 and 112 overlap in the Z direction. The first sub-waveguide 111 couples the laser light into the second sub-waveguide 112, causing the laser light to propagate in the direction indicated by the dashed arrow in FIG4 .

[0070] In one possible embodiment, the material of the spacer 114 is the same as the material of the outer portion of the first waveguide 110a in the light transmission portion 110. The light transmission portion 110 can be made of silicon dioxide, and the outer portion of the first waveguide 110a in the light transmission portion 110 can also be made of silicon dioxide. The material of the spacer 114 can be the same as the material of the outer portion of the first waveguide 110a in the light transmission portion 110, also made of silicon dioxide.

[0071] In one possible embodiment, the light transmission portion 110 is further provided with a second waveguide 110b, where both ends of the second waveguide 110b are coupled to the laser 200 and the optical device 300, respectively. There are at least two lasers 200. The first waveguide 110a includes a first sub-waveguide 111, where the first sub-waveguide 111 and the second waveguide 110b are coupled to different lasers 200, respectively. The sub-waveguide in the first waveguide 110a that is coupled to the optical device 300 is the second sub-waveguide 112, and the second sub-waveguide 112 and the second waveguide 110b are located in the same plane perpendicular to the first direction. For example, as shown in FIG2 , the number of lasers 200 can be two, and the emission heights of the two lasers 200 can be different. The laser with the lower emission height (i.e., the second laser 220) can be connected to the second waveguide 110b, and the laser with the higher emission height (i.e., the first laser 210) can be connected to the first waveguide 110a. The laser light is coupled to the same height as the output end of the second waveguide 110b through multiple sub-waveguides in the first waveguide 110a, so that lasers with different emission heights can be output from the waveguide at the same height and enter the optical device 300 at the same height. Furthermore, the lasers 200 of different heights can be placed in the same groove, and the groove can be formed in the optoelectronic chip 10 by etching at one time, thereby improving the accuracy of controlling the emission height of the lasers 200, achieving alignment between the lasers of different emission heights and the waveguide, improving coupling, reducing coupling loss, and improving the quality of the optoelectronic chip.

[0072] In one possible embodiment, a support member 510 is provided on the bottom wall of the accommodating cavity 120. The laser 200 is located on the surface of the support member 510. The support member 510 is used to support the laser 200. A metal layer 520 and a solder layer 530 are provided between the laser 200 and the bottom wall of the accommodating cavity 120. The support member 510 can be formed on the bottom wall of the accommodating cavity 120 by etching, and there is at least one support member 510. By way of example, the bottom wall of the accommodating cavity 120 can have four support members 510, and the support members 510 can be support columns.

[0073] Referring to Figures 7 and 8 , four support members 510 are provided on the bottom wall of the accommodating cavity 120. Figure 7 shows two support members 510, while the remaining two support members 510 are located to one side of the two support members 510 shown in the figure along the Y direction and have the same structure. The support members 510 can be formed by etching the substrate. The laser 200 is located on the surface of the support members 510, and the four support members 510 are used to better support the laser 200. A metal layer 520 can be formed between the laser 200 and the bottom wall of the accommodating cavity 120 by a combination of one or more methods such as evaporation, electroless plating, and sputtering deposition. A solder layer 530 is provided on one side of the metal layer 520 along the first direction 410, forming a stable mechanical and electrical connection between the metal layer 520 and the solder layer 530. In the X direction, neither the metal layer 520 nor the solder layer 530 contacts the support members 510. The bottom of the laser 200 is fixedly connected to the solder layer 530 through a welding process, and thus the laser 200 is fixed in the accommodating cavity 120 .

[0074] In some possible implementations, as shown in FIG4 , the first waveguide 110a includes a first sub-waveguide 111 and a second sub-waveguide 112, wherein the first sub-waveguide 111 and the second sub-waveguide 112 are sub-waveguides of different heights along the Z direction, and can be formed by depositing silicon nitride (SiN) channels of different heights in the substrate 100. The first sub-waveguide 111 and the second sub-waveguide 112 can be two adjacent sub-waveguides in the Z direction, or they can be non-adjacent, with other waveguides between the first sub-waveguide 111 and the second sub-waveguide 112 for transition, as described below. This embodiment takes the example of the first sub-waveguide 111 and the second sub-waveguide 112 being directly adjacent to each other as shown in FIG4 . It should be noted that the waveguides described in this application as being adjacent refer to the absence of other waveguides between the two adjacent sub-waveguides, and that the laser light transmitted by the two adjacent sub-waveguides will only pass through the two adjacent sub-waveguides and not through other waveguides when implementing evanescent wave coupling transmission.

[0075] At least two sub-waveguides in the first waveguide 110a are stacked and spaced apart along the first direction 410, one of which may be the first sub-waveguide 111, and the other may be the second sub-waveguide 112. The first sub-waveguide 111 may be the outermost waveguide of all waveguides in the first waveguide 110a along the Z direction, and the second sub-waveguide 112 may be the outermost waveguide of all waveguides in the first waveguide 110a along the opposite Z direction. In one embodiment, the positions of the first sub-waveguide 111 and the second sub-waveguide 112 may be swapped, such that the first sub-waveguide 111 may be the outermost waveguide of all waveguides in the first waveguide 110a along the opposite Z direction, and the second sub-waveguide 112 may be the outermost waveguide of all waveguides in the first waveguide 110a along the Z direction. This embodiment takes the structure shown in FIG. 4 as an example.

[0076] The first sub-waveguide 111 is coupled to the laser 200. The laser 200 can be located on one side of the light transmission portion 110 in the X direction. One end of the first sub-waveguide 111 in the X direction extends to the accommodating cavity 120 to couple with the light output port of the laser 200. In one embodiment, a portion of the substrate 100 can be separated from the accommodating cavity 120 by one end of the first sub-waveguide 111 in the X direction. In other words, a portion of the light transmission portion 110 can be separated from the accommodating cavity 120 by one end of the first sub-waveguide 111 in the X direction. This portion of the substrate 100 (i.e., the light transmission portion 110) can be made of silica. The height of the first sub-waveguide 111 in the X direction is the same as the height of the light output port of the laser 200 in the Z direction, allowing laser light emitted by the laser 200 to enter the first sub-waveguide 111.

[0077] The second sub-waveguide 112 can be located to one side of the first sub-waveguide 111 along the anti-Z direction. The projections of a portion of the second sub-waveguide 112 and the first sub-waveguide 111 along the first direction 410 (the anti-Z direction in FIG. 4 ) overlap, forming an evanescent wave coupling structure. Partial projections of one end of the second sub-waveguide 112 in the X direction overlap with partial projections of one end of the first sub-waveguide 111 in the anti-X direction along the first direction 410. The anti-X direction end of the second sub-waveguide 112 extends to the anti-X direction end of the light-transmitting portion 110 to couple with the light inlet of the optical device 300.

[0078] In one embodiment, as shown in FIG4 , the distance between one end of the second sub-waveguide 112 in the X-direction and the first laser 210 is equal to the distance between one end of the first sub-waveguide 111 in the X-direction and the first laser 210. The projections of the second sub-waveguide 112 and the first sub-waveguide 111 in the first direction 410 can be shown in FIG5 , where the projections of one end of the second sub-waveguide 112 in the X-direction and the projections of one end of the first sub-waveguide 111 in the X-direction along the first direction 410 overlap. The refractive indices of the first and second sub-waveguides 111 and 112 adjacent to the spacer 114 are both greater than those of the spacer 114. The first sub-waveguide 111 couples laser light into the second sub-waveguide 112, and the laser light is transmitted in the direction indicated by the dashed arrow in FIG4 . It should be understood that FIG5 only illustrates one positional relationship between the first and second sub-waveguides 111 and 112. The projections of the first and second sub-waveguides 111 and 112 in the first direction may also exist in other situations, and FIG5 is only one example.

[0079] In one embodiment, referring to FIG9 , the distance between one end of the second sub-waveguide 112 in the X-direction and the first laser 210 is not equal to the distance between one end of the first sub-waveguide 111 in the X-direction and the first laser 210. Compared to the second sub-waveguide 112, the first sub-waveguide 111 is closer to the first laser 210 at one end in the X-direction. The projections of the second sub-waveguide 112 and the first sub-waveguide 111 in the first direction 410 can be shown in FIG10 to FIG14 . The projections of the second sub-waveguide 112 and the first sub-waveguide 111 in the X-direction do not overlap along the first direction 410. The refractive indexes of the first sub-waveguide 111 and the second sub-waveguide 112 adjacent to the spacer 114 are both greater than that of the spacer 114. The first sub-waveguide 111 couples laser light into the second sub-waveguide 112, and the laser light is transmitted in the direction indicated by the dashed arrow in FIG4 .

[0080] In one possible implementation, the first waveguide 110a includes at least two sub-waveguides sequentially arranged along a first direction 410. The projections of any two adjacent sub-waveguides along the first direction 410 partially overlap, and the adjacent sub-waveguides contact each other. For example, the first waveguide 110a includes a first sub-waveguide 111 and a second sub-waveguide 112. The first sub-waveguide 111 and the second sub-waveguide 112 are arranged along the first direction 410. The first sub-waveguide 111 and the second sub-waveguide 112 may be in direct contact, and the first sub-waveguide 111 is located on one side of the second sub-waveguide 112 along the first direction 410.

[0081] In one possible implementation, in at least some adjacent sub-waveguides, the refractive index of the sub-waveguide closer to the optical device 300 is greater than or equal to the refractive index of the sub-waveguide closer to the laser 200. As shown in FIG4 , the refractive index of the second sub-waveguide 112 closer to the optical device 300 is greater than or equal to the refractive index of the first sub-waveguide 111 closer to the laser 200, thereby facilitating the transmission of light from the first sub-waveguide 111 to the second sub-waveguide 112.

[0082] In some possible implementations, referring to FIG5 and FIG10 to FIG14 , schematic top views of two adjacent sub-waveguides in a first waveguide include but are not limited to those shown in FIG5 and FIG10 to FIG14 . Among them, one of the at least two sub-waveguides is a first sub-waveguide 111, and the other is a second sub-waveguide 112. The first sub-waveguide 111 is coupled to a laser, and the second sub-waveguide 112 is coupled to an optical device.

[0083] In one embodiment, as shown in FIG5 , the first sub-waveguide 111 and the second sub-waveguide 112 partially overlap along a first direction 410, with the projection of the first sub-waveguide 111 on one side in the X-direction coinciding with the projection of the second sub-waveguide 112 on one side in the X-direction. Part of the second sub-waveguide 112 in FIG5 is obscured by the first sub-waveguide 111, and the obscured portion is the overlapping portion of the first sub-waveguide 111 and the second sub-waveguide 112. The first sub-waveguide 111 includes a first variable region 111a. The width of the first variable region 111a along a second direction 420 (corresponding to the Y-direction in FIG5 ) gradually decreases from the direction from the laser to the optical device (corresponding to the anti-X-direction), resulting in a tapered shape at one end of the first sub-waveguide 111 in the anti-X-direction. At least a portion of the first variable region 111a overlaps with the second sub-waveguide 112 on the other side. The term "gradually decrease" refers to the fact that the width of the first changing region 111a along the second direction 420 changes according to a certain pattern from the laser to the optical device. This can be a linear decrease at a fixed ratio, or a decrease in the form of a corresponding curve according to a certain equation. When the laser light transmitted by the first sub-waveguide 111 reaches the end of the first sub-waveguide 111 in the opposite direction of the X direction, it is transmitted to the second sub-waveguide 112 through the formed evanescent wave coupling structure. The tapered structure of the first sub-waveguide 111 at the end in the opposite direction of the X direction can improve the coupling efficiency of the laser light transmitted from the first sub-waveguide 111 to the second sub-waveguide 112.

[0084] The second sub-waveguide 112 includes a second variable region 112a. The width of the second variable region 112a along the second direction 420 (corresponding to the Y direction in FIG. 5 ) gradually increases from the direction from the laser to the optical device (which corresponds to the direction opposite to the X direction), resulting in a tapered shape at one end of the second sub-waveguide 112 in the X direction. At least a portion of the second variable region 112a overlaps with the first sub-waveguide 111 on the other side. The term "gradually increasing" refers to the width of the second variable region 112a along the second direction 420 changing according to a certain pattern from the direction from the laser to the optical device. This can be a linear increase at a fixed ratio or a curve increase according to a certain equation. When the laser light transmitted by the first sub-waveguide 111 reaches the end of the first sub-waveguide 111 in the direction opposite to the X direction, it is transmitted to the second sub-waveguide 112 via the evanescent wave coupling structure formed. The tapered structure of the second sub-waveguide 112 at the X direction end improves the coupling efficiency of the laser light from the first sub-waveguide 111 to the second sub-waveguide 112.

[0085] In one embodiment, as shown in FIG10 , the first sub-waveguide 111 includes a first variable region 111a, which tapers toward one end in the opposite direction of the X axis. The second sub-waveguide 112 includes a second variable region 112a, which tapers toward one end in the X axis. At least a portion of the first variable region 111a overlaps with the second sub-waveguide 112 on the other side. In the first direction 410, the projection of the first variable region 111a overlaps with the projection of the second variable region 112a, and the projection of the first variable region 111a is completely within the projection of the second variable region 112a. The lengths of the first and second variable regions 111a and 112a in the X axis are equal. The projection of the first sub-waveguide 111 on one side in the X axis does not overlap with the projection of the second sub-waveguide 112 on the other side in the X axis.

[0086] In one embodiment, as shown in FIG11 , the first sub-waveguide 111 includes a first variable region 111a, which tapers toward one end in the opposite direction of the X axis. The second sub-waveguide 112 includes a second variable region 112a, which tapers toward one end in the X axis. At least a portion of the first variable region 111a overlaps with the second sub-waveguide 112 on the other side. In the first direction 410, the projection of the first variable region 111a overlaps with the projection of the second variable region 112a, and the projection of the first variable region 111a is completely within the projection of the second variable region 112a.

[0087] In one embodiment, as shown in FIG12 , the first sub-waveguide 111 includes a first variable region 111a, which tapers toward one end in the opposite direction of the X axis. The second sub-waveguide 112 includes a second variable region 112a, which tapers toward one end in the X axis. At least a portion of the first variable region 111a overlaps with the second sub-waveguide 112 on the other side. In the first direction 410, the projection of the first variable region 111a overlaps with the projection of the second variable region 112a, with the projection of the first variable region 111a partially located within the projection of the second variable region 112a. The projection of the first variable region 111a on the side closest to the X axis lies outside the projection of the second variable region 112a.

[0088] In one embodiment, as shown in FIG13 , the first sub-waveguide 111 includes a first variable region 111a, which tapers toward one end in the opposite direction of the X axis. The second sub-waveguide 112 includes a second variable region 112a, which tapers toward one end in the X axis. At least a portion of the first variable region 111a overlaps with the second sub-waveguide 112 on the other side. In the first direction 410, the projection of the first variable region 111a overlaps with the projection of the second variable region 112a, with the projection of the first variable region 111a partially located within the projection of the second variable region 112a. The projection of the first variable region 111a on the side closest to the optical device is located outside the projection of the second variable region 112a.

[0089] In one embodiment, as shown in FIG14 , the first sub-waveguide 111 includes a first changing region 111a, which tapers toward one end in the opposite direction of the X axis. The second sub-waveguide 112 includes a second changing region 112a, which tapers toward one end in the X axis. At least a portion of the first changing region 111a overlaps with the second sub-waveguide 112 on the other side. In the first direction 410, the projection of the first changing region 111a overlaps with the projection of the second changing region 112a, completely within the projection of the second changing region 112a. The projection of the first sub-waveguide 111, excluding the first changing region 111a, in the first direction 410 does not overlap with the projection of the second sub-waveguide 112.

[0090] In one embodiment, referring to FIG. 5 and FIG. 10 to FIG. 14 , the width of the first change region 111 a along the second direction 420 decreases from a first width W1 to a second width W2 , the first width W1 is in a range of 0.7 μm to 0.9 μm, and the second width W2 is in a range of 0.1 μm to 0.2 μm.

[0091] In one embodiment, referring to FIG. 5 and FIG. 10 to FIG. 14 , the width of the second change region 112 a along the second direction 420 increases from a third width W3 to a fourth width W4, the third width W3 is in a range of 1.1 μm to 1.3 μm, and the fourth width W4 is in a range of 1.2 μm to 2 μm.

[0092] In one embodiment, referring to Figures 5 and 10 to 14 , in the overlapping portion of the projections, the projections of the first changing region 111a and the second changing region 112a along the first direction at least partially overlap, and the length L2 of the overlapping portion is less than 250 microns. The length of the waveguide refers to the length of the waveguide along the direction of light transmission, such as the length in the X direction in Figure 10 .

[0093] In some possible implementations, as shown in FIG3 , the first sub-waveguide 111 and the second sub-waveguide 112 may have a square cross-sectional shape along the YZ plane. In one embodiment, the thickness of the first sub-waveguide 111 along the first direction 410 (the Z direction in FIG3 ) may be less than 350 nanometers. In another embodiment, the thickness of the second sub-waveguide 112 along the first direction 410 (the Z direction in FIG3 ) may be less than 250 nanometers.

[0094] In one possible embodiment, as shown in FIG15 , the first sub-waveguide 111 and the second sub-waveguide 112 may have a square cross-sectional shape along the YZ plane, and the length of the cross-sectional area of ​​the first sub-waveguide 111 along the Y direction is greater than the length of the cross-sectional area of ​​the second sub-waveguide 112 along the Y direction. This application does not impose any restrictions on the size relationship between any sub-waveguides in the first waveguide 110 a. The cross-sectional areas of any sub-waveguides in the first waveguide 110 a may be equal (as shown in FIG3 ) or unequal (as shown in FIG15 ).

[0095] In some possible embodiments, referring to Figures 16, 17, 18 and 20, the optoelectronic chip has three lasers, namely a first laser 210, a second laser 220 and a third laser 230. The emission heights of the three lasers are different, among which the emission height of the second laser 220 is the lowest and the emission height of the third laser 230 is the highest. The emission height of the first laser 210 is between the second laser 220 and the third laser 230.

[0096] In one embodiment, the second laser 220 can be coupled to the second waveguide 110b, which has only one layer in the Z direction. The laser light emitted by the second laser 220 can be transmitted through the second waveguide 110b to the optical device 300 on the side opposite to the X direction. The first laser 210 can be coupled to one of the first waveguides 110a, wherein the first waveguide 110a coupled to the first laser 210 is composed of two layers of stacked and spaced sub-waveguides. The laser light emitted by the first laser 210 can be transmitted through the first sub-waveguide 111 in the set of first waveguides 110a to the second sub-waveguide 112. The height of the second sub-waveguide 112 along the Z direction is the same as the height of the second waveguide 110b along the Z direction. The second sub-waveguide 112 and the second waveguide 110b are located in the same plane perpendicular to the first direction 410. The optical device 300 can receive the laser light emitted by the first laser 210 and the second laser 220 at the same height.

[0097] The third laser 230 has a high emission height. If laser transmission is also performed through the first waveguide composed of two layers of sub-waveguides, the gap between the two layers of waveguides will increase, resulting in low coupling efficiency. In this embodiment, the third laser can be coupled to the first waveguide 110a. The first waveguide 110a coupled to the third laser 230 can be composed of three layers of stacked and spaced sub-waveguides, including a first sub-waveguide 111, a transition waveguide 113, and a second sub-waveguide 112 stacked and spaced sequentially along a first direction 410. The first sub-waveguide 111 and the transition waveguide 113 are adjacent to each other, and their projections along the first direction 410 (aligned with the Z direction) overlap, forming an evanescent wave coupling structure. The transition waveguide 113 and the second sub-waveguide 112 are adjacent to each other, and their projections along the first direction 410 (aligned with the Z direction) overlap, forming an evanescent wave coupling structure. The laser light emitted by the third laser 230 can be coupled by the first sub-waveguide 111 into the transition waveguide 113. The laser light in the transition waveguide 113 can be coupled into the second sub-waveguide 112. The laser light emitted by the third laser 230 can be transmitted along the path indicated by the dashed arrow in FIG18 . The height of the second sub-waveguide 112 in the Z direction can be the same as the height of the second waveguide 110 b in the Z direction. The second sub-waveguide 112 and the second waveguide 110 b are located in the same plane perpendicular to the first direction 410. The optical device 300 can receive the laser light emitted by the first laser 210, the second laser 220, and the third laser 230 at the same height.

[0098] In one embodiment, as shown in Figures 18 and 19 , the first sub-waveguide 111, the second sub-waveguide 112, and the transition waveguide 113 are all spaced equidistant from the first laser 210 at one end in the X-direction. The projections of the first sub-waveguide 111, the second sub-waveguide 112, and the transition waveguide 113 along the first direction 410 can be shown in Figure 19 , where the projections of the first sub-waveguide 111, the second sub-waveguide 112, and the transition waveguide 113 along the first direction 410 at one end in the X-direction overlap. The refractive indexes of the first sub-waveguide 111, the second sub-waveguide 112, and the transition waveguide 113 adjacent to the spacer 114 are all greater than that of the spacer 114. The first sub-waveguide 111 couples laser light into the transition waveguide 113, which then couples it from the transition waveguide 113 to the second sub-waveguide 112. The laser light is transmitted in the direction indicated by the dashed arrow in Figure 18 . It can be understood that Figure 19 only shows one positional relationship among the first sub-waveguide 111, the transition waveguide 113 and the second sub-waveguide 112. The projections of the first sub-waveguide 111, the transition waveguide 113 and the second sub-waveguide 112 in the first direction may also have other situations, and Figure 19 is only one example.

[0099] In one embodiment, as shown in FIG20 , the first sub-waveguide 111, the second sub-waveguide 112, and the transition waveguide 113 are unequally spaced from the first laser 210 at one end in the X-direction. Compared to the second sub-waveguide 112 and the transition waveguide 113, the first sub-waveguide 111 is closer to the laser 200 at one end in the X-direction. The first sub-waveguide 111, the transition waveguide 113, and the second sub-waveguide 112 may be arranged in a stepped pattern at one end in the X-direction. The projections of the first sub-waveguide 111, the second sub-waveguide 112, and the transition waveguide 113 in the first direction 410 may be as shown in FIG21 to FIG23 , where the projections of the first sub-waveguide 111, the second sub-waveguide 112, and the transition waveguide 113 at one end in the X-direction overlap. The refractive indexes of the first sub-waveguide 111, the second sub-waveguide 112, and the transition waveguide 113 adjacent to the spacer 114 are all greater than the refractive index of the spacer 114. The first sub-waveguide 111 couples the laser light into the transition waveguide 113, and then couples the laser light from the transition waveguide 113 to the second sub-waveguide 112. The laser light is transmitted in the direction indicated by the dotted arrow in FIG. 20 .

[0100] In one embodiment, the first sub-waveguide 111 and the transition waveguide 113 are in contact with each other; a spacer 114 is provided between the transition waveguide 113 and the second sub-waveguide 112, and a length L1 of the spacer 114 along the first direction 410 is less than 250 nanometers. The transition waveguide 113 and the second sub-waveguide 112 are not in contact with each other.

[0101] In one embodiment, a spacer 114 is provided between the first sub-waveguide 111 and the transition waveguide 113 , and a length L1 of the spacer 114 along the first direction 410 is less than 250 nanometers, that is, the first sub-waveguide 111 and the transition waveguide 113 are not in contact with each other; the transition waveguide 113 and the second sub-waveguide 112 are in contact with each other.

[0102] In one embodiment, the first sub-waveguide 111 and the transition waveguide 113 are in contact with each other, and the transition waveguide 113 and the second sub-waveguide 112 are also in contact with each other.

[0103] In one embodiment, if there is a laser with a higher emission height, the transition waveguide 113 can also be formed by multiple layers of sub-waveguides arranged at intervals, and the sub-waveguide adjacent to the first sub-waveguide 111 in the transition waveguide 113 partially overlaps with the first sub-waveguide 111 along the first direction, the sub-waveguide adjacent to the second sub-waveguide 112 in the transition waveguide 113 partially overlaps with the second sub-waveguide 112 along the first direction, and any two adjacent sub-waveguides in the transition waveguide 113 at least partially overlap along the first direction.

[0104] In some possible implementations, referring to FIG. 19 and FIG. 21 to FIG. 23 , the schematic top views of the first waveguide include but are not limited to those shown in FIG. 19 and FIG. 21 to FIG. 23 .

[0105] In one embodiment, as shown in FIG19 , the first sub-waveguide 111 and the transition waveguide 113 partially overlap along the first direction, while the second sub-waveguide 112 and the transition waveguide 113 partially overlap along the first direction. The first sub-waveguide 111 includes a first variable region 111a. The width of the first variable region 111a along the second direction 420 (corresponding to the Y direction in FIG19 ) gradually decreases from the direction from the laser to the optical device (which corresponds to the anti-X direction), resulting in a tapered shape at one end of the first sub-waveguide 111 in the anti-X direction. At least a portion of the first variable region 111a overlaps with the second sub-waveguide 112 on the other side. When laser light transmitted from the first sub-waveguide 111 reaches the anti-X direction end of the first sub-waveguide 111, it is transmitted to the transition waveguide 113 via the formed evanescent wave coupling structure. The tapered structure at the anti-X direction end of the first sub-waveguide 111 improves the coupling efficiency of the laser light from the first sub-waveguide 111 to the transition waveguide 113.

[0106] In one embodiment, the second sub-waveguide 112 includes a second variable region 112a. The width of the second variable region 112a along the second direction 420 (corresponding to the Y direction in FIG. 19 ) gradually increases from the direction from the laser to the optical device (which corresponds to the opposite X direction), such that the second sub-waveguide 112 gradually tapers at one end in the X direction. At least a portion of the second variable region 112a overlaps with the first sub-waveguide 111 on the other side. When the laser light transmitted by the first sub-waveguide 111 is transmitted to the X-direction end of the second sub-waveguide 112, the evanescent wave coupling structure formed receives the laser light transmitted by the first sub-waveguide 111. The tapered structure of the second sub-waveguide 112 at the X-direction end can improve the coupling efficiency of the laser light transmitted from the first sub-waveguide 111 to the second sub-waveguide 112.

[0107] In one embodiment, the transition waveguide 113 includes a third variable region 113a. The portion of the transition waveguide 113 that overlaps with the second sub-waveguide 112 has the third variable region 113a. Similar to the first variable region 111a, the width of the third variable region 113a along the second direction 420 (corresponding to the Y direction in FIG. 19 ) gradually decreases from the direction from the laser to the optical device (which corresponds to the anti-X direction), such that the transition waveguide 113 gradually tapers at one end in the anti-X direction. At least a portion of the third variable region 113a overlaps with the second sub-waveguide 112 on the other side. When laser light transmitted from the transition waveguide 113 reaches the anti-X direction end of the transition waveguide 113, it is transmitted to the second sub-waveguide 112 via the formed evanescent wave coupling structure. The tapered structure of the transition waveguide 113 at the anti-X direction end improves the coupling efficiency of the laser light from the transition waveguide 113 to the second sub-waveguide 112.

[0108] In one embodiment, as shown in FIG. 21 , the first sub-waveguide 111 includes a first changing region 111a, which tapers toward one end in the opposite direction of the X-axis. The second sub-waveguide 112 includes a second changing region 112a, which tapers toward one end in the X-axis. The transition waveguide 113 includes a third changing region 113a, which tapers toward one end in the opposite direction of the X-axis. At least portions of the third changing region 113a overlap with the first sub-waveguide 111 and the second sub-waveguide 112 on either side. In the first direction 410, the projection of the first changing region 111a partially overlaps with the projection of the second changing region 112a. The projections of the first sub-waveguide 111, the second sub-waveguide 112, and the transition waveguide 113 on one side in the X-axis do not overlap.

[0109] In one embodiment, as shown in FIG. 22 , the transition waveguide 113 may also be tapered at one end in the X direction. The transition waveguide 113 has a third changing region 113 a. The width of the transition waveguide 113 at one end in the X direction along the second direction 420 gradually increases in the direction from the laser to the optical device (which direction is consistent with the opposite X direction), and the gradually increasing region partially overlaps with the adjacent first sub-waveguide 111 along the first direction. When the laser light transmitted by the first sub-waveguide 111 is transmitted to the X-direction end of the transition waveguide 113, it is transmitted to the transition waveguide 113 through the formed evanescent wave coupling structure. The tapered structure of the transition waveguide 113 at one end in the X direction can improve the coupling efficiency of the laser light transmitted from the first sub-waveguide 111 to the transition waveguide 113. In addition, the area in the third changing region 113a that gradually increases in the direction from the laser to the optical device partially overlaps with the adjacent second sub-waveguide 112 along the first direction. When the laser light transmitted by the transition waveguide 113 is transmitted to one end of the second sub-waveguide 112 in the X direction, it is transmitted to the second sub-waveguide 112 through the formed evanescent wave coupling structure. The tapered structure of the transition waveguide 113 at one end in the X direction can improve the coupling efficiency of the laser light transmitted from the transition waveguide 113 to the second sub-waveguide 112.

[0110] In one embodiment, as shown in FIG. 23 , the transition waveguide 113 may have a tapered shape at one end in both the X-direction and the anti-X-direction. The portion of the transition waveguide 113 that overlaps with the first sub-waveguide 111 has a third variation region 113 a. The width of the transition waveguide 113 at one end in the X-direction gradually increases along the second direction 420 from the laser to the optical device (which direction coincides with the anti-X-direction), and the gradually increasing region partially overlaps with the adjacent first sub-waveguide 111 along the first direction. When the laser light transmitted by the first sub-waveguide 111 reaches the X-direction end of the transition waveguide 113, it is transmitted to the transition waveguide 113 through the formed evanescent wave coupling structure. The tapered structure of the transition waveguide 113 at one end in the X-direction can improve the coupling efficiency of the laser light transmitted from the first sub-waveguide 111 to the transition waveguide 113.

[0111] The portion of the transition waveguide 113 that overlaps with the second sub-waveguide 112 also has a third variable region 113a. The width of the third variable region 113a at one end in the opposite X direction, along the second direction 420, gradually decreases in the direction from the laser to the optical device (which coincides with the opposite X direction). Furthermore, this gradually decreasing region partially overlaps with the adjacent second sub-waveguide 112 along the first direction. When the laser light transmitted by the transition waveguide 113 reaches the X-direction end of the second sub-waveguide 112, it is transmitted to the second sub-waveguide 112 via the formed evanescent wave coupling structure. The tapered structure of the transition waveguide 113 at the X-direction end improves the coupling efficiency of the laser light transmitted from the transition waveguide 113 to the second sub-waveguide 112.

[0112] In one embodiment, referring to FIG. 19 and FIG. 21 to FIG. 23 , the first width W1 is in a range of 0.7 micrometers to 0.9 micrometers, and the second width W2 is in a range of 0.1 micrometers to 0.2 micrometers.

[0113] In one embodiment, referring to FIG. 19 and FIG. 21 to FIG. 23 , the third width W3 is in a range of 1.1 micrometers to 1.3 micrometers, and the fourth width W4 is in a range of 1.2 micrometers to 2 micrometers.

[0114] In one embodiment, referring to FIG. 19 and FIG. 21 to FIG. 23 , the fifth width W5 is in a range of 0.1 micrometers to 1.1 micrometers, and the sixth width W6 is in a range of 0.1 micrometers to 1.2 micrometers.

[0115] In one embodiment, as shown in FIG21 , in the portion where the projections overlap, the length L2a of the overlapping width variation region between adjacent first sub-waveguides 111 and transition waveguides 113 can be less than 250 microns. In another embodiment, in the portion where the projections overlap, the length L2b of the overlapping width variation region between adjacent second sub-waveguides 112 and transition waveguides 113 can be less than 250 microns. The waveguide length refers to the length of the waveguide along the light transmission direction, such as the length in the X direction in FIG21 .

[0116] In one embodiment, as shown in FIG22 , in the overlapping portion of the projections, the length L2a of the overlapping width variation region between adjacent first sub-waveguides 111 and transition waveguides 113 can be less than 250 microns. In another embodiment, in the overlapping portion of the projections, the length L2b of the overlapping width variation region between adjacent second sub-waveguides 112 and transition waveguides 113 can be less than 250 microns. The waveguide length refers to the length of the waveguide along the light transmission direction, such as the length in the X direction in FIG22 .

[0117] In one embodiment, as shown in FIG23 , in the portion where their projections overlap, the length L2a of the overlapping width variation region between adjacent first sub-waveguides 111 and transition waveguides 113 can be less than 250 microns. In another embodiment, in the portion where their projections overlap, the length L2b of the overlapping width variation region between adjacent second sub-waveguides 112 and transition waveguides 113 can be less than 250 microns. The waveguide length refers to the length of the waveguide along the light transmission direction, such as the length in the X direction in FIG23 .

[0118] The present application also provides a communication device, including the optoelectronic chip described in any of the above embodiments. The optoelectronic chip can be applied to various types of communication equipment. For example, the communication equipment can be a passive optical network (PON), a telecommunications room, a data center, a router, a switch, and a server. Of course, the optoelectronic chip can also be applied to other types of communication equipment, which is not limited here. The communication equipment may also include other components in addition to the optoelectronic chip, such as a processor and a memory. By applying the optoelectronic chip to the communication equipment, a variety of lasers with different light emission heights can be integrated to achieve faster and higher capacity signal transmission.

[0119] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the various embodiments of the present application, and should all be included in the scope of protection of the present application.

Claims

1. An optoelectronic chip, characterized in that, Comprising: A substrate having an adjacent optical conduction portion and a receiving cavity. A first waveguide is disposed in the optical conduction portion. The first waveguide includes at least two sub-waveguides spaced along a first direction. Any two adjacent sub-waveguides among the at least two sub-waveguides partially overlap in the projection along the first direction, and the interval between the two adjacent sub-waveguides is within a preset range; A laser located in the receiving cavity, and one of the sub-waveguides in the laser and the first waveguide is coupled; An optical device, the laser, the optical conduction portion, and the optical device are arranged in sequence, and the optical device is coupled to the other sub-waveguide of the first waveguide.

2. The optoelectronic chip according to claim 1, wherein The first waveguide includes a spacer portion located between the overlapping regions of the projections of two adjacent sub-waveguides along the first direction. The refractive indices of the sub-waveguides on both sides adjacent to the spacer portion are greater than the refractive index of the spacer portion.

3. The optoelectronic chip according to claim 2, characterized in that, The length of the spacer portion along the first direction is less than 250 nanometers.

4. The optoelectronic chip according to claim 2 or 3, characterized in that The material of the spacer portion is the same as the material of the outer peripheral portion of the first waveguide in the optical conduction portion.

5. The optoelectronic chip according to any one of claims 1-4, characterized in that, The optical conduction portion is further provided with a second waveguide. The two ends of the second waveguide are respectively coupled to the laser and the optical device. The number of lasers is at least two. The first waveguide includes a first sub-waveguide, and the first sub-waveguide and the second waveguide are respectively coupled to different lasers; The sub-waveguide in the first waveguide that is coupled to the optical device is a second sub-waveguide, and the second sub-waveguide and the second waveguide are in the same plane perpendicular to the first direction.

6. The optoelectronic chip according to any one of claims 1-5, characterized in that, The first waveguide includes at least two sub-waveguides arranged in sequence along a first direction. Any two adjacent sub-waveguides among the at least two sub-waveguides partially overlap in the projection along the first direction, and the two adjacent sub-waveguides are in contact with each other.

7. The optoelectronic chip according to any one of claims 6, wherein In at least a part of the two adjacent sub-waveguides, the refractive index of the sub-waveguide closer to the optical device side is greater than or equal to the refractive index of the sub-waveguide closer to the laser side.

8. The optoelectronic chip according to any one of claims 1-7, characterized in that, The at least two sub-waveguides are respectively a first sub-waveguide, a second sub-waveguide, and a transition waveguide. The first sub-waveguide, the transition waveguide, and the second sub-waveguide are stacked and spaced along the first direction. The first sub-waveguide is coupled to the laser, and the second sub-waveguide is coupled to the optical device; The projection of the transition waveguide and the first sub-waveguide along the first direction partially overlaps, and the projection of the transition waveguide and the second sub-waveguide along the first direction partially overlaps.

9. The optoelectronic chip according to any one of claims 1-8, characterized in that, One of the at least two sub-waveguides is a first sub-waveguide, and the other is a second sub-waveguide. The first sub-waveguide is coupled to the laser, and the second sub-waveguide is coupled to the optical device; In the overlapping part of the projection, the first sub-waveguide includes a first variation region, and the width value of the first variation region along a second direction gradually decreases from the direction of the laser to the direction of the optical device, and / or, the second sub-waveguide includes a second variation region, and the width value of the second variation region along the second direction gradually increases from the direction of the laser to the direction of the optical device; the second direction is perpendicular to the first direction.

10. The optoelectronic chip according to claim 9, wherein, The width value of the first variable region along the second direction decreases from a first width to a second width, where the first width ranges from 0.7 micrometers to 0.9 micrometers and the second width ranges from 0.1 micrometers to 0.2 micrometers.

11. The optoelectronic chip according to claim 9 or 10, characterized in that, The width value of the second variable region along the second direction increases from a third width to a fourth width, where the third width ranges from 1.1 micrometers to 1.3 micrometers and the fourth width ranges from 1.2 micrometers to 2 micrometers.

12. The optoelectronic chip according to any one of claims 1-11, characterized in that, In the overlapping part of the projection portion, the projections of the first variable region and the second variable region along the first direction at least partially coincide, and the length of the overlapping part is less than 250 micrometers.

13. The optoelectronic chip according to any one of claims 1-12, characterized in that, The thickness value of the first sub-waveguide along the first direction is less than 350 nanometers, and / or the thickness value of the second sub-waveguide along the first direction is less than 250 nanometers.

14. A communication device, characterized in that, Comprising the optoelectronic chip according to any one of claims 1-13.

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